TW201305389A - Method for producing indium hydroxide or compound containing indium hydroxide - Google Patents

Method for producing indium hydroxide or compound containing indium hydroxide Download PDF

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TW201305389A
TW201305389A TW101121714A TW101121714A TW201305389A TW 201305389 A TW201305389 A TW 201305389A TW 101121714 A TW101121714 A TW 101121714A TW 101121714 A TW101121714 A TW 101121714A TW 201305389 A TW201305389 A TW 201305389A
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indium hydroxide
indium
plate
electrolysis
anode
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TW101121714A
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TWI537423B (en
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Yuichiro Shindo
Kouichi Takemoto
Mitsuyuki Konaka
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Jx Nippon Mining & Metals Corp
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Priority claimed from JP2011171893A external-priority patent/JP5632340B2/en
Priority claimed from JP2011174662A external-priority patent/JP5557810B2/en
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25BELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B11/00Electrodes; Manufacture thereof not otherwise provided for
    • C25B11/04Electrodes; Manufacture thereof not otherwise provided for characterised by the material
    • C25B11/051Electrodes formed of electrocatalysts on a substrate or carrier
    • C25B11/055Electrodes formed of electrocatalysts on a substrate or carrier characterised by the substrate or carrier material
    • C25B11/057Electrodes formed of electrocatalysts on a substrate or carrier characterised by the substrate or carrier material consisting of a single element or compound
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25BELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B1/00Electrolytic production of inorganic compounds or non-metals
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25BELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B15/00Operating or servicing cells
    • C25B15/08Supplying or removing reactants or electrolytes; Regeneration of electrolytes
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02Anodisation
    • C25D11/34Anodisation of metals or alloys not provided for in groups C25D11/04 - C25D11/32

Abstract

A method for producing indium hydroxide or a compound containing indium hydroxide by electrolysis. The purpose of this method is to suppress deterioration of the productivity and deterioration of the quality by performing electrolysis, while setting the electrical conductivity of the electrolyte solution at 10 mS/cm or more, so that indium hydroxide or a compound containing indium hydroxide is precipitated in the electrolyte solution, and then cleaning the thus-precipitated indium hydroxide or compound containing indium hydroxide until the electrical conductivity of the cleaning liquid becomes 1 mS/cm or less.

Description

氫氧化銦或含有氫氧化銦之化合物的製造方法 Method for producing indium hydroxide or compound containing indium hydroxide

該發明關於一種主要於製造形成ITO膜之濺鍍用ITO靶時所使用的作為氧化銦、或含有氧化銦之化合物之粉末之原料的氫氧化銦、或含有氫氧化銦之化合物之製造方法。 This invention relates to a method for producing indium hydroxide or a compound containing indium hydroxide which is a raw material of a powder of indium oxide or a compound containing indium oxide which is mainly used in the production of an ITO target for sputtering of an ITO film.

ITO(以銦-錫作為主成分之複合氧化物)膜被廣泛使用作為以液晶顯示器為中心之顯示裝置之透明電極(膜)。形成該ITO膜之方法,普遍係藉由真空蒸鍍法或濺鍍法等通常稱為物理蒸鍍法之方法來形成。尤其,就操作性或膜之穩定性而言,較常使用磁控濺鍍法形成。 A film of ITO (composite oxide containing indium-tin as a main component) is widely used as a transparent electrode (film) of a display device centered on a liquid crystal display. The method of forming the ITO film is generally formed by a method generally called a physical vapor deposition method such as a vacuum deposition method or a sputtering method. In particular, in terms of workability or stability of the film, it is more often formed by magnetron sputtering.

利用濺鍍法形成膜時,係藉由如下方法進行:使Ar離子等正離子物理性碰撞設置於陰極之靶,利用該碰撞能量釋放出構成靶之材料,而將與靶材料為大致相同組成的膜積層於對面之陽極側之基板。 When a film is formed by a sputtering method, a positive ion such as Ar ion is physically collided with a target placed on a cathode, and a material constituting the target is released by the collision energy, and the composition is substantially the same as the target material. The film is laminated on the opposite side of the substrate on the anode side.

利用濺鍍法之被覆法之特徵在於,可藉由調節處理時間或供給電力等,而以穩定之成膜速度自埃單位之較薄之膜形成至數十μm之較厚之膜。 The coating method by the sputtering method is characterized in that a film having a thickness of several tens of μm can be formed from a thin film of an angstrom unit at a stable film forming speed by adjusting a processing time or supplying electric power or the like.

一般,ITO燒結體靶係藉由將氧化銦與氧化錫粉碎混合,使獲得之混合粉成形並進行燒結而製造。於使氧化銦與氧化錫粉碎混合時,藉由球磨機、V型混合機或帶型混合機進行乾式或濕式混合。 In general, an ITO sintered body target is produced by pulverizing and mixing indium oxide and tin oxide, and molding the obtained mixed powder and sintering it. When the indium oxide and the tin oxide are pulverized and mixed, dry or wet mixing is carried out by a ball mill, a V-type mixer or a belt mixer.

作為ITO燒結體靶之原料的氧化銦粉末可藉由對氫氧化銦進行預燒而製造。製造該氫氧化銦之方法的代表性公 知技術於專利文獻1中有所揭示。該專利文獻1之方法藉由以銦作為陽極進行電解而製造氫氧化銦,對該氫氧化銦進行預燒而獲得氧化銦粉末。再者,該專利文獻1因更名而引起申請人名不同,但為本申請人之申請案。 Indium oxide powder which is a raw material of the ITO sintered body target can be produced by calcining indium hydroxide. Representative of the method for producing the indium hydroxide The technique is disclosed in Patent Document 1. In the method of Patent Document 1, indium hydroxide is produced by electrolysis using indium as an anode, and the indium hydroxide is calcined to obtain an indium oxide powder. Furthermore, this patent document 1 has a different name for the applicant due to the change of name, but it is the applicant's application.

作為氧化銦之製造方法,亦可考慮中和法。然而,亦如專利文獻1所記載,因存在如下問題,故電解法較為有效。 As a method of producing indium oxide, a neutralization method can also be considered. However, as described in Patent Document 1, the electrolysis method is effective because of the following problems.

a)獲得之氧化銦粉末之諸特性(平均粒徑、視密度等)之差異較大,此成為氧化銦系之顯示材料、螢光體等之「品質差異之降低」或「高品質化」之阻礙要因。 a) The difference in the characteristics (average particle diameter, apparent density, etc.) of the obtained indium oxide powder is large, and this is a "deterioration of quality difference" or "high quality" of an indium oxide-based display material, a phosphor, or the like. The obstacles are the cause.

b)未必可容易地固定控制製造條件(液溫、反應速度等),為了使之穩定而會導致設備成本上升。 b) It is not always possible to easily control the manufacturing conditions (liquid temperature, reaction speed, etc.), and in order to stabilize it, the equipment cost may increase.

c)於要求特性與先前不同之粉末之情形時,無法靈活應對該要求。 c) When it is required to have a different characteristic from the previous one, it is not possible to respond flexibly to this requirement.

d)裝置之規模變得相對較大,因此若欲固定地控制製造條件,則需要相當大之勞力,而且可以說未必可容易地應付增產。 d) The scale of the device becomes relatively large, so if the manufacturing conditions are to be fixedly controlled, considerable labor is required, and it can be said that the increase may not be easily dealt with.

e)因中和廢液(例如硝酸銨)隨時產生,故必需進行處理,此會提高運轉成本。 e) Because the neutralizing waste liquid (such as ammonium nitrate) is generated at any time, it must be treated, which will increase the running cost.

其次,揭示藉由電解製造氫氧化銦之代表例。 Next, a representative example of producing indium hydroxide by electrolysis is disclosed.

於硝酸銨(NH4NO3)、濃度:0.2~5mol/L、pH值:4~10、溫度:10~50℃之水溶液中,以銦作為陽極(anode),以電流密度100~1800A/m2通電而進行電解。繼而,對電解槽底之沈積物進行過濾、清洗及乾燥,獲得氫氧化銦。 In the aqueous solution of ammonium nitrate (NH 4 NO 3 ), concentration: 0.2~5mol/L, pH: 4~10, temperature: 10~50°C, indium is used as anode (anode), current density is 100~1800A/ The m 2 is energized to perform electrolysis. Then, the deposit at the bottom of the electrolytic cell is filtered, washed and dried to obtain indium hydroxide.

於以該氫氧化銦作為原料製造氧化銦之情形時,只要於1100℃左右之溫度進行焙燒即可。藉此,可獲得平均粒徑1~5μm之氧化銦粉末。 When indium oxide is produced using the indium hydroxide as a raw material, it may be calcined at a temperature of about 1,100 °C. Thereby, an indium oxide powder having an average particle diameter of 1 to 5 μm can be obtained.

於上述之氫氧化銦之電解時,在電解槽中配置銦板作為陽極(anode),於陰極(cathode)配置通常之不鏽鋼板,使電解液流動於其間進行電解。然而,於陽極之表面附著有所生成之氫氧化銦,於陰極之表面電沈積有銦,且以樹枝(樹枝狀結晶)狀延伸,導致陽極及陰極短路,從而產生無法長時間電解之問題。 In the electrolysis of the above-described indium hydroxide, an indium plate is placed in the electrolytic cell as an anode, and a normal stainless steel plate is placed on the cathode, and the electrolytic solution is allowed to flow therebetween for electrolysis. However, indium hydroxide formed on the surface of the anode is deposited on the surface of the cathode, and is in the form of branches (dendritic crystals), which causes a short circuit between the anode and the cathode, thereby causing a problem that electrolysis cannot be performed for a long time.

又,若連續實施電解,則溶出電位高於In之元素會形成雜質而殘留於陽極表面,結果會產生於表面濃縮之問題。若於此種狀況下繼續電解,則雜質亦會混入電解液中,導致之前所析出之氫氧化銦之純度變差。又,於陽極表面,銦金屬局部性地消失,陽極表面之電流密度變得不均勻。其結果為,亦產生如下之異常:於陽極表面局部性地產生孔,陽極本身脫落於浴中。 Further, when electrolysis is continuously performed, an element having a higher elution potential than In forms impurities and remains on the surface of the anode, resulting in a problem of surface concentration. If electrolysis is continued under such conditions, impurities are also mixed into the electrolyte, resulting in deterioration of the purity of the previously precipitated indium hydroxide. Further, on the surface of the anode, indium metal partially disappears, and the current density on the surface of the anode becomes uneven. As a result, an abnormality is also generated in which pores are locally generated on the surface of the anode, and the anode itself is detached from the bath.

進而,於氫氧化銦之電解時,產生如下之問題:於陽極之表面附著有所生成之氫氧化銦,於陰極之表面電沈積有銦,且以樹枝(樹枝狀結晶)狀延伸,導致陽極及陰極短路。 Further, in the electrolysis of indium hydroxide, the following problems occur: the indium hydroxide formed on the surface of the anode is deposited, indium is deposited on the surface of the cathode, and branches are formed in the form of branches (dendrites), resulting in an anode. And the cathode is shorted.

若調查先前技術,則揭示有如下所述之專利文獻。 If the prior art is investigated, the patent documents described below are disclosed.

專利文獻2為氧化銦粉末之製造方法,且係以銦作為陽極,攪拌至使氫氧化銦之沈澱懸浮於電解液中之狀態而進行電解者。具體而言,於不進行攪拌之情形時,電解槽 之液面附近之pH值為8.5左右,槽底附近之pH值為3.2左右,藉由攪拌電解液,液面附近與槽底附近之電解液得以混合,pH值變得均勻化。 Patent Document 2 is a method for producing an indium oxide powder, and is performed by using indium as an anode and stirring until a precipitate of indium hydroxide is suspended in an electrolytic solution. Specifically, the electrolytic cell is not stirred. The pH near the liquid surface is about 8.5, and the pH near the bottom of the tank is about 3.2. By stirring the electrolyte, the electrolyte near the liquid surface and the bottom of the tank are mixed, and the pH becomes uniform.

攪拌程度係使藉由電解所產生之氫氧化銦之沈澱成為懸浮於電解液中之狀態。藉此,若攪拌之程度較弱,則使電解液之pH值均勻化之效果變得不充分。於通常之電解中,普遍係使電解液成為靜流狀態而進行,未進行如使槽底之黏質浮起之攪拌,但本發明之電解步驟之特徵在於積極地攪拌電解液直至沈澱為懸浮之程度而進行電解。 The degree of agitation is such that the precipitation of indium hydroxide produced by electrolysis is suspended in the electrolyte. Therefore, if the degree of agitation is weak, the effect of homogenizing the pH of the electrolytic solution is insufficient. In the usual electrolysis, it is common to carry out the electrolyte in a static flow state, and the agitation such as lifting the viscosity of the groove bottom is not performed, but the electrolysis step of the present invention is characterized in that the electrolyte is actively stirred until the precipitate is suspended. Electrolysis is carried out to the extent that it is.

電解液之液溫為40~80℃(50~70℃),使用硝酸銨或氯化銨作為電解液。電解液中之試劑濃度1~3mol/L,電壓2~4V,電流密度200~900A/m2(700A/m2左右),極間25m/m~50m/m,陰極之材質可為碳,通常係使用銦板。預燒通常設為於空氣中且700~1100℃(800~950℃左右)。 The liquid temperature of the electrolyte is 40 to 80 ° C (50 to 70 ° C), and ammonium nitrate or ammonium chloride is used as the electrolyte. The concentration of the reagent in the electrolyte is 1~3mol/L, the voltage is 2~4V, the current density is 200~900A/m 2 (about 700A/m 2 ), the pole is 25m/m~50m/m, and the material of the cathode can be carbon. Indium plates are usually used. The calcination is usually set in the air at 700 to 1100 ° C (about 800 to 950 ° C).

於專利文獻3中記載有氧化銦-氧化錫粉末之製造方法,且揭示有將銦及錫作為不同的陽極同時電解(PR式脈衝通電)之技術。揭示有電解液係使用NH4NO3,以濃度0.2~5mol/L、pH值4~9.5、浴溫0~50℃、電流密度100~1800A/m2進行電解之技術。將藉此獲得之粉末於1100℃焙燒,製造平均粒徑20μm、視密度1.7g/cm3之ITO粉末。獲得含有SnO2之比率10wt%、燒結體密度6.70g/cm3或4.78g/cm3之ITO靶材。 Patent Document 3 describes a method for producing an indium oxide-tin oxide powder, and discloses a technique in which indium and tin are simultaneously electrolyzed as different anodes (PR type pulse energization). It is disclosed that an electrolytic solution is used for electrolysis using NH 4 NO 3 at a concentration of 0.2 to 5 mol/L, a pH of 4 to 9.5, a bath temperature of 0 to 50 ° C, and a current density of 100 to 1800 A/m 2 . The powder thus obtained was calcined at 1,100 ° C to produce an ITO powder having an average particle diameter of 20 μm and an apparent density of 1.7 g/cm 3 . An ITO target containing a ratio of SnO 2 of 10% by weight, a sintered body density of 6.70 g/cm 3 or 4.78 g/cm 3 was obtained.

