JP2000232082A - Polishing pad and apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a polishing apparatus or pad for use in a mechanically flattening step of smoothing a surface of an insulating or metallic wiring layer formed on a semiconductor substrate by polishing, and also to obtain a technique for uniformly flattening the entire surface of the semiconductor substrate and polishing it with suppressed scratch generation and with superior quality reproducibility. SOLUTION: This polishing pad for polishing a semiconductor substrate includes a polishing layer of a resin composition having a phase separation structure. The polishing apparatus includes the polishing pad provided facing opposite a polishing head, a polishing platen for fixing the polishing pad and a driving device for rotating the polishing head and/or polishing platen. The method for polishing the semiconductor substrate includes the steps of fixing the substrate to the polishing head, and rotating the polishing head and/or polishing platen under a condition in which the pad fixed to the platen is pushed against the substrate.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing apparatus and a polishing pad for a semiconductor substrate, and more particularly to a method for mechanically flattening the surface of an insulating layer formed on a semiconductor substrate such as silicon and the surface of metal wiring. To a polishing apparatus and a polishing pad.

[0002]

2. Description of the Related Art Large-scale integrated circuits (LSI) typified by semiconductor memories have been increasingly integrated year by year, and accordingly, the technology for manufacturing large-scale integrated circuits has been increasing. Further, with the increase in the density, the number of stacked semiconductor device manufacturing locations has also increased. Due to the increase in the number of layers, unevenness of the main surface of the semiconductor wafer caused by stacking, which has not been a problem in the past, has become a problem. As a result, for example, Nikkei Microdevice July 1994 Issue 50
As described on page 57, chemical mechanical polishing (CMP) is performed for the purpose of compensating for a lack of depth of focus at the time of exposure due to unevenness caused by laminating, or for improving wiring density by flattening through holes. : Chemical
The planarization of a semiconductor wafer using a mechanical polishing technique has been studied.

In general, a CMP apparatus includes a polishing head for holding a semiconductor substrate as an object to be processed, a polishing pad for performing a polishing process on the object to be processed, and a polishing platen for holding the polishing pad. Then, in the polishing process of the semiconductor substrate, a protruding portion of the layer on the surface of the semiconductor substrate is removed by moving the semiconductor substrate and the polishing pad relative to each other using a slurry composed of an abrasive and a chemical solution, thereby smoothing the layer on the substrate surface. It is to be. The polishing rate at the time of polishing the semiconductor substrate, for example, in the case of a silicon oxide (SiO2) film formed on one main surface of the semiconductor substrate, is substantially proportional to the relative speed and load between the semiconductor substrate and the polishing pad. Therefore, in order to uniformly polish each part of the semiconductor substrate, it is necessary to make the load applied to the semiconductor substrate uniform.

However, the surface of the semiconductor substrate held by the polishing head often has undulations as a whole due to, for example, the original deformation of the semiconductor substrate such as warpage. for that reason,
In order to uniformly apply a load to each part of the semiconductor substrate, it is desirable to use a soft polishing pad from the viewpoint of bringing the polishing pad into contact with the undulation of the semiconductor substrate as described above. However, when a polishing process for flattening irregularities such as an insulating layer formed on one main surface of a semiconductor substrate is performed using a soft polishing pad, the followability to the undulation of the semiconductor substrate can be improved. Since the polishing pad is deformed following local irregularities on the surface of the semiconductor substrate, not only the convex portions but also the concave portions are polished, and the flatness is deteriorated. On the other hand, when a semiconductor substrate is similarly polished using a hard polishing pad, it is necessary to improve the flatness of local irregularities on the semiconductor substrate surface, contrary to the case of using the above-described soft polishing pad. However, it becomes worse from the viewpoint of followability to the entire undulation of the semiconductor substrate, and it becomes difficult to achieve uniform polishing over the entire semiconductor substrate. Such non-uniform polishing processing exposes the aluminum wiring and the thickness of the silicon oxide insulating film surface after polishing differs from part to part, so that, for example, irregularities in through-hole diameters and unevenness due to lamination cannot be flattened. This causes insufficient depth of focus at the time of exposure.

As a prior art relating to a polishing pad for satisfying the conflicting demands of improving the partial flatness and the overall followability, a two-layer pad disclosed in JP-A-6-21028 has been tried. Was. JP-A-6-210
No. 28, the two-layer pad has a bulk modulus of 4 p.
250 psi / psi over a stress range of si to 20 psi
The polishing layer in direct contact with the semiconductor substrate supported by the cushion layer described below has a larger volume elastic modulus. The purpose is to allow the cushion layer to absorb the entire undulation of the semiconductor substrate, while allowing the polishing layer to withstand a curvature greater than a certain area (eg, greater than the die spacing).

[0006] Here, the polishing layer is to polish only convex portions of local irregularities on the surface of the semiconductor substrate to obtain good flatness, and to achieve uniform polishing over the entire semiconductor substrate (uniformity). ) In addition, the polishing rate represented by the polishing amount per unit time is high, the flatness, uniformity, and polishing rate can be obtained stably, and the polishing does not cause scratches and the like on the semiconductor substrate surface. It is necessary to have the following characteristics.

As a prior art relating to the polishing layer, Japanese Patent Publication No. Hei 8-500622 discloses a polishing layer in which a polymer matrix is uniformly impregnated with polymer microelements having void spaces. Specifically, 4,4′-methylene-bis (2-chloroaniline) (abbreviated name: MOC) is used as a curing agent for the polyether-based urethane prepolymer.
Hard foamed polyurethane obtained by mixing and curing polymer fine particles (microballoons) to obtain a structure having closed cells and A). Since this type of polishing layer has closed cells, the elastic properties of the polishing pad are improved, and as a result, a semiconductor substrate surface having a level of local unevenness that can be practically endured is obtained. The polishing agent is stored in the holes opened in the layer surface, and the polishing agent is effectively supplied to the polishing points of the semiconductor substrate. As a result, a relatively high polishing rate is obtained, and scratches are hardly generated. Because it has the characteristics of
This type of polishing layer is currently widely used for polishing a semiconductor substrate. However, on the other hand, this type of polishing layer has a complex structure and has a step of performing a curing reaction (crosslinking reaction) in the manufacturing method, so it is compared with a resin obtained by melting and molding having the same size and thickness. However, there is considerable variation in the production results, and the quality reproducibility of the obtained polishing layer is not sufficient. Specifically, there is a problem that the polishing rate varies among product lots of the polishing layer. In addition, the polishing layer has pores opened on the surface thereof, so that the abrasive can be effectively supplied.However, as the polishing progresses, the pores of the polishing layer surface are clogged with abrasive particles and semiconductor polishing debris. Also, there is a problem that the polishing rate decreases.

