TW201229151A - Fluorine-containing composition for forming coating-type insulating film, insulating film, and thin-film transistor - Google Patents

Abstract

The present invention provides a composition for forming a coating-type insulating film with which an insulating film having excellent high heat resistance, transparency in the visible light region, a low dielectric constant and flexibility can be formed. The present invention is a fluorine-containing composition for forming a coating-type insulating film, which is characterized by comprising an organic silicon compound (A), and a fluorine-containing polymer (B) having the structural units represented by formula (L). (In the formula, X1 and X2 are the same or different, and are H or F; X3 is H, F, CH3 or CF3; X4 and X5 are the same or different, and are H, F or CF3; Rf is a fluorine-containing hydrocarbon group with 1-40 carbons optionally having an amide linkage or urea linkage, or is a fluorine-containing hydrocarbon group having an ether linkage with 2 to 100 carbons, and optionally having an amide linkage, a carbonate linkage, a urethane linkage or a urea linkage, wherein 1 to 3 locations of the terminal structure are substituted by Y (Y is a monovalent organic group containing at least one hydrolyzable metal alkoxide region with 1 to 50 carbons on the terminal, or a monovalent organic group with 2 to 10 carbons having an ethylenic carbon-carbon double bond on the terminal); a is an integer from 0 to 3; b and c are the same or different, and are 0 or 1.)

Description

[Technical Field] The present invention relates to a fluorine-containing composition for forming a coating-type insulating film, an insulating film, and a thin film transistor. [Prior Art] Nowadays, thin film transistors (TFTs) used in large liquid crystal display devices and the like are mainly in inverted coplanar type, but in this TFT, the insulating layer between the gate and the channel is TEOS or silicon nitride (SiN) is formed by CVD (Chemical Vapor Deposition) or occupational plating. However, due to the large screen size of the display device or the fierce price competition, it is required to have a large area and a low price. Therefore, an insulating layer of a thin film transistor has been tried by a coating type film forming method. The coating type insulating film forming composition is, for example, a polyoxyalkylene. For example, Patent Document 1 discloses a polyoxyalkylene composition containing a polysiloxane having a specific repeating unit as a polyoxyalkylene composition for forming a highly flexible insulating film and generating an acid by heating. And a compound of at least one of free radicals. Patent Document 2 describes a curable fluorine-containing polymer for forming an antireflection film, for example, a specific structure in which one to three monovalent organic groups having a carbon number of 2 to 10 having an ethylenic carbon-carbon double bond are bonded to a terminal. Hardening fluoropolymer. In addition, in the case of the patent document 3, the material which maintains the anti-glare property, and the "whitening" by the surface scattering is not found, and the adhesiveness is excellent and the practical low-reflection is used. The specific structural unit having a functional group having at least one hydrolyzable metal alkoxide moiety having 1 to 50 carbon atoms at the terminal and the terminal having 1 to 3 carbon atoms having an ethylenic carbon-carbon double bond bonded to the terminal are 2 to 10 A hardenable fluoropolymer having a specific structure of a monovalent organic group. [PRIOR ART DOCUMENT] [Patent Document 1] [Patent Document 1] Japanese Patent Publication No. 9 - 1 8 8 8 1 4 (Patent Document 2) International Publication No. 2 / 1 8 4 5 No. 7 (Patent Document 3) International [Invention Summary] [Problem to be Solved by the Invention] However, as disclosed in Patent Document 1, the insulating film formed of polyoxyalkylene still lacks flexibility and is sometimes caused by bending. Since it is cracked, it is required to form a material which is more flexible and more excellent. Further, in order to form a gate insulating film of a thin film transistor, it is required to have more excellent high heat resistance, transparency in a visible light region, and low dielectric constant. In view of the above-mentioned circumstances, the present invention provides a coating-type insulating film-forming composition which can form an insulating film having high heat resistance, transparency in a visible light region, and low dielectric constant and flexibility. [Means for Solving the Problem] -6 - 201229151 When the inventors of the present invention carefully review the composition for forming a coating-type insulating film, it is found that the organic bismuth compound is formed by using a composition in which a specific fluororesin is used as a binder. A coating-type insulating film excellent in heat resistance, transparency in a visible light region, low dielectric constant, and flexibility. In other words, the present invention is a fluorine-containing composition for forming a coating type insulating film, which is characterized by comprising: an organic cerium compound (A), and having the following formula (1): [Chemical Formula 1] - f CX^2 - cx3 ^- ^ (L) CC X4 X 5 , 1-( C =*〇) b( —R f (where X1 and X2 are the same or different, H or F; X3 is H, F, CH3 or CF3; X4 and X5 are the same or different and are H, F or CF3; Rf is a fluorine-containing hydrocarbon group which may have a carbon number of a guanamine bond or a urea bond, or may have a guanamine bond, a carbonate bond, an amine group The ester terminal or the urea bond has a carbon number of 2 to 1 〇〇. The terminal end of the structural group of the fluorine-containing hydrocarbon group having an ether bond is γ (the terminal of the lanthanoid system contains at least one hydrolyzable metal alkane having 1 to 50 carbon atoms) a fluorine-containing hydrocarbon group substituted with a monovalent organic group at the oxide site or a monovalent organic group having a carbon number of 2 to 10 at the terminal having an ethylenic carbon-carbon double bond; a is an integer of 〇~3; b and c are the same Or a fluoropolymer (B) which is a structural unit represented by hydrazine or 1). The organic hydrazine compound (A) is preferably the following formula (1): {Si(Ra)s(Rb)t (Rc)u(Rd)v(Re)w}n ( 1 ) (wherein, Rb, R, and Rd are the same or different, and are hydrogen or halogen , alkoxy group having a carbon number of 1 to 10, an amine hydrazine having a carbon number of 1 蕋, an alkyl group having a carbon number of 1 to 10, 201229151, an aryl group having a carbon number of 6 to 10, an allyl group having a carbon number of 3 to 10, or The glycidyl group having a carbon number of 3 to 1 。. The Re is the same or different and is _〇-, .1^., _ C = C-, or a decane bond. The s, t, u, and v are the same or different. , 〇 or j ' W 〇 4 4 4 。 。 。 η η η η η η η η η η η η η η η η η η η η η η η η η η η η η η η η η η η η η η η u + v are the same or different, 〇~4, w are the same or different, when 0~4 'w is an integer of 1 or more, at least 2 Si systems are connected by Re to form a straight chain, ladder type, The compound (A 1 ) represented by a cyclic or heterocyclic ring. The organic ruthenium compound (A) is preferably a tetraalkoxy decane. The fluorine-containing composition for forming a coating-type insulating film of the present invention, wherein The organic ruthenium compound (A) is preferably 50% by mass or more, based on the total mass of the ruthenium compound (A) and the fluoropolymer (B). The fluorine-containing composition for forming a coating-type insulating film of the present invention is preferably The organic solvent is contained. The fluorine-containing composition for forming a coating type insulating film of the present invention is more The insulating film of the present invention is formed of the fluorine-containing composition for forming a coating-type insulating film. The thin film transistor of the present invention is characterized by a sequential layer. In the semiconductor layer, the insulating film, and the gate electrode layer, the fluorine-containing composition for forming a coating-type insulating film of the present invention has the above-described configuration, so that high heat resistance and transparency in a visible light region can be formed. Low-8 - 201229151 Coating type insulating film with excellent dielectric constant and flexibility. The insulating film of the present invention is formed of the fluorine-containing composition for forming a coating-type insulating film, and is therefore excellent in heat resistance, transparency, and flexibility. Since the thin film electro-crystal system of the present invention is composed of the above-mentioned insulating film, it is excellent in heat resistance, transparency, low dielectric constant, and flexibility. [Mode for Carrying Out the Invention] The fluorine-containing composition for forming a coating-type insulating film of the present invention is composed of an organic ruthenium compound (A). The organic ruthenium compound (A) has a carbon ruthenium bond. The above organic hydrazine compound (A) is preferably a liquid at normal temperature (e.g., 25 ° C). The above organoindole compound (A) is, for example, a Si-H compound having a Si-H bond; an Si-N having a Si-N bond such as an aminodecane compound, a guanamine, a mercaptoacetamide or a mercapto imidazole. a compound; a monoalkoxy decane, a dialkoxy decane, a trialkoxy decane, a tetraalkoxy decane, a decane, a carbaryl, a stanol or the like having a Si-Ο bond: a single a halogenated decane, a Si-(C)4 compound such as a Si-Cl compound having a Si-Cl bond such as chlorodecane, dichlorodecane, trichlorodecane or tetrachloromethane; a Si-Si compound having a Si-Si bond, Vinyl decane, allyl decane, ethynyl decane, and the like. In other words, the organic ruthenium compound (A) is preferably selected from the group consisting of a Si-H compound, a Si-N compound, a Si-tellurium compound, a halodecane, a Si-(C)4 compound, a Si-Si compound, a vinyl decane, an alkene. At least one compound of a group consisting of propyl decane and ethynyl decane. More preferably, the above organic ruthenium compound is a compound having at least one atom selected from the group consisting of hydrogen, oxygen and halogen, -9-201229151. Specific examples of the above compounds are listed below. [Si-H compound] -10- 201229151 [Chemical 2] 'SiH(CH3)2 CH3CH3 I I; 3 CH3—C—Si-H CH^CH, aSiH(CH3)2 c CH3 CH3-CH. Cl

X CH3-OH Ή in3 ch3 Cl—SHH l GH3 CH3 ch3 CH3—C_SiH^'C_CH3 J I 2 I 3 ch3 ch3 ΟΗ3〇Η2—Sh-H Cl OCH2CH3 OCHjCH^ CH3CH2SiH2CH2CH3 post jc丨

SiH(CH3)2 {CH^SilH-Si-SsH(CH3)2 SiH(GH3)2 .GH2CH3

, ch2ch3 GHa^r, F3

-11 - 201229151 [化3] (CH2)3CH3

C H3 (C H2)3—Si—H HSiCI3

-Si-H (CH2)3CH3 CH2CH3 CH3CH2-Si-H CH2CH3 〇ch2ch3 CHaGH20-SiH 0C H2C H3 (CH2)5CH3 CH3(CH2)5-Abu H(CH2)5CH3 OCH, t CH3(>-SiH OCH3

Or

CH(CH3)2 (CH3)2CH-Si-H CH(CH3)2

Si(CH3)3 (CHaJsSi-SiH

Si(CH3)3 [Si-N compound] [Chemical 4] rv ch3 CH2NI+-SH3H3 CHj \ CH3CH3 C H3-N-Si^CHpCH^-CH3CH3-Sh-A-ch3 ch3 iHs F\ FW ?Hv a ch3 ch3 IJ p_^ Bu N' CH3—Si-N ^/=( CH3V -ch3 ch3 ^ch2ch3 , ch2ch3

. "3,? H CH^ I , CK3 CHa Q , 〇h3 GHa — Si—N ihU, gh3 -12- 201229151 [Chemical 5] CH3 ch3 CfCH2-SHNH-SHCH2CI ch3 ch3 ch3 ch3 Si—NH—Si CH3 Ch% CH3 CH3 CHa λ —Si-NH-Si-^ CHg CN3 ch3

CH3 CH3 GH3—SHN K-SKCHg ch3 ch3 CH, CH, factory CH3i ch3 ch3 ch3 I I CF3CH2CH2-Si-NH-fi-CH2CH2CF3 ch3 ch:3

Ch3 gh3 ch3 ch„ aCHH-ch3H〇h3 CH3CH3GH3 CH3^Skr$kCH3 CH, ch3 n-srCH^CH3—Si—N—s*r—CH3 CH3—sf , NH chJ\ CH3 ηΛ .srCHa Cri3 ch3 ch3 - Si-N-CHaf!la CH3

Cl CHf GHa—Sh-M-Si—CH3 CHa—Si—N—Si—CH3 ^^StH-NH-SiH: CH3, gh3 ch3-

CH3 CH3 CH3 -Si-NH-Si-CH3 + CH3nSi^QI ch3 ch3 ch3 ch3 ch=ch2 ;SL ΝΠ 〇H3 CH2=CH^SisN^Si''CH=CH2 201229151 [Chemical 6] CH3—Sh ch.- γ"* OH3 Sh-CH, CH, CH3 0-SHCH3 ch3 O CK3CH3

H3 〇 ch3 ch3 GF3-C-N-Si-C-CH3 CH3CH3CH3 ch3 CHg-^C^-N-SHCHg -CFjtCF^CFg —C—i|J·—Sr-CHa CH3^Si~·Ν·~ CN3 CH,

CH 3 .OHsCH3 OHsCHsv O-SiH^ , SiH-N=C[ VC; H2CH3 CH3CH/

Fa GH3—Si - CH3 II ch3 ch^^o- CKs CHa—SHCH-j1 η3 ch3#*^o—s 卜 ch3 CH3 shch3 ch3

CH3 /, I CH3, O-S1-CH3 JJ CF/^O-Si-CHi CH3 I -Si-i 1 CH, CH3 I. CH, a Si-CH-!

CH 3

CR ch3 1. CH3—Si—CH3

CH; 3 CH3 I. 0—Si—CH3 I 3 CH, gh3 CH^—0 Bu CH3 CH, CH3’ 〇—SMDHa heart 3 ch3 CH3—C—NhhSi—CH5 ch3

U -14 - 201229151 [Chem.7] CH, ώ3 ch3 t I ύ ch3 ch3

CH3—Sh-CH3 ch3

CHf Si—CH ch3

CH^~Sh~ΌΗ3 ch3 , gh3, η3 C H3—Si—CHgCHgC H3 ch3 -15- 201229151 [化8] ?h3 ch3 CH3—Si—N=C=N-Si—CH3 ch3 ch3 0H3 O OHa CH5— Sr^NH^C^NH^sHCNa 6Ha CHa

^n3

Called 〇, .人,_3 Si(CH3)3 CH3 ch3 ch3 CH3—Si—N—0—Si—CH3 CH, CH-,

NCS SCN-s|—NGS Acs CH3 ch3

I I CH3—Si-NH-0 -Si-CH3 CH3 ch3

I-

CFjSOj-Si(CH3)3-N-SO2CF3 ch3 CH3—Si*—NCO CH3 ch3 CH3*—SF—C 0 CH3 si—ch3 OSKCH^s (CH^SK [Si-0 compound-16- 201229151 [Chemical 9 ]

?h3 CH 2=C HC H2—O-Sf—DH3 ch3

0Si(CH3)3 CH3CH3 (CH3-' _ OC(CH3)3 CH3CH3 DSi(CH3)3 \ OSi(CH3)3 (CH3)3SiCT, OSi(CH3)3 CH3 ch3 CH3'—C:—Si, I 10 CH3 ch3j I ϋ CHf%~Γ^Ό02Η / 0CH3 0CH3 CH,

-NH

-17- 201229151 CH3 GH3CH20-Sf—CH=CH2 G ch3 c CH; H3 OCH3 ?H3 Ii-CHg ch2ch3 CH3CH2—Si-OCH2CH3 CH, CH^ ch3 ch3 CHi CH3—Si—0(CH2) 2〇Si—CH3 CH3—Si—S(CH 2 ) 2 S—Si—CH.

