TW201304949A - Transparent conductive glass with high visible light transmittance and manufacturing method thereof - Google Patents

Abstract

This invention provides a transparent conductive glass with high visible light transmittance, comprising a glass substrate, a buffer layer formed on the glass substrate, and a metal base film layer structure formed on the buffer layer. The metal base film layer structure has a first metal layer, a second metal layer, and a third metal layer in sequence in the direction from the buffer layer away from the glass substrate. The first metal layer is made of the Ag with its thickness between 6 nm to 10 nm. The second metal layer is made of a second metal selected from a group composed of the following: Zn, Sn, Ti, Ni, Zn-Sn alloy, Zn-Ti Alloy, Zn-Ni alloy, Sn-Ti alloy, and Sn-Ni alloy. The third metal layer is a protective layer. This invention also provides a manufacturing method of the aforementioned transparent conductive glass.

Description

Transparent conductive glass with high visible light transmittance and manufacturing method thereof

The invention relates to a transparent conductive glass (TCG), in particular to a transparent conductive glass with high visible light transmittance and a manufacturing method thereof.

The demand for electronic products such as flat panel display (FPD), touch panel and thin film solar cell has been rising in recent years, and it is indispensable in these electronic products. The component is a non-transparent conductive glass. The most common type of transparent conductive film at this stage is nothing more than sputtering a metal oxide transparent conductive layer on a transparent glass substrate. Such as indium tin oxide (ITO), indium oxide (In ₂ O ₃ ), or fluorine-doped tin oxide (FTO). However, it is well known in the art that the characteristics of the transparent conductive glass composed of the metal oxide transparent conductive layer must be traded between the two characteristics of conductivity and transmittance; that is, It is said that when the thickness of the metal oxide transparent conductive layer is larger, the resistivity is smaller, but relatively, the transmittance of visible light is also sacrificed.

It should be further explained here that, in the current common indium tin oxide (ITO) transparent conductive layer, the production of indium (In) is scarce and the price is increasing. In addition, the ITO transparent conductive layer is required to have Good conductivity, the required thickness must exceed 100 nm. Therefore, the manufacturing cost of the ITO transparent conductive layer is very high.

Moreover, although the amount of tin (Sn) required for the FTO transparent conductive layer is rich. However, in order to make the conductivity of the FTO transparent conductive layer meet the requirements of the above electronic products, the thickness thereof must be much higher than that of the ITO transparent conductive layer. For example, an FTO transparent conductive layer with a sheet resistance of 16 Ω/□ requires a thickness of about 300 nm, and a FTO transparent conductive layer with a sheet resistance of 8 Ω/□ requires a thickness of 500 nm. about. Therefore, the material cost for manufacturing the FTO transparent conductive layer is also quite high.

According to the above description, it is found that the transparent conductive layer such as ITO and FTO can be replaced to improve the visible light transmittance of the transparent conductive glass, and the electrical characteristics thereof can meet the requirements of electronic products such as flat panel displays, touch panels and thin film solar cells. It is a subject that needs improvement in this technical field.

Accordingly, it is an object of the present invention to provide a transparent conductive glass having a high visible light transmittance.

Another object of the present invention is to provide a method for producing a transparent conductive glass having a high visible light transmittance.

Therefore, the transparent conductive glass having high visible light transmittance of the present invention comprises: a glass substrate, a buffer layer formed on the glass substrate, and a metal-based film layer structure formed on the buffer layer. . The metal base film layer structure has a first metal layer, a second metal layer and a third metal layer sequentially from the buffer layer away from the glass substrate. The first metal layer is made of Ag and has a thickness of between 6 nm and 10 nm. The second metal layer is made of a second metal selected from the group consisting of Zn, Sn, Ti, Ni, ZnSn alloy, ZnTi alloy, ZnNi alloy, SnTi alloy, and SnNi alloy. The third metal layer is a protective layer.

