201226897 六、發明說明： 【發明所屬之技術領域】 本發明係一種氧化鎳酸鹼值感測器及其製造方法，尤指一種應用於生 醫感測之領域，可即時監控環境中之酸鹼值，亦可進一步於感測區域固定 生物分子’在與其他物質發生特異性的生化反應後，訊息可即時定量，結 合訊號傳送、訊號處理與運算於一體之氧化鎳酸鹼值感測器。 【先前技術】 ® 進行離子感測時，傳統上都採用玻璃電極作為量測電極，然玻璃電極 具有無法微量化量測、易損毁與攜帶不便等缺點，故玻璃電極之使用範圍 遭到限制。 1970年P. Bergveld即於正EE期刊中發表離子感測場效電晶體 (Ion-Sensitive Field Effect Transistor，ISFET)，該元件具有酸鹼檢測能力、 可結合CMOS標準製程、高輸入阻抗與低輸出阻抗、微小化以進行微量溶 ^ 液量測、響應快速等優點，由於離子感測場效電晶體具有以上之特性，近 年來已被大里研究及探討，並應用於微小化酸驗感測器與生醫感測元件等 領域。 而離子感測場效電晶體的主要工作原理是將金氧半場效電晶體 _ ( Metal_0xlde-semicon(iuctor Field Effect Transistor, MOSFET )的金屬閘極 去除，再將金氧半場效電晶體放置於水溶液中，使去除閘極金屬後所暴露 之的離子感測膜和水溶液接觸，藉此，即可以用於感測水溶液對二氧化矽 表面產生之介面電位，以達到感測水溶液離子之濃度的目的，其具有離子 選擇電極（Ion selective electrode)的功能，也同時具有場效電晶體的特性。 201226897 其中，最常使用的離子感測膜有二氧化石夕（si02)、氮化石夕（Si3N4)、氧化 钽（Ta20小氮她（齒）及氧化銘（A12〇3)等材科。然，上述材料不 是需額外製程就是具有不佳的感測線性度及光穩定度，尤其在長時間操作 下’容易受到背景光源的影響。 有鏗於上述缺失，R D. Batista et al在2〇〇5年即發表一種氧化辞⑵〇) 酸鹼值感，其為—延伸鋼極場效電晶體（恤浙⑽祕随⑽ Tmnsistor，EGFET)結構，主要係保留金氧半場效電晶體製程中之金屬閘 極，並自金氧半場效電晶體之難處延伸有—離子感測膜，二者之間則係 藉由導線連接’藉由氧化辞感測膜來和水溶液接觸以進行感測。然，此 種酸驗值_難敏度卻；^符合目前產紅的要求。 疋、要如何解決上述制之問題與缺失，即為本發明之發明人與從 事此行業之細麵所亟欲研究改善之方向所在者。 【發明内容】 故，本創作之創作人有鑑於上述缺失，乃搜集相_，經由多方評 1 及考量，如從事槪行«積之多年經驗，經由不斷試作及修改，始 „又。十出此種應用於生醫侧之領域，可即時監控環境中之缝值，亦可進 感龜域固定生物分子，在與其他㈣發生特異㈣生化反應後， U即時定量，結合訊號傳送 — 感測器發日辑利者。 4里與私於—體之氧化錄酸驗值 本發明之主要目的在於提供一罝 Μ夕“有低成本、製程㈣、高穩定性，有 極佳之可碰及咖度紐點之酸鹼值感測器。 為了達到上述之目的，本發明係 '一、延伸式閘極場效電晶體結構，係包f 4 201226897 括有： 一金氧半場效電晶體；以及 一延伸式閘極感測元件，包括有； 一基底； 一導電層，係設置於該基底上； 一氧化鎳層，係設置於該導電層之上； 一導線，係連接於該導電層與該金氧半場效電晶體；以及 一絕緣層’係包覆於該基底、導電層與氧化錦層，並露出該氧化 錄層形成一感測區。 本發明之-人要目的在於提供—種具有低成本、製程簡易、高穩定性，有 極佳之可靠度及耐用度等優點之酸紐制n製造方法。 為了達到上述之目的，本發明係為—延伸式閘極場效電晶體結構，製造 方法係依照下列步驟完成： 形成一基底；201226897 VI. Description of the Invention: [Technical Field] The present invention relates to a nickel oxide base value sensor and a method of manufacturing the same, and more particularly to a field for biomedical sensing, which can instantly monitor the acid and alkali in the environment. The value can be further fixed in the sensing area. After the biochemical reaction with other substances is carried out, the information can be instantly quantified, combined with signal transmission, signal processing and calculation, the nickel oxide base value sensor. [Prior Art] ® When using ion sensing, glass electrodes have traditionally been used as measuring electrodes. However, glass electrodes have the disadvantages of being incapable of micro-measurement, damage and inconvenience, so the use of glass electrodes is limited. In 1970, P. Bergveld published the Ion-Sensitive Field Effect Transistor (ISFET) in the EE journal. This device has acid-base detection capability, can be combined with CMOS standard process, high input impedance and low output. Impedance, miniaturization for the measurement of trace solution, rapid response, etc., due to the above characteristics of ion-sensing field-effect transistors, it has been researched and discussed by Dali in recent years, and applied to miniaturized acid detectors. In areas such as biomedical sensing components. The main working principle of the ion-sensing field-effect transistor is to remove the metal gate of