TW201219382A - Method for producing condensed ring compound and material compound used in this method - Google Patents

Method for producing condensed ring compound and material compound used in this method Download PDF

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TW201219382A
TW201219382A TW100124731A TW100124731A TW201219382A TW 201219382 A TW201219382 A TW 201219382A TW 100124731 A TW100124731 A TW 100124731A TW 100124731 A TW100124731 A TW 100124731A TW 201219382 A TW201219382 A TW 201219382A
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group
formula
compound represented
ring
independently represents
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TW100124731A
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Chinese (zh)
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Hiroki Terai
Tomoya Kashiki
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Sumitomo Chemical Co
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    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D495/00Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/12Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains three hetero rings
    • C07D495/14Ortho-condensed systems

Abstract

Provided is a method for producing a dithienothiophene derivative with high yield. This method comprises the following step: reacting a compound represented by formula (1) and a compound represented by formula (2), in the presence of a transition metal complex, to produce a compound represented by formula (3). [ring A and ring B represent aromatic ring, X<SP>1</SP> and X<SP>2</SP> represent halogen atom, etc.] M<SP>1</SP>M<SP>2</SP>Y(Z)m (2)[wherein, Y represents element of group 15 or 16, M<SP>1</SP> and M<SP>2</SP> represent alkali metal, etc., Z represents hydrogen atom, etc., m represents 1 or 2.] [ring A, ring B, Y, Z and m represent the same meaning as the above mentioned.].

Description

201219382 六、發明說明: 【發明所屬之技術領域】 本發明係關於縮環化合物之製造方法,以及在該方法 中所使用之原料化合物。 【先前技術】 檢討作為有機半導體材料之二噻吩並噻吩 (dithienothiophene)衍生物。 製造二。塞吩並嗟吩衍生物之方法,係提出由以下兩步 驟所成之方法(非專利文獻1):將3, 3’ -二溴-2, 2’ -聯噻吩 (3, 3’ -dibromo-2, 2’ -bithiophene)衍生物二裡(dilithio) 化之第1步驟;以及將第1步驟生成之生成物與雙(苯磺醯 基)硫醚(bis(phenyl sulfonyl)sulfide)反應之第 2 步驟。 [先前技術文獻] [非專利文獻] [非專利文獻 l]Advanced Materials, 2007,vol. 19, 3008. 【發明内容】 (發明欲解決之課題) 然而,藉由過去技術之二噻吩並噻吩衍生物之製造方 法,有二售吩並嗟吩衍生物收率過低的問題。 因此,本發明的目的係提供一種高收率之製造方法, 係製造作為代表例之二噻吩並噻吩衍生物之縮合環化合 物。 (解決課題之方法) 4 323286 201219382 . 亦即,本發明*供—種式(3)絲^:之化合物的製造方 * 法’係包含下述反應步驟: .於過渡金屬錯合物存在下,使式⑴所表示之化合物與 式(2)所表示之化合物反應。201219382 VI. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a method for producing a condensed ring compound, and a raw material compound used in the method. [Prior Art] A dithienothiophene derivative as an organic semiconductor material was reviewed. Manufacturing two. The method of the phenanthrene derivative is proposed by the following two steps (Non-Patent Document 1): 3,3'-dibromo-2, 2'-bithiophene (3, 3'-dibromo) -2, 2'-bithiophene) derivative 1 step of dilithiolation; and reacting the product formed in the first step with bis(phenyl sulfonyl) sulfide (bis(phenyl sulfonyl)sulfide) Step 2. [Prior Art Document] [Non-Patent Document] [Non-Patent Document 1] Advanced Materials, 2007, vol. 19, 3008. [Summary of the Invention] (The subject of the invention is to be solved) However, it is derived from the thienothiophene of the prior art. There is a problem in that the yield of the phenanthrene derivative is too low. Accordingly, an object of the present invention is to provide a high-yield production method for producing a condensed cyclic compound of a dithienothiophene derivative as a representative example. (Method for Solving the Problem) 4 323286 201219382 . That is, the present invention * provides a method for producing a compound of the formula (3): the method comprises the following reaction steps: in the presence of a transition metal complex The compound represented by the formula (1) is allowed to react with the compound represented by the formula (2).

(式中,A環及B環各自獨立表示芳香族環。γ表示第15 =二素或第16族元素。Ζ各自獨立表示氫原子、烷基、芳 ^或雜芳基。m表示G或by為第15族元素時,瓜為1; 為第16族元素時,m為〇。) X1 X2 (1) (式中’ A環及B環係與前述相同意義。X1及X2各自獨立表 不4素原子、烧基續酸酯基(aikyi sulfonate group)或芳 基磺酸酯基。) M、V)m (2) (式中’ Μ1表示鹼金屬原子或鹵化鎂基。Μ2表示鹼金屬原 子、鹵化鎂基或氫原子。Υ、Ζ及m係與前述相同意義。) 此外,本發明提供一種式(3)所表示之化合物的製造方 法’係包含下述反應步驟: 於過渡金屬錯合物存在下,使式(4)所表示之化合物進 5 323286 201219382 行分子内環化反應(intramolecular cyclization reaction) 〇(wherein the A ring and the B ring each independently represent an aromatic ring. γ represents a 15th = a di- or a group 16 element. The oxime each independently represents a hydrogen atom, an alkyl group, an aryl group or a heteroaryl group. m represents G or When by is a group 15 element, the melon is 1; when it is a group 16 element, m is 〇.) X1 X2 (1) (wherein the A ring and the B ring system have the same meaning as described above. X1 and X2 are independent tables respectively. Not a 4-atom atom, an aikyi sulfonate group or an aryl sulfonate group.) M, V) m (2) (wherein Μ1 represents an alkali metal atom or a magnesium halide group. Μ2 represents a base A metal atom, a magnesium halide group or a hydrogen atom. The ruthenium, osmium and m groups have the same meanings as described above.) Further, the present invention provides a process for producing a compound represented by the formula (3), which comprises the following reaction steps: In the presence of a complex, the compound represented by the formula (4) is subjected to an intramolecular cyclization reaction of 5 323286 201219382.

(式中,A環及β環各自獨立表示芳香族環。γ表示第15 族元素或第16族元素。Ζ各自獨立表示氫原子、烷基、芳 基或雜芳基。m表示〇或ΐ〇γ為第15族元素時,111為j, Y為第16族元素時,m為〇。)(wherein the A ring and the β ring each independently represent an aromatic ring. γ represents a Group 15 element or a Group 16 element. The oxime each independently represents a hydrogen atom, an alkyl group, an aryl group or a heteroaryl group. m represents ruthenium or osmium. When 〇γ is a group 15 element, 111 is j, and Y is a group 16 element, and m is 〇.)

(4) (式中,M3表示典型金屬原子或齒化鎮基。χ2表示函素原 子、烧基續酸酯基或芳基績酸醋基。Α環、Β環、γ、ζ及瓜 係與前述相同意義^ ) 此外,本發明提供式一種(4)所表示之化合物。 (Z)m ΥΜ3 γ2(4) (wherein M3 represents a typical metal atom or a toothed singular group. χ2 represents a functional element atom, a decyl acrylate group or an aryl acid vine group. Anthracene ring, anthracene ring, γ, hydrazine and melon The same meaning as the above ^) Further, the present invention provides a compound represented by the formula (4). (Z)m ΥΜ3 γ2

(4) (式中,Μ表不典型金屬原子或鹵化鎂基。Λ環及β環各自 蜀立表示芳香族環。X2表示齒素原子、烷基磺酸酯基或芳 6 323286 201219382 基磺酸酯基。Y表示第15族元素或第16族元素。Z表示氫 原子、烷基、芳基或雜芳基。m表示〇或1»Y為第15族 70素時,m為1,Υ為第16族元素時,m為0。) 此外’本發明提供一種式(5)所表示之化合物。 (?)m(4) (In the formula, Μ represents an atypical metal atom or a magnesium halide group. The anthracene ring and the β ring each represent an aromatic ring. X2 represents a dentate atom, an alkyl sulfonate group or an aromatic 6 323286 201219382 Acid ester group. Y represents a Group 15 element or a Group 16 element. Z represents a hydrogen atom, an alkyl group, an aryl group or a heteroaryl group. m represents 〇 or 1»Y is a Group 15 70 molecule, m is 1, When Υ is a Group 16 element, m is 0.) Further, the present invention provides a compound represented by the formula (5). (?)m

(式中,A環及B環各自獨立表示芳香族環。χ2表示鹵素原 子、烷基磺酸酯基或芳基磺酸酯基。Υ表示第15族元素或 第16無το素。Ζ各自獨立表示氫原子、烧基、芳基或雜芳 基。m表示〇或卜γ為第15族元素時,4 i,γ為第μ 族元素時,m為〇。) (發明之效果) 根據本發明可高收率地製造作為代表例之二嗟吩並嗟 吩衍生物之縮合環化合物。 【實施方式】 以下說明本發明之實施型態。 &lt;本發明之第1製造方法&gt; f造丄製造方法係前述式(3)所表示化合物之 其包含以下步驟:在過渡金屬錯合物存在下, =式⑴絲^化合㈣前料⑵所麵之化合物 &lt;式(1)所表示之化合物&gt; 323286 7 201219382 前述式(1)中,A環及B環各自獨立表示芳香族環。該 芳香族環可具有取代基。該芳香族環的碳數較佳為2至 60,更佳為2至22,又更佳為3至14。該碳數中不包括芳 香族環所具有取代基之碳數。該芳香族環可列舉:笨環、 萘環、蒽環、菲環、稠四苯(tetracene)環、芘環、茈環、 第環、曙二〇坐(oxadiazol)環、0塞二唑(thiadiazole)環、 口等0圭環、嗟吩環、α比p各環、吱味環、°比咬(pyradine)、〇比 啡(pyrazine)環、癌咬(pyrimidine)環、三哄(triazine) 環、苯並售吩(benzothiophene)環、苯並°比0各環、苯並咬 喃環、喹淋環、異喹淋環、噻吩並[3, 2-b]噻吩環、嗔吩並 [2, 3-b]噻吩環、二噻吩並[3, 2-b:2’,3’ -d]噻吩環等。 前述A環及B環係可隔著環而形成多環構造。此等化 合物之例子如後述式(1-2)之化合物及式(1-34)之化合物。 前述A環及B環各自獨立,且較佳為芳香族五員雜環。 於該五員雜環亦可縮合有其他環。 前述式(1)中,X1及X2所表示之鹵素原子可列舉:氟 原子、氣原子、溴原子、碘原子。 前述式(1)中,X1及X2所表示之烧基續酸酯基可列舉: 曱確酸酯基(methanesulfonate)、三氟甲確酸酯基等。 前述式(1)中,X1及X2所表示之芳基磺酸酯基可列舉: 本續酸醋基、對-甲苯續酸酉旨基(para-toluenesulfonate) 等。 前述式(1)中’由反應收率的觀點來看,X1及X2較佳 為氣原子、溴原子、碘原子,更佳為溴原子、碘原子。 8 323286 201219382 則述式(1)所表示之化合物較佳樣態係式(丨A)所表示 之化合物、式(1B)所表示之化合物。(In the formula, the A ring and the B ring each independently represent an aromatic ring. χ 2 represents a halogen atom, an alkyl sulfonate group or an aryl sulfonate group. Υ represents a Group 15 element or a 16th no τ 素. Independently represents a hydrogen atom, a pyridyl group, an aryl group or a heteroaryl group. m represents 〇 or γ is a group 15 element, and 4 i, γ is a group μ element, m is 〇.) (Effect of the invention) The present invention can produce a condensed ring compound of a dinonphene porphin derivative as a representative example in a high yield. [Embodiment] Hereinafter, embodiments of the present invention will be described. &lt;First Manufacturing Method of the Invention&gt; The f manufacturing method is a compound represented by the above formula (3), which comprises the following steps: in the presence of a transition metal complex, = (1) silk compound (four) pre-material (2) Compounds &lt;Compounds represented by formula (1)&gt; 323286 7 201219382 In the above formula (1), the A ring and the B ring each independently represent an aromatic ring. The aromatic ring may have a substituent. The aromatic ring preferably has a carbon number of from 2 to 60, more preferably from 2 to 22, still more preferably from 3 to 14. The carbon number of the substituent having an aromatic ring is not included in the carbon number. Examples of the aromatic ring include a stupid ring, a naphthalene ring, an anthracene ring, a phenanthrene ring, a tetracene ring, an anthracene ring, an anthracene ring, a ring, an oxadiazol ring, and a oxodiazole ( Thiadidiazole ring, mouth, etc. 0 guole ring, porphin ring, α ratio p ring, astringent ring, pyrabit, pyrazine ring, pyrimidine ring, triazine Cyclothiophene ring, benzothiophene ring, benzopyrene ring, benzoheptane ring, quinolone ring, isoquinol ring, thieno[3,2-b]thiophene ring, porphin [2, 3-b] thiophene ring, dithieno[3,2-b:2',3'-d]thiophene ring and the like. The A ring and the B ring system may form a multi-ring structure via a ring. Examples of such compounds are the compounds of the formula (1-2) and the compounds of the formula (1-34) described below. The aforementioned A ring and B ring are each independently, and are preferably an aromatic five-membered heterocyclic ring. The five-membered heterocyclic ring may also be condensed with other rings. In the above formula (1), examples of the halogen atom represented by X1 and X2 include a fluorine atom, a gas atom, a bromine atom, and an iodine atom. In the above formula (1), the alkyl sulfonate group represented by X1 and X2 may, for example, be a methanesulfonate or a trifluoromethane ester group. In the above formula (1), the arylsulfonate group represented by X1 and X2 may, for example, be a sulfonate group or a para-toluene sulfonate. In the above formula (1), from the viewpoint of the reaction yield, X1 and X2 are preferably a gas atom, a bromine atom or an iodine atom, more preferably a bromine atom or an iodine atom. 8 323286 201219382 The compound represented by the formula (1) is preferably a compound represented by the formula (A) and a compound represented by the formula (1B).

