TW201224166A - Housing and method for making the same - Google Patents

Housing and method for making the same Download PDF

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TW201224166A
TW201224166A TW99142966A TW99142966A TW201224166A TW 201224166 A TW201224166 A TW 201224166A TW 99142966 A TW99142966 A TW 99142966A TW 99142966 A TW99142966 A TW 99142966A TW 201224166 A TW201224166 A TW 201224166A
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Taiwan
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aluminum
film
casing
ion implantation
manufacturing
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TW99142966A
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Chinese (zh)
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TWI415951B (en
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Hsin-Pei Chang
Wen-Rong Chen
Huan-Wu Chiang
Cheng-Shi Chen
Cheng Zhang
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Hon Hai Prec Ind Co Ltd
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Abstract

A housing is provided which includes an aluminum or aluminum alloy substrate, an aluminum layer formed on the aluminum or aluminum alloy substrate and an ion implantation layer formed on the aluminum layer. The ion implantation layer contains Mn. The housing has a high corrosion resistance. A method for making the housing is also provided.

Description

201224166 六、發明說明: 【發明所屬之技術領域】 [_ι] 本發明涉及一種殼體及其製造方法,特別涉及—種銘戍 鋁合金的殼體及其製造方法。 【先前技術】 [0002] 鋁或鋁合金目前被廣泛應用於航空、航天、汽車及微電 子等工業領域。但鋁或鋁合金的標準電極電位很低,防 腐蝕差,暴露於自然環境中會引起表面快速腐蝕。 0 [0003] 提高鋁或鋁合金防腐蝕悻的方法通常係在其表面形成保 護性的塗層。傳統的陽極氧化、電沉積、化學轉化膜技 術及電鍍等鋁或鋁合金的表面處理方法存在生產工藝複 雜、效率低、環境污染嚴重等缺點。 [画]真空鑛膜(PVD )為一清潔的成膜技術。然而,由於銘或 鋁合金的標準電極電位很低,且PVD塗層本身不可避免的 會存在微小的孔隙,因此形成於鋁或鋁合金表面的PVD塗 層容易發生電化學腐蝕,導致該PVD塗層的防腐蝕性能降 V 低,對鋁或鋁合金的防腐‘能办的提高有限。 【發明内容】 [〇〇〇5]鑒於此’提供一種具有較好的耐腐蝕性的鋁或鋁合金的 殼體。 [0006] 另外,還提供一種上述殼體的製造方法》 [0007] 一種殼體,包括鋁或鋁合金基體,該殼體還包括依次形 成於该銘或銘合金基體上的鋁膜及離子注入膜,所述鋁 族以磁控激射鑛膜法形成,所述離子注入膜中主要含有 099142966 表單編號A0101 第3頁/共9頁 0992074466-0 201224166 Μη金屬離子。 [0008] 一種殼體的製造方法,其包括如下步驟: [0009] 提供鋁或鋁合金基體; [0010] 於該鋁或鋁合金基體的表面磁控濺射形成鋁膜; [0011] 於該鋁膜上注入Μη金屬離子,形成主要含有Μη金屬的離 子注入膜。 [0012] 本發明所述殼體的製造方法,在鋁或鋁合金基體上依次 形成鋁膜及Μη金屬的離子注入膜,該鋁膜及離子注入膜 組成的複合膜層可顯著提高所述殼體的耐腐蝕性,且該 殼體的製造工藝簡單、幾乎無環境污染。 【實施方式】 [0013] 請參閱圖1,本發明一較佳實施例的殼體10包括鋁或鋁合 金基體11、依次形成於該鋁或鋁合金基體11表面的鋁膜 13及離子注入膜15。 [0014] 所述鋁膜13的厚度為0.5〜6.0/zm。所述鋁膜13籍由磁控 濺射鍍膜法形成。 [0015] 該殼體10還包括形成於該鋁膜13上的離子注入膜15。所 述離子注入膜15中主要含Μη金屬離子。 [0016] 所述殼體10的製造方法主要包括如下步驟: [0017] 提供鋁或鋁合金基體11,該鋁或鋁合金基體11可以籍由 沖壓成型得到,其具有待製得的殼體10的結構。 [0018] 將所述鋁或鋁合金基體11放入盛裝有乙醇或丙酮溶液的 099142966 表單編號Α0101 第4頁/共9頁 0992074466-0 201224166 [0019] Ο [0020] 〇 [0021] 超聲波清洗器中進行震動清洗’以除去鋁或鋁合金基體 11表面的雜質和油污。清洗完畢後烘乾備用。 再對鋁或鋁合金基體11的表面進行氬氣電漿清洗,進一 步去除鋁或鋁合金基體11表面的油污,以改善鋁或紹合 金基體11表面與後續塗層的結合力。對紹或紹合金基體 Π的表面進行氬氣電漿清洗的方法包括如下步驟:將紹 或铭合金基體11放入一真空锻膜機(圖未示)的鑛膜室 内的工件架上,對該鍍膜室進行抽真空處理至真空度為 8. Oxl〇_3Pa,以300~500sccm (標準狀態毫升/分鐘) 的流量向鍍膜室内通入純度為99. 999%的氬氣(工作氣體 ),於鋁或鋁合金基體11上施加-300—800V的偏壓,在 所述鑛膜室中形成高頻電壓,使所述氬氣產生電漿對鋁 或鋁合金基體11的表面進行物理轟擊,而達到對鋁或鋁 合金基體11表面清洗的目的。所述氬氣電漿清洗的時間 為 3 〜1 0 m i η 〇 .….1 丨:.:. .; .: :::::. 採用磁控濺射的方式在鋁或鋁合拿基趙1 1表面依次形成 链膜13及離子注入膜15。形成該鋁膜13及離子注入膜15 的具體操作方法及工藝參數為: 在所述電漿清洗完成後,調節氬氣(工作氣體)流量至 100~300sccm,設定知 I付的功率為2〜I2kw,於鋁或鋁合 金基體11上施加~ 1 〇 Ο ~4()〇V的偏壓,沉積鋁膜13。