201228049 六、發明說明： 【發明所屬之技術領域】 本發明係有關於-紐光二極體封驗構與其槽型封裝導線 架之形成方法，尤其是-齡有被覆在導線絲面之高反射係數 材料之塑件的發光二極義裝結構與其槽龍裝導_之形成方 法。 【先前技術】 近年來’ 著發光二極體(Light emitting diode，LED)在照明領 域上的應用’生活中已經可以隨處看到各式各樣發光二極體商品 的應用·’例如：以發光二極體作為交通號誌、機車尾燈、汽車頭 燈、路燈、手電琦或疋電子產品之背光源(Backlight)。這些最終製 成的產品除了必要的發光二極體晶片製程之外，都必須經過一道 重要的「封裝」程序。 發光二極體晶片的封裝程序，目的在於提供發光二極體晶片 電、光、以及熱的必要支援。舉例而言，當發光二極體元件長時 間地暴路在大氣中，會受到水氣或其他外在環境中的化學物質譽 響而老化(age)，造成其特性的衰退。封膠製程(encapsulati〇n)用以 包覆住發光二極體晶片，則為一個有效隔絕大氣的方法。其次， 選用適合的基材(substrate)更可以提供發光二極體元件足夠的機械 保護，使得發光二極體元件的可靠度(reliability)大幅提升。目前常 見可用於發光二極體元件的基材，包括有導線架〇ead ftame)、金 屬基板、以及低溫共燒陶瓷基板等。 201228049 然而，眾所周知的晏 裝過程後，皮要求必 了上述之外，發光二極體晶片在封 方能達馳佳紅作=魏提供良⑽發光效率與發光亮度， 重要的—環，如何透=。—般而言，光學設計亦為封裝程序中 重點。習知遂有增加^裝結構有效地把光線導域為設計上的 極體晶片料㈣”屬導線架暴露之面積的做法，由於發光二 面積，以:光線導ΓΓ主要是透過金屬導線架作為其反射的 時，發光-_ 。叫’當《蜂齡屬祕架面積增加 時發先-極體元件自然具有較佳的發光亮度。 的同=Γ意的是’當金屬導線架必須暴露出的面積增加 對地減I、線架破封裝用的殼體所覆蓋住的面積，則勢必相 於先之’難殼體與金屬導線架之間的密合度將隨著 纽二的如而下降，影響到整體職之結構強度。其次，金 強度線架亦會因裸露的面積增加而使其結構亦親弱，降低結構 籲因此，如何解決習知封裝發光二極體晶片所產生的問題，並 且提供:縣具高朗亮度以及雜翻度之職方法與其封裝 ，…構’實為相關技術領域者目前迫切需要解決的問題。 【發明内容】 鑒於以上，本發明在於提供一種發光二極體封裝結構與其槽 型封裝導線架的形成方法，藉以解決習知存在的問題。 本發明係有關於-種發光二極體封裝結構之導線架的形成方 法’適於形成-槽魏裝躲架。此_成方法包括步驟：覆蓋 201228049 一光阻於銅材之至少一表面上；將覆蓋有光阻之鋼材置放於一光 罩下’並經由曝光使得光罩之影像成形於光阻上；移去未鍵結之 光阻；蝕刻未被光阻覆蓋之銅材，以形成穿透銅材之表面的至少 異徑孔，除去光阻，並且電链銅材，以形成一導線架；以及， 於該導線架上被覆至少一高反射係數材料之塑件，且塑件係填充 異徑孔’以形成槽型封裝導線架。 根據本發明之一實施例，其中異徑孔可以是僅穿透銅材之表 面的半#刻孔，或者是貫穿銅材之全蝕刻孔。 根據本發明之一實施例，其中塑件之材質可以是高反射係數 之環氧樹脂。 根據本發明之一實施例，其中塑件係部份填充於半蝕刻孔。 根據本發明之一實施例’此種形成方法另包括步驟：電性連 接一發光二極體晶片於槽型封裝導線架；以及提供一封膠層封裝 發光一極體晶片與槽型封裝導線架，以形成一發光二極體封裝結 構。 本發明另有關於一種發光二極體封裝結構，此種發光二極體 封裝結構包括：一發光二極體晶片、一導線架、至少一塑件以及 一封膠層。導線架具有供發光二極體晶片設置的一表面，以及穿 透該表面的至少一異徑孔。塑件係藉由填充異徑孔，被覆於導線 架上。封膠層用以封裝發光二極體晶片與導線架，以形成發光二 極體封裝結構。其中，塑件之材質係為高反射係數材料，發光二 極體晶片所發射出之光線係藉由塑件作為其光線之反射面積。 201228049 根據本發明之一實施例，其中塑件包括佈植於導線架側邊之 擔牆以及配置於導線架中央本體之反射體。 本發明更有關於一種槽型封裝導線架，包括：一導線架以及 至少-塑件。導線架具有穿透其表面的至少—異徑孔，塑件係被 覆於導線架上，並且填充異觀。其巾，餅之材質係為高反射 係數材料’塑件係部分㈣如)且錯位地填充於異徑孔，以增加導 線架與餅之間的結合率’並雜止導線架於其表面膠現象。 是以’本㈣提$之發光二極贿裝結構與其觀封裝導線 架的形成方法，係藉由具有高反雜數材料之餅，增加發光二 極體晶片射出之光線的反射面積，藉此提高發光二極體封裝結構 之發光亮度。 ’、人本㈣提發光二極體職結構與其槽贿裝導線 架的形成方法’更透過塑件填充導線架上的異徑孔，增加二者之 間的密合度。於此’本發出之發光二極體封裝結構不僅具有 較佳之結構強度，更在無形中提升了職結構於後續測試中之可 以上有關於本發明的内容說明，與以下的實施方式係用以示 範與解釋本發_精神與原理，並域供本發明的專射請範圍 1進-步的解釋。有關本發明的特徵、實作與功效，兹配合圖式 作較佳實施例詳細說明如下。 【實施方式】 以下在實施方式中詳細敘述本發明之詳細特徵以及優點，其 201228049 内容足以使任何熟習相關技藝者了解本發明之技姻容並據 施，且根據本說明書所揭露之内容、中請專利範圍及圖式，任和 熱習相關技藝者可輕易地理解本發明相關之目的及優點。可 第1圖」係為根據本發明實施例之發光二極體封裝結構的 形成方法之麵流程圖，此獅成方法主要包括以下步驟：、 步驟S102 :覆蓋一光阻於銅材之至少一表面上； 步驟隨：將覆蓋有光阻之銅材置放於一光罩下，並經由曝 光使得該光罩之影像成形於光阻上； h 步驟S106 ·移去未鍵結之光阻； 步驟S108 :钱刻未被光阻覆蓋之銅材，以形成穿透銅材之表 面的至少一異徑孔； 步驟S110 :除去光阻，並且電鍍銅材，以形成一導線架； 步驟S112 :於導線架上被覆至少一高反射係數材料之塑件， 且塑件係填充異徑孔，以形成槽型封裝導線架； 步驟S114 :電性連接發光二極體晶片於槽型封裝導線架；以 及 步驟S116 :提供一封膠層封裝發光二極體晶片與槽型封裝導 線架，以形成發光二極體封裝結構。 其中’步驟S102至步驟S112係為本發明提出之發光二極體 封裝結構之導線架的形成方法，其係用以形成「第4A圖」所示之 槽型封裝導線架(Cavity floating non-lead frame) 110。 本發明提出之發光二極體封裝結構，可以是但不限於封裝無 201228049 引腳扁平(Quad Flat Non Leads，QFN)之發光二極體晶片，此種封 裝結構或可稱為槽型封裝結構(Cavity fl〇ating n〇n_lead)。本發明提 出之槽型封裝結構不僅可具有較佳的發光亮度，並可同時增加其 封裝後之整體結構強度。有關本發明之技術内容，請一併參閱「第 2A圖」至「第2H圖」、「第3圖」與「第4A圖」至「第4D圖」， 茲詳細說明如下。201228049 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a method for forming a neo-diode sealing structure and a slot-type package lead frame, in particular, a high reflection coefficient of the wire surface coated with the wire The method of forming the light-emitting diode of the plastic part of the material and the method of forming the slotted dragon. [Prior Art] In recent years, 'the application of light emitting diodes (LEDs) in the field of lighting' has been widely used in life to see the application of various kinds of light-emitting diodes. 