於專利文獻4中,作為ITO靶材之製造方法,揭示有 藉由電解法製造氫氧化銦之方法。具體而言,係對藉由將銦作為陽極進行電解而產生之氫氧化銦進行清洗並使其分散於純水中的方法。記載有如下內容:作為電解液之硝酸銨雖在成本及維持純度之方面較佳,但因於電極表面析出絕緣體即偏錫酸,故無法連續地進行電解。記載有如下內容:使用分散有氫氧化銦之粒子徑10μm以下、10~80wt%之氫氧化銦之分散溶液,混合有氫氧化銦分散溶液與偏錫酸分散溶液之漿料之pH值成為5以上且9以下。 Patent Document 4 discloses a method for producing an ITO target. A method of producing indium hydroxide by electrolysis. Specifically, it is a method of washing and dispersing indium hydroxide produced by electrolysis of indium as an anode in pure water. It is described that ammonium nitrate as the electrolytic solution is preferable in terms of cost and purity, but since the surface of the electrode is deposited as an insulator, that is, metastannic acid, electrolysis cannot be continuously performed. The content of the slurry in which the indium hydroxide dispersion solution and the metastannic acid dispersion solution are mixed is 5, using a dispersion solution in which indium hydroxide is dispersed in an indium hydroxide having a particle diameter of 10 μm or less and 10 to 80% by weight. Above and below 9.

於專利文獻5中記載有使電解煉製中之電解液之濃度均質化之方法及電解槽,且揭示有如下方法:於電解槽之端部配置有供液袋,當自該供液袋對陽極板及陰極板供液之時,供液袋上下均具有開口部,自上部開口部供液,自下部開口部供給新電解液,並且於該供液袋之上側之側面設置有孔部,亦可自該孔向陽極板及陰極板供液,藉此使電解液之濃度均勻化。此情形時,對陽極板及陰極板於垂直方向進行供液。 Patent Document 5 describes a method of homogenizing the concentration of the electrolytic solution in electrolytic refining and an electrolytic cell, and discloses a method in which a liquid supply bag is disposed at an end portion of the electrolytic cell, and the liquid supply bag is disposed from the liquid supply bag. When the anode plate and the cathode plate are supplied with liquid, the liquid supply bag has an opening at the upper and lower sides, and the liquid is supplied from the upper opening, the new electrolyte is supplied from the lower opening, and the hole is provided on the side of the upper side of the liquid supply bag. Liquid can also be supplied to the anode plate and the cathode plate from the holes, thereby uniformizing the concentration of the electrolyte. In this case, the anode plate and the cathode plate are supplied in a vertical direction.

於專利文獻6中揭示有電解精製或電解提煉用電解槽,記載有如下結構之電解槽:於供液側內壁設置有多個供液孔,於排液側內壁設置有同樣多個排液孔,而使液流於陽極與陰極之間直行。 Patent Document 6 discloses an electrolytic cell for electrolytic refining or electrolytic refining, and an electrolytic cell having a structure in which a plurality of liquid supply holes are provided on the inner wall of the liquid supply side and a plurality of rows on the inner wall of the liquid discharge side are provided. The liquid holes are allowed to flow straight between the anode and the cathode.

於以上之公知文獻中,未規定電解液中之導電度,且完全未了解到電流效率惡化之問題、及其後之步驟(析出之氫氧化銦等之清洗)會對燒結時之密度造成影響,且亦未揭示用以解決此問題之具體方法。 In the above-mentioned well-known literature, the conductivity in the electrolytic solution is not specified, and the problem of deterioration of current efficiency is not known at all, and the subsequent steps (cleaning of precipitated indium hydroxide or the like) affect the density at the time of sintering. And no specific method for solving this problem has been disclosed.

又,完全未揭示如下之了解:於氫氧化銦之電解時雜質濃縮於陽極之表面、陽極脫落之問題,及,電解液中生成除氫氧化銦以外之雜質含量高之氫氧化物而使氫氧化銦之純度降低,且亦未揭示用以解決此問題之具體方法。 Moreover, the following understanding is not disclosed at all: in the electrolysis of indium hydroxide, impurities are concentrated on the surface of the anode, the anode is detached, and a hydroxide having a high impurity content other than indium hydroxide is formed in the electrolyte to cause hydrogen. The purity of indium oxide is reduced, and no specific method for solving this problem has been disclosed.

又,於以上之公知文獻中,完全未揭示如下之了解:於氫氧化銦之電解時陽極之表面附著有所生成之氫氧化銦,及,於陰極之表面電沈積有銦且以樹枝(樹枝狀結晶)狀延伸而產生陽極及陰極短路之問題,且亦未揭示用以解決此問題之具體方法。 Moreover, in the above-mentioned well-known literature, the following understanding is not disclosed at all: in the electrolysis of indium hydroxide, the surface of the anode is adhered to the formed indium hydroxide, and the surface of the cathode is electrodeposited with indium and branches (twigs) The shape of the crystal extends to cause a short circuit between the anode and the cathode, and a specific method for solving the problem is not disclosed.

專利文獻1:日本專利第2829556號公報 Patent Document 1: Japanese Patent No. 2829556

專利文獻2:日本特開平10-204669號公報 Patent Document 2: Japanese Patent Laid-Open No. Hei 10-204669

專利文獻3:日本專利第2736492號公報 Patent Document 3: Japanese Patent No. 2736492

專利文獻4:日本特開2001-303239號公報 Patent Document 4: Japanese Laid-Open Patent Publication No. 2001-303239

專利文獻5:日本特開2007-204779號公報 Patent Document 5: Japanese Laid-Open Patent Publication No. 2007-204779

專利文獻6:日本實開平3-89166號公報 Patent Document 6: Japanese Unexamined Patent Publication No. 3-89166

本發明之目的在於解決當藉由電解製造氫氧化銦或含有氫氧化銦之化合物之情形時所產生之問題,即產生電流效率極其差、進而於燒結時燒結特性變差且密度不上升之情形。以此,抑制生產性之降低或品質之降低。 The object of the present invention is to solve the problem that when indium hydroxide or a compound containing indium hydroxide is produced by electrolysis, that is, a case where the current efficiency is extremely poor, and the sintering property is deteriorated at the time of sintering, and the density does not rise. . Thereby, the decrease in productivity or the decrease in quality is suppressed.

又,本發明之目的在於查明如下問題之原因,並且提出用以解決其之具體方策,從而抑制生產性之降低或品質之降低,該問題為:於電解槽中配置作為陽極(anode)之銦板及陰極(cathode)板,使電解液流動於其間而進行電 解時,形成於陽極之表面之氧化層及雜質濃縮於該氧化層;陽極本身自中途脫落;生成除氫氧化銦以外之雜質含量較高之氫氧化銦,氫氧化銦之純度降低。 Further, the object of the present invention is to ascertain the cause of the following problems, and to propose a specific method for solving the same, thereby suppressing a decrease in productivity or a decrease in quality, which is disposed in an electrolytic cell as an anode. Indium plate and cathode plate, allowing electrolyte to flow between them for electricity When the solution is formed, the oxide layer and impurities formed on the surface of the anode are concentrated on the oxide layer; the anode itself is detached from the middle; and indium hydroxide having a high impurity content other than indium hydroxide is formed, and the purity of the indium hydroxide is lowered.

進而,本發明之目的在於查明藉由電解製造氫氧化銦或含有氫氧化銦之化合物之情形時所產生之問題的原因,並且提出用以解決此等問題之具體對策,從而抑制生產性之降低或品質之降低,該問題為:於電解槽中配置作為陽極(anode)之銦或銦合金板及陰極(cathode)板,使電解液流動於其間而進行電解時,於陽極之表面附著有所生成之氫氧化銦或含有氫氧化銦之化合物,於陰極之表面電沈積有銦或銦合金,且以樹枝(樹枝狀結晶)狀延伸,導致陽極及陰極短路。 Further, the object of the present invention is to ascertain the cause of problems caused by the production of indium hydroxide or a compound containing indium hydroxide by electrolysis, and to propose a specific countermeasure for solving such problems, thereby suppressing productivity. The problem of lowering or lowering the quality is to arrange an indium or an indium alloy plate and a cathode plate as an anode in the electrolytic cell, and to carry out electrolysis while flowing the electrolyte therebetween, and attaching to the surface of the anode. The formed indium hydroxide or the compound containing indium hydroxide is electrodeposited on the surface of the cathode with indium or an indium alloy, and extends in the form of branches (dendritic crystals), resulting in short circuit of the anode and the cathode.

本發明係為解決上述問題而提供以下之方法者。 The present invention provides the following methods for solving the above problems.

1)一種藉由電解進行之氫氧化銦或含有氫氧化銦之化合物的製造方法,其係藉由電解而製造氫氧化銦或含有氫氧化銦之化合物的方法,其特徵在於:將電解液之導電度設為10mS/cm以上進行電解,使氫氧化銦或含有氫氧化銦之化合物於電解液中析出,進而對析出之氫氧化銦或含有氫氧化銦之化合物進行清洗直至該清洗液之導電度成為1mS/cm以下。 1) A method for producing an indium hydroxide or a compound containing indium hydroxide by electrolysis, which is a method for producing an indium hydroxide or a compound containing indium hydroxide by electrolysis, characterized in that an electrolytic solution is used Electrolysis is performed at a conductivity of 10 mS/cm or more, and indium hydroxide or a compound containing indium hydroxide is precipitated in the electrolytic solution, and the precipitated indium hydroxide or the compound containing indium hydroxide is washed until the cleaning liquid is electrically conductive. The degree is 1 mS/cm or less.

2)如上述1)之藉由電解進行之氫氧化銦或含有氫氧化銦之化合物的製造方法,其中,清洗至析出之氫氧化銦或含有氫氧化銦之化合物的清洗液之導電度成為0.1mS/cm以下。 2) A method for producing an indium hydroxide or a compound containing indium hydroxide by electrolysis as in the above 1), wherein the conductivity of the cleaning liquid which is washed to precipitated indium hydroxide or a compound containing indium hydroxide is 0.1 Below mS/cm.

又,本發明係為解決上述問題而提供以下之方法者。 Further, the present invention provides the following methods for solving the above problems.

3)一種藉由電解進行之氫氧化銦粉末的製造方法,其係於電解槽中將陰極板與作為原料之銦金屬的陽極板隔有間隔而交替地排列,朝該陰極板與陽極板之間供給電解液,而藉由電解製造氫氧化銦粉末的方法,其特徵在於:使電解液中析出氫氧化銦粒子,於陽極板之重量成為陽極初始重量之20%~80%之階段中止電解,取出使用完之陽極板,使該使用完之陽極板熔解並且補充新的銦金屬而加以鑄造,從而重新製作陽極板,使用該重新製作之陽極板開始電解,使氫氧化銦粒子析出至電解液中。 3) A method for producing indium hydroxide powder by electrolysis in which an anode plate is alternately arranged with an anode plate of indium metal as a raw material in an electrolytic cell, and the cathode plate and the anode plate are alternately arranged A method for producing an indium hydroxide powder by electrolysis, wherein an indium hydroxide particle is precipitated in the electrolytic solution, and the electrolysis is stopped at a stage where the weight of the anode plate becomes 20% to 80% of the initial weight of the anode. The used anode plate is taken out, the used anode plate is melted and a new indium metal is added and cast, thereby re-forming the anode plate, and the regenerated anode plate is used to start electrolysis to precipitate the indium hydroxide particles to the electrolysis. In the liquid.

4)如上述3)之藉由電解進行之氫氧化銦粉末的製造方法,其中,使用不鏽鋼板或鈦板作為陰極板進行電解。 4) A method for producing an indium hydroxide powder by electrolysis as in the above 3), wherein the electrolysis is carried out using a stainless steel plate or a titanium plate as a cathode plate.

5)如上述3)至4)中任一項之藉由電解進行之氫氧化銦粉末的製造方法,其進一步具有下述步驟:取出析出於電解液中之氫氧化銦漿料的步驟;將該漿料濃縮,分離成固形物成分濃縮液與固形物成分稀薄液的步驟;及將該固形物成分稀薄液分配至上述電解液供給噴嘴的步驟。 5) The method for producing an indium hydroxide powder by electrolysis according to any one of the above 3) to 4), further comprising the step of: taking out an indium hydroxide slurry deposited in the electrolytic solution; The slurry is concentrated to separate into a solid content component concentrate and a solid content component thin liquid; and the solid matter component thin liquid is dispensed to the electrolyte solution supply nozzle.

6)如上述5)之藉由電解進行之氫氧化銦粉末的製造方法,其具有下述步驟:對上述固形物成分濃縮液進行過濾,將該濾液分配至上述電解液供給噴嘴的步驟;及對經過濾之固形物進行乾燥製成氫氧化銦粉末的步驟。 6) The method for producing an indium hydroxide powder by electrolysis according to the above 5), comprising the steps of: filtering the solid component concentrate; and distributing the filtrate to the electrolyte supply nozzle; The step of drying the filtered solids to form an indium hydroxide powder.

又,本發明係為解決上述問題而提供以下之方法者。 Further, the present invention provides the following methods for solving the above problems.

7)一種氫氧化銦或含有氫氧化銦之化合物的電解製造裝置,其係藉由電解法而製造氫氧化銦或含有氫氧化銦之 化合物的裝置,其特徵在於:於電解槽中將陰極板與作為原料的銦或銦合金之陽極板隔有間隔地交替排列,於該陰極板與陽極板之間且為各陰極板及陽極板之間之一側緣之附近位置,配置有朝陰極板及陽極板之另一側緣供給電解液之噴嘴,使自該噴嘴之開口部流出之電解液於電解槽中之各陰極板與陽極板之間回流,使氫氧化銦或含有氫氧化銦之化合物析出至電解液中。 7) An electrolytic manufacturing apparatus for indium hydroxide or a compound containing indium hydroxide, which is produced by electrolytic method to produce indium hydroxide or contain indium hydroxide The apparatus for compounding is characterized in that a cathode plate is alternately arranged with an anode plate of indium or an indium alloy as a raw material in an electrolytic cell, and between the cathode plate and the anode plate, and each of the cathode plate and the anode plate A nozzle for supplying an electrolyte to the other side edge of the cathode plate and the anode plate is disposed at a position near one of the side edges, and the electrolyte flowing out from the opening of the nozzle is placed in each of the cathode plate and the anode in the electrolytic cell. The plates are refluxed to precipitate indium hydroxide or a compound containing indium hydroxide into the electrolyte.

8)如上述7)之氫氧化銦或含有氫氧化銦之化合物的電解製造裝置,其中,陰極板為不鏽鋼板或鈦板。 8) An electrolytic manufacturing apparatus of indium hydroxide or a compound containing indium hydroxide according to the above 7), wherein the cathode plate is a stainless steel plate or a titanium plate.

