CN103258965A - Thin-film encapsulation structure of top light-emitting OLED device and preparing method thereof - Google Patents

Abstract

The invention discloses a thin-film encapsulation structure of a top light-emitting OLED device. The thin-film encapsulation structure of the top light-emitting OLED device comprises a substrate, a reflecting anode, a hole transporting layer, a light-emitting layer, an electron transporting layer, a semi-transparent cathode and a thin-film encapsulation layer, wherein the reflecting anode, the hole transporting layer, the light-emitting layer, the electron transporting layer, the semi-transparent cathode and the thin-film encapsulation layer are sequentially stacked up on the substrate. The thin-film encapsulation structure of the top light-emitting OLED device further comprises an encapsulation buffering layer arranged between the semi-transparent cathode and the thin-film encapsulation layer, and the encapsulation buffering layer is a layer of organic small-molecule fluorescence-like light-emitting material which is 1-10mm in thickness and emits red light, green light, blue light or yellow light. The invention further discloses a preparing method of the thin-film encapsulation structure. On the one hand, the encapsulation buffering layer absorbs light of a first spectrum from a light-emitting layer of the top light-emitting OLED device and emits light of a second spectrum, and therefore high color purity of the device is ensured; on the other hand, damages to an electrode and the light-emitting layer by plasma and sputtering particles when thin film encapsulation is performed are reduced, and yield is enhanced. The thin-film encapsulation structure of the top light-emitting OLED device and the preparing method of the thin-film encapsulation structure are simple in principle, convenient to operate and convenient to popularize and use in the industry.

Description

Thin-film packing structure of a kind of top-illuminating OLED device and preparation method thereof

Technical field

The invention belongs to field of display, be specifically related to thin-film packing structure of a kind of top-illuminating OLED device and preparation method thereof.

Background technology

OLED has characteristics such as active illuminating, voltage requirements are low, power saving, adds that reaction is fast, in light weight, thin thickness, simple structure, advantage such as with low cost, possesses the incomparable advantage of LCD, is just progressing into main flow and is showing market.

Present OLED device, its white light generally is to mix by two primary colours or three primary colors to get, general what all adopts is multiple luminescent layer (multiple emissive layers), many doping luminescent layer (multiple dopants emissive layers) structure, and they all exist because of the difference of the decay of luminescence between the contact interface between each luminescent layer, contact berrier and each luminescent layer causes the problems such as decay significantly in device efficiency and life-span.

Thin-film package has multiple, and using more at present is physical deposition methods such as Plasma-activated Chemical Vapor Deposition (PECVD) and sputter coating, and their preparation technology's temperature has exceeded the tolerance range of OLED device than higher on the one hand; Plasma and sputtering particle have very large damage to organic material or metal electrode on the other hand, and present encapsulation technology temporarily can't address this problem.

Summary of the invention

The objective of the invention is to overcome the problems referred to above of the prior art, provide a kind of simple in structure, life-span long, photochromic purer and electrode and luminescent layer are had thin-film packing structure and preparation method thereof of the top emission OLED device of protective effect.

For solving the problems of the technologies described above, the present invention by the following technical solutions:

A kind of thin-film packing structure of top-illuminating OLED device, comprise substrate and be superimposed upon reflection anode, hole transmission layer, luminescent layer, electron transfer layer, semitransparent cathode and thin-film encapsulation layer on the substrate successively, also comprise the encapsulation resilient coating, described encapsulation resilient coating is arranged between semitransparent cathode and the thin-film encapsulation layer.

Further, described encapsulation resilient coating be glow, the organic molecule class fluorescence luminescent material of green glow, blue light or gold-tinted.

Further, the described fluorescence luminescent material that glows is cumarin, aromatic compound and derivative thereof.

Further, the described fluorescence luminescent material that glows is DCJ, DCJT, DCJTB, ER-53, DCM, TDCM, TIN, MBIN, DCM2, DCJTI, (PPA) be Pe, ACEN1, ACEN2, ACEN3, ACEN4, D-CN, NPAFN, BSN, BZTA2 (PSA), TPZ, NPAMLMe, DPP, PAAA, asym-TPP, DMPDPP and DBP.

Further, the fluorescence luminescent material of described green light is coumarin derivative, quinacridone and derivative thereof, polycyclic aromatic hydrocarbons and derivative thereof, 1H-pyrazolo[3,4-b] the green glow fluorescence alloy of quinoxaline class.

Further, the fluorescence luminescent material of described green light is TPBA, QA, DMQA, DEQ, PAH, PAQ-Net.

Further, the fluorescence luminescent material of described blue light-emitting is TBP, TPP, DSA, DSA-Ph, BD-1, BD-2, BD-3.

Further, the fluorescence luminescent material of described jaundice light is DCJP, Rubrene, DPPO.

Further, the thickness of described encapsulation resilient coating is 1-10nm.

Further, the preparation method of the thin-film packing structure of described top-illuminating OLED device may further comprise the steps:

Step 1 adopts hot vapour deposition method that reflection anode, hole transmission layer, luminescent layer, electron transfer layer, semitransparent cathode are prepared successively to substrate;

Step 2 adopts hot vapour deposition method preparation encapsulation resilient coating in the good semitransparent cathode of plating;

Step 3 adopts Plasma Enhanced Chemical Vapor Deposition (PECVD) in encapsulation resilient coating preparation one layer of polymeric thin-film encapsulation layer;

Step 4 adopts the low-power sputtering method at polymer encapsulated layer preparation one deck inorganic compound thin film encapsulated layer, and the one layer of polymeric thin-film encapsulation layer constitutes the thin film encapsulated layer with one deck inorganic compound thin film encapsulated layer;

Step 5 repeats step 3-4 1 to 10 time, finishes encapsulation.

Compared with prior art, the invention has the beneficial effects as follows:

At first, the set encapsulation resilient coating of the thin-film packing structure of described top-illuminating OLED device absorbs from the light of first spectrum of top emission OLED device luminescent layer and launches the light of second spectrum, the luminous of OLED device finely tuned, guarantee that device has high colorimetric purity on the one hand, guarantee the quality of the colourity of device integral body; On the other hand, for the OLED device that emits white light, based on this fine setting effect, adopt the individual layer luminescent layer to cooperate the illumination effect that can reach traditional multiple luminescent layer, many doping luminous layer structure with encapsulation resilient coating of the present invention, avoided multi-luminescent layer to reach luminous efficiency, life-span more greatly than problems such as weak points because of the color coordinate drift of the different devices that cause of the decay of different luminescent materials after work a period of time, and simplified production technology, reduce production costs;

Secondly, plasma and sputtering particle improved yields to the damage of electrode and luminescent layer when this encapsulation resilient coating had reduced thin-film package;

Thin-film packing structure of top-illuminating OLED device of the present invention and preparation method thereof, principle is simple, and is easy to operate, is convenient in the field of business promoting the use of.

Description of drawings

Fig. 1 is the thin-film packing structure schematic diagram of the illuminating OLED device in the embodiment of the invention.

Embodiment

In order to make purpose of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explaining the present invention, and be not used in restriction the present invention.

Embodiment 1

The thin-film packing structure of the top-illuminating OLED device in the present embodiment, as described in Figure 1, comprise substrate 1 and be superimposed upon reflection anode 2, hole transmission layer 3, luminescent layer 4, electron transfer layer 5, semitransparent cathode 6 and thin-film encapsulation layer 8 on the substrate 1 successively, also comprise encapsulation resilient coating 7, described encapsulation resilient coating 7 is arranged between semitransparent cathode 6 and the thin-film encapsulation layer 8.

Wherein, encapsulation resilient coating 7 is for thickness is 1nm, the fluorescence luminescent material that glows, as cumarin, aromatic compound and derivative thereof.

The preparation method of the thin-film packing structure of the described top-illuminating OLED device of present embodiment may further comprise the steps:

Step 1 adopts hot vapour deposition method that reflection anode 2, hole transmission layer 3, luminescent layer 4, electron transfer layer 5, semitransparent cathode 6 are prepared successively to substrate 1;

Step 2 adopts hot vapour deposition method preparation encapsulation resilient coating 7 in the good semitransparent cathode 6 of plating;

Step 3 adopts Plasma Enhanced Chemical Vapor Deposition (PECVD) in encapsulation resilient coating 7 preparation one layer of polymeric thin-film encapsulation layer;

Step 4 adopts the low-power sputtering method at polymer encapsulated layer preparation one deck inorganic compound thin film encapsulated layer, and the one layer of polymeric thin-film encapsulation layer constitutes thin film encapsulated layer 8 with one deck inorganic compound thin film encapsulated layer;

Step 5 repeats step 3-4 1 time, finishes encapsulation.

