201230322 六、發明說明： 【發明所屬之技術領域】 [0001] 相關申請案的相互參照 [0002] 本申請案依35U. S. C §119之規定主張稍早於2010年10 月28日向韓國智慧財產局提出之申請案，案號為 1 0-201 0-01 06022，以及稍早於2011年5月31日向韓國 智慧財產局提出之申請案，案號為1 0-201 1 -0052386， 且被給予案名：「有機發光顯示裝置及其製造方法」之優 先權效益。 [0003] 本發明係有關於一種有機發光顯示裝置及其製造方法， 更確切地說，是有關於一種透明有機發光顯示裝置及其 製造方法。 【先前技術】 [0004] 由於寬廣的視角、高對比度、快速的反應速度、及低功 率消耗，有機發光顯示裝置已廣泛地應用於個人可攜式 裝置，包含MP3播放器、手機、電視、等等。為了使有機 ，發光顯示裝置呈現透明，已有企圖在座落於薄膜電晶體 或有機電致發光裝置（organic EL)以外的地方形成透光 區域。在此情況下，當沉積陰極時需使用精細金屬遮罩 以執行圖樣化製程，因此使用不透明金屬材料所製成的 陰極並不會形成於透光區域中。 [0005] 然而，由於在沉積陰極的製程中精細金屬遮罩需移動數 次，形成透光區域時可能發生位置錯誤，且造成透光區 域的變形。 議削产單編號A0101 1013013240-0 第4頁/共38頁 201230322 【發明内容】 [0006] 本發明提供一種透明有機發光顯示裝置，其對於外部光 線具有高透光率’以及製造該透明有機發光顯示事置之 方法。 [〇〇〇7] 本發明亦提供一種有機發光顯示裝置，其中可輕易地圖 樣化陰極，以及製造該有機發光顯示裝置之方法。 [0008]根據本發明之一態樣，其係提供一種有機發光顯示裝置 ’其包含基板、配置於基板上的複數個像素，其中每— 〇 像素包含發射光線之第一區域及傳輸光線的第二區域， 第一區域包括包含至少一薄膜電晶體之像素電路單元及 電性連接至像素電路單元且圖樣化以具有一島型的第一 電極，每一像素之第一電極係於每一複數個像素中相互 分離。其中每一像素更包含配置以覆蓋第一電極之第— 有機層、配置於第一有機層上並圖樣化以對應第—有機 層且包含發射層（EML)之複數個第二有機層、配置於第二 有機層上以覆蓋第二有機層之第三有機層、配置於第三 ◎ 彳機層上且包含圖樣化以對應第-電極之第-部分的第 i助層'以及於第—輔助層上圖樣化以對應第_ 之第二電極。 _]第—輔助層可包含配置於連接至第—部分之第二區域中 的第二部分。有機發光顯示裝置也可包含配置於第—輔 助層上’且圖樣化以對應第—辅助層之第二部分之第二 :助層。此處’第二電極可更設置於第二輔助層上，且 置於第—輔助層上之第二電極相較於圖樣化以對應第 補助層之第—部分的第二電極具有較小厚度。第三有 10013546#單編號 1013013240-0 第5頁/共38頁 201230322 機層可更配置於第二區域中。第一有機層可更配置於第 二區域中。第一輔助層可包含連接至第一部分且配置於 第二區域中的第一有機層上之第二部分。有機發光顯示 裝置亦可包含於第一輔助層上圖樣化且對應於第一輔助 層之第二部分之第二輔助層。第一有機層可包含選自由 電洞傳輸層（HTL)與電洞注入層（HIL)所組成群組中之一 層。第三有機層可包含選自由電子注入層（EIL)與電子傳 輸層（ETL)所組成群組中之一層。第一電極可與像素電路 單元重疊。每一複數個像素之第一區域可包含電路部位 與發射部位，且其中像素電路單元係配置於電路部位中 ，且其中第一電極係配置於發射部位中。每一複數個像 素之電路部位與發射部位可相互鄰接。有機發光顯示裝 置也可包含覆蓋第一電極二端之絕緣層，其係配置於第 一有機層與第一電極之二端之間。第二電極可包含鎂 (Mg)。第二電極可更沉積於第二區域上，且沉積於第二 區域上之第二電極相較於圖樣化以對應第一輔助層之第 一部分的第二電極具有較小厚度。 [0010] 根據本發明之另一態樣，其係提供一種製造有機發光顯 示裝置的方法，該方法包含將基板分隔為分別具有發射 光線之第一區域與傳輸外部光線的第二區域的複數個像 素；形成複數個像素電路單元，其係分別配置於複數個 像素之第一區域中，且分別包含一個或多個薄膜電晶體 ;形成複數個第一電極，其係分別配置於複數個像素之 第一區域中、且分別電性連接至複數個像素電路單元、 並圖樣化以具有於每一複數個像素中相互分離之一島型 10013546# 單編號 A〇101 第6頁/共38頁 1013013240-0 201230322 ;形成第一有機層以覆蓋第一電極；形成複數個第二有 機層於第一有機層上，複數個第二有機層係圖樣化以對 應第一有機層且包含發射層；形成第三有機層於第二有 機層上以覆蓋第二有機層；形成第一輔助層於第三有機 層上，第一輔助層包含圖樣化以對應於第一電極之第一 部分；以及藉由於第一區域及第二區域中沉積金屬以形 成第二電極，第二電極係於第一輔助層上圖樣化以對應 於第一部分。 [0011] 形成第一輔助層亦可包含形成第二部分，其係配置於第 Ο 二區域中且連接至第一部分。該方法亦可包含形成第二 輔助層，其係介於形成第一輔助層與形成第二電極之間 ，其中第二輔助層可於第一輔助層上圖樣化以對應第一 輔助層之第二部分。第三有機層可配置於第一區域中及 第二區域中。第一有機層可配置於第一區域中及第二區 域中。第一輔助層亦可包含配置於第二區域中之第一有 機層上且連接至第一部分之第二部分。該方法亦可包含 形成第二輔助層，其係介於形成第一輔助層與形成第二201230322 VI. Description of the Invention: [Technical Fields of the Invention] [0001] Cross-Reference to Related Applications [0002] This application claims to 35K.S.C §119 as early as October 28, 2010 to Korean wisdom The application filed by the Property Bureau, the case number is 1 0-201 0-01 06022, and the application filed to the Korea Intellectual Property Office earlier on May 31, 2011, the case number is 1 0-201 1 -0052386, and The priority of the case name: "Organic light-emitting display device and its manufacturing method" is given. The present invention relates to an organic light emitting display device and a method of fabricating the same, and more particularly to a transparent organic light emitting display device and a method of fabricating the same. [Prior Art] [0004] Organic light-emitting display devices have been widely used in personal portable devices, including MP3 players, mobile phones, televisions, etc. due to wide viewing angle, high contrast, fast response speed, and low power consumption. Wait. In order to make the organic light-emitting display device transparent, attempts have been made to form a light-transmitting region at a place other than the thin film transistor or the organic electroluminescent device (organic EL). In this case, a fine metal mask is used to deposit the cathode to perform the patterning process, so that the cathode made of the opaque metal material is not formed in the light-transmitting region. [0005] However, since the fine metal mask needs to be moved several times in the process of depositing the cathode, positional errors may occur when the light-transmitting region is formed, and deformation of the light-transmitting region is caused. SUMMARY OF THE INVENTION [0006] The present invention provides a transparent organic light-emitting display device having high light transmittance for external light 'and manufacturing the transparent organic light-emitting layer Show the method of the matter. [7] The present invention also provides an organic light-emitting display device in which a cathode can be easily mapped and a method of manufacturing the organic light-emitting display device. According to an aspect of the present invention, an organic light emitting display device includes a substrate and a plurality of pixels disposed on the substrate, wherein each of the pixels includes a first region that emits light and a portion that transmits light. a second region, the first region includes a pixel circuit unit including at least one thin film transistor and a first electrode electrically connected to the pixel circuit unit and patterned to have an island shape, and the first electrode of each pixel is tied to each of the plurality The pixels are separated from each other. Each of the pixels further includes a first organic layer configured to cover the first electrode, a plurality of second organic layers disposed on the first organic layer and patterned to correspond to the first organic layer and including an emission layer (EML), and a configuration And a third organic layer covering the second organic layer on the second organic layer, and disposed on the third 彳 层 layer and including the i-th help layer </ br> corresponding to the first portion of the first electrode and the first The auxiliary layer is patterned to correspond to the second electrode of the first. The first-auxiliary layer may include a second portion disposed in the second region connected to the first portion. The organic light emitting display device may also include a second layer disposed on the first auxiliary layer and patterned to correspond to the second portion of the first auxiliary layer: the help layer. Here, the second electrode may be further disposed on the second auxiliary layer, and the second electrode disposed on the first auxiliary layer has a smaller thickness than the second electrode patterned to correspond to the first portion of the auxiliary layer . The third has 10013546# single number 1013013240-0 page 5 / total 38 pages 201230322 The machine layer can be more configured in the second area. The first organic layer may be further disposed in the second region. The first auxiliary layer may include a second portion connected to the first portion and disposed on the first organic layer in the second region. The organic light emitting display device can also include a second auxiliary layer patterned on the first auxiliary layer and corresponding to the second portion of the first auxiliary layer. The first organic layer may include one selected from the group consisting of a hole transport layer (HTL) and a hole injection layer (HIL). The third organic layer may comprise a layer selected from the group consisting of an electron injection layer (EIL) and an electron transport layer (ETL). The first electrode may overlap with the pixel circuit unit. The first region of each of the plurality of pixels may include a circuit portion and an emission portion, and wherein the pixel circuit unit is disposed in the circuit portion, and wherein the first electrode is disposed in the emission portion. The circuit portion and the emission portion of each of the plurality of pixels may be adjacent to each other. The organic light emitting display device may further include an insulating layer covering both ends of the first electrode, and disposed between the first organic layer and the two ends of the first electrode. The second electrode may comprise magnesium (Mg). The second electrode may be deposited on the second region, and the second electrode deposited on the second region has a smaller thickness than the second electrode patterned to correspond to the first portion of the first auxiliary layer. [0010] According to another aspect of the present invention, there is provided a method of fabricating an organic light emitting display device, the method comprising dividing a substrate into a plurality of first regions each having a light emitting region and a second region transmitting external light rays Forming a plurality of pixel circuit units respectively disposed in the first region of the plurality of pixels and respectively containing one or more thin film transistors; forming a plurality of first electrodes respectively disposed in the plurality of pixels The first region is electrically connected to the plurality of pixel circuit units, respectively, and patterned to have one island type separated from each of the plurality of pixels. 