201229276 六、發明說明： 【發明所屬之技術領域】 本發明係關於用以於基板表面形成被覆膜之磁控減鑛模 式之成膜裝置及成膜方法，特別係關於具有於靶材之表面 上，形成以一定週期變動之磁場之磁場形成機構之磁控濺 鑛模式之成膜裝置，及使用該裝置之成膜方法。 本申請案係基於且主張2010年11月18日於日本申請的曰 本專利申請案第2010-257863號之優先權；此處以引用之 方式將其之内容併入本文中。 【先前技術】 以往’例如半導體元件之製作之成膜步驟中，係使用利 用濺鍍成膜法之成膜裝置（以下稱作「濺鍍裝置」 濺鍍裝置中，依據施加於電極間之電壓或電極構造等， 存在夕種者。其中有磁控濺鍵裝置。磁控電鐘裝置係藉由 表面上配置有靶材之靶材電極之背面側上配置有磁場形成 機構而構成濺鍍陰極者，其具有可加大成膜速度，提高生 產性之優點。 如该等之磁控濺鍍裝置，有固定磁場之類型者，及以一 疋週期變動磁場之類型者。其中，藉由以一定週期變動磁 場，可改善成膜之膜厚分佈，謀求提高靶材之使用效率及 壽命者，基於此理由，故主要係使用變動磁場之類型者。 變動磁場之磁控濺鍍裝置，有搖動配置於靶材之背面側 之磁石之裝置，或以靶材之中心為軸，偏心旋轉磁石者 (例如參照專利文獻1}。$等之裝置中，_㉟為磁場之變動 160272.doc 201229276 週期係一定者，而不管形成於基板上之膜厚。 [先行技術文獻] [專利文獻] [專利文獻1]曰本特開平9_41137號公報 【發明内容】 [發明所欲解決之問題] 然而，近幾年之㈣裝置中，為提高㈣之性能，而媒 求義時之投人功率之增加。藉此’使更短時間之成膜成 為可能’可實現產能之提高。 又，如該等用途之滅鍍裝置’於咖及光學膜等之成膜 步驟中’所要求之膜厚逐漸變薄，且強烈要求可以良好膜 厚均一性成膜。 ,'J如：上所4之偏心旋轉磁體之磁控賤鍍裝置之情 形’為進-步提高臈厚均一性’較好為相對磁體之旋轉週 期：成膜時間係足夠長者。然而，隨著薄膜化及投入功率 成膜時間被短縮化’故存在相對磁體之旋轉週 期，成膜時間並不足夠之問題。 例如 "目對磁石之旋轉週期係1秒（60 rpm: 60轉/分 ’若賤鍍成膜時間係設為h5秒，則於賤鑛成膜時^ ㈣磁石成為旋轉丨圈半者。該情形中，於Μ秒之㈣ 、，’中’最後之0.5秒係成為膜厚不均一 厚分佈大Λ成俨 為又知。換§之，於滅鍍成膜時間。秒，磁石 ^ I故㈣—圈36G°之餘剩之旋轉⑽。）將形成不 均一之膜厚。 160272.doc 201229276 相對該問題，考慮有藉由抱一丰上丨1 步加快磁石之旋轉速度而 膜厚分佈之方法。然而，藉由加快旋轉速度，有導致 成膜裝置之消耗電力增加或旋轉裝置之短壽命化之問題。 本發明係考慮該等情事而完成者，其目的係在於提供一 種可謀求膜厚均-化，抑制_時之電力消耗，且可實現 使磁石旋轉之驅動機構之長壽命化之成膜裝置及成膜方 法。 [解決問題之技術手段] 為達成上述之目的，本發明係提供如下。 ⑴本發明之—態樣之成膜裝置包含：腔室，於其内部配置 藉由濺鍍成膜而形成被覆膜之基板；靶材，其配置於該腔 室，且包含上述被覆膜之形成材料；磁場形成裝置，其配 置於上述靶材之背面側，於上述靶材之表面上形成以一定 週期變動磁場；及控制裝置’其以使形成期望的膜厚之被 覆膜所需之濺鍍成膜時間成為上述磁場之變動週期之整數 倍之方式’設定上述磁場之變動週期。 (2) 如上述（1)記載之成膜裝置中，其亦可構成為上述磁場 形成裝置包含從上述靶材之中心偏心而配置之磁石，及以 上述靶材之中心為軸使該磁石偏心旋轉之驅動裝置；上述 控制裝置以使上述濺鑛成膜時間成為上述磁石之旋轉週期 之整數倍之方式，設定上述磁石之旋轉週期。 (3) 如上述（1)或（2)記載之成膜裝置中，其亦可構成為上述 控制裝置具有監視濺鍍放電之上升延遲之監視功能，且於 感測到上述濺鍍放電之上升延遲之情形時，以與上述濺鐘 160272.doc 201229276 放電之上升延遲時間相同之時間’進行使濺鍍之結束時間 延遲之控制。 (4)本發明之另一態樣係使用成膜裝置之成膜方法該成膜 裝置包含：腔室，於其内部配置藉由濺鍍成膜而形成被覆 膜之基板；靶材，其配置於該腔室内，且包含上述被覆膜 之形成材料；及磁場形成裝置，其配置於上述靶材之背面 側，於上述靶材之表面上形成以一定週期變動之磁場；且 該成膜方法係以使形成期望的膜厚之上述被覆膜所需之濺 鍍成膜時間成為上述磁場之變動週期之整數倍之方式，設 定上述磁場之變動週期，而進行上述磁場形成裝置之控 制。 (5) 上述（4)記载之成膜方法中，亦可為上述磁場形成裝置 包含從上述乾材之中心偏心而配置之磁石，及以上述靶材 之中心為軸使上述磁石偏心旋轉之驅動裝置；且以使上 述濺鍵成膜時間成為上述磁石之旋轉時間之整數倍之方 式，設定上述磁石之旋轉週期。 (6) 上述（4)或（5)記載之成膜方法中，亦可藉由監視濺鍍放 電之上升延遲而於感測到該濺鍍放電之上升延遲時，以與 上述濺鍍放電之上升延遲時間相同之時間，使滅錢之結束 時間延遲。 [發明效果] 根據上述（1)或（4)記載之態樣’於包含在乾材之表面上 形成以一疋週期變動之磁場之磁場形成裂置之成膜穿置 係’藉由包含以形成所需膜厚之被覆膜所需之濺鍍成膜時 160272.doc 201229276 間成為磁場之變動週期之整數倍之方式’進行設定變動週 期控制之控制裝置之構成，可使膜厚分佈更加均一。 又，上述（2)或（5)之情形中，磁場形成裝置包含從乾材 之中心偏心而配置之磁石，及以乾材之中心為轴，旋轉磁 石之驅動裝置。該情形中，因使磁石之旋轉速度降低，故 可抑制電力消耗，而實現裝置之長壽命化。 進而，上述（3)或（6)之情形中，為含有監視功能者。該 情形中’即使濺鑛放電之上升已延遲’因錢鑛成膜時間不 變，故濺鍍放電之上升延遲對膜厚分佈並未造成影響。 【實施方式】 以下，對本發明之實施形態，參照圖式進行詳細說明。 且，本發明不僅限定於以下之實施形態，基於本發明之技 術思想，可進行種種變形。 (濺鍍裝置） 圖1係本實施形態之濺鍍裝置1(成膜裝置）之概略剖面 圖。本實施形態中’濺鍍裝置1係作為磁控濺鍍裳置而構 成。濺鐘裝置1包含有氣密密封内部之真空腔室2，配置於 該真空腔室2内部之基板支持台3，及濺鏟陰極4等。 真空腔室2於内部畫分出處理室5，經由未圖示之真空排 氣機構，可將處理室5減壓至特定真空度。又，於真空腔 室2之特定位置安裝有用以於處理室5之内部導入氬氣等之 處理氣體或氧、氮等之反應性氣態之氣體導入喷嘴（未圖 示）。 基板支持台3(亦稱作載物台）係使用未圖示之溫度調整 160272.doc .η.201229276 VI. Description of the Invention: [Technical Field] The present invention relates to a film forming apparatus and a film forming method for forming a magnetically controlled ore-reducing mode of a coating film on a substrate surface, particularly for a surface having a target In the above, a film forming apparatus of a magnetron sputtering mode in which a magnetic field forming mechanism of a magnetic field which changes in a certain period is formed, and a film forming method using the same are used. The present application is based on and claims the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the present disclosure. [Prior Art] Conventionally, for example, in a film forming step of fabricating a semiconductor device, a film forming apparatus using a sputtering film forming method (hereinafter referred to as a "sputtering device" sputtering device is used, depending on a voltage applied between electrodes Or the electrode structure, etc., there is a kind of person. Among them, there is a magnetron sputtering device. The magnetron clock device is configured by a magnetic field forming mechanism on the back side of the target electrode on which the target is disposed