the Metal Oxide Field Effect Transistor (MOSFET), and then place the gold oxide half field effect transistor in the aqueous solution. The ion sensing film exposed after removing the gate metal is contacted with the aqueous solution, thereby being used for sensing the interface potential generated by the aqueous solution on the surface of the ceria to achieve the purpose of sensing the concentration of the aqueous solution ions. It has the function of an ion selective electrode and also has the characteristics of a field effect transistor. 201226897 Among them, the most commonly used ion sensing membranes are SiO2 (si02) and Nitride Xi (N3N4). , yttrium oxide (Ta20 small nitrogen her (tooth) and oxidation Ming (A12 〇 3) and other materials. However, the above materials do not require additional process or have poor sensing linearity and light stability, especially in long-term operation The next 'is easily affected by the background light source. In contrast to the above-mentioned deletions, R D. Batista et al published a oxidative term (2) 〇) in the 2nd and 5th years, the acid-base sense, which is - extension The structure of the field-effect transistor (T-Shirt (10) Tmnsistor, EGFET) mainly preserves the metal gate in the gold-oxygen half-field effect transistor process, and extends from the difficulty of the gold-oxygen half-field effect transistor. The film is connected to the aqueous solution by oxidizing the sensation film by means of a wire connection for sensing. However, the acidity value of the acid is not sensible;疋 要 要 要 要 要 要 要 要 要 要 要 要 要 要 要 要 要 要 要 要 要 要 要 要 要 要 要 要 要 要 要 要 要 要 要 要 要 要 要 要 要 要 要 要 要 要 要 要 要 【 Missing is the collection of phase _, through multi-party evaluation 1 and considerations, such as engaging in the experience of many years of experience, through continuous trials and modifications, the beginning of again. Ten out of this application in the field of biomedical side, real-time monitoring of the environment The value of the seam can also be used to fix the biomolecule in the turtle domain. After the specific (four) biochemical reaction with the other (4), U instant quantitative, combined with the signal transmission - the sensor is issued by the Japanese. 4 and private - body Oxidation acid test The main purpose of the invention is to provide a pH sensor that has low cost, process (four), high stability, and excellent touchability and latitude. In order to achieve the above object, the present invention is 'I. Extended gate field effect transistor structure, the package f 4 201226897 includes: a gold oxide half field effect transistor; and an extended gate sensing element, including; a substrate; a conductive layer, Provided on the substrate; a nickel oxide layer is disposed on the conductive layer; a wire is connected to the conductive layer and the MOS field effect transistor; and an insulating layer is attached to the substrate, The conductive layer and the oxidized layer are exposed, and the oxide recording layer is exposed to form a sensing region. The object of the present invention is to provide an acid-made n-making method which has the advantages of low cost, simple process, high stability, excellent reliability and durability. In order to achieve the above object, the present invention is an extended gate field effect transistor structure, and the manufacturing method is completed according to the following steps: forming a substrate;
