TW201235118A - Method for cleaning filter and method for washing or drying a processed article - Google Patents

Method for cleaning filter and method for washing or drying a processed article Download PDF

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TW201235118A
TW201235118A TW100106049A TW100106049A TW201235118A TW 201235118 A TW201235118 A TW 201235118A TW 100106049 A TW100106049 A TW 100106049A TW 100106049 A TW100106049 A TW 100106049A TW 201235118 A TW201235118 A TW 201235118A
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filter
carbon dioxide
cleaning
pressure
gas
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TW100106049A
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Chinese (zh)
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TWI501819B (en
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Hiroshi Sugawara
Yoshinori Ono
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Organo Corp
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Abstract

This invention aims at efficiently cleaning a filter for filtering carbon dioxide in gas, liquid, or supercritical state that is used for at least one of washing and drying a processed article. A method for cleaning the filter for filtering carbon dioxide in gas, liquid, or supercritical state that is used for at least one of washing and drying a processed article includes cleaning a filter 13 by passing carbon dioxide through the filter 13 to clean the filter 13 before using the filter 13 for filtering carbon dioxide in gas, liquid, or supercritical state.

Description

201235118 . 六、發明說明: . 【發明所屬之技術領域】 半導潔淨化方法,以及使用該方法之 子零件等之超臨界二氧化叙過㈣顧、冻電 【先前技術】 於文=’胃檢討清潔半導财置或施廳 之超臨界二氧化碳(臨= 从上之冋狐问壓製造出。超臨界二氧石 2性質门有優良的滲透力與驗。因:7 匕入a日圓,微小的凹部等部分,帶走並去除異物 t二有表面張力為零之特徵,即連微小的凹丄= Θ入’在因應半導縣置之高度密減而縮小凹部的寬 ^ 亦能發揮良好的清潔性能。由此等技術特^^來看,&臨二 氧化碳在下-世代之清潔媒介上的角色被齡麟。 1 一 腔室=之超臨界二氧化碳,可藉由收納有晶圓的 二t之抓而被間早地氣化,棚此—性質,對使用超臨界二氧 化石反於晶圓等之乾燥一事亦可加以檢討。 【發明内容】 [發明所欲解決的問題] 如所述,超臨界二氧化碳對於半導體裝置等之清潔 ^用的,但若超臨界二氧化碳中含有微粒子,而微粒子直在被 處理體附著、殘留,則可能會對製程之良率造成直接的影響。因 為了提升製程之良率,必須提升超臨界二氧化碳本身^潔淨· "'· 為了提升超臨界二氧化碳之潔淨度,宜使用過濾器來過濾超 201235118 臨界二氧化碳。本案發明人在過濾器部分,檢討採用燒結金 濾器或陶瓷過濾器。這些過濾器係被用以過濾在半導體 二 子零件之製造步驟中所使狀氮氣等。於這^助形“: 微細孔,可自氣體中除去微粒子。韻器由製造階段開 = 潔淨度管理’並因應其必要性進行清潔處理,以半導體級來τ。 另外’經由各階段之檢查或嚴密保存,在出貨之前施行 。 質管理。即便在半導體裝置等之製造現場,從安裝到設備上至= 始使用為止之期間,也實行充分的潔淨度管理。是故,得以^ 確保在一開始使用之後,即獲得具有高潔淨度之氣體。 3 、^前所述,因超臨界二氧化碳係二氧化碳在臨界點以上之言 酿、尚壓下所製造出,故在通過過濾器時二氧化碳之狀態(相 可因超臨界二氧化碳之供應過雜過魏設置位置兩者而改變。 例如,在以氣態二氧化碳為原料製造超臨界二氧化碳之情況下, ,過渡器之設置位置的不同’可能為_氣態之二氧化碳,亦可 ,為過渡超臨界二氧化碳。而氣態之二氧化碳—旦經液化, 態$二氧化碳為補製造超臨界二氧化碳之情形下,可能為過渡 液感之二氧化碳,亦可能為過濾超臨界二氧化碳。 〜 本案發明人認為:即便是液態或超臨界狀態之二氧化碳,其 原料仍為氣態之二氧化碳,因此在通過過濾器時二氧化碳之狀態 (相』}對過濾、器之性能或特性造成之影響並不大。意即,本案g =人認為:若使科導體級之習知的氣翻過㈣,無論二氧化 碳之狀態(相)為何,再一使用開始後即可獲得高潔淨度之二氧 化,。、細在實際情況下,使賴品(未使㈣)之過濾器過滤 液態或超臨界二氧化碳時,會發生被處理體遭微粒子污染之現象。 如所述,在欲提升液態或是超臨界狀態二氧化碳之潔淨度而 絲時,吾人確認:若過濾、11為新品(未使用過),則被處 體有遭職粒子污染之縣。—旦污紐生,製程之良率即惡 :對半導體裝置等之製程會給雜大的影響。另一方面,氣態 ϋ氧化碳以過濾器淨化的情況中,雖較不易產生此類現象,& 應盡可能防止此一現象之發生。201235118 . VI. Description of the invention: . [Technical field of invention] The semi-conductive cleaning method, and the supercritical dioxide of the sub-components using the method, etc. (4) Gu, frozen electricity [Prior Art] Yu Wen = 'Stomach Review Clean the semi-conducting carbon dioxide of the semi-conducting or the hall. (Pro = from the top of the fox fox to create pressure. Supercritical dioxin 2 nature door has excellent penetration and inspection. Because: 7 into a yen, tiny The concave portion and the like, take away and remove the foreign matter t, and the surface tension is zero, that is, even the small concave 丄 = Θ ' 在 因 因 因 因 因 因 因 因 因 因 因 因 因 因 因 因 因 因 因 因 因 因 因 因 因 因 因The cleaning performance. From this technical point of view, & the role of carbon dioxide in the next-generation clean media is aging. 1 a chamber = supercritical carbon dioxide, can be stored by the wafer t is caught and gasified early, and this property can be reviewed for the use of supercritical silica in contrast to the drying of wafers, etc. [Summary of the Invention] [Problems to be Solved by the Invention] Supercritical carbon dioxide for semiconducting The cleaning of the device is used, but if the supercritical carbon dioxide contains fine particles, and the microparticles are directly attached to the treated object, it may directly affect the yield of the process. Because of the improvement of the yield of the process, it is necessary to improve the yield of the process. Enhance supercritical carbon dioxide itself ^Clean · "'· In order to improve the cleanliness of supercritical carbon dioxide, filters should be used to filter the ultra-201235118 critical carbon dioxide. The inventor of this case in the filter section, reviewing the use of sintered gold filters or ceramic filters. These filters are used to filter nitrogen gas and the like in the manufacturing steps of the semiconductor sub-parts. In this case, "micropores can be removed from the gas. The rhyme is opened by the manufacturing stage = cleanliness management" And it is cleaned according to the necessity, and it is τ at the semiconductor level. In addition, it is carried out before shipment by inspection or strict preservation of each stage. Quality management. Even at the manufacturing site of semiconductor devices, from installation to equipment = Full cleanliness management is also implemented during the period of use. Therefore, it is ensured that at the beginning After use, a gas with high cleanliness is obtained. 3, ^ As described above, since the supercritical carbon dioxide carbon dioxide is produced at a critical point or higher, it is produced under pressure, so the state of carbon dioxide when passing through the filter ( The phase may change due to the supply of supercritical carbon dioxide over the Wei set position. For example, in the case of producing supercritical carbon dioxide from gaseous carbon dioxide as a raw material, the difference in the position of the transition device may be _ gaseous carbon dioxide. It can also be a transitional supercritical carbon dioxide. The gaseous carbon dioxide is liquefied, and the carbon dioxide is used to make supercritical carbon dioxide. It may be a transitional liquid carbon dioxide or a supercritical carbon dioxide filter. The inventor believes that even in the liquid or supercritical state of carbon dioxide, the raw material is still gaseous carbon dioxide, so the state of carbon dioxide (phase) when passing through the filter has little effect on the performance or characteristics of the filter. That is to say, in this case, g = people think that if the conventional gas of the conductor level is turned over (4), regardless of the state (phase) of the carbon dioxide, the high degree of cleanliness can be obtained after the start of use. In the actual situation, when the filter of Lai (not (4)) is filtered with liquid or supercritical carbon dioxide, the object to be treated is contaminated by particles. As mentioned above, when we want to improve the cleanliness of liquid or supercritical carbon dioxide, we confirm that if it is filtered, 11 is a new product (not used), it will be contaminated by the occupied particles. - Once the pollution is new, the yield of the process is evil: the process of semiconductor devices and the like will have a big impact. On the other hand, in the case where gaseous carbon monoxide is purified by a filter, although such a phenomenon is less likely to occur, & should prevent this phenomenon as much as possible.

