201230351 六、發明說明： 【發明所屬之技術領域】 本發明係與光伏元件(photovoltaic devices)的製造技術 有關，特別是指一種使用於快速溫度程序之溫度感測系統。 【先前技術】 現今的光伏元件，通常是在一玻璃基板或一彈性金屬 板(flexable metal foil)的上方設置一層鉬層(M〇丨吖沉），而於 該鉬層上進行光吸收層（例如CIGS(銅銦鎵硒)層、as(銅銦 硒)層）的製造，而在光吸收層製造時，必須將溫度提高至 攝氏5〇0度以上，並且以濺鍍、蒸鍍、電錢或喷墨㈣㈣ 的方式使之成形於該鉬層上。 上述光吸收層的製造過程中，對於溫度的提昇方式， 目前較主流的技術為RTP(Rapid Temperature〜㈣)快速 溫度程序(下稱RTP程序），此種技術主要是在紐元件的 上方以熱源對光伏元件的上表面進行加熱。 在加熱的過私中，對於玻璃基板的溫度必須進行準確 的測量’才能夠正確的進行RTP程序。然而，在RTp程序 中對於玻璃基板進行溫度測量，是有其困難的，目前已知 的溫度測量方式，是以熱電輕以及紅外線高溫計(pyrometer) 來進行測量。 使用熱電輕測量溫度的方式，是屬於接觸式的，其主 要，將熱電轉置於待測物(即玻璃基板)表面才能進行溫度 測量。然而，熱電耗置放的位置是受到限制的，其只能置 201230351 於玻璃基板的邊緣而無法置於玻璃基板的中間或製作光吸 收層的區域，否則將會影響到光吸收層的製作。而僅置放 於玻璃基板的邊緣又只能偵測到邊緣的溫度，並不能债測 到玻璃基板的任意區域的溫度，因此所測得的溫度數據並 不元整，RTP程序所控制的溫度即無法正確，進而會影塑 光伏元件的製作品質。因此使用熱電耦的測溫技術並不是 製作光伏元件時最佳的測溫技術。 另外使用紅外線rlj溫計的測溫技術，雖然是屬於非 接觸式的技術’但由於其主要是偵測待測物（即玻璃基板) 所1¾㈣來的紅外線’而在RTP程序中的加熱祕對玻璃 基板所發出之熱源也含有大量的紅外線，因此在偵測玻璃 基板的紅外線時’會大财的受到加熱元件所發出的紅外 線所干擾，使得所測得的溫度數據不準確，同樣的會影響 到光伏7G件的製作品質。因此使用紅外線高溫計的測溫技 術並不是製作光伏元件時最佳_溫技術。 【發明内容】 田本發明之主要目的在於提供—種使用於快速溫度程序 旦感'料統其可提供較習知技術更鱗柄溫度測 置数據。 之之次—目的在於提供—種使⑽料溫度程序 伏元二二製作品質 為了達成前述目的，依據本發明所提供之一種使用於 201230351 快速溫度程序之溫度感測系統，其中該快速溫度 以對-光伏元件中間產品進行加熱程序，該光伏元件中門 產品具有-基板以及塗佈於該基板的上表面且在成形中二 至^層光吸收層’該溫度感測系統包含有：—腔室 部用以置放一該光伏元件中間產品；一承台，用以承接該 光伏元件中間產品；至少一熱源，設於該腔室内的上方， 係=下發出紅外線來對該光伏元件中間產品上的光吸收層 • 進行加熱；以及至少一黑體測溫器，設於該腔室内，且面 對於該光伏元件中間產品的光吸收層，用以偵測該光伏元 件中間產品的光吸收層的黑體輻射，進而得到該光吸收層 的/皿度。藉此可更為準確的測得該光吸收層的表面溫度， 進而提昇製作的品質。 【實施方式】 為了詳細說明本發明之技術特點所在，茲舉以下之較 鲁佳實施例並配合圖式說明如後，其中： 如第一圖至第二圖所示，本發明第一較佳實施例所提 供之一種使用於快逮溫度程序之溫度感測系統1〇，主要由 腔室11、一承台21、一熱源31以及一黑體測溫器41 所組成，其中： 該快速溫度程序係用以對一光伏元件中間產品91進 仃加熱程序，該光伏元件中間產品91於本實施例中係具有 基板92以及塗佈於該基板92上表面且在成形中的至少 一層光吸收層94。於本實施例中，該基板92係以玻璃材 201230351 為例但也可為彈性金屬板，並不限定於玻璃材質。 該腔至11，内部用以置放-該光伏元件甲間產品9卜 該承台2卜用以承接該光伏元件中間產品9卜 該熱源3卜設於該腔室11 _上方，係向下發出紅 外線來對該光伏元件巾職品91的光魏層％進行加熱。 。亥黑體測溫器41 ’以可活動的方式設於該腔室u，且 面對該光伏元件中間產品91的光吸收層94，用以價測該 光伏元件巾間產品91的光吸收層94的黑體輻射，進而得 到該光伏元件中間產品91的光吸收層94的溫度。於本實 轭例^，该黑體測溫器41係具有一基板探頭42以及一基 板導管44以一端連接於該基板探頭42，該基板導管44係 主要由光纖所構成，且可依需求伸入或退出該腔室u，本 實施例係說明於伸入時，該基板探頭42係面對於該光伏元 件中間產品91的光吸收層94，於該基板導管44的另一端 具有一基板溫度感測電路40，該基板溫度感測電路40係 位於該腔室11外。該基板溫度感測電路46如第二圖所示， 具有一濾光片F、一光電二極體d、一放大電路AMP以及 一濾波電路FT，其中該濾光片F係連接於該基板導管44 相對於該基板探頭42的另一端，用以過濾特定區間波長的 光’例如’其區間係為某波長的±10%的區間。由於該放大 電路AMP以及該濾波電路FT均為習知電路，其個別的電 路結構以及作動方式容不贅述。該基板溫度感測電路46 係藉由該濾光片F進行光波的過濾，再由該光電二極體d 來感測強度，並經過該放大電路AMP的放大以及該濾波 201230351 電路FT的濾波功能，而得到一電子信號並加以輸出。 接下來說明本第一實施例的操作狀態。 如第一圖所示，在進行溫度感測時，係於該腔室n 内將一該光伏元件中間產品9ί置於該承台21上，並在進 行RTP程序的過程中，隨時針對該光伏元件中間產品％ 進行溫度的感測。由於該光伏元件中間產品91的光吸收層 94會將照射於其上的熱能吸收，因此該熱源31對該光吸201230351 VI. Description of the Invention: [Technical Field] The present invention relates to a manufacturing technique of photovoltaic devices, and more particularly to a temperature sensing system used in a rapid temperature program. [Prior Art] Today's photovoltaic elements are usually provided with a layer of molybdenum (M) on top of a glass substrate or a flexible metal foil, and a light absorbing layer is formed on the molybdenum layer ( For example, CIGS (copper indium gallium selenide) layer, as (copper indium selenide) layer, in the manufacture of the light absorbing layer, the temperature must be raised to above 5 〇 0 degrees Celsius, and by sputtering, evaporation, electricity Money or inkjet (4) (4) is formed on the molybdenum layer in a manner. In the manufacturing process