形成一設置於該基底上之導電層； 形成-設置於該導縣上之氧化錄層； 氧半場效電晶體；以及 提供一導線連接於該導電層與一金 導電層與氧鎳層，並露出該氧化鎳層 形成一絕緣層包覆於該基底 形成一感測區。 ,1：俾错由本發明之結構與製作方法，本發明係將氧化錄製 延1具有延物_狀件之分離式結構。將此分離 W刪測梅合商梅氧半場瞻3體，由嫌簡單且製 201226897 更為簡化，不需要再額外製作金氧半場效電晶體的部分，因此可降低生產 成本；加上商品化金氧半場效電晶體已完全封裝，可減少光及外界粉塵對 元件的〜響’增加里測之穩定性，適合做成可拋棄式之生醫感測器，拓廣 生物醫療方面之研究與應用。本發明酸驗值感測器相較於習用技術，具有 更良好之靈敏纽雜度，賤低成本、製程簡肖、高敎性，有極佳之 可靠度及耐用度等優點之酸鹼值感測器。 【實施方式】 為達成上述目的及功效，本發明所採用之技術手段及構造，兹繪圖就 本發明較佳實補詳加制其概與魏如下，俾利完全了解。 清參閱第-圖與第二圖所示，第一圖係為本發明較佳實施例之截面 圖說明本發明氧化錄酸驗值感測器之結構，第二圖係為本發明較佳實施 例之實施不意圖，綱本酬制於糕_糕測量纟統（ι·ν___ system)。本發明係包括有： 金氧半場效電晶體1 ; 延伸式閘極感測元件2，該延伸式閘極感測元件2包括有： 基底2卜例如該基底21可為藍寶石（sapphire)、矽基板（siiic〇n)、 石英破璃（quartz)或ΙΠ-ν族化合物半導體材料，於本實施例中，係 才木用5 X 10 mm2大小之石英玻璃作為感測元件之基板（犯⑽拙）； 導電層22，該導電層22係設置於該基底u上，該導電層a係為 銘（A1)金屬、舶（Pt)金屬、鉻（Cr)金屬、金（Au)金屬、欽（Ti) 金屬、銳（Pd)金屬、錄（Ni)金屬、或是銅（Cu)金屬，於本實施 例中錢電層22係為氧化銦錫（ΙΤ〇)，該導電層22厚度為介於丨 6 201226897 nm~100#m 之間； 氧化鎳（NiO)層23，該氧化錄層a係設置於該導電層r之上， 該氧化鎳層23厚度為介於！咖〜1〇〇〇邮之間； 導線24 1¾導線24係連接於該導電層a與該金氧半場效電晶體 1，係為鑛銀線或銅線等導電特性良好之金屬線；以及 緣s 5該、..邑緣層25必需具良好之絕緣性與抗腐银性，係包覆 :〆土底21導電層22與氧化錄層23，並露出該氧化錄層23形成一 感測區231 ’該感測區231之感測面積大小介於0.W000匪2 ,於本 實施例中該絕緣層25係為環氧樹脂。 而本發明氧化錄酸鹼值感測器製造方法係依照下列步驟完成： 形成-基底21，係先將基板浸泡於酒精或丙鲷溶液中，並置入超音波 震逢器2〇分鐘，利用震盈效果將附著於試片表面之灰塵粒子、油潰及原生 氧化層去除； 形成-設置於該基底21上之導電層22，其中，該導電層22係利用身 的控濺鐘的方式將氧化銦錫（IT〇)沉積於基底a之上或利用熱蒸避 2式雜（Αυ金屬細⑻金屬或鉻（⑺金屬或金（Au)金屬或 底w金屬敏⑽金屬或修）金屬或銅（cu)金屬晴於該基 ' 1之上’ _電層22亦可_其他賴技術製作而成，且該導電層22 之厚度為介於1 曰 定性。其中該導電 料之門姻控雜功率可為介於1〇〜靖之間、時間為介於ω秒〜μ 刀鐘之間、卫傾力為介於G丨,mTbrrForming a conductive layer disposed on the substrate; forming an oxide recording layer disposed on the cathode; an oxygen half field effect transistor; and providing a wire connected to the conductive layer and a gold conductive layer and the nickel oxide layer, and Exposing the nickel oxide layer to form an insulating layer over the substrate to form a sensing region. 1, the error is caused by the structure and manufacturing method of the present invention, and the present invention is to extend the oxidation recording by a separate structure having a stretched shape. This separation W deletes the Meihe mei mei half-field 3 body, which is simpler and the system 201226897 is more simplified, no need to make additional parts of the gold-oxygen half-field effect transistor, thus reducing the production cost; plus commercialization The gold-oxygen half-field effect transistor has been completely packaged, which can reduce the stability of light and external dust on the component. It is suitable for making a disposable medical sensor, and research and development of biomedical research. application. Compared with the conventional technology, the acid value sensor of the invention has better sensitivity and complexity, low cost, simple process, high