KR102381427B1 - Organic light emitting display device - Google Patents

Abstract

In one embodiment of the present invention, a substrate, a light emitting region defined on the substrate, a peripheral region defined on the substrate and adjacent to the light emitting region, a first electrode disposed in the light emitting region, and an organic material covering the first electrode an emission layer, a first auxiliary layer disposed on the organic emission layer in the peripheral region and exposing the emission region, a second electrode formed on the organic emission layer in the emission region, and located in the peripheral region and electrically connected to the second electrode Disclosed is an organic light emitting diode display including a third electrode in contact with the .

Description

Organic light emitting display device

The present invention relates to an organic light emitting diode display and a method for manufacturing the same.

The organic light emitting display device is a self-luminous display that electrically excites an organic compound to emit light. It can be driven at a low voltage, can be easily reduced in thickness, and can solve the drawbacks pointed out as problems in the liquid crystal display device, such as a wide viewing angle and fast response speed. It is attracting attention as a next-generation display that can

For such an organic light emitting display device, there is an attempt to make the display device transparent by forming a transmissive part other than a region in which a thin film transistor or an organic light emitting device is provided.

In this case, it is necessary to form a transparent/translucent metal over the entire area on the cathode, which is the upper electrode, or pattern the opaque metal so that it is not formed on the transmission portion. When transparent/translucent metal is applied, wiring resistance is high, making it difficult to implement a large panel. When applying opaque metal, a fine metal mask commonly used in the existing organic material patterning process to form an opening pattern is used. There is a limitation in that it is difficult to use the mask).

Provided are an organic light emitting diode display capable of easily forming a pattern of a cathode, which is an upper electrode, and reducing wiring resistance thereof, and a method of manufacturing the same.

One embodiment of the present invention, a substrate; a light emitting region defined on the substrate; a peripheral region defined on the substrate and adjacent to the light emitting region; a first electrode disposed in the light emitting region; an organic light emitting layer covering the first electrode; a first auxiliary layer disposed on the organic emission layer in the peripheral region and exposing the emission region; a second electrode formed on the organic light emitting layer in the light emitting region; and a third electrode positioned in the peripheral region and in electrical contact with the second electrode.

In this embodiment, the peripheral region may include a transmission region through which external light is transmitted.

In this embodiment, a second auxiliary layer on the second electrode may be further included.

In the present embodiment, in the peripheral region, a side surface of the second auxiliary layer may be in contact with a side surface of the third electrode.

In the present embodiment, the second auxiliary layer may be located in the light emitting region and the transmissive region.

In the present embodiment, the second electrode may be provided so as not to be located in the transmission region.

In this embodiment, the second electrode is positioned in the light emitting region and the transmissive region, and the thickness of the portion positioned in the transmissive region of the second electrode is smaller than the thickness of the portion positioned in the light emitting region of the second electrode. can

In the present embodiment, in the transparent region, the second electrode may be positioned on the first auxiliary layer.

In the present embodiment, the third electrode may expose the light emitting region and the transmissive region.

In this embodiment, the third electrode may also be positioned in the light emitting region, and a thickness of a portion of the third electrode positioned in the light emitting region may be smaller than a thickness of a portion positioned in the peripheral region of the third electrode.

In the present embodiment, the third electrode may be positioned on the second auxiliary layer in the light emitting region.

In this embodiment, the adhesive force of the second electrode to the organic light emitting layer may be stronger than the adhesive force of the second electrode to the first auxiliary layer.

In this embodiment, the adhesive force of the third electrode to the second electrode may be stronger than the adhesive force of the third electrode to the second auxiliary layer.

In this embodiment, the second electrode and the third electrode may include Mg.

In this embodiment, the thickness of the third electrode may be thicker than the thickness of the second electrode.

In the present embodiment, an insulating layer covering an edge of the first electrode may be further included, and the insulating layer may include a transmission window in the transmission region.

In the present exemplary embodiment, the organic light emitting layer may include a light emitting layer formed in the light emitting area and a common layer formed in the light emitting area and the peripheral area.

In this embodiment, the common layer includes at least one of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer, and in the light emitting region, the common layer is between the first electrode and the light emitting layer and/or Alternatively, it may be positioned between the light emitting layer and the second electrode.

According to the present invention, the second electrode and the third electrode made of metal can be patterned and formed without a separate patterning mask, so there is an advantage in the process, and the second region where the second electrode and the third electrode have a transmissive region It is possible to improve the transmittance of the entire panel by preventing it from forming on the surface.

The third electrode may reduce the wiring resistance of the second electrode.

It has the advantage of being easy to apply to a large display device.

