TW201251129A - Manufacturing method of LED device - Google Patents

Manufacturing method of LED device Download PDF

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Publication number
TW201251129A
TW201251129A TW100122445A TW100122445A TW201251129A TW 201251129 A TW201251129 A TW 201251129A TW 100122445 A TW100122445 A TW 100122445A TW 100122445 A TW100122445 A TW 100122445A TW 201251129 A TW201251129 A TW 201251129A
Authority
TW
Taiwan
Prior art keywords
led
wafer
guiding member
manufacturing
base member
Prior art date
Application number
TW100122445A
Other languages
Chinese (zh)
Inventor
Seung-Min Hong
Soo-Jin Lee
Original Assignee
Protec Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Protec Co Ltd filed Critical Protec Co Ltd
Publication of TW201251129A publication Critical patent/TW201251129A/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502Wavelength conversion materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0041Processes relating to semiconductor body packages relating to wavelength conversion elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

A manufacturing method of a LED device is provided to spread a fluorescent liquid made by mixing resin paste and fluorescent powder on a LED chip. The method includes the following steps: (a) preparing a flat shaped base, (b) preparing a sheet-shaped guide member having a plurality of chip holes; (c) disposing the guide member and the LED chips on the base in a manner that the LED chips is received in each of the chip holes, (d) distributing the fluorescent liquid towards each of the chip holes of the guide member after steps (a), (b) and (c), and (e) removing the guide member after step (d).

Description

201251129 mwpit 六、發明說明: 【發明所屬之技術領域】 本發明是有關於一種led元件製造方法,更具體而 且,是有關於這樣的LED元件製造方法··對從晶片狀態切 斷形成的各個LED晶片有效地塗敷混合有螢光物質的液 狀合成樹脂,使其具有所需的色座標值。 【先前技術】 通常’ LED晶片發射藍色或紅色光。如果對這種LED 晶片塗佈將粉狀(粉末狀態)螢光物質混合於液狀合成樹 脂而形成的螢光液,則根據螢光物質的量,在LED元件產 生的光的顏色會發生變化。 例如,從發射藍色光的LED晶片發射的光在透過螢光 液的過程中,不與螢光物質衝突的光則會保持原來的藍 色。而與螢光液中含有的螢光物質粒子衝突的光,其作為 2次光則會發射波長更短的黃色光。如上所述,保持i次 光的顏色的藍色光和波長變短的黃色光混合在一起發射整 體呈現白色色調的光。根據螢光的組成及特性,在LED元 件發射的光的顏色特性不同。 即,通過對封裝有LED晶片的外殼適量分配含有螢光 物質的螢光液,可製造出白色光或其他各種顏色的LED元 件。 通常’根據 1931CIE (International Commission cm201251129 mwpit VI. Description of the Invention: [Technical Field] The present invention relates to a method of manufacturing a LED element, and more particularly to a method of manufacturing such an LED element, which is formed by cutting off each of the LEDs formed from the state of the wafer. The wafer is effectively coated with a liquid synthetic resin mixed with a fluorescent substance to have a desired color coordinate value. [Prior Art] Usually the 'LED wafer emits blue or red light. When such a LED wafer is coated with a fluorescent liquid formed by mixing a powdery (powder state) fluorescent substance with a liquid synthetic resin, the color of light generated in the LED element changes depending on the amount of the fluorescent substance. . For example, light emitted from an LED chip that emits blue light will remain in its original blue color during transmission through the phosphor without colliding with the phosphor. Light that collides with the fluorescent substance particles contained in the fluorescent liquid emits yellow light having a shorter wavelength as the secondary light. As described above, the blue light that maintains the color of the i-order light and the yellow light whose wavelength becomes shorter are mixed together to emit light that exhibits a white tone as a whole. The color characteristics of the light emitted from the LED elements are different depending on the composition and characteristics of the fluorescent light. That is, white light or other various color LED elements can be produced by appropriately distributing a fluorescent material containing a fluorescent substance to a casing in which an LED chip is packaged. Usually 'based on 1931 CIE (International Commission cm

Illumination)的色座標上的值表示LED元件的光特性。根 據螢光物質的塗佈量,在LED晶片產生的光的色座標值不 4 201251129 J88U4pit 同。LED元件的色座標值是LED元件的重要規格之一, 如果LED元件的色鍊值超的顧,則視為 品0 如上,述,董子LED晶片塗佈準確量的螢光液非常重The value on the color coordinates of Illumination represents the light characteristics of the LED elements. According to the coating amount of the fluorescent substance, the color coordinate value of the light generated in the LED wafer is not the same as 201251129 J88U4pit. The color coordinate value of the LED component is one of the important specifications of the LED component. If the color chain value of the LED component is too high, it is regarded as the product. As described above, the Dongzi LED wafer is coated with an accurate amount of the fluorescent liquid.

