TW201238968A - Metal complex dye composition, photoelectric transducing element and photoelectrochemical cell, and method for preparing metal complex dye - Google Patents

Metal complex dye composition, photoelectric transducing element and photoelectrochemical cell, and method for preparing metal complex dye Download PDF

Info

Publication number
TW201238968A
TW201238968A TW101105829A TW101105829A TW201238968A TW 201238968 A TW201238968 A TW 201238968A TW 101105829 A TW101105829 A TW 101105829A TW 101105829 A TW101105829 A TW 101105829A TW 201238968 A TW201238968 A TW 201238968A
Authority
TW
Taiwan
Prior art keywords
formula
group
metal complex
complex dye
represented
Prior art date
Application number
TW101105829A
Other languages
Chinese (zh)
Other versions
TWI564301B (en
Inventor
Yukio Tani
Tatsuya Susuki
Katsumi Kobayashi
Keizo Kimura
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of TW201238968A publication Critical patent/TW201238968A/en
Application granted granted Critical
Publication of TWI564301B publication Critical patent/TWI564301B/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System
    • C07F15/0006Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System compounds of the platinum group
    • C07F15/0046Ruthenium compounds
    • C07F15/0053Ruthenium compounds without a metal-carbon linkage
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09BORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B23/00Methine or polymethine dyes, e.g. cyanine dyes
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09BORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B23/00Methine or polymethine dyes, e.g. cyanine dyes
    • C09B23/10The polymethine chain containing an even number of >CH- groups
    • C09B23/105The polymethine chain containing an even number of >CH- groups two >CH- groups
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09BORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B57/00Other synthetic dyes of known constitution
    • C09B57/10Metal complexes of organic compounds not being dyes in uncomplexed form
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20Light-sensitive devices
    • H01G9/2059Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M14/00Electrochemical current or voltage generators not provided for in groups H01M6/00 - H01M12/00; Manufacture thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/341Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/344Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising ruthenium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20Light-sensitive devices
    • H01G9/2027Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/542Dye sensitized solar cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Abstract

This invention provides a metal complex dye composition with a high solubility to a solvent, and a photoelectric transducing element and a photoelectrochemical cell with a high photoelectric transducing efficiency. The metal complex dye composition contains, in a proportion of 0.5-5% by area in a 254 nm detection of HPLC, a metal complex dye of formula (1) and another metal complex dye with a specific structure. The formula (1) is expressed by: M1 (LL1)m1 (LL2)m2 (Z1)2 * (CI1)m3 (1), wherein M1 is a metal atom, LL1 is a bidentate ligand, LL2 is a bidentate ligand, Z1 is at least one ligand selected from isothiocyanato group, isocyanato group and isoselenocyanato group, CI1 represents a counter ion if a conter ion is required to neutralize charges, m1 and m2 are both equal to one, and m3 is an ineger equal to or larger than zero.

Description

201238968f τ i -τνυριΐ 六、發明說明: 【發明所屬之技術領域】 本發明是關於對溶劑的溶解性高的金屬錯合物色素級 成物,及光電轉換效率高的光電轉換元件及光電化學油^ 【先前技術】 光電轉換元件可用於各種光感測器、影印機、光電 學電池(例如太陽電池)等。光電轉換元件中,使用金 的光電轉換元件、使用半導體的光電轉換元件、使用有機 顏料或色素的光電轉換元件,或將該些加以組合成的光 轉換元件等各種方式已實聽。其巾,彻林枯竭的J 陽能的太陽電池不需要燃料而利用無盡的清潔能量,其 式的實用化大受期待。其中,矽系太陽電池自以前開始j 直在進行研開,亦有各國政策的注重,而得到了普及。日 石夕為無機材料,產量及分子修飾自然有極限。 〜 因此,色素增感型太陽電池的研究正被全力進行。 別疋,士的洛桑工科大學的Graetzel等人開發出在多 氧化鈦薄膜的表面固定包釕錯合物的色素而成的色素二= 型太陽電池,其實現非晶矽水準的轉換效率。藉此,^ = 增感型太陽電池一躍而受到全世界研究者的關注。 ’、 專利文獻1中記載,應用此技術,使用以釕錯合物 素增感的半導體微粒的色素增感光電轉換元件。另外有 告用廉價的有機色素作為增感劑的光電轉換元件,但都艮 能說是轉換效率高的光電轉換元件。 不 因此提出了使特定結構的光增感色素吸附半導體微板 4 201238968 41468pif 光電轉換效率的技術(例如參 但專利文獻2、3記载的光增减 ^獻2、3)。 溶解性低,故在-定條=對溶劑的 足,在光電轉換效率方面說粒的吸附量不 大或玄主〇不上充刀,因此色素的使用量 解心要長時間’依生產性的觀 [先則技術文獻] 「心 [專利文獻] [專利文獻1]美國專利第5463057號說明書 [專利文獻2]曰本專利第45%4^號公報曰 [專利文獻3]曰本專利特開2〇〇1_291534號公報 【發明内容】 本發明的課題在提供對溶劑的溶解性高的金屬錯合物 色素組成物,以及光電轉換效率高的光電轉換元件及光電 化學電池。另外,本發明的課題在於提供對溶劑的溶解性 尚的金屬錯合物色素的製造方法。 本發明者等人反複深入研究後發現,含特定配位基的 金屬錯合物色素在溶劑中的溶解性高,而可提高此色素在 半導體微粒上的吸附量,故可提供轉換效率高的光電轉換 元件及光電化學電池。本發明是基於此見解而完成。 根據本發明,提供以下的發明。 &lt;1&gt;一種金屬錯合物色素組成物,包括:下述通式(1) 所示的金屬錯合物色素,以及下述通式(5)所示的金屬錯合 物色素及/或下述通式(6)所示的金屬錯合物色素; 按HPLC(高效液相層析法)的254 nm檢測的面積計’ 201238968 通式(5)所承的金屬錯合物色素及通式(6)所示的金屬錯合 物色素的含有率合計為0.5〜5%。 口 M1(LL1)mi(LL2)m2(21)2 . (CI1)^ 通式⑴ [通式(1)中,Μ12表示金屬原子,LL1為下述通式(2)所示的 2牙配位基,认為下述通式(3)所示的2牙配位基;mi表 示1,m2表杀1 ’ Zl表示配位基’為選自異硫氰基、異氰 酸基及異硒氰基的至少1種;CI1表示需要對離子來中和電 荷時的對離子’ m3為〇以上的整數。] R'» R.iB*' B*1 ’通式(2) [通式(2)中,;R1URl4及R21〜R24獨立表示酸性基或其鹽或氫 原子,RU〜R14及R21〜r24可相同亦可不同,但R11〜R14及 R21〜R24中的炱少一個為酸性基或其鹽。][Technical Field] [Technical Field] The present invention relates to a metal complex pigment level product having high solubility in a solvent, and a photoelectric conversion element and a photoelectrochemical oil having high photoelectric conversion efficiency. ^ [Prior Art] The photoelectric conversion element can be used for various photo sensors, photocopiers, photoelectric cells (such as solar cells), and the like. In the photoelectric conversion element, various methods such as a photoelectric conversion element using gold, a photoelectric conversion element using a semiconductor, a photoelectric conversion element using an organic pigment or a dye, or a combination of these optical conversion elements have been realized. The towel, the solar battery of J Yangneng, which is exhausted by the forest, uses endless clean energy without fuel, and its practical use is expected. Among them, the solar cells of the lanthanum series have been researched and developed since the beginning, and they have also been popularized by the policies of various countries. Day Shixi is an inorganic material, and the yield and molecular modification naturally have limits. ~ Therefore, research on dye-sensitized solar cells is being carried out with all efforts. In addition, Graetzel et al. of the University of Lausanne University of Technology developed a pigmented two-type solar cell in which a pigment of a ruthenium complex is fixed on the surface of a titanium oxide film, which realizes an amorphous ruthenium conversion efficiency. In this way, ^ = sensitized solar cells have attracted the attention of researchers all over the world. In Patent Document 1, a dye-sensitized photoelectric conversion element using semiconductor fine particles sensitized with ruthenium complex is used. In addition, there is a photoelectric conversion element which uses an inexpensive organic dye as a sensitizer, but it can be said that it is a photoelectric conversion element having high conversion efficiency. A technique for adsorbing the photoelectric conversion efficiency of the semiconductor microplate 4 201238968 41468pif by the photo-sensitizing dye of a specific structure has been proposed (for example, the light increase/decrease 2 and 3 described in Patent Documents 2 and 3). The solubility is low, so in the - fixed strip = solvent to the foot, in terms of photoelectric conversion efficiency, the amount of adsorption of the particles is not large or the main mold is not filled with a knife, so the amount of pigment used to resolve the heart for a long time 'depending on productivity [Patent Document] [Patent Document 1] U.S. Patent No. 5,463,057 [Patent Document 2] 曰 Patent No. 45% 4 No. 曰 [Patent Document 3] SUMMARY OF THE INVENTION PROBLEMS TO BE SOLVED BY THE INVENTION The present invention provides a metal complex dye composition having high solubility in a solvent, and a photoelectric conversion element and a photoelectrochemical cell having high photoelectric conversion efficiency. The inventors of the present invention have intensively studied and found that a metal complex dye containing a specific ligand has high solubility in a solvent. Further, since the amount of adsorption of the dye on the semiconductor fine particles can be increased, a photoelectric conversion element and a photoelectrochemical cell having high conversion efficiency can be provided. The present invention has been completed based on this finding. According to the present invention, the following is provided. <1> A metal complex dye composition comprising a metal complex dye represented by the following formula (1) and a metal complex dye represented by the following formula (5) And/or a metal complex dye represented by the following formula (6); a metal complex according to the area of 254 nm detected by HPLC (High Performance Liquid Chromatography) 201238968 The content ratio of the dye and the metal complex dye represented by the formula (6) is 0.5 to 5% in total. M1(LL1)mi(LL2)m2(21)2 . (CI1)^ Formula (1) [Formula In (1), Μ12 represents a metal atom, and LL1 is a bidentate ligand represented by the following formula (2), and is considered to be a bidentate ligand represented by the following formula (3); mi represents 1, M2 represents 1 'Zl indicates that the ligand 'is at least one selected from the group consisting of isothiocyanato, isocyanate and isocyanato; CI1 indicates that the counter ion 'm3' is required to neutralize the charge to the ion. The above integer.] R'» R.iB*' B*1 'General formula (2) [In the formula (2), R1URl4 and R21 to R24 independently represent an acidic group or a salt or a hydrogen atom thereof, RU to R14 And R21~r24 may be the same or different, but one of R11~R14 and R21~R24 is one less Or a salt thereof of the group.]

[通式(3)中,n1、n2獨立表示〇〜3的整數,Y1、Y2獨立表 示氫原子或下述通式(4)所示的雜芳基,但Ar1及Ar2獨立 表不下述通式(4)所示的雜芳基。 6 201238968 41468pif[In the general formula (3), n1 and n2 independently represent an integer of 〇~3, and Y1 and Y2 independently represent a hydrogen atom or a heteroaryl group represented by the following formula (4), but Ar1 and Ar2 independently represent the following a heteroaryl group represented by the formula (4). 6 201238968 41468pif

[通式(4)中,汉31 通式(4) 久〜R33從 基,R31〜R33中 獨立表示氫原子、烷基、烷氧基或炔 原子、氧原子、、至少1個為烧基、烷氧基或炔基。X為硫 或雜環基。]瑪原子或NR4 ’ R4為氫原子、烷基、芳基 M (LL1‘(〜1)(CN) · (c〜 含▲與通式(二ϋ LL]2、Z1、Cl1、ml、m2 及 m3 的 m1(ll1Wu^2(cn): (Cl1) m3 通式(6) [通式(6)中 ’ μ1、ll1、LL2、Z1、Cl1、m卜 m2 及 m3 的含義與通式(1)中的相同。] &lt;2&gt;如&lt;1&gt;所述之金屬錯合物色素組成物,其中通式〇) 中的LL2由下述通式(7)表示。[In the formula (4), the compound of the formula (4) is a compound of the formula (4), and the radicals R3 to R33 independently represent a hydrogen atom, an alkyl group, an alkoxy group or an alkyne atom, an oxygen atom, or at least one of which is an alkyl group. , alkoxy or alkynyl. X is a sulfur or a heterocyclic group. ]Ma atom or NR4 ' R4 is a hydrogen atom, an alkyl group, an aryl group M (LL1'(~1)(CN) · (c~ contains ▲ and formula (divalent LL) 2, Z1, Cl1, ml, m2 And m3 of m1(ll1Wu^2(cn): (Cl1) m3 General formula (6) [The meaning and general formula of 'μ1, ll1, LL2, Z1, Cl1, mb, m2 and m3 in the general formula (6) [2] The metal complex dye composition according to <1>, wherein LL2 in the formula 〇) is represented by the following formula (7).

通式⑺ [通式(7)中,R41〜R43及 R51〜R53獨立表示氫原子、烷基、 201238968 -Ti-rv/opif 烧氧基51 或、Ί:Κ41〜R43中的至少丨個為絲、烧氧基或块 基2。R51〜R53中的至少1個為烷基、烷氧基或炔基。X1及 X各自獨立為硫原子、氧原子、硒原子或NR7,R7為氫原 子、烧基、芳基或雜環基。] &lt;3&gt;如&lt;2&gt;所述之金屬錯合物色素組成物,其中通式(7) 中的X1及X2為硫原子。 &lt;4&gt;如&lt;1&gt;〜&lt;3&gt;中任一項所述之金屬錯合物色素組成 物,其中通式(1)所示金屬錯合物色素由下述通式(8)表示。 rmIn the formula (7), R41 to R43 and R51 to R53 independently represent at least one of a hydrogen atom, an alkyl group, 201238968-Ti-rv/opif alkoxy group 51 or Ί: Κ41 to R43. Silk, alkoxy or block 2 . At least one of R51 to R53 is an alkyl group, an alkoxy group or an alkynyl group. X1 and X are each independently a sulfur atom, an oxygen atom, a selenium atom or NR7, and R7 is a hydrogen atom, an alkyl group, an aryl group or a heterocyclic group. [3] The metal complex dye composition according to <2>, wherein X1 and X2 in the formula (7) are a sulfur atom. The metal complex dye composition according to any one of <1>, wherein the metal complex dye represented by the formula (1) is represented by the following formula (8) Said. Rm

[通式⑻中,R61、R62獨立表示烷基、烷氧基或炔基,Αι、 A2獨立表示羧基或其鹽。] &lt;5&gt;如&lt;1&gt;〜&lt;4&gt;中任一項所述之金屬錯合物色素組成 物,其中通式(5)所示的金屬錯合物色素由下述通式(9)表 示,通式(6)所示的金屬錯合物色素由下述通式(10)表示。 8 201238968 41468pifIn the formula (8), R61 and R62 each independently represent an alkyl group, an alkoxy group or an alkynyl group, and Αι and A2 independently represent a carboxyl group or a salt thereof. [5] The metal complex dye composition according to any one of the above-mentioned (5), wherein the metal complex dye represented by the formula (5) is represented by the following formula ( 9) It is shown that the metal complex dye represented by the formula (6) is represented by the following formula (10). 8 201238968 41468pif

[通式(9)中,R7!及R72獨立表示烷基、烷氧基或炔基,a5、 A獨立表不缓基或其鹽。 通式(10)中’ R73及R74獨立表示烷基、烷氧基或炔基,A7、 A8獨立為羧基或其鹽。] &lt;6&gt;如&lt;1&gt;〜&lt;5&gt;中任一項所述之金屬錯合物色素組成 物’其中通式(5)所示的金屬錯合物色素由下述通式(u)表 示’通式(6)所示的金屬錯合物色素由下述通式(12)表示。[In the formula (9), R7! and R72 independently represent an alkyl group, an alkoxy group or an alkynyl group, and a5 and A independently represent a group or a salt thereof. In the formula (10), R73 and R74 each independently represent an alkyl group, an alkoxy group or an alkynyl group, and A7 and A8 each independently represent a carboxyl group or a salt thereof. The metal complex dye composition according to any one of the above-mentioned items (5), wherein the metal complex dye represented by the formula (5) is represented by the following formula ( u) indicates that the metal complex dye represented by the formula (6) is represented by the following formula (12).

[通式(11)及(12)中,R81〜R84獨立表示炔基。A13〜A16獨立 表示致基或其鹽。] &lt;7&gt;—種下述通式(1)的金屬錯合物色素的製造方法, 包括:藉由外部加熱使包含下述通式(13)的金屬錯合物色 素與下述通式(14)的化合物的混合液的溫度上升。 201238968 β-Ι^Οδρίί M1(LL1)ml(LL2)m2(Z2)m4 · (CI1)^ 通式(13) [通式(13)中,Μ1、LL1、LL2、Cl1、ml及m2的含義與通 式(1)中的相同,Z2為1牙或2牙配位基,m4表示1〜2的 整數,Z2為1牙配位基時m4表示2,Z2為2牙配位基時 m4表示1,m5為0以上的整數。]In the general formulae (11) and (12), R81 to R84 each independently represent an alkynyl group. A13 to A16 independently represent a radical or a salt thereof. &lt;7&gt; A method for producing a metal complex dye of the following formula (1), comprising: a metal complex dye comprising the following formula (13) and a general formula by external heating The temperature of the mixed solution of the compound of (14) increases. 201238968 β-Ι^Οδρίί M1(LL1)ml(LL2)m2(Z2)m4 · (CI1)^ General formula (13) [In the formula (13), the meanings of Μ1, LL1, LL2, Cl1, ml and m2 Same as in the general formula (1), Z2 is a 1- or 2-dentate ligand, m4 represents an integer of 1 to 2, when Z2 is a dental ligand, m4 represents 2, and Z2 is a 2-dentate ligand, m4 Indicates that 1, m5 is an integer of 0 or more. ]

MnQCN 通式(14) [通式(14)中,M11表示無機或有機的銨離子、質子或鹼金 屬離子,Q表示硫原子、氧原子或碰原子。] M'CLL'^KLL^CZ1^ - (CI1)^ 通式(1) [通式(1)中,Μ1表示金屬原子,LL1為下述通式(2)所示的 2牙配位基,LL2為下述通式(3)所示的2牙配位基;ml表 示1,m2表示1,m3為0以上的整數;Z1表示配位基, 為選自異硫氰基、異氰酸基及異硒氰基的至少1種;CI1 表示需要對離子來中和電荷時的對離子。]MnQCN Formula (14) [In the formula (14), M11 represents an inorganic or organic ammonium ion, a proton or an alkali metal ion, and Q represents a sulfur atom, an oxygen atom or a collision atom. M'CLL'^KLL^CZ1^ - (CI1)^ Formula (1) [In the formula (1), Μ1 represents a metal atom, and LL1 is a 2-dentate ligand represented by the following formula (2)] LL2 is a bidentate ligand represented by the following formula (3); ml represents 1, m2 represents 1, m3 is an integer of 0 or more; and Z1 represents a ligand selected from isothiocyanato and isocyanide. At least one of an acid group and an isoselenocyano group; CI1 represents a counter ion when a charge is required to neutralize a charge. ]

[通式(2)中,R11〜R14及R21〜R24獨立表示酸性基或其鹽或氫 原子,R11〜R14及R21〜R24可相同亦可不同,但R11〜R14及 201238968 41468pif R21〜R24的至少一個為酸性基或其鹽。][In the formula (2), R11 to R14 and R21 to R24 independently represent an acidic group or a salt thereof or a hydrogen atom, and R11 to R14 and R21 to R24 may be the same or different, but R11 to R14 and 201238968 41468pif R21 to R24 At least one is an acidic group or a salt thereof. ]

通式(3) [通式(3)中,nl、n2獨立表示〇〜3的整數,γΐ、γ2獨立表 示氫原子或下述通式(4)所示的雜芳基,但Ar1及Ar2獨立 表示下述通式(4)所示的雜芳基。] R33 R32 通式(4) [通式(4)中,R31〜R33獨立表示氫原子、烷基、烷氧基或炔 基’ R31〜R33中的至少1個為烷基、烷氧基或炔基;χ為硫 原子、氧原子、硒原子或NR4,R4為氫原子、烷基、芳基 或雜壤基。] &lt;8&gt;如&lt;7&gt;所述之金屬錯合物色素的製造方法,其中通 式(1)中的LL2由下述通式(7)表示。In the general formula (3), n1 and n2 independently represent an integer of 〇~3, and γΐ and γ2 independently represent a hydrogen atom or a heteroaryl group represented by the following formula (4), but Ar1 and Ar2 The heteroaryl group represented by the following formula (4) is independently represented. R33 R32 Formula (4) [In the formula (4), R31 to R33 independently represent a hydrogen atom, an alkyl group, an alkoxy group or an alkynyl group. At least one of R31 to R33 is an alkyl group, an alkoxy group or Alkynyl; hydrazine is a sulfur atom, an oxygen atom, a selenium atom or NR4, and R4 is a hydrogen atom, an alkyl group, an aryl group or a hetero-matrix group. [8] The method for producing a metal complex dye according to <7>, wherein LL2 in the formula (1) is represented by the following formula (7).

通式(7) [通式⑺中,R41〜R43及r5i〜R53獨立表示氫原子、烷基、 烧氧基或炔基,R41〜R43中的至少1個為烷基、烷氧基或炔 基’ R51〜R53中的至少1個為烷基、烷氧基或炔基,χι及 201238968 TI -TUOplf X2各自獨立為硫原子、氧原子、硒原子或NR7,R7為氬雇 子、烷基、芳基或雜環基。] &lt;9&gt;如&lt;8&gt;所述之金屬錯合物色素的製造方法,其中通 式(7)中的X1及X2為硫原子。 &lt;10&gt;如&lt;7&gt;〜&lt;9&gt;中任一項所述之金屬錯合物色素的製 造方法,其中通式(1)由下述通式(8)表示,通式(13)由下述 通式(15)表示,通式(14)由下述通式⑽表示。In the formula (7), R41 to R43 and r5i to R53 independently represent a hydrogen atom, an alkyl group, an alkoxy group or an alkynyl group, and at least one of R41 to R43 is an alkyl group, an alkoxy group or an alkyne group. At least one of the radicals 'R51 to R53 is an alkyl group, an alkoxy group or an alkynyl group, and χι and 201238968 TI-TUOplf X2 are each independently a sulfur atom, an oxygen atom, a selenium atom or NR7, and the R7 is an argon donor or an alkyl group. , aryl or heterocyclic group. [9] The method for producing a metal complex dye according to <8>, wherein X1 and X2 in the formula (7) are sulfur atoms. The method for producing a metal complex dye according to any one of <7>, wherein the general formula (1) is represented by the following general formula (8), and the general formula (13) ) is represented by the following formula (15), and the formula (14) is represented by the following formula (10).

L通式⑻及⑽中,M、r62、r91、r92獨立表示氫原子 ϋ ^基祕基,A1〜A4獨立表錢基或其鹽,通式 (16)中Μ表示無機或有機的麟子、f子或驗金屬離 &lt;11&gt;如&lt;7&gt;〜&lt;9&gt;中任一項所述之金屬錯合物色素的 造方法,其中通式(1)由下述通式(17)表示,通式(13)由 述通式(18)表示,通式(14)由下述通式(19)表示。 12 201238968 41468pifIn the general formulae (8) and (10), M, r62, r91, and r92 independently represent a hydrogen atom, a group of A1 to A4, or a salt thereof, and in the formula (16), an inorganic or organic lining. The method for producing a metal complex dye according to any one of <7>, wherein the formula (1) is represented by the following formula (17) It is shown that the general formula (13) is represented by the general formula (18), and the general formula (14) is represented by the following general formula (19). 12 201238968 41468pif

[^(1^ A〜A獨立表示叛基或其鹽,通式⑽中Ml3表示無機或 有機的錢離子、質子或驗金屬離子。] &lt;12&gt;—種光電轉換元件,其使用如&lt;1:&gt;〜&lt;6&gt;中任一項 所述之金屬錯合物色素組成物作為增感色素。 &lt;13&gt;—種光電轉換元件,其使用藉由w&lt;7&gt;〜&lt;u&gt;中任 一項所述之金屬錯合物色素的製造方法而製造的金屬錯合 物色素。 &lt;14&gt;一種光電化學電池,其具備如〈卜〜^中任一項 所述之光電轉換元件。 [發明的效果] 根據本發明,可提供轉換效率高、耐久性佳的光電轉 換元件及光電化學電池。 本發明的上述及其他特徵及優點可適當參照隨附的圖 式,藉由下述記載而更加明白。 【實施方式】 本發明者等反複深入研究後發現,含特定配位基的金 13 201238968 ~r L· 屬錯合物色素對溶劑的溶解性高,故可提高此色素在半導 體微粒上的吸附量’而可提供轉換效率高的光電轉換元件 及光電化學電池。本發明是基於此見解而完成。 以下參照圖1的示意性剖面圖來說明本發明的光電轉 換元件的較佳實施形態。 如圖1所示,光電轉換元件1〇包含導電支撐體1及其 上依序配置的感光體層2、電荷遷移體層3及對電極4。導 電支撐體1與感光體層2構成受光電極5。感光體層2具 有半導體微粒22與增感色素(以下亦簡稱色素)21〇增感 色素21的至少一部分吸附於半導體微粒22 (增感色素21 為吸附平衡狀態,一部分可存在於電荷遷移體層;3)。電荷 遷移體層3的功能例如是作為電洞傳輸層。形成有感光體 層2的導電支撐體1在光電轉換元件1〇中是作為作用電 極。利用外部電路6使此光電轉換元件1〇工作,即可發揮 光電化學電池100的作用。[^(1^ A~A independently represents a rebel or a salt thereof, and Ml3 in the general formula (10) represents an inorganic or organic money ion, a proton or a metal ion.] &lt;12&gt; - a photoelectric conversion element, which is used as &lt; The metal complex dye composition according to any one of the above-mentioned items, wherein the metal complex dye composition is used as a sensitizing dye. <13> A photoelectric conversion element using w&lt;7&gt;~&lt; A metal complex dye produced by the method for producing a metal complex dye according to any one of the above-mentioned items. <14> A photoelectrochemical cell comprising the photovoltaic according to any one of <Bu> [Effect of the Invention] According to the present invention, a photoelectric conversion element and a photoelectrochemical cell having high conversion efficiency and excellent durability can be provided. The above and other features and advantages of the present invention can be appropriately referred to the accompanying drawings by The present inventors have further studied and found that gold 13 201238968-r L· is a complex compound containing a specific ligand, and has high solubility in a solvent, so that this can be improved. The amount of adsorption of the pigment on the semiconductor particles can be mentioned The present invention is based on this finding. A preferred embodiment of the photoelectric conversion element of the present invention will be described below with reference to the schematic cross-sectional view of Fig. 1. The photoelectric conversion element 1A includes a conductive support 1 and a photoreceptor layer 2, a charge transport layer 3, and a counter electrode 4 arranged in this order. The conductive support 1 and the photoreceptor layer 2 constitute a light receiving electrode 5. The photoreceptor layer 2 has semiconductor fine particles 22 At least a part of the sensitizing dye 21 (hereinafter also referred to as a dye) 21 sensitizing dye 21 is adsorbed to the semiconductor fine particles 22 (the sensitizing dye 21 is in an adsorption equilibrium state, and a part may exist in the charge transport layer; 3). The charge transport layer 3 The function is, for example, a hole transport layer. The conductive support 1 on which the photoreceptor layer 2 is formed serves as a working electrode in the photoelectric conversion element 1A. By using the external circuit 6 to operate the photoelectric conversion element 1 to function as a photoelectrochemical cell The role of 100.