1 is a cross-sectional view schematically illustrating an embodiment of an organic light emitting diode display.
2 is a cross-sectional view schematically illustrating another exemplary embodiment of an organic light emitting diode display.
3 is a cross-sectional view schematically illustrating another exemplary embodiment of an organic light emitting diode display.
4 is a cross-sectional view illustrating an embodiment of an organic light emitting display device in more detail.
5 is a cross-sectional view illustrating another embodiment of an organic light emitting diode display in more detail.
6 is a plan view schematically illustrating an organic light emitting diode display according to an exemplary embodiment.
7 is a plan view illustrating one pixel of FIG. 6 .
FIG. 8 is a cross-sectional view taken along line I-I of FIG. 7 .
9 is a cross-sectional view showing another embodiment of the present invention.
10 is a cross-sectional view showing another embodiment of the present invention.
11 to 14 are plan views sequentially illustrating a method of manufacturing an organic light emitting display device according to an embodiment of the present invention.
15 is a plan view schematically illustrating an organic light emitting display device according to another exemplary embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the accompanying drawings.

1 is a cross-sectional view schematically illustrating an organic light emitting display device according to an embodiment of the present invention.

Referring to FIG. 1 , in the organic light emitting diode display according to an exemplary embodiment of the present invention, a display unit 2 is provided on a substrate 1 .

In such an organic light emitting display device, external light passes through the substrate 1 and the display unit 2 .

In addition, the display unit 2 is provided to allow external light to pass therethrough, as will be described later. As shown in FIG. 1 , the display unit 2 is provided so that a user can observe an image from the lower outside of the substrate 1 .

1 illustrates a first pixel P1 and a second pixel P2 which are two adjacent pixels of an organic light emitting diode display.

Each of the pixels P1 and P2 has a first area 31 and a second area 32 .

An image is realized from the display unit 2 through the first area 31 , and external light is transmitted through the second area 32 .

That is, in the present invention, each pixel (P1) (P2) is provided with a first area 31 to implement an image and a second area 32 through which external light is transmitted. You can see the external image.

In this case, external light transmittance can be maximized by not forming devices such as thin film transistors, capacitors, and organic light emitting devices in the second region 32 , and the transmitted image is transmitted to the devices such as thin film transistors, capacitors, and organic light emitting devices. It is possible to minimize distortion caused by interference.

In the embodiment shown in FIG. 1 , the image of the display unit 2 is disclosed as a bottom emission type implemented in the direction of the substrate 1 , but the present invention is not necessarily limited thereto, and as can be seen in FIG. 2 , the display Of course, the same applies to the top emission type in which the image of the part 2 is implemented in the opposite direction of the substrate 1 . In addition, as can be seen in FIG. 3 , the image of the display unit 2 may be applied to a double-sided emission type in which the image of the display unit 2 is implemented in the direction opposite to the direction of the substrate 1 and the substrate 1 .

Examples of the organic light emitting display device as described above may be more concrete as shown in FIGS. 4 and/or 5 .

Referring to FIG. 4 , the display unit 2 includes an organic light emitting unit 21 formed on a substrate 1 and a sealing substrate 23 sealing the organic light emitting unit 21 .

The sealing substrate 23 blocks the penetration of external air and moisture into the organic light emitting part 21 . 2 and 3 , the sealing substrate 23 may be formed of a transparent member so that an image realized from the organic light emitting unit 21 may be transmitted therethrough.

The edges of the substrate 1 and the sealing substrate 23 are joined by a sealing material 24 to seal the space 25 between the substrate 1 and the sealing substrate 23 . A desiccant or a filler may be located in the space 25 .

As shown in FIG. 5 , instead of the sealing substrate 23 , the organic light-emitting unit 21 can be protected from outside air by forming a thin-film sealing film 26 on the organic light-emitting unit 21 . The sealing film 26 may have a structure in which a first film containing an inorganic material such as silicon oxide or silicon nitride and a second film containing an organic material such as epoxy or polyimide are alternately stacked a plurality of times. The present invention is not limited thereto, and any sealing structure on a transparent thin film may be applied.

FIG. 6 is a plan view schematically illustrating a plurality of pixels P arranged on the substrate 1 , FIG. 7 is a plan view illustrating one pixel P of FIG. 6 , and FIG. 8 is I- of FIG. It is a cross-sectional view of I.

As shown in FIG. 6 , the substrate 1 may have a rectangular shape having sides extending along the first and second directions D1 and D2 perpendicular to each other. A side parallel to the first direction D1 may be longer than a side parallel to the second direction D2 .

On the substrate 1, a plurality of first lines 331 which are wirings extending parallel to the first direction D1, a plurality of second lines 332 which are wirings extending parallel to the second direction D2, and A third line 333 may be arranged. The first line 331 to the third line 333 may all be electrically connected to each pixel P. Although not shown in the drawing, each pixel It may be electrically connected to the pixel circuit located at (P). The pixel circuit unit of each pixel P may include a plurality of thin film transistors and storage capacitors. Each pixel circuit unit is electrically connected to a first electrode to be described later. Accordingly, the first line 331 to the third line 333 may be electrically connected to a first electrode that is a pixel electrode of each pixel P. According to an embodiment, the first line 331 may be a scan line, the second line 332 may be a data line, and the third line 333 may be a Vdd line. However, the present invention is not limited thereto, and one of the first lines 331 to 333 may be a scan line, the other may be a data line, and the other may be a Vdd line.