on the surface to form a sputtering cathode. The utility model has the advantages that the film forming speed can be increased and the productivity is improved. For example, the magnetron sputtering device has a type of a fixed magnetic field, and a type that changes the magnetic field in a cycle, wherein The cyclically varying magnetic field can improve the film thickness distribution of the film formation and improve the efficiency and life of the target. For this reason, the type of the variable magnetic field is mainly used. The magnetron sputtering device with a variable magnetic field has a shaking configuration. In the device of the magnet on the back side of the target, or the center of the target as the axis, the magnet is eccentrically rotated (for example, refer to Patent Document 1). In a device such as $, _35 is a change in the magnetic field. 0272.doc 201229276 The cycle is a constant, regardless of the film thickness formed on the substrate. [Prior Art Document] [Patent Document] [Patent Document 1] Japanese Patent Application Laid-Open No. Hei 9-41137 [Summary of the Invention] Problem] However, in the (4) devices in recent years, in order to improve the performance of (4), the increase in the power of the media during the mediation has made it possible to increase the productivity by making the film formation in a shorter time. For example, in the film-forming step of the coffee and optical film, the film thickness required for such a purpose is gradually thinned, and it is strongly required to form a film with uniform film thickness. 'J Ru: Shangshang The case of the magnetron-controlled iridium plating device of the eccentric rotating magnet of '4 is to increase the thickness uniformity of the step-by-step' is preferably the rotation period of the relative magnet: the film forming time is sufficiently long. However, with the thin film formation and the input power The film time is shortened. Therefore, there is a problem that the film formation time is not sufficient relative to the rotation period of the magnet. For example, the rotation period of the magnet is 1 second (60 rpm: 60 rpm). Set to h5 seconds, then in the mine At the time of film formation ^ (4) The magnet becomes the half of the rotating circle. In this case, in the last 0.5 seconds of the second (4) and the 'middle', the film thickness is uneven and the thickness distribution is large. , in the time of the filming of the film. Second, the magnet ^ I (four) - the remaining rotation of the circle 36G ° (10).) will form a non-uniform film thickness. 160272.doc 201229276 Relative to this problem, consider having to take a picture The method of accelerating the rotational speed of the magnet and increasing the thickness of the magnet. However, by increasing the rotational speed, there is a problem that the power consumption of the film forming apparatus increases or the life of the rotating device becomes shorter. The present invention considers such a situation. The object of the present invention is to provide a film forming apparatus and a film forming method which can achieve a longer film thickness, suppress power consumption, and can extend the life of a driving mechanism for rotating a magnet. [Technical means for solving the problem] In order to achieve the above object, the present invention is provided as follows. (1) A film forming apparatus according to the present invention includes: a chamber in which a substrate on which a coating film is formed by sputtering to form a film; and a target disposed in the chamber and containing the coating film a forming material; a magnetic field forming device disposed on a back side of the target, forming a magnetic field that changes at a predetermined period on a surface of the target; and a control device that is required to form a coating film having a desired film thickness The sputtering time is set to be an integral multiple of the fluctuation period of the magnetic field, and