201247916 六、發明說明： 【發明所屬之技術領域】 本發明是有關木陽電池用減^鑛無，更詳細的說，係有 關一種到終止（life—end)為止的濺鍍速率固定而可均一成 膜的太陽電池用藏艘乾。 【先前技術】 作為薄膜太陽電池的光吸收層而使用的銦薄膜，一般 是藉由濺鍍使銦製的濺鍍靶（以下，也稱為銦靶）成膜。因 為銦是一種軟質材料，融點為156. 4°C之低融,點金屬，故 ·. 銦靶很多是藉由鑄造及軋延來製造。 專利文獻1是揭示，在支承板（Backing Plate)中形 成銦等之薄膜後’在此薄膜上把銦等之熔融液流入，將支 承板與靶材一體形成靶的製造方法。此方法是在藉由鑄造 等製造無材之後，以相對於將乾材在支承板上接合 (b 〇 n d i n g )之間接鎮造法是被稱為直接鑄造法的方法，由於 玎以將乾材與支承板無間隙地接合，故在藏鐘時不會發生 熱的不均，而形成均勻的膜。 專利文獻2是揭示’特徵為將銦原料分成複數次投入 鑄模中，除去此情形生成的熔融液表面的氧化銦，之後， 冷卻得到之敍:塊經表面研削而得到太陽電池用銦粗的製造 方法。此製造方法也用直接缚造法的方法，報告中指出藉 由此方法所得之靶’由於炼融液的氧化銦之捲入量少，故 能防止光吸收層的光透過率下降。 然而，以該等製造方法製造的以往之銦乾，減鍍速率 323862 4 201247916 ’係期望初 濺鍍速率。 溅鍍到某種 並不十分高’而雖以有效地成膜。在濺鍍靶中 期的濺鑛速率高，且直到終止（1 i fe — end)是^ 又’在以往之銦靶上進行濺鍍時，尤其在進行 程度時，所得到膜的均質性會有下降之問題。 [先前技術文獻] (專利文獻） 專利文獻1:日本特開昭63 — 44820鞔公報 專利文獻2 :日本特開2010 —24474銳公報 【發明内容】 [發明欲解決之課題] 其目的是提供 性下降小，進 本發明是有鑑於上述事實而作的發明， 減鑛初期的》賤鑛速率南，且藏錢速率的經時 而可以形成均質之膜的太陽電池用濺錢乾。 [解決課題之手段] 達成前述目的的本發明係一種太陽電 特徵是由靶材、支承板、及將前述靶材與用濺鍍耙，其 —錫或是銦一鎵合金製的接合材所成。其中表板接合之銦 銦製的鑄塊中藉由進行加入物理性應力之力’勒•材是指在 厚度作成原來厚度的70%以下而得到之加工°工使該鑄塊的 在本發明的太陽電池用濺鍍靶中，^柯所製成者。 τ ’前述靶材曰、 製的鑄塊中藉由進行加入物理性應力> Λ 疋以在銦 <加工使# 度作成原來厚度的50%以下而得到之加卫 塊的厚 為佳。 叫㈣造的乾材 323862 在本發明之太陽電池賴鍍乾中’前述銦— 5 錫及銦 201247916 鎵合金，其融點是以在140°C以下為佳。 在本發明之太陽電池用濺鍍靶中，前述銦-錫及銦一 鎵合金，其融點是以在130°C以下為佳。 在本發明之太陽電池用濺鍍靶中，加入前述物理性應 力的加工是以軋延（rolling)為佳。 在本發明之太陽電池用濺鍍靶中，加入前述物理性應 力的加工是以鍛造（forging)為佳。 在本發明之太陽電池用濺鍍靶中，當此之使用比率為 10%以上時，所形成的侵蝕（erosion)之最深部設定在100 //m之間距，在挾住銦結晶粒之粒界的2點測定處，測定 侵蝕之深度時的該2點間之前述深度差的平均值是以在 100 ym以下為佳。 在本發明之太陽電池用濺鍍靶中，當此之使用比率為 10%以上時，所形成的侵蝕最深部設定在lOOym之間距， 在挾住銦結晶粒之粒界的2點測定處，測定侵蝕之深度時 的該2點間之前述深度差的平均值是以在60 # m以下為佳。 [發明效果] 本發明的太陽電池用濺鍍靶，在濺鍍初期的濺鍍速率 高，並且濺鍍速率的經時性下降小，進而可以形成均質的 銦膜。總之，可以期望直到終止為止以高速率形成均質之 膜。 【實施方式】 [實施發明之最佳形態] 本發明的太陽電池用濺鍍靶，其特徵是由靶材、支承 323862 6 201247916 板、及將前述乾材與支承板接合之姻一錫或是姻一錄合金 製的接合材所成’而前述之乾村，是在銦製的鑄塊中藉由 進行加入物理性應力的加工使該鑄塊的厚度作成原來厚度 的70%以下而得到之加工材所製造者。 • 本發明的太陽電池用濺鍍靶中之靶材，係在銦製的鑄 塊中藉由進行加入物理性應力的力σ工使該鑄塊的厚度作成 原來厚度的70%以下而得到之加工材所製造的靶材。 在鑄塊中不加入物理性應力，由鑄塊製造靶材時’得 不到高的濺鍍速率。另一方面，在鑄塊中加入物理性應力 成為加主材，再由此加工材製造靶材時，即可得到高的濺 鍍速率。此之理由並不清楚，但町以認定為例如以下之理 由。 可認為是，於銦製的鑄塊中，在形成此鑄塊的結晶粒 子表面形成氧化物層，或是在表面偏存著不純物^此鑄塊 直接在靶材中使用時，構成靶材的銦結晶粒相互間的接觸 阻力會變大的原因是因為此等偏存之不純物等所造成的。 結果’認為在輸出固定時，會發生濺鐘時的電壓上昇及電 流值的減少’故而濺鑛速率變小。又，如此偏存之不純物 等’也被認為是產生電弧或電流損耗的原因。 另外’可認為是，在銦製之鑄塊中進行加入物理性應 力的加工時’於缚塊的結晶粒子表面偏存的氧化物層或不 純物是被認為被分割或是分散。其結果，構成祀材的銦結 晶粒相互間的接觸阻力變小，在輸出固定時，會得到濺鐘 時的電壓下降及電流值的增大，而判定濺鍍速率變大。又’ 323862 201247916 藉由如此之不純鱗的分割或是分散，可 流損耗之發生^ 制電弧或電 作為加入物理性應力的加工，只要有 的力道使材料變形之塑性加工即可，施加大 可以列舉：軋延、鍛造、擠壓成形、加壓等例如， 及锻造，從容易加工操作的觀點而言’由於可以丄軋延 行氧化物層或不純物的分割或分散之論點等而古確=地進 佳。 ° 故而為 前述軋延的方法’只要滿^前述條件即可而 =與對於以往銦製的鑄塊等進行的軋延同、而支： 述：造的方法’也是只要滿足心 艮制’與對於雜銦製_料崎_造法相同沒 有障礙。加入物理性應力的加工為札延時 是變成前述之加工材。加入物理性= 為鍛造時，藉由鍛造而得到的锻造板等是變成前述之加 工材。 加入物理性應力的加工程度，係使鑄塊的厚度成 來厚度的70%以下之程度，以成為_以下之程度為佳較 佳是50%以下之程度，更佳是在4〇%以下之程度。藉由加入 物理性應力的加工使鑄塊的厚度做成原來厚度的7〇%以下 時，就可以充分進行氧化物層或不純物的分割或分散，可 乂確保均勻的濺鐘速率及能形成均質的膜。鑄塊的厚度成 為原來厚度的70%以下係指，例如，供给到加入物理性應 力加工之鑄塊厚度為15mm時，經過加工後的鑄塊的厚度做 323862 〇 201247916 成10. 5mm以下之意。 銦製鑄塊之製造方法，可以使用以往進行的鑄造法而 無障礙，紗，將錠塊狀 '球狀或是粒狀等的姻材料在17〇 ^至20代中加熱轉，將得到之炫融液流人模具中，將 . 此冷卻可以得到鑄塊。 銦材料的純度是以99.99以上％為佳，以⑽.議以上 為更佳。銦材料的純度在"·咖以上時，鑄塊藉由加入物 理性應力而進行加工，則變得非常容易分散不純物。又， 不純物對太陽電池效率的影響报小 鑄塊的形狀及大小並無特别之限制，組合作為目的之 崎的形狀及大小而可以適當地決定。例如，缚塊的形狀 是板狀或是圓筒狀’其厚度通常是3至4〇丽。 由在鑄塊加人物理性應力進行加工而得到的加工材 所製造的㈣方法是無特別限制，在本發明之效果不受阻 礙下，可以適當地進行切削加工、研磨等。前述加工材中 不經加工也可以將加工材直接作為乾材來使用。 本f明的太陽電池用濺鑛乾中之接合材，係銦-錫合 金製或疋銦-鎵合金製。在使用鋼—锡合金製或是姻—錄 合金製的接合材時，可在濺鍍開始後長期維持藉由加入前 述物理性應力的加工而得到的高賤鑛逮率。 &材由於融點低於作為乾材材料的銦，故在 接〇時，在比銦融點更低的溫度中融解而可以接合。藉由 在=材材料的銦之融點更低的溫度下接合，可以防止經 由月j述加入物理性應力的加工而分斷或分散之氧化物層或 323862 9 201247916 不純物的再度凝集。因此，使用銦一錫合金製或是銦一鎵 合金製的接合材時，被認為可以維持加入前述物理性應力 的加工而得到之高錢鍍速率。 對於此，在接合材的融點與銦的融點相同時，在接合 時以與銦之融點同等以上的溫度來熔解，變成必需要接 合。在與作為靶材材料之銦的融點相同以上的溫度進行接 合時，在接合時乾材的一部分結晶粒會成長或融解。如此’ 藉由前述加入物理性應力的加工而分割或分散之氧化物膚 或不純物會再度凝集，導致成為偏存現象。結果，即難以 維持濺鍍開始後長期的高濺鍍速率。 前述銦一錫及銦一鎵合金，其融點以在140°C以下為 佳，較佳是在130°C以下，更佳是在125°C以下。銦一錫或 是銦一鎵合金之融點在140°C以下時，由於比銦之融點 (156. 4°C)更低，故容易以比銦融點低的溫度接合，可以確 實防止藉由加入前述物理性應力的加工而分割或分散之氧 化物層或不純物的再度凝集。 銦一錫及銦一鎵合金之融點的下限並無特別限制，考 慮操作及濺鍍條件等時，其融點以在65°C以上為佳。 作為銦一錫合金中之組成與融點的關係，例如，融點 為140°C以下時，銦含有比率是在44至83質量％左右，融 點為130°C以下時，銦含有比率是在47至73質量％左右。 作為銦一鎵合金中之組成與融點的關係，例如，融點 為140°C以下時，銦含有比率約為97質量％以下，融點為 130°C以下時，銦含有比率約為95質量％以下，融點為65 323862 10 201247916 C以上時’鋼含有比率約為60質量％以上 在乾材與支承板的接合中使用的接合材之量，只要是 乾材與支承板可以充分接合者即可而無特別限制^因應 靶材與支承板的大小、支承板的材料等而適當的決定。 • 树明的太陽電池用濺餘中之支承板^可以將前述 之乾材藉由前述之接合材而接合’只要有支承板所預定之 機能即可，而無特別限制，例如，可以使用銅製等之支承 板。 本發明的太陽f池贱㈣，可以將前述之㈣與支 承板藉由前述接合材並以公知的方法來接合@ mu 如’將前述㈣及支承板’以接合#轉的溫度，以低於 銦之融點的溫度，例如，在12〇至丨別它加熱使其熔解， 在支承板的接合面塗佈己炼解的接合材，貼合各別之接合 面並壓著兩面後’加以冷卻。或是，在婦與支承板的各 別接合面上塗佈接合劑，將各別的接合面貼合，將靶材及 支承板之接合材於熔解的溫度中，於低於銦融點之溫度， 例如，在120至150°C中加熱後，冷卻。 或是，將前述靶材在微低於銦融點的溫度，例如是在 120 C至150 C中加熱，將支承板在高於細融點的溫度，例 如，在170至200°C中加熱，於支承板之接合面塗佈己熔 解之接合材’將靶材與支承板之結合面貼合，並壓著兩面 後，加以冷卻。 又，本發明之太陽電池用濺鍍靶，也可以將靶材的前 驅體與支承板藉由前述接合材而接合後，在此前驅體部分 323862 11 201247916 藉由實施加工將此前驅體作成靶材來製造。靶材之前驅體 是指在禱塊進行加入物理性應力的加工而得到之前述加工 材，或是在此加工材進行切削加工、研磨等之加工而得到 之材料。 同時，本發明之太陽電池用濺鍍靶，係藉由間接鑄造 法所製造的濺鍍靶。 本發明之太陽電池用濺鍍靶，係使用與以往之銦靶同 樣條件就可以濺鍍。 在本發明之太陽電池用濺鑛靶中，其之使用比率在 10%以上時所形成的侵蝕最课部是設定在100# m間距，在 挾住銦結晶粒的粒界之2點測定處的侵蝕深度差之平均值 (以下，也稱為平均差異）是以在100//m以下為佳，60 /zm 以下為較佳，50# m以下為更佳。以下是有關此之說明。 使用比率是指，藉由滅錢減少的把材質量（丨賤鍍前的 靶材質量與濺鍍後的靶材質量之差），對濺鍍前的靶材質量 之比率。 第1圖是表示使用比率在10%以上時的靶材上面圖之 一個例子。直徑4英吋的圓盤狀的靶材1中，於此表面4 之濺鍍部，經由濺鍍而掘出的部分之侵蝕2是形成圓環 狀。侵蝕2是在面向以此圓環之外輪線與内輪線所圍夾區 域之中央部深入形成。在此圓環之前述區域的接近中央部 的最深部5是形成圓形狀。 最深部是指包含在侵蝕部中最深入形成的部分，例 如，相對於侵蝕的最大深度有90至100%深度之部分。侵 323862 12 201247916 蝕深度是指，由靶材1的表面4到侵蝕部表面為止，垂直 於表面4方向的長度。 以電子顯微鏡觀察包含此最深部的侵蝕部表面，在此 最深部分中，例如，如第1圖所示以幾乎均等間隔設置3 處以上之測定部位3，在各測定部位3中將長度10mm的線 假想成有3條以上。在此各線上，設定以100#m的間距， 挾住銦的結晶粒粒界之2個測定點。測定各測定點中之侵 蝕深度，在每一線求得此線上之2個測定點間的侵蝕深度 差（粒界差）。算出全線的粒界差之平均值，將此平均值當 作平均差（段差）。 前述侵蝕深度，例如s可以藉由表面粗糙度測定裝置 而求得，具體測定方法係在下述實施例中詳述。 由構成靶材的結晶粒大小之關係，100 M m之間距下， 設定挾住銦結晶粒粒界之2個測定點時，此2點測定處， 係在相互鄰接的2個銦結晶粒上之每一處設定。侵蝕深度 是濺鍍速率愈大則變愈深。因此，前述各組之2點測定處 中侵蝕之深度差，是表示相互鄰接之2個銦結晶粒中之濺 鍍速率差的意思。 總之，前述平均差大，係表示在相互鄰接之結晶粒 中，一方結晶粒之濺鍍速率與另一方結晶粒之濺鍍速率有 很大的差異之意思，前述平均差小，係表示在相互鄰接之 結晶粒中，一方結晶粒之濺鍍速率與另一方結晶粒之濺鍵 速率沒有很大的差異之意思。 前述平均差在100//Π1以下時，在相互鄰接之結晶粒 323862 13 201247916 間因為濺鍍速率沒有很大的差異，故可以得到靶材的濺鍍 部全面過程有均一的濺鍍速率，其結果，藉由濺鍍可以形 成均質的膜。相對於此，前述平均差比100" m大時，在相 互鄰接之結晶粒間，因為濺鍍速率有很大的差異，故靶材 的濺鍍部全面過程不能得到均一的濺鍍速率，其結果，藉 由濺鍍要形成均質的膜變得有困難。 本發明之太陽電池用濺鍍靶，在銦製之鑄塊中，藉由 進行加入物理性應力的加工，於形成此鑄塊之結晶粒的表 面偏存之氧化物層或不純物會被分割或分散，進一步，由 於藉由銦一錫合金製的接合材等接合，故可以維持分割或 分散之狀態。因此，在鄰接之結晶粒間中的濺鍍速率變的 差異不大，前述平均差即容易變成1〇〇 以下。其結果， 使用本發明之太陽電池用濺鍍靶時，可以藉由濺鍍而形成 均質之膜。 另一方面，在銦製之鑄塊中，不進行加入物理性應力 之加工時，或是即使進行前述加工，在藉由銦一錫合金製 的接合材等也沒接合時，在結晶粒表面的氧化物層或不純 物不被分割或分散，而變成偏存之狀態。因此，鄰接之結 晶粒間中的濺鍍速率變的有很大的差異，很難使前述平均 差變成100 y m以下，結果，在使用以往之太陽電池用濺鍍 靶時，即難以藉由濺鍍形成均質之膜。 前述平均差，於濺鍍進行階段及部位中很容易出現。 例如，使用比率在10%以上時，或是在前述侵蝕的最深部 分中顯著地出現。 323862 14 201247916 實施例 說明於實施例及比較例中使用的測定方法。 (體電阻、電流及電壓） 體電阻是使用三菱化學Loresta HP MCP-T410C串聯4 . 探針Probe Type ESP)，以Auto range模式在銦乾的乾 材表面以探針測定。電壓及電流值是在濺鍍中由濺鍍裝置 的電源計來讀取。 (使用比率） 使用所製作的銦靶進行濺鍍，測定實施濺鍍後之銦靶 質量。將實施濺鍍前之銦靶質量當作M!，將實施濺鍍後之 銦靶質量當作M2，將實施濺鍍前之靶材質量當作M3，則使 用比率藉由下式求得。