式(1A)中,R各自獨立表示烧基、院氧基、烧硫基、 芳基、芳氧基、芳硫基、烯基、炔基、胺基、取代胺基、 矽基、取代矽基、鹵素原子、醯基、醯氧基、醯胺基、雜 芳基、羧基、取代羧基、硝基或氰基。 η表示0至2之整數。兩個n可相同或相異。Ri為複 數,時,其彼此可相同或相異。“ 2時,不拘於Ri前述 之疋義,相鄰接之R1可相互鍵結,而與各別之^鍵結之碳 原子共同形成餘構造。E各自獨立表示_Q_、令、备 或N(R )-。R各自獨立表示烷基、芳基、雜芳基。兩個e 可相同或相異。Χ1及X2係與前述相同意義。 該環狀構匕係相當於飽和或不飽和之單環式或多環式 之坡%或轉。其例子可麟··苯環、㈣環、嘆吩環、 比咯環、萘環、噻吩並噻吩環、笨並噻吩環、環戊烷環、 環己烷環等。In the formula (1A), R each independently represents an alkyl group, an alkoxy group, a thiol group, an aryl group, an aryloxy group, an arylthio group, an alkenyl group, an alkynyl group, an amine group, a substituted amine group, a fluorenyl group, a substituted hydrazine. a group, a halogen atom, a fluorenyl group, a decyloxy group, a decylamino group, a heteroaryl group, a carboxyl group, a substituted carboxy group, a nitro group or a cyano group. η represents an integer of 0 to 2. The two n's may be the same or different. When Ri is a plural, it may be the same or different from each other. "At 2 o'clock, regardless of the aforementioned meaning of Ri, the adjacent R1 may be bonded to each other, and together with the carbon atoms of the respective bonds, form a residual structure. E each independently represents _Q_, 令, 备, or N (R)-.R each independently represents an alkyl group, an aryl group or a heteroaryl group. The two e's may be the same or different. The oxime 1 and the X2 are the same as defined above. The cyclic structure is equivalent to saturated or unsaturated. Monocyclic or polycyclic slope % or rotation. Examples thereof include a benzene ring, a (tetra) ring, an epoch ring, a pyrrole ring, a naphthalene ring, a thienothiophene ring, a stupid thiophene ring, a cyclopentane ring. , cyclohexane ring, and the like.

式(1Β)中,ρ表示〇至4之整數。兩個ρ可相同或相 異。R2各自獨立表示烷基、烷氧基、烷硫基、芳基、芳氧 9 323286 201219382 基、芳硫基、稀基、快基、胺基、取代胺基、碎基、取代 石夕基、函素原子、醯基、醯氧基、醢胺基、雜芳基、叛基、 取代羧基、硝基或氰基。R2為複數個時,其彼此可相同或 相異。苯環中鄰接之碳原子分別具有R2所表示的基時,不 拘於R2前述之定義,鄰接之碳原子所具有之R2可相互鍵 結,而與鄰接之前述碳原子共同形成環狀構造。E各自獨 立表不_0_、_S-、_Se_或_N(R3)_。R3各自獨立表不烧基、 芳基、雜芳基。兩個E可相同或相異。X1及X2係與前述相 同意義。 該環狀構造係相當於飽和或不飽和之單環式或多環式 烴環或雜環。其例子可列舉:苯環、σ夫喃環、嗟吩環、11比 咯環、萘環、噻吩並噻吩環、苯並噻吩環、環戊烷環、環 己烷環等。 在此,烷基所具有的碳數通常為1至60,較佳為1至 20。烷基可列舉:曱基、乙基、正丙基、正丁基、戊基、 己基、庚基、辛基、壬基、癸基、十一烧基、十二烧基、 十四烧基、十六院基、十八烧基、二十烧基、三氟曱基、 全氟己基、全氟辛基等。 烷氧基所具有的碳數通常為1至60,較佳為1至20。 烷氧基可列舉:曱氧基、乙氧基、正丙氧基、正丁氧基、 戊氧基、己氧基、庚氧基、辛氧基、壬氧基、癸氧基、十 二烷氧基、三氟曱氧基、全氟己氧基、全氟辛氧基、甲氧 基曱基氧基、2-乙氧基乙基氧基等。 烷硫基的碳數通常為1至60,較佳為1至20。烷硫基 10 323286 .201219382 可列舉.丁硫基、己硫基、辛硫基、十二烷硫基等。 芳基係由芳香族烴除去一個與環碳原子鍵結的氫原子 之原子團,其包括具有苯環的基、具有縮合環的基。芳基 可具有取代基,取代基除外之芳基的碳數通常為6至6〇 , 較佳為6至20。芳基可列舉:苯基、卜萘基、2_萘基、卜 蒽基、2-蒽基、9-蒽基、卜稠四苯基(1_tetracenyl)、2_ 稠四笨基、5-稠四苯基、卜芘基、2_芘基、4_芘基、2_茈 基、3-茈基、2-g基、3-g基、4-薙基、1-伸聯苯基 U-biPhenyienyi)、2-伸聯苯基、2_ 菲基(2_phenanthryl)、 9-菲基等。 方氧基可具有取代基,取代基除外之芳氧基的碳數通 :為6至6G ’較佳為6至20。芳氧基可列舉:苯氧基、卜 萘氧基、2-萘氧基、五氟苯氧基等。 ^芳硫基可具有取代基,取代絲狀料基的碳數通 ㊉為6至60 ’較佳為6至2〇。芳硫基可列舉:苯硫基、卜 萘硫基、2-萘硫基、五氟苯硫基等。 取代基除外之烯基的碳數通常為 。烯基可列舉··乙烯、卜辛烯基、 烯基可具有取代基, 2至60,較佳為2至2〇 2-笨乙烯基等。 =基可㈣取魁,減紐外之料㈣數通常為 2至+60,較佳為2至2〇。块基可列舉··乙块基小辛块其、 2-苯乙炔基、三尹基矽基乙炔基等。 、土 „的碳數通常為】至6〇’較佳為⑴ 風基可列舉1基胺基、二^基胺基、乙基胺基、二乙基 323286 11 201219382 胺基、二丙基胺基、苯基胺基、二苯基胺基、 甲基笨基矽 2-萘基胺基、五氟笨基胺基&quot;㈣基胺料。’基鞍基、 取代矽基的碳數通常為丨至6〇,較佳 石夕基可列舉:三甲基石夕基、三乙基石夕基、:3,。取代 苯基石夕基、4齡基、二笨基甲絲基Γ基發基、 基等。 鹵素原子可列舉:氟原子、氣原子、溴原 醯基的碳數通常為2至20。醯基可列舉峨原子。 酿基二基,、三氣乙醢基、五氣节:二基、, 酿氧基的碳數通常為2至20。醯氧基可列舉. 基、丙醯氧基、τ轉基、㈣氧基、三氟酿氧 氟苄醯氧基等。 ώ乳基、五 酿胺基的石反數通常為2至2〇。醯胺基可兴 基、乙酿胺基、丙醯胺基、丁醯胺基、节醯胺基酿胺 酿胺基、域醯胺基 '三⑽胺基、= 醯胺基等。 一卞 雜芳基可具有取代基,取代基除狀料基的碳數通 常為3至60 ’較佳為3至2〇。雜芳基可列舉 3— 料基Ή吩基、Μ吩基、2_鱗基、3_^南基基、 2-噚唑基、2-噻唑基、2-咪唑基、2-吡啶基、3_吡啶基、 4- 吡啶基、2-苯並呋喃基、2-苯並噻吩基、2_噻吩並噻吩 基等。 取代羧酸基的碳數通常為2至20。取代羧酸基可列 舉:羧酸曱醋基、幾酸乙醋基、缓酸苯g旨基等。 12 323286 201219382 前述式(1A)中,E各自獨立,較佳為-0-、-S-、-Se-, 更佳為-S-。 式(1B)中,E各自獨立,較佳為-0-、-S---Se-,更 佳為-S-。 前述式(1)所表示化合物,例如可列舉以下化合物。In the formula (1Β), ρ represents an integer from 〇 to 4. The two ρ can be the same or different. R2 each independently represents alkyl, alkoxy, alkylthio, aryl, aryloxy 9 323286 201219382, arylthio, dilute, fast radical, amine, substituted amine, fragment, substituted a functional atom, a fluorenyl group, a decyloxy group, a decylamino group, a heteroaryl group, a thiol group, a substituted carboxy group, a nitro group or a cyano group. When R2 is plural, they may be the same or different from each other. When the carbon atoms adjacent to each other in the benzene ring have a group represented by R2, R2 of the adjacent carbon atoms may be bonded to each other without forming the ring structure, and the adjacent carbon atoms may form a ring structure. E each independently represents _0_, _S-, _Se_ or _N(R3)_. R3 each independently represents a non-alkyl group, an aryl group, and a heteroaryl group. The two Es can be the same or different. X1 and X2 have the same meaning as described above. The cyclic structure corresponds to a saturated or unsaturated monocyclic or polycyclic hydrocarbon ring or heterocyclic ring. Examples thereof include a benzene ring, a sigma ring, a porphin ring, an 11-pyrrole ring, a naphthalene ring, a thienothiophene ring, a benzothiophene ring, a cyclopentane ring, a cyclohexane ring and the like. Here, the alkyl group has a carbon number of usually from 1 to 60, preferably from 1 to 20. The alkyl group may, for example, be an alkyl group, an ethyl group, a n-propyl group, a n-butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a decyl group, a decyl group, an undecyl group, a dodecanyl group or a tetradecyl group. , 16 yards, octadecyl, decyl, trifluoromethyl, perfluorohexyl, perfluorooctyl and so on. The alkoxy group has a carbon number of usually from 1 to 60, preferably from 1 to 20. The alkoxy group may, for example, be an methoxy group, an ethoxy group, a n-propoxy group, a n-butoxy group, a pentyloxy group, a hexyloxy group, a heptyloxy group, an octyloxy group, a decyloxy group, a decyloxy group, or twelve. Alkoxy, trifluoromethoxy, perfluorohexyloxy, perfluorooctyloxy, methoxydecyloxy, 2-ethoxyethyloxy, and the like. The alkylthio group has a carbon number of usually 1 to 60, preferably 1 to 20. The alkylthio group 10 323286 .201219382 may, for example, be a butylthio group, a hexylthio group, an octylthio group or a dodecylthio group. The aryl group is an atomic group which removes a hydrogen atom bonded to a ring carbon atom from an aromatic hydrocarbon, and includes a group having a benzene ring and a group having a condensed ring. The aryl group may have a substituent, and the aryl group other than the substituent has a carbon number of usually 6 to 6 Å, preferably 6 to 20. Examples of the aryl group include a phenyl group, a naphthyl group, a 2-naphthyl group, a diterpene group, a 2-fluorenyl group, a 9-fluorenyl group, a 4-tetracenyl group, a 2-fold fused tetraphenyl group, a 5-fused tetraphenyl group, and a diphenyl group. , 2_fluorenyl, 4_fluorenyl, 2_mercapto, 3-indenyl, 2-gyl, 3-gyl, 4-indenyl, 1-extended biphenyl U-biPhenyienyi), 2-stretch Biphenyl, 2_phenanthryl, 9-phenanthryl and the like. The aryloxy group may have a substituent, and the carbon number of the aryloxy group other than the substituent is from 6 to 6 G ', preferably from 6 to 20. The aryloxy group may, for example, be a phenoxy group, a naphthyloxy group, a 2-naphthyloxy group or a pentafluorophenoxy group. The arylthio group may have a substituent, and the carbon number of the substituted filamentary base is from 6 to 60 Å, preferably from 6 to 2 Å. Examples of the arylthio group include a phenylthio group, a naphthylthio group, a 2-naphthylthio group, a pentafluorophenylthio group and the like. The number of carbon atoms of the alkenyl group other than the substituent is usually . The alkenyl group may be an ethylene group, a octenyl group, or an alkenyl group which may have a substituent, and is 2 to 60, preferably 2 to 2 fluorene 2-stene vinyl group or the like. = base can be (four) take the lead, minus the material outside the new (four) is usually 2 to +60, preferably 2 to 2 〇. Examples of the block group include an ethyl bromide group, a 2-phenylethynyl group, a tri-indenyl ethynyl group, and the like. The carbon number of the soil is usually from 〇 to 6〇'. (1) The group of the wind can be exemplified by a 1 group amino group, a dimethylamino group, an ethylamino group, a diethyl 323286 11 201219382 amine group, dipropylamine a group, a phenylamino group, a diphenylamino group, a methyl phenyl 2-naphthylamino group, a pentafluorophenylamino group, and a tetraamine-based amine. The carbon number of the base group and the substituted fluorenyl group is usually For the 丨 〇 〇 〇 〇 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳Examples of the halogen atom include a fluorine atom, a gas atom, and a sulfonium sulfonium group, and the carbon number is usually 2 to 20. The fluorenyl group may be a fluorene atom. The aryl group, the triethylene ethane group, and the five gas group: The carbon number of the diyl group and the ethoxy group is usually 2 to 20. The decyloxy group may be exemplified by a group, a propenyloxy group, a taurotyl group, a (tetra)oxy group, a trifluoropyroxyfluorobenzyloxy group, or the like. The inverse number of the base and the saponin is usually 2 to 2 〇. 醯 可 可 、, 乙 胺 胺 胺 胺 胺 胺 胺 胺 胺 胺 胺 胺Amidino-tris(10)amino group, = guanylamino group, etc. The one heteroaryl group may have a substituent, and the carbon number of the substituent group is usually from 3 to 60', preferably from 3 to 2%. The heteroaryl group may be a 3-carbenyl group, an anthranyl group, 2_ squara, 3_^nanyl, 2-oxazolyl, 2-thiazolyl, 2-imidazolyl, 2-pyridyl, 3-pyridyl, 4-pyridyl, 2-benzofuranyl, 2 -benzothiophenyl, 2-thienothiophenyl, etc. The carbon number of the substituted carboxylic acid group is usually from 2 to 20. The substituted carboxylic acid group may be exemplified by a carboxylic acid hydrazine vine group, a certain acid ethyl acetonate group, and a slow acid benzene group. 12 323286 201219382 In the above formula (1A), E is independent, preferably -0-, -S-, -Se-, more preferably -S-. In the formula (1B), E is independent, It is preferably -0-, -S---Se-, more preferably -S-. Examples of the compound represented by the above formula (1) include the following compounds.