In addition, the method for fabricating the transparent conductive glass with high visible light transmittance of the present invention comprises the following steps:

(a) forming a buffer layer on a glass substrate;

(b) forming a metal base film layer structure on the buffer layer, the metal base film layer structure sequentially has a first metal layer, a second metal layer and a first layer from the buffer layer away from the glass substrate Three metal layers; and

(c) after the step (b), the glass substrate on which the buffer layer and the metal base film layer are formed is disposed on a substrate of a vacuum chamber to the buffer layer and the metal base film layer The structure is subjected to microwave plasma treatment, and the adhesion of the buffer layer and the metal base film layer structure is improved; wherein the first metal layer is made of Ag, and the thickness is Between 6 nm and 10 nm;

Wherein, the second metal layer is made of a second metal selected from the group consisting of Zn, Sn, Ti, Ni, ZnSn alloy, ZnTi alloy, ZnNi alloy, SnTi alloy, and SnNi alloy; Wherein the third metal layer is a protective layer; and wherein the substrate of the step (c) is made of a material selected from the group consisting of carbon fiber, graphite, and Semiconductor material.

The utility model has the advantages that the transparent conductive layer such as ITO and FTO can be replaced to enhance the visible light transmittance of the transparent conductive glass, and the electrical characteristics thereof can also meet the requirements of electronic products such as flat panel displays, touch panels and thin film solar cells.

<Detailed Description of the Invention>

The above and other technical contents, features and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments of the invention.

Referring to FIG. 1 , a preferred embodiment of the transparent conductive glass with high visible light transmittance of the present invention comprises: a glass substrate 2 , a buffer layer 3 formed on the glass substrate 2 , and a buffer layer 3 formed on the buffer layer 3 . The metal base film layer structure 4 above. The metal base film layer structure 4 has a first metal layer 41 , a second metal layer 42 and a third metal layer 43 in this order from the buffer layer 3 away from the glass substrate 2 . The first metal layer 41 is made of Ag and has a thickness of between 6 nm and 10 nm. The second metal layer 42 is made of a second metal selected from the group consisting of Zn, Sn, Ti, Ni, ZnSn alloy, ZnTi alloy, ZnNi alloy, SnTi alloy, and SnNi alloy. The third metal layer 43 is a protective layer.

Preferably, the third metal layer 43 is made of a third metal selected from the group consisting of Al, an AlTi alloy, an AlNi alloy, and an AlZn alloy; and the buffer layer 3 is selected from the group consisting of The materials of the following group are made of: Zn, ZnO, SnO ₂ , and TiO ₂ . It should be noted that the main purpose of the buffer layer 3 is to improve the adhesion between the glass substrate 2 and the first metal layer 42 of the metal base film layer structure 4, and on the other hand, to enhance the penetration of visible light. rate.

Further, the main function of the second metal layer 42 of the metal base film layer structure 4 of the present invention is to adjust the transmittance of visible light. In a specific example, the second metal layer 42 of the metal base film layer structure 4 is made of Zn. The main reason for selecting Zn is the output power required for magnetron sputtering. (output power) is low and the sputtering rate is high, so the manufacturing cost is low.

The main function of the third metal layer 43 of the metal base film layer structure 4 of the present invention is to block the diffusion of moisture and oxygen (O ₂ ) to avoid moisture, oxygen and the metal base film structure 4 . Oxidation reactions occur and affect their penetration and reliability. In a specific example, the third metal layer 43 of the metal base film layer structure 4 is made of an AlTi alloy; wherein the AlTi alloy is selected because it provides sufficient mechanical strength [eg, hardness] and Adjust the transmittance of visible light.

In order to effectively improve the transmittance of the visible light band, preferably, the thickness of the second metal layer 42 is between 15 nm and 25 nm; the thickness of the buffer layer 3 is between 15 nm and 25 nm. .

