TW201643655A - Method for producing conductive film for touch panel sensor, conductive film for touch panel sensor, and touch panel - Google Patents

Abstract

The present invention provides a method of manufacturing a conductive film for a touch panel sensor having a transparent electrode, a conductive film for a touch panel sensor, and a touch panel, having excellent adhesion between the transparent electrode and lead-out wiring, and wherein the lead-out wiring exhibits excellent conductive properties. The method for manufacturing a conductive film for a touch panel sensor according to the present invention comprises: a step A for forming, on a substrate, a layer for the formation of a plated layer; a step B for exposing areas, on the layer for formation of a plated layer, where lead-out wiring is to be formed, and forming a patterned plated layer; a step C for forming lead-out wiring on the patterned plated layer; a step D for forming a transparent conductive film on the substrate so as to overlap with at least one end of the lead-out wiring; a step E for forming a resist pattern at predetermined positions on the transparent conductive film; a step F for removing, by an etching process, the transparent conductive film at areas where the resist pattern is not provided, and forming a transparent electrode; and a step G for removing the resist pattern.

Description

Method for manufacturing conductive film for touch panel sensor, conductive film for touch panel sensor, and touch panel

The present invention relates to a method for manufacturing a conductive film for a touch panel sensor, a conductive film for a touch panel sensor, and a conductive film for a touch panel sensor manufactured by the manufacturing method. Control panel.

A conductive film in which a conductive thin wire is disposed on a substrate is used in various applications, and in recent years, with the increase in the mounting rate of a touch panel to a mobile phone and a portable game machine, the touch panel sensor is used. The need for a conductive film is rapidly expanding. Various methods have been proposed for a method of producing a conductive layer that functions as a lead wiring included in a conductive film for a touch panel sensor. For example, Patent Document 1 discloses a method in which an electroless plating catalyst or a precursor thereof is applied to a graft polymer-forming region having an interactive group, and electroless plating is performed to prepare a conductive layer. [Prior Art Document] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2008-207401

[Problems to be Solved by the Invention] In Patent Document 1, the conductive layer can be described as a function of "a traction wire (lead wiring) that connects an electrode (detection electrode) in a touch panel to a driver" However, there is no record related to its specific composition. In addition, a method of electrically connecting the transparent electrode functioning as the detecting electrode to the lead wiring is a method of arranging the transparent electrode so that the transparent electrode is superposed on the end portion of the lead wiring.

Therefore, the present inventors have been able to arrange the transparent electrode and the lead wire functioning as the sensor electrode so that the transparent electrode is superposed on the end portion of the lead wire as described above, with reference to the method described in Patent Document 1. A conductive film for a touch panel sensor is fabricated. Specifically, a lead-through wiring is formed on the substrate, and a transparent conductive film is disposed so as to be superposed on the end portion of the lead-out wiring, and then the transparent conductive film is etched to form a conductive film for a touch panel sensor. At this time, it was found that there was a problem that the resistance value of the lead-out wiring was increased and the conductive characteristics were deteriorated. In addition, when the lead wiring is brought into contact with the transparent electrode to achieve electrical conduction as described above, it is also required to have excellent adhesion between the two.

In view of the above, the present invention has been made in an effort to provide a method for producing a conductive film for a touch panel sensor which is excellent in adhesion between a transparent electrode and a lead-out wiring and which exhibits excellent electrical conductivity characteristics. Further, another object of the present invention is to provide a conductive film for a touch panel sensor manufactured by the above-described manufacturing method, and a touch panel including the conductive film for the touch panel sensor. [Means for solving the problem]

The present inventors have made an effort to study the problems of the prior art, and as a result, have found that the problem can be solved by arranging the resist pattern at the time of forming a transparent electrode at a predetermined position. That is, the inventors of the present invention have found that the above problems can be solved by the following configuration.

(1) A method for producing a conductive film for a touch panel sensor, comprising: a conductive electrode including a substrate, a transparent electrode disposed on the substrate, and a lead-out wiring disposed on the substrate and connected to the transparent electrode; And a method for manufacturing the conductive film for the touch panel sensor, comprising: step A, forming a layer for forming a layer to be plated containing the compound X or the composition Y on the substrate; and step B, for being plated The layer forming layer exposes a region where the lead wiring is to be formed, and removes the unexposed portion of the layer for forming a plating layer to form a patterned plated layer. Step C, plating is applied to the patterned plated layer. The catalyst or its precursor is plated with a patterned plating layer to which a plating catalyst or a precursor thereof is applied, and a lead wiring is formed on the patterned plating layer; Step D is at least overlapped with the lead-out Forming a transparent conductive film on the substrate on one end of the wiring; Step E, forming a photosensitive resist layer on the transparent conductive film to form a region in which the lead wiring is disposed and a region where the transparent electrode is to be formed In the form of a resist pattern, the photosensitive resist layer is exposed, and the exposed photosensitive resist layer is subjected to development processing to form a resist pattern; and step F, the resist is not disposed by etching treatment The transparent conductive film in the patterned region is removed to form a transparent electrode; and in step G, the resist pattern is removed; wherein, the compound X: has a functional group that interacts with the plating catalyst or its precursor, and a polymerizable group Compound, composition Y: a composition containing a compound having a functional group that interacts with a plating catalyst or a precursor thereof, and a compound having a polymerizable group. (2) The method for producing a conductive film for a touch panel sensor according to (1), wherein the plating treatment is an electroless plating treatment. (3) The method for producing a conductive film for a touch panel sensor according to (1), wherein the transparent electrode contains indium tin oxide. (4) The method for producing a conductive film for a touch panel sensor according to any one of (1), wherein the lead wiring includes a group selected from the group consisting of Cu, Au, Ni, and Ag. At least one of them. (5) A touch panel comprising a conductive film for a touch panel sensor manufactured by the manufacturing method according to any one of (1) to (4). [Effects of the Invention]

According to the present invention, it is possible to provide a method for producing a conductive film for a touch panel sensor in which the adhesion between the transparent electrode and the lead wiring is excellent and the lead wire exhibits excellent conductive properties. Further, according to the present invention, a touch panel including a conductive film for a touch panel sensor manufactured by the above manufacturing method can be provided.

Hereinafter, a method of manufacturing the conductive film for a touch panel sensor of the present invention will be described in detail. In addition, the numerical range represented by the "-" in this specification is the range which has the numerical value of the [-- In the first aspect of the present invention, the lead wire is manufactured by a plating process using a patterned plated layer, and one end portion of the lead wire is placed in contact with the transparent electrode. The lead wiring formed by the plating treatment as described above is rougher than the metal layer formed by the vapor phase growth method such as sputtering treatment. Therefore, the adhesion between the lead wire having a rough surface and the transparent electrode is improved. In addition, the present inventors have placed a transparent conductive film so as to form a lead-out wiring on a substrate by plating, and superimposed on the end portion of the lead-out wiring, and then etch the transparent conductive film to manufacture a touch panel. When the conductive film for the sensor was used, the cause of the increase in the resistance value of the lead wiring was investigated. As a result, it has been found that when the transparent conductive film is etched, a part of the lead wiring is sometimes etched. Therefore, before the etching treatment of the transparent conductive film is performed, a resist pattern is disposed on a region where the lead wiring is disposed. By the presence of such a resist pattern, etching of the lead wiring is prevented during the etching process of the transparent conductive film, and as a result, the resistance value of the lead wiring is suppressed from increasing.

1 is a flow chart showing a manufacturing procedure of a preferred embodiment of a method for producing a conductive film for a touch panel sensor according to the present invention. As shown in FIG. 1 , a method for manufacturing a conductive film for a touch panel sensor includes a step A of forming a layer for forming a layer on a substrate (step A for forming a layer for forming a layer) (S102); Step B of forming a patterned plated layer (pattern-formed layer forming step B) (S104); step C of performing a plating process to form lead wires (plating process step C) (S106); forming transparent conductive Step D of the film (transparent conductive film forming step D) (S108); a step E of forming a resist pattern on the transparent conductive film (resist pattern forming step E) (S110); performing etching treatment on the transparent conductive film Step F (etching process step F) (S112); and step G (resist pattern removing step G) of removing the resist pattern (S114). 2A to 8D are views showing a preferred embodiment of a method of manufacturing a conductive film for a touch panel sensor of the present invention in order of steps. Hereinafter, the materials used in the respective steps and the order thereof will be described in detail with reference to the drawings.