of the above light absorbing layer, the current mainstream technology is the RTP (Rapid Temperature~(4)) rapid temperature program (hereinafter referred to as RTP program), which is mainly used as a heat source above the button element. The upper surface of the photovoltaic element is heated. In the case of heating, the temperature of the glass substrate must be accurately measured' to be able to perform the RTP procedure correctly. However, it is difficult to measure the temperature of a glass substrate in the RTp program. The currently known temperature measurement method is measured by a thermoelectric light and an infrared pyrometer. The method of using thermoelectric light to measure temperature is contact type, and the main purpose is to transfer thermoelectricity to the surface of the object to be tested (ie, glass substrate) for temperature measurement. However, the location of the thermoelectric power dissipation is limited, and it can only be placed at the edge of the glass substrate at 201230351 and cannot be placed in the middle of the glass substrate or the region where the light absorbing layer is formed, which would otherwise affect the fabrication of the light absorbing layer. However, only the edge placed on the glass substrate can only detect the temperature of the edge, and can not measure the temperature of any area of the glass substrate, so the measured temperature data is not uniform, the temperature controlled by the RTP program. That is, it cannot be correct, and it will affect the quality of the production of photovoltaic components. Therefore, the thermometry using thermocouples is not the best temperature measurement technique for making photovoltaic components. In addition, the temperature measurement technology using the infrared rlj thermometer is a non-contact technology, but because it mainly detects the infrared rays from the object (ie, the glass substrate), the heat is secreted in the RTP program. The heat source emitted by the glass substrate also contains a large amount of infrared rays. Therefore, when detecting the infrared rays of the glass substrate, the large amount of the infrared light is disturbed by the infrared rays emitted by the heating element, so that the measured temperature data is inaccurate, and the same effect is affected. To the production quality of photovoltaic 7G parts. Therefore, the temperature measurement technique using an infrared pyrometer is not the best technique for making photovoltaic elements. SUMMARY OF THE INVENTION The main object of the invention is to provide a method for using a rapid temperature program to provide more scaled temperature measurement data than conventional techniques. The second purpose of the present invention is to provide a temperature sensing system for the rapid temperature program of the 201230351, in accordance with the present invention, in order to achieve the above objectives. - a photovoltaic element intermediate product having a heating process, the gate element of the photovoltaic element having a substrate and an upper surface coated on the substrate and in the forming a second to a light absorbing layer 'the temperature sensing system comprises: a chamber