下式中，（Mi —M2)是表示經由濺鍍 所減少之輕材質量。 [數1] 使用比率（°/。）= [(Mi-MO/iMXlOO (ί賤鍍速率） 使用所製作的銦靶以下述之條件進行濺鍍。 裝置名稱高速率減:鍵裝置真空器械工業股份有限公司ΕΧ—3013Μ 到達真空度 3. 0χ1(Γ4至8. 3xl0 — 5 Pa 〇2 流量 0 seem201247916 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to the reduction of the use of the wood-based battery, and more specifically, the sputtering rate is uniform until the end of life-end. The film-forming solar cell is dried with a Tibetan ship. [Prior Art] An indium thin film used as a light absorbing layer of a thin film solar cell is generally formed by sputtering a sputtering target (hereinafter also referred to as an indium target) made of indium. Because indium is a soft material, the melting point is 156. 4 ° C low melting, point metal, so · Indium targets are mostly made by casting and rolling. Patent Document 1 discloses a method of manufacturing a film in which a film of indium or the like is formed in a backing plate, and a molten material of indium or the like is poured into the film to form a target integrally with the target. This method is a method called direct casting method after the material is produced by casting or the like, and is bonded to the support material on the support plate (b 〇nding), because the dry material is dry. Since it is joined to the support plate without a gap, heat unevenness does not occur at the time of storage, and a uniform film is formed. Patent Document 2 discloses that the indium raw material is divided into a plurality of times into a mold, and the indium oxide on the surface of the melt produced in this case is removed, and then cooled, and the block is subjected to surface grinding to obtain a thick indium for solar cells. method. This manufacturing method is also a method of direct binding, and the report indicates that the target obtained by this method has a small amount of indium oxide in the smelting liquid, so that the light transmittance of the light absorbing layer can be prevented from decreasing. However, the conventional indium dry, manufactured by these manufacturing methods, has a desired sputtering rate of 323862 4 201247916'. Sputtering to something that is not very high' is effective in film formation. The rate of sputtering in the middle of the sputtering target is high, and until the termination (1 i fe — end) is ^ and 'sputtering on the conventional indium target, especially when the degree of progress, the homogeneity of the obtained film will be The problem of decline. [Prior Art Document] (Patent Document) Patent Document 1: Japanese Laid-Open Patent Publication No. Sho 63-44820A Patent Publication No. 2: Japanese Patent Laid-Open No. 2010-24474, the disclosure of the present invention [Problem to be solved by the invention] In the present invention, the invention has been made in view of the above facts, and the solar cell in the initial stage of the reduction of the ore is in the south, and the solar cell can be formed into a homogenous film over time. [Means for Solving the Problems] The present invention which achieves the above object is a solar electric characteristic characterized by a target material, a support plate, and a bonding material made of the target material and a sputtering tin, a tin or an indium-gallium alloy. to make. In the ingot made of indium and indium bonded by the surface plate, the force of adding physical stress is referred to as a process in which the thickness is made 70% or less of the original thickness, so that the ingot is in the present invention. The solar cell is made of a sputtering target, which is made by Ke. Preferably, the thickness of the reinforcing block obtained by adding the physical stress > Λ 前述 to the target ingot and the ingot is 50% or less of the original thickness of the indium < Dry material made of (4) 323862 In the solar cell of the present invention, the above-mentioned indium-5 tin and indium 201247916 gallium alloy preferably have a melting point of 140 ° C or less. In the sputtering target for a solar cell of the present invention, the indium-tin and indium-gallium alloy preferably have a melting point of 130 ° C or less. In the sputtering target for a solar cell of the present invention, the processing of adding the aforementioned physical stress is preferably rolling. In the sputtering target for a solar cell of the present invention, the processing for adding the aforementioned physical stress is preferably forging. In the sputtering target for a solar cell of the present invention, when the use ratio is 10% or more, the deepest portion of the formed erosion is set at a distance of 100 //m, and the particles of the indium crystal grain are trapped. At the two-point measurement point of the boundary, the average value of the depth difference between the two points when measuring the depth of the erosion is preferably 100 μm or less. In the sputtering target for a solar cell of the present invention, when the use ratio is 10% or more, the deepest part of the erosion formed is set at a distance of 100 μm, at a point where the grain boundary of the indium crystal grain is trapped at two points. The average value of the aforementioned depth difference between the two points when the depth of the erosion is measured is preferably 60 #m or less. [Effect of the Invention] The sputtering target for a solar cell of the present invention has a high sputtering rate at the initial stage of sputtering and a small decrease in the temporality of the sputtering rate, and a homogeneous indium film can be formed. In summary, it may be desirable to form a homogeneous film at a high rate until termination. [Embodiment] The best embodiment of the present invention is a sputtering target for a solar cell according to the present invention, which is characterized in that a target material, a support 323862 6 201247916 plate, and a sandwich of the dry material and the support plate are either In the ingot made of indium, the thickness of the ingot is 70% or less of the original thickness by adding physical stress to the ingot made of indium. Manufacturer of processed materials. The target in the sputtering target for a solar cell of the present invention is obtained by injecting a physical stress into the ingot made of indium, and the thickness of the ingot is made 70% or less of the original thickness. A target made of processed materials. No physical stress is added to the ingot, and a high sputtering rate is not obtained when the target is manufactured from the ingot. On the other hand, when a physical stress is added to the ingot to add a main material, and a target material is produced from the processed material, a high sputtering rate can be obtained. The reason for this is not clear, but the town has been identified as the following reasons, for example. It can be considered that in the ingot made of indium, an oxide layer is formed on the surface of the crystal particles forming the ingot, or an impurity is deposited on the surface. When the ingot is directly used in the target, the target is formed. The reason why the contact resistance between the indium crystal grains becomes large is due to such uneven impurities and the like. As a result, it is considered that when the output is fixed, a voltage rise at the time of splashing and a decrease in current value occur, so that the sputtering rate becomes small. Further, such an imperfect object or the like is also considered to be a cause of arcing or current loss. Further, it is considered that when a physical stress is applied to an ingot made of indium, an oxide layer or an impurity which is uneven on the surface of the crystal particles of the block is considered to be divided or dispersed. As a result, the contact resistance between the indium junction crystal grains constituting the coffin becomes small, and when the output is fixed, the voltage drop and the current value at the time of the sputtering are increased, and the sputtering rate is determined to be large. '323862 201247916 By the division or dispersion of such impure scales, the occurrence of flow loss can be made by arc or electricity as a process of adding physical stress, as long as there is force to plastically deform the material, the application can be large. For example, rolling, forging, extrusion molding, pressurization, etc., and forging, from the viewpoint of easy processing operation, 'because of the argument that the oxide layer or the division or dispersion of the oxide layer can be rolled, etc. Good ground. Therefore, the method of rolling as described above can be carried out as long as the above conditions are satisfied, and the rolling is performed in the same manner as in the conventional ingot made of indium, and the method of manufacturing is as follows: There is no obstacle to the same method of making indium. The processing of adding physical stress is the processing material which is the aforementioned processing material. Adding physical properties = When forging, a forged plate obtained by forging or the like is formed into the above-mentioned processing material. The degree of processing of the physical stress is such that the thickness of the ingot is 70% or less of the thickness of the ingot, preferably _ or less, preferably 50% or less, more preferably 4% or less. degree. When the thickness of the ingot is made to be less than 7〇% of the original thickness by the addition of physical stress, the division or dispersion of the oxide layer or the impurity can be sufficiently performed, and the uniform sputtering rate and homogenization can be ensured. Membrane. The thickness of the ingot is less than 70% of the original thickness. For example, when the thickness of the ingot to be added to the physical stress processing is 15 mm, the thickness of the ingot after processing is 323862 〇201247916 to 10. 5 mm or less. . In the method for producing an ingot made of indium, it is possible to use a casting method which has been conventionally carried out, and it is possible to use a yarn which is heated in an ingot-like shape, such as a spherical or granular material, from 17 to 20 generations. The smelting melt flows into the mold, and this cooling can obtain the ingot. The purity of the indium material is preferably 99.99 or more, and more preferably (10). When the purity of the indium material is above the "Call", the ingot is processed by adding physical stress, and it becomes very easy to disperse the impurities. Further, the influence of the impurity on the efficiency of the solar cell is small. The shape and size of the ingot are not particularly limited, and the combination can be appropriately determined depending on the shape and size of the object. For example, the shape of the block is a plate shape or a cylindrical shape, and its thickness is usually 3 to 4 brilliant. The method of (4) manufactured by the processed material obtained by processing the ingot and the person's rational stress is not particularly limited, and the cutting effect, the grinding, and the like can be appropriately performed without hindering the effects of the present invention. The processed material can be directly used as a dry material without processing. The bonding material for the splashing ore in the solar cell of the present invention is made of indium-tin alloy or yttrium-gallium alloy. When a joint material made of a steel-tin alloy or a sinter alloy is used, the sorghum mine catch rate obtained by adding the above-described physical stress can be maintained for a long period of time after the start of sputtering. Since the melting point is lower than that of the indium as a dry material, the material melts at a lower temperature than the indium melting point and can be joined. By bonding at a lower temperature of the melting point of indium of the material, it is possible to prevent the re-aggregation of the oxide layer which is separated or dispersed by the processing of adding physical stress, or the 323862 9 201247916 impurity. Therefore, when a bonding material made of indium-tin alloy or indium-gallium alloy is used, it is considered that the high-dip plating rate obtained by processing the physical stress can be maintained. In this case, when the melting point of the bonding material is the same as the melting point of indium, it is melted at a temperature equal to or higher than the melting point of indium at the time of bonding, and it is necessary to bond. When the temperature is the same as the melting point of indium as the target material, a part of the crystal grains of the dry material grows or melts at the time of joining. Thus, the oxide skin or the impurity which is divided or dispersed by the above-described processing by adding physical stress re-aggregates, resulting in a phenomenon of segregation. As a result, it is difficult to maintain a long-term high sputtering rate after the start of sputtering. The indium-tin-tin and indium-gallium alloys preferably have a melting point of 140 ° C or less, preferably 130 ° C or less, more preferably 125 ° C or less. When the melting point of indium-tin or indium-gallium alloy is below 140 °C, it is lower than the melting point of indium (156. 