TW201310684A - Method for manufacturing solar cell module and solar cell module - Google Patents
Method for manufacturing solar cell module and solar cell module Download PDFInfo
- Publication number
- TW201310684A TW201310684A TW100131278A TW100131278A TW201310684A TW 201310684 A TW201310684 A TW 201310684A TW 100131278 A TW100131278 A TW 100131278A TW 100131278 A TW100131278 A TW 100131278A TW 201310684 A TW201310684 A TW 201310684A
- Authority
- TW
- Taiwan
- Prior art keywords
- solar cell
- layer
- conversion unit
- photoelectric conversion
- internal electrode
- Prior art date
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
本發明是有關於一種電池製造方法,特別是指一種可將光能轉換為電能的太陽能電池組及其製造方法。The present invention relates to a battery manufacturing method, and more particularly to a solar battery pack capable of converting light energy into electrical energy and a method of manufacturing the same.
目前太陽能電池有非晶矽(a-Si)、微晶矽(μ-Si)、多晶矽(poly-Si)或硒化銅銦鎵(CIGS)等多種薄膜太陽能電池。其中,該非晶矽太陽能電池可吸收的光譜是在紫外光至可見光的部分,而多晶矽、硒化銅銦鎵或微晶矽太陽能電池其吸收的光譜大約在紅外線至可見光的部分。因為太陽光是全波長,因此為了能充分地將各種波長的光線吸收並轉換為電能,一般製造太陽能電池時,是在基板的上下兩側分別成型出一非晶矽太陽能電池及一多晶矽或硒化銅銦鎵太陽能電池。其製造過程中,是利用多次的蒸鍍、濺鍍、化學氣相沉積、或電漿氣相沉積等方式,逐層地在該基板上形成薄膜,因此太陽能電池的薄膜於製造過程中必須歷經多次的高酸鹼或高壓環境,不僅增加製造流程中管控複雜度,也使材料容易發生受損或老化而降低生產良率的狀況。At present, solar cells include a variety of thin film solar cells such as amorphous germanium (a-Si), microcrystalline germanium (μ-Si), polycrystalline germanium (poly-Si) or copper indium gallium selenide (CIGS). Among them, the spectrum absorbable by the amorphous germanium solar cell is in the ultraviolet to visible portion, and the polycrystalline germanium, copper indium gallium selenide or microcrystalline germanium solar cell absorbs a spectrum approximately in the infrared to visible portion. Because the sunlight is full wavelength, in order to fully absorb and convert light of various wavelengths into electric energy, when manufacturing a solar cell, an amorphous germanium solar cell and a polycrystalline germanium or selenium are respectively formed on the upper and lower sides of the substrate. Copper indium gallium solar cells. In the manufacturing process, multiple layers of vapor deposition, sputtering, chemical vapor deposition, or plasma vapor deposition are used to form a thin film on the substrate layer by layer, so the film of the solar cell must be manufactured in the manufacturing process. After many times of high acid-base or high-pressure environment, it not only increases the complexity of control in the manufacturing process, but also makes the material susceptible to damage or aging and reduces the production yield.
因此,本發明之目的,即在提供一種可提高太陽光轉換效率並且兼具製造流程單純而可提高生產良率的太陽能電池組及其製造方法。Accordingly, an object of the present invention is to provide a solar battery module which can improve solar light conversion efficiency and which has a simple manufacturing process and can improve production yield, and a method of manufacturing the same.
於是,本發明太陽能電池組製造方法,用以製造一太陽能電池組,並包含以下步驟:先利用薄膜層疊的方式成形出一個第一太陽能電池。此外,在一可透光的第二下基板上形成一離形層後,再於該離形層上形成一個第二太陽能電池。接著,將該離形層及第二下基板剝離,而與該第二太陽能電池分離。再利用一黏合層,將該第一太陽能電池與該第二太陽能電池疊接,而形成該太陽能電池組。Therefore, the solar cell manufacturing method of the present invention is for manufacturing a solar cell stack, and comprises the steps of: forming a first solar cell by laminating a film. In addition, after forming a release layer on a second substrate that is transparent to light, a second solar cell is formed on the release layer. Next, the release layer and the second lower substrate are peeled off to be separated from the second solar cell. The first solar cell is overlapped with the second solar cell by using an adhesive layer to form the solar cell.
而本發明太陽能電池組,包含:一第一太陽能電池、一第二太陽能電池,及一黏合並疊接該第一太陽能電池與第二太陽能電池的黏合層。該第一太陽能電池包括一可透光的第一基板、一層披覆在該第一基板上且可導電的第一內電極、一披覆在該第一內電極上且可將光轉換為電能的第一光電轉換單元,及一層披覆在該第一光電轉換單元上的第一外電極,該第一光電轉換單元具有一層披覆在該第一內電極上的光吸收層,及一層披覆在該光吸收層上的緩衝層。該第二太陽能電池,包括一個可透光的第二上基板、一層披覆在該第二上基板上且可導電的第二內電極、一披覆在該第二內電極上的第二光電轉換單元,及一層披覆在該第二光電轉換單元上且可導電的第二外電極,該第二光電轉換單元具有一層披覆在該第二內電極上的p型半導體層、一層披覆在該p型半導體層上的本質半導體層,及一層披覆在該本質半導體層上的n型半導體層。The solar battery module of the present invention comprises: a first solar cell, a second solar cell, and an adhesive layer that is adhered and laminated to the first solar cell and the second solar cell. The first solar cell includes a first substrate that is transparent to light, a first inner electrode that is electrically conductive on the first substrate, and a first inner electrode that is coated on the first inner electrode and converts light into electrical energy. a first photoelectric conversion unit, and a first outer electrode coated on the first photoelectric conversion unit, the first photoelectric conversion unit having a light absorbing layer covering the first internal electrode, and a layer of draping a buffer layer overlying the light absorbing layer. The second solar cell includes a second upper substrate that is transparent to light, a second inner electrode that is electrically conductive on the second upper substrate, and a second photoelectric layer that is coated on the second inner electrode. a conversion unit, and a second outer electrode that is electrically conductive on the second photoelectric conversion unit, the second photoelectric conversion unit has a p-type semiconductor layer and a layer of cladding on the second internal electrode An intrinsic semiconductor layer on the p-type semiconductor layer, and an n-type semiconductor layer overlying the intrinsic semiconductor layer.
本發明之有益功效在於:該第一太陽能電池與第二太陽能電池是先分開製造完成,再藉由該黏合層疊接以構成該太陽能電池組,因此可運用現有的製程製造,使製造流程單純而可提高生產良率,同時兼具擴大該太陽能電池組轉換光線的波長範圍。The beneficial effect of the invention is that the first solar cell and the second solar cell are separately manufactured separately, and the solar cell is constructed by the adhesive lamination, so that the existing process manufacturing can be used, and the manufacturing process is simple. It can increase the production yield while at the same time expanding the wavelength range in which the solar cell converts light.
有關本發明之前述及其他技術內容、特點與功效,在以下配合參考圖式之一個較佳實施例的詳細說明中,將可清楚的呈現。The above and other technical contents, features and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments.
參閱圖1、2、3,本發明太陽能電池組製造方法之一較佳實施例,用以製造一太陽能電池組1。該太陽能電池組1包含:一個第一太陽能電池2、一個第二太陽能電池3,及一層夾設在該第一與第二太陽能電池2、3間的黏合層9。Referring to Figures 1, 2 and 3, a preferred embodiment of a method of fabricating a solar cell of the present invention is used to fabricate a solar cell stack 1. The solar battery unit 1 includes a first solar battery 2, a second solar battery 3, and an adhesive layer 9 interposed between the first and second solar cells 2, 3.
該第一太陽能電池2包括一個可透光的第一基板21、一層披覆在該第一基板21上且可導電的第一內電極22、一個披覆在該第一內電極22上的第一光電轉換單元20,及一個披覆在該第一光電轉換單元20上且可導電的第一外電極23。The first solar cell 2 includes a first substrate 21 that is transparent to light, a first inner electrode 22 that is electrically conductive on the first substrate 21, and a first electrode that is coated on the first inner electrode 22. A photoelectric conversion unit 20, and a first outer electrode 23 that is electrically conductive on the first photoelectric conversion unit 20.