The part is for placing an intermediate product of the photovoltaic element; a cap is for receiving the intermediate product of the photovoltaic element; at least one heat source is disposed above the chamber, and the infrared light is emitted to the intermediate product of the photovoltaic element Light absorbing layer • heating; and at least one black body thermometer disposed in the chamber and facing the light absorbing layer of the intermediate product of the photovoltaic element for detecting the black body of the light absorbing layer of the intermediate product of the photovoltaic element Radiation, and in turn, the / absorbance of the light absorbing layer. Thereby, the surface temperature of the light absorbing layer can be more accurately measured, thereby improving the quality of the production. [Embodiment] In order to explain the technical features of the present invention in detail, the following preferred embodiments are described below with reference to the following drawings, wherein: as shown in the first to second figures, the first preferred embodiment of the present invention A temperature sensing system 1 for use in a fast-acquisition temperature program is mainly composed of a chamber 11, a cap 21, a heat source 31, and a black body thermometer 41, wherein: the rapid temperature program For heating a photovoltaic element intermediate product 91, in the present embodiment, the photovoltaic element intermediate product 91 has a substrate 92 and at least one light absorbing layer 94 coated on the upper surface of the substrate 92 and being formed. . In the present embodiment, the substrate 92 is made of glass material 201230351, but may be an elastic metal plate, and is not limited to a glass material. The cavity is 11 for internal placement - the photovoltaic element inter-product 9 is used to receive the photovoltaic element intermediate product 9 and the heat source 3 is disposed above the chamber 11 _ Infrared rays are emitted to heat the optical layer % of the photovoltaic component towel product 91. . The black body temperature detector 41' is disposed in the chamber u in a movable manner, and faces the light absorbing layer 94 of the photovoltaic element intermediate product 91 for measuring the light absorbing layer 94 of the photovoltaic element inter-sheet product 91. The black body radiation, in turn, results in the temperature of the light absorbing layer 94 of the photovoltaic element intermediate product 91. In the embodiment of the present invention, the black body thermometer 41 has a substrate probe 42 and a substrate conduit 44 connected to the substrate probe 42 at one end. The substrate conduit 44 is mainly composed of an optical fiber, and can be inserted as needed. Or exiting the chamber u, this embodiment illustrates that the substrate probe 42 has a substrate temperature sensing at the other end of the substrate conduit 44 for the light absorbing layer 94 of the photovoltaic element intermediate product 91 when it is extended. The circuit 40, the substrate temperature sensing circuit 40 is located outside the chamber 11. As shown in the second figure, the substrate temperature sensing circuit 46 has a filter F, a photodiode d, an amplifying circuit AMP, and a filter circuit FT, wherein the filter F is connected to the substrate conduit. 