(1-5)(1-5)

Br BrBr Br

(1-18) (1-19) 13 323286 201219382(1-18) (1-19) 13 323286 201219382

0·20) (1-21) (1.22)0·20) (1-21) (1.22)

Br BrBr Br

(1-31)(1-31)

(1'32)(1'32)

(1-36) 式(1-1)至式(1-37)之化合物中,較佳為式(1_8)至式 (1-21)、式(1-24)至式(1-26)、式(1-31)至(1-33)、式(1_&quot;36) 之化合物,更佳為式(1-11)至式〇_20)、式(丨—24)、式 (1-32)、式(1-33)、式(1-36)之化合物,又更佳為式(1 — 至式(1_20)之化合物。 323286 14 201219382 &lt;式(2)所表示之化合物&gt; • 前述式(2)中,M1所表示之鹼金屬原子可列舉:鋰原 ‘ 子、納原子、钟原子等。 前述式(2)中,M1所表示之齒化鎂基可列舉:氯化鎂 基、溴化鎂基、碘化鎂基等。 前述式(2)中,M2所表示之鹼金屬原子可列舉:鋰原 子、納原子、奸原子等。 前述式(2)中,M2所表示之函化鎂基可列舉:氯化鎂 基、漠化鎂基、峨化鎮基等。 M2之中較佳為驗金屬原子、鹵化鎮基。 從原料容易取得及原料容易調製之觀點來看,M1及M2 較佳為相同。 前述式(2)中,Y所表示之第15族元素可列舉:氮、 頌^ 、石申。 前述式(2)中,Y所表示之第16族元素可列舉:氧、 硫、石西。 Y較佳為第16族元素,更佳為硫。 前述式(2)中,Z所表示之院基、芳基、雜芳基的定義、 具體例係與前述式(1A)中R1所表示之烷基、芳基、雜芳基 的定義、具體例相同。 前述式(2)中,m表示0或1。丫為第15族元素時,m 為1 ; Y為第16族元素時,m為0。 前述式(2)所表示之化合物可為無水物或水合物。例如 硫化納五水合物、硫化納九水合物亦包括在式(2)所表示化 15 323286 201219382 合物内。 本發明之製造方法中,相對於前述式(1)所表示化合物 1莫耳,前述式(2)所表示化合物之使用量為1莫耳以上, 較佳為1至100莫耳,更佳為1至10莫耳。相對於式(1) 所表示化合物1莫耳,若式(2)所表示化合物之使用量為1 莫耳以下,則用以形成縮合環之Y的量不足,而有縮合環 化物收率降低的情形。 前述式(2)所表示化合物例如可列舉以下化合物。 ϋ2Ρ~0 LiaAs— (2-1) (2-2) (2-3) Na20 Na2S Na2S· 5H20 Na2S*9H20 (24) (2-5) (2-6) (2-7) Li2Se Na2Se Na2Se· 5 HjO Na2Se- 9 H2〇 (2-8) (2-9). (2-10) (2-11) NaOH NaSH NaSeH LiSeH (2-12) (2-13) (2-14) (2-15) 〇(MgCI)2 〇(MgBr)2 S(MgBr)2 Se(MgBr&gt;2 (2-16) (2-17) (2-18) (2-19) 式(2-1)至式(2-19)之化合物中,較佳為式(2-1)至式 (2-11)之化合物,更佳為式(2-4)至式(2-11)之化合物,又 更佳為式(2-5)至式(2-7)之化合物。 &lt;式(3)所表示之化合物&gt; 前述式(3)中,A環、B環、Y、Z、m係與前述式(1)之 A環、B環、Y、Z、m相同意義。 16 323286 201219382 式(3A)所表示化合物可藉由在過渡金屬存在下,使前 * 述式(1A)所表示之化合物與前述式(2)所表示之化合物反 ^ 應而製造。(1-36) Among the compounds of the formula (1-1) to the formula (1-37), preferred are the formula (1-8) to the formula (1-21), the formula (1-24) to the formula (1-26) a compound of the formula (1-31) to (1-33), a formula (1_&quot; 36), more preferably a formula (1-11) to a formula 〇20), a formula (丨24), a formula (1- 32), a compound of the formula (1-33), the formula (1-36), more preferably a compound of the formula (1 - to the formula (1-20). 323286 14 201219382 &lt;a compound represented by the formula (2)&gt; In the above formula (2), examples of the alkali metal atom represented by M1 include a lithium genus, a nano atom, a clock atom, and the like. In the above formula (2), a magnesium chloride group represented by M1 may be exemplified by a magnesium chloride group. In the above formula (2), the alkali metal atom represented by M2 may, for example, be a lithium atom, a nano atom, or a trait atom. In the above formula (2), M2 represents The functional magnesium group can be exemplified by magnesium chloride group, desert magnesium base, bismuth base group, etc. M2 is preferably a metal atom and a halogenated town base. From the viewpoint of easy availability of raw materials and easy preparation of raw materials, M1 and M2 is preferably the same. In the above formula (2), the 15th element represented by Y In the above formula (2), the group 16 element represented by Y may be, for example, oxygen, sulfur or lithene. Y is preferably a group 16 element, more preferably sulfur. In the above formula (2), the definition of the nodal group, the aryl group, and the heteroaryl group represented by Z, and the specific examples are the definitions and specific examples of the alkyl group, the aryl group, and the heteroaryl group represented by R1 in the above formula (1A). In the above formula (2), m represents 0 or 1. When 丫 is a group 15 element, m is 1; when Y is a group 16 element, m is 0. The compound represented by the above formula (2) may be An anhydrate or a hydrate. For example, sodium sulphide sulphate and sodium sulphide sulphide are also included in the compound represented by formula (2): 15 323286 201219382. In the production method of the present invention, relative to the above formula (1) The compound represented by the above formula (2) is used in an amount of 1 mol or more, preferably 1 to 100 mol, more preferably 1 to 10 mol, relative to the compound represented by the formula (1). When the compound represented by the formula (2) is used in an amount of 1 mol or less, the amount of Y used to form the condensed ring is insufficient, and the condensed cyclized product is obtained. The compound represented by the above formula (2) is exemplified by the following compounds: ϋ2Ρ~0 LiaAs—(2-1) (2-2) (2-3) Na20 Na2S Na2S· 5H20 Na2S*9H20 (24) ( 2-5) (2-6) (2-7) Li2Se Na2Se Na2Se· 5 HjO Na2Se- 9 H2〇(2-8) (2-9). (2-10) (2-11) NaOH NaSH NaSeH LiSeH (2-12) (2-13) (2-14) (2-15) 〇(MgCI)2 〇(MgBr)2 S(MgBr)2 Se(MgBr&gt;2 (2-16) (2-17) (2-18) (2-19) Among the compounds of the formula (2-1) to the formula (2-19), a compound of the formula (2-1) to the formula (2-11) is preferred, and more preferably a formula (2-4) The compound of the formula (2-11), more preferably a compound of the formula (2-5) to the formula (2-7). &lt;Compound represented by formula (3)&gt; In the above formula (3), the A ring, the B ring, the Y, Z, and m are the same as the A ring, the B ring, the Y, Z, and m of the above formula (1). significance. 16 323286 201219382 The compound represented by the formula (3A) can be produced by reacting a compound represented by the above formula (1A) with a compound represented by the above formula (2) in the presence of a transition metal.

