201236095 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明係有關於切割晶圓的加工方法，尤其是有關 於一種晶圓破片邊緣的搜尋方法。 【先前技#Ϊ】 [0002] 請參閱「圖1」與「圖2」所示，晶圓劈裂機用於將 晶圓1劈裂為一粒粒的晶粒，以進行後續的封裝作業，晶 圓1在進行劈裂之前，會先用雷射切割出橫向與縱向的雷 射切割線2，晶圓1上的雷射切割線2並未斷裂，其約略保 留三分之二的厚度相連，接著將晶圓1貼附一藍膜3(或白 膜），再於晶圓1上方覆蓋一保護膜（圖未示）加以保護後 ，藉一固定夾具4送入一晶圓劈裂機進行劈裂作業。 [0003] 晶圓劈裂機包含一工作台5、一劈刀6、二劈裂台7與 一影像擷取系統8，該工作台5夾置該固定夾具4，並可作 平面方向的移動與轉動，該劈刀6與該二劈裂台7係分設 於該晶圓1的上下兩側，以讓該晶圓1抵壓該二劈裂台7， 並藉擊錘（圖未示）敲擊該劈刀6所產生的衝擊力進行劈裂 作業，該影像擷取系統8則用於截取該晶圓1的影像。 [0004] 據而該晶圓1可藉該劈刀6的衝擊力與該工作台5的定 量位移，對多個雷射切割線2連續進行劈裂，而該影像擷 取系統8則在連續劈裂過程中監控該晶圓1的定位是否偏 移，以視偏移的程度重新進行定位，而當橫向與縱向的 雷射切割線2皆被劈裂之後即完成劈裂作業。 [0005] 請再參閱「圖3」所示，晶圓9在製造的過程中，有 可能因為外力的撞擊、製程的不良而造成晶圓9局部破裂 100105729 表單編號 A0101 第 3 頁/共 19 頁 1002009828-0 201236095 ，因此對於有損壞的晶圓9，在進行劈裂作業之前，必須 先確定晶圓9的破裂邊緣10。 [0006] [0007] [0008] [0009] [0010] [0011] 習知晶圓9的破裂邊緣10的測定方法，主要是利用全 景影像擷取元件來擷取影像，並利用影像處理方法針對 明暗對比度來判斷晶圓9的破裂邊緣10。此種方法需要成 本昂貴的全景影像擷取元件，且所需處理的影像資料龐 大，難以快速的判定破裂邊緣1 0的所在位置，且在破裂 邊緣10確定之後，使用者在進行劈裂作業之前，必須自 行換算所需的劈裂刀數，其不但費時且容易產生錯誤， 而造成劈裂刀數過多或不足，而造成劈刀不必要的磨損 或是將好的視為損壞而造成製程良率低落。 【發明内容】 爰此，本發明之主要目的在於提供一種晶圓破片邊 緣的米字搜尋方法，其成本低廉且精準，且可方便使用 者進行劈裂作業，並提升良率，滿足使用上的需求。 本發明為一種晶圓破片邊緣的米字搜尋方法，用於 搜尋一晶圓的破裂邊緣，該晶圓具有複數垂直相交的第 一雷射切割線與第二雷射切割線，該第一雷射切割線與 該第二雷射切割線於該晶圓上區隔出複數晶粒，其包含 步驟A :選擇平行該第一雷射切割線與該第二雷射切 割線的任一的移動方向為一搜尋方向； 步驟B :選擇該複數晶粒的其中一個； 步驟C :擷取單一晶粒影像； 100105729 表單編號A0101 第4頁/共19頁 1002009828-0 201236095 [_ :判定該晶粒的影像是否為完整晶粒； [] #驟1若該晶粒的影像為完整晶粒，則沿該搜尋方 向移動，選擇下一位置的該晶粒並回到重新進行步驟c; 闺 ㈣F:若晶粒的影像«完整晶粒，縣束並標定 此處位置。 [0015] ❹ 據此’本發明可精準的標定出位於該晶®最邊緣的 70玉日日粒，藉由統計沿該搜尋方向移動的次數，即可得 知需要劈㈣77數。因此可讓使用者預先得知需要劈裂 的數量’以方便使用者的劈裂作業進行，又操取晶粒影 像可使用習知劈韻㈣像齡m此可節省設備 成本，滿足降低成本的需求。 【實施方式】 [0016] 為俾使貴委員對本發明之特徵、目的及功效，有著 更加深入之瞭解與認同，茲列舉較佳實施例並配合圖式 說明如后： Q [⑻17] 請參閱「圖4 J與「圖5」所示，本發明為一種晶圓 破片邊緣的米字搜尋方法，用於搜尋一晶圓20的破裂邊 緣21 ’ β玄bb圓20具有複數垂直相交的第一雷射切割線31 與第二雷射切割線32，該第一雷射切割線31與該第二雷 射切割線32區於該晶圓20上隔出複數晶粒4〇，其包含步 驟八~步驟F ’並說明如下： [0018] 步驟Α為選擇搜尋方向，其可以選擇平行該第一雷射 切割線31或該第二雷射切割線32的移動方向作為搜尋方 向0 1002009828-0 100105729 表單編號A0101 第5頁/共19頁 201236095 [0019] 步驟B為選擇晶粒40，其為選擇該複數晶粒40的其 中一個，且較佳的作法為，步驟B優先選擇的該晶粒40為 靠近該晶圓20的邊緣處’而該搜哥方向為朝向該晶圓20 的中心，以由該晶圓20的邊緣朝該晶圓20中心搜尋直至 該晶圓20另一侧的邊緣。 [0020] 步驟C為擷取晶粒40影像，其擷取單一晶粒40影像 ，且其設備可以使用劈裂機本身用於定位的影像擷取系 統，以降低設置成本。 [0021] 步驟D為影像比對判斷，其判定該晶粒40的影像是否 為完整晶粒，由於本發明擷取單一晶粒40的影像，其形 狀固定簡單，因此只要經由簡單運算處理，即可確認該 晶粒40的影像是否為完整晶粒。 [0022] 步驟E為下一位置取像，若該晶粒40的影像為完整晶 粒，則繼續沿該搜尋方向移動，並選擇下一位置的該晶 粒40並回到重新進行步驟C，對下一位置的晶粒40擷取影 像。 [0023] 步驟F為標定位置，若晶粒40的影像非為完整晶粒， 則代表此處為晶圓20的邊緣或是破裂邊緣21，因此即可 結束搜尋並標定此處位置。而統計使用者沿該搜尋方向 移動位移次數，即可得知總共有幾個完整晶粒並排，亦 即其需要劈裂的次數可快速地得知，舉例來說若有五個 完整晶粒並排，則其需要劈裂六次。 [0024] 請再參閱「圖6」所示，由於晶圓20的破裂邊緣21 很少沿著該第一雷射切割線31與該第二雷射切割線32的 100105729 表單編號A0101 第6頁/共19頁 1002009828-0 201236095 [0025] Ο [0026] ❸ [0027] 方向破裂，因此本發明於進行步驟!?時，若該晶粒4〇的影 像非為完整晶粒時，可先進行步驟G進行米字位移，首先 步驟G可垂直該搜尋方向左移，以選擇左側的該晶粒4〇並 回到重新進行步驟C，其目的在於確認左側的晶粒4〇是否 為完整晶粒，若是完整晶粒，則代表需要繼續搜尋下去 ，若當連續兩次該晶粒40的影像非為完整晶粒時，才能 結束並標定此處位置。 或者可接續前段的流程，若連續兩次該晶粒4〇的影 像非為完整晶粒時’步驟6的_米字位移可垂直該搜尋方向 右移’選擇右側的該晶粒4 0並回刹重新進行步驟c，其目 的在於破認右側的晶粒40是否真的非為完整晶粒，若當 連縯三次該晶粒4 0的影像非為完整晶粒時，即可結束並 標定此處位置。 又為了慎重起見，可接續前段的流程，本發明可在 連續三次該晶粒40的影像非為完整晶粒時，步驟g的米字 位移可先沿該搜尋方向朝上右45度位移，選擇對角的該 晶粒40並回到重新進行步驟C，其目的在於確認上右45度 的晶粒40是否為完整晶粒，若為完整晶粒則需要繼續搜 尋下去’若當連續四次該晶粒40的影像非為完整晶粒時 ’則可結束並標定此處位置。 同樣的可接續前段的流程’若連續四次該晶粒40的 影像非為完整晶粒時，則步驟G的米字位移可以對角的該 晶粒40為基準點，垂直該搜尋方向右移，選擇右側的該 晶粒4 0並回到重新進行步驟C，若當連續五次該晶粒4 0的 影像非為完整晶粒時，則結束並標定此處位置。 