201221305 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種晶圓研磨盤構造及其製造方法， 特別是關於一種利用活性銲料層來媒介連接轉盤及研 磨層之晶圓研磨盤構造及其製造方法。 【先前技術】 現今，晶片（chip)之製造需要使用矽或砷化鎵等基 材，及發光二極體(LED)之製造也需要使用藍寶石等基 材，其中這些矽、砷化鎵或藍寶石等基材的製造通常是 來自於晶圓。通常’晶圓之製造過程是先由拉晶法長晶 形成晶棒，再將晶棒切片，並經外周緣及雙面研磨後， 即可製得晶圓。 請參照第1圖所示，其揭示一種習用晶圓研磨盤構 造，其中一晶圓研磨盤10包含一轉盤11、一黏接層12 及一研磨層13，其中該轉盤11係由金屬或合金製成之 轉動基座，其中以鋁合金應用最廣泛；該黏接層12係 為兩劑型環氧樹脂（俗稱AB膠）；及該研磨層13係由鑄 鐵、軟性金屬合金或陶瓷類所製成，且該研磨層13之 一外表面131具有許多溝槽，如同心圓溝槽132。當該 晶圓研磨盤10用於研磨晶圓（未繪示）時，該轉盤11首 先受一轉動裝置(例如馬達）的帶動而轉動，並另將含有 鑽石粉、氧化鋁粉、氧化鈽粉或其他研磨粉等研磨顆粒 之研磨液滴入到該研磨層13之一外表面131上。接著， 201221305 以真空吸持裝置（未繪示）吸取一晶圓，並使該晶圓之一 表面接觸該研磨層13，如此即可進行研磨作業。 上述晶圓研磨盤1〇廣泛用於晶圓之研磨作業然 . 而，該晶圓研磨盤10在實際製造上仍具有下述問題， 例如.在製造時，首先提供該轉盤11，一般材質廣泛 地應用鋁合金，其鋁合金是屬於難潤濕金屬材質，是因 鋁合金表面會生成一層緻密氧化鋁層，導致難於潤濕接 • 口1、研磨層材質可分為錫基合金、鋅基合金、純銅或 陶瓷類。為了能有效地將轉盤11與研磨層接合，一般 抓用製造方式，是在該轉盤11上依序塗佈上A劑及B 劑，並在固化形成環氧樹脂之黏接層12前，將該研磨 層13貼在該黏接層12上。惟，當a劑混合於B劑時， 兩者將在極短時間（如3〇至6〇秒）内固化形成環氧樹脂 之黏接層12。因此，經常無法在該黏接層12固化之前 完成該研磨層13之水平校準作業，造成該研磨層13之 研磨表面未保持水平’因而產生不良品。此時，由於該 黏接層12之結合緊密，故也使得該研磨層13難以由該 黏接層12上取下，以進行重工(rew〇rk)。再者，若發現 A、B劑在混合後出現氣泡，通f也未能來得及在該黏 接層12固化之前將氣泡去除。若該黏接層12内存在氣 泡，則該晶圓研磨盤10可能在長期使用後由氣泡處產 生裂縫’因而影響轉可靠度或轉動時的作用力分佈， 進而影響使用壽命或晶圓研磨均勻度。另—方面，在研 磨過程，其此研磨液所含之鑽石粉等研磨顆粒在轉 201221305 磨晶圓期間也會同時造成該研磨層13的磨耗，並且必 須將晶圓研磨盤10拆除後，在大型切削機器進行平整 及研磨廣之許多溝槽的切削工作；在切削過程會因上述 問題，造成晶圓研磨盤1〇之轉盤11與研磨層分離；另 外，此切削加工降低該研磨層13的使用哥命。當研磨 層13耗盡時，則因晶圓研磨盤10之環氧樹脂黏接層 12去除，費時耗工；一般耗盡晶圓研磨盤10以廢棄物 處理，進而增加成本。 由於該晶圓研磨盤10具有上述缺點，導致該晶圓研 磨盤10之構造设s十最多僅適用於製造2〇对以下研磨盤 用，因受限於組裝精度與可靠度，而無法進一步應用於 製造下次代之40吋以上晶圓研磨用研磨盤。 故，有必要提供一種晶圓研磨盤構造及其製造方 法’以解決習用技術所存在的問題。 【發明内容】201221305 6. Technical Field of the Invention The present invention relates to a wafer grinding disc structure and a manufacturing method thereof, and more particularly to a wafer grinding disc structure in which an active solder layer is used to mediate a turntable and an abrasive layer. Its manufacturing method. [Prior Art] Today, the manufacture of chips requires the use of substrates such as germanium or gallium arsenide, and the fabrication of light-emitting diodes (LEDs) also requires the use of substrates such as sapphire, which are gallium, gallium arsenide or sapphire. The manufacture of substrates, etc., is usually from wafers. Usually, the manufacturing process of the wafer is to form an ingot by crystal pulling, and then the ingot is sliced and polished through the outer periphery and the double side to obtain a wafer. Referring to FIG. 1 , a conventional wafer grinding disc structure is disclosed. A wafer grinding disc 10 includes a turntable 11 , an adhesive layer 12 and an abrasive layer 13 , wherein the turntable 11 is made of metal or alloy. The rotating base is made, and the aluminum alloy is most widely used; the adhesive layer 12 is a two-component epoxy resin (commonly known as AB glue); and the polishing layer 13 is made of cast iron, soft metal alloy or ceramics. The outer surface 131 of the abrasive layer 13 has a plurality of grooves, like the circular groove 132. When the wafer grinding disc 10 is used for grinding a wafer (not shown), the turntable 11 is first rotated by a rotating device (for example, a motor), and further contains diamond powder, alumina powder, and cerium oxide powder. Or abrasive droplets of abrasive particles such as other abrasive powders are dropped onto the outer surface 131 of the abrasive layer 13. Next, in 201221305, a wafer is sucked by a vacuum holding device (not shown), and one surface of the wafer is brought into contact with the polishing layer 13, so that the polishing operation can be performed. The wafer grinding disc 1 is widely used for the grinding operation of the wafer. However, the wafer grinding disc 10 still has the following problems in actual manufacturing. For example, in manufacturing, the turntable 11 is first provided, and the general material is widely used. The application of aluminum alloy, the aluminum alloy is a hard-to-wet metal material, because a dense layer of aluminum oxide is formed on the surface of the aluminum alloy, which makes it difficult to wet the joint. 1. The material of the abrasive layer can be divided into tin-based alloy and zinc base. Alloy, pure copper or ceramic. In order to effectively join the turntable 11 and the polishing layer, generally, the manufacturing method is adopted, in which the agent A and the agent B are sequentially applied on the turntable 11, and before the adhesive layer 12 of the epoxy resin is cured, The polishing layer 13 is attached to the adhesive layer 12. However, when the agent a is mixed with the agent B, the two will be cured in a very short time (e.g., 3 to 6 seconds) to form the adhesive layer 12 of the epoxy resin. Therefore, it is often impossible to complete the horizontal alignment of the polishing layer 