'For example: to shine The diode is used as a backlight for traffic signs, locomotive taillights, car headlights, street lights, flashlights or electronic products. These final products must undergo an important "packaging" process in addition to the necessary LED manufacturing process. The package procedure for a light-emitting diode wafer is intended to provide the necessary support for the light, light, and heat of the light-emitting diode wafer. For example, when a light-emitting diode element is violently exposed to the atmosphere for a long time, it may be aged by a chemical substance in moisture or other external environment, causing deterioration of its characteristics. The encapsulation process (encapsulation) is used to coat the LED chip, which is a method for effectively isolating the atmosphere. Secondly, the selection of a suitable substrate can provide sufficient mechanical protection of the light-emitting diode component, so that the reliability of the light-emitting diode component is greatly improved. Substrates that can be used for light-emitting diode elements are commonly found, including lead frames, metal substrates, and low temperature co-fired ceramic substrates. 201228049 However, after the well-known armoring process, the skin requirements must be the above. The LED chip can be used in the sealing of the radix, and the laser can be used to achieve the luminous efficiency and brightness. =. In general, optical design is also the focus of the packaging process. I know that there is an increase in the structure to effectively illuminate the light into the design of the polar wafer material (four) "the area exposed by the lead frame. Because of the two areas of light, the light guide is mainly through the metal lead frame. When it is reflected, the illuminating - _ is called 'when the area of the bee genus is increased, the first element - the polar element naturally has a better illuminating brightness. The same = Γ ' is when the metal lead frame must be exposed The area increased by the area of the ground reduction I and the housing covered by the wire frame is inconsistent with the first degree. The tightness between the hard shell and the metal lead frame will decrease with the New Zealand. It affects the structural strength of the overall job. Secondly, the gold strength wireframe will also weaken its structure due to the increased exposed area, thus reducing the structure. Therefore, how to solve the problems caused by the conventional packaged light-emitting diode chip, Moreover, it is provided that the county has a high brightness and a versatile method and its packaging, and the present invention is an urgent problem to be solved by the related art. [Invention] In view of the above, the present invention provides a luminescence. The present invention relates to a method for forming a lead frame of a light-emitting diode package structure, which is suitable for forming a groove-shaped package. The method