100105729 表單編號Α0101 第7頁/共19頁 1002009828-0 201236095 [0028] 接續前段的流程’若連續五次該晶粒4 0的影像非為 完整晶粒時，則步驟G的米字位移可以對角的該晶粒40為 基準點，垂直該搜尋方向左移，選擇左側的該晶粒4 〇並 回到重新進行步驟C，若當連續六次該晶粒4 0的影像非為 完整晶粒時，則結束並標定此處位置。 [0029] 此外若連續六次該晶粒40的影像非為完整晶粒時， 亦可先回到連續六次取像的第一次取像位置，並步驟G的 米字位移為沿該搜尋方向朝上左45度位移，選擇對角的 該晶粒40並回到重新進行步驟C，若當連續七次該晶粒4〇 的影像非為完整晶粒時，則結束並標定此處位置。 [〇〇3〇] 或者連續七次該晶粒40的影像非為完整晶粒時，步 驟G的米字位移可以對角的該晶粒4〇為基準點，垂直該搜 哥方向左移，選擇左侧的該晶粒4 〇並回到童新進行步驟匸 ’若當連續八次該晶粒40的影像非為完整晶粒時，再結 束並標定此處位置。 [0031] 或者連續八次該晶粒4 0的影像非為完整晶粒時，步 驟G的米字位移可以對角的該晶粒4〇為基準點，垂直該搜 寻方向右移’選擇右侧的該晶粒4〇並回到重新進行步驟匸 ’且當連續九次該晶粒40的影像非為完整晶粒時，則結 束並標定此處位置。 [0032] 如上所述，本發明透過擷取單一晶粒40影像來做比 對’若判斷為完整晶粒，則沿該搜尋方向移動，位移下 一位置取像，若判斷為非完整晶粒，則結束並標定此處 位置，或者可以米字位移的方式選擇鄰近的晶粒40來加 100105729 表單編號A0101 第8頁/共19頁 1002009828-0 201236095 以判斷是否為完整晶粒，在此需特別說明的是米字位移 方向的次序，並沒有一定的準則，如上所述只是本發明 提出一個可行的次序，並非為唯一的次序。 [0033] 據此，本發明可精準的標定出位於該晶圓20最邊緣 的完整晶粒，並藉由統計沿該搜尋方向移動的次數，而 得知需要劈裂的刀數。其可讓使用者得知需要劈裂的次 數，以方便使用者的劈裂作業進行，又其不須另外加裝 全景影像擷取系統，因此成本低廉可滿足使用上的需求 ❹ 。 [0034] 綜上所述僅為本發明的較佳實施例而已，並非用來 限定本發明之實施範圍，即凡依本發明申請專利範圍之 内容所為的等效變化與修飾，皆應為本發明之技術範疇 〇 【圖式簡單說明】 [0035] 圖1，係習知晶圓劈裂裝置之局部結構示意圖。 [0036] 圖2，係習知待劈裂晶圓之結構示意圖。 〇 [0037] 圖3，係習知晶圓破片之結構示意圖。 [0038] 圖4，係本發明流程步驟示意圖。 [0039] 圖5，係本發明晶圓破片之結構示意圖。 [0040] 圖6，係本發明另一流程步驟示意圖。 【主要元件符號說明】 [0041] 習知 [0042] 1、9 :晶圓 100105729 表單編號A0101 第9頁/共19頁 1002009828-0 201236095 [0043] 2 ： 雷射切割線 [0044] 3 ： 藍膜 [0045] 4 ： 固定爽具 [0046] 5 ： 工作台 [0047] 6 : 劈刀 [0048] 7 ： 劈裂台 [0049] 8 ： 影像擷取系統 [0050] 10 :破裂邊緣 [0051] 本發明 [0052] G :步驟 [0053] 20 •晶圓 [0054] 21 :破裂邊緣 [0055] 31 :第一雷射切割線 [0056] 32 :第二雷射切割線 [0057] 40 •晶粒 100105729 表單編號A0101 第10頁/共19頁 1002009828-0201236095 VI. Description of the Invention: [Technical Field of the Invention] [0001] The present invention relates to a method of processing a wafer, and more particularly to a method of searching for a wafer fragment edge. [Previous Technology #Ϊ] [0002] Please refer to Figure 1 and Figure 2, the wafer splitting machine is used to split the wafer 1 into a grain of grain for subsequent packaging operations. Before the wafer 1 is cleaved, the horizontal and vertical laser cutting lines 2 are first cut by laser, and the laser cutting line 2 on the wafer 1 is not broken, and approximately two-thirds of the thickness is retained. Connected, then attach a blue film 3 (or white film) to the wafer 1, and then cover the wafer 1 with a protective film (not shown) for protection, and then send a wafer to the wafer by a fixing fixture 4. The machine performs a splitting operation. [0003] The wafer splitting machine comprises a work table 5, a file 6, a splitting table 7 and an image capturing system 8, the table 5 is sandwiched between the fixing fixtures 4 and can be moved in a plane direction. And rotating, the boring tool 6 and the two cleavage table 7 are respectively disposed on the upper and lower sides of the wafer 1 to allow the wafer 1 to press against the two cleavage table 7, and by means of a hammer (not shown) The impact force generated by the trowel 6 is tapped to perform the splitting operation, and the image capturing system 8 is used to intercept the image of the wafer 1. [0004] According to the wafer 1 , the plurality of laser cutting lines 2 can be chopped continuously by the impact force of the boring tool 6 and the quantitative displacement of the table 5, and the image capturing system 8 is continuous. During the cleaving process, it is monitored whether the positioning of the wafer 1 is offset, and the positioning is re-positioned according to the degree of the offset, and the splitting operation is completed when both the horizontal and vertical laser cutting lines 2 are cleaved. [0005] Please refer to FIG. 3 again, during the manufacturing process of the wafer 9, the wafer 9 may be partially broken due to the impact of external force and poor process. 