TW201243523A - Alignment method for mask and work-piece - Google Patents

Alignment method for mask and work-piece Download PDF

Info

Publication number
TW201243523A
TW201243523A TW101107484A TW101107484A TW201243523A TW 201243523 A TW201243523 A TW 201243523A TW 101107484 A TW101107484 A TW 101107484A TW 101107484 A TW101107484 A TW 101107484A TW 201243523 A TW201243523 A TW 201243523A
Authority
TW
Taiwan
Prior art keywords
mask
workpiece
mark
pattern
marks
Prior art date
Application number
TW101107484A
Other languages
Chinese (zh)
Other versions
TWI452447B (en
Inventor
Ryoichi Mishio
Toyoharu Inoue
Original Assignee
Ushio Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Electric Inc filed Critical Ushio Electric Inc
Publication of TW201243523A publication Critical patent/TW201243523A/en
Application granted granted Critical
Publication of TWI452447B publication Critical patent/TWI452447B/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073Alignment marks and their environment
    • G03F9/7084Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70775Position control, e.g. interferometers or encoders for determining the stage position
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003Alignment type or strategy, e.g. leveling, global alignment
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023Aligning or positioning in direction perpendicular to substrate surface
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073Alignment marks and their environment
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

Abstract

This invention is to prevent large deviation among the following positions: the position of the pattern formed on the work-piece by the projection exposure, the position of the pattern formed by the previous exposure process, and the position of mask pattern of the screen printing to be used in the next processing. In aligning the projection exposure apparatus, it is performed by enlarging or reducing the projection magnification of the pattern of the aforementioned mask (M), and making the mask (M) and the work-piece (W) move for aligning the mask (M) and the work-piece (W), in such a manner that the sum of deviation between the mask marks (MAM1 to 4) of mask (M) and the work-piece marks (WAM1 to 4) (dR) plus the deviation amount (dM) between mask marks (MAM1 to 4) of the masks and the reference position of mask marks (SAM1 to 4) of the screen printing masks used in the next processing is minimized.

