201223325 發明說明： 【發明所屬之技術領域】 [0001] [0002] Ο Q [0003] 本發明係有關一種有機發光二極體之結構，尤指一種 具高量子效應的有機發光層結構。 [先前技術] 由於有機發光二極體 (Organiclightemittingdiode ; OLED)具備自發光 、厚度薄、反應速度快、視角廣、解析度佳、高亮度、 可用於撓曲性面板及使用溫度範圍廣等多項優點，被認 為繼薄膜型液晶顯示器（Th infilm transistorli-quidcrystaldisplay ; TFT-LCD)為新一代平面顯示 器技術，而該有機發光二極體（0LED)的發光原理是利 用材料的特性，將電子電洞在發光層上結合，產生的能 量將發光分子由基態提昇至激發態，電子由激發態降回 基態時，其能量以波的形式釋出，因而達到有不同波長 的發光元件的產生。 有機發光二極體發展迄今，已有許多相關改良0LED發 光層促進發光效率的專利被提出，例如中華民國專利第 1236174號之一種有機無機發光二極體之結構，包括：一 基材；一第一電極位於上述基材上；一有機無機發光層 位於上述第一電極上，且此有機無機發光層包含複數個 有機無機複合量子點分散於一高分子中，且每一有機無 機複合量子點包括一ZnX(X係擇自於S、Se、Te與其組合 物所組成之族群中）量子點與一有機分子包覆該量子點表 面；以及一第二電極位於上述有機無機發光層上。 099140517 表單編號A0101 第3頁/共10頁 0992070565-0 201223325 [0004] [0005] [0006] [0007] 而中華民國專利第5206 1 2號中，也揭示一種有機發 光裝置，其包括一塊基板，位於該基板上的一個陽極與 一個陰極；位於該陽極與陰極之間的發光層，其中該發 光層包括一種主體與至少一種摻合劑；該發光層的主體 係經選擇以包括一種固態有機材料，該材料包括至少兩 種組份之混合物，其中.該混合物的第一組份係一種可以 傳送電子與電洞二者的化合物，而且基本上無極性；而 該混合物的第二組份係一種有機化合物，其極性大於第 一組份；而且選擇該發光層的摻合劑，以自該發光裝置 產生光。 由上述可知，提高發光效率為研究OLED的重要課題， 然而如何以低成本的方式來提升發光效率，滿足高亮度 的需求，為亟需克服的課題。 【發明内容】 爰是，本發明之主要目的在於揭露一種具高發光效率 的發光二極體，以滿足高亮度的需求。 本發明為一種多層摻雜型有機發光二極體之結構，其 包括有一基板、一陽極層、一電洞傳輸層、一多層摻雜 有機發光層、一電子傳輸層、一電子注入層與一金屬陰 極層，其中該陽極層形成於該基板上，該電洞傳輸層形 成於該陽極層上，而該多層掺雜有機發光層形成於該電 洞傳輸層上，且該多層摻雜有機發光層經複數次的薄膜 沉積與摻雜而形成，又該電子傳輸層形成於該多層掺雜 有機發光層上，該電子注入層形成於該電子傳輸層上， 該金屬陰極層形成於該電子注入層上。 099140517 表單編號A0101 第4頁/共10頁 0992070565-0 201223325 [0008] [0009] ❹201223325 DESCRIPTION OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION [0001] The present invention relates to a structure of an organic light-emitting diode, and more particularly to an organic light-emitting layer structure having a high quantum effect. [Prior Art] Organic Light Emitting Diodes (OLEDs) have many advantages such as self-luminous, thin thickness, fast response, wide viewing angle, good resolution, high brightness, flexibility for flexible panels, and wide temperature range. It is believed that thin film liquid crystal display (TFT-LCD) is a new generation of flat panel display technology, and the principle of light emission of the organic light emitting diode (0LED) is to utilize the characteristics of materials to place electron holes in The light-emitting layer combines, and the generated energy raises the luminescent molecules from the ground state to the excited state. When the electrons are returned from the excited state to the ground state, the energy is released in the form of waves, thereby achieving the generation of light-emitting elements having different wavelengths. Development of Organic Light-Emitting Diodes To date, many patents have been proposed for improving the luminous efficiency of improved OLED light-emitting layers, such as the structure of an organic-inorganic light-emitting diode of the Republic of China Patent No. 1236174, including: a substrate; An organic phosphor layer is disposed on the first electrode, and the organic phosphor layer comprises a plurality of organic-inorganic composite quantum dots dispersed in a polymer, and each of the organic-inorganic composite quantum dots comprises A ZnX (X series is selected from the group consisting of S, Se, Te and its composition) quantum dots and an organic molecule coat the surface of the quantum dot; and a second electrode is located on the organic inorganic light-emitting layer. 099140517 Form No. A0101 Page 3 of 10 0992070565-0 201223325 [0004] [0006] [0007] In the Republic of China Patent No. 5206 1 2, an organic light-emitting device including a substrate is also disclosed. An anode and a cathode on the substrate; a light-emitting layer between the anode and the cathode, wherein the light-emitting layer comprises a body and at least one dopant; the main system of the light-emitting layer is selected to include a solid organic material, The material comprises a mixture of at least two components, wherein the first component of the mixture is a compound that transports both electrons and holes, and is substantially non-polar; and the second component of the mixture is an organic a compound having a polarity greater than that of the first component; and a dopant of the luminescent layer is selected to produce light from the illuminating device. As can be seen from the above, improving the luminous efficiency is an important subject for studying OLEDs. However, how to improve the luminous efficiency in a low-cost manner and satisfy the demand