TW201309840A - Deposition systems having access gates at desirable locations, and related methods - Google Patents
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Abstract
Description
一般而言,本發明之實施例與在底材上沉積材料之系統,及此等系統之製作和使用方法有關。具體而言,本發明之實施例與在底材上沉積三五族半導體材料之原子層沉積(ALD)方法,以及此等系統之製作和使用方法有關。 In general, embodiments of the present invention relate to systems for depositing materials on substrates, and methods of making and using such systems. In particular, embodiments of the present invention relate to atomic layer deposition (ALD) methods for depositing tri-five semiconductor materials on substrates, and methods of making and using such systems.
化學氣相沉積(CVD)是一種用於在底材上沉積固態材料之化學製程,普遍使用於半導體元件之製造。在化學氣相沉積製程中,一底材被曝露在一種或多種試劑氣體下,該些試劑氣體會進行反應、分解,或反應及分解兩者皆有,以使固體材料在底材表面沉積。 Chemical vapor deposition (CVD) is a chemical process for depositing solid materials on a substrate and is commonly used in the fabrication of semiconductor components. In a chemical vapor deposition process, a substrate is exposed to one or more reagent gases which react, decompose, or react and decompose to deposit solid material on the surface of the substrate.
在本發明所屬技術領域中有一種特定類型之CVD製程,稱為氣相磊晶(VPE)。在VPE製程中,一底材被曝露在一反應腔內之一種或多種試劑蒸汽下,該些試劑氣體以引起一固態材料在該底材之表面上磊晶沉積的方式反應、分解,或反應及分解皆有。VPE製程經常用於沉積三五族半導體材料。在一VPE製程中,當該些試劑蒸汽其中之一包括氫化物蒸汽時,該製程可稱為氫化物氣相磊晶(HVPE)製程。 There is a particular type of CVD process known in the art to which the present invention pertains, referred to as vapor phase epitaxy (VPE). In a VPE process, a substrate is exposed to one or more reagent vapors in a reaction chamber that react, decompose, or react in a manner that causes epitaxial deposition of a solid material on the surface of the substrate. And decomposition. VPE processes are often used to deposit tri-five semiconductor materials. In a VPE process, when one of the reagent vapors includes hydride vapor, the process can be referred to as a hydride vapor phase epitaxy (HVPE) process.
HVPE製程常用於形成諸如氮化鎵(GaN)之三五族半導體材料。在此等製程中,底材上之GaN磊晶生長係由氯化鎵(GaCl)與氨氣(NH3)間之氣相反應而引起,而該氣相反應是在一增溫至大約介於500℃及1,000°C間之反應腔內進行。NH3可從一標準的氨氣來源供應之。 The HVPE process is commonly used to form three or five semiconductor materials such as gallium nitride (GaN). In these processes, the GaN epitaxial growth on the substrate is caused by a gas phase reaction between gallium chloride (GaCl) and ammonia (NH 3 ), and the gas phase reaction is in a temperature increase to about It is carried out in a reaction chamber between 500 ° C and 1,000 ° C. NH 3 can be supplied from a standard source of ammonia.
在一些方法中,提供GaCl蒸汽的方式是讓氯化氫(HCl)氣體(可由HCl氣之一個標準來源供應)通過加熱的液態鎵上方,以在反應腔內原地 形成GaCl。液態鎵可以加熱至介於大約750℃及大約850℃間之溫度。GaCl及NH3可被導向一加熱底材(像是半導體材料晶圓)之表面,例如其上方。於2001年1月30日核發予Solomon等人之美國專利6,179,913號揭露了用於此等系統及方法之一種氣體注入系統,該專利之完整揭露茲以此述及方式納入本說明書。 In some methods, GaCl vapor is provided by passing hydrogen chloride (HCl) gas (which can be supplied from a standard source of HCl gas) over heated liquid gallium to form GaCl in situ within the reaction chamber. The liquid gallium can be heated to a temperature between about 750 ° C and about 850 ° C. GaCl and NH 3 can be directed to the surface of a heated substrate (such as a wafer of semiconductor material), such as above it. A gas injection system for use in such systems and methods is disclosed in U.S. Patent No. 6,179,913, issued toS.
在此等系統中,為補充液態鎵來源,反應腔可能必須開啟而接觸到周圍環境。此外,在此等系統中,反應腔可能無法進行原地清洗。 In such systems, to supplement the source of liquid gallium, the reaction chamber may have to be opened to contact the surrounding environment. In addition, in such systems, the reaction chamber may not be cleaned in situ.
為解決此等問題,已有人開發出採用一前驅物GaCl3外部來源之方法及系統,將前驅物GaCl3直接注入反應腔。此等方法及系統之範例揭示於,舉例而言,美國專利申請公開案號US 2009/0223442 A1中,其係於2009年9月10日以Arena等人之名公開,該專利申請公開之完整揭露茲以此述及方式納入本說明書。 In order to solve such problems, a method and system for using an external source of a precursor, GaCl 3 , have been developed to directly inject the precursor GaCl 3 into the reaction chamber. Examples of such methods and systems are disclosed, for example, in U.S. Patent Application Publication No. US 2009/0223442 A1, issued Sep. 10, 2009, the disclosure of The disclosure is hereby incorporated by reference.
先前已知之沉積系統通常包括一進出閘門,經由該進出閘門,可將工件底材裝載至反應腔內,並在處理後將其從反應腔卸載出來。在該沉積系統中,此等進出閘門往往位在將前驅氣體注入反應腔之前部氣體注入歧管內。 Previously known deposition systems typically include an access gate through which the workpiece substrate can be loaded into the reaction chamber and unloaded from the reaction chamber after processing. In the deposition system, such inlet and outlet gates are often located in the gas injection manifold prior to injecting the precursor gas into the reaction chamber.
本概要之提供旨在以簡要形式介紹一系列概念,此等概念將在本發明之示範性實施例中進一步詳述。本概要之用意並非指出所主張專利標的之主要特點或基本特點,亦非用於限制所主張專利標的之範圍。 The Summary is provided to introduce a selection of concepts in a simplified form, which are further described in the exemplary embodiments of the invention. This summary is not intended to identify key features or essential features of the claimed subject matter, and is not intended to limit the scope of the claimed subject matter.
在一些實施例中,本發明包括沉積系統,其包含一反應腔及至少局部設置在該反應腔內之一底材支撐結構,該底材支撐結構被組構成支撐該反應腔內之一工件底材。該反應腔可由一頂壁、一底壁,以及至少一側壁所界定。該些系統更包括至少一個氣體注入裝置及一真空裝置,該氣體注入裝置係用於在一第一位置將含有至少一種前驅氣體之一種或多種製程氣體注入該反應腔,該真空裝置係用於將該一種或多種製程氣體從該第一位置經由該反應腔抽取至一第二位置,並在該第二位置將該一種或多種製程氣體從該反應腔排空。該些系統亦包括至少一個進出閘門,通過該閘門,一工件底材可載入該反應腔並裝載至該底材支撐結構上,以及從離開該反應腔之底材支撐結構卸載。該至少一個進出閘門所在之處遠離該第一位置,亦即該至少一個氣體注入裝置將一種或多種製程氣體注入該反應腔之位置。 In some embodiments, the present invention includes a deposition system including a reaction chamber and a substrate support structure disposed at least partially within the reaction chamber, the substrate support structure being configured to support a workpiece bottom of the reaction chamber material. The reaction chamber may be defined by a top wall, a bottom wall, and at least one side wall. The system further includes at least one gas injection device and a vacuum device for injecting one or more process gases containing at least one precursor gas into the reaction chamber at a first location, the vacuum device being used for The one or more process gases are drawn from the first location through the reaction chamber to a second location, and the one or more process gases are evacuated from the reaction chamber at the second location. The systems also include at least one access gate through which a workpiece substrate can be loaded into the reaction chamber and loaded onto the substrate support structure and unloaded from the substrate support structure exiting the reaction chamber. The at least one access gate is located away from the first position, that is, the at least one gas injection device injects one or more process gases into the reaction chamber.
在其他實施例中,本發明包含利用一沉積系統將半導體材料沉積在一工件底材上之方法。依照此等方法,一工件底材可經由至少一個進出閘門而被載入一反應腔並裝載至一底材支撐結構上。一種或多種製程氣體可經由遠離該至少一個進出閘門之至少一個氣體注入裝置流進該反應腔。該一種或多種製程氣體可包括至少一個前驅氣體。該一種或多種製程氣體可經由至少一個真空裝置而從該反應腔排空,該至少一個真空裝置位於就該底材支撐結構而言相反於該至少一個氣體注入裝置之一側。當該一種或多種製程氣體從該至少一個氣體注入裝置流向該至少一個真空裝置時,該工件底材之一表面會曝露在該一種或多種製程氣體中,且半導體材料會沉積在 該工件底材之表面。該工件底材可經由該至少一個進出閘門從該反應腔卸載出來。 In other embodiments, the invention includes a method of depositing a semiconductor material onto a workpiece substrate using a deposition system. In accordance with such methods, a workpiece substrate can be loaded into a reaction chamber via at least one access gate and loaded onto a substrate support structure. One or more process gases may flow into the reaction chamber via at least one gas injection device remote from the at least one inlet and outlet gate. The one or more process gases can include at least one precursor gas. The one or more process gases may be evacuated from the reaction chamber via at least one vacuum device located opposite one side of the at least one gas injection device with respect to the substrate support structure. When the one or more process gases flow from the at least one gas injection device to the at least one vacuum device, one surface of the workpiece substrate is exposed to the one or more process gases, and the semiconductor material is deposited The surface of the workpiece substrate. The workpiece substrate can be unloaded from the reaction chamber via the at least one access gate.
在另外之實施例中,本發明包括沉積系統之製作方法。舉例而言,形成一反應腔使之包含一頂壁、一底壁及至少一側壁。提供一底材支撐結構,使其至少局部設置在該反應腔內並支撐至少一個工件底材。將至少一個氣體注入裝置在一第一位置耦合至該反應腔。該至少一個氣體注入裝置可被組構成將含有至少一個前驅氣體之一種或多種製程氣體從該第一位置注入該反應腔。至少一個真空裝置可在一第二位置耦合至該反應腔。該至少一個真空裝置可被組構成將該一種或多種製程氣體從該第一位置經由該反應腔抽取至該第二位置,並在該第二位置將該一種或多種製程氣體從該反應腔排空。至少一個進出閘門可在遠離該第一位置之處耦合至該反應腔。該至少一個進出閘門可被組構成使一工件底材得以經由該至少一個進出閘門而載入該反應腔並裝載至該底材支撐結構上,以及從離開該反應腔之底材支撐結構卸載。 In still other embodiments, the invention includes a method of making a deposition system. For example, a reaction chamber is formed to include a top wall, a bottom wall, and at least one side wall. A substrate support structure is provided that is at least partially disposed within the reaction chamber and supports at least one workpiece substrate. At least one gas injection device is coupled to the reaction chamber at a first location. The at least one gas injection device can be configured to inject one or more process gases containing at least one precursor gas from the first location into the reaction chamber. At least one vacuum device can be coupled to the reaction chamber at a second location. The at least one vacuum device can be configured to draw the one or more process gases from the first location to the second location via the reaction chamber, and to discharge the one or more process gases from the reaction chamber at the second location air. At least one access gate can be coupled to the reaction chamber away from the first position. The at least one access gate may be configured such that a workpiece substrate is loaded into the reaction chamber via the at least one access gate and loaded onto the substrate support structure, and unloaded from the substrate support structure exiting the reaction chamber.
本說明書所提出之說明並非對於任何特定系統、元件或裝置之實際意見,而僅是用於描述本發明實施例之理想化陳述。 The descriptions of the present specification are not intended to be an actual description of any particular system, component or device, but are merely intended to describe an idealized representation of an embodiment of the invention.
在本說明書中,「三五族半導體材料」係指並包含至少主要包括元素週期表中一種或多種IIIA族元素(硼、鋁、鎵、銦、鈦)與一種或多種VA族元素(氮、磷、砷、銻、鉍)之任何半導體材料。舉例而言,三五族半導體材料包括,但不限於,氮化鎵(GaN)、磷化鎵(GaP)、砷化鎵(GaAs)、氮 化銦(InN)、磷化銦(InP)、砷化銦(InAs)、氮化鋁(AlN)、磷化鋁(AlP)、砷化鋁(AlAs)、氮化銦鎵(InGaN)、磷化銦鎵(InGaP)、氮磷化銦鎵(InGaNP)等等。 In the present specification, "three-five semiconductor materials" means and includes at least one or more elements of Group IIIA (boron, aluminum, gallium, indium, titanium) and one or more VA elements (nitrogen, mainly in the periodic table). Any semiconductor material of phosphorus, arsenic, antimony or antimony. For example, three or five semiconductor materials include, but are not limited to, gallium nitride (GaN), gallium phosphide (GaP), gallium arsenide (GaAs), and nitrogen. Indium, InP, InAs, AlN, AlP, AlAs, InGaN, Phosphorus Indium gallium (InGaP), indium gallium phosphide (InGaNP), and the like.
近來已發展出改良之氣體注入器供使用前驅物GaCl3外部來源之方法及系統採用,以將其注入反應腔,此等方法及系統如前述美國專利申請公開案號US 2009/0223442 A1所揭露者。此等氣體注入器之範例則揭露於,舉例而言,美國專利申請案號61/157,112內,該專利申請係在2009年3月3日以Arena等人之名提出,該申請之完整揭露茲以此述及方式納入本說明書。在本說明書中,氣體一詞包括氣體(不具獨立形狀或體積之流體)及蒸汽(有擴散之液態或固態物質懸浮其中之氣體),且「氣體」及「蒸汽」兩詞在本說明書中作同義詞使用。 Recently, improved gas injectors have been developed for use with methods and systems for the external source of the precursor GaCl 3 for injecting it into the reaction chamber. The methods and systems are disclosed in the aforementioned U.S. Patent Application Publication No. US 2009/0223442 A1. By. An example of such a gas injector is disclosed, for example, in U.S. Patent Application Serial No. 61/157,112, filed on March 3, 2009, in the name of This specification is incorporated into this specification. In this specification, the term gas includes gas (a fluid that does not have a separate shape or volume) and steam (a gas in which a liquid or solid substance is dispersed), and the words "gas" and "steam" are used in this specification. Synonyms are used.
本發明的實施例包含並使用之沉積系統含有一進出閘門,以將工件底材載入一反應腔以及/或將其從該反應腔卸載出來。該進出閘門所在之處遠離一種或多種製程氣體(其可包含一種或多種前驅氣體)注入該反應腔之位置。 Embodiments of the present invention include and use a deposition system that includes an access gate to load a workpiece substrate into a reaction chamber and/or to unload it from the reaction chamber. The entry and exit gates are located away from one or more process gases (which may include one or more precursor gases) into the reaction chamber.
圖1呈現一沉積系統100,其包括至少實質上封閉之一反應腔102。在一些實施例中,該沉積系統100可包含一CVD系統,並可包含一VPE沉積系統(例如一HVPE沉積系統)。 1 presents a deposition system 100 that includes at least one of the reaction chambers 102 that is substantially closed. In some embodiments, the deposition system 100 can include a CVD system and can include a VPE deposition system (eg, an HVPE deposition system).
該反應腔102可由一頂壁104、一底壁106及一個或多個側壁所界定。一個或多個側壁可由該沉積系統中次組件之一元件或多個元件所界定。舉例而言,一第一側壁108A可包含一氣體注入裝置110之一個元件,該氣體注入裝置係用於將一種或多種製程氣體注入該反應腔102,而一第二側壁108B可包含一排氣與裝載次組件112之一個元件,該排氣與裝載次組件係 用於將製程氣體排出該反應腔102,以及將底材載入該反應腔102並將底材從該反應腔102卸載出來。換句話說,該氣體注入裝置110可被組構成透過該反應腔102之第一側壁108A注入一種或多種製程氣體。 The reaction chamber 102 can be defined by a top wall 104, a bottom wall 106, and one or more side walls. One or more of the side walls may be defined by one or more elements of the secondary component of the deposition system. For example, a first sidewall 108A can include an element of a gas injection device 110 for injecting one or more process gases into the reaction chamber 102, and a second sidewall 108B can include an exhaust. And an element of the loading subassembly 112, the exhaust and loading subassembly For discharging process gas out of the reaction chamber 102, and loading the substrate into the reaction chamber 102 and unloading the substrate from the reaction chamber 102. In other words, the gas injection device 110 can be configured to inject one or more process gases through the first sidewall 108A of the reaction chamber 102.
在一些實施例中,該反應腔102可以具有伸長矩形棱柱之幾何形狀,如圖1所示。在此等實施例中,該氣體注入裝置110可位於該反應腔102之一第一端,該排氣與裝載次組件112則可位於該反應腔102之相反第二端。在其他實施例中,該反應腔102可具有其他幾何形狀。 In some embodiments, the reaction chamber 102 can have the geometry of an elongated rectangular prism, as shown in FIG. In such embodiments, the gas injection device 110 can be located at a first end of the reaction chamber 102, and the exhaust and loading subassembly 112 can be located at an opposite second end of the reaction chamber 102. In other embodiments, the reaction chamber 102 can have other geometries.
該沉積系統100包括一底材支撐結構114(例如一基座),該底材支撐結構114被組構成用於支撐一個或多個工件底材116,以在該沉積系統100內將半導體材料沉積或以其他方式提供於該些工件底材上。舉例而言,該些工件底材116可包含晶粒或晶圓。該沉積系統100更包括加熱元件118,其可用於挑選性地加熱該沉積系統100,以使該反應腔102內之平均溫度在沉積過程中可被控制在理想之增溫範圍內。該些加熱元件118可包含,舉例而言,電阻式加熱元件或輻射式加熱元件(例如加熱燈具)。 The deposition system 100 includes a substrate support structure 114 (e.g., a pedestal) that is configured to support one or more workpiece substrates 116 for depositing semiconductor material within the deposition system 100. Or otherwise provided on the workpiece substrates. For example, the workpiece substrates 116 can comprise dies or wafers. The deposition system 100 further includes a heating element 118 that can be used to selectively heat the deposition system 100 such that the average temperature within the reaction chamber 102 can be controlled within a desired temperature range during deposition. The heating elements 118 can include, for example, resistive heating elements or radiant heating elements (eg, heating lamps).
如圖1所示,該底材支撐結構114可耦合至一主軸119,該主軸可被耦合(例如直接之結構性耦合、磁性耦合等)至一驅動元件(圖中未顯示),像是一電氣馬達,該驅動元件被組構成用於驅動該主軸119之旋轉,從而使該反應腔102內之底材支撐結構114旋轉。 As shown in FIG. 1, the substrate support structure 114 can be coupled to a spindle 119 that can be coupled (eg, directly coupled, magnetically coupled, etc.) to a drive component (not shown), such as a An electric motor is configured to drive rotation of the spindle 119 to rotate the substrate support structure 114 within the reaction chamber 102.
在一些實施例中,該頂壁104、該底壁106,該底材支撐結構114、該主軸119,以及位於該反應腔102內之任何其他元件其中一個或多個可至少實質上包含一種耐火陶瓷材料,像是陶瓷氧化物(例如二氧化矽(石英)、氧化鋁、氧化鋯等等)、碳化物(例如碳化矽、碳化硼等等)、氮化物(例 如氮化矽、氮化硼等等),或覆有碳化矽之石墨。作為非限制性之一範例,該頂壁104、該底壁106、該底材支撐結構114及該主軸119可包含透明石英,以容許該些加熱元件118所輻射之熱能通過並加熱該反應腔102內之製程氣體。 In some embodiments, the top wall 104, the bottom wall 106, the substrate support structure 114, the spindle 119, and any other components located within the reaction chamber 102 may comprise at least one substantially Ceramic materials, such as ceramic oxides (such as ceria (quartz), alumina, zirconia, etc.), carbides (such as tantalum carbide, boron carbide, etc.), nitrides (eg Such as tantalum nitride, boron nitride, etc., or graphite coated with tantalum carbide. As a non-limiting example, the top wall 104, the bottom wall 106, the substrate support structure 114, and the main shaft 119 may include transparent quartz to allow the heat energy radiated by the heating elements 118 to pass through and heat the reaction chamber. Process gas in 102.
該沉積系統100更包括使製程氣體流過該反應腔102之一氣體流動系統。舉例而言,該沉積系統100可包含至少一個氣體注入裝置110,以將一種或多種製程氣體在一第一位置103A注入該反應腔102,以及一真空裝置113,以將該一種或多種製程氣體從該第一位置103A經由該反應腔102抽取至一第二位置103B,並在該第二位置103B將該一種或多種製程氣體從該反應腔102排空。該氣體注入裝置110可包含,舉例而言,一氣體注入歧管,該歧管被組構成與從製程氣體來源攜帶一種或多種製程氣體之導管耦合。 The deposition system 100 further includes a gas flow system that allows process gas to flow through the reaction chamber 102. For example, the deposition system 100 can include at least one gas injection device 110 to inject one or more process gases into the reaction chamber 102 at a first location 103A, and a vacuum device 113 to treat the one or more process gases From the first location 103A, the reaction chamber 102 is drawn to a second location 103B, and the one or more process gases are evacuated from the reaction chamber 102 at the second location 103B. The gas injection device 110 can include, for example, a gas injection manifold that is configured to couple with a conduit that carries one or more process gases from a process gas source.
繼續參考圖1,該沉積系統100可包括五個氣體流入導管120A~120E,其從個別的製程氣體來源122A~122E將氣體攜至該氣體注入裝置110。作為一個選項,氣閥(121A~121E)可用於挑選性地分別控制流過該些氣體流入導管120A~120E之氣體。 With continued reference to FIG. 1, the deposition system 100 can include five gas inflow conduits 120A-120E that carry gas from the individual process gas sources 122A-122E to the gas injection device 110. As an option, the gas valves (121A-121E) can be used to selectively control the gases flowing through the gas inflow conduits 120A-120E, respectively.
在一些實施例中,該些氣體來源122A~122E至少其中之一可以如美國專利申請公開2009/0223442 A1號所述,包含GaCl3、InCl3或AlCl3至少其中之一之外部來源。GaCl3、InCl3、AlCl3可以二聚物之形式存在,像是Ga2Cl6、In2Cl6、Al2Cl6。因此,該些氣體來源122A~122E至少其中之一可包含一種二聚物,像是Ga2Cl6、In2Cl6或Al2Cl6。 In some embodiments, the plurality of gas sources 122A ~ 122E can be at least one as U.S. Patent Application Publication No. 2009/0223442 A1 said containing GaCl 3, wherein an external source of at least one of InCl 3 or AlCl 3. GaCl 3 , InCl 3 , and AlCl 3 may exist in the form of a dimer such as Ga 2 Cl 6 , In 2 Cl 6 , and Al 2 Cl 6 . Therefore, at least one of the gas sources 122A-122E may comprise a dimer such as Ga 2 Cl 6 , In 2 Cl 6 or Al 2 Cl 6 .
在該些氣體來源122A~122E其中一個或多個為GaCl3來源或包括 GaCl3來源之實施例中,該GaCl3來源可以包含液態GaCl3之一貯存器,該液態GaCl3維持在至少100℃之溫度(例如約130℃),且該GaCl3來源可以包含用來提高該液態GaCl3蒸發率之物理方式。此種物理方式可包括,舉例而言,被組構成攪動該液態GaCl3之一裝置、被組構成噴灑該液態GaCl3之一裝置、被組構成使載體氣體快速流過該液態GaCl3上方之一裝置、被組構成使載體氣體起泡通過該液態GaCl3之一裝置、被組構成以超音波方式散佈該液態GaCl3之一裝置,例如一壓電裝置,以及諸如此類者。作為非限定性質之一範例,當該液態GaCl3維持在至少100℃之溫度時,可以使一種載體氣體,例如He、N2、H2或Ar,起泡通過該液態GaCl3,這樣,該來源氣體便可包含運送前驅氣體之一種或多種載體氣體。 In the plurality of gas sources 122A ~ 122E wherein the one or more sources of GaCl 3 or GaCl 3 comprises a source of embodiments, the source may comprise a liquid GaCl 3 GaCl one reservoir 3, GaCl 3 the liquid is maintained at at least 100 ℃ The temperature (e.g., about 130 ° C), and the source of GaCl 3 may comprise a physical means for increasing the evaporation rate of the liquid GaCl 3 . Such physical means may include, for example, a device configured to agitate the liquid GaCl 3 , a device configured to spray the liquid GaCl 3 , and configured to rapidly flow the carrier gas over the liquid GaCl 3 . A device, a device configured to foam a carrier gas through the liquid GaCl 3 , and a device configured to superimpose the liquid GaCl 3 in an ultrasonic manner, such as a piezoelectric device, and the like. As an example of a non-limiting property, when the liquid GaCl 3 is maintained at a temperature of at least 100 ° C, a carrier gas such as He, N 2 , H 2 or Ar may be bubbled through the liquid GaCl 3 such that The source gas may comprise one or more carrier gases that carry the precursor gas.
在本發明之一些實施例中,前驅氣體(例如GaCl3)蒸汽進入該些氣體流入導管120A~120E其中一個或多個之通量(flux)可受到控制。舉例而言,在實施例中,當一種載體氣體起泡通過液態GaCl3時,來自該些氣體來源122A~122E之GaCl3通量取決於一個或多個因素,包括,舉例而言,該GaCl3之溫度、該GaCl3上方之壓力,以及起泡通過該GaCl3之載體氣體流量。雖然GaCl3之質量通量(mass flux)原則上可受前述任何參數所控制,但在一些實施例中,可以使用一質量流量控制器改變載體氣體之流量而使該GaCl3之質量通量受到控制。 In some embodiments of the present invention, the precursor gas (e.g., GaCl 3) steam enters 120A ~ 120E wherein one or more of the plurality of flux of the gas inflow conduit (Flux) may be controlled. For example, in an embodiment, when a carrier gas is bubbled through the liquid GaCl 3 , the GaCl 3 flux from the gas sources 122A-122E depends on one or more factors including, for example, the GaCl 3 of the temperature, the pressure of GaCl3 3 above, and the bubbling of the carrier gas flow GaCl3 through 3. Although the mass flux of GaCl 3 can in principle be controlled by any of the foregoing parameters, in some embodiments, a mass flow controller can be used to vary the flow of the carrier gas to subject the mass flux of the GaCl 3 to control.
在一些實施例中,該些氣體來源122A~122E其中一個或多個可保存約25公斤或更多的GaCl3,、約35公斤或更多的GaCl3,或甚至50公斤或更多的GaCl3。舉例而言,該GaCl3來源可保存介於大約50及100公斤間之GaCl3(例如介於大約60及70公斤之間)。此外,多個GaCl3來源可利用 歧管連接在一起而形成單一之氣體來源122A~122E,以允許從一個氣體來源切換到另一氣體來源而無須中斷該沉積系統100之操作以及/或使用。在該沉積系統100維持運轉的情況下,用磬的氣體來源可予以移除,並以新的、裝滿的氣體來源替換之。 In some embodiments, the plurality of gas sources 122A ~ 122E wherein the one or more can be stored for about 25 kilograms or more GaCl 3 ,, about 35 kilograms or more. 3 GaCl, or even 50 kg or more GaCl 3 . For example, the GaCl 3 source can hold between about 50 and 100 kilograms of GaCl 3 (eg, between about 60 and 70 kilograms). In addition, multiple sources of GaCl 3 may be connected together using manifolds to form a single gas source 122A-122E to allow switching from one gas source to another without disrupting the operation and/or use of the deposition system 100. Where the deposition system 100 is maintained, the source of gas from the crucible can be removed and replaced with a new, full source of gas.
在一些實施例中,該些氣體流入導管120A~120E的溫度可控制在介於該些氣體來源122A~122E之溫度及該反應腔102之溫度間。該些氣體流入導管120A~120E及相關質量通量感測器、控制器等等之溫度可由該些氣體來源122A~122E個別出口處之一第一溫度(例如約100℃或更高)逐漸上升至該反應腔102入口處之一第二溫度(例如約150℃或更低),以避免該些氣體(例如GaCl3蒸氣)在該些氣體流入導管120A~120E內凝結。作為一個選項,介於該些氣體來源122A~122E與該反應腔102間之個別氣體流入導管120A~120E之長度可以為大約3英尺或更短、大約2英尺或更短,或甚至大約1英尺或更短。該些來源氣體的壓力可利用一種或多種壓力控制系統加以控制。 In some embodiments, the temperature of the gas inflow conduits 120A-120E can be controlled between the temperatures of the gas sources 122A-122E and the temperature of the reaction chamber 102. The temperatures of the gas inflow conduits 120A-120E and associated mass flux sensors, controllers, etc. may be gradually increased by a first temperature (e.g., about 100 ° C or higher) at one of the individual outlets of the gas sources 122A-122E. A second temperature (e.g., about 150 ° C or lower) to the inlet of the reaction chamber 102 prevents the gases (e.g., GaCl 3 vapor) from condensing within the gas inflow conduits 120A - 120E. As an option, the individual gas inflow conduits 120A-120E between the gas sources 122A-122E and the reaction chamber 102 can be about 3 feet or less, about 2 feet or less, or even about 1 foot in length. Or shorter. The pressure of the source gases can be controlled using one or more pressure control systems.
在其他實施例中,該沉積系統100可包括少於五個(例如一個到四個)氣體流入導管及其個別之氣體來源,或者,該沉積系統100可包括多於五個(例如六個、七個等等)氣體流入導管及其個別之氣體來源。 In other embodiments, the deposition system 100 can include less than five (eg, one to four) gas inflow conduits and their individual gas sources, or the deposition system 100 can include more than five (eg, six, Seven, etc.) gas flows into the conduit and its individual gas sources.