CH 3 CH, ch3 I CH, CH3 CH3 CH: CH/^C-O-Si—CH3 CH3〇-Si—CH3 〇H3 * CH3〇H^—1 och3 ch3 'Sl·—CHa ch3

C(CHg)3 〇Si(CH3)3 ch2=c-ch=ch-och3

Ch3 Si-och2ch3 gh3

Ch3 S—Si-CH3 CH3 ch3 O-SHCH, CH3 f £Η2〇^έΗί!Βυ CH?"iPh Ph

HO

〇e«[C{CH3)2]3 -18- 201229151 [Chemistry 11] CH3 〇Si(CH3)3 CH&CHa

CH3CH20-Sh-CH^ CH2_CH_(l=CH2 GH^SpO^C=GH-C^OCH CH3 CH, ^^0-A-CH3CJ CH3

CHa Γ II O—Sh-CHa Bu. H3 ch3 ina ch3o ch3 CH2=C—C"OCH2CH2〇-Si-CH3 CH3

(CH3)3SiO CH-,-C=CH-C-CH, CH3 IJ CH2=CH—0—Si—CHj CH3 (CH^SK) < (ch^sk/ C=CH-OSi(CH353 -19- 201229151 [Chemical 12] C5CH3 och2ch3 och3 H2NCH2CH2NH(CH2)iS!—ΌΗ3 CH3—Si—(CH2)3NH2 dCH2CH2CHr-Si-CH3 OCH3 1 1 OCH2CH3 OCH-»

〇ch3 •SHCH3 och3

Ok^CHis^Η3 CH3OH2O-si-OCH2CH3

?h3 CH.gO-'Si'-OCHg CH,

OOHzCHa H2〇(CH2)3-'Si-CH^ OCHzCHa OCH2CH3 CH3—SHCH=GH2 OCH2CH3 OCH2CH3 〇aH2CH3

Si - CH3 CH3—Si-H OCH2CH3 OCH2CH3

,.〇ch3

《卜CH3 CH3—〒hH ^===/ 〇CH3 00 H3 och3 CH3-Si—CH—CHj 0CH3 0CH3 CH20(CH2) Factory p-CH3 V 〇CH3 OCHg, CHi-Si-(〇H2)aSH OCHx - 20- 201229151 OCH2CH3 CH3CH2〇-Si-CH2CH-CH2 och2ch3 och3 CH3O-Si_CH2CH-CHj OCH^ OCH2CH3 H2NCH2CH2CH2—Si-OCH3 H2NCH2CH2NH(CH2)3—fi-OCH2CH3 OCH2CH3 och2ch3 H2N—(C H2)^SHOCH2CH3 Och2ch3 OCH, H2NCH2C; H2MH(CH2)3-S 卜og3 OCH„ OCH3

-Si-OC OCH3

Och2ch3 CH2-Si-OCH2CH3 OCH2CH3 OCH3 OCH3 CH30-Si-CH2CH2-Si-OCH3 OCH3 OCH3 OCH3 I BrCH2CH2CH2—Si-OCH3 OCH3

Si(OCH2CH3)3

OCH 3 OCH1 CH30-〒一(CH2)3NH(CH2)3-Si-〇CH3 OCH3 OCH3 OCH2CH3 CICH2—Si—OCH2CH:3 OCH2CH3 OCH2CH3 CHaCH20-Si—CH2CH2CH2CI qch2ch3

〇ch2ch3 och3 GH3{CH2>ir^i-OCH2GH3 CH/CHAr^i-OCh 〇CH2CH3 OCH3

OCH3 CH2〇H2-4 Bu OCHs icH3 0CH3 CH3CH Factory Si—〇CH3 OCH^

S -21 - 201229151 [化 14] och3 CH2〇(CH2)3—Si—OCH3 OCH^ och2ch3 CH3(CH2)5—Si—OCH2CH3 OCH2CH3

OCH3 OCH2CH3 0CK3 Bu OCH3 HS(CH2) Plant f-〇CH2CH3 CH3C>-Si-(CH2)3SH OCH3 OCH2CH3 OCH3 OCH3 OCH2CH3 CH3iCH2>ir-SHOCH2CH3 CH3{CH2)1r-SHOCH3 GH3(CH2)r-Si"OCH2CHa &lt ;->CH2CH3 〇CH3 OCH2CH3 OOH2CH3 OCHzCH» and -OCH2pHb CH3GH2-ii-OCH2CHa OOH2CH3 l-- - OCHgCHj CH, ΌΗ3 GH3,

〇ch2ch3 ch^-shoch2ch3 OCH2CH3 OCH2CH3·CH3CH20-SiH OCH2CH3 OCHgCHa och2 CH, CH3CH2〇-Si—CH^CHgCH^r-NCO cH2=CC-〇(CH2)3-SI—OCH2CH3 0〇Η2〇Η3 OCH2CH3 Si— OCH2< OCH2CH3 CH. 3 0CH2CH3 OCH2CH3 -Si—CH=( OCH2CH3 CF3(CF2)&CH2CH2-Sp-〇CH2GH3 CH3CH2〇-Si-CH=CH2 GHaSKOCH

CCH3 NH(CH^3—Si~OOH3 OCH3

〇〇H3 〇CH3

Si-OCH, & CH3(GH2)2—SHOCH2 UCHg -22- 201229151 [Chem. 15]

CH ,~~, 0<,~Οτϊ 9〇η3 och3 OCH, OCHa CH^O-SiH CH 001⁄2 Ί3

pCHa 〇CH3 CH3〇-SHCH2CH2CH2CI OCHa i? OCH3 I CH2=C-C-0(CH2)3-Si-OCH3 CH3 OCHi

c CH 〉0: och3 I J CF3CH2CH2—SI-0CH3 0CH3 CH3 Ha Cl·

(cW, 05 which?

□CH 3 CH30-Si(CH2)3NH(CH 仓 NHC H2〇

Ch=ch2 HCI OCH3 IJ GH2=CH-S 卜Ha OCH3 OCH2CH2OCH3 GHaOC HaPUgCnAi—CH=CH2 ΟΟΗ2〇Η2ΟΟΗ3 -23 201229151 [Chemical] 0(CH2)3CH3 CH3(CH2)^0-SiTM0(CH2)3CH3 0(GH2)3CH3 OC H2C H3 CHaCHaO-Sr-OC HSC H3 OCH2CH3 OCH(CH3)2 (CH3)2CHO-Si-OCH(CH3)2 OCH(CH3)2 〇CH(CF3)2 (CF3)2CHO-Si -OCH(CF3)2 OCH(CF3)2 OCKa GH3Osl-OCH3 OCKa OCH2CH2CH3 ch3gh2gh2o^ Bu och2ch2ch3 ΟΟΗ2〇Η2〇Η3 -24- 201229151 CH3 GHg i^Si—0**Si—^ [Chem. 17] 〇Si(CH3 )3 (CH3)3SiO-Si-CH2CH=CH2 OSi(CH3)3 CHa CH3

CiCH2—SBu O—S 卜 CH2GI CHj. CH3 H2N{CH2)3-Si-〇-Sp(CH2)3NH2 CH^ GHg, CH3 ch3

I I HO(CH2)4-Si-0-Si-(CH2)4OH CH3 ch3

Ha CH3 CH3 GH3 CH3 CHa~SH0~Si-C>-Si-0--Si~CH3 CH3 CH^ ch3 ch3 b)2 GH{CH3)2 〇h3 ch3 ch3 {CH3)2HC GH{CH3)2 ch3 ch3

Cl - Si ~ 〇 - points Cl ch3 ch3

a-sj—osj—O-sj—Cl Cl·-SHO-SHCI CI—ShO-Si-OI ch3 ch3 ch3 (C^2HC 1 ...--.

Ch3 ch3 f OSiH(OH3)2 "Hi-OSiH(CH3)2 OSiH(CH3)2

CHi 〇Si(CH3)3 〇CH3-Si-(CH2)3OCH2^J 〇Si(CH3)3 CH3 ch3 ch3 III CH->-Si-0 ——SiH-0-Si-CH-i CH, -25- 201229151 [化18] CH3 ch3 3 CH3—Si—O^Si—CH3 CH3 ch3

H^iC, /OH. :^Oc όό CH 疒 Sj 3, >SirCH3 β\—〇 X〇H3 1 CN3

Ch3 ch3 ch3 C l·%—ShO-SHD-Sh-CH) (^H3 ihlg ^3 〇SiH(CH3)2

I OH pLI (CH3) 2HSi〇-Si-OSiH(CH3)2 3>iH-〇-SiHC: 3 OSiH(CH3)2 CHa CH3

-26- 201229151 [Chem. 19] (CH3)3SiO. Ο Ο 〇Si(CH3)3 CH,

CH3CH3 CF^sor-si-c-ch3 ch3ch3

0 ?H2CH3 o CH(CH3)2 0 CHa CFj-S_0-Si-CH: 3 CF3-S-0-Si-CH(CH3)2 GHg*G*^^Sr^CH^j. CH2CH3 0 ch(ch3 ) 2 ch3 1 F3 ^ Η3ΪΗ3 CISIC I o

OMSMO

N3 3C 3 H h H CISIC

o=IJ 3 h3) 3

Lor 3SI

3 h3) (CH 27- 201229151 [Chem. 20] CH3V ch3〆 CH^Ha, H-SHOH CH2CH3

CH2CH3 GHsCH^Sh-OH CH2CH3 CHa ch3—+ Bu onh2 vH.3 [Halodecane] Si-Cl Compound:

-28- 201229151 [Chem. 21] ch3 CHg^CHCHg—SHCI CH3 W CH3 9H3 ch3 ch3 i^-GI Cl—Si—CH2CH2-Si—Cl CH, CH, ch3 GHSi—CH2Br CH〇

H3c H3C_C—0—Si—Cl h3c

〒h3 0Η3(0Η^3-8Η0Ι CH3

CH3 CH3 Η^γ I CH3-G——SHCI H3C-C-Si-Cl II I I gh3 ch3 h3c 1 CH,

CHa

Ch3 0H3-CH GH3—CH’iH3 , 01 \

CK3 H2GH2CH2-Sr-CI CHI, CH, CK3 GH3CH2CH2-Si-CI ch3 ch3 Cl-SMH l CH3 CH3CH3 ch3, i j I j ^CH-C—Si—Cl CH〆 I I CH^CHo

CH 3

Gl—S|·—CH:=CH2 ch3 CH2CH3 I CH3CH2—Si—Cl CH, CH〇 ch3 t GK^-Si-CI ch3 ch3 GIGH2-Si-GliH3 ch3 NC-C h2ch2c SHCI ch3

Ch3 CH; CH3 ch3 Ch-Sl—OSi—OSi—Ci {CH3)2HC CH(CH3)2 Gh-ShO-SHCI ch3 ch3 ch3 (CH3)2HC CH{CH3)2 ch3 ch3 Cl—Si—Si—Cl ii Ch3 ch3 -29- 201229151 [化22] Ο

c ch2ch3 ch3 ^H-Si-CI Cl-Si^CHaCHa 3 ch2ch3 ch3 CHa ^ V-shci 0H3 CH3 CH3(CH2h CH3 γ-to HOI CH, CH3(CH2)

Ch(ch3)2 (CH3)2〇H—Si—Cl CH(CH3)2

-30- 201229151 [Chem. 23] C Hgf—Si^C H^5I Cl

Gl CH3*—Si—(C H2)^CI Cl H3p Cl CH5

Ϊ l· JL H3C—C—Si—C~~CHa III H3C Cl CHg

Cl CH3(CH2)9-Si-CH3 Cl

Cl ^&gt; Cl ch3(gh soil-〒卜CH3< V-Si-CHg Cl '^ Cl

Gl H2CH3

Cl

Cl GH3{CH2)5-Si-(CH^aCH^ Cl

?' ψ CH3-S1-CH3 CH3 (CH Shanyishan CH3 C1 Cl

Cl Cl ci CH/CHdn-i-CHs CH3CH2—SHH CH3(CH2)5-y-CH3

Cl Cl Cl

Cl Cl

I I OH3—Si*-Si^OH3

II Cl CI -31 - 201229151 [Chem. 24]

Cl Cl Cl

Cl

Cl —Si—CH2CH=CH2 CI3Si—CsC—SiCI3 cHSh—CH^H^-Si—01 CH3(CH2)r-St-CI Cl Cl CICHaCHjCH^

Cl ^HCI

SiCI3

Cl CH3(CH2)^Si-CI CH3(CH2)1f-Si-CI Cl Cl

Cl Cl -ch2ch3

Cl Cl CH3 Cl γ1

G 卜sl-s!—Gl CHf ihl—CHrA Bu Cl CH.3{Ghy Hirose HCI

Cl Cl Cl Cl

SiO (3

Cl ch3 I I 3 ,ch3 01—Si—C—〇K , I I , ch3 Cl ch3

Cl

I NCCH2CH2—Sh-CI Cl

Cl CF3(CF2)7CH2CH2-Si-CI Cl

Cl I a-s Bu (ch2}5ch3

Cl I CH^—Si—Cl Cl

Cl Cl I t CHa{CH2)17^Si-CI Ch-Si—CH^HzOHs Cl Cl HSiCI3

Cl

Cl CH3(CH2)13-Si-CI OF3(CF2)5CH2CH2-Si-CI CJ Cl GH2=CH—SiCI3

Halogenated decane other than SiCl4Si-CI compound: -32- 201229151 [Chem. 25]

[Si-(C)4 compound] -33- 201229151 [Chem. 26] CH2-CHCH2-Si-CH2CI (CHjJjCH-Si-CH2CH-CH2

I CH3 ch3

I CH3-S1—CH2CH—CH2 ch3 CH(CH3)2 〇H(CH3)2 CH3OCH2 CHa CH2- έΗ3

Ch3 CH, C=C-Si(CH3)3

CH 3 CH〇 CH3_Si~C=C——C=C——Si — CH3

C=C-Si(CH3)3 俨3 CH3 NH2 CH3 CHa Br CH3—Sh-CH2'~Sh-CHg OH3—Si—CH—S1-CH3 CH3— ch3 ch3 ch3 CH3 &amp; -34- 2 201229151 27] 俨3 BrCH2CH2—Si—CH3 ch3 CK3 -Si—Ch

Day r

CHa-Sp-CHgBr gh3

Si(CH3)3 ch3 CHrS-G=CH2 CH3

Si(CH3)3 CH^

CH 丨3 CH3—Si—ch2ch2och2ci Or shch2ci CH^ ch3 GH3 cich2—shch3 ch3 C H2CH—C Hg gh3—shch3 ch2ch=ch2

(CH3)3sr S, Si(CH3)3 ch3〇 OS02CF3

OCH3

Si(CH3)3

Ch3

Ol?h

Si-0H=CH2 ch3 CH^ I i? CH3—S'r-CsC-CH-C-〇CH2CH3 CH3—Si—CH2-C-OCH2CH3 CH, 35 201229151 [Chem. 28]

CH3 gh3—sh—gh2i ch3 CH3 OS02CF3 c;^och3 OS02CF3Jx.Si(OH3)3 V OCH3

CHS I. CsC^Si^CHa I ch3

Ch3 〇 ——f—OS〇2CF3JL^Si{CH3)3 u

ONa CHg, 〇 -36- 201229151 [Chem. 29] GHa, ch3 ch3〆 〇H3 ch3 CH3 a Si— C= C- (CH2)3CH3 _Sn— CH3 (CH2)3CH3

CH3_ Si- CH2 — Sn — (C H2)3 C H3 ch3 (ch2)3ch3 CH2CH3

CH3CH2—Si—C=CH ch2ch3 CH(CH3)2 (CH3)2CH-Si—C=Cl· CH(CH3)2 ch3 0

I. II CH3_Si—CH2—C—OH CH3 CH2CH3 CH3CH2—Si—CH-CH2 ch2ch3 CH(CH3)2—Si—C=C—CH CH(CH3)2 ch3 I J CF3—Si—CH3 CH—,

CHa CH3—Si—CSCH CH3—Si-Cs〇-CH-CH3 CHa 〇H3 GH3 CH3—Sh-c in,

CH3 CH3*-Sh-GHN2 ch3 H3 t-CHaiH3 CH3 CH3—S'r-OH2CH2OH ch3

Cl' CH, ICH, -37- 201229151 [Chem. 30]

CH3 I. CH3-Si-CH2CH2ONH2 CH3 • HCI

,_&gt; 1 CH3 / P-OH2CH2-Si-CH丨 CH

3 CH3 I. CH3 —Si_C=C-CHi -I—BF^

'N

Csc—Sr—OH3 ch3 CH, CH3 5? ch3 CH^Si-CH2SH CH3-Si-CH2OH Gh3— g - 〇〇Η2—^CH3 cn3 CH3 ch3 ch3 ch3 CH3—Si—CH2N3 CH3—Si—CH2MgCI CH3 〇Ha

0 II

CH 3 CF3 - S - OCHj - Si - CH〇 3 II 2 I 3 0 CH3

Si(CH3)3

OSO2CF3

OSO2CF3 CH3 Si(CH3)3 ((?H33)3sr 'Ch3

B(OH)2

OSO2CF3

-Si(CH3)3 CH3 C —CsCi~SHCH^. cha

Si(CH3)3 ch3 CH Factory i Bu GsG"CH2〇H CHa

\=J I ch3 1 CH,C=C-Si-CH3 CH3 Br_ a ch3 子卜ch3 ch3 -38 201229151 [化31]