10013546# Single No. A〇101 Page 6 / Total 38 Page 1013013240 -0 201230322; forming a first organic layer to cover the first electrode; forming a plurality of second organic layers on the first organic layer, the plurality of second organic layers patterning to correspond to the first organic layer and including the emissive layer; forming a third organic layer on the second organic layer to cover the second organic layer; a first auxiliary layer formed on the third organic layer, the first auxiliary layer comprising a pattern to correspond to A first portion of the electrode; and a first portion by depositing a metal on the first and second regions to form a second electrode, a second electrode system on the first auxiliary layer patterned to correspond. [0011] Forming the first auxiliary layer may also include forming a second portion disposed in the second region and connected to the first portion. The method may further include forming a second auxiliary layer between the first auxiliary layer and the second electrode, wherein the second auxiliary layer may be patterned on the first auxiliary layer to correspond to the first auxiliary layer Two parts. The third organic layer may be disposed in the first region and in the second region. The first organic layer may be disposed in the first region and in the second region. The first auxiliary layer may also include a second portion disposed on the first organic layer in the second region and connected to the first portion. The method may also include forming a second auxiliary layer that is formed between the first auxiliary layer and the second
U 電極之間，其中第二輔助層係於第一輔助層上圖樣化以 對應於第一輔助層之第二部分。金屬可包含鎂。第一有 機層可包含電洞傳輸層（HTL)或電洞注入層（HIL)。第三 有機層可包含電子注入層（EIL)或電子傳輸層（ETL)。第 一電極可與像素電路單元重疊。每一複數個像素之第一， 區域可包含電路部位與發射部位，像素電路單元係配置 於電路部位中，第一電極係配置於發射部位中。每一複 數個像素之電路部位與發射部位可相互鄰接。該方法亦 10013546#單編號姻01 第7頁/共38頁 1013013240-0 201230322 可包含形成絕緣層，其係介於形成第一電極與形成第一 有機層之間，其中絕緣層覆蓋第一電極之二端且可配置 於第一有機層與第一電極之二端之間。 【實施方式】 [0012] 在下文中將藉由參考附圖闡釋本發明之例示性實施例以 詳細描述本發明。在說明書中，“及/或”表示所列出的 元件中之至少其一，以及所列出元件的一個或多個組合 〇 [0013] 現請參閱第1圖，第1圖描繪了有機發光顯示裝置中的二 相鄰像素：第一像素P1與第二像素P2。第1圖亦繪示了有 機發光顯示裝置之剖面圖。請參閱第1圖，有機發光顯示 裝置具有顯示單元2配置於基板1上之構造。在有機發光 顯示裝置中，外部光線係經由穿透基板1與顯示單元2而 入射。 [0014] 如稍後將敘述的，由於考慮到外部光線，顯示單元2係形 成為透明的，因此於第1圖中，位於影像實現這一端的使 用者可見到基板1底端下的另一影像。雖然第1圖所顯示 的有機發光顯示裝置係為底部發射型有機發光顯示裝置 ，其中顯示單元2之影像係透過基板1而實現，有機發光 顯示裝置的種類並不限於此，因此有機發光顯示裝置可 為頂部發射型有機發光顯示裝置，其中顯示單元2之影像 係於遠離基板1的方向實現。 [0015] 請參閱第1圖，每一第一像素P1與第二像素P2均包含第一 區域31與第二區域32。來自顯示單元2之影像係於第一區 域31中實現，且外部光線係透過第二區域32而傳輸。意 10013546^^^^ A〇101 ^ 8 1 / * 38 I 1013013240-0 201230322 即’根據本發明之有機發光顯 盥第_ 衣置，母一第—像素Ρ1 含實現影像之第—㈣31與傳輸外部 第-區域32,因此當使用者不看影像時可看見外 邵光線。 [0016] 匕考量下’包含薄膜電晶體、電容、有機電致發光裝 ganlc EL)之裝置不會形成於第二區域财，因此 得以將外部紐之透光率最大化，且將由於包含薄膜電 Ο [0017] 晶體、電容、有機電致光裝置之裝置的干賴造成傳輸 外部光線的扭曲變形最小化。 現π參閱第2圖至第4圖’第2圖係為相互鄰接之紅色像素 Pr綠色像素Pg、以及藍色像素pb之平面目。第3圖係為 第2圖中沿著線段I - I所截取之紅色像素pr之剖面圖。 而第4圖係為根據本發明另一實施例詳細描述第3圖中有 機電致發光裝置之刳面圖。 [0018] Ο [0019] 請參閱第2圖，每一紅色、綠色 '藍色像素Pr、Pg、pb於 第一區域31中包含電路部位311與發射部位312。在本實 施例中，電路部位311與發射部位312係相互重疊配置。 對外部光線透明的第二區域32係鄰接第一區域31而設置 。第二區域32可與每一紅色、綠色、藍色像素Pr、Pg、 Pb分隔，但是雖然未繪示，第二區域32可被配置以延伸 重疊紅色、綠色、藍色像素Pr、Pg、Pb。在第二區域32 延伸重疊紅色、綠色、藍色像素Pr、Pg、Pb的情形中， 可增加第二區域32傳輸外部光線的面積，因此可增加整 個顯示單元2的透光率。 10013546#單編號* A0101 第9頁/共38頁 1013013240-0 201230322 [0020] 如第3圖所示，包含薄膜電晶體TR的像素電路單元係配置 於電路部位311中。請參閱第3圖，像素電路單元包含一 薄膜電晶體TR，但像素電路單元之結構不限於此。像素 電路單元更可包含複數個薄膜電晶體以及一個薄膜電晶 體與多個儲存電容，且像素電路單元亦可包含連接至薄 膜電晶體與電容的線路，例如掃描線、資料線、或Vdd線 [0021] 做為發光裝置之有機電致發光裝置係設置於發射部位312 中。有機電致發光裝置係電性連接至電路部位311之薄膜 電晶體TR。 [0022] 缓衝層211係形成於基板1上，且包含薄膜電晶體TR之像 素電路單元係形成於緩衝層211上。緩衝層211係由透明 絕緣材料製成，用於平坦化一表面以避免外來物質之滲 透，並可由各種不同可以執行此功能之材料製成。舉例 來說，缓衝層211可由無機材料製成，包含矽氧化物、矽 氮化物、>5夕氮氧化物、氧化銘、氮化銘、氧化鈦、或氮 化鈦。其可由有機材料製成，包含聚酰亞胺 (polyimide)，聚醋（polyester)或丙稀醯基（acryl) ，或包含無機材料與有機材料之多層堆疊。緩衝層211並 非必要設置之元件，因此若需要時可省略。 [0023] 半導體主動層212係形成於緩衝層211上。半導體主動層 21 2可由多晶矽形成但不限於此，因此可用氧化半導體形 成。舉例來說，半導體主動層212可由鎵-銦-鋅-氧層製 成（（In90q) (Ga90q\(Zn0))(其中a、b、c為實數且依 Δ 0 3 Z 0 U 0 序滿足&>0、13>0、（：>0)。當半導體主動層212以氧化 UKH354#單編號删1 第10頁/共38頁 1013013240-0 201230322 [0024] Ο [0025] [0026]Between the U electrodes, wherein the second auxiliary layer is patterned on the first auxiliary layer to correspond to the second portion of the first auxiliary layer. The metal may comprise magnesium. The first organic layer may include a hole transport layer (HTL) or a hole injection layer (HIL). The third organic layer may comprise an electron injection layer (EIL) or an electron transport layer (ETL). The first electrode may overlap with the pixel circuit unit. The first region of each of the plurality of pixels may include a circuit portion and an emission portion, and the pixel circuit unit is disposed in the circuit portion, and the first electrode is disposed in the emission portion. The circuit portion and the emission portion of each of the plurality of pixels may be adjacent to each other. The method may also include forming an insulating layer between the first electrode and the first organic layer, wherein the insulating layer covers the first electrode, and the insulating layer is formed between the first electrode and the first organic layer. The two ends are disposed between the first organic layer and the two ends of the first electrode. [Embodiment] The present invention will be described in detail below by explaining exemplary embodiments of the invention with reference to the attached drawings. In the specification, "and/or" means at least one of the listed elements, and one or more combinations of the listed elements. [0013] Referring now to Figure 1, Figure 1 depicts organic illumination Two adjacent pixels in the display device: a first pixel P1 and a second pixel P2. Figure 1 also shows a cross-sectional view of an organic light emitting display device. Referring to Fig. 1, the organic light-emitting display device has a configuration in which the display unit 2 is disposed on the substrate 1. In the organic light-emitting display device, external light is incident through the substrate 1 and the display unit 2. [0014] As will be described later, since the display unit 2 is formed to be transparent in consideration of external light, in FIG. 1, the user at the end of the image realization can see another one under the bottom end of the substrate 1. image. The organic light emitting display device shown in FIG. 1 is a bottom emission type organic light emitting display device, wherein the image of the display unit 2 is realized by the substrate 1 , and the type of the organic light emitting display device is not limited thereto. Therefore, the organic light emitting display device is not limited thereto. It can be a top emission type organic light emitting display device in which the image of the display unit 2 is realized in a direction away from the substrate 1. Referring to FIG. 1, each of the first pixel P1 