TW201237522A - Method for fabricating and repairing pixel structure and repaired pixel structure - Google Patents

Abstract

A method of repairing pixel structure is provided. The pixel structure includes an active device, a passivation layer and a pixel electrode. The active device includes a gate electrode, a gate insulating layer, a semiconductor layer and a metal layer. The semiconductor layer has a channel region and an opening exposing a portion of the gate insulating layer. A source block and a second drain block of the metal layer are located above a position between two sides of the channel region, and the source block and a first drain block of the are located above a position between two sides of the opening. The pixel electrode is electrically connected to the first drain block via a first contact hole of the passivation layer. The repair method includes the follow steps. A second contact hole passing through the pixel electrode and the passivation layer and exposing a portion of the second drain block is formed. A conductive layer is formed inside the second contact hole and the pixel electrode is electrically connected to the second drain block via the conductive layer.

Description

2〇1237522w 36988twf.doc/I VI. Description of the Invention: [Technical Field] The present invention relates to a repairing method, a repaired structure, and a method for fabricating a halogen structure, and particularly relates to a halogen structure The repair method, the repaired pixel structure, and a method of fabricating a halogen structure using fewer masks. [Prior Art] A liquid crystal display is mainly composed of a thin film transistor array substrate, a color light-emitting array substrate, and a liquid crystal layer. The thin film transistor array substrate is composed of a plurality of array-arranged pixel structures. In general, the method of the halogen structure includes the following steps. First, a gate is formed on a substrate. Next, a gate insulating layer is formed on the substrate to cover the gate. Then, a semiconductor channel layer is formed on the gate insulating layer. Thereafter, a source and a drain are formed over the semiconductor channel layer. Next, a semiconductor channel layer, a source, and a secret are formed on the substrate, and then the contact layer π is formed in the protective layer. Thereafter, a halogen element electrode, a partial filling contact window σ h and a drain electrode are formed on the protective layer. The production of such a pixel structure is substantially completed. The fabrication of the cover structure is mainly through the first light source and the fourth photomask forming electrode. Therefore, the production of the traditional 昼 结构 structure is used 4 201237522

A i lUUioifW 36988twf.doc/I In the prosperous time, the 4-primary structure has a higher chance of producing defects, and the production yield is also lower. f. With the development trend of thin-film electromorphic ship crystal display to large-size production, the fabrication of thin-film transistor array substrate will face many problems, such as yield drop and capacity reduction. Therefore, if the number of masks capable of reducing the structure of the germanium element is reduced, that is, the number of exposure processes for forming the thin film transistor element can be reduced, the manufacturing time can be reduced, the throughput can be increased, the manufacturing cost can be reduced, and the yield can be improved. The industry has proposed a variety of methods '(10) the number of low-light masks. One of the ways is to use half t___k, htm or gray tone mask (GTM) to reduce the number of masks. This method is mainly a half-tone or gray-tone It is used as two masks. After half-tone exposure and development, the gate region is etched, and then the (4) & However, it is not easy to control the optical exposure of the photoresist when using a semi-blow or gray-tone reticle. Therefore, there is a bribe or dot defect. However, the direct scrapping of these discarded LCD panels will result in a significant increase in the manufacturing cost. In general, it is very difficult to rely solely on improved process technology to achieve zero madness, so the cryptic technology of the morpheme structure becomes quite important. SUMMARY OF THE INVENTION The present invention provides a method for repairing a pixel structure for repairing a ruthenium-containing ruthenium structure to improve product yield. The invention provides a repaired pixel structure, which utilizes the above

201237522iw 36988twf.doc/I The pixel structure formed by the patching method. The present invention provides a method of fabricating a pixel structure, which can reduce the number of masks used and has better product reliability. The present invention proposes a patching method for a pixel structure suitable for repairing a pixel structure. The halogen structure is disposed on a substrate, and the halogen structure comprises an active element, a protective layer and a halogen electrode. The active device includes a gate, a gate insulating layer, a semiconductor layer, and a metal layer. The gate is disposed on the substrate. The gate insulating layer is between the semiconductor layer and the gate. The semiconductor layer has a channel region and an opening exposing a portion of the gate insulating layer. The metal layer has a first and a pole block, a second and a pole block, and a source block. The source block and the second drain block are located on both sides of the channel area. The source block is located between the first drain block and the second drain block. The source block and the first drain block are located on both sides of the opening. The protective layer covers the active component and is in direct contact with a portion of the gate insulating layer exposed by the opening. The protective layer has a first contact window. The halogen electrode is disposed on the protective layer and electrically connected to the first drain block through the first contact window. The repairing method comprises: forming a second contact window penetrating through the pixel and the protective layer, wherein the second contact window exposes a portion of the second drain block; and forming a conductive layer in the second contact window, the pixel electrode The electrical connection is electrically connected to the second drain block. In one embodiment of the invention, the method of forming a second contact window includes a laser ablation process. In an embodiment of the invention, the method for forming a conductive layer comprises a local chemical vapor deposition (chemical vap0r dep0siti〇n, cvd) film formation method 0 '6

