TW201222910A - Manufacturing method of organic thin film transistor - Google Patents

Abstract

The invention provides a manufacturing method of organic thin film transistors, which can efficiently manufacture smooth organic semiconductor layer having fewer defects. The manufacturing method of organic thin film transistors in the invention comprises the following processes: holding an organic semiconductor ink, in the solvent of which organic semiconductor materials disperses, on a flexographic printing plate (11), on the surface of which an ink holding portion with a predetermined pattern is formed, wherein a base material (10), on the surface of which an electrode is formed, adheres to the flexographic printing plate (11) to transfer the organic semiconductor ink of the ink holding portion onto the base material (10) described above; evaporating the solvent of the organic semiconductor ink after the above transfer and forming a film of an organic semiconductor layer on the base material (10).

Description

201222910 VI. Description of the Invention: [Technical Field to Which the Invention Is Ascribed] The present invention relates to a method of producing an organic-transistor. [Prior Art] In the display/centering of liquid crystal displays, organic ρτ batch_μ swimming type displays, etc.: electric drive active matrix type drive circuits such as page display or electronic paper are rotary array circuits. This crystal (hereinafter referred to as TFT) constitutes a lattice-shaped plurality of dielectric film TFTs formed on a substrate. Instead of a conventional inorganic transistor (hereinafter referred to as an organic spinner, the fine gate is insulated: there are: (a) ~ (c) shows the 'main system by the gate electrode and the machine semi-conductor; the layer is composed of the bottom Μ. g μ, + - the configuration of the transfer piece can be classified into the top gate type two patent documents' face _ It can be further classified into the top type and the bottom type (Shenzhen Sanxuan 1, 2). The following types are used for riding. (A) Top gate type organic TFr dry Y depends on the source electrode and the tantalum electrode (both Undifferentiated, both show c SC'GD' G ό'ΤΙ^ (8) Top-connected organic TFT (a kind of bottom _) sr eve on the έ base t sequentially stack gate electrode G, gate insulating layer GD, organic semiconductor layer photo Figure 3 (8);], 』 forming the source electrode and the electrodeless electrode (S / D) of the top-type component [refer to (C) bottom-connected organic TFT (the type of the bottom gate type) on the Leito B sequentially stacked free electrode G, the gate insulating layer GD, the source electrode, and the germanium. Then, the organic semiconductor layer is stacked on the channel C portion thereof. The bottom-connected element of 201222910 (refer to FIG. 3(c)). For example, an organic rotating material such as pentacene-tetracene, wherein, a polyacetylene having a higher crystallinity, or a bismuth conjugated polymer material, The yoke is cut and the material such as the plug phenophene has been attracting attention in recent years. & Shooting a linear polymer, or making a poly 3 material, dissolving and dispersing it on a flexible substrate. In the case of a scented scent, the organic semiconductor material = or a printing method such as letterpress printing is applied to the ink. [Technical literature; I [Patent Document] Patent Document 1] Japanese Patent Publication No. 28 [Patent Document 2]曰本特开2〇〇4-288836 [Invention] [The problem to be solved by the invention] The body layer ί The machine contains:] Death::13:: The method of coating forms the organic semi-conductivity reason In the thin film transistor, it is desirable to have the above-mentioned defects of the day and the day. Defects such as grain or surface roughness can be minimized. Integrated manufacturing; The purpose of the invention is to provide an organic thin germanium transistor layer. & Effectively turn to organic semi-conductors with fewer defects and smooth manufacturing. 201222910 [Technical means to solve problems] = ίί, S, the first aspect of the invention, a method for producing an organic thin film ferrule, comprising: a step of having a flexible = domain crystallization cell and a ruthenium electrode; and an organic semi-conducting source electrode plate a step of transferring the flexographic printing plate and the substrate-printed conductive ink to the source electrode and the electrode-free insulating layer of the organic electrode; "and the gate electrode of the electric body stacking In addition, in the predetermined position on the n(10) shield, the second aspect of the present invention is a type comprising: the organic semiconductor ink which is in the form of a Wei Weiwei method, and the organic semiconductor ink is transferred to the above-mentioned interlayer insulating layer to form an organic semiconductor layer. Step; to 'this = surface-like source electrode and noisy steps. hLa+conductor layer field Weiding-shaped person re-three-state system--the manufacturing method of the transistor, the step of forming the insulating layer composed of the dielectric body; stacking the source electrode on the upper layer and the 隹& a step of rubbing the electrode; transferring the organic semiconductor ink having the organic semiconductor ink held on the surface to the source electrode and the second electrode, both sc 201222910, that is, in order to solve the previously described problem The present inventors have made efforts to prevent crystal grains which are a cause of a decrease in the mobility of the carrier on the organic layer due to uneven coating (concentration difference) of the organic semiconductor ink. Then, in the process of ΐ: ί, it was found that in the step of forming an organic semi-conductor layer by using an organic semiconductor material film, the printing can be performed at a high speed and high definition, and the organic film can be greatly improved. The yield and processing efficiency of the transistor are further improved. The method for producing the organic thin film transistor according to the third aspect of the present invention is based on the knowledge of the above-mentioned knowledge. The semiconductor semiconductor ink which is dispersed in the touch towel is held on the surface of the flexible printing plate of the ink holding portion, so that the above-mentioned organic semiconductor ink can be quickly transferred. Printing (printing) ^ 匕 id part to prevent the drying of the organic semiconductor ink on the plate (concentrated outside 'because of rapid transfer', so the local concentration of organic semiconductor ink 比较 is less likely to occur. The ft of the organic semiconductor layer generates defects such as crystal grains or surface _, and efficiently forms a surface-aligned organic semiconductor layer. The wind spear is dry, the moon, the organic thin film electro-crystal The manufacturing method, in addition to being able to cut the 屮力古机 semiconductor carrier, is lying down = not causing damage to other parts, etc. “ 2 "Electrical materials are the same as _ printing, printing. Therefore, the invention has a working time 1 can be ugly process Time spent on the work (manufacturing, outside the 'film manufacturing method of the present invention, the surface of the film, the method of manufacturing the towel, 若 ΜΡ ,, if using lithography or resolution is side ~ 1270 line / 254cm two fine printing version, you can More precise control of the amount of production and retention of the above-mentioned ink holding portion and further reduction of defects such as crystal grains or surface roughness 7 201222910 Further, 'Sharp A for a flexographic printing plate such as a resin film (sheet) The hardness is set to be red, the above-mentioned appropriate hardness. Thereby, the substrate of the organic thin film electroprinting of the present invention continues to be high-definition on the substrate, and the above-mentioned flexographic printing plate can be improved. For a long time, the other is the same as that of the whole process. Something In this embodiment, the manufacturing method of the gate electrode is described as an example. The other t t bit ί ί name is reversed, and there is no function in the second.汲"Tong both sides are not the source / 汲 electrode" or simply display as "source / display ΐΐ ϊ ϊ machine TFT (component) can be used for electronic paper, electric swimming type 5 square"; The TFTs are the same, and are composed of F as shown in FIG. 1(e): electrodes 1, 1 formed on the above-mentioned neon 1G; organic semiconductor layer 2 stacked in the manner of ΐΐίί?/汲 electrodes 1, ;; Layer 3; and stacking in the gate insulating layer u The above-described organic TFT is formed in the following manner: First, as shown in FIG. 2B, the source/germanium electrode 1 is formed on the surface (top surface) of the substrate 10. , Γ, dib), after the ink (face) composed of the organic semiconductor material shown by flexographic printing on the source/germanium electrodes 1, 丨, as shown in Fig. 1 (c) The solvent in the organic semiconductor ink evaporates to form an organic semiconductor layer 2 covering the source/germanium. Then, as shown in Figure 1 (d), there is

S.201222910 The insulating layer 3 is stacked on the semiconductor layer 2, after which, as shown in the figure

A method of manufacturing an organic TFT in which a gate electrode 4 LH having a predetermined shape is formed on the gate insulating layer 3 is characterized in that: a solvent in an organic semiconductor ink is evaporated, a method is applied, and the above-described organic TFT is described in detail. Manufacturing method. (1) The source/germanium electrode forming step and the flexible processing are both gas barrier properties. The clock side or the 'brush or the like is in the form of a base == using a metal material to vaporize Fig. 1(a)). Λ $ is a pair of source electrode 1 and no electrode 1, [the butyl enamel is formed by the flexographic printing method to form the above-mentioned source/germanium electrode 1, 1) (printer If paste (conductive borrowing) This can be used without the use of 'heating on the plate to make it harden (film formation), pole 1, Γ., work to make a source with Wei Ding electric case / no electricity using source / 汲 electrode 1, r Next, there is no need for a part of the material. The material on the base is pre-applied with a resin or the like before evaporation, and the λ is formed on the substrate 10 to remove other unnecessary portions. 'There is then the secret engraving (t) organic semiconductor ink coating step is solved by dissolving the dissolved material (polymer material), and the coating is applied to the water (Ink) using a flexographic printing 2) The schematic structure diagram of the flexo printing machine on the icon. In addition, ^ is = ί性_版' 12 is the rolling wheel, 13 is the pattern wheel, is = moving '^, 15 is Wei, 16 For the ink tank. — The coating of the organic semiconductor ink contained is as shown in Figure 2. The κ organic semiconductor ink scales in the ink of the established pattern 201222910 Polymerization on the flexible printing plate u of the holding part is used as the main component of the above-mentioned linear type of ethylene-based organic solvent ί, and the body ink (Nen Bu surface sand ^^^^ paste organic half The guide is: Bu II i% = version of the clever,: Qu, is an organic ^ 2 per unit area can hold about aG5 ~ 5 () ml / m2 per stay. p Also, when the above high-definition printing The resolution of the version is not (10) &

At the time, the ink amount of the ink holding portion H formed on the surface of the plate 妓 ^ _ tear on the 1G domain): there will be a half s; ί, : line ~, there will be a turn of the ink 'rate drop: 丨 = = When the above-mentioned flexographic printing plate 11 has a hardness of less than 3 inches. The substrate 1 () is too soft and tends to be finely printed in the stencil phase. In addition, the opposite, #_ and then, the above-mentioned flexographic printing plate U relative to the above-mentioned organic semiconductor ink solvent. 201222910, the lower the degree of the better, for example, relative to the above-mentioned ethylene glycol volume change rate) (10) ~ Cong , relative to the above aroma = ί; the rate of dissolution _ conversion rate is preferably μ ~ ·. Therefore, the leader of the above-mentioned flexible printing (4), which constitutes the above-mentioned flexographic printing (4), is formed by the coating forming method of the above-described configuration (four) printing plate, basically, with the usual flexographic printing First, as shown in FIG. 2, the right and the scroll roller 13 supplied from the ink tank 16 are supplied to the flexographic printing plate 11, and the organic semiconductor is 量; i: s~ the substrate 1G and the above flexible _ plate 11 Close (: 4, | έ this ^ ===, organic semiconductor ink, such as two = ink process required for upper transfer and above and above the electrode 1, 1 ') (3) organic semiconductor layer Film forming step The substrate 1G after transfer of the conductive ink is evaporated and evaporated by a solvent or the like in an ink made of an oven or the like, as shown in FIG. 1(C), and the substrate of the organic semiconductor layer 2 of the electrode 1 and the ytterbium 10. Further, the preferred thickness of the (4) insulation is 25 to 85, and the organic electric material (insulator) is formed into the gate insulating layer 3 by the coating method in the above-mentioned layer 3 (see Fig. 1 (4)). The gate insulating paste is a non-polar, 1'-and the same type, and a material such as a non-conductive ink is transferred (printed) to the substrate 1 using a flexographic printing machine. On, add food and tender. The connector 'on the gate insulating layer 3, using a metal material, using a method such as steaming, silver 201222910 ===, etc. to form the gate electrode 4, to obtain an organic m element (the gate electrode 4 is also associated with the aforementioned source force) In the case of electrode formation, the material of the (four) printing machine, such as the brush paste (conductive ink), is transferred to the substrate 1 to heat the paste, and it can be hardened and patterned. Gate electrode 4. In addition, it is made by the steaming method to form the above-mentioned gate electrode, for example, in the following method: in the steaming and weaving of the substrate 1Q (the brakes are used in some parts of the county) The attachment removes the other portions from H', and as such, in the above-described method of manufacturing an organic TFT, the organic semiconductor ink (4) of == is held on the Ϊ flexographic printing plate U, and the ink retaining portion is abundance The ink is transferred onto the substrate 10. Therefore, the above-mentioned two: the machine is transferred (printed) to the necessary portion in a manner that is good in 1 degree, and the surface of the second, half, and body layers is less likely to generate crystal grains or surface rough wheels. = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = For a long time, i = fresh, the case. Therefore, the method of the present embodiment reduces the maintenance time and reduces the manufacturing cost. In the above embodiment, the organic tft of the top gate type is The manufacturing method for carrying out the invention can also be In the manufacture of base abuts a bottom-contact type has a case. Further, when applied to such an organic TFT, it is possible to obtain the same kind of a top gate type t said organic TFT state effect, it goes without saying Eight

12 S 201222910 ^'^The paste is explained. However, the present invention is not intended to be invoked in the following embodiments. Goode ίίΐί 巾, such as the above-mentioned implementation secret, made the _ version _ machine coating ί2ίϊ == ΐ? τ (experimental product), instead of using the inkjet method to coat the organic half-thick organic TFT (known products = factory products The substrate and organic semiconductor ink used in the organic TFTs of the inspection products and the field products are as follows: [Substrate] PET resin sheet thickness: 0.2mm [Organic semiconductor ink] Solid content: Polymer organic Semiconductor material (5 to 3 〇 wt%) = (_agent): f benzene, diphenyl benzene, tetrahydronaphthalene (registered trademark) Dryness · 3 to 50 mJPa · s In addition, the printing of the organic semiconductor ink of the above experimental product ( The specifications of the flexographic printing plate and the flexographic printing machine used for coating are as follows: [Flexible printing machine]

FC-33S (Flexible Printing Plate) made by MTtech Co., Ltd. Flexographic printing plate, which is an acrylate oligopolymer and acrylate monomer, which is a prepolymer of polyester vinegar as a prepolymer through UV irradiation of negative film. A photosensitive printing plate in which the polymerization is inhibited and the photopolymerization is initiated.

Komura tech company flexographic printing plate version thickness 2.25mm 600 line / 2.54cm aperture ratio: 5~40% hardness: 30~70. (Sharp A hardness) The swelling ratio with respect to the ink solvent: 〇·5 to 1〇% (weight change rate) 'The ink holding amount of the water retention unit: 2 ml/m2 (Adjustment range: 〇〇5 to 50 m / m 2 ) 'Ink coating pattern (1 place): square (line width 〇.lmm) [pattern wheel] 13 201222910 400 line / 2.54cm (150~600 line / 2.54cm) Pool capacity (pool volume): 2ml/m2 ( Adjustment range: 0.05 to 6 〇 ml/m2) The printing (coating) of the organic semiconductor ink of the above experimental product is carried out under the following conditions (refer to Fig. 2 for the schematic structure of the flexographic printing machine): [Flexible printing conditions] Printing speed (Printing platform movement amount): 25m/min (adjustment range: 5~3〇m / min) Textured roller speed: 12〇jpm Pattern roller-printing plate nip width: 6~7mm (Adjustment range: 1~ 15mm Between the printing plate and the substrate, the nip width is 8 to 9 mm (adjustment: 丨~2〇_ The environment of the printing processing room (at room temperature) [Drying conditions after printing] Temperature: 80. (: Time: 1 point

The organic TFT of the organic semiconductor layer formed by the flexographic printing process of the upper f processing condition has the dimensional accuracy and film thickness of the article, and the conductor layer has a smaller defect than the product. Therefore, it can be seen that the manufacturing method of the organic thin film electro-solar body can improve the yield and processing efficiency of the product [industrial availability]. It is applied to an active matrix type using a plurality of organic thin film transistors such as a flat panel display or an electronic paper. Driving circuit = [Simplified description of the drawing] 略 Ϊ 2 2 2 2 半导体 半导体 半导体 半导体 半导体 半导体 ( ( ( ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; Model 201222910, (b) is a top-mounted type, and (c) is a schematic cross-sectional view of a bottom-connected organic TFT. [Main component symbol description] 1. Γ source/汲 electrode Ink ink 2 organic semiconductor layer 3 gate insulating layer 4 gate electrode 10 substrate 11 flexible printing plate 12 rolling wheel 13 pattern roller 14 moving platform 15 squeegee 16 ink tank B Substrate G gate electrode GD gate insulating layer SC organic semiconductor layer S/D source / no electrode C channel 15

Claims (1)

201222910 VII. A patent scope: A method for manufacturing an organic thin film transistor, comprising: and an organic phase formed on a surface having a flexible (four) button, the organic material of which has been dispersed in the solvent. Semiconducting = 2? ==: a flexible printing plate organic semiconductor layer forming step of the ink holding portion of the pattern, which is formed by the above-mentioned transfer to cover the upper electrode and the organic electrode of the ruthenium electrode Engagement, transferring the organic semiconductor ink stick of the ink holding portion onto the source electrode and the non-electrode; the electrode opening electrode stacking step of stacking the gate 2, an organic thin film transistor at a predetermined position on the above-mentioned idle insulating layer The manufacturing method includes: '荔: the body ink on the surface of the dielectric substrate======= semi-conductive i ink material closes the solvent 2 of the ink holding portion; the leading edge; the organic semiconductor ink And a method for producing an organic semiconducting layer on the surface of the #明' color edge layer to form a source-organic thin film transistor on the organic casting layer, including the surface of the substrate Upper gate insulation The stack dance is formed with a flexible 16 201222910, the stack is composed of a dielectric layer _ insulating layer; and a 汲 electrode stack step is placed on the insulating layer on the stacked source electrode half-guide, so that the flexographic printing plate In combination with the above-mentioned New Zealand ^ = flexible printing plate ink transfer (four) job poles with the upper phase of the organic phase semi-conducting solvent evaporation (10) silk cover the upper semiconductor and the non-electrode between the channel portion of the organic semiconductor layer. a conductor layer-shaped step of using the lithium-conducting ink portion after the transfer and the organic-transistor of any one of the first to third aspects of the manufacturing process, using a lithography or a resolution of 400 to 1270 lines /2.54 cm of t as the above flexographic printing plate. J Qiao Fine Printing Plate 5 The organic, _ method of any one of claims 1 to 3, wherein the manufacturing of the electric Japanese body is set at 30 to 70. Within the scope of 17