TW201307997A - Actinic ray-sensitive or radiation-sensitive resin composition, resist film and pattern forming method each using the composition, manufacturing method of electronic device and electronic device - Google Patents

Actinic ray-sensitive or radiation-sensitive resin composition, resist film and pattern forming method each using the composition, manufacturing method of electronic device and electronic device Download PDF

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TW201307997A
TW201307997A TW101123357A TW101123357A TW201307997A TW 201307997 A TW201307997 A TW 201307997A TW 101123357 A TW101123357 A TW 101123357A TW 101123357 A TW101123357 A TW 101123357A TW 201307997 A TW201307997 A TW 201307997A
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alkyl group
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Akinori Shibuya
Tomoki Matsuda
Katsuhiro Shimono
Yoko Tokugawa
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Fujifilm Corp
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01Sulfonic acids
    • C07C309/02Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/03Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C07C309/06Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing halogen atoms, or nitro or nitroso groups bound to the carbon skeleton
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    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D209/00Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
    • C07D209/56Ring systems containing three or more rings
    • C07D209/80[b, c]- or [b, d]-condensed
    • C07D209/82Carbazoles; Hydrogenated carbazoles
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D307/00Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
    • C07D307/77Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom ortho- or peri-condensed with carbocyclic rings or ring systems
    • C07D307/91Dibenzofurans; Hydrogenated dibenzofurans
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D333/00Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
    • C07D333/50Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
    • C07D333/76Dibenzothiophenes
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    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D409/00Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms
    • C07D409/14Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing three or more hetero rings
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/36Sulfur-, selenium-, or tellurium-containing compounds
    • C08K5/41Compounds containing sulfur bound to oxygen
    • C08K5/42Sulfonic acids; Derivatives thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2041Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

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  • Materials For Photolithography (AREA)
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Abstract

An actinic ray-sensitive or radiation-sensitive resin composition, includes: (A) a compound represented by the following formula (I); and (B) a resin: wherein X represents an oxygen atom, a sulfur atom or -N(Rx)-; each of R1 to R8 and Rx independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an alkoxy group, an alkoxycarbonyl group, an acyl group, an alkylcarbonyloxy group, an aryl group, an aryloxy group, an aryloxycarbonyl group or an arylcarbonyloxy group; and R1 to R8 may combine with each other to form a ring, provided that at least two members out of R1 to R8 represent a structure represented by the following formula (II) as defined in the specification.

Description

感光化射線性或感放射線性樹脂組成物、分別使用該組成物的抗蝕劑膜及圖案形方法、電子元件的製造方法及電子元件 Photosensitive ray-sensitive or radiation-sensitive resin composition, resist film and pattern-forming method using the same, electronic component manufacturing method, and electronic component

本發明是有關於一種感光化射線性或感放射線性樹脂組成物,其能夠經光化射線或放射線照射後的反應而改變其性質,且本發明有關於分別使用此組成物的抗蝕劑膜及圖案形成方法。更具體而言,本發明是有關於一種感光化射線性或感放射線性樹脂組成物,其用於半導體(諸如IC)製程、液晶元件或電路板(諸如熱頭)製造、其他感光加工製程,或用於平版印刷板或酸可固化組成物;分別使用此組成物的抗蝕劑膜及圖案形成方法;以及電子元件的製造方法及電子元件。 The present invention relates to a sensitizing ray-sensitive or radiation-sensitive resin composition capable of changing its properties by a reaction after actinic ray or radiation irradiation, and the present invention relates to a resist film using the composition separately And pattern forming method. More particularly, the present invention relates to a sensitized ray- or radiation-sensitive resin composition for use in a semiconductor (such as IC) process, a liquid crystal cell or a circuit board (such as a thermal head), and other photographic processing processes, Or a lithographic printing plate or an acid curable composition; a resist film and a pattern forming method using the composition, respectively; and a method of manufacturing an electronic component and an electronic component.

化學增幅抗蝕劑組成物為圖案形成物質,其藉由經諸如遠紫外光的放射線照射後在曝光區域中製造酸,並經由使用此酸作為催化劑的反應來改變經光化放射線照射區域及未照射區域對顯影劑的溶解性,而在基底上形成圖案。 The chemical amplification resist composition is a pattern forming substance which is formed by irradiating radiation such as far ultraviolet light to produce an acid in an exposed region, and changing the irradiated radiation irradiation region by using a reaction using the acid as a catalyst The irradiation area is soluble in the developer, and a pattern is formed on the substrate.

在使用KrF準分子電射作為曝光光源的案例中,主要使用在248奈米之波長區域中具有小的吸收且以聚(羥基苯乙烯)為基本骨幹的樹脂作為主要組分,且因此相較於習知的萘醌二疊氮化物(naphthoquinone-diazide)/酚醛清漆樹脂(novolak)系統而言,是一種優異系統,能夠形成具有高靈敏度及高解析度之優良圖案。 In the case of using KrF excimer electroluminescence as an exposure light source, a resin having a small absorption in a wavelength region of 248 nm and having a poly(hydroxystyrene) as a basic backbone is mainly used as a main component, and thus In the conventional naphthoquinone-diazide/novolak system, it is an excellent system capable of forming an excellent pattern with high sensitivity and high resolution.

另一方面,因為具有芳香族基的化合物於193奈米的區域中實質上具有大的吸收,故在發射光之光源的波長較 短的案例中,例如以ArF準分子雷射(193奈米)作為曝光光源時,即使藉由上述化學增幅抗系統仍無法形成令人滿意的圖案。為解決此問題,已發展出多種與ArF準分子雷射一起使用,且包含具脂環烴結構之樹脂的抗蝕劑組成物。 On the other hand, since the compound having an aromatic group has substantially a large absorption in a region of 193 nm, the wavelength of the light source emitting light is higher. In a short case, for example, when an ArF excimer laser (193 nm) is used as an exposure light source, a satisfactory pattern cannot be formed even by the above chemical amplification system. To solve this problem, various resist compositions which are used together with an ArF excimer laser and which contain a resin having an alicyclic hydrocarbon structure have been developed.

又,就上述化學增幅抗蝕劑組成物的主要構成組分(光酸產生劑)來說,已開發各種化合物。舉例而言,JP-A-2005-308969(本文所使用之詞彙「JP-A」意指未審定之日本專利申請案)所描述之由具有吲哚基或相似物的鋶鹽所組成的光酸產生劑、JP-A-2010-235579所描述之由具有咔唑結構之芳香族鋶鹽化合物所組成的光酸產生劑、以及JP-A-2006-99024所描述之用於抗蝕劑組成物的化合物(其包含多個鋶結構)。 Further, various compounds have been developed in view of the main constituent components (photoacid generators) of the above chemically amplified resist composition. For example, JP-A-2005-308969 (the term "JP-A" as used herein means an unexamined Japanese patent application) is a light consisting of a sulfonium salt having a sulfhydryl group or a similar substance. An acid generator, a photoacid generator composed of an aromatic sulfonium salt compound having a carbazole structure, and a resist composition described in JP-A-2006-99024, as described in JP-A-2010-235579 Compound of matter (which contains a plurality of ruthenium structures).

然而,由作為抗蝕劑之整體效能的觀點來說,實際上非常的困難於發現適合使用之樹脂、光酸產生劑、鹼性化合物、添加物、溶劑及相似物的組合物,且現今的技術仍然是沒有效率的。舉例而言,需要開發確保優異的曝光靈敏度及少的顯影缺陷的抗蝕劑組成物。 However, from the viewpoint of the overall performance of the resist, it is actually very difficult to find a suitable combination of a resin, a photoacid generator, a basic compound, an additive, a solvent, and the like, and nowadays Technology is still inefficient. For example, there is a need to develop a resist composition that ensures excellent exposure sensitivity and few development defects.

考慮這些背景,本發明之目的為提供確保優異的曝光靈敏度及少的顯影缺陷之感光化射線性或感放射線性樹脂組成物、分別使用此組成物的抗蝕劑膜及圖案形成方法、電子元件的製造方法及電子元件。 In view of the above, an object of the present invention is to provide a sensitized ray-sensitive or radiation-sensitive resin composition which ensures excellent exposure sensitivity and low development defects, a resist film and pattern forming method using the same, and an electronic component. Manufacturing method and electronic components.

[1]一種感光化射線性或感放射線性樹脂組成物,包 括:化合物(A),其由下式(I)代表;以及樹脂(B): [1] A photosensitive ray-sensitive or radiation-sensitive resin composition comprising: a compound (A) represented by the following formula (I); and a resin (B):

其中X代表氧原子、硫原子或-N(Rx)-;R1至R8及RX各獨立代表氫原子、烷基、環烷基、烷氧基、烷氧基羰基、醯基、烷基羰氧基、芳基、芳氧基、芳氧基羰基或芳基羰氧基;以及R1至R8可彼此結合以形成環;其限制條件為至少兩個由R1至R8中選出的成員代表由下式(II)代表的結構: Wherein X represents an oxygen atom, a sulfur atom or -N(Rx)-; R 1 to R 8 and R X each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an alkoxy group, an alkoxycarbonyl group, a decyl group or an alkane group. a carbonyloxy group, an aryl group, an aryloxy group, an aryloxycarbonyl group or an arylcarbonyloxy group; and R 1 to R 8 may be bonded to each other to form a ring; the limitation is that at least two are from R 1 to R 8 The selected members represent the structure represented by the following formula (II):

其中當X為氧原子或硫原子時,R9及R10各獨立代表烷基、環烷基或芳基;而當X為-N(Rx)-時,R9及R10各獨立代表烷基或環烷基;且各R9及各R10可分別相同於或不同於每個其他的R9及每個其他的R10; R9及R10可彼此結合以形成環;以及Z-代表非親核性陰離子,各Z-可相同於或不同於每個其他的Z-,且多個Z-可結合以形成多價的非親核性陰離子。 Wherein when X is an oxygen atom or a sulfur atom, R 9 and R 10 each independently represent an alkyl group, a cycloalkyl group or an aryl group; and when X is -N(Rx)-, R 9 and R 10 each independently represent an alkane. or a cycloalkyl group; and each R 9 and each R 10 may be the same or different from each other and each of the other R 9 R 10; R 9 and R 10 may be bonded to each other to form a ring; and Z - Representing a non-nucleophilic anion, each Z - may be the same or different from each other Z - and a plurality of Z - may be combined to form a multivalent non-nucleophilic anion.

[2]如以上[1]中所描述之感光化射線性或感放射線性樹脂組成物,其中式(II)中的Z-為磺酸根陰離子。 [2] A photosensitive ray-sensitive or radiation-sensitive resin composition as described in [1] above, wherein Z - in the formula (II) is a sulfonate anion.

[3]如以上[2]中所描述之感光化射線性或感放射線性樹脂組成物,其中式(II)中的Z-是由下式(III)表示的陰離子: [3] The photosensitive ray-sensitive or radiation-sensitive resin composition as described in the above [2], wherein Z - in the formula (II) is an anion represented by the following formula (III):

其中各Xf獨立代表氟原子或經至少一個氟原子取代的烷基;R11及R12各獨立代表氫原子、氟原子、烷基或經至少一個氟原子取代的烷基,且當多個R11及多個R12存在時,各R11及各R12可分別相同於或不同於每個其他的R11及每個其他的R12;L代表二價連結基,且及當多個L存在時,各L可相同於或不同於每個其他的L;A代表環狀有機基;以及x代表1至20的整數,y代表0至10的整數及z代表0至10的整數。 Wherein each Xf independently represents a fluorine atom or an alkyl group substituted with at least one fluorine atom; and R 11 and R 12 each independently represent a hydrogen atom, a fluorine atom, an alkyl group or an alkyl group substituted with at least one fluorine atom, and when a plurality of R When 11 and a plurality of R 12 are present, each R 11 and each R 12 may be the same as or different from each of the other R 11 and each of the other R 12 ; L represents a divalent linking group, and when a plurality of L When present, each L may be the same or different from each other L; A represents a cyclic organic group; and x represents an integer from 1 to 20, y represents an integer from 0 to 10, and z represents an integer from 0 to 10.

[4]如以上[1]至[3]之任一者中所描述之感光化射線 性或感放射線性樹脂組成物,其中式(II)中的R9及R10各自獨立,為烷基或環烷基,且R9及R10可彼此結合以形成環。 [4] The photosensitive ray-sensitive or radiation-sensitive resin composition described in any one of the above [1] to [3], wherein R 9 and R 10 in the formula (II) are each independently an alkyl group. Or a cycloalkyl group, and R 9 and R 10 may be bonded to each other to form a ring.

[5]如以上[1]至[4]之任一者中所描述之感光化射線性或感放射線性樹脂組成物,其中使式(II)中的R9及R10結合以形成環。 [5] The sensitized ray-sensitive or radiation-sensitive resin composition described in any one of [1] to [4] above, wherein R 9 and R 10 in the formula (II) are combined to form a ring.

[6]如以上[1]至[5]之任一者中所描述之感光化射線性或感放射線性樹脂組成物,其中X代表-N(Rx)-,式(I)中的Rx為各自具有由式(II)代表之結構作為取代基之烷基、環烷基或芳基,且至少一個由R1至R8中選出的成員為式(II)代表之結構。 [6] The photosensitive ray-sensitive or radiation-sensitive resin composition described in any one of [1] to [5] above, wherein X represents -N(Rx)-, and Rx in the formula (I) is The alkyl group, the cycloalkyl group or the aryl group each having a structure represented by the formula (II) as a substituent, and at least one member selected from R 1 to R 8 is a structure represented by the formula (II).

[7]如以上[1]至[6]之任一者中所描述之感光化射線性或感放射線性樹脂組成物,其中樹脂(B)為能夠藉由酸的作用而分解以增加樹脂(B)在鹼性顯影液中之溶解性的樹脂。 [7] The photosensitive ray-sensitive or radiation-sensitive resin composition as described in any one of the above [1] to [6] wherein the resin (B) is decomposed by an action of an acid to increase the resin ( B) A resin that is soluble in an alkaline developer.

[8]一種抗蝕性膜,其藉由使用如以上[1]至[7]之任一者中所描述之感光化射線性或感放射線性樹脂組成物而形成。 [8] A resist film formed by using a photosensitive ray-sensitive or radiation-sensitive resin composition as described in any one of the above [1] to [7].

[9]一種圖案形成方法,包括:將以上[8]中所描述之抗蝕劑膜曝光,藉此形成經曝光的抗蝕劑膜的步驟;以及將經曝光的抗蝕劑膜顯影的步驟。 [9] A pattern forming method comprising: exposing the resist film described in the above [8], thereby forming an exposed resist film; and developing the exposed resist film .

[10]如以上[9]中所描述之圖案形成方法,其中曝光的方法為液浸曝光(immersion exposure)。 [10] The pattern forming method as described in [9] above, wherein the method of exposing is immersion exposure.

[11]一種電子元件的製造方法,包括:如以上[9]或[10]中所描述之圖案形成方法。 [11] A method of producing an electronic component, comprising: the pattern forming method as described in [9] or [10] above.

[12]一種電子元件,其以如以上[11]中所描述之電子元件的製造方法製造之。 [12] An electronic component manufactured by the method of manufacturing an electronic component as described in the above [11].

本發明較佳更包括下列組態。 The present invention preferably further includes the following configurations.

[13]如以上[1]至[7]之任一者中所描述之感光化射線性或感放射線性樹脂組成物,其中樹脂(B)包含具有內酯結構或磺內酯(sultone)結構的重複單元。 [13] The photosensitive ray-sensitive or radiation-sensitive resin composition as described in any one of the above [1] to [7] wherein the resin (B) comprises a lactone structure or a sultone structure. Repeat unit.

[14]如以上[1]至[7]及[13]之任一者中所描述之感光化射線性或感放射線性樹脂組成物,更包括:疏水性樹脂(HR)。 [14] The sensitizing ray-sensitive or radiation-sensitive resin composition described in any one of the above [1] to [7] and [13], further comprising: a hydrophobic resin (HR).

[15]如以上[14]中所描述之感光化射線性或感放射線性樹脂組成物,其中疏水性樹脂(HR)為具有氟原子或矽原子之至少一者的疏水性樹脂。 [15] The photosensitive ray-sensitive or radiation-sensitive resin composition as described in [14] above, wherein the hydrophobic resin (HR) is a hydrophobic resin having at least one of a fluorine atom or a ruthenium atom.

[16]如以上[9]或[10]中所描述之圖案形成方法,其中曝光為ArF準分子雷射型曝光。 [16] The pattern forming method as described in [9] or [10] above, wherein the exposure is an ArF excimer laser type exposure.

在本說明書中,當基團(原子基團)在未規定其經取代或未經取代下表示時,所述基團包括無取代基之基團及具有取代基之基團兩者。舉例而言,「烷基」不僅包括不具有取代基之烷基(未經取代之烷基),亦包括具有取代基之烷基(經取代之烷基)。 In the present specification, when a group (atomic group) is represented by a substituent or a substitution thereof, the group includes both a group having no substituent and a group having a substituent. For example, "alkyl" includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).

在本說明書中,詞彙「光化射線」或「放射線」表示 例如汞燈的明線光譜、以準分子雷射為代表的遠紫外光、極紫外光(EUV光)、X射線或電子束(electron beam,EB)。又在本說明書中,「光」(light)意指光化性射線或放射線。 In this specification, the term "actinic ray" or "radiation" means For example, a bright line spectrum of a mercury lamp, a far-ultraviolet light represented by an excimer laser, an extreme ultraviolet light (EUV light), an X-ray or an electron beam (EB). In the present specification, "light" means actinic rays or radiation.

在本發明中,除非另外表示之,否則「曝光」不僅包括以汞燈、以準分子雷射為代表的遠紫外光、X射線、EUV光或其相似光源進行曝光,亦包括以諸如電子束或離子束之粒子束的微影法進行曝光。 In the present invention, unless otherwise indicated, "exposure" includes not only exposure with a mercury lamp, far-ultraviolet light typified by a excimer laser, X-ray, EUV light, or the like, but also includes, for example, an electron beam. Or exposure by lithography of the particle beam of the ion beam.

本發明之感光化射線性或感放射線性樹脂組成物包括:由下式(I)代表之化合物(A),其經光化射線或放射線照射後能夠產生酸(下文中,有些時候簡稱為「化合物(A)」或「光酸產生劑(A)」),以及樹脂(B): 其中在式(I)中,X代表氧原子、硫原子或-N(Rx)-;R1至R8及Rx各獨立代表氫原子、烷基、環烷基、烷氧基、烷氧基羰基、醯基、烷基羰氧基、芳基、芳氧基、芳氧基羰基或芳基羰氧基;以及R1至R8可彼此結合以形成環; 其限制條件為,至少兩個由R1至R8中選出的成員代表由下式(II)代表的結構: The sensitizing ray-sensitive or radiation-sensitive resin composition of the present invention comprises: a compound (A) represented by the following formula (I) which is capable of generating an acid upon irradiation with actinic rays or radiation (hereinafter, sometimes referred to as " Compound (A)" or "Photoacid generator (A)"), and resin (B): Wherein in formula (I), X represents an oxygen atom, a sulfur atom or -N(Rx)-; R 1 to R 8 and Rx each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an alkoxy group, an alkoxy group. a carbonyl group, a fluorenyl group, an alkylcarbonyloxy group, an aryl group, an aryloxy group, an aryloxycarbonyl group or an arylcarbonyloxy group; and R 1 to R 8 may be bonded to each other to form a ring; the limitation is that at least two The member selected from R 1 to R 8 represents a structure represented by the following formula (II):

其中在式(II)中,當X為氧原子或硫原子時,R9及R10各獨立代表烷基、環烷基或芳基;而當X為-N(Rx)-時,R9及R10各獨立代表烷基或環烷基;且各R9及各R10可分別相同於或不同於每個其他的R9及每個其他的R10;R9及R10可彼此結合以形成環;以及Z-代表非親核性陰離子,各Z-可相同於或不同於每個其他的Z-,且可結合多個Z-以形成多價的非親核性陰離子。 Wherein in formula (II), when X is an oxygen atom or a sulfur atom, R 9 and R 10 each independently represent an alkyl group, a cycloalkyl group or an aryl group; and when X is -N(Rx)-, R 9 And R 10 each independently represents an alkyl or cycloalkyl group; and each R 9 and each R 10 may be the same or different from each other R 9 and each other R 10 ; R 9 and R 10 may be bonded to each other To form a ring; and Z - represents a non-nucleophilic anion, each Z - may be the same or different from each other Z - and may combine a plurality of Z - to form a multivalent non-nucleophilic anion.

藉由包含化合物(A),本發明之感光化射線性或感放射線性樹脂組成物可以確保優異的高曝光靈敏度及少的顯影缺陷。雖然其原因並不非常地清楚,但推測是因為吸收光後的C-S+鍵的裂解及以高效率發生的激發,有助於提高靈敏度;而得益於多價離子化合物,化合物在鹼性顯影劑中展現優異的溶解性且較不容易成為顯影後的浮渣,此有助於減少顯影中的缺陷。 By including the compound (A), the photosensitive ray-sensitive or radiation-sensitive resin composition of the present invention can secure excellent high exposure sensitivity and low development defects. Although the reason is not very clear, it is presumed that the cleavage of the CS + bond after absorption of light and the excitation with high efficiency contribute to the improvement of sensitivity; and the compound is in alkaline development due to the multivalent ionic compound. The agent exhibits excellent solubility and is less likely to become dross after development, which helps to reduce defects in development.

本發明之感光化射線性或感放射線性樹脂組成物例如為正型組成物或典型為正型抗蝕劑組成物。 The sensitizing ray-sensitive or radiation-sensitive resin composition of the present invention is, for example, a positive type composition or a typical positive resist composition.

以下描述此組成物的個別組分。 The individual components of this composition are described below.

[1]由式(I)代表的化合物(A) [1] A compound represented by the formula (I) (A)

如上所述,本發明之感光化射線性或感放射線性樹脂組成物包含由(I)代表的化合物(A)。由式(I)代表的化合物(A)為經光化射線或放射線照射後能夠產生酸的化合物。 As described above, the photosensitive ray-sensitive or radiation-sensitive resin composition of the present invention contains the compound (A) represented by (I). The compound (A) represented by the formula (I) is a compound capable of generating an acid upon irradiation with actinic rays or radiation.

以下詳細描述由式(I)代表之經光化射線或放射線照射後能夠產生酸的化合物(A)。 The compound (A) capable of generating an acid after irradiation with actinic rays or radiation represented by the formula (I) will be described in detail below.

如R1至R10及Rx的烷基可具有取代基,且較佳為碳數為1至20的直鏈型或分支型烷基,且其烷鏈可包含氧原子、硫原子或氮原子。烷基具體包括直鏈型烷基,諸如甲基、乙基、正丙基、正丁基、正戊基、正己基、正辛基、正十二基、正十四基及正十八基;以及分支型烷基,諸如:異丙基、異丁基、第三丁基、新戊基(neopentyl group)及2-乙基己基(2-ethylhexyl group)。 The alkyl group such as R 1 to R 10 and Rx may have a substituent, and is preferably a linear or branched alkyl group having a carbon number of 1 to 20, and the alkyl chain thereof may contain an oxygen atom, a sulfur atom or a nitrogen atom. . The alkyl group specifically includes a linear alkyl group such as methyl, ethyl, n-propyl, n-butyl, n-pentyl, n-hexyl, n-octyl, n-dodecyl, n-tetradecyl and n-octadecyl. And branched alkyl groups such as: isopropyl, isobutyl, tert-butyl, neopentyl group and 2-ethylhexyl group.

Rx之具有取代基之烷基的實例包括氰基甲基、2,2,2-三氟乙基、甲氧基羰基甲基、以及乙氧基羰基甲基。 Examples of the alkyl group having a substituent of Rx include a cyanomethyl group, a 2,2,2-trifluoroethyl group, a methoxycarbonylmethyl group, and an ethoxycarbonylmethyl group.

R9及R10之具有取代基的烷基包括甲氧基乙基。 The alkyl group having a substituent of R 9 and R 10 includes a methoxyethyl group.

其他實例包括直鏈型或分支型烷基經環烷基取代的基團(例如,金剛烷基甲基(adamantylmethyl group)、金剛烷基、環己基乙基及樟腦殘基)。 Other examples include groups in which a linear or branched alkyl group is substituted with a cycloalkyl group (for example, an adamantylmethyl group, an adamantyl group, a cyclohexylethyl group, and a camphor residue).

作為R1至R10及Rx的環烷基可具有取代基且較佳為碳數為3至20的環烷基,且環烷基可在環內包含氧原子。環烷基的具體實例包括環丙基、環戊基、環己基、降莰基(norbornyl group)及金剛烷基。 The cycloalkyl group as R 1 to R 10 and Rx may have a substituent and is preferably a cycloalkyl group having a carbon number of 3 to 20, and the cycloalkyl group may contain an oxygen atom in the ring. Specific examples of the cycloalkyl group include a cyclopropyl group, a cyclopentyl group, a cyclohexyl group, a norbornyl group, and an adamantyl group.

作為R1至R8及Rx的烷氧基可具有取代基且較佳為 碳數為1至20的烷氧基。其具體實例包括甲氧基、乙氧基、異丙氧基及環己氧基。 The alkoxy group as R 1 to R 8 and Rx may have a substituent and is preferably an alkoxy group having a carbon number of 1 to 20. Specific examples thereof include a methoxy group, an ethoxy group, an isopropoxy group, and a cyclohexyloxy group.

作為R1至R8及Rx的烷氧基羰基可具有取代基且較佳為碳數為2至20的烷氧基羰基。其具體實例包括甲氧基羰基、乙氧基羰基、異丙氧基羰基及環己氧基羰基。 The alkoxycarbonyl group as R 1 to R 8 and Rx may have a substituent and is preferably an alkoxycarbonyl group having a carbon number of 2 to 20. Specific examples thereof include a methoxycarbonyl group, an ethoxycarbonyl group, an isopropoxycarbonyl group, and a cyclohexyloxycarbonyl group.

作為R1至R8及Rx的醯基可具有取代基且較佳為碳數為2至10的醯基。其具體實例包括乙醯基、丙醯基(propiony group)及異丁醯基(isobutyryl group)。 The fluorenyl group as R 1 to R 8 and Rx may have a substituent and is preferably a fluorenyl group having a carbon number of 2 to 10. Specific examples thereof include an ethenyl group, a propiony group, and an isobutyryl group.

作為R1至R8及Rx的烷基羰氧基可具有取代基且較佳為碳數為2至20的烷基羰氧基。其具體實例包括甲基羰氧基、乙基羰氧基、異丙基羰氧基及環己基羰氧基。 The alkylcarbonyloxy group as R 1 to R 8 and Rx may have a substituent and is preferably an alkylcarbonyloxy group having a carbon number of 2 to 20. Specific examples thereof include a methylcarbonyloxy group, an ethylcarbonyloxy group, an isopropylcarbonyloxy group, and a cyclohexylcarbonyloxy group.

作為R1至R10及Rx的芳基可具有取代基且較佳為碳數為6至14的芳基,且其實例包括苯基及萘基。 The aryl group as R 1 to R 10 and Rx may have a substituent and is preferably an aryl group having a carbon number of 6 to 14, and examples thereof include a phenyl group and a naphthyl group.

作為R1至R8及Rx的芳氧基可具有取代基且較佳為碳數為6至14的芳氧基,且其實例包括苯氧基及萘氧基。 The aryloxy group as R 1 to R 8 and Rx may have a substituent and is preferably an aryloxy group having a carbon number of 6 to 14, and examples thereof include a phenoxy group and a naphthyloxy group.

作為R1至R8及Rx的芳氧基羰基可具有取代基且較佳為碳數為7至15的芳氧基羰基,且其實例包括苯氧基羰基及萘氧基羰基。 The aryloxycarbonyl group as R 1 to R 8 and Rx may have a substituent and is preferably an aryloxycarbonyl group having a carbon number of 7 to 15, and examples thereof include a phenoxycarbonyl group and a naphthyloxycarbonyl group.

作為R1至R8及Rx的芳基羰氧基可具有取代基且較佳為碳數為7至15的芳基羰氧基,且其實例包括苯基羰氧基及萘基羰氧基。 The arylcarbonyloxy group as R 1 to R 8 and Rx may have a substituent and is preferably an arylcarbonyloxy group having a carbon number of 7 to 15, and examples thereof include a phenylcarbonyloxy group and a naphthylcarbonyloxy group. .

在作為R1至R10及Rx之環烷基、作為R1至R8及Rx之烷氧基、作為R1至R8及Rx之烷氧基羰基、作為R1至R8及Rx之烷基羰氧基、作為R1至R10及Rx之芳基、作 為R1至R8及Rx之芳香族基、作為R1至R8及Rx之芳氧基羰基、以及作為R1至R8及Rx之芳基羰氧基之各者上之取代基的實例包括烷基(可為直鏈型、分支型、或環狀,較佳碳數為1至12)、芳基(較佳碳數為6至14)、硝基、諸如氟原子之鹵素原子、羧基、羥基、胺基、氰基、烷氧基(較佳碳數為1至15)、環烷基(較佳碳數為3至15)、以及醯基(較佳碳數為2至12)。 As R 1 to R 10 and the cycloalkyl group Rx as R 1 to R 8 and the alkoxy group Rx as R 1 to R 8 and Rx of the alkoxycarbonyl group as R 1 to R 8 and the Rx alkylcarbonyloxy group, as R 1 to R 10 and the aryl group Rx as R 1 to R 8 and Rx of the aromatic group, as R 1 to R 8 and Rx of the aryloxycarbonyl group, and R 1 to a Examples of the substituent on each of the arylcarbonyloxy group of R 8 and Rx include an alkyl group (which may be a linear type, a branched form, or a cyclic form, preferably a carbon number of 1 to 12), and an aryl group (compared a preferred carbon number is 6 to 14), a nitro group, a halogen atom such as a fluorine atom, a carboxyl group, a hydroxyl group, an amine group, a cyano group, an alkoxy group (preferably having a carbon number of 1 to 15), a cycloalkyl group (preferably carbon) The number is 3 to 15), and the thiol group (preferably having a carbon number of 2 to 12).

特別地說,Rx可為烷基、環烷基或芳基,其各自具有由式(II)代表之結構作為取代基。 In particular, Rx may be an alkyl group, a cycloalkyl group or an aryl group each having a structure represented by the formula (II) as a substituent.

在本發明中,至少兩個由R1至R8中選出的成員代表由式(II)代表的結構。但在Rx為各自具有由式(II)代表之結構作為取代基的烷基、環烷基或芳基的案例中,R1至R8的至少一者可為由式(II)代表之結構。 In the present invention, at least two members selected from R 1 to R 8 represent a structure represented by the formula (II). However, in the case where Rx is an alkyl group, a cycloalkyl group or an aryl group each having a structure represented by the formula (II) as a substituent, at least one of R 1 to R 8 may be a structure represented by the formula (II) .

在本發明中,較佳使R9及R10結合以形成環。 In the present invention, it is preferred to combine R 9 and R 10 to form a ring.

使R9及R10彼此結合可形成的環結構為由二價之R9及R10(舉例而言,伸乙基、伸丙基或1,2-環伸己基及其相似物)與式(II)中之硫原子一起形成的5員環或6員環,較佳為5員環(亦即四氫噻吩環(tetrahydrothiophene ring))。 The ring structure which can be formed by combining R 9 and R 10 with each other is a divalent R 9 and R 10 (for example, an exoethyl, a propyl or a 1,2-cyclohexyl group and the like) and a formula The 5-membered or 6-membered ring formed by the sulfur atom in (II) is preferably a 5-membered ring (i.e., a tetrahydrothiophene ring).

將任意兩個或兩個以上由R1至R8中選出的成員彼此結合可形成的環結構較佳為5員環或6員環,更佳為6員環。 The ring structure formed by combining any two or more members selected from R 1 to R 8 with each other is preferably a 5-membered ring or a 6-membered ring, more preferably a 6-membered ring.

當X為氧原子或硫原子時,R9及R10各獨立代表烷基、環烷基或芳基,而當X為-N(Rx)-時,R9及R10各獨立 代表烷基或環烷基。 When X is an oxygen atom or a sulfur atom, R 9 and R 10 each independently represent an alkyl group, a cycloalkyl group or an aryl group, and when X is -N(Rx)-, R 9 and R 10 each independently represent an alkyl group. Or a cycloalkyl group.

在式(I)中的X為氧原子、硫原子或-N(Rx)-的每個案例中,較佳為式(II)中的R9及R10各獨立為烷基或環烷基,且R9及R10可彼此結合以形成環。 In each case where X in the formula (I) is an oxygen atom, a sulfur atom or -N(Rx)-, it is preferred that R 9 and R 10 in the formula (II) are each independently an alkyl group or a cycloalkyl group. And R 9 and R 10 may be bonded to each other to form a ring.

R1至R8之特別較佳的實例包括烷基,其可具有取代基及氫原子。但在使用如ArF抗蝕劑的案例中,由193奈米之吸收強度的立場來看,更佳為氫原子。 Particularly preferred examples of R 1 to R 8 include an alkyl group which may have a substituent and a hydrogen atom. However, in the case of using, for example, an ArF resist, from the viewpoint of the absorption strength of 193 nm, a hydrogen atom is more preferable.

Rx較佳為烷基。 Rx is preferably an alkyl group.

Z-代表非親核性陰離子(具有極低親核性反應之促成能力的陰離子),各Z-可相同於或不同於每個其他的Z-,且多個Z-可結合以形成多價的(舉例而言,至少為二價)非親核性陰離子。 Z - represents a non-nucleophilic anion (an anion having a very low nucleophilic reaction promoting ability), each Z - may be the same as or different from each other Z - , and a plurality of Z - may be combined to form a multivalent (for example, at least a divalent) non-nucleophilic anion.

Z-的實例包括磺酸根陰離子(諸如脂肪族磺酸根陰離子、芳香族磺酸根陰離子及樟腦磺酸根陰離子)、羧酸根陰離子(諸如脂肪族羧酸根陰離子、芳香族羧酸根陰離子及芳烷基羧酸根陰離子)、磺醯亞胺陰離子、雙(烷基磺醯基)醯亞胺陰離子及三(烷基磺醯基)甲基化物陰離子。 Examples of Z- include sulfonate anions (such as aliphatic sulfonate anions, aromatic sulfonate anions, and camphor sulfonate anions), carboxylate anions (such as aliphatic carboxylate anions, aromatic carboxylate anions, and aralkyl carboxylates). Anion), sulfonium imine anion, bis(alkylsulfonyl) quinone anion and tris(alkylsulfonyl)methide anion.

脂肪族磺酸根陰離子及脂肪族羧酸根陰離子中的脂肪族部分可為烷基或環烷基,且較佳為碳數為1至30的直鏈型或分支型烷基或碳數為3至30的環烷基。 The aliphatic moiety in the aliphatic sulfonate anion and the aliphatic carboxylate anion may be an alkyl group or a cycloalkyl group, and is preferably a linear or branched alkyl group having a carbon number of 1 to 30 or a carbon number of 3 to 30 cycloalkyl.

多個Z-結合以形成多價之非親核性陰離子之案例的實例包括兩個脂肪族磺酸根陰離子以脂肪族基部分結合以形成伸烷基或伸環烷基的實施例。 An example of a case where a plurality of Z - bonds are combined to form a multivalent non-nucleophilic anion includes an embodiment in which two aliphatic sulfonate anions are bonded in an aliphatic group moiety to form an alkylene group or a cycloalkyl group.

芳香族磺酸根陰離子及芳香族羧酸根陰離子中的芳香 族基較佳為碳數為6至14的芳基,且其實例包括苯基、甲苯基(tolyl group)及萘基。 Aroma of aromatic sulfonate anion and aromatic carboxylate anion The group group is preferably an aryl group having a carbon number of 6 to 14, and examples thereof include a phenyl group, a tolyl group, and a naphthyl group.

上述烷基、環烷基及芳基可具有取代基。取代基的具體實例包括硝基、諸如氟原子的鹵素原子、羧基、羥基、胺基、氰基、烷氧基(較佳碳數為1至15)、環烷基(較佳碳數為3至15)、芳基(較佳碳數為6至14)、烷氧基羰基(較佳碳數為2至7)、醯基(較佳碳數為2至12)、烷氧基羰氧基(較佳碳數為2至7)、烷硫基(較佳碳數為1至15)、烷基磺醯基(較佳碳數為1至15)、烷基亞胺基磺醯基(較佳碳數為2至15)、芳氧基磺醯基(較佳碳數為6至20)、烷基芳氧基磺醯基(較佳碳數為7至20)、環烷基芳氧基磺醯基(較佳碳數為10至20)、烷氧基烷氧基(較佳碳數為5至20)、環烷基烷氧基烷氧基(較佳碳數為8至20)。各基團中的芳基及環結構可更具有烷基(較佳碳數為1至15)作為取代基。 The above alkyl group, cycloalkyl group and aryl group may have a substituent. Specific examples of the substituent include a nitro group, a halogen atom such as a fluorine atom, a carboxyl group, a hydroxyl group, an amine group, a cyano group, an alkoxy group (preferably having a carbon number of 1 to 15), and a cycloalkyl group (preferably having a carbon number of 3) To 15), an aryl group (preferably having a carbon number of 6 to 14), an alkoxycarbonyl group (preferably having a carbon number of 2 to 7), a mercapto group (preferably having a carbon number of 2 to 12), an alkoxycarbonyloxy group a base (preferably having a carbon number of 2 to 7), an alkylthio group (preferably having a carbon number of 1 to 15), an alkylsulfonyl group (preferably having a carbon number of 1 to 15), and an alkylimidosulfonyl group. (preferably having a carbon number of 2 to 15), an aryloxysulfonyl group (preferably having a carbon number of 6 to 20), an alkylaryloxysulfonyl group (preferably having a carbon number of 7 to 20), a cycloalkyl group An aryloxysulfonyl group (preferably having a carbon number of 10 to 20), an alkoxyalkoxy group (preferably having a carbon number of 5 to 20), a cycloalkyl alkoxyalkoxy group (preferably having a carbon number of 8) To 20). The aryl group and ring structure in each group may further have an alkyl group (preferably having a carbon number of 1 to 15) as a substituent.

芳烷基羧酸根陰離子中的芳烷基較佳為碳數為7至12的芳烷基,且其實例包括苄基、苯乙基、萘甲基、萘乙基及萘丁基。 The aralkyl group in the aralkylcarboxylate anion is preferably an aralkyl group having a carbon number of 7 to 12, and examples thereof include a benzyl group, a phenethyl group, a naphthylmethyl group, a naphthylethyl group, and a naphthylbutyl group.

磺醯亞胺陰離子的實例包括糖精(saccharin)陰離子。 Examples of the sulfonium imine anion include a saccharin anion.

雙(烷基磺醯基)醯亞胺陰離子及三(烷基磺醯基)甲基化物陰離子中的烷基較佳為碳數為1至5的烷基。 The alkyl group in the bis(alkylsulfonyl)phosphonium anion and the tris(alkylsulfonyl)methide anion is preferably an alkyl group having 1 to 5 carbon atoms.

雙(烷基磺醯基)醯亞胺陰離子中的兩個烷基可結合以形成伸烷基(較佳碳數為2至4)且可與醯亞胺基(imido group)及兩個磺醯基一起形成環。可藉由雙(烷基磺醯基) 醯亞胺陰離子形成的環結構較佳為5員環至7員環,更佳為6員環。 The two alkyl groups in the bis(alkylsulfonyl) quinone imine anion can be combined to form an alkylene group (preferably having a carbon number of 2 to 4) and can be combined with an imido group and two sulfonates. The sulfhydryl groups together form a ring. Bis(alkylsulfonyl) The ring structure formed by the quinone imine anion is preferably a 5-membered ring to a 7-membered ring, more preferably a 6-membered ring.