式(3八)中,1^、11、¥、2、111及£係與前述相同意義。 式(3B)所表示化合物可藉由在過渡金屬存在下,使前 述式(1B)所表示之化合物與前述式(2)所表示之化合物反 應而製造。In the formula (3), 1^, 11, ¥, 2, 111, and £ have the same meanings as described above. The compound represented by the formula (3B) can be produced by reacting a compound represented by the above formula (1B) with a compound represented by the above formula (2) in the presence of a transition metal.

式(3B)中,R2、p、Y、Z、m及E係與前述相同意義。 前述式(3)所表示化合物例如可列舉以下化合物。 17 323286 201219382In the formula (3B), R2, p, Y, Z, m and E have the same meanings as described above. Examples of the compound represented by the above formula (3) include the following compounds. 17 323286 201219382

(3-11)(3-11)

(3·13) (3-12)(3·13) (3-12)

(3-16) 2、本毛明之第1製造方法中,前述式(2)所表示化合物之 Μ為氫原子時,若在過渡金屬存在下,使前述式(2)所表示 化合物與前述式(1)所表示之化合物反應’則可得式(5)所 表示化合物。 18 323286 201219382(3-16) 2. In the first production method of the present invention, when the oxime of the compound represented by the formula (2) is a hydrogen atom, the compound represented by the formula (2) and the above formula are present in the presence of a transition metal. The compound represented by the formula (5) can be obtained by the reaction of the compound represented by (1). 18 323286 201219382

(Z)m(Z)m

(5) &lt;式(5)所表示之化合物&gt; 式(5)中 義。 A環、B環、χ2、γ、z及^係與前述相同意 前述式⑸所表示化合物之較佳樣態係式⑽所表示 匕合物、式(5B)所表示之化合物。 (Z)m YH X2 (SA) —式(5A)中’R1各自獨立表示烧基、烧氧基、燒硫基、 方基、芳氧基、芳硫基、烯基、炔基、胺基、取代胺基、 f基、取代碎基、i素原子、酸基、醯氧基、釀胺基、雜 芳基、羧基、取代羧基、硝基或氰基。n表示〇至2之整 數。兩個η可相同或相異。f為複數個時,其等可相同戈 相異。η為2時,不拘於R之前述定義,相鄰接… Κ可相 互鍵結,而與各別之R所鍵結之碳原子共同形成環狀構 造。Ε各自獨立表示-〇---s~、-Se-或-N(R3)~。y々人 ^ κ各自獨 立表示烷基、芳基、雜方基。兩個E可相同或相異。γ z m及X2係與前述相同意義。 323286 19 201219382(5) &lt;Compound represented by formula (5)&gt; Formula (5). The A ring, the B ring, the oxime 2, the γ, the z, and the like are the same as those described above. The preferred form of the compound represented by the above formula (5) is a compound represented by the formula (10) represented by the formula (5B). (Z)m YH X2 (SA)—In the formula (5A), 'R1 independently represents an alkyl group, an alkoxy group, a sulfur group, a aryl group, an aryloxy group, an arylthio group, an alkenyl group, an alkynyl group, or an amine group. , substituted amino group, f group, substituted fragment, im group atom, acid group, decyloxy group, arylamino group, heteroaryl group, carboxyl group, substituted carboxyl group, nitro group or cyano group. n represents the integer from 〇 to 2. The two η can be the same or different. When f is plural, the same can be different. When η is 2, regardless of the above definition of R, adjacent Κ may be mutually bonded, and together with the carbon atoms bonded to the respective R, form a cyclic structure. Ε Each independently represents -〇---s~, -Se- or -N(R3)~. Y々人 ^ κ each independently represents an alkyl group, an aryl group, and a heterocyclic group. The two Es can be the same or different. γ z m and X 2 have the same meanings as described above. 323286 19 201219382

式(5B)中,p表示0至4之整數。兩個p可相同或相 異。R2各自獨立表示烧基、烧氧基、烧硫基、芳基、芳氧 基、芳硫基、烯基、炔基、胺基、取代胺基、矽基、取代 矽基、鹵素原子、醯基、醯氧基、醯胺基、雜芳基、羧基、 取代羧基、硝基或氰基。R2為複數個時,其等可相同或相 異。苯環中鄰接之碳原子分別具有R2所表示的基時,不拘 於R2之前述定義,鄰接之碳原子所具有之R2可相互鍵結, 而與前述鄰接之碳原子共同形成環狀構造。E各自獨立表 示-〇-、-S-、-Se-或-N(R3)—R3表示烷基、芳基、雜芳基。 兩個E可相同或相異。Y、Z、m及X2係與前述相同意義。 前述式(5A)中,E各自獨立,較佳為_0_、_S_、_Se_ ’ 更佳為-S-。 前述式(5B)中,E各自獨立,較佳為-0---S---Se-, 更佳為-S-。 前述式(5)所表示化合物,例如可列舉以下化合物。 20 323286 201219382 SH Br (5-1) SH BrIn the formula (5B), p represents an integer of 0 to 4. Both ps may be the same or different. R2 each independently represents an alkyl group, an alkoxy group, a thiol group, an aryl group, an aryloxy group, an arylthio group, an alkenyl group, an alkynyl group, an amine group, a substituted amine group, a fluorenyl group, a substituted fluorenyl group, a halogen atom, or a hydrazine. A group, a decyloxy group, a decylamino group, a heteroaryl group, a carboxyl group, a substituted carboxyl group, a nitro group or a cyano group. When R2 is plural, the numbers may be the same or different. When the carbon atoms adjacent to each other in the benzene ring have a group represented by R2, the definition of R2 is not limited, and R2 of the adjacent carbon atoms may be bonded to each other to form a cyclic structure together with the adjacent carbon atoms. E each independently represents -〇-, -S-, -Se- or -N(R3)-R3 represents an alkyl group, an aryl group or a heteroaryl group. The two Es can be the same or different. Y, Z, m and X2 have the same meanings as described above. In the above formula (5A), E is independently independent, and preferably _0_, _S_, _Se_' is more preferably -S-. In the above formula (5B), E is each independently, preferably -0---S---Se-, more preferably -S-. Examples of the compound represented by the above formula (5) include the following compounds. 20 323286 201219382 SH Br (5-1) SH Br

(5-6) (5-7) OH Br(5-6) (5-7) OH Br

SH BrSH Br

丨丨八丨丨 (5-8) SH Br丨丨八丨丨 (5-8) SH Br

(5-9) SH Br(5-9) SH Br

(5*10) SH Br SH Br SH Br(5*10) SH Br SH Br SH Br

(S-18) (5-19) 21 323286 201219382(S-18) (5-19) 21 323286 201219382

(5-20)(5-20)

(5-22)(5-22)

式(5-1)至式(5-28)所表示之化合物中,較佳為式(5-8) 至式(5-21)、式(5-24)至式(5-26)所表示之化合物,更佳 為式(5-11)至式(5-20)、式(5-24)所表示之化合物,又更 佳為式(5-11)至式(5-20)所表示之化合物。 式(4)所表示化合物係可藉由將前述式(5)所表示之化 合物與例如由驗金屬、驗金屬氫化物、烧基金屬 (alkylmetal)及烧基鹵化鎮所成群組選出一種以上之反應 物質反應而獲得。 (Z)mAmong the compounds represented by the formulae (5-1) to (5-28), preferred are the formulae (5-8) to (5-21) and (5-24) to (5-26). The compound represented by the formula (5-11) to the formula (5-20), the compound represented by the formula (5-24), and more preferably the formula (5-11) to the formula (5-20). Expressed as a compound. The compound represented by the formula (4) can be selected by grouping the compound represented by the above formula (5) with, for example, a metal group, a metal hydride, an alkylmetal, and a halogenated group. The reaction substance is obtained by reaction. (Z)m

