TW201231220A - Chemical mechanical polishing method - Google Patents

Abstract

This invention provides a chemical mechanical polishing method, in which a specific polishing pad and specific chemical mechanical polishing aqueous dispersion are used for chemical mechanical polishing, capable of achieving a more excellent performance (high polishing speed, high planarization, and scratch inhibition, etc) than ever before. The chemical mechanical polishing method of this invention is to fix the polishing pad on the pressing disk, and to supply the chemical mechanical polishing aqueous dispersion onto the polishing layer of the polishing pad while the semiconductor substrate is brought to contact with the polishing layer. This invention is characterized in that the chemical mechanical polishing aqueous dispersion contains (A) silicon dioxide particles of which the ratio (Rmax/Rmin) of long diameter (Rmax) to short diameter (Rmin) is higher than 1.1 and lower than 1.5, and (B) compounds with two or more carboxyl groups. The surface roughness (Ra) of the polishing layer is in the range between 1μm and 10μm.

Description

201231220 VI. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a chemical mechanical honing method. [Prior Art] In recent years, with the increase in the degree of integration of semiconductor devices or multilayer wiring, etc., the memory capacity of the memory has been rapidly increased. The department supports the advances in microfabrication technology in recent years. However, although the microfabrication technology has progressed, the wafer size has become large, and the number of steps accompanying the miniaturization has also increased, resulting in high cost of the wafer. In this case, attention has been paid to the introduction of chemical mechanical honing technology in the flattening of a processed film. By applying this chemical mechanical honing technique, microfabrication techniques such as planarization are embodied. As for this microfabrication technique, a so-called STI technique such as Shallow Trench Isolation (Shallow Trench Isolation) is known. The STI technology utilizes chemical mechanical honing to remove excess insulating film from the wafer substrate. For example, Patent Document 1 and Patent Document 2 disclose that by using a water-based dispersion using cerium oxide as a honing granule in the chemical mechanical honing step of STI, the honing speed is accelerated, and the honing scar is less honed. surface. Further, the flattening of the front metallization insulating film (PMD) and the interlayer insulating film (ILD) is also performed by chemical mechanical honing. In general, a chemical mechanical honing system holds a honing object by a member called a carrier, fixes it on a pressure plate, and presses it against the honing pad, while allowing the chemical mechanical honing water-based dispersion to flow down onto the honing pad, while borrowing It is honed by a relative motion. That is, chemical mechanical honing is a honing pad used in honing or a microfabrication technique in which various factors such as a chemical mechanical honing water dispersion and a control technology of a device are closely related to each other. To date, various technologies have been proposed for various key technologies such as honing pads or chemical mechanical honing water dispersions. [PRIOR ART DOCUMENT] [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei No. Hei 9-A No. Hei. [Problem] However, in the chemical mechanical honing technique in which the STI insulating film, the front metallized insulating film, the interlayer insulating film, and the like are planarized, in order to prevent the honing speed from being lowered, the planarization can be further improved, and the occurrence of scratches can be suppressed. , the development of various key technologies alone has its boundaries. Therefore, in order to solve the above problems, several aspects of the present invention provide a chemical mechanical honing by using a specific honing pad and a specific chemical mechanical honing water dispersion, thereby achieving more than ever A chemical mechanical honing method with excellent performance (high honing speed, high flattening, scratch suppression, etc.). [Means for Solving the Problem] The present invention has been made to solve at least a part of the above problems, and can be realized by the following aspects or application examples. [Application Example 1] In the chemical mechanical honing method of the present invention, the honing pad is fixed to the platen, and the chemical mechanical honing water-based dispersion is supplied to the honing layer of the honing pad to make the semiconductor. A chemical mechanical honing method in which a substrate is in contact with the honing layer and honed, characterized in that the chemical mechanical honing water-based dispersion comprises (A) a ratio of a long diameter (Rmax) to a short diameter (Rmin) (Rmax/Rmin) The cerium oxide particles of 1.1 or more and 1.5 or less and (B) the compound having two or more carboxyl groups, the surface roughness (Ra) of the honing layer is in the range of Ιμηη or more and ΙΟμηη. [Application Example 2] The chemical mechanical honing method according to Application Example 1, wherein the honing layer of the honing pad has a Duro D hardness of 50 D or more and 80 D or less. [Application Example 3] The chemical mechanical honing method according to Application Example 1 or Application Example 2, wherein the surface hardness of the honing pad of the honing pad after immersion in water at 23 ° C for 4 hours is 2 N / mm 2 or more And 10 N / m m2 or less. [Application Example 4] The chemical mechanical honing method according to any one of Application Examples 1 to 3, wherein the above-mentioned (A) cerium oxide particles contained in the above-mentioned chemical mechanical honing water-based dispersion have an average primary particle The diameter is 0.01 μm or more and 0.1 μηι or less, and the average secondary particle diameter is 0·02 μmη or more and 0.3 μηι or less. [Application Example 5] The chemical mechanical honing method according to any one of Application Examples 1 to 4, wherein the chemical mechanical honing aqueous dispersion is measured and calculated by a dynamic light scattering type particle size distribution measuring apparatus It is a range of 4 μm or more and 0.5 μmη or less. [Application Example 6] The chemical mechanical honing method according to any one of Application Examples 1 to 5, wherein the chemical mechanical honing aqueous dispersion is measured by a dynamic light scattering type particle size distribution measuring device , showing that the particle diameter (Db) of the highest detection frequency (Fb) is 35 nm < DbS 90 nm, the particle diameter (Da) is 90 nm < the ratio of the detection frequency (Fa) in the range of DaS 100 nm to the aforementioned detection frequency (Fb) (Fa/Fb) is 0.5 or less. [Application Example 7] The chemical mechanical honing method according to any one of Application Examples 1 to 6, wherein the content of the (A) cerium oxide particles contained in the aqueous dispersion of the chemical mechanical honing is 0.1 mass . /〇 is above 20% by mass. [Claim 8] The chemical mechanical honing method according to any one of Application Examples 1 to 7, wherein the compound (B) is oxalic acid, malonic acid, tartaric acid, glutaric acid, malic acid, citric acid, and the like. At least one of maleic acid is selected. [Application Example 9] The chemical mechanical honing method according to any one of Application Examples 1 to 8, wherein the chemical mechanical honing aqueous dispersion further contains (C) a water-soluble polymer [Application Example 1] The chemical mechanical honing method according to any one of the first to fifth aspects, wherein the chemical mechanical honing aqueous dispersion further contains (D) an oxidizing agent. [Effect of the Invention] According to the chemical mechanical honing method of the present invention, chemical mechanical honing can be achieved by using a specific honing pad and a specific chemical mechanical honing water-based dispersion to achieve superior performance than before ( High honing speed, high flattening, scratch suppression, etc.). [Embodiment] Hereinafter, preferred embodiments of the present invention will be described in detail. Further, the present invention is not limited to the embodiments described below, and includes various modifications made without departing from the spirit of the present invention -9-201231220. 1. Chemical mechanical honing method The chemical mechanical honing method of the present embodiment is to fix a honing pad to a platen, and supply a chemical mechanical honing water-based dispersion to the honing layer of the honing pad to form a semiconductor. A chemical mechanical honing method in which the substrate is in contact with the honing layer and honed, characterized in that the chemical mechanical honing water-based dispersion comprises (A) a ratio of a long diameter (Rmax) to a short diameter (Rmin) (Rmax/Rmin) The silica sand particles of 1.1 or more and 1.5 or less and (B) the compound having two or more carboxyl groups, the surface roughness (Ra ) of the honing layer of the honing pad is in the range of 1 μm or more and 1 Ομηη or less. Hereinafter, the chemical mechanical honing water-based dispersion, the honing pad, and the honing device used in the chemical mechanical honing method of the present embodiment will be described in order. 