TW201226065A - Method and device for the depollution of a pelliculated reticle - Google Patents

Method and device for the depollution of a pelliculated reticle Download PDF

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TW201226065A
TW201226065A TW100132232A TW100132232A TW201226065A TW 201226065 A TW201226065 A TW 201226065A TW 100132232 A TW100132232 A TW 100132232A TW 100132232 A TW100132232 A TW 100132232A TW 201226065 A TW201226065 A TW 201226065A
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Taiwan
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unsealed
pressure
chamber
gas
restricted environment
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TW100132232A
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Chinese (zh)
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Arnaud Favre
Rabah Smail Hadj
Julien Bounouar
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Adixen Vacuum Products
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Publication of TW201226065A publication Critical patent/TW201226065A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00Cleaning by methods involving the use of air flow or gas flow
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G03F1/64Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82Auxiliary processes, e.g. cleaning or inspecting
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983Optical system protection, e.g. pellicles or removable covers for protection of mask
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

The object of the present invention is a device for depolluting a non-sealed, confined environment (1) having a natural leakage (6) and including an interior space (9) bounded by a wall (7), comprising a depollution enclosure (11, 30) means (32, 42) for pumping gas and means (33, 43) for introducing gas. The depollution enclosure (11, 30) has at least two chambers (12, 13; 31, 41) separated by a sealing wall (14, 49). A first chamber (12, 31) is constituted by the part of the enclosure that is situated in contact with the wall (7) of the non-sealed, confined environment (1) and cooperates with first means for pumping (42) and first means for introducing gas (43), and a second chamber (13, 41) is constituted by the part of the enclosure which is situated in contact with the natural leakage (6) from the non-sealed, confined environment (1) and cooperates with second means for pumping (42) and second means for introducing gas (43). The first and second means for pumping gas (32) and (42) have a pumping capacity which can vary independently, and the first and second means for introducing gas (33) and (43) having a gas injection flow rate which can vary independently. The device for depolluting also has means to control the difference in pressure between the interior space (9) and the first chamber (12, 31).

Description

201226065 六、發明說明: 【發明所屬之技術領域】 本發明有關用於消除位於’光罩或遮罩之薄膜下方的分 子污染之方法及有關用於施行此方法之裝置。 【先前技術】 光罩係等同於攝影術中之負片:其有效表面含有一段 待印刷在載體上之資訊。其被使用於曝曬之透射率及印刷 在半導體基板上。入射光束係聚焦在該光罩之有效表面上 ,且該有效表面中所含有之圖案接著被複製在該基板上。 該光罩的污染在該基板上所印刷之影像上具有一直接效應 ,而具有缺陷之印刷。該半導體工業正尋求減少所記錄影 像之尺寸,以獲得日益較小、可集成化及低成本之電子零 組件。當該光罩之尺寸變得較小時,在污染方面之要求變 得曰益嚴格。光罩因此爲一極重要、昂貴及複雜之元件, 其被尋求保持清潔及可作用的。 在其製造之末端,該光罩被清潔及檢查。如果該光罩 係清潔及完美無瑕的,一薄膜被施加至其上,以便保護其 有效表面。極可能變得沈積在該光罩的有效表面上之污染 物將如此變得沈積在該薄膜上。該薄膜係因此針對使該使 用者遍及其使用壽命保護該光罩。被有薄膜包括光學薄膜 (包括平行之多層表面)的沈積,該薄膜在通過該薄膜之 光束上具有高透射率及有限之衝擊。此薄膜最常見的是接 合至該光罩之有效表面的邊緣及藉由一空間與該光罩分開201226065 VI. INSTRUCTIONS OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present invention relates to a method for eliminating molecular contamination under a film of a reticle or mask and to an apparatus for performing the method. [Prior Art] A photomask is equivalent to a negative film in photography: its effective surface contains a piece of information to be printed on a carrier. It is used for the transmittance of exposure and printed on a semiconductor substrate. The incident beam is focused on the active surface of the reticle and the pattern contained in the active surface is then replicated on the substrate. The contamination of the reticle has a direct effect on the image printed on the substrate, with defective printing. The semiconductor industry is seeking to reduce the size of recorded images to obtain increasingly smaller, integrated and low cost electronic components. When the size of the reticle becomes smaller, the requirements for pollution become more stringent. Photomasks are therefore an extremely important, expensive and complex component that is sought to remain clean and functional. At the end of its manufacture, the reticle is cleaned and inspected. If the reticle is clean and flawless, a film is applied to it to protect its effective surface. Contaminants that are likely to become deposited on the active surface of the reticle will thus become deposited on the film. The film is thus intended to protect the reticle for the user throughout its useful life. The film is comprised of an optical film (including parallel multilayer surfaces) that has high transmission and limited impact on the beam passing through the film. The film is most commonly joined to the edge of the active surface of the reticle and separated from the reticle by a space

-5- 201226065 。該薄膜下方之大氣係接著與被使用於 的大氣隔絕。爲防止該薄膜變得變形, 器的孔洞被設計在該薄膜之側面上。這 洩漏角色’平衡局限在該薄膜下方的大 之壓力。 其業已被感受到污染物可仍然存在 之密集使用可造成該光罩的有效面上之 自存在於該基板及該薄膜間之氣體的反 長之現象、尤其是硫酸銨晶體(NH4 ) 2 聚焦區域中發展於該光罩的有效面及該 以技術中之尺寸縮減所放大的現象直接 驟(具有缺陷之印刷)。 其在該薄膜下方之位置造成難以清 膜的光罩之清潔係一冗長、複雜及昂貴 膜通常需要被移除供清潔與接著被重新 作必需被該光罩製造廠及不被該等使·用 間之損失及管理有關縮短使用壽命之光 外成本。因此,其有義務爲光罩之密集 下方之環境係無任何分子污染。 爲確保光罩之有效率防止分子污染 膜,一方法已被提出,其包括用於泵出 、受限制之環境的內部大氣且接著恢復 開該受限制之環境的操作,以便防止極 形式的污染之任何操作。該等氣體經過 運送該光罩之機殼 具有低傳導性過濾 些孔洞實現天然之 氣及該外部大氣間 該薄膜下方。光罩 缺陷。這些缺陷源 應。譬如,晶體成 S〇4之成長能在該 薄膜之間。這些被 地影響微影術之步 潔。業已設有其薄 之過程,因爲該薄 放置。此精細之操 者所施行,導致時 罩的庫存之主要額 使用者確定該薄膜 ,而無需移除該薄 .或排出此一未密封 大氣壓力而沒有打 可能造成譬如特別 天然之洩漏點由該 • 6 --5- 201226065. The atmosphere below the film is then isolated from the atmosphere used. To prevent the film from becoming deformed, the holes of the device are designed on the side of the film. This leaking role' balance is limited to the large pressure below the film. It has been felt that the intensive use of contaminants can still cause the inverse of the gas existing between the substrate and the film on the effective surface of the reticle, especially the ammonium sulfate crystal (NH4) 2 focusing. In the region, the effective surface of the reticle and the phenomenon of the size reduction in the technique are directly reduced (printing with defects). Its location below the film results in a cleaning of the reticle that is difficult to clear. A lengthy, complicated and expensive film usually needs to be removed for cleaning and then reworked must be done by the reticle manufacturer and not by such Loss of use and management of the extra-light costs associated with shortening the service life. Therefore, it is obliged to have no molecular pollution for the environment under the dense shadow mask. In order to ensure the effectiveness of the reticle to prevent molecular contamination of the membrane, a method has been proposed which includes an internal atmosphere for pumping out, a restricted environment and then resuming operation of the restricted environment to prevent extreme forms of contamination. Any operation. The gases are transported through the housing of the reticle to have low conductivity filtering of the holes to create a natural gas and the atmosphere outside the film. Photomask defect. These sources of defects should be. For example, the growth of crystals into S〇4 can be between the films. These are affected by the lithography steps. It has been set up with its thin process because of the thin placement. The finer operator performs, causing the user of the time cover to determine the film without removing the film. Or discharging the unsealed atmospheric pressure without hitting may cause a particularly natural leak. • 6 -

S 201226065 未密封環境內通過至該外部及反之亦然。於光罩之案例中 ,該氣體之通過係藉由具有設在該薄膜的側面上之低傳導 性過濾器的孔洞所做成。 然而,其係接著需要提供機構,以防止該未密封、受 限制之環境的壁面之任何惡化,因爲這些壁面未能夠耐受 住顯著之差壓而不會惡化。於光罩之案例中,一旦施加至 其上之應力造成超出其彈性限制之變形,該薄膜遭受損壞 。此限制視而定薄膜之型式,該等光罩之薄膜未完全相同 。薄膜通常未能耐受住大於約IPa之差壓,因爲以凹度或 凸度之觀點,該薄膜之變形不能超過二毫米而沒有損壞。 爲防止此損壞,壓力中之下降能被調整,以致該未密 封、受限制之環境的內側及外面間之壓力差異係隨時比將 促使機械變形的壓力中之差異較小,該機械變形具有損壞 該壁面之風險。用於光罩,於這些狀態中,由1 000毫巴 至10毫巴的壓力中之下降、隨後上昇至大氣壓力費時超 過五小時。其能被了解其係不可能顯著地加速此方法而沒 有損壞該光罩。然而,此時期係遠較漫長以致不能滿足工 業需求。實際上,用於措失之時間不應超過30分鐘,特 別是在製造電子晶片之工廠中。 【發明內容】 本發明係亦針對提出在一比以先前技藝方法所獲得之 時期較短的時期、即一將爲短到足以與生產限制相容之時 期內,用於未密封、受限制環境之有效率防止分子污染的 201226065 裝置及方法。 本發明係亦針對提出用於防止未密封、受限制環境之 分子污染的裝置及方法,而不需要此環境應被打開及不會 損壞對壓力差異具有低阻抗之壁面。 本發明之又另一目標係提出用於有效消除污染物化合 物之裝置及方法,該污染物化合物可爲位在該有效表面及 該光罩的薄膜之間,而不會移除該薄膜與需要一比用先前 技藝方法較小之時期。 本發明之目的係一用於防止未密封、受限制環境污染 的裝置,該環境具有天然之洩漏處及包含藉由壁面所定界 限的內部空間,該裝置包括: -防止污染封入件,能夠包含該未密封、受限制之環 境, -機構,用於將氣體泵出該防止污染封入件, -機構,用於將氣體導入該防止污染封入件。 該防止污染封入件具有藉由密封、分開壁面所分開之 至少二室,該壁面能夠耐受住該二室間之壓力中的差異: -第一室藉由該封入件位於與該未密封、受限制環境 的壁面接觸、並與用於泵出氣體之第一機構及用於 導入氣體的第一機構合作之部份所構成, -第二室藉由該封入件位於與來自該未密封、受限制 之環境的自然洩漏接觸、並與用於泵出氣體之第二 機構及用於導入氣體的第二機構合作之部份所構成 β 201226065 用於泵出氣體之第一及第二機構,其具有能獨立地變 化動之泵送能力’與用於導入氣體的第一及第二機構,其 具有能獨立地變化動之氣體注入流率,且用於防止污染的 裝置包括控制該未密封、受限制之環境的內部空間中之壓 力及該第一室中的壓力間之差異的機構。 爲顯著地加速防止未密封、受限制之環境的分子污染 ,該壓力必需被維持在該未密封、受限制之環境的內部空 間內,以致於該第一室中,遍及該防止污染操作,其係爲 盡可能接近外邊之普及壓力。藉著此裝置及該相關方法, 其係可能視待達成之壓力及該方法的最佳化而定,達成幾 分鐘(譬如1 〇至3 0分鐘)至數小時(譬如1至5小時) 之防止污染時間。 有利地是,該第一室具有比等第二室之體積較小的體 積。實際上,該第一室之體積必需保有一盡可能接近普及 於該未密封、受限制環境的內部空間中之壓力的壓力,以 便防止其壁面之變形。爲改善該壓力的調整中之反應性, 該第一室之體積必需盡可能爲小的。 根據本發明之第一實施例,該第一室對光爲透明的窗 □。 根據一較佳態樣,該裝置具有用於測量該未密封、受 制之環境的壁面之變形的機構。 用於測量該壁面之變形的機構包含將光束放射朝向該 未密封、受限制之環境的壁面之雷射,及接收藉由該未密 封、受限制之環境的壁面所反射之光束的光接收器。S 201226065 Passing to the outside and vice versa in an unsealed environment. In the case of a reticle, the passage of the gas is made by a hole having a low conductivity filter provided on the side of the film. However, it is then necessary to provide a mechanism to prevent any deterioration of the wall of the unsealed, restricted environment because these walls are not able to withstand significant differential pressure without deterioration. In the case of the reticle, the film is damaged once the stress applied thereto causes deformation beyond its elastic limit. This limitation depends on the type of film, and the films of the masks are not identical. The film typically fails to withstand differential pressures greater than about IPa because the film does not deform more than two millimeters without damage from the viewpoint of concavity or crown. To prevent this damage, the drop in pressure can be adjusted so that the difference in pressure between the inside and the outside of the unsealed, restricted environment is less than any difference in the pressure that will cause mechanical deformation, which is damaged. The risk of this wall. For reticle, in these conditions, a drop in pressure from 1 000 mbar to 10 mbar, followed by an increase in atmospheric pressure takes more than five hours. It can be understood that it is not possible to significantly accelerate this method without damaging the mask. However, this period is far longer than the industrial needs. In fact, the time spent troubleshooting should not exceed 30 minutes, especially in factories that manufacture electronic wafers. SUMMARY OF THE INVENTION The present invention is also directed to an unsealed, restricted environment for a period of time shorter than that obtained by prior art methods, that is, a period that will be short enough to be compatible with production constraints. 201226065 Apparatus and method for efficiently preventing molecular contamination. The present invention is also directed to apparatus and methods for preventing molecular contamination in an unsealed, restricted environment without the need for the environment to be opened and to not damage walls having low impedance to pressure differences. Yet another object of the present invention is to provide an apparatus and method for effectively eliminating contaminant compounds that can be positioned between the active surface and the film of the reticle without removing the film and the need One is smaller than the previous technique. The object of the present invention is a device for preventing unsealed, restricted environmental pollution, the environment having a natural leak and an internal space defined by a wall, the device comprising: - a pollution prevention enclosure, capable of containing An unsealed, restricted environment, a mechanism for pumping gas out of the pollution prevention enclosure, and a mechanism for introducing gas into the pollution prevention enclosure. The pollution prevention enclosure has at least two chambers separated by a sealing and separating wall surfaces, the wall surface being able to withstand the difference in pressure between the two chambers: - the first chamber is located unsealed by the sealing member, Consisting of wall contact of a restricted environment and cooperating with a first mechanism for pumping gas and a first mechanism for introducing a gas, the second chamber being located and unsealed by the seal member a natural leaking contact in a restricted environment, and a part of the second mechanism for pumping gas and a second mechanism for introducing gas, which constitutes the first and second mechanisms for pumping gas, It has a pumping capability capable of independently varying and a first and second mechanism for introducing a gas having a gas injection flow rate that can be independently varied, and means for preventing contamination includes controlling the unsealed A mechanism for the difference between the pressure in the internal space of the restricted environment and the pressure in the first chamber. To significantly accelerate the prevention of molecular contamination in an unsealed, restricted environment, the pressure must be maintained within the interior of the unsealed, restricted environment such that throughout the first chamber, the contamination prevention operation It is as close as possible to the popularity of the outside. By means of the device and the associated method, it may depend on the pressure to be achieved and the optimization of the method, reaching a few minutes (for example, 1 to 30 minutes) to several hours (for example, 1 to 5 hours). Prevent pollution time. Advantageously, the first chamber has a smaller volume than the second chamber. In practice, the volume of the first chamber must maintain a pressure that is as close as possible to the pressure in the interior of the unsealed, confined environment to prevent deformation of the wall. In order to improve the reactivity in the adjustment of the pressure, the volume of the first chamber must be as small as possible. According to a first embodiment of the invention, the first chamber is transparent to light. According to a preferred aspect, the apparatus has means for measuring the deformation of the wall of the unsealed, stressed environment. The mechanism for measuring the deformation of the wall includes a laser that emits a beam of light toward a wall of the unsealed, restricted environment, and a light receiver that receives a beam of light reflected by the wall of the unsealed, restricted environment .

-9- 201226065 根據一特別之執行形式’用於控制該未密封、受限制 之環境的內部空間中之壓力及該第一室中的壓力間之差異 的機構’係用於測量該未密封、受限制之環境的壁面之變 形的機構。 根據另一實施例’該裝置另包括用於啓動之機構,以 獨立地修改該等室的每一者中之栗送速率。爲獲得泵送用 機構的泵送能力中之變動’其係可能譬如控制該幫浦單元 之馬達的轉速及/或可變傳導閥之開口。 根據又另一實施例,該裝置另包括用於啓動之機構, 以獨立地修改注入該等室的每一者中之氣體的流率。爲獲 得氣體注入該防止污染封入件的流率中之變動,其係可能 替如藉著質量流量計及/或藉由打開一可變傳導閥控制該 進來之氣體流量。 本發明之又另一目的係一用於藉著先前所述裝置防止 未密封受限制之環境被污染的方法,該環境具有自然洩漏 及包括藉由壁面定界限的內部空間,該方法包括以下步驟 -將該未密封、受限制之環境放在防止污染封入件中 ,該封入件包括藉由密封、分開壁面所分開之二室 » -設立該未密封、受限制之環境上之分開壁面的密封 -藉由獨立地調整該等室的每一者中之壓力的下降, 同時栗出該第一室中所含有之氣體與該第二室中所 -10- 參 201226065 含有之氣體,並以此一使得該未密封、受限 境的內部空間中之壓力及該第一室中的壓力 異係隨時比易於促使機械變形的壓力差異較 式,而該機械變形能夠損壞該未密封、受限 境的壁面, -當該未密封、受限制之環境的內部空間中之 得該預期之低壓力値p〇時,停止該泵出, -藉由獨立地調整該等室的每一者中之壓力的 同時將氣體導入該第一室及導入該第二室, 一使得該未密封、受限制之環境的內部空間 力及該第一室中的壓力間之差異係隨時比能 機械變形的壓力差異較小的方式,而該機械 於損壞該未密封、受限制之環境的壁面, -當大氣壓力被獲得時,由該防止污染封入件 未密封、受限制之環境。 根據第一實施例,一旦該預期之低壓力値P0 ,則該未密封、受限制之環境在實現壓力的上昇之 許休止在低壓力。 休止在低壓力之期間可爲數分鐘,且較佳地係 分鐘,以便獲得完全之防止污染。如果其係預期施 淨化操作,此期間可爲遠較短、或甚至等於零。 根據第二實施例,一旦該預期之低壓力値P0 ,壓力中之上昇係馬上開始。 制之環 間之差 小的方 制之環 壓力獲 上昇, 並以此 中之壓 夠促使 變形易 取出該 被獲得 前被允 至少1 5 行單一 被獲得-9- 201226065 According to a special implementation form 'a mechanism for controlling the difference between the pressure in the internal space of the unsealed, restricted environment and the pressure in the first chamber' is used to measure the unsealed, A mechanism for deformation of the wall of a restricted environment. According to another embodiment, the apparatus further includes means for activating to independently modify the rate of pumping in each of the chambers. In order to obtain a variation in the pumping capacity of the pumping mechanism, it may be, for example, the speed of the motor that controls the pump unit and/or the opening of the variable conductance valve. According to yet another embodiment, the apparatus further includes a mechanism for activating to independently modify the flow rate of the gas injected into each of the chambers. In order to obtain a change in the flow rate of the gas injected into the pollution-preventing enclosure, it may be possible to control the incoming gas flow by means of a mass flow meter and/or by opening a variable conductance valve. Still another object of the present invention is a method for preventing contamination of an unsealed restricted environment by means of the previously described apparatus, the environment having natural leakage and including an internal space bounded by a wall, the method comprising the following steps - placing the unsealed, restricted environment in a pollution-preventing enclosure comprising two chambers separated by a seal, separating the walls » setting up a separate wall seal in the unsealed, restricted environment - by independently adjusting the pressure drop in each of the chambers while sequestering the gas contained in the first chamber and the gas contained in the second chamber - 201226065 The pressure in the unsealed, confined interior space and the pressure in the first chamber are different from the pressure difference that tends to cause mechanical deformation, and the mechanical deformation can damage the unsealed and restricted environment. Wall, - when the expected low pressure 値p〇 in the interior of the unsealed, restricted environment, stop the pumping - by independently adjusting the pressure in each of the chambers Simultaneously introducing a gas into the first chamber and introducing the second chamber, such that the difference between the internal space force of the unsealed, restricted environment and the pressure in the first chamber is a pressure difference that can be mechanically deformed at any time. In a smaller manner, the machine damages the wall of the unsealed, restricted environment, when the atmospheric pressure is obtained, by the unsealed, restricted environment of the contamination prevention enclosure. According to the first embodiment, once the expected low pressure 値P0, the unsealed, restricted environment is at a low pressure to achieve a rise in pressure. The rest may be a few minutes during the period of low pressure, and preferably minutes, in order to obtain complete contamination prevention. This period can be much shorter, or even equal to zero, if it is expected to perform a purge operation. According to the second embodiment, once the expected low pressure 値P0, the rise in pressure starts immediately. The difference between the loops of the system is small. The pressure of the loop is increased, and the pressure in the middle is enough to facilitate the deformation. It is easy to take out before being obtained. At least 1 5 rows are obtained.

-11 - 201226065 【實施方式】 該光罩1被圖示地顯示於圖1中。該圖案係譬如藉著 雷射光束或電子束複製在基板2上’該基板係譬如由與鉻 層4對齊之石英3所製成,該等圖案被蝕刻在該鉻層4上 。譬如,該基板爲152毫米乘以〗52毫米之方形工件、 6.35毫米厚。一旦被蝕刻,該光罩1被浸入清潔’以便消 除該腐蝕反應之副產物。如果需要,所獲得之光罩1接著 遭受清潔、控制及修補之數個連續操作。該基板2被約2-6毫米厚之框架5所圍繞。該框架5係譬如金屬框架、譬 如由陽極化處理的鋁所製成。在最後的清潔之後’保護薄 膜7係施加至該基板2及固定至該框架5的上表面8,以 便分開被包含於該基板2及該薄膜7之間的內部空間9與 該外部環境。其目標係保護該光罩1的有效表面免於若有 的特別污染,而同時被定位在該聚焦區之外。該框架5可 具有數個不同的幾何形狀(長方形、彎曲形、八邊形等) 〇 該框架5之橫側面10具有孔洞6,該等孔洞設有約i 毫米之直徑,而能夠在該薄膜下方維持與外部壓力相同等 級之壓力。這些孔洞6具有實現該天然之洩漏功能的低傳 導性過濾器。這些孔洞6之數目係譬如一至四個。此天然 之洩漏必定具有低傳導性,以保護藉由該光罩1之有效表 面及該薄膜7定界限的內部空間9之內部大氣。其可因此 被了解該密封之防止污染封入件的過快泵送導致很迅速地 降低環繞該光罩1之氣體壓力的風險。該內部空間9中所 -12- 201226065 含有之氣體不具有藉由該等孔洞6散逸的時間。該內部空 間9的內部大氣係接著在一高於該封入件中的外部大氣之 壓力,使該薄膜7在由該內部至該外部之方向中遭受差壓 。過度差壓亦可顯現之風險在用於升高該壓力的步驟期間 亦存在。被導入該封入件之氣體接著迅速地升高該氣體壓 力,反之它們更緩慢地貫穿該光罩1之天然洩漏點6。差 壓接著顯現在由該外部至該內部之方向中。過度之差壓施 加一可損壞該薄膜7的機械應力。 於圖2所示本發明之實施例中,未密封、受限制之環 境已被了圖示地顯示。於此案例中,其係於防止污染封入 件11中之光罩1。該防止污染封入件11具有藉由耐受住 該壓力差異的密封壁面14所分開之二防止污染室12及13 。該第一密封室12佔有該封入件位於與該光罩1的薄膜7 接觸之部份。在此於該室12及該等孔洞6之間未連通, 以便完全地局限該薄膜上方的環境。該第二密封室13佔 有該封入件11係與該光罩1的孔洞6連結之部份,如此 包圍該室1 2外側的環境。 該等室12,13之每一者能接著彼此獨立地被抽空(箭 頭15)或充塡氣體(箭頭16)。因此’該第一室12中之 壓力P1可爲與在該第二室13中普及之壓力P2不同。該 第一室12中之壓力P1被連續地調整至該薄膜7下方的內 部空間9中普及之壓力P3,並以此一使得藉由該薄膜7 所遭受之壓力差異保持低、較佳地係低於1 Pa的方式。因 此,於該第二室13中’壓力中之下降可爲快速的’以便-11 - 201226065 [Embodiment] The reticle 1 is shown in Fig. 1 as shown. The pattern is, for example, reproduced on the substrate 2 by a laser beam or an electron beam. The substrate is made, for example, of quartz 3 aligned with the chrome layer 4, and the patterns are etched on the chrome layer 4. For example, the substrate is a 152 mm by a 52 mm square workpiece, 6.35 mm thick. Once etched, the reticle 1 is immersed in a cleaning' to eliminate by-products of the corrosion reaction. If desired, the reticle 1 obtained is then subjected to several successive operations of cleaning, control and repair. The substrate 2 is surrounded by a frame 5 of about 2-6 mm thickness. The frame 5 is made of, for example, a metal frame, such as anodized aluminum. After the final cleaning, the protective film 7 is applied to the substrate 2 and to the upper surface 8 of the frame 5 to separate the internal space 9 contained between the substrate 2 and the film 7 from the external environment. The goal is to protect the effective surface of the reticle 1 from any particular contamination while being positioned outside of the focal zone. The frame 5 can have a number of different geometries (rectangular, curved, octagonal, etc.). The lateral side 10 of the frame 5 has holes 6, which are provided with a diameter of about i mm, and are capable of being in the film. The pressure below the same level as the external pressure is maintained below. These holes 6 have a low conductivity filter that achieves this natural leakage function. The number of these holes 6 is, for example, one to four. This natural leakage must have low conductivity to protect the internal atmosphere of the interior 9 by the effective surface of the reticle 1 and the film 7. It can thus be appreciated that the excessive pumping of the seal to prevent contamination of the enclosure results in a very rapid reduction in the risk of gas pressure surrounding the reticle 1. The gas contained in -12-201226065 of the internal space 9 does not have a time to escape by the holes 6. The internal atmosphere of the interior 9 is then subjected to a pressure higher than the external atmosphere in the enclosure, causing the membrane 7 to experience a differential pressure in the direction from the interior to the exterior. The risk that excessive differential pressure can also manifest is also present during the steps used to raise the pressure. The gas introduced into the enclosure then rapidly raises the gas pressure, which in turn penetrates the natural leak point 6 of the reticle 1 more slowly. The differential pressure then appears in the direction from the exterior to the interior. Excessive differential pressure exerts a mechanical stress that can damage the film 7. In the embodiment of the invention illustrated in Figure 2, an unsealed, restricted environment has been illustrated. In this case, it is attached to the reticle 1 which prevents contamination of the encapsulation member 11. The pollution prevention enclosure 11 has two contamination prevention chambers 12 and 13 separated by a sealing wall surface 14 that withstands the pressure difference. The first sealing chamber 12 occupies a portion of the sealing member that is in contact with the film 7 of the reticle 1. There is no communication between the chamber 12 and the holes 6 to completely limit the environment above the film. The second sealed chamber 13 occupies a portion of the sealing member 11 that is coupled to the hole 6 of the reticle 1, so as to surround the environment outside the chamber 12. Each of the chambers 12, 13 can then be evacuated (arrow 15) or gas filled (arrow 16) independently of each other. Therefore, the pressure P1 in the first chamber 12 may be different from the pressure P2 which is popular in the second chamber 13. The pressure P1 in the first chamber 12 is continuously adjusted to the pressure P3 which is popular in the internal space 9 below the film 7, and as a result, the pressure difference suffered by the film 7 is kept low, preferably Less than 1 Pa. Therefore, the drop in 'pressure' in the second chamber 13 can be fast'

-13- 201226065 由該內部空間9經過該等低傳導性過濾器6取出該被污染 之氣體(箭頭17)。 該二室1 2及1 3間之不漏密封的重要性能被了解。在 設有過濾器6之孔洞上方,該光罩1上之分開壁面14的 密封能在該框架5的上面8上或在該橫側面1 0上被獲得 。在本案例中,該光罩1上之分開壁面14的密封係譬如 藉著該框架5的側面10上之密封件1 8所獲得。該等室 12, 13較佳地係具有金屬壁面,其對壓力之高阻抗於該第 一室12中之壓力P1及於該第二室〗3中之P2的驅動中獨 立地提供大自由度。 吾人現在參考圖3,其說明包括根據本發明之防止污 染封入件1 3的裝置之有利實施例。 具有內部體積VI之第一密封室31佔有該封入件30 位於與該光罩1的薄膜7接觸之部份,並與其所特有的用 於泵送之第一機構32及用於導入該氣體的第一機構33合 作。能夠泵送氣體離開該第一室31之泵送用機構32包括 藉由導管被連接至該第一室31之幫浦單元34’該導管包 括可變流量閥35。能夠將氣流導入該第一室31之導入氣 體用機構33係藉由導管36連接至該第一室31,該導管 3 6包括流量控制器3 7、諸如質量流量計或可變流量閥。 該第一室31係亦配備有壓力計3 8。用於控制該光罩1之 薄膜7下方的內部空間9中之壓力P3及該第一室31中的 壓力P1間之差異的機構(未示出),被使用來根據該方 法之步驟作動該閥3 5或該流量控制器3 7。 -14- 201226065 較佳地係,對光爲透明的二窗口 39a及39b被插入該 第一室31面向該光罩1的薄膜7之壁面。該第一室31可 另包括用於測量該薄膜7之變形的機構40。 具有內部體積V2之第二密封室41佔有該封入件位於 與該光罩1之框架5的孔洞6接觸並與其所特有的用於泵 送之第二機構42及用於導入氣體的第二機構43合作之部 份。能夠泵送氣體離開該室41之泵送用機構42包括藉由 導管被連接至該第二室41之幫浦單元44,該導管包含可 變流量閥45。能夠將氣流導入該室41之導入氣體用機構 43係藉由導管46連接至該室41,該導管46包括流量控 制器47、諸如質量流量計或可變流量閥。該第二室4 1係 亦配備有壓力計48。該室41係藉由密封壁面49與該第一 室3 1分開。 在該室41內側,該光罩1係藉由定位機構50所維持 ,包括譬如作動器。這些定位機構50特別被使用來調整 該光罩1之高度,以便在該光罩1的框架5及藉著該等密 封件5 1所接觸的分開壁面49之間提供有效密封。 剛才已敘述之用於防止污染的裝置被使用於施行藉由 圖4所說明之防止污染的方法。 爲了施行該光罩1之防止污染,其相對於該分開壁面 49之定位係藉由該定位機構50所調整,以便在該二室3 1 及41之間提供完全的密封。該氣體接著分別藉由用於泵 送之機構32及42被泵入該等室31及41(曲線60)(步 驟A)。用於泵送之機構32及42具有可變之栗送能力。 -15- 201226065 每一室31,4 1中之壓力係藉著放置於該入口流動中之可變 傳導閥35,45所調節,該傳導閥具有可調整之開口。該等 閥3 5,45之打開至較大或較小範圍能夠在較高或較低速率 下以完全獨立之方式分別泵出進入該等室31,41之每一者 。存在於該內部空間9中之氣體係如此藉由設有低傳導性 過濾器之孔洞6取出,而不會移除該薄膜。 用於啓動之機構(未示出)被提供來修改每一幫浦單 元32及42之泵送能力。這些用於啓動的機構係藉著用於 在控制該光罩1之薄膜7下方的內部空間9中之壓力P3 及該第一室31中的壓力P1間之差異的機構所驅動。用於 控制該內部空間9及該第一室3 1間之壓力差異的機構較 佳地係用於測量該薄膜7之變形的機構40,其表示該第一 室31的內部體積VI中之壓力P1及該內部空間9的體積 V3中之壓力P3間之壓力差異ΔΡ,而與該第二室41的內 部體積V2連通,壓力P2在該內部體積V2中普及。該驅 動被做成,以致該壓力差異AP之測量値P3-P1係隨時比 該壓力差異之閾値較小,該閩値係將有造成能夠損壞該薄 膜7之機械變形的風險之値。該氣體係由該內部空間9經 過具有低傳導性過濾器之孔洞6取出,該孔洞被製成於支 撐該光罩1的薄膜7之框架5中,而不需移除該薄膜7。 由於該等孔洞6之傳導,該內部空間9中之壓力P3 係比該第二室41中之壓力P2較大。當泵送進入該第二室 41時,其係可能考慮此壓力差異,並因此調節該壓力P1 ,以致其總是稍微比該第一室3 1中之壓力P 1較小。因此 -16- 201226065 ,該內部空間9中之壓力P3可隨時被維持在與該第一室 3 1中之壓力P1相同等級的値。因此,該薄膜7之機械變 形保.持足夠低,而不會造成任何損壞。以該等過濾器6之 習知傳導性,其係可能產生其所造成之壓力差異P 3-P2的 正確計算,以便調節該第二室41之泵送用機構42的泵送 能力,如該第一室31中之壓力P1的函數。 能夠在圖3中看出之用於測量變形的機構40可被使 用於經過雷射52及光接收器53之使用來控制該薄膜7之 變形,該光接收器包括一群組之光接收器單元1。該雷射 52放射數毫米寬之直線光束54,並在數度之角度相對一 垂直於該薄膜7之表面的方向被送向該薄膜7(較佳地係 朝向其中心)。該入射光束54越過該窗口 39a及變得在 該薄膜7之表面上反射。該反射光束55越過該窗口 3 9b 及抵達該光接收器53。既然該雷射52及該光接收器53係 於固定位置中,該薄膜7之變形直接導致藉由該光接收器 5 3所接收之反射光束5 5的移位。 因此,其係可能使用測量該薄膜之變形用的機構40, 以便確定該內部空間9中之壓力P3與該第一室31中之壓 力P 1具有很小的差異。用於測量該薄膜7之變形的機構 40可如此被使用於調整該等室31及41的任一者中之泵送 速率,如該薄膜7之所觀察變形的函數。 —旦在該內部空間9中已獲得壓力P3,並在等於被 設定的充分低壓力P0之程度,其係可能分開地設定一休 止時間(步驟B),以便達成該等污染物種類之脫附(曲 -17- 201226065 線6 1 )。爲由防止污染之觀點獲得一顯著的結果,其較佳 地係該休止時間應爲至少1 5分鐘。天然地,如果該污染 係極小的,其可爲較佳的是施行單一淨化操作,該操作需 要較短之休止時間,或甚至全然無休止時間。於該後—案 例中,壓力中之上昇能緊接在該泵送被停止之後發生(曲 線 62 )。 替如在一段閒置時間之後,其係可能於該封入件30 中藉由同時將氣體或氣體之混合物注射進入該室31及41 (步驟C)而增強至大氣壓力Patm (曲線63)。該氣體 係藉由設有低傳導性過濾器之孔洞6導入該內部空間9, 而不會移除該薄膜。諸如流量控制器之用於啓動的機構( 未示出)被設計用於藉由導入用機構33及43之每一者獨 立地修改注射氣體之流量。該注射流量之多變地大或小量 値能夠使大氣壓力更快或較慢地上昇。這些用於啓動的機 構係藉著用於控制該光罩1的薄膜7下方之內部空間9中 的壓力及該第一室31中的壓力間之差異的機構(未示出 )所驅動。用於控制該內部空間9中之壓力及該第一室31 中的壓力間之差異的機構,較佳地係用於測量該薄膜7之 變形的機構40,如該第一室31及與該第二室41連通的內 部空間9間之壓力差異ΔΡ的函數。該氣體係由該內部空 間9經過具有低傳導性過濾器之孔洞6導入,該孔洞被製 成於支撐該光罩1的薄膜7之框架5中,而不需移除該薄 膜7。一旦該大氣壓力已在該等室31及41及於該內部空 間9中被恢復,該光罩能被與該定位機構5 0隔開地設定-13- 201226065 The contaminated gas is taken out from the internal space 9 through the low-conductivity filters 6 (arrow 17). The important performance of the leak-tight seal between the two chambers 12 and 13 is known. Above the hole in which the filter 6 is provided, the sealing of the separating wall 14 on the reticle 1 can be obtained on the upper surface 8 of the frame 5 or on the lateral side 10. In the present case, the sealing system of the split wall 14 on the reticle 1 is obtained, for example, by the seal 18 on the side 10 of the frame 5. The chambers 12, 13 preferably have metal walls that independently provide a large degree of freedom in the high pressure impedance of the first chamber 12 and the P2 in the second chamber. . Referring now to Figure 3, there is illustrated an advantageous embodiment of a device comprising a contamination preventing enclosure 13 in accordance with the present invention. The first sealing chamber 31 having the internal volume VI occupies the portion of the sealing member 30 that is in contact with the film 7 of the reticle 1, and is unique to the first mechanism 32 for pumping and for introducing the gas. The first institution 33 cooperates. The pumping mechanism 32 capable of pumping gas away from the first chamber 31 includes a pumping unit 34' connected to the first chamber 31 by a conduit including a variable flow valve 35. The inlet gas mechanism 33 capable of introducing a gas stream into the first chamber 31 is connected to the first chamber 31 by a conduit 36, which includes a flow controller 37, such as a mass flow meter or a variable flow valve. The first chamber 31 is also equipped with a pressure gauge 38. A mechanism (not shown) for controlling the difference between the pressure P3 in the internal space 9 below the film 7 of the reticle 1 and the pressure P1 in the first chamber 31 is used to operate according to the steps of the method. Valve 35 or the flow controller 37. Preferably, the two windows 39a and 39b which are transparent to light are inserted into the wall surface of the film 7 of the first chamber 31 facing the reticle 1. The first chamber 31 may additionally include a mechanism 40 for measuring the deformation of the film 7. The second sealing chamber 41 having the internal volume V2 occupies the second mechanism 42 for the pumping of the sealing member in contact with the hole 6 of the frame 5 of the reticle 1 and for the second mechanism 42 for introducing the gas 43 part of the cooperation. The pumping mechanism 42 capable of pumping gas away from the chamber 41 includes a pumping unit 44 connected to the second chamber 41 by a conduit containing a variable flow valve 45. An introduction gas mechanism 43 capable of introducing a gas flow into the chamber 41 is connected to the chamber 41 by a conduit 46, which includes a flow controller 47 such as a mass flow meter or a variable flow valve. The second chamber 4 1 is also equipped with a pressure gauge 48. The chamber 41 is separated from the first chamber 31 by a sealing wall surface 49. Inside the chamber 41, the reticle 1 is maintained by a positioning mechanism 50, including, for example, an actuator. These positioning mechanisms 50 are particularly used to adjust the height of the reticle 1 to provide an effective seal between the frame 5 of the reticle 1 and the separate wall faces 49 that are contacted by the sleeving members 51. The apparatus for preventing contamination just described has been used to carry out the method of preventing contamination as illustrated by Fig. 4. In order to prevent contamination of the reticle 1, its positioning relative to the dividing wall 49 is adjusted by the positioning mechanism 50 to provide a complete seal between the two chambers 3 1 and 41. The gas is then pumped into the chambers 31 and 41 (curve 60) by means of mechanisms 32 and 42 for pumping, respectively (step A). The mechanisms 32 and 42 for pumping have variable pumping capabilities. -15- 201226065 The pressure in each chamber 31, 41 is regulated by a variable conductance valve 35, 45 placed in the inlet flow, the conductance valve having an adjustable opening. The opening of the valves 35, 45 to a greater or lesser range can be pumped into each of the chambers 31, 41 in a completely separate manner at a higher or lower rate. The gas system present in the interior space 9 is thus removed by means of a hole 6 provided with a low-conductivity filter without removing the film. A mechanism for activation (not shown) is provided to modify the pumping capability of each of the pump units 32 and 42. These mechanisms for starting are driven by a mechanism for controlling the difference between the pressure P3 in the internal space 9 below the film 7 of the reticle 1 and the pressure P1 in the first chamber 31. The mechanism for controlling the pressure difference between the inner space 9 and the first chamber 31 is preferably a mechanism 40 for measuring the deformation of the film 7, which represents the pressure in the inner volume VI of the first chamber 31. The pressure difference ΔΡ between P1 and the pressure P3 in the volume V3 of the internal space 9 is in communication with the internal volume V2 of the second chamber 41, and the pressure P2 is popularized in the internal volume V2. The drive is made such that the measurement of the pressure difference AP 値 P3-P1 is less than the threshold 该 of the pressure difference at any time, and the lanthanum will have the risk of damaging the mechanical deformation of the film 7. The gas system is taken out from the inner space 9 through a hole 6 having a low-conductivity filter which is formed in the frame 5 of the film 7 supporting the reticle 1 without removing the film 7. Due to the conduction of the holes 6, the pressure P3 in the internal space 9 is larger than the pressure P2 in the second chamber 41. When pumping into the second chamber 41, it is possible to take this pressure difference into account and thus adjust the pressure P1 such that it is always slightly smaller than the pressure P1 in the first chamber 31. Therefore, -16-201226065, the pressure P3 in the internal space 9 can be maintained at the same level as the pressure P1 in the first chamber 31 at any time. Therefore, the mechanical deformation of the film 7 is kept low enough without causing any damage. With the conventional conductivity of the filters 6, it is possible to produce a correct calculation of the pressure difference P3-P2 caused by it, in order to adjust the pumping capacity of the pumping mechanism 42 of the second chamber 41, such as A function of the pressure P1 in the first chamber 31. The mechanism 40 for measuring deformation, which can be seen in Figure 3, can be used to control the deformation of the film 7 via the use of a laser 52 and a light receiver 53, the light receiver comprising a group of light receivers Unit 1. The laser 52 emits a linear beam 54 of a width of a few millimeters and is directed to the film 7 (preferably toward its center) at a degree of angle relative to a direction perpendicular to the surface of the film 7. The incident beam 54 passes over the window 39a and becomes reflected on the surface of the film 7. The reflected beam 55 passes over the window 39b and reaches the light receiver 53. Since the laser 52 and the light receiver 53 are in a fixed position, the deformation of the film 7 directly causes displacement of the reflected beam 5 5 received by the light receiver 53. Therefore, it is possible to use a mechanism 40 for measuring the deformation of the film to determine that the pressure P3 in the internal space 9 has a small difference from the pressure P 1 in the first chamber 31. The mechanism 40 for measuring the deformation of the film 7 can be used to adjust the pumping rate in any of the chambers 31 and 41 as a function of the observed deformation of the film 7. Once the pressure P3 has been obtained in the internal space 9, and at a level equal to the set sufficiently low pressure P0, it is possible to separately set a rest time (step B) in order to achieve the desorption of such contaminant species. (曲-17- 201226065 line 6 1). In order to obtain a significant result from the viewpoint of preventing contamination, it is preferred that the rest time should be at least 15 minutes. Naturally, if the contamination is extremely small, it may be preferable to perform a single purification operation which requires a short rest period, or even a total endless time. In the latter case, the rise in pressure can occur immediately after the pumping is stopped (curve 62). Alternatively, after a period of inactivity, it may be enhanced to atmospheric pressure Patm (curve 63) in the enclosure 30 by simultaneously injecting a mixture of gases or gases into the chambers 31 and 41 (step C). The gas is introduced into the internal space 9 by a hole 6 provided with a low-conductivity filter without removing the film. A mechanism (not shown) for starting up such as a flow controller is designed to independently modify the flow rate of the injection gas by each of the introduction mechanisms 33 and 43. The large or small amount of this injection flow can cause atmospheric pressure to rise faster or slower. These mechanisms for starting are driven by a mechanism (not shown) for controlling the difference between the pressure in the internal space 9 under the film 7 of the reticle 1 and the pressure in the first chamber 31. A mechanism for controlling the difference between the pressure in the internal space 9 and the pressure in the first chamber 31 is preferably a mechanism 40 for measuring the deformation of the film 7, such as the first chamber 31 and The function of the pressure difference ΔΡ between the internal spaces 9 in which the second chamber 41 communicates. The gas system is introduced from the internal space 9 through a hole 6 having a low-conductivity filter which is formed in the frame 5 of the film 7 supporting the reticle 1 without removing the film 7. Once the atmospheric pressure has been restored in the chambers 31 and 41 and in the interior space 9, the reticle can be set spaced from the positioning mechanism 50.

S -18- 201226065 ’且最後由該防止污染封入件移除。 自然地,本發明不受限於所敘述之實施例,但能爲對 於那些熟諳該技藝者可以理解的極多另一選擇實施例之物 件’而未與本發明之精神脫離。特別地是,其係可能未與 本發明之架構脫離地修改該等防止污染室之形狀及體積, 使用任何習知機構來控制及/或比較該等防止污染室及該 未密封、受限制之環境的內部空間中之壓力。 【圖式簡單說明】 本發明之其他特色及優點將由較佳實施例之以下敘述 及由其所附圖面的閱讀顯現,該實施例當然被給與當作非 詳盡之說明: -圖1係設有其薄膜之光罩的槪要剖視圖; -圖2係根據本發明之一實施例的防止污染封入件中 之光罩的剖視圖; -圖3係根據本發明之一實施例的防止污染用裝置之 槪要說明圖,該裝置被使用於防止污染具有薄膜之光罩; -圖4係於該方法之不同步驟的定序期間,該薄膜下 方的內部空間中之壓力的進展之槪要說明圖,該未密封、 受限制之環境的內部空間中之壓力P3被指示在該y軸上 ,且該方法於該時間τ期間之進展被指示在該X軸上。 於這些圖面中,各種完全相同之元件帶有相同之參考 數字。 201226065 【主要元件符號說明】 1 :光罩 2 :基板 3 :石英 4 :鉻層 5 :框架 6 :孔洞 7 :薄膜 8 :上表面 9 :內部空間 1 〇 :橫側面 1 1 :封入件 1 2 :防止污染室 1 3 :防止污染室 1 4 :密封壁面 1 5 :箭頭 16 :箭頭 1 7 :箭頭 1 8 :密封件 3 0 :封入件 3 1 :密封室 3 2 :用於泵送之機構 3 3 :第一機構 34 :幫浦單元S -18- 201226065 ' and finally removed by the pollution prevention enclosure. Naturally, the present invention is not limited to the embodiments described, but can be deviated from the spirit of the invention for those objects of many alternative embodiments that are well understood by those skilled in the art. In particular, it may not modify the shape and volume of the pollution prevention chambers separately from the structure of the present invention, and any conventional mechanism may be used to control and/or compare the pollution prevention chambers and the unsealed, restricted The pressure in the internal space of the environment. BRIEF DESCRIPTION OF THE DRAWINGS Other characteristics and advantages of the present invention will be apparent from the following description of the preferred embodiments and the reading of the accompanying drawings. This embodiment is of course given as non-exhaustive description: - Figure 1 BRIEF DESCRIPTION OF THE DRAWINGS FIG. 2 is a cross-sectional view of a reticle in a contamination preventing encapsulation according to an embodiment of the present invention; FIG. 3 is a view for preventing contamination according to an embodiment of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS The device is intended to be used to prevent contamination of a reticle having a film; - Figure 4 is a summary of the progress of the pressure in the internal space below the film during the sequencing of the different steps of the method. The pressure P3 in the interior space of the unsealed, restricted environment is indicated on the y-axis and the progression of the method during this time τ is indicated on the X-axis. In the drawings, the identical components have the same reference numerals. 201226065 [Description of main components] 1 : Photomask 2 : Substrate 3 : Quartz 4 : Chromium layer 5 : Frame 6 : Hole 7 : Film 8 : Upper surface 9 : Internal space 1 〇 : Horizontal side 1 1 : Enclosure 1 2 : Pollution prevention chamber 1 3 : Pollution prevention chamber 1 4 : Seal wall surface 1 5 : Arrow 16 : Arrow 1 7 : Arrow 1 8 : Seal 3 0 : Enclosure 3 1 : Seal chamber 3 2 : Mechanism for pumping 3 3 : First mechanism 34: pump unit

S -20- 201226065 3 5 :可變流量閥 36 :導管 3 7 :流量控制器 3 8 :壓力計 39a :窗口 39b :窗口 40 :機構 4 1 :密封室 42 :用於泵送之機構 43:導入氣體用機構 44 :幫浦單元 45 :可變流量閥 46 :導管 4 7 :流量控制器 4 8 :壓力計 49 :密封壁面 5 〇 :定位機構 5 1 :密封件 5 2 :雷射 5 3 :光接收器 54 :光束 5 5 :反射光束 60 :曲線 6 1 :曲線 -21 - 201226065 62 :曲線 63 :曲線S -20- 201226065 3 5 : Variable flow valve 36 : conduit 3 7 : flow controller 3 8 : pressure gauge 39a : window 39b : window 40 : mechanism 4 1 : sealed chamber 42 : mechanism for pumping 43 : Mechanism for introducing gas 44: Pump unit 45: Variable flow valve 46: Catheter 4 7: Flow controller 4 8: Pressure gauge 49: Sealing wall 5 〇: Positioning mechanism 5 1 : Seal 5 2: Laser 5 3 : Light Receiver 54: Beam 5 5 : Reflected Beam 60: Curve 6 1 : Curve-21 - 201226065 62 : Curve 63: Curve

S -22-S -22-

Claims (1)

201226065 七、申請專利範圍: 1. 一種用於防止未密封、受限制之環境(1 )被污染 的裝置,該環境具有自然洩漏(6)及包含藉由壁面(7) 定界限的內部空間(9),該裝置包括: -防止污染封入件(1 1,3 0 ),能夠包含該未密封、 受限制之環境(1 ), -機構(3 2,42 ),用於將氣體泵出該防止污染封入 件(11 ), -機構(3 3,43 ),用於將氣體導入該防止污染封入件 (11 ), 其特徵爲該防止污染封入件(11,30)具有藉由密封 、分開壁面(14,49)所分開之至少二室(12,13 ; 31,41 ) ,該壁面能夠耐受住該二室(12,13 ; 31,41 )間之壓力中 的差異: -第一室(12,31 )藉由該封入件位於與該未密封、 受限制環境(1)的壁面(7)接觸、並與用於泵出氣體之 第一機構(32)及用於導入氣體的第一機構(33)合作之 部份所構成, -第二室(13,41)藉由該封入件位於與來自該未密 封、受限制之環境(1)的自然洩漏(6)接觸、並與用於 泵出氣體之第二機構(42)及用於導入氣體的第二機構( 43 )合作之部份所構成, 用於泵出氣體之第一及第二機構(32)及(42),其 具有能獨立地變化之泵送能力,與用於導入氣體的第一及 -23- 201226065 第二機構(33 )及(43 ),其具有能獨立地變化之氣體注 入流率, 且其中用於防止污染的裝置包括控制該未密封、受限 制之環境(1)的內部空間(9)中之壓力P3及該第一室 (12,31)中的壓力P1間之差異的機構。 2. 如申請專利範圍第1項之裝置,其中該第一室( 12,31)具有比該第二室(13,41)之體積V2較小的體積 VI。 3. 如申請專利範圍第1及2項其中之一項的裝置,其 中該第一室(12,31)具有對光爲透明的窗口(39a,39b) ο 4 .如申請專利範圍第3項之裝置,包括測量該未密封 、受限制之環境(1 )的壁面(7 )之變形的機構(40 )。 5 .如申請專利範圍第4項之裝置,其中用於測量該壁 面(7 )之變形的機構(40 )包括將光束放射朝向該未密 封、受限制之環境(1)的壁面(7)之雷射(52) ’及接 收藉由該未密封、受限制之環境(1 )的壁面(7 )所反射 之光束的光接收器(53)。 6. 如申請專利範圍第4及5項其中之一項的裝置’其 中用於控制該未密封、受限制之環境(1 )的內部空間(9 )中之壓力P3及該第一室(12,31 )中的壓力P1間之差 異的機構,係用於測量該未密封、受限制之環境的壁面之 變形的機構。 7. 如申請專利範圍第1或2項之裝置,另包括用於啓 -24- S 201226065 動之機構,以獨立地修改該等室(1 2,1 3 ; 3 1 ,4 1 )的每一 者中之泵送速率。 8·如申請專利軔圍第1或2項之裝置,另包括用於啓 動之機構,以獨立地修改注入該等室(12,13 ; 31,41 )的 每一者中之氣體的流率。 9. 如申請專利範圍第1或2項之裝置,另包括機構( 50 ),以將該未密封、受限制之環境(1 )定位在該防止 污染封入件(11,30)內。 10. —種用於藉著如申請專利範圍第1或2項之裝置 防止未密封受限制之環境(1)被污染的方法,該環境具 有自然洩漏(6)及包括藉由壁面(7)定界限的內部空間 (9 ),該方法包括以下步驟: -將該未密封、受限制之環境(1 )放在防止污染封 入件(1 1,3 0 )中,該封入件包括藉由密封、分開壁面( 1 4,4 9 )所分開之二室(1 2,1 3 ; 3 1,4 1 ), -設立該未密封、受限制之環境(1 )上之分開壁面 (14,49 )的密封, -藉由獨立地調整該等室(12,13; 31,41)的每一者 中之壓力的下降,同時泵出該第一室(12,31)中所含有 之氣體與該第二室(31,4 1)中所含有之氣體,並以此一 使得該未密封、受限制之環境(1 )的內部空間(9 )中之 壓力P3及該第一室(12,31)中的壓力P1間之差異係隨 時比易於促使機械變形的壓力差異較小的方式,而該機械 變形能夠損壞該未密封、受限制之環境(1 )的壁面(7 ) -25- 201226065 -當該未密封、受限制之環境(1 )的內部空間(9 ) 中之壓力P3獲得該預期之低壓力値p〇時,停止該泵出, -藉由獨立地調整該等室(!2,13; 31,41)的每一者 中之壓力的上昇,同時將氣體導入該第—室(12,31)及 導入該第二室(13,41),並以此一使得該未密封、受限 制之環境(1)的內部空間(9)中之壓力及該第一室( 12,31)中的壓力間之差異Δρ係隨時比能夠促使機械變形 的壓力差異較小的方式,而該機械變形易於損壞該未密封 、受限制之環境(1 )的壁面(7 ), -當大氣壓力Patm被獲得時,由該防止污染封入件 (1 1 ,3 0 )取出該未密封、受限制之環境(1 )。 11 .如申請專利範圍第1 0項之防止污染的方法,其中 一旦該預期之低壓力値P0被獲得,則該未密封、受限制 之環境(1)在實現壓力的上昇之前被允許休止在低壓力 〇 12.如申請專利範圍第1 1項之防止污染的方法,其中 休止在低壓力之期間係至少1 5分鐘。 3 -26-201226065 VII. Scope of application for patents: 1. A device for preventing contamination of an unsealed, restricted environment (1) that has a natural leak (6) and contains an internal space bounded by a wall (7) ( 9) The apparatus comprises: - a pollution prevention enclosure (1 1, 30) capable of containing the unsealed, restricted environment (1), - a mechanism (3 2, 42) for pumping gas out of the a pollution prevention sealing member (11), a mechanism (3 3, 43) for introducing a gas into the pollution prevention sealing member (11), characterized in that the pollution prevention sealing member (11, 30) has a seal and a separation At least two chambers (12, 13; 31, 41) separated by walls (14, 49), the wall being able to withstand the difference in pressure between the two chambers (12, 13; 31, 41): - first The chamber (12, 31) is located in contact with the wall (7) of the unsealed, restricted environment (1), and with the first mechanism (32) for pumping gas and for introducing gas. The first body (33) cooperates with the part, - the second chamber (13, 41) is located and unsealed by the seal The natural environment (1) of the restricted environment (1) is in contact with, and is combined with a second mechanism (42) for pumping gas and a second mechanism (43) for introducing gas, for the pump The first and second mechanisms (32) and (42) of the gas having independently capable pumping capability, and the first and the -23-201226065 second mechanisms (33) and (43) for introducing the gas ) having a gas injection flow rate that can be varied independently, and wherein the means for preventing contamination includes controlling the pressure P3 in the internal space (9) of the unsealed, restricted environment (1) and the first chamber The mechanism of the difference between the pressures P1 in (12, 31). 2. The device of claim 1, wherein the first chamber (12, 31) has a smaller volume VI than the volume V2 of the second chamber (13, 41). 3. The device of any one of claims 1 and 2, wherein the first chamber (12, 31) has a window (39a, 39b) that is transparent to light. ο 4 as claimed in claim 3 The device comprises a mechanism (40) for measuring the deformation of the wall (7) of the unsealed, restricted environment (1). 5. The device of claim 4, wherein the mechanism (40) for measuring deformation of the wall (7) comprises directing a beam of light toward a wall (7) of the unsealed, restricted environment (1) A laser (52)' and a light receiver (53) that receives a beam of light reflected by the wall (7) of the unsealed, restricted environment (1). 6. The device of claim 4, wherein the pressure P3 in the internal space (9) of the unsealed, restricted environment (1) and the first chamber (12) The mechanism for the difference between the pressures P1 in , 31) is a mechanism for measuring the deformation of the wall surface of the unsealed, restricted environment. 7. If the device of claim 1 or 2 is applied, the mechanism for the activation of the 24-200 201265 is also included to independently modify each of these rooms (1 2,1 3 ; 3 1 , 4 1 ) The pumping rate in one. 8. If the device of claim 1 or 2 is applied for, further includes a mechanism for activation to independently modify the flow rate of the gas injected into each of the chambers (12, 13; 31, 41). . 9. The apparatus of claim 1 or 2, further comprising a mechanism (50) for positioning the unsealed, restricted environment (1) within the pollution prevention enclosure (11, 30). 10. A method for preventing contamination of an unsealed restricted environment (1) by means of a device as claimed in claim 1 or 2, the environment having a natural leak (6) and including by a wall (7) a defined internal space (9), the method comprising the steps of: - placing the unsealed, restricted environment (1) in a pollution prevention enclosure (1 1,300), the enclosure comprising by sealing Separate the two compartments separated by the wall (1 4, 4 9 ) (1 2, 1 3 ; 3 1, 4 1 ), - set up the separate wall on the unsealed, restricted environment (1) (14, 49 Sealing - by independently adjusting the pressure drop in each of the chambers (12, 13; 31, 41) while pumping out the gas contained in the first chamber (12, 31) a gas contained in the second chamber (31, 41), and thereby a pressure P3 in the internal space (9) of the unsealed, restricted environment (1) and the first chamber (12, The difference between the pressures P1 in 31) is in a manner that is less than the pressure difference that tends to cause mechanical deformation at any time, and the mechanical deformation can damage the unsealed, restricted Wall (7) of the environment (1) -25- 201226065 - When the pressure P3 in the internal space (9) of the unsealed, restricted environment (1) obtains the expected low pressure 値p〇, stop the pump Out, - by independently adjusting the rise in pressure in each of the chambers (! 2, 13; 31, 41) while introducing gas into the first chamber (12, 31) and into the second chamber (13, 41), and thereby making the difference between the pressure in the internal space (9) of the unsealed, restricted environment (1) and the pressure in the first chamber (12, 31) Δρ a wall surface (7) that is less susceptible to the difference in pressure that can cause mechanical deformation, and which is susceptible to damage to the wall (7) of the unsealed, restricted environment (1), when the atmospheric pressure Patm is obtained, is sealed by the pollution prevention The piece (1 1 , 3 0 ) takes out the unsealed, restricted environment (1). 11. A method of preventing pollution according to claim 10, wherein the unsealed, restricted environment (1) is allowed to rest before the pressure rise is achieved once the expected low pressure 値P0 is obtained. Low pressure 〇 12. The method of preventing pollution according to claim 11 of the patent application, wherein the rest is at least 15 minutes during the period of low pressure. 3 -26-
TW100132232A 2010-09-08 2011-09-07 Method and device for the depollution of a pelliculated reticle TW201226065A (en)

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