201237522 1110016ITW 36988twf.doc/I In one embodiment of the invention, the material of the conductive layer comprises a crane. In one embodiment of the invention, the method of forming a conductive layer includes fusing a second drain block through a fusing step. In one embodiment of the invention, the fusion step includes a laser welding process. The present invention also provides a repaired halogen structure comprising an active component bonding layer, a halogen electrode and a conductive layer. The active component is disposed on a substrate and includes a gate, a gate insulating layer, a semiconductor layer, and a metal layer. The gate is located on the substrate. The gate insulating layer is disposed on the substrate and covers the gate. The semiconductor layer is disposed on the gate insulating layer and has a channel region and an opening exposing a portion of the gate insulating layer. The metal layer is disposed on the semiconductor layer and has a first and a polar block, a second non-polar block, and a source block. The source block and the second drain block are located on both sides of the channel area. The source block is located between the first drain block and the second drain block, and the source block and the first drain block are located on both sides of the opening. The protective layer covers the active component and is in direct contact with a portion of the gate insulating layer exposed by the opening. The protective layer has a first contact window. The halogen electrode is disposed on the protective layer and has a second contact window of the passivation electrode and the protective layer. The halogen electrode is electrically connected to the first drain block through the first contact window, and the second connection window exposes a portion of the second drain block. The conductive layer is disposed in the second contact window and the halogen electrode is electrically connected to the second drain block through the conductive layer. In an embodiment of the invention, the material of the conductive layer comprises a crane.

201237522 1110016ITW 36988twf.doc/I In the embodiment of the present invention, the material of the above-mentioned bungee block is substantially the same. The material of the crucible and the second invention are further proposed as a step of the structure of the alizarin. A gate is formed in sequence, and the gate 4 includes a metal layer on the substrate. Forming - light confinement layer two metal = body layer and - between the regions. The portion of the metal layer exposed to the light-shielding layer and the portion of the semiconductor layer exposed thereto is partially corresponding to the metal layer under the blind via and the opening of the portion of the insulating layer is exposed to the == region. 'The metal layer is divided into a first non-polar block, a "and a source block" original pole block and a second 汲: = on both sides of the area. The source block is located at the first gambling block and the second = i =, and the source block and the first non-polar block are located on both sides of the opening, and the sound-protecting layer is on the substrate, wherein the sealing layer is in direct contact. Forming a pixel electrode = t where the money pole passes through the first contact window and the first block, the block ‘j. Forming a second through the pixel electrode and the protective layer: the first: ί = ρ a block in the first contact from the mouth, the pixel electrode through the conductive layer and the second drain block 8

201237522 1110016ITW 36988twf.doc/I Electrical connection. Based on the above, since the present invention uses a gray scale mask to fabricate a metal layer having a first; and a polar block, a first secret block, and a source block, the conductive conductor layer has an overexposed photoresist. When the P# port of the _ edge layer is exposed and the first & pole block loses its function, the second contact window can be formed to electrically connect the conductive layer to the pixel electrode and the second secret block. Repair the 4 prime structure. In this way, the pixel structure that needs to be scrapped can be repaired and reused. Therefore, the repairing method of the gold structure of the present invention can improve the yield of the raw money and the manufacturing cost of the reduced body, and the repaired pixel structure has better reliability. The above features and advantages of the present invention will become more apparent from the following description. [Embodiment] Figs. 1A to 1K are schematic cross-sectional views showing a method of fabricating a halogen structure according to an embodiment of the present invention. Referring first to FIG. 1 , the method for fabricating the pixel structure of the present embodiment includes the following steps. First, a mask 112, a gate insulating layer 114, a semiconductor layer 116, and a metal layer 118 are formed on a substrate 10. The substrate 10 is, for example, a glass substrate, a θ-flexible substrate, or a substrate of another suitable material. The method of forming the gate 112 is, for example, first depositing a conductive layer (not shown), then patterning the conductive layer by lithography and etching procedures, and forming the gate 112. The material of the gate insulating layer 114 is, for example, yttrium oxide or tantalum or a laminate thereof, and the method of forming the gate insulating layer 114 is, for example, a chemical vapor phase.