the fluctuation period of the magnetic field is set. (2) The film forming apparatus according to the above (1), wherein the magnetic field forming apparatus includes a magnet that is eccentrically disposed from a center of the target, and the magnet is eccentrically centered on a center of the target a driving device for rotating; wherein the control device sets the rotation period of the magnet so that the sputtering film forming time becomes an integral multiple of a rotation period of the magnet. (3) The film forming apparatus according to (1) or (2) above, wherein the control device may have a monitoring function for monitoring a rise delay of the sputtering discharge, and sensing an increase in the sputtering discharge. In the case of delay, the control of delaying the end time of the sputtering is performed at the same time as the rise delay time of the discharge of the above-mentioned splash clock 160272.doc 201229276. (4) Another aspect of the present invention is a film forming method using a film forming apparatus, the film forming apparatus comprising: a chamber in which a substrate on which a coating film is formed by sputtering, and a target; a magnetic field forming device disposed in the chamber and including a material for forming the coating film; and a magnetic field forming device disposed on a back side of the target to form a magnetic field that changes in a predetermined period on a surface of the target; and the film forming In the method, the fluctuation period of the magnetic field is set such that the sputtering film formation time required to form the coating film having a desired film thickness is an integral multiple of the fluctuation period of the magnetic field, and the magnetic field forming apparatus is controlled. (5) The film forming method according to (4), wherein the magnetic field forming apparatus includes a magnet that is eccentrically disposed from a center of the dry material, and the magnet is eccentrically rotated about a center of the target And a driving device; and setting a rotation period of the magnet so that the sputtering bond forming time is an integral multiple of a rotation time of the magnet. (6) In the film forming method according to (4) or (5) above, when the rise delay of the sputtering discharge is sensed by monitoring the rise delay of the sputtering discharge, the sputtering discharge may be performed. The same delay time as the rise delay time delays the end of the money-killing period. [Effect of the Invention] The film-forming piercing system in which a magnetic field formed by a magnetic field that changes in a cycle of one cycle is formed on the surface of the dry material by the above-described (1) or (4) is formed by inclusion When the sputtering film required for the coating film of the desired film thickness is 160272.doc 201229276, which is an integral multiple of the fluctuation period of the magnetic field, the control device for setting the fluctuation period control can make the film thickness distribution uniform. . Further, in the case of the above (2) or (5), the magnetic field forming apparatus includes a magnet disposed eccentrically from the center of the dry material, and a driving device for rotating the magnet with the center of the dry material as an axis. In this case, since the rotation speed of the magnet is lowered, power consumption can be suppressed, and the life of the apparatus can be extended. Further, in the case of the above (3) or (6), the monitoring function is included. In this case, 'even if the rise of the splash discharge has been delayed', the deposition delay of the sputter discharge does not affect the film thickness distribution because the filming time of the deposit is not changed. [Embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Further, the present invention is not limited to the following embodiments, and various modifications can be made based on the technical idea of the present