9)如上述7)或8)之氫氧化銦或含有氫氧化銦之化合物的電解製造裝置,其中,配置有1個或複數個自各陰極板與陽極板之間之一側緣向另一側緣供給電解液之噴嘴,使自該噴嘴之開口部流出之電解液於電解槽中之各陰極板與陽極板之間回流,從而使氫氧化銦或含有氫氧化銦之化合物析出至電解液中。 9) An electrolytic manufacturing apparatus of indium hydroxide or a compound containing indium hydroxide according to 7) or 8) above, wherein one or a plurality of side edges from one of the cathode plates and the anode plate are disposed to the other side The nozzle for supplying the electrolyte causes the electrolyte flowing out from the opening of the nozzle to recirculate between the cathode plates and the anode plate in the electrolytic cell, thereby causing the indium hydroxide or the compound containing indium hydroxide to be precipitated into the electrolyte. .

10)如上述7)至9)中任一項之氫氧化銦或含有氫氧化銦之化合物的電解製造裝置,其具有下述裝置:取出至電解液中電解液中之氫氧化銦或含有氫氧化銦之化合物的裝置;將該氫氧化物濃縮,分離成固形物成分濃縮液與固形物成分稀薄液的裝置;將該固形物成分稀薄液分配至上述電解液供給噴嘴的裝置。 10) An electrolytic production apparatus of indium hydroxide or a compound containing indium hydroxide according to any one of the above 7) to 9), which has an apparatus for taking out indium hydroxide or containing hydrogen in an electrolytic solution in an electrolytic solution A device for indium oxide compound; a device for concentrating the hydroxide to separate into a solid content component concentrate and a solid content component; and a device for distributing the solid component diluent to the electrolyte supply nozzle.

11)如上述7)之氫氧化銦粉末或含有氫氧化銦之化合物粉末的電解製造裝置,其具備對上述固形物成分濃縮液進行過濾,將該濾液分配至上述電解液供給噴嘴之裝置; 及對經過濾之固形物進行乾燥,製造氫氧化銦粉末或含有氫氧化銦之化合物粉末的裝置。 11) An electrolytic production apparatus of the indium hydroxide powder or the indium hydroxide-containing compound powder according to the above 7), comprising: a device that filters the solid content component concentrate and distributes the filtrate to the electrolyte supply nozzle; And drying the filtered solid matter to produce an indium hydroxide powder or a compound powder containing indium hydroxide.

12)一種藉由電解進行之氫氧化銦或含有氫氧化銦之化合物的製造方法,其係藉由電解而製造氫氧化銦或含有氫氧化銦之化合物的方法,其特徵在於:於電解槽中將陰極板與作為原料的銦或銦合金之陽極板隔有間隔地交替排列,於該陰極板與陽極板之間且為各陰極板及陽極板之一側緣之附近位置,配置朝陰極板及陽極板之另一側緣供給電解液之噴嘴,對自該噴嘴之開口部流出之電解液之液流進行調節,使其於電解槽中之各陰極板與陽極板之間回流,使氫氧化銦或含有氫氧化銦之化合物析出至電解液中。 12) A method for producing indium hydroxide or a compound containing indium hydroxide by electrolysis, which is a method for producing indium hydroxide or a compound containing indium hydroxide by electrolysis, characterized in that it is in an electrolytic cell The cathode plate is alternately arranged at intervals with the anode plate of indium or indium alloy as a raw material, and is disposed adjacent to the side edge of one of the cathode plate and the anode plate between the cathode plate and the anode plate, and is disposed toward the cathode plate And a nozzle for supplying the electrolyte to the other side edge of the anode plate, and adjusting the liquid flow of the electrolyte flowing out from the opening of the nozzle to reflux between the cathode plate and the anode plate in the electrolytic cell to make hydrogen Indium oxide or a compound containing indium hydroxide is precipitated into the electrolytic solution.

13)如上述12)之藉由電解進行之氫氧化銦或含有氫氧化銦之化合物的製造方法,其中,使用不鏽鋼板或鈦板作為陰極板進行電解。 13) A method for producing indium hydroxide or a compound containing indium hydroxide by electrolysis according to the above 12), wherein the electrolysis is carried out using a stainless steel plate or a titanium plate as a cathode plate.

14)如上述12)或13)之藉由電解進行之氫氧化銦或含有氫氧化銦之化合物的製造方法,其中,配置1個或複數個自各陰極板與陽極板之間之一側緣朝另一側緣供給電解液之噴嘴,對自該噴嘴之開口部流出之電解液之各個液流進行調節,使其於電解槽中之各陰極板與陽極板之間回流,使氫氧化銦或含有氫氧化銦之化合物析出至電解液中。 14) A method for producing an indium hydroxide or a compound containing indium hydroxide by electrolysis according to the above 12) or 13), wherein one or a plurality of side edges from each of the cathode plate and the anode plate are disposed toward each other The other side of the nozzle for supplying the electrolyte adjusts each liquid flow of the electrolyte flowing out from the opening of the nozzle to recirculate between the cathode plate and the anode plate in the electrolytic cell to make indium hydroxide or A compound containing indium hydroxide is precipitated into the electrolytic solution.

15)如上述12)至14)中任一項之藉由電解進行之氫氧化銦或含有氫氧化銦之化合物的製造方法,其進一步具有下述步驟:取出析出至電解液中之氫氧化銦或含有氫氧化銦之化合物的步驟;將該氫氧化物濃縮,分離成固形物 成分濃縮液與固形物成分稀薄液的步驟;將該固形物成分稀薄液分配至上述電解液供給噴嘴的步驟。 15) The method for producing indium hydroxide or a compound containing indium hydroxide by electrolysis according to any one of the above items 12) to 14), further comprising the step of: taking out indium hydroxide precipitated into the electrolytic solution Or a step comprising a compound of indium hydroxide; concentrating the hydroxide to separate into a solid a step of dispersing the component concentrate and the solid component; and discharging the solid component diluent to the electrolyte supply nozzle.

16)如上述15)之藉由電解進行之氫氧化銦粉末或含有氫氧化銦之化合物粉末的製造方法,其具有下述步驟:對上述固形物成分濃縮液進行過濾,將該濾液分配至上述電解液供給噴嘴的步驟;及對經過濾之固形物進行乾燥製成氫氧化銦粉末或含有氫氧化銦之化合物粉末的步驟。 16) The method for producing an indium hydroxide powder or a compound powder containing indium hydroxide by electrolysis according to the above 15), comprising the steps of: filtering the solid component concentrate, and distributing the filtrate to the above a step of supplying an electrolyte to the nozzle; and drying the filtered solid to form an indium hydroxide powder or a compound powder containing indium hydroxide.

17)如上述12)至16)之氫氧化銦或含有氫氧化銦之化合物的製造方法,其中,以電解液之供給速度對於電流值、電解面積、時間成為0.01~100.0L.m2/A.分之方式使電解液流動。 17) The method for producing indium hydroxide or a compound containing indium hydroxide according to the above 12) to 16), wherein the supply rate of the electrolyte is 0.01 to 100.0 L with respect to the current value, the electrolysis area, and the time. m 2 /A. The way the electrolyte flows.

於藉由電解而製造氫氧化銦或含有氫氧化銦之化合物時,能較有效率地製造氫氧化銦或含有氫氧化銦之化合物,藉此具有可提高製造靶材時之燒結性的優異效果。 When indium hydroxide or a compound containing indium hydroxide is produced by electrolysis, indium hydroxide or a compound containing indium hydroxide can be efficiently produced, thereby having an excellent effect of improving the sinterability at the time of producing a target. .

又,於電解槽中配置有作為陽極(anode)之銦板及陰極(cathode)板,使電解液流動於其間而進行電解時,於電解之中途使電解陽極再生,藉此可防止雜質濃縮於陽極表面、陽極於電解中途脫落於浴中、混入電解液中生成之除氫氧化銦以外的雜質含量較高之氫氧化銦或雜質而導致氫氧化銦之品質產生差異。 In addition, an indium plate and a cathode plate as an anode are disposed in the electrolytic cell, and when the electrolytic solution is flowed therebetween to perform electrolysis, the electrolytic anode is regenerated in the middle of electrolysis, thereby preventing concentration of impurities. The surface of the anode and the anode are detached from the bath in the middle of electrolysis, and indium hydroxide or impurities having a high impurity content other than indium hydroxide formed by mixing in the electrolyte solution cause a difference in quality of the indium hydroxide.

進而,於藉由電解而製造氫氧化銦或含有氫氧化銦之化合物時,於陽極表面未附著氫氧化銦或含有氫氧化銦之化合物,亦於陰極之表面未電沈積銦或銦合金,使電解液回流,能有效率地製造氫氧化銦或含有氫氧化銦之化合 物,藉此具有可提高生產性之優異效果。 Further, when indium hydroxide or a compound containing indium hydroxide is produced by electrolysis, no indium hydroxide or a compound containing indium hydroxide is adhered to the surface of the anode, and indium or an indium alloy is not electrodeposited on the surface of the cathode. The electrolyte is refluxed to efficiently produce indium hydroxide or a compound containing indium hydroxide Therefore, it has an excellent effect of improving productivity.

將自銦(In)製造氫氧化銦(In(OH)3)之電解步驟之流程係示於圖1中。如該圖1所示,鑄造作為原料之銦而製造由銦所構成之陽極板,且將其配置於電解槽中。 The scheme of the electrolysis step of producing indium hydroxide (In(OH) 3 ) from indium (In) is shown in FIG. As shown in FIG. 1, an indium plate made of indium was produced by casting indium as a raw material, and this was placed in an electrolytic cell.

於電解槽中,將複數個由不鏽鋼板或鈦板構成之陰極板交替地平行配置。對電解槽供給電解液。電解液係使用硝酸銨水溶液(NH4NO3)。再者,關於電解液,並無特別指定,可使用硝酸系水溶液、硫酸系水溶液、鹽酸系水溶液或其他電解質等中之任意一種,但就成本或製品純度維持之方面而言,可以說較佳為硝酸銨水溶液。 In the electrolytic cell, a plurality of cathode plates composed of a stainless steel plate or a titanium plate are alternately arranged in parallel. The electrolyte is supplied to the electrolytic cell. An aqueous solution of ammonium nitrate (NH 4 NO 3 ) was used as the electrolytic solution. Further, the electrolytic solution is not particularly specified, and any one of a nitric acid aqueous solution, a sulfuric acid aqueous solution, a hydrochloric acid aqueous solution, or another electrolyte may be used. However, it is preferable in terms of cost or product purity maintenance. It is an aqueous solution of ammonium nitrate.

於以下之說明中,揭示自銦(In)製造氫氧化銦(In(OH)3)之例,但亦可同樣應用於使用銦合金之陽極而製造含有氫氧化銦之化合物之情形。銦合金之代表例有用於ITO之銦錫合金或銦鋅合金等。除此之外,亦有添加其他元素之合金等,可應用於與作為本案發明之代表例所揭示之自銦(In)製造氫氧化銦(In(OH)3)之例產生同樣現象的所有情形。 In the following description, an example of producing indium hydroxide (In(OH) 3 ) from indium (In) is disclosed, but the same can be applied to the case of using an indium alloy anode to produce a compound containing indium hydroxide. Representative examples of the indium alloy include an indium tin alloy or an indium zinc alloy for ITO. In addition, an alloy or the like to which other elements are added may be applied to all of the same phenomena as the case of producing indium hydroxide (In(OH) 3 ) from indium (In) disclosed as a representative example of the present invention. situation.

作為添加元素,除上述之錫(Sn)、鋅(Zn)以外,可列舉銅(Cu)、銀(Ag)、銻(Sb)、碲(Te)、鉍(Bi)、鉈(Tl)、鈣(Ga)、鍺(Ge)、鎘(Cd)等。於電解時,該等添加元素之大部分係與銦同樣地成為氫氧化物,但亦有以添加元素之氧化物或添加元素之單體或合金或其等之混合物的形式而存在之情形。本案發明係含有氫氧化銦中所包 含之所有該等化合物(包含混合物)者。 Examples of the additive element include copper (Cu), silver (Ag), bismuth (Sb), strontium (Te), bismuth (Bi), and strontium (Tl), in addition to the above-mentioned tin (Sn) and zinc (Zn). Calcium (Ga), strontium (Ge), cadmium (Cd), and the like. At the time of electrolysis, most of these added elements are hydroxides in the same manner as indium, but they may be present in the form of a mixture of an elemental oxide or a monomer or alloy of an additive element or a mixture thereof. The invention of the present invention contains the inclusion of indium hydroxide Any of these compounds (including mixtures).

藉由電解,使銦熔解,且使氫氧化銦之微細粒子析出至電解液中。取出該析出至電解液中之氫氧化銦,使其濃縮,分離成固形物成分濃縮液與固形物成分稀薄液。此時,對固形物成分濃縮液進行清洗、過濾、乾燥,獲得氫氧化銦粉末。另一方面,關於固形物成分稀薄液,使其回流至電解液中,進行液流調節後再利用。又,關於上述固形物成分濃縮液過濾後所得之濾液,亦使其回流至電解液中,進行液流調節後再利用。 Indium is melted by electrolysis, and fine particles of indium hydroxide are precipitated in the electrolytic solution. The indium hydroxide deposited in the electrolytic solution is taken out, concentrated, and separated into a solid content concentrate liquid and a solid content component thin liquid. At this time, the solid component concentrate is washed, filtered, and dried to obtain an indium hydroxide powder. On the other hand, the solid matter component thin liquid is returned to the electrolytic solution, and the liquid flow is adjusted and reused. Further, the filtrate obtained by filtering the solid content concentrate is also refluxed to the electrolytic solution, and the liquid flow is adjusted and reused.

此處之問題在於,進行電解時,電流效率變得極其差。進而,於燒結經固液分離之氫氧化銦或其化合物時,存在燒結密度無法提高、或燒結密度於靶材內產生不均之問題。 The problem here is that the current efficiency becomes extremely poor when electrolysis is performed. Further, when sintering the solid-liquid-separated indium hydroxide or a compound thereof, there is a problem that the sintered density cannot be increased or the sintered density is uneven in the target.

因此,經過各種研究後明白,若電解液中之導電度過低,則電流效率變得極其差,另外,燒結密度較低之原因在於附著於氫氧化銦上之電解液。 Therefore, after various studies, it is understood that if the conductivity in the electrolytic solution is too low, the current efficiency becomes extremely poor, and the reason why the sintered density is low is the electrolytic solution attached to the indium hydroxide.

又,隨著電解之進行,銦陽極(anode)板之雜質元素逐漸殘留濃縮於銦陽極表面。將該情況示於圖2。 Further, as the electrolysis progresses, the impurity elements of the indium anode plate are gradually left to concentrate on the surface of the indium anode. This situation is shown in Fig. 2.