要特別疋,就LED晶片製程特性而言,每個形成LED 晶片的晶片或各個晶片批次(lot)的LED晶片的特性不 同因此需要每次對LED晶片塗佈與其特性相應的適當量 的螢光液。 1藉由控制分配螢光液的泵’可調節塗佈在各個 替替:曰二光液量。但是’就泵的結構而言,細微調 的螢光ί小單位存在極限’因此難以增減非常微量 出規因U 在利縣分配螢光液的過程中,有時還 出現因混入軋泡而發生不良的情況。 體狀態’因此存在如下問題點:塗佈到 個位rliirr雜,或目自衫祕力蹄性而各 产、兄下基ϋ ; ED晶片上的螢光液厚度不同。在這種 ^不固;^,^下_點:在LED元件產生的光的色座標 同。 或可照射到光的各她置上的光的色座標值不 【發明内容】 的在解決如上所料提出的,其目 節塗佈在LED晶片上的料㈣Μ /製仏方法·易於調 保持為蚊。 ㈣先㈣做,並且綠將該厚度 201251129 jjoowpn 為了達到這種目的’本發明的LED元件製造方法是對 LED晶#錄綠合成難巾混合有錄縣物質的榮 光液而製造LED元件的方法,其舰在於,包括如下步 驟:(a)準備平板形狀的基底構件;(b)準備形成有多個 晶片孔(chip hole)的薄板形態的導引 上述刪片收容於上述導引構件的各1晶=内為= 底構件上配置上料引構件和多個LED晶片;⑷完成上 述(a)、(b)、(c)步驟後,向上述導引構件的各個晶片孔 分配上述螢光液;以及⑷完成上述⑷步驟後,從上 述基底構件去除上述導引構件。 本發明的LED元件製造方法具有如下效果1於細微 調整塗敷在LED晶片上的螢光液的厚度。 另外,本發明的LED元件製造方法具有如下效果:易 於將塗敷在LED晶片上的螢光液的厚度保持為固定。 【實施方式】 下面’參照附圖詳細說明本發明的理想實施例。 本發明是有關於對led晶片塗佈將粉狀螢光物質和 液狀合成樹脂混合製作的螢光液而製造LED元件的製造 方法。 圖1至圖6是用於說明本發明的LED元件製造方法的 第1實施例的圖。 首先,如圖1所示,執行準備平板形狀的基底構件 (110)的步驟((a)步驟)。基底構件(110)可由金屬或 合成樹脂材質的平板形成,也可以構成為合成樹脂薄膜形 6 201251129 38804pif 態。本實施例中,舉例說明了形成為合成樹脂薄膜形態, 在基底構件(110)上面塗敷黏著性材質,以便下述的導引 構件(120)和LED晶片(1)能夠附著於該基底構件(11〇) 上。 其次’如圖2所示,執行準備導引構件(12〇)的步驟 j(b)步驟)。導引構件(12〇)形成為薄板形態,形成有 多個晶片孔(chip hole; 122)。第1實施例的導引構件(12〇) 中,晶片孔(122)的上側由網形態的遮罩(121)覆蓋。 導引構件(120)的厚度形成為大於LED晶片(i)的高度^ 晶片孔(122)的尺寸形成為大於LED晶片(〇週邊尺寸。 在如上所述般已準備基底構件(11〇)和導引構件(12〇) 的狀態下’執行以各個LED晶片⑴收容於導引構件(12〇 ) 的各晶片孔(122)的方式,在基底構件⑽)上配置導 引構件(120)和多個LED晶片⑴的步驟((c)步驟)。 第1實施例中,(c)步驟按照如下方法執行:在基底 ,件(110)上配置多個LED晶片⑴,並以各個腳晶 (1)收容於各個導引構件(12〇)的晶片孔(122)内的 方式,在基底構件(110)上配置導引構件(12〇)。即,如 圖3所示,首先在基底構件〇10)的對應於導引構件 的晶片孔(122)的位置附著LED晶片⑴。接著,如圖 =不,在基底構件⑽)上附著導引構件⑽)。此時, 口導引構件(12G)的各個晶片孔(122)和led =目對應,事先附著於基絲件(i〗G)上 : 於導引構件(m)的晶片孔⑽)内分別各收^片個 201251129 joouHyn 如上所述,完成(a)、(b)、(c)步驟後,如圖5所示 般利用具備有泵(50)的分配器’執行向導引構件(12〇) 的各晶片孔U22)分配螢光液⑴的步驟((d)步驟)。 向晶片孔(122)分配合成樹脂溶液中混合有螢光體粉末的 螢光液(2)。合成樹脂溶液可使用混合主劑和硬化7 狀石夕。如圖5所示,螢光液⑺以填滿晶片孔(122)形 成的空間而由螢光液(2)覆蓋LED晶片(1)的方式進行 分配。如上所述,如果在網形態的遮罩(121)上分配螢光 液U),則螢光液(2)通過遮罩(121),流入其下側的晶 片孔(122)。通過在網形態的遮罩(121)上塗佈螢光液(2), 可防止在填充到晶片孔(122)的螢光液(2)中產生氣泡。 利用泵(50)調節螢光液(2)的分配量,使螢光液(2) 分配為準確地填滿晶片孔(122)的程度,或者分配為稍微 溢出晶片孔(122)的程度。如圖5所示,本實施例中舉例 說明螢光液(2)分配為稍微溢出晶片孔(122)的程度的 情況。 另一方面’本實施例中,導引構件(120)以晶片孔(122) 的内側面和LED晶片(1)的外侧面相互隔開距離的方式 形成。即’晶片孔(122)的内徑形成為大於LED晶片(1) 的外徑’在晶片孔(122)和UED晶片(1)之間的側面也 形成空間。向該中空的空間分配螢光液(2),使LED晶片 (1)的側面也得以塗敷。經由考慮LED晶片的外側 面和晶片孔(122)的内側面之間的距離來製造導引構件 (120)’能夠準確地調節塗敷在LED晶片外侧面的 8 201251129 38804pif 螢光液(2)的厚度。 ,佳為螢統(2)以如下方式分配:錄⑼的喷 嘴沿者晶片孔(122)的内周移動的同時, 螢光液(2)。 ® 的牛Ξΐ所ί,成向各個晶片孔(122)填滿榮光液(2) 出導引構件⑽)的晶片孔(122)上的丄 =:二)間二的述’以稱微超過晶片孔(122) 構件(12〇)的上面時,具有能夠準確地 。卩塗敷在LED晶片⑴上_螢紐 = πΓ,:能夠減少價格昂貴的榮光物質 的浪f的同時’還能準確地調節螢光液(2)的量。 完成⑴步驟後’經過規定時間後在螢光液 一 s,的硬化劑的作用下,合成樹脂溶液硬化。如圖7所 狀態下’執行從基底構件(11〇)去除導引構件 二步驟)。較佳為,勞光液⑵的黏度 硬化的狀態下^導==錢光液(2)沒有完全 片孔Lr的=持。根據情況’螢光液⑺的形狀與晶 表面』力和二i不-完二1同,並且根據登光液⑴的 為大問題。 A 上發生變形的情況也不會成 201251129 結束螢光液(2)的硬化,完成塗敷有螢光體的LED 元件後,從基底構件(110)拆卸LED元件,封裝到外殼 或導線架,從而完成led元件。 如上所述,具有如下優點:可以利用形成於導引構件 (120)的晶片孔(122),容易且準確地調節塗敷於LED 晶片(1)的上面或侧面的LED晶片(1)厚度。另外,具 有如下優點:大幅降低螢光液(2)中混入氣泡的可能性, 由此可防止因氣泡產生的不良。 另外,就LED晶片製程特性而言,根據屬於相同晶片 的批次(lot)的特性而LED晶片(1)的色座標值不同的 ,況較多,並且根據晶片上的位置,屬於相同晶片的led 晶片(1)也在色座標值上存在差異的情況較多。但是,如 本發明般利用具備晶片孔(122 )的導引構件(丨2〇 ),容易 且準確地調節塗敷於LED晶片(1)的螢光液(2)的厚度, 塗敷根據各個LED晶 ⑴固有的色座標值的適量的榮 ,液(2),由此具有提高lED元件的產量和品質的優點。 單純地利用泵(50)調節螢光液(2)的量時,精密度存 極限,在多品種少量生產的情況下,為了針 每次重新設定泵(50)的分配條件,需要較多的時^: 力’與此相反,在本發明的情況下,具有如下優點 _類製作薄膜形態的導引構件(12〇),針對各個= 用與其對應的導引構件⑽),可以容易且迅速的調 光液(2)的量。 瓦 下面’參照圖8和圖9說明本發明的LED元件製造方 201251129 38804pif 法的第2實施例。 ’本實施例的導引構件(22〇)與第1實施 的差異在於,晶片孔(222)沒有形 、、 刀別執行準備這種導引構件(220)的步驟 和準備基底構件(21〇)的步驟後,如圖8所示般執行將導 引構件(220)附著到基底構件(21〇)的步驟。可以先在 基底構件(210)上附著led晶片⑴後,再附著導引構 件U20),並且也有相反情況,但是,本實施例中,如圖 8所示般執行先將導引構件(22〇)附著到基底構件(21〇), 再將LED晶片(1)分別配置到導引構件(22〇)的晶片孔 (222)内部的步驟。較理想的是,在將LED晶片(1)配 置於晶片孔(222)内部時,考慮塗敷於LED晶片侧 面的螢光液(2)的厚度,在晶片孔(222)内部的準確的 位置上配置LED晶片(1)。 