上述受光電極5包含導電支樓體1,以及塗在導電支 撐體1上且半導體微粒22吸附有增感色素21的感光體層 2 (半導體膜)。入射至感光體層2 (半導體膜)的光會&amp; 發色素。激發色素具有高能量電子。此電子自增感色素 傳向半導體微粒22的導帶’再擴散至導電支撐體此時 增感色素21的分子成為氧化物。電極上的電子藉外部電路 ό而工作,並回復成氧化物,而發揮光電化學電池1〇〇 作用。此時,受光電極5發揮作為此電池的負極的作用: 上述感光體層2由包含吸附後述色素的半導體微粒Q 201238968 41468pif 的層的多孔質半導體層構成。此色素可為部分在電解質中 解離的色素等。感光體層2依照目的設計,含多層結構。 如上所述,感光體層2包含吸附了特定色素的半導體 微粒22,因此受光感光度高’並且在用作光電化學電池1〇〇 時可得高光電轉換效率,且具有高耐久性。 (金屬錯合物色素組成物) 本發明的金屬錯合物色素組成物包含:下述通式(1) 所示的金屬錯合物色素、以及下述通式(5)所示的金屬錯合 物色素及/或下述通式(6)所示的金屬錯合物色素。 通式(5)所示的金屬錯合物色素及通式(6)所示者的含 有率’按HPLC的254 nm檢測的面積計,合計為〇 5〜5%。 U\hVU(^2)m2(Zl)2 . (CI1)^ 通式⑴ [通式(1)中Μ1表金屬原子,LL1為下述通式(2)所示2牙配 位基,LL2為下述通式(3)所示2牙配位基;及m2均為 1 ’ m3為0以上的整數;Z1表配位基’為選自異硫氰基、 異氰酸基及異硒氰基的至少1種’ Z1可彼此相同或不同, 較佳為相同;CI1表示需對離子中和電荷時的對離子。] r,2 R22 R’i^iR3 通式(2) [通式(2)中,R11〜r1及R21〜R24獨立表示酸性基或其鹽或氫 原子,R11〜尺14及R21〜R24可相同亦可不同,但及 15 201238968 R21〜R24中至少一個為酸性基或其鹽The light-receiving electrode 5 includes a conductive branch body 1 and a photoreceptor layer 2 (semiconductor film) coated on the conductive support 1 and in which the semiconductor fine particles 22 are adsorbed with the sensitizing dye 21. The light incident on the photoreceptor layer 2 (semiconductor film) &amp; hair dye. The excitation pigment has high energy electrons. The electron self-sensitizing dye is transferred to the conduction band of the semiconductor fine particles 22 and then diffused to the conductive support. At this time, the molecules of the sensitizing dye 21 become oxides. The electrons on the electrode work by an external circuit and return to oxide, which acts as a photoelectrochemical cell. At this time, the light-receiving electrode 5 functions as a negative electrode of the battery: The photoreceptor layer 2 is composed of a porous semiconductor layer containing a layer of semiconductor fine particles Q 201238968 41468pif which adsorbs a dye described later. This pigment may be a pigment or the like partially dissociated in the electrolyte. The photoreceptor layer 2 is designed according to the purpose and has a multilayer structure. As described above, the photoreceptor layer 2 contains the semiconductor fine particles 22 to which the specific dye is adsorbed, so that the light-receiving sensitivity is high' and high photoelectric conversion efficiency can be obtained when used as a photoelectrochemical cell 1〇〇, and high durability is obtained. (Metal complex dye composition) The metal complex dye composition of the present invention contains a metal complex dye represented by the following formula (1) and a metal complex represented by the following formula (5). A complex dye and/or a metal complex dye represented by the following formula (6). The content of the metal complex dye represented by the formula (5) and the content represented by the formula (6) are 〇 5 to 5% in terms of the area detected by 254 nm of HPLC. U\hVU(^2)m2(Zl)2 . (CI1)^ General formula (1) [The metal atom of Μ1 in the formula (1), LL1 is a 2-dentate ligand represented by the following formula (2), LL2 Is a 2-dentate ligand represented by the following formula (3); and m2 is an integer of 1 'm3 is 0 or more; the Z1 ligand is selected from the group consisting of isothiocyanato, isocyanate, and selenium. At least one 'Z1' of the cyano group may be the same or different from each other, preferably the same; CI1 represents a counter ion when the charge is neutralized to the ion. r,2 R22 R'i^iR3 Formula (2) [In the formula (2), R11~r1 and R21~R24 independently represent an acidic group or a salt or a hydrogen atom thereof, and R11~14 and R21~R24 may be used. The same or different, but at least one of 15 201238968 R21 to R24 is an acidic group or a salt thereof

通式(3) [通式(3)中’ nl、n2獨立表示〇〜3的整數,γΐ、γ2獨立表 示氫原子或下述通式(4)所示的雜芳基,Ar丨及Ar2獨立表 示下述通式(4)所示的雜芳基。] 通式(4) [通式(4)中’ W〜R33獨立表示氫原子、烷基、烷氧基或块 基’ r31〜r33中的至少1個為烷基、烷氧基或炔基。X為硫 原子、氧原子、硒原子或NR4,R4為氫原子、烷基、芳美 或雜環基。1 &amp;In the general formula (3), 'nl and n2 independently represent an integer of 〇~3, and γΐ and γ2 independently represent a hydrogen atom or a heteroaryl group represented by the following formula (4), Ar丨 and Ar2. The heteroaryl group represented by the following formula (4) is independently represented. General formula (4) [In the general formula (4), "W to R33 independently represents a hydrogen atom, an alkyl group, an alkoxy group or a block group". At least one of r31 to r33 is an alkyl group, an alkoxy group or an alkynyl group. . X is a sulfur atom, an oxygen atom, a selenium atom or NR4, and R4 is a hydrogen atom, an alkyl group, a aryl group or a heterocyclic group. 1 &amp;

Ml(LLl)mi(LL2)m2(Z1)(CN) - (CI1)^ 通式(5) L ,()中]VI1、LL1、LL2、z1、Cl1、ml、m2 及 m3 的 含義與通式(1)中的相同。] M^LL1) mi(LL2)m2(CN)2 - (CI1)^ 通式(6) [通式⑹中,M1、LL1、LL2、Z1、Cl1、ml、m2 及 m3 的 201238968 4I4t)8pif 含義與通式(1)中的相同。] (A)通式(1)所示的金屬錯合物色素 (A1)金屬原子M1 M1表示金屬原子。Μι較佳為可4配位或6配位的金 屬’更佳為釕、鐵、锇、銅、鎢、鉻、鉬、鎳、鈀、鉑、 钻、銥、姥、鍊、猛或鋅。特佳為釘、鐵鐵或銅,最佳為 釕。釕中較佳為2價釕。 (A2)配位基LL1 配位基LLi為由下述通式(2)表示的2牙。表示配位基 LL1的數量的mi為1。Ml(LLl)mi(LL2)m2(Z1)(CN) - (CI1)^ General formula (5) L , () in the meaning of VI1, LL1, LL2, z1, Cl1, ml, m2 and m3 The same in the formula (1). ] M^LL1) mi(LL2)m2(CN)2 - (CI1)^ General formula (6) [201238968 4I4t of M1, LL1, LL2, Z1, Cl1, ml, m2 and m3 in formula (6)) 8pif The meaning is the same as in the formula (1). (A) Metal complex dye represented by the formula (1) (A1) The metal atom M1 M1 represents a metal atom. Preferably, Μι is a metal having a 4 or 6 coordination position, more preferably ruthenium, iron, osmium, copper, tungsten, chromium, molybdenum, nickel, palladium, platinum, diamond, rhenium, iridium, ruthenium, lanthanum or zinc. It is especially good for nails, iron or copper, and the best is 钌. It is preferably a price of 2. (A2) Ligand LL1 The ligand LLi is a 2-dental represented by the following general formula (2). The mi indicating the number of ligands LL1 is 1.

通式(2) 通式(2)中R11〜Ri4及R2i〜R24獨立表示酸性基或其鹽或 氫原子,R11〜R14及R21〜R24可相同亦可不同。Rll〜RH及 R〜R可例舉:氫原子、酸性基(如羧基、續酸基、羥基、 經辟酸基(碳數較佳為1〜2〇、例如_c〇NHOH、-CONCi^ ΟΉ 等)、構醯基(例如-〇p(〇)(〇H)2等)或膦醯基(如_p(〇)(〇h.&gt;2 等)等)或該些的鹽。酸性基可經連結基而結合,經連結 基將上述缓基、續酸基、經基、經將酸基等酸性基結合而 成的基團亦包括在酸性基中。Rll〜Rl4及R21〜R24中的至少 一個為酸性基或其鹽。在Rll〜R!4及Rn〜R24表酸性基時, 依電子注入的觀點,酸性基較佳為羧基、磺酸基或膦醯基 等酸性基或該些的鹽,羧基或膦醯基或該些的鹽更佳,羧 17 201238968 -r J.-TVU^lf 基或其鹽尤佳。使R1 LR14及R2^R24為酸性基或其鹽或氫 原子,即可使金屬錯合物色素有效吸附於半導體微粒。 (A3)配位基LL2 配位基LL2為下述通式(3)所示的2牙配位基。表示配 位基LL2的配位基LL2的數量的m2表示1。雙鍵可為e 式亦可為Z式。In the formula (2), R11 to Ri4 and R2i to R24 independently represent an acidic group or a salt thereof or a hydrogen atom, and R11 to R14 and R21 to R24 may be the same or different. R11 to RH and R to R may, for example, be a hydrogen atom or an acidic group (e.g., a carboxyl group, a carboxylic acid group, a hydroxyl group, or an acid group (the carbon number is preferably 1 to 2 Å, for example, _c〇NHOH, -CONCi^). ΟΉ, etc.), a thiol group (for example, -〇p(〇)(〇H)2, etc.) or a phosphonium group (such as _p(〇)(〇h.&gt;2, etc.) or the like. The acidic group may be bonded via a linking group, and a group in which the above-mentioned slow group, acid group, and a group is bonded via an acid group such as an acid group via a linking group is also included in the acidic group. R11 to R14 and R21~ At least one of R24 is an acidic group or a salt thereof. When R11 to R!4 and Rn to R24 are acidic groups, the acidic group is preferably an acidic group such as a carboxyl group, a sulfonic acid group or a phosphonium group, from the viewpoint of electron injection. Or such a salt, a carboxyl group or a phosphonium group or a salt thereof is more preferable, and a carboxyl group 17 201238968 -r J.-TVU^lf group or a salt thereof is particularly preferable. R1 LR14 and R2^R24 are an acidic group or a salt thereof. Or a hydrogen atom, the metal complex dye can be efficiently adsorbed to the semiconductor fine particles. (A3) Ligand LL2 The ligand LL2 is a bidentate ligand represented by the following formula (3). The number m2 of the ligand LL2 of LL2 represents 1. Double bond Z may also be the formula for the formula e.

通式(3)中nl、n2獨立表示0〜3的整數。nl、n2較佳 為0〜3 ’ 0〜1更佳。Y1、Y獨立表不氮原子或下述通式(4) 所示的雜芳基。Ar1及Ar2獨立表示通式(4)所示的雜芳基。 通式(4)中R31〜R33獨立表示氫原子、烷基、烷氧基或 '炔基,R31〜R33中至少1個為烷基、烷氧基或炔基,烷基、 快基更佳,快基尤佳。該些基可為直鍵或分支,碳數較佳 2〜15,3〜12更佳,4〜8尤佳。使用具有該些疏水取代基的 金屬錯合物色素組成物而使其中的色素吸附於半導體微粒 時,可妨礙電荷遷移體層中的電解質中存在的水接近,而 可抑制色素自半導體微粒脫附。若疏水取代基的碳數過 多,則不僅妨礙水接近,而且亦妨礙電解質中的例如碘等 的接近,使利用氧化還原系統的還原無法順利進行。 Y1或Y2由通式(4)表示時,較佳是γι或比啶環 共軛且Ar1及Ar2與吡啶環共軛。伴隨著通式所示的γι 201238968 41468pif 或Y2的供電子性,該絲發生妹,使衫⑽分子執威 (HOMO)位準向金屬錯合物色料的金屬科^提高, =可=長波長區域的光(長波化)。通式(4)中χ為㈣ :2原子、硒原子或NR4,R、氫原子、烷基、芳基或 雜壤基。通式(4)中的X依對親核物種的穩紐、氧化難易 {•生及口成難易度的觀點,較佳為硫原子或爾、子,更佳為 ^原子。使配位基LL2為此種結構,即可發揮出抑制因色 素脫附所引起的電池性能降低以及長波化的效果。In the general formula (3), n1 and n2 independently represent an integer of 0 to 3. Preferably, nl and n2 are 0 to 3'0~1. Y1 and Y independently represent a nitrogen atom or a heteroaryl group represented by the following formula (4). Ar1 and Ar2 independently represent a heteroaryl group represented by the formula (4). In the formula (4), R31 to R33 independently represent a hydrogen atom, an alkyl group, an alkoxy group or an 'alkynyl group, and at least one of R31 to R33 is an alkyl group, an alkoxy group or an alkynyl group, and an alkyl group or a fast group is more preferable. Fast base is especially good. The bases may be straight keys or branches, and the carbon number is preferably 2 to 15, 3 to 12 is better, and 4 to 8 is particularly preferred. When the metal complex dye composition having such a hydrophobic substituent is used to adsorb the dye therein to the semiconductor fine particles, the water present in the electrolyte in the charge transport layer can be prevented from approaching, and the desorption of the pigment from the semiconductor fine particles can be suppressed. When the number of carbon atoms of the hydrophobic substituent is too large, it not only hinders the approach of water, but also hinders the proximity of, for example, iodine in the electrolyte, and the reduction by the redox system cannot be smoothly performed. When Y1 or Y2 is represented by the formula (4), it is preferably γι or conjugated to a pyridine ring and Ar1 and Ar2 are conjugated to a pyridine ring. Accompanied by the electron donating property of γι 201238968 41468pif or Y2 shown in the general formula, the silk occurs, and the metal of the shirt (10) molecule is in the direction of the metal complex compound, and = long wavelength Light in the area (long wave). In the formula (4), hydrazine is (4): 2 atoms, a selenium atom or NR4, R, a hydrogen atom, an alkyl group, an aryl group or a heterologous base. The X in the general formula (4) is preferably a sulfur atom or an argon, more preferably an atom, from the viewpoint of the stability of the nucleophilic species, the difficulty of oxidation, and the ease of formation. When the ligand LL2 has such a structure, it is possible to exhibit an effect of suppressing deterioration in battery performance and long-wavelength due to desorption of the dye.

A R31 R«通式(4) R5i 位基LL一較佳由下述通式⑺表示,其中r41〜R43及 獨立表示氫原子、燒基、烷氧基或炔基。W3 中至少1個為烧基、絲基或块基。r51〜r53中至少^個為 烷基、燒氧基或块基。χΙ、χ2各自獨立為硫原子、氧原子: 3 NR ’R7為氫原子、絲、芳基或雜環基。、雙鍵 可為E或Z型。W3較佳為絲、·。以〜心較佳 j基、炔基。通式⑺中X1、X2較佳為硫原子喝原子, 更佳。如配位基LL2為此結構,則通式(3)的^及 u夺與為2以上時相較,可得難以氧化且穩定的效果。 19 201238968 -Ti-ruupifA R31 R « General formula (4) The R5i group LL is preferably represented by the following formula (7), wherein r41 to R43 and independently represent a hydrogen atom, a pyridyl group, an alkoxy group or an alkynyl group. At least one of W3 is a burnt group, a silk base or a block base. At least one of r51 to r53 is an alkyl group, an alkoxy group or a block group. Each of ruthenium and osmium 2 is independently a sulfur atom or an oxygen atom: 3 NR 'R7 is a hydrogen atom, a silk, an aryl group or a heterocyclic group. , double button can be E or Z type. W3 is preferably silk, ·. It is preferably a cardinal group or an alkynyl group. In the formula (7), X1 and X2 are preferably a sulfur atom to drink an atom, more preferably. When the ligand LL2 has such a structure, when the sum of the formula (3) and the sum of u are 2 or more, it is difficult to oxidize and stabilize. 19 201238968 -Ti-ruupif

上述通式(1)所示金屬錯合物色素較佳由通式(8)表 示,R61、R62獨立表烧基、烷氧基或炔基,Al、A2獨立表 羧基或其鹽。R61、R62較佳為烷基、炔基。通式(1)所示金 屬錯合物色素藉此結構,利用噻吩的高供電子性而吸收長 波長區的光。又,結合於聯吡啶環的乙烯基噻吩及結合於 。塞吩的取代基可排除水接近’而可抑制色素自半導體微粒 脫附。又,藉由羧基或其鹽而可高效率地進行電子注入, 藉由供電子性咼的異硫氰基而可吸收長波長區的光。 上述通式(1)所示金屬錯合物色素具有Ll1與LL2各1 個,以LL1的酸性基部分使色素吸附於半導體微粒表面, 並使具烷基、烷氧基或炔基等疏水基的LL2配置於空間上 半導體微粒層的反側,而可有效抑制水接近及色素脫附。 (A4)配位基Z1 配位基Z1為選自異硫氰基、異氰酸基及異砸氰基的至 少1種。該些基團的供電子性高,有助於色素的長波化。 配位基Z1難為異硫氰基、異砸氮基。 (A5)對離子CI1 通$0)中的CI1表示需要對離子來中和電荷時的對離 子通吊色素是陽離子還是陰離子或是否具有正的離子 20 2〇1238968 4l468pif 3目取2色素中的金屬、配位基及取 的數目m3為〇以上的整數。 解離具有解離性基等,而使通式⑴的色素&lt; 離子a?而成為二:時’通式⑴的色素整體的電荷因對 1離子CI為正離子時,其例如為無機或有機的録離 子(如四燒基銨離子吻定鑌離子等)、驗金屬離子或質子。 對離子CI為負離子時,其例如可為無機或有機陰離 ,可例舉:li素陰離子(例如氟離子、氣離子、漠離子、 碘離子等)、取代芳基續酸離子(例如對甲苯續酸離子、對 氯笨離子等)、^·基二確酸離子(例如•苯二確酸離 子、1,5、萘二磺酸離子、2,6_萘二磺酸離子等)、烷基硫酸 離子(例如曱基硫酸離子等)、硫酸離子、硫氰酸離子、過 氣酸離子、四氟硼酸離子、六氟磷酸鹽離子、苦味酸離子、 乙酸離子、三氟甲磺酸離子等。而且,電荷均衡對離子吁 使用離子性聚合物或具有與色素相反電荷的其他色素,亦 可使用金屬錯離子(例如聯苯_1,2_二硫醇鎳(in)等)。 (B)通式(5)或(6)的金屬錯合物色素 本發明的金屬錯合物色素組成物除上述通式(丨)所承 金屬錯合物色素外,亦包含特定量的下述通式(5)所示金屬 錯合物色素與下述通式(6)所示者的至少一種,其調配比例 按HPLC的254 nm檢測的面積%計,通式(5)所示者及通 式(6)所示者的含有率合計為該組成物的0.5〜5%。 通式(5)的金屬錯合物色素有1個氰基作為配位基,通 21 201238968 Hi^oopif 1(6)的1有2個氰基作為配位基。通式(5)中,Ml、ll1、ll2、 二、Cl、瓜卜m2及m3的含義與上述通 式⑹中 M1、LL1、LL2、Z1、CI1、0 V , I 通The metal complex dye represented by the above formula (1) is preferably represented by the formula (8), R61 and R62 are independently a pendant group, an alkoxy group or an alkynyl group, and Al or A2 is independently a carboxyl group or a salt thereof. R61 and R62 are preferably an alkyl group or an alkynyl group. The metal complex dye represented by the formula (1) has a structure in which light of a long wavelength region is absorbed by the high electron donating property of the thiophene. Further, the vinyl thiophene bonded to the bipyridyl ring is bonded to. The substituent of the phenotype can exclude the water from approaching and can inhibit the desorption of the pigment from the semiconductor particles. Further, electron injection can be efficiently performed by a carboxyl group or a salt thereof, and light of a long wavelength region can be absorbed by an electron-donating isothiocyanate group. The metal complex dye represented by the above formula (1) has one each of L1 and LL2, and the dye is adsorbed on the surface of the semiconductor fine particles by the acidic group of LL1, and a hydrophobic group such as an alkyl group, an alkoxy group or an alkynyl group is used. The LL2 is disposed on the opposite side of the spatially semiconducting particle layer, and is effective for suppressing water contact and pigment desorption. (A4) Ligand Z1 The ligand Z1 is at least one selected from the group consisting of isothiocyanato, isocyanate and isodecyl. These groups have high electron donating properties and contribute to the long-wavelength of the pigment. The ligand Z1 is difficult to be an isothiocyano group or an isoindolyl group. (A5) CI1 in the ion CI1 pass $0) indicates whether the counter ion is required to neutralize the charge when the ion is cation or anion or has a positive ion 20 2〇1238968 4l468pif 3 mesh 2 metal in the pigment The ligand group and the number m3 taken are integers above 〇. When the dissociation group or the like has a dissociative group and the like, and the dye of the formula (1) &lt; ion a? becomes two: when the charge of the entire dye of the formula (1) is positive for the ion I, the inorganic ion is, for example, inorganic or organic. Record ions (such as tetrazolium ion, sputum ion, etc.), metal ions or protons. When the ion CI is a negative ion, it may be, for example, an inorganic or organic anion, and may be exemplified by a li anion (for example, a fluoride ion, a gas ion, a ionic ion, an iodide ion, or the like) or a substituted aryl acid ion (for example, a p-toluene). Continuation of acid ions, p-chloro pyridine ions, etc.), bismuth acid ions (eg, phthalic acid ion, 1,5, naphthalene disulfonate ion, 2,6-naphthalene disulfonate ion, etc.), alkane Sulfate ion (such as sulfhydryl sulfate ion), sulfate ion, thiocyanate ion, peroxy acid ion, tetrafluoroboric acid ion, hexafluorophosphate ion, picric acid ion, acetic acid ion, trifluoromethanesulfonate ion, etc. . Further, the charge equalization uses an ionic polymer or other pigment having an opposite charge to the pigment, and a metal counter ion (e.g., biphenyl-1,2-dithiol nickel (in) or the like) can also be used. (B) Metal complex dye of the formula (5) or (6) The metal complex dye composition of the present invention contains a specific amount of the pigment in addition to the metal complex dye of the above formula (丨). At least one of the metal complex dye represented by the above formula (5) and the one represented by the following formula (6) is prepared according to the area % of 254 nm detected by HPLC, and the formula (5) is shown. The content of the compound represented by the formula (6) is 0.5 to 5% of the composition. The metal complex dye of the formula (5) has one cyano group as a ligand, and has two cyano groups as a ligand in the group 1 201238968 Hi^oopif 1(6). In the formula (5), the meanings of M1, ll1, ll2, bis, Cl, cucurbit m2 and m3 are the same as those in the above formula (6), M1, LL1, LL2, Z1, CI1, 0 V, I

Li、ml、m2及m3含義與 ^述通式⑴的相同,因重複而省略。依轉換效率等性能的 觀點,較佳是通式(5)及⑹中的Μ1、IX1、LL2、Z1、α1、 ml、m2及m3的含義與通式(1)中的相同。 、 mUl^ll^^xcn) · (CI1)m3 通式(5) - (CI&gt;)m3 通式⑹ 氰基與刖述異硫氰基等相較下供電子性低。因此, 1個氰基的通式(5)所示金屬錯合物色素及有2個氰基 式⑹所不者其HOMO位準降低,賊喊長化,所 吸附於半導體餘*用作增感色素時,無法有效利 侧的光,從而導致轉換效率降低。 / 然而,當按HPLC的254 nm檢測的面積計通式(5 示金屬錯合物色素及通式(6)所示者的含有率為金屬錯A 物^素組成物的〇·5〜5%時,.則不會使轉換效率降低, 飛躍地提高色素在溶液巾的溶雜,並可提高在半導體微 粒上的色素吸附量,而得高光電轉換效率。又使色素溶^ 能在短時間内製備,提高光電轉換元件製作的生產性。^ 素在溶液中溶解性提高的理由仍不確定,但認為,雖然基 本骨架與通式(1)所示金屬錯合物色素共通,但因含$ 22 201238968 41468pif 0.5〜5%的化學性質不同的具氰基的金屬錯合物色素,故金 屬錯合物色素的結晶排列與0.5%以下的高純度時不同。 通式(5)所示金屬錯合物色素及通式(6)所示者的含有 率按HPLC的254 nm檢測的面積計為〇 5〜5%,是在以下 條件下分析時而得的值:管柱為YMC公司製的YMC-Pack ODS-AM312 150 mmx6.0 mm I.D·、流量為 0.75 ml/分鐘、 烘箱為40°C、溶離液組成為四氫呋喃/水=63/37(含有〇.ι〇/0 三氟乙酸緩衝液)、測定時間為50分鐘。 當通式(5)所示金屬錯合物色素由下述通式(9)表示且 通式(6)所示金屬錯合物色素由下述通式(10)表示時,通式 (9)所示金屬錯合物色素與通式(10)所示者的含有率的合計 按HPLC的254 nm檢測的面積計,較佳為0.5〜5%。通式 (9)中R71、R72獨立表烷基、烷氧基或炔基,A5、A6獨立 表示羧基或其鹽。通式(1〇)中R73、R74獨立表示烷基、燒 氧基或炔基,A7、A8獨立表示羧基或其鹽。R71、R72較佳 為烷基、炔基。R73、R74較佳為烷基、炔基。使通式(5)所 示金屬錯合物色素與通式(6)所示者為此種結構,且該些金 屬錯合物色素的含有率的合計按HPLC的254 nm檢測的 面積計為0.5〜5%’則色素的吸收因噻吩環的供電子性而長 波化’且因具氰基而不會導致短波化引起的明顯的轉換致 率降低’可得溶解性提高之效。按HPLC的254nm檢測的 面積計,通式(5)所示金屬錯合物色素與通式(6)所示者的含 有率的合計較佳為〇.5〜4.5〇/0’〇.5〜4%更佳,0.5〜3.5%特佳。 ΙΪ 23 201238968The meanings of Li, ml, m2 and m3 are the same as those of the general formula (1), and are omitted for repetition. From the viewpoints of performance such as conversion efficiency, it is preferred that the meanings of ruthenium 1, IX1, LL2, Z1, α1, ml, m2 and m3 in the general formulae (5) and (6) are the same as those in the general formula (1). , mUl^ll^^xcn) · (CI1)m3 General formula (5) - (CI&gt;)m3 General formula (6) The cyano group has a lower electron donating property than the isothiocyanate group. Therefore, a metal complex dye represented by the general formula (5) of one cyano group and two cyano formulas (6) have a lower HOMO level, and the thief is longer, and is adsorbed to the semiconductor. When the color is sensitive, the light on the side cannot be effectively increased, resulting in a decrease in conversion efficiency. / However, when the area detected by 254 nm of HPLC is calculated by the formula (5 shows the metal complex dye and the content of the formula (6) is 金属·5~5 of the metal erb composition. When %, the conversion efficiency is not lowered, the doping of the pigment in the solution towel is drastically improved, and the amount of dye adsorption on the semiconductor particles is increased, and the photoelectric conversion efficiency is high, and the pigment solution is short. Preparation in time to improve the productivity of photoelectric conversion element fabrication. The reason for the improvement of solubility in solution is still uncertain, but it is considered that although the basic skeleton is common to the metal complex dye represented by the general formula (1), $22 201238968 41468pif 0.5 to 5% of a metal complex dye having a cyano group different in chemical nature, so the crystal arrangement of the metal complex dye is different from that of 0.5% or less. The content of the metal complex dye and the formula (6) is 〇5 to 5% based on the area detected by 254 nm of HPLC, and is obtained by analysis under the following conditions: the column is YMC YMC-Pack ODS-AM312 150 mm x 6.0 mm ID·, flow rate 0.75 ml/min, oven 40 ° C, the composition of the solution is tetrahydrofuran / water = 63 / 37 (containing 〇.ι〇 / 0 trifluoroacetic acid buffer), the measurement time is 50 minutes. When the metal complex dye represented by the general formula (5) When the metal complex dye represented by the following formula (6) is represented by the following formula (10), the metal complex dye represented by the formula (9) and the formula (10) The total content of the content shown is preferably 0.5 to 5% based on the area of 254 nm of HPLC. In the formula (9), R71 and R72 are independently alkyl, alkoxy or alkynyl groups, and A5, A6. Independently, it represents a carboxyl group or a salt thereof. In the formula (1), R73 and R74 each independently represent an alkyl group, an alkoxy group or an alkynyl group, and A7 and A8 each independently represent a carboxyl group or a salt thereof. R71 and R72 are preferably an alkyl group or an alkynyl group. R73 and R74 are preferably an alkyl group or an alkynyl group. The metal complex dye represented by the formula (5) is represented by the formula (6), and the metal complex dye is contained. The total of the ratio is 0.5 to 5% of the area detected by 254 nm of HPLC, and the absorption of the dye is long-waved due to the electron donating property of the thiophene ring, and the cyano group does not cause a significant conversion caused by short-waveization. Rate reduction 'available The effect of the cleavage is improved. The total content of the metal complex dye represented by the formula (5) and the formula (6) is preferably 〇.5 to 4.5 按 according to the area of the 254 nm detected by HPLC. /0'〇.5~4% is better, 0.5~3.5% is especially good. ΙΪ 23 201238968

&gt; Λ I R72&gt; Λ I R72

a®通式(9)A® formula (9)

I ^CN f^N^j CN A7I ^CN f^N^j CN A7

A8 通式(10) 一較佳疋通式(5)所示金屬錯合物色素由下述通式(11)表 不丄且通式⑹所示金屬錯合物色素由下述通式(12)表示。 通^(11)及(12)中R8i〜rm獨立表示炔基,八丨3〜八16獨立表示 叛土或其鹽。此結構的金屬錯合物色素因r81〜r84為快基, 故可發揮因共㈣統伸長引起的由山的π π*躍遷產生的 =收長波化及ε提高的效果。另外估計,目r81〜r84為快 二’故此,構的金屬錯合物色素相對於嗟吩環r81〜r84的 2性提或因π電子增加,而有可能在色素吸附於半 粒表面1狀態下在分子間易發生有助於長波 Π 較佳為碳數3〜13的錢或分支炔基,其 中更佳者為碳數3〜8者,特佳者為碳數4〜7者。A8 Formula (10) A preferred compound of the metal complex represented by the formula (5) is represented by the following formula (11) and the metal complex dye represented by the formula (6) is represented by the following formula ( 12) Representation. R8i~rm in the ^(11) and (12) independently represent an alkynyl group, and the eight to three to eighty 16 independently represent a rebel or a salt thereof. Since the metal complex dye of this structure is fast-radical based on r81 to r84, the effect of the long-wavelength and ε-increased by the π π* transition of the mountain due to the extension of the common (four) system can be exhibited. In addition, it is estimated that the target r81~r84 is fast two's. Therefore, the metal complex dye of the structure is increased with respect to the quinone ring r81~r84 or by the π electron, and it is possible that the pigment is adsorbed on the surface of the half grain. It is easy to occur in the middle of the molecule to facilitate long-wave enthalpy, preferably a carbon number of 3 to 13 or a branched alkynyl group, more preferably a carbon number of 3 to 8, and a particularly preferred one having a carbon number of 4 to 7.

通式(12) 金屬錯合物色素組成物較佳是可使通式⑴的金屬錯 24 201238968 41468pif 合物色素和通式(5)所示金屬錯合物色素及/或通式(6)所示 者溶於有機溶劑中。此種有機溶劑可例舉:醇溶劑(甲酵、 乙醇、異丙醇等)、腈溶劑(乙腈、丙腈、曱氧基丙腈、戊 腈等)、酯溶劑(乙酸乙酯、丁内酯等)、醯胺系溶劑(二 曱基曱酿胺、二曱基乙醯胺、N-甲基II比Π各烧g同)、鹵素系 溶劑(二氣曱烷、二氣乙烷、氣苯、氣仿等)、苯、曱苯、 一曱苯等,無特別限制。又可為含多種溶劑的混合溶劑。 (C)金屬錯合物色素的製造方法 本發明通式(1)的金屬錯合物色素可藉含以下步驟的 方法來製造,即藉外部加熱使包含下述通式(13)的金屬錯 合物色素與下述通式(14)的化合物的混合液的溫度上升。The metal complex dye composition of the formula (12) is preferably a metal complex of the formula (1) 24 201238968 41468pif compound dye and a metal complex dye of the formula (5) and/or a formula (6) The one shown is soluble in an organic solvent. Such an organic solvent may, for example, be an alcohol solvent (methyl yeast, ethanol, isopropanol, etc.), a nitrile solvent (acetonitrile, propionitrile, decyloxypropionitrile, valeronitrile, etc.), an ester solvent (ethyl acetate, butane). Ester, etc., amidoxime solvent (dimercaptoamine, dimercaptoacetamide, N-methyl II, etc.), halogen solvent (dioxane, di-ethane, There are no particular restrictions on benzene, gas, etc., benzene, benzene, benzene, and the like. Further, it may be a mixed solvent containing a plurality of solvents. (C) Method for producing metal complex dye The metal complex dye of the formula (1) of the present invention can be produced by a method comprising the steps of externally heating to cause a metal containing the following formula (13). The temperature of the mixed solution of the compound dye and the compound of the following formula (14) increases.

Ml(LL1)ml(LL2)m2(Z2)m4 * (CI1)^ 通式(13) 通式(13)中Μ1、LL1、LL2、Cl1、ml及m2的含義與 通式(1)的相同。Z2為1或2牙配位基。Z2較佳為鹵素原子 (氟、氯、溴、碘)、水、二甲基曱醯胺基、-〇_C(=〇xCH2卜 C(=0)-〇- (P表0以上的整數,較佳為0〜6 ’ 〇〜4更佳 0〜2特佳)’更佳為氯原子、水、二曱基曱醯胺基,特佳為 氣原子。m4表1〜2的整數’Z2為1牙配位基時m4表示2, Z為2牙配位基時m4表示l°m4為2時Z2彼此可相同气 不同,較佳為相同。m5為〇以上的整數。 通式(14)的化合物由以下化學式表示。 25 201238968 —ίMl(LL1)ml(LL2)m2(Z2)m4*(CI1)^ General formula (13) The meanings of Μ1, LL1, LL2, Cl1, ml and m2 in the formula (13) are the same as those of the formula (1) . Z2 is a 1 or 2 tooth ligand. Z2 is preferably a halogen atom (fluorine, chlorine, bromine, iodine), water, dimethylammoniumamine, -〇_C (=〇xCH2Bu C(=0)-〇- (P an integer of 0 or more) Preferably, it is 0~6' 〇~4 is better 0~2 especially good) 'More preferably chlorine atom, water, dimercaptoamine group, especially good for gas atom. m4 Table 1~2 integer' When Z2 is a one-dentate ligand, m4 represents 2, and when Z is a 2-dentate ligand, m4 represents that when l°m4 is 2, Z2 may be the same gas, preferably the same. m5 is an integer of 〇 or more. The compound of 14) is represented by the following chemical formula: 25 201238968 —

MnQCN 通式(14) ^式(4)中Μ I示無機或有機的銨離子、質子或驗金 屬離子i;Q表示硫原子、氧原子細肝」子戈驗金 M+較佳為無機或有機的銨離子(例如NH4+、NBu4+、 Ν^Η )、+驗金屬離子(例如Na+、K+、Li+ ),更佳為Nh4+、 二4、κ ’特佳為NH4+、K+。就通式⑴的金屬錯合物色 …,吸收波長,即作為配位基的QCN的供電子性的方面 而言,Q較佳為硫原子、_子,更佳為硫原子。 通式(1)所示金屬錯合物色素如前所述,由下式表示。 M (LLl)mi(LL2)m2(Zi)2 . (CIi)m3 通式(1) ,式⑴中’ Μ1表示金屬原子,LLi為下述通 的2牙配位其,τ τ 2 4 )所不 與m2均表;i . /矣下述通式旦(3)所示的2牙配位基;ml ί=碼氰基的至少1種,Zl彼此可相同亦可不同ί 3 A 0 CI表示需要對離子來中和電荷時的對離子; m3為0以上的整數。 R_ 通式(2) [通式(2)中,Rll〜R14 及R21〜R24獨立地表錢性基或其鹽或 26 201238968 41468pif 氫原子,Rn〜R14及R21〜R24可相同亦可不同。其t,R 及R21〜R24中至少一個為酸性基或其鹽。]MnQCN General formula (14) ^In the formula (4), Μ I indicates an inorganic or organic ammonium ion, a proton or a metal ion i; Q represents a sulfur atom, an oxygen atom, and a fine liver. The sub-grain M+ is preferably inorganic or organic. Ammonium ions (such as NH4+, NBu4+, Ν^Η), + metal ions (such as Na+, K+, Li+), more preferably Nh4+, 2-4, κ', especially NH4+, K+. With respect to the metal complex color of the formula (1), the absorption wavelength, that is, the electron donating property of the QCN as a ligand, Q is preferably a sulfur atom or a sulfonate, more preferably a sulfur atom. The metal complex dye represented by the formula (1) is represented by the following formula as described above. M (LLl)mi(LL2)m2(Zi)2 . (CIi)m3 In the formula (1), 'Μ1 represents a metal atom, and LLi is a 2-dentate coordination of the following, τ τ 2 4 ) It is not uniform with m2; i. /矣 is a 2-dentate ligand represented by the following formula (3); at least one of ml ί=code cyano, Z1 may be the same or different from each other ί 3 A 0 CI indicates the counter ion when the ion is required to neutralize the charge; m3 is an integer of 0 or more. R_ Formula (2) [In the formula (2), R11 to R14 and R21 to R24 are independently a hydroxyl group or a salt thereof or 26 201238968 41468pif a hydrogen atom, and Rn to R14 and R21 to R24 may be the same or different. At least one of t, R and R21 to R24 is an acidic group or a salt thereof. ]

[通式(3)中’ η卜n2獨立表示〇〜3的整數,γΐ、Y2獨立本 示氫原子或下述通式(4)騎_芳基,Afl及W : 示下述通式(4)所示的雜芳基。 你 通式(4) [通式中si SR33獨立表*氣原子、燒基、烧氧基或块 基,R〜R中的至少1個錢基、餘基或炔基;X為硫 原子、氧肝、_子或邮,氫原子、錄、芳基 或雜環基。] ' 上述通式(1)〜(4)的說明與前述者相同,因重複而省略。 本發明的金屬錯合物色素可如以下合成流程所例示, 以含以下步㈣方法製造,㈣外部加熱將含上述通式⑽ 的金屬錯合物色素與上述通式⑽的化合物的混合液加 熱’使其溫度上升。含上料式(13)的金屬錯合物色素與 上述通式(14)的化合物的混合液較佳使用有機溶劑,可例 舉.醇溶劑(甲醇、乙醇、丙醇、異丙醇、丁醇等)、腈溶 4’K乙腈、丙腈、甲氧基丙腈、戊腈等)、g旨溶劑(乙酸乙 27 201238968 酉曰、Γ· 丁内酿等)、ϋ胺系溶劑( 猶、比略燒酮)、南·^甲基乙 乙烧、氣苯、氣仿等)、苯、甲苯手氣:燒、二氣 劑。又,可為含多種溶劑的混合溶:特:: 胺綠佳為醇溶劑、腈溶劑、醯 的ί 物色素與通式(14)的化合物[In the general formula (3), ηb n2 independently represents an integer of 〇~3, and γΐ, Y2 independently represents a hydrogen atom or a general formula (4) riding-aryl group, and Afl and W: show the following formula ( 4) The heteroaryl group shown. You have the general formula (4) [wherein si SR33 is independently represented by a gas atom, a pyridyl group, an alkoxy group or a block group, at least one hydroxy group, a residue group or an alkynyl group in R to R; X is a sulfur atom, Oxygen liver, _ sub or postal, hydrogen atom, recorded, aryl or heterocyclic group. The descriptions of the above general formulae (1) to (4) are the same as those described above, and are omitted for repetition. The metal complex dye of the present invention can be produced by the following synthesis scheme, and is produced by the method comprising the following step (4), (4) external heating to heat a mixture of the metal complex dye containing the above formula (10) and the compound of the above formula (10) 'Let it rise in temperature. The mixture of the metal complex dye containing the above formula (13) and the compound of the above formula (14) is preferably an organic solvent, and may be exemplified by an alcohol solvent (methanol, ethanol, propanol, isopropanol, butyl). Alcohol, etc., nitrile 4'K acetonitrile, propionitrile, methoxypropionitrile, valeronitrile, etc.), g solvent (acetic acid B 27 201238968 酉曰, Γ · butyl internal fermentation, etc.), guanamine solvent (Jude , than slightly burned ketone), South · methyl ethyl bromide, gas benzene, gas imitation, etc.), benzene, toluene gas: burning, two gas agents. Further, it may be a mixed solvent containing a plurality of solvents: a: an amine green is an alcohol solvent, a nitrile solvent, a ruthenium pigment, and a compound of the formula (14)

液加熱使其溫度上升的方法,必須是自 J / 。自外部加熱的方法是指,藉來自1 二由&quot;質而加熱上述混合液。介質可例舉:油、 、=吾ί。照射微波等的方法是藉物質吸收微波,而將微 量轉變成熱的加熱’可說是來自内部的加孰不包含 3部加熱中。照射微波等的内部加熱其加熱原理與外部 :不同疋直接將金屬錯合物加熱,因加熱能量過大而 考生混合物中所含的通式(13)的金屬錯合物色素或通式 (Μ)的化合物或通式(1)的金屬錯合物色素的分解等〔因此 子製i〇_本發明的金屬錯合物色素而言欠佳。藉外部加熱的 方法較佳可例舉:藉油浴或水蒸氣將混合液加熱的方法。 加熱的溫度與反應時間可依據所反應的金屬錯合物色素或 所用的溶劑來適當選定。加熱溫度較佳為90〜170°C,90〜 160°c更佳,100〜15〇。(:特佳,1〇〇〜14(TC最佳。反應時間 較佳為30分鐘〜12小時’ 1〜8小時更佳,2〜6小時尤佳。 28 201238968 41408pif 通式(13)的金屬錯合物色素可如下述流程所示,對具 Ru的化合物導入LL1與LL2而得。Ru源無特別限制,可 例舉:氯化釕或其水合物、後述的等,較佳為價 數為2價的後述d—KiLi與ll2的導入順序無特別限制只 較佳為自LL2起導入。z2常取決於Ru源,可藉添加劑(碘 化钟、漠化鉀、K0-C(=0)-(CH2)p-C(=0)-0K (p 為 〇 以上 的整數)等))之使用而改變。又,可使溶劑配位形成Z2。 續在所得含通式(13)之金屬錯合物色素的溶液中加化合物 (14),如上述自外部加熱,而得通式(1)的金屬錯合物色素。 LL2 Ru 源--- 溶劑 LL1The method of heating the liquid to raise its temperature must be from J / . The method of heating from the outside means that the above mixture is heated by the quality of the mixture. The medium can be exemplified by oil, and =wu. The method of irradiating microwaves or the like is to absorb the microwave by the substance and convert the micron into heat by heating. It can be said that the twist from the inside does not include three heating. Internal heating by irradiation of microwaves or the like is based on heating principle and external: differently, the metal complex is directly heated, and the metal complex compound of the formula (13) contained in the test mixture is excessively heated due to excessive heating energy or the formula (Μ) The compound or the metal complex dye of the formula (1) is decomposed or the like (so that it is not preferable for the metal complex dye of the present invention). The method of external heating is preferably a method of heating the mixture by means of an oil bath or steam. The heating temperature and reaction time can be appropriately selected depending on the metal complex dye to be reacted or the solvent to be used. The heating temperature is preferably from 90 to 170 ° C, more preferably from 90 to 160 ° C, and from 100 to 15 Torr. (: Excellent, 1〇〇~14 (TC best. The reaction time is preferably 30 minutes~12 hours' 1~8 hours better, 2~6 hours especially good. 28 201238968 41408pif Metal of general formula (13) The complex dye may be obtained by introducing LL1 and LL2 into a compound having Ru as shown in the following scheme. The Ru source is not particularly limited, and examples thereof include ruthenium chloride or a hydrate thereof, and the like, and are preferably valences. The order of introduction of di-KiLi and ll2 which are divalent is not particularly limited, but is preferably introduced from LL2. z2 is often dependent on the Ru source, and may be borrowed with additives (iodinated clock, potassium carbonate, K0-C (=0) )-(CH2)pC(=0)-0K (p is an integer above 〇), etc.)). Further, the solvent can be coordinated to form Z2. Continued in the resulting metal containing formula (13) The compound (14) is added to the solution of the pigment, and the metal complex dye of the formula (1) is obtained by external heating as described above. LL2 Ru source --- solvent LL1

;Ru&lt; (Z2)m3;Ru&lt; (Z2)m3

通式(13)General formula (13)

MnQCN 通式(14) 加熱* (LL1)MnQCN General formula (14) Heating* (LL1)

通式(1) 上述通式(13)中配位基LL2較佳由下述通式(7)表示。 通式⑺中R41〜R43及〜π各蜀立表氫原子、烧基、烧氧基 或块基。R41〜R43中至少、Hgj為烧基、烧氧基或炔基。r51〜r53 中至少1個為烷基、烷氧基或炔基。χ1、X2為硫原子、氧 Y、4f原子$NR7,R7錢原子、絲、芳基或雜環基。 R〜R較佳為烷基、炔基。〜R53較佳為烷基、炔基。 29 201238968 通式(7)中X!、X2較佳為硫原子General formula (1) The ligand LL2 in the above formula (13) is preferably represented by the following formula (7). In the formula (7), R41 to R43 and -π each represent a hydrogen atom, a burnt group, an alkoxy group or a block group. At least Hgj is a burnt group, an alkoxy group or an alkynyl group among R41 to R43. At least one of r51 to r53 is an alkyl group, an alkoxy group or an alkynyl group. Χ1, X2 is a sulfur atom, oxygen Y, 4f atom: $NR7, R7 money atom, silk, aryl or heterocyclic group. R to R are preferably an alkyl group or an alkynyl group. R53 is preferably an alkyl group or an alkynyl group. 29 201238968 X!, X2 in the formula (7) is preferably a sulfur atom

石西原子,硫原子更佳。 通式(7) 較佳的是’通式(I3)的金屬錯合物色素 由下述通式(15)Shixi atom, sulfur atom is better. The general formula (7) is preferably a metal complex dye of the formula (I3) which is represented by the following formula (15)

獨立表示羧基或其鹽。通式(16)中,M!2表示無機或有機的 錄離子、質子或鹼金屬離子。R61、R62、R9!、R92較佳為烷 基、炔基。金屬錯合物色素(13)與通式(14)的化合物為該些 結構時,因金屬錯合物色素(13)具有對親核物種的化合物 (14)穩定的嗟吩環’故可抑制不想要的親核反應,使脫離 能高且親核能低的氣成為脫離基,藉此可高效率製造-NCS 基選擇性配位於釕原子的通式(8)的金屬錯合物色素。Independently represents a carboxyl group or a salt thereof. In the formula (16), M!2 represents an inorganic or organic recording ion, a proton or an alkali metal ion. R61, R62, R9!, and R92 are preferably an alkyl group or an alkynyl group. When the metal complex dye (13) and the compound of the formula (14) are in such a structure, the metal complex dye (13) has a thiophene ring which is stable to the compound (14) of the nucleophilic species, so that it can be suppressed. In an undesired nucleophilic reaction, a gas having a high desorption energy and a low nucleophilic energy is used as a leaving group, whereby a metal complex dye of the formula (8) in which the NCS group is selectively coordinated to a ruthenium atom can be efficiently produced.

通式(8) 通式(15)通式Ο6) 201238968 41468pif 較佳的是,通式(13)的金屬錯合物色素由下述通式(i8) 表示且通式(14)的化合物由下述通式(19)表示,而製造下述 通式(17)所示金屬錯合物色素的方法。通式(17)及(18)中, Rl〇l、R1Q2、r111及RH2獨立表示炔基,a9〜a12獨立表示羧 基或其鹽。通式(19)中,M13表示無機或有機的録離子、質 子或驗金屬離子。R101、R102、R111及R112較佳為碳數3〜13 的直鍵或分支快基,其中碳數3〜8者更佳,碳數4〜7尤佳。General formula (8) Formula (15) Formula 6) 201238968 41468pif Preferably, the metal complex dye of the formula (13) is represented by the following formula (i8) and the compound of the formula (14) is A method of producing a metal complex dye represented by the following formula (17) by the following formula (19). In the general formulae (17) and (18), R10, R1Q2, r111 and RH2 independently represent an alkynyl group, and a9 to a12 independently represent a carboxyl group or a salt thereof. In the formula (19), M13 represents an inorganic or organic recording ion, a proton or a metal ion. R101, R102, R111 and R112 are preferably a direct bond or a branched fast radical having a carbon number of 3 to 13, wherein a carbon number of 3 to 8 is more preferable, and a carbon number of 4 to 7 is particularly preferable.

