201230268, 六、發明說明： 【發明所屬之技術領域】 本發明的實施形態是有關於一種發光模組（module) 以及裝入有該發光模組的照明設備，上述發光模組是將多 個發光元件並排地安裝於基板上而成。 【先前技術】 近年來’將多個發光元件（例如發光二極體（Light Emitting Diode，LED))並排地安裝於基板上而成的發光 模組已被開發，裝入有此種發光模組的照明設備正在漸漸 普及。 發光模組包括檢查步驟中所使用的對準標記（亦稱為 基標（fiducial mark))，上述檢查步驟檢查多個發光元件是 否已正常地安裝至基板上的規定位置。對準標記偏離發光 ，件的區域’ 與用以對發光元件供電的供電圖案 (pattern)分開地形成於基板表面。 ' 封構：U述對準標記例如用以對透鏡〇ens)狀的密 人有多個私Ϊ偏移進行判定’或者在以模組為單位來對集 述透模組的集合基板進行分割時被用作記號，上 这透鏡狀的密封構件將發光元件予以密封。 上 記與造步驟予以簡化’對準標 圖案會對發光量基板表面。此時’由於供電 表面電鏟反射率高的=因此’為了具有高反射率，於 標記與供電圖案同時形銀）層。亦即，當要對準 或之清况，可利用-次性的電解電 201230268 鍵來形成兩者。201230268, VI. Description of the Invention: [Technical Field] The present invention relates to a light-emitting module and an illumination device incorporating the same, the light-emitting module The components are mounted side by side on the substrate. [Prior Art] In recent years, a light-emitting module in which a plurality of light-emitting elements (for example, Light Emitting Diodes (LEDs)) are mounted side by side on a substrate has been developed, and such a light-emitting module is incorporated. Lighting equipment is gradually gaining popularity. The light-emitting module includes an alignment mark (also referred to as a fiducial mark) used in the inspection step, and the inspection step checks whether the plurality of light-emitting elements have been normally mounted to a prescribed position on the substrate. The alignment mark deviates from the light emission, and the area ' of the member is formed on the surface of the substrate separately from the power supply pattern for supplying power to the light-emitting element. 'Catalyst: U-alignment mark, for example, for the lens 〇ens, the mility person has multiple private offsets to determine' or divide the collective substrate of the set-through module in units of modules The time is used as a mark, and the lenticular sealing member seals the light emitting element. The above description and fabrication steps are simplified. The alignment pattern will illuminate the substrate surface. At this time, since the power supply surface shovel has a high reflectance = therefore, in order to have a high reflectance, a silver layer is formed at the same time as the power supply pattern. That is, when it is to be aligned or cleared, the second-order electrolysis 201230268 key can be used to form both.
[先前技術文獻] [專利文獻；I[Prior Technical Literature] [Patent Literature; I
[專利文獻1]日 號公報 本專利早期公開公報特開2⑻9_94181 曰本專利早期公開公報特開 [專利文獻2J 2010-186814 號公報 【發明内容】 =?、ί、電圖案相比較，對準標記的面積極小。区 此’若同_兩者進行電鍍，則相同量的f流會流入至势 準標記與供電圖案。與供電圖案相崎，在對準汽 動的電流的密度更高。藉此，對準標記的電制^匕供^ 圖案的電鑛層更厚，導致產生電鑛不均。 如此’綠解標記巾產生親不均，财對該對辟 標記的圖案進行識別時，導致錯誤識別的可能性變高。充 錯誤地識別對準標記，則有可能無法正常地安裝發光天 件，有可能使密封構件偏移，且基板的形狀有可能變得不 穩定。亦即，於如上所述的情形時，發光模組的品質 發光特性變差。 措此’希望開發出品質南且具有良好的發光特性的發 光模組、以及裝入有此種發光模組的照明設備。 實施形態的發光模組包括：供電圖案，為了對發光元 件供電而形成於基板表面；以及對準標記，與上述供電圖 案形成為一體。 4 201230268 又’其他實施形態的發光模組包括：供電圖案，具有 與發光元件相鄰接地形成於基板表面的基底（base)層、 及積層於該基底層的表層；以及對準標記，與上述供電圖 案分開地作為基底層的一部分而形成於基板表面。 【實施方式】 以下，一面參照圖式，一面詳細地對實施形態進行說 明。 於圖1中表示有LED燈（lamp) 100的外觀圖，作為 裝入有實施形態的發光模组的照明設備的一例。又，於圖 2中表示有沿著軸線來將圖丨的1^〇燈1〇〇予以切斷所得 的剖面圖。 LED燈1〇〇包括：本體102、絕緣構件m、燈口 115、 點燈裝置12卜發光模組1、以及照明外罩（c〇ver) 161。[Patent Document 1] Japanese Patent Laid-Open Publication No. Hei 2 (8) 9-94181 pp. Patent Application Publication No. JP-A No. 2010-186814--A. The face is small and positive. When both of these are plated, the same amount of f flow will flow into the potential mark and the power supply pattern. In contrast to the power supply pattern, the density of the current in the alignment is higher. Thereby, the electro-mineral layer of the electro-patterned pattern of the alignment mark is thicker, resulting in unevenness of electric ore. Thus, the 'green-marking towel' is unevenly generated, and when the pattern of the mark is recognized, the possibility of erroneous recognition becomes high. When the alignment mark is incorrectly recognized, there is a possibility that the light-emitting element may not be mounted normally, the sealing member may be displaced, and the shape of the substrate may become unstable. That is, in the case as described above, the quality light-emitting characteristics of the light-emitting module are deteriorated. In view of this, it is desired to develop a light-emitting module having a good quality and good light-emitting characteristics, and a lighting device incorporating such a light-emitting module. The light-emitting module of the embodiment includes: a power supply pattern formed on the surface of the substrate for supplying power to the light-emitting element; and an alignment mark formed integrally with the power supply pattern. 4 201230268 Further, the light-emitting module of the other embodiment includes: a power supply pattern having a base layer formed on the surface of the substrate adjacent to the light-emitting element, and a surface layer laminated on the base layer; and an alignment mark, The power supply pattern is separately formed on the surface of the substrate as a part of the base layer. [Embodiment] Hereinafter, embodiments will be described in detail with reference to the drawings. An external view of an LED lamp 100 is shown in Fig. 1 as an example of an illumination device incorporating the light-emitting module of the embodiment. Further, Fig. 2 shows a cross-sectional view in which the lamp 1〇〇 of the figure is cut along the axis. The LED lamp 1 includes a body 102, an insulating member m, a socket 115, a lighting device 12, a lighting module 1, and a lighting cover (c〇ver) 161.
例如將燈口 115螺合於頂板上所安裝的未圖示的插座 (socket)，以照明外罩161朝下的姿勢來安裝上述lED 燈100。亦即，於圖1、圖2中，以與安裝狀態上下顛倒的 狀態來對LED燈1〇〇進行圖示。 本體102是由熱導率比較高的鋁（aluminum)形成。 如圖2所不，於本體1〇2的圖示的上端設置有模組固定台 103，該模組固定台1〇3用以安裝發光模組i。又，於上述 模組固疋台103的周圍，自本體上端一體地突出設置有圓 壤狀的外罩安裝凸部104。 又，於本體102的圖示的下端側，設置有朝圖示的上 方凹陷而成的凹部1〇5。而且’於本體1〇2的内部，形成 201230268 有沿著該本體102的軸方向延伸的通線孔106。通線孔l〇6 的圖示的上端於本體102的上端面形成開口，通線孔106 的圖示的下端於凹部105的底面形成開口。又，與通線孔 6的上端相連續地設置有槽部i〇6a，該槽部i〇6a是沿著模 組固定台103的背面，以橫向地彎折的方式而形成。 而且’於本體102的外周，一體地包括多個散熱片（fin) 107。如圖1所示’以朝本體102的上端向外側擴大的方式， 彎曲地延伸設置有上述多個散熱片107。上述多個散熱片 107設置用以將自發光模組i產生的熱釋放至LED燈1〇〇 的外部。 如圖2的剖面所示，絕緣構件lu形成為有底圓筒狀 又，絕緣構件m 一體地包括圓環狀的絕緣凸部112，言 圓環狀的絕緣凸部112於此絕緣構件U1的高度方向中p 部，自此絕緣構件111的外周面突出地設置。而且，上土 絕緣構件m是賤底壁llla與凹部1G5的底面發生名 觸，並且使絕緣凸部112卡合於凹部1〇5的開口的邊緣自 方式’容納配置於凹部105 β。亦即，絕緣構件ui的夕 表面緊密地接觸凹部105的内表面。