TW201313944A - Deposition systems including a precursor gas furnace within a reaction chamber, and related methods - Google Patents

Abstract

Deposition systems include a reaction chamber, a substrate support structure disposed within the chamber for supporting a substrate within the reaction chamber, and a gas input system for injecting one or more precursor gases into the reaction chamber. The gas input system includes at least one precursor gas furnace disposed at least partially within the reaction chamber. Methods of depositing materials include separately flowing a first precursor gas and a second precursor gas into a reaction chamber, flowing the first precursor gas through at least one precursor gas flow path extending through at least one precursor gas furnace disposed within the reaction chamber, and, after heating the first precursor gas within the at least one precursor gas furnace, mixing the first and second precursor gases within the reaction chamber over a substrate.

Description

Deposition system including a gas flooding furnace in a reaction chamber and related methods

SUMMARY OF THE INVENTION Embodiments of the invention generally relate to systems for depositing materials on substrates and methods of making and using such systems. More particularly, embodiments of the invention relate to hydride vapor phase epitaxy (HVPE) methods for depositing III-V semiconductor materials on substrates and methods of making and using such systems.

Chemical vapor deposition (CVD) is a chemical process for depositing solid materials on a substrate and is commonly used in the fabrication of semiconductor devices. In a chemical vapor deposition process, the substrate is exposed to one or more reagent gases that react, decompose, or react and decompose to deposit a solid material onto the surface of the substrate.

One particular type of CVD process is known in the industry as vapor phase epitaxy (VPE). In a VPE process, a substrate is exposed to one or more reagent vapors in a reaction chamber that reacts, decomposes, or reacts and decomposes to deposit a solid material onto the surface of the substrate. VPE processes are commonly used to deposit III-V semiconductor materials. When a reagent vapor in a VPE process contains hydride (or halide) vapor, the process can be referred to as a hydride vapor phase epitaxy (HVPE) process.

A HVPE process is used to form a III-V semiconductor material, such as gallium nitride (GaN). In such processes, the GaN epitaxial growth on the substrate is caused by a gas phase reaction between gallium chloride (GaCl) and ammonia (NH ₃ ), which is between about 500 ° C and about 1,100 ° C. The reaction is carried out in a reaction chamber at an elevated temperature. Available from standard NH ₃ NH ₃ gas supply source.

In some methods, GaCl vapor is provided by in situ formation of GaCl in the reaction chamber by a hydrogen chloride (HCl) gas (which may be supplied from a standard source of HCl gas) over heated liquid gallium (Ga). The liquid gallium can be heated to a temperature between about 750 ° C and about 850 ° C. GaCl and NH ₃ can be directed to (eg, above) the surface of a heated substrate (eg, a wafer of semiconductor material). A gas injection system for use in such systems and methods is disclosed in U.S. Patent No. 6,179,913 issued toSolomon et al.

In such systems, it may be necessary to open the reaction chamber to the atmosphere to supplement the source of liquid gallium. In addition, it is not possible to clean the reaction chamber in situ in such systems.

To solve these problems, methods and systems have been developed that utilize external sources of GaCl ₃ precursors (directly injected into the reaction chamber). Examples of such methods and systems are disclosed in, for example, U.S. Patent Application Publication No. US 2009/0223442 A1, the disclosure of which is incorporated herein by reference.

This Summary is provided to introduce a selection of concepts in a simplified form, which are further described in the detailed description of some example embodiments. The summary is not intended to identify key features or important features of the subject matter claimed, and is not intended to limit the scope of the claimed subject matter.

In some embodiments, the invention includes a deposition system comprising at least a substantially closed reaction chamber, a pedestal at least partially disposed within the reaction chamber and configured to support a substrate within the reaction chamber, and for one or more precursors A gas is injected into the gas input system in the reaction chamber. The reaction chamber may be defined by a top wall, a bottom wall, and at least one side wall. The gas input system includes at least one pre-discharge gas furnace disposed within the reaction chamber. At least one precursor gas flow path extension Extend through at least one precursor gas furnace.

In other embodiments, the invention includes a method of depositing a semiconductor material. These methods can be implemented using embodiments of deposition systems as set forth herein. For example, embodiments of the disclosure may include: flowing a Group III element precursor gas and a Group V element precursor gas separately into the reaction chamber, and flowing the Group III element precursor gas through at least one extension through at least one arrangement Driving the gas flow path before the gas furnace in the reaction chamber to heat the Group III element precursor gas, and heating the Group III element precursor gas in at least one precursor gas furnace in the reaction chamber, and then mixing the Group V in the reaction chamber above the substrate Element precursor gas and Group III element precursor gas. The substrate surface may be exposed to a mixture of a Group V element precursor gas and a Group III element precursor gas to form a III-V semiconductor material on the surface of the substrate.

The disclosure may be more completely understood by reference to the following detailed description of exemplary embodiments, which are illustrated in the accompanying drawings.

The illustrations presented herein are not intended to be an actual view of any particular system, component or device, but merely to illustrate an idealized representation of an embodiment of the invention.

As used herein, the term "III-V semiconductor material" means and includes at least one or one element (B, Al, Ga, In, and Ti) from Group IIIA of the periodic table and from the periodic table. Any semiconductor material composed of one or one element (N, P, As, Sb, and Bi) of the VA group. For example, III-V semiconductor materials include, but are not limited to, GaN, GaP, GaAs, InN, InP, InAs, AlN, AlP, AlAs, InGaN, InGaP, InGaNP Wait.