Description

201243523 六、發明說明: 【發明所屬之技術領域】 本發明係關於在工件上投影並曝光遮罩圖案的投影曝 光裝置之遮罩與工件的對位方法,尤其,關於在處理工程 中伸縮而大小改變之工件爲對象,且前述對位時考慮下個 工程之對位來進行對位,藉此,在該投影曝光處理的下個 工程中’即使在進行如焊料的網版印刷、接觸式曝光、接 近式曝光之使大小一定的遮罩與工件接觸或接近,將遮罩 圖案轉印至工件上的作業時,不產生較大之偏離,可進行 前述大小一定之遮罩與工件的對位之遮罩與工件的對位方 法者。 【先前技術】 作爲進行投影曝光,在下個工程中使遮罩與工件密接 而將遮罩圖案轉印至工件的範例,在此以網版印刷爲例進 行說明。 於印刷基板等的製造中,藉由投影曝光裝置進行將遮 罩圖案轉印至工件上的處理,而於工件形成配線焊墊的圖 案,之後,進行於形成之配線焊墊上藉由網版印刷印刷焊 料的作業。 於圖9揭示前述配線焊墊與被印刷(塗佈)焊料之配 線焊墊的槪念圖。 如同圖(a )所示,藉由投影曝光處理等,於基板( 工件)上形成由銅等的導體所構成之配線圖案Pp與配線 -5- 201243523 焊墊P d,如同圖(b )所示,於配線焊墊p d上,藉由網 版印刷來印刷(塗佈)焊料S。 前述網版印刷係重疊對合遮罩與形成前述配線焊墊的 工件,於遮罩上塗佈焊料,並於工件上對應設置於遮罩之 開口部分的位置,塗佈焊料者。再者,在於前述工件形成 配線焊墊之圖案的工程中,因爲印刷電路基板(工件)會 伸縮,故在投影曝光時,因應工件的伸縮而使投影之遮罩 圖案像的倍率變化。 另一方面,在前述網版印刷中,因爲使遮罩密接工件 而塗佈焊料,無法如投影曝光,故因應工件的伸縮而使投 影之遮罩圖案像的倍率變化,使用考慮前述工件的伸縮而 預先設定大小之遮罩來進行。 如以上般,於印刷電路基板等的工件形成配線焊墊的 圖案,於形成之配線焊墊上載置(印刷)焊料的工程大槪 如下所述。 (A )藉由投影曝光裝置,於形成配線圖案的工件,形成 配線焊墊的圖案。 (B )藉由網版印刷裝置,於形成在工件之配線焊墊上印 刷焊料。 針對前述處理,更進行具體說明。 (A)投影曝光所致之工件的配線焊墊之圖案的形成 首先針對前述(A)的工程進行說明。再者,在此工 程之前,工件已經形成配線圖案。 藉由投影曝光裝置,將形成配線焊墊之圖案的遮罩, -6 - 201243523 與塗佈光阻劑之工件(已經形成配線圖案),以所定位置 關係進行對位(校準)’之後,隔著此遮罩來照射曝光光 線。藉此,在工件的所定位置,配線焊墊的圖案被轉印( 曝光)至工件。 具備前述曝光處理所使用之投影鏡頭的曝光裝置之一 例記載於專利文獻1(日本特開平9-82615) »使用圖10 來說明藉由同公報的圖1等所揭示之曝光裝置,進行前述 對位時的動作。再者,於圖10中,因爲圖式會過於複雜 ,故省略形成於工件的配線圖案。 如圖10(a)所示,於遮罩Μ形成有形成在工件W之 配線焊墊的圖案Ρ。工件W係印刷電路基板等的樹脂基板 〇 投影鏡頭(參照專利文獻1的圖1)係將形成於遮罩 Μ之圖案Ρ投影至工件W上的鏡頭,投影鏡頭係具備變 焦機構,可因應工件的伸縮而使投影之圖案像的倍率變化 〇 於曝光處理中,爲了在工件W的所定位置形成配線 焊墊Pd,在進行曝光之前,進行遮罩Μ與工件W的對位 。爲此,如圖10(a)所示,於遮罩Μ形成遮罩·校準標 記(以下稱爲遮罩標記ΜΑΜ ),於工件形成工件•校準 標記(以下稱爲工件標記WAM)。 遮罩與工件的對位係因爲針對平面內之兩方向(X方 向與Υ方向)及旋轉方向(0方向)來進行,故遮罩標記 ΜΑΜ與工件標記WAM分別在兩處以上形成。於圖1 0中 201243523 ,遮罩標記MAM與工件標記WAM係分別形成4個。 遮罩標記MAM與工件標記WAM的檢測係藉由校準 顯微鏡(參照專利文獻1的圖1等)來進行。校準顯微鏡 係配合形成之遮罩標記與工件標記的數量來設置。 遮罩Μ與工件W的對位之順序係如下所述。 (a)藉由校準顯微鏡來檢測出利用投影鏡頭所投影之遮 罩標記MAM。又,藉由校準顯微鏡來檢測出形成於工件 W的工件標記WAM。 (b )將藉由校準顯微鏡所檢測出之遮罩標記MAM與工件 標記WAM於裝置的控制部中進行畫像處理,求出各別的 位置座標。 (c )以工件標記WAM與遮罩標記MAM之位置的偏離量 之總和成爲最小(理想爲一致)之方式,將遮罩Μ或工件 W往ΧΥ0方向移動。又,在工件W伸縮變形而大小產生 變化時,藉由投影鏡頭的變焦機構,改變投影至工件W 上之遮罩圖案像的倍率。 (d)如圖10(b)所示,將左上的遮罩標記MAM1與工 件標記WAM1的偏離量設爲dRl,同樣地將右上的遮罩標 記MAM2與工件標記WAM2的偏離量設爲dR2,將左下的 遮罩標記MAM3與工件標記WAM3的偏離量設爲dR3,將 右下的遮罩標記MAM4與工件標記WAM4的偏離量設爲 dR4 (於圖的右側,放大揭示MAM4與WAM4的偏離量 dR4)的話,4處遮罩標記MAM與工件標記W AM之偏離 量的總和以以下計算式(1)表示。 -8- '201243523 然後,如圖10(c)所示,以前述偏離量dR 變成最小之方式,改變(藉由投影鏡頭)投影至工 遮罩圖案像的倍率,又,使遮罩與工件往ΧΥ0方 移動。 〔數1〕 4 Σ (dR?).....⑴ i = l * (e )結束對位之後,對於工件W隔著遮罩Μ照射 線,將形成於遮罩Μ之圖案曝光至工件W上。藉 形成於工件W之配線圖案的所定位置,形成配線焊 (Β )接著,針對(Β )的網版印刷工程,使用圖 12、圖1 3來進行說明β 圖11係揭示使用於網版印刷之遮罩ScM (以 爲網版遮罩或金屬遮罩)之一例的圖,圖12係說 印刷裝置所致之作業的圖,圖1 3係揭示其順序的 〇 再者,關於前述網版印刷技術,例如記載於專 2的段落〇〇〇4〜0006、圖9,及專利文獻3的段落 圖6等。 以下,藉由前述圖11〜圖13,說明焊料塗佈 致之3:件的焊料塗佈(網版印刷)順序的槪要。 (a)藉由未圖示的搬送機構,工件W被置放並保 12(a)所示之工件台14上。再者,於工件形成電 的總和 件上之 向相對 曝光光 此,在 墊。 1 1、圖 下,稱 明網版 流程圖 利文獻 0005 ' 裝置所 持於圖 路圖案 -9 - 201243523 (b) 工件台驅動機構(未圖示)動作, (Z方向移動)至網版遮罩ScM與工f 止(圖13的步驟S1)。 再者’網版印刷所使用之網版遮罩 示’於形成前述圖9所示之配線焊墊的 設置開口者,雖然同圖並未揭示,但是 所用之遮罩相同,於網版遮罩ScM,也 標記(網版遮罩的校準標記或第2遮罩 有貫通孔。 (c) 於網版遮罩ScM上,插入圖12 微鏡16(_13的步驟S2)。 校準顯微鏡16係同時檢測出遮罩捐 工件W的工件標記WAM。亦即,校準| 遮罩標記SAM的貫通孔中檢測出工件標 的步驟S3 )。 (d) 焊料塗佈裝置的控制部(未圖示 遮罩標記SAM與工件標記WAM的位置 WAM對準身爲貫通孔的遮罩標記SAM 由工件台驅動機構1 5使工件台1 4往X 左右方向)、Y方向(例如於同圖中對 )、0方向(以垂直於工件台面之軸爲 進行網版遮罩ScM與工件W的對位(杉 驟 S4)。 再者,網版遮罩ScM與工件W的 工件台14會上升 戸W接近之位置爲 ScM係如圖1 1所 位置所對應之位置 ,與在曝光裝置中 在4處,作爲校準 標記)SAM,形成 (a )所示之校準顯 異記SAM與形成於 頁微鏡1 6係於身爲 I 記 WAM。(圖 13 )係依據檢測出之 資訊,以工件標記 的中心之方式,藉 方向(例如同圖的 於紙面爲垂直方向 中心旋轉)移動, 芒準)(圖13的步 對位,係使遮罩台 -10- 201243523 13移動來進行亦可,使工件台14與遮罩台13雙方 進行亦可。 (e) 校準結束後,藉由工件台驅動機構使工件台1 ,使網版遮罩ScM與工件W接觸(圖13的步驟S5 (f) 如圖12(b)所示,在使網版遮罩ScM與工伯 觸之狀態下,利用稱爲刮刀1 5的薄板,使焊料( 一邊捲動,一邊通過網版遮罩ScM的開口上,塗佈 W。於工件W,僅在形成網版遮罩ScM的開口之部 成焊料,形成焊料焊墊(圖13的步驟S6)。 (g) 焊料的塗佈結束時,工件台驅動機構會動作 12(c)所示,工件台14下降(圖13的步驟S7)。 (h) 藉由未圖示的搬送機構,焊料的塗佈(焊料 形成)結束之工件W從工件台14被搬出至塗佈裝· 如圖9所示,焊料S係塗佈於配線焊墊P<1上 ,形成於工件W之配線焊墊Pd的位置與網版遮罩 開口的位置不一致的話,於配線焊墊Pd上未印刷 )焊料S,會成爲斷線或短路等之問題的原因。 再者,如此,進行投影曝光後,使遮罩密接或 件來處理的作業係如前述般不限於進行網版印刷之 例如,進行投影曝光之後再進行接觸式曝光、接近 之狀況也相同。 〔先前技術文獻〕 〔專利文獻〕 〔專利文獻1〕日本特開平9 - 8 2 6 1 5號公報 移動來 4上升 )0 P W接 焊膏) 於工件 分,形 ,如圖 焊墊的 [外。 ,但是 ScM之 (塗佈 接近工 狀況, 式曝光 -11 - 201243523 〔專利文獻2〕日本特開平8-264932號公報 〔專利文獻3〕日本特開2003-53932號公報 【發明內容】 〔發明所欲解決之課題〕 前述網版印刷係將圖1 4 ( a )所示之形成開口的網版 遮罩(金屬遮罩)ScM載置於同圖(b)所示之工件w上 ,如同圖(c )所示’以形成於工件之工件標記WAM與第 2遮罩標記SAM的位置一致之方式,使網版遮罩ScM與 工件W相對地往ΧΥ β方向移動來進行對位。然後,如前 述般,利用刮刀15,於網版遮罩ScM的開口塡充焊料S ,並將焊料S印刷至工件的配線焊墊上。 如圖14所示,如果工件W不伸縮,與網版遮罩ScM 相同大小的話,遮罩ScM的開口與工件W上的配線焊墊 Pd可不偏離地一致。 但是,作爲前述工件W來使用的印刷電路基板係爲 了增層(built up),重複層合與熱硬化的工程。因爲此 工程的重複,印刷電路基板大多會逐漸收縮。 基板收縮時,如圖1 5 ( a )所示,形成於其上的工件 標記WAM的位置也會變化。具體來說,形成於基板之配 線圖案的大小整體會縮小基板收縮之分量。 使用先前技術中所示之投影曝光裝置的話’可藉由使 投影鏡頭的倍率變化,對於因基板的收縮而位置變化之配 線圖案及工件標記,改變遮罩圖案的大小來進行遮罩與工 -12- 201243523 件的對位。 藉此,曝光裝置係可配合因工件的收縮而整體縮小 配線圖案,偏離形成配線焊墊的位置。 但是,用以將焊料印刷至配線焊墊的網版印刷機的 版遮罩ScM係基本上,想定形成於未產生伸縮之基板的 線焊墊之位置來形成開口。亦即,依據未伸縮的圖案來 成開口。 然後,此網版遮罩係直接載置於工件上來使用者, 法如投影曝光,配合基板的變形來改變開口圖案的倍率 爲此,於投影曝光裝置中,如圖15(a)所示,例 配合因基板(工件W)的收縮而縮小之配線圖案,於工 W,形成偏離位置之配線焊墊Pd的話,將圖1 5 ( b )所 之未縮小的網版遮罩ScM,如圖15(c)所示,重曼於 件W上時,形成於工件W之配線焊墊的位置,與網版 罩ScM之開口的位置會無法對合。 在此種狀態下進行焊料印刷的話,焊料不會被印刷 形成於工件之焊料焊墊上,而成爲斷線或短路等之問題 原因。 雖然如此,藉由曝光裝置形成配線焊墊時,不使投 至工件之配線焊墊的位置配合伴隨工件的伸縮之配線圖 的縮小或擴大來變更倍率的話,形成於工件之配線圖案 位置與配線焊墊的位置會無法對合,故此也爲斷線或短 等之問題的原因。 又,考慮工件W的伸縮來設定網版遮罩ScM的大 之 網 配 形 4ητ 撕 〇 如 件 示 工 遮 至 的 影 案 的 路 小 -13- 201243523 ,也考慮以網版遮罩的開口位置及校準標記SAM的位置 對合預測之配線焊墊的位置及工件標記WAM的位置對合 之方式作成網版遮罩ScM,但是,因爲工件的伸縮量並不 —定,故即使可作成此種網版遮罩ScM,大多也難以進行 網版遮罩ScM的校準標記SAM與形成於工件W之工件標 記WAM的對位。 如上所述,在網版印刷中,因爲使遮罩密接工件而塗 佈焊料,故無法如投影曝光,因應工件的伸縮而使投影之 遮罩圖案像的倍率變化,因工件伸縮而大小與網版印刷所 使用之遮罩大幅不同的話,會發生無法進行網版印刷之狀 況。 再者,前述之問題係在前述之進行投影曝光之後進行 接觸式曝光、接近式曝光時也同樣會發生。 本發明係有鑒於前述情況所發明者,本發明的目的係 即使工件產生伸縮變形,形成於工件之圖案發生縮小放大 ,也可使藉由該投影曝光而形成於工件之圖案(例如配線 焊墊)的位置與,藉由之前的曝光處理而形成於工件之圖 案(例如配線圖案)的位置,以不會妨礙動作的程度來進 行對合,進而,即使在下個工程中,在進行如焊料的網版 印刷、接觸式曝光、接近式曝光之使大小一定的遮罩與工 件接觸或接近,將遮罩圖案轉印至工件上的作業時,也可 不讓形成於工件上之圖案與遮罩圖案之間產生較大之偏離 -14- 201243523 〔用以解決課題之手段〕 先前,於形成配線焊墊之圖案的曝光工程中,投影曝 光裝置係如圖1 〇所示,以藉由投影鏡頭投影之遮罩μ的 遮罩標記ΜΑΜ與形成於工件W之工件標記WAM的位置 之偏離量dR的總和成爲最小之方式,進行遮罩Μ與工件 W的對位。 相對於此,於本發明中,在前述投影曝光裝置之對位 時,以前述遮罩Μ (第1遮罩)的遮罩標記Μ AM與工件 標記WAM的偏離量dR之總和,更加上前述第1遮罩Μ 之遮罩標記MAM的位置與在下個工程中所使用之第2遮 罩(例如網版遮罩ScM)的遮罩標記(例如SAM)之基準 位置的偏離量dM的總和成爲最小之方式,調整放大或縮 小投影前述第1遮罩之圖案的倍率,並且使遮罩Μ或工件 W移動,進行遮罩與工件的對位。 前述第2遮罩的基準位置係例如形成於網版遮罩之遮 罩標記SAM (網版遮罩的校準標記)的位置,此遮罩之校 準標記的位置係工件變形前之工件標記的位置,或想定工 件W的伸縮所作成之第2遮罩之校準標記的位置。 亦即,於本發明中,如以下所述來解決前述課題。 (1)將第1遮罩的圖案,放大或縮小投影至與該遮罩大 小不同的工件上,並將形成於前述遮罩之校準標記的投影 像與形成於工件上的校準標記像加以對位,於工件上曝光 前述遮罩圖案之遮罩與工件的對位方法中,預先記憶在下 個工程中用以重疊對合於前述工件所使用之預先訂定之大 -15- 201243523 小的第2遮罩之校準標記的位置。 然後,在進行第1遮罩與工件的對位時,調整將前述 第1遮罩的圖案放大或縮小投影至前述工件上的倍率,以 第1偏離量與第2偏離量的總合成爲最小之方式,將前述 第1遮罩與前述工件加以對位;前述第1偏離量,係形成 於該第1遮罩之校準標記像的工件上之投影位置,與形成 於工件之校準標記的偏離量;前述第2偏離量,係與形成 於第1遮罩之校準標記的工件上之投影位置,與形成於前 述被記憶之第2工件的校準標記之位置的偏離量。 (2)前述(1)的下個工程之作業,係於前述工件重疊對 合前述第2遮罩,將焊钌注入至形成於該遮罩之開口而將 焊料載置於工件上的焊料印刷作業,或者將形成於前述第 2遮罩之圖案轉印至工件上的接觸式曝光或接近式曝光》 〔發明的效果〕 於本發明中,投影曝光裝置之第1遮罩與工件的對位 中,不僅考慮該遮罩與工件的關係,也考慮在之後工程中 ,與重疊或接近前述工件來使用之大小被預先訂定的第2 遮罩之位置關係。 放配線或形離 小如配觸於偏 縮例如接,的 案彳例罩時大 圖案{遮業較 之圖案的作生 件之圖定的產 工件之 一 上會 於工件小件不 成於工大工也 形成於中至間 而形成程印之 縮而形工轉案 伸光前個案圖 的曝之下圖罩 件影近在罩遮 工投接且遮與 因該,並將案 使由置,行圖 即藉位置進之 , 使的位而上 此可 } 的件件 爲也塾 } 工工 ,焊案近於 大線圖接成 -16- 201243523 所以,在下個工程中進行例如網版印刷時,可將焊 焊墊形成於配線圖案的所定位置,又,可將焊料不產生 大偏離地印刷至配線焊墊上。爲此,可不發生斷線或短 ,作成塗佈焊料的基板。 【實施方式】 以下針對本發明的實施例進行說明,但是,在以下 實施例中,以工件收縮而圖案縮小之狀況爲例進行說明 但是’即使工件擴張而圖案放大之狀況也同樣適用。 圖1、圖2係揭示關於本發明的投影曝光裝置之構 的圖。再者,於本實施例中,曝光裝置係1次曝光工件 基板)整體者,工件標記係形成4個,而對應其,遮罩 記也形成4個。 再者’於以下實施例中,雖然是1次曝光工件整體 ’但是’也適用於將工件分割成複數曝光區域,依序曝 該區域的曝光。 於圖1、圖2中,MS係遮罩台。於遮罩台MS,置 並保持有形成遮罩標記MAM與遮罩圖案MP的遮罩Μ 遮罩台MS係藉由遮罩台驅動機構3往ΧΥβ方向移動。 從光照射裝置1會射出曝光光線。射出之曝光光線 經由遮罩Μ、投影鏡頭2,被照射至載置於工件台WS 的塗佈光阻劑之工件W上,遮罩圖案ΜΡ被投影至工件 上並曝光。 料 較 路201243523 VI. Description of the Invention: [Technical Field] The present invention relates to a method of aligning a mask and a workpiece of a projection exposure apparatus for projecting and exposing a mask pattern on a workpiece, in particular, about scaling in a processing project The changed workpiece is the object, and the alignment is considered in consideration of the alignment of the next project, thereby, in the next project of the projection exposure processing, even if performing screen printing such as soldering, contact exposure In the proximity exposure, the mask of a certain size is in contact with or close to the workpiece, and when the mask pattern is transferred to the workpiece, no large deviation occurs, and the mask of the predetermined size and the workpiece can be aligned. The method of aligning the mask with the workpiece. [Prior Art] As an example of performing projection exposure, in the next process, a mask is attached to a workpiece to transfer the mask pattern to the workpiece, and screen printing is taken as an example. In the manufacture of a printed circuit board or the like, a process of transferring a mask pattern onto a workpiece is performed by a projection exposure apparatus, and a pattern of a wiring pad is formed on the workpiece, and then printing is performed on the formed wiring pad by screen printing. The job of printing solder. Fig. 9 is a view showing a view of the wiring pad of the aforementioned wiring pad and the printed (coated) solder. As shown in Fig. (a), a wiring pattern Pp composed of a conductor such as copper and a wiring -5 - 201243523 pad P d are formed on a substrate (workpiece) by projection exposure processing or the like, as shown in Fig. (b) It is shown that the solder S is printed (coated) by screen printing on the wiring pad pd. The screen printing system overlaps the mating mask and the workpiece on which the wiring pad is formed, applies solder to the mask, and applies a solder to the workpiece at a position corresponding to the opening portion of the mask. Further, in the process of forming the pattern of the wiring pad by the workpiece, since the printed circuit board (workpiece) expands and contracts, the magnification of the projected pattern image of the projection changes in accordance with the expansion and contraction of the workpiece during projection exposure. On the other hand, in the screen printing, since the solder is applied by adhering the mask to the workpiece, the projection exposure is not possible. Therefore, the magnification of the projected mask pattern is changed in accordance with the expansion and contraction of the workpiece, and the expansion and contraction of the workpiece is considered. A mask of a predetermined size is used. As described above, the pattern of the wiring pads is formed on a workpiece such as a printed circuit board, and the soldering of the formed wiring pads is as follows. (A) A pattern of a wiring pad is formed on a workpiece on which a wiring pattern is formed by a projection exposure apparatus. (B) Printing the solder on the wiring pads formed on the workpiece by the screen printing device. The foregoing processing will be specifically described. (A) Formation of Pattern of Wiring Pad of Workpiece Due to Projection Exposure First, the above-described (A) project will be described. Furthermore, the workpiece has formed a wiring pattern before this process. By the projection exposure apparatus, the mask forming the pattern of the wiring pad, -6 - 201243523 and the workpiece coated with the photoresist (the wiring pattern has been formed) are aligned (calibrated) in a predetermined position relationship, and then separated. This mask is used to illuminate the exposure light. Thereby, the pattern of the wiring pads is transferred (exposed) to the workpiece at a predetermined position of the workpiece. An example of an exposure apparatus including a projection lens used in the above-described exposure processing is described in Patent Document 1 (Japanese Laid-Open Patent Publication No. Hei 9-82615). The above-mentioned pair is described with reference to FIG. The action at the time of the bit. Further, in Fig. 10, since the pattern is too complicated, the wiring pattern formed on the workpiece is omitted. As shown in Fig. 10 (a), a pattern 形成 of a wiring pad formed on the workpiece W is formed on the mask Μ. The workpiece W is a resin substrate such as a printed circuit board. The projection lens (see FIG. 1 of Patent Document 1) is a lens that is formed on the workpiece W by a pattern 遮 formed on the mask ,. The projection lens has a zoom mechanism and can respond to the workpiece. The expansion and contraction causes the magnification of the projected pattern image to be changed during the exposure processing. To form the wiring pad Pd at a predetermined position of the workpiece W, the alignment of the mask and the workpiece W is performed before the exposure. For this reason, as shown in Fig. 10 (a), a mask and a calibration mark (hereinafter referred to as a mask mark ΜΑΜ) are formed on the mask, and a workpiece/calibration mark (hereinafter referred to as a workpiece mark WAM) is formed on the workpiece. Since the alignment of the mask and the workpiece is performed for both directions (X direction and Υ direction) and the rotation direction (0 direction) in the plane, the mask mark ΜΑΜ and the workpiece mark WAM are formed at two or more positions, respectively. In Fig. 10, 201243523, the mask mark MAM and the workpiece mark WAM system are respectively formed into four. The detection of the mask mark MAM and the workpiece mark WAM is performed by a calibration microscope (see Fig. 1 of Patent Document 1, etc.). The calibration microscope is set with the number of mask marks and workpiece marks formed. The order of the alignment of the mask Μ with the workpiece W is as follows. (a) A mask mark MAM projected by the projection lens is detected by a calibration microscope. Further, the workpiece mark WAM formed on the workpiece W is detected by a calibration microscope. (b) The mask mark MAM detected by the calibration microscope and the workpiece mark WAM are subjected to image processing in the control unit of the apparatus to obtain respective position coordinates. (c) The mask Μ or the workpiece W is moved in the ΧΥ 0 direction so that the sum of the deviations of the positions of the workpiece mark WAM and the mask mark MAM becomes minimum (ideally coincident). Further, when the workpiece W expands and contracts and changes in size, the magnification of the mask pattern image projected onto the workpiece W is changed by the zoom mechanism of the projection lens. (d) As shown in FIG. 10(b), the amount of deviation between the upper left mask mark MAM1 and the workpiece mark WAM1 is dR1, and the amount of deviation between the right upper mask mark MAM2 and the workpiece mark WAM2 is set to dR2, The amount of deviation between the mask mark MAM3 on the lower left side and the workpiece mark WAM3 is set to dR3, and the amount of deviation between the mask mark MAM4 on the lower right side and the workpiece mark WAM4 is set to dR4 (on the right side of the figure, the deviation amount of MAM4 and WAM4 is enlarged and revealed. In the case of dR4), the sum of the deviation amounts of the four mask marks MAM and the workpiece mark W AM is expressed by the following calculation formula (1). -8- '201243523 Then, as shown in FIG. 10(c), the magnification (by the projection lens) is projected to the magnification of the image of the work mask pattern by the projection amount dR, and the mask and the workpiece are made again. Move to 0. [1] 4 Σ (dR?).....(1) i = l * (e) After the alignment is completed, the pattern formed on the mask is exposed to the workpiece W via the mask Μ illumination line. W. The wiring is formed by the predetermined position of the wiring pattern formed on the workpiece W. Next, the screen printing process for (Β) is described using FIG. 12 and FIG. 13 . FIG. 11 is a description for use in screen printing. FIG. 12 is a view showing an example of a work performed by a printing apparatus, and FIG. 13 is a view showing the order of the printing apparatus, and the screen printing is performed on the screen printing. Techniques are described, for example, in paragraphs 2 to 0006 of Special 2, FIG. 9, and FIG. 6 of Patent Document 3. Hereinafter, a summary of the order of solder coating (screen printing) of 3:1 of solder coating will be described with reference to Figs. 11 to 13 described above. (a) The workpiece W is placed and held on the workpiece stage 14 shown in Fig. 12(a) by a transfer mechanism (not shown). Furthermore, the opposite exposure light is formed on the sum of the workpiece forming electricity, in the pad. 1 1. Under the figure, the flow chart of the net version is published in the literature 0005 ' The device is held in the road pattern -9 - 201243523 (b) The workpiece table drive mechanism (not shown) moves, (Z direction moves) to the screen mask The ScM and the work f are stopped (step S1 of Fig. 13). Furthermore, the screen mask used in screen printing shows the opening of the wiring pad shown in FIG. 9 described above. Although the same figure is not disclosed, the mask used is the same, and the screen mask is ScM. Also marked (the alignment mark of the screen mask or the second mask has a through hole. (c) On the screen mask ScM, insert the micromirror 16 of Fig. 12 (step S2 of _13). The workpiece mark WAM of the mask donating workpiece W is outputted, that is, the step S3) of detecting the workpiece mark in the through hole of the mask mark SAM. (d) The control unit of the solder coating apparatus (the mask mark SAM, which is not shown with the mask mark SAM and the position WAM of the workpiece mark WAM, is a through-hole. The workpiece stage drive mechanism 15 makes the workpiece stage 1 4 to X. The left-right direction), the Y-direction (for example, in the same figure), and the 0-direction (the alignment of the screen mask ScM and the workpiece W is performed on the axis perpendicular to the workpiece table surface (Fir S4). The position where the cover ScM and the workpiece table 14 of the workpiece W are raised to be close to each other is the position corresponding to the position of the ScM system as shown in Fig. 11, and the position of the SAM in the exposure device at 4 places, forming (a) The calibration of the display and the formation of the micro-mirror 16 are in the form of an I-WAM. (Fig. 13) According to the detected information, in the direction of the center of the workpiece mark, the direction (for example, the same figure on the paper surface is rotated in the center of the vertical direction) is moved, and the position is aligned. The cover table -10- 201243523 13 may be moved, and both the workpiece stage 14 and the mask stage 13 may be performed. (e) After the calibration is completed, the workpiece stage 1 is made to be screen-masked by the workpiece stage drive mechanism. The ScM is in contact with the workpiece W (step S5 (f) of FIG. 13], as shown in FIG. 12(b), in a state where the screen mask ScM and the slab are touched, a thin plate called a doctor blade 15 is used to make the solder ( While being rolled, the opening of the ScM is covered by the screen mask, and W is applied. In the workpiece W, solder is formed only in the portion where the opening of the screen mask ScM is formed, and a solder pad is formed (step S6 in Fig. 13). (g) When the application of the solder is completed, the workpiece stage drive mechanism operates as shown in Fig. 12(c), and the workpiece stage 14 is lowered (step S7 in Fig. 13). (h) Coating of solder by a transport mechanism (not shown) The workpiece W whose cloth (solder formation) is completed is carried out from the workpiece stage 14 to the coating device. As shown in Fig. 9, the solder S is applied to the wiring. In the pad P<1, if the position of the wiring pad Pd formed on the workpiece W does not coincide with the position of the screen mask opening, the solder S is not printed on the wiring pad Pd, which may cause problems such as disconnection or short circuit. In this case, after the projection exposure is performed, the operation of the mask to be closely attached or processed is not limited to the above-described screen printing. For example, after the projection exposure, the contact exposure is performed, and the proximity is the same. [PRIOR ART DOCUMENT] [Patent Document 1] [Patent Document 1] Japanese Patent Laid-Open No. 9 - 8 2 6 1 5, moved to 4 ascend) 0 PW solder paste) In the workpiece, the shape, as shown in the pad [ outer. In the case of the present invention, the present invention is disclosed in the Japanese Patent Application Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. The problem to be solved is that the screen printing (the metal mask) ScM forming the opening shown in Fig. 14 (a) is placed on the workpiece w shown in the same figure (b) as the figure. (c) shows that the screen mask ScM is moved in the ΧΥβ direction with respect to the workpiece W so as to be aligned with the position of the workpiece mark WAM formed on the workpiece and the second mask mark SAM. Then, As described above, the solder S is filled in the opening of the screen mask ScM by the doctor blade 15, and the solder S is printed on the wiring pads of the workpiece. As shown in Fig. 14, if the workpiece W is not stretched, the screen mask is When the size of the ScM is the same, the opening of the mask ScM and the wiring pad Pd on the workpiece W can be aligned without deviation. However, the printed circuit board used as the workpiece W is built up, and the lamination and heat are repeated. Hardened engineering. Because of the repetition of this project, printed Most of the brush circuit board is gradually contracted. When the substrate is shrunk, as shown in Fig. 15 (a), the position of the workpiece mark WAM formed thereon also changes. Specifically, the size of the wiring pattern formed on the substrate as a whole is The component of the shrinkage of the substrate is reduced. By using the projection exposure apparatus shown in the prior art, the magnification of the projection lens can be changed, and the size of the mask pattern can be changed for the wiring pattern and the workpiece mark whose position changes due to shrinkage of the substrate. The mask is aligned with the -12-201243523 piece. Thereby, the exposure device can be used to reduce the overall wiring pattern due to the shrinkage of the workpiece, and deviate from the position where the wiring pad is formed. However, the solder is printed to the wiring solder. The screen mask ScM of the screen printing machine of the pad basically has an opening formed at a position of a wire bonding pad formed on a substrate which does not have an expansion and contraction, that is, an opening is formed according to an unstretched pattern. Then, this screen The mask is directly placed on the workpiece to the user, such as projection exposure, and the deformation of the substrate is used to change the magnification of the opening pattern. As shown in Fig. 15 (a), in the case of the wiring pattern which is reduced by the shrinkage of the substrate (the workpiece W), the wiring pad Pd which is displaced from the position is formed in the work W, and the wiring pad Pd shown in Fig. 15 (b) is used. The unreduced screen mask ScM, as shown in Fig. 15(c), is placed at the position of the wiring pad of the workpiece W when it is placed on the member W, and the position of the opening of the screen cover ScM cannot be matched. When the solder is printed in this state, the solder is not printed on the solder pad of the workpiece, which causes a problem such as disconnection or short-circuit. However, when the wiring pad is formed by the exposure device, the solder is not made. When the position of the wiring pad to be placed on the workpiece is changed by the reduction or enlargement of the wiring pattern accompanying the expansion and contraction of the workpiece, the position of the wiring pattern formed on the workpiece and the position of the wiring pad may not be matched, and thus the disconnection or the disconnection may be performed. The reason for the short question. In addition, considering the expansion and contraction of the workpiece W, the large mesh configuration of the screen mask ScM is set. 4ητ is torn off as shown in Fig. 13-201243523, and the opening position of the screen mask is also considered. And the alignment mark SAM is positioned to match the predicted position of the wiring pad and the position of the workpiece mark WAM is formed as a screen mask ScM. However, since the amount of expansion and contraction of the workpiece is not fixed, even if such In the screen mask ScM, it is often difficult to perform alignment of the alignment mark SAM of the screen mask ScM with the workpiece mark WAM formed on the workpiece W. As described above, in the screen printing, since the solder is applied by adhering the mask to the workpiece, it is impossible to project the exposure, and the magnification of the projected mask pattern is changed in accordance with the expansion and contraction of the workpiece, and the size and the mesh are expanded by the workpiece. If the masks used in the printing are significantly different, it may not be possible to perform screen printing. Further, the above-mentioned problem also occurs in the case of contact exposure and proximity exposure after the projection exposure described above. The present invention has been made in view of the above circumstances, and an object of the present invention is to form a pattern of a workpiece (such as a wiring pad) by the projection exposure even if the workpiece is stretched and deformed, and the pattern formed on the workpiece is reduced and enlarged. The position of the pattern formed on the workpiece (for example, the wiring pattern) by the previous exposure processing is performed to the extent that the operation is not hindered, and further, in the next project, the solder is performed. Screen printing, contact exposure, proximity exposure enables a certain size of the mask to be in contact with or close to the workpiece, and when the mask pattern is transferred to the workpiece, the pattern and the mask pattern formed on the workpiece are not allowed. There is a big deviation between -14-201243523 [Means for Solving the Problem] Previously, in the exposure engineering for forming the pattern of wiring pads, the projection exposure apparatus is shown in Figure 1 to project by projection lens. The mask sum ΜΑΜ and the sum of the deviations dR of the position of the workpiece mark WAM formed on the workpiece W are minimized, and the mask is performed. The alignment of the workpiece W. On the other hand, in the present invention, when the projection exposure apparatus is aligned, the sum of the amount of deviation dR between the mask mark Μ AM of the mask Μ (first mask) and the workpiece mark WAM is further increased. The sum of the deviations dM of the position of the mask mark MAM of the first mask 与 and the reference mark of the mask mark (for example, SAM) of the second mask (for example, the screen mask ScM) used in the next project becomes In the smallest manner, the magnification of the pattern of the first mask is projected to be enlarged or reduced, and the mask Μ or the workpiece W is moved to align the mask with the workpiece. The reference position of the second mask is, for example, a position of a mask mark SAM (a calibration mark of the screen mask) formed on the screen mask, and the position of the calibration mark of the mask is the position of the workpiece mark before the workpiece is deformed. Or, the position of the calibration mark of the second mask made by the expansion and contraction of the workpiece W is determined. That is, in the present invention, the above problems are solved as described below. (1) projecting the pattern of the first mask onto the workpiece different in size from the mask, and projecting the projection image formed on the calibration mark of the mask with the calibration mark image formed on the workpiece In the method of aligning the mask and the workpiece on the workpiece, the second method is used to overlap the pre-defined large size of the -15-201243523 used in the next project. The position of the calibration mark for the mask. Then, when the alignment between the first mask and the workpiece is performed, the magnification of the pattern of the first mask is enlarged or reduced and projected onto the workpiece, and the total composition of the first deviation amount and the second deviation amount is minimized. The first mask is aligned with the workpiece; the first amount of deviation is a projection position formed on the workpiece of the calibration mask image of the first mask, and a deviation from a calibration mark formed on the workpiece The second deviation amount is a deviation amount from a projection position formed on the workpiece of the calibration mark of the first mask and a position of the calibration mark formed on the second workpiece to be memorized. (2) The operation of the next step of (1), in which the workpiece overlaps the second mask, and the solder fillet is injected into the solder formed on the opening of the mask to mount the solder on the workpiece. Work, or contact exposure or proximity exposure in which the pattern of the second mask is transferred onto the workpiece. [Effects of the Invention] In the present invention, the first mask of the projection exposure apparatus is aligned with the workpiece. In addition, not only the relationship between the mask and the workpiece but also the positional relationship of the second mask which is pre-defined in size to be used in the subsequent work or in the vicinity of the workpiece is considered. When the wiring is placed or the shape is small, such as the fitting of the cover, for example, the cover of the case, the large pattern {shadowing the work compared to the pattern of the production of the workpiece, one of the workpieces will not work on the workpiece. The big work was also formed in the middle to the middle and formed a contraction of the printing and the casework was transferred to the case before the light of the case. The cover piece was placed close to the cover and covered, and the case was set. The line map is borrowed from the position, so that the position of the position is 塾}], the welding case is close to the big line diagram and is connected to -16,435,435. Therefore, in the next project, for example, screen printing In this case, the solder pad can be formed at a predetermined position of the wiring pattern, and the solder can be printed on the wiring pad without causing large deviation. For this reason, the substrate to which the solder is applied can be formed without breaking or short. [Embodiment] Hereinafter, an embodiment of the present invention will be described. However, in the following embodiments, a case where the workpiece is shrunk and the pattern is reduced is described as an example. However, the case where the pattern is enlarged even if the workpiece is expanded is also applicable. Fig. 1 and Fig. 2 are views showing the construction of a projection exposure apparatus according to the present invention. Further, in the present embodiment, the exposure apparatus is one exposure of the entire workpiece substrate, and four workpiece marks are formed, and four masks are formed corresponding thereto. Further, in the following embodiments, although the entire workpiece is exposed once, 'but' is also suitable for dividing the workpiece into a plurality of exposure regions, and exposing the exposure of the region in sequence. In Fig. 1 and Fig. 2, the MS is a mask stage. At the mask stage MS, a mask constituting the mask mark MAM and the mask pattern MP is placed and held. The mask stage MS is moved in the ΧΥβ direction by the mask stage driving mechanism 3. The exposure light is emitted from the light irradiation device 1. The emitted exposure light is irradiated onto the workpiece W coated with the photoresist placed on the workpiece stage WS via the mask Μ and the projection lens 2, and the mask pattern 投影 is projected onto the workpiece and exposed. Material comparison