comprises the steps of: covering 201228049 a photoresist on at least one surface of the copper material; placing the steel covered with the photoresist under a photomask and forming an image of the photomask to the photoresist via exposure Removing the unbonded photoresist; etching the copper material not covered by the photoresist to form at least a different diameter hole penetrating the surface of the copper material, removing the photoresist, and electrically connecting the copper material to form a lead frame And covering the lead frame with at least one plastic component of high reflectance material, and the plastic component is filled with the different diameter hole ' to form a slotted package lead frame. According to an embodiment of the invention, the different diameter hole may be A semi-perforated hole that penetrates only the surface of the copper material, or a fully etched hole that penetrates the copper material. According to an embodiment of the present invention, the material of the plastic part may be an epoxy resin having a high reflection coefficient. An embodiment, The medium-plastic part is partially filled in the half-etched hole. According to an embodiment of the invention, the forming method further comprises the steps of: electrically connecting a light-emitting diode chip to the slot-type package lead frame; and providing a glue layer The invention discloses a light emitting diode package structure, and the light emitting diode package structure comprises: a light emitting diode a body wafer, a lead frame, at least one plastic part, and a glue layer. The lead frame has a surface for the LED chip and at least one different diameter hole penetrating the surface. The hole is covered on the lead frame, and the sealing layer is used for encapsulating the LED chip and the lead frame to form a light emitting diode package structure, wherein the material of the plastic part is a high reflection coefficient material, and the light emitting diode The light emitted by the wafer is made up of plastic parts as the reflective area of its light. 201228049 According to an embodiment of the invention, the plastic part comprises a support wall implanted on the side of the lead frame and a reflector disposed on the central body of the lead frame. More particularly, the invention relates to a slotted package leadframe comprising: a leadframe and at least a plastic part. The lead frame has at least a different diameter hole penetrating the surface thereof, and the plastic part is coated on the lead frame and filled with an invisible shape. The towel, the material of the cake is a high reflection coefficient material 'plastic parts part (4)) and is misplaced in the different diameter hole to increase the bonding ratio between the lead frame and the cake 'and the lead frame is glued on the surface thereof phenomenon. The method for forming a light-emitting two-pole bristle structure and a view-packing lead frame of the present invention is to increase the reflection area of the light emitted from the light-emitting diode wafer by using a cake having a high anti-heterogeneous material. Improve the brightness of the light emitting diode package structure. </ br> </ br> </ br> </ br> <br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br> In this case, the light-emitting diode package structure of the present invention not only has better structural strength, but also enhances the structure of the structure in the invisible test, and can be described in the following, and the following embodiments are used. Demonstrate and explain the _ spirit and principle, and the domain for the special shot of the invention, please explain the range 1 step-by-step. The features, implementations, and utilities of the present invention are described in detail with reference to the preferred embodiments. [Embodiment] Hereinafter, the detailed features and advantages of the present invention are described in detail in the embodiments, and the contents of 201228049 are sufficient for any skilled person to understand the skill of the present invention and according to the contents disclosed in the present specification. The related objects and advantages of the present invention can be easily understood by those skilled in the art and the related art. 1 is a flow chart of a method for forming a light emitting diode package structure according to an embodiment of the present invention. The lion forming method mainly includes the following steps: Step S102: covering at least one photoresist in a copper material On the surface; the step of: placing the photoresist covered with copper under a mask, and exposing the image of the mask to the photoresist; h step S106 · removing the unbonded photoresist; Step S108: engraving the copper material not covered by the photoresist to form at least one different diameter hole penetrating the surface of the copper material; Step S110: removing the photoresist and plating the copper material to form a lead frame; Step S112: The lead frame is coated with at least one plastic component with high reflection coefficient material, and the plastic component is filled with a different diameter hole to form a slotted package lead frame; Step S114: electrically connecting the light emitting diode chip to the slot type package lead frame; And step S116: providing a glue layer package light emitting diode chip and a slot package lead frame to form a light emitting diode package structure. The step S102 to the step S112 are the method for forming the lead frame of the LED package structure proposed by the present invention, which is used for forming the slot type package lead frame shown in FIG. 4A (Cavity floating non-lead). Frame) 110. The LED package structure of the present invention may be, but is not limited to, a packaged LED flat chip without a 2012 Flat (Quad Flat Non Leads, QFN) package. The package structure may be referred to as a trench package structure ( Cavity fl〇ating n〇n_lead). The trench package structure proposed by the present invention not only has better luminance of illumination, but also increases the overall structural strength of the package. Please refer to "2A" to "2H", "3" and "4A" to "4D" for details of the technical contents of the present invention.