A modified gas injector for use in a method and system for injecting an external source of a GaCl ₃ precursor in a reaction chamber has been recently developed, for example, as disclosed in the aforementioned U.S. Patent Application Publication No. US 2009/0223442 A1. Examples of such gas injectors are disclosed in, for example, U.S. Patent Application Serial No. 61/157,112, filed on Mar. As used herein, the term "gas" includes a gas (a fluid that does not have a separate shape or volume) and a vapor (including a gas that diffuses a liquid or solid matter suspended therein), and the terms "gas" and "vapor" are used. This article can be used synonymously.

Embodiments of the invention include and utilize a deposition system that includes one or more prior gas flooding furnaces located within the reaction chamber. FIG. 1 illustrates a deposition system 100 that includes a reaction chamber 102 that is at least substantially closed. In some embodiments, deposition system 100 can include a CVD system and can include a VPE deposition system (eg, an HVPE deposition system).

Reaction chamber 102 may be defined by a top wall 104, a bottom wall 106, and one or more side walls. The sidewalls may be defined by one or more components of the subassembly of the deposition system. For example, the first sidewall 108A can include an assembly of injection injector assembly 110 for injecting one or more gases into the reaction chamber 102, and the second sidewall 108B can include for exhausting gas from the reaction chamber 102 and for The substrate is loaded into the reaction chamber 102 and the discharge of the substrate and the assembly of the carrier assembly 112 are unloaded from the reaction chamber 102.

The deposition system 100 includes a substrate support structure 114 (eg, a pedestal) configured to support one or more workpiece substrates 116 at which the substrate support structure is desired The material within the deposition system 100 is deposited or otherwise provided. For example, the workpiece substrate 116 can include dies or wafers. The deposition system 100 further includes a heating element 118 (Fig. 1) that can be used to selectively heat the deposition system 100 such that the average temperature within the reaction chamber 102 can be controlled to a desired elevated temperature during the deposition process. Heating element 118 can include, for example, a resistive heating element or a radiant heating element (eg, a heat lamp).

As shown in FIG. 1, the substrate support structure 114 can be mounted on a rotating shaft 119 that can be coupled (eg, direct structural coupling, magnetic coupling, etc.) to a substrate configured to drive the rotating shaft 119 and thereby the reaction chamber 102. A drive for rotating the support structure 114 (not shown, such as an electric motor).

In some embodiments, one or more of the top wall 104, the bottom wall 106, the substrate support structure 114, the rotating shaft 119, and any other component within the reaction chamber 102 can be at least substantially constructed of a refractory ceramic material. Materials such as ceramic oxides (eg, ceria (quartz), alumina, zirconia, etc.), carbides (eg, tantalum carbide, boron carbide, etc.) or nitrides (eg, tantalum nitride, nitride) Boron, etc.). According to one non-limiting example, the top wall 104, the bottom wall 106, the substrate support structure 114, and the rotating shaft 119 can comprise transparent quartz such that thermal energy radiated by the heating element 118 passes through the regions and heats the gas within the reaction chamber 102.

The deposition system 100 further includes an airflow system for injecting one or more gases into the reaction chamber 102 and expelling gases from the reaction chamber 102. With continued reference to FIG. 1, deposition system 100 can include five gas inflow conduits 120A-120E that carry gases from respective gas sources 122A-122E and into injector subassembly 110. Air flow control can be used as appropriate Means (e.g., valves and/or mass flow controllers (not shown)) are used to selectively control the flow of gas through the gas inflow conduits 120A-120E, respectively.

In some embodiments, at least one of the gas sources 122A-122F can comprise an external source of at least one of GaCl ₃ , InCl _{3 ,} or AlCl ₃ , as described in US Patent Application Publication No. US 2009/0223442 A1. set forth. GaCl ₃ , InCl ₃ and AlCl ₃ may each be in the form of a dimer (for example, Ga ₂ Cl ₆ , In ₂ Cl ₆ and Al ₂ Cl ₆ ). Thus, at least one of the gas sources 122A-122F can comprise a dimer such as Ga ₂ Cl ₆ , In ₂ Cl ₆ or Al ₂ Cl ₆ .

In embodiments in which one or more of gas sources 122A-122E are or include a source of GaCl _{3 , the} source of GaCl ₃ includes a reservoir of liquid GaCl ₃ maintained at a temperature of at least 78 ° C (eg, about 130 ° C), And may include physical components for enhancing the evaporation rate of the liquid GaCl ₃ . The physical component can include, for example, a device configured to agitate liquid GaCl ₃ , a device configured to spray liquid GaCl ₃ , a device configured to rapidly flow a carrier gas over the liquid GaCl ₃ , configured The apparatus for bubbling the carrier gas through the liquid GaCl ₃ is configured to ultrasonically disperse the liquid GaCl ₃ and the like (for example, a piezoelectric device). According to one non-limiting example, a carrier gas (eg, He, N ₂ , H _{2 ,} or Ar) can be bubbled through the liquid GaCl ₃ while maintaining the liquid GaCl ₃ at a temperature of at least 78 ° C, such that the source gas can include Or a variety of carrier gases.

In some embodiments of the invention, the flux of GaCl ₃ vapor through one or more of the gas inflow conduits 120A-120E may be controlled. For example, when the carrier gas was bubbled through the liquid in the Example _3, GaCl, 122A-122E of GaCl ₃ from a gas source or a flux depends on a number of factors, including the top (e.g.) the temperature for ₃ GaCl, GaCl ₃ The pressure and the flow rate of the carrier gas passing through the GaCl ₃ . Although in principle the mass flux of GaCl ₃ can be controlled by any of these parameters, in some embodiments, the mass flow of GaCl ₃ can be controlled by varying the flow of the carrier gas using a mass flow controller. the amount.

