201230427 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種適合於照明之大面積之有機E L元件的 製造方法。 【先前技術】 有機發光元件係藉由對第1電極與第2電極之間施加電壓 而使夾於第1電極與第2電極之間之有機發光層發光者。作 為有機發光元件之有機EL(electr〇 luminescence，電致發 光）元件已應用於以液晶顯示器為代表之平板顯示器。平 板顯示器之像素數較多，因此單個像素較微細。使用有機 EL元件之顯示器之像素亦同樣地較微細，利用微細之蒸鍍 遮罩使有機EL元件圖案化。又，近年來有機EL元件被應 用於固體照明。 固體照明係較顯示器更要求更高亮度之產品。例如，顯 示器所要求之亮度為1，000 cd/m2左右，與此相對固體照明 中要求之壳度為3,000 cd/m2至5,000 cd/m2左右。因此，必 需使每單位面積較大之電流值流過各電極。 使用有機EL元件之顯示器中，一個發光元件之大小不足 1 mm見方。另一方面，使用有機EL元件之固體照明要求 較顯示器更大之光束，因此要求一個發光元件為1〇〇 見 方以上之大小。 有機EL元件中為射出光而需要第1電極及第2電極中之任 一者為透明導電膜。通常設第1電極為透明導電膜。使用 氧化銦錫（ITO，indium tin oxide)等作為透明導電膜之材 156288.doc 201230427 料》ITO雖係透明導電膜之材料 刊Ή·甲體積電阻率最小者，但 與金屬相比ΙΤΟ之體積電阻率明顯較高。 若使包含透明導電膜之有機EL开杜说丄 揭；Ltc件僅大面積地形成而流 過大電流，則會產生元件周邊部舫古 透丨較冗而中央部較暗之現象 (亮斑）。該現象係起因於透明练Φ 处月导電臈之電阻值較高及因大 電流而導致產生電壓降。 為減少㈣降且使亮度均勻，使透明導電膜之膜厚變厚 至100 nm至500 nm左右❿降低薄片電阻值即可。由此可抑 制亮斑。 然而透明導電膜之材料昂貴，若使透明導電膜變厚則會 產生材料成本變高之問題。因此研究如下方法，即於較大 之元件面板内部將發光元件分割為較小之發光元件，並將 、·’呈刀J之元件串聯連接，藉此減小流過各電極之電流（參 照專利文獻1至專利文獻7)。由此可使面板整體之電壓變 高，因而可減小透明導電膜之電阻而減少電壓降。由此即 便為較大之發光面板，亦可降低内部之亮度之分佈。專利 文獻1至專利文獻7中揭示有藉由利用光微影法之圖案化加 工而形成複數個發光元件之方法，及藉由雷射加工而於發 光元件之各層中形成分離槽且形成複數個發光元件之方 法。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2000-29404號公報 [專利文獻2]日本專利特開2008-227326號公報 156288.doc 201230427 [專利文獻3]曰本專利特表2〇1 〇_510626號公報 [專利文獻4]日本專利特開2〇 1 〇_21 〇50號公報 [專利文獻5]曰本專利特開平5_3〇76號公報 [專利文獻6]曰本專利特開平8·222371號公報 [專利文獻7]曰本專利特開2〇〇7·157659號公報 【發明内容】 [發明所欲解決之問題] 專利文獻1中揭示有藉由光微影法而形成有發光元件之 有機EL元件。圖4係表示先前之有機EL元件之構成之概略 剖面圖。圖4中包含第丨電極2/有機發光層3/第2電極4之發 光元件排列配置於基板丨上，鄰接之發光元件之各自之第工 電極2藉由絕緣膜5而電性分離。又，鄰接之發光元件使一 方之發光元件之第1電極2接觸於另一方之發光元件之第2 電極4，此形成串聯連接之有機El元件。 專利文獻1中藉由利用光微影法之圖案化加工等於基板 上形成第1電極。於形成於基板上之第丨電極上使用具有 開口部之蒸鍍遮罩藉由真空蒸鍍而形成有機發光層。於有 機發光層上，使用其他之具有開口部之蒸鍍遮罩藉由真空 蒸鍍而形成第2電極。 藉由圖案化加工而形成之第丨電極之端部成為較陡之剖 面，因此與基板之間產生階差。若將有機發光層積層於該 圖案化周圍之階差部分上，則導致重疊於階差部分之有機 發光層薄膜化而易產生缺陷。因此易產生漏電流或 問題。 寻 156288.doc 201230427 為防止上述問題，於圖案化關之階差部分上藉由光微 影法形成、絕緣膜。專利文船中，於第】電極經圖案化加工 之基板之整個表面塗佈光阻劑並使光阻劑乾燥。其後對欲 加工之圖案罩上曝光遮罩而照射紫外線，經預烘烤、钱 刻、清洗、後烘烤而圖案化加工出高精度之絕緣膜。 光微影法係於半導體或平板顯示器中常用之高精度之加 工技術’但需要大規模且昂貴之製造設備。此外亦需要花 費於光阻劑、钮刻液及清洗液之消耗構件之成本及用於廢 液處理之高額運轉費用。 :利用蒸鍍遮罩之真空蒸鍍可於基板上直接圖案化。然 而若為大型基板’則無法維持高精細之蒸錄遮罩之精度， 因此不適合於作為價格低廉地製造如照明般之大型基板之 方法。 土 專利文獻5至專利文獻7中揭示有藉由雷射加工而使複數 個發光元件串聯連接之有機El元件。 有機EL元件之有機發光層通常設為積層有電洞注入層/ 電洞傳輸層/發光層/電子傳輸層/電子注入層之有機多層 膜。於有機發光層之第i電極側包含電洞傳輸性材料，於 第2電極側包含具有與電洞傳輸性材料相反之性質之電子 傳輸性材料。有機EL元件係以第i電極/電洞注入層/電洞 傳輸層/發光層/電子傳輸層/電子注入層/第2電極之真空連 續成膜而進行製&。尤其^電㈣電洞注入層之界面、 及電子注入層與第2電極之界面對表面狀態及環境非常敏 感，該界面之狀態對元件特性之影響非常大。 156288.doc • 6 · 201230427 若於真空或惰性‘氣體環境中對有機發光層照射雷射，則 可藉由熱蒸發或剝蝕引起之氣化而除去有機發光層。此 時，含有經蒸發或氣化之有機發光層之電洞傳輸性材料之 微粒子飛散’以分子級附著於位於有機發光層表面之電子 ;入層之鏡面。因附著具有不同性質之材料而導致有機肛 元件之發光特性降低。 本發明係雲於上述課題而完成者，其目的在於提供一種 有機EL元件之製造方法，其係藉由雷射加工，而無須利用 叩貝之光微影法製造具有穩定之發光特性之適合於照明用 之有機EL元件。 [解決問題之技術手段] 為解決上述課題，本發明提供一種有機EL元件之製造方 法，其係製造於基板上具有複數個包含第丨電極、有機發 光層及第2電極之發光元件且使鄰接之發光元件彼此電性 串聯連接之有機EL元件之方法，且包括：步驟（A)，於分 割形成有上述第1電極之基板上形成上述有機發光層；步 驟（B) ’於該步驟（A)之後，僅於上述有機發光層上形成特 定厚度之下部第2電極；步驟（c)，於該步驟（B)之後，藉由 雷射加工除去積層於上述第1電極上之有機發光層/下部第 2電極之一部分，而形成將上述有機發光層/下部第2電極 分割為複數個有機發光層/下部第2電極之第1分割槽；步 驟（D)，於該步驟（〇之後，以填埋上述第1分割槽且覆蓋 於上述複數個有機發光層/下部第2電極上之方式形成上部 第2電極；及步驟，於該步驟之後，藉由雷射加工除 156288.doc 201230427 去積層於上述第1電極上之有機發光層/下部第2電極/上部 第2電極之一部分’而形成將上述有機發光層/下部第2電 極/上部第2電極分割為複數個有機發光層/下部第2電極/上 部第2電極之第2分割槽。 根據上述發明，於藉由雷射加工而分離有機發光層時， 有機發光層之上表面被下部第2電極覆蓋，因此可防止藉 由雷射加工而除去之有機發光層飛散並附著於有機發光層 上。藉此可使有機EL·元件之發光特性穩定化。 上述發明之一態樣中，較佳為於上述步驟（B)中使上 述下部第2電極之特定厚度為1 nm以上且100 nm以下。 藉由設為上述構成，可確實地形成有機發光層與下部第 電極之界面，且可藉由雷射加工而一併除去有機發光層 及下部第2電極。 上述發明之一態樣中’較佳為於内部成為真空或惰性氣 體衣丨兄之谷器内，一面對該容器内進行排氣一面進行上述 步驟（C) 〇 由此可將藉由雷射加工而除去之物質排出至容器外，因 而可抑制有機發光層受到汚染。 上述發明之—態樣中，較佳為於内部成為真空或惰性氣 體環境之容器内’一面對該容器内進行排氣一面進行上述 步驟（E)。 由此可將藉由雷射加工而除去之物質排出至容器外因 Η㈣及上部第2電極附著於雷射加工部之 有機發光層剖面。從而可抑制漏電流或短路之產生。 156288.doc 201230427 上述發明之一態樣中，較佳為上述第2電極含有導電陡 ^ π守電性 金屬，且上述步驟（Ε)中於真空或惰性氣體環境中混人 氧氣之環境下進行上述雷射加工。 口 於含氧之環境中進行雷射加工，藉此可使因雷射加 飛散之下部第2電極及上部第2電極之金屬微粒工而 孔化而形 成絕緣體。由此，即便於飛散之下部第2電極及上部第2 極之金屬微粒子附著於有機發光層之側面等之情形時， 可防止漏電流或短路之產生。 亦 上述發明之一態樣中，較佳為以筒狀構件包圍雷射光束 之通過路徑，於該筒狀構件之雷射光束出口側連接括吸路 徑，一面經由該抽吸路徑進行抽吸一面進行雷射加工。 於雷射光束之出口附近即被雷射照射位置之附近進行抽 吸，因此可降低藉由雷射加工而除去之有機發光層或第2 電極（下部第2電極及上部第2電極）飛散並再次附著於加工 部附近等之污染。藉此可抑制漏電流或短路之產生。 [發明之效果] 根據本發明，於有機發光層上形成較薄之下部第2電極 之後，藉由雷射加工而分離有機發光層，因而可防止具有 不同特性之材料附著於有機發光層。由此提供__種有機虹 兀件之製造方法’其係無須利用昂貴之光微影法，且製造 出具有穩定之發光特性之適合於照明用之有機虹元件之方 法0 【實施方式】 以下參照圖式對本發明之有機虹元件之製造方法之一實 156288.doc 201230427 施形態進行說明。 圖1係以本實施形態之製造方法製造之有機EL元件之概 略平面圖。以本實施形態之有機EL元件之製造方法製造之 有機EL元件包含於基板1上依序積層有第1電極2、有機發 光層3及第2電極4之發光元件❶複數發光元件排列配置於 基板上’鄰接之發光元件彼此係藉由使一方之發光元件之 第1電極與另一方之發光元件之第2電極相接觸而進行電性 串聯連接。於各發光元件之第1電極2之邊緣部設置有絕緣 膜5 ’從而將鄰接之第1電極2彼此電性分離β第2電極4&係 用以自第1電極2汲取電之汲取電極。於使用排列配置之複 數個發光元件之位於最外側之發光元件之第1電極2作為沒 取電極之情形時，可將第2電極4a省略。 基板1設為透光性基板。使用例如3〇〇 mmX300 mmX厚度 0.7 mm之玻璃基板等。 第1電極2設為具有導電性之透明膜。可使用例如氧化銦 錫（ITO)、氧化錫（Sn〇2)、氧化鋅（ZnO)等之金屬氧化膜。 第1電極2之厚度設為1〇〇 nm至500 nm左右。 有機發光層3設為包含有機發光材料之有機多層膜。例 如’有機多層膜之構成設為電洞注入層/電洞傳輸層/發光 層/電子傳輸層/電子注入層等。有機發光層3之總厚度設為 100 nm 至 300 nm 左右。 第2電極4包含下部第2電極及上部第2電極。下部第2電 極及上部第2電極皆包含具有導電性之膜。例如，下部第2 電極及上部第2電極設為鋁（A1)或銀（Ag)等之金屬膜。第2 156288.doc •10- 201230427 電極4之厚度設為10 nm以上且5〇〇 nm以下。下部第2電極 及上部第2電極可包含相同之導電性材料，亦可包含不同 之導電性材料。 下部第2電極僅積層於有機發光層上。藉此發光元件中 所包含之下部第2電極作為使電荷注人i個發光元件内之電 極而發揮作用。下部第2電極之厚度較佳為！ nm以上且5〇 nm以下之範圍。上述範圍係考慮到於下部第2電極與有機 發光層之間確實地形成界面、及利用雷射加工之除去性。 又，下部第2電極之材質亦可為鐘（Li)或鎂（Mg)等驗性系金 屬或與其他氧化物之混合或者積層。 上部第2電極以覆蓋下部第2電極之方式積層於下部第2 電極上》上部第2電極具有接觸於第丨電極2而配置之部 分。藉此除作為使丨個發光元件内通電之電極發揮作用以 外，亦作為使鄰接之發光元件彼此電性串聯連接之電極而 發揮作用。 絕緣膜5設為電性絕緣之膜。可使用例如正型阻劑、負 型阻劑、或其他固化型樹脂等。絕緣膜5之厚度可為工⑻ ηιη至10 μηι之範圍。就絕緣膜5之寬度而言，於顯示器之 情形時要求為非常狹窄之寬度，而於1〇〇 mm見方尺寸以上 之有機EL照明中並不需要狹窄之寬度，且亦未對精度作出 要求’因此較佳為0·05 mm至2 mm。 其次’對本實施形態之有機EL元件之製造方法進行說 明。圖2係表示對本實施形態之有機el元件之製造方法之 例進行說明之剖面圖。 I56288.doc 201230427 (1) 圖 2(a) 使第1電極2於基板丨上圖案化β (2) 圖 2(b) 清洗形成有第1電極2之基板1之表面。