TWI564301B - Metal complex dye composition, photoelectric transducing element and photoelectrochemical cell, and method for preparing metal complex dye - Google Patents
Metal complex dye composition, photoelectric transducing element and photoelectrochemical cell, and method for preparing metal complex dye Download PDFInfo
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- TWI564301B TWI564301B TW101105829A TW101105829A TWI564301B TW I564301 B TWI564301 B TW I564301B TW 101105829 A TW101105829 A TW 101105829A TW 101105829 A TW101105829 A TW 101105829A TW I564301 B TWI564301 B TW I564301B
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- Prior art keywords
- formula
- metal complex
- group
- complex dye
- represented
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- 239000000434 metal complex dye Substances 0.000 title claims description 170
- 239000000203 mixture Substances 0.000 title claims description 92
- 238000000034 method Methods 0.000 title description 92
- 230000002463 transducing effect Effects 0.000 title 1
- 239000000975 dye Substances 0.000 claims description 78
- 238000006243 chemical reaction Methods 0.000 claims description 64
- 125000000217 alkyl group Chemical group 0.000 claims description 62
- 125000000304 alkynyl group Chemical group 0.000 claims description 60
- 239000000049 pigment Substances 0.000 claims description 49
- -1 isoselenocyano Chemical group 0.000 claims description 48
- 239000003446 ligand Substances 0.000 claims description 43
- 125000003545 alkoxy group Chemical group 0.000 claims description 41
- 150000003839 salts Chemical class 0.000 claims description 39
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 36
- 150000002500 ions Chemical class 0.000 claims description 31
- 150000004696 coordination complex Chemical class 0.000 claims description 29
- 230000001235 sensitizing effect Effects 0.000 claims description 29
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 26
- 125000004434 sulfur atom Chemical group 0.000 claims description 25
- 229910052717 sulfur Inorganic materials 0.000 claims description 24
- 230000002378 acidificating effect Effects 0.000 claims description 23
- 238000004128 high performance liquid chromatography Methods 0.000 claims description 20
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical group [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 18
- 229910052711 selenium Inorganic materials 0.000 claims description 18
- 125000003118 aryl group Chemical group 0.000 claims description 13
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 13
- 125000001072 heteroaryl group Chemical group 0.000 claims description 12
- 125000000623 heterocyclic group Chemical group 0.000 claims description 12
- 125000004429 atom Chemical group 0.000 claims description 10
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- OLSOYUUAJUQDIO-UHFFFAOYSA-N n-isothiocyanato-1-oxomethanimine Chemical compound O=C=NN=C=S OLSOYUUAJUQDIO-UHFFFAOYSA-N 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 114
- 239000010419 fine particle Substances 0.000 description 88
- 239000010410 layer Substances 0.000 description 63
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 48
- 239000002904 solvent Substances 0.000 description 41
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 39
- 239000000243 solution Substances 0.000 description 38
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 36
- 150000001875 compounds Chemical class 0.000 description 36
- 238000010438 heat treatment Methods 0.000 description 35
- 239000006185 dispersion Substances 0.000 description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 28
- 239000000463 material Substances 0.000 description 24
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 22
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- 238000002360 preparation method Methods 0.000 description 22
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- 238000001179 sorption measurement Methods 0.000 description 20
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 18
- 108091008695 photoreceptors Proteins 0.000 description 18
- 239000011521 glass Substances 0.000 description 17
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 16
- 239000007788 liquid Substances 0.000 description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 14
- 229910052799 carbon Inorganic materials 0.000 description 14
- 239000000178 monomer Substances 0.000 description 14
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 14
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 14
- 238000010521 absorption reaction Methods 0.000 description 13
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 238000005259 measurement Methods 0.000 description 11
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 11
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- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 9
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 229910001413 alkali metal ion Inorganic materials 0.000 description 8
- 239000003960 organic solvent Substances 0.000 description 8
- 239000004408 titanium dioxide Substances 0.000 description 8
- VZXTWGWHSMCWGA-UHFFFAOYSA-N 1,3,5-triazine-2,4-diamine Chemical compound NC1=NC=NC(N)=N1 VZXTWGWHSMCWGA-UHFFFAOYSA-N 0.000 description 7
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 7
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 7
- 229910052740 iodine Inorganic materials 0.000 description 7
- 239000011630 iodine Substances 0.000 description 7
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 230000005525 hole transport Effects 0.000 description 6
- 239000012046 mixed solvent Substances 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 6
- 238000010526 radical polymerization reaction Methods 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 125000001424 substituent group Chemical group 0.000 description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 6
- 229910001887 tin oxide Inorganic materials 0.000 description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 5
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical group C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 229910052801 chlorine Inorganic materials 0.000 description 5
- 238000010668 complexation reaction Methods 0.000 description 5
- 238000003795 desorption Methods 0.000 description 5
- 150000002148 esters Chemical class 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 238000004895 liquid chromatography mass spectrometry Methods 0.000 description 5
- 229910017604 nitric acid Inorganic materials 0.000 description 5
- 239000002861 polymer material Substances 0.000 description 5
- 238000006116 polymerization reaction Methods 0.000 description 5
- 238000003980 solgel method Methods 0.000 description 5
- 238000003786 synthesis reaction Methods 0.000 description 5
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000002202 Polyethylene glycol Substances 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- XMBWDFGMSWQBCA-UHFFFAOYSA-M iodide Chemical compound [I-] XMBWDFGMSWQBCA-UHFFFAOYSA-M 0.000 description 4
- ZCSHNCUQKCANBX-UHFFFAOYSA-N lithium diisopropylamide Chemical compound [Li+].CC(C)[N-]C(C)C ZCSHNCUQKCANBX-UHFFFAOYSA-N 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 150000002825 nitriles Chemical class 0.000 description 4
- 125000005496 phosphonium group Chemical group 0.000 description 4
- 229920001223 polyethylene glycol Polymers 0.000 description 4
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 description 4
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- OISVCGZHLKNMSJ-UHFFFAOYSA-N 2,6-dimethylpyridine Chemical compound CC1=CC=CC(C)=N1 OISVCGZHLKNMSJ-UHFFFAOYSA-N 0.000 description 3
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- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 3
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- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
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- 229910010413 TiO 2 Inorganic materials 0.000 description 3
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- HSZCZNFXUDYRKD-UHFFFAOYSA-M lithium iodide Chemical compound [Li+].[I-] HSZCZNFXUDYRKD-UHFFFAOYSA-M 0.000 description 3
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- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- XFCMNSHQOZQILR-UHFFFAOYSA-N 2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCOC(=O)C(C)=C XFCMNSHQOZQILR-UHFFFAOYSA-N 0.000 description 2
- INQDDHNZXOAFFD-UHFFFAOYSA-N 2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOC(=O)C=C INQDDHNZXOAFFD-UHFFFAOYSA-N 0.000 description 2
- NEAQRZUHTPSBBM-UHFFFAOYSA-N 2-hydroxy-3,3-dimethyl-7-nitro-4h-isoquinolin-1-one Chemical compound C1=C([N+]([O-])=O)C=C2C(=O)N(O)C(C)(C)CC2=C1 NEAQRZUHTPSBBM-UHFFFAOYSA-N 0.000 description 2
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- 150000001335 aliphatic alkanes Chemical class 0.000 description 2
- 150000001346 alkyl aryl ethers Chemical class 0.000 description 2
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- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- LLZRNZOLAXHGLL-UHFFFAOYSA-J titanic acid Chemical compound O[Ti](O)(O)O LLZRNZOLAXHGLL-UHFFFAOYSA-J 0.000 description 1
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N trifluoromethane acid Natural products FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 125000006617 triphenylamine group Chemical group 0.000 description 1
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 239000011882 ultra-fine particle Substances 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 229920001567 vinyl ester resin Polymers 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- NLVXSWCKKBEXTG-UHFFFAOYSA-N vinylsulfonic acid Chemical compound OS(=O)(=O)C=C NLVXSWCKKBEXTG-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Description
本發明是關於對溶劑的溶解性高的金屬錯合物色素組成物,及光電轉換效率高的光電轉換元件及光電化學電池。 The present invention relates to a metal complex dye composition having high solubility in a solvent, and a photoelectric conversion element and a photoelectrochemical cell having high photoelectric conversion efficiency.
光電轉換元件可用於各種光感測器、影印機、光電化學電池(例如太陽電池)等。光電轉換元件中,使用金屬的光電轉換元件、使用半導體的光電轉換元件、使用有機顏料或色素的光電轉換元件,或將該些加以組合成的光電轉換元件等各種方式已實用化。其中,利用永不枯竭的太陽能的太陽電池不需要燃料而利用無盡的清潔能量,其正式的實用化大受期待。其中,矽系太陽電池自以前開始一直在進行研開,亦有各國政策的注重,而得到了普及。但矽為無機材料,產量及分子修飾自然有極限。 The photoelectric conversion element can be used for various photo sensors, photocopiers, photoelectrochemical cells (such as solar cells), and the like. Among the photoelectric conversion elements, various methods such as a metal photoelectric conversion element, a photoelectric conversion element using a semiconductor, a photoelectric conversion element using an organic pigment or a dye, or a photoelectric conversion element in which these are combined are put into practical use. Among them, a solar cell that uses solar energy that is never exhausted does not require fuel and uses endless clean energy, and its formal practical use is expected. Among them, the lanthanide solar cells have been under research since the beginning, and they have also been popularized by the policies of various countries. However, as an inorganic material, the yield and molecular modification naturally have limits.
因此,色素增感型太陽電池的研究正被全力進行。特別是,瑞士的洛桑工科大學的Graetzel等人開發出在多孔氧化鈦薄膜的表面固定包釕錯合物的色素而成的色素增感型太陽電池,其實現非晶矽水準的轉換效率。藉此,色素增感型太陽電池一躍而受到全世界研究者的關注。 Therefore, research on dye-sensitized solar cells is being carried out with all efforts. In particular, Graetzel et al. of the University of Technology in Lausanne, Switzerland, developed a dye-sensitized solar cell in which a pigment of a ruthenium complex was immobilized on the surface of a porous titanium oxide film, and the conversion efficiency of the amorphous ruthenium level was achieved. In this way, the dye-sensitized solar cell has attracted the attention of researchers all over the world.
專利文獻1中記載,應用此技術,使用以釕錯合物色素增感的半導體微粒的色素增感光電轉換元件。另外有報告用廉價的有機色素作為增感劑的光電轉換元件,但都不能說是轉換效率高的光電轉換元件。 Patent Document 1 discloses that a dye-sensitized photoelectric conversion element using semiconductor fine particles sensitized with a ruthenium complex dye is used. In addition, there has been reported a photoelectric conversion element using a cheap organic dye as a sensitizer, but it cannot be said that it is a photoelectric conversion element having high conversion efficiency.
因此提出了使特定結構的光增感色素吸附半導體微粒 以提高光電轉換效率的技術(例如參照專利文獻2、3)。但專利文獻2、3記載的光增感色素(純品)由於對溶劑的溶解性低,故在一定條件下色素對半導體微粒的吸附量不足,在光電轉換效率方面說不上充分,因此色素的使用量大或溶解時需要長時間,依生產性的觀點有所不足。 Therefore, it has been proposed to adsorb semiconductor particles by a specific structure of photosensitizing dyes. A technique for improving photoelectric conversion efficiency (for example, refer to Patent Documents 2 and 3). However, since the photosensitizing dye (pure product) described in Patent Documents 2 and 3 has low solubility in a solvent, the amount of adsorption of the dye to the semiconductor fine particles is insufficient under certain conditions, and the photoelectric conversion efficiency is not sufficient. Therefore, the use of the dye is insufficient. It takes a long time to be large or dissolved, and it is insufficient in terms of productivity.
[專利文獻1]美國專利第5463057號說明書 [Patent Document 1] US Patent No. 5,463,057
[專利文獻2]日本專利第4576494號公報 [Patent Document 2] Japanese Patent No. 4576494
[專利文獻3]日本專利特開2001-291534號公報 [Patent Document 3] Japanese Patent Laid-Open Publication No. 2001-291534
本發明的課題在提供對溶劑的溶解性高的金屬錯合物色素組成物,以及光電轉換效率高的光電轉換元件及光電化學電池。另外,本發明的課題在於提供對溶劑的溶解性高的金屬錯合物色素的製造方法。 An object of the present invention is to provide a metal complex dye composition having high solubility in a solvent, and a photoelectric conversion element and a photoelectrochemical cell having high photoelectric conversion efficiency. Further, an object of the present invention is to provide a method for producing a metal complex dye having high solubility in a solvent.
本發明者等人反複深入研究後發現,含特定配位基的金屬錯合物色素在溶劑中的溶解性高,而可提高此色素在半導體微粒上的吸附量,故可提供轉換效率高的光電轉換元件及光電化學電池。本發明是基於此見解而完成。 As a result of intensive studies, the inventors of the present invention have found that a metal complex dye containing a specific ligand has high solubility in a solvent, and can increase the amount of adsorption of the pigment on the semiconductor fine particles, thereby providing high conversion efficiency. Photoelectric conversion element and photoelectrochemical cell. The present invention has been completed based on this finding.
根據本發明,提供以下的發明。 According to the present invention, the following invention is provided.
<1>一種金屬錯合物色素組成物,包括:下述通式(1)所示的金屬錯合物色素,以及下述通式(5)所示的金屬錯合物色素及/或下述通式(6)所示的金屬錯合物色素;按HPLC(高效液相層析法)的254nm檢測的面積計, 通式(5)所示的金屬錯合物色素及通式(6)所示的金屬錯合物色素的含有率合計為0.5~5%。 <1> A metal complex dye composition comprising a metal complex dye represented by the following formula (1), and a metal complex dye represented by the following formula (5) and/or a metal complex dye represented by the formula (6); based on an area of 254 nm detected by HPLC (High Performance Liquid Chromatography), The content ratio of the metal complex dye represented by the formula (5) and the metal complex dye represented by the formula (6) is 0.5 to 5% in total.
M1(LL1)m1(LL2)m2(Z1)2‧(CI1)m3 通式(1)[通式(1)中,M1表示金屬原子,LL1為下述通式(2)所示的2牙配位基,LL2為下述通式(3)所示的2牙配位基;m1表示1,m2表示1;Z1表示配位基,為選自異硫氰基、異氰酸基及異硒氰基的至少1種;CI1表示需要對離子來中和電荷時的對離子,m3為0以上的整數。] M 1 (LL 1 ) m1 (LL 2 ) m2 (Z 1 ) 2 ‧(CI 1 ) m3 Formula (1) [In the formula (1), M 1 represents a metal atom, and LL 1 is a formula ( 2) The bidentate ligand shown, LL 2 is a bidentate ligand represented by the following formula (3); m1 represents 1, m2 represents 1; and Z 1 represents a ligand selected from the group consisting of isosulfur At least one of a cyano group, an isocyanate group, and an isoselenocyano group; CI 1 represents a counter ion when a charge is required to neutralize a charge, and m3 is an integer of 0 or more. ]
M1(LL1)m1(LL2)m2(Z1)(CN)‧(CI1)m3 通式(5)[通式(5)中,M1、LL1、LL2、Z1、CI1、m1、m2及m3的含義與通式(1)中的相同。] M 1 (LL 1 ) m1 (LL 2 ) m2 (Z 1 ) (CN) ‧ (CI 1 ) m3 Formula (5) [In the formula (5), M 1 , LL 1 , LL 2 , Z 1 , The meanings of CI 1 , m1, m2 and m3 are the same as those in the formula (1). ]
M1(LL1)m1(LL2)m2(CN)2‧(CI1)m3 通式(6) M 1 (LL 1 ) m1 (LL 2 ) m2 (CN) 2 ‧(CI 1 ) m3 Formula (6)
[通式(6)中,M1、LL1、LL2、Z1、CI1、m1、m2及m3的含義與通式(1)中的相同。] [In the formula (6), M 1 , LL 1 , LL 2 , Z 1 , CI 1 , m1, m2 and m3 have the same meanings as in the formula (1). ]
<2>如<1>所述之金屬錯合物色素組成物,其中通式(1)中的LL2由下述通式(7)表示。 <2> The metal complex dye composition according to <1>, wherein LL 2 in the formula (1) is represented by the following formula (7).
<3>如<2>所述之金屬錯合物色素組成物,其中通式(7)中的X1及X2為硫原子。 <3> The metal complex dye composition according to <2>, wherein X 1 and X 2 in the formula (7) are a sulfur atom.
<4>如<1>~<3>中任一項所述之金屬錯合物色素組成物,其中通式(1)所示金屬錯合物色素由下述通式(8)表示。 The metal complex dye composition according to any one of <1> to <3>, wherein the metal complex dye represented by the formula (1) is represented by the following formula (8).
<5>如<1>~<4>中任一項所述之金屬錯合物色素組成物,其中通式(5)所示的金屬錯合物色素由下述通式(9)表示,通式(6)所示的金屬錯合物色素由下述通式(10)表示。 The metal complex dye composition according to any one of the above-mentioned items (5), wherein the metal complex dye represented by the formula (5) is represented by the following formula (9). The metal complex dye represented by the formula (6) is represented by the following formula (10).
<6>如<1>~<5>中任一項所述之金屬錯合物色素組成物,其中通式(5)所示的金屬錯合物色素由下述通式(11)表示,通式(6)所示的金屬錯合物色素由下述通式(12)表示。 The metal complex dye composition according to any one of the above aspects, wherein the metal complex dye represented by the formula (5) is represented by the following formula (11). The metal complex dye represented by the formula (6) is represented by the following formula (12).
<7>一種下述通式(1)的金屬錯合物色素的製造方法,包括:藉由外部加熱使包含下述通式(13)的金屬錯合物色素與下述通式(14)的化合物的混合液的溫度上升。 <7> A method for producing a metal complex dye of the following formula (1), comprising: a metal complex dye comprising the following formula (13) by external heating and a general formula (14) The temperature of the mixture of compounds rises.
M1(LL1)m1(LL2)m2(Z2)m4‧(CI1)m5 通式(13)[通式(13)中,M1、LL1、LL2、CI1、m1及m2的含義與通式(1)中的相同,Z2為1牙或2牙配位基,m4表示1~2的整數,Z2為1牙配位基時m4表示2,Z2為2牙配位基時m4表示1,m5為0以上的整數。] M 1 (LL 1) m1 ( LL 2) m2 (Z 2) m4 ‧ (CI 1) m5 in formula (13) [in the formula (13), M 1, LL 1, LL 2, CI 1, m1 and The meaning of m2 is the same as in the formula (1), Z 2 is a 1-dentate or 2-dentate ligand, m4 represents an integer of 1 to 2, and when Z 2 is a dental ligand, m4 represents 2 and Z 2 is 2. In the case of a dental ligand, m4 represents 1, and m5 is an integer of 0 or more. ]
M11QCN 通式(14)[通式(14)中,M11表示無機或有機的銨離子、質子或鹼金屬離子,Q表示硫原子、氧原子或硒原子。] M 11 QCN Formula (14) [In the formula (14), M 11 represents an inorganic or organic ammonium ion, a proton or an alkali metal ion, and Q represents a sulfur atom, an oxygen atom or a selenium atom. ]
M1(LL1)m1(LL2)m2(Z1)2‧(CI1)m3 通式(1)[通式(1)中,M1表示金屬原子,LL1為下述通式(2)所示的2牙配位基,LL2為下述通式(3)所示的2牙配位基;m1表示1,m2表示1,m3為0以上的整數;Z1表示配位基,為選自異硫氰基、異氰酸基及異硒氰基的至少1種;CI1表示需要對離子來中和電荷時的對離子。] M 1 (LL 1 ) m1 (LL 2 ) m2 (Z 1 ) 2 ‧(CI 1 ) m3 Formula (1) [In the formula (1), M 1 represents a metal atom, and LL 1 is a formula ( 2) The bidentate ligand shown, LL 2 is a bidentate ligand represented by the following formula (3); m1 represents 1, m2 represents 1, m3 is an integer of 0 or more; and Z 1 represents a coordination group. The group is at least one selected from the group consisting of isothiocyanato, isocyanate, and isoselenocyano; CI 1 represents a counter ion when it is necessary to neutralize the charge with ions. ]
<8>如<7>所述之金屬錯合物色素的製造方法,其中通式(1)中的LL2由下述通式(7)表示。 <8> The method for producing a metal complex dye according to <7>, wherein LL 2 in the formula (1) is represented by the following formula (7).
<9>如<8>所述之金屬錯合物色素的製造方法,其中通式(7)中的X1及X2為硫原子。 <9> The method for producing a metal complex dye according to <8>, wherein X 1 and X 2 in the formula (7) are a sulfur atom.
<10>如<7>~<9>中任一項所述之金屬錯合物色素的製造方法,其中通式(1)由下述通式(8)表示,通式(13)由下述通式(15)表示,通式(14)由下述通式(16)表示。 The method for producing a metal complex dye according to any one of <7>, wherein the general formula (1) is represented by the following general formula (8), and the general formula (13) is The general formula (15) shows that the general formula (14) is represented by the following general formula (16).
<11>如<7>~<9>中任一項所述之金屬錯合物色素的製造方法,其中通式(1)由下述通式(17)表示,通式(13)由下述通式(18)表示,通式(14)由下述通式(19)表示。 The method for producing a metal complex dye according to any one of <7>, wherein the formula (1) is represented by the following formula (17), and the formula (13) is The general formula (18) shows that the general formula (14) is represented by the following general formula (19).
<12>一種光電轉換元件,其使用如<1>~<6>中任一項所述之金屬錯合物色素組成物作為增感色素。 <12> A photoelectric conversion element using the metal complex dye composition according to any one of <1> to <6> as a sensitizing dye.
<13>一種光電轉換元件,其使用藉由如<7>~<11>中任一項所述之金屬錯合物色素的製造方法而製造的金屬錯合物色素。 <13> A metal complex dye produced by the method for producing a metal complex dye according to any one of <7> to <11>.
