TW201230888A - Plasma processing apparatus and plasma processing method - Google Patents

Plasma processing apparatus and plasma processing method Download PDF

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Publication number
TW201230888A
TW201230888A TW100124856A TW100124856A TW201230888A TW 201230888 A TW201230888 A TW 201230888A TW 100124856 A TW100124856 A TW 100124856A TW 100124856 A TW100124856 A TW 100124856A TW 201230888 A TW201230888 A TW 201230888A
Authority
TW
Taiwan
Prior art keywords
electrode
plasma
waveguide
plasma processing
slit
Prior art date
Application number
TW100124856A
Other languages
Chinese (zh)
Inventor
Masaki Hirayama
Tadahiro Ohmi
Original Assignee
Univ Tohoku
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Tohoku, Tokyo Electron Ltd filed Critical Univ Tohoku
Publication of TW201230888A publication Critical patent/TW201230888A/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Disclosed is a plasma processing device that can control high-frequency waves that propagate through waveguides formed in electrodes. Said plasma processing device (10) is provided with: a vacuum vessel (100) that contains a platform (115), on which a substrate (G) is placed, and a plasma space above the platform, in which a plasma is generated; a plurality of electrode pairs (200), divided into first electrodes (200a) and second electrodes (200b), arranged at intervals inside the vacuum vessel; and a plurality of coaxial tubes (225) that are each provided so as to cut across two electrodes and that supply, into the vacuum vessel, high-frequency waves for exciting the plasma. An inner conductor in each coaxial tube is connected to one of two electrodes and an outer conductor is connected to the other electrode. After high-frequency waves supplied from the plurality of coaxial tubes propagate through waveguides (205) each formed between two electrodes, said high-frequency waves are released into the vacuum vessel from plasma-exposed surfaces of dielectric plates (210) provided in the waveguides, exciting the plasma.

