201248705 42841 pif 六、發明說明： 【相關專利申請案之交叉引用】 本發明主張2011年5月31日在韓國知識產權局申請 之韓國專利申請案第10_2〇11_0〇51974號之優先權，所述 申請案之揭露内容以引用的方式全部并入本文中。 【發明所屬之技術領域】 本發明是有關於基板處理系統及使用該系統的基板 處理方法，且更特定言之，是有關於在蝕刻基板之製程之 後自基板移除雜質、氧化矽層及煙氣（fumes)的基板處理 系統及使用該系統的基板處理方法。 【先前技術】 由於半導體裝置之整合度愈來愈高，用於使鄰近裝】 電性隔離之隔離技術亦愈來愈重要。淺溝渠隔離（sti)子 成方法是用於半導體處对的—麵型的隔賴術，^ 成一溝渠，該溝渠限制半導體基板中之作用區域，且 以絕緣材料掩埋溝渠之内側來形成隔離層。 圖1是描述典型隔離層形成方法的剖視圖。 圖襯塾氧化物層及氮化物層按順序形成於^ -土 上。在該氮化物層上形成光阻圖案（ :=二光？案來圖案化該氮化物層二= 基板1G ’形成襯純化_案20及 溝渠40 (限制半導體基板1〇之作用區域）。-及 在後續製程中，藉由灰化（ashing)移除光阻圖案， 4 201248705 4284 lpif 法移除綱副絲及_者，將絕緣材料掩埋於 安〈、内側’且接著移除氮化物圖案3〇及襯墊氧化物圖 案20，從而完成隔離層。 二、;而’在下層形成為PSG層、BPSG層、SOD層或相 3的氧化物層時’由於濕洗法中之洗液，下層中發生損 σ (亦即，下層被過度蝕刻）。 、為了克服此等限制，以HF氣體進行之乾洗（代替濕 洗）作為替代製程近來正獲得愈來愈多的_。然而，在 應用乾洗時’由於基板麵成圖案之關裝置條刻之後 使用的乾洗裝置之間的傳送，各個製程間會有時間延遲， 且因此，在圖案内側產生稱作煙氣之雜質。 圖2是不意地說明溝渠40藉由蝕刻裝置而形成於半 導體基板10中之狀態的俯視圖，在將半導體基板1〇傳送 至乾洗裝置時，該半導體基板1〇曝露至大氣，且因此在溝 渠40内側產生煙氣50。 如所說明，煙氣50產生於半導體基板10上，且以 XPS/AES進行之分析展示該等煙氣5〇含有Si〇广此可理 解為以下所述的狀態，在此狀態中，触刻製程所使用之姓 刻氣體中的諸如F、C1及Br之鹵素成分留在溝渠40内側， 且接著在該等_素成分曝露至大氣時，其與大氣中之水分 反應以形成固體水合物。此等煙氣成為STI製程及圖案化 之後應用乾洗之任何製程（例如，形成閘極線及位元線之 製程）中之難題。 換句話說’若用濕洗來清洗蝕刻副產物（作為蝕刻後 201248705 42841pif 之後續製程），則與H202或緩衝氧化物蝕刻劑（boe)的 水解使煙氣不會形成。然而，如上文所描述，由於發生於 下層中之損害，不可能應用濕洗。相反地’若使用乾洗， 則會造成煙氣。 因此，需要開發新型基板處理系統以防止下層中發生 損害且另外移除蝕刻副產物及煙氣兩者。 【發明内容】 本發明之實施例提供一種具有改良結構的基板處理 系統’該基板處理系統可防止下層中發生損害且有效移除 蝕刻副產物及煙氣兩者，且提供一種使用該系統的基板處 理方法。 在態樣中，基板處理系統包括濕洗模組及乾洗模 組。濕洗模組用以向基板供應洗液，從而清洗基板之表面 且乾燥經清洗基板。乾洗模組用以喷灑清洗氣體至基板201248705 42841 pif VI. Description of the Invention: [CROSS-REFERENCE TO RELATED PATENT APPLICATIONS] The present application claims priority to Korean Patent Application No. 10-2〇11_0〇51974, filed on May 31, 2011 in the Korean Intellectual Property Office. The disclosure of the application is hereby incorporated by reference in its entirety. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing system and a substrate processing method using the same, and more particularly, to removing impurities, a cerium oxide layer, and a smoke from a substrate after a process of etching a substrate. A substrate processing system for a fumes and a substrate processing method using the same. [Prior Art] As semiconductor devices become more and more integrated, isolation techniques for electrically isolating adjacent devices are becoming more and more important. The shallow trench isolation (sti) sub-forming method is used for semiconductor-to-surface type isolation, forming a trench, which limits the active region in the semiconductor substrate, and buryes the inner side of the trench with an insulating material to form an isolation layer. . BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a cross-sectional view showing a method of forming a typical isolation layer. The lining oxide layer and the nitride layer are sequentially formed on the soil. A photoresist pattern is formed on the nitride layer (==two-light film to pattern the nitride layer two = substrate 1G' to form a liner purification method 20 and a trench 40 (to limit the active region of the semiconductor substrate 1). And in the subsequent process, removing the photoresist pattern by ashing, 4 201248705 4284 lpif method to remove the sub-filament and _, the insulating material is buried in the inner side, and then the nitride pattern is removed 3 衬垫 and pad oxide pattern 20, thereby completing the isolation layer. Second, and 'when the lower layer is formed as a PSG layer, BPSG layer, SOD layer or phase 3 oxide layer' due to the washing solution in the wet cleaning method, The damage σ occurs in the lower layer (that is, the lower layer is over-etched). In order to overcome these limitations, dry cleaning (instead of wet cleaning) with HF gas is becoming more and more an alternative process recently. However, in application During dry cleaning, there is a time lag between processes due to the transfer between the dry cleaning devices used after the substrate surface is patterned, and therefore, impurities such as smoke are generated inside the pattern. Figure 2 is unintentionally Describe the trench 40 by etching device The top view of the state formed in the semiconductor substrate 10 is such that when the semiconductor substrate 1 is transferred to the dry cleaning device, the semiconductor substrate 1 is exposed to the atmosphere, and thus the flue gas 50 is generated inside the trench 40. As illustrated, the flue gas 50 It is generated on the semiconductor substrate 10, and the analysis by XPS/AES shows that the flue gas 5〇 contains Si〇. This can be understood as the state described below, in which the gas for the engraving process is used. The halogen components such as F, C1 and Br remain inside the trench 40, and then react with the moisture in the atmosphere to form a solid hydrate when the components are exposed to the atmosphere. These flue gases become STI processes And the problem in any process of applying dry cleaning after patterning (for example, the process of forming gate lines and bit lines). In other words, if wet cleaning is used to clean the etching by-products (as a follow-up process to 201248705 42841pif after etching) The hydrolysis with H202 or buffered oxide etchant (boe) prevents the formation of fumes. However, as described above, it is not possible to apply wet cleaning due to damage occurring in the lower layer. Inversely, if dry cleaning is used, it will cause smoke. Therefore, there is a need to develop a new substrate processing system to prevent damage in the lower layer and to additionally remove both etching by-products and smoke. [Invention] Embodiments of the present invention provide A substrate processing system having an improved structure that prevents damage in the underlying layer and effectively removes both etching by-products and flue gas, and provides a substrate processing method using the system. In the aspect, substrate processing The system comprises a wet cleaning module and a dry cleaning module. The wet cleaning module is used for supplying a washing liquid to the substrate, thereby cleaning the surface of the substrate and drying the cleaned substrate. The dry cleaning module is used for spraying the cleaning gas to the substrate.
上，從而蝕刻形成於基板上的氧化矽層，該清洗氣體含HF 氣體。 根據本發明之實施例，基板處理系統可更包括：卡匣 模組，用以在處理基板之前或之後收納基板；大氣傳送模 組’用以傳送收納於該卡匣模組中之基板；真空傳送模組， 其連接至乾洗模組，用以在真空狀態下傳送基板至乾洗模 組，及負載鎖疋模組，其連接至真空傳送模組，且使壓力 在大氣狀態與真空狀態之間改變。 在另一態樣中，一種基板處理方法包括：執行乾洗製 程’喷灑清洗氣體至基板上以移除形成於基板上的氧化石夕 6 201248705 42841pif 層’該清洗氣體含有HF氣體；及執行濕洗製程，供應洗 液至基板以清洗基板之表面，及乾燥基板。 根據本發明之另一實施例，該基板處理方法可更包 f :執行初步濕洗製程，所述初步濕洗製程是乾洗製程之 刚供應洗液至基板以清洗基板之表面並乾燥基板。 根據本發明之另一實施例，該初步濕洗製程可包括自 基板之表面移除有機材料，且濕洗製程可包括移除煙氣， s亥等煙氣產生自含有函素化合物之蝕刻氣體殘留物。 根據本發明之實施例，可防止下層遭受損害，且可有 效地自基板移除氧化矽層、蝕刻副產物及煙氣。 藉由參看隨附圖式詳細描述本發明之例示性實施 例，本發明之以上特徵及優點及其他特徵及優點將變得更 加顯而易見。 【實施方式】 下文中，將參看隨附圖式詳細描述根據本發明之實施 例的基板處理系統及方法。 ^圖3是根據本發明之實施例的基板處理系統的示意組 態圖。圖4是圖3之濕洗模組的示意組態圖。圖5是圖3 之乾洗模組的示意組態圖。 參看圖3至圖5 ’根據本發明之實施例的基板處理系 統1000包括卡匣模組100、大氣傳送模組2〇〇、濕洗模組 3〇〇、負載鎖定模組400、真空傳送模組5〇〇及乾洗模組600。 卡匣模組100收納處理之前及之後的基板。在本實施 例中將四個卡模組配置成一列，且該四個卡g模組中 201248705 4284 lpif 之兩者收納處理之前的基板，且其他兩個卡£模組收納處 理之後的基板。本文中，如下文所描述，「處理」意指藉由 乾洗模組600及濕洗模組300執行的清洗（或蝕刻）製程。 大氣傳送模組200傳送置放於卡匠模組中之基 板，或傳送該基板至該卡匡模組1〇〇。該大氣傳送模組2〇〇 連接至該四個卡匣模組，且包括傳送機械手21〇。該傳送 機械手210沿著四個卡匣模組配置的方向移動，且 零件220與卡匣模組1〇〇之間傳送基板。 緩衝令件220暫時收納基板’且該緩衝零件220安置 於下文將描述之一對濕洗模組300之間。藉由輔助傳送機 械手230，將置放於緩衝零件220中之基板傳送至濕洗模 組300或負載鎖定模組400。另一方面’自濕洗模組3〇〇 及負載鎖疋模組400傳送之基板暫時置放於緩衝零件220 中。為此’將用於收納基板之多個槽製備於緩衝零件22〇 中。 在濕式製程中，濕洗模組300清洗基板。在本實施例 中，δ又置一對/燕洗模組。參看圖4，濕洗模組3〇〇包括腔 至310、基座320及洗液喷麗器330。基座320可旋轉地安 置於腔室310内側，且基板W置放於基座32〇上。洗液喷 灑器330安置於基座320之上部部分，且供應洗液至基板 W。在此情況下，可根據清洗之目的（亦即，根據欲經由 清洗自基板表面移除之材料）適當地改變洗液·^舉例而言， 洗液可為超純水、去離子水、nh4oh水、臭氧水或類似者。 又，濕洗模組300可更包括沖洗溶液供應器，該沖洗溶液 8 201248705 42841pif 供應态供應沖洗溶液（例如，超純（ultm pure )沖洗溶液） 至基板以沖洗清洗之後的基板。或者，濕洗模組3〇〇可不 包括單獨的沖·液供應n，但允許洗时㈣bo來供 應沖洗溶液。 藉由供應沖洗>谷液至基板且同時旋轉基座,沖洗 溶液擴散至基板之整個表面上，從而清洗該基板。隨後， 藉由將沖洗溶液供應至該基板來沖洗該基板，且接著藉由 連續旋轉基座320歷時某一時間來乾燥該基板。此時，可 加熱基板，或可供應惰性氣體至該基板以實現平滑乾燥。 為此，濕洗模組300可更包括加熱器（未繪示）及惰性氣 體喷灑器（未繪示）。 ” 可控制供應至基板的洗液（或沖洗溶液）量，以使洗 液之擴散僅遍及基板之表面（頂部）而不會沿著侧表面流 下或流動至基板之底部上。亦即，藉由考慮到基板之轉速、 根據轉速之離w力及基板與洗社間的雜力而適當地控 制洗液量，洗液在基板之整個表面上擴散且藉由離心力而 甩出基板之邊緣’而不是在該基板之邊緣處沿著侧表面流 下。以此方式，藉由控制洗液量，可防止洗液接觸基板之 侧表面及底部’且因此可防止基板之下層中發生由洗液引 起的損害。 另外，為了防止洗液沿著基板之側表面流下，濕洗模 組300可更包括辅助惰性氣體喷灑器（未綠示），該辅助惰 性氣體供賴性氣體至基板之縣面。清洗基板 時’藉由供應舰氣駐基板之㈣面，可防止洗液沿著 201248705 42841pif 基板之側表面流下。 在此情況下’藉由使惰性氣體自基板之邊緣的下部部 分喷灑至其上部部分，由於離心力，不會阻止洗液橫越基 板之整個頂表面而擴散，且另外，可有效地防止洗液沿著 基板之側表面流下。 負載鎖定模組400使壓力在真空狀態與大氣狀態之間 改變，且用於收納基板的卡匣（未繪示）製備於負載鎖定 模組400内侧。 真空傳送模組500在真空狀態下傳送基板至乾洗模組 600 ’且該真空傳送模組500連接至負載鎖定模組4〇〇。