該些氣體流入導管120A~120E其中一個或多個延伸至該氣體注入裝置110。該氣體注入裝置110可包含一個或多個材料塊,讓該些製程氣體經由該些材料塊運進該反應腔102。一個或多個冷卻導管111可延伸穿過該些材料塊。一冷卻流體可流過該一個或多個冷卻導管111,以在該沉積系統100操作期間,將經由該些氣體流入導管120A~120E而流過該氣體注入裝 置110的氣體維持在理想的溫度範圍內。舉例而言,在該沉積系統操作期間,最好將經由該些氣體流入導管120A~120E而流過該氣體注入裝置110之氣體維持在低於約200℃之溫度(例如約150℃)。 One or more of the gas inflow conduits 120A-120E extend to the gas injection device 110. The gas injection device 110 can include one or more blocks of material that are transported into the reaction chamber 102 via the blocks of material. One or more cooling conduits 111 can extend through the blocks of material. A cooling fluid can flow through the one or more cooling conduits 111 to flow through the gas injection conduits 120A-120E during operation of the deposition system 100. The gas at 110 is maintained within a desired temperature range. For example, during operation of the deposition system, the gas flowing through the gas injection devices 110 via the gas inflow conduits 120A-120E is preferably maintained at a temperature below about 200 °C (eg, about 150 °C).
圖2為該氣體注入裝置110之一外部表面之透視圖。如圖8所示,該氣體注入裝置110可包含多個連接器117,該些連接器117被組構成連接至該些氣體流入導管120A~120E。在一些實施例中,該氣體注入裝置110可包含該些連接器117之多列115A~115E。該些列115A~115E中的每一列皆可被組構成將個別的製程氣體注入該反應腔102。舉例而言,底部第一列115A之連接器117可用於將一種沖淨氣體注入該反應腔102,第二列115B之連接器117可用於將一種前驅氣體(例如GaCl3)注入該反應腔102,第三列115C之連接器117可用於將另一種前驅氣體(例如NH3)注入該反應腔102,第四列115D之連接器117可用於將另一種製程氣體(例如SiH4)注入該反應腔102,頂部第五列115E之連接器117則可用於將一種沖淨氣體或載體氣體(例如N2)注入該反應腔102。該些連接器117可區分為不同區119A~119C之連接器117,每一區119A~119C皆包括來自每一列115A~115E的連接器117。每一區119A~119C之連接器117可用於將製程氣體傳送至該反應腔102內的不同區域,從而將不同之製程氣體組成及/或濃度引入該反應腔102內該些工件底材116上方之不同區域。 2 is a perspective view of an outer surface of one of the gas injection devices 110. As shown in FIG. 8, the gas injection device 110 can include a plurality of connectors 117 that are configured to be coupled to the gas inflow conduits 120A-120E. In some embodiments, the gas injection device 110 can include a plurality of columns 115A-115E of the connectors 117. Each of the columns 115A-115E can be grouped to inject individual process gases into the reaction chamber 102. For example, the connector 117 of the bottom first column 115A can be used to inject a flush gas into the reaction chamber 102, and the connector 117 of the second column 115B can be used to inject a precursor gas (eg, GaCl 3 ) into the reaction chamber 102. , column 115C of the third connector 117 can be used to another precursor gas (e.g. NH 3) is injected into the reaction chamber 102, the fourth column 117 of the connector 115D may be used to further process gas (e.g., SiH 4) is injected into the reaction chamber 102, the fifth column 115E of the header connector 117 can be used to rinse one kind of gas or a carrier gas (e.g. N 2) is injected into the reaction chamber 102. The connectors 117 can be divided into connectors 117 of different zones 119A-119C, and each zone 119A-119C includes a connector 117 from each column 115A-115E. The connectors 117 of each of the zones 119A-119C can be used to transfer process gases to different regions within the reaction chamber 102 to introduce different process gas compositions and/or concentrations into the reaction chamber 102 above the workpiece substrates 116. Different areas.
再參照圖1,該排氣與裝載次組件112可包含一真空室184,讓流經該反應腔102之氣體受到真空所吸取而從該反應腔102排出。該真空室184內之真空係由該真空裝置113產生。如圖1所示,該真空室184可位於該反應腔102下方。 Referring again to FIG. 1, the exhaust and loading subassembly 112 can include a vacuum chamber 184 that allows gas flowing through the reaction chamber 102 to be drawn from the reaction chamber 102 by vacuum. The vacuum in the vacuum chamber 184 is generated by the vacuum device 113. As shown in FIG. 1, the vacuum chamber 184 can be located below the reaction chamber 102.
該排氣與裝載次組件112更包含一沖淨氣體簾裝置184,該沖淨氣體簾裝置被組構及定向成用於提供大致為平面簾幕之一流動沖淨氣體,該流動沖淨氣體從該沖淨氣體簾裝置184流出並流進該真空室184。該排氣與裝載次組件112亦可包括一進出閘門188,其可挑選性地開啟以從該底材支撐結構114載入及/或卸載該些工件底材116,並可挑選性地關閉以利用該沉積系統100處理該些工件底材116。在一些實施例中,該進出閘門188可包含至少一個板體,該至少一個板體被組構成在閉合之一第一位置與開啟之一第二位置間移動。該進出閘門188可延伸穿過該反應腔102之一側壁,該側壁係遠離注入該一種或多種製程氣體所穿過之側壁。 The exhaust and loading subassembly 112 further includes a flush gas curtain assembly 184 that is configured and oriented to provide a flow of flushing gas that is substantially a planar curtain. From the flushing gas curtain device 184, it flows out and flows into the vacuum chamber 184. The exhaust and loading subassembly 112 can also include an access gate 188 that can be selectively opened to load and/or unload the workpiece substrates 116 from the substrate support structure 114 and can be selectively closed to The workpiece substrates 116 are processed using the deposition system 100. In some embodiments, the access gate 188 can include at least one panel that is configured to move between a first position of the closure and a second position of the closure. The access gate 188 can extend through a sidewall of the reaction chamber 102 that is remote from the sidewall through which the one or more process gases are injected.
該反應腔102至少實質上是封閉的,當該進出閘門188之板體處於閉合之第一位置時,無法經由該進出閘門188接觸到該底材支撐結構114。當該進出閘門188之板體處於開啟之第二位置時,則可經由該進出閘門188接觸到該底材支撐結構114。 The reaction chamber 102 is at least substantially closed, and the substrate support structure 114 cannot be accessed via the access gate 188 when the plate of the access gate 188 is in the closed first position. When the plate of the access gate 188 is in the second position of opening, the substrate support structure 114 can be accessed via the access gate 188.
由該沖淨氣體簾裝置184發出之沖淨氣體簾可在裝載及/或卸載工件底材116期間減少或防止氣體從該反應腔102逸出。 The flushing gas curtain emitted by the flushing gas curtain device 184 can reduce or prevent gas from escaping from the reaction chamber 102 during loading and/or unloading of the workpiece substrate 116.
氣體副產物、載體氣體及任何過量之前驅氣體可經由該排氣與裝載次組件112從該反應腔102排出。 Gas byproducts, carrier gas, and any excess precursor gases may be withdrawn from the reaction chamber 102 via the exhaust and loading subassembly 112.
該進出閘門188所在之處可遠離一種或多種製程氣體被注入該反應腔102之第一位置103A。在一些實施例中,該第一位置103A可設置在該底材支撐結構114之一第一側,而該第二位置103B,即製程氣體經由該真空裝置113從該反應腔102排出之位置,則可設置在該底材支撐結構114之相反第二側,如圖1所示。不僅如此,製程氣體從該反應腔102排出之第 二位置103B更可設置在該底材支撐結構114及該進出閘門188之間。如前所述,該沖淨氣體簾裝置186可被組構成用於形成一流動沖淨氣體簾,使之在該沖淨氣體注入裝置與該真空裝置113間流動。該流動沖淨氣體簾可設置在該工件支撐結構114與該進出閘門188之間,以形成將該些工件底材116與該進出閘門188隔開之流動沖淨氣體障壁。此種流動沖淨氣體障壁可在該進出閘門188開啟時減少或防止製程氣體從該反應腔102散逸。 The access gate 188 can be injected into the first location 103A of the reaction chamber 102 away from one or more process gases. In some embodiments, the first position 103A can be disposed on a first side of the substrate support structure 114, and the second position 103B, that is, a position at which the process gas is discharged from the reaction chamber 102 via the vacuum device 113, It can then be placed on the opposite second side of the substrate support structure 114, as shown in FIG. Moreover, the process gas is discharged from the reaction chamber 102. The second position 103B can be disposed between the substrate support structure 114 and the access gate 188. As previously described, the purge gas curtain assembly 186 can be configured to form a flow purge gas curtain for flow between the purge gas injection device and the vacuum device 113. The flow purge gas curtain may be disposed between the workpiece support structure 114 and the access gate 188 to form a flow purge gas barrier separating the workpiece substrate 116 from the inlet and outlet gates 188. Such a flow flushing gas barrier can reduce or prevent process gases from escaping from the reaction chamber 102 when the inlet and outlet gates 188 are open.
在一些實施例中,該氣體注入系統110可包括至少一個內部前驅氣體爐130,其係設置在該反應腔102內。該內部前驅氣體爐130可被組構成用於加熱至少一個前驅氣體,並將該反應腔102內之該至少一個前驅氣體從該氣體注入裝置110運送至接近該底材支撐結構114之一位置。 In some embodiments, the gas injection system 110 can include at least one internal precursor gas furnace 130 disposed within the reaction chamber 102. The internal precursor gas furnace 130 can be configured to heat at least one precursor gas and transport the at least one precursor gas within the reaction chamber 102 from the gas injection device 110 to a location proximate to the substrate support structure 114.
圖3為圖1之前驅氣體爐130之側截面圖。圖1與圖2實施例之前驅氣體爐130包含五個大致為板狀之結構132A~132E,該些板狀結構彼此附著在一起,且其尺寸及組構係為了定義出一個或多個前驅氣體流動路徑,該些流動路徑在該些大致為板狀之結構132A~132E間所定義出之腔室中穿過該氣體爐130。舉例而言,該些大致為板狀之結構132A~132E可包含透明石英,以容許該些加熱元件118所發出之輻射能量穿過該些結構132A~132E並加熱該氣體爐130內之前驅氣體。 Figure 3 is a side cross-sectional view of the gas flooding furnace 130 of Figure 1 . The gas flooding furnace 130 of the embodiment of Figures 1 and 2 comprises five substantially plate-like structures 132A-132E which are attached to each other and whose size and configuration are used to define one or more precursors. Gas flow paths that pass through the gas furnace 130 in a chamber defined between the generally plate-like structures 132A-132E. For example, the substantially plate-like structures 132A-132E may include transparent quartz to allow the radiant energy emitted by the heating elements 118 to pass through the structures 132A-132E and heat the gas in the gas furnace 130. .
如圖3所示,該第一板狀結構132A及該第二板狀結構132B可被耦合在一起而在兩者間定義出一腔室134。該第一板狀結構132A上之多個組成脊狀凸起136可將該腔室134再分割為一個或多個流動路徑,其從進入該腔室134之一入口138延伸至離開該腔室134之一出口140。 As shown in FIG. 3, the first plate-like structure 132A and the second plate-like structure 132B can be coupled together to define a chamber 134 therebetween. The plurality of constituent ridges 136 on the first plate-like structure 132A can subdivide the chamber 134 into one or more flow paths that extend from the inlet 138 into one of the chambers 134 to exit the chamber One of the outlets 134 is 140.
圖4為該第一板狀結構132之俯視圖,其呈現出該結構之脊狀凸起 136,以及由該結構於該腔室134內所定義出之流動路徑。如圖4所示,該些凸起136定義出穿過該氣體爐130(圖3),具有盤繞組構之流動路徑之區段。該些凸起136可包含交替排列之壁,該些壁在該些凸起136之側端以及中央具有貫穿該些凸起136之開口138,如圖4所示。故在此組構中,氣體可如圖4所示,從接近該腔室134之中央區域處進入該腔室134,向外朝該氣體爐130之側邊流動,在其中一個凸起136之側端穿過開口138,往回朝該腔室134之中央區域流去,然後在另一凸起136之中央穿過另一縫隙138。此一流動型態會重複,直到該些氣體以盤繞方式在該腔室134內來回流動後到達就該板體132A而言相反於該入口138之另一側為止。 4 is a top plan view of the first plate-like structure 132 showing the ridge-like protrusion of the structure 136, and a flow path defined by the structure within the chamber 134. As shown in Figure 4, the projections 136 define a section through the gas furnace 130 (Fig. 3) having a flow path for the coil winding configuration. The protrusions 136 may include alternately arranged walls having openings 138 extending through the protrusions 136 at the side ends and at the center of the protrusions 136, as shown in FIG. Therefore, in this configuration, the gas can enter the chamber 134 from a central region near the chamber 134 as shown in FIG. 4, and flow outward toward the side of the gas furnace 130, with one of the protrusions 136 The side end passes through the opening 138, flows back toward the central region of the chamber 134, and then passes through the other slit 138 in the center of the other projection 136. This flow pattern is repeated until the gases flow back and forth within the chamber 134 in a coiled manner to the opposite side of the inlet 138 from the plate 132A.
藉由造成一個或多個前驅氣體流經穿過該氣體爐130之流動路徑之此一區段,因而得以挑選性地增加該一個或多個前驅氣體在該氣體爐130內之滯留時間。 By causing one or more precursor gases to flow through this section of the flow path through the gas furnace 130, the residence time of the one or more precursor gases within the gas furnace 130 can be selectively increased.
再參照圖1,通向該腔室134之入口138,舉例而言,可由一管狀構件142所界定。該些氣體流入導管120A~120E其中之一,例如該氣體流入導管120B,可延伸至該管狀構件142並與其耦合,如圖1所示。一密封構件144,像是聚合物O型環,可用於在該氣體流入導管120B及該管狀構件142間形成氣密之封口。舉例而言,該管狀構件142可包含不透明石英材料,以防止該密封構件144因該些加熱元件118所發出之熱能而受熱增溫,造成該密封構件144劣化。此外,利用冷卻流體流過該些冷卻導管111冷卻該氣體注入裝置110可防止過度加熱並避免造成該密封構件144劣化。當該氣體流入導管包含一種金屬或金屬合金(例如鋼)且該管狀構件142包含諸如石英之一種耐火材料時,將該密封構件144之溫度維持在大約200℃ 以下,便可在該些氣體流入導管120A~120E其中之一與該管狀構件142間利用該密封構件144維持充分之密封。該管狀構件142及該第一板狀結構132A可接合在一起以形成單一且整合之石英體。 Referring again to FIG. 1, an inlet 138 leading to the chamber 134, for example, may be defined by a tubular member 142. The gas flows into one of the conduits 120A-120E, such as the gas inflow conduit 120B, which can extend to and couple with the tubular member 142, as shown in FIG. A sealing member 144, such as a polymeric O-ring, can be used to form a hermetic seal between the gas inflow conduit 120B and the tubular member 142. For example, the tubular member 142 can include an opaque quartz material to prevent the sealing member 144 from being thermally warmed by the thermal energy emitted by the heating elements 118, causing the sealing member 144 to deteriorate. Further, cooling the gas injection device 110 by the cooling fluid flowing through the cooling ducts 111 prevents excessive heating and avoids deterioration of the sealing member 144. When the gas inflow conduit comprises a metal or metal alloy (e.g., steel) and the tubular member 142 comprises a refractory material such as quartz, the temperature of the sealing member 144 is maintained at about 200 °C. Hereinafter, a sufficient seal can be maintained between the one of the gas inflow conduits 120A to 120E and the tubular member 142 by the sealing member 144. The tubular member 142 and the first plate-like structure 132A can be joined together to form a single and integrated quartz body.
如圖2和圖3所示,該些板狀結構132A、132B可包含輔助密封部分147A、147B(例如一脊部及對應之一凹槽),其沿著該些板狀結構132A、132B之外圍延展,並至少在實質上將介於該些板狀結構132A、132B間之腔室134密封住。這樣,該腔室134內之氣體便無法從側向流出該腔室134,而會被迫從該腔室134流過該出口140(圖3)。 As shown in FIGS. 2 and 3, the plate-like structures 132A, 132B may include auxiliary sealing portions 147A, 147B (eg, a ridge portion and a corresponding one of the grooves) along the plate-like structures 132A, 132B. The periphery extends and at least substantially seals the chamber 134 between the plate-like structures 132A, 132B. Thus, gas within the chamber 134 cannot flow laterally out of the chamber 134 and will be forced to flow from the chamber 134 through the outlet 140 (Fig. 3).
作為一個選項,該些凸起136可被組構成具有一高度,該高度稍微小於該些凸起136所在之第一板狀結構132A之表面152與該第二板狀結構132B之相對表面154間之距離。這樣,在該些凸起136及該第二板狀結構132B之表面154間便會有一小間隙。雖然少量氣體可能會經由這些間隙漏出,但是此少量漏出不會對前驅氣體分子在該腔室134內之平均滯留時間造成不利影響。以此方式組構該些凸起136,則製造該些板狀結構132A、132B過程中因公差所造成該些凸起136之高度差異便有所解釋,這樣即使所製作之該些凸起136偶然高度過高,也不至於影響該些輔助密封部分147A、147B在該些板狀結構132A、132B間形成之充分密封。 As an option, the protrusions 136 can be grouped to have a height that is slightly smaller than the surface 152 of the first plate-like structure 132A where the protrusions 136 are located and the opposite surface 154 of the second plate-like structure 132B. The distance. Thus, there is a small gap between the protrusions 136 and the surface 154 of the second plate-like structure 132B. Although a small amount of gas may leak through these gaps, this small amount of leakage does not adversely affect the average residence time of the precursor gas molecules within the chamber 134. By arranging the protrusions 136 in this manner, the height difference of the protrusions 136 caused by the tolerances during the manufacture of the plate-like structures 132A, 132B is explained, even if the protrusions 136 are formed. The accidental height is too high to affect the adequate sealing of the auxiliary sealing portions 147A, 147B between the plate-like structures 132A, 132B.
如圖3所示,介於該些板狀結構132A、132B間之腔室134之出口140會通向該第三板狀結構132C及該第四板狀結構132D間之一腔室150之入口148。該腔室150可被組構成讓其中之氣體以大致為線性之方式從該入口148流向該出口156。舉例而言,該腔室150所具有之截面形狀可以大致為長方形並在該入口148與該出口156間有一致之尺寸。這樣,該腔室150 便可被組構成使氣體以層流而非紊流之方式流動。 As shown in FIG. 3, the outlet 140 of the chamber 134 between the plate-like structures 132A, 132B leads to the entrance of the chamber 150 between the third plate-like structure 132C and the fourth plate-like structure 132D. 148. The chamber 150 can be configured such that gas therein flows from the inlet 148 to the outlet 156 in a substantially linear manner. For example, the chamber 150 can have a cross-sectional shape that is generally rectangular and has a uniform size between the inlet 148 and the outlet 156. Thus, the chamber 150 It can be grouped to allow the gas to flow in a laminar flow rather than a turbulent flow.
該些板狀結構132C、132D可包括輔助密封部分158A、158B(例如一脊部及對應之一凹槽),其沿著該些板狀結構132C、132D之外圍延展,並至少在實質上將介於該些板狀結構132C、132D間之腔室150密封住。這樣,該腔室150內之氣體便無法從側向流出該腔室150,而會被迫從該腔室150流過該出口156。 The plate-like structures 132C, 132D may include auxiliary sealing portions 158A, 158B (eg, a ridge and a corresponding one of the grooves) extending along the periphery of the plate-like structures 132C, 132D, and at least substantially The chamber 150 between the plate-like structures 132C, 132D is sealed. Thus, gas within the chamber 150 cannot flow laterally out of the chamber 150 and will be forced to flow from the chamber 150 through the outlet 156.
該出口156可包含諸如一細長之縫隙(例如狹縫),其在就該板狀結構132D而言相反於靠近該入口148之一端穿過該板狀結構132D。 The outlet 156 can include an elongated slit (e.g., a slit) that passes through the plate-like structure 132D opposite the one end of the inlet 148 with respect to the plate-like structure 132D.
繼續參考圖3,介於該些板狀結構132C、132D間之腔室150之出口156會通向該第四板狀結構132D與該第五板狀結構132E間之一腔室162之入口160。該腔室162可被組構成讓其中之氣體以大致為線性之方式從該入口160流向該出口164。舉例而言,該腔室162所具有之截面形狀可以大致為長方形並在該入口160與該出口164間有一致之尺寸。這樣,該腔室162便可被組構成使氣體以層流而非紊流之方式流動,如同前文參照該腔室150所述之方式。 With continued reference to FIG. 3, the outlet 156 of the chamber 150 between the plate-like structures 132C, 132D leads to the inlet 160 of the chamber 162 between the fourth plate-like structure 132D and the fifth plate-like structure 132E. . The chamber 162 can be configured such that gas therein flows from the inlet 160 to the outlet 164 in a substantially linear manner. For example, the chamber 162 can have a cross-sectional shape that is generally rectangular and has a uniform size between the inlet 160 and the outlet 164. Thus, the chambers 162 can be configured to flow in a laminar, rather than turbulent, manner as previously described with reference to the chamber 150.
該些板狀結構132D、132E可包括輔助密封部分166A、166B(例如一脊部及對應之一凹槽),其沿著該些板狀結構132D、132E之外圍延展,且除該些板狀結構132D、132E之一側外,該些輔助密封部分將介於該些板狀結構132D、132E間之腔室162密封住。介於該些板狀結構132D、132E間且相反於該入口160之一側有一間隙,該間隙定義出該腔室162之出口164。這樣,氣體便會經由該入口160進入該腔室162,流經該腔室162往該出口164流去(因為該些輔助密封部分166A、166B的關係所以不會從側 向流出該腔室162),並從該出口164流出該腔室162。在該氣體爐130內,由該腔室150及該腔室162定義出之氣體流動路徑之該些區段係被組構成使一個或多個前驅氣體在流經該氣體爐130內之流動路徑時以層流方式流動,並減少該些區段內之紊流。 The plate-like structures 132D, 132E may include auxiliary sealing portions 166A, 166B (eg, a ridge and a corresponding one of the grooves) extending along the periphery of the plate-like structures 132D, 132E, and in addition to the plate-like shapes Out of one side of the structures 132D, 132E, the auxiliary sealing portions seal the chamber 162 between the plate-like structures 132D, 132E. There is a gap between the plate-like structures 132D, 132E and opposite one side of the inlet 160, the gap defining an outlet 164 of the chamber 162. Thus, the gas enters the chamber 162 through the inlet 160, and flows through the chamber 162 to the outlet 164 (because of the relationship of the auxiliary sealing portions 166A, 166B, it does not from the side The chamber 162) flows out of the chamber and exits the chamber 162 from the outlet 164. Within the gas furnace 130, the sections of the gas flow path defined by the chamber 150 and the chamber 162 are grouped to form a flow path for one or more precursor gases to flow through the gas furnace 130. It flows in a laminar flow and reduces turbulence in the sections.
該出口164被組構成將來自該氣體爐130之一個或多個前驅氣體輸出到該反應腔102之內部區域。圖5為該氣體爐130之透視圖,其呈現了該出口164。如圖5所示,該出口164可具有長方形之截面形狀,此種截面形狀有助保持該氣體爐130所注出之前驅氣體以層流方式流進該反應腔102之內部區域。該出口164之尺寸及組構係為了往該底材支撐結構114之一上表面168上方橫向輸出一片流動之前驅氣體。如圖5所示,該第四板狀結構132D之端面180及該第五板狀結構132E之端面182間之一間隙如前所述,定義出該腔室162之出口164,該出口所具有之形狀通常會配合該底材支撐結構114所支撐之一工件底材116之形狀,而利用從該氣體爐130流出之前驅氣體可將一種材料沉積在該工件底材116上。舉例而言,在實施例中,當一工件底材116包含外圍大致為圓形之晶粒或晶圓時,該些端面180、182可具有大致與待處理工件底材116之外圍輪廓相配合之弧形。在此種組構中,該出口164任一處與該工件底材116外緣間之距離大致不變。此種組構可防止該出口164所流出之前驅氣體在尚未接近所要沉積材料之工件底材116之表面前,便與該反應腔102內其他前驅氣體混合,同時可避免在該沉積系統100之元件上發生不必要之材料沉積。 The outlet 164 is configured to output one or more precursor gases from the gas furnace 130 to an interior region of the reaction chamber 102. FIG. 5 is a perspective view of the gas furnace 130 showing the outlet 164. As shown in FIG. 5, the outlet 164 may have a rectangular cross-sectional shape that helps maintain the gas flow from the gas furnace 130 into the inner region of the reaction chamber 102 in a laminar flow. The outlet 164 is sized and configured to laterally output a flow of precursor gas above the upper surface 168 of one of the substrate support structures 114. As shown in FIG. 5, a gap between the end surface 180 of the fourth plate-like structure 132D and the end surface 182 of the fifth plate-like structure 132E is as defined above, and an outlet 164 of the chamber 162 is defined. The shape will generally match the shape of one of the workpiece substrates 116 supported by the substrate support structure 114, and a material can be deposited on the workpiece substrate 116 by the gas flowing out of the gas furnace 130. For example, in an embodiment, when a workpiece substrate 116 includes substantially peripherally shaped dies or wafers, the end surfaces 180, 182 can have substantially the outer contour of the workpiece substrate 116 to be processed. The arc shape. In such a configuration, the distance between any of the outlets 164 and the outer edge of the workpiece substrate 116 is substantially constant. Such a configuration prevents pre-exhaustion of the outlet 164 from mixing with other precursor gases in the reaction chamber 102 before it is near the surface of the workpiece substrate 116 of the material to be deposited, while avoiding contamination in the deposition system 100. Unnecessary material deposition occurs on the component.
再參照圖1,該沉積系統100可包括加熱元件118。加熱元件118可包括電阻加熱器、感應加熱器或輻射加熱器。在某些實施例中,該些加熱元 件118包含被組構成用於輻射紅外線熱能之加熱燈具。舉例而言,該些加熱元件118可包含第一組加熱元件170及第二組加熱元件172。該些加熱元件118之第一組170之所在位置及組構使其可向該氣體爐130提供輻射能並加熱爐中之前驅氣體。舉例而言,該些加熱元件118之第一組170可設置在該反應腔102下面,該氣體爐130底下,如圖1所示。在其他實施例中,該些加熱元件118之第一組170可設置在該反應腔102上面,該氣體爐130上方,或者,該些加熱元件118之第一組170可同時包括位於該氣體爐130底下及該氣體爐130上方之該些加熱元件118。該些加熱元件118之第二組172之所在位置及組構使其可向該底材支撐結構114及支撐於其上之任何工件底材提供熱能。舉例而言,該些加熱元件118之第二組172可設置在該反應腔102下面,該底材支撐結構114底下,如圖1所示。在其他實施例中,該些加熱元件118之第二組172可設置在該反應腔102上面,該底材支撐結構114上方,或者,該些加熱元件118之第二組172可同時包括位於該底材支撐結構114底下及該底材支撐結構114上方之該些加熱元件118。 Referring again to FIG. 1, the deposition system 100 can include a heating element 118. Heating element 118 can include a resistive heater, an induction heater, or a radiant heater. In some embodiments, the heating elements Piece 118 includes a heating fixture that is configured to radiate infrared thermal energy. For example, the heating elements 118 can include a first set of heating elements 170 and a second set of heating elements 172. The first set 170 of heater elements 118 is positioned and configured to provide radiant energy to the gas furnace 130 and to heat the gas in the furnace. For example, the first set 170 of heating elements 118 can be disposed under the reaction chamber 102, under the gas furnace 130, as shown in FIG. In other embodiments, the first group 170 of the heating elements 118 may be disposed on the reaction chamber 102, above the gas furnace 130, or the first group 170 of the heating elements 118 may be included in the gas furnace at the same time. The heating elements 118 are under the 130 and above the gas furnace 130. The second set 172 of the plurality of heating elements 118 is positioned and configured to provide thermal energy to the substrate support structure 114 and any workpiece substrates supported thereon. For example, a second set 172 of the heating elements 118 can be disposed under the reaction chamber 102 underneath the substrate support structure 114, as shown in FIG. In other embodiments, the second set 172 of the heating elements 118 can be disposed above the reaction chamber 102, above the substrate support structure 114, or the second set 172 of the heating elements 118 can be included at the same time. The heating elements 118 are beneath the substrate support structure 114 and above the substrate support structure 114.
該些加熱元件118之第一組170及該些加熱元件118之第二組172可以用熱反射或熱絕緣之一障壁174加以分隔。作為非限制性質之範例,此種障壁174可包含位於該些加熱元件118之第一組170與該些加熱元件118之第二組172間之一鍍金金屬板。該金屬板之方位可允許該氣體爐130之加熱(由該些加熱元件118之第一組170加熱)及該底材支撐結構114之加熱(由該些加熱元件118之第一組172加熱)受到獨立之控制。換句話說,該障壁174之位置及方向,係為了減少或防止該些加熱元件118之第 一組170加熱該底材支撐結構114,及減少或防止該些加熱元件118之第一組172加熱該氣體爐130。 The first set 170 of heater elements 118 and the second set 172 of heater elements 118 may be separated by a heat shield or thermal insulation barrier 174. As an example of non-limiting properties, such barrier 174 can include a gold plated metal plate between the first set 170 of heating elements 118 and the second set 172 of the heating elements 118. The orientation of the metal sheet allows heating of the gas furnace 130 (heated by the first set 170 of heating elements 118) and heating of the substrate support structure 114 (heated by the first set 172 of the heating elements 118) Subject to independence. In other words, the position and orientation of the barrier 174 is to reduce or prevent the heating element 118. A set 170 heats the substrate support structure 114 and reduces or prevents the first set 172 of the heating elements 118 from heating the gas furnace 130.