(4) (Z)m ΥΗ X2(4) (Z)m ΥΗ X2

鹼金屬、鹼金屬氩化物、 烷基金屬、 烷基錤由化物等 22 323286 201219382 式(4)中,M3表示典型金屬原子或鹵化鎂基, X2、Α環及Β環係與前述相同意義β m、 驗金屬可列舉:鋰、鈉等。 鹼金屬氫化物可列舉:氫化鋰、氳化納等。 烷基金屬氫化物可列舉:曱基鋰、丁基鐘等 烧基鎂_化物可列舉:曱基氣化鎂、乙基氣 基溴化鎂、乙基溴化鎂等。 〜1:1錢、甲 使用前述式(4)所表示之化合物而可製造前迷 表示化合物。係於後述本發明第2製造方法項^式(3)所 並且,式(4)所表示之化合物中,『為鹼金屬=述。 基之化合物,係於本發明第丨製造方法中所生或南化鎂 間體。 砹之反應中 &lt;本發明之第2製造方法&gt; 本發明之第2製造方法係前述式(3)所表示化八 製造方法,其包含在過渡金屬存在下,使前述 Q物&lt; 之化合物進行分子内環化反應之步驟。 (幻所表示 〈式(4)所表示之化合物&gt; 前述式⑷巾,_㈣之料金屬較 子。鹼金屬原子可列舉:鋰原子、 為鹼金屬原 前述式⑷中,M3所表示之自化、鉀原子等。 化鎂、蛾化鎂^ 自化财列舉:氯化鎂、填 之化:斤表示之化合物較佳樣態係靡咖 &lt;化口物、式(4Β)所表示之化合物。 323286 23 201219382Alkali metal, alkali metal hydride, alkyl metal, alkyl hydrazine, etc. 22 323286 201219382 In the formula (4), M3 represents a typical metal atom or a magnesium halide group, and the X2, anthracene ring and an anthracene ring system have the same meaning as described above. m, the metal can be enumerated: lithium, sodium, and the like. Examples of the alkali metal hydride include lithium hydride, sodium hydride, and the like. The alkyl metal hydride may, for example, be a mercapto-based magnesium such as a mercaptolithium or a butyl group, and examples thereof include mercapto-calcium oxide, ethyl-mercapto-magnesium bromide, and ethylmagnesium bromide. ~1:1 money, A The compound represented by the above formula (4) can be used to produce a compound. In the second production method of the present invention, the formula (3) will be described later, and in the compound represented by the formula (4), "is an alkali metal". The compound of the group is produced by the method of the invention of the present invention or the magnesium intercalation. In the second reaction method of the present invention, the second production method of the present invention is a production method according to the above formula (3), which comprises the Q substance in the presence of a transition metal. The step of the compound undergoing an intramolecular cyclization reaction. (A compound represented by the formula (4) is represented by the above formula (4), and the metal of the above formula (4) is a substrate. The alkali metal atom may be a lithium atom or an alkali metal. In the above formula (4), M3 represents Chemical, potassium atom, etc. Magnesium, molybdenum magnesium ^ Self-financing list: magnesium chloride, filling: the compound represented by the pound is better than the compound, the compound represented by the formula (4Β). 323286 23 201219382

式(4)中,R1各自獨立表示烷基、烷氧基、烷硫基、芳 基、芳氧基、芳硫基、烯基、炔基、胺基、取代胺基、砂 基、取代石夕基、鹵素原子、酿基、醱氧基、酿胺基、雜芳 基、羧基、取代羧基、硝基或氰基。 η表示0至2之整數。兩個η可相同或相異。R1為複 數個時,其等此可相同或相異。η為2時,不拘於R1之前 述定義,相鄰接之R1可相互鍵結,而與各別之R1所鍵結之 碳原子共同形成環狀構造。Ε各自獨立表示-0-、-S~、-se~ 或-N(R3)-。R3各自獨立表示院基、芳基、雜芳基。兩個£ 町相同或相異。Y、Μ3、Z、m及X2係與前述相同意義。In formula (4), R1 each independently represents alkyl, alkoxy, alkylthio, aryl, aryloxy, arylthio, alkenyl, alkynyl, amine, substituted amine, sand, substituted stone An oxime group, a halogen atom, a brewing group, a decyloxy group, a arylamino group, a heteroaryl group, a carboxyl group, a substituted carboxyl group, a nitro group or a cyano group. η represents an integer of 0 to 2. The two η can be the same or different. When R1 is plural, the same may be the same or different. When η is 2, R1 may be bonded to each other regardless of the definition of R1, and a ring structure may be formed together with the carbon atoms bonded to the respective R1. Ε Each independently represents -0, -S~, -se~ or -N(R3)-. R3 each independently represents a substituent, an aryl group, and a heteroaryl group. The two towns are the same or different. Y, Μ3, Z, m and X2 have the same meanings as described above.

式(4B)中,p表示0至4之整數。兩個p可相同或相 異。R2各自獨立表示烷基、烷氧基、烷硫基、芳基、芳氣 基、芳硫基、稀基、炔基、胺基、取代胺基、矽基、取代 石夕基、鹵素原子、酿基、醯氧基、醢胺基、雜芳基、竣或、 取代羰基、硝基或氰基。R2為複數個時’其等可相同或相 異。苯環中鄰接之碳原子分別具有R所表不的基時,不寺勺 323286 24 201219382 於R之别述定義’鄰接之碳原子所具有之R2可相互鍵結, 而與則述鄰接之碳原子共同形成環狀構造。E各自獨立表 示-0-、-s-、-Se-或-W)_。r3各自獨立表示烷基、芳基、 雜芳基。兩個E可相同或相異。γ、M3、z、m &amp; χ2係與前 述相同意義。 刖述式(4Α)中’ Ε各自獨立,較佳為_〇---s---Se一, 更佳為_S-。 刖述式(4B)中’ E各自獨立,較佳為_〇---s---Se_, 更佳為-S-。 前述式(4)所表示化合物’例如可列舉以下化合物。In the formula (4B), p represents an integer of 0 to 4. Both ps may be the same or different. R 2 each independently represents an alkyl group, an alkoxy group, an alkylthio group, an aryl group, an aryl group, an arylthio group, a dilute group, an alkynyl group, an amine group, a substituted amine group, a fluorenyl group, a substituted fluorenyl group, a halogen atom, Alkyl, decyloxy, decylamino, heteroaryl, hydrazine or substituted carbonyl, nitro or cyano. When R2 is plural, the terms may be the same or different. When the adjacent carbon atoms in the benzene ring respectively have a group represented by R, the shovel 323286 24 201219382 is defined in R. The R2 of the adjacent carbon atoms may be bonded to each other, and the adjacent carbon is The atoms together form a ring structure. E each independently represents -0, -s-, -Se- or -W)_. R3 each independently represents an alkyl group, an aryl group, or a heteroaryl group. The two Es can be the same or different. The γ, M3, z, m &amp; χ2 series have the same meanings as described above. In the description (4Α), ’ is independent, preferably _〇---s---Se, more preferably _S-. In the above formula (4B), 'E' is independent, preferably _〇---s---Se_, more preferably -S-. The compound represented by the above formula (4) is exemplified by the following compounds.

SNa BrSNa Br

(4-10) 323286 25 201219382(4-10) 323286 25 201219382

(4-11&gt; SNa Br(4-11&gt; SNa Br

(4-12)(4-12)

ηΌ4Η9ΌΌ4Η9

SMgBrSMgBr

(4-20) (4-21) (4-22)(4-20) (4-21) (4-22)

(4-23)(4-23)

SeU ISeU I

(4-24)(4-24)