真 空傳送模組500之内侧維持在真空狀態中。此外，用於傳 送基板之傳送機械手510製備於真空傳送模組5〇〇内側。 本文中，傳送機械手510可以是包括兩個傳送臂以提高傳 送效率的雙臂型（dual type)傳送機械手。 在乾洗製紅中，乾洗模組6〇〇清洗（或蝕刻）基板。 在本實施射’提供四個乾洗漁。該四魏洗模組是沿 著真空傳賴組5GG之周邊而安[參看圖乞： 600包括連接至真空傳送模組5〇〇之腔室61(^上面詈右 基板W之基座62〇以可升降方移置㈣室㈣空 側處。基座62G可包括熱交換n以調整基板之 清洗氣體的喷_㈣安置於腔室⑽内部麗 處，以使形成於基板W上之氧化石夕層;： 洗製程而得以清洗。 貝J猎由乾 以用於引入通量 喷灑頭630連接至氣體供應系統64〇 201248705 42841pif 受控的清洗氣體。在乾洗時，不單獨使用取氣體，而將 至少包括HF氣體的混合氣體用作清洗氣體。舉例而言， 可將HF亂體與吨氣體的混合氣體用作清洗氣體。清洗 氣體之每—組份氣體是分別提供至氣體供應祕640，如 此-來’直至鮮組份氣體供應至腔室，該等組份氣體方 此口:亦即，儘官未細分且未綠示，但氣體供應系統⑽ 包括：氣體供應通路642，其連接至每—組份氣體的供應 ，641 (含有氣瓶（gas bGmbe)或流體的罐）；及質量流 量控制器（mass flow controller，MFC) 643，豆包括於 源 641 中。 ....... 噴灑頭630是用於喷灑組份氣體的構直 應系統640收納至腔室⑽中。為了有效繼== 頭630 ’喷灑頭㈣可能是非混合類型，其中，清洗氣體 不會在該噴獅63 0内側混合，而是在將其喷灑至腔室6 i 〇 中之後混合。為此，可應用雙流型（dual type)喷_ 63〇， 其中’在喷魏㈣關形成至少兩支單獨的流動路徑。 用於喷灑清洗氣體至腔室610中的構件可以是與噴灑頭不 同類型的構件（諸如，氣體喷嘴或氣體噴灑板），或是其中 每種氣體均可自腔室61G之下部部分（而非上部部分）、引 入的一類構件。 此外，用於加熱基板的鹵素燈可另外安置於腔室61〇 之上端部分。 毫托 接著描述乾洗製程。將腔室610内部的壓力調整至1〇 (mTorr)至150托，將基座16〇的溫度調整至攝氏 201248705. HZOHipif 20度至攝氏70度，且接著裝載基板w。將基座62〇的溫 度選在最適合清洗氣體之清洗反應的範圍内，且基座62〇 的溫度成絲板W的溫度。此時，為了防止清洗氣體凝 結，可將腔室6H)之壁維持在攝氏5〇度至攝氏1〇度，且 亦將喷灑頭630維持在攝氏5〇度至攝氏15〇度。 接f，將通量受控的HF氣體自HF氣體供應系統引 入至腔室61G巾’且同時將通量受控的NH3氣體自邮 氣體供應系統引入至腔室61〇中。 以此方式，經由喷灑頭63〇將已分別引入至腔室61〇· :之HF氣體及NH3氣體喷灑至腔室61〇中且混合hf 氣體與NH3氣體。因此’ #由混合氣體絲靡彡成於基板 上的氧化矽層及其他雜質。隨後，將基座62〇提昇到以 =5中之虛線說明的位置，且#由以㈣燈在攝氏度至 攝氏200度下加熱基板w來移除蝕刻副產物。 藉由將選自N2、Ar&He中之至少一惰性氣體添加至 氣體’可將$清洗氣體用作載運氣體。又，可供應添 2 IPA氣體的清洗氣體。在此情況下，因為ιρΑ在室溫 ，流體’所以可藉由適當起泡或汽化器來使ιρΑ汽化， 且接著引入IPA。 下文中’將描述使用上文描述之基板處理系統的基板 圖6是根據本發％之實施例的基板處理^法M1〇〇的 圖0 參看圖6,將等候處理的基板置放於卡H模組1〇〇中。 12 201248705 4284lpif 在此情況下，如上文在先前技術中所描述，可以使用包括 齒素成分（諸如’ F、C1或B〇賴刻氣體來侧基板， 且因此該基板成為_形成於其巾的基板。經由大氣傳送 模組2GG及緩衝零件22〇來將基板傳送至濕洗模組3〇〇， 且在濕洗模組300中執行初步濕洗製程S10。 ^接著描述初步濕洗製程S10。首先，在操作S11中， 藉由在旋轉基板之同時供應洗液（例如，臭氧水），使洗液 之擴散遍及基板之整録面，时移除时基板上的任何 有機材料。藉由供應超純水（沖洗溶液）至基板來沖洗該 基板，且接^在操作S12巾乾雜基板，從而完成初步濕 洗製程。接著，在製程S2〇中，經由緩衝零件22〇、負載 鎖定模組400及真空傳送模組5〇〇將基板傳送至乾洗模組 600，且在乾洗模組60〇中執行乾洗製程S3〇。 接著描述乾洗製程S30。在基板溫度維持在最適合清 洗反應的溫度範圍内（攝氏2〇度至攝氏7〇度）的情況下， 藉由在操作S31中將清洗氣體（HF'NHs)噴灑至基板上， 氧化矽層及其他雜質藉由與清洗氣體反應而得 後，提昇基座似’且藉由在操作S32中在攝氏=汶 氏200度下加熱基板來移除蝕刻副產物。 後，在製私S40中，再次將基板傳送至濕洗模組 300，且在該濕洗模組3〇〇中執行濕洗製程S5〇。該濕洗製 程S50移除來自基板的煙氣。如上文在先前技術中所描 這4绪如F、C1及Br之鹵素成分（在触刻製程中，該等 鹵素成分被添加至蝕刻氣體中以在基板上形成圖案）留在 13 201248705 4284 lpif 基板之溝渠40内側，且接著曝露至大氣時，該等鹵素成分 與大氣中之水分反應以形成固體水合物。 接著描述濕洗製程S50。在操作S51中，藉由在旋轉 基板之同時供應洗液（超純水），使洗液擴散而遍及基板之 整個表面，且煙氣藉由與洗液反應而得以移除。接著，藉 由在操作S52中乾燥基板，完成濕洗製程S5〇。 在進行至濕洗製程S50之後的製程時，出於製程的穩 定性，有時需要在基板上形成化學氧化物。在此情況下厂 移除煙氣，且接著藉由供應諸如臭氧水或氨水的洗液（其 促&進形成化學氧化物）至基板，在基板上形成化學氧化物 (隨後，可執行沖洗製程），且接著乾燥基板。Upper, thereby etching a layer of ruthenium oxide formed on the substrate, the purge gas containing HF gas. According to an embodiment of the present invention, the substrate processing system may further include: a cassette module for accommodating the substrate before or after processing the substrate; and an atmospheric transfer module 'for transferring the substrate received in the cassette module; a transfer module connected to the dry cleaning module for transferring the substrate to the dry cleaning module under vacuum and the load lock module connected to the vacuum transfer module and allowing the pressure to be between the atmospheric state and the vacuum state change. In another aspect, a substrate processing method includes: performing a dry cleaning process of spraying a cleaning gas onto a substrate to remove an oxide oxide formed on the substrate. ???6 201248705 42841pif layer 'The cleaning gas contains HF gas; and performing wet The washing process supplies a washing liquid to the substrate to clean the surface of the substrate, and dry the substrate. According to another embodiment of the present invention, the substrate processing method may further comprise: performing a preliminary wet cleaning process, wherein the dry cleaning process is just supplying the washing liquid to the substrate to clean the surface of the substrate and drying the substrate. According to another embodiment of the present invention, the preliminary wet cleaning process may include removing the organic material from the surface of the substrate, and the wet cleaning process may include removing the flue gas, and the flue gas such as shai is generated from the etching gas containing