其後於形成有第^ 電極2之基板1上之特定部分塗佈絕緣材料並使之固化。特 疋部分係分割而形成之第1電極彼此相對向之邊緣部及其 附近。又，特定部分除上述邊緣部及其附近以外，亦可包 含自邊緣部起隔開固定距離且位於第1電極2之面方向内側 之第1電極2上之一部分。 絕緣材料係以非接觸方式進行塗佈。作為以非接觸方式 塗佈絕緣膜5之方法，點狀喷出型之分注器最為合適。作 為..狀噴出型之分注器，可使用例如八”如化公司製造之 ASTER(登錄商標）2等。對1個發光元件係利用單一 之喷嘴6進行絕緣材料之塗佈。喷嘴6之喷出口之大小等可 根據所使用之絕緣材料之種類或作為對象之發光元件之大 小而適當設定。 於使用點狀噴出型之分注器之情形時，首先，以使單一 喷嘴6之前端朝向形成有第1電極2之基板1上，且使前端不 =第1電極2接觸之方式與形成有第丨電極2之基板丨隔開間 隔而配置單-喷嘴6。例如’相對於第1電極2之邊緣部(圖 案化階差部分)而自第1電極2之表面起隔開(M mm至1.0 mm之間隔配置單一噴嘴6。 其-人，自單一噴嘴6向形成有第1電極2之基板1上之特定 部分斷續性地喷出絕緣材料 又’一面喷出絕緣材料，一 156288.doc •12· 201230427 面使基板1或單—噴嘴6相對性地移動而於特;t部分形成連 續之線性之絕緣膜5。絕緣材料之喷出量、及基心或單一 喷嘴6之移動速度等料慮到塗佈對象表面之濕潤性、絕 緣材料之種類及黏度’且以使絕緣膜5成為所需之厚度及 寬度之方式適當設定。 & 例如’於喷出量5 nL、噴出粒直徑約〇2 _、重複喷出 速度設為 dQt/see、且移動速度設為100 mm/sec之條件 下’喷出粒子以0.5 mm間时佈於基板上。所塗佈之絕緣 材料噴附於基材上之後形成厚度5㈣、寬度2()職之絕緣 膜5。於1〇〇 111„1見方以上之照明用有機£]1元件中可充分容 許有該寬度，可藉由改變喷出量及間隔而容易地改變寬 度。 塗佈之絕緣材料之固化方法可根據所使用之絕緣材料而 適當選擇。絕緣材料較佳為有機材料，於使用正型阻劑作 為’、、邑緣材料之情形時，於塗佈後僅進行加熱（後烘烤）便可 使其固化。因絕緣材料僅塗佈於特定部分，故而不需要先 刖之利用光微影法形成絕緣膜時所必需之預烘烤、曝光及 顯影之步驟。因此’與先前絕緣膜之形成中所使用之光微 影法相比，不僅可減少絕緣材料之使用量，而且可僅使用 先前之烘烤爐而不需要新的設備。 (3)圖2(c):有機發光層形成步驟及下部第2電極形成步驟 將上述中至形成有絕緣膜5之基板1搬入至真空蒸鍍裝置 内°於貫際之真空蒸鍍室内，基板之成膜面朝向下方，但 為易於理解說明而揭示為朝向上方。 156288.doc -13- 201230427 於基板1上配置具有開口部之有機用蒸鍍遮罩7，積層蒸 鍍有機材料而形成有機發光層3。例如，於以120 nm之厚 度形成ITO作為第1電極之基板丨上，以12〇 nm之厚度積層 蒸鍍電洞注入層/電洞傳輸層/發光層/電子傳輸層/電子注 入層作為有機發光層3 4機材料之其他諸條件並無限 制。 形成有機發光層3之後，以使開口部與有機發光層3重疊 之方式於基板1上配置有機用蒸鍍遮罩7，將導電性材料積 層蒸鍍於有機發光層3上而形成下部第2電極4b。形成下部 第2電極4b之步驟較佳為與形成有機發光層3之步驟連續地 實施。 (4)圖2(d):第1分割槽形成步驟 形成下部第2電極4b之後，自積層於第i電極2上之有機 發光層3/下部第2電極4b之下部第2電極4b側照射雷射光束 9 ’除去有機發光層3/下部第2電極4b之一部分而形成第1 分割槽8。雷射加工條件可根據有機發光層3及下部第2電 極4b之材質或厚度專而適當設定。例如，以1 〇 nm之厚度 積層蒸鍵铭作為下部第2電極4b。雷射係使用飛秒雷射， 於波長810 nm、脈寬150 fs、雷射輸出1〇〇 mj/cm2、重複 頻率200 kHz、雷射光束直徑20 μηι之條件下進行加工。第 1分割槽8沿分割形成於基板丨上之第1電極2之分割面（邊緣 部）方向而形成於第1電極2之端部即可。又，於自上述邊 緣部起隔開固定距離且位於較上述邊緣部靠第1電極2内側 之第1電極上設置有絕緣膜5之情形時，第1分割槽8與絕緣 156288.doc •14· 201230427 膜相鄰接而形成於設置於上述第丨電極2上之絕緣膜5與上 述邊緣部之間即可。 (5) 圖2(e):上部第2電極形成步驟 形成第1分割槽8之後，將基板1搬入至其他真空蒸鍍裝 置。於基板1上（形成有下部第2電極4b之側）配置具有開口 部之第2電極用蒸鍍遮罩1〇，積層蒸鍍導電性材料而形成 上部第2電極4c。第2電極蒸鍍遮罩10係以開口部與之前形 成之第1電極2、有機發光層3及下部第2電極仆重疊之方式 進行配置。又，上部第2電極係形成為填埋第丨分割槽。例 如，以90 nm之厚度蒸鍍鋁作為上部第2電極4c。導電性材 料之其他蒸鍍條件並無限制。 (6) 圖2(f):第2分割槽形成步驟 形成上部第2電極4c之後，於積層於第！電極2上之有機 發光層3/下部第2電極4b/上部第2電極4c上，自上部第2電 極4c側照射雷射光束9，藉由雷射加工除去有機發光層 下4第2電極4b/上部第2電極4c之一部分而形成第2分割槽 11。雷射加工條件可根據有機發光層3、下部第2電極扑及 上部第2電極4c之材質或厚度等而適當設定。例如，雷射 係與上述同樣地使用飛秒雷射’於波長〗〇45 nm、脈寬 fS雷射輸出200 mJ/cm2、重複頻率200 kHz、雷射光束直 徑20 μΐΏ之條件下進行加工。第2分割槽丨丨以於與相同地形 成於第1電極2上之第i分割槽8之間不存在發光元件之方式 形成。例如，於較第1分割槽8更靠第i電極2之面方向内 侧，以與第1分割槽8相鄰接之方式形成第2分割槽U。 I56288.doc •15· 201230427 又，於自上述邊緣部起隔開固定距離而位於内側之第艾電 極2上設置有絕緣膜5之情形時’於設置於上述第丨電極2上 之絕緣膜上以第2分割槽u之底面成為絕緣膜5之方式形成 第2分割槽11。該情形時，第2分割槽〗丨可不與第丨分割槽8 接觸。於第2分割槽形成步驟之後適當地形成密封構件（未 圖示）。 再者，本實施樣態中藉由真空蒸鍍而使第2電極4成膜， 但並不限定於此，亦可藉由濺鍍法而形成膜。 其次對雷射加工方法進行說明。 用以形成第1分割槽8及第2分割槽u之雷射加工可於真 二或隋丨生氣體環i兄中貫施。例如，雷射加工於内部形成真 空或惰性氣體環境之容器内實施即可。本實施形態中於形 成惰性氣體環境之容器内進行雷射加工。圖3係表示本實 施形態之雷射加工之構成圖。 谷器20包含氣體導入口 21、雷射光束導入窗22及驅動平 台（未圖不）。驅動平台可保持被加工對象物23，且亦可沿 水平方向（箭頭X及箭頭γ方向）移動。 谷益20較佳為於雷射光束導入窗22之容器内側具有包圍 雷射光束路徑之筒狀構件24。筒狀構件24於雷射光束9之 出口側附近連接有與筒狀構件24之内部連通之抽吸路徑 25。抽吸路徑25之另一端部配置於容器2〇外。 將貫施過雷射加工之被加工對象物23搬入至容器2〇内， 使被加工面朝向雷射光束導入窗22載置並保持於驅動平 台。其後’自氣體導入口 21向容器2〇内導入水分濃度較低 156288.doc 201230427 之高純度之惰性氣體，使容器20内充滿惰性氣體。惰性氣 體適用氮氣或氬氣。惰性氣體之純度較佳為99.99%以上， *隋性氣體之水分殘留濃度較佳為1 ppm以下。 繼而，經由抽吸路徑25進行抽吸，將雷射光束之出口附 近之氣體排出至容器20外。於進行抽吸時，自氣體導入口 21導入高純度之惰性氣體而將容器2〇内之壓力保持於固 定。經由雷射光束導入窗22對被加工對象物23照射雷射光 束9。使驅動平台適當地水平移動，從而於特定部分形成 分割槽。 若對有機發光層3或第2電極4(下部第2電極及上部第2電 極）照射雷射光束9，則該等中所含有之物質會因熱而蒸 發、及因剝蝕而分解並氣化，從而擴散消失。 根據本實施形態，一面對容器2〇内進行排氣一面向容器 二内導入惰性氣體，藉此可將容請内之壓力保持於固 疋’並且將藉由雷射加工而除去之物質排出至容器外， 由此可抑制除去之物質污染有機發光層3。因而可使發光 特性穩定化。 又，形成第2分割槽11之步驟之雷射加工中，亦可將氧 =合入惰性氣體中並導人至容器2G内。氧濃度較佳_ 體積％以上且20體積％以下(大氣中之氧分壓以下 藉由雷射加工而除去之物暂 “ m 含有並非完全域體之 物質。因此，並非穿；兔名Μ “全為讀而蒸發之物質有可能會飛散 至經雷射照射之加邱 被/ 切著於此。該物質通常 被稱作碎屑，其會導致 门遠。卩文到 >可染。若將氧混合 156288.doc 17 201230427 入惰：氣體中並導入至容器内，則並非完全為氣體之物質 有之來自第2電極之金屬微粒子可氧化而形成絕緣 匕即便於因雷射加工而飛散之物質再次附著於雷 射加工端面或已完成加工部位之情形時，亦可防止漏電流 之產生°上述混合氧之方法於使用紹作為第2電極之情形 尤為有效。 【圖式簡單說明】 圖1係以本發明之一實施樣態之有機EL元件製造方法製 造之有機EL元件之概略平面圖。 、圖2(a)·⑴係說明本發明之-實施樣態之有機EL元件製 造方法之一例之概略剖面圖。 圖3係本發明之—實施樣態之雷射加卫之構成圖。 圖4係表示先前之有機EL元件之構成之概略剖面圖。 【主要元件符號說明】 1 基板 2 第1電極 3 有機發光層 4 第2電極 4a 第2電極（汲取用電極） 4b 下部第2電極 4c 上部第2電極 5 絕緣膜 6 喷嘴 7 有機用蒸鍍遮罩 156288.doc 201230427 8 第1分割槽 9 雷射光束 10 第2電極用蒸鍍遮罩 11 第2分割槽 20 容器 21 氣體導入口 22 雷射光束導入窗 23 被加工對象物 24 筒狀構件 25 抽吸路徑 X、Y 箭頭 156288.doc 19-201230427 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a method of manufacturing a large-area organic EL element suitable for illumination. [Prior Art] The organic light-emitting element emits light by applying a voltage between the first electrode and the second electrode to cause the organic light-emitting layer interposed between the first electrode and the second electrode to emit light. An organic EL (electr luminescence) device as an organic light-emitting element has been applied to a flat panel display represented by a liquid crystal display. A flat panel display has a larger number of pixels, so a single pixel is finer. The pixels of the display using the organic EL element are also finely divided, and the organic EL element is patterned by a fine vapor deposition mask. Further, in recent years, organic EL elements have been applied to solid-state illumination. Solid-state lighting is a product that requires higher brightness than displays. For example, the brightness required by the display is about 1,000 cd/m2, and the required shell size in solid-state illumination is about 3,000 cd/m2 to 5,000 cd/m2. Therefore, it is necessary to make a large current value per unit area flow through the respective electrodes. In a display using an organic EL element, the size of one light-emitting element is less than 1 mm square. On the other hand, solid-state illumination using an organic EL element requires a larger beam than the display, and therefore requires one light-emitting element to be larger than 1 见 square. In the organic EL device, it is necessary to use either a first electrode or a second electrode as a transparent conductive film to emit light. Usually, the first electrode is a transparent conductive film. Indium tin oxide (ITO) is used as the material of the transparent conductive film. 156288.doc 201230427 Material "ITO is a material of a transparent conductive film. The resistivity is significantly higher. If the organic EL containing the transparent conductive film is opened, the Ltc device is formed only over a large area and a large current flows, which causes a phenomenon in which the peripheral portion of the device is more cumbersome and the central portion is darker (bright spot). . This phenomenon is caused by the high resistance value of the monthly conductive 臈 at the transparent Φ and the voltage drop due to the large current. In order to reduce the (four) drop and make the brightness uniform, the film thickness of the transparent conductive film is increased to about 100 nm to 500 nm, and the sheet resistance value can be lowered. This can suppress bright spots. However, the material of the transparent conductive film is expensive, and if the transparent conductive film is made thick, the problem of high material cost arises. Therefore, the following method is studied, that is, the light-emitting element is divided into smaller light-emitting elements inside the larger component panel, and the components of the knife J are connected in series, thereby reducing the current flowing through the electrodes (refer to the patent) Document 1 to Patent Document 7). Thereby, the voltage of the entire panel can be increased, so that the resistance of the transparent conductive film can be reduced to reduce the voltage drop. This makes it possible to use a larger illuminating panel and also reduce the distribution of the brightness inside. Patent Document 1 to Patent Document 7 disclose a method of forming a plurality of light-emitting elements by patterning processing by photolithography, and forming a separation groove in each layer of the light-emitting element by laser processing and forming a plurality of A method of illuminating an element. [Prior Art Document] [Patent Document 1] Japanese Patent Laid-Open Publication No. 2000-29404 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2008-227326 No. 156288.doc 201230427 [Patent Document 3] [Patent Document 4] Japanese Patent Laid-Open Publication No. JP-A No. Hei. No. Hei. No. Hei. No. 5/3/76 (Patent Document 5). Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. Further, an organic EL element having a light-emitting element is formed. Fig. 4 is a schematic cross-sectional view showing the configuration of a conventional organic EL element. In Fig. 4, the light-emitting elements including the second electrode 2/organic light-emitting layer 3/second electrode 4 are arranged on the substrate, and the respective working electrodes 2 of the adjacent light-emitting elements are electrically separated by the insulating film 5. Further, the adjacent light-emitting elements bring the first electrode 2 of one of the light-emitting elements into contact with the second electrode 4 of the other of the light-emitting elements, thereby forming an organic EL element connected in series. In Patent Document 1, the first electrode is formed on the substrate by patterning by photolithography. An organic light-emitting layer was formed by vacuum evaporation using a vapor deposition mask having an opening on the second electrode formed on the substrate. On the organic light-emitting layer, a second electrode was formed by vacuum evaporation using another vapor deposition mask having an opening. Since the end portion of the second electrode formed by the patterning process has a steep cross section, a step is generated between the substrate and the substrate. When the organic light-emitting layer is laminated on the step portion around the patterning, the organic light-emitting layer which is overlapped with the step portion is thinned and is liable to cause defects. Therefore, leakage current or problems are easily generated. Looking for 156288.doc 201230427 In order to prevent the above problem, an insulating film is formed by photolithography on the step portion of the patterning off. In the patent ship, the photoresist is coated on the entire surface of the patterned substrate and the photoresist is dried. Thereafter, the pattern mask to be processed is exposed to the ultraviolet ray, and the high-precision insulating film is patterned by prebaking, engraving, cleaning, and post-baking. Photolithography is a high-precision processing technique commonly used in semiconductor or flat panel displays, but requires large-scale and expensive manufacturing equipment. In addition, the cost of the consumables, the button engraving and the consumables of the cleaning fluid and the high operating costs for the waste treatment are also required. : Vacuum evaporation by vapor deposition mask can be directly patterned on the substrate. However, if it is a large substrate, the precision of a high-definition vapor mask cannot be maintained, and