4 S 201235118 為此本發明之目的在於提供一種有效率地將過濾器潔淨化 之方法,該過濾器係用於過濾被處理體之清潔或乾燥其中至少任 過知中所使用的氣體、液體或超臨界狀態之二氧化碳。另外, 本發明之目的在於提供一種使用此一方法來清潔或乾燥被處理體 之方法。 [解決問題之技術手段] 、巧本發明之一貫施態樣,提供一種用以過濾被處理體之清潔 或乾〒其巾至少任—過財所制氣體、液縣超臨界狀態之二 ί化ϊίί濾11的潔淨化料。此方法包含在使用過濾器過航 ϋ體或超臨界狀態二氧化碳之前,藉由使三氧化碳流通於過 濾器來進行過濾器之潔淨化。 過遽器如同前述實行充分的潔淨度管理,一般而言直接使用 亦?會造,任何問題。然而,本案發明人發現:在氣體、液體或 3界狀態之二氧化碳流通於猶器之時,仍有縣肋部原本 存在之微粒子被㈣,或者自贼紅獅後與二氧化碳一同被 ϋ至過絲外㈣可能性。吾人認驗粒子產生之原因有各式 7可月b疋‘造過濾' 器時過濾器原料物質之一部分以微粒子形 於顧器本身之粒子吸引力(凡得瓦爾力或靜 電專)广成外練子_之情^親象雖在賴或超臨界狀態 之氧化石厌/现通過過渡器時較易發生,但氣體之二氧化碳通過之 際’雖有程度之差異,但囉現象發生之可能性仍存在。 根據此-分析,本案發明人思及在使用麵^之前,藉由使 j化碳流通過麟H之方絲進行賴叙潔淨化。雖考量過 潔裝置等之後,若因應須要進行試運轉則過渡器性 女疋,但因運轉條件的各種限制而使效率地潔淨化有其 、、爭化。ίϊ,無往之想法減,’磁11本身事先完成^ ΐί塔化可有效率地進行。實行過料化之磁器,造成 錢地去除。因此’若將其用於過濾氣 n ii狀態之二氧化碳,便能防止微粒子對被處理體 的巧·沐’發揮期望之過濾性能。 201235118 、依本發明之另一實施態樣,提供一種被處理體之清潔或乾燥 ^法二itb方法包含:過濾器潔淨化步驟,使二氧化碳流通於過濾 =潔淨化該過絲;過遽步驟,使用潔淨化後之該碰器,過 體、㈣或超臨界狀態之二氧化碳;以及被處賴之清潔或 i乞燥,ΐ中至少任—步驟’其使用已被磁之魏體絲體之二 氧化碳藉由加壓或加熱所獲得的超臨界狀態之二氧化碳,或使用 氧化韻由加職加賴獲得的超 ,界狀悲之二氧化碳,或使用已被過濾之超臨界狀態之二氧化碳 來實行此步驟。 [發明之效果] 如上述說明’依本發明,用來過濾被處理體之清潔或乾燥其 中過程中所使用氣體、㈣或超臨界狀態之二氧化碳之 過濾、斋得以有鱗地料化。此外,依本發明,使耻方法可進 行對被處理體之清潔或乾燥。 【實施方式】 以下,參照附圖說明本發明之實施態樣。首先,對應用本發 明之被處理體之清潔、乾燥裝置(以下以處理裝 說明。 1 處理裝置卜具備收納被處理體2之壓力容器…供給二氧 化碳予壓力容器11之供給管線2G、以及排出壓力容器u内 化碳之排放管線30。 々供給管線20,與高壓二氧化碳源12 (以下以高壓以^源12 稱,)連接,具備過濾器13、加熱過濾器13之加熱裝置14、以 及调整供給之高壓二氧化碳的流量之流量調節裝置4〇。流量 裝置40,具有流量計4卜流量調整閥42、以及控制流量調 42之控制裝置43。其中,高壓c〇w|12與流量計41係以配 21相連接;流量計41與流量調整閥42係以配管22相連接·、、*旦 :周整閥42與磁H 13係以配管23相連接;過細13與壓,力= 器11係以配管24相連接。 201235118 - 排放管線30,具備由壓力容器11排放二氧化碳時調節二氧化 '碳流,之流量調整裝置50、以及保壓閥15。流量調整裝置50具 有流量計51、流量調整閥52、以及控制流量調整閥52之控制裝 ^ 53。其中;壓力容器n與流量調整閥52係以配管31連接;流 畺調整閥52與保壓閥15係以配管32連接;保壓閥15與流量計 51係以配官33相連接。而流量計51又與二氧化碳之系統外排放 用之配管34相連接。 —壓力容器11内部保存、收納有半導體晶圓等之被處理體2, 可藉由供給至其内部之二氧化碳以超臨界二氧化碳來清潔或乾 燥、=或^潔並乾燥被處理體2。壓力容器u係具有7.4Mpa (二 氧化碳之臨界壓力)以上之耐壓性的不鏽鋼製容器。 高,源12並未有特別限定,凡能儲存高壓二氧化碳者皆 可。如,壓氣體用缸筒、極低溫容器、液化儲藏槽等習知之物皆 可引為南壓C〇2源12之例。二氧化碳以氣態或液態狀態儲存之情 況下’可於供給管線2〇上設置後述二者中至少其任一;將二氧化 碳升壓至臨界壓力以上之泵浦(加魏置).、或加熱至&界溫 5,上5加熱器(加熱裝置〕17。藉此方式,可將氣態或液態之 二氧化碳轉換為超臨界狀態,且可供給超臨界二氧化碳予壓力容 器11。或者亦可由高壓⑽源12收容二氧化碳,因應須要藉由 泵? t6〒以.升壓而供給至壓力容器11。前者之情況下,加壓或加 巧氣態士液態之二氧化碳,再藉由過濾器I3的過濾,便可獲得超 臨界狀悲=二氧化碳。抑或加壓並加熱氣態或液態之二氧化碳, 再以過濾器13過濾而麟超臨界狀態之二氧化碳。所獲得的超臨 界狀態之二氧化碳被使用於被處理體2之清潔或乾燥。後者之情 況LL過濾气臨界狀態之二氧化碳,並將其直接使用於被處理體2 之/月你或乾無。此等系浦16或加熱器17,可被設置於過遽器13 之-:入側(入口側或下游側),亦可被設置於二次側(出口側或上 游,)。自以上說明可明確得知,將二氧化碳供給至壓力容器n •匕用,^界狀搞二氧化碳來進行清潔或乾燥’而過濾器13中 ' ' >;IL通之二氧化碳可為氣態、液態、超臨界之任一狀態。 201235118 過濾器13將高壓二氧化碳所含之微粒子,或供給管線20(過 濾器13之一次侧)中產生之微粒子去除,來提高清潔或乾燥後之 被處理體2之潔淨度。過濾、器13可使用燒結金屬過遽器或陶瓷過 濾器等’被用於過濾高壓二氧化碳之習知過濾器。關於過濾器13 之例子,可列舉者有GFT03W (商品名’日本精線公司製,氣體 中除粒子性能0_3μιη)、GFD1N (商品名,曰本精線公司製,氣體 中除粒子性能lMin)、UCS-MB-02VR_30HK過渡器(商品名, PURERON JAPAN公司製’氣體中除粒子性能0 〇1μιη)等。基於 使通過過濾器13之高壓二氧化碳的溫度更容易調節之目的,或降 低能量消耗之目的,亦可增設保溫裝置(未圖示)。 加熱裝置14對於過濾器13本體或過濾器13之一次側加熱。 藉此方式,可將去除尚壓二氧化碳中包含之微粒子,或供給管線 20、(過濾器13之一次側)中產生之微粒子之效率提升,而易於維 持被處理體2之潔淨度於高水準。加熱裝置μ無特別限定,只要 ,可加熱過濾器13者即可,如雙重管式熱交換器、電爐、電暖爐 等皆可作為其鮮。加熱裝置14直接裝設於過劾13上之情況 下,基於使通過過濾器13之高壓二氧化碳溫度更容易調節之目 的’或基於降低能制耗之目的,亦可#由上祕溫裝置將加熱 裝置14與過渡器13 —齊保溫。 為正確調節通過過濾、H 13之高壓二氧化碳之溫度,可於過遽 =上併褒溫度測定$(未圖示)。溫度測定器無特別限定,只 則疋通過過濾器13之高壓二氧化碳溫度者即可。溫度測定 =β ; 13内部溫度之裝i ’或_測定外部溫度之裝 ϊ ’ 直接測定通過過滤器13之高壓二氧化碳溫度之裝置。此 其=度測定n亦可為—測定碱器13鄰近配管(配管23或配 i慮器容ΐΐίί ’最好在溫度浙器上覆蓋隔熱材料。 5| ^ ^ 為一内部收納過濾器13之耐壓容器。在過濾 ϊϋ’配管23a自配管23裡分歧而出。配管23貫 慮益谷裔13a並與過濾器13連接。配管23a則未與過濾器134 S 201235118 It is therefore an object of the present invention to provide a method for efficiently purifying a filter for filtering the cleaning or drying of a treated object, at least any of the gases, liquids or gases used in the prior art. Carbon dioxide in a supercritical state. Further, it is an object of the invention to provide a method of cleaning or drying a processed object using such a method. [Technical means for solving the problem], in accordance with the consistent embodiment of the invention, provides a method for filtering the cleaned or dried surface of the object to be treated, at least the gas produced by the company, and the supercritical state of the liquid county. Ϊίί Filter 11 cleansing material. This method involves purifying the filter by passing carbon monoxide through the filter before using the filter to traverse the carcass or supercritical carbon dioxide. The filter is as clean as the above, and is generally used directly? Will make, any problems. However, the inventor of the present invention found that when gas, liquid or carbon dioxide in the three-boundary state circulates in the sulphate, there are still micro-particles originally present in the county ribs (four), or after the thief red lion is smashed to the silk with carbon dioxide. Outside (four) possibility. The reason why we recognize the particle generation is that there is a variety of 7 types of material. When the filter is made, one part of the raw material of the filter is made up of