invention. (Sputtering Apparatus) Fig. 1 is a schematic cross-sectional view showing a sputtering apparatus 1 (film forming apparatus) of the present embodiment. In the present embodiment, the sputtering apparatus 1 is constructed as a magnetron sputtering. The splashing device 1 includes a vacuum chamber 2 having a hermetically sealed inside, a substrate supporting table 3 disposed inside the vacuum chamber 2, a spatter cathode 4, and the like. The vacuum chamber 2 is internally divided into a processing chamber 5, and the processing chamber 5 can be depressurized to a specific degree of vacuum via a vacuum exhausting mechanism (not shown). Further, a gas introduction nozzle (not shown) for introducing a processing gas such as argon gas or a reactive gas state such as oxygen or nitrogen into the inside of the processing chamber 5 is attached to a specific position of the vacuum chamber 2. The substrate support table 3 (also referred to as a stage) is temperature adjusted 160272.doc.
C 201229276 機構’以可將基板支持台3所載置之基板W加熱至特定溫 度地構成。又，基板W係例如藉由靜電夹頭固定於基板支 持台3。 濺鍍陰極4係由經由絕緣環6，安裝於腔室2上部之乾材 7，及設於靶材電極7之背面側之磁場形成裝置8(磁場形成 機構）等構成。靶材電極7之下表面中，以與基板W平行之 狀態，對向配置之方式，安裝有由成膜於基板|上之包含C 201229276 The mechanism is configured to heat the substrate W placed on the substrate support table 3 to a specific temperature. Further, the substrate W is fixed to the substrate supporting table 3 by, for example, an electrostatic chuck. The sputtering cathode 4 is composed of a dry material 7 attached to the upper portion of the chamber 2 via the insulating ring 6, and a magnetic field forming device 8 (magnetic field forming mechanism) provided on the back side of the target electrode 7. The lower surface of the target electrode 7 is mounted on the substrate|substrate in a state of being aligned with the substrate W in a direction opposite to the substrate W.
Cu、Al、Ti、Ta及磁性材料（Ni、c〇)等之任意材料之靶材 9。又’靶材電極7係連接於直流電源丨5之負極。 磁場形成裝置8係由磁石支持台1〇、固定於磁石支持台 1〇之水久磁石11、及經由旋轉軸12使磁石支持台1〇旋轉之 馬達等之驅動機構13所構成。旋轉軸12係以旋轉軸12之軸 中心與靶材9之中心成為一致地配置，藉此，磁石支持台 10及永久磁石11係可以靶材9之中心為軸而旋轉。 磁場形成裝置8係以可於起材9之表面上使磁束㈣茂， 而形成所需形狀之磁場之構成。如圖2所示，永久磁石H 係由大小不同之環形狀之磁石"a及m構成。磁石lla及 ^之中心係絲材之中心偏心。又，磁石„係外側成為n 極及内侧成為S極地構成’但因㈣9表面之磁場強度係以 絕對值受關注，故亦可以外相彳士、也〇 ,、 上、 了外側成為8極，内側成為N極地構 成磁石。 構成賤鑛裝置！之磁場形成裝置8及驅動機構 ^制裝置犧制機構）予讀制。例如，控^ 使旋轉轴4以特定旋轉速度旋轉。即，使用者可使： 160272.doc 201229276 磁石支持台10之磁石llw所需旋轉速度s( rpm)及旋轉週期 p(秒）旋轉。 進而，控制裝置14係具有自依據濺鍍裝置丨之樣式等決 疋之濺鍍成膜速度及使用者所期望之成膜厚度，計算濺鍍 成膜時間T(秒）之功能。 進而，控制裝置14係具有對應所計算之濺鍍成膜時間 T，決定旋轉週期p之功能。此處，所謂旋轉週期p係磁石 支持台10旋轉1次所需之時間（秒），且於將磁石支持台丨〇之 旋轉速度設為s rpm(旋轉/分）時’係以p=60/s計算之值。 控制裝置14係控制濺鍍成膜時間τ使其成為旋轉週期卩之 整數倍。 即，將濺鍍成膜時間設為T時，以下式i計算旋轉週期 P。η表示整數。 τ=ηχΡ · · ·(式 1) 即’以下式2 ’計算旋轉週期ρ。 Ρ=(1/η)χΤ · · ·(式 2) 藉由以成為藉該等方法算出之旋轉週期ρ之旋轉速度S， 進行使磁石支持台1〇旋轉之控制，而使磁石支持台1〇(永 久磁石11)於濺鍍成膜時間T之期間確實地旋轉η次。 換言之，於濺鍍成膜時間Τ之期間，以使磁石支持台ι〇 以一定速度，確時地（36〇χη)。旋轉，而決定旋轉週期ρ(旋 轉速度S)。當然，亦確實地控制濺鍍成膜進行之時間（濺 鍍成膜時間Τ)。 若考慮電力消耗及驅動機構13之壽命，及於靶材材料内 160272.doc 201229276 產生之渦電流之問題，較好使旋轉速度s減慢（旋轉週期p 較長）。即’較好是η為較小之整數。 然而，若旋轉週期Ρ過長，亦即藉由使旋轉速度s過度減 J·曼，會產生膜厚均一度及驅動馬達之振動等之問題，故較 好預先设定最長旋轉週期Pmax(最低旋轉速度）。經計算之 方疋轉週期P未達最長旋轉週期Pmax之情形時，藉由依序增 大上述計算式之n值進行再次計算，以不超過最長旋轉週 期 Pmax。 另一方面’較好以避免驅動機構13之振動及靶材之局部 溫度上昇之方式，設定最短旋轉週期Pmin(最高旋轉速 度）。即使於n=l之情形中，計算出低於最短旋轉週期Pmin 之旋轉週期P時’於未圖示之顯示裝置上顯示警告後，亦 以最短旋轉週期Pmin進行處理。 又’可於某種程度預測濺鍍成膜時間T之情形時，亦可 採用預先設定相對於濺鍍成膜時間T之旋轉次數（上述之計 算式中之整數η)之方法。 例如，可預測為濺鍍成膜時間Τ為60秒以下之情形中， 於濺鍍成膜時間為1秒以上且未達30秒之情形時，設定為 以濺鍍成膜時間Τ使磁石支持台1 〇旋轉一次的方式進行控 制。又，濺鍍成膜時間Τ為30秒以上60秒以下之情形時， 設定為以濺鍍成膜時間Τ使磁石支持台1 0旋轉2次之方式進 行控制。藉由準備該等資料表，可更加容易地計算旋轉週 期Ρ(旋轉速度S)。 例如’如上述之資料表之情形中，濺鍍成膜時間Τ經計 160272.doc 201229276 算為50秒時， 制。即，算出 即’算出旋轉週期？為（5〇秒/2旋轉=)25秒。