〇η3 Si-CHa CH3

[Si-Si compound] -39- 201229151 [Chem. 32] CH3 CH3 Ci-He I CH3 CHa

Cl Cl α -sl-s!—ci 1 1 Cl Cl CH3CH3 GH^—Si—Si—CH3 CHr>CH^

SiH{CH3)2 Si(CH3)3

SKCHa)» {CH^gSi—SiH Si(CH3)3 [vinyl decane, allyl decane, and ethynyl decane] -40- 201229151 [Chemical 33] ch3 CH^-S1-G=CH2 CH3 CHa Br CH , ch3 ch3ch2 ^r-Si-NH-Si-^ CHa CH3 CH3 ch3 ch3 och3 ch3 GH production GH-〒卜予卜 GH-GH2 GH each-▲ Bu GH3 ch3 ch3 ch3 〇Si(CH3)3 CH,=C —CH=CH-〇CH,

〇Si(CH3)3

Si-CH=CH2 CH2=CH—C=CH2 ch3 0 0CH3 II I CH2=C-C-0(CH2)3-Si—0CH3 ch3 och3 ch3

I CH2=CHCH plant Si-ch2ci ch3 CHa CH2=CHGH2—SHCI ch3 GH2=GHCH2*—〇—SS—CH3 CHa

Cl

Cl—Si—ch2ch=ch2 Cl 0CH3

I CH3〇-Si-CH2CH=CH2 0CH-, 〇Si(CH3)3 (CH3)3SiO-Si-OH2CH=CH2 0si(CH3)3 OCH2CH3 CH3CH2O-Si-CH2CH-CH2 OCH2CH3 CH3

I CH3-Si-CH2CH-CH2 ch3 CHS]·~CH^CHj I 2 gh3 -41 - 201229151 [Chem. 34] CH2CH!=CH2 OH3—Sr-CH3 cn2ch=ch2

Cl CH2=CHCH2-Si-CH2CH=CH2 OCN2CH3 CH3—St-CH=CH2 OCH2CH3 CHa C H 3GH2 S G CH 2 03⁄4

CH

H3 CH2=CH—SiCI3 OCH2OH3 ΟΗ3ΟΗ2〇~3ϊ—CH=CH2 OCH2CH3 ch2ch3 CH3CH2_Si—CH—CH2 OH2CH3

〇CH3 GHgp^GH'~~OCHg OCH3 〇h3 CHiPChf-Sh-CHa ch3 och2ch2och3 CHaOCHgCH^O-Si-CH=CH2 OCH2GH2OCH3 -42- 201229151 [Chemical 35] CH3 ch3 II CH3—Si—C=C—Si~ CH3 3 II 3 ch3 ch3 ch3 ch3 II CH3-Si-C=C-C=C-Si-CHi 3 II 3 CH^ CH〇

Ch3 CH3-Sj—C5C-CH2Br ch3 CH, -Si—esc—ch-c-och2ch3 03⁄4 ?HSihs

CH 3 (CH2)3CH3 CH2CH3

c h3~~ S i- C=C— S n—(C H2)3 C H3 CH3CH2—Si—C=CH ch3 (CH2)3CH3 I CH,CH〇CH(CH3)2 (CH3)2CH—Si_C= CH CH(CH3)2 ch3 oh I . I CH3—Si-C=C—CH_CH3 ch3 〇H(CH3)2 (CH3)2〇H—Sj—C=C—CH3 CH(CH3)2 ch3 03⁄4 CH^ ~Sr~C=CH CH3 chMi_csc- Bu liver 4 ch3—(10)4!^

CH 3

Cl·%

A 3 H3I-CH3 CISIC C-Br· III c „2 CH3

CHg—SfT-fC^C^GH2〇H ch3 The above organic ruthenium compound (a) is more preferably represented by the following formula (1): {Si(Ra)s(Rb)t(Rc)u(Rd)v(Re) w}n (1) (wherein, Ra, Rb, R, and Rd are the same or different, and are hydrogen, halogen, -43-201229151 carbon number 1 to ί alkoxy group, carbon number 1 to 10 amine a base having a carbon number of 1 to 10, an aryl group having a carbon number of 6 to 10, an allyl group having a carbon number of 3 to 10, or a glycidyl group having a carbon number of 3 to ,, the Re being the same or different, -0-, -NH·, _ C = C-, or a decane bond. s, t, u, and v are the same or different, and are an integer of 〇 or 1 'w 〇 4 4, and n is 1 to 20. When η is 1, s + t + u + ν is 4, w is 〇. When η is 2 to 20, s + t + u + v are the same or different, which is 〇~4, w is the same or different When it is 〇~4 and w is an integer of 1 or more, at least two Si systems are represented by a compound (A1) in which Re is bonded to a linear, ladder, cyclic or heterocyclic ring. Ra, Rb, Re, and Rd are bonded to Si! Price group. Re is a divalent group bonded to two Si groups. In the formula (1), 'Ra, Rb, R. And Rd are the same or different, at least one of hydrogen, halogen, alkoxy group having a carbon number of 1 to 10, or an aryl group having a carbon number of 1 to 1 Å, and other alkyl groups having a carbon number of 1 to 10, and a carbon number of 6 to An aryl group of 10, an allyl group having 3 to 10 carbon atoms, or a glycidyl group having 3 to 10 carbon atoms is preferred. When η is 2 to 20, s + t + u + v is the same or different from 1 to 3, and w is preferably 1 to 3. In the formula (1), Ra, Rb, Rc and Rd are more preferably the same or different, at least one of which is an alkoxy group having 1 to 6 carbon atoms or an aryl group having 1 to 6 carbon atoms, and the others are carbon numbers 1 to 6 An alkyl group or an aryl group having 6 to 8 carbon atoms. More preferably, at least one alkoxy group having a carbon number of 1 to 6 'others are an alkyl group having 1 to 6 carbon atoms and an aryl group having 6 to 8 carbon atoms, in other words, the compound (A1) is an alkoxydecane. Particularly preferred are the same or different, all of which are alkoxy groups having 1 to 4 carbon atoms. In the above-mentioned Ra, Rb, Re and Rd, in the case of an alkyl group, the carbon number of the alkyl group is preferably from 1 to 5 «The above-mentioned yard group may be a chain, a ring or a branch. Further, the hydrogen atom may be substituted by a fluorine atom or the like. The alkyl group is, for example, a methyl group, an ethyl group, a propyl group, a butyl group, a -44 - 201229151 pentyl group or the like. For example, Ra, Rb, Rc or Rd is preferably a methyl group, an ethyl group, a propyl group or an isopropyl group. More preferably, it is a methyl group or an ethyl group. The aryl group in the above Ra, Rb, RC and Rd is preferably, for example, a phenyl group, a naphthyl group, a methylphenyl group, an ethylphenyl group or a dimethylphenyl group. The halogen in the above Ra, Rb, Re and Rd, for example, fluorine, chlorine, bromine or iodine is preferably 'more preferably chlorine. In the above Ra, Rb, Rc and Rd, in the case of an alkoxy group, the alkoxy group preferably has a carbon number of 1 to 5». The alkoxy group may be a chain, a ring or a branch. Further, the hydrogen atom may be substituted by a fluorine atom or the like. The alkoxy group is, for example, a methoxy group, an ethoxy group, a propoxy group or a butoxy group, more preferably a methoxy group or an ethoxy group.

Re is the same or different as -0-, -NH-, -bC-, or decane bond. Re is preferably -〇-, -NH-, or -C^C-. The Re-system and the two Si-bonded divalent groups 'by Re, 2 or more of the deuterium atoms are in Re, and may be bonded to a linear chain, a ladder type, a cyclic shape, or a heterocyclic ring shape. When η is an integer of 2 or more, the ruthenium atoms may be bonded to each other. Among the compounds (Α1), a tetraalkoxydecane is preferred. In other words, in the above formula (1), η is 1, and Ra, Rb, Rc and Rd are preferably the same or different alkoxy groups having 1 to 10 carbon atoms. Ra, Rb, 11. And Rd may be the same or different. The above alkoxy group may be a chain, a ring or a branch. Further, a hydrogen atom may be substituted by a fluorine atom. The alkoxy group preferably has 1 to 8 carbon atoms, more preferably 1 to 6 Å, particularly preferably 1 to 4 carbon atoms. The compound (A1) is, for example, tetramethoxydecane, tetraethoxydecane, tetra-n-propoxydecane, tetra-iS0-propoxydecane, tetra-n-butoxydecane, tetra-sec- Butoxy decane, tetra-tert-butoxy decane, tetraphenoxy fluorene-45-201229151 alkane, etc., among which, preferably selected from the group consisting of tetramethoxy decane and tetraethoxy decane At least one compound 'is preferably tetraethoxy decane (TE〇s) from the viewpoint of obtaining an easy and low price close to the refractive index of the glass. The compound (A 1 ) is preferably an allyl group having 3 to 5 carbon atoms, a water-reducing radical having 3 to 5 carbon atoms, an acrylic group, or a methacrylic group, from the viewpoint of improving crosslinkability. In other words, in the compound (A1), at least one of Ra, Rb, Re and Rd is preferably an allyl group having 3 to 5 carbon atoms, a water-reducing radical having 3 to 5 carbon atoms, an acrylic group or a methacryl group. One of the forms. The fluoropolymer (B) has the following formula (L): [Chem. 36] CXW-CX3 I I &lt; L) (CX4X5)~i~fc=0) b(〇V-Rf (wherein X1 And X2 is the same or different and is H or F; X3 is H, F, CH3 or CF3; X4 and X5 are the same or different and are η, F or CF3; Rf can have a guanamine bond or a urea bond a fluorine-containing hydrocarbon group having 1 to 4 carbon atoms, or a fluorine-containing hydrocarbon group having an ether bond of 2 to 100 carbon atoms which may have a guanamine bond, a carbonate bond, a urethane bond or a urea bond, and a terminal of the structure i ~3 is a valence of γ (a monovalent organic group containing at least one hydrolyzable metal alkoxide moiety of the carbon number iDO at the end of the lanthanoid end) or a carbon number of 2 to 1 末端 having an ethylenic carbon-carbon double bond at the end An organic group-substituted fluorine-containing hydrocarbon group; &lt;an integer of 〇~3; b and c are the same or different structural units represented by 〇 or 1) (hereinafter also referred to as "structural unit L"). The bond is a divalent group represented by 〇 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The acid ester bond is a divalent group represented by -0-C0NH- -46 - 201229151. The above urea bond is -NH_ In the present specification, the "hydrocarbon group" means an organic group composed of a hydrocarbon, and the "fluorine-containing hydrocarbon group" means that a part or all of a hydrogen atom of a hydrocarbon group is replaced by a fluorine atom. The "hydrocarbon group" may, for example, be an alkyl group, an allyl group, a cyclic alkyl group or an unsaturated alkyl group. The "fluorine-containing hydrocarbon group" may, for example, be a fluorine-containing alkyl group, a fluorine-containing allyl group or a fluorine-containing cyclic alkyl group. The fluorine-containing unsaturated alkyl group or the like. The fluorine-containing polymer (B) has the above-described configuration. Therefore, when the compound (A) is, for example, a Si-tellurium compound, when the compound (A) is formed into SiOx, it can be appropriately mixed with the SiOx. The insulating film formed can be made more excellent in flexibility. The insulating film formed is preferably composed of SiOx, and therefore has excellent heat resistance and transparency. In the structural unit L, a formula (L 1 is preferred) ): [-37] —(-CXlX2—CX^— ί (L1) CCX4XB-H—Rf (where X1, X2, X3, X4, X5, Rf, a, and c are the same as equation (L)) The structural unit L 1 is preferably represented. The gas-containing polymer (B) containing the structural unit L1 has a low refractive index and is adhered to various substrates. Preferably, it is preferable from the viewpoint of improving the durability of adhesion, and it is preferable to improve the curing reactivity by contact of heat, radical or cation. One of the more preferable examples of the structural unit L1 is derived from (L2): -47- 201229151 [Chem. 38] - 6CH2 - CF-) - I (L2) CF2 - O - R f (wherein Rf is the same as formula (L)) The structural unit L2. This structural unit L2 has a low refractive index, is excellent in adhesion to various substrates, is excellent in durability, and is excellent in copolymerizability with other fluorine-containing vinyl monomers. Further, it is preferable not only to improve the near-infrared transparency but also to lower the refractive index.

In the above structural unit L2, Rf is, for example, -(CF(CF3)CQ2-0)nT (Q is the same or different, represents Η or F. T system -CH20-(C0)-CF = CH2, or ·CONH-R23- Si(OR2.)(OR21)(OR22)(R2(), R21 and R22 are the same or different and are an alkyl group having 1 to 5 carbon atoms. Part or all of the R23 hydrogen atom may be replaced by a fluorine atom. One of the preferred forms of the alkyl group having a carbon number of from 1 to 39. Further, another preferred specific example of the structural unit L1 is derived from the formula (L3): [39] - fCF wide CF^ - 丨 (L3) Ο - R f (wherein, the Rf system and the formula (L) The structural unit L3 of the fluorine-containing ethylenic monomer represented by the same). This structural unit L3 has a low refractive index and is excellent in adhesion to various substrates -48 to 201229151, and is excellent in adhesion durability, and has good copolymerizability with other fluorine-containing vinyl monomers. Therefore, it is better. Further, it is preferable because not only the near-infrared transparency but also the refractive index can be lowered. The Rf contained in the above structural units L, L1, L2, and L3 may have a fluorine-containing hydrocarbon group having a carbon number of 1 to 40, or may have a guanamine bond, a carbonate bond, or an amine, as described above. a fluorocarbon group having an ether bond of 2 to 100 carbon atoms in a urethane bond or a urea bond, and 1 to 3 at the end of the structure is Y (the terminal of the Y system contains at least one hydrolyzable metal alkane having 1 to 50 carbon atoms) A fluorine-containing hydrocarbon group substituted with a monovalent organic group at the oxide site or a monovalent organic group having a carbon number of 2 to 10 at the terminal having an ethylenic carbon-carbon double bond. a fluorine-containing hydrocarbon group having 1 to 40 carbon atoms which may have a guanamine bond or a urea bond, or an ether bond having a carbon number of 2 to 100 which may have a guanamine bond, a carbonate bond, a urethane bond or a urea bond In the fluorine-containing hydrocarbon group, the upper limit of the carbon number of the fluorine-containing hydrocarbon group is preferably 30, more preferably 20, and particularly preferably 10 »