and the second pixel P2 includes a first region 31 and a second region 32. The image from the display unit 2 is implemented in the first area 31, and the external light is transmitted through the second area 32. Italian 10013546^^^^ A〇101 ^ 8 1 / * 38 I 1013013240-0 201230322 ie 'the organic light-emitting display according to the invention _ clothing, mother-first pixel Ρ1 containing the realization of the image - (four) 31 and transmission The external first-area 32, so that the external ray is visible when the user does not look at the image. [0016] The device containing 'film transistor, capacitor, organic electroluminescent device ganlc EL' will not be formed in the second region, so the transmittance of the external button can be maximized, and the film will be included Electric Ο [0017] The dryness of the devices of crystals, capacitors, and organic electro-optic devices minimizes the distortion of the transmitted external light. Now, referring to Fig. 2 to Fig. 4, the second figure is the plane of the red pixel Pr green pixel Pg and the blue pixel pb adjacent to each other. Figure 3 is a cross-sectional view of the red pixel pr taken along line I - I in Figure 2. 4 is a cross-sectional view showing the electroluminescent device of FIG. 3 in detail according to another embodiment of the present invention. [0018] Referring to FIG. 2, each red, green 'blue pixel Pr, Pg, pb includes a circuit portion 311 and an emission portion 312 in the first region 31. In the present embodiment, the circuit portion 311 and the emission portion 312 are arranged to overlap each other. A second region 32 that is transparent to external light is disposed adjacent to the first region 31. The second region 32 may be separated from each of the red, green, and blue pixels Pr, Pg, Pb, but although not shown, the second region 32 may be configured to extend the overlapping red, green, and blue pixels Pr, Pg, Pb . In the case where the second region 32 is extended to overlap the red, green, and blue pixels Pr, Pg, Pb, the area in which the second region 32 transmits external light can be increased, so that the light transmittance of the entire display unit 2 can be increased. 10013546#单编号* A0101 Page 9 of 38 1013013240-0 201230322 [0020] As shown in FIG. 3, the pixel circuit unit including the thin film transistor TR is disposed in the circuit portion 311. Referring to Fig. 3, the pixel circuit unit includes a thin film transistor TR, but the structure of the pixel circuit unit is not limited thereto. The pixel circuit unit may further comprise a plurality of thin film transistors and a thin film transistor and a plurality of storage capacitors, and the pixel circuit unit may further comprise a line connected to the thin film transistor and the capacitor, such as a scan line, a data line, or a Vdd line. An organic electroluminescent device as a light-emitting device is disposed in the emission site 312. The organic electroluminescent device is electrically connected to the thin film transistor TR of the circuit portion 311. [0022] The buffer layer 211 is formed on the substrate 1, and a pixel circuit unit including the thin film transistor TR is formed on the buffer layer 211. The buffer layer 211 is made of a transparent insulating material for planarizing a surface to prevent penetration of foreign matter, and can be made of various materials which can perform this function. For example, the buffer layer 211 may be made of an inorganic material, including cerium oxide, cerium nitride, > pentoxide, oxidized, nitrided, titanium oxide, or titanium nitride. It may be made of an organic material, including polyimide, polyester or acryl, or a multilayer stack comprising an inorganic material and an organic material. The buffer layer 211 is not necessarily provided with components, and therefore may be omitted if necessary. [0023] The semiconductor active layer 212 is formed on the buffer layer 211. The semiconductor active layer 21 2 may be formed of polycrystalline germanium, but is not limited thereto, and thus may be formed of an oxidized semiconductor. For example, the semiconductor active layer 212 may be made of a gallium-indium-zinc-oxygen layer ((In90q) (Ga90q\(Zn0)) (where a, b, c are real numbers and are satisfied by Δ 0 3 Z 0 U 0 order) &>0, 13 > 0, (: > 0). When the semiconductor active layer 212 is oxidized by UKH354#, the number is deleted. Page 10 / 38 pages 1013013240-0 201230322 [0024] Ο [0025] [0026 ]
[0027] 半導體形成時，可更加改善第-區域31之電路部位311之 外部光線透光率，因此增加整個顯示單元2的透光率。 閘極絕緣層21 3係形成於緩衝層211上以覆蓋半導體主動 層212，且閘極電極214係形成於閘極絕緣層2丨3上。層 間絕緣層215係形成於閘極絕緣層213上以覆蓋間極電極 214，且源極電極216與汲極電極217係形成於層間絕緣 層215上，且接著分別地透過接觸孔接觸半導體主動層 212。其將了解的是薄膜電晶體TR之結構不僅限於此，因 此可能改變。 鈍化層21 8係形成以覆蓋薄膜電晶體TR。鈍化層218可為 頂端表面為平坦的單層或多層絕緣層。鈍化層218可由無 機材料及/或有機材料所製成。 如第3圖所示’電性連接至薄膜電晶MTR之有機電致發光 裝置（於第3圖中表示為EL)之第一電極221係形成於鈍化 層218上。第一電極221具有於每一像素中相互分離之一 島型形狀。第-電極221可由具有高功函數之材料製成， 例如氧化銦錫（ιτο)、氧化銦鋅（IZ0)、氧化鋅（Zn〇)、 或三氧化二銦（In2〇3)。 當第1圖之有機發光顯示裝置為一頂端發射型有機發光顯 不裝置，其中影像係於遠離基板1之方向而實現，第一電 極221可更包含反射層’其可由銀（Ag)、鎂（Mg)、鋁 (A1)、鉑（Pt)、鈀（Pd)、金（au)、鎳（Ni)、鈥（Nd)、 銥（Ir)、鉻（Cr)、鋰（Li)、或鈣（Ca)所製成。若第一 電極221為反射電極，第一電極221可覆蓋像素電路單元 10013546产單編號 A0101 第11頁/共38頁 1013013240-0 201230322 之導電圖樣，所以可能降低由於像素電路單元之導電圖 樣所散射之外部光線造成之傳輸影像之扭曲變形。 [0028] 絕緣層219係形成於鈍化層218上。絕緣層219可作用為 像素疋義層。絕緣層219覆蓋第一電極221之二端且暴露 第一電極221之中央部位。絕緣層21 9可覆蓋第二區域犯 ，且絕緣層219並不需要整個覆蓋第—區域31，但絕緣層 219必須覆蓋第一區域31之部分，特別是第一電極221的 一端。絕緣層219可由有機絕緣材料製成，例如包含丙埽 酿基樹脂（acryl based resin)、環氧基樹脂（ep〇xy based resin)、聚酰亞胺或相似物之聚合物基有機材 料，且絕緣層219的上表面可為平坦的。 [0029] 有機層223係形成於第一電極221暴露之中央部位上以及 形成於覆蓋第一電極221二端之部分絕緣層219上。如第4 圖所繪示，有機層223包含第一有機層223a、第二有機層 223b、以及第二有機層223c。第一有機層223a包含電洞 注入層（HIL)與電洞傳輸層（HTL)。第二有機層223b包含 發射層（EML)。第三有機層223c包含電子注入層（EIL)與 電子傳輸層（ETL) ^第一有機層223a與第三有機層223c 係為共同層且因此可共同地應用於所有像素，但第二有 機層223b則依據每一像素之顏色分別沉積。 [0030] 電洞注入層（HIL)可由醜菁化合物（phthalocyanine compound)製成，包含銅苯二曱藍（copper phthalocyanine)或4,4’，4” -三（咔唑基）三苯胺 (TCTA)、4,4’ ，4”-三（3-曱基苯基笨胺基）三苯胺 (m-MTDATA)、1, 3, 5-三（p-N-苯基-N-m-甲基苯）胺苯 10013546^单編號 A0101 第 12 頁 / 共 38 頁 1013013240-0 201230322 基）苯 (1,3,5-Tris(p-N-pheny1-N-ra-toly1)arainopheny1)benzene, ra-MTDAPB)、或其相似物之爆型胺（starburst-type amine)。電洞傳輸層（HTL)可由N, Ν’ -二（3-甲基苯基 )-Ν，Ν’ -二笨基-[1，卜聯苯]—4,4’ -二胺（Ν，Ν， -bis(3-methylpheny1)-Ν, N* -diphenyl-[l,l-biphenyl]-4,-diamine, TPD) 、N，N’ -二（萘-1-基）-N，N’-二苯基聯苯 (N,N -di(naphtha 1ene-1-y1)-N,N* -diphenyl benzidine，α-NPD)、或其相似物製成。電子注入層 (EIL)可由氟化鋰（LiF)、氣化鈉（NaCl)、氟化绝（CsF) 、氧化鋰（Li2〇)、氧化鋇（BaO)、或喹啉鋰（Liq)所製成 。電子傳輸層可由三（8-羥基喹啉鋁）（A1q3)所製成。 [0031] 發射層（EML)可包含基質材料和摻雜材料。基質材料之範 例可包含三（8-羥基喹啉鋁）（Alq3)、9, 10-二（萘-2-基 )蒽（9，10-di(naphth-2-yl)anthracene，AND)、3- 三丁基-9, 10-二（萘-2-基）蒽 (3-tert-butyl-9,1〇-di(naphth-2-yl)anthracene, TBAM)、4,4’ -二（2,2-二苯乙烯-1-基）-4,4’ -二甲 基笨基（4,4’ -bis(2,2-diphenyl-ethene-1-y1)-4, 4* -dimethylphenyl, DPVBi)、4,4’ -二（2,2-二苯乙 烯-1-基）-4, 4’ -二曱基苯基（4, 4’ -bis(2,2-dipheny1-ethene-l-yl)-4, 4* -dimethylphenyl，p-DMDPVBi)、5(9,9-:*** 10013546产單編號 A0101 第13頁/共38頁 1013013240-0 201230322 )(tert(9,9-diarylfluorene)， TDAF)、2-(9,9’ -旋環雙芴_2-基）-9，9’旋環二芴（2-(9，9’ -spirobifluorene-2-y1)-9,9* -spirobifluorene，BSDF)、2,7-雙（9,9，-旋環雙 芴-2-基）-9,9’ -旋環雙芴基（2,7-bis(9,9’ -spirobifluorene-2-yl)-9, 9' -spirobifluorene，TSDF)、雙（9, 9-二芳基芴 )(bis(9,9-diarylfluorene)， BDAF)、4,4’ -雙 (2, 2-二苯乙烯-1-基）-4, 4’ -二（三丁基）苯（4, 4’ -bis(2, 2-diphenyl-ethene-1-yl)-4, 4’ -di-(tert-butyl)phenyl， p-TDPVBi) 、 1，3-雙（咔 〇坐-9-基）苯（l，3-bis(carbazol-9-yl)benzene, mCP)、1，3, 5-三（咔唑-9-基）苯 (1,3,5-tris(carbazol-9-y1)benzene, tCP) '4,4 ’，4”-三（咔唑-9-基）三苯胺（4,4’，4” -tris(carbazol-9-y1)triphenylaraine, TcTa) ' 4, 4’ -雙（咔唑-9-基）聯笨（4, 4’ -bis(carbazol-9-yl)biphenyl, CBP)、4,4’ -雙（ 咔唑-9-基）-2,2’ -二甲基聯苯（4,4， bis(9-carbazolyl)-2, 2' -dimethyl-biphenyl, CBDP)、4, 4’ -雙（咔唑-9-基）-9, 9-二甲基芴（4, 4’ -bis(carbazol-9-y1)-9, 9-dimethyl-fluorene， DMFL-CBP)、4,4’ -雙（咔唑-9-基）-9,9’ -雙（9-笨基 -9H—°卡°坐）苗（4，4’ -bis(carbazol-9-yl)-9, 9-bis(9-phenyl-9H-carbazol) fluorine，FL-4CBP)、4,4’ -雙（咔唑-9-基）-9,9- IOOI3546产單職 A0101 1013013240-0 第Η頁/共38頁 201230322 二-甲苯基-芴（4,4’ -bis(carbazol-9-yl) 9,9 di toly 1 f luorene，DPFL-CBP)、9, 9-雙（9-笨基 -9 H -D卡。