該些加熱元件118之第一組170可包含多列之加熱元件118,各列間可獨立控制。換句話說,每一列加熱元件118所發出之熱能可受到獨立控制。該些加熱元件列之方位可以與氣體淨流通過該反應腔102之方向垂直之橫向方向,從圖1之觀點而言為由左到右之方向。這樣,如有需要,受到獨立控制之各列加熱元件118便可用於在該氣體爐130中提供選定之一熱梯度。同樣地,該些加熱元件118之第二組172亦可包含多列之加熱元件118,各列間可獨立控制。這樣,如有需要,在該底材支撐結構114中亦可提供選定之一熱梯度。 The first set 170 of heater elements 118 can include a plurality of rows of heating elements 118 that can be independently controlled between the columns. In other words, the thermal energy emitted by each column of heating elements 118 can be independently controlled. The orientation of the rows of heating elements may be in a transverse direction perpendicular to the direction in which the gas flows through the reaction chamber 102, from the perspective of Figure 1 from left to right. Thus, if desired, each column of heating elements 118 that are independently controlled can be used to provide a selected one of the thermal gradients in the gas furnace 130. Similarly, the second set 172 of heater elements 118 can also include multiple rows of heating elements 118 that can be independently controlled between the columns. Thus, a selected one of the thermal gradients can also be provided in the substrate support structure 114 if desired.
作為一個選項,被動傳熱構造(例如,包含表現類似一黑體之材料之構造)可以安置在緊鄰或接近該反應腔102內之前驅氣體爐130之至少一部分之處,以增進對該氣體爐130內該些前驅氣體之熱傳遞。 As an option, a passive heat transfer configuration (eg, a configuration comprising a material that behaves like a black body) can be placed in close proximity to or near at least a portion of the gas flooding furnace 130 within the reaction chamber 102 to enhance the gas furnace 130. The heat transfer of the precursor gases.
被動傳熱構造(例如,包含表現類似一黑體之材料之構造)可以如,舉例而言,2009年8月27日以Arena等人之名公開之美國專利申請公開US 2009/0214785 A1號中所揭露之方式提供於該反應腔102內,該公開案之完整揭露茲以此述及方式納入本說明書。 A passive heat transfer structure (e.g., a structure comprising a material that behaves like a black body) can be used, for example, in U.S. Patent Application Publication No. US 2009/0214785 A1, which is incorporated by reference in its entirety in The manner of disclosure is provided in the reaction chamber 102, the entire disclosure of which is incorporated herein by reference.
作為非限定性質之範例,該沉積系統100可包括該反應腔102內之一個或多個被動傳熱板177,如圖1所示。該些被動傳熱板177通常為平面,且其方向大致平行於該頂壁104與該底壁106。在一些實施例中,該些被動傳熱板177可較靠近該頂壁104而離該底壁106較遠,這樣,其於縱向上所在之平面便高於該工件底材116在該反應腔102內所在之平面。該些被 動傳熱板177可以僅跨越該反應腔102內空間之一部分,如圖1所示,或者該些被動傳熱板177可以實質上橫跨該反應腔102內整個空間。在一些實施例中,一沖淨氣體可流經該反應腔102內介於該頂壁104與該一片或多片被動傳熱板177間之空間,以防止該反應腔102內該頂壁104之內表面有不需要之材料沉積。舉例而言,此種沖淨氣體可由該氣體流入導管120A提供。當然,在其他實施例中,該反應腔102亦可納入與圖1中被動傳熱板177之組構不同之被動傳熱板組構,且此等傳熱板所在位置可以與圖1之被動傳熱板177之位置不同。 As an example of a non-limiting nature, the deposition system 100 can include one or more passive heat transfer plates 177 within the reaction chamber 102, as shown in FIG. The passive heat transfer plates 177 are generally planar and are oriented generally parallel to the top wall 104 and the bottom wall 106. In some embodiments, the passive heat transfer plates 177 may be closer to the top wall 104 than the bottom wall 106 such that the plane in the longitudinal direction is higher than the workpiece substrate 116 in the reaction chamber. The plane in which 102 is located. Some of these The heat transfer plate 177 may span only a portion of the interior of the reaction chamber 102, as shown in FIG. 1, or the passive heat transfer plates 177 may substantially span the entire space within the reaction chamber 102. In some embodiments, a purge gas may flow through the space between the top wall 104 and the one or more passive heat transfer plates 177 in the reaction chamber 102 to prevent the top wall 104 in the reaction chamber 102. There is an unnecessary deposition of material on the inner surface. For example, such purge gas may be provided by the gas inflow conduit 120A. Of course, in other embodiments, the reaction chamber 102 can also incorporate a passive heat transfer plate assembly different from the configuration of the passive heat transfer plate 177 of FIG. 1, and the positions of the heat transfer plates can be passive with FIG. The heat transfer plates 177 are located at different positions.
作為非限制性之另一範例,該前驅氣體爐130可包括一被動傳熱板178,其可設置在該第二板狀結構132B及該第三板狀結構132C之間,如圖3所示。此種被動傳熱板178可改進該些加熱元件118向該氣體爐130內前驅氣體所提供之熱傳遞,並可改進該氣體爐130內溫度之均勻性與一致性。該被動傳熱板178所包含之材料可具有高發射率值(接近完全發射)(黑體材料),且耐得住可能會在該反應腔102內遭遇之高溫及腐蝕性環境。舉例而言,此等材料可以包括氮化鋁(AlN)、碳化矽(SiC)及碳化硼(B4C)等,其具有之發射率值分別為0.98、0.92及0.92。這樣,該被動傳熱板178便可吸收該些加熱元件118發出之熱能,然後將該熱能再發散至該氣體爐130及爐中之前驅氣體。 As a non-limiting example, the precursor gas furnace 130 can include a passive heat transfer plate 178 that can be disposed between the second plate structure 132B and the third plate structure 132C, as shown in FIG. . Such passive heat transfer plates 178 can improve the heat transfer provided by the heating elements 118 to the precursor gases within the gas furnace 130 and can improve the uniformity and uniformity of temperature within the gas furnace 130. The material contained in the passive heat transfer plate 178 can have a high emissivity value (near full emission) (black body material) and withstand the high temperatures and corrosive environments that may be encountered within the reaction chamber 102. For example, such materials may include aluminum nitride (AlN), tantalum carbide (SiC), and boron carbide (B 4 C), etc., having emissivity values of 0.98, 0.92, and 0.92, respectively. Thus, the passive heat transfer plate 178 can absorb the heat energy emitted by the heating elements 118, and then dissipate the heat energy to the gas furnace 130 and the pre-drive gas in the furnace.
圖6為為一示意圖,其概要呈現與圖1之沉積系統100類似之另一沉積系統200之實施例之平面圖,但該沉積系統200中包括三個前驅氣體爐130A、130B、130C,該些氣體爐設置在該反應腔102之一內部區域中。這樣,該些前驅氣體爐130A、130B、130C中的每一個便可用於將不同之前 驅氣體注入該反應腔102。作為非限制性之範例,該前驅氣體爐130B可用於將GaCl3注入該反應腔102,該前驅氣體爐130A可用於將InCl3注入該反應腔102,該前驅氣體爐130C則可用於將AlCl3注入該反應腔102。作為一個選項,可利用該前驅氣體130B將一種三族元素前驅氣體注入該反應腔102,以沉積一種三五族半導體材料,該些前驅氣體爐130A、130C則可用於注入一個或多個前驅氣體,以將一種或多種摻雜物元素沉積於該三五族半導體材料中。 6 is a schematic diagram showing a plan view of another embodiment of a deposition system 200 similar to the deposition system 100 of FIG. 1, but including three precursor gas furnaces 130A, 130B, 130C in the deposition system 200, A gas furnace is disposed in an interior region of the reaction chamber 102. Thus, each of the precursor gas furnaces 130A, 130B, 130C can be used to inject different precursor gases into the reaction chamber 102. As a non-limiting example, the precursor gas furnace 130B can be used to inject GaCl 3 into the reaction chamber 102. The precursor gas furnace 130A can be used to inject InCl 3 into the reaction chamber 102. The precursor gas furnace 130C can be used to transfer AlCl 3 . The reaction chamber 102 is injected. As an option, a precursor gas of a group III element can be injected into the reaction chamber 102 by the precursor gas 130B to deposit a tri-five semiconductor material, and the precursor gas furnaces 130A, 130C can be used to inject one or more precursor gases. And depositing one or more dopant elements in the tri-five semiconductor material.
本說明書所述之沉積系統實施例,像是圖1之沉積系統100及圖6之沉積系統200,可使相當大量之高溫前驅氣體導入該反應腔102,同時使該些前驅氣體在空間上彼此分隔,直到該些氣體非常接近所要沉積材料之工件底材116為止,如此便可改進該些前驅氣體之利用效率。 Embodiments of the deposition system described herein, such as deposition system 100 of FIG. 1 and deposition system 200 of FIG. 6, can introduce a significant amount of high temperature precursor gas into the reaction chamber 102 while allowing the precursor gases to spatially each other Separation until the gases are very close to the workpiece substrate 116 of the material to be deposited, thus improving the utilization efficiency of the precursor gases.
之前已知之沉積系統(例如HVPE沉積系統)除了會在要沉積材料之工件底材116之表面上形成反應產物外,也經常會在該反應腔102內之表面形成反應產物。此種非必要之材料沉積在一段時間後會造成該反應腔102內之微粒含量增加,從而降低該工件底材116上所沉積材料之品質,並降低該些加熱元件118對該反應腔102的加熱效率。舉例而言,GaCl3在低於大約500℃之溫度下會從氣相凝結,若與GaCl3蒸汽接觸之表面,其溫度若沒有維持在蒸發溫度以上,GaCl3中的鎵就會沉積。此外,GaCl3在反應腔一般會轉換為GaCl,而Ga係從GaCl蒸汽所沉積。在高於大約730℃之溫度下,GaCl物質在能量上比GaCl3物質有利(energetically favorable)。因此,該前驅氣體爐130可用於將通過其中之前驅氣體加熱至高於大約730℃之溫度,然後再將該前驅氣體注入要沉積材料之工件底材116表面上 方。 Previously known deposition systems (e.g., HVPE deposition systems) often form a reaction product on the surface of the reaction chamber 102 in addition to forming a reaction product on the surface of the workpiece substrate 116 where the material is to be deposited. Such non-essential material deposition over a period of time causes an increase in the particulate content of the reaction chamber 102, thereby reducing the quality of the material deposited on the workpiece substrate 116 and reducing the heating element 118 to the reaction chamber 102. Heating efficiency. For example, GaCl 3 will condense from the gas phase at temperatures below about 500 ° C. If the surface in contact with GaCl 3 vapor is not maintained above the evaporation temperature, gallium in GaCl 3 will deposit. In addition, GaCl 3 is generally converted to GaCl in the reaction chamber, while Ga is deposited from GaCl vapor. At temperatures above about 730 ° C, the GaCl species is energetically more favorable than the GaCl 3 species. Thus, the precursor gas furnace 130 can be used to heat the precursor gas therein to a temperature above about 730 ° C, and then inject the precursor gas over the surface of the workpiece substrate 116 of the material to be deposited.
圖6為一剖面透視圖,其概要呈現一沉積系統200之另一示範性實施例。該沉積系統200與圖1之沉積系統100類似,並包括一進出閘門188(在圖6中處於開啟位置),該閘門所在之處遠離製程氣體被注入該反應腔102之位置。但該沉積系統200並未包括一內部前驅氣體爐130,而是包括位於該反應腔102外之一外部前驅氣體注入器230。該外部前驅氣體注入器230可被組構成用於加熱至少一個前驅氣體,並將該至少一個前驅氣體從一前驅氣體來源傳送至一氣體注入裝置210,該氣體注入裝置210實質上類似於圖1之氣體注入裝置110。 FIG. 6 is a cross-sectional perspective view schematically showing another exemplary embodiment of a deposition system 200. The deposition system 200 is similar to the deposition system 100 of FIG. 1 and includes an access gate 188 (in the open position in FIG. 6) that is remote from where the process gas is injected into the reaction chamber 102. However, the deposition system 200 does not include an internal precursor gas furnace 130, but includes an external precursor gas injector 230 located outside of the reaction chamber 102. The external precursor gas injector 230 can be configured to heat at least one precursor gas and transfer the at least one precursor gas from a precursor gas source to a gas injection device 210, the gas injection device 210 being substantially similar to FIG. The gas injection device 110.
作為非限制性之範例,該外部前驅氣體注入器230可包含如以下任何美國專利申請案或公開案所述之一前驅氣體注入器:2010年11月23日提出,名稱為「Methods of Forming Bulk III-Nitride Materials on Metal-Nitride Growth Template Layers,and Structures formed by Such Methods」之美國專利申請案61/416,525號;2009年9月10日以Arena等人之名公開之美國專利申請案公開2009/0223442 A1號;2009年9月10日公開,名稱為「Gas Injectors for CVD Systems with the Same」之國際專利申請案公開WO 2010/101715 A1號;2010年9月30日以Bertra之名提出之美國專利申請案12/894,724號;及2010年9月30日以Werkhoven之名提出之美國專利申請案12/895,311號,該些專利申請案及公開案之完整揭露茲以此述及方式納入本說明書。 By way of non-limiting example, the external precursor gas injector 230 can comprise a precursor gas injector as described in any of the following U.S. patent applications or publications: filed on November 23, 2010, entitled "Methods of Forming Bulk U.S. Patent Application Serial No. 61/416,525, the disclosure of which is incorporated herein by reference in its entirety in its entirety in 0223442 A1; published on September 10, 2009, entitled "Gas Injectors for CVD Systems with the Same", International Patent Application Publication No. WO 2010/101715 A1; September 30, 2010, in the name of Bertra Patent Application No. 12/894,724; and U.S. Patent Application Serial No. 12/895,311, filed on Sep. 30, 2010, in the name of Werkhoven, the entire disclosure of which is hereby incorporated by reference. .
該氣體注入器230可包含一加熱氣體注入器,其具有細長之一導管,該導管可具有一螺旋組構、一盤繞組構等等,當一種或多種製程氣體(例如一前驅氣體)流經該細長導管時會被該組構所加熱。外部加熱元件可在 製程氣體流過該延長導管時用於加熱製程氣體。作為一個選項,該氣體注入器230可納入一個或多個被動加熱結構(像是前文所述者),以改進對流過該氣體注入器230之製程氣體之加熱。 The gas injector 230 can include a heated gas injector having an elongated conduit, the conduit can have a spiral configuration, a coil winding configuration, etc., when one or more process gases (eg, a precursor gas) flow through The elongated catheter is heated by the structure. External heating elements are available at The process gas is used to heat the process gas as it flows through the extension conduit. As an option, the gas injector 230 can incorporate one or more passive heating structures (such as those previously described) to improve heating of the process gas flowing through the gas injector 230.