Rf may be a fluorine-containing hydrocarbon group having a carbon number of 1 to 40 in which the RfC may have a guanamine bond or a urea bond, or a carbon number of 2 to 100 which may have a guanamine bond, a carbonate bond, a urethane bond or a urea bond. a fluorine-containing hydrocarbon group having an ether bond, and a fluorine-containing hydrocarbon group substituted at 1 to 3 of the terminal of the structure by Y1 (a monovalent organic group having at least one hydrolyzable metal alkoxide moiety having 1 to 50 carbon atoms at the terminal of the Y1 system) Or Rf2 (a fluorine-containing hydrocarbon group having a carbon number of 1 to 40 which may have a guanamine bond or a urea bond, or a carbon number of 2 to 100 which may have a guanamine bond, a carbonate bond, a urethane bond or a urea bond) a fluorine-containing hydrocarbon group of an ether bond, wherein 1 to 3 of the terminal of the structure is substituted by Y2 (a fluorine-containing hydrocarbon group substituted with a carbonic acid carbon-carbon double bond at the terminal end of the ethylene group having 2 to 10 carbon atoms) or Rf3 (may be a carbon number having a guanamine bond or a urea bond of -49 to 201229151 1 to 40, or a carbon number of 2 to 100 which may have a guanamine bond, a carbonate bond, a urethane bond or a urea bond A fluorine-containing hydrocarbon group having an ether bond, wherein 1 to 3 of the terminal of the structure is substituted by Y1, and a fluorine-containing hydrocarbon group substituted by Y2 at the end of the structure is 1 to 2. From the ease of manufacture, Rf is preferably Rf1 or Rf2. The above Rf-based Rf1 (a fluorine-containing hydrocarbon group having a carbon number of 1 to 40 which may have a guanamine bond or a urea bond, or a carbon number of 2 to 100 which may have a guanamine bond, a carbonate bond, a urethane bond or a urea bond) The fluorine-containing hydrocarbon group having an ether bond is substituted at 1 to 3 of the terminal of the structure by Y 1 (the Y 1 -terminal terminal contains at least one monovalent organic group having a hydrolyzable metal alkoxide moiety having 1 to 50 carbon atoms) A fluorine-containing hydrocarbon group is one of preferred forms. The Rf of the above structural unit L is a structural unit of Rf1, hereinafter referred to as a structural unit Μ. Further, among the structural units L 1 , L2 and L3 , Rf is a structural unit of Rf1, and hereinafter referred to as structural units ΜΙ, M2 and M3, respectively. In the above Rf1, the hydrolyzable metal alkoxide having a carbon number of 1 to 50 has a function of generating a hydrolysis/polymerization condensation reaction. Therefore, when the compound (A) is, for example, a Si-tellurium compound, when the compound (A) is formed into SiOx, By crosslinking with this SiOx, an insulating film excellent in heat resistance, transparency, and flexibility can be formed. Preferably, Rf1 is, for example, a formula (Rf1): -D-Ry (Rf1) [wherein, -D-system (D): [40] - (O-RK or -R-0&gt;-n (D (wherein η is an integer of 1 to 20; at least one of the R-based hydrogen-hydrogen atoms is substituted by a fluorine atom, and the divalent fluorine-containing alkyl group having 1 to 5 carbon atoms, and η is 2 or more, -50- 201229151 may be the same or different) expressed as a unit of a fluorine-containing ether; Ry may have a mercapto bond or a urea bond, and a part or all of a hydrogen atom may be substituted with a fluorine atom to have a hydrocarbon group of 1 to 39 carbon atoms, or a hydrocarbon group having an ether bond having a decyl bond, a carbonate bond, a urethane bond or a urea bond, a part or all of a hydrogen atom which may be substituted by a fluorine atom, and having a carbon number of 2 to 99, at the end of the structure 1~ The fluorine-containing hydrocarbon group represented by the hydrocarbon group substituted by Y1 (the Y1 is the same as the Y1 in the above Rf1) is preferred. The -R- is a divalent fluorine-containing alkyl group having 1 to 5 carbon atoms and has at least one Since the fluorine atom is used, the viscosity of the compound is lower and the viscosity is lower than that of the conventional one having a fluorine-free alkylene group or an alkylene ether unit, and the heat resistance, the refractive index decrease, and the improvement are improved. Solubility of general solvents, etc. -D- For example, -(〇CF2CF2CF2 )-, -( CF2CF2CF2O ) - ' - ( OCFQ^Fz ) ( OCF2CFQ1 )- &gt; - (OCFQ2 ) -, - ( CFQ20 ) -, - ( 〇CH2CF2CF2 )-, -( OCF2CF2CH2 ) ( OCH2CH2CF2 ) ( OCF2CH2CH2 ) ( OCF2CF2CF2CF2 ) ( CFQ1CF2〇 ) ( CFQ 'CH20 ) -, - ( CF2CF2CF2CF20 ) -, - ( 0CFQ2CH2 )-, -(CH2CFQ20) - ' - ( OCH ( CH3 ) CF2CF2 ) -, - ( CF ( cf3 ) CF2〇) -, - ( 〇 CF2CF2CH ( ch3 ) ) -, - ( 〇cq32)- and - (CQ32〇) - ( Q1, Q2 are the same or different, H, F or CF3; Q3 is a CF3) or the like, and -D- is preferably one or more repeating units of the above, wherein -D- is preferably selected from -(OCFC^CFz)-, (OCF2CF2CF2) (OCH2CF2CF2) ) - ' - ( OCFQ2 ) - ' - ( OCQ32 )-, - -51 - 201229151 (CFQ'CFzO ) - ' - ( cfq'ch2〇) -, - ( CF2CF2CF20 )-, -(CH2CF2CF20 ) -, - ( Cfq2o)- and -(cq32o) - (Q1, Q2 are the same or different, H, F or CF3; Q3 is CF3) One or more repeating units, more preferably selected from -(OCFQkFi)- , -( OCF2CF2CF2 ) - ' - ( OCH2CF2CF2 ) -, - ( CFC^CFzO )-, -(cfq'ch2o ) - ' - ( cf2cf2cf2o )- and -(CH2CF2CF20 )-(Q1 One or more repeating units of hydrazine, F or CF3), more preferably selected from -(OCFC^CFz) -, -( OCF2CF2CF2 ) ·, -( CFQ'CF2〇) -, - ( CFQ 1 CH20 -- and -(CF 2 CF 2 CF 2 Ο ) - (Q1 system, H, F or CF3) One or more repeating units. Further, the above Q1 is preferably CF3. Wherein -D-te is -(CF(CF3)CF20)-, -(CF(CF3)CH20)-. However, the above-mentioned fluorine-containing ether unit -D- and the aforementioned Rf1 are not represented by -〇〇- (specifically, -ROOR-, -0-0-R-, and -R-0-0-, etc.) The structural unit. Ry in the formula (Rf1), more specifically, preferably the formula (Ry): -Ry1 (Ry) [wherein, Ry1 is a formula (Ry1): -(RU)q-(A)p-R12- (Yla)m ( Ry1 ) (wherein q is 〇 or l; p is 〇 or l; m is an integer from 1 to 3; R11 is a carbon atom which is partially or wholly replaced by a fluorine atom. ～5 of 2 valent hydrocarbon group; A system - 〇 ·, -CONH...-O-COO-, -0-C0NH- or -NH-CONH-: part or all of the R12 hydrogen atom may be replaced by a fluorine atom a 2 to 4 valent hydrocarbon group having a carbon number of 1 to 3 8 to 4 or 4 or a part or all of a hydrogen atom which may be substituted by a -52-201229151 fluorine atom and having a carbon number of 2 to 98 and having an ether bond (but R12) When a part or all of a hydrogen atom is substituted by a fluorine atom and a carbon number of 1 to 3 8 to 4 is a hydrocarbon group, the A system is -CONH- or -NH-CONH-); 丫13 is a formula - [M1O ( R29)a(R30)b(R31)c(R32)d]n-M2(R33)e(R34)f(R35)g(R36)h(R37)i (wherein Μ1 and Μ2 are the same or phase Different, is a metal atom of 2 to 6; a, b, c, and d are 0 or 1, and a + b + C + d + 2 is equivalent to the valence of the metal atom ;1; e, f, g, h and i system 〇 or 1, e + f + g + h + i + l corresponds to the valence of the metal atom M2; R29, RW, R31, R3 2. R33, r34, R35, R36 and R37 are the same or different, and have the formula R38 or R38 (wherein R3 8 is a hydrogen atom, or a carbon number of one or all of the hydrogen atoms may be replaced by a fluorine atom 1~ The hydrocarbon group represented by 10) and the at least one of r29, R30, r31, R32, R33, r34, r35, r36 and r37 are 〇r38; the functional group represented by n = an integer) The group represented by the composite group is preferred. When the structural unit Μ is the structural unit M2, the above-mentioned preferable example of _Ryl - (Ry1) - R12 - is, for example, the following. -53- 201229151 [Chem. 41] CF3

I F2) nriCH2-)-n » —(C F 2 C F)-;„-(CH2^)-5-» -(CH2CF2)Tn^CH2)Tp, CF3

I -{CH2&gt;-n C- (above, m: 0~1 0, n: 0~5, m+n=l~1

I CF3 cf3

I -4CF2CF2fHCF2CFhr4CH2h-, -(CF2CF2h-(CH2CF2)1H-fCH2&gt;ir, CF3 cf3

I I

-(:CF2hrC-. -(CH2CF2h-eCF2CF&gt;5r-(CH2&gt;ir&gt; I cf3 (above, l:l~10, m:l~10, n:0~5> -4CFCF2〇MCF2〇MCX3,2CF2CF2 〇MCX32MCF)t(CH2)t X33 or -&lt;CF2CF〇MCF2〇MCF2CF2CX312〇hCF2(CFMCH2^ X30 χ33 (above, X3., X33 F or CF3; XH, χ32 system 11 or 1?: o + P + Q series 1 to 30: r is 0 or 1; S, t is 0 or 1) 2- is formed by a group of B, and group IVB - R12 - is preferably selected, for example, from -(CH2) 3 -, and CH2) At least one of the groups.

Metals M1 and M2 in Yla, wherein IB group has, for example, &amp;; for example, Ca, Sr, Ba; lanthanum such as zn; liIA group such as Al, Ga; group IIIB, for example, γ; group IVA, for example, Si, Ge -54- 201229151 For example, there is P b ; the VA group has, for example, p, sb; the v group B has, for example, v 'T a ; the VIB group has, for example, w; the lanthanum element has, for example, [a ' Nd. In particular, Y1 a 'wherein Group IV A, preferably si, especially _Si(OCH3)3, -Si(OC2H5)3, -SiCH3(〇C2H5)2, etc. after hydrolysis, polymerization condensation, and having a hydroxyl group The viewpoint of good adhesion and adhesion durability of the substrate is preferable, and -[Si〇(〇CH3)2]n-Si(OCH3)3, _[SiO(OC2H5)2]n- Si (OC2H5) 3 (integral of n-number 1 to 11) is preferably a viewpoint of improving surface hardness in addition to good adhesion and adhesion durability to a substrate having a hydroxyl group after hydrolysis, polymerization and condensation. Among these, Yla is preferably at least one selected from the group consisting of -Si(OCH3)3, -Si(OC2H5)3, and -SiCH3(OC2H5)2. Specific examples of the metal other than the IVA group, Yla such as lanthanum is Ca: -Ca(OR39), preferably a specific example is -Ca(OCH3); Group IIB is Zn:-Zn(OR39), and a preferred specific example is - Zn(OC2H5); ΠΙΑ family is B: -B(OR39)2, preferably a specific example is -B(OCH3)2; ΠΙΒ family is Y: -Y(OR39)2, preferably a specific example is -y(〇 C4h9)2; IVB family is Pb: -Pb(OR39)3, preferably a specific example is - Pb(OC4H9)3

I VB is Ta: -Ta(OR39)4'. A preferred specific example is -Ta(OC3H7)4 VIB is W ·· -W(OR39)5, and a preferred example is -w(oc2h5)5 A preferred example of the element La: -La(OR39)2' is Ι^(0(:3Η7)2 (wherein, one or all of the hydrogen atoms of the R39-based hydrogen atom may be replaced by a fluorine atom-55-201229151 The number of the various metals is not limited to the same, and different types may be combined. The structural unit Μ is preferably the structural unit Μ 1, and the structural unit Μ 1 is more preferably the structural unit M2 or the structure. In the unit M3, where -Rf1 is represented by -D-Ry, the formula (2-2): [Chem. 42] - (CX*X2-CX3) - (2-2) (CX4XS) a (0=0) b (〇) c — D — Ry (wherein χΐ, X2, X3, X4 'X5, D, Ry, a, b, and c are the same as the formula (L) or (Rf1)), and It is preferable from the viewpoint of excellent adhesion durability, lower viscosity, and heat resistance of the substrate. Specifically, the structural unit M1 of the formula (2-2) is preferably -56 - 201229151 [Chem. 43] - ( CF2CF)- I D-Ry (CH2CF)-

I CF2-D-Ry

(CF,CF)-I CFZ-D-Ry

-(CH2CH)-I CH2 — D — Ry -(CH2CH)-! D-Ry -(CH2CF)-

I CF20-D-Ry, one (CF2CF) -

I 0 —D-R y —(CF2CF)-

I CF20-D-Ry (CH2CH)-

I CI-I20-D-Ry

v - (CHZCH)-I O-D-R y (CF,CF) CFiCFj — D — Ry

&lt;CF2CF)-I CH2-D-Ry

&gt; -(CH2CH)-I

CF2-D -Ry -(CH,CF)- , one (CH2CH>-CH, -(CH2C) - CO~D - R y

II o C 0 — D — R y

II o CO-D-Ry

II

O (CH,CF) (CH2CH) C-D-Ry IIo C — D — R y IIo

Ch3 -(CHjC)- I C-D-Ry II O cf3

I -(CH,C)- C-D-Ry

II

O cf3

I (CHjC)- CO-D-Ry

II O, etc. The structural unit formula of the formula (2-2) (2 -57- 201229151 [Chemical 44] -(CXlX2-CX3) - (2-3) (CX4X5) a (O) C-D-Ry

(wherein, X1, X2, X3, X4, X5, D, Ry, a and c are the same structural units as those of the formula (L) or the formula (Rf1)), and from the viewpoint of excellent heat resistance and chemical resistance, Preferably. More specifically, the structural unit of the formula (2-3) is preferably [Chem. 45] -(CH2CF)-, | -(CF2CF)-, I CF2 - D - Ry 1 D - R y -(CFZCF)- , -(CH2CH) - , _ (CH2CH)-, | | 1 CF2-D — Ry CH2-D-Ry D-Ry -(CH2CF)- , one (CF2CF) — , | | CF20-D-Ry 〇— D-Ry-(CF2CF)-, one (CH2CH>-, -(CH2CH)-| | CF20-D-Ry CH20-D-Ry OD-Ry, etc., especially [Chem. 46] -(CH2CF)-1 , a structural unit of (CF2CF>I, I CF2-D-Ry 1 D-Ry -(CH2CF)-, one (CF2CF)-CF2〇-D-Ry OD-Ry, in terms of heat resistance and chemical resistance Preferably, when Rf is Rf2, the carbon-carbon bis-58-201229151 bond in Y2 has the ability to generate a polymerization condensation reaction or the like, and can provide a hardened (crosslinked) body. For example, by contact of a radical or a cation, a polymerization reaction or a condensation reaction may be generated between the fluoropolymer molecules or the compound (A) and, if necessary, a hardening (crosslinking) agent, which may also provide hardening (crossing). The above structural unit L has an Rf of Rf2 (may have a guanamine bond or a urea bond) a fluorine-containing hydrocarbon group having 1 to 40 carbon atoms, or a fluorine-containing hydrocarbon group having an ether bond of 2 to 100 carbon atoms which may have a guanamine bond, a carbonate bond, a urethane bond or a urea bond, and a terminal of the structure ～3 structural units of a fluorine-containing hydrocarbon group substituted by Y2 (a fluorine-containing hydrocarbon group substituted with a carbon number of 2 to 10 of an ethylene carbon-carbon double bond at the end of the Y2 system), hereinafter also referred to as a structural unit N. Further, the structure In the units L1, L2, and L3, the structural units in which Rf is Rf2 are respectively referred to as structural units N1, N2, and N3. Preferably, Rf2, for example, has the formula (Rf2): -D-Ry2 (Rf2) [wherein, - The D-line is the same as the formula (Rf1). The Ry2 system may have a guanamine bond or a urea bond, and a part or all of a hydrogen atom may be substituted with a fluorine atom to have a hydrocarbon group having 1 to 39 carbon atoms, or may have a guanamine bond. a carbonate bond, a urethane bond or a urea bond, a hydrocarbon group having a carbon number of 2 to 9 9 or a part of a hydrogen atom which may be substituted by a fluorine atom, and a 末端 2 at the end of the structure is γ 2 (The Y2 is the same as the Y2 in the above Rf2), and the substituted hydrocarbyl group is preferably a fluorine-containing hydrocarbon group. The preferred form of the -D-Ry2 is, for example, the above-exemplified by -D-Ry. In the form, Ry is changed to Ry2. The preferred Y2 is the first system-59-201229151 [Chem. 47] - (-04-a~~( C =〇&gt;- e γ2« (wherein the Y2a end An alkenyl group having a carbon number of 2 to 5 having an ethylenic carbon-carbon double bond or a gas-containing susceptibility; d and e being the same or different 'is 〇 or 1). Preferably, Y2a is -CX6=CX7X8 (wherein X6 is H, F, CH3 or CF3; X7 and X8 are the same or different and are Η or F), and the group is caused by contact with free radicals or cations. It is preferred because it has high hardening reactivity. A specific example of a preferred Y2a is [Chem. 48] CH3

I -ch=ch2, -cf=ch2, -c=ch2, _cf=cf2, and so on. Better Y2 series - 0 (C = 0) CX6 = CX7X8 (wherein X6 is Η, F, CH3 or CF3; x7 and x8 are the same or different, Η or F), this group is free Since the hardening reactivity by the base contact is high, it is preferable, and it is preferable to obtain a cured product by photohardening or the like. A specific example of the above-described Y2 is as follows - for example, -60 - 201229151 [Chem. 49]