Furthermore, Japanese Patent Publication No. Hei 8-511210 discloses a polishing layer comprising a solid homogeneous polymer sheet having macro and micro grooves formed on the surface. Specifically, a resin sheet having a uniform non-foamed structure made of polyurethane, nylon, or polycarbonate may be used. Since this type of polishing layer has a homogeneous structure, and is manufactured by melting and molding a resin, quality reproducibility is more easily obtained than the above-mentioned polishing layer having a foamed structure. Since there is no opening, there is a small reduction in polishing rate due to clogging of abrasive fine particles and polishing debris.On the other hand, there is a problem that scratches and the like are easily generated on the semiconductor substrate surface due to polishing. It has not yet been put to practical use.

[0009]

DISCLOSURE OF THE INVENTION The present inventors diligently studied a polishing pad including a polishing layer having a non-foamed structure obtained by melting and molding a resin. As a result, a resin composition having a phase-separated structure was obtained. The present invention has found that a polishing pad comprising a polishing layer composed of a polishing layer has good polishing characteristics and generation of scratches is significantly suppressed as compared with a polishing layer composed of a conventionally known homogeneous polymer sheet. Reached.

That is, an object of the present invention is to provide a polishing pad and a polishing apparatus for use in a mechanical flattening step for smoothing the surface of an insulating layer or a metal wiring formed on a semiconductor substrate by polishing. The technology provides a technology for uniformly flattening the entire surface of a semiconductor substrate, and has excellent reproducibility of the polishing pad quality and stability of the polishing rate, and significantly reduces the occurrence of scratches on the polished surface of the semiconductor substrate. An object of the present invention is to provide a polishing pad, a polishing apparatus, and a polishing method in which the polishing pad is suppressed.

[0011]

Means for Solving the Problems As means for solving the problems, the present invention has the following constitution. "(1) a polishing pad for a semiconductor substrate comprising a polishing layer made of a resin composition having a phase separation structure.", "(2) a polishing head, the polishing pad facing the polishing head, and the polishing pad. A polishing table comprising: a polishing platen for fixing the polishing plate; and a driving device for rotating the polishing head and / or the polishing platen. "(3) A polishing platen for fixing the semiconductor substrate to the polishing head. Polishing the semiconductor substrate by rotating the polishing head and / or polishing platen while the polishing pad fixed to the semiconductor substrate is pressed against the semiconductor substrate. " is there.

[0012]

Embodiments of the present invention will be described below. In the present invention, weight means mass.

[0013] The polishing pad of the present invention is characterized by including a polishing layer made of a resin composition having a phase separation structure.
As a resin composition having a phase-separated structure, in a multi-component resin composition obtained by blending two or more polymers or (co) polymers, a heterogeneous polymer forms a multiphase with each other. The resin composition having a non-uniform structure is preferable.
It is preferable that the resin composition is obtained by melt-kneading at least one kind of polymer or (co) polymer. Among them, the use of a resin composition containing rubber is preferred because the mechanical properties of the polishing layer can be adjusted within a preferable range, and the occurrence of scratches can be suppressed.

In the polishing layer of the present invention, a resin composition having a non-uniform structure in which rubber and other resin components are phase-separated is preferably used. The morphology includes those having a sea-island structure in which rubber particles form a dispersed phase in a resin matrix, those having a lamellar structure in which resin and rubber are separated into layers, and among others, the continuous phase is a resin matrix, Those having a sea-island structure in which the phase is rubber particles are preferred. Here, the rubber particles refer to a polymer or a (co) polymer having a rubbery polymer as a main component, and the shape of the particles is not particularly limited, but is preferably spherical or oval. Further, the rubber particle diameter is not particularly limited, but preferably has a number average particle diameter of 0.1 to 100 μm, more preferably 0.1 to 10 μm, and particularly preferably 0.2 to 5 μm. The number average particle diameter of the rubber particles can be determined by digital image analysis of an image observed with an optical microscope, a transmission electron microscope, a scanning electron microscope, a phase contrast microscope, or the like.

The rubber used in the present invention preferably has a glass transition temperature of 0 ° C. or less, and specifically includes butadiene rubber, styrene-butadiene copolymer, acrylonitrile-butadiene copolymer, and styrene-butadiene. Block copolymer, diene rubber such as butyl acrylate-butadiene copolymer, acrylic rubber such as polybutyl acrylate, natural rubber, grafted natural rubber, natural trans-polyisoprene, chloroprene rubber, polyisoprene rubber, Ethylene-propylene copolymer, ethylene-propylene-diene-based terpolymer, ethylene-
Examples include acrylic copolymer, chlorosulfonated rubber, epichlorohydrin rubber, epichlorohydrin-ethylene oxide copolymer, polyether urethane rubber, polyester urethane rubber, nitrile rubber, butyl rubber, silicone rubber, and fluoro rubber. Among them, diene rubbers such as butadiene rubber or butadiene copolymer, ethylene-propylene copolymer, ethylene-propylene-
Olefin rubbers such as diene terpolymers are preferred.

It is desirable that the rubber particles are uniformly dispersed in the resin matrix which is a continuous phase. For this purpose, the rubbery polymer contains a monomer constituting the resin matrix or a polymer containing the monomer or a copolymer thereof (co). Polymer grafted, or other rubbery polymer epoxy group,
Isocyanate group, acid halide, carboxylic acid group, acid anhydride group, amide group, amino group, imino group, nitrile group,
It is preferably modified with a monomer having at least one functional group such as an aldehyde group, a hydroxyl group and an ester group.

In the resin composition, a resin component other than rubber is usually contained, and as such a material, either a thermoplastic resin or a thermosetting resin can be used. Among them,
Thermoplastic resins are preferred in terms of moldability of the polishing layer, quality stability and the like.Specifically, polyolefin resins, polystyrene resins, polyacrylic resins such as polymethyl methacrylate and polyacrylonitrile, polyvinyl chloride and the like Polyvinyl halide resins, polyvinylidene halide resins such as polyvinylidene fluoride and polyvinylidene chloride, polytetrahalogenated ethylene resins such as polytetrafluoroethylene, polyoxyalkylene resins such as polyoxymethylene, polyamide resins Polyester resins such as polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polycarbonate resins, polyvinyl alkyl ether resins such as polyvinyl methyl ether, polyvinyl acetate resins Polyurethane resin, polysulfone resin, polyphenylene sulfide resin, thermoplastic resins such as polyarylate resins. Among these, polystyrene-based resins, polyamide-based resins, polyester-based resins, and polyolefin-based resins are more preferable in the present invention from the viewpoint of mechanical properties.