作為一個選項,該氣體注入器230更可包括一貯存器,該貯存器可被組構成容納用來和一製程氣體(或一製程氣體之分解或反應產物)反應之一液態試劑。舉例而言,該貯存器可被組構成用於容納一種液態金屬或其他元素,例如液態鎵、液態鋁或液態銦。在本發明之另外實施例中,該貯存器可被組構成容納用來和一製程氣體(或一製程氣體之分解或反應產物)反應之一固態試劑。舉例而言,該貯存器可被組構成用於容納一種或多種材料之固體體積,例如固態矽或固態鎂。 As an option, the gas injector 230 can further include a reservoir that can be configured to contain a liquid reagent for reacting with a process gas (or a decomposition or reaction product of a process gas). For example, the reservoir can be configured to hold a liquid metal or other element, such as liquid gallium, liquid aluminum or liquid indium. In a further embodiment of the invention, the reservoir may be configured to contain a solid reagent for reacting with a process gas (or a decomposition or reaction product of a process gas). For example, the reservoir can be grouped to hold a solid volume of one or more materials, such as solid or solid magnesium.
繼續參考圖6,從該外部前驅氣體注入器230注入該反應腔102的製程氣體可在一封閉體140內通過該反應腔102之內部區域,而被攜至接近該底材支撐結構114之一位置,以避免此種製程氣體在到達該底材支撐結構114上該工件底材116附近之前就與其他製程氣體混合。 With continued reference to FIG. 6, process gas injected into the reaction chamber 102 from the external precursor gas injector 230 can be carried within an enclosure 140 through an interior region of the reaction chamber 102 and brought into proximity to one of the substrate support structures 114. The location is such that such process gases are mixed with other process gases prior to reaching the substrate support structure 114 on the workpiece substrate 116.
在其他實施例中,該沉積系統可同時包括參照圖1所述之一內部前驅氣體爐130,及參照圖6所述之一外部前驅氣體爐230。舉例而言,圖6所示之封閉體240可以圖1之內部前驅氣體爐130取代。 In other embodiments, the deposition system can include one of the internal precursor gas furnaces 130 described with reference to FIG. 1, and one of the external precursor gas furnaces 230 described with reference to FIG. For example, the enclosure 240 shown in FIG. 6 can be replaced with the internal precursor gas furnace 130 of FIG.
如圖6所示,該反應腔102更包括結構支撐肋240,該些支撐肋係用於為該反應腔102提供結構剛性。此種支撐肋240可包含一種耐火材料,像是該反應腔102之頂壁104及底壁106所用之材料。在其他實施例中,圖1之反應腔102亦可包括此種結構支撐肋240。 As shown in FIG. 6, the reaction chamber 102 further includes structural support ribs 240 for providing structural rigidity to the reaction chamber 102. Such support ribs 240 may comprise a refractory material such as the material used for the top wall 104 and the bottom wall 106 of the reaction chamber 102. In other embodiments, the reaction chamber 102 of FIG. 1 can also include such structural support ribs 240.
圖7概要呈現本發明一沉積系統300之其他示範性實施例之俯視圖。 該沉積系統300實質上可與圖1之沉積系統100或圖6之沉積系統200類似,例外之處在於該進出閘門188位於該反應腔102之側邊,以縱向來看係介於該反應腔102之第一縱長端及該反應腔102之第二縱長端之間,其中,該第一縱長端靠近一種或多種製程氣體進入該反應腔102之位置103A,該第二縱長端靠近該些製程氣體被排出該反應腔102之位置103B。換句話說,在圖7之沉積系統300中,該些工件底材116可以沿著與氣體流過該反應腔102之大致方向垂直之一橫向方向進行裝載及卸載。這樣,該進出閘門188所在之處便遠離製程氣體注入該反應腔102之位置103A,如同圖1及圖6中該些實施例之進出閘門188一般。 FIG. 7 is a schematic top plan view of another exemplary embodiment of a deposition system 300 of the present invention. The deposition system 300 can be substantially similar to the deposition system 100 of FIG. 1 or the deposition system 200 of FIG. 6, with the exception that the access gate 188 is located on the side of the reaction chamber 102 and is interposed between the reaction chambers in a longitudinal direction. Between the first longitudinal end of the chamber 102 and the second longitudinal end of the reaction chamber 102, wherein the first lengthwise end is adjacent to the position 103A of the one or more process gases entering the reaction chamber 102, the second longitudinal end The position of the process gas is discharged to the position 103B of the reaction chamber 102. In other words, in the deposition system 300 of FIG. 7, the workpiece substrates 116 can be loaded and unloaded in a lateral direction that is perpendicular to the general direction in which the gas flows through the reaction chamber 102. Thus, the entry and exit gate 188 is located away from the location of the process gas into the reaction chamber 102, as in the inlet and outlet gates 188 of the embodiments of Figures 1 and 6.
如圖7所示,該沉積系統300更包括至少一個機械臂裝置310,該至少一個機械臂裝置310被組構成以自動機械方式將工件底材116經由該進出閘門188載入該反應腔102,以及將工件底材116經由該進出閘門188從該反應腔102卸載出來。此種機械臂裝置已為本發明所屬技術領域所知。雖然未呈現於圖1及圖6中,但圖1之沉積系統100及圖6之沉積系統200亦可包括至少一個此種機械臂裝置310,該至少一個機械臂裝置310被組構成以自動機械方式將工件底材116經由該進出閘門188載入該反應腔102,以及將工件底材116經由該進出閘門188從該反應腔102卸載出來。 As shown in FIG. 7, the deposition system 300 further includes at least one robot arm device 310, which is configured to automatically load the workpiece substrate 116 into the reaction chamber 102 via the access gate 188. And unloading the workpiece substrate 116 from the reaction chamber 102 via the access gate 188. Such a robotic arm device is known in the art to which the present invention pertains. Although not shown in FIGS. 1 and 6, the deposition system 100 of FIG. 1 and the deposition system 200 of FIG. 6 may also include at least one such robotic arm assembly 310 that is configured to be automated. The workpiece substrate 116 is loaded into the reaction chamber 102 via the inlet and outlet gates 188, and the workpiece substrate 116 is unloaded from the reaction chamber 102 via the inlet and outlet gates 188.
圖8概要呈現本發明一沉積系統400之其他示範性實施例之透視圖。該沉積系統400實質上可以與圖1之沉積系統100或圖6之沉積系統200類似,例外之處在於該反應腔102可分為兩個或更多個通道。在一些實施例中,該兩個或更多個通道可在縱向上交疊設置。舉例而言,該兩個或更多個通道可包含一裝載/卸載通道402以及一注入/排氣通道404。該裝載 /卸載通道402可位於該反應腔102內,介於一後部中間架406及該底壁106之間,該注入/排氣通道404可位於該反應腔102內,介於該後部中間架406及該頂壁104之間。 FIG. 8 is a schematic perspective view of another exemplary embodiment of a deposition system 400 of the present invention. The deposition system 400 can be substantially similar to the deposition system 100 of FIG. 1 or the deposition system 200 of FIG. 6, with the exception that the reaction chamber 102 can be divided into two or more channels. In some embodiments, the two or more channels may be arranged in an overlapping manner in the longitudinal direction. For example, the two or more channels can include a loading/unloading channel 402 and an injection/exhaust channel 404. The load The unloading channel 402 can be located in the reaction chamber 102 between a rear intermediate frame 406 and the bottom wall 106. The injection/exhaust channel 404 can be located in the reaction chamber 102 between the rear intermediate frame 406 and Between the top walls 104.
該注入/排氣通道404透過該真空室184而與該真空裝置113有流體連結,以將氣體副產物、載體氣體及任何過量前驅氣體從該反應腔102排出。 The injection/exhaust passage 404 is in fluid communication with the vacuum device 113 through the vacuum chamber 184 to exhaust gaseous byproducts, carrier gases, and any excess precursor gases from the reaction chamber 102.
該裝載/卸載通道402可延伸至該進出閘門188,該進出閘門188可挑選性地開啟,以將工件底材116經由該裝載/卸載通道402裝載至該底材支撐結構114及/或從該底材支撐結構114卸載。該進出閘門188可挑選性地關閉,以利用該沉積系統400處理該些工件底材116。此外,該裝載/卸載通道402可與該些連接器117之底部第一列115A有流體連結,以注入製程氣體。在此組構下,一個沖淨氣體可被注入該裝載/卸載通道402,以防止氣體副產物、載體氣體及任何過量前驅氣體進入該裝載/卸載通道402,從而減少(例如防止)材料寄生沉積在該進出閘門188上。 The loading/unloading passage 402 can extend to the access gate 188, the access gate 188 being selectively openable to load the workpiece substrate 116 to the substrate support structure 114 via the loading/unloading passage 402 and/or from the The substrate support structure 114 is unloaded. The access gate 188 can be selectively closed to process the workpiece substrates 116 using the deposition system 400. In addition, the loading/unloading channel 402 can be fluidly coupled to the first column 115A of the bottom of the connectors 117 to inject process gases. In this configuration, a purge gas can be injected into the loading/unloading passage 402 to prevent gaseous byproducts, carrier gases, and any excess precursor gases from entering the loading/unloading passage 402, thereby reducing (e.g., preventing) material parasitic deposition. On the entry and exit gate 188.
就裝載/卸載製程而言,可將至少一個機械臂裝置(圖8中未顯示)組構成沿著該裝載/卸載通道402橫向來回,以使工件底材116(及/或一底材支撐結構114)能夠以自動化機械方式經由該進出閘門188載入該反應腔102,並能夠以自動化機械方式將工件底材116(及/或該底材支撐結構114)經由該進出閘門188從該反應腔102卸載出來。此等機械臂裝置已為本發明所屬技術領域所知。 In the case of a loading/unloading process, at least one robotic arm assembly (not shown in FIG. 8) can be configured to traverse laterally along the loading/unloading passage 402 to allow the workpiece substrate 116 (and/or a substrate support structure) 114) The reaction chamber 102 can be loaded via the access gate 188 in an automated mechanical manner, and the workpiece substrate 116 (and/or the substrate support structure 114) can be automated from the reaction chamber via the access gate 188. 102 uninstalled. Such mechanical arm devices are known in the art to which the present invention pertains.
該底材支撐結構114及其上之工件底材116可沿著該底材支撐結構114之一旋轉軸線408升降。一驅動器(圖中未顯示)可被耦合至該主軸119,以使該底材支撐結構114及其上之該些工件底材116除繞著該旋轉軸線408 旋轉外,還可沿著該旋轉軸線408移動。 The substrate support structure 114 and the workpiece substrate 116 thereon can be raised and lowered along one of the rotational axes 408 of the substrate support structure 114. A driver (not shown) can be coupled to the spindle 119 such that the substrate support structure 114 and the workpiece substrates 116 thereon are disposed about the axis of rotation 408. In addition to the rotation, it is also movable along the axis of rotation 408.
在該反應腔102內,該底材支撐結構114及其上之工件底材116可被抬升至一沉積位置及下降至一裝載/卸載位置,以分別進行沉積和裝載/卸載製程。就沉積製程而言,可將該底材支撐結構114抬升至一沉積位置,以使該底材支撐結構114位於該注入/排氣通道404內或至少緊鄰該注入/排氣通道404,更具體而言,使該底材支撐結構114實質上與該後部中間架406共平面。就裝載/卸載製程而言,可將該底材支撐結構114下降至一裝載/卸載位置,以使該底材支撐結構114位於該裝載/卸載通道402內,更具體而言,使其靠近該底壁106。 Within the reaction chamber 102, the substrate support structure 114 and the workpiece substrate 116 thereon can be raised to a deposition location and lowered to a loading/unloading position for deposition and loading/unloading processes, respectively. In the case of a deposition process, the substrate support structure 114 can be raised to a deposition location such that the substrate support structure 114 is located within the injection/exhaust passage 404 or at least proximate to the injection/exhaust passage 404, more specifically In this regard, the substrate support structure 114 is substantially coplanar with the rear intermediate frame 406. In the case of a loading/unloading process, the substrate support structure 114 can be lowered to a loading/unloading position such that the substrate support structure 114 is located within the loading/unloading channel 402, and more particularly, close to the Bottom wall 106.
依照本發明另外之實施例,本說明書所述之沉積系統之實施例,像是圖1之沉積系統100、圖6之沉積系統200、圖7之沉積系統300及圖8之沉積系統400,皆可用於將半導體材料沉積在工件底材116上。 In accordance with additional embodiments of the present invention, embodiments of the deposition system described herein, such as deposition system 100 of FIG. 1, deposition system 200 of FIG. 6, deposition system 300 of FIG. 7, and deposition system 400 of FIG. It can be used to deposit semiconductor material on the workpiece substrate 116.
參考圖1,一工件底材116可以經由至少一個進出閘門188而載入一反應腔102並裝載至一底材支撐結構114上。一種或多種製程氣體,其可包括一個或多個前驅氣體,可經由遠離該至少一個進出閘門188之至少一個氣體注入裝置110流進該反應腔102。一種或多種製程氣體可經由至少一個真空裝置113而從該反應腔102排空,該至少一個真空裝置113可設置在就該底材支撐結構114而言相反於該至少一個氣體注入裝置110之一側。當一種或多種製程氣體從該至少一個氣體注入裝置110流至該至少一個真空裝置113時,該工件底材116之一表面會曝露在該一種或多種製程氣體中,半導體材料便可沉積在該工件底材114之表面。 Referring to FIG. 1, a workpiece substrate 116 can be loaded into a reaction chamber 102 via at least one access gate 188 and loaded onto a substrate support structure 114. One or more process gases, which may include one or more precursor gases, may flow into the reaction chamber 102 via at least one gas injection device 110 remote from the at least one inlet and outlet gate 188. One or more process gases may be evacuated from the reaction chamber 102 via at least one vacuum device 113, which may be disposed opposite one of the at least one gas injection device 110 with respect to the substrate support structure 114 side. When one or more process gases flow from the at least one gas injection device 110 to the at least one vacuum device 113, one surface of the workpiece substrate 116 may be exposed to the one or more process gases, and the semiconductor material may be deposited thereon. The surface of the workpiece substrate 114.
在一些實施例中,裝載及卸載該工件底材116所通過之進出閘門188 可如前所述,設置在就該真空裝置113而言相反於該至少一個氣體注入裝置110之一側。 In some embodiments, the loading and unloading gate 188 through which the workpiece substrate 116 passes is loaded and unloaded. As described above, it is disposed opposite to one side of the at least one gas injection device 110 as far as the vacuum device 113 is concerned.
此外,一流動沖淨氣體簾可以如前所述,利用該沖淨氣體簾裝置186而形成。該流動沖淨氣體簾可設置在該底材支撐結構114與該進出閘門188之間。 In addition, a flow flushing gas curtain can be formed using the flushing gas curtain device 186 as previously described. The flow flushing gas curtain can be disposed between the substrate support structure 114 and the access gate 188.