藉由結合雙(烷基磺醯基)醯亞胺陰離子中的兩個烷基所形成之烷基及伸烷基上之取代基的實例包括鹵素原子、經鹵素原子取代的烷基、烷氧基、烷硫基、烷氧基磺醯基、芳氧基磺醯基及環烷基芳氧基磺醯基,以氟及經氟原子取代的烷基為較佳。 Examples of the alkyl group formed by combining two alkyl groups in the bis(alkylsulfonyl) quinone imine anion and the substituent on the alkyl group include a halogen atom, an alkyl group substituted by a halogen atom, and an alkoxy group. The alkyl group, the alkylthio group, the alkoxysulfonyl group, the aryloxysulfonyl group and the cycloalkylaryloxysulfonyl group are preferably a fluorine atom and an alkyl group substituted with a fluorine atom.

Z-的其他實例包括氟化磷(例如PF6 -)、氟化硼(例如BF4 -)及氟化銻(例如SbF6 -)。 Other examples of Z - include phosphorus fluoride (e.g., PF 6 - ), boron fluoride (e.g., BF 4 - ), and cesium fluoride (e.g., SbF 6 - ).

Z-較佳為至少在磺酸的α位經氟原子取代之脂肪族磺酸根陰離子、經氟原子或含氟原子的基團所取代的芳香族磺酸根陰離子、烷基經氟原子取代的雙(烷基磺醯基)醯亞胺陰離子或者烷基經氟原子取代的三(烷基磺醯基)甲基化物陰離子。非親核性陰離子更佳為全氟脂肪族磺酸根陰離子(更佳碳數為4至8)或具有氟原子的苯磺酸根陰離子,再更佳為九氟丁磺酸根陰離子、全氟辛磺酸根陰離子、五氟苯磺酸根陰離子、或者3,5-雙(三氟甲基)苯磺酸根陰離子。 Z - is preferably an aliphatic sulfonate anion substituted with a fluorine atom at least in the α position of the sulfonic acid, an aromatic sulfonate anion substituted with a fluorine atom or a fluorine atom-containing group, and a double alkyl group substituted by a fluorine atom A (alkylsulfonyl) anthracene anion or a tris(alkylsulfonyl)methide anion having an alkyl group substituted with a fluorine atom. The non-nucleophilic anion is more preferably a perfluoroaliphatic sulfonate anion (more preferably 4 to 8 carbon atoms) or a benzenesulfonate anion having a fluorine atom, more preferably a nonafluorobutanesulfonate anion or a perfluorooctanesulfonate. An acid anion, a pentafluorobenzenesulfonate anion, or a 3,5-bis(trifluoromethyl)benzenesulfonate anion.

就酸強度而言,所產生之酸的pKa較佳為-1或-1以下,藉此提高靈敏度。 In terms of acid strength, the pKa of the acid produced is preferably -1 or -1 or less, thereby improving sensitivity.

特別佳的Z-包括下列陰離子結構。 Particularly preferred Z - includes the following anionic structures.

在式(III)中,各Xf獨立代表氟原子或經至少一個氟原子取代的烷基。 In the formula (III), each Xf independently represents a fluorine atom or an alkyl group substituted with at least one fluorine atom.

R11及R12各獨立代表氫原子、氟原子、烷基或經至少一個氟原子取代的烷基,且當多個R11及多個R12存在時,各R11及各R12可分別相同於或不同於每個其他的R11及每個其他的R12R 11 and R 12 each independently represent a hydrogen atom, a fluorine atom, an alkyl group or an alkyl group substituted with at least one fluorine atom, and when a plurality of R 11 and a plurality of R 12 are present, each R 11 and each R 12 may be respectively Same or different from each other R 11 and each other R 12 .

L代表二價連結基,且當多個L存在時,各L可相同於或不同於每個其他的L。 L represents a divalent linking group, and when a plurality of L are present, each L may be the same as or different from each other L.

A代表環狀有機基。 A represents a cyclic organic group.

X代表1至20的整數,y代表0至10的整數,以及z代表0至10的整數。 X represents an integer of 1 to 20, y represents an integer of 0 to 10, and z represents an integer of 0 to 10.

以下詳細描述式(III)的陰離子。 The anion of formula (III) is described in detail below.

Xf為氟原子或經至少一個氟原子取代的烷基,且經氟原子取代之烷基中的烷基較佳為碳數為1至10的烷基,更佳為碳數為1至4的烷基。又,Xf之經氟原子取代的烷基較佳為全氟烷基。 Xf is a fluorine atom or an alkyl group substituted with at least one fluorine atom, and the alkyl group in the alkyl group substituted by a fluorine atom is preferably an alkyl group having 1 to 10 carbon atoms, more preferably 1 to 4 carbon atoms. alkyl. Further, the alkyl group substituted with a fluorine atom of Xf is preferably a perfluoroalkyl group.

Xf較佳為氟原子或碳數為1至4的全氟烷基。具體實例包括氟原子CF3、C2F5、C3F7、C4F9、C5F11、C6F13、C7F15、C8F17、CH2CF3、CH2CH2CF3、CH2C2F5、CH2CH2C2F5、CH2C3F7、CH2CH2C3F7、CH2C4F9及CH2CH2C4F9,以氟原子及CF3為較佳。特別地說,較佳為兩個Xf皆為氟原子。 Xf is preferably a fluorine atom or a perfluoroalkyl group having a carbon number of 1 to 4. Specific examples include fluorine atoms CF 3 , C 2 F 5 , C 3 F 7 , C 4 F 9 , C 5 F 11 , C 6 F 13 , C 7 F 15 , C 8 F 17 , CH 2 CF 3 , CH 2 CH 2 CF 3 , CH 2 C 2 F 5 , CH 2 CH 2 C 2 F 5 , CH 2 C 3 F 7 , CH 2 CH 2 C 3 F 7 , CH 2 C 4 F 9 and CH 2 CH 2 C 4 F 9 is preferably a fluorine atom or CF 3 . In particular, it is preferred that both Xf are fluorine atoms.

R11及R12各自獨立代表氫原子、氟原子或烷基,而烷基可具有取代基(較佳為氟原子)且較佳為碳數為1至4的烷基,更佳為碳數為1至4的全氟烷基。R11及R12之具 有取代基之烷基的具體實例包括CF3、C2F5、C3F7、C4F9、C5F11、C6F13、C7F15、C8F17、CH2CF3、CH2CH2CF3、CH2C2F5、CH2CH2C2F5、CH2C3F7、CH2CH2C3F7、CH2C4F9及CH2CH2C4F9,以CF3為較佳。 R 11 and R 12 each independently represent a hydrogen atom, a fluorine atom or an alkyl group, and the alkyl group may have a substituent (preferably a fluorine atom) and is preferably an alkyl group having a carbon number of 1 to 4, more preferably a carbon number. It is a 1 to 4 perfluoroalkyl group. Specific examples of the alkyl group having a substituent of R 11 and R 12 include CF 3 , C 2 F 5 , C 3 F 7 , C 4 F 9 , C 5 F 11 , C 6 F 13 , C 7 F 15 , C 8 F 17 , CH 2 CF 3 , CH 2 CH 2 CF 3 , CH 2 C 2 F 5 , CH 2 CH 2 C 2 F 5 , CH 2 C 3 F 7 , CH 2 CH 2 C 3 F 7 , CH 2 C 4 F 9 and CH 2 CH 2 C 4 F 9 are preferably CF 3 .

L代表二價連結基,且其實例包括-COO-、-OCO-、-CO-、-O-、-S-、-SO-、-SO2-、-N(Ri)-(其中Ri代表氫原子或烷基)、伸烷基、伸環烷基、伸烯基、以及藉由結合多個這些成員所形成的二價連結基。其中,較佳為-COO-、-OCO-、-CO-、-SO2-、-CON(Ri)-、-SO2N(Ri)-、CON(Ri)-伸烷基-及-COO-伸烷基-,而更佳為-COO-、-OCO-、-SO2-、-CON(Ri)-及-SO2N(Ri)-。在多個L存在的案例中,各L可相同於或不同於每個其他的L。 L represents a divalent linking group, and examples thereof include -COO-, -OCO-, -CO-, -O-, -S-, -SO-, -SO 2 -, -N(Ri)- (where Ri represents A hydrogen atom or an alkyl group, an alkyl group, a cycloalkyl group, an alkenyl group, and a divalent linking group formed by combining a plurality of these members. Among them, preferred are -COO-, -OCO-, -CO-, -SO 2 -, -CON(Ri)-, -SO 2 N(Ri)-, CON(Ri)-alkylene- and -COO -alkyl-, and more preferably -COO-, -OCO-, -SO 2 -, -CON(Ri)-, and -SO 2 N(Ri)-. In the case where multiple Ls exist, each L may be the same as or different from each other L.

Ri之烷基的具體實例及較佳實例相同於上述R1至R10及Rx的具體實例及較佳實例。 Specific examples and preferred examples of the alkyl group of Ri are the same as the specific examples and preferred examples of the above R 1 to R 10 and Rx.

A的環狀有機基不受特別限制,只要其具有環狀結構即可,具其實例包括脂環基、芳基、雜環基(不僅包括具有芳香屬性者,亦包括不具有芳香屬性者,例如包括四氫吡喃環及內酯環結構)。 The cyclic organic group of A is not particularly limited as long as it has a cyclic structure, and examples thereof include an alicyclic group, an aryl group, and a heterocyclic group (including not only those having an aromatic character but also those having no aromatic character, For example, it includes a tetrahydropyran ring and a lactone ring structure).

脂環基可為單環或多環,且較佳為諸如環戊基、環己基及環辛基之單環環烷基、或者諸如降莰基、降莰烯基(norbornenyl group)、三環癸基(tricyclodecanyl)(例如,三環[5.2.1.02,6]癸基)、四環癸基、四環十二烷基(tetracyclododecyl)及金剛烷基之多環環烷基。亦較佳為諸如哌啶基(piperidine group)、十氫喹啉基(decahydro quinoline group)及十氫異喹啉基(decahydroisoquinoline group)之含氮原子的脂環基。其中,由抑制在曝光後加熱(post exposure baking,PEB)步驟中之膜中擴散性及提高曝光寬容度(exposure latitude)的立場來說,較佳為碳數為7或7以上之具有大體積結構的脂環基,其諸如降莰基、三環癸基、四環癸基、四環十二烷基、金剛烷基、十氫喹啉基及十氫異喹啉基。 The alicyclic group may be monocyclic or polycyclic, and is preferably a monocyclic cycloalkyl group such as a cyclopentyl group, a cyclohexyl group and a cyclooctyl group, or a fluorenyl group, a norbornenyl group, a tricyclic ring. Tricyclodecanyl (for example, tricyclo [5.2.1.0 2,6 ] fluorenyl), tetracyclic fluorenyl, tetracyclododecyl, and adamantyl polycyclic cycloalkyl. Also preferred are nitrogen atom-containing alicyclic groups such as piperididine group, decahydro quinoline group and decahydroisoquinoline group. Among them, from the standpoint of suppressing the diffusibility in the film in the post exposure baking (PEB) step and increasing the exposure latitude, it is preferably a large volume having a carbon number of 7 or more. A structural alicyclic group such as a norbornyl group, a tricyclodecyl group, a tetracyclic fluorenyl group, a tetracyclododecyl group, an adamantyl group, a decahydroquinolyl group, and a decahydroisoquinolyl group.

芳基包括苯環、萘環、菲環及蔥環。在這些芳基之中,以193奈米之光的吸收度的觀點來看,較佳為低吸收度的萘。 The aryl group includes a benzene ring, a naphthalene ring, a phenanthrene ring, and an onion ring. Among these aryl groups, naphthalene having a low absorbance is preferred from the viewpoint of the absorbance of light of 193 nm.

雜環基包括呋喃環、噻吩(thiophene)環、苯并呋喃(benzofuran)環、苯并噻吩(benzothiophene)環、二苯并呋喃(dibenzofuran)環、二苯并噻吩(dibenzothiophene)環、以及吡啶(pyridine)環。在這些雜環基之中,較佳為呋喃環、噻吩環、以及吡啶環。 The heterocyclic group includes a furan ring, a thiophene ring, a benzofuran ring, a benzothiophene ring, a dibenzofuran ring, a dibenzothiophene ring, and pyridine ( Pyridine) ring. Among these heterocyclic groups, a furan ring, a thiophene ring, and a pyridine ring are preferred.

上述環狀有機基可具有取代基,且取代基的實例包括烷基(可為直鏈型、分支型或環狀,較佳碳數為1至12)、芳基(較佳碳數為6至14)、羥基、烷氧基、酯基、醯胺基(amido group)、胺基甲酸酯基(urethane group)、脲基(ureido group)、硫醚基、磺醯胺基、以及磺酸酯基。 The above cyclic organic group may have a substituent, and examples of the substituent include an alkyl group (which may be a linear type, a branched type or a cyclic form, preferably a carbon number of 1 to 12), and an aryl group (preferably having a carbon number of 6) To 14), hydroxy, alkoxy, ester, amido group, urethane group, ureido group, thioether group, sulfonamide group, and sulfonate Acid ester group.

順帶一提,構成環狀有機基的碳(有助於形成環的碳)可為羰基碳。 Incidentally, the carbon constituting the cyclic organic group (the carbon contributing to the formation of the ring) may be a carbonyl carbon.

x較佳為1至8,更佳為1至4,再更佳為1。y較佳為0至4,更佳為0至1,再更佳為0。z較佳為0至8, 更佳為0至4,再更佳為1。 x is preferably from 1 to 8, more preferably from 1 to 4, still more preferably 1. y is preferably from 0 to 4, more preferably from 0 to 1, still more preferably 0. z is preferably 0 to 8, More preferably 0 to 4, still more preferably 1.

化合物(A)的磺酸根陰離子結構的較佳實施例(如由附加有氫的磺酸結構所示之實例)包括下列式(IIIa)。在式(IIIa)中,Xf、R11、R12、L、A、y及z具有與式(III)中之彼等者的相同意義。 A preferred embodiment of the sulfonate anion structure of the compound (A) (as exemplified by the sulfonic acid structure to which hydrogen is added) includes the following formula (IIIa). In the formula (IIIa), Xf, R 11 , R 12 , L, A, y and z have the same meanings as those of the formula (III).

以下繪示由式(I)代表之化合物(A)的較佳具體實例,但本發明不受其限制。在式中,Me代表甲基。 Preferred specific examples of the compound (A) represented by the formula (I) are shown below, but the invention is not limited thereto. In the formula, Me represents a methyl group.

可以使用一般的磺酸酯化反應或者磺醯胺化反應來合成由式(III)代表之磺酸根陰離子或其鹽類(例如,鎓鹽或金屬鹽)。舉例而言,可藉由以下方法來獲得前述化合物:使雙磺醯鹵(bis-sulfonyl halide)化合物的一個磺醯鹵化物部分選擇性地與胺、醇、醯胺化合物或相似物進行反應以形成磺醯胺鍵、磺酸酯鍵或磺醯亞胺鍵,然後將其他的磺醯鹵化物部分進行水解的方法;或者藉由胺、醇或醯胺化合物使環狀磺酸酐開環的方法。 The sulfonate anion represented by the formula (III) or a salt thereof (for example, a phosphonium salt or a metal salt) can be synthesized by a general sulfonation reaction or a sulfonylation reaction. For example, the foregoing compound can be obtained by reacting a sulfonium halide moiety of a bis-sulfonyl halide compound selectively with an amine, an alcohol, a guanamine compound or the like. a method of forming a sulfonamide bond, a sulfonate bond or a sulfonium imide bond, and then hydrolyzing other sulfonium halide moieties; or a method of ring-opening a cyclic sulfonic anhydride by an amine, an alcohol or a guanamine compound .

由式(III)中代表之磺酸的鹽類包括磺酸的金屬鹽及磺酸鎓鹽。磺酸之金屬鹽中之金屬的實例包括Na+、Li+及K+。磺酸鎓鹽中的鎓陽離子的實例包括銨陽離子、鋶陽離子、錪陽離子、鏻陽離子、以及重氮鎓陽離子。 The salts of the sulfonic acid represented by the formula (III) include metal salts of sulfonic acids and phosphonium sulfonates. Examples of the metal in the metal salt of a sulfonic acid include Na + , Li + , and K + . Examples of the phosphonium cation in the phosphonium sulfonate salt include an ammonium cation, a phosphonium cation, a phosphonium cation, a phosphonium cation, and a diazonium cation.

可以將由式(III)代表之磺酸根陰離子或其鹽類使用於合成由式(I)代表之化合物(A)的用途上。 The sulfonate anion represented by the formula (III) or a salt thereof can be used for the synthesis of the compound (A) represented by the formula (I).

可藉由將由式(III)代表之磺酸根陰離子與諸如對應於式(I)中之鋶陽離子之鋶鹽的光活性鎓鹽進行鹽交換的方法來合成化合物(A)。 The compound (A) can be synthesized by a salt exchange method of a sulfonate anion represented by the formula (III) with a photoactive sulfonium salt such as a phosphonium salt corresponding to the phosphonium cation in the formula (I).

在本發明的感光化射線性或感放射線性樹脂組成物中,作為化合物(A),可單獨使用一種化合物或組合使用兩種或兩種以上的化合物。以組成物的總固體含量計,本發明之組成物中的化合物(A)的含量較佳為0.1質量%至30質量%,更佳為0.5質量%至25質量%,再更佳為5質量%至20質量%。 In the sensitizing ray-sensitive or radiation-sensitive resin composition of the present invention, as the compound (A), one type of compound may be used alone or two or more types of compounds may be used in combination. The content of the compound (A) in the composition of the present invention is preferably from 0.1% by mass to 30% by mass, more preferably from 0.5% by mass to 25% by mass, even more preferably 5% by mass based on the total solid content of the composition. % to 20% by mass.

化合物(A)可與化合物(A)以外的酸產生劑(下文中,有些時候簡稱為化合物(A'))組合使用。 The compound (A) can be used in combination with an acid generator other than the compound (A) (hereinafter, abbreviated as the compound (A') in some cases).

化合物(A')不受特別的限制,但較佳為由下式(ZI')、式(ZII')或式(ZIII')代表的化合物: The compound (A') is not particularly limited, but is preferably a compound represented by the following formula (ZI'), formula (ZII') or formula (ZIII'):

在式(ZI')中,各R201、R202及R203獨立代表有機基。 In the formula (ZI'), each of R 201 , R 202 and R 203 independently represents an organic group.

作為R201、R202及R203之有機基的碳數一般為1至30,較佳為1至20。 The organic group as R 201 , R 202 and R 203 has a carbon number of usually 1 to 30, preferably 1 to 20.

兩個由R201至R203中選出的成員可結合以形成環結構,且環結構可包含氧原子、硫原子、酯鍵、醯胺鍵或羰基。藉由結合兩個由R201至R203中選出的成員所形成的基團包括伸烷基(例如伸丁基、伸戊基)。 Two members selected from R 201 to R 203 may be bonded to form a ring structure, and the ring structure may include an oxygen atom, a sulfur atom, an ester bond, a guanamine bond or a carbonyl group. The group formed by combining two members selected from R 201 to R 203 includes an alkyl group (e.g., a butyl group, a pentyl group).

由R201、R202及R203代表的有機基例如包括後述化合物(ZI'-1)中的對應基團。 The organic group represented by R 201 , R 202 and R 203 includes, for example, a corresponding group in the compound (ZI'-1) described later.

化合物可為具有多個由式(ZI')代表之結構的化合物。舉例而言,化合物可為具有經由單鍵或連結基而將由式(ZI')代表之化合物中的R201至R203之至少一者鍵結於由式(ZI')代表之另一化合物中的R201至R203之至少一者之結構的化合物。 The compound may be a compound having a plurality of structures represented by the formula (ZI'). For example, the compound may be bonded to another compound represented by the formula (ZI') by bonding at least one of R 201 to R 203 in the compound represented by the formula (ZI') via a single bond or a linking group. A compound of the structure of at least one of R 201 to R 203 .

Z-代表非親核性陰離子(具有極低親核性反應之促成能力的陰離子)。 Z - represents a non-nucleophilic anion (an anion having a very low nucleophilic reaction promoting ability).

Z-的實例包括磺酸根陰離子(諸如脂肪族磺酸根陰離子、芳香族磺酸根陰離子及樟腦磺酸根陰離子)、羧酸根陰離子(諸如脂肪族羧酸根陰離子、芳香族羧酸根陰離子及芳烷基羧酸根陰離子)、磺醯亞胺陰離子、雙(烷基磺醯基)醯亞胺陰離子、以及三(烷基磺醯基)甲基化物陰離子。 Examples of Z - include sulfonate anions (such as aliphatic sulfonate anions, aromatic sulfonate anions, and camphor sulfonate anions), carboxylate anions (such as aliphatic carboxylate anions, aromatic carboxylate anions, and aralkyl carboxylates) Anion), sulfonium imine anion, bis(alkylsulfonyl) quinone imine anion, and tris(alkylsulfonyl)methide anion.

脂肪族磺酸根陰離子及脂肪族羧酸根陰離子中的脂肪族部分可為烷基或環烷基,且較佳為碳數為1至30的直鏈型或分支型烷基、或者為碳數為3至30的環烷基。 The aliphatic moiety in the aliphatic sulfonate anion and the aliphatic carboxylate anion may be an alkyl group or a cycloalkyl group, and is preferably a linear or branched alkyl group having a carbon number of 1 to 30, or a carbon number of a cycloalkyl group of 3 to 30.

芳香族磺酸根陰離子及芳香族羧酸根陰離子中的芳香 族基較佳為碳數為6至14的芳基,且其實例包括苯基、甲苯基及萘基。 Aroma of aromatic sulfonate anion and aromatic carboxylate anion The group group is preferably an aryl group having a carbon number of 6 to 14, and examples thereof include a phenyl group, a tolyl group, and a naphthyl group.

上述之烷基、環烷基及芳基可具有取代基。取代基的具體實例包括硝基、諸如氟原子之鹵素原子、羧基、羥基、胺基、氰基、烷氧基(較佳碳數為1至15)、環烷基(較佳碳數為3至15)、芳基(較佳碳數為6至14)、烷氧基羰基(較佳碳數為2至7)、醯基(較佳碳數為2至12)、烷氧基羰氧基(較佳碳數為2至7)、烷硫基(較佳碳數為1至15)、烷基磺醯基(較佳碳數為1至15)、烷基亞胺基磺醯基(較佳碳數為2至15)、芳氧基磺醯基(較佳碳數為6至20)、烷基芳氧基磺醯基(較佳碳數為7至20)、環烷基芳氧基磺醯基(較佳碳數為10至20)、烷氧基烷氧基(較佳碳數為5至20)、環烷基烷氧基烷氧基(較佳碳數為8至20)。各基團中之芳基及環結構更可具有烷基(較佳碳數為1至15)作為取代基。 The above alkyl group, cycloalkyl group and aryl group may have a substituent. Specific examples of the substituent include a nitro group, a halogen atom such as a fluorine atom, a carboxyl group, a hydroxyl group, an amine group, a cyano group, an alkoxy group (preferably having a carbon number of 1 to 15), and a cycloalkyl group (preferably having a carbon number of 3) To 15), an aryl group (preferably having a carbon number of 6 to 14), an alkoxycarbonyl group (preferably having a carbon number of 2 to 7), a mercapto group (preferably having a carbon number of 2 to 12), an alkoxycarbonyloxy group a base (preferably having a carbon number of 2 to 7), an alkylthio group (preferably having a carbon number of 1 to 15), an alkylsulfonyl group (preferably having a carbon number of 1 to 15), and an alkylimidosulfonyl group. (preferably having a carbon number of 2 to 15), an aryloxysulfonyl group (preferably having a carbon number of 6 to 20), an alkylaryloxysulfonyl group (preferably having a carbon number of 7 to 20), a cycloalkyl group An aryloxysulfonyl group (preferably having a carbon number of 10 to 20), an alkoxyalkoxy group (preferably having a carbon number of 5 to 20), a cycloalkyl alkoxyalkoxy group (preferably having a carbon number of 8) To 20). The aryl group and ring structure in each group may further have an alkyl group (preferably having a carbon number of 1 to 15) as a substituent.

芳烷基羧酸根陰離子中的芳烷基較佳為碳數為7至12的芳烷基,且其實例包括苄基、苯乙基、萘甲基、萘乙基及萘丁基。 The aralkyl group in the aralkylcarboxylate anion is preferably an aralkyl group having a carbon number of 7 to 12, and examples thereof include a benzyl group, a phenethyl group, a naphthylmethyl group, a naphthylethyl group, and a naphthylbutyl group.

磺醯亞胺陰離子的實例包括糖精陰離子。 Examples of the sulfonium imine anion include a saccharin anion.

雙(烷基磺醯基)醯亞胺陰離子及三(烷基磺醯基)甲基化物陰離子中的烷基較佳為碳數為1至5的烷基。 The alkyl group in the bis(alkylsulfonyl)phosphonium anion and the tris(alkylsulfonyl)methide anion is preferably an alkyl group having 1 to 5 carbon atoms.

雙(烷基磺醯基)醯亞胺陰離子中的兩個烷基可結合以形成伸烷基(較佳碳數為2至4)且可與醯亞胺基及兩個磺醯基一起形成環。 Two alkyl groups in the bis(alkylsulfonyl) quinone imine anion may be combined to form an alkylene group (preferably having a carbon number of 2 to 4) and may be formed together with a quinone imine group and two sulfonyl groups. ring.

藉由結合雙(烷基磺醯基)醯亞胺陰離子中的兩個烷基所形成之烷基及伸烷基上之取代基的實例包括鹵素原子、經鹵素原子取代的烷基、烷氧基、烷硫基、烷氧基磺醯基、芳氧基磺醯基、以及環烷基芳氧基磺醯基,以氟及經氟原子取代的烷基為較佳。 Examples of the alkyl group formed by combining two alkyl groups in the bis(alkylsulfonyl) quinone imine anion and the substituent on the alkyl group include a halogen atom, an alkyl group substituted by a halogen atom, and an alkoxy group. The alkyl group, the alkylthio group, the alkoxysulfonyl group, the aryloxysulfonyl group, and the cycloalkylaryloxysulfonyl group are preferably a fluorine atom and an alkyl group substituted with a fluorine atom.

Z-的其他實例包括氟化磷(例如PF6 -)、氟化硼(例如BF4 -)及氟化銻(例如SbF6 -)。 Other examples of Z - include phosphorus fluoride (e.g., PF 6 - ), boron fluoride (e.g., BF 4 - ), and cesium fluoride (e.g., SbF 6 - ).

Z-較佳為至少磺酸的α位經氟原子取代之脂肪族磺酸根陰離子、經氟原子或含氟原子的基團所取代的芳香族磺酸根陰離子、烷基經氟原子取代的雙(烷基磺醯基)醯亞胺陰離子、或者烷基經氟原子取代的三(烷基磺醯基)甲基化物陰離子。非親核性陰離子更佳為全氟脂肪族磺酸根陰離子(更佳碳數為4至8)或具有氟原子的苯磺酸根陰離子,再更佳為九氟丁磺酸根陰離子、全氟辛磺酸根陰離子、五氟苯磺酸根陰離子、或者3,5-雙(三氟甲基)苯磺酸根陰離子。 Z - is preferably an aliphatic sulfonate anion substituted with a fluorine atom at the α position of the sulfonic acid, an aromatic sulfonate anion substituted with a fluorine atom or a fluorine atom-containing group, and a double substituted with an alkyl group via a fluorine atom. Alkylsulfonyl) anthracene anion or a tris(alkylsulfonyl)methide anion having an alkyl group substituted with a fluorine atom. The non-nucleophilic anion is more preferably a perfluoroaliphatic sulfonate anion (more preferably 4 to 8 carbon atoms) or a benzenesulfonate anion having a fluorine atom, more preferably a nonafluorobutanesulfonate anion or a perfluorooctanesulfonate. An acid anion, a pentafluorobenzenesulfonate anion, or a 3,5-bis(trifluoromethyl)benzenesulfonate anion.

就酸強度而言,所產生之酸的pKa較佳為-1或-1以下,藉此提高靈敏度。 In terms of acid strength, the pKa of the acid produced is preferably -1 or -1 or less, thereby improving sensitivity.

更佳的組分(ZI')為以下描述的化合物(ZI'-1)。 A more preferred component (ZI') is the compound (ZI'-1) described below.

化合物(ZI'-1)為在式(ZI')中之R201至R203的至少一者為芳基的芳基鋶化合物,亦即以芳基鋶作為陽離子的化合物。 The compound (ZI'-1) is an arylsulfonium compound in which at least one of R 201 to R 203 in the formula (ZI') is an aryl group, that is, a compound having an arylsulfonium as a cation.

在芳基鋶化合物中,R201至R203可全為芳基、或者R201至R203可部分為芳基而其餘為烷基或環烷基,但較佳為 R201至R203全為芳基。 In the aryl hydrazine compound, R 201 to R 203 may be all aryl groups, or R 201 to R 203 may be partially aryl and the remainder being alkyl or cycloalkyl, but preferably R 201 to R 203 are all Aryl.

芳基鋶化合物的實例包括三芳基鋶化合物、二芳基烷基鋶化合物、芳基二烷基鋶化合物、二芳基環烷基鋶化合物、以及芳基二環烷基鋶化合物,以三芳基鋶化合物為較佳。 Examples of the arylsulfonium compound include a triarylsulfonium compound, a diarylalkylsulfonium compound, an aryldialkylsulfonium compound, a diarylcycloalkylsulfonium compound, and an arylbicycloalkylsulfonium compound as a triaryl group. Anthraquinone compounds are preferred.

芳基鋶化合物的芳基較佳為苯基或萘基,更佳為苯基。芳基可為具有雜環結構(含氧原子、氮原子、硫原子或相似物)的芳基。雜環結構的實例包括:吡咯(pyrrole)殘基、呋喃殘基、噻吩(thiophene)殘基、吲哚(indole)殘基、苯并呋喃殘基、以及苯并噻吩殘基。在芳基鋶化合物具有兩個或兩個以上的芳基的案例中,這些兩個或兩個以上的芳基可為相同或不相同。 The aryl group of the arylsulfonium compound is preferably a phenyl group or a naphthyl group, more preferably a phenyl group. The aryl group may be an aryl group having a heterocyclic structure (containing an oxygen atom, a nitrogen atom, a sulfur atom or the like). Examples of the heterocyclic structure include a pyrrole residue, a furan residue, a thiophene residue, an indole residue, a benzofuran residue, and a benzothiophene residue. In the case where the aryl hydrazine compound has two or more aryl groups, these two or more aryl groups may be the same or different.

若有需要時,芳基鋶化合物中所包含烷基或者環烷基較佳為碳數為1至15的直鏈型或分支型烷基,或碳數為3至15的環烷基,且其實例包括甲基、乙基、丙基、正丁基、第二丁基、第三丁基、環丙基、環丁基、以及環己基。 The alkyl group or the cycloalkyl group contained in the aryl hydrazine compound is preferably a linear or branched alkyl group having a carbon number of 1 to 15, or a cycloalkyl group having a carbon number of 3 to 15, if necessary. Examples thereof include methyl, ethyl, propyl, n-butyl, t-butyl, t-butyl, cyclopropyl, cyclobutyl, and cyclohexyl.

R201至R203的芳基、烷基、環烷基可具有烷基(例如碳數為1至15)、環烷基(例如碳數為3至15)、芳基(例如碳數為6至14)、烷氧基(例如碳數為1至15)、鹵素原子、羥基或苯硫基作為取代基。取代基較佳為碳數為1至12的直鏈型或分支型烷基、碳數為3至12的環烷基、或者碳數為1至12的直鏈型、分支型或者環狀的烷氧基,更佳為碳數為1至4的烷基、或者碳數為1至4的烷氧基。取代基可取代在三個成員R201至R203中的任意一者上,或 可取代在這些三個成員的全部者上。在R201至R203為芳基的案例中,取代基較佳為經取代在芳基的對位上。 The aryl group, alkyl group, cycloalkyl group of R 201 to R 203 may have an alkyl group (for example, a carbon number of 1 to 15), a cycloalkyl group (for example, a carbon number of 3 to 15), and an aryl group (for example, a carbon number of 6). To 14), an alkoxy group (for example, a carbon number of 1 to 15), a halogen atom, a hydroxyl group or a phenylthio group as a substituent. The substituent is preferably a linear or branched alkyl group having a carbon number of 1 to 12, a cycloalkyl group having a carbon number of 3 to 12, or a linear, branched or cyclic group having a carbon number of 1 to 12. The alkoxy group is more preferably an alkyl group having 1 to 4 carbon atoms or an alkoxy group having 1 to 4 carbon atoms. The substituent may be substituted on any one of the three members R 201 to R 203 or may be substituted on all of the three members. In the case where R 201 to R 203 are aryl groups, the substituent is preferably substituted at the para position of the aryl group.

以下描述式(ZII')及式(ZIII')。 The formula (ZII') and the formula (ZIII') are described below.

在(ZII')及式(ZIII')中,R204至R207各獨立代表芳基、烷基或環烷基。 In (ZII') and formula (ZIII'), R 204 to R 207 each independently represent an aryl group, an alkyl group or a cycloalkyl group.

R204至R207的芳基、烷基及環烷基相同於在式(ZI'-1)中對於R201至R203所描述的芳基、烷基及環烷基。 The aryl, alkyl and cycloalkyl groups of R 204 to R 207 are the same as the aryl, alkyl and cycloalkyl groups described for R 201 to R 203 in the formula (ZI'-1).

R204至R207的芳基、烷基及環烷基可具有取代基。取代基的實例包括可取代在式(ZI'-1)中之R201至R203之芳基、烷基及環烷基上者。 The aryl group, the alkyl group and the cycloalkyl group of R 204 to R 207 may have a substituent. Examples of the substituent include those which can be substituted with an aryl group, an alkyl group and a cycloalkyl group of R 201 to R 203 in the formula (ZI'-1).

Z-代表非親核性陰離子,且其實例相同於在式(ZI')中之Z-之非親核性陰離子之彼等著。 Z - represents a non-nucleophilic anion, and examples thereof are identical to those of the Z - non-nucleophilic anion in the formula (ZI').

可與本發明之酸產生劑組合使用的酸產生劑(A')的其他實例包括由下列式(ZIV')、式(ZV')及式(ZVI')所代表的化合物。 Other examples of the acid generator (A') which can be used in combination with the acid generator of the present invention include compounds represented by the following formula (ZIV'), formula (ZV') and formula (ZVI').

在式(ZIV')至式(ZVI')中,Ar3及Ar4各獨立代表芳基。 In the formula (ZIV') to the formula (ZVI'), Ar 3 and Ar 4 each independently represent an aryl group.

R208、R209及R210各獨立代表烷基、環烷基或芳基。 R 208 , R 209 and R 210 each independently represent an alkyl group, a cycloalkyl group or an aryl group.

A代表伸烷基、伸烯基或伸芳基。 A represents an alkyl group, an alkenyl group or an aryl group.

Ar3、Ar4、R208、R209及R210之芳基的具體實例相同於 式(ZI'-1)中之R201、R202及R203之芳基的具體實例。 Specific examples of the aryl group of Ar 3 , Ar 4 , R 208 , R 209 and R 210 are the same as those of the aryl group of R 201 , R 202 and R 203 in the formula (ZI'-1).

R208、R209及R210之烷基及環烷基的具體實例相同於(ZI'-1)中之R201、R202及R203之烷基及環烷基的具體實例。 Specific examples of the alkyl group and the cycloalkyl group of R 208 , R 209 and R 210 are the same as those of the alkyl group and the cycloalkyl group of R 201 , R 202 and R 203 in (ZI'-1).

A的伸烷基包括碳數為1至12的伸烷基(例如,亞甲基、伸乙基、伸丙基、伸異丙基、伸丁基、伸異丁基);A的伸烯基包括碳數為2至12的伸烯基(例如,伸乙烯基、伸丙烯基、伸丁烯基);以及A的伸芳基包括碳數為6至10的伸芳基(例如,伸苯基、甲伸苯基、伸萘基)。 The alkylene group of A includes an alkylene group having a carbon number of 1 to 12 (for example, methylene, ethyl, propyl, isopropyl, butyl, isobutyl); The base includes an alkenyl group having 2 to 12 carbon atoms (for example, a vinyl group, a propenyl group, and a butenyl group); and the exoaryl group of A includes an exoaryl group having a carbon number of 6 to 10 (for example, Phenyl, methylphenyl, and naphthyl).

以下繪示可以與本發明之酸產生劑組合使用之酸產生劑之特別較佳的實例。 Particularly preferred examples of the acid generator which can be used in combination with the acid generator of the present invention are shown below.

在組合使用化合物(A)及化合物(A')的案例中,就質量比(化合物(A)/化合物(A'))來說,所使用之酸產生劑的量通常為99/1至20/80,佳較99/1至40/60,更佳為99/1至50/50。 In the case of using the compound (A) and the compound (A') in combination, the amount of the acid generator to be used is usually from 99/1 to 20 in terms of the mass ratio (the compound (A) / the compound (A')). /80, better than 99/1 to 40/60, more preferably 99/1 to 50/50.

[2]樹脂(B) [2] Resin (B)

本發明之感光化射線性或感放射線性樹脂組成物包含樹脂(B)。 The sensitizing ray-sensitive or radiation-sensitive resin composition of the present invention contains a resin (B).

樹脂(B)較佳為能夠藉由酸的作用而分解以增加對於鹼性顯影液之溶解性的樹脂(下文中,有些時候簡稱為「酸分解性樹脂」)。酸分解性樹脂具有能夠藉由酸的作用而分解以在樹脂的主鏈或側鏈之其中一者或兩者上產生鹼可溶性基(alkali-soluble group)的基團(下文中,有時候簡稱為「酸分解性基團」)。 The resin (B) is preferably a resin which can be decomposed by the action of an acid to increase the solubility to an alkaline developer (hereinafter, abbreviated as "acid-decomposable resin" in some cases). The acid-decomposable resin has a group which can be decomposed by the action of an acid to produce an alkali-soluble group on one or both of the main chain or the side chain of the resin (hereinafter, sometimes referred to as an abbreviation) It is an "acid-decomposable group").

樹脂(B)較佳不溶或者難溶於鹼性顯影液中。 The resin (B) is preferably insoluble or poorly soluble in an alkaline developing solution.

酸分解性基較佳為具有藉由酸的作用而分解及脫離的基團來保護鹼可溶性基的結構。 The acid-decomposable group is preferably a structure having a group which decomposes and desorbs by the action of an acid to protect the alkali-soluble group.

鹼可溶性基的實例包括酚性羥基、羧基、氟化醇基、磺酸基、磺醯胺基、磺醯亞胺基、(烷基磺醯基)(烷基羰基)亞甲基、(烷基磺醯基)(烷基羰基)醯亞胺基、雙(烷基羰基)亞甲基、雙(烷基羰基)醯亞胺基、雙(烷基磺醯基)亞甲基、雙(烷基磺醯基)醯亞胺基、三(烷基羰基)亞甲基及三(烷基磺醯基)亞甲基。 Examples of the alkali-soluble group include a phenolic hydroxyl group, a carboxyl group, a fluorinated alcohol group, a sulfonic acid group, a sulfonylamino group, a sulfonimide group, an (alkylsulfonyl) (alkylcarbonyl)methylene group, (alkane) (Alkylcarbonyl) fluorenylene, bis(alkylcarbonyl)methylene, bis(alkylcarbonyl)indolylene, bis(alkylsulfonyl)methylene, bis ( Alkylsulfonyl) fluorenylene, tris(alkylcarbonyl)methylene and tris(alkylsulfonyl)methylene.

較佳的鹼可溶性基包括羧基、氟化醇基(較佳為六氟異丙醇基)及磺酸基。 Preferred alkali-soluble groups include a carboxyl group, a fluorinated alcohol group (preferably a hexafluoroisopropanol group), and a sulfonic acid group.

作為酸分解性基之較佳的基團是將以上鹼可溶性基的氫原子置換為能夠藉由酸的作用而脫離之基團的基團。 A preferred group as the acid-decomposable group is a group in which a hydrogen atom of the above alkali-soluble group is substituted with a group capable of being detached by the action of an acid.

能夠藉由酸的作用而脫離之基團的實例包括-C(R36)(R37)(R38)、-C(R36)(R37)(OR39)及-C(R01)(R02)(OR39)。 Examples of the group capable of being detached by the action of an acid include -C(R 36 )(R 37 )(R 38 ), -C(R 36 )(R 37 )(OR 39 ), and -C(R 01 ). (R 02 ) (OR 39 ).

在式中,R36至R39各獨立代表烷基、環烷基、芳基、芳烷基或烯基。R36及R37可彼此結合以形成環。 In the formula, R 36 to R 39 each independently represent an alkyl group, a cycloalkyl group, an aryl group, an arylalkyl group or an alkenyl group. R 36 and R 37 may be bonded to each other to form a ring.

R01及R02各獨立代表氫原子、烷基、環烷基、芳基、芳烷基或烯基。 R 01 and R 02 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkenyl group.

酸分解性基較佳為異丙苯酯基(cumyl ester group)、烯醇酯基(enol ester group)、縮醛酯基(acetal ester group)、三級烷基酯基或相似物,更佳為三級烷基酯基。 The acid-decomposable group is preferably a cumyl ester group, an enol ester group, an acetal ester group, a tertiary alkyl ester group or the like, more preferably It is a tertiary alkyl ester group.

樹脂(B)可包含之含酸分解性基的重複單元較佳為由下式(AI)所代表的重複單元: The repeating unit containing the acid-decomposable group which the resin (B) may contain is preferably a repeating unit represented by the following formula (AI):

在式(AI)中,Xa1代表氫原子、可具有取代基的甲基、或者由-CH2-R9所代表的基團。R9代表羥基或者一價有機基。一價有機基的實例包括碳數為5或5以下的烷基及碳數為5或5以下的醯基。在這些實例中,較佳為碳數為3或3以下的烷基,且更佳為甲基。Xa1較佳為氫原子、 甲基、三氟甲基或羥甲基。 In the formula (AI), Xa 1 represents a hydrogen atom, a methyl group which may have a substituent, or a group represented by -CH 2 -R 9 . R 9 represents a hydroxyl group or a monovalent organic group. Examples of the monovalent organic group include an alkyl group having a carbon number of 5 or less and an anthracene group having a carbon number of 5 or less. In these examples, an alkyl group having a carbon number of 3 or less is preferred, and a methyl group is more preferred. Xa 1 is preferably a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group.

T表示單鍵或者二價連結基。 T represents a single bond or a divalent linking group.

Rx1至Rx3各獨立代表烷基(直鏈型或分支型)或環烷基(單環或多環)。 Rx 1 to Rx 3 each independently represent an alkyl group (linear or branched) or a cycloalkyl (monocyclic or polycyclic).

Rx1至Rx3中的兩者可結合以形成環烷基(單環或多環)。 Both of Rx 1 to Rx 3 may be combined to form a cycloalkyl group (monocyclic or polycyclic).

T的二價連結基的實例包括伸烷基、-COO-Rt-基、-O-Rt-基及其相似物。在式中,Rt代表伸烷基或伸環烷基。 Examples of the divalent linking group of T include an alkylene group, a -COO-Rt- group, an -O-Rt- group, and the like. In the formula, Rt represents an alkylene group or a cycloalkyl group.

T較佳為單鍵或-COO-Rt-基。Rt較佳為碳數為1至5的伸烷基,更佳為-CH2-基、-(CH2)2-基或-(CH2)3-基。 T is preferably a single bond or a -COO-Rt- group. Rt is preferably an alkylene group having a carbon number of 1 to 5, more preferably a -CH 2 - group, a -(CH 2 ) 2 - group or a -(CH 2 ) 3 - group.

Rx1至Rx3的烷基較佳為碳數為1至4的烷基,諸如甲基、乙基、正丙基、異丙基、正丁基、異丁基及第三丁基。 The alkyl group of Rx 1 to Rx 3 is preferably an alkyl group having a carbon number of 1 to 4, such as a methyl group, an ethyl group, a n-propyl group, an isopropyl group, a n-butyl group, an isobutyl group, and a t-butyl group.

Rx1至Rx3的環烷基較佳為:諸如環戊基及環己基之單環環烷基;或者諸如降莰基、四環癸基、四環十二烷基及金剛烷基之多環環烷基。 The cycloalkyl group of Rx 1 to Rx 3 is preferably a monocyclic cycloalkyl group such as a cyclopentyl group and a cyclohexyl group; or a polythiol group, a tetracyclodecyl group, a tetracyclododecyl group, and an adamantyl group; Cyclocycloalkyl.

藉由結合Rx1至Rx3之兩者所形成的環烷基較佳為:諸如環戊基及環己基之單環環烷基;或者諸如降莰基、四環癸基、四環十二烷基及金剛烷基之多環環烷基。以上全部的環烷基中,較佳為碳數為5至6之單環的環烷基。 The cycloalkyl group formed by combining both of Rx 1 to Rx 3 is preferably a monocyclic cycloalkyl group such as a cyclopentyl group and a cyclohexyl group; or such as a thiol group, a tetracyclic fluorenyl group, or a tetracyclic group A polycyclic cycloalkyl group of an alkyl group and an adamantyl group. Among all the above cycloalkyl groups, a monocyclic cycloalkyl group having a carbon number of 5 to 6 is preferred.

較佳為Rx1為甲基或者乙基,且使Rx2與Rx3結合以形成上述環烷基的實施例。 An example in which Rx 1 is a methyl group or an ethyl group and Rx 2 is bonded to Rx 3 to form the above cycloalkyl group is preferred.

上述基團各可具有取代基,且取代基的實例包括:烷基(碳數為1至4)、鹵素原子、羥基、烷氧基(碳數為1 至4)、羧基及烷氧基羰基(碳數為2至6)。碳數較佳為8或8以下。 Each of the above groups may have a substituent, and examples of the substituent include an alkyl group (having a carbon number of 1 to 4), a halogen atom, a hydroxyl group, and an alkoxy group (having a carbon number of 1) To 4), a carboxyl group and an alkoxycarbonyl group (having a carbon number of 2 to 6). The carbon number is preferably 8 or less.

以構成樹脂之全部的重複單元計,具有酸分解性基之重複單元的含量較佳為20莫耳%至70莫耳%,更佳為30莫耳%至60莫耳%。 The content of the repeating unit having an acid-decomposable group is preferably from 20 mol% to 70 mol%, more preferably from 30 mol% to 60 mol%, based on the total of the repeating units constituting the resin.

以下繪示具有酸分解性基之重複單元之較佳具體實例,但本發明不受其限制。 Preferred specific examples of the repeating unit having an acid-decomposable group are shown below, but the invention is not limited thereto.

在具體實例中,Rx及Xa1各代表氫原子、CH3、CF3或CH2OH,且Rxa及Rxb各代表碳數為1至4的烷基。Z代表含極性基的取代基,且當多個Z存在時,各個Z可獨立於每個其他的Z。p代表0或正整數。Z的具體實例及較佳實例相同於後述式(II-1)中的R10之具體實例及較佳實例。 In a specific example, Rx and Xa 1 each represent a hydrogen atom, CH 3 , CF 3 or CH 2 OH, and Rxa and Rxb each represent an alkyl group having 1 to 4 carbon atoms. Z represents a substituent containing a polar group, and when a plurality of Z is present, each Z may be independent of each other Z. p represents 0 or a positive integer. Specific examples and preferred examples of Z are the same as those of R 10 in the following formula (II-1) and preferred examples.

樹脂(B)更佳為包含由下式(I)所代表之重複單元或由下式(II)所代表之重複單元來作為通式(AI)所代表的重複單元的樹脂。 The resin (B) is more preferably a resin containing a repeating unit represented by the following formula (I) or a repeating unit represented by the following formula (II) as a repeating unit represented by the formula (AI).

在式(I)及式(II)中,R1及R3各獨立代表氫原子、可具有取代基的甲基、或者由-CH2-R9所代表之基團。R9代表一價有機基。 In the formulae (I) and (II), R 1 and R 3 each independently represent a hydrogen atom, a methyl group which may have a substituent, or a group represented by -CH 2 -R 9 . R 9 represents a monovalent organic group.

R2、R4、R5、R6各獨立代表烷基或者環烷基。 R 2 , R 4 , R 5 and R 6 each independently represent an alkyl group or a cycloalkyl group.

R代表與碳原子一起形成脂環結構所必需的原子團。 R represents an atomic group necessary for forming an alicyclic structure together with a carbon atom.

R1及R3各較佳為氫原子、甲基、三氟甲基或羥甲基。R9中的一價有機基的具體實例及較佳實例相同於式(AI)中之對於R9所描述者。 R 1 and R 3 are each preferably a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group. Specific examples and preferred examples of the monovalent organic group in R 9 are the same as those described for R 9 in the formula (AI).

R2中的烷基可為直鏈型或分支型,且可具有取代基。 The alkyl group in R 2 may be linear or branched and may have a substituent.

R2中的環烷基可為單環或多環,且可具有取代基。 The cycloalkyl group in R 2 may be monocyclic or polycyclic, and may have a substituent.

R2較佳為烷基,更佳為碳數為1至10的烷基,再更佳為碳數為1至5的烷基,且其實例包括甲基、乙基及相似物。 R 2 is preferably an alkyl group, more preferably an alkyl group having 1 to 10 carbon atoms, still more preferably an alkyl group having 1 to 5 carbon atoms, and examples thereof include a methyl group, an ethyl group and the like.

R代表與碳原子一起形成脂環結構所必需的原子團。 藉由R與碳原子一起形成的脂環結構較佳為單環的脂環結構,且其碳數較佳為3至7,更佳為5或6。 R represents an atomic group necessary for forming an alicyclic structure together with a carbon atom. The alicyclic structure formed by R together with a carbon atom is preferably a monocyclic alicyclic structure, and its carbon number is preferably from 3 to 7, more preferably from 5 or 6.

R3較佳為氫原子或者甲基,更佳為甲基。 R 3 is preferably a hydrogen atom or a methyl group, more preferably a methyl group.

R4、R5及R6中的烷基可為直鏈型或分支型,且可具有取代基。烷基較佳為碳數為1至4的烷基,其諸如甲基、乙基、正丙基、異丙基、正丁基、異丁基及第三丁基。 The alkyl group in R 4 , R 5 and R 6 may be linear or branched and may have a substituent. The alkyl group is preferably an alkyl group having 1 to 4 carbon atoms such as methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl and t-butyl groups.

R4、R5及R6中的環烷基可為單環或多環,且可具有取代基。環烷基較佳為:諸如環戊基及環己基之單環環烷基;或者諸如降莰基、四環癸基、四環十二烷基及金剛烷基之多環環烷基。 The cycloalkyl group in R 4 , R 5 and R 6 may be monocyclic or polycyclic, and may have a substituent. The cycloalkyl group is preferably a monocyclic cycloalkyl group such as a cyclopentyl group and a cyclohexyl group; or a polycyclic cycloalkyl group such as a norbornyl group, a tetracyclononyl group, a tetracyclododecyl group, and an adamantyl group.

由式(I)所代表的重複單元的實例例如包括由下式(1-a)所代表的重複單元。 Examples of the repeating unit represented by the formula (I) include, for example, a repeating unit represented by the following formula (1-a).

在式中,R1及R2具有與式(I)中相同的意義。 In the formula, R 1 and R 2 have the same meanings as in the formula (I).

由式(II)所代表的重複單元較佳為由下式(II-1)所代表的重複單元。 The repeating unit represented by the formula (II) is preferably a repeating unit represented by the following formula (II-1).

在式(II-1)中,R3至R5具有與式(II)中相同的意義。 In the formula (II-1), R 3 to R 5 have the same meanings as in the formula (II).

R10代表含極性基的取代基。在多個R10存在的案例中,這些R10可相同或不相同。含極性基的取代基的實例包括羥基、氰基、胺基、烷基醯胺基、磺醯胺基自身、以及具有以上基團之至少一者的直鏈型或分支型烷基或環烷基。較佳為具有羥基的烷基,且更佳為具有羥基的分支型烷基。分支型烷基較佳為異丙基。 R 10 represents a substituent having a polar group. In the case where multiple R 10 are present, these R 10 may be the same or different. Examples of the polar group-containing substituent include a hydroxyl group, a cyano group, an amine group, an alkylguanamine group, a sulfonylamino group itself, and a linear or branched alkyl group or a naphthene having at least one of the above groups. base. It is preferably an alkyl group having a hydroxyl group, and more preferably a branched alkyl group having a hydroxyl group. The branched alkyl group is preferably an isopropyl group.

p代表0至15的整數。p較佳為0至2的整數,更佳為0或1。 p represents an integer from 0 to 15. p is preferably an integer of 0 to 2, more preferably 0 or 1.

酸分解性樹脂較佳為包含由式(I)所代表的重複單元或由式(II)所代表的重複單元來作為由式(AI)代表之重複單元的樹脂。在另一實施例中,樹脂較佳為包含至少兩種由式(I)所代表的重複單元來作為由通式(AI)代表之重複單元的樹脂。 The acid-decomposable resin is preferably a resin containing a repeating unit represented by the formula (I) or a repeating unit represented by the formula (II) as a repeating unit represented by the formula (AI). In another embodiment, the resin is preferably a resin comprising at least two repeating units represented by the formula (I) as a repeating unit represented by the general formula (AI).

作為樹脂(B)之具有酸分解性基的重複單元,可使用一種、或將兩種或兩種以上組合使用。在組合使用的案例中,組合的較佳實例繪示如下。在以下式中,各R獨立 代表氫原子或甲基。 As the repeating unit having an acid-decomposable group of the resin (B), one type may be used alone or two or more types may be used in combination. In the case of combined use, preferred examples of the combination are shown below. In the following formula, each R is independent Represents a hydrogen atom or a methyl group.

樹脂(B)較佳包含具有內酯結構或磺內酯(環狀磺酸酯)結構的重複單元。 The resin (B) preferably contains a repeating unit having a lactone structure or a sultone (cyclic sulfonate) structure.

作為內酯基或磺內酯基,可使用任意一種內酯基或磺內酯基,只要其具有內酯結構或磺內酯結構即可,但結構較佳為5員環至7員環內酯或磺內酯結構,且結構較佳與 另一環結構以形成雙環或螺環結構的形式而融合(fuse)為5員環至7員環內酯或磺內酯結構。樹脂更佳包含具有下式(LC1-1)至式(LC1-17)、(SL1-1)及(SL1-2)之任意一者所代表的具有內酯或磺內酯結構的重複單元。內酯或磺內酯結構可直接鍵結於主鏈上。較佳之內酯或磺內酯結構為(LC1-1)、(LC1-4)、(LC1-5)及(LC1-8),以(LC1-4)為更佳。藉由使用特定的內酯或磺內酯結構,將改善線邊緣粗糙度(line width roughness,LWR)及顯影缺陷。 As the lactone group or the sultone group, any one of a lactone group or a sultone group may be used as long as it has a lactone structure or a sultone structure, but the structure is preferably a 5-membered ring to a 7-membered ring. Ester or sultone structure, and the structure is better The other ring structure fuses in the form of a bicyclic or spiro ring structure to a 5-membered ring to a 7-membered ring lactone or sultone structure. More preferably, the resin comprises a repeating unit having a lactone or sultone structure represented by any one of the following formulae (LC1-1) to (LC1-17), (SL1-1), and (SL1-2). The lactone or sultone structure can be directly bonded to the backbone. Preferred lactone or sultone structures are (LC1-1), (LC1-4), (LC1-5) and (LC1-8), with (LC1-4) being more preferred. By using a particular lactone or sultone structure, line width roughness (LWR) and development defects will be improved.

內酯結構部分或磺內酯結構部分可具有或可不具有取代基(Rb2)。取代基(Rb2)之較佳的實例包括碳數為1至8的烷基、碳數為4至7的環烷基、碳數為1至8的烷氧基、碳數為2至8的烷氧基羰基、羧基、鹵素原子、羥基、氰基以及酸分解性基。在這些實例中,更佳為碳數為1至4的烷基、氰基及酸分解性基。n2代表0至4的整數。當n2為2或2以上時,各取代基(Rb2)可相同或不相同於每個其他的取代基(Rb2),此外,多個的取代基(Rb2)可彼此結合以形成環。 The lactone moiety or the sultone moiety may or may not have a substituent (Rb 2 ). Preferable examples of the substituent (Rb 2 ) include an alkyl group having 1 to 8 carbon atoms, a cycloalkyl group having 4 to 7 carbon atoms, an alkoxy group having 1 to 8 carbon atoms, and 2 to 8 carbon atoms. An alkoxycarbonyl group, a carboxyl group, a halogen atom, a hydroxyl group, a cyano group, and an acid-decomposable group. Among these examples, an alkyl group having a carbon number of 1 to 4, a cyano group, and an acid-decomposable group are more preferable. n 2 represents an integer of 0 to 4. When n 2 is 2 or more, each substituent (Rb 2 ) may be the same or different from each other substituent (Rb 2 ), and further, a plurality of substituents (Rb 2 ) may be bonded to each other to form ring.

樹脂(B)較佳包含具有內酯結構或磺內酯結構的重複單元,其由下式(III)代表之: The resin (B) preferably contains a repeating unit having a lactone structure or a sultone structure, which is represented by the following formula (III):

在式(III)中,A代表酯鍵(由-COO-所代表的基團)或醯胺鍵(由-CONH-所代表的基團)。 In the formula (III), A represents an ester bond (a group represented by -COO-) or a guanamine bond (a group represented by -CONH-).

當多個R0存在時,R0代表(各自獨立代表)伸烷基、伸環烷基或其組合物。 When a plurality of R 0 are present, R 0 represents (each independently represents) an alkylene group, a cycloalkyl group, or a combination thereof.

當多個Z存在時,Z代表(各自獨立代表)醚鍵、酯 鍵、醯胺鍵、胺基甲酸酯鍵(由代 表的基團)、 或者脲鍵(由代表的基團),其中R代表氫原子、 烷基、環烷基或芳基。 When a plurality of Z are present, Z represents (each independently represents) an ether bond, an ester bond, a guanamine bond, a urethane bond (by or Representative group), or urea bond (by Representative group) wherein R represents a hydrogen atom, an alkyl group, a cycloalkyl group or an aryl group.

R8代表具有內酯結構或磺內酯結構的一價有機基。 R 8 represents a monovalent organic group having a lactone structure or a sultone structure.

n為由-R0-Z-所代表之結構的重複數,且代表0至2的整數。 n is the number of repetitions of the structure represented by -R 0 -Z- and represents an integer of 0 to 2.

R7代表氫原子、鹵素原子或烷基。 R 7 represents a hydrogen atom, a halogen atom or an alkyl group.

R0的伸烷基與伸環烷基可具有取代基。 The alkylene and cycloalkyl groups of R 0 may have a substituent.

Z較佳為醚鍵或酯鍵,更佳為酯鍵。 Z is preferably an ether bond or an ester bond, more preferably an ester bond.

R7的烷基較佳為碳數為1至4的烷基,更佳為甲基或乙基,再更佳為甲基。R0的伸烷基及伸環烷基與R7中的烷基可各經取代,且取代基的實例包括:諸如氟原子、氯原子及溴原子之鹵素原子、巰基(mercapto group)、羥基、諸如甲氧基、乙氧基、異丙氧基、第三丁氧基及苄氧基之烷氧基、以及諸如乙醯氧基(acetyloxy group)及丙醯氧基之醯氧基(acetoxy group)。R7較佳為氫原子、甲基、三氟甲基或羥甲基。 The alkyl group of R 7 is preferably an alkyl group having 1 to 4 carbon atoms, more preferably a methyl group or an ethyl group, still more preferably a methyl group. The alkylene and cycloalkyl groups of R 0 and the alkyl group of R 7 may each be substituted, and examples of the substituent include a halogen atom such as a fluorine atom, a chlorine atom and a bromine atom, a mercapto group, and a hydroxyl group. Alkoxy groups such as methoxy, ethoxy, isopropoxy, tert-butoxy and benzyloxy, and oxioxy groups such as acetyloxy group and propyloxy group (acetoxy) Group). R 7 is preferably a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group.

R0中的鏈狀伸烷基較佳為碳數為1至10的鏈狀伸烷基,更佳為碳數為1至5的鏈狀伸烷基,且其實例包括亞 甲基、伸乙基及伸丙基。伸環烷基較佳為碳數為3至20的伸環烷基,且其實例包括:伸環己基、伸環戊基、伸降莰烷基及伸金剛烷基。為了表現出本發明的效果,更佳為鏈狀伸烷基,且再更佳為亞甲基。 The chain alkyl group in R 0 is preferably a chain alkyl group having a carbon number of 1 to 10, more preferably a chain alkyl group having a carbon number of 1 to 5, and examples thereof include a methylene group and a stretching group. Ethyl and propyl. The cycloalkyl group is preferably a cycloalkyl group having a carbon number of 3 to 20, and examples thereof include a cyclohexylene group, a cyclopentylene group, a pendant decyl group, and an adamantyl group. In order to exhibit the effects of the present invention, a chain alkyl group is more preferable, and a methylene group is more preferable.

具有由R8所代表之內酯或磺內酯結構的取代基不受限制,只要其具有內酯或磺內酯結構即可。其具體實例包括內酯或由式(LC1-1)至式(LC1-17)、(SL1-1)及(SL1-2)所代表的結構,且在這些實例之中,較佳為由(LC1-4)所代表之結構。更佳為式(LC1-1)至式(LC1-17)、(SL1-1)及(SL1-2)中的n2為2或2以下的結構。 The substituent having a lactone or sultone structure represented by R 8 is not limited as long as it has a lactone or sultone structure. Specific examples thereof include a lactone or a structure represented by the formula (LC1-1) to the formulae (LC1-17), (SL1-1), and (SL1-2), and among these examples, it is preferred to The structure represented by LC1-4). More preferably, the formula (LC1-1) to the formula (LC1-17), (SL1-1), and (SL1-2) has a structure in which n 2 is 2 or less.

R8較佳為具有未經取代之內酯或磺內酯結構的一價有機基,或者具有包含甲基、氰基或者烷氧基羰基作為取代基的內酯或磺內酯結構的一價有機基,更佳為具有包含氰基作為取代基的內酯(氰基內酯)或磺內酯(氰基磺內酯)結構的一價有機基。 R 8 is preferably a monovalent organic group having an unsubstituted lactone or sultone structure, or a monovalent structure having a lactone or sultone structure containing a methyl group, a cyano group or an alkoxycarbonyl group as a substituent. The organic group is more preferably a monovalent organic group having a lactone (cyanolactone) or a sultone (cyanosultone) structure containing a cyano group as a substituent.

以下繪示由式(III)所代表之包含具內酯或磺內酯結構之基團之重複單元的具體實例,但本發明不受其限制。 Specific examples of the repeating unit including the group having a lactone or sultone structure represented by the formula (III) are shown below, but the invention is not limited thereto.

在具體實例中,R代表氫原子、可具有取代基的烷基、或者鹵素原子,較佳為氫原子、甲基、羥甲基或乙醯氧基甲基。 In a specific example, R represents a hydrogen atom, an alkyl group which may have a substituent, or a halogen atom, preferably a hydrogen atom, a methyl group, a methylol group or an ethoxymethyl group.

在下列式中,Me代表甲基。 In the following formula, Me represents a methyl group.

含內酯或磺內酯結構的重複單元更佳為由下式(III-1)或(III-1')所代表的重複單元: The repeating unit having a lactone or sultone structure is more preferably a repeating unit represented by the following formula (III-1) or (III-1'):

在式(III-1)及(III-1')中,R7、A、R0、Z及n具有與在式(III)中相同的意義。 In the formulae (III-1) and (III-1'), R 7 , A, R 0 , Z and n have the same meanings as in the formula (III).

R7'、A'、R0'、Z'及n'分別具有與式(III)中之R7、A、R0、Z及n的相同意義。 R 7 ', A', R 0 ', Z' and n' have the same meanings as R 7 , A, R 0 , Z and n in the formula (III), respectively.

當多個R9存在時,R9代表(各自獨立代表)烷基、環烷基、烷氧基羰基、氰基、羥基或烷氧基,且當多個R9存在時,其中兩個成員可結合以形成環。 When a plurality of R 9 are present, R 9 represents (each independently represents) an alkyl group, a cycloalkyl group, an alkoxycarbonyl group, a cyano group, a hydroxyl group or an alkoxy group, and when a plurality of R 9 are present, two of the members They can be combined to form a ring.

當多個R9'存在時,R9'代表(各自獨立代表)烷基、環烷基、烷氧基羰基、氰基、羥基或烷氧基,且當多個R9' 存在時,其中兩個成員可結合以形成環。 When a plurality of R 9 ' are present, R 9 ' represents (each independently represents) an alkyl group, a cycloalkyl group, an alkoxycarbonyl group, a cyano group, a hydroxyl group or an alkoxy group, and when a plurality of R 9 ' are present, Two members can combine to form a loop.

X及X'各獨立代表伸烷基、氧原子或者硫原子。 X and X' each independently represent an alkyl group, an oxygen atom or a sulfur atom.

m及m'各為取代基數,且獨立代表0至5的整數。m及m'各較佳為0或1。 m and m' are each a substituent number and independently represent an integer of 0 to 5. m and m' are each preferably 0 or 1.

R9及R9'的烷基較佳為碳數為1至4的烷基,更佳為甲基或乙基,且最佳為甲基。環烷基的實例包括環丙基、環丁基、環戊基及環己基。烷氧基羰基的實例包括甲氧基羰基、乙氧基羰基、正丁氧基羰基及第三丁氧基羰基。烷氧基的實例包括甲氧基、乙氧基、丙氧基、異丙氧基及丁氧基。這些基團可具有取代基,且取代基包括:羥基、諸如甲氧基及乙氧基之烷氧基、氰基,及諸如氟原子之鹵素原子。R9及R9'各較佳為甲基、氰基或烷氧基羰基,更佳為氰基。 The alkyl group of R 9 and R 9 ' is preferably an alkyl group having 1 to 4 carbon atoms, more preferably a methyl group or an ethyl group, and most preferably a methyl group. Examples of the cycloalkyl group include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, and a cyclohexyl group. Examples of the alkoxycarbonyl group include a methoxycarbonyl group, an ethoxycarbonyl group, a n-butoxycarbonyl group, and a third butoxycarbonyl group. Examples of alkoxy groups include methoxy, ethoxy, propoxy, isopropoxy and butoxy groups. These groups may have a substituent, and the substituent includes a hydroxyl group, an alkoxy group such as a methoxy group and an ethoxy group, a cyano group, and a halogen atom such as a fluorine atom. R 9 and R 9 ' are each preferably a methyl group, a cyano group or an alkoxycarbonyl group, more preferably a cyano group.

X及X'之伸烷基的實例包括亞甲基及伸乙基。X及X'各較佳為氧原子或亞甲基,更佳為亞甲基。 Examples of the alkylene group of X and X' include a methylene group and an ethyl group. X and X' are each preferably an oxygen atom or a methylene group, more preferably a methylene group.

當m及m'各為1或1以上時,至少一個R9及R9'較佳為在內酯之羰基的α位或者β位上取代,更佳為在α位上取代。 When m and m' are each 1 or more, at least one of R 9 and R 9 ' is preferably substituted at the α-position or the β-position of the carbonyl group of the lactone, and more preferably at the α-position.

以下繪示由式(III-1)或式(III-1')所代表之具有含內酯結構或磺內脂結構之基團之重複單元的具體實例,但本發明不受其限制。在具體實例中,R代表氫原子、可具有取代基的烷基、或者鹵素原子,較佳為氫原子、甲基、羥甲基或乙醯氧基甲基。 Specific examples of the repeating unit having a group having a lactone structure or a sultone structure represented by the formula (III-1) or the formula (III-1') are shown below, but the invention is not limited thereto. In a specific example, R represents a hydrogen atom, an alkyl group which may have a substituent, or a halogen atom, preferably a hydrogen atom, a methyl group, a methylol group or an ethoxymethyl group.

以樹脂中之全部的重複單元計,在包含多種重複單元作為其總重複單元時,由式(III)所代表之重複單元的含量較佳為15莫耳%至60莫耳%,更佳為20莫耳%至60莫耳%,再更佳為30莫耳%及50莫耳%。 The content of the repeating unit represented by the formula (III) is preferably from 15 mol% to 60 mol%, more preferably in the case of all repeating units in the resin, including a plurality of repeating units as its total repeating unit. 20% to 60% by mole, more preferably 30% by mole and 50% by mole.

在一實施例中,由式(III)所代表的單元可為由下式 (AII')所代表的重複單元: In an embodiment, the unit represented by the formula (III) may be a repeating unit represented by the following formula (AII'):

在式(AII')中,Rb0代表氫原子、鹵素原子或碳數智1至4的烷基。可以在Rb0之烷基取代之取代基的較佳實例包括羥基及鹵素原子。Rb0的鹵素原子包括氟原子、氯原子、溴原子及碘原子。Rb0較佳為氫原子、甲基、羥甲基或三氟甲基,更佳為氫原子或甲基。 In the formula (AII'), Rb 0 represents a hydrogen atom, a halogen atom or an alkyl group having 1 to 4 carbon atoms. Preferable examples of the substituent which may be substituted with an alkyl group of Rb 0 include a hydroxyl group and a halogen atom. The halogen atom of Rb 0 includes a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom. Rb 0 is preferably a hydrogen atom, a methyl group, a methylol group or a trifluoromethyl group, more preferably a hydrogen atom or a methyl group.

V代表具有由式(LC1-1)至式(LC1-17)、式(SL1-1)及式(SL1-2)中任意一者所代表之結構的基團。 V represents a group having a structure represented by any one of the formula (LC1-1) to the formula (LC1-17), the formula (SL1-1), and the formula (SL1-2).

樹脂(B)可包含具有上述由式(III)所代表之具內酯或磺內酯結構的重複單元以外的重複單元。 The resin (B) may contain a repeating unit other than the repeating unit having a lactone or sultone structure represented by the above formula (III).

除了以上繪示的具體實例外,具有內酯基或磺內酯基之重複單元的具體實例包括下列者,但本發明不受其限制。 Specific examples of the repeating unit having a lactone group or a sultone group include the following, in addition to the specific examples shown above, but the invention is not limited thereto.

(在式中,Rx代表H、CH3、CH2OH或CF3。) (In the formula, Rx represents H, CH 3 , CH 2 OH or CF 3 .)

(在式中,Rx代表H、CH3、CH2OH或CF3。) (In the formula, Rx represents H, CH 3 , CH 2 OH or CF 3 .)

(在式中,Rx代表H、CH3、CH2OH或CF3。) (In the formula, Rx represents H, CH 3 , CH 2 OH or CF 3 .)

在這些具體實例中,特別較佳的重複單元包括下列重複單元。藉由選擇優選的內酯基或磺內酯基,將改善圖案輪廓及疏/密偏差(iso/dense bias)。 In these specific examples, particularly preferred repeating units include the following repeating units. By selecting the preferred lactone group or sultone group, the pattern profile and the iso/dense bias will be improved.

(在式中,Rx代表H、CH3、CH2OH或CF3。) (In the formula, Rx represents H, CH 3 , CH 2 OH or CF 3 .)

具有內酯基或磺內酯基的重複單元通常具有光學異構物,但可使用任何的光學異構物。可單獨使用一種光學異構物,或者可使用多種光學異構物的混合物。在主要使用一種光學異構物的案例中,其光學純度(ee)較佳為90%或90%以上,更佳為95%或95%以上。 The repeating unit having a lactone group or a sultone group usually has an optical isomer, but any optical isomer can be used. One optical isomer may be used alone, or a mixture of a plurality of optical isomers may be used. In the case where an optical isomer is mainly used, the optical purity (ee) is preferably 90% or more, more preferably 95% or more.

以樹脂中之全部的重複單元計,在樹脂整體包含多種重複單元時,由式(III)所代表之重複單元外之具有內酯或磺內酯結構之重複單元的含量,較佳為15莫耳%至60莫耳%,更佳為20莫耳%至50莫耳%,再更佳為30莫耳%至50莫耳%。 When the resin as a whole contains a plurality of repeating units, the content of the repeating unit having a lactone or sultone structure other than the repeating unit represented by the formula (III) is preferably 15 mol. The ear% to 60% by mole, more preferably 20% by mole to 50% by mole, still more preferably 30% by mole to 50% by mole.

又,可組合使用選自式(III)之兩種或兩種以上的內酯或磺內酯重複單元,藉此增加本發明的效率。在組合使用的案例中,較佳是在n為1的狀況下,從式(III)中選出之兩個或兩個以上內酯或磺內酯重複單元並組合使用。 Further, two or more lactone or sultone repeating units selected from the group consisting of the formula (III) may be used in combination, thereby increasing the efficiency of the present invention. In the case of combined use, it is preferred to use two or more lactone or sultone repeating units selected from the formula (III) in combination in the case where n is 1.

樹脂(B)較佳包含式(AI)及式(III)外之具有羥基或氰基的重複單元。得益於此重複單元,可提昇基板密著性及顯影液親和性。具有羥基或氰基的重複單元較佳為具有經羥基或氰基取代之脂環烴結構的重複單元,且較佳不具有酸分解性基。經羥基或氰基取代之脂環烴結構中的脂環烴結構較佳為金剛烷基、二金剛烷基或降莰基。經羥基或氰基取代之脂環烴結構較佳為由下式(VIIa)至式(VIId)所代表的部分結構: The resin (B) preferably contains a repeating unit having a hydroxyl group or a cyano group other than the formula (AI) and the formula (III). Thanks to this repeating unit, substrate adhesion and developer affinity can be improved. The repeating unit having a hydroxyl group or a cyano group is preferably a repeating unit having an alicyclic hydrocarbon structure substituted with a hydroxyl group or a cyano group, and preferably has no acid-decomposable group. The alicyclic hydrocarbon structure in the alicyclic hydrocarbon structure substituted by a hydroxyl group or a cyano group is preferably an adamantyl group, a diadamantyl group or a norbornyl group. The alicyclic hydrocarbon structure substituted by a hydroxyl group or a cyano group is preferably a partial structure represented by the following formula (VIIa) to formula (VIId):

在式(VIIa)至式(VIIc)中,R2c至R4c各獨立代表氫原子、羥基或氰基。然而,R2c至R4c中的至少一者代表羥基或氰基。較佳為一個或兩個由R2c至R4c中選出的成員為羥基且其餘為氫原子的結構。在式(VIIa)中,更佳為兩個由R2c至R4c中選出的成員為羥基且其餘為氫原子。 In the formulae (VIIa) to (VIIc), R 2 c to R 4 c each independently represent a hydrogen atom, a hydroxyl group or a cyano group. However, at least one of R 2 c to R 4 c represents a hydroxyl group or a cyano group. It is preferred that one or two members selected from R 2 c to R 4 c are a hydroxyl group and the rest are hydrogen atoms. In the formula (VIIa), it is more preferred that two members selected from R 2 c to R 4 c are a hydroxyl group and the balance is a hydrogen atom.

具有式(VIIa)至式(VIId)所代表之部分結構的重複單元包括由下式(AIIa)至式(AIId)所代表的重複單元: The repeating unit having a partial structure represented by the formula (VIIa) to the formula (VIId) includes a repeating unit represented by the following formula (AIIa) to formula (AIId):

在式(AIIa)至通式(AIId)中,R1c代表氫原子、甲基、三氟甲基或羥甲基。 In the formula (AIIa) to the formula (AIId), R 1 c represents a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group.

R2c至R4c具有相同於式(VIIa)至式(VIIc)中之 R2c至R4c的意義。 R 2 c to R 4 c have the same in formula (Vila) in the (VIIc) to the formula R 2 c to R 4 c is meaning.

以樹脂(B)中之全部的重複單元計,具有羥基或氰基之重複單元的含量百分比較佳為5莫耳%至40莫耳%,更佳為5莫耳%至30莫耳%,再更佳為10莫耳%至25莫耳%。 The content percentage of the repeating unit having a hydroxyl group or a cyano group is preferably from 5 mol% to 40 mol%, more preferably from 5 mol% to 30 mol%, based on all the repeating units in the resin (B). More preferably, it is 10 mol% to 25 mol%.

以下繪示具有羥基或氰基之重複單元的具體實例,但本發明不受其限制。 Specific examples of the repeating unit having a hydroxyl group or a cyano group are shown below, but the invention is not limited thereto.

本發明的感光化射線性或感放射線性樹脂組成物中使用的樹脂可包含具有鹼可溶性基的重複單元。鹼可溶性基包括:羧基、磺醯胺基、磺醯亞胺基、雙磺醯亞胺基、以及α位經拉電子基(electron-withdrawing group)取代的脂肪族醇(例如六氟異丙醇基),且較佳為包含具有羧基的重複單元。藉由包含具有鹼可溶性基的重複單元,將增加在接觸孔用途中的解析度。以下全部的重複單元為較佳之作為用於具有鹼可溶性基的重複單元:鹼可溶性基直接鍵結 於樹脂之主鏈上的重複單元,其諸如由丙烯酸或甲基丙烯酸所構成的重複單元;鹼可溶性基經由連結基而鍵結於樹脂之主鏈上的重複單元;以及在聚合時藉由使用含鹼可溶性基的聚合起始劑或鏈轉移劑而將鹼可溶性基導入至聚合物鏈的末端的重複單元。連結基可具有單環或多環的環狀烴結構。特別地說,較佳為由丙烯酸或甲基丙烯酸所構成的重複單元。 The resin used in the photosensitive ray-sensitive or radiation-sensitive resin composition of the present invention may contain a repeating unit having an alkali-soluble group. The alkali-soluble group includes a carboxyl group, a sulfonylamino group, a sulfonimide group, a bissulfonimide group, and an aliphatic alcohol substituted with an electron-withdrawing group at the α-position (for example, hexafluoroisopropanol) And preferably comprises a repeating unit having a carboxyl group. By including a repeating unit having an alkali-soluble group, the resolution in the use of the contact hole will be increased. All of the following repeating units are preferred for use in repeating units having an alkali-soluble group: alkali-soluble radical direct bonding a repeating unit on the main chain of the resin, such as a repeating unit composed of acrylic acid or methacrylic acid; a repeating unit in which an alkali-soluble group is bonded to a main chain of the resin via a linking group; and by polymerization An alkali-soluble group-containing polymerization initiator or chain transfer agent to introduce an alkali-soluble group into a repeating unit at the terminal of the polymer chain. The linking group may have a monocyclic or polycyclic cyclic hydrocarbon structure. In particular, a repeating unit composed of acrylic acid or methacrylic acid is preferred.

以樹脂(B)中全部的重複單元計,具有鹼可溶性基之重複單元的含量較佳為0至20莫耳%,更佳為3莫耳%至15莫耳%,再更佳為5莫耳%至10莫耳%。 The content of the repeating unit having an alkali-soluble group is preferably from 0 to 20 mol%, more preferably from 3 mol% to 15 mol%, even more preferably 5 mol, based on all the repeating units in the resin (B). Ear to 10% by mole.

以下繪示具有鹼可溶性基之重複單元的具體實例,但本發明不受其限制。 Specific examples of the repeating unit having an alkali-soluble group are shown below, but the invention is not limited thereto.

在具體實例中,Rx代表H、CH3、CH2OH或CF3In specific examples, Rx behalf of H, CH 3, CH 2 OH or CF 3.

樹脂(B)可更包含不具有極性基(例如,上述之鹼可溶性基、羥基或氰基)之脂環烴結構且不表現出酸分解性的重複單元。此種重複單元包括由下式(IV)所代表的 重複單元: The resin (B) may further contain a repeating unit which does not have an alicyclic hydrocarbon structure of a polar group (for example, the above-mentioned alkali-soluble group, hydroxyl group or cyano group) and which does not exhibit acid decomposition property. Such a repeating unit includes a repeating unit represented by the following formula (IV):

在以上式(IV)中,R5代表具有至少一個環狀結構且不具有極性基的烴基。 In the above formula (IV), R 5 represents a hydrocarbon group having at least one cyclic structure and having no polar group.

Ra代表氫原子、烷基、或者-CH2-O-Ra2基,其中,Ra2代表氫原子、烷基或醯基。Ra較佳為氫原子、甲基、羥甲基或三氟甲基,更佳為氫原子或甲基。 Ra represents a hydrogen atom, an alkyl group, or a -CH 2 -O-Ra 2 group, wherein Ra 2 represents a hydrogen atom, an alkyl group or a fluorenyl group. Ra is preferably a hydrogen atom, a methyl group, a methylol group or a trifluoromethyl group, more preferably a hydrogen atom or a methyl group.

R5中所包含的環狀結構包括單環烴基及多環烴基。單環烴基的實例包括:碳數為3至12的環烷基,其諸如環戊基、環己基、環庚基及環辛基;以及碳數為3至12的環烯基,其諸如環己烯基。單環烴基較佳為碳數為3至7的單環烴基,更佳為環戊基或環己基。 The cyclic structure contained in R 5 includes a monocyclic hydrocarbon group and a polycyclic hydrocarbon group. Examples of the monocyclic hydrocarbon group include a cycloalkyl group having a carbon number of 3 to 12, such as a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, and a cyclooctyl group; and a cycloalkenyl group having a carbon number of 3 to 12, such as a ring. Hexenyl. The monocyclic hydrocarbon group is preferably a monocyclic hydrocarbon group having a carbon number of 3 to 7, more preferably a cyclopentyl group or a cyclohexyl group.

多環烴基包括環集合(ring assembly)烴基及交聯環(crosslinked cylic)烴基,環集合烴基的實例包括二環己基及全氫萘基。交聯環烴環的實例包括:諸如蒎烷(pinane)環、冰片烷(bornane)環、降蒎烷(norpinane)環、降莰烷(norbornane)環及二環辛烷環(例如二環[2.2.2]辛烷環、二環[3.2.1]辛烷環)之二環烴環;以及諸如同三環[4.2.1.03,7]壬烷(Homobrendane)環、金剛烷環、三環[5.2.1.02,6]癸烷環及三環[4.3.1.12,5]十一烷環之三環烴環;以及諸如四環 [4.4.0.12,5.17,10]十二烷及全氫-1,4-甲橋-5,8-甲橋萘環(perhydro-1,4-methano-5,8-methanonaphthalene ring)之四環烴環。交聯環烴環亦包括縮合環烴環,例如藉由將多個5員至8員環烷烴環縮合所形成的縮合環,其諸如全氫萘(perhydronaphthalene)(十氫萘(decalin))環、全氫蒽(perhydroanthracene)環、全氫菲(perhydrophenanthrene)環、全氫苊(perhydroacenaphthene)環、全氫茀(perhydrofluorene)環、全氫茚(perhydroindene)環及全氫萉(perhydrophenalene)環。 The polycyclic hydrocarbon group includes a ring assembly hydrocarbon group and a crosslinked cylic hydrocarbon group, and examples of the ring assembly hydrocarbon group include a dicyclohexyl group and a perhydronaphthyl group. Examples of the cross-linked cyclic hydrocarbon ring include, for example, a pinane ring, a bornane ring, a norpinane ring, a norbornane ring, and a bicyclooctane ring (for example, a bicyclo [ 2.2.2] a bicyclic hydrocarbon ring of an octane ring, a bicyclo [3.2.1] octane ring); and a homocyclic ring [4.2.1.0 3,7 ]Homobrendane ring, adamantane ring, three Ring [5.2.1.0 2,6 ]decane ring and tricyclo[4.3.1.1 2,5 ] undecane ring tricyclic hydrocarbon ring; and such as tetracyclo[4.4.0.1 2,5 .1 7,10 ] A tetracyclic hydrocarbon ring of dodecane and perhydro-1,4-methano-5,8-methanonaphthalene ring. The crosslinked cyclic hydrocarbon ring also includes a fused cyclic hydrocarbon ring, such as a condensed ring formed by condensing a plurality of 5- to 8-membered cycloalkane rings, such as perhydronaphthalene (decalin) rings. , perhydroanthracene ring, perhydrophenanthrene ring, perhydroacenaphthene ring, perhydrofluorene ring, perhydroindene ring and perhydrophenalene ring.

交聯環烴環的較佳實例包括降莰基、金剛烷基、二環辛烷基及三環[5,2,1,02,6]癸基。在這些交聯環烴環中,更佳為降莰基及金剛烷基。 Preferred examples of the crosslinked cyclic hydrocarbon ring include a fluorenyl group, an adamantyl group, a bicyclooctyl group, and a tricyclo[5,2,1,0 2,6 ]fluorenyl group. Among these crosslinked cyclic hydrocarbon rings, a decyl group and an adamantyl group are more preferred.

這些脂環烴基可具有取代基,且取代基的較佳實例包括:鹵素原子、烷基、氫原子被置換的羥基、以及氫原子被置換的胺基。鹵素原子較佳為溴原子、氯原子或氟原子,且烷基較佳為甲基、乙基、丁基或第三丁基。此烷基可更具有取代基,且烷基可更具有的取代基包括:鹵素原子、烷基、氫原子被置換的羥基、以及氫原子被置換的胺基。 These alicyclic hydrocarbon groups may have a substituent, and preferred examples of the substituent include a halogen atom, an alkyl group, a hydroxyl group in which a hydrogen atom is substituted, and an amine group in which a hydrogen atom is substituted. The halogen atom is preferably a bromine atom, a chlorine atom or a fluorine atom, and the alkyl group is preferably a methyl group, an ethyl group, a butyl group or a tert-butyl group. The alkyl group may have a more substituent, and the substituent which the alkyl group may have further includes a halogen atom, an alkyl group, a hydroxyl group in which a hydrogen atom is substituted, and an amine group in which a hydrogen atom is substituted.

氫原子被置換之基團的實例包括:烷基、環烷基、芳烷基、經取代的甲基、經取代的乙基、醯基、烷氧基羰基及芳烷氧基羰基。烷基較佳為碳數為1至4的烷基;經取代的甲基較佳為甲氧基甲基、甲氧基硫甲基、苄氧基甲基、第三丁氧基甲基或2-甲氧基乙氧基甲基;經取代的乙基較佳為1-乙氧基乙基或1-甲基-1-甲氧基乙基;醯基較佳為碳 數為1至6的脂肪族醯基,其諸如甲醯基、乙醯基、丙醯基、丁醯基、異丁醯基、戊醯基(valeryl group)及特戊醯基(pivaloyl group);以及烷氧基羰基例如為碳數為2至4的烷氧基羰基。 Examples of the group in which the hydrogen atom is replaced include an alkyl group, a cycloalkyl group, an aralkyl group, a substituted methyl group, a substituted ethyl group, a decyl group, an alkoxycarbonyl group, and an aralkoxycarbonyl group. The alkyl group is preferably an alkyl group having 1 to 4 carbon atoms; the substituted methyl group is preferably a methoxymethyl group, a methoxythiomethyl group, a benzyloxymethyl group, a third butoxymethyl group or 2-methoxyethoxymethyl; the substituted ethyl group is preferably 1-ethoxyethyl or 1-methyl-1-methoxyethyl; the fluorenyl group is preferably carbon a number 1 to 6 of an aliphatic thiol group such as a methyl group, an ethyl group, a propyl group, a butyl group, an isobutyl group, a valeryl group, and a pivaloyl group; and an alkoxy group The carbonyl group is, for example, an alkoxycarbonyl group having a carbon number of 2 to 4.

本發明中使用的樹脂(B)可包含或可不包含不具有極性基的脂環烴結構且不表現出酸分解性的重複單元。但在包含此重複單元的案例中,以樹脂(B)中全部的重複單元計,上述重複單元的含量較佳為1莫耳%至40莫耳%,更佳為2莫耳%至20莫耳%。 The resin (B) used in the present invention may or may not contain a repeating unit having no alicyclic hydrocarbon structure having a polar group and exhibiting no acid decomposition property. However, in the case of including the repeating unit, the content of the above repeating unit is preferably from 1 mol% to 40 mol%, more preferably from 2 mol% to 20 mol% based on all the repeating units in the resin (B). ear%.

以下繪示不具有極性基的脂環烴結構且不表現出酸分解性的重複單元的具體實例,但本發明不受其限制。在式中,Ra代表H、CH3、CH2OH或CF3Specific examples of the repeating unit which does not have a polar group of an alicyclic hydrocarbon structure and which does not exhibit acid decomposition property are shown below, but the invention is not limited thereto. In the formula, Ra represents H, CH 3 , CH 2 OH or CF 3 .

本發明之感光化射線性或感放射線性樹脂組成物中使用的樹脂(B)除了具有上述重複結構單元之外,為了控制乾式蝕刻抗性、標準顯影液適應性、基板密著性、抗蝕劑輪廓(resist profile)及抗蝕劑的通常必需特性(其諸如解析力、熱抗性及靈敏度)之目的而可包含各種重複結構 單元。 The resin (B) used in the photosensitive ray-sensitive or radiation-sensitive resin composition of the present invention has, in addition to the above-mentioned repeating structural unit, in order to control dry etching resistance, standard developer suitability, substrate adhesion, and resist Resist profile and the usual necessary characteristics of the resist (such as resolution, heat resistance and sensitivity) may include various repeating structures unit.

此種重複結構單元的實例包括(但不受限於)對應於下述單體的重複結構單元。 Examples of such repeating structural units include, but are not limited to, repeating structural units corresponding to the monomers described below.

得益於這些重複單元,可以對本發明之組成物中所使用之抗蝕劑的必需性能進行微調,特別是:(1)對塗佈溶劑的溶解性、(2)製膜性(玻璃轉換溫度)、(3)鹼性顯影性、(4)膜逸失(選擇親水性、疏水性或鹼可溶性基)、(5)未曝光區對基板的密著性、(6)乾式蝕刻抗性及上述相似性質。 Thanks to these repeating units, the necessary properties of the resist used in the composition of the present invention can be finely adjusted, in particular: (1) solubility in a coating solvent, and (2) film forming property (glass transition temperature) ), (3) alkaline developability, (4) film loss (selection of hydrophilicity, hydrophobicity or alkali-soluble group), (5) adhesion of unexposed areas to the substrate, (6) dry etching resistance and the above Similar properties.

單體的實例包括具有選自丙烯酸酯類、甲基丙烯酸酯類、丙烯醯胺類、甲基丙烯醯胺類、烯丙基化合物、乙烯醚類及乙烯酯類中之一個加成聚合性不飽和鍵的化合物。 Examples of the monomer include one having an addition polymerization property selected from the group consisting of acrylates, methacrylates, acrylamides, methacrylamides, allyl compounds, vinyl ethers, and vinyl esters. A compound that saturates the bond.

除此這些之外,亦可使能夠與對應於上述各種重複結構單元之單體進行共聚合的加成聚合性不飽和化合物進行共聚合。 In addition to these, it is also possible to copolymerize an addition polymerizable unsaturated compound which can be copolymerized with a monomer corresponding to each of the above various repeating structural units.

本發明之感光化射線性或感放射線性樹脂組成物中使用的樹脂(B)中,可以適當設定個別重複結構單元的包含莫耳比以控制抗蝕劑的乾式蝕刻抗性、標準顯影液適應性、基板密著性、抗蝕劑輪廓及抗蝕劑的通常的必需性能(其諸如解析力、耐熱性、靈感度)。 In the resin (B) used in the photosensitive ray-sensitive or radiation-sensitive resin composition of the present invention, the dry etching resistance of the individual repeating structural unit including the molar ratio can be appropriately set to control the resist, and the standard developer can be adapted. Properties, substrate adhesion, resist profile, and the usual necessary properties of the resist (such as resolution, heat resistance, inspiration).

在本發明之感光化射線性或感放射線性樹脂組成物用於ArF曝光的案例中,以對ArF光的透明性的觀點而言, 本發明之組成物中使用的樹脂(B)較佳實質上不具有芳香族基。更具體而言,樹脂(B)的所有重複單元中,含芳香族基的重複單元的比例較佳為5莫耳%或5莫耳%更少,更佳為3莫耳%或3莫耳%以下,且理想為0莫耳%,亦即不包含具有芳香族基的重複單元。又樹脂(B)較佳具有單環或多環的脂環烴結構。 In the case where the sensitizing ray-sensitive or radiation-sensitive resin composition of the present invention is used for ArF exposure, from the viewpoint of transparency to ArF light, The resin (B) used in the composition of the present invention preferably has substantially no aromatic group. More specifically, in all of the repeating units of the resin (B), the proportion of the aromatic group-containing repeating unit is preferably 5 mol% or less, more preferably 5 mol% or less, more preferably 3 mol% or 3 mol% % or less, and desirably 0% by mole, that is, does not contain a repeating unit having an aromatic group. Further, the resin (B) preferably has a monocyclic or polycyclic alicyclic hydrocarbon structure.

又,以與後述為第二樹脂之疏水性樹脂之相容性的觀點來看,樹脂(B)較佳不包含氟原子或矽原子。 Further, the resin (B) preferably does not contain a fluorine atom or a ruthenium atom from the viewpoint of compatibility with a hydrophobic resin of the second resin described later.

本發明之組成物中使用的樹脂(B)較佳為全部的重複單元皆是由(甲基)丙烯酸酯系重複單元所組成的樹脂。在此案例中,全部的重複單元可為甲基丙烯酸酯系重複單元、全部的重複單元可為丙烯酸酯系重複單元、或者全部的重複單元可由甲基丙烯酸酯系重複單元及丙烯酸酯系重複單元組成,但以全部重複單元計,丙烯酸酯系重複單元的含量較佳為50莫耳%或50莫耳%以下。共聚合聚合物亦較佳包含20莫耳%至50莫耳%的含酸分解性基之(甲基)丙烯酸酯系重複單元、20莫耳%至50莫耳%的含內酯基之(甲基)丙烯酸酯系重複單元、5莫耳%至30莫耳%之具有經羥基或氰基取代之脂環烴結構的(甲基)丙烯酸酯系重複單元、以及0至20莫耳%之其他的(甲基)丙烯酸酯系重複單元。 The resin (B) used in the composition of the present invention preferably has all of the repeating units being a resin composed of a (meth) acrylate-based repeating unit. In this case, all of the repeating units may be methacrylate-based repeating units, all of the repeating units may be acrylate-based repeating units, or all of the repeating units may be methacrylate-based repeating units and acrylate-based repeating units. The composition, but the content of the acrylate-based repeating unit is preferably 50% by mole or less by 50% by mole based on the total of the repeating units. The copolymerized polymer also preferably contains from 20 mol% to 50 mol% of the acid-decomposable group-containing (meth) acrylate-based repeating unit, and from 20 mol% to 50 mol% of the lactone-containing group ( a methyl (meth) acrylate repeating unit, 5 mol% to 30 mol% of a (meth) acrylate repeating unit having a hydroxy or cyano substituted alicyclic hydrocarbon structure, and 0 to 20 mol% Other (meth) acrylate repeating units.

在以KrF準分子雷射、電子束、X射線或50奈米或50奈米以下之高能量束(例如EUV)照射本發明之組成物的案例中,樹脂(B)較佳更包含羥基苯乙烯系重複單 元。更佳為包含羥基苯乙烯系重複單元、藉由酸分解性基保護的羥基苯乙烯系重複單元、以及諸如(甲基)丙烯酸三級烷基酯之酸分解性重複單元。 In the case of irradiating the composition of the present invention with a KrF excimer laser, electron beam, X-ray or a high energy beam of 50 nm or less (for example, EUV), the resin (B) preferably further contains hydroxybenzene. Vinyl repeat yuan. More preferably, it is a hydroxystyrene-based repeating unit, a hydroxystyrene-based repeating unit protected by an acid-decomposable group, and an acid-decomposable repeating unit such as a tertiary alkyl (meth)acrylate.

具有酸分解性基之羥基苯乙烯系重複單元的較佳實例包括:由第三丁氧基羰氧基苯乙烯、1-烷氧基乙氧基苯乙烯或(甲基)丙烯酸三級烷基酯所組成的重複單元。更佳為由(甲基)丙烯酸2-烷基-2金剛烷酯或(甲基)丙烯酸二烷基(1-金剛烷基)甲酯所組成的重複單元。 Preferable examples of the hydroxystyrene-based repeating unit having an acid-decomposable group include: a third butoxycarbonyloxystyrene, a 1-alkoxyethoxystyrene or a tertiary alkyl (meth)acrylate a repeating unit composed of esters. More preferably, it is a repeating unit consisting of 2-alkyl-2adamantyl (meth)acrylate or dialkyl (1-adamantyl)methyl (meth)acrylate.

可以藉由習知的方法(例如自由基聚合)來合成本發明的樹脂(B)。通常合成方法的實例包括:分批聚合法(batch polymerization method),其於溶劑中溶解單體物質及起始劑並加熱溶液,從而致使聚合作用;以及滴入式聚合法(dropping polymerization method),其在1小時至10小時的時間內向經加熱之溶劑逐滴添加包含單體物質及起始劑之溶液。較佳為滴入式聚合法。反應溶劑的實例包括諸如四氫呋喃、1,4-二噁烷、二異丙醚的醚類、諸如甲基乙酮及甲基異丁酮的酮類、諸如乙酸乙酯的酯類溶劑、諸如二甲基甲醯胺及二甲基乙醯胺的醯胺類溶劑、以及能夠溶解本發明之組成物的後述溶劑,其諸如丙二醇單甲醚乙酸酯(propylene glycol monomethyl ether acetate,PGMEA,另一名稱:1-甲氧基-2-乙醯氧基丙烷(1-methoxy-2-acet oxypropane))、丙二醇單甲醚(propylene glycol monomethyl ether,PGME,另一名稱:1-甲氧基-2-丙醇)及環己酮。更佳為使用與本發明感光化射性或感放射線性樹脂組成物 中所使用之溶劑的相同溶劑來進行聚合。藉由相同溶劑的使用,可以抑制儲存期間之粒子產生。 The resin (B) of the present invention can be synthesized by a conventional method such as radical polymerization. Examples of the usual synthesis method include: a batch polymerization method which dissolves a monomer substance and an initiator in a solvent and heats the solution to cause polymerization; and a dropping polymerization method, It adds a solution containing a monomer substance and an initiator to the heated solvent dropwise over a period of from 1 hour to 10 hours. A drop-in polymerization method is preferred. Examples of the reaction solvent include ethers such as tetrahydrofuran, 1,4-dioxane, diisopropyl ether, ketones such as methyl ethyl ketone and methyl isobutyl ketone, ester solvents such as ethyl acetate, such as two A guanamine solvent of methylformamide and dimethylacetamide, and a solvent which can dissolve the composition of the present invention, such as propylene glycol monomethyl ether acetate (PGMEA, another Name: 1-methoxy-2-acetoxypropane), propylene glycol monomethyl ether (PGME, another name: 1-methoxy-2) -propanol) and cyclohexanone. More preferably, the photosensitive sensitizing or radiation sensitive resin composition of the present invention is used. The same solvent as the solvent used in the polymerization is used for the polymerization. By the use of the same solvent, particle generation during storage can be suppressed.

聚合反應較佳為在諸如氮或氬之惰性氣體氛圍中進行。使用市售的自由基起始劑(例如偶氮系起始劑、過氧化物)作為聚合起始劑來開始聚合。自由基起始劑較佳為偶氮系起始劑,且較佳為具有酯基、氰基或羧基的偶氮系起始劑。起始劑的較佳實例包括偶氮雙異丁腈、偶氮雙二甲基戊腈及二甲基2,2'-偶氮雙(2-甲基丙酸酯)。若有需要時則追加或分次添加起始劑。反應完成後,將反應產物投入至溶劑中,並藉由諸如粉體或者固體回收之方法來回收所需的聚合物。反應的濃度為5質量%至50質量%,較佳為10質量%至30質量%;且反應溫度通常為10℃至150℃,較佳為30℃至120℃,更佳為60℃至100℃。(在此說明書中,質量比相等於重量比)。 The polymerization is preferably carried out in an inert gas atmosphere such as nitrogen or argon. The polymerization is started using a commercially available radical initiator (for example, an azo initiator, a peroxide) as a polymerization initiator. The radical initiator is preferably an azo initiator, and is preferably an azo initiator having an ester group, a cyano group or a carboxyl group. Preferable examples of the initiator include azobisisobutyronitrile, azobisdimethylvaleronitrile, and dimethyl 2,2'-azobis(2-methylpropionate). If necessary, additional or additional initiators are added. After the reaction is completed, the reaction product is charged into a solvent, and the desired polymer is recovered by a method such as powder or solid recovery. The concentration of the reaction is from 5% by mass to 50% by mass, preferably from 10% by mass to 30% by mass; and the reaction temperature is usually from 10 ° C to 150 ° C, preferably from 30 ° C to 120 ° C, more preferably from 60 ° C to 100 ° °C. (In this specification, the mass ratio is equal to the weight ratio).

根據利用聚苯乙烯的凝膠滲透層析法(gel permeation chromatography,GPC法),本發明中所使用之樹脂(B)的重量平均分子量較佳為1,000至200,000,更佳為2,000至20,000,再更佳為3,000至15,000,又再更佳為3,000至10,000。當重量平均分子量為1,000至200,000時,可以避免熱抗性及乾式蝕刻抗性的減少,同時,可以避免製膜性由於可顯影性的減損或黏度的增加而劣化。 The resin (B) used in the present invention preferably has a weight average molecular weight of 1,000 to 200,000, more preferably 2,000 to 20,000, according to gel permeation chromatography (GPC method) using polystyrene. More preferably, it is 3,000 to 15,000, and still more preferably 3,000 to 10,000. When the weight average molecular weight is from 1,000 to 200,000, heat resistance and reduction in dry etching resistance can be avoided, and at the same time, deterioration of film formability due to deterioration of developability or increase in viscosity can be avoided.

分散度(分子量分布)通常為1.0至3.0,較佳為1.0至2.6、更佳為1.0至2.0、再更佳為1.4至2.0。分子量分布越小,解析度及抗蝕劑輪廓越優異、抗蝕劑圖案的側壁 越光滑、以及越能改善粗糙度。 The degree of dispersion (molecular weight distribution) is usually from 1.0 to 3.0, preferably from 1.0 to 2.6, more preferably from 1.0 to 2.0, still more preferably from 1.4 to 2.0. The smaller the molecular weight distribution, the more excellent the resolution and the resist profile, and the side walls of the resist pattern. The smoother and the more the roughness is improved.

在本發明中,以總固體含量計,樹脂(B)在整體組成物中的混合比較佳為30質量%至99質量%,更佳為60質量%至95質量%。 In the present invention, the mixing of the resin (B) in the overall composition is preferably from 30% by mass to 99% by mass, more preferably from 60% by mass to 95% by mass based on the total solid content.

可使用一種或組合使用多種樹脂作為用於本發明的樹脂。 A plurality of resins may be used one kind or in combination as the resin used in the present invention.

順帶一提,用於本發明中之樹脂(B)以外的樹脂可組合使用,只要其不減損本發明的效率即可。用於本發明中之樹脂(B)以外的樹脂包括可包含上述可以包含於樹脂(B)中之重複單元的酸分解性樹脂、以及其他已知的酸分解性樹脂。 Incidentally, the resins other than the resin (B) used in the present invention may be used in combination as long as they do not detract from the efficiency of the present invention. The resin other than the resin (B) used in the present invention includes an acid-decomposable resin which may include the above-mentioned repeating unit which may be contained in the resin (B), and other known acid-decomposable resins.

[3]疏水性樹脂 [3] Hydrophobic resin

本發明的感光化射線性或感放射線性樹脂組成物特別在應用於液浸曝光時,可包含具有氟原子或矽原子的疏水性樹脂(下文中,有些時候簡稱為「疏水性樹脂(HR)」)。疏水性樹脂(HR)不均勻地分布於膜表層,且當液浸介質為水的情況下,疏水性樹脂(HR)可以提高抗蝕劑膜表面對水的靜態/動態接觸角,亦可提高液浸液體的追隨性(fo-llowability)。 The photosensitive ray-sensitive or radiation-sensitive resin composition of the present invention may contain a hydrophobic resin having a fluorine atom or a ruthenium atom particularly when applied to liquid immersion exposure (hereinafter, sometimes referred to as "hydrophobic resin (HR) for some times). "). The hydrophobic resin (HR) is unevenly distributed on the surface layer of the film, and when the liquid immersion medium is water, the hydrophobic resin (HR) can increase the static/dynamic contact angle of the surface of the resist film to water, and can also be improved. The le-liquidity of the liquid immersion liquid (fo-llowability).

如上所述,疏水性樹脂(HR)不均勻地分布於界面,但與界面活性劑不同,疏水性樹脂(HR)未必需要在分子內具有親水基,且對於將極性/非極性物質均勻混合而言可以沒有幫助。 As described above, the hydrophobic resin (HR) is unevenly distributed at the interface, but unlike the surfactant, the hydrophobic resin (HR) does not necessarily need to have a hydrophilic group in the molecule, and is uniformly mixed for the polar/nonpolar substance. Words can be helpless.

疏水性樹脂典型地包含氟原子及/或矽原子。疏水性樹 脂(HR)中的氟原子及/或矽原子可包含於樹脂的主鏈中,或可包含於側鏈中。 The hydrophobic resin typically contains a fluorine atom and/or a germanium atom. Hydrophobic tree The fluorine atom and/or the ruthenium atom in the fat (HR) may be contained in the main chain of the resin or may be contained in the side chain.

在疏水性樹脂包含氟原子的案例中,樹脂較佳包含含氟原子的烷基、含氟原子的環烷基或含氟原子的芳基作為含氟原子的部分結構。 In the case where the hydrophobic resin contains a fluorine atom, the resin preferably has a fluorine atom-containing alkyl group, a fluorine atom-containing cycloalkyl group or a fluorine atom-containing aryl group as a fluorine atom-containing partial structure.

含氟原子的烷基為至少一個氫原子置換為氟原子的直鏈型或分支型烷基,且較佳為碳數為1至10的烷基,更佳為碳數為1至4的烷基,且可更具有氟原子外的其他取代基。 The fluorine atom-containing alkyl group is a linear or branched alkyl group in which at least one hydrogen atom is substituted with a fluorine atom, and is preferably an alkyl group having 1 to 10 carbon atoms, more preferably an alkyl group having 1 to 4 carbon atoms. And may have other substituents other than a fluorine atom.

含氟原子的環烷基為至少一個氫原子置換為氟原子的單環或多環環烷基,且可更具有氟原子外的其他取代基。 The cycloalkyl group having a fluorine atom is a monocyclic or polycyclic cycloalkyl group in which at least one hydrogen atom is substituted with a fluorine atom, and may further have other substituents other than a fluorine atom.

含氟原子的芳基包括諸如苯基及萘基之芳基,其至少一個氫原子置換為氟原子,且可更具有氟原子外的其他取代基。 The fluorine atom-containing aryl group includes an aryl group such as a phenyl group and a naphthyl group, at least one hydrogen atom is substituted with a fluorine atom, and may further have other substituents other than a fluorine atom.

含氟原子的烷基、含氟原子的環烷基及含氟原子的芳基的較佳實例包括下列式(F2)至式(F4)的任意一者所代表的基團,但本發明不受其限制。 Preferable examples of the fluorine atom-containing alkyl group, the fluorine atom-containing cycloalkyl group, and the fluorine atom-containing aryl group include a group represented by any one of the following formulas (F2) to (F4), but the present invention does not Limited by it.

在式(F2)至式(F4)中,R57至R68各獨立代表氫原子、氟原子或烷基(直鏈型或分支型)。其限制條件為,R57至R61的至少一者、R62至R64的至少一者及R65至R68的至少一者獨立為氟原子或至少一個氫原子置換為氟原子的烷基(較佳碳數為1至4)。 In the formulae (F2) to (F4), R 57 to R 68 each independently represent a hydrogen atom, a fluorine atom or an alkyl group (linear or branched). The restriction is that at least one of R 57 to R 61 , at least one of R 62 to R 64 and at least one of R 65 to R 68 are independently a fluorine atom or an alkyl group in which at least one hydrogen atom is replaced by a fluorine atom. ( Preferably, the carbon number is from 1 to 4).

較佳為R57至R61及R65至R67全部為氟原子。R62、R63及R68各較佳為氟烷基(較佳碳數為1至4),更佳為碳數為1至4的全氟烷基。當R62及R63為全氟烷基時,較佳為R64為氫原子。R62與R63可彼此結合以形成環。 Preferably, R 57 to R 61 and R 65 to R 67 are all fluorine atoms. R 62 , R 63 and R 68 are each preferably a fluoroalkyl group (preferably having a carbon number of 1 to 4), more preferably a perfluoroalkyl group having a carbon number of 1 to 4. When R 62 and R 63 are a perfluoroalkyl group, R 64 is preferably a hydrogen atom. R 62 and R 63 may be bonded to each other to form a ring.

式(F2)所代表之基團的具體實例包括:對氟苯基、五氟苯基及3,5-二(三氟甲基)苯基。 Specific examples of the group represented by the formula (F2) include: p-fluorophenyl group, pentafluorophenyl group, and 3,5-bis(trifluoromethyl)phenyl group.

式(F3)所代表之基團的具體實例包括:三氟甲基、五氟丙基、五氟乙基、七氟丁基、六氟異丙基、七氟異丙基、六氟(2-甲基)異丙基、九氟丁基、八氟異丁基、九氟己基、九氟-第三丁基、全氟異戊基、全氟辛基、全氟(三甲基)己基、2,2,3,3-四氟環丁基及全氟環己基。在這些實例中,較佳為六氟異丙基、七氟異丙基、六氟(2-甲基)異丙基、八氟異丁基、九氟-第三丁基及全氟異戊基,更佳為六氟異丙基及七氟異丙基。 Specific examples of the group represented by the formula (F3) include: trifluoromethyl, pentafluoropropyl, pentafluoroethyl, heptafluorobutyl, hexafluoroisopropyl, heptafluoroisopropyl, hexafluoro (2 -Methyl)isopropyl, nonafluorobutyl, octafluoroisobutyl, nonafluorohexyl, nonafluoro-tert-butyl, perfluoroisopentyl, perfluorooctyl, perfluoro(trimethyl)hexyl 2,2,3,3-tetrafluorocyclobutyl and perfluorocyclohexyl. In these examples, preferred are hexafluoroisopropyl, heptafluoroisopropyl, hexafluoro(2-methyl)isopropyl, octafluoroisobutyl, nonafluoro-tert-butyl and perfluoroisoprene. More preferably, it is hexafluoroisopropyl and heptafluoroisopropyl.

式(F4)所代表之基團的具體實例包括:-C(CF3)2OH、-C(C2F5)2OH、-C(CF3)(CH3)OH及-CH(CF3)OH,以-C(CF3)2OH為較佳。 Specific examples of the group represented by the formula (F4) include: -C(CF 3 ) 2 OH, -C(C 2 F 5 ) 2 OH, -C(CF 3 )(CH 3 )OH, and -CH(CF 3 ) OH, preferably -C(CF 3 ) 2 OH.

含氟原子的部分結構可直接鍵結於主鏈上,或可經由選自由伸烷基、伸苯基、醚鍵、硫醚鍵、羰基、酯鍵、醯 胺鍵、胺基甲酸酯鍵及伸脲鍵所組成之族群中的基團、或者將其兩者或兩者以上結合而成的基團來鍵結於主鏈上。 The partial structure of the fluorine-containing atom may be directly bonded to the main chain, or may be selected from an alkyl group, a phenyl group, an ether bond, a thioether bond, a carbonyl group, an ester bond, or an anthracene. A group in a group consisting of an amine bond, a urethane bond, and a urea-forming bond, or a group obtained by combining two or more of them, is bonded to the main chain.

具有氟原子的重複單元較佳為以下所示的重複單元。 The repeating unit having a fluorine atom is preferably a repeating unit shown below.

在式中,R10及R11各獨立代表氫原子、氟原子或者烷基。烷基較佳為碳數為1至4的直鏈型或分支型的烷基且可具有取代基,而具有取代基的烷基特別包括氟化烷基。 In the formula, R 10 and R 11 each independently represent a hydrogen atom, a fluorine atom or an alkyl group. The alkyl group is preferably a linear or branched alkyl group having a carbon number of 1 to 4 and may have a substituent, and the alkyl group having a substituent particularly includes a fluorinated alkyl group.

W3至W6各獨立代表具有至少一個或多個氟原子的有機基。其具體實例包括(F2)至(F4)的原子基團。 W 3 to W 6 each independently represent an organic group having at least one or more fluorine atoms. Specific examples thereof include atomic groups of (F2) to (F4).

除了這些基團以外,疏水性樹脂(C)可包含以下所示之單元來作為具有氟原子的重複單元。 In addition to these groups, the hydrophobic resin (C) may contain a unit shown below as a repeating unit having a fluorine atom.

在式中,R4至R7各獨立代表氫原子、氟原子或烷基。烷基較佳為碳數為1至4的直鏈型或分支型的烷基且可具有取代基,而具有取代基的烷基特別包括氟化烷基。 In the formula, R 4 to R 7 each independently represent a hydrogen atom, a fluorine atom or an alkyl group. The alkyl group is preferably a linear or branched alkyl group having a carbon number of 1 to 4 and may have a substituent, and the alkyl group having a substituent particularly includes a fluorinated alkyl group.

然而,R4至R7的至少一者代表氟原子。一對R4與R5或一對R6與R7形成環。 However, at least one of R 4 to R 7 represents a fluorine atom. A pair of R 4 and R 5 or a pair of R 6 and R 7 form a ring.

W2代表包含至少一個氟原子的有機基。其具體實例包括(F2)至(F4)的原子團。 W 2 represents an organic group containing at least one fluorine atom. Specific examples thereof include atomic groups of (F2) to (F4).

L2代表單鍵或二價連結基。二價連結基代表經取代或未經取代的伸芳基、經取代或未經取代的伸烷基、經取代或未經取代的伸環烷基、-O-、-SO2-、-CO-、-N(R)-(其中,R代表氫原子或烷基)、-NHSO2-、或者藉由結合多個這些基團而成的二價連結基。 L 2 represents a single bond or a divalent linking group. The divalent linking group represents a substituted or unsubstituted extended aryl group, a substituted or unsubstituted alkylene group, a substituted or unsubstituted stretched alkyl group, -O-, -SO 2 -, -CO -, -N(R)- (wherein R represents a hydrogen atom or an alkyl group), -NHSO 2 -, or a divalent linking group formed by combining a plurality of these groups.

Q代表脂環結構。脂環結構可具有取代基,且可為單環或多環,而在多環的案例中,結構可為交聯式。單環結構較佳為碳數為3至8的環烷基,且其實例包括:環戊基、環己基、環丁基及環辛基。多環結構的實例包括碳數為5或5以上的二環、三環或四環結構的基團。較佳為碳數為6至20的環烷基,且其實例包括:金剛烷基、降莰基、二環戊基(dicyclopentyl group)、三環癸基及四環十二烷基。環烷基中的至少一個碳原子可置換為諸如氧原子的雜原子。特別地說,Q較佳為例如降莰基、三環癸基或四環十二烷基。 Q represents an alicyclic structure. The alicyclic structure may have a substituent and may be a monocyclic or polycyclic ring, and in the case of a polycyclic ring, the structure may be a crosslinked one. The monocyclic structure is preferably a cycloalkyl group having a carbon number of 3 to 8, and examples thereof include a cyclopentyl group, a cyclohexyl group, a cyclobutyl group, and a cyclooctyl group. Examples of the polycyclic structure include a bicyclic, tricyclic or tetracyclic structure having a carbon number of 5 or more. A cycloalkyl group having a carbon number of 6 to 20 is preferable, and examples thereof include an adamantyl group, a norbornyl group, a dicyclopentyl group, a tricyclodecyl group, and a tetracyclododecyl group. At least one carbon atom in the cycloalkyl group may be substituted with a hetero atom such as an oxygen atom. In particular, Q is preferably, for example, a thiol group, a tricyclodecanyl group or a tetracyclododecyl group.

疏水性樹脂可包含矽原子。較佳為具有烷基矽烷基結構(較佳為三烷基矽烷基)或環狀矽氧烷結構作為含矽原 子的部分結構的樹脂。 The hydrophobic resin may contain a ruthenium atom. Preferably, it has an alkyl fluorenyl structure (preferably a trialkyl decyl group) or a cyclic decane structure as a ruthenium containing Part of the structure of the resin.

烷基矽烷基結構及環狀矽氧烷結構的具體實例包括由下式(CS-1)至式(CS-3)所代表的基團: Specific examples of the alkyl fluorenyl structure and the cyclic siloxane structure include groups represented by the following formula (CS-1) to formula (CS-3):

在式(CS-1)至式(CS-3)中,R12至R26各獨立代表直鏈型或分支型烷基(較佳碳數為1至20)或環烷基(較佳碳數為3至20)。 In the formulae (CS-1) to (CS-3), R 12 to R 26 each independently represent a linear or branched alkyl group (preferably having a carbon number of 1 to 20) or a cycloalkyl group (preferably carbon). The number is 3 to 20).

L3至L5各代表單鍵或二價連結基。二價連結基包括選自由伸烷基、伸苯基、醚鍵、硫醚鍵、羰基、酯鍵、醯胺鍵、胺基甲酸酯鍵、或者伸脲鍵所組成之族群中的單獨一個基團或者兩個或兩個以上基團的組合。 L 3 to L 5 each represent a single bond or a divalent linking group. The divalent linking group includes a single one selected from the group consisting of alkylene, phenyl, ether, thioether, carbonyl, ester, amide, urethane, or urea linkages. A group or a combination of two or more groups.

n代表1至5的整數。n較佳為2至4的整數。 n represents an integer of 1 to 5. n is preferably an integer of 2 to 4.

具有氟原子或矽原子的重複單元較佳為(甲基)丙烯酸酯系重複單元。 The repeating unit having a fluorine atom or a ruthenium atom is preferably a (meth) acrylate-based repeating unit.

以下繪示具有氟原子或矽原子的重複單元的具體實例,但本發明不受其限制。在具體實例中,X1代表氫原子、-CH3、-F或-CF3,而X2代表-F或-CF3Specific examples of the repeating unit having a fluorine atom or a halogen atom are shown below, but the invention is not limited thereto. In a specific example, X 1 represents a hydrogen atom, -CH 3 , -F or -CF 3 , and X 2 represents -F or -CF 3 .

疏水性樹脂較佳為包含具有選自由下列(x)至(z)所組成之族群中的至少一個基團的重複單元(b):鹼可溶性基(x);基團(y),能夠藉由鹼性顯影液的作用而分解以增加對鹼性顯影液之溶解度(下文中,有些時候簡稱為極性變換基);以及基團(z),能夠藉由酸的作用而分解以增加對鹼性顯影液之溶解度。 The hydrophobic resin preferably comprises a repeating unit (b) having at least one group selected from the group consisting of (x) to (z): an alkali-soluble group (x); a group (y) capable of borrowing Decomposed by the action of an alkaline developing solution to increase the solubility to an alkaline developing solution (hereinafter, sometimes referred to simply as a polar converting group); and the group (z), which can be decomposed by the action of an acid to increase the alkalinity The solubility of the developer.

重複單元(b)包括下列類型:重複單元(b'),在一個側鏈上具有氟原子或矽原子以及選自由(x)至(z)所組成之族群中之至少一個基團;重複單元(b*),具有選自由以上(x)至(z)所組成之族群中的至少一個基團,同時不具有氟原子或矽原子;以及重複單元(b"),在一個側鏈上具有選自由以上(x)至(z)所組成之族群中的至少一個基團,且同時在同一重複單元內之與以上側鏈不同的側鏈上具有氟原子或矽原子中的至少任意者。 The repeating unit (b) includes the following types: a repeating unit (b') having a fluorine atom or a halogen atom on one side chain and at least one group selected from the group consisting of (x) to (z); (b*) having at least one group selected from the group consisting of (x) to (z) above, without a fluorine atom or a ruthenium atom; and a repeating unit (b") having a side chain At least one of the groups consisting of the above (x) to (z) is selected, and at the same time, at least any one of a fluorine atom or a ruthenium atom in the side chain different from the above side chain in the same repeating unit.

疏水性樹脂更佳為包含重複單元(b')作為重複單元(b)。換句話說,更佳為具有選自由以上(x)至(z)所組成之族群中的至少一個基團的重複單元(b)具有氟原子或矽原子。 More preferably, the hydrophobic resin contains a repeating unit (b') as a repeating unit (b). In other words, it is more preferred that the repeating unit (b) having at least one group selected from the group consisting of the above (x) to (z) has a fluorine atom or a halogen atom.

在疏水性樹脂包含重複單元(b*)的案例中,樹脂較佳為與具有氟原子或矽原子的重複單元(與以上重複單元 (b')及重複單元(b")不同的重複單元)的共聚物。又,在重複單元(b")中,具有選自由(x)至(z)所組成之族群中的至少一個基團的側鏈及具有氟原子或矽原子的側鏈較佳鍵結於主鏈中的同一碳原子上,亦即,具有如下式(K1)中的位置關係。 In the case where the hydrophobic resin contains the repeating unit (b*), the resin is preferably a repeating unit having a fluorine atom or a ruthenium atom (with the above repeating unit) a copolymer of (b') and a repeating unit (b") different repeating unit). Further, in the repeating unit (b"), having at least one group selected from the group consisting of (x) to (z) The side chain of the group and the side chain having a fluorine atom or a ruthenium atom are preferably bonded to the same carbon atom in the main chain, that is, have a positional relationship in the following formula (K1).

在式中,B1代表具有選自由(x)至(z)所組成之族群中的至少一個基團的部分結構,而B2代表具有氟原子或矽原子的部分結構。 In the formula, B1 represents a partial structure having at least one group selected from the group consisting of (x) to (z), and B2 represents a partial structure having a fluorine atom or a ruthenium atom.

選自由(x)至(z)所組成之族群中的基團較佳為鹼可溶性基(x)或極性變換基(y),更佳為極性變換基(y)。 The group selected from the group consisting of (x) to (z) is preferably an alkali-soluble group (x) or a polar group (y), more preferably a polar group (y).

鹼可溶性基(x)的實例包括:酚性羥基、羧酸基、氟化醇基、磺酸基、磺醯胺基、磺醯亞胺基、(烷基磺醯基)(烷基羰基)亞甲基、(烷基磺醯基)(烷基羰基)醯亞胺基、雙(烷基羰基)亞甲基、雙(烷基羰基)醯亞胺基、雙(烷基磺醯基)亞甲基、雙(烷基磺醯基)醯亞胺基、三(烷基羰基)亞甲基、以及三(烷基磺醯基)亞甲基。 Examples of the alkali-soluble group (x) include: a phenolic hydroxyl group, a carboxylic acid group, a fluorinated alcohol group, a sulfonic acid group, a sulfonylamino group, a sulfonimide group, an (alkylsulfonyl group) (alkylcarbonyl group) Methylene, (alkylsulfonyl) (alkylcarbonyl) fluorenylene, bis(alkylcarbonyl)methylene, bis(alkylcarbonyl)indenylene, bis(alkylsulfonyl) Methylene, bis(alkylsulfonyl) fluorenylene, tris(alkylcarbonyl)methylene, and tris(alkylsulfonyl)methylene.

較佳的鹼可溶性基包括:氟化醇基(較佳為六氟異丙醇)、磺醯亞胺基、以及雙(羰基)亞甲基。 Preferred alkali-soluble groups include a fluorinated alcohol group (preferably hexafluoroisopropanol), a sulfonimide group, and a bis(carbonyl)methylene group.

具有鹼可溶性基(x)的重複單元(bx)包括:鹼可溶性基直接鍵結在樹脂之主鏈上的重複單元,其諸如衍生自 丙烯酸或甲基丙烯酸的重複單元;以及鹼可溶性基經由連結基而鍵結在樹脂之主鏈上的重複單元。再者,可在聚合時藉由使用含鹼可溶性基的聚合起始劑或鏈轉移劑而將鹼可溶性基導入至聚合物鏈的末端。這些案例全部較佳。 The repeating unit (bx) having an alkali-soluble group (x) includes a repeating unit in which an alkali-soluble group is directly bonded to a main chain of the resin, such as derived from a repeating unit of acrylic acid or methacrylic acid; and a repeating unit in which an alkali-soluble group is bonded to a main chain of the resin via a linking group. Further, an alkali-soluble group may be introduced to the terminal of the polymer chain by polymerization using a polymerization initiator or a chain transfer agent containing an alkali-soluble group. These cases are all better.

在重複單元(bx)為具有氟原子或矽原子的重複單元的案例(亦即,對應於重複單元(b')或重複單元(b")的案例)中,重複單元(bx)中之含氟原子的部分結構的實例相同於上述具有氟原子或矽原子的重複單元的實例,且較佳為由式(F2)至式(F4)所代表的基團。又,重複單元(bx)中之含矽原子的部分的實例相同於上述具有氟原子或矽原子的重複單元的實例,且較佳為由式(CS-1)至式(CS-3)所代表的基團。 In the case where the repeating unit (bx) is a repeating unit having a fluorine atom or a halogen atom (that is, a case corresponding to the repeating unit (b') or the repeating unit (b")), the content in the repeating unit (bx) Examples of the partial structure of the fluorine atom are the same as those of the above repeating unit having a fluorine atom or a halogen atom, and are preferably a group represented by the formula (F2) to the formula (F4). Further, in the repeating unit (bx) Examples of the moiety containing a halogen atom are the same as those of the above repeating unit having a fluorine atom or a halogen atom, and are preferably a group represented by the formula (CS-1) to the formula (CS-3).

以疏水性樹脂中之全部的重複單元計,具有鹼可溶性基(x)的重複單元(bx)的含量較佳為1莫耳%至50莫耳%,更佳為3莫耳%至35莫耳%,再更佳為5莫耳%至20莫耳%。 The content of the repeating unit (bx) having an alkali-soluble group (x) is preferably from 1 mol% to 50 mol%, more preferably from 3 mol% to 35 mol%, based on all the repeating units in the hydrophobic resin. Ear %, more preferably 5 mole % to 20 mole %.

以下繪示具有鹼可溶性基(x)的重複單元(bx)的具體實例,但本發明不受其限制。在具體實例中,X1代表氫原子、-CH3、-F或-CF3Specific examples of the repeating unit (bx) having an alkali-soluble group (x) are shown below, but the invention is not limited thereto. In a specific example, X 1 represents a hydrogen atom, -CH 3 , -F or -CF 3 .

在式中,Rx代表H、CH3、CF3或CH2OH。 In the formula, Rx represents H, CH 3 , CF 3 or CH 2 OH.

極性變換基(y)的實例包括:內酯基、羧酸酯基(-COO-)、酸酐基(-C(O)OC(O)-)、酸醯亞胺基(-NHCONH-)、羧酸硫酯基(-COS-)、碳酸酯基(-OC(O)O-)、硫酸酯基(-OSO2O-)、以及磺酸酯基(-SO2O-),以內酯基為較佳。 Examples of the polar conversion group (y) include a lactone group, a carboxylate group (-COO-), an acid anhydride group (-C(O)OC(O)-), an acid sulfonimide group (-NHCONH-), Carboxylic acid ester group (-COS-), carbonate group (-OC(O)O-), sulfate group (-OSO 2 O-), and sulfonate group (-SO 2 O-), lactone The base is preferred.

極性變換基(y)較佳為以下兩者:基團例如包含於衍生自丙烯酸酯或甲基丙烯酸酯的重複單元中,且從而被導入於樹脂之側鏈的實施例;以及基團藉由使用具有極性變換基(y)的聚合起始劑或鏈轉移劑而導入至聚合物鏈的末端的實施例。 The polar conversion group (y) is preferably one of the following: a group is, for example, included in a repeating unit derived from an acrylate or a methacrylate, and thus introduced into a side chain of the resin; and a group An example of introduction to the end of the polymer chain using a polymerization initiator or a chain transfer agent having a polar conversion group (y).

具有極性變換基(y)的重複單元(by)的具體實例包括具有由後述式(KA-1-1)至式(KA-1-17)所代表的內酯結構的重複單元。 Specific examples of the repeating unit (by) having a polar conversion group (y) include repeating units having a lactone structure represented by the following formula (KA-1-1) to formula (KA-1-17).

具有極性變換基(y)的重複單元(by)較佳為具有氟原子或矽原子的重複單元(亦即,對應於重複單元(b')、重複單元(b")的重複單元)。包含重複單元(by)的樹脂具有疏水性,但以降低顯影缺陷的觀點來看,特別較佳為此重複單元。 The repeating unit (by) having a polar shift group (y) is preferably a repeating unit having a fluorine atom or a ruthenium atom (that is, a repeating unit corresponding to the repeating unit (b'), the repeating unit (b"). The resin of the repeating unit (by) is hydrophobic, but it is particularly preferable to repeat the unit for the purpose of reducing development defects.

重複單元(by)例如包括由式(K0)所代表的重複單 元: The repeating unit (by) includes, for example, a repeating unit represented by the formula (K0):

在式中,Rk1代表氫原子、鹵素原子、羥基、烷基、環烷基、芳基、或者含極性變換基的基團。 In the formula, R k1 represents a hydrogen atom, a halogen atom, a hydroxyl group, an alkyl group, a cycloalkyl group, an aryl group, or a group containing a polar group.

Rk2代表烷基、環烷基、芳基、或者含極性變換基的基團。 R k2 represents an alkyl group, a cycloalkyl group, an aryl group, or a group having a polar translating group.

然而,Rk1及Rk2的至少一者代表含極性變換基的基團。 However, at least one of R k1 and R k2 represents a group containing a polar transrading group.

如上所述,極性變換基為能夠藉由鹼性顯影液的作用而分解以增加對鹼性顯影液之溶解度的基團。極性變換基較佳為由式(KA-1)或式(KB-1)所代表之部分結構中的基團X: As described above, the polar conversion group is a group which can be decomposed by the action of an alkaline developer to increase the solubility to the alkaline developer. The polar conversion group is preferably a group X in a partial structure represented by the formula (KA-1) or the formula (KB-1):

在式(KA-1)或式(KB-1)中,X代表羧酸酯基:-COO-、酸酐基:-C(O)OC(O)-、酸醯亞胺基:-NHCONH-、羧酸硫酯基:-COS-、碳酸酯基:-OC(O)O-、硫酸酯基:-OSO2O-、或者磺酸酯基:-SO2O-。 In formula (KA-1) or formula (KB-1), X represents a carboxylate group: -COO-, an acid anhydride group: -C(O)OC(O)-, a phosphonium imine group: -NHCONH- Carboxylic acid ester group: -COS-, carbonate group: -OC(O)O-, sulfate group: -OSO 2 O-, or sulfonate group: -SO 2 O-.

Y1及Y2各(可相同或不相同)代表拉電子基。 Y 1 and Y 2 each (may be the same or different) represent a pull electron group.

順帶一提,重複單元(by)具有能夠藉由包含具有由 式(KA-1)或式(KB-1)所代表的部分結構的基團而增加對鹼性顯影液之溶解度的較佳基團,但在如式(KA-1)所代表的部分結構或Y1及Y2為一價時之如式(KB-1)所代表的部分結構的的案例中,當部分結構不具有接合鍵時,具有部分結構的基團為具有藉由將部分結構中之任意氫原子去除至少一個而形成之一價或更高價之基團的基團。 Incidentally, the repeating unit (by) has a preferred group capable of increasing the solubility to an alkaline developer by including a group having a partial structure represented by the formula (KA-1) or the formula (KB-1). a group, but in the case of a partial structure represented by the formula (KA-1) or a partial structure represented by the formula (KB-1) when Y 1 and Y 2 are monovalent, when the partial structure does not have a joint In the case of a bond, a group having a partial structure is a group having a group which is monovalent or higher by removing at least one of any hydrogen atom in a part of the structure.

由式(KA-1)或式(KB-1)所代表的部分結構經由取代基而連接於疏水性樹脂的主鏈上的任意位置。 A partial structure represented by the formula (KA-1) or the formula (KB-1) is bonded to an arbitrary position on the main chain of the hydrophobic resin via a substituent.

由式(KA-1)所代表的部分結構是與作為X的基團一起形成環結構的結構。 The partial structure represented by the formula (KA-1) is a structure which forms a ring structure together with a group which is X.

在式(KA-1)中,X較佳為羧酸酯基(亦即,形成內酯環結構作為KA-1的案例)、酸酐基或碳酸酯基,更佳為羧酸酯基。 In the formula (KA-1), X is preferably a carboxylate group (that is, a case where a lactone ring structure is formed as KA-1), an acid anhydride group or a carbonate group, and more preferably a carboxylate group.

由式(KA-1)所代表的環結構可具有取代基,並例如可具有nka個取代基Zka1The ring structure represented by the formula (KA-1) may have a substituent and may have, for example, nka substituents Z ka1 .

當多個Zka1存在時,Zka1代表(各自獨立代表)鹵素原子、烷基、環烷基、醚基、羥基、醯胺基、芳基、內酯環基或拉電子基。 When a plurality of Z ka1 are present, Z ka1 represents (each independently represents) a halogen atom, an alkyl group, a cycloalkyl group, an ether group, a hydroxyl group, a decylamino group, an aryl group, a lactone ring group or a pendant electron group.

多個Zka1可彼此結合以形成環。藉由Zka1彼此結合可形成的環的實例包括環烷基環及雜環(例如環狀醚環、內酯環)。 A plurality of Z ka1 may be combined with each other to form a ring. Examples of the ring which can be formed by bonding Z ka1 to each other include a cycloalkyl ring and a hetero ring (for example, a cyclic ether ring, a lactone ring).

nka代表0至10的整數且較佳為0至8的整數,更佳為0至5的整數,再更佳為1至4的整數,且最佳為1至3的整數。 Nka represents an integer of 0 to 10 and is preferably an integer of 0 to 8, more preferably an integer of 0 to 5, still more preferably an integer of 1 to 4, and most preferably an integer of 1 to 3.

作為Zka1的拉電子基具有與後述作為Y1及Y2的拉電子基的相同意義。以上拉電子基可經另一拉電子基取代。 The electron withdrawing group of Z ka1 has the same meaning as the electron withdrawing group of Y 1 and Y 2 described later. The above electron withdrawing group may be substituted by another electron withdrawing group.

Zka1較佳為烷基、環烷基、醚基、羥基或拉電子基,更佳為烷基、環烷基或拉電子基。醚基較佳為經例如烷基或環烷基所取代的基團,亦即烷基醚基。拉電子基具有與上述相同的意義。 Z ka1 is preferably an alkyl group, a cycloalkyl group, an ether group, a hydroxyl group or an electron-withdrawing group, more preferably an alkyl group, a cycloalkyl group or an electron-withdrawing group. The ether group is preferably a group substituted with, for example, an alkyl group or a cycloalkyl group, that is, an alkyl ether group. The pull electron group has the same meaning as described above.

作為Zka1的鹵素原子的實例包括氟原子、氯原子、溴原子及碘原子,以氟原子為較佳。 Examples of the halogen atom of Z ka1 include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, and a fluorine atom is preferred.

作為Zka1的烷基可具有取代基且可為直鏈型或分支型中的任意者。直鏈型烷基之碳數較佳為1至30,更佳為1至20,且其實例包括:甲基、乙基、正丙基、正丁基、第二丁基、第三丁基、正戊基、正己基、正庚基、正辛基、正壬基及正癸基。分支型烷基之碳數較佳為3至30,更佳為3至20,且其實例包括:異丙基、異丁基、第三丁基、異戊基、第三戊基、異己基、第三己基、異庚基、第三庚基、異辛基、第三辛基、異壬基及第三癸基。烷基較佳之碳數為1至4,其諸如甲基、乙基、正丙基、異丙基、正丁基、異丁基及第三丁基。 The alkyl group as Z ka1 may have a substituent and may be any of a linear type or a branched type. The linear alkyl group preferably has 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, and examples thereof include methyl group, ethyl group, n-propyl group, n-butyl group, second butyl group and t-butyl group. , n-pentyl, n-hexyl, n-heptyl, n-octyl, n-decyl and n-decyl. The branched alkyl group preferably has a carbon number of from 3 to 30, more preferably from 3 to 20, and examples thereof include: isopropyl, isobutyl, tert-butyl, isopentyl, third pentyl, isohexyl And a third hexyl group, an isoheptyl group, a third heptyl group, an isooctyl group, a third octyl group, an isodecyl group and a third fluorenyl group. The alkyl group preferably has a carbon number of from 1 to 4, such as methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl and tert-butyl.

作為Zka1的環烷基可具有取代基且可為單環或為多環。而在多環的案例中,環烷基可為交聯式。亦即,在此案例中,環烷基可具有橋式(bridged)結構。 The cycloalkyl group as Z ka1 may have a substituent and may be a single ring or a polycyclic ring. In the case of multiple rings, the cycloalkyl group can be crosslinked. That is, in this case, the cycloalkyl group may have a bridged structure.

單環環烷基較佳為碳數為3至8的環烷基,且其實例包括:環丙基、環戊基、環己基、環丁基及環辛基。 The monocyclic cycloalkyl group is preferably a cycloalkyl group having a carbon number of 3 to 8, and examples thereof include a cyclopropyl group, a cyclopentyl group, a cyclohexyl group, a cyclobutyl group, and a cyclooctyl group.

多環環烷基的實例包括具有二環、三環或四環結構且 其碳數為5或5以上的基團。較佳為碳數為6至20的環烷基,且其實例包括:金剛烷基、降莰基、異冰片基(isobornyl)、莰基(camphanyl)、二環戊基、α-蒎烯基(α-pinenyl)、三環癸基、四環十二烷基及雄甾烷基(androstanyl)。 Examples of the polycyclic cycloalkyl group include a bicyclic, tricyclic or tetracyclic structure and A group having a carbon number of 5 or more. Preferred is a cycloalkyl group having a carbon number of 6 to 20, and examples thereof include: adamantyl group, norbornyl group, isobornyl group, camphanyl group, dicyclopentyl group, α-decenyl group (α-pinenyl), tricyclodecyl, tetracyclododecyl and androstanyl.

下例結構亦較佳作為環烷基。順帶一提,環烷基中的至少一個碳原子可置換為諸如氧原子的雜原子。 The structure of the following example is also preferred as a cycloalkyl group. Incidentally, at least one carbon atom in the cycloalkyl group may be substituted with a hetero atom such as an oxygen atom.

脂環部分較佳為金剛烷基、降金剛烷基、十氫萘基、 三環癸基、四環十二烷基、降莰基、雪松醇基(cedrol group)、環己基、環庚基、環辛基、環癸基或環十二烷基,更佳為金剛烷基、十氫萘基、降莰基、雪松醇基、環己基、環庚基、環辛基、環癸基、環十二烷基或三環癸基。 The alicyclic moiety is preferably adamantyl, noradamantyl, decahydronaphthyl, Tricyclic fluorenyl, tetracyclododecyl, norbornyl, cedrol group, cyclohexyl, cycloheptyl, cyclooctyl, cyclodecyl or cyclododecyl, more preferably adamantane Base, decahydronaphthyl, norbornyl, cedar, cyclohexyl, cycloheptyl, cyclooctyl, cyclodecyl, cyclododecyl or tricyclodecyl.

脂環結構的取代基包括:烷基、鹵素原子、羥基、烷氧基、羧基及烷氧基羰基。烷基較佳為諸如甲基、乙基、丙基、異丙基及丁基之碳數較少的烷基,更佳為甲基、乙基、丙基或異丙基。烷氧基較佳為碳數為1至4的烷氧基,其諸如甲氧基、乙氧基、丙氧基及丁氧基。烷基及烷氧基可具有之取代基的實例包括羥基、鹵素原子及烷氧基(碳數較佳為1至4)。 The substituent of the alicyclic structure includes an alkyl group, a halogen atom, a hydroxyl group, an alkoxy group, a carboxyl group, and an alkoxycarbonyl group. The alkyl group is preferably an alkyl group having a smaller carbon number such as a methyl group, an ethyl group, a propyl group, an isopropyl group and a butyl group, more preferably a methyl group, an ethyl group, a propyl group or an isopropyl group. The alkoxy group is preferably an alkoxy group having a carbon number of 1 to 4, such as a methoxy group, an ethoxy group, a propoxy group, and a butoxy group. Examples of the substituent which the alkyl group and the alkoxy group may have include a hydroxyl group, a halogen atom, and an alkoxy group (the number of carbon atoms is preferably from 1 to 4).

以上基團可更具有取代基,且取代基更包括:羥基;鹵素原子(例如氟、氯、溴、碘);硝基;氰基;上述烷基;諸如甲氧基、乙氧基、羥基乙氧基、丙氧基、羥基丙氧基、正丁氧基、異丁氧基、第二丁氧基及第三丁氧基之烷氧基;諸如甲氧基羰基及乙氧基羰基之烷氧基羰基;諸如苄基、苯乙基及異丙苯基之芳烷基;芳烷氧基;諸如甲醯基、乙醯基、丁醯基、苯甲醯基、桂皮醯基(cianamyl group)及戊醯基之醯基;諸如丁醯氧基之醯氧基;諸如乙烯基、丙烯基及烯丙基之烯基;諸如乙烯氧基、丙烯氧基、烯丙氧基及丁烯氧基之烯氧基;諸如苯基及萘基之芳基;諸如苯氧基之芳氧基;以及諸如苯甲醯氧基之芳氧基羰基。 The above group may have a more substituent, and the substituent further includes: a hydroxyl group; a halogen atom (e.g., fluorine, chlorine, bromine, iodine); a nitro group; a cyano group; the above alkyl group; such as a methoxy group, an ethoxy group, a hydroxyl group Alkoxy groups of ethoxy, propoxy, hydroxypropoxy, n-butoxy, isobutoxy, second butoxy and tert-butoxy; such as methoxycarbonyl and ethoxycarbonyl Alkoxycarbonyl; aralkyl such as benzyl, phenethyl and cumene; aralkyloxy; such as formazan, ethyl hydrazino, butyl fluorenyl, benzhydryl, cianamyl group And a fluorenyl group of a pentyl group; a decyloxy group such as a butenyloxy group; an alkenyl group such as a vinyl group, a propenyl group and an allyl group; such as a vinyloxy group, a propyleneoxy group, an allyloxy group and a butenyloxy group Alkenyloxy; aryl such as phenyl and naphthyl; aryloxy such as phenoxy; and aryloxycarbonyl such as benzhydryloxy.

較佳為式(KA-1)中的X為羧酸酯基,而由式(KA-1)所代表的部分結構為內酯環,且內脂環較佳為5員至7員 環內酯環。 Preferably, X in the formula (KA-1) is a carboxylate group, and a partial structure represented by the formula (KA-1) is a lactone ring, and the lactone ring is preferably from 5 to 7 members. a cyclic lactone ring.

在這方面,如以下(KA-1-1)至(KA-1-17)中所示,另一環結構較佳為與由式(KA-1)所代表的部分結構之5員至7員環內酯以形成二環結構或螺環結構的形式融合。 In this regard, as shown in the following (KA-1-1) to (KA-1-17), the other ring structure is preferably 5 to 7 members of the partial structure represented by the formula (KA-1) The cyclic lactone is fused in the form of a bicyclic structure or a spiro ring structure.

可與由式(KA-1)所代表之環結構結合的周邊環結構的實例包括以下(KA-1-1)至(KA-1-17)中所示者及以基於這些結構而衍生的結構。 Examples of the peripheral ring structure which can be bonded to the ring structure represented by the formula (KA-1) include those shown in the following (KA-1-1) to (KA-1-17) and derived based on these structures. structure.

包含由式(KA-1)所代表之內酯環結構的結構更佳為下例(KA-1-1)至(KA-1-17)之任意一者所代表的結構。內酯結構可直接鍵結於主鏈上。較佳的結構為(KA-1-1)、(KA-1-4)、(KA-1-5)、(KA-1-6)、(KA-1-13)、(KA-1-14)及(KA-1-17)。 The structure including the lactone ring structure represented by the formula (KA-1) is more preferably a structure represented by any one of the following examples (KA-1-1) to (KA-1-17). The lactone structure can be directly bonded to the backbone. Preferred structures are (KA-1-1), (KA-1-4), (KA-1-5), (KA-1-6), (KA-1-13), (KA-1- 14) and (KA-1-17).

包含上述內酯環結構的結構可具有或可不具有取代基。取代基的較佳實例相同於由式(KA-1)所代表的環結構可具有的取代基Zka1The structure containing the above lactone ring structure may or may not have a substituent. Preferred examples of the substituent are the same as the substituent Z ka1 which the ring structure represented by the formula (KA-1) may have.

在式(KB-1)中,X較佳為羧酸酯基(-COO-)。 In the formula (KB-1), X is preferably a carboxylate group (-COO-).

在式(KB-1)中,Y1及Y2各獨立代表拉電子基。 In the formula (KB-1), Y 1 and Y 2 each independently represent a pull electron group.

拉電子基為由下式(EW)所代表的部分結構。在式(EW)中,*表示直接鍵結於(KA-1)的接合鍵或直接接合於(KB-1)中的X的接合鍵。 The electron withdrawing group is a partial structure represented by the following formula (EW). In the formula (EW), * represents a bonding bond directly bonded to (KA-1) or a bonding bond directly bonded to X in (KB-1).

在式(EW)中,Rew1及Rew2各獨立代表任意取代基,例如代表氫原子、烷基、環烷基或芳基。 In the formula (EW), R ew1 and R ew2 each independently represent an arbitrary substituent, for example, a hydrogen atom, an alkyl group, a cycloalkyl group or an aryl group.

new為由-C(Rew1)(Rew2)-所代表之連結基的重複數且代表0或1的整數。在new為0的案例中,其表示接合鍵為單鍵且Yew1為直接結合。 n ew is an integer of a repeating group represented by -C(R ew1 )(R ew2 )- and represents an integer of 0 or 1. In the case where n ew is 0, it means that the bonding key is a single bond and Y ew1 is a direct bond.

Yew1為鹵素原子、氰基、腈基、硝基、由後述之-C(Rf1)(Rf2)-Rf3所代表的鹵代(環)烷基或鹵代芳基、氧基、羰基、磺醯基、亞磺醯基、或上述基團的組合。拉電子基可為例如以下之結構。詞彙「鹵代(環)烷基」表示至少部分經鹵化的烷基或環烷基,而「鹵代芳基」表示至少部分經鹵化的芳基。在以下結構式中,Rew3及Rew4各獨立代表任意的結構。無論Rew3或Rew4為哪一種結構,由式(EW)所代表的部分結構均具有拉電子基。且Rew3及Rew4例如可各連接於樹脂之主鏈上,但較佳為烷基、環烷基或氟化烷基。 Y ew1 is a halogen atom, a cyano group, a nitrile group, a nitro group, a halogenated (cyclo)alkyl group represented by a -C(R f1 )(R f2 )-R f3 described later, or a halogenated aryl group, an oxy group, A carbonyl group, a sulfonyl group, a sulfinyl group, or a combination of the above groups. The electron withdrawing group can be, for example, the following structure. The term "halo(cyclo)alkyl" denotes an at least partially halogenated alkyl or cycloalkyl group, and "haloaryl" means an at least partially halogenated aryl group. In the following structural formula, R ew3 and R ew4 each independently represent an arbitrary structure. Regardless of the structure of R ew3 or R ew4 , the partial structures represented by the formula (EW) have a pull electron group. Further, R ew3 and R ew4 may each be bonded to the main chain of the resin, for example, preferably an alkyl group, a cycloalkyl group or a fluorinated alkyl group.

在Yew1為二價或更高價之基團的案例中,剩餘的結合鍵形成與任意原子或取代基的鍵結。Yew1、Rew1及Rew2的至少任意一個基團可經由進一步的取代基而連結於疏水性樹脂的主鏈上。 In the case where Y ew1 is a divalent or higher group, the remaining bond forms a bond to any atom or substituent. At least one of Y ew1 , R ew1 and R ew2 may be bonded to the main chain of the hydrophobic resin via a further substituent.

Yew1較佳為鹵素原子或由-C(Rf1)(Rf2)-Rf3所代表的鹵代(環)烷基或鹵代芳基。 Y ew1 is preferably a halogen atom or a halogenated (cyclo)alkyl group or a halogenated aryl group represented by -C(R f1 )(R f2 )-R f3 .

至少兩個由Rew1、Rew2及Yew1中選出的成員可彼此結合以形成環。 At least two members selected from R ew1 , R ew2 , and Y ew1 may be combined with each other to form a ring.

Rf1代表鹵素原子、全鹵代烷基、全鹵代環烷基或全鹵代芳基,且較佳為氟原子、全氟烷基或全氟環烷基,更佳為為氟原子或三氟甲基。 R f1 represents a halogen atom, a perhaloalkyl group, a perhalogenated cycloalkyl group or a perhalogenated aryl group, and is preferably a fluorine atom, a perfluoroalkyl group or a perfluorocycloalkyl group, more preferably a fluorine atom or a trifluoro group. methyl.

Rf2、Rf3各獨立代表氫原子、鹵素原子或者有機基,且Rf2與Rf3可連結形成環。有機基的實例包括烷基、環烷基及烷氧基。Rf2較佳為與Rf1相同的基團或與Rf3結合以形成環。 R f2 and R f3 each independently represent a hydrogen atom, a halogen atom or an organic group, and R f2 and R f3 may be bonded to form a ring. Examples of the organic group include an alkyl group, a cycloalkyl group, and an alkoxy group. R f2 is preferably the same group as R f1 or combined with R f3 to form a ring.

Rf1至Rf3可結合以形成環,所形成的環的實例包括(鹵 代)環烷基環及(鹵代)芳基環。 R f1 to R f3 may be bonded to form a ring, and examples of the ring formed include a (halogenated) cycloalkyl ring and a (halogenated) aryl ring.

Rf1至Rf3中的(鹵代)烷基的實例包括上述Zka1中的烷基及其經鹵化的結構。 Examples of the (halogenated)alkyl group in R f1 to R f3 include the above alkyl group in Z ka1 and a halogenated structure thereof.

Rf1至Rf3中或Rf2與Rf3結合所形成的環中的(全)鹵代環烷基及(全)鹵代芳基的實例包括上述Zka1中的環烷基經鹵化的結構,較佳為由-C(n)F(2n-2)H所代表的氟環烷基、以及由-C(n)F(n-1)所代表的全氟芳基,其中碳數n不受特別的限制,但其較佳為5至13,更佳為6。 Examples of the ( per )halocycloalkyl group and the ( per )haloaryl group in the ring formed by the combination of R f1 to R f3 or R f2 and R f3 include the halogenated structure of the cycloalkyl group in the above Z ka1 Preferred is a fluorocycloalkyl group represented by -C (n) F (2n-2) H and a perfluoroaryl group represented by -C (n) F (n-1) , wherein the carbon number n It is not particularly limited, but it is preferably 5 to 13, more preferably 6.

藉由Rew1、Rew2及Yew1的至少兩個成員彼此結合可形成的環較佳為環烷基或雜環基,且雜環基較佳為內酯環基。內酯環的實例包括由式(KA-1-1)至式(KA-1-17)所代表的結構。 The ring which can be formed by bonding at least two members of R ew1 , R ew2 and Y ew1 to each other is preferably a cycloalkyl group or a heterocyclic group, and the heterocyclic group is preferably a lactone ring group. Examples of the lactone ring include a structure represented by the formula (KA-1-1) to the formula (KA-1-17).

順帶一提,重複單元(by)可具有多個由式(KA-1)所代表的部分結構、多個由式(KB-1)所代表的部分結構、或者由式(KA-1)所代表的部分結構及由式(KB-1)所代表的部分結構兩者。 Incidentally, the repeating unit (by) may have a plurality of partial structures represented by the formula (KA-1), a plurality of partial structures represented by the formula (KB-1), or a formula (KA-1). The partial structure represented and the partial structure represented by the formula (KB-1).

在這方面,式(KA-1)的部分結構可部分或全部地兼作為式(KB-1)中之Y1或Y2的拉電子基。舉例而言,在式(KA-1)的X為羧酸酯基的案例中,羧酸酯基亦可作為式(KB-1)中之Y1或Y2的拉電子基而發揮功能。 In this regard, the partial structure of the formula (KA-1) may partially or wholly also serve as the electron withdrawing group of Y 1 or Y 2 in the formula (KB-1). For example, in the case where X of the formula (KA-1) is a carboxylate group, the carboxylate group can also function as a pull electron group of Y 1 or Y 2 in the formula (KB-1).

又,在重複單元(by)符合重複單元(b*)或重複單元(b")且具有由式(KA-1)所代表之部分結構的案例中,由式(KA-1)所代表的部分結構更佳為極性變換基為由式(KA-1)所代表之結構中的-COO-的部分結構。 Further, in the case where the repeating unit (by) conforms to the repeating unit (b*) or the repeating unit (b") and has a partial structure represented by the formula (KA-1), represented by the formula (KA-1) The partial structure is more preferably a partial structure in which the polar conversion group is -COO- in the structure represented by the formula (KA-1).

重複單元(by)可為具有由式(KY-0)所代表之部分結構的重複單元: The repeating unit (by) may be a repeating unit having a partial structure represented by the formula (KY-0):

在式(KY-0)中,R2代表鏈狀或者環狀伸烷基,且當多個R2存在時,這些R2可相同或不相同。 In the formula (KY-0), R 2 represents a chain or cyclic alkyl group, and when a plurality of R 2 are present, these R 2 may be the same or different.

R3代表碳成份上的氫原子之部分或全部置換為氟原子的直鏈型、分支型或環狀烴基。 R 3 represents a linear, branched or cyclic hydrocarbon group in which a part or the whole of a hydrogen atom on the carbon component is substituted with a fluorine atom.

R4代表鹵素原子、氰基、羥基、醯胺基、烷基、環烷基、烷氧基、苯基、醯基、烷氧基羰基、或者R-C(=O)-或R-C(=O)O-所代表的基團(其中R代表烷基或環烷基)。當多個R4存在時,這些R4可相同或不相同,且兩個或兩個以上的R4可結合以形成環。 R 4 represents a halogen atom, a cyano group, a hydroxyl group, a decylamino group, an alkyl group, a cycloalkyl group, an alkoxy group, a phenyl group, a decyl group, an alkoxycarbonyl group, or RC(=O)- or RC(=O) a group represented by O- (wherein R represents an alkyl group or a cycloalkyl group). When a plurality of R 4 are present, these R 4 may be the same or different, and two or more R 4 may be combined to form a ring.

X代表伸烷基、氧原子或硫原子。 X represents an alkyl group, an oxygen atom or a sulfur atom.

Z及Za各代表單鍵、醚鍵、酯鍵、醯胺鍵、胺基甲酸酯鍵或脲鍵,且當多個Z或Za存在時,各Z或Za可相同於或不相同於各個其他的Z或Za。 Z and Za each represent a single bond, an ether bond, an ester bond, a guanamine bond, a urethane bond or a urea bond, and when a plurality of Z or Za are present, each Z or Za may be the same or different from each Other Z or Za.

*代表在樹脂的主鏈或者側鏈上的接合鍵。 * represents a bonding bond on the main chain or side chain of the resin.

o為取代基數,且代表1至7的整數。 o is a substituent number and represents an integer from 1 to 7.

m為取代基數,且代表0至7的整數。 m is the number of substituents and represents an integer from 0 to 7.

n代表重複數,且代表0至5的整數。 n represents a repeating number and represents an integer from 0 to 5.

-R2-Z-的結構較佳為由-(CH2)l-COO-所代表的結構(其中l代表1至5的整數)。 The structure of -R 2 -Z- is preferably a structure represented by -(CH 2 ) l -COO- (wherein represents an integer of 1 to 5).

作為R2的鏈狀或者環狀伸烷基的較佳碳數範圍及具體實例相同於針對上述式(bb)的Z2中的鏈狀伸烷基及環狀伸烷基所描述者。 The preferred carbon number range and specific examples of the chain or cyclic alkyl group as R 2 are the same as those described for the chain alkyl group and the cyclic alkyl group in Z 2 of the above formula (bb).

作為R3的直鏈型、分支型或者環狀烴基的碳數在直鏈型烴基的案例中,較佳為1至30,更佳為1至20;在分支型烴基的案例中,較佳為3至30,更佳為3至20;以及在環狀烴基的案例中為6至20。R3的具體實例包括作為以上Zka1的烷基及環烷基的具體實例。 The carbon number of the linear, branched or cyclic hydrocarbon group as R 3 is preferably from 1 to 30, more preferably from 1 to 20, in the case of the linear hydrocarbon group; in the case of the branched hydrocarbon group, it is preferably It is 3 to 30, more preferably 3 to 20; and in the case of a cyclic hydrocarbon group, 6 to 20. Specific examples of R 3 include specific examples of the alkyl group and the cycloalkyl group as the above Z ka1 .

作為R4及R的烷基及環烷基的較佳碳數及具體實例相同針對上述Zka1的烷基及環烷基所描述者。 Preferred carbon numbers and specific examples of the alkyl group and the cycloalkyl group of R 4 and R are the same as those described above for the alkyl group and the cycloalkyl group of Z ka1 .

作為R4的醯基較佳為碳數為1至6的醯基,且其實例包括:甲醯基、乙醯基、丙醯基、丁醯基、異丁醯基、戊醯基及特戊醯基。 The fluorenyl group as R 4 is preferably a fluorenyl group having a carbon number of 1 to 6, and examples thereof include a fluorenyl group, an ethyl fluorenyl group, a propyl fluorenyl group, a butyl fluorenyl group, an isobutyl fluorenyl group, a amyl group, and a pentamidine group.

作為R4的烷氧基及烷氧基羰基中的烷基部分包括直鏈型、分支型或環狀的烷基部分,且烷基部分的較佳碳數及具體實例相同於針對上述Zka1的烷基及環烷基所描述者。 The alkyl moiety in the alkoxy group and the alkoxycarbonyl group of R 4 includes a linear, branched or cyclic alkyl moiety, and a preferred carbon number of the alkyl moiety and specific examples are the same for the above Z ka1 The alkyl and cycloalkyl groups are described.

