TW201226627A - Method for manufacturing laminate having metal film, metal pattern material and method for manufacturing the same, and printed wiring board - Google Patents

Method for manufacturing laminate having metal film, metal pattern material and method for manufacturing the same, and printed wiring board Download PDF

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Publication number
TW201226627A
TW201226627A TW100143636A TW100143636A TW201226627A TW 201226627 A TW201226627 A TW 201226627A TW 100143636 A TW100143636 A TW 100143636A TW 100143636 A TW100143636 A TW 100143636A TW 201226627 A TW201226627 A TW 201226627A
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Taiwan
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group
polymer layer
metal film
substrate
polymer
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TW100143636A
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Chinese (zh)
Inventor
Mitsuyuki Tsurumi
Takatsugu Kawano
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Fujifilm Corp
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Publication of TW201226627A publication Critical patent/TW201226627A/en

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/386Improvement of the adhesion between the insulating substrate and the metal by the use of an organic polymeric bonding layer, e.g. adhesive
    • H05K3/387Improvement of the adhesion between the insulating substrate and the metal by the use of an organic polymeric bonding layer, e.g. adhesive for electroless plating
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1168Graft-polymerization
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/022Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/108Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by semi-additive methods; masks therefor
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/389Improvement of the adhesion between the insulating substrate and the metal by the use of a coupling agent, e.g. silane

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Laminated Bodies (AREA)
  • Chemically Coating (AREA)

Abstract

A method for manufacturing a laminate having a metal film in the disclosure includes: a step of forming underlayer, performed on a substrate such that a composition for forming a underlayer contacts with the substrate, thereby forming the underlayer including a silane coupling agent; a step of forming polymer layer, performed at the underlayer including a silane coupling agent, such that a composition for forming a polymer layer contacts with the underlayer including a silane coupling agent, and energy is supplied to form the polymer layer; a step of supplying catalyst, at which a plating catalyst or its precursor is supplied to the polymer layer; and a plating step, at which plating is performed on the plating catalyst or its precursor, and a metal film is formed on the polymer layer. The composition for forming the underlayer and/or the composition for forming the polymer layer include a polymerizable compound containing a P=O group.

Description

201226627 六、發明說明: 【發明所屬之技術領域】 本發明是有關於一種具有金屬膜的積層體的製造方 法。 【先前技術】 先前以來’在絕緣性基板的表面形成金屬圖案的配線 的金屬配線基板廣泛用於電子零件或半導體元件。 此金屬圖案材料的製作方法主要使用「減成法」。此減 成法是在形成於基板表面的金屬膜上,設置藉由照射活性 光線而感光的感光層,對此感光層進行成像曝光,然後進 行顯影而形成抗蝕劑像,接著,對金屬膜進行蝕刻而形成 金屬圖案’最後將抗姓劑剝離的方法。 在藉由此方法而得的金屬圖案中,利用藉由在基板表 面設置凹凸而產生的增黏效果,而表現出基板與金屬圖案 (金屬膜)之間的密接性。因此,在使用所得的金屬圖案 作為金屬配線時,存在因金屬圖案的基板界面部的凹凸而 引起高頻特性變差的問題。另外存在以下問題,為了對基 板表面進行凹凸化處理,而必須藉由鉻酸等腐蝕性酸對基 =表面進行處理,因此為了獲得與基板的密接性優異的金 屬圖案,而必需煩雜的步驟。 ^ 2别疋,對於玻璃基板或陶瓷基板等,並無將表面粗 兀美方法,而是使用在玻璃質(glass frit)中混合金 叔^仃锻燒之類的方法、或者紐或麟等真空法。然 而锻燒必需非常高的高溫,而在設備或生產性、與有機201226627 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a method for producing a laminate having a metal film. [Prior Art] Metal wiring boards which have previously formed wirings of metal patterns on the surface of an insulating substrate have been widely used for electronic parts or semiconductor elements. The method of manufacturing the metal pattern material mainly uses a "reduction method". The subtractive method is to provide a photosensitive layer which is exposed to light by irradiation with active light on a metal film formed on the surface of the substrate, imagewise exposing the photosensitive layer, and then developing to form a resist image, followed by a metal film. A method of etching to form a metal pattern 'finally stripping the anti-surname agent. In the metal pattern obtained by this method, the adhesion between the substrate and the metal pattern (metal film) is exhibited by the adhesion-increasing effect by providing irregularities on the surface of the substrate. Therefore, when the obtained metal pattern is used as the metal wiring, there is a problem that the high-frequency characteristics are deteriorated due to the unevenness of the substrate interface portion of the metal pattern. Further, in order to perform the roughening treatment on the surface of the substrate, it is necessary to treat the base surface by a corrosive acid such as chromic acid. Therefore, in order to obtain a metal pattern excellent in adhesion to the substrate, a troublesome step is required. ^ 2 Don't worry, for glass substrates or ceramic substrates, there is no way to compare the surface roughness, but to use a method of mixing gold unboiled in glass frit, or New Zealand or Lin. Vacuum method. However, calcination must be very high in temperature, while in equipment or production, and organic

4 S 201226627 物質的匹配方面存在問題’真空法巾也在裝置或生產性上 存在問題’而且存在與金屬_密接較弱的問題。 解決此問題的方法已知,在具有石夕貌偶合劑層的基板 上生成與此絲直接結合的接枝聚合物㈣絲合物層, 對此聚合㈣實施峨,並對聚合物層上所得的金屬膜進 雜刻的方法(專利讀1)。㈣此方法,可不將基板表 面粗面化而改良基板與金屬膜的密接性。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2008_242412號公報 一另一方面,近年來,設想將具有金屬配線基板的半導 體元件用於更嚴酷的高溫條件下,並㈣開發丨即便暴露 在此種環境下亦表現出充分的密接性的金屬膜。、 本發明者等人參照專利文獻!所揭示的發明,使用石夕 ,偶合劑層f造具有金屬朗積雜,對近來所要求的暴 ,在此種更嚴酷的高溫條件後的金屬膜的密接性進行研 九、、’。果發現,於暴露在尚溫條件後的金屬膜上看到大量 因金屬膜的密接不充分而產生的「隆起」,金屬膜的密接性 在實用上未必是能令人滿意的結果。 【發明内容】 本發明是赛於上述實際情況而成,其目的是提供一種 2層體的製衫法,能胶地形成具有即縣露在高溫環 浼下亦表現出與基板的優異的密接性的金屬膜的積層體。 本發明者等人對上述課題進行了銳意研究,結果發 201226627 基的聚合性化合物而可解決上述 現,藉由使用含有p==〇 課題。 發明者等人發現’藉由以下所示的方 成上述目的。 ⑴-種具有金屬膜的積層體的製造方法, 其於基板上使包含具有反應性基罐 偶口綱基底層形成馳成物接觸,而形成含魏偶 的基底層; 聚合物層形成步驟,其於含石夕烧偶合劑的基底層上, 使包含具有聚合性基、及與麵觸或錢_形成相互 作用的官能基的聚合物的聚合物層形成用組成物接觸後, 供給能量而形成聚合物層; 觸媒供給步驟,其對聚合物層供給鍍敷觸媒或其前驅 物;以及 ' 鍍敷步驟,其對鍍敷觸媒或其前驅物進行鍍敷,而於 聚合物層上形成金屬膜;且 於基底層形成用組成物及/或聚合物層形成用組成物 中含有含P=〇基的聚合性化合物。 (2) 如(1 )所述之積層體的製造方法,其中含p=〇 基的聚合性化合物為後述通式(丨)所示的化合物。 (3) 如(1)或(2)所述之積層體的製造方法,其中 上述反應性基為甲基丙婦醯基、丙埽醯基、縮水甘油基、 版基、苯乙稀基、乙烯基、疏基、脲基、硫基、異氰酸酯 基或羧基。 ~4 S 201226627 There is a problem with the matching of substances. 'The vacuum knives are also problematic in terms of equipment or productivity' and there is a problem that the adhesion to the metal is weak. A method for solving this problem is known, in which a graft polymer (tetra)-filament layer directly bonded to the filament is formed on a substrate having a layer of a lithographic coupling agent, and the polymerization (4) is carried out on the polymer layer, and the polymer layer is obtained. The method of metal film into the engraving (patent reading 1). (4) In this method, the adhesion between the substrate and the metal film can be improved without roughening the surface of the substrate. [Prior Art Document] [Patent Document 1] Japanese Patent Laid-Open Publication No. 2008-242412. In recent years, it has been conceived that a semiconductor element having a metal wiring substrate is used under more severe high temperature conditions, and (iv) development金属 A metal film that exhibits sufficient adhesion even when exposed to such an environment. The inventors and the like refer to the patent documents! In the disclosed invention, the use of Shi Xi and the coupling agent layer f is made to have a metal lanthanum, and the adhesion of the metal film after such a severe high temperature condition is studied. As a result, it has been found that a large amount of "bumping" due to insufficient adhesion of the metal film is observed on the metal film exposed to the temperature condition, and the adhesion of the metal film is not necessarily a satisfactory result in practical use. SUMMARY OF THE INVENTION The present invention has been made in the above-described actual circumstances, and an object thereof is to provide a two-layer body-made shirting method which can be formed into a gel and has an excellent adhesion to a substrate under the high temperature ring. A layered body of a metallic film. The inventors of the present invention have conducted intensive studies on the above problems, and as a result, the polymerizable compound of 201226627 has been produced, and the above problem can be solved by using p==〇. The inventors and the like have found that the above object is achieved by the following. (1) A method for producing a laminate having a metal film, comprising: forming a base layer containing a Wei couple on a substrate by forming a base layer having a reactive base; and forming a polymer layer; On the undercoat layer containing the ceramsite coupling agent, the polymer layer forming composition containing the polymerizable group and the functional group that interacts with the surface contact or the money is contacted, and then the energy is supplied. Forming a polymer layer; a catalyst supply step of supplying a plating catalyst or a precursor thereof to the polymer layer; and a plating step of plating the plating catalyst or its precursor to the polymer layer A metal film is formed thereon; and a polymerizable compound containing a P=fluorenyl group is contained in the base layer forming composition and/or the polymer layer forming composition. (2) The method for producing a layered product according to the above aspect, wherein the polymerizable compound containing p = fluorenyl group is a compound represented by the following formula (?). (3) The method for producing a laminate according to (1) or (2), wherein the reactive group is methyl propyl sulfonyl group, propyl fluorenyl group, glycidyl group, cyclyl group, styrene group, Vinyl, sulfhydryl, ureido, thio, isocyanate or carboxyl. ~

S 6 201226627. -y -/ (4) 如(1)至(3)中任一項所述之積層體的製造方 法,其中聚合物層形成用組成物還含有具有反應性基的石夕 烧偶合劑。 (5) 如(1)至(4)中任一項所述之積層體的製造方 法,其中上述聚合物層形成用組成物中含有具有反應性基 的石夕烧偶合劑、及含Ρ = 〇基的聚合性化合物。 (6) 如(1)至(5)中任一項所述之積層體的製造方 法’其中上述基板為玻璃基板或陶瓷基板。 (7) 如(1)至(6)中任一項所述之積層體的製造方 法’其中在鍍敷步驟後具有進行加熱處理的加熱步驟。 (8) 如(1)至(7)中任一項所述之積層體的製造方 法,其中在基底層形成步驟中,於基板上使基底層形成用 組成物接觸後’藉由溶劑進行上述基板的清洗。 (9) 一種金屬圖案材料的製造方法,其包括圖案形成 =驟,其將藉由如(1)至(8)中任一項所述之積層體的 製造方法而得的積層體中的金屬膜蝕刻成圖案狀,而形成 圖案狀金屬膜。 (10) —種金屬圖案材料,其藉由如(9)所述之金屬 圖案材料的製造方法而得。 (11) 一種印刷配線板,其包含如(1〇)所述之金屬 圖案材料。 [發明的效果] 根據本發明,可提供一種積層體的製造方法,其能簡 便地形成具有即便暴露在高溫環境下亦表現出與基板的優 201226627 異的密接性的金屬膜的積層體。 【實施方式】 及藉的製造方法、 詳細=:對树_與絲技崎行味㈣徵點進行 本發明在使用含矽烷偶合劑的基底 含?=〇基㈣合性化合_於含魏偶㈣Γ基底 或聚合物層形成時的方面具有特徵。藉由採用此種構曰成, 基板與含雜偶合_基底層之間的密紐、及 合劑的基底層與聚合物層之間的密接性進—步提高,=果 可獲得即縣露在高溫條件下㈣在基㈣金^之^表 現出優異的密接性的積層體。 < 本發明的積層體的製造方法具有以下4個步驟,在基 底層形成用組成物及/或聚合物層形成用組成物中含有含p =0基的聚合性化合物。 (1) 基底層形成步驟’其於基板上使包含具有反應性 基的矽烷偶合劑的基底層形成用組成物接觸,而形成含石夕 烷偶合劑的基底層; (2) 聚合物層形成步驟’其於含矽烷偶合劑的基底層 上,使包含聚合物的聚合物層形成用組成物接觸後,供給 能量而形成聚合物層,上述聚合物具有聚合性基、及與鍍 敷觸媒或其前驅物形成相互作用的官能基; (3) 觸媒供給步驟’其對聚合物層供給鍍敷觸媒或其The method for producing a layered product according to any one of the aspects of the present invention, wherein the polymer layer forming composition further contains a reactive base. Coupling agent. (5) The method for producing a layered product according to any one of the aspects of the present invention, wherein the polymer layer-forming composition contains a sulphur coupling agent having a reactive group, and yttrium-containing A polymerizable compound of a mercapto group. (6) The method for producing a laminate according to any one of (1) to (5) wherein the substrate is a glass substrate or a ceramic substrate. (7) The method for producing a laminated body according to any one of (1) to (6) wherein the heating step is performed after the plating step. (8) The method for producing a layered product according to any one of (1) to (7), wherein, in the step of forming the base layer, after the base layer forming composition is brought into contact with the substrate, the solvent is used to perform the above. Cleaning of the substrate. (9) A method of producing a metal pattern material, comprising a pattern formation = a metal in a laminate obtained by the method for producing a laminate according to any one of (1) to (8) The film is etched into a pattern to form a patterned metal film. (10) A metal pattern material obtained by the method for producing a metal pattern material as described in (9). (11) A printed wiring board comprising the metal pattern material as described in (1). [Effect of the Invention] According to the present invention, there is provided a method for producing a laminate, which can easily form a laminate having a metal film which exhibits adhesion to a substrate which is excellent in adhesion to a substrate even when exposed to a high temperature environment. [Embodiment] The manufacturing method and the detailed method of the borrowing method are as follows: The present invention is applied to a substrate containing a decane coupling agent. = fluorenyl (four) compositive compound _ is characterized in terms of the formation of a Wei (4) fluorene-containing substrate or a polymer layer. By adopting such a structure, the adhesion between the substrate and the impurity-containing coupling layer, and the adhesion between the base layer and the polymer layer of the mixture are further improved, and the result is obtained. (4) A layered body exhibiting excellent adhesion at the base (four) gold ^ under high temperature conditions. < The method for producing a layered product of the present invention comprises the following steps: a polymerizable compound containing a p=0 group in the base layer forming composition and/or the polymer layer forming composition. (1) a base layer forming step of contacting a base layer forming composition containing a decane coupling agent having a reactive group on a substrate to form a base layer containing an anthracene coupling agent; (2) forming a polymer layer The step of contacting a polymer layer-forming composition containing a polymer on a base layer containing a decane coupling agent, and supplying energy to form a polymer layer having a polymerizable group and a plating catalyst Or a precursor thereof to form an interacting functional group; (3) a catalyst supply step 'which supplies a plating catalyst to the polymer layer or

S 8 201226627+ 前驅物; ⑷鍍敷步驟,其賴_媒或其前驅物崎錢敷, 而於聚合物層上形成金屬膜。 及其操作方法進行 以下’對各步驟中所使用的材料、 詳細闡述。 <步驟(1):基底層形成步驟> v驟(1)疋於基板上使包含具有反應性基的石夕院偶合 劑的基底層軸驗成物接觸,㈣成含魏偶合劑的基 底層(以下亦_為基底層)的步驟。藉由此步驟,可經 由石夕烧偶合劑的水解性基,*形成與基板表面上化學鍵: 的含石夕魏合劑·底層’此層發揮㈣為後述的聚合物 層的基底層的魏。另外,亦可於此基底層與後述聚合物 層之間經由反應性基㈣成化學鍵,結果麵成於聚合物 層表面的金屬膜與基板之間表現優異的密接性。 更具體而言,藉由此步驟,如圖丨(A)所示般於基板 10上形成含矽烷偶合劑的基底層12。 首先,對本步驟中所使用的材料(矽烧偶合劑、含p —0基的聚合性化合物、基底層形成用組成物、基板等) 進行詳細闡述,然後對此步驟的順序進行詳細闡述。 (矽烷偶合劑) 本步驟中所使用的矽烷偶合劑具有反應性基。較佳 為,此反應性基與後述聚合物反應,而於聚合物層與基底 層之間形成共價鍵。 — 反應性基的種類只要與後述的聚合物反應,則並無特 201226627 別限制,例如可列舉:曱基丙烯醯基、丙烯醯基、縮水甘 油基、胺基、羧基、乙烯基、巯基、苯乙烯基、脲基、硫 基、異氰酸酯基等。其中,就與聚合物層的反應性佳,金 屬膜的密接性更優異的方面而言,較佳為可列舉:曱基丙 烯醯基、丙烯醯基、縮水甘油基、胺基、笨乙烯基、異氰 酸酯基等。 、 反應性基在矽烷偶合劑中可含有2個以上。 本步驟中所使用的矽烷偶合劑的較佳形態可列舉:以 下通式(3)所示的化合物。 [化1] (fjO m 通式(3) Za-Lc-Si-eW) n 通式(3)中’ za表示反應性基。反應性基的定義如 上所述。 R分別獨立表示氫原子或烴基。烴基可列舉:脂肪族 煙基(例如烷基、烯基等。較佳為碳數1〜碳數12。)、或 芳香族烴基(例如苯基、萘基等)。其中,烴基較佳為甲基、 乙基。 在R存在多個時,可相同亦可不同。 W表示水解性基。具體可列舉:烷氧基(較佳為碳數 1〜兔數8的烧氧基。例如曱氧基、乙氧基等)、鹵素原子 (氟原子、氣原子、溴原子、碘原子)、醯氧基(乙醯氧基、 201226627 丙隨氧基等)等’其中就反應性良好的方面而言,較佳為 曱氧基、乙氧基、氯原子。 以表示單鍵、或二價有機基。二價有機基可列舉:經 取代或未經取代的脂肪族烴基(例如伸燒基。較佳為碳數 1〜碳數8)、經取代或未經取代的芳香族烴基(例如伸芳 基。較佳為碳數 6〜碳數 12)、-Ο-、-S-、-SOr、-N(R)_(R : 烷基)、-CO-、-NH-、-COO-、-CONH-、或將該些基加以 組合而成的基(例如伸烷氧基、伸烷氧羰基、伸烧基裁氧 基等)等。 其中,就化合物製作的方面而言,較佳為伸烧基、_〇_、 或將該些基加以組合而成的基。 為單鍵時,表示通式(3)的za與Si直接連結。 m表示〇〜2的整數’ η表示1〜3的整數,並滿足^ + m=3的關係。其中,m較佳為〇〜1。η較佳為2〜3。 所使用的矽烷偶合劑例如可列舉:γ_縮水甘油氧基丙 基三乙氧基石夕烧、γ-縮水甘油氧基丙基三曱氧基石夕烧、 縮水甘油氧基丙基曱基二乙氧基矽烷、丫_縮水甘油氧基丙 基曱基二曱氧基矽烷、2-(3,4·環氧環己基)乙基三曱氧基矽 烷、乙烯基三甲氧基矽烷、乙烯基三乙氧基矽烷、烯丙基 二曱氧基矽烷、甲基丙烯酸3-三曱氧基矽烷基丙酯、3_(丙 烯醯氧基)丙基三曱氧基矽烷、2·(3,4-環氧環己基)乙基三曱 氧基矽烷、胺基丙基三甲氧基矽烷、胺基丙基三乙氧基矽 烷、3-(2-胺基乙基)胺基丙基三甲氧基矽烷、3_曱基丙烯醯 氧基丙基甲基二曱氧基矽烷、3-巯基丙基三甲氧基矽烷、 201226627 »/〆〆〆 νγ** 3-酼基丙基甲基二甲氧基矽烷、3_巯基丙基三乙氧基矽 烷、乙烯基三氣矽烷等。 (基底層形成用組成物) 基底層形成用組成物含有上述;s夕烧偶合劑。 基底層形成用組成物中的石夕院偶合劑的含量並無特別 限制,就操作性、基底層的層厚控制的容易性、及所生成 的金屬膜的密接強度等的方面而言,相對於組成物總量, 較佳為0.1質量%〜100質量%,更佳為05質量%〜2〇質 量%。 (含Ρ = 〇基的聚合性化合物) 基底層形成用組成物及/或後述的聚合物層形成用組 成物中含有含Ρ=〇基的聚合性化合物。 含Ρ=0基的聚合性化合物是具有Ρ = 〇基(氧化膦 基i與聚合性基的化合物。在基底層形成用組成物含有此 化合物時,經由p=0基而於與矽烷偶合劑之間形成牢固 ,相互作用,並且此化合物會在矽烷偶合劑中均勻地分 政另外,藉由具有聚合性基,可在與後述的聚合物層之 間形成牢固的共價鍵。結果可獲得具有密接性優異的金屬 膜的積層體。 含P = 0基的聚合性化合物只要含有p = 〇基與聚合 性基即可。 ,合性基例如可列舉:自由基聚合性基、陽離子聚合 1"生基等。其中,就反應性的觀點而言較佳為自由基聚合 生基。自由基聚合性基例如可列舉:曱基丙烯醯基、丙烯 201226627 醯基、衣康酸酯基、丁烯酸酯基、異丁烯酸酯基、順丁烯 二酸酯基、笨乙烯基、乙烯基、丙烯醯胺基、甲基丙烯醯 胺基等。其中,較佳為曱基丙烯醯基、丙烯醯基、乙烯基、 笨乙烯基、丙烯醯胺基、曱基丙烯醯胺基,特佳為丙烯醯 基、曱基丙烯醯基、苯乙烯基。 含P = 〇基的聚合性化合物的較佳形態可列舉:以下 通式(1)所示的化合物。 [化2] 〇 通式⑴ 通式Ο)中,xa表示聚合性基。聚合性基的定義如 上所述。S 8 201226627+ precursor; (4) a plating step, in which a medium or a precursor thereof is applied, and a metal film is formed on the polymer layer. The method of operation and the following are described in detail in the materials used in each step. <Step (1): basal layer forming step> v (1) contacting the basal layer axial test composition containing the reactive base of the Shi Xiyuan coupling agent on the substrate, and (iv) forming a Wei-containing coupling agent The step of the base layer (hereinafter also referred to as the base layer). By this step, the hydrolyzable group of the stagnation coupling agent can be used to form a chemical bond with the surface of the substrate: the layer containing the shi wei wei mixture and the underlayer ‘this layer functions as the basal layer of the polymer layer to be described later. Further, the base layer and the polymer layer to be described later may form a chemical bond via the reactive group (tetra), and as a result, the metal film having a surface formed on the surface of the polymer layer and the substrate exhibit excellent adhesion. More specifically, by this step, the underlayer 12 containing the decane coupling agent is formed on the substrate 10 as shown in Fig. (A). First, the materials used in this step (a sulphur coupling agent, a polymerizable compound containing a p-based group, a composition for forming a base layer, a substrate, and the like) will be described in detail, and the order of this step will be described in detail. (decane coupling agent) The decane coupling agent used in this step has a reactive group. Preferably, the reactive group reacts with a polymer described later to form a covalent bond between the polymer layer and the underlayer. — The type of the reactive group is not particularly limited to 201226627 as long as it reacts with a polymer to be described later, and examples thereof include a mercapto acrylonitrile group, an acryl fluorenyl group, a glycidyl group, an amine group, a carboxyl group, a vinyl group, a fluorenyl group, and the like. Styryl group, urea group, sulfur group, isocyanate group, and the like. Among them, the reactivity with the polymer layer is good, and the adhesion of the metal film is more excellent, and examples thereof include a mercapto propylene group, an acryl fluorenyl group, a glycidyl group, an amine group, and a stupid vinyl group. , isocyanate groups, and the like. Further, the reactive group may contain two or more of the decane coupling agents. A preferred embodiment of the decane coupling agent used in the present step is a compound represented by the following formula (3). (fjO m Formula (3) Za-Lc-Si-eW) n In the formula (3), 'za' represents a reactive group. The definition of the reactive group is as described above. R independently represents a hydrogen atom or a hydrocarbon group. The hydrocarbon group may, for example, be an aliphatic group (e.g., an alkyl group or an alkenyl group, preferably having a carbon number of 1 to a carbon number of 12) or an aromatic hydrocarbon group (e.g., a phenyl group or a naphthyl group). Among them, the hydrocarbon group is preferably a methyl group or an ethyl group. When there are a plurality of R, they may be the same or different. W represents a hydrolyzable group. Specific examples thereof include an alkoxy group (preferably an alkoxy group having a carbon number of 1 to a rabbit number of 8, for example, a decyloxy group or an ethoxy group), a halogen atom (a fluorine atom, a gas atom, a bromine atom, or an iodine atom). An alkoxy group (acetoxy group, 201226627, alkoxy group, etc.), etc., is preferably a decyloxy group, an ethoxy group or a chlorine atom in terms of good reactivity. To represent a single bond, or a divalent organic group. The divalent organic group may, for example, be a substituted or unsubstituted aliphatic hydrocarbon group (for example, a stretching group, preferably a carbon number of 1 to a carbon number 8), a substituted or unsubstituted aromatic hydrocarbon group (for example, an extended aryl group). Preferably, carbon number 6 to carbon number 12), -Ο-, -S-, -SOr, -N(R)_(R: alkyl), -CO-, -NH-, -COO-, - CONH- or a group in which the groups are combined (for example, an alkoxy group, an alkyleneoxycarbonyl group, an alkylene group, or the like). Among them, in terms of the production of the compound, a stretching group, _〇_, or a combination of the groups is preferred. When it is a single bond, za which shows the general formula (3) is directly connected with Si. m represents an integer 〇 〜 2 η represents an integer of 1 to 3 and satisfies the relationship of ^ + m = 3. Wherein m is preferably 〇~1. η is preferably 2 to 3. The decane coupling agent to be used may, for example, be γ-glycidoxypropyltriethoxy sulphur, γ-glycidoxypropyltrimethoxy oxysulphate, glycidoxypropyl fluorenyldiacetate. Oxydecane, hydrazine-glycidoxypropyl-decyldimethoxy decane, 2-(3,4.epoxycyclohexyl)ethyltrimethoxy decane, vinyltrimethoxydecane, vinyl three Ethoxy decane, allyl dimethoxy decane, 3-trimethoxy decyl propyl methacrylate, 3 - (acryloxy) propyl trimethoxy decane, 2 · (3, 4- Epoxycyclohexyl)ethyltrimethoxy decane, aminopropyltrimethoxydecane, aminopropyltriethoxydecane, 3-(2-aminoethyl)aminopropyltrimethoxydecane , 3_mercapto acryloxypropylmethyl decyloxydecane, 3-mercaptopropyltrimethoxydecane, 201226627 »/〆〆〆νγ** 3-mercaptopropylmethyldimethoxy Decane, 3-mercaptopropyltriethoxydecane, vinyl trioxane, and the like. (Constituent for forming a base layer) The composition for forming a base layer contains the above-mentioned composition; The content of the Shixiyuan coupling agent in the base layer-forming composition is not particularly limited, and the operability, the ease of controlling the layer thickness of the underlayer, and the adhesion strength of the produced metal film are relatively The total amount of the composition is preferably from 0.1% by mass to 100% by mass, more preferably from 5% by mass to 2% by mass. (Polymerizable compound containing fluorene = fluorenyl group) The base layer forming composition and/or the polymer layer forming composition to be described later contain a polymerizable compound containing a fluorene = fluorenyl group. The polymerizable compound having a Ρ=0 group is a compound having a fluorene = fluorenyl group (phosphoryl group i and a polymerizable group). When the composition for forming a base layer contains the compound, the coupling agent with a decane via a p=0 group A strong coherent bond is formed between the polymer layers described later, and a compound having a polymerizable group can form a strong covalent bond between the polymer layers described later. The polymerizable compound having a P = 0 group may contain a p = fluorenyl group and a polymerizable group. Examples of the conjugate group include a radical polymerizable group and a cationic polymerization 1" In the case of reactivity, a radical polymerization base is preferred. Examples of the radical polymerizable group include mercaptopropenyl group, propylene 201226627 fluorenyl group, itaconate group, and butyl group. An acrylate group, a methacrylate group, a maleate group, a stupid vinyl group, a vinyl group, a acrylamide group, a methacrylamide group, etc. Among them, a mercapto propylene group or a propylene group is preferred. Sulfhydryl, vinyl, stupid The alkenyl group, the acrylamide group, the mercapto acrylamide group, particularly preferably an acrylonitrile group, a mercapto propylene group or a styryl group. A preferred embodiment of the polymerizable compound containing a P = fluorenyl group is as follows: The compound represented by the formula (1): In the formula (1), in the formula (1), xa represents a polymerizable group. The definition of the polymerizable group is as described above.

