TW201230188A - Plasma processing apparatus and optical monitoring device - Google Patents

Plasma processing apparatus and optical monitoring device Download PDF

Info

Publication number
TW201230188A
TW201230188A TW100130476A TW100130476A TW201230188A TW 201230188 A TW201230188 A TW 201230188A TW 100130476 A TW100130476 A TW 100130476A TW 100130476 A TW100130476 A TW 100130476A TW 201230188 A TW201230188 A TW 201230188A
Authority
TW
Taiwan
Prior art keywords
light
detecting
substrate
mesh
hole
Prior art date
Application number
TW100130476A
Other languages
Chinese (zh)
Other versions
TWI437634B (en
Inventor
Toshihisa Nozawa
Takahiro Senda
Shinya Nishimoto
Munetaka Yamagami
Kazuki Moyama
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201230188A publication Critical patent/TW201230188A/en
Application granted granted Critical
Publication of TWI437634B publication Critical patent/TWI437634B/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

To carry out high accuracy optical monitoring of the surface of a substrate to be treated inside a treatment vessel using non-coherent monitor light having a wide wavelength range, without affecting the uniformity of the electromagnetic radiation from a planar slot antenna. The optical monitor device (100) of the present microwave plasma etching device has: a monitor head (102) located in a position more radially inward than the edge of a semiconductor wafer (W) mounted on a susceptor (12), more radially outward than a coaxial tube (66), and above a cooling jacket plate (72); an optical waveguide (104) for monitoring provided vertically below the monitor head (102), and longitudinally traversing the cover plate (72), a dielectric plate (56), a slot plate (54), and a dielectric window (52); and a monitor main body (108) optically connected to the monitor head (102) via an optical fiber (106).

Description

201230188 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種使用藉由微波放電所生成之電 漿來對被處理基板施予所欲處理之電漿處理裝置。 【先前技術】 在半導體元件或FPD(Flat Panel Display)製程中的 蝕刻、沉積、氧化、濺鍍等處理中，為了使處理氣體能 以較低溫來進行良好反應，通常會利用電漿。自以往， 這類電漿處理係廣泛地使用藉由MHz帶域之高頻放電 所生成的電漿，或是藉由GHz帶域之微波放電所生成 的電漿。 藉由微波放電所生成之電漿具有能夠在低壓下生 成電子溫度低的高密度電漿之優點’特別是藉由採用槽 孔天線與平板狀之微波導入窗構造，便可有效率地生成 大口徑電漿。又，由於不需要有磁場，因此亦具有可簡 化電漿處理裝置之優點。 槽孔天線當中，特別是輻射狀槽孔天線，藉由從具 有同心圓狀地配列之多個槽孔之槽孔板均勻且大範圍 地放射微波’便可生成電漿密度均勻且具有優異控制性 之大口徑電漿。 然而’微波電漿處理裝置中亦有透過原位(in_situ) 偵測來即時地控制處理容器内所進行之製程。於具備上 述槽孔天線之微波電漿處理裝置内建光學偵測裝置 201230188 時’便需要有一種偵測用光導波路徑不會對槽孔天線之 電磁波放射特性的均勻性，甚至對電漿密度的均勻性造 成影響之裝置結構。 關於這一點，專利文獻丨中揭示的微波電漿處理裝 置所内建之光學偵測裝置，係利用一種微波傳送線路 (其係將微波產生器所產生之微波朝處理容器傳送)的最 終區間會在槽孔天線中心處於鉛直方向自正上方終結 之同軸線路。同軸線路的内部導體係由中空管所構成。 藉由使光線通過該中空管中，便能夠在原位(in_situ)光 學性地偵測處理容器内所進行之製程。 該光學偵測裝置係設置有與同軸線路的中空管（内 部導體）為連續地且貫穿槽孔天線中心之光導波路徑用 孔洞。一般來說，平板槽孔天線的中心即為輻射狀導波 道的中心’縱使於該處形成有光導波路徑用貫穿孔，仍 舊不會對槽孔天線之電磁波放射特性的均勻性造成影 響，故不會妨礙到電漿密度的均勻性或控制性。 專利文獻1 :日本特開2008-251660 上述專利文獻1所揭示之習知的光學偵測裝置會 有難以在微波傳送線路（同軸線路）中設置偵測用光導波 路徑之困難點。亦即，由於電磁波之傳輸模式或特性阻 抗，使得作為同軸線路的内部導體之中空管的口徑有其 極限，例如在膜厚偵測中，姑且不論使用雷射光於镇測 光之情況’就算是使用如燈光之波長帶域較廣的非同調 性光於偵測光之情況仍無法獲得口徑（亦即光量)足夠大 6 201230188 的光導波路徑。 又 ，上述習知的光學_裝置亦有無法將微波傳送 線路(同軸線路)的中空管（内部導體)利用於 供應道之限制。 乱體的 【發明内容】 本發明係為了解決上述習知技術問題點所發明 者，其提供一種可使用不會對平板槽孔天線之電磁 =性的均勻性造成影響之波長帶域較廣的偵測光(特 別疋非同調性偵測光），來高精確度地對處理容器内之 被處理基板表©進行光學性偵測之光耗騎置及 漿處理裝置。 —本發明之電漿處理裝置具備有：可真空排氣的處理 =，其頂板的至少-部份係由介電體窗所構成；基板 二…p ’係於該處理容器内保持被處理基板；處理氣體 二應β係為了對該基板施予所欲電漿處理，*將所欲 處理氣體供應至該處理容器内；導體的槽孔板，係具有 用以將微纽射至魏料㈣之丨個或複數個槽 孔’而設置於該介·窗上；微波供應部，係為了藉由 微波放電來產线處理㈣的電I，喊過該槽孔板及 ，介電體窗來對該處理容器内供應微波；及光學憤測 部’係透過該槽孔板所形成之網狀透孔與該介電體窗來 光學性地監視或測量該處理容器内之該基板表面。 本發明之光學偵測裝置係於電漿處理裝置中光學 7 201230188 性地監視或測量基板表面之光學偵測裝置，其中該電聚 處理裝置係將該被處理基板收納在項板的至少一部份 由介電體窗所構成之可真空排氣的處理容器内，而對該 處理容器内供應處理氣體，並且，透過設置於該介電體 面上之具有1個或複數個槽孔之導體的槽孔板與該介 電體窗來將微波供應至該處理容器内，而藉由微波放電 來產生該處理氣體的電漿，且於該電漿下對該基板施予 所欲電漿處理；該光學偵測裝置具備有：光源，係產生 偵測光；感光部，係針對該偵測光而將來自該基板的反 射光轉換成電氣訊號；偵測電路，係對來自該感光部的 電氣訊號施予特定的訊號處理而輸出偵測資訊或偵測 結果；網狀透孔，係形成於該槽孔板而用以供該偵測光 與來自該基板表面的反射光通過；偵測頭，係透過該槽 孔板的網狀透孔及該介電體窗來將該偵測光照射在該 基板保持部上的該基板表面，並透過該介電體窗及該槽 孔板的網狀透孔而引入來自該基板表面的反射光；偵^ 光傳送部，係用以將該偵測光從該光源傳送至該偵測 頭；及反射光傳送部，係用以將該反射光從該_頭傳 送至該感光部。 上述結構之微波處理裝置中，從微波供應部所 供應之微波雜槽孔板的槽孔透過介電體窗而被放射 至處理容器内，並因該微波電場使得處理氣體被電離而 生成電黎。在介f體窗附近所生成之妓會在處理容器 内擴散至T方1械絲下對基板簡部上的基板^ 8 201230188 面進打微細加工或薄膜沉積等所欲處理。 上述光學债測部或光學侧裝置係透過通過導體 槽孔板及介電體窗之偵測用光導波路徑，而在原位 (m-S1tu)光學性地監視或測量受到上述電漿處理之被處 理基板表©。此處，於槽孔板處，網狀透孔係供作積測 用光導波路徑，另-方面，從微波供應部所供應之微波 則會在網狀透孔的部位而與槽孔以外的其他部位同樣 地不會溢漏來順暢地傳輪。藉此，便可建構出使用不會 對槽孔天線之電磁波放射特性的均勻性(甚至對電聚密 度的均勻性)造成影響且適於傳輸之波長帶域較廣的谓 測光(特別是非同調性偵測光)之偵測用光導波路徑，來 對被處理基板表面高精確度且穩定確實地進行所欲光 學性偵測。 依據本發明之光學偵測裝置或電渡處理裝置，藉由 上述構成及作用，便可使用不會對平㈣孔天線之電磁 波放射特性的均勻性造成影響之波長帶域較廣的偵測 光(特別是非同調性伽彳幻來對處理容器⑽被處理基 板表面高精確度地進行光學性偵測。 【實施方式】 以下，參酌添附圖式來針對本發明較佳實施形態加 以說明。 圖1係顯示本發明一實施形態之微波電漿處理裝 置之結構。該微波電漿處理裝置係構成為使用平板槽孔 9 201230188 天線之平板狀表面波激發型的微波電漿蝕刻裝置，而具 有例如鋁或不鏽鋼等金屬製的圓筒型真空處理室（處理 容器）1〇。處理室10係安全接地。 首先說明該微波電漿蝕刻裝置中無關於電漿產生 之各部結構。 用以載置被處理基板(例如半導體晶圓W)之圓板 狀曰a座12係作為基板保持台（亦兼作為高頻電極）而水 平地配置於處理室10内下部中央處。該晶座12係由例 如鋁所構成，而由自處理室1〇底部朝垂直上方延伸之 絕緣性筒狀支撐部14所加以支稽。 筒狀支撐部14的外周係於自處理室1〇底部朝垂直 上方延伸之導電性靖狀支稽·部16與處理室1 〇内壁之間 形成有環狀排氣流路18。該排氣流路ι8的上部或入口 處係安裝有環狀隔板20，且於底部設置有丨個或複數 個排氣埠22。各排氣埠22係透過排氣管24而連接有 排氣裝置26。排氣裝置26係具有渦輪分子幫浦等真空 幫浦，可將處理室10内的電漿處理空間減壓至所欲^ 空度。處打HM則壁外則安褒有能夠開閉半導體晶圓 W的搬出入口 27之閘閥28。 晶座12係透過匹配單元32及供電棒34而電連接 有RF偏壓用高頻電源30〇該高頻電源3〇會以特定功 率輸出適於控制被吸引至半導體晶圓…的^子能量之 -定頻率(例如13.56MHz)的高頻1配單元32^内 有能夠在高頻電源3G側的阻抗與負荷(主要為電極、電 201230188 漿、處理室）侧的阻抗之間取得平衡之匹配器，而該匹 配盗中係包含有自偏壓產生用的阻隔電容器（blocking condenser) ° 晶座12的上面係設置有以靜電吸附力來保持半導 體晶圓W之靜電夾具36,靜電夾具36的半徑方向外側 則設置有環狀地圍繞半導體晶圓W周圍之聚焦環38。 靜電爽具36係於—對絕緣膜36b、36c之間挾置有導電 膜所構成的電極36a，電極36a係透過開關42及被覆線 43而電連接有高壓的直流電源40。半導體晶圓W會因 從直流電源40所施加之直流電壓產生的靜電力而被吸 附保持於靜電夾具％上。 、晶座12内部係設置有延伸於例如圓周方向之環狀 二某至44該冷媒室44係從冷卻單元(未圖示）透過配 管46 48而循環供應有特定溫度的冷媒(例如冷卻水201230188 VI. Description of the Invention: [Technical Field] The present invention relates to a plasma processing apparatus for applying a treatment to a substrate to be processed using a plasma generated by microwave discharge. [Prior Art] In the etching, deposition, oxidation, sputtering, and the like in a semiconductor element or FPD (Flat Panel Display) process, plasma is usually used in order to allow a process gas to perform a good reaction at a relatively low temperature. Since the past, such plasma processing has widely used plasma generated by high-frequency discharge in the MHz band or plasma generated by microwave discharge in the GHz band. The plasma generated by the microwave discharge has the advantage of being able to generate a high-density plasma having a low electron temperature at a low pressure. In particular, by using a slot antenna and a flat-shaped microwave introduction window structure, it is possible to efficiently generate a large Caliber plasma. Further, since a magnetic field is not required, there is an advantage that the plasma processing apparatus can be simplified. Among the slot antennas, especially the radial slot antennas, the plasma density is uniform and excellent control by uniformly and widely radiating microwaves from the slot plates having a plurality of slots arranged concentrically. Large diameter plasma. However, the microwave plasma processing apparatus also has an in-situ detection to instantly control the process performed in the processing vessel. When the optical detecting device 201230188 is built in the microwave plasma processing device having the above-mentioned slot antenna, it is necessary to have a detection optical waveguide path which does not uniformize the electromagnetic wave radiation characteristics of the slot antenna, and even the plasma density. The uniformity of the device structure that affects. In this regard, the optical detecting device built in the microwave plasma processing apparatus disclosed in the patent document 利用 uses a microwave transmission line (which transmits the microwave generated by the microwave generator toward the processing container). The coaxial line that terminates in the vertical direction from the top in the center of the slot antenna. The internal guiding system of the coaxial line is composed of a hollow tube. By passing light through the hollow tube, the process carried out in the processing vessel can be optically detected in-situ. The optical detecting device is provided with a hole for a light guiding path which is continuous with a hollow tube (inner conductor) of the coaxial line and which penetrates the center of the slot antenna. In general, the center of the planar slot antenna is the center of the radial waveguide. Even though the through hole for the optical waveguide path is formed there, the uniformity of the electromagnetic radiation characteristics of the slot antenna is not affected. Therefore, it does not hinder the uniformity or controllability of the plasma density. Patent Document 1: Japanese Laid-Open Patent Publication No. 2008-251660 The conventional optical detecting device disclosed in Patent Document 1 has difficulty in providing a light guiding path for detecting light in a microwave transmission line (coaxial line). That is, due to the transmission mode or characteristic impedance of the electromagnetic wave, the diameter of the hollow tube as the inner conductor of the coaxial line has its limit, for example, in the film thickness detection, even if the laser light is used for the measurement of the light in the town, it is The use of non-coherent light such as a wide wavelength band of light in the detection of light still does not allow the aperture (ie, the amount of light) to be sufficiently large to illuminate the optical waveguide path of 201230188. Further, the above-mentioned conventional optical device has a limitation that the hollow tube (internal conductor) of the microwave transmission line (coaxial line) cannot be used for the supply path. SUMMARY OF THE INVENTION The present invention has been made in order to solve the above-mentioned problems of the prior art, and provides a wide wavelength band which can be used without affecting the uniformity of the electromagnetic properties of the flat slot antenna. A light-consuming riding and slurry processing device that detects light (especially non-coherently detected light) to optically detect the substrate to be processed in the processing container with high precision. - The plasma processing apparatus of the present invention is provided with: a process capable of vacuum evacuation = at least a portion of the top plate is composed of a dielectric window; and a substrate 2...p' is held in the processing container to hold the substrate to be processed The processing gas is required to apply the desired plasma treatment to the substrate, and the gas to be processed is supplied to the processing container; the slot plate of the conductor is used to irradiate the micro-injection to the material (4) The one or more slots are disposed on the medium window; the microwave supply unit is for the wire I to process the wire (4) by microwave discharge, shouting the slot plate and the dielectric window The microwave is supplied into the processing container; and the optical inversion portion is configured to optically monitor or measure the surface of the substrate in the processing container through the mesh through hole formed by the slot plate and the dielectric window. The optical detecting device of the present invention is an optical detecting device for monitoring or measuring the surface of a substrate in the plasma processing device, wherein the electropolymerizing device houses the processed substrate in at least one part of the object board. a processing chamber for vacuum evacuation consisting of a dielectric window, wherein a processing gas is supplied into the processing container, and a conductor having one or a plurality of slots is disposed on the surface of the dielectric body. The slot plate and the dielectric window supply microwaves into the processing container, and the plasma of the processing gas is generated by microwave discharge, and the desired plasma treatment is applied to the substrate under the plasma; The optical detecting device is provided with: a light source for generating detection light; a photosensitive portion for converting reflected light from the substrate into an electrical signal for detecting the light; and a detecting circuit for electrically connecting the photosensitive portion The signal is applied to the specific signal processing to output the detection information or the detection result; the mesh through hole is formed in the slot plate for the reflected light and the reflected light from the surface of the substrate to pass; the detecting head , Transmitting the detection light onto the surface of the substrate on the substrate holding portion through the mesh through hole of the slot plate and the dielectric window, and transmitting through the dielectric window and the mesh of the slot plate a hole for introducing reflected light from the surface of the substrate; a light transmitting portion for transmitting the detected light from the light source to the detecting head; and a reflected light transmitting portion for receiving the reflected light from the The _ head is transferred to the photosensitive portion. In the microwave processing apparatus of the above configuration, the slot of the microwave slot plate supplied from the microwave supply unit is radiated into the processing container through the dielectric window, and the processing gas is ionized by the microwave electric field to generate the electric ray . The crucible generated in the vicinity of the f-body window is diffused into the processing container to the surface of the substrate, and the surface of the substrate is subjected to microfabrication or thin film deposition. The optical debt measuring unit or the optical side device is optically monitored or measured in situ (m-S1tu) by the above-mentioned plasma processing through the optical waveguide path for detecting through the conductor slot plate and the dielectric window. Processed substrate table ©. Here, at the slot plate, the mesh through hole is used for the optical waveguide path for integration measurement, and on the other hand, the microwave supplied from the microwave supply portion is outside the slot of the mesh through hole. The other parts will not leak in the same way to smoothly pass the wheel. Thereby, it is possible to construct a pre-measured light (especially non-coherent) which has a wide wavelength band which is not suitable for the uniformity of the electromagnetic wave radiation characteristics of the slot antenna (even the uniformity of the electropolymer density) and which is suitable for transmission. The detection light path of the detection light is used to perform the desired optical detection on the surface of the substrate to be processed with high accuracy and stability. According to the optical detecting device or the electric wave processing device of the present invention, it is possible to use the detecting light having a wide wavelength band which does not affect the uniformity of the electromagnetic wave radiation characteristics of the flat (tetra) hole antenna by the above configuration and action. (In particular, the non-coherent gamma ray is used to optically detect the surface of the substrate to be processed of the processing container (10) with high precision. [Embodiment] Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. The structure of a microwave plasma processing apparatus according to an embodiment of the present invention is shown. The microwave plasma processing apparatus is configured to use a flat surface wave excitation type microwave plasma etching apparatus using a flat slot 9 201230188 antenna, and has, for example, aluminum. Or a cylindrical vacuum processing chamber (processing container) made of metal such as stainless steel. The processing chamber 10 is safely grounded. First, the structure of each part in which the plasma is generated in the microwave plasma etching apparatus will be described. The disk-shaped cymbal 12 of the substrate (for example, the semiconductor wafer W) is horizontally disposed as a substrate holding stage (also serving as a high-frequency electrode). The center of the lower portion of the chamber 10. The crystal seat 12 is made of, for example, aluminum, and is supported by an insulating cylindrical support portion 14 extending from the bottom of the processing chamber 1 to the vertically upward direction. The outer circumference of the cylindrical support portion 14 An annular exhaust gas flow path 18 is formed between the conductive gas-like branch portion 16 extending from the bottom of the processing chamber 1 at a vertically upward direction and the inner wall of the processing chamber 1 . The upper portion or the inlet of the exhaust gas flow path ι8 An annular partition 20 is attached to the bottom, and one or a plurality of exhaust ports 22 are provided at the bottom. Each of the exhaust ports 22 is connected to the exhaust pipe 24 via an exhaust pipe 24. The exhaust device 26 has A vacuum pump such as a turbo molecular pump can depressurize the plasma processing space in the processing chamber 10 to a desired degree of air. At the HM, the outside of the wall is provided with a loading and unloading port 27 capable of opening and closing the semiconductor wafer W. The gate valve 28 is electrically connected to the RF bias high-frequency power source 30 through the matching unit 32 and the power supply rod 34. The high-frequency power source 3 is output at a specific power suitable for controlling the attraction to the semiconductor wafer. ^The high-frequency 1 matching unit 32^ of the sub-energy-fixed frequency (for example, 13.56MHz) is capable of being in the high frequency A matching device that balances the impedance on the source 3G side with the impedance on the side of the load (mainly the electrode, the electric charge 201230188, the processing chamber), and the matching pirate includes a blocking capacitor for self-bias generation. The upper surface of the crystal holder 12 is provided with an electrostatic chuck 36 for holding the semiconductor wafer W by electrostatic attraction, and the outer side of the electrostatic chuck 36 in the radial direction is provided with a focus ring 38 that surrounds the periphery of the semiconductor wafer W in a ring shape. The electrode 36a is formed by arranging a conductive film between the insulating films 36b and 36c, and the electrode 36a is electrically connected to the high-voltage DC power source 40 through the switch 42 and the covered wire 43. The semiconductor wafer W is caused by The electrostatic force generated by the DC voltage applied from the DC power source 40 is adsorbed and held on the electrostatic chuck %. The inside of the crystal holder 12 is provided with a ring extending in, for example, the circumferential direction. The refrigerant chamber 44 is circulated from the cooling unit (not shown) through the pipe 46 48 to supply a refrigerant having a specific temperature (for example, cooling water).

CaW)„。藉由冷媒的溫度便可控制靜電夾具36上之半導體 曰_曰圓W的處理溫度。再者’來自傳熱氣體供應部（未圖 :)之傳熱氣體(例如H e氣)係透過氣體供應管5 〇而被供 f至靜電炎具36上面與半導體晶圓μ面之間。又， :了進科導體晶圓w之载置與卸載，亦設置有於垂 =方向貫穿晶座12且可上下移動之舉升銷及其升降機 攝(未圖示）等。 接下來’說明該微波電隸刻裝置於電衆產生 之各部結構。 處理至10之與晶座12呈對向的頂面係氣密地安裝 201230188 有作為頂板之微波導入用的圓形介電體窗52。該介電 體窗5 2係如後所詳加敘述般地以針對短波長光線(特別 是紫外線)而透光率高的合成石英來構成偵測用光導波 路徑104所通過之部分52a，並以成本較低之熔融石英 來構成其他部分52b。 ' 介電體窗52上係設置有平板型的槽孔天線，例如 圓板形的輻射狀槽孔天線55。該輻射狀槽孔天線55係 由槽孔板54、介電體板(延遲板)56及介電體板上面的金 屬部（蓋板72的下面）所構成。 槽孔板54如圖3A所示，係具有作為放射微波之槽 孔而同心圓狀地分佈之多個槽孔對(54a、54b)。再者， 後續亦會詳加敘述，槽孔板54中，偵測用光導波路徑 104所通過之部分54c係形成有網狀透（穿透)孔mh。 該幸S射狀槽孔天線55係透過槽孔板54上方所設置 之介電體板56而電磁性地結合於微波傳送線路58。介 電體板56係以針對短波長光線(特別是紫外線）而透光 率咼的合成石英來構成偵測用光導波路徑所通過 之部分56a。而介電體板56的其他部分5汕則係由適於 壓縮(縮短)微波的波長之高介電率介電體(例如石英、氧 化鋁、氮化鋁)所構成。此處係與介電體窗52同樣地由 成本較低之熔融石英所構成。 破波傳送線路58係用以將從微波產生器6〇以特定 功率所輸出之例如2.45GHz的微波傳送至輻射狀槽孔 天線55之線路’而具有導波f 62、導波管同軸管轉換 12 2〇123〇188 器64及同軸管66。導波管62係例如方形的導波管， 並以TE模式作為傳送模式而將來自微波產生器6〇的微 波朝向處理室10傳送至導波管-同軸管轉換器64。 導波管·同軸管轉換器64係結合方形導波管62的 終端部與同軸管66的始端部，而將方形導波管62的傳 送模式轉換成同軸管66的傳送模式。同軸管66係從導 波管-同軸管轉換器64朝鉛直正下方延伸至處理室10 的上面中心部，其同軸線路的終端或下端則係透過介電 體板56而結合於槽孔板54的中心部。同軸管66係由 圓筒體所構成，微波會在内部導體68與外部導體70之 間的空間以TEM模式傳輸。 微波產生器60所輸出之微波會在上述微波傳送線 路58的導波管62、導波管-同軸管轉換器64及同軸管 66傳輸’再被供電至輻射狀槽孔天線55的介電體板 56。然後’於介電體板56内波長一邊縮短一邊朝半徑 方向擴散之微波，會從輻射狀槽孔天線55的各槽孔對 54a、54b成為圓偏波(其係包含2個直交之偏波成分)的 平面波’而朝向處理室1〇内放射。放射至處理室内 之微波會使得附近的氣體電離，而產生密度高且電子溫 度低的電漿。此外，微波電場(表面波的電場)係沿著介 電體窗52的表面與電漿而傳輸於輻射方向。 介電體板56上係設置有覆蓋處理室1〇上面而兼作 為天線後面板之蓋板72。該蓋板72係由例如鋁所構 成，其具有能夠吸收(散熱)在介電體窗52及介電體板 13 201230188 56處所產生之介電損失的熱量或依製程而產生之熱 量’並調整為任意溫度之功能。為了該冷卻功能，蓋板 72内部所形成之流道74係從冷卻單元(未圖示）透過配 管76、78而循環供應有特定溫度的冷媒(例如冷卻水 cw)°該蓋板72中係於偵測用光導波路徑1〇4所通過之 部位處形成有垂直地貫穿板面之孔72a。 處理氣體供應部80係具有配置於處理室10外之處 理氣體供應源82 ;自介電體窗52之較低位置處，而環 狀地形成於處理室1〇側壁中之分歧管或緩衝室84 ;等 間隔設置於圓周方向’且自緩衝室82面臨電漿產生空 間之多個側壁氣體喷出孔86 ;從處理氣體供應源82延 伸至緩衝室84之氣體供應管88。氣體供應管86中途 係設置有MFC(質流控制器）9〇及開閉閥92。 該處理氣體供應部80中，從處理氣體供應源82以 特疋流量被送出之處理氣體會通過氣體供應管88而被 導入至處理室10側壁内的緩衝室84，並在緩衝室84 内使得周圍方向的壓力均勻化後再從侧壁氣體喷出口CaW) „. The temperature of the refrigerant can control the processing temperature of the semiconductor 曰 曰 曰 circle W on the electrostatic chuck 36. Further, the heat transfer gas from the heat transfer gas supply unit (not shown) (for example, He gas) ) is supplied through the gas supply pipe 5 to the surface of the electrostatic device 36 and the surface of the semiconductor wafer. Further, the loading and unloading of the semiconductor conductor wafer w is also provided in the vertical direction. The lifting pin and the lifter (not shown) which can be moved up and down through the crystal holder 12, etc. Next, the structure of each part of the microwave electric engraving device generated by the electrician is explained. The opposite top surface is hermetically mounted to 201230188 as a circular dielectric window 52 for microwave introduction of the top plate. The dielectric window 52 is as described later in detail for short-wavelength light (special The synthetic quartz which is ultraviolet light and has a high light transmittance constitutes a portion 52a through which the optical waveguide 104 for detection is passed, and the lower portion of the fused silica is used to constitute the other portion 52b. The dielectric window 52 is provided with A flat-plate slot antenna, such as a disk-shaped radial slot antenna 55. The slot antenna 55 is composed of a slot plate 54, a dielectric plate (retardation plate) 56, and a metal portion (the lower surface of the cover plate 72) on the upper surface of the dielectric plate. The slot plate 54 is as shown in Fig. 3A. A plurality of pairs of slots (54a, 54b) distributed concentrically as slots for radiating microwaves. Further, as will be described later, the optical waveguide path 104 for detecting is used in the slot plate 54. The through portion 54c is formed with a mesh transparent (penetrating) hole mh. The fortunate S-shaped slot antenna 55 is electromagnetically coupled to the microwave transmission line through the dielectric plate 56 disposed above the slot plate 54. 58. The dielectric plate 56 is formed by a synthetic quartz having a light transmittance 短 for short-wavelength light (particularly ultraviolet light) to form a portion 56a through which the optical waveguide for detection passes. The other portion 5 of the dielectric plate 56 The crucible is composed of a high dielectric dielectric (e.g., quartz, alumina, aluminum nitride) suitable for compressing (shortening) the wavelength of the microwave. Here, the dielectric cost is lower than that of the dielectric window 52. The fused silica is composed of a broken wave transmission line 58 for outputting from the microwave generator 6 at a specific power. The 2.45 GHz microwave is transmitted to the line of the radial slot antenna 55 and has a guided wave f 62, a waveguide coaxial tube conversion 12 2 〇 123 〇 188 64 and a coaxial tube 66. The waveguide 62 is, for example, a square guide The waveguide, and the TE mode is used as the transmission mode to transmit the microwave from the microwave generator 6〇 toward the processing chamber 10 to the waveguide-coaxial converter 64. The waveguide/coaxial converter 64 is combined with the square guided wave The end portion of the tube 62 and the beginning end of the coaxial tube 66 convert the transfer mode of the square waveguide 62 into the transfer mode of the coaxial tube 66. The coaxial tube 66 is directed from the waveguide-coaxial converter 64 directly below the lead. Extending to the upper central portion of the processing chamber 10, the terminal or lower end of the coaxial line is coupled to the central portion of the slot plate 54 through the dielectric plate 56. The coaxial tube 66 is formed of a cylindrical body, and microwaves are transmitted in a TEM mode in a space between the inner conductor 68 and the outer conductor 70. The microwave outputted by the microwave generator 60 is transmitted to the waveguide 62 of the microwave transmission line 58, the waveguide-coaxial converter 64 and the coaxial tube 66, and is then supplied to the dielectric of the radial slot antenna 55. Board 56. Then, the microwave which is diffused in the radial direction while shortening the wavelength in the dielectric plate 56 becomes a circular wave from each of the pair of slots 54a and 54b of the radial slot antenna 55 (the system includes two orthogonal polarizations The plane wave of the component is emitted toward the processing chamber 1 . Microwaves radiated into the processing chamber ionize nearby gases and produce plasma with high density and low electron temperature. Further, a microwave electric field (the electric field of the surface wave) is transmitted in the radiation direction along the surface of the dielectric window 52 and the plasma. The dielectric plate 56 is provided with a cover 72 that covers the upper surface of the processing chamber 1 and serves as an antenna rear panel. The cover plate 72 is made of, for example, aluminum, and has heat capable of absorbing (heating) dielectric loss generated at the dielectric window 52 and the dielectric plate 13 201230188 56 or heat generated by the process' and adjusting For any temperature function. For this cooling function, the flow path 74 formed inside the cover plate 72 is circulated from the cooling unit (not shown) through the pipes 76, 78 to supply a specific temperature of refrigerant (for example, cooling water cw). A hole 72a that vertically penetrates the plate surface is formed at a portion where the detection optical waveguide path 1〇4 passes. The process gas supply unit 80 has a process gas supply source 82 disposed outside the process chamber 10; a branch pipe or a buffer chamber annularly formed in the lower side of the dielectric chamber window 52 and annularly formed in the side wall of the process chamber 1 84; a plurality of side wall gas ejection holes 86 disposed at equal intervals in the circumferential direction and facing the plasma generating space from the buffer chamber 82; and a gas supply tube 88 extending from the processing gas supply source 82 to the buffer chamber 84. An MFC (mass flow controller) 9A and an opening and closing valve 92 are provided in the middle of the gas supply pipe 86. In the processing gas supply unit 80, the processing gas sent out from the processing gas supply source 82 at a characteristic flow rate is introduced into the buffer chamber 84 in the side wall of the processing chamber 10 through the gas supply pipe 88, and is made in the buffer chamber 84. The pressure in the surrounding direction is equalized and then discharged from the side wall gas outlet

86朝向處理室1〇中心略水平地喷出，而往電漿產生空 間擴散。 I 控制部94係包含有微電腦，可控制該電漿蝕刻裝 置内各部(例如排氣裝置26、高頻電源3〇、靜電夹具％ 用開關42、微波產生器60、處理氣體供應部8〇、傳熱 氣體供應部（未圖示）、後述光學偵測裴置1〇〇等)之個別 的動作及裝置整體的動作。 201230188 於該微波電聚触刻裝置中，蝕刻之進行首先係使間 閥2 8成為打開狀態來將加工對象(半導 至處理室H)内並載置於靜電夾具36上。然後間間 28成為關狀態後，從處理氣體供應部8()以特定流量 來將處理氣體(亦即#刻氣體’—般來說為混合氣體)導 入至處理室1G内。又’從傳熱氣體供應部對靜電爽且 36與半導體晶圓W的接觸界面供應傳熱氣體取幻、， 並打開關42而藉由靜電夾具36的靜電吸附力來將傳 熱氣體封入於上述接觸界面。然後，開啟微波產生器 6〇，而將從微波產生器60以特定功率所輸出之微波， 透過微波傳·路58龍额電絲㈣槽孔天線 55，再從輻射狀槽孔天線55將微波放射至處理室ι〇 ^^者’開啟高頻電源30而以特定功率輸出好偏壓 =頻，並將該高親舰料元32及供電棒3 在晶座12。 從處理氣體供應部80的側壁氣體噴出口 ％導入至 处理室10 Μ之齡丨氣體會齡 :波之電場使得氣體粒子被電離而產生=之並 電衆產生後，微波會成為沿著介電體窗52下 、電編向之面)與電漿而傳輸於輻射方向之表面 ί。如此地，於介電體窗52下所生成之«便會擴散 ，下方，而對半導體晶圓w主面的被加工膜進行使用 電漿令的自由基之等向性姓刻及使用離子照射之垂直 刻。 201230188 該微波電漿触刻裝置係具備有當於處理室内進 行触刻製程的狀況(例如被加工膜的膜厚會隨著時間經 過而減少）’能夠在原位(in_situ)或即時地進行光學性地 偵測被加工膜的膜厚之光學偵測裝置1〇〇。 該光學偵測裝置1 〇〇係設置於較晶座12上所載置 之半導體晶圓W的邊緣要靠近半徑方向内側，且較同 軸管66要靠近半徑方向外侧之位置處。光學偵測裝置 100係具有配置於蓋板72上之偵測頭1〇2、偵測用光導 .波路徑104、以及透過光纖106而與偵測頭1〇2光學性 地結合之偵測本體108。偵測用光導波路徑1〇4係從偵 測頭102朝鉛直正下方縱貫蓋板72、介電體板56、槽 孔板54及介電體窗52所加以設置。 圖2係顯示偵測頭1〇2及光導波路徑1〇4的結構。 偵測頭102係具有導體(例如鋁)所構成之可密閉的蓋狀 殼體110，而該殼體110中則設置有作為偵測用光學零 件之例如光反射體112及光學透鏡114。 光反射體112係由例如紹所構成，並如圖所示般地 於殼體110内具有與終端之光纖1〇6的端面呈對向而朝 向斜下方之大約45。的傾斜面。從光纖106水平地射出 之偵測光LB會在正面的光反射體112處朝垂直下方反 射’並通過光導波路徑104而入射至正下方的半導體晶 圓W。另一方面，從照射有偵測光lb之半導體晶圓w 朝垂直上方射出的反射光HB則會通過光導波路徑1〇4 而碰撞到光反射板112，並從光反射體112朝水平方向 201230188 反射而入射至光纖106。 光學透鏡114可使得從光纖106所射出之偵測光 LB朝向光反射體112以一定的擴散角度放射’且使得 來自光反射體112之反射光HB聚光而引入光纖106。 光學透鏡114可如圖所示般一體地安裝在光纖106前 端，抑或自光纖106分離而配置於特定位置處。 光纖106係由例如2芯的FO(Fan-out)光纖所構成， 而將用以傳送偵測光LB之内侧的往路光纖l〇6a與用以 傳送反射光HB之外側的復路光纖i〇6b —體地結集成 束。偵測祀LB會從内侧之往路光纖i〇6a的端面射出， 而反射光HB則會入射至外側之復路光纖1〇6b的端 面。光纖106係藉由收納在氣密安裝於殼體11()之導體 (例如鋁)所構成的套筒116中而與偵測頭1〇2相連接。 偵測頭102内部係如上所述地藉由導體所構成的 设體110及光纖套筒116而自外部電磁性地被遮蔽。藉 此，縱使是微波從介電體板56或輻射狀槽孔天線55通 過光導波路徑104而進入偵測頭1〇2内，仍不會溢漏至 偵測頭102外。 再者，偵測頭102的室内空間係自大氣空間被阻 隔，而藉由從殼體110上面所設置之吹淨氣體供應口 ^ 8所導入之吹淨氣體(例如氮(N2)氣)來經常地進行吹 淨。此處，吹淨氣體供應口 118係透過氣體供應管12〇 而連接於吹淨氣體供應源122。 此實施形態中，為了充份地進行偵測頭1〇2内吹 17 201230188 淨，偵測頭102底部係氣密地設置有導體(例如鋁)所構 成之厚壁的基底板124。該基底板124係於光導波路徑 104之通過位置處形成有與蓋板72的貫穿孔相連 續之貫穿孔124a ’ 形成有與蓋板72的排氣流道72b 相連々之排氣流道124b。排氣流道124b的出口則透過 排氣管126而連接於例如排氣扇所構成的排氣部128。 蓋板72内係透過下端所設置之連通道72c來將構成光 導波路徑104之貫穿孔72a與排氣流道72b加以連接。 由於從吹淨氣體供應口 118被供應至殼體11〇内之 吹淨氣體(N2氣體）會在充滿殼體110内後流經基底板 124的貫穿孔l24a->蓋板72的貫穿孔72a—連通道 72c—排氣流道72b—基底板124的排氣流道124b的密 閉空間’再被排出至外部的排氣部128。 此實施形態之光學偵測裝置1〇〇中，用以.偵測半導 體晶圓W之被加工膜膜厚之偵測光lb並非使用單一波 長的同調性雷射光’而是使用含有大範圍（例如 185nm〜785nm)的多種波長之非同調性燈光。此處，由 於偵測光LB所包含之短波長(特別是200nm以下）容易 被氧吸收，因此若是曝露在大氣中便會明顯衰退。 此實施形態中’如上所述，由於偵測頭102内的空 間，甚至是偵測用光導波路徑104的空間係經常以吹淨 氣體(N2氣體）來進行吹淨，因此從光纖106射出後的偵 測光LB，甚至是被引入至光纖106前的反射光HB便 不會接觸到大氣，而不容易衰退。藉此便可提高光學偵 201230188 測裝置100的偵測精確度》 又’為了同時兼顧光學偵測襞置100的偵測精確度 與輻射狀槽孔天線55之電磁波放射特性的均勻性，於 槽孔板54中偵測用光導波路徑104所通過之部位處或 區域54c形成有網狀透孔MH之結構亦非常地重要。 如圖3A所示，於槽孔板54的光導波路徑通過區域 54c(網孔）内係以特定密度而分佈有特定形狀及特定尺 寸的透孔MH。為了提高偵測精確度，網孔5如的開口 率愈大為佳，較佳為70%以上。此處，對提高網孔54c 的開口率來說’使透孔ΜΗ的開口形狀為多角形而會較 圓形要來得佳，最佳為正六角形（即蜂巢式構造）。 依據蜂巢式構造，例如，使透孔ΜΗ之一邊的長度 為j(mm)，使對邊的長度為k(mm)，當j=1 〇mm、又 k=1.73mm 時開 口率為 76.3%，當 j=〇 8mm、k=i 39匪 時開口率為8%。但當j=〇 5咖、k=〇別_時則 開口率會降低至60.3%。 如此地，於槽孔板54之光導波路徑通過區域(網 孔)54c中，若透孔MH的尺寸愈大，便會獲得較大的開 口率。但為了使微波之來自網孔的溢漏較少，透孔 的開口尺寸便有其上限…般來說，當透孔MH的開口 尺寸為介電體窗内讀長的_以下時，微波的溢漏 會明顯變少。例如，使用石英板作為介電體窗52材質 的情況，由於石英内之微波(2.45GHz)的波長為61_， 因此透孔ΜΗ的開口尺寸期望為6mm以下。 201230188 此外’供微波放射之槽孔對54a、54b的開口尺寸 例如長邊為36mm，短邊為6mm。 該實施形態中’光導波路徑通過區域(網孔)54(;係 自微波傳送線路58的同軸管66分離獨立。於是，光導 波路徑通過區域(網孔)54c的口徑便可在不會對輻射狀 槽孔天線55之電磁波放射特性的均勻性造成影響之範 圍内選擇任意尺寸，通常只要選擇在1〇mm〜2〇mm左右 即可。 該實施形態中，網狀透孔MH的其他特徵為於光導 波路徑通過區域54c内，隔著相鄰接之透孔MH的格子 部分或遮光部TD的上面會如圖3B所示般地形成為圓 形凸面。 如此地，當遮光部TD的上面為圓形凸面時，從正 上方入射之偵測光LB便不會反射至垂直上方而是會斜 向地反射，因此便可減少從遮光部1[]〇返回到偵測頭1〇2 而成為SN比降低的原因之逑失光線。此亦大大地有助 於提高光學偵測裝置1〇〇的偵測精確度。 圖4係顯示於該實施形態中，在槽孔板μ製作上 述網狀透孔MH之較佳方法。此外，槽孔板科的材質 為了確保良好的電氣傳導度，較佳係於表面施有鍍金之 導體(例如銅或鐵·鎳合金”特別是鐵_鎳合金由於線膨 脹率低’因此可抑制槽孔板的位移。 首先，如圖4(A)、（B)所示，於槽孔板54上所設定 之光導波路徑通過區域54c處藉由例如沖孔加工來形成 20 201230188 網狀透孔ΜΗ。此階段中，光導波路徑通過區域54(；的 格子部分仍為平坦面《接下來，將槽孔板54的光導波 路徑通過區域54c浸潰在蝕刻液後’如圖4(c)所示般地 各透孔MH邊緣部的角部便會被削成圓形，甚至格子部 分的上面會被整體地削成圓形而成為凸面。蝕刻液可使 用例如氧化劑、無機鹽及含有氯離子之藥液。此外，雖 然光導波路徑通過區域54c的内面（下面）處之格子部分 或遮光部的表面被削成圓形亦可，但若非如此(仍是平 坦面）的話亦不會有特別的問題。 由於該貫施形態之光學偵測裝置100係如上所述 地，為了供偵測用光導波路徑104通過而於導體的槽孔 板54形成有網狀透孔；^]^，因此微波便會在網狀透孔 MH部位處’而與在除了槽孔對54a、54b之其他的槽 孔板部位處同樣地往輻射方向（不會溢漏至外部)順暢地 傳輸。藉此’便不會對輻射狀槽孔天線55之電磁波放 射特性的均勻性(甚至對電漿密度的均勻性)造成影響， 而可建構出適於傳輸非同調性且大範圍（多種波長）的偵 測光之偵測用光導波路徑1〇4。槽孔板54上之光導波 路徑通過區域(網孔撕的位置設定自由度很大，基本 上可將導波路徑通過區域(網孔)54c設置在同軸管66的 徑向外側且不會干擾到槽孔對54a、54b之任意位置處。 &再者，該光學偵測裝置100係如上所述地，於介電 =52及介電體板56 +，以相對於短波長光線(特別 是紫外線)而透光率高之合成石英來構成偵測用光導波 21 201230188 路徑104所通過之部分52a、56a，因此可更加提高使用 含有大範圍（例如185nm〜785nm)的多種波長之非同調 性偵測光LB及反射光HB之膜厚偵測的精確度。 圖5係顯示合成石英與熔融石英之透光率的波長 依存性。如圖所示，熔融石英的透光率在27〇nm以上 的波長帶域中雖為90%以上，但若波長短於27〇mn便 會降低，特別是當短於200nm時會明顯降低（降低至 50%以下）。相對於此，合成石英的透光率則會遍佈偵測 光LB及反射光HB的全波長帶域（185nm〜785nm)而集 中在85%〜92%的範圍内，顯示高一致性且穩定。 合成石英的缺點為價格較高。但此實施形態中，只 在偵測用光導波路徑1〇4所通過之部分52a、56a局部 2使用合成石英。特別是，具有大厚度(體積)之介電體 除了光導波路徑1〇4之區域52a以外，其餘的大 邛刀52b係由價錢較便宜的熔融石英所構成，因此不會 有成本過向之情況。而介電體板56亦是同樣地。 此外，於介電體窗52中，熔融石英部分52b與合 成石英。卩分52a的交界可藉由例如熔接來加以真空密 ^由於介電體板56中不需真空密封，因此亦可只在 板:供偵測用光導波路徑1〇通過而形成於熔融石英的 人56b之圓形孔洞嵌入有口徑相同於光導波路徑1〇4 &成石英的小圓板56a。 6係顯示偵測本體108内的結構例。該實施形態 予偵測裝置100為了能夠在原位(in-situ)偵測半導 22 201230188 體晶圓w表面之被加工膜的膜厚，係於偵測本體1〇8 内具備有光源130、感光部132及侦測電路134。 光源130係具有例如_素燈或氙氣燈，可產生至少 185nm〜785nm帶域之多種波長的偵測光LB。光源13〇 係透過光學透鏡(未圖示）而光學性地結合於光纖1〇6的 往路光纖106a ’並依據來自控制部94之控制訊號RSa 而開啟(On)或關閉（Off)。 感光部132具有例如光電二極體等光電轉換元 件，係將經由光纖106的復路光纖106b所傳送而來之 來自半導體晶圓W表面的反射光hb分解成 185nm〜785nm帶域内之多種光譜，每個光譜會產生顯 示反射光強度（即反射率）之電氣訊號(反射率訊號Shb)。 偵測電路134係具有參考設定部136、比較判定部 138及偵測輸出部140。參考設定部136係將控制部94 提供之各種設定值RSb所包含的偵測用基準值或參考 數據Rhb提供給比較判定部138。膜厚偵測的情況，參 考數據Rhb係依據從感光部132獲得之光譜反射率訊號 Shb所具有的特定屬性而提供設定值或基準值。 比較判定部138係會將從感光部132所接收的光譜 反射率訊號SHB與參考數據rhb作比較(對照），當兩者 Shb、rhb之間特定屬性的值或特性一致或近似時，則輸 出顯示半導體晶圓W表面之被加工膜的膜厚到達設定 值(或事先讀取而在特定時間後到達設定值)之偵測資訊 或偵測結果。然後’從偵測輸出部140輸出上述要旨的 23 201230188 偵測訊號MS，則控制部94(圖1)便會對應於該偵測訊 號MS來進行蝕刻製程的停止或切換。 可適當地使用此實施形態之光學偵測裝置100的 膜厚偵測功能之蝕刻製程的一例為例如於M〇s電晶體 的製造步驟中所具有的截刻步驟，其係用以形成 LDD(Lightly Doped Drain)構造或極淺接合構造的側壁。 圖7係顯示此實施形態之姓刻步驟的順序。此外， 在蝕刻前，如圖7(a)所示，半導體晶圓w表面係藉由 CVD(Chemical Vapor Deposition)法而形成有 Si02 膜 142。此處’閘極電極146下層的薄膜144為閘極絕緣 膜，係例如膜厚5nm左右的熱氧化膜0丨〇2膜）。閘極電 極146兩側的基板表面係注入有不純物的離子。 此實施形態中用來形成侧壁之蝕刻步驟如圖7(b) 所示，係由使得除了閘極電極14 6上及其兩側的側壁部 分以外之Si〇2膜142的殘膜膜厚直到成為設定值THs 為止全面性地進行蝕刻之第1蝕刻步驟，與如圖7(c)所 示，使側壁142w殘留在閘極電極146兩側而將Si〇2 膜142的殘膜直到完全地去除為止全面性地進行飾刻 之第2蝕刻步驟所構成。 第1蝕刻步驟係依例如以下配方來進行異向性強 的触刻。86 is ejected slightly horizontally toward the center of the processing chamber 1 and diffuses into the plasma. The I control unit 94 includes a microcomputer that can control various parts of the plasma etching apparatus (for example, the exhaust unit 26, the high-frequency power source 3, the electrostatic chuck % switch 42, the microwave generator 60, and the processing gas supply unit 8 The individual operation of the heat transfer gas supply unit (not shown), the optical detection device 1 described later, and the like, and the overall operation of the device. In the microwave electro-convergence device, the etching is performed by first placing the inter-valve 28 in an open state to place the object to be processed (semi-conducting into the processing chamber H) and to be placed on the electrostatic chuck 36. Then, after the interval 28 is turned off, the process gas supply unit 8 () is introduced into the process chamber 1G at a specific flow rate by a process gas (i.e., a gas mixture). Further, 'the heat transfer gas supply unit supplies the heat transfer gas to the contact interface of the static electricity 36 and the semiconductor wafer W, and the switch 42 is used to seal the heat transfer gas by the electrostatic adsorption force of the electrostatic chuck 36. The above contact interface. Then, the microwave generator 6 is turned on, and the microwave outputted from the microwave generator 60 at a specific power is transmitted through the microwave transmission path 58 to the long wire (4) slot antenna 55, and then the microwave is radiated from the radial slot antenna 55. The radiation to the processing chamber ι〇^^ turns on the high-frequency power source 30 and outputs the bias voltage=frequency at a specific power, and the high-ship material element 32 and the power supply rod 3 are in the crystal seat 12. The gas is discharged from the side wall gas discharge port of the processing gas supply unit 80 to the processing chamber 10, and the age of the gas is such that the electric field of the wave causes the gas particles to be ionized to generate the electric charge, and the microwave becomes a dielectric The surface of the body window 52 and the surface of the body is transferred to the surface of the radiation direction with the plasma. In this way, the "generated under the dielectric window 52" will diffuse, and below, the processed film of the main surface of the semiconductor wafer w is subjected to plasma isotropic radicals and ion irradiation. Vertically engraved. 201230188 The microwave plasma etching device is provided with a condition that the etching process is performed in the processing chamber (for example, the film thickness of the film to be processed may decrease over time) 'can be in-situ or in-situ optically An optical detecting device for detecting the film thickness of the film to be processed. The optical detecting device 1 is disposed on the inner side of the semiconductor wafer W placed on the wafer holder 12 so as to be closer to the inner side in the radial direction than the outer side of the coaxial tube 66. The optical detecting device 100 has a detecting head 1 2 disposed on the cover 72, a detecting light guide wave path 104, and a detecting body optically coupled to the detecting head 1〇2 through the optical fiber 106. 108. The detecting optical waveguide path 〇4 is disposed from the detecting head 102 vertically below the vertical straight cover 72, the dielectric plate 56, the slot plate 54, and the dielectric window 52. 2 shows the structure of the detecting head 1〇2 and the optical waveguide path 1〇4. The detecting head 102 has a sealable cover case 110 composed of a conductor (for example, aluminum), and the case 110 is provided with, for example, a light reflector 112 and an optical lens 114 as optical components for detection. The light reflector 112 is constructed, for example, as shown in the drawing, and has approximately 45 in the casing 110 opposite to the end surface of the end fiber 1〇6 and obliquely downward. Sloped surface. The detection light LB horizontally emitted from the optical fiber 106 is reflected downward vertically downward at the front light reflector 112 and incident on the semiconductor wafer W directly below through the optical waveguide 104. On the other hand, the reflected light HB emitted from the semiconductor wafer w irradiated with the detection light lb toward the vertical direction collides with the light reflection plate 112 through the optical waveguide path 〇4, and is horizontally directed from the light reflection body 112. 201230188 is reflected and incident on the optical fiber 106. The optical lens 114 allows the detection light LB emitted from the optical fiber 106 to be radiated toward the light reflector 112 at a certain diffusion angle and causes the reflected light HB from the light reflector 112 to be concentrated to be introduced into the optical fiber 106. The optical lens 114 can be integrally mounted at the front end of the optical fiber 106 as shown, or can be disposed at a specific position separated from the optical fiber 106. The optical fiber 106 is composed of, for example, a 2-core FO (Fan-out) optical fiber, and a forward optical fiber 16a for transmitting the inner side of the detecting light LB and a returning optical fiber i〇6b for transmitting the outer side of the reflected light HB. - Body knots are integrated. The detection 祀 LB is emitted from the end face of the inner path fiber i 〇 6a, and the reflected light HB is incident on the end face of the outer bypass fiber 1 〇 6b. The optical fiber 106 is connected to the detecting head 1 2 by being housed in a sleeve 116 which is hermetically mounted to a conductor (e.g., aluminum) of the casing 11 (). The inside of the detecting head 102 is electromagnetically shielded from the outside by the housing 110 and the optical fiber sleeve 116 formed of a conductor as described above. Therefore, even if the microwave enters the detecting head 1〇2 through the optical waveguide path 104 from the dielectric plate 56 or the radial slot antenna 55, it does not leak out of the detecting head 102. Furthermore, the indoor space of the detecting head 102 is blocked from the atmospheric space, and the blowing gas (for example, nitrogen (N2) gas) introduced from the purge gas supply port 8 provided on the upper surface of the casing 110 is used. Blow it out often. Here, the purge gas supply port 118 is connected to the purge gas supply source 122 through the gas supply pipe 12'. In this embodiment, in order to fully perform the blowing of the detecting head 1 2, the 2012 102188 is clean, and the bottom of the detecting head 102 is provided with a thick-walled base plate 124 which is hermetically provided with a conductor (for example, aluminum). The base plate 124 is formed with a through hole 124a' continuous with the through hole of the cover plate 72 at a passing position of the optical waveguide path 104. The exhaust flow path 124b is formed to be connected to the exhaust flow path 72b of the cover plate 72. . The outlet of the exhaust runner 124b is connected to the exhaust portion 128 constituted by, for example, an exhaust fan through the exhaust pipe 126. The through hole 72a constituting the optical waveguide path 104 is connected to the exhaust flow path 72b through the connecting passage 72c provided at the lower end. The purge gas (N2 gas) supplied from the purge gas supply port 118 into the casing 11 is passed through the through hole l24a-> through hole of the cover plate 72 after filling the casing 110. 72a - Connection passage 72c - Exhaust flow passage 72b - The closed space ' of the exhaust passage 124b of the base plate 124 is again discharged to the external exhaust portion 128. In the optical detecting device of the embodiment, the detecting light lb for detecting the film thickness of the processed film of the semiconductor wafer W is not a single-wavelength homotactic laser light, but is used in a large range ( For example, 185 nm to 785 nm) non-coherent lights of various wavelengths. Here, since the short wavelength (especially 200 nm or less) contained in the detection light LB is easily absorbed by oxygen, it is significantly degraded if exposed to the atmosphere. In the present embodiment, as described above, since the space inside the detecting head 102 and even the space for detecting the optical waveguide 104 are often blown off by the purge gas (N2 gas), after being emitted from the optical fiber 106, The detection light LB, even the reflected light HB introduced before the optical fiber 106, does not come into contact with the atmosphere, and is not easily degraded. Thereby, the detection accuracy of the optical detection 201230188 measuring device 100 can be improved. In order to simultaneously consider the detection accuracy of the optical detection device 100 and the uniformity of the electromagnetic wave radiation characteristics of the radial slot antenna 55, It is also important to detect the structure in which the mesh-shaped through-hole MH is formed at the portion or region 54c through which the optical waveguide path 104 passes in the orifice plate 54. As shown in Fig. 3A, the optical waveguide path of the slot plate 54 is distributed through the region 54c (mesh) with a specific shape and a specific size of the through hole MH at a specific density. In order to improve the detection accuracy, the aperture ratio of the mesh 5 is preferably as large as 70% or more. Here, in order to increase the aperture ratio of the mesh hole 54c, it is preferable that the opening shape of the through hole 为 is polygonal and is relatively round, and it is preferably a positive hexagon (i.e., a honeycomb structure). According to the honeycomb structure, for example, the length of one side of the through hole is j (mm), the length of the opposite side is k (mm), and when j = 1 〇 mm, and k = 1.73 mm, the aperture ratio is 76.3%. When j=〇8mm and k=i 39匪, the aperture ratio is 8%. However, when j = 〇 5 coffee, k = screening _, the aperture ratio will be reduced to 60.3%. Thus, in the light guiding path passage area (mesh) 54c of the slot plate 54, if the size of the through hole MH is larger, a larger opening ratio is obtained. However, in order to make the microwave leak less from the mesh, the opening size of the through hole has an upper limit. Generally, when the opening size of the through hole MH is less than or equal to the read length in the dielectric window, the microwave The spill will be significantly less. For example, when a quartz plate is used as the material of the dielectric window 52, since the wavelength of the microwave (2.45 GHz) in the quartz is 61_, the opening size of the through hole is desirably 6 mm or less. 201230188 Further, the opening size of the pair of slots 54a, 54b for microwave radiation is, for example, 36 mm on the long side and 6 mm on the short side. In the embodiment, the optical waveguide path passing region (cell) 54 is separated from the coaxial tube 66 of the microwave transmission line 58. Thus, the diameter of the optical waveguide path passing through the region (mesh) 54c is not correct. The uniformity of the electromagnetic wave radiation characteristics of the radial slot antenna 55 is selected to be an arbitrary size, and it is usually selected to be about 1 mm to 2 mm. In this embodiment, other features of the mesh through hole MH are selected. In the light guide path passage region 54c, the lattice portion of the adjacent through hole MH or the upper surface of the light shielding portion TD is formed into a circular convex surface as shown in FIG. 3B. Thus, when the light shielding portion TD is above In the case of a circular convex surface, the detection light LB incident from directly above is not reflected vertically but obliquely reflected, thereby reducing the return from the light blocking portion 1 [] 到 to the detecting head 1 〇 2 The loss of light due to the decrease in the SN ratio greatly contributes to the improvement of the detection accuracy of the optical detecting device 1 . FIG. 4 shows that in the embodiment, the mesh is fabricated in the slot plate μ. a preferred method of the through hole MH. In addition, the slot In order to ensure good electrical conductivity, the material of the board is preferably a gold-plated conductor (such as copper or iron-nickel alloy), especially iron-nickel alloy, which has a low coefficient of linear expansion, thereby suppressing the slot plate. First, as shown in Figs. 4(A) and (B), the optical waveguide path set on the slot plate 54 passes through the region 54c to form a 20 201230188 mesh through hole by, for example, punching. In the stage, the optical waveguide path passes through the region 54 (the lattice portion is still a flat surface. Next, the optical waveguide path of the slot plate 54 is immersed in the etching liquid through the region 54c] as shown in Fig. 4(c). The corners of the edge portions of the through holes MH are cut into a circular shape, and even the upper portion of the lattice portion is integrally cut into a circular shape to become a convex surface. For example, an oxidizing agent, an inorganic salt, and a drug containing a chloride ion can be used as the etching liquid. Further, although the surface of the light guide path passing through the inner surface (lower surface) of the region 54c or the surface of the light shielding portion may be rounded, there is no particular problem if it is not (still a flat surface). Due to the optics of the form As described above, the measuring device 100 is formed with a mesh through hole in the slot plate 54 of the conductor for the passage of the detecting optical waveguide 104. Therefore, the microwave is at the portion of the mesh through hole MH. 'And in the same direction as the other slot plate portions of the slot pairs 54a, 54b, the radiation direction (no leakage to the outside) is smoothly transmitted. Thus, the radial slot antenna 55 is not The uniformity of the electromagnetic radiation characteristics (even the uniformity of the plasma density) is affected, and the optical waveguide path for detecting non-coherent and wide-range (multiple wavelengths) detection light can be constructed. The optical waveguide path passage area on the slot plate 54 (the position of the mesh tearing is set to a large degree of freedom, and the guided wave path passing region (mesh) 54c can be basically disposed on the radially outer side of the coaxial tube 66 without It interferes with any position of the pair of slots 54a, 54b. Furthermore, the optical detecting device 100 is a synthetic quartz having a high transmittance with respect to short-wavelength light (especially ultraviolet light) at a dielectric = 52 and a dielectric plate 56 + as described above. Since the detecting optical waveguide 21 201230188 passes through the portions 52a and 56a of the path 104, the film thickness of the non-coherent detecting light LB and the reflected light HB including a plurality of wavelengths (for example, 185 nm to 785 nm) can be further improved. The accuracy of the detection. Fig. 5 is a graph showing the wavelength dependence of the transmittance of synthetic quartz and fused silica. As shown in the figure, the transmittance of fused silica is 90% or more in the wavelength band of 27 〇 nm or more, but it is lowered if the wavelength is shorter than 27 〇mn, especially when it is shorter than 200 nm ( Reduced to below 50%). On the other hand, the light transmittance of the synthetic quartz is spread over the entire wavelength band (185 nm to 785 nm) of the detection light LB and the reflected light HB, and is concentrated in the range of 85% to 92%, showing high uniformity and stability. The disadvantage of synthetic quartz is its high price. However, in this embodiment, synthetic quartz is used only in portions 52a and 56a through which the detecting optical waveguide path 1〇4 passes. In particular, the dielectric body having a large thickness (volume) other than the region 52a of the optical waveguide path 1〇4, the other large burrs 52b are composed of cheaper fused silica, so there is no cost overrun. Happening. The dielectric plate 56 is also the same. Further, in the dielectric window 52, the fused silica portion 52b is combined with quartz. The boundary of the portion 52a can be vacuum-sealed by, for example, welding. Since the dielectric plate 56 does not require vacuum sealing, it can be formed only on the plate: the optical waveguide for detecting light passes through the fused silica. The circular hole of the person 56b is embedded with a small circular plate 56a having the same diameter as the optical waveguide path 1〇4 & quartz. The 6 series shows an example of the structure in the detection body 108. In order to be able to in-situ detect the film thickness of the film to be processed on the surface of the semiconductor wafer w on the surface of the semiconductor wafer w, the detection device 100 is provided with the light source 130 in the detecting body 1〇8. The photosensitive portion 132 and the detecting circuit 134. The light source 130 has, for example, a lamp or a xenon lamp, and can generate detection light LB of a plurality of wavelengths in a band of at least 185 nm to 785 nm. The light source 13 is optically coupled to the forward optical fiber 106a' of the optical fiber 1 through an optical lens (not shown) and turned on (Off) or off (Off) in accordance with the control signal RSa from the control unit 94. The light-receiving portion 132 has a photoelectric conversion element such as a photodiode, and the reflected light hb from the surface of the semiconductor wafer W transmitted through the return optical fiber 106b of the optical fiber 106 is decomposed into a plurality of spectra in a band of 185 nm to 785 nm. The spectrum produces an electrical signal (reflectance signal Shb) that shows the intensity of the reflected light (ie, reflectivity). The detection circuit 134 has a reference setting unit 136, a comparison determination unit 138, and a detection output unit 140. The reference setting unit 136 supplies the comparison reference value or reference data Rhb included in the various setting values RSb supplied from the control unit 94 to the comparison determination unit 138. In the case of film thickness detection, the reference data Rhb provides a set value or a reference value based on a specific property of the spectral reflectance signal Shb obtained from the light-receiving portion 132. The comparison determining unit 138 compares (by contrast) the spectral reflectance signal SHB received from the light receiving unit 132 with the reference data rhb, and outputs the value or the characteristic of the specific attribute between the two Shb and rhb. The detection information or the detection result indicating the film thickness of the film to be processed on the surface of the semiconductor wafer W reaches a set value (or a predetermined value after a predetermined time is reached). Then, the 23 201230188 detection signal MS of the above-mentioned subject is outputted from the detection output unit 140, and the control unit 94 (Fig. 1) performs the etching process to stop or switch corresponding to the detection signal MS. An example of an etching process in which the film thickness detecting function of the optical detecting device 100 of this embodiment can be suitably used is, for example, a cutting step in the manufacturing process of the M〇s transistor, which is used to form an LDD ( Lightly Doped Drain) The side wall of a constructed or extremely shallow joint construction. Figure 7 is a diagram showing the sequence of the surname steps of this embodiment. Further, before etching, as shown in Fig. 7(a), a SiO 2 film 142 is formed on the surface of the semiconductor wafer w by a CVD (Chemical Vapor Deposition) method. Here, the film 144 under the gate electrode 146 is a gate insulating film, for example, a thermal oxide film of a film thickness of about 5 nm. The surface of the substrate on both sides of the gate electrode 146 is impregnated with ions of impurities. The etching step for forming the sidewalls in this embodiment is as shown in Fig. 7(b), and is a film thickness of the residual film of the Si〇2 film 142 except for the sidewall portions on the gate electrode 146 and both sides thereof. The first etching step is performed until the set value THs is comprehensively etched, and as shown in FIG. 7(c), the sidewall 142w remains on both sides of the gate electrode 146, and the residual film of the Si〇2 film 142 is completely completed. The second etching step is performed in a comprehensive manner to remove the ground. The first etching step is performed by the following formulation, for example, to perform an anisotropic strong touch.

蝕刻氣體：Ar/02/CH2F2=l〇〇〇/2/5sccm 處理室内壓力：20mTorr 微波功率：2000W 24 201230188Etching gas: Ar/02/CH2F2=l〇〇〇/2/5sccm Processing chamber pressure: 20mTorr Microwave power: 2000W 24 201230188

偏壓用高頻電功率：120W 第2蝕刻步驟係依例如以下配方來進行異向性弱 的触刻。 蝕刻氣體：Ar/CH2F2=360/20sccm 處理室内壓力：lOOmTorrHigh-frequency electric power for biasing: 120 W The second etching step is performed by a formulation having the following anisotropic weakness. Etching gas: Ar/CH2F2=360/20sccm Processing chamber pressure: lOOmTorr

微波功率：2000WMicrowave power: 2000W

偏壓用高頻電功率：75W 上述蝕刻步驟中，為了不會造成圖8A所示般的凹 部（recess)或圖8B所示般的足部（footing),而作成圖7(c) 所示般的理想侧壁構造，上述膜厚設定值THs較佳係選 擇基板快要露出前的小尺寸，例如選擇為lnm。 該實施形態之微波電漿蝕刻裝置當進行上述2階 段蝕刻製程之情況，係藉由光學偵測裝置10〇的膜厚伯 測功能來檢測出或推定第1蝕刻步驟中Si〇2膜142的 膜厚到達設定值THst時間點，而在該時間點停止第i 蝕刻步驟，接著開始第2蝕刻步驟。 於此情況下，光學偵測裝置100會在第1蝕刻步驟 進行當中開啟光源130，來使偵測光LB經由偵測頭 102、光導波路徑104而照射在晶座12上的半導體晶圓 W表面。然後，將由光導波路徑104及偵測頭1〇2而引 入之來自半導體晶圓W表面的反射光HB利用感光部 132來進行光電轉換，再藉由施予偵測電路134的訊號 處理，便可即時地偵測半導體晶圓W表面之Si〇2膜142 的膜厚隨著蝕刻製程的時間經過而減少之樣態。 25 201230188 圖9係顯示於光學偵測裝置100中，將 185nm〜785nm帶域之偵測光LB照射在半導體晶圓W 表面的Si02膜，藉此所獲得之反射光HB的光譜反射率 的波長依存特性會對應於Si02膜的膜厚而改變之特性。 如圖所示，Si〇2膜的情況，大致來說，當膜厚愈薄 則在全波長帶域中反射率愈低，特別是在200nm以下 的短波長帶域中，膜厚依存特性的差會變得顯著。因 此，根據例如200nm附近之有限波長帶域的反射率特 性’或根據大範圍（185nm〜785nm)之全波長帶域的反射 率特性圖形(波形），便可檢測或推定出Si〇2膜142的膜 厚成為設定值THS(1 nm)之時間點。 該實施形態之反射率的波長依存特性（圖9)係以除 了閘極電極146的側壁而Si〇2膜142被完全地去除之 狀態（亦即基板(下層）為露出之狀態（同等於圖7(c)之狀 態))下所獲得時的反射率作為標準化之基準值(1 。如 此地，藉由以飯刻對象的薄膜被完全地去除時之下層所 獲得的反射率作為基準值，則即便是lnm左右之非常 薄的膜厚，仍能夠高精確度地彳貞測。 此外’於上述2階段的餘刻步驟中，停止第2敍刻 步驟之時間點(終點檢出）可利關如計時器功能，或對 電聚光進行光譜分析來加崎測之公知的手法(發光偵 測）。此情況下，亦可將光學偵測裝i 1〇〇的光導波路 徑104利用於發光_用窗。如此地，該實施形態之光 學值測裝置刚便可利用於各種形態的膜賴測或其 26 201230188 他光學性偵測。 以上，雖已說明本發明較佳實施形態，但本發明不 限於上述實施形態，可在其技術思想範圍内而有其他實 施形態或做各種變化。 例如圖ίο所示，亦可將構成微波傳送線路58的同 軸管66之内部導體68構成為中空管，而將該中空管 68使用在處理氣體供應部8〇的中心氣體供應道。此情 況下，係設置有與中空管68為連續地且貫穿輻射狀槽 孔天線55中心之氣體喷出口 15〇。輻射狀槽孔天線％ 的中心乃輻射狀導波道的中心，縱使於該場所形成有氣 體喷出用的貫穿孔150，仍不會對輻射狀槽孔天線55 之電磁波放射特性的均勻性造成影響，且不會妨礙到光 學偵測裝置100或有任何不良的影響。 於該結構例之處理氣體供應部80中，從處理氣體 供應源82所送出之處理氣體的一部分會如上所述地通 過氣體供應管88而從處理室侧壁的氣體喷出孔86 被導入至處理室1〇内。又，從處理氣體供應源82所送 出之處理氣體的其他部分則會通過氣體供應管152及 同軸管66的内部導體68而從頂板中心部的氣體喷出孔 150被導入至處理室10内。此外，氣體供應管152中 途係設置有MFC(質流控制器）154及開閉閥156。 構成光學偵測裝置1〇〇之各部亦可有各種變化。例 如圖11所示，亦可為將輻射狀槽孔天線55周圍所設置 之偵測用光導波路徑104分割為往路用（偵測光lb專用） 27 201230188 光導波路徑104L與復路用（反射光jjb專用）光導波路徑 104R之結構。此情況下，介電體窗52、槽孔板54、介 電體板56及蓋板72中，往路用（偵測光LB專用）的光 導波路徑104L所通過之位置處或部位與復路用（反射光 HB專用）光導波路控104R所通過之位置處或部位係分 別地各自設置有合成石英52a、網狀透孔MH、合成石 英56a、貫穿孔72a。 又，偵測頭102中，係針對往路用（偵測光LB專用） 的光導波路徑104L而個別地設置有光學系統（112L、 114L)及殼體110L，且針對復路用（反射光HB專用）的 光導波路徑104R而個別地設置有光學系統（112R、U4R) 及殼體110R。 光纖106之往路光纖i〇6a係透過導體套116L而安 裝在往路侧的殼體110L，復路光纖1〇6b則係透過導體 套116R而結合於復路側的殼體u〇Re又，殼體u〇L、 110 R係從共通的吹淨氣體供應源丨2 2透過個別的氣體 供應官120L、120R及氣體導入口 118L、118R而供應 有吹淨氣體。 ~ 此外，往路用（偵測光LB專用）光導波路徑1〇4乙與 復路用（反射光HB專用）光導波路徑1〇4R可形成為相對 於鉛直線呈現某種程度的傾斜之v字狀，而殼體u〇L、 110R亦可為相互分離。 又，偵測頭102與偵測本體1〇8之間亦可省略光纖 106，而使用透鏡等其他的光傳送系統。 28 201230188 上述實施形態之微波電漿處理裝置中之微波放電 機構的結構，特別是微波傳送線路58及輻射狀槽孔天 線55僅為其中一例，而亦可使用其他方式或形態的微 波傳送線路及槽孔天線。 上述實施形態中，介電體窗52係於供偵測用光導 波路徑104通過之部分52a使用相對於短波長(特別是 200nm以下）而透光率高的合成石英。但當偵測光LB未 含有上述短波長的情況則亦可於該光導波路徑通過部 分52a使用熔融石英或其他的透明介電體。又，介電體 窗52中’除了光導波路徑通過部分52a以外的部分亦 可使用氧化鋁等非透明的介電體。 由於上述實施形態之微波電漿蝕刻裝置可在無磁 場下產生微波電漿，因此不需在處理室1〇周圍設置永 久磁石或電子線圈等的磁場形成機構，而為簡易的裝置 結構。再者’本發明亦可適用於利用電子迴旋加速共振 (ECR : Electron Cyclotron Resonance)之電毁處理裝置。 本發明不限於上述實施形態之微波電漿蝕刻裝 置，而亦可適用於電漿CVD、電漿ALD、電漿氧化、 電漿氮化、電漿植入、濺鍍等其他的微波電漿處理裝 置。又，本發明之被處理基板不限於半導體晶圓，而亦 可為平板顯示器用之各種基板或遮罩、CD基板、印刷 基板等。 【圖式簡單說明】 29 201230188 圖1係顯示本發明一實施形態之微波電漿處理裝 置的結構之圖式。 圖2係顯示圖1之一實施形態中，電漿處理裝置所 内建之光學偵測裝置的偵測頭及光導波路徑的結構之 縱截面圖。 圖3A係顯示實施形態之光學偵測裝置中，為了構 成光導波路徑而形成於槽孔板之網狀透孔的結構之平 面圖。 圖3B係顯示上述槽孔板的網狀透孔所分佈之區域 中’遮光部的縱截面構造之截面圖。 圖4係顯示於上述槽孔板製作網狀透孔之方法的 步驟順序之圖式。 圖5係顯示合成石英及、熔融石英之透光率的波長 依存性之圖式。 圖6係顯示上述光學偵測裝置之偵測本體内的結 構之方塊圖。 圖7係顯示為了使用圖1之電漿處理裝置來形成 LDD構造的侧壁所進行之蝕刻步驟的順序之截面圖。 圖8A係顯示LDD構造之側壁形成中，不良蝕巧妗 果的一例（凹部）之圖式。 Χ 圖8Β係顯示LDD構造之側壁形成中，不良餘 果的一例（足部）之圖式。 Λ結 圖9係顯示Si〇2膜處反射率的波長依存特性 30 201230188 圖10係顯示圖1之電漿處理裝置的一變形例之圖 式。 圖11係顯示顯示實施形態之光學偵測裝置中偵測 頭及光導波路徑的一變形例之截面圖。 【主要元件符號說明】 CW 冷卻水 HB 反射光 LB 4貞測光 MH 透孔 MS 偵測訊號 Rhb 參考數據 RSa 控制訊號 RSb 設定值 Shb 光譜反射率訊號 TD 遮光部 THS 設定值 W 半導體晶圓 10 真空處理室（處理容器） 12 晶座（下部電極） 14、16 支撐部 18 排氣流路 20 隔板 22 排氣埠 31 201230188 24 26 27 28 30 32 34 36 36a 36b 38 40 42 43 44 46、 50 52 52a 52b 54 54a 54c 55 排氣管 排氣裝置 搬出入口 閘閥 RF偏壓用尚頻電源 匹配單元 供電棒 靜電夾具 電極 ' 36c 絕緣膜 聚焦環 直流電源 開關 被覆線 冷媒室 48 配管 氣體供應管 介電體窗(頂板） 合成石英部分（光導波路徑通過部分) 熔融石英部分 槽孔板 、54b 槽孔對 光導波路徑通過區域（網孔） 槽孔天線 32 201230188 56 介電體板(延遲板） 56a 合成石英部分（光導波路徑通過部分) 56b 熔融石英部分 58 微波傳送線路 60 微波產生器 62 導波管 64 導波管-同軸管轉換器 66 同轴管 68 内部導體 70 外部導體 72 蓋板 72a 貫穿孔(光導波路徑通過部分） 72b 排氣流道 72c 連通道 74 流道 76 ' 78 配管 80 處理氣體供應部 82 處理氣體供應源 84 缓衝室 86 側壁氣體喷出孔 88 氣體供應管 90 MFC(質流控制器） 92 開閉閥 94 控制部 33 201230188 100 102 104 104L 104R 106 106a 106b 108 110、 112 112L 114 116 116L 118 118L 120 120L 122 124 124a 124b 126 光學偵測裝置 偵測頭 偵測用光導波路徑 往路用（偵測光LB專用）光導波路徑 復路用（反射光HB專用）光導波路徑 光纖 往路光纖 復路光纖 偵測本體 110L ' 110R 殼體 光反射體 、112R、114L、114R 光學系統 光學透鏡 套筒 、116R導體套 吹淨氣體供應口 、118R氣體導入口 氣體供應管 、120R氣體供應管 吹淨氣體供應源 基底板 貫穿孔 排氣流道 排氣管 34 201230188 128 排氣部 130 光源 132 感光部 134 偵測電路 136 參考設定部 138 比較判定部 140 偵測輸出部 142 Si02 膜 142w 側壁 144 閘極絕緣膜 146 閘極電極 150 氣體喷出口 152 氣體供應管 154 MFC(質流控制器） 156 開閉閥 35High-frequency electric power for biasing: 75 W In the above etching step, in order to prevent the recess as shown in Fig. 8A or the footing as shown in Fig. 8B, it is as shown in Fig. 7(c). The ideal sidewall structure, the film thickness setting value THs is preferably a small size before the substrate is selected to be exposed, for example, 1 nm. In the microwave plasma etching apparatus of this embodiment, when the two-stage etching process is performed, the Si 〇 2 film 142 in the first etching step is detected or estimated by the film thickness detecting function of the optical detecting device 10 〇. The film thickness reaches the set point THst time point, and at this point in time, the i-th etching step is stopped, and then the second etching step is started. In this case, the optical detecting device 100 turns on the light source 130 during the first etching step to cause the detecting light LB to illuminate the semiconductor wafer W on the crystal substrate 12 via the detecting head 102 and the optical waveguide path 104. surface. Then, the reflected light HB from the surface of the semiconductor wafer W introduced by the optical waveguide path 104 and the detecting head 1 〇 2 is photoelectrically converted by the light receiving portion 132, and then subjected to signal processing by the detecting circuit 134. The film thickness of the Si〇2 film 142 on the surface of the semiconductor wafer W can be instantly detected as the etching process time passes. 25 201230188 FIG. 9 is a view showing the wavelength of the spectral reflectance of the reflected light HB obtained by irradiating the SiO of the semiconductor wafer W with the detection light LB of the 185 nm to 785 nm band in the optical detecting device 100. The dependency characteristic changes depending on the film thickness of the SiO 2 film. As shown in the figure, in the case of the Si〇2 film, roughly, when the film thickness is thinner, the reflectance is lower in the full-wavelength band, particularly in the short-wavelength band of 200 nm or less, and the film thickness depends on the characteristics. The difference will become significant. Therefore, the Si〇2 film 142 can be detected or estimated based on, for example, the reflectance characteristic of the finite wavelength band near 200 nm or the reflectance characteristic pattern (waveform) of the full-wavelength band in a wide range (185 nm to 785 nm). The film thickness becomes the time point of the set value THS (1 nm). The wavelength dependence characteristic of the reflectance of this embodiment (Fig. 9) is a state in which the Si〇2 film 142 is completely removed except for the sidewall of the gate electrode 146 (i.e., the substrate (lower layer) is exposed (equivalent to the figure). The reflectance obtained under the state of 7(c))) is used as a reference value for normalization (1. Thus, the reflectance obtained by the lower layer when the film of the rice object is completely removed is used as a reference value, Even if it is a very thin film thickness of about 1 nm, it can be measured with high precision. In addition, in the remaining two steps of the above two steps, the time point (end point detection) of stopping the second quotation step can be improved. For example, the timer function, or the spectral analysis of the electric concentrating light to add the well-known technique (luminescence detection) of the Kazaki test. In this case, the optical waveguide path 104 of the optical detection device can also be utilized for Thus, the optical measuring device of this embodiment can be used for various forms of film sensing or its optical detection. In the above, although the preferred embodiment of the present invention has been described, The present invention is not limited to the above embodiment, Other embodiments or variations are possible within the scope of the technical idea. For example, the inner conductor 68 of the coaxial tube 66 constituting the microwave transmission line 58 may be configured as a hollow tube, and the hollow tube may be formed. 68 is used in the central gas supply path of the process gas supply unit 8A. In this case, a gas discharge port 15 is provided which is continuous with the hollow tube 68 and penetrates the center of the radial slot antenna 55. Radial slots The center of the antenna % is the center of the radial waveguide, and even if the through hole 150 for gas ejection is formed in the place, the uniformity of the electromagnetic radiation characteristics of the radial slot antenna 55 is not affected, and The optical detecting device 100 may be hindered to have any adverse effects. In the processing gas supply portion 80 of this configuration example, a part of the processing gas sent from the processing gas supply source 82 passes through the gas supply pipe 88 as described above. The gas ejection hole 86 from the side wall of the processing chamber is introduced into the processing chamber 1A. Further, other portions of the processing gas sent from the processing gas supply source 82 pass through the gas supply tube 15. 2 and the inner conductor 68 of the coaxial tube 66 is introduced into the processing chamber 10 from the gas ejection hole 150 at the center of the top plate. Further, the gas supply tube 152 is provided with an MFC (mass flow controller) 154 and an opening and closing valve 156 in the middle. The components constituting the optical detecting device 1 can also be variously changed. For example, as shown in FIG. 11, the detecting optical waveguide path 104 provided around the radial slot antenna 55 can be divided into paths. For measuring lb lb) 27 201230188 Optical waveguide path 104L and the structure of the optical waveguide path 104R for re-routing (for reflected light jjb). In this case, the dielectric window 52, the slot plate 54, the dielectric plate 56 and the cover In the case of 72, the position or the portion through which the optical waveguide path 104L for the way (for the detection light LB is used) and the position or the portion through which the optical path 104R for the return path (for the reflected light HB) passes are respectively provided. Synthetic quartz 52a, mesh through hole MH, synthetic quartz 56a, and through hole 72a. Further, in the detecting head 102, the optical system (112L, 114L) and the casing 110L are separately provided for the optical waveguide path 104L for the forward path (for the detection light LB), and are used for the complex circuit (for the reflected light HB). The optical waveguides 104R are individually provided with optical systems (112R, U4R) and a housing 110R. The optical fiber 〇6a of the optical fiber 106 is attached to the casing 110L on the forward side via the conductor sleeve 116L, and the return optical fiber 〇6b is coupled to the casing on the return side by the conductor sleeve 116R. The 〇L and 110R are supplied with the purge gas from the common purge gas supply source 22 through the individual gas supply officers 120L and 120R and the gas introduction ports 118L and 118R. ~ In addition, the optical waveguide path 1〇4B for the path (for detecting light LB) and the optical waveguide path 1〇4R for the complex path (for the reflected light HB) can be formed as a v-shape with a certain degree of inclination with respect to the lead line. The casings u〇L, 110R may be separated from each other. Further, the optical fiber 106 may be omitted between the detecting head 102 and the detecting body 1 to 8, and another optical transmission system such as a lens may be used. 28 201230188 The structure of the microwave discharge mechanism in the microwave plasma processing apparatus of the above embodiment, in particular, the microwave transmission line 58 and the radial slot antenna 55 are only one example, and other methods or forms of microwave transmission lines and Slot antenna. In the above embodiment, the dielectric window 52 is made of a synthetic quartz having a high transmittance with respect to a short wavelength (especially 200 nm or less) in a portion 52a through which the optical waveguide 104 for detection passes. However, when the detection light LB does not contain the short wavelength described above, fused silica or another transparent dielectric may be used in the optical waveguide passage portion 52a. Further, a portion other than the optical waveguide passage portion 52a in the dielectric window 52 may be a non-transparent dielectric such as alumina. Since the microwave plasma etching apparatus of the above embodiment can generate microwave plasma in a non-magnetic field, it is not necessary to provide a magnetic field forming mechanism such as a permanent magnet or an electron coil around the processing chamber 1b, and it is a simple device structure. Furthermore, the present invention is also applicable to an electro-destruction processing apparatus using Electron Cyclotron Resonance (ECR). The invention is not limited to the microwave plasma etching apparatus of the above embodiment, but can also be applied to other microwave plasma processing such as plasma CVD, plasma ALD, plasma oxidation, plasma nitriding, plasma implantation, sputtering, and the like. Device. Further, the substrate to be processed of the present invention is not limited to a semiconductor wafer, but may be various substrates or masks for flat panel displays, a CD substrate, a printed substrate, and the like. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a view showing the configuration of a microwave plasma processing apparatus according to an embodiment of the present invention. Fig. 2 is a longitudinal cross-sectional view showing the structure of a detecting head and an optical waveguide of the optical detecting device built in the plasma processing apparatus in an embodiment of Fig. 1. Fig. 3A is a plan view showing the structure of a mesh-shaped through hole formed in a slot plate for forming an optical waveguide in the optical detecting device of the embodiment. Fig. 3B is a cross-sectional view showing the longitudinal cross-sectional structure of the light-shielding portion in the region where the mesh-shaped through holes of the slot plate are distributed. Fig. 4 is a view showing a sequence of steps of a method of forming a mesh through hole in the above-mentioned slot plate. Fig. 5 is a graph showing the wavelength dependence of the transmittance of synthetic quartz and fused silica. Fig. 6 is a block diagram showing the structure of the above-described optical detecting device in the detecting body. Figure 7 is a cross-sectional view showing the sequence of etching steps performed to form the sidewalls of the LDD structure using the plasma processing apparatus of Figure 1. Fig. 8A is a view showing an example (concave portion) of a poor etching result in the formation of the side wall of the LDD structure. Χ Fig. 8 shows a diagram of an example (foot) of the defective side in the formation of the side wall of the LDD structure. Fig. 9 shows the wavelength dependence characteristic of the reflectance at the Si〇2 film. 30 201230188 Fig. 10 is a view showing a modification of the plasma processing apparatus of Fig. 1. Fig. 11 is a cross-sectional view showing a modification of the detecting head and the optical waveguide path in the optical detecting device of the embodiment. [Main component symbol description] CW Cooling water HB Reflected light LB 4贞 Metering MH Through hole MS Detection signal Rhb Reference data RSa Control signal RSb Setting value Shb Spectral reflectance signal TD Shading part THS Setting value W Semiconductor wafer 10 Vacuum processing Room (processing container) 12 Crystal holder (lower electrode) 14, 16 Support portion 18 Exhaust flow path 20 Separator 22 Exhaust gas 2012 31 201230188 24 26 27 28 30 32 34 36 36a 36b 38 40 42 43 44 46, 50 52 52a 52b 54 54a 54c 55 Exhaust pipe exhaust device Carry-out gate valve RF bias with frequency power supply matching unit Power supply rod Electrostatic clamp electrode '36c Insulation film focus ring DC power switch covered wire refrigerant chamber 48 Piping gas supply tube dielectric Window (top plate) Synthetic quartz part (light guide path passage part) Fused silica part slot plate, 54b slot pair optical waveguide path passage area (mesh) Slot antenna 32 201230188 56 Dielectric plate (retardation plate) 56a Synthesis Quartz section (optical guided wave path through portion) 56b fused silica portion 58 microwave transmission line 60 microwave generator 62 waveguide tube 64 Guide tube - Coaxial tube converter 66 Coaxial tube 68 Inner conductor 70 External conductor 72 Cover plate 72a Through hole (optical waveguide path passage portion) 72b Exhaust flow path 72c Connection channel 74 Flow path 76 ' 78 Pipe 80 Process gas Supply part 82 Process gas supply source 84 Buffer chamber 86 Side wall gas discharge hole 88 Gas supply pipe 90 MFC (mass flow controller) 92 Open and close valve 94 Control part 33 201230188 100 102 104 104L 104R 106 106a 106b 108 110, 112 112L 114 116 116L 118 118L 120 120L 122 124 124a 124b 126 Optical detection device detection head detection optical waveguide path to the road (detection light LB dedicated) optical waveguide path for reversing (reflected light HB dedicated) optical waveguide path fiber path Optical fiber complex optical fiber detecting body 110L '110R housing light reflector, 112R, 114L, 114R optical system optical lens sleeve, 116R conductor sleeve blowing gas supply port, 118R gas inlet gas supply pipe, 120R gas supply pipe blowing Gas supply source base plate through hole exhaust flow passage exhaust pipe 34 201230188 128 exhaust portion 130 light source 132 photosensitive portion 134 A reference setting circuit 136 determines that the comparison unit 138 142 Si02 film side wall portions 142w output portion 140 detects 144 a gate insulating film 146 gate electrode 150 gas outlet 152 gas supply pipe 154 MFC (mass flow controller) 156 on-off valve 35

Claims (1)

201230188 七 申請專利範圍·· 1. 一種電漿處理裝置，其具備有： 可真空排氣的處理容器，係於至少一部份具有 介電體窗； 基板保持部’係於該處理容器内保持被處理基 板； 處理氣體供應部’係為了對該基板施予所欲電 t處理’而將所欲處理氣體供應至該處理容器内； 導體的槽孔板，係具有用以將微波放射至該處 理谷器内之1個或複數個槽孔，而設置於該介電體 窗上； 微波供應部，係為了藉由微波放電來產生該處 理氣體的電漿，而透過該槽孔板及該介電體窗來對 該處理容器内供應微波；及 光學偵測部’係透過該槽孔板所形成之網狀透 孔與該介電體窗來光學性地監視或測量該處理容 益内之該基板表面。 2·如申請專利範圍第1項之電漿處理裝置，其中該槽 孔板的該網狀透孔所分佈之區域係設置於不會干 擾到該槽孔之位置處。 3.如申請專利範圍第1項之電漿處理裝置，其中該光 學偵測部具備有： 光源，係產生偵測光； 感光部，係針對該偵測光而將來自該基板的反 36 201230188 射光轉換成電氣訊號； 偵測電路，係對來自該感光部的電氣訊號施予 特定的訊號處理而輸出偵測資訊或偵測結果； 偵測頭，係透過該槽孔板的網狀透孔及該介電 體窗來將該偵測光照射在該基板保持部上的該基 被表面，並透過該介電體窗及該網狀透孔而引入來 自該基板表面的反射光； 偵測光傳送部，係用以將該偵測光從該光源傳 适至該偵測頭；及 反射光傳送部，係用以將該反射光從該偵測頭 傳送至該感光部。 如申請專利範圍第3項之電漿處理裝置，其中該光 '偵測裝置係監視或測量該基板表面之被加工膜 的祺厚。 如申請專利範圍第3項之電漿處理裝置，其中該偵 剛光包含200nm以下的波長。 如申請專利範圍第5項之電漿處理裝置，其中該偵 /則光包含185nm〜785nm頻帶的波長。 如申請專利範圍第3項之電漿處理裝置，其中該偵 蜊頭具備有： 、 殼體，係配置於該槽孔板上方而由可密閉之導 所構成； 、特定的光學零件，係配置於該殼體内且為該偵 '則光或該反射光所通過之位置處； 37 201230188 吹淨氣體供應部，係對該殼體内供應吹淨 體；及 排氣部’係將該殼體内排氣。 如申請專利範圍第7項之電漿處理裝置，其中該偵 測頭與該介電體窗之間係設置有一邊使來自該微 波供應部的微波朝徑向傳輸一邊縮短其波長之介 電體板與位在該介電體板上方之蓋板； 1 該蓋板中，在與該槽孔板的該網狀透孔所分佈 之區域相重疊之位置處係形成有與該偵測頭的^亥 殼體相連通之貫穿孔。 如申請專利範圍第8項之電漿處理裝置，其中從該 吹淨氣體供應部被供應至該殼體内之吹淨氣體係X 通過該蓋板的貫穿孔而被傳送至該排氣部。 10.如申請專利範圍第i項之電锻處理裝置，其中該槽 孔板的該網狀透孔所分佈之區域的遮光部 曰 呈現圓形。 如申請專利範圍第1〇項之電漿處理裝置，其中該 網狀透孔的遮光部上面係藉由濕蝕刻而呈現圓形： 如申請專利範圍第1項之電€處理裝置，其中該槽 孔板的該網狀透孔所分佈之區域的開口率為7 曰 以上。 如申請專利範圍第1項之電漿處理裝置，其中該網 狀透孔係具有多角形的開口形狀。 如申請專利範圍帛13 J員之電漿處理裝置，其中該 8. 9· 11 12. 13. 38 14. 201230188 網狀透孔係具有蜂巢式構造。 16. A Li:::範圍第1項之電漿處理裝置，其中該槽 孔板係由輻射狀槽孔天線所構成。 如申請專利範㈣1項之錢處理裝置’其中該人 17. 3與該槽孔板的該網狀透孔所分佈之二 相重宜之°卩分係至少由合成石英所構成。 =申請^利範圍第16項之電漿處理裝置，其中該 :丨電體窗中’未與補孔板的_狀透孔所分佈之 區域相重疊之部分係由熔融石英所構成。 19. A如_請專利範圍第8項之處理裝置其中該介 電體，中，與該槽孔板的該網狀透孔所分佈之區域 相重壁之部分係至少由合成石英所構成。 :種光學偵測裝置，係於電漿處理裝置中光學性地 監視或測量基板表面之光學偵測裝置，其中該電漿 處理裝置係將該被處理基板收納在至少一部份具 有介電體窗之可真空排氣的處理容器内，而對該'處 理容器内供應處理氣體，並且，透過設置於該介電 體窗上之具有1個或複數個槽孔之導體的槽孔板 與該介電體窗來將微波供應至該處理容器内，而藉 由微波放電來產生該處理氣體的電漿，且於該電漿 下對該基板施予所欲電漿處理； 該光學偵測裝置具備有： 光源，係產生偵測光； 感光部，係針對該偵測光而將來自該基板的反 39 201230188 射光轉換成電氣訊號； —偵測電路，係對來自該感光部的電氣訊號施予 特定的訊號處理而輸出偵測資訊或偵測結果； 網狀透孔，係形成於該槽孔板而用以供該偵測 光與來自該基板表面的反射光通過； 偵測頭，係透過該槽孔板的網狀透孔及該介電 體窗來將該偵測光照射在該基板保持部上的該基 板表面，並透過該介電體窗及該槽孔板的網狀透孔 而引入來自該基板表面的反射光； 偵測光傳送部，係用以將該偵測光從該光源傳 送至該偵測頭；及 反射光傳送部，係用以將該反射光從該偵測頭 傳送至該感光部。 20.如申請專利範圍第19項之光學偵測裝置，其中該 槽孔板係形成有供該偵測光通過之第1網狀透孔 與供來自該基板表面的反射光通過之第2網狀透 孔； 該偵測頭係透過該槽孔板的該第 1網狀透孔 及該介電體窗來將該偵測光照射在該基板保持部 上的e玄基板表面’並透過該介電體窗及該槽孔板的 s亥第2網狀透孔而引人來自該基板表面的反射光。 如申st專利^圍第^項之絲仙裝置，其中該 偵測頭具備有： 鈸體，係由可密閉之導體所構成； 且為該偵測光或 内供應吹淨氣 光學零件，係配置於該殼體内 該反射光所通過之位置處； 吹淨氣體供應部，係對該殼體 體；及 排氣部，係將該殼體内排氣。 一種電漿處理裝置，係將被處理基板收納在至少一 部份具有介電體f之可真空職的處理容器内 對該處理容H⑽應處理㈣，並且，對該處理容 器内供應能量，而利用該能量來產生該處理氣體: 電漿，且於該電漿下依據從光學偵測裝置所獲得的 訊號來對該基板施予所欲電漿處理； 其中該光學偵測裝置具備有： 光源’係產生偵測光； 感光部，係針對該偵測光而將來自該基板 射光轉換成電氣訊號； —偵測電路，係對來自該感光部的電氣訊號施予 特定的訊號處理而輪出偵測資訊或偵測結果； 二偵測頭，係將該偵測光照射在該基板保持部上 的該基板表面’而引人來自該基板表面的反射光； ,偵測光傳送部，係用以將該偵測光從該光源 送至該偵測頭；及 、 ，反射光傳送部，係用以將該反射光從該偵測 傳送至該感光部； 、、 該偵測頭具備有： 201230188 可密閉的殼體，係配置於該處理容器； 吹淨氣體供應部，係對該殼體内供應吹淨氣 體；及 排氣部，係將該殼體内排氣。 42201230188 VII Patent Application Range 1. A plasma processing apparatus comprising: a vacuum evacuation processing container, wherein at least a portion has a dielectric window; and a substrate holding portion is held in the processing container a substrate to be processed; a process gas supply portion 'supply a desired process gas for supplying the desired process to the substrate; a slot plate of the conductor having radiation for emitting the microwave to the substrate Processing one or more slots in the trough and disposed on the dielectric window; the microwave supply portion is configured to generate plasma of the processing gas by microwave discharge, and pass through the slot plate and the a dielectric window for supplying microwaves into the processing container; and an optical detecting portion 'transmitting through the mesh through hole formed by the slot plate and the dielectric window to optically monitor or measure the processing tolerance The surface of the substrate. 2. The plasma processing apparatus of claim 1, wherein the area in which the mesh-shaped through-holes of the slot plate are distributed is disposed at a position that does not interfere with the slot. 3. The plasma processing apparatus of claim 1, wherein the optical detecting unit is provided with: a light source for detecting light; and a photosensitive portion for inverting the substrate 36 for the detecting light. The light is converted into an electrical signal; the detecting circuit applies a specific signal processing to the electrical signal from the photosensitive portion to output detection information or a detection result; the detecting head is a mesh through hole through the slot plate And the dielectric window illuminating the surface of the substrate on the substrate holding portion, and introducing reflected light from the surface of the substrate through the dielectric window and the mesh through hole; detecting The light transmitting portion is configured to transmit the detecting light from the light source to the detecting head; and the reflected light transmitting portion is configured to transmit the reflected light from the detecting head to the photosensitive portion. A plasma processing apparatus according to claim 3, wherein the light detecting means monitors or measures the thickness of the film to be processed on the surface of the substrate. A plasma processing apparatus according to claim 3, wherein the detection light contains a wavelength of 200 nm or less. A plasma processing apparatus according to claim 5, wherein the detector light comprises a wavelength band of 185 nm to 785 nm. The plasma processing apparatus of claim 3, wherein the detecting head is provided with: a housing disposed above the slot plate and configured by a sealable guide; and a specific optical component In the housing and at the position where the light or the reflected light passes; 37 201230188 The purge gas supply unit supplies the blow body to the housing; and the exhaust portion is the shell Exhaust in the body. The plasma processing apparatus of claim 7, wherein a dielectric body that shortens a wavelength of the microwave from the microwave supply portion while transmitting the microwave from the microwave supply portion is disposed between the detection head and the dielectric window. a plate and a cover plate positioned above the dielectric plate; 1 the cover plate is formed at a position overlapping the area of the mesh through hole of the slot plate and the detecting head The through hole is connected to the housing. The plasma processing apparatus of claim 8, wherein the purge gas system X supplied from the purge gas supply unit to the casing is conveyed to the exhaust portion through a through hole of the cover. 10. The electric forging apparatus according to claim i, wherein the light shielding portion 区域 of the region in which the mesh through hole of the slot plate is distributed has a circular shape. The plasma processing apparatus of claim 1, wherein the top surface of the mesh-shaped through-hole is rounded by wet etching: the electric processing device according to claim 1 of the patent scope, wherein the groove The opening ratio of the region in which the mesh-shaped through holes of the orifice plate are distributed is 7 曰 or more. A plasma processing apparatus according to claim 1, wherein the mesh through-hole has a polygonal opening shape. For example, the plasma processing apparatus of the patent application scope ,13 J member, wherein the 8. 9·11 12. 13. 38 14. 201230188 mesh through-hole system has a honeycomb structure. 16. A Li::: The plasma processing apparatus of the first item, wherein the slot plate is formed by a radial slot antenna. For example, the money processing device of claim 1 (4), wherein the person 17.3 is distributed with the two mesh-shaped through holes of the slot plate, is at least composed of synthetic quartz. = The plasma processing apparatus of claim 16, wherein the portion of the electric window which is not overlapped with the region in which the _-shaped through-hole of the perforated plate is distributed is composed of fused silica. 19. The processing apparatus of claim 8, wherein the dielectric body, the portion of the dielectric layer that is distributed with the mesh-shaped through-hole of the slot plate, is at least composed of synthetic quartz. The optical detecting device is an optical detecting device for optically monitoring or measuring a surface of a substrate in a plasma processing device, wherein the plasma processing device stores the processed substrate in at least a portion of the dielectric body. a processing chamber in which the window is evacuated, and a processing gas is supplied into the processing container, and a slot plate having a conductor having one or a plurality of slots provided on the dielectric window is passed through a dielectric window for supplying microwaves into the processing container, and generating a plasma of the processing gas by microwave discharge, and applying a desired plasma treatment to the substrate under the plasma; the optical detecting device The invention comprises: a light source for generating detection light; a photosensitive portion for converting the reflected light of the reverse 39 201230188 from the substrate into an electrical signal; and a detecting circuit for applying an electrical signal from the photosensitive portion Transmitting a specific signal processing to output detection information or detecting a result; a mesh through hole is formed in the slot plate for transmitting the detected light and reflected light from the surface of the substrate; Passing through the mesh through hole of the slot plate and the dielectric window to illuminate the detection light on the surface of the substrate on the substrate holding portion, and through the dielectric window and the mesh of the slot plate The hole receives the reflected light from the surface of the substrate; the detecting light transmitting portion is configured to transmit the detecting light from the light source to the detecting head; and the reflected light transmitting portion is configured to receive the reflected light from the The detection head is transmitted to the photosensitive portion. 20. The optical detecting device of claim 19, wherein the slot plate is formed with a first mesh through hole through which the detection light passes and a second mesh through which reflected light from the surface of the substrate passes. The detecting head transmits the detecting light to the surface of the e-base substrate on the substrate holding portion through the first mesh-shaped through hole of the slot plate and the dielectric window The dielectric window and the second mesh-shaped through hole of the slot plate attract reflected light from the surface of the substrate. For example, the application of the St. patents, the second item of the silk fairy device, wherein the detecting head is provided with: a body, which is composed of a sealable conductor; and a supply of blown optical components for the detection light or the interior Disposed in the housing at a position where the reflected light passes; the purge gas supply portion is for the housing body; and the exhaust portion is for exhausting the housing. A plasma processing apparatus for processing a substrate to be processed in at least a portion of a vacuumable processing container having a dielectric body f to process (4) the processing volume H (10), and supplying energy to the processing container, and Using the energy to generate the processing gas: a plasma, and applying a desired plasma treatment to the substrate according to a signal obtained from the optical detecting device; wherein the optical detecting device is provided with: a light source 'the detection light is generated; the photosensitive portion converts the light from the substrate into an electrical signal for the detection light; the detection circuit applies a specific signal processing to the electrical signal from the photosensitive portion and rotates Detecting information or detecting a result; the second detecting head irradiates the detecting light to the surface of the substrate on the substrate holding portion to introduce reflected light from the surface of the substrate; and detecting the light transmitting portion The detecting light is sent from the light source to the detecting head; and the reflected light transmitting portion is configured to transmit the reflected light from the detecting to the photosensitive portion; and the detecting head is provided with : 201230188 The sealable casing is disposed in the processing vessel; the purge gas supply unit supplies the purge gas to the casing; and the exhaust portion exhausts the casing. 42
TW100130476A 2010-08-26 2011-08-25 A plasma processing device and an optical detection device TWI437634B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010189435A JP5385875B2 (en) 2010-08-26 2010-08-26 Plasma processing apparatus and optical monitor apparatus

Publications (2)

Publication Number Publication Date
TW201230188A true TW201230188A (en) 2012-07-16
TWI437634B TWI437634B (en) 2014-05-11

Family

ID=45723139

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100130476A TWI437634B (en) 2010-08-26 2011-08-25 A plasma processing device and an optical detection device

Country Status (6)

Country Link
US (1) US8974628B2 (en)
JP (1) JP5385875B2 (en)
KR (1) KR101378693B1 (en)
CN (1) CN103069551A (en)
TW (1) TWI437634B (en)
WO (1) WO2012026117A1 (en)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010016225A (en) * 2008-07-04 2010-01-21 Tokyo Electron Ltd Thermal control mechanism and semiconductor manufacturing device using the same
DE102010027224A1 (en) * 2010-07-15 2012-01-19 Forschungszentrum Jülich GmbH Electrode for generating a plasma, plasma chamber with this electrode and method for in situ analysis or in-situ processing of a layer or the plasma
US9134257B2 (en) 2013-03-14 2015-09-15 Graphic Packaging International, Inc. Method and apparatus for identifying defects in susceptors of microwave food containers
WO2014146008A2 (en) * 2013-03-15 2014-09-18 Starfire Industries Llc Scalable multi-role surface-wave plasma generator
CN104347338A (en) * 2013-08-01 2015-02-11 中微半导体设备(上海)有限公司 Cooling liquid processing system of plasma processing device and method thereof
CN103515486A (en) * 2013-10-25 2014-01-15 浙江光普太阳能科技有限公司 Method for preparing backside point contact solar battery through plate type PECVD
CN103646840A (en) * 2013-11-29 2014-03-19 上海华力微电子有限公司 Wafer fixing device for pre-cooling cavity of ion implantation machine
KR102108318B1 (en) * 2013-12-23 2020-05-11 세메스 주식회사 Substrate treating apparatus
JP6366383B2 (en) * 2014-06-27 2018-08-01 株式会社ディスコ Processing equipment
JP2016092102A (en) * 2014-10-31 2016-05-23 東京エレクトロン株式会社 Method for etching organic film
AT517982B1 (en) * 2015-12-07 2017-11-15 Universität Linz Device for exhaust gas analysis of an internal combustion engine
CN106935467B (en) * 2015-12-31 2018-11-06 中微半导体设备(上海)有限公司 A kind of inductively coupled plasma processor
KR20180042400A (en) * 2016-09-20 2018-04-25 루마센스 테크놀로지스 홀딩스, 인코포레이티드 Temperature probe
US11022877B2 (en) * 2017-03-13 2021-06-01 Applied Materials, Inc. Etch processing system having reflective endpoint detection
KR20190005029A (en) * 2017-07-05 2019-01-15 삼성전자주식회사 Plasma processing apparatus
KR101893035B1 (en) * 2017-09-27 2018-08-30 비씨엔씨 주식회사 Cover ring assembly of plasma processing chamber
CN108018536A (en) * 2017-11-10 2018-05-11 上海华力微电子有限公司 Pvd equipment and method
US11437224B2 (en) * 2019-09-09 2022-09-06 Shibaura Mechatronics Corporation Plasma processing apparatus
US11557825B2 (en) 2019-10-15 2023-01-17 Huawei Technologies Co., Ltd. Antenna integrated display screen
CN110850690B (en) * 2019-11-19 2023-05-23 上海华力微电子有限公司 Stripping equipment, thimble monitoring method and stripping process
KR102607077B1 (en) * 2020-06-09 2023-11-29 도쿄엘렉트론가부시키가이샤 Etching method and substrate processing apparatus
JP7458292B2 (en) * 2020-10-20 2024-03-29 東京エレクトロン株式会社 Plasma Processing Equipment
KR102543670B1 (en) * 2020-11-30 2023-06-16 주식회사 더웨이브톡 Turbidity Meter
KR20230033984A (en) * 2021-09-02 2023-03-09 주식회사 원익아이피에스 Substrate processing apparatus
JP2024017373A (en) * 2022-07-27 2024-02-08 日新電機株式会社 plasma processing equipment

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3376921D1 (en) * 1982-09-10 1988-07-07 Nippon Telegraph & Telephone Ion shower apparatus
US6390019B1 (en) * 1998-06-11 2002-05-21 Applied Materials, Inc. Chamber having improved process monitoring window
US6870123B2 (en) * 1998-10-29 2005-03-22 Canon Kabushiki Kaisha Microwave applicator, plasma processing apparatus having same, and plasma processing method
TW580735B (en) * 2000-02-21 2004-03-21 Hitachi Ltd Plasma treatment apparatus and treating method of sample material
US6831742B1 (en) 2000-10-23 2004-12-14 Applied Materials, Inc Monitoring substrate processing using reflected radiation
EP1352415A2 (en) 2000-10-23 2003-10-15 Applied Materials, Inc. Monitoring substrate processing using reflected radiation
JP3735329B2 (en) 2002-08-22 2006-01-18 三菱重工業株式会社 Microwave excitation discharge lamp
US7033518B2 (en) * 2003-06-24 2006-04-25 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for processing multi-layer films
US20060075968A1 (en) * 2004-10-12 2006-04-13 Applied Materials, Inc. Leak detector and process gas monitor
JP4718189B2 (en) 2005-01-07 2011-07-06 東京エレクトロン株式会社 Plasma processing method
JP4496191B2 (en) * 2006-09-29 2010-07-07 株式会社東芝 OPTICAL PROCESS MONITOR DEVICE, OPTICAL PROCESS MONITOR METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
US7537671B2 (en) * 2006-09-29 2009-05-26 Tokyo Electron Limited Self-calibrating optical emission spectroscopy for plasma monitoring
JP5438260B2 (en) * 2007-03-29 2014-03-12 東京エレクトロン株式会社 Plasma processing equipment
US20100101728A1 (en) * 2007-03-29 2010-04-29 Tokyo Electron Limited Plasma process apparatus
JP5058084B2 (en) 2007-07-27 2012-10-24 株式会社半導体エネルギー研究所 Method for manufacturing photoelectric conversion device and microwave plasma CVD apparatus
JP2009054818A (en) 2007-08-28 2009-03-12 Tokyo Electron Ltd Plasma processing apparatus, plasma processing method and final point detection method
JP5149610B2 (en) * 2007-12-19 2013-02-20 株式会社日立ハイテクノロジーズ Plasma processing equipment
JP5027753B2 (en) 2008-07-30 2012-09-19 東京エレクトロン株式会社 Substrate processing control method and storage medium

Also Published As

Publication number Publication date
CN103069551A (en) 2013-04-24
US20130180660A1 (en) 2013-07-18
JP5385875B2 (en) 2014-01-08
KR101378693B1 (en) 2014-03-27
WO2012026117A1 (en) 2012-03-01
TWI437634B (en) 2014-05-11
JP2012049299A (en) 2012-03-08
US8974628B2 (en) 2015-03-10
KR20130136451A (en) 2013-12-12

Similar Documents

Publication Publication Date Title
TW201230188A (en) Plasma processing apparatus and optical monitoring device
JP3329685B2 (en) Measuring device and measuring method
KR100886473B1 (en) Plasma processing method
KR101056199B1 (en) Plasma oxidation treatment method
JP2925535B2 (en) Microwave supplier having annular waveguide, plasma processing apparatus and processing method having the same
US20100101728A1 (en) Plasma process apparatus
US20060003603A1 (en) Method and apparatus for processing
JP2005033055A (en) Surface wave plasma processor using multi-slot antenna for which circular arcuate slot is provided together with radial slot
JP2007501534A (en) Plasma ashing apparatus and end point detection process
US8003484B2 (en) Method for forming silicon oxide film, plasma processing apparatus and storage medium
TWI722186B (en) Atomic layer etch process using plasma in conjunction with a rapid thermal activation process
JP2006128000A (en) Plasma treatment device
JPH04116926A (en) Plasma treatment method
JP2016058361A (en) Plasma processing device and method for detecting light
US9029249B2 (en) Plasma doping apparatus and plasma doping method
KR100263406B1 (en) Method and device for detecting the end point of plasma process
JP2001345312A (en) Device and method for plasma treatment and method of manufacturing structure
JP2001035695A (en) Plasma treating device
JP2001167900A (en) Plasma treatment apparatus
JP2001073150A (en) Microwave supply device and plasma treatment device as well treatment therefor
JP3130009B2 (en) Single wafer heat treatment equipment
JP2005294551A (en) Method and apparatus for oxidation treatment of silicon based material, and manufacturing method for semiconductor device
JP4226135B2 (en) Microwave plasma processing apparatus and method
JPH11329792A (en) Microwave supply container
US8497196B2 (en) Semiconductor device, method for fabricating the same and apparatus for fabricating the same

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees