TW201235795A - Exposure apparatus and exposure method - Google Patents

Exposure apparatus and exposure method Download PDF

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Publication number
TW201235795A
TW201235795A TW100141725A TW100141725A TW201235795A TW 201235795 A TW201235795 A TW 201235795A TW 100141725 A TW100141725 A TW 100141725A TW 100141725 A TW100141725 A TW 100141725A TW 201235795 A TW201235795 A TW 201235795A
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Taiwan
Prior art keywords
exposure
light deflection
substrate
light
alignment film
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TW100141725A
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Chinese (zh)
Inventor
Ryouji Nemoto
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Hitachi High Tech Corp
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Publication of TW201235795A publication Critical patent/TW201235795A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70208—Multiple illumination paths, e.g. radiation distribution devices, microlens illumination systems, multiplexers or demultiplexers for single or multiple projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Liquid Crystal (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

Light deflection elements 2b, 2c, light deflection elements 2d, 2e, light deflection elements 2f, 2g, 2h, 2i, or light deflection elements 2j, 2k are disposed on an upper surface or a bottom surface of a photomask 2. An exposure light beam is inclinedly irradiated from the photomask 2 to a substrate 1. The light deflection elements 2b, 2c, light deflection elements 2d, 2e, light deflection elements 2f, 2g, 2h, 2i, or light deflection elements 2j, 2k make the exposure light beam irradiated from an exposure light beam-irradiating unit 30 penetrate therethrough, and make a traveling direction of the exposure light beam incline. Each of the light deflection elements 2b, 2c, light deflection elements 2d, 2e, light deflection elements 2f, 2g, 2h, 2i, or light deflection elements 2j, 2k make the traveling direction of the exposure light beams irradiated from the exposure light beam-irradiating unit 30 respectively incline to different directions.

Description

201235795 六、發明說明： 【發明所屬之技術領域】 本發明關於一種配向膜的曝光裝置以及曝光方法，在 液晶顯示裝置的製造過程中，將直線偏光的曝光光束照射 至包含高分子化合物的配向膜，使配向膜產生調整液晶的 排列方向的配向特性，本發明特別關於如下的配向膜的曝 光裝置以及曝光方法，使用光掩模（photomask )(以下稱 為“光罩”）在一個基板上的配向膜中形成多個不同的配 向區域。 【先前技術】 將液晶封入至薄膜電晶體（Thin Film Transistor，TFT ) 基板與彩色濾光片（color filter)基板之間，從而製造主動 矩陣（active matrix)驅動方式的液晶顯示裝置，在TFT 基板以及彩色濾光片基板的表面，形成有用以調整液晶的 排列方向的配向膜。以往，藉由“摩擦（rubbing)法”來 進行如下的處理，所述“摩擦法”利用布來對配向膜的表 面進行擦拭，所述處理使配向膜產生調整液晶的排列方向 的配向特性，但近年來，已開發出了 “光配向法”，該“光 配向法”將直線偏光的紫外光照射至包含聚醯亞胺等的高 分子化合物的配向膜，選擇性地使偏光方向的高分子鏈發 生反應，從而產生異向性。 專利文獻1中揭示有如下的技術，即，為了使液晶顯 示裝置的視野角擴大，使顯示品質提高，以及使對比度 (contrast)提高，在包夾著液晶層的一對基板上，將各基 201235795 板上的配向膜分別分割成預傾斜（pretilt)方向相差約180 。的兩個配向區域’以使一個基板上的配向區域的邊界與另 一個基板上的配向區域的邊界大致正交的方式，使兩個基 板貼合，從而形成四個配向狀態的區域。 [先前技術文獻] [專利文獻] [專利文獻1]曰本專利特開平11-352486號公報 如專利文獻1所述，為了在一個基板上的配向膜中形 成多個不同的配向區域，必須將直線偏光的紫外光從不同 的方向’傾斜地照射至每個配向區域。另外，為了對每個 配向區域進行曝光，需要將曝光的配向區域以外的區域予 以覆蓋的光罩。 以往，在光微影（photolittiography )技術中所使用的 接近式（proximity)曝光裝置中，在光罩的上方設置有曝 光光束照射裝置’垂直地將曝光光束從曝光光束照射裝置 照射至光罩，所述接近式曝光裝置是在光罩與基板之間設 置有微小的間隙（接近間隙（proximity gap ))，將光罩 的圖案（pattern)轉印至基板。對於對配向膜進行曝光的 曝光裝置而言’若使用與接近曝光裝置相同的構成，將曝 光光束傾斜地從曝光光束照射裝置照射至光罩，則曝光光 束所通過的區域會大幅度地擴大，裝置内需要大空間。 另外’以往的接近式曝光裝置中所使用的曝光光束照 射裝置無法將曝光光束的照射方向予以變更，因此，為了 在一個基板上的配向膜中形成多個不同的配向區域，必須 201235795 4a> 知上/X ▲ 在每次對各配向區域進行曝光時，將基板從夾具（chuck) 上拆除之後使基板的朝向旋轉。因此，存在如下的問題， 即，工作時間（tact time )變長，產量（throughput)下降。 【發明内容】 本發明的課題在於：將曝光光束傾斜地照射至配向膜 而不使曝光光束所通過的區域大幅度地擴大。另外，本發 明的課題在於·當在一個基板上的配向膜中形成多個不同 的配向區域時，使工作時間縮短，從而使產量提高。 本發明的配向膜的曝光裝置包括：支撐著基板的夾 具、保持著光罩的光罩固定架（mask holder)、以及照射 出直線偏光的曝光光束的曝光光束照射裝置，在光罩與基 板之間設置微小的間隙，將從所述曝光光束照射裝置照射 出的直線偏光的曝光光束經由光罩而照射至基板，使塗布 於基板的配向膜產生調整液晶的排列方向的配向特性，在 配向膜的曝光裝置中，將光偏轉元件設置於光罩的上表面 或下表面，將曝光光束傾斜地從光罩照射至基板，所述光 偏轉元件使從曝光光束照射裝置照射出的曝光光束透過， 且使曝光光束的前進方向傾斜。 另外，本發明的配向膜的曝光方法是利用夾具來支撐 著基板，利用光罩固定架來保持著光罩，在光罩與基板之 間設置微小的間隙’將從曝光光束照射裝置照射出的直線 偏光的曝光光束經由光罩而照射至基板，使塗布於棊板的 配向膜產生調整液晶的排列方向的配向特性，將光偏轉元 件設置於光罩的上表面或下表面，將曝光光束傾斜地從光 6 ⑧ 201235795 39522pif S = f二：述光偏轉元件使從曝光光束照射裝置照 射出的曝絲束透過，錢曝絲束的前進方向傾斜。 將光偏轉元件設置於光罩的上表面或下表面，將曝光 :傾斜地k光罩騎至基板，所述光偏轉元件使從曝光 ^束照射裝置騎出的曝光光束透過，且㈣光光束的前 、方向傾斜’因此’與直接將曝光光束傾斜地從曝光光束 照射裝置照射至光罩的航相味，曝光光束所通過的區 域不會大幅度地擴大，曝光光束傾斜_向配向膜照射。 而且，本發明的配向膜的曝光裝置是將多個種類的光 偏轉元件設置於光罩的上表面或下表面，各種光偏轉元件 使從曝光光束照射裝置照射出的曝光光束的前進方向分別 向不同的方向傾斜。另外，本發明的配向膜的曝光方法是 將多個種類的光偏轉元件設置於光罩的上表面或下表面， 所述多個種類的光偏轉元件使從曝光光束照射裝置照射出 的曝光光束的前進方向分別向不同的方向傾斜。將多個種 類的光偏轉元件設置於光罩的上表面或下表面，所述多個 種類的光偏轉元件使從曝光光束照射裝置照射出的曝光光 束的前進方向分別向不同的方向傾斜，因此，曝光光束從 不同的方向，傾斜地同時從光罩照射至基板。因此，當在 一個基板上的配向膜中形成多個不同的配向區域時，無需 每次在對各配向區域進行曝光時，將基板從夾具上拆除之 後使基板的朝向旋轉，可同時形成多個不同的配向區域， 因此，工作時間縮短，產量提高。 ’本發明的配向膜的曝光裝置是將兩種光偏轉元 7 201235795201235795 6. Technical Field of the Invention The present invention relates to an exposure apparatus for an alignment film and an exposure method for irradiating a linearly polarized exposure beam to an alignment film containing a polymer compound in a process of manufacturing a liquid crystal display device. The alignment film is provided with alignment characteristics for adjusting the alignment direction of the liquid crystal. The present invention particularly relates to an exposure apparatus and an exposure method of an alignment film using a photomask (hereinafter referred to as "photomask") on one substrate. A plurality of different alignment regions are formed in the alignment film. [Prior Art] A liquid crystal display device of an active matrix driving type is fabricated by encapsulating a liquid crystal between a thin film transistor (TFT) substrate and a color filter substrate, in a TFT substrate And a surface of the color filter substrate to form an alignment film for adjusting the alignment direction of the liquid crystal. Conventionally, the "rubbing method" which wipes the surface of the alignment film by a rubbing method, which causes the alignment film to have an alignment characteristic that adjusts the alignment direction of the liquid crystal, is performed by a "rubbing method". However, in recent years, the "photo-alignment method" has been developed, which irradiates linearly polarized ultraviolet light to an alignment film of a polymer compound containing polyimine or the like to selectively make the polarization direction high. The molecular chain reacts to produce anisotropy. Patent Document 1 discloses a technique for increasing the viewing angle of a liquid crystal display device, improving display quality, and improving contrast, and forming a substrate on a pair of substrates sandwiching a liquid crystal layer. The alignment film on the 201235795 board is divided into pretilt directions that differ by approximately 180. The two alignment regions are formed so that the two substrates are bonded to each other so that the boundary between the alignment regions on one substrate and the alignment region on the other substrate are substantially orthogonal to each other, thereby forming four regions in the alignment state. [Prior Art Document] [Patent Document 1] As disclosed in Patent Document 1, in order to form a plurality of different alignment regions in an alignment film on one substrate, it is necessary to The linearly polarized ultraviolet light is obliquely illuminated from different directions to each of the alignment regions. Further, in order to expose each of the alignment regions, it is necessary to expose the regions other than the exposed alignment regions to the mask. Conventionally, in a proximity exposure apparatus used in photolithography, an exposure beam irradiation device is disposed above a reticle to vertically illuminate an exposure beam from an exposure beam irradiation device to a reticle. In the proximity exposure apparatus, a slight gap (proximity gap) is provided between the reticle and the substrate, and a pattern of the reticle is transferred to the substrate. For an exposure apparatus that exposes an alignment film, if the exposure beam is irradiated obliquely from the exposure beam irradiation device to the photomask using the same configuration as that of the proximity exposure device, the area through which the exposure beam passes is greatly enlarged. Need a lot of space inside. Further, the exposure beam irradiation device used in the conventional proximity exposure apparatus cannot change the irradiation direction of the exposure beam. Therefore, in order to form a plurality of different alignment regions in the alignment film on one substrate, it is necessary to know 201235795 4a> Upper /X ▲ When each exposure area is exposed, the substrate is removed from the chuck and the orientation of the substrate is rotated. Therefore, there is a problem that the tact time becomes long and the throughput decreases. SUMMARY OF THE INVENTION An object of the present invention is to irradiate an exposure beam obliquely to an alignment film without greatly expanding a region through which an exposure beam passes. Further, the object of the present invention is to shorten the working time and to increase the yield when a plurality of different alignment regions are formed in the alignment film on one substrate. The exposure apparatus of