thus it is not suitable as a method for inexpensively manufacturing a large substrate such as illumination. Soil Patent Document 5 to Patent Document 7 disclose an organic EL element in which a plurality of light-emitting elements are connected in series by laser processing. The organic light-emitting layer of the organic EL element is usually an organic multilayer film in which a hole injection layer/hole transport layer/light-emitting layer/electron transport layer/electron injection layer is laminated. The hole-transporting material is contained on the i-th electrode side of the organic light-emitting layer, and the electron-transporting material having the opposite property to the hole-transporting material is contained on the second electrode side. The organic EL device is formed by continuous film formation of the i-th electrode/hole injection layer/hole transport layer/light-emitting layer/electron transport layer/electron injection layer/second electrode. In particular, the interface between the (four) hole injection layer and the interface between the electron injection layer and the second electrode is very sensitive to the surface state and the environment, and the state of the interface has a great influence on the device characteristics. 156288.doc • 6 · 201230427 If the organic light-emitting layer is irradiated with a laser in a vacuum or inert atmosphere, the organic light-emitting layer can be removed by gasification caused by thermal evaporation or ablation. At this time, the microparticle scattering of the hole transporting material containing the evaporated or vaporized organic light-emitting layer adheres to the electrons on the surface of the organic light-emitting layer at the molecular level; The luminescent properties of the organic anal element are lowered by the attachment of materials having different properties. The present invention has been made in view of the above problems, and an object of the invention is to provide a method for producing an organic EL device which is processed by laser processing without using a light lithography method of mussels to produce a stable luminescent property. Organic EL element for lighting. [Means for Solving the Problems] In order to solve the above problems, the present invention provides a method for producing an organic EL device, which is characterized in that a plurality of light-emitting elements including a second electrode, an organic light-emitting layer, and a second electrode are formed on a substrate and adjacent to each other. A method of electrically connecting an organic EL element in which light-emitting elements are electrically connected in series, and comprising: step (A), forming the organic light-emitting layer on a substrate on which the first electrode is formed; and step (B) 'in the step (A) After that, the second electrode having a specific thickness lower portion is formed only on the organic light-emitting layer; and (c), after the step (B), the organic light-emitting layer laminated on the first electrode is removed by laser processing/ a portion of the lower second electrode is formed to form a first dividing groove that divides the organic light emitting layer/lower second electrode into a plurality of organic light emitting layers/lower second electrodes; and step (D), after the step (after Forming an upper second electrode in a manner of filling the first dividing groove and covering the plurality of organic light emitting layers/lower second electrodes; and, after the step, removing 1562 by laser processing 88.doc 201230427 The organic light-emitting layer/lower second electrode/one of the upper second electrode is laminated on the first electrode, and the organic light-emitting layer/lower second electrode/upper second electrode is divided into a plurality of According to the above invention, when the organic light-emitting layer is separated by laser processing, the upper surface of the organic light-emitting layer is covered by the lower second electrode, and therefore the upper surface of the organic light-emitting layer is covered by the second electrode. The organic light-emitting layer removed by the laser processing can be prevented from scattering and adhering to the organic light-emitting layer, whereby the light-emitting characteristics of the organic EL element can be stabilized. In one aspect of the invention, the above steps are preferred. In (B), the specific thickness of the lower second electrode is 1 nm or more and 100 nm or less. With the above configuration, the interface between the organic light-emitting layer and the lower electrode can be reliably formed, and laser processing can be performed. The organic light-emitting layer and the lower second electrode are removed together. In one aspect of the invention, it is preferable to evacuate the inside of the container while the inside is a vacuum or inert gas. By performing the above step (C), the substance removed by the laser processing can be discharged to the outside of the container, thereby suppressing contamination of the organic light-emitting layer. In the aspect of the invention, it is preferred to be vacuum inside or In the container of the inert gas atmosphere, the above step (E) is performed while exhausting the inside of the container. Thereby, the substance removed by the laser processing can be discharged to the outside of the container because the crucible (4) and the upper second electrode are attached to the thunder. In the aspect of the invention, it is preferable that the second electrode contains a conductive stabilizing metal, and the above-mentioned second electrode includes a cross section of the organic light emitting layer of the processing portion. 