<Step A (Step of Forming Layer for Forming Layer to Be Deposited)> Step A is a step of forming a layer for forming a layer to be plated on a substrate, and the layer for forming a layer to be plated contains a compound X or a composition Y to be described later . By performing this step, as shown in FIGS. 2A and 2B, the layer 12 for plating layer formation is formed on the substrate 10 (entire surface). The layer for forming a layer to be plated is a precursor layer for performing a pattern-like exposure treatment to form a patterned layer to be plated. Hereinafter, each member and each material used in the step will be described in detail first, and the order of the steps will be described in detail later.

(Substrate) The substrate is not particularly limited as long as it can support a transparent electrode and a lead-out wiring to be described later, and a known substrate can be used. Further, in the conductive film for a touch panel sensor, the substrate supports the transparent electrode in the central region and supports the lead wiring in the edge region. Examples of the substrate include an insulating substrate, and more specifically, a resin substrate, a ceramic substrate, a glass substrate, and the like. Examples of the material of the resin substrate include polyester resin (polyethylene terephthalate, polyethylene naphthalate), polyether oxime resin, polyacrylic resin, and polyurethane resin. A polycarbonate resin, a polyfluorene-based resin, a polyamine-based resin, a polyarylate-based resin, a polyolefin-based resin, a cellulose-based resin, a polyvinyl chloride-based resin, and a cycloolefin-based resin. The thickness (mm) of the substrate is not particularly limited, and is preferably 0.05 mm to 2 mm, more preferably 0.1 mm to 1 mm, in terms of balance between workability and thickness reduction. Further, the substrate is preferably suitably transmitted with light. Specifically, the total light transmittance of the substrate is preferably from 85% to 100%.

The substrate may also be a substrate surface-treated with a decane coupling agent. That is, a substrate having a layer of a decane coupling agent on its surface can also be used. By using such a substrate, the adhesion between the pattern-formed layer to be described later and the substrate is improved.

(Layer for forming a layer to be plated) The layer for forming a layer to be plated is a layer disposed on the substrate, and is a layer for performing a pattern-like exposure treatment to form a patterned layer to be plated. The layer for forming a plating layer contains at least the following compound X or composition Y. Compound X: a compound composition Y having a functional group (hereinafter also referred to simply as "interactive group") and a polymerizable group which interacts with a plating catalyst or a precursor thereof, and contains a plating catalyst or a precursor thereof The composition of the functional group-interacting compound and the polymerizable group-containing compound will be described below in detail with respect to the material contained in the layer for forming a layer to be plated.

(Compound X) The compound X is a compound having an interactive group and a polymerizable group. The interactive group refers to a functional group that can interact with a plating catalyst or a precursor thereof applied to a patterned layer to be plated. Examples of the interactive group include a functional group capable of forming an electrostatic interaction with a plating catalyst or a precursor thereof, and a nitrogen-containing functional group or a sulfur-containing functional group capable of coordinating with a plating catalyst or a precursor thereof. And oxygen-containing functional groups and the like. More specifically, the interactive group may be exemplified by an amine group, a guanamine group, a guanidino group, a ureido group, a tertiary amino group, an ammonium group, a thiol group, a triazine ring, a triazole ring, a benzotriazole group, or an imidazole group. Base, benzimidazolyl, quinolyl, pyridyl, pyrimidinyl, pyrazinyl, quinazolinyl, quinoxalinyl, fluorenyl, triazinyl, piperidinyl, piperazinyl, pyrrolidinyl, Pyrazolyl, anilino, a group containing an alkylamine structure, a group containing an isocyanuric acid structure, a nitro group, a nitroso group, an azo group, a diazo group, an azide group, a cyano group, and a cyanic acid group a nitrogen-containing functional group such as an ester group; an ether group, a hydroxyl group, a phenolic hydroxyl group, a carboxylic acid group, a carbonate group, a carbonyl group, an ester group, a group having an N-oxide structure, a group having an S-oxide structure, And an oxygen-containing functional group such as a group having an N-hydroxy structure; a thienyl group, a thiol group, a thiourea group, a thiocyanurate group, a benzothiazolyl group, a decyltriazinyl group, a thioether group, a thiol group ( Thioxy), anthracenylene, fluorenyl, sulfite group, a group containing a sulfoximine structure, a group containing a sulfoxinium salt structure, a sulfonic acid a sulfur-containing functional group such as a group and a group containing a sulfonate structure; a phosphorus-containing functional group such as a phosphate group, a phosphonium amino group, a phosphino group, and a group having a phosphate structure; and a chlorine atom and a bromine atom; A group of a halogen atom or the like, a functional group which can take a salt structure, or a salt of such a group can also be used. Among them, in terms of high polarity and high adsorption capacity to a plating catalyst or a precursor thereof, a carboxylic acid group, a sulfonic acid group, a phosphoric acid group, and a boric acid group are preferably polar groups, ether groups or cyanogen groups. More preferably, it is a carboxylic acid group (carboxyl group) or a cyano group. Compound X may also contain two or more kinds of interactive groups.

The polymerizable group is a functional group capable of forming a chemical bond by exposure, and examples thereof include a radical polymerizable group and a cationic polymerizable group. Among them, a radical polymerizable group is preferred in terms of more excellent reactivity. Examples of the radical polymerizable group include an acrylate group (acryloxy group), a methacrylate group (methacryloxy group), an itaconate group, a butenoate group, a methacrylate group, and the like. An unsaturated carboxylate group such as a maleate group, a styryl group, a vinyl group, a acrylamide group, a methacrylamide group or the like. Among them, a methacryloxy group, a propylene methoxy group, a vinyl group, a styryl group, an acrylamide group or a methacrylamide group is preferred, and a methacryloxy group and an acryloxy group are more preferred. Or styryl. The compound X may contain two or more kinds of polymerizable groups. In addition, the number of the polymerizable groups contained in the compound X is not particularly limited, and may be one or two or more.

The compound X may be a low molecular compound or a high molecular compound. The low molecular compound means a compound having a molecular weight of less than 1,000, and the polymer compound means a compound having a molecular weight of 1,000 or more. Further, the low molecular compound having the polymerizable group corresponds to a so-called monomer (single amount). Further, the polymer compound may be a polymer having a predetermined repeating unit. Further, the compounds may be used alone or in combination of two or more.

In the case where the compound X is a polymer, the weight average molecular weight of the polymer is not particularly limited, and from the viewpoint of more excellent workability such as solubility, it is preferably 1,000 or more and 700,000 or less, more preferably 2000. Above 200,000. In particular, in terms of polymerization sensitivity, it is preferably 20,000 or more. The method for synthesizing the polymer having a polymerizable group and an interactive group is not particularly limited, and a known synthesis method can be used (refer to paragraph [0097] to paragraph [0125] of Japanese Patent Laid-Open Publication No. 2009-280905).

(Preferred Aspect 1 of the Polymer) In the case where the compound X is a polymer, the first preferred aspect of the polymer may include a repeat having a polymerizable group represented by the following formula (a) A copolymer of a unit (hereinafter also referred to as a polymerizable group unit as appropriate) and a repeating unit having an interactive group represented by the following formula (b) (hereinafter also referred to as an interactive group unit as appropriate).

[Chemical 1]

In the formulae (a) and (b), R ¹ to R ⁵ each independently represent a hydrogen atom or a substituted or unsubstituted alkyl group (e.g., methyl group, ethyl group, propyl group, butyl group, etc.). In addition, the type of the substituent is not particularly limited, and examples thereof include a methoxy group, a chlorine atom, a bromine atom, and a fluorine atom. Further, R ^{1 is} preferably a hydrogen atom, a methyl group or a methyl group substituted with a bromine atom. R ^{2 is} preferably a hydrogen atom, a methyl group or a methyl group substituted with a bromine atom. R ^{3 is} preferably a hydrogen atom. R ^{4 is} preferably a hydrogen atom. R ^{5 is} preferably a hydrogen atom, a methyl group or a methyl group substituted with a bromine atom.

In the formulae (a) and (b), X, Y and Z each independently represent a single bond or a substituted or unsubstituted divalent organic group. The divalent organic group may, for example, be a substituted or unsubstituted divalent aliphatic hydrocarbon group (preferably having a carbon number of 1 to 8. for example, an alkylene group such as a methylene group, an ethyl group and a propyl group), substituted or Unsubstituted divalent aromatic hydrocarbon group (preferably having a carbon number of 6 to 12, such as a phenyl group), -O-, -S-, -SO ₂ -, -N(R)-(R:alkyl) , -CO-, -NH-, -COO-, -CONH-, and a group in which the groups are combined (for example, an alkoxy group, an alkyloxycarbonyl group, an alkylcarbonyloxy group, etc.) Wait.

X, Y, and Z are preferably a single bond, an ester group (-COO-), or a guanamine group, in terms of being easy to synthesize a polymer and having excellent adhesion between the pattern-formed layer and the lead wiring. CONH-), an ether group (-O-) or a substituted or unsubstituted divalent aromatic hydrocarbon group, more preferably a single bond, an ester group (-COO-) or a decylamino group (-CONH-).

In the formulae (a) and (b), L ¹ and L ² each independently represent a single bond or a substituted or unsubstituted divalent organic group. The definition of the divalent organic group has the same meaning as the divalent organic group described in X, Y and Z described above. L ^{1 is} preferably an aliphatic hydrocarbon group or a divalent organic compound having a urethane bond or a urea bond, insofar as it is easy to synthesize a polymer and the adhesion between the patterned plated layer and the lead wire is more excellent. The group (for example, an aliphatic hydrocarbon group) is more preferably a group having a total carbon number of 1 to 9. Here, the total carbon number of L ¹ herein means the total number of carbon atoms contained in the substituted or unsubstituted divalent organic group represented by L ¹ .

In addition, L ^{2 is} preferably a single bond or a divalent aliphatic hydrocarbon group, a divalent aromatic hydrocarbon group, or a combination of these groups, in terms of excellent adhesion between the pattern-formed layer and the lead-out wiring. a group. Among them, L ^{2 is} preferably a single bond or a total carbon number of from 1 to 15. Here, the total carbon number of L ² herein means the total number of carbon atoms contained in the substituted or unsubstituted divalent organic group represented by L ² . Further, the divalent organic group represented by L ₂ is preferably unsubstituted.

In the formula (b), W represents an interactive group. The definition of the interactive group is as described above.

In terms of reactivity (hardenability, polymerizability) and inhibition of gelation at the time of synthesis, the content of the polymerizable group unit is preferably 5 mol% (mole) with respect to all the repeating units in the polymer. Percentage) ~ 50 mol%, more preferably 5 mol% to 40 mol%. Further, in terms of the adsorption property of the plating catalyst or its precursor, the content of the interactive group unit is preferably from 5 mol% to 95 mol% with respect to all the repeating units in the polymer. More preferably, it is 10 mol% to 95 mol%.

(Preferred Aspect 2 of the Polymer) In the case where the compound X is a polymer, the second preferred aspect of the polymer may include the following formula (A), formula (B) and formula (C). The copolymer of the repeating unit represented.

[Chemical 2]

The repeating unit represented by the formula (A) is the same as the repeating unit represented by the formula (a), and the description of each group is also the same. Repeating unit represented by formula (B) repeating units represented by R ^5, X, and L ² in the formula (b) in R ^5, X ² and L is the same, indicating that each of the groups are also the same. Wa in the formula (B) represents a group which interacts with a plating catalyst or a precursor thereof other than the hydrophilic group represented by V described later or a precursor thereof. Among them, a cyano group or an ether group is preferred.

In the formula (C), R ⁶ each independently represents a hydrogen atom or a substituted or unsubstituted alkyl group. In the formula (C), U represents a single bond or a substituted or unsubstituted divalent organic group. The definition of the divalent organic group has the same meaning as the divalent organic group represented by X, Y and Z described above. In terms of being easy to synthesize a polymer and having excellent adhesion between the pattern-formed layer and the lead wiring, U is preferably a single bond, an ester group (-COO-) or a guanamine group (-CONH-). An ether group (-O-) or a substituted or unsubstituted divalent aromatic hydrocarbon group. In the formula (C), L ³ represents a single bond or a substituted or unsubstituted divalent organic group. The definition of the divalent organic group has the same meaning as the divalent organic group represented by L ¹ and L ² described above. L ^{3 is} preferably a single bond or a divalent aliphatic hydrocarbon group, a divalent aromatic hydrocarbon group, or the like, insofar as it is easy to synthesize a polymer and the adhesion between the patterned plated layer and the lead wire is more excellent. A group composed of groups.

In the formula (C), V represents a hydrophilic group or a precursor thereof. The hydrophilic group is not particularly limited as long as it is a group exhibiting hydrophilicity, and examples thereof include a hydroxyl group and a carboxylic acid group. Further, the precursor group of the hydrophilic group means a group which generates a hydrophilic group by a predetermined treatment (for example, treatment with an acid or a base), and examples thereof include 2-tetrahydropyranyl group (2). -tetrahydropyranyl, THP) protected carboxylic acid groups and the like. The hydrophilic group is preferably an ionic polar group in terms of interaction with the plating catalyst or its precursor. Specific examples of the ionic polar group include a carboxylic acid group, a sulfonic acid group, a phosphoric acid group, and a boronic acid group. Among them, a carboxylic acid group is preferred in terms of moderate acidity (no decomposition of other functional groups) and the like.

The preferred content of each unit of the second preferred aspect of the polymer is as follows. The content of the repeating unit represented by the formula (A) is preferably 5 mol% with respect to all the repeating units in the polymer in terms of reactivity (hardenability, polymerizability) and inhibition of gelation at the time of synthesis. ～50 mol%, more preferably 5 mol% to 30 mol%. In terms of adsorption to the plating catalyst or its precursor, the content of the repeating unit represented by the formula (B) is preferably from 5 mol% to 75 mol%, based on all the repeating units in the polymer. More preferably, it is 10 mol% to 70 mol%. The content of the repeating unit represented by the formula (C) is preferably from 10 mol% to 70 mol%, more preferably in terms of developability of the aqueous solution and wet adhesion resistance, with respect to all the repeating units in the polymer. It is 20 mol% to 60 mol%, and further preferably 30 mol% to 50 mol%.

Specific examples of the polymer include, for example, a polymer described in paragraphs [0106] to [0112] of JP-A-2009-007540, and paragraph [0065] of JP-A-2006-135271. The polymer described in the paragraph [0070], the polymer described in paragraph [0030] to [0108] of US2010-080964. The polymer can be produced by a known method such as the method in the cited literature.

(Preferred aspect of the monomer) When the compound is a so-called monomer, a preferred embodiment of the monomer may be a compound represented by the formula (X).

[Chemical 3] Formula (X)

In the formula (X), R ¹¹ to R ¹³ each independently represent a hydrogen atom or a substituted or unsubstituted alkyl group. Examples of the unsubstituted alkyl group include a methyl group, an ethyl group, a propyl group, and a butyl group. Further, the substituted alkyl group may, for example, be a methyl group, an ethyl group, a propyl group or a butyl group substituted with a methoxy group, a chlorine atom, a bromine atom or a fluorine atom. Further, R ^{11 is} preferably a hydrogen atom or a methyl group. R ^{12 is} preferably a hydrogen atom. R ^{13 is} preferably a hydrogen atom.

L ¹⁰ represents a single bond or a divalent organic group. The divalent organic group may, for example, be a substituted or unsubstituted aliphatic hydrocarbon group (preferably having 1 to 8 carbon atoms), a substituted or unsubstituted aromatic hydrocarbon group (preferably having a carbon number of 6 to 12), O-, -S-, -SO ₂ -, -N(R)-(R:alkyl), -CO-, -NH-, -COO-, -CONH-, and combinations of these groups a group (for example, an alkoxy group, an alkoxycarbonyl group, an alkylcarbonyloxy group, etc.), and the like. The substituted or unsubstituted aliphatic hydrocarbon group is preferably a methylene group, an ethyl group, a propyl group or a butyl group, or the groups are substituted by a methoxy group, a chlorine atom, a bromine atom or a fluorine atom. a group. The substituted or unsubstituted aromatic hydrocarbon group is preferably an unsubstituted phenyl group or a phenyl group substituted by a methoxy group, a chlorine atom, a bromine atom or a fluorine atom. In the formula (X), a preferred aspect of L ¹⁰ may be -NH-aliphatic hydrocarbon group or -CO-aliphatic hydrocarbon group-.

The definition of W has the same meaning as the definition of W in the formula (b), and represents an interactive group. In the formula (X), preferred examples of W include an ionic polar group, and more preferably a carboxylic acid group.

(Composition Y) The composition Y is a composition containing a compound having an interactive group and a compound having a polymerizable group. In other words, the layer for forming a layer to be plated contains both a compound having an interactive group and a compound having a polymerizable group. The definition of the interactive group and the polymerizable group is as described above. The compound having an interactive group is a compound having an interactive group. The definition of an interactive group is as described above. Such a compound may be a low molecular compound or a high molecular compound. Preferred examples of the compound having an interactive group include a polymer (for example, polyacrylic acid) having a repeating unit represented by the above formula (b). Further, the compound having an interactive group does not contain a polymerizable group. The compound having a polymerizable group is a so-called monomer, and a polyfunctional monomer having two or more polymerizable groups is preferred because the hardness of the layer to be formed is more excellent. The polyfunctional monomer is specifically preferably a monomer having two to six polymerizable groups. The molecular weight of the polyfunctional monomer to be used is preferably from 150 to 1,000, more preferably from 200 to 700, from the viewpoint of the mobility of the molecule in the crosslinking reaction which affects the reactivity. Further, the interval (distance) between the plurality of polymerizable groups is preferably from 1 to 15, more preferably from 6 to 10, in terms of the number of atoms. The compound having a polymerizable group may further contain an interactive group. Further, the mass ratio of the compound having an interactive group to the compound having a polymerizable group (the mass of the compound having an interactive group / the mass of the compound having a polymerizable group) is not particularly limited, and the formed The balance of the strength of the plating layer and the plating suitability is preferably from 0.1 to 10, more preferably from 0.5 to 5.

The content of the compound X (or the composition Y) in the layer for forming a layer to be plated is not particularly limited, and is preferably 50% by mass or more, and more preferably 80% by mass based on the total mass of the layer for forming a layer to be plated. the above. The upper limit is not particularly limited, but is preferably 99.5 mass% or less.

The layer for forming a layer to be plated may further contain the compound X and components other than the composition Y. The layer for forming a layer to be plated may also contain a polymerization initiator. The reaction between the polymerizable groups at the time of exposure treatment is more efficiently carried out by containing a polymerization initiator. The polymerization initiator is not particularly limited, and a known polymerization initiator (so-called photopolymerization initiator) or the like can be used. Examples of the polymerization initiators include benzophenones, acetophenones, α-aminoalkylphenones, benzoin, ketones, thioxanthones, benzophenes, and benzoin contractions. Ketones, oxime esters, anthrones, tetramethylthiuram monosulfide, bis-decylphosphine oxides, mercaptophosphine oxides, anthraquinones and azo compounds, etc. Things. The content of the polymerization initiator in the layer for forming a layer to be plated is not particularly limited, and is preferably 0.01 by mass with respect to the total mass of the layer for forming a layer to be plated. % to 1% by mass, more preferably 0.1% by mass to 0.5% by mass.

In the layer for forming a plating layer, other additives may be added as needed (for example, a sensitizer, a hardener, a polymerization inhibitor, an antioxidant, an antistatic agent, a filler, a particle, a flame retardant, a surfactant, a lubricant) And plasticizers, etc.).

The thickness of the layer for forming a layer to be plated is not particularly limited, but is preferably 0.01 μm to 20 μm, more preferably 0.1 μm to 10 μm, still more preferably 0.1 μm to 5 μm. The thickness of the layer for forming a layer to be plated is an average thickness, and is a value obtained by measuring the thickness of any 10 points of the layer for forming a layer to be plated and arithmetically averaging them.

(Step of Step) The method of forming the layer for forming a layer to be plated on the substrate is not particularly limited, and a composition including the above-described various components is applied onto the substrate to form a layer to be plated. A method of forming a layer (coating method); a method of forming a layer for forming a layer to be plated on a temporary substrate, and transferring the layer to a substrate (transfer method). Among them, in terms of easy control of the thickness, a coating method is preferred. Hereinafter, the aspect of the coating method will be described in detail.

The composition used in the coating method contains at least the compound X or the composition Y described above. Other ingredients (such as a polymerization initiator) as described above may also be contained as needed. Further, in the composition, it is preferred to contain a solvent in terms of workability. The solvent to be used is not particularly limited, and examples thereof include water, an alcohol solvent, a ketone solvent, a guanamine solvent, a nitrile solvent, an ester solvent, a carbonate solvent, an ether solvent, and a glycol solvent. An amine solvent, a thiol solvent, a halogen solvent, or the like. The content of the solvent in the composition is not particularly limited, and is preferably 50% by mass to 98% by mass, and more preferably 70% by mass to 95% by mass based on the total amount of the composition. When it is in the above range, the workability of the composition is excellent, and it is easy to control the layer thickness of the layer for forming a layer to be plated.

In the case of the coating method, the method of applying the composition onto the substrate is not particularly limited, and a known method (for example, spin coating, die coating, dip coating, or the like) can be used. In terms of operability and production efficiency, it is preferred that the composition is applied onto a substrate, and if necessary, drying is performed to remove the solvent remaining in the coating film to form a layer for forming a layer to be plated. . In addition, the conditions of the drying treatment are not particularly limited, and in terms of more excellent productivity, it is preferably carried out at room temperature to 220 ° C (preferably 50 ° C to 120 ° C) for 1 minute to 30 minutes (compared Good for 1 minute to 10 minutes).

<Step B (Pattern-formed layer forming step B)> Step B is a layer for forming a layer to be plated, and a region where a lead wiring is to be formed (a region where lead wires are to be formed) is exposed, and a layer to be plated is applied. The step of removing the unexposed portion in the formation layer to form a patterned plated layer. As described above, the lead wiring is disposed on the pattern-coated layer by performing a plating process. Therefore, in this step, as shown in FIG. 3A and FIG. 3B, the pattern-formed layer 14 is formed in a region where the lead wiring is to be formed by a plating process which will be described later. In addition, in FIG. 3A, five patterns of the plated layer 14 are formed, but the number of the layers is not particularly limited. More specifically, the predetermined region (the region where the lead wiring is to be formed) of the layer for forming a layer to be plated is exposed, whereby polymerization between the polymerizable groups and reaction between the substrate and the polymerizable group are performed in the exposed region. The exposed layer for forming a layer to be exposed is hardened to form an insoluble portion. This insoluble portion is a so-called patterned plated layer. Then, the unexposed portion (the portion not subjected to light irradiation (exposure treatment)) of the layer for forming a plating layer is removed, thereby forming a patterned plated layer. Hereinafter, the method of the exposure processing will be described in detail first, and then the removal processing of the unexposed portion will be described in detail.

In the exposure treatment (light irradiation treatment), exposure under light of an optimum wavelength is performed in accordance with the material of the layer to be plated layer to be used. For example, ultraviolet light (Ultraviolet (UV) lamps, light rays such as visible light rays, etc., can be used. Examples of the light source include a mercury lamp, a metal halide lamp, a xenon lamp, a chemical lamp, and a carbon arc lamp. Further, an electron beam, an X-ray, an ion beam, a far infrared ray or the like can also be used. The exposure time varies depending on the reactivity of the material of the layer for forming a plating layer and the light source, and is usually a period of from 10 seconds to 5 hours. The exposure energy may be about 10 mJ to 8000 mJ, preferably 50 mJ to 3000 mJ. Further, the method of performing the exposure treatment in a pattern is not particularly limited, and a known method can be employed. For example, it is only necessary to irradiate the layer for forming a layer to be plated with exposure light through a mask having a predetermined opening.

As described above, the region where the exposure is performed is a region where the lead wiring needs to be formed. The region where the lead wiring is to be formed is a predetermined region in which the lead wiring is formed (a region where the lead wiring needs to be formed when viewed from the normal direction of the substrate), and the layer for forming a layer to be plated located in the region is subjected to exposure processing. That is, when viewed from the normal direction of the substrate, the predetermined region where the lead wiring is formed coincides with the position of the exposure region. In addition, in this specification, "consistent" means not only the same, but also an experimental error (offset) (in other words, it may be substantially the same). Usually, in most cases, the lead wiring is formed in an edge region of the substrate, and the exposure region is also located in the edge region. Further, the edge region is a region extending from the outer edge of the substrate toward the center side and close to the outer edge.

Then, the unexposed portion of the layer for forming a plating layer is removed to form a patterned plated layer. The method of removing the unexposed portion is not particularly limited, and a method of bringing the solvent for dissolving the layer for forming a layer to be plated into contact with the layer for forming a layer to be plated is mentioned. More specifically, a method of using an alkaline solution as a developing solution can be cited. In the case where the unexposed portion is removed using an alkaline solution, a method of immersing a substrate having a layer for forming a layer to be plated subjected to exposure treatment in an alkaline solution (immersion method); and A method (coating method) or the like for applying an alkaline solution on the layer for forming a plating layer is preferably a dipping method. In the case of the immersion method, the immersion time is preferably from about 1 minute to 30 minutes in terms of productivity and workability.

<Step C (Plating Treatment Step C)> Step C is to apply a plating catalyst or a precursor to the patterned plating layer, and to apply a patterned plating layer to which a plating catalyst or a precursor thereof is applied. The plating treatment is a step of forming lead wires on the patterned layer to be plated. By performing this step, as shown in FIGS. 4A and 4B, the lead wiring 16 is formed on the pattern-formed layer 14. The lead wiring includes a metal layer formed by a plating process. Further, the one end portion of the lead wire 16 on the side connected to the transparent electrode has a T-shape, but is not limited to this. Hereinafter, the step of applying a plating catalyst or a precursor to the patterned plating layer (step X) and plating the patterned plating layer to which the plating catalyst or its precursor is applied are performed. The steps (step Y) are explained.

(Step X: Plating Catalyst Supplying Step) In this step, first, a plating catalyst or a precursor thereof is applied to the patterned coating layer. The interacting group derived from the compound X or the composition Y adheres (adsorbs) the plating catalyst or its precursor depending on its function. More specifically, a plating catalyst or a precursor thereof is applied to the surface of the patterned coating layer. The plating catalyst or its precursor functions as a catalyst and an electrode for the plating treatment. Therefore, the type of the plating catalyst or its precursor to be used is appropriately determined depending on the type of the plating treatment. Furthermore, the plating catalyst or precursor thereof used is preferably an electroless plating catalyst or a precursor thereof. Hereinafter, the electroless plating catalyst or its precursor will be mainly described in detail.

The electroless plating catalyst used in this step may be any electroless plating catalyst as long as it becomes an active core during electroless plating. Specific examples thereof include a metal having a catalyst capable of self-catalytic reduction reaction (a metal known as an electroless metal which is less likely to be ionized than Ni). More specifically, Pd, Ag, Cu, Ni, Pt, Au, Co, etc. are mentioned. Among them, in terms of high catalyst capacity, Ag, Pd, Pt or Cu is preferred. The electroless plating catalyst can also use a metal colloid. The electroless plating catalyst precursor used in this step is not particularly limited as long as it can be an electroless plating catalyst by a chemical reaction. Metal ions of the metals exemplified as the electroless plating catalyst can be mainly used. The metal ions which are precursors of the electroless plating catalyst become a zero-valent metal which is an electroless plating catalyst by a reduction reaction. It is also possible to apply a metal ion as a precursor of the electroless plating catalyst to the patterned plating layer, and then change the electroless plating catalyst precursor to zero before the immersion in the electroless plating bath. Metal, made of electroless plating catalyst. In addition, the electroless plating precursor can be kept immersed in the electroless plating bath, and the electroless plating precursor can be changed to metal by the reducing agent in the electroless plating bath (electroless plating) Media).

The metal ion as the precursor of the electroless plating catalyst is preferably applied to the patterned layer to be plated using a metal salt. The metal salt to be used is not particularly limited as long as it is dissolved in a suitable solvent to be dissociated into a metal ion and a base (anion), and examples thereof include M(NO ₃ ) _n , MCl _n , and M _2/n (SO ₄ ). And M _3/n (PO ₄ ) (M represents an n-valent metal atom) or the like. Metal ions can preferably be used to dissociate the resulting ions using the metal salt. For example, Ag ion, Cu ion, Ni ion, Co ion, Pt ion, and Pd ion are mentioned. Among them, metal ions capable of multidentate coordination are preferable, and in particular, Ag ions, Pd ions, or Cu ions are preferable in terms of the number of kinds of functional groups that can be coordinated and the catalytic ability. In this step, a zero-valent metal may also be used as a catalyst for directly performing electroplating without electroless plating.

A method of applying a plating catalyst or a precursor to a patterned plating layer, for example, preparing a solution obtained by dispersing or dissolving a plating catalyst or a precursor thereof in a suitable solvent, and coating the solution The substrate may be coated on the patterned layer or the substrate having the patterned layer to be plated may be immersed in the solution. As the solvent, water or an organic solvent can be suitably used.

The concentration of the plating catalyst or its precursor in the solution is not particularly limited, but is preferably 0.001% by mass to 50% by mass, and more preferably 0.005% by mass to 30% by mass. Further, the contact time is preferably from about 30 seconds to about 24 hours, more preferably from about 1 minute to about 1 hour.

The amount of adsorption of the plating catalyst or the precursor of the patterned coating layer depends on the type of plating bath used, the type of catalyst metal, the type of interaction layer of the patterned coating layer, and the method of use. The difference is preferably from 5 mg/m ² to 1000 mg/m ² , more preferably from 10 mg/m ² to 800 mg/m ² , and even more preferably 20 mg/min, in terms of the precipitation property of the plating. m ² to 600 mg/m ² .

(Step Y: Plating Treatment Step) Next, the plating layer to be plated to which the plating catalyst or its precursor is applied is subjected to a plating treatment. The method of the plating treatment is not particularly limited, and examples thereof include an electroless plating treatment or a plating treatment (electrolytic plating treatment). In this step, the electroless plating treatment may be separately performed, or the electroplating treatment may be further performed after the electroless plating treatment. Hereinafter, the order of the electroless plating treatment and the plating treatment will be described in detail.

The electroless plating treatment refers to an operation of depositing a metal by a chemical reaction using a solution in which a metal ion to be deposited as a plating is dissolved. The electroless plating in this step is preferably carried out by, for example, washing a substrate having a patterned plated layer to which an electroplating catalyst is applied, and removing excess electroless plating catalyst (metal). The water-washed substrate was immersed in an electroless plating bath. A well-known electroless plating bath can be used for the electroless plating bath used. In addition, the substrate having the patterned plated layer to which the electroless plating catalyst precursor is applied is immersed in the electroless plating bath in a state in which the electroless plating catalyst precursor is adsorbed or impregnated in the pattern-like layer to be plated. In the case of washing, the substrate is washed with water to remove excess electroless plating catalyst precursor (metal salt or the like), and then the water-washed substrate is immersed in an electroless plating bath. In this case, the reduction of the electroless plating catalyst precursor and the subsequent electroless plating are carried out in an electroless plating bath. Here, the electroless plating bath used can be used in the same manner as described above using a known electroless plating bath. Further, the reduction of the electroless plating catalyst precursor may be different from the above-described use of the electroless plating solution, and the catalyst activation liquid (reducing liquid) may be prepared and used as another step before the electroless plating. get on.

The composition of the usual electroless plating bath contains, in addition to a solvent (for example, water), a metal ion for plating, a reducing agent, and an additive (stabilizer) for improving the stability of metal ions. In addition to these components, the plating bath may contain a known additive such as a stabilizer of a plating bath. The organic solvent used in the electroless plating bath is preferably a water-soluble solvent, more preferably a ketone such as acetone or an alcohol such as methanol, ethanol or isopropyl alcohol. Regarding the kind of metal used in the electroless plating bath, copper, tin, lead, nickel, gold, silver, palladium, and ruthenium are known, and among them, copper, silver or gold is preferable in terms of conductivity. More preferably copper. Further, an optimum reducing agent and an additive are selected depending on the metal. The immersion time in the electroless plating bath is preferably from about 1 minute to about 6 hours, more preferably from about 1 minute to about 3 hours.

In this step, when the plating catalyst or the precursor thereof applied to the patterned layer to be plated has a function as an electrode, the pattern to which the catalyst or its precursor is applied may be plated. The layers are plated. Further, as described above, in this step, after the electroless plating treatment, plating treatment may be performed as needed. In such an aspect, the thickness of the formed lead wires can be appropriately adjusted. The method of electroplating can use a conventionally known method. Further, examples of the metal used for the plating include copper, chromium, lead, nickel, gold, silver, tin, zinc, and the like. From the viewpoint of conductivity, copper, gold or silver is preferable, and copper is more preferable.

The thickness of the lead wiring produced by the above procedure is not particularly limited, but is preferably 0.01 μm to 20 μm, more preferably 0.1 μm to 10 μm, still more preferably 0.1 μm to 5 μm. The thickness of the lead wires is an average thickness, and is a value obtained by measuring the thickness of any 10 points of the lead wires and arithmetically averaging them.

<Step D (Transparent Conductive Film Forming Step D)> Step D is a step of forming a transparent conductive film on the substrate so as to overlap at least one end portion of the lead wiring. 5A and 5B, a state in which the transparent conductive film 18 is disposed on the entire surface of the substrate 10 is shown. That is, in FIGS. 5A and 5B, the transparent conductive film 18 is disposed on the substrate 10 and on the lead wiring 16.

The constituent material of the transparent conductive film is not particularly limited, and examples thereof include those selected from the group consisting of indium, tin, zinc, gallium, germanium, titanium, lanthanum, zirconium, magnesium, aluminum, gold, silver, copper, palladium, tungsten, and cadmium. a metal oxide of at least one metal in the group. The metal oxide is preferably, for example, Indium Tin Oxide (ITO), Antimony Tin Oxide (ATO), ZnO, SnO, or Cadmium Tin Oxide (CTO), and more preferably ITO. ITO preferably contains 80% by mass to 99% by mass of indium oxide and 1% by mass to 20% by mass of tin oxide. The thickness of the transparent conductive film is not particularly limited, and is usually from 10 nm to 200 nm in many cases, and preferably from 15 nm to 40 nm, and more preferably from 20 nm to 30 nm in terms of a film.

The method for producing the transparent conductive film is not particularly limited, and examples thereof include known methods such as a vacuum vapor deposition method, a physical vapor deposition method such as sputtering, and a chemical vapor deposition method such as a chemical vapor deposition (CVD) method. Film formation method.

<Step E (Resist Pattern Formation Step E)> This step is to form a photosensitive resist layer on the transparent conductive film to form a resist in a region where the lead wiring is disposed and a region where a transparent electrode is to be formed. In the form of a pattern, the photosensitive resist layer is exposed, and the exposed photosensitive resist layer is subjected to development processing to form a resist pattern. By performing this step, a resist pattern is formed at a predetermined position on the transparent conductive film. More specifically, as shown in FIGS. 6A to 6C , a resist pattern 20 including a first resist pattern 20A disposed in a region where the lead wiring 16 is disposed, and a resist pattern 20 are disposed. The second resist pattern 20B in the region where the transparent electrode is to be formed. In addition, the first resist pattern 20A is disposed so as to be aligned with the lead wiring 16 when viewed from the normal direction of the substrate 10. In addition, the second resist pattern 20B is disposed so as to be aligned with a region where a transparent electrode is to be formed when viewed from the normal direction of the substrate 10. In addition, the area in which the transparent electrode is to be formed refers to a predetermined region in which the transparent electrode is formed (a region in which a transparent electrode is to be formed when viewed from the normal direction of the substrate). Hereinafter, the step of forming a photosensitive resist layer on the transparent conductive film (step Z) and the step of forming a resist pattern (step W) will be described. In the present specification, the photosensitive resist layer refers to a layer which is photosensitive and hardened by light of a predetermined wavelength, and the resist pattern refers to a pattern-like film obtained by curing the photosensitive resist layer.

(Step Z) Step Z is a step of forming a photosensitive resist layer on the transparent conductive film. The method for producing the photosensitive resist layer is not particularly limited, and a known method can be used. For example, a method of providing a photosensitive resist layer by laminating a dry film resist on a transparent conductive film; and applying a photosensitive liquid resist to a transparent conductive film to provide photosensitivity A method of resist layer. The photosensitive resist layer may be a positive photosensitive resist layer or a negative photosensitive resist layer, and more preferably a negative photosensitive resist layer.

The material of the photosensitive resist layer used in this step is not particularly limited, and a known material can be used. For example, it is preferable that the negative-type photosensitive resist layer can be dissolved and removed by a water-based developing solution containing an alkaline aqueous solution as a main component, which is exposed to light and insoluble. The film thickness of the photosensitive resist layer is preferably 10 μm or less, more preferably 5 μm or less, and still more preferably 3 μm or less. In order to ensure the necessary resist performance and to apply the photosensitive liquid resist uniformly and without defects, the lower limit of the film thickness is preferably 0.5 μm or more.

When a photosensitive resist layer is applied to apply a photosensitive liquid resist, the coating method may be, for example, dip coating, slip coating, curtain coating, bar coating, or air knife coating. , quantitative coating methods such as roll coating, gravure coating, and spray coating.

(Step W) In the step W, the photosensitive resist layer is exposed to form a resist pattern in a region where the lead wiring is disposed and a region where the transparent electrode is to be formed, and the photosensitive resist layer is developed. Processing, the step of forming a resist pattern. The order of this step is not particularly limited as long as the resist pattern is disposed in a predetermined region (a region where the lead wiring is disposed and a region where the transparent electrode is to be formed). That is, as long as the substrate is observed from the normal direction, the region having the resist pattern, the region in which the lead wiring is disposed, and the region where the transparent electrode is to be formed may be any method. For example, when a negative photosensitive resist layer is used as the photosensitive resist layer, the photosensitive resist layer is exposed by interposing a mask having an opening portion for exposing the predetermined region. can. In the case where a positive photosensitive resist layer is used as the photosensitive resist layer, a photosensitive resist layer is interposed so as to interpose a mask having an opening portion in which the predetermined region is an unexposed portion. Just expose it. The type of the light-sensitive photosensitive resist layer used for the exposure differs, and the light exemplified in the above-described step B can be mentioned.

After the exposure treatment, the photosensitive resist layer is subjected to development processing. When the photosensitive resist layer is a negative photosensitive resist layer, the unexposed portion is removed by performing development processing, and when the photosensitive resist layer is a positive photosensitive resist layer. The exposure portion is removed by performing development processing. The method of the development treatment may be a known method, and examples thereof include a method in which an exposed photosensitive resist layer is brought into contact with an alkaline developer to develop.

<Step F (etching treatment step F)> Step F is a step of removing the transparent conductive film in the region where the resist pattern is not disposed by etching to form a transparent electrode. By performing this step, as shown in FIGS. 7A to 7D, the transparent conductive film other than the region in which the resist pattern 20 is disposed is removed, and the transparent electrode 22 is formed on the substrate 10 to take out the wiring 16 and the resist pattern. A wiring-like transparent conductive film 24 is formed between 20A. That is, in FIG. 7A, the transparent conductive film remains only on the lower side (substrate side) of the region having the resist pattern 20. The transparent electrode 22 is disposed on the substrate 10 and is electrically connected to the lead wiring 16 and the wiring-shaped transparent conductive film 24. Furthermore, the transparent electrode 22 functions as a sensor electrode in the touch panel sensor. Moreover, the wiring-shaped transparent conductive film 24 is disposed on the lead wiring 16, and the shape of the wiring-shaped transparent conductive film 24 has the same shape as the lead wiring 16. In other words, the shape of the wiring-shaped transparent conductive film 24 on the lead wiring 16 is the same as the shape of the lead wiring 16 when viewed in the normal direction of the substrate 10.

The method of etching the transparent conductive film is not particularly limited, and a known method can be employed, and can be carried out, for example, by bringing a known etching liquid into contact with the transparent conductive film.

<Step G (Resist Pattern Removal Step G)> Step G is a step of removing the resist pattern. By performing this step, the conductive film 100 for a touch panel sensor is formed as shown in FIGS. 8A to 8D. The conductive film 100 for a touch panel sensor includes a substrate 10 and is transparently disposed on the substrate 10. The electrode 22 and the lead wiring 16 disposed on the substrate and electrically connected to the transparent electrode 22 and disposed around the region where the transparent electrode 22 is formed are provided. Further, a wiring-shaped transparent conductive film 24 connected to the end of the transparent electrode 22 is disposed on the lead wiring 16.

The method of removing the resist pattern is not particularly limited, and a known method can be employed. For example, a method of bringing a known resist stripping solution into contact with a resist pattern can be mentioned.

<Electrically Conductive Film for Touch Panel Sensor> Through the above steps, a predetermined conductive film for a touch panel sensor is formed. The conductive film 100 for a touch panel sensor includes a substrate 10, a plurality of transparent electrodes 22 disposed in a central region of the substrate 10, and an edge region disposed outside the central region of the substrate and electrically connected to the transparent electrode 22. A plurality of lead wires 16 are drawn. The lead wires 16 are disposed on the patterned plated layer 14. Further, one end side of the transparent electrode 22 is located on the substrate 10, and the other end side is electrically connected to the lead wiring 16. A wiring-shaped transparent conductive film 24 is disposed on the lead wiring 16 , and the wiring-shaped transparent conductive film 24 is disposed in the same pattern as the lead wiring 16 .

The conductive film for the touch panel sensor of the present invention can be preferably used to manufacture a touch panel sensor. The conductive film for the touch panel sensor may further have a printed wiring substrate. In addition, in the present specification, a touch panel sensor formed of the conductive film for the touch panel sensor is combined with various display devices (for example, a liquid crystal display device or an organic electroluminescence display device), and combined The resulting item is called a touch panel. The touch panel can preferably be a so-called electrostatic capacitive touch panel.

2A to 8D, the description has been made on a case where only a transparent electrode and a lead wiring are disposed on one surface of the substrate, but the above treatment may be performed on both surfaces of the substrate, and transparent electrodes may be disposed on both surfaces of the substrate. And lead wiring.

<Modification of the preferred embodiment> In the step D (transparent conductive film forming step D) of the preferred embodiment, the transparent conductive film 18 is formed on the entire surface of the substrate 10, but is not limited to this aspect, and is transparent. The conductive film 18 may be superposed on one end portion of the lead wiring 16 . For example, as shown in FIGS. 9A and 9B , the transparent conductive film 18 may be disposed only in the central region of the substrate 10 . In such a case, in the conductive film for a touch panel sensor obtained, a wiring-like transparent conductive film is disposed only on one end portion of the lead wiring. [Examples]

Hereinafter, the present invention will be described in more detail by way of examples, but the invention is not limited thereto.

(Synthesis Example 1: Polymer 1) 1 L of ethyl acetate and 159 g of 2-aminoethanol were placed in a 2 L three-necked flask, and the three-necked flask was cooled in an ice bath. In a solution in a three-necked flask, 150 g of 2-bromoisobutylphosphonium bromide was adjusted and dropwise added so that the internal temperature became 20 °C or less. Thereafter, the internal temperature was raised to room temperature (25 ° C) and reacted for 2 hours. After the completion of the reaction, 300 mL of distilled water was added to the solution in the three-necked flask to stop the reaction. Thereafter, the ethyl acetate phase in the obtained solution was recovered, and the ethyl acetate phase was washed 4 times with 300 mL of distilled water, and then the obtained ethyl acetate solution was dried over magnesium sulfate, and then ethyl acetate was distilled off. Thus, 80 g of the starting material A was obtained. Then, 47.4 g of the starting material A, 22 g of pyridine, and 150 mL of ethyl acetate were placed in a 500 mL three-necked flask, and the three-necked flask was cooled by an ice bath. The solution in the three-necked flask was adjusted so that the internal temperature became 20 ° C or less, and 25 g of acrylonitrile chloride was added dropwise. Thereafter, the internal temperature was raised to room temperature and reacted for 3 hours. After the completion of the reaction, 300 mL of distilled water was added to the solution in the three-necked flask to stop the reaction. Thereafter, the ethyl acetate phase in the obtained solution was recovered, and the ethyl acetate phase was washed 4 times with 300 mL of distilled water, and then the obtained ethyl acetate solution was dried over magnesium sulfate, and then ethyl acetate was distilled off. , obtaining the product. Thereafter, the following monomer M1 (20 g) was separated from the obtained product by column chromatography.

[Chemical 4] Monomer M1

8 g of N,N-dimethylacetamide was added to a 500 mL three-necked flask and heated to 65 ° C under a nitrogen stream. In a solution in a three-necked flask, 14.3 g of monomer M1, 3.0 g of acrylonitrile (manufactured by Tokyo Chemical Industry Co., Ltd.), 6.5 g of acrylic acid (manufactured by Tokyo Chemical Industry Co., Ltd.), and 0.4 g of V- were added dropwise over 4 hours. 65 g (manufactured by Wako Pure Chemical Industries, Ltd.) 8 g of N,N-dimethylacetamide solution. After the completion of the dropwise addition, the reaction solution was further stirred for 3 hours. Thereafter, 41 g of N,N-dimethylacetamide was added, and the reaction solution was cooled to room temperature. 0.09 g of 4-hydroxy-2,2,6,6-tetramethylpiperidine-1-oxyl radical (4-hydroxy-2,2,6,6-tetramethylpiperidine-1-) was added to the reaction solution. Oxyl, 4-hydroxy TEMPO) (manufactured by Tokyo Chemical Industry Co., Ltd.), 54.8 g of diazabicycloundecene (1,8-diazabicyclo (5.4.0) undec-7-ene, DBU), at room temperature for 12 hours reaction. Thereafter, 54 g of a 70% by mass aqueous methanesulfonic acid solution was added to the reaction solution. After the completion of the reaction, a reprecipitation treatment was carried out in which the reaction solution was added to water, and then the precipitated solid matter was taken out to obtain 12 g of the polymer 1. The obtained polymer 1 was identified using an infrared absorption (IR) measuring machine (manufactured by Horiba Seisakusho Co., Ltd.). The polymer was dissolved in acetone and measured using KBr crystals. As a result of the IR measurement, it was found that a peak was observed in the vicinity of 2240 cm ^-1 , and acrylonitrile as a nitrile unit was introduced into the polymer. Further, acrylic acid was introduced as a unit containing a carboxylic acid group by acid value measurement. Further, it was dissolved in Dimethyl sulfoxide (DMSO) and measured by a 300 MHz Nuclear Magnetic Resonance (NMR) (AV-300) manufactured by Bruker. It was found that the peak corresponding to the nitrile-containing unit was broadly observed at 2.5-0.7 ppm (5H) at 7.8-8.1 ppm (1H), 5.8-5.6 ppm (1H), 5.4-5.2 ppm (1H), 4.2. -3.9 ppm (2H), 3.3-3.5 ppm (2H), and 2.5-0.7 ppm (6H) broadly observed peaks corresponding to units containing a polymerizable group, and observed broadly at 2.5-0.7 ppm (3H) The peak of the unit containing a carboxylic acid group, the unit containing a polymerizable group: the unit containing a nitrile group: the unit containing a carboxylic acid group = 30:30:40 (mol%).

[Chemical 5] Polymer 1

<Preparation of Composition> According to Table 1, isopropyl alcohol (IPA), polymer 1, polyacrylic acid, methylene bis acrylamide (MBA), and IRGACURE 127 (manufactured by BASF) were prepared. In the solution, Composition 1 to Composition 2 were obtained. Further, in Table 1, the content of each component is expressed in terms of mass% with respect to the total amount of the composition.

[Table 1]

<Example 1> Spin-coated decane coupling agent composition (1 wt% of 3-propenyloxypropyltrimethoxydecane) (Shin-Etsu, Shin-Etsu) on a glass substrate with a decoration (manufactured by Corning) A KBM 5103) solution (solvent: 1% by mass aqueous acetic acid: IPA = 1:1) manufactured by Silicone Co., Ltd., and a glass substrate coated with a composition of a decane coupling agent was dried. Thereafter, the composition 1 (described above) was spin-coated on the obtained glass substrate, and the glass substrate coated with the composition 1 was dried at 80 ° C for 5 minutes to form a layer for forming a layer to be plated. Thereafter, the layer for forming a layer to be plated was subjected to UV irradiation under the atmosphere with a mask having a pattern having a line width of 10 μm (amount of energy: 1 J, 10 mW, wavelength: 256 nm). Further, development was carried out using 1% sodium hydrogencarbonate to form a pattern-coated layer (thickness: 0.4 μm) (see FIGS. 3A to 3B). The glass substrate having the pattern-coated layer was immersed in a 5-fold dilution of MAT-2A of Pd catalyst-providing liquid MAT-2 (manufactured by Uemura Kogyo Co., Ltd.) for 5 minutes at room temperature, and then the glass substrate was taken out. Wash twice with pure water. Then, the obtained glass substrate was immersed in a reducing agent MAB (manufactured by Uemura Kogyo Co., Ltd.) at 36 ° C for 5 minutes, and then the glass substrate was taken out and washed twice with pure water. Thereafter, the obtained glass substrate was immersed in an activation treatment liquid MEL-3 (manufactured by Uemura Kogyo Co., Ltd.) at room temperature for 5 minutes, and then the glass substrate was taken out, and the electroless plating solution was applied at room temperature without washing. It was immersed in Thru-Cup PEA (manufactured by Uemura Industrial Co., Ltd.) for 60 minutes. After that, the glass substrate was taken out and washed twice with pure water to obtain a decorated glass substrate having a patterned copper layer (corresponding to a lead wire. thickness: 1.2 μm) on the patterned plated layer (see FIG. 4A to FIG. 4B). Then, ITO was formed on the entire surface of the obtained decorated glass substrate by a sputtering method using an indium oxide-tin oxide target having a composition of indium oxide and tin oxide of 95:5 by mass and a filling density of 98%. Layer (see FIGS. 5A to 5B). Further, the ITO layer is disposed so as to cover the entire surface of the patterned copper layer. Thereafter, a photosensitive resist material is applied onto the ITO layer to form a photosensitive resist layer. Thereafter, the photosensitive resist layer in which the patterned copper layer (lead wiring) formed before and the region where the desired ITO pattern portion is to be formed is subjected to exposure treatment, and then development processing is performed. The pattern is left by the photolithography method so that the resist pattern remains on the region (see FIGS. 6A to 6C). Thereafter, the ITO layer in the region where the resist pattern is not disposed is etched, and then the resist pattern is removed (see FIGS. 7A to 7D) to manufacture a touch panel having a patterned ITO layer (corresponding to a transparent electrode). A conductive film for the sensor (see FIGS. 8A to 8D).

<Example 2> A conductive film for a touch panel sensor was produced in the same manner as in Example 1 except that the composition 2 was used instead of the composition 1.

<Comparative Example 1> A conductive film for a touch panel sensor was produced in the same manner as in Example 1 except that a resist pattern was placed in a region where the patterned copper layer (lead wiring) was not disposed.

<Comparative Example 2> A conductive film for a touch panel sensor was produced in the same manner as in Example 2 except that a resist pattern was placed in a region where the patterned copper layer (lead wiring) was not disposed.

<Comparative Example 3> A copper layer was formed into a film by a sputtering method on a glass substrate (manufactured by Corning) having a thickness of about 1.5 μm. Then, the negative photosensitive resist was applied onto the surface of the copper layer to a thickness of about 4 μm, and then dried at 90 ° C for 30 minutes to form a negative photosensitive resist layer. Thereafter, the negative photosensitive resist layer was subjected to UV irradiation (100 mJ/cm ² ) under the atmosphere through a negative type mask having a pattern having a line width of 10 μm, and developed using 3% sodium carbonate. Thereby, a resist pattern is formed in a portion corresponding to the lead wiring, and the resist pattern of the other portions is removed. Then, the exposed portion of the copper layer was removed by etching using a ferric chloride solution having a specific gravity of 1.45, and the remaining resist pattern was peeled off. Thereby, a glass substrate with a decoration having a patterned copper layer (corresponding to the lead wiring, thickness: 1.5 μm) was obtained. Then, ITO was formed on the entire surface of the obtained decorated glass substrate by a sputtering method using an indium oxide-tin oxide target having a composition of indium oxide and tin oxide of 95:5 by mass and a filling density of 98%. Floor. Further, the ITO layer is disposed so as to cover the entire surface of the patterned copper layer. Thereafter, a photosensitive resist material is applied onto the ITO layer to form a photosensitive resist layer. Thereafter, the photosensitive resist layer in which the patterned copper layer (lead wiring) formed before and the region where the desired ITO pattern portion is to be formed is subjected to exposure treatment, and then development processing is performed. Patterning is performed by photolithography in such a manner that the resist pattern remains on the region. Thereafter, the ITO layer in the region where the resist pattern is not disposed is etched, and then the resist pattern is removed to produce a conductive film for a touch panel sensor having a patterned ITO layer (corresponding to a transparent electrode). In the comparative example 3, the pattern-formed plating layer was not used, and the patterned copper layer was formed by the copper layer formed by sputtering.

<Comparative Example 4> A conductive film for a touch panel sensor was produced in the same manner as in Comparative Example 3 except that a resist pattern was placed in a region where the patterned copper layer (lead wiring) was not disposed.

<Various Evaluations> (Adhesive Evaluation) The ITO layer in the conductive film for a touch panel sensor obtained in each of the examples and the comparative examples was subjected to a tape peeling test, and the ITO on the patterned copper layer was subjected to the following criteria. The residual ratio (%) of the layer (the area of the ITO layer on the patterned copper layer remaining after the tape peeling/the area of the ITO layer on the patterned copper layer before the tape peeling) × 100} was evaluated. Further, the tape peeling test was carried out in accordance with Japanese Industrial Standards (JIS) K5600-5-6. "A": the case where the residual rate is 80% to 100% "B": the case where the residual rate is less than 80%

(Measurement of Wiring Resistance) The end of the patterned copper layer in the conductive film for a touch panel sensor obtained in each of the examples and the comparative examples was measured using a micro ohmmeter (Milli Ohm Hi-Tester) 3540 (manufactured by Hioki Electric Co., Ltd.). The resistance value between the parts was measured and evaluated according to the following criteria. In the evaluation, the resistance values between the end portions of the ten patterned copper layers were measured, and the average resistance values were used for evaluation. "A": The case where the average resistance value is 10 Ω or less "B": The case where the average resistance value exceeds 10 Ω

In Table 2, the "peripheral wiring protective film" indicates whether or not a resist pattern is disposed in a region where a patterned copper layer (lead wiring) is disposed, and "yes" means that a resist pattern is disposed, and "none" It means that the resist pattern is not configured.

[Table 2]

As shown in Table 2, the conductive film for a touch panel sensor obtained by the manufacturing method of the present invention can obtain a desired effect. On the other hand, in Comparative Example 1 and Comparative Example 2 in which a predetermined resist pattern was not provided, the resistance value of the lead wiring was deteriorated, and the pattern-formed layer was not used and was formed by sputtering treatment and etching treatment. In Comparative Example 3 and Comparative Example 4 in which the wiring was drawn, the adhesion between the lead wiring and the transparent electrode was inferior.

10‧‧‧Substrate
12‧‧‧Laminated layer
14‧‧‧patterned coating
16‧‧‧Leading wiring
18‧‧‧Transparent conductive film
20‧‧‧resist pattern
20A‧‧‧1st resist pattern
20B‧‧‧2nd resist pattern
22‧‧‧Transparent electrode
24‧‧‧Wiring transparent conductive film
100‧‧‧Electrically conductive film for touch panel sensor
S102～S114‧‧‧Steps

1 is a flow chart showing a manufacturing procedure of a preferred embodiment of a method for producing a conductive film for a touch panel sensor according to the present invention. 2A is a plan view of the layered body obtained in the step A. Fig. 2B is a cross-sectional view of the layered body obtained in the step A. Fig. 3A is a plan view of the layered body obtained in the step B. Fig. 3B is a cross-sectional view taken along line A-A of Fig. 3A. 4A is a plan view of the layered body obtained in the step C. Fig. 4B is a cross-sectional view taken along line B-B of Fig. 4; Fig. 5A is a plan view of the laminated body obtained in the step D. Fig. 5B is a cross-sectional view taken along line C-C of Fig. 5A. Fig. 6A is a plan view of the layered body obtained in the step E. Fig. 6B is a cross-sectional view taken along line D-D of Fig. 6A. Fig. 6C is a cross-sectional view taken along the line E-E in Fig. 6A. Fig. 7A is a plan view of the layered body obtained in the step F. Fig. 7B is a cross-sectional view taken along the line F-F in Fig. 7A. Fig. 7C is a cross-sectional view taken along the line G-G in Fig. 7A. Fig. 7D is a cross-sectional view taken along the line H-H in Fig. 7A. Fig. 8A is a plan view of the layered body obtained in the step G. Fig. 8B is a cross-sectional view taken along line I-I of Fig. 8A. Fig. 8C is a cross-sectional view taken along line J-J of Fig. 8A. Fig. 8D is a cross-sectional view taken along the line K-K in Fig. 8A. FIG. 9A is a view showing a modification of the step D, and is a plan view of the laminated body obtained in the step D. FIG. Fig. 9B is a cross-sectional view taken along the line L-L in Fig. 9A.

S102~S114‧‧‧Steps

Claims (6)

A method for manufacturing a conductive film for a touch panel sensor, comprising: manufacturing a touch panel having a substrate, a transparent electrode disposed on the substrate, and a lead-out wiring disposed on the substrate and connected to the transparent electrode The conductive film for the sensor, and the method for manufacturing the conductive film for the touch panel sensor includes: Step A, forming a layer for forming a layer to be plated containing the compound X or the composition Y on the substrate; Step B, The layer for forming a layer to be plated exposes a region where the lead wiring is to be formed, and the unexposed portion of the layer for forming a layer to be plated is removed to form a patterned layer to be plated; Step C, The pattern-shaped layer to be plated is applied with a plating catalyst or a precursor thereof, and a pattern-formed layer to which the plating catalyst or its precursor is applied is plated, and the pattern is plated. Forming the lead-out wiring on the cladding layer; Step D, forming a transparent conductive film on the substrate so as to overlap at least one end of the lead-out wiring; Step E, forming a photosensitive resist on the transparent conductive film Agent layer Exposing the photosensitive resist layer to a region where the lead wiring is formed and a region where the transparent electrode is to be formed, and then exposing the exposed photosensitive resist Developing a treatment layer to form a resist pattern; Step F, removing the transparent conductive film in a region where the resist pattern is not disposed by an etching process to form the transparent electrode; and Step G, Resist pattern removal; wherein, compound X: a compound having a functional group and a polymerizable group that interacts with a plating catalyst or a precursor thereof, and composition Y: containing a plating catalyst or a precursor thereof A composition of a functional group that interacts with a compound and a compound having a polymerizable group. The method for producing a conductive film for a touch panel sensor according to claim 1, wherein the plating treatment is an electroless plating treatment. The method for producing a conductive film for a touch panel sensor according to the first or second aspect of the invention, wherein the transparent electrode contains indium tin oxide. The method for producing a conductive film for a touch panel sensor according to the above aspect, wherein the lead wire contains at least one selected from the group consisting of Cu, Au, Ni, and Ag. One. A conductive film for a touch panel sensor manufactured by the manufacturing method according to any one of claims 1 to 4. A touch panel comprising the conductive film for a touch panel sensor according to claim 5 of the patent application.