沉積 該鋁膜13的時間為3〇 °^〇ιηίη。 [0022] 形成所述鋁膜13後, 面注入Μη金屬離子, 採用離子注入工藝,於該鋁膜13表 %成離子注入膜15。 099142966 表單編號Α0101201224166 VI. Description of the Invention: [Technical Field to Which the Invention Is Applicable] [_] The present invention relates to a casing and a method of manufacturing the same, and more particularly to a casing of an aluminum alloy and a method of manufacturing the same. [Prior Art] [0002] Aluminum or aluminum alloys are currently widely used in aerospace, aerospace, automotive, and microelectronics industries. However, the standard electrode potential of aluminum or aluminum alloy is very low, and the corrosion resistance is poor. Exposure to the natural environment causes rapid surface corrosion. 0 [0003] The method of improving the corrosion resistance of aluminum or aluminum alloys is usually to form a protective coating on the surface. Conventional anodizing, electrodeposition, chemical conversion film technology, and surface treatment methods for aluminum or aluminum alloys such as electroplating have disadvantages such as complicated production processes, low efficiency, and serious environmental pollution. [Drawing] Vacuum film (PVD) is a clean film forming technique. However, since the standard electrode potential of the aluminum alloy or the aluminum alloy is very low, and the PVD coating itself inevitably has minute pores, the PVD coating formed on the surface of the aluminum or aluminum alloy is prone to electrochemical corrosion, resulting in the PVD coating. The corrosion resistance of the layer is reduced to a low V, and the improvement of the corrosion resistance of the aluminum or aluminum alloy can be limited. SUMMARY OF THE INVENTION [〇〇〇5] In view of this, a housing of aluminum or aluminum alloy having better corrosion resistance is provided. [0006] In addition, a method of manufacturing the above-described housing is also provided. [0007] A housing includes an aluminum or aluminum alloy base, and the housing further includes an aluminum film and ion implantation sequentially formed on the base of the Ming or Ming alloy. Membrane, the aluminum group is formed by a magnetron lasing film method, and the ion implantation film mainly contains 099142966 Form No. A0101 Page 3 / 9 pages 0992074466-0 201224166 Μη metal ion. [0008] A method of manufacturing a casing, comprising the steps of: providing an aluminum or aluminum alloy substrate; [0010] forming an aluminum film by magnetron sputtering on a surface of the aluminum or aluminum alloy substrate; The Mn metal ions are implanted on the aluminum film to form an ion implantation film mainly containing Μη metal. [0012] In the method for manufacturing a casing according to the present invention, an aluminum film and a metal ion implantation film of a Μn metal are sequentially formed on an aluminum or aluminum alloy substrate, and the composite film layer composed of the aluminum film and the ion implantation film can significantly improve the shell The corrosion resistance of the body, and the manufacturing process of the casing is simple and almost no environmental pollution. Embodiments [0013] Referring to FIG. 1, a housing 10 according to a preferred embodiment of the present invention includes an aluminum or aluminum alloy substrate 11, an aluminum film 13 and an ion implantation film sequentially formed on the surface of the aluminum or aluminum alloy substrate 11. 