TW201228822A - Laminate body and fabricating method thereof, print circuit board and circuit - Google Patents

Laminate body and fabricating method thereof, print circuit board and circuit Download PDF

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Publication number
TW201228822A
TW201228822A TW100135755A TW100135755A TW201228822A TW 201228822 A TW201228822 A TW 201228822A TW 100135755 A TW100135755 A TW 100135755A TW 100135755 A TW100135755 A TW 100135755A TW 201228822 A TW201228822 A TW 201228822A
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TW
Taiwan
Prior art keywords
copper
group
plating
polymer layer
substrate
Prior art date
Application number
TW100135755A
Other languages
Chinese (zh)
Inventor
Tomomi Tateishi
Yutaka Kubota
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Fujifilm Corp
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Publication of TW201228822A publication Critical patent/TW201228822A/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1689After-treatment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1603Process or apparatus coating on selected surface areas
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/20Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/2006Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
    • C23C18/2046Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment
    • C23C18/2073Multistep pretreatment
    • C23C18/208Multistep pretreatment with use of metal first
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/386Improvement of the adhesion between the insulating substrate and the metal by the use of an organic polymeric bonding layer, e.g. adhesive
    • H05K3/387Improvement of the adhesion between the insulating substrate and the metal by the use of an organic polymeric bonding layer, e.g. adhesive for electroless plating
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Laminated Bodies (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

The method of fabricating a patterned laminated body with a copper-containing plating film in the present invention includes: a step of forming a polymer layer, which forms a polymer layer on a substrate; a step of applying catalyst for a plating catalyst liquid containg copper ion and with pH over 3.0 to contact the polymer layer, so that the copper ions are applied to the polymer layer; a step of contacting first alkali aqueous for an alkali aqueous contacting the polymer layer to which copper ions applied; a step of plating for the polymer layer to be at least plated with copper after the step of contacting first alkali aqueous, so as to obtain a copper-containing plating film; a step of forming a pattern by etching the copper-containing plating film to form a pattern after the plating step, so that a patterned copper-containing plating film is formed.

Description

201228822 六、發明說明: 【發明所屬之技術領域】 本發明是有關於一種積層體的製造方法。更 ^本發明是有”具有圖案狀含銅錢膜的積層= 製造方法。 【先前技術】 自先前以來,於絕緣性基板的表面形成有利用金 案的配線的金屬配線基板廣泛地用於電子零件或半導體圆 件0 匕 作為該金屬圖案材料的製作方法,主要使用「 法」。該減成法是指如下的方法:於形成於基板表面的金^ ,上’設置藉由活性光線的照射而感光的感光層,對該= “層進饤成像曝光,其後進行顯影而形成抗#細像,^ ^對金屬膜進行則而形成金屬圖案,最後將抗钱_ 表面财法而獲得的金屬_巾,湘㈣在基板 屬膜Γ之::產生的定錨效應’使基板與金屬圖案(金 用作冬Μ 0密接性顯現。因此’當將所獲得的金屬圖案 ,配料,存在因金屬圖案的基板界面 了 而導致南頻特性變差的問題。;^ 凹凸化處理,必㈣爾杈_ Α了 L板表面進行 因此存在為了#彳m 強酸對基板表面進行處理’ 繁雜的板的密接性優異的金屬圖案而需要 為解决„謂題的手段,已知有如下的方法:於基板 201228822 /pif 上生成與絲板直接結合的接枝聚合物祕絲合物層, 實施錄敷,然後對所獲得的金屬膜進行姓刻 (專利^獻)。根據該方法’可不使基板的表面粗面化, 而改良基板與金屬膜的密接性。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2009-010336號公報 另-方面’近年來,為了應對電子機器的小型化、高 功能化的要求,印概路板等的微細配線正進 :。伴隨於此,配線(金屬圖案)間需要更高的絕生, 虽利用⑽處理製作配線時,要求進—步 理的金屬殘_去除性。 用触刻處 人對專散獻1巾所频揭示的配線圖案 的I成方法如了了研究,結紐現於鍍層的_處, 未必將金屬充分地去除,而需要進一步的改良。 進而,伴隨對於電子機器等的高品質化的要求,生產 ! 生車乂佳地製造配線的缺失或變細、變粗、彎曲等缺陷得到 抑制的直線性優異的微細配線變得更重要。 本發明者等人對專利文獻1中所具體揭示的配線圖案 的形成方法進行了研究,結果明確了所獲得的微細配^的 .直線性未必達到最近所要求的水準。 【發明内容】 馨於上述實際情況,本發明的目的在於提供一種積層 體的製造方法,其可獲得具有蝕刻處理時的金屬殘渣的】 5 201228822 生得到抑制, 的積層體。 並且直線性及密接性優異的圖案狀含銅鑛膜 因先人對上述課題進行了努力研究,結果發現 離子所具體使_財絲合物層的銀離子或把 :敷觸媒的影響’而產生金屬殘潰或微細配線的缺 可解、者等人發現根據上述見解,藉由以下的構成而 可解決上述課題。 (1.) 一種具有圖案狀含銅鍍膜的積層體的製造方法, ζ£> · 聚δ物層幵/成步驟,於基板上,使具有與鋼離子形成 目用的g能基、及聚合性基的聚合物接觸基板後,賦 予能量而於上述基板上形成聚合物層; 觸媒賦予步驟,使含有銅離子、且pH超過3·〇的鑛敷 觸媒液與上述聚合物層接觸,㈣聚合_料銅離子; 第1鹼性水溶液接觸步驟,使被賦予了銅離子的聚合 物層與鹼性水溶液接觸; 口 鐘敷步驟,於上述第i驗性水溶液接觸步驟後,對聚 合物層至少進行鑛銅,而獲得含銅鍍膜;以及 圖案形成步驟’於上述鑛敷步驟後,將上述含銅錄膜 蝕刻成圖案狀,而形成圖案狀含銅鍍膜。 、 (2) 如(1)所述之積層體的製造方法,其中於上述 第1鹼性水溶液接觸步驟後且於上述鍍敷步驟前,更包括 使被賦^ 了銅軒的聚合物層與還原液觀的還原步驟。 (3) 如(2)所述之積層體的製造方法,其中於上述 201228822 〇yy〇 /pxf 還原步驟後且於上述鍍敷步驟前,更包括使聚合物層與峰 性水溶液接觸的第2鹼性水溶液接觸步驟。 (4) 一種積層體’其藉由如(1)至(3)中任一項戶斤 述之積層體的製造方法而獲得。 (5 ) —種印刷線路板,其包含如(4)所述之積層體。 (6) —種電路,其包含如(4)所述之積層體。 [發明的效果] 根據本發明,可提供一種積層體的製造方法,其可獲 得具有钮刻處理時的金屬殘渣的產生得到抑制,並且直線 性及密接性優異的圖案狀含銅鍍膜的積層體。 【實施方式】 Μ卜 久稭由該方法 河不赞明的積層體的製造方法 而獲得的積層體進行說明。 首先’對本發明的與先前技術相比的特徵點進行詳述。 t上所述,本發明者等人對歧技術㈣題進行 ^ =二f發現若於聚合物層中包含規^量以上的用作 =_造成影響,結果產生金屬殘_或;: 用顯人根1 上述見解進行了研究’結果發現使 用驗性水溶液娜子的織觸媒液,並經過使 本發明=::步驟’藉此可解決上述課題。 括以下的5個Ϊ驟 含銅無的積層體的製造方法包 7 201228822, ,(1)聚合物層形成步驟,於基板上,使具有與銅離子 形成相互作用的官能基、及聚合性基的聚合物接觸基板 後’賦予能量而於基板上形成聚合物層; (2) 觸媒賦予步驟’使含有銅離子、且pH超過3 〇 的鐘敷觸媒液與聚合物層接觸’而對聚合物層賦予銅離子; (3) 第1鹼性水溶液接觸步驟,使被賦予了銅離子的 聚合物層與驗性水溶液接觸; (4) 鍍敷步驟’對聚合物層至少進行鍍銅,而獲得 銅鍍臈; (5) 圖案形成步驟,於鍍敷步驟後,將含銅鍍膜蝕刻 成圖案狀,而形成圖案狀含銅鍍膜。 以下’對各步驟中所使用的材料、及其操作方法進行 詳述。 <步驟(1):聚合物層形成步驟> 步驟(1)是於基板上,使具有與銅離子形成相互作用 的官能基、及聚合性基的聚合物接觸基板後,賦予能量而 於基板上形成聚合物層的步驟。藉由該步驟而形成的聚合 物層對應於聚合物中的與銅離子形成相互作用的官能基的 功能,於後述的觸媒賦予步驟中吸附(附著)銅離子。即, 聚合物層作為銅離子的良好的接受層(被鍍層)發揮功能。 另外,聚合性基是用於聚合物彼此的結合或與基板(戋後 述的密接輔助層)的化學結合。其結果,形成於 物 的表面的含銅鍍膜與基板之間顯現優異的密接性。 曰 更具體而言,於該步驟中,如圖1的(A)所示般準 201228822 jyy〇 /pit 備具有密接辅助層12的基板l〇,並如圖i的(b)所示般 於基板10的上部形成聚合物層14。再者,如後述般,^ 接辅助層12是任意的層。 首先,對本步驟中所使用的材料(基板、密接輔助層、 聚合物、聚合物層形成用組成物等)進行詳述,豆 步驟的程序進行詳述。 八 ° [基板] 作為用於本發明的基板,可使用先前已知的任何基 ^,較佳為可承受後述的處理條件的基板。另外,較佳為 二表有可與後述的聚合物化學結合的功能。具體而 土板本身是可藉由能量賦予(例如,曝光)而與聚合 結合者、或亦可於基板上設置可藉由能量賦予 助層^_成化學結合的中間層(例如,後述的密接輔 縣== 料二可:二子筆材料(r°「, 塑膠。具體而女,_記」中記載合 維I。 一乙馱纖維素、三乙酸纖維素、丙酸麴 曱防 Ί維素、W纖維素、祕纖維素、聚對苯: ⑽二:醋:聚乙烯、聚笨乙烯、聚丙烯、聚乙烯縮醛、 tr:錢脂、雙馬來輕胺旨、聚苯謎、液| 屬 稀等)、金屬材料(例如金屬合金、知 或類似於該些的材料。具體而言,铭 如紙、積層有塑膠的紙)、該些的組合、或類似於該些么 201228822 料等。 另外,本發明的積層體可應用於半導體封裝體、各種 電氣配線基板等。當用於此種用途時,較佳為使用以下所 示的含有絕緣性樹脂的基板,具體而言,使用包含絕緣性 樹脂的基板(絕緣性基板)、或表面具肴包含絕緣性樹脂的 層(絕緣性樹脂層)的基板(帶有絕緣性樹脂層的基板 當要獲得包含絕緣性樹脂的基板、包含絕緣性樹脂的 層時,可使用公知的絕緣性樹脂組成物。 作為絕緣性樹脂的具體例,例如可為熱硬化性樹脂、 亦可為熱塑性樹脂,另外,亦可為該些的混合物,例如作 為熱硬化性樹脂,可列舉:環氧樹脂、酚樹脂、聚醯亞胺 樹脂、聚酯樹脂、雙馬來醯亞胺樹脂、聚烯烴樹脂、異氰 酸醋樹脂、丙稀腈·丁 H乙烯(A㈣GnitrileButadiene Styrene,ABS)樹脂等。 作為環氧樹脂,例如可列舉··甲紛酴酸清漆型環氧樹 A型環氧難、雙❹型環氧樹脂、絲祕清 氧細旨、絲苯⑽料漆型環減脂、聯苯驗F 類'蔡型環氧樹脂、二環戊二烯型環氧樹脂、齡 有雜雜的料族_縮合物的環氧化物、異氰 = :=:脂環式_等。該些可單獨使用’ 作為熱塑性樹脂,例如 聚石風、I· #〜 力舉.本氧基树脂、聚喊礙、 ^本H本酬、聚_、聚醜亞胺等。 、板中,只要無損本發明的效果,亦可包含各種添 201228822 jyyo /pif 力W例如可列舉·無機粒子等填充材填充物(例如玻璃 纖維、-氧化錄子、氧化铭、黏土、滑石、氫氧化紹、 碳酸妈、雲母、錢石)、或魏系化合物(例如魏偶合 劑或石夕絲接劑等)、有機填料(例如硬化環氧樹脂、交聯 苯并胍胺樹脂、交㈣_聚合物等)、塑化劑、界面活性 劑、黏度調整劑、著色劑、硬化劑、衝擊強度改質劑、黏 接性賦予劑、抗氧化劑、紫外線吸收劑等。 若考慮將基板用於半導體封裝體、各種電氣配線基板 相途,則藉由JIS B贿(1994年)、10點平均高度法 所測定的表面粗輪度Rz較佳為5〇〇 nm以下,更佳為剛 nm以下’進而更佳為% nm以下最佳為啦以下。 下限並無特別限定’但較佳為5 rnn左右,更佳為〇。 另外,基板可於其一面或兩面具有金屬配線。金屬配 、、,可相對於基㈣表面戦為圖錄,亦可形成於整個面 的丄’可列舉由利用蝕刻處理的減成法所形成 =屬配線、或由利用電解鍍敷的半加成法所形成的金屬 _、、在,可使用由任何施工方法所形成的金屬配線。 作為構成金屬配線的材料,例如可列舉:銅、銀、錫、 麵金、鎳、鉻、鶴、钢、鋅、或鎵等。 作為具有此種金屬配線的基板,例如可使用兩面或一 面的覆鋼積層板(Copper Clad Laminate,CCL)、或將今 覆鋼積層板的細魏圖案狀喊的基板等,該些 為軟性基板,亦可為硬性基板。 一土0 [密接輔助層] 11 201228822 密接輔助層是可設置於上述基板表面上的任意的層, ,揮對基板與後述的聚合物層的密接性進行輔助的作用。 密接輔助層較佳為於對上述聚合物進行了能量賦予(例 如,曝光)時,與聚合物產生化學結合者。另外,於密接 輔助層中,亦可包含聚合起始劑。 、 ^密接輔助層的厚度必需根據基板的表面平滑性等而適 當選擇,一般而言,較佳為〇.〇】 μηι〜1〇〇μηι,更佳為〇 〇5 μηι〜20 μη!,特佳為 〇 〇5 μιη〜1() μιη。 · 另外,密接輔助層的表面平滑性就提昇所形成的含銅 鑛膜的物性的觀點而言,藉由JIS Β 〇6〇1 (1994年)、⑺ 點平均高度法所測定的表面粗糖度Rz較佳為3卿以下, Rz更佳為1 μιη以下。 密接輔助層的材料並無特別限制’較佳為與基材的密 接性良好的麟1基板由電氣絕緣性的樹脂構成時,較 =使財璃轉移點或彈性模數、線膨脹係數等熱物性的 接近的樹脂。具體而言,例如就密接的觀點而言,較佳為 使用與構成基板的絕緣性樹脂相_類的絕緣性樹脂。 脂 种,所謂用於密接辅助層的絕緣性樹 t,疋&具有可用於公知的絕緣膜的程度的絕緣性的樹 月曰,即便不是完全_緣體HI 緣性的樹脂,則亦可應用於本發明。 '目祆的浥 作為絕緣性樹脂的具體例:例如 亦可為熱塑性樹脂’另外,亦可為生= 為熱硬化性職,可列舉:職物’例如作 軋蚶知、酚樹脂、聚醯亞胺 12 201228822 〇yy〇 /pif 樹脂、聚酯樹脂、雙馬來醯亞胺樹脂、聚烯烴樹脂、異氰 酸酯樹脂等。作為熱塑性樹脂,例如可列舉:苯氧基樹脂、 聚醚砜、聚砜、聚笨砜、聚苯硫醚 '聚苯醚、聚醚醯亞胺、 ABS樹脂等。 熱塑性樹脂與熱硬化性樹脂分別可單獨使用,亦可併 用兩種以上。 另外,亦可使用含有氰基的樹脂’具體而言,可使用 ABS樹脂、或日本專利特開2010-84196號[0039]〜[0063] 中記載的「包含侧鏈上具有氰基的單元的聚合物」。 另外,若將環氧樹脂或ABS樹脂用作基板,將丁腈橡 膠(Nitrile Butadiene Rubber,NBR)或苯乙烯丁二烯橡膠 (Styrene Butadiene Rubber ’ SBR )狀聚合物用作密接輔助 層,則密接辅助層可使加熱時施加於基板或聚合物層的應 力緩和,而較佳。 岔接辅助層的形成方法並無特別限制,可列舉:將所 使用的職積層於基板上的綠,或者使必需成分溶解於 可浴解其的溶劑中,然後藉由塗料方法塗佈於基板表面 上並加以乾燥的方法等。 ,,佈綠巾的加熱溫度與時間只要選擇塗佈溶劑可充 條Ϊ即可’但就製造適應性的觀點而言,較佳為 溫Γ 200〇c以下、時間為60分鐘以内的範圍的 I二 彳圭為選擇加熱溫度為4Gt〜1GG°C、時間為 2〇刀知以内的範圍的加熱條件。再者,所使用的溶劑是對 叫於所使用的樹脂而適當選擇最佳的溶劑(例如環己嗣、 13 201228822 甲基乙基嗣)。 [聚合物] ^財所使用的聚合物具有聚合性基 =二基(以下,適當稱為相互作用性基Γ ==物中所含有㈣能基及其雜進行詳述。 驗L合性基是藉域錢予柯於聚合物彼此、或聚入 例如:列舉自由基聚合性基、陽離子聚合性基 就反應性峨點而言,較料自由絲合性基。作 基:合性基,例如可列舉:丙埽酸酯基、甲基丙烯酸酯基、 基、巴豆_基、異巴豆酸喊、順丁稀二酸酉旨 基^飽和麟喊,苯乙、乙稀基、_醯胺基、 甲基丙觸胺基等°其中’較佳為甲基丙_g旨基(甲基 丙烯醯基)、丙烯酸酯基(丙烯醯基)、乙烯基、苯乙烯基二 丙烯醯胺基、甲基丙稀醯胺基,特佳為丙觸基、甲^丙 烯醯基、苯乙烯基。 (相互作用性基) 相互作用性基是與銅離子相互作用的官能基(配位性 基、金屬離子吸附性基),可使用可與銅離子形成靜電相互 作用的官能基,或可與銅離子形成配位的含氮官能基、含 硫官能基、含氧官能基等。 土 作為相互作用性基’例如亦可列舉非解離性官能基(不 藉由解離而生成質子的官能基)等。 i 201228822 /pif 作為相互作用性基,更具體而言,可列舉:胺基、醯 胺基'醯亞胺基、脲基、三級胺基、銨基、曱脒基、三嗪 私·、二哇%•、苯并三哇基、哺°坐基、苯弁味哇基、喧淋基、 〇比0疋基、。密ί定基、η比唤基、啥嗤琳基、啥噪琳基、嗓呤基、 三嗪基、哌啶基、哌嗪基、吡咯啶基、吡唑基、苯胺基、 含有烧基胺結構的基、含有異三聚氰酸結構的基、硝基、 亞頌基、偶氮基、重氮基、疊氮基、氰基、氰酸酯基(R_〇_CN) 等含氮官能基,醚基、羥基、酚性羥基、羧基、碳酸酯基、 m基、醋基、含有N-氧化物結構的基、含有s_氧化物結構 的基、含有N-羥基結構的基等含氧官能基,噻吩基、硫醇 基、硫脲基、三聚硫氰酸基、苯并噻唑基、酼基三嗪基、 硫醚基、硫酮基、亞砜基、颯基、硫化物基、含有砜亞胺 結構的基、含有三曱基碘化亞砜鹽結構的基、磺酸基、含 有磺酸酯結構的基等含硫官能基,磷酸鹽基、磷醯胺基、 膦基、含有磷酸酯結構的基等含磷官能基,含有氯、溴等 鹵素原子的基等,於可取鹽結構的官能基中,亦可使用該 些的鹽。 其中,就極性高、對於銅離子等的吸附性能高而言, 特佳為羧基、磺酸基、磷酸基、及硼酸基等離子性極性基, 或者醚基或氰基,更佳為羧基或氰基。 於聚合物巾,可含有兩種以上作為相互作用性 些官能基。 _再者,作為上述醚基,較佳為由以下的式(X)所表 示的聚氧伸烷基。 15 201228822 jyyo /pn201228822 VI. Description of the Invention: [Technical Field to Be Invented] The present invention relates to a method of manufacturing a laminated body. Further, the present invention is a laminate having a pattern-like copper-containing money film. The prior art has been widely used for electronic parts by forming a metal wiring board using a gold wire on the surface of an insulating substrate. Or the semiconductor wafer 0 is used as the method of manufacturing the metal pattern material, and the "method" is mainly used. The subtractive method refers to a method of forming a photosensitive layer which is photosensitive by irradiation of active light on a gold formed on a surface of a substrate, and imagewise exposing the layer to the image, followed by development to form Anti-fine image, ^ ^ on the metal film to form a metal pattern, and finally the metal _ towel obtained by the anti-money _ surface financial method, Xiang (four) in the substrate is a film:: the resulting anchoring effect 'make the substrate With the metal pattern (gold is used as the winter Μ 0 adhesion property. Therefore, when the obtained metal pattern and ingredients are present, there is a problem that the south frequency characteristics are deteriorated due to the substrate interface of the metal pattern. In the case of the surface of the L-plate, there is a metal pattern which is excellent in the adhesion of the complicated board for the treatment of the surface of the L-plate, and it is necessary to solve the problem. : forming a graft polymer secret silk layer directly bonded to the silk plate on the substrate 201228822 /pif, performing recording, and then performing a surname on the obtained metal film (patent). According to the method, Substrate table In the past, in recent years, in order to cope with the small size of electronic equipment, the invention has been made to improve the adhesion between the substrate and the metal film. [PRIOR ART DOCUMENT] [Patent Document 1] Japanese Patent Laid-Open No. 2009-010336 In order to achieve high-performance and high-performance, the fine wiring of the printed circuit board is advanced: In this case, wiring (metal pattern) needs to be more excellent, and when wiring is produced by (10) processing, it is required to enter the step. The metal residue_removal. The I-forming method of the wiring pattern revealed by the occupant at the frequency of one towel is studied. The knot is now at the _ of the plating layer, and the metal is not necessarily removed sufficiently. Further improvement is required. In addition to the demand for high quality of electronic equipment, the production of fine wiring is excellent in the linearity of the defects such as the absence of the wiring, the reduction of the thickness, the bending, and the like. The present inventors have studied the formation method of the wiring pattern specifically disclosed in Patent Document 1, and as a result, it has been clarified that the obtained linearity of the fine matching does not necessarily meet the recent requirements. [Invention] In the above-described actual circumstances, an object of the present invention is to provide a method for producing a laminate, which can obtain a laminate having a metal residue during etching treatment, which is suppressed. And the pattern-like copper-containing ore film having excellent adhesion is studied by the ancestors in the above-mentioned problems, and as a result, it has been found that the ion specifically causes the silver ion of the smectite layer or the influence of the coating medium to generate a metal residue. The above-mentioned problem can be solved by the following configuration based on the above findings. (1.) A method for producing a laminate having a patterned copper-containing plating film, &£> a poly-δ layer 幵/forming step of contacting a substrate having a g-energy group and a polymerizable group forming a target with a steel ion on a substrate, and then applying energy to form a polymer layer on the substrate; a catalyst application step of contacting a mineralizing catalyst liquid containing copper ions and having a pH exceeding 3·〇 with the polymer layer, (4) polymerizing copper ions; and contacting the first alkaline aqueous solution to make The copper ion-imparting polymer layer is contacted with the alkaline aqueous solution; the bell coating step, after the first i-thotropic aqueous solution contacting step, the polymer layer is at least subjected to copper ore to obtain a copper-containing plating film; and a pattern forming step After the above-described mineral depositing step, the copper-containing recording film is etched into a pattern to form a pattern-containing copper-containing plating film. (2) The method for producing a laminate according to (1), wherein after the step of contacting the first alkaline aqueous solution and before the plating step, further comprising: polymerizing the polymer layer to which the copper anode is applied The reduction step of the reducing solution. (3) The method for producing a laminate according to (2), wherein after the 201228822 〇yy〇/pxf reduction step and before the plating step, the second step of contacting the polymer layer with the peak aqueous solution is further included. Aqueous aqueous contact step. (4) A laminate body obtained by the method for producing a laminate according to any one of (1) to (3). (5) A printed wiring board comprising the laminate according to (4). (6) A circuit comprising the laminated body as described in (4). [Effects of the Invention] According to the present invention, it is possible to provide a method for producing a layered body, which is capable of obtaining a layered body of a patterned copper-containing plating film having suppressed linearity and adhesion and having excellent linearity and adhesion. . [Embodiment] The laminate obtained by the method for producing a laminate which is not praised by the method will be described. First, the feature points of the present invention compared to the prior art will be described in detail. According to the above description, the inventors of the present invention performed the ^^2f problem on the disambiguation technique (4). If the content of the polymer layer is included in the polymer layer as the influence of =_, the result is a metal residue _ or; The human root 1 has been studied in the above-mentioned findings. As a result, it has been found that the use of the aqueous solution of the aqueous solution of the test aqueous solution can be solved by making the present invention =:: step '. The following five steps for producing a copper-free laminate include: 201228822, (1) a polymer layer forming step of forming a functional group having an interaction with a copper ion on a substrate, and a polymerizable group After the polymer contacts the substrate, 'energy is applied to form a polymer layer on the substrate; (2) the catalyst imparting step 'contacts the clock solution containing copper ions and having a pH exceeding 3 与 with the polymer layer' The polymer layer imparts copper ions; (3) the first alkaline aqueous solution contacting step causes the polymer layer to which the copper ions are added to contact the aqueous solution; (4) the plating step 'coats the polymer layer at least, The copper plating is obtained; (5) a pattern forming step of etching the copper-containing plating film into a pattern after the plating step to form a pattern-containing copper plating film. The materials used in each step and the method of operation thereof are described in detail below. <Step (1): Polymer layer forming step> Step (1) is to apply a polymer having a functional group that interacts with copper ions and a polymerizable group to a substrate, and then impart energy to the substrate. A step of forming a polymer layer on the substrate. The polymer layer formed by this step functions to adsorb (attach) copper ions in the catalyst application step to be described later, in accordance with the function of a functional group that forms an interaction with copper ions in the polymer. That is, the polymer layer functions as a good receiving layer (coated layer) of copper ions. Further, the polymerizable group is used for chemical bonding of polymers to each other or to a substrate (an adhesion assisting layer to be described later). As a result, excellent adhesion between the copper-containing plating film formed on the surface of the object and the substrate is exhibited. Specifically, in this step, as shown in FIG. 1(A), the 201228822 jyy〇/pit is provided with the substrate 10 of the adhesion auxiliary layer 12, and is as shown in (b) of FIG. A polymer layer 14 is formed on the upper portion of the substrate 10. Further, as will be described later, the auxiliary layer 12 is an arbitrary layer. First, the materials (substrate, adhesion assisting layer, polymer, polymer layer forming composition, and the like) used in this step will be described in detail, and the procedure of the bean step will be described in detail.八 ° [Substrate] As the substrate used in the present invention, any of the previously known substrates can be used, and a substrate which can withstand the processing conditions described later is preferable. Further, it is preferred that the two sheets have a function of being chemically bonded to a polymer to be described later. Specifically, the earth plate itself may be bonded to the polymer by energy imparting (for example, exposure), or may be provided on the substrate with an intermediate layer that can be chemically bonded by the energy-imparting layer (for example, the adhesion described later) Fuxian == Material 2: Two sub-pen materials (r° ", plastic. Specific and female, _ note" recorded in Weiwei I. Ethylcellulose, cellulose triacetate, strontium propionate , W cellulose, secret cellulose, poly-p-benzene: (10) Two: vinegar: polyethylene, polystyrene, polypropylene, polyethylene acetal, tr: money, double Malay light amine, poly benzene, liquid | is a rare material, metal materials (such as metal alloys, known or similar materials. Specifically, paper, laminated plastic paper), combinations of these, or similar to the 201228822 material In addition, the laminate of the present invention can be applied to a semiconductor package, various electric wiring boards, etc. When used for such applications, it is preferable to use a substrate containing an insulating resin as described below, specifically, a substrate (insulating substrate) containing an insulating resin, or A substrate having a layer (insulating resin layer) containing an insulating resin (a substrate having an insulating resin layer), when a substrate including an insulating resin or a layer containing an insulating resin is obtained, a known insulating property can be used. Specific examples of the insulating resin may be, for example, a thermosetting resin or a thermoplastic resin, or a mixture thereof. For example, as a thermosetting resin, an epoxy resin may be mentioned. Phenolic resin, polyimide resin, polyester resin, bismaleimide resin, polyolefin resin, isocyanate resin, acrylonitrile, butane H ethylene (A(tetra) GnitrileButadiene Styrene, ABS) resin, etc. Examples of the resin include a bismuth phthalate varnish type epoxy tree type A epoxy refractory, double bismuth type epoxy resin, silk secret oxygen removal, silk benzene (10) paint type ring fat reduction, and biphenyl test F Classes of 'Cai type epoxy resin, dicyclopentadiene type epoxy resin, age-related heterogeneous family _ epoxide of condensate, isocyanide = :=: alicyclic _, etc. These can be used alone 'As a thermoplastic resin, such as poly石 wind, I· #〜力举. This oxy resin, poly yoke, ^H, P, poly _, poly ugly imine, etc., in the board, as long as the effects of the invention are not impaired, can also include various additions 201228822 jyyo / The pif force W may, for example, be a filler filler such as inorganic particles (for example, glass fiber, oxidized crystal, oxidized crystal, clay, talc, hydrocortisone, methane, mica, rockstone) or a Wei compound (for example) Wei coupling agent or Shixi silk splicing agent, etc.), organic filler (such as hardened epoxy resin, crosslinked benzoguanamine resin, cross (tetra) _ polymer, etc.), plasticizer, surfactant, viscosity modifier, coloring Agent, hardener, impact strength modifier, adhesion imparting agent, antioxidant, UV absorber, etc. Considering the use of a substrate for a semiconductor package or various electrical wiring substrates, JIS B bribes (1994) The surface roughness Rz measured by the 10-point average height method is preferably 5 〇〇 nm or less, more preferably just below nm, and more preferably less than or equal to % nm. The lower limit is not particularly limited, but is preferably about 5 rnn, more preferably 〇. Further, the substrate may have metal wiring on one or both sides thereof. The metal may be arranged with respect to the surface of the base (four), or may be formed on the entire surface by 减', which may be exemplified by a subtractive method using an etching treatment, or a half-plus by electrolytic plating. The metal formed by the method can be used, and the metal wiring formed by any construction method can be used. Examples of the material constituting the metal wiring include copper, silver, tin, gold, nickel, chromium, crane, steel, zinc, or gallium. As the substrate having such a metal wiring, for example, a copper clad laminate (CCL) having two sides or one surface, or a substrate having a fine weave pattern of a conventional steel clad laminate can be used, and these are soft substrates. It can also be a rigid substrate. One soil 0 [adhesive auxiliary layer] 11 201228822 The adhesion auxiliary layer is an arbitrary layer which can be provided on the surface of the above-mentioned substrate, and serves to assist the adhesion between the substrate and the polymer layer to be described later. Preferably, the adhesion assisting layer is chemically bonded to the polymer when the polymer is subjected to energy imparting (e.g., exposure). Further, a polymerization initiator may be contained in the adhesion assisting layer. The thickness of the adhesion auxiliary layer must be appropriately selected according to the surface smoothness of the substrate, etc., and generally, it is preferably 〇.〇] μηι~1〇〇μηι, more preferably 〇〇5 μηι~20 μη!佳为〇〇5 μιη~1() μιη. In addition, the surface roughness of the adhesion-assisted layer is improved by the JIS Β 〇6〇1 (1994) and (7) point average height method from the viewpoint of improving the physical properties of the formed copper-containing ore film. Rz is preferably 3 or less, and Rz is more preferably 1 μηη or less. The material of the adhesion assisting layer is not particularly limited. When the Lin 1 substrate having good adhesion to the substrate is made of an electrically insulating resin, the heat transfer point, the modulus of elasticity, the coefficient of linear expansion, and the like are relatively high. Close to the resin of physical properties. Specifically, for example, from the viewpoint of adhesion, it is preferred to use an insulating resin such as an insulating resin constituting the substrate. The insulative tree t, which is used for the adhesion assisting layer, has an insulating tree which can be used for a known insulating film, and may be a resin which is not completely rim-edge HI. It is used in the present invention. As a specific example of the insulating resin, for example, a thermoplastic resin may be used, or a raw material may be used as a thermosetting property, and examples thereof include: a job, for example, a sputum, a phenol resin, and a polypeptone. Imine 12 201228822 〇yy〇/pif resin, polyester resin, bismaleimide resin, polyolefin resin, isocyanate resin, and the like. Examples of the thermoplastic resin include a phenoxy resin, a polyether sulfone, a polysulfone, a polysulfone, a polyphenylene sulfide, a polyphenylene ether, a polyether quinone, and an ABS resin. The thermoplastic resin and the thermosetting resin may be used singly or in combination of two or more. In addition, a resin containing a cyano group may be used. Specifically, an ABS resin or a unit having a cyano group on a side chain as described in JP-A-2010-84196 [0039] to [0063] may be used. polymer". In addition, if an epoxy resin or an ABS resin is used as a substrate, a Nitrile Butadiene Rubber (NBR) or a Styrene Butadiene Rubber 'SBR-like polymer is used as the adhesion auxiliary layer, and the adhesion is made. The auxiliary layer can be used to relax the stress applied to the substrate or the polymer layer upon heating, and is preferable. The method of forming the splicing auxiliary layer is not particularly limited, and examples thereof include greening the layer used on the substrate, or dissolving the essential component in a solvent which can be bathed, and then applying it to the substrate by a coating method. a method of drying on the surface, and the like. The heating temperature and time of the green towel can be adjusted by selecting a coating solvent. However, from the viewpoint of manufacturing flexibility, it is preferably in the range of 200 〇c or less and 60 minutes or less. I is a heating condition in which the heating temperature is 4 Gt to 1 GG ° C and the time is within 2 knives. Further, the solvent to be used is appropriately selected from the resin to be used (e.g., cyclohexanium, 13 201228822 methylethylguanidine). [Polymer] The polymer used in the financial system has a polymerizable group = a diradical group (hereinafter, appropriately referred to as an (interacting group) = (a) energy group and its impurities are described in detail. In the case where the polymer is polymerized or polymerized, for example, a radical polymerizable group or a cationic polymerizable group is used as a reactive defect, and a free silky group is used. For example, a propionate group, a methacrylate group, a base, a croton base, an isocyanate shout, a cis-butyl succinate, a saturated base, a phenylethyl group, a vinyl group, a decylamine a group, a methylpropenylamine group, etc. wherein 'preferably a methyl propyl group-g group (methacryl fluorenyl group), an acrylate group (propylene fluorenyl group), a vinyl group, a styryl propylene propylene group Methyl acrylamide, particularly preferably a propyl group, a propylene group, a styryl group. (Interactive group) An interactive group is a functional group that interacts with copper ions (coordinating group) , metal ion-adsorbing group), may use a functional group capable of forming electrostatic interaction with copper ions, or may form a coordination with copper ions A nitrogen-containing functional group, a sulfur-containing functional group, an oxygen-containing functional group, etc. The earth as an interactive group 'is, for example, a non-dissociable functional group (a functional group which does not generate a proton by dissociation), etc. i 201228822 /pif Specific examples of the interactive group include an amine group, a guanamine group, a sulfhydryl group, a ureido group, a tertiary amino group, an ammonium group, a decyl group, a triazine group, and a diwax. , benzotrimyl, sulphate, benzoquinone, hydrazino, hydrazine, hydrazine, hydrazine, η, 啥嗤, 啥嗤, 啥, 啥a group, a triazinyl group, a piperidinyl group, a piperazinyl group, a pyrrolidinyl group, a pyrazolyl group, an anilino group, a group having a alkyl group structure, a group containing an iso-cyanuric acid structure, a nitro group, an anthranylene group, Nitrogen-containing functional groups such as azo, diazo, azide, cyano, cyanate (R_〇_CN), ether group, hydroxyl group, phenolic hydroxyl group, carboxyl group, carbonate group, m group, An oxy-functional group such as a vinegar group, a group containing an N-oxide structure, a group containing an s_oxide structure, a group having an N-hydroxy structure, a thienyl group, a thiol group, a thiourea group, Polythiocyanate group, benzothiazolyl group, mercaptotriazinyl group, thioether group, thioketo group, sulfoxide group, sulfhydryl group, sulfide group, group containing sulfone imine structure, containing trimethyl iodide a phosphorus-containing functional group such as a sulfoxide salt-based group, a sulfonic acid group, or a sulfonate-containing group-containing group; a phosphate-containing functional group such as a phosphate group, a phosphonium amino group, a phosphino group, or a phosphate group-containing group; And a salt of a halogen atom such as bromine, etc., which may be used in a functional group having a salt structure. Among them, a carboxyl group or a sulfonic acid is preferred because of its high polarity and high adsorption performance for copper ions and the like. a base group, a phosphate group, and a boronic acid group, or an ether group or a cyano group, more preferably a carboxyl group or a cyano group. In the polymer towel, two or more kinds of functional groups may be contained as an interaction. The ether group is preferably a polyoxyalkylene group represented by the following formula (X). 15 201228822 jyyo /pn

式(X) * '(Y〇)n-RC 式(X)令’ Y表示伸烧基,RC 〜30的數。*表示鍵結位置。 作為伸烧基’較佳為碳數為卜3 ▲ 地列舉伸乙基、伸丙基。 〜體而吕’可較佳 作為烧基,較佳為碳數為卜1〇 地列舉曱基、乙基。 具體而5,可較佳 η表不1〜30的數,較佳為3〜23。 _ 值’該數值可藉由公知的方法(核磁共振^ ’ η:不平句 Resonance,NMR ))等來測定。 ear Magnetic = 分子量並無特別限制,但較佳為 〇〇〇乂上7G^下,更佳為2_以上 其’就聚合靈敏度的觀點而言,較佳為細⑽以上。 ^外,聚合物的聚合度並無_ ⑺聚體以上者,更料2G聚體以上者吏用 以下,特佳為麵聚體下相更佳為厕聚體 (較佳形態1) 合物的第_種較佳的職,可列舉包含由下述 式⑷所麵的具絲合縣料 ==、及由下糊所表示的具有IS 祕的早% (以τ ’㈣當稱為相互作祕絲幻的共 201228822 jyys/pif 聚物。再者,所謂單元,是指重複單元。 [化1]Formula (X) * '(Y〇)n-RC Formula (X) Let 'Y denote the number of extended bases, RC ~ 30. * indicates the bonding position. As the stretching group, it is preferable that the carbon number is 3 ▲ and the ethyl group and the stretching group are listed. The hexyl group and the ethyl group are preferably used as the alkyl group, and the carbon number is preferably exemplified. Specifically, 5 may preferably have a number of 1 to 30, preferably 3 to 23. The value of _ value can be determined by a known method (nuclear magnetic resonance η η: Resonance, NMR) or the like. Ear Magnetic = The molecular weight is not particularly limited, but is preferably 7 G or less, more preferably 2 or more. From the viewpoint of polymerization sensitivity, it is preferably fine (10) or more. ^, the degree of polymerization of the polymer is not _ (7) above the polymer, more than 2G polymer or more, the following is the best, especially the surface polymer lower phase is better as a toilet polymer (preferred form 1) The preferred position of the _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ A total of 201228822 jyys/pif polymer. In addition, the so-called unit refers to the repeating unit.

(a) (b) 上述式(a)及式(b)中,R1〜R5分別獨立地表示氣 原子、或者經取代或未經取代的烧基。 當R1〜R5為經取代或未經取代的烷基時,作為未經取 代的烷基,可列舉曱基、乙基、丙基或丁基。另外,作為 經取代的烷基,可列舉由甲氧基、氣原子、溴原子或氟原 子等取代的甲基、乙基、丙基、丁基。 μ 再者’作為R1,較佳為由氫原子、曱基或溴原子取代 的曱基。 作為R2,較佳為由氫原子、甲基或溴原子取代的曱基。 作為R3,較佳為氫原子。 作為R4,較佳為氫原子。 作為R5,較佳為由氫原子、曱基或溴原子取代的曱基。 上述式(a)及式(b)中,X、Υ及Ζ分別獨立地表 示單鍵、或者經取代或未經取代的二價的有機基。作為二 價的有機基’可列舉:經取代或未經取代的脂肪族烴基(較 17 201228822 pif 佳為碳數為丨〜…經取代或未練代的料族烴 佳為碳數為6〜12 )、-〇-、各、-SCV、-N(RM R :絲)、 -CO-、-NH-、·(:〇〇_、(〇ΝΗ_、或將該些組合而成的基(例 如伸絲氧基、伸絲氧基·、基幾氧基等)等。 作為經取代或未經取代的脂肪族烴基,較佳為亞甲 基、伸乙基、伸丙基或伸丁基,或者該些基由甲氧基、氯 原子、溴原子或氟原子等取代而成的基。 作為經取代或未經取代的芳香族烴基,較佳為未經取 代的伸笨基,或由甲氧基、氯原子、_子、紐原子等 取代的伸苯基。 作為X、Y及Z,可較佳地列舉單鍵、酯基(_c〇〇_)、 醯胺基(-CONH-)、醚基(_〇_)、或者經取代或未經取代的芳 香族烴基等,更佳為單鍵、酯基(_c〇〇_)、醯胺基 (-CONH·)。 土 上述式(a)及式(b)中,L1及L2分別獨立地表示單 鍵、或者經取代或未經取代的二價的有機基。二價的有機 基的定義與上述X、Y及Z中所述的二價的有機基相同。 作為L,較佳為脂肪族烴基、芳香族烴基、或者具有 胺基甲酸酯鍵或脲鍵的二價的有機基(例如脂肪族烴基), 其中,較佳為,碳數為1〜9者。再者,此處所謂Ll的總 碳數,是指由L1所表示的經取代或未經取代的二價的有機 基中所含有的總碳原子數。 作為L1的結構,更具體而言,較佳為由下述式(M) 或式(1-2)所表示的結構。 201228822 wa /pif [化2] /RaNL攻(a) (b) In the above formulae (a) and (b), R1 to R5 each independently represent a gas atom or a substituted or unsubstituted alkyl group. When R1 to R5 are a substituted or unsubstituted alkyl group, examples of the unsubstituted alkyl group include a mercapto group, an ethyl group, a propyl group or a butyl group. Further, examples of the substituted alkyl group include a methyl group, an ethyl group, a propyl group and a butyl group substituted by a methoxy group, a gas atom, a bromine atom or a fluorine atom. Further, 'as R1, preferably a fluorenyl group substituted by a hydrogen atom, a fluorenyl group or a bromine atom. As R2, a fluorenyl group substituted by a hydrogen atom, a methyl group or a bromine atom is preferred. R3 is preferably a hydrogen atom. As R4, a hydrogen atom is preferred. As R5, a fluorenyl group substituted by a hydrogen atom, a fluorenyl group or a bromine atom is preferred. In the above formulae (a) and (b), X, hydrazine and hydrazine each independently represent a single bond or a substituted or unsubstituted divalent organic group. The divalent organic group 'is exemplified by a substituted or unsubstituted aliphatic hydrocarbon group (compared with 17 201228822 pif preferably having a carbon number of 丨~... substituted or unmodified hydrocarbons preferably having a carbon number of 6 to 12) ), -〇-, each, -SCV, -N(RM R: silk), -CO-, -NH-, ·(:〇〇_, (〇ΝΗ_, or a combination of these (for example) a stretched oxy group, a stretched oxy group, a benzyloxy group, etc.), etc. As the substituted or unsubstituted aliphatic hydrocarbon group, a methylene group, an exoethyl group, a propyl group or a butyl group is preferable. Or a group in which the group is substituted by a methoxy group, a chlorine atom, a bromine atom or a fluorine atom, etc. As the substituted or unsubstituted aromatic hydrocarbon group, it is preferably an unsubstituted extended group, or a substituted phenyl group substituted with an oxy group, a chlorine atom, a _ sub, a ruthenium atom or the like. As X, Y and Z, a single bond, an ester group (_c〇〇_), a decylamino group (-CONH-) is preferably exemplified. And an ether group (_〇_), or a substituted or unsubstituted aromatic hydrocarbon group, etc., more preferably a single bond, an ester group (_c〇〇_), an amidino group (-CONH·). a) and (b), L1 and L2 are independent The site represents a single bond or a substituted or unsubstituted divalent organic group. The definition of the divalent organic group is the same as the divalent organic group described in the above X, Y and Z. An aliphatic hydrocarbon group, an aromatic hydrocarbon group, or a divalent organic group having a urethane bond or a urea bond (for example, an aliphatic hydrocarbon group), wherein the carbon number is preferably from 1 to 9. Further, this is The total carbon number of L1 is the total number of carbon atoms contained in the substituted or unsubstituted divalent organic group represented by L1. As the structure of L1, more specifically, it is preferably The structure represented by the following formula (M) or formula (1-2) 201228822 wa /pif [Chemical 2] /RaNL attack

Η Η H 式(1-1) 式(卜2) 上述式(1-1)及式(1-2)中,Ra及Rb分別獨立為利 用選自由碳原子、氫原子、及氧原子所組成的組群中的2 個以上的原子所形成的二價的有機基。可較佳地列舉:經 取代或未經取代的亞甲基、伸乙基、伸丙基或伸丁基、或 者環氧乙烷基、二環氧乙烷基、三環氧乙烷基、四環氧乙 烷基、二環氧丙烷基、三環氧丙烷基、四環氧丙烷基。 另外,L2較佳為單鍵,或者直鏈、分支或環狀的伸烧 $,芳香族基,或者將該些組合而成的基。將該伸烷基與 芳香族基組合而成的基可進而經由醚基、酯基、醯胺基、 ,基甲酸酯基、脲基而組合。其中,L2較佳為單鍵、^總 碳數為1〜15,特佳為未經取代。再者,此處所謂l2的^ 碳數’是指由L2所表示的經取代或未經取代的二價的有機 基中所含有的總碳原子數。 具體而言,可列舉:亞甲基、伸乙基、伸丙基、伸丁 基塔伸苯基、及該些基由甲氧基、織、氣原子、漠原子、 U等取代而成的基’進而將該些組合而成的基。 該官能基義):上:ir與銅離子相互作用的官能基。 19 201228822Η Η H Formula (1-1) Formula (II) In the above formula (1-1) and formula (1-2), Ra and Rb are each independently composed of a carbon atom, a hydrogen atom, and an oxygen atom. A divalent organic group formed by two or more atoms in the group. Preferably, a substituted or unsubstituted methylene group, an exoethyl group, a propyl group or a butyl group, or an oxirane group, a dioxirane group, a trioxirane group, Tetraethylene oxide group, propylene oxide group, tripropylene oxide group, tetrapropylene oxide group. Further, L2 is preferably a single bond, or a linear, branched or cyclic stretch, an aromatic group, or a combination of these. The group in which the alkylene group and the aromatic group are combined may be further combined via an ether group, an ester group, a guanamine group, a urethane group or a urea group. Among them, L2 is preferably a single bond, and the total carbon number is from 1 to 15, particularly preferably unsubstituted. Here, the "carbon number" of l2 herein means the total number of carbon atoms contained in the substituted or unsubstituted divalent organic group represented by L2. Specific examples thereof include a methylene group, an ethylidene group, a propyl group, a butyl group, and a phenyl group, and the groups are substituted by a methoxy group, a woven ring, a gas atom, a desert atom, and U. Base 'and then combine these groups. The functional group): upper: ir functional group that interacts with copper ions. 19 201228822

Ab乍為由上述式(3)所表示的聚合性基單元的較佳形 態’可列舉由下述式(c)所表示的單元。 [化3]The preferred form of the polymerizable group represented by the above formula (3) is a unit represented by the following formula (c). [Chemical 3]

中’…^及^定義與由式⑷所表 :的早疋中的各基的定義相同。A表示氧原子、或N ==姐基’較佳為氮原子或魏為1〜5的未經取 ⑷作所為表由Λΐ:表科單福㈣’可列舉由式 [化4]The definitions of '...^ and ^ are the same as those of the bases in the early days represented by the formula (4). A represents an oxygen atom, or N == sister group' is preferably a nitrogen atom or Wei is 1 to 5, which is not taken. (4) is used as a table: 表:表科单福(四)' can be enumerated by the formula [Chemical 4]

式⑷ 的定義與由式(a)所表示 式(d)中,R1、R2、及 L! 20 201228822 〇yy〇 /pif 的單元中的各基的定義相同。A及T表示氧原子、或nR (R表示氫原子或烷基’較佳為氫原子或碳數為1〜5的未 經取代的烷基)。 上述式(d)中,丁較佳為氧原子。 另外,上述式(c)及式(d)中,L1較佳為未經取代 的伸烷基、或者具有胺基甲酸酯鍵或脲鍵的二價的有機 基,更佳為具有胺基f酸酯鍵的二價的有機基,特佳為總 碳數為1〜9者。 另外,作為由式(b)所表示的相互作用性基單元的較 佳形態’可列舉由下述式(e)所表示的單元。 [化5] R5The definition of the formula (4) is the same as the definition of each group in the unit of R1, R2, and L! 20 201228822 〇yy〇 /pif in the formula (d) represented by the formula (a). A and T represent an oxygen atom or nR (R represents a hydrogen atom or an alkyl group ' is preferably a hydrogen atom or an unsubstituted alkyl group having a carbon number of 1 to 5). In the above formula (d), the butyl group is preferably an oxygen atom. Further, in the above formula (c) and formula (d), L1 is preferably an unsubstituted alkylene group or a divalent organic group having a urethane bond or a urea bond, more preferably an amine group. The divalent organic group of the acid ester bond is particularly preferably a total carbon number of 1 to 9. In addition, as a preferable form of the interactive group unit represented by the formula (b), a unit represented by the following formula (e) is exemplified. [5] R5

QQ

式(e) 上逑式(e)中 〇〇 一……'^丨夂L的疋義與由式(b)所表示的 基的定義相同。Q表示氧原子、或他,U,表 的烧基)/絲’祕為氫料或碳數為1〜5的未經取代 烷基另二香ΐ上0:: L2較佳為直鏈、分支或環狀的伸 、土 或者將該些組合而成的基。 21 201228822 .-- 1 π 二式(e)中,L2中的與相互作用性基的連結部 : ^有直鏈、分支或環狀的伸烧基的二價的有機 土,s k,該二價的有機基較佳為總碳數為1〜10。 相互二=為其他較佳的形態,式⑷中的L2中的與 機基3 Ϊ連ΐ部位較佳為具有芳香族基的二價的有 土上ΐ取人〜一^貝的有機基較佳為總碳數為6〜15。 元,含ϋη元較佳為相對於聚合物中的所有單 3有5莫耳/〇〜5〇莫耳% ’更佳 %。若未滿5莫耳%,則存在反應性、(硬=== 情況,若超過5。莫耳%,則於合成時容易膠:而難 的觀點而言,較佳為;::ί:二離子的吸附性 軸〜95莫耳%,更佳為丨。莫耳; (較佳形態2) 冥耳/〇。 式二為較佳的形態,可列舉包含由下述 二式⑻及式(c)所表示的單元的共聚物。In the formula (e), the above formula (e) is the same as the definition of the base represented by the formula (b). Q represents an oxygen atom, or he, U, a burnt base) / a silky substance is a hydrogen material or an unsubstituted alkyl group having a carbon number of 1 to 5 on the other dioxins. 0:: L2 is preferably a straight chain, Branch or ring extension, soil or a combination of these. 21 201228822 .-- 1 π In the formula (e), the junction with the interacting group in L2: ^ a divalent organic soil having a linear, branched or cyclic stretching group, sk, the second The organic group of the valence is preferably a total carbon number of from 1 to 10. The other two are the other preferred forms, and the L3 in the formula (4) is preferably a bivalent organic group having an aromatic group and having an aromatic group. The total carbon number is 6 to 15. Preferably, the yttrium-containing element is preferably 5 mils / Å to 5 angstroms % relative to all of the monomers 3 in the polymer. If it is less than 5 mol%, there is reactivity, (hard === case, if it exceeds 5. mol%, it is easy to gel at the time of synthesis: from a difficult point of view, it is preferable; :: ί: The adsorption axis of the diion is preferably ~95 mol%, more preferably 丨. Molar; (better form 2) 耳耳/〇. Formula 2 is a preferred form, and it can be exemplified by the following formula (8) and (c) a copolymer of the units indicated.

V (C) 22 201228822 ^yy〇 /pif _由式(A)所表T的單元與由上述式⑷所表示的單 元相同’各基的說明亦相同。 由式(B)所表不的單元中的R5'X&L2與由上述式 (b)所表示的單元中的R5、X及L2相同 ,各基的說明亦 相同。 式(B)巾的Wa表示除後述的由V所表示的親水性 土或,前驅物基以夕 6 卜的與鋼離子形成相互作用的官能基。 :(C)巾’ R6分·立地表示氫原子、或者經取代 ==代的烧基。院基的定義與上述^ Rl〜R5所表示的 二严中A表示單鍵、或者經取代或未經取代的 一=、有機土。—價的有機基^ ^ ^ ^ ^ 所表示的二價的有機基相同。这由Χ Η 式(C)中,τ3 志 二價的右麵-Μ V早鍵、或者經取代或未經取代的 :示的二=有機基的定義與上述由加所 式(C)中,ν矣-ώ 水性基,只要Θ觀—ώ下水性基或其前驅物基。所謂親 可列舉羥基、:酸:等水J生的基:則並無特別限定,例如 是指藉由規定的處二(外’所謂親水㈣时驅物基, 護的羧基等。 由ΤΗΡ (2_四虱吡喃基)保 作為親水性基,就聚合物層容易與各種水性處理液戒 23 201228822 jyy〇/\>iL· 鍍液潤濕 八一鄉幻狹的濶濕性變佳,且進一步顯規太 發明的效果的觀點而言,較佳A " 性極性基,具體而言,可列舉性極性基。作為離子 麻其甘& 4 L 幾酸基、石黃酸基、填酸基、 硼g欠基。其中,就酸性適度( 而言,較佳為紐基。 I、他^基)的减點 尤其,於由式(C)所表示的置_ , 分解豆#它了的早兀中,就酸性適度(不 刀解其他s肊基)、於鹼性水溶液 行乾燥則容易因環狀結構㈣對進 盔Λ, ^… / M疏水性的觀點而言,較佳 為V為羧酸基、且L3的與v f 1 環結構。此處,作為4員〜8員的具有4員〜8員的 基磁、環辛基、苯基,其中,較佳為 另外,於由S(c)所表示的單元中,就 分解其他官能基)、於鹼性水溶液中 -^又 為紐基、且L3的鏈長為6個〜18個原 σ 處’所謂L3的鏈長’表示式(c)中 _ &較佳。 疋指U與V之間較佳為以6個 的距離且 作兔Τ3 ΛΑΜ e U眾千的範圍相分離。 乍為L的鏈長,更佳為6個〜14個原 : 個〜12個原子。 而更佳為6 上述聚合物的第二種較佳的形態中的 含量如下所述。 早凡的較佳的 由式(Α)所表示的單元就反應性(硬化性、聚人性) 及抑制合成時的膠化的觀點而言’較佳為相對於聚合口物中V (C) 22 201228822 ^yy〇 /pif _ The unit of the table T represented by the formula (A) is the same as the unit represented by the above formula (4). R5'X&L2 in the unit represented by the formula (B) is the same as R5, X and L2 in the unit represented by the above formula (b), and the description of each group is also the same. The Wa of the formula (B) towel represents a hydrophilic group which is represented by V, which will be described later, or a functional group which forms a interaction with the steel ions in the precursor group. : (C) towel 'R6 points · Stands for a hydrogen atom or a substituted == generation. The definition of the hospital base is the same as the above-mentioned ^ R1 to R5, and A represents a single bond, or a substituted or unsubstituted one = organic soil. - The organic group of the valence ^ ^ ^ ^ ^ represents the same divalent organic group. This is defined by Χ 式 in formula (C), τ3 is the divalent right-ΜV early bond, or substituted or unsubstituted: the definition of the two = organic group and the above formula (C) , ν矣-ώ Aqueous base, as long as it is a submerged-underwater base or its precursor base. The term "hydroxy" or "acid" is not particularly limited, and is, for example, a predetermined group (external 'so-called hydrophilic (four)), a carboxyl group, etc. 2_tetrapyrranyl) as a hydrophilic group, the polymer layer is easy to be wetted with various aqueous treatment liquids. 2012 20122222 jyy〇/\>iL· plating solution From the viewpoint of further emphasizing the effects of the invention, a preferred A " polar group, specifically, a polar group is exemplified as the ionic gamma & 4 L acid group, the tartaric acid group , the acid-filling group, and the boron-based group, wherein, in terms of acidity (in terms of, preferably, New Zealand, I, the base), in particular, the decomposition of the bean is represented by the formula (C). # It's early in the sputum, it is moderately acidic (not to smash other s sulfhydryl groups), drying in an alkaline aqueous solution is easy due to the ring structure (4) for the helmet, ^... / M hydrophobicity point of view, Preferably, V is a carboxylic acid group, and a Vf 1 ring structure of L3. Here, as a member of 4 to 8 members, a base magnetic, cyclooctyl group, or phenyl group having 4 to 8 members Preferably, in addition, in the unit represented by S(c), other functional groups are decomposed), in the alkaline aqueous solution, -^ is a Newtyl group, and the chain length of L3 is 6 to 18 The 'chain length of L3' at the original σ means that _ & is preferred in the formula (c). It is preferable that the U and V are separated by a distance of six and a range of the rabbit Τ 3 ΛΑΜ e U thousands.乍 is the chain length of L, more preferably 6 ~ 14 original: ~ ~ 12 atoms. More preferably, the content of the second preferred embodiment of the above polymer is as follows. The preferred unit represented by the formula (Α) is preferably relative to the polymerization port from the viewpoints of reactivity (hardenability, aggregation) and inhibition of gelation during synthesis.

24 則22882224 228822

Jyy8/pif 的所有單元,含有5莫耳%〜5 〜30莫耳%。 莫耳/°,更佳為5莫耳% 式的觀 濕—的顯影性與耐 元,含有1〇莫耳%〜7〇tt為相f於聚合物令的所有單 耳%,特佳為30莫耳%〜5〇莫°耳%佳為2〇莫耳%〜60莫 性值形態中的離子性極 15 m ι 基魏基的情況下為酸值),較佳為 U 職>l/g 〜7.0 mmol/g,更佳為 17 mm〇i/g〜5〇 :Τ2,特佳為1,9 mmol/g〜4.0 mm〇i/g。藉由離子性極 值為該範圍,可使利用水溶液的顯影性賦予與濕熱經時 時的密接力下降的抑制並存。 作為上述聚合物的具體例,可使用日本專利特開 2009-007540號公報的段落[0106]〜段落[〇112]中所記載的 聚合物作為具有自由基聚合性基、及與銅離子形成相互作 用的官能基的聚合物。另外,可使用日本專利特開 2006-13 5271號公報的段落[0065]〜段落[〇〇7〇]中所記載的 聚合物作為具有自由基聚合性基與離子性極性基的聚合 物。可使用US2010-080964號的段落[0030]〜[0108]段落中 所記載的聚合物作為具有自由基聚合性基、與銅離子形成 相互作用的官能基、及離子性極性基的聚合物。 25 201228822 jyy〇 / 另外,亦可列舉如下的聚合物。 [化ΠAll units of Jyy8/pif contain 5 mol%~5~30 mol%. Mohr / °, more preferably 5 mol % - type of wet - developability and resistance, containing 1 〇 mol% ~ 7 〇 tt is the phase f of all the monocular % of the polymer, especially good 30 mol%~5〇莫° ear% is 2 〇mol %~60 Mo value morphological ionic pole 15 m ι based Wei group in the case of acid value), preferably U job> l / g ~ 7.0 mmol / g, more preferably 17 mm 〇 i / g ~ 5 〇: Τ 2, particularly preferably 1,9 mmol / g ~ 4.0 mm 〇 i / g. When the ionicity is in this range, the developability of the aqueous solution can be suppressed and the decrease in the adhesion of the wet heat can be suppressed. As a specific example of the above-mentioned polymer, the polymer described in paragraphs [0106] to [〇112] of JP-A-2009-007540 can be used as a radical polymerizable group and a mutual ion with copper ions. Functional polymer of the functional group. Further, as the polymer having a radical polymerizable group and an ionic polar group, the polymer described in paragraph [0065] to paragraph [〇〇7〇] of JP-A-2006-13 5271 can be used. The polymer described in paragraphs [0030] to [0108] of US2010-080964 can be used as a polymer having a radical polymerizable group, a functional group which forms an interaction with a copper ion, and an ionic polar group. 25 201228822 jyy〇 / In addition, the following polymers may also be mentioned. [chemical

26 201228822 jyy»/pif26 201228822 jyy»/pif

(聚合物的合成方法) ,上述聚合物的合成方法並無特別限定,所使用的單體 ^為市售品、或將公知的合成方法加以組合而合成的聚 口例可參照日本專利公開2辦_7662號的段落[〇岡 所法料合成上述聚合物。 田聚合性基為自由基聚合性基時,可較 偏合成方法。 作用性基的單體/2自由絲合性基的單體、具有相互 單體及具有自方法;U)使具有相互作用性基的 由基^性基前驅物的單體共聚,繼而利用 27 201228822 /μη 驗等的處理導人自由基聚合性基的方法;⑹使具有相互 作用基的單體及具有用於導人自由基聚合性基的反應性 基的單體共聚’然後導人自由絲合性基的方法。 、就合成適應性的觀點而言,較佳的方法為上述ϋ)及 上述iii)的方法。合成時的聚合反應的種類並無特別限定, 較佳為以自由基聚合來進行。(Method for synthesizing a polymer) The method for synthesizing the above-mentioned polymer is not particularly limited, and a monomer which is a commercially available product or a combination of a known synthesis method can be referred to Japanese Patent Publication No. 2 The paragraph of _7662 is used [Shengang's method to synthesize the above polymer. When the field polymerizable group is a radical polymerizable group, the synthesis method can be favored. a monomer having a functional group of 2 or 2 free-linking groups, having a mutual monomer and having a self-method; and U) copolymerizing a monomer having a reactive group and a precursor of the radical, and then utilizing 27 201228822 /μη test processing method for introducing a radical polymerizable group; (6) copolymerizing a monomer having an interactive group and a monomer having a reactive group for introducing a radical polymerizable group, and then introducing freedom A method of silky group. From the viewpoint of synthetic suitability, the preferred methods are the above-mentioned methods and the methods of the above iii). The type of the polymerization reaction at the time of the synthesis is not particularly limited, and it is preferably carried out by radical polymerization.

再者,。當合成包含由上述式(A)、式(B)、及式 所表不j單元的共聚物時,可使用具有親水性基或其前驅 物基的單體、具㈣親水性基或其前驅物基料的相互作 用性基的單體,以上述丨)〜上述出)的方法合 的共聚物。 I (聚合物層形成用組成物) 較佳為於聚合物層形成用組成物中含有上述聚合物及 溶劑,可於步驟(1)的操作時使用。 聚合物層形成用組成物中的聚合物的含量並無 制’相對於組成物總量,較佳為2質量%〜50質量% ^ ,為5質〜3G質量%。#為上述範圍内,則組成物 處理性優異,容易控制聚合物層的層厚。 、 較佳為於聚合物層形成用組成物中含有溶劑。 ⑽可^的賴並無制蚊,例何贿水、甲醇、 - 醇、乙一醇、丙三醇、丙二醇單甲醚等醇系、、容节丨 m _、甲基乙基酮、環已酮等_溶劑%酿 丙腈專腈系溶劑,乙酸甲81、乙酸乙^;Again, When synthesizing a copolymer comprising a unit represented by the above formula (A), formula (B), and formula, a monomer having a hydrophilic group or a precursor thereof, a (four) hydrophilic group or a precursor thereof may be used. The monomer of the interactive group of the base material is a copolymer of the above-mentioned 丨) to the above-mentioned method. I (polymerization layer-forming composition) It is preferred to use the polymer and the solvent in the polymer layer-forming composition, and it can be used in the operation of the step (1). The content of the polymer in the polymer layer-forming composition is not required to be 'from 2% by mass to 50% by mass based on the total amount of the composition, and is from 5 to 3 % by mass. When # is in the above range, the composition is excellent in handleability, and it is easy to control the layer thickness of the polymer layer. Preferably, the polymer layer-forming composition contains a solvent. (10) There are no mosquitoes, such as bribes, methanol, alcohols, glycols, glycerol, propylene glycol monomethyl ether, etc., and 容 丨 m _, methyl ethyl ketone, ring Ketone, etc. _ Solvent% styrene-acrylic acid-specific nitrile solvent, acetic acid A 81, acetic acid E;

28 201228822 二曱酯、破酸二乙酯等碳酸酯系溶劑,除此以外,亦可列 舉醚系溶劑、二醇系溶劑、胺系溶劑、硫醇系溶劑、鹵素 系溶劑等。 其中’較佳為醯胺系溶劑、嗣系溶劑、腈系溶劑、碳 酸酯系溶劑’具體而言,較佳為丙酮、二曱基乙醯胺、曱 基乙基酮、環己酮、乙腈、丙腈、曱基Π比Π各咬酮、碳酸 二曱酯。 聚合物層形成用組成物中的溶劑的含量並無特別限 制,相對於组成物總量,較佳為50質量%〜98質量%,更 佳為70質量%〜95質量%。若為上述範圍内,則組成物的 處理性優異,聚合物層的層厚的控制等較容易。 (步驟(1)的程序) 物層形成用组成物)塗佈於基板上的方法等。28 201228822 A carbonate-based solvent such as diterpene ester or diethyl acrylate may be an ether solvent, a glycol solvent, an amine solvent, a thiol solvent, or a halogen solvent. Wherein 'preferably a guanamine-based solvent, an oxime-based solvent, a nitrile-based solvent, or a carbonate-based solvent' is specifically acetone, dimercaptoacetamide, mercaptoethyl ketone, cyclohexanone, acetonitrile. , propionitrile, fluorenyl hydrazine, ketone, dinonyl carbonate. The content of the solvent in the polymer layer-forming composition is not particularly limited, and is preferably 50% by mass to 98% by mass, and more preferably 70% by mass to 95% by mass based on the total mass of the composition. When it is in the above range, the handleability of the composition is excellent, and the control of the layer thickness of the polymer layer is easy. (Procedure of Step (1)) A method of applying a composition for forming a layer of a layer on a substrate.

輥式塗佈法等公知的方法。 '擠出塗佈 使上述聚合物於基板上(或密接辅助層上)接觸基板 的方法並無制蚊’可_將聚合物直接制於基板上 的方法、或將使聚合物轉於溶射喊的喊物(聚合 F法寺。就容易控制 ,較佳為將組成物塗A well-known method, such as a roll coating method. 'Extrusion coating allows the above polymer to contact the substrate on the substrate (or close to the auxiliary layer) without mosquitoes. - The method of directly polymerizing the polymer onto the substrate, or transferring the polymer to the spray Shouts (aggregate F method temple. It is easy to control, preferably to coat the composition

幕式塗佈機、模塗佈機、 法、輟式涂佑、土垃A I 傳遞親塗佈機、擠屢式 、利用凹版輥的塗佈法 29 201228822 就處理性或製造效率的觀點而言,較佳為將聚合物層 形成用組成物塗佈於基板(或密接輔助層)上並加以乾燥, 而形成包含聚合物的組成物層的形態。 當使聚合物層形成用組成物與基板接觸時,其塗佈量 就與後述的銅離子的充分的相互作用形成性的觀點而言, 以固體成分換算計較佳為0.1 g/m2〜1〇 g/m2 ’特佳為〇 5 g/m2 〜5 g/m2 ° 再者,當於本步驟中形成聚合物層時,亦可在塗佈與 乾燥之間,於20。(:〜40°C下放置0.5小時〜2小時而去除 殘存的溶劑。 % (能量的賦予) , 作為本步驟中的對基板上的聚合物(包含聚合物的層) 賦予能量的方法,例如可使用加熱處理或曝光等放射線照 射處理。例如可進行利用紫外線(ultravi〇let,uv)燈、 可見光線等的光照射,利用加熱板等的加熱等。 ,為進行曝光時的総,例如有水銀燈、金屬齒化物 燈、氣燈、化學燈、碳弧料。作為放射線,有電子 X線^子束、遠紅外線等。另外,亦制g射線、i 射線二深紫外光、高密度能量光束(雷射光束)。 勒湯^進^熱時’例如可使用—般的加熱輥、積層機、 加執板、红外·;^ 送風乾燥機、烘箱、 加,,,、极、、工外線乾細機、加熱滾筒等。 作為能量賦予所需要的時間,根 合物的生嫩接= 201228822 jyys/pif 入'^者^藉由曝光來進行能量的賦予時,為了使接枝 聚合容易地進行,另外,為了抑制所生成 分解,其曝光功率較佳為1GnJ/em2〜_QnJ/em2 = 圍更佳為1〇〇 mJ7 cm2〜3000 mJ/ cm2的範圍。 另外,亦可於利用氮氣、氦氣、二酸化碳等情性氣體 進行置換,並將氧濃度抑制為6〇〇 ppm以下,較佳為 PPm以下_射進行關。 T Μ為· 所獲得的聚合物層的厚度並無特別限制,就含銅鍍膜 的對於基板的密接性的觀點而言,較佳為〇 〇1 μιη〜1〇 μιη ’ 更佳為 〇 〇5 μιη〜5 μιη。 另外’以乾燥膜厚計較佳為〇 〇5 g/m2〜20 g/m2,特佳 為 0.1 g/m2〜6 g/m2。 進而,聚合物層的表面粗糙度(Ra)就配線形狀及密 接強度的觀點而吕’較佳為〇.〇1 pm〜0.3 μιη,更佳為〇 〇2 μιη〜0.15 μιη。再者,表面粗糙度(Ra)是藉由非接觸式 干涉法’根據JIS B, 0601 ( 20010120修訂)中所記載的Ra, 並使用Surfcom 3000A (東京精密(股份)製造)來測定。 再者’聚合物層中的聚合物的含量相對於聚合物層總 量,較佳為2質量%〜100質量%,更佳為1〇質量%〜1〇〇 質量%的範圍。 另外,於聚合物層中亦可含有聚合起始劑。若含有聚 合起始劑,則藉由能量賦予而產生活性種(例如,自由基 活性種)’而進一步促進聚合性基間的反應、或聚合性基與 基板(或密接辅助層)的反應。作為其結果,可獲得密接 31 201228822 性高的含銅鍍膜。 聚合制’可使用熱聚合起始劑,光 她口 。月j (自由基小口起始劑、陰 離子聚合起始劑),或曰本專利特開平9二=: =::59Γ號中所記裁的側鍵上具有_基的 基及交聯性基的聚合物(聚合起始聚合物,等口。,月匕 作為光聚合起始劑的例子,可 乙酮類、胺基苯烧基酮類、安基聰、苯 類、苯偶醯、苯偶醯縮酮類、肟g旨類、、:貞二=蒽: 姆、雙醯基氧化膦類、酿基氧化膦二匕四: 氮化合物等及其衍生物。另外, ,人二職類、偶 始劑’亦可列舉陽離子聚合起始劑‘:、聚合起 劑的例子,可列舉:芳香族鏘鹽合起始 錡鹽等及其衍生物。 月表第Via知元素的 進而,於聚合物層中,亦可於無 圍内包含各種添加劑。 …、、x的效果的範 賦予另:德ίΪ行能量賦予時’亦可成圖案狀地進行P 成圖案狀的聚合物層。 里Up ’而形 <步驟(2):觸媒賦予步驟> 步驟⑴是使含有銅離子、且 =:⑴中所獲得的聚合;對=: _銅離子的步驟。於本步驟中,聚合物層心ϊ;= 32 201228822 ^yy» /pif 互作用的官能基對應於其魏,附著(吸附)鑛 中的銅離子。所__離子於後述騎敷步驟 中作為無電解ϋ銅的觸媒、或電解鍍銅的電極發揮作用。 首先,對本步驟中所使用的鍍敷觸媒液進行詳述,Α 後對步驟(2)的程序進行詳述。 ^ (鍍敷觸媒液) 本步驟中所使用的鍍敷觸媒液含有銅離子、且 示超過3.0。 對觸媒液供給銅離子的供給源並無特別限制,只要是 可對鍍敷㈣液巾供給娜子者(含銅化合物),則並無特 别限制其中,較佳為溶解於溶劑中而被解離成金屬離子 與驗(陰離子)的金屬鹽的形態。 更具體而言,可列舉:硝酸銅、硝酸雙(三苯基膦)銅 (I)、碳酸銅(II)、鹼性碳酸銅(11)、二氫氧化碳酸銅(11)、乙 ,銅、乙基乙醯乙酸銅(Π)、氯化銅⑴、氯化銅(11)、無水 氣化銅(II)、乳化叙銅(II)、硫酸銅、硫酸四氨銅(II)、氫氧 化銅(II)、硫酸銨銅(11)、酒石酸銅(11)、碘酸銅、碘化銅⑴、 亞鉻酸銅、檸檬酸銅(II)、曱酸銅(11)、磷酸銅(11)、2_乙基 己酸銅(II)、油酸銅(II)、草酸銅(11)、2,4_戊二酸銅(11)、葡 ,糖酸銅(II)、異丁酸銅(H)、葉綠素銅三鈉鹽、氰化銅(1)、 氰化銅酸鈉、氰化銅酸鉀、硫氰酸銅(1)、噻吩_2_羧酸銅(1)、 氮化銅⑴、硫化銅(I)氣[1,3-雙(2,6-二-異丙基苯基)咪唑_2_ 亞基]銅⑴環己烧丁酸銅(II)、乙醯丙g同酸銅(Η)、甲醇銅 (II)、乙醇銅(Π)、六氟乙醯丙酮酸銅(H)、異丙醇銅(η)、苯 33 201228822 基乙醯基銅⑴、溴化銅(II)、溴化銅(I)、溴化銅(ι)_二曱硫 錯合物、環戊二烯基(三乙基膦)銅⑴、六氟磷酸四(乙腈) 銅⑴、焦墙酸銅(II)、碲化銅(I)、砸化銅(II)、亞砸酸銅(II)、 在呂酸銅、%:烧酸銅(II)、新癸酸銅(Π)、氧化銅、四氧化二 鐵銅、鎢酸銅、雙(乙醯丙酮酸)銅(II)、雙(乙醯乙酸第三丁 酯)銅(II)、雙(6,6,7,7,8,8,8-七氟-2,2-二曱基-3,5-辛二酮酸) 銅(II)、矽化銅、氧化銅⑴、氧化銅(Π)、氧化鉍鋰鈣銅、 雙(2,2,6,6-四曱基-3,5-庚二g同酸)銅(Π)、雙(N,N’_二-第二丁 基脉基)二銅⑴、硼氫化雙(三苯基膦)銅⑴、三甲基膦(六氟 乙酿丙嗣酸)銅⑴、溴(1,10-啡啉)(三苯基膦)銅(I)、丙烯酸 銅(II)、甲基丙烯酸銅(II)、酞菁銅(11)、酞菁銅(11)四磺酸四 鈉鹽、苯亞磺酸銅(阳、氟化銅(π)、六氟_2,4_戊二酸銅(π)、 l’l’l·二氟-2,4-戊二酸鋼(π)、六氟-2,4-戊二酸銅(1)_環辛二 烯錯合物、四氟硼酸鋼、三氟曱磺酸銅(11)、三氟乙酸銅 (11)、二氟乙醯丙酮酸銅(11)、三氟甲磺酸銅⑴苯錯合物(2 : 1)、乙二胺_N,N,N,,NL四乙酸銅(11)二鈉鹽、以及該些 合物。 一 —其中,就溶液的溶解性優異,本發明的效果更優異的 而。較佳為乙酸銅、硝酸銅、硫酸銅,尤其乙酸銅 a文觸媒液中的銅離子的含量並無特別限制,但京 :的處理性的觀點而言’較佳為0.001莫耳/1叫莫耳 更佳為0·01莫耳/1〜0.5莫耳/卜 錢敷觸媒液的PH顯示超過3.0。若為上述範圍,貝Curtain coater, die coater, method, enamel type coating, soil AI transfer pro-coating machine, extrusion type, coating method using gravure roll 29 201228822 From the viewpoint of handling property or manufacturing efficiency Preferably, the polymer layer-forming composition is applied onto a substrate (or an adhesion assisting layer) and dried to form a composition layer containing a polymer. When the composition for forming a polymer layer is brought into contact with the substrate, the coating amount is preferably 0.1 g/m 2 to 1 Å in terms of solid content from the viewpoint of sufficient interaction between the copper ions to be described later. g/m2 'excellently 〇5 g/m2 〜5 g/m2 ° Further, when the polymer layer is formed in this step, it may be between coating and drying at 20. (: ~40° C. for 0.5 hr to 2 hours to remove residual solvent. % (Energy imparted), as a method of imparting energy to a polymer (layer containing a polymer) on a substrate in this step, for example Radiation irradiation treatment such as heat treatment or exposure can be used. For example, it can be irradiated with light such as an ultraviolet ray (UV) lamp or visible light, or heated by a heating plate or the like. Mercury lamp, metal toothed lamp, gas lamp, chemical lamp, carbon arc material. As radiation, there are electron X-ray beam, far infrared ray, etc. In addition, g-ray, i-ray two-deep ultraviolet light, high-density energy beam are also produced. (laser beam). Le Tang ^ into the heat when 'for example, can use the same heating roller, laminating machine, add plate, infrared · ^ air blow dryer, oven, plus,,, pole, and outside the line Drying machine, heating roller, etc. As the time required for energy supply, the rooting of the roots = 201228822 jyys / pif into the ^ ^ ^ when the energy is given by exposure, in order to facilitate the graft polymerization get on, Further, in order to suppress the decomposition generated, the exposure power is preferably in the range of 1 GnJ/em2 to _QnJ/em2 = more preferably in the range of 1 〇〇 mJ7 cm 2 to 3000 mJ/cm 2 , and it is also possible to use nitrogen gas, helium gas, The gas is replaced with an acid gas such as diacidified carbon, and the oxygen concentration is suppressed to 6 〇〇 ppm or less, preferably PPm or less _ shot is turned off. T Μ is · The thickness of the obtained polymer layer is not particularly limited, and From the viewpoint of the adhesion of the copper plating film to the substrate, it is preferably 〇〇1 μηη~1〇μηη ' more preferably 〇〇5 μηη to 5 μηη. Further, 'dry powder thickness is preferably 〇〇5 g/ M2 to 20 g/m2, particularly preferably 0.1 g/m2 to 6 g/m2. Further, the surface roughness (Ra) of the polymer layer is preferably from the viewpoint of wiring shape and adhesion strength. Pm~0.3 μιη, more preferably 〇〇2 μιη~0.15 μιη. Further, the surface roughness (Ra) is Ra by the non-contact interference method according to JIS B, 0601 (rev. 20010120), and It is measured using Surfcom 3000A (manufactured by Tokyo Precision Co., Ltd.) The content of the material is preferably from 2% by mass to 100% by mass based on the total amount of the polymer layer, more preferably from 1% by mass to 1% by mass. Further, the polymer layer may also contain polymerization. When a polymerization initiator is contained, an active species (for example, a radical active species) is generated by energy supply to further promote a reaction between polymerizable groups, or a polymerizable group and a substrate (or an adhesion auxiliary layer). As a result, a copper-containing plating film having a high adhesion of 31 201228822 can be obtained. The polymerization system can use a thermal polymerization initiator to light her mouth. Month j (radical small-mouth initiator, anionic polymerization initiator), or a group having a _ group and a crosslinkable group on the side bond recorded in the Japanese Patent Laid-Open No. 9===::59 Γ Polymer (polymerization starting polymer, iso-port., as an example of photopolymerization initiator, ketone, amino benzophenone, Anji Cong, benzene, benzoin, benzene Oxime ketones, 肟g genus, 贞 蒽 = 蒽: 姆, bis- fluorenylphosphine oxide, phosphine oxide ruthenium dichloride: nitrogen compounds and their derivatives. In addition, the second class, The initiator "may also be a cationic polymerization initiator": Examples of the polymerization initiator include an aromatic sulfonium salt starting sulfonium salt and the like, and derivatives thereof. In the layer of the material, various additives may be contained in the outer layer. The effect of the effect of the ... and x may be added to the polymer layer in which the pattern P is formed in a pattern. 'Formation <Step (2): Catalyst imparting step> Step (1) is a polymerization obtained by containing copper ions and =: (1); pair =: _ copper Substep. In this step, the polymer layer palpitations; = 32 201228822 ^yy» /pif The interaction of the functional groups corresponds to its Wei, attached (adsorbed) copper ions in the ore. In the application step, it acts as a catalyst for electroless copper bismuth or an electrode for electrolytic copper plating. First, the plating catalyst liquid used in this step will be described in detail, and then the procedure of the step (2) will be described in detail. ^ (plating catalyst liquid) The plating catalyst liquid used in this step contains copper ions and is more than 3.0. The supply of copper ions to the catalyst liquid is not particularly limited as long as it can be plated. (4) The liquid towel is supplied to the genus (copper-containing compound), and is not particularly limited, and is preferably a form of a metal salt which is dissolved in a solvent and dissociated into a metal ion and an anion (anion). More specifically, Listed: copper nitrate, bis(triphenylphosphine) copper (I), copper (II) carbonate, basic copper carbonate (11), copper (II) dihydrate, copper, copper, ethyl acetonitrile Copper (bismuth), copper chloride (1), copper chloride (11), anhydrous copper (II), emulsified copper (II), sulfuric acid , copper (II) sulfate, copper (II) hydroxide, copper (11) ammonium sulfate, copper tartrate (11), copper iodate, copper iodide (1), copper chromite, copper (II) citrate, Copper citrate (11), copper (11) phosphate, copper (II) 2-ethylhexanoate, copper (II) oleate, copper oxalate (11), copper 2,4-pentanedioate (11), Portuguese , copper (II) saccharate, copper (H) isobutylate, copper chlorophyll trisodium salt, copper cyanide (1), sodium copper cyanide, potassium cyanide, copper thiocyanate (1), thiophene _2_Carboxylic acid copper (1), copper nitride (1), copper sulfide (I) gas [1,3-bis(2,6-di-isopropylphenyl)imidazole_2_subunit] copper (1) cyclohexane Burning copper (II) butyrate, acetophenone g with acid copper (Η), methanol copper (II), copper ethoxide (Π), hexafluoroacetic acid copper (H), copper isopropoxide (η), Benzene 33 201228822 bis-ethyl copper (1), copper (II) bromide, copper (I) bromide, copper (I) bromide complex, cyclopentadienyl (triethylphosphine) copper (1), hexafluorophosphate tetrakis (acetonitrile) copper (1), copper (II) pyrophoric acid, copper (I), copper (II), copper (II), copper in copper, %: burning Copper (II) acid, copper neodymium bismuth (bismuth), copper oxide, copper oxynitride, copper tungstate, double (B) Pyruvic acid) copper (II), bis(acetic acid tributyl acrylate) copper (II), bis (6,6,7,7,8,8,8-heptafluoro-2,2-didecyl- 3,5-octanedione acid) copper (II), copper telluride, copper oxide (1), copper oxide (strontium), lithium strontium oxide calcium, bis (2,2,6,6-tetradecyl-3,5 - heptane di g with acid) copper (ruthenium), bis (N, N'-di-t-butyl fluorenyl) dicopper (1), borohydride bis(triphenylphosphine) copper (1), trimethylphosphine (six Fluorinated propionate) copper (1), bromine (1,10-morpholine) (triphenylphosphine) copper (I), copper (II) acrylate, copper (II) methacrylate, copper phthalocyanine (11) , copper phthalocyanine (11) tetrasodium tetrasulfonate, copper benzenesulfinate (positive, copper fluoride (π), hexafluoro-2,4_glutaric acid copper (π), l'l'l· Difluoro-2,4-glutaric acid steel (π), hexafluoro-2,4-pentanedioate (1)-cyclooctadiene complex, tetrafluoroboric acid steel, copper trifluoroantimonate 11), copper trifluoroacetate (11), copper difluoroacetate pyruvate (11), copper triflate (1) benzene complex (2: 1), ethylenediamine _N, N, N, NL copper (11) disodium salt of tetraacetate, and the same. One of them is excellent in the solubility of the solution, and the effect of the present invention is more excellent. The content of copper ions in copper acetate, copper nitrate, copper sulfate, and especially copper acetate a catalyst liquid is not particularly limited, but it is preferably 0.001 mol/1 from the viewpoint of handling properties of Beijing: It is better to say that Moer is 0. 01 Moer/1~0.5 Moer/Bu money. The PH of the solvent is more than 3.0. If it is the above range, Bay

34 201228822 jyy«/pif 離子對於聚合物層的附著充分地進行,於後述的鍍敷步驟 中可獲得具有足夠的厚度且密接性優異的含銅鍍膜。其 中,就鍍敷觸媒液的溶液穩定性、及所獲得的含銅鍍膜的 ㈣去除性更優異峨點而言,pH較㈣3,更佳 為3.2〜1〇 〇 f-方面’ t pH為3.0以下時,銅離子對於聚合物層 不:進行’後述的鍍敷步驟中的錄敷的析出 仏、^者二鐘敷觸媒液的ΡΗ亦可於添加上述鋼離子的供 、,、《源後,猎由酸(例如鹽酸、硫酸) " 等來適當·。 或驗(例如氫氧化鈉) 鍍敷觸媒液的溶劑並無特別 及作業性的觀點而言,較佳為使 ^^境適應性、 透(R_seQ_sis,R〇)水 ^具體而言,逆滲 水)。 *離子水、蒸餾水、精製 另外’視需要亦可併財機溶劑 如可使用:丙酮、乙醯乙酸甲 乍為有機溶劑,例 :乙酸醋、環己嗣、乙酿丙綱:苯^ 丙二醇二乙酸輯、三乙酸甘油能、 2仆%己婦基)、 噁烧、N-甲基吡咯啶酮、碳酸二甲=、Γ醇二乙酸醋、二 丙酮醇、γ-丁内酯、甲醇、乙 曰、一甲基溶纖劑、二 醇單甲驗、f基溶纖劑、乙基溶纖、正两醇、丙二 四虱呋喃、1,4-二噁烷、正甲義 一醇第三丁醚、 佳為水溶性的有機溶劑, 較佳;==等:其中’較 及酉夂一甲酷、二甲 35 201228822 D>y〇 /μη? 基溶纖劑、三乙二醇單曱醚 二乙醚。 二乙二醇二甲醚、二乙二醇 内,包觸舰亦可於無損本發明的絲的範圍 :=:ρ 列舉 Ag、A1、Ni、C。、Fe、Pd,可較佳 舉上述金i的1。另外’作為鍍敷觸媒前驅物,可較佳地列 牛上=的離子(_Ag離子、Pd離子 較佳Γΐο莫ϋ敷觸媒的含量相對於鋼離子刚莫耳份, 質上不含該1G財份町’特佳為實 (步驟(2)的程序) 特別:Ϊ步;:用鍍敷觸媒液的接觸方法並無 洛涂汰认取入用a知的方去。例如可列舉:將鍍敷觸媒 潰於鍵敷觸:層中=ί:或使具備聚合物層的基板浸 作為接觸時間,較佳為3〇秒〜24小時左右,更佳為i 分鐘〜1小時左右。 接觸時的鍍敷觸媒液的溫度較佳為5。〇〜8〇它左右, 更佳為15°c〜60t左右。 聚合物層中的銅離子的吸附量(附著量)根據所使用 的聚合物的種類、銅離子的濃度等而不同,但就鍍敷的析 出性的觀點而言,較佳為5 mg/m2〜1000 mg/m2,更佳為 10 mg/m 〜800 mg/m2’ 進而更佳為 20 mg/m2〜600 mg/m2。 若銅離子的吸附量過少,則後述的鍍敷的析出變得困 36 201228822 /pif 難’若含量過多,則存在與基板的密接力受損的情況。該 及附量(附著i)可藉由公知的測定手段(例如,質量分 析裝置(感應麵合電聚質譜儀(Inductively c〇叩ied34 201228822 The jyy«/pif ion adheres sufficiently to the polymer layer, and a copper-containing plating film having a sufficient thickness and excellent adhesion can be obtained in a plating step to be described later. Among them, the solution stability of the plating catalyst liquid and the (four) removal property of the obtained copper-containing plating film are more excellent, the pH is (4) 3, more preferably 3.2 to 1 〇〇 f-the aspect is pH When it is 3.0 or less, the copper ion is not used for the polymer layer: the precipitation of the coating in the plating step described later, the enthalpy of the two-time application of the contact medium, or the addition of the above-mentioned steel ions, After the source, hunting is appropriate by acid (such as hydrochloric acid, sulfuric acid) " Or, in particular, the solvent for plating the catalyst liquid is not particularly suitable for workability, and it is preferable to make the environment adaptable and transparent (R_seQ_sis, R〇) water. Water seepage). *Ionic water, distilled water, refining and other 'optional solvent can be used if necessary: acetone, acetamidineacetic acid for the organic solvent, such as: acetic acid vinegar, cyclohexanyl, ethyl acetylene: benzene ^ propylene glycol Acetate series, triacetin, 2 servants, oxacin, N-methylpyrrolidone, dimethyl carbonate, sterol diacetate, diacetone alcohol, γ-butyrolactone, methanol, Acetyl, monomethyl cellosolve, diol monomethyl test, f-based cellosolve, ethyl solubilized fiber, normal diol, propylene ditetrafuran, 1,4-dioxane, n-methyl alcohol Tributyl ether, preferably a water-soluble organic solvent, preferably; ==, etc., wherein 'Compared with 酉夂一甲酷, dimethyl 35 201228822 D>y〇/μη? based cellosolve, triethylene glycol single Ether ether diethyl ether. Within the diethylene glycol dimethyl ether or diethylene glycol, the inclusion of the ship may also be in the range of the wire of the present invention: =: ρ Lists Ag, A1, Ni, C. Preferably, Fe, Pd, or 1 of the above gold i. In addition, as a plating catalyst precursor, it is preferable to list the ions on the cattle (_Ag ions, Pd ions, preferably Γΐ ϋ ϋ ϋ ϋ 的 的 的 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对 ϋ ϋ ϋ ϋ ϋ ϋ ϋ ϋ ϋ ϋ 1G Fukushima-cho's work is very good (the procedure of step (2)) Special: Liaobu;: The contact method of the plating catalyst liquid is not used for the use of a known method. For example, : The plating catalyst is broken in the key contact: layer = ί: or the substrate with the polymer layer is immersed as the contact time, preferably about 3 sec to 24 hours, more preferably about 1 minute to about 1 hour. The temperature of the plating catalyst liquid at the time of contact is preferably 5. 〇~8 〇, about 15 ° c to 60 t or so. The amount of copper ions adsorbed in the polymer layer (adhesion amount) is used according to The type of the polymer, the concentration of the copper ion, and the like are different, but from the viewpoint of the precipitation property of the plating, it is preferably 5 mg/m 2 to 1000 mg/m 2 , more preferably 10 mg/m to 800 mg / M2' is more preferably 20 mg/m2 to 600 mg/m2. If the amount of copper ions adsorbed is too small, the precipitation of the plating described later becomes difficult 36 201228822 /pif , Where adhesion to the substrate, there is impaired. The amount and attaching (adhering i) can be measured by a known means (e.g., mass analysis device (sensing face electrically bonded poly mass spectrometer (Inductively c〇 knock ied

Plasma-Mass Spectromete,ICP-MS )))來測定。 <步驟(3):帛1驗性水溶液接觸步驟〉 輪^驟(3)是使在步驟⑺中被賦予了銅離子的聚合 溶的步驟。藉由進行本步驟,附著於 ^物層中_離子的穩定性提昇,於後述的鍍敷 其觸媒功能充分地發揮。 觀點而言,PH較佳為8〜14,pH更佳為優異的 液成為上述pH的;^適;制’較佳為《使鹼性水溶 法並==所的接觸方 處理時‘二次=為Plasma-Mass Spectromete, ICP-MS))). <Step (3): 帛1 aqueous solution contact step> The step (3) is a step of dissolving the polymerization in which copper ions are imparted in the step (7). By performing this step, the stability of the _ ions adhered to the material layer is improved, and the catalyst function of the plating described later is sufficiently exhibited. In view of the above, the pH is preferably from 8 to 14, and the pH is preferably an excellent liquid to be the above-mentioned pH; ^ is suitable; the method is preferably "the alkaline water-soluble method and the = contact treatment" = for

較佳為5°C 〜二範^ 37 201228822 jyyo / 另外,作為接觸時間,較佳為5秒〜120分鐘的範圍, 更佳為15秒〜60分鐘的範圍,進而更佳為30秒〜3〇分鐘 的範圍。 川刀鯉 <步驟(4):鍍敷步驟〉 一步驟(4)是對步驟(3)中所獲得的聚合物層至少進 打鏟銅,而獲得含銅鍍膜的步驟。更具體而f,如圖1的 本步射’於聚合物層14上形成含銅賴 優異的導電性、密接性。 _刀此且具有 步驟巾所進行的賴_類絲制限^,可列泉 無電解鑛銅、電鍍銅等。另外,為 』平 含銅链膜’可蝴擇織無 解鍍鋼等多種方法。 進仃電 明。以下’對可於本步财較佳地進行的織處理進行說 (無電解鍍銅) 所謂無電解錢鋼’是指使用溶解了銅 由化學反應而使金屬銅析出。 町岭夜,藉 作為無電騎鋼的方法,可實施公知的方法 較佳為將步驟(3)巾賴得的聚合_浸潰於 浴中來進行。 …、电解鍍鋼 作為所使用的無電解錄銅浴,可使 解鍍鋼浴。 "门知的無電 通常的無電解_浴的組成較佳為除溶劑 包含 201228822 jyys/pif 1.銅離子、2.還原劑、3.提昇銅離子的穩定性的添加劑(穩 定劑)。 ,作為錢浴令所使用的溶劑,主要可列舉水。另外,視 需要亦可使財機溶劑,難為可溶於水的有機溶劑。其 中作為水溶性的有機溶劑,可列舉:丙酮等酮類,甲醇、 乙醇、異丙醇等醇類。 作為銅離子源,可使用公知的含銅化合物,例如可列 舉添加至上述糊舉的鍍敷觸液巾的含銅化合物等。其 中,較佳為使用赌銅、氣灿、顧銅等,其含量以銅 離子計較佳為設為ai g/L〜5〇g/L左右。 作為還原劑,例如可列舉:硼氫化鈉、 類的硼系還原劑,甲醛,次亞磷酸等。 作為穩定化劑,例如可列舉:乙二胺四乙酸(孤知 Diamine Tetraacetic Acid,EDTA )。 趟=無電解鑛銅浴’例如可列舉含有Μ%作為銅 ϋΑ3 ^’含有作為銅料_定劑的 EDTA或羅謝耳鹽㈤ehdlesal 作為添加劑的鍍浴。 d 甲胺硼烷之 品,例如可列舉:上村工 、奥野製藥(股份)製造: 另外,鍍敷液亦可使用市售 業(股份)製造:Thru-Cup PGT ATS Add copper IW 等。 物====物層與無電解鍍銅浴哟 池為1 a〜m、時左右,更料卜Preferably, it is 5 ° C to 2 Fan ^ 37 201228822 jyyo / In addition, as the contact time, it is preferably in the range of 5 seconds to 120 minutes, more preferably in the range of 15 seconds to 60 minutes, and even more preferably 30 seconds to 3 seconds. The range of minutes.川刀鲤 <Step (4): Plating step> One step (4) is a step of obtaining a copper-containing plating film by at least shoveling the polymer layer obtained in the step (3). More specifically, f, as shown in Fig. 1, is formed on the polymer layer 14 to have excellent conductivity and adhesion. _ Knife and have the step towel to carry out the _ _ silk limit ^, can be listed in the spring without electroless copper, electroplated copper. In addition, the "flat copper-containing chain film" can be used to woven non-de-plated steel and other methods. Into the electricity. The following is a description of the weaving process which can be preferably carried out in this step (electroless copper plating). The term "electroless steel" refers to the precipitation of metallic copper by chemical reaction using dissolved copper. In the case of the town, the method can be carried out as a method of riding the steel without electricity, and it is preferred to carry out the method in which the polymerization of the step (3) is immersed in a bath. ..., electrolytic plating steel As the electroless copper bath used, the steel bath can be deplated. "There is no electricity. The usual electroless_bath composition is preferably a solvent containing 201228822 jyys/pif 1. copper ion, 2. reducing agent, 3. additive for improving the stability of copper ions (stabilizer). As a solvent used in the money bath order, water is mainly mentioned. In addition, it is also possible to make a solvent for the solvent as needed, and it is difficult to be an organic solvent which is soluble in water. Examples of the water-soluble organic solvent include ketones such as acetone, and alcohols such as methanol, ethanol, and isopropyl alcohol. As the copper ion source, a known copper-containing compound can be used, and for example, a copper-containing compound or the like which is added to the above-mentioned paste coated contact liquid towel can be used. Among them, it is preferable to use gambling copper, gas scent, and copper, etc., and the content thereof is preferably about aig / L 〜 5 〇 g / L in terms of copper ions. Examples of the reducing agent include sodium borohydride, a boron-based reducing agent, formaldehyde, hypophosphorous acid, and the like. Examples of the stabilizing agent include ethylenediaminetetraacetic acid (EDTA).趟 = electroless copper bath ' For example, a plating bath containing Μ% as a copper ruthenium 3 ^' containing EDTA or a Rochant salt (5) ehdlesal as a copper-based agent may be mentioned. For example, the product of the product may be produced by a manufacturer (shared company): Thru-Cup PGT ATS Add copper IW or the like. Matter ====layer and electroless copper bath 哟 Pool is 1 a~m, around, more

右。鑛浴的溫度並無特難制,但較佳為5t〜8〇H 39 201228822 / pii 的範圍,更佳為15°C〜60°C左右的範圍。 所形成的利用無電解鍍銅的鍍銅膜的膜厚可藉由鍍浴 的銅離子濃度、於鍍浴中的浸潰時間、或鍍浴的溫度等來 適當控制。當於以下的步驟中進行鍍敷時,只要顯現導電 性即可,較佳為0.1 μιη〜3 μηι。 以上述方式所獲得的利用無電解鍍銅的鍍銅膜藉由利 用掃描型電子顯微鏡(Scanning Electron Microscope,SEM) 的剖面觀察,而確認包含銅的微粒子高密度地分散於聚合 物層中,另外’銅進一步析出至聚合物層上。 聚合物層與鍍銅膜的界面是樹脂複合體與微粒子的混 合狀態,因此即便聚合物層與鍍銅膜的界面平滑(例如, 於1 mm的區域中Ra為1.5 以下),密接性亦變得良好。 (電解鍍銅) 於本步驟中,亦可進行電解鍍銅。 另外,亦可於上述無電解鍵銅後,將所形成 作為電,(供電朴進而進行電解鑛銅。藉此,能夠= 基板的挽紐優異的無電解鍍_絲礎,㈣上^ 形成新的具有任意厚度的鍍鋼膜。 /、谷易地 作為電解鍍銅的方法,可使用先前公 所使用的鏟浴亦可使用公知的鍍浴。 财法另外, =外,藉由電解鑛鋼而獲得又的鍍銅臈的 而不同,可藉由調整鍍洛中所 =據用途 流密度等來加以控制。 讎子的遭度、或電 再者,用於通常的電氣配線等時的膜厚就導電性的觀 201228822 /pif 點而言 季乂佳為0.5 _〜5〇 μιη,更佳為3聊〜%哗。 的',,、電解鍍敷、或電解鍍敷。 於本步驟中所獲得的含銅鏟膜中 ==r’包含銅以外的其他金屬(:如= 祕刻特性優異的觀點而言,較 5 八,貝貝上不含銅以外的金屬更佳。 <步驟(5):圖案形成步驟〉 =驟⑴是將上述錄步财所獲得的含舰酿刻 成圖案狀’而形成_狀含銅鍍膜的步驟。更具體而言, =圖1的(D)所示’於本步财,藉由去除含峨膜16 ^不需要的部分’而於聚合物層14上形成圖餘的含銅鑛 膜18。藉由本步驟,利祕刻將形成於整個基板表面的含 銅鍍膜的不需要的部分去除,藉此可生成所期望的圖案狀 的含銅餹膜。 於形成該圖案時,可使用任何方法,具體而言,可使 用眾所周知的減成法(於含銅鍍膜上設置圖案狀的遮罩, 對未形成遮罩的區域進行㈣處理後,將鮮去除而形成 圖案狀的含靖賴方法)、半加雜(於含銅鍍膜上設置 圖案狀的料,以於未軸鮮的區域巾形成含銅錄膜的 方式進行鍍敷處理,然後將遮罩去除並進行蝕刻處理,而 形成圖案狀的含銅鍍膜的方法)。 201228822 所謂減成法,具體是指如下的方法:於所形成的含銅 额上設置抗蚀劑層’藉由圖案曝光、顯影而形成與含銅 電鏡膜的圖案部相同的圖案,然後將抗姓劑圖案作為 並利用⑽液絲仙賴,從㈣錄的含銅錢膜。 作為抗姓劑,可使用任何材料,可使用負型、正型、 液狀、膜狀的抗蝕劑。另外,作為侧方法,可 製造時所使用的任何方法’可使用濕絲刻、乾 =财’只要任意地選擇即可。於作業的操作方面,渴 式触刻就裝置等的簡便性的觀點而讀1作為蚀刻液,、、 例如可使用氣化銅、氣化鐵等的水溶液。 更具體而言,圖2的(A)〜(D)袅干蚀田、 飯刻步驟_態。 )表不使用減成法的 ,先’藉由進行上述步驟⑷的織步驟,而準備圖 助:7 :人示㈣基板1〇、絕緣性樹脂層22、密接辅 於圖2的⑷中,在基板Η)的表面上及其 配線20。絕緣性樹脂層22、密:’ 面Γ板1G的—面上設置有含銅麵16,但村設置於兩 案狀=罩=2的⑻所示’—上設置圖 式姓刻1的(c)所不’利用飾刻處理(例如乾 …、M)將未設置有遮罩的區域的含銅鑛膜16right. The temperature of the mineral bath is not particularly difficult, but is preferably in the range of 5t to 8〇H 39 201228822 / pii, more preferably in the range of 15 ° C to 60 ° C. The film thickness of the formed copper plating film by electroless copper plating can be appropriately controlled by the copper ion concentration of the plating bath, the dipping time in the plating bath, or the temperature of the plating bath. When plating is performed in the following steps, conductivity may be exhibited, and it is preferably 0.1 μm to 3 μm. The copper plating film using electroless copper plating obtained in the above manner was observed by a scanning electron microscope (SEM) cross-section observation, and it was confirmed that fine particles containing copper were densely dispersed in the polymer layer, and 'Copper is further precipitated onto the polymer layer. The interface between the polymer layer and the copper plating film is a state in which the resin composite and the fine particles are mixed. Therefore, even if the interface between the polymer layer and the copper plating film is smooth (for example, Ra is 1.5 or less in a region of 1 mm), the adhesion is also changed. Good. (Electroplating Copper) In this step, electrolytic copper plating can also be performed. In addition, after the above-mentioned electroless copper is not formed, it can be formed as electricity, and (the power supply can be further carried out to carry out electrolytic copper ore. Therefore, it is possible to make an electroless plating which is excellent in the bonding of the substrate, and to form a new one. A steel-plated film having an arbitrary thickness. /, as a method of electrolytic copper plating, a known plating bath can be used as previously used in the shoveling bath, and the chemical plating method is additionally used. When the copper-plated copper-plated copper is obtained, it can be controlled by adjusting the flow density according to the use in the plating, etc. The degree of the twist, or the electric power, is used for the normal electric wiring. The conductivity view 201228822 /pif point is preferably 0.5 _~5〇μιη, more preferably 3 chat~%哗. ',,, electrolytic plating, or electrolytic plating. Obtained in this step In the copper-containing shovel film ==r' contains other metals than copper (:================================================================================= ): pattern forming step 〉 = (1) is to engrave the ship containing the ship obtained in the above-mentioned record step into a pattern' The step of forming a copper-containing plating film is formed. More specifically, = (in the step (D) of FIG. 1 is formed on the polymer layer 14 by removing the unnecessary portion of the ruthenium-containing film 16 ^. The remaining copper-bearing ore film 18. By this step, the unnecessary portion of the copper-containing plating film formed on the entire substrate surface is removed, thereby forming a desired copper-containing ruthenium film in a desired pattern. In the case of the pattern, any method can be used. Specifically, a well-known subtractive method can be used (a pattern-like mask is provided on the copper-containing plating film, and the region where the mask is not formed is subjected to (four) treatment, and then freshly removed to form a pattern-like method comprising a semi-additive method (a pattern-like material is provided on the copper-containing plating film, and plating is performed in such a manner that a non-axisy area towel forms a copper-containing recording film, and then the mask is removed and The method of performing the etching treatment to form a pattern-containing copper-containing plating film.] 201228822 The subtractive method specifically refers to a method of providing a resist layer on the formed copper-containing amount by pattern exposure and development. Forming a pattern with a copper-containing electron microscope film The same pattern, then the anti-surname pattern is used and used (10) liquid silk fairy, from the (four) recorded copper-containing money film. As an anti-surname agent, any material can be used, can be used negative, positive, liquid, film In addition, as a side method, any method that can be used at the time of manufacture can be arbitrarily selected by using wet wire engraving, dry=finance. In terms of operation of the operation, thirst-type engraving means, etc. From the viewpoint of simplicity, I can read 1 as an etching solution, and for example, an aqueous solution of vaporized copper or vaporized iron can be used. More specifically, (A) to (D) of FIG. 2 are dry-etched, rice, and rice. Step _ state.) The table does not use the subtractive method, first 'by performing the weaving step of the above step (4), and preparing the map: 7: the person shows (4) the substrate 1 〇, the insulating resin layer 22, and the adhesion is assisted by FIG. 2 In (4), on the surface of the substrate 及其) and its wiring 20. Insulating resin layer 22, dense: 'The surface of the face plate 1G is provided with the copper-containing surface 16, but the village is placed in the case of two cases = the number of the cover = 2 (8) is set on the top of the pattern (1) c) a copper-bearing ore film 16 that is not provided with a masked area by a finishing process (eg, dry..., M)

42 201228822 jyy« /pif 將遮罩24去 去除,而獲得圖案狀的含銅鍍膜18。最後 除’而獲得本發明的積層體。 力二成:!2體是指如下的方法:於所形成的含 賴圖案部相同的圖案,然後將抗蝴圖 電解鍵銅,將抗_圖案去除後實施快賴刻 錢膜去除成圖案狀’藉此形成圖案狀的含鋼鍍膜^ 抗钮劑、钮刻液等可使用與減成法相同的又材 電解鍍敷方法可使用上述記載的方法。 更具體而言’圖3的(Α)〜(Ε)表示使用本 的蝕刻步驟的形態。 吏用+加成法 首先,準備圖·3的(Α)所示的具有基板1()、金 線20、絕緣性樹脂層22、密接辅助層12、聚合物声μ、 以及含銅鍍膜16的積層體。 曰 案二罩:4圖3的⑻所示’—上設置圖 繼而,如圖3的(C)所示,進行電解鑛敷, 置有遮罩24的區域形成鑛膜,而獲得含鋼鑛膜心 其後,如圖3的⑼所示’將遮罩去除,進行敍刻 處理(例如乾式彳、濕式_),而獲得如圖3的 所π般具備圖案狀的含銅鍍膜18的積層體。 再者,亦可於去除含銅鍍膜的同時,藉由公知的手段 (例如乾式蝕刻)等將聚合物層一併去除。 進而’當藉由半加成法來實施钱刻步驟時,如圖々的 43 201228822 〜⑻所示’亦可為了獲得多層配線基板而實施讀 如圖4的⑷所示,首先,準備具備基板1()、 配線20、絕緣性樹脂層22、密接輔助層12、聚合物屬 以及含銅鍍膜16的積層體。 Α 〇 θ 4、 其次,如圖4的⑻所示,藉由雷射加工或鑽 工,而以貫穿含銅賴16、聚合物層14、密接輔助層Ο 絕緣性樹脂層22並到達金屬配線2〇的方+ 、 需要,其後進行除膠渣處理。时#成通孔。親 =而’如圖4 # (C)所示’野所形成的通孔壁 予鍍敷觸媒ϋ進行無轉缝及 崎 與金屬配線20接觸的金屬膜26。Μ解鍍敷’而後得 =而’如圖4的(D)所示,於金屬膜%上設置 ^^的遮罩24,_進行電解鍍敷 又 (參照圖4的(E))。 β 其後’將遮罩24去除後(參照圖*的(F)),進行 j處理(例如乾式_、濕式侧),而獲得圖案狀的金^ 、々30 (參照圖4的⑹)。其後,視需要亦可藉由電後 理等將聚合物層14及密接輔助層12去除。 7 乂 <任意的步驟(其1):還原步驟> 上、,十、2, 1驗性水溶液接觸步驟(步驟⑴)後且於 了二工4 (步驟⑷)前’視需要亦可實施使被靖予 物層與還原液接觸的還原步驟。藉由實施 本v驟,雜步驟中的含銅㈣的析出性提昇,可獲得所 44 201228822 ^yys/pif 期望的含銅鑛膜,並且姓刻特性等亦進一步提昇。 本步驟中所使用的還原液只要是可還原賦予至聚合物 中的銅離子的溶液,則其組成並無特別限制。通常,還原 液中含有還原劑。 作為還原劑,可使用各種公知的還原劑。其中,就對 於水溶㈣轉㈣觀點而言,作㈣·,較佳為具有 還原作用的水溶性化合物。 作為還原劑’例如可列舉:氫、一氧化碳、肼、胺硼 烷類(二甲胺硼烷(Dimethylamine Borane,DMAB)、三 曱胺硼烷(Trimethylamine Borane,TMAB)等)、亞硫酸 ,、羅謝耳鹽、硼化合物、有機硼化合物、硼氫化合物(硼 氫化鉀、硼氫化鈉等)、亞磷酸鹽、次亞磷酸鹽(次亞磷酸 鈉次亞磷酸鉀等)、醛類(甲醛等)、膦酸鹽(肼、膦酸 鈉專)、對苯二酚、糖類及有機酸類等。並不限定於上述還 原劑,較佳為胺硼烷類或醛類,其中,較佳為二甲胺硼烷 (DMAB )或甲醛。 還原劑可單獨使用一種、或將兩種以上混合使用。42 201228822 jyy« /pif The mask 24 is removed to obtain a patterned copper-containing coating 18 . Finally, the laminate of the present invention is obtained except for '. Force two into: !2 body refers to the following method: in the same pattern of the formed embossed pattern, and then the anti-butter pattern electrolysis key copper, the anti-pattern is removed, and the fast etched film is removed into a pattern. The method described above can be used by forming a pattern-containing steel-plated coating, a button-proofing agent, a buttoning solution, or the like, which can be used in the same manner as the subtractive method. More specifically, '(Α)~(Ε) of Fig. 3 shows a form in which the etching step of this embodiment is used. + + Addition Method First, the substrate 1 (), the gold wire 20, the insulating resin layer 22, the adhesion assisting layer 12, the polymer acoustic μ, and the copper-containing plating film 16 as shown in FIG. The layered body.曰 二 : : 4 : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : Then, as shown in (9) of FIG. 3, the mask is removed, and a etch process (for example, dry 湿, wet _) is performed to obtain a copper-containing plating film 18 having a pattern as shown in FIG. Laminated body. Further, the polymer layer may be removed together by a known means (e.g., dry etching) while removing the copper-containing plating film. Further, when the credit engraving step is carried out by the semi-additive method, as shown in FIG. 43 201228822 to (8), it is also possible to perform reading as shown in FIG. 4 (4) in order to obtain a multilayer wiring board. First, it is prepared to have a substrate. 1(), the wiring 20, the insulating resin layer 22, the adhesion assisting layer 12, the polymer genus, and the laminate of the copper-containing plating film 16. Α 〇 θ 4, next, as shown in (8) of FIG. 4, through the laser processing or drilling, the copper-containing lining 16, the polymer layer 14, the adhesion auxiliary layer 绝缘 the insulating resin layer 22, and the metal wiring are reached. 2 〇 square +, need, and then remove the slag treatment. When #成通孔. As shown in Fig. 4 (C), the through-hole wall formed by the field is pre-plated with a metal film 26 which is not twisted and is in contact with the metal wiring 20. After the plating is performed, the coating is performed, and as shown in Fig. 4(D), the mask 24 is placed on the metal film %, and electrolytic plating is performed (see (E) of Fig. 4). After the mask 24 is removed (refer to (F) of FIG. *), j processing (for example, dry type, wet side) is performed to obtain a pattern of gold and 々 30 (refer to (6) of FIG. 4). . Thereafter, the polymer layer 14 and the adhesion assisting layer 12 may be removed by electrical processing or the like as needed. 7 乂<arbitrary step (1): reduction step> upper, ten, 2, 1 aqueous solution contact step (step (1)) and before the second work 4 (step (4)) 'optional A reduction step of contacting the Jingyu layer with the reducing solution is carried out. By carrying out this step, the precipitation of copper-containing (tetra) in the hybrid step is improved, and the copper-containing ore film desired by the 2012 201228822 ^yys/pif can be obtained, and the surname characteristics and the like are further improved. The reducing liquid used in this step is not particularly limited as long as it is a solution capable of reducing copper ions imparted to the polymer. Usually, the reducing solution contains a reducing agent. As the reducing agent, various known reducing agents can be used. Among them, as far as the water-soluble (four)-transfer (four) viewpoint is concerned, it is preferably a water-soluble compound having a reducing action. Examples of the reducing agent include hydrogen, carbon monoxide, hydrazine, and amine borane (Dimethylamine Borane (DMAB), Trimethylamine Borane (TMAB), etc.), sulfurous acid, and Luo. Xerium salt, boron compound, organic boron compound, boron hydrogen compound (potassium borohydride, sodium borohydride, etc.), phosphite, hypophosphite (sodium hypophosphite, potassium hypophosphite, etc.), aldehyde (formaldehyde, etc.) ), phosphonates (肼, sodium phosphinate), hydroquinone, sugars and organic acids. It is not limited to the above-mentioned reducing agent, and is preferably an amine borane or an aldehyde. Among them, dimethylamine borane (DMAB) or formaldehyde is preferred. The reducing agent may be used singly or in combination of two or more.

還原液中的還原劑的濃度較佳為以過剩量與聚合物層 中的銅離子量接觸,較佳為設為〇 〇〇1 m〇1/L〜〇 5 m〇1/L 左右,更佳為設為0.01 mol/L〜0.2mol/L左右。 還原液亦可含有溶劑,例如可列舉:水、或1_曱氧基 -2-丙醇等醇類、或二乙二醇二乙鱗等二醇類等。 還原液的pH並無特別限制,只要對應於所使用的還 原劑的種類,適當設定成還原性能良好且還原劑的穩定性 45 201228822 /pil 不文阻礙的範圍即可。通常,較佳為將pH設為3程度以 上。 使還原液與聚合物層接觸方法並無特別限定,可列 舉.將還原液塗佈於聚合物層上的方法、或使具備聚合物 層的基板浸潰於還原液中的方法等。 接觸時間並無特別限定,就生產性的觀點而言,較佳 為5秒〜120分鐘,更佳為30秒〜30分鐘。 另外,接觸時的還原液的溫度並無特別限定,就易於 進行逛原反應的觀點而言,較佳為5°c〜8〇°C ,更佳為15°C 〜60〇C。 <任思的步驟(其2 ):第2驗性水溶液接觸步驟> 較佳為於上述還原步驟後且於上述鑛敷步驟前,設置 使實施了還原處理的聚合物層與鹼性水溶液接觸的第2鹼 性水溶液接觸步驟。藉由實施本步驟,可將還原步驟中所 產生的雜質自聚合物層中去除,並且後述的鍍敷步驟中的 鑛敷析出更有效率地進行,姓刻特性等亦進一步提昇。 所使用的鹼性水溶液與上述第丨鹼性水溶液接觸步驟 中所使用的鹼性水溶液相同。 再者,本步驟中所使用的驗性水溶液中亦可含有還原 劑,尤其,亦可含有鍍敷步驟中所使用的還原劑。藉由含 有還原劑,鍵敷步驟中的鍍敷析出性更有效地進行,敍^ 特性等亦進一步提昇。 ^ 所含有的還原劑可列舉上述還原步驟中所使用的還原 劑等。The concentration of the reducing agent in the reducing solution is preferably such that the excess amount is in contact with the amount of copper ions in the polymer layer, and is preferably set to about 〇1 m〇1/L to 〇5 m〇1/L. It is preferably set to about 0.01 mol/L to 0.2 mol/L. The reducing solution may contain a solvent, and examples thereof include water, an alcohol such as 1-methoxy-2-propanol, and a glycol such as diethylene glycol dichloride. The pH of the reducing solution is not particularly limited, and may be appropriately set to a range in which the reducing performance is good and the stability of the reducing agent is not appropriate depending on the type of the reducing agent to be used. Usually, it is preferred to set the pH to 3 or more. The method of bringing the reducing solution into contact with the polymer layer is not particularly limited, and a method of applying the reducing solution to the polymer layer or a method of immersing the substrate having the polymer layer in the reducing solution may be mentioned. The contact time is not particularly limited, and from the viewpoint of productivity, it is preferably from 5 seconds to 120 minutes, more preferably from 30 seconds to 30 minutes. Further, the temperature of the reducing liquid at the time of contact is not particularly limited, and from the viewpoint of facilitating the original reaction, it is preferably 5 ° C to 8 ° C, more preferably 15 ° C to 60 ° C. <Steps of Rensi (Part 2): Second aqueous solution contact step> Preferably, after the above-described reduction step and before the above-described mineralization step, a polymer layer and an alkaline aqueous solution subjected to the reduction treatment are provided. The second alkaline aqueous solution in contact is contacted. By carrying out this step, the impurities generated in the reduction step can be removed from the polymer layer, and the precipitation of the mineral deposit in the plating step described later can be carried out more efficiently, and the surname characteristics and the like are further improved. The alkaline aqueous solution used is the same as the alkaline aqueous solution used in the step of contacting the above-mentioned second alkaline aqueous solution. Further, the aqueous solution to be used in this step may contain a reducing agent, and in particular, may also contain a reducing agent used in the plating step. By containing a reducing agent, the plating deposition property in the bonding step is more effectively performed, and the characteristics and the like are further improved. ^ The reducing agent to be contained may, for example, be a reducing agent or the like used in the above reduction step.

46 201228822 3yys7pif 另外’所含有的還原劑的較佳量與上述還原步 使用的還原液中的還原劑的範圍相同。 另外,本步驟中的聚合物層與驗性水溶液的接觸方法 及接觸條件等能夠以與上述第i驗性水溶液接 的方法及條件來實施。 I驟相门 <積層體> 藉由實施上述步驟,可獲得依次具備基板、聚合物声、 以及圖案狀含銅鍍膜的積層體。 曰 本發明的積層體較佳為於表面粗糙度反2為5 nm〜 nm (更佳為刚nm以下)的基板上設置有含銅鑛膜的積 層體。另外,基板與含銅賴的密接性較佳為於方格試驗 中,在100格中為10格以下,特佳為〇格。即本發明的 積層體的特徵在於:基板表面平滑,並且基板與含銅鍍膜 的密接性優異。 ' 所獲得的積層體可用於各種領域,例如可用於電氣. ^子.通訊、農林水產、礦業、建設、食品、纖維、衣類、 醫療、煤、石'油、橡膠、皮革、汽車、精密機器、木材、 建材、土木、傢具、印刷、樂器等廣泛的產業領域。 更具體而言,可用於列印機、個人電腦、文字處理機、 鍵盤、個人數位助理(pers〇nal Digitai Assistant,PDA)、 電話機 '影印機、傳真機、電子收銀機(Electronic Cash Register ’ ECR)、計算器、電子記事薄、卡片、固定器、 文荨事務機器、辦公室自動化(〇ffice Automation,OA) 機器’洗衣機、冰箱、吸塵器、微波爐、照明器具、遊戲 47 201228822 機、®斗、被爐等家電機器,電視機(Televisi〇n,τν)、 錄影機(Video Tape Recorder,VTR)、攝像機、卡式收錄 音機、磁帶記錄器、迷你磁碟、光碟(c〇mpactDisk,CD) 播放器、揚聲n、液晶顯示轉視聽(AudiQVisud, AV) 機器’連接器、繼電器、電容器、開關、印刷基板、繞線 菅、半導體密封材料、發光二極體(LightEmittingDi〇de、 LED)密封材料、電線、電纜、變壓器、偏向輕、分電盤、 半導體晶片、各種電氣配線板、軟性印刷電路板(Flexible Printed Circuit ’ FPC )、薄膜覆晶(Chip 〇n Film , c〇F )、 捲帶自動接合(Tape Automated Bonding,TAB)、2 層覆銅 積層板(Copper Clad Laminate,CCL)材料、電氣配線用 ,料、多層配線基板、母板、天線、電磁波防止膜、時鐘 等電氣.電子零件、以及通訊機器等用途。 尤其,由於含銅鍍膜與聚合物層的界面的平滑性得到 改良,因此可應用於例如裝飾品(眼鏡框、汽車裝飾品、 珠^、遊戲框體、西餐餐具、自來水管配件、照明器具等) 或必需確保高周傳送的用途等各種用途。 [實例] 、以下,藉由實例對本發明進行更詳細的說明,但本發 明並不限定於該些實例。 x 述 以下,對本實例中所使用的聚合物的合成方法進行詳 (合成例1 :聚合物A) 向2 L的三口燒瓶中添加乙酸乙酯1 [、2-胺基乙醇 48 201228822 159 g ’並利用冰浴進行冷卻。以使内溫成為2〇。〇以下的 方式進行調節並向其中滴加溴化2-溴異丁酸15〇 g。其後, 使内;ΰπι·上幵至至溫(25 C )為止並反應2小時。反應結束 後,追加蒸顧水300 mL並使反應停止。其後,利用蒸餾 水300 mL對乙酸乙酯層進行4次清洗後,利用硫酸鎂進 行乾知’進而顧去乙酸乙醋’藉此獲得原料AgOg。 其次,向500mL的三口燒瓶中添加原料A47.4g、吡 啶22 g、乙酸乙酯150 mL並利用冰浴進行冷卻。以使内 溫成為20°C以下的方式進行調節並向其中滴加丙烯醯氯 25 g。其後’上昇至室溫並反應3小時。反應結束後,追 加洛德水300 mL並使反應停止。其後,利用蒸德水 對乙酸乙酯層進行4次清洗後,利用硫酸鎮進行乾燥,進 而顧去乙酸乙S旨。其後’錯由管柱層析法來精製以下的單 體Μ而獲得20 g的Μ。 [化9]46 201228822 3yys7pif Further, the preferred amount of the reducing agent contained is the same as the range of the reducing agent in the reducing solution used in the above reduction step. Further, the method of contacting the polymer layer and the aqueous test solution in this step, the contact conditions, and the like can be carried out by the method and conditions of the above-described first aqueous solution. I. Phase Step Gate <Laminated Body> By carrying out the above steps, a laminate having a substrate, a polymer sound, and a patterned copper-containing plating film in this order can be obtained.积 The layered body of the present invention is preferably provided with a layered body containing a copper-containing ore film on a substrate having a surface roughness of 2 nm of 5 nm to nm (more preferably just nm or less). Further, the adhesion between the substrate and the copper-containing yam is preferably in the square test, and is 10 or less in 100 cells, and particularly preferably. That is, the laminated body of the present invention is characterized in that the surface of the substrate is smooth and the substrate and the copper-containing plating film are excellent in adhesion. 'The obtained laminate can be used in various fields, for example, for electrical. ^Sub.communication, agriculture, forestry and fisheries, mining, construction, food, fiber, clothing, medical, coal, stone' oil, rubber, leather, automobile, precision machine , a wide range of industrial fields such as wood, building materials, civil engineering, furniture, printing, and musical instruments. More specifically, it can be used in printers, personal computers, word processors, keyboards, personal digital assistants (PDAs), telephones, photocopiers, fax machines, electronic cash registers (ECC). ), calculator, electronic organizer, card, holder, hacking machine, office automation (〇ffice Automation, OA) machine 'washing machine, refrigerator, vacuum cleaner, microwave oven, lighting, game 47 201228822 machine, hopper, quilt Household appliances such as furnaces, televisions (Televisi〇n, τν), video tape recorders (VTRs), camcorders, cassette recorders, tape recorders, mini-discs, compact discs (c〇mpactDisk, CD) players , Yangsheng n, liquid crystal display audio-visual (AudiQVisud, AV) machine 'connector, relay, capacitor, switch, printed circuit board, winding 菅, semiconductor sealing material, LED (LightEmittingDi〇de, LED) sealing material, Wires, cables, transformers, biased light, distribution boards, semiconductor wafers, various electrical distribution boards, flexible printed circuit boards Flexible Printed Circuit 'FPC), Chip 〇n Film (c〇F), Tape Automated Bonding (TAB), Copper Clad Laminate (CCL), Electrical Wiring Uses such as materials, multilayer wiring boards, motherboards, antennas, electromagnetic wave prevention films, clocks, etc., electrical and electronic parts, and communication equipment. In particular, since the smoothness of the interface between the copper-containing plating film and the polymer layer is improved, it can be applied to, for example, decorations (eyeglass frames, car decorations, beads, game frames, western tableware, water pipe fittings, lighting fixtures, etc.) ) It is necessary to ensure various uses such as the use of high-cycle transmission. [Examples] Hereinafter, the present invention will be described in more detail by way of examples, but the present invention is not limited to the examples. x The following is a detailed description of the synthesis method of the polymer used in the present example (Synthesis Example 1: Polymer A) To a 2 L three-necked flask, ethyl acetate 1 [, 2-aminoethanol 48 201228822 159 g ' was added. And use an ice bath for cooling. So that the internal temperature becomes 2〇. Adjust in the following manner and add 15 〇 g of 2-bromoisobutyric bromide to it. Thereafter, the inner; ΰπι· was topped up to the temperature (25 C) and reacted for 2 hours. After the completion of the reaction, 300 mL of water was added to the reaction and the reaction was stopped. Thereafter, the ethyl acetate layer was washed four times with 300 mL of distilled water, and then dried under magnesium sulfate, and then the ethyl acetate was taken into consideration to obtain the raw material AgOg. Next, a raw material A 47.4 g, pyridine 12 g, and ethyl acetate 150 mL were placed in a 500 mL three-necked flask, and the mixture was cooled in an ice bath. The internal temperature was adjusted to 20 ° C or less, and 25 g of acrylonitrile chloride was added dropwise thereto. Thereafter, it was raised to room temperature and reacted for 3 hours. After the reaction was completed, 300 mL of Rhodes water was chased and the reaction was stopped. Thereafter, the ethyl acetate layer was washed four times with steamed water, and then dried by sulfuric acid, thereby taking care of acetic acid. Thereafter, the following monoterpenes were purified by column chromatography to obtain 20 g of hydrazine. [Chemistry 9]

向500 mL的三口燒瓶中添加Ν,Ν-二甲基乙醯胺8 g, 並於氮氣氣流下加熱至65°C為止°歷時4小時向其中滴加 單體Μ : 14.3 g、丙烯腈(束京化成工業(股份)製造) 3.0g、丙烯酸(東京化成製造)6.5§、V-65 (和光純藥製 造)0.4 g的N,N-二曱基乙醯胺8 g溶液。 49 201228822 /pif 滴加結束後,進而將反應溶液攪拌3小時。其 加N,队二甲基乙醯胺41 g,並將反應溶液冷卻== 止。向上述反應溶液中添加4_羥基TEMp〇 恤為 ti_g、圆54.8g,並於室溫下進㈣小製 其後,向反應液中添加70質量%甲磺酸水溶液54〜 結束後,於水中進行再沈殿,然後取出固形物 ^應 物Α(重量平均分子量為3 4幻(Mw/Mn=i s于聚合 用電位差自動滴定裝置(京都電子工業(股份)製^使 作為滴定賴G.l Μ &amp;氧仙水溶絲測定所=取及 物A的酸值,結果該聚合物a的酸值為3 9 '。♦ &amp; 使用紅外線(lnfrared ’ IR)測定機(堀場製: 份)製造)來進行所獲得的聚合物A的鑑定。(股 合物溶解於_中並使用KBr結晶來進行。ir =吏聚 果’於2240 cm·1附近觀測到波峰且可知作 ;;=的結 腈已被導人至聚合物中。另外,藉由酸值測^而$知3 入了丙稀酸作為紐單元。另外,使聚合物溶解於氛化二 fA^(DimethylSUlfoxide,DMSO)tq_JBruk7r 製造的300 MHz的NMR( AV-3〇0 )進行測定。於2 5 〇 7 (5H分)内觀察到相當於含腈基單元的寬廣波峰,於 7.8-8.1 ppm 5.8-5.6 ppm(lH^).5;4.52 ppm (m 分)、4.2_3.9 ppm ( 2H 分)、3·3_3 5 ppm ( 2h 分)、 2.5-〇·7ρΡΙη(6Η分)内觀察到相當於含聚合性基單元的寬 廣波峰’於2.5-0.7 ppm (3Η分)峨察到相當於含魏 單凡的寬廣波峰,且可知含聚合性基單元:含腈基單元: 201228822 jyy» /pif 減二Γ0:30:40 —%)To a 500 mL three-necked flask, 8 g of hydrazine, hydrazine-dimethylacetamide was added, and heated to 65 ° C under a nitrogen gas stream. The monomer hydrazine was added dropwise thereto over 4 hours: 14.3 g, acrylonitrile ( </ br> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> 49 201228822 /pif After the completion of the dropwise addition, the reaction solution was further stirred for 3 hours. It was added with N, dimethyl acetamide 41 g, and the reaction solution was cooled ==. To the reaction solution, a 4-hydroxyl TEMp shirt was added as ti_g and a circle of 54.8 g, and it was made into a small amount at room temperature (4), and then a 70 mass% methanesulfonic acid aqueous solution 54 was added to the reaction liquid. Re-sinking the hall, and then taking out the solid matter ^ Α Α (weight average molecular weight is 3 4 magic (Mw / Mn = is in the polymerization potential difference automatic titration device (Kyoto Electronics Industry Co., Ltd.) as a titration Gl Μ &amp; Oxygen water-soluble silk measurement = the acid value of the extract A, and the acid value of the polymer a was 3 9 '. ♦ &amp; using an infrared (infrared 'IR) measuring machine (manufactured by Horiba): Identification of the obtained polymer A. (The compound was dissolved in _ and was carried out using KBr crystal. Ir = 吏 果 ' observed peaks around 2240 cm · 1 and is known;; = the nitrile has been Inductively into the polymer. In addition, by acid value, it is known that acrylic acid is added as a unit. In addition, the polymer is dissolved in 300 MHz manufactured by DimethylSUlfoxide (DMSO) tq_JBruk7r. NMR (AV-3〇0) was measured and observed in 2 5 〇 7 (5H) The broad peak of the nitrile-containing unit is 7.8-8.1 ppm 5.8-5.6 ppm(lH^).5; 4.52 ppm (m), 4.2_3.9 ppm (2H), 3·3_3 5 ppm (2h In 2.5-〇·7ρΡΙη (6Η), a broad peak corresponding to the polymerizable group was observed at 2.5-0.7 ppm (3Η), and a broad peak corresponding to Wei Weifan was observed, and the polymerizability was observed. Base unit: nitrile-containing unit: 201228822 jyy» /pif minus 2Γ0:30:40 —%)

40mol% OOH O^o CN d;0( HN 〇 人 (合成例2 :聚合物B) 向1000 ml的二口植#山 a 粍瓶中添加Ν-甲基吡咯啶酮35g, 加熱至75t:為止。歷時2.5小時向其中滴 加丙烯酸2-羥基乙酿r古隹α ± 丙烯酸2·氰京化絲造)6.60 g、 那氰基乙g曰28.4g、及v_601 (和光純藥製造)〇65 g的N_甲基轉咬_ 35 g溶液。滴加結束後,將反應溶液 加熱至8GC為止’進而麟3小時。其後,將反應溶液冷 卻至室溫為止。 向上述反應溶液中添加二第三丁基對苯二酚〇29 g、 二月桂酸二丁基錫0.29 g、Karenz AOI (昭和電工(股份) 製造)18.56 g、及N-曱基吼洛咬酮19 g,並於55°C下進 行6小時反應。其後,向反應液中添加甲醇3.6 g,進而進 行1.5小時反應。反應結束後’於水中進行再沈澱,然後 取出固形物’獲得聚合物B25 g。 (結構的鑑定) 51 201228822 使聚合物B溶解於重DMSO中, 的300 MHz的NMR ( AV-300 )進行測定 ’並利用Bruker製造 。於 4.3-4.05 ppm40 mol% OOH O^o CN d; 0 (HN 〇人(Synthesis Example 2: Polymer B) To a 1000 ml Erkouzhi #山a 粍 bottle, 35 g of Ν-methylpyrrolidone was added and heated to 75 t: To this, 2.5-hour of acrylic acid was added dropwise to the 2-hydroxyethyl ruthenium ruthenium ruthenium ruthenium ruthenium ruthenium ruthenium ruthenium ruthenium ruthenium ruthenium. 65 g of N_methyl to bite _ 35 g solution. After the completion of the dropwise addition, the reaction solution was heated to 8 GC until further 3 hours. Thereafter, the reaction solution was cooled to room temperature. To the above reaction solution, 29 g of dibutyl butyl hydroquinone oxime, 0.29 g of dibutyltin dilaurate, 18.5 g of Karenz AOI (manufactured by Showa Denko KK), and N-mercapto guanidone 19 were added. g, and the reaction was carried out at 55 ° C for 6 hours. Thereafter, 3.6 g of methanol was added to the reaction liquid, and the reaction was further carried out for 1.5 hours. After the completion of the reaction, 'reprecipitation was carried out in water, and then the solid matter was taken out to obtain a polymer B25 g. (Identification of structure) 51 201228822 Polymer B was dissolved in heavy DMSO, and 300 MHz of NMR (AV-300) was measured and manufactured by Bruker. At 4.3-4.05 ppm

2.5-1.3 ppm (3H 分)内 l蜂,於 7.2-7.3 ppm ( lH (2H 分)、2.9-2.8 ppm ( 2H 分)、2.5-1 觀察到相當於含腈基單元的寬廣波蜂, 分)、6.4-6.3 ppm (1H 分)、6.2-6.1 ppm ( 1H 分)、6.0-5.9 PPm( 1H 分)、4.3-4.05 PPm( 6H 分)、3·3_3.2 ppm( 2H 分)、 2.5-1.3 ppm ( 3H分)内觀察到相當於含聚合性基單元的寬 廣波峰,且可知含聚合性基單元:含腈基單元=2〇 : 8〇 (mol% )。 (分子量的測定) 使聚合物B溶解於四氫夫喃(Tetrahydrofuran,THF) 中’並使用Tosoh製造的高速凝膠滲透層析儀(Gei Permeation Chromatograph,GPC) (HLC-8220GPC)進行 分子量的測定。其結果,於23.75分鐘處出現波峰,且可 知以聚苯乙烯換算計Mw= 53000 (Mw/Mn= 1.9)。 再者,以下的聚合物B的化學式中的數值表示各單元 的莫耳%。 [化 11]2.5-1.3 ppm (3H points) 1 bee, at 7.2-7.3 ppm (1H (2H points), 2.9-2.8 ppm (2H points), 2.5-1 observed a broad-wave bee corresponding to nitrile-containing units, ), 6.4-6.3 ppm (1H points), 6.2-6.1 ppm (1H points), 6.0-5.9 PPm (1H points), 4.3-4.05 PPm (6H points), 3·3_3.2 ppm (2H points), 2.5 A broad peak corresponding to the polymerizable group-containing unit was observed in -1.3 ppm (3H minutes), and it was found that the polymerizable group-containing unit: nitrile group-containing unit = 2 〇: 8 〇 (mol%). (Measurement of molecular weight) Polymer B was dissolved in tetrahydrofuran (THF) and molecular weight was measured using a high-speed gel permeation chromatograph (GPC) manufactured by Tosoh (HLC-8220GPC). . As a result, a peak appeared at 23.75 minutes, and it was found that Mw = 53000 (Mw / Mn = 1.9) in terms of polystyrene. Further, the numerical values in the chemical formula of the following polymer B represent the molar % of each unit. [化11]

&lt;實例1 &gt; 52 201228822 jyye/pif [基板的製作] 將玻璃環氧基板(日立化成(股份)製造的 MCL-E679W)用作基板,以成為如表1中所記載的=粗 糙度(Rz)的方式實施研磨,並利用水與醇進行清洗。/ 其後’使用後述的組成的塗佈液(M),以使乾燥後 的膜厚成為2 μιη的方式藉由旋塗法來進行塗佈,並^以 乾燥而設置密接輔助層。再者,如表丨所示,於規定的 度下進行熱硬化。 [聚合物層的形成] 其後,藉由旋塗法來塗佈後述的組成的塗佈液A,並 ΖΖΓ&quot;面進行uv曝光。其後’利㈣碳酸氫 層=板増接輔助層直接結合的聚合物 [觸媒的賦予]&lt;Example 1 &gt; 52 201228822 jyye/pif [Production of substrate] A glass epoxy substrate (MCL-E679W manufactured by Hitachi Chemical Co., Ltd.) was used as a substrate to have the roughness as described in Table 1 ( Grinding is carried out in the manner of Rz), and washing with water and alcohol. Then, the coating liquid (M) having the composition described later is applied by spin coating so that the film thickness after drying is 2 μm, and the adhesion assisting layer is provided by drying. Further, as shown in Table ,, thermal hardening is performed at a predetermined degree. [Formation of Polymer Layer] Thereafter, the coating liquid A having the composition described later was applied by a spin coating method, and uv exposure was performed on the surface. Thereafter, the "di(4) hydrogencarbonate layer = the polymer directly bonded to the auxiliary layer of the plate [the application of the catalyst]

記載得的聚合物層的基板浸潰於表1中所 繼而在又τ觸媒液中(浸潰時間:10分鐘’液溫:40。〇)。 :二= 合物層中的PH下降,於〗-L—H 聚i物二上1中輕輕沖洗聚合物層表面,繼而,將 合物^潰於表1中所記载㈣核巾。其後,於含有 40 mmol/L 的 NaOH 蛊 29 击曰 Λ 3 有 為12)(相當於含有重置%的—的驗性水溶液(ΡΗ 中,以自聚合物解鍍鋼液的還原成分的還原劑) 洗,而對聚合物層職予=餘的上述還原液的方式進行沖 53 201228822 /pif 外製作樣品 再者,對於聚合物層的觸媒附著量是另 並藉由質量分析來定量。 [鍍敷] 繼而,對被賦予了觸媒的聚合物層進行無電解鑛銅。 無電解鍍敷是利用使用了 Thru-Cup PGT (上村工業製造) 的下述組成的無電解鍍浴,於浴溫為30&lt;t下使聚合物層浸 潰,並以使鍍敷析出厚度成為0.6μιη的方式形成鍍銅^。 無電解鑛敷液的調夜jl丨員序及原料如下所述。 蒸館水約60容量% PGT-A9.0 容量% PGT-B 6.0 容量% PGT-C 3.5 容量% 甲醛液* 2.3容量% 最後’以使總量成為1〇〇容量%的方式利用蒸餾水進 行液面調整。 *此處所使用的甲醛是和光純藥的曱醛液(特級)。 繼而,使用以下的組成的電解鍍銅浴,以使銅厚成為 20 μιη的方式實施電解錢趣j ( 〇 6 A/dm2: 15分鐘、3 A/dm2: 35分鐘),而獲得具有導電層的積層體。 (電解鍍銅浴的組成) 1000重量份 110重量份 270重量份 0.2重量份 •水 •硫酸銅五水合物 •98%硫酸 •35%鹽酸 201228822 jy^o/pu •Meltex 製造 ’ Copper Gleam ST-901M 30 重量份 &lt;評價:密接性&gt; 利用方格剝離試驗(HS-K5600-5-6 : 1999),對所獲 得的鍍敷膜進行百格剝離試驗。將結果記載於表丨中。 [触刻]The substrate of the polymer layer thus described was impregnated in Table 1 and further in the τ catalyst liquid (immersion time: 10 minutes' liquid temperature: 40 Å). : The pH of the di-layer was decreased, and the surface of the polymer layer was gently washed in the -L-H polyi-e1, and then the compound was broken down to the (4) core towel described in Table 1. Thereafter, in an aqueous solution containing 40 mmol/L NaOH 蛊29, which is 12) (corresponding to a % of replacement), the reducing component of the molten steel from the polymer is dehydrated. The reducing agent) is washed, and the polymer layer is used for the remainder of the above-mentioned reducing liquid. 53 201228822 /pif Externally produced sample Further, the amount of catalyst attached to the polymer layer is additionally quantified by mass analysis. [Plating] The electroless copper plating is carried out on the polymer layer to which the catalyst is added. The electroless plating is an electroless plating bath using the following composition using Thru-Cup PGT (manufactured by Uemura Industrial Co., Ltd.). The polymer layer was impregnated at a bath temperature of 30 ° t, and copper plating was formed so that the plating deposition thickness became 0.6 μm. The electroless plating solution was prepared as follows. Steaming water approximately 60% by volume PGT-A9.0 Capacity % PGT-B 6.0 Capacity % PGT-C 3.5 Capacity % Formaldehyde liquid * 2.3% by volume The last 'distilled water is used to make the total amount 1% by volume Surface adjustment. * The formaldehyde used here is the furfural liquid of Wako Pure Chemical (Special grade) Then, an electrolytic copper plating bath having the following composition was used to carry out electrolysis (so 6 A/dm 2 : 15 minutes, 3 A/dm 2 : 35 minutes) so that the copper thickness became 20 μm, thereby obtaining conductivity. Layered layer. (Composition of electrolytic copper plating bath) 1000 parts by weight 110 parts by weight 270 parts by weight 0.2 parts by weight • Water • Copper sulfate pentahydrate • 98% sulfuric acid • 35% hydrochloric acid 201228822 jy^o/pu • Made by Meltex 'Copper Gleam ST-901M 30 parts by weight&lt;Evaluation: Adhesiveness&gt; The obtained plating film was subjected to a hundred-bar peeling test by a checkered peel test (HS-K5600-5-6: 1999). In the form. [Tactile]

對實施了電解鍍銅的基板進行l8〇°C/1小時的熱處理 後’利用真空積層機(名機製作所(股份)製造:mvlp_600) 以70 C、0.2 MPa將乾式抗蝕劑膜(日立化成(股份)製 造,RY3315’膜厚為Ι5μιη)積層於該基板的表面。繼而, 使積層有乾式抗蝕劑膜的基板與可形成JpCA_ET〇1中所 規定的梳型配線(依據jPCA_bu〇1_2〇〇7)的玻璃遮罩密 接’利用中心波長為405 nm的曝光機對抗勉劑照射7〇mJ Μ U.Z Mh的噴壓對曝光後的基板噴附1%Na2(:〇3 水溶液而it行縣。其後,騎紐的水洗、機,而於 鍵銅膜上形成減成法用的抗蝕劑圖案。 於溫度4(TC下將形成有抗蝕劑圖案的基板浸潰於 FeC^/HCl水溶液(侧液)巾,藉此進行触刻而將未形 成抗钱劑圖案的區域巾所存在的賴膜去除。其後,以Μ MPa的喷壓對基板上噴附3%Na〇H水溶液, 圖案膨潤剝離,然後利们G%硫酸水溶液進彳^和處理 =進^洗’藉此獲得梳型配線(圖案狀錢銅膜)得 的配線的 L/S = 20 μιη/75 μηι。 &lt;評價:蝕刻特性(微細配線形成性)&gt; 利用顯微鏡雜辭驟中所獲得的圖案狀賴膜進行 55 201228822 jy^o /μιι 觀察,將觀察到配線的斷線或變細、變粗、彎曲等缺陷的 情況評價為「X」’將未觀察到缺陷且配線的直線性優異的 情況評價為「〇」。將所獲得的結果作為「微細配線形成性」 記載於表1中。 再者,所謂配線的變細,是指配線變細至設計值的2/3 以下’所謂配線的變粗,是指配線變粗至設計值的4/3以 上’所謂配線的彎曲’是指超過所設計的配線寬度的 倍的寬度區域,配線蜿蜒。 &lt;評價:蝕刻特性(金屬殘渣去除性)&gt; 利用市售的氣化鐵液(鹤見曹達(股份)製造,4〇°Be,) 對上述鍵敷步驟中所獲得的銅錄膜進行全面蚀刻,並對經 钮刻的部分的觸媒殘渣進行觀察。具體而言,於上述溶液 中(液溫:40。(:),使用Mikasa (股份)製造的蝕刻裝置 ED-1200對鍍銅膜進行2分鐘處理,然後進行蝕刻。 將蝕刻後的基板表面的色調與原來的基板相同的情況 作為金屬(銅)已被大致去除的情況而設為「〇」,將判明 少,的色調變化的情況設為「△」,將明顯著色成褐色或黑 色等的情況設為「x」。將所獲得的結果作為「金屬殘渣去 除性」S己载於表1中。 &lt;實例2〜實例14&gt; 以與貫例1相同的程序,並如表1中所記載般變更所 使用的密接辅助層形成用的塗佈液(J-1〜J-4、及κ)、聚 合物層形成用的塗佈液(A〜C)、觸媒液(S-1〜S-4)、及 還原液(Z-1〜Z_3)、以及基板的平滑性,而製作圖案狀鍍After heat-treating the substrate subjected to electrolytic copper plating at a temperature of 1 〇 ° C / 1 hour, the dry resist film was formed at 70 C and 0.2 MPa by a vacuum laminator (manufactured by Naji Seisakusho Co., Ltd.: mvlp_600). (Stock) manufactured, RY3315' film thickness is Ι5μιη) laminated on the surface of the substrate. Then, the substrate in which the dry resist film is laminated is adhered to the glass mask which can form the comb wiring (according to jPCA_bu〇1_2〇〇7) defined in JpCA_ET〇1, and the exposure machine with a center wavelength of 405 nm is used. The sputum is irradiated with 7 〇mJ Μ UZ Mh spray pressure on the exposed substrate by spraying 1% Na2 (: 〇3 aqueous solution and it is in the county. Thereafter, the rider is washed, machined, and formed on the bond copper film. A resist pattern for forming a method. The substrate having the resist pattern formed thereon is immersed in a FeC^/HCl aqueous solution (side liquid) at a temperature of 4 (TC), whereby the resist is not formed and the anti-money agent is not formed. The film in the patterned area towel is removed. Thereafter, a 3% Na〇H aqueous solution is sprayed onto the substrate by a spray pressure of ΜMPa, and the pattern is swollen and peeled off, and then the G% sulfuric acid aqueous solution is introduced into the substrate and processed into ^Washing' L/S = 20 μηη/75 μηι of the wiring obtained by the comb-shaped wiring (patterned copper film). <Evaluation: Etching characteristics (fine wiring formation property)> Using a microscope The obtained pattern-like film is observed at 55 201228822 jy^o /μιι, and the wire breakage or In the case of a defect such as thinness, thickening, or bending, it is evaluated as "X". The case where the defect is not observed and the linearity of the wiring is excellent is evaluated as "〇". The obtained result is described as "fine wiring formation property" in the table. In addition, the thinning of the wiring means that the wiring is reduced to 2/3 or less of the design value. The thickening of the wiring means that the wiring is thicker than 4/3 of the design value. ' is a width region that exceeds the width of the designed wiring, and the wiring is 蜿蜒. <Evaluation: Etching characteristics (metal residue removal)> Using a commercially available gasified iron liquid (manufactured by Tsurumi Soda (share), 4〇°Be,) The copper recording film obtained in the above bonding step is completely etched, and the catalyst residue in the button portion is observed. Specifically, in the above solution (liquid temperature: 40). (:), the copper plating film was treated for 2 minutes using an etching apparatus ED-1200 manufactured by Mikasa Co., Ltd., and then etched. The color of the surface of the substrate after etching was the same as that of the original substrate as metal (copper). Is roughly removed In the case of "〇", it is assumed that the change in color tone is "△", and the case where the color is noticeably colored in brown or black is "x". The obtained result is referred to as "metal residue removal property". "S" is shown in Table 1. <Example 2 - Example 14> The coating liquid for forming the adhesion assisting layer to be used was changed as described in Table 1 in the same procedure as in Example 1. 1 to J-4, and κ), a coating liquid (A to C) for forming a polymer layer, a catalyst liquid (S-1 to S-4), and a reducing solution (Z-1 to Z_3), and Smoothness of the substrate, and pattern plating

56 201228822 jyy» /pif 銅膜。另外, 示於表1。 進行與實例1相同的評價 將其結果亦—併 &lt;比較例1&gt; 作圖案狀鍍_1=結=^^。14目_程序來製 &lt;比較例2&gt; 於賦予觸媒時56 201228822 jyy» /pif Copper film. In addition, it is shown in Table 1. The same evaluation as in Example 1 was carried out, and the result was also - and <Comparative Example 1> was patterned-plated_1 = knot = ^^. 14 mesh_program system &lt;Comparative Example 2&gt;

J 义叩屮吾的包含鈀鹽的ALCUP ctmtorMAT-2-A (上村丄該份有限 鍍敷觸媒液S-卜除此以Μ茲士伽—/彳表以)不代替 咏此以外’錯由與實例1相同 製作圖案狀鍍銅膜。將評價結果示於表i。 &lt;比較例3&gt; 貝方1用以下所5己載的市售液的標準方法的觸媒的賦 予來代替實例1中所實_[觸媒的料],除此以外,藉 由與實例1相_程序來製作圖餘鑛_。將評價結果 示於表1。 (市售液的標準方法) 將具有上述所獲得的聚合物層的基板浸潰於 Thru-CupACL-009 (溫度:50〇C,浸潰時間:5分鐘)中, 其後進行水洗進而,其後將基板浸潰於ALCUP Activator MAT-2 (上村工業股份有限公司製造)中(溫度:6〇°c, 浸潰時間:5分鐘)’並進行水洗。進而,其後將基板浸潰 於ALCUP Reducer MAB (上村工業股份有限公司製造) 中(溫度· 35 C ’ 貝時間.3分鐘)’並進行水洗。進而, 57 201228822 /pif 其後將基板浸潰於ALCUP Accelerator MEL_3-A (上村工 業股份有限公司製造)中(溫度:26°C,浸潰時間:1分 鐘)。 再者,即便使用Activator MAT-31 (上村工業股份有 限公司製造)來代替Activator,亦可獲得相同的結果。 &lt;比較例4〜比較例6 &gt; 於賦予觸媒時,使用市售的包含纪鹽的ALCUP Activator MAT-2-A (上村工業股份有限公司製造)來代替 锻敷觸媒液S-1 ’並分別使用塗佈液(J-2)〜塗佈液(j_4) 來代替用於密接輔助層的製作的塗佈液除此以外, 藉由與實例1相同的程序來製作圖案狀鑛銅膜。將評價結 果示於表1。 &lt;比較例7&gt; 不使用密接輔助層,且於賦予觸媒時,使用市售的膠 狀錫鈀觸媒的預浸液(上村工業(股份)製造的Thru_Cup PED-104)、及市售的膠狀錫鈀觸媒(上村工業(股份)製 造的Thm-CupAT-105)以及市售的活性處理液(上村工業 (股份)製造的Thru-Cup AL-106)來代替鍍敷觸媒液S-1, 除此以外’藉由與實例1相同的程序來製作圖案狀鍍鋼膜。 &lt;比較例8&gt; 除變更基板的平滑性外,藉由與比_ 7㈣的程序 來製作圖案狀鍍銅膜。將評價結果示於表j。 &lt;比較例9&gt; 使用塗佈液(J-2 )來代替塗佈液(M ),並使用藉由 58 201228822 /pif 後述的方法所製作的金屬銅膠體來代替鍍敷觸媒液 (S-1),除此以外,藉由與實例丨相同的程序來製作圖案 狀鍍銅膜。將評價結果示於表i。 (金屬銅膠體) 將明膠30 g添加至7〇〇 ml的純水中,於液溫約6〇。〇 下使其溶解,繼而添加硫酸銅五水合物5〇g、及聚乙二醇 (平均分子量為2萬)1〇 g,並使該些溶解。 、繼而’添加α,α-雙吡啶20 mg,使其溶解後,添加濃 度為loo g/i的二甲胺硼烷水溶液12〇 ml,於液溫6(rc下 將銅離子還原成金屬銅。進而,於液溫乃艺下老化約1小 時後,將液溫冷卻至室溫為止,添加純水使水溶液的容量 變成1升。 提取該溶液100 ml ’並添加約800 ml的純水進行稀 釋’利用氫氧化鈉水溶液將稀釋液的pH調整成6,繼而, 添加純水使稀釋液的總量變成1升,而製成金屬銅膠體。 &lt;比較例1〇&gt; 使用塗佈液(J-2)來代替塗佈液(J-1),並使用市售 的奈米銅粉(粒徑為20 nm〜40 nm ) ( C〇pper nanopowder,和光純藥 045504,Alfa Aesar 製造)來代替 鍍敷觸媒液(S-1),除此以外,藉由與實例1相同的程序 來製作圖案狀鍍銅膜。將評價結果示於表1。 &lt;比較例11&gt; 除使用鍍敷觸媒液(S-5)來代替鍍敷觸媒液 以外,藉由與實例1相同的程序來製作圖案狀鍍銅膜。將 59 201228822 評價結果示於表1。 &lt;比較例12&gt; 除使用鍍敷觸媒液(S-6)來代替鍍敷觸媒液 以外,藉由與實例1相同的程序來製作圖案狀鍍鋼骐。將 評價結果示於表1。 ' &lt;比較例13&gt; 除使用鍍敷觸媒液(S-7)來代替鍍敷觸媒液(s-i) 以外,藉由與實例1相同的程序來製作圖案狀鑛銅膜。將 評價結果示於表1。 &lt;比較例14&gt; 除使用鍍敷觸媒液(S-8)來代替鍍敷觸媒液(S-1) 以外,藉由與實例1相同的程序來製作圖案狀鏟銅膜。將 評價結果示於表1。 再者,表1中的基板表面粗糙度是使用雷射顯微鏡(基 恩斯(Keyence )公司製造),以 JIS B 0601 ( 1994 年)、10 點平均高度法所測定的表面粗槌度Rz。 201228822 J-az,866rn 蝕刻特性 金屬殘潰 除去性 〇 &lt; &lt;1 &lt;] Ο &lt; Ο &lt; 〇 〇 Ο 〇 〇 〇 X X X X X X X X X 微細配線 形成性 〇 Ο 0 0 〇 Ο 〇 Ο 〇 〇 〇 〇 Ο 〇 X X X X X X X X X 方格剝離 格子殘存 100% 100% 100% 100% 100% 90% 100% 100% 100% 100% 100% ! loo% 100% 100% 100% 100% 100% 100% 100% 100% ο 100% 〇 還原液 N Ν Ν Ν Ν τ-Η Ν Ν CN Ν Ν 1&quot;Η Ν Ν Ν SI Ν 碡 觸媒附著量 50 mg/m2 80 mg/m2 100 mg/m2 30 mg/m2 40 mg/m2 80 mg/m2 200 mg/m2 30 mg/m2 120 mg/m2 50 mg/m2 50 mg/m2 50 xng/m2 50 mg/m2 CN t s o 100 mg/m2 50 mg/m2 50 mg/m2 30 mg/m2 40 mg/m2 50 mg/m2 10 mg/m2 30 mg/m2 50 mg/m2 鍍敷觸媒液 Τ—Η ζλ &lt;s ΓΟ fO ζλ 00 CN CZ3 °? xk Η ζΛ υη Η ζλ t/1 CO 硝酸銀 纪鹽 鈀鹽 纪鹽 纪鹽 ίε鹽 膠狀錫鈀 膠狀錫鈀 金屬銅膠體 &lt; C C (Ώ U &lt; &lt; &lt; &lt; &lt; &lt; &lt; &lt; &lt; &lt; &lt; &lt; &lt; C &lt; 碳 &lt; 密接補助層 (熱硬化) J-1(170°C、60 分鐘) J-1(170°C、60 分鐘) J-1(170°C、60 分鐘) J-1(170°C、60 分鐘) J-1(170°C、60 分鐘) κ(無熱硬化) J-1(170°C、60 分鐘) J-1(170°C、60 分鐘) J-2(180°C、30 分鐘) J-3(170°C、60 分鐘) J-4( 170°C、60 分鐘) J-1(170°C、60 分鐘) J-1(170°C、60 分鐘) J-1(170°C、60 分鐘) J-1(170°C、60 分鐘) J-1(170°C、60 分鐘) J-2(180°C、30 分鐘) J-3(170°C、60 分鐘) J-4(170°C、60 分鐘) J-2(180°C、30 分鐘) 基板表面粗 糙度(Rz) 0.2 μπι 0.2 μηι 0.2 μπι 0.2 μπι 0.2 μπι 0.2 μιη 0.2 μπι 0.2 μπι 2.1 μπι 0.2 μπι 0.2 μπι 0.2 μπι 0.2 μπι 0.2 μΐΏ 0.2 μπι 0.2 μπι 0.2 μπι 0.2 μπι 0.2 μπι 0.2 μηι 0.2 μηι 2.1 μπι 0.2 μηι 實施1 實施2 實施3 實施4 實施5 實施6 實施7 實施8 丨實施9 1 實施10 實施11 實施12 1實施13 1 實施14 比較1 比較2 比較3 1比較4 I 比較5 比較6 比較7 比較8 比較9 19 201228822 J-a卜oo66e / / / / / / 1 不進行鍍敷析出 不進行鍍敷析出 不進行鍍敷析出 不進行鍍敷析出 不進行鍍敷析出 不附著 不附著 不附著 20 mg/m2 5 mg/m2 金屬銅粉 C/3 '•Ο rp t/3 00 Xfl &lt; C &lt; &lt; &lt; J-2(180°C、30 分鐘) J-1(170°C、60 分鐘) J-1(170°C、60 分鐘) J-1(170°C、60 分鐘) J-1(170°C、60 分鐘) 0.2 μπι 0.2 μιη 0.2 μπι 0.2 μπι 0.2 μπι 比較10 比較11 比較12 比較13 比較14 201228822 〇yy〇 /pif &lt;密接輔助層用塗佈液&gt; (塗佈液(J-1)組成) •環己酮 52重量份 •液狀的雙F型環氧樹脂JER806,三菱化學製造 15重量份 •苯氧基樹脂YP-50EK30,新日鐵化學製造 30重量份 .酚醛清漆樹脂PHENOLITELA-7052,DIC製造 3重量份 •2-乙基-4-曱基咪唑 0.2重量份 (塗佈液(J-2)組成) •環戊酮 67重量份 •甲基乙基酮 5重量份 •液狀的雙F型環氧樹脂JER806,三菱化學製造 15重量份 •苯氧基樹脂YP-50,新曰鐵化學製造 10重量份 •酚醛清漆樹脂PHENOLITELA-7052,DIC製造 3重量份 •2-乙基-4-曱基咪唑 0.2重量份 (塗佈液(J-3)組成) •環戊酮 72重量份 •液狀的雙F型環氧樹脂JER806,三菱化學製造 15重量份 •苯氧基樹脂YP-50,新日鐵化學製造 10重量份 63 201228822 •曱酚酚醛清漆樹脂,Resitop PS-6937 製造 .2-乙基-4-曱基α米嗅 (塗佈液(J-4)纽成) ’群榮化學工孝· 3重量份 〇·2重量份 •環戊酮 72重量份 .液狀的雙F型環氧樹脂JER806,三菱化學製造 15重量份 .苯氧基樹脂ΥΡ-50,新曰鐵化學製造 10重量份 •酚醛清漆樹脂 PHENOLITELA-3018-50P,DIC 製造 3重量份 •2-乙基-4-甲基咪唑 0.2重量份 (塗佈液(Κ)組成) .曰本Zeon (股份)製造的Nipoll561 *固體成分濃度 為40.5質量%的水分散液 &lt;聚合物層用塗佈液&gt; (塗佈液A的組成) •1-曱氧基-2-丙醇 75重量份 .水 20重量份 •聚合物A 5重量份 (塗佈液B的組成) •乙腈 95重量份 •聚合物B 5重量份 (塗佈液C的組成) •1-曱氧基-2-丙醇 75重量份 64 201228822 jyyo /pif •水 •聚合物A •Irgacure907,汽巴精化製造 1重量份 &lt;鍍敷觸媒液&gt; (鍍敷觸媒液S-1的組成) .水 •乙酸銅(II) 再者,鍍敷觸媒液S-1的pH為5.6。 (鍍敷觸媒液S-2的組成) .水 •乙酸銅(II) •硝酸銀 再者,鍍敷觸媒液S-2的pH為4.2。 (鍍敷觸媒液S-3的組成) .水 •乙酸銅(II) •乙酸I巴 再者,鍍敷觸媒液S-3的pH為5.3。 (鍍敷觸媒液S-4的組成) .水 •乙酸銅(II) •硫酸銅(II) 再者,鍍敷觸媒液S-4的pH為3.2。 (鍍敷觸媒液S-5的組成) 20重量份 5重量份 100重量份 2重量份 100重量份 2重量份 0.2重量份 100重量份 2重量份 0.05重量份 100重量份 2重量份 1重量份 65 201228822 j f pii .水 •硫酸銅(II) 再者,鍍敷觸媒液S-5的pH為3.0。 (鍍敷觸媒液S-6的組成) •水 •氣化銅(II) 再者,鍍敷觸媒液S-6的pH為1.0。 (鍍敷觸媒液S-7的組成) •水 •確酸銀 (鍍敷觸媒液S-8的組成) .水 •乙酸把 &lt;還原液&gt; (還原液2_1的組成) .水 •二曱胺硼烷(簡稱DMAB) (還原液Z-2的組成) •水 •1 mol/L氫氧化納 •二曱胺硼烷(簡稱DMAB) •曱醛 (還原液Z-3的組成) •水 100重量份 2重量份 100重量份 2重量份 100重量份 0.2重量份 100重量份 0.05重量份 100重量份 1重量份 100重量份 5重量份 0.5重量份 0.5重量份 100重量份 66 201228822 j^y〇/pif 重量份 •硼氫化鈉 1㈣’本發_製造綠可獲得_膜雜刻 特性優異、且密接性優異的_狀鍍銅膜。 尤其 ’已確認若使崎賴舰巾不含_子或銀離 千的S-1,則金屬殘渣更少。 、另一方面,如比較例丨〜比較例6、及比較例13〜比 較例14獅,於專散獻1的實财所制的僅使用琐酸 銀或把鹽的It細祕液中,不進行鍍敷析出、或姓刻特性 另外,虽使用含有相當於全屬銅的金屬銅膠體或金屬 銅私的錢敷觸媒液時,所獲得麟銅賴密接性欠佳、或 蝕刻特性欠佳。 進而’當使用pH並非規定的範圍的鍍敷觸媒液S-5 及錢敷觸媒液S-6時’鍍敷觸媒不附著於聚合物層上,未 產生鍍敷的析出。 再者’於上述實例1中,藉由旋塗法來塗佈聚合物層 形成用的塗佈液,但即便使用浸塗法、喷塗法,亦可獲得 相同的評價結果。 另外’於上述實例1中,使聚合物層浸潰於鍍敷觸媒 液中’但即便噴塗、旋塗鍍敷觸媒液,亦可獲得相同的評 價結果。 進而’於實例1中,實施曝光來對聚合物層賊予能量, 但當It由150°C、30分鐘的加熱而進行硬化來代替曝光 時,亦可獲得相同的結果。 67 201228822 /pu &lt;實例15&gt; 實例的L/s變更為1G Mm/1G叫以外,藉由與 序來製作圖餘鍍峨。與實例1相同, 銅賴示優異的密接性,特性(「微 線$她」、「金m去除性」)。 &lt;實例16&gt; 物戶照射的圖案曝光來代替實例1中的聚合 光㈣貝;利用1%碳酸氣納水對未曝 曰「縮= 狀的聚合物層進行實例1中所進行的 :媒::予」及「鍍敷」,而於聚合物層上獲得鍍銅膜。 得的圖案寺藉由韻刻來調整所獲 同様優異。 鱗_職性與實例1 f外’於上射藉由雷射騎來 =::_由使用將金屬鉻設置成 來進打圓案形成時,與上述相同,亦顯示優異的 &lt;實例17&gt; 將實例1中所獲得的圖案狀鍍 f例1相同的程序’而形成多層配線結構。H二於 表面的賴__触亦_、1 〈實例 18&gt; J ^ 於事先形成有導電層(銅謂)的玻璃環氧基板上,對J. Aegis ctmtorMAT-2-A containing palladium salt (Supreme 丄 有限 有限 有限 触 触 触 触 — 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不 不A patterned copper plating film was produced in the same manner as in Example 1. The evaluation results are shown in Table i. &lt;Comparative Example 3&gt; Bayside 1 replaced the actual _[catalyst material] in Example 1 by the addition of the catalyst of the standard method of the commercially available liquid contained in the following five, and by way of example, 1 phase _ program to make a picture of the remaining mine _. The evaluation results are shown in Table 1. (Standard method of commercially available liquid) The substrate having the polymer layer obtained above was immersed in Thru-CupACL-009 (temperature: 50 〇C, immersion time: 5 minutes), and then washed with water, and After that, the substrate was immersed in an ALCUP Activator MAT-2 (manufactured by Uemura Kogyo Co., Ltd.) (temperature: 6 ° C, dipping time: 5 minutes) and washed with water. Further, the substrate was then immersed in an ALCUP Reducer MAB (manufactured by Uemura Kogyo Co., Ltd.) (temperature: 35 C 'bay time. 3 minutes) and washed with water. Further, 57 201228822 /pif Thereafter, the substrate was immersed in ALCUP Accelerator MEL_3-A (manufactured by Uemura Industrial Co., Ltd.) (temperature: 26 ° C, dipping time: 1 minute). Furthermore, even if Activator MAT-31 (manufactured by Uemura Kogyo Co., Ltd.) is used instead of Activator, the same result can be obtained. &lt;Comparative Example 4 to Comparative Example 6 &gt; When a catalyst was added, a commercially available ALCUP Activator MAT-2-A (manufactured by Uemura Kogyo Co., Ltd.) containing a salt was used instead of the forging fluid S-1. In the same manner as in Example 1, except that the coating liquid (J-2) to the coating liquid (j_4) were used instead of the coating liquid for the production of the adhesion assisting layer, the pattern copper ore was produced by the same procedure as in Example 1. membrane. The evaluation results are shown in Table 1. &lt;Comparative Example 7&gt; A prepreg of a commercially available colloidal tin-palladium catalyst (Thru_Cup PED-104 manufactured by Uemura Kogyo Co., Ltd.) and a commercially available product were used without using an adhesion assisting layer. Instead of the plating catalyst liquid, a colloidal tin-palladium catalyst (Thm-CupAT-105 manufactured by Uemura Industrial Co., Ltd.) and a commercially available active treatment liquid (Thru-Cup AL-106 manufactured by Uemura Industrial Co., Ltd.) In the same manner as in Example 1, except for the above, a patterned steel-plated film was produced. &lt;Comparative Example 8&gt; In addition to changing the smoothness of the substrate, a pattern-shaped copper plating film was produced by a procedure similar to that of _7 (4). The evaluation results are shown in Table j. &lt;Comparative Example 9&gt; The coating liquid (J-2) was used instead of the coating liquid (M), and the metal copper colloid produced by the method described later in 58 201228822 /pif was used instead of the plating catalyst liquid (S -1) Except for this, a patterned copper plating film was produced by the same procedure as in Example 。. The evaluation results are shown in Table i. (Metallic copper colloid) 30 g of gelatin was added to 7 μl of pure water at a liquid temperature of about 6 Torr. This was dissolved in 〇, and then 5 〇g of copper sulfate pentahydrate and 1 〇g of polyethylene glycol (average molecular weight of 20,000) were added, and the solution was dissolved. Then, 'add α,α-bipyridine 20 mg, dissolve it, add 12 〇ml of dimethylamine borane solution at a concentration of loo g/i, and reduce copper ions to metal copper at liquid temperature 6 (rc) Further, after aging for about 1 hour at the liquid temperature, the liquid temperature was cooled to room temperature, and pure water was added to make the volume of the aqueous solution 1 liter. Extract 100 ml of the solution and add about 800 ml of pure water for dilution. The pH of the diluted solution was adjusted to 6 with an aqueous sodium hydroxide solution, and then pure water was added to make the total amount of the diluted solution 1 liter, thereby preparing a metallic copper colloid. <Comparative Example 1 〇> Using a coating liquid (J -2) Instead of the coating liquid (J-1), and using commercially available nano copper powder (particle size 20 nm to 40 nm) (C〇pper nanopowder, Wako Pure Chemical Industries 045504, manufactured by Alfa Aesar) A pattern-shaped copper plating film was produced by the same procedure as in Example 1 except that the catalyst liquid (S-1) was plated. The evaluation results are shown in Table 1. <Comparative Example 11> In addition to using plating touch A pattern-like copper plating film was produced by the same procedure as in Example 1 except that the vehicle liquid (S-5) was used instead of the plating catalyst liquid. 59 201228822 The evaluation results are shown in Table 1. <Comparative Example 12> A patterned steel plating was produced by the same procedure as in Example 1 except that the plating catalyst liquid (S-6) was used instead of the plating catalyst liquid. The evaluation results are shown in Table 1. '&lt;Comparative Example 13&gt; The same procedure as in Example 1 was used except that the plating catalyst liquid (S-7) was used instead of the plating catalyst liquid (si). A patterned copper ore film was produced. The evaluation results are shown in Table 1. <Comparative Example 14> In addition to using a plating catalyst liquid (S-8) instead of the plating catalyst liquid (S-1), The pattern-like shovel copper film was produced in the same procedure as in Example 1. The evaluation results are shown in Table 1. In addition, the surface roughness of the substrate in Table 1 was a laser microscope (manufactured by Keyence Corporation), and JIS B 0601 was used. (1994), surface roughness Rz measured by the 10-point average height method. 201228822 J-az, 866rn etching characteristics metal detachment 〇 &lt;&lt;1&lt;1&lt;1&lt; Ο &lt; 〇〇Ο 〇〇〇XXXXXXXXX Fine wiring formability 〇Ο 0 0 〇Ο 〇Ο 〇〇〇〇Ο 〇XXXXXXXXX Square peeling grid residual 100% 100% 100% 100% 100% 90% 100% 100% 100% 100% 100% ! loo% 100% 100% 100% 100% 100% 100% 100% 100% ο 100% 〇 Reduction solution N Ν Ν Ν Ν τ-Η Ν Ν CN Ν Ν 1&quot;Η Ν Ν Ν SI Ν Contact amount of catalyst 50 mg/m2 80 mg/m2 100 mg/m2 30 mg/m2 40 mg/m2 80 mg /m2 200 mg/m2 30 mg/m2 120 mg/m2 50 mg/m2 50 mg/m2 50 xng/m2 50 mg/m2 CN tso 100 mg/m2 50 mg/m2 50 mg/m2 30 mg/m2 40 mg /m2 50 mg/m2 10 mg/m2 30 mg/m2 50 mg/m2 Plating Catalyst Τ-Η ζλ &lt;s ΓΟ fO ζλ 00 CN CZ3 °? xk Η ζΛ υη Η ζλ t/1 CO Salt palladium salt salt salt ίε salt colloidal tin palladium colloidal tin palladium metal copper colloid &lt; CC (Ώ U &lt;&lt;&lt;&lt;&lt;&lt;&lt;&lt;&lt;&lt;&lt;&lt;&lt;&lt;C&lt; Carbon &lt; Adhesive support layer (thermosetting) J-1 (170 ° C, 60 minutes) J-1 (170 ° C, 60 minutes) J-1 (170 ° C, 60 minutes) J- 1 (170 ° C, 60 minutes) J-1 (170 ° C, 60 minutes) κ (without heat hardening) J-1 (170 ° C, 60 minutes) J-1 (170 ° C, 60 minutes) J- 2 (180 ° C, 30 minutes) J-3 (17 0 ° C, 60 minutes) J-4 (170 ° C, 60 minutes) J-1 (170 ° C, 60 minutes) J-1 (170 ° C, 60 minutes) J-1 (170 ° C, 60 minutes) J-1 (170 ° C, 60 minutes) J-1 (170 ° C, 60 minutes) J-2 (180 ° C, 30 minutes) J-3 (170 ° C, 60 minutes) J-4 (170 °C, 60 minutes) J-2 (180°C, 30 minutes) Substrate surface roughness (Rz) 0.2 μπι 0.2 μηι 0.2 μπι 0.2 μπι 0.2 μπι 0.2 μιη 0.2 μπι 0.2 μπι 2.1 μπι 0.2 μπι 0.2 μπι 0.2 μπι 0.2 μπι 0.2 μΐΏ 0.2 μπι 0.2 μπι 0.2 μπι 0.2 μπι 0.2 μπι 0.2 μηι 0.2 μηι 2.1 μπι 0.2 μηι Implementation 1 Implementation 2 Implementation 3 Implementation 4 Implementation 5 Implementation 6 Implementation 7 Implementation 8 Implementation 9 1 Implementation 10 Implementation 11 Implementation 12 1 Implementation 13 1 Implementation 14 Comparison 1 Comparison 2 Comparison 3 1 Comparison 4 I Comparison 5 Comparison 6 Comparison 7 Comparison 8 Comparison 9 19 201228822 Ja oo66e / / / / / / 1 No plating deposition, no plating deposition, no plating deposition Plating is carried out without plating, no adhesion, no adhesion, no adhesion, 20 mg/m2, 5 mg/m2, metal copper powder, C/3 '•Ο Rt t/3 00 Xfl &lt; C &lt;&lt;&lt; J-2 (180 ° C, 30 minutes) J-1 (170 ° C, 60 minutes) J-1 (170 ° C, 60 minutes) J- 1 (170 ° C, 60 minutes) J-1 (170 ° C, 60 minutes) 0.2 μπι 0.2 μιη 0.2 μπι 0.2 μπι 0.2 μπι Compare 10 Compare 11 Compare 12 Compare 13 Compare 14 201228822 〇yy〇/pif &lt; Coating liquid for layer&gt; (composition of coating liquid (J-1)) • 52 parts by weight of cyclohexanone • Liquid double F-type epoxy resin JER806, manufactured by Mitsubishi Chemical 15 parts by weight • Phenoxy resin YP- 50EK30, 30 parts by weight of Nippon Steel Chemical Co., Ltd. PHENOLITELA-7052, 3 parts by weight of DIC, 0.2 parts by weight of 2-ethyl-4-mercaptoimidazole (composition of coating liquid (J-2)) 67 parts by weight of pentanone • 5 parts by weight of methyl ethyl ketone • Liquid double F-type epoxy resin JER806, 15 parts by weight of Mitsubishi Chemical • Phenoxy resin YP-50, 10 parts by weight of Xinyi Iron Chemical Co., Ltd. • Novolak resin PHENOLITELA-7052, 3 parts by weight of DIC•0.2 parts by weight of 2-ethyl-4-mercaptoimidazole (composition of coating liquid (J-3)) • 72 parts by weight of cyclopentanone • Double F in liquid form Epoxy resin JER806, manufactured by Mitsubishi Chemical 15 parts by weight • Phenoxy resin YP-50, Nippon Steel Chemical Co., Ltd. 10 parts by weight 63 201228822 • Nonylphenol novolac resin, Resitop PS-6937 Manufacture. 2-Ethyl-4-曱基α米嗅 (coating solution (J-4) New Cheng) 'Qunrong Chemical Gong Xiao · 3 parts by weight 〇 · 2 parts by weight • 72 parts by weight of cyclopentanone. Liquid double F type epoxy resin JER806 , Mitsubishi Chemical manufactures 15 parts by weight. Phenoxy resin ΥΡ-50, 10 parts by weight of Xinyi Iron Chemical Co., Ltd. • Phenolic styrene resin PHENOLITELA-3018-50P, DIC Manufactured 3 parts by weight • 2-ethyl-4-methylimidazole 0.2 parts by weight (coating liquid composition) Nipoll 561 manufactured by Zeon Zeon Co., Ltd. *Aqueous dispersion having a solid concentration of 40.5 mass% &lt;coating liquid for polymer layer&gt; (coating liquid A Composition) • 1-oximeoxy-2-propanol 75 parts by weight. Water 20 parts by weight • Polymer A 5 parts by weight (composition of coating liquid B) • Acetonitrile 95 parts by weight • Polymer B 5 parts by weight ( Composition of coating liquid C) • 1-methoxy-2-propanol 75 parts by weight 64 201228822 jyyo /pif • Water • Polymer A • Irga Cure907, Ciba refined to produce 1 part by weight &lt;plating catalyst liquid&gt; (composition of plating catalyst liquid S-1). Water • Copper acetate (II) Further, plating catalyst liquid S-1 The pH is 5.6. (Composition of plating catalyst liquid S-2) Water • Copper acetate (II) • Silver nitrate Further, the pH of the plating catalyst liquid S-2 was 4.2. (Composition of plating catalyst liquid S-3) Water • Copper acetate (II) • Acetic acid I bar Further, the pH of the plating catalyst liquid S-3 was 5.3. (Composition of plating catalyst liquid S-4) Water • Copper acetate (II) • Copper sulfate (II) Further, the pH of the plating catalyst liquid S-4 was 3.2. (Composition of plating catalyst liquid S-5) 20 parts by weight 5 parts by weight 100 parts by weight 2 parts by weight 100 parts by weight 2 parts by weight 0.2 parts by weight 100 parts by weight 2 parts by weight 0.05 parts by weight 100 parts by weight 2 parts by weight 1 weight Part 65 201228822 jf pii . Water • Copper (II) sulfate Further, the pH of the plating catalyst S-5 was 3.0. (Composition of plating catalyst liquid S-6) • Water • Gasified copper (II) Further, the pH of the plating catalyst liquid S-6 was 1.0. (Composition of plating catalyst liquid S-7) • Water • Acidic silver (composition of plating catalyst liquid S-8) • Water • acetic acid &lt;reducing liquid&gt; (composition of reducing liquid 2_1) • Diamine borane (DMAB) (composition of reducing solution Z-2) • Water • 1 mol/L sodium hydroxide • Diamine borane (DMAB) • Furfural (reducing liquid Z-3 composition) • Water 100 parts by weight 2 parts by weight 100 parts by weight 2 parts by weight 100 parts by weight 0.2 parts by weight 100 parts by weight 0.05 parts by weight 100 parts by weight 1 part by weight 100 parts by weight 5 parts by weight 0.5 parts by weight 0.5 parts by weight 100 parts by weight 66 201228822 j^y〇/pif parts by weight • Sodium borohydride 1 (four) 'The present invention _ Manufactured green _ A copper plating film which is excellent in film etch characteristics and excellent in adhesion. In particular, it has been confirmed that if the Kawasaki ship does not contain S-1 or silver, the amount of metal residue is less. On the other hand, as in Comparative Example 比较 to Comparative Example 6, and Comparative Example 13 to Comparative Example 14 lion, in the It fine liquid made of only the silver sulphate or the salt, which is made by the company When plating is not carried out, or the characteristics of the surname are not used, the use of a metal-copper colloid or a metal-copper-like material containing a copper-based colloidal liquid is not preferable, or the etching property is poor or the etching property is insufficient. good. Further, when the plating catalyst liquid S-5 and the money application catalyst liquid S-6 having a pH not in a predetermined range are used, the plating catalyst does not adhere to the polymer layer, and plating deposition does not occur. Further, in the above Example 1, the coating liquid for forming a polymer layer was applied by a spin coating method, but the same evaluation results were obtained even by the dip coating method or the spray coating method. Further, in the above Example 1, the polymer layer was immersed in the plating catalyst liquid, but the same evaluation result was obtained even if the plating solution was sprayed or spin-coated. Further, in Example 1, exposure was carried out to impart energy to the polymer layer thief, but the same result was obtained when It was hardened by heating at 150 ° C for 30 minutes instead of exposure. 67 201228822 /pu &lt;Example 15&gt; The L/s of the example is changed to 1G Mm/1G, and the pattern is etched by the order. As in the case of Example 1, copper showed excellent adhesion and properties ("microwire $her", "gold m removal"). &lt;Example 16&gt; A pattern exposure of the household illumination was used instead of the polymerized light (4) in Example 1; the unexposed "polymerized layer" was subjected to the example 1 in the case of the 1% carbonic acid gas nano-water: "Pre-" and "plating", and a copper plating film is obtained on the polymer layer. The pattern temple obtained by the rhyme is used to adjust the superiority of the peers. Scales _ Occupation and Example 1 f outside 'in the upper shot by laser riding =:: _ by using metal chrome to form a round case, the same as above, also shows excellent &lt;Example 17&gt The same procedure as in the pattern-like plating example 1 obtained in Example 1 was carried out to form a multilayer wiring structure. H 2 is on the surface of the __ touch _, 1 <Example 18> J ^ on the glass epoxy substrate on which the conductive layer (copper) is formed in advance,

68 2〇1228822f 作為電氣絕緣層的Ajinomoto Fine-Techno公司製造的環氣 系絕緣骐GX-13 (膜厚為45 μιη)進行加熱、加壓,然後 利用真空積層機於0.2 MPa的壓力下以10(TC〜110°C的條 件進行黏接,從而形成絕緣膜。 繼而,依次進行實例1中所進行的[聚合物層的形成]、 [觸媒的賦予]、[鍍敷],而獲得具備導電膜的積層體。 [通孔的形成] 繼而,針對積層體,使用UV-YAG雷射以頻率5000 HZ 於發數為200〜300之間、脈衝能量為〇.〇5 mJ〜0.12 mJ 之間進行調整,而形成通孔的頂徑為60 μηι的到達導電層 表面為止的通孔。 [除膠渣處理] 作為除膠渣方法,於70。(:下將積層體在含有20容量 %的MLB211 (Rohm and Hass電子材料股份有限公司製 造)、10容量%的CupositZ的膨潤浴中浸潰7分鐘後,於 80°C下在含有10容量%的MLB213A(RohmandHass電子 材料股份有限公司製造)與15容量%的MLB213B (Rohm and Hass電子材料股份有限公司製造)的钱刻浴中進行 分鐘浸潰處理,然後於45。(:下在含有20容量%的 MLB216-2 (Rohm and Hass電子材料股份有限公司製造) 的中和浴中浸潰7分鐘,藉此實施通孔的除膠渣處理。 [觸媒賦予] 利用與比較例7相同的觸媒賦予方法,對實施了除膠 渣處理的積層體的通孔壁面賦予電解鍍敷觸媒。 69 201228822 繼而,針對被賦予了鑛敷觸媒的積層艏,使用上村工 業(股份)製造的Thru-Cup PGT,並利用下述組成的無電 解鍍浴,於無電解鍍敷溫度為26。(:下進行2〇分鐘的無電 解鍍敷’並以使基板上的導電層與鑛膜導通的方式製作無 電解鍍銅膜(厚度:0.3 μπι)。 無電解鍍液的調液順序及原料如下所述。 蒸餾水約60容量% PGT-A9.0 容量% PGT-B 6·0 容量% PGT-C3.5 容量% 曱醛液冰2.3容量% 最後,以使總量成為100容量%的方式利用蒸餾水進 行液面調整。 *此處所使用的曱醛是和光純藥的甲醛液(特級)。 [電解鍍敷用的鍍敷抗蝕劑層的形成與圖案化] 利用1%硫酸水溶液對銅表面進行清洗後,以溫度68 2〇1228822f The ring gas-based insulating material GX-13 (film thickness: 45 μm) manufactured by Ajinomoto Fine-Techno Co., Ltd., which is an electrical insulating layer, is heated and pressurized, and then vacuum-layered at a pressure of 0.2 MPa to 10 (The insulating film is formed by bonding under conditions of TC to 110 ° C. Then, [formation of polymer layer], [application of catalyst], [plating] performed in Example 1 are sequentially performed, and obtained a laminated body of a conductive film. [Formation of via holes] Then, for a laminated body, a UV-YAG laser is used at a frequency of 5000 HZ at a frequency of 200 to 300, and a pulse energy is 〇.〇5 mJ to 0.12 mJ. The adjustment is made to form a through hole having a top diameter of the through hole of 60 μm to the surface of the conductive layer. [Slag removal treatment] As a desmear method, at 70. (: The laminate is contained in 20% by volume. MLB211 (manufactured by Rohm and Hass Electronic Materials Co., Ltd.) and 10% by volume of CupositZ in a swelling bath for 7 minutes, and then contained 10% by volume of MLB213A (manufactured by RohmandHass Electronic Materials Co., Ltd.) at 80 °C. With 15% capacity of MLB213B (Rohm and Hass Minutes impregnation treatment in the money bath of the Material Co., Ltd., and then immersed in a neutralization bath containing 20% by volume of MLB216-2 (manufactured by Rohm and Hass Electronic Materials Co., Ltd.) The desmear treatment of the through holes was carried out for 7 minutes. [Catalyst application] Electrolytic plating was applied to the through-hole wall surface of the layered body subjected to the desmear treatment by the same catalyst application method as in Comparative Example 7. Catalyst 69 201228822 Then, the Thru-Cup PGT manufactured by Uemura Industrial Co., Ltd. is used for the laminated enamel to which the mineralizing catalyst is applied, and the electroless plating bath having the following composition is used at the electroless plating temperature. 26. (: 2 hours of electroless plating is carried out) and an electroless copper plating film (thickness: 0.3 μm) is formed so that the conductive layer on the substrate is electrically connected to the mineral film. The liquid transfer order of the electroless plating solution The raw materials are as follows: Distilled water approximately 60% by volume PGT-A9.0 Capacity % PGT-B 6·0 Capacity % PGT-C3.5 Capacity % Furfural liquid ice 2.3% by volume Finally, the total amount is 100% by volume The method uses distilled water for liquid level adjustment. * The furfural used here is a formaldehyde solution (special grade) of Wako Pure Chemicals. [Formation and patterning of a plating resist layer for electrolytic plating] After washing the copper surface with a 1% sulfuric acid aqueous solution, the temperature is used.

110±10°C、壓力0.35±0.05Mpa積層乾膜抗蝕劑(ALPHO NIT3025 : Nichigo-Morton (股份)公司製造)。電路圖案 的燒附,將導孔作為基準利用超高壓水銀燈以12〇 mj/em2 照射紫外線來實施圖案曝光後,使用1%碳酸鈉水溶液於 30°C下以0.15 MPa的喷壓對乾膜抗蝕劑進行顯影而形成 鍍敷抗蝕劑圖案。 [電解鍍敷] 將導電層、鍍敷膜、無電解鍍銅膜作為供電層,使用 201228822 ~&gt;yy〇 /yif 下進行45分鐘鍍 Z述組成的電解銅鍍浴於3 A/dm2的條件 (電解鍍浴的組成)110±10°C, pressure 0.35±0.05Mpa laminated dry film resist (ALPHO NIT3025: manufactured by Nichigo-Morton Co., Ltd.). The pattern is baked, and the pattern is exposed by irradiating ultraviolet rays with an ultrahigh pressure mercury lamp at 12 〇mj/em2 using a pilot hole as a reference, and then using a 1% sodium carbonate aqueous solution at 30 ° C with a spray pressure of 0.15 MPa on the dry film. The etchant is developed to form a plating resist pattern. [Electrolytic plating] A conductive layer, a plated film, and an electroless copper plating film were used as a power supply layer, and an electrolytic copper plating bath having a plating composition of 45 minutes was used for 3 minutes at 3 A/dm2 using 201228822 ~&gt;yy〇/yif. Condition (composition of electrolytic plating bath)

•硫酸銅38 g •硫酸95g •鹽酸1 mL• Copper sulfate 38 g • Sulfuric acid 95 g • Hydrochloric acid 1 mL

Copper Gleam PCM (Meltex (股份)製造、Copper Gleam PCM (Meltex (share) manufacturing,

.水 500 g ; 3mLWater 500 g ; 3mL

[抗蝕劑的剝離與蝕刻] 4/量%氫氧化納水溶制作抗__液,於 ^以G·2 MPa的喷壓將其應用於表面i。。秒,藉此對 =敷抗触_案進行_去除處理。其後,以使用 圖案部分的基底導電層的銅消失的方式,利用雙氧水 軟_液進行去除’從而製成圖案狀的導電膜(參 “、、圖 4 ( G ))。 【圖式簡單說明】 圖1的(A)〜(D)分別是依次表示本發明的體 、製造方法中的各製造步驟的自基板至積層體為止的示音 剖面圖。 y^ ^圖2的(Α)〜(D)是依次表示本發明的積層體的製 造方法中的蝕刻步驟的一形態的示意剖面圖。 ^圖3的(A)〜(E)是依次表示本發明的積層體的製 造方法中的蝕刻步驟的其他形態的示意剖面圖。 圖4的(A)〜(H)是依次表示多層配線基板的製造 71 201228822 W ^ Λ. Λ. 步驟的示意剖面圖。 【主要元件符號說明】 10 :基板 12 :密接輔助層 14 :聚合物層 16、16b :含銅鍍敷膜 18 :圖案狀含銅鍍敷膜 20 :金屬配線 22 :絕緣性樹脂層 24 :遮罩 26、28 :金屬膜 30 :圖案狀金屬膜[Peeling and etching of resist] 4/% by weight of sodium hydroxide was dissolved in water to prepare an anti-_ liquid, which was applied to the surface i at a pressure of G·2 MPa. . In seconds, the _ removal process is performed on the = anti-touch. Thereafter, the copper film of the underlying conductive layer of the pattern portion is removed, and the conductive film is formed by removing it with hydrogen peroxide liquid (see ", Fig. 4 (G)). (A) to (D) of Fig. 1 are schematic cross-sectional views showing the manufacturing steps of the body and the manufacturing method of the present invention from the substrate to the laminated body, respectively. y^ ^ (Α) of Fig. 2 (D) is a schematic cross-sectional view showing an embodiment of an etching step in the method for producing a layered product of the present invention in order. ^(A) to (E) of FIG. 3 are sequential views showing a method of manufacturing a layered body of the present invention. A schematic cross-sectional view of another embodiment of the etching step. (A) to (H) of FIG. 4 are schematic cross-sectional views showing the steps of manufacturing the multilayer wiring substrate in sequence. 2012 20122222 W ^ Λ. 【. Substrate 12: adhesion assisting layer 14: polymer layer 16, 16b: copper-containing plating film 18: patterned copper-containing plating film 20: metal wiring 22: insulating resin layer 24: mask 26, 28: metal film 30 : Patterned metal film

7272

Claims (1)

201228822 七、申請專利範圍: ι· 一種具有圖案狀含銅鍍膜的積層體的製造方法,其 包括: 聚合物層形成步驟,於基板上,使具有與銅離子形成 相互作用的官能基及聚合性基的聚合物接觸基板後,賦予 能量而於上述基板上形成聚合物層; 觸媒賦予步驟,使含有銅離子、且pH超過3.〇的鍍敷 觸媒液與上述聚合物層接觸,而對聚合物層賦予銅離子; 第1鹼性水溶液接觸步驟,使被賦予了銅離子的聚合 物層與鹼性水溶液接觸; 鍍敷步驟,於上述第1驗性水溶液接觸步驟後,對聚 合物層至少進行鍍銅,而獲得含銅鍍膜;以及 圖案形成步驟,於上述鍍敷步驟後,將上述含銅鍍膜 蝕刻成圖案狀,而形成圖案狀含銅鍍膜。 2. 如申請專利範圍第1項所述之積層體的製造方法, ^中於上述第1驗性水溶液接觸步職且於上述鍍敷步驟 ^ ’更包括使被料了銅離子的聚合物層與還原液 還原步驟。 J 3. 如申,專利範圍第2項所述之積層體的製造方法, 二中於上述還原步微且於上述鍍敷步驟前,更包括使 ό物層與雜水雜細的帛2祕水溶賴觸步驟。 項中體,其藉由如申請專利範圍第1項至第3 貝中任一項所奴積層體的製造方法而獲得。 5· 一種印刷線路板,其包含如中請專利範圍第4項所 73 201228822 述之積層體。 6. —種電路,其包含如申請專利範圍第4項所述之積 層體。201228822 VII. Patent application scope: ι· A method for manufacturing a laminate having a patterned copper-containing coating, comprising: a polymer layer forming step of forming a functional group and a polymerizable property which interact with copper ions on a substrate After the base polymer contacts the substrate, energy is applied to form a polymer layer on the substrate; and a catalyst application step is performed to bring the plating catalyst liquid containing copper ions and having a pH exceeding 3. 接触 into contact with the polymer layer. Providing copper ions to the polymer layer; contacting the first alkaline aqueous solution to contact the polymer layer to which the copper ions are added, and the alkaline aqueous solution; and plating step, after the first aqueous solution contacting step, the polymer The layer is subjected to at least copper plating to obtain a copper-containing plating film, and a pattern forming step of etching the copper-containing plating film into a pattern after the plating step to form a patterned copper-containing plating film. 2. The method for producing a laminate according to claim 1, wherein the first aqueous solution is contacted and the plating step further comprises a polymer layer which is coated with copper ions. The reduction step with the reducing solution. J 3. The method for manufacturing a laminate according to claim 2, wherein the reduction step is microscopic and before the plating step, and further comprises a crucible layer and a miscellaneous water. Water soluble step. The intermediate body is obtained by a method for producing a laminated body as claimed in any one of claims 1 to 3 of the patent application. 5. A printed wiring board comprising the laminated body as described in claim 4, 201228,222. 6. A circuit comprising the laminate as described in claim 4 of the patent application. 7474
TW100135755A 2010-10-08 2011-10-03 Laminate body and fabricating method thereof, print circuit board and circuit TW201228822A (en)

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CN103619130A (en) * 2013-11-22 2014-03-05 华进半导体封装先导技术研发中心有限公司 Method for electroless copper plating on low-roughness substrate
US9445502B2 (en) 2013-05-30 2016-09-13 Nanchang O-Film Tech Co., Ltd. Flexible circuit connecting device
TWI589203B (en) * 2014-07-15 2017-06-21 Material Concept Inc Electronic parts and methods of making the same
TWI710020B (en) * 2019-10-24 2020-11-11 嘉聯益科技股份有限公司 Manufacturing method of flexible circuit board, electroplating solution and etching solution
CN112435974A (en) * 2019-02-22 2021-03-02 西安航思半导体有限公司 High strength DFN packaged semiconductor device
CN112714554A (en) * 2019-10-24 2021-04-27 嘉联益电子(昆山)有限公司 Manufacturing method of flexible circuit board, electroplating solution and etching solution
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CN103209546B (en) * 2013-04-03 2015-09-09 遂宁市广天电子有限公司 The manufacture method of the direct circuit etching of a kind of negative film
CN103260361B (en) * 2013-05-14 2016-07-06 金悦通电子(翁源)有限公司 A kind of HDI outer-layer circuit negative film processing method
WO2020071339A1 (en) * 2018-10-03 2020-04-09 Jsr株式会社 Method for producing substrate, composition, and polymer
JPWO2023053619A1 (en) * 2021-09-29 2023-04-06
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JP4189532B2 (en) * 2002-12-10 2008-12-03 奥野製薬工業株式会社 Method for activating catalyst for electroless plating
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US9445502B2 (en) 2013-05-30 2016-09-13 Nanchang O-Film Tech Co., Ltd. Flexible circuit connecting device
CN103619130A (en) * 2013-11-22 2014-03-05 华进半导体封装先导技术研发中心有限公司 Method for electroless copper plating on low-roughness substrate
TWI589203B (en) * 2014-07-15 2017-06-21 Material Concept Inc Electronic parts and methods of making the same
CN112435974A (en) * 2019-02-22 2021-03-02 西安航思半导体有限公司 High strength DFN packaged semiconductor device
TWI710020B (en) * 2019-10-24 2020-11-11 嘉聯益科技股份有限公司 Manufacturing method of flexible circuit board, electroplating solution and etching solution
CN112714554A (en) * 2019-10-24 2021-04-27 嘉联益电子(昆山)有限公司 Manufacturing method of flexible circuit board, electroplating solution and etching solution
TWI732389B (en) * 2019-12-19 2021-07-01 明基材料股份有限公司 A method to optimize atomic layer deposition

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