Referring to FIG. 2 and FIG. 3, a method for fabricating a transparent conductive glass with high visible light transmittance according to the preferred embodiment of the present invention includes the following steps:

(a) forming the buffer layer 3 on the glass substrate 2;

(b) forming the metal base film layer structure 4 on the buffer layer 3, the metal base film layer structure 4 having a first metal layer 41, a first order from the buffer layer 3 away from the glass substrate 2 a second metal layer 42 and a third metal layer 43;

(c) after the step (b), the glass substrate 2 on which the buffer layer 3 and the metal base film layer structure 4 are formed is disposed on a substrate 6 of a vacuum chamber 5 to the buffer layer 3. And the metal base film layer structure 4 is subjected to microwave plasma treatment, and the adhesion of the buffer layer 3 and the metal base film layer structure 4 is improved;

Wherein, the substrate 6 of the step (c) is made of a material selected from the group consisting of carbon fiber, graphite and a semiconductor material.

A semiconductor material suitable for use in the present invention is bismuth (Si). Materials such as carbon fiber, graphite, and ruthenium have high thermal conductivity; in addition, these materials have high absorptivity for microwave MW. Therefore, the microwave MW can be quickly converted into high-temperature heat energy H. The manufacturing method of the preferred embodiment of the present invention mainly comprises the carbon fiber, the graphite and the semiconductor material having the characteristics of rapidly absorbing the microwave MW to convert the absorbed microwave MW into thermal energy H, and rapidly dispersing and transferring the thermal energy H. The microwave MW is rapidly absorbed by the substrate 6 and converted into thermal energy H, and is rapidly dispersed by the substrate 6 to transfer thermal energy H to the buffer layer 3 and the metal base film layer structure 4 on the glass substrate 2. Thereby, the microwave MW rapidly absorbs the converted thermal energy H through the substrate 6, and provides good mutual diffusion for the atoms between the glass substrate 2, the buffer layer 3 and the metal base film layer structure 4 interface. (interdiffusion) and rapid microwave thermal sintering (sintering), thereby improving the adhesion between the three.

In order to efficiently disperse and transfer the thermal energy H generated by the substrate 6 heated by the microwave MW to the buffer layer 3 and the metal base film layer structure 4, preferably, the area of the substrate 6 is viewed from a plan view. The area of the buffer layer 3 on the glass substrate 2 is greater than or equal to the area of the metal base film layer structure 4, and the area of the substrate 6 overlaps with the area of the buffer layer 3 on the glass substrate 2, and The areas of the metal base film layer structure 4 overlap each other.

It should be noted here that when the working pressure is small (for example, 0.05 Torr), the vacuum chamber 5 is required to generate microwave plasma for a longer period of time (ie, it is less prone to generate microwave plasma); When the working pressure is larger (for example, 5 Torr), the vacuum chamber 5 is more likely to generate microwave plasma. In addition, in order to avoid the problem that the vacuum chamber 5 is oxidized due to being under normal pressure; therefore, preferably, when the step (c) is performed, the operation of the vacuum chamber 5 The pressure is 0.5 Torr or less.

Preferably, the microwave plasma treatment of the step (c) is to provide an output power between 750 W and 2000 W via a power supply. It should also be noted that the output power provided by the power supply is mainly related to the speed of generating the microwave plasma; in other words, the higher the output power, the faster the generation of the microwave plasma; It can be understood from the above description that the lower the working pressure, the more difficult it is to generate microwave plasma, and the working pressure is mainly related to the pumping capacity of the pumping system (eg, pump), and therefore, it is suitable for the step (c) of the present invention. The lower limit of the working pressure of the vacuum chamber 5 depends on the pumping capacity of the pumping system, and is suitable for the step of the present invention as long as the working pressure of the vacuum chamber 5 can be lowered to a high vacuum state ( c). However, it should be noted that when the vacuum chamber 5 of the step (c) is in a high vacuum state, the output power provided by the vacuum chamber 5 is not relatively increased, or the time required for the step (c) needs to be relatively extended. To achieve the purpose of improving the hydrophobicity of the surface.