所述第一光電轉換單元20可利用光電效應,吸收光線並轉換為電能。本實施例的第一太陽能電池2是硒化銅銦鎵(CGSI)太陽能電池,而該第一光電轉換單元20具有一層披覆在該第一內電極22上的光吸收層40,及一披覆在該光吸收層40上的緩衝層50。The first photoelectric conversion unit 20 can utilize the photoelectric effect to absorb light and convert it into electrical energy. The first solar cell 2 of the embodiment is a copper indium gallium selenide (CGSI) solar cell, and the first photoelectric conversion unit 20 has a light absorbing layer 40 coated on the first internal electrode 22, and a dicing The buffer layer 50 overlying the light absorbing layer 40.
該第二太陽能電池3包括一個可透光的第二上基板33、一層披覆在該第二上基板33上且可導電的第二內電極34、一披覆在該第二內電極34上的第二光電轉換單元30,及一層披覆在該第二光電轉換單元30上且可導電的第二外電極35。The second solar cell 3 includes a second upper substrate 33 that is transparent to light, a second inner electrode 34 that is electrically conductive on the second upper substrate 33, and a second inner electrode 34 that is coated on the second inner electrode 34. And a second photoelectric conversion unit 30, and a second outer electrode 35 that is electrically conductive on the second photoelectric conversion unit 30.
所述第二光電轉換單元30可利用光電效應,吸收光線並轉換為電能。本實施例的第二太陽能電池3是非晶矽(a-Si)薄膜太陽能電池,而該第二光電轉換單元30具有一層披覆在該第二內電極34上的p型半導體層80、一層披覆在該p型半導體層80上的本質半導體層70,及一層披覆在該本質半導體層70上的n型半導體層60。The second photoelectric conversion unit 30 can utilize the photoelectric effect to absorb light and convert it into electrical energy. The second solar cell 3 of the present embodiment is an amorphous germanium (a-Si) thin film solar cell, and the second photoelectric conversion unit 30 has a p-type semiconductor layer 80 and a layer of a layer coated on the second internal electrode 34. An intrinsic semiconductor layer 70 overlying the p-type semiconductor layer 80 and a layer of an n-type semiconductor layer 60 overlying the intrinsic semiconductor layer 70.
該黏合層9是夾設在該第一太陽能電池2的第一基板21,與該第二太陽能電池3的第二外電極35間。The adhesive layer 9 is interposed between the first substrate 21 of the first solar cell 2 and the second outer electrode 35 of the second solar cell 3.
而該太陽能電池組製造方法包含以下步驟:執行步驟91:在該可透光的第一基板21上形成薄膜狀的該第一內電極22,並於該第一內電極22上形成薄膜狀的該光吸收層40,再於該光吸收層40上形成薄膜狀的該緩衝層50,而在該第一內電極22上構成該第一光電轉換單元20,接著在該第一光電轉換單元20的緩衝層50上形成薄膜狀的該第一外電極23,進而構成該第一太陽能電池2。The solar cell manufacturing method includes the following steps: performing step 91: forming the first internal electrode 22 in a film shape on the light-permeable first substrate 21, and forming a film on the first internal electrode 22. The light absorbing layer 40 is further formed with a film-like buffer layer 50 on the light absorbing layer 40, and the first photoelectric conversion unit 20 is formed on the first internal electrode 22, and then in the first photoelectric conversion unit 20 The first outer electrode 23 in the form of a film is formed on the buffer layer 50 to constitute the first solar cell 2.
換言之,本實施例的第一太陽能電池2是由所述第一基板21、第一內電極22、光吸收層40、緩衝層50以及該第一外電極23共同結合而成。In other words, the first solar cell 2 of the present embodiment is formed by the first substrate 21, the first inner electrode 22, the light absorbing layer 40, the buffer layer 50, and the first outer electrode 23 being combined.