In some embodiments, one or more of the gas sources 122A-122E can be capable of holding about 25 kg or more of GaCl ₃ , about 35 kg or more of GaCl _{3 ,} or even about 50 kg or more of GaCl ₃ . For example, a GaCl ₃ source can be capable of containing between about 50 kg and 100 kg of GaCl ₃ (eg, between about 60 kg and 70 kg). Additionally, a plurality of GaCl ₃ sources can be connected together using a manifold to form a single source of gas sources 122A-122E to allow switching from one gas source to another without disrupting the operation of deposition system 100 and/or use. The air source can be removed and replaced with a new full source while the deposition system 100 remains operational.

In some embodiments, the temperature of the gas inflow conduits 120A-120E can be controlled between the gas sources 122A-122E and the reaction chamber 102. The temperature of the gas inflow conduits 120A-120E and associated mass flow sensors, controllers, and the like may be gradually increased from the first temperature (e.g., about 78 ° C or higher) at the discharge ports of the respective gas sources 122A-122E to the reaction. The chamber 102 enters a second temperature at the point (e.g., about 150 ° C or less) to prevent gas (e.g., GaCl ₃ vapor) from condensing in the gas inflow conduits 120A-120E. Optionally, the gas inflow conduits 120A-120E between the respective gas sources 122A-122E and the reaction chamber 102 can be about 18 feet or less, about 12 feet or less, or even about 6 feet or less in length. One or more pressure control systems can be used to control the pressure of the source gas.

In other embodiments, deposition system 100 can include less than 5 (eg, 1- 4) a gas inflow conduit and a respective gas source, or deposition system 100 may include greater than 5 (eg, 6, 7, etc.) gas inflow conduits and respective gas sources.

One or more of the gas inflow conduits 120A-120E extend into the reaction chamber 102 via the injector assembly 110. The injector subassembly 110 can include one or more gas inflow conduits 120A-120E through which the material segments extend. One or more fluid conduits 111 can extend through the length of material. The heat exchange fluid can be driven through one or more fluid conduits 111 to maintain one or more gases flowing through the injection subassembly 110 via the gas inflow conduits 120A-120E during the operation of the deposition system 100 within a desired temperature range. For example, it may be desirable to maintain one or more gases flowing through the injection sub-assembly 110 via gas inflow conduits 120A-120E at a temperature of less than about 200 ° C (150 ° C) during operation of the deposition system.

One or more of the gas inflow conduits 120A-120E extend into the pre-discharge gas furnace 130 disposed within the reaction chamber 102. In some embodiments, the precursor gas furnace 130 can be disposed at least substantially completely within the reaction chamber 102.

2 is a cross-sectional side view of the gas flooding furnace 130 of FIG. The furnace 130 of the embodiment of Figures 1 and 2 comprises five (5) generally plate-like structures 132A-132E that are attached together and sized and configured to be One or more precursor gas flow paths extending through the furnace 130 are defined in the chamber defined between the plate-like structures 132A-132E. The generally plate-like structure 132A-132E can comprise, for example, transparent quartz such that thermal energy radiated by the heating element 118 passes through the structures 132A-132E and heats one or more precursor gases in the furnace 130.

As shown in FIG. 2, the first plate structure 132A and the second plate structure 132B can be coupled together to define a chamber 134 therebetween. The plurality of integral ridge-type projections 136 on the first plate structure 132A can subdivide the chamber 134 into one or more flow paths extending from the inlet 138 of the chamber 134 to the outlet 140 of the chamber 134.

3 is a top plan view of the first plate structure 132 and illustrates the upper ridge-shaped projection 136 and thus the flow path defined in the chamber 134. As shown in FIG. 3, the protrusion 136 defines a flow path section having a serpentine configuration that extends through the furnace 130 (FIG. 2). The projections 136 can include alternating walls having openings 138 at the lateral ends of the projections 136 and at the center of the projections 136, as shown in FIG. Thus, in this configuration, as shown in FIG. 3, gas may enter chamber 134 at a central region adjacent chamber 134, laterally outward toward the lateral side of furnace 130, through the lateral direction of one of projections 136. The opening 138 at the end returns toward the central region of the chamber 134 and passes through another opening 138 at the center of the other projection 136. This flow pattern is repeated until gas exits the chamber 134 in a serpentine manner from the inlet 138 to the opposite side of the plate 132A.

The residence time of one or more precursor gases in furnace 130 can be selectively increased by flowing one or more precursor gases through the flow path section extending through furnace 130.

Referring again to FIG. 2, the inlet 138 leading to the chamber 134 can be defined by, for example, a tubular member 142. One of the gas inflow conduits 120A-120E (e.g., gas inflow conduit 120B) can extend to and couple with the tubular member 142, as shown in FIG. A hermetic seal can be formed between the gas inflow conduit 1201B and the tubular member 142 using a sealing member 144 (eg, a polymeric O-ring). Tubular component 142 may include, for example, an opaque quartz material to prevent thermal energy emitted from the heating element 118 from heating the sealing member 144 to an elevated temperature that causes the sealing member 144 to degrade. Additionally, cooling the injection subassembly 110 using the flow of cooling fluid through the fluid conduit 111 prevents excessive heating and eventual degradation of the sealing member 144. By maintaining the temperature of the sealing member 144 below about 200 ° C, the sealing member 144 can be used when the gas inflow conduits 120A-120E comprise a metal or metal alloy (eg, steel) and the tubular member 142 comprises a refractory material (eg, quartz). A proper seal is maintained between one of the gas inflow conduits 120A-120E and the tubular member 142. The tubular member 142 and the first plate structure 132A can be joined together to form a single unitary quartz body.

As shown in Figures 2 and 3, the plate-like structures 132A, 132B can include complementary sealing features 147A, 147B (e.g., ridges and corresponding depressions) that extend adjacent the perimeter of the plate-like structures 132A, 132B and The chamber 134 between the plate-like structures 132A, 132B is at least substantially hermetically sealed. Thus, gas within chamber 134 is prevented from flowing laterally from chamber 134 and the gases are forced from chamber 134 through outlet 140 (Fig. 2).

Optionally, the protrusion 136 can be configured such that its height is slightly less than the distance separating the surface 152 of the first plate structure 132A from which the protrusion 136 extends and the opposing surface 154 of the second plate structure 132B. Thus, a small gap can be provided between the protrusion 136 and the surface 154 of the second plate structure 132B. Although a very small amount of gas can leak through the gaps, this small amount of leakage does not adversely affect the average residence time of the precursor gas molecules within chamber 134. By configuring the protrusions 136 in this manner, the height variation of the protrusions 136 caused by the tolerances in the manufacturing process for forming the plate-type structures 132A, 132B can be explained, thereby unintentionally The protrusions 136 that are manufactured with an excess height do not prevent proper sealing between the plate structures 132A, 132B by the complementary sealing features 147A, 147B.

As shown in FIG. 2, the outlet 140 of the chamber 134 between the plate structures 132A, 132B leads to the inlet 148 of the chamber 150 between the third plate structure 132C and the fourth plate structure 132D. The chamber 150 can be configured such that one or more of the gases flow in the chamber 150 from the inlet 148 toward the outlet 156 in a substantially linear manner. For example, chamber 150 may have a generally rectangular and uniform cross-sectional shape between inlet 148 and outlet 156. Thus, chamber 150 can be configured to flow one or more gases in a more layered rather than turbulent manner.

The plate structures 132C, 132D can include complementary sealing features 158A, 158B (eg, ridges and corresponding depressions) that extend adjacent the perimeter of the plate structures 132C, 132D and at least substantially hermetically seal the plate structure Room 150 between 132C and 132D. Thus, gas within chamber 150 is prevented from flowing laterally from chamber 150 and forces the gases from chamber 150 through outlet 156.

The outlet 156 can include, for example, an elongated opening (eg, a slit) that extends through the plate-like structure 132D and adjacent an end of the plate-shaped structure opposite the end adjacent the inlet 148.

With continued reference to FIG. 2, the outlet 156 of the chamber 150 between the plate structures 132C, 132D leads to the inlet 160 of the chamber 162 between the fourth plate structure 132D and the fifth plate structure 132E. Chamber 162 can be configured such that one or more of the gases flow in chamber 162 from inlet 160 toward outlet 164 in a generally linear manner. For example, chamber 162 may have a substantially between inlet 160 and outlet 164 A rectangular shape with a uniform size. Thus, chamber 162 can be configured to flow one or more gases in a more layered, rather than turbulent, manner similar to that previously described with reference to chamber 150.

The plate-like structures 132D, 132E can include complementary sealing features (e.g., ridges and corresponding depressions) on one side of the plate-like structures 132D, 132E that are adjacent one of the perimeters of the plate-like structures 132D, 132E. The chamber 162 between the plate structures 132D, 132E is extended and sealed. A gap is provided between the plate-like structures 132D, 132E with respect to one of the inlets 160, the gap defining an outlet 164 of the chamber 162. Thus, gas enters chamber 162 via inlet 160, flows through chamber 162 toward outlet 164 (and prevents lateral flow out of chamber 162 by complementary sealing features 166A, 166B), and exits chamber 162 via outlet 164. A section of one or more gas flow paths defined by chamber 150 and chamber 162 within furnace 130 is configured to impart a laminar flow of one or more precursor gases that are driven through one or more flow paths within furnace 130, And reduce any turbulence in it.

The outlet 164 is configured to output one or more precursor gases from the furnace 130 to an interior region within the reaction chamber 102. FIG. 4 is a perspective view of furnace 130 and illustrates outlet 164. As shown in FIG. 4, the outlet 164 can have a rectangular cross-sectional shape that can help maintain a laminar flow of one or more precursor gases from the furnace 130 and into the interior region within the reaction chamber 102. The outlet 164 can be sized and configured to output a sheet of flowing precursor gas in a lateral direction above the upper surface 168 of the substrate support structure 114. As shown in FIG. 4, the fourth substantially end surface 180 of the plate-like structure 132D and the end surface 182 of the fifth substantially plate-like structure 132E (the gap therebetween defines the exit of the chamber 162) The shape of the port 164, as previously discussed, can generally match the shape of the workpiece substrate 116 that is supported on the substrate support structure 114 and is intended to deposit material thereon by flowing one or more precursor gases from the furnace 130. For example, in embodiments where the workpiece substrate 116 includes a die or wafer having a generally circular perimeter, the surfaces 180, 182 can have an arcuate shape that generally matches the peripheral features of the workpiece substrate 116 to be processed. In this configuration, the distance between the outlet 164 and the outer edge of the workpiece substrate 116 can be substantially constant across the outlet 164. In this configuration, one or more precursor gases flowing from the outlet 164 are prevented from mixing with other precursor gases in the reaction chamber 102 until they are located near the surface of the workpiece substrate 116 (to be deposited by the precursor gas). Undesired deposition of material on components of deposition system 100 is avoided.

Referring again to FIG. 1, the minimum flow path distance through the pre-discharge gas flow path defined by chamber 134, chamber 150, and chamber 162 may be at least about twelve (12) miles. In the exemplary embodiment of FIGS. 1-3, for each of the eight (8) serpentine branch segments, the flow path distance is about twelve (12) miles.

Additionally, deposition system 100 can be configured such that one or more of the precursor gases that are driven through one or more of the flow paths through furnace 130 have a residence time of at least about 0.2 seconds (eg, about 0.48 seconds) or even A few seconds or more.

