TW201229448A - Continuous oven - Google Patents

Continuous oven Download PDF

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Publication number
TW201229448A
TW201229448A TW100128661A TW100128661A TW201229448A TW 201229448 A TW201229448 A TW 201229448A TW 100128661 A TW100128661 A TW 100128661A TW 100128661 A TW100128661 A TW 100128661A TW 201229448 A TW201229448 A TW 201229448A
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Taiwan
Prior art keywords
continuous reactor
tunnel
section
gas
disposed
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TW100128661A
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Chinese (zh)
Inventor
Andreas Flueckiger
Immo Koetschau
Andreas Reichart
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Centrotherm Photovoltaics Ag
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Publication of TW201229448A publication Critical patent/TW201229448A/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/5806Thermal treatment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623Sulfides, selenides or tellurides
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27BFURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/14Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment
    • F27B9/20Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment the charge moving in a substantially straight path tunnel furnace
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27BFURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/14Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment
    • F27B9/20Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment the charge moving in a substantially straight path tunnel furnace
    • F27B9/24Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment the charge moving in a substantially straight path tunnel furnace being carried by a conveyor
    • F27B9/2407Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment the charge moving in a substantially straight path tunnel furnace being carried by a conveyor the conveyor being constituted by rollers (roller hearth furnace)
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27BFURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/30Details, accessories, or equipment peculiar to furnaces of these types
    • F27B9/3005Details, accessories, or equipment peculiar to furnaces of these types arrangements for circulating gases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
    • H01L31/032Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/206Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/541CuInSe2 material PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Furnace Details (AREA)
  • Tunnel Furnaces (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Continuous furnace for the thermal conversion of a metallic precursor layer arranged on a substrate (3) in a gas flow, in particular for the conversion of a precursor layer into a CIGSS layer, with a continuous tunnel, comprising 5 a plurality of successive segments (5, 6, 7, 8, 9), wherein the cross-section of the tunnel in a middle segment (6, 7) is smaller than in a segment (5, 8, 9) adjacent the middle segment.

Description

201229448 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種根據申請專利範圍第1項之前言之 連續式反應爐’其使設置於基板上之金屬前驅物熱轉換, 以及關於一種根據附屬之申請專利範圍第14項之連續式反 應爐之用途。 【先前技術】 在利用銅-銦-錄-硫化物西化物_層(CiGSS )製造薄膜 太陽此電池中’將金屬前驅物層轉換為CIGSS層,係為已知 技藝之製造方法。在轉換前,前驅物層係設置於基板上。 該前驅物層包含有金屬前驅物層,且可以為含有硒和/或硫 之則驅物層。 W02〇〇9/〇33674已揭露上述金屬前驅物層轉換為 CIGSS層之轉換方法和裝置,其轉換發生之溫度超過35〇 C,可在連續式反應爐内建立轉換時之熱和大氣狀態。上 述W〇申請案所示之連續式反應爐與其方法均為已知技藝。 一種可能的轉換環境為在真空下,在真空下運作之方 法’然而’其具有非常長的轉換程序時間之缺點。 更適5的疋,通常在加工氣體通過連續式反應爐之過 程中例如’通過入口導入反應爐,藉由自反應爐吸取至 吸取裝置以抽出。一氣體載體,如,&,其選擇地與其它 201229448 :伤混合,如,栖和/或硫’用於作為加工氣體,並通過基 板上’该加工氣體之主要目的為建立一無氧環境。 而’在某些情況下會出現這種狀沉在_層形 成時會發生不均自。㈣的料料致利料些基板製造 之太陽能模組之效率下降。 【發明内容】 本發月改善所述技藝之裝置和方法之問題,特別是, 本發明具體化裝置和方法之問題,其可能提升金屬前驅物 層轉換為均相CIGSS層之轉換。該轉換應該在盡可能短的時 間内發生。 該問題可利用跟據申請專利範圍第丨項和使用如根據 附廣之申請專利範圍第14項之裝置而解決。 優點的改進如依附之附屬項標的。 本發明使用之發現,由於在加工氣體流内不均勻流 動,使在形成之CIGSS層内不均勻性增加。藉由在區段内之 連續式反應爐之減少的隧道戴面,其可使金屬前驅物層之 轉換發生,由於在轉換區域内在隧道頂蓬和基板表面間之 剩餘截面為連續地均勻,使流動在這區域内為均勻的。上 游之減少的隧道截面,其加工氣體之背壓形成,使加工氣 體在減少裁面之起點處均勻地流動。在此,“中間區段” 係指連續式反應爐區分為複數個相連區段,一令間區段其 至少有一前方區段和至少一接連區段之區段。根據本申請 案之定義’該中間區段並非必須精確地要位在連續式反應201229448 VI. Description of the Invention: [Technical Field] The present invention relates to a continuous reactor according to the first aspect of the patent application, which thermally converts a metal precursor disposed on a substrate, and relates to a basis The use of the continuous reactor of the attached patent application No. 14. [Prior Art] The production of a film using a copper-indium-record-sulfide texide layer (CiGSS) to convert a metal precursor layer into a CIGSS layer is a known manufacturing method. The precursor layer is disposed on the substrate prior to conversion. The precursor layer comprises a metal precursor layer and may be a precursor layer containing selenium and/or sulfur. W02〇〇9/〇33674 has disclosed a conversion method and apparatus for converting the above metal precursor layer into a CIGSS layer, and the temperature at which the conversion occurs exceeds 35 〇 C, and the heat and atmospheric state at the time of conversion can be established in the continuous reaction furnace. The continuous reactor and its method shown in the above-mentioned application are both known in the art. One possible conversion environment is the method of operating under vacuum under vacuum 'however' it has the disadvantage of very long conversion program time. More preferably, the crucible is usually withdrawn during the passage of the process gas through the continuous reactor, e.g., through the inlet to the reactor, and from the reactor to the suction unit. A gas carrier, such as &, optionally mixed with other 201229448:injury, such as, and/or sulfur, is used as a process gas and passes through the substrate. The primary purpose of the process gas is to create an anaerobic environment. . And in some cases, this kind of sag will occur when the _ layer is formed. (4) The materials are expected to reduce the efficiency of solar modules manufactured by some substrates. SUMMARY OF THE INVENTION The problems of the apparatus and method for improving the art, and in particular the problems of the apparatus and method of the present invention, may improve the conversion of the metal precursor layer to a homogeneous CIGSS layer. This conversion should occur in the shortest possible time. This problem can be solved by using the device according to the scope of the patent application and the use of the device according to the scope of claim 14 of the attached patent application. The improvement of the advantages is as attached to the attached subject matter. The use of the present invention has found that inhomogeneities in the formed CIGSS layer are increased due to uneven flow within the process gas stream. By the reduced tunneling of the continuous reactor in the section, the conversion of the metal precursor layer can occur, since the remaining cross-section between the tunnel canopy and the surface of the substrate in the transition zone is continuously uniform, The flow is uniform in this area. The reduced tunnel section of the upstream travels with the back pressure of the process gas, allowing the process gas to flow evenly at the beginning of the reduction of the face. Here, "intermediate section" means that the continuous reactor is divided into a plurality of connected sections, and the intermediate section has at least one section of the front section and at least one section of the successive sections. According to the definition of the present application, the intermediate segment does not have to be accurately positioned in a continuous reaction.