在本較佳實施例中,該第一基板21是由玻璃材質製成,然而也可以是透光塑膠材質製成。此外,該第一太陽能電池2是硒化銅銦鎵太陽能電池,而所述第一內電極22是透明導電氧化層(transparent conductive oxide,TCO),且該光吸收層40是硫化鎘(CdS)材質製成,而該緩衝層50是由硒化銅銦鎵(CIGS)材質製成,此外,該第二外電極35是由鉬(Mo)材質製成。In the preferred embodiment, the first substrate 21 is made of a glass material, but may be made of a light transmissive plastic material. In addition, the first solar cell 2 is a copper indium gallium selenide solar cell, and the first inner electrode 22 is a transparent conductive oxide (TCO), and the light absorbing layer 40 is cadmium sulfide (CdS). The material is made of a material, and the buffer layer 50 is made of a copper indium gallium selenide (CIGS) material. Further, the second outer electrode 35 is made of a molybdenum (Mo) material.
而在本較佳實施例中,步驟91是利用蒸鍍或濺鍍方法逐層地形成薄膜在該第一基板21上,以構成該第一太陽能電池2,然而並不以此為限,也可以是利用2電鍍或塗佈的方式來製造。In the preferred embodiment, the step 91 is to form a thin film on the first substrate 21 by using an evaporation or sputtering method to form the first solar cell 2, but not limited thereto. It can be manufactured by means of 2 plating or coating.
再執行步驟92:在可透光的該第二下基板31上形成該離形層32。Step 92 is further performed: forming the release layer 32 on the second lower substrate 31 that is transparent to light.
補充說明的是,該第二下基板31是由玻璃材質製成,然而也可以是透光塑膠材質製成,此外,所述離形層32由聚對二甲苯(paralyne)等高分子材質製成,而本實施例的離形層32是利用塗佈方法形成在該第二下基板31上。It should be noted that the second lower substrate 31 is made of a glass material, but may be made of a light transmissive plastic material. Further, the release layer 32 is made of a polymer material such as parylene. The release layer 32 of the present embodiment is formed on the second lower substrate 31 by a coating method.
接著,執行步驟93:將可透光的該第二上基板33覆蓋結合在該離形層32上,再於該第二上基板33上形成薄膜狀的該第二內電極34,並形成薄膜狀的該p型半導體層60在該第二內電極34上,接著在該p型半導體層60上形成薄膜狀的該本質半導體層70,再形成薄膜狀的該n型半導體層80在該本質半導體層70上,進而在該第二內電極34上構成該第二光電轉換單元30,接著,在該第二光電轉換單元30的n型半導體層80上形成薄膜狀的該第二外電極35,進而在所述離形層32上構成該第二太陽能電池3。Next, step 93 is performed: the second upper substrate 33 that is permeable to light is overlaid on the release layer 32, and the second internal electrode 34 is formed on the second upper substrate 33 to form a film. The p-type semiconductor layer 60 is formed on the second internal electrode 34, and then the intrinsic semiconductor layer 70 is formed on the p-type semiconductor layer 60, and the n-type semiconductor layer 80 is formed into a film shape. The second photoelectric conversion unit 30 is further formed on the semiconductor layer 70, and further on the second internal electrode 34. Then, the second external electrode 35 is formed on the n-type semiconductor layer 80 of the second photoelectric conversion unit 30. The second solar cell 3 is further formed on the release layer 32.
換言之,本實施例的第二太陽能電池3是由該第二上基板33、第二內電極34、p型半導體層60、本質半導體層70、n型半導體層80以及該第二外電極35共同結合而成。In other words, the second solar cell 3 of the present embodiment is shared by the second upper substrate 33, the second internal electrode 34, the p-type semiconductor layer 60, the intrinsic semiconductor layer 70, the n-type semiconductor layer 80, and the second external electrode 35. Combined.
在本較佳實施例中,該第二上基板33是由PET(Polyethylene terephthalate)材質製成,並且是利用塗佈的方式結合在該離形層32上,而所述離形層32是夾設在該第二下基板31與第二上基板33間。In the preferred embodiment, the second upper substrate 33 is made of PET (Polyethylene terephthalate) material and is bonded to the release layer 32 by coating, and the release layer 32 is a clip. It is disposed between the second lower substrate 31 and the second upper substrate 33.