溶出電位高於銦之金屬元素殘留於表面,僅銦離子化並溶出。若雜質濃縮於陽極表面,則該雜質尤其是溶出電位高於銦之金屬元素亦離子化並溶出,且混入氫氧化銦漿料中。進而,雜質自陽極表面脫落,混入氫氧化銦漿料中。 The metal element having a higher elution potential than indium remains on the surface, and only indium is ionized and eluted. If the impurities are concentrated on the surface of the anode, the impurities, particularly metal elements having a higher elution potential than indium, are also ionized and eluted, and are mixed into the indium hydroxide slurry. Further, impurities are detached from the surface of the anode and mixed into the indium hydroxide slurry.

本發明係於藉由電解而製造氫氧化銦或含有氫氧化銦之化合物之時,將電解液之導電度設為10mS/cm以上、更佳之上限為500mS/cm進行電解,使氫氧化銦或含有氫氧 化銦之化合物析出至電解液中。藉此,可使電流效率成為大致100%。 In the present invention, when indium hydroxide or a compound containing indium hydroxide is produced by electrolysis, electrolysis is carried out by setting the conductivity of the electrolytic solution to 10 mS/cm or more, more preferably 500 mS/cm, to make indium hydroxide or Containing hydrogen and oxygen The indium compound is precipitated into the electrolyte. Thereby, the current efficiency can be made approximately 100%.

進而,本發明之必要條件係對所析出之氫氧化銦或含有氫氧化銦之化合物進行清洗直至該清洗液之導電度成為1mS/cm以下為止。較佳為,清洗至清洗液之導電度成為0.1mS/cm以下為止。將藉此獲得之氫氧化物乾燥或還原,將其作為氧化物之燒結原料,進而進行燒結。藉此,可使燒結體之相對密度提高至99%以上。 Further, in the present invention, the precipitated indium hydroxide or the compound containing indium hydroxide is washed until the conductivity of the cleaning liquid becomes 1 mS/cm or less. Preferably, the cleaning degree until the conductivity of the cleaning liquid is 0.1 mS/cm or less. The hydroxide obtained thereby is dried or reduced, and this is used as a sintering raw material of an oxide, and further sintered. Thereby, the relative density of the sintered body can be increased to 99% or more.

又,於本案發明中,對上述方面進行改良,於陽極板之重量成為陽極之初始重量之20%~80%之階段中止電解。若未達20%,則大量之雜質會濃縮於陽極表面,而產生如上所述之問題。若超出80%,則使用效率較差,生產性惡化。繼而,取出使用完之陽極板,對於該使用完之陽極板,補充新的銦金屬並加以鑄造,重新製作陽極板,該熔解-鑄造法並無特別之限制。不補充新的銦金屬,僅鑄造使用完之陽極板亦毫無問題。 Further, in the invention of the present invention, the above aspect is improved, and the electrolysis is stopped at a stage where the weight of the anode plate becomes 20% to 80% of the initial weight of the anode. If it is less than 20%, a large amount of impurities will concentrate on the surface of the anode, causing the problems as described above. If it exceeds 80%, the use efficiency is poor and the productivity is deteriorated. Then, the used anode plate is taken out, and the used anode plate is filled with new indium metal and cast to re-form the anode plate. The melt-casting method is not particularly limited. Without adding new indium metal, it is no problem to cast only the used anode plate.

使用該重新製作之銦金屬陽極板開始電解,可使電解液中析出氫氧化銦粒子。該重新製作陽極板可經由同樣之步驟,使用至陽極板之重量成為陽極之初始重量之20%~80%之階段。使用後,可藉由同樣之方法再生電解陽極。該陽極之重新製作之操作可反覆進行數次。 Electrolysis is started using the reconstituted indium metal anode plate to precipitate indium hydroxide particles in the electrolyte. The reconstituted anode plate can be used in the same step, using the weight of the anode plate to be 20% to 80% of the initial weight of the anode. After use, the electrolytic anode can be regenerated by the same method. The re-manufacturing of the anode can be repeated several times.

可使用之陽極之範圍較寬,為初始重量之20%~80%,其主要係取決於陽極之純度之差異。一般而言,流通之銦原料中雜質之含量會大幅變動。又,於陽極之製作階段, 雜質之混入量亦會視狀況而有變動。若雜質較多,則進行電解時,濃縮於陽極表面之雜質量當然會增多,從而使用效率降低。另一方面,若雜質較少,則濃縮於陽極表面之雜質量會較少,故而使用效率較高。 The range of anodes that can be used is wide, ranging from 20% to 80% of the initial weight, which is primarily dependent on the difference in purity of the anode. In general, the amount of impurities in the indium raw material flowing through will vary greatly. Also, in the production stage of the anode, The amount of impurities mixed may also vary depending on the situation. When there are many impurities, when the electrolysis is performed, the amount of impurities concentrated on the surface of the anode is naturally increased, and the use efficiency is lowered. On the other hand, if the amount of impurities is small, the amount of impurities concentrated on the surface of the anode is small, so that the use efficiency is high.

電解亦並非均勻地消耗陽極表面,與雜質較多之部位相比,電流容易流動之部位(雜質較少之部位)的消耗更快,亦有陽極錠自中途脫落之現象。根據以上情況可以說,存在如下傾向:雜質含量較少之陽極的使用效率較高,雜質含量較多之陽極的使用效率較低。 Electrolysis does not uniformly consume the surface of the anode. Compared with the portion where the impurities are large, the portion where the current easily flows (the portion with less impurities) is consumed more quickly, and the anode ingot is detached from the middle. According to the above, it can be said that there is a tendency that the anode having a small impurity content is used more efficiently, and the anode having a larger impurity content is used less efficiently.

又,亦存在並非所有In均成為氫氧化銦,而於陰極之一部分電沈積有In,其成長而導致短路之情形。於該情形時,必需中斷電解。該短路可由電壓變化看出。該等要因為上述20%~80%之寬範圍的理由。 Further, there is also a case where not all of In is indium hydroxide, and In is electrodeposited in one part of the cathode, which grows to cause a short circuit. In this case, it is necessary to interrupt the electrolysis. This short circuit can be seen by the voltage change. These reasons are due to the wide range of the above 20% to 80%.

此處之問題在於,進行電解時,於電解槽中之由銦所構成之陽極板之表面附著有生成之氫氧化銦,又,於陰極板之表面電沈積有銦,存在無法繼續電解之問題。該銦以樹枝(樹枝狀結晶)狀延伸,亦產生陽極及陰極短路之問題。 The problem here is that in the electrolysis, the generated indium hydroxide adheres to the surface of the anode plate made of indium in the electrolytic cell, and indium is deposited on the surface of the cathode plate, and there is a problem that electrolysis cannot be continued. . The indium extends in the form of branches (dendritic crystals), which also causes a problem of short circuit between the anode and the cathode.

此種問題在於,若為了提高生產效率而提高電解電流密度,則會較明顯地產生氫氧化銦之附著或銦之電沈積。銦對陰極板之電沈積或氫氧化銦對陽極板之附著雖並非那麼牢固,但若其附著量增多,則有逐漸變得難以剝離之傾向。因此,於電解之初期,進行如下方法(試驗):使電解液於各陽極板與陰極板之間回流,藉由電解液之回流,阻 止銦對陰極之電沈積或氫氧化銦對陽極之附著。 The problem is that if the electrolytic current density is increased in order to increase the production efficiency, the adhesion of indium hydroxide or the electrodeposition of indium is more apparent. The deposition of indium on the cathode plate or the adhesion of indium hydroxide to the anode plate is not so strong, but if the amount of adhesion increases, there is a tendency that it is gradually difficult to peel off. Therefore, in the initial stage of electrolysis, the following method (test) is carried out: the electrolyte is refluxed between the anode plates and the cathode plates, and the electrolyte is refluxed. The deposition of indium on the cathode or the adhesion of indium hydroxide to the anode.

使用圖3說明先前之電解裝置。該圖3所示之左側為電解槽之俯視圖,右側為陽極板與陰極板之中間位置之側視圖。如圖3所示,於電解槽中將陽極(anode)板與陰極(cathode)板隔開10~500mm之間隔而配置,將供給電解液之噴嘴之供給口配置於電解槽上部。 The previous electrolysis apparatus will be described using FIG. The left side shown in Fig. 3 is a plan view of the electrolytic cell, and the right side is a side view of the intermediate position between the anode plate and the cathode plate. As shown in Fig. 3, an anode plate and a cathode plate are disposed at intervals of 10 to 500 mm in an electrolytic cell, and a supply port of a nozzle for supplying an electrolytic solution is disposed in an upper portion of the electrolytic cell.

繼而,沿圖3之右側之圖之箭頭所示之方向,向電解槽中供給電解液。供給電解液之流動強度(電解液供給速度)設為0.5L.m2/A.分。該電解液之流動強度(電解液供給速度)係表示對於陽極或陰極中之任一者之電流密度(A/dm2或A/m2)的流速(L/分)。以下,表示電解液之流動強度(電解液供給速度)之情形係使用同樣之含義。 Then, the electrolyte is supplied to the electrolytic cell in the direction indicated by the arrow on the right side of FIG. The flow strength (electrolyte supply rate) supplied to the electrolyte was set to 0.5 L. m 2 /A. Minute. The flow strength (electrolyte supply rate) of the electrolytic solution means a flow rate (L/min) of a current density (A/dm 2 or A/m 2 ) for any of the anode or the cathode. Hereinafter, the same meaning is used for the case where the flow strength (electrolyte supply rate) of the electrolytic solution is shown.

於該先前之電解液之供給方法中,產生銦對陰極板之電沈積或氫氧化銦對陽極板之附著。即便將電解液之流動強度(電解液供給速度)設為大於上述者,亦具有同樣之結果。 In the prior supply method of the electrolyte, the electrodeposition of indium to the cathode plate or the adhesion of indium hydroxide to the anode plate is produced. Even if the flow strength (electrolyte supply rate) of the electrolytic solution is made larger than the above, the same result is obtained.

為了抑制銦對該陰極板之電沈積或氫氧化銦對陽極板之附著之產生,考慮到調節液流之方向,進行數次實驗。 In order to suppress the electrodeposition of indium to the cathode plate or the adhesion of indium hydroxide to the anode plate, several experiments were carried out in consideration of the direction of the liquid flow.

將該氫氧化銦之電解製造裝置之概略說明圖示於圖4。圖4之左側為自上方觀察之概略說明圖(俯視圖),右側為陽極板與陰極板之中間位置之側面之概略說明圖。除噴嘴之配置以外,均與圖3所示之結構相同。 A schematic illustration of the electrolytic production apparatus for indium hydroxide is shown in Fig. 4 . The left side of Fig. 4 is a schematic explanatory view (top view) viewed from above, and the right side is a schematic explanatory view of the side of the intermediate position between the anode plate and the cathode plate. Except for the configuration of the nozzles, they are the same as those shown in FIG.

繼而,使電解液沿圖4之右側之圖之箭頭所示之方向回流。該電解液之流動強度(電解液供給速度)設為0.01 ~100.0L.m2/A.分。如圖4所示,使液流以自各陽極、陰極間之下側向中央旋轉之方式流動。 Then, the electrolyte was refluxed in the direction indicated by the arrow on the right side of FIG. The flow strength (electrolyte supply rate) of the electrolyte is set to 0.01 to 100.0 L. m 2 /A. Minute. As shown in Fig. 4, the liquid flow was caused to rotate from the lower side to the center between the anode and the cathode.

再者,若電解液供給速度低於0.01L.m2/A.分,則即便利用回流方式,亦無法解決上述之問題。若高於100.0L.m2/A.分,則液流之循環速度變快,液流成為紊流,附著於陽極表面之氫氧化銦以粗大之顆粒狀直接剝離、脫落,或者,生成之氫氧化物之形狀變得極其微細,從而無法使用。該電解液之流動強度(電解液供給速度)較佳為0.1~10.0L.m2/A.分。 Furthermore, if the electrolyte supply rate is lower than 0.01L. m 2 /A. Even if the reflow method is used, the above problem cannot be solved. If it is higher than 100.0L. m 2 /A. The circulation speed of the liquid flow is increased, the liquid flow becomes turbulent, and the indium hydroxide adhering to the surface of the anode is directly peeled off or peeled off in the form of coarse particles, or the shape of the formed hydroxide becomes extremely fine, thereby Not available. The flow strength (electrolyte supply rate) of the electrolyte is preferably 0.1 to 10.0 L. m 2 /A. Minute.

根據圖4之液流之控制結果可知,若使用如圖4所示之噴嘴,則銦對陰極板之電沈積或氫氧化銦對陽極板之附著均消失。為查明該原因,調查電解槽內之電解液經過確認後可知,如圖5之液流之示意圖所示,於陰極板與陽極板之中央部產生充分之電解液之流動。 According to the control result of the liquid flow of Fig. 4, if the nozzle shown in Fig. 4 is used, the electrodeposition of indium to the cathode plate or the adhesion of indium hydroxide to the anode plate disappears. In order to ascertain the cause, it was found that the electrolyte in the electrolytic cell was confirmed, and as shown in the schematic diagram of the liquid flow in Fig. 5, a sufficient flow of the electrolyte was generated in the central portion of the cathode plate and the anode plate.

其結果為,本發明之回流方法極其有效,藉由簡單的裝置之改良,可有效地抑制氫氧化銦對陽極板之附著或銦對陰極板之電沈積之產生,於陰極板及陽極板之所有面均未發現該附著或電沈積之產生。 As a result, the reflow method of the present invention is extremely effective, and the improvement of the adhesion of indium hydroxide to the anode plate or the electrodeposition of the indium to the cathode plate can be effectively suppressed by a simple device improvement, in the cathode plate and the anode plate. No attachment or electrodeposition was observed on all the faces.

根據以上可知,於各陰極板與陽極板之間,自一側緣向另一側緣供給電解液、且使其於電解槽中之各陰極板與陽極板之間回流係抑制銦對陰極板之電沈積或氫氧化銦對陽極板之附著的有效方法,本發明係基於如上述之實驗結果而成者。 According to the above, the electrolyte solution is supplied from the one edge to the other side between the cathode plate and the anode plate, and the reflux between the cathode plate and the anode plate in the electrolytic cell suppresses the indium-to-cathode plate. An effective method of electrodeposition or adhesion of indium hydroxide to an anode plate, the present invention is based on the results of the experiments as described above.

即,可知,於電解槽中將陰極板與作為原料之銦之陽 極板隔開10~500mm之間隔交替地排列,於該陰極板與陽極板之間且為各陰極板及陽極板之一側緣之附近位置,配置向陰極板及陽極板之另一側緣供給電解液之噴嘴,使自該噴嘴之開口部流出之電解液於電解槽中之各陰極板與陽極板之間回流,從而使電解液中析出氫氧化銦之方法較為有效。 That is, it can be seen that the cathode plate and the anode of indium as a raw material are used in the electrolytic cell. The plates are alternately arranged at intervals of 10 to 500 mm, and the other side of the cathode plate and the anode plate are disposed between the cathode plate and the anode plate and adjacent to one side edge of each of the cathode plate and the anode plate. The nozzle for supplying the electrolyte makes it possible to reflux the electrolyte flowing out from the opening of the nozzle between the cathode plate and the anode plate in the electrolytic cell, thereby effectively depositing indium hydroxide in the electrolytic solution.

再者,關於供給電解液之噴嘴徑(口徑),係根據電解槽之大小、各陰極板與陽極板之間隔之大小、電解液之供給量、噴嘴之配置及個數等而適當調節。因此,噴嘴徑(口徑)並無特別限制。 In addition, the nozzle diameter (caliber) for supplying the electrolytic solution is appropriately adjusted depending on the size of the electrolytic cell, the size of the interval between the cathode plates and the anode plates, the supply amount of the electrolytic solution, the arrangement and number of nozzles, and the like. Therefore, the nozzle diameter (caliber) is not particularly limited.

於陰極板與陽極板之間,亦可形成較寬大之間隙,於此種情形時,亦可增加液流。即,配置1個或複數個供給電解液之噴嘴作為朝陰極板與陽極板之間之另一側緣供給電解液之噴嘴,使自該噴嘴之開口部流出之電解液於電解槽中之各陰極板與陽極板之間回流,可使氫氧化銦析出至電解液中。 A wide gap can also be formed between the cathode plate and the anode plate, and in this case, the liquid flow can also be increased. That is, one or a plurality of nozzles for supplying an electrolytic solution are disposed as nozzles for supplying an electrolytic solution to the other side edge between the cathode plate and the anode plate, and each of the electrolyte flowing out from the opening of the nozzle is in the electrolytic cell. The reflux between the cathode plate and the anode plate allows precipitation of indium hydroxide into the electrolyte.

有效的是,對自下部噴嘴、上部噴嘴、或中間噴嘴之開口部流出的電解液之液流進行調節,使各者之液流於陰極板與陽極板之間以自各陰極板及陽極板之一側緣向另一側緣畫弧線之方式回流(旋轉)。認為,於此情形時,電解液之回流必需均勻地流動於各陰極板與陽極板之間,該液流之一部分必需銜接於陰極板及陽極板之表面。然而,若於陰極板與陽極板之間可回流至陰極板及陽極板之整個表面,則可以說該回流之方向不需有特別限制。 It is effective to adjust the flow of the electrolyte flowing out from the opening of the lower nozzle, the upper nozzle, or the intermediate nozzle, so that the liquid of each of them flows between the cathode plate and the anode plate from the cathode plate and the anode plate. The one side edge is reflowed (rotated) by drawing an arc to the other side edge. It is considered that in this case, the reflux of the electrolyte must flow uniformly between the cathode plates and the anode plates, and one of the streams must be bonded to the surfaces of the cathode plates and the anode plates. However, if the cathode plate and the anode plate can be reflowed to the entire surface of the cathode plate and the anode plate, it can be said that the direction of the reflow does not need to be particularly limited.

本發明中,使用不鏽鋼板或鈦板作為陰極板較為有效,但只要不污染電解液,亦可為其他材料。 In the present invention, it is effective to use a stainless steel plate or a titanium plate as a cathode plate, but other materials may be used as long as they do not contaminate the electrolyte.

可為如下之電解製造裝置,其中設置有取出析出至電解液中之氫氧化銦之裝置、將該氫氧化物濃縮並分離成固形物成分濃縮液與固形物成分稀薄液之裝置、及將該固形物成分稀薄液分配至上述電解液供給噴嘴之裝置,該電解製造裝置還具有:對上述固形物成分濃縮液進行過濾,將該濾液分配至上述電解液供給噴嘴之裝置;利用水清洗經過濾之固形物之裝置;及對其進而進行乾燥而製成氧化銦粉末之氧化銦粉末製造裝置。為了降低製造裝置之成本,固液分離裝置、過濾裝置、濾液分配裝置、水洗裝置、粉末製造裝置等亦可伴隨本發明之電解裝置而設置。 The electrolysis manufacturing apparatus may be provided with a device for taking out indium hydroxide deposited in the electrolytic solution, a device for concentrating and separating the hydroxide into a solid component solid solution and a solid component thin liquid, and The apparatus for dispensing a solid content component into the electrolyte supply nozzle further comprises: means for filtering the solid component concentrate, and distributing the filtrate to the electrolyte supply nozzle; A device for solid content; and an apparatus for producing an indium oxide powder which is further dried to form an indium oxide powder. In order to reduce the cost of the manufacturing apparatus, a solid-liquid separation apparatus, a filtration apparatus, a filtrate distribution apparatus, a water washing apparatus, a powder manufacturing apparatus, and the like may be provided along with the electrolysis apparatus of the present invention.

[實施例] [Examples]

其次,說明本發明之實施例。再者,本實施例僅為一例,本發明並非限制於此例。即,於本發明之技術思想之範圍內,包含實施例以外之所有態樣或變形。 Next, an embodiment of the present invention will be described. Furthermore, this embodiment is merely an example, and the present invention is not limited to this example. That is, all the aspects or modifications other than the embodiments are included in the scope of the technical idea of the present invention.

(實施例1) (Example 1)

於陽極使用銦板,於陰極使用不鏽鋼板,使用硝酸銨水溶液作為電解液,藉由電解而使氫氧化物析出。將此情形時之電解液之導電度設為10mS/cm進行電解,結果電流效率為95%。 An indium plate was used for the anode, a stainless steel plate was used for the cathode, and an aqueous solution of ammonium nitrate was used as the electrolytic solution to precipitate a hydroxide by electrolysis. The electroconductivity of the electrolytic solution at this time was set to 10 mS/cm for electrolysis, and as a result, the current efficiency was 95%.

進而,過濾該氫氧化物,使用純水進行清洗直至清洗液之導電度成為0.1mS/cm。其後,加以乾燥而成為氧化銦,進而於1500℃之條件下進行燒結,獲得相對密度98% 之銦燒結體。 Further, the hydroxide was filtered and washed with pure water until the conductivity of the cleaning liquid became 0.1 mS/cm. Thereafter, it is dried to become indium oxide, and further sintered at 1500 ° C to obtain a relative density of 98%. Indium sintered body.

再者,此情形係表示於陽極使用銦且藉由電解而使氫氧化銦析出之例,於使用銦-錫等銦合金而使含有氫氧化銦之化合物(例如氫氧化銦與氫氧化錫之混合物)析出之情形時,亦可獲得同樣之結果。 Further, this case is an example in which indium is used in the anode and indium hydroxide is precipitated by electrolysis, and an indium alloy such as indium-tin is used to make a compound containing indium hydroxide (for example, indium hydroxide and tin hydroxide). The same result can be obtained when the mixture is precipitated.

即,對任一情形時所獲得之氫氧化銦或含有氫氧化銦之化合物進行清洗,藉此可確認相對密度提高,而且可確認成為其指標且為可控制之條件係清洗液之導電度。 In other words, the indium hydroxide or the indium hydroxide-containing compound obtained in any case was washed, whereby the relative density was improved, and the conductivity was determined as a parameter and the controllable condition was the conductivity of the cleaning liquid.

(實施例2) (Example 2)

將實施例1之電解液之導電度替換為100mS/cm而進行電解。此情形時之電流效率為99%。其後,利用純水進行再漿化洗淨(repulp washing)直至清洗液之導電度成為0.01mS/cm。於與實施例1相同之條件下進行燒結,結果獲得燒結體之相對密度為99.5%之高密度燒結體。 Electrolysis was carried out by replacing the conductivity of the electrolytic solution of Example 1 with 100 mS/cm. The current efficiency in this case is 99%. Thereafter, repulp washing was performed using pure water until the conductivity of the cleaning liquid became 0.01 mS/cm. Sintering was carried out under the same conditions as in Example 1, and as a result, a high-density sintered body having a sintered body having a relative density of 99.5% was obtained.

再者,此情形係表示於陽極使用銦且藉由電解使氫氧化銦析出之例,於使用銦-錫等銦合金而使含有氫氧化銦之化合物(例如氫氧化銦與氫氧化錫之混合物)析出之情形時,亦可獲得同樣之結果。 Further, this case is an example in which indium is used in the anode and indium hydroxide is precipitated by electrolysis, and a compound containing indium hydroxide (for example, a mixture of indium hydroxide and tin hydroxide) is used by using an indium alloy such as indium-tin. The same result can be obtained when the situation is precipitated.

與實施例1同樣地,對氫氧化銦或含有氫氧化銦之化合物進行清洗,藉此可確認相對密度提高,而且可確認成為該指標且為可控制之條件係清洗液之導電度。 In the same manner as in the case of the first embodiment, the indium hydroxide or the compound containing indium hydroxide was washed, whereby the relative density was improved, and the conductivity of the cleaning liquid was confirmed to be the index.

(比較例1) (Comparative Example 1)

將實施例1之電解液之導電度替換為8.0mS/cm而進行電解。其結果為,自陽極板產生氧氣,自陰極板產生氫 氣,因此電流效率約為80%,差。因無法製造出作為燒結原料之水準之氫氧化銦,故其後之步驟中止。 Electrolysis was carried out by replacing the conductivity of the electrolytic solution of Example 1 with 8.0 mS/cm. As a result, oxygen is generated from the anode plate and hydrogen is generated from the cathode plate. Gas, so the current efficiency is about 80%, poor. Since the indium hydroxide which is the level of the sintering raw material cannot be produced, the subsequent steps are terminated.

(比較例2) (Comparative Example 2)

將實施例1之電解液之導電度替換為50mS/cm而進行電解。電流效率為99%,良好,其後,對氫氧化物利用純水進行再漿化洗淨直至清洗液之導電度成為2mS/cm。於與實施例1相同之條件下進行燒結,結果燒結密度為95%,差,一部分燒結體產生破裂。認為,其係對析出之氫氧化銦未充分進行清洗之結果。 Electrolysis was carried out by replacing the conductivity of the electrolytic solution of Example 1 with 50 mS/cm. The current efficiency was 99%, which was good. Thereafter, the hydroxide was repulped and washed with pure water until the conductivity of the cleaning liquid became 2 mS/cm. Sintering was carried out under the same conditions as in Example 1. As a result, the sintered density was 95%, which was poor, and a part of the sintered body was cracked. It is considered that it is a result of insufficient washing of the precipitated indium hydroxide.

再者,此情形係表示於陽極使用銦且藉由電解使氫氧化銦析出之例,於使用銦-錫等銦合金而使含有氫氧化銦之化合物(例如氫氧化銦與氫氧化錫之混合物)析出之情形時,亦具有同樣之結果。 Further, this case is an example in which indium is used in the anode and indium hydroxide is precipitated by electrolysis, and a compound containing indium hydroxide (for example, a mixture of indium hydroxide and tin hydroxide) is used by using an indium alloy such as indium-tin. The same result is obtained when the situation is precipitated.

(比較例3) (Comparative Example 3)

將實施例1之電解液之導電度替換為1mS/cm而進行電解。結果電流效率為50%,極差。然而,對析出之氫氧化物利用純水進行再漿化洗淨直至清洗液之導電度成為0.01mS/cm。 Electrolysis was carried out by replacing the conductivity of the electrolytic solution of Example 1 with 1 mS/cm. As a result, the current efficiency is 50%, which is extremely poor. However, the precipitated hydroxide was repulped and washed with pure water until the conductivity of the cleaning liquid became 0.01 mS/cm.

繼而,於與實施例1相同之條件下進行燒結,結果燒結密度可達到99%。電解時之電流效率差,因此在實際操作中並非可使用之條件,但可確認氫氧化銦之清洗具有使燒結密度提高之效果。 Then, sintering was carried out under the same conditions as in Example 1, and as a result, the sintered density was 99%. Since the current efficiency at the time of electrolysis was inferior, it was not a usable condition in actual operation, but it was confirmed that the cleaning of indium hydroxide has an effect of improving the sintered density.

再者,此情形係表示於陽極使用銦且藉由電解使氫氧化銦析出之例,於使用銦-錫等銦合金而使含有氫氧化銦 之化合物(例如氫氧化銦與氫氧化錫之混合物)析出之情形時,亦具有同樣之結果。 In addition, this case is an example in which indium is used in the anode and indium hydroxide is precipitated by electrolysis, and an indium alloy such as indium-tin is used to contain indium hydroxide. The same result is obtained when a compound such as a mixture of indium hydroxide and tin hydroxide is precipitated.

(實施例3) (Example 3)

於自金屬銦(In)製造氫氧化銦(In(OH)3)之電解步驟中,鑄造出作為原料之金屬銦,製造由金屬銦構成之陽極板,將其配置於電解槽中。於電解槽中,將由不鏽鋼板或鈦板構成之陰極板交替地配置。複數個該等陽極板及陰極板平行地配置。向電解槽供給電解液。電解液係使用硝酸銨水溶液(NH4NO3)開始電解。 In the electrolysis step of producing indium hydroxide (In(OH) 3 ) from metal indium (In), a metal indium as a raw material is cast, and an anode plate made of metal indium is produced and placed in an electrolytic bath. In the electrolytic cell, cathode plates composed of a stainless steel plate or a titanium plate are alternately arranged. A plurality of the anode plates and the cathode plates are arranged in parallel. The electrolyte is supplied to the electrolytic cell. The electrolytic solution was started to electrolyze using an aqueous solution of ammonium nitrate (NH 4 NO 3 ).

其次,使電解液中析出氫氧化銦粒子,於陽極板成為初始重量之80%之階段中止電解。繼而取出使用完之陽極板,使該使用完之陽極板熔解。於進行該熔解之時,補充新銦金屬並加以鑄造,重新製作陽極板。 Next, indium hydroxide particles were precipitated in the electrolytic solution, and electrolysis was stopped at a stage where the anode plate became 80% of the initial weight. The used anode plate is then removed to melt the used anode plate. At the time of the melting, the new indium metal was replenished and cast, and the anode plate was remade.

使用該重新製作之銦金屬陽極板,再次開始電解,可使氫氧化銦粒子析出至電解液中。該重新製作之陽極板可經由同樣之步驟,使用至成為陽極之初始重量之20%~80%之階段。於使用後,可藉由同樣之方法再生電解陽極。 Using this reconstituted indium metal anode plate, electrolysis is started again, and indium hydroxide particles can be precipitated into the electrolytic solution. The reconstituted anode plate can be used in the same step to achieve a stage of 20% to 80% of the initial weight of the anode. After use, the electrolytic anode can be regenerated by the same method.

於電解後,適當地取出析出至電解液中之氫氧化銦漿料,將該漿料濃縮,分離成固形物成分濃縮液與固形物成分稀薄液。繼而,將該固形物成分稀薄液分配至上述電解液供給噴嘴。又,對上述固形物成分濃縮液進行過濾,將該濾液分配至上述電解液供給噴嘴,另一方面,將經過濾之固形物加以乾燥,製成氫氧化銦粉末。 After the electrolysis, the indium hydroxide slurry deposited in the electrolytic solution is appropriately taken out, and the slurry is concentrated to separate into a solid content concentrate liquid and a solid content component thin liquid. Then, the solid content component thin liquid is dispensed to the above-described electrolyte supply nozzle. Further, the solid content concentrate is filtered, and the filtrate is distributed to the electrolytic solution supply nozzle, and the filtered solid matter is dried to obtain an indium hydroxide powder.