156288.doc 201230427 In the step (Ε), the above laser processing is performed in an environment where oxygen is mixed in a vacuum or an inert gas atmosphere. The laser is processed in an oxygen-containing environment, whereby the metal particles of the second electrode and the upper second electrode of the lower portion of the laser are scattered to form an insulator. Thereby, even when the metal fine particles of the second electrode and the upper second electrode are attached to the side surface of the organic light-emitting layer or the like, the occurrence of leakage current or short-circuit can be prevented. In one aspect of the invention, it is preferable that a cylindrical member surrounds a passage path of the laser beam, and a suction path is connected to the exit side of the laser beam of the tubular member, and one side is suctioned through the suction path. Perform laser processing. The vicinity of the exit of the laser beam is sucked in the vicinity of the laser irradiation position, so that the organic light-emitting layer or the second electrode (the lower second electrode and the upper second electrode) removed by the laser processing can be reduced and scattered. It is attached to the pollution near the processing unit again. Thereby, leakage current or short circuit can be suppressed. [Effects of the Invention] According to the present invention, after the second electrode having a thinner lower portion is formed on the organic light-emitting layer, the organic light-emitting layer is separated by laser processing, whereby the material having different characteristics can be prevented from adhering to the organic light-emitting layer. Therefore, the method for manufacturing an organic rainbow element is provided, which does not require the use of an expensive photolithography method, and a method for producing an organic rainbow element suitable for illumination having stable light-emitting characteristics is obtained. An embodiment of the method for producing an organic rainbow element of the present invention will be described with reference to the drawings. Fig. 1 is a schematic plan view showing an organic EL device manufactured by the production method of the present embodiment. An organic EL device manufactured by the method for producing an organic EL device of the present embodiment includes a light-emitting device in which a first electrode 2, an organic light-emitting layer 3, and a second electrode 4 are sequentially laminated on a substrate 1. The plurality of light-emitting elements are arranged on the substrate. The upper adjacent light-emitting elements are electrically connected in series by bringing the first electrode of one of the light-emitting elements into contact with the second electrode of the other of the light-emitting elements. An insulating film 5' is provided at an edge portion of the first electrode 2 of each of the light-emitting elements to electrically separate the adjacent first electrodes 2 from each other. The second electrode 4& is an electrode for extracting electricity from the first electrode 2. When the first electrode 2 of the light-emitting element located at the outermost side of the plurality of light-emitting elements arranged in a line is used as the electrode is not taken, the second electrode 4a can be omitted. The substrate 1 is a light-transmitting substrate. For example, a glass substrate of 3 mm mm×300 mmX and a thickness of 0.7 mm is used. The first electrode 2 is made of a conductive transparent film. A metal oxide film such as indium tin oxide (ITO), tin oxide (Sn〇2), zinc oxide (ZnO) or the like can be used. The thickness of the first electrode 2 is set to be about 1 〇〇 nm to 500 nm. The organic light-emitting layer 3 is an organic multilayer film containing an organic light-emitting material. For example, the composition of the organic multilayer film is set as a hole injection layer/hole transport layer/light-emitting layer/electron transport layer/electron injection layer. The total thickness of the organic light-emitting layer 3 is set to be about 100 nm to 300 nm. The second electrode 4 includes a lower second electrode and an upper second electrode. Both the lower second electrode and the upper second electrode include a conductive film. For example, the lower second electrode and the upper second electrode are metal films such as aluminum (A1) or silver (Ag). 