的 〇 造 ( 標 者 光 放 0 係 上 W -17- 201243523 投影鏡頭2係具備投影鏡頭變焦驅動機構2a。投影鏡 頭變焦驅動機構2a係變更投影至工件W上之遮罩圖案 MP的投影像之倍率。 於投影鏡頭2與工件W之間,在4處設置有可往同 圖之箭頭方向移動的校準顯微鏡10。在將遮罩圖案MP曝 光至工件W上之前’將校準顯微鏡1〇插入圖示的位置, 檢測出遮罩標記MAM與形成於工件W的工件標記WAM ,進行遮罩Μ與工件W的對位。對位後,校準顯微鏡1 0 係從工件W上退避。再者,於圖1、圖2中,揭示設置於 4處中的1個校準顯微鏡1〇。 校準顯微鏡1〇係由半鏡l〇a、複數鏡頭LI、L2等及 CCD相機10b所構成。藉由校準顯微鏡10的CCD相機 1 〇b受像之遮罩標記Μ AM像 '工件標記WAM像等係被送 至控制部1 1。 控制部1 1係具備處理利用前述CCD相機1 Ob受像之 畫像的畫像處理部11a、記憶遮罩標記MAM的位置座標 資訊等之各種參數的記憶部1 1 b、及以作爲工件標記所檢 測出之圖案的位置座標與記憶於記憶部Π b之遮罩標記像 的位置座標一致之方式使工件台WS或遮罩台MS (或者 雙方)移動,又藉由投影鏡頭變焦驅動機構來變更利用投 影鏡頭投影之遮罩圖案MP像之倍率的對位控制部1 1 d。The projection lens 2 is provided with a projection lens zoom drive mechanism 2a. The projection lens zoom drive mechanism 2a changes the projection image of the mask pattern MP projected onto the workpiece W. Between the projection lens 2 and the workpiece W, a calibration microscope 10 movable in the direction of the arrow in the same figure is provided at four places. Before the mask pattern MP is exposed onto the workpiece W, the calibration microscope 1 is inserted into the figure. At the position shown, the mask mark MAM and the workpiece mark WAM formed on the workpiece W are detected, and the mask Μ is aligned with the workpiece W. After the alignment, the calibration microscope 10 is retracted from the workpiece W. In Fig. 1 and Fig. 2, one calibration microscope 1 is provided in four places. The calibration microscope 1 is composed of a half mirror l〇a, a plurality of lenses LI, L2, and the like, and a CCD camera 10b. 10 CCD camera 1 〇b image mask mark Μ AM image 'work mark WAM image is sent to the control unit 1 1 . The control unit 1 1 includes an image processing unit that processes an image of the CCD camera 1 Ob image. 11a, memory mask mark MAM position seat The memory unit 1 1 b of various parameters such as information and the position coordinates of the pattern detected as the workpiece mark are aligned with the position coordinates of the mask mark image stored in the memory unit Π b such that the workpiece stage WS or the mask The station MS (or both) moves, and the alignment control unit 1 1 d of the magnification of the mask pattern MP image projected by the projection lens is changed by the projection lens zoom drive mechanism.

工件台WS或遮罩台MS係藉由利用前述對位控制部 lid所控制之工件台驅動機構4、遮罩台驅動機構3來驅 動,往XY方向(Χ,γ:平行於遮罩台MS、工件台WS -18 - 201243523 面且相互正交的方向)移動,並且以垂直 爲中心旋轉。 投影鏡頭2係藉由利用前述對位控制 投影鏡頭變焦驅動機構2a,驅動鏡筒內之 變更被投影之遮罩圖案MP像的倍率’放 件W上的遮罩圖案MP。 又,於工件台WS之表面的投影4 § 的位置,設置鏡片5。此鏡片5係反射投 的遮罩標記MAM »反射之遮罩標記MAM 10擷取》 於前述控制部1 1,連接監視器1 2, 理部1 1 a來畫像處理之畫像係顯示於監視ί 如前述般,因爲即使於網版印刷裝置 版遮罩ScM與工件W的對位,故於網版 在曝光裝置中使用之遮罩Μ相同,形成 SAM。在此,預先於曝光裝置之控制部11 輸入在焊料印刷用的網版印刷裝置中所用 屬遮罩)ScM的校準標記(第2遮罩標記 置資訊。 網版遮罩之校準標記SAM的位置係 之收縮的工件標記WAM之位置,或工件 變形之狀態的工件標記WAM之位置(亦 設計値的位置)等來設定。 此係,網版遮罩基本上考慮到想定之 於XY平面之軸 部1 1 d所控制之 —部分的透鏡, 大縮小投影至工 §遮罩標記MAM :影至工件台WS 像被校準顯微鏡 利用前述畫像處 器12的畫面。 中,也會進行網 遮罩ScM,也與 :4個校準標記 的登記部1 1 e, 之網版遮罩(金 )S Α Μ 1〜4的位 對應考慮到工件 未發生收縮等的 即,工件標記之 基板的伸縮量, -19- 201243523 或想定未發生變形之基板來作成,網版遮罩之第2遮罩 記SAM的位置也配合想定之伸縮量的工件之工件標記 位置,或基板未發生變形之工件標記的位置所作成,故 版遮罩ScM的第2遮罩標記SAM1〜4也對應該等來設 〇 藉此,控制部1 1係於記憶部1 1 b,記憶網版遮罩之 2遮罩標記SAM的位置資訊。 圖3、圖4係說明本實施例的曝光裝置之遮罩與工 的對位的圖,藉由同圖,針對本實施例之遮罩與工件的 位之槪要進行說明》再者,關於對位的順序係於後詳述 再者,在以下說明,針對在投影曝光處理的下個工程中 行網版印刷之狀況進行說明,但是,如前述般,也同樣 用於在下個工程中進行接觸式曝光、接近式曝光之狀況 圖3 ( a )係揭示工件W,如前述般作爲工件來使用 印刷電路基板係藉由工程的重複而伸縮,但是,在同圖 揭示已伸縮的工件W。於工件W,如同圖所示,設置有 件標記 WAM1〜WAM4。圖3 ( b )係揭示投影至工件 W S上的遮罩Μ,同圖雖爲縮小圖,但是揭示例如以1 率投影至工件台WS上之狀況》於遮罩Μ上,如同圖所 ,設置遮罩標記ΜΑΜ1〜ΜΑΜ4。 圖3(c)係揭示網版遮罩ScM,於網版遮罩ScM 置有第2遮罩標記SAMI〜SAM4,第2遮罩標記SAMI S A Μ 4的位置係如前述般,記憶於控制部n的記憶部i 標 的 網 定 第 件 對 〇 進 適 0 的 中 工 台 倍 示 設 lb -20- 201243523 圖4係將前述圖3(a)〜(c)所示之工件W與遮罩 Μ與網版遮罩ScM以中心一致之方式重疊對合’而並以個 別設置之校準標記最接近之方式配置的圖’重疊對合工件 W與遮罩Μ與網版遮罩S cM的話,則例如同圖(a )所示 〇 再者,於曝光裝置的控制部11,僅記億網版遮罩ScM 之校準標記SAMI〜SAM4的位置座標,並未記憶網版遮 罩ScM之開口部的圖案,及工件W上之配線焊墊(焊料 焊墊)Pd的位置,故如同圖所示,雖然並不是成爲重疊 對合工件W與遮罩Μ與網版遮罩ScM之狀態,但是,爲 了易於理解,同圖揭示重疊對合該等者。 重疊對合工件W與遮罩Μ與網版遮罩ScM的話,如 圖4 ( a )所示,個別設置之校準標記WAM1〜4、MAM1 〜4、SAM1〜4在偏離之狀態下重疊,例如放大揭示其右 下的校準標記WAM4、MAM4、SAM4的話,則如圖4 ( b )所示。 在此,將工件標記WAM4與遮罩標記MAM4的偏離 量設爲dR4,將遮罩標記MAM4與第2遮罩標記SAM4的 偏離量設爲dM4。 相同地,工件標記WAM1〜3與遮罩標記MAM1〜3 的偏離量分別設爲dRl〜dR3,將遮罩標記MAM1〜3與第 2遮罩標記SAM1〜3的偏離量分別設爲dMl〜3。 於本實施例中,以前述遮罩標記MAM與工件標記 WAM的偏離量dRl〜4的總和’更加上前述遮罩Μ之遮 -21 - 201243523 罩標記MAM的位置與在下個工程中使用之網版遮罩ScM 的第2遮罩標記SAMI〜4的偏離量dMl〜4的總和者成爲 最小之方式,調整放大或縮小投影前述遮罩Μ的圖案之倍 率,並且使遮罩Μ與工件W移動,進行遮罩與工件的對 位。 亦即,4個遮罩標記MAM 1〜4的位置座標,與對應 其之4個工件標記WAM1〜4的位置座標之偏離量dRl〜 dR4的總和係以以下所示之前述計算式(1 )表示。 又,4處之遮罩標記MAM1〜4與網版遮罩ScM的第 2遮罩標記SAM1〜4之偏離量的總和係以以下計算式(2 )表示。 再者,先前係以此偏離量dRl〜dR4的總和(計算式 (1 ))成爲最小之方式來進行對位。 在本實施例中,以計算式(1 )表示之遮罩標記MAM 與工件標記WAM之偏離量dRl〜4的總和,與計算式(2 )表示之遮罩標記MAM與第2遮罩標記SAM之偏離量 dMl〜4的總和之和成爲最小之方式,調整放大或縮小投 影前述遮罩Μ之圖案的倍率,並且使遮罩Μ或工件W移 動,進行遮罩與工件的對位。 遮罩標記ΜΑΜ與工件標記WAM之偏離量的總和, 與遮罩標記ΜΑΜ與網版遮罩之第2遮罩標記SAM之偏離 量的總和之和係以以下計算式(3 )表示。亦即,曝光裝 置以計算式(3 )之値成爲最小之方式進行遮罩與工件的 對位。 -22- 201243523 〔數2〕 Σ (dR?)……⑴ i = 1 Σ (dMi).....⑵ i == 1 4 Σ (dR'+α dM").....⑶ i = 1 藉此,藉由曝光處理而形成於工件W之配線焊墊的 位置係爲伴隨收縮之工件W而縮小之配線圖案,與網版 遮罩ScM的開口之中間位置。 爲此,藉由曝光而形成於工件W之焊料焊墊Pd係對 於應形成縮小之配線圖案Pp的焊料焊墊之所定位置,雖 然沒有完全一致,但是,形成於並不會偏離到造成斷線及 短路程度的位置》 又,此後,藉由網版印刷所形成之焊料的印刷也對於 藉由曝光所形成之焊料焊墊Pd的位置,雖然沒有完全一 致,但是,形成於並不會偏離到造成斷線及短路程度的位 置。 再者,計算式(3)的α係決定將權重放在遮罩標記 ΜΑΜ與工件標記WAM的對位,與網版遮罩之校準標記 SAM與遮罩標記ΜΑΜ的對位之任一的係數。 如果〇: > 1的話,則以遮罩標記MAM與第2遮罩標 -23- 201243523 記S A Μ的偏離量d M 1〜4之總和變小之方式進行對位。亦 即,以遮覃M與網版遮罩ScM的偏離較少之方式進行對 位。 如果a < 1的話’則以遮罩標記ΜΑΜ與工件標記 W A Μ的偏離量d R 1〜4之總和變小之方式進行對位。亦即 ,以遮罩Μ與工件W的偏離較少之方式進行對位。 如果a = 1的話’則以遮罩標記ΜΑΜ與第2遮罩標 記SAM的偏離量dM1〜4之總和’與遮罩標記MAM與工 件標記WAM的偏離量dRl〜4之總和成爲均等之方式進 行對位。 α之値係以將權重放在形成於工件W之配線圖案Pp 與焊料焊墊Pd的對位,或將權重放在印刷之焊料S與焊 料焊墊Pd的對位,因應其狀況來適切設定。 圖5係揭示對位順序的流程圖,圖6係對位的說明圖 ,以下,一邊參照前述圖1、圖2等,一邊針對具體的對 位順序來進行說明。 首先,如前述般,於曝光裝置之控制部11的登記部 1 1 e,設定在焊料印刷用的網版印刷裝置中所用之網版遮 罩(金屬遮罩)ScM的第2遮罩標記SAM1〜4的位置資 訊(圖5的步驟s丨)。 接著,搜尋遮罩標記MAM (圖5的步驟S2 )。亦即 ’在工件台WS沒有工件W之狀態(參照圖2 )下,對形 成4個遮罩標記mam之遮罩Μ,從光照射裝置1照射光 線。遮罩標記Μ AM係經由投影鏡頭2、校準顯微鏡1 0的 -24- 201243523 半鏡l〇a,投影至設置於工件台WS之表面的鏡片5上。 遮罩標記M A Μ係藉由鏡片5反射,經由半鏡1 〇 a、透鏡 LI、L2而射入至CCD相機10b。射入之遮罩標記MAM像 係藉由控制部1 1的畫像處理部1 1 a進行畫像處理,各遮 罩標記MAM 1〜4的位置座標被記億於記憶部1 1 b。成功 進行了遮罩標記MAM之位置的記憶後,則停止來自光照 射部1的光照射。再者,此時之投影鏡頭變焦驅動機構2a 所致之遮罩圖案MP的投影像之倍率係如前述般,倍率作 爲1亦可,又,設定配合工件之尺寸的倍率。 接下來,藉由未圖示的搬送系來搬送工件W,於工件 台WS上載置工件W (參照圖1 )。於工件W形成有配線 圖案,並塗佈光阻劑。而搜尋前述工件W的工件標記 WAM (圖5的步驟S3 )。 亦即’形成於工件W之工件標記WAM的像係經由校 準顯微鏡10的半鏡l〇a、透鏡LI、L2,而藉由CCD相機 1 Ob攝像。被攝像之工件標記W A Μ像係藉由控制部1 1的 畫像處理部1 1 a進行畫像處理,求出各工件標記w Α Μ 1〜 4的位置座標。 如果以圖揭示如前述所獲得之工件標記W Α Μ 1〜4、 遮罩標記ΜΑΜ1〜4、第2遮罩標記SAMI〜4的話,例如 爲圖6 (a)所示。再者’同圖係揭示工件標記WAMi〜4 配置於最外側,遮罩標記Μ Α Μ 1〜4配置於其內側,第2 遮罩標記SAM配置於最內側之狀況。 控制部11的運算部lie係求出前述工件標記WAM1 •25- 201243523 〜4、遮罩標記MAM1〜4的中心位置。據此,控制部11 的對位控制部22d係以一致於第2遮罩標記SAM1〜4的 中心位置之方式,又,以藉由工件標記WAM 1〜4、遮罩 標記MAM1〜4、第2遮罩標記SAM1〜4所分別形成之矩 形的各邊成爲平行之方式使工件台WS或遮罩台MS往XY 0方向移動(圖5的步驟S4)。 藉此,工件標記WAM1〜4、遮罩標記MAM1〜4、第 2遮罩標記SAM1〜4係如圖6(b)所示之配置。 控制部1 1的運算部1 1 c係運算工件標記W AMi ( i = 1 〜4 )與遮罩標記MAMi (i=l〜4)之位置座標的差,將 此設爲ai(i=l〜4)。又,運算遮罩標記MAMi(i=l〜 4)與第2遮罩標記SAMi (i=l〜4)之差,並將此設爲 bi(i=l〜4)(圖5的步驟S5)。 然後,藉由以下計算式(4 )求出工件標記WAMi、 遮罩標記MAMi、第2遮罩標記SAMi的偏離量之總和E ,並運算放大或縮小投影偏離量的總和E爲最小之遮罩M 的圖案之倍率(圖5的步驟S6 )。對位控制部1 Id係驅 動投影鏡頭變焦驅動機構2a,設定投影鏡頭2的倍率(圖 5的步驟S7 )。 〔數3〕 4 E = 2(ai2+abi ).....⑷ i = 1 如以上所述,進行遮罩Μ與工件W的對位時,如前 述般,對於工件W經由遮罩Μ,從光照射部1照射曝光 -26- 201243523 光線,將形成於遮罩Μ的圖案曝光至工件W上。藉此, 在形成於工件W之配線圖案的所定位置,形成配線焊墊 〇 接著,如以前述圖1 1〜1 3所說明般,進行工件W與 網版遮罩ScM的對位,使網版遮罩ScM與工件W接觸, 於工件W上的配線焊墊上塗佈焊料,形成焊料焊墊。 藉此,形成於工件之配線焊墊係不形成在對於形成配 線圖案的位置,大幅偏離的位置,且在下個工程中藉由網 版印刷塗佈之焊料的位置也對於配線焊墊的位置,雖然沒 有完全一致,但是,也不會大幅偏離。 接著,藉由圖7、圖8來說明對位順序之其他實施例 。圖7係揭示對位順序的流程圖,圖8係對位的說明圖。 在圖5、圖6中,已針對對合遮罩Μ與工件W的中 心位置之後,以偏離量的總和W成爲最小之方式設定投 影鏡頭的倍率之狀況的順序進行說明’但是,圖7、圖8 係揭示不進行如前述之對合中心位置的操作’進行對位之 狀況。 首先,如前述般’於曝光裝置之控制部11的登記部 1 1 e,設定在焊料印刷用的網版印刷裝置中所用之網版遮 罩(金屬遮罩)ScM的第2遮罩標記SAM1〜4的位置資 訊(圖7的步驟S1 )。 接著,搜尋遮罩標記MAM (圖7的步驟S2 )。然後 ,將遮罩標記MAM 1〜4的位置座標記憶於記憶部1 1 b。 接著,搜尋工件W的工件標記WAM (圖7的步驟S3 -27- ______ 201243523 如果以圖揭示如前述所獲得之工件標記wAM 1〜4、 遮罩標記MAM1〜4、第2遮罩標記SAMI〜4的話,例如 爲圖8(a)所示(與前述圖6(a)相同)。 控制部1 1的運算部1 1 c係運算工件標記WAMi ( i = 1 〜Ο與遮罩標記MAMi ( i = 1〜4 )之位置座標的差,將 此設爲ai(i=l〜4)。又,運算遮罩標記MAMi ( i = 1〜 4 )與第2遮罩標記S AMi (i=l〜4)之差,並將此設爲 bi(i=l〜4)(圖7的步驟S4)。 然後,藉由前述計算式(4 )求出工件標記WAMi、 遮罩標記MAMi、第2遮罩標記SAMi的偏離量之總和E ,並運算放大或縮小投影偏離量的總和E爲最小之遮罩Μ 的圖案之倍率,與運算遮罩台MS或工件台WS的ΧΥ0移 動量(圖7的步驟S5 )。 然後,據此,控制部1 1的對位控制部22d係以一致 於第2遮罩標記SAM1〜4的中心位置之方式,又,以工 件標記WAM 1〜4、遮罩標記ΜAM1〜4、第2遮罩標記 SAM1〜4分別最接近之方式,使工件台WS或遮罩台MS 往ΧΥ0方向移動,並且驅動投影鏡頭變焦驅動機構2a, 設定投影鏡頭2的倍率(圖7的步驟S6)。藉此’如圖8 (b)所示,進行遮罩Μ與工件W的對位。 【圖式簡單說明】 〔圖1〕揭示關於本發明的投影曝光裝置之構造的圖 -28 - 201243523 〔圖2〕揭示關於本發明的投影曝光裝置之構造的圖 〔圖3〕說明遮罩與工件之對位的圖(1)。 〔圖4〕說明遮罩與工件之對位的圖(2)。 〔圖5〕揭示本發明實施例之對位順序的流程圖。 〔圖6〕說明圖5的流程圖之對位的圖。 〔圖7〕揭示對位順序之其他實施例的流程圖。 〔圖8〕說明圖7的流程圖之對位的圖。 〔圖9〕形成於基板(工件)上之配線圖案與配線焊 墊的槪念圖。 〔圖10〕說明曝光裝置之遮罩與工件的對位動作的圖 〔圖1 1〕揭示網版印刷所使用之遮罩之一例的圖。 〔圖1 2〕說明網版印刷裝置所致之作業的圖❶ 〔圖1 3〕揭示網版印刷裝置所致之作業順序的流程圖 〔圖1 4〕說明網版印刷中工件未伸縮之狀況的圖。 〔圖1 5〕說明網版印刷中工件伸縮之狀況的圖。 【主要元件符號說明】 1 =光照射裝置 2 :投影鏡頭 2a:投影鏡頭變焦驅動機構 -29- 201243523 3 :遮罩台驅動機構 4 ·工件台驅動機構 5 :鏡片 1 〇 :校準顯微鏡 10a :半鏡 10b: CCD 相機 1 1 :控制部 1 1 a :畫像處理部 1 1 b :記憶部 1 lc :運算部 1 1 d :對位控制部 1 1 e :登記部 1 2 :監視器 1 3 :遮罩台(網版印刷用) 1 4 :工件台(網版印刷用) 1 5 :刮刀 1 6 :校準顯微鏡(網版印刷用) LI , L2 :透鏡 Μ :遮罩 MS :遮罩台 Μ AM :遮罩標記(遮罩的校準標記) P d :配線焊墊 P P :配線圖案 S :焊料 -30- 201243523The workpiece stage WS or the mask stage MS is driven by the workpiece stage drive mechanism 4 and the mask stage drive mechanism 3 controlled by the above-described alignment control unit lid, in the XY direction (Χ, γ: parallel to the mask stage MS) The workpiece table WS -18 - 201243523 faces and is orthogonal to each other) and rotates centering on the vertical. The projection lens 2 drives the projection lens zoom drive mechanism 2a by the above-described registration control to drive the mask pattern MP on the magnification of the projected mask pattern MP image in the lens barrel. Further, the lens 5 is placed at a position of the projection 4 § of the surface of the workpiece stage WS. The lens 5 is a reflective mask mark MAM » a reflective mask mark MAM 10 is extracted. The control unit 1 1 is connected to the monitor 1 2, and the image of the image processing is displayed on the monitor ί. As described above, since even if the screen printing apparatus masks the alignment of the ScM and the workpiece W, the mask used in the exposure apparatus is the same as the mask, and the SAM is formed. Here, the calibration mark (the second mask mark information) of the mask used in the screen printing apparatus for solder printing is input to the control unit 11 of the exposure apparatus in advance (the position of the calibration mark SAM of the screen mask). The position of the contracted workpiece mark WAM, or the position of the workpiece mark WAM in the state of the workpiece deformation (also designed as the position of the 値), etc. This system, the screen mask basically takes into consideration the axis of the XY plane. Part of the lens controlled by the 1 1 d, large reduction projection to the work mask mark MAM: shadow to the workpiece table WS. The image of the imager 12 is used by the calibration microscope. The mesh mask ScM is also performed. And the registration portion 1 1 e of the four calibration marks, the position of the screen mask (gold) S Α Μ 1 to 4 corresponds to the amount of expansion and contraction of the substrate of the workpiece mark, in consideration of the fact that the workpiece does not shrink or the like. -19- 201243523 Or create a substrate that has not been deformed. The position of the second mask in the screen mask is also the position of the workpiece mark of the workpiece with the desired amount of expansion or contraction, or the position of the workpiece mark where the substrate is not deformed. Made The second mask marks SAM1 to 4 of the master mask ScM are also arranged correspondingly, whereby the control unit 1 1 is attached to the memory unit 1 1 b, and the position of the mask mask SAM of the screen mask is 2 3 and FIG. 4 are diagrams illustrating the alignment of the mask and the workpiece of the exposure apparatus of the present embodiment, and the description of the position of the mask and the workpiece of the present embodiment is illustrated by the same figure. The order of the alignment is described in detail later. In the following description, the state of the screen printing in the next project of the projection exposure processing will be described. However, as described above, it is also used in the next project. The condition of contact exposure and proximity exposure is shown in Fig. 3 (a). The workpiece W is disclosed as a workpiece. The printed circuit board is used as a workpiece to expand and contract by repeating the engineering. However, the same workpiece is disclosed in the same figure. In the workpiece W, as shown in the figure, the pieces of the marks WAM1 to WAM4 are provided. Fig. 3(b) reveals the mask 投影 projected onto the workpiece WS, although the same figure is a reduced view, but the projection is, for example, projected at a rate of 1 to The condition on the workpiece table WS is on the mask, as shown The mask marks ΜΑΜ1 to ΜΑΜ4 are set. Fig. 3(c) reveals the screen mask ScM, and the screen mask ScM is provided with the second mask mark SAMI~SAM4, and the position of the second mask mark SAMI SA Μ 4 As described above, the netting piece stored in the memory unit i of the control unit n is set to lb-20-201243523 in the middle stage of the 适 适 0. FIG. 4 is the aforementioned FIG. 3(a) to (c). The workpiece W shown is overlapped with the mask Μ and the screen mask ScM in a manner consistent with the center, and is arranged in the closest manner to the individually set calibration marks. The overlapped workpiece W and the mask Μ In the case of the screen mask S cM, for example, as shown in the same figure (a), in the control unit 11 of the exposure apparatus, only the position coordinates of the calibration marks SAMI to SAM4 of the screen mask ScM are not memorized. The pattern of the opening of the screen mask ScM and the position of the wiring pad (solder pad) Pd on the workpiece W, so as shown in the figure, although not overlapping the workpiece W and the mask and the screen The state of the ScM is masked, but for ease of understanding, the same figure reveals overlapping pairs. When the workpiece W and the mask Μ and the screen mask ScM are overlapped, as shown in FIG. 4( a ), the individually set calibration marks WAM1 1-4, MAM1 1-4, and SAM 1-4 are overlapped, for example, When the magnification reveals the calibration marks WAM4, MAM4, and SAM4 at the lower right, it is as shown in Fig. 4(b). Here, the amount of deviation between the workpiece mark WAM4 and the mask mark MAM4 is dR4, and the amount of deviation between the mask mark MAM4 and the second mask mark SAM4 is dM4. Similarly, the deviation amounts of the workpiece marks WAM1 to 3 and the mask marks MAM1 to 3 are set to dR1 to dR3, respectively, and the deviation amounts of the mask marks MAM1 to 3 and the second mask marks SAM1 to 3 are set to dM1 to 3, respectively. . In the present embodiment, the sum of the deviations dR1~4 of the mask mark MAM and the workpiece mark WAM is further increased by the above-mentioned mask cover-21 - 201243523 The position of the cover mark MAM and the net used in the next project The sum of the deviation amounts dM1 to 4 of the second mask marks SAMI to 4 of the version mask ScM is minimized, and the magnification of the pattern of the mask Μ is enlarged or reduced, and the mask Μ and the workpiece W are moved. , the alignment of the mask and the workpiece. That is, the sum of the position coordinates of the four mask marks MAM 1 to 4 and the position coordinates dR1 to dR4 of the position coordinates of the four workpiece marks WAM1 to 4 corresponding thereto is the aforementioned calculation formula (1) shown below. Said. Further, the sum of the deviation amounts of the mask marks MAM1 to 4 of the four places and the second mask marks SAM1 to 4 of the screen mask ScM is expressed by the following calculation formula (2). Furthermore, the alignment is performed in such a manner that the sum of the deviation amounts dR1 to dR4 (the calculation formula (1)) is minimized. In the present embodiment, the sum of the deviation amounts dR1 to 4 of the mask mark MAM and the workpiece mark WAM represented by the calculation formula (1), and the mask mark MAM and the second mask mark SAM represented by the calculation formula (2). The sum of the sums of the deviation amounts dM1 to 4 is minimized, and the magnification of the pattern of the projection mask is enlarged or reduced, and the mask or the workpiece W is moved to align the mask with the workpiece. The sum of the deviation amount of the mask mark ΜΑΜ from the workpiece mark WAM and the sum of the deviation amounts of the mask mark ΜΑΜ and the second mask mark SAM of the screen mask are expressed by the following calculation formula (3). That is, the exposure device performs the alignment of the mask with the workpiece in such a manner that the enthalpy of the equation (3) is minimized. -22- 201243523 [Number 2] Σ (dR?)