4 S 201229448 爐之中間’但只是不設置於連續式反應爐之一邊。較佳為, 加工氣體之氣體流在連續式反應爐之輸送方向流動。關於 加工氣體’該氣體是有利於使用,其中該氣體包括氣體載 體或氣體載體之必要組成。氮氣是較佳為用作氣體載體, 加工氣體之其它成份可以為硒和/或硫。 在本發明之一實施例中,在連續式反應爐内提供至少 一加熱裝置和至少一冷卻裝置,使個別區段可相互個別地 保持在特定之溫度。 較佳為’隧道之内壁為石墨製作,且至少一加熱裝置 及或至少一冷卻裝置為埋設石墨。術語“内壁,,在此較佳 為意指整個隧道圍牆,包括隧道之頂蓬。 較佳為,在中間區段内,一頂蓬元件係設置於隧道之 頂蓬。該頂蓬元件可完整地連通至隧道之頂蓬,或作為一 ^離7L件連接於隧道之頂蓮。該頂蓬元件有效地減少中間 區段之截面。頂蓬元件可例如為大塊或懸吊頂蓬,其較佳 為重要之有效流動截面減少。在此方式中,簡單地產生減 少的截面。 較佳為,隧道之截面在令間區段内具有至少一面向輸 送方向之側通道。特別較佳為’在連續式反應爐内提供二 個側通道,有利於一個在頂蓬元件左側和一個在頂蓮元件 右側。因此’使頂蓬元件設置於隨道之頂蓬之中間, ,道可建立於頂蓬S件之任—側。這提供有利於在基板上 建立-穩定流動’使在轉換期間可預防缺乏碼和/或缺各 201229448 側通道係設置於連續式反應爐之輸送方向,較佳 少的中間區段截面之面穑。牯別歙佔& 叮 马減 , 囱槓特別較佳為,可設置於隧道之 邊角’,當有二個側通道時,其係設置在随道之二個頂部 邊角之每ϋ道之頂部側或隨道之頂蓮為位在相對於 随道輸送裝置之隨道—側。該輸送裝置透過連續式反應爐 提供輸送基板。通常輸送裝置係設置㈣道底部,使基板 可以水平地設置在輸送裝置。然而,本發明並未傅限於這 種型式之設置,而任何不同的設置,如術語“頂蓬,,和 部”應被照著重新解釋。 較佳為’導引元件係設置於頂蓬元件之隨道上游。在 此情形之上游’係、指相反於加卫氣體之流動方向,例如, 較佳為相反於基板之輸送方向1導引元件至少部分地能 夠導引氣體或加卫氣體通過随道以流動至側通道或通道。 特別較佳為,該導引元件係設計為—導引楔形,特別為一 角形導引楔形,其提供導引至少—些氣體通過随道流至 二個側通道°較佳為連續式反應爐係、設計為至少3〇%,較 佳為至4 50%之加工氣體導引通過側通道。側通道之設 計’使導引^件和任何的進—步安裝將有利於實施,以達 =所述比例。此提供優點,㈣是在基板上建立穩定地流 動’並無關於在側通道之任何流動。 較佳為,連續式反應爐具有至少一個導引珠設置於随 、内之輸送方向或流動方向。該導引珠較佳設置為使至少 部份地定界關面通道丨珠至少部分地可能分離在4 S 201229448 The middle of the furnace 'but only is not placed on one side of the continuous reactor. Preferably, the gas stream of the process gas flows in the direction of transport of the continuous reactor. Regarding the process gas 'the gas is advantageous for use, wherein the gas comprises the necessary composition of a gas carrier or a gas carrier. Nitrogen is preferably used as a gas carrier, and the other components of the process gas may be selenium and/or sulfur. In one embodiment of the invention, at least one heating device and at least one cooling device are provided in the continuous reactor so that the individual segments can be individually maintained at a particular temperature. Preferably, the inner wall of the tunnel is made of graphite, and at least one heating device and or at least one cooling device is buried graphite. The term "inner wall", as used herein, preferably means the entire tunnel wall, including the roof of the tunnel. Preferably, in the intermediate section, a canopy element is placed on the roof of the tunnel. The canopy element can be completed. Connected to the canopy of the tunnel, or as a detachment connected to the top of the tunnel. The canopy element effectively reduces the cross section of the intermediate section. The canopy element can be, for example, a large block or a suspended canopy. Preferably, the effective effective flow cross section is reduced. In this manner, the reduced cross section is simply produced. Preferably, the cross section of the tunnel has at least one side passage facing the conveying direction in the inter-section section. Particularly preferred is Two side channels are provided in the continuous reactor, which is beneficial to one on the left side of the roof member and one on the right side of the top member. Therefore, the roof member can be placed in the middle of the canopy. S-part-side. This provides a favorable - stable flow on the substrate to prevent the lack of code during the conversion and/or the presence of the 201229448 side channel system in the continuous reaction furnace, preferably less intermediate The section of the section is 穑. 牯 歙 歙 & amp amp amp amp amp amp 囱 囱 囱 囱 囱 囱 囱 囱 囱 囱 囱 囱 囱 囱 囱 囱 囱 囱 囱 囱 囱 囱 囱 囱 囱 囱 囱 囱 囱 囱 囱 囱 囱 囱 囱The top side of each lane of the top corner or the top of the channel is positioned on the side of the channel relative to the accompanying conveyor. The conveyor provides a transport substrate through a continuous reactor. Typically the conveyor is set up (4) At the bottom, the substrate can be placed horizontally on the delivery device. However, the invention is not limited to this type of arrangement, and any different settings, such as the terms "canopy, and" should be reinterpreted. Preferably, the 'guide element is disposed upstream of the channel of the canopy element. In the upstream of this case, the finger is opposite to the flow direction of the gas, for example, preferably opposite to the direction of transport of the substrate 1 At least partially capable of directing gas or urging gas through the channel to flow to the side channels or channels. Particularly preferably, the guiding element is designed as a guiding wedge, in particular an angled guiding wedge, which provides guidance At least some The body flows through the accompanying passage to the two side passages. Preferably, the continuous reaction furnace system is designed to be at least 3%, preferably to 40%, of the processing gas guided through the side passages. The lead and any further step mounting will facilitate implementation to achieve the stated ratio. This provides the advantage that (4) is to establish a steady flow on the substrate 'without any flow in the side channels. Preferably, The continuous reaction furnace has at least one guiding bead disposed in the conveying direction or the flowing direction of the inside. The guiding bead is preferably disposed such that the at least partially delimited closed channel bead is at least partially separated at

S 201229448 隨道内來自流動於基板上之n此供給優點,特別是在 基板上建立均勻氣流。 較佳為]少一導引珠言史置於頂蓮元件之側面邊緣。 尤其較佳設置為使一頂蓬元件設置於隧道之頂蓬中心,以 建立二個側通$。較佳為導引珠設置於頂|^件之兩個側 面邊緣。該導引珠較佳為具有長方形截面,其高度大於寬 度,使導引珠向下凸出至隧道截面之内部。這確實地製造 側通道。該導引珠較佳為延伸在頂蓮元件之整體長度之至 少一半以上,較佳為至少90% 。該導引珠之設計代表也可 以是間斷的。然而,如果間斷僅是短距離,其增加實質上 在側通道内流動於基板上之混合氣流。 較佳為,至少一保護端緣設置於頂蓬元件上或導引元 件上》至少在大部分情況下,保護端緣較佳設置為橫列於 隧道軸線。保護端緣是在一種隧道截面之方式而有利地設 置,並進一步減少關於已經存在於中間區段之減少截面。 在轉換發生之上游區域產生一背壓。因此,在保護端緣後 方形成穩定的流動。在連接側通道中,其較佳設置方式為 在加工氣體之氣流中,包含有體積流量之優勢比例,尤其 適合於在基板上流動情形之發生。 有利的是,提供前方保護端緣和後方保護端緣,該前 方保護端緣係設置於頂蓬元件之上游端之上或前面,以橫 列於流動方向。該後方保護端緣係設置於頂蓬元件之下游 端,以橫列於隧道軸線。在各種情況下,前方端和後方端 意指設置於各自區域之保護端緣,例如,較佳為最前面之 201229448 20%内,更佳為在最前面之丨〇%内,或是在最後面之2〇% 内,更佳為頂蓬元件之10% 。尤其是穩定流動係在保護端 緣間實現。 較佳為,頂蓬元件為至少如基板之寬度’該基板可藉 由輸送裝置輸送。尤其較佳設置為導引珠設置於輸送基板 側向旁邊’或也可能在上方,並使—致相同之氣流能在基 板整體寬度之上方達成。 較佳為,在中間區段區域之隧道截面面積,其相較於 相鄰隨道之面積係減少至少观。尤其較佳為減少截面面 積至少30%或更多,甚至較佳為減少截面面積至少刪。 在保護端緣之區域中,其隨道高度為減少,使在未減少截 面中’較佳為至少另5%,較佳為至少⑽之随道之總高 度。在此應該被考慮的是,在側通道之面積中,降低高度 通常地,而是在它們之間。㈣端緣之寬度較佳為 度之最多三倍,更佳為其之最多兩倍。在此方法中’ 在保護端緣之流動阻力增力”在保護端緣之截面面積中, Γ:Τ度,其相較於未減少之截面,最佳為減少至少 至更佳為減少至少或,"在側通道之面積 中’其相較於相鄰區段,嗲 側通::佳:具有相對一道高度二:為度未:該 板至::在道之最前*端供給,給基 第一俨 佳實施例中,該入口閘在隧道之 :而和出口間在隨道之第二端而供給,_ 在連續方法之反應爐,以確保連續式反應i為S 201229448 comes from the supply advantage of flowing from the substrate, especially on the substrate to establish a uniform airflow. Preferably, one less guide is placed on the side edge of the top member. It is especially preferred to provide a canopy element at the center of the canopy of the tunnel to establish two sideways $. Preferably, the guide beads are disposed on the two side edges of the top member. Preferably, the guide bead has a rectangular cross section with a height greater than the width such that the guide bead projects downwardly into the interior of the tunnel section. This does create a side channel. Preferably, the guide bead extends over at least half of the overall length of the top member, preferably at least 90%. The design of the guide bead can also be intermittent. However, if the discontinuity is only a short distance, it increases the amount of mixed gas flowing substantially on the substrate within the side channels. Preferably, at least one protective edge is provided on the canopy member or on the guiding member." At least in most cases, the protective edge is preferably disposed transverse to the tunnel axis. The protective edge is advantageously arranged in a tunnel section and further reduces the reduced cross-section already present in the intermediate section. A back pressure is generated in the upstream region where the transition occurs. Therefore, a stable flow is formed behind the protective edge. In the connecting side channel, it is preferably arranged in the gas flow of the processing gas to contain a proportional ratio of the volume flow, and is particularly suitable for the occurrence of flow on the substrate. Advantageously, a front protective edge and a rear protective edge are provided, the front protective edge being disposed above or in front of the upstream end of the canopy member for traversing the flow direction. The rear protective edge is disposed at a downstream end of the canopy member to be transverse to the tunnel axis. In each case, the front end and the rear end mean the protective edge provided in the respective area, for example, preferably the frontmost 201229448 within 20%, more preferably within the top 丨〇%, or at the end Within 2% of the surface, it is preferably 10% of the ceiling component. In particular, stable flow systems are implemented between the protective edges. Preferably, the canopy element is at least as wide as the substrate' the substrate can be transported by the transport device. It is especially preferred to provide the guide bead disposed laterally to the side of the transport substrate or possibly above, and to enable the same airflow to be achieved above the overall width of the substrate. Preferably, the cross-sectional area of the tunnel in the intermediate section region is at least reduced compared to the area of the adjacent runner. It is especially preferred to reduce the cross-sectional area by at least 30% or more, and it is even preferred to reduce the cross-sectional area at least. In the region of the protective edge, it is reduced with the track height such that it is preferably at least another 5%, preferably at least (10) of the total height of the track in the unreduced cross section. It should be considered here that in the area of the side channels, the height is lowered, usually, but between them. (4) The width of the end edge is preferably at most three times the degree, more preferably up to two times. In this method, 'the flow resistance increase at the protective end edge' is in the cross-sectional area of the protective end edge, Γ: Τ, which is preferably at least at least to reduce at least or less than the unreduced cross section. , " in the area of the side channel's compared to the adjacent section, the side of the side:: good: has a relative height of two: the degree is not: the board to:: at the front of the road * supply, give In a first preferred embodiment, the inlet gate is in the tunnel: and the outlet is supplied at the second end of the channel, _ in a continuous process reactor to ensure a continuous reaction i

S 8 201229448 無氧的。 閘和/或出 之污染。 :間門可具有機械閱或滑塊,且較佳為每個入口 口閘具有一氣體閘。該氣體閘之使用可防止組件 随道較t該入口問包括之氣體入口以供給加工氣體至 現的可與氣體閘設計為—整體。這是可以實 =整藉由氣體間之使用,使氣體流動在可互相獨 讀閘之兩側。較佳為’入口閘有複數個入口開 或,縫’這些開孔之—部分用於氣體閘,且至少一開孔 作為虱體人口。在代表實施例中,氣體閘和氣體人口也可 能分開為二個構件。這提供在設備配置中有更多彈性之優 勢。 較佳為,加工氣體在氣體入口直接導入連續式反應爐 之隨c 抽出裝置以抽出加工氣體,其較佳為設置於中 間區段之下游。在隧道内之特定位置導入和抽出,其提供 決定流動方向之優勢,並確立在連續式反應爐建立之狀 態。特別是’減少中間區段上游之例如,硒和/或硫凝結。 較佳為,一加熱器設置於中間區段。這提供定義溫度 曲線’並可以在反應區域内設定或調整,其較佳為包括該 t間區段或數個中間區段。 較佳為,該随道包括一加熱區域、一反應區域和一冷 卻區域。該中間區段較佳為設置於反應區域。在此情況下, 其中一個區域可以明確地包括數個區段。因此,反應區域 為例,較佳為包括至少二個區段,以建立一個足夠長度之 轉換距離。藉由本發明明確地涵蓋,其設置為使間斷存在 201229448 於區段之間’例如’頂蓬元件或導引珠。如這類的短間斷, 其較佳為比隧道寬度更短,且為次要重要之流動。該氣體 入口較佳為設置在位於加熱區域之區段之上游端。 上述的導引元件較佳為位在加熱區域,較佳為位在轉 變至反應區域,如此限定反應區域之上游流動狀態,使在 反應區域内僅有限定導引元件之下游流動狀態。如上文所 述’前方保護端緣較佳為位在導引元件之末端或是在頂蓬 元件之起點。該冷卻區域轉而包括至少一區段,或在某些 情況下’根據冷卻區域之長度需求,其為數個區段。該抽 出裝置較佳為設置於冷卻區域,尤其較佳為在冷卻區域之 第一區段之下游端。這此方法中,進一步達到在冷卻區域 之下游區段’其為不含猫和/或硫,或大部分不含站和/或硫 之氛圍’使進一步冷卻可發生在不含猫和/或不含硫,且沒 有砸和/或硫之凝結發生。在最後區段之末端,其為冷卻區 域之一部分’較佳為進一步有一閘門,它可以防止氧氣從 外部滲透到連續式反應爐。 本發明之另一方面關於一根據本發明之利用先前所述 特徵之連續式反應爐或較佳為設置於基板上之金屬前驅物 熱轉換之特徵之用途’特別是關於金屬前驅物層轉換為 CIGSS層之轉換。 除了上述優點’本發明具特別優點,其為一更多或更 少穩定之穩定或穩定化流動產生,以轉換前驅物層,使均 勻性CIGSS層可被產生。具有導引元件之較低頂蓬,其導 引珠和保護端緣提高它們各自地個別影響,雖然這些方法 201229448 之每一個為個別地能夠,其它獨立地方法,或改善金屬前 驅物層轉換之流動狀態。 以下’將以圖式為基礎詳細地說明本發明之較佳具體 實施。 在圖1中’根據本發明連續式反應爐所示為在縱向剖面 之垂直剖面示意圖。特別是,入口閘丨和出口閘2之破切說 明已被省略。 如圖1所示連續式反應爐示意圖,可有利使用於將設 置於基板3上之前驅物層加熱地轉換為(:1(}53層。關於相關 方法處理之細節,應參考前述之w〇申請案。 基板3經由入口閘1供給至連續式反應爐,入口閘丨包括 複數個開孔》這些開孔之一部分在操作過程中形成氣體 閘,以保證連續式反應爐之内部為無氡。出口閘2同樣地含 有一氣體閘。在入口閘1之至少—個開孔用於作為氣體閘, 其中該開孔為設置於入口閘丨之輸送方向之最下游。該開口 設計為狹溝形式》在實施例所示,氮氣經由入口閘〗之氣體 入口直接地供給至連續式反應爐之随道以作為加工氣體。 因此在圖1所見之氟體流動,即流動方向,以及基板3之 運輸方向’從左往右流到抽出裝置13。 在通過連續式反應爐之其它方式’基板3通過不同的區 段5' 6、7、8和9。在區段間之邊界係藉由各種情況下之虛 線表不。在區段5有一連續式反應爐之加熱區域,區段6至7 形成反應區域,而冷卻區域設置在連續式反應爐之區段8和 9。该連續式反應爐包括在區段5之加熱裝置丨〇,即加熱區 201229448 域。還有加熱器11設置於區段6和7,即反應區域,以維持 在反應區域内之限定溫度。 冷卻裝置12設置於每一個區段8和9 ’即冷卻區域。在 區段8之下游端,即冷卻區域之中段範圍,提供一抽出裝置 13,以從連續式反應爐之隧道抽出加工氣體。一在冷卻區 域之第二區段9之無硒氣氛係藉由在區段8末端之抽出裝置 13而達到。在此方式中,在區段9之穩定冷卻為可能的。 在本發明之架構中,在連續式反應爐之中間區域,更 明確的為區段6和7,提供一截斷面變窄之連續式反應爐之 隨道。該截斷面變窄係藉由頂蓬元件15而達成。該頂蓬元 件15延伸至整個反應區域,即區段6和7。該頂蓬元件15和 其實施例係連同圖2至圖7之描述而更詳細解釋。 一導引元件16設置於頂蓬元件15之上游,並提供導引 該加工氣體通過連續式反應爐之隧道以流動至側通道(圖1 未顯示)。在導引元件16之下游端設置一前方保護端緣17, 其向下突出至通道或連續式反應爐之自由截斷面。一後方 保護端緣18以同樣方式設置在頂蓬元件15之下游。該前方 保護端緣17和後方保護端緣18在保護端緣17和18之間產生 穩定之流動’使在反應區域内達到均勻流動區域。還有輸 送裝置20,其提供輸送基板3通過連續式反應爐。 根據本發明在圖1之隧道反應爐之功能方式,接著將連 同以下圖式而解釋,其中以下圖2至7之同一參考符號係用 於如圖1之同一物件。因此,並非所有的參考符號為再連同 圖2至7而詳細解釋,而是參考關於圓1之解釋。S 8 201229448 Anaerobic. Sluice and/or pollution. The door may have a mechanical reading or a slider, and preferably each inlet port has a gas gate. The use of the gas gate prevents the assembly from being associated with the gas inlet of the inlet to supply the process gas to the gas gate design as a whole. This can be achieved by using the gas between the gases, so that the gas flows on both sides of the gate that can be read independently of each other. Preferably, the inlet gate has a plurality of inlet openings or slits, and the openings are used for gas gates, and at least one of the openings serves as a carcass population. In the representative embodiment, the gas gate and gas population may also be split into two components. This provides the advantage of more flexibility in device configuration. Preferably, the process gas is introduced directly into the continuous extraction furnace of the continuous reaction furnace at the gas inlet to extract the process gas, which is preferably disposed downstream of the intermediate section. Introduction and extraction at specific locations within the tunnel provides the advantage of determining the direction of flow and establishing the state of the continuous reactor. In particular, 'reducing selenium and/or sulfur condensation upstream of the intermediate section, for example. Preferably, a heater is disposed in the intermediate section. This provides a defined temperature profile' and can be set or adjusted within the reaction zone, which preferably includes the inter-t segment or a plurality of intermediate segments. Preferably, the track comprises a heating zone, a reaction zone and a cooling zone. The intermediate section is preferably disposed in the reaction zone. In this case, one of the areas can explicitly include several sections. Thus, the reaction zone is exemplified by preferably including at least two sections to establish a conversion distance of sufficient length. It is expressly contemplated by the present invention that it is arranged such that a discontinuity exists between the segments ', for example, a canopy element or a guide bead. Short breaks of this type are preferably shorter than the tunnel width and are a secondary important flow. The gas inlet is preferably disposed at an upstream end of the section located in the heating zone. Preferably, the above-described guiding element is located in the heating zone, preferably in the transition to the reaction zone, such that the flow state upstream of the reaction zone is defined such that there is only a downstream flow state defining the guiding element within the reaction zone. As mentioned above, the front protective edge is preferably located at the end of the guiding element or at the beginning of the canopy element. The cooling zone in turn includes at least one section or, in some cases, a plurality of sections depending on the length of the cooling zone. Preferably, the extraction means is disposed in the cooling zone, particularly preferably at the downstream end of the first section of the cooling zone. In this method, further reaching the downstream section of the cooling zone 'which is free of cats and/or sulfur, or mostly free of station and/or sulfur atmosphere' allows further cooling to occur without cats and/or Contains no sulphur and no condensation of hydrazine and/or sulphur occurs. At the end of the last section, which is part of the cooling zone' preferably further has a gate which prevents oxygen from penetrating from the outside into the continuous reactor. Another aspect of the invention relates to the use of a feature of the present invention for the thermal conversion of a continuous reactor or preferably a metal precursor disposed on a substrate, in particular with respect to the conversion of the metal precursor layer to Conversion of the CIGSS layer. In addition to the above advantages, the present invention has the particular advantage that it produces a more or less stable stable or stabilized flow to convert the precursor layer so that a uniform CIGSS layer can be produced. A lower canopy with a guiding element whose guiding bead and protective end edge increase their respective individual effects, although each of these methods 201229448 is individually capable, other independent methods, or improved metal precursor layer conversion Flow status. Preferred embodiments of the present invention will be described in detail below on the basis of the drawings. In Fig. 1, a schematic view of a vertical cross section in a longitudinal section is shown in the continuous reactor according to the present invention. In particular, the description of the breakage of the entrance gate and the exit gate 2 has been omitted. The schematic diagram of the continuous reaction furnace shown in Fig. 1 can be advantageously used to heat convert the precursor layer to (: 1 (} 53 layers) before being disposed on the substrate 3. For details of the related method, reference should be made to the aforementioned The substrate 3 is supplied to the continuous reactor via the inlet gate 1 and the inlet gate includes a plurality of openings. One of the openings forms a gas gate during operation to ensure that the interior of the continuous reactor is flawless. The outlet gate 2 likewise contains a gas gate. At least one opening in the inlet gate 1 is used as a gas gate, wherein the opening is located at the most downstream of the conveying direction of the inlet gate. The opening is designed as a narrow groove. In the embodiment, nitrogen gas is directly supplied to the continuous reaction furnace via the gas inlet of the inlet gate as a processing gas. Therefore, the fluorine body flow, that is, the flow direction, and the transportation of the substrate 3 as seen in FIG. The direction 'flows from left to right to the extraction device 13. In other ways through the continuous reactor, the substrate 3 passes through different sections 5' 6, 7, 8 and 9. The boundaries between the sections are by various conditions. under The dotted line shows no. In section 5 there is a heating zone for the continuous reactor, sections 6 to 7 form the reaction zone, and the cooling zone is arranged in sections 8 and 9 of the continuous reactor. The continuous reactor is included in the zone. The heating device of segment 5, i.e., the zone of heat zone 201229448. There is also a heater 11 disposed in sections 6 and 7, i.e., the reaction zone, to maintain a defined temperature within the reaction zone. Cooling device 12 is disposed in each zone 8 and 9' are cooling zones. At the downstream end of section 8, i.e. the middle section of the cooling zone, an extraction device 13 is provided to extract the process gas from the tunnel of the continuous reactor. A second section in the cooling zone The selenium-free atmosphere of 9 is achieved by means of a withdrawal device 13 at the end of section 8. In this manner, stable cooling in section 9 is possible. In the framework of the invention, in the middle of a continuous reactor The region, more specifically for sections 6 and 7, provides a continuous reaction furnace with a narrowed cross-section. The narrowing of the cross-section is achieved by the canopy element 15. The canopy element 15 extends throughout Reaction zone, ie zones 6 and 7. The awning element 15 and its embodiments are explained in more detail in connection with the description of Figures 2 to 7. A guiding element 16 is disposed upstream of the canopy element 15 and provides a tunnel for directing the process gas through the continuous reaction furnace. Flow to the side channel (not shown in Figure 1.) A downstream protective edge 17 is provided at the downstream end of the guiding element 16, which projects downwardly to the free section of the channel or continuous reactor. A rear protective edge 18 The same is provided downstream of the canopy element 15. The front protective edge 17 and the rear protective edge 18 create a stable flow between the protective edges 17 and 18 to achieve a uniform flow area in the reaction zone. Apparatus 20 for providing a transport substrate 3 through a continuous reactor. The functional mode of the tunnel reactor of Figure 1 in accordance with the present invention will be explained in conjunction with the following figures, wherein the same reference numerals of Figures 2 through 7 below are used for The same object as in Figure 1. Therefore, not all reference symbols are explained in detail in conjunction with Figs. 2 through 7, but reference is made to the explanation about circle 1.

!2 S 201229448 圖2所示為一連續式反應爐中頂蓮以下之高度地水平 投影示意圖;該氣體流動之方向和輸送方向為藉由箭頭21 所指示。部分的氣體流動在導引元件16分開。該導引元件 16之功能係藉由前方保護端緣丨7以強化,其也減少在導引 元件16下面之截斷面。該導引元件丨6將部份氣流導引至二 個側通道22 ’該側通道係藉由設置在連續式反應爐之頂蓮 元件15而形成,並在頂蓮元件15之任一側。導引珠23也設 置在頂蓬元件15之下側,更佳為形成側通道22,其連同以 下圖式作更詳細地解釋。 在圖式中所示之較佳實施例,該頂逢元件15減少連續 式反應爐在中間區段6和7之區域内之自由截斷面,使其高 度對應於在未減少高度之區段5,8和9之通道内總高度之50 %和60%之間《保護端緣17和18造成進一步減少在保護端 緣17和18以下區域之高度’使其剛好在連續式反應爐之截 斷面之總高度之40%至50% 。在此方法中,在相互影響之 側通道22中’ 一基板3上之穩定氣流在反應區域内產生,以 達到一物質轉換為均勻CIGSS層之均勻轉換》 關於較佳實施例之更佳理解,圖3至7所示為連續式反 應爐之截斷面剖視圖。於剖視圖中,部分細節,如加熱器 11,為了更清楚而備省略。 在圖3中,一略圖所示為各個斷面之位置。除此之外, 在圖3的說明為在圖2說明之重複,即為在連續式反應爐之 頂蓮以下之水平投影。 13 201229448 圖4為在連續式反應爐之區段5 (即加熱區域)中_ 之〇:Γ。該氣體空間25在基板3之上,其橫臥於輸 、裝置20之上,且該氣體空間25並未減少。 圖5所示為區段5末端之下游位置,即自加熱區域輸送 至反應區域。在此位置,導^件16已㈣在基板3上之氣 體空間25 ’以迫使加工氣體橫向於側通道之方向(未顯示 於圖4和5 )。 在圖6之斷面C-C,進一步設置於前方保護端緣17之下 游。頂蓮元件15具有一寬度,其實質上對應於輸送裝置2〇 之寬度。㈣方法中’錢體$間25内有一完全穩定之流 動在整個基板3之上,其通常較輸送裝置2〇略為狹窄。 在頂蓬元件15之側邊為側通道22,其導入大部分之加 工氣體被導引。在與前方保護端緣之結合,側通道22產生 一固定之背壓,其或高於或低於在前方保護端緣17上方之 背壓區域,使更穩定和均勻之氣流在前方保護端緣17之下 游’或在基板3上方之氧體空間25内’或在頂蓮元件15之區 域内達到。 在更下游’在圖7之斷面D-D所示為導引珠23如何附加 地定界側通道22。在此方式中1在側通道22之氣流,能更 好的從流動於頂逢元件1 5和基板3間之區域而分離。導引珠 23並沒有流動於頂蓬元件15之整個長度之上,然而較佳為 導引珠23至少保護頂蓮元件15之一半長度。應注意的是, 在圓4至7之頂蓬元件1 5和導引元件16係顯示部分附加地連 結於連續式反應爐内随道之頂蓬。同樣地,導引元件16和 201229448 頂蓬元件15可與隧道設計為一整體’這同樣地適用於保護 端緣和導引珠。 該側通道2 2較佳為佔有連續式反應爐内隧道之總宽度 至少5% ’這將達到足夠之寬度和足夠之側通道22截斷面。 在導引珠23之區域内,其導引珠23下方之剩餘高度,較佳 為減少至低於50%之隧道(如圖4之截斷面)之總高度,以 達到氣流之分離。 在代表實施例之後方保護端緣18中,係設置於區段8 (即冷卻區域)之起點。在此情況下,後方保護端緣】8並 未固定於頂蓬元件15之下側面,而較佳為從隧道頂蓬向下 突出。 【圖式簡單說明】 圖1係根據本發明通過連續式反應爐中垂直剖面之縱向剖 面示意圖。 圖2係為圖1連續式反應爐中頂蓮以下之水平投影之簡化示 意圖。 圖3係根據本發明出於圖1示意圖之連續式反應爐中圖4至7 之各種剖面位置。 圖4係出於圖1示意圖中通過連續式反應爐之第—垂直戴斷 面。 圖5係根據本發明出於圖1示意圖中通過連續式反應爐之另 一截斷面。 圖6係出於圖1示意圖中通過連續式反應爐之另一戴斷面。 201229448 圖7係根據本發明出於圖丨中通過連續式反應爐之另一截斷 面。 【主要元件符號說明】 1入口閘 3基板 10加熱裝置 12冷卻裝置 15頂蓮元件 17前方保護端緣 20輸送裝置 22側通道 25氣體空間 2出口閘 5, 6, 7, 8, 9 區段 11加熱器 13抽出裝置 16導引元件 18後方保護端緣 21箭頭(流動方向) 23導引珠!2 S 201229448 Figure 2 shows a high level horizontal projection of the ceiling in a continuous reactor; the direction and direction of the gas flow is indicated by arrow 21. Part of the gas flow is separated at the guiding element 16. The function of the guiding element 16 is reinforced by the front protective edge 丨7, which also reduces the cross-section underneath the guiding element 16. The guiding member 丨6 directs a portion of the airflow to the two side channels 22' which are formed by the top member 15 disposed in the continuous reactor and on either side of the top member 15. The guide bead 23 is also disposed on the underside of the canopy member 15, more preferably forming a side channel 22, which is explained in more detail in conjunction with the following figures. In the preferred embodiment illustrated in the drawings, the ejector element 15 reduces the free cross-section of the continuous reactor in the region of the intermediate sections 6 and 7 such that its height corresponds to the section 5 where the height is not reduced. Between 50% and 60% of the total height in the channels of 8 and 9 "Protection of the edges 17 and 18 causes further reduction in the height of the area below the protective edges 17 and 18" to make it just in the section of the continuous reactor 40% to 50% of the total height. In this method, a stable gas flow on a substrate 3 in the side channel 22 that interacts with each other is generated in the reaction zone to achieve a uniform conversion of a substance into a uniform CIGSS layer. A better understanding of the preferred embodiment, 3 to 7 are cross-sectional views showing a cross section of a continuous reactor. In the cross-sectional view, some details, such as the heater 11, are omitted for clarity. In Fig. 3, a sketch shows the position of each section. In addition, the description in Fig. 3 is repeated as illustrated in Fig. 2, i.e., horizontal projection below the top of the continuous reactor. 13 201229448 Figure 4 shows the _: Γ in section 5 (ie the heating zone) of the continuous reactor. The gas space 25 is above the substrate 3, which lies horizontally above the transport, device 20, and the gas space 25 is not reduced. Figure 5 shows the downstream position of the end of section 5, i.e., transported from the heated zone to the reaction zone. In this position, the guide member 16 has (iv) the gas space 25' on the substrate 3 to force the process gas transverse to the side channels (not shown in Figures 4 and 5). In section C-C of Fig. 6, it is further disposed below the front protective edge 17. The apex element 15 has a width that substantially corresponds to the width of the delivery device 2〇. (d) In the method, there is a completely stable flow in the middle of the money body 25 over the entire substrate 3, which is generally slightly narrower than the conveying device 2 . On the side of the canopy element 15 is a side channel 22 which is directed to introduce a majority of the processing gas. In combination with the front protective edge, the side channel 22 produces a fixed back pressure that is either above or below the back pressure region above the front protective edge 17 to provide a more stable and uniform airflow at the front edge. Downstream 17 is either 'in the oxygen space 25 above the substrate 3' or is reached in the region of the rosette element 15. Further downstream, it is shown in section D-D of Fig. 7 how the guide bead 23 additionally delimits the side passage 22. In this manner, the air flow in the side passage 22 can be better separated from the region flowing between the top member 15 and the substrate 3. The guide bead 23 does not flow over the entire length of the canopy member 15, however, it is preferred that the guide bead 23 protects at least one half of the length of the top member 15. It should be noted that the canopy element 15 and the guiding member 16 of the circles 4 to 7 are additionally connected to the canopy in the continuous reaction furnace. Similarly, the guiding element 16 and the 201229448 canopy element 15 can be designed integrally with the tunnel' which applies equally to the protective end edge and the guiding bead. Preferably, the side passages 2 2 occupy at least 5% of the total width of the tunnel in the continuous reactor. This will achieve a sufficient width and sufficient cross-section of the side passages 22. In the region of the guide bead 23, the remaining height below the guide bead 23 is preferably reduced to a total height of less than 50% of the tunnel (as shown in Fig. 4) to achieve separation of the airflow. In the protective edge 18 after the representative embodiment, it is set at the beginning of the section 8 (i.e., the cooling zone). In this case, the rear protective edge 8 is not fixed to the lower side of the canopy member 15, but preferably protrudes downward from the tunnel canopy. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic longitudinal cross-sectional view through a vertical section of a continuous reactor in accordance with the present invention. Figure 2 is a simplified schematic representation of the horizontal projection below the apex in the continuous reactor of Figure 1. Figure 3 is a cross-sectional view of Figures 4 through 7 of the continuous reactor of Figure 1 in accordance with the present invention. Figure 4 is the first vertical wear surface of the continuous reactor in the schematic of Figure 1. Figure 5 is a cross section through a continuous reactor in accordance with the present invention for the schematic of Figure 1. Figure 6 is another cross-section through the continuous reactor in the schematic of Figure 1. 201229448 Figure 7 is another cross-section through a continuous reactor in accordance with the present invention. [Main component symbol description] 1 inlet gate 3 substrate 10 heating device 12 cooling device 15 top lotus element 17 front protective edge 20 conveying device 22 side channel 25 gas space 2 outlet gate 5, 6, 7, 8, 9 section 11 Heater 13 extraction device 16 guide element 18 rear protection edge 21 arrow (flow direction) 23 guide beads