44. For the other end of the substrate probe 42, the light for filtering the wavelength of the specific section 'for example, the interval is ±10% of a certain wavelength. Since the amplifying circuit AMP and the filter circuit FT are conventional circuits, their individual circuit configurations and modes of operation are not described herein. The substrate temperature sensing circuit 46 filters the light wave by the filter F, and then senses the intensity by the photodiode d, and the amplification of the amplifier circuit AMP and the filtering function of the filter 201230351 circuit FT And get an electronic signal and output it. Next, the operational state of the first embodiment will be described. As shown in the first figure, when the temperature sensing is performed, a photovoltaic element intermediate product 9 ί is placed in the chamber n on the platform 21, and the PV is ready for the RTP process. Component intermediate product % senses temperature. Since the light absorbing layer 94 of the photovoltaic element intermediate product 91 absorbs the thermal energy irradiated thereon, the heat source 31 absorbs the light.
收層94所發出的熱能幾乎都被吸收而不會向外反射該專 體測溫器41對該光伏元件中間產品91進行感測時即幾乎 不會感測到由該光吸收層94所反射的熱能，而幾乎僅感測 到遠光吸收層94所發出的黑體ϋ射。藉此可測得溫度數 據’進而使得RTP程序的溫度控制得以正4，再進而可提 昇光伏元件的製作品質。由此可知，本發明對溫度的測量 較習知技術更為準確。 清再參閱第二圖，本發明第二較佳實施例所提供之一 種使用於快速溫度程序之溫度感測线5G，主要概同於前 揭第一實施例，不同之處在於： 例更包含有—熱源測溫器5卜該熱源測溫 、有—熱源探頭52以及一熱源測溫導管54以一端連 :==:頌52’該熱源測溫導管54係由光纖所構成， 時，該該腔室"，本實施例係說明於伸入 管54的另一 *係面對於该熱源31。於該熱源測溫導 感測電路熱源溫錢測電路56，軸源溫度 係位於外。該熱源溫度感測電路56 201230351 具有-據光片F、-光電二極體D、—放大電路AMp以及 -濾波電路FT，其電路結構及作動方式與第二圖所示之該 基板溫度感測電路46相同’其巾職光# F係連接於該熱 源測溫導管54相對於賴源探頭52的另—端用以過滤 特定區間波長的光，例如，其區間係為某波長的±1〇%的區 間。由於該放大電路AMP以及該濾波電路FT均為習知電 路，其個別的電路結構以及作動方式容不贅述。 在則揭第一實施例中’雖然該光伏元件中間產品91 的光吸收層94能吸收掉大部分的熱能而幾乎沒有反射，但 實際上該光吸收層94仍會有極少量反射的熱能，只是在第 實施例中是被忽略不計的。於本第二實施例中，該黑體 測溫器41所測得的溫度，是包含了該光伏元件中間產品 91的光吸收層94表面的熱能以及該光吸收層94受到該熱 源31的照射後所反射的熱能，再者，還再藉由該熱源測溫 器51係測得該熱源31的溫度，此外，還要參考該光吸收 層94的光反射率，即可得到該光吸收層94受到該熱源31 的照射後所反射熱能的反射率。藉此可將黑體測溫器41 所測得的溫度扣掉該光吸收層9 4所反射的熱能，即可更準 確的得到該光伏元件中間產品91的光吸收層94表面的溫 度。 在计鼻時，可參閱第四圖所示之信號變化，其中IL是 «玄熱源31的輕射信號，則是其交流的部分。iw是該光 吸收層94的反射輻射信號，AIw則是其交流的部分。，由 此可見’該光吸收層94的反射率广係如下式（1)所示。 201230351 p = ΔΙ, 式⑴ 由此可知，該光吸收層94本身的熱輻射信號Ew即為 式(2)所示：The heat energy emitted by the layer 94 is almost absorbed without being reflected outward. When the object temperature detector 41 senses the photovoltaic element intermediate product 91, it is hardly sensed to be reflected by the light absorbing layer 94. The thermal energy, while sensing only the black body radiation emitted by the high beam absorption layer 94. Thereby, the temperature data can be measured, which in turn enables the temperature control of the RTP program to be positive 4, which in turn can improve the fabrication quality of the photovoltaic element. From this, it can be seen that the temperature measurement of the present invention is more accurate than the prior art. Referring to the second figure, a temperature sensing line 5G for use in a fast temperature program according to a second preferred embodiment of the present invention is mainly similar to the