Embodiment 2

The thin-film packing structure of the top-illuminating OLED device in the present embodiment, its structure is with embodiment 1, as shown in Figure 1.

The encapsulation resilient coating 7 of the thin-film packing structure of described top-illuminating OLED device is the fluorescence luminescent material of 3nm, green light for thickness, as coumarin derivative, quinacridone and derivative thereof, polycyclic aromatic hydrocarbons and derivative thereof, 1H-pyrazolo[3,4-b] the green glow fluorescence alloy of quinoxaline class.

The preparation method of the thin-film packing structure of the described top-illuminating OLED device of present embodiment may further comprise the steps:

Step 1 adopts hot vapour deposition method that reflection anode 2, hole transmission layer 3, luminescent layer 4, electron transfer layer 5, semitransparent cathode 6 are prepared successively to substrate 1;

Step 2 adopts hot vapour deposition method preparation encapsulation resilient coating 7 in the good semitransparent cathode 6 of plating;

Step 3 adopts Plasma Enhanced Chemical Vapor Deposition (PECVD) in encapsulation resilient coating 7 preparation one layer of polymeric thin-film encapsulation layer;

Step 4 adopts the low-power sputtering method at polymer encapsulated layer preparation one deck inorganic compound thin film encapsulated layer, and the one layer of polymeric thin-film encapsulation layer constitutes thin film encapsulated layer 8 with one deck inorganic compound thin film encapsulated layer;

Step 5 repeats step 3-4 3 times, finishes encapsulation.

Embodiment 3

The thin-film packing structure of the top-illuminating OLED device in the present embodiment, its structure is with embodiment 1, as shown in Figure 1.

The encapsulation resilient coating 7 of the thin-film packing structure of described this top-illuminating OLED device is the fluorescence luminescent material of 6nm, blue light-emitting for thickness, as TBP, TPP, DSA, DSA-Ph, BD-1, BD-2, BD-3.

The preparation method of the thin-film packing structure of described top-illuminating OLED device may further comprise the steps:

Step 1 adopts hot vapour deposition method that reflection anode 2, hole transmission layer 3, luminescent layer 4, electron transfer layer 5, semitransparent cathode 6 are prepared successively to substrate 1;

Step 2 adopts hot vapour deposition method preparation encapsulation resilient coating 7 in the good semitransparent cathode 6 of plating;

Step 3 adopts Plasma Enhanced Chemical Vapor Deposition (PECVD) in encapsulation resilient coating 7 preparation one layer of polymeric thin-film encapsulation layer;

Step 4 adopts the low-power sputtering method at polymer encapsulated layer preparation one deck inorganic compound thin film encapsulated layer, and the one layer of polymeric thin-film encapsulation layer constitutes thin film encapsulated layer 8 with one deck inorganic compound thin film encapsulated layer;

Step 5 repeats step 3-4 6 times, finishes encapsulation.

Embodiment 4

The thin-film packing structure of the top-illuminating OLED device in the present embodiment, its structure is with embodiment 1, as shown in Figure 1.

The encapsulation resilient coating 7 of the thin-film packing structure of this top-illuminating OLED device is the fluorescence luminescent material of 10nm, jaundice light for thickness, as DCJP, Rrubrene, DPPO.

The preparation method of the thin-film packing structure of described top-illuminating OLED device may further comprise the steps:

Step 1 adopts hot vapour deposition method that reflection anode 2, hole transmission layer 3, luminescent layer 4, electron transfer layer 5, semitransparent cathode 6 are prepared successively to substrate 1;

Step 2 adopts hot vapour deposition method preparation encapsulation resilient coating 7 in the good semitransparent cathode 6 of plating;

Step 3 adopts Plasma Enhanced Chemical Vapor Deposition (PECVD) in encapsulation resilient coating 7 preparation one layer of polymeric thin-film encapsulation layer;

Step 4 adopts the low-power sputtering method at polymer encapsulated layer preparation one deck inorganic compound thin film encapsulated layer, and the one layer of polymeric thin-film encapsulation layer constitutes thin film encapsulated layer 8 with one deck inorganic compound thin film encapsulated layer;

Step 5 repeats step 3-4 10 times, finishes encapsulation.