the alignment film of the present invention comprises: a jig supporting the substrate, a mask holder holding the photomask, and an exposure beam irradiation device for exposing the exposure beam of the linearly polarized light, in the photomask and the substrate A small gap is provided, and the linearly polarized exposure light beam emitted from the exposure beam irradiation device is irradiated onto the substrate via the mask, and the alignment film applied to the substrate is adjusted to align the alignment direction of the liquid crystal. In the exposure apparatus, the light deflection element is disposed on the upper surface or the lower surface of the reticle, and the exposure beam is obliquely irradiated from the reticle to the substrate, and the light deflection element transmits the exposure light beam emitted from the exposure beam irradiation device, and The direction of advancement of the exposure beam is tilted. Further, in the exposure method of the alignment film of the present invention, the substrate is supported by a jig, and the photomask holder is used to hold the photomask, and a small gap is provided between the photomask and the substrate, which is irradiated from the exposure beam irradiation device. The linearly polarized exposure beam is irradiated onto the substrate via the mask, and the alignment film applied to the gusset is subjected to an alignment characteristic for adjusting the alignment direction of the liquid crystal, and the light deflection element is provided on the upper surface or the lower surface of the reticle, and the exposure beam is obliquely From the light 6 8 201235795 39522pif S = f 2: The light deflection element transmits the exposed tow beam irradiated from the exposure beam irradiation device, and the direction in which the money exposure tow is inclined is inclined. Locating the light deflection element on the upper or lower surface of the reticle, exposing: tilting the reticle to the substrate, the light deflection element transmits the exposure beam that is pulled from the exposure beam illumination device, and (4) the light beam The front and the direction are inclined 'so that' and the directivity of the exposure beam is directly irradiated from the exposure beam irradiation device to the photographic mask, and the region through which the exposure beam passes is not greatly enlarged, and the exposure beam is tilted toward the alignment film. Further, in the exposure apparatus of the alignment film of the present invention, a plurality of types of light deflection elements are provided on the upper surface or the lower surface of the reticle, and the various light deflection elements respectively advance the direction of advancement of the exposure light beams emitted from the exposure beam irradiation device Tilt in different directions. Further, the exposure method of the alignment film of the present invention is to provide a plurality of types of light deflection elements on the upper surface or the lower surface of the reticle, and the plurality of types of light deflection elements illuminate the exposure beam from the exposure beam irradiation device The direction of advancement is tilted in different directions. Providing a plurality of types of light deflection elements on an upper surface or a lower surface of the reticle, the plurality of types of light deflection elements tilting the advance directions of the exposure light beams emitted from the exposure beam irradiation device in different directions, respectively The exposure beam is irradiated from the reticle to the substrate at different angles from different directions. Therefore, when a plurality of different alignment regions are formed in the alignment film on one substrate, it is not necessary to rotate the substrate from the jig after each exposure of the alignment regions, and the substrate can be rotated at the same time. Different alignment areas, therefore, shorter working hours and higher yields. The exposure device of the alignment film of the present invention is to deflect two kinds of light 7 201235795

JVDZZpiI 件設置於光罩的下表面，各種光偏轉元件使從曝光光束照 射裝置照射出的曝光光束的前進方向朝彼此大致相差⑽ 度的方向傾斜。另外，本發明的配向膜的曝光方法是將兩 種光偏轉元件設置於光罩的下表面，所述兩種光偏轉元件 使從曝光光束照射裝置照射出的曝光光束的前進方向朝彼 此大致相差180度的方向傾斜。將兩種光偏轉元件設置於 光罩的下表面，所述兩種光偏轉元件使從曝光光束照射裝 置照射出的曝光光束的前進方向朝彼此大致相差18〇度的 方向傾斜，因此，曝光光束分別從大致相差18〇度的方向， 傾斜地同時從光罩照射至基板，在一個基板上的配向膜 中’同時形成預傾斜方向大致相差18〇度的兩種配向區域。 a或者，本發明的配向膜的曝光裝置是將四種光偏轉元 件設置於光罩的下表面，各種光偏轉元件使從曝光光束照 射裝置照射出的曝光光束的前進方向朝彼此大致相差9〇 度的方向傾斜。另外，本發明的配向膜的曝光方法是將四 種光偏轉元件設置於光罩的下表面，所述四種光偏轉元件 使k曝光光束照射裝置照射出的曝光光束的前進方向朝彼 此大致相差90度的方向傾斜。將四種光偏轉元件設置於光 罩的下表面，所述四種光偏轉元件使從曝光光束照射裝置 照射出的曝光光束的前進方向朝彼此大致相差9〇度的方 向傾斜，因此，曝光光束分別從大致相差90度的方向，傾 斜地同時從光罩照射至基板，在一個基板上的配向膜中， 同時形成預傾斜方向大致相差9〇度的四種配向區域。 或者’本發明的配向膜的曝光裝置是將兩種光偏轉元 ⑧ 201235795 39522pif 罩的下表面’各種光偏轉元件使從曝光光束照 曝光光束的前進方向朝彼此大致相差9〇 二杏很^斜。另外，本發明的配向膜的曝光方法是將兩 轉70件妓於光罩的下表面，所述兩種光偏轉元件 使攸曝光光賴職置騎出的曝光光束㈣進方向朝彼 ^大致相差90度的方向傾斜。將兩種光偏轉元件設置於光 的下表面’所述兩種光偏轉元件使從曝絲束照射裝置 照射出的曝光光束的前進方向朝彼此大致相差90度的方 向傾斜，因此，曝光光束分別從大致祕90度的方向，傾 斜地同時從光罩騎至基板，在_個基板上的配向膜中， 同時形成預傾斜方向大致相差9G度的兩種配向區域。 、而且，在本發明的配向膜的曝光裝置中，光偏轉元件 為透射型_ (blazed)繞射光柵，該透射型閃耀繞射光 拇槽的σ]面形狀為鑛齒狀。另外，本發明的配向膜的曝光 方法疋使用槽的剖面形狀為鋸齒狀的透射型閃耀繞射光柵 作為光偏轉元件。使用透射型閃耀繞射光柵作為光偏轉元 件’藉此’透過光偏轉元件時的曝光光束的損失少。 根據本發明’將光偏轉元件設置於光罩的上表面或下 表面’將曝光光束傾斜地從光罩照射至基板，所述光偏轉 元件使從曝光光束照射裝置照射出的曝光光束透過，且使 曝光光束的前進方向傾斜，藉此，可將曝光光束傾斜地照 射至配向膜而不會使曝光光束所通過的區域大幅度地擴 大。 而且’根據本發明，將多個種類的光偏轉元件設置於 201235795 光罩的上表面或下表面，所述多個種類的光偏轉元件使從 曝光光束照射裝置照射出的曝光光束的前進方向分別向不 同的方向傾斜，藉此，當在一個基板上的配向骐中形成多 個不同的配向區域時，可使工作時間縮短，從而使產量提 高。 而且，根據本發明，將兩種光偏轉元件設置於光罩的 下表面，所述兩種光偏轉元件使從曝光光束照射裝置照射 出的曝光光束的前進方向朝彼此大致相差18〇度的方向傾 斜，藉此，可在一個基板上的配向膜中，同時形成預傾斜 方向大致相差180度的兩種配向區域。 或者，根據本發明，將四種光偏轉元件設置於光罩的 下表面，所述四種光偏轉元件使從曝光光束照射裝置照射 出的曝光光束的前進方向朝彼此大致相差9〇度的方向傾 斜，藉此，可在一個基板上的配向膜中，同時形成預傾斜 方向大致相差90度的四種配向區域。 或者，根據本發明，將兩種光偏轉元件設置於光罩的 下表面，所述兩種光偏轉元件使從曝光光束照射裝置照射 出的曝光光束的前進方向朝彼此大致相差9〇度的方向傾 斜，藉此，可在一個基板上的配向膜中，同時形成預傾斜 方向大致相差90度的兩種配向區域。 而且’根據本發明’使用透射型閃耀繞射光栅作為光 偏轉元件，藉此，可使透過光偏轉元件時的曝光光束的損 失減少。 為讓本發明之上述特徵和優點能更明顯易懂，下文特 201235795 39522pif 舉實施例’並配合所附圖式作詳細說明如下。 【實施方式】 圖1是表示本發明的一個實施方式的配向膜的曝光裝 置的概略構成的圖。曝光裝置包括：基座（base) 3、X引 導件（guide) 4、X平臺（stage) 5、Y引導件6、Y平臺 7、Θ平臺8、夾具支撐台9、夾具1〇、光罩固定架20、曝 光光束照射裝置30、光源控制裝置40、平臺驅動電路60、 以及主控制裝置70。曝光裝置除了包括所述構件之外，還 包括基板搬送機械臂（robot)、溫度控制單元（unit)等， 所述基板搬送機械臂將基板1搬入至夹具1〇，且將基板1 從夾具10上搬出，所述溫度控制單元對裝置内的溫度進行 管理。 再者，以下所說明的實施方式中的χγ方向為例示， 也可對X方向與γ方向進行調換。 圖1中，夾具10位於對基板1的配向膜進行曝光的 曝光位置。在遠離曝光位置的裝載（1〇ad) /卸載（unl〇ad) 位置，藉由未圖示的基板搬送機械臂來將基板丨搬入至夾 具10，且將基板1從夾具1〇中搬出。使用設置於夾具1〇 的多個頂出銷（pin)，將基板i裝載於夾具1〇以及從失 具1〇中卸載基板1。頂出銷收納在夾具1〇的内部，所述 頂出銷從夾具10的内部上升，當將基板i裝載於夾具1〇 時’所述頂出銷從基板搬送機械臂接受基板i，當從失具 上卸載基板1時，所述頂出顧基板丨遞送至基板搬^ 機械是。爽具10對基板i的背面進行真空吸附，從而支樓 11 201235795 者该基板1的背面。基板1的表面塗布有包含聚醯亞胺等 的高分子化合物的配向膜。 夾具10經由夾具支稽台9而搭載於q平臺8，在0平臺 8的下方設置有Y平臺7以及X平臺5。X平臺5搭載於 基座3上所設置的X引導件4’且沿著X引導件4向X方 向（圖1的附圖縱深方向）移動。γ平臺7私載於X平臺 5上所設置的Y引導件6’且沿著γ引導件6向γ方向（圖 1的附圖橫方向）移動。Θ平臺8搭载於γ平臺7，且向θ 方向旋轉。夾具支撐台9搭載於θ平臺8,且在多個部位支 撐著夾具10。X平臺5、Y平臺7、以及Θ平臺8中設置有 滾珠螺杆（ball screw)以及馬達（mot〇r)、或線性馬達 (linear motor)等的未圖示的驅動機構，各驅動機構是由 平臺驅動電路60來驅動。 X平臺5向X方向移動以及γ平臺7向γ方向移動， 藉此來使夾具10在裝載/卸載位置與曝光位置之間移動。 在裝載/卸載位置，X平臺5向X方向移動，γ平臺7向γ 方向移動，以及Θ平臺8向Θ方向旋轉，藉此來對搭載於夾 具1〇的基板1進行預對準（prealignment)。在曝光位置， 利用未圖示的Z-傾斜（tilt)機構來使後述的光罩固定架 20向2方向（圖！的附圖上下方向）移動以及傾斜，藉此 來使光罩2與基板1的間隙對準。接著，X平臺5向乂曰方 向移，，Y平臺7向γ方向移動，以及㊀平臺8向0方向旋 轉藉此來使光罩2與基板1的位置對準。主控制襞置川 對平臺驅動電路60進行控制，從而使χ平臺5向χ方向 201235795 39522pif 移動，使Y平臺7向Y方向移動’以及使θ平臺8向0 旋轉。 再者，在本實施方式中，使光罩固定架2〇向ζ方向 移動以及傾斜，藉此來使光罩2與基板丨的間隙對準，^ 也可將z-傾斜機構設置於夾具支撐台9，使夾具1〇向ζ 方向移動以及傾斜，藉此來使光罩2與基板丨的間隙對準。 曝光光束照射裝置30包括：燈（lamp) 31、聚光鏡 32、第一平面鏡33、透鏡群34、擋門（shutte〇 35、偏光 元件36、凹面鏡37、第二平面鏡38、以及電源41。使用 如水銀燈、鹵素燈（halogen lamp)、以及氙氣燈（xen〇n lamp)等的在，燈泡（bulb)内封入有高壓氣體（㈣的放 ，型的燈作為燈3卜在燈31的周ϋ設置有聚絲32，該 聚光鏡32使燈31所產生的光匯聚。燈31所產生的光因聚 光鏡32而匯聚，且向第一平面鏡33照射。 圖2疋從上方來對第一平面鏡、凹面鏡以及第二平面 鏡的配置進行觀察所見的圖。被第-平面鏡33反射的光向 包含複眼透鏡（flyeyelens)或柱狀透鏡（rQdlens)等的 透鏡群34入射，透過透鏡群34之後，該光的照度分佈變 得均/一。擋門35在對基板〗的配向膜進行曝光時打開，在 不進行曝光時關閉。當擋門35打開時，透過透鏡群34的 光透過偏光元件36而成為直線偏光，接著被凹面鏡37反 ^後而成為平行光束。圖！中，被凹面鏡37反射的光被 制^平面鏡38反射，接著垂直地向附圖下方照射。光源控 ，裝置40藉由主控制裝置7〇的控制來對從電源41向燈 13 201235795. 31供給的電力進行控制，從而對曝光光束的照度進行 即0 在曝光位置的上方，設置有保持著光罩2的光罩固定 架20。在光罩固定架2〇中設置有供曝光光束通過的開口， 在光罩固定架20的下表面的開口的周圍，設置有未圖示的 吸附槽。光罩固定架2〇藉由未圖示的吸附槽來對光罩2 的周邊部進行真空吸附，從而將光罩2保持於下表面。從 曝光光束照射裝置3〇照射出的曝光光束透過光罩2而向基 板1照射，藉此來對基板1的配向膜進行曝光。 以下’對本實施方式的配向膜的曝光方法進行說明。 圖3 (a)是本發明的一個實施方式的光罩的頂視圖，圖3 (b)是圖3 (a)的A-A部分的剖面圖，圖3 (c)是圖3 (a) 的B-B部分的剖面圖。如圖3 (b)、圖3 (c)所示， 在光罩2的下表面形成有圖案2a。曝光光束會透過光罩2 的下表面的未形成有圖案2a的部分。如圖3 (a)、圖3 (b) 、以及圖3 (c)所示，在光罩2的上表面安裝有光 偏轉TL件2b、2c。該光偏轉元件2b、2c使垂直地從曝光 ^束照射裝置30照射出的曝光光束透過，且使曝光光束的 前進方向朝彼此大致相差180度的方向傾斜，從而將曝光 光束傾斜地從光罩2照射至基板1。在本實施方式中，使 用槽的剖面形狀為鋸齒狀的透射型閃耀繞射光栅作為光偏 轉元件2b、2c。使用槽的剖面形狀為鑛齒狀的透射型閃耀 繞射光柵作為光偏轉元件2b、2c，藉此，透過光偏轉元件 2b' 時的曝光光束的損失少。圖3 (a)中，光偏轉元件 201235795 39522pif 2b、2c上的箭頭表示藉由光偏轉元件2b、2c來使曝光光 束傾斜時的方向。 如圖3 (b)所示，垂直地從曝光光束照射裝置30照 射出的曝光光束透過光偏轉元件2b之後，前進方向朝左斜 下方傾斜，且從右斜上方照射至基板丨。因此，根據配向 膜的性質等，當預傾斜方向沿著曝光光束的前進方向時， 藉由從光罩2向基板1照射的曝光光束來使基板丨的配向 膜產生如下的配向特性，該配向特性是指使預傾斜方向處 於附圖左側。另外，根據配向膜的性質等，當預傾斜方向 沿著與曝光光束的前進方向相反的方向時，藉由從光罩2 向基板1照射的曝光光束來使基板丨的配向膜產生如下的 配向特性，該配向特性是指使預傾斜方向處於附圖右側。 另外，如圖3 (c)所示，垂直地從曝光光束照射裝置 30照射出的曝光光束透過光偏轉元件2c之後，前進方向 朝右斜下方傾斜，且從左斜上方照射至基板丨。因此，根 據配向膜的性質等，當預傾斜方向沿著曝光光束的前進方 向時，藉由從光罩2向基板1照射的曝光光束來使基板1 的配向膜產生如下的配向特性，該配向特性是指使預傾斜 方向處於附圖右側。