201237522 lliuoierrw 36988twf.doc/I chemical vapor deposition (CVD). The material of the semiconductor layer i 16 is, for example, amorphous or polycrystalline, based on conductivity considerations, and the gate 112 and the metal layer 118 are generally made of a metal material. However, the present invention is not limited thereto. In other embodiments, the gate 112 and the metal layer ι 8 may also use other conductive materials, such as alloys, nitrides of metal materials, oxides of metal materials, and oxynitrides of metal materials. Or a stack of gold other conductive materials. 〃 Next, please refer to FIG. 1A' to form a photoresist layer 2 on the metal layer □ where the photoresist layer 20 covers a portion of the metal layer 118. Next, referring to FIG. 1B, the photoresist is exposed by a gray scale mask 3', wherein the gray scale mask 3 has a light transmitting area D, a half day area 34, and a light blocking area 36, wherein the light transmitting area % bit and opaque area 36... 千透九& 34 Next 'Please refer to FIG. 1B again, the exposed photoresist layer is developed into 'to form a patterned photoresist layer 2Ga, which causes overexposure, thus causing Patterned photoresist layer 4 =: Port 22 of part of metal layer 118 and - blind hole 24 U = exposure value is from 46 mJ/cm2 to 54 mJ/cm2 n value is from 54 mJ/cm2 to 62 mJ/cm2 between. , Wei, "the exposure is as shown in Figure 1D' with a patterned photoresist layer - an etch mask, which is exposed to σ 22 and a portion of the semiconductor layer m underneath it, and the semiconductor; - a portion of the gate insulating layer is exposed The opening Se of 114 is here: = - the open circuit shouts open de (four). In addition, the removal of the mouth ^ is exposed ^ 201237522

-* * w 36988twf.d〇c/I Part of the metal layer 118 is an I-insulation process. And a portion of the semiconductors below it are, for example, - Figure 1E and Figure 1F, with a patterned photoresist layer applied to the blind -4: metal-channel region 116a. Among them, the second part of the body I 116 forms the genus layer U8 and the part below it; the gold process below. At this time, the method of the thin rule 116 is, for example, (10) 118 to divide the metal layer 118 into the -th-thrace 3: and the pole block 118b and the -source block. /, U block ll8e and second non-polar block U8b are located on both sides of the channel area 116a 'block 118. Between the suspected first-track block and the second non-polar block 118b, and the source block 118c and the first-pole-free block 118a are located on both sides of the opening s. Next, referring to FIG. 1G, the patterned photoresist layer 20a is removed to expose the first drain block 118a, the second drain block 118b, and the source block 118c. Then, referring to FIG. 1H, a protective layer 12 is formed on the substrate 1 , wherein the protective layer 12 has a first contact window C1, and the protective layer 120 covers the metal layer 118 and is partially gated with the opening s. The insulating layer ι14 is in direct contact. Thereafter, please refer to FIG. II to form a halogen electrode 130 on the protective layer 120. The halogen electrode 13 is electrically connected to the first drain block 118a through the first contact window C1. So far, the fabrication of the pixel structure 100 has been substantially completed.

201237522 niwioiTW 36988twf.doc/IM ^ Example of photoresist layer 2 () due to over-exposure _' caused by the subsequent process 'semiconductor layer l4 〇 a break 瑕疵 (〇 pen such as (4), meaning to expose part of the insulation Ϊ́4 opening (10). So "come, the alizarin structure brain will produce bright spots because of this opening s. In view of the above-mentioned breaking circuit, the following will explain how the method of repairing the invention of the invention, to have the structure of the red pixel Next, referring to FIG. 1J, a first contact window C2 is formed through the pixel electrode 130 and the protective layer 120, wherein the second contact window c2 exposes a portion of the second drain block 118b. The method of forming the second contact window C1 is, for example, a laser cutting process. Finally, referring to FIG. 1K, a conductive layer 140 is formed in the second contact window C2, wherein the pixel electrode 13 is transmitted through the conductive layer 14 and The second non-polar block 118b is electrically connected. In this embodiment, the material of the conductive layer 14 is, for example, tungsten and the method of forming the conductive layer 14 is a local chemical vapor deposition (CVD) film formation method. Yes, this hair The method of forming the conductive layer 140 and the second contact window C2 is not limited. In other embodiments, the method of forming the conductive layer 140 and the second contact window 〇2 may also be through laser welding. The second contact window C2 and the second drain block 118b of the soldered portion are simultaneously formed as the conductive layer 14A. That is, in other embodiments, the material of the conductive layer 140 and the second drain block 118b The material is substantially the same. Up to now, the repair of the pixel structure 100 with the broken circuit has been completed to form a repaired halogen structure 1 〇〇a. Structurally, please refer to FIG. 1K for the repaired halogen structure. I〇〇a includes a gate 112, a gate insulating layer 114, a semiconductor layer 116, and a metal layer 118 12