Referring again to FIG. 1, heating element 118 can include a first group 170 of heating elements 118 and a second group 172 of heating elements 118. The first group 170 of heating elements 118 can be positioned and configured to impart heat to the furnace 130 and heat the gas therein. For example, the first group 170 of heating elements 118 can be located below the reaction chamber 102 below the furnace 130, as shown in FIG. In other embodiments, plus The first group 170 of thermal elements 118 can be located above the reaction chamber 102 on the furnace 130, or can include both a heating element 118 located below the reaction chamber 102 below the furnace 130 and a heating element located above the reaction chamber 102 on the furnace 130. . The second group 172 of heating elements 118 can be positioned and configured to impart thermal energy to the substrate support structure 114 and any of the workpiece substrates supported thereon. For example, the second group 172 of heating elements 118 can be located below the reaction chamber 102 below the substrate support structure 114, as shown in FIG. In other embodiments, the second group 172 of heating elements 118 can be located above the reaction chamber 102 on the substrate support structure 114, or can include a heating element 118 under the reaction chamber 102 below the substrate support structure 114 and a substrate support structure. Both the heating elements above the reaction chamber 102 on 114.

The first group 170 of heating elements 118 can be separated from the second group 172 of heating elements 118 by a heat reflective or thermally insulating barrier 174. By way of example and not limitation, the barrier 174 can include a gold-plated metal plate between the first group 170 of heating elements 118 and the second group 172 of heating elements 118. The metal sheets can be oriented to permit independent control of heating of the furnace 130 (by the first group 170 of heating elements 118) and heating of the substrate support structure 114 (by the second group 172 of heating elements 118). In other words, the barrier 174 can be positioned and oriented to reduce or prevent heating of the substrate support structure 114 by the first group 170 of heating elements 118 and to reduce or prevent heating of the furnace 130 by the second group 172 of heating elements 118. .

The first group 170 of heating elements 118 can include a plurality of heating elements 118 that can be controlled independently of one another. In other words, the thermal energy emitted by each column of heating elements 118 can be independently controlled. The columns may be transverse to the passage through the reaction chamber 102 The net flow direction of the gas, which is in the direction extending from left to right in the perspective view of Fig. 1, is oriented. Thus, if desired, an independent control train of heating elements 118 can be used to provide a selected gradient in furnace 130. Similarly, the second group 172 of heating elements 118 can also include a plurality of heating elements 118 that can be controlled independently of one another. Thus, a selected thermal gradient can also be provided in the substrate support structure 114 if desired.

Optionally, a passive heat transfer structure (e.g., a structure comprising a material having a behavior similar to blackbody) can be positioned adjacent or adjacent to at least a portion of the precursor gas furnace 130 within the reaction chamber 102 to improve heat transfer to the precursor gas within the furnace 130. .

A passive heat transfer structure (e.g., a structure comprising a material having a behavior similar to a black body) can be provided in the reaction chamber 102, as disclosed, for example, in U.S. Patent Application Publication No. A. The invention is disclosed in US 2009/0214785 A1. By way of example and not limitation, the precursor gas furnace 130 can include a passive heat transfer plate 178 that can be positioned between the second plate structure 132B and the third plate structure 132C, as shown in FIG. The passive heat transfer plate 178 can improve the transfer of heat provided by the heating element 118 to the precursor gas within the furnace 130 and can improve the uniformity and uniformity of temperature within the furnace 130. The passive heat transfer plate 178 can comprise a material having a high emissivity value (close to one) (black body material) that is also capable of withstanding the high temperature corrosive environment that can be encountered within the reaction chamber 102. Such materials may include, for example, aluminum nitride (AlN), tantalum carbide (SiC), and boron carbide (B ₄ C) having emissivity values of 0.98, 0.92, and 0.92, respectively. Thus, the passive heat transfer plate 178 can absorb the thermal energy emitted by the heating element 118 and re-emit the thermal energy into the furnace 130 and one or more of the precursor gases therein.

With continued reference to FIG. 1, the discharge and loading subassembly 112 can include a vacuum chamber 184 in which gas flowing through the reaction chamber 102 is drawn by vacuum and discharged from the reaction chamber 102. As shown in FIG. 1, vacuum chamber 184 can be located below reaction chamber 102.

The discharge and load subassembly 112 can further include a purge gas curtain device 186 configured and oriented to provide a substantially planar screen of the flow purge gas flowing from the purge gas curtain device 186 and into the vacuum chamber 184. The vent and load subassembly 112 can also include a gate 188 that can be selectively opened for loading and/or unloading the workpiece substrate 116 from the substrate support structure 114 and selectively closed to process the workpiece substrate 116 using the deposition system 100. The purge gas curtain emitted by the purge gas curtain device 186 can reduce or prevent parasitic deposition of material on the gate 188 during the deposition process.

Gaseous byproducts, carrier gas, and any excess precursor gases may be withdrawn from reaction chamber 102 via discharge and carrier assembly 112.

5 is a schematic diagram showing a plan view of another embodiment of a deposition system 200 similar to the deposition system 100 of FIG. 1, but including three precursor gas furnaces 130A, 130B located within the interior region of the reaction chamber 102. , 130C. Thus, each of the precursor gas furnaces 130A, 130B, 130C can be used to inject the same or different precursor gases into the reaction chamber 102. By way of example and not limitation, the precursor gas furnace 130B can be used to inject GaCl ₃ into the reaction chamber 102, the precursor gas furnace 130A can also be used to inject GaCl ₃ into the reaction chamber 102, and the precursor gas furnace 130C can also be used to convert GaCl. _{3 is} injected into the reaction chamber 102. According to another example, using the precursor gas furnace 130B GaCl ₃ injected into the reaction chamber 102, may use the precursor gas furnace 130A InCl ₃ injected into the reaction chamber 102, and may use the precursor gas furnace 130C AlCl ₃ injected into the reaction chamber 102 . Optionally, a Group III element precursor gas may be injected into the reaction chamber 102 using a precursor gas furnace 130B for deposition of the III-V semiconductor material, and one or more may be injected using the precursor gas furnaces 130A, 130C for one or more A dopant element is deposited into the precursor gas in the III-V semiconductor material.