1.1. Chemical mechanical honing water-based dispersion The chemical mechanical honing water-based dispersion used in the present embodiment contains a ratio (Rmax/Rmin) of a long diameter (Rmax) to a short diameter (Rmin) of 1.1 or more. 1.5 or less of cerium oxide particles and (B) a compound having two or more carboxyl groups. Hereinafter, each component of (A) to (D) may be omitted as "(A) component" or the like. 1.1.1. (A) cerium oxide particles (A) The cerium oxide particles are components of a honed surface such as a mechanical honing insulating film. The (A) cerium oxide particles are exemplified by, for example, a fumed cerium oxide synthesized by a smoking method in which a ruthenium chloride, an aluminum chloride, a titanium chloride or the like is reacted with oxygen and hydrogen in the gas phase at -10-201231220; A cerium oxide particle synthesized by a sol-gel method synthesized by hydrolysis and condensation of a metal alkoxide; a colloidal cerium oxide particle synthesized by an inorganic colloid method obtained by purifying impurities to remove impurities. Among these, colloidal cerium oxide particles are preferred from the viewpoint of excellent dispersion stability, easy control of the particle diameter, and easy suppression of scratches due to coarse particles. The shape of the (A) cerium oxide particles is preferably spherical. Here, the spherical shape includes a slightly spherical shape having no acute angle portion, and does not necessarily have to be close to a true sphere, and may be an elliptical spherical shape. By using the spherical (A) oxidized particles, not only the honing speed can be sufficiently honed, but also the occurrence of scratches and the like in the honed surface can be suppressed. The average primary particle diameter of the (A) cerium oxide particles is preferably from 〇1 to 0.1 μηη, more preferably from 0.01 to 0.08 μηι, most preferably from 〇.〇1 5 to 0.07 μηη. As long as it is a (cerium) cerium oxide particle having an average primary particle diameter in the above range, a sufficient honing speed can be obtained, and a chemical mechanical honing water-based dispersion excellent in stability without particle sedimentation and separation can be obtained. Therefore, good performance can be achieved. Further, the average primary particle diameter of the (cerium) cerium oxide particles can be obtained by partially drying a part of the dispersion of the oxidized government particles as a raw material, for example, a flow type specific surface area automatic measuring device (manufactured by Shimadzu Corporation) "Micrometries FlowSorb II 23 00"), the specific surface area was measured by the BET method, and was calculated from the measurement 値. The average secondary particle diameter of the (A) cerium oxide particles is preferably 〇. 〇 2 to 0.3 -11 - 201231220 μιη, more preferably 0.02 to 0.2 μηι, more preferably 0.03 to 0·1 μιη. As long as it is a (cerium) cerium oxide particle having an average secondary particle diameter in the above range, a sufficient honing speed can be obtained, and at the same time, a chemical mechanical honing water dispersion which is excellent in stability without particle sedimentation and separation can be obtained. Body, so good performance can be achieved. Here, "secondary particle" means a state in which primary particles are aggregated to a meeting. (A) The cerium oxide particles are usually present in the state of secondary particles in the chemical mechanical honing water-based dispersion. Further, the average secondary particle diameter of the (A) cerium oxide particles can be determined by using a transmission electron microscope to observe a part of the dispersion of the cerium oxide particles as a raw material and agglomerating to the individual particles to be combined, thereby obtaining a particle diameter, and These are averaged and obtained. The ratio (Rmax/Rmin) of the major axis (Rmax) to the minor axis (Rmin) of the cerium oxide particles (A) is 1.1 or more and 1.5 or less, preferably 1.1 or more and 1.4 or less, more preferably 1.1 or more and 1.3 or less. The honing pad used in the present embodiment has fine irregularities (hereinafter also referred to as "recesses") having an appropriate size on the surface of the honing layer. The index indicating the degree of the depression is the surface roughness (Ra). (A) The cerium oxide particles may be extruded into the depressed portion of the honing layer having a surface roughness (Ra) of Ιμηη or more and ΙΟμηη or less. As a result, the depressed portion of the honing layer is retained (Α) by oxidation. Rub the particles and increase the speed of honing. At this time, when the ratio (Rmax/Rmin) is within the above range, the resistance and frictional force of the (A) cerium oxide particles and the surface to be honed which are pushed into the depressed portion of the honing layer become appropriate, so that the ratio can be reduced on the one hand. Defects such as scratches, on the one hand, both high honing speed and high flattening of the insulating film. When the ratio (Rmax/Rtnin) does not reach the above range, the (A) cerium oxide particles extruded into the depressed portion of the honing layer have resistance to the honing surface of -12-201231220 and the rotational resistance is too weak, so that the squeezing is effective It is easy to discharge, and it cannot be retained, and there is a chemical mechanical honing water dispersion which cannot sufficiently increase the honing speed. On the other hand, when the ratio (Rmax/Rmin) exceeds the above range, the (A) cerium oxide particles extruded into the depressed portion of the honing layer have resistance and the rotational resistance becomes too strong, so that the squeezing cannot be squeezed. Into the recessed portion, or even if it can be squeezed in, but the residence time is long, the flatness of the surface to be honed is impaired, and the scratch is increased. Here, the long diameter of the so-called cerium oxide particle (Rmax) The intentional pointer is the longest distance between the end of the image and the end of the image of an independent cerium oxide particle imaged by an electron microscope. The short diameter (Rmix) of the dioxins and bismuth particles is the shortest distance between the ends of the image and the ends of the image by the image of one of the individual cerium oxide particles photographed by a transmission electron microscope. For example, when the image of an individual cerium oxide particle 2 photographed by a transmission electron microscope is elliptical as shown in FIG. 1, the long axis a of the elliptical shape is judged to be the long diameter (Rmax) of the cerium oxide particle, and the elliptical shape. The short axis b is judged to be the short diameter (Rmin) of the cerium oxide particles. As shown in Fig. 2, when the image of an individual cerium oxide particle 4 photographed by a transmission electron microscope is an aggregate of two particles, the longest distance c between the end portion and the end portion of the connected image is judged to be cerium oxide particles. The long diameter (Rmax), the shortest distance d between the end and the end of the Huajie image is judged as the short diameter (Rmin) of the cerium oxide particles. As shown in Fig. 3, when the image of one of the individual cerium oxide particles 6 photographed by the transmission electron microscope is an aggregate of three or more particles, the longest distance e between the end of the image and the end portion -13 - 201231220 is judged. The shortest distance f of the end portion and the end portion of the long-diameter (Rmax) of the cerium oxide particles is determined as the short diameter (Rmin) of the cerium oxide particles. By the above-described judging method, for example, the long diameter (Rmax) and the minor diameter (Rmin) of 100 cerium oxide particles are measured from the cerium oxide particle dispersion, and the ratio of each silica sand particle (Rmax/Rmin) is determined. Thereafter, the ratio (Rmax/Rmin) of the cerium oxide particle dispersion can be determined by averaging the obtained ratio (Rmax/Rmin). The chemical mechanical honing aqueous dispersion used in the present embodiment is measured by a dynamic light scattering type particle size distribution measuring apparatus, and the average particle diameter thereof is preferably in the range of 0.04 to 0.5 μm, more preferably 0.08 to 0.5 μm. The range is more preferably in the range of 0.08 to 0.3 μm, preferably in the range of 0.08 to 0.2 μm, and the average particle diameter is the average secondary particle diameter of the particles mainly composed of (A) cerium oxide particles. However, the (A) cerium oxide particles obtained by the above-mentioned transmission electron microscope observation are obtained by the chemical mechanical honing effect of the dispersion or agglomeration effect caused by components other than the (A) cerium oxide particles contained in the aqueous dispersion. The average secondary particle size shows a difference. When the average particle diameter is in the above range, the particles are likely to be extruded into the depressed portion of the honing layer having a surface roughness (Ra) of Ιμπι or more and ΙΟμπι or less. As a result, the (Α) cerium oxide particles are retained in the depressed portion of the honing layer to further increase the honing speed, and the chemical mechanical honing water system used in the present embodiment is measured by a dynamic light scattering type particle size distribution measuring apparatus. In the particle size distribution obtained by the dispersion, the particle diameter (Db) showing the highest detection frequency (Fb) is preferably 35 nm < -14 - 201231220

The range of DbS90nm. Further, the particle diameter (Db) showing the highest detection frequency (Fb) is preferably 35 nm. < Db S range of 87.3 nm, more preferably 35 nm < DbS range of 76.2 nm, preferably 35 nm <DbS range of 66.6 nm. Further, in the particle size distribution obtained by measuring the chemical mechanical honing aqueous dispersion used in the present embodiment by a dynamic light scattering type particle size distribution measuring apparatus, the particle diameter (Da) was 90 nm. The ratio (Fa/Fb) of the detection frequency (F) in the range of Da$100.0 nm to the above-mentioned detection frequency (Fb) is preferably 0.5 or less. Further, the detection frequency ratio (Fa/Fb) is more preferably 0.01 or more and 0.45 or less, and more preferably 〇.5 or more and 0.40 or less, more preferably 0.15 or more and 0.35 or less. The honing pad used in the present embodiment is The surface of the honing layer has fine irregularities of an appropriate size (hereinafter also referred to as "recesses"). The index indicating the degree of the depression is the surface roughness (Ra). If the detection frequency ratio (Fa/Fb) is in the above range, the (A) cerium oxide particles can be effectively extruded into the depressed portion of the honing layer having a surface roughness (Ra) of Ιμηη or more and ΙΟμηη or less. . As a result, the (cerium) cerium oxide particles can be retained in the depressed portion of the honing layer, and the mechanical honing action of the (cerium) cerium oxide particles can be increased, thereby increasing the honing speed. In particular, when the particle diameter (Db) is in the above range, a sufficiently large honing speed can be obtained. Further, in the case of the detection frequency ratio (Fa/Fb) in the above range, it is easy to obtain a chemical mechanical honing water-based dispersion excellent in dispersion stability. As a result, it is possible to prevent the (A) cerium oxide particles from coming into contact with the surface to be honed under a large local pressure, and the scratch of the surface to be honed can be effectively suppressed. The particle size distribution obtained by measuring the chemical mechanical honing water-based dispersion used in the embodiment of the present invention is described in detail below by using a dynamic light scattering type particle size distribution measuring apparatus. The particle size distribution of the chemical mechanical honing water-based dispersion used in the present embodiment is based on a result of measuring a chemical mechanical honing aqueous dispersion at a temperature of 25 t using a dynamic light scattering type particle size distribution measuring apparatus. The refractive index was 1.33, and the refractive index of the cerium oxide was 1.54. For the measurement device, a commercially available device can be used. For example, the model "LB_500" manufactured by Horiba Ltd. can be used. The calculation and calculation method of the particle size distribution when using a dynamic light scattering type particle size distribution measuring apparatus (manufactured by Horiba, Ltd., model LB-5 50) will be described in detail. First, for the particle diameter di measured by the dynamic light scattering method and the corresponding volume ratio, the range of 1 nm to 8 77.3 nm was cut into the following intervals to calculate the cumulative enthalpy. 1 nm < di ^ 1 O. Onm 10.0nm < di^ll.4nm 11.4nm < di^l3.1nm 13.1nm < di^l5.0nm 15.0nm < di^l7.1 nm 17.1 nm < di ^ 1 9.6 nm 19.6 nm < di^22.5nm 22.5nm < di^25.7nm 25.7nm < di^29.5nm 29.5nm < di^33.8nm 33.8nm < di^38.7nm -16- 201231220 38.7nm < di^44.3nm 44.3nm < di^50.7nm 50.7nm < di^58.1nm 58.1nm < di'66.6nm 66.6nm < di^76.2nm 76.2nm < di^87.3nm 87.3nm < di^lOO.Onm 100.0nm < di^ll4.5nm 114.5nm < di^l31.2nm 131.2nm < di^l50.3nm 150.3nm < di^l72.1nm 172.1nm < di^l97.1nm 197.1nm < di^225.8nm 225.8nm < di^ 296.2nm 296.2nm < di^ 3 3 9.3 nm 339.3 nm < di^388.6nm 388.6nm < di^445.1nm 445.1 nm < di^ 5 09.8nm 509.8nm < di^ 5 8 3.9nm 583.9nm < di^668.7nm 668.7nm < di^ 766.0nm 766.0nm < di^877.3 nm _1 0 〇 体积 % Next, the ratio Vi vol% of the cumulative enthalpy of each section which is the cumulative total of the intervals is calculated. In the invention of the present invention, the cumulative 値 of the range of -17-201231220 is shown as the cumulative 値 of the highest Vi interval, and the volume vol% is taken as the highest detection frequency (Fb). Furthermore, at 87.3 nm <Proportion of cumulative enthalpy in the interval of diS100.0 nm Vi% by volume as the detection frequency (Fa) of the particle diameter of 100 〇 nm. Based on this, after calculating Fa and Fb, the detected frequency ratio (Fa/Fb) is calculated. The content of the (A) cerium oxide particles contained in the chemical mechanical honing water dispersion is preferably from 1 to 20% by mass, more preferably from 1 to 15% by mass, even more preferably from 2 to 12% by mass, It is preferably from 3 to 9 mass%. (A) When the content of the cerium oxide particles is within the above range, a sufficient honing speed can be obtained, and at the same time, particle sedimentation and separation do not occur, and a chemical mechanical honing water-based dispersion excellent in stability can be obtained, so that good results can be achieved. performance. Further, the chemical mechanical honing water-based dispersion used in the present embodiment may be prepared by mixing two or more types of cerium oxide particles having different particle diameters, or may be mixed with two or more kinds of cerium oxide particles having different particle diameter distributions. modulation. 1.1.2. (B) Compound having two or more kinds of carboxyl groups The chemical mechanical honing water-based dispersion used in the present embodiment can suppress the honed surface by containing (B) a compound having two or more kinds of carboxyl groups. The occurrence of scratches is simultaneously optimized for the addition amount of the pH adjusting agent, and the storage stability of the chemical mechanical honing water-based dispersion is improved by the salt-dissolving effect. The component (B) is exemplified by oxalic acid, malonic acid, tartaric acid, glutaric acid, malic acid, citric acid, and maleic acid. Among these, it is preferably lemon -18- 201231220 acid, maleic acid, malic acid. The (A) cerium oxide particles are excessively adsorbed to the surface to be honed by moderately interacting the carboxyl group of the component (B) with the stanol group present on the surface of the (A) cerium oxide particle. By this action, it is presumed that the scratch suppressing effect of the honed surface can be exhibited. It is also presumed that the amount of the pH adjusting agent added is easily optimized by the buffering action of the component (B). The content of the component (B) contained in the aqueous mechanical dispersion is preferably from 0.01 to 2% by mass. More preferably, it is 1 to 1. 5 mass%, preferably 0.2 to 1 mass%. When the content of the component (B) is within the above range, the honing speed can be prevented from being lowered, and the occurrence of scratches on the honed surface can be suppressed. 1.1.3. (C) Water-soluble polymer The chemical mechanical honing water-based dispersion used in the present embodiment may contain (C) a water-soluble polymer. By containing (C) a water-soluble polymer, the honing pressure to the interlayer insulating mill can be reduced. According to this, it is possible to perform honing at a high speed without damaging the interlayer insulating film due to the honing pressure. Generally, the mechanical strength of a low dielectric insulating mill (low-k film) is lower than that of other interlayer insulating films. Therefore, when a low-k film is used as a honing object, by adding (C) a water-soluble polymer, damage to the low-k film can be prevented, and honing can be performed at a high speed. The (C) water-soluble polymer is exemplified by, for example, polyacrylic acid, polymethacrylic acid, polyvinyl alcohol, polyvinylpyrrolidone, polyacrylamide, or the like. Among these, 'polyacrylic acid having a carboxyl group in a repeating unit, polymethacrylic acid, or the like is preferred. From the viewpoint of not affecting the stability of (A) dioxin-19-201231220 bismuth particles, polyacrylic acid or polymethacrylic acid is preferred. Further, polyacrylic acid is preferred from the viewpoint of imparting appropriate viscosity to the chemical mechanical honing aqueous dispersion. The weight average molecular weight (Mw) of the (C) water-soluble polymer is preferably 50,000 or more and 800,000 or less, more preferably 100,000 or more and 500,000 or less, and most preferably 100,000 or more and 300,000 or less. When the weight average molecular weight is in the above range, on the one hand, the honing friction can be lowered, and on the other hand, the honing speed of the interlayer insulating film can be increased. (C) The weight average molecular weight of the water-soluble polymer can be a weight average molecular weight (M w ) in terms of polyethylene glycol measured by, for example, GPC (gel permeation chromatography), and is dispersed in a chemical mechanical honing water system. When sodium or potassium cerium oxide particles are used in the body, the sodium or potassium derived from the cerium oxide particles remains in the honed surface even after the honing washing operation, and it is considered to be a device. The reason why the electrical characteristics are deteriorated, so its use should be avoided. However, by adding the (C) water-soluble polymer, the water-soluble polymer can encapsulate the cerium oxide particles, so that the dissolution of sodium or potassium contained in the cerium oxide particles can be suppressed. Further, the (C) water-soluble polymer can also adsorb sodium or potassium remaining on the surface of the surface to be honed. As a result, sodium or potassium can be removed from the honed surface by a simple cleaning operation after honing, and the honing operation can be completed without deteriorating the electrical characteristics of the device. The content of the (C) water-soluble high molecular component contained in the chemical mechanical honing water-based dispersion is preferably from 1 to 1% by mass, more preferably from 0.01 to 0.5% by mass. (C) When the content of the water-soluble polymer is within the above range, the stability of the cerium oxide particles is not impaired, and on the one hand, the honing friction can be reduced, and the honing speed of the interlayer insulating film of -20-201231220 can be improved. Further, in the chemical mechanical honing water-based dispersion, cerium oxide particles having a small content of sodium or potassium are used, and sodium hydroxide or potassium hydroxide is not added to the pH adjusting agent described later, and even when the pH is acidic, The addition of (C) water-soluble polymer can also reduce the amount of sodium or potassium remaining in the honed surface, so that the honing operation can be completed without deteriorating the electrical characteristics of the device. Further, when the pH of the chemical mechanical honing water dispersion is alkaline (for example, pH 8 to ll), the ratio of the content of the component (B) to the content of the component (C) is preferably 1:1 to 1:1. Oh, better for 1: 1~1: 5. By setting the ratio of the content of the component (B) to the content of the component (C) within the above range, it is possible to more reliably achieve both the appropriate honing speed and the flatness of the honed surface. 1.1.4. (D) Oxidizing agent The chemical mechanical honing aqueous dispersion used in the present embodiment may further contain (D) an oxidizing agent. The honing speed can be further increased by containing (D) an oxidizing agent. As the oxidizing agent, a wide range of oxidizing agents can be used, and examples thereof include an aqueous hydrogen peroxide solution, an oxidizing metal salt, an oxidizing metal complex, a peracetic acid or periodic acid of a non-metal oxidizing agent, a nitrate of an iron-based ion, and a sulfate. , EDT A, oxalate, potassium ferricyanide, aluminum salt, sodium salt, potassium salt, ammonium salt, quaternary ammonium salt, barium salt, or other cationic salt of peroxide, chlorate, perchlorate , nitrates, permanganates, persulphates and mixtures of such. The content of the (D) oxidizing agent contained in the chemical mechanical honing water-based dispersion is preferably from ~. 5 to 4% by mass, more preferably from 0.1 to 3% by mass. When the content of the component (D) is within the above range, the honing speed to the insulating film can be further improved. 1.1.5 · Other Additives 1.1.5.1. pH Adjusting Agent The pH of the chemical mechanical honing water-based dispersion used in the present embodiment is preferably 1. 5 to 4.5, more preferably 2 to 4 . When it is alkaline, it is preferably from 8 to 12, more preferably from 9 to II. When the pH 値 is in the above range, the (A) cerium oxide particles are not aggregated or dissolved to improve the stability, and a good wiring pattern can be easily obtained. The means for adjusting the pH of the chemical mechanical honing water-based dispersion is exemplified by the addition of a pH adjuster typified by an alkaline salt such as potassium hydroxide, ammonia, ethylenediamine or TMAH (tetramethylammonium hydroxide). Among these basic salts, ammonia or potassium hydroxide is preferred. These basic salts may be used singly or in combination of two or more. Further, since the chemical mechanical honing aqueous dispersion before the addition of the basic salt contains the component (B), it usually exhibits an acidity of pH 1.5 to 4.5. 1.1.5.2·Interacting Agent The chemical mechanical honing aqueous dispersion used in the present embodiment may optionally contain a nonionic surfactant, an anionic surfactant or a cationic surfactant. The above nonionic surfactant is exemplified by, for example, a higher alcohol, a fatty acid ether, a fatty acid ester or the like. The above anionic surfactant is exemplified by, for example, an aliphatic soap, a sulfate salt, a phosphate salt or the like. The above cationic surfactants are exemplified by, for example, an aliphatic amine salt, an aliphatic ammonium salt, etc. -22-201231220. These surfactants may be used alone or in combination of two or more. The content of the surfactant contained in the chemical mechanical honing water-based dispersion is preferably 0.01 to 0.2% by mass, more preferably 0·〇1 to 〇·15% by mass, most preferably 0.01 to 0.1% by mass. When the content of the surfactant is within the above range, the flatness of the surface to be honed can be improved and the scratch can be reduced. 1.1.6. Method for producing chemical mechanical honing water-based dispersion The chemical mechanical honing water-based dispersion used in the present embodiment can be directly added by adding (Α) component and (Β) component as needed. It is prepared in pure water and mixed and stirred. The chemical mechanical honing water-based dispersion thus obtained can be used as it is, but a chemical mechanical honing water-based dispersion containing the components in a high concentration (that is, concentrated) can be prepared and diluted to a desired concentration at the time of use. use. Further, a plurality of liquids (for example, two or three kinds of liquids) containing any one of the above-mentioned components may be prepared and used by mixing them at the time of use. In this case, after mixing a plurality of liquid preparation chemical mechanical honing water dispersions, the liquid dispersion may be supplied to the honing device, or a plurality of liquids may be individually supplied to the honing device to be modulated on the pressure plate. Chemical mechanical honing water dispersion. 1.2. Honing pad The configuration of the honing pad used in the present embodiment is not particularly limited as long as it has a honing layer on at least one side. The honing layer is characterized in that the surface roughness (Ra) of the surface which is in contact with the object to be honed during chemical mechanical honing (hereinafter only "honing surface" -23-201231220) is Ιμιη or more ΙΟμηι or less. . Hereinafter, the chemical mechanical honing pad will be described in detail with reference to the drawings. Fig. 4 is a cross-sectional view schematically showing an example of a honing pad used in the embodiment. As shown in Fig. 4, the honing pad 1 〇〇 comprises a honing layer 10, and a support layer 12 formed on the surface of the honing layer 10 in contact with the platen 14 for the honing device. 1.2.1. Honing layer 1.2 .1.1. Shape and Material FIG. 5 is an enlarged view of the area I in FIG. 4, and is a cross-sectional view schematically showing the detailed shape of the honing layer 1 。. As shown in Fig. 5, the honing surface 20 is preferably formed with a plurality of recesses 16. The recess 16 has a chemical mechanical honing water-based dispersion that is supplied during chemical mechanical honing to evenly distribute the hydrating surface 20 while simultaneously honing or using chemical mechanical honing water The waste such as the dispersion is temporarily retained and functions as a route for external discharge. The cross-sectional shape of the concave portion 16 is not particularly limited, and may be, for example, a shape formed by a flat side surface and a bottom surface, a polygonal shape, and a U shape. Shape, V shape, etc. The depth a of the recessed portion 16 is preferably 0.1 mm or more, more preferably 〇.imm~2.5 mm' is preferably 〇. 2 mm to 2. Omm. The width b of the recess 16 is 0.1 mm or more, more preferably 0.1 mm to 5.0 mm, and most preferably 〇. 2 mm to 3. Omm. In the honing surface 2, the interval c between the adjacent concave portions 16 is preferably 〇.〇5 mm or more, more preferably 0.05 mm to 100 mm, and most preferably O.lmm to l〇mm. Further, the distance d between the width of the concave portion and the distance between the adjacent concave portions is preferably 0.15 mm or more, and -24 to 201231220 is more preferably 1515 mm to 105 mm, more preferably 〇.6 mm to 13 mm. By forming the concave portion 16 having the shape of the above-described range, the scratch-reducing effect on the surface to be honed is excellent, and the chemical mechanical honing pad having a long life can be easily manufactured. The foregoing preferred ranges can be various combinations. That is, for example, the depth a is preferably 0.1 mm or more, the width b is 0.1 mm or more, the interval c is 〇.〇5 mm or more, and the better depth a is 0.1 mm to 2.5 mm, and the width b is 0.1 mm to 5.0 mm. c is 0.05 m to 100 mm, preferably depth a is 0.2 mm to 2.0 mm, width b is 0.2 mm to 3.0 mm, and interval c is 0.1 mm to 10 mm. For the tool for processing the concave portion 16, a multi-blade tool having the shape described in JP-A-2006-167811, JP-A-2001-18164, and JP-A-2008-183657 can be used. The cutting edge of the tool used may also have at least one metal element selected from diamonds, or metals of Groups 4, 5, and 6 of the periodic table such as Ti, Cr, Zr, V, and at least one selected from nitrogen, carbon, and oxygen. A coating layer composed of a non-metallic element. Further, the coating layer is not limited to a single layer, and a plurality of layers different in material may be provided. The film thickness of the coating layer is preferably from 0.1 to 5 μm, more preferably from 1.5 to 4 μm. The film formation of the coating layer can be appropriately selected according to the tool material, the coating material, and the like using a conventional technique such as an arc ion plating apparatus. The planar shape of the honing layer 10 is not particularly limited and may be, for example, a circular shape. When the planar shape of the honing layer 10 is circular, the size thereof is preferably 150 to 1 200 mm in diameter, more preferably 5 to 00 to 1 000 mm in diameter. The thickness of the honing layer 10 is preferably from 0.5 to 5.0 mm, more preferably from 1.0 to 4.0 mm, most preferably from 1.5 to 3.5 mm. Fig. 6 is a plan view of the honing pad 100 used in the present embodiment. As shown in Fig. 25-201231220, the recess 16 can be formed into a plurality of concentric circles from the center of the honing surface 20 toward the outer edge. Fig. 7 is a plan view of the honing pad 200 of the first modification, which corresponds to Fig. 6. The honing pad 200 according to the first modification includes a plurality of recesses 16 in a ring shape, and further includes a plurality of recesses 17 and recesses 18 extending radially from the center portion of the honing surface 20 toward the outer edge direction. The sanding pad 100 is different. Here, the center portion is a region surrounded by a circle having a radius of 50 mm with the center of gravity of the honing layer as a center. The concave portion 17 and the concave portion 18 may be formed so as to extend from the arbitrary position in the "central portion" toward the outer edge direction. The shape may be, for example, a linear shape, or may be an arc shape or a combination of the shapes. The cross-sectional shape of the concave portion 17 and the concave portion 18 may be the same as the aforementioned concave portion 16. The other configuration of the honing pad 200 of the first modification is the same as the configuration of the honing layer 10 described with reference to Figs. 4 and 5, and therefore the description thereof will be omitted. Fig. 8 is a plan view of the honing pad 3 00 of the second modification, which corresponds to Fig. 6. The honing pad 300 according to the second modification includes a plurality of recesses 16 which are provided in the annular shape, and further includes a plurality of recesses 19 extending radially from the center portion of the honing surface 20 toward the outer edge direction, and the honing pad. 1〇〇 is different. The cross-sectional shape of the concave portion 19 can be the same as that of the aforementioned concave portion 16. The other configuration of the honing pad 300 according to the second modification is the same as the configuration of the honing layer 10 described with reference to Figs. 4 and 5, and therefore the description thereof will be omitted. Although the planar shape of the concave portion has been described above, the planar shape of the concave portion is not particularly limited to the above embodiment, and may be an optimum shape depending on the object to be