接著,如圖9所示,執行在LED晶片(1)上分配螢 光液(2)的步驟。可以如第1實施例中說明般以稍微溢出 晶片孔(222)的方式分配螢光液(2)後,利用推擠構件 刮除螢光液(2),還可以利用泵(50)準確地調節將要分 配的螢光液(2)的量,如圖9所示般以與晶片孔(222) 的上侧高度一致的方式分配螢光液(2)。在這種情況下, 也可以省略第1實施例中說明的利用推擠構件(60)刮除 螢光液(2)的(0步驟。 接著,去除導引構件(220),完成LED元件的過程與 之前的第1實施例中說明的過程相同。 201251129 另一方面,如圖2和圖8所示’視需要能夠以如下方 式形成導引構件:晶片孔内壁相對於下面傾斜,而不是導 引構件(220)的晶片孔(222)内壁相對於下面垂直形成。 下面,參照圖10說明本發明的LED元件製造方法的 第3實施例。 第3實施例的LED元件製造方法與之前說明的實施例 不同,其差異在於:如圖10所示,以導引構件(32〇)的 b曰片孔(322 )内壁與LED晶片(1)的外壁相接的方式形 成。即,以晶片孔(322 )的内周形狀與LED晶片(j )的 週邊形狀一致的方式形成導引構件(32〇)後,在基底構件 (310)分別附著導引構件(32〇;)和LED晶片(1)。因形 成為厚於LED晶片(1)的高度的導引構件(32〇)的厚度, 而只在LED晶片(1)的上側形成晶片孔(322)的中空的 空間。向該部分分配榮光液⑺,_推擠構 的榮光液⑺後,T使螢光液⑺只塗佈在㈣晶片(f) 的上侧。 特別是,對於只在LED晶片⑴的上側產生光㈣ 心的LED晶片⑴’㈣這種方法塗敷螢光液⑵, 具有能夠節省螢光液(2)的優點。 以上,對本發轉舰明了理想實補,但本發明以 fe圍並不限定於之前說明且圖示的形離。 ’ 例如’基底構件和導㈣件的材i和結構可以進行多 ,變形。可以使導㈣件具有黏著性而附著 ^ 也可以將基錢件構成林具有轉 -構件 12 201251129In particular, in terms of LED wafer process characteristics, the characteristics of each of the LED wafers forming the LED wafer or the individual LED chips are different, so it is necessary to apply an appropriate amount of firefly corresponding to the characteristics of the LED wafer each time. Light liquid. 1 The amount of liquid applied to each of the substitutes can be adjusted by controlling the pump for dispensing the fluorescent liquid. However, 'in terms of the structure of the pump, the fine-tuning of the fluorescent ί small unit has a limit', so it is difficult to increase or decrease the very small amount of the regulation. In the process of distributing the fluorescent liquid in the county, sometimes it is mixed with the blistering. A bad situation has occurred. The body state has the following problems: it is applied to the individual position rliirr, or it is produced by the hoof, and the thickness of the fluorescent liquid on the ED wafer is different. In this case, ^ is not solid; ^, ^ _ point: the color coordinates of the light generated in the LED element. Or the color coordinate value of the light that can be applied to each of the light that is irradiated to the light is not solved by the above-mentioned object, and the material coated on the LED wafer is prepared by the above-mentioned method. For mosquitoes. (4) First (4), and the green thickness 201251129 jjoowpn In order to achieve the purpose, the LED element manufacturing method of the present invention is a method for manufacturing an LED element by mixing a luminescent liquid of a recording material with a green crystal synthetic non-woven towel. The ship includes the steps of: (a) preparing a base member having a flat plate shape; (b) guiding the sheet form in which a plurality of chip holes are formed, and the cut pieces are accommodated in each of the guide members. Crystal = inner = the upper member is provided with the upper guiding member and the plurality of LED chips; (4) after the steps (a), (b), and (c) are completed, the fluorescent liquid is distributed to each of the wafer holes of the guiding member And (4) after the step (4) is completed, the guiding member is removed from the base member. The LED element manufacturing method of the present invention has the effect of finely adjusting the thickness of the phosphor applied to the LED wafer. Further, the LED element manufacturing method of the present invention has an effect of easily maintaining the thickness of the phosphor applied on the LED wafer to be constant. [Embodiment] Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. The present invention relates to a method for producing an LED element by coating a LED wafer with a fluorescent liquid prepared