CHS

I

-oc —ch=ch2, an oc-c=ch2, an oc-cf=ch2, II II II O 0 0 cf3

I -oc —c=ch2, an oc-cf=cf2

II II oo Other preferred examples of Y2 are [Chem. 50] -ch=ch2, one ch2ch=ch2, -OCH2CH=CH2, -och=ch2, _ocf=cf2, -c-och=ch2, one c-och2ch =ch2

II II 0 o

X

I -ch-ch2oc-c=ch2 (x:h, f, ch3),

1 II

OH O 〇 !l -ch-ch2occx=ch2 (x:h, f, ch3),

I 0CCX=CH, II ^ o

-chch2och2ch=ch2, -CHCH2OCH2CH=CH2 I I OH OCH2CH=CH2, etc. Among Y2, those having a structure of -〇(c=o)cf=ch2 can improve the near-infrared transparency and have high reactivity (hardening), and can effectively obtain -61 - 201229151 to hardened materials, so good. The organic group Y2 having a carbon-carbon double bond in the aforementioned side chain can be introduced into the end of the polymer main chain. In the fluoropolymer used in the present invention, -Rf2- contained in the structural units N, N1, N2 and N3 (the group in which γ2 is removed in the above Rf2) may have a carbon number of 1 to 40 of a guanamine bond or a urea bond. The divalent fluorine-containing hydrocarbon group or a fluorine-containing hydrocarbon group having an ether bond having a carbon number of 2 to 100 which may have a guanamine bond, a carbonate bond, a urethane bond or a urea bond is preferred. The -Rf2- group may be a fluorine atom bonded to a carbon atom contained therein, and is generally a divalent fluorine-containing hydrocarbon group having a fluorine atom bonded to a hydrogen atom or a chlorine atom at a carbon atom, and an ether bond The fluorine-containing hydrocarbon group is preferably a fluorine atom (high fluorine content), more preferably a perfluoroalkylene group or a divalent perfluoroalkyl group having an ether bond. The fluorine content in the fluoropolymer is 25% by mass or more, preferably 40% by mass or more. Thereby, not only the near-infrared transparency of the fluoropolymer (B) but also the refractive index can be lowered, in particular, in order to improve the heat resistance or the elastic modulus of the insulating film, even if the degree of hardening (crosslinking density) is increased, it can be maintained. It is preferred to have a high near-infrared transparency or to maintain a low refractive index. When the carbon number of the -Rf2- group is too large, in the case of a divalent fluorine-containing hydrocarbon group, the solubility in a solvent may be lowered or the transparency may be lowered, and in the case of a 2-valent fluorine-containing hydrocarbon group having an ether bond, the polymerization may be lowered. The hardness or mechanical properties of the object itself or its hardened material are not good. The carbon number of the divalent fluorine-containing hydrocarbon group is preferably from 1 to 20, more preferably from 1 to 10. The carbon number of the divalent fluorine-containing hydrocarbon group having an ether bond is preferably from 2 to 30, more preferably from 2 to 20. A preferred specific example of -Rf2-, for example, -62- 201229151 [Chem. 51] cf3

I -fCF^CHihr , -(CFaCF^CH^ , -fCH2CFjh^CH^, cf3

I ~4CH2hC— (above, m: 0~1 0, n: 0~5),

I cf3 •(C F 2 C F 2&gt;T~f C F 2 c Fhrf C H 2h-, -fCFiCFa^CHaCFj^CH^, cf3 cf3

I I -fCF2^-C- . -fCH2CF2h-fCF2CFhr-(CH2^-,

I CF3 (above, 1: 1 to 10, m: 1 to 10, η: 0 to 5)

4CFCF2〇MCF2〇MCX3S2CF2CF20&gt;T(CX36MCFh&lt;CH2-)T X34 X37 or -(CF2CF〇h&lt;CF20&gt;7&lt;CF2CF2CX3s20&gt;-qCF2(CFMCH2-)-r X37 X34 is similar, X34, X37 is F or CF3; X3S, X36 system or F; Ο + Ρ + Q system 1~3 0; r system 0 or 1: s, t system 0 or 1). The structural unit N constituting the fluoropolymer used in the present invention is preferably a structural unit N1, and the structural unit N 1 is more preferably a structural unit N2 or a structural unit N3. Next, specific examples of the structural unit N2 and the structural unit N3 will be described. Preferred examples of the monomer constituting the structural unit N2 are, for example, -63-201229151 [Chem. 52] CH2=CFCF2OCF-Y2, CH2=CFCF2OCFCH2-Y2.

I I cf3 cf3 ch2=cfcf2ocfch2o-y2

I cf3 CH2=CFCF2CKCFCF20)-nCF-Y2

I I cf3 cf3 CH2=CFCF20(CFCF20)7iCFCH2-Y2,

I I CF3 cf3 CH2=CFCF20(CFCF20&gt;t; CFCH20CH2CHCH2-Y2,

II cf3 cf3 CH2 = CFCF20-(CF2CF20&gt;7, CF2-Y2, 0H2 = CFCF2O-(CF2CF2〇HCF2CH2-Y2, CH2 = CFCF2CHCF2CF2CF2〇hCF2CF2-Y2, CH2 = CFCF2(MCF2CF2CF2〇)TiCF2CF2CH2 — Y2, CH2 = CFCF2O^ CH2CF2CF20)liCH2CF2-Y24 ch2=cfcf2o-&lt;ch2cf2cf2o^ch2cf2ch2-y2 « CH2=CFCF2O^CF2CF2&gt;-nY2 &gt; cf3

I CH2 = CFCF20 (CF2CFf-nCH2-Y2 (above, n is an integer from 1 to 30: Y2 is the same as γ2 in the above Rf2. More specifically, for example, -64 - ) 0 201229151 [Chem. 53] CH2=CFCF2 〇-fCFCF2〇hCFCH2OCCX=CH2 ,

1 i II cf3 cf3 o CH2=CFCF20-(CFCF20hCFCH20CH2CHCHz0CCX=CH2 ,

I i II cf3 cf3 o occx=ch2

II o CH2 = CFCF20-fCFCF20hCFCH20CH=CH2 ,

I I cf3 cf3 CH2=CFCF20-fCFCF20&gt;7rCFCH20CH2CH0CH=CH2 ,

I I I cf3 cf3 och=ch2 CH2=CFCF2〇4CFCF2〇hCF = CF2 &gt;

I cf3 CH2=CFCF2〇-(CFCF2〇hCFCOOCH=CH2 ,

I I cf3 cf3 CH2=CFCF2〇-(CFCF2〇hCFCH2OCH2CH=CH2 ,

I I cf3 cf3 CH2=CFCF20-(CFCF20hCFCH20CH2CHCH20CH2CH=CH2,

I I I cf3 cf3 och2ch=ch2 /Rf7 CH2=CFCF2CKCFCF2〇hCFC ——OCCX=CH2

I I \Rfe II cf3 cf3 Kt o ch2ch=ch2 CH2=CFCF204CFCF2〇h; CF-C-〇CCX=CH2

I I II cf3 cf3 o ch2ch==ch2 (The above, Rf7, Rf8 are perfluoroalkyl groups having a carbon number of 1 to 5, n is an integer of 0 to 30; X is H, CH3, F or CF3). The preferred embodiment of the monomer constituting the structural unit N 3 is, for example, -65 - 201229151 CF2 = CFOCF2CF2-Y2, CF2 = CFOCF2CF2CH2-Y2, CF2 = CFOCF2CF2CH2OCH2CHCH2-Y2

I

Yz CF^CFO-^CF^F^Y2,

I cf3 CFj^CFCHCFaCFOhCFzCFaCHa-Y2

I CF3 CF2=CF〇4CF2CFO)-sCF2CF2CH2OCH2CHCHz-Y2 ,

I I cf3 y2 CF2 = CF〇4CF2^iY2 , CF2 = CF (XCF six CH2-Y2, CF2=CFOCF2CF2OCF2-Y2, cf2=cfocf2cf2ocf2ch2-y2, cf2=cfocf2cf2ocf2ch2och2chch2-y2

I Y2 CF2 = CFOCF2CF2CH2OCF2CF2-Y2 , CF2 = CFOCF2CF2CH2OCF2CF2CH2-Y2 (The above Y2 is the same as Y2 in the above Rf2; n is an integer from 1 to 30). In more detail, for example, -66 - 201229151 [Chemical 55] CF2=CFO (CF2CF〇MCFih; CH2OCCX = CH2,

I II cf3 〇 CF,=CFO(CF2CF〇MCF2&gt;irCH2OCH2CHCH2OCCX = CH2.

I II cf3 〇 occx=ch2

II o CF2=CFO-(CF2CF〇MCF2^CH2OCH=CH2,

I cf3 CFfCFCKCFsCFOMCF^CHzOCHaCHOCHcCHu

I I cf3 och=ch2 CF2=CF(XCF2CFO&gt;irfCF2^COOCH=CH2v

I cf3 CF2=CFCHCF2CF〇Hr&lt;CF2fH-CH2OCH2CH = CH2,

I CF3 cf2=cfo^-cf2cf〇mcf2^ch2och2chch2och2ch=ch2,

I I cf3 och2ch=ch2 R f 9 t CF2=CF〇-&lt;CF2CF〇h^CF2&gt;7C-〇CCX=CH2 , CF3 〇

Rf 10 CH2CH = CH2

I CF2=CF〇-(CF2CFO&gt;7^CF2&gt;1rC-〇CCX=CH2

I II cf3 o ch2ch=ch2 (The above, Rf9, Rf1G are perfluoroalkyl groups having 1 to 5 carbon atoms; m is an integer of 0 to 30; η is an integer of 1 to 3; X is H, CH3, F or CF3 )Wait. Preferred specific examples of the monomer constituting the structural unit N of the fluoropolymer other than the structural units N2 and N3, for example,

S -67- 201229151 CF2=CFCF2-〇-Rf2-Y2, CF2=CFCF2〇-R f2-CH2CHCH2-Y2

I Y2 CF2 = CF-R f 2-Y2, cf2 = cf-r f 2-ch2chch2-y2.

I Y2 CH2 = CH-R f 2-Y2, CH2 = CH-R f 2-ch2chch2-y2

I Y2 CH2 = CHO-R f 2-y2, ch2 = cho-r f 2-ch2chch2-y2 Y2 (the above, Y2 and Rf2 are the same as the above examples) and the like. More specifically, for example, -68- 201229151 CF2=CFCF2OCF2CF2CF2-Y2, CF2=CFCF2OCF2CFzCF2CH2-Y2, cf2=cfcf2ocf2cf-y2»cf2=cfcf2ocf2cfch2-y2

I I cf3 cf3 cf2=cfcf2ocf2cfch2och2chch2-y2 ,

II CF3 Y2 CF2=CFCF2-Y2, CF2 = CFCF2CH2-Y2, CF2=CFCF2CH2OCHzCHCH2-Y2 . Ϋ2 CH2=CHCF2CF2CH2CH2-Y2 1 CH2=CHCF2CF2-Y2, CH2=CHCF2CF2CH2-Y2, CH2=CHCF2CF2CF2CF2-Y2, CH2=CHCF2CF2CF2CF2CH2- Y2, CH2=CHCF2CF2CF2CF2CH2OCH2CHCH2-Y2, CH2=CHOCH2CF2CF2-Y2, CH2=CHOCH2CF2CF2CH2-Y2 (above, Y2 is the same as Y2 in the above Rf2) and the like. The fluoropolymer (B) can be further composed of structural unit A. The structural unit A may be a structural unit derived from a monomer copolymerizable with a fluorine-containing ethylenic monomer which provides the structural unit L represented by the formula (L). When the structural unit A is an optional component and can be copolymerized with a fluorine-containing ethylenic monomer which provides the structural unit L, it is not particularly limited, and the intended use of the fluoropolymer or the cured product thereof, the required properties, etc. Just choose it. The structural unit A has, for example, the following structural unit. (A 1 ) Structural unit derived from a fluorine-containing ethylenic monomer having a functional group - 69 - 201229151 This structural unit A1 is used to impart adhesion to a substrate to a fluoropolymer and a cured product thereof, or to a solvent, In particular, a viewpoint of solubility of a general-purpose solvent is preferred, and a viewpoint of imparting cross-linking properties or the like is preferable. Structural unit A1 of a preferred fluorine-containing ethylenic monomer having a functional group (A1): [Chem. 58] - ^ CXUX12 - CX13^ - I (Al) (CX142^-Tr-^〇^i-Rf^ Z1 (wherein Xn, X12 and X13 are the same or different and are H or F; X14 is Η, F, CF3; h is an integer of 0~2; i is 〇 or 1; Rf4 is carbon number 1~40 a divalent fluorine-containing alkyl group or a divalent fluorine-containing alkyl group having an ether bond of 2 to 100 carbon atoms; Z1 is selected from the group consisting of -OH, -CH2〇H, -COOH, a carboxylic acid derivative, -S03 Η a structural unit represented by a group of a sulfonic acid derivative, an epoxy group and a cyano group, wherein preferably CH2 = CFCF2〇Rf4-Z1 (wherein Rf4 and Z1 are the same as described above) Formula (A1-1): [Chem. 59] —eCH2-CF·)—丨(A1-1) CF2〇-R f 4-Z! (wherein R f4 and Z 1 are the same as formula (A 1 ) ) indicates the structural unit. More specifically, for example, -70- 201229151 [化60] ch2=cfcf2ocf-z1 , ch2=cfcf2ocfcf2ocf-z

I I I cf3 cf3 cf3 CH2 = CFCF204CFCF2〇hCF-Z,,

I I cf3 cf3 ch2=cfcf2och2cf2-z1 , CH^CFCFjOCHgCF^FjOCF-Z1,

I cf3 ch2 = cfcf2ocf2cf2ocf2-z1, CH2 = CFCF204CF2CF2 〇 hCF2-Z1 The structural unit of the fluorine-containing ethylenic acid derived from the monomer (the above - Z1 is the same as the formula (A1)) is preferable. Further, it is preferable that CF2 = CFORf4-Z1 (A1-2 (where Rf4 and Z1 are the same as the formula (A1)) depleted [Chem. 61] -f CF, -CF&gt; I OR ίΑ-Ζι( In the formula, Rf4 and Ζ1 are the same as the formula (A1), and more specifically, for example, there is a structural unit represented by (A 1 - 2). -71 - 201229151 [Chem. 62] CF2 = CFOCF2CF2-Zl , CF^CFOCFgCF^Hz -Z1, CF2=CFOCF2CFOCF2CF2 —Z1 CF3 , CF2=CFOCF2CFOCF2CF2CH2-Zl cf3 , CF^CFO-iCF^Z1 » CF2=CF04CF2^CH2-Z1 , CF^CFOCF^FzOCFg-Z1» CF2=CFOCF2CF2OCF2CH2-Z\ cf2=cfocf2cf2ch2ocf2cf2 -z1 , CF2 = structural unit derived from a monomer such as CFOCF2CF2CH2OCF2CF2CH2-Zl (above, z1 is the same as formula (A1)). Other, fluorine-containing ethylenic monomer having a functional group 'for example, CF2 = CFCF2-0 -Rf2-Z1 ' CF2 = CF-Rf2-Z' ' CH2 = CH-Rf2-Z' ' CH2 = CHO-Rf2-Z' (The above, -Rf2- is the same as -Rf2- described above; Z1 is the same as (A1) the same), etc., more specifically, for example, -72-201229151 [Chem. 63] CF2=CFCF2OCF2CF2CF2-Z1, cf2=cfcf2ocf2cf2cf2ch2-z\cf2=cfcf2ocf2cf-z1, CF2=CFCF2OCF2CF-CH2-Zl,

II CF3 cf3 CF^CFCFj-Z1 , CF^CFCFaCH^Z1 , CH2=CHCF2CF2CH2CH2-Zl , ch2=chcf2cf2-z1 , CH2=CHCF2CF2CH2-Zl , CH^CHCFgCFjjCF^F^Z1 . CH2=CHCF2CF2CF2CF2CH2-Z1 , CH2=CHO -CH2CF2CFz-Z,, ch2=choch2cf2cf2ch2-z1 (above, z1 is the same as formula (A1)) and the like. (A2) A structural unit derived from a fluorine-free ethylenic monomer having no functional group. The structural unit A2 can maintain a lower refractive index of a fluoropolymer or a cured product thereof, and a viewpoint of lower refractive index. , preferably. By selecting the monomer, the mechanical properties of the polymer, the glass transition temperature, and the like can be adjusted, and in particular, copolymerization with the structural unit L can increase the glass transition point, which is preferable. The structural unit (A2) of the fluorine-containing ethylenic monomer, for example, has the formula (A2): [C64] (CX15X16-CX17^-I (A2) (CX182^nH-〇VfRf s^_Z2 (wherein X15, X16 and X18 are the same or different and are H or F; X17 is Η, F or CF3; hi, il and j are the same or different, 0 or 1; Z2 is H, F, C1 or carbon number a linear or branched perfluoroalkyl group of 1 to 16; -73- 201229151

