CN103258965B - A kind of thin-film packing structure of top-illuminating OLED device and preparation method thereof - Google Patents
A kind of thin-film packing structure of top-illuminating OLED device and preparation method thereof Download PDFInfo
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Abstract
The invention discloses the thin-film packing structure of a kind of top-illuminating OLED device, including substrate and reflection anode, hole transmission layer, luminescent layer, electron transfer layer, semitransparent cathode and the thin-film encapsulation layer being sequentially overlapped on substrate, also include encapsulating cushion, described encapsulation cushion is arranged between semitransparent cathode and thin-film encapsulation layer, it is 1 10nm for a layer thickness, glows, green glow, blue light or the organic molecule class fluorescence luminescent material of gold-tinted；The invention also discloses the preparation method of this encapsulating structure.Encapsulation cushion set by the present invention, on the one hand by absorbing the light of the first spectrum from top emission OLED device luminescent layer and launching the light of the second spectrum, it is ensured that device has high excitation；On the other hand, when decreasing thin-film package, plasma and sputtering particle are to electrode and the damage of luminescent layer, improve yields；Present invention and preparation method thereof, principle is simple, easy to operate, it is simple in the field of business promote the use of.
Description
Technical field
The invention belongs to field of display, be specifically related to thin-film packing structure of a kind of top-illuminating OLED device and preparation method thereof.
Background technology
OLED has the feature such as active illuminating, low, the power saving of voltage requirements, adds that reaction is fast, lightweight, thickness is thin, structure
Simply, the advantage such as with low cost, possess the incomparable advantage of LCD, just progressing into main flow display market.
Current OLED, its white light is obtained by mixing generally by two primary colours or three primary colours, the most all uses multiple
Luminescent layer (multiple emissive layers), the luminescent layer that adulterates (multiple dopants emissive layers) structure more, it
All exist because of each luminescent layer between contact interface, contact berrier and each luminescent layer between decay of luminescence different and cause device
The problems such as the significantly decay in part efficiency and life-span.
Thin-film package has multiple, currently used more be that the physics such as Plasma-activated Chemical Vapor Deposition (PECVD) and sputter coating sink
Area method, on the one hand their preparation technology temperature is higher, has exceeded the tolerance range of OLED；On the other hand plasma
Body and sputtering particle have the biggest damage to organic material or metal electrode, and current encapsulation technology temporarily cannot solve this
Problem.
Summary of the invention
It is an object of the invention to overcome the problems referred to above of the prior art, it is provided that a kind of simple in construction, last a long time, photochromic more
Pure and to electrode and the luminescent layer thin-film packing structure of top emission OLED device with protective effect and preparation method thereof.
For solve above-mentioned technical problem, the present invention by the following technical solutions:
A kind of thin-film packing structure of top-illuminating OLED device, the reflection anode including substrate and being sequentially overlapped on substrate, sky
Cave transport layer, luminescent layer, electron transfer layer, semitransparent cathode and thin-film encapsulation layer, also include encapsulating cushion, described encapsulation
Cushion is arranged between semitransparent cathode and thin-film encapsulation layer.
Further, described encapsulation cushion be glow, green glow, blue light or the organic molecule class fluorescence luminescent material of gold-tinted.
Further, the fluorescence luminescent material glowed described in is coumarin, aromatic compound and derivant thereof.
Further, described in the fluorescence luminescent material that glows be DCJ, DCJT, DCJTB, ER-53, DCM, TDCM,
TIN、MBIN、DCM2、DCJTI、(PPA)(PSA)Pe、ACEN1、ACEN2、ACEN3、ACEN4、D-CN、
NPAFN, BSN, BZTA2, TPZ, NPAMLMe, DPP, PAAA, asym-TPP, DMPDPP and DBP.
Further, the fluorescence luminescent material of described green light is coumarin derivative, quinacridone and derivant thereof, many cyclophanes
Fragrant race hydrocarbon and their derivative, the green-emitting fluorescent alloy of 1H-pyrazolo [3,4-b] quinoxaline class.
Further, the fluorescence luminescent material of described green light is TPBA, QA, DMQA, DEQ, PAH, PAQ-Net.
Further, the fluorescence luminescent material of described blue light-emitting be TBP, TPP, DSA, DSA-Ph, BD-1, BD-2,
BD-3。
Further, the fluorescence luminescent material of described Yellow light-emitting low temperature is DCJP, Rubrene, DPPO.
Further, the thickness of described encapsulation cushion is 1-10nm.
Further, the preparation method of the thin-film packing structure of described top-illuminating OLED device, comprise the following steps:
Step 1 uses hot vapour deposition method by reflection anode, hole transmission layer, luminescent layer, electron transfer layer, semitransparent cathode successively
Prepare to substrate；
Step 2 uses hot vapour deposition method preparation encapsulation cushion in the semitransparent cathode plated；
Step 3 uses Plasma Enhanced Chemical Vapor Deposition (PECVD) to prepare one layer of polymeric thin-film encapsulation layer on encapsulation cushion；
Step 4 uses low-power sputtering method to prepare one layer of inorganic compound thin film encapsulated layer, a layers of polymer on polymer encapsulation layer
Thing thin-film encapsulation layer constitutes thin film encapsulated layer together with one layer of inorganic compound thin film encapsulated layer；
Step 3-4 is repeated 1 to 10 time by step 5, completes encapsulation.
Compared with prior art, the invention has the beneficial effects as follows:
First, the encapsulation cushion set by thin-film packing structure of described top-illuminating OLED device absorbs from top emitting
The light of the first spectrum of OLED luminescent layer also launches the light of the second spectrum, and the luminescence to OLED is finely adjusted,
On the one hand ensure that device has high excitation, it is ensured that the quality of the colourity that device is overall；On the other hand, for the OLED that emits white light
Device, acts on based on this fine setting, use single light-emitting layer coordinate with encapsulation cushion of the present invention i.e. can reach traditional multiple
Luminescent layer, the illumination effect of the luminous layer structure that adulterates, it is to avoid multi-luminescent layer causes because the decay of different luminescent materials is different more
The problems such as device color coordinate drift after a period of operation is relatively big and luminous efficiency, life-span be shorter, and simplify production
Technique, reduces production cost；
Secondly, when this encapsulation cushion decreases thin-film package, plasma and sputtering particle are to electrode and the damage of luminescent layer, carry
Rate of good quality rate；
Thin-film packing structure of top-illuminating OLED device of the present invention and preparation method thereof, principle is simple, easy to operate, just
Promote the use of in the field of business.
Accompanying drawing explanation
Fig. 1 is the thin-film packing structure schematic diagram of the emitting OLED-device in the embodiment of the present invention.
Detailed description of the invention
In order to make the purpose of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, to this
Bright it is further elaborated.Should be appreciated that specific embodiment described herein, and need not only in order to explain the present invention
In limiting the present invention.
Embodiment 1
The thin-film packing structure of the top-illuminating OLED device in the present embodiment, as described in Figure 1, including substrate 1 be sequentially overlapped
Reflection anode 2, hole transmission layer 3, luminescent layer 4, electron transfer layer 5, semitransparent cathode 6 and thin-film encapsulation layer 8 on substrate 1,
Also including encapsulating cushion 7, described encapsulation cushion 7 is arranged between semitransparent cathode 6 and thin-film encapsulation layer 8.
Wherein, encapsulation cushion 7 for thickness be 1nm, the fluorescence luminescent material that glows, as coumarin, aromatic compound and
Its derivant.
The preparation method of the thin-film packing structure of top-illuminating OLED device described in the present embodiment, comprises the following steps:
Step 1 uses hot vapour deposition method by reflection anode 2, hole transmission layer 3, luminescent layer 4, electron transfer layer 5, translucent the moon
Pole 6 is sequentially prepared to substrate 1；
Step 2 uses hot vapour deposition method preparation encapsulation cushion 7 in the semitransparent cathode 6 plated；
Step 3 uses Plasma Enhanced Chemical Vapor Deposition (PECVD) to prepare one layer of polymeric thin-film encapsulation layer on encapsulation cushion 7；
Step 4 uses low-power sputtering method to prepare one layer of inorganic compound thin film encapsulated layer, a layers of polymer on polymer encapsulation layer
Thing thin-film encapsulation layer constitutes thin film encapsulated layer 8 together with one layer of inorganic compound thin film encapsulated layer；
Step 3-4 is repeated 1 times by step 5, completes encapsulation.
Embodiment 2
The thin-film packing structure of the top-illuminating OLED device in the present embodiment, its structure is with embodiment 1, as shown in Figure 1.
The encapsulation cushion 7 of the thin-film packing structure of described top-illuminating OLED device for thickness be 3nm, the fluorescence of green light sends out
Luminescent material, as coumarin derivative, quinacridone and derivant thereof, polycyclic aromatic hydrocarbons and derivant thereof,
The green-emitting fluorescent alloy of 1H-pyrazolo [3,4-b] quinoxaline class.