polished. The planar shape of the concave portion may be a polygonal shape such as a triangle, a quadrangle or a pentagon, or an elliptical shape, a spiral shape or the like. Moreover, the number of recesses of the honing surface set at -26-201231220 is not particularly limited. The honing layer 10 can also be constructed of a raw material that achieves the object of the present invention as much as possible. Further, in order to maintain the slurry holding energy and the honing speed for a long time during the mechanical honing, it is preferred to form voids in the honing layer 10 during chemical mechanical honing. Therefore, the honing layer 10 is a raw material made of a non-aqueous soluble matrix in which water-soluble particles are dispersed, or a raw material made of a water-insoluble matrix in which pores are dispersed, and is preferably, for example, a foam. 1.2.1.2. Surface roughness (Ra) The surface roughness (Ra) of the honing surface 20 of the honing layer 10 is preferably in the range of Ιμηη or more and ΙΟμηη or less, more preferably 2 μηι or more and 8 μιη or less, and the honing surface 20 When the surface roughness (Ra) is in the above range, the (A) cerium oxide particles contained in the above-described chemical mechanical honing water-based dispersion are easily extruded into the depressed portion of the honing surface 20. As a result, the honing speed is further increased by holding the particles in the recessed portion of the honing surface 20 and staying. Further, when the surface roughness (R_a) of the honing surface 20 is within the above range, the honing surface 20 can function as a buffer for avoiding contact between the (A) cerium oxide particles and the honed surface by a local large pressure. Suppresses scratches on the surface being honed. At this time, when the ratio (Rmax/Rmin) of the (A) cerium oxide particles is in the above range, the resistance and frictional force of the (A) cerium oxide particles and the honed surface which are pushed into the depressed portion of the honing layer Since it is moderate, the defects such as scratches can be reduced, and on the other hand, the high honing speed and the high flattening of the insulating film can be achieved. When the surface roughness (Ra) is less than the above range, the honing surface 20 is slightly flat, and it is difficult to cause (A) cerium oxide particles to be retained in the honing surface 20. -27- 201231220 stagnation, so the honing speed is large Reduce the problem. On the other hand, when the surface roughness (Ra) exceeds the above range, the volume of the depressed portion of the honing surface 20 becomes large, and the (A) cerium oxide particles in the depressed portion are relatively insufficient. As a result, it is less likely to cause retention and retention in the (A) cerium oxide particle honing surface 20, and there is a problem that the honing speed is lowered. The surface roughness (Ra) of the honing surface can be measured as follows. First, a surface roughness measuring machine (for example, "SURFTEST" manufactured by Mitsu Toyo Co., Ltd.) is used for any part of the honing layer of the honing pad, and the condition is 〇5 mm/s, and the reference length is 0.8 mm. The roughness curves of the five sections were measured twice in the direction and the lateral direction, respectively. From the obtained roughness curve, the average of the absolute 値 of the deviation from the average line to the measurement curve was obtained, and the 値 was used as the surface roughness (Ra) of the honing surface. 1.2.1.3. Duro D hardness The Duro D hardness of the honing layer 10 is preferably 50D or more and 80D or less, more preferably 55D or more and 80D or less, and more preferably 55D or more and 75D or less, preferably 60D or more and 70D or less. Fig. 9 is a schematic view showing the concept of Duro D hardness in the honing layer. When the honing step shown in Fig. 9(A) was simulated, when the load was applied to the honing layer 1 from above, the honing layer 1 〇 was bent as shown in Fig. 9 (B). The Duro D hardness is an index indicating the degree of macroscopic deflection of the honing layer 1 施加 when the load is applied in the honing step. This hardness can also be understood by the measurement method described later. Therefore, when the Duro D hardness of the honing layer is within the above range, the flatness of the honed surface becomes good due to the moderate hardness of the Duro D of the honing layer, and the embossing of the honed surface by the honing layer -28-201231220 The elastic deformation (followability) is moderate, which can reduce scratch defects. The Duro D hardness of the honing layer 10 can be measured in accordance with the method of "JIS K625 3". Specifically, the test piece was placed on a flat and firm surface, and the pressure plate of the D-type Durometer was held in parallel on the surface of the test piece so that the pressure pin was at right angles to the surface of the test piece. The D-type hardness tester was held, and the pressure plate was brought into contact with the test piece so as not to impart an impact. The front end of the needle was measured at a position 12 mm or more from the end of the test piece. After the pressure plate was brought into contact with the test piece, it was read after 15 seconds. The number of measured points is measured 5 times at a distance of 6 mm or more, and the middle enthalpy is used as the Duro D hardness of 1.2.1.4. The surface hardness in the wet state is preferably 2N/ in the wet state of the honing layer 10. Mm2 or more, ΙΟΝ/mm2 or less, more preferably 3N/mm2 or more, 9N/mm2 or less, and most preferably 4N/mm2 or more and 8N/mm2 or less. The surface hardness in the wet state of the honing layer is an index indicating the actual surface hardness at the time of the honing step. Fig. 10 is a schematic view showing the state of the surface hardness of the honing layer. As shown in Fig. 10 (A), the probe 40 of a small size is pressed toward the surface of the honing layer 10. At this time, as shown in Fig. 10(B), the honing layer 10 directly under the probe 40 is deformed by being pressed around the periphery of the probe 40. Therefore, the surface hardness is an index indicating the degree of deformation or deflection of the extreme surface of the honing layer. That is, the aforementioned Duro D hardness of the millimeter unit hardness measuring method shown in Fig. 9 is obtained with respect to the data indicating the giant hardness of the entire honing layer, as shown in Fig. 10, 硏-29- 201231220 The surface hardness measurement in the wet state is obtained by data indicating the macroscopic hardness of the extreme surface of the honing layer. The honing at the honing step is laminated to a depth of 5 to 5 Ομηι. Therefore, in order to judge the softness of the extreme surface of the honing layer, it is preferable to judge the surface hardness of the wet state of the honing layer. When the surface hardness of the wet state of the honing layer is within the above range, since the extreme surface of the honing layer has moderate flexibility, it can be used as a contact between the cerium oxide particles and the non-honing surface with a local large pressure. Buffering effect. This action is complementary to the (Α) cerium oxide particle having a ratio (Rmax/Rmin) of 1.1 to 1.5, so that the resistance of the (A) cerium oxide particles and the surface to be honed which are extruded into the surface of the honing layer is changed. Appropriateness, on the one hand, can effectively reduce the defects such as scratches on the honed surface, and on the other hand, the high honing speed and high flatness of the insulating film. Further, in the present invention, the surface hardness in the wet state of the honing layer means a honing layer immersed in water at 23 ° C for 4 hours, and a Nano Indenter manufactured by FISCHER Co., Ltd. is used. (product name: HM2000), the hardness (HU) at a pressure of 300 mN was measured. 1.2.2. Support Layer The support layer 12 is used in the honing pad 1' for supporting the honing layer 1 于 on the platen 14 for the honing device. The support layer 12 may be an adhesive layer or a buffer layer having an adhesive layer on both sides. The layer can then consist, for example, of an adhesive sheet. The thickness of the adhesive sheet is preferably from 50 to 250 μm. By having a thickness of 50 μm or more, the pressure from the side of the honing surface 20 of the honing layer 10 can be sufficiently alleviated. By having a thickness of -30-201231220 degrees below, the unevenness can be obtained without affecting the honing performance. To the extent of a chemical mechanical honing pad 100 having a uniform thickness. The material of the adhesive sheet is not particularly limited as long as the honing layer 10 can be fixed to the pressure plate 14 for the honing device, but is preferably an acrylic or rubber material having a lower modulus of elasticity than the honing layer 10 . . The adhesive strength of the adhesive sheet is not particularly limited as long as it can fix the chemical mechanical honing pad to the pressure plate 14 for the honing device, but when the adhesive strength of the adhesive sheet is measured in accordance with the specification of "JIS Z0237", the adhesive strength is better. It is 3N/25mm or more, more preferably 4N/25mm or more, and most preferably 10N/25mm or more. When the cushion layer is made of a material having a lower hardness than the honing layer 10, the material is not particularly limited, and may be a porous body (foam) or a non-porous body. The buffer layer is exemplified by, for example, a layer in which a foamed polyurethane is formed. The thickness of the buffer layer is preferably from 0.1 mm to 5.0 mm, more preferably from 0.5 mm to 2.0 mm. 1.2.3. Method of Manufacturing the Honing Pad A description will be given of an example of a method of manufacturing the honing pad used in the present embodiment. First, it is prepared to add a polyurethane (preferably a thermoplastic polyurethane), an optional water-soluble particle, a crosslinking agent, a crosslinking auxiliary, an organic material, an inorganic material, and the like. The composition of the composition. The kneading of the composition can be carried out by using a conventional kneading machine or the like. The kneading machine is exemplified by, for example, a "roller, a kneader, a Ruder, a Banbury kneader, an extruder (single-axis, multi-axis), etc. - 31 - 201231220 Next, a honing layer is molded from the obtained composition. The plasticized composition is formed by press molding or injection molding at 120 to 23 ° C, and the specific gravity of the honing layer can be controlled by a plasticizing and flaking method by appropriately adjusting the molding conditions. After honing the surface of the obtained molded body, and then performing the 3) treatment, the surface having any surface roughness (Ra) can be formed, and the surface can be processed by cutting. Further, by molding using a mold which is formed into a pattern of a concave portion by molding, and forming a shape other than the honing layer, and finally, the molded body thus formed may not be recessed to form the adhesive sheet or the buffer layer. Waiting for the support layer. 