The polishing layer of the present invention is preferably made of a resin composition having a non-uniform structure in which rubber particles are dispersed in a matrix of the above resin. The resin composition is not particularly limited as long as it is a resin composition having a non-uniform structure. As a preferred specific example, a high impact polystyrene (HI-PS) is used as a resin composition in which rubber particles are dispersed in a polystyrene resin matrix. ), Acrylonitrile-butadiene-
Resin composition containing styrene copolymer (ABS resin), resin composition containing acrylonitrile-acryl rubber-styrene copolymer (AAS resin), resin composition containing acrylonitrile-ethylene propylene rubber-styrene copolymer (AES Resin), a resin composition containing a methyl methacrylate-butadiene-styrene copolymer (MBS resin),
A resin composition containing a rubber-reinforced styrene resin, such as a resin composition (ACS resin) containing an acrylonitrile-chlorinated polyethylene-styrene copolymer, may be mentioned. As a resin composition in which rubber particles are dispersed in a polyolefin resin matrix, a resin composition in which an olefin rubber is dispersed in a resin containing polyethylene, a resin composition in which an olefin rubber is dispersed in a resin containing polypropylene, polypropylene-polyethylene A resin composition in which an olefin-based rubber is dispersed in a resin containing a copolymer may be used. Examples of the resin composition in which rubber particles are dispersed in a polyamide resin matrix include a resin composition in which a resin containing polyamide and an olefin rubber modified with maleic anhydride are dispersed. As polyamide, nylon 6, nylon 8, nylon 11, nylon 12, nylon 66,
Nylon 68, nylon 610, and the like. As a resin composition in which rubber particles are dispersed in a polyester-based resin, a resin composition in which a resin containing polyester and a methacrylate containing a glycidyl group modified in a polyolefin-based rubber is dispersed. Examples of the polyester include polyethylene terephthalate and polybutylene terephthalate. Further, a resin composition in which an acrylonitrile-butadiene copolymer is dispersed in a polyvinyl chloride resin, butyl acrylate-styrene copolymer, or butyl acrylate-butadiene copolymer is dispersed in an acrylic resin such as polymethyl methacrylate. Resin compositions. Among these resin compositions,
In particular, a resin composition containing a rubber-reinforced styrene resin,
Since the generation of scratches such as scratches is greatly suppressed and favorable polishing characteristics are provided, it is more suitably used.

(A) As the rubber-reinforced styrene resin,
A structure in which a (co) polymer containing a styrene monomer is grafted on a rubbery polymer and a structure in which a (co) polymer containing a styrene monomer is not grafted on a rubbery polymer It includes the ones taken. Specifically, (a1)
It is obtained by graft polymerization of 95 to 20 parts by weight of a monomer or monomer mixture containing 20% by weight or more of (a2) an aromatic vinyl monomer to 5 to 80 parts by weight of a rubbery polymer (A
1) 5 to 100% by weight of a graft (co) polymer and (a3)
A (A2) vinyl (co) polymer obtained by polymerizing a monomer or a monomer mixture containing an aromatic vinyl monomer in an amount of 20% by weight or more is preferably from 0 to 95% by weight. is there.

As the rubbery polymer (a1), those having a glass transition temperature of 0 ° C. or less are suitable, and diene rubbers are preferably used. Specifically, polybutadiene,
Styrene-butadiene copolymer, acrylonitrile-butadiene copolymer, styrene-butadiene block copolymer, diene rubber such as butyl acrylate-butadiene copolymer, acrylic rubber such as polybutyl acrylate, polyisoprene, An ethylene-propylene-diene-based terpolymer is exemplified. Among them, polybutadiene or butadiene copolymer is preferred.

The rubber particle diameter of the rubbery polymer is not particularly limited, but the weight average particle diameter of the rubber particles is 0.1 to 10 μm.
m, particularly preferably 0.2 to 5 μm. The average weight particle diameter of the rubber particles is “Rubber Age Vo”.
l. 88 p. 484-490 (1960) by E.E.
Schmidt, P .; H. Sodium alginate method described in "Biddison" (using the fact that the particle size of polybutadiene to be creamed varies depending on the concentration of sodium alginate, the particles having a cumulative weight fraction of 50% from the cumulative weight fraction of the creamed weight ratio and the sodium alginate concentration) The diameter of the rubber particles can be determined with an optical microscope,
Images obtained by a transmission electron microscope, a scanning electron microscope, and a phase contrast microscope can be obtained by digital image analysis.

(A2) Examples of the aromatic vinyl monomer include styrene, α-methylstyrene, vinyltoluene, o-ethylstyrene, pt-butylstyrene, etc., with styrene being particularly preferred.

The monomers other than the aromatic vinyl monomers include vinyl cyanide monomers from the viewpoint of mechanical properties,
(Meth) acrylate monomers are preferably used. Examples of the vinyl cyanide-based monomer include acrylonitrile, methacrylonitrile, ethacrylonitrile, and the like, and acrylonitrile is particularly preferable. Examples of the (meth) acrylate-based monomer include methyl and ethyl esters of acrylic acid and methacrylic acid with ethyl, propyl, n-butyl and i-butyl. Particularly, methyl methacrylate is preferred. If necessary, other vinyl monomers, for example, maleimide monomers such as maleimide, N-methylmaleimide, and N-phenylmaleimide can also be used.

(A1) The monomer or monomer mixture used in the graft (co) polymer is preferably at least 20% by weight of an aromatic vinyl monomer from the viewpoint of the mechanical properties of the resin composition. It is preferably at least 50% by weight. When a vinyl cyanide-based monomer is mixed, the amount is preferably 60% by weight or less, and more preferably 50% by weight or less, from the viewpoint of the mechanical properties and moldability of the resin composition. When a (meth) acrylate monomer is mixed, the content is preferably 80% by weight or less, and more preferably 75% by weight or less.
% By weight or less is preferably used. The total amount of the aromatic vinyl-based monomer, vinyl cyanide-based monomer and (meth) acrylate-based monomer in the monomer or monomer mixture is preferably 95 to 20% by weight, and Preferably it is 90 to 30% by weight.

(A1) The ratio of the rubbery polymer to the monomer mixture in obtaining the graft (co) polymer is preferably at least 5 parts by weight of the rubbery polymer based on 100 parts by weight of the total graft copolymer. The amount is more preferably 10 parts by weight or more, and 80 parts by weight or less, more preferably 70 parts by weight or less, so as not to impair the appearance of the molded article. The amount of the monomer or monomer mixture is preferably at most 95 parts by weight, more preferably at most 90 parts by weight, at least 20 parts by weight, even more preferably at least 30 parts by weight.

The (A1) graft (co) polymer can be obtained by a known polymerization method. For example, it can be obtained by a method in which a mixture of a monomer and a chain transfer agent and a solution of a radical generator dissolved in an emulsifier are continuously supplied to a polymerization vessel in the presence of a rubbery polymer latex to carry out emulsion polymerization.

(A1) The graft (co) polymer contains a non-grafted copolymer in addition to a material having a structure in which a monomer or a monomer mixture is grafted on a rubbery polymer. It is. The graft ratio of the (A) graft (co) polymer is not particularly limited, but is preferably 20 to 200% by weight, particularly preferably 25 to 100% by weight. Here, the graft ratio is calculated by the following equation. Graft ratio (%) = <amount of vinyl copolymer graft-polymerized on rubbery polymer> / <rubber content of graft copolymer> × 100 The characteristics of the ungrafted (co) polymer are particularly limited. The intrinsic viscosity [η] (measured at 30 ° C.) of the methyl ethyl ketone-soluble component is 0.25 to 0.80 dl /
g, and particularly preferably in the range of 0.25 to 0.60 dl / g.

The (A2) vinyl (co) polymer is a copolymer (a3) containing an aromatic vinyl monomer as an essential component. Examples of the aromatic vinyl monomer include styrene, α-methylstyrene, p-methylstyrene, t-butylstyrene, vinyltoluene, o-ethylstyrene, and the like, with styrene being particularly preferred. One or more of these can be used.

As a monomer other than the aromatic vinyl monomer, a vinyl cyanide monomer or a (meth) acrylate monomer is preferably used. Examples of the vinyl cyanide-based monomer include acrylonitrile, methacrylonitrile, ethacrylonitrile, and the like, and acrylonitrile is particularly preferable. Examples of the (meth) acrylate-based monomer include methyl and ethyl esters of acrylic acid and methacrylic acid with ethyl, propyl, n-butyl and i-butyl. Particularly, methyl methacrylate is preferred. Further, if necessary, other vinyl monomers copolymerizable therewith can be used. For example, maleimide, N-methylmaleimide, N-
Using a maleimide monomer such as phenylmaleimide to improve the heat resistance and flame retardancy of the resin composition, the carboxyl group of acrylic acid, methacrylic acid, maleic acid, maleic anhydride, phthalic acid, itaconic acid, etc. Vinyl monomer containing epoxy group such as glycidyl acrylate, glycidyl methacrylate, glycidyl ethacrylate, glycidyl itaconate, allyl glycidyl ether, styrene-p-glycidyl ether, p-glycidyl styrene, etc. Body, aminoethyl acrylate, dimethylaminoethyl methacrylate, phenylaminoethyl methacrylate, cyclohexylaminoethyl methacrylate, N-vinyldiethylamine, N-acetylvinylamine, allylamine, methallylamine, N-
Methylallylamine, acrylamide, methacrylamide, N-methylacrylamide, butoxymethylacrylamide, N-propylmethacrylamide, vinyl monomers having an amino group or a substituted amino group such as styrene having an amino group bonded to a benzene ring, acrylic acid 2-hydroxyethyl, 2-hydroxyethyl methacrylate,
3-hydroxypropyl acrylate, 3-methacrylic acid
Hydroxypropyl, acrylic acid 2,3,4,5,6-
Pentahydroxyhexyl, 2,3,4, methacrylic acid
5,6-pentahydroxyhexyl, acrylic acid 2,
3,4,5-tetrahydroxypentyl, 2,3,4,5-tetrahydroxypentyl methacrylate, 3-hydroxy-1-propene, 4-hydroxy-1-butene,
Cis-4-hydroxy-2-butene, trans-4-hydroxy-2-butene, 3-hydroxy-2-methyl-
Vinyl monomers having a hydroxyl group such as 1-propene and 1,4-dihydroxy-2-butene, 2-propenyl-2-oxazoline, ethenyl-2-oxazoline, 2- (1-butenyl) -2-oxazoline By using a vinyl monomer having a functional group such as a vinyl monomer having an oxazoline group, the mechanical properties, flame retardancy and antistatic properties of the resin composition can be improved.

From the viewpoint of the mechanical properties of the resin composition, the ratio of the (a3) aromatic vinyl monomer, which is a constituent component of the (A2) vinyl (co) polymer, is 20% by weight based on all monomers. %
The content is preferably at least 50% by weight. When a vinyl cyanide monomer is mixed, the content is preferably 60% by weight or less, more preferably 50% by weight or less, from the viewpoint of mechanical properties and fluidity. When a (meth) acrylate monomer is mixed, the amount is preferably 80% by weight or less, and more preferably 75% by weight or less. When other vinyl monomers copolymerizable therewith are mixed, the content is preferably 60% by weight or less, more preferably 50% by weight or less.

(A2) The properties of the vinyl (co) polymer are not limited, but the intrinsic viscosity [η] (methyl ethyl ketone solvent, measured at 30 ° C.) is 0.40 to 0.80 dl / g, particularly 0.45 dl / g. ０．６0.60 dl / g, N, N-dimethylformamide solvent, when measured at 30 ° C., 0.35 to 0.85 dl / g, particularly 0.45 to
Those having a range of 0.70 dl / g are preferable because a resin composition having excellent mechanical properties and moldability can be obtained.

(A2) The method for producing the vinyl (co) polymer is not particularly limited, and may be a conventional method such as bulk polymerization, suspension polymerization, emulsion polymerization, bulk-suspension polymerization, and solution-bulk polymerization. A method can be used.

In a resin composition containing a rubber-reinforced styrenic resin, a rubber-reinforced styrenic resin and a different resin are blended to improve mechanical properties, impart antistatic properties, and provide abrasion resistance and high slidability. Improved mobility and improved chemical resistance. Examples of such resins include polyolefin resins, polyvinyl halide resins such as polyvinyl chloride, polyvinylidene fluoride resins such as polyvinylidene fluoride and polyvinylidene chloride, and polytetrahalogenated ethylene resins such as polytetrafluoroethylene. ,
Polyoxyalkylene resins such as polyoxymethylene, polyamide resins, polyoxyalkylene-polyamide copolymer resins, polyethylene terephthalate, polybutylene terephthalate, polyester resins such as polyethylene naphthalate, polycarbonate resins,
Examples thereof include polyvinyl alkyl ether resins such as polyvinyl methyl ether, polyvinyl acetate resins, polyurethane resins, polysulfone resins, polyphenylene sulfide resins, polyarylate resins, and silicone resins.