13 before the bonding layer 12 is cured, causing the polishing surface of the polishing layer 13 to be not maintained horizontally, thereby causing defective products. At this time, since the bonding of the adhesive layer 12 is tight, the polishing layer 13 is also difficult to be removed from the adhesive layer 12 for rework. Further, if it is found that the bubbles of the A and B agents appear after mixing, the pass f cannot be removed to remove the bubbles before the adhesive layer 12 is cured. If there is a bubble in the adhesive layer 12, the wafer grinding disc 10 may generate cracks from the bubble after long-term use, thereby affecting the reliability of the rotation or the distribution of the force during the rotation, thereby affecting the service life or uniform wafer polishing. degree. On the other hand, during the grinding process, the abrasive particles such as diamond powder contained in the polishing liquid may also cause abrasion of the polishing layer 13 during the polishing of the wafer in 201221305, and the wafer grinding disc 10 must be removed after The large-scale cutting machine performs the cutting work of flattening and grinding a wide variety of grooves; in the cutting process, the turntable 11 of the wafer grinding disc is separated from the polishing layer due to the above problems; in addition, the cutting processing reduces the polishing layer 13 Use your life. When the polishing layer 13 is exhausted, the epoxy resin bonding layer 12 of the wafer grinding disc 10 is removed, which is time consuming and labor-intensive; the wafer grinding disc 10 is generally depleted and disposed of with waste, thereby increasing the cost. Since the wafer grinding disc 10 has the above-mentioned disadvantages, the structure of the wafer grinding disc 10 is at most suitable for manufacturing a grinding disc of 2 〇 or less, which cannot be further applied due to assembly precision and reliability. For the next generation of 40-inch wafer grinding discs. Therefore, it is necessary to provide a wafer grinding disc construction and a manufacturing method thereof to solve the problems of the conventional technology. [Summary of the Invention]
及研 圓研磨盤構造及 磨層之組裝水平精準度、組裝良率、 ' 綠廢命拉And grinding round disc structure and assembly level accuracy of the grinding layer, assembly yield, 'green waste life pull
一步加工去除已 層之水平校準，並 進而有利於提升研 201221305 磨耗的研磨層，再利用新製 研磨層及原有的轉盤，進接合新製 用性。 利於“轉盤的可回收利 為達上述之目的，本發明提供一曰 、止甘4入.蚰I 杈供種日日圓研磨盤構 ^其包m —活性銲料層，接合於該轉盤上· 以及，-研磨層，接合於該活性銲料層上上， 層切削出數個溝槽。 、研磨The one-step process removes the horizontal alignment of the layer and further enhances the grinding layer of the 201221305 wear, and then uses the new abrasive layer and the original turntable to join the new process. For the purpose of the above-mentioned purpose, the present invention provides a 曰 曰 入 蚰 杈 杈 杈 杈 杈 杈 杈 杈 杈 杈 杈 杈 杈 杈 杈 杈 杈 杈 杈 杈 杈 杈 杈 杈 杈 杈 — — — — — — — — — — — — — — — , an abrasive layer bonded to the active solder layer, the layer cutting a plurality of trenches.
冉者，本發明提供一種晶圓研磨盤構造之製造方 法，其包含下列步驟··提供—轉盤，並將該轉盤置入^ 模具内；並預熱該轉盤後，將熔融活性銲 =;使轉盤表面上銲合-層活性鮮料;將炼融= 金屬基材組到賴具内之活性㈣上，因而在該 上依序鑄造㈣-活性銲騎及—㈣金屬研磨層The invention provides a method for manufacturing a wafer grinding disc structure, which comprises the following steps: providing a turntable, placing the turntable into a mold, and preheating the turntable to melt active welding = Soldering-layer active fresh material on the surface of the turntable; smelting = metal substrate group to the activity (4) in the sifter, thus sequentially casting (4)-active soldering and - (4) metal polishing layer
::成:晶圓研磨盤;以及，由該模具内取出該曰晶圓 研磨盤’並加工該軟性金屬研磨層之—外表面，該 研磨層之外表面具有數個溝槽。 八〇χ 另外，本發明提供另一種晶圓研磨盤構造之製造方 法，其包含下列步驟：提供一轉盤，在預熱該轉盤後， ^炼融活性銲㈣動塗佈以轉盤上；使轉盤表面上鲜合 層活性銲料：將該預熱研磨層置放於具有活性銲料之 轉盤上進行活性軟銲接合’因而在該轉盤上依序形成一 活性銲料層及—軟性金屬研磨層，以共同構成__晶圓研 磨盤；以及，該晶圓研隸進行加卫該軟性金屬研磨層 之一外表©，其中該研磨層之外表面具有數個溝槽。^ 201221305 研磨層以可預先完成接合層之一層活性銲料處理，以及 另側之外表面的溝槽加工處理。 此外，本發明提供另一種晶圓研磨盤構造之製造方 法，其包含下列步驟：回收一晶圓研磨盤，其具有一轉 盤 /舌性銲料層及一已磨耗之研磨層；加工去除該已 磨耗之研磨層，以裸露出一接合表面；以及，在該接合 表面上塗佈一層熔融活性銲料，以藉由該活性銲料形成 一新製活性銲料層來媒介接合一新製研磨層，而共同構 成一重製晶圓研磨盤。或是；將一回收—晶圓研磨盤進 仃加熱至活性銲料的熔點以上，直接地將一轉盤與一已 磨耗之研磨層分離；該—轉盤裸露出—層活性鲜料以 及’在該接合活性㈣層之表面上_塗佈—層新的 融活性銲料，關由該活性銲料形成— 來媒介連接合一新製研磨層，而共同構 磨盤。 里泉日日圓研:: into: a wafer grinding disc; and the inner surface of the soft metal polishing layer is taken out from the mold and the outer surface of the polishing layer has a plurality of grooves. In addition, the present invention provides another method for manufacturing a wafer grinding disc structure, comprising the steps of: providing a turntable, after preheating the turntable, smelting active welding (four) moving coating on the turntable; Fresh-on-layer active solder on the surface: the pre-heated abrasive layer is placed on a turntable having active solder for active soft soldering. Thus, an active solder layer and a soft metal abrasive layer are sequentially formed on the turntable to collectively Forming a wafer grinding disc; and, the wafer is researched to enhance the appearance of the soft metal polishing layer, wherein the outer surface of the polishing layer has a plurality of grooves. ^ 201221305 The abrasive layer is treated with a layer of reactive solder that can be pre-finished, and a grooved finish on the other side. In addition, the present invention provides another method of fabricating a wafer grinding disc construction comprising the steps of: recycling a wafer grinding disc having a turntable/tongue solder layer and an abraded abrasive layer; processing to remove the worn An abrasive layer to expose a bonding surface; and a layer of molten active solder coated on the bonding surface to form a new active solder layer by the active solder to mediate a new abrasive layer to form a joint A heavy wafer grinding disc. Or; a recycling-wafer grinding disc is heated to above the melting point of the active solder to directly separate a turntable from an abraded abrasive layer; the turntable is exposed to a layer of active fresh material and 'in the joint On the surface of the active (four) layer, a new layer of molten active solder is formed by the active solder to form a new abrasive layer and a common grinding disc. Riquan Day Riken Research
在本發日仏―實施财，該轉狀㈣心或紹合 金。 D 在本發明之一實施例中，該活性銲料選自錫夹人 金、銦基合金或其他銲錫合金，並加人㈣丨〜2重·^ 之稀土族元素（Re)’其稀土族元素係泛指：銃元素。 (Sc)、纪元素⑺及「綱系元素」，其+「綱系元素」、 包括：鑭（La)、錦(Ce)、镨（Pr)、敛（Nd)、♦巨（μ)、 釤（Sm)、銪（Eu)釓（Gd)軾（Td)、_ Dy、鈥 斜(Er)、链(Tm)、镱(Yb)或轉(Lu) ’但在產業的利用^ 201221305 稀土族元素通常係以混合物的形態存在，常見之稀土族 元素混合物通常係由：鑭（La)、鈽（Ce)、镨（Pr)、鈥 (Nd)、釤（Sm)以及極少量的鐵、磷、硫或矽所組成。 在本發明之一實施例中，該錫基合金或銦基合金混 摻有6重量％以下之至少一種活性成分，其選自包含4 重量％以下之鈦(Ti)、釩(V)、鎂（Mg)、鋰（Li)、锆(Zr)、 給(Hi)或其組合；以及其餘重量為稀土族元素，該稀土 族元件選自其稀土族元素係泛指：銳元素（Sc)、纪元素 (Y)及「鑭系元素」或其組合。 在本發明之一實施例中，該研磨層之金屬基材為純 錫、鍚合金、錫録合金、純鋅、鋅合金、純銅或樹脂銅 盤。 在本發明之一實施例中，該研磨層之外表面具有數 個溝槽，其排列方式可為同心圓、放射形或其他曲線形 式0 【實施方式】 為了讓本發明之上述及其他目的、特徵、優點能更 明顯易懂，下文將特舉本發明較佳實施例，並配合所附 圖式，作詳細說明如下。 請參照第2圖所示，其揭示本發明較佳實施例之晶 圓研磨盤構造之示意圖，其中一晶圓研磨盤20包含： 一轉盤21 ; —活性銲料層22，接合於該轉盤21上；以 及，一研磨層23，接合於該活性銲料層22上，其中該 201221305 研磨層23之一外表面231，該外表面231則具有數個 溝槽232。本發明之晶圓研磨盤20係可選擇依下述第 一或第二實施例揭露之晶圓研磨盤構造之製造方法來 進行製造，或依下述第三實施例揭露之晶圓研磨盤構造 之製造方法來進行回收重製，各實施例係分別詳細說明 如下： 請參照第3A、3B及3C圖所示’本發明第一實施例 之晶圓研磨盤構造之製造方法包含下列步驟：提供一轉 盤21，並將該轉盤21置入一模具3〇内，並加熱至活 性銲料熔點以上；在該模具30内之轉盤21上擾動塗佈 一熔融活性銲料220 ;使轉盤21表面與溶融活性銲料 接合反應，使轉盤21上形成一層活性銲料層；將熔融 金屬基材230澆注到該模具30内之熔融活性銲料22〇 上’因而在該轉盤21上依序形成一活性鲜料層22及一 研磨層23 ’以共同構成一晶圓研磨盤2〇;以及，由該 模具30内取出該晶圓研磨盤20，並加工該研磨層23 之一外表面231，其中該研磨層之外表面231具有數個 溝槽232。 晴參照第3A圖所示，本發明第一實施例之晶圓研 磨盤構造之製造方法首先係：提供一轉盤21，並將該 轉盤21置入一模具30内。在本步驟中，該轉盤21之 材質較佳為鋁或鋁合金。該模具30較佳為金屬、合金、 陶瓷或石膏等耐熱材料製成，其耐熱溫度需高於後續熔 融金屬基材230及活性銲料220之熔點溫度。該模具 201221305 3〇具有一内部空間，該内部空間之形狀大致對應於該 晶圓研磨盤20之預定外形。 請再參照第3A圖所示，本發明第一實施例之晶圓 研磨盤構造之製造方法接著係：在該模具3〇内之預熱 轉盤21達到活性銲料合金的溶點以上，再將一熔融活 性鲜料220攪動塗佈於轉盤21上，使轉盤21與熔融活 性鮮料220進行活性軟銲接合反應，因此使轉盤21的 鲁 表面具有一層活性銲料。在本步驟中，該活性銲料選自 锡基合金、銦基合金或其他銲錫合金，並加入〇 〇1〜2 重量％之稀土族元素（Re)，其稀土族元素係泛指：銳 元素(Sc)、釔元素（γ)及「鑭系元素」，其中「鑭系元 素」包括：鑭（La)、鈽(Ce)、镨（Pr)、鈥（Nd)、钜 (p«0、釤（Sm)、銪（Eu)釓（Gd)铽（Td)、鏑 Dy、 欽（Ho)、铒(Er)、铥(Tm)、镱(Yb)或镥(Lu)，但在產業 的利用上’稀土族元素通常係以混合物的形態存在，常 • 見之稀土族元素混合物通常係由：鑭（La)、鈽（Ce)、 譜（Pr)、斂（Nd)、釤（Sm)以及極少量的鐵、磷、 硫或矽所組成。 在本發明之一實施例中，該錫基合金或銦基合金混 捧有6重量％以下之至少一種活性成分，其選自包含4 重量％以下之鈦(Ti)、釩(V)、鎂（Mg)、鋰（Li)、鍅(zr)、 給(Hf)或其組合；以及其餘重量為稀土族元素，該稀土 族元件選自其稀土族元素係泛指：銃元素(Sc)、釔元素 (Y)及「鑭系元素」或其組合。該活性銲料220之預 11 201221305 設熔點係依實際產品需求來經由調整銲料組成比例而 進行叹疋，其熔點溫度範圍可能在1至3〇〇之 間，但並不限於此。再者，該活性銲料22〇之塗佈厚度 係依銲料組成比例造成之結合性質以及與該轉盤21及 研磨層23之銲接性質來進行調整，並不加以限制。 請參照第3B圖所示’本發明第一實施例之晶圓研磨 盤構造之製造方法接著係：將熔融金屬基材澆注到 該模具30内之活性銲料22〇上，因而在該轉盤21上依 序形成一活性銲料層22及一研磨層23,以共同構成一 φ 晶圓研純20。在本步.驟中，該研磨層23之洗注金屬 基材230較佳選自為純豸、錫合金、錫銻合金、純辞、 鋅合金、純銅或樹脂銅盤，其中合金種類係依最終研磨 盤欲研磨之對象或用途而進行轉。接著，在洗注該炼 融金屬基材230時，由於該金屬基材謂之炫點通常高 於該活性録料22G之溶點，因而會同時造成該活性錦料 22〇熔融，故該金屬基材no與活性銲料—將能順利 緊密相互接合。 · 在活性軟銲接合期間，該活性鮮料220中之活性成 分有.增加_接合性f。更詳言之，該活性成分對 氧、碳或氮7L素的親和性(如氧化銘、碳化物或氮化物 等各種陶竞薄膜的氧基、碳基或氮基），其可經由化學 反應使該轉盤21之紹或銘合金表面的氧化㈣產生表 面刀解而形成-反應層，該反應層所含的反應生成物主 要是由活性成分之金屬與氧化鋁的複合物，其具有與金 12 201221305 屬近似之微結構，故能有效促進熔融金屬潤濕該反應層 處之表面並填入該氧化鋁表面之微細孔洞等死角内如 此可使液態熔融之活性銲料220直接潤濕銲接於清潔 後的氧化鋁表面。藉此，本發明即可達到簡單快速的將 該活性銲料220銲接結合於該轉盤21之目的，且其製 程容易控制及銲接結合性質良好。在鑄造後，該活性銲 料220與金屬基材230分別冷卻固化成為該活性銲料層 22及研磨層23,其中該活性銲料層22媒介結合在該轉 盤21及研磨層23之間，因而共同構成該晶圓研磨盤 20。 請參照第3C圖所示，本發明第一實施例之晶圓研磨 盤構造之製造方法接著係：由該模具3〇内取出該晶圓 研磨盤20，並加工該研磨層23之一外表面231。在本 步驟中，在移去該模具3〇後，利用切削工具對該研磨 層23之外表面231進行加工，使該研磨層23之外表面 231形成數個溝槽232，其溝槽排列為同心圓、放射狀 或其他形式。另外，亦可利用多晶鑽石刨平工具對該晶 圓研磨盤20之外周面進行刨平加工。在本發明中，該 溝槽232可在研磨晶圓期間用以含蓄研磨液及避免晶 圓過度吸附在該外表面231上。 再者’請參照第4A、4B及4C圖所示，本發明第二 實施例之晶圓研磨盤構造及其製造方法係相似於本發 明第一實施例’但該第二實施例之晶圓研磨盤構造及其 製造方法係包含下列步驟：利用一新製研磨層23’並 13 201221305 對該研磨層23之-外表面231進行加工後，預熱該研 磨層23達到預活性軟銲之活性銲料熔點以上另將一 熔融活性銲料攪動塗佈於研磨層23之另一侧上（未繪 示）；提供一轉盤21，並在該預熱轉盤21上達到活性銲 料合金的熔點以上，再將一熔融活性銲料攪動塗佈於轉 盤21上；將該具有活性銲料層22之研磨層23放置在 具有熔融活性銲料層22之轉盤21上；再藉由加熱、加 壓及轉動來去除轉盤21與研磨層23之熔化活性銲料層 22的間隙’以便在該研磨層23及轉盤21之間以摩擦 銲接方式接合形成一活性銲料層22，其中該研磨層 23、活性銲料層22及轉盤21共同構成一晶圓研磨盤 20 ° 相較於該第一實施例，該第二實施例係進一步預先 完成該研磨層23,接著再藉由加熱熔融該活性銲料 220 ’來形成該活性銲料層22，以媒介結合在該轉盤21 及研磨層23之間，因而共同構成該晶圓研磨盤20。在 活性軟銲期間，該活性銲料220中之活性成分有利於增 加接合性質。更詳言之，該活性成分對氧、碳或氮元素 的親和性（如氧化鋁、碳化物或氮化物等各種陶瓷薄膜 的氧基、碳基或氮基），其可經由化學反應使該轉盤21 之紹或IS合金表面的氧化鋁層以及該研磨層23之錫或 錫合金、鋅和鋅合金、銅或陶瓷之表面的氧化層產生表 面分解而形成一反應層，該反應層對活性銲料具有良好 /閏濕性’故能有效促進熔融活性銲料與金屬或陶瓷的活 201221305 性軟銲接合反應。藉此，本發明即可達到簡單快速的將 該活性銲料220銲接結合於該轉盤2丨及研磨層23之目 的，且其製程容易控制及接合性質良好。在接合後，該 活性銲料220冷卻固化成為該活性銲料層22，其中該 活性銲料層22媒介結合在該轉盤21及研磨層23之 間，因而共同構成該晶圓研磨盤20。 另一方面，請參照第5A、、5C、5D及5E圖所 示，本發明第三實施例之晶圓研磨盤構造及其製造方法 係相似於本發明第一及第'一實施例，但該第三實施例之 晶圓研磨盤構造之製造方法係屬於一種回收重製方 法，其包含下列少驟：回收一晶圓研磨盤20，其具有 一轉盤21、一活性銲料層22及一已磨耗之研磨層23 ; 加工去除該已磨耗之研磨層23，以裸露出一接合表面 24 ;以及，在該接合表面24上攪動塗佈一熔融活性銲 料250，以藉由該活性銲料250形成一新製活性銲料層 25來媒介接合一新製研磨層26，而共同構成一重製晶 圓研磨盤20’ ；另其二方式：回收一晶圓研磨盤2〇，其 具有一轉盤21、一活性銲料層22及一已磨耗之研磨層 23，直接加熱升溫到活性銲料熔點以上，直接地將/轉 盤21與-已磨耗之研磨層23分離及移除；該〆轉盤 21裸露出-活性銲料層22之接合表面％;以及，在該 接合活性鮮料層22之表面上__-層新麟融活 性銲料25 ’以藉由該活性銲料，形成—新製活性錄 料層25來媒介連接—新製研磨層26，而共同構成〆重 15 201221305 製晶圓研磨盤20, ’其中該重製步驟可選擇使用相似於 本發明第一及第二實施例之製造方法。 “ϋ於該第及第—實施例’該第三實施例係屬於 回收重製該晶圓研磨盤2〇之製造方法，其特徵在於先 回收-已使料之晶圓研磨盤2G，相車肖彳加工或其 他研磨工具或加熱熔化活性銲料層方式進行加工去除 該=磨耗之研磨層23，其中本發明可選擇移除整個二 == 是移除一部分之研磨層23。接著，裸露出 接。表面24，可以是該活性銲料層22、 或該轉盤21之—裸露表面。例如，在第5B圖中，树 裸露出該活性銲料層22之接合表面Μ為例， =限於此。隨後’該新製活性銲料層Μ 磨層26之製作方式係可實質相同於第-實施例，或可 能採用第二實施例之方法先預製該新製研磨層26，再 透過該新製活性銲料層25之媒介來接合於該轉盤2卜 如第5C、5D及5E圖所示，當第三實施例之重製步 驟選用第-實施例之製造方法時，本㈣係將熔融 基材260 &注到該㈣30内之活性鮮料25〇上， 該接合表面24上依賴造形成活性銲料層”及 -新製研磨層26’以共同構成—重製晶圓研磨盤2〇，； 以及，由該模具3G内取出該重製日日日圓研純20，’並加 工該新製研磨層26之一外表面261。 或者’當第三實施例之重製步驟選用第二實施例之 製造方法時(未繪示’但可參照第4A至4C圖），本發明 201221305 係將熔融金屬基材26〇澆注到一模具3〇内，以鑄造形 成一新製研磨層26;加工該新製研磨層26之一外表面 261 ’預熱新製研磨層26至預銲接之活性銲料的熔點以 上，並在預熱完成之新製研磨層26的另一側上塗佈一 熔融活性銲料25〇 ;在該回收之晶圓研磨盤預熱至 /舌! 生鲜料的溶點以上，並在預熱完成之晶圓研磨盤 的接。表面24上塗佈一熔融活性銲料25〇 ;將該新製 • 研f層26放置在該熔融活性銲料250上；以及，加熱 熔融忒活性銲料250，以便在該新製研磨層26及轉盤 1之間形成一新製活性銲料層25，其中該新製研磨層 26新製活性銲料層25及轉盤21共同構成一重製晶圓 研磨盤30。 =如此，本發明第三實施例即可由該回收之轉盤21、 該1製活性銲料層25及該新製研磨層26來共同構成- 重製B曰圓研磨盤20’，其中亦可能包含一部分原有的活 鲁 辑料層22(及研磨層23)。該重,製晶圓研磨盤2〇,能提 供與原有的研磨層23具相同研磨性質之新製研磨層 26其中該新製研磨層26之外表面261同樣具有數個 溝槽262。 如上所述’相較於習用晶圓研磨盤10使用兩劑型環 氧樹爿曰做為該黏接層12來媒介結合該轉盤U及研磨層 13而產生組裝水平精準度、黏接品質與容易磨耗等缺 =導致無法進-步應用於製造大尺寸晶圓研磨用研磨 盤，笛 ^ 至5E圖之本發明藉由係利用該活性銲料層22 17 201221305 來媒介接合該轉盤21及研磨層23，以便在組裝期間方 便進行該研磨層23之水平校準，並有效避免在該活性 銲料層22内產生氣泡，進而有利於提升該研磨層23之 組裝水平精準度、組裝良率、接合強度與接合可靠度， 並能應用於製造大尺寸晶圓研磨用研磨盤。再者，在該 研磨層23磨耗後，可進一步加工去除已磨耗的研磨層 23，再利用新製活性銲料層25來媒介接合新製研磨層 26及原有的轉盤21，進而有利於提高該轉盤21的可回 收利用性。 雖然本發明已以較佳實施例揭露，然其並非用以限 制本發明，任何熟習此項技藝之人士，在不脫離本發明 之精神和範圍内，當可作各種更動與修飾，因此本發明 之保護範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 第1圖：習用晶圓研磨盤構造之示意圖。 第2圖：本發明較佳實施例之晶圓研磨盤構造之示 意圖。 第3A至3C圖：本發明第一實施例之晶圓研磨盤構 造之製造方法之流程示意圖。 第4A至4C圖：本發明第二實施例之晶圓研磨盤構 造之製造方法之流程示意圖。 第5A至5E圖：本發明第三實施例之晶圓研磨盤構 造之製造方法之流程示意圖。 18 201221305 【主要元件符號說明】 10 晶圓研磨盤 12 黏接層 131 外表面 20 晶圓研磨盤 22 活性銲料層 23 研磨層 231 外表面 24 接合表面 250 活性銲料 260 金屬基材 262 溝槽 30 模具 11 轉盤 13 研磨層 132同心圓溝槽 21 轉盤 220活性銲料 230金屬基材 232溝槽 25 新製活性銲料層 26 新製研磨層 261外表面 20’晶圓研磨盤 19In the day of this issue, the implementation of the fiscal, the transformation of (four) heart or Shaojin. D In one embodiment of the present invention, the active solder is selected from the group consisting of tin-plated human gold, indium-based alloys or other solder alloys, and is added with a rare earth element (Re) of the (four) 丨~2 weight·^ Department refers to: 铳 element. (Sc), Ji element (7), and "class element", including + "class elements", including: ) (La), 锦 (Ce), 镨 (Pr), convergence (Nd), ♦ giant (μ),钐 (Sm), 铕 (Eu) 釓 (Gd) 轼 (Td), _ Dy, skew (Er), chain (Tm), 镱 (Yb) or turn (Lu) 'but in the industry's use ^ 201221305 rare earth Group elements are usually present in the form of a mixture. Common rare earth element mixtures are usually composed of: lanthanum (La), cerium (Ce), praseodymium (Pr), cerium (Nd), cerium (Sm), and very small amounts of iron. Made up of phosphorus, sulfur or antimony. In an embodiment of the present invention, the tin-based alloy or the indium-based alloy is blended with at least one active ingredient of 6% by weight or less selected from titanium (Ti), vanadium (V), and magnesium containing 4% by weight or less. (Mg), lithium (Li), zirconium (Zr), (Hi) or a combination thereof; and the remaining weight is a rare earth element selected from the group consisting of rare earth elements: sharp element (Sc), Element (Y) and "lanthanide" or a combination thereof. In one embodiment of the invention, the metal substrate of the abrasive layer is a pure tin, a bismuth alloy, a tin alloy, a pure zinc, a zinc alloy, a pure copper or a resin copper disk. In an embodiment of the present invention, the outer surface of the polishing layer has a plurality of grooves, which may be arranged in a concentric circle, a radial shape or other curved form. [Embodiment] For the above and other purposes of the present invention, The features and advantages will be more apparent and understood. The preferred embodiments of the present invention will be described in detail herein below. Referring to FIG. 2, a schematic diagram of a wafer grinding disc structure according to a preferred embodiment of the present invention is disclosed. A wafer grinding disc 20 includes: a turntable 21; an active solder layer 22 bonded to the turntable 21 And an abrasive layer 23 bonded to the active solder layer 22, wherein the 201221305 has an outer surface 231 of the abrasive layer 23, the outer surface 231 having a plurality of trenches 232. The wafer grinding disc 20 of the present invention can be manufactured by the manufacturing method of the wafer grinding disc structure disclosed in the first or second embodiment, or the wafer grinding disc structure disclosed in the following third embodiment. Each of the embodiments is described in detail as follows: Please refer to FIGS. 3A, 3B, and 3C for the manufacturing method of the wafer grinding disc structure according to the first embodiment of the present invention including the following steps: a turntable 21, and the turntable 21 is placed in a mold 3〇 and heated to above the melting point of the active solder; a molten active solder 220 is applied to the turntable 21 in the mold 30; the surface of the turntable 21 is melted and activated. The solder bonding reaction forms an active solder layer on the turntable 21; the molten metal substrate 230 is poured onto the molten active solder 22 in the mold 30. Thus, an active fresh layer 22 is sequentially formed on the turntable 21 and An abrasive layer 23' to collectively form a wafer grinding disc 2; and, the wafer grinding disc 20 is taken out from the mold 30, and an outer surface 231 of the polishing layer 23 is processed, wherein the outer surface of the polishing layer 2 31 has a plurality of grooves 232. Referring to Fig. 3A, the manufacturing method of the wafer grinding disc structure of the first embodiment of the present invention is first provided by providing a turntable 21 and placing the turntable 21 into a mold 30. In this step, the material of the turntable 21 is preferably aluminum or aluminum alloy. The mold 30 is preferably made of a heat resistant material such as metal, alloy, ceramic or gypsum, and its heat resistance temperature is higher than the melting temperature of the subsequent molten metal substrate 230 and the active solder 220. The mold 201221305 3 has an internal space that substantially corresponds to the predetermined shape of the wafer grinding disc 20. Referring to FIG. 3A again, the manufacturing method of the wafer grinding disc structure according to the first embodiment of the present invention is as follows: the preheating turntable 21 in the mold 3〇 reaches the melting point of the active solder alloy, and then one The molten active fresh material 220 is agitated and applied on the turntable 21 to cause the active turn-bonding reaction of the turntable 21 and the molten active fresh material 220, thereby providing a layer of active solder on the surface of the turntable 21. In this step, the active solder is selected from a tin-based alloy, an indium-based alloy or other solder alloy, and is added with 1 to 2% by weight of a rare earth element (Re), and the rare earth element is generally referred to as a sharp element ( Sc), elemental (γ) and "lanthanide", of which "lanthanum" includes: 镧 (La), 钸 (Ce), 镨 (Pr), 鈥 (Nd), 钜 (p « 0, 钐(Sm), 铕 (Eu) 釓 (Gd) 铽 (Td), 镝 Dy, 钦 (Ho), 铒 (Er), 铥 (Tm), 镱 (Yb) or 镥 (Lu), but in the use of industry The 'rare earth elements' usually exist in the form of a mixture. Often, the rare earth element mixture is usually composed of: lanthanum (La), cerium (Ce), spectrum (Pr), condensed (Nd), strontium (Sm), and In an embodiment of the present invention, the tin-based alloy or the indium-based alloy is mixed with at least one active ingredient of 6% by weight or less, which is selected from the group consisting of 4% by weight. The following titanium (Ti), vanadium (V), magnesium (Mg), lithium (Li), lanthanum (zr), (Hf) or a combination thereof; and the remaining weight is a rare earth element selected from the group consisting of Rare earth element铳 element (Sc), yttrium element (Y) and "lanthanide element" or a combination thereof. The active solder 220 pre-11 201221305 set the melting point according to the actual product demand to adjust the solder composition ratio to sigh, its melting point temperature The range may be between 1 and 3 Torr, but is not limited thereto. Further, the coating thickness of the active solder 22 is a bonding property depending on the composition ratio of the solder and the soldering property with the turntable 21 and the polishing layer 23. The adjustment method is not limited. Referring to FIG. 3B, the manufacturing method of the wafer grinding disc structure according to the first embodiment of the present invention is followed by: casting the molten metal substrate into the active solder 22 in the mold 30. Then, an active solder layer 22 and an abrasive layer 23 are sequentially formed on the turntable 21 to jointly form a φ wafer polishing 20. In this step, the polishing layer 23 is washed with a metal base. The material 230 is preferably selected from the group consisting of pure tantalum, tin alloy, tin-bismuth alloy, pure-word, zinc alloy, pure copper or resin copper disk, wherein the alloy type is rotated according to the object or use of the final grinding disc to be ground. Note the smelting metal When the material 230 is used, since the metal substrate is usually higher than the melting point of the active recording material 22G, the active material 22 〇 is melted at the same time, so the metal substrate no and the active solder will be smooth. Tightly inter-engaged. · During the active soft soldering, the active ingredient in the active fresh material 220 has an increase_joinability f. More specifically, the affinity of the active ingredient to oxygen, carbon or nitrogen 7L (eg Oxygen, carbon or nitrogen based on various ceramics, such as oxides, carbides or nitrides, which can be chemically reacted to cause surface oxidation of the surface of the turntable 21 or the surface of the alloy (4) to form a reaction The reaction product contained in the reaction layer is mainly composed of a composite of a metal of an active component and alumina, which has a microstructure similar to that of the gold 12 201221305, so that the molten metal can be effectively promoted to wet the reaction layer. The surface is filled into the dead holes of the micropores such as the surface of the alumina so that the liquid molten active solder 220 can be directly wet-welded to the surface of the cleaned alumina. Thereby, the present invention can achieve the purpose of welding and bonding the active solder 220 to the turntable 21 simply and quickly, and the process is easy to control and the welding bonding property is good. After casting, the active solder 220 and the metal substrate 230 are respectively cooled and solidified into the active solder layer 22 and the polishing layer 23, wherein the active solder layer 22 is mediumly bonded between the turntable 21 and the polishing layer 23, thereby collectively Wafer grinding disc 20. Referring to FIG. 3C, the manufacturing method of the wafer grinding disc structure according to the first embodiment of the present invention is followed by: taking out the wafer grinding disc 20 from the mold 3 and processing the outer surface of the polishing layer 23. 231. In this step, after the mold 3 is removed, the outer surface 231 of the polishing layer 23 is processed by a cutting tool, so that the outer surface 231 of the polishing layer 23 is formed into a plurality of grooves 232, and the grooves are arranged as Concentric, radial or other form. Alternatively, the outer peripheral surface of the crystal grinding disc 20 may be planed by a polycrystalline diamond planing tool. In the present invention, the trench 232 can be used to deposit the slurry during polishing of the wafer and to avoid excessive adsorption of the crystal on the outer surface 231. Furthermore, please refer to FIGS. 4A, 4B and 4C, the wafer grinding disc structure and the manufacturing method thereof according to the second embodiment of the present invention are similar to the first embodiment of the present invention, but the wafer of the second embodiment The grinding disc structure and the manufacturing method thereof comprise the steps of: pre-heating the polishing layer 23 to pre-active soldering activity after processing the outer surface 231 of the polishing layer 23 by using a new abrasive layer 23' and 13 201221305 Above the melting point of the solder, a molten active solder is agitated and coated on the other side of the polishing layer 23 (not shown); a turntable 21 is provided, and the melting point of the active solder alloy is reached on the preheating turntable 21, and then A molten active solder is agitated and coated on the turntable 21; the abrasive layer 23 having the active solder layer 22 is placed on the turntable 21 having the molten active solder layer 22; and the turntable 21 is removed by heating, pressurizing and rotating The gap of the abrasive layer 23 is melted by the active solder layer 22 to form an active solder layer 22 by friction welding between the polishing layer 23 and the turntable 21, wherein the abrasive layer 23, the active solder layer 22 and the turntable 21 are common Forming a Wafer Disc 20 ° Compared to the first embodiment, the second embodiment further completes the polishing layer 23 in advance, and then melts the active solder 220' by heating to form the active solder layer 22, The medium is bonded between the turntable 21 and the polishing layer 23, thereby collectively constituting the wafer grinding disc 20. The active ingredient in the active solder 220 facilitates the bonding properties during active soldering. More specifically, the affinity of the active ingredient for oxygen, carbon or nitrogen elements (such as oxy, carbon or nitrogen groups of various ceramic films such as alumina, carbide or nitride), which can be chemically reacted The aluminum oxide layer on the surface of the turntable 21 or the surface of the IS alloy and the oxide layer on the surface of the tin or tin alloy, zinc and zinc alloy, copper or ceramic of the polishing layer 23 are surface-decomposed to form a reaction layer, and the reaction layer is active. The solder has good/wetness, so it can effectively promote the soft soldering reaction of the molten active solder with the metal or ceramic 201221305. Thereby, the present invention can achieve the purpose of welding and bonding the active solder 220 to the turntable 2 and the polishing layer 23 simply and quickly, and the process is easy to control and the bonding property is good. After bonding, the active solder 220 is cooled and solidified into the active solder layer 22, wherein the active solder layer 22 is interposed between the turntable 21 and the polishing layer 23, thereby collectively constituting the wafer grinding disc 20. On the other hand, referring to FIGS. 5A, 5C, 5D, and 5E, the wafer grinding disc structure and the manufacturing method thereof according to the third embodiment of the present invention are similar to the first and the first embodiments of the present invention, but The manufacturing method of the wafer grinding disc structure of the third embodiment belongs to a recycling re-making method, which comprises the following steps: recovering a wafer grinding disc 20 having a turntable 21, an active solder layer 22 and a An abrasive layer 23 is worn away; the abrasive layer 23 is removed to expose a bonding surface 24; and a molten active solder 250 is agitated on the bonding surface 24 to form a molten solder 250. The new active solder layer 25 is used to mediate a new abrasive layer 26 to form a reconstituted wafer grinding disc 20'; the other is to recover a wafer grinding disc 2, which has a turntable 21, an active The solder layer 22 and an abraded abrasive layer 23 are directly heated and heated above the melting point of the active solder to directly separate and remove the / turntable 21 from the worn abrasive layer 23; the turntable 21 is exposed - the active solder layer 22% of the joint surface; And, on the surface of the bonding active fresh material layer 22, the __-layer Xinlin melt active solder 25' is medium-connected by the active solder to form a new active recording layer 25, the new abrasive layer 26, Together, it constitutes a weight 15 201221305 wafer grinding disc 20, 'where the remanufacturing step can select a manufacturing method similar to the first and second embodiments of the present invention. The third embodiment belongs to a manufacturing method for recycling and remanufacturing the wafer grinding disc 2, which is characterized in that the wafer grinding disc 2G of the material is first recovered, and the vehicle is phased. The razor processing or other abrasive tool or heat-melting active solder layer is processed to remove the abrasive layer 23, wherein the invention can optionally remove the entire two == is to remove a portion of the abrasive layer 23. Then, barely exposed The surface 24 may be the exposed surface of the active solder layer 22, or the turntable 21. For example, in Fig. 5B, the bare exposed surface of the active solder layer 22 is taken as an example, and is limited to this. The new active solder layer honing layer 26 can be fabricated in substantially the same manner as the first embodiment, or the new polishing layer 26 can be pre-prepared by the method of the second embodiment, and the new active solder layer 25 can be passed through. The medium is bonded to the turntable 2 as shown in Figures 5C, 5D and 5E. When the reworking step of the third embodiment is selected from the manufacturing method of the first embodiment, the present (4) is to melt the substrate 260 & To the active fresh material 25 该 in the (4) 30, The bonding surface 24 is formed by forming an active solder layer and a new polishing layer 26' to form a re-grinding wafer polishing disc 2; and removing the re-made Japanese yen pure pure 20 from the mold 3G. , and processing an outer surface 261 of the new abrasive layer 26. Or when the remanufacturing step of the third embodiment selects the manufacturing method of the second embodiment (not shown 'but can refer to FIGS. 4A to 4C), the present invention 201221305 casts the molten metal substrate 26〇 into a mold. 3, a new abrasive layer 26 is formed by casting; the outer surface 261 of the new abrasive layer 26 is processed to preheat the new abrasive layer 26 to above the melting point of the pre-welded active solder, and is completed in the preheating process. A molten active solder 25 is coated on the other side of the new abrasive layer 26; the recovered wafer abrasive disk is preheated to / above the melting point of the fresh material, and is polished in the preheated wafer. The connection of the disk. A molten active solder 25 is coated on the surface 24; the new f-layer 26 is placed on the molten active solder 250; and the molten active copper 250 is heated to be melted in the new abrasive layer 26 and the turntable 1 A new active solder layer 25 is formed between the new active solder layer 26 and the active solder layer 25 and the turntable 21 to form a reconstituted wafer grinding disc 30. Thus, the third embodiment of the present invention can be formed by the recycled turntable 21, the active active solder layer 25 and the new abrasive layer 26 - a re-made B-round grinding disc 20', which may also contain a part The original living layer 22 (and the polishing layer 23). The heavy, wafer-grinding disc 2 can provide a new abrasive layer 26 having the same abrasive properties as the original abrasive layer 23, wherein the outer surface 261 of the new abrasive layer 26 also has a plurality of grooves 262. As described above, the two-component epoxy tree raft is used as the adhesive layer 12 to mediate the turntable U and the polishing layer 13 to produce assembly level accuracy, bonding quality and ease. Absence of abrasion, etc., causes inability to be further applied to the manufacture of a large-sized wafer polishing disk, and the present invention utilizes the active solder layer 22 17 201221305 to mediate the disk 21 and the polishing layer 23 by the use of the active solder layer 22 17 201221305. In order to facilitate the horizontal alignment of the polishing layer 23 during assembly, and effectively avoiding the generation of bubbles in the active solder layer 22, thereby facilitating the assembly level accuracy, assembly yield, joint strength and bonding of the polishing layer 23. Reliability, and can be applied to the manufacture of grinding discs for large-size wafer grinding. Furthermore, after the polishing layer 23 is worn away, the worn polishing layer 23 can be further processed and removed, and the new active solder layer 25 is used to media bond the new polishing layer 26 with the original turntable 21, thereby facilitating the improvement. The recyclability of the turntable 21. The present invention has been disclosed in its preferred embodiments, and is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application. [Simple description of the drawing] Fig. 1: Schematic diagram of the structure of a conventional wafer grinding disc. Figure 2 is a schematic illustration of the construction of a wafer abrasive disk in accordance with a preferred embodiment of the present invention. 3A to 3C are views showing the flow of a manufacturing method of a wafer grinding disc structure according to a first embodiment of the present invention. 4A to 4C are views showing the flow of a manufacturing method of a wafer grinding disc structure according to a second embodiment of the present invention. 5A to 5E are views showing the flow of a manufacturing method of a wafer grinding disc structure according to a third embodiment of the present invention. 18 201221305 [Major component symbol description] 10 Wafer grinding disc 12 Bonding layer 131 External surface 20 Wafer grinding disc 22 Active solder layer 23 Abrasive layer 231 External surface 24 Bonding surface 250 Active solder 260 Metal substrate 262 Groove 30 Mold 11 Turntable 13 Abrasive layer 132 Concentric groove 21 Turntable 220 Active solder 230 Metal substrate 232 Groove 25 New active solder layer 26 New abrasive layer 261 External surface 20' Wafer grinding disc 19