particles in the shape of the particle attraction of the device itself (Wan Valli or Electrostatic). The practice of _ _ 情 ^ 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲Still exists. According to this analysis, the inventor of the present invention thought that before the surface was used, the j-carbon stream was passed through the square wire of Lin H to clean it. After considering the cleaning device, etc., if the test operation is required, the transitional sex girl will be cleaned up, and the efficiency will be cleaned up due to various restrictions on the operating conditions. ϊ ϊ, no idea to reduce, 'Magnetic 11 itself completed in advance ^ ΐί 塔化 can be carried out efficiently. Excessive magnetizers are implemented, causing money to be removed. Therefore, if it is used to filter the carbon dioxide in the gas n ii state, it is possible to prevent the fine particles from exerting the desired filtration performance on the body of the object to be treated. 201235118 According to another embodiment of the present invention, there is provided a cleaning or drying method of a treated object, comprising: a filter cleaning step, allowing carbon dioxide to flow through the filtration = cleaning the filament; Use the cleaned-up bumper, carbon dioxide in the body, (4) or supercritical state; and the cleaned or i-dried, the at least one of the steps - the use of carbon dioxide by the magnetic body of the magnetic body The supercritical carbon dioxide obtained by pressurizing or heating, or the super-existing carbon dioxide obtained by the use of oxidative rhyme, or the carbon dioxide in the supercritical state that has been filtered, is used to carry out this step. [Effects of the Invention] As described above, according to the present invention, it is possible to filter the gas used in the process of cleaning or drying the object to be treated, (4) or the carbon dioxide in the supercritical state, and the scaly material can be scaled. Further, according to the present invention, the shame method can be used to clean or dry the object to be treated. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings. First, the cleaning and drying apparatus to which the object to be processed according to the present invention is applied (hereinafter, the processing apparatus will be described. 1 The processing apparatus includes a pressure vessel for storing the object 2 to be processed, a supply line 2G for supplying carbon dioxide to the pressure vessel 11, and a discharge pressure. The container u internalizes the carbon discharge line 30. The 々 supply line 20 is connected to a high-pressure carbon dioxide source 12 (hereinafter referred to as a high-pressure source 12), and is provided with a filter 13, a heating device 14 for heating the filter 13, and an adjustment supply. The flow rate adjusting device 4 of the high-pressure carbon dioxide flow rate has a flow rate device 40, a flow rate adjusting valve 42 and a control device 43 for controlling the flow rate adjustment 42. The high-pressure c〇w|12 and the flow meter 41 are The 21-phase connection is connected; the flow rate meter 41 and the flow rate adjustment valve 42 are connected by the pipe 22, and *: the circumferential valve 42 and the magnetic H 13 are connected by the pipe 23; the fine 13 and the pressure, the force = 11 201235118 - The discharge line 30 is provided with a flow rate adjusting device 50 for regulating the carbon dioxide flow, and a pressure maintaining valve 15 when the carbon dioxide is discharged from the pressure vessel 11. The flow regulating device 50 has a flow. The gauge 51, the flow rate adjusting valve 52, and the control device 53 for controlling the flow rate adjusting valve 52. The pressure vessel n and the flow rate adjusting valve 52 are connected by a pipe 31, and the flow regulating valve 52 and the pressure maintaining valve 15 are piping. 32 is connected; the pressure maintaining valve 15 and the flow meter 51 are connected to each other by the official 33. The flow meter 51 is connected to the piping 34 for discharging the carbon dioxide outside the system. - The inside of the pressure vessel 11 stores and stores a semiconductor wafer or the like. The object to be treated 2 can be cleaned or dried with supercritical carbon dioxide by carbon dioxide supplied thereto, and the body 2 can be cleaned and dried. The pressure vessel u has a temperature of 7.4 MPa or more (critical pressure of carbon dioxide). High-pressure container with pressure resistance. High, source 12 is not particularly limited. Anyone who can store high-pressure carbon dioxide can be used. For example, cylinders for