Rf5 is preferably a divalent fluorine-containing alkyl group having 1 to 20 carbon atoms or a divalent fluorine-containing alkyl group having 2 to 100 carbon atoms. The specific example is preferably, for example, [Chem. 65] cf2 = cf2, cf2 = ch2, cf2 = cfci, cf2 = cfcf3 c f3 CF2 = C &lt;&quot; , CF2 = CFO(CF2)nF . CH2 = C(CF3 ) 2 CF3 (n : 1~5) cf2=cfh, cf2=cci2, cf2=cfocf2cfo-c3f

I cf3 CH2 = CF4CF^Z2 (Z2 is the same as (A2), n: 1~1 0), CH2 = CHOCHr&lt;CF2&gt;1IZ2 (Z2 system (A 2 &gt; identical, n : 1 to 1 etc.) The structural unit derived from the body. In particular, the viewpoint of maintaining the refractive index of the hard curable fluoropolymer or the like is preferably from a group selected from the group consisting of tetrafluoroethylene, chlorotrifluoroene and hexafluoropropylene. When at least one monomer of ruthenium (A3) has a fluorine-containing aliphatic cyclic structural unit, when the structural unit A3 is introduced, 'the transparency can be improved, and the fluoropolymer of the glass transition temperature can be expected for the cured product. Preferably, the fluorinated aliphatic cyclic structural unit A3 ' has, for example, a formula (having an ether 0), and the hardened material of a vinylidene fluoride structural unit is obtained by high glass hardness and hardness A3): -74- 201229151 [Chem. 66] CX23 X 24)n2 -{(CX,9X20)nlCX21 CX22(CX25X26)n3}~ (A3)

I I (0)n4 (〇)n5

Rf6 is different, cf3 ether bond phase (wherein X19, X2Q, X23, X24, X25 and X26 are the same or phase H or F; X21 and X22 are the same or different and are Η, F, Cl or Rf6; a fluorine-containing alkyl group having 1 to 1 carbon atom or a fluorine-containing stretching group having 2 to 10 carbon atoms; n2 is an integer of 0 to 3; nl, n3, n4 and n5 are the same or different and are 〇 Or an integer of 1) is preferred. For example, there is [Chem. 67] CX21 — CX22)-

I I 〇 〇 \ /

The Rf6 structure (wherein Rf6, X21, and X22 are the same as the formula (A3)) represents the unit. Specifically, for example, there is -75-201229151 [Chem. 68] -fCF-CFf-I I 〇〇-fCF-CF>-II ο οX cf3 cf3 -fCF-CF &gt;-IIO OX F CF, -(-CF -CF^- i I , oo cf2ci cf2ci +CH-CH household II o oX CF3 CF,

-fCH-CH)-I I O OX F F Bu 3 1 xo/ F-:13⁄4 CICIOV c

Cl -fCF-C Bu I I Ο οX cf3cf3

-fCF2-CF-CF-CF2)- 〇CF2 \ / CFZ cf2/ \ -f CF2CF CFf-I I 〇cf2 CX23XM/ \ -fCFCF CF)-\ / O-CF, cf2 CF2-o cf2 _ζ.αχ. 9χ2〇_〇ρ CF — CF2- 0

-(-CX,9X20CF-CFC F2&gt;-I

O ocf3 -4CF-C^- I I o 〇 -^CF-CF&gt;- 〇 cf2-cf

I CF, (wherein, X19, X2Q, X23 and X24 are the same as formula (A3)), etc., and other fluorine-containing aliphatic cyclic structural units, for example, -76- 201229151 [Chem. 69]

o

CF, -CF CF, and so on. (A4) The structural unit derived from the fluorine-free ethylenic monomer can improve the solubility in a general-purpose solvent by introducing the structural unit A4, or can improve the phase with an additive such as a photocatalyst or, if necessary, a hardener added. Solubility. Specific examples of the non-fluorine-based ethylenic monomer include α-olefins: vinyl ether or vinyl ester monomers such as ethylene, propylene, butylene, vinyl chloride, and vinylidene chloride: CH2 = CHOR, CH2 = Allyl monomer such as CHOCOR10 (R10: hydrocarbon group of carbon number 1 to 20): CH2 = CHCH2C1, CH2 = CHCH2OH, CH2 = CHCH2COOH, CH2 = allyl ether monomer such as CHCH2Br: CH2 = CHCH2OR10 (R10 : a hydrocarbon group having a carbon number of 1 to 20), CH2 = CHCH2OCH2CH2COOH, -77- 201229151 [Chem. 70] CH2 = CHCH2OCH2CHCH2

ο CH2 = CHCH2OCH2CHCH2, etc.

I I

OH OH Acrylic or methacrylic monomers: for example, acrylic or methacrylic acid, methacrylic acid, methacrylic acid esters, maleic anhydride, maleic acid, maleic acid esters and the like. Some or all of the hydrogen atoms of these non-fluorine-based ethylenic monomers are more preferably replaced by a heavy hydrogen atom. (A5) a structural unit unit derived from an alicyclic monomer, a copolymerization component of N, more preferably a structural unit Μ, N and the above-mentioned fluorine-containing ethylenic monomer or non-fluoroethylenic monomer (previously Specific examples of the structural unit ' of A3 and A4) and the introduction of the alicyclic monomer structural unit A5' as the third component to achieve high glass transition temperature or high hardness of the scorpion ring monomer A5, for example -78- 201229151 [化71]

ABCD (m is an integer of 0 to 3; A, B, C, and D are the same or different, and are η, F, Cl, COOH, CH2OH, or a C 1 to 5 perfluoroalkyl group, etc.) An alicyclic monomer, an alicyclic monomer such as G-0·0-0·0-©, or a derivative thereof is introduced into such a derivative or the like. The fluoropolymer (B) may be a polymer composed only of the structural unit L or a copolymer composed of the structural unit L and the structural unit A. Further, the structural unit L may be only a structural unit Μ or only a structural unit N, and both the fluoropolymer (Β) structural unit Μ and the structural unit 可 may be contained in the fluoropolymer (Β). Further, it may be a copolymer composed of a structural unit Μ, a structural unit Ν, and a structural unit Α. When the fluoropolymer is composed only of the structural unit L, it is more effective from the viewpoint of imparting the durability of adhesion to the substrate and imparting high hardness to the film. When the fluoropolymer is a copolymer, the structural unit L is a unit of the total structure of the fluoropolymer (B) constituting -79 to 201229151, and may be 〇1 mol% or more, but in order to be cured ( Crosslinking is in the case of a cured product having high hardness, excellent abrasion resistance, excellent scratch resistance, chemical resistance, and solvent resistance, and is 2 mol/〇 or more, preferably 5 mol% or more, more preferably In particular, when it is necessary to form an insulating film having excellent heat resistance, transparency, and low water absorbability, it contains 1% by mole or more, preferably 20% by mole or more. Preferably, it contains 30 mol% or more, particularly preferably 4 mol% or more. The structural unit L· is relative to the total structural unit constituting the fluoropolymer (β), preferably less than 1 mol. The molecular weight of the fluoropolymer (Β), for example, the number average molecular weight may be selected from the range of 500 to 1, 〇〇〇, 〇〇〇, preferably from the range of 1000 to 500 000, particularly preferably It is selected from the range of 2,000 to 200, 〇〇〇. When the molecular weight is too low, mechanical properties are easy even after hardening. Insufficient, in particular, the insulating film is liable to become brittle and insufficient in strength. When the molecular weight is too high, solvent solubility is deteriorated, or film formation or flatness is likely to be deteriorated particularly when a film is formed, and a fluoropolymer (Β) is used. The storage stability is not stable. The optimum number average molecular weight is selected from the range of 5,000 to 10,000,000. The number average molecular weight is determined by polystyrene, and can be determined by the measurement method carried out in the examples described later. The fluoropolymer (Β) is composed of, for example, a structural unit L. If necessary, it may be composed of a structural unit or may be a structural unit L with respect to the entire structural unit constituting the fluoropolymer. · 1 to 100% of the mole %, and the structural unit A contains 0 to 9 9 · 9 mole % of the fluoropolymer having an average molecular weight of 500 to -80 - 201229151 1,000,000. At this time, the structural unit L may be a structure The unit Μ is 0.1~1 00 mol% 'The structural unit N is 〇~99.9 mol%' or the structural unit Ν is 0. 1~1 〇〇莫耳% 'Structural unit Μ is 〇~99.9 mol%. , fluoropolymer (Β) can be made up of structural units L The configuration may be composed of the structural unit A1 and the structural unit A2 as necessary, or may be a structural unit L of 0.1 to 90 mol%, and the structural unit A1 with respect to the entire structural unit constituting the fluoropolymer (B). 0 to 99.9 mol% and the structural unit A2 is 〇~9 9.9 mol%, and the total of the structural unit A1 and the structural unit A2 is 10 to 99.9 mol%, and the number average molecular weight is 500 to 1,000,000. The content of the structural unit L in the fluoropolymer (B) is preferably 0.1 mol% or more with respect to the total structural unit constituting the fluoropolymer, but is hardened (crosslinked). When the cured product is excellent in abrasion resistance and scratch resistance and is excellent in chemical resistance and solvent resistance, it is 2 mol% or more, preferably 5 mol% or more, and more preferably 1 〇. Moore / 〇 above. In particular, when it is necessary to form a cured film having excellent heat resistance, transparency, and low water absorbability, it is contained in an amount of 1% by mole or more, preferably 20% by mole or more, and more preferably 50% by mole or more. The upper limit is less than 100% of the mole. The content of the structural units A 1 and A 2 is 9 9.9 mol% or less. The total molar percentage of A1+A2 is ι〇~99 9 mol%. When the molar percentage is less than 5%, the low refractive index cannot be maintained, and the hardness of the film after hardening is lowered, which is not preferable. More preferably, the total molar amount of A 1 + A 2 is 2 〇 mol % to -81 - 201229151, 'more preferably 30 mol% or more' and 6 〇 mol% or less, more preferably 50 mol% the following. Further, it may be 90% or less, or 80% or less, or 50% or less. In the fluoropolymer (B), the structural unit l [structural unit M (M1, M2, and M3) and the structural unit n (N1, N2, and N3)] and the structural unit A (A 1 and A2 ) or The composition ratio of the structural unit μ and the combination of the structural unit Ν and the structural unit 如 can be exemplified as described above, and various options can be selected depending on the intended use, physical properties (especially glass transition temperature, hardness, etc.), function (transparency), and the like. . The molecular weight of the fluoropolymer (B), for example, the number average molecular weight may be selected from the range of 500 to 1,000,000, preferably selected from! The range of 〇〇〇~500,000 is particularly preferably selected from the range of 2, 〇〇〇~200,0〇〇. When the molecular weight is too low, the mechanical properties are liable to be insufficient even after hardening, and in particular, the cured product and the cured film are liable to become brittle and the strength is insufficient. When the molecular weight is too high, the solubility of the solvent is deteriorated, or particularly when the film is formed, the film formability or the flatness is liable to be deteriorated, and the storage stability of the fluoropolymer is liable to be unstable. The optimum number average molecular weight is selected from the range of 5,000 to 10,000,000. The fluoropolymer (B) is preferably dissolved in a general solvent, and is soluble in, for example, a ketone solvent, an acetate solvent, an alcohol solvent, an aromatic solvent, or a mixture containing at least one general solvent. Solvents are preferred. In the process of forming a film, it is necessary to form a film having a thickness of 3 μm or less, for example, about 0.1 μm, which is excellent in film formability and homogeneity, and is therefore preferable in terms of productivity. . The above fluoropolymer (Β) may be subjected to any of the following methods, -82-201229151 (1) pre-synthesis of a monomer having Rf for poly(2)-synthesis of a poly(polymer) having another functional group by a polymer reaction Functional group conversion, introduction method (3) Two methods (1) and (2) are used. Among these methods, the method of (3) is based on a carbon-carbon double bond at the side of the side lock to generate a hardening reaction. A method of hardening fluoropolymerization of a hydrolyzable metal alkoxide portion is preferred. The fluoropolymer (B) can be produced, for example, by the method of No. 02/18457 and JP-A-2006-027958. In the polymerization method, for example, a radical polymerization method, an anion polymerization method, or the like, in order to obtain a monomer exemplified as the hydrolyzable metal alkene, it is preferable to provide a structural unit for a radical from the viewpoint of composition, molecular weight, etc., or industrialization. L fluorine-containing ethylenic single system [Chem. 73] CX^^CX4

I &lt;&lt;:χ4χ5Η—~fc=0) „(04^—Rf (where X1 and X2 are the same or different, Η or , (:Η3 or CF3; X4 and χ5 are the same or different) , Rf is the same as above. a is an integer of 〇~3; b and a combined method, and the method of introducing the polymer functional group Rf enables the fluoropolymer to obtain the compound of the present invention. (a method of polymerization which is easy to control the polymerization quality of the cation oxide site by the square polymerization method described in the International Publication No. 2). The following formula: F; X3 system, FH, F or CF3; Or a different -83-201229151, which is a monomer represented by hydrazine or 1). Among the above monomers, preferred ones of χ^χΐχΐχ4, X5, a, b, C, and Rf are the same as those of the formula (L). When the fluorine-containing composition for forming a coating-type insulating film of the present invention is based on the total mass of the compound (A) and the fluoropolymer (B), the compound (A) is preferably 50% by mass or more. More preferably, The compound (A) is 60% by mass or more, more preferably 80% by mass or more. When the compound (A) is too small, heat resistance or transparency may be deteriorated. When the total mass of the compound (A) and the fluoropolymer (B) is used, the fluoropolymer (B) is preferably 〇% by mass or more, more preferably 0.5% by mass or more. Fluoropolymer (B) When the amount is too small, the dielectric constant is high, and the flexibility may be deteriorated. The fluorine-containing composition for forming a coating-type insulating film is preferably an organic solvent other than the compound (fluorene) and the fluoropolymer (Β). The organic solvent is preferably one which dissolves the above fluoropolymer. The organic solvent is, for example, methyl cellosolve, ethyl cellosolve, methyl cellosolve acetate, and ethyl cellosolve acetate. Solvent-based solvent; oxalic acid diacetate, ethyl pyruvate, ethyl 2 · hydroxybutyrate, ethyl acetonitrile acetate, butyl acetate, amyl acetate, ethyl butyrate, butyl Butyl butyl ester 'methyl lactate, ethyl lactate, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, 2-methylisobutyric acid methyl ester, ethyl 2-hydroxyisobutyrate, etc. Ester solvent; propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monobutyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, C a propylene glycol solvent such as alcohol monobutyl ether acetate or dipropylene glycol dimethyl ether; a ketone solvent such as 2-hexanone, cyclohexanone, methylpentanone, 2-heptanone or methyl isobutyl ketone An alcohol solvent such as methanol, ethanol, propanol, isopropanol or butanol-84-201229151: an aromatic hydrocarbon such as toluene or xylene, or a mixed solvent of two or more thereof. The solubility of the substance (B) may be a fluorine-based solvent if necessary. Examples of the fluorine-based solvent include CH3CC12F (HCFC-141b), CF3CF2CHCI2/CCIF2CF2CHCIF mixture (HCFC-225), perfluorohexane, and perfluoro(2-butyl). In addition to tetrahydrofuran), methoxy-nonafluorobutane, 1, 3-bis-trifluoromethylbenzene, etc., there are [chemical 74] H (CF2CF2hCH2〇H (n: an integer of 1 to 3), F (CF2 ^CHzOH (integer of 11:1 to 5), a fluorine-based alcohol such as CF3CH (CF3) oh; benzotrifluoride, perfluorobenzene, perfluoro(tributylamine), C1CF2CFC1CF2CFC12, and the like. These fluorine-based solvents may be used singly or in the form of a mixed solvent of one or more of a fluorine-based solvent and a non-fluorine-based or fluorine-based solvent. In the above, it is preferably selected from at least one solvent selected from the group consisting of a ketone solvent, an acetate solvent, an alcohol solvent, and an aromatic solvent, and more specifically, 'coating property and coating. In terms of productivity, etc., at least one solvent selected from the group consisting of methyl isobutyl ketone, propylene glycol methyl ether acetate (PGMEA), 2 • heptanone (ΜAK), and lactic acid ester is preferable. The fluorine-containing composition for forming a coating-type insulating film of the present invention preferably further contains a curing initiator. In particular, when γ is Υ2 having a monovalent organic group having 2 to 10 carbon atoms and having an ethylenic carbon-carbon double bond at the end, the curing initiator is preferably more preferred than -85 to 201229151. The curing initiator for the fluorine-containing composition for forming a coating-type insulating film of the present invention may, for example, be a photoradical generator, a thermal radical generator or the like. For example, in addition to the active energy ray hardening initiator, a heat hardening or a room temperature 2 liquid hardening type hardener may be used. From the viewpoint of a lower temperature hardening reaction, an energy line hardening initiator is preferred. The type of Y (free radical reactivity or cation (acid) reactivity), the type of active energy ray used (wavelength range, etc.), the irradiation intensity, and the like are appropriately selected. The active energy ray hardening initiator starts to generate radicals or cations (acids) by irradiating an electromagnetic wave such as an ultraviolet ray, an electron beam, an X-ray, a gamma ray or the like in a wavelength range of, for example, 3 50 nm or less. A catalyst for the crosslinking of a fluoropolymer (Β) (for example, having a carbon-carbon double bond) to start hardening (crosslinking reaction), usually using ultraviolet rays to generate radicals or cations (acids), especially Produce free radicals. When the oxime is a monovalent organic group having a carbon number of 2 to 10 at the terminal having an ethylenic carbon-carbon double bond, the fluorine-containing composition for forming a coating-type insulating film of the present invention can easily start a hardening reaction by the aforementioned active energy ray. Therefore, it is better. When the active energy ray is used in the ultraviolet range, the hardening initiator is exemplified as follows. The ethyl ketone is, for example, acetophenone, chloroacetophenone, diethoxyacetophenone, acetophenone or α-aminoacetophenone. The benzoquinone is, for example, a benzoin, a benzoin methyl ether, a benzoin ether, a quinone isopropyl ether, a benzoin isobutyl ether, a benzyl dimethyl ketal or the like. The benzophenone series is, for example, benzophenone, benzhydrylbenzoic acid, benzo-methyl-86-201229151 methyl benzoyl benzoate, 4-phenyl benzophenone, hydroxybenzophenone, hydroxy-propyl Benzobenzophenone, benzoated benzophenone, mirasolone, and the like. The thioxanthones are, for example, sevotonone, chlorothioxanthone, methylthioxanthone, diethylthioxanthone, dimethylthioxanthone and the like. Other examples include biphenyl hydrazine 'α-mercapto decyl ester, decyl phosphine oxide, glycolate, 3-ketocoumarin, 2-ethyl hydrazine, camphorquinone, hydrazine and the like. A photoinitiator such as an amine, an anthracene or a sul fine may be added as necessary. The initiator (photoacid generator) for cationic (acid) reactivity is, for example, the following exemplified. The key salt may, for example, be an iron iodide salt, a shovel salt, a money salt, a diazo salt, an ammonium salt, a pyridyl salt or the like. The chelating compound may, for example, be a β-ketoester, a P-sulfonyl group, or the like, an α·diazonium compound or the like. The sulfonic acid esters are, for example, an alkylsulfonate, a haloalkylsulfonate, an arylsulfonate or an imidosulfonate. Other examples include a sulfonium imine compound, a diazomethane compound, etc. The content of the hardening initiator in the fluorine-containing composition for forming a coating type insulating film of the present invention is a fluorine-containing polymer (Β). When the content of the crosslinking group and the compound (Α) have a crosslinkable group, 'based on the content of the crosslinking group, that is, the curing initiator used, the type of active energy ray, or the amount of irradiation energy (strength and time, etc.) Appropriate choice. For example, the curing initiator is preferably 100 parts by mass of the compound (Α) and the fluoropolymer (Β), preferably -87 to 201229151 〇.〇1 to 30 parts by mass. More preferably, it is 5 to 20 parts by mass, more preferably 0.1 to 10 parts by mass. The fluorine-containing composition for forming a coating-type insulating film of the present invention preferably contains a curing agent. In particular, when Y is a monovalent organic group having a carbon number of 2 to 10 carbon atoms having an ethylenic carbon-carbon double bond at the terminal, it is preferred to contain a curing agent. The curing agent preferably has one or more carbon-carbon unsaturated bonds and can be polymerized by a radical or an acid. Specifically, for example, a radical polymerizable monomer such as an acrylic monomer or a vinyl ether is used. A cationically polymerizable monomer such as a monomer. These monomers may be monofunctional having one carbon-carbon double bond or a polyfunctional monomer having two or more carbon-carbon double bonds. These so-called hardeners having a carbon-carbon unsaturated bond are reacted by a radical or cation which is produced by the reaction of an active energy ray-hardening initiator in the composition of the present invention with an active energy ray of light or the like. The crosslinker is obtained by copolymerization with a carbon-carbon double bond of a side chain of the fluoropolymer (B) in the composition of the present invention. Monofunctional acrylic monomers such as acrylic acid, acrylates, methacrylic acid, methacrylic acid esters, α-fluoroacrylic acid, α-fluoroacrylates, maleic acid, maleic anhydride, maleic acid esters And a (meth) acrylate having an epoxy group, a hydroxyl group, a carboxyl group or the like. In order to maintain the low refractive index of the cured product, an acrylate-based monomer having a fluoroalkyl group is preferred, for example, having the general formula:

X CH2=C-COOR fa (X system Η, CH3 or F, Rfa is a fluorine-containing casting base having a carbon number of 2 to 4 Å or a carbon number-88-201229151 2 to 100 fluoroalkyl group having an ether bond) The compound is preferred. Specifically, for example, there is [Chem. 76]

X X

I I CH2=C-COOCH2CH2-fCF2h-F, CH2=CCOOCH2CH2-&lt;CF2&gt;tF,

X X

I I CH2=C-COOCH2-(CF2h-H, CH2=CCOOCH2CF3,

X X

I I CH2=C-COOCH24CF2&gt;tH, CH2=CCOOCH2(CF2)6H, x cf3 X cf3 II II ch2=c-cooch, CH2=C-COOC-CF3,

I I cf3 cf3 X cf3

I I ch2=c-cooch2-(cf2&gt;tcf,

I cf3 and so on. The polyfunctional acrylic monomer is, for example, a compound obtained by substituting a hydroxyl group of a polyhydric alcohol such as a diol, a triol or a tetraol with an acrylate group, a methacrylate group or an α-fluoroacrylate group. Specifically, for example, 1,3-butanediol, 1,4-butanediol, 1,6-hexanediol, diethylene glycol, tripropylene glycol, neopentyl glycol, trimethylolpropane, A compound in which two or more hydroxyl groups of each of the polyols such as pentaerythritol and dipentaerythritol are substituted with any one of an acrylate group, a methacrylate group, and a ct-fluoroacrylate group. Further, it is also possible to use two or more hydroxyl groups substituted with a fluorine-containing alkyl group, a fluorine-containing alkyl group having an ether bond, a -89-201229151 fluorine-containing alkylene group or a fluorine-containing alkyl group-containing polyol having an ether bond. The polyfunctional acrylic monomer which is an acrylate group, a methacrylate group or an α·fluoroacrylate group is particularly preferable from the viewpoint of lowering the refractive index of the cured product. Specific examples, for example, [Chem. 77]

Rf-CH-CH2OH, Rf-CH2OCH-CH-CH2〇H

I I

OH OH (Rf is a fluorine-containing alkyl group having 1 to 40 carbon atoms),

R

I HOCH2C-COOCH2CH-R f ch2oh oh (Rf is a fluorine-containing alkyl group having 1 to 40 carbon atoms or a fluorine-containing alkyl group having an ether bond, R-form fluorene or an alkyl group having 1 to 3 carbon atoms), H〇-CH2 -R f '-CHoOH,

H〇-CH2CH-CH2-R f , -CH2-CHCH2OH, OH OH R I cch2oh I ch2oh

R

I H〇-CH2C-COOCH2CH-R f , -CHCH, OC ——

III II ch2oh oh o (Rf' is a fluorine-containing polybasic represented by a general formula of a fluorine-containing alkyl group having 1 to 40 carbon atoms or a fluorine-containing alkyl group having an ether bond, an alkyl group having a R-based carbon number of 3) It is preferred that the two or more hydroxyl groups of the alcohol are substituted with an acrylate group, a methacrylate group, or an α-fluoroacrylate group. Further, the above-exemplified monofunctional or polyfunctional acrylic monomers are preferably used as the hard-90-201229151 agent in the composition of the present invention, and among them, particularly a fluoroacrylate compound, since the curing reactivity is good, it is preferred. In the composition of the present invention, the amount of the active energy ray hardening initiator is added by the content of the carbon-carbon double bond in the fluoropolymer (Β), the presence or absence of the above-mentioned curing agent, or the amount of the curing agent used. The curing initiator, the type of active energy ray, or the amount of irradiation energy (strength and time) are appropriately selected. However, when no curing agent is used, it is preferably 〇 with respect to 100 parts by weight of the fluoropolymer (Β). The 〇 1 to 30 parts by weight, more preferably 0.05 to 20 parts by weight, most preferably 0.1 to 10 parts by weight. More specifically, for example, the content of the carbon-carbon double bond (molar number) contained in the fluoropolymer (Β) is preferably 0.05 to 50 mol%, more preferably 0.1 to 2 mol. %, optimally 0.5 to 1 0% by mole. When the hardener is used, the total number of moles of the carbon-carbon double bond content (molar number) contained in the fluoropolymer (Β) and the molar number of the carbon-carbon unsaturated bond of the hardener, It is preferably 0.05 to 50 mol%, more preferably 0.1 to 20 mol%, most preferably 0.5 to 10 mol%. When the curing agent is used, the amount of the curing agent to be used is appropriately selected depending on the hardness and refractive index of the object, the kind of the curing agent, the content of the curable group of the curable fluorine-containing polymer to be used, and the like, and is preferably relative to the curability. The fluoropolymer is generally from 1 to 80% by weight, preferably from 5 to 70% by weight, more preferably from 1 to 50% by weight. When the amount of the hardener added is too large, the refractive index tends to be high, which is not preferable. In addition to the above, the fluorine-containing composition for forming a coating-type insulating film of the present invention may contain various additives as necessary. -91 - 201229151 Additives include, for example, decane coupling agents, plasticizers, discoloration inhibitors, oxidation inhibitors, inorganic chelating agents, flat agents, viscosity modifiers, photosensitizers, moisture absorbers, pigments, dyes, reinforcing agents, and the like. Further, the fluorine-containing composition for forming a coating-type insulating film of the present invention may be a fine particle or an ultrafine particle containing an inorganic compound in order to increase the hardness of the insulating film or to control the refractive index. The inorganic compound fine particles are not particularly limited, and are preferably a compound having a refractive index of 丨.5 or less. Specifically, magnesium fluoride (refractive index 丨·3 8 ), cerium oxide (refractive index 1 · 4 6 ), aluminum fluoride (refractive index 1 · 3 3 to 1.39), calcium fluoride is preferred. (refractive index 1.44), lithium fluoride (refractive index 1.36 to 1.37), sodium fluoride (refractive index 1 · 3 2 ~ 1.34), cesium fluoride (refractive index 1.4) 5~1 . 5 0 ) and other fine particles. The particle diameter of the fine particles is preferably smaller than the wavelength of visible light in order to secure the transparency of the low refractive index material. Specifically, it is 300 nm or less, and particularly preferably i 〇〇 nm or less. The voids may be formed by fine particles or ultrafine particles of an inorganic compound. In other words, the film containing the inorganic compound or the ultrafine particles in the composition of the present invention can form a low refractive index lower than the refractive index of the film monomer by using the void. When the inorganic compound fine particles are used, it is preferably used in the form of an organosol which is dispersed in the organic dispersion medium in order to avoid dispersion stability in the composition and adhesion in the low refractive index material. In addition, in order to improve the dispersion stability of the inorganic compound fine particles and the adhesion in the low refractive index material, the surface of the inorganic fine particle compound may be modified with various coupling agents or the like in advance. Various coupling agents, for example, organic-92-201229151 substituted oxime compounds: aluminum, titanium, chromium, ruthenium or the like, metal alkoxides; salts of organic acids; coordination compounds combined with coordination compounds Wait. The fluorine-containing composition for forming a coating-type insulating film of the present invention may be a dispersion or a solution of a fluorine-containing polymer (B) or an additive in an organic solvent, and may have a lower temperature from the viewpoint of forming a uniform film. The film is preferably in the form of a homogeneous solution. When the fluorine-containing composition for forming a coating-type insulating film of the present invention is formed to have a film thickness of 1 to 5 μm, it is preferably a suitable viscosity, that is, a degree of 1 to i 〇 Cp. Therefore, the total mass of the fluorine-containing composition for forming a coating-type insulating film of the present invention is preferably from 10 to 100% by mass based on the total mass of the compound (A) and the fluoropolymer (B). More preferably 20 to 50% by mass. In the fluorine-containing composition for forming a coating-type insulating film of the present invention, for example, a fluorine-containing polymer (B) may be added to the liquid compound (A), that is, a curing initiator, a crosslinking agent, and the like may be added as necessary. The additive is produced by stirring and mixing as necessary. A method of applying the fluorine-containing composition for forming a coating-type insulating film of the present invention can be carried out by a known coating method. For example, there is a method in which a fluorine-containing composition for forming a coating-type insulating film is applied to a substrate, dried, and then baked if necessary. Specific examples of the coating method include a roll coating method, a gravure coating method, a micro gravure coating method, a flow coating method, a bar coating method, a spray coating method, a die coating method, and a spin coating method. The dip coating method, the slit coating method, and the like can be selected in consideration of the type, shape, productivity, controllability of the film thickness, and the like of the substrate. In the case of forming a gate insulating film of a thin film transistor, it is preferable to apply a fluorine-containing composition for coating a coating type insulating film by a slit coating method of -93-'ϊ=Γ 201229151. The fluorine-containing composition for forming a coating type insulating film of the present invention can be formed into an insulating film by crosslinking, for example, thermal crosslinking or photocrosslinking. The insulating film is applied to a substrate by applying a fluorine-containing composition for forming a coating-type insulating film of the present invention, and after drying, it is "fired and cross-linked, or irradiated with active energy such as ultraviolet rays, electron beams or radiation. The line is formed by photohardening. The fluorine-containing composition for forming a coating-type insulating film of the present invention can be used for various purposes. It is particularly suitable as a material for forming a large-area insulating film and forming an insulating film for use in applications requiring flexibility. For example, the use of the insulating film obtained by the composition of the present invention includes, for example, a multilayer printed wiring board interlayer insulating film, a light emitting diode element insulating film, a multilayer wafer interlayer insulating film, and the like. Further, it is suitable as an insulating film for a semiconductor element, and examples thereof include an interlayer insulating film, a passivation film, and a gate insulating film of a thin film transistor. Further, since the dielectric constant is low and the transparency in the visible light region is high, it is particularly suitable as a material for forming a gate insulating film of a thin film transistor. The insulating film of the present invention is formed of the above-described fluorine-containing composition for forming a coating-type insulating film. Since the fluorine-containing composition for forming a coating-type insulating film is formed, the insulating film is excellent in flexibility. In addition, heat resistance, low dielectric constant, and transparency are also excellent. The fluorine-containing composition for forming a coating-type insulating film of the present invention can form an insulating film, but is also excellent in low dielectric constant and transparency. Therefore, it is particularly suitable as a composition for forming an insulating film for forming a semiconductor element. The fluorine-containing composition for forming a coating-type insulating film of the present invention is preferably used for forming a gate insulating film of a thin film transistor. The coating type insulating film of the present invention is formed into a film having a high heat resistance, a transparency in a visible light region, a low dielectric constant and flexibility, and is a solvent for general use, and can be used for forming a film. In the case of a gate insulating film of a transistor, and being of a coating type, it is possible to achieve cost reduction and to easily produce a film having a large area. In the case of forming a gate insulating film for a thin film transistor, a more preferable configuration of the fluorine-containing composition for forming a coating-type insulating film of the present invention is as follows, but the present invention is not limited thereto. [Examples] (Example I) Organoquinone compound (A) component: Hydrolyzable condensed decane compound Fluoropolymer (B) component: a homopolymer composed of a structural unit L2 having a decane coupling group in a side chain, or a copolymer composed of a structural unit L2, a structural unit Μ, and a structural unit N (for example, a copolymer having a structure of (L2)-(Μ)-(Ν)) Solvent: a ketone solvent, an acetate solvent An alcohol solvent, a fluorine-containing alcohol solvent, or an aromatic solvent. The composition ratio is 1 part by mass (solid content) with respect to the component (A), and the component (B) is 1 to 50 parts by mass. Solvent: Appropriate amount (Example II) Organoquinone compound (A) Component: Hydrolyzed condensed decane compound Fluoropolymer (B) Component: H2 homopolymer having a radical polymerizable group -95- 201229151 from the side chain Or a copolymer composed of structural unit l2, structural unit M, and structural unit N (for example, a copolymer having a structure of (l2) _(M) _(N)) hardener (crosslinking agent): A compound hardening initiator having a radical crosslinkable group and a hydrolyzable sand chamber coupling group: an ultraviolet radical generating agent. Solvent: a ketone solvent, an acetate solvent, an alcohol solvent, a fluorine-containing alcohol solvent, or an aromatic solvent. The composition ratio is 1 part by mass to the (A) component (solid content)' (B) component is 1 to 50 parts by mass, the crosslinking agent is 0.1 to 10 parts by mass, and the initiator is 0.01 to 0.5 part by mass. The solvent is the necessary amount. The thin film electro-crystal system of the present invention is laminated in the order of the semiconductor layer, the gate insulating film, and the gate electrode layer. Since the above-mentioned gate insulating film is used for the thin film transistor of the present invention, it is excellent in flexibility, heat resistance, and transparency. The above-mentioned thin film transistor is suitable as a thin film transistor for a display device such as a liquid crystal display device or an organic electroluminescence display device. Moreover, since it is excellent in flexibility, it can be used as a thin film transistor used for, for example, a display device using a flexible substrate. Fig. 1 is a view showing an example of a reverse coplanar type thin film transistor. The thin film transistor 1 shown in Fig. 1 is formed by sequentially forming a gate insulating film 11 and a semiconductor layer 13 on a gate electrode layer 10, and a source/drain electrode 14 is formed sandwiching the oxide film 15. A passivation film 12 is formed on the source/drain electrodes 14. The thin film transistor of the present invention is not limited to such a back gate (Back Gate-96-201229151) type thin film transistor, and may be a top gate type thin film transistor. The semiconductor layer is a layer of an active layer of a thin film transistor and is composed of a semiconductor. The semiconductor may be a Group IV semiconductor such as ruthenium or iridium, or may be a III-V compound semiconductor such as gallium arsenide or gallium nitride or a π-νι compound semiconductor such as zinc oxide. It may also be an organic semiconductor such as pentacene or thiophene. From a practical point of view, it is preferably 矽. The semiconductor layer may be any of various semiconductors such as a single crystal, a polycrystal, or an amorphous material. The material for forming the gate electrode layer is not particularly limited, and a material which normally forms a gate electrode layer can be used. For example, a metal such as copper, aluminum, or gold can be used. Moreover, since the insulating film of the present invention has high transparency, it can be used as an insulating film in an LED element. [Examples] Next, the present invention will be described based on Synthesis Examples, Production Examples, Examples, and the like, but the present invention is not limited to the examples. The apparatus and measurement conditions used for physical property evaluation are as follows. (1) NMR: manufactured by BRUKER Co., Ltd. ^H-NMR measurement conditions: 300 MHz (tetramethyl decane = 0 ppm) 19F-NMR measurement conditions: 282 MHz (trichlorofluorotoluene = 0 ppm)