通式(1)所示的色素在溶液中的極大吸收波長為5〇〇〜 700 nm的範圍,更佳為5〇〇〜650 nm的範圍。 以下為本發明所用的具通式(1)所示結構的色素的具 體例,但本發明不限於此。另外,下述具體例中的色素包 含具有質子解離性基的配位基時,此配位基可視需要解離 而與對離子形成鹽。另外,還存在基於雙鍵部位的異構物, 或基於錯合物的配位基的位置的異構物等,但該些異構物 可為任意種類,亦可為混合物。 31 201238968 C5H1inThe maximum absorption wavelength of the dye represented by the formula (1) in the solution is in the range of 5 Å to 700 nm, more preferably in the range of 5 Å to 650 nm. The following is a specific example of the dye having the structure represented by the formula (1) used in the present invention, but the present invention is not limited thereto. Further, when the dye in the following specific examples contains a ligand having a proton-dissociable group, the ligand may be dissociated as needed to form a salt with the counter ion. Further, an isomer based on a double bond site or an isomer of a position based on a complex of a complex compound may be present, but the isomer may be of any type or a mixture. 31 201238968 C5H1in

D-2D-2

D&lt;6D&lt;6

32 201238968. HIHOOpif32 201238968. HIHOOpif

(D)電荷遷移體 本發明的光電轉換元件10所用的電解質組成物中,氧 化還原對可例舉:碘與碘化物(如碘化鋰、碘化四丁基銨、 33 201238968. -Tl-TUUpif 埃化四丙基銨等)的組合、桉其粗1 γ t t 、 氯化甲基紫精、淳化己a kylvlologen)(如 、…以 基各精、四氟硼酸苄基紫精)與敌 if物的組合、㈣基苯類(如對苯二酴、萘二盼等)邀 匕t的組ί、2價鐵錯合物與3價鐵錯合物(例如k 血鹽與頁血^的組合等,其中較佳為賴破化物的組合。 二2陽,子較佳為5員或6員環的含氮芳香族陽離 所示化合物不是碘鹽時,較佳是併用以 =二.日本專利再公表W095/18456號公報日 誦號公報、電化學第65卷n號923頁(199) 年)專所記載的如定鏽鹽、料鏽鹽、三销鹽等。 本發明的光電轉換元件10所用的電解質組成物中較 =與雜環四級氣化合物—料有^韻含量相對於電 解質組成減體較佳為al〜2Gwt%,更佳為G5〜5 wt%。 本發明的光電轉換元件10所用的電解質組成物可包 二溶劑。電解質組成物巾的溶劑含量較佳為組成物總體的 5〇Wt%以下’更佳為3〇wt%以下,特佳為i〇wt%以下。 為在低黏度下得高離子遷移率或在高介電常數下提高 有效載子濃度,或為上述兩者,溶劑較佳為離子傳導性佳 者,可例舉:碳_化合物(碳酸乙二、碳酸丙二酿等)、 雜環化合物(3-甲基_2♦坐烧化合物(二姚、 二乙轉)、鏈狀_ (乙二醇二_、丙二醇二賊、聚 乙二醇,親、聚丙二醇二賊等)、醇類(甲醇、乙醇、 乙二醇單舰、丙二醇單_、聚乙二醇單賴、聚丙二 醇單賊等)、多辦類(乙二醇、丙二醇、聚乙二醇、聚 34 201238968 41468pif 丙二醇、甘料)、腈化合物(乙腈、戊二腈、甲氧基乙猜、 腈、雙氰基乙鱗h賴(賴酯、鱗酸醋、 膦酉U曰專)、非質子性極性溶劑(二甲亞碾、環丁砜等)、 水、日本專利特開2〇〇2_11〇262記載的含水電解液曰 專利特開2000-36332號公報、日本專利特開2_·243134 號報及日本專利再公表WO/。。·5·號公報記載的電解 質溶劑等。該些溶劑可混合二種以上來使用。 又,電解質溶劑可使用在室溫下為液態、熔點低於室 溫的無電化學活性的鹽,可例舉:丨_乙基_3_甲基咪唑鏽三 氟甲績酸鹽、K 丁基-3_甲基_销三氟Η酸鹽等味唾^ ΠΠ·比疋錄鹽荨含氮雜壞四級氯化合物,或四烧基錢鹽等。 本發明的光電轉換元件所用的電解質組成物中可添加 聚合物或油凝膠化劑,或可藉由多官能單體類的聚合或聚 合物的交聯反應等方法進行凝膠化(固體化)。 藉由添加聚合物而使電解質組成物凝膠化時,可添加 Polymer Electrolyte Reviews-1 &amp; 2( J. R. MacCallum A C. A.(D) Charge Transporter In the electrolyte composition used in the photoelectric conversion element 10 of the present invention, the redox pair may be exemplified by iodine and iodide (e.g., lithium iodide, tetrabutylammonium iodide, 33 201238968. -Tl- a combination of TUUpif tetrapropylammonium, etc., 桉 粗 粗 1 γ tt , chlorinated methyl viologen, 淳 己 a kylvlologen) (eg, basal essence, benzyl violet tetrafluoroborate) and Combination of enemy if, (4) benzene (such as p-benzoquinone, naphthalene dip, etc.) invites group t, bivalent iron complex and trivalent iron complex (such as k blood salt and blood a combination of ^, etc., wherein a combination of lysines is preferred. The second cation, preferably a 5- or 6-membered ring containing a nitrogen-containing aromatic cation is not an iodide salt, preferably used together = 2. Japanese Patent Re-publication No. W095/18456, Japanese Journal No., Electrochemistry No. 65, No. 923 (199), such as rust salt, rust salt, and three-pin salt. The electrolyte composition used in the photoelectric conversion element 10 of the present invention has a ratio of the ratio of the rhodium content to the heterocyclic fourth-order gas compound, preferably from 2 to 2 Gwt%, more preferably from G5 to 5 wt%. . The electrolyte composition used in the photoelectric conversion element 10 of the present invention may contain a solvent. The solvent content of the electrolyte composition towel is preferably 5 〇 Wt% or less of the total composition, more preferably 3 〇 wt% or less, and particularly preferably i 〇 wt% or less. In order to obtain high ion mobility at a low viscosity or to increase an effective carrier concentration at a high dielectric constant, or both, the solvent is preferably an ion conductivity, and a carbon compound (carbonic acid) is exemplified. , propylene carbonate, etc.), heterocyclic compounds (3-methyl 2 ♦ stimulating compounds (two Yao, two ethylene), chain _ (ethylene glycol bis, propylene glycol, two thieves, polyethylene glycol, Pro, polypropylene glycol thieves, etc.), alcohols (methanol, ethanol, ethylene glycol single ship, propylene glycol mono-, polyethylene glycol mono-, polypropylene glycol mono-thief, etc.), more (ethylene glycol, propylene glycol, Polyethylene glycol, poly 34 201238968 41468pif propylene glycol, glycol), nitrile compound (acetonitrile, glutaronitrile, methoxy b., nitrile, dicyandiethyl sulphate (Lysyl ester, vinegar vinegar, phosphine 酉 U曰Special), aprotic polar solvent (dimethyl sulfite, sulfolane, etc.), water, and the aqueous electrolyte described in Japanese Patent Laid-Open Publication No. 2000-36332, Japanese Patent Laid-Open No. 2000-36332 The electrolyte solvent described in the Japanese Patent Publication No. 243,134, and the Japanese Patent Publication No. WO/. These solvents may be used in combination of two or more. Further, as the electrolyte solvent, an electrochemically active salt which is liquid at room temperature and has a melting point lower than room temperature may be used, and exemplified by 丨_ethyl_3_methylimidazole rust Trifluoromethane acid salt, K butyl-3_methyl_pin trifluoroantimonate, etc., such as sputum, 疋, 疋 疋 荨 荨 荨 荨 荨 荨 荨 荨 荨 荨 荨 荨 荨 荨 荨 荨 荨 荨 荨 荨 荨 荨 。 。 。 。 。 A polymer or an oil gelling agent may be added to the electrolyte composition used in the photoelectric conversion element of the present invention, or may be gelled by a polymerization of a polyfunctional monomer or a crosslinking reaction of a polymer (solidification). When the electrolyte composition is gelled by adding a polymer, Polymer Electrolyte Reviews-1 &amp; 2 ( JR MacCallum A CA can be added)

Vincent 共同編寫、ELSEVIER APPLIED SCIENCE)記载 的化合物等,此時較佳是使用聚丙烯腈或聚偏二氟乙烯。 藉由添加油凝膠化劑使電解質組成物凝膠化時,油凝 膠化劑可使用 J. Chem. Soc. Japan,Ind. Chem. Soc.,46779 (1943)、J. Am. Chem. Soc.,Ill, 5542 (1989)、J· Chem. Soc., Chem. Commun.,390 (1993)、Angew. Chem. Int. Ed· Engl., 35, 1949 (1996) ' Chem. Lett., 885 (1996) ' J. Chem. Soc., Chem· Commun·,545 (1997)等所記载的化合物,較佳是使 35 201238968 用具有醯胺結構的化合物。 利用多官能單體類的聚合而將電解質組成物凝膠化 時,較佳為以下方法··由多官能單體類、聚合起始劑、電 解,及溶劑製備溶液,以澆鑄法、塗布法、浸泡法、含浸 套,方去,在承載了色素的電極上形成溶膠狀電解質層, 再藉多官能單體的自由基聚合使其凝膠化。多 較佳為具有2個以上乙稀性不飽和基的化合物類 :乙烯基笨、乙二醇二丙烯酸醋、乙二醇二甲基丙烯酸酿、 二^一醇二丙烯酸酯、二乙二醇二曱基丙烯酸酯、三乙二 二&quot;I丙婦酸8旨、二乙二醇二曱基丙稀酸醋、季戊四醇三丙 烯馱酯、三羥曱基丙烷三丙烯酸酯等。 — 能單上述多官能單體類外,可利用含單官 早體的混合物的聚合而形成。單官能單體 f或〜絲丙稀酸(輯酸、甲基丙烯酸、衣康酸等)或 或醯胺或乙烯酯類(乙酸乙烯酯等)、順丁烯二i 順丁烯或t該些衍生的_ (順獨二酸二甲酉旨、 的鈉鹽、‘谓二酸二乙料)、對苯乙婦續酸 騎f基丙烯腈、二烯類(丁二稀、環戊二 乙稀、、三麵乙縣化合物(苯⑽、對氯苯 N-乙嫌美婦、^•甲基苯乙稀、苯乙烯續酸納等)、 醯胺、Ν土乙、廳、Ν·乙婦基_Ν甲基甲醯胺、①乙婦基乙 納、埽丙甲基乙酿胺、乙稀基續酸、乙烯基續酸 =基械鈉、甲基丙烯基續酸納、偏二敦乙烯、偏 一氣乙烯、乙縣(甲基乙烯轉)、乙稀、 36 201238968 ^I408pif 丁烯、異丁烯、N-苯基順丁烯二醯亞胺等。 相對於賴_,多官能單義繼量較佳設為〇 ^ 7〇wt/。,、更佳為L0〜50wt%。上述單體可藉由大津隆行、 木下雅悅共著「高分子合成的實驗法」(化學同人)或大 隆行「講座聚合反應論i -自由基聚合(1)」(化學同人)記 載的-般的高分子合成法即自由基聚合而聚合。本發 用的凝膠電解質用單體可藉加熱、光或電子束而行自由基 聚合或電化學自由基聚合,特佳是藉加熱而自由基聚合: 此時可較佳使用的聚合起始劑為:2,2,·偶氮雙異丁 偶氮雙(2,4_二甲基戊腈)、2,2,_偶氮雙(2-甲基丙酸)二’甲 酉曰2,2偶氮雙異丁酸二甲醋等偶氮系起始劑,過氧化 ,基、^氧化苯甲醯、過氧化辛酸三級丁§旨等過氧化物系 起始劑等。相騎賴總量,聚合起始_添加量較佳為 0.01 〜20 wt%,更佳為 0.1 〜10 wt〇/0。 凝膠電解質中所姑單體的重量組成範圍較佳為〇·5〜% wt%,L0〜50 wt%更佳。在藉聚合物交聯反應使電解質組 成物凝膠彳b時’較佳是在組成物巾添加具有可交聯的反應 f基的聚合物及交聯劑。較佳的反應性基為对環、味嗤 °塞哇環、射環、三顿、嗎㈣環K環、娘噪 環等含氮雜環,較佳的交㈣為有2伽上的氮原子可親 核攻擊的官能基的化合物(親電子劑),例如為2官能以上 的齒化燒、_化芳燒、續酸目旨、断、職、純酸醋等。 本發明的電解質組成物可添加金屬碘化物(LiI、NaI、 KI、CsI、Cal2 等)、金屬溴化物(LiBr、NaBr、KBr、CsBr、 37 201238968t I Λ ( Lyil.A compound or the like described by Vincent Co., Ltd., ELSEVIER APPLIED SCIENCE), in which case polyacrylonitrile or polyvinylidene fluoride is preferably used. When the electrolyte composition is gelated by the addition of an oil gelling agent, the oil gelling agent can be used by J. Chem. Soc. Japan, Ind. Chem. Soc., 46779 (1943), J. Am. Chem. Soc., Ill, 5542 (1989), J. Chem. Soc., Chem. Commun., 390 (1993), Angew. Chem. Int. Ed Engl., 35, 1949 (1996) 'Chem. Lett., 885 (1996) 'J. Chem. Soc., Chem. Commun., 545 (1997), etc., preferably a compound having a guanamine structure for use in 35 201238968. When the electrolyte composition is gelated by polymerization of a polyfunctional monomer, the following method is preferred: a solution is prepared from a polyfunctional monomer, a polymerization initiator, an electrolysis, and a solvent, by a casting method or a coating method. The immersion method and the impregnation sleeve are used to form a sol-like electrolyte layer on the electrode carrying the pigment, and then gelled by radical polymerization of a polyfunctional monomer. More preferably, it is a compound having two or more ethylenically unsaturated groups: vinyl stupid, ethylene glycol diacrylate vinegar, ethylene glycol dimethacrylic acid brewing, dihydric alcohol diacrylate, diethylene glycol Dimercapto acrylate, triethylene succinate &quot; I propyl benzoic acid 8, diethylene glycol dimercapto acrylate vinegar, pentaerythritol tripropylene decyl ester, trihydroxy decyl propane triacrylate, and the like. - It can be formed by polymerization of a mixture containing a single precursor, in addition to the above-mentioned polyfunctional monomer. Monofunctional monomer f or ~silicic acid (acid, methacrylic acid, itaconic acid, etc.) or decylamine or vinyl ester (vinyl acetate, etc.), maleic i cisene or t Some derived _ (sodium dimethyl sulphate, sodium salt, 'pre-dibasic acid), benzoic acid, acid-based riding acrylonitrile, diene (butadiene, cyclopentane) Ethyl, three-side B compound (benzene (10), p-chlorobenzene N-ethyl suspected beauty, ^ methyl styrene, styrene sodium, etc.), guanamine, Ν, B, Hall, Ν乙妇基_Νmethylmethamine, 1 ethyl ethoxylate, propyl propyl ethanoamine, ethylene benzoic acid, vinyl acid ● sodium, methacrylic sodium, partial Erdun ethylene, partial ethylene, ethylene (methyl ethylene), ethylene, 36 201238968 ^I408pif butene, isobutylene, N-phenyl maleimide, etc. Relative to Lai, multi-functional single Preferably, the amount of the monomer is 〇^7〇wt/., more preferably L0~50wt%. The above monomer can be jointly studied by Otsu Takayuki and Katsuyuki Yasushi, "Experimental Method for Polymer Synthesis" (Chemical Fellow) or Dalongxing "Lecture Aggregation The i-radical polymerization (1)" (Chemicals) describes a general polymer synthesis method, that is, polymerization by radical polymerization. The monomer for gel electrolyte used in the present invention can be heated, light or electron beam. Radical polymerization or electrochemical radical polymerization, particularly preferably by free radical polymerization: The polymerization initiator which can be preferably used at this time is: 2, 2, azobisisobutyrazo double (2, 4) Azo-based initiators such as _ dimethyl valeronitrile, 2, 2, azobis(2-methylpropionic acid) bis-formaldehyde 2,2 azobisisobutyric acid dimethyl vinegar, Oxidation, base, benzophenone, peroxyoctanoic acid, tertiary peroxide, etc., peroxide initiators, etc. The total amount of polymerization is preferably 0.01 to 20 wt%, more preferably Preferably, it is 0.1 to 10 wt〇/0. The weight composition of the monomer in the gel electrolyte is preferably 〇·5~% wt%, more preferably L0 〜50 wt%. The electrolyte is crosslinked by the polymer. When the composition gel 彳b, it is preferred to add a polymer having a crosslinkable reaction group f and a crosslinking agent to the composition. The preferred reactive group is a ring, a miso, a ring, and a shot. Ring, three, (4) a nitrogen-containing heterocyclic ring such as a ring K ring or a ring-nosed ring, and preferably a cross (IV) is a compound (electrophilic agent) having a functional group capable of nucleophilic attack by a nitrogen atom of 2 g, for example, a bifunctional or higher chiral burning _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ NaBr, KBr, CsBr, 37 201238968t I Λ ( Lyil.

CaBr 2專)、四級錄溴鹽(溴化四烧基敍、漠化吡啶鏽等)、 金屬錯合物(亞鐵氰酸鹽_鐵氰酸鹽、二茂鐵_二茂鐵離子 等)、硫化合物(聚硫化鈉、烷基硫醇-烷基二硫化物等)、 篡原色素、對苯二酚-醌等。該些化合物亦可混合而使用。 又,本發明可添加 j. Am. Ceram. Soc.,80 (12),3157- 3171 (1997)記載的三級丁基0比咬或2甲基。比唆、2,6·二甲 基吡啶等鹼性化合物,添加的較佳濃度範圍為〇〇5〜2Μ。 另外,本發明的電解質可使用包含電洞導體物質的電 荷傳輸層。電洞導體物質可使用9,9,_螺聯苗衍生物等。 另外’可依序積層電極層、感光體層(光電轉換層)、 電荷遷移體層(電洞傳輸層)、傳導層、對電極層。可使用 發揮Ρ型半導體功能的電洞傳輸材料製成電洞傳輸層。較 =電洞傳輸層例如可使用無機或有機系電洞傳輸材料。 ^、機系電洞傳輸材料可例舉CuI、⑽、則#。另 二電,傳^材料可例舉高分子系與低分子系的電洞傳輸材 機聚石夕烧等。另外,低分+系觉,门扁^ 機有 、腙衍生物、笨丙甲胺衍生物等。 j,有機聚魏與先前的碳系高分子不同, =非定域化的σ電子有助於光傳導,並遷 移率,因此較佳⑽y,Rev.B,35,期(】987)y的電㈣ -機ί=只佳即可’無特別限制,可例舉: 間電何遷移錯合物等。其中,較佳為由施體材料i受= 38 201238968 41468pif 分子間電荷遷移錯合物。其中,可較佳使用由有 機施體與有機受體形成的分子間f荷遷移錯合物。 此傳導層的厚度無特別限制,較佳為可將多孔質完全 埋住的程度。 -CaBr 2 special), four-stage bromine salt (brominated tetraalkyl sulfonate, desertified pyridine rust, etc.), metal complex (ferrocyanate _ ferric cyanide, ferrocene _ ferrocene ion, etc. ), a sulfur compound (polysulfide, alkylthiol-alkyl disulfide, etc.), ruthenium pigment, hydroquinone-oxime, and the like. These compounds can also be used in combination. Further, in the present invention, a tertiary butyl group 0 or a 2-methyl group described in j. Am. Ceram. Soc., 80 (12), 3157-3171 (1997) can be added. A preferred concentration range for the basic compound such as hydrazine or 2,6-dimethylpyridine is 〇〇5 to 2Μ. Further, the electrolyte of the present invention may use a charge transport layer containing a hole conductor material. As the conductor material of the hole, a 9,9, _ snail vaccine or the like can be used. Further, the electrode layer, the photoreceptor layer (photoelectric conversion layer), the charge transport layer (hole transport layer), the conductive layer, and the counter electrode layer may be sequentially laminated. The hole transport layer can be made using a hole transport material that functions as a germanium type semiconductor. In contrast to the hole transport layer, for example, an inorganic or organic hole transport material can be used. ^, the machine hole transmission material can be exemplified by CuI, (10), then #. The other electric materials and the materials to be transferred can be exemplified by a polymer-transfer material of a polymer system and a low-molecular system. In addition, the low score + system sense, the door flat machine has, hydrazine derivatives, stupid methylamine derivatives. j, organic poly-wet is different from previous carbon-based polymers, = non-localized σ electrons contribute to light transmission, and mobility, so it is better (10) y, Rev. B, 35, period (] 987) y Electric (four) - machine ί = only good can be 'no special restrictions, can be exemplified: inter-electrical transfer and complex. Among them, it is preferred that the donor material i receives = 38 201238968 41468pif intermolecular charge transport complex. Among them, an intermolecular f-load migration complex formed by an organic donor and an organic acceptor can be preferably used. The thickness of the conductive layer is not particularly limited, and it is preferably such that the porous material can be completely buried. -

上述施體材料較佳為分子結構内電子富集的材料。例 如’有機施體材料可例舉分子的^電子系統中具有胺基、 羥^、醚基、硒或硫原子的材料,具體可列舉苯基胺系、 二苯基甲烷系、咔唑系、酚系、四硫富瓦烯系材料。受體 材料較佳為分子結構内電子缺乏的材料。例如,有機受體 材料可例舉富勒烯、分子的7[電子系統中具有硝基、氰基、 綾基或鹵素基等取代基的材料,具體可例舉:pcBM ([6,6]-phenyl-C61-butyric acid methyl ester)、苯醌系、萘 醌系等醌系、芴酮系、四氣笨醌系、四溴笨醌系、四氰基 對醌二曱烷系、四氰基乙烯系等。 (E)導電性支撐體 如圖1所示,本發明的光電轉換元件是在導電支撐體 1上形成感光體層2’此感光體層2是在多孔質的半導體微 粒22上吸附增感色素21而成。如後所述,例如可將半導 體微粒的分散液塗布於導電支撐體上並乾燥後,浸泡於本 發明的色素溶液中,而製造感光體層2。 導電支撐體1可使用:如金屬般本身有導電性的支撐 體,或表面有導電膜層的玻璃或高分子材料。導電支撐體 1較佳為實質上透明,也就是光透射率為10%以上,較佳 為50%以上,80%以上尤佳。導電性支撐體1可使用在玻 39 201238968 璃或高分子材料上塗設導電金屬氧化物的支撐體。此時導 電金屬氧化物的塗布1 ’對於玻璃或高分子材料支撐體每 1 m2較佳為0.1〜1〇〇 g。使用透明導電支撐體時,較佳令光 自支撐體側入射。較佳使用的高分子材料可例舉:四乙醯 基纖維素(TAC)、聚對苯二甲酸乙二酯(pet)、聚萘二 甲酸乙二酯(PEN)、間規聚苯乙烯(SPS)、聚苯硫醚 (PPS)、聚碳酸酯(pc)、聚芳酯(PAR)、聚砜(pSF)、 聚醋颯(PES)、聚醚醯亞胺(PEI)、環狀聚烯烴、溴化苯 氧基等。在導電性支撐體丨上,可對表面賦予光管理功能, 其可提高:日本專利特開2003-123859記載的將高折射膜 及低屈性率的氧化物膜交替積層的抗反射膜、日本專利特 開2002-260746記載的導光功能。 •此外,使用金屬支樓體亦佳,其一例可例舉:鈦、鋁、 銅鎳、鐵、不鏽鋼、銅。該些金屬亦可形成合金。更佳 為鈦、鋁、銅,特佳為鈦或鋁。 導電性支樓體1上較佳具有紫外光阻斷功能 〇例如 H ·、使可將紫外光變為可見光㈣光材料存在透明 樓體2其表面的方法,或使时外線吸收劑的方法。 119=電性支樓體1上,還可賦予日本專利特開 11-250944號公報等所記載的功能。 鈕Ϊ佳^導電膜可例舉:金屬(例如翻、金、銀、郝 才盡隸士等)、碳或導電金屬氧化物(銦-錫複合氧化4 摻雜氟*成的導電金屬氧化物等)。 導電膜的厚度較佳為0.01〜30輝’ 0.03〜25 _更七 201238968 41468pif 0.05~20 ywm 特佳。 導電性支撐體1的表面電阻愈低愈佳,較佳範圍為切 Ω/cm2以下,1〇 Ω/cm2以下更佳。下限無特別限 為Ο.ΙΩ/cm2左右。 若單元面積變大,則導電膜的電阻值變大,因此亦可 配置集電電極。在導電支撐體丨與透明導電膜之間亦可配 置氣體阻隔膜及防止離子擴散膜的任一種或兩種。氣體阻 隔層可使用樹脂膜或無機膜。 另外,亦可設置含有透明電極與多孔質半導體電極光 觸媒的層。透明導電膜亦可為積層結構,較佳的方法例如 可在氧化銦錫(ITO)上積層摻氟氧化錫(ft〇)。 (F)半導體微粒 如圖1所示’本發明的光電轉換元件1〇是在導電支撐 體1上形成感光體層2,此感光體層2是增感色素21吸^ 於多孔質半導體微粒22上而成。如後所述,例如可將半導 體微粒22的分散液塗布於導電性支撐體1上並乾燥後,再 浸泡於上述色素溶液中’以製造感光體層2。 半導體微粒22較佳使用金屬的硫屬化物(例如氧化 物、硫化物、硒化物等)或鈣鈦礦的微粒。金屬 物較佳可例舉:鈦、錫、鋅、 釔、鑭、釩、鈮,或鈕的氧化物、硫化鎘、硒化鎘等。鈣 鈦礦較佳可例舉鈦酸鳃、鈦酸鈣等,該些中特佳者為氧化 鈦、氧化鋅、氧化錫、氧化鶴。 ’ 半導體有與導電有關的載子為電子的n型以及載子為 201238968 裊· v 電洞的P型’本發明的元件中,依轉換效率的觀點,較佳 使用η型。n型半導體除了不具雜質能階而導帶電子與價 電子帶電洞的載子濃度相等的固有半導體(例如本質半導 體)外’依照雜質引起的結構缺陷,而存在電子載體濃度 高的η型半導體。本發明可較佳使用的η型無機半導體為:The above donor material is preferably a material in which electrons are concentrated in the molecular structure. For example, the organic organic material may, for example, be a material having an amine group, a hydroxy group, an ether group, a selenium or a sulfur atom in a molecular electronic system, and specific examples thereof include a phenylamine system, a diphenylmethane system, and an oxazole system. A phenolic or tetrathiafulvalene-based material. The acceptor material is preferably a material lacking electrons within the molecular structure. For example, the organic acceptor material may, for example, be a fullerene or a molecule having 7 or a substituent having a substituent such as a nitro group, a cyano group, a fluorenyl group or a halogen group in the electronic system, and specifically, a pcBM ([6,6]- phenyl-C61-butyric acid methyl ester), benzoquinone, naphthoquinone, etc., anthraquinone, anthrone, four gas abbreviated, tetrabromo adenine, tetracyanoquinone dioxane, tetracyano Vinyl and the like. (E) Conductive support body As shown in FIG. 1, the photoelectric conversion element of the present invention forms a photoreceptor layer 2' on the conductive support 1 which adsorbs the sensitizing dye 21 on the porous semiconductor fine particles 22. to make. As will be described later, for example, a dispersion of the semiconductor fine particles can be applied onto the conductive support and dried, and then immersed in the dye solution of the present invention to produce the photoreceptor layer 2. As the conductive support 1, a support which is electrically conductive like a metal or a glass or a polymer material having a conductive film layer on its surface can be used. The conductive support 1 is preferably substantially transparent, that is, the light transmittance is 10% or more, preferably 50% or more, and more preferably 80% or more. As the conductive support 1, a support in which a conductive metal oxide is coated on a glass or a polymer material can be used. At this time, the coating 1' of the conductive metal oxide is preferably 0.1 to 1 〇〇 g per 1 m 2 of the glass or polymer material support. When a transparent conductive support is used, it is preferred that light is incident from the side of the support. The polymer material to be preferably used may, for example, be tetraethylidene cellulose (TAC), polyethylene terephthalate (pet), polyethylene naphthalate (PEN), or syndiotactic polystyrene ( SPS), polyphenylene sulfide (PPS), polycarbonate (pc), polyarylate (PAR), polysulfone (pSF), polyacetate (PES), polyetherimide (PEI), cyclic poly Olefins, brominated phenoxy groups, and the like. In the conductive support body, a light management function can be provided on the surface, and an antireflection film in which a high refractive film and a low refractive index oxide film are alternately laminated in Japanese Patent Laid-Open Publication No. 2003-123859 can be used. The light guiding function described in JP-A-2002-260746. • In addition, it is also preferable to use a metal branch body, and examples thereof include titanium, aluminum, copper nickel, iron, stainless steel, and copper. These metals can also form alloys. More preferably titanium, aluminum, copper, and particularly preferably titanium or aluminum. The conductive branch body 1 preferably has an ultraviolet light blocking function, for example, H · , a method of changing the ultraviolet light into a visible light (four) light material, a surface of the transparent floor 2, or a method of making the outer line absorbent. The function described in Japanese Laid-Open Patent Publication No. Hei 11-250944, and the like. Niu Tongjia ^ conductive film can be exemplified by: metal (such as turn, gold, silver, Hao Cai, etc.), carbon or conductive metal oxide (indium-tin composite oxide 4 doped fluorine * conductive metal oxide Wait). The thickness of the conductive film is preferably 0.01 to 30 hui' 0.03 to 25 _ more seven 201238968 41468pif 0.05 to 20 ywm. The lower the surface resistance of the conductive support 1 is, the better the range is preferably Ω/cm 2 or less, more preferably 1 〇 Ω/cm 2 or less. The lower limit is not particularly limited to about Ι.ΙΩ/cm2. When the cell area is increased, the resistance value of the conductive film becomes large, so that the collector electrode can also be disposed. Any one or two of a gas barrier film and an ion diffusion preventing film may be disposed between the conductive support 丨 and the transparent conductive film. A resin film or an inorganic film can be used for the gas barrier layer. Further, a layer containing a transparent electrode and a porous semiconductor electrode photocatalyst may be provided. The transparent conductive film may also be a laminated structure, and a preferred method is, for example, laminating fluorine-doped tin oxide (ft 〇) on indium tin oxide (ITO). (F) Semiconductor Fine Particles As shown in Fig. 1, the photoelectric conversion element 1 of the present invention forms a photoreceptor layer 2 on the conductive support 1, and the photoreceptor layer 2 is a sensitizing dye 21 adsorbed on the porous semiconductor fine particles 22 to make. As described later, for example, the dispersion of the semiconductor fine particles 22 can be applied onto the conductive support 1 and dried, and then immersed in the above-mentioned dye solution to produce the photoreceptor layer 2. The semiconductor fine particles 22 are preferably metal chalcogenides (e.g., oxides, sulfides, selenides, etc.) or fine particles of perovskite. The metal may preferably be an oxide of titanium, tin, zinc, antimony, bismuth, vanadium, niobium or a button, cadmium sulfide or cadmium selenide. The perovskite is preferably exemplified by barium titanate or calcium titanate. Among them, titanium oxide, zinc oxide, tin oxide, and oxidized crane are particularly preferred. In the element of the present invention in which the semiconductor-conducting carrier is an electron-based n-type and the carrier is a 201238968 袅·v hole, the n-type is preferably used from the viewpoint of conversion efficiency. The n-type semiconductor has an n-type semiconductor having a high electron carrier concentration in addition to an intrinsic semiconductor having an equal concentration of carriers of an electron-charged hole (e.g., an intrinsic semiconductor) except for an impurity level. The n-type inorganic semiconductor which can be preferably used in the present invention is:

Ti02、TiSr03、ZnO、Nb203、Sn02、W03、Si、CdS、CdSe、 V205、ZnS、ZnSe、SnSe、KTa03、FeS2 ' PbS、InP、GaAs、Ti02, TiSr03, ZnO, Nb203, Sn02, W03, Si, CdS, CdSe, V205, ZnS, ZnSe, SnSe, KTa03, FeS2 'PbS, InP, GaAs,

CuInSz、CuInSez等。該些中最佳的n型半導體為Ti〇2、 ZnO、Sn〇2、WO3以及Nb2〇3。另外,亦可較佳使用使多 種該些半導體複合而成的半導體材料。 半導體微粒22的製作法較佳為,作花濟夫的「溶膠_ 凝膠法的科學」Agne-Shofu公司( 1998年)等記載的凝膠 -溶膠法。另外,Degussa公司開發的將氯化物在酸氫鹽中 藉咼水解而製作氧化物的方法亦佳。半導體微粒為氧 化鈦時,上述溶膠-凝膠法、凝膠_溶膠法、氣化物在酸氫 鹽中的高溫水解法均佳,亦可使用清野學的「氧化鈦物 性與應用技術」(技報堂出版,1997年)記載的硫酸法及 氣法。另溶膠-凝膠法-較佳為:Barbe等於J〇urnal 〇f theCuInSz, CuInSez, and the like. The most preferred n-type semiconductors are Ti〇2, ZnO, Sn〇2, WO3, and Nb2〇3. Further, a semiconductor material obtained by compounding a plurality of such semiconductors can also be preferably used. The method for producing the semiconductor fine particles 22 is preferably a gel-sol method described in "The Science of Sol-Gel Method" by Agfa-Shofu Co., Ltd. (1998). In addition, a method developed by Degussa to produce an oxide by hydrolysis of a chloride in an acid hydrogen salt is also preferred. When the semiconductor fine particles are titanium oxide, the sol-gel method, the gel-sol method, and the high-temperature hydrolysis method of the vaporized acid in the acid hydrogen salt are all good, and the "titanium oxide property and application technology" of Kiyono can also be used. Published, 1997) The sulfuric acid method and gas method are described. Another sol-gel method - preferably: Barbe is equal to J〇urnal 〇f the

American Ceramic Society, Vol. 80, No.12, 3157〜3171 (1997) 記載的方法,或Burnside等於chemistry 〇f她,趾 10, No· 9, 2419〜2425記載的方法。 另關於半導體微粒的製造方法,例如二 子的製造方法較佳可例舉:四氣化欽火财 氯化鈦的燃燒法、穩定的硫屬化物錯合物的水解、正鈦酸 42 201238968 41468pif 的水解、 部分、容解部分形成半導體微粒後將可溶 P刀命解除去的方法、過氧化物水紐的水Μ 膝-凝膠法的核/殼結構的氧化欽微粒的製造方法口。^ 八化ϊ的結晶結構可例舉:銳鈦礦型、板鈦礦型或 孟、’工垔,較佳為銳鈦礦型、板鈦礦型。 一 化二_管、奈米線、奈米雜合於二氧 除摻雜可·^雜非金屬70素等。二氧化鈦中的添加劑 哎為防止^可使収善聯結(neeking)用的黏合劑, =二=!而在表面使用添加劑。添加劑的較 纖維素等纖維狀物質、金二、 十二,本姚、魏化合物等電荷遷移結合分子, 位傾斜型樹枝狀聚合物等。 射上的表面缺陷等’亦可在色素吸附前 對-氧化鈦狀驗或氧化還原處理。亦可 理、過氧化氫處理、脫氫處理、TTVftii軋化如 ⑼半導體錄她Γ u乳、氧綱處理。 可m方式獲得多孔f半導體微粒塗布層》 散液塗布於上述導電支樓體1上,並適 ,加旦此半導體微粒分散液中半導||微粒以外的固體成 '刀的3量為半導體微粒分散液總體的lGwt%以下。 製作^導體微粒分散液的方法除了前述溶勝_凝膠法 卜’可例舉.在合成半導體時在溶劑中以微粒形態析出而 43 201238968 « Vf 微粒照射超音波等而粉碎成超微粒的 =法,或使用研磨機或乳料進行機械粉碎並研散的方法 =。分散溶劑可使用水及各種有機溶劑中的—種以上。有 =劑可例舉:甲醇、乙醇、異丙醇、香㈣、松㈣等 _,丙崎_,乙酸乙醋等酸類,三氣甲烧,乙猜等。 分散時,亦可視需要使用少量的例如聚乙二醇、經基 ^基纖維素、誠甲基纖維素之類的聚合物、界面活性劑土、 i ’或^合解作為分散助劑。但在導電支撐體上進行製 膜步驟w ’較佳藉輯法或使用分離膜的方法或離心分離 法等,預先將該些分散助劑大部分除去。半導體微粒分散 ^半導It微粒以外賴體成分的含量可設為分散液總體 的10wt%以下,較佳5%以下,更佳3%以下,特佳1%以 下尤佳〇‘5°/°以下,最佳0.2°/ί&gt;。即,可將半導體彳崎极分 散液中溶賴半導龍粒以外_體成分設為分散液總體 的lOjvt%以下,較佳是實質僅含半導體微粒與分散溶劑。 盔1半導體微粒分散液黏度過高,則會使分散液凝聚而 無法製膜,反之,若分散液黏度過低,則會使液體流動而 無法製膜。因此’分散液的黏度較佳為在25。(:下為10〜300 N s/m2 ’ 更佳是在 25°C 下為 50〜200N.s/m2。 關於半導體微粒分散液的塗布方法,施用(application ) 系的方法可使用輥法、浸泡法等。另計量(metering)系 的方法可使用氣刀法、刀片法等。又,施用系方法與計量 系方法的共同方法較佳為:日本專利特公昭58-4589號揭 不的線棒法、美國專利2681294號說明書等記載的滑動漏 201238968 41468pif 塗布法、簾幕法等。又,使用通用機器以旋轉 法或喷減塗布的方法亦佳。濕式印刷方法較佳為^ 版、平版及凹版的3大印刷法為代表的凹版、橡膠版、= 版印刷等。Μ紐難m轉錢擇紐 3 法。又,本發明的半導體微粒分散犋方 故凝聚力強’在塗布時會林財撐體充&amp;合的=生’ 此情況下可藉UV魏處理進行表_清軸親水化兄使 所塗布的半㈣餘分散賴導f找體丨絲的接 增加,致使半導體微粒分散液的塗布容易進行。 力 半導體微粒層整體的較佳厚度為〇 ]〜1〇〇抑 1〜30/mi’尤佳為2〜25&quot;m。每i m2支樓體上料導體微 粒的承載量較佳為0.5〜400g,更佳為5〜1〇〇g。 政 為強化半導體微粒彼此的電子性接觸並提高與支 的密合性’且為使所塗布的半導體微粒分散液乾燥對 塗布層實施加熱處理,以形成多孔f半導體微粒層。· 另外,除了加熱處理外,亦可使用光能。例如 化鈦作為半導雖粒22時呵提供紫外光之類的半導體徽 粒22吸收的光総化表面,亦可藉詩光等僅將半導體微 粒22表面活化。對半導體微粒22照射其可吸收的光, 吸附於其表面的雜質因其表面活化而分解,即可成為對實 現上述目的*言較佳的狀態。組合加熱處理與紫外光時, 較佳是對轉體微粒22歸其吸㈣光,同時在⑽。C以 上250t以下或較佳1〇(rc以± 15〇ΐ以下加熱。如此,難 由對半導贿粒22進行光激發,可光分解清洗混入微 45 201238968 粒層内的雜質’並增強微粒之間的物理性接合。 /另外,將半導體微粒分散液塗布於上述導電支撐俨1 ^可=加^照光以'亦可進行其他處理。較“ 刀云j例舉.通電、化學性處理等。 塗布後亦可施加壓力,其方法可例舉日本專 2003-500857號公報等的。照光的例子可舉日本專利特 2〇〇1_357896號公報等的。電漿、微波、通電的例子可^ 日本專利特開加㈣洲3號公報等的。化學性處理例如 可舉日本專利特開2001-357896號公報的。 將上述半導體微粒22塗在導電支撐體丨上的方法,除 了上述將半導體微粒分散液塗布於導電支撐體1上的方法 外’可使用日本專利第2664194號公報記載的方法(將半 導體微粒22的前驅物塗布於導電支撐體丨上,並藉空氣中 的水分水解而得半導體微粒膜)等方法。 刖驅物可例舉:(Ni^hTiF6、過氧化鈦、金屬烷氧化 物-金屬錯合物-金屬有機酸鹽等。 另外可例舉:塗布共存有金屬有機氧化物(烷氧化物 等)的漿料,並藉加熱處理、光處理等形成半導體膜的方 法;對共存有無機系前驅物的漿料、漿料的pH值及已分 散的二氧化鈦粒子的性狀進行特別設定的方法。該些漿料 中,若為少量則亦可添加黏合劑,黏合劑可例舉:纖維素、 氟聚合物、父聯橡膠、聚鈦酸丁醋、敌基甲基纖維素等。 與半導體微粒22或其前驅物層的形成有關的技術可 例舉:藉由電暈放電、電漿、紫外光等物理性方法進行親 46 201238968 叫〇8pif 欠化的方法,藉由驗或聚乙烯二氧 的化學處理;聚苯胺等接合用中間膜 作為將半導體微粒22塗在導電支 =佳可例舉日本專利特開2_侧43號公(。)2 他方法較佳可例舉日本專利特開纖心你號公報( 亦了 Ϊ式法可娜m聽、氣觀等。另外, 亦可使用電泳法-電析法。 用在耐熱基板上暫時製作塗膜後,轉印至塑 的方法。較佳可日本料_祕雜5 二^載的經由乙參乙酸乙烯醋(EVA)轉印的方法; ^本專利制2003-98977號公報記_,在包含可藉紫外 系溶劑除去的無機鹽的犧牲基板上形成半導體層、 二後轉印至有機基板再將犧牲基板除去的方法等。 半導體微粒22為能吸附大量增感色素2卜較佳有大 ^面積。例如,在將半導體微粒U塗在導電支樓體i上的 情形下,其表面積相對於投影面積較佳為1〇倍以上,卿 倍以上更佳。上限無特別限制,通常約5000倍。半導體微 粒22的較佳結構例如日本專利特開2001-93591號公報等。 '、通吊,半導體微粒層的厚度愈大,單位面積可承載的 增感色素21的量愈多’故光吸收效率愈高,但所產生的電 ㈣擴散距離會增大,因此因電荷再結合所引起的損失亦 變大。半導體微粒層的較佳厚度因元件用途而異,典型為 (^^(^/^。用於光電化學電池時則較佳為卜刈一瓜,^% 47 201238968 muopif =更佳。半導韻㈣布於支碰上後,為使粒子彼此 役接’亦可在刚〜_。(:的溫度下加熱1〇分鐘〜1〇小時。 使用玻璃作為支撐料,伽溫度較佳為.6〇叱。 使用高分子材料為支樓體時,較佳在250t以下製膜 後加熱。此時的製膜方法可為(1)濕式法、(2)乾式法、⑶ 法(包括電析法)的任意一種,較佳為⑴濕式法或⑺ 乾式,更佳為(1)濕式法。 另外,每1 m支撐體上的半導體微粒22的塗布量為 0.5〜500 g ’ 5〜1〇〇 g 更佳。 為了使半導體微粒22酬增感色素21,較佳是在包 ^液與本發明的色素的色素吸_色素溶液巾將充分 乾燥的半導體丨錄22長時間浸泡。色素吸附用色素溶液所 用的溶劑只要可溶解本發明的增感色素2丨即可,使用無特 2制。如此’本發明中溶解金屬錯合物色素組成物的溶 劑為有機溶劑,可例舉:非極性溶劑、極性非質子性溶劑、 極性質子性溶劑、料性賴等,較佳可娜雜性溶劑、 極14非質子性溶劑、極性質子性溶劑為較佳對象,例如可 使用^醇、曱醇、異丙醇、曱苯、三級丁醇、乙腈、丙酮、 正丁醇、N,N-二曱基曱醯胺、N,N•二曱基乙醯胺等。其中, 可較佳使用乙醇、曱苯。 八 本發明中金屬錯合物色素組成物在上述溶劑中的溶解 度,在25。(:下較佳為100 mg/L以上,更佳為1〇5 mg/L以 上’特佳為110 mg/L以上。 包含溶劑與本發明的色素的色素吸附用色素溶液可視 48 201238968 HlHOOpif 而要加熱至50〜100¾。增感色素21的吸附可在半導體微 粒22的塗布前進行,亦可在塗布後進行。另外,亦可將半 導體微粒22與増感色素21同時塗布並吸附。未吸附的增 感色素21藉清洗除去。塗布膜需煅燒時,增感色素21的 吸附較佳在般燒後進行,特佳是在職後、水吸附於塗布 膜表面前快速吸附増感色素21。吸附的增感色素21可為 上述色素A1的1種,亦可更混合其他的色素。為儘可能 擴大光電轉換的波長區域,可選擇混合色素。在混合色素 時,較佳使所有色素溶解而製成色素吸附用色素溶液。 增感色素21的用量總體上對每1 m2支樓體,較佳為 0.01〜100毫莫耳’0,1〜5〇毫莫耳更佳,〇1〜1〇毫莫耳尤佳。 此時’本發明的增感色素21的用量較佳設為5莫耳%以上。 又,相對半導體微粒1 g,增感色素21在半導體微粒 22上的吸附量較佳為(^⑻丨〜丨毫莫耳,〇$毫莫耳更佳。 如此設定色素量即可充分獲得半導體的增感效果。相 對於此,若色素量少,則增感效果變得不足;若色素量過 夕’則未附著於半導體的色素浮動而使增感效果降低。 另外,為了降低締合等色素彼此的相互作用,可使無 色化合物共吸附。共吸附的疏水性化合物可例舉具羧基的 類固醇化合物(例如膽酸、特戊醯酸(pivaloyl acid))等。 在吸附增感色素21後,亦可使用胺類處理半導體微粒 22的表面。較佳的胺類可例舉4_三級丁基吡啶、聚乙烯吡 咬等。該些為液體時可直接用’亦可溶於有機溶劑而使用。 對電極4作為光電化學電池的正極。對極4通常與前 49 201238968 述導電支稽體1同義,在充分保持了強度的構成中,未必 需要對電極的支樓體’但具有支樓體時則在密閉性方面較 為有利。對電極4的材料可例舉:麵、碳、導電性聚合物 等。較佳例可舉:翻、碳、導電性聚合物。 對電極4的結構較佳為集電效果高的結構,其較佳例 可舉日本專利特開平10-505192號公報等。 受光電極5可使用氧化鈦與氧化錫(Ti〇2/Sn〇2)等的 j。電極’一氧化鈦的混合電極可例舉日本專利特開〇· 3913说么報等。一氧化鈦以外的混合電極可例舉:日本 專利特開細-18·號公報、期以編號公報等。 雷」外⑨光f賴70件的構成亦可具有:依序積層第1 ? 1光電轉換層、導電層、第2光電轉換層、第 =,層的結構:此時,第!與第2先電轉換層所用J Μ α ^ 5/不同所用色素不同時,較佳為吸收光譜不同。 创2電極5為了提高入射光的利用率等亦可形成串聯 89、日本專利特開臟·趣9號公報等所記载者。 射的光ίΪ^5的層内部亦可設置有效進行光散射、反 理舰,較佳可例舉··日本專 唬公報記載的功能。 力4/6 電支解液與電極直接接觸而引起的逆電流,導 層,其質半導體微粒層之間較佳形成防短路 為舉日蝴咖平G6_5_號公報等。 電極5與對電極4接觸’較佳使用間隔物 50 201238968 41468pif 或間,件,較佳例可舉日本專利特開麗以雙號公報。 士匕单7〇、模組的密封法較料:使用聚異丁稀系 熱硬化 曰4漆樹脂、光硬化性(甲基)丙婦_旨樹脂、環氧樹 脂:離子聚合物樹脂、麵粉、氧化料舰氧化紹的方 法,對低熔點玻璃㈣行雷恤融的方法等。使用玻璃粉 時’可將粉末玻觀合至作為黏合劑的丙烯酸系樹 [實例] 以下依貫例更β羊細地說明本發明,但本發明不限於此。 1.金屬錯合物色素的粗純化物的製備 藉由以下的(1)利用外部加熱的方法、(2)利用微波加熱 的方法,製備金屬錯合物的粗純化物,然後藉由2純化。 (1)利用外部加熱的金屬錯合物色素的粗純化物的製備 (a)金屬錯合物色素D-20的粗純化物的製備 利用以下所示的方法製備上述具體例所示的通式(]) 的金屬錯合物色素中的D-20的粗純化物。 &lt;配位子合成&gt; 1-庚炔 Pd2(dba)3 PPh3 d-1-1 d»1*-2 CsHnH C5Hiin d-V3The method described in American Ceramic Society, Vol. 80, No. 12, 3157~3171 (1997), or Burnside is equal to the method described by chemistry 她f her, toe 10, No. 9, 2419~2425. Further, as for the method for producing the semiconductor fine particles, for example, the method for producing the two-parts is preferably a four-gasification method of burning a titanium chloride, a hydrolysis of a stable chalcogenide complex, and an orthotitanic acid 42 201238968 41468pif. A method for producing a oxidized granule of a core/shell structure by hydrolyzing, partially or partially decomposing a semiconductor fine particle, and then removing a soluble P-knife. ^ The crystal structure of the arsenic can be exemplified by anatase type, brookite type or Meng, 'worker', preferably anatase type, brookite type. The second tube, the nanowire, and the nano-hybrid are dioxins, and the non-metal 70 is used. Additives in Titanium Dioxide 哎 In order to prevent the binder from being used for neeking, =2 =! Use additives on the surface. Additives are fibrous substances such as cellulose, gold II, 12, charge transfer bonding molecules such as Ben Yao and Wei compounds, and tilted dendrimers. The surface defects or the like on the shot may also be subjected to a titanium oxide test or a redox treatment before the dye adsorption. It can also be treated, hydrogen peroxide treatment, dehydrogenation treatment, TTVftii rolling, such as (9) semiconductor recording her Γ u milk, oxygen class treatment. The porous f-semiconductor fine particle coating layer can be obtained by the method of dispersing liquid on the above-mentioned conductive branch body 1, and the solid of the semi-conductive || fine particles in the semiconductor fine particle dispersion can be added into the semiconductor. The particulate dispersion is generally less than 1 Gwt%. The method for producing the conductive particle dispersion can be exemplified by the above-mentioned melt-gel method. In the case of synthesizing a semiconductor, it is precipitated as a fine particle in a solvent and is smashed into ultrafine particles by the irradiation of ultrasonic waves, etc. Method, or mechanical pulverization and grinding using a grinder or a latex =. As the dispersing solvent, one or more of water and various organic solvents can be used. There are = agents can be exemplified: methanol, ethanol, isopropanol, fragrant (four), pine (four), etc. _, Azaki _, acetic acid and other acids, three gas A, B guess. When dispersing, a small amount of a polymer such as polyethylene glycol, a base-based cellulose, or a methyl cellulose, a surfactant, an i' or a solution may be used as a dispersing aid. However, most of the dispersing aids are removed in advance by performing a film forming step w' on a conductive support or a method using a separation membrane or a centrifugal separation method. The semiconductor fine particle dispersion / semi-conductive It fine particles may be contained in an amount of 10% by weight or less, preferably 5% or less, more preferably 3% or less, particularly preferably 1% or less, particularly preferably 5% '5°/°. Below, the best 0.2 ° / ί &gt;. In other words, the semiconductor component of the semiconductor sakisaki dispersant may be less than 10% by weight of the entire dispersion liquid, and preferably contains only semiconductor fine particles and a dispersion solvent. If the viscosity of the semiconductor particle dispersion of the helmet 1 is too high, the dispersion will be agglomerated and the film cannot be formed. Conversely, if the viscosity of the dispersion is too low, the liquid will flow and the film cannot be formed. Therefore, the viscosity of the dispersion is preferably at 25. (The following is 10 to 300 N s/m2'. More preferably, it is 50 to 200 N.s/m2 at 25 ° C. Regarding the method of applying the semiconductor fine particle dispersion, the method of applying the method can be carried out by using a roll method, The immersion method, etc. The method of metering can use the air knife method, the blade method, etc. Further, the common method of the application method and the metering method is preferably: the line disclosed by Japanese Patent Publication No. Sho 58-4589 The sliding method 201238968 41468pif coating method, the curtain method, etc. described in the bar method, the specification of the U.S. Patent No. 2,681,294, etc. Further, it is preferable to use a general-purpose machine by a spin method or a spray coating method. The wet printing method is preferably a plate type, The three printing methods of lithographic and gravure are representative of gravure, rubber plate, = plate printing, etc. The new semiconductor film of the present invention has a strong cohesive force. Lincai support body & combined = raw 'In this case, you can use UV Wei treatment to make a table _ clear axis hydrophilic brother to make the coated half (four) residual dispersion lai lead f to find the body of the wire to increase, resulting in semiconductor particles The coating of the dispersion is easy to carry out. The preferred thickness of the granule layer is 〇]~1 〇〇1~30/mi' is preferably 2~25&quot;m. The carrying capacity of the conductor particles per i m2 branch body is preferably 0.5~400g, More preferably, it is 5 to 1 〇〇 g. The chemistry is to strengthen the electronic contact between the semiconductor fine particles and improve the adhesion to the branch ′ and to heat the coated layer to dry the coated semiconductor fine particle dispersion to form a porous f semiconductor fine particle layer. · In addition, in addition to heat treatment, light energy can also be used. For example, titanium can be used as a semi-conductive photo-deposited surface that absorbs semiconductor light particles 22 such as ultraviolet light. The surface of the semiconductor fine particles 22 is activated only by the light of the light, etc. The semiconductor fine particles 22 are irradiated with light that can be absorbed, and the impurities adsorbed on the surface of the semiconductor fine particles 22 are decomposed by activation of the surface thereof, which is a state in which the above object can be achieved. In the case of heat treatment and ultraviolet light, it is preferred that the rotating particles 22 are attracted to (four) light, and at the same time (10) C or more and 250 t or less or preferably 1 〇 (rc is heated to ± 15 〇ΐ or less. The briquette 22 is photoexcited and can be photo-decomposed and cleaned. Micro-45 201438968 Impurities in the grain layer 'and enhance the physical bonding between the particles. / In addition, the semiconductor fine particle dispersion is applied to the above-mentioned conductive support 俨 1 ^ can be added to the light to 'can be other treatment. For example, Japanese Patent Laid-Open Publication No. 2003-500857, etc., for example, Japanese Patent Publication No. JP-A No. Hei. Examples of the plasma, the microwave, and the electric current can be obtained by the Japanese Patent Laid-Open No. (4), and the like. For the chemical treatment, for example, JP-A-2001-357896 can be cited. In the method of applying the semiconductor fine particles 22 to the conductive support 丨, in addition to the above method of applying the semiconductor fine particle dispersion to the conductive support 1, the method described in Japanese Patent No. 2664194 (using the semiconductor fine particles 22) can be used. A method in which a precursor is coated on a conductive support crucible and hydrolyzed by moisture in the air to obtain a semiconductor fine particle film). The hydrazine can be exemplified by (Ni^hTiF6, titanium peroxide, metal alkoxide-metal complex-metal organic acid salt, etc. Further, a metal organic oxide (alkoxide, etc.) coexisted by coating may be mentioned. A method of forming a semiconductor film by heat treatment or light treatment, and a method of setting a pH of a slurry, a slurry, and a property of dispersed titanium oxide particles in which an inorganic precursor is present. In the slurry, if it is a small amount, a binder may be added, and the binder may, for example, be cellulose, fluoropolymer, parent rubber, polybutyl titanate, dimethyl cellulose, etc. with the semiconductor particles 22 or The technique related to the formation of the precursor layer can be exemplified by a physical method such as corona discharge, plasma, ultraviolet light, etc., which is a method of 〇8pif under-reduction, by means of chemistry or polyethylene dioxygen chemistry. The intermediate film for bonding such as polyaniline is used as the conductive film for coating the semiconductor fine particles 22. It is preferable to exemplify the Japanese Patent Laid-Open No. 4-No. 43 (2). Your bulletin (also the 法法法可娜m listen In addition, it is also possible to use electrophoresis-electrolytic method. It is a method of temporarily producing a coating film on a heat-resistant substrate and transferring it to a plastic. It is preferably a Japanese material. Method for transferring vinyl acetate vinegar (EVA); ^ Patent Publication No. 2003-98977, for forming a semiconductor layer on a sacrificial substrate containing an inorganic salt removable by an ultraviolet solvent, and then transferring the organic layer to the organic substrate A method of removing a sacrificial substrate, etc. The semiconductor fine particles 22 are preferably capable of adsorbing a large amount of sensitizing dyes. For example, in the case where the semiconductor fine particles U are coated on the conductive branch body i, the surface area thereof is relatively The projected area is preferably 1 〇 or more, more preferably 倍倍 or more. The upper limit is not particularly limited, and is usually about 5000 times. A preferred structure of the semiconductor fine particles 22 is, for example, Japanese Patent Laid-Open Publication No. 2001-93591, etc. The larger the thickness of the semiconductor fine particle layer, the more the amount of the sensitizing dye 21 that can be carried per unit area, so the higher the light absorption efficiency, but the generated electric (four) diffusion distance increases, and thus the loss due to charge recombination. Also getting bigger. Half The preferred thickness of the conductor particle layer varies depending on the use of the component, and is typically (^^(^/^. When used in a photoelectrochemical cell, it is preferably a dip, a melon 47 201238968 muopif = better. Semi-conducting rhyme (4) After the cloth is placed on the support, in order to make the particles mate with each other, it can also be heated at a temperature of just ~~. (:: 1 minute~1〇 hour. Using glass as a support material, the gamma temperature is preferably .6〇使用 When the polymer material is used as the branch body, it is preferably heated after film formation below 250t. The film forming method at this time may be (1) wet method, (2) dry method, (3) method (including electrolysis method). Any one of them is preferably (1) wet method or (7) dry type, more preferably (1) wet method. Further, the coating amount of the semiconductor fine particles 22 per 1 m of support is 0.5 to 500 g '5 to 1 〇〇g is better. In order to make the semiconductor fine particles 22 sensitize the dye 21, it is preferable to soak the semiconductor film 22 which is sufficiently dried in the coating liquid and the dye-dye solution of the dye of the present invention for a long time. The solvent used for the dye solution for dye adsorption can be used as long as it can dissolve the sensitizing dye 2 of the present invention. Thus, the solvent for dissolving the metal complex dye composition in the present invention is an organic solvent, and examples thereof include a nonpolar solvent, a polar aprotic solvent, a polar protic solvent, a material, and the like. Solvents, polar 14 aprotic solvents, polar protic solvents are preferred, for example, alcohol, decyl alcohol, isopropanol, toluene, tertiary butanol, acetonitrile, acetone, n-butanol, N, N-dimercaptoamine, N,N•dimercaptoacetamide, and the like. Among them, ethanol and toluene can be preferably used. The solubility of the metal complex pigment composition in the above solvent in the above invention is 25. (: Preferably, it is 100 mg/L or more, more preferably 1〇5 mg/L or more, and particularly preferably 110 mg/L or more. The pigment solution for dye adsorption containing the solvent and the pigment of the present invention can be seen as 48 201238968 HlHOOpif The adsorption of the sensitizing dye 21 may be performed before the application of the semiconductor fine particles 22, or may be performed after the application. Further, the semiconductor fine particles 22 may be simultaneously coated and adsorbed with the sensitizing dye 21. The sensitizing dye 21 is removed by washing. When the coating film is to be calcined, the adsorption of the sensitizing dye 21 is preferably carried out after the calcination, and it is particularly preferable to rapidly adsorb the sensitizing dye 21 before the water is adsorbed on the surface of the coating film. The sensitizing dye 21 may be one type of the above-mentioned dye A1, and may be further mixed with other dyes. In order to increase the wavelength range of photoelectric conversion as much as possible, a mixed dye may be selected. When the dye is mixed, it is preferred to dissolve all the pigments. The pigment solution for pigmentation adsorption. The amount of the sensitizing dye 21 is generally 0.01 to 100 millimoles per 1 m2 of the building body, preferably 0 to 1 to 5 millimoles, and 1 to 1 inch. It is especially good at this time. The amount of the sensitizing dye 21 is preferably set to 5 mol% or more. Further, the amount of the sensitizing dye 21 adsorbed on the semiconductor fine particles 22 is preferably (^(8) 丨 丨 莫 莫 〇 〇 The sensitizing effect of the semiconductor can be sufficiently obtained by setting the amount of the dye in this way. On the other hand, if the amount of the pigment is small, the sensitizing effect is insufficient, and if the amount of the pigment is too long, the pigment is not attached to the semiconductor. In addition, in order to reduce the interaction between the dyes such as association, the colorless compound may be co-adsorbed. The co-adsorbed hydrophobic compound may, for example, be a steroid compound having a carboxyl group (e.g., bile acid, pivalate) Pivaloyl acid, etc. After the sensitizing dye 21 is adsorbed, the surface of the semiconductor fine particles 22 may be treated with an amine. Preferred amines may, for example, be 4-tributylpyridine or polyvinylpyridin. When these are liquids, they can be used directly as 'soluble in organic solvents. Counter electrode 4 is used as the positive electrode of photoelectrochemical cell. Counter electrode 4 is generally synonymous with the conductive checker 1 of the previous 49 201238968, and the strength is fully maintained. In the composition, The support body of the counter electrode is not necessarily required, but it is advantageous in terms of airtightness when it has a branch body. The material of the counter electrode 4 may be, for example, a surface, carbon, a conductive polymer, etc. Carbon and a conductive polymer. The structure of the counter electrode 4 is preferably a structure having a high current collecting effect, and a preferred example thereof is exemplified by Japanese Patent Laid-Open No. Hei 10-505192, etc. The light-receiving electrode 5 can be made of titanium oxide and tin oxide ( In the case of the mixed electrode of the electrode of the titanium oxide, such as Ti〇2/Sn〇2), etc., the mixed electrode of the titanium oxide can be exemplified by Japanese Patent Laid-Open No. 3913, etc. The mixed electrode other than titanium oxide can be exemplified by: Japanese Patent Laid-Open Bulletin No. -18., issue number bulletin, etc. It is also possible to have a structure in which the first light-emitting layer of the first light-emitting layer, the conductive layer, the second photoelectric conversion layer, and the second layer are formed in this order: at this time, the first! When the dye used differs from the J Μ α ^ 5/ used in the second electroconversion layer, the absorption spectrum is preferably different. The creator 2 electrode 5 can also be formed in series in order to increase the utilization of incident light, etc., as described in Japanese Patent Laid-Open Publication No. 9 and the like. In the layer of the light illuminating ^5, it is also possible to provide effective light scattering and anti-shipping, and it is preferable to exemplify the functions described in the Japanese Patent Publication. The reverse current caused by the direct contact of the force 4/6 electrolysis solution with the electrode, and the conductive layer between the conductive layer and the thin layer of the semiconductor layer are preferably formed to prevent short-circuiting, such as the Japanese version of G6_5_. The electrode 5 is in contact with the counter electrode 4. It is preferable to use a spacer 50 201238968 41468pif or a member, and a preferred example is a Japanese Patent Application Laid-Open No. 2 publication. Gynecological single 7〇, module sealing method compares: use polyisobutylene heat curing 曰4 lacquer resin, photocurable (methyl) propylene women's resin, epoxy resin: ionic polymer resin, flour The method of oxidation of the oxidized material ship, the method of melting the low-melting glass (four) and the like. When glass frit is used, the powder can be glassy to the acrylic tree as a binder. [Examples] Hereinafter, the present invention will be described in detail by way of example, but the present invention is not limited thereto. 1. Preparation of crude purified product of metal complex pigment The crude purified product of the metal complex is prepared by the following method (1) by external heating, (2) by microwave heating, and then purified by 2 . (1) Preparation of crude purified product of externally heated metal complex dye (a) Preparation of crude purified product of metal complex dye D-20 The general formula shown in the above specific example was prepared by the method shown below. A crude purified product of D-20 in the metal complex dye of (]). &lt;Coordination Synthesis&gt; 1-Heptyne Pd2(dba)3 PPh3 d-1-1 d»1*-2 CsHnH C5Hiin d-V3