15. [0014] The aluminum film 13 has a thickness of 0.5 to 6.0/zm. The aluminum film 13 is formed by a magnetron sputtering coating method. [0015] The casing 10 further includes an ion implantation film 15 formed on the aluminum film 13. The ion implantation film 15 mainly contains Μη metal ions. [0016] The manufacturing method of the housing 10 mainly comprises the following steps: [0017] An aluminum or aluminum alloy base 11 is provided, which can be obtained by press forming, which has a housing 10 to be produced. Structure. [0018] The aluminum or aluminum alloy substrate 11 is placed in a 099142966 containing ethanol or acetone solution. Form No. 101 0101 Page 4 / 9 pages 0992074466-0 201224166 [0020] Ο [0021] Ultrasonic cleaner The vibration cleaning is performed to remove impurities and oil stains on the surface of the aluminum or aluminum alloy substrate 11. After cleaning, dry and set aside. Further, the surface of the aluminum or aluminum alloy substrate 11 is subjected to argon plasma cleaning to further remove the oil stain on the surface of the aluminum or aluminum alloy substrate 11 to improve the adhesion of the surface of the aluminum or the alloy substrate 11 to the subsequent coating. The method for performing argon plasma cleaning on the surface of the Shao or Shao alloy base crucible comprises the following steps: placing the Shao or Ming alloy base 11 into a workpiece holder in a film chamber of a vacuum forging machine (not shown), The argon gas (working gas) having a purity of 99.999% is supplied to the coating chamber at a flow rate of 300 to 500 sccm (standard state cc/min) at a vacuum of 8. Oxl 〇 _ 3 Pa. Applying a bias voltage of -300-800 V to the aluminum or aluminum alloy substrate 11 to form a high-frequency voltage in the film chamber, causing the argon gas to generate a plasma to physically bombard the surface of the aluminum or aluminum alloy substrate 11. The purpose of cleaning the surface of the aluminum or aluminum alloy substrate 11 is achieved. The argon plasma cleaning time is 3 ~1 0 mi η 〇.....1 丨:.:. .; .: :::::. Using magnetron sputtering in aluminum or aluminum alloy The surface of the film 1 and the ion implantation film 15 are sequentially formed on the surface of the film 1 1 . The specific operation method and process parameters for forming the aluminum film 13 and the ion implantation film 15 are: after the plasma cleaning is completed, adjusting the flow rate of the argon gas (working gas) to 100 to 300 sccm, and setting the power of the I to be 2~ I2kw, a bias of ~1 〇Ο ~4()〇V is applied to the aluminum or aluminum alloy substrate 11 to deposit an aluminum film 13. The time for depositing the aluminum film 13 is 3 〇 ° 〇 ιηίη. After the aluminum film 13 is formed, the Μn metal ions are implanted into the surface, and the ion implantation process is performed on the aluminum film 13 to form the ion implantation film 15. 099142966 Form number Α0101