A target of any material such as Cu, Al, Ti, Ta, and a magnetic material (Ni, c〇). Further, the target electrode 7 is connected to the negative electrode of the DC power supply 丨5. The magnetic field forming device 8 is composed of a magnet support table 1 , a long-lasting magnet 11 fixed to the magnet support table 1 , and a drive mechanism 13 such as a motor that rotates the magnet support table 1 via the rotary shaft 12 . The rotating shaft 12 is disposed such that the center of the axis of the rotating shaft 12 coincides with the center of the target 9, whereby the magnet support table 10 and the permanent magnet 11 can rotate about the center of the target 9. The magnetic field forming device 8 is configured to form a magnetic field of a desired shape by magnetically beaming the surface of the material 9 . As shown in Fig. 2, the permanent magnet H is composed of magnets of a ring shape of different sizes and a and m. The center of the magnets of the magnets 11a and ^ is eccentric. In addition, the magnet „the outer side is the n pole and the inner side is the S pole. However, since the magnetic field strength of the surface of (4) 9 is concerned with the absolute value, it is also possible to use the outer phase of the gentleman, the squat, the upper and the outer side to be 8 poles, and the inner side. The magnet is formed by the N pole. The magnetic field forming device 8 and the drive mechanism of the boring device are pre-read. For example, the control shaft rotates the rotary shaft 4 at a specific rotational speed. : 160272.doc 201229276 Rotation speed s ( rpm) and rotation period p (seconds) required for the magnet lw of the magnet support table 10. Further, the control device 14 has a sputtering effect depending on the style of the sputtering device or the like. The film formation speed and the film thickness desired by the user are used to calculate the sputtering film formation time T (seconds). Further, the control device 14 has a function of determining the rotation period p corresponding to the calculated sputtering film formation time T. Here, the rotation period p is the time (seconds) required for the magnet support table 10 to rotate once, and when the rotation speed of the magnet support table is set to s rpm (rotation/minute), the system is p= 60/s calculated value. Control The sputtering system forming time τ is set to be an integral multiple of the rotation period 卩. That is, when the sputtering film formation time is T, the rotation period P is calculated by the following formula i. η represents an integer. τ = η χΡ · (Expression 1) That is, the following formula 2 calculates the rotation period ρ. Ρ = (1/η) χΤ · · (Expression 2) is performed by the rotation speed S which is the rotation period ρ calculated by these methods. Controlling the rotation of the magnet support table, the magnet support table 1 (permanent magnet 11) is surely rotated n times during the sputtering film formation time T. In other words, during the sputtering deposition time period, The magnet support table ι〇 is rotated at a certain speed, and the rotation period ρ (rotation speed S) is determined. Of course, the time during which the sputtering film formation is performed is also surely controlled (sputter film formation) Time Τ). Considering the power consumption and the life of the drive mechanism 13, and the eddy current generated by the target material 160272.doc 201229276, it is better to slow down the rotation speed s (the rotation period p is longer). Preferably, η is a smaller integer. However, if the rotation period is too long, that is, borrowing Since the rotation speed s is excessively reduced by J·Man, there is a problem of uniformity of the film thickness and vibration of the drive motor. Therefore, it is preferable to set the maximum rotation period Pmax (the minimum rotation speed) in advance. The calculated square rotation period P When the maximum rotation period Pmax is not reached, the calculation is performed by sequentially increasing the value of n of the above calculation formula so as not to exceed the maximum rotation period Pmax. On the other hand, it is preferable to avoid the vibration of the driving mechanism 13 and the target. The mode of the local temperature rise is set to the shortest rotation period Pmin (the highest rotation speed). Even in the case of n=l, when the rotation period P lower than the shortest rotation period Pmin is calculated, a warning is displayed on the display device not shown. After that, it is also processed in the shortest rotation period Pmin. Further, when the sputtering film formation time T can be predicted to some extent, a method of setting the number of rotations with respect to the sputtering film formation time T (the integer η in the above calculation formula) may be employed. For example, in the case where the sputtering film formation time Τ is 60 seconds or less, when the sputtering film formation time is 1 second or longer and less than 30 seconds, the magnetization support is set by the sputtering film formation time. The stage 1 is rotated once to control. When the sputtering film formation time Τ is 30 seconds or more and 60 seconds or less, the magnet support table 10 is rotated twice by the sputtering film formation time. By preparing these data sheets, the rotation period Ρ (rotation speed S) can be calculated more easily. For example, in the case of the above-mentioned data sheet, the sputtering film formation time is calculated by counting 160272.doc 201229276 as 50 seconds. That is, the calculation is to calculate the rotation period. It is (5 〇 2 / 2 rotation =) 25 seconds.
之電壓。 乂使磁石支持台10旋轉2次之方式進抒控 赛日手間T，輸出濺鍍開始命令及濺鍍結 其監視功能則始終監視濺鍍之放電時 監視功能#監視濺鐘開始命令I出後至濺鐘放電實際開The voltage.乂The magnet support table 10 is rotated twice to enter the control day T, the output sputter start command and the sputter connection monitoring function are always monitored when the discharge of the sputter is monitored. # Monitor the splash clock start command I To the splash clock discharge actually open
化。濺鍍放電之監視係由濺鍍電源内部電壓測定部檢測濺 鍍電源實際輸出，經由類比輸入埠輸入至控制裝置14iPc 而進行者。此處，在將濺鍍電源實際輸出輸入至pc之前之 時間，及將PC之輸出反映至濺鍍電源之實際輸出之前之時 間内，可能會產生無法忽視之時滯（例如〇 5秒）。若控制裝 置之測定週期較慢，則濺鍍時間變長。因時滯係大致一 定，故只需考慮時滯之一定值之時間而提早停止濺鍍即 根據本貫施形態，利用控制裝置丨4以使濺鑛成膜時間τ 成為磁石11之旋轉週期P之整數倍之方式控制磁石支持台 11之旋轉速度S’可使基板w上所形成之膜之膜厚分佈更 力口均一。 又，相較於以往之濺鍍裝置，由於磁石支持台U之旋轉 速度S變低’故可抑制電力消耗，實現濺鍍裝置1之長壽命 160272.doc • 11 · 201229276 化。 進而’控制裝置1 4之監視功能即使在濺鍍放電之上升延 遲之情形中，亦以使濺鍍成膜時間T不變之方式進行控 制’故濺鍍放電之上升延遲不會影響膜厚分佈。 [實施例] 以下揭示實施例，對本發明進行更加詳細說明，但本發 明並不限定於該等之實施例。 <實施例> 實施例中，使用圖1所示之濺鍍裝置1，使Ti膜成膜。作 為基板W，使用φ 200 mm之Si晶圓。又，作為乾材，使用 以Ti之組成比為99%，製作成濺鍍面之直徑為φ 300 mm 者。所成膜之Ti膜之膜厚設為14 nm~21 nm。激錢裝置1之 濺鍍速度係7.0 nm/秒。 又，成膜後測定膜厚分佈d[%]。膜厚分佈d係成膜後， 測定如圖3所示之基板W上之9點之膜厚，於膜厚之最大值 設為Fmax，最小值設為Fmin時，依據下式3算出之值。 d[%] = (Fmax-Fmin)/(Fmax+Fmin)x 100· · •式3 表1顯示其結果。 [表1] 必要膜厚 成膜時間 旋轉速度 膜厚分佈 inml [秒] [rpml ί%1 14.0 2.0 30.0 4.0 15.4 2.2 27.3 4.1 16.8 2.4 25.0 4.0 18.2 2.6 23.1 4.0 -12- 160272.docChemical. The monitoring of the sputtering discharge is performed by the sputtering power supply internal voltage measuring unit detecting the actual output of the sputtering power supply, and inputting it to the control device 14iPc via the analog input port. Here, the time before the actual output of the sputter power supply is input to the pc and the time before the output of the PC is reflected to the actual output of the sputter power supply may cause a time lag that cannot be ignored (for example, 〇 5 seconds). If the measurement period of the control device is slow, the sputtering time becomes longer. Since the time lag is substantially constant, it is only necessary to consider the time of a certain value of the time lag to stop the sputtering early, that is, according to the present embodiment, the control device 丨4 is used to make the sputtering film formation time τ become the rotation period P of the magnet 11 By controlling the rotation speed S' of the magnet support table 11 by an integral multiple, the film thickness distribution of the film formed on the substrate w can be made uniform. In addition, since the rotation speed S of the magnet support table U is lowered as compared with the conventional sputtering apparatus, power consumption can be suppressed, and the long life of the sputtering apparatus 1 can be achieved 160272.doc • 11 · 201229276. Further, the monitoring function of the control device 14 is controlled so that the sputtering film formation