此外,本較佳實施例的第二太陽能電池3是非晶矽(a-Si)薄膜太陽能電池,而所述第二內電極34是透明導電氧化層(TCO),且該p型半導體層60是非晶矽p型半導體薄膜,而該本質層是非晶矽本質型半導體薄膜,並且該n型半導體層80是非晶矽n型半導體薄膜,此外,該第二外電極35是氧化鋅(ZnO)材質薄膜。In addition, the second solar cell 3 of the preferred embodiment is an amorphous germanium (a-Si) thin film solar cell, and the second inner electrode 34 is a transparent conductive oxide layer (TCO), and the p-type semiconductor layer 60 is non- a crystalline p-type semiconductor film, wherein the intrinsic layer is an amorphous germanium intrinsic type semiconductor film, and the n-type semiconductor layer 80 is an amorphous germanium n-type semiconductor film, and further, the second outer electrode 35 is a film of zinc oxide (ZnO) film .
本較佳實施例是利用化學氣相沉積方法在該第二上基板33上逐層地形成薄膜以構成該第二太陽能電池3。In the preferred embodiment, a thin film is formed layer by layer on the second upper substrate 33 by a chemical vapor deposition method to constitute the second solar cell 3.
而在該離形層32上形成該第二太陽能電池3後,接著,執行步驟94:剝離該離形層32,使該第二下基板31與該離形層32同步地脫離該第二太陽能電池3。換言之,是使該第二下基板31與該離形層32脫離該第二上基板33。After the second solar cell 3 is formed on the release layer 32, step 94 is performed: the release layer 32 is peeled off, and the second lower substrate 31 is separated from the release layer 32 from the second solar energy. Battery 3. In other words, the second lower substrate 31 and the release layer 32 are separated from the second upper substrate 33.
由於該第二上基板33是PET材質製成,而具有撓性,可輕微地形變,因此可更順利地與該離形層32分離。Since the second upper substrate 33 is made of a PET material and has flexibility, it can be slightly deformed, so that it can be separated from the release layer 32 more smoothly.
接著,再執行步驟95:利用塗佈的方式在該第二太陽能電池3上以塗佈的方式形成該黏合層9,再將該第一太陽能電池2貼覆在該黏合層9上,以黏合並疊接該第一與第二太陽能電池2、3,而構成該太陽能電池組1。Then, the adhesive layer 9 is formed on the second solar cell 3 by coating, and the first solar cell 2 is pasted on the adhesive layer 9 for bonding. The first and second solar cells 2, 3 are stacked and formed to constitute the solar cell 1.
在本較佳實施例中,該黏合層9是形成在該第二太陽能電池3的第二外電極35,與該第一太陽能電池2的第一基板21間。而本實施例的黏合層9是由乙基醋酸乙烯(ethyl vinylacetate,EVA)材質製成,並且是塗佈在該第一基板21或第二外電極35上,再進一步地疊接該第一與第二太陽能電池2、3,然而,該黏合層9的材質不以本實施例為限,也可以是PVB(Polyvinyl butyral)材質。In the preferred embodiment, the adhesive layer 9 is formed between the second outer electrode 35 of the second solar cell 3 and the first substrate 21 of the first solar cell 2. The adhesive layer 9 of the present embodiment is made of ethyl vinyl acetate (EVA) and coated on the first substrate 21 or the second outer electrode 35, and further laminated. And the second solar cells 2, 3, however, the material of the adhesive layer 9 is not limited to this embodiment, and may be a PVB (Polyvinyl butyral) material.
由於太陽光是接近全波長的光線,並且該第一太陽能電池2與第二太陽能電池3的結構分別是硒化銅銦鎵太陽能電池與非晶矽薄膜太陽能電池,其能隙分別為1.1~1.2eV及1.7~1.8eV,而分別可吸收不同範圍波長的光線,再轉換為電能,因此可增加太陽光轉換效率。Since the sunlight is near full wavelength light, and the structures of the first solar cell 2 and the second solar cell 3 are respectively a copper indium gallium selenide solar cell and an amorphous germanium thin film solar cell, the energy gap is 1.1 to 1.2, respectively. eV and 1.7~1.8eV, respectively, can absorb light of different wavelengths and convert them into electric energy, thus increasing the conversion efficiency of sunlight.
再者,本實施例的太陽能電池組製造方法是先分開形成該第一與第二太陽能電池2、3後,再以該黏合層9進行疊接,因此可運用現有已發展成熟的設備與流程製造,而有效地降低製造的複雜度,並提高該太陽能電池組1的生產良率。Furthermore, in the solar cell manufacturing method of the present embodiment, the first and second solar cells 2 and 3 are separately formed, and then the bonding layer 9 is stacked, so that the existing mature equipment and processes can be used. Manufacture, effectively reducing manufacturing complexity and increasing the production yield of the solar cell 1 .
需要注意的是,本較佳實施例的太陽能電池組1在使用時,是以該第二太陽能電池3朝向光源,也就是光線是由該第二上基板33進入,然而該黏合層9在進行疊接時,也可以是黏合該第一外電極23與該第二上基板33,此時是以該第一太陽能電池2朝向光源,其不影響擴展吸收光線波長範圍的效果。It should be noted that the solar battery module 1 of the preferred embodiment is in use, that is, the second solar battery 3 faces the light source, that is, the light enters from the second upper substrate 33, but the adhesive layer 9 is in progress. In the case of lamination, the first outer electrode 23 and the second upper substrate 33 may be bonded. In this case, the first solar cell 2 faces the light source, and the effect of expanding the wavelength range of the absorbed light is not affected.
進一步說明的是,由於該第一與第二太陽能電池2、3是獨立製造,因此執行本方法時,步驟91可與步驟92、93、94交換順序,也就是先依序執行步驟92、93、94後,再執行步驟91,接著同樣地利用步驟95將該第一太陽能電池2與第二太陽能電池3疊接。It is further explained that since the first and second solar cells 2, 3 are manufactured separately, when the method is executed, step 91 can be exchanged with steps 92, 93, and 94, that is, steps 92 and 93 are sequentially performed first. After 94, step 91 is performed again, and then the first solar cell 2 and the second solar cell 3 are overlapped by the same step 95.
值得一提的是,由於該第一與第二太陽能電池2、3是獨立製造,因此可依照預訂的光照的方向,各別調整各層的成形順序,使該太陽能電池組1可有效地吸收光能。此外,本實施例的第二太陽能電池3也可以是微晶矽薄膜太陽能電池或碲化鎘太陽能電池,同樣可與該第一太陽能電池2配合,達到擴展吸收光線的波長範圍的目的。It is worth mentioning that since the first and second solar cells 2, 3 are independently manufactured, the forming order of the layers can be individually adjusted according to the direction of the predetermined illumination, so that the solar cell 1 can effectively absorb light. can. In addition, the second solar cell 3 of the present embodiment may also be a microcrystalline germanium thin film solar cell or a cadmium telluride solar cell, and can also be combined with the first solar cell 2 to achieve the purpose of expanding the wavelength range of light absorption.
惟以上所述者,僅為本發明之較佳實施例而已,當不能以此限定本發明實施之範圍,即大凡依本發明申請專利範圍及發明說明內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。The above is only the preferred embodiment of the present invention, and the scope of the invention is not limited thereto, that is, the simple equivalent changes and modifications made by the scope of the invention and the description of the invention are All remain within the scope of the invention patent.
1...太陽能電池組1. . . Solar battery pack
2...第一太陽能電池2. . . First solar cell
20...第一光電轉換單元20. . . First photoelectric conversion unit
21...第一基板twenty one. . . First substrate
22...第一內電極twenty two. . . First inner electrode
23...第一外電極twenty three. . . First outer electrode
3...第二太陽能電池3. . . Second solar cell
30...第二光電轉換單元30. . . Second photoelectric conversion unit
31...第二下基板31. . . Second lower substrate
32...離形層32. . . Release layer
33...第二上基板33. . . Second upper substrate
34...第二內電極34. . . Second inner electrode
35...第二外電極35. . . Second outer electrode
40...光吸收層40. . . Light absorbing layer
50...緩衝層50. . . The buffer layer
60...n型半導體層60. . . N-type semiconductor layer
70...本質半導體層70. . . Intrinsic semiconductor layer
80...p型半導體層80. . . P-type semiconductor layer
9...黏合層9. . . Adhesive layer
91~95...步驟91~95. . . step
圖1流程示意圖,主要顯示本發明太陽能電池組製造方法的一較佳實施例的一太陽能電池組;1 is a schematic flow chart mainly showing a solar battery pack of a preferred embodiment of the solar battery module manufacturing method of the present invention;
圖2是一流程示意圖,顯示該較佳實施例;及Figure 2 is a schematic flow chart showing the preferred embodiment; and
圖3是一流程方塊圖,顯示該較佳實施例。Figure 3 is a block diagram showing the preferred embodiment.