1.3. Honing device The honing device used in the present embodiment is such that the semiconductor substrate can be brought into contact with the honing layer on the platen while the chemical mechanical honing water dispersion honing pad is placed on the platen. The honing device is not particularly limited. The chemical mechanical honing method of the present embodiment can use a mechanical honing device. Commercially available chemical mechanical honing equipment is listed as EPO-112", model "EPO-222" (above is manufactured by Ebara Co., Ltd.); model; "LGP-510", model" (above Lapmaster-SFT): Model Applied Materials Inc.) and so on. The method is as long as it can be shaped and extruded into a shape. Or hardness. In addition, i (dressing honing layer. The concave portion is formed so that the above-mentioned group forms a concave portion. The chemical surface of the surface is fixed to the grinding layer and sold, for example, the model ^ Manufacturing Co., Ltd.! "LGP-552 "Mirra (-32-201231220 1.4. Use The chemical mechanical honing method of the present embodiment is not particularly limited, but is preferably used for honing an insulating film. The specific use is exemplified as a fine element separation step (STI step). The insulating film honing, the interlayer insulating honing of the multilayered wiring board, etc. The material constituting the interlayer insulating film which is the insulating film or the multilayer wiring substrate which is the object of honing in the above STI step is exemplified by, for example, a thermal oxide film, PETEOS. (Plasma Enhanced-TEOS, plasma enhanced TEOS) film, HDP (High Density Plasma Enhanced-TEOS * high density plasma enhanced TEOS) film, ruthenium oxide film obtained by thermal CVD, BPSG (boron phosphide glass) Film, PSG (ortho-rhodium glass) film, etc. In addition to the SiO 2 film, the insulating film also includes a low dielectric constant interlayer insulating film for improving the performance of the ultra-LSI. The interlayer insulating film of electric conductivity is exemplified by, for example, fluorinated S i Ο 2 (dielectric ratio: 3.3 to 3.5), polyimide resin (dielectric ratio: about 2.4 to 3.6; Hitachi Chemical Co., Ltd. Manufactured by the company, trade name "PIQ"; manufactured by Allied Signa Co., Ltd., trade name "BCB", etc.), hydrogen-containing SOG (dielectric ratio: about 2.5 to 3.5), and organic SOG (dielectric ratio: about 2.9; Hitachi Interlayer insulating film produced by Chemical Industry Co., Ltd., trade name "HSGR7", etc. 2. EXAMPLES Hereinafter, the present invention will be described by way of examples, but the present invention is not limited by the examples. - 201231220 2.1. Preparation of aqueous dispersions (A1 to A9) containing cerium oxide particles The aqueous dispersions A1 to A9 containing cerium oxide particles described in Tables 1 and 2 were prepared by the following methods. The aqueous dispersion containing colloidal cerium oxide particles (A1 to A4) is prepared by mixing 3 volumes of tetraethoxy decane with 1 volume of ethanol to obtain a raw material solution, which is prepared by mixing ethanol, ion-exchanged water, and ammonia in advance. The reaction solvent is fed into the reaction tank while maintaining the temperature of the reaction solvent at 20 The solution was cooled in a manner of ° C, and a raw material solution of 1 volume per 9 volumes of the reaction solvent was added dropwise to the reaction vessel to obtain an alcohol dispersion of colloidal cerium oxide. Next, the obtained alcohol was dispersed using a rotary evaporator. The ion exchange water was added to maintain the temperature of the body at 80 ° C to remove the ethanol, and the operation was repeated several times. By this operation, the aqueous dispersions (A 1 to A4 ) containing the colloidal cerium oxide particles described in Table 1 were prepared. Further, in the above operation, the particle diameter of the colloidal cerium oxide is controlled by adjusting the ammonia concentration and the dropping rate. 2.1.2. Preparation of a water dispersion containing a colloidal cerium oxide particle (A5 to A8) In a glass vessel equipped with a distillation tube with a condenser, 2900 volumes of ion-exchanged water and 1 volume of triethanolamine are fed, and the reaction is carried out. The liquid temperature in the vessel was maintained at 70 to 90 ° C, and 520 volumes of tetramethyl phthalate were continuously supplied under stirring for about 3 hours. The mixture in the reaction vessel is heated to 95 ± 5 t, and the methanol produced by the -34-201231220 is distilled off together with water at a distillation temperature of 90 ± 10 ° C to obtain a colloid. An aqueous dispersion of cerium oxide particles. 90 volumes of the aqueous dispersion containing the colloidal cerium oxide particles, 940 volumes of ion-exchanged water, and 1 volume of triethanolamine are fed into a glass vessel equipped with a distillation tube with a condenser, while maintaining the liquid temperature in the reaction vessel At 80 ° C, 410 volumes of tetramethyl phthalate were continuously supplied over 3 hours with stirring. Keeping the liquid level in the reaction vessel in a certain state, while adding ion-exchanged water, the reaction mixture is heated to 95 ± 5 ° C, and the distillate tube attached to the condenser will be at a distillation temperature of 90 ± 10 ° C. The produced methanol was distilled off together with water to obtain an aqueous dispersion of the colloidal cerium oxide particles (A5 to A8) described in Table 2. Further, in the above operation, the particle diameter of the colloidal cerium oxide is controlled by adjusting the reaction temperature, the stirring speed, and the reaction time. 2.1.3. Preparation of a water dispersion containing a fumed cerium oxide particle (A9) A fumed cerium oxide particle (manufactured by Nippon Aero Sil Co., Ltd., trade name "Aer〇Sil#90", using an ultrasonic disperser "The average primary particle size of 0.0 2 μmη" was dispersed in ion-exchanged water. This was filtered through a filter having a pore size of 5 μm to obtain fumed cerium oxide particles (Α9) shown in Table 2. The average secondary particle size of the fumed cerium oxide contained in the aqueous dispersion was 〇.22. Further, the average primary particle diameters shown in Tables 1 and 2 were determined by calculating the specific surface area of the powder sample obtained by drying the above-described aqueous dispersion of ceria particles prepared by the BET method. The average secondary particle diameters shown in Tables 1 and 2 were measured by using a transmission electron-35-201231220 microscope to observe the particle diameter of each particle of 100 parts of the above-mentioned prepared cerium oxide particle dispersion. It is averaged and found. Specifically, the magnification is adjusted so that the field of view includes 20 to 30 particles (the magnification standard in the TEM observation is 10,000 to 100,000 times, but is appropriately adjusted according to the size of the cerium oxide particles), and photography is performed. After the TEM photograph of the cerium oxide particles contained in the field of view, the diameter of each particle was measured by TEM photograph. Then, the field of view was changed, and the operation was carried out five times in total, and the average secondary particle diameter was obtained from the obtained data. At this time, the long diameter (Rmax) and the short diameter (Rmin) of each of the cerium oxide particles can be simultaneously measured, and the ratio (Rmax/Rmin) of each of the silica sand particles can be obtained, and the average of the cerium oxide particles can be averaged. In Table 1 and Table 2. 2.2. Preparation of Chemical Mechanical Honing Water Dispersion (S1 to S16) 0.3 parts by mass of maleic acid and 0.1 parts by mass of polyacrylic acid (manufactured by Toagosei Co., Ltd., trade name "AC-10H", Mw: 150,000), the colloidal cerium oxide aqueous dispersion A1 is mixed in a solid content of 3 parts by mass, and then potassium hydroxide is added so that the pH becomes 10.5, and the amount of all the components is 100 parts by mass. The ion-exchanged water was placed in a polyethylene bottle and stirred for 1 hour, and then filtered through a filter having a pore diameter of 0.5 μm to prepare a chemical mechanical honing aqueous dispersion S 1 of Example 1 described in Table 1. In addition to changing the type, content, and pH of the components (()) to (D) to the compositions described in Table 1 or Table 2, the chemical mechanical honing water is produced in the same manner as the above-described chemical mechanical honing aqueous dispersion S1. The dispersions are S2 to S16. -36- 201231220 In addition, in Tables 1 and 2, "PAA(a)" indicates that ί (manufactured by Toagosei Co., Ltd., polyacrylic acid: Mw: )" indicates the trade name "AC-10L" (East Asian Synthetic Acid: Mw: 3) Wan). 2.3. Chemical Mechanical Honing Water Dispersion 2 · 3 . 1. Measurement of Average Particle Size The chemical mechanical honing water produced above was used as a sample. The dynamic light scattering particle size distribution was used as the company's model "LB-550 sample, and the particle size distribution was obtained. Further, the average particle size distribution of the particles contained in the aqueous dispersion of the obtained particle size honing was obtained. The detection frequency (Fa) within the range of the particle size interval lOO.Onm of the chemical detection honing water system (Fb) is shown as Fa/Fb. The results are shown in Table 1 and Table. 