first embodiment disclosed above, except that: There is a heat source temperature detector 5, the heat source temperature measuring, the heat source probe 52 and a heat source temperature measuring conduit 54 are connected at one end: ==: 颂 52' The heat source temperature measuring conduit 54 is composed of an optical fiber, when The chamber ", this embodiment is illustrated with respect to the other source of the tube 54 for the heat source 31. The heat source temperature sensing circuit 56 of the heat source temperature sensing circuit is located outside the shaft source temperature. The heat source temperature sensing circuit 56 201230351 has a light film F, a photodiode D, an amplifying circuit AMp, and a filter circuit FT, the circuit structure and the operation mode thereof and the substrate temperature sensing shown in the second figure. The circuit 46 is the same as the 'Women's job light # F system is connected to the heat source temperature measuring conduit 54 relative to the other end of the source probe 52 for filtering light of a specific interval wavelength, for example, the interval is ±1〇 of a certain wavelength. % interval. Since the amplifying circuit AMP and the filter circuit FT are conventional circuits, their individual circuit configurations and modes of operation are not described herein. In the first embodiment, although the light absorbing layer 94 of the photovoltaic element intermediate product 91 can absorb most of the thermal energy with little reflection, the light absorbing layer 94 actually has a very small amount of reflected heat energy. It is only negligible in the first embodiment. In the second embodiment, the temperature measured by the blackbody thermometer 41 is the thermal energy of the surface of the light absorbing layer 94 including the photovoltaic element intermediate product 91 and the light absorbing layer 94 is irradiated by the heat source 31. The reflected heat energy, and further, the temperature of the heat source 31 is measured by the heat source temperature detector 51. Further, the light absorbing layer 94 can be obtained by referring to the light reflectance of the light absorbing layer 94. The reflectance of the reflected thermal energy after being irradiated by the heat source 31. Thereby, the temperature measured by the black body temperature detector 41 can be deducted from the heat energy reflected by the light absorbing layer 94, and the temperature of the surface of the light absorbing layer 94 of the photovoltaic element intermediate product 91 can be more accurately obtained. When counting the nose, refer to the signal change shown in the fourth figure, where IL is the light signal of the mysterious heat source 31, which is the part of its communication. Iw is the reflected radiation signal of the light absorbing layer 94, and AIw is the portion of the alternating current. From this, it can be seen that the reflectance of the light absorbing layer 94 is broad as shown in the following formula (1). 201230351 p = ΔΙ, Equation (1) It can be seen that the heat radiation signal Ew of the light absorbing layer 94 itself is expressed by the formula (2):
式⑺Formula (7)