...(1) i = 1 Σ (dMi).....(2) i == 1 4 Σ (dR'+α dM").....(3) i = 1 Thereby, the position of the wiring pad formed on the workpiece W by the exposure processing is the position of the wiring pattern which is reduced by the shrinking workpiece W and the middle of the opening of the screen mask ScM. For this reason, the solder pad Pd formed on the workpiece W by exposure is not exactly the same as the position of the solder pad to which the reduced wiring pattern Pp should be formed, but is formed so as not to be broken to cause disconnection. And the position of the short circuit degree. Further, thereafter, the printing of the solder formed by the screen printing is not completely identical to the position of the solder pad Pd formed by the exposure, but is formed without deviating to cause The location of the disconnection and short circuit. Furthermore, the α of the equation (3) determines the coefficient of reproducing the alignment between the mask mark ΜΑΜ and the workpiece mark WAM, and the coefficient of any of the alignment marks SAM and the mask mark 网 of the screen mask. . If 〇: > 1, the alignment is performed such that the sum of the deviations d M 1 to 4 of the mask mark MAM and the second mask mark -23-201243523 S A 变 becomes smaller. That is, the alignment is performed in such a manner that the confinement M is less deviated from the screen mask ScM. If a < 1 ', the alignment is performed such that the sum of the offset marks d R 1 to 4 of the mask mark ΜΑΜ and the workpiece mark W A 变 becomes smaller. That is, the alignment is performed in such a manner that the deviation of the mask Μ from the workpiece W is small. If a = 1, then the sum of the deviation amount dM1 to 4 of the mask mark ΜΑΜ and the second mask mark SAM is equal to the sum of the deviation amounts dR1 to 4 of the mask mark MAM and the workpiece mark WAM. Counterpoint. The 値 is used to reproduce the alignment of the wiring pattern Pp formed on the workpiece W and the solder pad Pd, or to reproduce the alignment between the printed solder S and the solder pad Pd, and appropriately set according to the condition. . Fig. 5 is a flow chart showing the alignment order, and Fig. 6 is an explanatory diagram of the alignment. Hereinafter, the specific alignment order will be described with reference to Figs. 1 and 2 and the like. First, as described above, the second mask mark SAM1 of the screen mask (metal mask) ScM used in the screen printing apparatus for solder printing is set in the registration unit 1 1 e of the control unit 11 of the exposure apparatus. ~4 location information (step s丨 of Figure 5). Next, the mask mark MAM is searched (step S2 of Fig. 5). In other words, in the state in which the workpiece stage WS has no workpiece W (see Fig. 2), the mask Μ which forms the four mask marks mam is irradiated with light from the light irradiation device 1. The mask mark Μ AM is projected onto the lens 5 provided on the surface of the workpiece stage WS via the projection lens 2, the -24-201243523 half mirror l〇a of the calibration microscope 10. The mask mark M A is reflected by the lens 5, and is incident on the CCD camera 10b via the half mirror 1 、 a, the lenses LI, L2. The mask mark MAM image to be injected is subjected to image processing by the image processing unit 1 1 a of the control unit 1 1 , and the position coordinates of the mask marks MAM 1 to 4 are recorded in the memory unit 1 1 b. After the memory of the position of the mask mark MAM is successfully performed, the light irradiation from the light-emitting portion 1 is stopped. In addition, the magnification of the projection image of the mask pattern MP by the projection lens zoom drive mechanism 2a at this time is as described above, and the magnification may be set to 1, and the magnification of the size of the workpiece may be set. Next, the workpiece W is conveyed by a transport system (not shown), and the workpiece W is placed on the workpiece stage WS (see Fig. 1). A wiring pattern is formed on the workpiece W, and a photoresist is applied. On the other hand, the workpiece mark WAM of the aforementioned workpiece W is searched for (step S3 of Fig. 5). That is, the image formed by the workpiece mark WAM of the workpiece W is imaged by the CCD camera 1 Ob via the half mirror l〇a, the lenses L1, L2 of the calibration microscope 10. The image mark W A image to be imaged is subjected to image processing by the image processing unit 1 1 a of the control unit 1 1 , and position coordinates of the workpiece marks w Α Μ 1 to 4 are obtained. If the workpiece marks W Α Μ 1 to 4, the mask marks ΜΑΜ 1 to 4, and the second mask marks SAMI 〜 4 obtained as described above are disclosed in the figure, for example, it is shown in Fig. 6 (a). Further, the same figure shows that the workpiece marks WAMi to 4 are disposed on the outermost side, the mask marks Μ Α Μ 1 to 4 are disposed on the inner side, and the second mask mark SAM is disposed on the innermost side. The calculation unit lie of the control unit 11 obtains the center positions of the workpiece marks WAM1 • 25- 201243523 to 4 and the mask marks MAM1 to 4. Accordingly, the alignment control unit 22d of the control unit 11 is aligned with the center positions of the second mask marks SAM1 to 4, and by the workpiece marks WAM 1 to 4 and the mask marks MAM1 to 4, (2) The workpiece stage WS or the mask stage MS is moved in the XY0 direction so that the sides of the rectangle formed by the mask marks SAM1 to 4 are parallel (step S4 of FIG. 5). Thereby, the workpiece marks WAM1 to 4, the mask marks MAM1 to 4, and the second mask marks SAM1 to 4 are arranged as shown in Fig. 6(b). The calculation unit 1 1 c of the control unit 1 1 calculates the difference between the position coordinates of the workpiece mark W AMi ( i = 1 to 4 ) and the mask mark MAMi (i = 1 to 4), and sets this as ai (i = l ~4). Further, the difference between the mask mask MAMi (i = 1 to 4) and the second mask mark SAMi (i = 1 to 4) is calculated, and this is set to bi (i = 1 to 4) (step S5 of Fig. 5) ). Then, the sum E of the deviation amounts of the workpiece mark WAMi, the mask mark MAMi, and the second mask mark SAMi is obtained by the following calculation formula (4), and the mask of the enlargement or reduction projection total amount E is minimized. The magnification of the pattern of M (step S6 of Fig. 5). The registration control unit 1 Id drives the projection lens zoom drive mechanism 2a to set the magnification of the projection lens 2 (step S7 in Fig. 5). [Equation 3] 4 E = 2(ai2+abi ).....(4) i = 1 When the alignment between the mask and the workpiece W is performed as described above, the workpiece W is shielded by the mask as described above. The light illuminating unit 1 is irradiated with the light of the exposure -26-201243523, and the pattern formed on the mask 曝光 is exposed onto the workpiece W. Thereby, a wiring pad is formed at a predetermined position of the wiring pattern formed on the workpiece W. Then, as described in the above-mentioned FIGS. 11 to 13 , the alignment of the workpiece W and the screen mask ScM is performed. The mask mask ScM is in contact with the workpiece W, and solder is applied to the wiring pads on the workpiece W to form a solder pad. Thereby, the wiring pad formed on the workpiece is not formed at a position that is largely deviated from the position where the wiring pattern is formed, and the position of the solder applied by screen printing in the next process is also the position of the wiring pad. Although not exactly the same, it will not deviate significantly. Next, another embodiment of the alignment order will be described with reference to Figs. Fig. 7 is a flow chart showing the alignment order, and Fig. 8 is an explanatory diagram of the alignment. In the case of the center position of the mating mask Μ and the workpiece W, the order of setting the magnification of the projection lens so that the sum W of the amount of deviation is minimized is described in FIG. 5 and FIG. Fig. 8 is a view showing a state in which the operation of the position of the center of the conjugation as described above is not performed. First, as described above, the second mask mark SAM1 of the screen mask (metal mask) ScM used in the screen printing apparatus for solder printing is set in the registration unit 1 1 e of the control unit 11 of the exposure apparatus. Location information of ~4 (step S1 of Figure 7). Next, the mask mark MAM is searched (step S2 of Fig. 7). Then, the position coordinates of the mask marks MAM 1 to 4 are memorized in the memory unit 1 1 b. Next, the workpiece mark WAM of the workpiece W is searched (step S3 -27- ______ 201243523 of FIG. 7 . If the workpiece marks wAM 1 to 4 obtained as described above, the mask marks MAM1 to 4, and the second mask mark SAMI are displayed as shown in the figure 4 is, for example, as shown in Fig. 8(a) (the same as Fig. 6(a)). The calculation unit 1 1 c of the control unit 1 1 calculates the workpiece mark WAMi (i = 1 ~ Ο and the mask mark MAMi ( i = 1~4) The difference between the coordinates of the position, this is set to ai (i = l ~ 4). Also, the operation mask mark MAMi (i = 1 ~ 4) and the second mask mark S AMi (i = The difference between l and 4) is set to bi (i = 1 to 4) (step S4 of Fig. 7). Then, the workpiece mark WAMi, the mask mark MAMi, and the first are obtained by the above formula (4). (2) The sum of the deviation amounts of the mask marks SAMi, and the magnification of the pattern of the mask Μ which minimizes the sum E of the enlargement or reduction projection deviations, and the ΧΥ0 movement amount of the calculation mask table MS or the workpiece table WS (Fig. In step S5 of the seventh step, the alignment control unit 22d of the control unit 1 matches the center positions of the second mask marks SAM1 to 4, and the workpiece marks WAM 1 to 4, and Cover mark The AM1 to 4 and the second mask marks SAM1 to 4 are respectively closest to each other, and the workpiece stage WS or the mask stage MS is moved in the ΧΥ0 direction, and the projection lens zoom drive mechanism 2a is driven to set the magnification of the projection lens 2 (FIG. 7). Step S6). Thereby, the alignment of the mask Μ with the workpiece W is performed as shown in Fig. 8(b). [Schematic description of the drawing] Fig. 1 is a view showing the configuration of the projection exposure apparatus of the present invention. -28 - 201243523 [Fig. 2] A diagram (Fig. 3) showing the configuration of the projection exposure apparatus of the present invention is used to illustrate the alignment of the mask with the workpiece. (Fig. 4) illustrates the alignment of the mask with the workpiece. Fig. 5 is a flow chart showing the alignment sequence of the embodiment of the present invention. Fig. 6 is a view showing the alignment of the flowchart of Fig. 5. [Fig. 7] reveals another implementation of the alignment order. Fig. 8 is a view showing the alignment of the flow chart of Fig. 7. Fig. 9 is a view showing a wiring pattern and a wiring pad formed on a substrate (workpiece). A diagram of the alignment of the device and the workpiece (Fig. 11) reveals the mask used in screen printing Figure 1 2 illustrates the operation of the screen printing device [Fig. 13] shows the flow chart of the operation sequence caused by the screen printing device (Fig. 14) illustrates the workpiece in the screen printing Fig. 15 shows the state of the workpiece telescoping in screen printing. [Main component symbol description] 1 = Light irradiation device 2: Projection lens 2a: Projection lens zoom drive mechanism -29- 201243523 3: mask stage drive mechanism 4: workpiece stage drive mechanism 5: lens 1 〇: calibration microscope 10a: half mirror 10b: CCD camera 1 1 : control unit 1 1 a : image processing unit 1 1 b : memory unit 1 lc : Calculation unit 1 1 d : registration control unit 1 1 e : registration unit 1 2 : monitor 1 3 : mask table (for screen printing) 1 4 : workpiece table (for screen printing) 1 5 : blade 1 6 : Calibration microscope (for screen printing) LI , L2 : Lens Μ : Mask MS : Mask Μ AM : Mask mark (mask calibration mark ) P d : Wiring pad PP : Wiring pattern S : Solder - 30- 201243523

ScM :網版遮罩(金屬遮罩) SAM:第2遮罩標記(網版遮罩的校準標記) W :工件 W S :工件台 WAM :工件標記(工件的校準標記) -31 -ScM: screen mask (metal mask) SAM: 2nd mask mark (calibration mark of screen mask) W: workpiece W S : workpiece table WAM: workpiece mark (calibration mark of workpiece) -31 -

Claims (1)

201243523 七、申請專利範圍: 1. —種遮罩與工件的對位方法,係將第1 案,放大或縮小投影至與該遮罩大小不同的工件 形成於前述遮罩之校準標記的投影像與形成於工 準標記像加以對位,於工件上曝光前述遮罩圖案 工件的對位方法,其特徵爲: 預先記憶在下個工程中用以重疊對合於前述 用之預先訂定之大小的第2遮罩之校準標記的位j 在進行第1遮罩與工件的對位時,調整將前 罩的圖案放大或縮小投影至前述工件上的倍率, 離量與第2偏離量的總合成爲最小之方式,將前 罩與前述工件加以對位; 前述第1偏離量,係形成於該第1遮罩之校 的工件上之投影位置,與形成於工件之校準標記 * 前述第2偏離量,係與形成於第1遮罩之校 工件上之投影位置,與形成於前述被記憶之第2 準標記之位置的偏離量。 2. 如申請專利範圍第1項所記載之遮罩與 位方法,其中, 前述下個工程之作業,係於前述工件重疊對 2遮罩,將焊辽注入至形成於該遮罩之開口而將 於工件上的焊料印刷作業,或者將形成於前述第 圖案轉印至工件上的接觸式曝光或接近式曝光》 遮罩的圖 上,並將 件上的校 之遮罩與 工件所使 I ; 述第1遮 以第1偏 述第1遮 準標記像 的偏離量 準標記的 工件的校 工件的對 合前述第 焊料載置 2遮罩之 -32-201243523 VII. Patent application scope: 1. The method of aligning the mask with the workpiece, projecting the first case, zooming in or out, onto the projection image of the calibration mark formed on the mask by a workpiece different in size from the mask. And a method for aligning the workpiece of the mask pattern on the workpiece, which is formed by aligning the image with the work mark, and is characterized by: pre-memorizing in the next project for overlapping the pre-defined size of the foregoing (2) The position j of the calibration mark of the mask is adjusted to enlarge or reduce the magnification of the pattern of the front cover onto the workpiece when the first mask is aligned with the workpiece. The total composition of the deviation and the second deviation is In a minimum mode, the front cover and the workpiece are aligned; the first deviation amount is a projection position formed on the workpiece of the first mask, and the second offset amount of the calibration mark* formed on the workpiece And an amount of deviation from a projection position formed on the workpiece of the first mask and a position formed at the second predetermined mark to be memorized. 2. The mask and position method according to claim 1, wherein the operation of the next project is performed by overlapping the pair of workpieces with the mask, and injecting the beam into the opening formed in the mask. a solder printing operation on the workpiece, or a contact exposure or proximity exposure pattern formed on the workpiece onto the workpiece, and the mask and the workpiece on the workpiece The first piece of the first workpiece is misaligned with the first alignment mark image, and the alignment of the workpiece of the first alignment mark is aligned with the above-mentioned solder placement 2 mask-32-
TW101107484A 2011-04-14 2012-03-06 The method of aligning the mask with the workpiece TWI452447B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011089992A JP5533769B2 (en) 2011-04-14 2011-04-14 Mask and workpiece alignment method