In the resin composition containing a rubber-reinforced styrene resin, if the content of the resin other than the rubber-reinforced styrene resin is too small, the desired properties cannot be improved. From the viewpoint of impairing the characteristics of the system resin, the content is preferably 1 to 60% by weight, more preferably 5 to 50% by weight of the resin composition, and it is preferable to mix them according to the purpose.

The content of the rubber in the resin composition to be the polishing layer of the present invention needs to take into consideration the mechanical properties of the obtained polishing layer. The hardness and elastic modulus of the layer decrease. The hardness of the polishing layer is preferably such that the Shore durometer hardness D is in the range of 40 to 90. If the hardness is low, the flatness of the local unevenness of the semiconductor substrate becomes poor. There is a tendency that scratches are easily generated on the surface. More preferably, the hardness is 55 to 85.
Gives more preferable polishing characteristics. The elastic modulus of the polishing layer is 100 as the flexural modulus measured by the bending test method for hard plastics described in JIS K7203.
When the flexural modulus is small, the flatness of the local unevenness of the semiconductor substrate is poor, and when the flexural modulus is large, the followability of the semiconductor substrate to the undulation is reduced and the entire substrate is reduced. Tends to be unable to achieve uniform flatness. More preferably, the flexural modulus is from 300 to 3000 MPa to give more preferable polishing characteristics. The content of the rubber in the resin composition is determined in consideration of the mechanical properties of the polishing layer.
It is in the range of 80% by weight, more preferably 10 to 40% by weight.

The polishing layer of the present invention may be a composition obtained by previously kneading a mixture of a resin matrix and rubber particles, or a composition obtained by polymerizing a resin in the presence of rubber particles with a hot blender or an extruder, or a resin matrix. The mixture obtained by mixing the rubber particles with the rubber particles in a mill can be obtained by molding a resin sheet with an injection molding machine, an injection press molding machine, an extrusion molding machine, or the like, to a desired size as required.

If the thickness of the polishing layer is too small, the mechanical properties of the cushion layer preferably used as a base of the polishing layer or the polishing plate located thereunder are lower than the mechanical properties of the polishing layer itself. When the thickness is too large, the mechanical properties of the cushion layer are not reflected, and the following property of the semiconductor substrate against the undulation is reduced, so that the flatness of the entire substrate cannot be uniform. Therefore, the thickness of the polishing layer of the present invention is preferably in the range of 0.3 to 5 mm, more preferably in the range of 0.5 to 3 mm, and even more preferably in the range of 0.5 to 1.5 mm.

The polishing layer of the present invention is preferably provided with grooves or holes on the surface for the purpose of promoting the supply of the polishing agent to the polishing surface in contact with the semiconductor substrate and the discharge thereof therefrom. . As the shape of the groove, various shapes such as concentric circles, spirals, radiation, and grids can be adopted. As the cross-sectional shape of the groove, a shape such as a square, a triangle, and a semicircle can be adopted. The groove depth ranges from 0.1 mm to the thickness of the polishing layer, the groove width ranges from 0.1 to 5 mm, and the groove pitch ranges from 2 to 100 m.
m. The holes may or may not penetrate the polishing layer. The diameter of the hole is 0.
It can be selected in the range of 2 to 5 mm. The pitch of the holes can be selected in the range of 2 to 100 mm.

In the present invention, it is preferable to provide a cushion pad together with the above-mentioned polishing layer to form a polishing pad.

For the cushion layer in the present invention, besides a nonwoven fabric impregnated with polyurethane which is generally used at present (for example, Suba400 (trade name, manufactured by Rodale)), rubber, foamed elastic material, foamed plastic, etc. may be used. Although not particularly limited, the bulk modulus is 60 MPa or more and the tensile modulus is 0.1 to 20 MPa
A cushion layer having the characteristic of a is preferred. If the tensile modulus is low, the uniformity of the flatness over the entire surface of the semiconductor substrate tends to be impaired. Even when the tensile modulus is large, the uniformity of the flatness over the entire surface of the semiconductor substrate tends to be impaired. A more preferable range of the tensile modulus is 0.5 to 10 MPa.
It is.

Here, the term "bulk elastic modulus" refers to a change in volume of an object whose volume has been measured in advance by applying an isotropic applied pressure to the measured object. It is defined as bulk modulus = applied pressure / (volume change / original volume). For example, if the original volume is 1
cm ³ , and isotropically applied pressure of 0.07MP
If the change in volume when a is applied is 0.00005 cm ³ , the bulk modulus is 1400 MPa. As one method of measuring the bulk modulus, for example, the volume of an object to be measured is measured in advance, then the object to be measured is immersed in water placed in a container, the container is placed in a pressure vessel, and the applied pressure is increased. In addition, there is a method of measuring a change in volume of an object to be measured and an applied pressure from a change in the height of water in a container inside. The liquid to be immersed is preferably one that does not swell or destroy the object to be measured, and is not particularly limited as long as it is a liquid, and examples thereof include water, mercury, and silicon oil.
The tensile modulus is determined by applying a tensile stress to a cushion layer in a dumbbell shape and applying a tensile strain (= change in tensile length /
Tensile stress was measured in the range of 0.01 to 0.03 of the original length, and the tensile modulus = (((tensile strain was 0.03 to 0.03)).
Tensile stress at the time) − (tensile stress at a tensile strain of 0.01)) / 0.02.

Rubber is an example of a component constituting the cushion layer having such characteristics. Specifically, natural rubber,
Nitrile rubber, neoprene rubber, polybutadiene rubber,
Non-foamed elastomers such as polyurethane rubber and silicone rubber can be used, but are not particularly limited thereto. The preferred thickness of the cushion layer is 0.1 to
The range is 100 mm. If the thickness is small, the uniformity of the flatness over the entire surface of the semiconductor substrate (uniformity) tends to be impaired. Conversely, when the thickness is large, local flatness tends to be impaired. A more preferable range of the thickness is 0.2 to 5 mm. A more preferred range is 0.
5 to 2 mm.

The polishing pad of the present invention is used by being fixed to a polishing platen. At this time, it is necessary to fix the cushion layer from the polishing platen so as not to shift during polishing, and to fix the polishing layer from shifting from the cushion layer. Examples of the method of fixing the polishing platen and the cushion layer include a method of fixing with a double-sided adhesive tape, a method of fixing with an adhesive, and a method of fixing the cushion layer by suctioning from the polishing platen, but are particularly limited. is not. As a method of fixing the cushion layer and the polishing layer, a method of fixing with a double-sided adhesive tape, a method of fixing with an adhesive, and the like can be considered, but are not particularly limited. Preferred as a double-sided adhesive tape or an adhesive layer for bonding the polishing layer and the cushion layer are double-sided adhesive tapes 463, 465 and 92 manufactured by Sumitomo 3M Co., Ltd.
04, double-sided adhesive tape No. of Nitto Denko Corporation. 591
Acrylic adhesive transfer tape without base material such as Sumitomo 3M
Specific examples thereof include a double-sided adhesive tape based on a foamed sheet such as Y-4913 and a soft vinyl chloride-based base such as 447DL from Sumitomo 3M.

In the present invention, when it is necessary to replace the polishing layer after polishing because the polishing rate cannot be obtained, the polishing layer is removed from the cushion layer with the cushion layer fixed to the polishing platen. It is also possible to exchange. Since the cushion layer is more durable than the polishing layer,
Replacing only the polishing layer is preferable in terms of cost.

Hereinafter, a method for polishing a semiconductor substrate using the polishing pad of the present invention will be described.

By using the polishing pad of the present invention, using a silica-based polishing agent, an aluminum oxide-based polishing agent, a cerium oxide-based polishing agent, or the like as a polishing agent, the unevenness of the insulating film and the unevenness of the metal wiring on the semiconductor substrate are reduced. It can be planarized. First, a polishing apparatus having a polishing head, a polishing platen for fixing a polishing pad, and a means for rotating the polishing head, the polishing platen or both of them is prepared. Then, the polishing pad of the present invention is fixed to the polishing platen of the polishing apparatus so that the polishing layer faces the polishing head. The semiconductor substrate is fixed to the polishing head by a method such as a vacuum chuck. The polishing table is rotated, and the polishing head is rotated in the same direction as the rotation of the polishing table, and pressed against the polishing pad. At this time, the polishing agent is supplied from a position where the polishing agent enters between the polishing pad and the semiconductor substrate. The pressing pressure is usually performed by controlling the force applied to the polishing head. As the pressing pressure, 0.01 to 0.2 MPa is preferable because local flatness can be obtained.

In the method of polishing a semiconductor substrate using the polishing pad of the present invention, the surface of the polishing layer is roughened using a conditioner before polishing the semiconductor substrate, in order to obtain good polishing characteristics. It is preferably implemented. The conditioner is a wheel to which diamond abrasive grains are electrodeposited and fixed. For example, a conditioner model name CMP-M, CMP-N, or CMP-L of Asahi Diamond Industrial Co., Ltd. is given as a specific example. be able to. The particle size of diamond abrasive is from 10μm to 300μm
You can choose from a range. The pressing pressure of the conditioner is arbitrarily selected in the range of 0.005 MPa to 0.2 MPa. It is preferable to condition the polishing pad using a conditioner even after one or more polishing operations are completed in order to stabilize the polishing rate.

The surface roughness of the polishing layer after conditioning gives a polishing rate that preferably has a center line average roughness Ra in the range of 1 to 15 μm, Ra is 2 to 7 μm, and Ra is 3 to 6 μm. Is preferable because the generation of scratches can be significantly suppressed. The center line average roughness Ra can be measured using a stylus type surface roughness meter.

According to the polishing apparatus and the polishing pad of the present invention, flatness can be obtained by polishing only the convex portions of the unevenness on the semiconductor substrate, and the uniformity (uniformity) of the entire surface of the semiconductor substrate can be improved. In addition, a high and stable polishing rate can be obtained, and polishing can be performed without causing scratches or the like on the surface of the semiconductor substrate.

[0050]

The present invention will be described below in further detail with reference to examples. In the present invention, “parts” means “parts by weight”, and “%” means “% by weight”. Example 1 As rubber particles, a powdery graft copolymer comprising 60 parts (in terms of solid content) of polybutadiene latex (average rubber particle diameter 0.3 μm, gel content 82%), styrene 29 parts and acrylonitrile 11 parts was used. A vinyl copolymer obtained by suspension polymerization of a monomer mixture composed of 72% of styrene and 28% of acrylonitrile as a resin matrix is melt-kneaded at a blend ratio where the rubber content is 20% by weight, and pelletized. Using the extruded product, a sheet of ABS resin having a thickness of 1 mm was produced by an extruder. As a result of observing this sheet with a transmission electron microscope, it was confirmed that the sheet had a sea-island structure in which rubber particles were dispersed in a resin phase. The sheet had a flexural modulus of 2000 MPa and a Shore durometer hardness D of 77. This sheet was cut into a circle having a diameter of 30 cm, and the surface thereof was subjected to groove processing in a grid pattern with a width of 2 mm, a depth of 0.5 mm, and a pitch width of 1.5 cm to produce a polishing layer.

Next, a nitrile rubber (volume modulus = 140 MPa, tensile modulus = 4.5 MPa) having a thickness of 1 mm as the cushion layer and the polishing layer were combined with a double-sided adhesive tape No. At 591, a polishing pad was prepared.

Next, the polishing pad was placed on a polishing platen by Sumitomo 3M.
Bonded with double-sided adhesive tape 442J (double-sided adhesive tape based on polyester film) of Asahi Diamond Industry Co., Ltd. Model name CM
Using a PM (diameter 14.2 cm), a pressing pressure of 0.
The polishing pad was rotated in the same direction as the polishing platen at 04 MPa, a polishing platen rotation speed of 24 rpm, and a conditioner rotation speed of 24 rpm, and the polishing pad was conditioned for 3 minutes while supplying pure water at 10 ml / min.

Next, 0.2 μm on a 4-inch silicon wafer
Al wirings having a width of 5 μm and a height of 1.2 μm are formed at an interval of 0.5 mm, and further, tetraethoxysilane is further
A semiconductor substrate having an insulating film formed by VD so as to have a thickness of 3 μm was prepared. The unevenness of the surface of the insulating film on the semiconductor substrate before polishing is 11,000 angstroms at the center of the wafer and 11000, 1150 at four peripheral portions.
0, 11200 and 11400 angstroms. This semiconductor substrate is attached to a polishing head of a polishing machine and 3
At 6 rpm, the polishing platen on which the polishing pad is fixed is rotated at 36 rpm in the same direction as the rotation direction of the polishing head, and polishing is performed at a polishing pressure of 0.04 MPa for 10 minutes while supplying a silica-based polishing agent at 50 ml / min. Carried out.
The unevenness of the surface of the insulating film on the semiconductor substrate after polishing was 170 angstroms at the central portion of the wafer and 140, 180, 150, and 160 angstroms at four peripheral portions. The thickness of the insulating film at the center of the wafer is 1.6 μm.
m, and the thickness of the insulating film 3 mm from the wafer edge was 1.5 μm. As described above, uniformity of flatness over the entire surface of the 4-inch semiconductor substrate is obtained, and uniform polishing is achieved near the wafer edge. No scratches were observed on the surface of the semiconductor substrate. Example 2 A 1.2 mm thick wet foamed polyurethane (bulk modulus = 3 MPa, tensile modulus = 50 MPa) obtained by impregnating a nonwoven fabric with a polyurethane solution as a cushion layer and the same polishing layer as in Example 1 with Sumitomo 3M A polishing pad was prepared by bonding together using a double-sided adhesive tape 442J (double-sided adhesive tape having a polyester film as a base material) manufactured by K.K. The conditioning method of the polishing pad and the polishing method of the semiconductor substrate were performed under the same conditions as in Example 1.