4 °C), so it is easy to bond at a lower temperature than the melting point of indium, which can be surely prevented. The agglomeration of the oxide layer or the impurity which is divided or dispersed by the addition of the aforementioned physical stress processing. The lower limit of the melting point of the indium-tin-tin and indium-gallium alloy is not particularly limited, and the melting point is preferably 65 ° C or more in consideration of handling and sputtering conditions. As a relationship between the composition and the melting point in the indium-tin alloy, for example, when the melting point is 140 ° C or less, the indium content ratio is about 44 to 83% by mass, and when the melting point is 130 ° C or less, the indium content ratio is It is about 47 to 73% by mass. As a relationship between the composition and the melting point in the indium-gallium alloy, for example, when the melting point is 140 ° C or lower, the indium content ratio is about 97% by mass or less, and when the melting point is 130 ° C or less, the indium content ratio is about 95. When the melting point is 65 323862 10 201247916 C or more, the steel content ratio is about 60% by mass or more. The amount of the bonding material used in the joining of the dry material and the support plate is sufficient as long as the dry material and the support plate are sufficiently bonded. The present invention is not particularly limited and is appropriately determined depending on the size of the target and the support plate, the material of the support plate, and the like. • The solar cell of the blazed solar cell can be bonded by the above-mentioned bonding material by the support plate in the splashing of the solar cell, as long as the function of the supporting plate is predetermined, and is not particularly limited, and for example, copper can be used. Wait for the support plate. In the solar cell of the present invention, the above-mentioned (four) and the support plate can be joined by a known method by the bonding material, and the temperature of the above-mentioned (four) and the support plate can be adjusted by the bonding #. The temperature of the melting point of indium, for example, is heated to melt it at 12 Torr, and the bonded material is coated on the joint surface of the support plate, and the respective joint faces are bonded and pressed on both sides. cool down. Alternatively, a bonding agent is applied to each joint surface of the woman and the support plate, and the respective bonding faces are bonded together, and the bonding material of the target material and the supporting plate is at a melting temperature lower than the indium melting point. The temperature, for example, is heated after heating at 120 to 150 ° C. Alternatively, the foregoing target is heated at a temperature slightly lower than the melting point of indium, for example, at 120 C to 150 C, and the support plate is heated at a temperature higher than the fine melting point, for example, at 170 to 200 ° C. The bonded material is coated on the joint surface of the support plate, and the joint surface of the target and the support plate is bonded, and the both surfaces are pressed, and then cooled. Further, in the sputtering target for a solar cell of the present invention, the precursor of the target and the support plate may be joined by the bonding material, and the precursor may be formed into a target by performing processing in the precursor portion 323862 11 201247916. Made of wood. The target precursor is a material obtained by processing a physical stress in a prayer block, or a material obtained by processing a workpiece such as cutting or polishing. Meanwhile, the sputtering target for a solar cell of the present invention is a sputtering target manufactured by an indirect casting method. The sputtering target for a solar cell of the present invention can be sputtered under the same conditions as the conventional indium target. In the sputtering target for a solar cell of the present invention, the most eroded portion formed when the use ratio is 10% or more is set at a pitch of 100# m, and is measured at a point of 2 points of the grain boundary of the indium crystal grain. The average value of the erosive depth difference (hereinafter, also referred to as the average difference) is preferably 100//m or less, more preferably 60/zm or less, and even more preferably 50#m or less. The following is a description of this. The use ratio refers to the ratio of the quality of the material (the difference between the quality of the target before plating and the quality of the target after sputtering) to the mass of the target before sputtering. Fig. 1 is a view showing an example of the above figure of the target when the use ratio is 10% or more. In the disk-shaped target 1 having a diameter of 4 inches, the portion 2 of the sputtered portion of the surface 4 which is excavated by sputtering is formed into an annular shape. The erosion 2 is formed deep in the central portion facing the area surrounded by the wheel line and the inner wheel line. The deepest portion 5 near the center portion of the aforementioned region of the ring is formed in a circular shape. The deepest part refers to the portion that is formed deepest in the eroded portion, for example, a portion having a depth of 90 to 100% with respect to the maximum depth of erosion. Invasion 323862 12 201247916 The etch depth refers to the length perpendicular to the direction of the surface 4 from the surface 4 of the target 1 to the surface of the eroded portion. The surface of the eroded portion including the deepest portion is observed with an electron microscope. In the deepest portion, for example, three or more measurement portions 3 are provided at almost equal intervals as shown in Fig. 1, and a length of 10 mm is formed in each measurement portion 3. There are more than three lines. On each of these lines, two measurement points of the crystal grain boundary of indium were trapped at a pitch of 100 #m. The depth of erosion in each measurement point was measured, and the difference in erosion depth (grain boundary difference) between the two measurement points on the line was obtained for each line. Calculate the average of the grain boundary differences across the line and use this average as the average difference (segment difference). The aforementioned etching depth, for example, s can