Each pixel P includes a first area 31 and a second area 32 . And a third region 33 is positioned between the pixels P.

According to an embodiment of the present invention, as shown in FIG. 6 , the second electrode 222 serving as a common power source for each pixel P is on a straight line extending in a direction parallel to the first line 331 . can be provided as

And the third electrode 223 is positioned in the third region 33 . According to the embodiment shown in FIG. 6 , the third electrode 223 extends in a direction parallel to the second line 332 . It may be provided on a straight line.

The third electrode 223 is in contact with the second electrode 222 , and is formed of a conductive metal, and may function as an auxiliary electrode to lower the wiring resistance of the second electrode 222 .

As shown in FIG. 7 , the first area 31 of each pixel P may include a light-emitting area 310 that emits light. According to an embodiment of the present invention, the light-emitting area 310 is It may include a first emission region 311 , a second emission region 312 , and a third emission region 313 . The first emission region 311 , the second emission region 312 , and the third emission region 313 may be a red sub-pixel, a green sub-pixel, and a blue sub-pixel, respectively.

The first electrodes 221 are disposed independently of each other in the first emission region 311 , the second emission region 312 , and the third emission region 313 .

Although not shown in the drawings, a pixel circuit part electrically connected to the first electrode 221 may be provided in the first region 31 of each pixel P, and the pixel circuit part overlaps the light emitting region 310 . It may be arranged so that it does not overlap or overlap.

A second region 32 including a transmissive region that transmits external light is disposed adjacent to the first region 31 . In FIG. 7 , the transmissive region and the second region 32 coincide with each other, but the present invention is not limited thereto, and the second region 32 may be formed wider than the transmissive region to include the transmissive region.

The second region 32 may be provided to be connected to each other over each of the first emission region 311 , the second emission region 312 , and the third emission region 313 . That is, one pixel P includes a red sub-pixel, a green sub-pixel and a blue sub-pixel, and in this case, one second region 32 is provided so as to span the red sub-pixel, the green sub-pixel and the blue sub-pixel. can be In this case, since the area of the second region 32 through which external light is transmitted is increased, the transmittance of the entire display unit 2 may be increased.

However, the present invention is not necessarily limited thereto, and the second region 32 may be independently provided for each of the first emission region 311 , the second emission region 312 , and the third emission region 313 .

Meanwhile, the pixel circuit unit may include a thin film transistor TR as shown in FIG. 8 , and the pixel circuit unit is limited to one thin film transistor TR being necessarily disposed as shown in the drawing. doesn't happen In addition to the thin film transistor TR, the pixel circuit unit may further include a plurality of thin film transistors and a storage capacitor.

Organic light emitting devices are disposed in each of the first light emitting region 311 , the second light emitting region 312 , and the third light emitting region 313 . These organic light emitting devices are electrically connected to the thin film transistor TR of the pixel circuit unit.

Specifically, as shown in FIG. 8 , a buffer film 211 is formed on the substrate 1 , and a pixel circuit unit including a thin film transistor TR is formed on the buffer film 211 .

A semiconductor active layer 212 is formed on the buffer layer 211 .

The buffer layer 211 is formed of a transparent insulating material, and serves to prevent penetration of impurity elements and planarize the surface, and may be formed of various materials capable of performing this function. For example, the buffer layer 211 may include an inorganic material such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, titanium oxide or titanium nitride, or an organic material such as polyimide, polyester, or acrylic. Or it may be formed as a laminate thereof. The buffer layer 211 is not an essential component, and may not be provided if necessary.

The semiconductor active layer 212 may be formed of polycrystalline silicon, but is not limited thereto, and may be formed of an oxide semiconductor. For example, it may be a G-I-Z-O layer [(In2O3)a(Ga2O3)b(ZnO)c layer] (a, b, and c are real numbers satisfying the condition a=0, b=0, c>0, respectively).

A gate insulating layer 213 is formed on the buffer layer 211 to cover the semiconductor active layer 212 , and a gate electrode 214 is formed on the gate insulating layer 213 .

An interlayer insulating film 215 is formed on the gate insulating film 213 to cover the gate electrode 214, and a source electrode 216 and a drain electrode 217 are formed on the interlayer insulating film 215 to form a semiconductor active layer ( 212) and through a contact hole.

The structure of the thin film transistor TR as described above is not necessarily limited thereto, and various types of thin film transistor structures are applicable.

A first insulating layer 218 is formed to cover the thin film transistor TR. The first insulating layer 218 may be a single layer or a plurality of insulating layers having a planarized top surface. The first insulating layer 218 may be formed of an inorganic material and/or an organic material.

As shown in FIG. 8 , a first electrode 221 of an organic light emitting device electrically connected to the thin film transistor TR is formed on the first insulating layer 218 . The first electrode 221 is formed in an island shape.

A second insulating layer 219 is formed on the first insulating layer 218 to cover an edge of the first electrode 221 . The second insulating layer 219 may be formed of an organic material such as acryl or polyimide.

An organic light emitting layer 220 is formed on the first electrode 221 , and a second electrode 222 is formed to cover the organic light emitting layer 220 to form an organic light emitting device.

The organic light emitting layer 220 may be a low-molecular or high-molecular organic layer. When using a low molecular weight organic layer, a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), an electron transport layer (ETL), and an electron injection layer (EIL) are used. : Electron Injection Layer) can be formed by stacking single or complex structures. These low molecular weight organic films can be formed by vacuum deposition.

The light emitting layer is independently formed for each of the red, green, and blue sub-pixels, that is, the first light emitting region 311 , the second light emitting region 312 and the third light emitting region 313 , and includes a hole injection layer, a hole transport layer, The electron transport layer and the electron injection layer are common layers, and may be formed to be common to the first light emitting region 311 , the second light emitting region 312 , and the third light emitting region 313 . 7 , the red light emitting layer may be formed on a straight line parallel to the second direction D2 to pass through the first light emitting region 311 , and the green light emitting layer may pass through the second light emitting region 312 . The blue light emitting layer may be formed on a straight line parallel to the second direction D2 so as to pass through the third light emitting region 313 , and may be formed on a straight line parallel to the second direction D2. In addition, the aforementioned common layers may be formed to cover all of the pixels P using an open mask.

However, the present invention is not necessarily limited thereto, and various modified embodiments may be applied. For example, the red light emitting layer, the green light emitting layer, and the blue light emitting layer may be formed in a dot pattern to correspond to the first light emitting region 311 , the second light emitting region 312 , and the third light emitting region 313 , respectively. Alternatively, the blue light emitting layer is formed to be common to the first light emitting region 311 , the second light emitting region 312 , and the third light emitting region 313 , and the red light emitting layer and the green light emitting layer are formed in the first light emitting region 311 and the second light emitting region, respectively. The light emitting region 312 may be formed in a dot pattern or in a straight line pattern parallel to the second direction D2 to pass through the first light emitting region 311 and the second light emitting region 312 . In addition, at least one of the common layers may be patterned in the same manner as the respective light emitting layers.

The hole injection layer HIL may be formed of a phthalocyanine compound such as copper phthalocyanine or starburst amines such as TCTA, m-MTDATA, m-MTDAPB, and the like.

The hole transport layer (HTL) is N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1-biphenyl]-4,4'-diamine (TPD), N,N' -di(naphthalen-1-yl)-N,N'-diphenyl benzidine (α-NPD) and the like.

The electron injection layer EIL may be formed using a material such as LiF, NaCl, CsF, Li2O, BaO, or Liq.

The electron transport layer (ETL) may be formed using Alq3.

The emission layer EML may include a host material and a dopant material.

As the host material, tris(8-hydroxy-quinolinato)aluminum (Alq3), 9,10-di(naphthi-2-yl)anthracene (ADN), 2-Tert-butyl-9,10-di( Naphthi-2-yl) anthracene (TBADN), 4,4'-bis (2,2-diphenyl-ethen-1-yl) biphenyl (DPVBi), 4,4'-bis (2,2-di ( 4-methylphenyl)-ethen-1-yl)biphenyl (p-DMDPVBi) and the like can be used.

As the dopant material, DPAVBi (4,4'-bis[4-(di-p-tolylamino)styryl]biphenyl), ADN (9,10-di(naph-2-tyl)anthracene), TBADN (2-tert-butyl-9,10-di(naphthi-2-yl)anthracene) and the like can be used.

The first electrode 221 may function as an anode electrode, and the second electrode 222 may function as a cathode electrode. Of course, the first electrode 221 and the second electrode 222 ) may have opposite polarities.

When the first electrode 221 functions as an anode electrode, the first electrode 221 may include ITO, IZO, ZnO, or In2O3 having a high work function. In the case of a top emission type in which an image is implemented in the opposite direction of the substrate 1 in FIG. 8 , the first electrode 221 is Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, A reflective film (not shown) including at least one of Yb, Co, Sm, and Ca may be further included.

When the second electrode 222 functions as a cathode electrode, the second electrode 222 includes Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Yb, Co, It may be formed of a metal of Sm or Ca. If the embodiment of FIG. 8 is a top emission type, the second electrode 222 should be provided to enable light transmission. To this end, the second electrode 222 may be formed as a thin film using Mg and/or an Mg alloy. Unlike the first electrode 221 , the second electrode 222 is formed as a common electrode such that a common voltage is applied across all pixels.

Since the second electrode 222 becomes a common electrode that applies a common voltage to all pixels, a voltage drop may occur when the sheet resistance of the second electrode 222 increases.

In order to solve this problem, a third electrode 223 is further formed to be electrically connected to the second electrode 222 . The third electrode 223 may be formed of a metal of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Yb, Co, Sm or Ca, and preferably The second electrode 222 may be formed of the same material.

According to the embodiment shown in FIG. 8 , after forming the organic light emitting layer 220 and before forming the second electrode 222 , the first auxiliary region 32 is formed on the organic light emitting layer 220 . A layer 231 is formed. The first auxiliary layer 231 is deposited using a mask (not shown) to be formed in the second region 32 and not to be formed in the first region 31 . The first auxiliary layer 231 may be formed in a portion of the third region 33 . For example, when the first auxiliary layer 231 is formed on a straight line parallel to the first direction as seen in FIG. 7 , the first auxiliary layer 231 is formed in the second area 32 of the third area 33 . may be formed in an area adjacent to However, the present invention is not limited thereto, and the first auxiliary layer 231 may be patterned so as not to be formed in the third region 33 .

For the first auxiliary layer 231 , it is preferable to use a material formed thereon, that is, a material to which the metal forming the second electrode 222 , in particular, Mg and/or Mg alloy cannot be well bonded.

For example, the first auxiliary layer 231 is N,N'-diphenyl-N,N'-bis(9-phenyl-9H-carbazol-3-yl)biphenyl-4,4'-diamine (N, N'-diphenyl-N,N'-bis(9-phenyl-9H-carbazol-3-yl)biphenyl-4,4'-diamine), N(diphenyl-4-yl)9,9-dimethyl-N -(4(9-phenyl-9H-carbazol-3-yl)phenyl)-9H-fluoren-2-amine(N(diphenyl-4-yl)9,9-dimethyl-N-(4(9- phenyl-9H-carbazol-3-yl)phenyl)-9H-fluorene-2-amine), 2-(4-(9,10-di(naphthalen-2-yl)anthracen-2-yl)phenyl)-1 -phenyl-1H-benzo-[D]imidazole (2-(4-(9,10-di(naphthalene-2-yl)anthracene-2-yl)phenyl)-1-phenyl-1H-benzo-[D ]imidazole), m-MTDATA　[4,4,4-tris(3-methylphenylphenylamino)triphenylamine],　α-NPD　(N,N'-bis(1-naphthyl)-N,N'-diphenyl[1,1' -biphenyl]-4,4'-diamine), or 　TPD　[4,4'-Bis[N-(3-methylphenyl)-N-phenylamino]biphenyl].

After forming the patterned first auxiliary layer 231 in the second region 32 and not in the first region 31 on the organic light emitting layer 220 , the second electrode 222 is formed.

The second electrode 222 is formed by commonly depositing a metal for forming the second electrode over all pixels including the first region 31 to the third region 33 using an open mask. At this time, as described above, the second electrode 222 may be formed as a thin film to be a transflective film.

As such, when the metal for forming the second electrode is commonly deposited over all pixels using an open mask, the metal for forming the second electrode is not well deposited on the first auxiliary layer 231 but on the organic light emitting layer 220 . Deposits well. Of course, when the organic emission layer 220 is patterned as described above, the metal for forming the second electrode may be deposited on the second insulating layer 219 on which the first auxiliary layer 231 is not formed.

At this time, the metal for forming the second electrode is not well deposited on the first auxiliary layer 231 , but is well deposited on the organic light emitting layer 220 , so that the second electrode 222 includes a transmissive region. It may be provided in a patterned shape so as not to be located in the second region 32 .

That is, the adhesive force of the second electrode 222 to the organic light emitting layer 220 is stronger than that of the second electrode 222 to the first auxiliary layer 231 , and the second electrode 222 is a thin film. Since the second electrode 222 is formed in a region where the first auxiliary layer 231 is not formed among the first region 31 and the third region 33, the second region 32 And, it is not formed in the region where the first auxiliary layer 231 is formed among the third region 33 .

Accordingly, the second electrode 222 can be easily patterned without using a separate patterning mask.

To this end, it is preferable that the second insulating layer 219 and/or the common layer be formed of a material having stronger adhesion to the metal for forming the second electrode than the first auxiliary layer 231 . For example, the second insulating layer 219 may be formed of acrylic, and the common layer, particularly the electron injection layer, may be formed of Liq.

Next, a second auxiliary layer 232 is formed in the first region 31 and the second region 32 . The second auxiliary layer 232 is formed on the second electrode 222 in the first region 31 , and is formed on the first auxiliary layer 231 in the second region 32 . The second auxiliary layer 232 is preferably patterned so as not to be formed in the third region 223 .

The second auxiliary layer 232, like the first auxiliary layer 231, can be well bonded to a material formed thereon, that is, a metal forming the third electrode 223, in particular Mg and/or Mg alloy. It is preferable to use a material without it.

The second auxiliary layer 232 is N,N'-diphenyl-N,N'-bis(9-phenyl-9H-carbazol-3-yl)biphenyl-4,4'-diamine (N, N'-diphenyl-N,N'-bis(9-phenyl-9H-carbazol-3-yl)biphenyl-4,4'-diamine), N(diphenyl-4-yl)9,9-dimethyl-N -(4(9-phenyl-9H-carbazol-3-yl)phenyl)-9H-fluoren-2-amine(N(diphenyl-4-yl)9,9-dimethyl-N-(4(9- phenyl-9H-carbazol-3-yl)phenyl)-9H-fluorene-2-amine), 2-(4-(9,10-di(naphthalen-2-yl)anthracen-2-yl)phenyl)-1 -phenyl-1H-benzo-[D]imidazole (2-(4-(9,10-di(naphthalene-2-yl)anthracene-2-yl)phenyl)-1-phenyl-1H-benzo-[D ]imidazole), m-MTDATA　[4,4,4-tris(3-methylphenylphenylamino)triphenylamine],　α-NPD　(N,N'-bis(1-naphthyl)-N,N'-diphenyl[1,1' -biphenyl]-4,4'-diamine), or 　TPD　[4,4'-Bis[N-(3-methylphenyl)-N-phenylamino]biphenyl].

The second auxiliary layer 232 functions as a mask when the third electrode 223 is formed.

That is, when the metal for forming the third electrode is commonly deposited over the first region 31 to the third region 33 using an open mask after forming the second auxiliary layer 232 , the first Since the second auxiliary layer 232 is formed in the region 31 and the second region 32 , the third electrode 223 is not well deposited in the first region 31 and the second region 32 . , may be formed only in the third region 33 .

The third electrode 223 is formed to be thicker than the second electrode 222 , thereby preventing the voltage drop of the second electrode 222 applying the common voltage.

As such, in the case of the above embodiment, the second electrode 222 and the third electrode 223 formed of a metal can be patterned and formed without a separate mask, so there is an advantage in the process, and the second electrode 222 and the third electrode The transmittance of the entire panel can be improved by preventing the 223 from being formed in the second region 32 having the transmissive region.

For the organic light emitting layer 220 , the first auxiliary layer 231 , and the second auxiliary layer 232 , it is preferable to use a material having high light transmittance in a state in which power is not applied. Make sure that the transmittance of external light is not lowered.

9 is a cross-sectional view showing another embodiment of the present invention.

Although the above-described first auxiliary layer 231 and/or second auxiliary layer 232 uses a material that is difficult to bond with a metal, particularly Mg and/or Mg alloy thereon, the first auxiliary layer 231 is And/or a small amount of metal may be deposited even on the second auxiliary layer 232 .

Accordingly, when the first auxiliary layer 231 is formed on a portion of the second region 32 and the third region 33 and is not formed on the other portions of the first region 33 and the third region 33, As in one embodiment, when the metal for the second electrode is deposited on the first region 31 to the third region 33 using an open mask, as shown in FIG. 9 , the second electrode 222 is formed in the first region ( 31) to the third region 33 may all be formed. At this time, the thickness t2 of the portion 222b positioned in a portion of the second region 31 and the third region 33 of the second electrode 222 is the first region 33 of the second electrode 222 . and the thickness t1 of the portion 222a located in another portion of the third region 33 .

In addition, when the second auxiliary layer 232 is formed in the first region 31 and the second region 32 but not in the third region 33 , the third auxiliary layer 232 is formed using an open mask as in the above-described embodiment. When the electrode metal is deposited in the first region 31 to the third region 33 , the third electrode 223 is formed in all of the first region 31 to the third region 33 as shown in FIG. 9 . can be formed. At this time, the thickness t4 of the portion 223b positioned in the first region 31 and the second region 32 of the third electrode 223 is located in the third region 33 of the third electrode 223 . It becomes much thinner than the thickness t3 of the portion 223a.

As such, in the embodiment according to FIG. 9 , the second electrode part 222b and the third electrode part 223b made of a metal material are positioned in the second region 32 that is the transmissive region. However, even in this case, since the portion 222b of the second electrode and the portion 223b of the third electrode are formed to have very thin thicknesses, the transmittance of external light may not be greatly reduced.

10 is a cross-sectional view showing another embodiment of the present invention. In the embodiment shown in FIG. 10 , in addition to the embodiment shown in FIG. 8 , the second insulating layer 219 further includes a transmission window 219a in the second region 32 . The transmission window 219a is formed by removing a portion of the second insulating layer 219 , and as the transmission window 219a is formed in the second region 32 in this way, the transmittance of external light in the second region 32 is improved. can do it Although FIG. 10 shows that the transmission window 219a is formed only on the second insulating film 219, the present invention is not limited thereto, and the first insulating film 218, the interlayer insulating film 215, the gate insulating film 213, A transmission window may be further formed in at least one of the buffer layers 211 . Of course, the structure of the transmission window as shown in FIG. 10 may be applied to the embodiment shown in FIG. 9 as well.

The structure of the present invention as described above can be more usefully utilized when applied to a large-area organic light emitting display device. For example, when a large-area organic light emitting display device, particularly an electrode thereof, is to be formed, it is difficult to apply a patterning process using a fine metal mask, so the patterning of the second electrode for the second region including the transmissive region is difficult. There were difficult limitations. However, if the structure of the present invention is used, an open mask can be used without using a fine metal mask for patterning the second electrode, so that the process application becomes more useful.

Next, a method of manufacturing an organic light emitting display device according to an embodiment of the present invention will be described.

A substrate on which the organic light emitting layer 220 is formed on each pixel P is prepared, and a first auxiliary layer 231 is formed on the substrate as shown in FIG. 11 .

As described above, the organic emission layer 220 may include red, green, and blue emission layers (EML) and common layers such as a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer. The red, green, and blue light emitting layers are independently patterned for each of the first light emitting area 311, the second light emitting area 312, and the third light emitting area 313, and the common layers are the first light emitting area 311, It may be formed to be common to the second light emitting region 312 and the third light emitting region 313 .

According to an embodiment of the present invention, the red light emitting layer may be formed on a straight line parallel to the second direction D2 to pass through the first light emitting region 311, and the green light emitting layer may be formed on the second light emitting region ( 312 ) may be formed on a straight line parallel to the second direction D2 , and the blue light emitting layer may be formed on a straight line parallel to the second direction D2 to pass through the third light emitting region 313 . can In addition, the common layers may be formed to cover all the pixels P using an open mask.

However, the present invention is not necessarily limited thereto, and various modified embodiments may be applied. For example, the red light emitting layer, the green light emitting layer, and the blue light emitting layer may be formed in a dot pattern to correspond to the first light emitting region 311 , the second light emitting region 312 , and the third light emitting region 313 , respectively. Alternatively, the blue light emitting layer is formed to be common to the first light emitting region 311 , the second light emitting region 312 , and the third light emitting region 313 , and the red light emitting layer and the green light emitting layer are formed in the first light emitting region 311 and the second light emitting region, respectively. The dot pattern may be formed in the light emitting area 312 or a straight line pattern parallel to the second direction D2 to pass through the first light emitting area 311 and the second light emitting area 312 . In addition, at least one of the common layers may be patterned in the same manner as the respective light emitting layers.

The first auxiliary layer 231 is formed in the second region 32 and is not formed in the first region 31 . The first auxiliary layer 231 may be formed in a portion of the third region 33 .

According to an embodiment of the present invention, the first auxiliary layer 231 may be formed in a straight line parallel to the first direction D1 as shown in FIG. 11 . Accordingly, the first auxiliary layer 231 may be formed on a straight line parallel to the first line 331 (see FIG. 6 ).

Next, a metal for forming the second electrode is commonly deposited over all pixels including the first region 31 to the third region 33 using an open mask. In this case, the second electrode 222 may be formed as a thin film to be a transflective film.

In this way, when the metal for forming the second electrode is commonly deposited over all pixels using an open mask, the metal for forming the second electrode is not well bonded on the first auxiliary layer 231 but on the organic light emitting layer 220 . well bonded Of course, when the organic emission layer 220 is patterned as described above, the metal for forming the second electrode may be deposited on the second insulating layer 219 on which the first auxiliary layer 231 is not formed.

Accordingly, the second electrode 222 may be formed in a straight line parallel to the first direction D1 as shown in FIG. 12 .

Next, as shown in FIG. 13 , a second auxiliary layer 232 is formed in the first region 31 and the second region 32 . The second auxiliary layer 232 is formed on the second electrode 222 in the first region 31 , and is formed on the first auxiliary layer 231 in the second region 32 . The second auxiliary layer 232 is preferably patterned so as not to be formed in the third region 223 .

According to an embodiment of the present invention, the second auxiliary layer 232 may be formed in a straight line parallel to the second direction D2 as shown in FIG. 13 . Accordingly, the second auxiliary layer 232 may be formed on a straight line parallel to the second line 332 (see FIG. 6 ).

Next, a metal for forming the third electrode is commonly deposited over the first region 31 to the third region 33 using an open mask. In this case, the second auxiliary layer 232 functions as a mask for forming the third electrode 223 . Accordingly, the third electrode 223 is not well formed in the first region 31 and the second region 32, but may be formed only in the third region 33, and as shown in FIG. 14, the third electrode 223 ) may be formed on a straight line parallel to the second direction D2. Accordingly, the third electrode 223 may be formed on a straight line parallel to the second line 332 (see FIG. 6 ). The third electrode 223 may be formed to be thicker than the second electrode 222 .

In this way, the second electrode 222 and the third electrode 223 formed of metal can be patterned and formed without a separate mask, which has an advantage in the process, and the second electrode 222 and the third electrode 223 are It is possible to improve the transmittance of the entire panel by preventing it from being formed in the second region 32 having the transmissive region.

Although the manufacturing method according to FIGS. 11 to 14 shows the manufacturing method of the embodiment shown in FIG. 8 , it goes without saying that the same may be applied to the embodiment shown in FIGS. 9 and 10 .

6 , the long side of the substrate 1 extends along the first direction D1 and the short side of the substrate 1 extends along the second direction D2. However, the present invention is not necessarily limited thereto, and as shown in FIG. 15 , the short side of the substrate 1 extends along the first direction D1 , and the long side of the substrate 1 extends in the second direction D2 . Of course, the same can be applied to a structure extending along the

Although the present invention has been described with reference to one embodiment shown in the accompanying drawings, it will be understood that this is merely exemplary, and that various modifications and equivalent other embodiments are possible therefrom by those skilled in the art. will be able Accordingly, the true protection scope of the present invention should be defined only by the appended claims.

Claims (18)

Board;
a plurality of pixels defined on the substrate, each pixel including a first area including a light emitting area for emitting light and a second area including a transmissive area for transmitting light;
a third region defined on a substrate positioned between the plurality of pixels;
a first electrode disposed in each of the plurality of pixels and disposed in the first area of each pixel;
an organic light emitting layer covering the first electrode;
a first auxiliary layer disposed on the organic light emitting layer in the second region and the third region and exposing the first region;
a second electrode formed on the organic light emitting layer in the first region and positioned on the same layer as the first auxiliary layer;
a second auxiliary layer disposed in the first region and the second region and exposing the third region; and
and a third electrode positioned in the third region and in electrical contact with the second electrode. The method of claim 1,
The second electrode exposes the second region. According to claim 1,
The second electrode is further disposed in the second region,
A thickness of a portion of the second electrode in the second region is thinner than a thickness of a portion of the second electrode in the first region. 4. The method of claim 3,
and the second electrode is positioned on the first auxiliary layer in the second region. According to claim 1,
the second electrode is disposed in the second region;
A thickness of a portion of the third electrode in the first region or the second region is thinner than a thickness of a portion of the third electrode in the third region. According to claim 1,
The second electrode is located in the light emitting region and the transmissive region,
and a thickness of a portion of the second electrode positioned in the transmissive region is thinner than a thickness of a portion positioned in the light emitting region of the second electrode. 7. The method of claim 6,
and the third electrode is positioned on the second auxiliary layer in the first region and the second region. According to claim 1,
and a thickness of the third electrode is greater than a thickness of the second electrode. According to claim 1,
and an adhesive force of the second electrode to the organic light emitting layer is stronger than an adhesive force of the second electrode to the first auxiliary layer. According to claim 1,
At least one of the first auxiliary layer and the second auxiliary layer is N, ,N'-diphenyl-N,N'-bis(9-phenyl-9H-carbazol-3-yl)biphenyl-4,4'- diamine, N(diphenyl-4-yl)9,9-dimethyl-N-(4(9-phenyl-9H-carbazol-3-yl)phenyl)-9H-fluorene-2-amine, 2-(4-( 9,10-di(naphthalene-2-yl)anthracene-2-yl)phenyl)-1-phenyl-1H-benzo-[D]imidazole, 4,4',4''-tris(3-methylphenylphenylamino)triphenylamine , N,N'-bis(1-naphthyl)-N,N'-diphenyl[1,1'-biphenyl]-4,4'-diamine, or 4,4'-Bis[N-(3-methylphenyl) -N-phenylamino]biphenyl containing organic light emitting display. 11. The method of claim 10,
In the emission region, the third electrode is positioned on the second auxiliary layer. According to claim 1,
The second electrode and the third electrode include magnesium. According to claim 1,
a plurality of first wires extending in a first direction and electrically connected to the first electrodes; and
Further comprising; a plurality of second wires extending in a second direction perpendicular to the first direction and electrically connected to the first electrode, respectively;
and the first auxiliary layer is positioned along a straight line parallel to the first wiring. 14. The method of claim 13,
The second electrode is positioned along a straight line parallel to the first wiring. 14. The method of claim 13,
The second auxiliary layer is positioned along a straight line parallel to the second wiring. 14. The method of claim 13,
The third electrode is positioned along a straight line parallel to the second wiring. According to claim 1,
The organic light emitting layer includes an emission layer formed in the first region and a common layer formed in the first region, the second region, and the third region. 18. The method of claim 17,
The common layer includes at least one of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer,
In the first region, the common layer is positioned in at least one of between the first electrode and the emission layer and between the emission layer and the second electrode.

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