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201230888 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種以電衆來對被處理體施以微細 加工之電漿處理裝置以及電漿處理方法。 【先前技術】 平板顯不器、太陽電池、半導體等之製程中，在薄 膜之形成、㈣等係❹著電漿。係藉蝴如對真 二腔至内導人氣體’而對設於腔室内之電極施加數MHz 〜數100MHz之高頻所生成者。為了提升生產性，平板 顯不器、太陽電池用破璃基板之尺寸每年加大，超過 2m見方之玻璃基板已進入了量產。 在電水 CVD (Chemical Vapor Deposition)等成膜 程序’為了提升成膜速度，乃需要更高密度之電漿。此 外’為了壓低入射於基板表面之離子的能量來降低離子 照射損害，且為了抑制氣體分子之過度解離，係要求電 子溫度低之電漿。一般而言，若提高電漿激發頻率，則 電漿密度增加、電子溫度降低。從而，為了以高生產量 來形成高品質薄膜，乃希望提高電漿激發頻率。是以， 乃將比通常高頻電源之頻率13 56MHz來得高之3〇〜 300MHz 之 VHF( Very High Frequency)頻帶之高頻 用於電滎處理（參照例如專利文獻1、2 )。 習知技術文獻 專利文獻1日本特開平9 — 312268號公報 專利文獻2日本特開2009 — 021256號公報 4 201230888 【發明内容】 但是，一旦基板尺寸變大、電漿激發頻率變高，會 因為施加高頻之電極内所產生之表面波的駐波造成電 漿密度之均勻性惡化，此為問題所在。一般而言，若被 施加高頻之電極尺寸比自由空間之波長的1/2〇來得 大，假使未採行何種對策將無法激發均勻的電聚。 例如’當基板尺寸為1m見方之情況，若電漿激發 頻率設定為13.56MHz雖可得到均勻之電漿，但由於電 漿逸度低、電子溫度高而難以高速地形成高品質之薄 膜。另一方面，若電漿激發頻率設定為約3倍之 40MHz’雖膜質與成膜速度獲得改善，但均勻性會顯著 惡化。即使為40MHZ以上之高頻仍能在超過2m見方 之大面積基板上激發均勻電漿之技術為必要者。 針對上述課題’本發明之目的在於提供—種新穎且 經過=之電X處理|置，即便魏激發頻率成為高頻 化仍此在大面積基板上激發均勻的電漿。 為了解決上述課題，依據本發 =處理裝置，係具備有:減壓=某== 台以及於該載置台上方產生電2 料有第1電極部鮮2電極部這 個電極。P而配置於該電聚空間之上 々 2:Γ部間’朝該電襞空間呈狹縫狀二介 對及輕容器之内部供給用以激發 201230888 電衆之高頻’配置於該狹缝狀開口之長邊方向上.盆 對設有複數同軸管;該複數同轴 管之内料齡連接於該2個電極部之—者， 轴管之外料體係連接於另—者；從該複數同轴管所供 給之高頻傳輸於該導波管之後再從該介電體板之電聚 露出面釋放至δ亥減壓容器内來激發電聚。 據此，高頻從複數同軸管被供電至狹縫狀開口之導 波管。藉由將供電點之間距設定為比傳輸於導波管之高 頻的管内波長來得充分短，則可抑制於導波管内產生駐 波，可更均勻地生成電毁。 該同軸嘗之内部導體亦可貫通於在該介電體板所 設之孔。 該2個電極部在該狹縫狀開口之相反側端部亦可 為短路。 έ亥2個電極部在該狹縫狀開口之相反側端部亦可 和該減壓容器間相短路。 s玄2個電極部亦可在該狹縫狀開口之長邊方向的 兩端部為短路。 該2個電極部之電漿露出面以及該介電體板之電 漿露出面亦可為大致同一面。 該2個電極部之電漿露出面的面積亦可大致相等。 該複數同軸管之内部導體與該電極部間之連接部 亦可大致等間隔地設置於該狹縫狀開口之長邊方向上。 兔極對亦可具備將該電極對在該狹縫狀開口側 201230888 之至少一部份以該狹缝狀開口之長邊方向分隔之間 隙，於該間隙之至少一部份插入有由絕緣體所構成之分 隔板。 該間隙亦可設置在該複數同軸管之内部導體與該 電極部間之連接部間。 該導波管之該狹縫狀開口之法線方向的電氣長度 亦可為π/2以下。 亦可進一步具備調整機構來調整在該導波管傳輸 於該狹縫狀開口之長邊方向上之高頻波長。 複數該電極對亦可在該狹缝狀開口之短邊方向上 設置排列間隙。 此外，為了解決上述課題，依據本發明之其他觀 點，係提供一種電漿處理方法，其所使用之電漿處理裝 置係具備有：減壓容器，其内部具有載置被處理體之載 置台以及於該載置台上方產生電漿之電漿空間；電極 對，係具有第1電極部與第2電極部這2個電極部而配 置於該電漿空間之上方；導波管，係形成於該2個電極 部間，朝該電漿空間呈狹缝狀開口；以及複數同軸管， 用以對該減壓容器之内部供給用以激發電漿之高頻，配 置於該狹縫狀開口之長邊方向上； 該電漿處理裝置相對於1個該電極對設有複數同 軸管；該複數同軸管之内部導體係連接於該2個電極部 之一者，該複數同轴管之外部導體係連接於另一者； 電漿處理方法具備有下述步驟：使得高頻經由該複 201230888 數同軸警而傳輸於在該2個雷托都阳 之步驟；以及將傳輪於該導波管^卿成之導波管 管之介電體板的電漿露出面釋===置於該導波 發電漿之步驟。 釋放至5亥減壓容器内來激 亦可具備有下述步驟：蜊 同軸管之至少-者的反射計’以連結於該複數 反射或是阻抗進行測量；以及調!㈣ 測I夕e 6』β 调正步驟’控制器基於該 高頻波長抗之檢㈣料傳輸㈣導波管之 兮2^聚處理裝置亦可進―步具備内部導體連接於 該2個電極部之—者、外部導體連接於另 ㈣可藉㈣連接於該調整用同。之 ^變電路進行調整明整傳輸於該導波管之高頻 波長。 該電漿處理裝置亦可具備有使得該2個電極部短 路、可在該狹縫狀開口之垂線方向上移動之金屬構件； 该調整步驟可藉由控金屬構件之轉來調整傳輸 於該導波管之高頻波長。 該電漿處理裝置亦可具備有可在該導波管内於該 狹縫狀開口之魏方向上移動之雜用介電體板；該調 整步驟可藉由控制該調整用介電體板之移自來調整傳 輸於該導波管之高頻波長。 如以上所說明般，依據本發明，藉由在狹縫狀開口 之導波管之長邊方向設置複數個供給高頻之供電點，可 201230888 抑制導波管内產生駐波，於狹縫狀開口之長邊方向上更 均勻地生成電漿。 【實施方式】 以下參照所附圖式，針對本發明之實施形態做詳細 說明。此外，於本說明書以及圖式中，針對實質上具有 同一功能構成之構成要素係賦予同一符號而省略重複 說明。 <第1實施形態> 〔電漿處理裝置之構成〕 首先，針對本發明之第1實施形態之電漿處理裝置 之概略構成參照圖1以及圖2所示縱截面圖來說明。圖 1係圖2之1 — 1截面圖，圖2係圖1之2 — 2截面圖。 圖1以及圖2所示之電漿處理裝置10係設置複數電極 而於電極間流通高頻電流且可從基板正上方將氣體予 以排氣之裝置構成之一例。以下，說明電漿處理裝置之 各部構成。 電漿處理裝置10具有内部載置基板G之真空容器 100,於内部對玻璃基板（以下稱為基板G)進行電漿處 理。真空容器100之截面為矩形狀，係由鋁合金等金屬 所形成，呈接地狀態。真空容器100之上部開口係由蓋 105所覆蓋，藉由Ο型環110保持真空容器内之氣密。 基板G係載置於載置台115。此外，基板G為被處理體 之一例，亦可為石夕晶圓。 真空容器100和基板側之面相對向之面（天花板 9 201230888 面）係排列有兩個電極對200。電極對2〇〇係由ρ _ 金所形成之相同大小的第1電極部2〇〇a以及第2 ^ 〇 部200b所構成。電極部200a、2〇〇b係取出間隙 極 於左右。電極部20〇a、200b係以螺絲（未圖， 於蓋105。 ，、J固定 第1電極部200a以及第2電極部·b係從 間附近往離開載置台115之方向延伸存在。第1杂=: 200a與第2電極部200b間係發揮朝向電漿空間j =部 狀開口之導波管205的功能。導波管2G5插人 = 板2H)。介電體板210係以氧化紹或是石英等 形成。由於導波管205之上部呈現短路，故導波管 之上側電％比下側來得弱。從而，只要將電場強之 管205之下側以介電體板21〇來阻塞，則導波管2〇5之 上部=可為空洞。當然，介電體板21〇亦可被埋入直到 導波管205之上部。以下，將以介電體板21〇所阻塞著 之導波管205下面的開口稱為介電體狹縫。左右電^部 200a、200b之電漿露出面Α的面積大致相等。藉此， 電極部200a、200b之電極下面的電場強度大致^等， 可使得電極對200下面之電場強度分布均勻化。 對1個電極對200設有複數同轴管225。同軸管225 夂外部導體225b係和第2電極部2〇〇b成為一體，其内 部導體225al之端部係垂直地螺固於内部導體。 内部導體225a2係貫通在介電體板21〇所開設之孔而連 接於第1電極部200a。 201230888 亦即，同軸管225之内部導體（225a]、奶⑵係 道接於電極對200之-側的電極部，同軸管225之外部 :體j25b係連接於電極對細之另一側之電極部。於 2H2f之上端係、經由整合器245而連接著高頻電源 。攸r%頻電源25G所輸出之高頻電力係經由同轴管 朝垂直於紙面之方向傳輸於兩個電極部2〇〇b 間之導波管2G5,從介電體狹縫釋放至真空容器_ 内，以表面波的形式傳輸於電極下面（電極 °° 之電聚露出面A)而被消耗在電漿之激發上。於第】電 及第2電極部2嶋之下面的護套係被分別 細加振幅相等且逆相位之高頻。以下將内部導體225a2 與第1電極部200a之連接部稱為供電點。 内部導體225a2係在貫通絕緣環230之狀態下受到 焊接。内部導體225a2係經由絕緣環23()而以絕緣環押 板235來固定於第i電極部鳥。於絕緣 環押板况之間設有〇型環，將大氣和真空力 隔。於本貫施形態，同軸管225之内部為大氣。是以， 為了將真空容器内予以氣密保持，蓋1〇5盘外部導體 225b之接合面係藉由〇型環况來真空密封著。内 導體225a2之前端係成為螺紋構造而拾人六角螺帽細 以將内部導體2 2 5 a2之前端以六角螺巾冒2 6 〇來覆蓋。 如前述般，内部導體225a2係在各電極對^〇〇之带 梁露出面與真空容H⑽之天花板面（料於基板; 之面）之間貫通介電體板21G。於鄰接之電極對2〇〇所 201230888 分別設置之内部導體225a2貫通各電極對2〇〇之介電體 板210之方向為逆向。藉此，對左右之同軸管以同 振‘、同相位之高頻來進行供電之情況，於左右之電極 ，係分別被施加振幅相等之逆相位的高頻。此外，於本 說明書中，所謂高頻意指1〇MHz〜3000MHZ之頻帶， 為，磁波之一例。此外，同軸管225係供給高頻之傳送 路乜之一例，亦可取代同軸管225而改用同軸電纜、矩 形導波管等。 電極對200的兩個電極部2〇〇a、200b之電漿露出 面A為矩形。介電體板210相對於電極部2〇〇a、2〇〇b 之電漿露出面A係大致垂直配置著。電極部2〇〇a、2〇〇b 電水洛出面A在垂直於導波管205且平行於載置台 115之方向（相對於圖1紙面之左右方向）之長度係短 於平行於導波管205且平行於載置台115之方向（相對 於圖1紙面之内側方向）之長度。 為了防止在電極部200a、200b之下部側面的放電 、及電漿彳文入上部，電極部200a、200b之介電體狹縫 知邊方向的下部側面係以第1介電體蓋件220所被覆著 照圖〇。藉由將設置於第1介電體蓋件220之凸 f嵌合於電極部200a、200b之側面所設之凹部來固定 第1介電體蓋件220。 於’丨電體狹縫之短邊方向，為了施加均勻的高頻電 昜直到介電體狹縫長邊方向之端部，導波管205在介電 體狹縫長邊方向之端面必須成為開放狀態。為了使得導 12 201230888 波管205在介+ 態，且防止在兩Γ⑽長邊方向之端面成為開放狀 介電體狹缝現放電，電極部胤、誦在 犯被覆著（參部側9面^第2介電體蓋件 絕緣體之螺絲（未^ ^ "電體蓋件215係藉由 電極對200下部^ /又於電極部200a、200b。於 向之端部附近面當Γ，介電體狹縫短邊方 著。此部分合乳呂溶射膜等絕緣膜298所被覆 :之:::強=為表面波之駐波的影響，使得施加於護 變分來得強。如此般若以 施加;套以會分壓於縣與絕緣膜，故 漿。、強度變弱’整體上可生成更均勻之電 於本貝施形態，電極部細&、2嶋之電聚露出面 係形成為和介電體板21〇之電聚露出面B成為大致同 面准，I電體板210之電聚露出面]5亦可相對於電極 部鳥、2_之電㈣出面A成為突出或凹陷。 電極對200係成為淋灑板。具體而言，於電極部 200a、200b之下面形成有凹陷，淋灑板用電極蓋27〇 係嵌入此凹陷中。電極蓋270係藉由螺絲（未圖示）固 疋於電極部200a、200b。於電極部200a、200b與電極 盍270之間設有間隙，此間隙成為氣體流路。於氣體流 路下端嵌入有由氧化鋁等絕緣體所構成之氣體噴嘴 U5。氣體喷嘴275係在和紙面呈垂直之方向上成為細 長形狀，設有多數之氣體釋放孔。通過氣體流路之氣體 201230888 係從設置於氣體噴嘴275之氣體釋放孔釋放於真空容 器内。如此般，藉由設置氣體喷嘴275，則固定電極蓋 270之螺絲不會接觸於電漿。此外，藉由以絕緣體來形 成氣體噴嘴275，可降低施加於氣體釋放孔内部之高頻 電場來防止於氣體釋放孔内部之放電。 如圖2所示般’本實施形態之電漿處理裝置1〇， 於介電體狹縫之長邊方向有複數同軸管225平行配置 排列著。於各同軸管225被施加同相位之高頻，從各同 ，官225對導波管205進行供電。依據此r多點供電」’ =由將配置排列於介電體狹縫長邊方向之同軸管間距 =定為適切值，可於介電體狹縫長邊方向激發均勻的電 遺。此外，電極對2〇〇之狹縫狀開口（介電體狹縫部分） 短邊方—1之紙面之橫向（圖2之紙面之内侧 ’電極對2GG之狹縫狀開口（介電體狹縫部分） ^邊方向稱為圖2之紙面之橫_丨之紙面之内側 差部将^ Ϊ對2⑼之下端附近在真空容器1G G側壁之段 等絕緣^有側邊轉⑽。側邊蓋件280係、由氧化銘 28Γ體或是㈣形成，可防止電驗人第2排氣流路 於氣體之壓力、d疋電漿均句並不充分。由 基板間、基板溫度等影響程序，故這些在 基板上相均勻。通常之電漿處縣置，在對向於基板 201230888 G之部分設有淋灑板’朝向基板供給氣體。氣體係從基 板G之中央部朝向外周部流動，從基板之周圍被排氣。 必然地，壓力在基板之中央部係高於外周部，滯留時間 在基板之外周部久於中央部。—旦基板尺寸變大，會因 為此壓力與滞留時間之均勻性的惡化而變得無法進行 均勻的程序。為了對大面積基板也進行均勻的程序，在 從基板之正上方供給氣體之同時，也必須從基板之正上 方進行排氣。 疋以，於本實施形態之電漿處理裝置1〇，於鄰接 之電極對200間設置排氣用間隙（以下稱為排氣狹縫 C)。亦即，從氣體供給器290所輸出之氣體係通過電 ，對200之氣體流路而從電極對2〇〇之底面供給至處理 至，，從設置於基板G之正上方的排氣狹縫c朝上方 排氣。通過排氣狹縫C之氣體係在藉由鄰接之電極對 而形成於排氣狹縫C上部之第1排氣流路281中朝 ;丨電體狹縫長邊方向流動，被導向於第2介電體苗件 215與真空容器100之間所設之第2排氣流路283二再 者’在真空容器100之侧壁所設之第3排氣流路285中 朝下方流動，藉由在第3排氣流路285下方所設之真办 栗（未圖示）而被排氣。 /、二 於蓋105形成有冷媒流路295a。從冷媒供給器 所輪出之冷媒係流向冷媒流路295a’藉此，經由電極對 200將從電漿流入之熱傳遞給蓋105侧。 (高頻電流）201230888 VI. Description of the Invention: [Technical Field] The present invention relates to a plasma processing apparatus and a plasma processing method for subjecting a workpiece to microfabrication by an electrician. [Prior Art] In the process of flat panel display, solar cell, semiconductor, etc., plasma is formed in the formation of a thin film, and (4). It is generated by applying a high frequency of several MHz to several hundred MHz to the electrodes provided in the chamber by means of a true gas to the inner gas. In order to improve productivity, the size of the flat panel display and the glass substrate for solar cells has increased every year, and the glass substrate exceeding 2 m square has entered mass production. In order to increase the film formation speed, a film forming procedure such as electroless CVD (Chemical Vapor Deposition) requires a plasma of higher density. Further, in order to reduce the energy of ions incident on the surface of the substrate to reduce ion irradiation damage, and to suppress excessive dissociation of gas molecules, a plasma having a low electron temperature is required. In general, if the plasma excitation frequency is increased, the plasma density increases and the electron temperature decreases. Therefore, in order to form a high quality film with high throughput, it is desirable to increase the plasma excitation frequency. In other words, the high frequency of the VHF (very High Frequency) band of 3 〇 to 300 MHz which is higher than the frequency of the normal high-frequency power supply of 13 56 MHz is used for the electric enthalpy processing (see, for example, Patent Documents 1 and 2). In the case of the substrate size becoming large and the plasma excitation frequency becoming high, the application is due to the application of the above-mentioned Japanese Patent Application Laid-Open No. Hei. No. Hei. The standing wave of the surface wave generated in the high-frequency electrode causes the uniformity of the plasma density to deteriorate, which is a problem. In general, if the size of the electrode to which the high frequency is applied is larger than 1/2 of the wavelength of the free space, even if no countermeasure is taken, uniform electropolymerization cannot be excited. For example, when the substrate size is 1 m square, if the plasma excitation frequency is set to 13.56 MHz, a uniform plasma can be obtained. However, since the plasma fugacity is low and the electron temperature is high, it is difficult to form a high-quality thin film at a high speed. On the other hand, if the plasma excitation frequency is set to about 3 times 40 MHz', the film quality and the film formation rate are improved, but the uniformity is remarkably deteriorated. Even if it is a high frequency of 40 MHZ or more, it is necessary to excite a uniform plasma on a large-area substrate of more than 2 m square. In view of the above problems, it is an object of the present invention to provide a novel and electrically X-treated device that excites a uniform plasma on a large-area substrate even if the Wei excitation frequency becomes high frequency. In order to solve the above problem, the present invention is characterized in that: the pressure reduction = a == stage, and the electrode having the second electrode portion of the first electrode portion is generated above the mounting table. P is disposed on the electro-convergence space 々2: Between the crotch portion, the slit is formed in the e-throw space, and the internal supply of the light container is used to excite the high-frequency of the 201230888 electrician. a plurality of coaxial tubes are provided in the longitudinal direction of the opening; the plurality of coaxial tubes are connected to the two electrode portions, and the shaft tube external material system is connected to the other; The high frequency supplied by the coaxial tube is transmitted to the waveguide and then released from the electropolymerized exposed surface of the dielectric plate to the δ hai decompression vessel to excite electropolymerization. According to this, the high frequency is supplied from the plurality of coaxial tubes to the waveguide of the slit-like opening. By setting the distance between the feed points to be sufficiently shorter than the in-tube wavelength of the high frequency transmitted to the waveguide, it is possible to suppress the occurrence of standing waves in the waveguide and to generate electric breaks more uniformly. The inner conductor of the coaxial conductor may also pass through a hole provided in the dielectric plate. The two electrode portions may be short-circuited at the opposite end portions of the slit-like openings. The two electrode portions at the opposite side of the slit-shaped opening may be short-circuited with the decompression container. The two electrode portions of the s-Xan may be short-circuited at both end portions in the longitudinal direction of the slit-shaped opening. The plasma exposed surface of the two electrode portions and the plasma exposed surface of the dielectric plate may be substantially the same surface. The areas of the plasma exposed surfaces of the two electrode portions may be substantially equal. The connection portion between the inner conductor of the plurality of coaxial tubes and the electrode portion may be provided at substantially equal intervals in the longitudinal direction of the slit-like opening. The pair of rabbit poles may further include a gap separating the electrode pair at least a portion of the slit-shaped opening side 201230888 in a longitudinal direction of the slit-shaped opening, and at least a portion of the gap is inserted by an insulator The dividing board that constitutes it. The gap may also be provided between the inner conductor of the plurality of coaxial tubes and the connection between the electrode portions. The electrical length of the slit-shaped opening of the waveguide in the normal direction may be π/2 or less. Further, an adjustment mechanism may be further provided to adjust a high-frequency wavelength in which the waveguide is transmitted in the longitudinal direction of the slit-like opening. The plurality of electrode pairs may also be arranged with an arrangement gap in the short side direction of the slit-like opening. Further, in order to solve the above problems, according to another aspect of the present invention, there is provided a plasma processing method, comprising: a pressure reducing container having a mounting table on which a workpiece is placed; a plasma space for generating plasma on the upper surface of the mounting table; the electrode pair having two electrode portions of the first electrode portion and the second electrode portion disposed above the plasma space; and the waveguide is formed on the electrode Between the two electrode portions, a slit-shaped opening is formed in the plasma space, and a plurality of coaxial tubes are provided for supplying the high-frequency of the plasma to the inside of the decompression container, and are disposed in the slit-shaped opening The plasma processing device is provided with a plurality of coaxial tubes with respect to one of the pair of electrodes; the internal guiding system of the plurality of coaxial tubes is connected to one of the two electrode portions, and the external guiding system of the plurality of coaxial tubes Connected to the other; the plasma processing method has the following steps: causing the high frequency to be transmitted to the two Retox in the second via the 201230888 number coaxial alarm; and the transmission to the waveguide ^ Qing Chengzhi waveguide The dielectric plate plasma exposed surface disposed === release step of generating the plasma waveguide. Released into the 5 liter decompression container may also have the following steps: at least the reflectometer of the 蜊 coaxial tube is connected to the complex reflection or impedance for measurement; and tune! (4) Measure I eve e 6 Ββ modulating step 'controller based on the detection of the high-frequency wavelength resistance (four) material transmission (four) 导 2 聚 处理 ^ ^ ^ ^ ^ ^ ^ ^ ^ 具备 具备 内部 内部 内部 内部 内部 内部 内部 内部 内部 内部 内部 内部 内部The conductor is connected to the other (four) and can be connected to the adjustment by the same. The variable circuit is adjusted to reflect the high frequency wavelength transmitted to the waveguide. The plasma processing apparatus may further include a metal member that short-circuits the two electrode portions and is movable in a direction perpendicular to the slit-shaped opening; the adjusting step may be adjusted to be transmitted to the guide by controlling the rotation of the metal member The high frequency wavelength of the wave tube. The plasma processing apparatus may further include a miscellaneous dielectric plate movable in the waveguide of the slit-shaped opening in the waveguide; the adjusting step may be performed by controlling the adjustment of the dielectric plate The high frequency wavelength transmitted to the waveguide is automatically adjusted. As described above, according to the present invention, by providing a plurality of power supply points for supplying high frequency in the longitudinal direction of the waveguide of the slit-like opening, it is possible to suppress standing waves in the waveguide in 201230888, and to form a slit in the slit-shaped opening. The plasma is more uniformly generated in the longitudinal direction. [Embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the present specification and the drawings, constituent elements that have substantially the same functional configuration are denoted by the same reference numerals, and the description thereof will not be repeated. <First Embodiment> [Configuration of Plasma Processing Apparatus] First, the schematic configuration of the plasma processing apparatus according to the first embodiment of the present invention will be described with reference to the longitudinal cross-sectional views shown in Figs. 1 and 2 . 1 is a sectional view taken along line 1-1 of FIG. 2, and FIG. 2 is a sectional view taken along line 2-2 of FIG. The plasma processing apparatus 10 shown in Fig. 1 and Fig. 2 is an example in which a plurality of electrodes are provided and a high-frequency current flows between the electrodes, and the gas can be exhausted from directly above the substrate. Hereinafter, the configuration of each unit of the plasma processing apparatus will be described. The plasma processing apparatus 10 has a vacuum container 100 on which a substrate G is placed, and internally performs plasma treatment on a glass substrate (hereinafter referred to as a substrate G). The vacuum vessel 100 has a rectangular cross section and is formed of a metal such as an aluminum alloy and is grounded. The upper opening of the vacuum vessel 100 is covered by a cover 105, and the airtightness in the vacuum vessel is maintained by the Ο-shaped ring 110. The substrate G is placed on the mounting table 115. Further, the substrate G is an example of the object to be processed, and may be a stone wafer. The electrode container 200 and the surface on the substrate side face each other (the ceiling 9 201230888 surface) are arranged with two electrode pairs 200. The electrode pair 2 is composed of a first electrode portion 2a and a second portion 200b of the same size formed by ρ_gold. The electrode portions 200a and 2b are taken out from the gap to the left and right. The electrode portions 20A and 200b are screwed (not shown, and the first electrode portion 200a and the second electrode portion/b are fixed in the direction in which the first electrode portion 200a and the second electrode portion/b are separated from the vicinity of the mounting table 115. Miscellaneous =: 200a and the second electrode portion 200b function as a waveguide 205 that faces the plasma space j = a partial opening. The waveguide 2G5 is inserted into the plate 2H). The dielectric plate 210 is formed of oxidized or quartz. Since the upper portion of the waveguide 205 is short-circuited, the upper side of the waveguide is weaker than the lower side. Therefore, as long as the lower side of the tube 205 with the electric field is blocked by the dielectric plate 21, the upper portion of the waveguide 2〇5 can be a void. Of course, the dielectric plate 21 can also be buried until the upper portion of the waveguide 205. Hereinafter, an opening below the waveguide 205 blocked by the dielectric plate 21A is referred to as a dielectric slit. The areas of the plasma exposed faces of the left and right electric parts 200a and 200b are substantially equal. Thereby, the electric field intensity under the electrodes of the electrode portions 200a and 200b is substantially equal, and the electric field intensity distribution under the electrode pair 200 can be made uniform. A plurality of coaxial tubes 225 are provided for one electrode pair 200. The coaxial tube 225, the outer conductor 225b, and the second electrode portion 2b are integrated, and the end portion of the inner conductor 225al is vertically screwed to the inner conductor. The inner conductor 225a2 is connected to the first electrode portion 200a through a hole formed in the dielectric plate 21''. 201230888, that is, the inner conductor (225a) of the coaxial tube 225, the milk (2) is connected to the electrode portion on the side of the electrode pair 200, and the outer portion of the coaxial tube 225: the body j25b is connected to the electrode on the other side of the electrode pair. The high frequency power is connected to the upper end of the 2H2f via the integrator 245. The high frequency power output by the %r% frequency power supply 25G is transmitted to the two electrode portions 2 via the coaxial tube in a direction perpendicular to the plane of the paper. The waveguide 2G5 between the 〇b is released from the dielectric slit into the vacuum vessel_, and is transmitted as a surface wave to the underside of the electrode (the electrode is exposed to the surface A of the electrode °°) and is consumed by the plasma. The sheaths on the lower side of the second and second electrode portions 2 are respectively added with high-frequency amplitudes of opposite amplitudes and opposite phases. Hereinafter, the connection portion between the inner conductor 225a2 and the first electrode portion 200a is referred to as a power supply point. The inner conductor 225a2 is welded while passing through the insulating ring 230. The inner conductor 225a2 is fixed to the i-th electrode portion by the insulating ring 235 via the insulating ring 23 (). It is equipped with a 〇-shaped ring that separates the atmosphere from the vacuum. The inside of the coaxial tube 225 is atmospheric. Therefore, in order to hermetically hold the inside of the vacuum container, the joint surface of the outer conductor 225b of the cover 1 〇 5 is vacuum-sealed by a 〇-type ring. The front end of the inner conductor 225a2 The threaded structure is picked up and the hex nut is thinned to cover the front end of the inner conductor 2 2 5 a2 with a hexagonal spiral scarf. As described above, the inner conductor 225a2 is exposed at each of the electrode pairs. The dielectric plate 21G is penetrated between the surface and the ceiling surface of the vacuum capacity H (10) (the surface of the substrate; the surface). The internal conductor 225a2 provided in the adjacent electrode pair 2 〇〇 201230888 is connected to each electrode pair 2 The direction of the electric plate 210 is reversed. Therefore, when the left and right coaxial tubes are supplied with the same frequency and the high frequency of the same phase, the upper and lower electrodes are respectively applied with the opposite phase high frequency of equal amplitude. In the present specification, the high frequency means a frequency band of 1 〇 MHz to 3000 MHZ, which is an example of a magnetic wave. Further, the coaxial tube 225 is an example of a transmission path for supplying a high frequency, and may be replaced by a coaxial tube 225. Switch to coaxial cable, a waveguide or the like. The plasma exposed surface A of the two electrode portions 2a, 200b of the electrode pair 200 is rectangular. The dielectric plate 210 is plasma with respect to the electrode portions 2a, 2b. The exposed surface A is arranged substantially vertically. The electrode portions 2〇〇a and 2〇〇b are electrically perpendicular to the waveguide 205 and parallel to the mounting table 115 (relative to the left-right direction of the paper in FIG. 1). The length is shorter than the length parallel to the waveguide 205 and parallel to the mounting table 115 (relative to the inner side of the paper surface of Fig. 1). To prevent discharge on the lower side of the electrode portions 200a, 200b, and plasma 彳In the upper portion, the lower side surface of the electrode portions 200a and 200b in the known direction of the dielectric slit is covered with the first dielectric cover 220. The first dielectric cover member 220 is fixed by fitting the projections provided on the first dielectric cover member 220 to the recesses provided on the side faces of the electrode portions 200a and 200b. In the short-side direction of the slit of the electric field, in order to apply a uniform high-frequency electric current to the end portion of the longitudinal direction of the dielectric slit, the end face of the waveguide 205 in the longitudinal direction of the dielectric slit must be Open state. In order to make the conduction 12 201230888 wave tube 205 in the dielectric state, and prevent the end surface of the two turns (10) in the longitudinal direction from being opened, the dielectric dielectric slit is discharged, and the electrode portion 胤 and 诵 are covered (the reference side 9 faces ^ The screw of the second dielectric cover insulator (not being used) is connected to the lower portion of the electrode pair 200/200b, and the electrode portion 200a, 200b. The short side of the body slit is covered. This part is covered with an insulating film 298 such as a latex film: :: strong = is the influence of the standing wave of the surface wave, so that it is applied to the guard band to be strong. The sleeve will be divided into the county and the insulating film, so the pulp will be weaker, and the whole will produce a more uniform electric current in the Benbeshi form, and the electrode portion will be fine & The electropolymerized exposed surface B of the dielectric plate 21 is substantially in the same plane, and the electropolymerized exposed surface of the I-electrode plate 210 can also be protruded or recessed with respect to the electrode portion bird 2, the electric (four) exit surface A. The electrode pair 200 is a shower plate. Specifically, a recess is formed on the lower surface of the electrode portions 200a and 200b, and the shower plate electrode is formed. 27 〇 is embedded in the recess. The electrode cover 270 is fixed to the electrode portions 200a and 200b by screws (not shown). A gap is provided between the electrode portions 200a and 200b and the electrode 盍270, and the gap becomes a gas flow. A gas nozzle U5 made of an insulator such as alumina is embedded in the lower end of the gas flow path. The gas nozzle 275 has an elongated shape in a direction perpendicular to the paper surface, and is provided with a plurality of gas release holes. The gas 201230888 is released from the gas discharge hole provided in the gas nozzle 275. Thus, by providing the gas nozzle 275, the screw of the fixed electrode cover 270 is not in contact with the plasma. Further, by the insulator The gas nozzle 275 is formed to reduce the high-frequency electric field applied to the inside of the gas release hole to prevent discharge inside the gas release hole. As shown in Fig. 2, the plasma processing apparatus 1 of the present embodiment is used for dielectric narrow In the longitudinal direction of the slit, a plurality of coaxial tubes 225 are arranged in parallel. A high frequency of the same phase is applied to each of the coaxial tubes 225, and power is supplied to the waveguide 205 from the respective 225. r multi-point power supply"' = the coaxial tube spacing arranged in the direction of the long side of the dielectric slit is set to a suitable value, and a uniform electric charge can be excited in the longitudinal direction of the dielectric slit. 2 slit slit-shaped opening (dielectric slit portion) Short side square-1 lateral direction of the paper surface (inside of the paper surface of Fig. 2) slit-shaped opening of the electrode pair 2GG (dielectric slit portion) ^ The inner side difference of the paper surface of the horizontal direction of the paper surface of Fig. 2 is the side of the lower side of the vacuum container 1G G near the lower end of the pair 2 (9), and the side is turned (10). The side cover member 280 is It is formed by the oxidation of the body 28 or (4), which can prevent the second exhaust flow path of the electroscope from being insufficient in the pressure of the gas and the d疋 plasma. Since the program is affected by the substrate, the substrate temperature, and the like, these are uniform on the substrate. Usually, the plasma is placed in the county, and a shower plate is provided on the portion opposite to the substrate 201230888 G to supply gas to the substrate. The gas system flows from the central portion of the substrate G toward the outer peripheral portion, and is exhausted from the periphery of the substrate. Inevitably, the pressure is higher in the central portion of the substrate than in the outer peripheral portion, and the residence time is longer in the outer peripheral portion of the substrate than in the central portion. Once the size of the substrate is increased, it becomes impossible to perform a uniform procedure because the uniformity of the pressure and the residence time is deteriorated. In order to perform a uniform process on a large-area substrate, it is necessary to exhaust gas from directly above the substrate while supplying gas from directly above the substrate. In the plasma processing apparatus 1 of the present embodiment, an exhaust gap (hereinafter referred to as an exhaust slit C) is provided between the adjacent electrode pairs 200. That is, the gas system output from the gas supplier 290 is supplied to the gas flow path of 200 from the bottom surface of the electrode pair 2 to the processing, and the exhaust slit is provided directly above the substrate G. c vent upwards. The gas system passing through the exhaust slit C flows in the first exhaust flow path 281 formed in the upper portion of the exhaust slit C by the adjacent electrode pair, and flows toward the longitudinal direction of the slit of the electric current, and is guided to the first The second exhaust flow path 283 provided between the dielectric seedlings 215 and the vacuum container 100 is further flowed downward in the third exhaust flow path 285 provided on the side wall of the vacuum container 100. The exhaust gas (not shown) provided below the third exhaust flow path 285 is exhausted. The second cover 105 is formed with a refrigerant flow path 295a. The refrigerant that has been taken out from the refrigerant supply flows to the refrigerant flow path 295a', whereby heat flowing from the plasma is transmitted to the lid 105 side via the electrode pair 200. (high frequency current)

S 201230888 如專利文獻1所§己載般，現狀之電聚Cvd穿置， 係在和載置基板之基板電極相對向之位置設置盘臭板 包極為同程度尺寸之馬頻施加電極，於基板電極與高頻 施加電極之間施加高頻來激發電漿。高頻電流係經由電 漿而流在基板電極與高頻施加電極間。於此種構成，鸟 到駐波之影響，VHF㈣以上之高解無法在大面積= 板上激發均勻的電漿。此外，由於基板流入了大的高頰 電流’而於基板表面產生自偏壓電位使得離子加速入 射。^此，會因為離子照射損害而無法進行高品質程序。 疋以，想到了分割向頻施加電極，於電極間施加言 頻之手段。此乃認為只要藉由分割電極來使得“個電極 =尺寸比表©紅波辣得小，則可激發㈣的電聚。 由於高頻電流不再流往基板，而可抑制離子照射 U電極分別施加不_位高頻來激發電聚之 領Sit之例而言有圖3B所示者。圖3A係示意 箭頭:I :施形態之電㈣綱所施加之高頻之圖。 ΐ二供電稱為電極内供電，將圖3B所示之供 电稱為電極外供電，以此來區別。 丁之供 (電極外供電）S 201230888 As in the case of Patent Document 1, the current electro-convex Cvd is placed in a position similar to the substrate electrode on which the substrate is placed, and the horse-frequency application electrode of the same size is provided on the substrate. A high frequency is applied between the electrode and the high frequency application electrode to excite the plasma. The high-frequency current flows between the substrate electrode and the high-frequency application electrode via the plasma. In this configuration, the high resolution of VHF (four) or higher cannot affect the uniform plasma on the large area = board due to the influence of the bird to the standing wave. In addition, since the substrate flows into a large high buccal current ', a self-bias potential is generated on the surface of the substrate to accelerate the incident of ions. ^This will not allow high quality procedures due to ion irradiation damage. I thought of dividing the frequency-applying electrode and applying a frequency between the electrodes. Therefore, it is considered that as long as the "electrode=size ratio is less than the red wave, the electro-convergence of (4) can be excited by dividing the electrode. Since the high-frequency current does not flow to the substrate, the ion-irradiated U-electrode can be suppressed respectively. The example of Figure 3B is applied to the example of applying Sit which does not have a high frequency to excite the electropolymer. Figure 3A is a schematic arrow: I: A diagram of the high frequency applied by the electric (4) mode of the application form. For the power supply inside the electrode, the power supply shown in Fig. 3B is called the external power supply of the electrode, so as to distinguish it.

ID SB 向配置觀見為矩形之電極係朝橫 逆相位之^ f 鄰之電極係被施加振幅相等但 阿頻。鬲頻係從連接於電極990、995上面之 201230888 ' _IM皮供給。同轴管规、9〇〇r分別 '、内部導體9〇〇a以及外部導體9〇〇卜 轴管9〇〇L、9〇〇R所供給之相互逆相位之高頻 門睹；j於书極上面之後，在電極"〇與電極995之間的 995生—次合成，再次分開而沿著電極990以及電極 下面傳輸。於電極990與電極995之下面的護套 經;=加逆向的高頻電場。高頻電流係經由電聚而流 之透以及圖4B係從圖3B之12— 12截面所觀看 =圖’圖3B為圖4入之13—13截面。於圖从以 濃淡顯示經模擬計算之電極以及電漿間 電場強度。白色部分為電場強的部分， 場弱的部分14><4=16個之長方體電極 縱^列之模式進行計算，而僅顯示了當中左上部（2χ2 =個）固於電極990、995分別連接著2支同軸管、 =^係從上部8支同轴管9_以及下部8支 同軸官_L分別進行逆相位、同 況，圖係僅從上部8支同轴電㈣ 之情況。 神s 900尺進仃向頻供電 =4A所4 ’儘讀連接於上下 官施加同振幅高頻，虹段電極995 = =。之電場強度。此外，如圖 於下段電極之同軸管规並未被施加高頻心= 地下段電極_之電場強度強於上段電極995 =:The ID SB is configured as a rectangular electrode with a phase opposite to the opposite phase. The adjacent electrode system is applied with equal amplitude but A-frequency. The 鬲 frequency system is supplied from 201230888 ' _IM skin connected to electrodes 990, 995. The coaxial tube gauge, 9〇〇r respectively, the inner conductor 9〇〇a, and the outer conductor 9〇〇b shaft tube 9〇〇L, 9〇〇R are supplied with the opposite phase high frequency threshold; After the top of the book, the 995-synthesis between the electrode "〇 and electrode 995 is again separated and transmitted along electrode 990 and under the electrode. The sheath under the electrode 990 and the electrode 995 passes through; = plus a reverse high frequency electric field. The high-frequency current flows through the electropolymerization and FIG. 4B is viewed from the cross section of 12-12 of FIG. 3B. FIG. 3B is a cross section 13-13 of FIG. The graph shows the simulated electric field and the electric field strength between the plasmas in shades. The white portion is the portion where the electric field is strong, and the field weak portion 14><4=16 rectangular parallelepiped electrode longitudinal column mode is calculated, and only the upper left portion (2χ2 = one) is fixed to the electrodes 990, 995 respectively Two coaxial tubes are connected, and the =^ system is reversed from the upper eight coaxial tubes 9_ and the lower eight coaxial members _L, respectively, and the figure is only from the upper eight coaxial powers (four). God s 900 feet into the frequency of the frequency = 4A 4 ‘reading connected to the upper and lower officials to apply the same amplitude high frequency, the rainbow segment electrode 995 = =. Electric field strength. In addition, the coaxial tube gauge shown in the lower electrode is not applied with high frequency core = the electric field strength of the subsurface electrode _ is stronger than the upper electrode 995 =:

S 17 201230888 度。 如此般’若無法針對各個電極獨立地控制電聚激發 強度’則去於大面積基板上生成均句電聚。例如，如圖 4A般，由於端部列（上段）之電極的電場強度弱，若 加缝連接於此電極之同軸管所投人之高頻電力，反而 歹内側（下段）電極之電場強度變強，電聚 會更趨惡化。 如此般’之所以無法對各個電極獨立地控制電漿激 乃因從同軸管幫、9罐所供給之高頻於經 、略人交會後再次分開而傳輸於電極900與995以及電 之故°如此—來’對連接於某電極之同軸管所施 穿栽iff*會傳遞到相鄰之電極。此外’由於表面波係 面咕Θ傳遞至離開之電極，所以會產生非預期之表 二/波而造成電漿均勻性惡化。再者，由於對作為 Hit —部份之電極間的間隙施加高頻電場，故在此 古^「生非預期之電聚。如此般，從電極外周部供給 网 電極外供電」會伴隨幾個問題。 (電極内供電） ，3八係將電極朝橫向做2等分，從其間釋放高頻 對爽椹I，第1電極部2〇〇a與第2電極部2〇〇b係以一 頻之八•電極對，於此等電極部間係形成有釋放高 古相二讀狹縫。若將電極對視為—個電極，則可看作 二ί电極内部被供電。從介電體狭縫所釋放之高頻係 …面波而於電極部表面朝左右傳輸。於第1電極部 201230888 200a與第2電極部20〇b夕π二 向之高頻電場。於相鄰套係分別被施加逆 之阻抗變高，故傳輸至電二J 2〇0間’由於電極部間 鄰之電極部《反射㉞。=之表面波紐傳輸至相 地控制賴激發強度，可猶可對各個電極對獨立 圖5A以及® 5B係極為均勾的電聚° 之透視圖，圖3A係圖5A:15=-14截面所觀看 及㈣係以濃淡顯示羥模射於圖从以 進行計算，僅顯示當中左2極對2〇0縱向排列之模式 接^支，225 °圖从係從所有的同J = 部之同轴管225進行高圖5B係僅從上 軸管若僅從連接於上段電極物之同 t 電極對2°〇的電場強度 〇 +央。卩之電極對綱至端㈣（上段） 之電極對200激發均勻的電漿。 山又） 只要對相鄰之電極對供給逆相 =;，於構成不同電極對之相鄰兩電= 之頻。於此狀態下，由於在電極對間 之間隙（排軋狹縫C )邗去;4 # a 分不會產生電渡。 &加而頻電場，是以此部 亦即為了防止於排氣狹缝C產生電場’將分別傳 201230888 輸於鄰接電極對200之導波管205的高頻相位錯開 180°，來逆向施加高頻電場。 是以，於本實施形態，如圖1所示般，配置於左側 電極對200之同轴管的内部導體225a2和配置於右側電 極對200之同軸管的内部導體225a2係呈逆向配置。依 據相關構成，從高頻電源250所供給之同相位高頻當經 由同軸管而傳遞至導波管205之時會成為逆相。 此外，當内部導體225a2以相同方向配置之情況 下，藉由從尚頻電源250將逆相之高頻分別施加於鄰接 之電極對，可使得施加於電極對2〇〇下面之高頻電場成 為相同方向，能以排氣狹縫c將高頻電場調整為〇。 於習知之電漿處理裝置，如圖3B所示般，必須將 電極上面、同軸管内部導體以絕緣體以及屏蔽物來被 覆。以此部分來防止產生電漿，且在不致反射高頻之情 況下進行傳輸。將大型電極、同軸管内部導體以絕緣 體、屏蔽物來無間隙方式被覆並非易事，裝置之成本會 變高。 曰 由於來自電漿之熱係流入電極下面，故藉由於電極 ，置冷媒流路來麵冷媒以進魏熱。由於電極被施加 问頻故對電極供給冷媒之配管必須相對於⑽D呈絕 緣此外，於電極下面設置多數氣體釋放孔來釋放氣 體1電極供給氣體之配管必須相對於GND呈絕緣。 如此般’㈣祕㈣極之崎必彡貞全部_於GND 呈絕緣，故構造變得複雜。 201230888 另一方面，於本實施形態，電極部200a、2〇〇b之 上面短路且處於接地狀態。導波管205被視為側面由第 1電極部200a以及第2電極部20〇b、上面由蓋、下 面由電漿所包圍之導波管。雖於導波管内存在有高頻電 場，但於導波管外則不存在。亦即，高頻電場係存在於 導波管205以及電極對200之下面，但不存在於電極對 200之側面等。從而，由於無需將電極以絕緣體、屏蔽 物來被覆，故構造變得極為單純。 由於電極部200a、200b處於接地狀態，故氣體供 給用配管等連接於電極之配管無需相對於GND呈絕 緣，能以金屬配管來直接連接。再者，只要從電漿所流 入之熱能經由電極而逃逸至蓋105,則無須於電極對 200設置冷媒流路，構造變得極為單純。 VHF (Very High Frequency)頻帶由於較電漿處理 裝置所使用之通常的高頻電源之頻帶來得高，故波長變 短。於此狀態下，第1電極部2〇〇a以及第2電極部2〇〇b 雖上部短路且連接於GND，惟藉由將電極在高度方向 (裝置之縱向）之長度予以適當化，可對導波管下部施 加高頻電場，進而可提高電極下部之排氣狹縫部分的阻 抗。藉此，可將鄰接之電極對2〇〇予以電性分離，來獨 立控制各電極對200之電漿露出面的電場強度。 如以上所說明般，依據第丨實施形態之電漿處理裝 置10，並非在對向於基板之位置配置和基板電極為相 同程度尺寸之1個大電極，而是配置多數個尺寸受限定S 17 201230888 degrees. In this way, if it is impossible to independently control the electropolymerization excitation intensity for each electrode, a uniform sentence electropolymerization is generated on a large-area substrate. For example, as shown in FIG. 4A, since the electric field intensity of the electrode of the end row (upper stage) is weak, if the slit is connected to the high-frequency power of the coaxial tube of the electrode, the electric field intensity of the inner (lower) electrode of the crucible becomes Strong, electric gatherings are getting worse. In this way, the reason why it is impossible to independently control the plasma of each electrode is that it is transmitted from the coaxial tube and the 9 tanks to the electrodes 900 and 995 and the electricity is again separated by the high frequency. In this way, 'the iff* applied to the coaxial tube connected to an electrode is transmitted to the adjacent electrode. In addition, since the surface wave system is transmitted to the leaving electrode, an unintended surface 2/wave is generated to cause deterioration of plasma uniformity. Furthermore, since a high-frequency electric field is applied to the gap between the electrodes as the part of the Hit, it is unexpectedly electropolymerized. Thus, the supply of power from the outer periphery of the electrode to the electrode of the electrode is accompanied by several problem. (Electrical power supply in the electrode), the three-eighth system divides the electrode into two equal parts in the lateral direction, and releases the high-frequency pair from the middle, and the first electrode portion 2〇〇a and the second electrode portion 2〇〇b are in a frequency. Eight-electrode pairs, between which the electrode portions are formed to release a high-altitude second-read slit. If the electrode pair is regarded as an electrode, it can be regarded as being internally supplied with electricity. The high-frequency surface wave emitted from the dielectric slit is transmitted to the left and right on the surface of the electrode portion. In the first electrode portion 201230888 200a and the second electrode portion 20b, the high frequency electric field is π. Since the impedance of each of the adjacent sets is reversed, the impedance is increased, so that it is transmitted between the two electrodes J 2 〇 0 due to the electrode portion "reflection 34" between the electrode portions. = The surface of the wave is transmitted to the phase control of the excitation intensity, but the perspective of the electro-convergence of each electrode pair independently of Figure 5A and ® 5B is shown, Figure 3A is Figure 5A: 15 = -14 section The view and (4) show the hydroxy mode in the shade to calculate, only the mode in which the left 2 poles are arranged in the longitudinal direction of 2〇0, and the 225 ° graph is from the same J = part. The shaft tube 225 is made high in Fig. 5B only from the upper shaft tube, and only from the same t electrode pair connected to the upper electrode material, the electric field strength 2 + center. The electrode pair of the electrode of the crucible to the end (4) (upper stage) excites a uniform plasma. The mountain is again) as long as the opposite electrode pairs are supplied with an inverse phase =;, which constitutes the frequency of the adjacent two electrodes of the different electrode pairs. In this state, the gap between the pair of electrodes (the discharge slit C) is removed; the 4 # a minute does not generate electric current. & adding the frequency electric field, in this part, that is, in order to prevent the electric field generated in the exhaust slit C from being transmitted to the high-frequency phase of the waveguide 205 of the adjacent electrode pair 200, which is respectively transmitted by the 201230888, is reversely applied by 180°. High frequency electric field. Therefore, in the present embodiment, as shown in Fig. 1, the inner conductor 225a2 disposed in the coaxial tube of the left electrode pair 200 and the inner conductor 225a2 disposed in the coaxial tube of the right electrode pair 200 are arranged in reverse. According to the related configuration, the in-phase high frequency supplied from the high-frequency power source 250 becomes a reverse phase when transmitted to the waveguide 205 via the coaxial tube. Further, when the inner conductors 225a2 are arranged in the same direction, by applying the high frequency of the reverse phase from the frequency power supply 250 to the adjacent electrode pairs, the high frequency electric field applied to the lower surface of the electrode pair 2 In the same direction, the high-frequency electric field can be adjusted to 〇 by the exhaust slit c. In the conventional plasma processing apparatus, as shown in Fig. 3B, the inner conductor of the electrode and the inner conductor of the coaxial tube must be covered with an insulator and a shield. This part prevents the generation of plasma and transmits without reflecting high frequencies. It is not easy to cover the large-sized electrode and the inner conductor of the coaxial tube with a gap between the insulator and the shield, and the cost of the device becomes high.曰 Since the heat from the plasma flows into the underside of the electrode, the refrigerant is placed in the refrigerant flow path to enter the heat by the electrode. Since the electrode is applied with a frequency, the piping for supplying the refrigerant to the electrode must be insulated from the (10) D. In addition, a plurality of gas release holes are provided under the electrode to discharge the gas. The pipe for supplying the gas to the electrode must be insulated from the GND. Such a 'fourth secret' (four) extreme saki must be all _ insulated at GND, so the structure becomes complicated. 201230888 On the other hand, in the present embodiment, the upper surfaces of the electrode portions 200a and 2B are short-circuited and are in a grounded state. The waveguide 205 is regarded as a waveguide in which the side surface is surrounded by the first electrode portion 200a and the second electrode portion 20b, and the upper surface is covered by the plasma. Although there is a high frequency electric field in the waveguide, it does not exist outside the waveguide. That is, the high-frequency electric field exists under the waveguide 205 and the electrode pair 200, but does not exist on the side of the electrode pair 200 or the like. Therefore, since it is not necessary to cover the electrode with an insulator or a shield, the structure becomes extremely simple. Since the electrode portions 200a and 200b are in a grounded state, the piping for connecting the electrodes such as the gas supply pipe does not need to be insulated from the GND, and can be directly connected by a metal pipe. Further, as long as the heat energy flowing from the plasma escapes to the lid 105 via the electrode, it is not necessary to provide the refrigerant flow path to the electrode pair 200, and the structure becomes extremely simple. Since the VHF (Very High Frequency) band is higher than the frequency band of the usual high-frequency power source used in the plasma processing apparatus, the wavelength is shortened. In this state, the first electrode portion 2A and the second electrode portion 2b are short-circuited and connected to the GND, but the length of the electrode in the height direction (the longitudinal direction of the device) can be appropriately adjusted. A high-frequency electric field is applied to the lower portion of the waveguide to further increase the impedance of the exhaust slit portion of the lower portion of the electrode. Thereby, the adjacent electrode pairs 2〇〇 can be electrically separated, and the electric field intensity of the plasma exposed surface of each electrode pair 200 can be independently controlled. As described above, the plasma processing apparatus 10 according to the first embodiment is not limited to one large electrode having the same size as the substrate electrode disposed at the position opposite to the substrate, but a plurality of sizes are limited.

S 21 201230888 行高頻供電，而是從c並且並非從電極外周進 行高頻供電，藉此，=内部（介電體狹縫）進 大面積基板上生柄=是如聊頻帶般高頻也能在 需要絕緣，構造^極、連接於電極之配管將不再 電漿處理梦番1間泳化。再者，依據第1實施形態之 導波管。藉由將：雷高頻係從複數同軸管被供電至1個 波，可短，可抑制於導波管咖 =”距與導波管高度） 度11之關:早、供電點Sl、S2、S3之間距與導波管高 6係顯示針對電場強度分布械 擬之結果之_ 與導波管高度之關係進行模 度分布僅針對電極單 為：=/”出對於介電體:缝長邊方向之長度 頻時之1奎由，從4部位之供電點供給60MHz之高 布。此時，將導一 3〇8_、3l〇mm。此^ 為 28Gmm、29Gmm、遍舰、 供電點之間距設定為丨，將濩套寬度設定為〇.6mm，將 如圖6般，堂道# & 中之電場強度在供费》管高度11為280111111之時，護套 ^ 〃電點會成為最大而呈現不均勻的分 22 201230888 布。隨著變高為290mm、300mm逐漸變得均勻，當成 為308mm之時成為最均勻。此時，導波管正好成為截 止狀態’導波管之管内波長成為非常長。再者，若導波 管高度h變高成為310mm，相反地於供電點之電場強 度成為小的分布。 如此般，介電體狹縫長邊方向之電漿之均句性係由 導波管高度與供電點之間距所決定。此外，若高頻電 力、壓力、氣體種類等之電漿激發條件發生變化，由於 電漿之阻抗出現變化，所以電漿均勻性也受到電漿激發 條件之影響。需要即便電漿激發條件有某種程度改變仍 能始終產生均勻電漿之襞置。 當導波管高度h固定之情況下，藉由將供電點之間 距設定為比導波管之管内波長來得充分短則可不受電 漿激發條件之影響而可生成均勻的電漿。例如，於第i 實施形態，導波管之管内波長為2m前後，只要將供電 點之間距設定為300mm程度以下則可得到始終均勻的 電漿。另一方面，當供電點之間距無法成為過短之情 况，只要讓導波管之有效高度成為可變來始終最適化即 可。例如，如圖6般即使供電點之間距長達可藉由 使得導波管高度h最適化來生成均勻的電漿。以下之第 2〜第4實施形態，針對具有可改變導波管有效高度之 機構的電漿處理裝置做說明。 <第2實施形態> 〔電裝處理裝置之構成〕S 21 201230888 line high frequency power supply, but from c and not from the periphery of the electrode for high frequency power supply, whereby = internal (dielectric body slit) into the large area of the substrate on the handle = is as high frequency as the chat band The pipe that can be insulated, the structure is connected, and the electrode is connected to the electrode will no longer be treated by the plasma treatment. Further, the waveguide according to the first embodiment is used. By supplying: Ray high-frequency system from a plurality of coaxial tubes to one wave, it can be short, can be suppressed in the waveguide tube = "distance and the height of the waveguide tube" degree 11: early, power supply point Sl, S2 The distance between the S3 and the height of the waveguide tube 6 shows the relationship between the _ and the height of the waveguide for the electric field intensity distribution. The modulus distribution is only for the electrode single: =/" for the dielectric: seam length The length of the side direction is 1 volt, and the high frequency of 60 MHz is supplied from the power supply point of the four parts. At this time, it will lead to 3〇8_, 3l〇mm. This is 28Gmm, 29Gmm, the distance between the power supply points and the power supply point is set to 丨, and the width of the 濩 sleeve is set to 〇.6mm. As shown in Figure 6, the electric field strength in the hall # & At 280111111, the sheath ^ 〃 electrical point will become the largest and unevenly distributed 22 201230888 cloth. As the height becomes 290 mm and 300 mm gradually becomes uniform, it becomes the most uniform when it becomes 308 mm. At this time, the waveguide is just in the cut-off state. The wavelength inside the tube of the waveguide becomes very long. Further, if the height h of the waveguide becomes high, the electric field intensity at the feeding point becomes a small distribution. In this way, the uniformity of the plasma in the longitudinal direction of the dielectric slit is determined by the height of the waveguide and the distance between the feed points. In addition, if the plasma excitation conditions of high-frequency power, pressure, gas type, etc. change, the plasma uniformity is also affected by the plasma excitation conditions due to changes in the impedance of the plasma. It is necessary to always produce a uniform plasma even if the plasma excitation conditions are changed to some extent. When the height h of the waveguide is fixed, by setting the distance between the feed points to be sufficiently shorter than the wavelength inside the tube of the waveguide, uniform plasma can be generated without being affected by the plasma excitation condition. For example, in the i-th embodiment, the wavelength of the waveguide in the tube is about 2 m, and if the distance between the feed points is set to be about 300 mm or less, a uniform plasma can be obtained. On the other hand, when the distance between the power supply points cannot be too short, it is always necessary to optimize the effective height of the waveguide. For example, as shown in Fig. 6, even if the distance between the feed points is long, uniform plasma can be generated by optimizing the height h of the waveguide. In the following second to fourth embodiments, a plasma processing apparatus having a mechanism capable of changing the effective height of the waveguide will be described. <Second Embodiment> [Configuration of Electrical Equipment Processing Apparatus]

S 23 201230888 針對本發明之第2實施形態之電漿處理裝置概略 構成’參照圖7以及圖8來說明。圖7之左半部為圖8 之3 —'3截面圖’圖7之右半部為圖8之4 一 4截面圖， 圖8為圖7之5—5截面圖。圖7之左半部顯示了無同 軸管之部分之戴面，右半部顯示了有同韩管之截面。如 圖8所示般’本實施形態之電漿處理裝置為一種從 3個同軸管225供給高頻之「多點供電」、此外設有調 整導波管高度之調整機構的裝置。 第2實施形態之電漿處理裝置1〇之基本構成由於 和第1實施形態之電漿處理裝置相同，故以不同構成為 中心來說明。於第2實施形態之電漿處理裝置10，細 長電極對200係於介電體狹縫短邊方向以數條平行排 列著。於第1電極部200a以及第2電極部200b之上部， 長邊方向在垂直於圖7紙面之方向上的第i導波板325a 以及第2導波板325b分別由螺絲（未圖示）所固定著。 第1導波板325a以及第2導波板325b係由鋁合金等金 屬所構成。第1導波板325a、第2導波板325b、短路 板355係藉由同-螺絲（未圖示）來固定於金屬製固定 板356。再者，岐板356係藉由螺絲（ 於蓋105。 ^ , 間之間隙係成為導波管205， 其下部係插人有由氧化料所構成之介電體板加。 第2實施形態之電漿處理裝置10，電極對間之門 距短。是以為了確保電極對間之第1排氣流路2= 24 201230888 間’導波板325a、325b之厚度（導波管壁面厚度）係 薄至3mm。於鄰接之電極對間係使得分隔件35〇以絕 緣性螺絲400來固定於導波板325a、325b。分隔件350 可為金屬亦可為絕緣體。 ^如圖7般’於第1電極部200a以及第2電極部200b 係在垂直於紙面之方向上設有長的氣體流路29〇a。於氣 體流路邊之下料衫數氣騎放孔，流經氣體流 路290a之氣體係從氣體釋放孔釋放至基板〇側。本實 鉍形態之電漿處理裝置，由於導波板32Sa、325b薄， k電漿流入電極之熱無法熱傳導至蓋1〇5，故於第丄電 極部200a以及第2電極部2〇〇b在垂直於紙面之方向上 設有長的冷媒流路295a，以冷媒來直接冷卻電極。 電極一基板間之間隔以及電極對間之間距短的本 貫施形態之電漿處理裝置1〇，並未如第丨實施形態之 電漿處理裝置1〇般對向設置同軸管225之内部導體 225a2的空間。是以，如圖7之右半部所示般，使得2 條内部導體225a2連結於内部導體225al之兩側，通過 絕緣環365而將其兩端以螺帽370來固定。内部導體 225a2藉由如此方式來連接於2支鄰接之導波管。内部 導體225a2係以例如鍍錄之銅所形成。 如第1實施形態之電漿處理裝置1〇般（圖υ電 極對間之間距長的類型，同轴管225之内部為大氣。相 對於此，弟2實施形態之電漿處理裝置丨〇，同軸管 之内部成為真空。疋以，同軸管内容易放電。為了防止S 23 201230888 A schematic configuration of a plasma processing apparatus according to a second embodiment of the present invention will be described with reference to Figs. 7 and 8 . The left half of Fig. 7 is 3 - '3 sectional view' of Fig. 8. The right half of Fig. 7 is a sectional view of 4 to 4 of Fig. 8, and Fig. 8 is a sectional view of 5 to 5 of Fig. 7. The left half of Fig. 7 shows the wearing surface of the portion without the same shaft tube, and the right half shows the cross section of the same Han tube. As shown in Fig. 8, the plasma processing apparatus of the present embodiment is a device that supplies a high-frequency "multi-point power supply" from three coaxial tubes 225 and an adjustment mechanism for adjusting the height of the waveguide. The basic configuration of the plasma processing apparatus 1 according to the second embodiment is the same as that of the plasma processing apparatus according to the first embodiment, and therefore, a different configuration will be mainly described. In the plasma processing apparatus 10 of the second embodiment, the elongated electrode pairs 200 are arranged in a plurality of parallel rows in the short side direction of the dielectric slit. In the upper portion of the first electrode portion 200a and the second electrode portion 200b, the i-th waveguide plate 325a and the second waveguide plate 325b in the longitudinal direction in the direction perpendicular to the sheet surface of FIG. 7 are respectively provided by screws (not shown). Fixed. The first waveguide 325a and the second waveguide 325b are made of a metal such as an aluminum alloy. The first waveguide 325a, the second waveguide 325b, and the short-circuiting plate 355 are fixed to the metal fixing plate 356 by the same screw (not shown). Further, the slab 356 is formed by a screw (the gap between the covers 105 and ^ is a waveguide 205, and the lower portion is inserted with a dielectric plate made of an oxidized material. In the plasma processing apparatus 10, the gate distance between the pair of electrodes is short, in order to ensure the thickness of the waveguide plates 325a and 325b (the thickness of the wall surface of the waveguide) between the first exhaust flow path 2 = 24 201230888 between the pair of electrodes. The thickness is as small as 3 mm. The spacers 35 are fixed to the waveguides 325a and 325b by the insulating screws 400 in the adjacent electrode pairs. The spacers 350 may be metal or insulators. The first electrode portion 200a and the second electrode portion 200b are provided with a long gas flow path 29A in a direction perpendicular to the plane of the paper. Below the gas flow path, the number of holes is pulled by the shirt and flows through the gas flow path 290a. The gas system is released from the gas release hole to the side of the substrate. In the plasma processing apparatus of the present embodiment, since the waveguide plates 32Sa and 325b are thin, the heat of the k plasma flowing into the electrode cannot be thermally conducted to the cover 1〇5, so The tantalum electrode portion 200a and the second electrode portion 2b are provided with a long refrigerant in a direction perpendicular to the plane of the paper. The electrode 295a directly cools the electrode by the refrigerant. The plasma processing apparatus 1 of the present embodiment in which the distance between the electrodes and the substrate is short and the distance between the pair of electrodes is not the same as that of the plasma processing apparatus of the first embodiment. The space of the inner conductor 225a2 of the coaxial tube 225 is generally oppositely disposed. Therefore, as shown in the right half of FIG. 7, the two inner conductors 225a2 are coupled to both sides of the inner conductor 225al, and are insulated by the insulating ring 365. The both ends are fixed by a nut 370. The inner conductor 225a2 is connected to two adjacent waveguides in this manner. The inner conductor 225a2 is formed of, for example, plated copper. The plasma processing apparatus of the first embodiment In the same manner, the inside of the coaxial tube 225 is atmospheric. In contrast, in the plasma processing apparatus of the second embodiment, the inside of the coaxial tube becomes a vacuum. Easy to discharge inside the coaxial tube. To prevent

S 25 201230888 此情況，回έ 莖入f胤輛官225之内部係以鐵氟龍、氧化鋁、石常 " ~來埂覆。此外，同轴管225之内部传#& ^ 型環^ Μ大氣側做真空㈣。 係错由〇 擁有針對導波管之截止現象做說明。首先，針對 内波短邊長^之截面的矩科波管之管 水号慮。管内波長λ係以式（1)表示。 雷处λ係自由空間之波長，εΓ係導波管内之比介 :μΓ係導波管内之比磁導率。依據式（1)，可 空間之、'之時，導波管之管内波長始終較自由 短則其 '皮長X來得長。當λ<2&之時，若長邊長度a變 ^内波長Xg變長。當人==2a之時、亦即當長邊長 / 〇 屬 V, ρ、 2 ，於自由空間之波長λ的1/2，則分母成為〇， ^ '長k成為無限大。此時導波管係成為截止狀 態’傳輪於導波管内之f磁波的減速度為無限大，群 2度f為〇。再者，當λ>23 ’由於電磁波將不復能傳 别於t波官内，惟可進入某種程度之距離。此外，一般 此狀"也稱為戴止狀態’惟此處係將λ= 2a t時定為截 止狀態。 於第2實施形態之電漿處理裝置1()，導波管2〇5 /視為將矩形導波管在長邊方向作2等分之傳送路 =。亦即，於圖7中導波管205之短邊相當於矩形導波 管之短邊，導波管2〇5之長邊相當於矩形導波管之長邊S 25 201230888 In this case, the internals of the 225 stems into the 胤 胤 225 are covered with Teflon, alumina, and stone. In addition, the inside of the coaxial tube 225 is passed through the #&^ type ring ^ Μ atmospheric side to do vacuum (four). The error is due to the fact that the cut-off phenomenon of the waveguide is explained. First of all, the tube of the momental wave tube of the cross section of the short side of the inner wave is considered. The in-tube wavelength λ is expressed by the formula (1). The wavelength of the λ-series free space in the mine, and the ratio in the ε-Γ-guided waveguide: the specific permeability in the μΓ-based waveguide. According to the formula (1), when the space is ', the wavelength inside the tube of the waveguide is always shorter than the length, and the length of the skin is longer than X. When λ < 2 &, if the length of the long side a becomes ^ the wavelength Xg becomes longer. When the person == 2a, that is, when the long side length / V V, ρ, 2, 1/2 of the wavelength λ of the free space, the denominator becomes 〇, ^ 'long k becomes infinite. At this time, the waveguide tube is turned off. The deceleration of the f magnetic wave in the waveguide is infinite, and the group 2 degree f is 〇. Furthermore, when λ > 23 ’ is unable to pass the electromagnetic wave to the t-wave official, it can enter a certain distance. In addition, the general condition "also referred to as the wearing state' is here to set the λ = 2a t as the cutoff state. In the plasma processing apparatus 1 () of the second embodiment, the waveguide 2〇5 is regarded as a transmission path in which the rectangular waveguide is equally divided into two in the longitudinal direction. That is, in Fig. 7, the short side of the waveguide 205 corresponds to the short side of the rectangular waveguide, and the long side of the waveguide 2〇5 corresponds to the long side of the rectangular waveguide.

26 201230888 ，。藉由調整導波管2〇5之高度（長邊長度）使 付：波管205 f為截止狀態，只要在垂直於紙面之方向 上輸於導波官2G5中之高頻波長能充分長，則沿著介 ΙΪΪ縫之長邊方向釋放均⑽高頻電場而激發均句 、电水由於電漿之阻抗會隨條件而改變，故為了實現 ===件仍能始終生成均勻魏之裝置，必須有可 改變導波官205之高度的機構。 第2實施形態之電漿處縣置1()，藉由使得導波 上壁成為可動，以改變導波管205之高度。於 之上部係播人有使得第1導波板325a以及 ;325b成為短路之金屬刷320。金屬刷320 、磷青銅等具備彈簧性之金屬所形成。導波 3^20 d f f為金屬刷320之位置。於複數之金屬刷 1 1 ^ 持棒33〇係連結於第2支持棒335 於驅動機構31。。於第上=: 320以及金Γ以波紋管鳩做真空密封。驅動金屬刷 管之m刷320之驅動機構310係調整傳輸於導波 々:巧:的調整機構之一例。此外，金屬刷320相 田於使付2個電極部短路之金屬構件。 使得if:320為可動式，以驅動機構310之動力來 吏仔第1支持棒330上下動作，藉此連結 33〇之複數金屬刷32〇可一體地上下動、 、 ^皮^度。金屬刷32〇之可動範圍係從介電體板26 201230888,. By adjusting the height (length of the long side) of the waveguide 2〇5, the wave tube 205f is in an off state, as long as the high frequency wavelength of the waveguide 2G5 is sufficiently long in the direction perpendicular to the plane of the paper, Then, the (10) high-frequency electric field is released along the longitudinal direction of the quilting, and the uniform sentence and the electric water are changed according to the condition of the plasma. Therefore, in order to realize the === component, the uniform Wei device can always be generated. There must be a mechanism that can change the height of the guide 205. In the second embodiment, the plasma is placed at 1 (), and the height of the waveguide 205 is changed by making the upper wall of the guided wave movable. The upper broadcaster has a metal brush 320 that causes the first waveguide plates 325a and 325b to be short-circuited. A spring-like metal such as a metal brush 320 or phosphor bronze is formed. The guided wave 3^20 d f f is the position of the metal brush 320. The plurality of metal brushes 1 1 ^ the holding rods 33 are coupled to the second support rods 335 to the drive mechanism 31. . On the first =: 320 and the gold plaque is vacuum sealed with a bellows. The driving mechanism 310 for driving the m brush 320 of the metal brush is an example of an adjustment mechanism that is transmitted to the guided wave. Further, the metal brush 320 is in contact with a metal member that short-circuits the two electrode portions. The if: 320 is movable, and the first support bar 330 of the clams is moved up and down by the power of the drive mechanism 310, whereby the plurality of metal brushes 32 连结 connected to each other can be moved up and down integrally. The movable range of the metal brush 32〇 is from the dielectric plate

S 27 201230888 之上面到蓋105之下面。金屬刷32〇之介電體狹縫 方向之長度雖和電拖對之長度大致相同，但亦 可車乂短。此外’亦可於同-導波管2G5插人複數的短金 屬刷320。 右從介電體狹縫來觀看電漿側之阻抗假使為無限 大’則導波管205可視為矩形導波管沿長邊方向剛好2 等7刀之傳送路徑。從而，當導波管2〇5之高度為λ之時， 亦即導波官205之介電體狹縫之法線方向之電氣長度 剛好為π/2之時，管内波長^會成為無限大。但是， 貝際上從介電體狹縫觀看電漿側之阻抗為電容性，故管 内波長成為無限大之導波管205在介電體狹縫之法 線方向上之電氣長度較π/2來得小。 實際上進行電漿處理之時，通常無法測定導波管 205内之電磁場分布、電漿之分布。必需採行從電漿處 理裝置之外部來間接地檢測戴止狀態而控制導波管205 之面度的作法。如後述般，藉由使得各部之尺寸最適 化，當成為戴止狀態時從供給高頻之同軸管225所見到 之反射係數之絶對值可成為最小。亦即，只要測量從同 軸管225所見到之反射，調節導波管高度使得反射成為 最小，則可始終得到均勻的電漿。 是以’於本實施形態’在整合器245與同軸管225 之間裝設反射計300 ’監測從同軸管225所見到之反射 狀態。反射計300所得到之檢測值係被送往控制部 305。控制部305基於檢測值對驅動機構310發出指令S 27 201230888 is above the cover 105. The length of the slit of the dielectric brush 32 大致 is substantially the same as the length of the electric drag pair, but it can also be short. Further, a short metal brush 320 may be inserted into the same-waveguide tube 2G5. The right impedance is observed from the dielectric slit to the plasma side, and the waveguide 205 can be regarded as a transmission path of the rectangular waveguide which is exactly 2 in the longitudinal direction. Therefore, when the height of the waveguide 2〇5 is λ, that is, when the electrical length of the normal direction of the dielectric slit of the waveguide 205 is exactly π/2, the wavelength in the tube becomes infinite. . However, the impedance of the plasma side viewed from the dielectric slit is capacitive, so that the electrical length of the waveguide 205 in which the wavelength of the tube becomes infinite is π/2 in the normal direction of the dielectric slit. Come small. Actually, when the plasma treatment is performed, the electromagnetic field distribution and the distribution of the plasma in the waveguide 205 are usually not measured. It is necessary to adopt a method of indirectly detecting the wearing state from the outside of the plasma processing apparatus to control the face of the waveguide 205. As described later, by optimizing the size of each portion, the absolute value of the reflection coefficient seen from the coaxial tube 225 supplying the high frequency can be minimized when it is in the wearing state. That is, as long as the reflection seen from the coaxial tube 225 is measured and the height of the waveguide is adjusted so that the reflection is minimized, uniform plasma can always be obtained. In the present embodiment, a reflectometer 300 is mounted between the integrator 245 and the coaxial tube 225 to monitor the reflected state seen from the coaxial tube 225. The detected value obtained by the reflectometer 300 is sent to the control unit 305. The control unit 305 issues an instruction to the drive mechanism 310 based on the detected value.

28 201230888 來使得第1支持棒330上下動作以讓反射成為最小。若 藉由驅動機構310之驅動力使得第1支持棒33()上下動 作’則金屬刷320將隨之上下動作，從而調整導波管高 度使得從同軸管225所見到之反射成為最小。此外，由 於經由以上之控制，反射可始終壓低，故亦可省略整合 器245之設置而將高頻電源250與同軸管225加以直接 連接。反射計可為僅測量反射電力、反射係數之絶對 值，亦可包括相位進行測量。 如以上所說明般，依據第2實施形態之電漿處理 裴置10，藉由使得金屬刷上下動，來充分加長導波管 之管内波長，可於電極之長邊方向激發均勻的電漿。由 於即便拉長供電點之間距仍可生成均勻的電漿，故相較 於第一實施形態，可顯著減少電極、同軸管、整合器、 高頻電源等之數量。 σ ° ' <第3實施形態> L电果爽埋衮置之構成〕 本發明之第3實施形態之截止類型之電漿處理 置1〇，在取代金屬刷改用介電體柱塞(plunger)這點^ :別於第2實施形態。從而’以此差異點為中心斟 發明之第3實施形態之電祕理裝置之概略炎 二、圖9以及圖1()來說明。目9之左半部係圖ι。之二 =面圖，圖9之右半部係圖1〇之7—7截面圖，圖U j 9之8-8截面圖。圖9之左半部係顯示無同 4为之截面，右半部係顯示有同軸管之部分之戴面。28 201230888 The first support bar 330 is moved up and down to minimize reflection. When the first support rod 33 () is moved up and down by the driving force of the drive mechanism 310, the metal brush 320 will move up and down, thereby adjusting the height of the waveguide so that the reflection from the coaxial tube 225 is minimized. Further, since the reflection can be always depressed by the above control, the arrangement of the integrator 245 can be omitted to directly connect the high-frequency power source 250 to the coaxial tube 225. The reflectometer can measure only the reflected power, the absolute value of the reflection coefficient, or the phase. As described above, according to the plasma processing apparatus 10 of the second embodiment, by sufficiently moving the metal brush up and down, the wavelength inside the tube of the waveguide can be sufficiently lengthened, and uniform plasma can be excited in the longitudinal direction of the electrode. Since uniform plasma can be generated even if the distance between the power supply points is elongated, the number of electrodes, coaxial tubes, integrators, high frequency power supplies, and the like can be remarkably reduced as compared with the first embodiment. σ° ' <Third Embodiment> L-electric fruit immersion device configuration] According to the third embodiment of the present invention, the plasma treatment of the cut-off type is set to 1 〇, and the dielectric plunger is replaced by a metal brush. (plunger) This point is different from the second embodiment. Therefore, the outline of the electric secret device according to the third embodiment of the invention will be described with reference to this difference point. Fig. 9 and Fig. 1( ). The left half of the head is the figure ι. The second part = the top view, the right half of Fig. 9 is a 7-7 sectional view of Fig. 1 and Fig. U j 9 is a sectional view of 8-8. The left half of Fig. 9 shows the section of the same section, and the right half shows the part of the coaxial tube.

S 29 201230888 於導波板325a、325b間之介電體狹縫上部係取代 ^屬刷而插人了介電齡塞細。介電齡塞細係由 氧化銘等介電體所形成。第1導波板325a以及第2導 波板325b係因短路板奶而短路。於複 36〇係貫财由介電體所構紅第丨支持棒^體^ 支持棒330係'連結於第2支持棒335,於第2支持棒335 上部設有驅動機構310。於第2支持棒335與芸1〇5 間係以波紋管340來真空密封著。 介電體柱塞360為可動式，第1支持棒330科由 =動機構31G之動力而上下動從而介電體柱塞360 ^ 一 f上下動。藉此’可改變導波管之有效高度。由於導波 Ϊ上上部方呈 =，波板咖，當中之下方電場 蚀上万包％弱。疋以，介電體柱塞3 =:ί、)則導波管之有效高度變得愈二= 二 忍罪近上方（亦即電場弱之處）則導波管之 效兩度變得愈低。介電齡塞細缝 =專輸物㈣臟 ^板”。電體柱塞360相當於設置在導波管之調整用介電 截止狀藉=二柱塞：:位置使得導波管成為 ^ 長度2m以上之電極上激發極為均勻的 =值=止:態r同軸管所見到之反射係 反射成為最!;故只需移動介電體柱塞360使得 201230888 <第4實施形態> 〔電漿處理裝置之構成〕 第2以及第3實施形態之截止類型之電鞔處理穿 置10，由於在真空中使得作為可動構件之金屬刷32〇二 ”電體柱塞360上下動，故可能發生粉塵而污染處理— 内。 、至 對此，本發明之第4實施形態之截止類型之電漿 處理裝置10,為了避免處理室内之汚染而取代金屬刷 320、介電體柱塞36〇改用阻抗可變電路。從而，以下 以阻抗可變電路為中心來針對本發明之第4實施形熊 之電漿處理裝置之概略構成參照圖u以及圖12 ^二 月圖11之左半部為圖12之9一9截面圖，圖I!之右 半部為圖12之1〇一10截面圖，圖12為圖u之^一 11截面圖。 於導波板325a、325b間之介電體狹縫下部插入有 介電體板210。於介電體狹縫上部未插入可動構件。於 ^實施形態’為了電性改變有效的導波管高度而設有阻 抗可變電路380。除了配置於介電體狹縫長邊方向之供 給，頻的3支同轴管225以外，於該等之間設有2支同 軸官385來分別連接2個阻抗可變電路380。 阻抗可變電路380之構成例如圖13所示般可舉出 僅有可變電谷盗之構成（38〇a)、可變電容器與線圈並 聯之構成（380b)、可變電容器與線圈串聯之構成（38〇c) 等。 31 201230888 於本實施形態同樣地’當成為戴止狀態時，係調 節導波管之有效高度以使得從同軸管225所見到之反 射成為最小。此外，即使於程序中亦調節導波管之有效 咼度為佳。是以，於本實施形態，於整合器245與同轴 管225之間安裝反射計3〇〇，監測從同軸管225所見到 之反射狀態。反射計300所得之檢測值係送往控制部 305。控制部305基於檢測值發出指令來調整阻抗可變 電路380。藉此調整導波管之有效高度使得從同轴管 225所見到之反射成為最小。此外，由於採行以上控制 可將反射係數相當地廢低，故亦可省略整合器245之設 ，。阻抗可變電路380係對於經由同軸管而傳輸於導波 官之高頻波長進行調整之調整機構之一例。 <第5實施形態> 〔電漿處理裝置之構成〕 本發明之第5實施形態之電漿處理裝置1〇，配置 於"電體狹縫之長邊方向上的複數同軸管225之間具 有分隔板265這點係和第丨實施形態不同之處。是以， 以此相異點為中心來針對本發明之第5實施形態之電 漿處理裝置概略構成參照圖14做說明。圖14係圖i之 2 —2截面圖，圖i係圖μ之1 — 1截面圖。 如圖14所示般’於相鄰之同軸管225之間，電極 部200a、200b係於介電體狹縫之長邊方向分離著，於 分離部分設有狹縫狀之間隙。於此間隙，由氧化鋁等絕 緣體所構成之分隔板265係插入於介電體狹縫之短邊 32 201230888 來二宠如此般，若將電極部200a、200b以分隔板265 分^ °彳，將導波管205在介電體狹縫長邊方向上作電性 ^將則可針對每個供電關立地改變傳輸電力，來提 盔带水刀布之控制性。其中，電極部200a、20肋亦可 介電體狹縫長邊方向上完全分離。例如亦可僅於 处你Ϊ之下部設置狹縫狀間隙。此外，狹縫狀間隙只要 『侍電場強之電極部之下部侧被分隔板265所阻塞 ^ ’電場弱之電極部之上部财可為空洞。當然亦可 14所7^般’將狹縫狀之間隙以分隔板265來完全 工⑺况a奴…队爆合貫施形態之電漿處理裝 0’即便電㈣發頻率成為高頻化仍可於大面積基 板上激發均勻的電漿。 、 …，、上參”、、所附圖式針對本發明之較佳實施形離 坪細地說明了 ’惟本發明不限定於相關例。本發明所i 具Λ通常知識者’當然可在申請專利範圍所 。載之技術一之範疇内思及各種變更例或是修正 例，此等當然也屬於本發明之技術範圍。 ^ 工q个丨及於園2所示般不且 隔板265而具有電極部2〇^ ^刀 丨20〇a、200b之2個電極部的電 極對200。例如’如圖14、阁 电 M 14圖15所不般，即便是2偭 電極部以複數分離’於分離之部分具有分隔板265 :也包含在具有2個電極部之本發明之電極對之範·S 29 201230888 The upper part of the dielectric slit between the waveguide plates 325a and 325b is replaced by a dielectric brush. The dielectric age is formed by a dielectric such as Oxide. The first waveguide 325a and the second waveguide 325b are short-circuited by short-circuiting the milk. The second support rod 335 is connected to the second support rod 335, and the drive mechanism 310 is provided on the upper portion of the second support rod 335. The second support rod 335 and the 芸1〇5 are vacuum-sealed by a bellows 340. The dielectric plunger 360 is movable, and the first support rod 330 is moved up and down by the power of the movable mechanism 31G, and the dielectric plunger 360 ^ f is moved up and down. By this, the effective height of the waveguide can be changed. Since the upper side of the guided wave is =, the wave plate is less than 10,000 yuan. , ,, dielectric plug 3 =: ί,) then the effective height of the waveguide becomes more than two = two sin near the top (that is, the electric field is weak), the effect of the waveguide becomes more and more low. Dielectric age plug thin seam = special transmission (four) dirty ^ board". The electric body plunger 360 is equivalent to the dielectric cut-off shape set in the waveguide, the second plunger:: position makes the waveguide become ^ length The excitation on the electrode of 2m or more is extremely uniform = value = stop: the reflection of the reflection system seen by the coaxial r-coaxial tube becomes the most! Therefore, it is only necessary to move the dielectric plunger 360 so that 201230888 <Fourth Embodiment> [Configuration of the slurry processing apparatus] The electric power processing insertion 10 of the cut-off type of the second and third embodiments may occur because the metal brush 32 as the movable member is moved up and down in a vacuum. Dust and pollution treatment - inside. In this regard, the plasma processing apparatus 10 of the cut-off type according to the fourth embodiment of the present invention replaces the metal brush 320 and the dielectric plug 36 with an impedance variable circuit in order to avoid contamination in the processing chamber. Therefore, the schematic configuration of the plasma processing apparatus for a bear according to the fourth embodiment of the present invention will be described below with reference to FIG. 9 and FIG. 12, and the left half of FIG. 9 is a cross-sectional view, the right half of Fig. I! is a cross-sectional view of Fig. 12, and Fig. 12 is a cross-sectional view of Fig. 11. A dielectric plate 210 is inserted into the lower portion of the dielectric slit between the waveguide plates 325a and 325b. No movable member is inserted into the upper portion of the dielectric slit. In the embodiment, the impedance variable circuit 380 is provided for the height of the waveguide effective for electrical change. In addition to the three coaxial tubes 225 disposed in the longitudinal direction of the dielectric slit, two coaxial members 385 are provided between the two, and two impedance variable circuits 380 are connected. The configuration of the variable impedance circuit 380 is as shown in FIG. 13, for example, a configuration in which only a variable electric thief is formed (38〇a), a configuration in which a variable capacitor and a coil are connected in parallel (380b), and a variable capacitor and a coil are connected in series. The composition (38〇c) and so on. 31 201230888 In the same manner as in the present embodiment, when the wearing state is set, the effective height of the waveguide is adjusted so that the reflection seen from the coaxial tube 225 is minimized. In addition, it is preferable to adjust the effective mobility of the waveguide even in the program. Therefore, in the present embodiment, the reflectometer 3 is mounted between the integrator 245 and the coaxial tube 225, and the reflected state seen from the coaxial tube 225 is monitored. The detected value obtained by the reflectometer 300 is sent to the control unit 305. The control unit 305 issues an instruction based on the detected value to adjust the impedance variable circuit 380. Thereby the effective height of the waveguide is adjusted such that the reflection seen from the coaxial tube 225 is minimized. In addition, since the reflection coefficient can be made relatively low due to the above control, the arrangement of the integrator 245 can also be omitted. The variable impedance circuit 380 is an example of an adjustment mechanism for adjusting the high-frequency wavelength transmitted to the waveguide by the coaxial tube. <Fifth Embodiment> [Configuration of Plasma Processing Apparatus] The plasma processing apparatus 1 according to the fifth embodiment of the present invention is disposed in a plurality of coaxial tubes 225 in the longitudinal direction of the electric power slit. The difference between the partition plate 265 and the third embodiment is different. The schematic configuration of the plasma processing apparatus according to the fifth embodiment of the present invention will be described with reference to Fig. 14 based on the difference. Figure 14 is a cross-sectional view taken along line 2-2 of Figure i, and Figure 1 is a cross-sectional view taken along line 1-1 of Figure 1. As shown in Fig. 14, between the adjacent coaxial tubes 225, the electrode portions 200a and 200b are separated in the longitudinal direction of the dielectric slit, and a slit-like gap is provided in the separated portion. In this gap, the partition plate 265 made of an insulator such as alumina is inserted into the short side of the dielectric slit 32 201230888. If the electrode portions 200a and 200b are separated by a partition plate 265,彳, the conductivity of the waveguide 205 in the longitudinal direction of the dielectric slit can change the transmission power for each power supply to improve the controllability of the waterjet knife. Here, the ribs of the electrode portions 200a and 20 may be completely separated in the longitudinal direction of the dielectric slit. For example, a slit-like gap may be provided only at the lower portion of your jaw. Further, the slit-like gap may be hollow as long as the upper portion of the electrode portion where the electric field is strong is blocked by the partition plate 265. Of course, it is also possible to use 14 slits in the slit-like gap to completely work on the partition plate 265. (7) Condition a slave... The battery is equipped with a plasma treatment device that does not even have a high frequency. A uniform plasma can still be excited on a large area substrate. The present invention is not limited to the related examples, but the present invention is not limited to the related examples. The present invention is not limited to the related examples. It is also within the technical scope of the present invention to consider various modifications or examples within the scope of the technical scope of the present invention. ^ The work is not as shown in the garden 2 and the partition 265 The electrode pair 200 having two electrode portions of the electrode portions 2 ^ ^ ^ ^ 20 〇 20 〇 a, 200 b. For example, as shown in Fig. 14 and Fig. 15 of Fig. 15, even the two electrode portions are separated by a plurality of electrodes. 'The partitioning plate 265 is provided in the separated portion: it is also included in the electrode pair of the present invention having two electrode portions.

S 33 201230888 此外，上述各實施形態之電漿處 數同軸管係以一對一方式連接 巢置，對於複 本發明不限定於相綠例如，亦二f、整合器，惟 1台之高頻電源連接複數_管。亦^使用分岐而於 1台高頻電源之輸出分別經由整合將來自多輸出之 當使用複數整合器之情況，可對每i ^電於同轴管。 亦可將所有之整合器加以集中控制^仃獨立控制， 極對數量亦不限定於相關例。再者，^ ’所配置之電 般，高頻電源係由第！高頻電源2、、可如圖b所示 2篇(所輪出之高頻率的高頻較從^ 2高頻電源 =高頻率的高頻來得高）這2個高=25〇a所輸出 得從第1高頻電源250a所輸出之低率'二構成’而使 高頻電源250b所輸出之高頻至丰的鬲頻與從第2 遠脉η 料的，相重疊來供A。 可變電路、Lr綺期之高頻施加用同軸管225、^抗 :例。於上述實施形態中，導波管2。5以 ζ對於電極部施、鳩之電漿露出面A係呈垂 200 ^ ^亦可非垂直而是在中^曲。此外，電極對 對200 ^ f或是t電體板21G亦可和其他之電極 電極對= 皮官2〇5或是介電體板210相連接著。構成 2極對200 < 2個電極部係上部短路而接地著 未短路、接地亦可。 …此外’連結高頻電源與電極之間的傳遞路徑可為矩 形導波管、同歸、同減纜、_導波管朗柄管之S 33 201230888 In addition, the number of the coaxial tubes of the plasma according to the above embodiments is connected in a one-to-one manner, and the present invention is not limited to the phase green, for example, the f, the integrator, and only one high frequency power supply. Connect the complex _ tube. Also, the output of one high-frequency power supply is used separately from the multi-output. When the complex integrator is used, it can be used for the coaxial tube. All integrators can also be centrally controlled and controlled independently. The number of pole pairs is not limited to the relevant examples. Furthermore, ^'' is configured as the power, the high-frequency power supply is the first! The high-frequency power supply 2 can be output as shown in Figure b (the high frequency of the high frequency is higher than the high frequency power of the high frequency = high frequency). The low frequency 'two configuration' output from the first high frequency power supply 250a is such that the high frequency power supply 250b outputs a high frequency to a high frequency and overlaps with the second far pulse material to provide A. Variable circuit, Lr cycle high frequency application coaxial tube 225, ^ resistance: for example. In the above embodiment, the waveguide 2, 5 is applied to the electrode portion, and the plasma exposed surface A of the electrode is 200 ^ ^, which may be non-vertical but in the middle. In addition, the electrode pair 200 ^ f or the t-electrode plate 21G may be connected to other electrode electrode pairs = picostat 2 or 5 or dielectric plate 210. The two pole pairs 200 < two electrode sections are short-circuited to the upper part, and the grounding is not short-circuited or grounded. ...in addition, the transmission path between the high-frequency power source and the electrode can be a rectangular waveguide, the same return, the same cable, and the _wave tube

34 201230888 組合的任一者。 【圖式簡單說明】 圖1係本發明之第態 截面圖（圖2之卜!截面）。--處理裝置之縱 二二:)施形態之電浆處理裝置之縱截面圖 高：係用以說明對第1實施形態之電極所施加之 之圖 圖3Β係用以說明對習知構造之電極所施加之高 頻 圖4Α係顯示習知構造之電極下面的護套 電場強度分布之圖（從所有的同轴管供給高頻之情 β圖4Β係顯示習知構造之電極下面的護套中之高頻 電％強度分布之圖（僅從上段之同軸管供給高頻之情 _圖5Α係顯示第1實施形態之電極下面的護套中之 向頻電場強度分布之圖（從所有的同軸管供給高頻之情 況）。 _圖5Β係顯示第1實施形態之電極下面的護套中之 阿頻電場強度分布之圖（僅從上段之同軸管供給高頻之 情况）。 圖6係顯示電極部高度與電場強度分布之關係圖。 圖7係本發明之第2實施形態之電漿處理裴置之縱 戴面圖（圖8之3 — 3、4—4截面）。34 201230888 Any of the combinations. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view of the first aspect of the present invention (Fig. 2; cross section). - Longitudinal section of the processing apparatus: The longitudinal section height of the plasma processing apparatus is used to illustrate the application of the electrode of the first embodiment. FIG. 3 is used to illustrate the conventional structure. The high frequency applied by the electrodes is a diagram showing the electric field strength distribution of the sheath under the electrode of the conventional configuration (the high frequency is supplied from all the coaxial tubes. Fig. 4 shows the sheath under the electrode of the conventional configuration) Diagram of the high-frequency electric power intensity distribution in the middle (only the high-frequency power is supplied from the coaxial tube in the upper stage). Fig. 5 shows the distribution of the electric field intensity distribution in the sheath under the electrode of the first embodiment (from all the The coaxial tube is supplied with a high frequency. _ Fig. 5 shows a distribution of the amplitude of the electric field in the sheath under the electrode of the first embodiment (only when the high frequency is supplied from the coaxial tube in the upper stage). Fig. 7 is a longitudinal cross-sectional view of the plasma processing apparatus according to the second embodiment of the present invention (Fig. 3, 3, 3, 4-4 cross section).

S 35 201230888 圖8係第2實施形態之電聚處壞裝置之縱截面圖 (圖7之5 — 5截面）。 圖9係本發明之第3實施形態之電漿處理裝置之縱 截面圖（圖10之6 — 6、7 — 7截面）。 圖10係第3實施形態之電黎處理裴置之縱截面圖 (圖9之8 — 8戴面）。 圖11係本發明之第4實施形態之電激處理裝置之 縱截面圖（圖12之9-9、10—10戴面）。 圖12係第4實施形態之電t處科置之縱截面圖 (圖11之11 —11戴面）。 圖13係顯示第4實施形態之阻抗可變電路例之圖。 圖14係第5實施形態之錢處理裝置之縱截面圖 (圖1之2 —2戴面圖）。 圖15係變形例之電漿處理裳置之縱戴面圖。 【主要元件符號說明】 10 電漿處理裝置 1〇〇 真空容器 105 蓋 200 電極對 200a第1電極部 200b第2電極部 205 導波管 210 介電體板 215 第2介電體蓋件 36 201230888 220 第1介電體蓋件 225,385 同軸管 225al,225a2,385al,385a2 225b,385b 外部導體 245 整合器 250 ifj頻電源 265 分隔板 281 第1排氣流路 283 第2排氣流路 285 第3排氣流路 290a 氣體流路 295a 冷媒流路 300 反射計 305 控制部 310 驅動機構 320 金屬刷 325a 第1導波板 325b 第2導波板 330 第1支持棒 335 第2支持棒 355 短路板 356 固定板 360 介電體柱塞 380 阻抗可變電路 内部導體S 35 201230888 Fig. 8 is a longitudinal sectional view of the electropolymerization device of the second embodiment (Fig. 5, 5 - 5 section). Fig. 9 is a longitudinal sectional view showing a plasma processing apparatus according to a third embodiment of the present invention (Fig. 6-6-6, 7-7 cross section). Fig. 10 is a longitudinal sectional view of the electric power processing apparatus of the third embodiment (8-8 of the wearing surface of Fig. 9). Fig. 11 is a longitudinal sectional view of the electric shock treatment device according to the fourth embodiment of the present invention (9-9, 10-10 wearing surface of Fig. 12). Fig. 12 is a longitudinal sectional view of the electric device of the fourth embodiment (11-11 of Fig. 11). Fig. 13 is a view showing an example of an impedance variable circuit of the fourth embodiment. Fig. 14 is a longitudinal sectional view of the money processing apparatus of the fifth embodiment (Fig. 1 2-1). Fig. 15 is a longitudinal sectional view showing a plasma treatment dressing of a modification. [Description of main component symbols] 10 Plasma processing apparatus 1 〇〇 Vacuum vessel 105 Cover 200 Electrode pair 200a First electrode part 200b Second electrode part 205 Waveguide tube 210 Dielectric plate 215 Second dielectric cover member 36 201230888 220 1st dielectric cover 225, 385 coaxial tube 225al, 225a2, 385al, 385a2 225b, 385b external conductor 245 integrator 250 ifj frequency power supply 265 partition plate 281 first exhaust flow path 283 second exhaust flow path 285 3 exhaust flow path 290a gas flow path 295a refrigerant flow path 300 reflectometer 305 control unit 310 drive mechanism 320 metal brush 325a first wave guide plate 325b second wave guide plate 330 first support bar 335 second support bar 355 short circuit plate 356 fixed plate 360 dielectric plunger 380 impedance variable circuit internal conductor

S 37S 37

Claims (1)

201230888 七 申晴專利範圍： L 一種電漿處理裝置，係具雋有. 以及之載置台 、/载置〇上方產生電漿之電漿空 包極對，係具有第1電極部與 個電極部而配置於該電漿空間之上方；。卩廷2 導波管，係形成於該2個電極部間 空間呈狹缝狀開口； 草月-玄電桌 介電體板’係插入於該導、、古总 空間中；以及 4皮皆而露出於該電聚 複數同軸管’用以對該減壓容器之内部供仏用 =發㈣之高頻’配置於該狹縫狀開口之長邊方 问上， 管；其中，係相對於1個該電極對設有複數同軸 同軸管之内部導體係連接於該2個電 ° 錢數同軸管之外部導體係連接於另 一者； 與從該複數同車由管所供給之高㈣ 輸於該導波 5之4再從該；|電體板之電漿露^面釋放至該減 壓容器内來激發電聚。 2. 如中請專利範圍第1項H處理裝Ϊ，其中該同 軸官之内部導體係貫通於在該介電體板所設之孔。 3. 如申請專利第i項之電_理衫，其中該2201230888 Qishenqing Patent Range: L A plasma processing device with a built-in table, a plasma-filled pole pair that generates plasma above the mounting raft, and a first electrode portion and an electrode portion. And disposed above the plasma space; The 卩廷2 waveguide is formed in a slit-like opening between the two electrode portions; the grass-Xuandian table dielectric plate is inserted into the guide, the ancient space; And the electro-polymerized coaxial coaxial tube is disposed on the long side of the slit-shaped opening for the internal supply of the decompression container to be used for the long-side of the slit-shaped opening, wherein the tube is opposite to the tube One of the electrode pairs is provided with an internal coaxial system of a plurality of coaxial coaxial tubes connected to the external conduction system of the two electric coaxial coaxial tubes to be connected to the other; and the high (four) input supplied from the plurality of identical vehicles by the tube The conductive wave 5 is further discharged from the plasma surface of the electric wave plate to the decompression container to excite electropolymerization. 2. In the case of the H-handling device of the first item of the patent scope, the internal guiding system of the coaxial shaft is connected to the hole provided in the dielectric plate. 3. For example, if you apply for the patent of item i, the 2 201230888 個電極部係在該狹缝狀開口之相反側端部呈短路。 4. 如申請專利範圍第3項之電漿處理裝置，其中該2 個電極部係在該狹缝狀開口之相反側端部和該減 壓容器間呈短路。 5. 如申請專利範圍第1項之電漿處理裝置，其中該2 個電極部係於該狹縫狀開口之長邊方向兩端部呈 未短路。 6. 如申請專利範圍第1項之電漿處理裝置，其中該2 個電極部之電漿露出面以及該介電體板之電漿露 出面係大致同一面。 7. 如申請專利範圍第1項之電漿處理裝置，其中該2 個電極部之電漿露出面的面積大致相等。 8. 如申請專利範圍第1項之電漿處理裝置，其中該複 數同軸管之内部導體與該電極部間之連接部係大 致等間隔地設置於該狹縫狀開口之長邊方向上。 9. 如申請專利範圍第1項之電漿處理裝置，其中該電 極對係具備有將該電極對在該狹縫狀開口側之至 少一部份在該狹缝狀開口之長邊方向上加以分隔 之間隙，於該間隙之至少一部份係插入有由絕緣體 所構成之分隔板。 10. 如申請專利範圍第9項之電漿處理裝置，其中該間 隙係設置於該複數同軸管之内部導體與該電極部 之間的連接部間。 11. 如申請專利範圍第1項之電漿處理裝置，其中該導 39 201230888 波管在該狹縫狀開口之法線方向上的電氣長度為兀 /2以下。 12. 如申請專利範圍第1項之電漿處理裝置，其進一步 具備調整機構，係對於在該導波管傳輸於該狹縫狀 開口之長邊方向上的高頻波長進行調整。 13. 如申請專利範圍第1項之電漿處理裝置，其中複數 該電極對係設有間隙而配置排列於該狹縫狀開口 之短邊方向上。 14. 一種電漿處理方法，其所使用之電漿處理裝置係具 備有：減壓容器，其内部具有載置被處理體之載置 台以及於該載置台上方產生電漿之電漿空間；電極 對，係具有第1電極部與第2電極部這2個電極部 而配置於該電漿空間之上方；導波管，係形成於該 2個電極部間，朝該電漿空間呈狹缝狀開口；以及 複數同軸管，用以對該減壓容器之内部供給用以激 發電漿之高頻，配置於該狹縫狀開口之長邊方向 上； 該電漿處理裝置係相對於1個該電極對設有 複數同軸管；該複數同軸管之内部導體係連接於該 2個電極部之一者，該複數同轴管之外部導體係連 接於另一者； 電漿處理方法具備有下述步驟： 使得高頻經由該複數同軸管而傳輸於在該2 個電極部間所形成之導波管之步驟；以及 40 201230888 將傳輸於該導波管之高頻從設置於該導波管 之介電體板的電漿露出面釋放至該減壓容器内來 激發電漿之步驟。 15. 如申請專利範圍第14項之電漿處理方法，係具備 有下述步驟： 測量步驟，以連結於該複數同軸管之至少一者 的反射計對傳輸於該同軸管之高頻反射或是阻抗 進行測量；以及 調整步驟，控制器基於該測量之反射或是阻抗 之檢測值來對傳輸於該導波管之高頻波長進行調 整。 16. 如申請專利範圍第15項之電漿處理方法，其中該 電漿處理裝置係進一步具備内部導體連接於該2 個電極部之一者、外部導體連接於另一者之調整用 同轴管； 該調整步驟係藉由對連接於該調整用同軸管 之阻抗可變電路進行調整以調整傳輸於該導波管 之面頻波長。 17. 如申請專利範圍第15項之電漿處理方法，其中該 電漿處理裝置具備有使得該2個電極部短路、可在 該狹缝狀開口之垂線方向上移動之金屬構件； 該調整步驟係藉由控制該金屬構件之移動來 調整傳輸於該導波管之高頻波長。 18. 如申請專利範圍第15項之電漿處理方法，其中該 S 41 201230888 電漿處理裝置具備有可在該導波管内於該狹缝狀 開口之垂線方向上移動之調整用介電體板； 該調整步驟係藉由控制該調整用介電體板之 移動來調整傳輸於該導波管之高頻波長。 42The 201230888 electrode portions are short-circuited at the opposite end portions of the slit-shaped openings. 4. The plasma processing apparatus of claim 3, wherein the two electrode portions are short-circuited between the opposite end portions of the slit-shaped opening and the pressure reducing container. 5. The plasma processing apparatus according to claim 1, wherein the two electrode portions are not short-circuited at both end portions in the longitudinal direction of the slit-shaped opening. 6. The plasma processing apparatus of claim 1, wherein the plasma exposed surfaces of the two electrode portions and the plasma exposed surface of the dielectric plate are substantially flush with each other. 7. The plasma processing apparatus of claim 1, wherein the areas of the exposed surfaces of the plasma of the two electrode portions are substantially equal. 8. The plasma processing apparatus according to claim 1, wherein the connection portion between the inner conductor of the plurality of coaxial tubes and the electrode portion is disposed at substantially equal intervals in the longitudinal direction of the slit-shaped opening. 9. The plasma processing apparatus of claim 1, wherein the electrode pair is provided with at least a portion of the pair of slits on the side of the slit-like opening in the longitudinal direction of the slit-shaped opening A gap is formed in which at least a portion of the gap is inserted with a partition plate composed of an insulator. 10. The plasma processing apparatus of claim 9, wherein the gap is disposed between the inner conductor of the plurality of coaxial tubes and the connection between the electrode portions. 11. The plasma processing apparatus of claim 1, wherein the electrical length of the waveguide of the 201230888 wave tube in the normal direction of the slit-shaped opening is 兀 /2 or less. 12. The plasma processing apparatus according to claim 1, further comprising an adjustment mechanism for adjusting a high-frequency wavelength transmitted in a longitudinal direction of the slit-shaped opening of the waveguide. 13. The plasma processing apparatus according to claim 1, wherein the plurality of electrode pairs are arranged in a short side direction of the slit-shaped opening. A plasma processing method, comprising: a pressure reduction container having a mounting table on which a workpiece is placed and a plasma space for generating plasma on the mounting table; Further, the electrode portions having the first electrode portion and the second electrode portion are disposed above the plasma space, and the waveguide is formed between the two electrode portions and is slit toward the plasma space. And a plurality of coaxial tubes for supplying a high frequency for exciting the plasma to the inside of the decompression container, and disposed in a longitudinal direction of the slit-shaped opening; the plasma processing device is opposite to one The electrode pair is provided with a plurality of coaxial tubes; the internal guiding system of the plurality of coaxial tubes is connected to one of the two electrode portions, and the external guiding system of the plurality of coaxial tubes is connected to the other; the plasma processing method has the following a step of: transmitting a high frequency via the plurality of coaxial tubes to a waveguide formed between the two electrode portions; and 40 201230888 transmitting a high frequency transmitted from the waveguide to the waveguide Plasma of dielectric plate Come forward to release the pressure within the container to excite the plasma step. 15. The plasma processing method of claim 14, comprising the steps of: measuring a high frequency reflection transmitted to the coaxial tube by a reflectometer coupled to at least one of the plurality of coaxial tubes The impedance is measured; and the adjusting step is performed by the controller to adjust the high frequency wavelength transmitted to the waveguide based on the reflected value of the measurement or the detected value of the impedance. 16. The plasma processing method according to claim 15, wherein the plasma processing apparatus further comprises an adjustment coaxial tube in which an inner conductor is connected to one of the two electrode portions, and an outer conductor is connected to the other. The adjusting step adjusts the surface frequency wavelength transmitted to the waveguide by adjusting the impedance variable circuit connected to the adjusting coaxial tube. 17. The plasma processing method according to claim 15, wherein the plasma processing apparatus includes a metal member that short-circuits the two electrode portions and is movable in a direction perpendicular to the slit-shaped opening; The high frequency wavelength transmitted to the waveguide is adjusted by controlling the movement of the metal member. 18. The plasma processing method according to claim 15, wherein the S 41 201230888 plasma processing apparatus is provided with an adjustment dielectric board movable in a direction perpendicular to the slit opening in the waveguide. The adjusting step adjusts the high frequency wavelength transmitted to the waveguide by controlling the movement of the adjusting dielectric plate. 42
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