be obtained by a surface roughness measuring device, and the specific measuring method is detailed in the following examples. According to the relationship between the size of the crystal particles constituting the target, when the two measurement points of the indium crystal grain boundary are set at a distance of 100 M m, the measurement at the two points is on two indium crystal grains adjacent to each other. Every setting. The depth of erosion is the deeper the sputtering rate. Therefore, the difference in depth of erosion in the measurement at the two points of each of the above groups means that the sputtering rate in the two indium crystal grains adjacent to each other is poor. In short, the above-mentioned average difference is large, meaning that in the crystal grains adjacent to each other, the sputtering rate of one crystal grain is greatly different from the sputtering rate of the other crystal grain, and the average difference is small, which means Among the adjacent crystal grains, the sputtering rate of one crystal grain does not greatly differ from the sputtering rate of the other crystal grain. When the average difference is less than 100//Π1, there is no significant difference in the sputtering rate between the adjacent crystal grains 323862 13 201247916, so that the sputtering process of the target sputtering portion can have a uniform sputtering rate. As a result, a homogeneous film can be formed by sputtering. On the other hand, when the average difference ratio is larger than 100" m, the sputtering rate is greatly different between the adjacent crystal grains, so that the sputtering process of the target cannot obtain a uniform sputtering rate. As a result, it becomes difficult to form a homogeneous film by sputtering. In the sputtering target for a solar cell of the present invention, in the ingot made of indium, by performing physical stress processing, an oxide layer or an impurity in which the surface of the crystal grain forming the ingot is uneven may be divided or Further, since it is joined by a bonding material made of an indium-tin alloy or the like, it is possible to maintain a state of being divided or dispersed. Therefore, the difference in the sputtering rate between the adjacent crystal grains is not large, and the average difference is likely to be 1 〇〇 or less. As a result, when the sputtering target for a solar cell of the present invention is used, a homogeneous film can be formed by sputtering. On the other hand, in the ingot made of indium, when the physical stress is not processed, or even if the above-mentioned processing is performed, the bonding material made of indium-tin alloy is not bonded, and the surface of the crystal grain is not bonded. The oxide layer or the impurity is not divided or dispersed, but becomes a state of partial storage. Therefore, the sputtering rate in the adjacent crystal grains is greatly changed, and it is difficult to make the average difference become 100 μm or less. As a result, it is difficult to splash by using a conventional sputtering target for a solar cell. A homogeneous film is formed by plating. The aforementioned average difference is likely to occur in the stage and location of the sputtering process. For example, when the use ratio is 10% or more, or in the deepest part of the aforementioned erosion, it appears remarkably. 323862 14 201247916 EXAMPLES The measurement methods used in the examples and comparative examples will be described. (Body resistance, current and voltage) The bulk resistance was measured by probe using the Mitsubishi Chemical Loresta HP MCP-T410C Series 4. Probe Probe Type ESP) in the Auto range mode on the dry surface of the indium dry. The voltage and current values are read by the power meter of the sputtering device during sputtering. (Usage ratio) Sputtering was performed using the produced indium target, and the quality of the indium target after sputtering was measured. The quality of the indium target before sputtering was taken as M!, the mass of the indium target after sputtering was taken as M2, and the mass of the target before sputtering was taken as M3, and the use ratio was obtained by the following formula. In the following formula, (Mi - M2) is the mass of the light material which is reduced by sputtering. [Number 1] Use ratio (°/.) = [(Mi-MO/iMXlOO (贱 贱 plating rate) The indium target produced was sputtered under the following conditions. Device name high rate minus: Key device vacuum device industry Co., Ltd. ΕΧ—3013Μ Reach vacuum 3. 0χ1 (Γ4 to 8. 3xl0 — 5 Pa 〇2 Flow 0 seem
Ar 流量 49 seem 濺鍍壓力 6.5xlO_1PaAr flow 49 seem Sputter pressure 6.5xlO_1Pa
輸出 154W 323862 15 201247916 基板溫度 室溫 使用玻璃 縱40 _，橫40咖，厚度〇· 8mm康寧#1737 測定母一疋時間藉由錢鑛形成的膜厚（A)及使用比 率。橫軸表示滅鑛時間、縱軸表示膜厚，作成曲線。在濺 鍍開始時前述曲線·接線的斜率當作初期速率。由使用比率 變成15%的時間中求取前述曲線接線的斜率，求取藏锻速 率’將此之數值當作使用比率15%以上時速率。 初期速率設定為R〇，使用比率15%以上時速率設定為 R15 ’藉由下述式求取滅艘速率之下降率。 [數2] 濺鍍速率下降率（％)=[(Rq— Ri5)/Rq] X 1〇〇 (平均差） 使用以上述濺鍍速率之測定方法進行濺鍍的銦靶，在 ，用比率⑽以上時所形成的圓環狀侵触之最架部中，毅 ^大致均等間隔的3處測定部位，在各測定部位中假定有 =^度10 mra的線’在此各線上設定以剛以m間距的, 測：：點。各測定點中之侵蝕的深度，自靶材之表面到各 述條件將相對於前述表面垂直方向的長度，藉由下 點中、二定。在前述9條之每條線求取此線上之2個測定 將相深度差（粒界差），將此等之平均作為平均差。 侵餘的最=!!最大深度有90至1備深度之部分，當作 323862 16 201247916Output 154W 323862 15 201247916 Substrate temperature Room temperature Use glass Vertical 40 _, horizontal 40 coffee, thickness 〇 · 8mm Corning #1737 Determine the film thickness (A) formed by the money mine and the usage ratio. The horizontal axis represents the ore-destroying time, and the vertical axis represents the film thickness, and a curve is formed. The slope of the aforementioned curve and wiring at the start of sputtering is taken as the initial rate. The slope of the aforementioned curve wiring was obtained from the time when the usage ratio was changed to 15%, and the rate of the storage forging was determined as the rate at which the use ratio was 15% or more. The initial rate is set to R〇, and the rate is set to R15' when the usage ratio is 15% or more. The rate of decline of the ship-break rate is obtained by the following equation. [Number 2] Sputtering rate reduction rate (%) = [(Rq - Ri5) / Rq] X 1 〇〇 (average difference) Using an indium target sputtered by the above-described sputtering rate measurement method, (10) In the outermost portion of the annular intrusion formed at the time of the above, the measurement points of the three measurement points which are substantially equally spaced, and the line of each of the measurement points assumed to have a degree of 10 mra are set on the respective lines. m spacing, measured:: point. The depth of erosion in each measurement point, from the surface of the target to the length of each of the conditions in the direction perpendicular to the surface, is determined by the lower point. In each of the above nine lines, two measurements on the line are obtained, and the phase depth difference (grain boundary difference) is obtained, and the average of these is taken as the average difference. The most invading =!! The maximum depth is 90 to 1 part of the depth, as 323862 16 201247916