2 156288.doc •10- 201230427 The thickness of the electrode 4 is set to be 10 nm or more and 5 〇〇 nm or less. The lower second electrode and the upper second electrode may comprise the same conductive material or may comprise different conductive materials. The lower second electrode is only laminated on the organic light-emitting layer. Thereby, the second electrode included in the lower portion of the light-emitting element functions as an electrode for injecting electric charges into the one of the light-emitting elements. The thickness of the lower second electrode is preferably! Above nm and below 5 〇 nm. The above range is considered in that the interface between the lower second electrode and the organic light-emitting layer is surely formed and the removal property by laser processing. Further, the material of the lower second electrode may be an alloy of a test such as a clock (Li) or magnesium (Mg) or a mixture or layer with another oxide. The upper second electrode is laminated on the lower second electrode so as to cover the lower second electrode. The upper second electrode has a portion that is placed in contact with the second electrode 2. In addition, it functions as an electrode for electrically connecting the light-emitting elements, and also functions as an electrode for electrically connecting adjacent light-emitting elements in series. The insulating film 5 is made of an electrically insulating film. For example, a positive resist, a negative resist, or other curable resin can be used. The thickness of the insulating film 5 may range from (8) ηιη to 10 μηι. As for the width of the insulating film 5, a very narrow width is required in the case of a display, and a narrow width is not required in an organic EL illumination of a size of 1 mm or more, and accuracy is not required. Therefore, it is preferably from 0.05 mm to 2 mm. Next, a method of manufacturing the organic EL device of the present embodiment will be described. Fig. 2 is a cross-sectional view showing an example of a method of manufacturing the organic EL element of the embodiment. I56288.doc 201230427 (1) Fig. 2(a) Patterning the first electrode 2 on the substrate β (2) Fig. 2(b) Cleaning the surface of the substrate 1 on which the first electrode 2 is formed. Thereafter, an insulating material is applied to a specific portion of the substrate 1 on which the second electrode 2 is formed and cured. The special portion is formed by dividing the first electrode to face the edge portion and the vicinity thereof. Further, the specific portion may include a portion of the first electrode 2 located on the inner side in the surface direction of the first electrode 2 at a fixed distance from the edge portion in addition to the edge portion and the vicinity thereof. The insulating material is applied in a non-contact manner. As a method of applying the insulating film 5 in a non-contact manner, a dot discharge type dispenser is most suitable. For example, ASTER (registered trademark) 2 manufactured by Asahi Co., Ltd., etc. can be used as the dispenser of the discharge type, and the insulating material is applied to one light-emitting element by a single nozzle 6. The size of the discharge port or the like can be appropriately set depending on the type of the insulating material to be used or the size of the light-emitting element to be used. When a dot discharge type dispenser is used, first, the front end of the single nozzle 6 is oriented. The single-nozzle 6 is disposed on the substrate 1 on which the first electrode 2 is formed, and the front end is not in contact with the first electrode 2, and is disposed at a distance from the substrate 形成 on which the second electrode 2 is formed. For example, 'with respect to the first electrode The edge portion of the 2 (patterning step portion) is spaced apart from the surface of the first electrode 2 (the single nozzle 6 is disposed at intervals of M mm to 1.0 mm. The person-to-person, the first electrode 2 is formed from the single nozzle 6 The specific portion on the substrate 1 intermittently ejects the insulating material and ejects the insulating material on one side, and the surface of the substrate 1 or the single-nozzle 6 is relatively moved while the surface is 156288.doc •12·201230427; Forming a continuous linear insulating film 5. Insulating material The amount of discharge, the moving speed of the base or the single nozzle 6, and the like, the wettability of the surface to be coated, the type and viscosity of the insulating material, and the thickness and width of the insulating film 5 are appropriately set. & For example, 'with a discharge amount of 5 nL, a sprayed particle diameter of about 〇2 _, a repeated discharge speed of dQt/see, and a moving speed of 100 mm/sec, the sprayed particles are 0.5 mm apart. When the coated insulating material is sprayed on the substrate, the insulating film 5 having a thickness of 5 (four) and a width of 2 () is formed. The organic material for illumination of 1 〇〇 111 „1 square is more than 1] The width can be sufficiently tolerated, and the width can be easily changed by changing the discharge amount and the interval. The curing method of the applied insulating material can be appropriately selected depending on the insulating material to be used. The insulating material is preferably an organic material. When a positive type resist is used as the ', or the edge material, it can be cured only by heating (post-baking) after coating. Since the insulating material is applied only to a specific part, it is not necessary to first apply. Forming an insulating film by photolithography The necessary pre-baking, exposing and developing steps. Therefore, compared with the photolithography method used in the formation of the previous insulating film, not only the amount of the insulating material used but also the previous baking furnace can be used. (3) FIG. 2(c): organic light-emitting layer forming step and lower second electrode forming step, the substrate 1 having the insulating film 5 formed therein is carried into the vacuum vapor deposition apparatus. In the vacuum deposition chamber, the film formation surface of the substrate faces downward, but is disclosed as being upwards for easy understanding. 