The preparation method of the thin-film packing structure of top-illuminating OLED device described in the present embodiment, comprises the following steps:
Step 1 uses hot vapour deposition method by reflection anode 2, hole transmission layer 3, luminescent layer 4, electron transfer layer 5, translucent the moon
Pole 6 is sequentially prepared to substrate 1；
Step 2 uses hot vapour deposition method preparation encapsulation cushion 7 in the semitransparent cathode 6 plated；
Step 3 uses Plasma Enhanced Chemical Vapor Deposition (PECVD) to prepare one layer of polymeric thin-film encapsulation layer on encapsulation cushion 7；
Step 4 uses low-power sputtering method to prepare one layer of inorganic compound thin film encapsulated layer, a layers of polymer on polymer encapsulation layer
Thing thin-film encapsulation layer constitutes thin film encapsulated layer 8 together with one layer of inorganic compound thin film encapsulated layer；
Step 3-4 is repeated 3 times by step 5, completes encapsulation.
Embodiment 3
The thin-film packing structure of the top-illuminating OLED device in the present embodiment, its structure is with embodiment 1, as shown in Figure 1.
The encapsulation cushion 7 of the thin-film packing structure of this top-illuminating OLED device described is fluorescence that thickness is 6nm, blue light-emitting
Luminescent material, such as TBP, TPP, DSA, DSA-Ph, BD-1, BD-2, BD-3.
The preparation method of the thin-film packing structure of described top-illuminating OLED device, comprises the following steps:
Step 1 uses hot vapour deposition method by reflection anode 2, hole transmission layer 3, luminescent layer 4, electron transfer layer 5, translucent the moon
Pole 6 is sequentially prepared to substrate 1；
Step 2 uses hot vapour deposition method preparation encapsulation cushion 7 in the semitransparent cathode 6 plated；
Step 3 uses Plasma Enhanced Chemical Vapor Deposition (PECVD) to prepare one layer of polymeric thin-film encapsulation layer on encapsulation cushion 7；
Step 4 uses low-power sputtering method to prepare one layer of inorganic compound thin film encapsulated layer, a layers of polymer on polymer encapsulation layer
Thing thin-film encapsulation layer constitutes thin film encapsulated layer 8 together with one layer of inorganic compound thin film encapsulated layer；
Step 3-4 is repeated 6 times by step 5, completes encapsulation.
Embodiment 4
The thin-film packing structure of the top-illuminating OLED device in the present embodiment, its structure is with embodiment 1, as shown in Figure 1.
The encapsulation cushion 7 of the thin-film packing structure of this top-illuminating OLED device for thickness be 10nm, the fluorescence of Yellow light-emitting low temperature sends out
Luminescent material, such as DCJP, Rrubrene, DPPO.
The preparation method of the thin-film packing structure of described top-illuminating OLED device, comprises the following steps:
Step 1 uses hot vapour deposition method by reflection anode 2, hole transmission layer 3, luminescent layer 4, electron transfer layer 5, translucent the moon
Pole 6 is sequentially prepared to substrate 1；
Step 2 uses hot vapour deposition method preparation encapsulation cushion 7 in the semitransparent cathode 6 plated；
Step 3 uses Plasma Enhanced Chemical Vapor Deposition (PECVD) to prepare one layer of polymeric thin-film encapsulation layer on encapsulation cushion 7；
Step 4 uses low-power sputtering method to prepare one layer of inorganic compound thin film encapsulated layer, a layers of polymer on polymer encapsulation layer
Thing thin-film encapsulation layer constitutes thin film encapsulated layer 8 together with one layer of inorganic compound thin film encapsulated layer；
Step 3-4 is repeated 10 times by step 5, completes encapsulation.
Although reference be made herein to invention has been described for the multiple explanatory embodiment of the present invention, however, it is to be understood that ability
Field technique personnel can be designed that a lot of other amendments and embodiment, and these amendments and embodiment will fall in disclosure
Spirit and spirit within.
Claims (7)
1. a thin-film packing structure for top-illuminating OLED device, anti-be sequentially overlapped on substrate (1) including substrate
Shining sun pole, hole transmission layer, luminescent layer, electron transfer layer, semitransparent cathode and thin-film encapsulation layer, it is characterised in that: also
Including encapsulation cushion, described encapsulation cushion is arranged between semitransparent cathode and thin-film encapsulation layer；Described encapsulation cushion
For glowing, green glow, blue light or the organic molecule class fluorescence luminescent material of gold-tinted；The described fluorescence luminescent material glowed
For coumarin, aromatic compound and derivant thereof；The thickness of described encapsulation cushion is 1-10nm.
The thin-film packing structure of top-illuminating OLED device the most according to claim 1, it is characterised in that: described rubescent
The fluorescence luminescent material of light is DCJ, DCJT, DCJTB, ER-53, DCM, TDCM, TIN, MBIN, DCM2,
Rubrene、DCJTI、(PPA)(PSA)Pe、ACEN1、ACEN2、ACEN3、ACEN4、D-CN、NPAFN、
BSN, BZTA2, BZTA2, TPZ, NPAMLMe, DPP, PAAA, Asym-TPP and DMPDPP, DBP.
The thin-film packing structure of top-illuminating OLED device the most according to claim 1, it is characterised in that: described greening
The fluorescence luminescent material of light is coumarin derivative, quinacridone and derivant thereof, polycyclic aromatic hydrocarbons and spreads out
Biological, the green-emitting fluorescent alloy of 1H-pyrazolo [3,4-b] quinoxaline class.
The thin-film packing structure of top-illuminating OLED device the most according to claim 3, it is characterised in that: described greening
The fluorescence luminescent material of light is TPBA, QA, DMQA, DEQ, PAH, PAQ-Net.
The thin-film packing structure of top-illuminating OLED device the most according to claim 1, it is characterised in that turn blue described in:
The fluorescence luminescent material of light is TBP, TPP, DSA, DSA-Ph, BD-1, BD-2, BD-3.
The thin-film packing structure of top-illuminating OLED device the most according to claim 1, it is characterised in that: described jaundice
The fluorescence luminescent material of light is DCJP, Rubrene, DPPO.
7. the preparation method of the thin-film packing structure of the top-illuminating OLED device described in any one of claim 1-6 claim,
It is characterized in that: comprise the following steps:
Step 1 uses hot vapour deposition method reflection anode, hole transmission layer, luminescent layer, electron transfer layer, semitransparent cathode to be depended on
Secondary preparation is on substrate；
Step 2 uses hot vapour deposition method preparation encapsulation cushion in the semitransparent cathode plated；
Step 3 uses Plasma Enhanced Chemical Vapor Deposition (PECVD) to prepare one layer of polymeric thin-film encapsulation layer on encapsulation cushion；
Step 4 uses low-power sputtering method to prepare one layer of inorganic compound thin film encapsulated layer on thin polymer film encapsulated layer, and one
One polymer thin-film encapsulation layer constitutes thin film encapsulated layer together with one layer of inorganic compound thin film encapsulated layer；
Step 3-4 is repeated 1 to 10 time by step 5, completes encapsulation.
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| CN106953027A (en) * | 2017-05-15 | 2017-07-14 | 京东方科技集团股份有限公司 | A kind of Organnic electroluminescent device and preparation method thereof, display device |
| CN108039421B (en) * | 2017-12-27 | 2020-05-05 | 武汉华星光电半导体显示技术有限公司 | OLED film packaging structure and packaging method |
| CN110875436B (en) * | 2018-09-04 | 2022-09-27 | 湖北尚赛光电材料有限公司 | Flexible OLED display device and preparation method thereof |
| CN110048024B (en) * | 2019-04-23 | 2021-10-08 | 北京京东方技术开发有限公司 | Display substrate, manufacturing method thereof and display device |
| CN111864532A (en) * | 2020-07-03 | 2020-10-30 | 太原理工大学 | Surface protection layer for improving stability of perovskite nanosheet laser and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1457107A (en) * | 2003-03-21 | 2003-11-19 | 清华大学 | Organic membrane field effect transistor packing method |
| CN101359721A (en) * | 2008-09-23 | 2009-02-04 | 吉林大学 | Top radiation organic EL part with optical spectrum adjustable |
| CN102598865A (en) * | 2009-11-04 | 2012-07-18 | 佳能株式会社 | Organic electroluminescent element and display including same |
| CN102945928A (en) * | 2012-12-06 | 2013-02-27 | 吉林大学 | White-light organic electroluminescent device with adjustable optical spectrum and stable chromaticity coordinate |
| CN203242670U (en) * | 2013-04-27 | 2013-10-16 | 四川虹视显示技术有限公司 | Thin film encapsulation structure of top emission OLED device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002216976A (en) * | 2001-01-15 | 2002-08-02 | Sony Corp | Light emitting element and its manufacturing method |
| US7268485B2 (en) * | 2003-10-07 | 2007-09-11 | Eastman Kodak Company | White-emitting microcavity OLED device |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1457107A (en) * | 2003-03-21 | 2003-11-19 | 清华大学 | Organic membrane field effect transistor packing method |
| CN101359721A (en) * | 2008-09-23 | 2009-02-04 | 吉林大学 | Top radiation organic EL part with optical spectrum adjustable |
| CN102598865A (en) * | 2009-11-04 | 2012-07-18 | 佳能株式会社 | Organic electroluminescent element and display including same |
| CN102945928A (en) * | 2012-12-06 | 2013-02-27 | 吉林大学 | White-light organic electroluminescent device with adjustable optical spectrum and stable chromaticity coordinate |
| CN203242670U (en) * | 2013-04-27 | 2013-10-16 | 四川虹视显示技术有限公司 | Thin film encapsulation structure of top emission OLED device |
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