(4_27) (4-28) 式(4-1)至式(4-28)之化合物中,較佳為式(4-8)至式 (4-21)、式(4-24)至式(4-26)之化合物,更佳為式(4_ιι) 至式(4_2〇)、式(4-24)之化合物,又更佳為式(411)至式 (4-20)之化合物。 323286 26 201219382 &lt;過渡金屬錯合物&gt; 本發明第1製造方法及第2製造方法中所使用之過渡 * 金屬錯合物’較佳為含有第8至10族元素之過渡金屬錯合 物’更佳為含有第10族元素之過渡金屬錯合物,又更佳為 鈀錯合物、鎳錯合物,特佳為鈀錯合物。 前述過渡金屬錯合物較佳為至少具有一個膦配體 (phosphine ligand)。 前述過渡金屬錯合物中亦含有過渡金屬錯合物前驅 物。在此,過渡金屬錯合物前驅物係表示反應系統中轉換 為過渡金屬錯合物之組成物,其為含有前驅物用過渡金屬 錯合物與膦配體或鱗鹽之組成物。 别述把錯合物可列舉:肆(三苯基膦)把(〇)、肆(三曱 苯基膦)鈀(0)(包括鄰、間、對之各種取代異構物)、雙(三 苯基膦)二氯化鈀(II)、雙(三環己基膦)二氯化鈀(11)、雙 (二乙基膦)二氣化鈀(Π)、[1,2-雙(二苯基膦基)乙烷]二 氯化鈀(11)、[丨,1’ -雙(二苯基膦基)二茂鐵]二氯化鈀(II) ([1,1 -bis(diphenylphosphino)ferrocene] palladlum⑴)dichloride)、雙(乙腈)二氯化把⑴)、及 雙(苯甲腈)二氯化鈀(Π)等。 其中較佳為肆(三苯基膦)把(〇)、肆(三甲苯基膦)把 (〇)(包括鄰、間、對之各種取代異構物)。 前述鎳錯合物可列舉:肆(三苯基膦)鎳(〇)、雙(三苯 基膦)二氣化鎳(Π)、[1,2-雙(二苯基膦基)乙烷]二氯化 鎳(11)、[1,3~雙(二苯基膦基)丙烷]二氣化鎳(II)、[1,4- 27 323286 201219382 雙(二苯基膦基)丁烷]二氣化鎳(II)、[1,Γ-雙(二笨基膦 基)二茂鐵]二氣化鎳(II)等。 前述前驅物用過渡金屬錯合物可列舉:Pd2(dba)3(此 處dba表示反式,反式-二亞苄基丙酮 (trans,trans'dibenzylideneacetone))、Pd(dba)2、醋 酸鈀(II)、雙(1,5-環辛二烯)鎳(0)等。 其中較佳為 Pd2(dba)3、Pd(dba)2、醋酸le(II)。 一前述膦配體可列舉:三(正丁基)膦、三(第三丁基)膦、 :¼己基鱗、三環戊基膦、三节基膦等三烷基膦類;及三 笨基膦、二甲笨基膦(包括鄰、間、對之各種取代異構物)、 參甲氧基笨基)膦(包括鄰、間、對之各種取代異構物)等 1基膦類;二笨基環己基膦等二芳基絲膦類;二環己 基苯基膦、(2〜聯苯基)二(第三丁基)膦等二烷基芳基膦 ’ ’雙(二笨基膦)乙烷、1,3-雙(二苯基膦)丙烷、丨, 雙(二苯基膦)環己烷、1,3-雙(二苯基膦)苯、1,1,—雙 ^ 一戊鐵等二配位基膦(bidentate phosphine)類。 一、交佳為二(第二丁基)膦、三環己基膦、(2 -聯笨基) 二(第三丁基)膦。 土 則述鱗鹽係上述膦配體與HBFo HPF6、HSbFe等酸之_ 類,可列崴· -/ 孤 卜 .二(正丁基)鱗四氟硼酸鹽、三(第三丁基)鱗 :氟微鹽、三笨基鐫六氣_酸鹽、三苯基鱗六氟録酸魄 專。 现 其中較佳為三(第三丁基)鱗四氟硼酸鹽。 使用則述鱗鹽時,為了將鱗鹽於反應溶液中轉換為膦 28 323286 201219382 配體,復可添加驗。 • 前述鹼可列舉:氫氧化鈉、氩氧化鉀、醋酸鈉、醋酸 ' 卸、碳酸鈉、碳酸舒、碳酸絶、氟化鈉、氟化鉀、麟酸鈉 及酸钟等。 其中較佳為碳酸鈉、碳酸鉀、碳酸鉋。 調節過渡金屬錯合物與前驅物用過渡金屬錯合物之使 用量,使反應系統中存在適量過渡金屬。相對於前述式 (1)、式(1A)、式(1B)、式(4)、式(4A)或式(4B)所表示之 化合物1莫耳’反應系統中過渡金屬之適合量為〇 〇〇〇1 至10莫耳’較佳為0.001至1莫耳,更佳為〇 〇1至0.5 莫耳。 相對於前述式(1)、式(1A)、式(1B)、式(4)、式(4A) 或式(4B)所表示之化合物丨莫耳,過渡金屬錯合物之使用 量較佳為0.0001至10莫耳,更佳為〇 〇〇1至i莫耳。 相對於前述式(1)、式(1A)、式(1B)、式(4)、'式(4A) 或式(4B)所表示之化合物丨莫耳,前驅物用過渡金屬錯合 物之使用量較佳為0.0001至1〇莫耳,更佳為〇 〇〇 莫耳。 · 相對於前驅物用過渡金屬錯合物i莫耳,膦配體之使 用量較佳為1至10莫耳,更佳為i至4莫耳。 相對於前驅物用過渡金屬錯合物丨莫耳,鱗鹽之使用 量較佳為1至10莫耳’更佳為1至4莫耳。 相對於鱗鹽1莫耳,鹼之使用量較佳為丨至1〇莫耳, 更佳為1至5莫耳。 ' 323286 29 201219382 並且’過渡金屬錯合物可單獨使用一種或併用兩種以 上。 可將添加於反應系統中之過渡金屬錯合物的量分為複 數-人’而逐次添加。本發明製造方法中添加過渡金屬錯 合物後’右經過一定時間反應速度會下降,但在此狀態復 添加過渡金屬錯合物時可提升反應速度。 &lt;反應條件&gt; 本發明第1製造方法及第2製造方法中,反應溫度較 佳為別至300 c。從有效率地進行反應之觀點來看,更佳 為50 C以上’又更佳為8『c以上。此外,由抑制副反應之 觀點來看’更佳為25(Tc以下,又更佳為·。c以下。 ,應時間通常為丨至2GM、時。從反應充分進行之觀 點來看’較佳為1小時以上。 t反射在聽媒下崎,也可在溶媒存在下進行, 但較佳為在溶媒存在下進行。 ^ _ 疋仃使用溶媒時,此溶媒為反應惰 溶媒;二單獨使用—種或混合複數種溶媒使用。 甲笨等芳香族jr ^己烧、甲基環己貌等脂肪族烴溶媒;苯、 溶氮味喃、笨甲一雜系(4_27) (4-28) Among the compounds of the formulae (4-1) to (4-28), preferred are the formula (4-8) to the formula (4-21), the formula (4-24) to the formula The compound of (4-26) is more preferably a compound of the formula (4_ιι) to the formula (4_2〇), the formula (4-24), still more preferably a compound of the formula (411) to the formula (4-20). 323286 26 201219382 &lt;Transition metal complex&gt; The transition metal complex according to the first production method and the second production method of the present invention is preferably a transition metal complex containing a Group 8 to 10 element. More preferably, it is a transition metal complex containing a Group 10 element, more preferably a palladium complex, a nickel complex, and particularly preferably a palladium complex. The aforementioned transition metal complex preferably has at least one phosphine ligand. The transition metal complex also contains a transition metal complex precursor. Here, the transition metal complex precursor means a composition converted into a transition metal complex in the reaction system, which is a composition containing a transition metal complex of a precursor and a phosphine ligand or a scale salt. Other examples include: hydrazine (triphenylphosphine) palladium (0), hydrazine (triphenylphosphine) palladium (0) (including ortho, meta, and various substituted isomers), double ( Triphenylphosphine) palladium(II) dichloride, bis(tricyclohexylphosphine)palladium dichloride (11), bis(diethylphosphine) di-palladium (palladium), [1,2-double ( Diphenylphosphino)ethane]palladium dichloride (11), [丨,1'-bis(diphenylphosphino)ferrocene]palladium(II) dichloride ([1,1 -bis( Diphenylphosphino) ferrocene] palladlum (1)) dichloride), bis(acetonitrile) dichloride (1)), and bis(benzonitrile) palladium dichloride (ruthenium). Among them, ruthenium (triphenylphosphine) is preferably substituted for (ruthenium) and osmium (trimethylphosphine) (including ortho, meta, and various substituted isomers). The nickel complex compound may be exemplified by ruthenium (triphenylphosphine) nickel (ruthenium), bis(triphenylphosphine) nickel dihydride (ruthenium), and [1,2-bis(diphenylphosphino)ethane. Nickel dichloride (11), [1,3~bis(diphenylphosphino)propane] nickel (II), [1,4- 27 323286 201219382 bis(diphenylphosphino)butane Di-vaporized nickel (II), [1, bis-bis(diphenylphosphino)ferrocene] nickel (II), etc. The transition metal complex of the foregoing precursor may be exemplified by Pd2(dba)3 (where dba represents trans, trans'dibenzylideneacetone), Pd(dba)2, palladium acetate (II), bis(1,5-cyclooctadiene)nickel (0), and the like. Among them, Pd2(dba)3, Pd(dba)2, and acetic acid le(II) are preferred. The foregoing phosphine ligand may, for example, be a trialkylphosphine such as tri(n-butyl)phosphine, tri(tert-butyl)phosphine, :1⁄4-hexyl scale, tricyclopentylphosphine or trisylphosphine; a phosphine, dimethylphenylphosphine (including ortho, meta, and various substituted isomers thereof), methoxyphenyl phosphine (including ortho, meta, and various substituted isomers thereof); Diarylsilylphosphines such as diphenylcyclohexylphosphine; dialkylhexylphenylphosphines, dialkylarylphosphines such as (2~biphenyl)bis(t-butyl)phosphine, 'bis(diphenyl) Phosphine) ethane, 1,3-bis(diphenylphosphino)propane, hydrazine, bis(diphenylphosphino)cyclohexane, 1,3-bis(diphenylphosphino)benzene, 1,1,-double ^ A class of bidentate phosphines such as ferric iron. 1. The cross is preferably a di(t-butyl)phosphine, a tricyclohexylphosphine, or a (2-butyryl) bis(t-butyl)phosphine. The squamous salt is the above-mentioned phosphine ligand and the likes of HBFo HPF6, HSbFe and the like, which can be listed as 崴··/ 孤卜. Di(n-butyl) squamous tetrafluoroborate, tris(tert-butyl) scale : Fluorine micro-salt, three stupid base, six gas _ acid salt, triphenyl squamous hexafluoride acid sputum. Among them, tris(t-butyl)sulphate tetrafluoroborate is preferred. When the scale salt is used, in order to convert the scale salt into a phosphine 28 323286 201219382 ligand in the reaction solution, the test may be added. • Examples of the base include sodium hydroxide, potassium argon oxide, sodium acetate, acetic acid 'unloading, sodium carbonate, carbonic acid, carbonic acid, sodium fluoride, potassium fluoride, sodium citrate, and acid clock. Among them, sodium carbonate, potassium carbonate, and carbonic acid planing are preferred. The transition metal complex is adjusted to the amount of transition metal complex used in the precursor to provide an appropriate amount of transition metal in the reaction system. The suitable amount of transition metal in the compound 1 molar reaction system represented by the above formula (1), formula (1A), formula (1B), formula (4), formula (4A) or formula (4B) is 〇 〇〇〇1 to 10 mol' is preferably from 0.001 to 1 mol, more preferably from 1 to 0.5 mol. The amount of the transition metal complex is preferably used in comparison with the compound represented by the above formula (1), formula (1A), formula (1B), formula (4), formula (4A) or formula (4B). It is from 0.0001 to 10 m, more preferably from 1 to i. The precursor is a transition metal complex with respect to the compound represented by the above formula (1), formula (1A), formula (1B), formula (4), formula (4A) or formula (4B). The amount used is preferably 0.0001 to 1 Torr, more preferably 〇〇〇. The phosphine ligand is preferably used in an amount of from 1 to 10 moles, more preferably from i to 4 moles, per mole of the transition metal complex i mole relative to the precursor. The scale salt is preferably used in an amount of from 1 to 10 moles, more preferably from 1 to 4 moles, per mole of the transition metal complex of the precursor. The base is preferably used in an amount of from 1 to 5 moles, more preferably from 1 to 5 moles, per mole of the scale salt. ' 323286 29 201219382 and the 'transition metal complexes may be used alone or in combination of two or more. The amount of the transition metal complex added to the reaction system can be divided into plural-human's and added one by one. In the production method of the present invention, after the addition of the transition metal complex, the reaction rate decreases after a certain period of time, but the reaction rate can be increased when the transition metal complex is recombined in this state. &lt;Reaction conditions&gt; In the first production method and the second production method of the present invention, the reaction temperature is preferably from 300 c to 300 c. From the viewpoint of efficient reaction, it is more preferably 50 C or more and more preferably 8 c or more. Further, from the viewpoint of suppressing side reactions, it is more preferably 25 (Tc or less, more preferably c. or less. The time is usually 丨 to 2 GM, and it is preferable from the viewpoint that the reaction is sufficiently carried out. The reaction is carried out in the presence of a solvent, but it is preferably carried out in the presence of a solvent. ^ _ 疋仃 When a solvent is used, the solvent is a reaction inert solvent; Or use a mixture of a plurality of solvents. Aromatic hydrocarbon solvents such as aromatic jr ^ hexane, methyl ring, etc.; benzene, nitrogen soluble odor, stupid one

/合媒,1-甲基-2-吡咯烷酮Q N,N-二甲基甲醯胺、N,N— 7卜2-,1 id_)、 4非質子性極性溶媒;水。較 w 媒、非好性極性溶媒。佳為㈣族烴溶媒、喊系溶 前述反應可在空氣中進行, 行’但較佳為在氮、氬等惰性 也可在惰性氣體環境下進 氣體環境下進行 323286 30 201219382 接著,說明具體之反應操作,首先以惰性氣體取代反 應容器全體之氣體後,於此容器中添加式(1)所表示之化合 物、式(2)所表示之化合物、過渡金屬錯合物及溶媒,並且 混合。將所得混合物以期望的溫度反應。反應結束後,藉 由將所得反應生成物直接濃縮、或是藉由將反應物加入水 中,且使用曱苯、醋酸乙酯、乙醚、二氯曱烷等有機溶媒 萃取後,將所得有機層濃縮,而可得到期望之式(3)所表示 之化合物。再者,此化合物可藉由管柱層析、萃取、再結 晶或蒸德而精製。 &lt;反應機構&gt; 在本發明中,推定前述式(3)所表示之化合物係藉由以 下反應機構而生成。 首先’將Μ所表示之過渡金屬錯合物氧化加成於前述 式(1)所表示之化合物’而形成下述式(6)所表示之化合 物。下述式(6)所表示之化合物與前述式(2)所表示之化合 物間進行金屬置換反應,而生成下述式(7)所表示之化合 物。自下述式(7)所表示之化合物將過渡金屬錯合物μ還原 脫去’且生成Μ3為驗金屬或4化鎂基之前述式(4)所表示 之化合物’同時再生金屬錯合物Μ。 31 323286 (2) 201219382 MX2 MX2/Compound, 1-methyl-2-pyrrolidone Q N,N-dimethylformamide, N,N-7b 2-,1 id_), 4 aprotic polar solvent; water. More w media, non-good polar solvents. The above-mentioned reaction can be carried out in air, but it is preferably carried out under inert gas atmosphere or under inert gas atmosphere. 323286 30 201219382 Next, the specific description is given. In the reaction operation, first, the gas of the entire reaction vessel is replaced with an inert gas, and then the compound represented by the formula (1), the compound represented by the formula (2), the transition metal complex, and the solvent are added to the vessel and mixed. The resulting mixture is reacted at the desired temperature. After the completion of the reaction, the obtained reaction product is directly concentrated, or the reaction mixture is added to water, and extracted with an organic solvent such as toluene, ethyl acetate, diethyl ether or dichloromethane to concentrate the obtained organic layer. The desired compound represented by the formula (3) can be obtained. Further, the compound can be purified by column chromatography, extraction, recrystallization or steaming. &lt;Reaction mechanism&gt; In the present invention, it is estimated that the compound represented by the above formula (3) is produced by the following reaction mechanism. First, the transition metal complex represented by hydrazine is oxidized and added to the compound represented by the above formula (1) to form a compound represented by the following formula (6). The compound represented by the following formula (6) is subjected to a metal substitution reaction with the compound represented by the above formula (2) to produce a compound represented by the following formula (7). The compound represented by the following formula (7) is obtained by reducting the transition metal complex μ and forming a compound represented by the above formula (4) in which the ruthenium 3 is a metal or a magnesium compound. Hey. 31 323286 (2) 201219382 MX2 MX2

(4) 式中,M表示過渡金屬錯合物。Μ1、Μ2、Y、Z、m、X1、 X2、A環及B環係具有與前述相同意義。 接著,將Μ所表示之過渡金屬錯合物氧化加成於前述 式(4)所表示之化合物,而形成下述式(8)所表示之化合 物。下述式(8)所表示之化合物進行分子内金屬置換反應, 而生成下述式(9)所表示之化合物。自下述式(9)所表示之 化合物將過渡金屬錯合物Μ還原脫去,而生成前述式(3) 所表示之化合物,同時再生金屬錯合物Μ。 32 323286 201219382(4) wherein M represents a transition metal complex. Μ1, Μ2, Y, Z, m, X1, X2, A ring and B ring system have the same meanings as described above. Then, the transition metal complex represented by ruthenium is oxidized and added to the compound represented by the above formula (4) to form a compound represented by the following formula (8). The compound represented by the following formula (8) undergoes an intramolecular metal displacement reaction to produce a compound represented by the following formula (9). The compound represented by the following formula (9) is subjected to reduction-removal of the transition metal complex oxime to form a compound represented by the above formula (3), and at the same time, a metal complex ruthenium is regenerated. 32 323286 201219382

⑼ W (8) 式中,Μ表示過渡金屬錯合物。M^M^Y'Z'm'X1、 X2、A環及B環係具有與前述相同意義。 由上述反應機構,在過渡金屬錯合物存在下,將前述 式(1)所表示之化合物與前述式(2)所表示之化合物,於反 應系統中經由前述式(4)所表示化合物,而製造前述式(3) 所表示之化合物。 換言之,前述式(3)所表示之化合物可在過渡金屬錯合 物存在下,由前述式(1)所表示之化合物與前述式(2)所表 示之化合物而製造,此外,前述式(3)所表示之化合物可在 過渡金屬錯合物存在下,由前述式(4)所表示之化合物所製 造。 &lt;有機薄膜&gt; 接著,說明有關於含有藉由本發明製造方法所得前述 式(3)所表示之化合物之有機薄膜。 有機薄膜適當的厚度係對應該有機薄膜適用之元件而 有所不同,通常在lrnn至100/zin之範圍,較佳為2nm至 33 323286 201219382 lOOOnm,更佳為5nm至500nm,又更佳為20nm至200nm。 藉由此等厚度之有機薄膜,較容易形成具有良好電荷 輸送性、強度也足夠之有機薄膜元件。 有機薄膜可為單獨含有一種前述式(3)所表示之化合 物者,亦可為含有兩種以上者。有機薄膜含有前述式(3) 所表示之化合物以外的成分時,較佳為含有前述式(3)所表 示之化合物10質量%以上,更佳為含有30質量%以上。 前述式(3)所表示之化合物含量未達30質量%時,會有薄 膜化變困難、難以得到良好電荷移動性的傾向 前述式(3)所表示之化合物以外的成分,例如可舉出前 述式(3)所表示之化合物以外的有機半導體材料。 &lt;有機薄膜元件&gt; 由於本發明之有機薄膜可發揮高電荷輸送性,故可輸 送設於有機薄膜元件之電極所注入之電荷、或是由吸收光 所產生之電荷。 利用此等特性,可適合用於有機薄膜電晶體、有機太 陽能電池、光感應器、有機電致發光顯示器等有機薄膜元 件。 特別適用於作為有機薄膜電晶體之電荷輸送材料。 (實施例) 以下,以實施例更加詳細說明本發明,但本發明並不 限定於此。 (高效液相層析儀(HPLC)) 在實施例中,HPLC面積百分比值係藉由高效液相層析 34 323286 201219382 儀(HPLC、島津製作所製、商品名:LC-20AD),使用在254nm * 波長所測得之層析圖(chromatogram)之值。將測定化合物 * 溶解於四氫吱喃,並注入HPLC所得之溶液〇. 5 a l。HPLC 移動相係使用0. 1%醋酸水溶液(Α液)及加入〇. 1%醋酸的 乙腈(Β液),以0· 5mL/分之流速,設定成耗時6分鐘,使 A液對於B液之容積比成為(A液)/(B液)=80/20至0/100 之梯度而流動。管柱使用Shim-pack XR-0DS内徑2. 0 mmx 長度75醒(島津製作所製)。偵測器使用發光二極體陣列式 檢測器(島津製作所製、商品名:SPD-M20A)。 (質量分析) 在實施例中,藉由AccuTOP TLC JMS-T100TD(日本電 子製)而求質量分析之值。 (丽R分析) 將化合物溶解在重氯仿,使用NMR裝置(Varian公司 製、INOVA300)進行NMR測定。 (實施例1) (嗔吩並[3, 2-b:4, 5-b’ ]二苯並[b]°塞吩之合成)(9) W (8) where Μ represents a transition metal complex. M^M^Y'Z'm'X1, X2, A ring and B ring system have the same meanings as described above. The compound represented by the above formula (1) and the compound represented by the above formula (2) are reacted in the reaction system with the compound represented by the above formula (4) in the presence of a transition metal complex. The compound represented by the above formula (3) is produced. In other words, the compound represented by the above formula (3) can be produced from the compound represented by the above formula (1) and the compound represented by the above formula (2) in the presence of a transition metal complex, and the above formula (3) The compound represented by the above formula can be produced from the compound represented by the above formula (4) in the presence of a transition metal complex. &lt;Organic film&gt; Next, an organic film containing the compound represented by the above formula (3) obtained by the production method of the present invention will be described. The appropriate thickness of the organic film varies depending on the element to which the organic film is applied, and is usually in the range of lrnn to 100/zin, preferably 2 nm to 33 323286 201219382 lOOOnm, more preferably 5 nm to 500 nm, still more preferably 20 nm. To 200nm. With such an organic film of equal thickness, it is easier to form an organic thin film element having good charge transportability and sufficient strength. The organic film may be a compound represented by the above formula (3) alone or in combination of two or more. When the organic film contains a component other than the compound represented by the above formula (3), it is preferably contained in an amount of 10% by mass or more, more preferably 30% by mass or more, based on the compound represented by the above formula (3). When the content of the compound represented by the above formula (3) is less than 30% by mass, the film formation becomes difficult, and it is difficult to obtain good charge mobility, and the components other than the compound represented by the above formula (3) are preferable. An organic semiconductor material other than the compound represented by the formula (3). &lt;Organic thin film element&gt; Since the organic thin film of the present invention exhibits high charge transportability, it is possible to transport an electric charge injected from an electrode provided in the organic thin film element or an electric charge generated by absorbing light. With these characteristics, it can be suitably used for organic thin film devices such as organic thin film transistors, organic solar cells, light sensors, and organic electroluminescence displays. It is especially suitable for charge transport materials as organic thin film transistors. (Embodiment) Hereinafter, the present invention will be described in more detail by way of examples, but the invention is not limited thereto. (High Performance Liquid Chromatography (HPLC)) In the examples, the HPLC area percentage value was used by high performance liquid chromatography 34 323286 201219382 (HPLC, manufactured by Shimadzu Corporation, trade name: LC-20AD), used at 254 nm. * The value of the chromatogram measured by the wavelength. The test compound * was dissolved in tetrahydrofuran, and the solution obtained by HPLC was injected. 5 a l. HPLC mobile phase system using 0.1% acetic acid aqueous solution (sputum solution) and adding 〇. 1% acetic acid in acetonitrile (sputum solution), at a flow rate of 0.5 mL / min, set to take 6 minutes, so that A liquid for B The volume ratio of the liquid flows as a gradient of (A liquid) / (B liquid) = 80/20 to 0/100. The column was shampooed using Shim-pack XR-0DS 2. 0 mmx length 75 (manufactured by Shimadzu Corporation). The detector uses a light-emitting diode array detector (manufactured by Shimadzu Corporation, trade name: SPD-M20A). (Quality Analysis) In the examples, the value of the mass analysis was obtained by AccuTOP TLC JMS-T100TD (manufactured by Nippon Electronics Co., Ltd.). (R R analysis) The compound was dissolved in heavy chloroform, and NMR measurement was carried out using an NMR apparatus (manufactured by Varian Co., Ltd., INOVA300). (Example 1) (Synthesis of 嗔-[3,2-b:4, 5-b']dibenzo[b]°Cetene)

Br Br Pd(PPh3)4Br Br Pd(PPh3)4

Na2S · 9H20 — _Na2S · 9H20 — _

NMP Ο·”) (3-8) 於以氮氣取代燒瓶内氣體之lOOmL燒瓶内,加入3, 3,-二溴-2, 2’ -二(苯並[b]噻吩)(0. 10g、0· 24mmol)、硫化鈉 九水合物(0. 056g、〇. 24顏〇1)、肆(三笨基膦)鈀 35 323286 201219382 (0)(Pd(PPh3)4)(14mg)及卜曱基-2-吡咯烷酮(10mL),在 160°C加熱攪拌6小時。 以HPLC分析反應液,求得面積百分比,化合物(3-8) 之面積為61%、化合物(1-11)之面積為25%。 (實施例2) 〇塞吩並[3, 2-b:4, 5-b’ ]雙苯並[b]嚷吩之合成)Ng Ο·”) (3-8) In a 100 mL flask in which the gas in the flask was replaced with nitrogen, 3,3,-dibromo-2,2'-di(benzo[b]thiophene) (0. 10 g, 0·24mmol), sodium sulfide nonahydrate (0. 056g, 〇. 24 〇 〇 1), 肆 (triphenylphosphine) palladium 35 323286 201219382 (0) (Pd (PPh3) 4) (14mg) and 曱 曱 - 2-Pyrrolidone (10 mL), and the mixture was stirred under heating at 160 ° C for 6 hours. The reaction liquid was analyzed by HPLC to obtain an area percentage, the area of the compound (3-8) was 61%, and the area of the compound (1-11) was 25%. (Example 2) Synthesis of oxeno[3,2-b:4,5-b']bisbenzo[b]porphin)

Pd2(dba)3 [PfBuH][BF4]Pd2(dba)3 [PfBuH][BF4]