CsHunCsH^nCsHunCsH^n

51 201238968t &lt;錯合物化51 201238968t &lt;complexation

&lt;配位基合成&gt; ⑴化合物d-1-2的製備 將 25 g 的 d-M、3.8 g 的 pd2(dba)3、8 6 g 三苯基膦、 2/ g碘化銅、25.2 g 1-庚炔在7〇mL三乙基胺、5〇mL四 氫呋喃中在室溫下攪拌,再於8〇〇c下攪拌4 5小時。濃縮 後以官柱層析法純化,而得化合物264g的d_12。 (ii)d-l-4的製備 运將6.7 g的cM-3在氮氣環境、_15°c下溶於2〇〇mL四 氫呋喃(THF)中,相對於d-l-3滴加2.5當量的另行調整 的二異丙基醯胺鋰(LDA),攪拌75分鐘。然後滴加將15 g的d-1-2溶於30 mLTHF所得溶液,在〇〇c下攪拌卜j、時, 再於室溫下攪拌整夜。濃縮後添加 150 mL 水,用 150 mL 二氣曱烧分液、萃取’以鹽水清洗有機層,並將有機層濃 縮。所得的結晶以曱醇再結晶,而得18.9g的d-1-4。 52 201238968 41468pif (iii)化合物d-1-5的製備· 將13.2 g的d-l-4、1 7 g ppTS (對曱苯續酸0比咬鏽) 添入1000 mL甲苯,在氮氣環境下加熱迴流5小時。濃縮 後以飽和碳酸氫鈉水溶液及二氯甲烷分液,濃縮有機層, 將所得結晶以甲醇及二氣甲烷再結晶而得u 7g的d—U。 &lt;錯合物化&gt; 藉外部加熱錯合物化,而製備金屬錯合物色素D-20。 將以上合成的3 〇g的d-1 -5、1.64g的d-1 -6添入35 mL DMF (二甲基曱醯胺)中,在暗室中7〇〇c下攪拌9〇分鐘。此 時自外部藉油浴加熱。然後添加1.3g的d-1-7,並添加270 mL DMF ’在i6(TC下加熱攪拌uo分鐘。此時自外部藉油 浴加熱。然後添加u.25g硫氰酸銨並在1;3(rc下攪拌^小 時。此時自外部藉油浴加熱。濃縮後添加3〇〇 mL水進广 過濾,以二乙醚清洗,而得D_2〇的粗純化物。 (b)金屬錯合物色素D-i〇的粗純化物的製備 用以下所示的方法製備上述具體例所示的通 金屬錯合物色素中的D-10的粗純化物。 、 &lt;配位基合成&gt; 藉由以下方法製備化合物d-2-5。 (i)化合物d-2-2的製備 將25 g的d_2-l溶於50〇 mL THF並以冰浴冷卻 當量的正丁紐(h6 mQl/L己贿液)。然後滴加 1.5 *置的二甲基甲醯胺,在室溫下攪拌〗小時。滴加 和氯化銨水溶液,並進行分液、萃取。濃縮後_減壓^ 53 201238968, 镏進行純化,而得化合物25.6 g的d-2-2。 (ii) d-2-4的製備 在製備(a)的金屬錯合物色素D-20時,將製備d-1-4所 用的d-1-2換成d_2-2,以相同方式使用d-2-3製備d-2-4。 (iii) 化合物d-2-5的製備 在製備⑷的金屬錯合物色素D-20時,將製備d-1-5所 用的d-1-4變更為d-2-4,此外,以相同的方式製備d-2-5。 &lt;錯合物化&gt; 藉外部加熱錯合物化,而製備金屬錯合物色素D-10 的粗純化物。 將(a)中製備D-20時所使用的d-1-5換成d-2-5,除此 以外,以相同的方式製備D-10的粗純化物。 nBuLi CeH,S^ —CeH^CHO d-2-1 d-2-2 d-2-3&lt;ligand synthesis&gt; (1) Preparation of compound d-1-2 25 g of dM, 3.8 g of pd2 (dba) 3, 8 6 g of triphenylphosphine, 2/g of copper iodide, 25.2 g of 1 The heptyne was stirred at room temperature in 7 mL of triethylamine, 5 mL of tetrahydrofuran, and stirred at 8 ° C for 45 hours. After concentration, it was purified by column chromatography to give 264 g of compound d. (ii) Preparation of dl-4 6.7 g of cM-3 was dissolved in 2 mL of tetrahydrofuran (THF) under nitrogen atmosphere at -15 ° C, and 2.5 equivalents of separately adjusted two were added dropwise to dl-3. Lithium isopropyl amide (LDA), stirred for 75 minutes. Then, a solution obtained by dissolving 15 g of d-1-2 in 30 mL of THF was added dropwise, and the mixture was stirred at 〇〇c, and then stirred at room temperature overnight. After concentration, 150 mL of water was added, and the organic layer was washed with brine, and the organic layer was concentrated with 150 mL of dioxane. The obtained crystal was recrystallized from decyl alcohol to give 18.9 g of d-1-4. 52 201238968 41468pif (iii) Preparation of compound d-1-5 · Add 13.2 g of dl-4, 17 g ppTS (p-benzoic acid 0 to bite rust) to 1000 mL of toluene and heat to reflux under nitrogen atmosphere 5 hours. After concentration, the organic layer was concentrated with a saturated aqueous solution of sodium bicarbonate and dichloromethane. The crystals were recrystallized from methanol and m. &lt;Compounding&gt; The metal complex dye D-20 was prepared by external heating and complexation. 3 〇g of d-1 -5 and 1.64 g of d-1 -6 synthesized above were added to 35 mL of DMF (dimethyl decylamine), and stirred at 7 ° C for 9 minutes in a dark room. At this time, it is heated from the outside by an oil bath. Then add 1.3g of d-1-7 and add 270 mL of DMF 'heated for uo minutes under i6 (TC). At this time, heat from the external oil bath. Then add u.25g ammonium thiocyanate and at 1;3 (The mixture was stirred for 2 hours at rc. At this time, it was heated from the outside by an oil bath. After concentration, 3 mL of water was added and filtered, and washed with diethyl ether to obtain a crude purified product of D 2 oxime. (b) Metal complex pigment Preparation of crude purified product of Di〇 The crude purified product of D-10 in the pass metal complex dye shown in the above specific example was prepared by the method shown below. &lt;Coordination Synthesis&gt; By the following method Preparation of compound d-2-5. (i) Preparation of compound d-2-2 25 g of d_2-1 was dissolved in 50 mL of THF and the equivalent of n-butyl (H6 mQl/L) was cooled in an ice bath. Then, 1.5* of dimethylformamide was added dropwise, and the mixture was stirred at room temperature for one hour. The aqueous solution of ammonium chloride was added dropwise, and the liquid separation and extraction were carried out. After concentration, the pressure was reduced to 53. Purification gave 25.6 g of compound d-2-2. (ii) Preparation of d-2-4 In the preparation of the metal complex dye D-20 of (a), the d used for the preparation of d-1-4 -1-2 is replaced by d_2-2, the same Preparation of d-2-4 using d-2-3. (iii) Preparation of compound d-2-5 In the preparation of the metal complex dye D-20 of (4), d- used for the preparation of d-1-5 1-4 was changed to d-2-4, and d-2-5 was prepared in the same manner. &lt;Compounding&gt; The complexation of the metal complex dye D-10 was prepared by external heating. Purified product: The crude purified product of D-10 was prepared in the same manner except that d-1-5 used in the preparation of D-20 in (a) was replaced by d-2-5. nBuLi CeH, S ^—CeH^CHO d-2-1 d-2-2 d-2-3

C6H13 CeH”C6H13 CeH”

CeH13CeH13

54 201238968 41468pif r n用微波加熱的金屬錯合物色素的粗純化物的製備 ⑷至屬錯合物色素D-20的粗純化物的製備 ,3,0 g化合物 d-1_5 與 i.64 g 的 d-1-6 加入 35mL DMF ν Λ曰至中照微波(頻率2.45GHz)並在70°C下擾拌10 =…遷加1.3 g的d-1-7,並添加270 mL DMF,藉上 ^波在16°°C下加熱龄分鐘。紐加14.25 g硫氰 藉上述微波在13〇°c下攪拌1〇分鐘。濃縮後添加3⑻ m水再過濾,並以二乙醚清洗,而得粗純化物〇_2〇。 (b)金屬錯合物色素D1〇的粗純化物的製備 _將的外部加熱改成微波加熱(條件與(2)(a)相 同),此外,以相同方式獲得2.5§的〇_1〇的粗純化物。 2.含通式(5)的金屬錯合物色素及/或通式(6)的金屬錯合物 色素的金屬錯合物色素組成物及金屬錯合物色素的製備 ⑴利用外部加熱的金屬錯合物色素組成物的製備 一 1·將(l)(a)所得金屬錯合物色素D-20的粗純化物與氫 氧化四丁基銨(TBAOH )—起溶於甲醇溶液中,以Sephadex LH-20 (GE Healthcare公司製商品名)管柱純化。將主層 的餾分回收並濃縮後加硝酸〇.2 M而得沈澱物。過濾後以 水及二乙醚清洗,而得以D-17為主成分的包含通式(5)的 金屬錯合物色素及通式(6)的金屬錯合物色素中至少丨種的 金屬錯合物色素組成物。管桎純化時,對2〇〇 mg粗純化 物使用50 g的載液,將實施管柱純化的次數改成i〜4次, 而得包含通式(5)的金屬錯合物色素及通式(6)的金屬錯合 物色素中至少1種的金屬錯合物色素組成物(實例^4)。 55 20123896854 201238968 41468pif rn Preparation of crude purified product of microwave-fused metal complex pigment (4) Preparation of crude purified product of complex dye D-20, 3,0 g of compound d-1_5 and i.64 g D-1-6 Add 35mL DMF ν Λ曰 to Zhongzhao microwave (frequency 2.45GHz) and stir at 10°C at 10°C. Add 1.3 g of d-1-7 and add 270 mL DMF. ^ Waves are heated at 16 ° C for a few minutes. Niigata 14.25 g thiocyanide was stirred by the above microwave at 13 ° C for 1 。. After concentration, 3 (8) m of water was added and filtered, and the mixture was washed with diethyl ether to give a crude purified product. (b) Preparation of crude purified product of metal complex dye D1 _ - external heating was changed to microwave heating (conditions are the same as (2) (a)), and in addition, 2.5 § 〇_1 获得 was obtained in the same manner. Crude purified material. 2. Preparation of a metal complex dye composition containing a metal complex dye of the formula (5) and/or a metal complex dye of the formula (6) and a metal complex dye (1) Metal using external heating Preparation of complex pigment composition -1. The crude purified product of the metal complex dye D-20 obtained in (l) (a) is dissolved in a methanol solution with tetrabutylammonium hydroxide (TBAOH). Column purification of Sephadex LH-20 (trade name manufactured by GE Healthcare). The fraction of the main layer was recovered and concentrated, and then cerium nitrate was added to obtain a precipitate. After filtration, it is washed with water and diethyl ether, and the metal complex dye containing the general formula (5) and the metal complex dye of the general formula (6) having D-17 as a main component are mismatched. Pigment composition. When purifying the tube, 50 g of the carrier liquid is used for 2 〇〇mg of the crude purified product, and the number of times of performing the column purification is changed to i to 4 times, and the metal complex dye containing the general formula (5) is obtained. At least one metal complex dye composition of the metal complex dye of the formula (6) (Example 4). 55 201238968

I 以相同方法純化(1)(的所得的金屬錯合物色素D_10的 粗純化物,而得以D_u為主成分的包含通式(5)的金屬錯 合物色素及通式(6)的金屬錯合物色素中至少1種的金屬錯 合物色素組成物(實例5〜8)。另外,將所得金屬錯合物色 素組成物進一步與氫氧化四丁基銨一起溶於曱醇溶液,滴 加0.1 N硝酸曱醇溶液至pH=〇,而得以D1〇為主成分的 包含通式(5)的金屬錯合物色素及通式(6)的金屬錯合物色 素中至少1種的金屬錯合物色素組成物(實例9〜12)。 (2) 利用微波加熱的金屬錯合物色素組成物的製備 為與(1)比較,以與(1)相同的方法純化1(2)(a)所得的 以微波加熱製備的金屬錯合物色素D_2〇的粗純化物,而 得以CM7為主成分的包含通式(5)的金屬錯合物色素及通 式(6)的金屬錯合物色素中至少1種的金屬錯合物色素組成 物(比較例1〜3)。另外,以相同方法純化丨所得的 金屬錯合物色素D-10的粗純化物,而得以d—u為主成分 的包含通式(5)的金屬錯合物色素及通式(6)的金屬錯合物 色素中至少1種的金屬錯合物色素組成物(比較例5〜7)。 另外,將所得金屬錯合物色素組成物進一步與氫氧化四丁 基敍一起溶於曱醇溶液,滴加N的硝酸曱醇溶液直至 PH=0,而得以D-10為主成分的包含通式(5)的金屬錯合物 色素及通式(6)的金屬錯合物色素中至少丨種的金屬錯合物 色素組成物(比較例9〜11)。 (3) 利用HPLC分取來製備金屬錯合物色素 以HPLC純化1.⑴⑷所得粗純化物’其先在氫氧化四 56 201238968 41468pif 丁基銨的曱醇溶液中溶解粗純化物,再用資生堂製CapceU Pak UG120匈〇 mmx25〇 mm的LC分取用管柱純化溶離 液組成設為甲醇/水==85/15〜95/5。將主層的分部回收並濃縮 後加0.2 Μ硝酸而得沈澱物。過濾後以水及二乙醚清洗, 而得3.2 g的通式(1)所示金屬錯合物色素D-17(比較例4)。 所得金屬錯合物色素D-17的結構以核磁共振(NMR) 測定及液相層析-質譜(LC-MS)進行確認。 b-NMRpMSO-d6、働 MHz):芳香族區 5 (ppm): 9.37 (1H, d), 9.11 (1H, d), 9.04 (1H, s), 8.89 (2H), 8.74 (1H, s), 8.26 (1H, d), 8.10-7.98 (2H), 7.85-7.73 (2H), 7.60 (1H, d)? 7.45-7.33 (2H), 7.33-7.12 (5H, m), 6.92 (1H, d) MS-ESI m/z : 1023.143 (M+H)+ 將所得金屬錯合物色素D-17 (比較例8)溶於四氫咬 喃:水=63 : 37 (0.1%三氟乙酸)中’製備濃度8 5 μιη〇1/[ 的溶液,使用U-4100 spectrophotometer(日立公司製商品) 進行分光吸收測量,結果吸收極大波長為568 nm。 同樣地,金屬錯合物色素D-11 (比較例8)亦使用 LU)(b)所得的粗純化物,以HPLC純化而得。 MS-ESI m/z : 1003.2 (M+H)+ 然後’溶於THF:水=63:37 (0.1%三氟乙酸)以製備濃 度 8.5 μιηοΙ/L 的溶液,用 U-4100spectroph〇t〇meter (日立 公司製)進行分光吸收測量,結果吸收極大波長為566 nm。 將所得金屬錯合物色素D-11與氫氧化四丁基銨一起 溶於曱醇溶液,滴加0.1 N硝酸曱醇溶液直至pH=〇,而獲 57 201238968t Τ Λ I v/w L/li- 得D-10 (比較例12)。 MS-ESI m/z : 1003.2 (M+H)+ 然後’溶於THF:水=63:37 (0.1%三氟乙酸)以製備濃 度 8.5 μιηοΙ/L 的溶液’用 U-4100spectrophotometer (日立 公司製)進行分光吸收測量,結果吸收極大波長為571 nm。 3·金屬錯合物組成物中的通式(5)的金屬錯合物色素及/或 通式(6)的金屬錯合物色素的含有率的測量 根據以下(a)〜(b)鑑定2.所得金屬錯合物色素組成物中 所含的金屬錯合物色素’並求出其含有率,其值示於表1。 (a)高效液相層析法的測量 依以下條件對2.所得金屬錯合物色素組成物作HPLC 測量。通式(5)的金屬錯合物色素及/或通式(6)的金屬錯合 物色素的含有比例,與後述的LC-MS測量結果一起,藉 由鑑定具有CN配位基的金屬錯合物而求出。 (高效液相層析法(HPLC)的測定條件)I (1) (the crude purified product of the obtained metal complex dye D_10 is purified in the same manner, and the metal complex dye of the formula (5) and the metal of the formula (6) having D_u as a main component are obtained. At least one metal complex dye composition of the complex dye (Examples 5 to 8). Further, the obtained metal complex dye composition is further dissolved in a decyl alcohol solution together with tetrabutylammonium hydroxide. Adding 0.1 N ceric nitrate solution to pH=〇, and obtaining at least one metal of the metal complex dye of the formula (5) and the metal complex dye of the formula (6) having D1〇 as a main component The complex pigment composition (Examples 9 to 12). (2) Preparation of the metal complex dye composition by microwave heating is compared with (1), and 1(2) is purified in the same manner as (1) ( a) a crude purified product of the obtained metal complex dye D 2 制备 prepared by microwave heating, and a metal complex dye containing the general formula (5) and a metal of the general formula (6) which are mainly composed of CM7 At least one metal complex dye composition of the material dyes (Comparative Examples 1 to 3). Further, the metal obtained by purifying the ruthenium in the same manner is entangled. a crude product of the dye D-10, and at least one of the metal complex dye containing the formula (5) and the metal complex dye of the formula (6) having d-u as a main component The pigment composition (Comparative Examples 5 to 7). Further, the obtained metal complex dye composition was further dissolved in a decyl alcohol solution together with tetrabutyl hydride, and a N ceric nitrate solution was added dropwise until PH = a metal complex dye composition containing at least a metal complex compound of the formula (5) and a metal complex dye of the formula (6) having D-10 as a main component (Comparative Example) 9~11). (3) Preparation of metal complex pigment by HPLC fractionation. Purification by HPLC 1. (1) (4) The crude purified product was firstly dissolved in a decyl alcohol solution of sulphuric acid tetra 56 201238968 41468pif butylammonium. And then use the Shiseido CapceU Pak UG120 Hungarian mmx25〇mm LC fractionation column purification solvent composition to set methanol / water == 85 / 15 ~ 95 / 5. After the main layer of the fraction is recovered and concentrated A precipitate was obtained by adding 0.2 hydrazine nitrate, and after filtration, it was washed with water and diethyl ether to obtain 3.2 g of a metal complex dye D represented by the general formula (1). -17 (Comparative Example 4) The structure of the obtained metal complex dye D-17 was confirmed by nuclear magnetic resonance (NMR) measurement and liquid chromatography-mass spectrometry (LC-MS). b-NMR pMSO-d6, 働MHz) : Aromatic zone 5 (ppm): 9.37 (1H, d), 9.11 (1H, d), 9.04 (1H, s), 8.89 (2H), 8.74 (1H, s), 8.26 (1H, d), 8.10 -7.98 (2H), 7.85-7.73 (2H), 7.60 (1H, d)? 7.45-7.33 (2H), 7.33-7.12 (5H, m), 6.92 (1H, d) MS-ESI m/z : 1023.143 (M+H)+ The obtained metal complex dye D-17 (Comparative Example 8) was dissolved in tetrahydrocarbamate: water = 63:37 (0.1% trifluoroacetic acid) to prepare a concentration of 8 5 μιη〇1/ [The solution was measured by spectroscopic absorption using a U-4100 spectrophotometer (product manufactured by Hitachi, Ltd.), and the absorption maximum wavelength was 568 nm. Similarly, the metal complex dye D-11 (Comparative Example 8) was also purified by HPLC using the crude purified product obtained from LU) (b). MS-ESI m/z: 1003.2 (M+H)+ then 'dissolved in THF: water=63:37 (0.1% trifluoroacetic acid) to prepare a solution of 8.5 μιηοΙ/L, using U-4100spectroph〇t〇meter (manufactured by Hitachi, Ltd.) The spectral absorption measurement was carried out, and the absorption maximum wavelength was 566 nm. The obtained metal complex dye D-11 was dissolved in a decyl alcohol solution together with tetrabutylammonium hydroxide, and 0.1 N ceric nitrate solution was added dropwise until pH=〇, and 57 201238968 t Τ Λ I v/w L/li was obtained. - D-10 (Comparative Example 12). MS-ESI m/z: 1003.2 (M+H)+ then 'dissolved in THF:water=63:37 (0.1% trifluoroacetic acid) to prepare a solution of concentration 8.5 μιηοΙ/L' U-4100 spectrophotometer (manufactured by Hitachi, Ltd.) The spectroscopic absorption measurement was carried out, and the absorption maximum wavelength was 571 nm. 3. Measurement of the content ratio of the metal complex dye of the formula (5) and/or the metal complex dye of the formula (6) in the metal complex composition according to the following (a) to (b) 2. The metal complex dye ' contained in the obtained metal complex dye composition was determined and its content was determined. The values are shown in Table 1. (a) Measurement by high performance liquid chromatography The obtained metal complex pigment composition was subjected to HPLC measurement under the following conditions. The content ratio of the metal complex dye of the formula (5) and/or the metal complex dye of the formula (6), together with the LC-MS measurement results described later, is identified by identifying a metal complex having a CN ligand. The compound was obtained. (Measurement conditions for high performance liquid chromatography (HPLC))

使用設備:系統控制器SCL-10AVP 管柱烘箱CTO-10ASVP 檢測器 SPD-10AVVP 除氣器DGU-14AM 送液單元LC-10ADVP (島津公司製商品名) 管柱·· YMC-PackODS-AM、型號 AM-312 尺寸 150x6.0 mmI.D.( YMC Co.,Ltd. Japan 公司製造) 流量:0.75 mL/min 溶離液:THF/水=63/37含有〇·ΐ%三1乙酸 58 201238968 41468pif 溫度:40°C 檢測波長:254 nm (b)金屬錯合物色素組成物中的金屬錯合物色素的鑑定 測量金屬錯合物色素組成物的LC-MS以鑑定金屬錯 合物色素組成物所含金屬錯合物色素的結構。LC-MS是藉 由以下方法來進行。 (LC-MS的測量條件)Equipment used: System controller SCL-10AVP Column oven CTO-10ASVP Detector SPD-10AVVP Deaerator DGU-14AM Liquid supply unit LC-10ADVP (product name manufactured by Shimadzu Corporation) Column ·· YMC-PackODS-AM, model number AM-312 size 150x6.0 mmI.D. (manufactured by YMC Co., Ltd. Japan) Flow rate: 0.75 mL/min Eluent: THF/water = 63/37 containing 〇·ΐ% triacetic acid 58 201238968 41468pif Temperature :40°C Detection wavelength: 254 nm (b) Identification of metal complex pigment in metal complex pigment composition. Measurement of LC-MS of metal complex pigment composition to identify metal complex pigment composition A structure containing a metal complex pigment. LC-MS was carried out by the following method. (Measurement conditions of LC-MS)

裝置:Applied Biosystems QSTAR pulser (商品名)、 Applied Biosystems 公司製造 離子化法:ESI-posi 檢測法:TOF-MS 管柱:YMC-Pack ODS-AM、型號 AM-312 尺寸 150x6.0 mml.D. (YMC Co” Ltd· Japan 製造) 流量:0.75 mL/minDevice: Applied Biosystems QSTAR pulser (trade name), Applied Biosystems, Inc. Ionization method: ESI-posi Detection method: TOF-MS Column: YMC-Pack ODS-AM, Model AM-312 Size 150x6.0 mml.D. (Manufactured by YMC Co" Ltd. Japan) Flow rate: 0.75 mL/min

溶離液.THF/水=63/37含有〇·1%^氣乙酸 溫度:40°C 以D-17為主成分的金屬錯合物色素組成物所含的通 式(5)的金屬錯合物色素及通式(6)的檢測為以下結構。又’ 酸性基的對離子因溶離液含有三氟乙酸而檢測為質子。金 屬錯合物組成物中,對離子可為質子或四丁基銨。 59 201238968 'Tl'tuopifDissolved solution. THF/water = 63/37 contains 〇·1%^ gas acetic acid Temperature: 40°C The metal complex compound composition containing D-17 as a main component is a metal complex of the formula (5) The detection of the substance dye and the formula (6) has the following structure. Further, the acid-based counter ion was detected as a proton by the inclusion of trifluoroacetic acid in the eluent. In the metal complex composition, the counter ion may be proton or tetrabutylammonium. 59 201238968 'Tl'tuopif

CeHn C$H”CeHn C$H”

C5H„C5H„

959.194 (M+H)+ 515 nm MS-ESI m/z : 991.163 (M+H)+ 吸收極大波長:542 nm 以D-ll為主成分的金屬錯合物色素組成物及以D1〇 為主成分的金屬錯合物色素組成物中所含的通式(5)的金 屬錯合物色素及通式(6)的均檢測為以下結構。另外,酸性 基的對離子因溶離液含有三氟乙酸而檢測為質子,但金屬 錯合物組成物中對離子可為質子或四丁基銨。 C6H13959.194 (M+H)+ 515 nm MS-ESI m/z : 991.163 (M+H)+ Maximum absorption wavelength: 542 nm The composition of the metal complex with D-ll as the main component and D1〇 The metal complex dye of the formula (5) and the formula (6) contained in the metal complex dye composition of the component were all detected as follows. Further, the ion pair of the acidic group is detected as a proton by the trifluoroacetic acid in the eluate, but the counter ion in the metal complex composition may be a proton or a tetrabutylammonium. C6H13

〇βΗ13〇βΗ13

MS-ESI m/z ' 971.194 (M+H)+ 939.223 (M+H)+ 吸收極大波長:540 nm 513 nm 4.色素在溶液中的溶解性的評價 201238968 41468pif 使表1所示各金屬錯合物色素組成12 mg在暗室中溶 於50mL曱苯及50mL曱醇的混合溶劑中,在25°C下用搜 拌翼攪拌15分鐘得色素溶液。使用上述3.的方法所用的 HPLC裝置對此溶液中通式(1)所示金屬錯合物色素的溶解 量作定量。將溶解量為11.0 mg以上12.0 mg以下標為A, 10.0 mg以上小於11_〇 mg標為Β,9·〇 mg以上小於1〇 〇 標為C,小於9.0 mg標為D,其中a及B為合格。 5.色素在半導體微粒電極上的吸附性評價 (半導體微粒電極的製作) 以濺鍍法在玻璃基板上形成摻氟氧化錫作為透明導電 膜,用雷射切割之,而將透明導電膜分割成2個部分。 接著,在包含體積比4:1的水與乙腈的100mL混合溶 劑中調配32 g銳鈦礦型氧化鈦(日本Aer〇sil公司製 (商品名)),用自轉/公轉併用式的混合調節器均勻分散、 混合,而得半導體微粒分散液。將此分散液塗布於透明導 電膜上,在500。(:下加熱而製作半導體微粒電極。 續以相同方式製作含質量比4〇:6〇的Si〇2粒子與金紅 石型氧化鈦的分散液,將此分散液塗在上述受光電極上, 在500°C加熱形成絕緣多孔體,再形成碳電極作為對電極。 接著在表1的金屬錯合物色素組成的乙醇溶液中,將 形成了上述絕緣多孔體的玻璃基板浸泡12小時。將染了增 感色素的玻璃在4.三級丁基吼㈣1Q%乙醇溶液中浸泡 30分鐘後,用乙醇清洗並自然乾燥。如此所得的感光|的 厚度為10/mi,半導體微粒的塗布量為2〇g/m2。 9 201238968 w a * v/vr^/ΐί (吸附性評價) 將上述方法製作的半導體微粒電極中的2 3 cm2在暗 至^ 40C下於各色素溶液中泡3〇分鐘。用1〇% tba〇h 曱醇溶液對色素吸附後的半導體微粒電極進行色素脫附, 以HPLC定量各色素的初始吸附量^與上述3的方法所 用的HPLC相同的方法求出溶液t的溶解量。吸附量!㈣ 以上時標為A ’ 0·9 mg以上小於μ mg為B,〇以上 ^〇.9mg^C&gt;^〇.7mg^D^tA^B^^〇 6.光電轉換元件的光電轉換效率評價 (半導體微粒電極的製作) 以濺鑛法在玻絲板上戦縣氧倾作為透明導電 膜’以,射切割之,而將透明導電膜分割成2個部分。 Ϊ者,在包含體積比4:1的水與乙腈的_mL混合溶 劑中調配32 g銳鈦礦型氧化鈦(日本Aerosil公司製p_25 (^品名)),用自轉/公轉個式的混合調鞋均勻分散、 而得半導m錄分散液。將此分散液塗布於透明導 膜上’在50〇°c下加熱而製作半導體微粒電極。 續以相同方式製作含質量比4議的峨粒子與金紅 石型氧化_分驗,將此分舰塗在上述受光電極上, 在5〇0 ^加熱形成絕緣多孔體,再形成碳電極作為對電極。 著在4’所製備的表1所示的色素溶液中,將形成 :上述絕緣多孔體的破璃基板浸包12小.將染了增感色 =玻璃在4:三級丁基㈣的腦乙醇溶液中浸泡%分 里後’用乙醇清洗並自然乾燥。如此而得的感光層的厚度 62 201238968 41468pif 為10 ym ’半導體微粒的塗布量為2〇 g/m2。 然後,將半導體微粒電極隔著50 μιη厚的熱可塑性聚 烯烴樹脂片與鉑濺鍍FTO基板對向配置,使樹^片部熱熔 融而將兩極板固定。 又,自預先在鉑濺鍍極側開出的注液口注入電解液, 並充滿電極間,再用環氧系密封樹脂正式密封周邊部及電 解液注液口’在集電端子部塗布銀膠而製作光電轉換元件。 電解液是使用碘化二曱基丙基咪唑鏽(0 5m〇1/L)、碘 (0.1mol/L)的曱氧基丙腈溶液。 (光電轉換元件的評價) 使500 W氙氣燈(Ushio電機公司製)的光通過ΑΜι 5 濾光片(Oriel公司製)及銳截止濾光片(Kenk〇L_42), 以製作不含紫外線的模擬太陽光。光強度為89mW/cm2。 在前述光電化學電池的導電性玻璃板與鉑蒸鍍玻璃板 上分別連接鱷魚夾,使各鱷魚夾連接電流電壓測量裝置 (Keithley SMU238型(商品名))。自導電璃板側對其照 射模擬太陽光,以電流電壓測量裝置測量所產生的電。將 藉此求出的光電化學電池轉換效率為9.0%以上標為A, 8.0%以上小於9.0%標為B,7.0%以上小於8.0%標為C, 小於7.0%標為D ’其中A及B為合格。 63 201238968 表1 金屬錯合 物色素(*〕 运式(5)的 色素的含 有率(%) 通式⑹的 色素的含 有率(%) 金屬錯合物色素的 製造的加熱方式 純化方法 溶解 t 吸附 t —.—. 轉換 效率 實例1 D-17(0.5) 0.4 0.1 外部加熱(油浴) SephadexLH-20 B B B 實例2 D-17(2.0) 1.8 0.2 外部加熱(油浴) SephadexLH-20 A A A 實例3 D-17(4.1) 3.6 0.4 外部加熱(油浴) SephadexLH-20 A 一A — 實例4 D-17(5_0) 4.5 0.5 外部加熱(油浴) SephadexLH-20 A A· — A 實例5 D-l 1(0.5) 0.4 0.1 外部加熱(油浴) SephadexLH-20 B B &quot; — B 實例6 D-ll(1.8) 1.6 0.2 外部加熱(油浴) SephadexLH-20 A A A 實例7 D-l 1(3.8) 3.5 0.3 外部加熱(油浴) SephadexLH-20 A —— A 實例8 D-l 1(4.8) 4.4 0.4 外部加熱(油浴) SephadexLH-20 A A — A 實例9 0-10(0.5) 0.4 0.1 外部加熱(油浴) SephadexLH-20 B ---- B 實例10 D-10(1.9) 1.7 0.2 外部加熱(油浴) SephadexLH-20 B B ----- B 實例11 D-10(3.5) 3.2 0.3 外部加熱(油浴) SephadexLH-20 A A .·—· A 實例12 D-10(4_9) 4.5 0.4 外部加熱(油浴) SephadexLH-20 A A ——. A 比較例1 D-17(5.3) 4.7 0.6 微波加熱 SephadexLH-20 A B~ — c 比較例2 D-17(5.5) 5.0 0.5 微波加熱. SephadexLH-20 A C &quot; ---- D 比較例3 D-17(7.0) 6.3 0.7 微波加熱 SephadexLH-20 A c D 比較例4 D-l 7(0) 0 0 外部加熱(油浴) HPLC製備 D D ΊΓ 比較例5 D-ll(5.3) 4.7 0.6 微波加熱 SephadexLH-20 A B c 比較例6 D-l 1(5.7) 5.0 0.7 微波加熱 SephadexLH-20 A c n 比較例7 D-l 1(6.9) 6.1 0.8 微波加熱 SephadexLH-20 A c —^_ n 比較例8 D-l 1(0) 0 0 外部加熱(油浴) HPLC製備 D D — n 比較例9 D-10(5.3) 4.6 0.7 微波加熱 SephadexLH-20 A B r 比較例10 D-10(5.6) 5.0 0.6 微波加熱 SephadexLH-20 A C D 比較例11 D-10(7_l) 6.2 0.9 微波加熱 SephadexLH-20 A C ----- ΤΛ 比較例12 D-10(0) 0 0 外部加熱(油浴) HPLC製備 D D &quot; ---— D (*)括弧内是通式(5)及通式(6)的含有準C%)的兮訂 由表1可知,通式(5)或(6)所示的金屬錯合物色素過多 時,光電轉換效率有問題;該些金屬錯合物色素過少時, 色素的溶解量、吸附量及光電轉換效率也都有問題。 相對於此,本發明的金屬錯合物色素組成均可滿足任 一種特性。若通式(5)或(6)所示金屬錯合物色素的含量多, 則有溶解度提高的傾向;該些金屬錯合物含量&gt;5()% 有吸附量變少的傾向,此種情況估計是通式(5)或(6)二, 低轉換效率金屬錯合物色素優先吸附,導致轉換致率示的 64 201238968 41468pif 本發明與其實施形態一併說明如上,但只要未特別指 疋,其不限於說明的任意細節,只要不脫離隨附申請專利 範圍所示的發明精神與範圍,則應可在寬廣範圍内解釋。 本申請案主張於2011年3月11日向日本申請的曰本 專利特願2011-054802的優先權,此處參照並引用其内容 作為本說明書的記載的一部分。 【圖式簡單說明】 圖1是示意性表示根據本發明而製造的光電轉換元件 之一實施形態的剖面圖。 【主要元件符號說明】 1 :導電支撐體 3:電荷遷移體層 5 :受光電極 10 :光電轉換元件 22 :半導體微粒 2:感光體層 4 :對電極 6:外部電路 21 :增感色素 100 :光電化學電池MS-ESI m/z ' 971.194 (M+H)+ 939.223 (M+H)+ Absorption maximum wavelength: 540 nm 513 nm 4. Evaluation of the solubility of pigment in solution 201238968 41468pif Make the metals shown in Table 1 wrong The pigment composition 12 mg was dissolved in a mixed solvent of 50 mL of hydrazine and 50 mL of decyl alcohol in a dark room, and the mixture was stirred at 25 ° C for 15 minutes with a stirring wing to obtain a pigment solution. The amount of the metal complex dye represented by the formula (1) in the solution was quantified using the HPLC apparatus used in the above method. The dissolved amount is 11.0 mg or more and 12.0 mg or less is marked as A, 10.0 mg or more and less than 11_〇mg is marked as Β, 9·〇mg is less than 1 〇〇 is marked as C, and less than 9.0 mg is marked as D, where a and B To be qualified. 5. Evaluation of Adsorption of Pigment on Semiconductor Microparticle Electrode (Production of Semiconductor Microparticle Electrode) A fluorine-doped tin oxide was formed on a glass substrate by a sputtering method as a transparent conductive film, and the transparent conductive film was divided by laser cutting. 2 parts. Next, 32 g of anatase-type titanium oxide (manufactured by Aer〇sil Co., Ltd., Japan) was blended in a 100 mL mixed solvent containing water and acetonitrile in a volume ratio of 4:1, and a mixing regulator was used for the rotation/revolution type. Disperse and mix uniformly to obtain a semiconductor fine particle dispersion. This dispersion was applied to a transparent conductive film at 500. (The semiconductor microparticle electrode was produced by heating down. A dispersion containing Si〇2 particles and rutile-type titanium oxide having a mass ratio of 4〇:6〇 was produced in the same manner, and the dispersion was applied onto the light-receiving electrode. The insulating porous body was formed by heating at 500 ° C, and a carbon electrode was formed as a counter electrode. Next, the glass substrate on which the above-mentioned insulating porous body was formed was immersed in an ethanol solution of the metal complex dye composition of Table 1 for 12 hours. The sensitized pigment glass was immersed in a 4.tributylphosphonium (tetra) 1Q% ethanol solution for 30 minutes, then washed with ethanol and naturally dried. The thus obtained photosensitive | thickness was 10 / mi, and the coating amount of the semiconductor fine particles was 2 〇. g/m2. 9 201238968 wa * v/vr^/ΐί (Adsorption evaluation) 2 3 cm 2 of the semiconductor fine particle electrode produced by the above method was bubbled in each dye solution for 3 minutes in the dark to 40 C. 〇% tba〇h The sterol solution was subjected to dye desorption of the semiconductor fine particle electrode after the dye adsorption, and the initial adsorption amount of each dye was quantified by HPLC. The amount of the solution t dissolved was determined by the same method as the HPLC used in the above method. Adsorption amount! (4) The upper time scale is A '0·9 mg or more and less than μ mg is B, 〇 above ^〇.9mg^C>^〇.7mg^D^tA^B^^〇6. Photoelectric conversion efficiency evaluation of photoelectric conversion elements ( Production of semiconductor microparticle electrode) In the sputtering method, the oxygen is tilted as a transparent conductive film on a glass plate, and the transparent conductive film is divided into two parts by a sputtering process. The volume ratio is 4: 32 g of anatase-type titanium oxide (p_25 (product name) manufactured by Nippon Aerosil Co., Ltd.) was mixed with water and acetonitrile in _mL mixed solvent, and uniformly dispersed by a rotation/revolution type mixing shoe to obtain a semiconducting m. Recording the dispersion. The dispersion is applied to a transparent conductive film and heated at 50 ° C to produce a semiconductor microparticle electrode. Continue to produce a ruthenium particle with a mass ratio of rutile in the same manner. The sub-ship was coated on the above-mentioned light-receiving electrode, and an insulating porous body was formed by heating at 5 〇 0 ^, and a carbon electrode was formed as a counter electrode. In the dye solution shown in Table 1 prepared in 4', it was formed: Insulating porous body of glass substrate dip 12 small. Will be dyed with sensitized color = glass in 4: tertiary butyl (four) brain After immersing in the alcohol solution for % minutes, it was washed with ethanol and dried naturally. The thickness of the photosensitive layer obtained in this way was 62 201238968 41468pif was 10 μm 'the coating amount of the semiconductor fine particles was 2〇g/m 2 . Then, the semiconductor fine particles were separated. A 50 μm thick thermoplastic polyolefin resin sheet is disposed opposite to the platinum sputtered FTO substrate, and the tree portion is thermally melted to fix the two plates. Further, the liquid injection port is opened from the platinum sputtering electrode side in advance. The electrolyte solution was injected and filled between the electrodes, and the peripheral portion and the electrolyte injection port were sealed with an epoxy-based sealing resin. A silver paste was applied to the current collecting terminal portion to prepare a photoelectric conversion element. The electrolytic solution was a decyloxypropionitrile solution using dimercaptopropylimidazolium rust (0.5 m〇1/L) and iodine (0.1 mol/L). (Evaluation of Photoelectric Conversion Element) Light of a 500 W xenon lamp (manufactured by Ushio Electric Co., Ltd.) was passed through a 5ι 5 filter (manufactured by Oriel) and a sharp cut filter (Kenk〇L_42) to prepare a UV-free simulation. sunshine. The light intensity was 89 mW/cm2. An alligator clip is attached to each of the conductive glass plate and the platinum vapor-deposited glass plate of the photoelectrochemical cell, and each of the alligator clips is connected to a current-voltage measuring device (Keithley SMU238 type (trade name)). The simulated sunlight is irradiated from the side of the conductive glass plate, and the generated electricity is measured by a current-voltage measuring device. The photoelectrochemical cell conversion efficiency determined thereby is 9.0% or more and is marked as A, 8.0% or more and less than 9.0% is marked as B, 7.0% or more and less than 8.0% is marked as C, and less than 7.0% is marked as D 'where A and B are To be qualified. 63 201238968 Table 1 Metal complex dye (*) Content of pigment (%) of the formula (5) Content of pigment of the formula (6) (%) Method for purification of metal complex dye production method Adsorption t —.—. Conversion efficiency Example 1 D-17(0.5) 0.4 0.1 External heating (oil bath) Sephadex LH-20 BBB Example 2 D-17(2.0) 1.8 0.2 External heating (oil bath) Sephadex LH-20 AAA Example 3 D-17(4.1) 3.6 0.4 External heating (oil bath) Sephadex LH-20 A-A — Example 4 D-17(5_0) 4.5 0.5 External heating (oil bath) Sephadex LH-20 AA· — A Example 5 Dl 1 (0.5 0.4 0.1 External heating (oil bath) Sephadex LH-20 BB &quot; — B Example 6 D-ll(1.8) 1.6 0.2 External heating (oil bath) Sephadex LH-20 AAA Example 7 Dl 1 (3.8) 3.5 0.3 External heating (oil) Bath) Sephadex LH-20 A - A Example 8 Dl 1 (4.8) 4.4 0.4 External heating (oil bath) Sephadex LH-20 AA - A Example 9 0-10 (0.5) 0.4 0.1 External heating (oil bath) Sephadex LH-20 B ---- B Example 10 D-10(1.9) 1.7 0.2 External heating (oil bath) SephadexLH-20 BB ----- B Real Example 11 D-10(3.5) 3.2 0.3 External heating (oil bath) Sephadex LH-20 AA .··· A Example 12 D-10(4_9) 4.5 0.4 External heating (oil bath) Sephadex LH-20 AA ——. A comparison Example 1 D-17(5.3) 4.7 0.6 Microwave Heating Sephadex LH-20 AB~ — c Comparative Example 2 D-17(5.5) 5.0 0.5 Microwave Heating. SephadexLH-20 AC &quot; ---- D Comparative Example 3 D-17 (7.0) 6.3 0.7 Microwave heating Sephadex LH-20 A c D Comparative Example 4 Dl 7(0) 0 0 External heating (oil bath) HPLC preparation DD ΊΓ Comparative Example 5 D-ll(5.3) 4.7 0.6 Microwave heating Sephadex LH-20 AB c Comparative Example 6 Dl 1 (5.7) 5.0 0.7 Microwave Heating Sephadex LH-20 A cn Comparative Example 7 Dl 1 (6.9) 6.1 0.8 Microwave Heating Sephadex LH-20 A c —^_ n Comparative Example 8 Dl 1(0) 0 0 External Heating (oil bath) HPLC preparation DD - n Comparative Example 9 D-10 (5.3) 4.6 0.7 Microwave heating Sephadex LH-20 AB r Comparative Example 10 D-10 (5.6) 5.0 0.6 Microwave heating Sephadex LH-20 ACD Comparative Example 11 D- 10(7_l) 6.2 0.9 Microwave heating Sephadex LH-20 AC ----- ΤΛ Comparative Example 12 D-10(0) 0 0 External heating (oil bath) HPLC preparation DD &quot; ---- D (*) brackets It is understood from Table 1 that the general formula (5) and the formula (6) contain a quasi-C%). When the metal complex dye represented by the formula (5) or (6) is too large, there is a problem in photoelectric conversion efficiency. When the color of the metal complex is too small, the amount of the pigment dissolved, the amount of adsorption, and the photoelectric conversion efficiency are also problematic. On the other hand, the metal complex dye composition of the present invention can satisfy any of the characteristics. When the content of the metal complex dye represented by the formula (5) or (6) is large, the solubility tends to increase; and the content of the metal complex &gt; 5 (%) tends to decrease the amount of adsorption. The case is estimated to be the general formula (5) or (6). The low conversion efficiency metal complex pigment preferentially adsorbs, resulting in conversion yield. 64 201238968 41468pif The present invention is as described above with respect to its embodiment, but unless otherwise specified It is to be understood that the invention is not limited to the details of the invention, and is intended to be construed in a broad scope. The present application claims priority to Japanese Patent Application No. 2011-054802, filed on Jan. 11, 2011, which is hereby incorporated by reference. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view schematically showing an embodiment of a photoelectric conversion element manufactured according to the present invention. [Description of main component symbols] 1 : Conductive support 3: Charge transport layer 5 : Light-receiving electrode 10 : Photoelectric conversion element 22 : Semiconductor fine particle 2 : Photoconductor layer 4 : Counter electrode 6 : External circuit 21 : Sensitized dye 100 : Photoelectrochemistry battery