銅材ίο係為發光二極體封裝結構之基材，其可以是C194之 銅(〇〇基板。光阻20係覆蓋於銅材1〇的一上表自12與一下表面 14上。其中，光阻20亦可選擇性地僅覆蓋於銅材1〇之單一表面， 光阻20所覆蓋之表面數量並義以限定本發明之發明範圍。設計 者當可根據實際產品需求，自行決定細Μ覆蓋於銅材心表 面數量與覆蓋位置。唯本發明係以細2G覆蓋於鋪ig的上表 面12與下表面14，作為娜本發明技術之—實絲例而已。 光罩3〇係覆蓋於光阻20之上，換言之，光罩3〇係完全包 住銅材10與其上下之光阻2〇。接著，如「第圖」所示，「 2C圖」之結構係曝光於一紫外_tra_vi〇ietii幽，下 令光罩30之影像成形在光阻2〇上。其中，光阻2()之種類可以; 正向光阻（positive photo_resist)或是負向光阻抓 細ο·，，使得絲2G巾簡物卜、_是未簡到紫制 的部分，可藉_影液之㈣，而具有與光罩3卜致的圖像。 接著’請參閱「第2E圖」至「第2H圖」，「第2D圖」之么 構續透過化學_壯：_、氣_ ’洗絲骑鍵結反肩 201228049 的光阻20。然後，再針對未被光阻2〇覆蓋之銅材ι〇進行姓刻步 驟，以形成穿透銅材10的至少一異徑孔。最後，化學藥劑再洗去 所有覆蓋於銅材U)上的光阻2〇，並且針對該裸露出的銅材1〇進 行電鑛，以形成如「第3圖」所示之導線架1〇〇。 值得-提岐，銅材10上的異徑孔可以是僅穿透銅材ι〇之 單一表面的半餘刻孔102，或者是完全貫穿銅材10之上表面12 與下表面14的全姓刻孔104。其中，異徑孔的數量與其配置位置 亦非用以限定本發明之發明範圍，設計者可根據實際配置的光罩 3〇之位置與光阻2〇之種類，決定異徑孔係為半钱刻孔1〇2或是全 蝕刻孔104。 因此，請參見「第4A圖」，係為根據本發明實施例之槽型封 裝導線架之結構示意圖，其中塑件2〇〇係以射出成形(m〇iding)的 方式，藉由填充該些異徑孔(即半钱刻孔1〇2與全钮刻孔謝)而被 覆於導線架應上。塑件並不以射出成形的方式為限。於本 發明之其他實施射，餅亦可透過沖塵、倾等方式成形 於導線架100上。根據本發明之實施例，塑件包括有佈植於 導線架100 一側邊的撞牆202(barrier)以及配置於導線架⑽中央 本體上之反射體2G4。塑件2GG主要係由高反射係數之材料製成， _而言’該具有高反射係數之材料可以是但不限於高反射係數 的環氧樹脂。於此，具有侧異徑孔之導線架100與被覆於導線 架100上之塑件·係一併形成「第4A圖」所示之槽型封裝導線 架 110。 201228049 值得注意的是’反射體綱中填合半烟孔脱的部分，係 為部分(partial)且錯位地填充於半餘刻孔1〇2。於此，本發明提出 的槽型封裝導線架1H)可有效防止導線架謂表面膠體的溢膠現 象。其次，塑件200與導線架1〇〇之間的異質結合，更可藉此錯 位且部分填充之關係，而增加二者之間的結合率，提高槽型封裝 導線架110之結構強度。 最後，如「第4B圖」至「第4D圖」所示，發光二極體晶片 鲁300可經由打線接合(wire b〇nding)或倒裝晶片安裝(打中冰也 bonding)於槽型封裝導線架110之上，並且透過封膠層4〇〇封裝發 光二極體晶片300與槽型封裝導線架11〇，再透過切割(saw)之後， 形成如「第4D圖」之發光二極體封裝結構。 由於塑件200之材料係為高反射係數材質，因此，發光二極 體晶片300發射出之光線，除了可藉由未被塑件2〇〇覆蓋住的導 線架100之外，更可藉由被覆於導線架1〇〇表面上的塑件2〇〇作 •為其光線之反射面積。於此，本發明提出之發光二極體封裝結構， 即透過具有高反射係數的塑件200，增力口其光線之反射面積，以大 幅增加發光二極體之發光亮度。 其次’由於塑件200係填充導線架1〇〇上的全触刻孔1〇4，因 此，本發明提出之發光二極體封裝結構更可藉此增強塑件2〇〇與 導線架100之間的密合度，並且據以增加發光二極體封裝結構之 結構強度。除此之外，由於全蝕刻孔104係貫穿導線架1〇〇，並且 為大致呈彎曲形狀的異徑孔，因此，全钕刻孔1〇4之内面曲徑可 201228049 有效地延長外界水氣進入封裝體之路徑。藉此’本發明提出的發 光二極體封裝結構，更具有避免水氣滲入之功效，以增加封裝結 構之可靠度。 本發明提出之發光二極體封裝結構與其槽型封裝導線架之形 成方法，並不以形成單一發光二極體之封裝體結構為限。換言之， 本發明提出之職方法亦可·於陣列製作，以形成陣列式槽型 封裝導線架(Matrix Cavity floating ηοη· frame)，並藉此製作多 個發光二極體封裝結構(或稱陣列式槽型封裝結構)，符合現今市場 大量生產之產業趨勢。 導線架的形成方法， 不僅可有效增加發光二極體之發光亮度、達The copper material ίο is a substrate of a light-emitting diode package structure, which may be a C194 copper (a germanium substrate. The photoresist 20 is covered on the upper surface of the copper material 1 from the upper surface 14 and the lower surface 14). The photoresist 20 can also selectively cover only a single surface of the copper material, and the number of surfaces covered by the photoresist 20 is limited to define the scope of the invention. The designer can decide according to the actual product requirements. Covering the surface number and covering position of the copper core. The present invention covers the upper surface 12 and the lower surface 14 of the ig with a thin 2G, as an example of the invention of the present invention. The mask 3 is covered by Above the photoresist 20, in other words, the photomask 3 is completely encased in the copper material 10 and its upper and lower photoresists. Then, as shown in the "figure", the structure of the "2C diagram" is exposed to an ultraviolet _tra_vi 〇ietii sec, ordered the image of the reticle 30 to be formed on the photoresist 2 。. Among them, the type of the photoresist 2 () can be; the positive photoresist (positive photo_resist) or the negative photoresist scratches ο, Silk 2G towel simple object, _ is not simple to purple part, you can borrow _ shadow liquid (four), and have The image of the cover 3 is followed. 