(實施例4) (Example 4)

與實施例1同樣地使氫氧化銦粒子析出至電解液中,於陽極板成為初始重量之20%之階段中止電解。與實施1同樣地進行重新製作,開始電解。重新製作之陽極板係使用至成為陽極之初始重量之50%為止。於使用後,藉由同樣之方法再生電解陽極。 In the same manner as in Example 1, the indium hydroxide particles were deposited in the electrolytic solution, and the electrolysis was stopped at the stage where the anode plate became 20% of the initial weight. Re-production was carried out in the same manner as in the first embodiment, and electrolysis was started. The reconstituted anode plate is used up to 50% of the initial weight of the anode. After use, the electrolytic anode was regenerated by the same method.

於電解後,適當地取出析出至電解液中之氫氧化銦漿料,將該漿料濃縮,分離成固形物成分濃縮液與固形物成分稀薄液。繼而,將該固形物成分稀薄液分配至上述電解液供給噴嘴。又,對上述固形物成分濃縮液進行過濾,將該濾液分配至上述電解液供給噴嘴,另一方面,將經過濾之固形物加以乾燥,製成氫氧化銦粉末。 After the electrolysis, the indium hydroxide slurry deposited in the electrolytic solution is appropriately taken out, and the slurry is concentrated to separate into a solid content concentrate liquid and a solid content component thin liquid. Then, the solid content component thin liquid is dispensed to the above-described electrolyte supply nozzle. Further, the solid content concentrate is filtered, and the filtrate is distributed to the electrolytic solution supply nozzle, and the filtered solid matter is dried to obtain an indium hydroxide powder.

(實施例5) (Example 5)

與實施例1同樣地使氫氧化銦粒子析出至電解液中,於陽極板成為初始重量之60%之階段中止電解。繼而,取出使用完之陽極板,將其熔解,於熔解時,添加新的銦金屬。 In the same manner as in Example 1, the indium hydroxide particles were deposited in the electrolytic solution, and the electrolysis was stopped at the stage where the anode plate became 60% of the initial weight. Then, the used anode plate is taken out and melted, and new indium metal is added during melting.

使用該重新製作之陽極板,開始電解。重新製作之陽極板係使用至成為陽極之初始重量之30%為止。於使用後,藉由同樣之方法再生電解陽極。 Electrolysis was started using the reworked anode plate. The reconstituted anode plate was used up to 30% of the initial weight of the anode. After use, the electrolytic anode was regenerated by the same method.

於電解後,適當地取出析出至電解液中之氫氧化銦漿料,將該漿料濃縮,分離成固形物成分濃縮液與固形物成分稀薄液。繼而,將該固形物成分稀薄液分配至上述電解液供給噴嘴。又,對上述固形物成分濃縮液進行過濾,將該濾液分配至上述電解液供給噴嘴,另一方面,將經過濾 之固形物加以乾燥,製成氫氧化銦粉末。 After the electrolysis, the indium hydroxide slurry deposited in the electrolytic solution is appropriately taken out, and the slurry is concentrated to separate into a solid content concentrate liquid and a solid content component thin liquid. Then, the solid content component thin liquid is dispensed to the above-described electrolyte supply nozzle. Further, the solid content concentrate is filtered, and the filtrate is distributed to the electrolyte supply nozzle, and the filter is filtered. The solid matter is dried to prepare an indium hydroxide powder.

(比較例4) (Comparative Example 4)

於自金屬銦(In)製造氫氧化銦(In(OH)3)之電解步驟中,鑄造出作為原料之金屬銦,製造由金屬銦構成之陽極板,將其配置於電解槽中。於電解槽中,將由不鏽鋼板或鈦板構成之陰極板交替地配置。複數個該等陽極板及陰極板平行地配置。向電解槽供給電解液。電解液係使用硝酸銨水溶液(NH4NO3)。 In the electrolysis step of producing indium hydroxide (In(OH) 3 ) from metal indium (In), a metal indium as a raw material is cast, and an anode plate made of metal indium is produced and placed in an electrolytic bath. In the electrolytic cell, cathode plates composed of a stainless steel plate or a titanium plate are alternately arranged. A plurality of the anode plates and the cathode plates are arranged in parallel. The electrolyte is supplied to the electrolytic cell. An aqueous solution of ammonium nitrate (NH 4 NO 3 ) was used as the electrolytic solution.

為了提高電解之生產效率,而欲繼續進行至成為陽極初始重量之15%左右。於該電解之中途,在銦陽極(anode)板及不鏽鋼製陰極(cathode)板產生大量的銦之粗大顆粒狀之雜質,因該等粗大顆粒狀之雜質而導致陽極板及陰極板短路,無法進行電解。 In order to increase the production efficiency of electrolysis, it is intended to continue to be about 15% of the initial weight of the anode. In the middle of the electrolysis, a large amount of indium coarse particles are generated in the indium anode plate and the stainless steel cathode plate, and the anode plate and the cathode plate are short-circuited due to the coarse particulate impurities. Perform electrolysis.

於由銦金屬構成之陽極板,因雜質濃縮,故電壓升高,該雜質溶出。其結果為,雜質混入氫氧化銦中,產生電解液中之純度變差之問題。 In the anode plate made of indium metal, since the impurities are concentrated, the voltage rises and the impurities are eluted. As a result, impurities are mixed into the indium hydroxide to cause a problem that the purity in the electrolytic solution is deteriorated.

(比較例5) (Comparative Example 5)

因為陽極之雜質濃度較高,故於成為陽極之初始重量之85%左右的時間點中止電解。獲得之氫氧化物在純度等方面毫無問題,但於陽極表面大量地濃縮有雜質,若再繼續電解,則會導致於氫氧化銦之品質方面產生差異。 Since the impurity concentration of the anode is high, the electrolysis is stopped at a time point of about 85% of the initial weight of the anode. The obtained hydroxide has no problem in terms of purity and the like, but a large amount of impurities are concentrated on the surface of the anode, and if electrolysis is continued, a difference in quality of indium hydroxide is caused.

(比較例6) (Comparative Example 6)

為了提高電解之生產效率,而欲繼續進行至成為陽極之初始重量之5%左右。於該電解之中途,於陽極板之局部 形成孔,陽極脫落於浴中,裝置損壞,無法繼續進行電解。 In order to increase the production efficiency of electrolysis, it is desired to proceed to about 5% of the initial weight of the anode. In the middle of the electrolysis, on the part of the anode plate A hole is formed, the anode falls off in the bath, the device is damaged, and electrolysis cannot be continued.

又,完成之氫氧化物中之品質之差異較大,無法使用。 Moreover, the difference in the quality of the completed hydroxide is large and cannot be used.

(實施例6) (Example 6)

使用如上述圖4所示之裝置,藉由電解使氫氧化銦析出。具體而言,於電解槽中,將11個1000mm×700mm×5mmt之不鏽鋼製陰極板與作為原料之10個1000mm×700mm×50mmt之由銦構成之陽極板交替地排列10組,將該陰極板與陽極板之間隔開50mm,且於各陰極板與陽極板之間之一側緣之下端附近位置(距液面1000mm之位置),配置向陰極板及陽極板之另一側緣供給電解液的噴嘴。 Indium hydroxide was precipitated by electrolysis using the apparatus shown in Fig. 4 described above. Specifically, in the electrolytic cell, 11 sets of stainless steel cathode plates of 1000 mm × 700 mm × 5 mmt and 10 sets of 1000 mm × 700 mm × 50 mmt anode plates made of indium as raw materials are alternately arranged in 10 groups, and the cathode plates are alternately arranged. 50 mm between the anode plate and the anode plate and the anode plate at a position near the lower end of the side (1000 mm from the liquid surface), and the electrolyte is supplied to the other side of the cathode plate and the anode plate. Nozzle.

繼而,使電解液沿圖4之右側之圖之箭頭所示之方向回流,使自該噴嘴之開口部流出之電解液於電解槽中之各陰極板與陽極板之間回流,使氫氧化銦析出至電解液中。該電解液之流動強度(電解液供給速度)設為0.1L.m2/A(安培).分。如圖4所示,液流係以自下方向上方旋轉之方式流動。 Then, the electrolyte is refluxed in the direction indicated by the arrow on the right side of FIG. 4, and the electrolyte flowing out from the opening of the nozzle is recirculated between the cathode plates and the anode plate in the electrolytic cell to make indium hydroxide. Precipitated into the electrolyte. The flow strength of the electrolyte (electrolyte supply rate) was set to 0.1 L. m 2 /A (ampere). Minute. As shown in Fig. 4, the liquid flow is performed to rotate from the bottom to the top.

可知,根據如圖4所示之回流之方向,不會於陰極板與陽極板之間產生電解液流動的遺漏部分,而是產生整體均勻之回流(旋回流)。其結果為,可抑制氫氧化銦對該陽極板之附著或銦對陰極板之電沈積。於陰極板及陽極板之所有面均未發現該附著或電沈積之產生。 It can be seen that, according to the direction of the reflow shown in FIG. 4, a missing portion of the electrolyte flow is not generated between the cathode plate and the anode plate, but an overall uniform reflux (spin reflow) is produced. As a result, adhesion of indium hydroxide to the anode plate or electrodeposition of indium to the cathode plate can be suppressed. No such adhesion or electrodeposition was observed on all sides of the cathode and anode plates.

再者,此情形係表示於陽極使用銦且藉由電解使氫氧化銦析出之例,於使用銦-錫等銦合金而使含有氫氧化銦 之化合物析出之情形時,亦可獲得同樣之現象。於以下之實施例中亦同樣。 In addition, this case is an example in which indium is used in the anode and indium hydroxide is precipitated by electrolysis, and an indium alloy such as indium-tin is used to contain indium hydroxide. The same phenomenon can also be obtained when the compound is precipitated. The same applies to the following examples.

(實施例7) (Example 7)

利用與實施例1同樣之方法,將該電解液之流動強度(電解液供給速度)設為10L.m2/A.分。於此情形時,與實施例1同樣地可抑制銦對該陰極板之電沈積或氫氧化銦對陽極板之附著。於陰極板及陽極板之所有面均未發現該電沈積或附著之產生。 The flow strength (electrolyte supply rate) of the electrolytic solution was set to 10 L in the same manner as in Example 1. m 2 /A. Minute. In this case, in the same manner as in the first embodiment, the electrodeposition of indium to the cathode plate or the adhesion of indium hydroxide to the anode plate can be suppressed. This electrodeposition or adhesion was not observed on all sides of the cathode and anode plates.

(實施例8) (Example 8)

利用與實施例1同樣之方法,將該電解液之流動強度(電解液供給速度)設為0.01L.m2/A.分。於此情形時,雖部分地產生銦對該陰極板之電沈積或氫氧化銦對陽極板之附著,但並非不能使用。 The flow strength (electrolyte supply rate) of the electrolytic solution was set to 0.01 L in the same manner as in Example 1. m 2 /A. Minute. In this case, although indium is partially formed by electrodeposition of the cathode plate or adhesion of indium hydroxide to the anode plate, it is not unusable.

(實施例9) (Example 9)

利用與實施例1同樣之方法,將該電解液之流動強度(電解液供給速度)設為50L.m2/A.分。於此情形時,氫氧化銦之粗大顆粒自陽極有少許剝離,但可以使用。 The flow strength (electrolyte supply rate) of the electrolytic solution was set to 50 L in the same manner as in Example 1. m 2 /A. Minute. In this case, the coarse particles of indium hydroxide are slightly peeled off from the anode, but can be used.

(實施例10) (Embodiment 10)

利用與實施例1同樣之方法,將該電解液之流動強度(電解液供給速度)設為100L.m2/A.分。於此情形時,於陽極,氫氧化銦之粗大顆粒有一部分剝離,進而產生少許微細之氫氧化物(於1100℃焙燒後之平均粒徑為0.5μm以下)。但是,此本身並非大問題,可以使用。 The flow strength (electrolyte supply rate) of the electrolytic solution was set to 100 L in the same manner as in Example 1. m 2 /A. Minute. In this case, at the anode, a part of the coarse particles of indium hydroxide are partially peeled off, and a small amount of fine hydroxide (the average particle diameter after calcination at 1100 ° C is 0.5 μm or less) is generated. However, this is not a big problem in itself and can be used.

(實施例11) (Example 11)

使用如圖6所示之裝置,藉由電解使氫氧化銦析出。具體而言,係使用與實施例1同樣之陽極、陰極,於該陰極板與陽極板之間且為各陰極板與陽極板之間之一側緣之下端附近位置(距液面1000mm之位置)及距液面155mm之位置,配置向陰極板及陽極板之另一側緣供給電解液的下部噴嘴及上部噴嘴。 Indium hydroxide was precipitated by electrolysis using a device as shown in FIG. Specifically, the same anode and cathode as in Example 1 were used, and the position near the lower end of one side edge between the cathode plate and the anode plate and between the cathode plates and the anode plate (1000 mm from the liquid surface) was used. And a lower nozzle and an upper nozzle for supplying electrolyte to the other side edges of the cathode plate and the anode plate at a position of 155 mm from the liquid surface.

繼而,使2種電解液沿如圖6之右側之圖之箭頭所示之方向回流,使自該下部噴嘴及上部噴嘴之開口部流出之電解液於電解槽中之各陰極板與陽極板之間回流,使氫氧化銦析出至電解液中。該電解液之流動強度(電解液供給速度)設為10L.m2/A.分。如圖6所示,使液流以自上方向中央旋轉及自下方向中央旋轉該2種方式流動。 Then, the two electrolytes are reflowed in the direction indicated by the arrow in the right side of FIG. 6, and the electrolyte flowing out from the openings of the lower nozzle and the upper nozzle is placed in each of the cathode and anode plates in the electrolytic cell. The aluminum hydroxide was refluxed to precipitate indium hydroxide into the electrolyte. The flow strength of the electrolyte (electrolyte supply rate) was set to 10 L. m 2 /A. Minute. As shown in Fig. 6, the liquid flow is caused by the two types of rotation from the center to the center and from the center to the center.

可知,根據如圖6所示之回流之方向,不會於陰極板及陽極板之特定位置產生電解液流動之遺漏部分,而是產生整體均勻之回流(旋回流)。與實施例1之主要不同係:於距液面155mm之位置設置有上部噴嘴。其結果為,可抑制銦對該陰極板之電沈積或氫氧化銦對陽極板之附著。於陰極板及陽極板之所有面均未發現該電沈積或附著之產生。 It can be seen that, according to the direction of the reflow shown in Fig. 6, the missing portion of the electrolyte flow is not generated at a specific position of the cathode plate and the anode plate, but an overall uniform reflux (spin reflow) is produced. The main difference from the first embodiment is that an upper nozzle is provided at a position 155 mm from the liquid surface. As a result, the electrodeposition of indium to the cathode plate or the adhesion of indium hydroxide to the anode plate can be suppressed. This electrodeposition or adhesion was not observed on all sides of the cathode and anode plates.