作為X的伸烷基包括鏈狀或環狀伸烷基,且其較佳的碳數及具體實例相同於針對R2的鏈狀伸烷基及環狀伸烷基所描述者。 The alkylene group as X includes a chain or cyclic alkyl group, and its preferred carbon number and specific examples are the same as those described for the chain alkyl group and the cyclic alkyl group for R 2 .

作為用於重複單元(by)的具體結構,重複單元亦包括具有以下所示的部分結構的重複單元。 As a specific structure for the repeating unit (by), the repeating unit also includes a repeating unit having a partial structure shown below.

在式(rf-1)及式(rf-2)中,X'代表拉電子取代基,且較佳為羰氧基、氧羰基、經氟原子取代的伸烷基或經氟原子取代的伸環烷基。 In the formula (rf-1) and the formula (rf-2), X' represents a pull-electron substituent, and preferably a carbonyloxy group, an oxycarbonyl group, an alkyl group substituted by a fluorine atom or a fluorine atom-substituted extension. Cycloalkyl.

A代表單鍵或由-C(Rx)(Ry)-所代表的二價連結基,其中,Rx、Ry各獨立代表氫原子、氟原子、烷基(較佳碳數為1至6,可經氟原子或相似物取代)、或者環烷基(較佳碳數為5至12,可經氟原子或相似物取代)。Rx及Ry各較佳為氫原子、烷基或經氟原子取代的烷基。 A represents a single bond or a divalent linking group represented by -C(Rx)(Ry)-, wherein Rx and Ry each independently represent a hydrogen atom, a fluorine atom, or an alkyl group (preferably having a carbon number of 1 to 6, Substituted by a fluorine atom or the like, or a cycloalkyl group (preferably having a carbon number of 5 to 12, which may be substituted by a fluorine atom or the like). Rx and Ry are each preferably a hydrogen atom, an alkyl group or an alkyl group substituted with a fluorine atom.

X代表拉電子基且其具體實例包括作為以上Y1及Y2的拉電子基。在這些實例中,較佳為氟化烷基、氟化環烷基、經氟或氟化烷基取代的芳基、經氟或氟化烷基取代的芳烷基、氰基及硝基。 X represents a pull electron group and specific examples thereof include a pull electron group as the above Y 1 and Y 2 . In these examples, preferred are fluorinated alkyl groups, fluorinated cycloalkyl groups, aryl groups substituted by fluorine or fluorinated alkyl groups, aralkyl groups substituted with fluorine or fluorinated alkyl groups, cyano groups and nitro groups.

*代表在樹脂的主鏈或側鏈上的接合鍵。亦即,代表經由單鍵或連結基而鍵結於樹脂主鏈上的結合鍵。 * represents a bonding bond on the main chain or side chain of the resin. That is, it represents a bond which is bonded to the resin main chain via a single bond or a linking group.

順帶一提,當X'為羰氧基或氧羰基時,A不為單鍵。 Incidentally, when X' is a carbonyloxy group or an oxycarbonyl group, A is not a single bond.

極性變換基藉由鹼性顯影液的作用分解而產生極性變換,據此可以降低鹼性顯影後的抗蝕劑膜與水的後退接觸角(receding contact angle)。以對於抑制顯影缺陷的觀點而言,鹼性顯影後膜與水的後退接觸角下降為較佳。 The polarity conversion group is decomposed by the action of the alkaline developing solution to generate a polarity change, whereby the receding contact angle of the resist film and the water after the alkali development can be reduced. From the viewpoint of suppressing development defects, it is preferred that the receding contact angle of the film and water after alkali development is lowered.

在溫度23±3℃、濕度45±5%時,鹼性顯影後的抗蝕劑膜與水的後退接觸角較佳為50°或50°以下,更佳為40°或 40°以下,再更佳為35°或35°以下,且最佳為30°或30°以下。 When the temperature is 23±3° C. and the humidity is 45±5%, the receding contact angle of the resist film after alkali development with water is preferably 50° or less, more preferably 40° or 40° or less, more preferably 35° or less, and most preferably 30° or less.

後退接觸角是指在液滴-基板界面的接觸線後退時進行量測的接觸角,且眾所皆知這對模擬動態狀態下液滴的移動性是有用的。簡便起見,可以將後退接觸角定義為使從針前端噴出的液滴滴到基板上後,將該液滴再次吸入針中時液滴的界面後退時的接觸角。一般來說,可以藉由通常稱為擴張/收縮法的接觸角的量測方法來量測後退接觸角。 The receding contact angle refers to the contact angle measured when the contact line of the droplet-substrate interface retreats, and it is well known that this is useful for simulating the mobility of droplets in a dynamic state. For the sake of simplicity, the receding contact angle can be defined as the contact angle when the droplets ejected from the tip end of the needle are dropped onto the substrate, and the droplets are retracted into the needle when the interface of the droplet retreats. In general, the receding contact angle can be measured by a measurement method of a contact angle generally called an expansion/contraction method.

疏水性樹脂對於鹼性顯影液的水解速率較佳為0.001奈米/秒或更快,更佳為0.01奈米/秒或更快,再更佳為0.1奈米/秒或更快,且最佳為1奈米/秒或更快。 The hydrolysis rate of the hydrophobic resin to the alkaline developer is preferably 0.001 nm/sec or faster, more preferably 0.01 nm/sec or faster, still more preferably 0.1 nm/sec or faster, and most Good for 1 nm / sec or faster.

疏水性樹脂對於鹼性顯影液的水解速率是以23℃的TMAH(四甲基氫氧化銨水溶液)(2.38質量%)進行處理時,僅以疏水性樹脂來製成樹脂膜時的膜厚減少速率。 When the rate of hydrolysis of the alkaline developer in the hydrophobic developer is treated with TMAH (tetramethylammonium hydroxide aqueous solution) (2.38 mass%) at 23 ° C, the film thickness is reduced when the resin film is formed only from the hydrophobic resin. rate.

重複單元(by)更佳為具有至少兩個或兩個以上極性變換基的重複單元。 The repeating unit (by) is more preferably a repeating unit having at least two or more polar transforming groups.

在重複單元(by)具有至少兩個極性變換基的案例中,重複單元較佳包含由下式(KY-1)所代表之具有兩個極性變換基的部分結構的基團。順帶一提,當由式(KY-1)所代表的結構不具有接合鍵時,其為包含藉由將結構中的任意氫原子去除至少一個的一價或更高價之基團的基團。 In the case where the repeating unit (by) has at least two polar transforming groups, the repeating unit preferably contains a group having a partial structure of two polar converting groups represented by the following formula (KY-1). Incidentally, when the structure represented by the formula (KY-1) does not have a bonding bond, it is a group containing a monovalent or higher valence group by removing at least one of any hydrogen atom in the structure.

在式(KY-1)中,Rky1、Rky4各獨立代表氫原子、鹵素原子、烷基、環烷基、羰基、羰氧基、氧羰基、醚基、羥基、氰基、醯胺基或芳基。另外,Rky1及Rky4可與相同原子鍵結以形成雙鍵。舉例來說,Rky1及Rky4可與相同氧原子鍵結而形成羰基的一部分(=O)。 In formula (KY-1) in a, R ky1, R ky4 each independently represent a hydrogen atom, a halogen atom, an alkyl group, a cycloalkyl group, a carbonyl group, a carbonyl group, an oxycarbonyl group, an ether group, a hydroxyl group, a cyano group, acyl group Or aryl. Further, R ky1 and R ky4 may be bonded to the same atom to form a double bond. For example, R ky1 and R ky4 may form part of a carbonyl group (= O) bonded to the same oxygen atom.

Rky2及Rky3各獨立代表拉電子基,或者當Rky1與Rky2鍵結形成內酯環時,Rky3為拉電子基。所形成的內酯環較佳為(KA-1-1)至(KA-1-17)的結構。拉電子基的實例相同於式(KB-1)中之Y1、Y2,且較佳為鹵素原子、以及上述由-C(Rf1)(Rf2)-Rf3所代表的鹵代(環)烷基或鹵代芳基。較佳地說,Rky3為鹵素原子或由-C(Rf1)(Rf2)-Rf3所代表的鹵代(環)烷基或者鹵代芳基,且Rky2是與Rky1連結形成內酯環,或者不包含鹵素原子的拉電子基。 R ky2 and R ky3 each independently represent an electron withdrawing group, or when R ky1 and R ky2 bonded form a lactone ring, R ky3 is an electron withdrawing group. The lactone ring formed is preferably a structure of (KA-1-1) to (KA-1-17). Examples of the electron withdrawing group are the same as Y 1 and Y 2 in the formula (KB-1), and are preferably a halogen atom, and the above halogen represented by -C(R f1 )(R f2 )-R f3 ( Cyclo)alkyl or haloaryl. Preferably, say, R ky3 is a halogen atom or a halo (cyclo) a -C (R f1) (R f2 ) -R f3 represents an alkyl group or a halogenated aryl group, and R ky2 coupling is formed with R ky1 a lactone ring or a pull electron group that does not contain a halogen atom.

Rky1、Rky2及Rky4可彼此結合以形成單環或多環結構。 R ky1, R ky2, and R ky4 may be bonded to each other to form a monocyclic or polycyclic structure.

Rky1及Rky4的具體實例包括與式(KA-1)中之Zka1相同的基團。 Specific examples of R ky1 and R ky4 include the formula (KA-1) in the same ka1 Z group.

Rky1與Rky2連結形成的內酯環較佳為(KA-1-1)至(KA-1-17)的結構。拉電子基的實例相同於式(KB-1)中之Y1、Y2Preferred R ky1 lactone ring and R ky2 formed is connected to (KA-1-1) to (KA-1-17) structure. Examples of the electron withdrawing group are the same as Y 1 and Y 2 in the formula (KB-1).

由式(KY-1)所代表的結構較佳為由下式(KY-2)所代表的結構。在此,由式(KY-2)所代表的結構是具有將 結構中的任意氫原子去除至少一個的一價或更高價之基團的基團。 The structure represented by the formula (KY-1) is preferably a structure represented by the following formula (KY-2). Here, the structure represented by the formula (KY-2) has Any hydrogen atom in the structure removes at least one group of a monovalent or higher valent group.

在式(KY-2)中,Rky6至Rky10各獨立地表氫原子、鹵素原子、烷基、環烷基、羰基、羰氧基、氧羰基、醚基、羥基、氰基、醯胺基或芳基。 In the formula (KY-2), R ky6 to R ky10 each independently represent a hydrogen atom, a halogen atom, an alkyl group, a cycloalkyl group, a carbonyl group, a carbonyloxy group, an oxycarbonyl group, an ether group, a hydroxyl group, a cyano group or a decylamino group. Or aryl.

Rky6至Rky10之兩個或兩個以上的成員可彼此連結以形成單環或多環結構。 Two or more members of R ky6 to R ky10 may be bonded to each other to form a monocyclic or polycyclic structure.

Rky5代表拉電子基。拉電子基相同於針對Y1、Y2所描述者,且較佳為鹵素原子及由-C(Rf1)(Rf2)-Rf3所代表的鹵代(環)烷基或鹵代芳基。 R ky5 represents the electron-based base. The electron withdrawing group is the same as those described for Y 1 and Y 2 , and is preferably a halogen atom and a halogenated (cyclo)alkyl group or a halogenated aromatic group represented by -C(R f1 )(R f2 )-R f3 . base.

Rky5至Rky10的具體實例包括與式(KA-1)中之Zka1相同的基團。 Specific examples of R ky5 to R ky10 include the same groups as Z ka1 in the formula (KA-1).

由式(KY-2)所代表的結構較佳為由下式(KY-3)所代表的部分結構: The structure represented by the formula (KY-2) is preferably a partial structure represented by the following formula (KY-3):

在式(KY-3)中,Zka1及nka與在式(KA-1)中時的意義相同。Rky5與在式(KY-2)中時的意義相同。 In the formula (KY-3), Z ka1 and nka have the same meanings as in the formula (KA-1). R ky5 has the same meaning as in the formula (KY-2).

Lky代表伸烷基、氧原子或硫原子。Lky的伸烷基的實例包括亞甲基及伸乙基。Lky較佳為氧原子或亞甲基,更佳為亞甲基。 L ky represents an alkyl group, an oxygen atom or a sulfur atom. Examples of the alkylene group of L ky include a methylene group and an ethyl group. L ky is preferably an oxygen atom or a methylene group, more preferably a methylene group.

重複單元(b)不受限制,只要其是藉由諸如加成聚合、縮合聚合及加成縮合之聚合所獲得的重複單元即可,但重複單元較佳為藉由碳-碳雙鍵之加成聚合所獲得的重複單元。且其實例包括:丙烯酸酯系重複單元(包括在α位、β位具有取代基的系統)、苯乙烯系重複單元(包括在α位、β位具有取代基的系統)、乙烯醚系重複單元、降莰烯系重複單元、以及順丁烯二酸衍生物(諸如順丁烯二酸酐、其衍生物、以及順丁烯二醯亞胺)的重複單元。較佳為丙烯酸酯系重複單元、苯乙烯系重複單元、乙烯醚系重複單元、以及降莰烯系重複單元;更佳為丙烯酸酯系重複單元、乙烯醚系重複單元及降莰烯系重複單元,且最佳為丙烯酸酯系重複單元。 The repeating unit (b) is not limited as long as it is a repeating unit obtained by polymerization such as addition polymerization, condensation polymerization, and addition condensation, but the repeating unit is preferably added by a carbon-carbon double bond. The resulting repeating unit is polymerized. And examples thereof include: an acrylate-based repeating unit (including a system having a substituent at the α-position and the β-position), a styrene-based repeating unit (including a system having a substituent at the α-position and the β-position), and a vinyl ether-based repeating unit. a repeating unit of a norbornene-based repeating unit, and a maleic acid derivative such as maleic anhydride, a derivative thereof, and maleimide. Preferred are an acrylate-based repeating unit, a styrene-based repeating unit, a vinyl ether-based repeating unit, and a norbornene-based repeating unit; more preferably an acrylate-based repeating unit, a vinyl ether-based repeating unit, and a norbornene-based repeating unit; And preferably an acrylate-based repeating unit.

在重複單元(by)為具有氟原子或矽原子的重複單元(亦即,對應於重複單元(b')或重複單元(b")的重複 單元)的案例中,重複單元(by)中的含氟原子的部分結構的實例相同於上述針對具有氟原子或矽原子之重複單元所描述者,且較佳為由上述式(F2)至式(F4)所代表的基團。又,重複單元(by)中的含矽原子的部分結構的實例相同於上述針對具有氟原子或矽原子的重複單元所描述者,較佳為由上述式(CS-1)至式(CS-3)所代表的基團。 In the repeating unit (by) is a repeating unit having a fluorine atom or a helium atom (that is, corresponding to a repeating unit (b') or a repeating unit (b") In the case of the unit), examples of the partial structure of the fluorine-containing atom in the repeating unit (by) are the same as those described above for the repeating unit having a fluorine atom or a halogen atom, and are preferably from the above formula (F2) to (F4) The group represented. Further, examples of the partial structure of the halogen-containing atom in the repeating unit (by) are the same as those described above for the repeating unit having a fluorine atom or a halogen atom, preferably from the above formula (CS-1) to the formula (CS-). 3) The group represented.

以疏水性樹脂中之全部的重複單元計,在疏水性樹脂中的重複單元(by)的含量較佳為10莫耳%至100莫耳%,更佳為20莫耳%至99莫耳%,更佳為30莫耳%至97莫耳%,且最佳為40莫耳%至95莫耳%。 The content of the repeating unit (by) in the hydrophobic resin is preferably from 10 mol% to 100 mol%, more preferably from 20 mol% to 99 mol%, based on all the repeating units in the hydrophobic resin. More preferably, it is 30% by mole to 97% by mole, and most preferably 40% by mole to 95% by mole.

以下繪示具有能夠增加對鹼性顯影液之溶解度之基團的重複單元(by)的具體實例,但本發明不受其限制。重複單元(by)的具體實例亦包括作為樹脂(B)之重複單元(a3)之具體實例而描述者。 Specific examples of the repeating unit (by) having a group capable of increasing the solubility to the alkaline developing solution are shown below, but the invention is not limited thereto. Specific examples of the repeating unit (by) also include those described as specific examples of the repeating unit (a3) of the resin (B).

在具體實例中,Ra代表氫原子、氟原子、甲基或三氟甲基。 In a specific example, Ra represents a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group.

作為對應於具有極性變換基(y)的重複單元(by)之單體的合成方法,例如可以參考國際公開第2010/067905號及國際公開第2010/067905號中所描述的方法來合成單體。 As a synthesis method of a monomer corresponding to a repeating unit (by) having a polar conversion group (y), a monomer can be synthesized by, for example, the method described in International Publication No. 2010/067905 and International Publication No. 2010/067905 .

疏水性樹脂中之具有能夠藉由酸的作用而分解之基團(z)的重複單元(bz)的實例相同於樹脂(B)中之具有酸分解性基之重複單元的實例。 An example of the repeating unit (bz) having a group (z) which can be decomposed by the action of an acid in the hydrophobic resin is the same as an example of a repeating unit having an acid-decomposable group in the resin (B).

在重複單元(bz)為具有氟原子或矽原子的重複單元(亦即,對應重複單元(b')或重複單元(b")的重複單元)的案例中,重複單元(bz)中含氟原子的部分結構相同於上述針對氟原子或矽原子之重複單元所述者,且較佳為由式(F2)至式(F4)所代表的基團。又,重複單元(by)中的含矽原子的部分結構相同於上述針對具有氟原子或矽原子之重複單元所述者,且較佳為式(CS-1)至式(CS-3)所代表的基團。 In the case where the repeating unit (bz) is a repeating unit having a fluorine atom or a halogen atom (that is, a repeating unit corresponding to the repeating unit (b') or the repeating unit (b"), the fluorine in the repeating unit (bz) The partial structure of the atom is the same as that described above for the repeating unit of the fluorine atom or the halogen atom, and is preferably a group represented by the formula (F2) to the formula (F4). Further, the content in the repeating unit (by) The partial structure of the ruthenium atom is the same as that described above for the repeating unit having a fluorine atom or a ruthenium atom, and is preferably a group represented by the formula (CS-1) to the formula (CS-3).

以疏水性樹脂中之全部的重複單元計,疏水性樹脂中之具有能夠藉由酸的作用而分解的基團(z)的重複單元(bz)的含量較佳為1莫耳%至80莫耳%,更佳為10莫耳%至80莫耳%,再更佳為20莫耳%至60莫耳%。 The content of the repeating unit (bz) having a group (z) capable of decomposing by the action of an acid in the hydrophobic resin is preferably from 1 mol% to 80 mol% based on all the repeating units in the hydrophobic resin. The ear %, more preferably 10 mol% to 80 mol%, still more preferably 20 mol% to 60 mol%.

以上描述了具有選自由(x)至(z)所組成之族群中的至少一個基團的重複單元(b),以疏水性樹脂中之全部的重複單元計,疏水性樹脂中的重複單元(b)的含量較佳為1莫耳%至98莫耳%,更佳為3莫耳%至98莫耳%,再更佳為5莫耳%至97莫耳%,且最佳為10莫耳%至95莫 耳%。 The above describes a repeating unit (b) having at least one group selected from the group consisting of (x) to (z), which is a repeating unit in a hydrophobic resin based on all repeating units in the hydrophobic resin ( The content of b) is preferably from 1 mol% to 98 mol%, more preferably from 3 mol% to 98 mol%, still more preferably from 5 mol% to 97 mol%, and most preferably 10 mol% Ears to 95% ear%.

以疏水性樹脂中之全部的重複單元計,重複單元(b')的含量較佳為1莫耳%至100莫耳%,更佳為3莫耳%至99莫耳%,尤佳為5莫耳%至97莫耳%,且最佳為10莫耳%至95莫耳%。 The content of the repeating unit (b') is preferably from 1 mol% to 100 mol%, more preferably from 3 mol% to 99 mol%, and particularly preferably 5, based on all the repeating units in the hydrophobic resin. Molar% to 97% by mole, and most preferably from 10 mole% to 95% by mole.

以疏水性樹脂中之全部的重複單元計,重複單元(b*)的含量較佳為1莫耳%至90莫耳%,更佳為3莫耳%至80莫耳%,再更佳為5莫耳%至70莫耳%,且最佳為10莫耳%至60莫耳%。以疏水性樹脂中之全部的重複單元計,與重複單元(b*)一起使用的具有氟原子或矽原子的重複單元的含量較佳為10莫耳%至99莫耳%,更佳為20莫耳%至97莫耳%,尤佳為30莫耳%至95莫耳%,且最佳為40莫耳%至90莫耳%。 The content of the repeating unit (b*) is preferably from 1 mol% to 90 mol%, more preferably from 3 mol% to 80 mol%, more preferably from all repeating units in the hydrophobic resin. 5 moles to 70 mole%, and most preferably 10 mole% to 60 mole%. The content of the repeating unit having a fluorine atom or a ruthenium atom used together with the repeating unit (b*) is preferably from 10 mol% to 99 mol%, more preferably 20, based on all the repeating units in the hydrophobic resin. Molar% to 97% by mole, particularly preferably 30% by mole to 95% by mole, and most preferably 40% by mole to 90% by mole.

以疏水性樹脂中之全部的重複單元計,重複單元(b")的含量較佳為1莫耳%至100莫耳%,更佳為3莫耳%至99莫耳%,再更佳為5莫耳%至97莫耳%,且最佳為10莫耳%至95莫耳%。 The content of the repeating unit (b") is preferably from 1 mol% to 100 mol%, more preferably from 3 mol% to 99 mol%, more preferably from all repeating units in the hydrophobic resin. 5 moles % to 97 mole %, and most preferably 10 mole % to 95 mole %.

疏水性樹脂可更包含由下式(CIII)所代表的重複單元: The hydrophobic resin may further comprise a repeating unit represented by the following formula (CIII):

在式(CIII)中,Rc31代表氫原子、烷基(可經氟原子及相似物取代)、氰基或-CH2-O-Rac2基,其中,Rac2代表氫原子、烷基或醯基。Rc31較佳為氫原子、甲基、羥甲基或三氟甲基,更佳為氫原子或甲基。 In the formula (CIII), R c31 represents a hydrogen atom, an alkyl group (which may be substituted by a fluorine atom and the like), a cyano group or a -CH 2 -OR ac2 group, wherein R ac2 represents a hydrogen atom, an alkyl group or a fluorenyl group. . R c31 is preferably a hydrogen atom, a methyl group, a methylol group or a trifluoromethyl group, more preferably a hydrogen atom or a methyl group.

Rc32代表具有烷基、環烷基、烯基、環烯基或芳基的基團。這些基團各可經含氟原子或含矽原子的基團及相似物所取代。 R c32 represents a group having an alkyl group, a cycloalkyl group, an alkenyl group, a cycloalkenyl group or an aryl group. Each of these groups may be substituted with a fluorine atom or a halogen atom-containing group and the like.

Lc3代表單鍵或二價連結基。 L c3 represents a single bond or a divalent linking group.

在式(CIII)中,Rc32的烷基較佳為碳數為3至20的直鏈型或分支型烷基。 In the formula (CIII), the alkyl group of R c32 is preferably a linear or branched alkyl group having a carbon number of 3 to 20.

環烷基較佳為碳數為3至20的環烷基。 The cycloalkyl group is preferably a cycloalkyl group having a carbon number of 3 to 20.

烯基較佳為碳數為3至20的烯基。 The alkenyl group is preferably an alkenyl group having 3 to 20 carbon atoms.

環烯基較佳為碳數為3至20的環烯基。 The cycloalkenyl group is preferably a cycloalkenyl group having 3 to 20 carbon atoms.

芳基較佳為碳數6為至20的芳基,更佳為苯基或萘基,且這些基團各可具有取代基。 The aryl group is preferably an aryl group having a carbon number of 6 to 20, more preferably a phenyl group or a naphthyl group, and each of these groups may have a substituent.

Rc32較佳為未經取代的烷基或者經氟原子取代的烷基。 R c32 is preferably an unsubstituted alkyl group or an alkyl group substituted by a fluorine atom.

Lc3的二價連結基較佳為伸烷基(較佳碳數為1至5)、氧基、伸苯基或酯鍵(由-COO-所代表的基團)。 The divalent linking group of L c3 is preferably an alkylene group (preferably having a carbon number of 1 to 5), an oxy group, a phenyl group or an ester bond (a group represented by -COO-).

亦較佳為疏水性樹脂更包含由下式(BII-AB)所代表的重複單元: It is also preferred that the hydrophobic resin further comprises a repeating unit represented by the following formula (BII-AB):

在式(BII-AB)中,Rc11'及Rc12'各獨立代表氫原子、氰基、鹵素原子或烷基。 In the formula (BII-AB), R c11 'and R c12 ' each independently represent a hydrogen atom, a cyano group, a halogen atom or an alkyl group.

Zc'代表用於形成包含兩個鍵結於Zc'的碳原子(C-C)之脂環結構的原子團。 Zc' represents an atomic group for forming an alicyclic structure containing two carbon atoms (C-C) bonded to Zc'.

在由式(III)及式(BII-AB)所代表的重複單元中的各基團經含氟原子或含矽原子的基團所取代的案例中,重複單元亦對應於上述具有氟原子或矽原子的重複單元。 In the case where each group in the repeating unit represented by the formula (III) and the formula (BII-AB) is substituted with a fluorine atom-containing or a halogen atom-containing group, the repeating unit also corresponds to the above-mentioned fluorine atom or A repeating unit of a ruthenium atom.

以下繪示由式(III)及式(BII-AB)所代表之重複單元的具體實例,但本發明不受其限制。在式中,Ra代表H、CH3、CH2OH、CF3或CN。順帶一提,Ra為CF3的重複單元亦對應於上述具有氟原子或矽原子的重複單元。 Specific examples of the repeating unit represented by the formula (III) and the formula (BII-AB) are shown below, but the invention is not limited thereto. In the formula, Ra represents H, CH 3 , CH 2 OH, CF 3 or CN. Incidentally, the repeating unit in which Ra is CF 3 also corresponds to the above repeating unit having a fluorine atom or a ruthenium atom.

類似於上述之樹脂(B),在疏水性樹脂中,當然較佳為諸如金屬之雜質的含量少,而且殘留單體或低聚物成分較佳為0質量%至10質量%,更佳為0質量%至5質量%,再更佳為0質量%至1質量%。滿足這些條件時,可以獲得不具有液中異物或隨時間變化之靈敏度或相似物的抗蝕劑組成物。再者,就解析度、抗蝕劑輪廓、抗蝕劑圖案的側壁、粗糙度及相似的觀點來看,分子量分布(Mw/Mn,亦稱為分散度)較佳為1至3,更佳為1至2,再更佳為1至1.8,最佳為1至1.5。 Similarly to the above-mentioned resin (B), in the hydrophobic resin, it is of course preferable that the content of impurities such as a metal is small, and the residual monomer or oligomer component is preferably from 0% by mass to 10% by mass, more preferably 0% by mass to 5% by mass, and more preferably 0% by mass to 1% by mass. When these conditions are satisfied, a resist composition which does not have a foreign matter in the liquid or a sensitivity or the like which changes with time can be obtained. Further, the molecular weight distribution (Mw/Mn, also referred to as dispersion) is preferably from 1 to 3, more preferably in terms of resolution, resist profile, sidewall of the resist pattern, roughness, and the like. It is from 1 to 2, more preferably from 1 to 1.8, most preferably from 1 to 1.5.

可以使用各種市售品作為疏水性樹脂,或可藉由習知的方法(例如自由基聚合)來合成樹脂。一般的合成方法的實例包括:分批聚合法,其使單體物質及起始劑溶解於溶劑中,並加熱溶液從而致使聚合作用;以及滴入式聚合法,其在1小時至10小時內向加熱溶劑中滴下添加包含單體物質與起始劑的溶液。較佳為滴入式聚合法。 Various commercially available products can be used as the hydrophobic resin, or the resin can be synthesized by a conventional method such as radical polymerization. Examples of general synthetic methods include: a batch polymerization method in which a monomer substance and an initiator are dissolved in a solvent, and the solution is heated to cause polymerization; and a dropping polymerization method which is carried out within 1 hour to 10 hours. A solution containing a monomer substance and a starter is added dropwise to the heated solvent. A drop-in polymerization method is preferred.

反應溶劑、聚合起始劑、反應條件(例如溫度、濃度)、 以及反應後的純化方法相同於針對樹脂(B)所描述者。 Reaction solvent, polymerization initiator, reaction conditions (eg temperature, concentration), And the purification method after the reaction is the same as that described for the resin (B).

以下繪示疏水性樹脂(HR)的具體實例。又,後述表1中所示為各樹脂中的重複單元的莫耳比(從左起依次對應於各重複單元)、重量平均分子量及分散度。 Specific examples of the hydrophobic resin (HR) are shown below. Further, Table 1 below shows the molar ratio of the repeating unit in each resin (corresponding to each repeating unit in order from the left), the weight average molecular weight, and the degree of dispersion.

本發明的感光化射線性或感放射線性樹脂組成物包含含氟原子或矽原子的疏水性樹脂,且疏水性樹脂不均勻分布於由感光化射線性或感放射線性樹脂組成物形成的膜的表層,因此當在液浸介質為水時,可以提高於烘烤後且曝光前之膜表面的後退接觸角,亦可以提高液浸液的追隨性。 The photosensitive ray-sensitive or radiation-sensitive resin composition of the present invention contains a fluorine- or atom-containing hydrophobic resin, and the hydrophobic resin is unevenly distributed on a film formed of a sensitized ray-sensitive or radiation-sensitive resin composition. The surface layer, therefore, when the liquid immersion medium is water, the receding contact angle of the film surface after baking and before exposure can be improved, and the followability of the liquid immersion liquid can also be improved.

在曝光時的溫度(通常為室溫23±3℃)且濕度45±5%時,本發明的感光化射線性或感放射線性樹脂組成物的塗膜烘烤後且曝光前的後退接觸角較佳為60°至90°,更佳為 65°或65°以上,再更佳為70°或70°以上,又更佳為75°或75°以上。 When the temperature at the time of exposure (usually room temperature 23±3° C.) and the humidity of 45±5%, the coating film of the sensitized ray-sensitive or radiation-sensitive resin composition of the present invention is baked and the receding contact angle before exposure Preferably 60° to 90°, more preferably 65° or more, more preferably 70° or more, and still more preferably 75° or more.

如上所述,疏水性樹脂不均勻分布於界面,但與界面活性劑不同,未必需要在分子內具有親水基,且亦可對極性/非極性物質的均勻混合沒有幫助。 As described above, the hydrophobic resin is not uniformly distributed at the interface, but unlike the surfactant, it is not necessary to have a hydrophilic group in the molecule, and it may not contribute to uniform mixing of the polar/nonpolar substance.

在液浸曝光步驟中,液浸液必須追隨以高速在晶圓上掃描而形成曝光圖案之曝光頭的移動而在晶圓上移動。因此,在動態狀態下液浸液與抗蝕劑膜的接觸角是重要的,且抗蝕劑需要具有允許液滴追隨曝光頭高速掃描而不會殘留液滴的性能。 In the immersion exposure step, the liquid immersion liquid must follow the movement of the exposure head that scans on the wafer at a high speed to form an exposure pattern to move on the wafer. Therefore, the contact angle of the liquid immersion liquid with the resist film in the dynamic state is important, and the resist needs to have a property of allowing the liquid droplets to follow the high-speed scanning of the exposure head without leaving liquid droplets.

疏水性樹脂為疏水性,且因此在鹼性顯影後顯影殘渣(浮渣)及BLOB缺陷容易惡化,但藉由在至少一個分支部具有三個或三個以上聚合物鏈,將提高鹼溶解速率(相較於直鏈型樹脂而言),並因此改善顯影殘渣(浮渣)、BLOB缺陷性能。 The hydrophobic resin is hydrophobic, and thus the development residue (scum) and BLOB defects are easily deteriorated after alkaline development, but the alkali dissolution rate is improved by having three or more polymer chains in at least one branch portion. (Compared to linear resin), and thus improved development residue (scum), BLOB defect performance.

在疏水性樹脂包含氟原子的案例中,以疏水性樹脂的分子量計,氟原子含量較佳為5質量%至80質量%,更佳為10質量%至80質量%。又,以疏水性樹脂中之全部的重複單元計,含氟原子的重複單元較佳為10莫耳%至100莫耳%,更佳為30莫耳%至100莫耳%。 In the case where the hydrophobic resin contains a fluorine atom, the fluorine atom content is preferably from 5% by mass to 80% by mass, and more preferably from 10% by mass to 80% by mass based on the molecular weight of the hydrophobic resin. Further, the repeating unit of the fluorine atom is preferably from 10 mol% to 100 mol%, more preferably from 30 mol% to 100 mol%, based on all the repeating units in the hydrophobic resin.

在疏水性樹脂包含矽原子的案例中,以疏水性樹脂的分子量計,矽原子含量較佳為2質量%至50質量%,更佳為2質量%至30質量%。又,以疏水性樹脂中之全部的重複單元計,含矽原子的重複單元較佳計為10莫耳%至90 莫耳%,更佳為20莫耳%至80莫耳%。 In the case where the hydrophobic resin contains a ruthenium atom, the ruthenium atom content is preferably from 2% by mass to 50% by mass, and more preferably from 2% by mass to 30% by mass based on the molecular weight of the hydrophobic resin. Further, the repeating unit containing a halogen atom is preferably from 10 mol% to 90% based on all the repeating units in the hydrophobic resin. More than 20% by mole, more preferably 20% by mole to 80% by mole.

疏水性樹脂的重量平均分子量較佳為1,000至100,000,更佳為2,000至50,000,再更佳為3,000至35,000。在此,樹脂的重量平均分子量表示藉由GPC(載體:四氫呋喃(THF))所量測而得的聚苯乙烯換算分子量。 The weight average molecular weight of the hydrophobic resin is preferably from 1,000 to 100,000, more preferably from 2,000 to 50,000, still more preferably from 3,000 to 35,000. Here, the weight average molecular weight of the resin represents a polystyrene-converted molecular weight measured by GPC (carrier: tetrahydrofuran (THF)).

疏水性樹脂可藉由適當調整其於感光化射線性或感放射線性樹脂組成物中的含量而使用,以使得感光化射線性或感放射線性樹脂膜具有以上範圍內的後退接觸角。以感光化射線性或感放射線性樹脂組成物的總固體含量計,疏水性樹脂的含量較佳為0.01質量%至20質量%,更佳為0.1質量%至15質量%,再更佳為0.1質量%至10質量%,又更佳為0.5質量%至8質量%。 The hydrophobic resin can be used by appropriately adjusting its content in the photosensitive ray-sensitive or radiation-sensitive resin composition so that the photosensitive ray-sensitive or radiation-sensitive resin film has a receding contact angle in the above range. The content of the hydrophobic resin is preferably from 0.01% by mass to 20% by mass, more preferably from 0.1% by mass to 15% by mass, even more preferably 0.1%, based on the total solid content of the photosensitive ray-sensitive or radiation-sensitive resin composition. The mass% to 10% by mass, and more preferably 0.5% by mass to 8% by mass.

疏水性樹脂可單獨使用一種或者將兩種或兩種以上組合使用。 The hydrophobic resin may be used alone or in combination of two or more.

[4]鹼性化合物 [4] Basic compounds

本發明的感光化射線性或感放射線性樹脂組成物較佳包含鹼性化合物,藉此減少自曝光至加熱為止的隨時間經過的性能變化。 The photosensitive ray-sensitive or radiation-sensitive resin composition of the present invention preferably contains a basic compound, thereby reducing the change in performance over time from exposure to heating.

較佳的鹼性化合物包括具有由下式(A)至式(E)所代表之結構的化合物: Preferred basic compounds include compounds having a structure represented by the following formula (A) to formula (E):

在式(A)及式(E)中,R200、R201及R202各可為相同或不相同,其代表氫原子、烷基(較佳碳數為1至20)、環烷基(較佳碳數為3至20)或芳基(碳數為6至20),並且R201與R202可彼此結合以形成環。 In the formulae (A) and (E), R 200 , R 201 and R 202 may each be the same or different and represent a hydrogen atom, an alkyl group (preferably having a carbon number of 1 to 20), or a cycloalkyl group ( A preferred carbon number is 3 to 20) or an aryl group (carbon number is 6 to 20), and R 201 and R 202 may be bonded to each other to form a ring.

R203、R204、R205及R206可各相同或不同,其代表碳數為1至20的烷基。 R 203 , R 204 , R 205 and R 206 may each be the same or different and represent an alkyl group having 1 to 20 carbon atoms.

作為上述烷基,具有取代基的烷基較佳為碳數為1至20的胺基烷基、碳數為1至20的羥基烷基、或者碳數為1至20的氰基烷基。 As the alkyl group, the alkyl group having a substituent is preferably an aminoalkyl group having 1 to 20 carbon atoms, a hydroxyalkyl group having 1 to 20 carbon atoms, or a cyanoalkyl group having 1 to 20 carbon atoms.

在式(A)及式(E)中的烷基更佳為未經取代。 The alkyl group in the formula (A) and the formula (E) is more preferably unsubstituted.

較佳的化合物實例包括:胍啶(guanidine)、胺基吡咯啶(aminopyrrolidine)、吡唑(pyrazole)、吡唑啉(pyrazoline)、哌嗪(piperazine)、胺基嗎啉(amino morpholine)、胺基烷基嗎啉(aminoalkylmorpholine)及哌啶(piperidine)。更佳的化合物實例包括:具有咪唑結構、二氮雜二環結構、鎓氫氧化物結構、鎓羧酸鹽結構、三烷基胺結構、苯胺結構或吡啶結構的化合物;具有羥基及/或醚鍵的烷基胺衍生物;以及具有羥基及/或醚鍵的苯胺衍生物。 Examples of preferred compounds include: guanidine, aminopyrrolidine, pyrazole, pyrazoline, piperazine, amino morpholine, amine Aminoalkylmorpholine and piperidine. Examples of more preferable compounds include: a compound having an imidazole structure, a diazabicyclo structure, a ruthenium hydroxide structure, a ruthenium carboxylate structure, a trialkylamine structure, an aniline structure or a pyridine structure; having a hydroxyl group and/or an ether; An alkylamine derivative of a bond; and an aniline derivative having a hydroxyl group and/or an ether bond.