65 S65 S

Claims (1)

201238968 HIHOOpif 七、申請專利範圍·· 1.一種金屬錯合物色素紐·成物,包括··下述通式(1)所 示的金屬錯合物色素’以及下述通式(5)所示的金屬錯合物 色素及/或下述通式(6)所示的金屬錯合物色素; 按HPLC(高效液相層析法)的254 nm檢測的面積計, 通式(5)所示的金屬錯合物色素及通式(6)所示的金屬錯合 物色素的含有率合計為〇.5〜5%, M (LV)ml(LL2)m2(zx)2 . (CIi)m3 通式(l) 2⑴中’ Μι表示金屬原子,山為下述通式(2)所示€ -己位基,LL為下述通式(3)所示的2牙配位基, 不1,m2矣千1 · 71 * 酸基及異场氰基的至少為2異硫氛基、異1 荷時的對離子,邮為Λ種上=表數^要對離子來中和, R,v* R&quot; R2' R12 通式(2)201238968 HIHOOpif VII. Patent application range 1. A metal complex dye complex, including a metal complex dye represented by the following formula (1) and a formula (5) The metal complex dye and/or the metal complex dye represented by the following formula (6); the area of the formula (5) measured by HPLC (high performance liquid chromatography) at 254 nm The content ratio of the metal complex dye and the metal complex dye represented by the formula (6) is 〇5 to 5%, M (LV) ml (LL2) m2 (zx) 2 (CIi). M3 In the formula (1) 2(1), 'Μι denotes a metal atom, the mountain is a hexyl group represented by the following formula (2), and LL is a 2-dentate ligand represented by the following formula (3), 1, m2矣1 1 · 71 * The acid group and the isocyanate group are at least 2 iso-sulfuryl groups, and the opposite ion is ion-on-charge. The number is the number of the table = the number of ions is to be neutralized by the ions, R ,v* R&quot; R2' R12 general formula (2) 通式(3) 66 201238968 41408pif [通式(3)中,nl、n2獨立表不0〜3的整數,Y1、γ2獨立表 示氫原子或下述通式(4)所7^雜芳基’但Αι·1及Ar2獨立 表示下述通式(4)所示的雜芳基] R3' 通式(4) [通式(4)中,R31〜R33獨立矣+与κ Γ 二㈣子、烧基、烧氧基或炔 基,R31〜R33中的至少1個為焓其 ^ 拓工1 π 芍烷基、烷氧基或炔基;X為硫 _R4’R4為氣原子、炫基、芳基 Mi(LLi)ml(LL2)m2(Zl)(CN) · (cil) 'm3 通式(5) [通式(5)中,Μ1、!^1、]^ 7l μ 含義與通式⑴中的相同]、、CI、仏1112及m3的 通式(6) Ml(LLl)ml(LL2WCN)2 · (cil)m3 [通式⑹中,71 ρτ1 含義與通式⑴中的相同]。、CI、na、m2及m3的 2.如申請專利矿圖* 物,其中通式m由弟1項所述之金屬錯合物色素組成 、LL2由下述通式⑺表示: 67 201238968General formula (3) 66 201238968 41408pif [In the general formula (3), nl and n2 independently represent an integer of 0 to 3, and Y1 and γ2 independently represent a hydrogen atom or a 7-heteroaryl group of the following formula (4). However, Αι·1 and Ar2 independently represent a heteroaryl group represented by the following formula (4): R3' Formula (4) [In the formula (4), R31 to R33 are independently 矣+ and κ Γ two (four), a pyridyl group, an alkoxy group or an alkynyl group, at least one of R31 to R33 is a ruthenium, alkoxy or alkynyl group; X is a sulfur _R4'R4 is a gas atom, a stilbene group , aryl Mi (LLi) ml (LL2) m2 (Zl) (CN) · (cil) 'm3 General formula (5) [In the general formula (5), Μ 1,! ^1,]^ 7l μ has the same meaning as in the formula (1)], CI, 仏1112 and m3 of the formula (6) Ml(LLl)ml(LL2WCN)2 · (cil)m3 [in the formula (6), 71 ρτ1 has the same meaning as in the general formula (1)]. 2. CI, na, m2, and m3 2. For example, the patented mine image, wherein the general formula m is composed of the metal complex pigment described in the first item, and LL2 is represented by the following general formula (7): 67 201238968 通式⑺ [通式⑺中’ R41〜;R43及R5,〜R53獨立表示氳原子、烷基、 烷氧基或炔基;中的至少i個為烷基、烷氧基戒辦 基;R51〜R53中的至少丨個為烷基、烷氧基或炔基;X1及 X2各自獨立為硫原子、氧原子、硒原子或NR7,R7為氮雇 子、烷基、芳基或雜環基]。 3. 如申請專利範固第2項所述之金屬錯合物色素錤成 物,其中通式⑺中的X1及X2為硫原子。 4. 如申請專利範圍第1〜3項中任一項所述之金屬鍺合 物色素組成物’其中通式(1)所示的金屬錯合物色素由卞述 通式(8)表示:General formula (7) [In the general formula (7), 'R41~; R43 and R5, and R53 independently represent a halogen atom, an alkyl group, an alkoxy group or an alkynyl group; at least i of which are alkyl groups, alkoxy groups; R51 At least one of R53 is an alkyl group, an alkoxy group or an alkynyl group; X1 and X2 are each independently a sulfur atom, an oxygen atom, a selenium atom or NR7, and R7 is a nitrogen atom, an alkyl group, an aryl group or a heterocyclic group. ]. 3. The metal complex dye oxime product according to claim 2, wherein X1 and X2 in the formula (7) are sulfur atoms. 4. The metal ruthenium dye composition according to any one of claims 1 to 3 wherein the metal complex dye represented by the formula (1) is represented by the following formula (8): 通式(8) [通式(8)中,R61、R62 A2獨立表示羧基或其In the formula (8), R61 and R62 A2 independently represent a carboxyl group or 物色素組成物,其中通π 地及金屬御^ '(5)所示的金屬錯合物色素由卞述 5.如申睛專利範圍第 68 201238968 41468pif 通式(9)表示 (10)表示: 通式(6)所示的金屬錯合物色素由下述诵式The pigment composition, wherein the metal complex dye represented by π 地地 and metal ^ ' (5) is described in detail. 5. For example, the scope of the patent patent is 68 201238968 41468pif (9) represents: The metal complex dye represented by the formula (6) is represented by the following formula [通式(9)中,R71及只72撫[In general formula (9), R71 and only 72 R獨立表示烷基、烷氧基或炔基,A5、 A獨立表示鲮基或其鹽; 通式⑽中,R73及R74獨立表示烧基、院氧基或块基, A、A獨立為缓基或其鹽]。 6·如申請專利範圍第1〜5項中任一項所述之金屬錯合 物色素組成物,其中通式(5)所示的金屬錯合物色素由下述 通式(11)表示,通式(6)所不的金屬錯合物色素由下述通式 (12)表示:R independently represents an alkyl group, an alkoxy group or an alkynyl group, and A5 and A independently represent a fluorenyl group or a salt thereof; in the formula (10), R73 and R74 independently represent an alkyl group, an alkoxy group or a block group, and A and A are independently slow. Base or its salt]. The metal complex dye composition according to any one of claims 1 to 5, wherein the metal complex dye represented by the formula (5) is represented by the following formula (11). The metal complex dye which is not represented by the formula (6) is represented by the following formula (12): 69 201238968 H-l^OOpif [通式(11)及(12)中,R81〜R84獨立表示炔基;A13〜A16 獨立表示羧基或其鹽]。 7·—種下述通式(1)的金屬錯合物色素的製造方法,包 括:藉由外部加熱使包含下述通式(13)的金屬錯合物色素 與下述通式(14)的化合物的混合液的溫度上升; M1(LL1)ml(LL2)m2(Z2)m4 · (CI1)^ 通式(13) [通式(13)中’ Μ1、LL1、LL2、Cl1、ml及m2的含義與通 式(1)中的相同;Z2為1牙或2牙配位基;m4表示u的 整數,Z2為1牙配位基時m4表示2,Z2為2牙配位基時 m4表示1 ; 為〇以上的整數] MUQCN 通式(14) 通式(1) · (CIi)c [通式(1)中,Μ1表示金屬原子,Ll1 2牙配位基,ll2為下述通式(3)所示的下述通式(2)所示的 示1,m2表示1,m3為1或2 ; ^表2牙配位基;ml表 硫氰基、異氰酸基及異硒氰基的 不配位基,為選自異 ^種办表示需要對 201238968 41468pif 離子來中和電荷時的對離子] R'2 Rn R2' R22 通式(2) ,式(2)中’R〜R 4及R21〜R24獨立表示酸 原子,R11〜R14及R21〜P24H 土 X-、孤:¾風 ,R21 p24tb„ , R可相同亦可不同;其中,Rll〜R14 R中的至個為酸性基或其鹽]69 201238968 H-l^OOpif [In the formulae (11) and (12), R81 to R84 independently represent an alkynyl group; and A13 to A16 independently represent a carboxyl group or a salt thereof]. 7. A method for producing a metal complex dye of the following formula (1), comprising: a metal complex dye comprising the following formula (13) by external heating and a general formula (14) The temperature of the mixture of the compounds is increased; M1(LL1)ml(LL2)m2(Z2)m4 · (CI1)^ General formula (13) [In the formula (13), Μ1, LL1, LL2, Cl1, ml and The meaning of m2 is the same as in the general formula (1); Z2 is a 1-dental or 2-dentate ligand; m4 represents an integer of u, when Z2 is a dental ligand, m4 represents 2, and Z2 is a 2-dentate ligand. M4 represents 1; is an integer above ]] MUQCN Formula (14) Formula (1) · (CIi)c [In the formula (1), Μ1 represents a metal atom, Ll1 2dentate ligand, ll2 is as follows The formula represented by the following formula (2) represented by the formula (3), m2 represents 1, m3 is 1 or 2; ^ table 2 tooth ligand; ml thiocyanate, isocyanate group and The incompatible group of the isoselenocyano group is selected from the group of isotopes, which means that the ions are neutralized by the ions of 201238968 41468pif ions. R'2 Rn R2' R22 Formula (2), in formula (2) 'R~R 4 and R21~R24 independently represent acid atoms, R11~R14 and R21~P24H soil X-, orphan: 3⁄4 wind, R21 p24tb , R may be the same or different; wherein, one of R11 to R14 R is an acidic group or a salt thereof] 通式(3) t式上3)中、’ nl、、,n2獨立表示0〜3的整數,γ1、Y2獨立表 :虱;子或下述通物所示的雜絲,但A 表不下述通式(4)所示的雜芳基] 及r獨立 A R31 rM通式(4) [通式(4)中,r3i〜r33 基,R31〜R33中的s + 示氣原子、絲、烧氧基或炔 原子、氧料、^個為錄、餘基或絲;X為硫 或雜環基]、。 ’、或1^1^4,〆為氫原子、烷基、芳基 8·如申請專利範圍笛 造方法,弟7項所述之金屬錯合物色素的製 通式⑴中的W由下述通式⑺表示: 71 201238968.,In the formula (3) t, in the above 3), 'nl,,, n2 independently represent an integer of 0 to 3, and γ1 and Y2 are independent of each other: 虱; sub- or the following general-purpose filament, but A is not The heteroaryl group represented by the formula (4) and the r-independent A R31 rM formula (4) [in the formula (4), r3i to r33 groups, s + in R31 to R33 represent a gas atom, a silk, An alkoxy group or an alkyne atom, an oxygen material, or a residue or a residue; X is a sulfur or a heterocyclic group]. ', or 1^1^4, 〆 is a hydrogen atom, an alkyl group, an aryl group. 8. As in the patent application range, the metal complex dye described in the seventh item is in the general formula (1). The general formula (7) represents: 71 201238968., [通式⑺中’ R41〜R43及rm〜R53獨立表示氫原子、烷基、 烧氧基Μ或1 基;R41〜R43中的至少丨個為炫基、絲基或块 基2 ; R51〜R53 +的至少1個為絲、:^氧基或炔基;X1及 X2各自獨立為硫原子、氧原子、石西原子或NR7,R7為氫原 子、烷基、芳基或雜環基]^ 9·如申請專利範圍第8項所述之金屬錯合物色素的製 造方法’其中通式(7)中的χι及χ2為硫原子。 ίο.如申請專利範m第7〜9項巾任—項所述之金屬錯 合物色素的製造方法,其巾通式⑴由下述通式⑻表示,通 式(13)由下述通式(15)表*,通式(M)由下述通式(I6)表示:[In the formula (7), 'R41 to R43 and rm to R53 independently represent a hydrogen atom, an alkyl group, an alkoxy group or a group; and at least one of R41 to R43 is a stilbene group, a silk group or a block group 2; R51~ At least one of R53 + is a silk, :oxy or alkynyl group; X1 and X2 are each independently a sulfur atom, an oxygen atom, a lithiate atom or NR7, and R7 is a hydrogen atom, an alkyl group, an aryl group or a heterocyclic group] The method for producing a metal complex dye according to the invention of claim 8, wherein the oxime and oxime 2 in the formula (7) are sulfur atoms. ί 如 申请 申请 申请 申请 申请 申请 申请 申请 申请 申请 申请 申请 申请 申请 申请 巾 巾 巾 巾 巾 巾 巾 巾 巾 巾 巾 巾 巾 巾 巾 巾 巾 巾 巾 巾 巾 巾 巾 巾 巾 巾 巾 巾 巾 巾 巾 巾Formula (15), the general formula (M) is represented by the following general formula (I6): [通式(8)及(I5)中,R6i、R62、R9i、R92獨立表示氫原子、 烧基、烧氧基或快基’ Αι〜A4獨立表示羧基或其鹽;通式 (16)中M12表示無機或有機的銨離子、質子或鹼金屬離子]。 72 201238968 41468pif 11.如申請專利範圍第7〜9項中任一項所述之金屬錯 合物色素的製造方法’其中通式(1)由下述通式(17)表示,a 通式(13)由下述通式(18)表示,通式(14)由下述通式(1=表[In the general formulae (8) and (I5), R6i, R62, R9i, and R92 independently represent a hydrogen atom, a pyridyl group, an alkoxy group or a fast group 'Αι~A4 independently represent a carboxyl group or a salt thereof; in the formula (16) M12 represents an inorganic or organic ammonium ion, a proton or an alkali metal ion]. The method for producing a metal complex dye according to any one of claims 7 to 9 wherein the formula (1) is represented by the following formula (17), a formula ( 13) is represented by the following general formula (18), and the general formula (14) is represented by the following formula (1 = table) 通式(17) 通式(18)通式(19) [通式(17)及(18)中,R101、R102、R1U、獨立表示炔基, A9〜A12獨立表示羧基或其鹽;通式(19)中,Mu表示‘機 或有機的銨離子、質子或鹼金屬離子]。 … 12·—種光電轉換元件,其使用如申請專利範圍第 項中任一項所述之金屬錯合物色素組成物作為增感色素。 13·—種光電轉換元件,其使用藉由如申請專利範圍第 7〜11項中任一項所述之金屬錯合物色素的製造方法而製 造的金屬錯合物色素。 14.一種光電化學電池’其具備如申請專利範圍第丨〜^ 項中任一項所述之光電轉換元件。 73General formula (17) Formula (18) Formula (19) [In the formulae (17) and (18), R101, R102, R1U independently represent an alkynyl group, and A9 to A12 independently represent a carboxyl group or a salt thereof; In (19), Mu represents 'machine or organic ammonium ion, proton or alkali metal ion'. (12) A photoelectric conversion element using the metal complex dye composition according to any one of the above claims as a sensitizing dye. A metal complex dye produced by the method for producing a metal complex dye according to any one of claims 7 to 11, wherein the metal complex dye is produced. A photoelectrochemical cell, which is provided with a photoelectric conversion element according to any one of the preceding claims. 73
TW101105829A 2011-03-11 2012-02-29 Metal complex dye composition, photoelectric transducing element and photoelectrochemical cell, and method for preparing metal complex dye TWI564301B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011054802 2011-03-11
JP2012044602A JP5816111B2 (en) 2011-03-11 2012-02-29 Metal complex dye composition, photoelectric conversion element and photoelectrochemical cell

Publications (2)

Publication Number Publication Date
TW201238968A true TW201238968A (en) 2012-10-01
TWI564301B TWI564301B (en) 2017-01-01

Family

ID=46830558

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101105829A TWI564301B (en) 2011-03-11 2012-02-29 Metal complex dye composition, photoelectric transducing element and photoelectrochemical cell, and method for preparing metal complex dye

Country Status (5)

Country Link
JP (1) JP5816111B2 (en)
KR (1) KR101640974B1 (en)
CN (1) CN103403099B (en)
TW (1) TWI564301B (en)
WO (1) WO2012124483A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5636317B2 (en) * 2011-03-11 2014-12-03 富士フイルム株式会社 Metal complex dye, metal complex dye composition, photoelectric conversion element and photoelectrochemical cell
CN106573791B (en) 2014-08-05 2019-03-15 韩国化学研究院 Inorganic, organic hybrid perovskite compound film preparation method
JP6265551B2 (en) * 2015-03-17 2018-01-24 富士フイルム株式会社 Photoelectric conversion element, dye-sensitized solar cell, and dye solution
EP3272814B1 (en) 2015-03-17 2022-02-23 FUJIFILM Corporation Ruthenium complex dye, dye solution, photoelectric conversion element, and dye-sensitized solar cell

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9217811D0 (en) 1992-08-21 1992-10-07 Graetzel Michael Organic compounds
JP4874454B2 (en) * 2000-01-31 2012-02-15 富士フイルム株式会社 Photoelectric conversion element and photovoltaic cell
AU2007213123B2 (en) 2006-02-08 2011-03-10 Shimane Prefectural Government Photosensitizer dye
US20100101644A1 (en) * 2008-10-23 2010-04-29 Tripod Technology Corporation Electrolyte composition and dye-sensitized solar cell (dssc) comprising the same
CN101928469A (en) * 2009-06-18 2010-12-29 精磁科技股份有限公司 Organic dye and dye-sensitized solar cell (DSSC) using same
JP2012188401A (en) * 2011-03-11 2012-10-04 Fujifilm Corp Method of manufacturing metallic complex, and metallic complex composition
JP5636317B2 (en) * 2011-03-11 2014-12-03 富士フイルム株式会社 Metal complex dye, metal complex dye composition, photoelectric conversion element and photoelectrochemical cell

Also Published As

Publication number Publication date
KR101640974B1 (en) 2016-07-19
WO2012124483A1 (en) 2012-09-20
JP5816111B2 (en) 2015-11-18
CN103403099B (en) 2015-10-21
KR20140010971A (en) 2014-01-27
CN103403099A (en) 2013-11-20
JP2012207209A (en) 2012-10-25
TWI564301B (en) 2017-01-01

Similar Documents

Publication Publication Date Title
Gupta et al. Carbazole based A-π-D-π-A dyes with double electron acceptor for dye-sensitized solar cell
US20090293951A1 (en) Dye for dye-sensitized solar cell and dye-sensitized solar cell including the same
JP2004273272A (en) Photoelectric transducer using electrolyte liquid containing benzimidazole group compound, and dye-sensitized solar cell using the same
Cogal et al. Asymmetric phthalocyanine derivatives containing 4-carboxyphenyl substituents for dye-sensitized solar cells
JP4945873B2 (en) Semiconductor for photoelectric conversion material, photoelectric conversion element and solar cell
Cho et al. Molecular design of donor–acceptor-type cruciform dyes for efficient dyes-sensitized solar cells
TW201224002A (en) Photoelectric element, manufacturing method of photoelectric element and photosensitizer
TW201840737A (en) Sensitizing dye, sensitizing dye composition for photoelectric conversion, photoelectric conversion element using the same, and dye-sensitized solar bettery
JP5771092B2 (en) Dye, photoelectric conversion element and photoelectrochemical cell
TW200844096A (en) Noble ruthenium-type sensitizer and method of preparing the same
TW201211165A (en) Metal complex pigment, photoelectric conversion element, and photoelectrochemical cell
Akhtaruzzaman et al. Structure–property relationship of different electron donors: novel organic sensitizers based on fused dithienothiophene π-conjugated linker for high efficiency dye-sensitized solar cells
TW201116593A (en) Dye-sensitized solar cell and photoanode thereof
Park et al. Effect of regioisomeric substitution patterns on the performance of quinoxaline-based dye-sensitized solar cells
TW201238968A (en) Metal complex dye composition, photoelectric transducing element and photoelectrochemical cell, and method for preparing metal complex dye
Mane et al. Synthesis of carboxylate functionalized A 3 B and A 2 B 2 thiaporphyrins and their application in dye-sensitized solar cells
WO2006041156A1 (en) Squarylium compound, photo-electric converting material comprising the same, photo-electric converting element, and photoelectrochemical cell
Lee et al. Metal-free organic dyes with benzothiadiazole as an internal acceptor for dye-sensitized solar cells
Mikroyannidis et al. Simple sensitizers of low band gap based on 4-nitro-α-cyanostilbene prepared from a one-step reaction for efficient dye-sensitized solar cells
Jiang et al. Efficient thieno [3, 2-a] carbazole-based organic dyes for dye-sensitized solar cells
TW201144293A (en) Photoelectric transducer and photoelectrochemical cell
TW201136920A (en) Photoelectric conversion device and photoelectrochemical cell
TW201350545A (en) Sensitizing dye for photoelectric conversion, photoelectric conversion element using same, and dye-sensitized solar cell
WO2014196325A1 (en) Porphyrin complex and dye-sensitized solar cell
JP5151192B2 (en) Perylene derivative and photoelectric conversion element using the same

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees