TW201236188A - The method of manufacturing crystalline silicon solar cell for avoiding undesirable metal deposition - Google Patents
The method of manufacturing crystalline silicon solar cell for avoiding undesirable metal deposition Download PDFInfo
- Publication number
- TW201236188A TW201236188A TW101103238A TW101103238A TW201236188A TW 201236188 A TW201236188 A TW 201236188A TW 101103238 A TW101103238 A TW 101103238A TW 101103238 A TW101103238 A TW 101103238A TW 201236188 A TW201236188 A TW 201236188A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- emitter
- substrate
- nitride layer
- solar cell
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 2
- 238000001465 metallisation Methods 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 239000002019 doping agent Substances 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 230000008021 deposition Effects 0.000 claims abstract description 10
- 238000007747 plating Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 30
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 20
- 229910052732 germanium Inorganic materials 0.000 claims description 14
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 claims description 9
- 238000000608 laser ablation Methods 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 238000009713 electroplating Methods 0.000 claims description 7
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 4
- 238000002309 gasification Methods 0.000 claims description 4
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims 1
- 238000005121 nitriding Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052710 silicon Inorganic materials 0.000 abstract 6
- 239000010703 silicon Substances 0.000 abstract 6
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 8
- 229910052707 ruthenium Inorganic materials 0.000 description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- -1 ruthenium nitride Chemical class 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
201236188 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種如申請專利範圍第1項所述用於處理 結晶性矽晶太陽能電池之製造方法以及一種使用該方法製造 之太陽能電池。 【先前技術】 國際專利公開號WO 2008/039067 A2中揭示了 一種方 法’即於氮化矽層沈積之前’將一矽基板之表面濕式化學氧化 為絕緣層。從而，可使具有網版印刷觸點之太陽能電池表面純 化之改良。 形成太陽能電池金屬觸點之另一可行方案為，在佈置於所 使用之矽基板表面上的絕緣層中形成局部開口部。接著，藉由 鍍層使金屬沈積於該等開口部中》然已被揭露，關於鍍層，不 管是經由電鍍或化學鍍層，金屬亦會部分地沈積於絕緣層之未 開口部區域上，例如沈積於氮化矽層之未開口部區域上。這樣 的不當金屬沈積通常被成為「鬼沈積」（Geisterabscheidungen) 或「鬼鍍層」（ghostplating)。其將導致額外的遮蔽損耗以及影 響太陽能電池之功效，因此為不期望出現之不當沈積。 【發明内容】 因此’本發明之目的在於’提供一種既避免形成鬼沈積， 亦不影響成品太陽能電池之功效的方法。 201236188 該目的藉由一種具有如申請專利範圍第1項之技術特徵 的方法而達成。 本發明之目的亦在於，提供一種觸點藉由鐘層而形成且無 鬼沈積的太陽能電池。 該目的藉由一種具有如申請專利範圍第12項之技術特徵 的太陽能電池而達成。 有利之改進方案由附屬項提出。 如本發明之方法係採取如下設計，為了於一矽基板之一第 一面上形成一射極，將摻雜物擴散至矽基板中，接著至少於矽 基板之第一面上沈積一氣化梦層’接著於碎基板之第一面上， 在氮化矽層上局部形成開口部，接著於該等開口部中藉由鍍層 形成金屬觸點。於氮化矽層沈積之前，部分地於矽基板之第一 面上回蝕刻射極。接下來，亦於氮化矽層沈積於矽基板之第一 面上之前，形成一厚度為1.0 nm至10 nm的二氧化碎層》 結果表明，藉由該方式可避免鬼沈積，從而可降低太陽能 電池之遮蔽損耗。 上文所述之射極之設計方式並非必須僅限制於矽基板之 第一面上’亦可實施於矽基板之其餘面上。氮化矽層沈積、二 氧化矽層之形成以及射極之回蝕刻亦並非必須僅限制於矽基 板之第一面上。 链層在此應理解為電鍍（其亦被稱為電鍍金屬沈積或電鍍 層）或無電流鍍層（其亦被稱為化學金屬沈積或無電鍍層）。 金屬觸點在此應為由一或多種金屬或一或多種金屬合金組成 的觸點》 201236188 較佳地，藉由雷射剝蝕於氮化矽層中形成開口部。較佳之 方式為’於梦基板之第一面上沈積一含氫之氣化發層。由此， 可於太陽能電池製造過程中將氫自氮化矽層中擴散至矽基板 中以鈍化缺陷。此方式對於多晶矽基板時尤為較佳。由於二氧 化矽層形成於氮化矽層沈積之前，且其層厚度薄，所以二氧化 矽層不會顯著阻礙氫自氮化矽層中擴散至矽基板中。 較佳地’藉由電鍍於開口部中之形成金屬觸點。本實施變 異之方式於本發明中尤為較佳，原因在於，相對於化學链層， 使用電鍍時會造成更大範圍之鬼沈積。 濕式化學回蚀刻射極為較佳之做法β較佳地，使用含有氫 氟酸及硝酸或氫氟酸及臭氧之蚀刻劑進行回姓刻。 本發明之方法的一較佳實施例中，藉由對射極之回蝕刻將 射極之層電阻值提高ΙΟΩ/sq至50Q/sq。若使用多晶發基板， 回蚀刻射極之後實際可將其層電阻值之上限值維持為 90Q/sq。若為單晶矽基板，則該電阻上限值將更高。 較佳地’藉由滿式化學氧化來形成二氧化梦層。濕式化學 氧化可例如於一含臭氧、過氧化氫或硝酸之溶劑中實行。尤其 較佳地，於由去離子水及溶解於其中之臭氧組成之氧化劑中形 成二氧化矽層。 另一實施例中，藉由一氣相氧化作用來形成二氧化矽層。 較佳地，於含臭氧之氣體環境中實行氣相氧化作用。較佳形式 為，使用能量激發實行氧化，例如藉由電磁輻射進行照射較 佳地，可使用紫外線。 2 至 3 nm 結果表明’實際上可將二氧化發層之層厚維持於 6 201236188 之間。 較佳地，於形成於氮化矽層中之開口部中局部去除二氡化 發層。此處亦須藉由雷射剝银而實現，尤其較佳地，並於同樣 地雷射剝姓步驟中，於氮化矽層中形成開口部。 如本發明之方法的一改良方式，藉由雷射剝蝕於氮化矽層 中形成開口部，藉由雷射擴散於開口部區域中形成重摻雜之射 極區域。此處雷射擴散應理解為，矽基板藉由雷射剝蝕所發射 之雷射輻射局部被加熱，從而使摻雜物重置於該等開口部區域 中，局部改變射極之輪廓。