by mixing a powdery fluorescent material and a liquid synthetic resin. Fig. 1 to Fig. 6 are views for explaining the first embodiment of the LED element manufacturing method of the present invention. First, as shown in Fig. 1, a step ((a) step) of preparing a base member (110) of a flat plate shape is performed. The base member (110) may be formed of a flat plate made of metal or synthetic resin, or may be formed into a synthetic resin film shape 6 201251129 38804pif state. In the present embodiment, the form of the synthetic resin film is exemplified, and an adhesive material is applied on the base member (110) so that the following guiding member (120) and the LED wafer (1) can be attached to the base member. (11〇) On. Next, as shown in Fig. 2, the step j(b) of preparing the guiding member (12〇) is performed. The guiding member (12 turns) is formed in a thin plate shape, and a plurality of chip holes (122) are formed. In the guide member (12A) of the first embodiment, the upper side of the wafer hole (122) is covered by a mask (121) in the form of a mesh. The thickness of the guiding member (120) is formed to be larger than the height of the LED wafer (i). The size of the wafer hole (122) is formed to be larger than that of the LED wafer (the peripheral dimension. The base member (11〇) has been prepared as described above and In the state of the guiding member (12〇), the guiding member (120) is disposed on the base member (10) in such a manner that each of the LED wafers (1) is housed in each of the wafer holes (122) of the guiding member (12) Step of a plurality of LED chips (1) (step (c)). In the first embodiment, the step (c) is performed by arranging a plurality of LED chips (1) on the substrate, the member (110), and accommodating the wafers of the respective guiding members (12 以) with the respective crystals (1). In the manner of the holes (122), a guiding member (12A) is disposed on the base member (110). That is, as shown in Fig. 3, the LED wafer (1) is first attached at a position of the base member 10) corresponding to the wafer hole (122) of the guiding member. Next, as shown in Fig. = No, the guiding member (10) is attached to the base member (10). At this time, the respective wafer holes (122) of the port guiding member (12G) correspond to the LEDs, and are attached to the base wires (i) G in advance: respectively in the wafer holes (10) of the guiding members (m) Each of the pieces 201251129 joouHyn is as described above, and after the steps (a), (b), and (c) are completed, as shown in FIG. 5, the guide member (12) is equipped with a pump (50). The step (d) of dispensing the fluorescent liquid (1) in each of the wafer holes U22) of 〇). A phosphor (2) in which a phosphor powder is mixed in a synthetic resin solution is dispensed into the wafer hole (122). The synthetic resin solution can be mixed with a main agent and hardened. As shown in Fig. 5, the phosphor (7) is dispensed so as to fill the LED wafer (1) with the phosphor (2) filling the space formed by the wafer holes (122). As described above, if the fluorescent liquid U) is dispensed on the mesh-shaped mask (121), the fluorescent liquid (2) passes through the mask (121) and flows into the lower wafer hole (122). By coating the phosphor (2) on the mesh-shaped mask (121), generation of bubbles in the phosphor (2) filled in the wafer holes (122) can be prevented. The pump (50) is used to adjust the amount of the fluorescent liquid (2) to be distributed so that the fluorescent liquid (2) is dispensed to the extent that the wafer holes (122) are accurately filled, or to