坐）苟 (9,9-bis(9-phenyl-9H-carbazol)fluorine, FL-2CBP)、或其相似物。摻雜材料之範例可包含4, 4’ -雙[4-(二-p-曱苯基胺）笨乙烯]聯苯（4, 4， -bis[4-(di-p-tolylami no)styry1]biphenyl, DPAVBi)、9, 10-二（萘-2-基）蒽（AND)、3-三丁基 -9, 10-二（萘-2-基）蒽（TBADN)、或其相似物。 〇 [0032] 現請參閲第4圖，第一輔助層230係形成於絕緣層21 9與有 機層223上。第一辅助層230可形成以完全覆蓋第一區域 31與第二區域32。更詳細地說，第一輔助層可包含第一 部分230a與第二部分230b。在此，第一部分23〇a係配置 於對應第一電極221之第一區域31中，而第二部分23〇b 係配置於第二區域32中與第一部分230a相連。如第4圖所 繪示，第一輔助層230之第二部分230b係形成於有機層 H 223並未形成之第二區域32之絕緣層219上。 [0033] 第一輔助層230可包含至少一選自由鋁、銀、金、及鎂金 合金其中-種材料。第-輔助層23〇的厚度以不降低第二 區域32之透料為原則。第—輔助層23G的厚度可介於約 5埃至約100埃⑴之間，且較佳為介於約10埃至約2〇埃 間。 、 透光 _在-測試中當第一輔助層23〇使用鎮與金以質量比9 :】的 比例製成且厚度為10埃時，透光率可達到99 3%。在一測 試中當第-輔助層230使祕製成且厚度為1〇 10013546#單編號Α〇101 第15頁/共38頁 1013013240-0 201230322 率可達到99.8%。根據測試的結果，其可了解的是雖然第 一輔助層230存在於第二區域32中，但第一輔助層23〇並 不會顯著地傷害第二區域32傳輸外部光線的功能。第— 辅助層230的功能將於稍後描述。 [0035] 第二輔助層235係形成於第一輔助層230上。第二輔助層 235對應於第一輔助層230的第二部分230b。第二輔助層 可由 8-羥基喹啉鋰（8-Quinol inolatD Lithium,[0027] When the semiconductor is formed, the external light transmittance of the circuit portion 311 of the first region 31 can be further improved, thereby increasing the light transmittance of the entire display unit 2. A gate insulating layer 21 3 is formed on the buffer layer 211 to cover the semiconductor active layer 212, and a gate electrode 214 is formed on the gate insulating layer 2丨3. The interlayer insulating layer 215 is formed on the gate insulating layer 213 to cover the interlayer electrode 214, and the source electrode 216 and the drain electrode 217 are formed on the interlayer insulating layer 215, and then respectively contact the semiconductor active layer through the contact hole. 212. It will be understood that the structure of the thin film transistor TR is not limited thereto and may be changed. A passivation layer 21 8 is formed to cover the thin film transistor TR. The passivation layer 218 may be a single or multiple insulating layer having a flat top surface. The passivation layer 218 can be made of an inorganic material and/or an organic material. The first electrode 221 of the organic electroluminescent device (shown as EL in Fig. 3) electrically connected to the thin film electromorphic MTR is formed on the passivation layer 218 as shown in Fig. 3. The first electrode 221 has an island shape separated from each other in each pixel. The first electrode 221 may be made of a material having a high work function, such as indium tin oxide (ITO), indium zinc oxide (IZ0), zinc oxide (Zn〇), or indium trioxide (In2〇3). When the organic light emitting display device of FIG. 1 is a top emission type organic light emitting display device, wherein the image is realized in a direction away from the substrate 1, the first electrode 221 may further include a reflective layer 'which may be made of silver (Ag), magnesium. (Mg), aluminum (A1), platinum (Pt), palladium (Pd), gold (au), nickel (Ni), niobium (Nd), iridium (Ir), chromium (Cr), lithium (Li), or Made of calcium (Ca). If the first electrode 221 is a reflective electrode, the first electrode 221 can cover the conductive pattern of the pixel circuit unit 10013546, the order number A0101, page 11 / 38 pages 1013013240-0 201230322, so the scattering due to the conductive pattern of the pixel circuit unit may be reduced. The distortion of the transmitted image caused by external light. [0028] The insulating layer 219 is formed on the passivation layer 218. The insulating layer 219 can function as a pixel smear layer. The insulating layer 219 covers both ends of the first electrode 221 and exposes a central portion of the first electrode 221. The insulating layer 21 9 may cover the second region, and the insulating layer 219 does not need to cover the entire region 31, but the insulating layer 219 must cover a portion of the first region 31, particularly one end of the first electrode 221. The insulating layer 219 may be made of an organic insulating material, for example, a polymer-based organic material including an acryl based resin, an ep〇xy based resin, a polyimide, or the like, and The upper surface of the insulating layer 219 may be flat. The organic layer 223 is formed on a central portion where the first electrode 221 is exposed and is formed on a portion of the insulating layer 219 covering both ends of the first electrode 221. As shown in Fig. 4, the organic layer 223 includes a first organic layer 223a, a second organic layer 223b, and a second organic layer 223c. The first organic layer 223a includes a hole injection layer (HIL) and a hole transport layer (HTL). The second organic layer 223b contains an emission layer (EML). The third organic layer 223c includes an electron injection layer (EIL) and an electron transport layer (ETL). The first organic layer 223a and the third organic layer 223c are a common layer and thus can be applied to all pixels in common, but the second organic layer 223b is deposited separately according to the color of each pixel. [0030] The hole injection layer (HIL) may be made of a phthalocyanine compound, including copper phthalocyanine or 4,4',4"-tris(carbazolyl)triphenylamine (TCTA). , 4,4',4"-tris(3-mercaptophenylphenylamino)triphenylamine (m-MTDATA), 1,3,5-tris(pN-phenyl-Nm-methylphenyl)amine Benzene 10013546^单单 A0101 Page 12 of 38 1013013240-0 201230322 base) Benzene (1,3,5-Tris(pN-pheny1-N-ra-toly1)arainopheny1)benzene, ra-MTDAPB), or Similar to the starburst-type amine. The hole transport layer (HTL) may be N, Ν'-bis(3-methylphenyl)-oxime, Ν'-di-p-yl-[1, bis-phenylene]-4,4'-diamine (Ν, Ν, -bis(3-methylpheny1)-Ν, N*-diphenyl-[l,l-biphenyl]-4,-diamine, TPD), N,N'-bis(naphthalen-1-yl)-N,N '-Diphenylbiphenyl (N,N-di(naphtha 1ene-1-y1)-N, N*-diphenyl benzidine, α-NPD), or the like. The electron injecting layer (EIL) may be made of lithium fluoride (LiF), sodium vaporized (NaCl), fluorinated (CsF), lithium oxide (Li 2 〇), lanthanum oxide (BaO), or lithium quinolate (Liq). to make. The electron transport layer can be made of tris(8-hydroxyquinoline aluminum) (A1q3). [0031] The emissive layer (EML) may comprise a host material and a doped material. Examples of the matrix material may include tris(8-hydroxyquinoline aluminum) (Alq3), 9,10-di(naphth-2-yl) anthracene (AND), 3-tert-butyl-9, 10-tert-butyl-9,1〇-di(naphth-2-yl)anthracene, TBAM), 4,4'-two (2,2-stilbene-1-yl)-4,4'-bis(2,2-diphenyl-ethene-1-y1)-4, 4* - Dimethylphenyl, DPVBi), 4,4'-bis(2,2-stilbene-1-yl)-4,4'-didecylphenyl (4, 4'-bis(2,2-dipheny1-ethene) -l-yl)-4, 4*-dimethylphenyl, p-DMDPVBi), 5 (9,9-:*** 10013546, single number A0101, page 13/38, 1013013240-0, 201230322) (tert(9, 9-diarylfluorene), TDAF), 2-(9,9'-cyclocyclic guanidinium-2-yl)-9,9'-ring dioxime (2-(9,9'-spirobifluorene-2-y1)- 9,9*-spirobifluorene, BSDF), 2,7-bis(9,9,-cyclocyclic fluoren-2-yl)-9,9'-cyclocyclic fluorenyl (2,7-bis (9, 9'-spirobifluorene-2-yl)-9, 9'-spirobifluorene, TSDF), bis(9,9-diarylfluorene, BDAF), 4,4'-double (2,2-distyryl-1-yl)-4, 4 -4,4'-bis(2,2-diphenyl-ethene-1-yl)-4,4'-di-(tert-butyl)phenyl, p-TDPVBi), 1, 3-bis(carbazol-9-yl)benzene, mCP), 1,3,5-tris(carbazol-9-yl)benzene (1, 3,5-tris(carbazol-9-y1)benzene, tCP) '4,4 ',4"-tris(carbazol-9-yl)triphenylamine (4,4',4"-tris(carbazol-9 -y1)triphenylaraine, TcTa) '4, 4'-bis(carbazol-9-yl)biphenyl, CBP), 4,4'-double (4,4'-bis(carbazol-9-yl)biphenyl, CBP) Oxazol-9-yl)-2,2'-dimethylbiphenyl (4,4,bis(9-carbazolyl)-2, 2'-dimethyl-biphenyl, CBDP), 4, 4'-double (咔Isoazol-9-yl)-9,9-dimethylindole (4,4'-bis(carbazol-9-y1)-9, 9-dimethyl-fluorene, DMFL-CBP), 4,4'-double ( Carbazole-9-yl)-9,9'-double (9-stupyl-9H-° card° sitting) seedlings (4,4'-bis(carbazol-9-yl)-9, 9-bis(9 -phenyl-9H-carbazol) fluorine, FL-4CBP), 4,4'-bis(carbazol-9-yl)-9,9- IOOI3546 single job A0101 1013013240-0 Page/Total 38 Page 201230322 II -tolyl-oxime (4,4'-bis(carbazol-9-yl) 9, 9 di toly 1 f luorene, DPFL-CBP), 9, 9-double (9-stupid-9 H-D card. Sit (9,9-bis(9-phenyl-9H-carbazol)fluorine, FL-2CBP), or its analog. Examples of doped materials may include 4,4'-bis[4-(di-p-nonylphenylamine) stupid ethylene]biphenyl (4,4, -bis[4-(di-p-tolylami no)styry1 ]biphenyl, DPAVBi), 9, 10-di(naphthalen-2-yl)anthracene (AND), 3-tributyl-9, 10-di(naphthalen-2-yl)anthracene (TBADN), or the like . 003 [0032] Referring now to FIG. 4, a first auxiliary layer 230 is formed on the insulating layer 219 and the organic layer 223. The first auxiliary layer 230 may be formed to completely cover the first region 31 and the second region 32. In more detail, the first auxiliary layer may include the first portion 230a and the second portion 230b. Here, the first portion 23〇a is disposed in the first region 31 corresponding to the first electrode 221, and the second portion 23〇b is disposed in the second region 32 to be connected to the first portion 230a. As shown in Fig. 4, the second portion 230b of the first auxiliary layer 230 is formed on the insulating layer 219 of the second region 32 where the organic layer H 223 is not formed. [0033] The first auxiliary layer 230 may include at least one selected from the group consisting of aluminum, silver, gold, and magnesium alloys. The thickness of the first auxiliary layer 23 is based on the principle of not lowering the diffusion of the second region 32. The thickness of the first auxiliary layer 23G may be between about 5 angstroms and about 100 angstroms (1), and preferably between about 10 angstroms and about 2 angstroms. Light transmission _In the test, when the first auxiliary layer 23 is made of a ratio of mass to gold of 10: Å and the thickness is 10 angstroms, the light transmittance can reach 99 3%. In a test, when the first-auxiliary layer 230 is made into a secret and the thickness is 1 〇 10013546#单号Α〇101 page 15/38 page 1013013240-0 201230322 rate can reach 99.8%. Based on the results of the test, it will be appreciated that although the first auxiliary layer 230 is present in the second region 32, the first auxiliary layer 23 does not significantly impair the function of the second region 32 to transmit external light. The function of the first auxiliary layer 230 will be described later. [0035] The second auxiliary layer 235 is formed on the first auxiliary layer 230. The second auxiliary layer 235 corresponds to the second portion 230b of the first auxiliary layer 230. The second auxiliary layer may be made of 8-hydroxyquinoline lithium (8-Quinol inolatD Lithium,
Liq) ' N，N-二苯基-N，N-雙（9·•笨基-9H-咔唑-3-基）二 笨基-4, 4’ -二胺 (N,N-diphenyl-N,N-bis(9-pheny1-9H-carbazo1-3-y1)biph< ,—心31^1^，111'01)1(二苯-4-基）9,9-二曱基 -N-(4(9-笨基-9H-咔唑-3-基）笨基）-9H-努-2-胺 (N(diphenyl-4-yl)9,9-dimethyl-N-(4(9-phenyl-9H-carba: HT211)、2-(4-(9, 10-二（萘-2-基）蒽-2-基）苯基）-1- 苯基-1H -苯-[D]味σ坐 (2 (4-(9, 1〇~di(naphtha 1ene-2-y1)anthracene-2-y 1) pheny1)-1-phenyl-lH-benzo-[D]imidazole’ i.... LG201)、或其相似物所製成。第二輔助層235的厚度可 形成以不降低第二區域32之透光率為原則。第二輔助層 235之功能將於稍後描述。 [0036] 第二電極222係形成以對應於第一輔助層23〇之第一部分 230a。第二電極222幾乎不形成於第二辅助層235上。第 二電極222可由具有低功函數之材料所製成。第二電極 222 可包含銀（Ag)，鎂（Mg)，鋁（A1)，鉑（Pt)，鈀（Pd)， 金（Au)，鎳（Ni)，鈥（Nd)，銥（Ir)，鉻（Cr)，鋰（Li)，or 10013546^^^41 A〇101 第16頁/共38頁 1013013240-0 201230322 鈣（Ca) ’特別是包含鎂或鎂合金的金屬。第一電極221可 做為陽極，且第二電極2 2 2可做為陰極。顯然地，第一電 極221與第二電極222的極性可以互換。最後，封裝基板4 覆蓋在形成的結構上以隔絕濕氣與氧氣使顯示結構更為 完整。第二電極222可藉由執行一般的真空沉積製程來形 成。舉例而言’第二電極222可為藉由在真空室中利用熱 蒸錢（thermal evaporation)或濺鑛（sputtering)法 沉積鎮金屬而形成的一薄膜。 [0037]在第4圖的實施例中，藉由使用精細金屬遮罩以圖樣化， 第一有機層223a與第三有機層223c可被沉積以做為對應 於第一電極221之第一區域31中所有像素的共同層。第二 有機層223b係圖樣化以對應於每一像素，亦即第二有機 層223b係藉由使用另外的精細金屬遮罩而圖樣化以對應 第一電極221。並且，第一輔助層230係藉由使用開放式 遮罩完整地沉積於第三有機層223c與絕緣層219上，並不 需要區別第一區域31與第二區域32。此後，藉由使用精 細金屬遮罩以圖樣化，第二輔助層235係沉積於有機層 223並未形成之第二區域32的絕緣層219上，以做為所有 像素的共同層。在此，不同於精細金屬遮罩，開放式遮 罩係指具有寬闊開口且不具備精細圖樣的遮罩。 [0038]第二電極222係藉由使用開放式遮罩而沉積，且在此時， 由於第一辅助層23〇與第二輔助層235，第二電極222可 僅>儿積於第一區域31的所有像素上，而無需如同相關技 術般使用精細金屬遮罩。 1013013240-0 [0039]用於形成第二電極222的金屬，特別是包含鎂或鎂合金的 10013546产單編號A01〇l 第Π頁/共38頁 201230322 金屬，可輕易地沉積於第一輔助層230上，但幾乎不沉積 於第二輔助層235上。對於選自由至少一銘、銀、及鎮銀 合金所組成群組之一金屬材料所製成的第二電極222，第 一輔助層230具有良好的附著度。然而當第二電極222由 鎂或包含鎂之合金所製成時，第二輔助層235之附著度不 佳。因此當第二電極222藉由使用包含鎂或鎂合金之金屬 沉積而成時，雖然藉由使用金屬與開放式遮罩於第一區 域31與第二區域32的所有像素上進行沉積，金屬僅沉積 於形成有第一輔助層230之第一區域31中，且幾乎不沉積 於形成有第二輔助層235的第二區域32中，因此可自動獲 得第二電極222的圖樣化效果。 [0040] 同時，若精細金屬遮罩如同用於有機層223般用以圖樣化 第二電極222時，在長時間使用下，精密金屬遮罩可能因 為沉積過程的高沉積溫度而導致變型，因此可能在製程 中引起如遮蔽效應（shadow effect)的不穩定因素。在 此情形之下，根據此實施例，第二電極222藉由利用形成 第二電極222的金屬與第一與第二輔助層230、235之間 的關係，可以僅形成於暴露了第一輔助層230的第一區域 31中，而無需使用精細金屬遮罩，因此得以解決上述的 所有問題。 [0041] 現在請參閱第5圖，第5圖係為根據本發明另一實施例詳 細描述第3圖中有機電致發光裝置另一範例之剖面圖。請 參閱第5圖，本實施例相似於第4圖之實施例，其中第一 有機層223a、第二有機層223b、第三有機層223c、第一 輔助層230、以及第二電極222係依序形成於第一電極 10013546户單編號 A〇101 第18頁/共38頁 1013013240-0 201230322 221上。此 第 外，本實施例亦相似於第4圖之實施例，其中 輔助層230與第二輔助層235係形成於第二區域32中 。然而太香 貫施例與第4圖之實施例不同之處在於，本實施 '第有機層223a延伸至第二區域32中。因此本實施 •特徵在於第一有機層223a、第一輔助層230、及第二 輔助層235係依序堆叠於第 二區域32中。 [0042]Liq) 'N,N-Diphenyl-N,N-bis(9··Styl-9H-carbazol-3-yl)diphenyl-4,4'-diamine (N,N-diphenyl- N,N-bis(9-pheny1-9H-carbazo1-3-y1)biph<,-heart 31^1^,111'01)1(diphenyl-4-yl)9,9-dimercapto-N -(4(9-styl-9H-carbazol-3-yl)phenyl)-9H-n-2-amine (N(diphenyl-4-yl)9,9-dimethyl-N-(4(9 -phenyl-9H-carba: HT211), 2-(4-(9, 10-bis(naphthalen-2-yl)indol-2-yl)phenyl)-1-phenyl-1H-benzene-[D] Σσ坐(2 (4-(9, 1〇~di(naphtha 1ene-2-y1)anthracene-2-y 1) pheny1)-1-phenyl-lH-benzo-[D]imidazole' i... LG201), or the like, may be formed. The thickness of the second auxiliary layer 235 may be formed so as not to lower the light transmittance of the second region 32. The function of the second auxiliary layer 235 will be described later. The second electrode 222 is formed to correspond to the first portion 230a of the first auxiliary layer 23A. The second electrode 222 is hardly formed on the second auxiliary layer 235. The second electrode 222 may be made of a material having a low work function. The second electrode 222 may comprise silver (Ag), magnesium (Mg), aluminum (A1), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), lanthanum ( Nd), iridium (Ir), chromium (Cr), lithium (Li), or 10013546^^^41 A〇101 Page 16 of 38 1013013240-0 201230322 Calcium (Ca) 'In particular containing magnesium or magnesium alloy The first electrode 221 can be used as an anode, and the second electrode 2 2 2 can be used as a cathode. Obviously, the polarities of the first electrode 221 and the second electrode 222 can be interchanged. Finally, the package substrate 4 is covered by the formation. Structurally, the display structure is more complete by isolating moisture and oxygen. The second electrode 222 can be formed by performing a general vacuum deposition process. For example, the second electrode 222 can be utilized by utilizing hot steam in a vacuum chamber. A thin film formed by depositing a ferrous metal by thermal evaporation or sputtering. [0037] In the embodiment of Fig. 4, the first organic layer 223a is patterned by using a fine metal mask. The third organic layer 223c may be deposited as a common layer corresponding to all the pixels in the first region 31 of the first electrode 221. The second organic layer 223b is patterned to correspond to each pixel, that is, the second organic layer 223b is patterned by using an additional fine metal mask Should first electrode 221. Moreover, the first auxiliary layer 230 is completely deposited on the third organic layer 223c and the insulating layer 219 by using an open mask, and it is not necessary to distinguish the first region 31 from the second region 32. Thereafter, by patterning using a fine metal mask, a second auxiliary layer 235 is deposited on the insulating layer 219 of the second region 32 where the organic layer 223 is not formed