<14>一種光電化學電池,其具備如<12>~<13>中任一項所述之光電轉換元件。 <14> A photoelectrochemical cell according to any one of <12> to <13>.
根據本發明,可提供轉換效率高、耐久性佳的光電轉換元件及光電化學電池。 According to the present invention, a photoelectric conversion element and a photoelectrochemical cell having high conversion efficiency and excellent durability can be provided.
本發明的上述及其他特徵及優點可適當參照隨附的圖式,藉由下述記載而更加明白。 The above and other features and advantages of the present invention will become more apparent from the appended claims appended claims.
本發明者等反複深入研究後發現,含特定配位基的金 屬錯合物色素對溶劑的溶解性高,故可提高此色素在半導體微粒上的吸附量,而可提供轉換效率高的光電轉換元件及光電化學電池。本發明是基於此見解而完成。 The inventors of the present invention have repeatedly conducted intensive studies and found that gold containing a specific ligand Since the complex compound dye has high solubility in a solvent, the amount of adsorption of the dye on the semiconductor fine particles can be increased, and a photoelectric conversion element and a photoelectrochemical cell having high conversion efficiency can be provided. The present invention has been completed based on this finding.
以下參照圖1的示意性剖面圖來說明本發明的光電轉換元件的較佳實施形態。 A preferred embodiment of the photoelectric conversion element of the present invention will be described below with reference to the schematic cross-sectional view of Fig. 1.
如圖1所示,光電轉換元件10包含導電支撐體1及其上依序配置的感光體層2、電荷遷移體層3及對電極4。導電支撐體1與感光體層2構成受光電極5。感光體層2具有半導體微粒22與增感色素(以下亦簡稱色素)21。增感色素21的至少一部分吸附於半導體微粒22(增感色素21為吸附平衡狀態,一部分可存在於電荷遷移體層3)。電荷遷移體層3的功能例如是作為電洞傳輸層。形成有感光體層2的導電支撐體1在光電轉換元件10中是作為作用電極。利用外部電路6使此光電轉換元件10工作,即可發揮光電化學電池100的作用。 As shown in FIG. 1, the photoelectric conversion element 10 includes a conductive support 1 and a photoreceptor layer 2, a charge transport layer 3, and a counter electrode 4 which are sequentially disposed thereon. The conductive support 1 and the photoreceptor layer 2 constitute a light receiving electrode 5. The photoreceptor layer 2 has semiconductor fine particles 22 and a sensitizing dye (hereinafter also referred to as a dye) 21 . At least a part of the sensitizing dye 21 is adsorbed to the semiconductor fine particles 22 (the sensitizing dye 21 is in an adsorption equilibrium state, and a part thereof may be present in the charge transport layer 3). The function of the charge transport layer 3 is, for example, as a hole transport layer. The conductive support 1 on which the photoreceptor layer 2 is formed serves as a working electrode in the photoelectric conversion element 10. By operating the photoelectric conversion element 10 by the external circuit 6, the photoelectrochemical cell 100 can function.
上述受光電極5包含導電支撐體1,以及塗在導電支撐體1上且半導體微粒22吸附有增感色素21的感光體層2(半導體膜)。入射至感光體層2(半導體膜)的光會激發色素。激發色素具有高能量電子。此電子自增感色素21傳向半導體微粒22的導帶,再擴散至導電支撐體1。此時增感色素21的分子成為氧化物。電極上的電子藉外部電路6而工作,並回復成氧化物,而發揮光電化學電池100的作用。此時,受光電極5發揮作為此電池的負極的作用。 The light-receiving electrode 5 includes a conductive support 1 and a photoreceptor layer 2 (semiconductor film) coated on the conductive support 1 and having the sensitizing dye 21 adsorbed on the semiconductor fine particles 22. Light incident on the photoreceptor layer 2 (semiconductor film) excites the pigment. The excitation pigment has high energy electrons. This electron self-sensitizing dye 21 is transmitted to the conduction band of the semiconductor fine particles 22 and then diffused to the conductive support 1 . At this time, the molecule of the sensitizing dye 21 becomes an oxide. The electrons on the electrodes operate by the external circuit 6 and return to oxide, thereby functioning as the photoelectrochemical cell 100. At this time, the light receiving electrode 5 functions as a negative electrode of the battery.
上述感光體層2由包含吸附後述色素的半導體微粒22 的層的多孔質半導體層構成。此色素可為部分在電解質中解離的色素等。感光體層2依照目的設計,含多層結構。 The photoreceptor layer 2 is composed of semiconductor fine particles 22 containing a dye which adsorbs a later-described pigment. The layer is composed of a porous semiconductor layer. This pigment may be a pigment or the like partially dissociated in the electrolyte. The photoreceptor layer 2 is designed according to the purpose and has a multilayer structure.
如上所述,感光體層2包含吸附了特定色素的半導體微粒22,因此受光感光度高,並且在用作光電化學電池100時可得高光電轉換效率,且具有高耐久性。 As described above, the photoreceptor layer 2 contains the semiconductor fine particles 22 to which the specific dye is adsorbed, and thus the light-receiving sensitivity is high, and when used as the photoelectrochemical cell 100, high photoelectric conversion efficiency is obtained, and high durability is obtained.
本發明的金屬錯合物色素組成物包含:下述通式(1)所示的金屬錯合物色素、以及下述通式(5)所示的金屬錯合物色素及/或下述通式(6)所示的金屬錯合物色素。 The metal complex dye composition of the present invention comprises a metal complex dye represented by the following formula (1), a metal complex dye represented by the following formula (5), and/or the following A metal complex dye represented by the formula (6).
通式(5)所示的金屬錯合物色素及通式(6)所示者的含有率,按HPLC的254nm檢測的面積計,合計為0.5~5%。 The content of the metal complex dye represented by the formula (5) and the content represented by the formula (6) is 0.5 to 5% in total based on the area of 254 nm detected by HPLC.
M1(LL1)m1(LL2)m2(Z1)2‧(CI1)m3 通式(1)[通式(1)中M1表金屬原子,LL1為下述通式(2)所示2牙配位基,LL2為下述通式(3)所示2牙配位基;m1及m2均為1,m3為0以上的整數;Z1表配位基,為選自異硫氰基、異氰酸基及異硒氰基的至少1種,Z1可彼此相同或不同,較佳為相同;CI1表示需對離子中和電荷時的對離子。] M 1 (LL 1 ) m1 (LL 2 ) m2 (Z 1 ) 2 ‧(CI 1 ) m3 Formula (1) [M 1 represents a metal atom in the formula (1), and LL 1 is a formula (2) ) The 2-dentate ligand shown, LL 2 is a 2-dentate ligand represented by the following formula (3); m1 and m2 are both 1, m3 is an integer of 0 or more; and Z 1 is a ligand; From at least one of isothiocyanato, isocyanate, and isoselenocyano, Z 1 may be the same or different from each other, preferably the same; CI 1 represents a counter ion when the charge is neutralized. ]
M1(LL1)m1(LL2)m2(Z1)(CN)‧(CI1)m3 通式(5)[通式(5)中,M1、LL1、LL2、Z1、CI1、m1、m2及m3的含義與通式(1)中的相同。] M 1 (LL 1 ) m1 (LL 2 ) m2 (Z 1 ) (CN) ‧ (CI 1 ) m3 Formula (5) [In the formula (5), M 1 , LL 1 , LL 2 , Z 1 , The meanings of CI 1 , m1, m2 and m3 are the same as those in the formula (1). ]
M1(LL1)m1(LL2)m2(CN)2‧(CI1)m3 通式(6)[通式(6)中,M1、LL1、LL2、Z1、CI1、m1、m2及m3的 含義與通式(1)中的相同。] M 1 (LL 1 ) m1 (LL 2 ) m2 (CN) 2 ‧(CI 1 ) m3 Formula (6) [In the formula (6), M 1 , LL 1 , LL 2 , Z 1 , CI 1 , The meanings of m1, m2 and m3 are the same as those in the formula (1). ]
M1表示金屬原子。M1較佳為可4配位或6配位的金屬,更佳為釕、鐵、鋨、銅、鎢、鉻、鉬、鎳、鈀、鉑、鈷、銥、銠、錸、錳或鋅。特佳為釕、鋨、鐵或銅,最佳為釕。釕中較佳為2價釕。 M 1 represents a metal atom. M 1 is preferably a metal capable of 4 or 6 coordination, more preferably ruthenium, iron, osmium, copper, tungsten, chromium, molybdenum, nickel, palladium, platinum, cobalt, rhodium, ruthenium, osmium, manganese or zinc. . It is especially good for 钌, 锇, iron or copper. It is preferably a price of 2.
配位基LL1為由下述通式(2)表示的2牙。表示配位基LL1的數量的m1為1。 The ligand LL 1 is a 2-dental represented by the following general formula (2). M1 indicating the number of the ligands LL 1 is 1.
通式(2)中R11~R14及R21~R24獨立表示酸性基或其鹽或氫原子,R11~R14及R21~R24可相同亦可不同。R11~R14及R21~R24可例舉:氫原子、酸性基(如羧基、磺酸基、羥基、羥肟酸基(碳數較佳為1~20、例如-CONHOH、-CONCH3OH等)、磷醯基(例如-OP(O)(OH)2等)或膦醯基(如-P(O)(OH)2等)等)或該些的鹽。酸性基可經連結基而結合,經連結基將上述羧基、磺酸基、羥基、羥肟酸基等酸性基結合而成的基團亦包括在酸性基中。R11~R14及R21~R24中的至少一個為酸性基或其鹽。在R11~R14及R21~R24表酸性基時,依電子注入的觀點,酸性基較佳為羧基、磺酸基或膦醯基等酸性基或該些的鹽,羧基或膦醯基或該些的鹽更佳,羧 基或其鹽尤佳。使R11~R14及R21~R24為酸性基或其鹽或氫原子,即可使金屬錯合物色素有效吸附於半導體微粒。 In the general formula (2), R 11 to R 14 and R 21 to R 24 each independently represent an acidic group or a salt thereof or a hydrogen atom, and R 11 to R 14 and R 21 to R 24 may be the same or different. R 11 to R 14 and R 21 to R 24 may, for example, be a hydrogen atom or an acidic group (e.g., a carboxyl group, a sulfonic acid group, a hydroxyl group or a hydroxamic acid group (the carbon number is preferably from 1 to 20, for example, -CONHOH, -CONCH). 3 OH or the like, a phosphonium group (for example, -OP(O)(OH) 2 or the like) or a phosphonium group (such as -P(O)(OH) 2 or the like), or the like. The acidic group may be bonded via a linking group, and a group obtained by combining an acidic group such as a carboxyl group, a sulfonic acid group, a hydroxyl group or a hydroxamic acid group via a linking group is also included in the acidic group. At least one of R 11 to R 14 and R 21 to R 24 is an acidic group or a salt thereof. When R 11 to R 14 and R 21 to R 24 are acidic groups, the acidic group is preferably an acidic group such as a carboxyl group, a sulfonic acid group or a phosphonium group or a salt thereof, or a carboxyl group or a phosphonium group, from the viewpoint of electron injection. The base or the salts are more preferred, and a carboxyl group or a salt thereof is particularly preferred. When R 11 to R 14 and R 21 to R 24 are an acidic group or a salt thereof or a hydrogen atom, the metal complex dye can be efficiently adsorbed to the semiconductor fine particles.
配位基LL2為下述通式(3)所示的2牙配位基。表示配位基LL2的數量的m2表示1。雙鍵可為E式亦可為Z式。 The ligand LL 2 is a bidentate ligand represented by the following formula (3). M2 indicating the number of ligands LL 2 represents 1. The double key can be either E or Z.
通式(3)中n1、n2獨立表示0~3的整數。n1、n2較佳為0~3,0~1更佳。Y1、Y2獨立表示氫原子或下述通式(4)所示的雜芳基。Ar1及Ar2獨立表示通式(4)所示的雜芳基。 In the general formula (3), n1 and n2 independently represent an integer of 0 to 3. Preferably, n1 and n2 are 0 to 3, and 0 to 1 is more preferable. Y 1 and Y 2 independently represent a hydrogen atom or a heteroaryl group represented by the following formula (4). Ar 1 and Ar 2 independently represent a heteroaryl group represented by the formula (4).
通式(4)中R31~R33獨立表示氫原子、烷基、烷氧基或炔基,R31~R33中至少1個為烷基、烷氧基或炔基,烷基、炔基更佳,炔基尤佳。該些基可為直鏈或分支,碳數較佳2~15,3~12更佳,4~8尤佳。使用具有該些疏水取代基的金屬錯合物色素組成物而使其中的色素吸附於半導體微粒時,可妨礙電荷遷移體層中的電解質中存在的水接近,而可抑制色素自半導體微粒脫附。若疏水取代基的碳數過多,則不僅妨礙水接近,而且亦妨礙電解質中的例如碘等的接近,使利用氧化還原系統的還原無法順利進行。 In the formula (4), R 31 to R 33 independently represent a hydrogen atom, an alkyl group, an alkoxy group or an alkynyl group, and at least one of R 31 to R 33 is an alkyl group, an alkoxy group or an alkynyl group, and an alkyl group or an alkyne group. More preferred, alkynyl is especially preferred. The bases may be linear or branched, and the carbon number is preferably 2 to 15, 3 to 12 is better, and 4 to 8 is particularly preferred. When the metal complex dye composition having such a hydrophobic substituent is used to adsorb the dye therein to the semiconductor fine particles, the water present in the electrolyte in the charge transport layer can be prevented from approaching, and the pigment can be inhibited from desorbing from the semiconductor fine particles. When the number of carbon atoms of the hydrophobic substituent is too large, it not only hinders the approach of water, but also hinders the proximity of, for example, iodine in the electrolyte, and the reduction by the redox system cannot be smoothly performed.
Y1或Y2由通式(4)表示時,較佳是Y1或Y2與吡啶環共軛且Ar1及Ar2與吡啶環共軛。伴隨著通式(4)所示的Y1或Y2的供電子性,該些基發生共軛,使最高佔據分子軌域 (HOMO)位準向金屬錯合物色素中的金屬原子M1提高,而可吸收長波長區域的光(長波化)。通式(4)中X為硫原子、氧原子、硒原子或NR4,R4為氫原子、烷基、芳基或雜環基。通式(4)中的X依對親核物種的穩定性、氧化難易性及合成難易度的觀點,較佳為硫原子或硒原子,更佳為硫原子。使配位基LL2為此種結構,即可發揮出抑制因色素脫附所引起的電池性能降低以及長波化的效果。 When Y 1 or Y 2 is represented by the formula (4), it is preferred that Y 1 or Y 2 is conjugated to a pyridine ring and Ar 1 and Ar 2 are conjugated to a pyridine ring. Along with the electron donating property of Y 1 or Y 2 represented by the general formula (4), the groups are conjugated such that the highest occupied molecular orbital (HOMO) position is aligned to the metal atom M 1 in the metal complex dye. It is improved, and it can absorb light in a long wavelength region (long wave). In the formula (4), X is a sulfur atom, an oxygen atom, a selenium atom or NR 4 , and R 4 is a hydrogen atom, an alkyl group, an aryl group or a heterocyclic group. The X in the general formula (4) is preferably a sulfur atom or a selenium atom, more preferably a sulfur atom, from the viewpoints of stability, oxidative easiness, and ease of synthesis of the nucleophilic species. When the ligand LL 2 has such a structure, it is possible to exhibit an effect of suppressing deterioration in battery performance and long-wavelength due to desorption of the dye.
配位基LL2較佳由下述通式(7)表示,其中R41~R43及R51~R53獨立表示氫原子、烷基、烷氧基或炔基。R41~R43中至少1個為烷基、烷氧基或炔基。R51~R53中至少1個為烷基、烷氧基或炔基。X1、X2各自獨立為硫原子、氧原子、硒原子或NR7,R7為氫原子、烷基、芳基或雜環基。雙鍵可為E或Z型。R41~R43較佳為烷基、炔基。R51~R53較佳為烷基、炔基。通式(7)中X1、X2較佳為硫原子、硒原子,硫原子更佳。如配位基LL2為此結構,則通式(3)的n1及n2為1時與為2以上時相較,可得難以氧化且穩定的效果。 The ligand LL 2 is preferably represented by the following formula (7): wherein R 41 to R 43 and R 51 to R 53 independently represent a hydrogen atom, an alkyl group, an alkoxy group or an alkynyl group. At least one of R 41 to R 43 is an alkyl group, an alkoxy group or an alkynyl group. At least one of R 51 to R 53 is an alkyl group, an alkoxy group or an alkynyl group. X 1 and X 2 are each independently a sulfur atom, an oxygen atom, a selenium atom or NR 7 , and R 7 is a hydrogen atom, an alkyl group, an aryl group or a heterocyclic group. The double button can be E or Z type. R 41 to R 43 are preferably an alkyl group or an alkynyl group. R 51 to R 53 are preferably an alkyl group or an alkynyl group. In the general formula (7), X 1 and X 2 are preferably a sulfur atom or a selenium atom, and a sulfur atom is more preferable. When the ligand LL 2 has such a structure, when n1 and n2 of the general formula (3) are 1, the effect of being difficult to oxidize and stable can be obtained as compared with the case of being 2 or more.
上述通式(1)所示金屬錯合物色素較佳由通式(8)表示,R61、R62獨立表烷基、烷氧基或炔基,A1、A2獨立表羧基或其鹽。R61、R62較佳為烷基、炔基。通式(1)所示金屬錯合物色素藉此結構,利用噻吩的高供電子性而吸收長波長區的光。又,結合於聯吡啶環的乙烯基噻吩及結合於噻吩的取代基可排除水接近,而可抑制色素自半導體微粒脫附。又,藉由羧基或其鹽而可高效率地進行電子注入,藉由供電子性高的異硫氰基而可吸收長波長區的光。 The metal complex dye represented by the above formula (1) is preferably represented by the formula (8), R 61 and R 62 are independently an alkyl group, an alkoxy group or an alkynyl group, and A 1 and A 2 are independently a carboxyl group or salt. R 61 and R 62 are preferably an alkyl group or an alkynyl group. The metal complex dye represented by the formula (1) has a structure in which light of a long wavelength region is absorbed by the high electron donating property of the thiophene. Further, the vinyl thiophene bonded to the bipyridyl ring and the substituent bonded to the thiophene can exclude the water from approaching, and can inhibit the desorption of the pigment from the semiconductor fine particles. Further, electron injection can be efficiently performed by a carboxyl group or a salt thereof, and light having a long wavelength region can be absorbed by an isothiocyanate group having high electron donating property.
上述通式(1)所示金屬錯合物色素具有LL1與LL2各1個,以LL1的酸性基部分使色素吸附於半導體微粒表面,並使具烷基、烷氧基或炔基等疏水基的LL2配置於空間上半導體微粒層的反側,而可有效抑制水接近及色素脫附。 The metal complex dye represented by the above formula (1) has one each of LL 1 and LL 2 , and the dye is adsorbed on the surface of the semiconductor fine particles by the acidic group portion of LL 1 and has an alkyl group, an alkoxy group or an alkynyl group. The LL 2 of the hydrophobic group is disposed on the opposite side of the spatially semiconducting fine particle layer, and is effective for suppressing water contact and pigment desorption.
配位基Z1為選自異硫氰基、異氰酸基及異硒氰基的至少1種。該些基團的供電子性高,有助於色素的長波化。配位基Z1較佳為異硫氰基、異硒氰基。 The ligand Z 1 is at least one selected from the group consisting of isothiocyano group, isocyanate group, and isoselenocyano group. These groups have high electron donating properties and contribute to the long-wavelength of the pigment. The ligand Z 1 is preferably an isothiocyano group or an isoselenocyano group.
通式(1)中的CI1表示需要對離子來中和電荷時的對離子。通常,色素是陽離子還是陰離子或是否具有正的離子 電荷,取決於色素中的金屬、配位基及取代基。對離子CI1的數目m3為0以上的整數。 CI 1 in the formula (1) represents a counter ion when it is necessary to neutralize the charge with ions. Generally, whether the pigment is a cation or an anion or whether it has a positive ionic charge depends on the metal, ligand, and substituent in the pigment. The number m3 of the ions CI 1 is an integer of 0 or more.
亦可使取代基具有解離性基等,而使通式(1)的色素可解離而具有負電荷。此時,通式(1)的色素整體的電荷因對離子CI1而成為電中性。 The substituent may have a dissociable group or the like, and the dye of the formula (1) may be dissociated to have a negative charge. At this time, the charge of the entire dye of the general formula (1) becomes electrically neutral due to the ion CI 1 .
對離子CI1為正離子時,其例如為無機或有機的銨離子(如四烷基銨離子、吡啶鎓離子等)、鹼金屬離子或質子。 When the ion CI 1 is a positive ion, it is, for example, an inorganic or organic ammonium ion (such as a tetraalkylammonium ion, a pyridinium ion or the like), an alkali metal ion or a proton.