156288.doc -13- 201230427 An organic vapor deposition mask 7 having an opening is disposed on the substrate 1, and the layer is laminated. The organic light-emitting layer 3 is formed by vapor-depositing an organic material. For example, on a substrate on which ITO is formed as a first electrode with a thickness of 120 nm, a vapor deposition hole injection layer/hole transport layer/light emitting layer/electron transport layer/electron injection layer is organically deposited at a thickness of 12 nm. The other conditions of the material of the light-emitting layer are not limited. After the organic light-emitting layer 3 is formed, the organic vapor deposition mask 7 is placed on the substrate 1 so that the opening portion overlaps the organic light-emitting layer 3, and the conductive material layer is deposited on the organic light-emitting layer 3 to form the lower portion. Electrode 4b. The step of forming the lower second electrode 4b is preferably carried out continuously with the step of forming the organic light-emitting layer 3. (4) FIG. 2(d): After forming the lower second electrode 4b in the first dividing groove forming step, the second electrode 4b is irradiated from the lower side of the organic light-emitting layer 3/lower second electrode 4b on the i-th electrode 2 The laser beam 9' removes one of the organic light-emitting layer 3/lower second electrode 4b to form the first dividing groove 8. The laser processing conditions can be appropriately set depending on the material or thickness of the organic light-emitting layer 3 and the lower second electrode 4b. For example, the vapor layer is laminated as the lower second electrode 4b at a thickness of 1 〇 nm. The laser system uses a femtosecond laser to process at a wavelength of 810 nm, a pulse width of 150 fs, a laser output of 1 〇〇 mj/cm2, a repetition rate of 200 kHz, and a laser beam diameter of 20 μηι. The first dividing groove 8 may be formed at the end of the first electrode 2 in the direction of the dividing surface (edge portion) of the first electrode 2 formed on the substrate stack. Further, when the insulating film 5 is provided on the first electrode which is spaced apart from the edge portion by the edge portion and is located inside the first electrode 2 from the edge portion, the first dividing groove 8 and the insulating 156288.doc • 14 · 201230427 The film may be adjacent to each other and formed between the insulating film 5 provided on the second electrode 2 and the edge portion. (5) Fig. 2(e): Upper second electrode forming step After the first dividing groove 8 is formed, the substrate 1 is carried into another vacuum vapor deposition apparatus. On the substrate 1 (the side on which the lower second electrode 4b is formed), the second electrode vapor deposition mask 1B having the opening portion is placed, and the conductive material is deposited by vapor deposition to form the upper second electrode 4c. The second electrode vapor deposition mask 10 is disposed such that the opening portion overlaps the previously formed first electrode 2, the organic light-emitting layer 3, and the lower second electrode. Further, the upper second electrode is formed as a buried second dividing groove. For example, aluminum is vapor-deposited at a thickness of 90 nm as the upper second electrode 4c. The other evaporation conditions of the conductive material are not limited. (6) Fig. 2(f): Second dividing groove forming step After forming the upper second electrode 4c, it is laminated on the first! On the organic light-emitting layer 3/lower second electrode 4b/upper second electrode 4c on the electrode 2, the laser beam 9 is irradiated from the upper second electrode 4c side, and the organic light-emitting layer lower 4 second electrode 4b is removed by laser processing. The second dividing groove 11 is formed in one part of the upper second electrode 4c. The laser processing conditions can be appropriately set depending on the material or thickness of the organic light-emitting layer 3, the lower second electrode, and the upper second electrode 4c. For example, the laser system is processed in the same manner as described above using a femtosecond laser at a wavelength of 〇45 nm, a pulse width fS laser output of 200 mJ/cm2, a repetition frequency of 200 kHz, and a laser beam diameter of 20 μΐΏ. The second dividing groove is formed so as not to have a light-emitting element between the i-th dividing grooves 8 formed on the first electrode 2 in the same manner. For example, the second dividing groove U is formed adjacent to the first dividing groove 8 in the inner side in the surface direction of the i-th electrode 2 from the first dividing groove 8. I56288.doc •15·201230427 Further, when the insulating film 5 is provided on the inner electrode 2 which is located at a fixed distance from the edge portion, the insulating film 5 is disposed on the insulating film provided on the second electrode 2 The second dividing groove 11 is formed so that the bottom surface of the second dividing groove u becomes the insulating film 5. In this case, the second dividing groove 不 does not come into contact with the second dividing groove 8. A sealing member (not shown) is appropriately formed after the second dividing groove forming step. Further, in the present embodiment, the second electrode 4 is formed by vacuum deposition, but the present invention is not limited thereto, and a film may be formed by a sputtering method. Next, the laser processing method will be described. The laser processing for forming the first dividing groove 8 and the second dividing groove u can be performed in the true two or the twin gas ring. For example, laser processing can be carried out in a container that internally forms a vacuum or inert gas atmosphere. In the present embodiment, laser processing is performed in a container that forms an inert gas atmosphere. Fig. 3 is a view showing the configuration of the laser processing of the embodiment. The barn 20 includes a gas introduction port 21, a laser beam introduction window 22, and a drive platform (not shown). The drive platform can hold the object 23 to be processed, and can also move in the horizontal direction (arrow X and arrow γ direction). Preferably, the valley 20 has a cylindrical member 24 surrounding the laser beam path inside the container of the laser beam introduction window 22. The cylindrical member 24 is connected to a suction path 25 communicating with the inside of the cylindrical member 24 near the exit side of the laser beam 9. The other end of the suction path 25 is disposed outside the container 2 . The object 23 to be processed subjected to the laser processing is carried into the container 2, and the surface to be processed is placed on the laser beam introduction window 22 and held on the driving platform. Thereafter, a high-purity inert gas having a low water concentration of 156288.doc 201230427 is introduced into the container 2 from the gas introduction port 21, and the container 20 is filled with an inert gas. The inert gas is suitable for nitrogen or argon. The purity of the inert gas is preferably 99.99% or more, and the moisture residual concentration of the inert gas is preferably 1 ppm or less. Then, suction is performed via the suction path 25, and the gas near the exit of the laser beam is discharged to the outside of the container 20. At the time of suction, a high-purity inert gas is introduced from the gas introduction port 21 to maintain the pressure in the vessel 2 crucible. The object to be processed 23 is irradiated with the laser beam 9 via the laser beam introducing window 22. The drive platform is appropriately moved horizontally to form a dividing groove in a specific portion. When the organic light-emitting layer 3 or the second electrode 4 (the lower second electrode and the upper second electrode) is irradiated with the laser beam 9, the substances contained in the particles are evaporated by heat and decomposed and vaporized by the ablation. And thus the diffusion disappears. According to the present embodiment, an inert gas is introduced into the container 2 facing the exhaust gas in the container 2, whereby the pressure in the container can be maintained at the solid state and the substance removed by the laser processing can be discharged. Outside the container, it is possible to suppress the substance removed from contaminating the organic light-emitting layer 3. Therefore, the luminescent characteristics can be stabilized. Further, in the laser processing in which the second dividing groove 11 is formed, oxygen can be incorporated into the inert gas and introduced into the container 2G. The oxygen concentration is preferably _ vol% or more and 20 vol% or less (substances which are removed by laser processing at a partial pressure of oxygen in the atmosphere temporarily "m contains a substance which is not completely domain-shaped. Therefore, it is not worn; rabbit name" Substances that are all evaporating for reading may scatter to the exposed and irradiated by the laser. This substance is often called debris, which can cause the door to be far away. When oxygen is mixed into 156288.doc 17 201230427 into the inert gas: gas and introduced into the container, the metal particles from the second electrode can be oxidized to form an insulating material, even if it is scattered by laser processing. When the substance is attached to the laser processing end face or the finished processing part, the leakage current can also be prevented. The above method of mixing oxygen is particularly effective when used as the second electrode. [Simplified illustration] Fig. 1 A schematic plan view of an organic EL device manufactured by the method for producing an organic EL device according to an embodiment of the present invention. FIG. 2(a) and (1) are views showing a method of manufacturing an organic EL device according to an embodiment of the present invention. Fig. 3 is a schematic cross-sectional view showing the configuration of a laser beam in the embodiment of the present invention. Fig. 4 is a schematic cross-sectional view showing the configuration of a conventional organic EL element. [Description of main components] 1 Substrate 2 1 electrode 3 Organic light-emitting layer 4 Second electrode 4a Second electrode (draw electrode) 4b Lower second electrode 4c Upper second electrode 5 Insulating film 6 Nozzle 7 Organic vapor deposition mask 156288.doc 201230427 8 First dividing groove 9 Laser beam 10 Second electrode vapor deposition mask 11 Second dividing groove 20 Container 21 Gas introduction port 22 Laser beam introduction window 23 Object to be processed 24 Cylindrical member 25 Suction path X, Y Arrow 156288.doc 19-