此外，黑體輻射係由卜朗克(Planck)定律給出，即如式 (3)所示： Μ = —— 式(3) A5(e 沉-1) 其中h是卜朗克常數，k是波茲曼(Boltzmann)常數，c 是光速，λ是波長。 因此，溫度為Τ時，黑體總輻射力即由式(4)，即史蒂 芬-波茲曼等式得出： & ⑺=|Χ(;ι，τ>α = σΤ4 式(4) 其中σ為史蒂芬-波茲曼常數。 藉由上述各式，可計算出該光吸收層94的反射率，進 201230351 而算出該光吸收層94所反射該熱源31所照射的熱能，最 後得到該光吸收層9 4的真實黑體輻射值，進而求得該光吸 收層94的真實溫度。 本第二實施例之其餘結構及所能達成之功效均概同於 前揭第一實施例，容不贅述。 請再參閱第五圖，本發明第三較佳實施例所提供之一 種使用於快速溫度程序之溫度制純⑼，主要概同於前 揭第二實施例，不同之處在於： 本第三實施例除了如同第二實施例增加了該熱源測溫 器51之外，敎包含有一額外熱源61以及一額外敎 溫器71。 ' 該額外熱源61係藉由一額外熱源導管62將熱能導引 而朝向該光伏元件中間產品91的歧收層94，辆外熱 源導管62係由光纖所構成，且可依需求伸入或退出該腔室 1卜本實施例係說明於伸入時，係照射於該光吸收層94 的局部該額外熱源61係由—交流電源64或直流脈衝 電源(圖中未示)所驅動，於本實施例十以交流電源料來舉 例，直流脈衝電源由於類似於該交流電源64故不贅述。 該額外熱源測溫器71具有一額外熱源探頭以及一 額外測溫導管74以-端連接於該額外熱源探頭72，气額 外測溫導管74係由光纖所構成，且可依需求伸入或退出^亥 腔室11，本實施例係說明於伸人時，該額外熱源探頭^ 係面對該額外熱源6卜藉此該額外熱源61所發出的執处 除了照射於光吸㈣94之局料，也騎於_額外= 201230351 探頭72。於該額外測溫導管74的另一端具有一額外熱源 溫度感測電路76，該額外熱源溫度感測電路％係位於該 腔室11外。該額外熱源溫度感測電路76具有一濾光片F、 一光電二極體D、一放大電路AMp以及一濾波電路FT， 其電路結構及作動方式與第二圖所示之該基板溫度感測電 路46相同，其中該濾光片F係連接於該額外測溫導管％ 相對於s亥額外熱源探頭72的另一端，用以過濾特定區間波 長的光，例如，其區間係為某波長的±1〇%的區間。由於該 放大電路AMP以及該濾波電路FT均為習知電路，其個別 的電路結構以及作動方式容不贅述。 此外，該黑體測溫器41係面對於該額外熱源61所照 射的光吸收層94的局部的位置。 於本第三實施例中’該黑體測溫器41所測得的溫度， 除了包含該光伏元件中間產品91的光吸收層94的熱能以 及该光吸收層94受到該熱源31的照射後所反射的熱能之 外，還包含了該額外熱源61照射於光吸收層94所反射的 熱能。而該熱源測溫器51係測得該熱源31的溫度，該額 外熱源測溫器71還測得該額外熱源61的溫度。再如前揭 第二實施例所揭露的方式，參考該光吸收層94的光反射 率，即可得到該光吸收層94反射熱能的反射率。藉此可將 黑體測溫器41所測得的溫度扣掉該光吸收層94受到該熱 源31照射所反射的熱能，以及扣掉該光吸收層94受到該 額外熱源61照射所反射的熱能’即可更準確的得到該光伏 元件中間產品91的光吸收層94的溫度。 201230351 本第三實施例中，增設該額外熱源6〗以及該額外熱源 測溫器71❸目的是在於：當該熱源因為其製作方式或誤差 而呈現非週期性的變化時，則可能在利用上述式(4)計算該 光吸收層94的反射料會有無法計算的贿，因此在本第 三實施例中加人以該交流電源64或直流脈衝電源所驅動 的額外熱_進行辅助，明加缝歧收層94 確性以及可靠性》 乂本第三實施例之其餘結構及所能達成之功效均概同於 前揭第一實施例，容不贅述。 、 由上可知In addition, the blackbody radiation is given by Planck's law, as shown in equation (3): Μ = —— (3) A5(e sink-1) where h is the Braun constant and k is Boltzmann constant, c is the speed of light, and λ is the wavelength. Therefore, when the temperature is Τ, the total radiative power of the black body is obtained by the equation (4), that is, the Steven-Bozeman equation: &(7)=|Χ(;ι,τ>α = σΤ4 (4) where σ The reflectivity of the light absorbing layer 94 can be calculated by the above equations, and the heat energy irradiated by the light absorbing layer 94 is calculated by 201230351, and finally the light absorbing is obtained. The true blackbody radiation value of the layer 94 is further determined by the actual temperature of the light absorbing layer 94. The remaining structure of the second embodiment and the achievable effects are the same as those of the first embodiment, and are not described herein. Referring to the fifth figure, a third embodiment of the present invention provides a temperature-purification (9) for use in a rapid temperature program, which is mainly similar to the second embodiment, except that: the third embodiment In addition to the addition of the heat source thermometer 51 as in the second embodiment, the crucible includes an additional heat source 61 and an additional temperature regulator 71. 