對離子CI1為負離子時,其例如可為無機或有機陰離子,可例舉:鹵素陰離子(例如氟離子、氯離子、溴離子、碘離子等)、取代芳基磺酸離子(例如對甲苯磺酸離子、對氯苯磺酸離子等)、芳基二磺酸離子(例如1,3-苯二磺酸離子、1,5-萘二磺酸離子、2,6-萘二磺酸離子等)、烷基硫酸離子(例如甲基硫酸離子等)、硫酸離子、硫氰酸離子、過氯酸離子、四氟硼酸離子、六氟磷酸鹽離子、苦味酸離子、乙酸離子、三氟甲磺酸離子等。而且,電荷均衡對離子可使用離子性聚合物或具有與色素相反電荷的其他色素,亦可使用金屬錯離子(例如聯苯-1,2-二硫醇鎳(III)等)。 When the ion CI 1 is a negative ion, it may be, for example, an inorganic or organic anion, and may be exemplified by a halogen anion (for example, a fluoride ion, a chloride ion, a bromide ion, an iodide ion, or the like) or a substituted arylsulfonic acid ion (for example, p-toluenesulfonate). Acid ion, p-chlorobenzenesulfonate ion, etc., aryl disulfonic acid ion (for example, 1,3-benzenedisulfonic acid ion, 1,5-naphthalenedisulfonic acid ion, 2,6-naphthalene disulfonic acid ion, etc.) ), alkyl sulfate ion (such as methyl sulfate ion, etc.), sulfate ion, thiocyanate ion, perchlorate ion, tetrafluoroboric acid ion, hexafluorophosphate ion, picric acid ion, acetic acid ion, trifluoromethane Acid ions, etc. Further, the charge equalization may use an ionic polymer or other dye having an opposite charge to the dye, and a metal counter ion (for example, biphenyl-1,2-dithiol nickel (III) or the like) may be used.
本發明的金屬錯合物色素組成物除上述通式(1)所示金屬錯合物色素外,亦包含特定量的下述通式(5)所示金屬錯合物色素與下述通式(6)所示者的至少一種,其調配比例按HPLC的254nm檢測的面積%計,通式(5)所示者及通式(6)所示者的含有率合計為該組成物的0.5~5%。 The metal complex dye composition of the present invention contains, in addition to the metal complex dye represented by the above formula (1), a specific amount of the metal complex dye represented by the following formula (5) and the following formula. (6) At least one of the above-mentioned compounds, the blending ratio is 0.5% of the area detected by 254 nm of HPLC, and the total content of the one shown by the formula (5) and the formula (6) is 0.5 of the composition. ~5%.
通式(5)的金屬錯合物色素有1個氰基作為配位基,通 式(6)的有2個氰基作為配位基。通式(5)中,M1、LL1、LL2、Z1、CI1、m1、m2及m3的含義與上述通式(1)的相同,通式(6)中M1、LL1、LL2、Z1、CI1、m1、m2及m3含義與上述通式(1)的相同,因重複而省略。依轉換效率等性能的觀點,較佳是通式(5)及(6)中的M1、LL1、LL2、Z1、CI1、m1、m2及m3的含義與通式(1)中的相同。 The metal complex dye of the formula (5) has one cyano group as a ligand, and the formula (6) has two cyano groups as a ligand. In the formula (5), M 1 , LL 1 , LL 2 , Z 1 , CI 1 , m1, m2 and m3 have the same meanings as in the above formula (1), and M 1 and LL 1 in the formula (6) The meanings of LL 2 , Z 1 , CI 1 , m1, m2 and m3 are the same as those of the above formula (1), and are omitted for repetition. From the viewpoints of performance such as conversion efficiency, it is preferred that M 1 , LL 1 , LL 2 , Z 1 , CI 1 , m1, m2 and m3 in the general formulae (5) and (6) have the meanings and formula (1) The same in the middle.
M1(LL1)m1(LL2)m2(Z1)(CN)‧(CI1)m3 通式(5) M 1 (LL 1 ) m1 (LL 2 ) m2 (Z 1 )(CN)‧(CI 1 ) m3 Formula (5)
M1(LL1)m1(LL2)m2(CN)2‧(CI1)m3 通式(6) M 1 (LL 1 ) m1 (LL 2 ) m2 (CN) 2 ‧(CI 1 ) m3 Formula (6)
氰基與前述異硫氰基等相較下供電子性低。因此,有1個氰基的通式(5)所示金屬錯合物色素及有2個氰基的通式(6)所示者其HOMO位準降低,吸收短波長化,所以在吸附於半導體微粒而用作增感色素時,無法有效利用長波側的光,從而導致轉換效率降低。 The cyano group has a lower electron donating property than the aforementioned isothiocyanato group. Therefore, the metal complex dye represented by the formula (5) having one cyano group and the formula (6) having two cyano groups have a lower HOMO level and a shorter wavelength, so that they are adsorbed on When the semiconductor fine particles are used as a sensitizing dye, light on the long-wave side cannot be effectively utilized, resulting in a decrease in conversion efficiency.
然而,當按HPLC的254nm檢測的面積計通式(5)所示金屬錯合物色素及通式(6)所示者的含有率為金屬錯合物色素組成物的0.5~5%時,則不會使轉換效率降低,而可飛躍地提高色素在溶液中的溶解性,並可提高在半導體微粒上的色素吸附量,而得高光電轉換效率。又使色素溶液能在短時間內製備,提高光電轉換元件製作的生產性。色素在溶液中溶解性提高的理由仍不確定,但認為,雖然基本骨架與通式(1)所示金屬錯合物色素共通,但因含有 0.5~5%的化學性質不同的具氰基的金屬錯合物色素,故金屬錯合物色素的結晶排列與0.5%以下的高純度時不同。 However, when the metal complex dye represented by the formula (5) and the content of the formula (6) are 0.5 to 5% of the metal complex dye composition, the area detected by 254 nm of HPLC is Therefore, the conversion efficiency is not lowered, and the solubility of the dye in the solution can be dramatically improved, and the amount of dye adsorption on the semiconductor fine particles can be improved, and the photoelectric conversion efficiency can be improved. Further, the dye solution can be prepared in a short period of time, and the productivity of the photoelectric conversion element production can be improved. The reason why the solubility of the dye in the solution is improved is still uncertain, but it is considered that although the basic skeleton is common to the metal complex dye represented by the general formula (1), it is contained. 0.5 to 5% of a metal complex dye having a cyano group having different chemical properties, so the crystal arrangement of the metal complex dye is different from that of 0.5% or less.
通式(5)所示金屬錯合物色素及通式(6)所示者的含有率按HPLC的254nm檢測的面積計為0.5~5%,是在以下條件下分析時而得的值:管柱為YMC公司製的YMC-Pack ODS-AM312 150mm×6.0mm I.D.、流量為0.75ml/分鐘、烘箱為40℃、溶離液組成為四氫呋喃/水=63/37(含有0.1%三氟乙酸緩衝液)、測定時間為50分鐘。 The content of the metal complex dye represented by the formula (5) and the content represented by the formula (6) is 0.5 to 5% based on the area detected by 254 nm of HPLC, and is a value obtained by analysis under the following conditions: The column is YMC-Pack ODS-AM312 manufactured by YMC Corporation, 150 mm × 6.0 mm ID, flow rate is 0.75 ml/min, oven is 40 ° C, and the composition of the eluent is tetrahydrofuran/water = 63/37 (containing 0.1% trifluoroacetic acid buffer). Liquid), the measurement time is 50 minutes.
當通式(5)所示金屬錯合物色素由下述通式(9)表示且通式(6)所示金屬錯合物色素由下述通式(10)表示時,通式(9)所示金屬錯合物色素與通式(10)所示者的含有率的合計按HPLC的254nm檢測的面積計,較佳為0.5~5%。通式(9)中R71、R72獨立表烷基、烷氧基或炔基,A5、A6獨立表示羧基或其鹽。通式(10)中R73、R74獨立表示烷基、烷氧基或炔基,A7、A8獨立表示羧基或其鹽。R71、R72較佳為烷基、炔基。R73、R74較佳為烷基、炔基。使通式(5)所示金屬錯合物色素與通式(6)所示者為此種結構,且該些金屬錯合物色素的含有率的合計按HPLC的254nm檢測的面積計為0.5~5%,則色素的吸收因噻吩環的供電子性而長波化,且因具氰基而不會導致短波化引起的明顯的轉換效率降低,可得溶解性提高之效。按HPLC的254nm檢測的面積計,通式(5)所示金屬錯合物色素與通式(6)所示者的含有率的合計較佳為0.5~4.5%,0.5~4%更佳,0.5~3.5%特佳。 When the metal complex dye represented by the formula (5) is represented by the following formula (9) and the metal complex dye represented by the formula (6) is represented by the following formula (10), the formula (9) The total content of the metal complex dye shown in the formula (10) is preferably 0.5 to 5% based on the area of the 254 nm detected by HPLC. In the formula (9), R 71 and R 72 are independently an alkyl group, an alkoxy group or an alkynyl group, and A 5 and A 6 each independently represent a carboxyl group or a salt thereof. In the formula (10), R 73 and R 74 each independently represent an alkyl group, an alkoxy group or an alkynyl group, and A 7 and A 8 independently represent a carboxyl group or a salt thereof. R 71 and R 72 are preferably an alkyl group or an alkynyl group. R 73 and R 74 are preferably an alkyl group or an alkynyl group. The metal complex dye represented by the formula (5) is represented by the formula (6), and the total content of the metal complex dyes is 0.5 in terms of the area detected by HPLC at 254 nm. When the concentration is ~5%, the absorption of the dye is long-wavered due to the electron-donating property of the thiophene ring, and the conversion efficiency is lowered by the cyano group without causing short-wavelength, and the solubility is improved. The total content of the metal complex dye represented by the formula (5) and the content represented by the formula (6) is preferably 0.5 to 4.5%, more preferably 0.5 to 4%, based on the area of the 254 nm detected by HPLC. 0.5~3.5% is especially good.
較佳是通式(5)所示金屬錯合物色素由下述通式(11)表示,且通式(6)所示金屬錯合物色素由下述通式(12)表示。通式(11)及(12)中R81~R84獨立表示炔基,A13~A16獨立表示羧基或其鹽。此結構的金屬錯合物色素因R81~R84為炔基,故可發揮因共軛系統伸長引起的由LL2的π-π*躍遷產生的吸收長波化及ε提高的效果。另外估計,因R81~R84為炔基,故此結構的金屬錯合物色素相對於噻吩環R81~R84的平面性提高,或因π電子增加,而有可能在色素吸附於半導體微粒表面的狀態下在分子間易發生有助於長波化的較佳締合。R81~R84較佳為碳數3~13的直鏈或分支炔基,其中更佳者為碳數3~8者,特佳者為碳數4~7者。 The metal complex dye represented by the formula (5) is preferably represented by the following formula (11), and the metal complex dye represented by the formula (6) is represented by the following formula (12). In the general formulae (11) and (12), R 81 to R 84 independently represent an alkynyl group, and A 13 to A 16 independently represent a carboxyl group or a salt thereof. Since the metal complex dye of this structure is an alkynyl group from R 81 to R 84 , it exhibits an effect of long-wavelength absorption and ε increase by the π-π * transition of LL 2 due to elongation of the conjugated system. It is also estimated that since R 81 to R 84 are alkynyl groups, the planarity of the metal complex dye of this structure with respect to the thiophene ring R 81 to R 84 is increased, or the π electrons are increased, and it is possible that the pigment is adsorbed to the semiconductor particles. In the state of the surface, a preferable association which contributes to long-wavelength is likely to occur between molecules. R 81 to R 84 are preferably a linear or branched alkynyl group having a carbon number of 3 to 13, and more preferably a carbon number of 3 to 8, and a particularly preferred one having a carbon number of 4 to 7.
金屬錯合物色素組成物較佳是可使通式(1)的金屬錯 合物色素和通式(5)所示金屬錯合物色素及/或通式(6)所示者溶於有機溶劑中。此種有機溶劑可例舉:醇溶劑(甲醇、乙醇、異丙醇等)、腈溶劑(乙腈、丙請、甲氧基丙腈、戊腈等)、酯溶劑(乙酸乙酯、γ-丁內酯等)、醯胺系溶劑(二甲基甲醯胺、二甲基乙醯胺、N-甲基吡咯烷酮)、鹵素系溶劑(二氯甲烷、二氯乙烷、氯苯、氯仿等)、苯、甲苯、二甲苯等,無特別限制。又可為含多種溶劑的混合溶劑。 The metal complex dye composition preferably dissolves the metal complex dye of the formula (1) and the metal complex dye represented by the formula (5) and/or the compound represented by the formula (6) in an organic form. In the solvent. Such an organic solvent may, for example, be an alcohol solvent (methanol, ethanol, isopropanol, etc.), a nitrile solvent (acetonitrile, propylene, methoxypropionitrile, valeronitrile, etc.), an ester solvent (ethyl acetate, γ -butyl). Lactone, etc., guanamine solvent (dimethylformamide, dimethylacetamide, N-methylpyrrolidone), halogen solvent (dichloromethane, dichloroethane, chlorobenzene, chloroform, etc.) There are no particular restrictions on benzene, toluene, xylene, and the like. Further, it may be a mixed solvent containing a plurality of solvents.
本發明通式(1)的金屬錯合物色素可藉含以下步驟的方法來製造,即藉外部加熱使包含下述通式(13)的金屬錯合物色素與下述通式(14)的化合物的混合液的溫度上升。 The metal complex dye of the formula (1) of the present invention can be produced by a method comprising the step of externally heating a metal complex dye comprising the following formula (13) and the following formula (14) The temperature of the mixture of compounds rises.
M1(LL1)m1(LL2)m2(Z2)m4‧(CI1)m5 通式(13) M 1 (LL 1 ) m1 (LL 2 ) m2 (Z 2 ) m4 ‧(CI 1 ) m5 Formula (13)
通式(13)中M1、LL1、LL2、CI1、m1及m2的含義與通式(1)的相同。Z2為1或2牙配位基。Z2較佳為鹵素原子(氟、氯、溴、碘)、水、二甲基甲醯胺基、-O-C(=O)-(CH2)p-C(=O)-O-(p表0以上的整數,較佳為0~6,0~4更佳,0~2特佳),更佳為氯原子、水、二甲基甲醯胺基,特佳為氯原子。m4表1~2的整數,Z2為1牙配位基時m4表示2,Z2為2牙配位基時m4表示1。m4為2時Z2彼此可相同或不同,較佳為相同。m5為0以上的整數。 M 1 , LL 1 , LL 2 , CI 1 , m1 and m2 in the formula (13) have the same meanings as in the formula (1). Z 2 is a 1 or 2 tooth ligand. Z 2 is preferably a halogen atom (fluorine, chlorine, bromine, iodine), water, dimethylformamido, -OC(=O)-(CH 2 ) p -C(=O)-O-(p The integer above Table 0 is preferably 0 to 6, more preferably 0 to 4, more preferably 0 to 2, more preferably chlorine atom, water or dimethylformamide, and particularly preferably a chlorine atom. M4 is an integer of 1 to 2, when Z 2 is a dental ligand, m4 represents 2, and when Z 2 is a 2-dentate ligand, m4 represents 1. When m4 is 2, Z 2 may be the same or different from each other, and is preferably the same. M5 is an integer of 0 or more.
通式(14)的化合物由以下化學式表示。 The compound of the formula (14) is represented by the following chemical formula.
M11QCN 通式(14)[通式(14)中,M11表示無機或有機的銨離子、質子或鹼金屬離子,Q表示硫原子、氧原子或硒原子。] M 11 QCN Formula (14) [In the formula (14), M 11 represents an inorganic or organic ammonium ion, a proton or an alkali metal ion, and Q represents a sulfur atom, an oxygen atom or a selenium atom. ]
M11較佳為無機或有機的銨離子(例如NH4 +、NBu4 +、NEt3H+)、鹼金屬離子(例如Na+、K+、Li+),更佳為NH4 +、NBu4 +、K+,特佳為NH4 +、K+。就通式(1)的金屬錯合物色素的吸收波長,即作為配位基的QCN的供電子性的方面而言,Q較佳為硫原子、硒原子,更佳為硫原子。 M 11 is preferably an inorganic or organic ammonium ion (for example, NH 4 + , NBu 4 + , NEt 3 H + ), an alkali metal ion (for example, Na + , K + , Li + ), more preferably NH 4 + , NBu. 4 + , K + , especially good for NH 4 + , K + . The Q is preferably a sulfur atom or a selenium atom, and more preferably a sulfur atom, in terms of the absorption wavelength of the metal complex dye of the formula (1), that is, the electron donating property of the QCN as a ligand.
通式(1)所示金屬錯合物色素如前所述,由下式表示。 The metal complex dye represented by the formula (1) is represented by the following formula as described above.
M1(LL1)m1(LL2)m2(Z1)2‧(CI1)m3 通式(1) M 1 (LL 1 ) m1 (LL 2 ) m2 (Z 1 ) 2 ‧(CI 1 ) m3 Formula (1)
通式(1)中,M1表示金屬原子,LL1為下述通式(2)所示的2牙配位基,LL2為下述通式(3)所示的2牙配位基;m1與m2均表示1;Z1表示配位基,為選自異硫氰基、異氰酸基及異硒氰基的至少1種,Z1彼此可相同亦可不同,較佳為相同;CI1表示需要對離子來中和電荷時的對離子;m3為0以上的整數。 In the formula (1), M 1 represents a metal atom, LL 1 is a bidentate ligand represented by the following formula (2), and LL 2 is a bidentate ligand represented by the following formula (3). And m1 and m2 each represent 1; Z 1 represents a ligand which is at least one selected from the group consisting of isothiocyanato, isocyanate and isocyanium. Z 1 may be the same or different, preferably the same. ; CI 1 denotes a counter ion when it is necessary to neutralize the charge with ions; m3 is an integer of 0 or more.
上述通式(1)~(4)的說明與前述者相同,因重複而省略。 The descriptions of the above general formulae (1) to (4) are the same as those described above, and are omitted because they are repeated.
本發明的金屬錯合物色素可如以下合成流程所例示,以含以下步驟的方法製造,即藉外部加熱將含上述通式(13)的金屬錯合物色素與上述通式(14)的化合物的混合液加熱,使其溫度上升。含上述通式(13)的金屬錯合物色素與上述通式(14)的化合物的混合液較佳使用有機溶劑,可例舉:醇溶劑(甲醇、乙醇、丙醇、異丙醇、丁醇等)、腈溶劑(乙腈、丙腈、甲氧基丙腈、戊腈等)、酯溶劑(乙酸乙 酯、γ-丁內酯等)、醯胺系溶劑(二甲基甲醯胺、二甲基乙醯胺、N-甲基吡咯烷酮)、鹵素系溶劑(二氯甲烷、二氯乙烷、氯苯、氯仿等)、苯、甲苯、二甲苯等,但不特別限於該些有機溶劑。又,可為含多種溶劑的混合溶劑,亦可為與水的混合溶劑。有機溶劑較佳為醇溶劑、腈溶劑、醯胺系溶劑,醇溶劑、醯胺系溶劑更佳,醯胺系溶劑尤佳。 The metal complex dye of the present invention can be produced by a method comprising the following steps, that is, a metal complex dye containing the above formula (13) and the above formula (14) by external heating The mixture of compounds is heated to raise the temperature. The liquid mixture containing the metal complex dye of the above formula (13) and the compound of the above formula (14) is preferably an organic solvent, and may be exemplified by an alcohol solvent (methanol, ethanol, propanol, isopropanol, butyl). Alcohol, etc.), nitrile solvent (acetonitrile, propionitrile, methoxypropionitrile, valeronitrile, etc.), ester solvent (ethyl acetate, γ -butyrolactone, etc.), guanamine solvent (dimethylformamide, Dimethylacetamide, N-methylpyrrolidone), halogen solvent (dichloromethane, dichloroethane, chlorobenzene, chloroform, etc.), benzene, toluene, xylene, etc., but not particularly limited to the organic solvents . Further, it may be a mixed solvent containing a plurality of solvents or a mixed solvent with water. The organic solvent is preferably an alcohol solvent, a nitrile solvent or a guanamine solvent, more preferably an alcohol solvent or a guanamine solvent, and a guanamine solvent is preferred.
將含通式(13)的金屬錯合物色素與通式(14)的化合物的混合液加熱使其溫度上升的方法,必須是自外部加熱的方法。自外部加熱的方法是指,藉來自外部的熱源的熱傳遞而加熱的方法。熱源無特別限制,可例舉:將電能轉變為熱的熱源、燃燒而得的熱源等。可將自該些熱源獲得的熱經由介質而加熱上述混合液。介質可例舉:油、水(水蒸氣)等。照射微波等的方法是藉物質吸收微波,而將微波能量轉變成熱的加熱,可說是來自內部的加熱,不包含在外部加熱中。照射微波等的內部加熱其加熱原理與外部加熱不同,是直接將金屬錯合物加熱,因加熱能量過大而會發生混合物中所含的通式(13)的金屬錯合物色素或通式(14)的化合物或通式(1)的金屬錯合物色素的分解等,因此對製造本發明的金屬錯合物色素而言欠佳。藉外部加熱的方法較佳可例舉:藉油浴或水蒸氣將混合液加熱的方法。加熱的溫度與反應時間可依據所反應的金屬錯合物色素或所用的溶劑來適當選定。加熱溫度較佳為90~170℃,90~160℃更佳,100~150℃特佳,100~140℃最佳。反應時間較佳為30分鐘~12小時,1~8小時更佳,2~6小時尤佳。 The method of heating the mixture of the metal complex dye of the formula (13) and the compound of the formula (14) to increase the temperature must be a method of heating from the outside. The method of heating from the outside refers to a method of heating by heat transfer from an external heat source. The heat source is not particularly limited, and examples thereof include a heat source that converts electric energy into heat, a heat source that is burned, and the like. The heat obtained from the heat sources can be heated via the medium to heat the mixture. The medium can be exemplified by oil, water (water vapor), and the like. The method of irradiating microwaves or the like is to heat the microwave energy into heat by the absorption of the microwave by the substance, and it can be said that the heating is from the inside and is not included in the external heating. The internal heating of the microwave or the like is different from the external heating, and the metal complex is directly heated, and the metal complex dye or the general formula of the general formula (13) contained in the mixture may occur due to excessive heating energy. The decomposition of the compound of 14) or the metal complex dye of the formula (1) is not preferable for the production of the metal complex dye of the present invention. The method of external heating is preferably a method of heating the mixture by means of an oil bath or steam. The heating temperature and reaction time can be appropriately selected depending on the metal complex dye to be reacted or the solvent to be used. The heating temperature is preferably 90 to 170 ° C, 90 to 160 ° C is better, 100 to 150 ° C is particularly good, and 100 to 140 ° C is the best. The reaction time is preferably from 30 minutes to 12 hours, more preferably from 1 to 8 hours, and particularly preferably from 2 to 6 hours.