time T does not change even in the case where the sputtering discharge is delayed, so that the rise delay of the sputtering discharge does not affect the film thickness distribution. . [Examples] Hereinafter, the present invention will be described in more detail, but the present invention is not limited to the examples. <Examples> In the examples, a Ti film was formed by using the sputtering apparatus 1 shown in Fig. 1 . As the substrate W, a Si wafer of φ 200 mm was used. Further, as a dry material, a composition ratio of Ti of 99% was used, and the diameter of the sputtering surface was φ 300 mm. The film thickness of the formed Ti film is set to 14 nm to 21 nm. The sputtering rate of the money-sending device 1 is 7.0 nm/second. Further, the film thickness distribution d [%] was measured after film formation. After the film thickness distribution d is formed into a film, the film thickness at 9 o'clock on the substrate W as shown in FIG. 3 is measured, and when the maximum value of the film thickness is Fmax and the minimum value is Fmin, the value calculated according to the following formula 3 is obtained. . d[%] = (Fmax-Fmin)/(Fmax+Fmin)x 100· · • Equation 3 Table 1 shows the results. [Table 1] Necessary film thickness Film formation time Rotation speed Film thickness distribution inml [seconds] [rpml ί%1 14.0 2.0 30.0 4.0 15.4 2.2 27.3 4.1 16.8 2.4 25.0 4.0 18.2 2.6 23.1 4.0 -12- 160272.doc
201229276 19.6 2.8 __21.4 4.1 21.0 3.0 —_20.0 3.9 表1令例如必要膜厚為14 nm之情形中，由濺鐘裝置j 之滅鍵速度（7.0 nm/秒），算出減鏟成膜時間τ為（14⑽"〇 nm/秒=)2.〇秒。使磁石支持台1〇成為以該2 〇秒旋轉一次 時’則 *P=(1/n)xT，旋轉週期P成為（（1/1)x2.〇=)2.〇 秒（30 rpm : 3 0轉/分）。 以該條件進行成膜後，由於以2〇秒之成膜時間，使磁 石支持台10確時地旋轉！次，故膜厚分佈成為4.1%。同 樣必要臈厚變化至15.4 nm〜21 nm，且相應依存必要膜 厚而變化之減鐘成膜時間T，控制旋轉速度S進行成膜後， 膜厚分佈成為3.9°/。〜4.1 %。 <比較例> 除未控制旋轉速度S(旋轉週期P)以外，以與實施例同樣 之方法進行成膜。旋轉速度設為60 rpm(旋轉週期p係i 秒）。表2顯示其結果。 [表2] 必要膜厚 in叫 成膜時間 _ [秒] 旋轉速度 from] 膜厚分佈 14.0 2.0 60.0 4.0 15.4 ^ 2.2 60.0 5.6 16.8 2.4 60.0 6.3 18.2 — 2.6 60.0 6.1 19.6 2.8 60.0 5,3 21.0 -----J 一 _ 3.0 60.0 3.9 由表2可知，必要膜厚為14.0 nm及21.0 nm之情形中，由 160272.doc • 13· 201229276 於濺鍍成膜時間T成為旋轉週期P(1秒）之整數倍，故膜厚 分佈良好(4.0%、3.9%)。另一方面’成膜時間不為旋轉週 期之整數倍之必要膜厚為2.2 nm、24 nm、26 nm之情形中，成為膜厚分佈惡化之結果（5.3。/。〜卜 例如，認為需要2.4秒成膜時間之必要膜厚為i68 nm之 情形中，從濺鍍成膜開始2.0秒後直至濺鍍結束之〇 4秒之 期間所成膜之膜係成為膜厚分佈惡化之要因。 圖4係相對濺鍍成膜時間τ(橫軸），對膜厚分佈（縱軸）作 圖的圖表。藉由參照圖4比較實施例與比較例時相對於 實施例之膜厚分佈係均—度高之結果，比較例之膜厚分佈 於成膜時間2.2秒〜2.8秒之範圍内均—度變低。認為此係起 因於相對於比較例所使用之濺鍍裝置之磁石之旋轉週期為 1秒，成膜時間並非成為旋轉週期（1秒）之整數倍者。尤其 可知隨著與為旋轉週期之整數倍的成膜時間2秒或3秒之差 變得更大’膜厚分佈惡化。 述之旋轉型，若為可 可採用搖動磁石構成 且’磁場形成裝置8並不限於如上 以一定週期變動磁場者亦可。例如， 體之搖動型磁控濺鍍裝置者。 又’構成磁場形成機構之磁石，亦可採用電磁石作為永 久、之代替。0該情形中，藉由使賤錢成膜時間τ成為 由電磁石形成之磁場之變動週期χ(Ηζ)之倒數（ι/χ)之整數 倍之方式’控制變動週期χ ’可謀求膜厚分佈之均一化。 而係配置於載物台或真空 又’電磁石不配置於陰極侧 配合週期而改善膜厚分 腔室側面之情形係亦可同樣地藉由 160272.doc 201229276 佈。 [產業上之利用可能性] 根據該發明，可謀求膜厚均一化，可抑制濺鍍時之電力 消耗，且可實現旋轉磁石之驅動機構之長壽命化。 【圖式簡單說明】 圖1係本發明之成膜裝置的概略剖面圖。 圖2係沿圖1之a-A線之永久磁石的平面圖。 圖3係顯示基板上之膜厚測定點的圖。 圖4係顯示濺鍍成膜時間與旋轉時間之關係的圖表。 【主要元件符號說明】 1 濺鍍裝置（成膜裝置） 2 真空腔室（腔室） 3 基板支持台 4 賤鑛陰極 5 處理室 6 絕緣環 7 乾材電極 8 磁場形成裝置 9 乾材 10 磁石支持台 11 永久磁石 12 旋轉軸 13 驅動機構 14 控制裝置 160272.doc 201229276 F 磁束 P 旋轉週期 S 旋轉速度 W 基板 160272.doc - 16201229276 19.6 2.8 __21.4 4.1 21.0 3.0 —_20.0 3.9 Table 1 For example, in the case where the required film thickness is 14 nm, the film-breaking time of the shovel is calculated from the key-breaking speed of the splashing device j (7.0 nm/sec). τ is (14(10)"〇nm/sec=) 2. leap seconds. When the magnet support table 1 is rotated once in the 2nd second, 'th*P=(1/n)xT, the rotation period P becomes ((1/1)x2.〇=) 2.