在一些實施例中,該些製程氣體可包含至少一些前驅氣體,該些前驅氣體被選定成包含一種三族元素前驅氣體及一種五族元素前驅氣體。在此等實施例中,待沉積在該工件底材114上之半導體材料可包括一種三五族半導體材料。該三族元素前驅氣體可選擇性地流過至少一個前驅氣體流動路徑,該流動路徑穿過設置在該反應腔102內之前驅氣體爐130以加熱該三族元素前驅氣體。 In some embodiments, the process gases can include at least some precursor gases selected to include a tri-group element precursor gas and a group C element precursor gas. In such embodiments, the semiconductor material to be deposited on the workpiece substrate 114 may comprise a tri-five semiconductor material. The Group III element precursor gas is selectively circulated through at least one precursor gas flow path through a forward gas furnace 130 disposed within the reaction chamber 102 to heat the Group III element precursor gas.
該三族元素前驅氣體可包含GaCl3、InCl3及AlCl3其中一個或多個。在此等實施例中,加熱該三族元素前驅氣體可能造成GaCl3、InCl3及AlCl3至少其中之一分解而形成GaCl、InCl、AlCl及一種氯化物質(例如HCl)至少其中之一。 The Group III element precursor gas may comprise one or more of GaCl 3 , InCl 3 and AlCl 3 . In such embodiments, heating the tri-group element precursor gas may cause at least one of GaCl 3 , InCl 3 , and AlCl 3 to decompose to form at least one of GaCl, InCl, AlCl, and a chlorinated species (eg, HCl).
在該氣體爐130內加熱該三族元素前驅氣體後,便可在該反應腔102內使該五族元素前驅氣體與該三族元素前驅氣體於該工件底材116上方混合在一起。該工件底材116之表面可曝露在該五族元素前驅氣體與該三族元素前驅氣體之混合物中,以在該工件底材116之表面上形成一種三五族半導體材料。 After heating the tri-group element precursor gas in the gas furnace 130, the group C element precursor gas and the group III element precursor gas may be mixed together over the workpiece substrate 116 in the reaction chamber 102. The surface of the workpiece substrate 116 may be exposed to a mixture of the Group 5 element precursor gas and the Group III element precursor gas to form a Group III-5 semiconductor material on the surface of the workpiece substrate 116.
與本發明相符之類似方法可利用圖6之沉積系統200加以實施。 A similar method consistent with the present invention can be implemented using the deposition system 200 of FIG.
本發明之方法亦包括本說明書所述沉積系統之製作方法,像是圖1之 沉積系統100及圖6之沉積系統200。形成一反應腔102使之包含一頂壁104、一底壁106及至少一側壁108A、108B。提供一底材支撐結構114,使其至少局部設置在該反應腔102內並支撐至少一個工件底材116。至少一個氣體注入裝置110可在一第一位置103A耦合至該反應腔。該氣體注入裝置可被組構成在該第一位置103A將一種或多種製程氣體注入該反應腔102。該一種或多種製程氣體可包括至少一個前驅氣體。至少一個真空裝置113可在一第二位置耦合至該反應腔102。該真空裝置103可被組構成將該一種或多種製程氣體從該第一位置103A經由該反應腔102抽取至該第二位置103B,並在該第二位置103B將該一種或多種製程氣體從該反應腔102排空。 The method of the present invention also includes a method of fabricating the deposition system of the present specification, such as FIG. Deposition system 100 and deposition system 200 of FIG. A reaction chamber 102 is formed to include a top wall 104, a bottom wall 106, and at least one side wall 108A, 108B. A substrate support structure 114 is provided that is at least partially disposed within the reaction chamber 102 and supports at least one workpiece substrate 116. At least one gas injection device 110 can be coupled to the reaction chamber at a first location 103A. The gas injection device can be configured to inject one or more process gases into the reaction chamber 102 at the first location 103A. The one or more process gases can include at least one precursor gas. At least one vacuum device 113 can be coupled to the reaction chamber 102 in a second position. The vacuum device 103 can be configured to extract the one or more process gases from the first location 103A via the reaction chamber 102 to the second location 103B, and at the second location 103B the one or more process gases are from the The reaction chamber 102 is evacuated.
至少一個進出閘門188可在遠離該第一位置103A之一位置耦合至該反應腔102,其中該氣體注入裝置110係在該第一位置103A耦合至該反應腔102。該至少一個進出閘門188可被組構成使一工件底材116得以經由該至少一個進出閘門188而載入該反應腔102並裝載至該底材支撐結構114上,以及從離開該反應腔102之底材支撐結構114卸載。 At least one access gate 188 can be coupled to the reaction chamber 102 at a location remote from the first location 103A, wherein the gas injection device 110 is coupled to the reaction chamber 102 at the first location 103A. The at least one access gate 188 can be configured such that a workpiece substrate 116 can be loaded into the reaction chamber 102 via the at least one access gate 188 and loaded onto the substrate support structure 114, and from the reaction chamber 102. The substrate support structure 114 is unloaded.
茲將本發明其他非限制性質之示範性實施例敘述如下。 Exemplary embodiments of other non-limiting properties of the invention are described below.
實施例1:一種沉積系統,其包含:由一頂壁、一底壁及至少一側壁所定義之一反應腔;至少局部設置在該反應腔內之一底材支撐結構,該底材支撐結構被組構成用於支撐該反應腔內之一工件底材;至少一個氣體注入裝置,用於在一第一位置將包含至少一種前驅氣體之一種或多種製程氣體注入該反應腔;一真空裝置,用於將該一種或多種製程氣體從該第一位置經由該反應腔抽取至一第二位置,並在該第二位置將該一種或多種製程氣體從該反應腔排空;以及至少一個進出閘門,通過該閘門,一工件底材 可載入該反應腔並裝載至該底材支撐結構上,以及從離開該反應腔之底材支撐結構卸載,該至少一個進出閘門所在之處遠離該第一位置。 Embodiment 1: A deposition system comprising: a reaction chamber defined by a top wall, a bottom wall and at least one side wall; at least partially disposed in the reaction chamber, a substrate support structure, the substrate support structure Formed to support one of the workpiece substrates in the reaction chamber; at least one gas injection device for injecting one or more process gases containing at least one precursor gas into the reaction chamber at a first location; a vacuum device, And for extracting the one or more process gases from the first location to the second location via the reaction chamber, and evacuating the one or more process gases from the reaction chamber at the second location; and at least one access gate Through the gate, a workpiece substrate The reaction chamber can be loaded and loaded onto the substrate support structure and unloaded from the substrate support structure exiting the reaction chamber, the at least one access gate being remote from the first location.
實施例2:如實施例1之沉積系統,其中該第一位置係設置在該底材支撐結構之一第一側,該第二位置係設置在該底材支撐結構之相反第二側。 Embodiment 2: The deposition system of Embodiment 1, wherein the first location is disposed on a first side of the substrate support structure and the second location is disposed on an opposite second side of the substrate support structure.
實施例3:如實施例2之沉積系統,其中該第二位置係設置在該底材支撐結構及該至少一個進出閘門之間。 Embodiment 3: The deposition system of Embodiment 2, wherein the second location is disposed between the substrate support structure and the at least one access gate.
實施例4:如實施例1至3中任一例之沉積系統,其更包含至少一個沖淨氣體注入裝置,其被組構成在該至少一個沖淨氣體注入裝置及該真空裝置間形成流動之一沖淨氣體簾,該流動沖淨氣體簾設置在該工件支撐結構及該至少一個進出閘門間。 Embodiment 4: The deposition system of any one of embodiments 1 to 3, further comprising at least one flush gas injection device configured to form one of a flow between the at least one flush gas injection device and the vacuum device A flushing gas curtain is disposed between the workpiece support structure and the at least one inlet and outlet gate.
實施例5:如實施例1之沉積系統,其中該第二位置設置在該底材支撐結構及該至少一個進出閘門間。 Embodiment 5: The deposition system of Embodiment 1, wherein the second location is disposed between the substrate support structure and the at least one access gate.
實施例6:如實施例1至4中任一例之沉積系統,其中該至少一個氣體注入裝置位於該反應腔之一第一端,該至少一個進出閘門位於該反應腔之相反第二端。 The deposition system of any one of embodiments 1 to 4, wherein the at least one gas injection device is located at a first end of the reaction chamber, and the at least one inlet and outlet gate is located at an opposite second end of the reaction chamber.
實施例7:如實施例1至4中任一例之沉積系統,其中該至少一個氣體注入裝置位於該反應腔之一第一端,該至少一個進出閘門位於該反應腔之一側邊。 The deposition system of any one of embodiments 1 to 4, wherein the at least one gas injection device is located at a first end of the reaction chamber, and the at least one inlet and outlet gate is located at a side of the reaction chamber.
實施例8:如實施例1至7中任一例之沉積系統,其中該至少一個進出閘門包含至少一個板體,該至少一個板體被組構成在閉合之一第一位置及開啟之一第二位置間移動,其中該反應腔至少實質上是封閉的,當該至少一個板體處於該閉合第一位置時,無法經由該至少一個進出閘門接觸到該 底材支撐結構,當該至少一個板體處於該開啟第二位置時,可經由該至少一個進出閘門接觸到該底材支撐結構。 Embodiment 8: The deposition system of any one of embodiments 1 to 7, wherein the at least one access gate comprises at least one plate body, the at least one plate body being grouped in a first position of closing and one of opening one Moving between positions, wherein the reaction chamber is at least substantially closed, and when the at least one plate is in the closed first position, the at least one access gate cannot be accessed via the at least one access gate The substrate support structure is adapted to contact the substrate support structure via the at least one access gate when the at least one plate is in the open second position.
實施例9:如實施例1至8中任一例之沉積系統,其中該至少一個氣體注入裝置包含一氣體注入歧管。 Embodiment 9. The deposition system of any of embodiments 1 to 8, wherein the at least one gas injection device comprises a gas injection manifold.
實施例10:如實施例1至9中任一例之沉積系統,其更包含設置在該反應腔內之至少一個內部前驅氣體爐,該至少一個內部前驅氣體爐被組構成用於將該反應腔內之至少一個前驅氣體加熱,並將該至少一個前驅氣體從該至少一個氣體注入裝置運送至靠近該底材支撐結構之一位置。 Embodiment 10: The deposition system of any one of embodiments 1 to 9, further comprising at least one internal precursor gas furnace disposed in the reaction chamber, the at least one internal precursor gas furnace being configured to be used for the reaction chamber At least one of the precursor gases is heated and transports the at least one precursor gas from the at least one gas injection device to a location adjacent the substrate support structure.
實施例11:如實施例1至10中任一例之沉積系統,其更包含位於該反應腔外之至少一個外部前驅氣體注入器,該至少一個外部前驅氣體注入器被組構成用於加熱至少一個前驅氣體,並將該至少一個前驅氣體從一前驅氣體來源運送至該至少一個氣體注入裝置。 Embodiment 11: The deposition system of any of embodiments 1 to 10, further comprising at least one external precursor gas injector located outside the reaction chamber, the at least one external precursor gas injector being configured to heat at least one a precursor gas and transporting the at least one precursor gas from a precursor gas source to the at least one gas injection device.
實施例12:如實施例1至11中任一例之沉積系統,其更包含至少一個機械臂裝置,該至少一個機械臂裝置被組構成以自動機械方式將工件底材經由該至少一個進出閘門裝載至該反應腔,以及將工件底材經由該至少一個進出閘門從該反應腔卸載出來。 Embodiment 12: The deposition system of any of embodiments 1 to 11, further comprising at least one robotic arm device configured to automatically load the workpiece substrate through the at least one access gate To the reaction chamber, and unloading the workpiece substrate from the reaction chamber via the at least one inlet and outlet gate.
實施例13:如實施例1至12中任一例之沉積系統,其中用於注入一種或多種製程氣體之該至少一個氣體注入裝置被組構成穿過該反應腔之至少一側壁以注入該一種或多種製程氣體,且其中該至少一個進出閘門延伸穿過另一側壁,該另一側壁遠離該一種或多種製程氣體注入所穿過之該至少一側壁。 Embodiment 13: The deposition system of any one of embodiments 1 to 12, wherein the at least one gas injection device for injecting one or more process gases is configured to pass through at least one sidewall of the reaction chamber to inject the one or a plurality of process gases, and wherein the at least one inlet and outlet gate extends through the other sidewall, the other sidewall being remote from the at least one sidewall through which the one or more process gases are injected.
實施例14:如實施例13之沉積系統,其中該一種或多種製程氣體注入 所穿過之該至少一側壁及該另一側壁位於該反應腔之相對端。 Embodiment 14: The deposition system of Embodiment 13, wherein the one or more process gas injections The at least one side wall and the other side wall that pass through are located at opposite ends of the reaction chamber.
實施例15:一種利用一沉積系統將半導體材料沉積在一工件底材上之方法,其包含:將一工件底材經由至少一個進出閘門載入一反應腔並裝載至一底材支撐結構上;使一種或多種製程氣體經由至少一個氣體注入裝置流入該反應腔,該至少一個氣體注入裝置位於遠離該至少一個進出閘門之處,該一種或多種製程氣體包括至少一個前驅氣體;使該一種或多種製程氣體經由至少一個真空裝置而從該反應腔排空,該至少一個真空裝置位於就該底材支撐結構而言相反於該至少一個氣體注入裝置之一側;當該一種或多種製程氣體從該至少一個氣體注入裝置流向該至少一個真空裝置時,使該工件底材之一表面曝露在該一種或多種製程氣體中,並使半導體材料沉積在該工件底材之該表面上;以及將該工件底材經由該至少一個進出閘門從該反應腔卸載出來。 Embodiment 15: A method for depositing a semiconductor material on a workpiece substrate using a deposition system, comprising: loading a workpiece substrate into a reaction chamber via at least one access gate and loading onto a substrate support structure; Flowing one or more process gases into the reaction chamber via at least one gas injection device, the at least one gas injection device being located remotely from the at least one access gate, the one or more process gases comprising at least one precursor gas; causing the one or more Process gas is evacuated from the reaction chamber via at least one vacuum device located opposite one side of the at least one gas injection device with respect to the substrate support structure; when the one or more process gases are from And flowing at least one gas injection device to the at least one vacuum device, exposing one surface of the workpiece substrate to the one or more process gases, and depositing a semiconductor material on the surface of the workpiece substrate; and the workpiece The substrate is unloaded from the reaction chamber via the at least one access gate.
實施例16:如實施例15之方法,其更包含選定該至少一個前驅氣體,使之包含一種三族元素前驅氣體及一種五族元素前驅氣體。 Embodiment 16: The method of Embodiment 15, further comprising selecting the at least one precursor gas to include a Group III element precursor gas and a Group 5 element precursor gas.
實施例17:如實施例15或實施例16之方法,其中將半導體材料沉積在該工件底材之該表面上包含將一種三五族半導體材料沉積在該工件底材之該表面上。 The method of embodiment 15 or embodiment 16, wherein depositing a semiconductor material on the surface of the workpiece substrate comprises depositing a tri-five semiconductor material on the surface of the workpiece substrate.