裝置名稱表面粗糖度測定系統日本真空技術股份有限公司製DEKTAK6M 掃描長度（Scan Length) 掃描型式（Scan type) 觸針型半徑(Stylus type Radius) 觸針壓（Stylus force) 量測範圍（Meas Range) l〇〇 " m 標準掃描（Standard Scan) 12. 5 " m 15mgDevice name Surface roughness measurement system DEKTAK6M by Japan Vacuum Technology Co., Ltd. Scan Length Scan type Stylus type Radius Stylus force Measurement range (Meas Range) L〇〇" m Standard Scan 12. 5 " m 15mg
2620 KA (膜的表面粗糙度Ra) 進行以上述濺鍍速率之測定方法所示的濺鍍而得到 的銦膜，膜厚5000A時之表面粗糙度RaCam)，使用 KEYENCE 製 C0L0R3D Laser Scanning Microscope VK — 8710以下述條件測定。 [測定條件] 濾、光器：光量1 % z測定間距：0 01//m 測定模式：表面形狀 測定區域：Φ 測定品質··高精度 [實施例1] 在180°C炫解銦（純度99 99%以上），將得到的熔融液 /主入模具中’鱗造縱100mm、橫100mm、厚度15_的平板 狀禱塊。針對得到之鑄塊，使用日本Cross軋延製軋延機， 在“皿下’以乳壓減量（rollingreduction)lmm/pass 的 條件進行軋延’得到厚度9削1之軋延板。將得到的軋延板 323862 17 201247916 切成直徑102mm的圓盤狀，將兩面各使用imm銑刀（Miiiing cutter)切削作成平滑面。將此乾延圓板（歡材）及直授 110mm圓盤狀的無氧銅製支承板’將各別之接合面朝上炎 於13〇C熱板上加熱。將由銦（純度99. 99%以上）5〇質量％’ 與Sn(純度99. 99%以上）50質量％所成的合金（融點125°C) 作為接合材使用，此合金之13(TC熔融液在前述支承板之 接合面上’使用長手套（gaunt 1 et) —面拉薄延伸一面使附 著。在其上載置已加熱之前述軋延圓板，並在軋延圓板之 上以不移動之方式疊上缺碼使直接冷却，進行接合。之後， 將乾延圓板部分在旋轉盤上藉由加工成直徑1〇1 mm，厚度 6mm大小而製作銦勒^相對於此銦乾，以上述測定方法進 行各種評估。結果在表1中表示。 實施例1’係相對於前述銦靶以上述條件進行漱鍵， 在使用比率為16%時求取使用比率為15%以上時逮率及平 均差。以下之實施例及比較例中，有表丨或表2所示使用 比率時，求取使用比率為15%以上時速率及平均差。 [實施例2] 除了將軋延圓板及支承板的加熱溫度設成12〇。匸，及 作為接合材者是使用由In(純度99. 99%以上）9〇質量％與 68(純度99.99%以上）10質量％所成的合金（融點1丨5〇〇)，、 此合金之熔融液溫度設成12(rc之外，其餘與實施例i同 樣進行操作，製作銦靶。對於此銅靶，以上述剛定方法進 行各種評估，將結果在表1中表示。 [實施例3] 323862 201247916 除了將平板狀鑄塊的厚度作成18mm之外，其餘與實 施例1同樣進行操作製作銦把。對於此銦乾，以上述測 定方法進行各種評估，將結果在表1中表示。2620 KA (surface roughness Ra of the film) The indium film obtained by sputtering as shown by the measurement method of the sputtering rate described above, and the surface roughness RaCam at a film thickness of 5000 A, using KEYENCE C0L0R3D Laser Scanning Microscope VK — 8710 was measured under the following conditions. [Measurement conditions] Filter and optical device: Light amount: 1% z Measurement pitch: 0 01//m Measurement mode: Surface shape measurement area: Φ Measurement quality · High precision [Example 1] Indium (purity) was condensed at 180 °C 99 99% or more), the obtained melt/main mold is a flat-shaped prayer piece having a scale of 100 mm, a width of 100 mm, and a thickness of 15 mm. For the obtained ingot, a rolling mill was used in Japan, and the rolling sheet was rolled under the condition of rolling reduction by 1 mm/pass to obtain a rolled sheet having a thickness of 9 and 1 was obtained. Rolling plate 323862 17 201247916 Cut into a disc shape with a diameter of 102 mm, and cut each surface with an imm milling cutter (Miiiing cutter) to make a smooth surface. This dry-rolled round plate (can be used) and directly taught 110 mm disc-shaped The oxy copper support plate 'heats each of the joint faces up to 13 〇 C. It will be 50% by mass of indium (purity 99.9% or more) 5 〇 mass%' and Sn (purity 99.9% or more). % of the alloy (melting point 125 ° C) is used as a bonding material, and the alloy 13 (the TC melt is bonded to the support surface of the support plate) using a long glove (gaunt 1 et The heated rolling circular plate is placed thereon, and the missing code is stacked on the rolling circular plate so as to be directly cooled and joined. After that, the dry circular disk portion is placed on the rotating disk. By making a diameter of 1 〇 1 mm and a thickness of 6 mm, indium is produced. The evaluation was carried out by the above-mentioned measurement method, and the results are shown in Table 1. Example 1' was carried out under the above conditions with respect to the indium target, and when the use ratio was 16%, the use ratio was 15% or more. In the following examples and comparative examples, when the ratios shown in Table 丨 or Table 2 are used, the rate and the average difference are obtained when the usage ratio is 15% or more. [Example 2] The heating temperature of the circular plate and the support plate is set to 12 〇. 匸, and the bonding material is made of In (purity: 99.99% or more) 9 〇 mass% and 68 (purity 99.99% or more) 10 mass%. The alloy (melting point: 1 丨 5 〇〇), and the temperature of the molten metal of the alloy was set to 12 (rc, and the same operation as in Example i was carried out to prepare an indium target. For the copper target, the above-mentioned rigid method was used. Various evaluations were carried out, and the results are shown in Table 1. [Example 3] 323862 201247916 In the same manner as in Example 1, except that the thickness of the flat ingot was 18 mm, the indium was prepared in the same manner as in Example 1. The measurement method was subjected to various evaluations, and the results are shown in Table 1. Shows.
又’使用此銦靶進行上述濺鍍速率測定時，經由此濺 - 錄得到鋼膜’膜厚5000人時的表面使用KEYENCE製COLOR , 3D Laser Scanning Microscope VK —8710 觀察。將得到 之晝像在第2圖申表示。 [實施例4] 除了將平板狀鑄塊的厚度作成18mm，將軋延圓板及支 承板的加熱溫度設成12〇t，及作為接合材者是使用由Further, when the sputtering rate was measured using the indium target, the surface of the steel film having a film thickness of 5,000 was measured using a KEYENCE COLOR and a 3D Laser Scanning Microscope VK-8710. The image that will be obtained is shown in Figure 2. [Example 4] The heating temperature of the rolled circular plate and the support plate was set to 12 〇t, and the use as a joining material was used, except that the thickness of the flat ingot was 18 mm.
In(純度99. 99%以上）9〇質量％與Ga(純度99.99%以上）10 質量％所成的合金（融點115°C)，此合金之熔融液溫度設成 120 C之外，其餘與實施例1同樣進行操作，製作銦乾。對 於此銦乾，以上述測定方法進行各種評估，將結果在表1 中表示。 [實施例5] 除了將平板狀鑄塊的厚度作成l8mm，將軋延圓板及支 承板的加熱溫度設成100°C，及作為接合材者是使用由In (purity: 99.99% or more) 9〇 mass% and Ga (purity: 99.99% or more) 10% by mass of alloy (melting point 115 ° C), the alloy melt temperature is set to 120 C, the rest The indium was dried in the same manner as in Example 1. For the indium dry, various evaluations were carried out by the above measurement methods, and the results are shown in Table 1. [Example 5] The heating temperature of the rolled circular plate and the support plate was set to 100 ° C, and the use as a joining material was used, except that the thickness of the flat ingot was set to 18 mm.