the functional compound. the remains. According to an embodiment of the present invention, the under layer can be prevented from being damaged, and the ruthenium oxide layer, the etching by-product, and the flue gas can be effectively removed from the substrate. The above features and advantages and other features and advantages of the present invention will become more apparent from the aspects of the appended claims. [Embodiment] Hereinafter, a substrate processing system and method according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. Figure 3 is a schematic configuration diagram of a substrate processing system in accordance with an embodiment of the present invention. 4 is a schematic configuration diagram of the wet cleaning module of FIG. 3. Figure 5 is a schematic configuration diagram of the dry cleaning module of Figure 3. Referring to FIGS. 3 to 5, a substrate processing system 1000 according to an embodiment of the present invention includes a cassette module 100, an atmospheric transfer module 2, a wet cleaning module 3, a load lock module 400, and a vacuum transfer mold. Group 5 and dry cleaning module 600. The cassette module 100 houses the substrate before and after the processing. In this embodiment, four card modules are arranged in a row, and both of the four card g modules 201248705 4284 lpif accommodate the substrate before processing, and the other two cards are used to accommodate the substrate after processing. As used herein, "processing" means a cleaning (or etching) process performed by the dry cleaning module 600 and the wet cleaning module 300. The atmospheric transfer module 200 transfers the substrate placed in the card maker module or transfers the substrate to the cassette module 1 . The atmospheric transfer module 2 is coupled to the four cassette modules and includes a transfer robot 21 . The transfer robot 210 moves in the direction in which the four cassette modules are disposed, and the substrate 220 and the cassette module 1 are transferred between the substrates. The cushioning member 220 temporarily accommodates the substrate 'and the cushioning member 220 is disposed between one of the wet cleaning modules 300 which will be described later. The substrate placed in the cushioning member 220 is transferred to the wet cleaning mold set 300 or the load lock module 400 by the auxiliary transfer robot 230. On the other hand, the substrate transferred from the wet cleaning module 3A and the load lock module 400 is temporarily placed in the buffer member 220. To this end, a plurality of grooves for accommodating the substrate are prepared in the cushioning member 22''. In the wet process, the wet cleaning module 300 cleans the substrate. In this embodiment, δ is further provided with a pair of swallowing modules. Referring to Figure 4, the wet scrubbing module 3 includes a cavity 310, a pedestal 320, and a lotion squirt 330. The susceptor 320 is rotatably placed inside the chamber 310, and the substrate W is placed on the susceptor 32. The lotion sprayer 330 is disposed on the upper portion of the base 320 and supplies the washing liquid to the substrate W. In this case, the lotion may be appropriately changed according to the purpose of cleaning (that is, according to the material to be removed from the surface of the substrate by washing). For example, the lotion may be ultrapure water, deionized water, nh4oh Water, ozone water or the like. Further, the wet cleaning module 300 may further include a rinsing solution supply 8 201248705 42841pif supply state to supply a rinsing solution (eg, an ultra-pure rinsing solution) to the substrate to rinse the substrate after cleaning. Alternatively, the wet scrubbing module 3 may not include a separate flushing liquid supply n, but may allow the washing solution (four) bo to supply the flushing solution. The substrate is washed by supplying a rinsing > valley solution to the substrate while rotating the susceptor, and the rinsing solution is spread over the entire surface of the substrate. Subsequently, the substrate is rinsed by supplying a rinsing solution to the substrate, and then the substrate is dried by