as a common layer of all the pixels. Here, unlike a fine metal mask, an open mask refers to a mask having a wide opening and having no fine pattern. The second electrode 222 is deposited by using an open mask, and at this time, due to the first auxiliary layer 23 and the second auxiliary layer 235, the second electrode 222 can only be accumulated in the first Fine pixels are used on all pixels of area 31 without the need to use a fine metal mask as in the related art. 1013013240-0 [0039] The metal used to form the second electrode 222, particularly 10013546 containing magnesium or magnesium alloy, is numbered A01〇l page/total 38 pages 201230322 metal, which can be easily deposited on the first auxiliary layer 230, but hardly deposited on the second auxiliary layer 235. The first auxiliary layer 230 has a good adhesion to the second electrode 222 selected from a metal material composed of at least one of a group consisting of a silver alloy and a silver alloy. However, when the second electrode 222 is made of magnesium or an alloy containing magnesium, the adhesion of the second auxiliary layer 235 is not good. Therefore, when the second electrode 222 is deposited by using a metal containing magnesium or a magnesium alloy, although deposition is performed on all the pixels of the first region 31 and the second region 32 by using a metal and an open mask, the metal is only The deposition is performed in the first region 31 in which the first auxiliary layer 230 is formed, and is hardly deposited in the second region 32 in which the second auxiliary layer 235 is formed, so that the patterning effect of the second electrode 222 can be automatically obtained. [0040] Meanwhile, if the fine metal mask is used to pattern the second electrode 222 as used for the organic layer 223, the precision metal mask may be deformed due to the high deposition temperature of the deposition process under long-term use, It may cause instability factors such as a shadow effect in the process. In this case, according to this embodiment, the second electrode 222 may be formed only by exposing the first auxiliary by utilizing the relationship between the metal forming the second electrode 222 and the first and second auxiliary layers 230, 235. The first region 31 of the layer 230, without the use of a fine metal mask, thus solves all of the above problems. Referring now to FIG. 5, FIG. 5 is a cross-sectional view showing another example of the organic electroluminescent device of FIG. 3 in detail according to another embodiment of the present invention. Referring to FIG. 5, the embodiment is similar to the embodiment of FIG. 4, wherein the first organic layer 223a, the second organic layer 223b, the third organic layer 223c, the first auxiliary layer 230, and the second electrode 222 are The sequence is formed on the first electrode 10013546, the household order number A〇101, page 18/38, 1013013240-0 201230322 221. Further, the present embodiment is similar to the embodiment of Fig. 4, in which the auxiliary layer 230 and the second auxiliary layer 235 are formed in the second region 32. However, the embodiment is different from the embodiment of Fig. 4 in that the present embodiment 'the organic layer 223a extends into the second region 32. Therefore, the present embodiment is characterized in that the first organic layer 223a, the first auxiliary layer 230, and the second auxiliary layer 235 are sequentially stacked in the second region 32. [0042]
圖中之本實施例之優點在於不需於第—有機層223&上 各別地執行圖樣化製程。除了此特徵外，設置之元件對 ^ 圖中所描述之元件具有相同或相似功能因此在 此將省略細節描述。 [_麟參，第6圖係絲據本發明另—實施例詳細描 、第圖中有機電致發光裝置另一範例之剖面圖。請參閱 第6圖，本實施例相似於第4圖之實施例，其中第一有機An advantage of this embodiment in the figure is that the patterning process is not required to be performed separately on the first organic layer 223 & Except for this feature, the components provided have the same or similar functions to the components described in the drawings, and thus the detailed description will be omitted herein. [_ 麟参, Fig. 6 is a cross-sectional view of another example of the organic electroluminescent device in the drawings according to the present invention. Referring to FIG. 6, the embodiment is similar to the embodiment of FIG. 4, wherein the first organic
層223a、第一有機層223b、第三有機層223c、第一輔助 層230、及第二電極222係依序形成於第一電極221上。 然而本實施例不同之處在於第一輔助層230與第二輔助層 235並未形成於第二區域32中’但相反的第三有機層 223c延伸至第二區域32中。在此實施例中，設置之元件 對應於第4圖中所描述之元件具有相同或相似功能，因此 在此將省略細節描述。 [0044] 請參閱第6圖’本實施例之特徵在於第三有機層223c係配 置於所有第一區域31與第二區域32中。在此，第三有機 層223c具有一材料而使形成第二電極222之金屬，特別是 鎂或鎂合金幾乎不能沉積於其上。詳細地說，第三有機 層223c可包含8-經基喧淋趣（Liq)、2~(4-(9，10-二（萘 1013013240-0 1QQ13546f單編號A0101 第19頁/共38頁 201230322 -2-基）蒽-2-基）苯基）-1-苯基-1H-苯-[D]咪唑 (LG201)、或其相似物。 [0045] 第一輔助層230係形成於第三有機層223c表面之一部分上 。詳細地說，第一輔助層230係藉由圖樣化以對應於第一 電極221而形成於第三有機層223c上。如上所述，第一輔 助層包含一材料而使形成第二電極222之金屬，特別是鎂 或鎂合金可輕易地沉積於其上。 [0046] 現請參閱第7圖，第7圖係為根據本發明另一實施例詳細 描述第3圖中有機電致發光裝置另一範例之剖面圖。請參 閱第7圖，本實施例相似於第4圖之實施例，其中第一有 機層223a、第二有機層223b、第三有機層223c、第一輔 助層230、及第二電極222係依序形成於第一電極221上 。然而本實施例不同之處在於第一輔助層230與第二輔助 層235並未形成於第二區域32中，但相反的第一有機層 223a延伸至第二區域32中。在此實施例中，設置之元件 對應於第4圖中所描述之元件具有相同或相似功能，因此 在此將省略細節描述。 [0047] 請參閱第7圖，本實施例之特徵在於第一有機層223a係配 置於所有第一區域31與第二區域32中。在此，第一有機 層223a具有一材料而使形成第二電極222之金屬，特別是 鎂或鎂合金幾乎不能沉積於其上。詳細地說，第一有機 層223a可包含。N, N-二苯基-N, N-雙（9-苯基-9H-咔唑 -3-基）二苯基-4, 4’ -二胺（ΗΤΟΙ)、N(二苯-4-基）9, 9 ’-二曱基-Ν-(4(9-苯基-9Η-咔唑-3-基）苯基）-9Η-芴 -2-胺（ΗΤ211)、或其相似物。 10013546#^ Α〇101 第20頁/共38頁 1013013240-0 201230322 [0048] 第一輔助層230係形成於第一有機層223a表面之一部分上 。詳細地說，第一輔助層230係藉由圖樣化以對應第一電 極221而形成於第一有機層223a上。如上所述，第一輔助 層230包含一材料而使形成第二電極222之金屬，特別是 鎖或鎂合金可輕易地沉積於其上。 [0049] 因此，根據第6圖與第7圖之實施例，當第二電極層222藉 由使用包含鎂或鎂合金之金屬而沉積形成時，雖然第二 電極層222藉由使用該金屬與開放式遮罩而沉積於所有像 素的第一區域31與第二區域32上，然而金屬層大部分形 〇 成於第一輔助層230上，但幾乎不附著且不形成於第一有 機層223a或第三有機層223c暴露於第二區域32之表面， 因此無需使用精細金屬遮罩，第二電極222便可自動獲得 圖樣化的效果。 [0050] 現請參閱第8圖，第8圖係為根據本發明另一實施例詳細 描述第3圖中有機電致發光裝置另一範例之剖面圖。請參 閱第8圖，第一有機層223a、第二有機層223b、第三有 機層223c、及第二電極222係依序形成於第一電極221上 。不同於第4圖之實施例，本實施例具有一結構，其中並 未形成第一輔助層230與第二輔助層235，並且相似於第7 圖之實施例，本實施例具有一結構，其中第一有機層 223a延伸到第二區域32中。 [0051] 第三有機層223c可包含一特別的摻雜材料，而使形成第 二電極222的金屬，特別是鎂或鎂合金，可輕易地沉積於 其上。此特別的摻雜材料可包含二鎢-四（六氫嘧啶并嘧 咬）（Di tungsten 10013546#單編號 A0101 第21頁/共38頁 1013013240-0 201230322 tetra(hexahydropyrimidopyrimidine))咬其相似物 。第一有機層223a包含一材料而使形成第二電極222之金 屬，特別是鎂或鎂合金，幾乎不能沉積於其上。詳細地 說，第一有機層223a可包含N，N-二笨基_N，N雙（9一笨 基-9H-咔唑-3-基）二笨基_4, 4, _二胺（Ητ〇ι)=町二笨 -4-基）9,9-二甲基_Ν_(4(9 —苯基_9Η吟唑3 —基）笨基 )-9Η-芴-2-胺（ΗΤ211)、或其相似物。 土 土 [0052] 第Ο圖之實施例使用了 [0053] 10013546#單編號 A0101 ，田尔一巢柽以數 埃（）之厚度沉積時，可形成—層包含用以形成第 222之鎂錢合匈金制於包含特雜材料的第二 機層223。上’但不附著於第一有機層如與機 上。包含特別捧雜材料的第三有機彻⑽形: 第-電極222預疋要形成於其上的_區域中，且第 層223a係、形成於第二區域32的—部分其上残形成 電極222藉由34種方法，當第二電極m藉由使用 含鎖或鎮合金的金^沉積形成時，雖然藉錢用心 屬與開放式遮罩於第—區域31與第二區域32之所有像: 進订’儿積冑金屬僅沉積於包含特別摻雜材料的第二 有機層223c上，而继Ύ 而或乎不沉積於第一有機層22知暴露 表面上’因此第二雷把 電極222可自動獲得圖樣化之效果。 此時’是否會沉積筮_咖上 ~'電極222的材料係相對的。在第 圖的實施例中，相較於第—有機層ma，用於第二以 222的材料更4易叫於包含制摻雜材料的第三有機 223c上’且在第4圖至第7圖的實施例中相較於第— 機層223a、第三有棬@〇n ' 有機層223c、與第二輔助層235,用方The layer 223a, the first organic layer 223b, the third organic layer 223c, the first auxiliary layer 230, and the second electrode 222 are sequentially formed on the first electrode 221. However, this embodiment differs in that the first auxiliary layer 230 and the second auxiliary layer 235 are not formed in the second region 32, but the opposite third organic layer 223c extends into the second region 32. In this embodiment, the elements provided have the same or similar functions as those described in Fig. 4, and thus the detailed description will be omitted herein. [0044] Please refer to FIG. 6. The present embodiment is characterized in that the third organic layer 223c is disposed in all of the first region 31 and the second region 32. Here, the third organic layer 223c has a material such that a metal forming the second electrode 222, particularly magnesium or a magnesium alloy, hardly deposits thereon. In detail, the third organic layer 223c may comprise 8-based (Liq), 2~(4-(9,10-di(naphthalene 1013013240-0 1QQ13546f single number A0101 page 19/38 pages 201230322) 2-yl)indol-2-yl)phenyl)-1-phenyl-1H-benzene-[D]imidazole (LG201), or a similar analog thereof. [0045] The first auxiliary layer 230 is formed on a portion of the surface of the third organic layer 223c. In detail, the first auxiliary layer 230 is formed on the third organic layer 223c by patterning to correspond to the first electrode 221. As described above, the first auxiliary layer contains a material such that a metal forming the second electrode 222, particularly magnesium or a magnesium alloy, can be easily deposited thereon. Referring now to FIG. 7, FIG. 7 is a cross-sectional view showing another example of the organic electroluminescent device of FIG. 3 in detail according to another embodiment of the present invention. Referring to FIG. 7, the embodiment is similar to the embodiment of FIG. 4, wherein the first organic layer 223a, the second organic layer 223b, the third organic layer 223c, the first auxiliary layer 230, and the second electrode 222 are The sequence is formed on the first electrode 221. However, this embodiment differs in that the first auxiliary layer 230 and the second auxiliary layer 235 are not formed in the second region 32, but the opposite first organic layer 223a extends into the second region 32. In this embodiment, the elements provided have the same or similar functions as those described in Fig. 4, and thus the detailed description will be omitted herein. Referring to FIG. 7, the embodiment is characterized in that the first organic layer 223a is disposed in all of the first region 31 and the second region 32. Here, the first organic layer 223a has a material such that a metal forming the second electrode 222, particularly magnesium or a magnesium alloy, hardly deposits thereon. In detail, the first organic layer 223a may be included. N, N-diphenyl-N, N-bis(9-phenyl-9H-carbazol-3-yl)diphenyl-4,4'-diamine (ΗΤΟΙ), N (diphenyl-4- 9,9 '-Dimercapto-indole-(4(9-phenyl-9Η-oxazol-3-yl)phenyl)-9Η-indol-2-amine (ΗΤ211), or a similar analog thereof. 10013546#^ Α〇101 Page 20 of 38 1013013240-0 201230322 [0048] The first auxiliary layer 230 is formed on a portion of the surface of the first organic layer 223a. In detail, the first auxiliary layer 230 is formed on the first organic layer 223a by patterning to correspond to the first electrode 221. As described above, the first auxiliary layer 230 contains a material such that a metal forming the second electrode 222, particularly a lock or a magnesium alloy, can be easily deposited thereon. [0049] Therefore, according to the embodiments of FIGS. 6 and 7, when the second electrode layer 222 is deposited by using a metal containing magnesium or a magnesium alloy, although the second electrode layer 222 is used by using the metal The open mask is deposited on the first region 31 and the second region 32 of all the pixels, but the metal layer is mostly formed on the first auxiliary layer 230, but hardly adheres to and is not formed on the first organic layer 223a. Or the third organic layer 223c is exposed to the surface of the second region 32, so that the second electrode 222 can automatically obtain the effect of patterning without using a fine metal mask. Referring now to FIG. 8, FIG. 8 is a cross-sectional view showing another example of the organic electroluminescent device of FIG. 3 in detail according to another embodiment of the present invention. Referring to Fig. 8, the first organic layer 223a, the second organic layer 223b, the third organic layer 223c, and the second electrode 222 are sequentially formed on the first electrode 221. Unlike the embodiment of FIG. 4, the embodiment has a structure in which the first auxiliary layer 230 and the second auxiliary layer 235 are not formed, and similar to the embodiment of FIG. 7, the embodiment has a structure in which The first organic layer 223a extends into the second region 32. [0051] The third organic layer 223c may comprise a special doping material, so that the metal forming the second electrode 222, particularly magnesium or a magnesium alloy, can be easily deposited thereon. This particular dopant material may comprise ditungsten-tetrakis (hexahydropyrimidopyrimidine) (Di tungsten 10013546#single number A0101 page 21/38 pages 1013013240-0 201230322 tetra(hexahydropyrimidopyrimidine)). The first organic layer 223a contains a material such that a metal forming the second electrode 222, particularly a magnesium or magnesium alloy, hardly deposits thereon. In detail, the first organic layer 223a may contain N,N-diphenyl-N,N bis(9-phenyl-9H-carbazol-3-yl)diphenyl-4,4,diamine ( Ητ〇ι)=町二笨-4-yl) 9,9-Dimethyl_Ν_(4(9-phenyl-7-carbazole-3-yl)phenyl)-9Η-芴-2-amine (ΗΤ211 ), or its analogy. Soil [0052] The embodiment of the figure is used [0053] 10013546# single number A0101, when the Tianer nest is deposited with a thickness of several angstroms (), the layer can be formed to form the 222th magnesium money. The Hungarian gold is made in a second machine layer 223 containing special materials. Upper but not attached to the first organic layer such as the machine. A third organic (10) shape comprising a special dopant material: the first electrode 222 is preliminarily formed in the region _, and the first layer 223a is formed on the portion of the second region 32, and the electrode 222 is formed thereon. By 34 methods, when the second electrode m is formed by using a gold-containing deposit containing a lock or a town alloy, although all the images of the first region and the second region 32 are borrowed by the heart and the open mask: The second deposited electrode 222 can be deposited only on the second organic layer 223c containing the special doping material, and subsequently or not deposited on the exposed surface of the first organic layer 22. Automatically obtain the effect of patterning. At this time, the material of the electrode 222 is oppositely deposited. In the embodiment of the figure, the material for the second portion 222 is more preferably referred to as the third organic 223c containing the dopant material than in the first organic layer ma, and in FIGS. 4 to 7 In the embodiment of the figure, compared to the first machine layer 223a, the third organic layer 223c, and the second auxiliary layer 235,
第22頁 /共38頁 1013013240-0 201230322 第二電極222的材料更容易沉積於第一輔助層230上。 [0054] 因此在第4圖的實施例中，當用以形成第二電極222的金 屬如同第9圖般，藉由使用開放式遮罩而沉積形成時，具 有第一厚度tl之第二電極222的第一部分222a可形成於 第一輔助層230的第一部分230a上，而具有第二厚度t2 之第二電極222之第二部分222b可形成於第二區域32之 第二輔助層235上。第二厚度t2係小於第一厚度tl，如此 可降低因為第二部分222b所造成的透光率下降。 [0055] 在此，第一厚度tl可以約500埃至1 000埃（A)之範圍形成 。然而，第一厚度tl之範圍可根據裝置之尺寸而變化。 舉例而言，在小型裝置中，第一厚度tl的範圍可在數百 埃之間變化，而在大型裝置中，第一厚度tl之範圍可在 數千埃之間變化。此時，當假定在第二區域32上沉積第 二電極222之前的透光率為100%時，第二厚度t2的範圍 可設定為讓第二電極222在第二區域32沉積之後，透光率 等於或大於70%。 [0056] 雖然並未繪示，在第5圖之實施例中，具有較小厚度之第 二電極222可如第9圖之實施例般，形成於第二區域32的 第二輔助層235上。又，在第6圖的實施例中，具有較小 厚度之第二電極222可如第9圖之實施例般，形成於第二 區域32的第三有機層223c上。 [0057] 又，在第7圖與第8圖的實施例中，具有較小厚度之第二 電極222可如第10圖之實施例般，形成於第二區域32的第 一有機層223a上。 10013546产單編號 A0101 第23頁/共38頁 1013013240-0 201230322 [0058] [0059] [0060] 本發明之-個或多個實施例 之結構，其中第-電極221重最於;^於弟2圖與第3圖 素電路早位，本發明之_個或多 7電晶體TR的像 11圖與第12圖所繪示之結構，、例亦可應用於第 素電路單元重疊配置。 /、發先二槌體並未與像 不同於第3圖之結構，第12r 亦形成於第-區域31之電路 帛二輔助層挪 透過這種方式，第二電極2 1以及第二區域32中。 <部分發射部，除了：於，第-區域31 斑"® ^ 叫徵’ &置之元件與功能 、圖中所描述者相同，在此將省略細節描述。 據本發月個或多的實施例，將可降低用以傳輸外部 光線之區域中透光率的惡化》因此使用者可輕易地透過 顯示器看到外部影像。 [0061} 教且，第二電極無需使用精細金屬遮罩而形成，因此可 以克服因為使用精細金屬遮罩所造成之透光部分形狀的 變形。最重要的是，第二電極可有效率地圖樣化因而充 分的改善製造過程。 [0062] [0063] 當本發明已參照例示性實施例特別地顯現與描述’其將 為所屬技術領域者瞭解的是，任何未脫離本發明之精神 與範疇，而對其進行之等效修改或變更’均應包含於後 附之申請專利範圍中。 