'Please refer to the 2E figure to the 2H figure. The structure of the 2D figure continues through the chemical _ _: _, gas _ 'washing the wire to tie the back shoulder The photoresist of 201228049. Then, the copper material 未被 which is not covered by the photoresist 2〇 is subjected to a surname step to form at least one different diameter hole penetrating the copper material 10. Finally, the chemical agent washes away all the coverage. The photoresist on the copper material U) was 2 〇, and the bare copper material 1 was subjected to electric ore to form a lead frame 1 as shown in "Fig. 3". It is worthwhile to mention that the different diameter hole on the copper material 10 may be a semi-remaining hole 102 that penetrates only a single surface of the copper material, or a full surname that completely penetrates the upper surface 12 and the lower surface 14 of the copper material 10. Engraved hole 104. Wherein, the number of the different diameter holes and the arrangement position thereof are not used to limit the scope of the invention, and the designer can determine the different diameter hole system according to the actual arrangement of the position of the mask 3〇 and the type of the photoresist 2〇. Engraved holes 1〇2 or fully etched holes 104. Therefore, please refer to FIG. 4A, which is a schematic structural view of a slot-type package lead frame according to an embodiment of the present invention, wherein the plastic part 2 is formed by injection molding. The different diameter holes (that is, half of the money hole 1〇2 and the full button hole) are covered on the lead frame. Plastic parts are not limited to injection molding. In other embodiments of the present invention, the cake may also be formed on the lead frame 100 by dusting, tilting, or the like. In accordance with an embodiment of the present invention, the plastic member includes a barrier wall 202 that is implanted on one side of the leadframe 100 and a reflector 2G4 that is disposed on the central body of the leadframe (10). The plastic part 2GG is mainly made of a material having a high reflection coefficient, and the material having a high reflection coefficient may be, but not limited to, a high reflection coefficient epoxy resin. Here, the lead frame 100 having the side different diameter hole and the plastic part coated on the lead frame 100 form the groove type package lead frame 110 shown in Fig. 4A. 201228049 It is worth noting that the part of the reflector that fills the half-smoke hole is partially and misplaced in the semi-remaining hole 1〇2. Therefore, the slot type package lead frame 1H) proposed by the present invention can effectively prevent the lead frame from being overflowing of the surface colloid. Secondly, the heterogeneous combination between the plastic part 200 and the lead frame 1 更 can further offset and partially fill the relationship, thereby increasing the bonding ratio between the two and improving the structural strength of the slot-type package lead frame 110. Finally, as shown in "4B" to "4D", the LED chip 300 can be wired in a trench package by wire bonding or flip chip bonding. Above the lead frame 110, and encapsulating the LED array 300 and the slot package lead frame 11 through the encapsulation layer 4, and then passing through the saw, forming