通式(13)的金屬錯合物色素可如下述流程所示,對具Ru的化合物導入LL1與LL2而得。Ru源無特別限制,可例舉:氯化釕或其水合物、後述的d-1-6等,較佳為Ru價數為2價的後述d-1-6。LL1與LL2的導入順序無特別限制,較佳為自LL2起導入。Z2常取決於Ru源,可藉添加劑(碘化鉀、溴化鉀、KO-C(=O)-(CH2)p-C(=O)-OK(p為0以上的整數)等)之使用而改變。又,可使溶劑配位形成Z2。續在所得含通式(13)之金屬錯合物色素的溶液中加化合物(14),如上述自外部加熱,而得通式(1)的金屬錯合物色素。 The metal complex dye of the formula (13) can be obtained by introducing LL 1 and LL 2 to a compound having Ru as shown in the following scheme. The Ru source is not particularly limited, and examples thereof include ruthenium chloride or a hydrate thereof, d-1-6 described later, and the like, and d-1-6 which is a valence of Ru which is valence of 2 is preferable. The order of introduction of LL 1 and LL 2 is not particularly limited, but is preferably introduced from LL 2 . Z 2 is often dependent on the Ru source, and may be an additive (potassium iodide, potassium bromide, KO-C(=O)-(CH 2 ) p -C(=O)-OK (p is an integer of 0 or more), etc.) Change with use. Further, the solvent can be coordinated to form Z 2 . Further, the compound (14) is added to the obtained solution containing the metal complex dye of the formula (13), and the mixture is heated from the outside to obtain a metal complex dye of the formula (1).
上述通式(13)中配位基LL2較佳由下述通式(7)表示。通式(7)中R41~R43及R51~R53獨立表氫原子、烷基、烷氧基或炔基。R41~R43中至少1個為烷基、烷氧基或炔基。R51~R53中至少1個為烷基、烷氧基或炔基。X1、X2為硫原子、氧原子、硒原子或NR7,R7為氫原子、烷基、芳基或雜環基。R41~R43較佳為烷基、炔基。R51~R53較佳為烷基、炔基。 通式(7)中X1、X2較佳為硫原子、硒原子,硫原子更佳。 The ligand LL 2 in the above formula (13) is preferably represented by the following formula (7). In the formula (7), R 41 to R 43 and R 51 to R 53 each independently represent a hydrogen atom, an alkyl group, an alkoxy group or an alkynyl group. At least one of R 41 to R 43 is an alkyl group, an alkoxy group or an alkynyl group. At least one of R 51 to R 53 is an alkyl group, an alkoxy group or an alkynyl group. X 1 and X 2 are a sulfur atom, an oxygen atom, a selenium atom or NR 7 , and R 7 is a hydrogen atom, an alkyl group, an aryl group or a heterocyclic group. R 41 to R 43 are preferably an alkyl group or an alkynyl group. R 51 to R 53 are preferably an alkyl group or an alkynyl group. In the general formula (7), X 1 and X 2 are preferably a sulfur atom or a selenium atom, and a sulfur atom is more preferable.
較佳的是,通式(13)的金屬錯合物色素由下述通式(15)表示且通式(14)的化合物由下述通式(16)表示,而製造下述通式(8)所示金屬錯合物色素的方法。通式(8)、(15)中R61、R62、R91、R92獨立表示氫原子、烷基、烷氧基或炔基,A1~A4獨立表示羧基或其鹽。通式(16)中,M12表示無機或有機的銨離子、質子或鹼金屬離子。R61、R62、R91、R92較佳為烷基、炔基。金屬錯合物色素(13)與通式(14)的化合物為該些結構時,因金屬錯合物色素(13)具有對親核物種的化合物(14)穩定的噻吩環,故可抑制不想要的親核反應,使脫離能高且親核能低的氯成為脫離基,藉此可高效率製造-NCS基選擇性配位於釕原子的通式(8)的金屬錯合物色素。 It is preferred that the metal complex dye of the formula (13) is represented by the following formula (15) and the compound of the formula (14) is represented by the following formula (16) to produce the following formula ( 8) A method of the metal complex pigment shown. In the general formulae (8) and (15), R 61 , R 62 , R 91 and R 92 each independently represent a hydrogen atom, an alkyl group, an alkoxy group or an alkynyl group, and A 1 to A 4 independently represent a carboxyl group or a salt thereof. In the formula (16), M 12 represents an inorganic or organic ammonium ion, a proton or an alkali metal ion. R 61 , R 62 , R 91 and R 92 are preferably an alkyl group or an alkynyl group. When the metal complex dye (13) and the compound of the formula (14) are in such a structure, since the metal complex dye (13) has a thiophene ring which is stable to the compound (14) of the nucleophilic species, it is possible to suppress the undesired The desired nucleophilic reaction is such that the chlorine having a high desorption energy and a low nucleophilic energy becomes a decomposing group, whereby the metal complex dye of the formula (8) in which the NCS group is selectively coordinated to the deuterium atom can be efficiently produced.
較佳的是,通式(13)的金屬錯合物色素由下述通式(18)表示且通式(14)的化合物由下述通式(19)表示,而製造下述通式(17)所示金屬錯合物色素的方法。通式(17)及(18)中,R101、R102、R111及R112獨立表示炔基,A9~A12獨立表示羧基或其鹽。通式(19)中,M13表示無機或有機的銨離子、質子或鹼金屬離子。R101、R102、R111及R112較佳為碳數3~13的直鏈或分支炔基,其中碳數3~8者更佳,碳數4~7尤佳。 It is preferred that the metal complex dye of the formula (13) is represented by the following formula (18) and the compound of the formula (14) is represented by the following formula (19) to produce the following formula ( 17) A method of the metal complex pigment shown. In the general formulae (17) and (18), R 101 , R 102 , R 111 and R 112 each independently represent an alkynyl group, and A 9 to A 12 independently represent a carboxyl group or a salt thereof. In the formula (19), M 13 represents an inorganic or organic ammonium ion, a proton or an alkali metal ion. R 101 , R 102 , R 111 and R 112 are preferably a linear or branched alkynyl group having a carbon number of 3 to 13, and a carbon number of 3 to 8 is more preferable, and a carbon number of 4 to 7 is particularly preferable.
通式(1)所示的色素在溶液中的極大吸收波長為500~700nm的範圍,更佳為500~650nm的範圍。 The maximum absorption wavelength of the dye represented by the formula (1) in the solution is in the range of 500 to 700 nm, more preferably in the range of 500 to 650 nm.
以下為本發明所用的具通式(1)所示結構的色素的具體例,但本發明不限於此。另外,下述具體例中的色素包含具有質子解離性基的配位基時,此配位基可視需要解離而與對離子形成鹽。另外,還存在基於雙鍵部位的異構物,或基於錯合物的配位基的位置的異構物等,但該些異構物可為任意種類,亦可為混合物。 The following is a specific example of the dye having the structure represented by the formula (1) used in the present invention, but the present invention is not limited thereto. Further, when the dye in the following specific examples contains a ligand having a proton-dissociable group, the ligand may be dissociated as needed to form a salt with the counter ion. Further, an isomer based on a double bond site or an isomer based on the position of a complex of a complex compound may be present, but the isomer may be of any type or a mixture.
本發明的光電轉換元件10所用的電解質組成物中,氧化還原對可例舉:碘與碘化物(如碘化鋰、碘化四丁基銨、 碘化四丙基銨等)的組合、烷基紫精(alkyl viologen)(如氯化甲基紫精、溴化己基紫精、四氟硼酸苄基紫精)與其還原物的組合、聚羥基苯類(如對苯二酚、萘二酚等)與其氧化物的組合、2價鐵錯合物與3價鐵錯合物(例如紅血鹽與黃血鹽)的組合等,其中較佳為碘與碘化物的組合。 In the electrolyte composition used in the photoelectric conversion element 10 of the present invention, the redox pair may, for example, be iodine and an iodide (e.g., lithium iodide or tetrabutylammonium iodide, Combination of tetrapropylammonium iodide, etc., alkyl viologen (such as methyl violet, hexyl bromide, benzyl violet tetrafluoroborate) and its reducing compound, polyhydroxyl a combination of a benzene (such as hydroquinone, naphthalenediol, etc.) and an oxide thereof, a combination of a divalent iron complex and a trivalent iron complex (for example, a red blood salt and a yellow blood salt), among which It is a combination of iodine and iodide.
碘鹽的陽離子較佳為5員或6員環的含氮芳香族陽離子。尤其當通式(1)所示化合物不是碘鹽時,較佳是併用以下碘鹽:日本專利再公表WO95/18456號公報、日本專利特開平8-259543號公報、電化學第65卷11號923頁(1997年)等所記載的吡啶鎓鹽、咪唑鎓鹽、三唑鎓鹽等。 The cation of the iodide salt is preferably a nitrogen-containing aromatic cation of a 5- or 6-membered ring. In particular, when the compound represented by the formula (1) is not an iodide salt, the following iodide salt is preferably used in combination: Japanese Patent Laid-Open Publication No. WO95/18456, Japanese Patent Laid-Open No. Hei 8-259543, No. 65, No. Pyridinium salt, imidazolium salt, triazolium salt, etc. described in 923 (1997).
本發明的光電轉換元件10所用的電解質組成物中,較佳是與雜環四級氯化合物一起含有碘。碘的含量相對於電解質組成物總體較佳為0.1~20wt%,更佳為0.5~5wt%。 The electrolyte composition used in the photoelectric conversion element 10 of the present invention preferably contains iodine together with the heterocyclic quaternary chlorine compound. The content of iodine is preferably 0.1 to 20% by weight, more preferably 0.5 to 5% by weight based on the total amount of the electrolyte composition.
本發明的光電轉換元件10所用的電解質組成物可包含溶劑。電解質組成物中的溶劑含量較佳為組成物總體的50wt%以下,更佳為30wt%以下,特佳為10wt%以下。 The electrolyte composition used in the photoelectric conversion element 10 of the present invention may contain a solvent. The solvent content in the electrolyte composition is preferably 50% by weight or less, more preferably 30% by weight or less, particularly preferably 10% by weight or less based on the total amount of the composition.
為在低黏度下得高離子遷移率或在高介電常數下提高有效載子濃度,或為上述兩者,溶劑較佳為離子傳導性佳者,可例舉:碳酸酯化合物(碳酸乙二酯、碳酸丙二酯等)、雜環化合物(3-甲基-2-噁唑烷酮等)、醚化合物(二噁烷、二乙醚等)、鏈狀醚類(乙二醇二烷醚、丙二醇二烷醚、聚乙二醇二烷醚、聚丙二醇二烷醚等)、醇類(甲醇、乙醇、乙二醇單烷醚、丙二醇單烷醚、聚乙二醇單烷醚、聚丙二醇單烷醚等)、多元醇類(乙二醇、丙二醇、聚乙二醇、聚 丙二醇、甘油等)、腈化合物(乙腈、戊二請、甲氧基乙腈、丙腈、苯甲腈、雙氰基乙醚等)、酯類(羧酸酯、磷酸酯、膦酸酯等)、非質子性極性溶劑(二甲亞碸、環丁碸等)、水、日本專利特開2002-110262記載的含水電解液、日本專利特開2000-36332號公報、日本專利特開2000-243134號公報及日本專利再公表WO/00-54361號公報記載的電解質溶劑等。該些溶劑可混合二種以上來使用。 In order to obtain high ion mobility at a low viscosity or to increase an effective carrier concentration at a high dielectric constant, or both, the solvent is preferably an ion conductivity, and a carbonate compound (ethylene carbonate) is exemplified. Ester, propylene carbonate, etc.), heterocyclic compound (3-methyl-2-oxazolidinone, etc.), ether compound (dioxane, diethyl ether, etc.), chain ether (ethylene glycol dialkyl ether) , propylene glycol dialkyl ether, polyethylene glycol dialkyl ether, polypropylene glycol dialkyl ether, etc.), alcohols (methanol, ethanol, ethylene glycol monoalkyl ether, propylene glycol monoalkyl ether, polyethylene glycol monoalkyl ether, poly Propylene glycol monoalkyl ether, etc.), polyols (ethylene glycol, propylene glycol, polyethylene glycol, poly Propylene glycol, glycerin, etc., nitrile compounds (acetonitrile, pentane, methoxyacetonitrile, propionitrile, benzonitrile, dicyandiethyl ether, etc.), esters (carboxylates, phosphates, phosphonates, etc.), An aprotic polar solvent (dimethyl hydrazine, cyclobutyl hydrazine, etc.), water, an aqueous electrolyte solution described in JP-A-2002-110262, Japanese Patent Laid-Open Publication No. 2000-36332, and Japanese Patent Laid-Open No. 2000-243134 An electrolyte solvent or the like described in Japanese Laid-Open Patent Publication No. WO-00-54361. These solvents may be used in combination of two or more.
又,電解質溶劑可使用在室溫下為液態、熔點低於室溫的無電化學活性的鹽,可例舉:1-乙基-3-甲基咪唑鎓三氟甲磺酸鹽、1-丁基-3-甲基咪唑鎓三氟甲磺酸鹽等咪唑鎓鹽、吡啶鎓鹽等含氮雜環四級氯化合物,或四烷基銨鹽等。 Further, as the electrolyte solvent, an electrochemically active salt which is liquid at room temperature and has a melting point lower than room temperature can be used, and examples thereof include 1-ethyl-3-methylimidazolium trifluoromethanesulfonate and 1-butyl. A nitrogen-containing heterocyclic quaternary chlorine compound such as an imidazolium salt or a pyridinium salt such as a 3-methylimidazolium trifluoromethanesulfonate or a tetraalkylammonium salt.
本發明的光電轉換元件所用的電解質組成物中可添加聚合物或油凝膠化劑,或可藉由多官能單體類的聚合或聚合物的交聯反應等方法進行凝膠化(固體化)。 A polymer or an oil gelling agent may be added to the electrolyte composition used in the photoelectric conversion element of the present invention, or may be gelled by a polymerization of a polyfunctional monomer or a crosslinking reaction of a polymer (solidification). ).
藉由添加聚合物而使電解質組成物凝膠化時,可添加Polymer Electrolyte Reviews-1 & 2(J.R.MacCallum及C.A.Vincent共同編寫、ELSEVIER APPLIED SCIENCE)記載的化合物等,此時較佳是使用聚丙烯腈或聚偏二氟乙烯。 When the electrolyte composition is gelated by adding a polymer, a compound described in Polymer Electrolyte Reviews-1 & 2 (JR MacCallum and CAVincent Co-authored, ELSEVIER APPLIED SCIENCE) can be added, and in this case, polypropylene is preferably used. Nitrile or polyvinylidene fluoride.
藉由添加油凝膠化劑使電解質組成物凝膠化時,油凝膠化劑可使用J.Chem.Soc.Japan,Ind.Chem.Soc.,46779(1943)、J.Am.Chem.Soc.,111,5542(1989)、J.Chem.Soc.,Chem.Commun.,390(1993)、Angew.Chem.Int.Ed.Engl.,35,1949(1996)、Chem.Lett.,885(1996)、J.Chem.Soc.,Chem.Commun.,545(1997)等所記載的化合物,較佳是使 用具有醯胺結構的化合物。 When the electrolyte composition is gelled by the addition of an oil gelling agent, the oil gelling agent can be used by J. Chem. Soc. Japan, Ind. Chem. Soc., 46779 (1943), J. Am. Chem. Soc., 111, 5542 (1989), J. Chem. Soc., Chem. Commun., 390 (1993), Angew. Chem. Int. Ed. Engl., 35, 1949 (1996), Chem. Lett., The compound described in 885 (1996), J. Chem. Soc., Chem. Commun., 545 (1997), etc., preferably A compound having a guanamine structure is used.
利用多官能單體類的聚合而將電解質組成物凝膠化時,較佳為以下方法:由多官能單體類、聚合起始劑、電解質及溶劑製備溶液,以澆鑄法、塗布法、浸泡法、含浸法等方法,在承載了色素的電極上形成溶膠狀電解質層,再藉多官能單體的自由基聚合使其凝膠化。多官能單體類較佳為具有2個以上乙烯性不飽和基的化合物,較佳為:二乙烯基苯、乙二醇二丙烯酸酯、乙二醇二甲基丙烯酸酯、二乙二醇二丙烯酸酯、二乙二醇二甲基丙烯酸酯、三乙二醇二丙烯酸酯、三乙二醇二甲基丙烯酸酯、季戊四醇三丙烯酸酯、三羥甲基丙烷三丙烯酸酯等。 When the electrolyte composition is gelated by polymerization of a polyfunctional monomer, it is preferably a method of preparing a solution from a polyfunctional monomer, a polymerization initiator, an electrolyte, and a solvent, by casting, coating, or immersion. A method such as a method or an impregnation method forms a sol-like electrolyte layer on an electrode carrying a pigment, and gels by radical polymerization of a polyfunctional monomer. The polyfunctional monomer is preferably a compound having two or more ethylenically unsaturated groups, preferably divinylbenzene, ethylene glycol diacrylate, ethylene glycol dimethacrylate, and diethylene glycol II. Acrylate, diethylene glycol dimethacrylate, triethylene glycol diacrylate, triethylene glycol dimethacrylate, pentaerythritol triacrylate, trimethylolpropane triacrylate, and the like.
凝膠電解質除了上述多官能單體類外,可利用含單官能單體的混合物的聚合而形成。單官能單體可使用:丙烯酸或α-烷基丙烯酸(丙烯酸、甲基丙烯酸、衣康酸等)或該些的酯或醯胺或乙烯酯類(乙酸乙烯酯等)、順丁烯二酸或反丁烯二酸或由該些衍生的酯類(順丁烯二酸二甲酯、順丁烯二酸二丁酯、反丁烯二酸二乙酯等)、對苯乙烯磺酸的鈉鹽、丙烯腈、甲基丙烯腈、二烯類(丁二烯、環戊二烯、異戊二烯等)、芳香族乙烯基化合物(苯乙烯、對氯苯乙烯、三級丁基苯乙烯、α-甲基苯乙烯、苯乙烯磺酸鈉等)、N-乙烯基甲醯胺、N-乙烯基-N-甲基甲醯胺、N-乙烯基乙醯胺、N-乙烯基-N-甲基乙醯胺、乙烯基磺酸、乙烯基磺酸鈉、烯丙基磺酸鈉、甲基丙烯基磺酸鈉、偏二氟乙烯、偏二氯乙烯、乙烯基烷醚類(甲基乙烯醚等)、乙烯、丙烯、 丁烯、異丁烯、N-苯基順丁烯二醯亞胺等。 The gel electrolyte can be formed by polymerization of a mixture containing a monofunctional monomer in addition to the above polyfunctional monomer. Monofunctional monomers can be used: acrylic acid or alpha -alkyl acrylic acid (acrylic acid, methacrylic acid, itaconic acid, etc.) or esters or guanamine or vinyl esters (vinyl acetate, etc.), maleic acid Or fumaric acid or esters derived therefrom (dimethyl maleate, dibutyl maleate, diethyl fumarate, etc.), p-styrenesulfonic acid Sodium salt, acrylonitrile, methacrylonitrile, diene (butadiene, cyclopentadiene, isoprene, etc.), aromatic vinyl compound (styrene, p-chlorostyrene, tert-butylbenzene) Ethylene, α -methylstyrene, sodium styrene sulfonate, etc.), N-vinylformamide, N-vinyl-N-methylformamide, N-vinylacetamide, N-vinyl -N-methylacetamide, vinyl sulfonic acid, sodium vinyl sulfonate, sodium allyl sulfonate, sodium methacrylate sulfonate, vinylidene fluoride, vinylidene chloride, vinyl alkyl ether (methyl vinyl ether or the like), ethylene, propylene, butylene, isobutylene, N-phenyl maleimide or the like.
相對於單體總體,多官能單體的調配量較佳設為0.5~70wt%,更佳為1.0~50wt%。上述單體可藉由大津隆行、木下雅悅共著「高分子合成的實驗法」(化學同人)或大津隆行「講座聚合反應論1-自由基聚合(I)」(化學同人)記載的一般的高分子合成法即自由基聚合而聚合。本發明所用的凝膠電解質用單體可藉加熱、光或電子束而行自由基聚合或電化學自由基聚合,特佳是藉加熱而自由基聚合。此時可較佳使用的聚合起始劑為:2,2'-偶氮雙異丁腈、2,2'-偶氮雙(2,4-二甲基戊腈)、2,2'-偶氮雙(2-甲基丙酸)二甲酯、2,2'-偶氮雙異丁酸二甲酯等偶氮系起始劑,過氧化月桂基、過氧化苯甲醯、過氧化辛酸三級丁酯等過氧化物系起始劑等。相對於單體總量,聚合起始劑的添加量較佳為0.01~20wt%,更佳為0.1~10wt%。 The compounding amount of the polyfunctional monomer is preferably from 0.5 to 70% by weight, more preferably from 1.0 to 50% by weight, based on the total amount of the monomers. The above-mentioned monomers can be described by the "Experimental Method of Polymer Synthesis" (Chemical Fellow) or Otsu Takayuki "Lecture Polymerization Theory 1-Free Radical Polymerization (I)" (Chemical Fellow). The polymer synthesis method is a radical polymerization to polymerize. The monomer for gel electrolyte used in the present invention may be subjected to radical polymerization or electrochemical radical polymerization by heating, light or electron beam, and particularly preferably by free radical polymerization by heating. The polymerization initiators which can be preferably used at this time are: 2,2'-azobisisobutyronitrile, 2,2'-azobis(2,4-dimethylvaleronitrile), 2,2'- Azo-based initiators such as azobis(2-methylpropionic acid) dimethyl ester and 2,2'-azobisisobutyric acid dimethyl ester, lauryl peroxide, benzammonium peroxide, peroxidation A peroxide-based initiator such as butyl octanoate. The amount of the polymerization initiator to be added is preferably from 0.01 to 20% by weight, more preferably from 0.1 to 10% by weight, based on the total amount of the monomers.