16 S16 S

Claims (1)

201229448 七、申請專利範圍: I 一種連續式反應爐,其使設置於基板(3)之金屬前驅 物在氣流内熱轉換,特別使金屬前驅物層轉換為CIGSS層, 並利用連續式隧道,其依序包括複數個區段(5, 6, 7, 8, 9), 特徵為在其中一個中間區段(6, 7 )之隧道截面係比相鄰於 中間區段之區段(5, 8)更小。 2. 如申請專利範圍第1項所述之連續式反應爐,其特 徵為在中間區段(6, 7 )之頂蓬元件(15 )係設置於隧道之 頂蓬。 3. 如申請專利範圍第1或2項所述之連續式反應爐,其 特徵為至少一面向輸送方向之側面通道(22 )在中間區段 (6, 7)中,並設置於截面。 4. 如申請專利範圍第3項所述之連續式反應爐,其特 徵為藉由將導引元件(16)設置於頂蓬元件(15)之隧道 上游’並利用至少部份的氣體流動通過隧道以導引至側面 通道(22)。 5. 如申請專利範圍第3或4項所述之連續式反應爐,其 特徵為至少一導引珠(23)設置於隧道之輸送方向。 6. 如申請專利範圍第5項所述之連續式反應爐,其特 徵為至少一導引珠(23 )至少部份地定界該側面通道(22 )。 7. 如申請專利範圍第5或6項所述之連續式反應爐,其 特徵為至少一導引珠(23 )設置於頂蓮元件(丨5 )之側面 邊緣。 201229448 8·如申請專利範圍第3至7項所述之連續式反應爐,其 為至少—保護端緣(Π,18)設置於頂蓮元件(15)上 或導引元件(16)上》 9_如前述申請專利範圍中之一項所述之連續式反應 爐’其特徵為在中間區段(6, 7)區域内之㈣之高度和/ 或截面積,相較於相鄰隨道之截面積至少降低。 10.如前述申請專利範圍中之一項所述之連續式反應 爐,其特徵為氣體人口設置於随道之H並導入加工 氣體至隧道和/或一抽出裝置(13),該抽出裝置(13)設 置於中間區段(6, 7 )之下游而抽出加工氣體。 11·如前述申請專利範圍中之一項所述之連續式反應 爐,其特徵為在隧道之第一端提供一入口閘(丨)和/或在 隧道之第二端提供一出口閘(2)。 12. 如申請專利範圍第II項所述之連續式反應爐’其 特徵為每個入口閘(丨)和/或出口閘(2 )包括一氣體閘。 13. 如申請專利範圍第11或12項所述之連續式反應 爐’其特徵為該入口閘(1 )包括氣體閘。 14. 一種申請專利範圍第1至13項中之一項所述連續 式反應爐之用途,,其係使設置於基板(3)之金屬前驅物層 在氣流内熱轉換,特別使金屬前驅物層轉換為CiGSS層。 八、圖式(請見下頁):201229448 VII. Patent application scope: I. A continuous reaction furnace which thermally converts a metal precursor disposed on a substrate (3) into a gas stream, in particular, converts a metal precursor layer into a CIGSS layer, and utilizes a continuous tunnel. The sequence includes a plurality of segments (5, 6, 7, 8, 9) characterized by a tunnel section in one of the intermediate sections (6, 7) being adjacent to a section adjacent to the intermediate section (5, 8) )smaller. 2. The continuous reactor according to claim 1, wherein the roof member (15) of the intermediate section (6, 7) is disposed in the roof of the tunnel. 3. The continuous reactor according to claim 1 or 2, characterized in that at least one side channel (22) facing the conveying direction is in the intermediate section (6, 7) and is disposed in the section. 4. The continuous reactor of claim 3, wherein the guiding element (16) is disposed upstream of the tunnel of the canopy element (15) and flows through at least a portion of the gas The tunnel is guided to the side channel (22). 5. The continuous reactor according to claim 3, wherein the at least one guide bead (23) is disposed in the conveying direction of the tunnel. 6. The continuous reactor of claim 5, wherein the at least one guiding bead (23) at least partially delimits the side channel (22). 7. The continuous reactor of claim 5 or 6, wherein at least one guide bead (23) is disposed on a side edge of the top member (丨5). 201229448 8. The continuous reactor according to claim 3 to 7, wherein at least the protective edge (Π, 18) is disposed on the top member (15) or the guiding member (16) 9_Continuous reactor according to one of the preceding claims, characterized in that the height and/or cross-sectional area of (4) in the region of the intermediate section (6, 7) is compared to the adjacent lane The cross-sectional area is at least reduced. 10. A continuous reactor according to one of the preceding claims, characterized in that the gas population is arranged in the channel H and the process gas is introduced into the tunnel and/or a withdrawal device (13), the extraction device ( 13) Set downstream of the intermediate section (6, 7) to extract the process gas. A continuous reactor according to one of the preceding claims, characterized in that an inlet gate (丨) is provided at the first end of the tunnel and/or an outlet gate is provided at the second end of the tunnel (2) ). 12. The continuous reactor as described in claim 2, characterized in that each inlet gate (丨) and/or outlet gate (2) comprises a gas gate. 13. The continuous reactor as described in claim 11 or 12, wherein the inlet gate (1) comprises a gas gate. 14. Use of a continuous reactor according to one of claims 1 to 13 for thermally converting a metal precursor layer disposed on a substrate (3) in a gas stream, particularly a metal precursor The layer is converted to a CiGSS layer. Eight, schema (see next page):
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