201219830 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種藉由對被分離之雷射光之間賦 予光線路徑長度差後再加以合成，來延長雷射光的脈衝 寬度之雷射產生裝置及雷射產生方法。 【先前技術】 自以往’已知有一種將脈衝雷射光分離成光線路徑 長度相異的光線路徑，之後再將所分離之脈衝光合成來 任意地改變時間性脈衝寬度之可調整波形的脈衝照射 裝置。 例如曰本特開平11_〇74216號公報所揭示之裝置係 利用第1半透鏡來將雷射光分離成2道雷射光，並以一 對全反射鏡來使在第i半透鏡反射而行進之雷射光的 方向往直交於穿透第1半透鏡而行進之雷射光之方向 彎折，再以配置於該2道雷射光的交叉點之第2 ° 來合成2道雷射光。 干遂鏡 又，日本特開2005-224827號公報所揭示之裝 藉由使雷射光入射至偏光束分割器來反射s偏光成八糸 另一方面使P偏光成分穿透，並藉由一對全反射铲刀， 偏光成分迂迴後，在偏光束分割器再度回到同一 s 4k上，來合成光線路徑長度相異的2種雷射光。' 略 然而，如日本特開平11_074216號公報所揭示 半透鏡(光束分割器）來合成2道雷射光時，由:’以 ;2道雷 201219830 射光會分別再被分離成穿透光與反射光，因此便會產生 實際上往不同方向行進之2道合成光，而有一半的光線 會無法利用。 ' 亦即，入射至半透鏡之2道雷射光會分別被分離成 穿透光與反射光，其中一雷射光的穿透光與另一雷射光 的反射光會被合成，又，其中一雷射光的反射光與另一 雷射光的穿透光會被合成，由於2道合成光會分開往二 個方向射出，因而只能利用其中—合成光，而無法利用 另一合成光。 於疋，日本特開平號公報的技術雖可利 用一對全反射鏡來使逃逸至光線路徑外之一部分的雷 射光回流至光線路徑，但該構成的情況會有最終之合成 脈衝光的波形與未進行回流情況的脈衝光不同之問題。 又，例如使用雷射光之退火處理等中，雖有分別將 複數波長的雷射光延長_寬度後制射之情況 ，但由 於日本特開2005-224827號公報之裝置係延長單一波長 雷射光的脈衝寬度之«置，因此會有無法對應於前述照 射圖案的要求之問題。 【發明内容】 θ於是L本發明為了因應於上述問題點 ，其目的在於 一種藉由對分離後之雷射光之間賦予光線路徑長 又、後再口成來延長雷射光的脈衝寬度(發光時間）之雷 射產生裝置及雷射產生方法，可不浪費地利用雷射光， 201219830 且可谷易地獲得所欲波形的雷射光，還有，可分別將複 數波長的雷射光於延長脈衝寬度後再射出。 ，以’本發明之雷射產生裝置具備有：分離用波長 轉換早7G ’係依波絲絲複數波長的雷射光；及合成 用，長轉換單元，係合成該各種波長的#射光，並射出 該複數波長的雷射光；並於齡離歧長轉換單元所分 離之各種波長具财町單元的組合··分離用偏光轉換 早疋’係依偏域分來分離雷射光；合成祕光轉換單 兀’係合成該分_偏光轉換單元所分離之複數偏光成 ^及光線路徑長度差賦予單心係對該分離用偏光轉 、早7G所分離之偏光成分當中的至少其+ 一者，相對於 :他偏光成分而賦予光線路徑長度差並導向該合成用 2轉換單元；並且’係细該分離用偏鋪換單元來 =分離用波長轉換單元所分離之各波長的雷射光分 2離成偏光成分，並利用該合成用波長轉換單元來合 成5亥合成用偏光轉換料所合成之各波長的雷射光。 上述結構係對所分離之各觀長 ^分離、糾職長度差之料、料光祕^長度差 後之偏光成分的合成，最後再合成 種波長的f㈣。 狀錄«度後之各 此處，藉由該分離用波長轉換單元及 換卓元，便可於錢長的雷射光 二成用波長轉 差，並配合該祕祕長度絲射路徑長度 元依序射出各波長的f射^ “成用波長轉換單 201219830 ㈣ίΐ結構中，延長脈衝寬度後之雷射光會具時間差 異波長’而可藉由光線路徑長度差的設定 來選擇各波長的射出順序。 又 可更具備有：雷射發振單元，係產生單-波長 的雷射光;及高頻波產生單元，係轉換該單-波長雷射 光的波長來產生高頻波。 反長雷射 然後’可使該雷射發振單元為會產生基本波長 賴咖的雷射光之YAG雷射，·該高頻波產生單元可含 有會產生第2高頻波之SHG結晶及赵第3高頻波之 ™G結晶，而輸出至少波長為l〇64mn、532nm、355励 的雷射光。 再者，利用該分離用波長轉換單元所分離之基本波 長雷射光的光線路徑途中可具備有發振波長與該基本 波長相同之雷射發振單元。 上述結構中，利用分離用波長轉換單元所分離之基 本波長雷射光的輸出可在光線路徑途中增強。 又’該分_波長轉換單元及合成用波長轉換單元 可由雙色分光鏡(dichroic mirror)或雙色棱鏡(dichr〇ic prism)所構成，再者，該分離用波長轉換單元及合成用 波長轉換單元可具有會讓穿透、反射之波長各自相異之 複數雙色刀光鏡或雙色棱鏡，並於光線路徑上選擇性地 設置有該複數雙色分光鏡或雙色稜鏡當中的其中一者。 又，該分離用偏光轉換單元及合成用偏光轉換單元 可由偏光束分割器所構成，再者，該光線路徑長度差賦201219830 VI. Description of the Invention: [Technical Field] The present invention relates to a laser generating apparatus for extending the pulse width of laser light by imparting a difference in length of a light path between separated laser light And laser generation methods. [Prior Art] A pulse irradiation device that separates pulsed laser light into light path paths having different light path lengths and then combines the separated pulsed light to arbitrarily change the adjustable pulse width of the temporal pulse width is known. . For example, the apparatus disclosed in Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. 74216 uses a first semi-lens to separate laser light into two laser beams, and a pair of total reflection mirrors are used to reflect and travel on the i-th half lens. The direction of the laser light is bent in the direction perpendicular to the laser light that travels through the first semi-lens, and the two laser beams are combined at the second angle of the intersection of the two laser beams. In addition, the device disclosed in Japanese Laid-Open Patent Publication No. 2005-224827 reflects the s-polarized light into the gossip by causing the laser light to be incident on the partial beam splitter, and the P-polarized component is penetrated by the pair. The total reflection blade, after the polarization component is turned back, is again returned to the same s 4k in the partial beam splitter to synthesize two kinds of laser light with different light path lengths. However, when a half lens (beam splitter) disclosed in Japanese Laid-Open Patent Publication No. Hei 11-074216 is used to synthesize two laser beams, it is divided into: transmitted light and reflected light by 2; Therefore, two synthetic lights that actually travel in different directions are generated, and half of the light is unusable. That is, the two laser beams incident on the half lens are separated into the transmitted light and the reflected light, respectively, and the reflected light of one of the laser light and the reflected light of the other of the laser light are combined, and one of the thunder The reflected light of the emitted light and the transmitted light of the other laser light are synthesized. Since the two synthetic lights are emitted separately in two directions, only the synthesized light can be utilized, and the other synthesized light cannot be utilized. Yu Yu, the technique of the Japanese Laid-Open Patent Publication, although a pair of total reflection mirrors can be used to recirculate the laser light that escapes to a portion of the light path to the light path, but the configuration of the final composite pulsed light waveform and The pulse light that does not have a reflow condition is different. Further, for example, in the case of annealing treatment using laser light or the like, the laser light of a plurality of wavelengths is extended by _width and then emitted. However, the apparatus of Japanese Laid-Open Patent Publication No. 2005-224827 extends the pulse of single-wavelength laser light. Since the width is set, there is a problem that the requirements of the aforementioned illumination pattern cannot be met. SUMMARY OF THE INVENTION In order to cope with the above problems, the present invention aims to extend the pulse width (light-emitting time) of the laser light by imparting a long and subsequent light path between the separated laser light. The laser generating device and the laser generating method can use the laser light without waste, and can obtain the laser light of the desired waveform in 201219830, and can separately irradiate the laser light of the complex wavelength to the extended pulse width. Shoot out. The laser generating device of the present invention includes: a laser beam for separating wavelengths of 7G from the wavelength of the wave of the complex wave; and a synthesis and long conversion unit for synthesizing the light of the various wavelengths and emitting the light. The laser light of the complex wavelength; and the combination of the various wavelengths of the yin-cho unit separated by the age-distance-distance conversion unit, the polarization conversion of the separation, the separation of the laser light by the partial domain, and the synthesis of the secret light conversion兀' is a composite of the sub-polarization conversion unit, and the difference in the length of the ray path is given to at least one of the polarization components of the single-center system for separating the polarized light for separation and 7G, which is relative to : he polarized the component to give a difference in the length of the light path and directed to the 2 conversion unit for synthesis; and 'the fine separation unit for the separation = the laser light of each wavelength separated by the wavelength conversion unit for separation 2 is polarized The composition is used to synthesize the laser light of each wavelength synthesized by the polarization conversion material for synthesis of 5 Hz by the synthesis wavelength conversion unit. The above-mentioned structure synthesizes the polarization components of the separated lengths of the separated lengths, the lengths of the corrections, and the difference in the length of the light, and finally synthesizes the wavelength f(4). After the record « degrees, each of the wavelength conversion units and the exchange element can be used to convert the length of the laser light into two wavelengths, and the length of the silk path is matched with the secret length. The radiation emission of each wavelength is sequentially performed. In the structure, the laser light after extending the pulse width has a time difference wavelength ', and the emission order of each wavelength can be selected by setting the light path length difference. Further, the laser excitation unit is configured to generate single-wavelength laser light; and the high-frequency wave generating unit converts the wavelength of the single-wavelength laser light to generate a high-frequency wave. The anti-long laser then enables the mine The transmitting and oscillating unit is a YAG laser that generates laser light of a basic wavelength, and the high-frequency generating unit may include a TMG crystal that generates a second high-frequency wave and a TMG crystal of a third high-frequency wave, and the output has a wavelength of at least l. 〇64 nm, 532 nm, 355 excitation laser light. Further, the light path of the fundamental wavelength laser light separated by the separation wavelength conversion unit may have the same oscillation wavelength as the fundamental wavelength In the above configuration, the output of the fundamental wavelength laser light separated by the separation wavelength conversion unit can be enhanced in the middle of the light path. Further, the sub-wavelength conversion unit and the composite wavelength conversion unit can be split by two colors. a dichroic mirror or a dichroic prism, and the wavelength conversion unit for separation and the wavelength conversion unit for synthesis may have a plurality of two-color knife lights that cause different wavelengths of penetration and reflection. a mirror or a two-color prism, and one of the plurality of dichroic beamsplitters or the two-color pupils is selectively disposed on the light path. Further, the separation polarization conversion unit and the composite polarization conversion unit may be configured by a beam splitter Composition, again, the difference in the length of the ray path
S 201219830 予單元可由全反射鏡所構成。 再者，該鎌路徑長度差略單元可於使幾何學的 光線，徑長度較其他要長之偏光成分的光線路徑上配 置有尚折射率光學媒質所構成。上述結構中，藉由在光 線路徑上配置有高折射率光學媒f，便可使絲性光線 路徑長較幾何學光線路徑長度要長，從而可賦予 光線路徑長度差。 ' 一又，本發明之雷射產生裝置包含有：分離用雙色分 光鏡，係依波長來分離包含有基本波與至少j種高頻波 之雷射光；分離用偏光束分割器，係將各波長的雷射光 分別分離成2種偏光成分；一對全反射鏡，係將在該分 離用偏光束分割器所反射之偏光成分的光線路徑往交 叉於穿透該分離用偏光束分割器的偏光成分之方向彎 折；合成用偏光束分割器，係將穿透該分離用偏光束分 割器的偏光成分，與在該分離用偏光束分割器反射並藉 由該全反射鏡而使得光線路徑彎折之偏光成分合成在 同一光軸上；及合成用雙色分光鏡，係將該合成用偏光 束分割器所合成之各波長的雷射光合成在同一光軸上。 上述結構中，利用雙色分光鏡來將雷射光依波長分 離後之各波長的雷射光係分別藉由偏光束分割器而被 分離成2種偏光成分。在偏光束分割器反射後之偏光成 分會因在一對全反射鏡反射’而朝向較穿透偏光束分割 益的偏光成分要長之光線路徑行進，利用偏光束分割器 來合成賦予光線路徑長度差後之 2種偏光成分，再者， 201219830 將合成偏光成分所獲得之各波長的雷射光利用合成用 雙色分光鏡來加以合成。 又，本發明之雷射產生方法包含有以下步驟：依波 長來分離包含有基本波與至少丨種高頻波之雷射光之 步驟；分別依偏光成分來分離各波長的雷射光之步驟； 對分離後的偏光成分之間賦予光線路徑長度差之步 驟；合成被賦予光線路徑長度差後的偏光成分之步驟； 及合成已合成偏光成分後之各波長的雷射光之步驟。 上述結構中，係依波長來分離包含有基本波與至少 1種咼頻波之雷射光，分別依偏光成分來分離已分離後 之各波長的雷射光，針對分離後之各偏光成分賦予光線 路徑長度差後再加以合成，再將該合成偏光成分後之各 波長的雷射光加以合成。 然後，依據本發明之雷射產生裝置及雷射產生方 法，由於藉由利用偏光成分之振動方向的差異之偏光轉 換(反射、穿透），便可合成賦予光線路徑長度差(相位差) 後之雷射光，因此可將合成後之雷射光往一方向射出， 從而可提高賦予光線路徑長度差並延長脈衝寬度後之 田射光的利用效率’並且由於*會發生雷射光逃逸至光 線路徑外，因此不需為了確保彻效率之回流，從而可 避免回流所造成之波形變化。 再者，由於係將複數波長的雷射光依波長來分離 後’分離絲光成分並辭光線_長度差後再合成， 並再將合成偏光成分後之各波長的雷射光加以合成，因The S 201219830 pre-unit can be constructed from a total reflection mirror. Furthermore, the meandering path length difference unit can be formed by arranging a refractive index optical medium on a light path having a geometric length of light and a longer polarization component. In the above configuration, by arranging the high refractive index optical medium f on the optical path, the filament light path length can be made longer than the geometric light path length, and the light path length difference can be imparted. Further, the laser generating apparatus of the present invention comprises: a two-color spectroscope for separation, which separates laser light including a fundamental wave and at least j kinds of high-frequency waves by wavelength; and a separating beam splitter for each wavelength The laser light is separated into two kinds of polarization components respectively; a pair of total reflection mirrors cross the light path of the polarization component reflected by the separation beam splitter to the polarization component penetrating the separation beam splitter Directional bending; a combined beam splitter that penetrates the polarization component of the separation beam splitter and is reflected by the separation beam splitter and bends the light path by the total reflection mirror The polarization components are synthesized on the same optical axis; and the two-color spectroscope for synthesis combines the laser beams of the respective wavelengths synthesized by the combined beam splitter on the same optical axis. In the above configuration, the laser light beams of the respective wavelengths obtained by separating the laser light by the two-color spectroscope are separated into two kinds of polarized light components by a beam splitter. The polarized light component reflected by the partial beam splitter will travel toward the light path longer than the polarized component of the split polarized beam splitting due to the reflection of a pair of total reflection mirrors, and the length of the light path is synthesized by the partial beam splitter. Two kinds of polarizing components after the difference, and further, 201219830, the laser light of each wavelength obtained by synthesizing the polarizing component is synthesized by the two-color spectroscope for synthesis. Moreover, the laser generating method of the present invention includes the steps of: separating the laser light including the fundamental wave and the at least one high-frequency wave according to the wavelength; and separating the laser light of each wavelength according to the polarization component; a step of imparting a difference in length of the light path between the polarized components; a step of synthesizing the polarized component after the difference in the length of the light path; and a step of synthesizing the laser light of each wavelength after synthesizing the polarized component. In the above configuration, the laser light including the fundamental wave and the at least one type of chirp wave is separated according to the wavelength, and the separated laser light of each wavelength is separated by the polarization component, and the light path is given to each of the separated polarization components. After the length difference, the synthesis is performed, and the laser light of each wavelength after synthesizing the polarization component is synthesized. Then, according to the laser generating apparatus and the laser generating method of the present invention, since the polarization path length difference (phase difference) can be synthesized by using the polarization conversion (reflection, penetration) of the difference in the vibration direction of the polarization component. The laser light can be used to emit the synthesized laser light in one direction, thereby improving the utilization efficiency of the field light after the length difference of the light path is extended and the pulse width is extended, and since the laser light escapes to the light path, Therefore, it is not necessary to ensure the reflow of the efficiency, so that the waveform change caused by the reflow can be avoided. Furthermore, since the laser light of the complex wavelength is separated by the wavelength, the mercerized component is separated and the length of the light is _ length difference, and then the laser light of each wavelength after synthesizing the polarization component is synthesized.
S 201219830 此可延長各波長之雷射光的脈衝寬度，並且，可藉由各 波長間之光線路徑長度差的設定，來任意地設定各波長 之雷射光的射出順序。 【實施方式】 圖1係顯示包含本發明雷射產生裝置且使用本發 明雷射產生方法之雷射退火裝置的方塊圖。 、圖1所示之雷射退火裝置1係將雷射光3照射在形 f於基板2上之半導體膜(省略目^)，來使半導體膜熔 融固化而結晶化’其係進行對例如非晶石夕膜照射雷射 光來使其聚矽化之雷射退火。 、褒置1 角负街射產生裒置4、調整來 自雷射產生裝置4之雷射光使其成為例如線狀光束而 聚光在半導體膜表面之光束調整光學系統5、及用以載 置基板2之基板載置台6。 雷射赵裝置4係具備有作為f射光狀YAG雷 ，（雷射發振單元)11、產生第2高頻波之SHG結晶(高 =產生單元）、產生第3高頻波之THG結晶13(高頻 2生早⑹’還有’可延長雷射光的脈衝寬度之脈衝 寬度延長器14。 YAG雷射n係由YAG棒與閃光燈的組合所構成 =發振波長lG64nm的固體雷射，又，SHG結晶12會 =基本波長λ的1/2之532nm波長的雷射光(第^ )，THG結晶13會產生基本波長的1/3之355nm波 201219830 長的雷射光（第3高頻波），而將波長1〇64nm、532nm、 355nm的雷射光射出至脈衝寬度延長器14。但，雷射 光源不限於YAG雷射11，而亦可為例如準分子雷射等 其他的固财射，是以，雷射光絲树長二限定 於 1064nm。 脈衝寬度延長器14如圖2所示，係具備有雙色分 光鏡31〜34、偏光束分割器5卜52、全反射鏡41〜44等 光學元件。 圖2中，包含來自THG結晶13之波長1〇64nm、 532nm、355nm的雷射光LS(基本波、第2高頻波、第 3高頻波的合成波）會入射至鏡面傾斜45deg而配置於雷 射光LS的光轴上之第1雙色分光鏡31(分離用波長轉 換單元）。此外，亦可使用雙色稜鏡來取代雙色分光鏡 31〜34 〇 第1雙色分光鏡31的特性係波長355nm以下的光 線（雷射光L3，第3南頻波）會穿透，而波長大於355nm 的光線（1064nm、532nm的雷射光LI、L2 ;基本波、第 2高頻波)則會反射。 於是，入射至第1雙色分光鏡31之3種波長 1064nm、532nm、355nm 的雷射光 LS 當中，波長 355nm 的雷射光L3便會穿透第1雙色分光鏡31而直線行進， 另一方面，波長l〇64nm、532nm的雷射光li、L2則會 相對於第1雙色分光鏡31的鏡面以入射角45deg入射 並反射，於是雷射光LI、L2便會相對於針對第1雙色 201219830 分光鏡31之入射方向彎折90deg而行進。 藉此，包含1064nm、532nm、355nm的波長之雷 射光LS便會被分離成波長355nm的雷射光L3與波長 1064nm、532nm的雷射光LI、L2之2種光束。 在第1雙色分光鏡31反射之雷射光L1、L2的光轴 上係配置有鏡面與第1雙色分光鏡31呈平行之第2雙 色分光鏡32(分離用波長轉換單元），於是在第丨雙色分 光鏡31反射之雷射光L1、L2便會入射至第2雙色分光 鏡32。 第2雙色分光鏡32的特性係波長i〇64nm以上的 光（雷射光L1 ;基本波)會穿透，而波長小於i〇64nm的 光線(波長532nm的雷射光L2;第2高頻波)則會反射。 於是，入射至第2雙色分光鏡32之2種波胃長 l〇64mn、532nm的雷射光L1、L2當十，波長i〇^4nm 的雷射光L1會穿透第2雙色分光鏡32而沿著第i、第 2雙色分光鏡31、32的配列方向直線行進，另一方面， 波長532nm的雷射光L2則會相對於第2雙色分光鏡32 的鏡面以入射角45deg入射並反射，於是又雷射刀二 會相對於針對第2雙色分光鏡32之人射方㈣折9一 地朝向圖2之右侧’亦即，平行於針對 •5 1 ^ 卞第1雙色分光鏡 31之雷射光LS的入射方向而行進。 藉此，便會在第2雙色分域32處被分離成波長 1()64麵的雷射光L1與波長532nm的雷射光^^種 光束。 201219830 /又’穿透第2雙色分光鏡32之雷射光L1的光軸上 係配置有鏡面與第1雙色分光鏡31及第2雙色分光鏡 32*^平订之第1全反射鏡41 ’穿透第2雙色分光鏡32 之田射光L1會相對於第丨全反射鏡41的鏡面而以 45deg的入射角入射並反射，於是雷射光便會相對 於針對第1全反射鏡41之入射方向f折90deg地朝向 圖2之右侧’亦即，平行於針對第！雙色分光鏡w之 雷射光LS的入射方向而行進。 、如上所述，藉由在第〗雙色分光鏡31及第2雙色 勿光鏡32(分離用波長轉換單元)處之穿透、反射，於是 包含3種波長i〇64nm、532nm、355nm之雷射光LS便 會被分離成波長l〇64nm(基本波長)的雷射光！^(基本 波)、波長532nm的雷射光L2(第2高頻波)與波長355nm 的雷射光L3(第3高頻波)之3種光束。 再者，穿透第1雙色分光鏡31之雷射光L3、在第 2雙色分光鏡32反射之雷射光L2與在第1全反射鏡41 反射之波長1064nm的雷射光L1會成為相互平行且朝 同一方向（圖2之右侧)行進之雷射光。 如此地’使用偏光束分割器51、52及全反射鏡42、 43來對依波長被分離成3種光束之雷射光LI、L2、L3 分別的脈衝寬度施予延長處理。 該延長脈衝寬度之處理係藉由分離用偏光束分割 器51(分離用偏光轉換單元)來將雷射光依偏光成分分 離成2道，並利用全反射鏡42、43來使分離後之偏光S 201219830 This can extend the pulse width of the laser light of each wavelength, and can arbitrarily set the emission order of the laser light of each wavelength by setting the difference in the length of the light path between the wavelengths. [Embodiment] Fig. 1 is a block diagram showing a laser annealing apparatus including the laser generating apparatus of the present invention and using the laser generating method of the present invention. In the laser annealing apparatus 1 shown in FIG. 1, the laser light 3 is irradiated onto the semiconductor film on the substrate 2 (omitted), and the semiconductor film is melt-solidified and crystallized. The stone film irradiates the laser light to anneal it to the laser. And a light-receiving optical system 5 for adjusting the laser light from the laser generating device 4 to be condensed on the surface of the semiconductor film, for example, and for mounting the substrate 2 substrate mounting table 6. The laser device 4 includes a SHG crystal (high-generation unit) that generates a second high-frequency wave, and a THG crystal 13 that generates a third high-frequency wave (high-frequency 2). Early life (6) 'there is a pulse width extender 14 that can extend the pulse width of the laser light. YAG laser n is composed of a combination of YAG rod and flash lamp = solid laser with a vibration wavelength of lG64nm, and SHG crystal 12 Will be = 1/2 of the fundamental wavelength λ of the 532 nm wavelength of the laser light (the second), the THG crystal 13 will produce a 1/3 of the basic wavelength of the 355 nm wave 201219830 long laser light (the third high frequency wave), and the wavelength 1 〇 The laser light of 64 nm, 532 nm, and 355 nm is emitted to the pulse width extender 14. However, the laser light source is not limited to the YAG laser 11, but may be other solid radiation such as excimer laser, or the laser light. The tree length 2 is limited to 1064 nm. As shown in Fig. 2, the pulse width extender 14 is provided with optical elements such as two-color spectroscopes 31 to 34, a beam splitter 5 52, and total reflection mirrors 41 to 44. Contains laser light LS (basic wave, wavelength from 1 to 64 nm, 532 nm, 355 nm from THG crystal 13) The second dichroic wave and the third high-frequency wave are combined to enter the first dichroic beam splitter 31 (separation wavelength conversion unit) which is disposed on the optical axis of the laser light LS by 45 deg., and a two-color 稜鏡 can also be used. In place of the two-color spectroscopes 31 to 34, the characteristics of the first dichroic beam splitter 31 are such that light having a wavelength of 355 nm or less (laser light L3, third south frequency wave) penetrates, and light having a wavelength of more than 355 nm (light of 1064 nm, 532 nm) The incident light L1, L2, and the fundamental wave and the second high-frequency wave are reflected. Therefore, among the three kinds of laser light LS having wavelengths of 1064 nm, 532 nm, and 355 nm incident on the first dichroic beam splitter 31, the laser light L3 having a wavelength of 355 nm is worn. The first dichroic beam splitter 31 travels straight through the first dichroic beam splitter 31. On the other hand, the laser beams li and L2 having wavelengths of 〇64 nm and 532 nm are incident on the mirror surface of the first dichroic beam splitter 31 at an incident angle of 45 deg and are reflected, so that the laser beam is incident. LI and L2 travel with respect to the incident direction of the first two-color 201219830 beam splitter 31 by 90 deg. Thereby, the laser light LS including the wavelengths of 1064 nm, 532 nm, and 355 nm is separated into laser light L3 having a wavelength of 355 nm. And wavelength Two kinds of light beams of laser light LI and L2 of 1064 nm and 532 nm. The second dichroic spectrum in which the mirror surface is parallel to the first dichroic beam splitter 31 is disposed on the optical axes of the laser beams L1 and L2 reflected by the first dichroic beam splitter 31. The mirror 32 (wavelength separating unit for separation) is then incident on the second dichroic beam splitter 32 by the laser beams L1 and L2 reflected by the second dichroic beam splitter 31. The characteristics of the second dichroic beam splitter 32 are such that light having a wavelength of i 〇 64 nm or more (laser light L1; fundamental wave) penetrates, and light having a wavelength smaller than i 〇 64 nm (laser light L2 having a wavelength of 532 nm; second high frequency wave) reflection. Then, two types of laser light L1, 64 nm, 532 nm of laser light L1, L2 incident on the second dichroic beam splitter 32 are ten, and the laser light L1 having a wavelength of i〇^4 nm penetrates the second dichroic beam splitter 32. The arrangement direction of the i-th and second dichroic beamsplitters 31 and 32 travels straight, and on the other hand, the laser light L2 having a wavelength of 532 nm is incident on the mirror surface of the second dichroic beam splitter 32 at an incident angle of 45 deg and is reflected, so that The laser knife 2 is directed toward the right side of FIG. 2 with respect to the person's square (four) for the second dichroic beam splitter 32, that is, parallel to the laser light for the first dichroic beam splitter 31 for the 5 1 ^ 卞The direction of incidence of the LS travels. Thereby, the laser light beam L1 having a wavelength of 1 () 64 and the laser beam having a wavelength of 532 nm are separated at the second dichroic domain 32. 201219830 / Further, the first total reflection mirror 41 ' is disposed on the optical axis of the laser light L1 penetrating the second dichroic beam splitter 32 with a mirror surface and a first dichroic beam splitter 31 and a second dichroic beam splitter 32*^. The field light L1 penetrating the second dichroic beam splitter 32 is incident and reflected at an incident angle of 45 deg with respect to the mirror surface of the second total reflection mirror 41, so that the laser light is incident with respect to the first total reflection mirror 41. f fold 90deg toward the right side of Figure 2, that is, parallel to the first! The two-color spectroscope w travels in the incident direction of the laser light LS. As described above, by the penetration and reflection at the second dichroic beam splitter 31 and the second dichroic mirror 32 (separation wavelength conversion unit), three kinds of wavelengths i〇64 nm, 532 nm, and 355 nm are included. The LS will be separated into laser light with a wavelength of l〇64nm (basic wavelength)! ^ (basic wave), three kinds of light beams of laser light L2 (second high frequency wave) having a wavelength of 532 nm and laser light L3 (third high frequency wave) having a wavelength of 355 nm. Further, the laser light L3 penetrating through the first dichroic beam splitter 31, the laser beam L2 reflected by the second dichroic beam splitter 32, and the laser beam L1 having a wavelength of 1064 nm reflected by the first total reflection mirror 41 are parallel to each other and Laser light traveling in the same direction (on the right side of Figure 2). Thus, the pulse widths of the laser beams LI, L2, and L3 separated into three types of light beams by wavelengths are extended by the partial beam splitters 51 and 52 and the total reflection mirrors 42 and 43. The process of the extended pulse width is performed by separating the polarization beam splitter 51 (separation polarization conversion unit) to separate the laser light into two directions, and using the total reflection mirrors 42, 43 to separate the polarized light.
S 12 201219830 成分當中的其中一者在較另一者要長之光線路徑上行 進以職予光線路徑長度差(相位差)後，再使用合成用偏 光束分割器52(合成用偏光轉換單元)來加以合成。 具體來說，穿透第1雙色分光鏡31之雷射光L3 的光轴上係配置有偏光膜與第1雙色分光鏡31的鏡面 呈平行之第1偏光束分割器51(L3)。 此外’偏光束分割器51、52可使用例如於45deg 直角稜鏡的斜面塗佈並接著有偏光膜之立方體狀者。 穿透第1雙色分光鏡31之雷射光L3會以入射角 45deg入射至第1偏光束分割器51(L3)的偏光膜，於是 雷射光L3的P偏光成分L3P便會穿透第1偏光束分割 器51(L3)而行進，另一方面，雷射光L3的s偏光成分 L3S會在第1偏光束分割器51(L3)反射，於是S偏光成 分L3S便會相對於針對第1偏光束分割器51(L3)的偏光 膜之入射方向彎折90deg地朝向圖2之下方行進。藉 此’波長355nm的雷射光L3便會藉由第1偏光束分割 器51(L3)而被分離成P偏光成分L3P與S偏光成分L3S 的2種光束。 在第1偏光束分割器51(L3)反射之S偏光成分L3S 的光軸上係配置有鏡面與第1偏光束分割器51(L3)的偏 光膜呈平行之第2全反射鏡42(L3)。 藉此，在第1偏光束分割器51(L3)反射之S偏光成 分L3S便會以45deg的入射角入射至第2全反射鏡 42(L3)並反射，且相對於針對第2全反射鏡42(L3)之入 13 201219830 射方向彎折90deg地朝向圖2之右侧，亦即，平行於針 對第1偏光束分割器51 (L3)之雷射光L3的入射方向而 行進。 又，在第2全反射鏡42(L3)反射之S偏光成分L3S 的光軸上係設置有鏡面與第2全反射鏡42(L3)呈線對稱 之第3全反射鏡43(L3)。 藉此’在第2全反射鏡42(L3)反射之雷射光L3的 S偏光成分L3S便會以45deg的入射角入射至第3全反 射鏡43(L3)並反射，且相對於針對第3全反射鏡43(L3) 之入射方向彎折90deg地朝向圖2之上方，亦即，朝向 直交（交叉)於穿透第1偏光束分割器51(L3)之雷射光L3 之P偏光成分L3P的光軸之方向行進。 穿透第1偏光束分割器51(L3)之雷射光L3的卩偏 光成分L3P與在第3全反射鏡43(L3)反射之雷射光L3 的S偏光成分L3S相交叉之位置處，係配置有偏光膜與 第3全反射鏡43(L3)的鏡面呈平行之第2偏光束分割器 52(L3)(合成用偏光轉換單元）。 於第2偏光束分割器52(L3)處，穿透第1偏光束分 割器51(L3)之雷射光L3的P偏光成分L3P會直接穿 透，另一方面，在第3全反射鏡43(L3)反射之雷射光 L3的S偏光成分L3S則會因以入射角45deg入射至第 2偏光束分割器52(L3)並反射，而彎折90deg地朝向平 行於P偏光成分L3P的光軸之方向行進，結果，雷射光 L3的S偏光成分L3S與P偏光成分L3P便會被合成而 201219830 射出。 此處’ S偏光成分L3S在與P偏光成分L3P分離 後，由於會經由藉由一對全反射鏡42(L3)、43(L3)(光線 路徑長度差賦予單元）而反射之光線路徑，再度被合成 至P偏光成分L3P，因此S偏光成分L3S的幾何學光線 路徑長度便會較P偏光成分L3P要長上第1偏光束分割 器51(L3)與第2全反射鏡42(L3)之距離D1(D1=第3全 反射鏡43(L3)與第2偏光束分割器52(L3)的距離）的2 倍。 於是’在第2偏光束分割器52(L3)處合成S偏光成 分L3S與P偏光成分L3P時，S偏光成分L3S的相位 便會較P偏光成分L3P要遲，而使得合成後之雷射光 L3的脈衝寬度較針對第1偏光束分割器51(L3)之雷射 光L3入射時的脈衝寬度要延長相位差部分(光線路徑長 度差部分）。 換言之’雷射光L3的P偏光成分L3P與相位較該 P偏光成分L3P要遲之雷射光L3的S偏光成分L3S會 被合成在同一光軸上並從第2偏光束分割器52(L3)被輸 出。 如上所述，利用第1偏光束分割器51、第2偏光 束分割器52、第2全反射鏡42、第3全反射鏡43的組 合來延長脈衝寬度之光學系統係分別設來作為處理在 弟2雙色分光鏡32反射之波長532nm的雷射光L2之 光學系統，以及處理在第1全反射鏡41反射之波長 15 201219830 1064nm的雷射光L1之光學系統。 亦即，在第2雙色分光鏡32反射之波長532nm的 雷射光L2會在第1偏光束分割器51(L2)處被分離成p 偏光成分L2P與S偏光成分L2S。 然後，S偏光成分L2S會在一對全反射鏡42(L2)、 43(L2)反射並沿著迂迴的光線路徑行進，在與直線行進 之P偏光成分L2P之間賦予光線路徑長度差(相位差） 後’ S偏光成分L2S與P偏光成分L2P便會在第2偏光 束分割器52(L2)被合成而從第2偏光束分割器52(L2) 射出脈衝寬度延長後的雷射光L2。 同樣地’在第1全反射鏡41反射之波長i〇64nm 的雷射光L1會在第1偏光束分割器51(L1)被分離成p 偏光成分L1P與S偏光成分L1S。然後，S偏光成分 L1S會在一對全反射鏡42(L1)、43(L1)反射並沿著迂迴 的光線路徑行進’在與直線行進之P偏光成分Lip之間 賦予光線路徑長度差(相位差)後，S偏光成分L1S與P 偏光成分L1P便會在第2偏光束分割器52(L1)被合成而 從第2偏光束分割器52(li)射出脈衝寬度延長後的雷射 光L1 〇 如上所述，藉由以下的結構來針對各波長的雷射光 L1〜L3分別進行延長脈衝寬度處理，與合成並輸出各波 長的雷射光L1〜L3之處理。 從第2偏光束分割器52(L1)射出之雷射光L1的光 轴上係設置有鏡面與第2偏光束分割器52(L1)的偏光膜 201219830 呈平行之第4全反射鏡44，於是從第2偏光束分割器 52(L1)射出之雷射光L1便會因相對於第4全反射鏡44 以入射角45deg入射並反射，而彎折90deg地朝向圖2 之上方行進。 換言之’ P偏光成分L1P與相位較該p偏光成分 L1P要遲之S偏光成分L1S所構成的雷射光L1會在第 4全反射鏡44反射，而使得方向轉成直交（交叉)於雷射 光LS(雷射光L3)的光軸之方向。 再者’第4全反射鏡44之反射光的光軸與來自第 2偏光束分割器52(L2)之射出光的光軸之交叉點係配置 有鏡面與第4全反射鏡44呈平行之第3雙色分光鏡 33(合成用波長轉換單元）。 第3雙色分光鏡33的特性係與第2雙色分光鏡32 同樣地’波長l〇64nm的雷射光L1會穿透，而波長 532nm的雷射光L2則會反射。 於是’在第4全反射鏡44反射而入射至第3雙色 分光鏡33之雷射光以雖會穿透第3雙色分光鏡33， 但從第2偏光束分割器52(L2)射出之雷射光L2(p偏光 成分L2P與相位較該P偏光成分L2P要遲之S偏光成 分L2S所構成的雷射光L2)則會因以入射角45deg入射 至第3雙色分光鏡33並反射，而彎折9〇deg地與穿透 第3雙色分光鏡33而行進之雷射光u在同軸上被合 成0 此處’入射至第3雙色分光鏡33時，雷射光]^ 17 201219830 的幾何學光線路徑長度會較雷射光L2要長上第2雙色 分光鏡32與第1全反射鏡41之距離D2(D2=第4全反 射鏡44與第雙色分光鏡33的距離）的2倍距離，於是 從第3雙色分光鏡33便會較雷射光L2延遲而射出雷射 光L1。 再者，由於雷射光L2係由P偏光成分L2P與相位 較該P偏光成分L2P要遲之S偏光成分L2S所構成， 而雷射光L1係由p偏光成分L1P與相位較該p偏光成 分L1P要遲之S偏光成分L1S所構成，因此便會以P 偏光成分L2P、S偏光成分L2S、P偏光成分LIP、S偏 光成分L1S的順序從第3雙色分光鏡33輸出❶ 又’來自第3雙色分光鏡33之射出光（雷射光L1、 L2的合成光)的光軸與來自第2偏光束分割器52(L3)之 射出光（雷射光L3)的光軸之交叉點處係配置有偏光面 與第3雙色分光鏡33呈平行之第4雙色分光鏡34(合成 用波長轉換單元）。 第4雙色分光鏡34的特性係與第1雙色分光鏡31 同樣地’波長355nm的雷射光L3會穿透，而l〇64nm、 532nm的雷射光li、l2則會反射。 於是’從第3雙色分光鏡33射出之雷射光U、L2 便會因以入射角45deg入射至第4雙色分光鏡34並反 射，而彎折90deg地朝向圖2之右方行進，另一方面， 從第2偏光束分割器52(L3)射出之雷射光L3則會穿透 第4雙色分光鏡34而行進。 201219830 藉此，來自第4雙色分光鏡34之射出光便會是雷 射光U、L2、L3的合成。 此處，在入射至第4雙色分光鏡34時，雷射光L2 的幾何學光線路徑長度會較雷射光L3要長上第1雙色 分光鏡31與第2雙色分光鏡32之距離D3(D3=第3雙 色分光鏡33與第4雙色分光鏡34的距離）的2倍距離， 於是從第4雙色分光鏡34便會較雷射光L3延遲而射出 雷射光L2。 於是，從第4雙色分光鏡34之射出順序便依序為 雷射光L3、雷射光L2、雷射光L1，更詳細而言係以p 偏光成分L3P、S偏光成分L3S、P偏光成分L2P、S偏 光成分L2S、P偏光成分LIP、S偏光成分L1S的順序 輸出。 亦即，相對於雷射光L1會經由第1雙色分光鏡 31、第2雙色分光鏡32、第1全反射鏡41、第4全反 射鏡44、第3雙色分光鏡33而到達第4雙色分光鏡34, 雷射光L2係會經由第1雙色分光鏡31、第2雙色分光 鏡32、第3雙色分光鏡33而到達第4雙色分光鏡34， 而雷射光L3係會從第1雙色分光鏡31到達第4雙色分 光鏡34，因此會成為「雷射光u的光線路徑長度」^ 「雷射光L2的光線路徑長度」>「雷射紅3的光線路 徑長度」。 然後’由於會因上述域路徑長度差而使得雷射光 L2的相位較雷射光L3要遲，再者，雷射光u的相位 201219830 會較雷射光L2要遲，因此從第4雙色分光鏡34之射出 順序便會如上所述地，成為雷射光L3(波長355)、雷射 光L2(波長532nm)、雷射光L1(波長i〇64nm)的順序， 本實施形態之雷射退火裝置1中，係以雷射光L3(波長 355)、雷射光L2(波長532nm)、雷射光L1(波長i〇64nm；) 的順序照射至半導體膜。 再者，由於各雷射光L1〜L3係將P偏光成分 L1P〜L3P與相位較該p偏光成分L1P〜L3P要遲之s偏 光成分L1S〜L3 S合成在同一光轴上而輸出，因此從第4 雙色分光鏡34之射出順序便會成為雷射光L3的p偏光 成分L3P、雷射光L3的S偏光成分L3S、雷射光L2的 P偏光成为L2P、雷射光L2的S偏光成分L2 S、雷射 光L1的P偏光成分L1P、雷射光L1的S偏光成分us 之順序。 依據上述結構，由於係以第1偏光束分割器51依 偏光成分來將單一波長的雷射光分離，利用全反射鏡 42、43來使其中一偏光成分沿著迂迴的光線路徑行進， 並以第2偏光束分割器52來合成該迁迴後(賦予光線路 徑長度差後)之其中一偏光成分與直線行進之另一偏光 成分以延長脈衝寬度，因此可使延長脈衝寬度後的雷射 光以光束朝一方向射出，而可有效地利用。 亦即，使賦予光線路徑長度差後之2道雷射光入射 至光束分割器（半透鏡)並加以合成之情況，由於所合成 之2道雷射光會在合成用光束分割器處反射、穿透而分One of the components of S 12 201219830 travels on the light path longer than the other to serve the light path length difference (phase difference), and then uses the combined partial beam splitter 52 (synthesis polarization conversion unit) To synthesize. Specifically, the first beam splitter 51 (L3) in which the polarizing film is parallel to the mirror surface of the first dichroic beam splitter 31 is disposed on the optical axis of the laser beam L3 that has penetrated the first dichroic beam splitter 31. Further, the partial beam splitters 51, 52 may be coated with a bevel of, for example, a 45 deg right angle 并 and then have a cube shape of a polarizing film. The laser light L3 penetrating the first dichroic beam splitter 31 is incident on the polarizing film of the first beam splitter 51 (L3) at an incident angle of 45 deg, so that the P-polarized component L3P of the laser light L3 penetrates the first partial beam. The splitter 51 (L3) travels, and the s-polarized component L3S of the laser light L3 is reflected by the first beam splitter 51 (L3), so that the S-polarized component L3S is split with respect to the first partial beam splitter. The incident direction of the polarizing film of the device 51 (L3) is bent 90 degrees toward the lower side of FIG. The laser light L3 having a wavelength of 355 nm is separated into two types of light beams of the P-polarized component L3P and the S-polarized component L3S by the first partial beam splitter 51 (L3). The second total reflection mirror 42 in which the mirror surface is parallel to the polarizing film of the first partial beam splitter 51 (L3) is disposed on the optical axis of the S-polarized component L3S reflected by the first partial beam splitter 51 (L3) (L3) ). Thereby, the S-polarized component L3S reflected by the first partial beam splitter 51 (L3) enters the second total reflection mirror 42 (L3) at an incident angle of 45 deg and is reflected, and is opposed to the second total reflection mirror. In the case of 42 (L3), the 2012 201230 direction is bent 90 deg toward the right side of FIG. 2, that is, parallel to the incident direction of the laser light L3 for the first beam splitter 51 (L3). Further, a third total reflection mirror 43 (L3) whose mirror surface is line-symmetrical with the second total reflection mirror 42 (L3) is provided on the optical axis of the S-polarized component L3S reflected by the second total reflection mirror 42 (L3). The S-polarized component L3S of the laser light L3 reflected by the second total reflection mirror 42 (L3) is incident on the third total reflection mirror 43 (L3) at an incident angle of 45 deg and is reflected, and is directed to the third The incident direction of the total reflection mirror 43 (L3) is bent 90 deg toward the upper side of FIG. 2, that is, the P-polarized component L3P that is orthogonal (cross) to the laser light L3 penetrating the first partial beam splitter 51 (L3). The direction of the optical axis travels. The 卩-polarized component L3P of the laser light L3 penetrating the first partial beam splitter 51 (L3) and the S-polarized component L3S of the laser light L3 reflected by the third total reflection mirror 43 (L3) are arranged at a position The second polarizing beam splitter 52 (L3) (synthesis polarization conversion unit) in which the polarizing film is parallel to the mirror surface of the third total reflection mirror 43 (L3). At the second partial beam splitter 52 (L3), the P-polarized component L3P of the laser light L3 penetrating the first partial beam splitter 51 (L3) directly penetrates, and on the other hand, the third total reflection mirror 43 (L3) The S-polarized component L3S of the reflected laser light L3 is incident on the second beam splitter 52 (L3) at an incident angle of 45 deg and is reflected, and is bent 90 deg toward the optical axis parallel to the P-polarized component L3P. As a result, the S-polarized component L3S and the P-polarized component L3P of the laser light L3 are combined and output in 201219830. Here, after the S-polarized component L3S is separated from the P-polarized component L3P, it is again reflected by the ray path reflected by the pair of total reflection mirrors 42 (L3) and 43 (L3) (the ray path length difference providing unit). Since it is synthesized to the P-polarized component L3P, the geometrical ray path length of the S-polarized component L3S is longer than the P-polarized component L3P by the first partial beam splitter 51 (L3) and the second total reflection mirror 42 (L3). The distance D1 (D1 = the distance between the third total reflection mirror 43 (L3) and the second partial beam splitter 52 (L3)) is twice. Then, when the S-polarized component L3S and the P-polarized component L3P are synthesized at the second partial beam splitter 52 (L3), the phase of the S-polarized component L3S is later than the P-polarized component L3P, so that the synthesized laser light L3 is made. The pulse width is longer than the pulse width when the laser light L3 of the first partial beam splitter 51 (L3) is incident, and the phase difference portion (light path length difference portion) is extended. In other words, the P-polarized component L3P of the laser light L3 and the S-polarized component L3S of the laser light L3 whose phase is later than the P-polarized component L3P are combined on the same optical axis and are separated from the second partial beam splitter 52 (L3). Output. As described above, the optical system in which the pulse width is extended by the combination of the first partial beam splitter 51, the second partial beam splitter 52, the second total reflection mirror 42, and the third total reflection mirror 43 is separately set as processing. The optical system of the laser light L2 having a wavelength of 532 nm reflected by the dichroic beam splitter 32 and the optical system for processing the laser light L1 of the wavelength 15 201219830 1064 nm reflected by the first total reflection mirror 41. In other words, the laser light L2 having a wavelength of 532 nm reflected by the second dichroic beam splitter 32 is separated into the p-polarized component L2P and the S-polarized component L2S at the first beam splitter 51 (L2). Then, the S-polarized component L2S is reflected by the pair of total reflection mirrors 42 (L2), 43 (L2) and travels along the meandering ray path, giving a ray path length difference (phase) between the P-polarized component L2P traveling with the straight line. The difference between the S-polarized component L2S and the P-polarized component L2P is combined in the second partial beam splitter 52 (L2) to emit the laser light L2 having the pulse width extended from the second partial beam splitter 52 (L2). Similarly, the laser light L1 at the wavelength i 〇 64 nm reflected by the first total reflection mirror 41 is separated into the p-polarized component L1P and the S-polarized component L1S by the first beam splitter 51 (L1). Then, the S-polarized component L1S is reflected by the pair of total reflection mirrors 42 (L1), 43 (L1) and travels along the meandering light path 'to impart a light path length difference (phase) between the P-polarized component Lip that travels with the straight line After the difference, the S-polarized component L1S and the P-polarized component L1P are combined in the second partial beam splitter 52 (L1) to emit the laser light L1 from the second partial beam splitter 52 (li). As described above, the laser beam L1 to L3 of the respective wavelengths are subjected to the extension pulse width processing and the processing of combining and outputting the laser light L1 to L3 of the respective wavelengths by the following configuration. The fourth total reflection mirror 44 having a mirror surface parallel to the polarizing film 201219830 of the second partial beam splitter 52 (L1) is provided on the optical axis of the laser light L1 emitted from the second partial beam splitter 52 (L1). The laser light L1 emitted from the second partial beam splitter 52 (L1) enters and reflects at an incident angle of 45 deg with respect to the fourth total reflection mirror 44, and travels 90 degrees toward the upper side of FIG. In other words, the laser light L1 composed of the P-polarized component L1P and the S-polarized component L1S whose phase is later than the p-polarized component L1P is reflected by the fourth total reflection mirror 44, and the direction is turned into orthogonal (cross) to the laser light LS. The direction of the optical axis of (laser light L3). Further, the intersection of the optical axis of the reflected light of the fourth total reflection mirror 44 and the optical axis of the light emitted from the second partial beam splitter 52 (L2) is arranged such that the mirror surface is parallel to the fourth total reflection mirror 44. The third dichroic beam splitter 33 (synthesis wavelength conversion unit). The characteristics of the third dichroic beam splitter 33 are similar to those of the second dichroic beam splitter 32. Laser light L1 having a wavelength of l 〇 64 nm penetrates, and laser light L2 having a wavelength of 532 nm is reflected. Then, the laser light that is reflected by the fourth total reflection mirror 44 and incident on the third dichroic beam splitter 33 penetrates the third dichroic beam splitter 33, but is emitted from the second beam splitter 52 (L2). L2 (the laser beam L2P and the laser light L2 composed of the S-polarized component L2S whose phase is later than the P-polarized component L2P) are incident on the third dichroic beam splitter 33 at an incident angle of 45 deg and are reflected, and are bent 9 The laser light u that travels through the third dichroic beam splitter 33 is 合成 合成 合成 合成 0 此处 此处 此处 此处 此处 几何 几何 几何 几何 几何 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 The distance L2 between the second dichroic beam splitter 32 and the first total reflection mirror 41 (D2 = the distance between the fourth total reflection mirror 44 and the dichroic beam splitter 33) is longer than the laser light L2, and thus the third distance is obtained. The two-color spectroscope 33 is delayed from the laser light L2 to emit the laser light L1. Further, since the laser light L2 is composed of the P-polarized component L2P and the S-polarized component L2S whose phase is later than the P-polarized component L2P, the laser light L1 is composed of the p-polarized component L1P and the phase is longer than the p-polarized component L1P. Since the S-polarized component L1S is formed later, the P-polarized component L2P, the S-polarized component L2S, the P-polarized component LIP, and the S-polarized component L1S are outputted from the third dichroic beam splitter 33 in the order of 'the second dichroic beam splitter'. A polarizing surface is disposed at an intersection of an optical axis of the light emitted from the mirror 33 (synthesized light of the laser light L1 and L2) and an optical axis of the light emitted from the second beam splitter 52 (L3) (the laser light L3) The fourth dichroic beam splitter 34 (synthesis wavelength conversion unit) parallel to the third dichroic beam splitter 33. The characteristics of the fourth dichroic beam splitter 34 are similar to those of the first dichroic beam splitter 31. Laser light L3 having a wavelength of 355 nm penetrates, and laser light li and l2 of l〇64 nm and 532 nm are reflected. Then, the laser beams U and L2 emitted from the third dichroic beam splitter 33 are incident on the fourth dichroic beam splitter 34 at an incident angle of 45 deg and are reflected, and are bent toward the right side of FIG. 2 by 90 deg. The laser light L3 emitted from the second partial beam splitter 52 (L3) passes through the fourth dichroic beam splitter 34 and travels. 201219830 Thereby, the light emitted from the fourth dichroic beam splitter 34 is a combination of the laser light U, L2, and L3. Here, when incident on the fourth dichroic beam splitter 34, the geometric light path length of the laser light L2 is longer than the laser light L3 by the distance D3 between the first dichroic beam splitter 31 and the second dichroic beam splitter 32 (D3= The distance between the third dichroic beam splitter 33 and the fourth dichroic beam splitter 34 is twice as long as the fourth dichroic beam splitter 34 is delayed from the laser beam L3 to emit the laser beam L2. Then, the order of emission from the fourth dichroic beam splitter 34 is laser light L3, laser light L2, and laser light L1, and more specifically, p-polarized component L3P, S-polarized component L3S, and P-polarized component L2P, S. The polarized component L2S, the P polarized component LIP, and the S polarized component L1S are sequentially output. That is, the fourth dichroic beam splitting is reached by the first dichroic beam splitter 31, the second dichroic beam splitter 32, the first total reflection mirror 41, the fourth total reflection mirror 44, and the third dichroic beam splitter 33 with respect to the laser light L1. The mirror 34, the laser light L2 reaches the fourth dichroic beam splitter 34 via the first dichroic beam splitter 31, the second dichroic beam splitter 32, and the third dichroic beam splitter 33, and the laser beam L3 is from the first dichroic beam splitter. 31 arrives at the fourth dichroic beam splitter 34, and therefore becomes "the length of the light path of the laser light u" ^ "the length of the light path of the laser light L2" > "the length of the light path of the laser red 3". Then, 'the phase of the laser light L2 is later than the laser light L3 due to the difference in the length of the above-mentioned domain path. Furthermore, the phase 201219830 of the laser light u is later than the laser light L2, so from the fourth dichroic beam splitter 34 As described above, the emission order is the order of the laser light L3 (wavelength 355), the laser light L2 (wavelength 532 nm), and the laser light L1 (wavelength i 〇 64 nm). In the laser annealing apparatus 1 of the present embodiment, The semiconductor film is irradiated in the order of laser light L3 (wavelength 355), laser light L2 (wavelength 532 nm), and laser light L1 (wavelength i 〇 64 nm;). Further, since each of the laser beams L1 to L3 combines the P-polarized components L1P to L3P with the s-polarized components L1S to L3S whose phases are later than the p-polarized components L1P to L3P on the same optical axis, the output is performed. 4 The order of emission of the dichroic beam splitter 34 becomes the p-polarized component L3P of the laser light L3, the S-polarized component L3S of the laser light L3, the P-polarized light of the laser light L2 becomes L2P, the S-polarized component L2 S of the laser light L2, and the laser beam. The order of the P-polarized component L1P of L1 and the S-polarized component us of the laser light L1. According to the above configuration, since the first beam splitter 51 separates the laser light of a single wavelength by the polarization component, the total reflection mirrors 42 and 43 are used to cause one of the polarization components to travel along the bypassed light path, and The partial beam splitter 52 synthesizes one of the polarization components after the relocation (after giving the difference in the length of the light path) and the other polarization component of the straight line to extend the pulse width, so that the laser beam after extending the pulse width can be used as the beam Shoot in one direction and use it effectively. That is, two laser light beams having a difference in length of the light path are incident on the beam splitter (half lens) and combined, since the synthesized two laser beams are reflected and penetrated at the combining beam splitter. And
20 201219830 別朝2個方向被分離，因此合成光亦會朝2個方向被分 開，而無法利用其中一合成光。 相對於此，只要是以第1偏光束分割器51來將雷 射光依偏光成分分離並職予光線路徑長度差後，再以第 2偏光束分_ 52來合成之結構，由於係依偏光方向 來決定會穿透第2偏光束分割器52或在第2偏光束分 割器52反射之其中-者’ g此可將賦予光線路徑長度 差後之2道雷射光合成為-個方向的光束並射出，從而 可有效地利用雷射光’並且由於不會發生雷射光逃逸至 光線路徑外’因此不需為了確保利用效率之回流，從而 可避免回流所造成之波形變化。 又’如本實施形態所述，利用雙色分光鏡31、％ 來將包含基本波L1、第2高頻波L2及 之雷射光依波長分離’並分別針對分離後的雷射光 L1〜U進行延長脈衝寬度處理後，為了將分離後之雷射 光U〜L3導向對應於各雷射光Ll〜u所設置之用以延 長脈衝寬度的光㈣統，録雷射光U〜L3之間賦予 光線路徑長度差，而在合成雷射光Ll〜u時，便會以 對應於該光線路徑長度差之順序射出。 θ 此處，由於藉由選擇會穿透雙色分光鏡之波長，便 可任意地設定雷射光L1〜L3之光線路徑長度的 因此例如退火中，便可基於各雷射光L1〜L32功率或 吸收率等的差異等而以適當的照射順序來射出雷射光 L1〜L3 。 21 201219830 本實施形態的情況，由於係在最後照射功率最大之 基本波長的雷射光L1，因此可避免因在最初照射功率 大的雷射光L1而損傷到非晶矽膜的下層膜❶此外，藉 由會在雙色分光鏡穿透、反射之波長的設定，縱使是在 第2輪照射基本波長的雷射光li，仍可避免損傷到非 晶矽膜的下層膜。 此外，針對包含例如第2高頻波與第3高頻波的任 者與基本波之雷射光，亦可為延長脈衝寬度之裝置。 亦即，雷射光所包含之波長的種類不限於3種，只 要配合波長種類的增減來增減雙色分光鏡的分離階段 數，並且配合該分離階段數來設置偏光束分割器Μ、 52及全反射鏡42、43所構成的光學系統即可/ 又’為了在各雷射光L1〜L3W^mip〜L3p ^ =成分L1S〜L3S之間断超過幾何學光線路徑 =差之光學性光線路徑長度差，如圖3所示，可於例 ^王反射鏡42與全反射鏡43之_光線路徑上配置 商折射率光學媒質61。 -置有 ^光學性光線路徑長度當光線通過某一媒質内 率的著二經過何學長度與該媒質之折射 :=;r光線路徑長度差來抑•二，： 配置於迁迴之偏光 為了增加光學性光線路徑長度20 201219830 Don't separate in two directions, so the combined light will be split in two directions, and one of the synthetic lights cannot be used. On the other hand, as long as the first beam splitter 51 separates the laser light by the polarization component and the difference in the length of the light path, the second beam splitter _ 52 is combined to form a polarization direction. It is determined that the second partial beam splitter 52 can be penetrated or reflected by the second partial beam splitter 52. This can synthesize the two laser beams that give the difference in the length of the light path into a light beam of one direction and It is emitted so that the laser light can be effectively utilized 'and since the laser light does not escape to the outside of the light path', there is no need to ensure the return of the utilization efficiency, thereby avoiding the waveform change caused by the reflow. Further, as described in the present embodiment, the fundamental wave L1, the second high-frequency wave L2, and the laser light are separated by wavelength by the two-color beam splitter 31 and %, and the pulse widths of the separated laser light L1 to U are extended. After the processing, in order to guide the separated laser light U to L3 to the light (four) system corresponding to each of the laser beams L1 to U for extending the pulse width, the difference in the length of the light path is given between the recorded laser beams U to L3. When the laser light L1 to u is synthesized, it is emitted in the order corresponding to the difference in length of the light path. θ Here, since the wavelength of the light path of the laser light L1 to L3 can be arbitrarily set by selecting the wavelength that will penetrate the dichroic beam splitter, for example, in the annealing, the power or absorption rate of each of the laser light L1 to L32 can be based on The laser light L1 to L3 are emitted in an appropriate irradiation order, such as a difference or the like. 21 201219830 In the case of the present embodiment, since the laser light L1 having the fundamental wavelength of the maximum irradiation power is finally applied, it is possible to avoid damage to the underlying film of the amorphous germanium film due to the laser light L1 having a large initial irradiation power. By setting the wavelength at which the two-color spectroscope penetrates and reflects, even if the laser light of the fundamental wavelength is irradiated in the second round, the underlying film of the amorphous ruthenium film can be prevented from being damaged. Further, the laser light including any of the second high-frequency wave and the third high-frequency wave and the fundamental wave may be an apparatus for extending the pulse width. That is, the types of wavelengths included in the laser light are not limited to three types, and the number of separation stages of the two-color spectroscope is increased or decreased by increasing or decreasing the wavelength type, and the partial beam splitter Μ, 52 and the number of the separation stages are set. The optical system formed by the total reflection mirrors 42, 43 can be / in order to reduce the optical ray path length difference between the respective laser beams L1 to L3W^mip to L3p^ = components L1S to L3S beyond the geometric ray path = difference As shown in FIG. 3, the quotient refractive index optical medium 61 can be disposed on the ray path of the exemplified mirror 42 and the total reflection mirror 43. - Set the length of the optical path of the light. When the light passes through a certain medium, the length of the light passes through the length of the medium and the refraction of the medium: =; r the difference in the length of the path of the light to suppress the second, the polarized light that is placed in the relocation Increase the length of the optical path
S 22 201219830 的迁、光線路從上之高折射率光學媒質61可於光 置有例如光學玻璃的棒體或配置有純 (YV〇4)結曰日。 如上所述地设置有高折射率光學媒f 61時，用以 。又=較長的4何學光線路徑之—對全反射鏡42、43與 .玄问折射率絲媒質61便構成了路徑長度差賦予 xtn «— 7Γ. 0 八又，如圖4所示，只要在藉由第2雙色分光鏡32 所刀離之基本波長（波長1〇64nm)之雷射光U的光線路 仏上，置有具備yAg棒71與閃光燈72之雷射腔（雷射 發振單70)73 ’來使該雷射腔73與YAG雷射11同步發 振’便可在光線路徑途中增強雷射光L1，最終可提高 從第4雙色分光鏡34射出之雷射光L1的強度。 再者’藉由使在該雷射腔73增強後之雷射光L1 通過SHG結晶、THG結晶，來再度產生包含基本波、 第2向頻波、第3高頻波之雷射光LS，並使雷射光LS 入射至該雙色分光鏡31〜34、全反射鏡41、44及各之 偏光束分割器51、52與全反射鏡42、43所構成的光學 系統’便可更多階段地延長脈衝寬度。 又’具備該雷射腔73之結構中還可再設置有上述 高折射率光學媒質61。 又’藉由在分離後之各雷射光L1〜L3之光線路徑 上的至少其中一者配置有衰減片，便可調整最終合成、 射出時之雷射光L1〜L3間的強度平衡。 23 201219830 再者，上述實施形態雖顯示使用本發明之雷射產生 裝置及雷射產生方法於雷射退火裝置1之範例，但適用 對象不限於雷射退火裝置1。 又，上述實施形態中，全反射鏡、偏光束分割器、 雙色分光鏡係雷射光會彎折9〇deg之結構，但彎折角度 不限於90deg(入射角為45deg)，例如圖5(A)、（B)所示， 亦可往相對於入射光的光軸呈斜向地交叉之方向彎折。 圖5(A)所示之範例中，偏光束分割器51及全反射 鏡42雖設置為偏光面、反射面係相對於入射光的光軸 傾斜45deg來使入射角為45deg，而在偏光束分割器51 之反射光及在全反射鏡42之反射光會往相對於入射光 的光軸呈90deg交叉之方向（亦即直交之方向）行進，但 從全反射鏡42之反射光所入射之全反射鏡43則設置為 入射角大於45deg，反射光會在全反射鏡43與入射光之 光軸呈斜向地交叉。 然後，偏光束分割器52係與全反射鏡43呈平行配 置，與偏光束分割器51的穿透光及全反射鏡42的反射 ，呈斜向地交叉之全反射鏡43的反射光會因在偏光束 分割器52之反射而與偏光束分割器51之穿透光的光軸 在相同方向蠻折。 又’圖5(b)係顯示針對偏光束分割器51及全反射 鏡42之組合，亦將入射角設定為大於45(1邛之範例。 又’圖2〜圖4所示之構成中，雷射光L1〜L3的射 出順序為Ε1定，但亦可取代第丨雙色分光鏡31〜第4雙The high-refractive-index optical medium 61 of the moving and optical line of S 22 201219830 can be placed on a rod of, for example, optical glass or a pure (YV〇4) crucible. When the high refractive index optical medium f 61 is provided as described above, it is used. And = the longer 4 of the learning light path - the total reflection mirrors 42, 43 and the Xuanwen refractive index silk medium 61 constitute the path length difference assigned xtn « - 7 Γ. 0 八, as shown in Figure 4, A laser cavity having a yAg rod 71 and a flash lamp 72 is disposed on the optical path 雷 of the laser beam U of the fundamental wavelength (wavelength: 1 〇 64 nm) which is separated by the second dichroic beam splitter 32 (laser vibration) The single 70) 73 'to synchronize the laser cavity 73 with the YAG laser 11' enhances the laser light L1 in the middle of the light path, and finally increases the intensity of the laser light L1 emitted from the fourth dichroic beam splitter 34. Further, by causing the laser light L1 reinforced by the laser cavity 73 to be crystallized by SHG and THG, the laser light LS including the fundamental wave, the second harmonic wave, and the third high-frequency wave is again generated, and the laser light is emitted. The LS is incident on the dichroic beamsplitters 31 to 34, the total reflection mirrors 41 and 44, and the optical beam splitters 51 and 52 and the optical systems constituting the total reflection mirrors 42 and 43 to extend the pulse width in more stages. Further, the high refractive index optical medium 61 may be further provided in the structure including the laser cavity 73. Further, by arranging the attenuator at least one of the light paths of the separated laser beams L1 to L3 after separation, the intensity balance between the laser beams L1 to L3 at the time of final synthesis and emission can be adjusted. 23 201219830 Further, although the above embodiment shows an example in which the laser generating apparatus and the laser generating method of the present invention are used in the laser annealing apparatus 1, the application is not limited to the laser annealing apparatus 1. Further, in the above embodiment, the total reflection mirror, the partial beam splitter, and the two-color spectroscope are configured to bend the laser light by 9 deg, but the bending angle is not limited to 90 deg (the incident angle is 45 deg), for example, FIG. 5 (A) And (B), it may be bent in a direction obliquely intersecting with respect to the optical axis of the incident light. In the example shown in FIG. 5(A), the partial beam splitter 51 and the total reflection mirror 42 are provided as a polarizing surface, and the reflecting surface is inclined by 45 deg with respect to the optical axis of the incident light to make the incident angle 45 deg. The reflected light of the splitter 51 and the reflected light of the total reflection mirror 42 travel in a direction in which the optical axis of the incident light intersects 90deg (that is, an orthogonal direction), but the reflected light from the total reflection mirror 42 is incident. The total reflection mirror 43 is disposed such that the incident angle is greater than 45 deg, and the reflected light intersects obliquely with the optical axis of the incident light at the total reflection mirror 43. Then, the partial beam splitter 52 is disposed in parallel with the total reflection mirror 43, and the reflected light of the total reflection mirror 43 intersecting obliquely with the reflection light of the partial beam splitter 51 and the reflection of the total reflection mirror 42 The optical axis of the light transmitted by the partial beam splitter 52 and the beam splitter 51 is substantially folded in the same direction. Further, Fig. 5(b) shows an example in which the incident angle is set to be larger than 45 for the combination of the partial beam splitter 51 and the total reflection mirror 42. In the configuration shown in Fig. 2 to Fig. 4, The order of emission of the laser light L1 to L3 is Ε1, but it can also replace the second-color dichroic mirror 31~4
S 201219830 色分光鏡34，而例如圖6所示般地，只要在圓盤狀保 持器81之同一圓周上設置有具備反射、穿透之波長相 異的複數雙色分光鏡82a〜82c，而藉由馬達等致動器來 使該圓盤狀保持器81繞著轴周圍旋轉，便可使複數雙 色分光鏡82a〜82c當中的其中之一位在光線路徑上所構 成的分離用波長轉換單元及合成用波長轉換單元，則可 任意地改變雷射光L1〜L3的射出順序。 圖6中，雙色分光鏡82a的特性係只有雷射光L1 會穿透’但雷射光L2、L3會反射，雙色分光鏡82b的 特性係只有雷射光L2會穿透，但雷射光LI、L3會反 射，而雙色分光鏡82c的特性係只有雷射光L3會穿透， 但雷射光LI、L2會反射。 於是，與圖2相同射出順序(L3、L2、L1)的情況， 只要首先以雙色分光鏡82c來分離雷射光LS，而後以 雙色分光鏡82a來將在雙色分光鏡82c反射之雷射光 LI、L2分離成雷射光L1與雷射光L2，之後以雙色分 光鏡82a來合成全反射鏡44的射出光與偏光束分割器 52的射出光’再以雙色分光鏡82c來合成該合成後的雷 射光與偏光束分割器51的射出光即可。 另一方面，例如首先以雙色分光鏡82a來分離雷射 光LS，而後以雙色分光鏡82b來將在雙色分光鏡82a 反射之雷射光L2、L3分離成雷射光L2與雷射光L3， 之後以雙色分光鏡82b來合成全反射鏡44的射出光與 偏光束分割器52的射出光，再以雙色分光鏡82a來合 25 201219830 成該合成後的雷射光與偏光束分割器51的射出光， 雷射光L1〜L3的射出順序便會成為u、u、^ ^ 任意地改變射出順序。 可 此外，使雙色分光鏡82a〜82e當中的其中之 性地位在光線路徑上之機構不限於使上述圓盤持 器81旋轉之機構。 /'付 【圖式簡單說明】 圖1係顯示本發明實施形態之雷射退火裝置之方 塊圖。 圖2係顯示本發明之雷射產生裝置的第1實施形態 之結構圖。 圖3係顯示本發明之雷射產生裝置的第2實施形態 之結構圖。 圖4係顯示本發明之雷射產生裝置的第3實施形態 之結構圖。 圖5係顯示本發明之雷射產生裝置的第4實施形態 之結構圖。 圖6係顯示本發明之雷射產生裝置的第5實施形態 之結構圖。 【主要元件符號說明】 D1〜D3 距離 L1 雷射光(基本波）S 201219830 color dichroic mirror 34, as shown in Fig. 6, for example, as long as the plurality of dichroic beamsplitters 82a to 82c having different wavelengths of reflection and penetration are provided on the same circumference of the disk-shaped holder 81, a separating wavelength conversion unit formed by rotating a disk-shaped holder 81 around a shaft by an actuator such as a motor to position one of the plurality of dichroic beamsplitters 82a to 82c in a light path and The synthesis wavelength conversion unit can arbitrarily change the emission order of the laser light L1 to L3. In Fig. 6, the characteristic of the two-color beam splitter 82a is that only the laser light L1 will penetrate 'but the laser light L2, L3 will reflect, and the characteristic of the two-color beam splitter 82b is that only the laser light L2 will penetrate, but the laser light LI, L3 will The reflection, while the characteristic of the dichroic beam splitter 82c is that only the laser light L3 will penetrate, but the laser light L1, L2 will reflect. Therefore, in the case of the same emission order (L3, L2, L1) as in Fig. 2, the laser beam LS is first separated by the dichroic beam splitter 82c, and then the laser beam L1 reflected by the dichroic beam splitter 82c is reflected by the dichroic beam splitter 82a. L2 is separated into laser light L1 and laser light L2, and then the light emitted from the total reflection mirror 44 and the light emitted from the polarization beam splitter 52 are synthesized by the dichroic beam splitter 82a. The synthesized laser light is synthesized by the dichroic beam splitter 82c. The light emitted from the partial beam splitter 51 may be used. On the other hand, for example, the laser light LS is first separated by the dichroic beam splitter 82a, and then the laser light L2 and L3 reflected by the dichroic beam splitter 82a are separated into the laser light L2 and the laser light L3 by the dichroic beam splitter 82b, and then the two colors are separated. The beam splitter 82b combines the light emitted from the total reflection mirror 44 and the light emitted from the partial beam splitter 52, and combines the two-color beam splitter 82a with the two-color beam splitter 82a to form the combined laser light and the beam splitter 51. The order of emission of the light beams L1 to L3 is u, u, ^^, and the order of emission is arbitrarily changed. Further, the mechanism for causing the two of the dichroic beamsplitters 82a to 82e to be positioned on the light path is not limited to the mechanism for rotating the disk holder 81. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a block diagram showing a laser annealing apparatus according to an embodiment of the present invention. Fig. 2 is a view showing the configuration of a first embodiment of the laser generating apparatus of the present invention. Fig. 3 is a view showing the configuration of a second embodiment of the laser generating apparatus of the present invention. Fig. 4 is a view showing the configuration of a third embodiment of the laser generating apparatus of the present invention. Fig. 5 is a view showing the configuration of a fourth embodiment of the laser generating apparatus of the present invention. Fig. 6 is a view showing the configuration of a fifth embodiment of the laser generating apparatus of the present invention. [Main component symbol description] D1 to D3 distance L1 laser light (basic wave)
S 26 L2 雷射光（第2高頻波） L3 雷射光（第3向頻波） L1P〜L3P P偏光成分 L1S〜L3S S偏光成分 LS 雷射光 1 雷射退火裝置 2 基板 3 雷射光 4 雷射產生裝置 5 光束調整光學系統 6 基板載置台 11 YAG雷射 12 SHG結晶 13 THG結晶 14 脈衝寬度延長器 31 〜34 第1〜第4雙色分光鏡 41 第1全反射鏡 42、42(L1)〜42(L3) 第2全反射鏡 43、43(L1)〜43(L3) 第3全反射鏡 44 第4全反射鏡 51 分離用偏光束分割器（分離用偏光轉換單 201219830 51(L1)〜51(L3) 第1偏光束分割器 52 合成用偏光束分割器（合成用偏光轉換單 27 201219830 52(L1)〜52(L3) 第2偏光束分割器 61 高折射率光學媒質 71 YAG 棒 72 閃光燈 73 雷射腔 81 圓盤狀保持器 82a〜82c 雙色分光鏡S 26 L2 Laser light (2nd high frequency wave) L3 Laser light (3rd direction wave) L1P~L3P P Polarized component L1S~L3S S Polarized component LS Laser light 1 Laser annealing device 2 Substrate 3 Laser light 4 Laser generating device 5 Beam adjustment optical system 6 Substrate mounting table 11 YAG laser 12 SHG crystal 13 THG crystal 14 Pulse width extender 31 to 34 First to fourth dichroic beamsplitter 41 First total reflection mirror 42, 42 (L1) to 42 ( L3) second total reflection mirrors 43, 43 (L1) to 43 (L3) third total reflection mirror 44 fourth total reflection mirror 51 separation beam splitter (separation polarization conversion single 201219830 51 (L1) to 51 ( L3) First partial beam splitter 52 Synthetic partial beam splitter (synthesis polarization conversion unit 27 201219830 52 (L1) to 52 (L3) Second beam splitter 61 High refractive index optical medium 71 YAG rod 72 Flash 73 Laser cavity 81 disk-shaped holder 82a~82c two-color beam splitter
S 28S 28