Embodiments of deposition systems (e.g., deposition system 100 of FIG. 1 and deposition system 200 of FIG. 5) as described herein may enable a relatively large amount of high temperature precursor gas to be introduced into reaction chamber 102 while maintaining precursor gases spatially with each other The separation is continued until the gas is located immediately adjacent to the workpiece substrate 116 on which the material is deposited, which improves the utilization efficiency of the precursor gas.

In accordance with other embodiments of the present disclosure, semiconductor materials can be deposited on the workpiece substrate 116 using embodiments of deposition systems (e.g., deposition system 100 of FIG. 1 and deposition system 200 of FIG. 5) as set forth herein.

Referring to Figure 1, the Group III element precursor gas and the Group V element precursor gas can be driven into the reaction chamber 102 via separate conduits in the gas inflow conduits 120A-120E. The Group III element precursor gas may be driven to flow through at least one of the gas flow paths prior to the gas flooding furnace 130 disposed in the reaction chamber 102 to heat the Group III element precursor gas.

After heating the Group III element precursor gas in the furnace 130, the Group V element precursor gas and the Group III element precursor gas may be mixed together in the reaction chamber 102 over the workpiece substrate 116. The surface of the workpiece substrate 116 may be exposed to a mixture of a Group V element precursor gas and a Group III element precursor gas. A III-V semiconductor material is formed on the surface of the workpiece substrate 116.

As mentioned previously, the flow path through which the Group III element precursor gas is driven may include at least one serpentine configuration (eg, configuration of flow paths within chamber 134) and at least one configured to provide III A section of the laminar flow of the group element precursor gas (e.g., configuration of the flow path within chamber 150 and chamber 162). The Group III element precursor gas can be driven out of at least one section configured to provide laminar flow and into the interior region within the reaction chamber 102 outside of the furnace 130. The Group III element precursor gas may exit from the furnace 130 in the form of a sheet of Group III element precursor gas in the lateral direction above the upper surface of the workpiece substrate 116, as previously described herein.

The Group III element precursor gas may comprise one or more of GaCl ₃ , InCl ₃ and AlCl ₃ . In such embodiments, heating the Group III element precursor gas may decompose at least one of GaCl ₃ , InCl _{3 ,} and AlCl ₃ to form at least one of GaCl, InCl, AlCl, and a chlorinated species (eg, HCl). .

Other non-limiting, exemplary embodiments of the invention are set forth below.

Embodiment 1: A deposition system comprising: an at least substantially closed reaction chamber defined by a top wall, a bottom wall, and at least one sidewall; a susceptor disposed at least partially within the reaction chamber and configured to support a reaction a substrate for the interior; and a gas input system for injecting one or more precursor gases into the reaction chamber, the gas input system comprising at least one pre-discharge gas furnace disposed in the reaction chamber, at least one extending through the at least one precursor gas furnace Drive the gas flow path.

Embodiment 2: The deposition system of Embodiment 1, wherein at least one of the precursor gas flow paths extending through the at least one precursor gas furnace comprises at least one A section with a serpentine configuration.

Embodiment 3: The deposition system of Embodiment 1 or Embodiment 2, wherein the at least one precursor gas flow path has at least one zone configured to provide one or more laminar flows that are driven to flow through the at least one flow path segment.

Embodiment 4: The deposition system of Embodiment 3, wherein the at least one section configured to provide laminar flow comprises an outlet configured to output one or more precursor gases into an interior region of the reaction chamber.

Embodiment 5: The deposition system of Embodiment 4, wherein the outlet has a rectangular cross-sectional shape.

Embodiment 6: The deposition system of Embodiment 4, wherein the outlet is sized and configured to output a sheet of flowing precursor gas in a lateral direction above the upper surface of the susceptor.

The deposition system of any of embodiments 1 to 6, wherein the minimum flow path distance of the at least one precursor gas flow path is at least about twelve inches.

Embodiment 8: The deposition system of any of embodiments 1 to 7, wherein the deposition system is configured such that one or more of the precursor gases are driven to flow through the at least one precursor gas flow path before the gas is retained in the at least one precursor gas furnace The time is at least about 0.2 seconds.

Embodiment 9: The deposition system of any of embodiments 1 to 8, further comprising at least one heating element configured to impart thermal energy to at least one precursor gas furnace.

Embodiment 10: The deposition system of any of embodiments 1 to 9, wherein The lesser one precursor gas furnace includes at least two substantially planar plates attached together and configured to define at least a portion of at least one precursor gas flow path therebetween.

Embodiment 11: The deposition system of any of embodiments 1 to 10, wherein the at least one precursor gas furnace comprises two or more precursor gas furnaces.

The deposition system of any of embodiments 1-11, further comprising: at least one precursor gas source; and at least one configured to carry the precursor gas from the precursor gas source to at least one of the reaction chambers A conduit in a precursor gas furnace.

Embodiment 13: The deposition system of Embodiment 12, wherein the at least one precursor gas source comprises a source of at least one of GaCl ₃ , InCl _{3 ,} and AlCl ₃ .