100105729 Form No. A0101 Page 3 of 19 1002009828-0 201236095, therefore for a damaged wafer 9, the fracture edge 10 of the wafer 9 must be determined prior to the splitting operation. [0010] [0010] [0011] The method for measuring the cracked edge 10 of the conventional wafer 9 is mainly to use a panoramic image capturing component to capture images, and to use image processing methods for light and dark contrast The fracture edge 10 of the wafer 9 is judged. This method requires expensive panoramic image capture components, and the image data to be processed is large, and it is difficult to quickly determine the location of the fracture edge 10, and after the fracture edge 10 is determined, the user performs the splitting operation. It is necessary to convert the required number of splitting knives by itself. It is not only time-consuming and prone to errors, but also causes too many or insufficient cleavage knives, which causes unnecessary wear of the boring tool or treats good as damage and causes good process. The rate is low. SUMMARY OF THE INVENTION Accordingly, the main object of the present invention is to provide a method for searching a rice word on the edge of a wafer fragment, which is low in cost and accurate, and is convenient for the user to perform a splitting operation and improve the yield and satisfy the use. demand. The invention relates to a rice word searching method for a wafer fragment edge, which is used for searching a cracked edge of a wafer, the wafer having a plurality of vertically intersecting first laser cutting lines and a second laser cutting line, the first mine The shot cutting line and the second laser cutting line are separated from the plurality of crystal grains on the wafer, and the method includes the step A: selecting parallel movement of any of the first laser cutting line and the second laser cutting line The direction is a search direction; Step B: select one of the plurality of crystal grains; Step C: capture a single grain image; 100105729 Form No. A0101 Page 4 / Total 19 pages 1002009828-0 201236095 [_: Determine the die Whether the image is a complete grain; [] #j1 If the image of the die is a complete grain, move along the search direction, select the die at the next position and return to step c again; 闺(4)F: If the image of the grain «complete grain, the county beam and calibrate the position here. [0015] According to the present invention, the 70 jade granules located at the outermost edge of the crystal® can be accurately calibrated, and by counting the number of movements in the search direction, it is known that the number of 四(4) 77 is required. Therefore, the user can know in advance the number of cracks required to facilitate the user's splitting operation, and the operation of the grain image can be performed using the conventional rhyme (4) image