頁/共9頁 0992074466-0 201224166 [0023] 所述的離子注入過程係:採用一離子注入機(圖未示) ,將真空濺射鋁膜13的鋁或鋁合金基體11置於該離子注 入機的真空室中,該離子注入機將Μη金屬進行電離,使 其產生Μ η金屬離子蒸氣,並經高壓電場加速使該Μ η金屬 離子蒸氣形成具有幾萬甚至幾百萬電子伏特能量的Μη離 子束,射入鋁膜13的表面,最終於該鋁膜13的表面沉積 形成主要含有Μη金屬離子的離子注入膜15。 [0024] 本實施例中注入所述Μη離子的參數為:真空度為lx l(T4Pa,離子源電壓為30~100kV,離子束流強度為 0. l~5mA,控制Μη離子注入劑量在lxl016ions/cm2到lx 1018ions/cm2 (離子數/平方釐米)之間。本發明較佳實 施方式的殼體10的製造方法,在鋁或鋁合金基體11上依 次形成鋁膜13和離子注入膜15。該鋁膜13、離子注入膜 15組成的複合膜層顯著地提高了所述殼體10的耐腐蝕性 ,且該製造工藝簡單、幾乎無環境污染。 【圖式簡單說明】 [0025] 圖1為本發明較佳實施方式殼體的剖視示意圖。 【主要元件符號說明】 [0026] 殼體:10 [0027] 鋁或鋁合金基體:11 [0028] 鋁膜:13 [0029] 離子注入膜:15 099142966 表單編號A0101 第6頁/共9頁 0992074466-0Page / 9 pages 0992074466-0 201224166 [0023] The ion implantation process is performed by placing an aluminum or aluminum alloy substrate 11 of the vacuum sputtered aluminum film 13 on the ion implantation using an ion implanter (not shown). In the vacuum chamber of the machine, the ion implanter ionizes the Μn metal to generate Μη metal ion vapor, and accelerates by the high voltage electric field to form the Μη metal ion vapor to form Μη having an energy of tens of thousands or even millions of electron volts. The ion beam is incident on the surface of the aluminum film 13, and finally an ion implantation film 15 mainly containing Mn metal ions is deposited on the surface of the aluminum film 13. [0024] The parameters for injecting the Μη ions in the embodiment are: a vacuum degree of lx l (T4Pa, an ion source voltage of 30 to 100 kV, an ion beam intensity of 0. l~5 mA, and a controlled Μn ion implantation dose at lxl016ions Between /cm2 and lx 1018ions/cm2 (number of ions/cm 2 ). In the method of manufacturing the casing 10 of the preferred embodiment of the present invention, the aluminum film 13 and the ion implantation film 15 are sequentially formed on the aluminum or aluminum alloy substrate 11. The composite film layer composed of the aluminum film 13 and the ion implantation film 15 remarkably improves the corrosion resistance of the casing 10, and the manufacturing process is simple and almost free from environmental pollution. [Simplified Schematic] [0025] FIG. BRIEF DESCRIPTION OF THE DRAWINGS A cross-sectional view of a housing according to a preferred embodiment of the present invention. [Description of Main Components] [0026] Housing: 10 [0027] Aluminum or Aluminum Alloy Substrate: 11 [0028] Aluminum Film: 13 [0029] Ion Implantation Film :15 099142966 Form No. A0101 Page 6 of 9 0992074466-0