具有咪唑結構的化合物的實例包括:咪唑、2,4,5-三苯基咪唑、苯并咪唑及2-苯基苯并咪唑。具有二氮雜二環結構的化合物的實例包括:1,4-二氮雜二環[2,2,2]辛烷、1,5-二氮雜二環[4,3,0]壬-5-烯及1,8-二氮雜二環[5,4,0]十一-7-烯。具有鎓氫氧化物結構的化合物的實例包括:四丁基氫 氧化銨、三芳基氫氧化鋶、苯甲醯甲基氫氧化鋶(phenacyl sulfonium hydroxide)及具有2-側氧烷基的氫氧化鋶,具體而言為三苯基氫氧化鋶、三(第三丁基苯基)氫氧化鋶、雙(第三丁基苯基)氫氧化錪、苯甲醯甲基噻吩鎓氫氧化物及2-側氧丙基噻吩鎓氫氧化物。具有鎓羧酸鹽結構的化合物為具有鎓氫氧化物結構的化合物的陰離子部份成為羧酸鹽的化合物,且其實例包括乙酸鹽、金剛烷-1-羧酸鹽及全氟烷基羧酸鹽。具有三烷基胺結構的化合物的實例包括三(正丁基)胺及三(正辛基)胺。苯胺化合物的實例包括:2,6-二異丙基苯胺、N,N-二甲基苯胺、N,N-二丁基苯胺及N,N-二己基苯胺。具有羥基及/或醚鍵的烷基胺衍生物的實例包括:乙醇胺、二乙醇胺、三乙醇胺、N-苯基二乙醇胺及三(甲氧基乙氧基乙基)胺。具有羥基及/或醚鍵的苯胺衍生物的實例包括N,N-雙(羥基乙基)苯胺。 Examples of the compound having an imidazole structure include imidazole, 2,4,5-triphenylimidazole, benzimidazole, and 2-phenylbenzimidazole. Examples of the compound having a diazabicyclo structure include: 1,4-diazabicyclo[2,2,2]octane, 1,5-diazabicyclo[4,3,0]fluorene- 5-ene and 1,8-diazabicyclo[5,4,0]undec-7-ene. Examples of the compound having a ruthenium hydroxide structure include: tetrabutyl hydrogen Ammonium oxide, triarylphosphonium hydroxide, phenacyl sulfonium hydroxide and barium hydroxide having a 2-sided oxyalkyl group, specifically triphenylphosphonium hydroxide, three (third Butylphenyl)phosphonium hydroxide, bis(t-butylphenyl)phosphonium hydroxide, benzamidine methylthiophene hydroxide and 2-oxopropylthiophene hydroxide. The compound having a ruthenium carboxylate structure is a compound having an anion portion of a compound having a ruthenium hydroxide structure as a carboxylate, and examples thereof include acetate, adamantane-1-carboxylate, and perfluoroalkylcarboxylic acid. salt. Examples of the compound having a trialkylamine structure include tri(n-butyl)amine and tri(n-octyl)amine. Examples of the aniline compound include: 2,6-diisopropylaniline, N,N-dimethylaniline, N,N-dibutylaniline, and N,N-dihexylaniline. Examples of the alkylamine derivative having a hydroxyl group and/or an ether bond include ethanolamine, diethanolamine, triethanolamine, N-phenyldiethanolamine, and tris(methoxyethoxyethyl)amine. Examples of the aniline derivative having a hydroxyl group and/or an ether bond include N,N-bis(hydroxyethyl)aniline.

其他較佳的鹼性化合物包括:含苯氧基的胺化合物、含苯氧基的銨鹽化合物、含磺酸酯基的胺化合物及含磺酸酯基的銨鹽化合物。 Other preferred basic compounds include a phenoxy-containing amine compound, a phenoxy-containing ammonium salt compound, a sulfonate group-containing amine compound, and a sulfonate group-containing ammonium salt compound.

胺化合物可以使用一級、二級或三級的胺化合物,且較佳為至少一個烷基鍵結於氮原子上的胺化合物。胺化合物更佳為三級胺化合物。在胺化合物中,只要至少一個烷基(較佳碳數為1至20)鍵結於氮原子上即可,除了烷基以外,環烷基(較佳碳數為3至20)或芳基(較佳碳數為6至12)亦可鍵結於氮原子上。胺化合物較佳在烷基鏈中具有氧原子而形成氧伸烷基。在分子內的氧伸烷基數量為 1個或多個,較佳為3個至9個,更佳為4個至6個。在氧伸烷基中,較佳為氧伸乙基(-CH2CH2O-)或者氧伸丙基(-CH(CH3)CH2O-或-CH2CH2CH2O-),且更佳為氧伸乙基。 The amine compound may be a primary, secondary or tertiary amine compound, and is preferably an amine compound in which at least one alkyl group is bonded to a nitrogen atom. The amine compound is more preferably a tertiary amine compound. In the amine compound, as long as at least one alkyl group (preferably having a carbon number of 1 to 20) is bonded to the nitrogen atom, a cycloalkyl group (preferably having a carbon number of 3 to 20) or an aryl group in addition to the alkyl group. (preferably having a carbon number of 6 to 12) may also be bonded to a nitrogen atom. The amine compound preferably has an oxygen atom in the alkyl chain to form an oxygen alkyl group. The number of oxygen alkyl groups in the molecule is one or more, preferably from 3 to 9, more preferably from 4 to 6. In the oxygen alkyl group, an oxygen extended ethyl group (-CH 2 CH 2 O-) or an oxygen extended propyl group (-CH(CH 3 )CH 2 O- or -CH 2 CH 2 CH 2 O-) is preferred. More preferably, it is an oxygen-extended ethyl group.

銨鹽化合物可使用一級、二級、三級或四級的銨鹽化合物,較佳為至少一個烷基鍵結於氮原子上的銨鹽化合物。在銨鹽化合物中,只要至少一個烷基(較佳碳數為1至20)鍵結於氮原子上即可,除了烷基以外,環烷基(較佳碳數為3至20)或芳基(較佳碳數為6至12)亦可鍵結於氮原子上。銨鹽化合物較佳在烷基鏈中具有氧原子而形成氧伸烷基。在分子內的氧伸烷基數量為1個或多個,較佳為3個至9個,更佳為4個至6個。在氧伸烷基中,較佳為氧伸乙基(-CH2CH2O-)或者氧伸丙基(-CH(CH3)CH2O-或-CH2CH2CH2O-),且更佳為氧伸乙基。 The ammonium salt compound may be a primary, secondary, tertiary or tertiary ammonium salt compound, preferably an ammonium salt compound in which at least one alkyl group is bonded to a nitrogen atom. In the ammonium salt compound, as long as at least one alkyl group (preferably having a carbon number of 1 to 20) is bonded to the nitrogen atom, a cycloalkyl group (preferably having a carbon number of 3 to 20) or an aromatic group in addition to the alkyl group. The base (preferably having a carbon number of 6 to 12) may also be bonded to the nitrogen atom. The ammonium salt compound preferably has an oxygen atom in the alkyl chain to form an oxygen alkyl group. The number of oxygen alkyl groups in the molecule is one or more, preferably from 3 to 9, more preferably from 4 to 6. In the oxygen alkyl group, an oxygen extended ethyl group (-CH 2 CH 2 O-) or an oxygen extended propyl group (-CH(CH 3 )CH 2 O- or -CH 2 CH 2 CH 2 O-) is preferred. More preferably, it is an oxygen-extended ethyl group.

銨鹽化合物的陰離子的實例包括:鹵素原子、磺酸鹽、硼酸鹽及磷酸鹽,以鹵素原子及磺酸鹽為較佳。鹵素原子較佳為氯化物、溴化物或碘化物,磺酸鹽較佳為碳數為1至20的有機磺酸鹽。有機磺酸鹽的實例包括:碳數為1至20的烷基磺酸鹽、以及芳基磺酸鹽。烷基磺酸鹽的烷基可具有取代基,且取代基的實例包括:氟、氯、溴、烷氧基、醯基及芳基。烷基磺酸鹽的具體實例包括:甲磺酸鹽、乙磺酸鹽、丁磺酸鹽、己磺酸鹽、辛磺酸鹽、苄基磺酸鹽、三氟甲磺酸鹽、五氟乙磺酸鹽及九氟丁磺酸鹽。芳基磺酸鹽的芳基包括:苯環、萘環及蒽環。苯環、萘環及蒽環可 具有取代基,且取代基較佳為碳數為1至6的直鏈型或分支型烷基、碳數為3至6的環烷基。直鏈型或分支型烷基及環烷基的具體實例包括:甲基、乙基、正丙基、異丙基、正丁基、異丁基、第三丁基、正己基及環己基。取代基的其他實例包括:碳數為1至6的烷氧基、鹵素原子、氰基、硝基、醯基及醯氧基。 Examples of the anion of the ammonium salt compound include a halogen atom, a sulfonate, a borate, and a phosphate, and a halogen atom and a sulfonate are preferred. The halogen atom is preferably a chloride, a bromide or an iodide, and the sulfonate is preferably an organic sulfonate having a carbon number of 1 to 20. Examples of the organic sulfonate include an alkylsulfonate having a carbon number of 1 to 20, and an arylsulfonate. The alkyl group of the alkyl sulfonate may have a substituent, and examples of the substituent include fluorine, chlorine, bromine, alkoxy, decyl and aryl. Specific examples of the alkyl sulfonate include: methanesulfonate, ethanesulfonate, butanesulfonate, hexanosulfonate, octanesulfonate, benzylsulfonate, trifluoromethanesulfonate, pentafluoro Ethane sulfonate and nonafluorobutane sulfonate. The aryl group of the aryl sulfonate includes a benzene ring, a naphthalene ring and an anthracene ring. Benzene ring, naphthalene ring and anthracene ring The substituent has a substituent, and the substituent is preferably a linear or branched alkyl group having a carbon number of 1 to 6, and a cycloalkyl group having a carbon number of 3 to 6. Specific examples of the linear or branched alkyl group and the cycloalkyl group include methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group, tert-butyl group, n-hexyl group and cyclohexyl group. Other examples of the substituent include an alkoxy group having a carbon number of 1 to 6, a halogen atom, a cyano group, a nitro group, a decyl group, and a decyloxy group.

含苯氧基的胺化合物及含苯氧基的銨鹽化合物為在烷基之與氮原子相對的末端具有苯氧基的胺化合物或銨鹽化合物。苯氧基可具有取代基。苯氧基之取代基的實例包括:烷基、烷氧基、鹵素原子、氰基、硝基、羧基、羧酸酯基、磺酸酯基、芳基、芳烷基、醯氧基及芳氧基。取代基的取代位可為2位至6位中的任意者,且取代基的數量可為1至5之範圍內的任意者。 The phenoxy-containing amine compound and the phenoxy-containing ammonium salt compound are amine compounds or ammonium salt compounds having a phenoxy group at the terminal end of the alkyl group opposite to the nitrogen atom. The phenoxy group may have a substituent. Examples of the substituent of the phenoxy group include an alkyl group, an alkoxy group, a halogen atom, a cyano group, a nitro group, a carboxyl group, a carboxylate group, a sulfonate group, an aryl group, an aralkyl group, a decyloxy group and an aromatic group. Oxygen. The substitution position of the substituent may be any of the 2 to 6 positions, and the number of the substituents may be any of the range of 1 to 5.

化合物較佳在苯氧基與氮原子之間具有至少一個氧伸烷基。在分子內的氧伸烷基數量為1個或多個,較佳為3個至9個,更佳為4個至6個。在氧伸烷基中,較佳為氧伸乙基(-CH2CH2O-)及氧伸丙基(-CH(CH3)CH2O-或-CH2CH2CH2O-),且更佳為氧伸乙基。 The compound preferably has at least one oxygen alkyl group between the phenoxy group and the nitrogen atom. The number of oxygen alkyl groups in the molecule is one or more, preferably from 3 to 9, more preferably from 4 to 6. Among the oxygen alkyl groups, an oxygen extended ethyl group (-CH 2 CH 2 O-) and an oxygen extended propyl group (-CH(CH 3 )CH 2 O- or -CH 2 CH 2 CH 2 O-) are preferred. More preferably, it is an oxygen-extended ethyl group.

在具有磺酸酯基的銨鹽化合物及具有磺酸酯基的銨鹽化合物中的磺酸酯基可為烷基磺酸酯、環烷基磺酸酯、芳基磺酸酯中的任一者。在烷基磺酸酯的案例中,較佳為碳數為1至20的烷基;在環烷基磺酸酯的案例中,較佳為碳數為3至20的環烷基;以及在芳基磺酸酯的案例中,較佳為碳數為6至12的芳基。烷基磺酸酯、環烷基磺酸酯及芳 基磺酸酯可具有取代基,且取代基較佳為鹵素原子、氰基、硝基、羧基、羧酸酯基或磺酸酯基。 The sulfonate group in the ammonium salt compound having a sulfonate group and the ammonium salt compound having a sulfonate group may be any one of an alkylsulfonate, a cycloalkylsulfonate, and an arylsulfonate. By. In the case of the alkyl sulfonate, an alkyl group having a carbon number of 1 to 20 is preferred; in the case of the cycloalkyl sulfonate, a cycloalkyl group having a carbon number of 3 to 20 is preferred; In the case of the aryl sulfonate, an aryl group having 6 to 12 carbon atoms is preferred. Alkyl sulfonate, cycloalkyl sulfonate and aromatic The sulfonate may have a substituent, and the substituent is preferably a halogen atom, a cyano group, a nitro group, a carboxyl group, a carboxylate group or a sulfonate group.

化合物較佳在磺酸酯基與氮原子之間具有至少一個氧伸烷基。在分子內的氧伸烷基數量為1個或多個,較佳為3個至9個,更佳為4個至6個。在氧伸烷基中,較佳為氧伸乙基(-CH2CH2O-)以及氧伸丙基(-CH(CH3)CH2O-或-CH2CH2CH2O-),更佳為氧伸乙基。 The compound preferably has at least one oxygen alkyl group between the sulfonate group and the nitrogen atom. The number of oxygen alkyl groups in the molecule is one or more, preferably from 3 to 9, more preferably from 4 to 6. Among the oxygen alkyl groups, an oxygen extended ethyl group (-CH 2 CH 2 O-) and an oxygen extended propyl group (-CH(CH 3 )CH 2 O- or -CH 2 CH 2 CH 2 O-) are preferred. More preferably, it is an oxygen-extended ethyl group.

以下所示之化合物亦作為較佳的鹼性化合物。 The compounds shown below are also preferred as basic compounds.

鹼性化合物可單獨使用一種,或可將兩種或兩種以上組合使用。 The basic compounds may be used alone or in combination of two or more.

本發明的組成物可包含或可不包含鹼性化合物,但在包含鹼性化合物的案例中,以感光化射線性或感放射線性樹脂組成物的固體含量計,鹼性化合物的量通常為0.001質量%至10質量%,較佳為0.01質量%至5質量%。 The composition of the present invention may or may not contain a basic compound, but in the case of containing a basic compound, the amount of the basic compound is usually 0.001 by mass based on the solid content of the sensitizing ray-sensitive or radiation-sensitive resin composition. From 0.01% by mass to 5% by mass, preferably from 0.01% by mass to 5% by mass.

酸產生劑(包括酸產生劑(A'))與鹼性化合物在組成物中的使用比例較佳為酸產生劑/鹼性化合物(莫耳比)=2.5至300。亦即,從靈敏度及解析度的觀點來看,莫耳比較佳為2.5或2.5以上;從抑制由於曝光後至加熱處理 前抗蝕劑圖案隨時間經過而變粗所引起的解析度下降的觀點來看,莫耳比較佳為300以下。酸產生劑/鹼性化合物(莫耳比)更佳為5.0至200,再佳為7.0至150。 The acid generator (including the acid generator (A')) and the basic compound are preferably used in the composition in an acid generator/basic compound (mole ratio) = 2.5 to 300. That is, from the viewpoint of sensitivity and resolution, the molar is preferably 2.5 or more; from the inhibition to the heat treatment From the viewpoint of a decrease in the resolution caused by the thickening of the front resist pattern over time, the molar ratio is preferably 300 or less. The acid generator/basic compound (mole ratio) is more preferably from 5.0 to 200, still more preferably from 7.0 to 150.

就後述項目[5]所描述的低分子化合物(D)來說,鹼性樹脂的使用條件較佳為於低分子化合物(D)/鹼性化合物=100/0至100/90,更佳於100/0至30/70,再更佳於100/0至50/50。 In the case of the low molecular compound (D) described in the item [5] described later, the use condition of the basic resin is preferably from the low molecular compound (D) / basic compound = 100 / 0 to 100 / 90, more preferably 100/0 to 30/70, and even better at 100/0 to 50/50.

順帶一提,本文所使用的鹼性化合物不包括亦為鹼性化合物之包含氮原子且具有能夠藉由酸的作用而脫離之基團的低分子化合物(D) Incidentally, the basic compound used herein does not include a low molecular compound (D) which is also a basic compound containing a nitrogen atom and having a group capable of being detached by the action of an acid.

[5]含氮原子且具有能夠藉由酸的作用而脫離的基團的低分子化合物 [5] Low molecular compound containing a nitrogen atom and having a group capable of being detached by the action of an acid

本發明的組成物可包括含氮原子且具有能夠藉由酸的作用而脫離的基團的低分子化合物(下文中,有些時候簡稱為「低分子化合物(D)」或者「組分(D)」)。 The composition of the present invention may include a low molecular compound having a nitrogen atom and having a group capable of being detached by the action of an acid (hereinafter, sometimes referred to as "low molecular compound (D)" or "component (D) in some cases). ").

能夠藉由酸的作用而脫離的基團不受特別限制,但其較佳為縮醛基、碳酸酯基、胺甲酸酯基、三級酯基、三級羥基或半醯胺醚基(hemiaminal ether group),更佳為胺甲酸酯基或半醯胺醚基。 The group which can be detached by the action of an acid is not particularly limited, but is preferably an acetal group, a carbonate group, a carbamate group, a tertiary ester group, a tertiary hydroxyl group or a semi-amine amine group ( Hemiaminal ether group), more preferably a carbamate or a hemiamine ether group.

具有能夠藉由酸的作用而脫離的基團的低分子化合物(D)的分子量較佳為100至1000,更佳為100至700,再更佳為100至500。 The molecular weight of the low molecular compound (D) having a group capable of being detached by the action of an acid is preferably from 100 to 1,000, more preferably from 100 to 700, still more preferably from 100 to 500.

化合物(D)較佳為在其氮原子上具有能夠藉由酸的 作用而脫離的基團的胺衍生物。 The compound (D) preferably has an acid capable of being on its nitrogen atom An amine derivative of a group which acts as a detachment.

化合物(D)可在其氮原子上具有含保護基的胺甲酸酯基。構成胺甲酸酯基的保護基可以由下式(d-1)代表之: The compound (D) may have a protecting group-containing carbamate group on its nitrogen atom. The protecting group constituting the carbamate group can be represented by the following formula (d-1):

在式(d-1)中,各Rb獨立代表氫原子、烷基、環烷基、芳基、芳烷基或烷氧基烷基。各個Rb可彼此結合以形成環。 In the formula (d-1), each Rb independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an arylalkyl group or an alkoxyalkyl group. Each Rb may be bonded to each other to form a ring.

由Rb所代表的烷基、環烷基、芳基及芳烷基各可經諸如羥基、氰基、胺基、吡咯啶基、哌啶基、嗎啉基及側氧基之官能基、烷氧基或鹵素原子所取代。此同樣適用於由Rb代表的烷氧基烷基。 The alkyl group, the cycloalkyl group, the aryl group and the aralkyl group represented by Rb may each pass through a functional group such as a hydroxyl group, a cyano group, an amine group, a pyrrolidinyl group, a piperidinyl group, a morpholinyl group and a pendant oxy group, and an alkane. Substituted by an oxy group or a halogen atom. The same applies to the alkoxyalkyl group represented by Rb.

Rb的烷基、環烷基、芳基及芳烷基(這些烷基、環烷基、芳基及芳烷基各可經上述官能基、烷氧基或鹵素原子所取代)的實例包括:衍生自諸如甲烷、乙烷、丙烷、丁烷、戊烷、己烷、庚烷、辛烷、壬烷、癸烷、十一烷及十二烷之直鏈型或分支型烷烴的基團,或將衍生自烷烴的基團以諸如環丁基、環戊基及環己基之環烷基的一種以上或一個以上的基團取代的基團;衍生自諸如環丁烷、環戊烷、環己烷、環庚烷、環辛烷、降莰烷、金剛烷及降金剛烷之環烷烴的基團,或將衍 生自環烷烴的基團以諸如甲基、乙基、正丙基、異丙基、正丁基、2-甲基丙基、1-甲基丙基及第三丁基之直鏈型或分支型烷基的一種以上或一個以上的基團取代的基團;衍生自諸如苯、萘及蒽之芳香族化合物的基團,或將衍生自芳香族化合物的基團以諸如甲基、乙基、正丙基、異丙基、正丁基、2-甲基丙基、1-甲基丙基及第三丁基之直鏈型或分支型烷基的一種以上或一個以上的基團取代的基團;衍生自諸如吡咯啶、哌啶、嗎啉、四氫呋喃、四氫吡喃、吲哚、吲哚啉、喹啉、全氫喹啉、吲唑(indazole)及苯并咪唑之雜環化合物的基團,或將衍生自雜環化合物的基團以衍生自直鏈型或分支型烷基或衍生自芳香族化合物的基團的一種以上或一個以上的基團取代的基團;將衍生自直鏈型或分支型烷烴的基團/衍生自環烷烴的基團以諸如苯基、萘基及蒽基之衍生自芳香族化合物的基團的一種以上或者一個以上的基團取代的基團;以及以上取代基經諸如羥基、氰基、胺基、吡咯啶基、哌啶基、嗎啉基及側氧基之官能基取代的基團。 Examples of the alkyl group, the cycloalkyl group, the aryl group and the aralkyl group of Rb (each of which may be substituted by the above functional group, alkoxy group or halogen atom) include: a group derived from a linear or branched alkane such as methane, ethane, propane, butane, pentane, hexane, heptane, octane, decane, decane, undecane and dodecane, Or a group substituted with an alkane-substituted group with one or more or more groups such as cyclobutyl, cyclopentyl and cyclohexyl cycloalkyl; derived from, for example, cyclobutane, cyclopentane, ring a group of cyclohexanes of cyclohexane, cycloheptane, cyclooctane, norbornane, adamantane, and adamantane, or a group derived from a cycloalkane in a linear form such as methyl, ethyl, n-propyl, isopropyl, n-butyl, 2-methylpropyl, 1-methylpropyl and t-butyl or a group substituted with one or more groups of a branched alkyl group; a group derived from an aromatic compound such as benzene, naphthalene, and anthracene, or a group derived from an aromatic compound such as a methyl group, a One or more or more groups of a linear or branched alkyl group of a group, n-propyl group, isopropyl group, n-butyl group, 2-methylpropyl group, 1-methylpropyl group and tert-butyl group Substituted group; derived from impurities such as pyrrolidine, piperidine, morpholine, tetrahydrofuran, tetrahydropyran, hydrazine, porphyrin, quinoline, perhydroquinoline, indazole, and benzimidazole a group of a ring compound, or a group substituted with a group derived from a heterocyclic compound, substituted with one or more groups derived from a linear or branched alkyl group or a group derived from an aromatic compound; a group derived from a linear or branched type alkane/a group derived from a cycloalkane derived from a group such as a phenyl group, a naphthyl group and a fluorenyl group a group substituted with one or more groups of a group of a fragrance compound; and the above substituents are via, for example, a hydroxyl group, a cyano group, an amine group, a pyrrolidinyl group, a piperidinyl group, a morpholinyl group, and a pendant oxy group. A functional group substituted group.

Rb較佳為直鏈型或分支型烷基、環烷基或芳基。更佳為直鏈型或分支型烷基或環烷基。 Rb is preferably a linear or branched alkyl group, a cycloalkyl group or an aryl group. More preferably, it is a linear or branched alkyl or cycloalkyl group.

藉由兩個Rb彼此結合所形成的環的實例包括脂環烴基、芳香族烴基、雜環烴基以及其衍生物。 Examples of the ring formed by bonding two Rbs to each other include an alicyclic hydrocarbon group, an aromatic hydrocarbon group, a heterocyclic hydrocarbon group, and a derivative thereof.

以下繪示由式(d-1)所代表的基團的具體結構。 The specific structure of the group represented by the formula (d-1) is shown below.

化合物(D)亦可藉由將上述鹼性化合物與由式(d-1)所代表的結構任意地結合而構成。 The compound (D) can also be constituted by arbitrarily combining the above basic compound with the structure represented by the formula (d-1).

化合物(D)更佳為具有由下式(A)所代表的結構的化合物。 The compound (D) is more preferably a compound having a structure represented by the following formula (A).

順帶一提,化合物(D)可為對應於上述鹼性化合物的化合物,只要其為具有能夠藉由酸的作用而脫離的基團的低分子化合物即可。 Incidentally, the compound (D) may be a compound corresponding to the above basic compound as long as it is a low molecular compound having a group which can be detached by the action of an acid.

在式(A)中,Ra代表氫原子、烷基、環烷基、芳基或芳烷基。又,當n=2時,兩個Ra可相同或不相同,且兩個Ra可彼此結合以形成二價雜環烴基(較佳之碳數為20或20以下)或其衍生物。 In the formula (A), Ra represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or an aralkyl group. Further, when n = 2, the two Ra may be the same or different, and the two Ra may be bonded to each other to form a divalent heterocycloalkyl group (preferably having a carbon number of 20 or less) or a derivative thereof.

Rb具有相同於上述式(d-1)中之Rb的意義,且較佳的實例亦相同,其限制條件為,當-C(Rb)(Rb)(Rb)中的一個或多個Rb為氫原子時,其餘Rb的至少一個為環丙基、1-烷氧基烷基或芳基。 Rb has the same meaning as Rb in the above formula (d-1), and preferred examples are also the same, with the constraint that when one or more Rb in -C(Rb)(Rb)(Rb) is In the case of a hydrogen atom, at least one of the remaining Rb is a cyclopropyl group, a 1-alkoxyalkyl group or an aryl group.

n代表0至2的整數,m代表1至3的整數,且n+m=3。 n represents an integer of 0 to 2, m represents an integer of 1 to 3, and n+m=3.

在式(A)中,Ra所代表的烷基、環烷基、芳基、芳烷基可經一基團所取代,此基團相同於由Rb所代表的烷基、環烷基、芳基及芳烷基上之可取代的基團。 In the formula (A), the alkyl group, the cycloalkyl group, the aryl group and the aralkyl group represented by Ra may be substituted by a group which is the same as the alkyl group, cycloalkyl group, and aromatic group represented by Rb. Substitutable groups on the aryl and alkyl groups.

Ra的烷基、環烷基、芳基及芳烷基(這些烷基、環烷基、芳基及芳烷基各可經上述基團取代)的具體實例包括與Rb之上述具體實例相同的基團。 Specific examples of the alkyl group, the cycloalkyl group, the aryl group and the aralkyl group of Ra (each of which may be substituted by the above groups) include the same as the above specific examples of Rb. Group.

藉由Ra彼此結合所形成的二價雜環烴基(較佳之碳數為1至20)或者其衍生物的實例包括:衍生自以下雜環化合物的基團,其諸如吡咯啶、哌啶、嗎啉、1,4,5,6-四氫嘧啶(1,4,5,6-tetrahydropyrimidine)、1,2,3,4-四氫喹啉、1,2,3,6-四氫吡啶、高哌嗪(homopiperazine)、4-氮雜苯并 咪唑、苯并三唑、5-氮雜苯并三唑、1H-1,2,3-三唑、1,4,7-三氮雜環壬烷、四唑、7-氮雜吲哚、吲唑、苯并咪唑、咪唑并[1,2-a]吡啶(imidazo[1,2-a]pyridine)、(1S,4S)-(+)-2,5-二氮雜二環[2.2.1]庚烷、1,5,7-三氮雜二環[4.4.0]癸-5-烯、吲哚、吲哚啉、1,2,3,4-四氫喹噁啉(1,2,3,4-tetrahydroquino xaline)、全氫喹啉及1,5,9-三氮雜環十二烷;以及將衍生自雜環化合物的基團以衍生自直鏈型或分支型烷烴的基團、衍生自環烷烴的基團、衍生自芳香族化合物的基團、衍生自雜環化合物的基團、以及諸如羥基、氰基、胺基、吡咯啶基、哌啶基、嗎啉基及側氧基之官能基的一種以上或一個以上的基團取代的基團。 Examples of the divalent heterocyclic hydrocarbon group (preferably having a carbon number of 1 to 20) or a derivative thereof formed by Ra bonding to each other include a group derived from a heterocyclic compound such as pyrrolidine or piperidine. Porphyrin, 1,4,5,6-tetrahydropyrimidine, 1,2,3,4-tetrahydroquinoline, 1,2,3,6-tetrahydropyridine, Homopiperazine, 4-azabenzo Imidazole, benzotriazole, 5-azabenzotriazole, 1H-1,2,3-triazole, 1,4,7-triazacyclononane, tetrazole, 7-azaindole, Carbazole, benzimidazole, imidazo[1,2-a]pyridine, (1S,4S)-(+)-2,5-diazabicyclo[2.2 .1] heptane, 1,5,7-triazabicyclo[4.4.0]non-5-ene, anthracene, porphyrin, 1,2,3,4-tetrahydroquinoxaline (1 , 2,3,4-tetrahydroquino xaline), perhydroquinoline and 1,5,9-triazacyclododecane; and a group derived from a heterocyclic compound derived from a linear or branched alkane a group derived from a cycloalkane, a group derived from an aromatic compound, a group derived from a heterocyclic compound, and a group such as a hydroxyl group, a cyano group, an amine group, a pyrrolidinyl group, a piperidinyl group, a morpholine. a group substituted with one or more than one group of the functional groups of the pendant oxy group.

以下繪示在本發明中之化合物(D)的特佳具體實例,但本發明不受其限制。 Particularly preferred examples of the compound (D) in the present invention are shown below, but the invention is not limited thereto.

可以基於例如日本專利特開2007-298569號公報及日本專利特開2009-199021號公報來合成由式(A)所代表的化合物。 The compound represented by the formula (A) can be synthesized based on, for example, JP-A-2007-298569 and JP-A-2009-199021.

在本發明中,含氮原子且具有能夠藉由酸的作用而脫離的基團的低分子化合物(D)可單獨使用一種,或者亦可將兩種或兩種以上混合使用。 In the present invention, the low molecular compound (D) having a nitrogen atom and having a group capable of being detached by the action of an acid may be used singly or in combination of two or more kinds.

本發明的感光化射線性或感放射線性樹脂組成物可包括或可不包括含氮原子且具有能夠藉由酸的作用而脫離的基團的低分子化合物(D),但在包含低分子化合物(D)的案例中,以與上述鹼性化合物組合之組成物的總固體化合物計,低分子化合物(D)的含量通常為0.001質量%至20質量%,較佳為0.001質量%至10質量%,更佳為0.01質量%至5質量%。 The photosensitive ray-sensitive or radiation-sensitive resin composition of the present invention may or may not include a low molecular compound (D) containing a nitrogen atom and having a group capable of being detached by the action of an acid, but containing a low molecular compound ( In the case of D), the content of the low molecular compound (D) is usually 0.001% by mass to 20% by mass, preferably 0.001% by mass to 10% by mass based on the total solid compound of the composition combined with the above basic compound. More preferably, it is 0.01% by mass to 5% by mass.

[6]界面活性劑 [6] surfactants

本發明的組成物可更包含界面活性劑,但在包含界面活性劑的案例中,界面活性劑較佳為含氟及/或含矽的界面活性劑。 The composition of the present invention may further comprise a surfactant, but in the case of including a surfactant, the surfactant is preferably a fluorine-containing and/or cerium-containing surfactant.

符合上述的界面活性劑的實例包括:Megafac F176及Megafac R08(由大日本油墨化學工業(DIC Corporation)製造);PF656及PF6320(由OMNOVA公司製造);Troysol S-366(由Troy Chemical(股)製造);Fluorad FC430(由住友3M(Sumitomo 3M)製造);以及聚矽氧烷聚合物KP-341(由信越化學工業(Shin-Etsu Chemical Co.,Ltd.)製造)。 Examples of the surfactants satisfying the above include: Megafac F176 and Megafac R08 (manufactured by Dainippon Ink Chemical Industry (DIC Corporation); PF656 and PF6320 (manufactured by OMNOVA); Troysol S-366 (by Troy Chemical) Manufactured; Fluorad FC430 (manufactured by Sumitomo 3M); and polyoxyalkylene polymer KP-341 (manufactured by Shin-Etsu Chemical Co., Ltd.).

亦可使用含氟及/或含矽的界面活性劑以外的界面活性劑。具體而言,其包括聚氧乙烯烷基醚類及聚氧乙烯烷基芳基醚類。 Surfactants other than fluorine-containing and/or barium-containing surfactants may also be used. Specifically, it includes polyoxyethylene alkyl ethers and polyoxyethylene alkyl aryl ethers.

此外,可以適當使用已知的界面活性劑。可使用的界面活性劑的實例包括在美國專利公開案第2008/0248425 A1號中段落第[0273]起所描述的界面活性劑。 Further, a known surfactant can be suitably used. Examples of surfactants that can be used include the surfactants described in paragraph [0273] of U.S. Patent Publication No. 2008/0248425 A1.

界面活性劑可單獨使用一種,或可將兩種或兩種以上組合使用。 The surfactants may be used alone or in combination of two or more.

本發明的感光化射線性或感放射線性樹脂組成物可包含或可不包含界面活性劑,但在包含界面活性劑的案例中,以組成物的總固體含量計,界面活性劑的使用量較佳為0至2質量%,更佳為0.0001質量%至2質量%,再更佳為0.0005質量%至1質量%。 The sensitizing ray-sensitive or radiation-sensitive resin composition of the present invention may or may not contain a surfactant, but in the case of including a surfactant, the surfactant is preferably used in terms of the total solid content of the composition. It is 0 to 2% by mass, more preferably 0.0001% by mass to 2% by mass, still more preferably 0.0005% by mass to 1% by mass.

另一方面,亦較佳為使界面活性劑的添加量為10 ppm或10 ppm以下,或者不包含界面活性劑。得益於此組態,疏水性樹脂更不均勻地分布於表面,從而使得抗蝕劑膜表面更疏水且可以提高液浸曝光時的水追隨性。 On the other hand, it is also preferred to add the surfactant to the amount of 10 ppm or less, or no surfactant. Thanks to this configuration, the hydrophobic resin is more unevenly distributed on the surface, so that the surface of the resist film is more hydrophobic and the water followability at the time of immersion exposure can be improved.

[7]溶劑 [7] Solvent

製備組成物時可以使用的溶劑不受特別的限制,只要其溶解各個成分即可,但其實例包括:伸烷基二醇單烷基醚羧酸酯(例如丙二醇單甲醚乙酸酯)、伸烷基二醇單烷基醚(例如丙二醇單甲醚)、乳酸烷基酯(例如乳酸乙酯、乳酸甲酯)、環狀內酯(例如γ-丁內酯,較佳碳數為4至10)、鏈狀或環狀的酮(例如2-庚酮、環己酮,較佳碳數為4至10)、碳酸烷基酯(較佳為諸如乙酸丁酯之乙酸烷酯)、以及烷氧基乙酸烷基酯(乙氧基丙酸乙酯)。其他可使用的溶劑例如包括美國專利申請公開案第2008/0248425A1號中段落第[0244]以下所描述的溶劑。 The solvent which can be used in the preparation of the composition is not particularly limited as long as it dissolves the respective components, but examples thereof include: an alkylene glycol monoalkyl ether carboxylate (for example, propylene glycol monomethyl ether acetate), An alkylene glycol monoalkyl ether (such as propylene glycol monomethyl ether), an alkyl lactate (such as ethyl lactate, methyl lactate), a cyclic lactone (such as γ-butyrolactone, preferably having a carbon number of 4) To 10), a chain or cyclic ketone (for example, 2-heptanone, cyclohexanone, preferably having a carbon number of 4 to 10), an alkyl carbonate (preferably an alkyl acetate such as butyl acetate), And an alkyl alkoxyacetate (ethyl ethoxypropionate). Other solvents that can be used include, for example, the solvents described below in paragraph [0244] of U.S. Patent Application Publication No. 2008/0248425 A1.

在以上溶劑中,較佳為伸烷基二醇單烷基醚羧酸酯及伸烷基二醇單烷基醚。 Among the above solvents, an alkylene glycol monoalkyl ether carboxylate and an alkylene glycol monoalkyl ether are preferred.

溶劑可單獨使用,或可將兩種或兩種以上混合使用。在混合兩種或兩種以上溶劑的案例中,較佳為具有羥基的溶劑與不具有羥基的溶劑混合。具有羥基的溶劑與不具有羥基的溶劑的質量比為1/99至99/1,較佳為10/90至90/10,更佳為20/80至60/40。 The solvent may be used singly or in combination of two or more. In the case of mixing two or more solvents, a solvent having a hydroxyl group is preferably mixed with a solvent having no hydroxyl group. The mass ratio of the solvent having a hydroxyl group to the solvent having no hydroxyl group is from 1/99 to 99/1, preferably from 10/90 to 90/10, more preferably from 20/80 to 60/40.

具有羥基的溶劑較佳為伸烷基二醇單烷基醚,而不具有羥基的溶劑較佳為伸烷基二醇單烷基醚羧酸酯。 The solvent having a hydroxyl group is preferably an alkylene glycol monoalkyl ether, and the solvent having no hydroxyl group is preferably an alkylene glycol monoalkyl ether carboxylate.

[8]其他組分 [8] Other components

除了上述組分以外,本發明的組成物可適當包含羧酸鎓鹽、例如在國際光學工程學會會報(Proceeding of Society of Photo-optical Instrumentation Engineers,Proceeding of SPIE)第2724,355號(1996)中所描述之分子量為3,000或3,000以下的溶解阻止化合物、染料、塑化劑、光敏劑、光吸收劑、以及相似物。 In addition to the above components, the composition of the present invention may suitably contain a cerium carboxylate salt, for example, in Proceeding of Society of Photo-optical Instrumentation Engineers, Proceeding of SPIE, No. 2724, 355 (1996). The dissolution preventing compounds, dyes, plasticizers, photosensitizers, light absorbers, and the like having a molecular weight of 3,000 or less are described.

[9]圖案形成方法 [9] Pattern forming method

本發明的圖案形成方法包括將抗蝕劑膜曝光及顯影的步驟。 The pattern forming method of the present invention includes the step of exposing and developing a resist film.

抗蝕劑膜是由上述本發明的感光化射線性或感放射線性樹脂組成物所形成,更具體而言,較佳為形成於基板上。在本發明的圖案形成方法中,可以藉由公知的方法來進行藉由抗蝕劑組成物將膜形成於基板上的步驟、將膜曝光的步驟、以及顯影步驟。 The resist film is formed of the above-described sensitized ray-sensitive or radiation-sensitive resin composition of the present invention, and more specifically, is preferably formed on a substrate. In the pattern forming method of the present invention, the step of forming a film on a substrate by a resist composition, the step of exposing the film, and the developing step can be performed by a known method.

從提高解析力的立場而言,本發明的感光化射線性或感放射線性樹脂組成物較佳使用於厚度為30奈米至250 奈米的膜中,更佳使用於厚度為30奈米至200奈米的膜中。可以藉由將感光化射線性或感放射線性樹脂組成物中的固體含量濃度設定至適當的範圍以獲得上述膜厚度,從而使膜具有適當的黏度並提高塗佈性及製膜性。 The photosensitive ray-sensitive or radiation-sensitive resin composition of the present invention is preferably used in a thickness of 30 nm to 250 from the standpoint of improving the resolution. The film of nano is preferably used in a film having a thickness of 30 nm to 200 nm. The film thickness can be obtained by setting the solid content concentration in the photosensitive ray-sensitive or radiation-sensitive resin composition to an appropriate range, thereby imparting an appropriate viscosity to the film and improving coatability and film formability.

本發明的感光化射線性或感放射線性樹脂組成物中的總固體含量濃度通常為1質量%至10質量%,較佳為1質量%至8.0質量%,更佳為1.0質量%至6.0質量%。 The total solid content concentration in the photosensitive ray-sensitive or radiation-sensitive resin composition of the present invention is usually from 1% by mass to 10% by mass, preferably from 1% by mass to 8.0% by mass, more preferably from 1.0% by mass to 6.0% by mass. %.