再者,如圖8之液流之示意圖所示,與實施例2同樣地使用配置成2段之噴嘴,將上段之噴嘴配置於距液面322mm之位置,進行與實施例2同樣之實驗,結果獲得與實施例2同樣之結果。 Further, as shown in the schematic diagram of the liquid flow in Fig. 8, in the same manner as in the second embodiment, the nozzles arranged in two stages were used, and the nozzles of the upper stage were placed at a position 322 mm from the liquid surface, and the same experiment as in the second embodiment was carried out. As a result, the same results as in Example 2 were obtained.

(實施例12) (Embodiment 12)

使用如圖9所示之裝置,藉由電解使氫氧化銦析出。具體而言,係使用與實施例1同樣之陽極、陰極,於該陰極板與陽極板之間且為各陰極板及陽極板之一側緣之下端附近位置(距液面1000mm之位置)、距液面322mm之位置及上端附近位置(距液面155mm之位置),配置向陰極板及陽極板之另一側緣供給電解液的下部噴嘴、中間噴嘴及上部噴嘴。 Indium hydroxide was precipitated by electrolysis using a device as shown in FIG. Specifically, the same anode and cathode as in Example 1 were used, and the position between the cathode plate and the anode plate and the lower end of one side of each of the cathode plate and the anode plate (position 1000 mm from the liquid surface), The lower nozzle, the intermediate nozzle, and the upper nozzle that supply the electrolyte to the other side edges of the cathode plate and the anode plate are disposed at a position 322 mm from the liquid surface and a position near the upper end (a position 155 mm from the liquid surface).

繼而,使3種電解液沿圖9之右側之箭頭所示之方向回流,使自該下部噴嘴、中間噴嘴及上部噴嘴之開口部流出之電解液於電解槽中之各陰極板與陽極板之間回流,使氫氧化銦析出至電解液中。該電解液之流動強度(電解液供給速度)設為10L.m2/A.分。使液流以如下3種方式流動:自上部噴嘴由上向下旋轉、自中間噴嘴向上下分支而旋轉、及自下部噴嘴由下向上旋轉。 Then, the three electrolytes are reflowed in the direction indicated by the arrow on the right side of FIG. 9, and the electrolyte flowing out from the openings of the lower nozzle, the intermediate nozzle, and the upper nozzle is placed in each of the cathode and anode plates in the electrolytic cell. The aluminum hydroxide was refluxed to precipitate indium hydroxide into the electrolyte. The flow strength of the electrolyte (electrolyte supply rate) was set to 10 L. m 2 /A. Minute. The flow is caused to flow in three ways: from top to bottom from the upper nozzle, from the upper nozzle to the upper and lower branches, and from the lower nozzle from bottom to top.

可知,根據圖9所示之回流之方向,不會於陰極板與陽極板之中央部產生電解液流動之遺漏部分,而是產生整體均勻之回流(旋回流)。與實施例2之主要不同係:將中間噴嘴之開口部配置於距液面322mm之位置之方面,於此情形時,亦可抑制銦對該陰極板之電沈積或氫氧化銦對陽極板之附著。於陰極板及陽極板之所有面均未發現該電沈積或附著之產生。 It can be seen that, according to the direction of the reflow shown in Fig. 9, the missing portion of the electrolyte flow does not occur in the central portion of the cathode plate and the anode plate, but an overall uniform reflux (spin reflow) occurs. The main difference from the second embodiment is that the opening of the intermediate nozzle is disposed at a position 322 mm from the liquid surface. In this case, the electrodeposition of the indium plate or the indium hydroxide on the anode plate can also be suppressed. Attached. This electrodeposition or adhesion was not observed on all sides of the cathode and anode plates.

(比較例7) (Comparative Example 7)

使用如圖3所示之裝置,自電解槽之單側液面上導入電解液,藉由電解使氫氧化銦析出。具體而言,係使用與 實施例1同樣之陽極、陰極。該電解液之電解液供給速度設為0.5L.m2/A.分。其結果為,氫氧化銦大量地附著於該陽極板,又,亦存在銦對陰極板之電沈積,電解變得困難。 Using an apparatus as shown in Fig. 3, an electrolytic solution was introduced from the liquid surface on one side of the electrolytic cell, and indium hydroxide was precipitated by electrolysis. Specifically, the same anode and cathode as in Example 1 were used. The electrolyte supply speed of the electrolyte is set to 0.5L. m 2 /A. Minute. As a result, indium hydroxide is largely attached to the anode plate, and indium is also deposited on the cathode plate, and electrolysis becomes difficult.

(比較例8) (Comparative Example 8)

使用如圖3所示之裝置,將電解液供給速度設為10L.m2/A.分進行電解。其結果為,氫氧化銦附著於陽極板,且產生銦對陰極板之電沈積。該附著或電沈積係主要產生於陰極板與陽極板之大致中央部及下部。即便將電解液之流動強度(電解液供給速度)設為大於上述值,亦具有同樣之結果。 Using the device shown in Figure 3, the electrolyte supply rate was set to 10L. m 2 /A. Electrolysis is carried out. As a result, indium hydroxide adheres to the anode plate, and electrodeposition of indium to the cathode plate is produced. The adhesion or electrodeposition is mainly generated in the substantially central portion and the lower portion of the cathode plate and the anode plate. Even if the flow strength (electrolyte supply rate) of the electrolytic solution is made larger than the above value, the same result is obtained.

(比較例9) (Comparative Example 9)

使用電解裝置,對照圖3而自電解槽之單側之底部之1個部位導入電解液,藉由電解使氫氧化銦析出。此情形時,並非於各陰極板與陽極板之間配置噴嘴而使電解液於該等之板之間回流,而僅與圖3同樣地自電解槽底之部分(1個部位)供給電解液。將電解液供給速度設為0.5L.m2/A.分。 Using an electrolysis apparatus, an electrolytic solution was introduced from one portion of the bottom of one side of the electrolytic cell in accordance with Fig. 3, and indium hydroxide was precipitated by electrolysis. In this case, a nozzle is not disposed between each of the cathode plate and the anode plate, and the electrolytic solution is reflowed between the plates, and the electrolyte is supplied from a portion (one portion) of the bottom of the electrolytic cell only in the same manner as in Fig. 3 . . Set the electrolyte supply speed to 0.5L. m 2 /A. Minute.

其結果為,氫氧化銦附著於陽極板,且產生銦對陰極板之電沈積。該附著或電沈積主要係產生於陰極板與陽極板之大致中央部。即便將電解液之流動強度(電解液供給速度)設為大於上述值,亦具有同樣之結果。 As a result, indium hydroxide adheres to the anode plate, and electrodeposition of indium to the cathode plate is produced. The adhesion or electrodeposition is mainly generated at a substantially central portion of the cathode plate and the anode plate. Even if the flow strength (electrolyte supply rate) of the electrolytic solution is made larger than the above value, the same result is obtained.

(比較例10) (Comparative Example 10)

於與實施例1相同之條件下,將電解液供給速度設為0.009L.m2/A.分。其結果為,氫氧化銦大量地附著於陽極 板,銦電沈積於陰極板,導致陽極及陰極短路,難以繼續進行電解。該附著或電沈積主要係產生於陰極板與陽極板之大致中央部。 Under the same conditions as in Example 1, the electrolyte supply rate was set to 0.009 L. m 2 /A. Minute. As a result, indium hydroxide adheres to the anode plate in a large amount, and indium is electrodeposited on the cathode plate, causing the anode and the cathode to be short-circuited, and it is difficult to continue electrolysis. The adhesion or electrodeposition is mainly generated at a substantially central portion of the cathode plate and the anode plate.

(比較例11) (Comparative Example 11)

於與實施例1相同之條件下,將電解液供給速度設為110L.m2/A.分。其結果為,未產生氫氧化銦對陽極板之附著或銦對陰極板之電沈積,但銦之粗大顆粒自陽極大量地剝離,進而大量地產生微細之氫氧化物(於1100℃焙燒後之平均粒徑為0.5μm以下),無法使用。 Under the same conditions as in Example 1, the electrolyte supply rate was set to 110 L. m 2 /A. Minute. As a result, no adhesion of indium hydroxide to the anode plate or electrodeposition of indium to the cathode plate was produced, but the coarse particles of indium were largely peeled off from the anode, and a large amount of fine hydroxide was produced (after calcination at 1100 ° C) The average particle diameter is 0.5 μm or less) and cannot be used.

[產業上之可利用性] [Industrial availability]

本發明係一種藉由電解而製造氫氧化銦或含有氫氧化銦之化合物之方法,其中,將電解液之導電度設為10mS/cm以上進行電解,使氫氧化銦或含有氫氧化銦之化合物析出至電解液中,進而對所析出之氫氧化銦或含有氫氧化銦之化合物進行清洗直至清洗液之導電度成為1mS/cm以下,藉此,有抑制生產性之降低或品質之降低的優異效果,因此對形成ITO膜等之濺鍍用ITO靶材等之製造較為有用。 The present invention relates to a method for producing indium hydroxide or a compound containing indium hydroxide by electrolysis, wherein electrolysis is performed by setting the conductivity of the electrolytic solution to 10 mS/cm or more to cause indium hydroxide or a compound containing indium hydroxide The precipitated indium hydroxide or the compound containing indium hydroxide is washed until the conductivity of the cleaning liquid is 1 mS/cm or less, thereby suppressing deterioration in productivity or deterioration in quality. The effect is therefore useful for the production of an ITO target for sputtering such as an ITO film.

又,本發明係於電解槽中將陰極板及作為原料之銦金屬之陽極板隔有間隔而交替地排列,對該陰極板及陽極板之間供給電解液,藉由電解而製造氫氧化銦粉末的方法,其中,使氫氧化銦粒子析出至電解液中,在浸漬於電解液中之陽極板成為初始重量之20%~80%之階段中止電解,取出使用完之陽極板,使該使用完之陽極板熔解並且補充銦金屬並加以鑄造,重新製作陽極板,使用該重新製作之陽 極板開始電解,使電解液中析出氫氧化銦粒子,結果,可抑制因電解導致的氫氧化銦粉末之製造方法中產生之附著,且可防止於陰極之表面生成銦金屬,藉此可抑制生產性之降低。該方法對形成ITO膜之濺鍍用ITO靶材之製造較為有用。 Further, in the present invention, the cathode plate and the anode plate of the indium metal as a raw material are alternately arranged in an electrolytic cell, and an electrolytic solution is supplied between the cathode plate and the anode plate to produce indium hydroxide by electrolysis. In the method of powder, the indium hydroxide particles are precipitated into the electrolytic solution, and the electrolysis is stopped at a stage where the anode plate immersed in the electrolytic solution becomes 20% to 80% of the initial weight, and the used anode plate is taken out to make the use. After the anode plate is melted and replenished with indium metal and cast, the anode plate is re-made, and the re-made yang is used. Electrolysis is started in the electrode plate to precipitate indium hydroxide particles in the electrolytic solution. As a result, adhesion due to the production method of the indium hydroxide powder due to electrolysis can be suppressed, and indium metal can be prevented from being formed on the surface of the cathode, thereby suppressing Reduced productivity. This method is useful for the production of an ITO target for sputtering of an ITO film.

進而,本發明係一種藉由電解而進行之氫氧化銦或含有氫氧化銦之化合物之製造方法,其係藉由電解而製造氫氧化銦或含有氫氧化銦之化合物的方法,其特徵在於:於電解槽中將陰極板與作為原料之銦或銦合金之陽極板隔有間隔而交替地排列,於該陰極板與陽極板之間且為各陰極板及陽極板之一側緣之附近位置,配置向陰極板及陽極板之另一側緣供給電解液之噴嘴,對自該噴嘴之開口部流出之電解液之液流進行調節,使其於電解槽中之各陰極板與陽極板之間回流,從而使氫氧化銦或含有氫氧化銦之化合物析出至電解液中。於藉由電解法而製造氫氧化銦或含有氫氧化銦之化合物時,可抑制氫氧化銦或含有氫氧化銦之化合物附著於陽極之表面,且可防止於陰極之表面生成銦或銦合金,藉此具有可抑制生產性之降低的優異效果,因此對形成ITO膜之濺鍍用ITO靶材之製造較為有用。 Further, the present invention relates to a method for producing indium hydroxide or a compound containing indium hydroxide by electrolysis, which is a method for producing indium hydroxide or a compound containing indium hydroxide by electrolysis, characterized in that: The cathode plate is alternately arranged with the anode plate of the indium or indium alloy as a raw material in an electrolytic cell, and is disposed between the cathode plate and the anode plate and adjacent to one side edge of each of the cathode plate and the anode plate. Providing a nozzle for supplying an electrolyte to the other side edge of the cathode plate and the anode plate, and adjusting the flow of the electrolyte flowing out from the opening of the nozzle to make the cathode plate and the anode plate in the electrolytic cell The mixture is refluxed to precipitate indium hydroxide or a compound containing indium hydroxide into the electrolytic solution. When indium hydroxide or a compound containing indium hydroxide is produced by an electrolytic method, it is possible to prevent indium hydroxide or a compound containing indium hydroxide from adhering to the surface of the anode, and to prevent formation of indium or an indium alloy on the surface of the cathode. This has an excellent effect of suppressing a decrease in productivity, and therefore is useful for the production of an ITO target for sputtering of an ITO film.

圖1係表示自銦製造氫氧化銦之電解步驟之流程之圖。 Fig. 1 is a view showing the flow of an electrolysis step of producing indium hydroxide from indium.

圖2係表示於為了提高電解之生產效率而提高電流密度之情形時,雜質濃縮於銦陽極(anode)板表面之情況之圖。 Fig. 2 is a view showing a state in which impurities are concentrated on the surface of an indium anode plate in the case where the current density is increased in order to increase the production efficiency of electrolysis.

圖3係於電解槽中將陽極(anode)板與陰極(cathode)板隔有間隔而配置,將供給電解液之噴嘴之供給口配置於電解槽之上部而向電解槽供給電解液的先前之電解裝置之概略說明圖。 3 is an arrangement in which an anode plate and a cathode plate are spaced apart from each other in an electrolytic cell, and a supply port of a nozzle for supplying an electrolytic solution is disposed in an upper portion of the electrolytic cell to supply an electrolyte solution to the electrolytic cell. A schematic illustration of the electrolysis unit.

圖4係於電解槽中將陽極(anode)板與陰極(cathode)板隔有間隔而配置,並且將供給電解液之噴嘴之供給口配置於電解槽中之下側且為各陰極板與陽極板之間之一側緣,而使電解液於電解槽中回流之電解裝置之概略說明圖。 4 is an arrangement in which an anode plate and a cathode plate are spaced apart from each other in an electrolytic cell, and a supply port of a nozzle for supplying an electrolyte is disposed on a lower side of the electrolytic cell and is a cathode plate and an anode. A schematic illustration of an electrolysis device for recirculating electrolyte in an electrolytic cell with one side edge between the plates.

圖5係示意性地表示使用圖4之裝置之情形時的液流之圖。 Fig. 5 is a view schematically showing a flow of liquid when the apparatus of Fig. 4 is used.

圖6係於電解槽中將陽極(anode)板與陰極(cathode)板隔有間隔而配置,並且將供給電解液之2段噴嘴之供給口配置於電解槽中之下側及上側且為各陰極板與陽極板之間之一側緣而使電解液於電解槽中回流的電解裝置之概略說明圖。 6 is an arrangement in which an anode plate and a cathode plate are spaced apart from each other in an electrolytic cell, and a supply port of a two-stage nozzle for supplying an electrolytic solution is disposed on a lower side and an upper side of the electrolytic cell and is each A schematic view of an electrolysis apparatus for returning an electrolyte solution to an electrolytic cell by a side edge between the cathode plate and the anode plate.

圖7係示意性地表示使用圖6之裝置之情形時之液流之圖。 Fig. 7 is a view schematically showing a flow of liquid when the apparatus of Fig. 6 is used.

圖8係示意性地表示使用對於圖7而改變上部之噴嘴之位置的裝置之情形時之液流之圖。 Fig. 8 is a view schematically showing a flow of a liquid in the case of using a device for changing the position of the upper nozzle of Fig. 7.

圖9係於電解槽中將陽極(anode)板及陰極(cathode)板隔有間隔而配置,將供給電解液之3段噴嘴之供給口配置於電解槽中之下側、中段位置、上側且為各陰極板與陽極板之間之一側緣而使電解液於電解槽中回流的電解裝置之概略說明圖。 9 is an arrangement in which an anode plate and a cathode plate are arranged at intervals in an electrolytic cell, and a supply port of a three-stage nozzle for supplying an electrolytic solution is disposed in a lower side, a middle position, and an upper side of the electrolytic cell; A schematic view of an electrolysis apparatus for refluxing an electrolytic solution in an electrolytic cell for one side edge between each of the cathode plate and the anode plate.

圖10係示意性地表示使用圖9之裝置之情形時的液流之圖。 Fig. 10 is a view schematically showing a flow of liquid when the apparatus of Fig. 9 is used.

Claims (17)

一種藉由電解進行之氫氧化銦或含有氫氧化銦之化合物的製造方法,其係藉由電解而製造氫氧化銦或含有氫氧化銦之化合物的方法,其特徵在於:將電解液之導電度設為10mS/cm以上進行電解,使氫氧化銦或含有氫氧化銦之化合物於電解液中析出,進而對析出之氫氧化銦或含有氫氧化銦之化合物進行清洗直至該清洗液之導電度成為1mS/cm以下。 A method for producing indium hydroxide or a compound containing indium hydroxide by electrolysis, which is a method for producing indium hydroxide or a compound containing indium hydroxide by electrolysis, characterized in that the conductivity of the electrolyte is Electrolysis is performed at 10 mS/cm or more, and indium hydroxide or a compound containing indium hydroxide is precipitated in the electrolytic solution, and the precipitated indium hydroxide or the compound containing indium hydroxide is washed until the conductivity of the cleaning liquid becomes 1 mS/cm or less. 如申請專利範圍第1項之藉由電解進行之氫氧化銦或含有氫氧化銦之化合物的製造方法,其中,清洗至析出之氫氧化銦或含有氫氧化銦之化合物的清洗液之導電度成為0.1mS/cm以下。 A method for producing an indium hydroxide or a compound containing indium hydroxide by electrolysis according to the first aspect of the patent application, wherein the conductivity of the cleaning solution which is washed to precipitated indium hydroxide or a compound containing indium hydroxide is 0.1 mS/cm or less. 一種藉由電解進行之氫氧化銦粉末的製造方法,其係藉由電解而製造氫氧化銦粉末的方法,其特徵在於:使氫氧化銦粒子自陽極析出至電解液中,於陽極板之重量成為陽極初始重量之20%~80%之階段中止電解,取出使用完之陽極板,使該使用完之陽極板熔解並且補充銦金屬而加以鑄造,從而重新製作陽極板,使用該重新製作之陽極板開始電解,而使氫氧化銦粒子析出至電解液中。 A method for producing an indium hydroxide powder by electrolysis, which is a method for producing an indium hydroxide powder by electrolysis, characterized in that an indium hydroxide particle is precipitated from an anode into an electrolytic solution at a weight of an anode plate The electrolysis is stopped at a stage of 20% to 80% of the initial weight of the anode, and the used anode plate is taken out, the used anode plate is melted and indium metal is replenished and cast, thereby re-forming the anode plate, and the re-made anode is used. The plate begins to electrolyze, and the indium hydroxide particles are precipitated into the electrolyte. 如申請專利範圍第3項之藉由電解進行之氫氧化銦粉末的製造方法,其中,使用不鏽鋼板或鈦板作為陰極板進行電解。 A method for producing an indium hydroxide powder by electrolysis according to the third aspect of the patent application, wherein the electrolysis is carried out using a stainless steel plate or a titanium plate as a cathode plate. 如申請專利範圍第3或4項之藉由電解進行之氫氧化銦粉末的製造方法,其進一步具有下述步驟:取出析出於 電解液中之氫氧化銦漿料的步驟;將該漿料濃縮,分離成固形物成分濃縮液與固形物成分稀薄液的步驟;及將該固形物成分稀薄液分配至該電解液供給噴嘴的步驟。 A method for producing an indium hydroxide powder by electrolysis according to claim 3 or 4, further comprising the steps of: taking out the precipitate a step of concentrating the indium hydroxide slurry in the electrolyte; concentrating the slurry to separate into a solid content component concentrate and a solid content component thin liquid; and dispensing the solid matter component thin liquid to the electrolyte supply nozzle step. 如申請專利範圍第5項之藉由電解進行之氫氧化銦粉末的製造方法,其具有下述步驟:對該固形物成分濃縮液進行過濾,將該濾液分配至該電解液供給噴嘴的步驟;及對經過濾之固形物進行乾燥製成氫氧化銦粉末的步驟。 a method for producing an indium hydroxide powder by electrolysis according to the fifth aspect of the patent application, comprising the steps of: filtering the solid component concentrate, and distributing the filtrate to the electrolyte supply nozzle; And the step of drying the filtered solid matter to form an indium hydroxide powder. 一種氫氧化銦或含有氫氧化銦之化合物的電解製造裝置,其係藉由電解法而製造氫氧化銦或含有氫氧化銦之化合物的裝置,其特徵在於:於電解槽中將陰極板與作為原料的銦或銦合金之陽極板隔有間隔地交替排列,於該陰極板與陽極板之間且為各陰極板及陽極板之一側緣的附近位置,配置有朝陰極板及陽極板之另一側緣供給電解液之噴嘴,使自該噴嘴之開口部流出之電解液於電解槽中之各陰極板與陽極板之間回流,使氫氧化銦或含有氫氧化銦之化合物析出至電解液中。 An apparatus for electrolytically producing indium hydroxide or a compound containing indium hydroxide, which is an apparatus for producing indium hydroxide or a compound containing indium hydroxide by an electrolytic method, characterized in that a cathode plate is used in an electrolytic bath The anode plates of the indium or indium alloy of the raw materials are alternately arranged at intervals, and between the cathode plate and the anode plate and adjacent to one side edge of each of the cathode plate and the anode plate, a cathode plate and an anode plate are disposed. The other side edge is supplied with a nozzle for the electrolyte, and the electrolyte flowing out from the opening of the nozzle is recirculated between the cathode plates and the anode plate in the electrolytic cell to precipitate indium hydroxide or a compound containing indium hydroxide to the electrolysis. In the liquid. 如申請專利範圍第7項之氫氧化銦或含有氫氧化銦之化合物的電解製造裝置,其中,陰極板為不鏽鋼板或鈦板。 An electrolytic manufacturing apparatus of indium hydroxide or a compound containing indium hydroxide according to item 7 of the patent application, wherein the cathode plate is a stainless steel plate or a titanium plate. 如申請專利範圍第7或8項之氫氧化銦或含有氫氧化銦之化合物的電解製造裝置,其中,配置有1個或複數個自各陰極板與陽極板之間之一側緣向另一側緣供給電解液之噴嘴,使自該噴嘴之開口部流出之電解液於電解槽中之各陰極板與陽極板之間回流,使氫氧化銦或含有氫氧化銦 之化合物析出至電解液中。 An electrolytic manufacturing apparatus of indium hydroxide or a compound containing indium hydroxide according to claim 7 or 8, wherein one or a plurality of side edges from each of the cathode plates and the anode plates are disposed to the other side The nozzle for supplying the electrolyte causes the electrolyte flowing out from the opening of the nozzle to flow back between the cathode plates and the anode plate in the electrolytic cell to make indium hydroxide or contain indium hydroxide The compound is precipitated into the electrolyte. 如申請專利範圍第7至9項中任一項之氫氧化銦或含有氫氧化銦之化合物的電解製造裝置,其具有下述裝置:取出析出至電解液中之氫氧化銦或含有氫氧化銦之化合物的裝置;將該氫氧化物濃縮,分離成固形物成分濃縮液與固形物成分稀薄液的裝置;將該固形物成分稀薄液分配至該電解液供給噴嘴的裝置。 An electrolytic manufacturing apparatus for indium hydroxide or an indium hydroxide-containing compound according to any one of claims 7 to 9, which has an apparatus for taking out indium hydroxide or indium hydroxide deposited in an electrolytic solution. A device for concentrating the hydroxide, separating the solid content component concentrate and the solid content component thin liquid; and dispersing the solid content component thin liquid to the electrolyte supply nozzle. 如申請專利範圍第10項之氫氧化銦粉末之電解製造裝置,其具備對該固形物成分濃縮液進行過濾,將該濾液分配至該電解液供給噴嘴的裝置;及對經過濾之固形物進行乾燥,製造氫氧化銦粉末或含有氫氧化銦之化合物粉末的裝置。 An apparatus for electrolytically producing indium hydroxide powder according to claim 10, comprising: filtering the solid component concentrate, distributing the filtrate to the electrolyte supply nozzle; and performing the filtered solid matter A device for drying, producing an indium hydroxide powder or a compound powder containing indium hydroxide. 一種藉由電解進行之氫氧化銦或含有氫氧化銦之化合物的製造方法,其係藉由電解而製造氫氧化銦或含有氫氧化銦之化合物的方法,其特徵在於:於電解槽中將陰極板與作為原料之銦或銦合金的陽極板隔有間隔地交替排列,於該陰極板與陽極板之間且各陰極板及陽極板之一側緣之下端附近位置,配置朝陰極板及陽極板之另一側緣供給電解液之噴嘴,對自該噴嘴之開口部流出之電解液之液流進行調節,使其於電解槽中之各陰極板與陽極板之間回流,使氫氧化銦或含有氫氧化銦之化合物析出至電解液中。 A method for producing indium hydroxide or a compound containing indium hydroxide by electrolysis, which is a method for producing indium hydroxide or a compound containing indium hydroxide by electrolysis, characterized in that a cathode is provided in an electrolytic cell The plate is alternately arranged at intervals from the anode plate of the indium or indium alloy as a raw material, and is disposed adjacent to the lower end of the side edge of one of the cathode plate and the anode plate, and is disposed toward the cathode plate and the anode. The other side of the plate is supplied with a nozzle for the electrolyte, and the liquid flow of the electrolyte flowing out from the opening of the nozzle is adjusted to be refluxed between the cathode plate and the anode plate in the electrolytic cell to make indium hydroxide Or a compound containing indium hydroxide is precipitated into the electrolyte. 如申請專利範圍第12項之藉由電解進行之氫氧化銦或含有氫氧化銦之化合物的製造方法,其中,使用不鏽 鋼板或鈦板作為陰極板進行電解。 A method for producing an indium hydroxide or a compound containing indium hydroxide by electrolysis, as in claim 12, wherein stainless steel is used. The steel plate or the titanium plate is electrolyzed as a cathode plate. 如申請專利範圍第12或13項之藉由電解進行之氫氧化銦或含有氫氧化銦之化合物的製造方法,其中,配置1個或複數個自各陰極板與陽極板之間之一側緣朝另一側緣供給電解液之噴嘴,對自該噴嘴之開口部流出之電解液之各個液流進行調節,使其於電解槽中之各陰極板與陽極板之間回流,使氫氧化銦或含有氫氧化銦之化合物析出至電解液中。 A method for producing indium hydroxide or a compound containing indium hydroxide by electrolysis according to claim 12 or 13, wherein one or a plurality of side edges from each of the cathode plates and the anode plate are disposed The other side of the nozzle for supplying the electrolyte adjusts each liquid flow of the electrolyte flowing out from the opening of the nozzle to recirculate between the cathode plate and the anode plate in the electrolytic cell to make indium hydroxide or A compound containing indium hydroxide is precipitated into the electrolytic solution. 如申請專利範圍第12至14項中任一項之藉由電解進行之氫氧化銦或含有氫氧化銦之化合物的製造方法,其進一步具有下述步驟:取出析出至電解液中之氫氧化銦或含有氫氧化銦之化合物的步驟;將該氫氧化物濃縮,分離成固形物成分濃縮液與固形物成分稀薄液的步驟;將該固形物成分稀薄液分配至該電解液供給噴嘴的步驟。 A method for producing indium hydroxide or a compound containing indium hydroxide by electrolysis according to any one of claims 12 to 14, further comprising the step of: taking out indium hydroxide deposited in the electrolytic solution Or a step of containing a compound of indium hydroxide; a step of concentrating the hydroxide to separate a solid component concentrate and a solid component thinner; and dispensing the solid component diluent to the electrolyte supply nozzle. 如申請專利範圍第15項之藉由電解進行之氫氧化銦粉末或含有氫氧化銦之化合物粉末的製造方法,其具有下述步驟:對該固形物成分濃縮液進行過濾,將該濾液分配至該電解液供給噴嘴的步驟;及對經過濾之固形物進行乾燥製成氫氧化銦粉末或含有氫氧化銦之化合物粉末的步驟。 A method for producing an indium hydroxide powder or a compound powder containing indium hydroxide by electrolysis according to the fifteenth aspect of the patent application, comprising the steps of: filtering the solid component concentrate, and distributing the filtrate to The step of supplying the electrolyte to the nozzle; and the step of drying the filtered solid to form an indium hydroxide powder or a compound powder containing indium hydroxide. 如申請專利範圍第12至16項中任一項之氫氧化銦或含有氫氧化銦之化合物的製造方法,其中,以電解液之供給速度對於電流值、電解面積、時間成為0.01~100.0L.m2/A.分之方式使電解液流動。 The method for producing indium hydroxide or a compound containing indium hydroxide according to any one of claims 12 to 16, wherein the supply rate of the electrolyte is 0.01 to 100.0 L for the current value, the electrolysis area, and the time. m 2 /A. The way the electrolyte flows.
TW101121714A 2011-07-26 2012-06-18 Indium hydroxide or a compound containing indium hydroxide TWI537423B (en)

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