2, I. Product name "AC-10H": 50,000), "PAA (manufactured by b company, polypropylene physical property measurement dispersion directly as a measuring device (manufactured by Horiba)") The measurement distribution was measured to obtain a chemical mechanical particle size. Further, from the particles contained in the obtained dispersion, the frequency ratio was detected from 87.3 nm to the ignorance ([When the body is fed into the glass of 100 CC for 6 months, whether there is a sink 1 or a table 2, it is not confirmed," the particle is confirmed. 37- 201231220 【I谳】 CO ω ο 0.05 0.07 c〇CO 1 1 PAA(a) 5 \ 1 Glycine CO 〇· 1 10.0 0.17 50.7-58.1 σ> CO 15.8 0.25 Good CO 0.05 0.07 CO CO 1 1 PAA (a) Ο 1 1 | acetic acid | CO ο 1 10.5 0.15 , 58.1-66.6 O) in 15.2 0.39 good CO CO < 0.03 0.06 r- CO Maleic acid 1 CO 〇 PAA(b) Ο 1 1 1 CO 10.5 0.06 50.7-58.1 CO 15.4 0.28 Good in CO inch < 0.05 0.08 OJ m Citric acid CO C) PAA(a) CO ο 1 1 1 1 CM 10.5 0.22 66.6-76.2 IO) iri 15.1 0.39 Good w CO 1 0.05 0.07 CO CO 1 Maleic acid | CO 〇PAA(a CSJ 1 1 1 1 CO csl to σ> 0.20 _I 58.1-66.6 CM cd 15.3 0.41 Good CO CO 0.04 0.08 csj T-· in Malic acid in 〇PAA(a) Τ Ο 1 1 1 1 in 10.0 I 0.15 50.7- 58.1 I 00 CO 15.3 0.25 Good CM C/5 0.04 0.08 Osj CO Citric acid inch 〇PAA(a) CM Ο 1 1 1 1 CM τ— 11.5 0.20 50.7-58.1 I 00 CO 15.7 0.24 Good w < 0.03 0.06 CO Maleic acid | C0 〇PAA(a) ο 1 1 1 1 CO 10.5 0.10 50.7-58.1 CSJ 々· 15.5 0.27 Good chemical mechanical honing water-based dispersion type cerium oxide particle aqueous dispersion Average average particle size ("m) Average secondary particle size (//m) Rmax/Rmin Solid content (% by mass) Species content (% by mass) m Qing content (% by mass) mm Content reimbursement %) LiTM w content (% by mass) (C): (B) Content ratio average particle size ("m) Fb particle size interval (nm) Detection frequency (Fa) Detection frequency (Fb) Detection frequency ratio ( Fa/Fb) Storage stability (VIII) Ingredients (8) Ingredient (c) Ingredients (9) Into other -38- 201231220 [css S16 0.01 0.02 in p in maleic acid 〇PAA(a) 0.01 1 1 1 1 〇Τ-10.0 0.03 76.2- 87.3 Ο σί 16.3 0.55 Bad S15 0.03 0.04 ! οι CO Maleic acid 5 1 I 丨 Hydrogen peroxide 1 \Γ> 1 1 1 ir> ΓΟ 0.04 38.7-44.3 σ> 15.9 0.12 Good S14 0.03 0.04 1 CNJ citric acid CM 〇1 1 1 1 1 1 1 Ο CO 0.04 38.7-44.3 Ύ— 17.5 0.06 Good S13 in 0.02 | 0.03 00 Maleic acid d PAA(a) 0.02 t 1 1 1 r*~ Ο csi 0.04 44.3-50.7 Ο 13.5 I 0.30 Good S12 0.04 0.08 ! csi 00 丨 Maleic acid CO ο 1 PAA(a) 5 1 Hydrogen peroxide 1 md 1 1 CO τ— 10.0 0.12 66.6-76.2 CO 14.5 0.42 Good 0.03 0.04 1 CSj Citric acid CVJ Ο PAA(a) 0.04 1 1 1 1 in τ-10.5 0.05 44.3-50.7 C0 CO 15.6 1 0.21 Good S10 in 0.02 0.03 σ> |Maleic acid | Τ'- ο | PAA(a ) 0.02 1 1 1 1 in τ-10.0 0.04 44.3-50.7 兮CO 16.3 0.21 Good σ> (/) 0.02 0.22 1 cp 00 Maleic acid 00 ο 1 1 1 1 1 1 1 10.5 0.60 100.0-114.ί 18.3 15.3 1.20 Defective chemical mechanical honing water-based dispersion type of cerium oxide particle aqueous dispersion! Average primary particle size ("m) Average secondary particle size (ym) Rmax/Rmin Solid content (% by mass) Content (% by mass) Species content (% by mass) Species content (% by mass) m «Ιττηΐ Qing content (% by mass) (C): (B) Content ratio X α Average particle size ("m) Fb particle size interval (nm) Detection frequency (Fa) Detection frequency (Fb) Detection frequency ratio (Fa/Fb) Storage stability (A) Component (8) Component (c) Component (9) Component -39- 201231220 2.4. Manufacture of honing pad PI ~ P 15 2.4.1. Fabrication of honing pad P1-P7 50 parts by mass of non-alicyclic thermoplastic polyamine compounded by Ruder temperature adjusted to 2 〇〇 °C Carbamate (manufactured by BASF, trade name "Elastollan 1174D", hardness 70D), 50 parts by mass of alicyclic thermoplastic polyurethane (manufactured by BASF, trade name "Elastollan 1197A", hardness 61D) 29 parts by mass of β-cyclodextrin (manufactured by Sakai Port Sugar Co., Ltd., trade name "DEX PEARL β-1〇〇", average particle size 20 μιη) as a water-soluble particle to prepare a thermoplastic polyurethane Composition. The prepared thermoplastic polyurethane composition was compression-molded at 180 ° C in a press mold to prepare a cylindrical molded body having a diameter of 84 5 mm and a thickness of 3.2 mm. Then, the surface of the molded body produced by sanding was honed, and the thickness was adjusted, and then a concentric shape of a width of 55 mm, a depth of 1.5 mm, and a pitch of 1.5 mm was formed by a cutting machine (manufactured by Kato Machinery Co., Ltd.). The concave portion was cut out and the peripheral portion was cut out to obtain a honing layer having a diameter of 600 mm and a thickness of 2.8 mm. The double-sided tape #422JA (manufactured by 3M Co., Ltd.) was attached to the surface of the honing layer thus formed, and the honing layer was attached to a chemical mechanical honing device (manufactured by Ebara Seisakusho Co., Ltd., model "EP0-112" In addition, a dressing machine (manufactured by Allied Co., Ltd., trade name "#325-63R") was used for finishing treatment to prepare a honing pad P1. In addition, the components and contents of the thermoplastic polyurethane composition were changed to those described in Table 3, and the conditioning conditions were changed to adjust the surface roughness (Ra) of the honing layer. Grinding pad Pi also made the honing pad P2~P7 ° -40- 201231220 2.4.2. The honing pad P8~P 11 was produced under air atmosphere, and 38 parts by mass was placed in a 2L four-neck separable flask equipped with a stirrer. Polyoxyethylene bisphenol aether (manufactured by Nippon Oil Co., Ltd., trade name "UNIOL DA400") and 31 parts by mass of polytetramethylene glycol (manufactured by Hodogaya Chemical Industry Co., Ltd., trade name "Kenting" 0-1000 SN"'Mn: 1012), and the temperature was adjusted to 40 ° C and stirred. Next, 31 parts by mass of 4,4'-diphenylmethane diisocyanate dissolved in an oil bath of 80 ° C (manufactured by Nippon Polyurethane Industrial Co., Ltd., trade name "MILLIONATE MT" was added to the flask. "), stir for 15 minutes and mix. Next, the resulting mixture was spread on a surface-treated SUS pad, allowed to stand at ll ° C for 1 hour, and then annealed at 80 ° C for 16 hours to obtain a thermoplastic polyurethane A. The honing pad P8~ was produced in the same manner as the honing pad P1 except that the polyurethane A was used as the thermoplastic polyurethane and the other components and contents of the composition were changed to those shown in Table 3. P 1 1. Further, when the honing pad P 1 1 was produced, the step of sanding and trimming was not performed. 2.4.3. Honing pads P12 to P15 A commercially available honing pad (manufactured by ROHM & HAAS, trade name "1C 1 000", honing layer made of heat-crosslinked polyurethane resin) was used. The surface roughness (Ra ) is adjusted by trimming the honing layer of the honing pad to prepare the honing pads P12 to P15. The physical properties of the honing layer were evaluated by the method described later, the Duro D hardness was 63 D, and the surface hardness was 14.5 N/mm 2 . -41 - 201231220 In addition, the abbreviations of the components in Table 3 are as follows: • "PU1-1": Non-alicyclic thermoplastic polyurethane (manufactured by BASF, trade name "Elastollan 1 1 74D", hardness 70D • “PU1-2”: Non-alicyclic thermoplastic polyurethane (manufactured by BASF, trade name “Elastollan 1180A”, hardness 41D) • “PU2-1”: alicyclic thermoplastic polyurethane Ester (manufactured by BASF, trade name "Elastollan NY1197A", hardness 61D) • "β-CD": P-cyclodextrin (average particle size 20μπι, manufactured by Sakai Port Sugar Co., Ltd., trade name "DEX PEARL β-100 2.5) Measurement of the physical properties of the honing layer 2.5.1. Measurement of the surface roughness (Ra) The surface roughness measuring machine (manufactured by MitsuToyo Co., Ltd.) was used for any part of the honing layer of the honing pad prepared above. In the "SURFTEST", the roughness curves of the five sections were measured twice in the longitudinal direction and the lateral direction under the conditions of a speed of 0.5 mm/s and a reference length of 0.8 mm. From the obtained roughness curve, the average of the absolute 値 of the deviation from the average line to the measurement curve was obtained, and the 値 was used as the surface roughness (Ra ) of the honing surface. The results are shown in Table 3. 2.5.2. Duro D Hardness Duro D hardness was measured for the honing layer of the above-made honing pad. The Duro D hardness of the 磨 layer is measured in accordance with "JIS K625 3". The results are shown in Table 3. -42- 201231220 2.5.3. Surface hardness in wet state The wet state hardness was measured for the honing layer of the above-made honing pad. The surface hardness in the wet state of the honing layer is the honing layer for 4 hours in 23t water, using the nanoindentation tester Indenter) (FISCHER's 'virtual HM2000') is pressed at 300mN. The universal hardness (HU) as the surface hardness—倂 is shown in Table 3. The surface was immersed in (Nano) and measured. Results -43 - 201231220 m ^― α Using IG1000 p τ— Q CO CO ΙΟ κ Q CO CO in CO κ SQ CO CO in inch · CSJ Q. 〇00 a CO CD m — ε 1 1 I o T-1 σ> Ω in CO ο Ε 1 1 1 o 1 00 CO 〇m CO σ σ> 1 1 1 o σ&gt ; CsJ ΙΟ ο Q CO CM 七 1 1 to σ> csj C7 <6 Q CO CM 1 o 1 1 σ> CNJ in Q 5 ο ο 1 1 1 00 CM CO Q ra CM c6 S 1 ss 1 00 in Q s 00 ΙΟ 2 s 1 s 1 00 CO Q l〇σ> 00 2 1 o 1 σ> CM Q CO σ> £ s 1 g 1 05 CM Q C0 — α s 1 s 1 Oi CNi m CO Q is C0 Honing pad type PU1 — 1 (mass) PU1 — 2 (Quality Parts) PU2-1 Reimbursement) § fr_ mm β -CD (parts by mass) Surface roughness Ra (//m) Duro D hardness / - Ν CM ε Ε δ ΐτττ ! © 1S ill Other composition honing layer Physical properties -44- 201231220 2.6.Chemical mechanical honing test The honing pads listed in Table 4 were attached to a chemical mechanical honing device (model "ΕΡ0-1 1 2" manufactured by Kwaihara Manufacturing Co., Ltd.), and supplied to Table 4 In the chemical mechanical honing water-based dispersion, the honing speed measurement substrate described below was subjected to honing treatment for the following honing conditions, and the honing speed, flatness, and scratching were evaluated by the following methods. The number of marks. The results of these are shown in Table 4. 