Preferably, the plasma source of the microwave plasma treatment of the step (c) is nitrogen (N ₂ ), argon (Ar), or acetylene (C ₂ H ₂ ).

It can be seen from the foregoing description that the third metal layer 43 of the metal base film layer structure 4 of the preferred embodiment of the present invention is preferably made of a third metal selected from the group consisting of Al, AlTi. The alloy, the AlNi alloy, and the AlZn alloy; therefore, a surface of the third metal layer 43 is hydrophobic after a predetermined time after the microwave plasma treatment. It should be noted here that the predetermined time is defined in the present invention to be 30 minutes or more.

It should be noted that the metal base film layer structure 4 of the present invention is made by magnetron sputtering. Those skilled in the art of sputtering know that when the base pressure in the sputtering chamber is too large, traces of moisture and oxygen will remain in the splash chamber, so even if it is plated The coating is a pure metal film, and the pure metal film may also contain a trace amount of oxygen. By integrating the above description, it is understood that the metal base film layer structure 4 of the present invention allows a trace amount of oxygen component to be contained.

<Specific Example 1 (E1)>

A specific example 1 (E1) of the transparent conductive glass having a high visible light transmittance of the present invention is carried out according to the following scheme.

The specific example 1 (E1) of the present invention uses a magnetron sputtering system to sequentially form a buffer layer on a glass substrate and sequentially has a first metal layer, a second metal layer and a third metal. The metal base film layer structure of the layer. In the specific example 1 (E1) of the present invention, the glass substrate is a glass of the type Eagle 2000 manufactured by Corning Incorporated, and the thickness and area of the glass substrate are 700 μm and 10 cm×10 cm, respectively; The buffer layer and the first, second and third metal layers of the metal base film layer structure are a Zn layer, an Ag layer, a Zn layer and an AlTi alloy layer, respectively, and have thicknesses of 20 nm, 7 nm, and 20, respectively. Nm and 10 nm.

Further, the glass substrate on which the buffer layer and the metal base film layer are formed is placed on a carbon fiber cloth in a vacuum chamber with a working pressure of 0.5 Torr, and the buffer layer is output at an output of 1100 W and The metal base film structure was subjected to a 50 second nitrogen microwave plasma treatment. In the specific example 1 (E1) of the present invention, the carbon fiber cloth is a carbon fiber cloth of a type 3K T300B 1x1 plain weave 210 g/m ² which is produced by Toray Industries, Japan.

<Specific example 2 (E2)>

A specific example 2 (E2) of the transparent conductive glass having a high visible light transmittance of the present invention is substantially the same as the specific example 1 (E1), and is different in that the metal base of the specific example 2 (E2) One of the film layers has a thickness of 8 nm.

<Specific example 3 (E3)>

A specific example 3 (E3) of the transparent conductive glass having a high visible light transmittance of the present invention is substantially the same as the specific example 1 (E1), and is different in that the metal base of the specific example 3 (E3) One of the film layers has a thickness of 9 nm.

<Analysis data>

Referring to the visible light transmittance graph shown in Fig. 4, the average transmittance of the blank glass substrate of the specific example 1 (E1) of the present invention in the visible light band is as close as 92%. The specific transmittance of the specific example 1 (E1) in the visible light band (400 nm to 700 nm) before the microwave microwave plasma treatment is about 84%, but the transmittance curve in the 400 nm to 500 nm band is not flat. a state in which the transparent conductive glass cannot uniformly transmit transparent white light through the light sources of the three primary colors of red (R), green (G), and blue (B), that is, the specific example 1 (E1) is in the microwave plasma. The transparent conductive glass before treatment will exhibit a color other than transparent white light. In contrast, the maximum transmittance and the average transmittance of the visible light band of the specific example 1 (E1) after the microwave microwave plasma treatment were 88% and approached 85%, respectively, and the transmittance curve showed a flat state; Thus, the transparent conductive glass of this specific example 1 (E1) of the present invention can exhibit a super-clear state by transparent white light.

In addition, the metal base film structure of the specific example 1 (E1) of the present invention before the nitrogen microwave plasma treatment and the nitrogen microwave plasma treatment is obtained by a hand-held four-point probe measurement. The sheet resistance is 33.5 Ω/□ and 28.4 Ω/□, respectively.

Referring to the visible light transmittance graph shown in Fig. 5, the average transmittance of the blank glass substrate of the specific example 2 (E2) of the present invention in the visible light band is as close as 92%. The average transmittance of the specific example 2 (E2) in the visible light band before the nitrogen microwave plasma treatment is about 84%, but the transmittance curve in the 400 nm to 500 nm band is not flat, therefore, In the specific example 2 (E2), the transparent conductive glass before the microwave plasma treatment will exhibit a color other than transparent white light. Referring again to FIG. 5, the maximum transmittance and the average transmittance of the specific example 2 (E2) in the visible light band after the microwave microwave plasma treatment are approaching 87% and 85%, respectively, and the transmittance curve is flat. The transparent conductive glass of the specific example 2 (E2) of the present invention can be made to exhibit an ultra-clear state by transparent white light.

Referring to the visible light transmittance curve shown in Fig. 6, it can be seen that the average visible light transmittance of the FTO glass of the model TEC 7 produced by Nippon Sheet Glass Co., Ltd. is about 76%, and the transmittance is The curve is not flat; the average visible light transmittance of ITO glass from Merk is about 83%, and the transmittance curve is also jittery. 5, the average visible light transmittance of the specific example 2 (E2) of the present invention before the nitrogen microwave plasma treatment has reached 84%. Referring to FIG. 6, the specific example 2 (E2) of the present invention is applied to the nitrogen microwave. The average transmittance of the visible light band after the plasma treatment is not only close to 85%, but the transmittance curve is flat.

In addition, Nippon's FTO glass has a sheet resistance of 8 Ω/□ obtained in its specifications, and Merck's ITO glass has a sheet resistance of 9 Ω/□ in its specification, whereas the specific example 2 (E2 of the present invention) The metal-based film structure before the nitrogen microwave plasma treatment, the sheet resistance obtained by the hand-held four-point probe measurement is 13.4 Ω / □, and the sheet resistance obtained after the microwave plasma treatment has been measured. Dropped to 8.2 Ω/□. Compared with the transparent conductive glass produced by Nippon and Merck, the specific example 2 (E2) of the present invention has not only a flat transmittance curve but also an average transmittance of 85%; moreover, the specific example 2 of the present invention ( The sheet resistance of E2) has also dropped to 8.2 Ω/□.

Referring to the visible light transmittance curve shown in Fig. 7, the average transmittance of the blank glass substrate of the specific example 3 (E3) of the present invention in the visible light band is as close as 92%. The average transmittance of the specific example 3 (E3) in the visible light band before the nitrogen microwave plasma treatment is about 84%, but the transmittance curve in the 400 nm to 500 nm band is not flat, therefore, In the specific example 3 (E3), the transparent conductive glass before the microwave plasma treatment will exhibit a color other than transparent white light. Referring again to FIG. 7, since the thickness of the first metal layer (Ag) of the specific example 3 (E3) is slightly larger than the specific examples (E1 to E2), the average of the visible light band after the microwave microwave plasma treatment The transmittance is slightly decreased to 84%, but the transmittance curve still exhibits a flat state; therefore, the transparent conductive glass of the specific example 3 (E3) of the present invention can be rendered ultra-transparent by transparent white light. The way.