Although invention has been described with reference to a plurality of explanatory embodiment of the present invention here, but, should be appreciated that those skilled in the art can design a lot of other modification and execution modes, these are revised and execution mode will drop within the disclosed principle scope and spirit of the application.

Claims (10)

1. the thin-film packing structure of a top-illuminating OLED device, comprise substrate and be superimposed upon reflection anode, hole transmission layer, luminescent layer, electron transfer layer, semitransparent cathode and thin-film encapsulation layer on the substrate 1 successively, it is characterized in that: also comprise the encapsulation resilient coating, affiliated encapsulation resilient coating is arranged between semitransparent cathode and the thin-film encapsulation layer.

2. the thin-film packing structure of top-illuminating OLED device according to claim 1 is characterized in that: described encapsulation resilient coating be glow, the organic molecule class fluorescence luminescent material of green glow, blue light or gold-tinted.

3. the thin-film packing structure of top-illuminating OLED device according to claim 2, it is characterized in that: the described fluorescence luminescent material that glows is cumarin, aromatic compound and derivative thereof.

4. the thin-film packing structure of top-illuminating OLED device according to claim 3, it is characterized in that: the described fluorescence luminescent material that glows is DCJ, DCJT, DCJTB, ER-53, DCM, TDCM, TIN, MBIN, DCM2, Rubrene, DCJTI, (PPA) be Pe, ACEN1, ACEN2, ACEN3, ACEN4, D-CN, NPAFN, BSN, BZTA2, BZTA2 (PSA), TPZ, NPAMLMe, DPP, PAAA, Asym-TPP and DMPDPP, DBP.

5. the thin-film packing structure of top-illuminating OLED device according to claim 2, it is characterized in that: the fluorescence luminescent material of described green light is coumarin derivative, quinacridone and derivative thereof, polycyclic aromatic hydrocarbons and derivative thereof, 1H-pyrazolo[3,4-b] the green glow fluorescence alloy of quinoxaline class.

6. the thin-film packing structure of top-illuminating OLED device according to claim 5, it is characterized in that: the fluorescence luminescent material of described green light is TPBA, QA, DMQA, DEQ, PAH, PAQ-Net.

7. the thin-film packing structure of top-illuminating OLED device according to claim 2, it is characterized in that: the fluorescence luminescent material of described blue light-emitting is TBP, TPP, DSA, DSA-Ph, BD-1, BD-2, BD-3.

8. the thin-film packing structure of top-illuminating OLED device according to claim 2, it is characterized in that: the fluorescence luminescent material of described jaundice light is DCJP, Rrubrene, DPPO.

9. the thin-film packing structure of top-illuminating OLED device according to claim 1, it is characterized in that: the thickness of described encapsulation resilient coating is 1-10nm.

10. the preparation method of the thin-film packing structure of the described top-illuminating OLED device of each claim of claim 1-9 is characterized in that: may further comprise the steps:

Step 1 adopts hot vapour deposition method that reflection anode, hole transmission layer, luminescent layer, electron transfer layer, semitransparent cathode are prepared successively to substrate;

Step 2 adopts hot vapour deposition method preparation encapsulation resilient coating in the good semitransparent cathode of plating;

Step 3 adopts Plasma Enhanced Chemical Vapor Deposition (PECVD) in encapsulation resilient coating preparation one layer of polymeric thin-film encapsulation layer;

Step 4 adopts the low-power sputtering method at polymer encapsulated layer preparation one deck inorganic compound thin film encapsulated layer, and the one layer of polymeric thin-film encapsulation layer constitutes the thin film encapsulated layer with one deck inorganic compound thin film encapsulated layer;

Step 5 repeats step 3-4 1 to 10 time, finishes encapsulation.

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