a light-emitting diode such as "4D" Package structure. Since the material of the plastic member 200 is a high reflection coefficient material, the light emitted from the LED chip 300 can be separated by the lead frame 100 which is not covered by the plastic member 2 The plastic part 2 coated on the surface of the lead frame 1 is used as the reflective area of the light. Therefore, the LED package structure of the present invention, that is, through the plastic component 200 having a high reflection coefficient, the light-reflecting area of the light-increasing port increases the light-emitting brightness of the light-emitting diode. Secondly, since the plastic part 200 is filled with the full-touch hole 1〇4 on the lead frame 1 , the light-emitting diode package structure of the present invention can further enhance the plastic part 2 and the lead frame 100. The degree of closeness and the structural strength of the light emitting diode package structure is increased. In addition, since the fully etched hole 104 penetrates the lead frame 1 〇〇 and is a substantially curved shape of the different diameter hole, the inner surface of the full etched hole 1 〇 4 can be used to effectively extend the external moisture. Enter the path of the package. Therefore, the light-emitting diode package structure proposed by the present invention has the effect of avoiding moisture infiltration to increase the reliability of the package structure. The method for forming the light-emitting diode package structure and the slot-type package lead frame of the present invention is not limited to the package structure for forming a single light-emitting diode. In other words, the method of the present invention can also be fabricated in an array to form an array of cavity-type packaged lead frames (Matrix Cavity floating ηοη·frame), and thereby fabricating a plurality of light-emitting diode package structures (or arrays) The groove type package structure) is in line with the industrial trend of mass production in the market today. The method of forming the lead frame can not only effectively increase the brightness of the light-emitting diode,
【圖式簡單說明】 综上所述，本發明提出的贱二極體封裝結構與其槽型封裝BRIEF DESCRIPTION OF THE DRAWINGS In summary, the present invention provides a germanium diode package structure and a trench package thereof.
」係為根縣發日轉_之發紅極㈣裝結構之 ’自銅材形成導線架之流程示意圖。 201228049 導線架之結構示意圖。 「第4A圖」至「第4D圖」係為根據本發明實施例之發光二 極體封裝結構，自槽型封裝導線架形成封裝結構之流程示意圖。The system is a schematic diagram of the process of forming a lead frame from a copper material. 201228049 The structure of the lead frame. The "4A" to "4D" diagrams are schematic diagrams showing the process of forming a package structure from the slot type package lead frame in accordance with the LED package structure according to the embodiment of the present invention.
【主要元件符號說明】 10 銅材 12 上表面 14 下表面 20 光阻 30 光罩 100 . 導線架 102 半蝕刻孔 104 全钱刻孔 110 槽型封裝導線架 200 塑件 202 擋牆 204 反射體 300 發光二極體晶片 400 封膠層 13[Main component symbol description] 10 Copper material 12 Upper surface 14 Lower surface 20 Photoresist 30 Photomask 100. Lead frame 102 Half-etched hole 104 Full money hole 110 Grooved package lead frame 200 Plastic part 202 Retaining wall 204 Reflector 300 Light-emitting diode wafer 400 sealing layer 13