發生上述摻雜物之重置時，亦會下 降對電非活性摻雜物之活性作用。藉由此種雷射擴散可於開口 部區域中形成局部重摻雜之射極區域，從而形成所謂選擇性射 極0 實際使用雷射剝蝕時，可使用均質射極、選擇性射極以及 雷射誘發之方法’其有時候被稱為雷射化學處理；舉例而言， 亦可使用雷射誘發之化學蚀刻，其有時候被稱為雷射化學姓 刻。作為備用方案’雷射剝蚀亦可藉由脈衝雷射沉積而實現， 其與雷射誘發化學方法相同，可為了形成一選擇性射極而進行 化學擴散》 若要以所述方式形成一選擇性射極，則可於發基板之第一 面上進行更強之擴散以形成射極。該做法一方面有益於方法之 實施，另一方面可以在摻雜物更強之擴散時更佳地吸收存在於 矽基板中的雜質，從而有利於提高成品太陽能電池之功效。 為了完整起見應說明’若使用選擇性射極，則其位於重捧 雜之射極區域附近之射極層電阻上限值可以超過上文所述之 201236188 較佳射極層電阻上限值。 【實施方式】 囷1展示了如本發明之方法的一實施例。由圓所示，首先， 摻雜物擴散10至一矽基板50中，從而形成一射極52。本實施例 中，摻雜物僅向太陽能電池基板5〇之頂面擴散。可用一習知方 式，例如，可以將含有摻雜物之溶劑塗佈至矽基板5〇上經由 此溶劑實行擴散。所使用之摻雜物匹配於矽基板5〇之摻雜量。 原則上，既可使用η-摻雜射極，亦可使用p_摻雜射極。此外， 摻雜物亦可不僅向矽基板之頂面擴散，而是向矽基板之全部表 面擴散。在此情況下，為了防止射極52與稍後形成之背面觸點 62之間發生短路，須採取適當措施。 本方法下一步驟中，部分回蝕刻12射極52β本實施例中， 含有氩氟酸及硝酸之溶劑中以濕化學方式實施回蝕刻。 接著，為了形成14一二氧化矽層54,將矽基板50浸入含有 臭氧之去電離水中。以此方式對矽基板50之全部表面進行濕化 學氧化。 下一步’將一含氫之氮化矽層沈積16。此步驟通常採用蒸 汽相化學沈積法（CVD)。第1圓所示之囫形指向下方之發基 板50底面不塗佈氮化梦層56。其實現方式可例如為，將發基板 成對地背靠背置入所使用之塗層設備中’或者將矽基板之底面 置於一驶入所使用之塗層設備的引導裝置上，使其進入塗層設 備。 本方法下一步驟中，於矽基板50之第一面（本實施例中為 梦基板50之頂面）於氮化矽層56上形成18局部開口部58。在本 8 201236188 實施例中’藉由雷射剝蝕以實施。因此，本實施例中於開口部 58中局部去除了二氧化矽層54。 接下來於開口部58中藉由電鍍20形成正面觸點60。此處涉 及例如含有鎳及銀或鎳、銅及銀的金屬觸點。電鍍2〇之作用範 圍亦包括於矽基板50之背面形成背面觸點62。因此，其材質與 正面觸點60相同。 圖1中為了更為清楚地展示，省略了用於形成背面區域 (即：back surface fields )之各已知方法步驟》因此，各已知 方法步驟亦可同樣應用於其上。 圈1中最下方之部分視圖除最終步驟電鍍20以外，亦顯示 了如本發明之太陽能電池之另一實施例。 圓2之實施例與囷1之區別在於，於氮化矽層56中局部形成 28開口部58時，也實施一雷射擴散28。從而於開口部58區域中 形成重摻雜之射極區域64,其於射極52之其餘區域共同組成一 選擇性射極。與圓1所示實施例相同，可以藉由雷射誘發之化 學姓刻來實現雷射剝蚀以及雷射擴散。亦可使用雷射輻射氣化 方法來替代雷射誘發之化學蝕刻。 圖2中最下方之部分視圖除最终步驟電鍍2〇以外，亦顯示 了如本發明之太陽能電池之另一實施例。 【圈式簡單說明】 圊1為如本發明之方法的一第一實施例之視圖； 圊2為如本發明之方法的一第二實施例之視圖。 【主要元件符號說明】 9 201236188 ίο摻雜物擴散 12回蝕刻射極 14形成二氧化矽層 16氮化矽層沈積 18形成開口部 20電鍍 28形成開口部及雷射擴散 50矽基板 52射極 54二氧化矽層 56氮化矽層 58開口部 60正面觸點 62背面觸點 64重摻雜之射極區域 10201236188 VI. Description of the Invention: [Technical Field] The present invention relates to a method for producing a crystalline twin solar cell as described in claim 1 and a solar cell manufactured using the method. [Prior Art] International Patent Publication No. WO 2008/039067 A2 discloses a method of wet chemically oxidizing the surface of a substrate to an insulating layer prior to deposition of a tantalum nitride layer. Thereby, the surface of the solar cell having the screen printing contact can be purified. Another possibility for forming a solar cell metal contact is to form a partial opening in the insulating layer disposed on the surface of the substrate used. Then, by depositing metal in the openings by plating, it has been revealed that with regard to the plating, whether by electroplating or electroless plating, the metal is partially deposited on the unopened region of the insulating layer, for example, deposited on On the unopened region of the tantalum nitride layer. Such improper metal deposition is often referred to as "geisterabscheidungen" or "ghostplating". It will result in additional shadowing losses and affect the efficacy of the solar cell, and thus is an undesirable deposition that is undesirable. SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide a method that avoids the formation of ghost deposits or the efficacy of the finished solar cell. 201236188 This object is achieved by a method having the technical features of item 1 of the scope of the patent application. It is also an object of the present invention to provide a solar cell in which contacts are formed by a clock layer and which are free from ghost deposition. This object is achieved by a solar cell having the technical features of claim 12 of the patent application. An advantageous improvement is proposed by the subsidiary. The method of the present invention adopts a design in which a dopant is diffused into the ruthenium substrate on the first surface of one of the ruthenium substrates, and then a gasification dream is deposited on at least the first surface of the ruthenium substrate. The layer 'follows the first side of the broken substrate, partially forming an opening on the tantalum nitride layer, and then forming a metal contact by plating in the openings. The emitter is etched back partially on the first side of the germanium substrate prior to deposition of the tantalum nitride layer. Next, a layer of oxidized metal having a thickness of 1.0 nm to 10 nm is formed before the tantalum nitride layer is deposited on the first surface of the tantalum substrate. The results show that ghost deposition can be avoided by this method, thereby reducing Shadow loss of solar cells. The design of the emitter described above does not have to be limited to only the first side of the substrate. It can also be implemented on the remaining side of the substrate. The deposition of tantalum nitride layer, the formation of a hafnium oxide layer, and the etch back of the emitter are also not necessarily limited to the first side of the tantalum substrate. Chain layer is here understood to mean electroplating (which is also referred to as electroplated metal deposition or electroplating) or electroless plating (which is also referred to as chemical metal deposition or electroless plating). The metal contact here should be a contact consisting of one or more metals or one or more metal alloys. 201236188 Preferably, the opening is formed in the tantalum nitride layer by laser ablation. Preferably, a hydrogen-containing gasification layer is deposited on the first side of the dream substrate. Thereby, hydrogen can be diffused from the tantalum nitride layer into the germanium substrate during the solar cell manufacturing process to passivate the defects. This method is especially preferred for polycrystalline germanium substrates. Since the ruthenium dioxide layer is formed before the ruthenium nitride layer is deposited and its layer thickness is thin, the ruthenium dioxide layer does not significantly impede the diffusion of hydrogen from the tantalum nitride layer into the ruthenium substrate. Preferably, the metal contacts are formed by electroplating in the openings. A variation of this embodiment is particularly preferred in the present invention because a greater range of ghost deposits is created when electroplating is used relative to the chemical chain layer. The wet chemical etch back is highly preferred. Preferably, the etchant containing hydrofluoric acid and nitric acid or hydrofluoric acid and ozone is used for the etchback. In a preferred embodiment of the method of the present invention, the layer resistance of the emitter is increased by ΙΟ Ω / sq to 50 Q / sq by etch back the emitter. If a polycrystalline substrate is used, the upper limit of the layer resistance value can be maintained at 90 Q/sq after etch back the emitter. In the case of a single crystal germanium substrate, the upper limit of the resistance will be higher. Preferably, the dioxide dioxide layer is formed by full chemical oxidation. Wet chemical oxidation can be carried out, for example, in a solvent containing ozone, hydrogen peroxide or nitric acid. Particularly preferably, the cerium oxide layer is formed in an oxidizing agent composed of deionized water and ozone dissolved therein. In another embodiment, the ruthenium dioxide layer is formed by a gas phase oxidation. Preferably, gas phase oxidation is carried out in an atmosphere containing ozone. Preferably, the oxidation is carried out using energy excitation, and for example, irradiation by electromagnetic radiation is preferably carried out. The 2 to 3 nm results indicate that the layer thickness of the oxidized layer can be maintained between 6 201236188. Preferably, the dichroic layer is partially removed in the opening formed in the tantalum nitride layer. Here, it is also necessary to perform silver stripping by laser, and particularly preferably, in the same laser stripping step, an opening is formed in the tantalum nitride layer. According to a modification of the method of the present invention, an opening is formed in the tantalum nitride layer by laser ablation, and a heavily doped emitter region is formed by diffusion of the laser in the opening region. Here, laser diffusion is understood to mean that the laser radiation emitted by the germanium substrate by laser ablation is locally heated, thereby resetting the dopant in the opening regions and locally changing the contour of the emitter. When the reset of the above dopant occurs, the activity of the electrically inactive dopant is also lowered. By such laser diffusion, a locally heavily doped emitter region can be formed in the opening region, thereby forming a so-called selective emitter 0. When laser ablation is actually used, a homogeneous emitter, a selective emitter, and a thunder can be used. The method of shot-induced is sometimes referred to as laser chemistry; for example, laser-induced chemical etching, which is sometimes referred to as laser chemistry, can also be used. As an alternative, 'laser ablation can also be achieved by pulsed laser deposition, which is the same as laser-induced chemistry, and can be chemically diffused to form a selective emitter." The emitter can be more diffused on the first side of the substrate to form an emitter. This method is beneficial to the implementation of the method on the one hand, and better absorbs the impurities present in the germanium substrate when the dopant is more diffused, thereby contributing to the improvement of the efficacy of the finished solar cell. For the sake of completeness, it should be stated that 'if a selective emitter is used, the upper limit of the emitter resistance near the raised emitter region may exceed the above-mentioned 201236188 preferred emitter resistance upper limit. . [Embodiment] 囷 1 shows an embodiment of the method of the present invention. As indicated by the circle, first, the dopant diffuses 10 into a substrate 50 to form an emitter 52. In this embodiment, the dopant diffuses only to the top surface of the solar cell substrate 5 . A conventional method can be used, for example, a solvent containing a dopant can be applied to the crucible substrate 5 to be diffused via the solvent. The dopant used is matched to the doping amount of the germanium substrate 5〇. In principle, either an η-doped emitter or a p_doped emitter can be used. Further, the dopant may diffuse not only to the top surface of the germanium substrate but to all surfaces of the germanium substrate. In this case, in order to prevent a short circuit between the emitter 52 and the back contact 62 formed later, appropriate measures must be taken. In the next step of the method, a portion of the etch back 12 emitter 52β is etched back in a wet chemical manner in the solvent containing argon fluoride acid and nitric acid. Next, in order to form the 14-ceria layer 54, the tantalum substrate 50 is immersed in deionized water containing ozone. In this way, the entire surface of the ruthenium substrate 50 is subjected to wet chemical oxidation. Next, a layer of hydrogen-containing tantalum nitride is deposited 16. This step is usually carried out by vapor phase chemical deposition (CVD). The bottom surface of the hair substrate 50, which is indicated by the first circle, is not coated with the nitride layer 56. This can be achieved, for example, by placing the hair substrate back into the coating device in pairs or by placing the bottom surface of the substrate on a guiding device of the coating device used for driving into the coating device. Layer device. In the next step of the method, a partial opening portion 58 is formed on the first layer of the germanium substrate 50 (the top surface of the dream substrate 50 in this embodiment) on the tantalum nitride layer 56. In the present embodiment, the 2012 20128188 embodiment is carried out by laser ablation. Therefore, in the present embodiment, the ceria layer 54 is partially removed in the opening portion 58. Next, the front contact 60 is formed by the plating 20 in the opening portion 58. Metal contacts such as nickel and silver or nickel, copper and silver are referred to herein. The function of electroplating also includes forming a back contact 62 on the back side of the germanium substrate 50. Therefore, the material is the same as that of the front contact 60. In order to show more clearly in Fig. 1, the various known method steps for forming the back surface fields are omitted. Thus, the known method steps can equally be applied to them. The lowermost partial view of the circle 1 shows, in addition to the final step plating 20, another embodiment of the solar cell of the present invention. The embodiment of the circle 2 differs from the crucible 1 in that a laser diffusion 28 is also applied when the opening portion 58 is partially formed in the tantalum nitride layer 56. Thus, heavily doped emitter regions 64 are formed in the region of the opening 58 which together form a selective emitter in the remaining regions of the emitter 52. As in the embodiment shown in the circle 1, laser ablation and laser diffusion can be achieved by laser-induced chemical surnames. Laser radiation gasification can also be used instead of laser induced chemical etching. The lowermost partial view of Fig. 2 shows another embodiment of the solar cell according to the present invention in addition to the final step of plating. BRIEF DESCRIPTION OF THE DRAWINGS A 圊 1 is a view of a first embodiment of the method of the present invention; 圊 2 is a view of a second embodiment of the method of the present invention. [Main component symbol description] 9 201236188 ί Doping diffusion 12 etching etched emitter 14 forming ruthenium dioxide layer 16 矽 矽 layer deposition 18 forming opening portion 20 plating 28 forming opening portion and laser diffusion 50 矽 substrate 52 emitter 54 yttrium oxide layer 56 tantalum nitride layer 58 opening portion 60 front contact 62 back contact 64 heavily doped emitter region 10
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| NL2000248C2 (en) | 2006-09-25 | 2008-03-26 | Ecn Energieonderzoek Ct Nederl | Process for the production of crystalline silicon solar cells with improved surface passivation. |
| JP5216633B2 (en) * | 2008-03-19 | 2013-06-19 | ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． | Method for suppressing background plating |
| DE102008028578A1 (en) * | 2008-06-16 | 2010-03-04 | Institut Für Solarenergieforschung Gmbh | Passivated p-type silicon solar cell and method of making the same |
| EP2157209B1 (en) * | 2008-07-31 | 2014-10-22 | Rohm and Haas Electronic Materials LLC | Inhibiting Background Plating |
| DE102008063558A1 (en) * | 2008-12-08 | 2010-06-10 | Gebr. Schmid Gmbh & Co. | Method for processing the surface of a wafer for producing a solar cell and wafer |
| US20100186808A1 (en) * | 2009-01-27 | 2010-07-29 | Peter Borden | Plating through tunnel dielectrics for solar cell contact formation |
| CN102804392A (en) * | 2009-06-22 | 2012-11-28 | 国际商业机器公司 | Semiconductor optical detector structure |
| WO2011050399A1 (en) * | 2009-10-26 | 2011-05-05 | Newsouth Innovations Pty Limited | Improved metallization method for silicon solar cells |
-
2011
- 2011-02-03 DE DE201110010306 patent/DE102011010306A1/en not_active Withdrawn
-
2012
- 2012-02-01 TW TW101103238A patent/TW201236188A/en unknown
- 2012-02-03 WO PCT/DE2012/100024 patent/WO2012103888A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| DE102011010306A1 (en) | 2012-08-09 |
| WO2012103888A1 (en) | 2012-08-09 |
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