'The additional heat source 61 directs thermal energy through an additional heat source conduit 62. Facing the layer 94 of the photovoltaic element intermediate product 91, outside the vehicle The heat source conduit 62 is composed of an optical fiber and can be extended into or out of the chamber as required. This embodiment is described as being applied to a portion of the light absorbing layer 94 that is exposed to light. The power source 64 or the DC pulse power source (not shown) is driven. In the tenth embodiment, the AC power source is used as an example. The DC pulse power source is similar to the AC power source 64. The additional heat source temperature detector 71 has a An additional heat source probe and an additional temperature measuring conduit 74 are connected end-to-end to the additional heat source probe 72. The gas extra temperature measuring conduit 74 is composed of an optical fiber, and can be extended into or out of the chamber 11 as needed, this embodiment It is stated that when the person is extended, the additional heat source probe is facing the additional heat source 6, whereby the other heat source 61 is issued in addition to the irradiation of the light (four) 94, and is also riding on the _ extra = 201230351 probe 72 At the other end of the additional temperature measuring conduit 74 is an additional heat source temperature sensing circuit 76 located outside the chamber 11. The additional heat source temperature sensing circuit 76 has a filter F, one photoelectric The polar body D, an amplifying circuit AMp and a filter circuit FT have the same circuit structure and operation as the substrate temperature sensing circuit 46 shown in the second figure, wherein the filter F is connected to the additional temperature measuring conduit. The other end of the additional heat source probe 72 is used to filter the light of a specific interval wavelength, for example, the interval is ±1〇% of a certain wavelength. Since the amplification circuit AMP and the filter circuit FT are both The conventional circuit, its individual circuit structure and the operation mode are not described. In addition, the black body thermometer 41 is a partial position of the light absorbing layer 94 irradiated by the additional heat source 61. In the third embodiment The temperature measured by the blackbody thermometer 41 includes, in addition to the thermal energy of the light absorbing layer 94 of the photovoltaic element intermediate product 91 and the thermal energy reflected by the light absorbing layer 94 after being irradiated by the heat source 31. The additional heat source 61 illuminates the thermal energy reflected by the light absorbing layer 94. The heat source temperature detector 51 measures the temperature of the heat source 31, and the additional heat source temperature detector 71 measures the temperature of the additional heat source 61. Further, as disclosed in the second embodiment, the reflectance of the reflected heat energy of the light absorbing layer 94 can be obtained by referring to the light reflectance of the light absorbing layer 94. Thereby, the temperature measured by the black body thermometer 41 can be deducted from the thermal energy reflected by the light absorption layer 94 by the heat source 31, and the thermal energy reflected by the light absorption layer 94 being irradiated by the additional heat source 61 can be buckled. The temperature of the light absorbing layer 94 of the photovoltaic element intermediate product 91 can be obtained more accurately. 