201237522 iiiuuiuiTW 36988twf.doc/I protective layer 120, pixel electrode 130 and conductive layer 140, wherein the gate 112, the gate insulating layer 114, the semiconductor layer 116 and the metal layer 118 constitute an active device 110, and the active device 110 is disposed on On the substrate 10. In detail, the gate 112 is located on the substrate 10. The gate insulating layer 114 is disposed on the substrate 1 and covers the gate 112. The semiconductor layer 116 is disposed on the gate insulating layer 114 and has a via region 116a and an opening S exposing a portion of the gate insulating layer 114. The metal layer 118 is disposed on the semiconductor layer 116 and has a first drain block 118a, a second drain block 118b, and a source block 118c. The source block 118c and the second drain block 118b are located on both sides of the channel region 116a. The source block 118c is located between the first drain block U8a and the second drain block 118b, and the source block 118c and the first drain block 118a are located on both sides of the opening S. The protective layer 120 covers the active device 11A and is in direct contact with a portion of the gate insulating layer 114 exposed by the opening S, wherein the protective layer 120 has a first contact window C1. The pixel electrode 130 is disposed on the protective layer 12' and has a second contact window C2 penetrating the halogen electrode 130 and the protective layer 120. The halogen electrode 130 is electrically connected to the first drain block 118a through the first contact window C1 and the second contact window C2 exposes a portion of the second drain block 118b. The conductive layer 140 is disposed in the second contact window C2, and the halogen electrode 130 is electrically connected to the second drain block 118b through the conductive layer 140. Briefly, the present embodiment is formed by forming a second contact window C2 penetrating the halogen element 130 and the protective layer 120 to expose a portion of the second drain block rib and forming a conductive layer in the second contact window C2. 140 is repaired in such a manner that the halogen electrode 130 is electrically connected to the second drain block ii8b.

丨i w & set rw 36988twf.doc/I The cell structure 100 of the open circuit. In addition to repairing the pixel structure 1a that has to be scrapped, the repair method can be reused to form a repaired halogen structure 100a, which can also improve the yield of the halogen structure 1(8)& and reduce the overall manufacturing. cost. Moreover, since the present embodiment uses a four-pass mask to fabricate the pixel structure, the present embodiment can use fewer masks to reduce the manufacturing cost relative to the five mask processes. And process time. In summary, since the present invention uses a gray scale mask to fabricate a metal layer having a first and a lower pole block, a second drain block, and a source block, the semiconductor is overexposed to the photoresist. The layer has an opening exposing the gate insulating layer, and when the first drain block loses its function, the second contact window can be formed to electrically connect the conductive layer to the second electrode and the second drain block. structure. In this way, the elementary structure that needs to be scrapped can be repaired and reused. Therefore, the repairing method of the present invention improves the yield of the production and reduces the overall formation. The gray scale mask is used to fabricate the pixel structure, because the number of uses is increased to improve the process yield. Although the present invention has been disclosed in the above embodiments, the present invention has the scope of the invention as defined by the scope of the invention.

201237522^36988twf.doc/I FIG. 1A to FIG. 1I are schematic cross-sectional views showing a method of fabricating a halogen structure according to an embodiment of the present invention. [Main component symbol description] 10: Substrate 20: Photoresist layer 20a: Patterned photoresist layer 22: Through hole 24: Blind hole 30: Gray scale mask 32: Light transmissive area 34: Semi-transmissive area 36: Shading area 100 · pixel structure 100a: repaired halogen structure 110: active device 112: gate 114: gate insulating layer 116: semiconductor layer 116a: channel layer 118: metal layer 118a: first stepless block 118b: Diode block 118c: source block 15