the extent that the wafer holes (122) are slightly overflowed. As shown in Fig. 5, the case where the fluorescent liquid (2) is dispensed to slightly overflow the wafer hole (122) is exemplified in the present embodiment. On the other hand, in the present embodiment, the guiding member (120) is formed such that the inner side surface of the wafer hole (122) and the outer side surface of the LED wafer (1) are spaced apart from each other. That is, the inner diameter of the wafer hole (122) is formed larger than the outer diameter of the LED wafer (1), and a space is also formed on the side surface between the wafer hole (122) and the UED wafer (1). The fluorescent liquid (2) is dispensed into the hollow space, and the side surface of the LED wafer (1) is also coated. The manufacturing guide member (120)' can be accurately adjusted by considering the distance between the outer side surface of the LED wafer and the inner side surface of the wafer hole (122). 8 201251129 38804pif fluorescent liquid coated on the outer side of the LED wafer (2) thickness of. The fluorescing system (2) is distributed in the following manner: while the nozzle of the recording (9) moves along the inner circumference of the wafer hole (122), the fluorescent liquid (2). ® Ξΐ , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , When the wafer hole (122) is on the upper surface of the member (12 〇), it can be accurately.卩 is applied to the LED chip (1) _Fluorescent = π Γ, which can reduce the amount of the fluorescent liquid (2) while reducing the cost of the expensive glory material. After the completion of the step (1), the synthetic resin solution is hardened by the action of the hardener of the phosphor for one s after a predetermined period of time. The removal of the guiding member from the base member (11〇) is performed as shown in Fig. 7 (step 2). Preferably, the viscosity of the working solution (2) is hardened. == Qianguang liquid (2) is not completely the hole Lr = holding. Depending on the situation, the shape of the fluorescent liquid (7) is the same as that of the crystal surface, and the second is not the same as the second liquid, and it is a big problem depending on the light-receiving liquid (1). When the deformation occurs on A, the curing of the phosphor (2) is not completed until 201251129. After the LED element coated with the phosphor is completed, the LED element is removed from the base member (110) and packaged into the outer casing or the lead frame. Thereby completing the led component. As described above, there is an advantage that the thickness of the LED wafer (1) applied to the upper surface or the side surface of the LED wafer (1) can be easily and accurately adjusted by using the wafer hole (122) formed in the guiding member (120). Further, it has the advantage of greatly reducing the possibility of mixing bubbles in the fluorescent liquid (2), thereby preventing the occurrence of defects due to bubbles. In addition, in terms of LED wafer process characteristics, the color coordinates of the LED chip (1) are different depending on the characteristics of the lot belonging to the same wafer, and are of the same wafer according to the position on the wafer. The led chip (1) also has a large difference in the color coordinate value. However, as in the present invention, the thickness of the fluorescent liquid (2) applied to the LED wafer (1) is easily and accurately adjusted by using a guiding member (?) having a wafer hole (122), and coating is performed according to each The LED crystal (1) has an inherent amount of color coordinates