Embodiment 14: A method of depositing a semiconductor material, comprising: flowing a Group III element precursor gas and a Group V element precursor gas separately into a reaction chamber, and flowing a Group III element precursor gas through at least one extension through at least one arrangement Driving a gas flow path before the gas furnace in the reaction chamber to heat the Group III element precursor gas, and heating the Group III element precursor gas in at least one precursor gas furnace in the reaction chamber, and then mixing the Group V element in the reaction chamber above the substrate a precursor gas and a Group III element precursor gas; and exposing the surface of the substrate to a mixture of a Group V element precursor gas and a Group III element precursor gas to form a III-V semiconductor material on the surface of the substrate.

Embodiment 15: The method of Embodiment 14, wherein heating the Group III element precursor gas comprises decomposing at least one of GaCl ₃ , InCl _{3 ,} and AlCl ₃ to form at least one of GaCl, InCl, and AlCl, and a chlorinated species .

Embodiment 16: The method of Embodiment 15, wherein at least one of GaCl ₃ , InCl ₃ and AlCl ₃ is decomposed to form at least one of GaCl, InCl and AlCl and the chlorinating substance comprises decomposing GaCl ₃ to form GaCl and Chlorinated material.

The method of any one of embodiments 14 to 16, wherein the at least one precursor gas flow path comprises at least one section having a serpentine configuration, and wherein the Group III element precursor gas is passed through at least one precursor The gas flow path includes a section that causes the Group III element precursor gas to flow through at least one of the precursor gas flow paths having a serpentine configuration.

The method of any one of embodiments 14 to 17, wherein the at least one precursor gas flow path has at least one section configured to provide a laminar flow of a Group III element precursor gas, and wherein the third stage is The flow of the group element precursor gas through the at least one precursor gas flow path comprises flowing a Group III element precursor gas through at least one section of the laminar flow configured to provide a Group III element precursor gas.

Embodiment 19: The method of Embodiment 18, further comprising flowing a Group III element precursor gas from at least one section of the laminar flow configured to provide a Group III element precursor gas and flowing into an interior region of the reaction chamber .

Embodiment 20: The method of Embodiment 19, wherein the cascading of the Group III element precursor gas from at least one of the laminar flows configured to provide a Group III element precursor gas is further included above the upper surface of the substrate to form a A layer of a Group III element precursor gas flowing in a lateral direction.

The method of any one of embodiments 14 to 20, wherein flowing the Group III element precursor gas through at least one of the precursor gas flow paths extending through the at least one precursor gas furnace comprises causing the Group III element precursor gas to At least one of the precursor gas furnaces flows through a minimum distance of at least about twelve inches.

The method of any one of embodiments 14 to 21, wherein flowing the Group III element precursor gas through at least one of the precursor gas flow paths extending through the at least one precursor gas furnace comprises causing the Group III element precursor gas to At least one precursor gas furnace is retained for at least about 0.2 seconds.

The method of any one of embodiments 14 to 22, further comprising imparting at least one precursor gas heat energy using the at least one heating element.

The above-described embodiments of the present invention are not intended to limit the scope of the present invention, and the present invention is intended to be limited only by the scope of the accompanying claims. Any equivalent embodiments are intended to be within the scope of the invention. In fact, the various modifications of the invention (such as alternative and useful combinations of the elements recited) are apparent from the description of those skilled in the art. Such modifications are also intended to fall within the scope of the appended claims.

100‧‧‧Deposition system

102‧‧‧Reaction room

104‧‧‧ top wall

106‧‧‧Bottom wall

108A‧‧‧First side wall

108B‧‧‧second side wall

110‧‧‧Injection subassembly

111‧‧‧Fluid conduit

112‧‧‧Draining and loading sub-assembly

114‧‧‧Substrate support structure

116‧‧‧Working substrate

118‧‧‧ heating element

119‧‧‧ shaft

120A‧‧‧ gas inflow conduit

120B‧‧‧ gas inflow conduit

120C‧‧‧ gas inflow conduit

120D‧‧‧ gas inflow conduit

120E‧‧‧ gas inflow conduit

122A‧‧‧ gas source

122B‧‧‧ gas source

122C‧‧‧ gas source

122D‧‧‧ gas source

122E‧‧‧ gas source

130‧‧‧Precursor gas furnace

130A‧‧‧Precursor gas furnace

130B‧‧‧Precursor gas furnace

130C‧‧‧Precursor gas furnace

132A‧‧‧First plate structure

132B‧‧‧Second plate structure

132C‧‧‧Three-plate structure

132D‧‧‧fourth plate structure

132E‧‧‧ Fifth plate structure

Room 134‧‧

136‧‧‧ overall ridge-shaped protrusion

138‧‧‧ entrance

140‧‧‧Export

142‧‧‧Tubular parts

144‧‧‧ Sealing parts

147A‧‧‧ Sealing features

147B‧‧‧ Sealing features

148‧‧‧ entrance

Room 150‧‧

156‧‧‧Export

160‧‧‧ entrance

Room 162‧‧

164‧‧‧Export

168‧‧‧ upper surface

170‧‧‧First group

172‧‧‧ second group

174‧‧‧Hot reflective or thermal insulation barrier

178‧‧‧ Passive heat transfer board

180‧‧‧End surface

182‧‧‧End surface

184‧‧‧vacuum room

186‧‧‧Sweeping gas curtain device

188‧‧‧ brake

200‧‧‧Deposition system

1 is a cross-sectional perspective view schematically illustrating an exemplary embodiment of a deposition system of the present invention including a precursor gas furnace located in an interior region of the reaction chamber; and FIG. 2 is a diagram illustrating the gas flooding furnace of FIG. In a cross-sectional side view, the precursor gas furnace includes a plurality of substantially plate-like structures joined together; and FIG. 3 is a top plan view of a substantially plate-shaped structure of the gas-fired furnace of FIGS. 1 and 2; 1 and 2 are perspective views of a gas flooding furnace; and FIG. 5 is a plan view showing another embodiment of the deposition system. It is intended that the deposition system be similar to that of Figure 1 but includes three gas-fired furnaces located within the interior region of the reaction chamber.