1...太陽能電池組1. . . Solar battery pack
2...第一太陽能電池2. . . First solar cell
20...第一光電轉換單元20. . . First photoelectric conversion unit
21...第一基板twenty one. . . First substrate
22...第一內電極twenty two. . . First inner electrode
23...第一外電極twenty three. . . First outer electrode
3...第二太陽能電池3. . . Second solar cell
30...第二光電轉換單元30. . . Second photoelectric conversion unit
33...第二上基板33. . . Second upper substrate
34...第二內電極34. . . Second inner electrode
35...第二外電極35. . . Second outer electrode
40...光吸收層40. . . Light absorbing layer
50...緩衝層50. . . The buffer layer
60...n型半導體層60. . . N-type semiconductor layer
70...本質半導體層70. . . Intrinsic semiconductor layer
80...p型半導體層80. . . P-type semiconductor layer
9...黏合層9. . . Adhesive layer
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW100131278A TW201310684A (en) | 2011-08-31 | 2011-08-31 | Method for manufacturing solar cell module and solar cell module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW100131278A TW201310684A (en) | 2011-08-31 | 2011-08-31 | Method for manufacturing solar cell module and solar cell module |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201310684A true TW201310684A (en) | 2013-03-01 |
Family
ID=48482088
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW100131278A TW201310684A (en) | 2011-08-31 | 2011-08-31 | Method for manufacturing solar cell module and solar cell module |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW201310684A (en) |
-
2011
- 2011-08-31 TW TW100131278A patent/TW201310684A/en unknown
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI500172B (en) | Photoelectric conversion device and manufacturing method thereof | |
TWI514598B (en) | Photoelectric conversion device and method for manufacturing the same | |
TWI514597B (en) | Photoelectric conversion device and method for manufacturing the same | |
US20100059111A1 (en) | Solar Cell Module having Multiple Module Layers and Manufacturing Method Thereof | |
US8872295B2 (en) | Thin film photovoltaic device with enhanced light trapping scheme | |
TWI487129B (en) | Thin film solar cell and method for forming the same | |
KR101703829B1 (en) | Method for manufacturing photovoltaic cells with multiple junctions and multiple electrodes | |
JP2008085224A (en) | Solar battery module | |
CN103872160A (en) | Mixed stacked type solar component and manufacturing method thereof | |
CN113178501A (en) | Flexible photovoltaic module and preparation method thereof | |
WO2008026581A1 (en) | Solar battery module | |
WO2008016042A1 (en) | Solar cell module | |
KR20190000859U (en) | Photovoltaic assembly | |
EP2360741A2 (en) | Photovoltaic module and method for manufacturing the same | |
CN109087961A (en) | A kind of photovoltaic module and preparation method thereof | |
US20080121274A1 (en) | Solar cell module | |
TWI599059B (en) | Arc-bending translucent assembly, use and method for manufacturing thereof | |
WO2014050193A1 (en) | Photoelectric conversion module | |
US8748728B2 (en) | Thin-film solar cell module and a manufacturing method thereof | |
US20120024339A1 (en) | Photovoltaic Module Including Transparent Sheet With Channel | |
TW201310684A (en) | Method for manufacturing solar cell module and solar cell module | |
WO2010074276A1 (en) | Photoelectric conversion module | |
CN102856421A (en) | Novel three-junction thin-film solar cell and production method thereof | |
JP2008091419A (en) | Solar cell module and method of manufacturing the same | |
CN102097509A (en) | Design of five-layered structure of tandem thin-film amorphous silicon solar cell |