In(純度99. 99%以上）80質量％與Ga(純度99.99%以上）2〇 質倒成的合金(融點90。〇,此合金之熔融液溫度設成 航之外，其餘與實施例i同樣進行操作，製作銦靶。對 於此銦靶’以上述測定方法進行各種評估，將結果在表工 中表示。 [實施例6] 323862 19 201247916 除了將平板狀鑄塊的厚度作成22 5min之外，其餘與 實施例1同樣進行操作，製作銦靶。對於此銦靶，以上述 測疋方法進行各種評估，將結果在表】中表示。 又’使用此麵乾進行上述濺鍍速率測定時，經由此濺 鍵付到鋼膜’膜厚5000Λ時的表面以與實施例3同樣條件 觀察。將得到之晝像在第3圖中表示。 [實施例7] 除了平板狀鑄塊的厚度作成18mm及對於此铸塊進行 軋延，改成將此鑄塊全面以手拿槌子槌打鍛造，使鑄塊的 厚度作成9imn之外，其餘與實施例1同樣進行操作，製作 銦輕。對於此練，以上述測定方法進行各種評估，將結 果在表1十表示。 [比較例1] 罝從110mm的圓盤狀無氧銅支承板中，將内徑L 咖的不轴製圓筒模具，使此之中心線對著前述支承板 中心線裝配，使模具不動之方式用钳子（clamp)來固定。 此在熱板上加熱到·。c(翻的融點以上） 將⑽純度99·99%以上），使熔解後之厚度成為？丽方式 =’：解後，將表面之氧化物去除，經冷却使钢炫融液 此凝固體使用旋轉盤加工成直徑101随，厚度6l 之圓盤狀’製作銦乾。對於此銦乾，以上述敎方法進 各種s平估’將結果在表2中表示。 ^又，使用此銦靶進行上述濺鍍速率測定時，經由此濺 錢得到銦膜，膜厚漏Α時的表面以與實施例3同樣條件 323862 ' 20 201247916 觀察。將得到之晝像在第4圖中表示。 [比較例2] 除了平板狀縳塊的厚度作成9mm及在此鎢塊不進行札 延而疋將此鑄塊直接切削成直徑1〇2咖圓盤狀，並使用 、lmm研磨機將兩面切削成平滑面之外，其餘與實施例1同 ;樣進行操作，製作銦把。對於此銦乾，以上述測定方法進 行各種評估，將結果在表2中表示。 [比較例3] 除了將平板狀鑄塊的厚度作成11pm之外，其餘與實 施例1同樣進行操作，製作銦靶。對於此銦靶，以上述測 定方法進行各種評估，將結果在表2中表示。 [比較例4] 在180°C熔解銦（純度99, 99%以上），將得到的熔融液 注入模具中，鑄造縱1〇〇_、橫l〇〇mm、厚度15mm的平板 狀鍀塊。對於得到之鑄塊，使用日本Cross軋延製軋延機， 在常溫下’以教》壓減量l_/pass的條件進行軋延，將鑄 塊厚度做成9丽。將得到的軋延板切成直徑1〇2丽的圓盤 狀’各使用lmm研磨機（Milling cutter)將兩面切削成平 滑面。將此軋延圓板及直徑11 Omm的圓盤狀無氧銅製支承 板’將各別的接合面朝上裝載於熱板上。使乳延圓板成為 140°C，支承板成為180°C之方式加熱。將銦（純度99. 99% 以上）金屬（融點156· 4°C)作為接合材使用，此銦金屬之 180°C熔融液在前述支承板之接合面上，以長手套一面拉薄 延伸一面使附著。在其上載置已加熱之前述軋延圓板，以 323862 21 201247916 :移動之方式純延陳以切碼並直接冷却，進行接 ^之後，藉由旋轉盤將軋延圓板部分加工成直徑⑻丽、 厚度6_之大小而製作_。相對於此錮m述測定 方法進行各種評估。結果在表2中表示。 [比較例5] 除了將平板狀鑄塊的厚度作成18mm之外，其餘盘比 較例4同樣進行操作，製作姉。對於此峰，以上述測 定方法進行各種評估，將結果在表2中表示。 [比較例6] 除了將鑄塊的厚度作成10. 5mm之外，其餘與實施例7 同樣進行操作，製作銦靶。對於此銦靶，以上述測定方法 進行各種評估’將結果在表2中表示。 [表1] 物理性;ίΞ~~ 加工比* 接合材 _ y施例1 軋延 _ 60¾ 實施例2 軋延 60% 實施例3 轧廷 50Χ 實施例4 軋延 50% 實施例5 軋延 5〇x 實施例6 軋延 40¾ 實施例7 鍛造 50¾ In*Sn=5〇wt J^BOwt% In'-Ga=9〇w In：Sn=50wt %：50vrt% In：Ga=90w t%：10wt% In-Ga=80w t%：20wt% In:Sn=50wt %*50wt°/〇 In：Sn=50wt %：60wt% 瓶％限 (Q *cm) 電流(rwA) 费 ΕΚ /Λ，、 Η 3.97X10·6 366 3.95xl0‘8 368 3_86xl0.6 393 3.84xl〇·6 391 3.87x10® 396 3.82x10 s 400 3.92x10 s 378 VVJ 初期ΐί军 (ΑΛ) 435 94 433 95 406 104 405 101 401 104 399 108 422 97 CO平（% 15X以上時 _^AA) — 88 16 90 20 98 18 19 21 15 97 102 105 88 濺鍍速率 (%) 93.6 94.7 94.2 96.0 98.1 97-2 90.7 平均差 膜之表面瓦^^· .Ra("m、 —48 43 44 41 36 38 57 0.04 0-06 0.04 0.05 0.05 0.03 0.06 ※物理性加工後之鑄塊厚度對物理性加工前之鑄塊厚度的比率 ※※使用比率15%以上時之速率 323862 22 201247916 [表2] 比較例1 比較例2 比較例3 比較例4 比較例5 比較例6 物理性加工 無 無 軋延 軋延 軋延 鍛造 加工比"· 82% 60% .50% 86% 接合材 In In*Sn=50wt %:50wt% In：Sn=50wt %：B0wt% In In In:Sn=50wt %-50wt% 體電阻 (Q-cm) 4.10X10'6 4.15X10'5 4.03X10·5 3.95X10'5 3.84X10·5 409x10s 電流(mA) 320 318 331 358 389 322 電壓（V) 493 501 470 441 413 490 初期速率 CA/s) 71 67 78 90 102 75 使用比率(％) 23 15 18 24 22 15 15%以上時之速率 w CA/s) 66 61 74 56 59 67 濺鍍速率之下降率 (%) 93.0 91.0 94.9 62.2 57.8 89.3 平均差C/im) 162 158 83 138 132 101 膜之表面粕链度 RaC/^m) 0.10 0.10 0.08 0.08 0.08 0.09 ※物理性加工後之鑄塊厚度對物理性加工前之鑄塊厚度的比率 ※※使用比率15%以上時之速率 由表1中之實施例 〇久υ，畀衣ώ 丫〈 t匕較例2及 3之比較’可㈣狀厚絲由進行軋延作絲來厚度之 70%以下’使得狀崎㈣初㈣率變高，而此雜乾經 藏鍍而得狀銦_表面_度變小。由第2圖及第3圖 與第4圖Μ較，可知舰之厚度藉由賴軋延作成原來 厚度之m以下而得到之濺料而經麟而得的銦膜，其 表面粗糖度較小。又，由矣] 衣1中之實施例7與比較例6之 比較’可知鑄塊之厚度藉_行_作成原來厚度之· 以下’也得到與軋延的情形。 ^纟實&例2與比較例4的比較以及實施例3至5 ,、比交例5的比較’可知例如即使將鑄塊之厚度作成原來 323862 23 201247916 厚度之70%以下進行軋延而得到初期速率高之濺鍍靶時， 使用銦-錫及銦一鎵合金製之接合材以外之接合材接合乾 3 =承板時’隨著濺鍍之進行，濺鍍速率大為下降。相 '*，可知鑄塊之厚度作成原來厚度之7〇%以下進 延，進—步偻用細 用銦一錫或是銦一鎵合金製之接合材接合靶 农承板時，初期速率高，即使進一步進行濺鍍，濺鍍 迷罕之下降亦小。 【圖式簡單說明】 個例 第1圖表示使用比率在10%以上時的靶材上面圖之— 鋼 圖表示使用實施例3的銦把進行滅鍍時得 膜表面之顯微鏡照片。 的 固表示使用實施例6的銦靶進行濺鍍時得到 膜表面之顯微鏡Μ。 叫的鋼 第4圖表示使用 膜表面之顯微鏡照片 【主 要元件符號說明 1 乾材 2 侵餘 3 測定部位 4 表面 5 最深部 的銦 323862 24In (purity: 99.99% or more) 80% by mass and Ga (purity: 99.99% or more) 2 bismuth alloy (melting point 90. 〇, the temperature of the melt of the alloy is set to be aeronautical, and the rest and examples i was also operated to produce an indium target. Various evaluations were performed on the indium target' by the above-described measurement method, and the results were shown in the table. [Example 6] 323862 19 201247916 In addition to the thickness of the flat ingot was 22 5 min. The indium target was produced in the same manner as in Example 1. The indium target was subjected to various evaluations by the above-described measurement method, and the results are shown in the table. The surface of the steel film '5000 Å thick by the sputtering key was observed under the same conditions as in Example 3. The obtained image was shown in Fig. 3. [Example 7] In addition to the thickness of the flat ingot 18 mm and rolling the ingot, the ingot was completely forged by hand with a tweezers, and the thickness of the ingot was made to be 9 imn, and the same operation as in Example 1 was carried out to make indium light. Practice, using the above measurement method For various evaluations, the results are shown in Table 10. [Comparative Example 1] From a disc-shaped oxygen-free copper support plate of 110 mm, a non-shaft cylinder mold having an inner diameter L was placed so that the center line was opposed thereto. The center line of the support plate is assembled, and the mold is fixed by means of a clamp. The heat is heated on the hot plate to (c) the melting point (more than 99. 99%), so that after melting, What is the thickness?丽 mode =': After the solution, the oxide of the surface is removed, and the steel is melted by cooling. The solidified body is processed into a disc shape of a diameter of 101 by using a rotating disk, and the indium is dried. For this indium dry, various s-flats were evaluated by the above-mentioned enthalpy method. The results are shown in Table 2. Further, when the sputtering rate was measured using the indium target, the indium film was obtained by the sputtering, and the surface at the time of film thickness leakage was observed under the same conditions as in Example 3, 323862 '20 201247916. The image obtained will be shown in Fig. 4. [Comparative Example 2] The ingot was directly cut into a diameter of 1 〇 2 coffee disc, except that the thickness of the flat block was set to 9 mm and the tungsten block was not drawn, and the two sides were cut using a lmm grinder. Except for the smooth surface, the same operation as in Example 1 was carried out to prepare an indium handle. For this indium dryness, various evaluations were carried out by the above measurement methods, and the results are shown in Table 2. [Comparative Example 3] An indium target was produced in the same manner as in Example 1 except that the thickness of the flat ingot was 11 