of an appropriate amount of liquid (2), thereby having the advantage of improving the yield and quality of the lED element. When the amount of the fluorescent liquid (2) is simply adjusted by the pump (50), the precision is limited. In the case of a small number of small-scale production, it is necessary to reset the distribution condition of the pump (50) every time. In contrast to the above, in the case of the present invention, the guide member (12〇) having the following advantages in the form of a film can be easily and quickly used for each of the guide members (10) corresponding thereto. The amount of dimming solution (2). Next, a second embodiment of the LED element manufacturing method 201251129 38804pif method of the present invention will be described with reference to Figs. 8 and 9 . The guiding member (22A) of the present embodiment differs from the first embodiment in that the wafer hole (222) has no shape, the step of preparing the guiding member (220) and the preparation of the base member (21〇) After the step of ), the step of attaching the guiding member (220) to the base member (21A) is performed as shown in FIG. After the LED wafer (1) is attached to the base member (210), the guiding member U20) is attached, and the opposite is also true. However, in the present embodiment, the guiding member (22〇) is executed as shown in FIG. The step of attaching to the base member (21A) and then arranging the LED chips (1) to the inside of the wafer hole (222) of the guiding member (22A). Preferably, when the LED wafer (1) is disposed inside the wafer hole (222), the thickness of the fluorescent liquid (2) applied to the side surface of the LED wafer is considered, and the accurate position inside the wafer hole (222) is considered. The LED chip (1) is arranged on it. Next, as shown in Fig. 9, a step of distributing the fluorescent liquid (2) on the LED chip (1) is performed. The phosphor (2) can be dispensed with a slight overflow of the wafer holes (222) as described in the first embodiment, and then the fluorescent material (2) can be scraped off by the pushing member, and the pump (50) can be accurately used. The amount of the fluorescent liquid (2) to be dispensed is adjusted, and the fluorescent liquid (2) is dispensed in such a manner as to match the height of the upper side of the wafer hole (222) as shown in FIG. In this case, the polishing liquid (2) scraped off by the urging member (60) described in the first embodiment may be omitted (0 step. Next, the guiding member (220) is removed to complete the LED element. The process is the same as that described in the previous first embodiment. 201251129 On the other hand, as shown in FIGS. 2 and 8, the guide member can be formed as follows: the inner wall of the wafer hole is inclined with respect to the lower side instead of the guide The inner wall of the wafer hole (222) of the lead member (220) is formed perpendicularly to the lower surface. Next, a third embodiment of the LED element manufacturing method of the present invention will be described with reference to Fig. 10. The LED element manufacturing method of the third embodiment is as described above. The difference in the embodiment is that, as shown in Fig. 10, the inner wall of the b-plate hole (322) of the guiding member (32) is formed in contact with the outer wall of the LED chip (1). After the inner peripheral shape of (322) is formed in a manner to conform to the peripheral shape of the LED chip (j), the guiding member (32) is attached to the base member (310), respectively, and the LED chip (1) is