Publications (2)

Publication Number Publication Date
TW201243523A true TW201243523A (en) 2012-11-01
TWI452447B TWI452447B (en) 2014-09-11

Family

ID=46992167

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101107484A TWI452447B (en) 2011-04-14 2012-03-06 The method of aligning the mask with the workpiece

Country Status (4)

Country Link
JP (1) JP5533769B2 (en)
KR (1) KR101445914B1 (en)
CN (1) CN102736445B (en)
TW (1) TWI452447B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI587081B (en) * 2012-11-15 2017-06-11 V科技股份有限公司 Manufacturing method for deposition mask
TWI587080B (en) * 2012-11-15 2017-06-11 V科技股份有限公司 Manufacturing method for deposition mask

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104730871B (en) * 2013-12-18 2017-07-21 财团法人金属工业研究发展中心 The different different sized substrate alignment method in space
CN105005182B (en) * 2014-04-25 2017-06-27 上海微电子装备有限公司 Alignment of relationships method in mutual alignment between multiple sensors
JP6561904B2 (en) * 2016-04-21 2019-08-21 三菱電機株式会社 Electronic component device and method of manufacturing electronic component device
JP7029587B2 (en) * 2017-10-19 2022-03-04 パナソニックIpマネジメント株式会社 Screen printing device and screen printing method
CN110147002B (en) * 2019-04-28 2022-04-26 武汉华星光电技术有限公司 Alignment test key, liquid crystal display panel and alignment assembly method

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH082085A (en) * 1994-06-20 1996-01-09 Fujitsu Ltd Paste coating method
TW588414B (en) * 2000-06-08 2004-05-21 Toshiba Corp Alignment method, overlap inspecting method and mask
JP4158514B2 (en) 2002-12-24 2008-10-01 ウシオ電機株式会社 Double-sided projection exposure system
JP4015079B2 (en) * 2003-07-18 2007-11-28 株式会社東芝 Reticle, exposure apparatus inspection system, exposure apparatus inspection method, and reticle manufacturing method
JP2005189462A (en) * 2003-12-25 2005-07-14 Nec Toppan Circuit Solutions Inc Method for manufacturing printed wiring board
US7785526B2 (en) * 2004-07-20 2010-08-31 Molecular Imprints, Inc. Imprint alignment method, system, and template
JP2006047881A (en) * 2004-08-06 2006-02-16 Sharp Corp Aligner and method for manufacturing layered substrate
KR101130890B1 (en) * 2005-03-18 2012-03-28 엘지전자 주식회사 Proximity type esposurer
CN101410945B (en) * 2006-08-31 2013-03-27 株式会社尼康 Mobile body drive method and mobile body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
KR101111934B1 (en) * 2007-04-03 2012-04-06 닛본 세이고 가부시끼가이샤 Exposure apparatus and exposure method
JP5133193B2 (en) * 2008-10-08 2013-01-30 株式会社目白プレシジョン Projection exposure equipment
US8271919B2 (en) * 2009-10-30 2012-09-18 Ibiden Co., Ltd. Method for correcting image rendering data, method for rendering image, method for manufacturing wiring board, and image rendering system
JP2011221267A (en) * 2010-04-09 2011-11-04 Fujikura Ltd Method and device for manufacturing print circuit board

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI587081B (en) * 2012-11-15 2017-06-11 V科技股份有限公司 Manufacturing method for deposition mask
TWI587080B (en) * 2012-11-15 2017-06-11 V科技股份有限公司 Manufacturing method for deposition mask
US9844835B2 (en) 2012-11-15 2017-12-19 V Technology Co., Ltd. Production method for deposition mask and deposition mask
US10208373B2 (en) 2012-11-15 2019-02-19 V Technology Co., Ltd. Production method for deposition mask

Also Published As

Publication number Publication date
TWI452447B (en) 2014-09-11
CN102736445B (en) 2015-01-28
CN102736445A (en) 2012-10-17
JP5533769B2 (en) 2014-06-25
KR101445914B1 (en) 2014-11-03
KR20120117680A (en) 2012-10-24
JP2012220923A (en) 2012-11-12

Similar Documents

Publication Publication Date Title
TW201243523A (en) Alignment method for mask and work-piece
TWI226130B (en) Manufacturing method and manufacturing apparatus of electronic device
CN203409425U (en) Repairing device
TW200821734A (en) Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
JP6465591B2 (en) Drawing device
JP2008221299A (en) Laser beam machining apparatus
TW201019055A (en) Exposure device
TW200811587A (en) Method and tool for patterning thin films on moving substrates
TWI822986B (en) Laser processing device and method, wafer transfer device and method
TW200811604A (en) Projection exposure device and projection exposure method
CN102463413A (en) Laser processing device
TW200534037A (en) Acceptable defects positioning and manufacturing method for large-scaled photomask blanks
JP2006267191A (en) Exposure device
TW201202690A (en) Defect repair apparatus and defect tracking method
JP4348474B2 (en) Substrate direction detection method and drawing system
JP2004165670A (en) Device manufacturing method and device manufactured thereby
JP2001235877A (en) Exposure method
TW201516578A (en) Drawing apparatus, substrate processing system and drawing method
JP2759890B2 (en) Exposure equipment
JP5326928B2 (en) Illumination optical system, exposure apparatus, and device manufacturing method
JPH06252023A (en) Both-sided pattern formation method
JP2009003159A (en) Laser exposure method and laser exposure apparatus
JP5141904B2 (en) Method for producing double-sided photomask substrate
JPH09230610A (en) Projective exposure method and device
JP2010245105A (en) Aligner and exposure method