for high brightness is an urgent problem to be overcome. SUMMARY OF THE INVENTION Therefore, the main object of the present invention is to disclose a light-emitting diode having high luminous efficiency to meet the demand for high brightness. The present invention is a multilayer doped organic light-emitting diode structure comprising a substrate, an anode layer, a hole transport layer, a multilayer doped organic light-emitting layer, an electron transport layer, an electron injection layer and a metal cathode layer, wherein the anode layer is formed on the substrate, the hole transport layer is formed on the anode layer, and the multi-layer doped organic light-emitting layer is formed on the hole transport layer, and the multilayer is doped organic The light-emitting layer is formed by a plurality of thin film deposition and doping, and the electron transport layer is formed on the multi-layer doped organic light-emitting layer, the electron injection layer is formed on the electron transport layer, and the metal cathode layer is formed on the electron On the injection layer. 099140517 Form No. A0101 Page 4 of 10 0992070565-0 201223325 [0008] [0009] ❹
099140517 據此，構成多層摻雜型有機發光二極體之結構，由於 該多層摻雜有機發光層具較佳的量子效應，因而可提升 有機發光二極體元件之發光效率，來增加發光亮度，滿 足高亮度的需求。 【實施方式】 有關本發明之詳細說明及技術内容，現就配合圖式說 明如下： 請參閱「圖1」所示，本發明為一種多層摻雜型有機 發光二極體之結構，其包括有_一基板10、一陽極層20、 一電洞傳輸層30、一多層推雜有機發光層40、一電子傳 輸層50、一電子注入層60與一金屬陰極層70，其中該基 板10的材質可以為玻璃、高分子、陶瓷與金屬的任一種 ，該陽極層20形成於該基板10上，該電洞傳輸層30形成 於該陽極層20上，而該多層摻雜有機發光層40形成於該 電洞傳輸層30上，且該多層摻雜有機發光層40經複數次 的薄膜沉積與摻雜而形成，又該電子傳輸層50形成於該 多層摻雜有機發光層40上，該電子注入層60形成於該電 子傳輸層50上，該金屬陰極層70形成於該電子注入層60 上。 該多層摻雜有機發光層40的薄膜沉積的次數為選自 3〜15次為較佳。且該多層摻雜有機發光層40較佳的厚度 為10奈米到120奈米。請參閱「圖2」所示，又該多層摻 雜有機發光層40可利用主發光體41(HostEmitter)、客 發光體42 (Guest Emitter)以間斷性掺雜方式共蒸鑛完 成。並該多層摻雜有機發光層40的主發光體41、客發光 體42可以為選自螢光主體材料-螢光客體材料摻雜、螢光 表單編號A0101 第5頁/共10頁 0992070565-0 201223325 主體材料-磷光客體材料摻雜、磷光主體材料-磷光客體 材料摻雜、磷光主體材料-螢光客體材料摻雜的任一種。According to the structure of the multilayer doped organic light-emitting diode, since the multilayer doped organic light-emitting layer has a better quantum effect, the light-emitting efficiency of the organic light-emitting diode element can be improved to increase the light-emitting brightness. Meet the needs of high brightness. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The detailed description and technical contents of the present invention will now be described with reference to the following drawings: Referring to FIG. 1 , the present invention is a multilayer doped organic light-emitting diode structure including a substrate 10, an anode layer 20, a hole transport layer 30, a multilayer dopant organic light-emitting layer 40, an electron transport layer 50, an electron injection layer 60 and a metal cathode layer 70, wherein the substrate 10 The material may be any one of glass, polymer, ceramic and metal. The anode layer 20 is formed on the substrate 10, the hole transport layer 30 is formed on the anode layer 20, and the multilayer doped organic light-emitting layer 40 is formed. On the hole transport layer 30, the multi-layer doped organic light-emitting layer 40 is formed by a plurality of thin film deposition and doping, and the electron transport layer 50 is formed on the multi-layer doped organic light-emitting layer 40. An injection layer 60 is formed on the electron transport layer 50, and the metal cathode layer 70 is formed on the electron injection layer 60. The number of times of film deposition of the multilayer doped organic light-emitting layer 40 is preferably selected from 3 to 15 times. The multilayer doped organic light-emitting layer 40 preferably has a thickness of from 10 nm to 120 nm. Referring to Fig. 2, the multilayer doped organic light-emitting layer 40 can be co-steamed by intermittent doping using a host illuminator 41 (Host Emitter) and a guest emitter 42 (Guest Emitter). The main illuminator 41 and the guest illuminant 42 of the multi-layer doped organic luminescent layer 40 may be selected from the group consisting of fluorescent host materials - fluorescent guest material doping, fluorescent form number A0101, page 5 / 10 pages 0992070565-0 201223325 Host material - Phosphorescent guest material doping, phosphorescent host material - phosphorescent guest material doping, phosphorescent host material - fluorescent guest material doping either.