實施例18:如實施例15至17中任一例之方法,其中將該工件底材經由該至少一個進出閘門載入該反應腔並裝載至該底材支撐結構上包含將該工件底材經由該至少一個進出閘門,其位於就該至少一個真空裝置而言相反於該至少一個氣體注入裝置之一側,載入該反應腔。 The method of any one of embodiments 15 to 17, wherein loading the workpiece substrate into the reaction chamber via the at least one inlet and outlet gate and loading onto the substrate support structure comprises passing the workpiece substrate through the At least one access gate is located on one side of the at least one gas injection device for the at least one vacuum device and is loaded into the reaction chamber.
實施例19:如實施例15至18中任一例之方法,其更包含形成設置在 該工件支撐結構及該至少一個進出閘門間之一流動沖淨氣體簾。 Embodiment 19: The method of any one of embodiments 15 to 18, further comprising forming the The workpiece support structure and one of the at least one inlet and outlet gates flow a flushing gas curtain.
實施例20:一種製作一沉積系統之方法,其包含:形成一反應腔使之包含一頂壁、一底壁及至少一側壁;提供用於支撐至少一個工件底材之一底材支撐結構,使之至少局部設置在該反應腔內;在一第一位置將至少一個氣體注入裝置耦合至該反應腔,該至少一個氣體注入裝置被組構成在該第一位置將包含至少一個前驅氣體之一種或多種製程氣體注入該反應腔;在一第二位置將至少一個真空裝置耦合至該反應腔,該至少一個真空裝置被組構成將該一種或多種製程氣體從該第一位置經由該反應腔抽取至該第二位置,並在該第二位置將該一種或多種製程氣體從該反應腔排空;以及在遠離該第一位置之一位置將至少一個進出閘門耦合至該反應腔,該至少一個進出閘門被組構成使一工件底材得以經由該至少一個進出閘門而載入該反應腔並裝載至該底材支撐結構上,以及從離開該反應腔之底材支撐結構卸載。 Embodiment 20: A method of fabricating a deposition system, comprising: forming a reaction chamber including a top wall, a bottom wall, and at least one side wall; providing a substrate support structure for supporting at least one workpiece substrate, Having at least partially disposed within the reaction chamber; coupling at least one gas injection device to the reaction chamber at a first location, the at least one gas injection device being configured to comprise at least one precursor gas at the first location Or a plurality of process gases are injected into the reaction chamber; at least one vacuum device is coupled to the reaction chamber in a second position, the at least one vacuum device being configured to draw the one or more process gases from the first location via the reaction chamber Up to the second position, and evacuating the one or more process gases from the reaction chamber at the second position; and coupling at least one access gate to the reaction chamber at a location remote from the first position, the at least one The access gates are configured to enable a workpiece substrate to be loaded into the reaction chamber via the at least one access gate and loaded to the substrate support structure And unloading the substrate from leaving the reaction chamber of the support structure.
實施例21:如實施例20之方法,其更包含將該至少一個氣體注入裝置設置在該底材支撐結構之一第一側,並將該至少一個真空裝置設置在該底材支撐結構之相反第二側。 Embodiment 21: The method of embodiment 20, further comprising disposing the at least one gas injection device on a first side of the substrate support structure and disposing the at least one vacuum device on the opposite side of the substrate support structure The second side.
實施例22:如實施例20或實施例21之方法,其更包含將該至少一個真空裝置設置在該底材支撐結構及該至少一個進出閘門之間。 Embodiment 22: The method of Embodiment 20 or Embodiment 21, further comprising disposing the at least one vacuum device between the substrate support structure and the at least one access gate.
實施例23:如實施例20至22中任一例之方法,其更包含在靠近該至少一個真空裝置處將至少一個沖淨氣體注入裝置耦合至該反應腔,該至少一個沖淨氣體注入裝置被組構成用於形成一沖淨氣體簾,使之從該至少一個沖淨氣體注入裝置流至介於該底材支撐結構及該至少一個進出閘門間之 該至少一個真空裝置。 The method of any one of embodiments 20 to 22, further comprising coupling at least one flush gas injection device to the reaction chamber adjacent to the at least one vacuum device, the at least one flush gas injection device being The group is configured to form a flushing gas curtain from the at least one flushing gas injection device to be interposed between the substrate supporting structure and the at least one inlet and outlet gate The at least one vacuum device.
實施例24:如實施例20至23中任一例之方法,其更包含將該至少一個真空裝置設置在該底材支撐結構及該至少一個進出閘門之間。 The method of any one of embodiments 20 to 23, further comprising disposing the at least one vacuum device between the substrate support structure and the at least one access gate.
實施例25:如實施例20至24中任一例之方法,其更包含將該至少一個氣體注入裝置設置在該反應腔之一第一端,並將該至少一個進出閘門設置在該反應腔之相反第二端。 The method of any one of embodiments 20 to 24, further comprising: disposing the at least one gas injection device at one of the first ends of the reaction chamber, and disposing the at least one inlet and outlet gate in the reaction chamber Opposite the second end.
上述該些示範性實施例並不會限制本發明之範圍,因為這些實施例僅為本發明實施例之範例,而本發明係由所附之申請專利範圍及其法律同等效力所界定。任何等效之實施例均屬於本發明之範圍。事實上,對於本發明所屬技術領域具有通常知識者而言,除本說明書所示及所述者外,對於本發明之各種修改,例如替換所述元件之有用組合,都會因本說明書之敘述而變得顯而易見。此等修改亦視為屬於所附之申請專利範圍。 The above-described exemplary embodiments are not intended to limit the scope of the invention, as these embodiments are only examples of the embodiments of the invention, and the invention is defined by the scope of the appended claims and their legal equivalents. Any equivalent embodiments are within the scope of the invention. In fact, various modifications of the invention, such as a substitute for a useful combination of the elements, in addition to those shown and described herein, will be apparent from the description of the specification. Become obvious. Such modifications are also considered to fall within the scope of the appended patent application.
100、200、300、400‧‧‧沉積系統 100, 200, 300, 400‧‧‧ deposition systems
102‧‧‧反應腔 102‧‧‧Reaction chamber
103A‧‧‧第一位置 103A‧‧‧First position
103B‧‧‧第二位置 103B‧‧‧second position
104‧‧‧頂壁 104‧‧‧ top wall
106‧‧‧底壁 106‧‧‧ bottom wall
108A‧‧‧第一側壁 108A‧‧‧First side wall
108B‧‧‧第二側壁 108B‧‧‧second side wall
110‧‧‧裝置 110‧‧‧ device
111‧‧‧冷卻導管 111‧‧‧Cooling duct
112‧‧‧裝載次組件 112‧‧‧Load subassembly
113‧‧‧真空裝置 113‧‧‧Vacuum device
114‧‧‧底材支撐結構 114‧‧‧Substrate support structure
116‧‧‧工件底材 116‧‧‧Workpiece substrate
115A~115E‧‧‧多列 115A~115E‧‧‧Multiple columns
117‧‧‧連接器 117‧‧‧Connector
118‧‧‧加熱元件 118‧‧‧ heating element
119‧‧‧主軸 119‧‧‧ Spindle
119A~119C‧‧‧每一區 119A~119C‧‧‧Every district
120A~120E‧‧‧導管 120A~120E‧‧‧ catheter
121A~121E‧‧‧氣閥 121A~121E‧‧‧ gas valve
122A~122E‧‧‧氣體來源 122A~122E‧‧‧ gas source
130‧‧‧內部前驅氣體爐 130‧‧‧Internal precursor gas furnace
132A~132E‧‧‧板狀之結構 132A~132E‧‧‧ plate-like structure
134‧‧‧腔室 134‧‧‧ chamber
136‧‧‧脊狀凸起 136‧‧‧ ridges
138、148、160‧‧‧入口 138, 148, 160‧‧‧ entrance
142‧‧‧管狀構件 142‧‧‧Tubular components
144‧‧‧密封構件 144‧‧‧ Sealing member
147A、147B、166A、166B、158A、158B‧‧‧輔助密封部分 147A, 147B, 166A, 166B, 158A, 158B‧‧‧Auxiliary seals
150、162‧‧‧腔室 150, 162‧‧ ‧ chamber
140、156、164‧‧‧出口 140, 156, 164‧‧ exports
168‧‧‧支撐結構之一上表面 168‧‧‧one upper surface of the support structure
170‧‧‧第一組 170‧‧‧First Group
172‧‧‧第二組 172‧‧‧ second group
174‧‧‧障壁 174‧‧ ‧ barrier
177、178‧‧‧被動傳熱板 177, 178‧‧‧ Passive heat transfer plates
180‧‧‧第四板狀結構之端面 180‧‧‧End face of the fourth plate structure
182‧‧‧第五板狀結構之端面 182‧‧‧End of the fifth plate-like structure
184‧‧‧真空室 184‧‧‧vacuum room
186‧‧‧沖淨氣體簾裝置 186‧‧‧ flushing gas curtain device
188‧‧‧進出閘門 188‧‧‧In and out gates
210‧‧‧氣體注入裝置 210‧‧‧ gas injection device
230‧‧‧外部前驅氣體注入器 230‧‧‧External precursor gas injector
240‧‧‧封閉體 240‧‧‧Closed
310‧‧‧機械臂裝置 310‧‧‧Mechanical arm device
402‧‧‧裝載/卸載通道 402‧‧‧Loading/unloading channels
404‧‧‧注入/排氣通道 404‧‧‧Injection/exhaust passage
406‧‧‧後部中間架 406‧‧‧ rear intermediate frame
408‧‧‧旋轉軸線 408‧‧‧Rotation axis
經由參考以下本發明示範性實施例之詳細說明可更充分了解本發明,該些示範性實施例圖解於所附圖式內,其中:圖1為一剖面透視圖,其概要呈現一種沉積系統之示範性實施例,該沉積系統包括可讓工件底材插入並從一反應腔移出之一進出閘門,該進出閘門所在之處遠離製程氣體注入該反應腔之位置;圖2為圖1之沉積系統中一氣體注入裝置之前端外表面之透視圖;圖3為圖1之沉積系統中一內部前驅氣體爐之截面圖;圖4為圖1及圖2之前驅氣體爐中該些板狀結構其中之一的俯視平面 圖;圖5為圖1之沉積系統中一內部前驅氣體爐之透視圖;圖6為一剖面透視圖,其概要呈現一種沉積系統的另一示範性實施例,該沉積系統包括一進出閘門,其所在之處遠離製程氣體注入該反應腔之位置,但該沉積系統包括一外部前驅氣體注入器,而非一內部前驅氣體爐;圖7為一俯視圖,其概要呈現本發明之一種沉積系統之另一示範性實施例,該沉積系統包括一進出閘門,該進出閘門所在之處遠離製程氣體注入該反應腔之位置;以及圖8為一剖面透視圖,其概要呈現一種沉積系統之另一示範性實施例,該沉積系統包括一進出閘門,該進出閘門所在之處遠離製程氣體注入該反應腔之位置,其中該反應腔中包含多於一個之氣體流通通道。 The invention will be more fully understood from the following detailed description of exemplary embodiments of the invention, which are illustrated in the accompanying drawings, in which: FIG. In an exemplary embodiment, the deposition system includes an inlet and outlet gate for inserting and removing a workpiece substrate from a reaction chamber, where the inlet and outlet gates are located away from the process gas injection into the reaction chamber; FIG. 2 is the deposition system of FIG. A perspective view of the outer surface of the front end of the first gas injection device; FIG. 3 is a cross-sectional view of an internal precursor gas furnace in the deposition system of FIG. 1; FIG. 4 is a view of the plate-like structure of the gas-driven furnace of FIG. 1 and FIG. One of the planes Figure 5 is a perspective view of an internal precursor gas furnace in the deposition system of Figure 1; Figure 6 is a cross-sectional perspective view schematically showing another exemplary embodiment of a deposition system including an access gate, Where it is located away from the location where the process gas is injected into the reaction chamber, but the deposition system includes an external precursor gas injector instead of an internal precursor gas furnace; FIG. 7 is a top plan view schematically showing a deposition system of the present invention In another exemplary embodiment, the deposition system includes an access gate that is remote from the location where the process gas is injected into the reaction chamber; and FIG. 8 is a cross-sectional perspective view that schematically illustrates another demonstration of a deposition system. In an embodiment, the deposition system includes an entry and exit gate that is located away from the process gas injection into the reaction chamber, wherein the reaction chamber contains more than one gas flow passage.
100‧‧‧沉積系統 100‧‧‧Deposition system
102‧‧‧反應腔 102‧‧‧Reaction chamber
103A‧‧‧第一位置 103A‧‧‧First position
103B‧‧‧第二位置 103B‧‧‧second position
104‧‧‧頂壁 104‧‧‧ top wall
106‧‧‧底壁 106‧‧‧ bottom wall
108A‧‧‧第一側壁 108A‧‧‧First side wall
108B‧‧‧第二側壁 108B‧‧‧second side wall
110‧‧‧裝置 110‧‧‧ device
111‧‧‧冷卻導管 111‧‧‧Cooling duct
112‧‧‧裝載次組件 112‧‧‧Load subassembly
113‧‧‧真空裝置 113‧‧‧Vacuum device
114‧‧‧底材支撐結構 114‧‧‧Substrate support structure
116‧‧‧工件底材 116‧‧‧Workpiece substrate
115A~115E‧‧‧多列 115A~115E‧‧‧Multiple columns
117‧‧‧連接器 117‧‧‧Connector
118‧‧‧加熱元件 118‧‧‧ heating element
119‧‧‧主軸 119‧‧‧ Spindle
120A~120E‧‧‧導管 120A~120E‧‧‧ catheter
121A~121E‧‧‧氣閥 121A~121E‧‧‧ gas valve
122A~122E‧‧‧氣體來源 122A~122E‧‧‧ gas source
130‧‧‧內部前驅氣體爐 130‧‧‧Internal precursor gas furnace
168‧‧‧支撐結構之一上表面 168‧‧‧one upper surface of the support structure
170‧‧‧第一組 170‧‧‧First Group
172‧‧‧第二組 172‧‧‧ second group
174‧‧‧障壁 174‧‧ ‧ barrier
177‧‧‧被動傳熱板 177‧‧‧ Passive heat transfer plates
184‧‧‧真空室 184‧‧‧vacuum room
186‧‧‧沖淨氣體簾裝置 186‧‧‧ flushing gas curtain device
188‧‧‧進出閘門 188‧‧‧In and out gates
Claims (19)
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US201161526137P | 2011-08-22 | 2011-08-22 | |
FR1157954A FR2979748B1 (en) | 2011-09-07 | 2011-09-07 | DEPOSITION SYSTEMS HAVING ACCESS DOORS TO DESIRABLE LOCATIONS, AND METHODS RELATING THERETO |
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TW201309840A true TW201309840A (en) | 2013-03-01 |
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