pm. For this indium target, various evaluations were carried out by the above-described measurement methods, and the results are shown in Table 2. [Comparative Example 4] Indium (purity: 99, 99% or more) was melted at 180 ° C, and the obtained melt was poured into a mold to cast a flat block having a vertical length of 1 〇〇, a width of 100 mm, and a thickness of 15 mm. For the obtained ingot, a Japanese Cross rolling mill was used, and rolling was carried out under the condition of a reduction of l_/pass at a normal temperature to make the thickness of the ingot 9. The obtained rolled sheet was cut into discs having a diameter of 1 〇 2 ’ each of which was cut into a smooth surface using a 1 mm Milling cutter. The rolled circular plate and the disk-shaped oxygen-free copper support plate having a diameter of 11 mm were placed on the hot plate with the respective joint faces facing up. The milk-extending disk was heated to 140 ° C, and the support plate was heated to 180 ° C. Indium (purity: 99.99% or more) metal (melting point 156·4 ° C) is used as a bonding material, and the 180 ° C melt of the indium metal is stretched and extended on one side of the support plate on the joint surface of the support plate. One side makes it adhere. The rolled rolling disc which has been heated is placed on the 323862 21 201247916: moving by means of cutting and directly cooling, after the joining, the rolled disc portion is processed into a diameter by a rotating disc (8) Li, thickness 6_ to make _. Various evaluations were made in relation to the measurement method described herein. The results are shown in Table 2. [Comparative Example 5] The same procedure as in Example 4 was carried out except that the thickness of the flat ingot was 18 mm, and crucible was produced. For this peak, various evaluations were carried out by the above measurement methods, and the results are shown in Table 2. [Comparative Example 6] An indium target was produced in the same manner as in Example 7 except that the thickness of the ingot was changed to 10.5 mm. For this indium target, various evaluations were carried out by the above measurement methods. The results are shown in Table 2. [Table 1] Physical; Ξ Ξ ~ ~ Processing ratio * Bonding material _ y Example 1 Rolling _ 603⁄4 Example 2 Rolling 60% Example 3 Rolling 50 Χ Example 4 Rolling 50% Example 5 Rolling 5 〇x Example 6 Rolling 403⁄4 Example 7 Forging 503⁄4 In*Sn=5〇wt J^BOwt% In'-Ga=9〇w In:Sn=50wt %:50vrt% In:Ga=90w t%:10wt % In-Ga=80w t%: 20wt% In:Sn=50wt%*50wt°/〇In:Sn=50wt%:60wt% Bottle% limit (Q*cm) Current (rwA) Fee/ΕΚ,, Η 3.97X10·6 366 3.95xl0'8 368 3_86xl0.6 393 3.84xl〇·6 391 3.87x10® 396 3.82x10 s 400 3.92x10 s 378 VVJ Initial ΐί军 (ΑΛ) 435 94 433 95 406 104 405 101 401 104 399 108 422 97 CO flat (% 15X or more _^AA) — 88 16 90 20 98 18 19 21 15 97 102 105 88 Sputtering rate (%) 93.6 94.7 94.2 96.0 98.1 97-2 90.7 Average surface film of the film ^ ^· .Ra("m, —48 43 44 41 36 38 57 0.04 0-06 0.04 0.05 0.05 0.03 0.06 ※The ratio of the thickness of the ingot after physical processing to the thickness of the ingot before physical processing ※※Usage ratio Rate at 15% or more 323862 22 201247916 [Table 2] Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Comparative Example 5 Comparative Example 6 Physical processing without rolling/rolling rolling and rolling forging processing ratio "· 82% 60% .50% 86% Joiner In In*Sn=50wt %: 50wt% In:Sn=50wt%:B0wt% In In In:Sn=50wt%-50wt% Body resistance (Q-cm) 4.10X10'6 4.15X10'5 4.03X10·5 3.95X10'5 3.84X10·5 409x10s Current ( mA) 320 318 331 358 389 322 Voltage (V) 493 501 470 441 413 490 Initial rate CA/s) 71 67 78 90 102 75 Use ratio (%) 23 15 18 24 22 15 Rate above 15% w CA/ s) 66 61 74 56 59 67 Rate of decrease in sputtering rate (%) 93.0 91.0 94.9 62.2 57.8 89.3 Average difference C/im) 162 158 83 138 132 101 Surface 粕 chain degree RaC/^m) 0.10 0.10 0.08 0.08 0.08 0.09 * The ratio of the thickness of the ingot after physical processing to the thickness of the ingot before physical processing ※※ The rate at which the ratio is 15% or more is shown in Table 1 for a long time, 畀衣ώ 丫< t匕Compared with the comparison of the examples 2 and 3, the thickness of the (four) thick wire is less than 70% of the thickness of the rolled wire, which makes the initial (four) rate of the smear (four) become higher, and the dry and dried plate is plated to obtain indium _ surface _ SmallerIn comparison with Fig. 2 and Fig. 3 and Fig. 4, it can be seen that the thickness of the ship is obtained by stretching the original thickness to a thickness of m or less, and the indium film obtained by the lining has a small surface roughness. . Further, from the comparison between the seventh embodiment and the comparative example 6 in the garment 1, it can be seen that the thickness of the ingot is the same as that of the original thickness. ^Compacting and comparing the comparison of Example 2 with Comparative Example 4 and Examples 3 to 5, and comparing with Example 5, it is understood that, for example, even if the thickness of the ingot is made 70% or less of the thickness of the original 323862 23 201247916, the rolling is performed. When a sputtering target having a high initial rate is obtained, a bonding material other than the bonding material made of indium-tin and indium-gallium alloy is used to bond dry 3 = when the carrier is placed, and the sputtering rate is greatly lowered as the sputtering progresses. Phase '*, it can be seen that the thickness of the ingot is made to be less than 7〇% of the original thickness, and the initial rate is high when the joint material is made of a joint material made of indium-tin or indium-gallium alloy. Even with further sputtering, the drop in sputtering is small. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 shows a top view of a target when the use ratio is 10% or more. The steel figure shows a micrograph of the surface of the film obtained by performing the extinction using the indium of Example 3. The solid state indicates that the surface of the film was obtained by sputtering using the indium target of Example 6. Steel called Figure 4 shows a photomicrograph of the surface of the film. [Main component symbol description 1 Dry material 2 Invasion 3 Measurement site 4 Surface 5 The deepest indium 323862 24