age m, which can save equipment costs and meet the cost reduction. demand. [Embodiment] [0016] In order to give your members a deeper understanding and recognition of the features, objects and effects of the present invention, the preferred embodiments are illustrated with the following description: Q [(8)17] See " 4 and FIG. 5, the present invention is a m-character search method for searching for the edge of a wafer to search for a cracked edge of a wafer 20. The β Xuanb circle 20 has a plurality of vertical intersecting first rays. The cutting line 31 and the second laser cutting line 32, the first laser cutting line 31 and the second laser cutting line 32 are separated from the plurality of crystal grains 4 on the wafer 20, and the step 8 is included. Step F' is explained as follows: [0018] Step Α is to select a search direction, which may select a parallel direction of the first laser cutting line 31 or the second laser cutting line 32 as a search direction 0 1002009828-0 100105729 form No. A0101, page 5 of 19, 201236095 [0019] Step B is to select the die 40, which is one of the plurality of die 40, and preferably, the die 40 is preferentially selected in step B. Near the edge of the wafer 20' and the search direction is To the center of the wafer 20 to search from the edge of the wafer 20 toward the center of the wafer 20 until the edge 20 of the other side of the wafer. [0020] Step C is to capture the image of the die 40, which captures a single die 40 image, and the device can use the image capture system used by the splitting machine itself for positioning to reduce the installation cost. [0021] Step D is an image comparison determination, which determines whether the image of the die 40 is a complete die. Since the image of the single die 40 is captured by the present invention, the shape is fixed simply, so that it is processed by simple operation, that is, It can be confirmed whether the image of the crystal grain 40 is a complete crystal grain. [0022] Step E is to take the image at the next position. If the image of the die 40 is a complete die, continue to move along the search direction, and select the die 40 in the next position and return to step C again. The image is taken from the die 40 at the next position. [0023] Step F is the calibration position. If the image of the die 40 is not a complete grain, it represents the edge of the wafer 20 or the rupture edge 21, so that the search can be ended and the position can be calibrated. The statistical user moves the number of displacements along the search direction, and it can be known that there are a total of several complete crystal grains side by side, that is, the number of times they need to be split can be quickly known, for example, if there are five complete crystal grains side by side. , then it needs to split six times. [0024] Please refer to FIG. 6 again, since the cracked edge 21 of the wafer 20 is rarely along the first laser cutting line 31 and the second laser cutting line 32 is 100105729. Form No. A0101 Page 6 。 [0026] 0026 [0026] ❸ [0027] The direction of the rupture, so the present invention in the step!?, if the image of the die 4 非 is not a complete grain, can be carried out first Step G performs the displacement of the meter. First, step G can be shifted to the left in the direction of the search direction to select the die 4 on the left side and return to step C again. The purpose is to confirm whether the die 4 on the left side is a complete grain. If it is a complete grain, it means that it needs to continue searching. If the image of the die 40 is not a complete grain twice, the position can be ended and calibrated. Or the process of the previous stage can be continued. If the image of the die 4 is not a complete die twice, the displacement of the _ m word of step 6 can be shifted to the right of the search direction to select the die 40 on the right side and return The step b is repeated, and the purpose is to find out whether the die 40 on the right side is really a complete grain. If the image of the die 40 is not a complete grain three times, the image can be ended and calibrated. Location. For the sake of prudence, the process of the preceding stage can be continued. In the present invention, when the image of the die 40 is not a complete grain for three consecutive times, the displacement of the meter in step g can be shifted 45 degrees upward and upward along the search direction. Selecting the diagonal die 40 and returning to step C again, the purpose of which is to confirm whether the upper right 45 degree grain 40 is a complete grain, and if it is a complete grain, it is necessary to continue searching for 'when four consecutive times When the image of the die 40 is not a complete grain, the position can be ended and calibrated. The same process of the preceding stage can be used. If the image of the die 40 is not a complete grain four times in a row, the displacement of the rice word of the step G can be the reference point of the diagonal die 40, and the search direction is shifted to the right. Select the die 40 on the right side and return to step C again. If the image of the die 40 is not a complete die five times in a row, then the position is ended and calibrated. 100105729 Form No. 1010101 Page 7 of 19 1002009828-0 201236095 [0028] The flow of the previous stage is as follows: If the image of the die 40 is not a complete grain five times in a row, the displacement of the meter in step G can be The die 40 of the corner is a reference point, and is vertically shifted to the search direction. The die 4 on the left side is selected and returned to step C again. If the image of the die 40 is not a complete grain for six consecutive times Then, end and calibrate the location here. [0029] In addition, if the image of the die 40 is not a complete die six times in succession, the first image capturing position of the six consecutive images may be returned to the first image capturing position of the six consecutive images, and the rice word displacement of the step G is along the search. The direction is shifted upward by 45 degrees, the diagonal die 40 is selected and returned to step C again. If the image of the die 4 is not a complete grain for seven consecutive times, then the position is terminated and calibrated. . [〇〇3〇] or when the image of the die 40 is not a complete grain for seven consecutive times, the displacement of the meter in step G can be used as a reference point for the diagonal of the die 4, and the direction of the search is leftward. Select the die on the left side and return to the new step. If the image of the die 40 is not a complete die for eight consecutive times, then end and calibrate the position. [0031] Or, if the image of the die 40 is not a complete grain for eight consecutive times, the m-shaped displacement of the step G may be a diagonal of the die 4〇 as a reference point, and the vertical direction of the search direction is shifted to the right side. The die is turned back to step 匸' and when the image of the die 40 is not a complete die nine consecutive times, then the position is ended and calibrated. [0032] As described above, the present invention performs alignment by extracting a single crystal image of a single crystal image. If it is judged to be a complete crystal grain, it moves along the search direction, and the image is displaced at the next position. If it is judged to be a non-complete crystal grain , then end and calibrate the position here, or you can select the adjacent die 40 to add 100105729. Form No. A0101 Page 8 / 19 pages 1002009828-0 201236095 to determine whether it is a complete die, here Specifically, the order of the displacement directions of the meters is not a certain criterion. As described above, only the present invention proposes a feasible order, which is not the only order. According to this, the present invention can accurately calibrate the complete crystal grains located at the outermost edge of the wafer 20, and by counting the number of movements in the search direction, the number of knives that need to be split is known. It allows the user to know the number of times that the user needs to be split, so as to facilitate the user's splitting operation, and it does not need to install a panoramic image capturing system, so the cost is low to meet the needs of use. The above is only the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, that is, the equivalent changes and modifications of the content of the patent application of the present invention should be Technical Field of the Invention [Simplified Description of the Drawings] [0035] FIG. 1 is a partial structural view of a conventional wafer splitting device. [0036] FIG. 2 is a schematic view showing the structure of a wafer to be split. [0037] FIG. 3 is a schematic structural view of a conventional wafer fragment. 4 is a schematic diagram showing the steps of the process of the present invention. [0039] FIG. 5 is a schematic structural view of a wafer fragment of the present invention. 6 is a schematic diagram of another process step of the present invention. [Major component symbol description] [0041] Conventional [0042] 1, 9: Wafer 100105729 Form No. A0101 Page 9 / Total 19 Page 1002009828-0 201236095 [0043] 2 : Laser cutting line [0044] 3 : Blue Membrane [0045] 4 : Fixing Slipper [0046] 5 : Workbench [0047] 6 : Sickle [0048] 7 : Splitting table [0049] 8 : Image capture system [0050] 10 : Rupture edge [0051] The present invention [0052] G: Step [0053] 20 • Wafer [0054] 21: Rupture edge [0055] 31: First laser cutting line [0056] 32: Second laser cutting line [0057] 40 • Crystal Grain 100105729 Form No. A0101 Page 10 / Total 19 Page 1002009828-0