continuously rotating the susceptor 320 for a certain time. At this time, the substrate may be heated, or an inert gas may be supplied to the substrate to achieve smooth drying. To this end, the wet cleaning module 300 may further include a heater (not shown) and an inert gas sprayer (not shown). The amount of washing liquid (or rinsing solution) supplied to the substrate can be controlled so that the diffusion of the washing liquid only spreads over the surface (top) of the substrate without flowing down along the side surface or flowing to the bottom of the substrate. The amount of the washing liquid is appropriately controlled in consideration of the rotation speed of the substrate, the force according to the rotational speed of the rotation speed, and the miscellaneous force between the substrate and the washing chamber, and the washing liquid spreads over the entire surface of the substrate and the edge of the substrate is pulled out by centrifugal force' Rather than flowing down the side surface at the edge of the substrate. In this way, by controlling the amount of washing liquid, it is possible to prevent the washing liquid from contacting the side surface and the bottom portion of the substrate 'and thus preventing the occurrence of washing liquid in the lower layer of the substrate In addition, in order to prevent the washing liquid from flowing down along the side surface of the substrate, the wet cleaning module 300 may further include an auxiliary inert gas sprayer (not shown), which supplies the inert gas to the county surface of the substrate. When cleaning the substrate, 'by supplying the ship's (4) face to the substrate, the washing liquid can be prevented from flowing down along the side surface of the 201248705 42841pif substrate. In this case, 'by making the inert gas from the edge of the substrate Partially sprayed to the upper portion thereof, due to the centrifugal force, does not prevent the washing liquid from spreading across the entire top surface of the substrate, and in addition, can effectively prevent the washing liquid from flowing down along the side surface of the substrate. The load lock module 400 makes the pressure The vacuum state and the atmospheric state are changed, and a cassette (not shown) for accommodating the substrate is prepared inside the load lock module 400. The vacuum transfer module 500 transfers the substrate to the dry cleaning module 600' under vacuum. The vacuum transfer module 500 is connected to the load lock module 4. The inner side of the vacuum transfer module 500 is maintained in a vacuum state. Further, a transfer robot 510 for transferring the substrate is prepared inside the vacuum transfer module 5 Herein, the transfer robot 510 may be a dual type transfer robot including two transfer arms to improve transfer efficiency. In dry cleaning red, the dry cleaning module 6 cleans (or etches) the substrate. In this implementation, the shot provides four dry cleaning fish. The four Wei wash module is installed along the periphery of the vacuum transfer group 5GG [see Figure: 600 includes connection to the vacuum transfer module 5 The chamber 61 (the top surface of the right substrate W) is disposed at a movable side (4) chamber (4) at the air side. The pedestal 62G may include a heat exchange n to adjust the spray of the cleaning gas of the substrate _ (4) disposed in the chamber (10) The interior is embossed so that the oxidized stone layer formed on the substrate W is cleaned by a washing process. The shell is used for introducing a flux sprinkler head 630 connected to the gas supply system 64 〇 201248705 42841pif controlled The cleaning gas is not used alone in the dry cleaning, but a mixed gas including at least HF gas is used as the cleaning gas. For example, a mixed gas of HF disorder and tons of gas can be used as the cleaning gas. Each of the component gases is supplied to the gas supply secret 640 separately, so that 'until the fresh component gas is supplied to the chamber, the component gases are in this port: that is, the official is not subdivided and not green, but The gas supply system (10) includes: a gas supply passage 642 connected to the supply of each component gas, 641 (a tank containing a gas bGmbe or a fluid), and a mass flow controller (MFC) 643 , beans included in the source 641 Medium. The sprinkler head 630 is a configuration system 640 for spraying component gases into the chamber (10). In order to be effective next == head 630' sprinkler head (4) may be of a non-mixed type in which the purge gas is not mixed inside the lance 635, but is mixed after spraying it into the chamber 6i. To this end, a dual type spray _ 63 〇 can be applied, wherein at least two separate flow paths are formed in the spray (four) off. The means for spraying the purge gas into the chamber 610 may be a different type of member than the showerhead (such as a gas nozzle or a gas spray plate), or each of which may be from the lower portion of the chamber 61G (and Non-upper part), a type of component introduced. Further, a halogen lamp for heating the substrate may be additionally disposed at an upper end portion of the chamber 61?. The motto then describes the dry cleaning process. The pressure inside the chamber 610 was adjusted to 1 Torr (mTorr) to 150 Torr, and the temperature of the susceptor 16 调整 was adjusted to Celsius 201248705. HZOHipif 20 degrees to 70 degrees Celsius, and then the substrate w was loaded. The temperature of the susceptor 62 is selected within the range of the cleaning reaction most suitable for the cleaning gas, and the temperature of the susceptor 62 成 is the temperature of the wire W. At this time, in order to prevent the cleaning gas from coagulating, the wall of the chamber 6H) can be maintained at 5 degrees Celsius to 1 degree Celsius, and the shower head 630 is also maintained at 5 degrees Celsius to 15 degrees Celsius. Next, a flux-controlled HF gas is introduced from the HF gas supply system to the chamber 61G and while a flux-controlled NH3 gas is introduced into the chamber 61 from the postal gas supply system. In this manner, HF gas and NH3 gas which have been separately introduced into the chamber 61 are sprayed into the chamber 61 through the shower head 63, and the hf gas and the NH3 gas are mixed. Therefore, the yttrium oxide layer and other impurities formed on the substrate by the mixed gas are entangled. Subsequently, the pedestal 62 〇 is lifted to a position indicated by a broken line in = 5, and # etch by-product is removed by heating the substrate w at a temperature of (4) degrees Celsius to 200 degrees Celsius. The cleaning gas can be used as a carrier gas by adding at least one inert gas selected from N2, Ar & He to the gas '. In addition, a cleaning gas of 2 IPA gas can be supplied. In this case, since the fluid is at room temperature, the liquid can be vaporized by a suitable foaming or vaporizer, and then IPA is introduced. Hereinafter, a substrate using the substrate processing system described above will be described. FIG. 6 is a substrate processing method according to an embodiment of the present invention. FIG. 6 Referring to FIG. 6, the substrate to be processed is placed on the card H. Module 1 is in the middle. 12 201248705 4284lpif In this case, as described above in the prior art, a side substrate including a dentin component such as 'F, C1 or B etch gas can be used, and thus the substrate becomes _ formed on its towel The substrate is transferred to the wet cleaning module 3 via the atmospheric transfer module 2GG and the buffer member 22, and the preliminary wet cleaning process S10 is performed in the wet cleaning module 300. Next, the preliminary wet cleaning process S10 is described. First, in operation S11, by supplying a washing liquid (for example, ozone water) while rotating the substrate, the washing liquid is spread over the entire recording surface of the substrate, and any organic material on the substrate at the time of removal is removed. Ultrapure water (flushing solution) is applied to the substrate to rinse the substrate, and the substrate is dried in operation S12 to complete the preliminary wet cleaning process. Then, in the process S2, via the buffer part 22, the load lock module The 400 and the vacuum transfer module 5 are transported to the dry cleaning module 600, and the dry cleaning process S3 is performed in the dry cleaning module 60. Next, the dry cleaning process S30 is described. The substrate temperature is maintained at the most suitable cleaning step. In the case of a temperature range (2 degrees Celsius to 7 degrees Celsius), the cerium oxide layer and other impurities are reacted with the cleaning gas by spraying the cleaning gas (HF'NHs) onto the substrate in operation S31. After that, the lifting pedestal is like 'and the etching by-product is removed by heating the substrate at Celsius = 200 degrees Celsius in operation S32. Then, in the manufacturing S40, the substrate is again transferred to the wet cleaning module. 300, and performing a wet cleaning process S5〇 in the wet cleaning module 3〇〇. The wet cleaning process S50 removes the flue gas from the substrate. As described above in the prior art, such as F, C1, and Br The halogen component (the halogen component is added to the etching gas to form a pattern on the substrate during the etching process) is left inside the trench 40 of the 13 201248705 4284 lpif substrate, and then exposed to the atmosphere, the halogen component The reaction with the moisture in the atmosphere to form a solid hydrate. Next, the wet cleaning process S50 is described. In operation S51, the washing liquid is supplied to the entire surface of the substrate by supplying the washing liquid (ultra-pure water) while rotating the substrate. And the smoke is used with the lotion Then, the wet cleaning process S5 is completed by drying the substrate in operation S52. During the process after the wet cleaning process S50, it is sometimes necessary to form on the substrate for the stability of the process. a chemical oxide. In this case, the plant removes the flue gas, and then forms a chemical oxide on the substrate by supplying a washing liquid such as ozone water or ammonia water which promotes the formation of a chemical oxide to the substrate (subsequently The rinsing process can be performed, and then the substrate is dried.
Ik後，在製程S60中，在基板已自濕洗裴置傳送至卡 E模組100 a夺，完成基板的全部清洗製程，且基板進 後續製程。 在上文描述之實施例中，藉由乾洗製程移除基板上的 大部分氧化矽層及其他雜質。因此，如在典型濕洗製程中， 可防止下層（諸如SOD或BPSG)遭受損害。 严在濕洗製程中，並未完全蝕刻基板（亦即，洗液僅與 煙氣反且不與其他部分反應），且是選擇性地移除基板 上的煙氣。不同於習知技術，此舉防止下層遭受各向同性 银刻引起的損害。在此情況下，如上文所描述，藉由適當 調整洗液的供應，可防止洗液沿著側表面流下且沿著基板 之底部流下，從而防止下層遭受損害。 亦即，在本實施例中，藉由乾洗製程蝕刻基板，且在 201248705 ^84lpif 濕洗製程中移除煙氣。因此 可有效地自基板移除氧化 下層遭受損害’且另外， 當基板上存在有機材^餘刻副產物及煙氣。 在乾洗製程之後亦可能餘留在氧切層即使 料在執行乾心二=:= '，、、=::移除，從而更徹底地清洗基板。 _二_明之另一實施例的基板處理 參看^，在本實施例中，直接執行乾洗製程S110而 =订=:洗製程’且接著按順序執行基板傳送製程 “洗1程S130及基板卸載製程sl4〇。相比於上文 描述之實_，根據本實_，不執行初步減製程以便 ，少所花費的總清洗時間。因此，在乾濕製程之前不需要 單獨的濕洗製程時（例如，全部外來物質皆藉由基板上之 清洗氣體而得以溶解時），基板處理方法M 2 〇 〇可改良基板 處理方法M100的效率。 儘管已參看本發明之數個示範性實施例來描述本發 明，但應理解，熟習此項技術者可設計各種修改及替代實 施例而不脫離本發明之精神及範疇。更特定而言，有可能 在本發明、圖式及隨附申請專利範圍的範疇内在組份零件 及/或目標組合配置的配置中做出各種變化及修改。 【圖式簡單說明】 圖1是描述典型隔離層形成方法的剖視圖。 15 201248705 4284 ipif 圖2是示意地說明溝渠藉由蝕刻裝置而形成於半導體 基板中之狀態的俯視圖，在將半導體基板傳送至乾洗裝置 時，S亥半導體基板曝露至大氣，且因此在溝渠内側產生煙 氣。 圖3是根據本發明之實施例的基板處理系統的示意組 態圖。 圖4是圖3之濕洗模組的示意組態圖。 圖5是圖3之乾洗模組的示意組態圖。 圖6是根據本發明之一實施例的基板處理方法的流程 圖。 圖7是根據本發明之另一實施例的基板處理方法的流 程圖。 【主要元件符號說明】 10 ： 半導體基板 20 ： 襯墊氧化物圖案 30 ： 氮化物圖案 40 ： 溝渠 50 ： 煙氣 100 :卡匣模組 200 :大氣傳送模組 210 :傳送機械手 220 :緩衝零件 230 :輔助傳送機械手 300 :濕洗模組 201248705 42841pif 310 :腔室 320 :基座 330 :洗液喷灑器 400 :負載鎖定模組 500 :真空傳送模組 510 :傳送機械手 600 :乾洗模組 610 :腔室 620 :基座 630 :喷灑頭 640 :氣體供應系統 641 :供應源 642 :氣體供應通路 643 :質量流量控制器（MFC) 1000 :基板處理系統 M100、M200 :基板處理方法 S10 :初步濕洗製程 sn、S12、S3卜 S32、S5卜 S52 :操作 S20、S40、S60 :製程 S30、S110 :乾洗製程 S50、S130 :濕洗製程 S120 :基板傳送製程 S140 :基板卸載製程 W :基板 17After Ik, in the process S60, the substrate is transferred from the wet cleaning device to the card E module 100, and all the cleaning processes of the substrate are completed, and the substrate is processed in a subsequent process. In the embodiments described above, most of the ruthenium oxide layer and other impurities on the substrate are removed by a dry cleaning process. Therefore, as in a typical wet cleaning process, the underlying layer (such as SOD or BPSG) can be prevented from being damaged. In the wet cleaning process, the substrate is not completely etched (i.e., the lotion is only reacted with the flue gas and does not react with other