For example, the socket 115 is screwed to a socket (not shown) mounted on the top plate, and the above-described lED lamp 100 is mounted with the illumination cover 161 facing downward. That is, in Fig. 1 and Fig. 2, the LED lamp 1A is illustrated in a state in which the mounting state is reversed. The body 102 is formed of aluminum having a relatively high thermal conductivity. As shown in FIG. 2, a module fixing station 103 is disposed at the upper end of the figure of the main body 1〇2, and the module fixing table 1〇3 is used to mount the light-emitting module i. Further, a circular outer cover mounting convex portion 104 is integrally protruded from the upper end of the main body of the module fixing base 103. Further, a concave portion 1〇5 which is recessed upward in the drawing is provided on the lower end side of the body 102 as shown. Further, inside the body 1〇2, a through hole 106 extending in the axial direction of the body 102 is formed 201230268. The upper end of the through hole 〇6 is formed with an opening at the upper end surface of the body 102, and the lower end of the through hole 106 is formed with an opening at the bottom surface of the recess 105. Further, a groove portion i6a is formed continuously around the upper end of the wire hole 6, and the groove portion i6a is formed to be laterally bent along the back surface of the mold fixing table 103. Further, a plurality of fins 107 are integrally included on the outer circumference of the body 102. As shown in Fig. 1, the plurality of fins 107 are curvedly extended so as to expand outward toward the upper end of the body 102. The plurality of fins 107 are disposed to release heat generated by the self-illuminating module i to the outside of the LED lamp 1〇〇. As shown in the cross section of FIG. 2, the insulating member lu is formed in a bottomed cylindrical shape, and the insulating member m integrally includes an annular insulating convex portion 112, and the annular insulating convex portion 112 is disposed on the insulating member U1. The p portion in the height direction is provided to protrude from the outer peripheral surface of the insulating member 111. Further, the upper earth insulating member m is a bottom surface of the bottom wall 111a and the bottom surface of the recess 1G5, and the edge of the opening in which the insulating convex portion 112 is engaged with the concave portion 1〇5 is accommodated in the concave portion 105β. That is, the outer surface of the insulating member ui closely contacts the inner surface of the recess 105.
絕緣構件⑴的比絕緣凸部U 分的圖示的下端朝圖示的下側突:： ==緣構件U1的比絕緣凸部u 本艘1〇2的凹部105内。又，於絕緣的構·^ 孔6的圖二 緣 6 201230268 如圖2所示，燈口 115具有如下的構造，即，於由絕 緣材料形成的大致圓板狀的基底116上，安裝有燈口本體 117以及孔眼（eyelet)端子118。本實施形態的燈口 115 為E26型的燈口。燈口 115是以利用基底116來將絕緣構 件111的開口予以堵塞的方式，被絕緣構件m的上述下 侧部分覆蓋地安裝。於燈口本體117中形成有螺旋槽，此 螺旋槽螺合於未圖示的電源側的插座。 如圖2所示，點燈裝置121容納配置於絕緣構件 的内侧。點燈裝置121是將變壓器（transformer)、電容器 (condenser)、以及二極體（transistor)等的電路零件123 安裝於電路基板122而形成。上述點燈裝置121電性連接 於燈口 115。圖2例示了用以將上述點燈裝置121電性連 接於燈口 115的連接構件124。該連接構件124將孔眼端 子118與電路基板122予以電性連接。 又，^燈裝置121是經由通過通線孔6 (槽部1〇6a) 的未圖示的絕緣包覆電線，電性連接於後述的發光模組 1。而且，點燈裝置121經由燈口 115而將直流電流供給至 發光模組1。 如圖1所示，照明外罩161形成為大致半球形狀。照 明外罩161是由透光性的合成樹脂形成。如圖2所示，上 述照明外罩161是以將發光模組丨的發光側予以覆蓋的方 式，嵌合且安裝於外罩安裝凸部104,此外罩安裝凸部104 自本體102的圖示的上端突出地設置。亦即，自發光模組 1發出的光經由上述照明外罩161而被用作照明光。 201230268 ' ---χ-處，具罩安裝凸部104於沿著圓周方向的多 罩字狀的安裝槽。另-方面，於照明外 槽相對應:Γ'，ΐ與外罩安裝凸部104的多個安裝 亦g 、置77別设置有未圖示的多個卡止凸部。 安裝槽，卩將外罩安裝凸部_各 以及圖）Γ 安裝於本體102。再者，如圖1 ⑹，卿明外罩161的緣部設置有遮擋環(nng) 部。遮祜椒（啊）162用以隱藏上述安裝槽與卡止凸 實施形態的發 以下，參照圖3至圖7，詳細地對第 光模組1進行說明。 、…圖3中表示自光的出射側（以下稱為表面側）來對發 光模組1進行觀察所見的平面圖，圖4中表示以圖3的線 F4_F4_來將上述發光模組1予以切斷所得的剖面圖，圖5 中表示上述發光模組1的模組基板3的平面圖，圖6中表 示將上述模組基板3的表面予以覆蓋的保護層19，圖7中 表示將上述保護層19予以包覆的狀態的模組基板3的平面 圖。 如圖3以及圖4所示，本實施形態的發光模組1包括： 模組基板3 '多個LED晶片（chip) 11 (發光元件）、框構 件15、密封構件17、以及保護層19。 如圖4的剖面所示，本實施形態的模組基板3包括如 下的構造’即，於使用有熱導率比較高的紹的底板3a的表 面積層有絕緣層3b。底板3a是由鋁或鋁合金形成。絕緣 8 201230268r 層3b是由環氧（ep0Xy)樹脂等的合成樹脂形成。絕緣層 3b的厚度遠薄於底板3a。 此外’例如可使用包含至少一層合成樹脂層的樹脂基 板、將絕緣層積層於鋁以外的金屬板而成的金屬基底基 板、以及陶瓷（ceramics)基板等作為模組基板3。 為了利用模組基板3的表面來良好地對光進行反射， 有效的疋使基板表面為白色。例如，當模組基板3為上述 樹脂基板或陶瓷基板時，使基板的材料為白色的材料即 可，當模組基板3為上述金屬基底基板時，利用白色的材 料來形成絕緣層即可。 又，如圖3所示，上述模組基板3具有大致矩形板狀 的外形，且於4個角部分別包括缺口 4。亦即，將插通於 上述4個缺口 4的未圖示的螺釘螺合於模組固定台1〇3的 未圖示的螺釘孔’藉此，上述模組基板3緊固於本體1〇2。 以上述方式來將模組基板3緊固於本體,藉此， 底板3a的背面被緊密地推壓至模組固定台1〇3的表面 103a。藉此，LED晶片11的熱易於經由底板3a而傳導至 本體102,從而可使LED晶片11的散熱性提高。 如圖5所示，於模組基板3的絕緣層3b的表面，設置 有一對供電圖案6、反射層8、以及一對供電墊（pad) 9。 反射層8是以如下的方式來發揮功能，即，使自此反射層 上所安裴的多個LED晶片11的背面側射出的能量 (energy)比較高的光，朝該光的利用方向反射，從而使 光的出射能力提高。然而，上述反射層8並非為本實施形 201230268 態所必需的構成，亦可將上述反射層8予以省略。 ，，如圖7所示，於上述模組基板3的絕緣層孙的表 面，設置有圖6所示的形狀的保護層19。該保護層19包 括使全部的反射層8、一對供電圖案6的一部分、θ以及全 部的-對供電塾9露出的多個孔，且具有將大致整個基板 表面予以覆蓋的形狀。此種保護層19例如是由網版 (screen)印刷形成。 如圖5所示，反射層8佔據著模組基板3的中央部， 且呈四角形狀地設置於絕緣層3b上，一對供電圖案6分別 配設於反射層8的附近，例如以自圖示的左右夾持著反射 層8的方式，分別配設於反射層8的兩側。一對供電圖案 6具有圖5所示的形狀。又，一對供電墊9是與一對供電 圖案6相對應地設置於絕緣層3b的表面。 圖不的左側的供電墊9是經由未圖示的導電構件而連 接於圖示的左側的正極側的供電圖案6，圖示的右侧的供 電墊9是經由未圖示的導電構件而連接於圖示的右侧的負 極侧的供電圖案6。而且，2個供電墊9經由未圖示的絕緣 包覆電線而連接於點燈裝置丨21的電路基板122。 亦即，將發光模組1與點燈裝置121予以連接的未圖 示的絕緣包覆電線是自發光模組1的2個供電塾9起延 伸’經由槽部106a而通過通線孔1〇6,連接於點燈裝置121 的電路基板122。 然而，上述形狀的一對供電圖案6、反射層8、以及一 對供電墊9是一齊圖案化（patterning)於模組基板3的絕 201230268 ί層3b的表面（以下有時亦稱為基板表面）。上述金屬圖 二6 8、9均形成為基底層a、中間層B、以及表層匸的 三層構造。基底層A的厚度比巾間層B或表層c二厚度 更厚’中間層B與表層c的厚度為大致相同的厚度。 於本實施形態中，將Cu (銅）貼合且接合於模組基板 3的絕緣層3b的整個面之後，藉由钮刻（etching)來將多 餘的部分予以除去，藉此來設置基底層A。又，將撕（錄） 電鍍至基底層A的表面上，例如進行電解電鍍，藉此來設 置中間層B °而且’將Ag (銀）電鑛至中間層B的表面 上，例如進行電解電鍍，藉此來設置表層C。 如此’由於表層C是由Ag形成，因此，供電圖案6、 反射層8、以及供電墊9的光反射率高於絕緣層3b的表面 的光反射率。作為光反射率高於絕緣層3b的光反射率的表 層C的材料，除了 Ag以外，存在金、鎳、以及鋁等。尤 其若利用銀來形成表層C，則該表層C的反射光會成為白 色系的反射光，因此較佳。又’若利用銀來形成表層C， 則可使该表層C與後述的接合線（bonding wire)之間的連 接性良好。再者，亦可利用無電解電鍍來形成表層C。 多個LED晶片η呈矩陣（matrix)狀地排列配置於 反射層8的表面。本實施形態的LED晶片η為LED (發 光一極體）的裸晶片（bare chip )，例如利用切割機（dicing cutter)’對在藍寶石（sapphire)等的半導體基板上形成有 氮化物系化合物半導體（例如氮化鎵系化合物半導體）的 半導體晶圓（wafer)進行切割，使該半導體晶圓形成為大 201230268 ———Α· 致長方體狀。 使順方向的電流流入至半導體的ρ_η接面部分，藉 此，上述LED晶片11發光。亦即，上述LED晶片11直 接將電能轉換為光。藉此，與白熾燈泡相比較，上述led 晶片11具有節能的效果’上述白熾燈泡是藉由通電而使燈 絲（filament)白熾至高溫，藉由該燈絲的熱放射而放射出 可見光。 本實施形態的LED晶片11為單面電極型的晶片，如 圖4所示’於該LED晶片Π的上表面包括2個元件電極。 為了使LED燈1〇〇例如發出白色系的光，因此，於各LED 晶片11中使用發出藍色的光的Led。 如圖4所示’為了能夠實現各LED晶片11的正下方 的反射’較佳為使用透明的聚矽氧（siHc〇ne)樹脂等的透 光性的黏晶（die bond)材料12，將上述各[ED晶片11 的半導體基板的背面黏著©定於反射層8的表層C上。 上述多個LED晶片U縱橫地排列且安裝於反射層8 的表面。而且’以將反射層8的圖示的左右兩侧所配置的 一對供電圖案6予以連結的方式，藉由接合線13 (13a、 13b)來對;^列（圖4中僅例示了丄列）的多個led晶片 11進行串聯連接。 個1曰曰曰片列中’在該列的延伸方向上彼此相鄰接的 2個LEI^晶片n的極性不同的元件電極彼此，亦即，一 個LED曰曰# 11的正極側的元件電極、與另-個LED晶片 的負極側的元件電極是由包含Au製的細線的接合線13 12 201230268 — —— 來連接。藉此，各個晶片列所具有的多個LED晶片U被 電性地串聯連接。 而且，經由端部接合線13a、13b，將各列的兩端的 LED晶片n連接於供電圖案6。上述端部接合線Ua、i3b 亦為Au製的金屬細線，因此，熱難以傳導。因此，各列 的兩k的LED晶片Π的熱難以於端部接合線13a、丨3b中 傳導而朝供電圖案6移動（散逸）。藉此，可使反射層8 的各部分中的溫度分布均一，從而可抑制搭載於反射層8 的多個LED晶片Η的溫度差。 一又，如上所述，各列的LED晶片11分別經由端部接 合線13a、13b而並聯地連接於供電圖案6。因此，即便多 個晶片列中的任一列的LED晶片u因接合（b〇nding)不 良等而無法發光，亦不會使整個發光模組1無法發光。 此外，發光模組1包括：框構件15，將對多個led 晶片11進行密封的密封區域予以包圍；以及密封構件17, 填充於上述框構件15的内側的密封區域。 例如將合成樹脂以未硬化的狀態而呈矩形框狀地塗佈 f絕緣層3b上’接著進行硬化處理，將框構件ls黏著固 2於，，基板3的表面。使用白色的聚石夕氧樹脂作為上述 ’藉此，可使細反射率提高，上述白色的聚石夕 氧f脂混入有由無機材料形成的填料（filler)。再者，填料 有氧化鈦或氧化矽等。 、 上述框構件15具有將全部的LED晶片11予以包圍的 大】上述框構件丨5將整個反射層8、以及供電圖案6的 13 201230268 -部分予以包圍。亦即，上述框構件 密封構件17的密封區域的大小。 ^ 了填充 LED更ST了言，如圖4所示’框構件15具有將全部的 二:日丄 接合線13、以及全部的端部接合線 13a、1外予以包圍的大小。而且，框構件㈣厚度線 框構件自基板表面突出的突出高度被設定為如下 是能_由_冓件17來麟上述全部的構= 要素U、13、13a、13b的高度。再者，填充 Π的密封區域的大小相當於框構件15的内側的 下’將該面積稱為密封面積）。 密封構件17填充於框構件15的内側，將一對供電圖 案6、反射層8、多個LED晶片n、多根接合線13 了以及 多根端部接合線13a、13b予以掩埋。上述密封構件17是 由例如透明聚矽氧樹脂製成。再者，密封構件17是於未^ 化的狀態下，以規定量被注入至框構件15的内側的密封區 域，然後’經加熱而硬化。 °° 於畨封構件17中，混合有適量的未圖示的鸯光體。該 螢光體會被LED晶片11所發出的光激發，從而放射出= 色與LED晶片11所發出的光的顏色不同的光。於LED晶 片Π發出藍色光的本實施形態中，為了能夠射出白色光， 使用黃色螢光體來作為螢光體，該黃色螢光體放射出與藍 色的光存在補色關係的黃色系的光。如此，由於現合有勞 光體的密封構件17的螢光體發光，因此，框構件15的内 側的整個密封構件17作為發光模組1的發光部而發揮功 201230268 月& 將上述構造的發光模組1裝入至LED燈100，經由點 燈裝置121麵電之後’密封構件17所覆蓋❹個LEd 晶片11會一齊發出藍色光，混入至密封構件17的黃色螢 光體被激發而發出黃色光。亦即，密封構件17作為面狀光 =能，該面狀光源射出藍色光與黃色光混合'而成 此時反射層8作為散熱器（heatSprea(jer)而發揮功 :’並且作為反射鏡而發揮魏，上職鮮使多個咖 曰曰片11所產生的熱擴散，上述反射鏡對各led晶片u ^射出的光中的朝向模組基板3的紐行反射。又 密封區域内的供電圖案6亦與反射層8同樣地，作為散哉 器而發揮功能，並且亦作為反射鏡而發揮功能。 ’’、、 亦即’來自各LED晶# u的熱經由反射層8、模組 =反3、模組㈣台1G3、本體1()2的上表面、以教 Η)?而朝，㈣〇的外部散熱。又，被反射層8反射^ i古封構件17擴散且被供電圖案6反射的光，是 紐17放出社要的光—併經由照明外ΐ 161而被用作照明光。 早 驟。，二製造上述發光模組1時，經由若干個檢查步 中，利用未圖對晶片Π的安裝不良進行檢查的步驟The lower end of the insulating member (1) than the insulating convex portion U is projected toward the lower side of the figure: == The inner edge of the insulating member u1 of the edge member U1 is in the recess 105 of the ship 1〇2. Further, in the case of the insulating structure, the second edge 6 201230268, as shown in Fig. 2, the socket 115 has a structure in which a lamp is mounted on a substantially disk-shaped base 116 formed of an insulating material. The mouth body 117 and the eyelet terminal 118. The base 115 of the present embodiment is an E26 type lamp socket. The base 115 is attached to the lower side portion of the insulating member m so as to block the opening of the insulating member 111 by the base 116. A spiral groove is formed in the socket body 117, and the spiral groove is screwed to a socket on the power supply side (not shown). As shown in Fig. 2, the lighting device 121 is housed inside the insulating member. The lighting device 121 is formed by mounting a circuit component 123 such as a transformer, a capacitor, and a transistor on the circuit board 122. The above lighting device 121 is electrically connected to the lamp opening 115. Fig. 2 illustrates a connecting member 124 for electrically connecting the above lighting device 121 to the socket 115. The connecting member 124 electrically connects the eyelet terminal 118 and the circuit substrate 122. Further, the lamp unit 121 is electrically connected to the light-emitting module 1 to be described later via an insulated electric wire (not shown) that passes through the through hole 6 (groove portion 1〇6a). Further, the lighting device 121 supplies a direct current to the light-emitting module 1 via the lamp opening 115. As shown in FIG. 1, the illumination cover 161 is formed in a substantially hemispherical shape. The illumination cover 161 is formed of a translucent synthetic resin. As shown in FIG. 2, the illumination cover 161 is fitted and attached to the cover attachment convex portion 104 so as to cover the light-emitting side of the light-emitting module, and the cover attachment convex portion 104 is shown from the upper end of the body 102. Prominently set. That is, the light emitted from the light-emitting module 1 is used as illumination light via the illumination cover 161. 201230268 ' ---χ-, with the cover mounting projections 104 in a plurality of cover-shaped mounting grooves along the circumferential direction. On the other hand, in the illumination outer groove: Γ', a plurality of attachments ΐ and the cover mounting projections 104 are provided, and a plurality of locking projections (not shown) are provided. The mounting groove is attached to the body 102 by the cover mounting projections _ and FIG. Further, as shown in Fig. 1 (6), a shielding ring (nng) portion is provided at the edge of the outer casing 161. The concealer (ah) 162 is used to hide the mounting groove and the locking projection. Hereinafter, the optical module 1 will be described in detail with reference to Figs. 3 to 7 . 3 is a plan view showing the light-emitting module 1 from the light-emitting side (hereinafter referred to as the front side), and FIG. 4 is a view showing the light-emitting module 1 cut by the line F4_F4_ of FIG. FIG. 5 is a plan view showing the module substrate 3 of the light-emitting module 1, and FIG. 6 is a protective layer 19 covering the surface of the module substrate 3, and FIG. 7 is a view showing the protective layer. 19 is a plan view of the module substrate 3 in a state of being covered. As shown in Figs. 3 and 4, the light-emitting module 1 of the present embodiment includes a module substrate 3' of a plurality of LED chips 11 (light-emitting elements), a frame member 15, a sealing member 17, and a protective layer 19. As shown in the cross section of Fig. 4, the module substrate 3 of the present embodiment includes the following structure, i.e., the insulating layer 3b is formed on the surface of the bottom plate 3a having a relatively high thermal conductivity. The bottom plate 3a is formed of aluminum or an aluminum alloy. Insulation 8 201230268r The layer 3b is formed of a synthetic resin such as epoxy (ep0Xy) resin. The thickness of the insulating layer 3b is much thinner than the bottom plate 3a. Further, for example, a resin substrate including at least one synthetic resin layer, a metal base substrate in which an insulating layer is laminated on a metal plate other than aluminum, and a ceramics substrate can be used as the module substrate 3. In order to reflect light well by the surface of the module substrate 3, the surface of the substrate is effectively whitened. For example, when the module substrate 3 is the resin substrate or the ceramic substrate, the material of the substrate may be a white material. When the module substrate 3 is the metal base substrate, the insulating layer may be formed of a white material. Further, as shown in Fig. 3, the module substrate 3 has an outer shape of a substantially rectangular plate shape, and includes notches 4 at four corner portions. In other words, a screw (not shown) that is inserted into the four notches 4 is screwed to a screw hole (not shown) of the module fixing base 1〇3, whereby the module substrate 3 is fastened to the main body 1〇. 2. The module substrate 3 is fastened to the body in the above manner, whereby the back surface of the bottom plate 3a is tightly pressed to the surface 103a of the module fixing table 1A3. Thereby, the heat of the LED wafer 11 is easily conducted to the body 102 via the bottom plate 3a, so that the heat dissipation of the LED wafer 11 can be improved. As shown in Fig. 5, a pair of power supply patterns 6, a reflection layer 8, and a pair of power supply pads 9 are provided on the surface of the insulating layer 3b of the module substrate 3. The reflective layer 8 functions to reflect light having a relatively high energy emitted from the back side of the plurality of LED chips 11 mounted on the reflective layer in the direction in which the light is used. , thereby increasing the ability of light to exit. However, the above-mentioned reflective layer 8 is not necessarily required in the form of the embodiment 201230268, and the reflective layer 8 may be omitted. As shown in Fig. 7, a protective layer 19 having the shape shown in Fig. 6 is provided on the surface of the insulating layer of the module substrate 3. The protective layer 19 includes a plurality of holes for exposing all of the reflective layer 8, a part of the pair of power supply patterns 6, θ, and all of the power supply ports 9, and has a shape that covers substantially the entire substrate surface. Such a protective layer 19 is formed, for example, by screen printing. As shown in FIG. 5, the reflective layer 8 occupies the central portion of the module substrate 3, and is disposed on the insulating layer 3b in a quadrangular shape, and the pair of power supply patterns 6 are respectively disposed in the vicinity of the reflective layer 8, for example, as shown in FIG. The manner in which the reflective layer 8 is sandwiched between the left and right sides is disposed on both sides of the reflective layer 8. The pair of power supply patterns 6 have the shape shown in Fig. 5. Further, a pair of power supply pads 9 are provided on the surface of the insulating layer 3b in correspondence with the pair of power supply patterns 6. The power supply pad 9 on the left side of the drawing is connected to the power supply pattern 6 on the positive side of the left side via a conductive member (not shown), and the power supply pad 9 on the right side of the figure is connected via a conductive member (not shown). The power supply pattern 6 on the negative side of the right side of the figure. Further, the two power supply pads 9 are connected to the circuit board 122 of the lighting device 21 via an insulated electric wire (not shown). In other words, the insulated covered electric wire (not shown) that connects the light-emitting module 1 and the lighting device 121 extends from the two power supply ports 9 of the light-emitting module 1 through the through-holes 1 through the groove portion 106a. 6. The circuit board 122 is connected to the lighting device 121. However, the pair of power supply patterns 6, the reflective layer 8, and the pair of power supply pads 9 of the above-described shape are patterned on the surface of the layer 3b of the module substrate 3 (hereinafter sometimes referred to as a substrate surface). ). The above metal diagrams 268 and 9 are each formed into a three-layer structure of the base layer a, the intermediate layer B, and the surface layer 匸. The thickness of the base layer A is thicker than the thickness of the inter-sheet layer B or the surface layer c. The thickness of the intermediate layer B and the surface layer c is substantially the same. In the present embodiment, after Cu (copper) is bonded and bonded to the entire surface of the insulating layer 3b of the module substrate 3, excess portions are removed by etching, thereby providing a base layer. A. Further, the tearing (recording) is electroplated onto the surface of the base layer A, for example, electrolytic plating, whereby the intermediate layer B° is set and 'Ag (silver) is electro-elected onto the surface of the intermediate layer B, for example, electrolytic plating is performed. To set the surface layer C. Thus, since the surface layer C is formed of Ag, the light reflectance of the power supply pattern 6, the reflective layer 8, and the power supply pad 9 is higher than the light reflectance of the surface of the insulating layer 3b. As the material of the surface layer C having a light reflectance higher than that of the insulating layer 3b, in addition to Ag, gold, nickel, aluminum, or the like is present. In particular, if the surface layer C is formed by using silver, the reflected light of the surface layer C becomes white reflected light, which is preferable. Further, when the surface layer C is formed of silver, the connection between the surface layer C and a bonding wire to be described later can be made good. Further, the surface layer C may be formed by electroless plating. The plurality of LED chips n are arranged in a matrix shape on the surface of the reflective layer 8. The LED chip η of the present embodiment is a bare chip of an LED (light-emitting one), and a nitride-based compound semiconductor is formed on a semiconductor substrate such as sapphire by, for example, a dicing cutter. A semiconductor wafer (for example, a gallium nitride-based compound semiconductor) is diced, and the semiconductor wafer is formed into a large rectangular shape of 201230268. The current in the forward direction flows into the ρ_η junction portion of the semiconductor, whereby the LED chip 11 emits light. That is, the above LED chip 11 directly converts electric energy into light. Thereby, the above-mentioned LED wafer 11 has an energy-saving effect as compared with an incandescent light bulb. The above-mentioned incandescent light bulb is made of a filament which is incandescent to a high temperature by energization, and emits visible light by heat radiation of the filament. The LED wafer 11 of the present embodiment is a single-sided electrode type wafer, as shown in Fig. 4, and includes two element electrodes on the upper surface of the LED wafer cassette. In order to cause the LED lamp 1 to emit white light, for example, Led which emits blue light is used for each of the LED chips 11. As shown in FIG. 4, in order to enable reflection of directly under each LED wafer 11, it is preferable to use a light-transmitting die bond material 12 such as a transparent polysilicon oxide (siHc) resin. The back surface adhesion of the semiconductor substrate of each of the above [ED wafers 11] is set on the surface layer C of the reflective layer 8. The plurality of LED chips U are arranged vertically and horizontally and mounted on the surface of the reflective layer 8. Further, 'the pair of power supply patterns 6 arranged on the left and right sides of the illustration of the reflective layer 8 are connected by the bonding wires 13 (13a, 13b); the column (only exemplified in Fig. 4) The plurality of led wafers 11 of the column are connected in series. The element electrodes of the two LEI^ wafers n which are adjacent to each other in the extending direction of the column are in the one-chip row, that is, the element electrodes on the positive side of one LED 曰曰 #11 The element electrodes on the negative electrode side of the other LED chip are connected by a bonding wire 13 12 201230268 — which includes a thin wire made of Au. Thereby, the plurality of LED chips U included in each of the wafer rows are electrically connected in series. Further, the LED chips n at both ends of each column are connected to the power supply pattern 6 via the end bonding wires 13a and 13b. Since the end joint wires Ua and i3b are also metal thin wires made of Au, heat is hard to conduct. Therefore, the heat of the two-k LED chip turns of each column is hard to be conducted in the end bonding wires 13a and 3b and is moved (dissipated) toward the power supply pattern 6. Thereby, the temperature distribution in each portion of the reflective layer 8 can be made uniform, and the temperature difference of the plurality of LED wafers mounted on the reflective layer 8 can be suppressed. Further, as described above, the LED chips 11 of the respective columns are connected in parallel to the power supply pattern 6 via the end portion bonding wires 13a, 13b, respectively. Therefore, even if the LED chips u in any one of the plurality of wafer rows fail to emit light due to poor bonding or the like, the entire light-emitting module 1 is not prevented from emitting light. Further, the light-emitting module 1 includes a frame member 15 that surrounds a sealing region that seals the plurality of LED wafers 11, and a sealing member 17 that is filled in a sealing region inside the frame member 15. For example, the synthetic resin is applied to the f-insulating layer 3b in a rectangular frame shape in an uncured state, followed by a hardening treatment, and the frame member ls is adhered to the surface of the substrate 3. By using a white polysulfide resin as the above, the fine reflectance can be improved, and the white polysulfide f fat is mixed with a filler formed of an inorganic material. Further, the filler is titanium oxide or cerium oxide. The frame member 15 has a large size in which all of the LED chips 11 are surrounded. The frame member 丨 5 surrounds the entire reflective layer 8 and the 13 201230268 - portion of the power supply pattern 6 . That is, the size of the sealing region of the frame member sealing member 17 described above. ^ The filling LED is further ST. As shown in Fig. 4, the frame member 15 has a size in which all of the two: Japanese bonding wires 13 and all the end bonding wires 13a and 1 are surrounded. Further, the height of the projection of the frame member (four) thickness wire frame member from the surface of the substrate is set as follows: the height of all of the above-described components = elements U, 13, 13a, 13b can be obtained by the 冓 member 17. Further, the size of the sealing region filled with the crucible corresponds to the lower side of the inside of the frame member 15 and the area is referred to as the sealing area. The sealing member 17 is filled inside the frame member 15, and a pair of power supply patterns 6, a reflection layer 8, a plurality of LED chips n, a plurality of bonding wires 13, and a plurality of end bonding wires 13a, 13b are buried. The above sealing member 17 is made of, for example, a transparent polyoxymethylene resin. Further, the sealing member 17 is injected into the sealing region inside the frame member 15 in a predetermined amount in an untreated state, and then hardened by heating. °° An appropriate amount of a phosphor (not shown) is mixed in the crucible sealing member 17. The phosphor is excited by the light emitted from the LED chip 11, thereby emitting light having a color different from that of the light emitted from the LED wafer 11. In the embodiment in which the LED chip emits blue light, in order to emit white light, a yellow phosphor is used as the phosphor, and the yellow phosphor emits yellow light having a complementary color relationship with the blue light. . In this way, since the phosphor of the sealing member 17 that is currently equipped with the luminous body emits light, the entire sealing member 17 inside the frame member 15 functions as a light-emitting portion of the light-emitting module 1 201230268 & The module 1 is loaded into the LED lamp 100, and after the surface of the lighting device 121 is turned on, the LED wafer 11 covered by the sealing member 17 emits blue light, and the yellow phosphor mixed into the sealing member 17 is excited to emit yellow. Light. That is, the sealing member 17 functions as a planar light=energy, and the planar light source emits blue light and yellow light. The reflective layer 8 functions as a heat sink (heater(jer) at this time: 'and acts as a mirror The Wei, the upper job, causes the heat generated by the plurality of curry sheets 11 to be reflected by the mirrors, and the mirrors reflect the light toward the module substrate 3 among the light emitted from the LED chips. Similarly to the reflective layer 8, the pattern 6 functions as a diffuser and also functions as a mirror. '', that is, 'heat from each LED crystal #u via the reflective layer 8, module= Reverse 3, module (4) 1G3, the upper surface of the body 1 () 2, to teach), and (4) the external heat dissipation. Further, the light reflected by the reflective layer 8 and diffused by the power supply pattern 6 is the light that the neon 17 emits, and is used as the illumination light via the illumination outer 161. Early. When the light-emitting module 1 is manufactured, the steps of inspecting the defective mounting of the wafer cassette are not performed through a plurality of inspection steps.
Device，cCDT Γ ^ ^ ^ ^ ( ^Device,cCDT Γ ^ ^ ^ ^ ( ^
Dev1Ce CCD)感測器（se醜） 的對準標輯行檢測，從而於心U料光模組1 而確疋女裝不良的部位。上述對 15 201230268 準標記亦使用於其他步驟。因此，於本實施形態中，在模 組基板3的表面，設置有與供電圖案6成一體的對準標記。 如圖3-圖5、圖7所示，一對供電圖案6包括一^細 長的電極部分6a，此一對細長的電極部分6a是沿著安裝 有多個LED晶片11的反射層8的彼此相對向的2條邊而 分別接近地配置。換言之，一對電極圖案6的2個電極部 分6a分別設置於失持著反射層8的位置。 各電極部分6a分別包括：沿著反射層8的2條邊的接 合部分6b與多個突起部分6c。接合部分6b是經由端部接 合線13a、13b，連接著多個LED晶片u的處於各晶片列 的兩端的晶片的元件電極。因此，接合部分6b是沿著反射 層8的相對向的邊，細長延伸地設置。 多個突起部分&是與LED晶片11的晶片列相對應地 設置’且自各接合部分6b的遠離反射層8的第1端邊61 朝外側突出。各突起部分6c自端邊61突出的突出長度， 被β又计為比接合部分6b的寬度更窄。又，各突起部分& 的寬度亦被設計為比接合部分6b的寬度更窄。此外，多個 突起部分6c例如以〇.5 mm左右的固定的間距（pitch)， 沿著端邊61而突出設置。而且，上述多個突起部分& 為對準標記而發揮功能。 另一方面’各接合部分6b的接近於反射層8的第2 端邊62是與反射層8的相對向的筆直的邊大致平行地隔 開極小的間隙而相對向，且呈直線狀。換言之，於本實施 形態中，在上述第2端邊62上，並未設置有相當於對準^ 16 201230268 陷。如此’不在與反射層8相對向的端邊62 二記，藉此，可使端邊62接近於反射層8，從 口使上述端部接合線Ua、Ub的長度縮短。 料進述’根據本實施形態，自接合部分6b突出設置 、> *屺（多個突起部分6c)且與供電圖案6 體， 因=，當藉由電解電鍍來形成包含對準標記的供電圖案6 =層C時’不會產生電鍍不均，可抑制對準標記的錯誤 識別。 亦即，作為對準標記而發揮功能的突起部分6c並未與 ^電圖案6分離，因此，鮮突起部分6e比接合部分6b '、、仍可使電解電鑛中流動的電流的密度相同，從而可 ^止電鍍不均。藉此，可確實地檢測對準標記，從而可製 造出品質高且具有良好的發光特性的發光模組i。 立又，根據本實施形態，由於使多個突起部分6c與接合 P刀6b成為一體，因此，即便當將非常大的直流電流施加 於LED晶片11時，亦不會於突起部分6c與接合部分6b 之間產生放電，從而可防止因上述放電而導致LED晶片 11受破壞的故障。 又’根據本實施形態，由於使多個突起部分6c與接合 邛分6b成為一體，因此，當對包含上述部分6b、6c的金 屬圖案進行電鍍時，可使導線（lead)的根數減少。具體 而吕，根據本實施形態，如圖5所示，導線L的根數為5 根即可。然而’當使突起部分6c與接合部分6b分離而分 別進行電鍍時，導線L的根數會增加2根。 17 201230268 如此若用於電鍍的導線L的根數增加，則難以對電 /二氆度進行5周整，連接於導線L的配線的拉伸亦變得繁 瑣亦P於上述情形時，難以穩定地進行電鍵處理，亦 會引起電鍍不均。 而且，根據本實施形態，由於使多個突起部分6c與接 合部分6b成為一體，因此’與使兩者分開的情形相比較， 可使直至對準標記（突起部分6c)與模組基板3的邊緣為 止的距離變長’從而可獲得沿面距離（creeping distance )。 換個觀點’可確保充分的沿面距離，而且可使模組基板3 的尺寸（size)變小，從而可使發光模組i實現小型化。 再者，多個突起部分6c的個數、寬度、突出長度、間 距、大小、以及形狀等可進行各種變更。換言之，可任意 地將對準標記的形狀或大小予以變更。 “ 例如，圖8中表示上述第丨實施形態的發光模組工的 對準標記的一個變形例。於圖8中，對以與上述第丨實施 形態相同的方式來發揮功能的構成要素附上相同的符號。 上述變形例的對準標記亦設置於供電圖案6的電極部 分6a’的遠離反射層8的第i端邊61，。於上述變形例中， 代替多個突起部分6c，將多個缺口 6c'設置於第1端邊61，。 因此，電極部分6a，的寬度大於第1實施形態的電極部 分6a的寬度。而且，自電極部分6a，的第i端邊61，凹陷而 成的多個缺口 6c’的底與第2端邊62之間的接合部分沾, 的寬度W，被設計為與第丨實施形態的供電圖案6的電極 部分6a的接合部分6b的寬度大致相同的寬度。 18 201230268 --χ-」 、接著’參照圖9至圖13來對第2實施形態的發光模組 20進^丁說明。再者，於以下的說明中，對以與上述第i實 施形態的發絲組丨姉的方式來發揮魏的構成要素二 上相同的符號，且省略其詳細的說明。 ，圖9中表示自表面側來對發光模、组2〇進行觀察所見的 平面圖’圖10中表示以圖9的線^仰⑺來將上述發光模 組20予以切斷所得的剖關，圖u中表示上述發光模組 20的模組基板3的平面S’圖12 t表示將上述模組基板〕 的表面予以覆蓋的賴層19，圖13巾表示將上述保護層 9予以包覆的狀態的模組基板3的平面圖。 本實施形態的發光模組2 〇包括與供電 組對準標錢、18。-對“對準標記16是分^= —對供電圖案6的各電極部分6a的遠離反射層㈣端邊地 ，置。又’ 一對第2對準標記18配置於比各第^對準標記 16更靠外侧處。 古如圖11所示’一對第1對準標記16分別-體地包括： 产線部’與電極部分Q大致平行地延伸；以及多個支線部 ，，沿著上述直線部的長度方向而等間隔地設置。上述直 ，部以及支線部16a比電極部分6a更細。多個支線部⑹ 二直線部正父’且與反射層8的表面所安裝的多個 LED晶 片11的晶片列相對應地設置。 又’ -對第2對準標記18亦分別包括：直線部，斑電 極部分6a大致平行地延伸；以及多個支線部⑽，盘上述 直線部設置為-體。上述直線部以及支線部咖亦/比 19 201230268 °P I Γ更細。又，上述多個支線部18a亦與直線部正交， 且與晶片列相對應地設置。 亦即’第2對準標記18以與第1對準標記16的支線 :心相同的間距’等間隔地包括多個支線部18a。而且， 1對準標記16的支線部16a與第2對準標記18的支線 =18a彼此錯開1/2間距而配置為巢套狀。因此，支線部 a 18a疋以1/2的間距而等間隔地配置。 哲如此，與供電圖案6分開地形成第1對準標記16以及 隹2對準標記18 ’因此，該第1對準標記16以及第2對 準標記18的形狀、大小、形成位置等的設計自由度高。因 此二例如亦可於第丨對準標記16以及第2對準標記Μ的 :端’將該第1對準標記16以及第2對準標記18予以連 =而為了獲得與模組基板3的周緣部相距的沿面距 —’較為理想的是儘可能靠近反射層8地形成第！對準標 5己16以及第2對準標記。 你成然:’上述第1對準標記16以及第2對準標記18是 電圖案6、反射層8、以及—對供電墊9的基底 曰A的一 μ而形成。換言之，當將模組 時的表：形成的金屬圖案6、"的基底層八= H，-併形成本實施形態的對準標記16、18。亦即，上 述第1對準標記16以及第2對準標記 6、8、9不同，不包括中間層8以及表層；^了他金屬圖案 具體而言’於模組基板3的*而拟士 由侧來形成供電_的基底層 201230268 A、供電墊9的基底層A、第1對準標記i6 然後’藉由電解電物成供電圖案6= 層B、反射層8的中問展只、 的中間 _，藉由電解電鎪來;成供==中^^ =表層C、以及供電墊9的表層 曰=層 心以及第2對準標記18並 =對準標 且比其他金屬圖案6、8、9更薄Τ㈣Β以及表層C， 可、、肖ίΐΙΪ，仙編層切柄準標記16、18，~ 二準標記的錯誤識別，從； :本：形態’由於原本不：：二：:準二:’根 18 ’因此，亦不會產生讀不均。 己16、 又’於本實施形態中，如 18被框構件21 |蓋，該框構件2不」=對準標記16、 之’於本實施形態中，框構件 、疋了密封區域。換言 18予以覆蓋的方將2崎準標記16、 如此，利用框構件21來將對二：表面。 藉此，可抑制對準標記16、182 = ^8予以覆蓋， 的f生’從而可抑制對準標記Ι6Γ18 =接觸’可抑制鏽 對準標記16、18形成於 j化。或者亦可將 ί6、18亦被密封構件17密封，^而於^情形時’對準標記 然而，與利用密封盖 可抑制鏽的產生。 實施形態般，利用框構件21來將相比較，如第2 蓋，則更有利。亦即，本實施形態的16、18予以覆 〜扪對準標記16、18僅包 21 201230268 含銅的基底層A’因此’光的反射率低，若此種對準標記 16、18存在於密封區域中，則光足會相應地減少。又，框 構件21包含用以實現白色化的填料，因此，與不包含填料 的密封構件17相比較’易於使空氣中的硫氣成分透過，從 而可相應地抑制對準標記16、18的劣化。 如上所述，根據本實施形態，將2組對準標記16、18 形成於模組基板3，但例如當安裝個數比較少（例如約一 半）的LED晶片11時，亦可僅形成第1對準標記μ。支 線部16a的間距為餘刻精度的極限，因此，一般認為〇 5 mm 為最小間距。因此，當以比上述間距更狹窄的間距來高密 度地安裝LED晶片11時，例如，如第2實施形態般，除 了形成第1對準標記16之外，亦形成第2對準標記18即 可。 換言之，根據本實施形態，可使用LED晶片11的安 裝數比較少的發光模組與LED晶片11的安裝數倍增的發 光模組的模組基板3作為共用零件，可容易地對零件進行 保管、管理，從而可相應她削減發光模組的製造成本 (cost)。 上述貫加形態疋作為例子而被提示，並無對發明的範 圍進行限定的意圖。能夠以其他各種形態來實施上述實施 形態，於不脫離發明的宗旨的範圍内，可進行各種省略、 替換、以及變更。上述實施形態或其變形包含於發明的範 圍或宗旨，且同樣地包含於申請專利範圍所揭示的發明及 其均等的範圍。 22 201230268r -----JT -1 【圖式簡單說明】 圖1是實施形態的LED燈的外觀立體示意圖。 圖2是沿著軸線來將圖丨的1^]〇燈予以 面圖。 ㉝所侍的剖 圖3是自光的出射侧來對裝入至圖丨的^£1)燈 實施形態的發光模組進行觀察所見的平面圖。 、1 圖4是以線F4-F4來將圖3的發光模組予以切 的剖面圖。 1侍 圖5是表示圖3的發光模組的模組基板的平面圖。 圖6是表示將圖5的模組基板予以包覆的保護層的平 圖7是將圖6的保護層設置於圖5的模組基板的狀熊 的平面圖。 "" 圖8是圖3的發光模組的對準標記的變形例的部分放 大示意圖。 圖9是自光的出射側來對裝入至圖i的1^;〇燈的第2 實施形態的發光模組進行觀察所見的平面圖。 圖10疋以線F10-F10來將圖9的發光模組予以切斷所 得的剖面圖。 圖11是圖9的發光模組的模組基板的平面示意圖。 圖12是將圖11的模組基板予以包覆的保護層的平面 示意圖。 圖13是將圖12的保護層設置於圖u的模組基板的狀 態的平面圖。 23 201230268 【主要元件符號說明】 1、20 :發行模組 3:模組基板 3a :底板 3b :絕緣層 4、6c’ ：缺口 6 :供電圖案/金屬圖案 6a、6a':電極部分 6b、6W :接合部分 6c :突起部分 8 :反射層/金屬圖案 9 :供電墊/金屬圖案 11 : LED晶片/構成要素 12 _黏晶材料 13 :接合線/構成要素 13a、13b :端部接合線/構成要素 15、 21 :框構件 16、 18 :對準標記 16a、18a :支線部 Π:密封構件 19 :保護層 61 :第1端邊/端邊 61’ ：第1端邊 62 :第2端邊/端邊 24 201230268 100 : LED 燈 102 :本體 103 :模組固定台 103a :表面 104 :外罩安裝凸部 105 :凹部 106 :通線孔 106a :槽部 107 :散熱片 111 :絕緣構件 111a :底壁 112 :絕緣凸部 114 :通孔 115 :燈口 116 :基底 117 :燈口本體 118 :孔眼端子 121 :點燈裝置 122 :電路基板 123 :電路零件 124 :連接構件 161 :照明外罩 162 :遮擋環 A :基底層 25 201230268 B :中間層 C :表層 F4-F4、F10-F10 :線 L :導線 W :寬度 26The Dev1Ce CCD) sensor (se ugly) is aligned with the standard line detection, so that the heart material module 1 is used to confirm the bad parts of the woman. The above-mentioned pair 15 201230268 standard mark is also used in other steps. Therefore, in the present embodiment, an alignment mark integrated with the power supply pattern 6 is provided on the surface of the module substrate 3. As shown in FIGS. 3 to 5 and 7, a pair of power supply patterns 6 includes an elongated electrode portion 6a which is along the reflection layer 8 on which the plurality of LED chips 11 are mounted. The two sides facing each other are arranged close to each other. In other words, the two electrode portions 6a of the pair of electrode patterns 6 are respectively disposed at positions where the reflective layer 8 is lost. Each of the electrode portions 6a includes a joint portion 6b and a plurality of projecting portions 6c along the two sides of the reflective layer 8, respectively. The joint portion 6b is an element electrode of a wafer which is connected to both ends of each wafer row of the plurality of LED wafers u via the end portion bonding wires 13a and 13b. Therefore, the engaging portion 6b is provided along the opposite sides of the reflective layer 8, elongatedly extending. The plurality of protrusion portions & are disposed corresponding to the wafer row of the LED wafer 11 and protrude outward from the first end side 61 of each of the joint portions 6b remote from the reflection layer 8. The protruding length of each of the protruding portions 6c protruding from the end side 61 is further narrower than β by the width of the engaging portion 6b. Further, the width of each of the protruding portions & is also designed to be narrower than the width of the engaging portion 6b. Further, the plurality of protruding portions 6c are protruded along the end side 61, for example, at a fixed pitch of about 0.5 mm. Further, the plurality of protrusion portions & functions as alignment marks. On the other hand, the second end side 62 of each of the joint portions 6b which is close to the reflection layer 8 is opposed to the straight side of the reflection layer 8 so as to be substantially parallel to each other, and is linearly opposed. In other words, in the present embodiment, the second end 62 is not provided with an alignment corresponding to 16 1630268. Thus, the end edge 62 opposed to the reflecting layer 8 is not doubled, whereby the end edge 62 can be brought close to the reflecting layer 8, and the length of the end joining wires Ua, Ub can be shortened from the opening. According to the present embodiment, the self-joining portion 6b is protruded from the joint portion 6b, and * 屺 (the plurality of protruding portions 6c) and the power supply pattern 6 body, because =, when the power supply including the alignment mark is formed by electrolytic plating Pattern 6 = Layer C 'Does not cause uneven plating, which can suppress misidentification of alignment marks. That is, the protruding portion 6c functioning as the alignment mark is not separated from the electro-chemical pattern 6, and therefore, the fresh protruding portion 6e can still have the same density of the current flowing in the electrolytic ore as compared with the bonding portion 6b'. Therefore, uneven plating can be prevented. Thereby, the alignment mark can be surely detected, whereby the light-emitting module i having high quality and good light-emitting characteristics can be manufactured. Further, according to the present embodiment, since the plurality of protruding portions 6c and the bonding P blade 6b are integrated, even when a very large direct current is applied to the LED wafer 11, the protruding portion 6c and the joint portion are not formed. A discharge is generated between 6b, thereby preventing malfunction of the LED wafer 11 from being damaged due to the above discharge. Further, according to the present embodiment, since the plurality of protruding portions 6c and the joining portion 6b are integrated, when the metal pattern including the portions 6b and 6c is plated, the number of the lead wires can be reduced. Specifically, according to the present embodiment, as shown in Fig. 5, the number of the wires L may be five. However, when the projection portion 6c is separated from the joint portion 6b and plated separately, the number of the wires L is increased by two. 17 201230268 If the number of wires L used for electroplating increases, it is difficult to carry out the electric/twisting degree for 5 weeks, and the stretching of the wires connected to the wires L becomes complicated. In the above case, it is difficult to stabilize. Conducting the key treatment also causes uneven plating. Further, according to the present embodiment, since the plurality of projecting portions 6c and the joint portion 6b are integrated, "the alignment mark (the projecting portion 6c) and the module substrate 3 can be made as compared with the case of separating the two. The distance from the edge becomes longer' to obtain a creeping distance. In another opinion, a sufficient creeping distance can be ensured, and the size of the module substrate 3 can be made small, so that the light-emitting module i can be miniaturized. Further, the number, width, projection length, pitch, size, and shape of the plurality of protruding portions 6c can be variously changed. In other words, the shape or size of the alignment mark can be arbitrarily changed. "For example, a modification of the alignment mark of the light-emitting module worker of the above-described third embodiment is shown in Fig. 8. In Fig. 8, the components that function in the same manner as the above-described third embodiment are attached. The same reference numeral is also provided. The alignment mark of the above modification is also disposed on the ith end side 61 of the electrode portion 6a' of the power supply pattern 6 away from the reflective layer 8. In the above modification, instead of the plurality of protrusion portions 6c, The notch 6c' is provided on the first end side 61. Therefore, the width of the electrode portion 6a is larger than the width of the electrode portion 6a of the first embodiment. Further, the i-th edge 61 of the electrode portion 6a is recessed. The width W of the joint between the bottom of the plurality of notches 6c' and the second end 62 is designed to be substantially the same as the width of the joint portion 6b of the electrode portion 6a of the power supply pattern 6 of the second embodiment. The width of the light-emitting module 20 of the second embodiment will be described later with reference to Figs. 9 to 13 . In the following description, the same components as those of the hair component group of the above-described first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted. FIG. 9 is a plan view showing the light-emitting mold and the group 2〇 viewed from the front side. FIG. 10 is a cross-sectional view showing the light-emitting module 20 cut by the line (7) of FIG. The plane S' of the module substrate 3 of the light-emitting module 20 is shown in FIG. 12 t, which shows the layer 19 covering the surface of the module substrate, and FIG. 13 shows the state in which the protective layer 9 is covered. Plan view of the module substrate 3. The light-emitting module 2 of the present embodiment includes a reference numeral 18 for the power supply group. - For the "alignment mark 16 is a division ^ = - the end of each electrode portion 6a of the power supply pattern 6 away from the reflective layer (four). Further, a pair of second alignment marks 18 are arranged to be aligned with each other The mark 16 is further on the outer side. As shown in Fig. 11, the pair of first alignment marks 16 respectively include: the line portion 'extends substantially in parallel with the electrode portion Q; and a plurality of branch portions, along The straight portions are provided at equal intervals in the longitudinal direction. The straight portions and the branch portions 16a are thinner than the electrode portions 6a. The plurality of branch portions (6) are two straight portions and are mounted on the surface of the reflective layer 8 The wafer rows of the LED chips 11 are correspondingly disposed. Further, the pair of second alignment marks 18 respectively include a straight portion, the spot electrode portion 6a extends substantially in parallel, and a plurality of branch portions (10), and the straight portion of the disk is set to The linear portion and the branch portion are also thinner than 19 201230268 ° PI 。. Further, the plurality of branch portions 18a are also orthogonal to the straight portion and are provided corresponding to the wafer row. The alignment mark 18 is at the same pitch as the branch line of the first alignment mark 16: The plurality of branch portions 18a are spaced apart. Further, the branch line portion 16a of the alignment mark 16 and the branch line 18a of the second alignment mark 18 are arranged at a 1/2 pitch from each other to be nested. Therefore, the branch line portion a 18a疋 Arranged at equal intervals at a pitch of 1/2. Thus, the first alignment mark 16 and the 隹2 alignment mark 18' are formed separately from the power supply pattern 6. Therefore, the first alignment mark 16 and the second pair The design freedom of the shape, size, formation position, and the like of the alignment mark 18 is high. Therefore, for example, the first alignment mark 16 and the first alignment mark 16 and the second alignment mark : can be used. 2 the alignment mark 18 is connected = and in order to obtain the creeping distance from the peripheral edge portion of the module substrate 3 - it is preferable to form the first alignment mark 5 and the second alignment as close as possible to the reflective layer 8 Marked. You become convinced: 'The first alignment mark 16 and the second alignment mark 18 are formed by the electrical pattern 6, the reflective layer 8, and the substrate 曰A of the power supply pad 9. In other words, when Table at the time of the module: the formed metal pattern 6, the base layer of the " eight = H, - and forms this embodiment Alignment marks 16, 18, that is, the first alignment mark 16 and the second alignment mark 6, 8, 9 are different, and do not include the intermediate layer 8 and the surface layer; The base layer of the substrate 3 is formed by the side to form the power supply layer 201230268 A, the base layer A of the power supply pad 9, the first alignment mark i6, and then the power supply pattern 6 = layer B, reflective layer 8 of the middle of the exhibition, the middle _, by electrolytic electricity; into the supply == medium ^ ^ = surface layer C, and the surface of the power supply pad 9 层 = layer core and the second alignment mark 18 and = alignment It is thinner than other metal patterns 6, 8, and 9 (four) Β and surface layer C, can,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, Since the original is not:: 2:: 2: 'root 18', therefore, there will be no uneven reading. In the present embodiment, the frame member 2 is not covered by the frame member 21, and the frame member 2 is not aligned with the alignment mark 16, and in the present embodiment, the frame member is sealed. In other words, the side that is covered by the 18 is marked with 2, and the frame member 21 is used to face the surface: Thereby, it is possible to suppress the alignment of the alignment marks 16, 182 = ^8, thereby suppressing the alignment marks Ι6Γ18 = contact', and suppressing the rust alignment marks 16, 18 from being formed. Alternatively, ί6, 18 may be sealed by the sealing member 17, and the aligning mark may be used in the case of the case. However, the use of the sealing cover suppresses the generation of rust. As in the embodiment, it is more advantageous to compare the phases with the frame member 21, such as the second cover. That is, the 16 and 18 of the present embodiment are covered with the 扪 alignment marks 16, 18 and only 21, 201230268 copper-containing underlayer A', so the reflectance of light is low, if such alignment marks 16, 18 are present in In the sealed area, the light foot will be correspondingly reduced. Further, the frame member 21 includes a filler for realizing whitening, and therefore, it is easy to transmit a sulfur gas component in the air as compared with the sealing member 17 not containing the filler, so that deterioration of the alignment marks 16, 18 can be suppressed correspondingly. . As described above, according to the present embodiment, the two sets of alignment marks 16 and 18 are formed on the module substrate 3. However, for example, when the number of LED chips 11 having a relatively small number (for example, about half) is mounted, only the first one may be formed. Align the mark μ. The pitch of the branch portion 16a is the limit of the accuracy of the remaining moment, and therefore, it is generally considered that 〇 5 mm is the minimum pitch. Therefore, when the LED wafer 11 is mounted at a high density at a pitch narrower than the above-described pitch, for example, as in the second embodiment, the second alignment mark 18 is formed in addition to the first alignment mark 16 can. In other words, according to the present embodiment, the light-emitting module in which the number of the LED chips 11 is relatively small and the module substrate 3 of the light-emitting module in which the number of the LED chips 11 are multiplied can be used as a common component, and the components can be easily stored. Management, so that she can reduce the manufacturing cost of the lighting module. The above-described form of addition is suggested as an example, and there is no intention to limit the scope of the invention. The above-described embodiments can be implemented in various other forms, and various omissions, substitutions and changes can be made without departing from the scope of the invention. The above embodiments and variations thereof are included in the scope and spirit of the invention, and are equally included in the scope of the invention disclosed in the appended claims. 22 201230268r -----JT -1 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing the appearance of an LED lamp according to an embodiment. Fig. 2 is a plan view showing the 1^] lamp of the figure along the axis. Fig. 3 is a plan view showing the light-emitting module of the embodiment of the lamp mounted on the light-emitting side from the exit side of the light. 1 is a cross-sectional view of the light-emitting module of Fig. 3 cut by lines F4-F4. Fig. 5 is a plan view showing a module substrate of the light-emitting module of Fig. 3. Fig. 6 is a plan view showing a protective layer in which the module substrate of Fig. 5 is covered. Fig. 7 is a plan view showing a protective layer of Fig. 6 provided on the module substrate of Fig. 5. "" Fig. 8 is a partially enlarged schematic view showing a modification of the alignment mark of the light-emitting module of Fig. 3. Fig. 9 is a plan view showing the light-emitting module of the second embodiment incorporated in the light-emitting side of the first embodiment of the present invention. Fig. 10 is a cross-sectional view showing the light-emitting module of Fig. 9 cut by a line F10-F10. 11 is a schematic plan view of a module substrate of the light emitting module of FIG. 9. Figure 12 is a plan view showing a protective layer covering the module substrate of Figure 11 . Fig. 13 is a plan view showing a state in which the protective layer of Fig. 12 is placed on the module substrate of Fig. u. 23 201230268 [Description of main component symbols] 1, 20: Distribution module 3: Module substrate 3a: Base plate 3b: Insulation layer 4, 6c': Notch 6: Power supply pattern/metal pattern 6a, 6a': Electrode portion 6b, 6W : joint portion 6c : protrusion portion 8 : reflection layer / metal pattern 9 : power supply pad / metal pattern 11 : LED wafer / component 12 - die bond material 13 : bond wire / component 13a, 13b: end bond wire / composition Element 15, 21: frame members 16, 18: alignment marks 16a, 18a: branch line portion: sealing member 19: protective layer 61: first end side / end side 61': first end side 62: second end side / End edge 24 201230268 100 : LED lamp 102 : Main body 103 : Module fixing table 103a : Surface 104 : Housing mounting convex portion 105 : Concave portion 106 : Through hole 106 a : Groove portion 107 : Heat sink 111 : Insulating member 111 a : Bottom Wall 112: Insulation protrusion 114: Through hole 115: Lamp port 116: Substrate 117: Lamp body 118: Eye terminal 121: Lighting device 122: Circuit board 123: Circuit part 124: Connection member 161: Illumination cover 162: Occlusion Ring A: base layer 25 201230268 B: intermediate layer C: surface layer F4-F4, F10-F10: line L: wire W: 26 degrees