【圖式簡單說明】 轉由參考接下來的詳細說明並配合附圖，將更能理解本 發明之完整評價及其許多隨之而來的優點，相似的元件 10013546#單編號 A〇l〇l 第24頁/共38頁 1013013240-0 201230322 符號代表相同或相似的元件，其中： 第1圖係為根據本發明一實施例所繪示之有機發光顯示裝 置之二相鄰像素之第一像素與第二像素； 第2圖係為有機發光顯示裝置中相互鄰接之紅色像素、綠 色像素、以及藍色像素之平面圖； 第3圖係為第2圖中沿著線段I - I所截取之紅色像素之剖 面圖； 第4圖係為根據本發明另一實施例詳細描述第3圖中之有 機電致發光裝置之剖面圖； ^ 第5圖係為根據本發明另一實施例詳細描述第3圖中之有 機電致發光裝置另一範例之剖面圖； 第6圖係為根據本發明另一實施例詳細描述第3圖中之有 機電致發光裝置另一範例之剖面圖； 第7圖係為根據本發明另一實施例詳細描述第3圖中之有 機電致發光裝置另一範例之剖面圖； 第8圖係為根據本發明另一實施例詳細描述第3圖中之有 機電致發光裝置另一範例之剖面圖； ^ 第9圖係為根據本發明另一實施例詳細描述第4圖中之有 機電致發光裝置另一範例之剖面圖； 第1 0圖係為根據本發明另一實施例詳細描述第8圖中之有 機電致發光裝置另一範例之剖面圖； 第11圖係為根據本發明另一實施例之有機發光顯示裝置 中相互鄰接之紅色像素、綠色像素、以及藍色像素之平 面圖；以及 第1 2圖係為第11圖中沿著線段Π - Π所截取之紅色像素之 剖面圖。 10013546^^'^^ A〇101 ^ 25 1 / * 38 I 1013013240-0 201230322 【主要元件符號說明】 [0064] 1 :基板 2 :顯示單元 211 :缓衝層 212 :半導體主動層 213 :閘極絕緣層 214 :閘極電極 215 :層間絕緣層 216 :源極電極 217 :汲極電極 218 :鈍化層 219 :絕緣層 221 :第一電極 222 :第二電極 222a、230a :第一部分 222b、230b :第二部分 223 :有機層 223a :第一有機層 223b :第二有機層 223c :第三有機層 230 :第一輔助層 235 :第二輔助層 31 :第一區域 311 :電路部位 312 :發射部位 32 :第二區域 10013546^^'^ A0101 第26頁/共38頁 1013013240-0 201230322 4:封裝基板 EL :有機電致光裝置 P1 :第一像素 P2 :第二像素 Pr :紅色像素 Pg :綠色像素 Pb :藍色像素 TR :薄膜電晶體 tl :第一厚度 〇 t2 :第二厚度Page 22 of 38 1013013240-0 201230322 The material of the second electrode 222 is more easily deposited on the first auxiliary layer 230. [0054] Therefore, in the embodiment of FIG. 4, when the metal used to form the second electrode 222 is formed by deposition using an open mask as in FIG. 9, the second electrode having the first thickness t1 The first portion 222a of the second electrode 222 may be formed on the first portion 230a of the first auxiliary layer 230, and the second portion 222b of the second electrode 222 having the second thickness t2 may be formed on the second auxiliary layer 235 of the second region 32. The second thickness t2 is smaller than the first thickness t1, so that the decrease in light transmittance due to the second portion 222b can be reduced. [0055] Here, the first thickness t1 may be formed in a range of about 500 angstroms to 1 000 angstroms (A). However, the range of the first thickness t1 may vary depending on the size of the device. For example, in a small device, the first thickness t1 can vary between hundreds of angstroms, while in a large device, the first thickness t1 can vary between thousands of angstroms. At this time, when it is assumed that the light transmittance before depositing the second electrode 222 on the second region 32 is 100%, the range of the second thickness t2 may be set such that the second electrode 222 is allowed to pass through after the second region 32 is deposited. The rate is equal to or greater than 70%. [0056] Although not illustrated, in the embodiment of FIG. 5, the second electrode 222 having a smaller thickness may be formed on the second auxiliary layer 235 of the second region 32 as in the embodiment of FIG. . Further, in the embodiment of Fig. 6, the second electrode 222 having a small thickness can be formed on the third organic layer 223c of the second region 32 as in the embodiment of Fig. 9. [0057] Further, in the embodiments of FIGS. 7 and 8, the second electrode 222 having a smaller thickness may be formed on the first organic layer 223a of the second region 32 as in the embodiment of FIG. . 10013546Product No. A0101 Page 23 / Total 38 Page 1013013240-0 201230322 [0059] The structure of one or more embodiments of the present invention, wherein the first electrode 221 is the most important; 2 and the third pixel circuit are early, and the structure of the image of FIG. 11 and FIG. 12 of the one or more seven transistors TR of the present invention can also be applied to the overlapping arrangement of the first circuit unit. /, the first dichroic body is not different from the structure different from the third figure, the 12th step is also formed in the circuit of the first region 31, the second auxiliary layer is moved in this way, the second electrode 2 1 and the second region 32 in. <Partial emission section, except that: -, -,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, According to one or more embodiments of the present month, the deterioration of the transmittance in the area for transmitting external light can be reduced. Therefore, the user can easily see the external image through the display. [0061] It is taught that the second electrode is formed without using a fine metal mask, so that the deformation of the shape of the light transmitting portion due to the use of the fine metal mask can be overcome. Most importantly, the second electrode can be efficiently mapped to improve the manufacturing process. [0063] The present invention has been particularly shown and described with reference to the exemplary embodiments, which are to be understood by those skilled in the art Or the change 'is to be included in the scope of the patent application attached. BRIEF DESCRIPTION OF THE DRAWINGS The complete evaluation of the present invention and its many attendant advantages will be better understood by reference to the following detailed description in conjunction with the accompanying drawings. The symbol represents the same or similar elements, wherein: FIG. 1 is a first pixel of two adjacent pixels of the organic light-emitting display device according to an embodiment of the invention. The second pixel is a plan view of red pixels, green pixels, and blue pixels adjacent to each other in the organic light-emitting display device; FIG. 3 is a red pixel taken along line I - I in FIG. 2 FIG. 4 is a cross-sectional view showing the organic electroluminescent device of FIG. 3 in detail according to another embodiment of the present invention; ^ FIG. 5 is a detailed view of FIG. 3 according to another embodiment of the present invention. FIG. 6 is a cross-sectional view showing another example of the organic electroluminescent device of FIG. 3 according to another embodiment of the present invention; FIG. 7 is a cross-sectional view showing another example of the organic electroluminescent device according to another embodiment of the present invention; According to this issue Another embodiment is a cross-sectional view showing another example of the organic electroluminescent device in FIG. 3; FIG. 8 is a view showing another example of the organic electroluminescent device in FIG. 3 according to another embodiment of the present invention. FIG. 9 is a cross-sectional view showing another example of the organic electroluminescent device of FIG. 4 in detail according to another embodiment of the present invention; FIG. 10 is a detail according to another embodiment of the present invention. A cross-sectional view showing another example of the organic electroluminescent device in FIG. 8; FIG. 11 is a red pixel, a green pixel, and a blue pixel adjacent to each other in the organic light-emitting display device according to another embodiment of the present invention. The plan view; and Fig. 12 is a cross-sectional view of the red pixel taken along line Π - 第 in Fig. 11. 10013546^^'^^ A〇101 ^ 25 1 / * 38 I 1013013240-0 201230322 [Description of main component symbols] [0064] 1 : Substrate 2 : Display unit 211 : Buffer layer 212 : Semiconductor active layer 213 : Gate Insulation layer 214: gate electrode 215: interlayer insulating layer 216: source electrode 217: drain electrode 218: passivation layer 219: insulating layer 221: first electrode 222: second electrode 222a, 230a: first portion 222b, 230b: Second portion 223: organic layer 223a: first organic layer 223b: second organic layer 223c: third organic layer 230: first auxiliary layer 235: second auxiliary layer 31: first region 311: circuit portion 312: emission site 32: second area 10013546^^'^ A0101 page 26/total 38 page 1013013240-0 201230322 4: package substrate EL: organic electro-optic device P1: first pixel P2: second pixel Pr: red pixel Pg: green Pixel Pb: blue pixel TR: thin film transistor t1: first thickness 〇t2: second thickness
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