La表不單鍵或二價有機基。有機基的定義盥上述lc 所示的有機基同義。 〃La is not a single bond or a divalent organic group. The definition of an organic group is synonymous with the organic group shown by the above lc. 〃

Ya表示氫原子、或不具有聚合性基的取代基。 不具有聚合性基的取代基例如可列舉:脂肪族煙基(例 )、芳香族烴基(例如芳基)或將該些基加以组合而 成的基4。另外,此取代基中,可含有_〇_、_c〇_、_nh_、 或將該些基加以組合而成的基等二價有機基。 人1土 w 1〜y,尤僅产^ 院基的具體例可列舉:甲基、乙基、丙基、丁基: 己基。烧基可為直鏈狀’亦可為分支狀’還可為環法 13 201226627Ya represents a hydrogen atom or a substituent having no polymerizable group. Examples of the substituent having no polymerizable group include an aliphatic nicotyl group (example), an aromatic hydrocarbon group (e.g., an aryl group), or a group 4 obtained by combining the groups. Further, the substituent may contain _〇_, _c〇_, _nh_, or a divalent organic group such as a group in which the groups are combined. Specific examples of the human soil 1 w y y, especially the siloxane base: methyl group, ethyl group, propyl group, butyl group: hexyl group. The base may be linear or 'branched' or may be a ring method 13 201226627

佳為直鏈綠。絲可概祕、絲、找基等取代。 芳基的碳數較佳為6〜14’更佳為6〜1()。芳基的具體 例可列舉苯基、1_萘基、2_萘基。芳基可被絲、烧氧基、 芳氧基等取代。 p表示1 3的整數,q表示〇〜2的整數,p及q滿足 P + q=3的關係式。其中,P較佳為1或2,q較佳為i或 2 〇 通式(1)所不的化合物的較佳形態可列舉:通式(2) 所示的化合物。 [化3] 通式(2) (xb—〇—Lb—〇kiL(〇Ya) q 通式⑵+ ’ Ya、p及q的定義與通式 基同義。 通式(2)中’ Xb表示丙烯醯基或曱基丙烯醯基。 通式⑺t,Lb表示伸絲、伸餘基、伸烧氧幾 基、伸烷基羰氧基、或將該些基組合而成的基。 伸烧基、伸烧氧基、伸院氧幾基、伸烧基_炭氧基的伸 烧基部分的具體例可列舉:亞甲基、伸乙基' 伸丙基、伸 丁基、伸戊基、伸己基。伸絲可為直鏈狀,亦可為分支 狀’較佳為直鏈伸炫基。 其中,就金屬膜的密接性更優異的方面而言,較佳為 201226627Good for straight green. Silk can be replaced by secret, silk, and base. The carbon number of the aryl group is preferably 6 to 14' or more preferably 6 to 1 (). Specific examples of the aryl group include a phenyl group, a 1-naphthyl group, and a 2-naphthyl group. The aryl group may be substituted by a silk, an alkoxy group, an aryloxy group or the like. p represents an integer of 1 3, q represents an integer of 〇 〜 2, and p and q satisfy a relational expression of P + q = 3. Among them, P is preferably 1 or 2, and q is preferably i or 2 较佳. A preferred embodiment of the compound of the formula (1) is a compound represented by the formula (2). General formula (2) (xb-〇-Lb-〇kiL(〇Ya) q General formula (2)+ 'The definitions of Ya, p and q are synonymous with the general formula. In the general formula (2), 'Xb indicates Acryl fluorenyl or fluorenyl acrylonitrile. General formula (7) t, Lb represents a stretching wire, a stretching residue, an extended oxygen group, an alkylcarbonyloxy group, or a combination of these groups. Specific examples of the stretching group of the exfoliating oxygen group, the exchanging oxygen group, and the exfoliating group-carbonoxy group include a methylene group, an exoethyl group, a propyl group, a butyl group, and a pentyl group. The stretched wire may be a linear chain or a branched shape, preferably a linear stretchable base. Among them, in terms of more excellent adhesion of the metal film, it is preferably 201226627

Lb含有伸炫•基部分的碳數為2個以上的伸烷基、伸垸氧 基、伸烷氧幾基、或伸烷基羰氧基,其碳數更佳為3〜12 個,特佳為5〜8個。 含P = 0基的聚合性化合物例如可直接使用日本化藥 (股)製造的KAYAMER系列、尤尼化學(Uni-Chemical) (股)製造的Phosmer系列等市售的化合物,亦可使用新 合成的化合物。 以下’表示含p=〇基的聚合性化合物的具體例,但 本發明中可用的單體並不限定於該些聚合性化合物。 [化4]Lb contains 2 or more alkyl groups, an extended oxy group, an alkoxy group or an alkylcarbonyl group, and the carbon number is preferably 3 to 12, Good for 5 to 8. For the polymerizable compound containing a P = 0 group, for example, a commercially available compound such as the KAYAMER series manufactured by Nippon Kayaku Co., Ltd. or the Phosmer series manufactured by Uni-Chemical Co., Ltd. can be used as it is, or a new synthesis can be used. compound of. The following 'is a specific example of the polymerizable compound containing p=fluorenyl group, but the monomer usable in the present invention is not limited to these polymerizable compounds. [Chemical 4]

在基底層形成用組成物中含有含P = 0基的聚合性化 合物時’就基底層與基板的密接性及基底層與聚合物層的 密接性的方面而言,基底層形成用組成物中的含P = 〇基 的聚合性化合物與矽烷偶合劑的質量比(含p=〇基的聚 15 201226627 合性化合物/矽烷偶合劑),較佳為1/1〇〇〇〜1/2,更佳 〇 〜1/3 ° ‘、、、 (溶劑) 基底層形成用組成物中根據需要可含有溶劑。 溶劑只要是使所㈣的钱偶合劑轉或 劑,則並無特別限制,例如可列舉:水、醇系溶劑 办 乙醇、丙醇等)、酮系溶劑(例如丙酮、曱基乙基 酉同、環戊酮等)、醢胺系溶劑(例如甲醯胺、二甲基胺 Ν-甲基吼錢酮等)、腈系溶劑(例如乙猜、丙猜等= 系溶劑(例如乙酸甲酯、乙酸乙酯等)、碳 曰 如碳酸,曱S旨、碳酸二乙S旨等)、_容劑(例如例 丙二醇等)、鹵素系溶劑(例如氣仿等)等。 基底層形成驗成物中的溶劑的含 就操作性、基底層的層厚控制 '及穩定性的 佳為以基底層形成用組成物中的石夕烧偶合劑及=較 的聚合性化合物的總濃度為〇1質量%〜5旦 基 調整溶劑量。 質里/〇的方式 基底層形成用組成物中根據需要可含 :例如酸、驗等PH值調節劑(例如乙酸1酸:::劑 硝酸、硫酸、碳酸、草酸、甲酸等酸 4、 鉀、碳酸氫納、碳酸納、氨水等驗))等魏納、氧氧化 (基板) 本發明所用的基板1〇亦可使用先前已 板,較佳為可承受後述處理條件的基板1When the polymerizable compound containing a P=0 group is contained in the base layer forming composition, the base layer forming composition is used in terms of the adhesion between the underlying layer and the substrate and the adhesion between the underlying layer and the polymer layer. The mass ratio of the polymerizable compound containing P = fluorenyl group to the decane coupling agent (poly 15 201226627 conjugated compound/decane coupling agent containing p = fluorenyl group) is preferably 1/1 〇〇〇 1/2 1/2. More preferably, 1/3 ° ', , (solvent) The base layer-forming composition may contain a solvent as needed. The solvent is not particularly limited as long as it is a reagent coupling agent of (4), and examples thereof include water, an alcohol solvent, ethanol, and propanol, and a ketone solvent (for example, acetone or mercaptoethyl hydrazine). , cyclopentanone, etc.), guanamine-based solvents (such as formamidine, dimethylamine oxime-methyl ketone, etc.), nitrile-based solvents (eg, B., C., etc. = solvent) (eg methyl acetate) , ethyl acetate, etc., carbonic acid, such as carbonic acid, 曱S, carbonic acid, etc.), _ a bulking agent (for example, propylene glycol, etc.), a halogen type solvent (for example, gas, etc.). The operability of the solvent in the basal layer formation test, the layer thickness control of the basal layer, and the stability are preferably the sulphur coupling agent and the comparative polymerizable compound in the basal layer forming composition. The total concentration is 〇1% by mass to 5 hrs to adjust the amount of solvent. The composition of the base layer forming layer may include, for example, a pH adjusting agent such as an acid or an assay (for example, acetic acid: acid: sulfuric acid, sulfuric acid, carbonic acid, oxalic acid, formic acid, etc., 4, potassium). , sodium bicarbonate, sodium carbonate, ammonia, etc.)), etc. Weiner, oxygen oxidation (substrate) The substrate 1 used in the present invention may also be a previously used substrate, preferably a substrate 1 capable of withstanding the processing conditions described later.

16 201226627 jyyyupif 膠基板、玻璃基板、陶瓷基板、金屬基板等。其中,就鱼 上述矽烷偶合劑的反應性優異的方面而言,較佳為 舉:玻璃基板、陶瓷基板。 ^塑膠基板的材料可列舉:熱硬化性樹脂(例如環氧樹 脂、酚樹脂、聚醯亞胺樹脂、聚酯樹脂等)或熱塑性樹脂 (例如苯氧樹脂、聚醚砜、聚砜、聚苯砜等)。 曰 陶瓷基板的材料例如可列舉:氧化鋁、氮化鋁、氧化 錯、矽、氮化矽、礙化矽等。 玻璃基板的材料例如可列舉:鈉玻璃、鉀玻璃、硼矽 玻璃、石英玻璃、鋁矽玻璃、鉛玻璃等。 金屬基板的材料例如可列舉:銘、鋅、銅等。 '考慮到在半導體封裝、各種電氣配線基板等中的用 途,基板較佳為藉由JIS B 0601 ( 1994年)、10點平均高 度法測定的表面粗糙度Rz為5 〇 〇 n m以下,更佳為〗〇 〇 ^ 以下,尤佳為50 nm以下,最佳為20 nm以下。下限並無 特別限定,較佳為5 nm左右,更佳為〇。 另外,基板與本發明中所形成的金屬膜不同,在基板 的單面或兩面可具有金屬配線^金屬配線可在基板的表面 形成為,案狀,亦可在整面上形成。代表性的金屬配線可 列舉··藉由利用蝕刻處理的減成法形成的金屬配線、或藉 由利用電鑛的半加成法形成的金屬配線,可使用藉由任一 種工法形成的金屬配線。 構成金屬配線的材料例如可列舉:銅、銀、錫、鈀、 金、鎳、鉻、鎢、銦、鋅或鎵等。 17 201226627 (步驟Ο)的順序) 使基板與包含具有反應性基的矽烷偶合劑的基底層形 成用組成物接觸的方法並無特別限定,可列舉··在基底層 形成用組成物巾浸潰基㈣方法、或將基底層形成^組^ 物塗佈於基板上的方法等。就容碰制所得的基底層的厚 度的方面而言,較佳為將組成物塗佈於基板上的方法。 塗佈的方法並無特別限制,具體的方法可使用:使用 雙輥塗佈機、狹縫塗佈機、氣刀塗佈機、線棒塗佈機、滑 動漏斗(slide h〇Pper)、喷霧塗佈機、刮刀式塗佈機(blade coater)、刮刀塗佈機(d()etGr⑺齡)、擠壓式塗佈機(—隨 coater)、反向輥塗佈機、轉印輥(transfer r〇u)塗佈機、 擠出塗佈機(extrusion coater)、簾幕式塗佈機(⑶他比 coater)、浸塗機、模塗機、凹版輥式塗佈機的塗敷法、擠 出塗佈法、輥塗佈法等公知的方法。 在使基底層形成用組成物與基板接觸時,就基底層盘 f合物層的密接性、及所形成的金屬膜的密接性的方面: 基底層形成用組成物在基板±的塗佈量以魏偶合劑 里換昇rh較佳為G.GG1 g/m2〜〇丨g/m2,更佳為讀15咖2 〜0.05 g/m2 〇 在使基底層形成用組成物與基板接觸後,根據需要可 對基板進行加熱處理以除去溶劑。 、加熱條件根據組成物中所含有的溶劑適當選擇最佳的 /皿度’力口熱/皿度較佳30\:〜20(TC ’力口熱時間較佳為i 分鐘〜1小時。 201226627 υρ-if r而且較佳為,在使基底層形成用組成物與基板接觸後 j或進行上述加熱處理後)’使用溶劑清洗基板。藉由利用 vj進行α洗,可除去堆積在基板上的未反應的石夕烧偶合 劑,結果所形成的金屬膜的密接性進一步提高。 所使用的溶劑根據矽烷偶合劑的種類進行適當選擇, 例如可列舉·’ ±述基底層形朗組成物巾可含有的溶劑。 其中’較佳為可列舉:水、醇系溶劑、嗣系溶劑,特佳為 使用:異丙醇、甲醇、乙醇、環細、環己綱。 另外,在使基底層形成用組成物與基板接觸後(或利 用溶劑清洗後)’根據需要可將基板進行乾燥。乾燥條件並 無特別限制’健為在溫度2(rc〜·。C下,進行時間為i 分鐘〜1小時的乾燥。 (含矽烷偶合劑的基底層) 、根據上述順序形成的含矽烷偶合劑的基底層主要由上 述石夕烧偶合細彡成’並發揮出作為後述的聚合物層的基底 層=作用。此基底層處於基板與聚合物層之間,藉此兩者 的密接性進—步提高,結果金屬膜的密接性亦提高。 基底層的厚度並無特別限制,較佳為所使用的魏偶 合劑的一分子膜〜數分子左右的厚度。 基底層對於水的接觸角可藉由所使用的石夕烧偶合劑等 來控制。藉由進行使用基底層形成用組成物的石夕燒偶合處 理,,觀察基板表面的接觸角的值變化,而可調查基底層是 否形成於基板表面。另外,藉由基底層的構成成分、與構 成聚合物層的聚合物成分的組合,基板表面的較佳接觸角 19 201226627 會發生變化。 另外’接觸角是指靜態接觸角,使用利用液滴法 觸角測定裝置而在27°C下峡 此處,「靜態接觸角a 指狀態不因流動等而隨時間發生變化的條件下的接觸^疋 基底層中較佳為含有上述矽烷偶合劑作為主成分。主 成分是指矽烧偶合劑的含量相對於基底層總量而為5〇 量%以上,較佳為70質量%以上。最大值為1〇〇質量%買 另外,基底層形成用組成物中含有含ρ = 〇基的聚入 性化合物時,基底層亦含有含ρ==0基的聚合性化合物。Q <步驟(2):聚合物層形成步驟> 步驟(2)是在步驟(1)中所得的基底層上,使包含 聚合物的聚合物層形成用組成物接觸後,供給能量而形1 聚合物層的步驟。上述聚合物具有聚合性基、及與鍍敷觸 媒或其則驅物形成相互作用的官能基。此步驟中,藉由對 具有基底層及聚合物層形成用組成物的基板供給能量,而 使矽烷偶合劑的反應性基、聚合物中的聚合性基、及含p =〇基的聚合性化合物中的聚合性基活化,而形成聚合物 間的父聯、或在基底層與聚合物層之間形成共價鍵等。結 果’聚合物層與基底層間更牢固地密接。 更具體而言,如圖1 (B)所示般,在含矽烷偶合劑的 基底層12上形成聚合物層i4a。 首先,對本步驟中所使用的材料(聚合物、聚合物層 形成用組成物等)進行詳細闡述,然後對此步驟的順序進 行詳細闡述。16 201226627 jyyyupif Glue substrate, glass substrate, ceramic substrate, metal substrate, etc. Among them, in terms of excellent reactivity of the fish decane coupling agent, a glass substrate or a ceramic substrate is preferred. ^The material of the plastic substrate may be a thermosetting resin (for example, an epoxy resin, a phenol resin, a polyimide resin, a polyester resin, or the like) or a thermoplastic resin (for example, a phenoxy resin, a polyethersulfone, a polysulfone, or a polyphenylene). Sulfone, etc.). The material of the ceramic substrate may, for example, be alumina, aluminum nitride, oxidized ox, ruthenium, tantalum nitride or ruthenium. Examples of the material of the glass substrate include soda glass, potassium glass, borosilicate glass, quartz glass, aluminum bismuth glass, lead glass, and the like. Examples of the material of the metal substrate include, for example, zinc, copper, and the like. In consideration of applications in semiconductor packages, various wiring boards, and the like, the substrate preferably has a surface roughness Rz of 5 〇〇 nm or less as measured by JIS B 0601 (1994) and a 10-point average height method. It is 〇〇 以下 ^ below, especially preferably below 50 nm, and most preferably below 20 nm. The lower limit is not particularly limited, and is preferably about 5 nm, more preferably 〇. Further, unlike the metal film formed in the present invention, the substrate may have a metal wiring on one or both sides of the substrate. The metal wiring may be formed on the surface of the substrate in a case-like manner or may be formed on the entire surface. As a typical metal wiring, a metal wiring formed by a subtractive method using an etching treatment or a metal wiring formed by a semi-additive method using an electric ore can be used, and a metal wiring formed by any of the methods can be used. . Examples of the material constituting the metal wiring include copper, silver, tin, palladium, gold, nickel, chromium, tungsten, indium, zinc or gallium. 17 201226627 (Step Ο) The method of bringing the substrate into contact with the underlayer forming composition containing the decane coupling agent having a reactive group is not particularly limited, and the composition for forming the underlayer layer is impregnated. The method of the base (4) or the method of applying a base layer forming composition to a substrate. The method of applying the composition onto the substrate is preferred in terms of the thickness of the underlayer obtained by the impact. The coating method is not particularly limited, and a specific method can be used: using a two-roll coater, a slit coater, an air knife coater, a bar coater, a slide funnel (slide h〇Pper), and a spray Mist coater, blade coater, knife coater (d() etGr (7) age), extrusion coater (-with coater), reverse roll coater, transfer roll ( Transfer r〇u) coating machine, extrusion coater, curtain coater (3) other than coater, dip coater, die coater, gravure roll coater A known method such as an extrusion coating method or a roll coating method. When the base layer forming composition is brought into contact with the substrate, the adhesion between the underlying layer disk composition layer and the adhesion of the formed metal film is as follows: the coating amount of the underlying layer forming composition on the substrate ± It is preferable to change the rh in the Wei coupler to G.GG1 g/m2 to 〇丨g/m2, more preferably to read 15 coffee 2 to 0.05 g/m2. After the base layer forming composition is brought into contact with the substrate, The substrate may be subjected to heat treatment as needed to remove the solvent. The heating condition is appropriately selected according to the solvent contained in the composition. The heat/dish degree is preferably 30\:~20 (TC 'the heat time of the mouth is preferably i minutes to 1 hour. 201226627 Υρ-if r is preferably after the base layer forming composition is brought into contact with the substrate, j or after the heat treatment, and the substrate is cleaned using a solvent. By performing α washing with vj, the unreacted ceramsite coupling agent deposited on the substrate can be removed, and as a result, the adhesion of the formed metal film is further improved. The solvent to be used is appropriately selected depending on the type of the decane coupling agent, and for example, a solvent which can be contained in the base layer-shaped composition towel can be mentioned. Among them, preferred are water, an alcohol solvent, and an oxime solvent, and particularly preferably used: isopropyl alcohol, methanol, ethanol, cyclohexane, and cycloheximide. Further, after the base layer forming composition is brought into contact with the substrate (or after washing with a solvent), the substrate can be dried as needed. The drying conditions are not particularly limited to 'drying at a temperature of 2 (rc~·.C, drying time is i minutes to 1 hour. (base layer containing a decane coupling agent), a decane-containing coupling agent formed according to the above procedure The base layer is mainly composed of the above-mentioned smelting coupling and is formed as a base layer of a polymer layer to be described later. The base layer is between the substrate and the polymer layer, whereby the adhesion between the two is advanced. When the step is increased, the adhesion of the metal film is also improved. The thickness of the underlayer is not particularly limited, and is preferably a thickness of one molecule to a few molecules of the Wei coupler used. The contact angle of the substrate to water can be borrowed. The ceramsite coupling agent or the like to be used is controlled by the ceramsite coupling treatment using the composition for forming the underlayer layer, and the change in the value of the contact angle on the surface of the substrate is observed, and it is possible to investigate whether or not the underlayer is formed on the substrate. In addition, by the combination of the constituent components of the underlayer and the polymer component constituting the polymer layer, the preferred contact angle of the substrate surface 19 201226627 changes. Refers to the static contact angle, using the droplet method of the antennae measuring device at 27 ° C. Here, "static contact angle a refers to the contact in the basal layer under conditions where the state does not change with time due to flow or the like. Preferably, the decane coupling agent is contained as a main component. The main component means that the content of the samarium coupling agent is 5 〇 or more, preferably 70% by mass or more, based on the total amount of the undercoat layer. The maximum value is 1 〇〇 mass. In addition, when the base layer forming composition contains a polyvalent compound containing a ρ = fluorenyl group, the underlayer also contains a polymerizable compound containing ρ = =0. Q < Step (2): Polymer layer (Step of forming) Step (2) is a step of supplying a polymer-forming polymer layer-forming composition onto the base layer obtained in the step (1), and supplying energy to form a polymer layer. a polymerizable group and a functional group that interacts with a plating catalyst or a precursor thereof. In this step, by supplying energy to a substrate having a composition for forming a base layer and a polymer layer, a decane couple is provided. Reactive group, polymer The polymerizable group and the polymerizable group in the polymerizable compound containing p = fluorenyl group are activated to form a parent bond between the polymers or to form a covalent bond between the base layer and the polymer layer. The layer is more firmly adhered to the substrate layer. More specifically, as shown in Fig. 1(B), a polymer layer i4a is formed on the base layer 12 containing a decane coupling agent. First, the material used in this step is used. (Polymer, polymer layer forming composition, etc.) will be explained in detail, and the order of this step will be described in detail.

S 20 201226627 jyyyvpif (聚合物) 本發明中所使用的聚合物具有聚合性基、及與鑛敷觸 媒或其前驅物相互作用的官能基(以下,適當稱為相互作 用性基)。 以下,對聚合物所含的官能基、或其特性進行詳細闡 述。 聚合性基是藉由供給能量而在聚合物彼此、或聚合物 與基底層之間形成化學鍵的官能基。聚合性基的定義與上 述含P = 0基的聚合性化合物中的聚合性基同義,較佳形 態亦相同。 相互作用性基疋與鍍敷觸媒或其前驅物相互作用的官 能基(配位性基、金屬離子吸附性基),可使用能與鍍敷觸 媒,其前驅物形成靜電相互作用(electrostatic interaction) 的S旎基、或能與鍍敷觸媒或其前驅物形成配位的含氮官 能基、含硫官能基、含氧官能基等。 相互作用性基例如亦可列舉:非解離性官能基(藉由 解離而不生成質子的官能基)等。 相互作用性基更具體可列舉:胺基、醯胺基、醯亞胺 ,腺基、二級胺基、铵基、脉基、三嗓環、三唾環、苯 并三唑基、咪唑基、苯并咪唑基、喹啉基、吡啶基、嘧啶 基、吡嗪基、唑啉基、喹噁啉基、嘌呤基、三嗪基、哌啶 基、哌嗪基、。比咯啶基、吡唑基、苯胺基、包含烷基胺結 構的基、包含異二聚氰酸結構的基、破基、亞確基、偶氮 基、重氮基、疊氮基、氰基、氰酸酯基(R_0_CN)等含氮S 20 201226627 jyyyvpif (Polymer) The polymer used in the present invention has a polymerizable group and a functional group (hereinafter referred to as an interaction group as appropriate) which interacts with the mineral catalyst or its precursor. Hereinafter, the functional group contained in the polymer or its characteristics will be described in detail. The polymerizable group is a functional group which forms a chemical bond between the polymers or the polymer and the underlayer by supplying energy. The definition of the polymerizable group is synonymous with the polymerizable group in the above polymerizable compound having a P = 0 group, and the preferred form is also the same. The functional group (coordinating group, metal ion-adsorbing group) which interacts with the plating catalyst or its precursor can be used to form electrostatic interaction with the plating catalyst and its precursor (electrostatic The S-group of the interaction, or a nitrogen-containing functional group, a sulfur-containing functional group, an oxygen-containing functional group, or the like which can form a coordination with the plating catalyst or its precursor. Examples of the interactive group include a non-dissociable functional group (a functional group which does not form a proton by dissociation) and the like. More specifically, the interactive group may be exemplified by an amine group, a decylamino group, a quinone imine group, a gland group, a secondary amine group, an ammonium group, a sulfhydryl group, a triterpene ring, a tris- ring ring, a benzotriazolyl group, and an imidazolyl group. , benzimidazolyl, quinolyl, pyridyl, pyrimidinyl, pyrazinyl, oxazolinyl, quinoxalinyl, fluorenyl, triazinyl, piperidinyl, piperazinyl. Pyrrolidinyl, pyrazolyl, anilino, a group containing an alkylamine structure, a group comprising a heterodiisocyanate structure, a cleavage group, an anthracene group, an azo group, a diazo group, an azide group, a cyanogen group Base, cyanate group (R_0_CN), etc.

201226627 jyyyyjyiL 官能基;醚基、羥基、酚性羥基、羧基、碳酸酯基、羰基、 酯基、包含N-氧化物結構的基、包含s_氧化物結構的基、 包含N-羥基結構的基等含氧官能基;噻吩基、硫醇基、硫 脲基、硫代三聚氰酸基、苯并噻唑基、巯基三嗪基、硫醚 基、硫酮基、亞砜基、砜基、亞硫酸基、包含磺醯亞胺結 構=基、包含只小示牛シ二クΛ鹽結構的基、磺酸基包 含%酸酯結構的基等含硫官能基;示只7才—卜基、示只 7才口 7彡K基、膦基、包含磷酸酯結構的基等含磷官能 基,包含氣、溴等鹵素原子的基等,可採用鹽結構的官能 基中,亦可使用該些官能基的鹽。 其中,就極性高、對鍍敷觸媒或其前驅物等的吸附功 能f的方面而言,特佳為羧基、磺酸基、磷酸基、及硼酸 基等離子性極性基,或喊,或氰基,尤佳為祕或氰基。 作為相互作用性基的該些官能基在聚合物中可含有2 種以上。 另外,上述醚基較佳為以下式(χ)所示的聚氧伸烷 式(X ) * -(L40)n-Rc 式(X)中,L4表示伸烷基,RC表示烷基。n表示1 〜30的數。*表示鍵合位置。 伸烷基較佳為碳數1〜碳數3,具體而言,較佳為可列 舉伸乙基、伸丙基。烧基較佳為魏i〜碳數1〇,具體而201226627 jyyyyjyiL functional group; ether group, hydroxyl group, phenolic hydroxyl group, carboxyl group, carbonate group, carbonyl group, ester group, group containing N-oxide structure, group containing s_oxide structure, group containing N-hydroxy structure An oxygen-containing functional group; a thienyl group, a thiol group, a thiourea group, a thiotrisocyanate group, a benzothiazolyl group, a decyltriazinyl group, a thioether group, a thioketone group, a sulfoxide group, a sulfone group, Sulfite group, sulfur-containing functional group including a sulfonimide structure= group, a group containing only a small burdock diterpene salt structure, a sulfonic acid group containing a % acid ester structure, and the like; And a phosphorus-containing functional group such as a 7-member K group, a phosphino group, a group containing a phosphate structure, a group containing a halogen atom such as a gas or a bromine, etc., and a functional group having a salt structure may be used. Salts of some functional groups. Among them, in terms of the high polarity, the adsorption function f of the plating catalyst or its precursor, etc., it is particularly preferably a carboxyl group, a sulfonic acid group, a phosphoric acid group, and a boronic acid group, or a cation or a cyanide group. Base, especially good for secret or cyano. These functional groups as an interactive group may contain two or more kinds in the polymer. Further, the above ether group is preferably a polyoxyalkylene represented by the following formula (χ): (X) * - (L40) n-Rc In the formula (X), L4 represents an alkylene group, and RC represents an alkyl group. n represents a number from 1 to 30. * indicates the bonding position. The alkylene group is preferably a carbon number of 1 to a carbon number of 3, and specifically, it is preferably an ethyl group and a propyl group. The base is preferably Wei i ~ carbon number 1 〇, specifically

S 22 201226627^ ’車父佳為3〜 言,較佳為可列舉曱基、乙基。 η表示1〜30的數,鲂4么 。另外,η表示平均S 22 201226627^ 'Car father is 3~, preferably 曱 group, ethyl group. η represents a number from 1 to 30, 鲂4. In addition, η represents the average

值,此數值可藉由公知的方法(核 resonance,NMR))等進行測定。 無特別限制’較佳為1000 ^20萬以下。特別是就聚 聚合物的重量平均分子量並 以上70萬以下’更佳為2000以上2〇 合感光度的觀點而言’較佳為2〇〇⑽ 另外,聚合物的聚合度並無特 聚物以上的聚合物,更佳為二十聚物’,佳為使用十 較佳為七千聚物以下,更佳為三千聚物^聚合物。並且, 聚物以下,特佳為一千聚物以下。 ,尤佳為二千 (較佳形態1)The value can be measured by a known method (nuclear resonance, NMR) or the like. There is no particular limitation, and it is preferably 1000^200,000 or less. In particular, the weight average molecular weight of the polypolymer is more than 700,000 or less, more preferably 2,000 or more, and 2 is preferably 2 Å (10). Further, the degree of polymerization of the polymer has no specific polymer. The above polymer is more preferably an eicosomer', and it is preferably used in an amount of preferably less than seven mer polymers, more preferably a tributary polymer. Further, the polymer is preferably one or less of a polymer or less. , especially good for two thousand (preferred form 1)

Η生基單元)、 元(以下亦適 聚合物的第1較佳形態可列舉:包含1女 下述式(a) 另外’單元是指重 [化5]The twin base unit) and the element (hereinafter, the first preferred embodiment of the polymer is as follows: one female is as follows: (a) and the other is a heavy weight.

23 201226627 上述式(a)及式(b)中,Ri〜R5分別獨立表示氫原 子、或經取代或未經取代的烷基。 R1〜R5為經取代或未經取代的烷基時,未經取代的烷 基可列舉·甲基、乙基、丙基、或丁基。另外,經取代的 烷基可列舉:被曱氧基、氯原子、溴原子、或氟原子等取 代的曱基、乙基、丙基、丁基。 另外,R1較佳為氫原子、曱基、或被溴原子取代而 的曱基。 R較佳為氫原子、曱基、或被溴原子取代而成的曱基。 R3較佳為氫原子。 R4較佳為氫原子。 R5較佳為氫原子、曱基、或被溴原子取代而成的甲基。 〇β上述式(a)及式(b)中,X、γ、及2分別獨立表示 單鍵、或者經取代或未經取代的二價有機基。二價有機基 可列舉:經取代或未經取代的脂肪族烴基(例如伸烷基。 較佳為碳數1〜碳數8)、經取代或未經取代的芳香族烴基 (例如伸芳基。較佳為碳數ό〜碳數12)、-0-、-S-、-S02-、 •N(R)- (R :烷基)、_c〇·、_ΝΗ· c〇〇、c〇NH 或將 該些基組合而成的基(例如伸烷氧基、伸烷氧羰基、伸烷 基羰氧基等)等。 經取代或未經取代的脂肪族烴基較佳為,亞曱基、伸 乙基、伸丙基、或伸丁基、或該些基被曱氧基、氯原子、 溴原子、或氟原子等取代而成的基。23 201226627 In the above formula (a) and formula (b), Ri to R5 each independently represent a hydrogen atom or a substituted or unsubstituted alkyl group. When R1 to R5 are a substituted or unsubstituted alkyl group, the unsubstituted alkyl group may, for example, be a methyl group, an ethyl group, a propyl group or a butyl group. Further, examples of the substituted alkyl group include a mercapto group, an ethyl group, a propyl group and a butyl group substituted by a decyloxy group, a chlorine atom, a bromine atom or a fluorine atom. Further, R1 is preferably a hydrogen atom, a fluorenyl group or a fluorenyl group substituted by a bromine atom. R is preferably a hydrogen atom, a fluorenyl group or a fluorenyl group substituted by a bromine atom. R3 is preferably a hydrogen atom. R4 is preferably a hydrogen atom. R5 is preferably a hydrogen atom, a fluorenyl group or a methyl group substituted by a bromine atom. In the above formula (a) and formula (b), X, γ, and 2 each independently represent a single bond or a substituted or unsubstituted divalent organic group. The divalent organic group may, for example, be a substituted or unsubstituted aliphatic hydrocarbon group (for example, an alkylene group, preferably a carbon number of 1 to a carbon number of 8), a substituted or unsubstituted aromatic hydrocarbon group (for example, an extended aryl group). Preferably, the carbon number ό~ carbon number 12), -0-, -S-, -S02-, •N(R)-(R:alkyl), _c〇·, _ΝΗ·c〇〇, c〇 NH or a group in which the groups are combined (for example, an alkoxy group, an alkyloxycarbonyl group, an alkylcarbonyloxy group, etc.). The substituted or unsubstituted aliphatic hydrocarbon group is preferably an anthracenylene group, an extended ethyl group, a propyl group, or a butyl group, or the group is a decyloxy group, a chlorine atom, a bromine atom, or a fluorine atom. Substituted base.

S 24 201226627^ ^yyyyjyif 經取代或未經取代的芳香族烴基較佳為,未經取代的 伸苯基、或被甲氧基、氣原子、填原子、絲原子等取代 而成的伸苯基。 X、Y、及Z較佳為可列舉:單鍵、酯基(_C00_)、 醯胺基(__CONH_)、喊(·〇_)、或經取代或未經取代的 芳香族烴基等,更佳為單鍵、酯基(_c〇〇_)、醯胺基 (-CONH-)。 上述式(a)及式(b)中,Li及L2分別獨立表示單鍵、 或者經取代或未經取代的二價有機基。二價有機基的定義 與上i^X、Y、及Z中所述的二價有機基同義。 L·較佳為脂肪族烴基、或具有胺基甲酸酯鍵或脲鍵的 二價有機基(例如脂肪族烴基),更佳為具有胺基甲酸酯鍵 的一價有機基,其中較佳為總破數丨〜碳數9者。另外此 處’L1的總碳數是指L1所示的經取代或未經取代的二價有 機基所含的總碳原子數。 L1的結構更具體而言,較佳為下述式(M )、或式(i_2) 所示的結構。 [化6] 式(1-1) 式(1-2) 上述式(M)及式(1-2)中,Ra及圮分別獨立為使 25 201226627 —^上〆裊丄 用選自由碳原子、氫原子、及氧原子所組成群中的2種以 上原子而开>成的一價有機基。較佳為可列舉:經取代咬未 經取代的亞甲基、伸乙基、伸丙基、或伸丁基、或環氧乙 、二環氧乙烷基、三環氧乙烷基、四環氧乙烷基、二 %氧丙烷基、三環氧丙烷基、四環氧丙烷基。 另外,L較佳為單鍵、或者直鏈、分支、或環狀伸烧 基务香族基、或者將該些基組合而成的基。此伸烧基與 芳香族基組合而成的基還可介隔醚基、酯基、醯胺基、^ 基甲酸酯基、脲基。其中,L2較佳為單鍵、或總碳數為j 15,特佳為未經取代。另外此處,l2的總碳數是指l2 所示的經取代或未經取代的二價有機基所含的總碳原子 數。 具體可列舉.亞甲基、伸乙基、伸丙基、伸丁基、伸 苯基,及該些基被甲氧基、羥基、氯原子、溴原子、氟原 子等取代而成的基,以及該些基組合而成的基。 上述式(b)中,W表示與鍍敷觸媒或其前驅物相互 作用的官能基。此官能基的定義如上所述。 上述式(a)所示的聚合性基單元的較佳形態可列舉: 下述式(c)所示的單元。 [化7]S 24 201226627^^yyyyjyif The substituted or unsubstituted aromatic hydrocarbon group is preferably an unsubstituted phenyl group or a phenyl group substituted by a methoxy group, a gas atom, a filler atom, a silk atom or the like. . X, Y, and Z are preferably a single bond, an ester group (_C00_), an amidino group (__CONH_), a shry (·〇_), or a substituted or unsubstituted aromatic hydrocarbon group, etc., more preferably It is a single bond, an ester group (_c〇〇_), a guanamine group (-CONH-). In the above formulae (a) and (b), Li and L2 each independently represent a single bond or a substituted or unsubstituted divalent organic group. The definition of the divalent organic group is synonymous with the divalent organic group described in the above i^X, Y, and Z. L· is preferably an aliphatic hydrocarbon group, or a divalent organic group having a urethane bond or a urea bond (for example, an aliphatic hydrocarbon group), more preferably a monovalent organic group having a urethane bond, wherein Jia always broke the number of ~ 碳 9 carbon number. Further, the total carbon number of 'L1' herein means the total number of carbon atoms contained in the substituted or unsubstituted divalent organic group represented by L1. More specifically, the structure of L1 is preferably a structure represented by the following formula (M) or formula (i_2). Formula (1-1) Formula (1-2) In the above formula (M) and formula (1-2), Ra and 圮 are independently used such that 25 201226627 is selected from carbon atoms. A monovalent organic group formed by opening two or more atoms of a hydrogen atom and a group of oxygen atoms. Preferably, it is a substituted methylene group, an extended ethyl group, a propyl group, or a butyl group, or an epoxy group, a dioxirane group, a trioxirane group, or a tetra-substituted ethylene group. Ethylene oxide group, di% oxypropyl group, tripropylene oxide group, tetrapropylene oxide group. Further, L is preferably a single bond, or a linear, branched or cyclic extended aromatic group or a group in which the groups are combined. The group in which the alkylene group is combined with the aromatic group may also intervene in an ether group, an ester group, a decyl group, a carbazate group, or a ureido group. Wherein L2 is preferably a single bond or a total carbon number of j 15, particularly preferably unsubstituted. Further, here, the total carbon number of l2 means the total number of carbon atoms contained in the substituted or unsubstituted divalent organic group represented by l2. Specific examples thereof include a methylene group, an ethylidene group, a propyl group, a butyl group, a phenyl group, and a group in which the group is substituted with a methoxy group, a hydroxyl group, a chlorine atom, a bromine atom, a fluorine atom or the like. And a combination of the bases. In the above formula (b), W represents a functional group which interacts with a plating catalyst or a precursor thereof. The definition of this functional group is as described above. A preferred embodiment of the polymerizable unit represented by the above formula (a) is a unit represented by the following formula (c). [Chemistry 7]

S 26 201226627 jyyyupifS 26 201226627 jyyyupif

式(c)中,R〗、R2、Z及與式(a)所示的單元中 ,各基的定義相同。A表示氧原子、或NR(R表示氫原子 ,烧基’ ^佳為氫原子或碳數1〜碳數5的未經取代的烧 基。)。 式(c)所示的單元的較佳形態可列舉:式(d)所示 的單元。 [化8] 〇人τIn the formula (c), R, R2, Z and the units represented by the formula (a) have the same definitions of the respective groups. A represents an oxygen atom or NR (R represents a hydrogen atom, and the alkyl group is preferably a hydrogen atom or an unsubstituted alkyl group having a carbon number of 1 to a carbon number of 5). A preferred embodiment of the unit represented by the formula (c) is a unit represented by the formula (d). [化8] 〇人τ

〇丫 A R2人 式(d) 各其^^中^^^與式⑷所示的單元中的 二目同。Α&τ表不氧原子、或顺(&表示氫 原子或絲,祕為氫肝或錢丨〜碳數5的未經取代 27 201226627 的烧基。)。 上述式(d)中,T較佳為氧原子。 另外,上述式(c)及式(d)中,L1較佳為未經取代 的伸烷基、或具有胺基曱酸酯鍵或脲鍵的二價有機基,更 佳為具有胺基曱酸酯鍵的二價有機基,特佳為總碳數為1 〜9的二價有機基。 另外,式(b)所示的相互作用性基單元的較佳形態可 列舉:下述式(e )所示的單元。 [化9]〇丫 A R2 person (d) Each of the ^^^^^ is the same as the unit shown in the formula (4). Α & τ is not an oxygen atom, or cis (& represents hydrogen atom or silk, secret hydrogen hydrogen or money 丨 ~ carbon number 5 unsubstituted 27 201226627 burnt base.). In the above formula (d), T is preferably an oxygen atom. Further, in the above formula (c) and formula (d), L1 is preferably an unsubstituted alkylene group, or a divalent organic group having an amino phthalate bond or a urea bond, and more preferably an amine group. The divalent organic group of the acid ester bond is particularly preferably a divalent organic group having a total carbon number of 1 to 9. Further, a preferred embodiment of the interactive group unit represented by the formula (b) is a unit represented by the following formula (e). [Chemistry 9]

式(e) 上述式(e)中,R5及L2與式(b)所示的單元中的各 基的定義相同。Q表示氧原子、或NR' (R’表示氫原子、 或烷基,較佳為氫原子、或碳數1〜碳數5的未經取代的 院基。)。 另外,式(e)中的L2較佳為直鏈、分支、或環狀伸 烧基、芳香族基、或該些基組合而成的基。 特別是式(e)中,較佳為L2中的與相互作用性基的 連結部位為具有直鏈、分支、或環狀伸烷基的二價有機基,In the above formula (e), R5 and L2 are the same as defined in each unit of the formula (b). Q represents an oxygen atom or NR' (R' represents a hydrogen atom or an alkyl group, preferably a hydrogen atom or an unsubstituted substituent having a carbon number of 1 to a carbon number of 5.). Further, L2 in the formula (e) is preferably a linear, branched, or cyclic stretching group, an aromatic group, or a group in which the groups are combined. Particularly, in the formula (e), it is preferred that the linking moiety with the interactive group in L2 is a divalent organic group having a linear, branched or cyclic alkyl group.

28 S 201226627 其中,較佳為此二價有機基的總碳數為1〜10。 另外,其他的較佳形態較佳為,式(e) 用”的連結部位為具有芳香族基二有: 土八中此一知的有機基較佳為總碳數為6〜15。 ΑαΪΪΪ合性基單元姉於聚合物巾的财私,較佳 為3有5莫耳%〜50莫耳%,更佳為5 / 若上述聚合性基單元小於5莫耳%,則有反 0 f耳/〇。 聚合性)下降的情況,若上述聚合性基較超石2生耳 /〇,則合成時容易凝膠化而難以合成。 冥耳 另外,上述相互作用性基單元就對鍍敷觸媒或直此跡 物的吸附性的觀點而言’相對於聚n:則區 莫耳…耳%,更佳為丨。莫以 (較佳形態2) 聚合物的第2較佳形態可列舉:包含下 (B)、及式(C)所示的單元的共聚物。 (A)、式 [化 10]28 S 201226627 wherein, preferably, the total carbon number of the divalent organic group is from 1 to 10. Further, in another preferred embodiment, it is preferred that the linking portion of the formula (e) has an aromatic group. The organic group known in the earth is preferably a total carbon number of 6 to 15. The base unit is entangled in the financial content of the polymer towel, preferably 3 to 5 mol% to 50 mol%, more preferably 5 / if the above polymerizable unit is less than 5 mol%, there is an anti-f f When the polymerizable group is lowered, the polymerizable group is more likely to be gelled during synthesis than the super stone 2, and it is difficult to synthesize during synthesis. In addition, the above-mentioned interactive base unit is resistant to plating. From the viewpoint of the adsorptivity of the medium or the straight material, it is 'relative to poly n: the area is mol%, more preferably 丨. More preferably (the preferred form 2), the second preferred embodiment of the polymer is exemplified : a copolymer comprising the units shown in the following (B) and formula (C). (A), formula [10]

(c) 29 201226627 々使ί (A)所7^的單元與上述式⑴所示的單元相同, 各基的說明亦相同。 所- ^ 2)/斤示的單元中的R5、X及L2與上述式⑻ 所不,早70中的R5、X及L2相同,各基的說明亦相同。 皮二上:)中的Wa表不除了後述v所示的親水性基或 ”刚驅物基外的與鍍敷觸媒或其前驅物形成相互作用的官 能基。 -弋(C)中,R分別獨立表示氳原子、或者經取代或 未經取代的絲。絲的定義與上述R1〜R5所示的烧基同 義。 &式(C)中,u表示單鍵、或者經取代或未經取代的 二價有機基。二财機基的定義與上述Χ、γ及Z所示的 一&有機基同義。 一 &式(C)中,L3表示單鍵、或者經取代或未經取代的 二價有機基。二價有機基的定義與上述Ll及L2所示的二 價有機基同義。 式(C)中,v表示親水性基或其前驅物基。親水性 基/、要疋表現親水性的基,則並無特別限定,例如可列舉: ,基、羧酸基等。另外,親水性基的前驅物基是指藉由特 定處理(例如藉由酸或鹼進行處理)而產生親水性基的基, 例如可列舉:被THP (2_四氫吡喃基)保護的羧基等。 親水性基就聚合物層容易與各種水性處理液或鍍敷液 潤濕,本發明的效果進一步表現的方面而言,較佳為離子 性極性基。離子性極性基具體可列舉:羧酸基、續酸基、 201226627 场酉夂基刪义基。其中,就適度的酸性(不分解其他官能 基)的方面而言’較佳為羧酸基。 特,疋式(c)所示的單元中,就在適度酸性(不分 解^他s絲)、祕水純巾表魏樣,將水乾燥後藉 由孩狀結構而容易表現疏水性的方面而言,較佳為V為幾 酸基’且在L3與V的連結部具有4員〜8員環結構。此處, 4員二8員環結構可列舉:環丁基、環戊基、環己基、環庚 基、裱辛基、笨基,其中較佳為環己基、苯基。(c) 29 201226627 The unit of ί (A) is the same as the unit shown by the above formula (1), and the description of each base is also the same. R5, X and L2 in the unit of - ^ 2) / kg are the same as the above formula (8), and R5, X and L2 in the early 70 are the same, and the description of each group is also the same. The Wa in the skin of the skin:) is not a hydrophilic group or a functional group other than the rigid substrate which forms an interaction with the plating catalyst or its precursor, in the case of 弋(C), R independently represents a halogen atom or a substituted or unsubstituted filament. The definition of the filament is synonymous with the above-mentioned alkyl group represented by R1 to R5. In the formula (C), u represents a single bond, or substituted or not The substituted divalent organic group. The definition of the divalent organic group is synonymous with the above-mentioned &, γ, and Z. The organic group is the same as the above. In the formula (C), L3 represents a single bond, or substituted or not. a substituted divalent organic group. The definition of the divalent organic group is synonymous with the above-mentioned divalent organic group represented by L1 and L2. In the formula (C), v represents a hydrophilic group or a precursor thereof. Hydrophilic group /, The group which exhibits hydrophilicity is not particularly limited, and examples thereof include a group, a carboxylic acid group, etc. Further, a precursor group of a hydrophilic group means a treatment by a specific treatment (for example, by an acid or a base) The group which generates a hydrophilic group is, for example, a carboxyl group protected by THP (2-tetrahydropyranyl group). In view of the fact that the polymer layer is easily wetted with various aqueous treatment liquids or plating solutions, the effect of the present invention is further expressed as an ionic polar group. Specific examples of the ionic polar group include a carboxylic acid group and a continuous acid group. Base, 201226627 field thiol-based group. Among them, in terms of moderate acidity (does not decompose other functional groups), it is preferably a carboxylic acid group. In particular, in the unit shown by formula (c), In the case of moderately acidic (not decomposing ^ s silk), the secret water pure towel, the water is dried, and the water is easily expressed by the child-like structure, preferably V is a few acid groups' and The connection portion between L3 and V has a ring structure of 4 to 8 members. Here, the ring structure of the 4 member and 8 member rings may be exemplified by cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, anthracenyl, and stupid. Among them, a cyclohexyl group and a phenyl group are preferred.

另外’式(C)所示的單元巾,就在適度酸性(不分 解其他官絲)、難水驗巾表現親水性,將水乾燥後夢 由長鍵絲結構而容絲現疏水性的方面而言,亦較佳^ V為紐H L3 _長為6軒〜18原子。此處W 的”式(c)中的U與V的距離,較佳為U” 之間以6原子〜18原子的範圍隔開。 6、 子〜14原子,尤佳為6原子〜12原子。魏更佳為6原 二聚合物的第2較佳形態中的各單元的較佳含量如 式(A)所示的單元就反應性(硬 合成時凝膠化的抑制的方面而言 ^性)及 單元,較佳為含有5莫耳%〜5()===中的所有 〜30莫弄°/。。 、。更仏為5莫耳0/〇 式(B)所示的單元就對鍍敷觸 性的觀點而言’相對於聚合物中的^/、刖驅物的吸附 5莫耳%〜75莫耳%,更佳為 =早疋’較佳為含有 、今/〇〜70莫耳%。 31In addition, the unit towel shown in the formula (C) is moderately acidic (does not decompose other official filaments), and the water-repellent towel exhibits hydrophilicity. After drying the water, the dream is made of a long-bonded silk structure. In terms of it, it is also better to ^ V for New H L3 _ long for 6 Xuan ~ 18 atoms. Here, the distance between U and V in the formula (c) of W, preferably U", is separated by a range of 6 atoms to 18 atoms. 6, sub ~ 14 atoms, especially preferably 6 atoms ~ 12 atoms. The preferred content of each unit in the second preferred embodiment of the virgin dipolymer is such that the unit represented by the formula (A) is reactive (in terms of inhibition of gelation during hard synthesis) and Preferably, the unit contains all of the -30% of the 5% and 5% of the 5%. . ,. Further, the unit shown in the form of 5 mol/0 (B) is in the view of the plating touchability, relative to the adsorption of ^/, ytterbium in the polymer, 5 mol% to 75 mol. %, more preferably = early 疋 'preferably contains, present / 〇 ~ 70 mol%. 31

201226627 •J 的方it) m單元就水溶_顯影性㈣濕密接性 的方面而δ,相對於聚合物中的 要 莫耳。/。^娜,_ 2。㈣〜6()二,= 30莫耳%〜50莫耳%。 吳今。特佳為 另外’聚合物的第2較佳形態中的離子性極性價⑽ 性極性基為幾酸基時為酸值),較佳為i 5 _ 〇 mn^g’Mh7mm〇1/g〜5〇mm〇i/g,^uK9 mmo g 4·〇 mm〇i/g。藉由離子性極性價為此範圍而可 使水溶液中的㈣性賦予及濕熱經時時的密接力降低的抑 制同時成立。 上述聚合物的具體例,可使用日本專利特開 2009-0G754G <公報的段落[〇 i Q6]〜段落[Q丨丨2]所記載的聚 合物作為具有自由基聚合性基與相互作用性基的聚合物。 另外’具有自由基聚合性基與離子性極性基的聚合物可使 用曰本專利特開2006-135271號公報的段落[〇〇65]〜段落 [0070]所記載的聚合物。具有自由基聚合性基、相互作用 性基、以及離子性極性基的聚合物可使用US2010-080964 號的段落[0〇3〇]〜段落[0108]所記載的聚合物。 另外’亦可列舉如以下的聚合物。201226627 • The square of J) The m unit is δ in terms of water solubility_developability (iv) wet adhesion, relative to the mole in the polymer. /. ^Na, _ 2. (d) ~ 6 () two, = 30 mol % ~ 50 mol%. Wu Jin. It is particularly preferable that the ionic polar valence (10) polar group in the second preferred embodiment of the polymer is an acid value when it is a few acid groups, and preferably i 5 _ 〇 mn ^ g ' Mh 7 mm 〇 1 / g 〜 5〇mm〇i/g, ^uK9 mmo g 4·〇mm〇i/g. When the ionic polar valence is in this range, the (four) property in the aqueous solution and the suppression of the decrease in the adhesion strength during the moist heat are simultaneously established. As a specific example of the above-mentioned polymer, a polymer described in paragraph [〇i Q6] to paragraph [Q丨丨2] of JP-A-2009-0G754G < Base polymer. Further, the polymer having a radical polymerizable group and an ionic polar group can be used as described in paragraph [〇〇65] to [0070] of JP-A-2006-135271. As the polymer having a radical polymerizable group, an interactive group, and an ionic polar group, the polymer described in paragraphs [0〇3〇] to [0108] of US2010-080964 can be used. Further, a polymer such as the following may also be mentioned.

32 S 201226627 jy^yyjpif [化η]32 S 201226627 jy^yyjpif [化η]

33 201226627 [化 12]33 201226627 [Chem. 12]

(聚合物的合成方法) 上述聚合物的合成方法並無特別限定,所使用的單體 亦可為市售品或組合公知的合成方法而合成者。例如可參 照專利公開2009-7662號的段落[0120]〜段落[0164]所記載 的方法等,而合成上述聚合物。 更具體而言,在聚合性基為自由基聚合性基時,聚合 物的合成方法較佳為可列舉以下的方法。 可列舉:i)將具有自由基聚合性基的單體、具有相互(Method for synthesizing polymer) The method for synthesizing the above polymer is not particularly limited, and the monomer to be used may be a commercially available product or a combination of a known synthesis method. For example, the above polymer can be synthesized by referring to the method described in paragraphs [0120] to [0164] of Patent Publication No. 2009-7662. More specifically, when the polymerizable group is a radical polymerizable group, the method for synthesizing the polymer is preferably the following method. There may be mentioned: i) a monomer having a radical polymerizable group, having each other

S 34 201226627 ^yyyupif 作用性,的單體進行共聚合的方法;ϋ)使具有相互作用 性基的單體及具有自由基聚合性基前驅物的單體共聚合, 接著藉由驗等的處理而導入自由基聚合性基的方法;出) 使具有相互作用性基的單體及具有用以導入自由基聚合性 基的反應性基的單體絲合,而導人自由基聚合性基二方 法。 就合成適性的觀點而言,較佳方法為上述Η)及上述 111)的+方法。合成時的聚合反應的種類並無特別限定,較 佳為藉由自由基聚合進行。 另外,在合成包含上述式(A)、式(B)、及式(c) 所示,單元的絲物時’可錢具有親水性基或其前驅物 基的單體、具有除了親水性基或其前驅物基外的相互作用 性基的單體’藉由上述i)〜m)的方法合成所需的共聚物。 (聚合物層形成用組成物(被鍍敷層形成用組成物乃 聚合物層形成用組成物含有上述聚合物。 聚合物層形成用組成物中的聚合物的含量並無特別限 制,相對於組成物總量,較佳為2質量%〜5〇質量%,^ 佳為5質量%〜30質量%。若聚合物的含量為上述範圍内, 則組成物的操作性優異,且容易控制聚合物層的層厚。 較佳為聚合物層形成用組成物含有溶劑。 可使用的溶劑並無特別限定,例如可列舉基底層形成 用組成物中所使用的溶劑等。其中,較佳為水、醯胺系溶 、嗣糸/谷劑、腈系溶劑、碳酸g旨系溶劑、醇系溶劑,具 體而言,較佳為水、丙|同、二曱基乙醯胺、曱基乙基嗣、 35 201226627 環己酮、乙腈、丙腈、N-甲基吡咯烷酮、碳酸二甲酯、j 曱氧基-2-丙醇等。 -S 34 201226627 ^yyyupif A method for copolymerizing a monomer; ϋ) copolymerizing a monomer having an interactive group and a monomer having a radical polymerizable precursor, followed by treatment a method of introducing a radical polymerizable group; and a method of bonding a monomer having an interactive group and a monomer having a reactive group for introducing a radical polymerizable group, and introducing a radical polymerizable group method. From the viewpoint of synthetic suitability, the preferred method is the above-mentioned Η) and the above-mentioned 111). The type of the polymerization reaction at the time of the synthesis is not particularly limited, and it is preferably carried out by radical polymerization. Further, in the case of synthesizing a filament comprising the unit represented by the above formula (A), formula (B), and formula (c), a monomer having a hydrophilic group or a precursor group thereof may have a hydrophilic group. The monomer of the interactive group outside its precursor group 'synthesizes the desired copolymer by the above methods i) to m). (The composition for forming a polymer layer (the composition for forming a layer to be plated, the polymer layer forming composition contains the polymer. The content of the polymer in the polymer layer forming composition is not particularly limited, as opposed to The total amount of the composition is preferably 2% by mass to 5% by mass, and preferably 5% by mass to 30% by mass. When the content of the polymer is within the above range, the handleability of the composition is excellent, and the polymerization is easily controlled. The layer thickness of the layer of the material layer is preferably a solvent. The solvent to be used is not particularly limited, and examples thereof include a solvent used for the composition for forming a base layer, and the like. And a guanamine-based solution, a ruthenium/yellow agent, a nitrile-based solvent, a carbonic acid-based solvent, and an alcohol-based solvent. Specifically, water, propylene, the same, dimercaptoacetamide, decylethyl hydrazine are preferred. , 35 201226627 Cyclohexanone, acetonitrile, propionitrile, N-methylpyrrolidone, dimethyl carbonate, j-methoxy-2-propanol, etc. -

且谷易進行聚合物層的層厚的控 聚合物層形成用組成物中的溶劑的含量並無特別限 制,相對於組成物總量,鲂祛盔π麼真。^ 佳為70質量°/〇〜 則組成物的操作性優異, 制等。 (矽烷偶合劑) 聚合物層形成用組成物中根據需要可含有上述具有反 應性基的矽烷偶合劑。藉由含有矽烷偶合劑,基底層與聚 合物層的密接性會進-步提高’並且容^控制聚合物層的 膜物性。 所使用的矽烧偶合劑的種類如上所述,較佳形態亦相 同。 在聚合物層形成用組成物中含有矽烷偶合劑時,就操 作性、聚合物層與基底層的密接性更優異,及金屬膜的密 接性更優異等方面而言,聚合物層形成用組成物中的矽烷 偶合劑與聚合物的質量比(矽烧偶合劑/聚合物),較佳為 1/1000〜1/5,更佳為 1/100〜1/10。 (含P = 0基的聚合性化合物) 如上所述,基底層形成用組成物及/或後述聚合物層形 成用組成物中含有上述含p=o基的聚合性化合物。 在聚合物層形成用組成物含有此化合物時,經由p=0 基而與基底層之間形成牢固的相互作用。而且,經由聚合Further, the content of the solvent in the polymer layer forming composition of the polymer layer is not particularly limited, and the ruthenium is true with respect to the total amount of the composition. ^ Good for 70 mass ° / 〇 ~ The composition is excellent in handleability, system, etc. (decane coupling agent) The polymer layer-forming composition may contain the above-mentioned decane coupling agent having a reactive group as needed. By containing a decane coupling agent, the adhesion between the base layer and the polymer layer is further increased and the film properties of the polymer layer are controlled. The type of the smoldering coupling agent used is as described above, and the preferred embodiment is also the same. When a decane coupling agent is contained in the polymer layer-forming composition, the composition of the polymer layer is excellent in terms of workability, adhesion between the polymer layer and the underlayer, and adhesion of the metal film. The mass ratio of the decane coupling agent to the polymer (the oxime coupling agent/polymer) is preferably from 1/1000 to 1/5, more preferably from 1/100 to 1/10. (Polymerizable compound containing P = 0 group) As described above, the base layer-forming composition and/or the polymer layer-forming composition described later contain the above-mentioned p=o group-containing polymerizable compound. When the polymer layer forming composition contains the compound, a strong interaction with the underlayer is formed via the p=0 group. Moreover, via aggregation

S 36 201226627 =基與上述聚合物形成牢gj的共價鍵,*發揮出使基底層 與聚合物層之間的密接性提高的作用。 一 在聚合物層形成用組成物中含有含p==0基的聚人性 化合物時,就操作性、以及聚合物層對基底層的密接ς及 對金屬膜的密接性更優異的方面而言,聚合物層形成用組 成物中的含ρ=〇基的聚合性化合物與聚合物的質量比(含 Ρ=0基的聚合性化合物/聚合物),較佳為1/1〇〇〇〜1/5, 更佳為1/100〜1/10。 (步驟(2)的順序) 使聚合物層形成用組成物與基底層接觸的方法並無特 別限定’可列舉:在聚合物層形成用組成物中浸潰基板的 方法、或將聚合物層形成用組成物塗佈於基底層上的方法 等。就容易控制所得的聚合物層的厚度的方面而言,較佳 為將組成物塗佈於基板上的方法。 塗佈的方法可使用上述步驟(1)中所述的塗佈方法。 在使聚合物層形成用組成物與基底層接觸時,聚合物 層形成用組成物的塗佈量就與後述鐘敷觸媒或其前驅物的 充分的相互作用形成性的觀點而言,以固體成分換算計, 較佳為 0.1 g/m2〜10 g/m2,特佳為 〇 5 g/m2〜5 g/m2。 另外’本步驟中形成聚合物層時,根據需要,為了除 去基底層上的聚合物形成用組成物層中的溶劑’可實施乾 燥處理。例如在塗佈後,在2〇它〜40¾下放置0.5小時〜 2小時’而可將殘存的溶劑除去。 本步驟中的對基底層上的聚合物層形成用組成物供給 37 201226627 能量的能量供給方法,例如可使用加熱或曝光等輻射線照 射。例如可進行:利用紫外線(uv)燈、可見光線等的光 照射,利用加熱板等的加熱等。 進行曝光時的光源例如有,水銀燈、金屬鹵化物燈、 氙氣燈、化學燈、碳弧燈、發光二極體(LED,light emitting diode)燈等。放射線有:電子束、χ射線、離子束、遠紅 外線等。另外,亦可使用g線、i線、深紫外(Deep_uv) 光、高密度能量束(雷射束)。 進行加熱時,例如可使用:通常的加熱親、貼合機、 爱金機(hot stamp)、電熱板、熱能頭、雷射、送風乾燥機、 烘箱、加熱板、紅外線乾燥機、加熱轉筒等。 能量供給所需要的時間根據光源而不同,通常為 秒〜5小時之間。 ’ 另外’可將該些能量供給方法加以組合而供給。例如 可將曝光與加熱加以組合。 另外,進曝光供給能量日$ ’為了容易進行接枝聚合、 並且控制所生成的接枝聚合物的分解,其曝光功率較佳為 Η) η^η^8_ 的範圍,更佳為⑽錢m2〜薦 mJ/cm2的範圍。 另外,可藉由氮氣、氦氣、二氧化碳 置換===濃度控制為_ppm以下、較佳為進: ppm以下的環境中進行照射。 而根據需要可成圖錄供給能量。 接著’在能量供給後,可適當自能量供給後的組成物S 36 201226627 = The base forms a covalent bond with the above polymer, and * acts to improve the adhesion between the underlayer and the polymer layer. When the polymer layer-forming composition contains a poly-human compound having a p==0 group, the handleability and the adhesion between the polymer layer and the underlayer and the adhesion to the metal film are more excellent. The mass ratio of the ρ=fluorenyl group-containing polymerizable compound to the polymer in the polymer layer-forming composition (polymerizable compound/polymer containing Ρ=0 base) is preferably 1/1 〇〇〇~ 1/5, more preferably 1/100~1/10. (Step of Step (2)) The method of bringing the composition for forming a polymer layer into contact with the underlayer is not particularly limited, and examples thereof include a method of impregnating a substrate in a composition for forming a polymer layer, or a polymer layer. A method of forming a composition for coating on a base layer or the like. In terms of easily controlling the thickness of the obtained polymer layer, a method of applying a composition onto a substrate is preferred. The coating method can be carried out using the coating method described in the above step (1). When the polymer layer-forming composition is brought into contact with the underlayer, the coating amount of the polymer layer-forming composition is sufficient to form a structure of a sufficient interaction with a later-described catalyst or a precursor thereof. The solid content conversion is preferably 0.1 g/m 2 to 10 g/m 2 , and particularly preferably 〇 5 g/m 2 to 5 g/m 2 . Further, when the polymer layer is formed in this step, if necessary, a drying treatment may be carried out in order to remove the solvent in the composition layer for forming a polymer on the underlayer. For example, after coating, the remaining solvent can be removed by placing it at 2 Torr to 403⁄4 for 0.5 hour to 2 hours. The energy supply method for supplying energy to the polymer layer forming composition on the underlayer in this step can be irradiated with radiation such as heat or exposure. For example, it can be irradiated with light such as an ultraviolet (uv) lamp or visible light, or heated by a heating plate or the like. The light source for exposure is, for example, a mercury lamp, a metal halide lamp, a xenon lamp, a chemical lamp, a carbon arc lamp, a light emitting diode (LED) lamp, or the like. Radiation: electron beam, xenon ray, ion beam, far red line, etc. In addition, g-line, i-line, deep ultraviolet (Deep_uv) light, and high-density energy beam (laser beam) can also be used. For heating, for example, a usual heating pro, laminating machine, hot stamp, hot plate, thermal head, laser, air blow dryer, oven, heating plate, infrared dryer, heating drum Wait. The time required for energy supply varies depending on the light source, and is usually between seconds and 5 hours. The other energy supply methods can be combined and supplied. For example, exposure and heating can be combined. Further, the exposure supply energy day $' is preferably in the range of Η) η^η^8_ for the purpose of facilitating graft polymerization and controlling decomposition of the graft polymer formed, and more preferably (10) m2 ~ Recommended range of mJ/cm2. Further, the irradiation can be carried out in an environment in which the concentration of nitrogen gas, helium gas, carbon dioxide replacement === is controlled to be _ppm or less, preferably at least ppm. According to the needs, it can be used as a catalogue to supply energy. Then, after the energy supply, the composition can be appropriately supplied from the energy.

S 38 201226627 ==:::物=法法, ==儀、錢^== (聚合物層(被鍍敷層)) 板的==並無特別限制,就金屬膜對基 而3,較佳為°·。一。,更佳為 o.U/X6::r"^°·05^20^-- 耗心’聚。物層的表面粗财(Ra)就配線形狀及密 接強度的方面而言’較佳為請μιη〜〇 3卿,更佳為〇 〇2 μπι〜0.15 μιη。另外,表面粗縫度(Ra)是藉由非接觸式 干涉法,根據JIS B 0601 (20010120修訂)所記載的Ra, 使用SUrfcom 3000A (東京精密(股)製造)進行測定。 另外,聚合物層中的聚合物的含量相對於聚合物層總 量,較佳為2質量%〜1〇〇質量%,更佳為1〇質量%〜1〇〇 質量%的範圍。 <步驟(3):觸媒供給步驟> 步驟(3)是對步驟(2)中所得的聚合物層供給鍍敷 觸媒或其則驅物的步驟。本步驟中,聚合物層中的相互作 用性基根據其功能,會附著(吸附)所供給的鍍敷觸媒或 其前驅物。更具體而言,如圖1 (C)所示般,形成供給了 鍍敷觸媒或其前驅物的聚合物層14b。 39 201226627 減A二激:文觸媒或其前驅物可列舉後述步驟⑷中發 ⑽。田<理的觸媒或電極的功能的鍍敷觸媒或其前驅 ㈣纏觸媒或其前驅物根據步驟⑷巾的鑛敷處 、春 疋,較佳為無電解鍍敷觸媒或其前驅物。 前驅物本步驟中使用的材料(無電解鍍敷觸媒或其 =物#)進料細_,_對此麵_序進行詳細 (無電解鍍敷觸媒) 敷時= 觸媒只要是成為無電解鑛 能的金屬(Pi: ^ 舉.八有自我觸媒還原反應的觸媒功S 38 201226627 ==:::物=法法, ==仪,钱^== (polymer layer (coated layer)) The plate == is not particularly limited, as the metal film is based on the base, 3 Good for °·. One. More preferably, it is o.U/X6::r"^°·05^20^-- The surface roughness (Ra) of the layer is preferably in the form of wiring shape and adhesion strength, preferably μιη~〇3, more preferably 〇2 μπι~0.15 μιη. In addition, the surface roughness (Ra) is measured by a non-contact interferometry method according to the Ra described in JIS B 0601 (20010120), using a SUrfcom 3000A (manufactured by Tokyo Seimi Co., Ltd.). Further, the content of the polymer in the polymer layer is preferably from 2% by mass to 1% by mass based on the total amount of the polymer layer, more preferably from 1% by mass to 1% by mass. <Step (3): Catalyst Supply Step> Step (3) is a step of supplying a plating catalyst or a precursor thereof to the polymer layer obtained in the step (2). In this step, the interaction group in the polymer layer adheres (adsorbs) the supplied plating catalyst or its precursor depending on its function. More specifically, as shown in Fig. 1(C), a polymer layer 14b to which a plating catalyst or a precursor thereof is supplied is formed. 39 201226627 Subtracting A and Bistimulation: The catalyst or its precursors can be listed in the following step (4) (10). The plating catalyst or the precursor of the catalyst or electrode of the field or the precursor (4) the entangled medium or its precursor according to the mineral deposit of the step (4), spring, preferably electroless plating catalyst or Precursor. Precursor The material used in this step (electroless plating catalyst or its =#) feed fine _, _ this surface _ sequence detailed (electroless plating catalyst) when applied = catalyst as long as it becomes Electroless mineral energy metal (Pi: ^ 举. Eight catalysts with self-catalyst reduction reaction

Pt、AU、C〇f 列舉.Pd、Ag、Cu、Ni、Pt, AU, C〇f list. Pd, Ag, Cu, Ni,

Ag、Pd、Pt、iu。 就較高的觸媒功能而言,特佳為 藉由敷觸媒可使用金屬膠體。通常金屬膠體可 中,將金屬齙:、電的界面/舌性劑或帶電的保護劑的溶液 處所使用㈣還原而製作。金屬膠_帶電量可藉由此 的界面活性劑或保護劑來調節。 …、電解鍍敷觸媒前驅物) 化學反所用的無電解錢敷觸媒前驅物只要是可藉由 物,則可W為無電解鍍敷觸媒的無電解㈣觸媒前驅 解鍍敷觸^別限制地使用。主要是可使用作為上述無電 、列舉的金屬的金屬離子。作為無電解鑛敷觸 201226627 媒前驅物的金屬離子藉由還原反應而成為無電解鍍敷觸媒 的〇價金屬。作為無電解鍍敷觸媒前驅物的金屬離子被供 給至聚合物層後’在浸潰於無電解鍍敷浴中之前,可藉由 另外的還原反應而變化成〇價金屬而作為無電解鑛敷觸 媒。另外,可將無電解鍍敷觸媒前驅物直接浸潰於無電解 鍍敷浴,藉由無電解鍍敷浴中的還原劑而變化成金屬(無 電解鍍敷觸媒)。 ^ 作為無電解鍍敷觸媒前驅物的金屬離子較佳為使用金 ,鹽供給至聚合物層。所使㈣金屬鹽只要是溶解於適當 2劑而解離成金屬離子與驗(陰離子)的金屬鹽,則並 限制:列舉:M(N〇3)n、MCln、M2 義)為 等。金屬離子可較佳地使用上述 離成:金上離子。例如可列舉:岣離子、CU 為可多牙配# 、Μ離子、Pd^。其中’較佳 及觸媒功能的方面而言 ,較佳;Ag離子、'種二數 離子。 杈住馮Ag離子、Pd離子、cu 例之 (免)或其前驅物(纪離子)的^ f揮出作為鍍敷觸, 理時成為活性核岐金屬、’即發揮出在鑛敷』 並在鍍敷處理時發揮出作為核的:用鈀化合物若包1 疋’例如可列舉:⑬(11)趟、 用’則並無特別户 料,無電解鍵敷觸媒或其前堪物 201226627 ^ ^ ^ 作為較佳的其他例子。 使用銀離子時,可較佳地使用如以下所示的銀化人物 發生解離而成的銀離子。銀化合物的具體例可列^ ^酸 銀、乙酸銀、硫酸銀、碳酸銀、氰化銀、硫氰峻銀、氣化 銀、溴化銀、鉻酸銀、氯冉酸銀、水楊酸銀、二乙某二碚 代胺基甲酸銀、二乙基二硫代胺基曱酸銀、對曱笨/酸^ 其中,就水溶性的觀點而言,較佳為琐酸銀。 (其他觸媒) 本發明中,作為為了不對聚合物層進行無電解鍍敷而 直接進行電鍍而使用的觸媒,可使用0價金屬。此〇價金 >i^^j^:Pd>Ag>Cu>Ni>Pt^AU>Co ψ « ,可多牙配位的金屬,特別是就對相互作用性基的吸附(附 著)性、較高的觸媒功能的方面而言,較佳為pd、Ag、 Cu。 (水或有機溶劑) 如上所述的鍍敷觸媒或其前驅物較佳為製 溶液(醜觸舰)秘給至聚合漏。^散^ w鍍敷觸媒液的溶劑可使用水或有機溶劑。藉由含有有 機4蜊,錢敷觸媒或其前驅物對聚合物層的滲透性提高, 可使鑛敷觸媒或其前驅物有效地吸附於相互作用性基。 鑛敷觸媒液所使用的水較佳為不含雜質,就此種觀點 =言’較佳為使用反滲透⑽,^聰〇麵㈤水或 離子水、錢水、純化水等,特佳為使用去離子水或蒸Ag, Pd, Pt, iu. In terms of higher catalyst function, it is particularly preferable to use a metal colloid by means of a catalyst. Usually, the metal colloid can be produced by reducing the metal ruthenium, the electrical interface/tongue agent or the solution of the charged protective agent (4). The metal glue _ charge amount can be adjusted by the surfactant or the protective agent. ..., electrolytic plating catalyst precursor) The electroless nickel-free catalyst precursor used for chemical reaction can be electroless (4) catalyst precursor deplating touch as long as it can be used as an electroless plating catalyst. ^ Do not use it with restrictions. It is mainly possible to use metal ions as the above-mentioned electroless, enumerated metals. As a non-electrolytic mineral, the metal ion of the precursor of 201226627 is a valence metal which is an electroless plating catalyst by a reduction reaction. The metal ions as the electroless plating catalyst precursor are supplied to the polymer layer and can be changed into a valence metal by an additional reduction reaction before being immersed in the electroless plating bath as an electroless ore. Apply the catalyst. Further, the electroless plating catalyst precursor can be directly impregnated into the electroless plating bath and changed into a metal (electroless plating catalyst) by a reducing agent in the electroless plating bath. ^ As the metal ion of the electroless plating catalyst precursor, gold is preferably used, and the salt is supplied to the polymer layer. The (tetra) metal salt is a metal salt which is dissolved in a suitable two doses and is dissociated into a metal ion and an anion (anion), and is limited to: M(N〇3)n, MCln, M2). Metal ions can preferably be used as described above: gold ions. For example, cerium ions, CU can be multi-dentate #, strontium ions, Pd^. Among them, 'preferably and in terms of catalyst function, it is preferred; Ag ion, 'dimer ion. Hold the von Ag ion, Pd ion, cu case (free) or its precursor (Ji ion) as a plating touch, and then become an active nuclear ruthenium metal, 'that will play a role in mineral deposits' and In the case of the plating treatment, it is used as a core: if the palladium compound is packaged, 例如', for example, 13 (11) 趟, with 'there is no special household material, no electrolysis bond catalyst or its precursors 201226627 ^ ^ ^ As a better example. When silver ions are used, silver ions which are dissociated by a silvered person as shown below can be preferably used. Specific examples of the silver compound may be listed as silver acetate, silver acetate, silver sulfate, silver carbonate, silver cyanide, thiocyanate, silver vapor, silver bromide, silver chromate, silver chloroantimonate, salicylic acid. Silver, diethyl bis-dithiocarbamate, silver diethyldithiocarbamate, bismuth/acid. Among them, from the viewpoint of water solubility, silver citrate is preferred. (Other Catalyst) In the present invention, a zero-valent metal can be used as the catalyst used for direct plating without electroless plating of the polymer layer. The price of gold >i^^j^:Pd>Ag>Cu>Ni>Pt^AU>Co ψ « , metal capable of coordination with multiple teeth, especially adsorption (adhesion) to interactive groups In terms of higher catalyst function, it is preferably pd, Ag, or Cu. (Water or Organic Solvent) The plating catalyst or its precursor as described above is preferably a solution (ugly ship) secret to the polymerization leak. The solvent for the plating solution may be water or an organic solvent. By containing the organic catalyst, the permeability of the polymer or its precursor to the polymer layer is improved, and the mineral catalyst or its precursor can be efficiently adsorbed to the interactive group. The water used in the mineral-catalyzed liquid is preferably free of impurities. In this view, it is better to use reverse osmosis (10), 聪 〇 ( (5) water or ionized water, money water, purified water, etc. Use deionized water or steam

S 42 201226627 行:=液=有機溶劑只要是可對聚合物層進 灯滲透的“則並無特別限制。例如可使用:丙酮 '乙 醯乙酸甲酯、乙酿乙酸乙酷、_ 1 ' 7 ^τ 乙一醇二乙酸酯、環己酮、 乙醯基㈣、本乙嗣、2仆環己稀 酸醋、甘油三乙酸醋、二乙 :已酉同丙一知一乙 基鱗烧酮、碳酸二㈣、炫、N-曱 τ日一甲基溶纖劑等。 特別是就與鑛敷觸媒或其前驅物她^ 為丙綱、碳酸溶性有機溶劑,較佳 ^ τ丞,合纖劑、三乙二醇單曱醚、 二乙二醇二甲醚、二乙二醇二乙醚。 哔早 另外,分散液或溶液中,根據目的而可含有呈 劑。其他添加義如刊舉··膨_、或界面活等。口 (步驟(3)的順序) t 別限^鍍朗媒或其前驅物供給絲合物層的方法並無特 、例如可列舉:製備將金屬分散於適當的分散介質而成 的分散液、或藉由適當的溶劑溶解金屬鹽而製備包含已解 離的金屬離子的溶液,並將此分散液或麵(錄觸媒液 塗佈於聚合物層上的方法;級此分舰或歸中浸潰形 成有聚合物層的基板的方法等。 v 聚合物層與鍍敷觸媒液的接觸時間較佳為3〇秒〜Μ 小時左右’更佳為1分鐘〜1小時左右。 接觸時的鍍敷觸媒液的溫度較佳為5°c〜8(rc左右, 更佳為15°C〜60。(:左右。 43 201226627 W〆〆〆 如上所述,藉由使鍍敷觸媒或其前驅物接觸,而可利 用藉由如凡得瓦力般的分子間力的相互作用、如離子鍵般 靜電相互作用、或藉由利用孤立電子對的配位鍵的相互作 用,而使鍍敷觸媒或其前驅物吸附於聚合物層中的相互作 用性基》 就充分地進行此種吸附的觀點而言,链敷觸媒液中的 金屬濃度或金屬離子遭度較佳為0.0Q1質量%〜質量% 的範圍,更佳為0.005質量%〜30質量%的範圍。 〇 <步驟(4):鍍敷步驟〉 步驟(4)是對步驟⑶巾供給了峨觸媒或其前驅 物的聚合物層進行職’而於聚合物層上形成金屬膜的步 驟。藉由此步驟而形成的金屬膜具有優異的導電性、密接 性。,更具體而言,如圖i (D)所示般,於聚合物層州 上形成金屬膜16,而獲得積層體18。 本步驟中所進行的鍍敷處理的種類可列舉無電解鍍 敷、電料,上述步驟⑴巾’可根據與聚合物層之間形 成相互作用的鍍敷觸媒或其前驅物的功能而選擇。 其中,就於聚合物層中表現的混成結構的形成性及密 接性,高的方面而言’較佳為進行無電解鍍敷。另外,為 了獲彳于所4要的膜厚的金屬膜16,而於無電解鍍敷後接 進行電鍍是更佳的形態。 以下,對本步驟中適宜進行的鍍敷進行說明。 (無電解鍍敷) 無電解鍍敷是指使用溶解有欲析出的金屬離子的溶液S 42 201226627 Line: = liquid = organic solvent as long as it can penetrate the polymer layer into the lamp, there is no particular limitation. For example, acetone: ethyl acetate, ethyl acetate, _ 1 ' 7 ^τ Ethylene glycol diacetate, cyclohexanone, ethyl sulfonate (IV), acetamidine, 2 servant hexaacetic acid vinegar, glycerol triacetate vinegar, diethylene: bismuth, ethyl ketone , carbonic acid (four), dazzle, N-曱τ 日-methyl cellosolve, etc. Especially with mineral coating catalyst or its precursors, she is a C-class, carbonated organic solvent, preferably ^ τ 丞, A fiber, a triethylene glycol monoterpene ether, a diethylene glycol dimethyl ether, a diethylene glycol diethyl ether. In addition, in a dispersion or a solution, an agent may be contained depending on the purpose. · Expanding _, or interface activity, etc. Port (the order of step (3)) t The method of supplying the slab or its precursor to the silk layer is not particularly limited, for example, the preparation of dispersing the metal Preparing a solution containing dissociated metal ions by dispersing a suitable dispersion medium or dissolving a metal salt by a suitable solvent, and The dispersion or the surface (the method of applying the recording medium to the polymer layer; the method of subdividing or submerging the substrate on which the polymer layer is formed, etc. v. Polymer layer and plating catalyst liquid The contact time is preferably from 3 sec to Μ an hour or so, preferably from about 1 minute to about 1 hour. The temperature of the plating catalyst at the time of contact is preferably from 5 ° C to 8 (about rc, more preferably 15). °C~60. (: Left and right. 43 201226627 W〆〆〆 As described above, the interaction of intermolecular forces by van der Waals can be utilized by contacting the plating catalyst or its precursor The electrostatic interaction such as an ionic bond or the interaction of the plating catalyst or its precursor in the polymer layer by the interaction of the coordination bonds of the isolated electron pair is sufficiently performed. From the viewpoint of such adsorption, the metal concentration or the metal ion concentration in the chain-contacting catalyst liquid is preferably in the range of 0.0Q1% by mass to mass%, more preferably in the range of 0.005% by mass to 30% by mass. Step (4): Plating step 〉 Step (4) is to supply the ruthenium catalyst or its precursor to the step (3) towel The polymer layer of the object performs the step of forming a metal film on the polymer layer. The metal film formed by this step has excellent conductivity and adhesion. More specifically, as shown in FIG. As shown, the metal film 16 is formed on the polymer layer state to obtain the laminated body 18. The type of the plating treatment performed in this step may be electroless plating or electric material, and the above step (1) The polymer layer is selected to form an interaction between the plating catalyst or its precursor. Among them, the formability and adhesion of the hybrid structure expressed in the polymer layer are preferably 'higher Electroless plating is carried out, and in order to obtain the metal film 16 having a desired film thickness, it is more preferable to perform electroplating after electroless plating. Hereinafter, the plating which is suitably performed in this step will be described. (electroless plating) Electroless plating refers to the use of a solution in which metal ions to be precipitated are dissolved.

201226627^. jyyyKjpiL 作為鍍敷,藉由化學反應而使金屬析出的操作。 本步驟中的無電解鍍敷例如是將供給了無電解鍍敷觸 媒的基板進行水洗而將多餘的無電解鍍敷觸媒(金屬)除 去後,浸潰於無電解鍍敷浴中而進行。所使用的無電解鍍 敷浴可使用公知的無電解鍍敷浴。 另外,將供給了無電解鍍敷觸媒前驅物的基板,在無 電解鑛敷觸媒前驅物吸附或含浸於聚合物層的狀態下浸潰 於無電解鑛敷浴中時,將基板進行水洗而將多餘的前驅物 (金屬鹽等)除去後,浸潰於無電解鍍敷浴中。此時,於 無電解鍍敷浴中,進行鍍敷觸媒前驅物的還原以及接著進 行無電解鍍敷。此處所使用的無電解鍍敷浴亦與上述同樣 可使用公知的無電解鍍敷浴。 另外,無電解鍍敷觸媒前驅物的還原與使用如上所述 的無電解鍍敷液的形態不同,亦可準備觸媒活化液(還原 液),作為無電解鍍敷前的其他步驟來進行。觸媒活化液是 溶解有可將無電解鍍敷觸媒前驅物(主要是金屬離子)還 原成0價金屬的還原劑的溶液,相對於溶液總體,此還原 劑的濃度較佳為0.1質量%〜5〇質量%,更佳為i質量% 〜30質量%。還原劑可使用:硼氫化鈉、二曱基胺硼烷之 類的硼系還原劑,曱醛,次磷酸等還原劑。 浸潰時,較佳為將無電解錢敷觸媒或其前驅物接觸的 聚合物層表赌近的無電解鍍_媒或其前物的濃度保 持為固定,且一邊施加攪拌或揺動一邊浸潰。 通常的無電解鍍敷浴的組成除了溶劑胃(例如水)外’ 45 201226627 主要包含 穩定性提高的添加劑還原劑、3·使金屬離子的 分外,還可包含#。此鍍敷浴中,除了該些成 鑛敷:二狄劑等公知的添加物。 此方面而言,較佳必須為可溶解於水的溶劑,就 醇等醇類。為使用丙_等酮類,甲醇、乙醇、異丙 鉛 特, 添; 辞、用的金屬的種類已知有銅、錫 為銅、金二外、f’其中’就導電性的觀點而言 2 另外,根據上述金屬選擇最佳的還原劑 精由如此形成的無電解鑛敷 由鑛敷浴的金屬離子濃声 ㈣金屬㈣膜异可 又在鍍敷浴中的浸潰時間、或 =就導電性的觀點而言,較佳為W 以上,更佳為0.2μΓη〜2μιη。 μ 居推、二、由無電解錄敷所形成的金屬膜作為導 :2仃後述的電錄時,較佳為均勻地供給至少 上的膜。 另外,在鍍敷浴中的浸潰時間較佳為J分鐘〜6小時 左右,更佳為1分鐘〜3小時左右。 藉^以如上方式獲得的無電解鍍敷而成的金屬膜藉由 利用掃描型電子顯微鏡(SEM,scanning e丨ectron microscope)的剖面觀察而確認··於聚合物層中包含鍍敷 觸媒或錢敷金屬的微粒子以高密度分散,並且進—步於聚 合物層上析出鍍敷金屬。聚合物層與金屬膜的界面是樹脂201226627^. jyyyKjpiL As a plating, the metal is precipitated by a chemical reaction. In the electroless plating in this step, for example, the substrate to which the electroless plating catalyst is supplied is washed with water, and the excess electroless plating catalyst (metal) is removed, and then impregnated in the electroless plating bath. . A well-known electroless plating bath can be used for the electroless plating bath to be used. Further, the substrate to which the electroless plating catalyst precursor is supplied is subjected to water washing when the electroless ortho-catalyst precursor is adsorbed or impregnated in the polymer layer while being impregnated in the electroless mineral bath. After removing excess precursor (metal salt, etc.), it is immersed in an electroless plating bath. At this time, reduction of the plating catalyst precursor and subsequent electroless plating were carried out in an electroless plating bath. As the electroless plating bath used herein, a known electroless plating bath can be used in the same manner as described above. Further, the reduction of the electroless plating catalyst precursor may be carried out by using a catalyst activation liquid (reducing liquid) as an electroless plating solution as described above, and may be carried out as another step before electroless plating. . The catalyst activating solution is a solution in which a reducing agent capable of reducing an electroless plating catalyst precursor (mainly a metal ion) to a zero-valent metal is dissolved, and the concentration of the reducing agent is preferably 0.1% by mass based on the total solution. ~5〇% by mass, more preferably i% by mass to 30% by mass. As the reducing agent, a boron-based reducing agent such as sodium borohydride or dinonylamine borane, a reducing agent such as furfural or hypophosphorous acid can be used. In the case of impregnation, it is preferred that the concentration of the electroless plating medium or its precursor which is close to the polymer layer in contact with the electroless gold-free catalyst or its precursor is kept constant while stirring or stirring is applied. Immersion. The composition of a conventional electroless plating bath is in addition to the solvent stomach (e.g., water). 45 201226627 mainly contains an additive for reducing the stability of the additive, 3, and a metal ion, and may also contain #. In the plating bath, well-known additives such as the ore-forming agent: diene agent are included. In this respect, it is preferred to use a solvent which is soluble in water, such as an alcohol such as an alcohol. In order to use the ketones such as propylene and the like, methanol, ethanol, and isopropyl hydride are added. The types of metals used for vocabulary and use are known as copper, tin, copper, gold, and f', of which 'in terms of conductivity. 2 In addition, according to the above metal, the best reducing agent is selected from the electroless mineral deposit thus formed by the metal ion of the mineral bath, and the metal (four) metal film can be impregnated in the plating bath, or From the viewpoint of conductivity, it is preferably W or more, more preferably 0.2 μΓη to 2 μιη. The metal film formed by the electroless recording is preferably used to uniformly supply at least the film. Further, the impregnation time in the plating bath is preferably from about J minutes to about 6 hours, more preferably from about 1 minute to about 3 hours. The metal film obtained by electroless plating obtained as described above is confirmed by a cross-sectional observation by a scanning electron microscope (SEM) to include a plating catalyst or a polymer layer in the polymer layer. The metal-coated fine particles are dispersed at a high density, and the plating metal is precipitated on the polymer layer. The interface between the polymer layer and the metal film is resin

S 46 201226627 複合物與微粒子的混成狀態,因此即便聚合物層與金屬膜 的界面平滑,密接性亦良好。 (電鍍) 本步驟中’在上述步驟(3)中所供給的鍍敷觸媒或其 前驅物具有作為電極的功能時’可對供給了此觸媒或其前 驅物的聚合物層進行電鍍。 另外,在前述的無電解鍍敷後,將所形成的金屬膜作 為電極,可進一步進行電鍍。藉此可將與基板的密接性優 異的無電解鍍敷膜作為基礎層,並於其上容易形成具有新 的任意厚度的金屬膜。如此,在無電解鍍敷後進行電鍍, 藉此可將金屬膜形成為與目標對應的厚度,因此適合將金 屬膜用於各種用途。 電鐘的方法可使用先前公知的方法。另外,電鍍所用 的金屬可列舉:銅、鉻、錯、鎳、金、銀、錫 '鋅等,就 導電性的觀點而言,較佳為銅、金、銀,更佳為銅。 ,另外,藉由電鍍而得的金屬膜的膜厚可藉由調整鍍敷 浴中所含的金屬濃度、或電流密度等來控制。 另外’應用於通常的電氣配、線等中時,金屬膜的膜厚 就導電性的觀點而言,較佳為〇.5 μπι以上,更佳為!、爪 〜30μιη。 师 得越窄 厚度變 不限定 另外,電氣配線的厚度是,電氣配線的線寬變 (即越微細化),則為了維持縱橫比而使電氣配線的 得越薄。因此,藉由電鍍而形成的金屬祺的層厚並 於上述層厚,可任意設定。 47 201226627 <積層體> 藉由經過上述步驟(1)〜步驟(4),而可獲得如圖1 (D)所示的依序具有基板1〇、含矽烷偶合劑的基底層12、 聚合物層14b、及金屬膜16的積層體18 (附金屬膜的積; 體)。 ^ 所得的積層體18例如使用於金屬配線基板用途,更具 體而言,可應用於印刷配線板、抗電磁波膜、塗佈膜、2 層包銅層板(CCL ’ Copper Clad Laminate)材料、電氣配 線用材料等各種電子裝置用途。 <任意步驟:加熱步驟> 在上述鍍敷步驟後,根據需要可對具有金屬膜的積層 體進行加熱處理(加熱步驟)。有時在鍍敷處理後進行加熱 處理,而藉由鍍敷步驟形成的金屬膜(鍍敷膜)的密接性 進一步提高。 另外,藉由鍍敷步驟實施無電解鍍敷處理與電鍍處理 時,可在無電解鍍敷處理後實施此加熱步驟, 處理後進行此加熱處理。 加熱步驟中的加熱條件根據所使用的聚合物或金屬膜 ^材料而不同,就使金屬膜的密接性進-步提高的方面而 言’加熱溫度較佳為8(rc〜2〇(rc,更佳為1〇〇ΐ〜ι4〇<^。 ^另外,加熱時間就生產性及密接性提高的方面而言, 較佳為5分鐘〜2小時,更佳為3〇分鐘〜i小時。 另外,本加熱步驟中,可連續進行2次以 的加熱處理。S 46 201226627 The state of the composite and the fine particles is mixed. Therefore, even if the interface between the polymer layer and the metal film is smooth, the adhesion is good. (Electroplating) In this step, when the plating catalyst or its precursor supplied in the above step (3) has a function as an electrode, the polymer layer to which the catalyst or its precursor is supplied can be plated. Further, after the electroless plating described above, the formed metal film is used as an electrode, and further electroplating can be performed. Thereby, an electroless plating film excellent in adhesion to the substrate can be used as a base layer, and a metal film having a new arbitrary thickness can be easily formed thereon. Thus, electroplating is performed after electroless plating, whereby the metal film can be formed to have a thickness corresponding to the target, and therefore it is suitable to use the metal film for various purposes. The method of the electric clock can use a previously known method. Further, examples of the metal used for the plating include copper, chromium, erbium, nickel, gold, silver, tin, and zinc. From the viewpoint of conductivity, copper, gold, and silver are preferable, and copper is more preferable. Further, the film thickness of the metal film obtained by electroplating can be controlled by adjusting the metal concentration, current density, and the like contained in the plating bath. Further, when applied to a general electrical wiring, a wire or the like, the film thickness of the metal film is preferably 〇.5 μπι or more from the viewpoint of conductivity, and more preferably! , claws ~ 30μιη. The thickness of the electric wiring is not limited. The thickness of the electric wiring is such that the line width of the electric wiring is changed (that is, the finer the electric wiring), and the electric wiring is made thinner in order to maintain the aspect ratio. Therefore, the layer thickness of the metal tantalum formed by electroplating can be arbitrarily set in addition to the above layer thickness. 47 201226627 <Laminated body> By the above steps (1) to (4), the substrate layer 12 having the substrate 1〇 and the decane-containing coupling agent as shown in Fig. 1(D) can be obtained. The polymer layer 14b and the layered body 18 of the metal film 16 (product of a metal film; body). The obtained laminated body 18 is used, for example, for a metal wiring substrate, and more specifically, can be applied to a printed wiring board, an electromagnetic wave resistant film, a coated film, a two-layer copper clad laminate (CCL 'Copper Clad Laminate) material, and electrical Various electronic device applications such as wiring materials. <Optional Step: Heating Step> After the plating step described above, the laminate having the metal film may be subjected to heat treatment (heating step) as needed. The heat treatment may be performed after the plating treatment, and the adhesion of the metal film (plating film) formed by the plating step is further improved. Further, when the electroless plating treatment and the plating treatment are carried out by the plating step, the heating step may be carried out after the electroless plating treatment, and the heat treatment may be performed after the treatment. The heating condition in the heating step differs depending on the polymer or metal film material used, and the heating temperature is preferably 8 (rc~2〇(rc,) in terms of improving the adhesion of the metal film. More preferably, the heating time is preferably from 5 minutes to 2 hours, more preferably from 3 minutes to about 1 hour, in terms of productivity and adhesion improvement. Further, in the heating step, the heat treatment may be performed twice in succession.

S 48 201226627u 2金屬圖案材料、及其製造方法(之一)> 圖1 (E)所示,可藉由進行將上述積層體18表面 =金膜16則成随狀的醜形成步驟,而製造表面具 圖案狀金屬膜20的金屬圖案材料(積層體)。 乂下對此圖案形成步驟進行詳細闡述。 (圖案形成步驟) η、驟疋藉由上述鍍敷步驟將金屬膜蝕刻成圖案狀而 :”狀金屬膜的步驟。更具體而言,如圖i(E)所示, ^,中藉由除去金屬膜16的不需要部分,而於聚合物 層14b上形成圖案狀金屬膜2〇。 於此圖案的形成中,亦可使用任意的方法,具體而言, 可使用通*所知的減成法(於金屬膜上設置圖案狀遮罩, =遮罩的_成區域進行闕處理後,除去遮罩而形成圖 蓄、狀金屬膜的方法)、半加成法(於金屬膜上設置圖案狀遮 :罩的非形成區域形成金屬膜的方式進行鍍敷處 =)’將遮罩除去進行_處理,而形成圖餘金屬膜的方 態。圖2(A),2(D)表示使用減成法的圖案形成步爾的形 首先,藉由進行上述步驟⑷的鑛敷步驟,而 ♦ 不的具有基板1G、含魏偶合劑的基底層12 U物層14b、及金屬膜16的積層體18。圖 在基板10的單面設置金屬膜16,但亦 ’ 設置金屬膜16。 J於基板忉的兩面 49 201226627 接著,如圖2 (B)所示’將圖案狀遮罩22設置於金 屬膜16上。 ° ' 然後’如圖2 (C)所示’將未設置遮罩22的區域的 金屬膜16藉由餘刻處理(例如乾式蝕刻、濕式蝕刻)而除 去,而獲得圖案狀金屬膜20。最後將遮罩22去除而獲得 金屬圖案材料24。 Λ 遮罩22的製作可使用公知的抗蝕劑材料。例如可在金 屬膜上設置抗賴層,藉由圖案曝光、顯影而形成盘圖案 狀金屬膜相同圖案的遮罩。抗蝕劑材料亦可使用任/竟的材 料’可使用負型、正型、液狀、膜狀的材料。 另外’姓刻方法可使用任何公知的方法, 蝕刻、乾式蝕刻等,任意選擇即可。就作業的操作而;、, =姓刻於裝置等的簡便性的方面較佳。_ 如^使 用氟化銅、氯化鐵等的水溶液。 圖3 (Α)〜圖3 (Ε)表示使用半加成法 步驟的形態。 輯圖案形成 首先’準備圖3 (A)所干的直古Α & 合劑的基底層12、聚人^ 有基板1G、含雜偶 18。 ^物層14b、及金屬膜16的積層體 接著,如圖3 Γ 屬膜16上。 不夺圖案狀遮罩22設置於金 接者,進行鑛敷處理(例 在未設置遮罩22的區心上、職)如圖3 (C)所不, 部的金屬膜16b。)成金屬膜,而獲得具有凸部與凹 50S 48 201226627u 2 Metal pattern material, and method for producing the same (1)> As shown in Fig. 1(E), the ugly forming step of forming the surface of the layered body 18 = the gold film 16 can be performed. A metal pattern material (layered body) having a patterned metal film 20 on the surface is produced. This pattern forming step is explained in detail below. (Pattern Forming Step) η. The step of etching the metal film into a pattern by the plating step described above: a step of forming a metal film. More specifically, as shown in FIG. The unnecessary portion of the metal film 16 is removed, and the patterned metal film 2 is formed on the polymer layer 14b. In the formation of the pattern, any method can be used, and specifically, the subtraction can be used. Forming method (providing a pattern mask on the metal film, = 阙 forming a mask to perform 阙 processing, removing the mask to form a patterned metal film), and semi-additive method (setting on the metal film) Pattern-like masking: plating is performed in such a manner that a non-formed region of the cover forms a metal film =) 'The mask is removed and processed to form a state of the remaining metal film. Fig. 2(A), 2(D) show Using the pattern of the subtractive method to form the shape of the step first, by performing the mineralizing step of the above step (4), the substrate 1G, the base layer 12 containing the Wei coupler, the U layer 14b, and the metal film 16 are not used. The laminated body 18. The metal film 16 is provided on one side of the substrate 10, but the metal film 16 is also provided. Both sides of the board 49 49 201226627 Next, as shown in FIG. 2(B), the pattern mask 22 is placed on the metal film 16. ° ' Then ' as shown in FIG. 2 (C), the mask 22 is not provided. The metal film 16 of the region is removed by a residual process (for example, dry etching or wet etching) to obtain a patterned metal film 20. Finally, the mask 22 is removed to obtain a metal pattern material 24. Λ The mask 22 can be fabricated. A well-known resist material can be used, for example, a resist layer can be provided on the metal film, and a mask of the same pattern of the pattern metal film can be formed by pattern exposure and development. The resist material can also be made of any material. 'A negative, positive, liquid, or film-like material can be used. In addition, the 'last name method can be any known method, etching, dry etching, etc., and can be arbitrarily selected. In the operation of the job; It is preferable to use it in terms of the simplicity of the apparatus, etc. _ If an aqueous solution of copper fluoride, ferric chloride or the like is used, Fig. 3 (Α) to Fig. 3 (Ε) show a form in which a semi-additive method is used. Forming the first 'preparation of the straight ancient Α & mixture of Figure 3 (A) The bottom layer 12, the polysilicon substrate 1G, the impurity-containing layer 18, the material layer 14b, and the metal film 16 are laminated on the film 16 as shown in Fig. 3. The pattern mask 22 is disposed on the gold connector. The mineral deposit treatment (for example, on the center of the region where the mask 22 is not provided) is as shown in Fig. 3 (C), and the metal film 16b is formed into a metal film to obtain a convex portion and a concave portion 50.

201226627 . ______II 然後,如圖3 (D)所示,將遮 ⑻所鄉有咖金屬膜㈣ ^劑、餘刻液等可使用與減成法相同的材料。另外, 電鍍法可使用上述記載的方法。 如J二在t金屬膜的同時’亦可藉由公知的方法(例 L; J、電f;灰化)等,將含發院偶 及聚合物層14b-起除去^ 基底層 (用途) 所得的金屬圖案材料可用於各種領域,例如可用於·· 電氣/電子/通信、農林水產、礦業、建築、食品、纖维、 衣類、醫療、煤、石油、橡膠、皮革、汽車、精密設備、 木材'建材、土木、傢具、印刷、樂器等廣泛的產業領域。 更具體而言,可用於··印表機、個人電腦、文字處理 機、鍵盤、個人數位助理(PDA,Personal Digital Assistant)、 電話機、影印機、傳真機、電子收銀機(ECR,electjOnic cash registers)、計算器、電子記事薄、卡片、固持器、文具等. 商務設備、辦公自動化(〇A,Office Automation)設備, 洗衣機、冰箱、吸塵器、電爐、照明器具、遊戲機、熨斗、 被爐等家電設備’電視機(TV)、磁帶錄像機(VTR, videotape recorder)、攝像機、收錄機、磁帶錄音機、迷你 磁碟、光碟(CD,compact disk)播放機、揚聲器、液晶 顯示器等視聽(AV,Audio Video)設備,連接器、繼電器、 51 201226627 〆v/plt 電容器、開關、印刷基板、繞線管、半導體密封材料、發 光二極體(LED,light-emitting diode)密封材料、電線、 電纜、變壓器、偏向磁軛、分電盒、半導體晶片、配線基 板、柔性印刷電路(FPC,Flexible Printed Circuit)、覆晶 薄膜(COF ’ Chip On Film)、捲帶式自動接合(TAB,Tape Automated Bonding )、2 層 CCL ( Copper Clad Laminate ) 材料、電氣配線用材料、多層配線基板、母板、天線、抗 電磁波膜、鐘錶等電氣/電子零件、及通信設備等用途。 另外’使用金屬圖案材料作為配線基板時,可於金屬 圖案材料的表面進一步積層絕緣樹脂層(層間絕緣膜),並 於絕緣細旨層(層間絕緣膜)的表面進_步形成配線(金 屬圖案)’或於金屬圖案材料表面形成阻焊劑。 <金屬圖案材料的製造方法(之二)〉 表面具有圖案狀金屬膜的金屬圖案材料的製造方法的 -他形態’可列舉利㈣案狀聚合物層的方法。 Φ =言’首先,如圖4(A)所示,於上述步驟⑴ _此3==?(例如曝光),接著進行顯影處理, “ 14e。^卜成含/f偶合劑的基底層12與圖案狀 可使用特定的遮罩。另^圖旦案狀供'給能量時,根據需要 可列舉使用公知的_ ^^理的方法並無特別限定, (例如氫氧化财溶;^ =如碳酸氳鈉水、驗性水溶液 然後,如圖的方法等。 驟⑴中所說明的觸媒;^ =聚合物層14c實施上述步 媒^步驟,喊得供給了鍍敷觸媒201226627 . ______II Then, as shown in Fig. 3 (D), the same material as the subtractive method can be used for the metal film (4), the residual liquid, and the like. Further, the method described above can be used for the plating method. For example, J2 may be removed from the metal film at the same time as the known method (Example L; J, electric f; ashing), etc., and the base layer and the polymer layer 14b are removed. The resulting metal pattern material can be used in various fields, for example, for electrical/electronic/communication, agriculture, forestry and fisheries, mining, construction, food, fiber, clothing, medical, coal, petroleum, rubber, leather, automotive, precision equipment, Wood's extensive industrial fields such as building materials, civil engineering, furniture, printing, and musical instruments. More specifically, it can be used for printers, personal computers, word processors, keyboards, personal digital assistants (PDAs), telephones, photocopiers, fax machines, electronic cash registers (ECR, electjOnic cash registers). ), calculators, electronic notebooks, cards, holders, stationery, etc. Business equipment, office automation (〇A, Office Automation) equipment, washing machines, refrigerators, vacuum cleaners, electric stoves, lighting appliances, game consoles, irons, ovens, etc. Home appliances 'TV (TV), VTR (videotape recorder), camcorder, tape recorder, tape recorder, mini disk, CD (compact disk) player, speaker, LCD display, etc. (AV, Audio Video Equipment, connectors, relays, 51 201226627 〆v/plt capacitors, switches, printed circuit boards, bobbins, semiconductor sealing materials, light-emitting diode (LED) sealing materials, wires, cables, transformers, Bias yoke, distribution box, semiconductor wafer, wiring substrate, flexible printed circuit (FPC, Flexibl e Printed Circuit), COF 'Chip On Film, Tape Automated Bonding (TAB), 2 CCL (Copper Clad Laminate) Material, Electrical Wiring Material, Multilayer Wiring Board, Motherboard , antennas, anti-electromagnetic waves, electrical and electronic parts such as watches and clocks, and communications equipment. In addition, when a metal pattern material is used as the wiring board, an insulating resin layer (interlayer insulating film) may be further laminated on the surface of the metal pattern material, and wiring (metal pattern) may be formed on the surface of the insulating layer (interlayer insulating film). ) or forming a solder resist on the surface of the metal pattern material. <Manufacturing Method of Metal Pattern Material (Part 2)> A method of producing a metal pattern material having a patterned metal film on the surface - a method of producing a film polymer layer. Φ = 言 'First, as shown in Fig. 4(A), in the above step (1) _ this 3 ==? (for example, exposure), followed by development processing, "14e. ^ into a base layer 12 containing /f coupling agent A specific mask may be used in the form of a pattern. When the energy is supplied to the pattern, the method of using a well-known method may be exemplified as needed (for example, a hydroxide solution; ^ = Sodium strontium carbonate water, an aqueous solution, and then, as shown in the figure, etc. The catalyst described in the step (1); ^ = the polymer layer 14c is subjected to the above-mentioned step, and is supplied with a plating catalyst.

S 52 201226627 - At 或其前驅物的圖案狀聚合物層14d。 最後,對聚合物層14d實施上述步驟(4)中所說明的 鑛敷步驟’藉此如圖4 (C)所示般使圖案狀金屬膜20形 成於聚合物層14d上。 <金屬圖案材料的製造方法(之三)> 作為表面具有圖案狀金屬膜的金屬圖案材料的製造方 法的其他形態,可藉由以下方法獲得金屬圖案材料。具體 而言’在上述步驟(1)後’對含矽烷偶合劑的基底層成圖 案狀供給能量(例如曝光),然後實施步驟(2),而進行聚 合物層的顯影處理,藉此可僅於含矽烷偶合劑的基底層上 的未供給能量的區域獲得圖案狀聚合物層。對此聚合物層 實施步驟(3)及(4),而獲得金屬圖案材料。 另外,此方法適用於:在基底層形成用組成物中含有 含P = 0基的聚合性化合物的情形,或矽烧偶合劑中的反 應性基藉由自由基聚合性基等能量供給而失活的情形。 具體而言,首先,如圖5(A)所示,藉由經過上述步 驟(1) ’而於基板10上形成含矽烷偶合劑的基底層12。 接著,對含矽烷偶合劑的基底層12成圖案狀供給能量 (例如曝光)。更具體可列舉:如圖5 (B)所示,將特定 的圖案的遮罩30設置於含矽烷偶合劑的基底層12上,介 隔此遮罩30進行曝光處理的方法。 接著’如圖5 (C)所示’藉由經過上述步驟(2)而 於含矽烷偶合劑的基底層12上製作聚合物層14a。 接著,對聚合物層14a進行顯影處理後,如圖4 (D) 53 201226627 所示般,僅於含矽烷偶合劑的基底層12的因遮罩30而未 曝光的未曝光區域獲得圖案狀聚合物層14c。曝光區域 中,含矽烷偶合劑的基底層12中的含P = 〇基的聚合性化 合物的聚合性基反應而消失、或含矽烷偶合劑的基底層12 中的反應性基(例如自由基聚合性基)失活,因此即便實 施步驟(2)亦不會於含矽烷偶合劑的基底層12與聚合物 層14a之間生成化學鍵。因此,於含矽烷偶合劑的基底層 12的曝光區域上的聚合物層、與未曝光區域上的聚合物層 之間對顯景》處理的耐性不同,可於含石夕烧偶合劑的基底層 12的未曝光區域選擇性地形成聚合物層i4c。 另外,顯影處理的方法並無特別限定,可列舉使用公 知的顯影液(例如碳酸氫鈉水、鹼性水溶液(例如 鈉水溶液))的方法等。 如圖5 (E)所示 珂取兮物層14c實施上述 ,⑴中所制_雜給倾,顿得供給了鑛 或其前驅物的圖案狀聚合物層14d。 最後,對聚合物層14d實施上述步驟⑷中 藉此如圖5(F)所示般使圖案狀金屬 成於聚合物層14d上》 、20 [實例] 發明Si限發明進行更加詳細的說明’值本 細闡述 Γ,對本實例中所錢的聚合物的合成方法 進行詳S 52 201226627 - Patterned polymer layer 14d of At or its precursor. Finally, the mineral layer 14d is subjected to the mineralizing step described in the above step (4), whereby the patterned metal film 20 is formed on the polymer layer 14d as shown in Fig. 4(C). <Manufacturing Method of Metal Pattern Material (Part 3)> As another aspect of the method for producing a metal pattern material having a patterned metal film on the surface, a metal pattern material can be obtained by the following method. Specifically, 'after the above step (1), 'the base layer containing the decane coupling agent is patterned to supply energy (for example, exposure), and then the step (2) is carried out, and the development process of the polymer layer is performed, whereby only A patterned polymer layer is obtained on the uncharged region on the underlayer of the decane-containing coupling agent. Steps (3) and (4) are carried out on the polymer layer to obtain a metal pattern material. Further, this method is applicable to a case where a polymerizable compound containing a P = 0 group is contained in a composition for forming a base layer, or a reactive group in a samarium coupler is lost by energy supply such as a radical polymerizable group. Live situation. Specifically, first, as shown in Fig. 5(A), a base layer 12 containing a decane coupling agent is formed on the substrate 10 by the above step (1)'. Next, the base layer 12 containing the decane coupling agent is supplied with energy (e.g., exposure) in a pattern. More specifically, as shown in Fig. 5(B), a mask 30 of a specific pattern is placed on the base layer 12 containing a decane coupling agent, and the mask 30 is subjected to exposure treatment. Next, as shown in Fig. 5(C), the polymer layer 14a is formed on the underlayer 12 containing the decane coupling agent by the above step (2). Next, after the development of the polymer layer 14a, as shown in FIG. 4 (D) 53 201226627, pattern-like polymerization is obtained only in the unexposed regions of the underlayer 12 containing the decane coupling agent which are not exposed by the mask 30. The layer 14c. In the exposed region, the polymerizable group of the P = fluorenyl group-containing polymerizable compound in the base layer 12 containing the decane coupling agent disappears or the reactive group in the base layer 12 containing the decane coupling agent (for example, radical polymerization) The base is inactivated, so that even if step (2) is carried out, no chemical bond is formed between the underlayer 12 containing the decane coupling agent and the polymer layer 14a. Therefore, the resistance of the polymer layer on the exposed region of the underlayer 12 containing the decane coupling agent to the polymer layer on the unexposed region is different, and can be applied to the substrate containing the ceramsite coupling agent. The unexposed regions of layer 12 selectively form polymer layer i4c. Further, the method of the development treatment is not particularly limited, and examples thereof include a method of using a known developer (for example, sodium hydrogencarbonate water or an aqueous alkaline solution (for example, sodium aqueous solution)). As shown in Fig. 5(E), the pick-up layer 14c is subjected to the above-described, (1), and the patterned polymer layer 14d to which the ore or its precursor is supplied. Finally, the polymer layer 14d is subjected to the above step (4), whereby the patterned metal is formed on the polymer layer 14d as shown in Fig. 5(F). 20, [Example] The invention of Si is described in more detail. The value is explained in detail, and the synthesis method of the polymer of the money in this example is detailed.

S 54 201226627 (合成例1 :聚合物A) 在2 L的三口燒瓶中投入乙酸乙酯丨l、2-胺基乙醇 H9g ’藉由冰浴進行冷卻。於其中滴加2_漠異丁醯漠ι5〇 g而將内溫調節為2(TC以下。然後,使内溫上升至室溫 (25°C )而反應2小時。反應結束後’追加蒸餾水3〇〇mL 而使反應停止。然後’藉由蒸鶴水300 mL將乙酸乙g旨層 清洗4次後,藉由硫酸鎂進行乾燥,接著將乙酸乙酯蒸餾 除去,而獲得80 g原料A。 20 g。 接著,在500 mL的三口燒瓶中,投入47.4 g原料Λ、 D比啶22 g、乙酸乙酯150 mL並藉由冰浴進行冷卻。於其 中滴加丙烯醯氯25 g而將内溫調節為2〇。(:以下。然後, 升溫至室溫而反應3小時。反應結束後,追加蒸餾水3〇〇 mL 使反應停止。然後,藉由蒸餾水3〇〇 mL將乙酸乙酯層清 洗4次後,藉由硫酸鎂進行乾燥,接著將乙酸乙酯蒸顧除 去。然後,藉由管柱層析法將以下的單體M純化而獲得 [化 13]S 54 201226627 (Synthesis Example 1: Polymer A) Ethyl acetate 丨l and 2-aminoethanol H9g' were placed in a 2 L three-necked flask to be cooled by an ice bath. 2# is added to the mixture to adjust the internal temperature to 2 (TC or less. Then, the internal temperature is raised to room temperature (25 ° C) and reacted for 2 hours. After the reaction is finished, 'additional distilled water The reaction was stopped by 3 〇〇 mL. Then, the ethyl acetate layer was washed 4 times with 300 mL of steamed water, dried by magnesium sulfate, and then ethyl acetate was distilled off to obtain 80 g of the starting material A. 20 g. Next, in a 500 mL three-necked flask, 47.4 g of a raw material, 22 g of D-pyridine, and 150 mL of ethyl acetate were charged and cooled by an ice bath, and 25 g of acrylonitrile chloride was added dropwise thereto. The temperature was adjusted to 2 〇. (: The following. Then, the temperature was raised to room temperature and reacted for 3 hours. After the completion of the reaction, 3 mL of distilled water was added to stop the reaction. Then, the ethyl acetate layer was washed by 3 mL of distilled water. After 4 times, it was dried by magnesium sulfate, and then the ethyl acetate was removed by evaporation. Then, the following monomer M was purified by column chromatography to obtain [Chem. 13].

在500 mL的三口燒瓶中投入N,N二甲基乙醯胺8 g, 在氮氣流下加熱至65°C。於其中歷時4小時滴加單體M : 14_3 g、丙烯腈(東京化成工業(股)製造)3 〇 g、丙烯 55 201226627 ^ ^ 酸(東京化成製造)65g、包含v_65 (和光純藥製造)〇4 g的N,N-二甲基乙醯胺8 g溶液。 滴加結束後’接著將反應溶液攪拌3小時。然後,追 加N,N-二甲基乙醯胺41 g ’將反應溶液冷卻炱室溫。在上 述反應溶液中添加4-羥基τΕΜΡΟ(東京化成製造)0.09 g、 二氣雜二環(DBU) 54.8 g,於室溫下反應12小時。然後, 於反應液中添加70質量%甲磺酸水溶液54 g。反應結束 後’藉由水進行再沈澱’將固體成分取出,而獲得聚合物 A (重里平均分子量3 7萬)(Mw/Mn=1 8) l2 g。使用電 位差自動滴定裝置(京都電子工業(股)製造)、及使用 〇. 1 Μ氫氧化鈉水溶液作為滴定液,來測定所得的聚合物a 的酸值,結果此聚合物A的酸值為3 9麵〇1々。 使用紅外線(IR’ infrared ray)測定機(堀場製 (股)製造)對所得的聚合物A進行鑑^。測定是使聚人 物溶解於丙随使用KBr結晶來進行。IR測定的社果可 知’在224Gcm附近觀測到峰值並且 腈被導入至聚合物。另外,藉由酸值測定可= ί 糾丙稀紐導人。科,絲合物早 (二甲基亞颯),藉由布魯香风化蘭80 的NMR (AV-3〇0;)進行測定 打化的3〇〇 MHz8 g of N,N-dimethylacetamide was placed in a 500 mL three-necked flask and heated to 65 ° C under a nitrogen stream. The monomer M was added dropwise for 4 hours, 14_3 g, acrylonitrile (manufactured by Tokyo Chemical Industry Co., Ltd.), 3 〇g, propylene 55 201226627 ^ ^ acid (manufactured by Tokyo Chemical Industry Co., Ltd.), 65 g, including v_65 (manufactured by Wako Pure Chemical Industries, Ltd.) 4 g of N,N-dimethylacetamide 8 g solution. After the completion of the dropwise addition, the reaction solution was stirred for 3 hours. Then, N,N-dimethylacetamide 41 g ' was added dropwise, and the reaction solution was cooled to room temperature. To the above reaction solution, 0.09 g of 4-hydroxyzirconium (manufactured by Tokyo Chemical Industry Co., Ltd.) and 54.8 g of dioxane (DBU) were added, and the mixture was reacted at room temperature for 12 hours. Then, 54 g of a 70% by mass aqueous methanesulfonic acid solution was added to the reaction liquid. After the completion of the reaction, the solid component was taken out by reprecipitation by water to obtain a polymer A (weight average molecular weight: 370,000) (Mw/Mn = 18) l2 g. The acid value of the obtained polymer a was measured by using a potentiometric auto-titration device (manufactured by Kyoto Electronics Co., Ltd.) and using a sodium hydroxide aqueous solution as a titration solution, and as a result, the acid value of the polymer A was 3 9 faces 〇 1々. The obtained polymer A was examined using an infrared (IR' infrared ray) measuring machine (manufactured by Horiba). The measurement was carried out by dissolving the poly(P) in C with the use of KBr crystals. It is known from the IR measurement that a peak was observed around 224 Gcm and the nitrile was introduced into the polymer. In addition, by the acid value can be = ί 丙 稀 纽 。 。 。 。 导 导 。 。 Branch, silk early (dimethyl sulfoxide), determined by NMR (AV-3〇0;) of Brucella weathered blue 80. 3〇〇 MHz

元的峰值在2·5 ppm句_ ( 5H二US含氰基的單 當於含聚合性基的單元的峰值在78 _ 7較寬,相 分)、5.8 ppm -5.6 PPm( 1H 分)、 加 PPm (1H 4.2 ppm -3.9 ppm (2H 分) PP 5·2 觸(1H 分)、 .3ppm-3.5Ppm(2H*)25 s 56 201226627 _ιι ppm-0.7 ppm (6H分)被觀察到較寬,相當於含羧酸的單 兀的峰值在2.5 PPm-0.7 ppm (3H分)被觀察到較寬,含 聚合性基的單元:含氰基的單元:羧酸基單元=29 : 30 : 41 (mol%)。 [化 14]The peak value of the element is in the 2. 5 ppm sentence _ (5H two US cyano group only when the peak of the unit containing the polymerizable group is wider at 78 -7, the phase is divided), 5.8 ppm -5.6 PPm (1H), Add PPm (1H 4.2 ppm -3.9 ppm (2H points) PP 5·2 touch (1H points), .3ppm-3.5Ppm(2H*)25 s 56 201226627_ιι ppm-0.7 ppm (6H points) was observed to be wider The peak corresponding to the carboxylic acid-containing monoterpene was observed to be wider at 2.5 PPm-0.7 ppm (3H), and the unit containing a polymerizable group: a unit containing a cyano group: a carboxylic acid group unit = 29 : 30 : 41 (mol%). [Chem. 14]

HN 丫、 〇 (合成例2 :聚合物B) 在1000 ml的三口燒瓶中投入N_甲基吡咯烷酮35g, 在氮氣流下加熱至75°c。於其中歷時2.5小時滴加丙烯酸 2-羥基乙酯(市售品、東京化成製造)6·6〇 g、丙烯酸2_ 氰基乙醋28.4 g、及包含ν_6〇ι (和光純藥製造)〇幻g的 N-曱基轉35 g溶液。滴加結束後,將反應溶液加熱 至80 C ’接著攪掉3小時。然後,將反應溶液冷卻至室溫。 在上述反應溶液中添加對苯二酚二第三丁醚〇 29呂、 二月桂酸二丁基錫0.29 g、Karenz AOI (昭和電工(股) 製造)18.S6 g、及N-曱基吡咯烷酮19 g,在55。〇進行6 小時反應。然後,在反應液中添加曱醇3 6 g,接著反應 1.5小時。反應結束後,藉由水進行再沈澱,並取出固體 57 201226627 成分’而獲得25 g聚合物B。 (結構的鑑定) 使聚合物B溶解於氘化〇]^5〇,藉由布魯克製造的3〇〇 MI^z的NMR (AV-300)進行測定。可知,相當於含氰基 的單元的峰值在 4.3ppm_4.05ppm (2H 分)、2.9ppm-2.8 ppm (2H 分)、2.5 ppm -1.3 ppm (3H 分)被觀察到較寬,HN 丫, 〇 (Synthesis Example 2: Polymer B) 35 g of N-methylpyrrolidone was placed in a 1000 ml three-necked flask, and heated to 75 ° C under a nitrogen stream. In the course of 2.5 hours, 2-hydroxyethyl acrylate (commercial product, manufactured by Tokyo Chemical Industry Co., Ltd.) 6·6〇g, acrylic acid 2_cyanoethyl vinegar 28.4 g, and ν_6〇ι (made by Wako Pure Chemical Industries, Ltd.) were added dropwise. The N-thiol of g is converted to a 35 g solution. After the completion of the dropwise addition, the reaction solution was heated to 80 C' and then stirred for 3 hours. Then, the reaction solution was cooled to room temperature. To the above reaction solution, hydroquinone dibutyl ether hydride 29 ruthenium, dibutyl tin dilaurate 0.29 g, Karenz AOI (manufactured by Showa Denko KK), 18.S6 g, and N-mercaptopyrrolidone 19 g were added. At 55. The 〇 was reacted for 6 hours. Then, 3 6 g of decyl alcohol was added to the reaction liquid, followed by a reaction for 1.5 hours. After completion of the reaction, reprecipitation was carried out by water, and the solid component 57 201226627 was taken out to obtain 25 g of polymer B. (Identification of Structure) Polymer B was dissolved in ruthenium osmium], and was measured by NMR (AV-300) of 3 〇〇 MI^z manufactured by Bruker. It can be seen that the peak corresponding to the cyano group-containing unit is observed to be wider at 4.3 ppm_4.05 ppm (2H minutes), 2.9 ppm-2.8 ppm (2H minutes), and 2.5 ppm -1.3 ppm (3H minutes).

相當於含聚合性基的單元的峰值在7 2 ppm _7 3 pprn ( 1H 分)、6.4 ppm -6.3 PPm( 1H 分)、6.2 ppm -6.1 PPm( 1H 分)、 6.0 ppm -5.9 ppm ( 1H 分)、4.3 ppm _4 〇5 ppm ( 6H 分)、 3.3 ppm -3.2 ppm ( 2H 分)、2.5 ppm -1.3 ppm ( 3H 分)被 觀察到較寬,含聚合性基的單元:含氰基的單元=20 : 80 (mol% )。 (分子量的測定) 使聚合物B溶解於四氫π夫喃(THF,tetrahydrofuran), 使用東曹(Tosoh)製造的高速凝膠滲透層析儀(GPC,gel permeation chromatograph )( HLC-8220GPC )測定分子 量。其結果可知,於23.75分出現峰值,以聚苯乙烯換算 計 Mw=60000 (Mw/Mn=1.9)。 另外,以下的聚合物B的化學式中的數值表示各單元 的莫耳%。 [化 15]The peak corresponding to the polymerizable group is 7 2 ppm _7 3 pprn (1H min), 6.4 ppm -6.3 PPm (1H min), 6.2 ppm -6.1 PPm (1H min), 6.0 ppm -5.9 ppm (1H min ), 4.3 ppm _4 〇5 ppm (6H points), 3.3 ppm -3.2 ppm (2H points), 2.5 ppm -1.3 ppm (3H points) were observed to be wider, units containing polymerizable groups: units containing cyano groups =20 : 80 (mol% ). (Measurement of molecular weight) Polymer B was dissolved in tetrahydrofuran (THF, tetrahydrofuran), and determined by a gel permeation chromatograph (GPC, manufactured by Tosoh) (HLC-8220GPC). Molecular weight. As a result, it was found that a peak appeared at 23.75 minutes, and Mw = 60000 (Mw/Mn = 1.9) in terms of polystyrene. Further, the numerical values in the chemical formula of the following polymer B represent the mole % of each unit. [化15]

SS

58 201226627ιτ ---- -Γ Al <實例1> [含矽烷偶合劑的基底層的製作] 在玻璃基板(康寧(Corning)公司的EAGLE 2000 (50 mmx50mmx〇.7mm))上,藉由旋塗法塗佈包含3-(丙烯醯 氧基)丙基三甲氧基矽烷(KBM_5103 )與KAYAMER PM_2i (曰本化藥公司製造)的基底層形成用組成物X1,於n〇°c 乾燥5分鐘。然後’藉由異丙醇清洗基板後,接著用水清 洗,並進行二氣乾紐,而獲得含梦烧偶合劑的基底層。 另外’ 3-(丙烯醯氧基)丙基三曱氧基石夕燒與 PM-21的質量比為1:0.25。並且,在基底層形成用組成 物XI中含有環戊酮作為溶劑,環戊酮的含量相對於組成 物總量為94質量%。 測定玻璃基板的表面水接觸角、與上述處理後的玻璃 基板的表面水接觸角,結果分別測定為3。、25。,藉由上 述處理而確認在玻璃基板上形成了含矽烷偶合劑的基底 層。 [聚合物層的形成] 然後,藉由旋塗法將包含聚合物A與3_(丙烯醯氧基) 丙基三曱氧基魏的聚合物層形成驗成物γι塗佈於具 有含魏偶合躺基底層的基板上,於贼賴5分鐘。 然後,對基板整面U 254 nm進行uv曝光(曝光量:12〇〇〇 mJ/cm2) ’以1%碳酸氫鈉水進行清洗。 藉此’獲付與基板上的含石夕烧偶合劑的基底層直接結 合的聚合物層(厚度:1 μιη)。 59 20122662758 201226627ιτ ---- -Γ Al <Example 1> [Preparation of base layer containing decane coupling agent] On a glass substrate (EAGLE 2000 (50 mm x 50 mm x 〇. 7 mm) of Corning), by spin The base layer forming composition X1 containing 3-(acryloxy)propyltrimethoxydecane (KBM_5103) and KAYAMER PM_2i (manufactured by Sakamoto Chemical Co., Ltd.) was applied by coating, and dried at n〇°c for 5 minutes. . Then, the substrate was washed with isopropyl alcohol, followed by washing with water, and a two-gas dry button was applied to obtain a base layer containing a dream-burning coupler. Further, the mass ratio of '3-(propylene decyloxy) propyl tridecyloxylate to PM-21 was 1:0.25. Further, the base layer forming composition XI contains cyclopentanone as a solvent, and the content of the cyclopentanone is 94% by mass based on the total amount of the composition. The surface water contact angle of the glass substrate and the surface water contact angle of the glass substrate after the above treatment were measured, and the results were each measured as 3. 25. By the above treatment, it was confirmed that the underlayer containing the decane coupling agent was formed on the glass substrate. [Formation of Polymer Layer] Then, a polymer layer comprising polymer A and 3-((acryloxy)oxypropyl trimethoxy group, a composition of γι, was coated by a spin coating method to have a Wei-containing coupling Lying on the substrate of the basal layer, the thief relies for 5 minutes. Then, uv exposure (exposure: 12 〇〇〇 mJ/cm 2 ) was carried out on the entire surface of the substrate U 254 nm with 1% sodium hydrogencarbonate water. Thereby, a polymer layer (thickness: 1 μm) directly bonded to the underlayer containing the ceramide coupling agent on the substrate was obtained. 59 201226627

另外,3-(丙烯醢氧基)丙基三甲氧基矽烷的含有比例 相對於聚合物A的總質量而為5.7質量%。另外,聚合物 層形成用組成物Y1中含有水與卜曱氧基_2_丙醇的混合物 (現合質量比率(水曱氧基-2-丙醇)=2/8)作為溶劑, 水與1_曱氧基丙醇的混合物的含量相對於組成物總量 而為92.6質量%。 [觸媒的供給] 準備1質量%硝酸銀水溶液,將其作為錢敷觸媒液。 將具有聚合物層的基板浸潰在此鍍敷觸媒液中5分鑪 後,用純水清洗。 [锻敷處理及加熱處理] 接著’對供給了觸媒的聚合物層進行無電解鍍鋼。無 電‘錄敷是使用利用Through-Copper PGT(上村工業製造) 的下述組成的無電解鍍敷浴,於浴溫度3(rc浸潰聚合物 層,以鍍敷析出厚度為〇·5 μιη的方式形成鑛銅膜(金屬 獏)。 " 無電解鍍敷液的調液順序及原料如以下所述。 蒸餾水 PGT-A PGT-B PGT-C 福馬林液木 約60體積% 9.0體積% 6.0體積% 3.5體積% 2.3體積% 最後’藉由蒸餾水進行液面調整至總量為丨〇 〇體積0/〇。 *此處所用的福馬林是和光純藥的曱醛液(特級)。 201226627 ——-r!i 、 接著,對所得的基板於loot:實施30分鐘加熱處理 後,接著於14(TC實施30分鐘加熱處理。加熱處理後,使 用1質量%硫酸水溶液對金屬膜表面進行脫脂。 接著,將上述所得的金屬膜作為供電層,使用以下組 成的電解鏟銅浴以銅厚為12 μιη的方式實施電解鍍銅(3 A/dm2: 30分鐘),而獲得具有金屬膜的積層體。 (電解鍍銅浴的組成) •水 1000質量份 •硫酸銅五水合物 110質量份 • 98%硫酸 270質量份 •35%鹽酸 0.2質量份Further, the content ratio of 3-(acryloxy)propyltrimethoxydecane was 5.7% by mass based on the total mass of the polymer A. Further, the polymer layer-forming composition Y1 contains a mixture of water and diterpeneoxy-2-propanol (current mass ratio (hydroxyloxy-2-propanol) = 2/8) as a solvent, water The content of the mixture with 1-methoxypropanol was 92.6% by mass based on the total amount of the composition. [Supply of Catalyst] A 1% by mass aqueous silver nitrate solution was prepared and used as a money-contacting catalyst liquid. The substrate having the polymer layer was immersed in the plating catalyst liquid for 5 minutes, and then washed with pure water. [Forging treatment and heat treatment] Next, the polymer layer to which the catalyst was supplied was subjected to electroless plating. The electroless plating was performed using an electroless plating bath having the following composition using a Through-Copper PGT (manufactured by Uemura Industrial Co., Ltd.) at a bath temperature of 3 (rc impregnated the polymer layer to a plating thickness of 〇·5 μιη). The method forms a mineral copper film (metal ruthenium). " The liquid preparation sequence and raw materials of the electroless plating solution are as follows. Distilled water PGT-A PGT-B PGT-C Formalin liquid wood about 60% by volume 9.0% by volume 6.0 Volume% 3.5% by volume 2.3% by volume Finally 'liquid level adjustment by distilled water to a total volume of 丨〇〇 volume 0 / 〇. * The formalin used here is a phthalic acid solution (special grade) of Wako Pure Chemical. 201226627 — Then, the obtained substrate was subjected to a heat treatment for 30 minutes on a loot: and then heat-treated at 14 (TC for 30 minutes). After the heat treatment, the surface of the metal film was degreased using a 1 mass% sulfuric acid aqueous solution. Then, the metal film obtained above was used as a power supply layer, and electrolytic copper plating (3 A/dm 2 : 30 minutes) was carried out with a copper thickness of 12 μm using a copper shovel copper bath having the following composition to obtain a laminate having a metal film. (electrolytic copper bath Composition) • • Water 1,000 parts by mass 110 parts by mass of copper sulfate pentahydrate • 98% sulfuric acid 270 parts by mass • 0.2 mass parts 35% hydrochloric acid

•美錄德(Meltex)製造、Copper Gleam ST-901M 30質量份 接著’對所得的基板於l〇〇t:實施30分鐘加熱處理。 <實例2> 使用下述組成的基底層形成用組成物X2代替基底層 形成用組成物XI,使用下述組成的聚合物層形成用組成物 Y2代替聚合物層形成用組成物Y1,除此以外,根據與實 例1相同的順序,獲得積層體。 (基底層形成用組成物X2) •3-(丙烯醯氧基)丙基三甲氧基矽烷4.8質量% •環戊酮 95.2質量% (聚合物層形成用組成物Y2 ) •聚合物A 7.0質量% 61 201226627 • 3-(丙烯醯氧基)丙基三甲氧基矽烷相對於聚合物 A而為5.7質量% 相對於3-(丙烯 • KAYAMER PM-21 醯氧基)丙基三曱氧基矽烷而為25質量% •水與1-曱氧基-2-丙醇的混合物(混合質量比率(水 92.5質量% /1-曱氧基-2-丙醇)=2/8) <實例3> 使用聚合物層形成用組成物Y2代替聚合物層形成用 組成物Y1,除此以外,根據與實例i相同的順序,獲得積 層體。 <實例4> 將基底層形成用組成物XI及聚合物層形成用組成物 Y2中所使用的3-(丙烯醯氧基)丙基三曱氧基矽烷變更為甲 基丙烯酸3-三曱氧基矽烷基丙酯,除此以外,根據與實例 3相同的順序,獲得積層體。 <實例5> 使用下述組成的聚合物層形成用組成物γ3代替聚合 物層形成用組成物Y1,除此以外,根據與實例1相同的順 序,獲得積層體。 (聚合物層形成用組成物Y3) •聚合物A 6.9質量〇/0 •3-(丙烯醯氧基)丙基三曱氧基矽烷相對於聚合物 A而為10.0質量% ° • KAYAMER PM-21 相對於 3·(内烯• Made from Meltex, 30 parts by weight of Copper Gleam ST-901M Next, the obtained substrate was subjected to heat treatment for 30 minutes at 10°. <Example 2> The base layer forming composition X2 having the following composition was used instead of the base layer forming composition XI, and the polymer layer forming composition Y2 having the following composition was used instead of the polymer layer forming composition Y1. Other than this, a laminate was obtained in the same order as in Example 1. (Substrate layer forming composition X2) • 3-(propylene decyloxy) propyl trimethoxy decane 4.8% by mass • Cyclopentanone 95.2% by mass (polymer layer forming composition Y2) • Polymer A 7.0 mass % 61 201226627 • 3-(propylene decyloxy)propyltrimethoxydecane is 5.7% by mass relative to polymer A relative to 3-(propylene KAYAMER PM-21 decyloxy)propyl tridecyloxydecane And it is a mixture of 25% by mass of water and 1-nonoxy-2-propanol (mixing mass ratio (water 92.5 mass% / 1-decyloxy-2-propanol) = 2/8) <Example 3&gt A laminate was obtained in the same order as in Example i except that the polymer layer-forming composition Y2 was used instead of the polymer layer-forming composition Y1. <Example 4> The 3-(acryloxy)propyltrimethoxy decane used in the base layer-forming composition XI and the polymer layer-forming composition Y2 was changed to 3-trimethyl methacrylate. A laminate was obtained in the same manner as in Example 3 except for the oxyalkylalkylpropyl ester. <Example 5> A laminate was obtained in the same manner as in Example 1 except that the polymer layer-forming composition γ3 having the following composition was used instead of the polymer layer-forming composition Y1. (Polymer layer forming composition Y3) • Polymer A 6.9 mass 〇 /0 • 3-(acryloxy) propyl trimethoxy decane was 10.0% by mass relative to the polymer A. • KAYAMER PM- 21 relative to 3 · (internal

62 201226627. 醯氧基)丙基三甲氧基矽烷而為25質量% •水與1_曱氧基-2-丙醇的混合物(混合質量比率(水 /1-甲氧基-2-丙醇)=2/8) 92.2質量% <實例6> 將基底層形成用組成物XI及聚合物層形成用組成物 Y2 中所使用的 KAYAMER PM-21 變更為 KAYAMER PM-2 (曰本化藥公司製造)’除此以外,根據與實例3相同的順 序,獲得積層體。 <實例7> 使用下述組成的聚合物層形成用組成物Y4代替聚合 物層形成用錐成物Y1,除此以外,根據與實例1相同的順 序,獲得積廣體。 (聚合物層形成用組成物Y4) •聚合物A 7質量% •水與卜甲氧基丙醇的混合物(混合質量比率(水 八-甲氧基-2-丙醇)=2/8) 93.0質量% <實例8> 將基底層形成用組成物XI及聚合物層形成用組成物 Y2中所使用的3_(丙烯醯氧基)丙基三曱氧基矽烷變更為3_ 縮水甘油氧基丙基三甲氧基矽烷(LS2940),除此以外, 根據與實例3相同的順序,獲得積層體。 <實例9> 將聚合物層形成用組成物Y2中所使用的聚合物A變 更為聚合物抒’並將水與1-曱氧基-2-丙醇的混合物變更為 63 201226627 ^ ^ ^ 碳酸二曱酯與乙腈的混合物(混合質量比率:碳酸二曱酯/ 乙腈=1/2),除此以外,根據與實例2相同的順序,獲得 積詹體。 <實例10> 將聚合物層形成用組成物Y4中所使用的聚合物A變 更為聚合物B,並將水與1-曱氧基-2-丙醇的混合物變更為 碳酸二曱酯與乙腈的混合物(混合質量比率:碳酸二曱酯/ 乙腈=1/2),除此以外,報據與實例7相同的順序,獲得 積層體。 <比較例1 > 使用上述基底層形成用組成物X2代替基底層形成用 組成物XI ’除此以外,根據與實例1相同的順序,獲得積 層體。 ,另外,此比較例1中,基底層形成用組成物及聚合物 層形成用組成物中任一種均不含有含p==〇基的聚合性化 合物。 <比較例2> 、使用上述基底層形成用組成物X2代替基底層形成用 組成物XI ’使用上述聚合物層形成用組成物丫4代替聚合 物層形成用組成物Y1,除此以外,根據與實例丨相同的順 序,獲得積層體。 另外,此比較例2中,基底層形成用組成物及聚合物 層形成用組成物中的任一種均不含有含p = 〇基的聚合性 化合物,並且聚合物層形成用組成物中亦不含有石夕烧偶合62 201226627. 醯oxy)propyltrimethoxydecane and 25% by mass • Mixture of water and 1-methoxy-2-propanol (mixed mass ratio (water/1-methoxy-2-propanol) (2), the amount of the product of (manufactured by the company) 'In addition to this, a laminate was obtained in the same order as in Example 3. <Example 7> An aggregate body was obtained in the same order as in Example 1 except that the polymer layer-forming composition Y4 having the following composition was used instead of the polymer layer-forming cone-formed product Y1. (Polymer layer forming composition Y4) • Polymer A 7 mass% • Mixture of water and methoxypropanol (mixing mass ratio (water octa-methoxy-2-propanol) = 2/8) 93.0% by mass <Example 8> 3—(Propyloxy)propyltrimethoxy decane used in the base layer-forming composition XI and the polymer layer-forming composition Y2 was changed to 3 —glycidyloxy group A laminate was obtained in the same order as in Example 3 except for propyltrimethoxydecane (LS2940). <Example 9> The polymer A used in the polymer layer-forming composition Y2 was changed to the polymer 抒' and the mixture of water and 1-nonoxy-2-propanol was changed to 63 201226627 ^ ^ ^ A mixture of dinonyl carbonate and acetonitrile (mixing mass ratio: dinonyl carbonate / acetonitrile = 1/2) was obtained, except that in the same procedure as in Example 2, a product was obtained. <Example 10> The polymer A used in the polymer layer-forming composition Y4 was changed to the polymer B, and the mixture of water and 1-nonoxy-2-propanol was changed to dinonyl carbonate and A laminate was obtained in the same order as in Example 7 except that a mixture of acetonitrile (mixing mass ratio: dinonyl carbonate / acetonitrile = 1/2) was obtained. <Comparative Example 1> A laminate was obtained in the same manner as in Example 1 except that the underlayer formation composition X2 was used instead of the underlayer formation composition XI'. Further, in Comparative Example 1, neither the base layer-forming composition nor the polymer layer-forming composition contained a polymerizable compound containing p==fluorene group. <Comparative Example 2> The polymer layer forming composition 丫4 is used in place of the polymer layer forming composition XI4 in place of the polymer layer forming composition Y1, in addition to the underlying layer forming composition X2. The laminate was obtained in the same order as the example. In addition, in the comparative example 2, neither the base layer forming composition nor the polymer layer forming composition contained the polymerizable compound containing p = fluorenyl group, and the polymer layer forming composition was not Containing Shi Xizhuo coupling

S 64 201226627 劑。 &lt;比較例3&gt; 、使用填酸二乙醋(大八化學公司製造)代替基底層形 成用組成物X1中所使用的KAYAMER PM-21 (日本化藥 ^製造》除1^外,根據與實例1相同_序,製造積 層體。 行後3二t述鍍敷步驟的時點金屬膜,而無法進 &lt;評價方法(之一)&gt; 對上述所得的積層體於14〇。 對所得的積層體的表面(5 一二:1怖加熱處理。 放大25倍進行觀察,觀察表 有陰起時,積層體中的任一 ㈣起在 祺的密接性變差。另夕卜,,,充勺,結果金屬 不於表卜實用上較佳為非「χ」。倾仃扣。將結果 ^〇」:無隆起; △」.觀察到2個以下吉你ς 「V觀_3_上/彳Γ5㈣下的隆起; 到直經超過5inm的隆起。直I5·以下的隆起或觀察 另外,在隆起非圓狀時,藉由圓相火〆^ 相當經)進行上述評價。 ®相⑽(投影面積圓 〈評價方法(之二)&gt; 將上述評價方法(之一) 時,除此以外,根據與上1小時變更為2小 示於表b 以目_基準進行評價。將結果 65 201226627 &lt;評價方法(之三)&gt; 將上述評價方法(之一)中的於140°C下1小時加熱 處理條件變更為180°C下1小時,除此以外,根據與上述 相同的基準進行評價。將結果示於表1。 另外,表1中,「Si劑」欄表示各組成物中的矽烷偶 合劑的有無,將含有的情形記為「〇」,將不含有的情形記 為「x」。另外,表1中,「P = 〇劑」欄表示各組成物中的 含P = 0基的聚合性化合物的有無,將含有的情形記為 「〇」,將不含有的情形記為「x」。 表1中的「-」是指未實施。 [表1] 表1S 64 201226627 agent. &lt;Comparative Example 3&gt; In addition to KAYAMER PM-21 (manufactured by Nippon Kayaku Co., Ltd.) used in the base layer forming composition X1, the acid-containing diethyl vinegar (manufactured by Daihatsu Chemical Co., Ltd.) was used. In the same manner as in the example 1, the laminate was produced. The metal film at the time of the plating step was described after the third step, and the evaluation method (one) was not carried out. The obtained laminate was at 14 Å. The surface of the laminate (5:2:1 horrible heat treatment. Magnification 25 times for observation, when the watch is swelled, any one of the laminates (4) will have poor adhesion in the raft. In addition, Spoon, the result is that the metal is not better than the table. It is better to be non-"χ". The result is ^〇": no uplift; △". Observed 2 or less 吉你ς "V view _3_上/ The ridges under 彳Γ5(4); the ridges up to 5 inm straight. The bulges or observations of straight I5·belows. In addition, when the ridges are not round, the above evaluation is carried out by the round phase fires ^ equivalent () (projection) Area circle <Evaluation method (Part 2)&gt; When the above evaluation method (one of the above) is used, The time is changed to 2, and the evaluation is performed on the basis of the table b. The result is 65 201226627 &lt;Evaluation method (3)&gt; The heat treatment condition at 140 ° C for 1 hour in the above evaluation method (one) The evaluation was carried out according to the same criteria as above except that the temperature was changed to 180 ° C for one hour. The results are shown in Table 1. In Table 1, the "Si agent" column indicates the decane coupling agent in each composition. The presence or absence of the case is described as "〇", and the case where it is not included is marked as "x". In addition, in Table 1, the column "P = Tanning agent" indicates the polymerizability of P = 0 group in each composition. The presence or absence of the compound is described as "〇", and the case where it is not contained is referred to as "x". The "-" in Table 1 means not implemented. [Table 1] Table 1

基底層用形成用 組成物 聚合物層形成用 組成物 評價結果 Si劑 P=0劑 Si劑 p=o劑 評價(之一) 評價(之二) 評價(之三) 實例1 〇 〇 〇 X 〇 〇 - 實例2 0 X 〇 〇 〇 〇 - 實例3 〇 〇 〇 〇 〇 〇 〇 實例4 〇 〇 〇 〇 〇 0 〇 實例5 0 〇 〇 〇 〇 〇 0 實例6 〇 〇 0 〇 〇 〇 Δ 實例7 〇 〇 X X 〇 Δ - 實例8 〇 〇 〇 〇 〇 〇 Δ 實例9 〇 X 〇 〇 〇 〇 Δ 實例10 〇 〇 X X 〇 〇 Δ 比較例1 0 X 〇 X X X X 比較例2 0 X X X X X X 根據上述表1的結果可知並確認到,根據本發明的製 造方法而得的積層體中,幾乎未觀察到隆起等,而金屬膜 表現出優異的密接性。Evaluation result of composition for forming a polymer layer for forming a base layer Si agent P=0 Agent Si agent p=o agent evaluation (one) Evaluation (Part 2) Evaluation (Part 3) Example 1 〇〇〇X 〇 〇 - Example 2 0 X 〇〇〇〇 - Example 3 〇〇〇〇〇〇〇 Example 4 〇〇〇〇〇 0 〇 Example 5 0 〇〇〇〇〇 0 Example 6 〇〇 0 〇〇〇 Δ Example 7 〇 〇XX 〇Δ - Example 8 〇〇〇〇〇〇Δ Example 9 〇X 〇〇〇〇Δ Example 10 〇〇XX 〇〇Δ Comparative Example 1 0 X 〇XXXX Comparative Example 2 0 XXXXXX According to the results of Table 1 above In the laminate obtained by the production method of the present invention, almost no bulging or the like was observed, and the metal film exhibited excellent adhesion.

66 S 201226627 if 其中,根據實例1與實例7的比較可知並確認到,藉 由在聚合物層中含有矽烷偶合劑,而可獲得更優異的效果。 另外,根據實例3與實例6的比較可確認到,藉由使 用通式(2)中的Lb的伸烷基的長度更長的含p = 〇基的 聚合性化合物,而可獲得更優異的效果。 而且,根據實例3與實例8的比較可確認到,若使用 具有作為自由基聚合性基的丙烯醯基作為反應性基的矽烷 偶合劑,則可獲得更優異的效果。 另一方面,在基底層形成用組成物及聚合物層形成用 組成物的任一種均不含有含p=〇基的聚合性化合物的比 較例1及比較例2中’無法獲得表現特定效果的積層體。 &lt;圖案形成&gt; 在上述實例1中所得的積層體的金屬膜表面上,藉由 真空貼合機(名機製作所(股)製造:MVLP-600),將乾 式抗蝕劑膜(日立化成(股)製造;RY3315、膜厚15 μιη) 於70°C、以0.2 MPa進行層壓。接著,使層壓了乾式抗蝕 劑膜的基板與可形成JPCA-ET01所規定的梳型配線 (comb-shaped wiring)(依據 jpcA-BUO 1-2007 )的玻璃遮 罩密接,藉由中心波長405 nm的曝光機對抗蝕劑照射70 mJ的光能量。對曝光後的基板以〇 2 MPa的喷霧壓喷附 l%Na2C〇3水溶液,並進行顯影。然後,對基板進行水洗、 乾燥,而於鑛銅膜上形成減成法用抗餘劑圖案。 將形成了抗蝕劑圖案的基板於溫度4〇它下浸潰於 FeCl3/HCl水溶液(钱刻液)中而進行姓刻,從而將抗鋪 67 201226627 圖案的非形成區域所存在的鍍銅膜除去。66 S 201226627 if, according to the comparison between Example 1 and Example 7, it was confirmed that a more excellent effect can be obtained by including a decane coupling agent in the polymer layer. Further, according to the comparison between Example 3 and Example 6, it was confirmed that a more excellent p = fluorenyl group-containing polymerizable compound having a longer alkyl group of Lb in the formula (2) can be used. effect. Further, according to the comparison between Example 3 and Example 8, it was confirmed that a more excellent effect can be obtained by using a decane coupling agent having a propylene group as a radical polymerizable group as a reactive group. On the other hand, in Comparative Example 1 and Comparative Example 2 in which neither the base layer-forming composition nor the polymer layer-forming composition contained the polymerizable compound containing p=fluorenyl group, 'the specific effect was not obtained. Laminated body. &lt;Pattern formation&gt; On the surface of the metal film of the laminate obtained in the above Example 1, a dry resist film (Hitachi Chemical Co., Ltd.) was produced by a vacuum laminator (manufactured by Nagoya Co., Ltd.: MVLP-600). (manufacturing); RY3315, film thickness: 15 μm) Lamination at 70 ° C at 0.2 MPa. Next, the substrate on which the dry resist film is laminated is adhered to a glass mask which can form a comb-shaped wiring (according to jpcA-BUO 1-2007) prescribed by JPCA-ET01, by the center wavelength The 405 nm exposure machine irradiated the resist with a light energy of 70 mJ. The exposed substrate was sprayed with a 1% Na2C〇3 aqueous solution at a spray pressure of 〇 2 MPa, and developed. Then, the substrate was washed with water and dried to form an anti-reagent pattern for the subtractive method on the ore film. The substrate on which the resist pattern is formed is immersed in an aqueous solution of FeCl 3 /HCl (money engraving) at a temperature of 4 Torr, and the copper plating film is formed in the non-formation region of the pattern of the anti-sand 67 201226627 pattern. Remove.

然後,以0.2 MPa的噴霧壓在基板上喷附3% Na〇H 水溶液,而將抗蝕劑圖案膨潤剝離,藉由1〇%硫酸水溶液 進行中和處理,並進行水洗,藉此獲得梳型配線(圖案狀 錢銅膜)。所得的配線為L/S = 20 μιη/75 μιη。 然後,藉由電漿灰化將配線間的聚合物層及基底層除 去。 -« 接著,將阻焊劑(PFR800;太陽油墨製造(股)製造) 於70。(:、0.2 MPa的條件下真空層壓於所得的梳型配線 上’藉由中心波長365 nm的曝光機照射420 mJ的光能量。 接著,對基板實施80。(:/10分鐘的加熱處理後,以噴霧壓 〇.2 MPa對基板表面噴附NafO3 1%水溶液並進行顯影, 進行水洗、乾燥。然後,再次藉由中心波長365 nm的曝 光機對基板照射1000 mj的光能量❶最後,進行150°c/1 hr 的加熱處理,而獲得由阻焊劑被覆的梳型配線(配線基 板)。 &lt;實例11&gt; 實施實例1的[含矽烷偶合劑的基底層的製作],而獲 得具有含矽烷偶合劑的基底層的玻璃基板。 然後’藉由旋塗法將聚合物層形成用組成物Y1塗佈 於具有含矽烷偶合劑的基底層的基板上,於80°C乾燥5分 鐘。然後’介隔可形成JPCA-ET01所規定的梳型配線(依 據JPCA-BU01-2007)的玻璃遮罩,以254nm成圖案狀對 基板整面進行UV曝光(曝光量:i2000mJ/cm2),藉由1〇/。Then, a 3% Na〇H aqueous solution was sprayed on the substrate with a spray pressure of 0.2 MPa, and the resist pattern was swollen and peeled off, neutralized by a 1%% sulfuric acid aqueous solution, and washed with water to obtain a comb type. Wiring (patterned copper film). The resulting wiring was L/S = 20 μm / 75 μιη. Then, the polymer layer and the underlayer between the wirings are removed by plasma ashing. -« Next, the solder resist (PFR800; manufactured by Sun Ink Manufacturing Co., Ltd.) was 70. (: Vacuum lamination on the obtained comb-shaped wiring under conditions of 0.2 MPa.) 420 mJ of light energy was irradiated by an exposure machine having a center wavelength of 365 nm. Next, the substrate was subjected to 80. (:/10 minute heat treatment) Thereafter, a 1% aqueous solution of NafO3 was sprayed onto the surface of the substrate by a spray pressure of 2 MPa, and developed, washed with water, and dried. Then, the substrate was irradiated with a light energy of 1000 mj by an exposure machine having a center wavelength of 365 nm. Heat treatment at 150 ° C / 1 hr was performed to obtain a comb-type wiring (wiring substrate) covered with a solder resist. <Example 11> The preparation of the base layer containing a decane coupling agent of Example 1 was obtained. A glass substrate containing a base layer of a decane coupling agent. Then, the polymer layer-forming composition Y1 was applied onto a substrate having a base layer containing a decane coupling agent by spin coating, and dried at 80 ° C for 5 minutes. Then, the glass mask of the comb-type wiring (according to JPCA-BU01-2007) defined by JPCA-ET01 was formed, and the entire surface of the substrate was UV-exposed at 254 nm (exposure: i2000 mJ/cm2). By 1〇/.

68 S 201226627 . 碳酸氫鈉水進行清洗。 藉此’獲得與基板上的含矽烷偶合劑的基底層直接結 合的圖案狀聚合物層(厚度:1 μ!Π)。 然後’實施實例1的[觸媒的供給]及[鍍敷處理及加熱 處理]’而獲得具有圖案狀金屬膜的積層體。 &lt;實例12&gt; 實施實例1的[含矽烷偶合劑的基底層的製作],而獲 得具有含矽烷偶合劑的基底層的玻璃基板。 接著,可形成JPCA-ET01所規定的梳型配線(依據 JPCA-BU01-2007)的玻璃遮罩,以254 nm成圖案狀對含 矽烷偶合劑的基底層整面進行UV曝光(曝光量:12000 mJ/cm2) ° 然後,實施實例1的[聚合物層的形成],僅於圖案狀 的未進行UV曝光的含矽烷偶合劑的基底層的未曝光區 域,獲传與含矽烷偶合劑的基底層直接結合的圖案狀聚合 物層(厚度:1 μηι)。 然後,實施實例1的[觸媒的供給]及[鍍敷處理及加熱 處理],而獲得具有圖案狀金屬膜的積層體。 &lt;實例13&gt; 使用藍寶石基板(京究(KYOCERA)股份有限公司 製造、SEMI標準)代替實例i中所使用的玻璃基板,除 此以外,根據與實例1相同的順序,獲得積層體。 使用所得的積層體根據上述評價方法進行評價,結果 獲得與實例1相同的結果。 69 201226627 另外,使用氧化鋁基板(京瓷股份有限公司製造、薄 膜用基板)、矽晶圓(Optostar公司、單晶4英吋標準品) 代替藍寶石基板時,亦可獲得與實例1相同的結果。 【圖式簡單說明】 圖1 (A)〜圖1 (E)是分別依序表示本發明的積層 體的製造方法中的各製造步驟的自基板至具有圖案狀金屬 膜的積層體為止的示意性剖面圖。 圖2 (A)〜圖2 (D)是依序表示具有圖案狀金屬膜 的金屬圖案材料的製造步驟的示意性剖面圖。 圖3 (A)〜圖3 (E)是依序表示具有圖案狀金屬膜 的金屬圖案材料的製造步驟的示意性剖面圖。 圖4 (A)〜圖4 (C)是依序表示具有圖案狀金屬膜 的金屬圖案材料的製造步驟的示意性剖面圖。 圖5 (A)〜圖5 (F)是依序表示具有圖案狀金屬膜 的金屬圖案材料的製造步驟的示意性剖面圖。 【主要元件符號說明】 10 :基板 12 :含矽烷偶合劑的基底層 14a、14b、14c、14d :聚合物層 16、16b :含銅的鑛敷膜 18 :積層體 20 :圖案狀金屬膜 22、30 :遮罩 24 :金屬圖案材料68 S 201226627 . Wash with sodium bicarbonate water. Thus, a patterned polymer layer (thickness: 1 μ! Π) directly bonded to the underlayer containing the decane coupling agent on the substrate was obtained. Then, the [supply of catalyst] and [plating treatment and heat treatment] of Example 1 were carried out to obtain a laminate having a patterned metal film. &lt;Example 12&gt; The [base material layer containing a decane coupling agent] of Example 1 was obtained, and a glass substrate having a base layer containing a decane coupling agent was obtained. Next, a glass mask of a comb-type wiring (according to JPCA-BU01-2007) prescribed by JPCA-ET01 can be formed, and the entire surface of the underlayer containing the decane coupling agent is UV-exposed in a pattern of 254 nm (exposure amount: 12,000) mJ/cm2) ° Then, the [formation of the polymer layer] of Example 1 was carried out, and only the unexposed region of the base layer of the decane-containing coupling agent which was not subjected to UV exposure, which was not subjected to UV exposure, was transferred to the substrate containing the decane coupling agent. A patterned polymer layer (thickness: 1 μηι) in which the layers are directly bonded. Then, [supply of catalyst] and [plating treatment and heat treatment] of Example 1 were carried out to obtain a laminate having a patterned metal film. &lt;Example 13&gt; A laminate was obtained in the same order as in Example 1 except that the glass substrate used in Example i was used instead of the sapphire substrate (manufactured by KYOCERA Co., Ltd., SEMI standard). The obtained laminate was evaluated according to the above evaluation method, and as a result, the same results as in Example 1 were obtained. 69 201226627 In addition, when the sapphire substrate (Optostar Co., Ltd., single crystal 4 inch standard) was used instead of the sapphire substrate, an alumina substrate (manufactured by Kyocera Co., Ltd., a substrate for a film), and the same results as in Example 1 were obtained. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1(A) to FIG. 1(E) are schematic diagrams showing the respective steps from the substrate to the layered body having the patterned metal film in the respective manufacturing steps in the method for producing a layered product of the present invention. Sexual profile. 2(A) to 2(D) are schematic cross-sectional views showing the steps of manufacturing a metal pattern material having a patterned metal film in order. 3(A) to 3(E) are schematic cross-sectional views showing the steps of manufacturing a metal pattern material having a patterned metal film in order. 4(A) to 4(C) are schematic cross-sectional views showing the steps of manufacturing a metal pattern material having a patterned metal film in order. 5(A) to 5(F) are schematic cross-sectional views showing the steps of manufacturing a metal pattern material having a patterned metal film in order. [Main component symbol description] 10: Substrate 12: Base layer 14a, 14b, 14c, 14d containing a decane coupling agent: Polymer layer 16, 16b: Copper-containing ore film 18: Laminate 20: Patterned metal film 22 , 30: mask 24: metal pattern material

Claims (1)

201226627, 七、申請專利範圍: 1. 一種具有金屬膜的積層體的製造方法,其包括: 基底層形成步驟’其於基板上使包含具有反應性基的 石夕烧偶合劑的基底層形成用組成物接觸,而形成含石夕烧偶 合劑的基底層; 聚合物層形成步驟,其於上述含矽烷偶合劑的基底層 上,使包含具有聚合性基、及與鍍敷觸媒或其前驅物形成 相互作用的官能基的聚合物的聚合物層形成用組成物接觸 後,供給能量而形成聚合物層; 觸媒供給步驟,其對上述聚合物層供給鑛敷觸媒盆 前驅物;以及 〜^ 鍍敷步驟,其對上述鍍敷觸媒或其前驅物進行鍍敷, 而於上述聚合物層上形成金屬膜;且 上述基底層形成用組成物及/或上述聚合物層形成用 組成物含有含p=〇基的聚合性化合物。 、制2.如申請專利範圍第1項所述之具有金屬膜的積層體 的製造方法,其中上述含P = 0基的聚合性化合物為通式 (1)所示的化合物: [化1] 通式(1) (通式(1)中,V表示聚合性基;La表示單鍵、或 71 20122662Jx 二價有機基;Ya表示氫原子、或不具有聚合性基的取代 基;p表示1〜3的整數,q表示〇〜2的整數,卩及q滿足 p + q = 3的關係式)。 3. 如申請專利範圍第丨項或第2項所述之具有金屬膜 的積層體的製造方法,其中上述反應性基為曱基丙烯醯 基、丙烯醯基、縮水甘油基、胺基、苯乙烯基、乙烯基、 毓基、脲基、硫基、異氰酸酯基或羧基。 4. 如申請專利範圍第丨項或第2項所述之具有金屬膜 的積層體的製造方法,其中上述聚合物層形成用組成物中 還包含具有反應性基的矽烧偶合劑。 5. 如申請專利範圍第丨項或第2項所述之具有金屬膜 的積層體的製造方法,其中上述聚合物層形成用組成物中 包含具有反應性基的矽烷偶合劑、及含p = 〇基的聚合性 化合物。 6. 如申叫專利範圍第1項或第2項所述之具有金屬膜 的積層體的製造方法,其中上述基板為玻璃基板或陶曼基 板。 7. 如申請專利範圍第1項或第2項所述之具有金屬膜 的積層體的製造方法’其巾於上述鍍敷步驟後,具有進行 加熱處理的加熱步驟。. 8. 如申請專利範圍第i項或第2項所述之具有金屬膜 的積層體的製造方法,其中於上述基底層形成步驟中,於 上述基板上使上述基底層形成用組成物接觸後,藉由溶 進行上述基板的清洗。 S 72 201226627〆 9. 一種金屬圖案材料的製造方法,其包括圖案形成步 驟,其將藉由如申請專利範圍第1項至第8項中任一項所 述之具有金屬膜的積層體的製造方法而得的積層體中的金 屬膜蝕刻成圖案狀,而形成圖案狀金屬膜。 10. —種金屬圖案材料,其藉由如申請專利範圍第9 項所述之金屬圖案材料的製造方法而得。 11. 一種印刷配線板,其包含如申請專利範圍第10項 所述之金屬圖案材料。 73201226627, VII. Patent Application Range: 1. A method for producing a laminate having a metal film, comprising: a base layer forming step of forming a base layer comprising a ceramsite coupler having a reactive group on a substrate The composition is contacted to form a base layer containing a sulphur coupling agent; a polymer layer forming step on the base layer of the decane-containing coupling agent to contain a polymerizable group, and a plating catalyst or a precursor thereof a polymer layer forming composition of the interacting functional group polymer is contacted, and then supplying energy to form a polymer layer; and a catalyst supply step of supplying the mineral catalyst basin precursor to the polymer layer; a plating step of plating the plating catalyst or a precursor thereof to form a metal film on the polymer layer; and the composition for forming the underlayer layer and/or the composition for forming the polymer layer The material contains a polymerizable compound containing p=fluorenyl group. The method for producing a laminate having a metal film according to the first aspect of the invention, wherein the polymerizable compound having a P=0 group is a compound represented by the formula (1): [Chemical Formula 1] In the formula (1), V represents a polymerizable group; La represents a single bond, or 71 20122662Jx divalent organic group; Ya represents a hydrogen atom or a substituent having no polymerizable group; p represents 1 An integer of ~3, q represents an integer of 〇~2, and 卩 and q satisfy the relationship of p + q = 3.) 3. The method for producing a laminate having a metal film according to the invention of claim 2, wherein the reactive group is a mercaptopropenyl group, an acrylonitrile group, a glycidyl group, an amine group, or a benzene group. Vinyl, vinyl, fluorenyl, ureido, thio, isocyanate or carboxyl. 4. The method for producing a laminate having a metal film according to the above aspect of the invention, wherein the polymer layer-forming composition further comprises a cerium-burning coupling agent having a reactive group. 5. The method for producing a laminate having a metal film according to the invention of claim 2, wherein the polymer layer-forming composition comprises a decane coupling agent having a reactive group, and p = A polymerizable compound of a mercapto group. 6. The method of producing a laminate having a metal film according to the first or second aspect of the invention, wherein the substrate is a glass substrate or a Tauman substrate. 7. The method for producing a laminate having a metal film according to claim 1 or 2, wherein the towel has a heating step of performing a heat treatment after the plating step. 8. The method for producing a laminate having a metal film according to the above item, wherein in the base layer forming step, the base layer forming composition is contacted on the substrate. The substrate is cleaned by dissolution. S 72 201226627〆9. A method of producing a metal pattern material, comprising a pattern forming step of fabricating a laminate having a metal film according to any one of claims 1 to 8. The metal film in the laminate obtained by the method is etched into a pattern to form a patterned metal film. A metal pattern material obtained by the method for producing a metal pattern material as described in claim 9 of the patent application. A printed wiring board comprising the metal pattern material as described in claim 10 of the patent application. 73
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