In addition, in the specific example 3 (E3) of the present invention, the metal base film layer structure before the nitrogen microwave plasma treatment, the sheet resistance obtained by the hand-held four-point probe measurement is 10.1 Ω/□, which is in the microwave plasma. The sheet resistance measured after the treatment has dropped to 7.2 Ω/□.

It is confirmed by the electrical analysis results of the above specific examples that the specific examples (E1 to E3) of the present invention are subjected to nitrogen microwave plasma treatment, and the microwave rapidly absorbed by the carbon fiber cloth of each specific example has been converted into heat energy and utilized at the same time. The carbon fiber cloth itself has a high heat transfer coefficient to rapidly disperse and transfer the heat energy to each metal base film layer structure, resulting in a denser arrangement of atoms in each metal base film layer structure, and thus the internal electrons are continuously turned on. Flows in the path and the sheet resistance drops.

Referring to the scanning electron microscope (SEM) surface topography image shown in FIG. 8, the specific structure 2 (E2) of the present invention has a surface structure of about 20 nm to 30 before the microwave microwave plasma treatment. Nanoparticles around nm; in contrast, the SEM surface topography image shown in FIG. 9 shows that the surface structure of the specific example 2 (E2) of the present invention after nitrogen microwave plasma treatment is about 100 nm to 120 nm. Nano particles. The surface of the specific example 2 (E2) is subjected to a nitrogen microwave plasma treatment, and a lotus effect is generated due to a nanoparticle having a size of 100 nm to 120 nm, thereby making the surface of the specific example 2 (E2) It is hydrophobic after nitrogen microwave plasma treatment, so it is not conducive to oxidation reaction with water vapor to affect its visible light transmittance.

In summary, the transparent conductive glass with high visible light transmittance and the manufacturing method thereof can replace the transparent conductive layer such as ITO and FTO to enhance the visible light transmittance of the transparent conductive glass, and at the same time make the electrical characteristics conform to the plane. The requirements of the present invention can be achieved by the requirements of electronic products such as displays, touch panels, and thin film solar cells.

The above is only the preferred embodiment and the specific examples of the present invention, and the scope of the invention is not limited thereto, that is, the simple equivalent change according to the scope of the invention and the description of the invention. And modifications are still within the scope of the invention patent.

2. . . glass substrate

3. . . The buffer layer

4. . . Metal base film structure

41. . . First metal layer

42. . . Second metal layer

43. . . Third metal layer

5. . . Vacuum chamber

6. . . Base

MW. . . microwave

H. . . Thermal energy

1 is a front elevational view showing a preferred embodiment of a transparent conductive glass having a high visible light transmittance according to the present invention;

2 is a flow chart illustrating a method of fabricating the preferred embodiment of the present invention;

3 is a partial enlarged view of a step (c) of FIG. 2, illustrating the transfer relationship between the microwave and a substrate, a glass substrate, and a metal-based film layer structure in the manufacturing method of the preferred embodiment of the present invention. ;

4 is a graph of visible light transmittance, illustrating visible light transmittance of a specific example 1 (E1) of the transparent conductive glass having high visible light transmittance of the present invention;

5 is a graph of visible light transmittance, illustrating visible light transmittance of a specific example 2 (E2) of the transparent conductive glass having high visible light transmittance of the present invention;

6 is a graph of visible light transmittance, illustrating a comparison between visible light transmittance of the specific example 2 (E2) of the present invention and transparent conductive glass purchased from each of the prior art;

7 is a graph of visible light transmittance, illustrating visible light transmittance of a specific example 3 (E3) of the transparent conductive glass having high visible light transmittance of the present invention;

Figure 8 is a SEM surface topography showing the surface structure of the specific example 2 (E2) of the present invention before microwave plasma treatment;

Figure 9 is a SEM surface topography showing the surface structure of this specific example 2 (E2) of the present invention after microwave plasma treatment.

2. . . glass substrate

3. . . The buffer layer

4. . . Metal base film structure

41. . . First metal layer

42. . . Second metal layer

43. . . Third metal layer

5. . . Vacuum chamber

6. . . Base

Claims (10)

A transparent conductive glass with high visible light transmittance, comprising: a glass substrate; a buffer layer formed on the glass substrate; and a metal base film layer structure formed on the buffer layer, away from the buffer layer The direction of the glass substrate sequentially has a first metal layer, a second metal layer and a third metal layer; wherein the first metal layer is made of Ag and has a thickness of 6 nm to 10 nm. Wherein the second metal layer is made of a second metal selected from the group consisting of Zn, Sn, Ti, Ni, ZnSn alloy, ZnTi alloy, ZnNi alloy, SnTi alloy, and SnNi An alloy; and wherein the third metal layer is a protective layer. The transparent conductive glass having high visible light transmittance according to claim 1, wherein the third metal layer is made of a third metal selected from the group consisting of Al and AlTi alloys. An AlNi alloy, and an AlZn alloy; the buffer layer is made of a material selected from the group consisting of Zn, ZnO, SnO ₂ , and TiO ₂ . The transparent conductive glass with high visible light transmittance according to claim 1, wherein the thickness of the second metal layer is between 15 nm and 25 nm; the thickness of the buffer layer is between 15 nm. Between ~25 nm. A method for fabricating a transparent conductive glass with high visible light transmittance, comprising the steps of: (a) forming a buffer layer on a glass substrate; (b) forming a metal base film layer structure on the buffer layer, the metal base The film structure has a first metal layer, a second metal layer and a third metal layer sequentially from the buffer layer away from the glass substrate; and (c) after the step (b), the formation The glass substrate having the buffer layer and the metal base film layer structure is disposed on a substrate of a vacuum chamber to apply microwave plasma treatment to the buffer layer and the metal base film layer structure, and to lift the buffer layer and Adhesion of the metal base film layer structure; wherein the first metal layer is made of Ag and has a thickness of between 6 nm and 10 nm; wherein the second metal layer is selected from the group consisting of a second metal of the group consisting of: Zn, Sn, Ti, Ni, ZnSn alloy, ZnTi alloy, ZnNi alloy, SnTi alloy, and SnNi alloy; wherein the third metal layer is a protective layer; Wherein the base of the step (c) is a group selected from the group consisting of the following Made of materials: carbon fiber, graphite and semiconductor materials. The method for fabricating a transparent conductive glass having a high visible light transmittance according to the fourth aspect of the invention, wherein the area of the substrate is greater than or equal to the area of the buffer layer on the glass substrate, and is greater than or equal to the structure of the metal base film layer. The area of the substrate overlaps with the area of the buffer layer on the glass substrate and overlaps with the area of the metal base film layer structure. A method for producing a transparent conductive glass having a high visible light transmittance according to the fourth aspect of the invention, wherein the vacuum chamber has a working pressure of 0.5 Torr or less when the step (c) is performed. The method for fabricating a transparent conductive glass with high visible light transmittance according to claim 6 , wherein the microwave plasma treatment of the step (c) is provided between 750 W and 2000 W via a power supply. Output power. A method for producing a transparent conductive glass having a high visible light transmittance according to the fourth aspect of the invention, wherein the semiconductor material is germanium. A method for producing a transparent conductive glass having a high visible light transmittance according to the fourth aspect of the invention, wherein the third metal layer is made of a third metal selected from the group consisting of: Al, An AlTi alloy, an AlNi alloy, and an AlZn alloy, and a surface of the third metal layer is hydrophobic after a predetermined time after the microwave plasma treatment; the buffer layer is composed of a group selected from the group consisting of Made of materials: Zn, ZnO, SnO ₂ , and TiO ₂ . The method for fabricating a transparent conductive glass with high visible light transmittance according to claim 4, wherein the thickness of the second metal layer is between 15 nm and 25 nm; the thickness of the buffer layer is between Between 15 nm and 25 nm.