茲列舉一實施例，說明如下，若該多層摻雜有機發光 層40為白光發光，則主發光體41與客發光體42可使用藍 色螢光主體材料與黃色螢光客體材料之摻雜。其中藍色 螢光主體材料為TBADN (2-Tert-butyl-9,l〇-di(naphth-2-yl)anthracene )，黃色螢光客體材料為Rubrene( (5, 6，11，12)-Tetraphenylnaphthacene )。且該多 層摻雜有機發光層40的主發光體41藍色螢光主體材料 TBADN每層厚度為4奈米，而客發光體42為TBADN摻雜黃 色螢光客體材料Rubrene構成，客發光體42每層厚度為1 奈米，Rubrene之摻雜濃度為13%，主發光體41及客發 光體42依序經6次共蒸鍍完成，達到該多層摻雜有機發光 層40之總厚度為30奈米。 如上所述，本發明藉由多層掺雜的方式來增加量子效 應，透過主發光體41與客發光體42間斷性摻雜方式來製 成該多層摻雜有機發光層40，因而可提升有機發光二極 體元件之發光效率，來增加發光亮度，滿足高亮度的需 求。 惟以上所述者，僅為本發明之較佳實施例而已，當不 能以之限定本發明實施之範圍，即大凡依本發明申請專 利範圍所作之均等變化與修飾，皆應仍屬本發明專利涵 蓋之範圍内。 【圖式簡單說明】 [0010] 圖1，係本發明之構造示意圖。 0992070565-0 099140517 表單編號A0101 第6頁/共10頁 201223325 [0011] 圖2，係本發明之多層摻雜有機發光層構造示意圖。 【主要元件符號說明】 [0012] 10 :基板 [0013] 20 :陽極層 [0014] 30 :電洞傳輸層 [0015] 40:多層摻雜有機發光層 [0016] 41 :主發光體As an example, it is explained that if the multilayer doped organic light-emitting layer 40 is white light-emitting, the main light-emitting body 41 and the guest light-emitting body 42 can be doped with a blue fluorescent host material and a yellow fluorescent guest material. The blue fluorescent host material is TBADN (2-Tert-butyl-9, l〇-di (naphth-2-yl) anthracene), and the yellow fluorescent guest material is Rubrene ((5, 6, 11, 12)- Tetraphenylnaphthacene ). The main illuminant 41 of the multi-layer doped organic luminescent layer 40 has a thickness of 4 nm per layer of the blue fluorescent host material TBADN, and the guest illuminant 42 is composed of a TBADN doped yellow fluorescent guest material Rubrene, and the guest illuminant 42 The thickness of each layer is 1 nm, the doping concentration of Rubrene is 13%, and the main illuminant 41 and the guest illuminant 42 are sequentially subjected to 6 times of co-evaporation, and the total thickness of the multi-layer doped organic luminescent layer 40 is 30. Nano. As described above, the present invention increases the quantum effect by means of multi-layer doping, and the multilayer doped organic light-emitting layer 40 is formed by intermittently doping the main illuminant 41 and the guest illuminant 42 to enhance the organic luminescence. The luminous efficiency of the diode element increases the brightness of the light to meet the demand for high brightness. However, the above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the equivalent variation and modification of the scope of the patent application of the present invention should still belong to the present invention. Within the scope of coverage. BRIEF DESCRIPTION OF THE DRAWINGS [0010] FIG. 1 is a schematic view showing the configuration of the present invention. 0992070565-0 099140517 Form No. A0101 Page 6 of 10 201223325 [0011] FIG. 2 is a schematic view showing the structure of a multilayer doped organic light-emitting layer of the present invention. [Major component symbol description] [0012] 10: substrate [0013] 20: anode layer [0014] 30: hole transport layer [0015] 40: multilayer doped organic light-emitting layer [0016] 41: main illuminant
[0017] 42 :客發光體 [0018] 50 :電子傳輸層 [0019] 60 :電子注入層 [0020] 70:金屬陰極層[0017] 42: guest illuminant [0018] 50: electron transport layer [0019] 60: electron injection layer [0020] 70: metal cathode layer
099140517 表單編號A0101 第7頁/共10頁 0992070565-0099140517 Form No. A0101 Page 7 of 10 0992070565-0