Claims (1)

201224166 七、申請專利範圍: 1 . 一種殼體,包括鋁或鋁合金基體,其改良在於:該殼體還 包括依次形成於該鋁或鋁合金基體上的鋁膜及離子注入膜 ,所述鋁膜以磁控濺射鍍膜法形成,所述離子注入膜中主 要含有Μη金屬離子。 2 .如申請專利範圍第1項所述之殼體,其中所述鋁膜的厚度 為 0·5~6.0#πι。 3.如申請專利範圍第1項所述之殼體,其中所述離子注入膜 的厚度為100〜2000nm。 〇 4 . 一種殼體的製造方法,其包括如下步驟: 提供鋁或鋁合金基體; 於該鋁或鋁合金基體的表面磁控濺射形成鋁膜; 於該鋁膜上注入Μη金屬離子,形成主要含有Μη金屬離子 的離子注入膜。 5. 如申請專利範圍第4項所述之殼體的製造方法,其中磁控 濺射所述鋁膜的工藝參數為:以氬氣為工作氣體,其流量 q 為50〜300sccm,對基體加偏壓為-100〜-400V,設置靶 材功率為2~12kw,沉積時間為5~360min。 6. 如申請專利範圍第4項所述之殼體的製造方法,其中形成 離子注入膜的工藝參數為:將形成有鋁膜的鋁或鋁合金基 體置於離子注入機中,抽真空該離子注入機至真空度為lx 10_4Pa,離子源電壓為30~100kV,離子束流強度為 0. 1 ~5mA,控制Μη金屬離子注入劑量在1 xl 016 ions/cm2 到 lxl018ions/cm2之間。 7 .如申請專利範圍第4項所述之殼體的製造方法,其中所述 099142966 表單編號A0101 第7頁/共9頁 0992074466-0 201224166 殼體的製造方法還包括在沉積所述鋁膜之前對鋁或鋁合金 基體進行電漿清洗的步驟。 099142966 表單編號A0101 第8頁/共9頁 0992074466-0201224166 VII. Patent application scope: 1. A casing comprising an aluminum or aluminum alloy substrate, the improvement comprising: the casing further comprising an aluminum film and an ion implantation film sequentially formed on the aluminum or aluminum alloy substrate, the aluminum The film is formed by a magnetron sputtering coating method, and the ion implantation film mainly contains Mn metal ions. 2. The casing of claim 1, wherein the thickness of the aluminum film is from 0.5 to 6.0 #πι. 3. The casing according to claim 1, wherein the ion implantation membrane has a thickness of 100 to 2000 nm. 〇4. A method of manufacturing a casing, comprising the steps of: providing an aluminum or aluminum alloy substrate; forming an aluminum film by magnetron sputtering on a surface of the aluminum or aluminum alloy substrate; and injecting Mn metal ions onto the aluminum film to form An ion implantation membrane mainly containing Μη metal ions. 5. The method of manufacturing a casing according to claim 4, wherein the process parameter of magnetron sputtering the aluminum film is: using argon as a working gas, the flow rate q is 50 to 300 sccm, and adding to the substrate The bias voltage is -100~-400V, the target power is set to 2~12kw, and the deposition time is 5~360min. 6. The method of manufacturing a casing according to claim 4, wherein the process parameter for forming the ion implantation membrane is: placing an aluminum or aluminum alloy substrate formed with an aluminum film in an ion implanter, and vacuuming the ion The injection machine has a vacuum degree of lx 10_4 Pa, an ion source voltage of 30 to 100 kV, and an ion beam current intensity of 0.1 to 5 mA, and the control Μη metal ion implantation dose is between 1 xl 016 ions/cm 2 and lxl018ions/cm 2 . 7. The method of manufacturing a casing according to claim 4, wherein the method of manufacturing the casing further comprises: before depositing the aluminum film, the method of manufacturing the casing of the invention of claim 4, wherein the method of manufacturing the casing further comprises: 099142966, Form No. A0101, No. 7/9: 0992074466-0 201224166 A step of plasma cleaning an aluminum or aluminum alloy substrate. 099142966 Form No. A0101 Page 8 of 9 0992074466-0
TW99142966A 2010-12-09 2010-12-09 Housing and method for making the same TWI415951B (en)

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