portions), and the flue gas on the substrate is selectively removed. Unlike conventional techniques, this prevents the underlying layer from being damaged by isotropic silver engraving. In this case, as described above, by appropriately adjusting the supply of the washing liquid, it is possible to prevent the washing liquid from flowing down along the side surface and flowing down the bottom of the substrate, thereby preventing the lower layer from being damaged. That is, in the present embodiment, the substrate is etched by a dry cleaning process, and the flue gas is removed in the 201248705 ^84 lpif wet cleaning process. Therefore, it is possible to effectively remove the oxidized underlayer from the substrate, and additionally, when the organic material is present on the substrate, the by-product and the flue gas are present. After the dry cleaning process, it may also remain in the oxygen cut layer even if the dry core ==, ',, =:: is removed, thereby cleaning the substrate more thoroughly. Referring to the substrate processing of another embodiment of the present invention, in the present embodiment, the dry cleaning process S110 is directly performed ====washing process' and then the substrate transfer process is sequentially performed "washing process S130 and substrate unloading process" Sl4〇. Compared to the actual description described above, according to the actual _, the initial reduction process is not performed so that the total cleaning time is less. Therefore, a separate wet cleaning process is not required before the wet and dry process (for example When all foreign materials are dissolved by the cleaning gas on the substrate, the substrate processing method M 2 〇〇 can improve the efficiency of the substrate processing method M100. Although the invention has been described with reference to several exemplary embodiments of the invention However, it should be understood that those skilled in the art can devise various modifications and alternative embodiments without departing from the spirit and scope of the invention. More particularly, it is possible within the scope of the invention, the drawings and the scope of the appended claims. Various changes and modifications are made in the configuration of the component parts and/or the target combination configuration. [Schematic Description] Fig. 1 is a cross-sectional view showing a typical isolation layer forming method. 1248705 4284 ipif FIG. 2 is a plan view schematically showing a state in which a trench is formed in a semiconductor substrate by an etching device. When a semiconductor substrate is transferred to a dry cleaning device, the semiconductor substrate is exposed to the atmosphere, and thus smoke is generated inside the trench. Figure 3 is a schematic configuration diagram of a substrate processing system according to an embodiment of the present invention. Figure 4 is a schematic configuration diagram of the wet cleaning module of Figure 3. Figure 5 is a schematic configuration of the dry cleaning module of Figure 3. Figure 6 is a flow chart of a substrate processing method according to an embodiment of the present invention. Figure 7 is a flow chart of a substrate processing method according to another embodiment of the present invention. [Main Component Symbol Description] 10: Semiconductor Substrate 20 : pad oxide pattern 30 : nitride pattern 40 : trench 50 : flue gas 100 : cassette module 200 : atmospheric transfer module 210 : transfer robot 220 : buffer part 230 : auxiliary transfer robot 300 : wet wash mold Group 201248705 42841pif 310: chamber 320: pedestal 330: washing liquid sprayer 400: load lock module 500: vacuum transfer module 510: transfer robot 600: dry cleaning module 610: Room 620: Base 630: Sprinkler head 640: Gas supply system 641: Supply source 642: Gas supply path 643: Mass flow controller (MFC) 1000: Substrate processing system M100, M200: Substrate processing method S10: Initial wet cleaning Process sn, S12, S3, S32, S5, S52: Operation S20, S40, S60: Process S30, S110: Dry cleaning process S50, S130: Wet cleaning process S120: Substrate transfer process S140: Substrate unloading process W: Substrate 17