2.6.1. Evaluation of honing speed (1) Substrate for honing speed measurement • PETEOS with a laminated film thickness of 20,000 angstroms becomes 8 吋矽 substrate (2) Honing conditions • Number of honing head revolutions: l 〇 7 rpm • 硏Grinding head load: 3 00gf/cm2 • Number of revolutions: l〇〇rpm • Supply speed of chemical mechanical honing water dispersion: 200mL/min The supply speed of the so-called chemical mechanical honing water dispersion in this case means The total amount of supply of all feed liquid divided by the time per unit time. (3) Calculation method of honing speed The PETEOS film was measured by the optical interference type film thickness measuring device (manufactured by Nanometric Co., Ltd., model "Nanospec 61 00") to measure the film thickness after honing treatment, and was chemically honed. The honing speed was calculated by reducing the film thickness and honing time. -45 - 201231220 2.6.2 Evaluation of flatness The honing surface of the wafer to which the PETEO S film was attached was measured using an optical interference film thickness measuring device (manufactured by Nanometric Co., Ltd., model "Nanospec 6100"). The film thickness before and after the treatment is expressed as a percentage (%) of the standard deviation (σ) of the difference in film thickness before and after the honing treatment divided by the average enthalpy (A VG ) of the difference in film thickness before and after the honing treatment. The results are shown in Table 4. When the flatness (σ/AVG) was 5% or less, it was judged to be good. 2.6.3. Evaluation of scratches The honed surface of the wafer to which the PETEOS film was attached was subjected to a wafer defect inspection device (manufactured by KLA-Tencor, model "KLA 23 5 1") to measure honing scratches (scraping) Trace) number. The results are listed in Table 4. In Table 4, the number of scratches per wafer is added to the unit of "piece/wafer". The number of scratches was judged to be good at 1 //wafer. -46- 201231220 [inch] 】 CO S16 '· °· 500 in σ> 00 _ 3000 ___ σ> 00 250 inch 00 GO S! 900 5 200 CO Ξ 1600 co ο s eg CO Φ P11 400 ο csi S CO (/) P15 800 inch CO in m 闺Μ S15 2250 CO m CO ο S14 Si 1850 CO CO o σ> S13 κ 1900 00 S12 β 纛卄 '10 2350 a> co ir> CO 卜 S Ρ10 1850 σ> 04 Ιο CNJ CO S10 σ> 1800 00 csi 8 LT) in (/) m • Generic: 2800 ιο CO m CO inch ω U5 1950 Another CO CO U) _ 2400 O) CO in CO CM CM CO 2 2000 CM CO ιο CM •r~ 2 1800 in CO Another chemical mechanical honing water dispersion honing pad honing speed (A/min) Flatness: σ/AVG (%) Scratch (s/wafer) Evaluation result-47- 201231220 2.6.4. Evaluation results According to the chemical mechanical honing method of Example 1~, the honing speed of the PETEOS film is as high as 1,800 angstroms/min or more, and the number of scratches is also suppressed below 35/wafer. The flatness is also good. On the other hand, the surface roughness (Ra) of the honing layer of the honing pad P15 used in Comparative Example 1 exceeded 10. Therefore, the volume of the concave portion of the honing surface of the honing pad P15 becomes large, and the particles falling in the concave portion are relatively insufficient, and it is difficult to cause the retention and retention of the particles, and it is presumed that the honing speed for the PETEOS film is relatively changed. low. The surface roughness (Ra) of the honing layer of the honing pad P11 used in Comparative Example 2 was less than 1. That is, since the honing surface of the honing pad P11 is slightly flat, the honing surface is less likely to cause the retention and retention of the particles, and it is presumed that the honing speed for the PETEOS film is relatively low. The chemical mechanical honing aqueous dispersion used in Comparative Example 3 uses acetic acid which is not a compound having two or more carboxyl groups, so that the interaction between the carboxylic acid and the stanol group on the surface of the ceria particle is insufficient to cause the ceria particle Excessive adsorption on the honing surface. As a result, many scratches occur and a good honed surface cannot be obtained. The chemical mechanical honing water-based dispersion used in Comparative Example 4 has insufficient interaction with the stanol group on the surface of the cerium oxide particle due to the use of glycine acid which is not a compound having two or more carboxyl groups, so that the oxidation is performed. The ruthenium particles are excessively adsorbed on the honing surface. As a result, many scratches occurred and a good honed surface could not be obtained. In the chemical mechanical honing aqueous dispersion used in Comparative Example 5, the Rmax/Rmin of the bismuth-48-201231220 bismuth particles exceeded 1.5. As a result, the resistance of the cerium oxide particles to the honing surface is too strong, the flatness is deteriorated, and a large number of scratching methods are obtained to obtain a good honed surface. The Rmax/Rmin of the cerium particles of the chemical mechanical honing water-based dispersion used in Comparative Example 6 did not reach 1.1. As a result, the resistance of the cerium oxide to the honed surface is too weak, resulting in a sufficient increase in the honing speed of the PETEOS film. From the above results, it can be seen that the use of a chemical mechanical honing aqueous dispersion containing a specific shape of the cerium particles and a honing pad having a honing layer having a special surface roughness (Ra) can be achieved. Performance (high honing speed, high flatness, scratch suppression, etc.). The present invention is not limited to the above embodiments, and various shapes can be made. For example, the present invention includes substantially the same configurations as those described in the embodiments (for example, the functions, methods, and results are the same, and the objects and effects are the same). Further, the present invention includes a configuration in which a non-essential portion of the constitution described in the embodiment is substituted. Further, the present invention has a configuration that has the same function as the configuration described in the embodiment or a configuration that can serve the same purpose. Further, the present invention is embodied in a configuration in which a conventional technique is added to the configuration in the embodiment. [Simple description of the drawing] Fig. 1 is a diagram showing the long and short diameters of the cerium oxide particles. Fig. 2 is a schematic diagram showing the relationship between the long diameter and the short diameter of the cerium oxide particles, and the excellent phase of the epitaxial or morphologically clearing of the te /1 \\ dioxin particle without oxidation. -49-201231220 . Fig. 3 is a schematic view showing the long and short diameters of the ceria particles. Fig. 4 is a cross-sectional view schematically showing the honing pad used in the embodiment. Fig. 5 is an enlarged view of a region I in Fig. 4. Fig. 6 is a plan view schematically showing a honing pad used in the embodiment. Fig. 7 is a plan view schematically showing a honing pad of a first modification. Fig. 8 is a plan view schematically showing a honing pad of a second modification. Fig. 9 is a schematic view for explaining the dying of Duro D hardness in the honing layer. Fig. 1 is a schematic diagram for explaining the surface hardness in the honing layer. [Main component symbol description] 2, 4, 6: cerium oxide particles 1 〇: honing layer 12: support layer 14: honing device Pressure plate 16, 17, 18, 19: recess 2 0: honing surface 40: probe 100, 200 '300: honing pad-50-

Claims (1)

201231220 VII. Application for Patent Park: 1. A chemical mechanical honing method in which a honing pad is fixed on a pressure plate while a chemical mechanical honing water dispersion is supplied to the honing layer of the honing pad. A chemical mechanical honing method for contacting a semiconductor substrate with the honing layer and honing, characterized in that the chemical mechanical honing water-based dispersion comprises (A) a ratio of a long diameter (Rmax) to a short diameter (Rmin) (Rmax/ Rmin) is a cerium oxide particle of 1.1 or more and 1.5 or less, and (B) a compound having two or more carboxyl groups, and the surface roughness (Ra) of the honing layer is in the range of Ιμηι or more and ΙΟμηη or less. 2. The chemical mechanical honing method according to claim 1, wherein the honing layer of the honing pad has a Duro D hardness of 50 D or more and 80 D or less 〇 3. The chemical machine of claim 1 or 2 In the honing method, the surface hardness of the honing layer of the honing pad after immersion in water at 23 ° C for 4 hours is 2 N/mm 2 or more and ΙΟΝ / mm 2 or less. 4. The chemical mechanical honing method according to any one of claims 1 to 3, wherein the average primary particle diameter of the (A) cerium oxide particles contained in the aqueous mechanical honing dispersion is 0.01 μιη or more and 0.1 μmη or less, and the average secondary particle diameter is 0.02 μm or more and 0.3 μm or less. 5. The chemical mechanical honing method according to any one of claims 1 to 4, wherein the chemical mechanical honing aqueous dispersion is measured by a dynamic light scattering type particle size distribution measuring device and the average particle diameter is 0.04 μιη or more -51 - 201231220 and a range of 0.5 μηι or less. 6. The chemical mechanical honing side according to any one of claims 1 to 5, wherein the particle size distribution of the chemical mechanical honing water dispersion is measured by a dynamic light scattering type particle size distribution measuring device. In the middle, the particle diameter (Db) of the highest detection frequency (Fb) is 35 nm < DbS 90 nm, the particle diameter (Da) is 90 nm < the detection frequency (Fa) of the range of DaS 100 nm and the detection frequency (Fb) The ratio (Fa/Fb) is 0.5 or less. 7. The chemical mechanical honing method according to any one of claims 1 to 6, wherein the content of the (A) cerium oxide particles contained in the aqueous mechanical honing dispersion is 0 · 1 The mass% or more and 20% by mass or less. 8. The chemical mechanical honing method according to any one of claims 1 to 7, wherein the compound (B) is oxalic acid, malonic acid, tartaric acid, glutaric acid, malic acid, citric acid and malay At least one of the acids is selected. 9. The chemical mechanical honing method according to any one of claims 1 to 8, wherein the chemical mechanical honing aqueous dispersion further comprises (c) a water-soluble polymer. 10. The chemical mechanical honing method according to any one of claims 1 to 9, wherein the chemical mechanical honing water dispersion further contains (D) an oxidizing agent. -52-