entanglement, and excellent acidity and alkalinity with excellent reliability and durability. Sensor. [Embodiment] In order to achieve the above object and effect, the technical means and structure adopted by the present invention are described in detail in the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view of a preferred embodiment of the present invention for explaining the structure of an oxidation recording acid value sensor of the present invention, and the second drawing is a preferred embodiment of the present invention. The implementation of the example is not intended, and the scheme is compensated for the cake 糕 cake measurement system (ι·ν___ system). The present invention includes: a gold oxide half field effect transistor 1; an extended gate sensing element 2, the extended gate sensing element 2 comprising: a substrate 2, for example, the substrate 21 can be sapphire, 矽A substrate (siiic〇n), a quartz glass (quartz) or a ΙΠ-ν compound semiconductor material. In the present embodiment, a quartz glass having a size of 5×10 mm 2 is used as a substrate of a sensing element (10) a conductive layer 22, the conductive layer 22 is disposed on the substrate u, the conductive layer a is a metal (A1), a (Pt) metal, a chromium (Cr) metal, a gold (Au) metal, a Ti) metal, sharp (Pd) metal, recorded (Ni) metal, or copper (Cu) metal, in this embodiment, the money layer 22 is indium tin oxide (ΙΤ〇), the thickness of the conductive layer 22 is Between 6 201226897 nm~100#m; a nickel oxide (NiO) layer 23, the oxide recording layer a is disposed on the conductive layer r, and the thickness of the nickel oxide layer 23 is between! Between the coffee and the mail; the wire 24 13⁄4 wire 24 is connected to the conductive layer a and the metal oxide half field effect transistor 1, which is a metal wire with good electrical conductivity such as a silver or copper wire; s 5, the rim layer 25 must have good insulation and anti-corrosion properties, coated: the bauxite floor 21 conductive layer 22 and the oxide recording layer 23, and expose the oxide recording layer 23 to form a sensing The sensing area of the sensing area 231 is between 0.W000 and 2, and the insulating layer 25 is epoxy in this embodiment. The method for manufacturing the oxidized acid-base sensor of the present invention is completed according to the following steps: Forming the substrate 21 by first immersing the substrate in an alcohol or a solution of acetonitrile, and placing the ultrasonic oscillating device for 2 minutes, using The shock effect removes dust particles, oil collapse, and native oxide layer attached to the surface of the test piece; forming a conductive layer 22 disposed on the substrate 21, wherein the conductive layer 22 is controlled by a body-controlled splashing clock Indium tin oxide (IT〇) is deposited on the substrate a or by heat evading type 2 (metal thin (8) metal or chromium ((7) metal or gold (Au) metal or bottom w metal sensitive (10) metal or repair metal or The copper (cu) metal is clear on the base '1' and the electrical layer 22 can also be fabricated by other techniques, and the thickness of the conductive layer 22 is between 1 and 2. The power can be between 1〇~ Jing, the time is between ω seconds~μ, the guard force is between G丨, mTbrr
⑽之間； -里為介於卜30C 201226897 形成一設置於該導電層22上之氧化鎳層23，該氧化鎳（Ni〇)層係利 用射頻磁控濺鍍的方式沉積形成於該基底21及導電層22上，形成該氧化 鎳層23之步驟亦可利用其他鍍膜技術製作而形成，該氧化鎳層23厚度為 介於1 nm〜1000 nm之間。其中該氧化鎳層23之射頻磁控濺鍍功率可為介 於10〜1500 W之間、時間為介於1〇秒〜1〇〇分鐘之間、工作壓力為介於 0.1-100 mTorr之間、氬氣流量為介於moo sccm之間； 提供一導線24連接於該導電層22與一金氧半場效電晶體丨，係以銀膠 黏接導線24與導電層22，且該導線24係自導電層22延伸而出，以作為對 外之電性連接；以及 形成-絕緣層25包覆於該基底2卜導電層22與氧化錄層23，並露出 該氧化錄層23形成-感測區23卜如此即完成延伸式閘極感測元件2之封 裝。 而於本實施射’該射_控濺鍍系統之薄膜雜參數如下：工作壓 力設定於5 mTorr ;導電層η和氧化鎳層a树純度為;製程之氩 氣流量為20 seem ;導電層22之麟功率及濺鍍時間分別為而及2〇分 鐘’氧化録層23之濺鍍功率及濺鍍時間分別為勘界及分鐘。 請參閱第二圖所示，係為本發明較佳實施例之實施示意圖，說明本發 明應用於獅電 _4_(I_Vmeasurcmentsystem)。^^^^ 係將商品化IC (CD4咖B)之錄u (Drain)、祕i2 (S麵e)與銀/ 氣化銀（Ag/Ag⑴參考電極3接至Agi丨邮4155半導體參數分析儀4，並 將K中之增_錄半場效電M丨控制麵腿，且商品化ic之問極 U (Gate)連接至延伸式閘極感測元件2，其中本發明之延伸式閘極感測元 201226897 件2與參考電極3皆浸泡於制液5中。Between (10) and - for the formation of a nickel oxide layer 23 disposed on the conductive layer 22, the nickel oxide layer is deposited on the substrate by radio frequency magnetron sputtering. The step of forming the nickel oxide layer 23 on the conductive layer 22 can also be formed by using another plating technique. The thickness of the nickel oxide layer 23 is between 1 nm and 1000 nm. The radio frequency magnetron sputtering power of the nickel oxide layer 23 may be between 10 and 1500 W, the time is between 1 sec and 1 〇〇 minutes, and the working pressure is between 0.1 and 100 mTorr. The flow rate of the argon gas is between moo sccm; a wire 24 is connected to the conductive layer 22 and a gold oxide half field effect transistor, the silver wire is bonded to the wire 24 and the conductive layer 22, and the wire 24 is The conductive layer 22 extends out as an external electrical connection; and the formation-insulating layer 25 covers the conductive layer 22 and the oxide recording layer 23, and exposes the oxide recording layer 23 to form a sensing region. Thus, the package of the extended gate sensing element 2 is completed. In the present embodiment, the film impurity parameters of the shot-control sputtering system are as follows: the working pressure is set at 5 mTorr; the purity of the conductive layer η and the nickel oxide layer a tree is; the argon flow rate of the process is 20 seem; the conductive layer 22 The power and sputtering time of the Linlin are 2 minutes and the sputtering power and sputtering time of the oxide recording layer 23 are respectively demarcation and minutes. Referring to the second embodiment, which is a schematic diagram of the implementation of the preferred embodiment of the present invention, the present invention is applied to the lion_4_(I_Vmeasurcmentsystem). ^^^^ The commercial IC (CD4 coffee B) recorded u (Drain), secret i2 (S surface e) and silver / gasification silver (Ag / Ag (1) reference electrode 3 connected to Agi 丨 4155 semiconductor parameter analysis Instrument 4, and the increase in K is recorded in the half field effect M丨 control face leg, and the commercialized ic pole U (Gate) is connected to the extended gate sensing element 2, wherein the extended gate of the present invention The sensing element 201226897 2 and the reference electrode 3 are both immersed in the preparation liquid 5.
π ’閱第—圖與第二圖所示，其中第三圖係為本發明較佳實施例之特 、.在圖說明本發明氧化鄭嫩值感測II在不同酸驗值溶液巾所產生 的及極電流__電壓特性㈣。於操作溫度25。0時祕11電壓 VW.2V，分別於酸驗值ρΗ=2、4、6、8、ι〇、12的待測液5中浸泡約i 再進行畺測量測;及極U電流_閘極13電壓特性曲線時，係將元件設 定於正常之王倾域，故_ ^丨邮化5半導齡數分㈣*，其設定如 下：金氧半場效電晶體丨之沒極u電壓Vd=〇2V，參考電極3電壓 VreiN).5〜W。提供予參考電極3之籠將會藉由溶液之導電路徑傳導於金 乳半場效電晶體1之間極13端，且酸驗溶液之阳值越高，感應之起始電 壓會隨之上升。藉由此—機術可量測所定義之錄雖vg/△㈣。 請參閱第-圖、第二圖與第四圖所示，其中第四圖係為本發明較佳實 施例之特性鱗圖二，說明本發輒化舰齡感顚之麟錄度。由 於靈敏度為感測元件重要參數之_，其定義為每改變一個阳值，待測液5 與氧化錄層23界面間之表面電位的相對變化量。當pH值增加時，元件之 起始電壓隨之增加，此為當pH值增加時，氫離子濃度減少，氧化錄層^ 之表面電赠低，為使半賴之表面建立反制（Ιη·ί()η㈣小因此 必須施加更大之閘極13籠，而導致起始電壓之變化^由上述之電流_ 電壓量測㈣（Agilent^5)錢分析儀4可侧本發贿伸式祕感測 元件2之電流-電壓曲線中對應的pH值變化量。固定一汲極u電流(ι㈣」 ，’其輸出電壓值會隨pH細變化，進行數據分析後，柯求得本發明 氧化錄酸雖制ϋ之錄度(Δν(}/ΔρΗ)。氫離子細實驗巾，將上述製 9 201226897 備之乳化騎23浸入制液5巾（祕麵錄），並私罐抑參考 電極3進行里測’量測結果如圖所示，感測範圍pH=2、4、6、8、1〇、12 其靈敏度為59.G8 mV/pH ’雜度為_3，此—瓶趨勢為本發明氧化 鎳酸驗值感·之幽植^本發明之延伸摘極_轉2具有相當接 近能斯特理論值59.2 mV/pH之$敏度，前述所提到p D細伽et &丨在 20〇5年所發表之氧鱗（ZnC))輸值感她之下，本㈣元件之靈 敏度遠優於該種酸鹼值感測器。π 'reading the first-figure and the second figure, wherein the third figure is a special embodiment of the present invention. The figure shows that the oxidized Zhengn value sensing II of the present invention is produced in different acid test solution towels. And the pole current __ voltage characteristics (four). At the operating temperature of 25.0, the voltage of the 11th VW.2V is soaked in the liquid to be tested 5 of the acid test values ρΗ=2, 4, 6, 8, ι〇, 12, respectively, and then measured by 畺; U current _ gate 13 voltage characteristic curve, the component is set in the normal king of the domain, so _ ^ 丨 邮 5 5 semi-advanced number of points (four) *, its settings are as follows: gold oxygen half-field effect transistor The pole u voltage Vd=〇2V, the reference electrode 3 voltage VreiN).5~W. The cage provided to the reference electrode 3 will be conducted through the conductive path of the solution to the terminal 13 between the gold field half-effect transistors 1, and the higher the positive value of the acid solution, the higher the initial voltage of the induction. By this - machine can measure the defined record although vg / △ (four). Referring to the first, second and fourth figures, the fourth figure is a characteristic scale diagram 2 of the preferred embodiment of the present invention, which illustrates the degree of the sensation of the ship's age. Since the sensitivity is the important parameter of the sensing element, it is defined as the relative change in the surface potential between the liquid to be tested 5 and the interface of the oxide recording layer 23 for each positive change. When the pH value increases, the initial voltage of the component increases, which is when the pH value increases, the hydrogen ion concentration decreases, and the surface of the oxidation recording layer is low, so that the surface of the semi-dependent surface is counter-made (Ιη· ί() η (four) is small, so a larger gate 13 cage must be applied, resulting in a change in the starting voltage ^ by the above current _ voltage measurement (four) (Agilent ^ 5) money analyzer 4 can be side-baked The corresponding pH value change in the current-voltage curve of the sensing element 2. Fix a drain current u ((4)", 'the output voltage value will change with the pH, and after analyzing the data, the oxygen record of the invention is obtained. Although the acid is prepared by the enthalpy (Δν(}/ΔρΗ). The hydrogen ion fine test towel is immersed in the emulsified riding 23 prepared in the above-mentioned system 9 201226897 into the liquid preparation 5 towel (secret surface), and the private can is controlled by the reference electrode 3 The measured results are shown in the figure. The sensing range is pH=2, 4, 6, 8, 1〇, 12. The sensitivity is 59.G8 mV/pH 'the noise is _3. Invented Nickel Oxide Sense of Detecting · 幽 植 ^ The extended dip of the invention _ turn 2 has a sensitivity close to the Nernst theoretical value of 59.2 mV / pH, the aforementioned The sensitivity of the (4) component is much better than that of the pH sensor, which is derived from the oxygen sulphate (ZnC) value published by PT in the 20th and 5th years.
。月參閱第五圖所示’係為本發明較佳實施例之時間暫態響應圖，說明 本發明氧化錄酸驗值_器置於不同酸鹼溶液中之電流_時間暫態響應。由 圖中可清楚看出，pH量測範圍介於pH=2〜12之間，氧化鎳層將產生不同之 凊參閱全部附圖所示，相較於習用技術，本發明具有以下優點： -、树明具有更良好之靈敏度及線性度，具備低成本、製賴易、高穩 _ 植’有極佳之可靠度及耐財㈣點之_值❹指，若結合生物 :子的應用’如酵素、DNA ’可發展成酵素場效電晶體，可應用在醫 學檢驗、食品檢測、農業監測、環保、工業、製藥、微電子、生化科 ，、微機電、無線通訊、光電、民生安全、生物醫療、氫氣、氨氣之 乡種感峨體等積體電路之領域與產料多種用途。 ^判之分離錢構相冑適合做舰棄錢⑦，加上氧化_ 23部分 製作成本低’因此能廣泛顧於諸多產業中，尤其是生㈣療相關產 業’可增加生醫_元件之4射以及提高未來我國環保及化學工 業科技之競爭力。 201226897 透過上述之詳細說明，即可充分顯示本發明之目的及功效上均具有實 %之進步性’極具產業之利用性價值，且為目前市面上前所未見之新發明， 全符合發明專利要件，爰依法提出申請。唯以上所述著僅為本發明之較 佳實她例而已，當不能用以限定本發明所實施之範圍。即凡依本發明專利 範圍所作之均等變化與修飾，皆應屬於本發明專利涵蓋之範圍内，謹請責 審查委員明鑑，並祈惠准，是所至禱。 φ 【圖式簡單說明】 第-圖係為本發明較佳實施例之截面圖，說明本發明氧化錄酸驗值感測 器之結構。 第二圖係為本發明較佳實施例之實施示賴，說明本發明應用於電流-電 壓測量系統（I-V measurement system )。 第三圖係為本發明較佳實施例之特性曲線圖一，說明本發明氧化錦酸驗 值感測器在不同酸驗值溶液中所產生的沒極電流_間極電壓特性曲 • 線。 第四圖係為本發明較佳實施例之特性曲線圖二，說明本發明氧化錄酸驗 值感測器之酸鹼靈敏度。 第五圖係為本發明較佳實施例之時間暫態響應圖，說明本發明氧化錄酸 驗值感測器置料同_溶液中之電流·日铜暫態響應。 【主要元件符號說明】 1金氧半場效電晶體 11汲極 201226897 12源極 13閘極 2延伸式閘極感測元件 21基底 22導電層 23氧化鎳層 231感測區 _ 24導線 25絕緣層 3參考電極 4參數分析儀 5待測液. Referring to the fifth embodiment, the time transient response diagram of the preferred embodiment of the present invention is illustrated as a current-time transient response of the oxidation recording acid detector of the present invention in different acid-base solutions. As is clear from the figure, the pH measurement range is between pH=2 and 12, and the nickel oxide layer will be different. Referring to the drawings, the present invention has the following advantages compared with the conventional technology: , Shuming has better sensitivity and linearity, with low cost, easy to manufacture, high stability _ 植 'has excellent reliability and good fortune (four) points _ value , refers to the combination of biological: sub-application' Such as enzymes, DNA 'can be developed into enzyme field effect transistor, can be applied in medical testing, food testing, agricultural monitoring, environmental protection, industry, pharmaceutical, microelectronics, biochemistry, MEMS, wireless communications, optoelectronics, people's livelihood security, The fields of bio-medicine, hydrogen, ammonia, and the like, and the use of materials for various purposes. ^ Judging the separation of money structure is suitable for ship abandonment of money 7, plus oxidation _ 23 part of the production cost is low 'so can be widely considered in many industries, especially the raw (four) treatment related industries can increase the number of biomedical components Shoot and improve the competitiveness of China's environmental protection and chemical industry technology in the future. 201226897 Through the above detailed description, it can fully demonstrate that the purpose and efficacy of the present invention are both practical and highly productive, and it is a new invention that has never been seen before on the market. Patent requirements, 提出 apply in accordance with the law. It is to be understood that the above description is only a preferred embodiment of the invention and is not intended to limit the scope of the invention. All changes and modifications made in accordance with the scope of the patent of the invention shall fall within the scope covered by the patent of the invention, and it is the responsibility of the examiner to examine the certificate and pray for it. φ [Simplified description of the drawings] Fig. 1 is a cross-sectional view showing a preferred embodiment of the present invention, illustrating the structure of the oxidation recording acid detection sensor of the present invention. The second figure is an implementation of the preferred embodiment of the invention, illustrating the application of the invention to an I-V measurement system. The third figure is a characteristic curve of the preferred embodiment of the present invention. FIG. 1 is a graph showing the immersed current_interpolar voltage characteristic curve generated by the oxidized acetal acid value sensor of the present invention in different acid test solutions. The fourth figure is a characteristic curve of the preferred embodiment of the present invention, and illustrates the acid-base sensitivity of the oxidation-recording acid value sensor of the present invention. The fifth figure is a time transient response diagram of the preferred embodiment of the present invention, illustrating the transient response of the current and day copper in the oxidizing acid detector of the present invention. [Main component symbol description] 1 gold oxide half field effect transistor 11 drain 201226897 12 source 13 gate 2 extended gate sensing element 21 substrate 22 conductive layer 23 nickel oxide layer 231 sensing area _ 24 wire 25 insulation layer 3 reference electrode 4 parameter analyzer 5 test solution