凝膠電解質中所佔單體的重量組成範圍較佳為0.5~70wt%,1.0~50wt%更佳。在藉聚合物交聯反應使電解質組成物凝膠化時,較佳是在組成物中添加具有可交聯的反應性基的聚合物及交聯劑。較佳的反應性基為吡啶環、咪唑環、噻唑環、噁唑環、三唑環、嗎福啉環、哌啶環、哌嗪環等含氮雜環,較佳的交聯劑為有2個以上的氮原子可親核攻擊的官能基的化合物(親電子劑),例如為2官能以上的鹵化烷、鹵化芳烷、磺酸酯、酸酐、醯氯、異氰酸酯等。 The weight composition of the monomer in the gel electrolyte is preferably in the range of 0.5 to 70% by weight, more preferably 1.0 to 50% by weight. When the electrolyte composition is gelated by a polymer crosslinking reaction, it is preferred to add a polymer having a crosslinkable reactive group and a crosslinking agent to the composition. Preferred reactive groups are pyridine ring, imidazole ring, thiazole ring, oxazole ring, triazole ring, morpholin ring, piperidine ring, piperazine ring and the like, and a preferred crosslinking agent is A compound (electrophilic agent) having two or more functional groups which can be nucleophilically attacked by a nitrogen atom is, for example, a halogen functional alkane having 2 or more functional groups, an alkyl halide, a sulfonate, an acid anhydride, an anthracene chloride or an isocyanate.
本發明的電解質組成物可添加金屬碘化物(LiI、NaI、KI、CsI、CaI2等)、金屬溴化物(LiBr、NaBr、KBr、CsBr、 CaBr2等)、四級銨溴鹽(溴化四烷基銨、溴化吡啶鎓等)、金屬錯合物(亞鐵氰酸鹽-鐵氰酸鹽、二茂鐵-二茂鐵離子等)、硫化合物(聚硫化鈉、烷基硫醇-烷基二硫化物等)、紫原色素、對苯二酚-醌等。該些化合物亦可混合而使用。 The electrolyte composition of the present invention may be added with metal iodide (LiI, NaI, KI, CsI, CaI 2, etc.), metal bromide (LiBr, NaBr, KBr, CsBr, CaBr 2 , etc.), and quaternary ammonium bromide (bromination). Tetraalkylammonium, pyridinium bromide, etc.), metal complex (ferrocyanide-iron cyanide, ferrocene-ferrocene ion, etc.), sulfur compound (polysulfide, alkylthiol) - an alkyl disulfide or the like), a violet pigment, hydroquinone-hydrazine or the like. These compounds can also be used in combination.
又,本發明可添加J.Am.Ceram.Soc.,80(12),3157-3171(1997)記載的三級丁基吡啶或2-甲基吡啶、2,6-二甲基吡啶等鹼性化合物,添加的較佳濃度範圍為0.05~2M。 Further, in the present invention, a base such as tributylpyridine or 2-methylpyridine or 2,6-dimethylpyridine described in J. Am. Ceram. Soc., 80 (12), 3157-3171 (1997) may be added. For the compound, the preferred concentration range is 0.05~2M.
另外,本發明的電解質可使用包含電洞導體物質的電荷傳輸層。電洞導體物質可使用9,9'-螺聯芴衍生物等。 Further, the electrolyte of the present invention may use a charge transport layer containing a hole conductor substance. As the hole conductor material, a 9,9'-spiropyrene derivative or the like can be used.
另外,可依序積層電極層、感光體層(光電轉換層)、電荷遷移體層(電洞傳輸層)、傳導層、對電極層。可使用發揮p型半導體功能的電洞傳輸材料製成電洞傳輸層。較佳的電洞傳輸層例如可使用無機或有機系電洞傳輸材料。無機系電洞傳輸材料可例舉CuI、CuO、NiO等。另有機系電洞傳輸材料可例舉高分子系與低分子系的電洞傳輸材料,高分子系電洞傳輸材料可例舉聚乙烯咔唑、聚胺、有機聚矽烷等。另外,低分子系電洞傳輸材料可例舉:三苯基胺衍生物、芪衍生物、腙衍生物、苯丙甲胺衍生物等。其中,有機聚矽烷與先前的碳系高分子不同,沿著主鏈的矽而非定域化的σ電子有助於光傳導,並具有高的電洞遷移率,因此較佳(Phys.Rev.B,35,2818(1987))。 Further, an electrode layer, a photoreceptor layer (photoelectric conversion layer), a charge transport layer (hole transport layer), a conductive layer, and a counter electrode layer may be laminated in this order. The hole transport layer can be made using a hole transport material that functions as a p-type semiconductor. A preferred hole transport layer can be, for example, an inorganic or organic hole transport material. The inorganic hole transporting material may, for example, be CuI, CuO, NiO or the like. Further, the organic hole transporting material may be a polymer-based and low-molecular-weight hole transporting material, and the polymer-based hole transporting material may, for example, be a polyvinyl carbazole, a polyamine or an organic polydecane. Further, the low molecular weight hole transporting material may, for example, be a triphenylamine derivative, an anthracene derivative, an anthracene derivative or a phenylpropylamine derivative. Among them, the organic polydecane is different from the previous carbon-based polymer, and the 矽-electron along the main chain, rather than the localized σ electron, contributes to light conduction and has high hole mobility, so it is preferable (Phys.Rev .B, 35, 2818 (1987)).
上述傳導層只要導電性佳即可,無特別限制,可例舉:無機導電性材料、有機導電性材料、導電性聚合物、分子間電荷遷移錯合物等。其中,較佳為由施體材料與受體材 料形成的分子間電荷遷移錯合物。其中,可較佳使用由有機施體與有機受體形成的分子間電荷遷移錯合物。 The conductive layer is not particularly limited as long as it has good conductivity, and examples thereof include an inorganic conductive material, an organic conductive material, a conductive polymer, and an intermolecular charge transport complex. Among them, the donor material and the acceptor material are preferably The intermolecular charge transport complex formed by the material. Among them, an intermolecular charge transport complex formed of an organic donor and an organic acceptor can be preferably used.
此傳導層的厚度無特別限制,較佳為可將多孔質完全埋住的程度。 The thickness of the conductive layer is not particularly limited, and it is preferably such that the porous material can be completely buried.
上述施體材料較佳為分子結構內電子富集的材料。例如,有機施體材料可例舉分子的π電子系統中具有胺基、羥基、醚基、硒或硫原子的材料,具體可列舉苯基胺系、三苯基甲烷系、咔唑系、酚系、四硫富瓦烯系材料。受體材料較佳為分子結構內電子缺乏的材料。例如,有機受體材料可例舉富勒烯、分子的π電子系統中具有硝基、氰基、羧基或鹵素基等取代基的材料,具體可例舉:PCBM([6,6]-phenyl-C61-butyric acid methyl ester)、苯醌系、萘醌系等醌系、芴酮系、四氯苯醌系、四溴苯醌系、四氰基對醌二甲烷系、四氰基乙烯系等。 The above donor material is preferably a material in which electrons are concentrated in the molecular structure. For example, the organic donor material may, for example, be a material having an amine group, a hydroxyl group, an ether group, a selenium or a sulfur atom in a π- electron system of a molecule, and specific examples thereof include a phenylamine system, a triphenylmethane system, an oxazole system, and a phenol. A tetrathiafulvalene-based material. The acceptor material is preferably a material that is deficient in electrons within the molecular structure. For example, the organic acceptor material may, for example, be a material having a substituent such as a nitro group, a cyano group, a carboxyl group or a halogen group in a fullerene or a π-electron system of a molecule, and specifically, a PCBM ([6,6]-phenyl -C61-butyric acid methyl ester), benzoquinone, naphthoquinone, etc., anthraquinone, anthrone, tetrachlorophenylhydrazine, tetrabromophenylhydrazine, tetracyanoquinodimethane, tetracyanoethylene Wait.
如圖1所示,本發明的光電轉換元件是在導電支撐體1上形成感光體層2,此感光體層2是在多孔質的半導體微粒22上吸附增感色素21而成。如後所述,例如可將半導體微粒的分散液塗布於導電支撐體上並乾燥後,浸泡於本發明的色素溶液中,而製造感光體層2。 As shown in Fig. 1, in the photoelectric conversion element of the present invention, a photoreceptor layer 2 is formed on a conductive support 1, and the photoreceptor layer 2 is formed by adsorbing a sensitizing dye 21 on the porous semiconductor fine particles 22. As described later, for example, a dispersion of semiconductor fine particles can be applied onto a conductive support and dried, and then immersed in the dye solution of the present invention to produce a photoreceptor layer 2.
導電支撐體1可使用:如金屬般本身有導電性的支撐體,或表面有導電膜層的玻璃或高分子材料。導電支撐體1較佳為實質上透明,也就是光透射率為10%以上,較佳為50%以上,80%以上尤佳。導電性支撐體1可使用在玻 璃或高分子材料上塗設導電金屬氧化物的支撐體。此時導電金屬氧化物的塗布量,對於玻璃或高分子材料支撐體每1m2較佳為0.1~100g。使用透明導電支撐體時,較佳令光自支撐體側入射。較佳使用的高分子材料可例舉:四乙醯基纖維素(TAC)、聚對苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯(PEN)、間規聚苯乙烯(SPS)、聚苯硫醚(PPS)、聚碳酸酯(PC)、聚芳酯(PAR)、聚碸(PSF)、聚酯碸(PES)、聚醚醯亞胺(PEI)、環狀聚烯烴、溴化苯氧基樹脂等。在導電性支撐體1上,可對表面賦予光管理功能,其可例舉:日本專利特開2003-123859記載的將高折射膜及低折射率的氧化物膜交替積層的抗反射膜、日本專利特開2002-260746記載的導光功能。 As the conductive support 1, a support which is electrically conductive like a metal or a glass or a polymer material having a conductive film layer on its surface can be used. The conductive support 1 is preferably substantially transparent, that is, the light transmittance is 10% or more, preferably 50% or more, and more preferably 80% or more. As the conductive support 1, a support in which a conductive metal oxide is coated on a glass or a polymer material can be used. The amount of the conductive metal oxide applied at this time is preferably 0.1 to 100 g per 1 m 2 of the glass or polymer material support. When a transparent conductive support is used, it is preferred that light is incident from the side of the support. The polymer material to be preferably used may, for example, be tetraethylidene cellulose (TAC), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), or syndiotactic polystyrene ( SPS), polyphenylene sulfide (PPS), polycarbonate (PC), polyarylate (PAR), polyfluorene (PSF), polyester fluorene (PES), polyether phthalimide (PEI), cyclic polymerization Olefin, brominated phenoxy resin, and the like. In the conductive support 1 , a light management function can be applied to the surface, and an antireflection film in which a high refractive film and a low refractive index oxide film are alternately laminated in Japanese Patent Laid-Open Publication No. 2003-123859, The light guiding function described in JP-A-2002-260746.
此外,使用金屬支撐體亦佳,其一例可例舉:鈦、鋁、銅、鎳、鐵、不鏽鋼、銅。該些金屬亦可形成合金。更佳為鈦、鋁、銅,特佳為鈦或鋁。 Further, a metal support is also preferable, and examples thereof include titanium, aluminum, copper, nickel, iron, stainless steel, and copper. These metals can also form alloys. More preferably, it is titanium, aluminum, copper, and particularly preferably titanium or aluminum.
導電性支撐體1上較佳具有紫外光阻斷功能。例如亦可例舉:使可將紫外光變為可見光的螢光材料存在透明支撐體中或其表面的方法,或使用紫外線吸收劑的方法。 The conductive support 1 preferably has an ultraviolet light blocking function. For example, a method in which a fluorescent material capable of converting ultraviolet light into visible light is present in a transparent support or a surface thereof, or a method using an ultraviolet absorber may be exemplified.
在導電性支撐體1上,還可賦予日本專利特開平11-250944號公報等所記載的功能。 The function described in Japanese Laid-Open Patent Publication No. Hei 11-250944, and the like can also be applied to the conductive support 1 .
較佳的導電膜可例舉:金屬(例如鉑、金、銀、銅、鋁、銠、銦等)、碳或導電金屬氧化物(銦-錫複合氧化物、在氧化錫中摻雜氟而成的導電金屬氧化物等)。 Preferred conductive films may be exemplified by metals (e.g., platinum, gold, silver, copper, aluminum, antimony, indium, etc.), carbon or conductive metal oxides (indium-tin composite oxides, doped with fluorine in tin oxide) a conductive metal oxide, etc.).
導電膜的厚度較佳為0.01~30μm,0.03~25μm更佳, 0.05~20μm特佳。 The thickness of the conductive film is preferably 0.01 to 30 μm , more preferably 0.03 to 25 μm , and particularly preferably 0.05 to 20 μm .
導電性支撐體1的表面電阻愈低愈佳,較佳範圍為50Ω/cm2以下,10Ω/cm2以下更佳。下限無特別限制,通常為0.1Ω/cm2左右。 The lower the surface resistance of the conductive support 1 is, the better, preferably 50 Ω/cm 2 or less, more preferably 10 Ω/cm 2 or less. The lower limit is not particularly limited and is usually about 0.1 Ω/cm 2 .
若單元面積變大,則導電膜的電阻值變大,因此亦可配置集電電極。在導電支撐體1與透明導電膜之間亦可配置氣體阻隔膜及防止離子擴散膜的任一種或兩種。氣體阻隔層可使用樹脂膜或無機膜。 When the cell area is increased, the resistance value of the conductive film is increased, so that the collector electrode can also be disposed. Either or both of the gas barrier film and the ion diffusion preventing film may be disposed between the conductive support 1 and the transparent conductive film. A resin film or an inorganic film can be used for the gas barrier layer.
另外,亦可設置含有透明電極與多孔質半導體電極光觸媒的層。透明導電膜亦可為積層結構,較佳的方法例如可在氧化銦錫(ITO)上積層摻氟氧化錫(FTO)。 Further, a layer containing a transparent electrode and a porous semiconductor electrode photocatalyst may be provided. The transparent conductive film may also be a laminated structure, and a preferred method is, for example, laminating fluorine-doped tin oxide (FTO) on indium tin oxide (ITO).
如圖1所示,本發明的光電轉換元件10是在導電支撐體1上形成感光體層2,此感光體層2是增感色素21吸附於多孔質半導體微粒22上而成。如後所述,例如可將半導體微粒22的分散液塗布於導電性支撐體1上並乾燥後,再浸泡於上述色素溶液中,以製造感光體層2。 As shown in FIG. 1, in the photoelectric conversion element 10 of the present invention, a photoreceptor layer 2 is formed on a conductive support 1, and the photoreceptor layer 2 is formed by adsorbing the sensitizing dye 21 on the porous semiconductor fine particles 22. As described later, for example, the dispersion of the semiconductor fine particles 22 can be applied onto the conductive support 1 and dried, and then immersed in the dye solution to produce the photoreceptor layer 2.
半導體微粒22較佳使用金屬的硫屬化物(例如氧化物、硫化物、硒化物等)或鈣鈦礦的微粒。金屬的硫屬化物較佳可例舉:鈦、錫、鋅、鎢、鋯、鉿、鍶、銦、鈰、釔、鑭、釩、鈮,或鉭的氧化物、硫化鎘、硒化鎘等。鈣鈦礦較佳可例舉鈦酸鍶、鈦酸鈣等。該些中特佳者為氧化鈦、氧化鋅、氧化錫、氧化鎢。 As the semiconductor fine particles 22, a chalcogenide of a metal (for example, an oxide, a sulfide, a selenide or the like) or a fine particle of a perovskite is preferably used. The chalcogenide of the metal is preferably exemplified by oxides of titanium, tin, zinc, tungsten, zirconium, hafnium, yttrium, indium, lanthanum, cerium, lanthanum, vanadium, niobium or tantalum, cadmium sulfide, cadmium selenide, etc. . The perovskite is preferably exemplified by barium titanate or calcium titanate. Among these, the best ones are titanium oxide, zinc oxide, tin oxide, and tungsten oxide.
半導體有與導電有關的載子為電子的n型以及載子為 電洞的p型,本發明的元件中,依轉換效率的觀點,較佳使用n型。n型半導體除了不具雜質能階而導帶電子與價電子帶電洞的載子濃度相等的固有半導體(例如本質半導體)外,依照雜質引起的結構缺陷,而存在電子載體濃度高的n型半導體。本發明可較佳使用的n型無機半導體為:TiO2、TiSrO3、ZnO、Nb2O3、SnO2、WO3、Si、CdS、CdSe、V2O5、ZnS、ZnSe、SnSe、KTaO3、FeS2、PbS、InP、GaAs、CuInS2、CuInSe2等。該些中最佳的n型半導體為TiO2、ZnO、SnO2、WO3以及Nb2O3。另外,亦可較佳使用使多種該些半導體複合而成的半導體材料。 The semiconductor has a n-type in which the carrier related to the conduction is electrons and a p-type in which the carrier is a hole. In the element of the present invention, the n-type is preferably used from the viewpoint of conversion efficiency. The n-type semiconductor has an n-type semiconductor having a high electron carrier concentration in addition to an intrinsic semiconductor having a carrier concentration equal to a carrier concentration of a valence electron-charged hole (for example, an intrinsic semiconductor), without an impurity level. The n-type inorganic semiconductors which can be preferably used in the present invention are: TiO 2 , TiSrO 3 , ZnO, Nb 2 O 3 , SnO 2 , WO 3 , Si, CdS, CdSe, V 2 O 5 , ZnS, ZnSe, SnSe, KTaO. 3 , FeS 2 , PbS, InP, GaAs, CuInS 2 , CuInSe 2 and the like. The most preferred n-type semiconductors are TiO 2 , ZnO, SnO 2 , WO 3 and Nb 2 O 3 . Further, a semiconductor material obtained by compounding a plurality of these semiconductors can also be preferably used.
半導體微粒22的製作法較佳為,作花濟夫的「溶膠-凝膠法的科學」Agne-Shofu公司(1998年)等記載的凝膠-溶膠法。另外,Degussa公司開發的將氯化物在酸氫鹽中藉高溫水解而製作氧化物的方法亦佳。半導體微粒22為氧化鈦時,上述溶膠-凝膠法、凝膠-溶膠法、氯化物在酸氫鹽中的高溫水解法均佳,亦可使用清野學的「氧化鈦物性與應用技術」(技報堂出版,1997年)記載的硫酸法及氯法。另溶膠-凝膠法-較佳為:Barbe等於Journal of the American Ceramic Society,Vol.80,No.12,3157~3171(1997)記載的方法,或Burnside等於Chemistry of Materials,Vol.10,No.9,2419~2425記載的方法。 The method for producing the semiconductor fine particles 22 is preferably a gel-sol method described by Agne-Shofu Co., Ltd. (1998), which is the "Science of Sol-Gel Method" by I. In addition, a method developed by Degussa to produce an oxide by hydrolyzing a chloride in an acid hydrogen salt is also preferable. When the semiconductor fine particles 22 are titanium oxide, the sol-gel method, the gel-sol method, and the high-temperature hydrolysis method of the chloride in the acid hydrogen salt are all preferable, and the "titanium oxide property and application technique" of Kiyono may be used. The sulfuric acid method and the chlorine method described in the Technical Bulletin, 1997). Another sol-gel method - preferably: Barbe is equivalent to the method described in Journal of the American Ceramic Society, Vol. 80, No. 12, 3157 to 3171 (1997), or Burnside is equal to Chemistry of Materials, Vol. 10, No. .9, 2419~2425.
另關於半導體微粒的製造方法,例如二氧化鈦奈米粒子的製造方法較佳可例舉:四氯化鈦火焰水解的方法、四氯化鈦的燃燒法、穩定的硫屬化物錯合物的水解、正鈦酸 的水解、由可溶部分與不溶部分形成半導體微粒後將可溶部分溶解除去的方法、過氧化物水溶液的水熱合成,或溶膠-凝膠法的核/殼結構的氧化鈦微粒的製造方法。 Further, as a method for producing the semiconductor fine particles, for example, a method for producing titanium dioxide nanoparticles is preferably a method of flame hydrolysis of titanium tetrachloride, a combustion method of titanium tetrachloride, and hydrolysis of a stable chalcogenide complex. Orthotitanic acid Hydrolysis, a method of dissolving and removing a soluble portion after forming a semiconductor fine particle from a soluble portion and an insoluble portion, hydrothermal synthesis of a peroxide aqueous solution, or a method of producing a core/shell structured titanium oxide fine particle by a sol-gel method .
二氧化鈦的結晶結構可例舉:銳鈦礦型、板鈦礦型或金紅石型,較佳為銳鈦礦型、板鈦礦型。 The crystal structure of titanium dioxide may, for example, be an anatase type, a brookite type or a rutile type, preferably an anatase type or a brookite type.
亦可將二氧化鈦奈米管、奈米線、奈米棒混合於二氧化鈦微粒中。 A titanium dioxide nanotube, a nanowire, or a nanorod may also be mixed in the titanium dioxide fine particles.
二氧化鈦可摻雜非金屬元素等。二氧化鈦中的添加劑除摻雜劑以外,亦可使用改善聯結(necking)用的黏合劑,或為防止逆向電子遷移而在表面使用添加劑。添加劑的較佳例可舉:ITO、SnO粒子、鬚晶、纖維狀石墨-碳奈米管、氧化鋅聯結結合子、纖維素等纖維狀物質、金屬、有機矽、十二烷基苯磺酸、矽烷化合物等電荷遷移結合分子,及電位傾斜型樹枝狀聚合物等。 Titanium dioxide can be doped with non-metallic elements and the like. Additives in Titanium Dioxide In addition to the dopant, it is also possible to use an adhesive for improving necking or to use an additive on the surface to prevent reverse electron migration. Preferred examples of the additive include ITO, SnO particles, whiskers, fibrous graphite-carbon nanotubes, zinc oxide bonded binders, fibrous substances such as cellulose, metals, organic germanium, and dodecylbenzenesulfonic acid. a charge transporting binding molecule such as a decane compound, and a potential tilting dendrimer.
為除去二氧化鈦上的表面缺陷等,亦可在色素吸附前對二氧化鈦作酸鹼或氧化還原處理。亦可以蝕刻、氧化處理、過氧化氫處理、脫氫處理、UV-臭氧、氧電漿等處理。 In order to remove surface defects and the like on the titanium oxide, the titanium oxide may be subjected to acid-base or redox treatment before the adsorption of the pigment. It can also be etched, oxidized, treated with hydrogen peroxide, dehydrogenated, UV-ozone, oxygen plasma, and the like.
本發明可藉以下方式獲得多孔質半導體微粒塗布層,其將半導體微粒分散液塗布於上述導電支撐體1上,並適度加熱,此半導體微粒分散液中半導體微粒以外的固體成分的含量為半導體微粒分散液總體的10wt%以下。 In the present invention, a porous semiconductor fine particle coating layer can be obtained by applying a semiconductor fine particle dispersion liquid onto the conductive support 1 and heating it moderately, and the content of solid components other than the semiconductor fine particles in the semiconductor fine particle dispersion is semiconductor fine particles. The entire dispersion is 10% by weight or less.
製作半導體微粒分散液的方法除了前述溶膠-凝膠法外,可例舉:在合成半導體時在溶劑中以微粒形態析出而 直接使用的方法、對微粒照射超音波等而粉碎成超微粒的方法,或使用研磨機或乳缽等進行機械粉碎並研散的方法等。分散溶劑可使用水及各種有機溶劑中的一種以上。有機溶劑可例舉:甲醇、乙醇、異丙醇、香茅醇、松油醇等醇類,丙酮等酮類,乙酸乙酯等酯類,二氯甲烷,乙腈等。 The method for producing the semiconductor fine particle dispersion liquid may be, in addition to the sol-gel method described above, in the form of fine particles in a solvent when synthesizing a semiconductor. A method of directly using, a method of pulverizing ultrafine particles by irradiating ultrasonic waves or the like, or a method of mechanically pulverizing and grinding using a grinder or a mortar. As the dispersing solvent, one or more of water and various organic solvents can be used. The organic solvent may, for example, be an alcohol such as methanol, ethanol, isopropanol, citronellol or terpineol, a ketone such as acetone, an ester such as ethyl acetate, dichloromethane or acetonitrile.
分散時,亦可視需要使用少量的例如聚乙二醇、羥基乙基纖維素、羧基甲基纖維素之類的聚合物、界面活性劑、酸,或螯合劑等作為分散助劑。但在導電支撐體上進行製膜步驟前,較佳藉過濾法或使用分離膜的方法或離心分離法等,預先將該些分散助劑大部分除去。半導體微粒分散液中半導體微粒以外的固體成分的含量可設為分散液總體的10wt%以下,較佳5wt%以下,更佳3wt%以下,特佳1wt%以下,尤佳0.5wt%以下,最佳0.2wt%。即,可將半導體微粒分散液中溶劑與半導體微粒以外的固體成分設為分散液總體的10wt%以下,較佳是實質僅含半導體微粒與分散溶劑。 When dispersing, a small amount of a polymer such as polyethylene glycol, hydroxyethyl cellulose, carboxymethyl cellulose, a surfactant, an acid, or a chelating agent may be used as a dispersing aid. However, before the film forming step is performed on the conductive support, it is preferred to remove most of the dispersing aids in advance by a filtration method or a method using a separation membrane or a centrifugal separation method. The content of the solid component other than the semiconductor fine particles in the semiconductor fine particle dispersion liquid may be 10% by weight or less, preferably 5% by weight or less, more preferably 3% by weight or less, particularly preferably 1% by weight or less, and particularly preferably 0.5% by weight or less. Good 0.2wt%. In other words, the solid content of the solvent and the semiconductor fine particles in the semiconductor fine particle dispersion may be 10% by weight or less based on the total amount of the dispersion liquid, and preferably contains only the semiconductor fine particles and the dispersion solvent.
若半導體微粒分散液黏度過高,則會使分散液凝聚而無法製膜,反之,若分散液黏度過低,則會使液體流動而無法製膜。因此,分散液的黏度較佳為在25℃下為10~300N.s/m2,更佳是在25℃下為50~200N.s/m2。 When the viscosity of the semiconductor fine particle dispersion is too high, the dispersion is aggregated and film formation is impossible. Conversely, if the viscosity of the dispersion is too low, the liquid flows and the film cannot be formed. Therefore, the viscosity of the dispersion is preferably 10 to 300 N at 25 ° C. s / m 2 , more preferably 50 ~ 200N at 25 ° C. s/m 2 .
關於半導體微粒分散液的塗布方法,施用(application)系的方法可使用輥法、浸泡法等。另計量(metering)系的方法可使用氣刀法、刀片法等。又,施用系方法與計量系方法的共同方法較佳為:日本專利特公昭58-4589號揭 示的線棒法、美國專利2681294號說明書等記載的滑動漏斗法、壓出塗布法、簾幕法等。又,使用通用機器以旋轉法或噴霧法塗布的方法亦佳。濕式印刷方法較佳為:以凸版、平版及凹版的3大印刷法為代表的凹版、橡膠版、網版印刷等。其中依液體黏度或濕潤厚度選擇較佳的製膜方法。又,本發明的半導體微粒分散液因黏度高並有黏稠性,故凝聚力強,在塗布時會有不與支撐體充分融合的情況。此情況下可藉UV臭氧處理進行表面的清潔與親水化,使所塗布的半導體微粒分散液與導電支撐體1表面的接著力增加,致使半導體微粒分散液的塗布容易進行。 Regarding the method of applying the semiconductor fine particle dispersion, a method of applying the system can be carried out by a roll method, a dipping method, or the like. As another method of metering, an air knife method, a blade method, or the like can be used. Moreover, the common method of the application method and the metrology method is preferably: Japanese Patent Publication No. Sho 58-4589 The sliding bar method, the extrusion coating method, the curtain method, and the like described in the specification of the wire bar method and the specification of U.S. Patent No. 2,681,294. Further, a method of applying a general-purpose machine by a spin method or a spray method is also preferable. The wet printing method is preferably a gravure plate, a rubber plate, a screen printing or the like typified by three major printing methods of relief, lithography and gravure. Among them, a preferred film forming method is selected depending on the liquid viscosity or the wet thickness. Further, since the semiconductor fine particle dispersion of the present invention has high viscosity and is viscous, it has a strong cohesive force and may not be sufficiently fused with the support at the time of coating. In this case, the surface can be cleaned and hydrophilized by UV ozone treatment, and the adhesion of the applied semiconductor fine particle dispersion to the surface of the conductive support 1 is increased, so that the application of the semiconductor fine particle dispersion is facilitated.
半導體微粒層整體的較佳厚度為0.1~100μm,更佳為1~30μm,尤佳為2~25μm。每1m2支撐體上的半導體微粒的承載量較佳為0.5~400g,更佳為5~100g。 The thickness of the semiconductor fine particle layer as a whole is preferably 0.1 to 100 μm , more preferably 1 to 30 μm , and particularly preferably 2 to 25 μm . The carrying amount of the semiconductor fine particles per 1 m 2 of the support is preferably from 0.5 to 400 g, more preferably from 5 to 100 g.
為強化半導體微粒彼此的電子性接觸並提高與支撐體的密合性,且為使所塗布的半導體微粒分散液乾燥,可對塗布層實施加熱處理,以形成多孔質半導體微粒層。 In order to enhance the electronic contact between the semiconductor fine particles and improve the adhesion to the support, and to dry the applied semiconductor fine particle dispersion, the coating layer may be subjected to heat treatment to form a porous semiconductor fine particle layer.
另外,除了加熱處理外,亦可使用光能。例如,用氧化鈦作為半導體微粒22時,可提供紫外光之類的半導體微粒22吸收的光來活化表面,亦可藉雷射光等僅將半導體微粒22表面活化。對半導體微粒22照射其可吸收的光,使吸附於其表面的雜質因其表面活化而分解,即可成為對實現上述目的而言較佳的狀態。組合加熱處理與紫外光時,較佳是對半導體微粒22照射其吸收的光,同時在100℃以上250℃以下或較佳100℃以上150℃以下加熱。如此,藉 由對半導體微粒22進行光激發,可利用光分解清洗混入微粒層內的雜質,並增強微粒之間的物理性接合。 In addition, light energy can be used in addition to heat treatment. For example, when titanium oxide is used as the semiconductor fine particles 22, light absorbed by the semiconductor fine particles 22 such as ultraviolet light can be supplied to activate the surface, and only the surface of the semiconductor fine particles 22 can be activated by laser light or the like. The semiconductor fine particles 22 are irradiated with light that can be absorbed, and the impurities adsorbed on the surface thereof are decomposed by activation of the surface thereof, which is a preferable state for achieving the above object. When the heat treatment and the ultraviolet light are combined, it is preferred to irradiate the semiconductor fine particles 22 with the light absorbed thereby, and to heat at 100 ° C or more and 250 ° C or less, or preferably 100 ° C or more and 150 ° C or less. So, borrow By photoexcitation of the semiconductor fine particles 22, impurities mixed in the fine particle layer can be cleaned by photolysis, and physical bonding between the fine particles can be enhanced.
另外,將半導體微粒分散液塗布於上述導電支撐體1上後,除了加熱或照光以外,亦可進行其他處理。較佳的方法可例舉:通電、化學性處理等。 Further, after the semiconductor fine particle dispersion is applied onto the conductive support 1, the other treatment may be performed in addition to heating or illumination. A preferred method is exemplified by energization, chemical treatment, and the like.
塗布後亦可施加壓力,其方法可例舉日本專利特表2003-500857號公報等的。照光的例子可舉日本專利特開2001-357896號公報等的。電漿、微波、通電的例子可舉日本專利特開2002-353453號公報等的。化學性處理例如可舉日本專利特開2001-357896號公報的。 The pressure may be applied after the application, and the method may, for example, be Japanese Patent Laid-Open Publication No. 2003-500857. Examples of the illumination include Japanese Patent Laid-Open Publication No. 2001-357896. Examples of the plasma, the microwave, and the electric current are exemplified by Japanese Laid-Open Patent Publication No. 2002-353453. For example, JP-A-2001-357896 can be cited as a chemical treatment.
將上述半導體微粒22塗在導電支撐體1上的方法,除了上述將半導體微粒分散液塗布於導電支撐體1上的方法外,可使用日本專利第2664194號公報記載的方法(將半導體微粒22的前驅物塗布於導電支撐體1上,並藉空氣中的水分水解而得半導體微粒膜)等方法。 In the method of applying the semiconductor fine particles 22 to the conductive support 1, in addition to the above method of applying the semiconductor fine particle dispersion onto the conductive support 1, the method described in Japanese Patent No. 2664194 (the semiconductor fine particles 22 can be used). A method in which the precursor is applied to the conductive support 1 and hydrolyzed by moisture in the air to obtain a semiconductor fine particle film).
前驅物可例舉:(NH4)2TiF6、過氧化鈦、金屬烷氧化物-金屬錯合物-金屬有機酸鹽等。 The precursor may, for example, be (NH 4 ) 2 TiF 6 , titanium peroxide, a metal alkoxide-metal complex-metal organic acid salt or the like.
另外可例舉:塗布共存有金屬有機氧化物(烷氧化物等)的漿料,並藉加熱處理、光處理等形成半導體膜的方法;對共存有無機系前驅物的漿料、漿料的pH值及已分散的二氧化鈦粒子的性狀進行特別設定的方法。該些漿料中,若為少量則亦可添加黏合劑,黏合劑可例舉:纖維素、氟聚合物、交聯橡膠、聚鈦酸丁酯、羧基甲基纖維素等。 In addition, a method of forming a semiconductor film by a slurry of a metal organic oxide (such as an alkoxide) and forming a semiconductor film by heat treatment or light treatment, and a slurry or slurry in which an inorganic precursor is present may be used. The pH value and the properties of the dispersed titanium oxide particles are specifically set. Among these slurries, a binder may be added in a small amount, and examples of the binder include cellulose, fluoropolymer, crosslinked rubber, polybutyl titanate, and carboxymethylcellulose.
與半導體微粒22或其前驅物層的形成有關的技術可 例舉:藉由電暈放電、電漿、紫外光等物理性方法進行親水化的方法;藉由鹼或聚乙烯二氧噻吩與聚苯乙烯磺酸等的化學處理;聚苯胺等接合用中間膜的形成等。 Techniques related to the formation of semiconductor particles 22 or their precursor layers For example, a method of hydrophilization by a physical method such as corona discharge, plasma, or ultraviolet light; chemical treatment by alkali or polyethylene dioxythiophene and polystyrenesulfonic acid; and intermediate bonding of polyaniline or the like Formation of a film, etc.
作為將半導體微粒22塗在導電支撐體1上的方法,亦可與上述(1)濕式法併用(2)乾式法、(3)其他方法。(2)乾式法較佳可例舉日本專利特開2000-231943號公報等。(3)其他方法較佳可例舉日本專利特開2002-134435號公報等。 The method of applying the semiconductor fine particles 22 to the conductive support 1 may be carried out in combination with the above (1) wet method (2) dry method or (3) other methods. (2) The dry method is preferably exemplified by Japanese Laid-Open Patent Publication No. 2000-231943. (3) Other methods are preferably Japanese Patent Laid-Open Publication No. 2002-134435.
乾式法可例舉:蒸鍍或濺鍍、氣膠沈積法等。另外,亦可使用電泳法-電析法。 The dry method can be exemplified by evaporation or sputtering, gas deposition, and the like. Alternatively, an electrophoresis-electrolysis method can also be used.
另亦可使用在耐熱基板上暫時製作塗膜後,轉印至塑膠等膜的方法。較佳可例舉:日本專利特開2002-184475號公報記載的經由乙烯-乙酸乙烯酯(EVA)轉印的方法;日本專利特開2003-98977號公報記載的,在包含可藉紫外線、水系溶劑除去的無機鹽的犧牲基板上形成半導體層-導電層後,轉印至有機基板再將犧牲基板除去的方法等。 Alternatively, a method of temporarily producing a coating film on a heat-resistant substrate and transferring it to a film such as plastic may be used. Preferably, the method of transferring by ethylene-vinyl acetate (EVA) described in JP-A-2002-184475, and the ultraviolet-ray, water-based system are described in JP-A-2003-98977. A method in which a semiconductor layer-conductive layer is formed on a sacrificial substrate of a solvent-removed inorganic salt, and then transferred to an organic substrate to remove a sacrificial substrate.
半導體微粒22為能吸附大量增感色素21,較佳有大表面積。例如,在將半導體微粒22塗在導電支撐體1上的情形下,其表面積相對於投影面積較佳為10倍以上,100倍以上更佳。上限無特別限制,通常約5000倍。半導體微粒22的較佳結構例如日本專利特開2001-93591號公報等。 The semiconductor fine particles 22 are capable of adsorbing a large amount of the sensitizing dye 21, and preferably have a large surface area. For example, in the case where the semiconductor fine particles 22 are coated on the conductive support 1, the surface area thereof is preferably 10 times or more, more preferably 100 times or more, with respect to the projected area. The upper limit is not particularly limited and is usually about 5,000 times. A preferred structure of the semiconductor fine particles 22 is, for example, Japanese Laid-Open Patent Publication No. 2001-93591.
通常,半導體微粒層的厚度愈大,單位面積可承載的增感色素21的量愈多,故光吸收效率愈高,但所產生的電子的擴散距離會增大,因此因電荷再結合所引起的損失亦變大。半導體微粒層的較佳厚度因元件用途而異,典型為 0.1~100μm。用於光電化學電池時則較佳為1~50μm,3~30μm更佳。半導體微粒塗布於支撐體上後,為使粒子彼此密接,亦可在100~800℃的溫度下加熱10分鐘~10小時。使用玻璃作為支撐體時,製膜溫度較佳為400~600℃。 Generally, the larger the thickness of the semiconductor fine particle layer, the more the amount of the sensitizing dye 21 that can be carried per unit area, so the higher the light absorption efficiency, but the diffusion distance of the generated electrons increases, and thus the charge recombination is caused. The loss has also increased. The preferred thickness of the semiconductor fine particle layer varies depending on the use of the element, and is typically 0.1 to 100 μm . When used in a photoelectrochemical cell, it is preferably 1 to 50 μm , more preferably 3 to 30 μm . After the semiconductor fine particles are applied to the support, the particles may be heated at a temperature of 100 to 800 ° C for 10 minutes to 10 hours in order to adhere them to each other. When glass is used as the support, the film formation temperature is preferably 400 to 600 °C.
使用高分子材料為支撐體時,較佳在250℃以下製膜後加熱。此時的製膜方法可為(1)濕式法、(2)乾式法、(3)電泳法(包括電析法)的任意一種,較佳為(1)濕式法或(2)乾式法,更佳為(1)濕式法。 When a polymer material is used as the support, it is preferred to heat the film after forming at 250 ° C or lower. The film forming method at this time may be any one of (1) wet method, (2) dry method, and (3) electrophoresis method (including electrodeposition method), and preferably (1) wet method or (2) dry type. The method is more preferably (1) wet method.
另外,每1m2支撐體上的半導體微粒22的塗布量為0.5~500g,5~100g更佳。 Further, the coating amount of the semiconductor fine particles 22 per 1 m 2 of the support is 0.5 to 500 g, preferably 5 to 100 g.
為了使半導體微粒22吸附增感色素21,較佳是在包含溶劑與本發明的色素的色素吸附用色素溶液中,將充分乾燥的半導體微粒22長時間浸泡。色素吸附用色素溶液所用的溶劑只要可溶解本發明的增感色素21即可,使用無特別限制。如此,本發明中溶解金屬錯合物色素組成物的溶劑為有機溶劑,可例舉:非極性溶劑、極性非質子性溶劑、極性質子性溶劑、離子性液體等,較佳可例舉非極性溶劑、極性非質子性溶劑、極性質子性溶劑為較佳對象,例如可使用乙醇、甲醇、異丙醇、甲苯、三級丁醇、乙腈、丙酮、正丁醇、N,N-二甲基甲醯胺、N,N-二甲基乙醯胺等。其中,可較佳使用乙醇、甲苯。 In order to adsorb the sensitizing dye 21 to the semiconductor fine particles 22, it is preferred to immerse the sufficiently dried semiconductor fine particles 22 for a long time in the dye solution for dye adsorption containing the solvent and the dye of the present invention. The solvent used for the dye solution for dye adsorption is not particularly limited as long as it can dissolve the sensitizing dye 21 of the present invention. As described above, the solvent for dissolving the metal complex dye composition in the present invention is an organic solvent, and examples thereof include a nonpolar solvent, a polar aprotic solvent, a polar protic solvent, an ionic liquid, and the like. A polar solvent, a polar aprotic solvent, or a polar protic solvent is preferred, and for example, ethanol, methanol, isopropanol, toluene, tertiary butanol, acetonitrile, acetone, n-butanol, N, N-di can be used. Methylformamide, N,N-dimethylacetamide, and the like. Among them, ethanol and toluene can be preferably used.
本發明中金屬錯合物色素組成物在上述溶劑中的溶解度,在25℃下較佳為100mg/L以上,更佳為105mg/L以上,特佳為110mg/L以上。 The solubility of the metal complex dye composition in the above solvent in the present invention is preferably 100 mg/L or more, more preferably 105 mg/L or more, and particularly preferably 110 mg/L or more at 25 °C.
包含溶劑與本發明的色素的色素吸附用色素溶液可視需要加熱至50~100℃。增感色素21的吸附可在半導體微粒22的塗布前進行,亦可在塗布後進行。另外,亦可將半導體微粒22與增感色素21同時塗布並吸附。未吸附的增感色素21藉清洗除去。塗布膜需煅燒時,增感色素21的吸附較佳在煅燒後進行,特佳是在煅燒後、水吸附於塗布膜表面前快速吸附增感色素21。吸附的增感色素21可為上述色素A1的1種,亦可更混合其他的色素。為儘可能擴大光電轉換的波長區域,可選擇混合色素。在混合色素時,較佳使所有色素溶解而製成色素吸附用色素溶液。 The dye solution for dye adsorption containing the solvent and the dye of the present invention may be heated to 50 to 100 ° C as needed. The adsorption of the sensitizing dye 21 can be carried out before the application of the semiconductor fine particles 22, or after the coating. Further, the semiconductor fine particles 22 and the sensitizing dye 21 may be simultaneously coated and adsorbed. The unadsorbed sensitizing dye 21 is removed by washing. When the coating film is to be calcined, the adsorption of the sensitizing dye 21 is preferably carried out after calcination, and it is particularly preferable to rapidly adsorb the sensitizing dye 21 after the calcination and before the water is adsorbed on the surface of the coating film. The adsorbed sensitizing dye 21 may be one type of the above-mentioned dye A1, and may be further mixed with other dyes. In order to maximize the wavelength region of the photoelectric conversion, a mixed pigment can be selected. When the coloring matter is mixed, it is preferred to dissolve all the pigments to prepare a dye solution for dye adsorption.
增感色素21的用量總體上對每1m2支撐體,較佳為0.01~100毫莫耳,0.1~50毫莫耳更佳,0.1~10毫莫耳尤佳。此時,本發明的增感色素21的用量較佳設為5莫耳%以上。 The amount of the sensitizing dye 21 is generally 0.01 to 100 mmol, preferably 0.1 to 50 mmol, and preferably 0.1 to 10 mmol, per 1 m 2 of the support. At this time, the amount of the sensitizing dye 21 of the present invention is preferably set to 5 mol% or more.