The unevenness of the surface of the insulating film on the semiconductor substrate after polishing was 240 angstroms at the center of the wafer and 280, 260, 2900, and 270 angstroms at four peripheral portions. The thickness of the insulating film at the center of the wafer was 1.5 μm, and the thickness of the insulating film 3 mm from the wafer edge was 1.4 μm. As described above, uniformity of flatness over the entire surface of the 4-inch semiconductor substrate is obtained, and uniform polishing is achieved near the wafer edge. No scratches were observed on the surface of the semiconductor substrate. Example 3 In Example 1, a sheet of ABS resin was produced at a blend ratio of 40% by weight of the rubber content. As a result of observing this sheet with a transmission electron microscope, it was confirmed that the sheet had a sea-island structure in which rubber particles were dispersed in a resin phase. The sheet has a flexural modulus of 800 MPa and a Shore durometer hardness D
Was 66. Method for producing polishing layer and polishing pad,
The conditioning method of the polishing pad and the polishing method of the semiconductor substrate were performed under the same conditions as in Example 1.

The unevenness of the surface of the insulating film on the semiconductor substrate after polishing was 190 angstroms at the central portion of the wafer and 240, 190, 160 and 230 angstroms at four peripheral portions. The thickness of the insulating film at the center of the wafer was 1.4 μm, and the thickness of the insulating film 3 mm from the wafer edge was 1.4 μm. As described above, uniformity of flatness over the entire surface of the 4-inch semiconductor substrate is obtained, and uniform polishing is achieved near the wafer edge. Also,
No scratches were observed on the surface of the semiconductor substrate. Example 4 In Example 1, 50 parts by weight of the average rubber particle diameter of 0.3 μm of the polybutadiene latex was 50 parts by weight.
10 parts by weight of 0 μm (in terms of solid content), 29 parts of styrene,
A powdery graft copolymer comprising 11 parts of acrylonitrile, and styrene 72 as a resin matrix.
% And acrylonitrile 28%, a vinyl-based copolymer obtained by suspension polymerization was used to prepare an ABS resin sheet at a blend ratio where the rubber content was 20% by weight. As a result of observing this sheet with a transmission electron microscope, it was confirmed that the sheet had a sea-island structure in which rubber particles were dispersed in a resin phase. The sheet had a flexural modulus of 1800 MPa and a Shore durometer hardness D of 80. A method for manufacturing a polishing layer and a polishing pad, a method for conditioning a polishing pad, and a method for polishing a semiconductor substrate were performed under the same conditions as in Example 1.

The unevenness of the surface of the insulating film on the semiconductor substrate after polishing was 180 angstroms at the center of the wafer and 200, 190, 230, and 170 angstroms at four peripheral portions. The thickness of the insulating film at the center of the wafer was 1.5 μm, and the thickness of the insulating film 3 mm from the wafer edge was 1.4 μm. As described above, uniformity of flatness over the entire surface of the 4-inch semiconductor substrate is obtained, and uniform polishing is achieved near the wafer edge. Also,
No scratches were observed on the surface of the semiconductor substrate. Comparative Example 1 78 parts by weight of a polyether-based urethane polymer (Adiprene L-325 manufactured by Uniroyal) and 4,4'-methylene-
Bis-2-chloroaniline 20 parts by weight and hollow polymer microspheres (Expancel 551 DE manufactured by Chemo Nobel)
1.8 parts by weight were mixed with a RIM molding machine and discharged into a mold to produce a polymer molded body. This polymer molded body was sliced to a thickness of 1.2 mm with a slicer to produce a hard foamed polyurethane sheet, and the same groove processing as in Example 1 was performed to produce a polishing layer. Shore durometer hardness D of the polishing layer
Was 58, the density was 0.80, and the average diameter of the closed cells was 33 μm. The flexural modulus was 350 MPa. Next, a polishing pad was prepared in the same manner as in Example 2, and the conditioning method for the polishing pad was performed under the same conditions as in Example 1. In addition, the polishing method for a semiconductor substrate was performed except that the polishing time was changed to 9 minutes. Performed under the same conditions as in Example 1.

The unevenness of the surface of the insulating film on the semiconductor substrate after polishing was 280 Å at the center of the wafer and 330, 250, 340 and 300 Å at four peripheral portions. The thickness of the insulating film at the center of the wafer was 1.5 μm, and the thickness of the insulating film 3 mm from the wafer edge was 1.4 μm. Comparative Example 2 Thickness obtained by slicing from the same polymer molded body as in Comparative Example 1.
2mm, Shore durometer hardness D is 61, density is 0.
70, closed cell average diameter is 29 μm, flexural modulus is 420
A polishing pad was prepared and the polishing pad was conditioned in the same manner as in Comparative Example 1 using a rigid foamed polyurethane sheet of MPa. Next, the semiconductor substrate was polished in the same manner as in Comparative Example 1. It takes 11 minutes for the polishing time to reach the same level of the unevenness of the insulating film surface on the semiconductor substrate after polishing as in Comparative Example 1, and when combined with Comparative Example 1, the polishing rate may vary. Understand. Comparative Example 3 In Comparative Example 1, a polymer molded body was produced without adding a hollow polymer microsphere. This polymer molded body was sliced with a slicer to a thickness of 1.2 mm to produce a non-foamed hard polyurethane sheet. The sheet had a flexural modulus of 1250 MPa and a Shore durometer hardness D of 75. The same groove processing as in Example 1 was performed to produce a polishing layer. The conditioning method of the polishing pad and the polishing method of the semiconductor substrate were performed under the same conditions as in Example 1.

The unevenness of the surface of the insulating film on the semiconductor substrate after polishing was 480 angstroms at the central portion of the wafer, and 430, 490, 520 and 350 angstroms at four peripheral portions. The thickness of the insulating film at the center of the wafer was 1.6 μm, and the thickness of the insulating film 3 mm from the edge of the wafer was 1.3 μm. On the semiconductor substrate after polishing, a width of 30 to 50 μm, a depth of 0.05 to 0.1 μm,
Many scratches with a length of 65 to 2540 μm were observed. Comparative Example 4 A polishing layer and a polishing pad were produced from a commercially available 1 mm thick polycarbonate resin sheet in the same manner as in Example 1. The flexural modulus of this sheet was 2100 MPa.
The Shore durometer hardness D was 78. A polishing layer and a polishing pad were prepared in the same manner as in Example 1, and a conditioning method of the polishing pad and a polishing method of the semiconductor substrate were performed under the same conditions as in Example 1.

The unevenness of the surface of the insulating film on the semiconductor substrate after polishing was 360 Å at the center of the wafer and 330, 290, 420 and 450 Å at four peripheral portions. The thickness of the insulating film at the center of the wafer was 1.6 μm, and the thickness of the insulating film 3 mm from the wafer edge was 1.2 μm. On the polished semiconductor substrate, a width of 30 to 50 μm and a depth of 0.03 to 0.05 μm
m, many scratches with a length of 65 to 1340 μm were observed. Comparative Example 5 A polishing layer and a polishing pad were produced in the same manner as in Example 1 from a commercially available sheet of nylon 6 resin having a thickness of 1 mm.
The sheet had a flexural modulus of 820 MPa and a Shore durometer hardness D of 68. Example 1 A method for conditioning a polishing pad and a method for polishing a semiconductor substrate.
The same conditions were used.

The unevenness of the surface of the insulating film on the semiconductor substrate after polishing was 320 Å at the central portion of the wafer and 330, 290, 320 and 350 Å at the four peripheral portions. The thickness of the insulating film at the center of the wafer was 1.6 μm, and the thickness of the insulating film 3 mm from the edge of the wafer was 1.4 μm. The semiconductor substrate after polishing has a width of 30 to 50 μm and a depth of 0.02 to 0.05 μm
m, many scratches with a length of 35 to 1200 μm were observed. As shown in Comparative Examples 3 to 5, scratches are generated in the polishing layer of a resin made of a homogeneous polymer containing no rubber component. Therefore, in Examples 1 to 4, the scratches are not generated. For resin matrix,
It is considered that the fact that soft and sticky rubber particles are mixed in a well-balanced manner and that they are phase-separated to form a sea-island structure is involved.

[0061]

According to the polishing pad and the polishing apparatus of the present invention, uniform flatness (uniformity), a high and stable polishing rate, and generation of scratches are obtained by polishing only the projections of local irregularities over the entire surface of the semiconductor substrate. Suppression can be achieved, and a polishing pad excellent in quality reproducibility can be provided.

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[Procedure amendment]

[Submission date] March 15, 2000 (200.3.1.
5)

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Claims

[Correction method] Change

[Correction contents]

[Claims]

[Procedure amendment 2]

[Document name to be amended] Statement

[Correction target item name] 0040

[Correction method] Change

[Correction contents]

For the cushion layer in the present invention, besides a nonwoven fabric impregnated with polyurethane which is generally used at present (for example, Suba400 (trade name, manufactured by Rodale)), rubber, foamed elastic material, foamed plastic, etc. may be used. Although not particularly limited, the bulk modulus is 60 MPa or more and the tensile modulus is 0.1 to 20 MPa
A cushion layer having the characteristic of a is preferred. If the tensile modulus is low, the uniformity of the flatness over the entire surface of the semiconductor substrate tends to be impaired. Even when the tensile modulus is large, the uniformity of the flatness over the entire surface of the semiconductor substrate tends to be impaired. A more preferable range of the tensile modulus is 0.5 to 10 MPa.
It is. The polishing layer has a hardness of 90 degrees or more in A hardness.
It is preferable because of excellent supporting properties. As a cushion layer
Preferred ranges of the above-mentioned bulk modulus and tensile modulus.
In the above, the A hardness is 40 degrees or more and 74 degrees or less,
-Excellent wave absorption and excellent in-plane uniformity
Is preferred.

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) C08L 55/02 C08L 55/02 101/00 101/00 F term (Reference) 3C058 AA07 AA09 CB01 CB02 CB03 CB10 DA17 4F071 AA11 AA12 AA13 AA14 AA15 AA20 AA21 AA22 AA24 AA25 AA26 AA27 AA28 AA30 AA33 AA34 AA40 AA45 AA46 AA48 AA50 AA51 AA53 AA55 AA63 AA64 AA67 AA75 AA77 AA78 AA79 AD02 AE13 AH17 DA17 4J002 AC01W AC02W AC03W AC06W AC07W AC08W AC09W BB01X BB07W BB15W BB18W BB27W BC02X BD03X BD10X BD12W BD12X BE04X BF02X BG04W BG06X BG10X BN06W BN10W BN12W BN14W BN15W BN16W BP01W CB00X CF05X CF16X CG00X CH04W CK02X CK03W CK04W CL00X CN01W CNX

Claims (10)

[Claims] 1. A polishing pad for a semiconductor substrate, comprising a polishing layer comprising a resin composition having a phase separation structure. 2. The resin composition having a phase-separated structure is a resin composition containing rubber.
The polishing pad for a semiconductor substrate according to the above. 3. The polishing pad for a semiconductor substrate according to claim 2, wherein the resin composition contains a thermoplastic resin as a component other than rubber. 4. The polishing pad for a semiconductor substrate according to claim 2, wherein the resin composition contains a rubber-reinforced styrene-based resin. 5. The resin composition according to claim 2, wherein the resin composition contains an acrylonitrile-styrene-butadiene copolymer.
The polishing pad for a semiconductor substrate according to any one of the above. 6. The polishing pad has a polishing layer and a bulk elastic modulus of 6
The polishing pad for a semiconductor substrate according to any one of claims 1 to 5, wherein the polishing pad is bonded to a cushion layer having a tensile elastic modulus of 0 MPa or more and a tensile elasticity of 0.1 MPa or more and 20 MPa or less. 7. The polishing pad for a semiconductor substrate according to claim 1, wherein a groove or a hole is formed on a surface of the polishing layer. 8. The polishing pad for a semiconductor substrate according to claim 1, wherein the resin composition is melt-kneaded. 9. A polishing head, the polishing pad according to claim 1, which faces the polishing head, a polishing platen for fixing the polishing pad, and a drive for rotating the polishing head and / or the polishing platen. A polishing apparatus comprising the apparatus. 10. The polishing head according to claim 1, wherein the semiconductor substrate is fixed to a polishing head, and the polishing pad is fixed to a polishing platen. A method of polishing a semiconductor substrate, comprising: rotating a polishing platen to polish the semiconductor substrate.