(2) IR analysis: FT-IR SPECTROMETER 1 760X manufactured by PERKIN ELMER Co., Ltd. (3) Weight average molecular weight Mw and number average molecular weight Μη: Determined by gel permeation chromatography (GPC). Shodex GPC-104 manufactured by Showa Denko Co., Ltd., using a pipe column made of Shodex (1 -97-201229151 GPC KF-604, 1 GPC KF-603, GPC KF-602 2 in-line) The solvent tetrahydrofuran (THF) was passed at a flow rate of 0.5 ml/min, and was calculated from the measured data. Synthesis Example 1 Synthesis of a homopolymer of a fluorine-containing allyl ether having an OH group In a glass four-necked flask equipped with a stirrer and a thermometer, perfluorogen (1, 1, 9, 9-tetrahydro-2,5-bistrifluoromethyl-3,6-dioxononenol) [78] ip. ch2=cfcf2ocfcf2ocfch2oh

21.2 g of a 8.0% by mass perfluorocarbon solution of CF 20 g and [H-(CF2CF2 ) 3-COO-]2, which was sufficiently substituted with nitrogen, and then stirred at 20 ° C for 24 hours under a nitrogen stream to form a solid having a high viscosity. . The obtained solid was dissolved in diethyl ether and poured into perfluorohexane, and separated and vacuum dried to obtain 17.6 g of a polymer. The polymer was subjected to 19F-NMR, W-NMR analysis, and IR analysis to obtain a fluoropolymer having only a structural unit of the above-mentioned fluorine-containing allyl ether and having a hydroxyl group at the terminal of the side chain. Further, the number average molecular weight measured by GPC analysis using a tetrahydrofuran (THF) solvent was 9000, and the weight average molecular weight was 22,000. Synthesis Example 2 (Synthesis of fluorine-containing curable polymer having α-fluoropropenyl group) In a 200 mL four-necked flask equipped with a reflux cooler 'temperature § ten, a carrying device, and a dropping funnel-98-201229151, Separately, diethyl ether (80 mL) of the individual polymer 5_〇g and pyridine 1.0 g containing the hydroxyfluorinated allyl ether obtained in Synthesis Example 1 was ice-cooled to 5 ° C or lower. The mixture was stirred under a nitrogen stream. At the same time, 1.2 g of α-fluoroacrylic acid fluoride:CH 2 =CFCOF was dissolved in 20 mL of diethyl ether dropwise at about 30 minutes. After the end of the dropping, the temperature was returned to room temperature, and stirring was continued for 4 hours. The ether solution after the reaction was placed in a separatory funnel, washed with water, washed with 2% aqueous hydrochloric acid, washed with 5% NaCl water, washed with water, and dried over anhydrous magnesium sulfate. The ether solution was found to contain a fluorinated allyl ether containing -CCF = CH2 group / a fluorine-containing allyl ether containing OH group = 5 0 / 50 mol% of a copolymer by l9F-NMR analysis. . Further, when it was applied to a NaCl plate and a cast film was formed at room temperature, the absorption of the carbon-carbon double bond was observed at 1661 (1), and the absorption of C = 0 group was observed at 1 770 CHT1. After adding methyl isobutyl ketone (MIBK) to the obtained fluorine-containing curable polymer (ether solution) having an α-fluoropropenyl group, the ether was distilled off by an evaporator to adjust the solid content concentration to 15.0% by mass. Example 3 (Synthesis of a fluorine-containing curable polymer having a triethoxydecyl group) 150 mL of MIBK was placed in a 300 mL four-necked flask equipped with a thermometer, a stirring device, and a dropping funnel, and the hydroxyl group contained in Synthesis Example 1 was contained. 20.0 g of a fluoroallyl ether alone polymer and 17.4 g of isocyanate propyl triethoxy decane 'cooled to 5 ° C or less. Stirring under a nitrogen stream, and adding 18 mg of dibutyltin lauryl, the temperature was returned to room temperature. Stirring was continued for another 4.0 hours. It was applied to a NaCl plate and cast at room temperature (cast) -99-201229151. It was confirmed by IR analysis that the absorption of the hydroxyl group disappeared and the reaction was completed. The reactant was directly used for the composition without purification. [79] -(CH2CF)n I cf3 ?F 3 i? CF2OCFCF2OCFCH2OCNH(CH2)3Si(OEt)3 Example 1 (Preparation of 40 wt% tetraethoxydecane (TEOS) / Synthesis Example 3 Polymer = 9/1 MIBK solution) Polymer MIBK of Synthesis Example 3. To 20 g of the solution, TEOS 36 g and MIBK 5 4 g were added to prepare a solution of the thermal hydrolysis type insulating film material with sufficient stirring. Example 2 (Preparation of 20 wt% tetraethoxy decane (TEOS) / Synthesis Example 3 polymer = 9/1 MIBK solution The above solution was prepared in the same manner as in Example 1 except that 10 g of the polymer MIBK solution of Synthesis Example 3, TEOS 18g, and MIBK72g were used. Example 3 (40 wt% tetraethoxy decane (TEOS) / Synthesis Example 3 Polymer = 4/1 MIBK Preparation of Solution) 40 g of the polymer MIBK solution of Synthesis Example 3, TEOS32g, and ΜIBK2 8 g The above solution was prepared in the same manner as in Example 1. Example 4 (20 wt% tetraethoxydecane (TEOS) / Synthesis Example 3 Polymer = 4 Preparation of MIBK solution of /1) 20 g of the polymer MIBK solution of Synthesis Example 3, TEOS 16 g, -100-201229151 MIBK64g were prepared in the same manner as in Example 1. Example 5 (20 wt% tetraethoxydecane (TEOS) / Synthesis Example 2 Polymer = 9/1 Preparation of MIBK Solution) Polymer MIBK solution of Synthesis Example 2 To 13.3 g, TEOS 17.5 g, tripropoxypropyl methacrylate 0.5 g, polymerization initiator Irgacure 907 (manufactured by Ciba Specialty Chemicals Inc.), O.lg, MIBK6 8.7 g, were added, and the mixture was stirred at room temperature to prepare ultraviolet rays. Thermal hydrolysis type insulating film material solution. Example 6 (Preparation of 20 wt% tetraethoxy decane (TEOS) / Synthesis Example 2 Polymer = 4/1 MIBK solution) 26.7 g of polymer MIBK solution of Synthesis Example 2, TEOS 15.5 g, tripropoxy group Propyl methacrylate 〇.5g, polymerization initiator irgacure

907 (manufactured by Ciba Specialty Chemicals Inc.) lg.lg, MIBK 5 7 · 3 g The above solution was prepared in the same manner as in Example 5. Test Example 1 The glass transition temperature (Tg) and the thermal decomposition temperature (Td) of the polymers obtained in each of Examples 1 to 6 were measured. The results are shown in Table 1. Glass transition temperature (Tg): Using a differential scanning calorimeter (manufactured by SEIKO Co., Ltd., RtG220), the temperature is raised from 30 ° C to 600 ° C under conditions of 〇 ° C / min _ cooling - temperature rise ( The second temperature rise is called the second back. The second point of the -101 - 201229151 is the intermediate point of the endothermic curve as T g ( °c ). Thermal decomposition temperature (Td): l 〇 ° C / min Using a TGA-50 type thermal scale manufactured by Shimadzu Corporation, the temperature at which the mass reduction starts at 1% is measured at the temperature increase rate. Test Example 2 Decay coefficient of elliptical thickness gauge) For each of the polymers obtained in each of Examples 1 to 6, the transmittance (and the refractive index) were measured by the following method using an (Ellipsometer). The results are shown in Table 1. Preparation of the sample: The coating is performed by rotating the wafer, drying and using a spin coater, and the respective compositions obtained in Examples 1 to 6 on the wafer substrate after 8 ,, firstly at 300 rpm for 3 seconds, followed by 4,000 rpm. After rounding for 20 seconds, the coating was adjusted to a film thickness of 1 to 2 μm, and a film was formed at the same time. The refractive index was measured: VASE was prepared, and the refractive index was measured using a spectroscopic elliptical thickness gauge (JAWoollam ellipsometer). k値 (deactivation coefficient and film thickness. -102- 201229151 [Table 1] Glass transition temperature (Tg ' °c) Thermal decomposition temperature (Td &gt; °C) Film thickness (μηι) k値 refractive index Example 1 Observation 310 0.8 0.000 1.418 Example 2 Unable to observe 311 1.5 0.000 1.413 Example 3 Unable to observe 310 1.2 0.000 "1.402 Example 4 Unable to observe 315 1.9 0.000 1.399 Example 5 Unable to observe 310 1.3 0.002 1.420 Example 6 Observation 307 1.5 0.005 1.406 [Industrial Applicability] The composition of the present invention can form a coating type insulating film, and can be applied, and is suitable for use in various applications. The insulating film of the area is formed of an insulating film for use in applications requiring flexibility, and is an insulating film for a semiconductor element, and is particularly suitable as a material for a gate insulating film of a stomach. [Simplified illustration] 1] Fig. 1 is a cross-sectional schematic view showing an example of a thin-grained skin of a coplanar type. [Main component symbol description] 1 = thin film transistor 1 0: gate electrode layer 1 1 : gate insulating film 1 2: passivation film 13: semiconductor layer -103 - 201229151 1 4 : source • drain electrode 1 5 : oxide film -104-

Claims (1)

201229151 VII. Patent application scope: 1. A fluorine-containing composition for forming a coating type insulating film, which is characterized by an organic cerium compound (A) and having the following formula (L): [Chemical Formula 1] - f CX^ ^—CX3·)— 1 (L) (CX4X5K~fC;0) (wherein X1 and X2 are the same or different from each other as H or F; X3 is H, F, CH3 or CF3; X4 and x5 are the same Or different, Η, F or CF3; Rf may have a fluorinated hydrocarbon group having a carbon number of 1 to 40 of a guanamine bond or a urea bond, or may have a guanamine bond, a carbonate bond, a urethane bond or 1 to 3 of the structural terminal of the fluorine-containing hydrocarbon group having an ether bond of 2 to 100 carbon atoms of the urea bond, Y (the γ-based terminal contains at least one monovalent of a hydrolyzable metal alkoxide moiety having 1 to 50 carbon atoms) a fluorine-containing hydrocarbon group substituted with an organic group or a monovalent organic group having a carbon number of 2 to 10 at the terminal having an ethylenic carbon-carbon double bond; a is an integer of 0 to 3; b and c are the same or different, and are 〇 Or 1) the structural unit of the fluoropolymer (B). 2. The fluorine-containing composition for forming a coating type insulating film according to the first aspect of the invention, wherein the organic cerium compound (A) is represented by the following formula (1): {Si(Ra)s(Rb)«(Rc) u(Rd)v(Re)w}n ( 1 ) (wherein, Ra, Rb, Rc and Rd are the same or different, and are hydrogen, halogen, alkoxy group having 1 to 1 carbon number, carbon number 1 An amino group of ～10, an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, a propyl group having 3 to 10 carbon atoms, or a glycidyl group having 3 to 10 carbon atoms, and the Re is the same or phase. Iso, -〇-, -NH-, - -105- 201229151 C = C-, or decane bond, s, t, u &amp; V is the same or different 'is 〇 or 1 ' w system 〇 ~ 4 integer η is 1 to 20, when η is 1, 's + t + u + v is 4, w is 0', and when η is 2 to 20, s + t + u + v are the same or different, which is 〇~4 ,w is the same or different, is 〇~4, w is a compound of 1 or more, and at least 2 Si systems are represented by Re bonds in a linear, ladder, cyclic, or heterocyclic form (A) 1 ). The fluorine-containing composition for forming a coating type insulating film according to the first or second aspect of the invention, wherein the organic ruthenium compound (A) is a tetraalkoxy decane. 4. The fluorine-containing composition for forming a coating-type insulating film according to the first, second, or third aspect of the invention, wherein the organic ruthenium is based on the total mass of the organic ruthenium compound (A) and the fluoropolymer (B). The compound (A) is 50% by mass or more. 5. The fluorine-containing composition for forming a coating-type insulating film according to claim 1, 2, 3 or 4 of the patent application, which contains an organic solvent. 6. The fluorine-containing composition for forming a coating type insulating film according to the first, second, third, fourth or fifth aspect of the patent application is used for forming a gate insulating film of a thin film transistor. 7. An insulating film 'characterized by a fluorine-containing composition for forming a coating type insulating film as disclosed in claim 1, 2, 3, 4' 5 or 6 of the patent application. 'The characteristic is to sequentially laminate the semiconductor layer, such as the insulating film of the seventh item of the patent application, and the gate electrode layer ° -106-