attached. ) formed as thicker than the height of the LED chip (1) The thickness of the guiding member (32 〇) is formed, and only the hollow space of the wafer hole (322) is formed on the upper side of the LED wafer (1). The glory liquid (7) is dispensed to the portion, and the refractory liquid (7) is pushed. The fluorescent liquid (7) is applied only to the upper side of the (four) wafer (f). In particular, the LED wafer (1)' (4) which produces light (four) core only on the upper side of the LED wafer (1) is coated with the fluorescent liquid (2), having The advantages of the fluorescent liquid (2) can be saved. The above is an ideal complement to the present invention, but the present invention is not limited to the previously described and illustrated separation. ' For example, the base member and the guide (four) pieces The material i and the structure can be multi-formed and deformed. The guide member (4) can be adhered and attached. ^ The base money member can be formed into a forest with a turn-member 12 201251129

JS6U4piI 很料况H M祕冊構成為印刷有電極 =板形態’將LED晶片以電氣連接於該基板形態的基底 構件的方式進行封裝後,將導引構件覆蓋在基底構件上, 向晶片孔分配螢光液。 【圖式簡單說明】 圖1至圖7是用於說明本發明的LED元件製造方法的 第1實施例的圖。 圖8及圖9是用於說明本發明的LED元件製造方法的 第2實施例的圖。 圖1〇是用於說明本發明的LED元件製造方法的第3 實施例的圖。 【主要元件符號說明】 110、210、310:基底構件 120、220、320: 導引構件 121:遮罩 122 ' 222 ' 322: 晶片孔 1: LED晶片 2: 螢光液 50:泵 60:推擠構件 13JS6U4piI is very good. The HM booklet is configured by printing an electrode=plate form. The LED chip is packaged in such a manner as to be electrically connected to the base member in the form of the substrate. Then, the guiding member is covered on the base member, and the wafer hole is distributed to the wafer hole. Light liquid. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 through Fig. 7 are views for explaining a first embodiment of a method of manufacturing an LED element of the present invention. 8 and 9 are views for explaining a second embodiment of the LED element manufacturing method of the present invention. Fig. 1A is a view for explaining a third embodiment of the method of manufacturing an LED element of the present invention. [Main component symbol description] 110, 210, 310: base member 120, 220, 320: guiding member 121: mask 122 '222 ' 322: wafer hole 1: LED wafer 2: fluorescent liquid 50: pump 60: push Extruded member 13

Claims (1)

201251129 ^88ϋ4ρΐΙ 七、申請專利範圍: 1.一種LED元件製造方法,是將液狀合成樹脂中混合 有粉狀螢光物質的螢光液塗敷到LED晶片的LED元件製 造方法,其特徵在於,包括如下步驟: (a) 準備平板形狀的基底構件; (b) 準備形成有多個晶片孔的薄板形態的導引構 件; (c)使上述LED晶片收容於上述導引構件的各個 晶片孔内的方式在基底構件上配置上述導引構件和多個 LED晶片; (d) 完成上述(a)、(b)、(c)步驟後,向上述導 引構件的各個晶片孔分配上述螢光液;以及 (e) 完成上述(d)步驟後,從上述基底構件去 上述導引構件。 〃 2.如申請專利範圍第1項所述的LED元件製造方法, 其特徵在於’還包括如下步驟: ▲⑴完成上述⑷步驟後,執行上述(e)步驟 :液利用推擠構件刮除溢出導引構件的晶片孔上的上述榮 造方^ =帛1項衫2酬賴咖元件製 配置======= 上这導引構件的晶片孔内的方式將上述導㈣件配置 201251129 3_4ριί 述基底構件。 項所述的LED元件製造方法, 4.如申請專利範圍第3 其特徵在於: 的上,ib )步驟的導引構件的每個晶片孔中,該晶片孔 的上侧疋由網形態的遮罩覆蓋, 德,i述⑷步驟是在上述導引構件的遮罩上分配榮光 上、螢光料過"11述遮罩,錄雜置於其下側的 上返LED晶片。 5.如_ 5f專職圍第丨項或第2項所述的led元 k方法,其特徵在於: 上述(e)步驟按照如下方法執行:在上述基底構件上 ^置上述導引構件後’以上述咖晶片分別收容於該導引 構件的晶片孔内的方式,將上述LED晶片配置於上述基底 6. 如申請專利範圍第1項或第2項所述的LED元件製 造方法,其特徵在於: 以上述導引構件的晶片孔内壁和LED晶片的側面相 互隔開距離的方式形成上述導引構件的晶片孔, 上述(d)步驟所分配的螢光液還填充到上述晶片孔的 内側面和上述LED晶片的外側面之間。 7. 如申請專利範圍第6項所述的LED元件製造方法, 其特徵在於: 上述導引構件的晶片孔内壁以相對於下面呈傾斜的方 式形成。 15 201251129 joowpu 8·如申請專利範圍第1項或第2項所述的LED元件製 造方法,其特徵在於: 上述導引構件的晶片孔内壁以與LED晶片的外壁相 接的方式形成, 上述(d)步驟所分配的螢光液只塗敷於上述LED晶 片的上侧。 9·如申請專利範圍第1項或第2項所述的LED元件製 造方法,其特徵在於: 上述基底構件形成為具有黏著性的薄膜形態,以使上 述LED晶片和上述導引構件能夠附著於上述基底構件上。 1〇·如申請專利範圍第1項或第2項所述的LED元件 製造方法,其特徵在於: 上述導引構件由合成樹脂薄膜形成。 11.如申請專利範圍第i項或第2項所述的LED 製造方法,其特徵在於: 上述基底構件為基板, 在上述(C)步驟中將上述LED晶片 基板並封裝。 &201251129 ^88ϋ4ρΐΙ VII. Patent application scope: 1. A method for manufacturing an LED element, which is a method for manufacturing an LED element in which a fluorescent liquid mixed with a powdery fluorescent substance in a liquid synthetic resin is applied to an LED chip, wherein The method includes the following steps: (a) preparing a flat-shaped base member; (b) preparing a guide member in the form of a thin plate having a plurality of wafer holes; (c) accommodating the LED chip in each of the wafer holes of the guiding member Disposing the guiding member and the plurality of LED chips on the base member; (d) after completing the steps (a), (b), and (c), distributing the fluorescent liquid to each of the wafer holes of the guiding member And (e) after the step (d) is completed, the guiding member is removed from the base member. 2. The method of manufacturing the LED element according to claim 1, wherein the method further comprises the following steps: ▲ (1) After the step (4) is completed, the step (e) is performed: the liquid is scraped off by the pushing member. The above-mentioned stencil on the wafer hole of the guiding member ^=帛1 shirt 2 酬 咖 元件 = = ======= In the way of the wafer hole in the guiding member, the above-mentioned guide (four) pieces are configured 201251129 3_4ριί The base member. The method for manufacturing an LED element according to the above aspect, wherein, in the third aspect of the patent application, the upper side of the wafer hole is covered by a mesh form in each of the wafer holes of the guiding member of the upper, ib) step. The cover cover, the German, (4) step is to distribute the glare on the mask of the guiding member, the fluorescent material is over the mask, and the upper LED chip is placed on the lower side of the cover. 5. The method of the LED element k according to Item 2 or Item 2, wherein: (e) the step (e) is performed as follows: after the guiding member is disposed on the base member The LED chip is disposed in the wafer hole of the guiding member, and the LED chip is disposed on the substrate. The LED device manufacturing method according to the first or second aspect of the invention is characterized in that: Forming the wafer hole of the guiding member so that the inner wall of the wafer hole of the guiding member and the side surface of the LED chip are spaced apart from each other, and the phosphor dispensed in the step (d) is further filled to the inner side surface of the wafer hole and Between the outer sides of the above LED chips. 7. The method of manufacturing an LED element according to claim 6, wherein the inner wall of the wafer hole of the guiding member is formed to be inclined with respect to the lower surface. The method of manufacturing the LED element according to the first or second aspect of the invention, wherein the inner wall of the wafer hole of the guiding member is formed to be in contact with the outer wall of the LED chip, d) The phosphor dispensed in the step is applied only to the upper side of the LED chip. The method of manufacturing an LED element according to the first or second aspect of the invention, wherein the base member is formed in an adhesive film form so that the LED chip and the guiding member can be attached to each other. Above the base member. The LED element manufacturing method according to the first or second aspect of the invention, wherein the guide member is formed of a synthetic resin film. 11. The method of manufacturing an LED according to the above item, wherein the base member is a substrate, and the LED wafer substrate is packaged in the step (C). &
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