pressurized gas, cryogenic vessels, liquefied storage tanks, etc. can be cited as Example of the source C of the south pressure C〇2. When carbon dioxide is stored in a gaseous or liquid state, 'at least one of the latter can be provided on the supply line 2〇; the pump that boosts the carbon dioxide to a critical pressure or higher Adding or heating to & boundary temperature 5, upper 5 heater (heating device) 17. In this way, the gaseous or liquid carbon dioxide can be converted into a supercritical state, and the supercritical carbon dioxide can be supplied to the pressure. The container 11 or the high-pressure (10) source 12 may also contain carbon dioxide, and it is required to be supplied to the pressure vessel 11 by the pumping of the pump. In the case of the former, the carbon dioxide of the liquid state is pressurized or added. By the filtration of the filter I3, supercritical sorrow = carbon dioxide can be obtained, or the gaseous or liquid carbon dioxide can be pressurized and heated, and then filtered by the filter 13 to carbon dioxide in the supercritical state. The carbon dioxide obtained in the supercritical state is used for cleaning or drying of the object 2 to be treated. In the latter case, LL filters the carbon dioxide in the critical state of the gas and applies it directly to the treated body 2/month. These pumps 16 or heaters 17 may be provided on the - inlet side (inlet side or downstream side) of the filter 13 or on the secondary side (outlet side or upstream). It can be clearly seen from the above description that the carbon dioxide is supplied to the pressure vessel n, and the carbon dioxide is cleaned or dried in the boundary, and the carbon dioxide in the filter 13 is gaseous and liquid. Any state of supercriticality. 201235118 The filter 13 removes the fine particles contained in the high-pressure carbon dioxide or the fine particles generated in the supply line 20 (the primary side of the filter 13) to improve the cleanliness of the object 2 after cleaning or drying. The filter 13 can use a sintered metal filter or a ceramic filter or the like as a conventional filter for filtering high pressure carbon dioxide. Examples of the filter 13 include GFT03W (trade name 'Nippon Seisaku Co., Ltd., particle performance 0_3μηη in gas), GFD1N (trade name, manufactured by Sakamoto Seiki Co., Ltd., and particle performance lMin in gas), UCS-MB-02VR_30HK transition device (trade name, PURERON JAPAN company's 'gas removal performance 0 〇 1μιη) and so on. A heat retention device (not shown) may be added for the purpose of making the temperature of the high-pressure carbon dioxide passing through the filter 13 easier to adjust or for reducing energy consumption. The heating device 14 heats the primary side of the filter 13 body or filter 13. In this way, the efficiency of removing the fine particles contained in the still-pressed carbon dioxide or the fine particles generated in the supply line 20 (on the primary side of the filter 13) can be improved, and the cleanliness of the treated body 2 can be easily maintained at a high level. The heating device μ is not particularly limited as long as it can heat the filter 13, such as a double tube heat exchanger, an electric furnace, an electric heater, or the like. When the heating device 14 is directly mounted on the weir 13, it is based on the purpose of making the temperature of the high-pressure carbon dioxide passing through the filter 13 easier to adjust or based on the purpose of reducing the energy consumption, or by heating the upper temperature device. The device 14 is insulated from the transition unit 13. In order to properly adjust the temperature of the high-pressure carbon dioxide passing through the filtration and H 13 , the temperature can be measured by over 遽 = 褒 and 褒 (not shown). The temperature measuring device is not particularly limited, and only the high-pressure carbon dioxide temperature of the filter 13 can be passed. Temperature measurement = β; 13 internal temperature installation i 'or _ measuring external temperature installation ϊ ' Directly measure the temperature of the high pressure carbon dioxide passing through the filter 13 . The measurement of the degree n may also be - measuring the alkali tube 13 adjacent to the pipe (the pipe 23 or the device is ΐΐ ίί ' is preferably covered with thermal insulation material on the temperature Zhejiang. 5| ^ ^ is an internal storage filter 13 The pressure-resistant container is branched from the pipe 23 in the filter port 23a. The pipe 23 is connected to the filter 13 and is connected to the filter 13. The pipe 23a is not connected to the filter 13

S 201235118 連接,而係開口於過濾器容器13a之内部。配管24a亦 濾器容器13a内部,配管24a之另一端可排放於大氣。 ° 可藉由過濾器容器13a内部之配管23、24上所設之接頭等 零件(未圖示)’對於過遽器容器13a自由騎。配管23、配^ 24、配管23a、配管24a上分別設有閥25、26、27、28。高壓^ 氧化碳通過配管23流入過濾器13,再經配管24流出供^壓力 容器11。高壓二氧化碳亦可通過配管23a流入到過濾器器 之内部’再經配管24a流出排放至大氣。 ° 依此構成,藉由適當地調節閥25、26、27、28之開閉或開度, 可維持過濾器13之内壓與過濾器13之外壓(過濾器容器13a^ 内壓)的平衡。依此結果,可大幅降低過濾器13本身之淨内壓。 因此,易於防止因過度内壓造成的過濾器13之意外損壞。進一夺 來看,因為無須將過濾、器13視為壓力容器來處理,於法規限制上 的因應可能更容易。此一法規限制的一個例子為日本的高麗<氣體 。因本實施態樣中’ ^^濾'器13在高麵體保安法 、k用對象以外,不受法規限制,故可如後所述為潔淨化而拆下 過渡器13。 •,於裝設流量調整裝置40,精密調節供給至壓力容器I〗之高 壓=氧化碳流量一事更形簡單。流量調整裝置40之流量計41,g 乂月匕’則又液體或超臨界狀態之高壓二氧化碳之質量流量者為佳:、 科式質量流量計(MFM)即可作為這一流量計41之一例。流 ^調整閥42雖無特別限定,只要可隨流量計41之測定值調整^ 【者即可,但仍以盡量使用潔淨度較高者為佳。控制裝置43之P 制,自動或手動皆可,但其流量調整閥42仍以使用可與mpm ^ 測定,連動調整之自動閥為佳。 、 _ β,由裝設流量調整裝置50’精密地調節自壓力容器u排出之 二壓二氧化碳流量一事更形簡單。流量調整裝置5〇的流量計51 用與流量調整裝置40之流量計41相同者,其流量調整^ 52 3 ^使用與流量調整裝置40之流量調整閥42相同者,且其控制裝 •一置53可使用與流量調整裝置4〇之控制裝置43相同者。/、工、 201235118 保壓閥15係為了保持壓力容器11之内壓而設置。例如可使 用以彈簧進行機械式的壓力保持之習用保壓閥來作為保壓閥15。 ,塵閥15雖設在流量計51與流量調整閥52之間,但亦可設在流 量計51之二次側。 机 兹就使用本實施態樣之處理裝置1的被處理體2清潔方法加 以說明。以下處理為,利用以後述方法進行潔淨化後之過據器’13, 來過濾氣體、液體或超臨界狀態之二氧化碳。此處雖省^被處理 體2之乾燥方法之記載,但與清潔之情況基本上並無二致。 首先’將高壓C〇2源12所儲存之高壓二氧化碳供給予供給管 ,20,視須要以泵浦16升壓,並藉由加熱器17加熱,再由流量 調整裝置40—面調整流量一面送至過濾器13。 過濾器13藉由加熱裝置14加熱,溫度以3〇。〇以上為佳,5〇°C =上更佳。藉由加熱過濾器13,使通過過濾器13之高壓二氧化碳 溫度升高,可提升通過過濾器13之高壓二氧化碳内所含微粒子之 去除性能,讓被處理體2更容易維持在高潔淨度。另一方面,若 過濾,13溫度過高,為了確保耐熱性,須增加過濾器13或其鄰 近配管之厚度,處理裝置1容易大型化,且氣密部之密封性亦難 確保。因此’過濾器13之溫度以2〇〇°C以下為佳。 ^3壓二氧化碳由過渡器13所過濾(過濾步驟),其後再被供 給^壓力容器11。壓力容器u内之被處理體2係藉由所供給二氧 化碳之超臨界二氧化碳來清潔。此一步驟,可在停止供給從供給 ^線2〇提供之高屢二氧化碳後,於不進行壓力容器^之二氧化 石反排出動作之狀態下進行(分批式),亦可在將二氧化碳穩定地供 給至壓力容器11的狀態下進行(連續式)。 β ^次,以流量調整裝置50 —面調節二氧化碳之流量,一面將 壓力容11内之二氧化碳自排放管線30排出。保壓閥15可連續 式或階段式地開啟,亦可—次式地開啟。開啟保壓閥15時,流量 調整裝置50之流量調整閱52的開度勿預先開過大,亦應避免讓 流量瞬間過大。 其次’對上述説明之處理裝置1所使用之過濾器13潔淨化方S 201235118 is connected and opens inside the filter container 13a. The pipe 24a is also inside the filter container 13a, and the other end of the pipe 24a is discharged to the atmosphere. ° The rider container 13a can be freely rided by a member (not shown) such as a joint provided on the pipes 23 and 24 inside the filter container 13a. Valves 25, 26, 27, and 28 are provided in the piping 23, the fitting 24, the piping 23a, and the piping 24a, respectively. The high-pressure carbon oxide gas flows into the filter 13 through the pipe 23, and then flows out through the pipe 24 to the pressure vessel 11. The high-pressure carbon dioxide can also flow into the inside of the filter through the pipe 23a, and then discharged to the atmosphere through the pipe 24a. According to this configuration, by appropriately adjusting the opening and closing or opening degree of the valves 25, 26, 27, 28, the balance between the internal pressure of the filter 13 and the external pressure of the filter 13 (the internal pressure of the filter container 13a) can be maintained. . As a result, the net internal pressure of the filter 13 itself can be greatly reduced. Therefore, it is easy to prevent accidental damage of the filter 13 due to excessive internal pressure. Taken a step further, because it is not necessary to treat the filter 13 as a pressure vessel, it may be easier to comply with regulatory restrictions. An example of this regulatory restriction is Japan's Korean < Gas. In the present embodiment, the '^^ filter' 13 is not subject to regulations except for the high-profile security method and the k-use object, so that the transition unit 13 can be removed for cleaning as will be described later. • It is more simple to install the flow rate adjusting device 40 to precisely adjust the high pressure = oxidized carbon flow supplied to the pressure vessel I. The flow meter 41 of the flow regulating device 40, g 乂月匕' then the liquid or supercritical state of the high-pressure carbon dioxide mass flow is better:, the mass flow meter (MFM) can be used as an example of this flow meter 41 . The flow control valve 42 is not particularly limited as long as it can be adjusted with the measured value of the flow meter 41, but it is preferable to use the cleanliness as much as possible. The P of the control device 43 can be either automatic or manual, but the flow regulating valve 42 is preferably an automatic valve that can be adjusted with the mpm ^ and adjusted in conjunction. _β is more simply simplified by the provision of the flow regulating device 50' to precisely adjust the flow of the two-pressure carbon dioxide discharged from the pressure vessel u. The flow rate meter 51 of the flow rate adjusting device 5 is the same as the flow meter 41 of the flow rate adjusting device 40, and the flow rate adjustment is the same as that of the flow rate adjusting valve 42 of the flow rate adjusting device 40, and its control device is provided. 53 can be the same as the control device 43 of the flow rate adjusting device 4〇. /, work, 201235118 The pressure maintaining valve 15 is provided to maintain the internal pressure of the pressure vessel 11. For example, a conventional pressure maintaining valve for mechanically maintaining the pressure of the spring can be used as the pressure maintaining valve 15. Although the dust valve 15 is provided between the flow meter 51 and the flow rate adjusting valve 52, it may be provided on the secondary side of the flow meter 51. The cleaning method of the object 2 to be processed using the processing apparatus 1 of the present embodiment will be explained. The following treatment is to filter the carbon dioxide in a gas, a liquid or a supercritical state by means of a cleaner '13 after being cleaned by a method described later. Here, although the description of the drying method of the treated body 2 is omitted, it is basically the same as the cleaning. First, 'the high-pressure carbon dioxide stored in the high-pressure C〇2 source 12 is supplied to the supply pipe, 20, if necessary, to be boosted by the pump 16, and heated by the heater 17, and then flow-adjusted by the flow regulating device 40. To the filter 13. The filter 13 is heated by a heating device 14 at a temperature of 3 Torr. 〇 Above is better, 5〇 °C = better. By heating the filter 13, the temperature of the high-pressure carbon dioxide passing through the filter 13 is raised, and the removal performance of the fine particles contained in the high-pressure carbon dioxide passing through the filter 13 can be improved, and the object to be treated 2 can be more easily maintained at a high cleanliness. On the other hand, if the temperature is too high, 13 is too high, and in order to ensure heat resistance, the thickness of the filter 13 or its adjacent piping must be increased, the processing apparatus 1 can be easily enlarged, and the sealing property of the airtight portion can be difficult to ensure. Therefore, the temperature of the filter 13 is preferably 2 〇〇 ° C or less. The ^3 pressure carbon dioxide is filtered by the reactor 13 (filtration step), and thereafter supplied to the pressure vessel 11. The object to be treated 2 in the pressure vessel u is cleaned by supercritical carbon dioxide supplied with carbon dioxide. In this step, after the supply of the high carbon dioxide supplied from the supply line 2 is stopped, the carbon dioxide can be discharged in a state where the pressure vessel is not discharged (batch type), and the carbon dioxide can be stabilized. The ground is supplied to the pressure vessel 11 (continuous). The gas in the pressure capacity 11 is discharged from the discharge line 30 while the flow rate adjusting device 50 adjusts the flow rate of the carbon dioxide by β. The pressure maintaining valve 15 can be opened continuously or in stages, or can be opened in a sub-type. When the pressure maintaining valve 15 is opened, the opening degree of the flow rate adjusting device 50 of the flow rate adjusting device 50 is not excessively opened in advance, and the flow rate should be prevented from being excessively large. Next, the filter 13 used in the processing apparatus 1 described above is cleaned.

10 S 201235118 .Ϊ ifi慮器潔淨化f驟)之一例進行說明。圖2係為使用於過遽 • 化裝置61之概略構造圖。作為潔“An example of 10 S 201235118 .Ϊ ifi cleaner cleaning f). Fig. 2 is a schematic configuration diagram of the apparatus 61 used in the past. As clean

Jtiii 中之過滤器13相同)係收納於_器容 於 之顧、1113的制歷獅未加以限定, 實施例同為未使用過即新品過濾11的情況,可以獲 過滤器容器13b與處理裝置1中之猶器容器 為同樣之谷器。過遽器容器別與過遽器容器以相同,係連 ^ ·和^慮器13連接之配管7卜72、自配管71分出之分歧配 以rf可排放至大氣中之配管74。另外,與過濾'器容器13a 之情況相同,配管71〜74上設有閥75〜78。因此,藉由調整此 上開閉或開度,可使過滤器13之内壓與過渡器13之外 ^器13b之關)達到平衡狀態。過滤器13與過滤器 =器13a之情況相同’藉由以接頭等適當裝置與配管71巧2連結, 二過遽器容器13b安裝拆卸。依這樣的構成,除了可防止 、濾益1^、外損壞外,在法規限制上的因應也更加簡單。 六„C〇2谷态62裡儲存氣態或液態之高壓二氧化碳。視須要自CO 供給二氧化碳,與再循環之氣態二氧化碳—起,先由 ΐ凝Ϊ f化為液態後’再儲存於貯槽64。貯槽64中儲存之液 石:係藉由泵浦65升壓’以^^濾器66過濾之’而後流入 至過遽器13外部。在此同時,二氧化碳會將過濾器13 μΙΪ子f之微粒子帶出,往過濾器13外部排放。被過濾器13 /·心t一氧化碳’由蒸發器68加以氣化,以過濾器69過濾之, 态63中與視須要而由c〇2容器幻供給之二氧化碳合流。 匕濾态66與。過濾器69,視狀況不同可以省略其中一方或者雙方。 士過气、器I3中流通之二氧化碳,雖可為氣態、液態、超臨界 扣二狀i 以液體或超臨界狀態之二氧化碳為較佳。液體或 、::1 f悲之二氧化碳比氣體之二氧化碳擁有較高的密度,對過 •效果較好。且高密度之二氧化碳搬運微粒子之能力 ••心又回,過濾裔内部之微粒子能被有效率地排出。特別是超臨界狀 11 201235118 態:流體的表面張力為零,因二氧化碳的擴散性提高,故無論過 滤器^3之微二細孔有多細小多複雜,二氧化碳也能深入微細孔之各 個角落’提南清潔效果。欲使二氧化碳達到超臨界狀態, 將二氧化碳以泵浦65升壓至7.4Mpa (二氧化碳之臨界壓力)曰以 i過Ϊ!未圖示之加熱器加熱至31。〇以上(二氧化碳之臨界溫度) 在過濾器13中流通之二氧化碳以壓力較高者為佳,具體而言 上者為佳。因1Mpa社之二氧化碳密度較高,故將^ ,义濾、益13上的微粒子帶出之效果佳,可提升過遽、器之潔淨化 外’若二氧化碳之壓力高,則可提高過綠13前後之差 堅(ΔΡ)。因差壓與流量成比例,故差壓越高可以使所流通之二氧 i匕,ΐ升潔淨化之效率。進—步,因為藉由增加流量 ,使所之—氧化碳流速提高’故能以高流速進行處理,將附 者f過Ϊ器、13上微粒子有效率地去除。因為使高流量、高流速之 一軋化碳流通,而能縮短清潔時間。 俨ίίϊ態?5使在過濾器13流通過之二氧化碳的全量再猶 ί π二'畜過^ 2中流通。再循環之二氧化碳亦可僅為在過遽 氧化碳之一部分。藉由二氧化碳的循環使用, 綠獅编恤量,進而可期 69 再倾之狀況下,再循環之二氧化韻由過遽器 仅絲絲更上—層。由過魅69過滤之 -氧化奴可為再魏二氧化碳之全量,亦可為其巾一部分。 广再循環之二氧化碳藉由過遽器69 _前,流經過滤器13之 ίϊίΐϊΐ由蒸發器68使其氣化。—般而言,與過體或超 5下抛,麵航體之情況,過絲的除粒子性 ’藉由將再循環二氧化碳錢態磁的方式,二氧 潔淨度會提高,_器丨3的潔淨化 過遽器13之二氧化碳為液體或超臨界狀態3,】 好先由蒸發器68予以氣化後,再以過濾器69過滤之。所氣jThe filter 13 in Jtiii is the same) and is not limited to the lion that is accommodated in the container. The embodiment is the same as the case where the new product 11 is not used, and the filter container 13b and the processing device can be obtained. The container of the sigma in 1 is the same grain. The damper vessel is not the same as the damper vessel, and is connected to the piping 7 connected to the vessel 13 and branched from the piping 71 to be distributed to the piping 74 in the atmosphere by rf. Further, similarly to the case of filtering the container 13a, the pipes 71 to 74 are provided with valves 75 to 78. Therefore, by adjusting the upper opening and closing or opening degree, the internal pressure of the filter 13 can be brought to an equilibrium with the regulator 13b. The filter 13 is the same as the case of the filter = 13a. The second filter container 13b is attached and detached by being connected to the pipe 71 by a suitable device such as a joint. According to this configuration, in addition to preventing, filtering, and external damage, the response to regulatory restrictions is also simpler. The six „C〇2 valley state 62 stores high-pressure carbon dioxide in a gaseous or liquid state. It is necessary to supply carbon dioxide from the CO, and the gaseous carbon dioxide to be recycled, firstly converted into a liquid state by the condensate ', and then stored in the storage tank 64. The liquid stone stored in the sump 64 is filtered by the pump 65 to 'filtered by the filter 66' and then flows into the outside of the damper 13. At the same time, the carbon dioxide will filter the microparticles of the filter 13 μ f Out, it is discharged to the outside of the filter 13. The filter 13 / · heart t carbon monoxide ' is vaporized by the evaporator 68, filtered by the filter 69, and the carbon dioxide is supplied by the c〇2 container as needed. Confluence 66. Filter 69, depending on the condition, one or both of them may be omitted. The carbon dioxide circulating in the gas and the I3 may be gaseous, liquid, supercritical, or Carbon dioxide in a critical state is preferred. Liquid or:: 1 f carbon dioxide has a higher density than gas carbon dioxide, has a better effect on the effect of high-density carbon dioxide, and the ability to transport fine particles. Over The internal microparticles can be efficiently discharged. Especially the supercritical shape 11 201235118 State: The surface tension of the fluid is zero, and the diffusion of carbon dioxide is improved, so no matter how small or complex the micropores of the filter ^3 are. Carbon dioxide can also penetrate into the corners of the micro-holes to improve the cleaning effect. To make the carbon dioxide reach the supercritical state, the carbon dioxide is boosted by pump 65 to 7.4Mpa (the critical pressure of carbon dioxide). The heater is heated to 31. Above (the critical temperature of carbon dioxide), the carbon dioxide flowing in the filter 13 is preferably higher in pressure, and the above is preferable. Since the density of carbon dioxide in 1Mpa is high, ^, the effect of the fine particles on the Yi filter and the benefit 13 is good, which can improve the cleanliness of the sputum and the device. If the pressure of the carbon dioxide is high, the difference between the green and the green can be improved (ΔΡ). It is proportional to the flow rate, so the higher the differential pressure, the higher the efficiency of the dioxin, which is circulated, and the higher the efficiency of the oxidized carbon, because the flow rate is increased by increasing the flow rate. The flow rate is processed to remove the particles from the hopper and the neutrons 13 efficiently. The cleaning time can be shortened because one of the high flow rate and the high flow rate is rolled, and the cleaning time can be shortened. 俨ίίϊ?5 in the filter 13 The total amount of carbon dioxide flowing through the stream is then circulated. The recycled carbon dioxide can only be part of the carbon monoxide. By recycling carbon dioxide, the green lion can be woven. Period 69 Under the condition of re-dipping, the recycling of the oxidized rhyme from the sputum is only the upper layer of the silk. The filter is filtered by the enchantment 69 - the oxidized slave can be the full amount of the carbon dioxide, and it can also be part of the towel. The widely recycled carbon dioxide is vaporized by the evaporator 68 through the filter 69 before passing through the filter 69 _. In general, with the over- or over-5 throwing, in the case of the surface body, the particle-removing property of the wire is improved by the way of recycling the carbon dioxide in the form of carbon dioxide, _ 丨 丨 3 The carbon dioxide of the cleaned filter 13 is liquid or supercritical state 3, which is first vaporized by the evaporator 68, and then filtered by the filter 69. Gas j

S 12 201235118 再^二氧化碳之全量’亦可為其中—部分。另外, 過程中較少有微粒子軸之緣故,對贼㈣之 外。蒸發㈣之前方設置促使二氧化碳液、, 由將二氧化碳冷卻的方式,將二氧化碳更碟實地液/匕夢、二Ϊ =匕之,氧化碳到蒸發㈣的方式,蒸發器68 液界面、,:以使二氧化碳由界_定地蒸發。 會/成耽 過遽器潔淨化步驟中,宜以較過齡 g ,下之實際的體積流量)更高的流J,( J = 子。特別是,以比過齡驟更高之 中,微粒子自顧_的可能低流1之過濾、步驟 ,滤器潔淨化步财,宜使較猶步驟高溫之 在’二般而言’因越高溫時自過渡器溶出溶出二ϊ 驟中,使溶出物自過濾、器排出的可能性皿的,慮步 =時潔淨化效果雖會提高,但在同二壓 可以提供高密度之二Li氧化犧在高_方式,仍 之微實雜態,可抑_著在過渡器上 高得潔淨度遠 • 實施例 :準備日本精線公司製之新品過遽器(NASdeanGF·),在 13 201235118 Ξ二上濾器,以超臨界二氧化碳實行潔淨化。 66 > ρθ 2置土本上”圖2所不裝置相同,惟於泵浦65及過滹芎 之間再加設加熱H 7G”X缝紅筒做為咖容器 淨化與Π0、3i?_ C”之條件導入二氧化碳,實行6小時潔 淨匕^外,關-過渡器,準備不實行潔淨化之比較例。 二-人’如圖3B所示,在裝置有約15观(6时)的潔淨 了f量流量2Gg·c〇2/min速度導人由過渡器曰 L =的二氧化碳。測定晶圓上粒徑大於〇>之微粒子個 圓為0個’比較例所用之晶圓為3個,兩者 i 果程度之高潔淨度。以電氣加熱器18a加 ^部ΐ度4G°C。壓力容器11由溫水設定⑻。C之溫 θ 在此狀態下導入二氧化碳,可獲得壓力 刭、拿:J^50〜55C之超臨界二氧化碳。於壓力容器11内部一 接溫ΐ狀態後即減壓至大_力,取出晶圓。減壓 Ϊ 量調賴19全閉讀,在不使壓力容器11 以=二? Υ之情況下’將保壓閥15緩緩開啟。晶圓保 之Ε體中,數日後以異物粒子檢查裝置(T0PC0N製, 图玄命)測定晶圓上粒控大於0.5μιη之微粒子數目。此時,晶圓外 ==之购在聰伽。細_之咖實 心條件處理後之晶13上的微粒子數目如表1所示。藉 化’以二氧化碳進行清潔後的晶圓上之微粒子數 過1μιη之微粒子幾乎全被去除。推測此原 且i f為一般而吕越大之微粒子越容易去除之故。吾人認為:加 ^淨化時間則過㈣之潔淨度可更提昇,較小粒徑之微粒子在 日日圓上之附著狀況亦可被抑制。 [表1] 粒徑 0.5 〜lum ^ lium 〉0 5um 清潔後(貫施例) 400 1 401 新品(比較例) 422 171 593 201235118 【圖式簡單說明】 圖1係說明應用本發明之被處理體之清潔、乾燥裝置之概略 構造圖。 圖2係依本發明之過濾器的潔淨化裝置之概略構造圖。 圖3A係實施例所使用裝置之概略構造圖。 圖3B係實施例所使用裝置之概略構造圖。 【主要元件符號說明】 1處理裝置 2被處理體 11壓力容器 12 高壓C02源 13過濾器 13a、13b過濾器容器 14加熱裝置 15保壓閥 16泵浦 17加熱器 18a電氣加熱器 19流量調整閥 20供給管線 21 〜24、23a、24a 配管 25〜28 閥 30排放管線 31〜34 配管 40、 50流量調整裝置 41、 51 流量計 42、 52流量調整閥 43、 53控制裝置 15 201235118 61過濾器潔淨化裝置 62 C02容器 63 凝縮器冷凝器 64貯槽 65泵浦 66過濾器 68蒸發器 70過濾器 71〜74 配管 75〜78 閥S 12 201235118 The total amount of carbon dioxide can also be part of it. In addition, there are fewer particle spines in the process, outside the thief (four). Evaporation (4) before the setting to promote the carbon dioxide liquid, by means of cooling the carbon dioxide, the carbon dioxide is more liquid to the liquid / nightmare, two Ϊ = 匕, carbon oxide to evaporation (four), the evaporator 68 liquid interface,: The carbon dioxide is evaporated from the boundary. In the cleansing step of the / 耽 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The micro-particles self-consideration _ the possible low-flow 1 filtration, the steps, the filter cleansing step, the higher the temperature of the step is to be in the 'two general', because the higher the temperature, the dissolution of the transition from the transition vessel, so that the dissolution The possibility of self-filtering and discharge of the device, although the cleaning effect will be improved, but in the same two pressure can provide high density of the second dialysis of the oxidation in the high _ mode, still slightly micro-hybrid, _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ ; ρθ 2 is placed on the soil. The same equipment is not shown in Figure 2. Only the heating H 7G is added between the pump 65 and the raft. X-seam red cylinder is used as the coffee container for purification and Π0, 3i?_ C" The conditions for the introduction of carbon dioxide, the implementation of 6 hours of clean 匕 ^ outside, off - transition, ready to not clean comparison The second-person's as shown in Fig. 3B, the device has about 15 (6 o'clock) cleaned f flow rate 2Gg · c 〇 2 / min speed guided by the transition 曰 L = carbon dioxide. The number of particles having a particle diameter larger than 〇> is 0. The number of wafers used in the comparative example is 3. The degree of cleanliness is high. The electric heater 18a is added with a degree of 4 G ° C. The pressure vessel 11 is set by warm water (8). Temperature θ of C. In this state, carbon dioxide is introduced, and pressure 刭 can be obtained, and supercritical carbon dioxide of J^50~55C can be obtained. After the temperature inside the pressure vessel 11 is connected, the pressure is reduced to Large _ force, take out the wafer. The decompression 调 quantity is adjusted to 19 full read, and the pressure-retaining valve 15 is slowly opened without the pressure vessel 11 being = 2 。. After a few days, the number of particles with a grain size greater than 0.5 μm on the wafer was measured by a foreign particle inspection device (made by T0PC0N, Fig. Xuanming). At this time, the out-of-wafer == purchase was processed in Congjia. The number of fine particles on the crystal 13 is shown in Table 1. The number of particles on the wafer after cleaning with carbon dioxide is over 1 The microparticles of ιη are almost completely removed. It is speculated that the original and if is the general and the larger the granules, the easier it is to remove. I think that the purification time is better (4), the cleanliness can be improved, and the smaller particle size The adhesion on the Japanese yen can also be suppressed. [Table 1] Particle size 0.5 ~ lum ^ lium 〉 0 5um After cleaning (continuous application) 400 1 401 New product (Comparative example) 422 171 593 201235118 [Simple description Fig. 1 is a schematic structural view showing a cleaning and drying apparatus to which a target object of the present invention is applied. Fig. 2 is a schematic structural view showing a cleaning device for a filter according to the present invention. Fig. 3A is a schematic configuration diagram of an apparatus used in the embodiment. Fig. 3B is a schematic configuration diagram of the apparatus used in the embodiment. [Main component symbol description] 1 Processing device 2 Object to be processed 11 Pressure vessel 12 High pressure C02 Source 13 Filter 13a, 13b Filter container 14 Heating device 15 Pressure maintaining valve 16 Pump 17 Heater 18a Electric heater 19 Flow regulating valve 20 supply lines 21 to 24, 23a, 24a, pipes 25 to 28, valve 30 discharge lines 31 to 34, pipes 40, 50 flow rate adjusting devices 41, 51 flow meters 42, 52 flow rate adjusting valves 43, 53 control devices 15 201235118 61 filter cleaning Chemical unit 62 C02 container 63 Condenser condenser 64 Storage tank 65 Pump 66 Filter 68 Evaporator 70 Filter 71~74 Piping 75~78 Valve

16 S16 S

Claims (1)

201235118 七、申請專利範圍: ’ 1過濾ϋ之潔雜方法,麵濾來過銳處理體之清潔 J乾燥過程至少其中任-過財所使_氣體、液體或超臨界狀 態之二氧化碳,其特徵為: 义^以該過濾器過濾該氣體、液體或超臨界狀態之二氧化碳之 前,藉由使二氧化碳流通於該過濾器來潔淨化該過濾器。 2、 如申請專利範圍第1項之過濾器之潔淨化方法,其中, 該過濾器為未使用之過遽器。 3、 如申請專利範圍第1項之過濾器之潔淨化方法,其中, 流通於該過濾器之二氧化碳為液體或超臨界狀態之二氧化· 碳。 4、 如申請專利範圍第1項之過濾器之潔淨化方法,其中, 使流通過該過濾器之二氧化碳中之至少一部分再度於該過濾 器中流通。 5、 如申請專利範圍第4項之過濾器之潔淨化方法,其中, 於將流通過該過據器之二氧化碳中之至少一部分過遽之後, 再度使其流通於該過濾器。 6、 如申請專利範圍第5項之過濾器之潔淨化方法,其中, 於將流通過該過濾器之二氧化碳中之至少一部分過濾之前, 先使流通過該過濾器之二氧化碳裡之至少一部分氣化。 7、 如申請專利範圍第6項之過濾器之潔淨化方法,更包含: 將流通過該過濾器之二氧化碳中之至少一部分以蒸發器使其 . 氣化。 17 201235118 8、 一種被處理體之清潔或乾燥方法,包含: 過遽器潔淨化步驟’使一氧化碳流通於過渡器以潔淨化該過 滤器; 過濾步驟,使用潔淨化後之該過濾器,過遽氣體、液體或超 臨界狀態之二氧化碳;以及 被處理體之清潔或乾燥兩者中至少任一步驟,其使用已被過 滤之該氣體或液體之一氧化奴藉由加壓或加敎所興得的赶臨界狀 態之二氧化碳’或使用已被磁之該氣體^體之二氧化碳藉由 加壓並加熱所獲得的超臨界狀態之二氧化峻,或使用已被 超臨界狀態之二氧化碳來實行此步驟。 9、 如申請專利範圍第8項之被處理體之清潔或乾燥方法, ,過^潔淨化步驟中流通於該過― 碳之中 縣步驟中流通於該期的二氧t炭Ϊ錳 在該慮器潔淨化步驟中流通於t亥過遽器二^再中, ,比在該過渡步驟中流通於該過渡器内^二氧化2=^。 1〇、第S被處理體之清潔或乾燥方法,其中 度 八、圖式: 18201235118 VII, the scope of application for patents: '1 filter ϋ 洁 洁 , , , , , , , , 面 面 J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J : Before filtering the gas, liquid or supercritical carbon dioxide with the filter, the filter is cleaned by circulating carbon dioxide to the filter. 2. The cleaning method of the filter of claim 1, wherein the filter is an unused filter. 3. The method of cleaning a filter according to the first aspect of the invention, wherein the carbon dioxide flowing through the filter is a liquid or supercritical state of carbon dioxide. 4. The method of cleaning a filter of claim 1, wherein at least a portion of the carbon dioxide flowing through the filter is circulated again in the filter. 5. The method of cleaning a filter of claim 4, wherein at least a portion of the carbon dioxide flowing through the passer is passed through the filter. 6. The method of cleaning a filter of claim 5, wherein at least a portion of the carbon dioxide flowing through the filter is vaporized prior to filtering at least a portion of the carbon dioxide flowing through the filter. . 7. The method of cleaning a filter according to claim 6, further comprising: vaporizing at least a portion of the carbon dioxide flowing through the filter with an evaporator. 17 201235118 8. A method for cleaning or drying a treated object, comprising: a filter cleaning step of “passing carbon monoxide through a transition device to clean the filter; and a filtering step using the cleaned filter, At least any one of gas, liquid or supercritical carbon dioxide; and cleaning or drying of the treated body, which is obtained by pressurizing or twisting one of the gas or liquid that has been filtered The carbon dioxide in a critical state is either a disulfide state obtained by pressurizing and heating the carbon dioxide of the gas which has been magnetized, or a carbon dioxide having a supercritical state is used to carry out this step. 9. The method of cleaning or drying the object to be treated according to item 8 of the patent application, wherein the dioxin in the period of the cleaning process is circulated in the period of the carbon-carbon phase In the cleaning step of the device, the gas is passed through the reactor, and is circulated in the transition device in the transition step. 1〇, the method of cleaning or drying the S-processed object, wherein degree VIII, schema: 18
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TWI714008B (en) * 2018-05-28 2020-12-21 日商長瀨過濾器股份有限公司 Filter cleaning method and filter cleaning device
US11219930B2 (en) 2018-05-28 2022-01-11 Nagase Filter Co, Ltd. Filter cleaning method and filter cleaning apparatus
CN115540527A (en) * 2022-09-29 2022-12-30 浙江大学 Supercritical fluid drying system and drying method

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JP2006528553A (en) * 2003-05-13 2006-12-21 イーケーシー テクノロジー,インコーポレイティド Workpiece cleaning system and method using supercritical carbon dioxide
JP2008066495A (en) * 2006-09-07 2008-03-21 Dainippon Screen Mfg Co Ltd High-pressure processing apparatus, and high-pressure processing method

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Publication number Priority date Publication date Assignee Title
TWI714008B (en) * 2018-05-28 2020-12-21 日商長瀨過濾器股份有限公司 Filter cleaning method and filter cleaning device
US11219930B2 (en) 2018-05-28 2022-01-11 Nagase Filter Co, Ltd. Filter cleaning method and filter cleaning apparatus
CN115540527A (en) * 2022-09-29 2022-12-30 浙江大学 Supercritical fluid drying system and drying method
CN115540527B (en) * 2022-09-29 2024-02-27 浙江大学 Supercritical fluid drying system and drying method

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