201230351 In the third embodiment, the additional heat source 6 and the additional heat source temperature detector 71 are designed to be used when the heat source exhibits a non-periodic change due to its manufacturing mode or error. (4) Calculating the reflection material of the light absorbing layer 94 may have an uncalculated bribe. Therefore, in the third embodiment, the additional heat _ driven by the AC power source 64 or the DC pulse power source is added to assist. </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; From the above
本^明所可達成之功效在於：可提供較習 知技術更轉確的溫度測據。藉由本發明所提供之系 、洗可以解決習知技術中使用熱電麵(接觸式)或紅外 ，計(非制式)等技術所遭遇的_，並提供更為準確= 溫度測量數據，進而可以提昇光伏元件的製作品質。 【圖式簡單說明】The effect that can be achieved by this method is that it can provide a more accurate temperature measurement than the known technology. The system and the washing provided by the invention can solve the problems encountered in the prior art using thermoelectric surface (contact type) or infrared (meter) (non-standard) technology, and provide more accurate = temperature measurement data, which can be improved The quality of the production of photovoltaic components. [Simple description of the map]
第圖係本發明第一較佳實施例之架構示意圖。 第-圖係本發明_較佳實關之電路方塊圖，顯示基 板孤度感測電路、熱源溫度感測電路以及額外熱源溫度感 第三圖係本發明第二較佳實施例之架構示意圖。 第四圖係本發明第二較佳實施例之輻射信號變化圖 第五圖係本發明第三較佳實施例之架構示意圖。 12 201230351 【主要元件符號說明】 ίο使用於快速溫度程序之溫度感測系統 11腔室 21承台 31熱源 41黑體測溫器 42基板探頭 44基板導管 46基板溫度感測電路 5 0使用於快速溫度程序之溫度感測系統 51熱源測溫器 52熱源探頭The figure is a schematic diagram of the architecture of a first preferred embodiment of the present invention. The first drawing is a circuit block diagram of the preferred embodiment of the present invention, showing a substrate singularity sensing circuit, a heat source temperature sensing circuit, and an additional heat source temperature sense. The third figure is a schematic structural view of a second preferred embodiment of the present invention. The fourth embodiment is a radiation signal variation diagram of a second preferred embodiment of the present invention. The fifth diagram is a schematic structural diagram of a third preferred embodiment of the present invention. 12 201230351 [Main component symbol description] ίο Temperature sensing system for rapid temperature program 11 chamber 21 cap 31 heat source 41 black body thermometer 42 substrate probe 44 substrate conduit 46 substrate temperature sensing circuit 5 0 for rapid temperature Program temperature sensing system 51 heat source thermometer 52 heat source probe
54熱源測溫導管 56熱源溫度測測電路 60使用於快速溫度程序之溫度感測系統 62額外熱源導管 71額外熱源測溫器 74額外測溫導管 92基板 D光電二極體 FT濾波電路 61額外熱源 64交流電源 72額外熱源探頭 7 6額外熱源溫度感測電路 91光伏元件中間產品 94光吸收層 AMP放大電路 F濾光片 1354 heat source temperature measuring conduit 56 heat source temperature measuring circuit 60 temperature sensing system for rapid temperature program 62 additional heat source conduit 71 additional heat source temperature detector 74 additional temperature measuring conduit 92 substrate D photodiode FT filter circuit 61 additional heat source 64 AC power supply 72 additional heat source probe 7 6 additional heat source temperature sensing circuit 91 photovoltaic element intermediate product 94 light absorbing layer AMP amplifying circuit F filter 13