〇 seconds (30 rpm: 30 rpm). After the film formation under this condition, the magnet support table 10 was rotated in a timely manner by the film formation time of 2 sec. The film thickness distribution was 4.1%. It is also necessary to change the thickness to 15.4 nm to 21 nm, and the film formation time T varies depending on the thickness of the film necessary. After the filming speed S is controlled, the film thickness distribution becomes 3.9 °/. ~4.1%. <Comparative Example> Film formation was carried out in the same manner as in the Example except that the rotational speed S (rotation period P) was not controlled. The rotation speed is set to 60 rpm (rotation period p is i seconds). Table 2 shows the results. [Table 2] The necessary film thickness is called film formation time _ [sec] Rotation speed from] Film thickness distribution 14.0 2.0 60.0 4.0 15.4 ^ 2.2 60.0 5.6 16.8 2.4 60.0 6.3 18.2 — 2.6 60.0 6.1 19.6 2.8 60.0 5,3 21.0 -- ---J _ 3.0 60.0 3.9 As can be seen from Table 2, in the case where the required film thickness is 14.0 nm and 21.0 nm, the sputtering film formation time T becomes the rotation period P (1 second) by 160272.doc • 13· 201229276. The integral thickness is good, so the film thickness distribution is good (4.0%, 3.9%). On the other hand, in the case where the film thickness is not necessarily an integral multiple of the rotation period, the film thickness is 2.2 nm, 24 nm, or 26 nm, which is a result of deterioration of the film thickness distribution (5.3. /. In the case where the film thickness required for the second film formation time is i68 nm, the film formed by the film from 2.0 seconds after the sputtering film formation to the 〇4 seconds after the completion of the sputtering becomes a factor of deterioration of the film thickness distribution. A graph plotted against the film thickness distribution (vertical axis) with respect to the sputtering film formation time τ (horizontal axis). The film thickness distribution system is compared with respect to the embodiment by comparing the examples and the comparative examples with reference to FIG. As a result, the film thickness of the comparative example was low in the range of 2.2 seconds to 2.8 seconds in the film formation time. It is considered that the rotation period of the magnet due to the sputtering apparatus used in the comparative example was 1 In seconds, the film formation time is not an integral multiple of the rotation period (1 second). In particular, it is understood that the film thickness distribution becomes larger as the difference between the film formation time of 2 seconds or 3 seconds which is an integral multiple of the rotation period becomes larger. Rotating type, if it is possible to use a rock magnet and magnetic The field forming device 8 is not limited to the above-described magnetic field fluctuations in a predetermined period. For example, the body of the rock type magnetron sputtering device. The magnet that constitutes the magnetic field forming mechanism may be replaced by a permanent magnet. In this case, by changing the film formation time τ to an integral multiple of the reciprocal (ι/χ) of the fluctuation period χ(Ηζ) of the magnetic field formed by the electromagnet, the variation period χ can be controlled to achieve a film thickness distribution. The uniformity is set on the stage or vacuum and the electromagnet is not disposed on the cathode side to improve the film thickness and the side of the chamber. The same can be done by 160272.doc 201229276. [Industrial use According to the present invention, the film thickness can be made uniform, the power consumption during sputtering can be suppressed, and the driving mechanism of the rotating magnet can be extended. [Fig. 1] Fig. 1 is a film formation of the present invention. Figure 2 is a plan view of the permanent magnet along the line aA of Figure 1. Figure 3 is a view showing the measurement points of the film thickness on the substrate. Figure 4 shows the time of sputtering film formation and the time of rotation. [Characteristics of main components] 1 Sputtering device (film forming device) 2 Vacuum chamber (chamber) 3 Substrate support table 4 Antimony cathode 5 Processing chamber 6 Insulation ring 7 Dry electrode 8 Magnetic field forming device 9 Dry material 10 Magnet support table 11 Permanent magnet 12 Rotary shaft 13 Drive mechanism 14 Control device 160272.doc 201229276 F Magnetic beam P Rotation period S Rotation speed W Substrate 160272.doc - 16