又,相對半導體微粒1g,增感色素21在半導體微粒22上的吸附量較佳為0.001~1毫莫耳,0.1~0.5毫莫耳更佳。 Further, the amount of adsorption of the sensitizing dye 21 on the semiconductor fine particles 22 is preferably 0.001 to 1 mmol, and more preferably 0.1 to 0.5 mmol, relative to the semiconductor fine particles 1 g.
如此設定色素量即可充分獲得半導體的增感效果。相對於此,若色素量少,則增感效果變得不足;若色素量過多,則未附著於半導體的色素浮動而使增感效果降低。 By setting the amount of the dye in this manner, the sensitizing effect of the semiconductor can be sufficiently obtained. On the other hand, when the amount of the pigment is small, the sensitizing effect is insufficient, and when the amount of the dye is too large, the dye that does not adhere to the semiconductor floats and the sensitizing effect is lowered.
另外,為了降低締合等色素彼此的相互作用,可使無色化合物共吸附。共吸附的疏水性化合物可例舉具羧基的類固醇化合物(例如膽酸、特戊醯酸(pivaloyl acid))等。 Further, in order to reduce the interaction between the dyes such as association, the colorless compound may be co-adsorbed. The co-adsorbed hydrophobic compound may, for example, be a steroid compound having a carboxyl group (for example, cholic acid or pivaloyl acid).
在吸附增感色素21後,亦可使用胺類處理半導體微粒22的表面。較佳的胺類可例舉4-三級丁基吡啶、聚乙烯吡啶等。該些為液體時可直接用,亦可溶於有機溶劑而使用。 After the sensitizing dye 21 is adsorbed, the surface of the semiconductor fine particles 22 may be treated with an amine. Preferred examples of the amines include 4-tris-butylpyridine and polyvinylpyridine. These may be used as a liquid or as an organic solvent.
對電極4作為光電化學電池的正極。對極4通常與前述導電支撐體1同義,在充分保持了強度的構成中,未必需要對電極的支撐體,但具有支撐體時則在密閉性方面較為有利。對電極4的材料可例舉:鉑、碳、導電性聚合物等。較佳例可舉:鉑、碳、導電性聚合物。 The counter electrode 4 serves as the positive electrode of the photoelectrochemical cell. The counter electrode 4 is generally synonymous with the above-described conductive support 1, and in the configuration in which the strength is sufficiently maintained, the support for the counter electrode is not necessarily required, but when the support is provided, it is advantageous in terms of hermeticity. The material of the counter electrode 4 may, for example, be platinum, carbon, a conductive polymer or the like. Preferable examples include platinum, carbon, and a conductive polymer.
對電極4的結構較佳為集電效果高的結構,其較佳例可舉日本專利特開平10-505192號公報等。 The structure of the counter electrode 4 is preferably a structure having a high current collecting effect, and a preferred example thereof is disclosed in Japanese Laid-Open Patent Publication No. Hei 10-505192.
受光電極5可使用氧化鈦與氧化錫(TiO2/SnO2)等的複合電極,二氧化鈦的混合電極可例舉日本專利特開2000-113913號公報等。二氧化鈦以外的混合電極可例舉:日本專利特開2001-185243號公報、2003-282164號公報等。 As the light-receiving electrode 5, a composite electrode of titanium oxide and tin oxide (TiO 2 /SnO 2 ) or the like can be used, and a mixed electrode of titanium dioxide can be exemplified by JP-A-2000-113913. The mixed electrode other than titanium dioxide can be exemplified by Japanese Patent Laid-Open Publication No. 2001-185243, No. 2003-282164, and the like.
另外,光電轉換元件的構成亦可具有:依序積層第1電極層、第1光電轉換層、導電層、第2光電轉換層、第2電極層的結構。此時,第1與第2光電轉換層所用的色素可相同或不同;所用色素不同時,較佳為吸收光譜不同。 Further, the photoelectric conversion element may have a configuration in which the first electrode layer, the first photoelectric conversion layer, the conductive layer, the second photoelectric conversion layer, and the second electrode layer are laminated in this order. In this case, the dyes used for the first and second photoelectric conversion layers may be the same or different, and when the dyes used are different, the absorption spectra are preferably different.
受光電極5為了提高入射光的利用率等亦可形成串聯型。串聯型的較佳構成例可例舉:日本專利特開2000-90989、日本專利特開2002-90989號公報等所記載者。 The light receiving electrode 5 can also be formed in series in order to increase the utilization rate of incident light or the like. The preferred embodiment of the tandem type is exemplified by Japanese Patent Laid-Open No. 2000-90989, Japanese Patent Laid-Open No. 2002-90989, and the like.
在受光電極5的層內部亦可設置有效進行光散射、反射的光管理功能,較佳可例舉:日本專利特開2002-93476號公報記載的功能。 A light management function for efficiently performing light scattering and reflection may be provided inside the layer of the light-receiving electrode 5, and a function described in Japanese Laid-Open Patent Publication No. 2002-93476 is preferably exemplified.
為防止因電解液與電極直接接觸而引起的逆電流,導電支撐體1與多孔質半導體微粒層之間較佳形成防短路層,其較佳例可例舉日本專利特開平06-507999號公報等。 In order to prevent a reverse current caused by the direct contact between the electrolyte and the electrode, a short-circuit prevention layer is preferably formed between the conductive support 1 and the porous semiconductor fine particle layer, and a preferred example thereof is a Japanese Patent Publication No. 06-507999. Wait.
為防止受光電極5與對電極4接觸,較佳使用間隔物或間隔件,較佳例可舉日本專利特開2001-283941號公報。 In order to prevent the light-receiving electrode 5 from coming into contact with the counter electrode 4, a spacer or a spacer is preferably used. A preferred example is JP-A-2001-283941.
單元、模組的密封法較佳為:使用聚異丁烯系熱硬化樹脂、清漆樹脂、光硬化性(甲基)丙烯酸酯樹脂、環氧樹脂、離子聚合物樹脂、玻璃粉、氧化鋁中的烷氧化鋁的方法;對低熔點玻璃糊進行雷射熔融的方法等。使用玻璃粉時,可將粉末玻璃混合至作為黏合劑的丙烯酸系樹脂中。 The sealing method of the unit and the module is preferably: using a polyisobutylene thermosetting resin, a varnish resin, a photocurable (meth) acrylate resin, an epoxy resin, an ionic polymer resin, a glass powder, and an alkane in the alumina. A method of alumina; a method of laser melting a low-melting glass paste, and the like. When glass frit is used, the powder glass can be mixed into an acrylic resin as a binder.
以下依實例更詳細地說明本發明,但本發明不限於此。 Hereinafter, the present invention will be described in more detail by way of examples, but the invention is not limited thereto.
藉由以下的(1)利用外部加熱的方法、(2)利用微波加熱的方法,製備金屬錯合物的粗純化物,然後藉由2.純化。 The crude purified product of the metal complex was prepared by the following method (1) by external heating and (2) by microwave heating, and then purified by 2.
利用以下所示的方法製備上述具體例所示的通式(1)的金屬錯合物色素中的D-20的粗純化物。 The crude purified product of D-20 in the metal complex dye of the general formula (1) shown in the above specific example was prepared by the method shown below.
將25g的d-1-1、3.8g的Pd2(dba)3、8.6g三苯基膦、2.5g碘化銅、25.2g 1-庚炔在70mL三乙基胺、50mL四氫呋喃中在室溫下攪拌,再於80℃下攪拌4.5小時。濃縮 後以管柱層析法純化,而得26.4g的化合物d-1-2。 25 g of d-1-1, 3.8 g of Pd 2 (dba) 3 , 8.6 g of triphenylphosphine, 2.5 g of copper iodide, 25.2 g of 1-heptyne in 70 mL of triethylamine, 50 mL of tetrahydrofuran in the chamber The mixture was stirred at a temperature and further stirred at 80 ° C for 4.5 hours. After concentration, it was purified by column chromatography to give 26.4 g of Compound d-1-2.
將6.7g的d-1-3在氮氣環境、-15℃下溶於200mL四氫呋喃(THF)中,相對於d-1-3滴加2.5當量的另行製備的二異丙基醯胺鋰(LDA),攪拌75分鐘。然後滴加將15g的d-1-2溶於30mL THF所得溶液,在0℃下攪拌1小時,再於室溫下攪拌整夜。濃縮後添加150mL水,用150mL二氯甲烷分液、萃取,以鹽水清洗有機層,並將有機層濃縮。所得的結晶以甲醇再結晶,而得18.9g的d-1-4。 6.7 g of d-1-3 was dissolved in 200 mL of tetrahydrofuran (THF) under nitrogen atmosphere at -15 ° C, and 2.5 equivalents of separately prepared lithium diisopropylamide (LDA) was added dropwise to d-1-3. ), stirring for 75 minutes. Then, a solution obtained by dissolving 15 g of d-1-2 in 30 mL of THF was added dropwise, stirred at 0 ° C for 1 hour, and stirred at room temperature overnight. After concentration, 150 mL of water was added, and the mixture was separated and extracted with 150 mL of dichloromethane, and the organic layer was washed with brine, and the organic layer was concentrated. The obtained crystals were recrystallized from methanol to give 18.9 g of d-1-4.
將13.2g的d-1-4、1.7g PPTS(對甲苯磺酸吡啶鎓)添入1000mL甲苯,在氮氣環境下加熱迴流5小時。濃縮後以飽和碳酸氫鈉水溶液及二氯甲烷分液,濃縮有機層,將所得結晶以甲醇及二氯甲烷再結晶而得11.7g的d-1-5。 13.2 g of d-1-4, 1.7 g of PPTS (pyridinium p-toluenesulfonate) was added to 1000 mL of toluene, and the mixture was heated under reflux for 5 hours under a nitrogen atmosphere. After concentrating, the organic layer was concentrated with EtOAc EtOAc m.
藉外部加熱錯合物化,而製備金屬錯合物色素D-20。將以上合成的3.0g的d-1-5、1.64g的d-1-6添入35mL DMF(二甲基甲醯胺)中,在暗室中70℃下攪拌90分鐘。此時自外部藉油浴加熱。然後添加1.3g的d-1-7,並添加270mL DMF,在160℃下加熱攪拌150分鐘。此時自外部藉油浴加熱。然後添加14.25g硫氰酸銨並在130℃下攪拌5小時。此時自外部藉油浴加熱。濃縮後添加300mL水進行過濾,以二乙醚清洗,而得D-20的粗純化物。 The metal complex dye D-20 was prepared by external heating and complexation. 3.0 g of d-1-5 and 1.64 g of d-1-6 synthesized above were added to 35 mL of DMF (dimethylformamide), and stirred at 70 ° C for 90 minutes in a dark room. At this time, it is heated from the outside by an oil bath. Then, 1.3 g of d-1-7 was added, and 270 mL of DMF was added, and the mixture was stirred under heating at 160 ° C for 150 minutes. At this time, it is heated from the outside by an oil bath. Then 14.25 g of ammonium thiocyanate was added and stirred at 130 ° C for 5 hours. At this time, it is heated from the outside by an oil bath. After concentration, 300 mL of water was added for filtration, and the mixture was washed with diethyl ether to give a crude purified product.
用以下所示的方法製備上述具體例所示的通式(1)的金屬錯合物色素中的D-10的粗純化物。 A crude purified product of D-10 in the metal complex dye of the above formula (1) shown in the above specific examples was prepared by the method shown below.
藉由以下方法製備化合物d-2-5。 Compound d-2-5 was prepared by the following method.
將25g的d-2-1溶於500mL THF並以冰浴冷卻,滴加1.05當量的正丁基鋰(1.6mol/L己烷溶液)。然後滴加1.5當量的二甲基甲醯胺,在室溫下攪拌1小時。滴加飽和氯化銨水溶液,並進行分液、萃取。濃縮後利用減壓蒸餾進行純化,而得25.6g的化合物d-2-2。 25 g of d-2-1 was dissolved in 500 mL of THF and cooled in an ice bath, and 1.05 equivalent of n-butyllithium (1.6 mol/L hexane solution) was added dropwise. Then, 1.5 equivalent of dimethylformamide was added dropwise, and the mixture was stirred at room temperature for 1 hour. Saturated aqueous ammonium chloride solution was added dropwise, and liquid separation and extraction were carried out. After concentration, it was purified by distillation under reduced pressure to give 25.6 g of Compound d-2-2.
在製備(a)的金屬錯合物色素D-20時,將製備d-1-4所用的d-1-2換成d-2-2,以相同方式使用d-2-3製備d-2-4。 In the preparation of the metal complex dye D-20 of (a), d-1-2 used for the preparation of d-1-4 is replaced by d-2-2, and d-2-3 is used in the same manner to prepare d- 2-4.
在製備(a)的金屬錯合物色素D-20時,將製備d-1-5所用的d-1-4變更為d-2-4,此外,以相同的方式製備d-2-5。 In the preparation of the metal complex dye D-20 of (a), the d-1-4 used for the preparation of d-1-5 was changed to d-2-4, and further, d-2-5 was prepared in the same manner. .
藉外部加熱錯合物化,而製備金屬錯合物色素D-10的粗純化物。 A crude purified product of the metal complex dye D-10 was prepared by external heating and complexation.
將(a)中製備D-20時所使用的d-1-5換成d-2-5,除此以外,以相同的方式製備D-10的粗純化物。 The crude purified product of D-10 was prepared in the same manner except that d-1-5 used in the preparation of D-20 in (a) was replaced by d-2-5.
將3.0g化合物d-1-5與1.64g的d-1-6加入35mL DMF中,在暗室中照微波(頻率2.45GHz)並在70℃下攪拌10分鐘。然後加1.3g的d-1-7,並添加270mL DMF,藉上述微波在160℃下加熱攪拌10分鐘。然後加14.25g硫氰酸銨,藉上述微波在130℃下攪拌10分鐘。濃縮後添加300mL水再過濾,並以二乙醚清洗,而得粗純化物D-20。 3.0 g of compound d-1-5 and 1.64 g of d-1-6 were added to 35 mL of DMF, and microwaved (frequency 2.45 GHz) in a dark room and stirred at 70 ° C for 10 minutes. Then, 1.3 g of d-1-7 was added, and 270 mL of DMF was added, and the mixture was heated and stirred at 160 ° C for 10 minutes by the above microwave. Then, 14.25 g of ammonium thiocyanate was added, and the mixture was stirred at 130 ° C for 10 minutes by the above microwave. After concentration, 300 mL of water was added and filtered, and the mixture was washed with diethyl ether to give crude purified D-20.
將(1)(b)的外部加熱改成微波加熱(條件與(2)(a)相同),此外,以相同方式獲得2.5g的D-10的粗純化物。 The external heating of (1) (b) was changed to microwave heating (conditions were the same as (2) (a)), and further, 2.5 g of a crude purified product of D-10 was obtained in the same manner.
1.將(1)(a)所得金屬錯合物色素D-20的粗純化物與氫氧化四丁基銨(TBAOH)一起溶於甲醇溶液中,以Sephadex LH-20(GE Healthcare公司製商品名)管柱純化。將主層的餾分回收並濃縮後加硝酸0.2M而得沈澱物。過濾後以水及二乙醚清洗,而得以D-17為主成分的包含通式(5)的金屬錯合物色素及通式(6)的金屬錯合物色素中至少1種的金屬錯合物色素組成物。管柱純化時,對200mg粗純化物使用50g的載液,將實施管柱純化的次數改成1~4次,而得包含通式(5)的金屬錯合物色素及通式(6)的金屬錯合物色素中至少1種的金屬錯合物色素組成物(實例1~4)。 1. The crude purified product of the metal complex dye D-20 obtained in (1) (a) was dissolved in a methanol solution together with tetrabutylammonium hydroxide (TBAOH) to Sephadex LH-20 (product of GE Healthcare). Name) Column purification. The fraction of the main layer was recovered and concentrated, and then 0.2 M of nitric acid was added to obtain a precipitate. After filtration, it is washed with water and diethyl ether, and at least one metal containing the metal complex dye of the formula (5) and the metal complex dye of the formula (6) having D-17 as a main component is misaligned. Pigment composition. When the column is purified, 50 g of the carrier liquid is used for 200 mg of the crude purified product, and the number of times of performing the column purification is changed to 1 to 4 times, thereby obtaining the metal complex dye of the general formula (5) and the general formula (6). At least one metal complex pigment composition of the metal complex dye (Examples 1-4).
以相同方法純化(1)(b)所得的金屬錯合物色素D-10的粗純化物,而得以D-11為主成分的包含通式(5)的金屬錯合物色素及通式(6)的金屬錯合物色素中至少1種的金屬錯合物色素組成物(實例5~8)。另外,將所得金屬錯合物色素組成物進一步與氫氧化四丁基銨一起溶於甲醇溶液,滴加0.1N硝酸甲醇溶液至pH=0,而得以D-10為主成分的包含通式(5)的金屬錯合物色素及通式(6)的金屬錯合物色素中至少1種的金屬錯合物色素組成物(實例9~12)。 The crude purified product of the metal complex dye D-10 obtained in (1)(b) is purified in the same manner, and the metal complex dye containing the general formula (5) and the general formula (D-11) are used as the main component. 6) A metal complex dye composition of at least one of the metal complex dyes (Examples 5 to 8). In addition, the obtained metal complex dye composition is further dissolved in a methanol solution together with tetrabutylammonium hydroxide, and a 0.1 N methanol solution of nitric acid is added dropwise to pH=0 to obtain a general formula of D-10 as a main component ( At least one metal complex dye composition of the metal complex dye of 5) and the metal complex dye of the formula (6) (Examples 9 to 12).
為與(1)比較,以與(1)相同的方法純化1.(2)(a)所得的以微波加熱製備的金屬錯合物色素D-20的粗純化物,而得以D-17為主成分的包含通式(5)的金屬錯合物色素及通 式(6)的金屬錯合物色素中至少1種的金屬錯合物色素組成物(比較例1~3)。另外,以相同方法純化1.(2)(b)所得的金屬錯合物色素D-10的粗純化物,而得以D-11為主成分的包含通式(5)的金屬錯合物色素及通式(6)的金屬錯合物色素中至少1種的金屬錯合物色素組成物(比較例5~7)。另外,將所得金屬錯合物色素組成物進一步與氫氧化四丁基銨一起溶於甲醇溶液,滴加0.1N的硝酸甲醇溶液直至pH=0,而得以D-10為主成分的包含通式(5)的金屬錯合物色素及通式(6)的金屬錯合物色素中至少1種的金屬錯合物色素組成物(比較例9~11)。 For comparison with (1), the crude purified product of the metal complex dye D-20 prepared by microwave heating obtained in 1. (2) (a) was purified in the same manner as (1), and D-17 was obtained. a metal complex dye containing the general formula (5) as a main component At least one metal complex dye composition of the metal complex dye of the formula (6) (Comparative Examples 1 to 3). Further, the crude purified product of the metal complex dye D-10 obtained in 1. (2) (b) was purified in the same manner, and the metal complex dye containing the general formula (5) having D-11 as a main component was purified. And at least one metal complex dye composition of the metal complex dye of the formula (6) (Comparative Examples 5 to 7). Further, the obtained metal complex dye composition was further dissolved in a methanol solution together with tetrabutylammonium hydroxide, and a 0.1 N methanol solution of nitric acid was added dropwise until pH=0, and the general formula of D-10 was contained. At least one metal complex dye composition of the metal complex dye of (5) and the metal complex dye of the formula (6) (Comparative Examples 9 to 11).
以HPLC純化1.(1)(a)所得粗純化物,其先在氫氧化四丁基銨的甲醇溶液中溶解粗純化物,再用資生堂製Capcell Pak UG120 30mm×250mm的LC分取用管柱純化,溶離液組成設為甲醇/水=85/15~95/5。將主層的分部回收並濃縮後加0.2M硝酸而得沈澱物。過濾後以水及二乙醚清洗,而得3.2g的通式(1)所示金屬錯合物色素D-17(比較例4)。 The crude purified product of 1.(1)(a) was purified by HPLC, and the crude purified product was first dissolved in a solution of tetrabutylammonium hydroxide in methanol, and then Caps Pak UG120 was made by Shiseido. The 30 mm × 250 mm LC fractionation column was purified, and the composition of the eluent was set to methanol/water = 85/15 to 95/5. The fraction of the main layer was recovered and concentrated, and 0.2 M nitric acid was added to obtain a precipitate. After filtration, it was washed with water and diethyl ether to obtain 3.2 g of a metal complex dye D-17 of the formula (1) (Comparative Example 4).
所得金屬錯合物色素D-17的結構以核磁共振(NMR)測定及液相層析-質譜(LC-MS)進行確認。 The structure of the obtained metal complex dye D-17 was confirmed by nuclear magnetic resonance (NMR) measurement and liquid chromatography-mass spectrometry (LC-MS).
1H-NMR(DMSO-d6、400MHz):芳香族區δ(ppm):9.37(1H,d),9.11(1H,d),9.04(1H,s),8.89(2H),8.74(1H,s),8.26(1H,d),8.10-7.98(2H),7.85-7.73(2H),7.60(1H,d),7.45-7.33(2H),7.33-7.12(5H,m),6.92(1H,d) 1 H-NMR (DMSO-d 6 , 400 MHz): Aromatic region δ (ppm): 9.37 (1H, d), 9.11 (1H, d), 9.04 (1H, s), 8.89 (2H), 8.74 (1H) , s), 8.26 (1H, d), 8.10-7.98 (2H), 7.85-7.73 (2H), 7.60 (1H, d), 7.45-7.33 (2H), 7.33-7.12 (5H, m), 6.92 ( 1H,d)
MS-ESI m/z:1023.143(M+H)+ MS-ESI m/z: 1023.143 (M+H) +
將所得金屬錯合物色素D-17(比較例8)溶於四氫呋喃:水=63:37(0.1%三氟乙酸)中,製備濃度8.5μmol/L的溶液,使用U-4100 spectrophotometer(日立公司製商品)進行分光吸收測量,結果吸收極大波長為568nm。 The obtained metal complex dye D-17 (Comparative Example 8) was dissolved in tetrahydrofuran:water = 63:37 (0.1% trifluoroacetic acid) to prepare a solution having a concentration of 8.5 μmol/L, using U-4100 spectrophotometer (Hitachi Corporation). The product was subjected to spectral absorption measurement, and the absorption maximum wavelength was 568 nm.
同樣地,金屬錯合物色素D-11(比較例8)亦使用1.(1)(b)所得的粗純化物,以HPLC純化而得。 Similarly, the metal complex dye D-11 (Comparative Example 8) was also purified by HPLC using the crude purified product obtained in 1. (1) (b).
MS-ESI m/z:1003.2(M+H)+ MS-ESI m/z: 1003.2 (M+H) +
然後,溶於THF:水=63:37(0.1%三氟乙酸)以製備濃度8.5μmol/L的溶液,用U-4100spectrophotometer(日立公司製)進行分光吸收測量,結果吸收極大波長為566nm。 Then, it was dissolved in THF:water = 63:37 (0.1% trifluoroacetic acid) to prepare a solution having a concentration of 8.5 μmol/L, and subjected to spectral absorption measurement using a U-4100 spectrophotometer (manufactured by Hitachi, Ltd.), and the absorption maximum wavelength was 566 nm.
將所得金屬錯合物色素D-11與氫氧化四丁基銨一起溶於甲醇溶液,滴加0.1N硝酸甲醇溶液直至pH=0,而獲得D-10(比較例12)。 The obtained metal complex dye D-11 was dissolved in a methanol solution together with tetrabutylammonium hydroxide, and a 0.1 N methanolic solution of nitric acid was added dropwise until pH = 0 to obtain D-10 (Comparative Example 12).
MS-ESI m/z:1003.2(M+H)+ MS-ESI m/z: 1003.2 (M+H) +
然後,溶於THF:水=63:37(0.1%三氟乙酸)以製備濃度8.5μmol/L的溶液,用U-4100spectrophotometer(日立公司製)進行分光吸收測量,結果吸收極大波長為571nm。 Then, it was dissolved in THF:water = 63:37 (0.1% trifluoroacetic acid) to prepare a solution having a concentration of 8.5 μmol/L, and subjected to spectral absorption measurement using a U-4100 spectrophotometer (manufactured by Hitachi, Ltd.), and the absorption maximum wavelength was 571 nm.
根據以下(a)~(b)鑑定2.所得金屬錯合物色素組成物中所含的金屬錯合物色素,並求出其含有率,其值示於表1。 The metal complex dye contained in the obtained metal complex dye composition was identified by the following (a) to (b), and the content thereof was determined. The values are shown in Table 1.
依以下條件對2.所得金屬錯合物色素組成物作HPLC測量。通式(5)的金屬錯合物色素及/或通式(6)的金屬錯合 物色素的含有比例,與後述的LC-MS測量結果一起,藉由鑑定具有CN配位基的金屬錯合物而求出。 The obtained metal complex pigment composition was subjected to HPLC measurement under the following conditions. Metal complex dye of the formula (5) and/or metal of the formula (6) The content ratio of the dye is determined by identifying a metal complex having a CN ligand together with the LC-MS measurement results described later.
使用設備:系統控制器SCL-10AVP Use equipment: system controller SCL-10AVP
管柱烘箱CTO-10ASVP Column oven CTO-10ASVP
檢測器SPD-10AVVP Detector SPD-10AVVP
除氣器DGU-14AM Deaerator DGU-14AM
送液單元LC-10ADVP(島津公司製商品名) Liquid supply unit LC-10ADVP (trade name of Shimadzu Corporation)
管柱:YMC-Pack ODS-AM、型號AM-312 Column: YMC-Pack ODS-AM, model AM-312
尺寸150×6.0mmI.D.(YMC Co.,Ltd.Japan公司製造) Dimensions 150×6.0 mm I.D. (manufactured by YMC Co., Ltd. Japan)
流量:0.75mL/min Flow rate: 0.75mL/min
溶離液:THF/水=63/37含有0.1%三氟乙酸 Dissolution: THF/water = 63/37 containing 0.1% trifluoroacetic acid
溫度:40℃ Temperature: 40 ° C
檢測波長:254nm Detection wavelength: 254nm
測量金屬錯合物色素組成物的LC-MS以鑑定金屬錯合物色素組成物所含金屬錯合物色素的結構。LC-MS是藉由以下方法來進行。 The LC-MS of the metal complex pigment composition was measured to identify the structure of the metal complex pigment contained in the metal complex pigment composition. LC-MS was carried out by the following method.
裝置:Applied Biosystems QSTAR pulser(商品名)、Applied Biosystems公司製造 Device: Applied Biosystems QSTAR pulser (trade name), manufactured by Applied Biosystems
離子化法:ESI-posi Ionization method: ESI-posi
檢測法:TOF-MS Detection method: TOF-MS
管柱:YMC-Pack ODS-AM、型號AM-312 Column: YMC-Pack ODS-AM, model AM-312
尺寸150×6.0mmI.D.(YMC Co.,Ltd.Japan製造) Dimensions 150 × 6.0 mm I.D. (manufactured by YMC Co., Ltd. Japan)
流量:0.75mL/min Flow rate: 0.75mL/min
溶離液:THF/水=63/37含有0.1%三氟乙酸 Dissolution: THF/water = 63/37 containing 0.1% trifluoroacetic acid
溫度:40℃ Temperature: 40 ° C
以D-17為主成分的金屬錯合物色素組成物所含的通式(5)的金屬錯合物色素及通式(6)的檢測為以下結構。又,酸性基的對離子因溶離液含有三氟乙酸而檢測為質子。金屬錯合物組成物中,對離子可為質子或四丁基銨。 The metal complex dye of the formula (5) contained in the metal complex dye composition containing D-17 as a main component and the formula (6) were detected as follows. Further, the acidic group of counter ions was detected as a proton by the trifluoroacetic acid contained in the elution solution. In the metal complex composition, the counter ion may be proton or tetrabutylammonium.
MS-ESI m/z:991.163(M+H)+ 959.194(M+H)+ MS-ESI m/z: 991.163 (M+H) + 959.194 (M+H) +
吸收極大波長:542nm 515nm Absorption maximum wavelength: 542nm 515nm
以D-11為主成分的金屬錯合物色素組成物及以D-10為主成分的金屬錯合物色素組成物中所含的通式(5)的金屬錯合物色素及通式(6)的均檢測為以下結構。另外,酸性基的對離子因溶離液含有三氟乙酸而檢測為質子,但金屬錯合物組成物中對離子可為質子或四丁基銨。 a metal complex dye composition containing D-11 as a main component and a metal complex dye of the formula (5) contained in a metal complex dye composition containing D-10 as a main component and a general formula ( All of 6) were detected as the following structures. Further, the acidic group counter ion is detected as a proton by the trifluoroacetic acid in the eluate, but the counter ion in the metal complex composition may be a proton or tetrabutylammonium.
MS-ESI m/z:971.194(M+H)+ 939.223(M+H)+ MS-ESI m/z: 971.194 (M+H) + 939.223 (M+H) +
吸收極大波長:540nm 513nm Maximum absorption wavelength: 540nm 513nm
使表1所示各金屬錯合物色素組成物12mg在暗室中溶於50mL甲苯及50mL甲醇的混合溶劑中,在25℃下用攪拌翼攪拌15分鐘得色素溶液。使用上述3.的方法所用的HPLC裝置對此溶液中通式(1)所示金屬錯合物色素的溶解量作定量。將溶解量為11.0mg以上12.0mg以下標為A,10.0mg以上小於11.0mg標為B,9.0mg以上小於10.0mg標為C,小於9.0mg標為D,其中A及B為合格。 12 mg of each of the metal complex dye compositions shown in Table 1 was dissolved in a mixed solvent of 50 mL of toluene and 50 mL of methanol in a dark room, and the mixture was stirred at 25 ° C for 15 minutes with a stirring blade to obtain a dye solution. The amount of the metal complex dye represented by the formula (1) in the solution was quantified using the HPLC apparatus used in the above method. The dissolved amount is 11.0 mg or more and 12.0 mg or less is marked as A, 10.0 mg or more and less than 11.0 mg is marked as B, 9.0 mg or more and less than 10.0 mg is marked as C, and less than 9.0 mg is marked as D, wherein A and B are qualified.
以濺鍍法在玻璃基板上形成摻氟氧化錫作為透明導電膜,用雷射切割之,而將透明導電膜分割成2個部分。 A fluorine-doped tin oxide is formed on the glass substrate by a sputtering method as a transparent conductive film, and the transparent conductive film is divided into two portions by laser cutting.
接著,在包含體積比4:1的水與乙腈的100mL混合溶劑中調配32g銳鈦礦型氧化鈦(日本Aerosil公司製P-25(商品名)),用自轉/公轉併用式的混合調節器均勻分散、混合,而得半導體微粒分散液。將此分散液塗布於透明導 電膜上,在500℃下加熱而製作半導體微粒電極。 Next, 32 g of anatase-type titanium oxide (P-25 (trade name) manufactured by Nippon Aerosil Co., Ltd.) was blended in a 100 mL mixed solvent containing water and acetonitrile in a volume ratio of 4:1, and a mixing regulator was used for the rotation/revolution type. Disperse and mix uniformly to obtain a semiconductor fine particle dispersion. Applying this dispersion to a transparent guide On the electric film, a semiconductor fine particle electrode was produced by heating at 500 °C.
續以相同方式製作含質量比40:60的SiO2粒子與金紅石型氧化鈦的分散液,將此分散液塗在上述受光電極上,在500℃加熱形成絕緣多孔體,再形成碳電極作為對電極。 A dispersion containing SiO 2 particles and rutile-type titanium oxide having a mass ratio of 40:60 was produced in the same manner, and the dispersion was applied onto the above-mentioned light-receiving electrode, and heated at 500 ° C to form an insulating porous body, and then a carbon electrode was formed. Electrode.
接著在表1的金屬錯合物色素組成的乙醇溶液中,將形成了上述絕緣多孔體的玻璃基板浸泡12小時。將染了增感色素的玻璃在4-三級丁基吡啶的10%乙醇溶液中浸泡30分鐘後,用乙醇清洗並自然乾燥。如此所得的感光層的厚度為10μm,半導體微粒的塗布量為20g/m2。 Next, the glass substrate on which the above-mentioned insulating porous body was formed was immersed in an ethanol solution of the metal complex dye composition of Table 1 for 12 hours. The sensitized dyed glass was immersed in a solution of 4-tris-butylpyridine in 10% ethanol for 30 minutes, washed with ethanol and naturally dried. The thickness of the photosensitive layer thus obtained was 10 μm , and the coating amount of the semiconductor fine particles was 20 g/m 2 .
將上述方法製作的半導體微粒電極中的2.3cm2在暗室中40℃下於各色素溶液中泡30分鐘。用10% TBAOH甲醇溶液對色素吸附後的半導體微粒電極進行色素脫附,以HPLC定量各色素的初始吸附量。以與上述3.的方法所用的HPLC相同的方法求出溶液中的溶解量。吸附量1.0mg以上時標為A,0.9mg以上小於1.0mg為B,0.7mg以上小於0.9mg為C,小於0.7mg為D,其中A及B為合格。 2.3 cm 2 of the semiconductor fine particle electrode produced by the above method was bubbled in each dye solution at 40 ° C for 30 minutes in a dark room. The semiconductor microparticle electrode after the dye adsorption was subjected to pigment desorption using a 10% TBAOH methanol solution, and the initial adsorption amount of each pigment was quantified by HPLC. The amount of dissolution in the solution was determined in the same manner as the HPLC used in the method of the above 3. When the adsorption amount is 1.0 mg or more, the label is A, 0.9 mg or more and less than 1.0 mg is B, 0.7 mg or more and less than 0.9 mg is C, and less than 0.7 mg is D, wherein A and B are acceptable.
以濺鍍法在玻璃基板上形成摻氟氧化錫作為透明導電膜,以雷射切割之,而將透明導電膜分割成2個部分。 A fluorine-doped tin oxide is formed on the glass substrate by a sputtering method as a transparent conductive film, which is laser-cut, and the transparent conductive film is divided into two portions.
接著,在包含體積比4:1的水與乙腈的100mL混合溶劑中調配32g銳鈦礦型氧化鈦(日本Aerosil公司製P-25(商品名)),用自轉/公轉併用式的混合調節器均勻分散、 混合,而得半導體微粒分散液。將此分散液塗布於透明導電膜上,在500℃下加熱而製作半導體微粒電極。 Next, 32 g of anatase-type titanium oxide (P-25 (trade name) manufactured by Nippon Aerosil Co., Ltd.) was blended in a 100 mL mixed solvent containing water and acetonitrile in a volume ratio of 4:1, and a mixing regulator was used for the rotation/revolution type. Evenly dispersed, Mixing to obtain a semiconductor fine particle dispersion. This dispersion liquid was applied onto a transparent conductive film, and heated at 500 ° C to prepare a semiconductor fine particle electrode.
續以相同方式製作含質量比40:60的SiO2粒子與金紅石型氧化鈦的分散液,將此分散液塗在上述受光電極上,在500℃加熱形成絕緣多孔體,再形成碳電極作為對電極。 A dispersion containing SiO 2 particles and rutile-type titanium oxide having a mass ratio of 40:60 was produced in the same manner, and the dispersion was applied onto the above-mentioned light-receiving electrode, and heated at 500 ° C to form an insulating porous body, and then a carbon electrode was formed. Electrode.
接著,在4.所製備的表1所示的色素溶液中,將形成了上述絕緣多孔體的玻璃基板浸包12小時。將染了增感色素的玻璃在4-三級丁基吡啶的10%乙醇溶液中浸泡30分鐘後,用乙醇清洗並自然乾燥。如此而得的感光層的厚度為10μm,半導體微粒的塗布量為20g/m2。 Next, the glass substrate on which the above-mentioned insulating porous body was formed was immersed in the dye solution shown in Table 1 prepared for 4 hours. The sensitized dyed glass was immersed in a solution of 4-tris-butylpyridine in 10% ethanol for 30 minutes, washed with ethanol and naturally dried. The thickness of the photosensitive layer thus obtained was 10 μm , and the coating amount of the semiconductor fine particles was 20 g/m 2 .
然後,將半導體微粒電極隔著50μm厚的熱可塑性聚烯烴樹脂片與鉑濺鍍FTO基板對向配置,使樹脂片部熱熔融而將兩極板固定。 Then, the semiconductor fine electrode was placed opposite to the platinum sputtered FTO substrate via a 50 μm-thick thermoplastic polyolefin resin sheet, and the resin sheet portion was thermally melted to fix the two plates.
又,自預先在鉑濺鍍極側開出的注液口注入電解液,並充滿電極間,再用環氧系密封樹脂正式密封周邊部及電解液注液口,在集電端子部塗布銀膠而製作光電轉換元件。 In addition, the electrolyte is injected from the liquid injection port opened in advance on the platinum sputtering electrode side, and the electrode is filled, and the peripheral portion and the electrolyte injection port are completely sealed with the epoxy sealing resin, and silver is applied to the current collecting terminal portion. A photoelectric conversion element is produced by glue.
電解液是使用碘化二甲基丙基咪唑鎓(0.5mol/L)、碘(0.1mol/L)的甲氧基丙腈溶液。 The electrolytic solution was a methoxypropionitrile solution using dimethylpropylimidazolium iodide (0.5 mol/L) and iodine (0.1 mol/L).
使500W氙氣燈(Ushio電機公司製)的光通過AM1.5濾光片(Oriel公司製)及銳截止濾光片(Kenko L-42),以製作不含紫外線的模擬太陽光。光強度為89mW/cm2。 The light of a 500 W xenon lamp (manufactured by Ushio Electric Co., Ltd.) was passed through an AM 1.5 filter (manufactured by Oriel Co., Ltd.) and a sharp cut filter (Kenko L-42) to prepare a simulated sunlight containing no ultraviolet rays. The light intensity was 89 mW/cm 2 .
在前述光電化學電池的導電性玻璃板與鉑蒸鍍玻璃板上分別連接鱷魚夾,使各鱷魚夾連接電流電壓測量裝置 (Keithley SMU238型(商品名))。自導電璃板側對其照射模擬太陽光,以電流電壓測量裝置測量所產生的電。將藉此求出的光電化學電池轉換效率為9.0%以上標為A,8.0%以上小於9.0%標為B,7.0%以上小於8.0%標為C,小於7.0%標為D,其中A及B為合格。 The crocodile clip is respectively connected to the conductive glass plate and the platinum vapor-deposited glass plate of the photoelectrochemical cell, so that the crocodile clips are connected to the current and voltage measuring device. (Keithley SMU238 (trade name)). The simulated sunlight is irradiated from the side of the conductive glass plate, and the generated electricity is measured by a current-voltage measuring device. The photoelectrochemical cell conversion efficiency determined thereby is 9.0% or more and is marked as A, 8.0% or more and less than 9.0% is marked as B, 7.0% or more and less than 8.0% is marked as C, and less than 7.0% is marked as D, wherein A and B are To be qualified.
由表1可知,通式(5)或(6)所示的金屬錯合物色素過多時,光電轉換效率有問題;該些金屬錯合物色素過少時, 色素的溶解量、吸附量及光電轉換效率也都有問題。 As is clear from Table 1, when the metal complex dye represented by the formula (5) or (6) is too large, there is a problem in photoelectric conversion efficiency; when the metal complex dye is too small, The amount of the pigment dissolved, the amount of adsorption, and the photoelectric conversion efficiency also have problems.
相對於此,本發明的金屬錯合物色素組成均可滿足任一種特性。若通式(5)或(6)所示金屬錯合物色素的含量多,則有溶解度提高的傾向;該些金屬錯合物含量>5.0%時,有吸附量變少的傾向,此種情況估計是通式(5)或(6)所示的低轉換效率金屬錯合物色素優先吸附,導致轉換效率降低。 On the other hand, the metal complex dye composition of the present invention can satisfy any of the characteristics. When the content of the metal complex dye represented by the formula (5) or (6) is large, the solubility tends to be improved. When the content of the metal complex is > 5.0%, the amount of adsorption tends to decrease. It is estimated that the low conversion efficiency metal complex pigment represented by the general formula (5) or (6) is preferentially adsorbed, resulting in a decrease in conversion efficiency.
本發明與其實施形態一併說明如上,但只要未特別指定,其不限於說明的任意細節,只要不脫離隨附申請專利範圍所示的發明精神與範圍,則應可在寬廣範圍內解釋。 The present invention is not limited to the details of the invention as set forth in the accompanying claims, unless otherwise specified.
本申請案主張於2011年3月11日向日本申請的日本專利特願2011-054802的優先權,此處參照並引用其內容作為本說明書的記載的一部分。 The present application claims priority to Japanese Patent Application No. 2011-054802, filed on Jan. 11, 2011, the entire disclosure of which is hereby incorporated by reference.
1‧‧‧導電支撐體 1‧‧‧Electrical support
2‧‧‧感光體層 2‧‧‧Photoreceptor layer
3‧‧‧電荷遷移體層 3‧‧‧ Charge transport layer
4‧‧‧對電極 4‧‧‧ opposite electrode
5‧‧‧受光電極 5‧‧‧Photoelectrode
6‧‧‧外部電路 6‧‧‧External circuit
10‧‧‧光電轉換元件 10‧‧‧ photoelectric conversion components
21‧‧‧增感色素 21‧‧‧ Sensitizing pigment
22‧‧‧半導體微粒 22‧‧‧Semiconductor particles
100‧‧‧光電化學電池 100‧‧‧Photoelectrochemical battery
圖1是示意性表示根據本發明而製造的光電轉換元件之一實施形態的剖面圖。 Fig. 1 is a cross-sectional view schematically showing an embodiment of a photoelectric conversion element manufactured according to the present invention.
1‧‧‧導電支撐體 1‧‧‧Electrical support
2‧‧‧感光體層 2‧‧‧Photoreceptor layer
3‧‧‧電荷遷移體層 3‧‧‧ Charge transport layer
4‧‧‧對電極 4‧‧‧ opposite electrode
5‧‧‧受光電極 5‧‧‧Photoelectrode
6‧‧‧外部電路 6‧‧‧External circuit
10‧‧‧光電轉換元件 10‧‧‧ photoelectric conversion components
21‧‧‧增感色素 21‧‧‧ Sensitizing pigment
22‧‧‧半導體微粒 22‧‧‧Semiconductor particles
100‧‧‧光電化學電池 100‧‧‧Photoelectrochemical battery
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US10730894B2 (en) | 2014-08-05 | 2020-08-04 | Korean Research Institute Of Chemical Technology | Method for preparing inorganic/organic hybrid perovskite compound film |
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US20090216021A1 (en) * | 2006-02-08 | 2009-08-27 | Shimane Prefectural Government | Photosensitizer Dye |
US20100101644A1 (en) * | 2008-10-23 | 2010-04-29 | Tripod Technology Corporation | Electrolyte composition and dye-sensitized solar cell (dssc) comprising the same |
CN101928469A (en) * | 2009-06-18 | 2010-12-29 | 精磁科技股份有限公司 | Organic dye and dye-sensitized solar cell (DSSC) using same |
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JP5636317B2 (en) * | 2011-03-11 | 2014-12-03 | 富士フイルム株式会社 | Metal complex dye, metal complex dye composition, photoelectric conversion element and photoelectrochemical cell |
JP2012188401A (en) * | 2011-03-11 | 2012-10-04 | Fujifilm Corp | Method of manufacturing metallic complex, and metallic complex composition |
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