另外，根據配向膜的性質等，當預傾 斜方向沿著與曝光光束的前進方向相反的方向時，藉由從 光罩2向基板1照射的曝光光束來使基板丨的配向膜產生The JVDZZpiI member is disposed on the lower surface of the reticle, and the various light deflecting elements incline the advancing direction of the exposure beam irradiated from the exposure beam irradiating device in a direction substantially different (10) degrees from each other. Further, the exposure method of the alignment film of the present invention is to provide two kinds of light deflection elements on the lower surface of the reticle, the two kinds of light deflection elements making the advancement direction of the exposure light beams irradiated from the exposure beam irradiation device substantially different from each other Tilt in the direction of 180 degrees. Two kinds of light deflection elements are disposed on a lower surface of the reticle, and the two kinds of light deflection elements tilt the advance direction of the exposure light beams irradiated from the exposure beam irradiation device toward a direction substantially different from each other by 18 degrees, and thus, the exposure beam The two alignment regions in which the pretilt directions are substantially different by 18 degrees are simultaneously formed in the alignment film on one substrate from the illuminating film to the substrate obliquely simultaneously in a direction substantially different from each other by 18 degrees. a Alternatively, the exposure apparatus of the alignment film of the present invention has four kinds of light deflection elements disposed on the lower surface of the reticle, and the various light deflection elements cause the advancement direction of the exposure light beams irradiated from the exposure light beam irradiation means to be substantially different from each other by 9 〇. The direction of the degree is inclined. Further, the exposure method of the alignment film of the present invention is to provide four kinds of light deflection elements on the lower surface of the reticle, and the four kinds of light deflection elements make the advance direction of the exposure light beams irradiated by the k-exposure beam irradiation device substantially different from each other. The direction of 90 degrees is inclined. Providing four kinds of light deflection elements on the lower surface of the reticle, the four light deflection elements tilting the advance direction of the exposure light beams irradiated from the exposure beam irradiation device toward a direction substantially different from each other by 9 degrees, and thus, the exposure beam Four alignment areas in which the pretilt directions are substantially different by 9 degrees are simultaneously formed in the alignment film on one substrate from the reticle to the substrate from the direction substantially different by 90 degrees. Or 'the exposure device of the alignment film of the present invention is that the two light deflection elements 8 201235795 39522pif the lower surface of the cover' various light deflection elements make the direction of the exposure beam from the exposure beam to be substantially different from each other. . In addition, the exposure method of the alignment film of the present invention is to smash two pieces of 70 pieces onto the lower surface of the reticle, and the two kinds of light deflection elements make the exposure light beam (four) of the 攸 exposure light immersed in the direction of the ray. Tilted in a direction that is 90 degrees apart. The two light deflection elements are disposed on the lower surface of the light. The two light deflection elements tilt the advance direction of the exposure light beam emitted from the exposure beam irradiation device toward a direction substantially different from each other by 90 degrees. Therefore, the exposure light beams are respectively From the direction of approximately 90 degrees, the reticle is simultaneously slanted from the reticle to the substrate, and in the alignment film on the _ substrate, two alignment regions having a pre-tilt direction which is substantially different by 9 G degrees are simultaneously formed. Further, in the exposure apparatus of the alignment film of the present invention, the light deflection element is a transmissive type blazed diffraction grating, and the σ] plane shape of the transmission type stroboscopic diffracted light groove is a mineral tooth shape. Further, the exposure method of the alignment film of the present invention uses a transmission-type blazed diffraction grating having a zigzag cross-sectional shape as a light deflection element. The transmission type blazed diffraction grating is used as the light deflection element 'by which the loss of the exposure beam when passing through the light deflection element is small. According to the present invention, 'the light deflecting element is disposed on the upper surface or the lower surface of the reticle', the exposure light beam is obliquely irradiated from the reticle to the substrate, and the light deflecting element transmits the exposure light beam irradiated from the exposure beam irradiating device, and The advancing direction of the exposure beam is inclined, whereby the exposure beam can be obliquely irradiated to the alignment film without greatly expanding the area through which the exposure beam passes. Further, according to the present invention, a plurality of kinds of light deflection elements are disposed on the upper surface or the lower surface of the 201235795 reticle, the plurality of kinds of light deflection elements respectively advancing the advance directions of the exposure beams irradiated from the exposure beam irradiation device The tilting is performed in different directions, whereby when a plurality of different alignment regions are formed in the alignment turns on one substrate, the working time can be shortened, thereby increasing the yield. Moreover, according to the present invention, two kinds of light deflection elements are disposed on the lower surface of the reticle, and the two kinds of light deflection elements cause the advancement direction of the exposure light beams irradiated from the exposure light beam irradiation means to be substantially different from each other by 18 degrees. By tilting, it is possible to simultaneously form two alignment regions in which the pretilt directions are substantially different by 180 degrees in the alignment film on one substrate. Alternatively, according to the present invention, four kinds of light deflection elements are disposed on the lower surface of the reticle, and the four kinds of light deflection elements cause the advancement direction of the exposure light beams irradiated from the exposure light beam irradiation means to be substantially different from each other by 9 degrees. By tilting, it is possible to simultaneously form four alignment regions in which the pretilt directions are substantially different by 90 degrees in the alignment film on one substrate. Alternatively, according to the present invention, two kinds of light deflection elements are disposed on the lower surface of the reticle, and the two kinds of light deflection elements cause the advancement direction of the exposure light beams irradiated from the exposure light beam irradiation means to be substantially different from each other by 9 degrees. By tilting, it is possible to simultaneously form two alignment regions in which the pretilt directions are substantially different by 90 degrees in the alignment film on one substrate. Further, the transmissive blazed diffraction grating is used as the light deflection element according to the present invention, whereby the loss of the exposure light beam when passing through the light deflection element can be reduced. In order to make the above features and advantages of the present invention more comprehensible, the following is a detailed description of the embodiments of the present invention. [Embodiment] FIG. 1 is a view showing a schematic configuration of an exposure apparatus of an alignment film according to an embodiment of the present invention. The exposure device comprises: a base 3, an X guide 4, an X stage 5, a Y guide 6, a Y platform 7, a cymbal platform 8, a clamp support table 9, a clamp 1 〇, a reticle The holder 20, the exposure beam irradiation device 30, the light source control device 40, the stage drive circuit 60, and the main control device 70. The exposure device includes, in addition to the member, a substrate transfer robot, a temperature control unit, and the like, the substrate transfer robot moves the substrate 1 into the jig 1 and the substrate 1 from the jig 10 Moving up, the temperature control unit manages the temperature within the device. Further, the χγ direction in the embodiment described below is exemplified, and the X direction and the γ direction may be exchanged. In Fig. 1, the jig 10 is located at an exposure position for exposing the alignment film of the substrate 1. At a loading/unloading position away from the exposure position, the substrate is transported to the jig 10 by a substrate transfer robot (not shown), and the substrate 1 is carried out from the jig 1 . The substrate i is loaded on the jig 1 and the substrate 1 is unloaded from the dislocation 1〇 using a plurality of ejector pins provided on the jig 1〇. The ejector pin is housed inside the jig 1 , the ejector pin is lifted from the inside of the jig 10 , and when the substrate i is loaded on the jig 1 ′, the ejector pin receives the substrate i from the substrate transfer robot, when When the substrate 1 is unloaded, the ejection of the substrate is performed to the substrate. The cool device 10 vacuum-adsorbs the back surface of the substrate i so that the back of the substrate 1 is the branch 11 201235795. The surface of the substrate 1 is coated with an alignment film containing a polymer compound such as polyimine. The jig 10 is mounted on the q-platform 8 via the jig table 9, and the Y-platform 7 and the X-platform 5 are provided below the 0-platform 8. The X stage 5 is mounted on the X guide 4' provided on the base 3, and moves along the X guide 4 in the X direction (the depth direction of the drawing of Fig. 1). The γ stage 7 is privately carried on the Y guide 6' provided on the X stage 5 and moves in the γ direction (the horizontal direction of the drawing of Fig. 1) along the γ guide 6. The crucible platform 8 is mounted on the γ stage 7 and rotates in the θ direction. The jig support table 9 is mounted on the θ stage 8, and the jig 10 is supported at a plurality of locations. The X platform 5, the Y platform 7, and the cymbal platform 8 are provided with a drive mechanism (not shown) such as a ball screw, a motor, or a linear motor, and each drive mechanism is composed of The platform drive circuit 60 is driven. The X platform 5 moves in the X direction and the γ stage 7 moves in the γ direction, thereby moving the jig 10 between the loading/unloading position and the exposure position. At the loading/unloading position, the X stage 5 moves in the X direction, the γ stage 7 moves in the γ direction, and the Θ platform 8 rotates in the Θ direction, thereby pre-aligning the substrate 1 mounted on the jig 1〇. . At the exposure position, the mask holder 20, which will be described later, is moved and tilted in the two directions (the vertical direction of the drawing in the drawing) by a Z-tilt mechanism (not shown), thereby making the mask 2 and the substrate The gap of 1 is aligned. Next, the X stage 5 is moved in the 乂曰 direction, the Y stage 7 is moved in the γ direction, and the platform 8 is rotated in the 0 direction to align the position of the reticle 2 with the substrate 1. The main control device sets the platform drive circuit 60 to move the cymbal platform 5 to the χ direction 201235795 39522pif, the Y platform 7 to the Y direction, and the θ platform 8 to 0. Furthermore, in the present embodiment, the mask holder 2 is moved and tilted in the x-direction, whereby the gap between the mask 2 and the substrate is aligned, and the z-tilt mechanism can be placed on the holder. The stage 9 moves and tilts the jig 1 in the ζ direction, thereby aligning the mask 2 with the gap of the substrate 。. The exposure beam irradiation device 30 includes a lamp 31, a condensing mirror 32, a first plane mirror 33, a lens group 34, a shutter (shutte〇35, a polarizing element 36, a concave mirror 37, a second plane mirror 38, and a power source 41. A mercury lamp, a halogen lamp, a xenon lamp, or the like, a high-pressure gas is enclosed in a bulb (a type of lamp is used as a lamp 3). There is a collecting wire 32 which converges the light generated by the lamp 31. The light generated by the lamp 31 is concentrated by the condensing mirror 32 and is irradiated to the first plane mirror 33. Fig. 2 第一 From the top, the first plane mirror, the concave mirror, and The arrangement of the second plane mirror is observed. The light reflected by the first plane mirror 33 is incident on the lens group 34 including a flyeye lens or a lenticular lens (rQdlens), and the illuminance of the light is transmitted through the lens group 34. The distribution becomes equal to one. The shutter 35 is opened when the alignment film of the substrate is exposed, and is closed when no exposure is performed. When the shutter 35 is opened, the light transmitted through the lens group 34 passes through the polarizing element 36 to become linearly polarized. , pick up The concave mirror 37 is reversed to become a parallel beam. In the figure, the light reflected by the concave mirror 37 is reflected by the plane mirror 38, and then vertically irradiated to the lower side of the drawing. The light source is controlled, and the device 40 is controlled by the main control unit 7 The control is performed to control the electric power supplied from the power source 41 to the lamp 13 201235795. 31, so that the illuminance of the exposure beam is 0, that is, above the exposure position, the reticle holder 20 holding the reticle 2 is provided. An opening for the exposure light beam is provided in the cover holder 2, and an adsorption groove (not shown) is provided around the opening of the lower surface of the mask holder 20. The mask holder 2 is not shown. The adsorption tank vacuum-adsorbs the peripheral portion of the mask 2 to hold the mask 2 on the lower surface. The exposure light beam emitted from the exposure beam irradiation device 3 passes through the mask 2 and is irradiated onto the substrate 1, thereby The alignment film of the substrate 1 is exposed. Hereinafter, a method of exposing the alignment film of the present embodiment will be described. Fig. 3 (a) is a top view of a photomask according to an embodiment of the present invention, and Fig. 3 (b) is a view of Fig. 3 ( Sectional view of the AA part of a) Figure 3 (c) is a cross-sectional view taken along line BB of Figure 3 (a). As shown in Figures 3 (b) and 3 (c), a pattern 2a is formed on the lower surface of the mask 2. The exposure beam transmits light. A portion of the lower surface of the cover 2 where the pattern 2a is not formed. As shown in Figs. 3(a), 3(b), and 3(c), a light deflection TL 2b is attached to the upper surface of the mask 2. 2c. The light deflection elements 2b, 2c transmit the exposure light beams that are vertically emitted from the exposure beam irradiation device 30, and tilt the advancement direction of the exposure light beams to a direction substantially different from each other by 180 degrees, thereby obliquely exposing the exposure light beams from The photomask 2 is irradiated onto the substrate 1. In the present embodiment, a transmissive stroboscopic diffraction grating having a zigzag cross-sectional shape is used as the light deflection elements 2b and 2c. The use of the groove-shaped transmission-type blazed diffraction grating as the light deflection elements 2b and 2c, whereby the loss of the exposure light beam when passing through the light deflection element 2b' is small. In Fig. 3 (a), the arrows on the light deflection elements 201235795 39522pif 2b, 2c indicate the directions when the exposure beams are tilted by the light deflection elements 2b, 2c. As shown in Fig. 3 (b), after the exposure beam irradiated from the exposure beam irradiation device 30 vertically passes through the light deflection element 2b, the advancing direction is inclined obliquely downward to the left and is irradiated obliquely from the right to the substrate 丨. Therefore, according to the properties of the alignment film or the like, when the pretilt direction is along the advancing direction of the exposure beam, the alignment film irradiated from the reticle 2 toward the substrate 1 causes the alignment film of the substrate 产生 to have the following alignment characteristics, the alignment The characteristic means that the pretilt direction is on the left side of the drawing. Further, according to the properties of the alignment film or the like, when the pretilt direction is in the opposite direction to the advancing direction of the exposure beam, the alignment film irradiated from the reticle 2 toward the substrate 1 causes the alignment film of the substrate 产生 to have the following alignment Characteristic, the alignment characteristic means that the pretilt direction is on the right side of the drawing. Further, as shown in Fig. 3(c), after the exposure beam irradiated from the exposure beam irradiating device 30 vertically passes through the light deflection element 2c, the advancing direction is inclined obliquely downward to the right, and is irradiated obliquely from the left to the substrate 丨. Therefore, according to the properties of the alignment film or the like, when the pretilt direction is along the advancing direction of the exposure beam, the alignment film of the substrate 1 is caused to have an alignment characteristic by the exposure beam irradiated from the reticle 2 toward the substrate 1, the alignment The characteristic means that the pretilt direction is on the right side of the drawing. Further, depending on the properties of the alignment film or the like, when the pretilt direction is in a direction opposite to the advancing direction of the exposure beam, the alignment film of the substrate 产生 is generated by the exposure beam irradiated from the reticle 2 to the substrate 1.