本發明的感光化射線性或感放射線性樹脂組成物是藉由將以上組分溶解於溶劑中並經由過濾器過濾後,塗覆於支持體上而使用。過濾器較佳為聚四氟乙烯製、聚乙烯製或尼龍製的過濾器,其孔徑為0.1微米或0.1微米以下,更佳為0.05微米或0.05微米以下,再更佳為0.03微米或0.03微米以下。可將多種過濾器以串聯或並列連接來使用。又,可將組成物過濾多次。再者,可在組成物經由過濾器過濾的前/後對組成物脫氣處理或相似的處理。 The photosensitive ray-sensitive or radiation-sensitive resin composition of the present invention is used by dissolving the above components in a solvent and filtering them through a filter, and applying them to a support. The filter is preferably a filter made of polytetrafluoroethylene, polyethylene or nylon having a pore diameter of 0.1 μm or less, more preferably 0.05 μm or less, still more preferably 0.03 μm or 0.03 μm. the following. A variety of filters can be used in series or in parallel. Also, the composition can be filtered multiple times. Further, the composition may be degassed or treated similarly before/after filtration of the composition through the filter.

組成物是藉由諸如旋塗器之適當的塗佈方法,而塗覆於使用於製造積體電路元件的基板(例如塗佈矽/二氧化矽的基板)上。接著將塗佈物乾燥,從而可以形成感光性的抗蝕劑膜。 The composition is applied to a substrate (for example, a substrate coated with tantalum/cerium oxide) for use in manufacturing integrated circuit components by a suitable coating method such as a spin coater. Then, the coating material is dried to form a photosensitive resist film.

以穿過預定遮罩的光化射線或放射線照射膜,較佳對膜進行烘烤(加熱),並接著進行顯影及沖洗,從而可獲得良好的圖案。順帶一提,在以電子束的照射的案例中,通常是進行無遮罩微影(直接微影法,direct lithography)。 The film is irradiated with actinic rays or radiation passing through a predetermined mask, and the film is preferably baked (heated), followed by development and rinsing, whereby a good pattern can be obtained. Incidentally, in the case of irradiation with an electron beam, a maskless lithography (direct lithography) is usually performed.

在製膜後且在曝光步驟前,圖案形成方法較佳包含預 加熱步驟(pre-bake,PB)。 The pattern forming method preferably includes a pre-filming method and before the exposing step Heating step (pre-bake, PB).

又,在曝光步驟後且在顯影步驟前,圖案形成方法亦較佳包含曝光後加熱步驟(Post Exposure Bake,PEB)。 Further, after the exposure step and before the development step, the pattern forming method preferably further includes a Post Exposure Bake (PEB).

關於加熱溫度,PB及PEB兩者均較佳為70℃至120℃,更佳在80℃至110℃。 Regarding the heating temperature, both PB and PEB are preferably from 70 ° C to 120 ° C, more preferably from 80 ° C to 110 ° C.

加熱時間較佳為30秒至300秒,更佳為30秒至180秒,再更佳為30秒至90秒。 The heating time is preferably from 30 seconds to 300 seconds, more preferably from 30 seconds to 180 seconds, still more preferably from 30 seconds to 90 seconds.

可以使用附加於常規之曝光/顯影機的元件以來進行加熱,或可使用加熱板或相似物來進行加熱。 Heating may be performed using an element attached to a conventional exposure/developer, or a heating plate or the like may be used for heating.

得益於烘烤,將加速曝光區域的反應,並改善靈敏度及圖案輪廓。 Thanks to baking, the reaction in the exposed area is accelerated and the sensitivity and pattern profile are improved.

光化射線或放射線不受特別限制,但其例如為KrF準分子雷射、ArF準分子雷射、EUV光或電子束,較佳為ArF準分子雷射、EUV光或電子束。 The actinic ray or radiation is not particularly limited, but it is, for example, a KrF excimer laser, an ArF excimer laser, an EUV light or an electron beam, preferably an ArF excimer laser, an EUV light or an electron beam.

使用於顯影步驟中的鹼性顯影液通常使用四甲基氫氧化銨所代表的四級銨鹽,但除此化合物外,亦可以使用無機鹼、一級至三級胺、醇胺、環狀胺或其相似物的鹼性水溶液。 The alkaline developing solution used in the developing step usually uses a quaternary ammonium salt represented by tetramethylammonium hydroxide, but in addition to the compound, an inorganic base, a primary to tertiary amine, an alcoholamine, a cyclic amine can also be used. Or an alkaline aqueous solution of its analog.

再者,可以在此鹼性顯影液中添加適量的醇類及界面活性劑後,再行使用此鹼性顯影液。 Further, after adding an appropriate amount of an alcohol and a surfactant to the alkaline developing solution, the alkaline developing solution may be used.

鹼性顯影液的鹼濃度通常為0.1質量%至20質量%。 The alkali concentration of the alkaline developer is usually from 0.1% by mass to 20% by mass.

鹼性顯影液的pH值通常為10.0至15.0。 The pH of the alkaline developer is usually from 10.0 to 15.0.

沖洗溶液亦可使用純水,並可在使用前於沖洗溶液中添加適量的界面活性劑。 Pure water may also be used for the rinsing solution, and an appropriate amount of surfactant may be added to the rinsing solution before use.

可應用之顯影方法例如為:將基板在裝滿顯影液的槽中浸漬一定時間的方法(浸漬法);藉由表面張力的效應,在基板表面堆起顯影液,並將其靜止一定時間而進行顯影的方法(覆液法(puddle method));對基板表面噴灑顯影液的方法(噴灑法);以及在基板以恆定速度旋轉時,以恆定速率掃描顯影液噴射噴嘴,在基板上連續噴射顯影液的方法(動態分配法(dynamic dispense method)。 The developing method to be applied is, for example, a method of immersing a substrate in a tank filled with a developing solution for a certain period of time (dipping method); by the effect of surface tension, a developing solution is piled up on the surface of the substrate, and it is allowed to stand for a certain period of time. a method of developing (puddle method); a method of spraying a developer on a surface of a substrate (spraying method); and scanning a developer jet nozzle at a constant rate when the substrate is rotated at a constant speed, continuously ejecting on the substrate A method of developing a solution (dynamic dispense method).

在顯影步驟或沖洗步驟之後,可進行藉由超臨界流體(supercritical fluid)而將附著於圖案上的顯影液或沖洗溶液去除的處理。 After the developing step or the rinsing step, a treatment of removing the developing solution or the rinsing solution attached to the pattern by a supercritical fluid may be performed.

在形成感光性膜(抗蝕劑膜)之前,可預先藉由在基板上的塗佈以提供抗反射膜。 The antireflection film may be provided in advance by coating on the substrate before forming the photosensitive film (resist film).

可以使用的抗反射膜可為諸如鈦、二氧化鈦、氮化鈦、氧化鉻、碳及非晶矽的無機膜型或是吸光劑及聚合物材料所組成的有機膜型。有機抗反射膜亦可使用諸如Brewer Science公司製造的DUV30系列及DUV-40系列、以及Shipley公司製造的AR-2、AR-3及AR-5之市售的有機抗反射膜。 The antireflection film which can be used may be an inorganic film type such as titanium, titanium oxide, titanium nitride, chromium oxide, carbon, and amorphous germanium or an organic film type composed of a light absorbing agent and a polymer material. As the organic antireflection film, a commercially available organic antireflection film such as DUV30 series and DUV-40 series manufactured by Brewer Science Co., Ltd., and AR-2, AR-3, and AR-5 manufactured by Shipley Corporation can also be used.

以光化射線或放射線照射時,可藉由在膜與透鏡之間裝滿折射率高於空氣的液體(液浸介質)來進行曝光(液浸曝光)。藉由此曝光,可以提高解析度。所使用的液浸介質較佳為水。就小的折射率溫度係數、獲取的容易度及操作的容易度的觀點來看,水亦為較佳。 When irradiated with actinic rays or radiation, exposure (liquid immersion exposure) can be performed by filling a liquid (liquid immersion medium) having a refractive index higher than air between the film and the lens. By this exposure, the resolution can be improved. The liquid immersion medium used is preferably water. Water is also preferable from the viewpoint of a small refractive index temperature coefficient, ease of acquisition, and ease of handling.

再者,就可以提高折射率的立場而言,亦可使用折射 率為1.5或1.5以上的介質。介質可為水溶液或有機溶劑。 Furthermore, in terms of the position at which the refractive index can be increased, refraction can also be used. A medium with a ratio of 1.5 or more. The medium can be an aqueous solution or an organic solvent.

在使用水作為液浸液的案例中,亦可以微小的比例添加以提高折射率或相似物為目的的添加劑。添加劑的實例詳細描述於CMC出版社(CMC Shuppan)的液浸微影法的製程與材料(Ekishin Lithography no Process to Zairyo(Process and Material of Immersion Lithography))的第12章中。另一方面,對193奈米的光為不透明的物質或折射率與水大為不同的雜質的存在會導致投影至膜上的光學影像的失真。因此,所使用的水較佳為蒸餾水。亦可使用經由離子交換過濾器或相似器材而進一步純化的純水。純水的電阻較理想為18.3兆歐公分(MQcm)或18.3兆歐公分公分以上,而全部的有機碳濃度(total organic carbon,TOC)較佳為億萬分之20份或億萬分之20份以下。又,較佳對水進行脫氣處理。 In the case of using water as the liquid immersion liquid, an additive for the purpose of increasing the refractive index or the like may be added in a small ratio. Examples of the additive are described in detail in Chapter 12 of the Ekishin Lithography no Process to Zairyo (Process and Material of Immersion Lithography) by CMC Press (CMC Shuppan). On the other hand, the presence of an opaque substance of 193 nm or an impurity having a refractive index different from that of water causes distortion of an optical image projected onto the film. Therefore, the water used is preferably distilled water. Pure water further purified via an ion exchange filter or similar equipment can also be used. The resistance of pure water is preferably 18.3 mega-cm (MQcm) or 18.3 mega-cm cm or more, and the total organic carbon (TOC) is preferably 20 parts per billion or 20 parts per billion. The following. Further, it is preferred to subject the water to a degassing treatment.

為了防止抗蝕劑膜與液浸液直接接觸,亦可提供液浸液難溶性膜(下文中,有些時候簡稱為「頂塗層」)於形成的抗蝕劑膜與液浸液之間。頂塗層所必需的功能為:塗佈作為抗蝕劑覆蓋層的適應性;對放射線(特別是193奈米波長的放射線)的透明性;以及液浸液難溶性。頂塗層較佳可不與抗蝕劑膜混合且能夠均勻地塗覆作為抗蝕劑的覆蓋層。 In order to prevent the resist film from directly contacting the liquid immersion liquid, a liquid immersion liquid poorly soluble film (hereinafter, sometimes referred to simply as "top coat layer") may be provided between the formed resist film and the liquid immersion liquid. The functions necessary for the top coat are: suitability for coating as a resist cover layer; transparency for radiation (especially radiation of 193 nm wavelength); and poor solubility of liquid immersion liquid. The top coat layer preferably does not mix with the resist film and can uniformly coat the cover layer as a resist.

從193奈米光之透明性的觀點來看,頂塗層較佳為不含芳香族的聚合物,且此種聚合物的實例包括:烴聚合物、丙烯酸酯聚合物、聚甲基丙烯酸、聚丙烯酸、聚乙烯醚、 含矽聚合物及含氟聚合物。上述疏水性樹脂適於作為頂塗層。若雜質從頂塗層中溶出至液浸液中時,則會污染光學透鏡。因此,頂塗層中所包含的聚合物的殘留單體組分的量較佳為越少越好。 From the viewpoint of transparency of 193 nm light, the top coat layer is preferably an aromatic-free polymer, and examples of such a polymer include: a hydrocarbon polymer, an acrylate polymer, a polymethacrylic acid, a poly Acrylic acid, polyvinyl ether, A ruthenium containing polymer and a fluoropolymer. The above hydrophobic resin is suitable as a top coat. If impurities are eluted from the top coat into the liquid immersion liquid, the optical lens is contaminated. Therefore, the amount of the residual monomer component of the polymer contained in the top coat layer is preferably as small as possible.

剝離頂塗層時,可使用顯影液,或可另行使用剝離劑(releasing agent)。剝離劑較佳為對抗蝕劑之滲透較小的溶劑。就剝離步驟可與抗蝕劑的顯影步驟同時進行的立場而言,頂塗層較佳為可用鹼性顯影液來剝離的;而就用鹼性顯影液來剝離的觀點而言,頂塗層較佳為酸性;但就與抗蝕劑之非混用性的觀點而言,頂塗層可為中性或鹼性。 When the top coat is peeled off, a developer may be used, or a releasing agent may be additionally used. The release agent is preferably a solvent which is less permeable to the resist. Insofar as the stripping step can be performed simultaneously with the development step of the resist, the top coat layer is preferably peeled off with an alkaline developer; and from the viewpoint of peeling off with an alkaline developer, the top coat layer It is preferably acidic; however, the top coat layer may be neutral or alkaline from the viewpoint of non-mixability with the resist.

在頂塗層與液浸液之間的折射率的差較佳為零或小的。在此種狀況中,可以提高解析度。在曝光光源為ArF準分子雷射(波長:193奈米)的案例中,較佳使用水作為液浸液,且因此用於ArF液浸曝光的頂塗層的折射率較佳為接近水的折射率(1.44)。 The difference in refractive index between the top coat and the liquid immersion liquid is preferably zero or small. In this case, the resolution can be improved. In the case where the exposure light source is an ArF excimer laser (wavelength: 193 nm), water is preferably used as the liquid immersion liquid, and thus the refractive index of the top coat for ArF immersion exposure is preferably close to water. Refractive index (1.44).

又,由透明性及折射率的觀點來看,頂塗層較佳為薄膜。頂塗層較佳不與抗蝕劑膜混合,且進而亦不與液浸液混合。就這個立場而言,當液浸液為水時,用於頂塗層的溶劑較佳為難溶於本發明的感光化射線性或感放射線性樹脂組成物所使用的溶劑中,且不溶於水中。再者,當液浸液為有機溶劑時,頂塗層可為水溶性或非水溶性。 Further, the top coat layer is preferably a film from the viewpoint of transparency and refractive index. The top coat layer is preferably not mixed with the resist film and, in turn, is not mixed with the liquid immersion liquid. From this standpoint, when the liquid immersion liquid is water, the solvent for the top coat layer is preferably poorly soluble in the solvent used in the sensitizing ray-sensitive or radiation-sensitive resin composition of the present invention, and is insoluble in water. . Further, when the liquid immersion liquid is an organic solvent, the top coat layer may be water-soluble or water-insoluble.

本發明亦關於製造電子元件的方法,包括本發明的圖案形成方法、以及藉由此製造方法所製造的電子元件。 The present invention also relates to a method of manufacturing an electronic component, including the pattern forming method of the present invention, and an electronic component manufactured by the manufacturing method.

本發明的電子元件適於裝載於電子設備(諸如家用電 子元件、辦公室媒體相關元件(OA˙media-related device)、光學元件及通訊元件)上。 The electronic component of the present invention is adapted to be loaded on an electronic device (such as household electricity) Sub-components, OA ̇media-related devices, optical components, and communication components.

實例 Instance

以下藉由參考實例更詳細地說明本發明,但本發明不受其限制。 The invention is explained in more detail below by reference to examples, but the invention is not limited thereto.

[合成例1:化合物A-6的合成] [Synthesis Example 1: Synthesis of Compound A-6] 9-乙基咔唑-2,7-二四氫噻吩鎓二九氟丁磺酸鹽 9-ethylcarbazole-2,7-ditetrahydrothiophene quinodifluorosulfonate

將乙基咔唑(5克)及11.7克的四亞甲基亞碸溶解於80克的氯仿中,並將溶液冷卻至-50℃。接著,緩慢地逐滴添加23.7克的三氟乙酸酐及16.9克的三氟甲磺酸(trifluoromethanesulfonic acid),並將溫度加熱至-20℃。攪拌2個小時後,將溫度提高至室溫,並添加以150克的水溶解25克九氟丁磺酸鉀鹽的溶液及50克的乙腈。攪拌30分鐘後,以純水清洗氯仿層三次,並接著在減壓環境中以蒸餾水去除溶劑。以環戊基甲醚漿拌(slurry)殘留物以獲得23.6克的以下所示的化合物A-6。 Ethyl oxazole (5 g) and 11.7 g of tetramethylene sulfonium were dissolved in 80 g of chloroform, and the solution was cooled to -50 °C. Next, 23.7 g of trifluoroacetic anhydride and 16.9 g of trifluoromethanesulfonic acid were slowly added dropwise, and the temperature was heated to -20 °C. After stirring for 2 hours, the temperature was raised to room temperature, and a solution of 25 g of potassium nonafluorobutanesulfonate and 50 g of acetonitrile were dissolved in 150 g of water. After stirring for 30 minutes, the chloroform layer was washed three times with pure water, and then the solvent was removed with distilled water under reduced pressure. The residue was slurried with cyclopentyl methyl ether slurry to obtain 23.6 g of the compound A-6 shown below.

1H-NMR(300 MHz,CDCl3):δ9.0(s.2H),δ7.9(d.2H),δ7.65(d.2H),δ4.3(q.2H),δ4.1(m.4H),δ3.9(m.4H),δ2.8(m. 4H),δ2.4(m,4H),δ1.4(t.3H)。 1 H-NMR (300 MHz, CDCl 3 ): δ 9.0 (s. 2H), δ 7.9 (d. 2H), δ 7.65 (d. 2H), δ 4.3 (q. 2H), δ 4. 1 (m. 4H), δ 3.9 (m. 4H), δ 2.8 (m. 4H), δ 2.4 (m, 4H), δ 1.4 (t. 3H).

藉由與合成例1相同的方法,來合成後述表2所示的其他光酸產生劑。 Other photoacid generators shown in Table 2 below were synthesized by the same method as in Synthesis Example 1.

[合成例2:樹脂C的合成] [Synthesis Example 2: Synthesis of Resin C]

在氮氣流下,將11.5克的環己酮充入至三口燒瓶中,並加熱至85℃。接著,將藉由溶解下列化合物(單體)(化合物的量由左開始為1.98克、3.05克、0.98克、2.19克及2.76克)、以及聚合起始劑V-610(由和光純藥工業(Wako Pure Chemical Industries,Ltd.)製造,0.599克)於21.0克的環己酮所獲得的溶液花超過6小時逐滴添加至上述三口燒瓶中。完成逐滴添加後,進而在85℃下容許反應進行2小時。將反應液放冷後,接著花超過20分鐘將反應液逐滴加入至420克的己烷/180克的乙酸乙酯的混合溶液中,並藉由過濾器收集沈澱的粉末並乾燥之,以獲得9.1克的樹脂c。由NMR求出的聚合物組成比(莫耳比)為20/25/10/30/15。以標準聚苯乙烯所獲得之樹脂c的重量平均分子量為9,200,而多分散度(polydispersity,Mw/Mn)為1.55。 11.5 g of cyclohexanone was charged into a three-necked flask under a nitrogen stream and heated to 85 °C. Next, by dissolving the following compounds (monomers) (the amount of the compound is 1.98 g, 3.05 g, 0.98 g, 2.19 g, and 2.76 g from the left), and the polymerization initiator V-610 (from Wako Pure Chemical Industries, Ltd.) (Wako Pure Chemical Industries, Ltd.), 0.599 g) A solution obtained from 21.0 g of cyclohexanone was added dropwise to the above-mentioned three-necked flask over 6 hours. After completion of dropwise addition, the reaction was allowed to proceed for 2 hours at 85 °C. After the reaction solution was allowed to cool, the reaction solution was added dropwise to a mixed solution of 420 g of hexane/180 g of ethyl acetate over a period of 20 minutes, and the precipitated powder was collected by a filter and dried to obtain 9.1 g of resin c were obtained. The polymer composition ratio (Mohr ratio) determined by NMR was 20/25/10/30/15. The resin c obtained by standard polystyrene had a weight average molecular weight of 9,200 and a polydispersity (Mw/Mn) of 1.55.

藉由與合成例2相同的方法,來合成樹脂a、樹脂b及樹脂d至樹脂f。 Resin a, resin b, and resin d to resin f were synthesized by the same method as in Synthesis Example 2.

〈感光化射線性或者感放射線性樹脂組成物的製備〉 <Preparation of sensitized ray-sensitive or radiation-sensitive resin composition>

使以下表2所示的組分溶解於溶劑中以製備固體含量濃度為4質量%的溶液,並經由孔徑尺寸為0.05微米的聚乙烯過濾器過濾溶液,以製備感光化射線性或感放射線性樹脂組成物。藉由下列方法來評價感光化射線性或感放射線性樹脂組成物,並將結果示於表2中。 The components shown in the following Table 2 were dissolved in a solvent to prepare a solution having a solid content concentration of 4% by mass, and the solution was filtered through a polyethylene filter having a pore size of 0.05 μm to prepare sensitized ray or radiation. Resin composition. The sensitized ray-sensitive or radiation-sensitive resin composition was evaluated by the following method, and the results are shown in Table 2.

表中的各成分在使用多種類的案例中的比為質量比。 The ratio of each component in the table in the case of using multiple types is the mass ratio.

順帶一提,在表2中,當感光化射線性或感放射線性樹脂組成物包含疏水性樹脂(HR)時,將其使用形態標記為「添加」。而當感光化射線性或感放射線性樹脂組成物不包含疏水性樹脂(HR)時,且在形成膜後,形成包含疏水性樹脂(HR)的頂塗層保護膜作為膜的覆蓋層,將其使用形態標記為「TC」。 Incidentally, in Table 2, when the photosensitive ray-sensitive or radiation-sensitive resin composition contains a hydrophobic resin (HR), its use form is referred to as "addition". When the photosensitive ray-sensitive or radiation-sensitive resin composition does not contain a hydrophobic resin (HR), and after the film is formed, a top coat protective film containing a hydrophobic resin (HR) is formed as a cover layer of the film, Its usage pattern is marked as "TC".

〈抗蝕劑的評價〉 <Evaluation of Resist> (曝光條件1:ArF液浸曝光)(實例1至實例10及實例13至實例23,對照例1及對照例2) (Exposure Condition 1: ArF immersion exposure) (Examples 1 to 10 and Examples 13 to 23, Comparative Example 1 and Comparative Example 2)

將有機抗反射膜ARC29SR(由日產化學工業(Nissan Chemical Industries,Ltd.)製造)塗覆於12吋矽晶圓上,並於205℃下烘烤60秒以形成厚度為98奈米的抗反射膜,並將以上製備的感光化射線性或感放射線性樹脂組成物塗覆於上述12吋矽晶圓上並於130℃下烘烤60秒以形成厚度為120奈米的抗蝕劑膜。在使用頂塗層的案例中, 將3質量%的溶液塗覆於以上所獲得的膜上(此溶液是藉由將以下表2所示之作為頂塗層樹脂的疏水性樹脂(HR)溶於癸烷/辛醇(質量比:9/1)中而製備),並接著於85℃下烘烤60秒以形成厚度為50奈米的頂塗層。藉由使用ArF準分子雷射液浸掃描儀(immersion scanner)(XT1700i,由ASML製造,NA:1.20,C-Quad,外σ:0.981,內σ:0.895,XY偏轉)將所得之晶圓經由線寬為48奈米之線與空間比為1:1之6%的半色調(halftone)遮罩曝光。使用超純水作為液浸液。之後,在100℃下將晶圓加熱60秒、將其浸置於四甲基氫氧化銨水溶液(2.38質量%)中顯影30秒、再將其浸置於純水中清洗,接著將其旋轉乾燥以形成圖案。 An organic anti-reflection film ARC29SR (manufactured by Nissan Chemical Industries, Ltd.) was coated on a 12-inch wafer and baked at 205 ° C for 60 seconds to form an anti-reflection having a thickness of 98 nm. A film, and the above-prepared photosensitive ray-sensitive or radiation-sensitive resin composition was applied onto the above 12-inch wafer and baked at 130 ° C for 60 seconds to form a resist film having a thickness of 120 nm. In the case of using a top coat, A 3% by mass solution was applied to the film obtained above (this solution was dissolved in decane/octanol by mass ratio of hydrophobic resin (HR) as a top coat resin shown in Table 2 below) : Prepared in 9/1), and then baked at 85 ° C for 60 seconds to form a top coat having a thickness of 50 nm. The resulting wafer was passed via an immersion scanner (XT1700i, manufactured by ASML, NA: 1.20, C-Quad, external σ: 0.981, internal σ: 0.895, XY deflection) using an ArF excimer laser immersion scanner (XT1700i) A halftone mask exposure with a line width of 48 nm and a space ratio of 1:1. Ultrapure water was used as the liquid immersion liquid. Thereafter, the wafer was heated at 100 ° C for 60 seconds, immersed in a tetramethylammonium hydroxide aqueous solution (2.38 mass %) for development for 30 seconds, and then immersed in pure water for washing, and then rotated. Dry to form a pattern.

(曝光條件2:ArF乾式曝光)(實例11及實例12) (Exposure Condition 2: ArF Dry Exposure) (Example 11 and Example 12)

將有機抗反射膜ARC29A(由日產化學工業(Nissan Chemical Industries,Ltd.)製造)塗覆於12吋矽晶圓上,並於205℃下烘烤60秒以形成厚度為78奈米的抗反射膜,並將所製備之正型抗蝕劑組成物塗覆於上述12吋矽晶圓上,並於130℃烘烤60秒以形成厚度為120奈米的抗蝕劑膜。藉由使用ArF準分子雷射掃描儀(PAS5500/1100,由ASML製造,NA:0.75,偶極性,σo/σi=0.89/0.65)將所獲得之晶圓經由線寬為75奈米之線與空間比為1:1之6%的半色調遮罩曝光,接著於100℃加熱60秒、將晶圓浸置於四甲基氫氧化銨水溶液(2.38質量%)中顯影30秒、再將其以純水中清洗,接著將其旋轉乾燥以獲得抗蝕劑圖 案。 An organic anti-reflection film ARC29A (manufactured by Nissan Chemical Industries, Ltd.) was coated on a 12-inch wafer and baked at 205 ° C for 60 seconds to form an anti-reflection having a thickness of 78 nm. A film was prepared, and the prepared positive resist composition was applied onto the above 12-inch wafer and baked at 130 ° C for 60 seconds to form a resist film having a thickness of 120 nm. The obtained wafer was passed through a line having a line width of 75 nm by using an ArF excimer laser scanner (PAS5500/1100, manufactured by ASML, NA: 0.75, even polarity, σo/σi = 0.89/0.65). Exposure to a halftone mask with a spatial ratio of 1:1, followed by heating at 100 ° C for 60 seconds, immersing the wafer in tetramethylammonium hydroxide aqueous solution (2.38 mass%) for 30 seconds, and then Wash in pure water, then spin dry to obtain a resist pattern case.

(曝光靈敏度的評價) (Evaluation of exposure sensitivity)

將用於解析線曝光條件1中之線寬為48奈米之線與空間遮罩圖案、以及曝光條件2中之線寬為75奈米之線與空間遮罩圖案的曝光劑量作為優選曝光劑量,並將其使用為曝光靈敏度。越小的值表示越高的性能。 The exposure dose for the line and space mask pattern having a line width of 48 nm in line exposure condition 1 and a line width of 75 nm in exposure condition 2 as the preferred exposure dose And use it as exposure sensitivity. Smaller values indicate higher performance.

(顯影缺陷的評價) (Evaluation of development defects)

使用由科磊儀器公司(KLA Tencor Ltd.)製造的缺陷檢測儀KLA 2360(商品名),並將缺陷檢測儀的像素尺寸設定為0.16微米,且將閥值設定為20來進行隨機模式的量測。偵測由參考影像曡加像素單元所製造的差異中所萃取出的顯影缺陷,並電子計算每單位區域(1平方公分)中的顯影缺陷數。越小的值表代越高的性能。 A defect detector KLA 2360 (trade name) manufactured by KLA Tencor Ltd. was used, and the pixel size of the defect detector was set to 0.16 μm, and the threshold was set to 20 to perform the amount of the random mode. Measurement. The development defect extracted from the difference made by the reference image plus the pixel unit is detected, and the number of development defects per unit area (1 square centimeter) is calculated electronically. The smaller the value of the table, the higher the performance.

表中的簡寫代表以上或下列具體實例中所繪示者。 The abbreviations in the table represent those shown above or in the specific examples below.

[化合物(A)] [Compound (A)]

[其他的酸產生劑] [Other acid generators]

[樹脂(B)] [Resin (B)]

在下列樹脂a至樹脂f中,重複單元的組成比為莫耳比。 In the following resin a to resin f, the composition ratio of the repeating unit is a molar ratio.

[鹼性化合物] [alkaline compound]

DIA:2,6-二異丙基苯胺 DIA: 2,6-diisopropylaniline

TEA:三乙醇胺 TEA: Triethanolamine

DBA:N,N-二丁基苯胺 DBA: N,N-dibutylaniline

PBI:2-苯基苯并咪唑 PBI: 2-phenylbenzimidazole

PEA:N-苯基二乙醇胺 PEA: N-phenyldiethanolamine

[具有能夠藉由酸的作用而脫離的基團的低分子化合物(D)(化合物(D))] [Low Molecular Compound (D) (Compound (D)) having a group capable of being detached by the action of an acid]

[界面活性劑] [Surfactant]

W-1:Megafac F176(大日本油墨化學工業(股)製造)(含氟) W-1: Megafac F176 (manufactured by Dainippon Ink Chemical Industry Co., Ltd.) (fluorine-containing)

W-2:Megafac R08(大日本油墨化學工業(股)製造)(含氟及含矽) W-2: Megafac R08 (manufactured by Dainippon Ink Chemical Industry Co., Ltd.) (fluorine-containing and antimony containing)

W-3:PF6320(OMNOVA公司製造)(含氟) W-3: PF6320 (manufactured by OMNOVA) (fluorine-containing)

W-4:Troysol S-366(Troy Chemical製造) W-4: Troysol S-366 (manufactured by Troy Chemical)

[溶劑] [solvent]

A1:丙二醇單甲醚乙酸酯(PGMEA) A1: Propylene glycol monomethyl ether acetate (PGMEA)

A2:環己酮 A2: cyclohexanone

A3:γ-丁內酯 A3: γ-butyrolactone

B1:丙二醇單甲醚(PGME) B1: Propylene glycol monomethyl ether (PGME)

B2:乳酸乙酯 B2: ethyl lactate

由表2中的結果明顯看出,在使用具有一個鋶結構的酸產生劑的對照例1、以及使用具有兩個鋶結構但不滿足式(I)的對照例2之兩者中,曝光靈敏度是低的(優選曝光劑量是大的),且顯影缺陷數是多的。 As is apparent from the results in Table 2, exposure sensitivity was used in Comparative Example 1 using an acid generator having one fluorene structure, and Comparative Example 2 having two fluorene structures but not satisfying Formula (I) It is low (preferably the exposure dose is large), and the number of development defects is large.

另一方面,在使用由式(I)所代表的化合物(A)作為酸產生劑的實例1至實例23中,曝光靈敏度是高的(優選曝光劑量是小的)且顯影缺陷數是少的。 On the other hand, in Examples 1 to 23 using the compound (A) represented by the formula (I) as the acid generator, the exposure sensitivity is high (preferably, the exposure amount is small) and the number of development defects is small. .

工業可應用性 Industrial applicability

根據感光化射線性或感放射線性樹脂組成物、以及分別使用此組成物的抗蝕劑膜及圖案形成方法,確保了優異高的曝光靈敏度及少的顯影缺陷。可以適當地使用本發明的感光化射線性或感放射線性樹脂組成物於例如ArF液浸曝光製程中。 According to the sensitizing ray-sensitive or radiation-sensitive resin composition and the resist film and pattern forming method using the composition, excellent excellent exposure sensitivity and low development defects are ensured. The photosensitive ray-sensitive or radiation-sensitive resin composition of the present invention can be suitably used in, for example, an ArF immersion exposure process.

又,本發明的圖案形成方法可以提供電子元件的製造方法、以及藉由此製造方法所製造的電子元件。 Moreover, the pattern forming method of the present invention can provide a method of manufacturing an electronic component and an electronic component manufactured by the manufacturing method.

本申請案基於2011年7月11日所申請之日本專利申請案第JP 2011-153233號,其全部的內容以引用方式併入本文中,如同詳細閘述一般。 The present application is based on Japanese Patent Application No. JP 2011-153233, filed on Jul. 2011, the entire content of which is hereby incorporated by reference.

Claims (12)

一種感光化射線性或感放射線性樹脂組成物,包括:化合物(A),其由下式(I)代表;以及樹脂(B): 其中X代表氧原子、硫原子或-N(Rx)-;R1至R8及RX各獨立代表氫原子、烷基、環烷基、烷氧基、烷氧基羰基、醯基、烷基羰氧基、芳基、芳氧基、芳氧基羰基或芳基羰氧基;以及R1至R8可彼此結合以形成環;其限制條件為至少兩個由R1至R8中選出的成員代表由下式(II)代表的結構: 其中當X為氧原子或硫原子時,R9及R10各獨立代表 烷基、環烷基或芳基;當X為-N(Rx)-時,R9及R10各獨立代表烷基或環烷基;且各R9及各R10可分別相同於或不同於每個其他的R9及每個其他的R10;R9及R10可彼此結合以形成環;以及Z-代表非親核性陰離子,各Z-可相同於或不同於每個其他的Z-,且多個Z-可結合以形成多價的非親核性陰離子。 A photosensitive ray-sensitive or radiation-sensitive resin composition comprising: a compound (A) represented by the following formula (I); and a resin (B): Wherein X represents an oxygen atom, a sulfur atom or -N(Rx)-; R 1 to R 8 and R X each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an alkoxy group, an alkoxycarbonyl group, a decyl group or an alkane group. a carbonyloxy group, an aryl group, an aryloxy group, an aryloxycarbonyl group or an arylcarbonyloxy group; and R 1 to R 8 may be bonded to each other to form a ring; the limitation is that at least two are from R 1 to R 8 The selected members represent the structure represented by the following formula (II): Wherein when X is an oxygen atom or a sulfur atom, R 9 and R 10 each independently represent an alkyl group, a cycloalkyl group or an aryl group; when X is -N(Rx)-, R 9 and R 10 each independently represent an alkyl group. Or a cycloalkyl group; and each R 9 and each R 10 may be the same or different from each other R 9 and each other R 10 ; R 9 and R 10 may be bonded to each other to form a ring; and Z - represents non-nucleophilic anion, each of Z - may be the same or different from every other Z -, and a plurality of Z - can be combined to form a multi-valent non-nucleophilic anion. 如申請專利範圍第1項所述之感光化射線性或感放射線性樹脂組成物,其中式(II)中的Z-為磺酸根陰離子。 The photosensitive ray-sensitive or radiation-sensitive resin composition according to claim 1, wherein Z - in the formula (II) is a sulfonate anion. 如申請專利範圍第2項所述之感光化射線性或感放射線性樹脂組成物,其中式(II)中的Z-是由下式(III)表示的陰離子: 其中各Xf獨立代表氟原子或經至少一個氟原子取代的烷基;R11及R12各獨立代表氫原子、氟原子、烷基或經至少一個氟原子取代的烷基,且當多個R11及多個R12存在時,各R11及各R12可分別相同於或不同於每個其他的R11及每個其他的R12;L代表二價連結基,且當多個L存在時,各L可相同於或不同於每個其他的L; A代表環狀有機基;以及x代表1至20的整數,y代表0至10的整數及z代表0至10的整數。 The sensitizing ray-sensitive or radiation-sensitive resin composition according to claim 2, wherein Z - in the formula (II) is an anion represented by the following formula (III): Wherein each Xf independently represents a fluorine atom or an alkyl group substituted with at least one fluorine atom; and R 11 and R 12 each independently represent a hydrogen atom, a fluorine atom, an alkyl group or an alkyl group substituted with at least one fluorine atom, and when a plurality of R When 11 and a plurality of R 12 are present, each R 11 and each R 12 may be the same as or different from each of the other R 11 and each of the other R 12 ; L represents a divalent linking group, and when a plurality of L exist Each L may be the same as or different from each other L; A represents a cyclic organic group; and x represents an integer of 1 to 20, y represents an integer of 0 to 10, and z represents an integer of 0 to 10. 如申請專利範圍第1項所述之感光化射線性或感放射線性樹脂組成物,其中式(II)中的R9及R10各自獨立,為烷基或環烷基,且R9及R10可彼此結合以形成環。 The photosensitive ray-sensitive or radiation-sensitive resin composition according to claim 1, wherein R 9 and R 10 in the formula (II) are each independently an alkyl group or a cycloalkyl group, and R 9 and R are the same. 10 may be combined with each other to form a loop. 如申請專利範圍第1項所述之感光化射線性或感放射線性樹脂組成物,其中式(II)中的R9及R10結合以形成環。 The photosensitive ray-sensitive or radiation-sensitive resin composition according to claim 1, wherein R 9 and R 10 in the formula (II) are combined to form a ring. 如申請專利範圍第1項所述之感光化射線性或感放射線性樹脂組成物,其中X代表-N(Rx)-,式(I)中的Rx為各自具有由式(II)代表之結構作為取代基之烷基、環烷基或芳基,且至少一個由R1至R8中選出的成員為式(II)代表之結構。 The photosensitive ray-sensitive or radiation-sensitive resin composition as described in claim 1, wherein X represents -N(Rx)-, and Rx in the formula (I) each has a structure represented by the formula (II) The alkyl group, the cycloalkyl group or the aryl group as a substituent, and at least one member selected from R 1 to R 8 is a structure represented by the formula (II). 如申請專利範圍第1項所述之感光化射線性或感放射線性樹脂組成物,其中所述樹脂(B)為能夠藉由酸的作用而分解以增加所述樹脂(B)在鹼性顯影液中之溶解性的樹脂。 The photosensitive ray-sensitive or radiation-sensitive resin composition according to claim 1, wherein the resin (B) is decomposable by an action of an acid to increase the alkali development of the resin (B). A soluble resin in the liquid. 一種抗蝕性膜,其藉由使用如申請專利範圍第1項至第7項之任一者中所述之感光化射線性或感放射線性樹脂組成物而形成。 A resist film formed by using a photosensitive ray-sensitive or radiation-sensitive resin composition as described in any one of claims 1 to 7. 一種圖案形成方法,包括:將如申請專利範圍第8項所述之抗蝕劑膜曝光,藉此 形成經曝光的抗蝕劑膜的步驟;以及將所述經曝光的抗蝕劑膜顯影的步驟。 A pattern forming method comprising: exposing a resist film as described in claim 8 of the patent application a step of forming an exposed resist film; and a step of developing the exposed resist film. 如申請專利範圍第9項所述之圖案形成方法,其中所述曝光的方法為液浸曝光。 The pattern forming method according to claim 9, wherein the exposure method is liquid immersion exposure. 一種電子元件的製造方法,包括:如申請專利範圍第9項所述之圖案形成方法。 A method of manufacturing an electronic component, comprising: the pattern forming method according to claim 9 of the patent application. 一種電子元件,其以如申請專利範圍第11項所述之電子元件的製造方法製造。 An electronic component manufactured by the method of manufacturing an electronic component according to claim 11 of the patent application.
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* Cited by examiner, † Cited by third party
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Families Citing this family (7)

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JP5772727B2 (en) * 2012-05-31 2015-09-02 信越化学工業株式会社 Resist composition and pattern forming method
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* Cited by examiner, † Cited by third party
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JP4533799B2 (en) * 2005-05-31 2010-09-01 東洋インキ製造株式会社 Photosensitive coloring composition and color filter
JP2009280535A (en) * 2008-05-23 2009-12-03 Nippon Carbide Ind Co Inc New photoacid generator and resist material containing the same
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* Cited by examiner, † Cited by third party
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US10761251B2 (en) 2015-09-30 2020-09-01 Fujifilm Corporation Resin film, coloring photosensitive composition, resin film production method, color filter, light shielding film, solid-state imaging element, and image display device

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