100‧‧‧Deposition system

102‧‧‧Reaction room

104‧‧‧ top wall

106‧‧‧Bottom wall

108A‧‧‧First side wall

108B‧‧‧second side wall

110‧‧‧Injection subassembly

111‧‧‧Fluid conduit

112‧‧‧Draining and loading sub-assembly

114‧‧‧Substrate support structure

116‧‧‧Working substrate

118‧‧‧ heating element

119‧‧‧ shaft

120A‧‧‧ gas inflow conduit

120B‧‧‧ gas inflow conduit

120C‧‧‧ gas inflow conduit

120D‧‧‧ gas inflow conduit

120E‧‧‧ gas inflow conduit

122A‧‧‧ gas source

122B‧‧‧ gas source

122C‧‧‧ gas source

122D‧‧‧ gas source

122E‧‧‧ gas source

130‧‧‧Precursor gas furnace

168‧‧‧ upper surface

170‧‧‧First group

172‧‧‧ second group

174‧‧‧Hot reflective or thermal insulation barrier

184‧‧‧vacuum room

186‧‧‧Sweeping gas curtain device

188‧‧‧ brake

Claims (15)

A deposition system comprising: an at least substantially closed reaction chamber defined by a top wall, a bottom wall, and at least one sidewall; a susceptor at least partially disposed within the reaction chamber and configured to support the reaction chamber a substrate; and a gas input system for injecting one or more precursor gases into the reaction chamber, the gas input system comprising at least one pre-discharge gas furnace disposed in the reaction chamber, at least one extending through the at least one precursor gas furnace a gas flow path, wherein the at least one precursor gas flow path extending through the at least one precursor gas furnace comprises at least one section having a serpentine configuration, and wherein the at least one precursor gas flow path has at least one configured One or more sections are provided that drive a laminar flow of the precursor gas through the at least one flow path. The deposition system of claim 1, wherein the at least one section configured to provide laminar flow comprises an outlet configured to output one or more precursor gases to an interior region of the reaction chamber. The deposition system of claim 2, wherein the outlet has a rectangular cross-sectional shape. The deposition system of claim 2, wherein the outlet is sized and configured to output a sheet of flowing precursor gas in a lateral direction above the upper surface of the susceptor. The deposition system of claim 1, wherein the minimum flow path distance of the at least one precursor gas flow path is at least about twelve inches. The deposition system of claim 1, further comprising at least one heating element configured to impart thermal energy to the at least one precursor gas furnace. The deposition system of claim 1, wherein the at least one precursor gas furnace comprises at least two substantially planar plates attached together and configured to define at least a portion of the at least one precursor gas flow path therebetween . A method of depositing a semiconductor material, comprising: flowing a Group III element precursor gas and a Group V element precursor gas into a reaction chamber separately; flowing the Group III element precursor gas through at least one extension through at least one of the reactions The indoor precursor gas furnace drives a gas flow path to heat the Group III element precursor gas; wherein the at least one precursor gas flow path includes at least one segment having a serpentine configuration, and wherein the Group III element precursor gas is provided Flowing through the at least one precursor gas flow path includes flowing the Group III element precursor gas through the at least one of the at least one precursor gas flow path having the serpentine configuration, and wherein the at least one precursor gas flow path Means having at least one laminar flow configured to provide a precursor gas of the Group III element, and wherein flowing the Group III element precursor gas through the at least one precursor gas flow path comprises causing the Group III element precursor gas Flowing through the at least one section configured to provide a laminar flow of the Group III element precursor gas; After heating the Group III element precursor gas in the at least one precursor gas furnace in the chamber, mixing the Group V element precursor gas and the Group III element precursor gas in the reaction chamber above the substrate; The surface of the substrate is exposed to a mixture of the Group V element precursor gas and the Group III element precursor gas to form a III-V semiconductor material on the surface of the substrate. The method of claim 8, wherein heating the Group III element precursor gas comprises decomposing at least one of GaCl ₃ , InCl _{3 ,} and AlCl ₃ to form at least one of GaCl, InCl, and AlCl, and a chlorinated species. The method of claim 9, wherein at least one of GaCl ₃ , InCl _{3 ,} and AlCl ₃ is decomposed to form at least one of GaCl, InCl, and AlCl, and the chlorinated species comprises decomposing GaCl ₃ to form GaCl and a chlorinated species. The method of claim 8, further comprising flowing the Group III element precursor gas from at least one section configured to provide a laminar flow of the Group III element precursor gas and flowing into an interior region of the reaction chamber. The method of claim 11, wherein the cascading of the Group III element precursor gas from the at least one laminar flow configured to provide the Group III element precursor gas is further included above the upper surface of the substrate to form a A sheet of the Group III element precursor gas flowing in the transverse direction. The method of claim 8, wherein flowing the Group III element precursor gas through the at least one precursor gas flow path through the at least one precursor gas furnace comprises causing the Group III element precursor gas to be in the at least one precursor gas furnace Flow through a minimum distance of at least about 12 inches. The method of claim 8, wherein flowing the Group III element precursor gas through the at least one precursor gas flow path through the at least one precursor gas furnace comprises causing the Group III element precursor gas to be in the at least one precursor gas furnace Retention is at least about 0.2 seconds. The method of claim 8, further comprising imparting thermal energy to the at least one precursor gas furnace using at least one heating element.