36988twf.doc/I 201237522 11 L\J\J i\Ji 120 : Protective layer 130 : Alizarin electrode 140 : Conductive layer C1 : First contact window C2 : Second contact window S : Opening 16

Claims (1)

201237522 1 1 1 W1U1 rw 36988twf.doc/I VII, A please find the profit of the solid 1. The 昼 于 in repair - 昼 structure, pieces, a protective layer and - 昼 element electrode, the active element on the substrate, the _ Edge layer _== its gate formation configuration The semiconductor layer has a -channel region and an opening between the two body layer and the shai gate, the metal layer has a -first-out portion 5 secluded insulation layer - a source block, the source block block=block, a second drain block on both sides of the block, the source block block and the pole block are located between the channel pole block and the _ pole On the two sides of the block and the second turn, the layer of the cover layer is in direct contact with the insulating layer at the portion of the opening, and the exposed window 'the pixel electrode is disposed in the protection' and two:妾: mouth and: the bungee block is electrically connected, the repairing method 3 is = a male wearing the pixel electrode and the first contact window of the protective layer, wherein the second contact window exposes the second 汲(4) (4) The method of repairing the first structure of the patented system, wherein the method of forming the conductive layer includes local chemical vapor deposition ^ 17 36988twf.doc/I 201237522, i vV method. 4. A method of repairing a halogen structure as described in claim 3, wherein the material of the conductive layer comprises tungsten. = If the application is difficult (four)! The repairing method of the (4) structure of the item, wherein the method of forming the conductive layer comprises the step of refining the second drain block by a pass-mixing step. 6. A method of repairing a pixel structure as described in claim 5, wherein the step of melting comprises a laser smelting process ((6) welding (four)). 7. The repaired halogen structure comprises: an active component disposed on a substrate, comprising: a gate on the substrate; a gate insulating layer disposed on the substrate and covering the gate; a semiconductor layer disposed on the gate insulating layer and having a channel region and an opening exposing a portion of the gate insulating layer; and a metal layer disposed on the semiconductor layer and having a first drain region a block, a second drain block, and a source block, wherein the source block and the second drain block are located on both sides of the channel region, and the source block is located at the first drain Between the block and the second drain block, and the source block and the first drain block are located on both sides of the opening; the protective layer covers the active element and is exposed by the opening The portion of the _ rim layer is in direct contact with the viscous layer having a _ first contact window; the acne electrode is disposed on the protective layer and has a second contact window penetrating the bismuth electrode and the protective layer. Wherein the halogen electrode is transparent = 201237522 iiivviuiTW 36988twf.doc/ The first contact window of the IS Hai is electrically connected to the first drain block, and the second contact window exposes a portion of the second drain block; and a conductive layer is disposed in the second contact window, and The halogen electrode is electrically connected to the second drain block through the conductive layer. 8. The repaired halogen structure according to claim 7, wherein the conductive layer is made of tungsten. 9. The patchy structure of the substrate is as follows: The material of the conductive layer of the towel is substantially the same as the material of the second & pole block. 10) a method for fabricating a halogen structure, comprising: sequentially forming a gate, a margin layer, a semiconducting layer, and a genus layer on a substrate; forming a photoresist layer on the metal layer; The step material exposes the rail layer, and the gray scale mask has a light transmissive area, a rich reading rs. a first area M and a light shielding area, wherein the light transmission area is located at the δ 玄 半 半 半The door of the light-shielding area. The port and a blind hole. 'The portion of the metal layer with the patterned photoresist layer is the part of the metal layer and the exposed portion of the metal layer and the lower portion thereof corresponding to the blind hole The gold layer below, and the opening and the channel region are removed, and the rabbit layer of the edge layer is divided into a first bungee region 19 rw 36988twf.doc/I 201237522 ^ - the second bungee block and one a source block, wherein the source block and the second drain block are located on both sides of the channel region, and the source block is located between the first bungee block and the second secret block And the Heji block and the first bungee block are located on both sides of the opening; and removing the S-hai patterned photoresist layer; Forming a protective layer on the substrate, wherein the protective layer is in contact with the window and is covered by Wei Jin: the gate insulating layer is in direct contact; (5) u. The P-sub-electrode is formed on the protective layer by forming a halogen electrode, wherein the first contact window α is electrically connected to the first-pole block = through the pixel electrode and the protective layer: The second contact window exposes a portion of the second singular block to form a conductive layer in the second contact window, and the conductive layer is electrically connected to the second secret block. Prime electrode through 20