如下的配向特性，該配向特性是指使預傾斜方向處於 左侧。 U 圖4 U)是本發明的其他實施方式的光罩的底視圖， 15 201235795The alignment characteristic is such that the pretilt direction is on the left side. U Figure 4 U) is a bottom view of a reticle according to another embodiment of the present invention, 15 201235795

^VDZZpiI 圖4⑻是圖4 (a)的C-C部分的剖面圖，圖4 (c)是 圖4(0的D-D部分的剖面圖。如圖4(a)、圖4(b)、 以及圖4 (G)所不’在光罩2的下表面形成有圖案2a。曝 光光束會透過光罩2的下表面的未形成有圖案&的部分。 f光罩2的下表面的未形成有_ & _分形成有光偏 ^件2d、2e。該光偏轉元件2d、&使垂直地從曝光光 ‘、、、射裝i 30,崎出的曝光光束透過，且使曝光光束的前 進方向朝彼此大致相差⑽度的方向傾斜從而將曝光光 束傾斜地從光罩2照射至基板i。在本實施方式中，使用 槽的剖面形狀為銀齒狀的透射型閃耀繞射光柵作為光偏轉 元件2d 2e。使用槽㈣面形狀為鋸齒狀的透射型閃耀繞 射光栅作為光偏轉元件2d、2e，藉此，透過光偏轉元件2心 6寺的曝光光束的損失少。圖4 (a) +，光偏轉元件2d、 2/ f的箭頭表邱由光偏轉元件2d、2e來使曝光光束傾 斜時的方向。 如圖4 (b)所示，垂直地從曝光光束照射裝置3〇照 射出的曝光光束透過光偏轉元件％之後，前進方向朝左斜 下方傾斜，且從右斜上方照射至基板i。因此，根據配向 f的性質等’當麵斜方向沿著曝絲束的前進方向時， 曰由從光罩2向基板丨照射的曝光光束來使基板丨的配向 膜產生如下的配向特性，該配向特性是指使預傾斜方向處 於=圖左侧。另外，根據配向膜的性質等，當預傾斜方向 /σ著/、曝光光束的則進方向相反的方向時，藉由從光罩2 向基板1照射的曝光光束來使基板i的配向膜產生如下的 201235795 39522pif 配向特性，該配向躲是指使麵斜方向處於㈣右側。 另外，如圖4 (c)所示，垂直地從曝光光束照射裝 3〇照射出的曝光光束透過光偏轉元件2e之後，前進^向 朝右斜下方傾斜，且從左斜上方照射至基板1。因此，拇 據配向膜的性質等，#預傾斜方向沿著曝光光束的前進方 向時’藉由從光罩2向基板丨照射的曝光光束來使基板^ 的配向膜產生如下的配向特性，該配向特性是指使預傾斜 方向處於=圖右側。另外，根據配向膜的性質等，當預傾 斜方向沿著與曝光絲的前進方向相反的方向時，藉由從 光罩2向基板丨照射㈣光光束來使基板丨的配向膜產生 如下的配向特性，該向特性是指使預傾斜方向處 左側。 將光偏轉元件2b、2c或光偏轉元件2d、2e設置於光 罩2的上表面或下表面，將曝光光束傾斜地從光罩二照射 至基板卜所述光偏轉元件2b、2e或规轉元件2d、^ 4吏k曝光光束照射裝置3G闕&的曝光光束透過，且使曝 .光光束的祕方向傾斜，因此，與直接麟絲束傾斜地 從曝光絲騎裝置3G照魅料2的料械較，曝光 光束所通過·域不會沾度地歓，曝絲束傾斜地向 基板1的配向膜照射。 而且’將多__錢轉元件2b、2e或光偏轉元 件2d、2e设置於光罩的上表面或下表φ，所述多個種類的 光偏轉兀件2b、2c或光偏轉元件2d、2e使從曝光光束照 射裝置照射出的曝光光束的前進方向分別向不同的方向傾 17 201235795 斜，因此，曝光光束分別從不同的方向，傾斜地同時從光 罩2照射至基板1。因此，當在一個基板上的配向膜中形 成多個不同的配向區域時，無需每次在對各配向區域進行 曝光時，將基板1從夾具10上拆除之後使基板丨的朝向旋 轉，可同時形成多個不同的配向區域，因此，工作時間縮 短，產量提高。 特別是將兩種光偏轉元件2b、2c或光偏轉元件2d、 2e設置於光罩的上表面或下表面，所述兩種光偏轉元件 2b、2c或光偏轉元件2d、2e使從曝光光束照射裝置3〇照 射出的曝光光束的前進方向朝彼此大致相差18〇度的方向 傾斜，因此，在一個基板上的配向膜中，同時形成預傾斜 方向大致相差180度的兩種配向區域。 圖5 (a)是本發明的另一實施方式的光罩的底視圖， 圖5 (b)是圖5 (a)的ε·Ε部分的剖面圖，圖5 (c)是 圖5(a)的F-F部分的剖面圖。如圖5(a)、圖5(b)、 以及圖5 (c)所示，在光罩2的下表面形成有圖案。曝 光光束會透過鮮2的下表面的未形成有 圖案2a的部分。 在光罩2的下表面的未形成有圖案2a的部分，形成有光偏 轉兀件2f、2g、2h、2i。該光偏轉元件2f、2g、2h、2i使 垂直地從曝光光束照射裝置3〇照射出的曝光光束透過，且 使曝光光束的前進方向朝彼此大致相差90度的方向傾 從㈣曝光光束傾斜地從光罩2照射至基板卜在本 施方式巾’使用槽的剖面形狀為鑛齒狀的透射型閃耀繞 ，光拇作為光偏轉元件2f、2g、2h、2i。使用槽的剖面形 ⑧ 18 201235795 3y522pif 狀為鑛齒狀的透射型閃耀繞射光栅作為光偏轉元件2f、 2g、2h、2i，藉此’透過光偏轉元件2f、2g、2h、2i時的 曝光光束的損失少。圖5(a)中，光偏轉元件2f、2g、2h、 2i上的箭頭表示藉由光偏轉元件2f、2g、2h、2i來使曝光 光束傾斜時的方向。 、 如圖5 (b)所示，垂直地從曝光光束照射裝置3〇照 射出的曝光光束透過光偏轉元件2f之後，前進方向朝左& 下方傾斜，且從右斜上方照射至基板丨。因此，根據配向 膜的性質等，當預傾斜方向沿著曝光光束的前進方向時， 藉由從光罩2向基板1照射的曝光光束來使基板1的配向 膜產生如下的配向特性，該配向特性是指使預傾斜方向處 於，圖左側。另外，根據配向膜的性質等，當預傾斜方向 沿著與曝光光束的前進方向相反的方向時，藉由從光罩2 向基板1照射的曝光光束來使基板丨的配向膜產生如下的 配向特性，該配向特性是指使預傾斜方向處於附圖右側。 另外，垂直地從曝光光束照射裝置3〇照射出的曝光 光束透過光偏轉元件2i之後，前進方向沿著附圖近前方向 朝斜下方傾斜，且從附圖縱深方向的斜上方照射至基板 1。因此，根據配向膜的性質等，當預傾斜方向沿著曝光光 束的前進方向時，藉由從光罩2向基板i照射的曝光光束 來使基板1的配向膜產生如下的配向特性，該配向特性是 才曰使預傾斜方向處於附圖近前側。另外，根據配向膜的性 質等’當預傾斜方向沿著與曝光光束的前進方向相反的方 向時，藉由從光罩2向基板1照射的曝光光束來使基板1 201235795 的配向膜產生如下的配向特性，該配向特性是指使預傾 方向處於附圖縱深側。 辦 如圖5 (c)所示，垂直地從曝光光束照射裝置邛照 射出的曝光光束透過光偏轉元件2g之後，前進方向沿著^ 圖縱深方向朝斜下方傾斜，且從附圖近前方向的斜上方照 射至基板1。因此，根據配向膜的性質等，當預傾斜方G 沿著曝光光束的前進方向時，藉由從光罩2向基板丨照射 的曝光光束來使基板1的配向膜產生如下的配向特性了該 配向特性是指使預傾斜方向處於附圖縱深側。另外，根^ 配向膜的性質等，當預傾斜方向沿著與曝光光束的前進方 向相反的方向時，藉由從光罩2向基板1照射的曝光光束 來使基板1的配向膜產生如下的配向特性，該配向特性是 指使預傾斜方向處於附圖近前側。 另外’垂直地從曝光光束照射裝置30照射出的曝光 光束透過光偏轉元件2h之後，前進方向朝右斜下方傾斜， 且從左斜上方照射至基板1。因此，根據配向膜的性質等， 當預傾斜方向沿著曝光光束的前進方向時，藉由從光罩2 向基板1照射的曝光光束來使基板1的配向膜產生如下的 配向特性，該配向特性是指使預傾斜方向處於附圖右側。 另外’根據配向膜的性質等，當預傾斜方向沿著與曝光光 束的前進方向相反的方向時，藉由從光罩2向基板1照射 的曝光光束來使基板1的配向膜產生如下的配向特性，該 配向特性是指使預傾斜方向處於附圖左側。 將四種光偏轉元件2f、2g、2h、2i設置於光罩2的下 20 ⑧ 201235795 jy^22pif ίΐ壯Ϊ述四種光偏轉元件2f、2g、2h、2i使從曝光光束 照射出的曝枝束的前進方向朝彼此大致相 又方向傾斜’因此’曝光光束分別從大致相差90 度的方向’傾斜地同時從光罩2照射至基板卜在一個基 板上的配向财’啊形成預傾斜方向大致相差90度的四 種配向區域。 圖$(ea)是本發明的另一實施方式的光罩的底視圖， 圖6 (b)是圖6 (a)的G-G部分的剖面圖，圖6 (c)是 圖6⑷的11-11部分的剖面圖。如®6( a)、圖6(b)、 (C)所示’在光罩2的下表面形成有圖案2a。曝 :: 透過光罩2的下表面的未形成有圖案2a的部分。 光=的下表面的未形成有_ 2&的部分，形成有光偏 70 J、2k。該光偏轉元件2j、2k使垂直地從曝光光束 照射裝置3G照射出的曝光光束透過，且使曝絲束的前進 方向朝彼此大致相差9G度的方向傾斜，從而將曝光光束傾 斜地從光罩2照射至基板卜在本實施方式中，使用槽的 剖面形狀為麵狀的透射型_繞射光柵作為光偏轉元件 2j、2k。使㈣的剖面雜為縣㈣透㈣閃耀繞 1作為光偏轉元件、2k，藉此’透過光偏轉元件2j、2k 時的·光縣的損失少。圖6(a)中，光偏轉元件2j、2k 上的箭頭表稀由光偏轉元件2j、2k來鶴枝束傾斜時 的方向。 如圖6 (b)所示’垂直地從曝光光束照射震置3〇照 射出的曝光光束透過域轉元件之後，前進方向朝左斜 21 201235795 ^yozzpif 下方傾斜’且從右斜上方照射至基板1。因此，根據配向 膜的性質專，當預傾斜方向沿著曝光光束的前進方向時， 藉由從光罩2向基板1照射的曝光光束來使基板丨的配向 膜產生如下的配向特性，該配向特性是指使預傾斜方向處 於附圖左侧《另外，根據配向膜的性質等，當預傾斜方向 沿著與曝光光束的前進方向相反的方向時，藉由從光罩2 向基板1照射的曝光光束來使基板1的配向膜產生如下的 配向特性，該配向特性是指使預傾斜方向處於附圖右侧。 另外，如圖6 (c)所示，垂直地從曝光光束照射裝置 30照射出的曝光光束透過光偏轉元件2k之後，前進方向 沿著附圖縱深方向朝斜下方傾斜，且從附圖近前方向的斜 上方照射至基板1。因此，根據配向膜的性質等，當預傾 斜方向沿著曝光光束的前進方向時，藉由從光罩2向基板 1照射的曝光光束來使基板丨的配向膜產生如下的配向特 性，該配向特性是指使預傾斜方向處於附圖縱深側。另外， 根據配向膜的性質等，當預傾斜方向沿著與曝光光束的前 進方向相反的方向時，藉由從光罩2向基板丨照射的曝光 光束來使基板1的配向膜產生如下的配向特性，該配向特 性是指使預傾斜方向處於附圖近前側。 將兩種光偏轉元件2j、2k設置於光罩2的下表面，所 述兩種光偏轉元件2j、2k使從曝光光束照射裝置3〇照射 出的曝光光束的前進方向朝彼此大致相差9〇度的方向傾 斜，因此，曝光光束分別從大致相差9〇度的方向，傾斜地 同時從光罩2照射至基板1，在一個基板上的配向膜令， ⑧ 22 201235795 同時形成預傾斜方向大致相差90度的兩種配向區域。 根據以上所說明的實施方式，將光偏轉元;2b、2c 或光偏轉元件2d、2e或光偏轉元件2f、2g、2¾、2i哎光 偏轉元件2j、2k設置於光罩2的上表面或下表面，將曝光 光束傾斜地從光罩2照射至基板卜所述光偏轉元件❿、 2c或光偏轉元件2d、2e或光偏轉元件2f、2g、2h、2i戋 光偏轉元件2j、2k使從曝光光束照射裝置3〇照射出的曝 光光束透過，且使曝光光束的前進方向傾斜，藉此，可將 曝光光束傾斜地照射至配向膜而不會使曝光光^所通過的 區域大幅度地擴大。 而且’將多個種類的光偏轉元件2b、2e或光偏轉元 =、2e或光偏轉元件2f、2g、2h、&或光偏轉元件习、 於光罩2的上表面或下表面，所述多個種類的光偏 ^件2b、2e或域轉元件2d、2e或光偏轉元件仏如、 2ι或光偏轉元件习、仏使從曝光光束照射裳置川照 此出，光光束的前進方向分別料_方向傾斜，藉 ’虽在-個基板上的配向膜中形成多個不同的配向區域 、’可使OL作時間縮短，從而使產量提高。 訃且使用透射型閃耀繞射光栅作為光偏轉元件2b、 光If偏^件2d、26或光偏轉元件2f、H以或 ‘光束的Γ失ί少A’藉此’可使透過光偏轉元件時的曝光 另外’根據圖3(a)〜圖3(e)以及圖4U)〜圖4 C所不的實施方式，將兩種光偏轉元件2b、2c或光偏 23 201235795 轉元件2d、2e設置於光罩的上表面或下表面，所述兩種光 偏轉元件2b、2c或光偏轉元件2d、2e使從曝光光束照射 裝置3 0照射出的曝光光束的前進方向朝彼此大致相差18 〇 度的方向傾斜，藉此，可在一個基板上的配向膜中，同時 形成預傾斜方向大致相差18〇度的兩種配向區域。 另外，根據圖5 (a)〜圖5 (c)所示的實施方式， 將四種光偏轉元件2f、2g、2h、2i設置於光罩的下表面， 所述四種光偏轉元件2f、2g、2h、2i使從曝光光束照射裝 置30照射出的曝光光束的前進方向朝彼此大致相差9〇度 的方向傾斜，藉此，可在一個基板上的配向膜中，同時形 成預傾斜方向大致相差90度的四種配向區域。 另外，根據圖6 (a)〜圖6 (c)所示的實施方式， 將兩種光偏轉元件2j、2k設置於光罩的下表面，所述兩種 光偏轉元件2j、2k使從曝光光束照射裝置3〇照射出的曝 光光束的前進方向朝彼此大致相差90度的方向傾斜，藉 此，可在一個基板上的配向膜中，同時形成預傾斜方向大 致相差90度的兩種配向區域。 雖然本發明已以實施例揭露如上，然其並非用以限定 本發明，任何所屬技術領域中具有通常知識者，在不脫離 本發明之精神和範圍内，當可作些許之更動與潤飾，故本 發明之保護範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1是表示本發明的一個實施方式的配向膜的曝光裝 置的概略構成的圖。 ⑧ 24 201235795 jyszzpif 圖2是從上方來對第一平面鏡、凹面鏡以及第二平面 鏡的配置進行觀察所見的圖。 圖3 (a)是本發明的一個實施方式的光罩的頂視圖， 圖3(b)是圖3(a)的A-A部分的剖面圖，圖3 (c)是 圖3 ( a )的B-B部分的剖面圖。 圖4 (a)是本發明的其他實施方式的光罩的底視圖， 圖4 (b)是圖4 (a)的C-C部分的剖面圖，圖4 (c)是 圖4 ( a )的D-D部分的剖面圖。 圖5 (a)是本發明的另一實施方式的光罩的底視圖， 圖5(b)是圖5(a)的E-E部分的剖面圖，圖5 (c)是 圖5 ( a )的F-F部分的剖面圖。 圖6(a)是本發明的另一實施方式的光罩的底視圖， 圖6(b)是圖6(a)的G-G部分的剖面圖，圖6 (c)是 圖6 ( a )的H-H部分的剖面圖。 【主要元件符號說明】 1 ·基板 2 :光罩 2a ·圖案 2b、2c、2d、2e、2f、2g、2h、2i、2j、2k :光偏轉元件 3 :基座 4 : X引導件 5 : X平臺 6 : Y引導件 7 : Y平臺 25 201235795 ^^3ZZpif 8 : Θ平臺 9:夾具支撐台 10 .爽具 20 :光罩固定架 30 :曝光光束照射裝置 31 :燈 32 :聚光鏡 33 :第一平面鏡 34 :透鏡群 35 :擋門 36 :偏光元件 37 :凹面鏡 38 :第二平面鏡 40 :光源控制裝置 41 :電源 60 :平臺驅動電路 70 :主控制裝置 Α-Α、Β-Β、C-C、D-D、Ε-Ε、F-F、G-G、Η_Η :部分 X、Υ、Ζ、Θ :方向 ⑧ 26^VDZZpiI Figure 4(8) is a cross-sectional view of the CC portion of Figure 4(a), and Figure 4(c) is a cross-sectional view of Figure 4 (the DD portion of Figure 0. Figure 4(a), Figure 4(b), and Figure 4 (G) does not have a pattern 2a formed on the lower surface of the reticle 2. The exposure beam passes through the lower surface of the reticle 2 where the pattern & not formed. The lower surface of the reticle 2 is not formed _ The light deflecting elements 2d and 2e are formed by the light deflecting elements 2d and 2i, and the exposure light beams which are vertically emitted from the exposure light ', and the shot i 30 are transmitted, and the exposure beam is advanced. The directions are inclined toward directions substantially different from each other by 10 degrees to illuminate the exposure beam obliquely from the reticle 2 to the substrate i. In the present embodiment, a transmission-type blazed diffraction grating having a groove shape of a silver-tooth shape is used as the light deflection element. 2d 2e. A transmissive stroboscopic diffraction grating having a groove shape in a zigzag shape is used as the light deflection elements 2d and 2e, whereby the loss of the exposure beam transmitted through the light deflection element 2 is small. Fig. 4 (a) + The arrows of the light deflection elements 2d, 2/f are oriented by the light deflection elements 2d, 2e to tilt the exposure beam. b), after the exposure beam irradiated from the exposure beam irradiation device 3 垂直 vertically passes through the light deflection element %, the advancing direction is inclined obliquely downward to the left, and is irradiated obliquely from the right to the substrate i. Therefore, according to the alignment f When the surface is inclined in the advancing direction of the exposed tow, the exposure beam irradiated from the reticle 2 to the substrate 来 causes the alignment film of the substrate 产生 to have an alignment characteristic, which is a pretilt The direction is on the left side of the figure. In addition, depending on the properties of the alignment film, etc., when the pretilt direction / σ is / and the direction of the exposure beam is opposite, the exposure beam irradiated from the reticle 2 to the substrate 1 is used. The alignment film of the substrate i is caused to have the following 201235795 39522pif alignment characteristic, which is to make the surface oblique direction on the right side of (4). In addition, as shown in FIG. 4(c), the exposure from the exposure beam irradiation device is irradiated vertically. After the light beam is transmitted through the light deflection element 2e, the forward direction is inclined obliquely downward to the right, and is irradiated obliquely upward from the left to the substrate 1. Therefore, the nature of the protrusion according to the alignment film, etc., #pretilt direction along the exposure beam In the advancing direction, the alignment film of the substrate is caused by the exposure beam irradiated from the mask 2 to the substrate 产生, and the alignment characteristic is such that the pretilt direction is on the right side of the graph. Further, depending on the properties of the alignment film When the pretilt direction is in a direction opposite to the advancing direction of the exposure wire, the alignment film of the substrate 产生 is caused to have an alignment characteristic by irradiating the (four) light beam from the reticle 2 to the substrate ,, and the directional characteristic means The left side of the pretilt direction is disposed. The light deflecting elements 2b, 2c or the light deflecting elements 2d, 2e are disposed on the upper surface or the lower surface of the reticle 2, and the exposure beam is obliquely irradiated from the reticle 2 to the substrate, the light deflecting element 2b , 2e or the rotating element 2d, ^ 4 吏 k exposure beam irradiation device 3G 阙 & the exposure beam is transmitted, and the direction of the exposed light beam is tilted, therefore, obliquely from the direct wire bundle from the exposure wire riding device 3G According to the material of the glazing material 2, the exposure beam passes through the field, and the exposed wire bundle is obliquely irradiated to the alignment film of the substrate 1. Further, 'the plurality of __ money rotating elements 2b, 2e or the light deflecting elements 2d, 2e are disposed on the upper surface of the reticle or the lower surface φ, the plurality of kinds of light deflecting elements 2b, 2c or the light deflecting element 2d, 2e causes the advancing directions of the exposure light beams irradiated from the exposure beam irradiation device to be inclined in different directions 17 201235795, and therefore, the exposure light beams are simultaneously irradiated from the mask 2 to the substrate 1 obliquely from different directions. Therefore, when a plurality of different alignment regions are formed in the alignment film on one substrate, it is not necessary to rotate the substrate 1 from the jig 10 every time the exposure of each alignment region is performed, and the orientation of the substrate crucible can be rotated simultaneously. A plurality of different alignment regions are formed, so that the working time is shortened and the yield is increased. In particular, the two light deflecting elements 2b, 2c or the light deflecting elements 2d, 2e are arranged on the upper or lower surface of the reticle, and the two light deflecting elements 2b, 2c or the light deflecting elements 2d, 2e are such that the secondary beam is exposed. The advancing directions of the exposure light beams irradiated by the irradiation device 3 are inclined in a direction substantially different from each other by 18 degrees. Therefore, in the alignment film on one substrate, two kinds of alignment regions in which the pretilt directions are substantially different by 180 degrees are simultaneously formed. Figure 5 (a) is a bottom view of a reticle according to another embodiment of the present invention, Figure 5 (b) is a cross-sectional view of the ε · Ε portion of Figure 5 (a), Figure 5 (c) is Figure 5 (a) A cross-sectional view of the FF portion. As shown in FIGS. 5(a), 5(b), and 5(c), a pattern is formed on the lower surface of the mask 2. The exposed light beam is transmitted through the portion of the lower surface of the fresh 2 where the pattern 2a is not formed. In the portion of the lower surface of the reticle 2 where the pattern 2a is not formed, the light deflecting elements 2f, 2g, 2h, 2i are formed. The light deflection elements 2f, 2g, 2h, and 2i transmit the exposure light beams that are vertically emitted from the exposure light beam irradiation device 3, and cause the advancement direction of the exposure light beams to tilt obliquely from the (four) exposure light beams in a direction substantially different from each other by 90 degrees. The mask 2 is irradiated onto the substrate. The cross-sectional shape of the groove used in the present embodiment is a transmissive type of blazed shape, and the optical thumb is the light deflection elements 2f, 2g, 2h, and 2i. The cross-sectional shape of the groove is used as a light-deflecting element 2f, 2g, 2h, 2i as a light-deflecting element 2f, 2g, 2h, 2i, whereby the exposure is transmitted through the light deflection elements 2f, 2g, 2h, 2i The loss of the beam is small. In Fig. 5(a), the arrows on the light deflection elements 2f, 2g, 2h, 2i indicate the directions when the exposure light beams are tilted by the light deflection elements 2f, 2g, 2h, 2i. As shown in Fig. 5 (b), after the exposure beam which is vertically emitted from the exposure beam irradiation device 3 is transmitted through the light deflection element 2f, the advancing direction is inclined downward toward the left & and is irradiated from the right obliquely upward to the substrate 丨. Therefore, according to the properties of the alignment film or the like, when the pretilt direction is along the advancing direction of the exposure beam, the alignment film of the substrate 1 is caused to have an alignment characteristic by the exposure beam irradiated from the reticle 2 toward the substrate 1, the alignment The characteristic is that the pre-tilt direction is on the left side of the figure. Further, according to the properties of the alignment film or the like, when the pretilt direction is in the opposite direction to the advancing direction of the exposure beam, the alignment film irradiated from the reticle 2 toward the substrate 1 causes the alignment film of the substrate 产生 to have the following alignment Characteristic, the alignment characteristic means that the pretilt direction is on the right side of the drawing. Further, after the exposure beam irradiated from the exposure beam irradiation device 3 垂直 vertically passes through the light deflection element 2i, the advancing direction is inclined obliquely downward in the near-front direction of the drawing, and is irradiated to the substrate 1 obliquely upward in the depth direction of the drawing. Therefore, according to the properties of the alignment film or the like, when the pretilt direction is along the advancing direction of the exposure beam, the alignment film of the substrate 1 is caused to have an alignment characteristic by the exposure beam irradiated from the mask 2 to the substrate i, the alignment The characteristic is that the pretilt direction is on the near side of the drawing. Further, according to the properties of the alignment film, etc., when the pretilt direction is in the opposite direction to the advancing direction of the exposure beam, the alignment film of the substrate 1 201235795 is generated as follows by the exposure beam irradiated from the reticle 2 to the substrate 1. The alignment characteristic means that the pretilt direction is on the depth side of the drawing. As shown in FIG. 5(c), after the exposure beam irradiated from the exposure beam irradiation device 垂直 vertically passes through the light deflection element 2g, the advancing direction is inclined obliquely downward along the depth direction of the drawing, and is from the front direction of the drawing. The substrate 1 is irradiated obliquely upward. Therefore, according to the properties of the alignment film or the like, when the pretilt side G is along the advancing direction of the exposure beam, the alignment film of the substrate 1 is caused to have the following alignment characteristics by the exposure beam irradiated from the mask 2 to the substrate 了. The alignment characteristic means that the pretilt direction is on the depth side of the drawing. Further, when the pretilt direction is in a direction opposite to the advancing direction of the exposure beam, the alignment film irradiated from the photomask 2 to the substrate 1 causes the alignment film of the substrate 1 to be as follows. The alignment characteristic means that the pretilt direction is on the near side of the drawing. Further, after the exposure beam irradiated from the exposure beam irradiation device 30 vertically passes through the light deflection element 2h, the advancing direction is inclined obliquely downward to the right, and is irradiated obliquely from the left to the substrate 1. Therefore, according to the properties of the alignment film or the like, when the pretilt direction is along the advancing direction of the exposure beam, the alignment film of the substrate 1 is caused to have an alignment characteristic by the exposure beam irradiated from the reticle 2 toward the substrate 1, the alignment The characteristic means that the pretilt direction is on the right side of the drawing. Further, according to the nature of the alignment film or the like, when the pretilt direction is in the opposite direction to the advancing direction of the exposure light beam, the alignment film of the substrate 1 is caused to have the following alignment by the exposure light beam irradiated from the photomask 2 to the substrate 1. Characteristic, the alignment characteristic means that the pretilt direction is on the left side of the drawing. The four kinds of light deflection elements 2f, 2g, 2h, and 2i are disposed on the lower surface of the reticle 2 8 201235795 jy^22pif Ϊ Ϊ 四种 四种 四种 四种 四种 四种 四种 四种 四种 四种 四种 四种 四种 四种 四种 四种 四种 四种 四种 四种 四种 四种 四种 四种 四种 四种 四种 四种 四种 四种 四种 四种 四种 四种 四种 四种 四种 四种The advancing direction of the bundles is inclined toward each other in a substantially opposite direction. Therefore, the exposure beams are inclined from the direction substantially different by 90 degrees, and simultaneously irradiated from the reticle 2 to the alignment of the substrate on a substrate to form a pretilt direction. Four alignment areas that differ by 90 degrees. Figure $(ea) is a bottom view of a reticle according to another embodiment of the present invention, Figure 6(b) is a cross-sectional view of the GG portion of Figure 6(a), and Figure 6(c) is 11-11 of Figure 6(4) Part of the section view. As shown in Fig. 6 (a), Fig. 6 (b), and (C), a pattern 2a is formed on the lower surface of the photomask 2. Exposure: The portion of the lower surface of the reticle 2 that is not formed with the pattern 2a. The portion of the lower surface of the light = where _ 2 & is not formed is formed with light offsets 70 J, 2k. The light deflection elements 2j, 2k transmit the exposure light beams that are vertically emitted from the exposure light beam irradiation device 3G, and incline the advance direction of the exposure wire bundles in a direction substantially different from each other by 9 G degrees, thereby obliquely exposing the exposure light beams from the reticle 2 Irradiation to the substrate In the present embodiment, a transmissive-type diffraction grating having a planar cross-sectional shape is used as the light deflection elements 2j and 2k. The section (4) is mixed with the county (four) and the (four) blaze 1 is used as the light deflection element, 2k, whereby the loss of the light county when the light deflection elements 2j and 2k are transmitted is small. In Fig. 6(a), the arrow on the light deflection elements 2j, 2k is thinned by the light deflection elements 2j, 2k in the direction in which the crane beam is inclined. As shown in Fig. 6(b), after the exposure beam irradiated from the exposure beam is irradiated three times vertically through the domain rotating element, the advancing direction is inclined toward the left oblique 21 201235795 ^yozzpif and irradiated from the right obliquely upward to the substrate. 1. Therefore, according to the nature of the alignment film, when the pretilt direction is along the advancing direction of the exposure beam, the alignment film irradiated from the reticle 2 to the substrate 1 causes the alignment film of the substrate 产生 to have the following alignment characteristics, the alignment The characteristic is that the pretilt direction is on the left side of the drawing. In addition, according to the nature of the alignment film, etc., when the pretilt direction is in a direction opposite to the advancing direction of the exposure beam, the exposure is irradiated from the reticle 2 to the substrate 1. The light beam causes the alignment film of the substrate 1 to have an alignment characteristic which means that the pretilt direction is on the right side of the drawing. Further, as shown in FIG. 6(c), after the exposure beam irradiated from the exposure beam irradiation device 30 vertically passes through the light deflection element 2k, the advancing direction is inclined obliquely downward in the depth direction of the drawing, and is from the front direction of the drawing. The substrate 1 is irradiated obliquely upward. Therefore, according to the properties of the alignment film or the like, when the pretilt direction is along the advancing direction of the exposure beam, the alignment film irradiated from the reticle 2 toward the substrate 1 causes the alignment film of the substrate 产生 to have the following alignment characteristics, the alignment The characteristic means that the pretilt direction is on the depth side of the drawing. Further, according to the properties of the alignment film or the like, when the pretilt direction is in the opposite direction to the advancing direction of the exposure beam, the alignment film of the substrate 1 is caused to have the following alignment by the exposure beam irradiated from the reticle 2 toward the substrate 丨Characteristic, the alignment characteristic means that the pretilt direction is on the near side of the drawing. The two kinds of light deflection elements 2j, 2k are disposed on the lower surface of the reticle 2, and the two kinds of light deflection elements 2j, 2k cause the advancement direction of the exposure light beams irradiated from the exposure light beam irradiation means 3 to be substantially different from each other by 9 〇. The direction of the inclination is inclined. Therefore, the exposure light beams are obliquely simultaneously irradiated from the reticle 2 to the substrate 1 in a direction substantially different from each other by 9 degrees, and the alignment film on one substrate is made to form a pre-tilt direction which is substantially different from each other by 90 22 201235795. Two alignment areas of degree. According to the embodiment described above, the light deflecting elements; 2b, 2c or the light deflecting elements 2d, 2e or the light deflecting elements 2f, 2g, 23b, 2i, the light deflecting elements 2j, 2k are arranged on the upper surface of the reticle 2 or The lower surface irradiates the exposure beam obliquely from the reticle 2 to the substrate, the light deflection element ❿, 2c or the light deflection element 2d, 2e or the light deflection element 2f, 2g, 2h, 2i, and the light deflection element 2j, 2k The exposure beam irradiated by the exposure beam irradiation device 3 is transmitted, and the direction in which the exposure beam is advanced is inclined, whereby the exposure beam can be obliquely irradiated to the alignment film without greatly expanding the area through which the exposure light passes. Moreover, 'a plurality of kinds of light deflection elements 2b, 2e or light deflection elements =, 2e or light deflection elements 2f, 2g, 2h, & or light deflection elements are used on the upper or lower surface of the reticle 2, The plurality of types of optical deflecting members 2b, 2e or the domain rotating members 2d, 2e or the light deflecting members, for example, 2, or the light deflecting member, are used to illuminate the light beam from the exposure beam, and the light beam advances. The direction is inclined in the direction of the material _, and the yield is improved by forming a plurality of different alignment regions in the alignment film on the substrate, and shortening the OL time. And using a transmissive blazed diffraction grating as the light deflection element 2b, the light If polarizer 2d, 26 or the light deflection element 2f, H or 'the loss of the light beam A' thereby enabling the transmitted light deflection element At the same time, according to the embodiment shown in Fig. 3 (a) to Fig. 3 (e) and Fig. 4U) to Fig. 4 C, the two kinds of light deflection elements 2b, 2c or the optical deflecting 23 201235795 rotating elements 2d, 2e The light deflecting elements 2b, 2c or the light deflecting elements 2d, 2e are disposed on the upper surface or the lower surface of the reticle, and the advancing directions of the exposure beams irradiated from the exposure beam irradiating means 30 are substantially different from each other by 18 〇. The direction of the inclination is inclined, whereby two alignment regions in which the pretilt directions are substantially different by 18 degrees can be simultaneously formed in the alignment film on one substrate. Further, according to the embodiment shown in Figs. 5(a) to 5(c), four kinds of light deflection elements 2f, 2g, 2h, 2i are provided on the lower surface of the reticle, the four kinds of light deflection elements 2f, 2g, 2h, and 2i incline the advancing direction of the exposure beam irradiated from the exposure beam irradiating device 30 in a direction substantially different from each other by 9 degrees, whereby the pretilt direction can be formed simultaneously in the alignment film on one substrate. Four alignment areas that differ by 90 degrees. Further, according to the embodiment shown in Figs. 6(a) to 6(c), two kinds of light deflection elements 2j, 2k are provided on the lower surface of the reticle, and the two kinds of light deflection elements 2j, 2k are exposed. The advancing direction of the exposure beam irradiated by the beam irradiation device 3 is inclined in a direction substantially different from each other by 90 degrees, whereby two alignment regions in which the pretilt directions are substantially different by 90 degrees can be simultaneously formed in the alignment film on one substrate. . Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing a schematic configuration of an exposure apparatus of an alignment film according to an embodiment of the present invention. 8 24 201235795 jyszzpif Fig. 2 is a view showing the arrangement of the first plane mirror, the concave mirror, and the second plane mirror from above. Figure 3 (a) is a top view of a reticle according to an embodiment of the present invention, Figure 3 (b) is a cross-sectional view taken along line AA of Figure 3 (a), and Figure 3 (c) is a BB of Figure 3 (a) Part of the section view. Figure 4 (a) is a bottom view of a reticle according to another embodiment of the present invention, Figure 4 (b) is a cross-sectional view of the CC portion of Figure 4 (a), and Figure 4 (c) is a DD of Figure 4 (a) Part of the section view. Figure 5 (a) is a bottom view of a reticle according to another embodiment of the present invention, Figure 5 (b) is a cross-sectional view of the EE portion of Figure 5 (a), and Figure 5 (c) is Figure 5 (a) A cross-sectional view of the FF section. Figure 6(a) is a bottom view of a reticle according to another embodiment of the present invention, Figure 6(b) is a cross-sectional view of the GG portion of Figure 6(a), and Figure 6(c) is a view of Figure 6(a) A cross-sectional view of the HH section. [Description of main component symbols] 1 · Substrate 2 : Photomask 2a · Patterns 2b, 2c, 2d, 2e, 2f, 2g, 2h, 2i, 2j, 2k: Light deflection element 3: Base 4: X guide 5: X platform 6 : Y guide 7 : Y platform 25 201235795 ^^3ZZpif 8 : Θ platform 9 : clamp support table 10 . 爽 20 : reticle holder 30 : exposure beam irradiation device 31 : lamp 32 : condensing mirror 33 : A plane mirror 34: lens group 35: shutter door 36: polarizing element 37: concave mirror 38: second plane mirror 40: light source control device 41: power source 60: platform driving circuit 70: main control device Α-Α, Β-Β, CC, DD, Ε-Ε, FF, GG, Η_Η: Part X, Υ, Ζ, Θ: Direction 8 26

Claims (1)

201235795 七、申請專利範園： 1. 一種配向膜的曝光裝置，包括： 支撐著基板的夹具、保持著光罩的光罩固定架、以及 照射出直線偏光的曝光光束的曝光光束照射裝置，在所述 光罩與所述基板之間設置微小的間隙，將從所述曝光光束 照射裝置照射出的直線偏光的所述曝光光束經由所述光罩 而照射至所述基板，使塗布於所述基板的配向膜產生調整 液晶的排列方向的配向特性，所述配向膜的曝光裝置的特 徵在於： 將光偏轉元件設置於所述光罩的上表面或下表面，將 所述曝光光束傾斜地從所述光罩照射至所述基板，所述光 偏轉元件使從所述曝光光束照射裝置照射出的所述曝光光 束透過，且使所述曝光光束的前進方向傾斜。 2.如申請專利範圍第1項所述的配向膜的曝光裝 置，其中 將多個種類的所述光偏轉元件設置於所述光罩的上 表面或下表面，各種所述光偏轉元件使從所述曝光光束照 射裝置照射出的所述曝光光束的前進方向分別向不同的方 向傾斜。 3·如申凊專利範圍第2項所述的配向獏的曝光裝 置’其中 將兩種光偏轉元件設置於所述光罩的下表面，各種所 述光偏轉^件使從所述曝光光束照射裝置照射出的所述曝 光光束的前進方向朝彼此相差18〇度的方向傾斜。 27 201235795 4·如申請專利範圍第2項所述的配向膜的曝光 置，其中 將四種所述光偏轉元件設置於所述光罩的下表面，各 種所述光偏轉元件使從所述曝光光束照射襄置照射出的所 述曝光光束的前進方向朝彼此相差9G度的方向傾斜。 5. 如申请專利範圍第2項所述的配向膜的曝光裝 置，其中 將兩種所述光偏轉元件設置於所述光罩的下表面，各 種所述光偏轉元件使從所述曝光光束照射裝置照射出的所 述曝光光束的前進方向朝彼此相差90度的方向傾斜。 6. 如申請專利範圍第丨項至第5項中任一項所述的配 向膜的曝光裝置，其中 所述光偏轉元件為透射型閃耀繞射光柵，該透射型閃 耀繞射光柵的槽的剖面形狀為鋸齒狀。 7· —種配向膜的曝光方法， 利用夾具來支撑著基板，利用光罩固定架來保持著光 罩，在所述光罩與所述基板之間設置微小的間隙，將從曝 光光束照射裝置照射出的直線偏光的曝光光束經由所述光 罩而照射至所述基板，使塗布於所述基板的配向膜產生調 整液晶的排列方向的配向特性，所述配向膜的曝光方法的 特徵在於： 將光偏轉元件設置於所述光罩的上表面或下表面，將 所述曝光光束傾斜地從所述光罩照射至所述基板，所述光 偏轉元件使從所述曝光光束照射裝置照射出的所述曝光光 ⑧ 28 201235795 39522pif 束透過，且使所述曝光光束的前進方向傾斜。 8·如申請專利範圍第7項所述的配向膜的曝光方 法，其中 將多個種類的所述光偏轉元件設置於所述光罩的上 表面或下表面，所述多個種類的光偏轉元件使從所述曝光 光束照射裝置照射出的所述曝光光束的前進方向分別向不 同的方向傾斜。 9. 如申請專利範圍第8項所述的配向膜的曝光方 法，其中 將兩種所述光偏轉元件設置於所述光罩的下表面，所 述兩種光偏轉元件使從所述曝光光束照射裝置照射出的所 述曝光光束的前進方向朝彼此相差18〇度的方向傾斜。 10. 如申請專利範圍第8項所述的配向膜的曝光方 法，其中 將四種所述光偏轉元件設置於所述光罩的下表面，所 述四種光偏轉元件使從所述曝光光束照射裝置照射出的所 述曝光光束的前進方向朝彼此相差9()度的方向傾斜。 11. 如申叫專利範圍第8項所述的配向膜的曝光方 法，其中 將兩種所述光偏轉元件設置於所述光罩的下表面，所 件使從所述曝光光束照射裴置照射出的所 述曝先先束的^進方向朝彼此相差90度的方向傾斜。 配二利2第7項至第U項中任-項所述的 29 201235795 jyD/zpn 使用槽的剖面形狀為鋸齒狀的透射型閃耀繞射光柵 作為所述光偏轉元件。 ⑧ 30201235795 VII. Patent application garden: 1. An exposure device for an alignment film, comprising: a jig supporting a substrate, a reticle holder holding a reticle, and an exposure beam illuminating device for illuminating a linearly polarized exposure beam; A slight gap is formed between the photomask and the substrate, and the exposure light beam that is linearly polarized from the exposure beam irradiation device is irradiated to the substrate via the photomask to be applied to the substrate. The alignment film of the substrate generates alignment characteristics for adjusting the alignment direction of the liquid crystal, and the exposure device of the alignment film is characterized in that the light deflection element is disposed on the upper surface or the lower surface of the photomask, and the exposure beam is obliquely The photomask is irradiated to the substrate, and the light deflection element transmits the exposure light beam emitted from the exposure light beam irradiation device, and inclines the advancing direction of the exposure light beam. 2. The exposure apparatus of the alignment film according to claim 1, wherein a plurality of kinds of the light deflection elements are disposed on an upper surface or a lower surface of the reticle, and the plurality of the light deflection elements are made The advancing directions of the exposure beams irradiated by the exposure beam irradiation device are respectively inclined in different directions. 3. The exposure apparatus of the alignment cassette of claim 2, wherein two kinds of light deflection elements are disposed on a lower surface of the reticle, and the plurality of light deflection elements illuminate from the exposure beam The advancing direction of the exposure beam irradiated by the device is inclined toward a direction different from each other by 18 degrees. The exposure of the alignment film of claim 2, wherein four of the light deflection elements are disposed on a lower surface of the reticle, and the plurality of the light deflection elements are exposed from the exposure The advancing direction of the exposure beam irradiated by the beam irradiation means is inclined in a direction which is different from each other by 9G degrees. 5. The exposure apparatus of the alignment film according to claim 2, wherein two of the light deflection elements are disposed on a lower surface of the reticle, and the plurality of the light deflection elements illuminate from the exposure beam The advancing direction of the exposure beam irradiated by the device is inclined toward a direction different from each other by 90 degrees. 6. The exposure apparatus of the alignment film according to any one of claims 5 to 5, wherein the light deflection element is a transmission type blazed diffraction grating, the transmission type of the stroboscopic diffraction grating The cross-sectional shape is serrated. 7. A method for exposing an alignment film, supporting a substrate with a jig, holding a photomask by a photomask holder, and providing a slight gap between the photomask and the substrate, and irradiating the device from an exposure beam The exposure light beam of the linearly polarized light that has been irradiated is irradiated onto the substrate via the photomask, and the alignment film applied to the substrate is subjected to alignment characteristics for adjusting the alignment direction of the liquid crystal. The exposure method of the alignment film is characterized by: Providing a light deflection element on an upper surface or a lower surface of the reticle, irradiating the exposure beam obliquely from the reticle to the substrate, the light deflection element illuminating from the exposure beam irradiation device The exposure light 8 28 201235795 39522pif beam is transmitted, and the advancing direction of the exposure beam is tilted. 8. The exposure method of an alignment film according to claim 7, wherein a plurality of kinds of the light deflection elements are disposed on an upper surface or a lower surface of the reticle, the plurality of types of light deflection The element tilts the advancing directions of the exposure light beams emitted from the exposure beam irradiation device in different directions. 9. The exposure method of an alignment film according to claim 8, wherein two of the light deflection elements are disposed on a lower surface of the reticle, the two light deflection elements are made to be from the exposure beam The advancing direction of the exposure beam irradiated by the irradiation device is inclined in a direction which is different from each other by 18 degrees. 10. The exposure method of an alignment film according to claim 8, wherein four of the light deflection elements are disposed on a lower surface of the reticle, the four light deflection elements are made to be from the exposure beam The advancing direction of the exposure light beam irradiated by the irradiation device is inclined toward a direction different from each other by 9 (degrees). 11. The exposure method of the alignment film according to Item 8, wherein the two types of the light deflection elements are disposed on a lower surface of the reticle, and the member is irradiated from the exposure beam. The outward direction of the exposure is inclined in a direction different from each other by 90 degrees. 29 201235795 jyD/zpn The use of the groove has a cross-sectional shape in which the cross-sectional shape of the groove is a saw-toothed transmission type blazed diffraction grating as the light deflection element. 8 30
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