Na2S · 9H20 K2C03Na2S · 9H20 K2C03

NMP (1-11) (3-8) 於以氮氣取代燒瓶内氣體之100mL燒瓶内,加入3, 3’ -二溴-2, 2’ -二(苯並[b]嗟吩)(0. 10g、0. 24mmol)、硫化納 九水合物(0. 056g、0. 24mmol)、碳酸鉀(0. 13g、0· 94mmol)、 參(二亞苄基丙酮)二纪(Pd2(dba)3)(5. 4mg)、三(第三丁基) 鱗四氟硼酸鹽(14mg)及卜曱基-2-吡咯烷酮(10mL),在110 乞加熱攪拌6小時。 以HPLC分析反應液,求得面積百分比,化合物(3-8) 之面積為63%、化合物(1-11)之面積為34%。 (實施例3) (噻吩並[3, 2-b:4, 5-b’ ]雙苯並[b]噻吩之合成) 36 323286 .201219382NMP (1-11) (3-8) In a 100 mL flask in which the gas in the flask was replaced with nitrogen, 3,3'-dibromo-2,2'-di(benzo[b] porphin) was added. 10g, 0. 24mmol), sodium sulphide sulphide (0. 056g, 0.25mmol), potassium carbonate (0.13g, 0.94mmol), ginseng (dibenzylideneacetone) gemini (Pd2(dba)3 (5. 4 mg), tris(t-butyl) scaly tetrafluoroborate (14 mg) and dimercapto-2-pyrrolidone (10 mL) were stirred and heated at 110 Torr for 6 hours. The reaction liquid was analyzed by HPLC to obtain an area percentage, the area of the compound (3-8) was 63%, and the area of the compound (1-11) was 34%. (Example 3) (Synthesis of thieno[3,2-b:4,5-b']bisbenzo[b]thiophene) 36 323286 .201219382

Br Br Pd(PPh3)4Br Br Pd(PPh3)4

Na2S · 9H20 一 ►Na2S · 9H20 a ►

NMP 於以氮氣取代燒瓶内氣體之l〇〇mL燒瓶内,加入3, 3,-一&gt;臭_2, 2 -—(本並[b]嗟吩)(〇. 5〇g、1. 2mmol)、硫化鈉九 水合物(0. 28g、1. 2imnol)、pd(PPh3)4(68mg)及 1-曱基-2-°比咯烷酮(50mL),在140°C加熱攪拌1〇小時。其後在燒瓶 内加入Pd(PPh3)4(68mg),在140°C加熱擾拌5小時。 以HPLC分析反應液’求得面積百分比,化合物(3—8) 之面積為64%、化合物(1-11)之面積為〇%。 於反應液注入100mL水而得析出物。將該析出物過濾 後以曱醇洗淨,而得固體。使用矽膠管柱將所得固體精製, 而得化合物(3-8)0. 19g。收率為53%。 1H _NMR(3 00MHz,CDCI3)S7.89(m,4H),7· 4 7 (m, 2 Η) , 7: 3 9 (m, 2H) (化合物(3-8)之反應中間體之質量分析) 在實施例3中,將反應開始後經過21小時之反應液進 行質里为析’而得m/z為529.96之片段(fragment) 〇 m/z為529. 96之片段係於反應機構項目說明之對應前 述式(7)所表示之化合物及前述式(8)所表示之化合物的質 量數而來者,測定結果顯示存在有作為前述反應機構及中 間體之前述(4)所表示之化合物。 所檢測之質量數的構造係以下式所表示之鈉加成之化 37 323286 201219382 合物。 兩者質量數皆相同為528.73。推定在反應液中,膦配 位於下述式中的鈀上。 fa + Br | Pd 8r SNa Pd j 十 Na J L + Na 對應前述式(7)所表示之化合物 對應前述式(8)所表示之化合物 (合成例1 ) (6_辛基苯並[b]°塞吩之合成) C8H17B(OH)2NMP was added to a l〇〇mL flask in which the gas in the flask was replaced with nitrogen, and 3, 3, -1 &gt; odor _2, 2 - (the benzo[b] porphin) (〇. 5〇g, 1. 2mmol), sodium sulfide nonahydrate (0.28g, 1.2imnol), pd(PPh3)4 (68mg) and 1-mercapto-2-pyrrolidone (50mL), heated and stirred at 140 °C 1 Hour. Thereafter, Pd(PPh3)4 (68 mg) was added to the flask, and the mixture was heated and stirred at 140 °C for 5 hours. The area of the reaction solution was determined by HPLC to determine the area percentage, the area of the compound (3-8) was 64%, and the area of the compound (1-11) was 〇%. The reaction liquid was poured into 100 mL of water to obtain a precipitate. The precipitate was filtered and washed with methanol to give a solid. The product (3-8) was obtained by the use of a ruthenium. The yield was 53%. 1H _NMR (3 00MHz, CDCI3) S7.89 (m, 4H), 7· 4 7 (m, 2 Η), 7: 3 9 (m, 2H) (mass of the reaction intermediate of compound (3-8) In the third embodiment, the reaction solution after 21 hours from the start of the reaction was subjected to mass spectrometry to obtain a fragment having a m/z of 529.96 and a 〇m/z of 529. 96 was attached to the reaction mechanism. In the case of the compound represented by the above formula (7) and the mass of the compound represented by the above formula (8), the measurement results indicate that the above-mentioned reaction mechanism and intermediate are represented by the above (4). Compound. The structure of the mass detected is a sodium addition represented by the following formula 37 323286 201219382. Both mass numbers are the same as 528.73. It is presumed that in the reaction liquid, the phosphine is coordinated to palladium in the following formula. Fa + Br | Pd 8r SNa Pd j Dec Na JL + Na corresponds to the compound represented by the above formula (7) corresponding to the compound represented by the above formula (8) (Synthesis Example 1) (6-octylbenzo[b]° Synthesis of phenotype) C8H17B(OH)2

PdCI2(dppf) THF n-CeH^^^S7 H2〇 於以IL氣取代燒瓶内氣體之10OmL燒瓶内,加入6-溴 苯並[b]°塞吩(4. Og、19mmol)、辛基硼酸(4. 5g、28mmol)、 [1,Γ -雙(二苯基膦基)二茂鐵]二氯化鈀(PbCMdppf)) (0. 10g、0. 19mmol)及四氫吱喃(120mL),並一邊加熱迴流 一邊滴入氫氧化卸水溶液(2. 3M、24mL)。滴入結束後,加 熱迴流13小時。將反應溶液濃縮,加入曱苯與水,並萃取 曱苯溶液。將曱苯溶液濃縮。使用矽膠管柱將濃縮之溶液 精製,而得到6-辛基苯並[b]噻吩1. 9g。收率為52%。 38 323286 201219382PdCI2(dppf) THF n-CeH^^^S7 H2 〇In a 10OmL flask in which the gas in the flask was replaced with IL gas, 6-bromobenzo[b]° thiophene (4. Og, 19 mmol), octylboronic acid was added. (4. 5g, 28mmol), [1, Γ-bis(diphenylphosphino)ferrocene]palladium dichloride (PbCMdppf)) (0. 10g, 0.19mmol) and tetrahydrofuran (120mL) And the aqueous solution of the aqueous solution (2.3 M, 24 mL) was added dropwise while heating under reflux. After the completion of the dropwise addition, the mixture was heated under reflux for 13 hours. The reaction solution was concentrated, terpene and water were added, and a toluene solution was extracted. The toluene solution was concentrated. The 9-octylbenzo[b]thiophene was obtained by the use of a ruthenium tube column. The yield was 52%. 38 323286 201219382

Ή-NMR (300MHz, CDCI3) z, 1 H) , 7· 6 8 (s, 1 H) , 7. 2 • 19 (d, J =8. 1Hz, 1 H) , 2. H) , 1. 60-1. 7 0 (m, 2H), 1. 20-] Δ n .Ή-NMR (300MHz, CDCI3) z, 1 H) , 7· 6 8 (s, 1 H) , 7. 2 • 19 (d, J = 8. 1Hz, 1 H) , 2. H) , 1. 60-1. 7 0 (m, 2H), 1. 20-] Δ n .

1 · 4 〇 (m, 1 〇 H ),0. 85 — 0. 94 (m, 3H) (合成例2) (6,6 -—辛基-2, 2’-二(苯並[b]嗟吩)之合成) 1) BuLi Et2〇1 · 4 〇(m, 1 〇H ), 0. 85 — 0. 94 (m, 3H) (Synthesis Example 2) (6,6 --octyl-2, 2'-di(benzo[b]] Synthesis of porphin) 1) BuLi Et2〇

於以氮氣取代燒瓶内氣體之100mL燒瓶内,加入6_辛 基苯並[b]噻吩(1. 9g、7· 6mmol)、乙醚(37mL)。其後,於 燒瓶内滴入丁基鋰(2. 6M、3. 8mL)。滴入結束後,加熱迴流 2小時。將反應溶液冷卻至〇。〇,加入氣化銅、 llmmol),其後,加熱迴流2小時。將反應溶液過濾,且將 過濾物中的有機化合物溶於甲苯(200mL)及四氫呋喃 (50mL),並將所得溶液加入至濾液中。其後,以醋酸水溶 液及水洗淨濾液。將濾液濃縮,且於濃縮液中注入甲醇, 並將所得析出物過濾。而得到6,6,_二辛基_2,2,_二(苯並 [b]噻吩)1. lg。收率為58%。To a 100 mL flask in which the gas in the flask was replaced with nitrogen, 6-octylbenzo[b]thiophene (1.9 g, 7.6 mmol) and diethyl ether (37 mL) were added. After that, butyllithium (2.6 M, 3.8 mL) was added dropwise to the flask. After the completion of the dropwise addition, the mixture was heated under reflux for 2 hours. The reaction solution was cooled to hydrazine.气, added vaporized copper, llmmol), and then heated to reflux for 2 hours. The reaction solution was filtered, and the organic compound in the filtrate was dissolved in toluene (200mL) and tetrahydrofuran (50mL), and the obtained solution was added to the filtrate. Thereafter, the filtrate was washed with an aqueous acetic acid solution and water. The filtrate was concentrated, and methanol was poured into the concentrate, and the resulting precipitate was filtered. And lg, 6,6, _dioctyl 2,2,_bis(benzo[b]thiophene) 1. lg. The yield was 58%.

I 1H-NMR (300MHz, CDCI3) 57. 66 (d, J=8. 4H 2H),7. 44 (s, 2H) , 7. 1 8 (d 2. 72 (t,J = 7. 7Hz. 4H),1 . z, 2H), 7. 60 (s, 2H) ,J = 8. 4 H z, 2H) , 2. _ 6 0- 1. 7 0 (m, 4 H) , i . 5-0. 9 4 (m, 6 H) 39 323286 201219382 (合成例3) (3, 3’ -二漠-6, 6’ -二辛基-2, 2’ -二(苯並[b]嗟吩)之合成)I 1H-NMR (300MHz, CDCI3) 57. 66 (d, J=8. 4H 2H), 7. 44 (s, 2H), 7. 1 8 (d 2. 72 (t, J = 7. 7Hz. 4H),1 . z, 2H), 7. 60 (s, 2H) , J = 8. 4 H z, 2H) , 2. _ 6 0- 1. 7 0 (m, 4 H) , i . 5 -0. 9 4 (m, 6 H) 39 323286 201219382 (Synthesis Example 3) (3, 3' - Erqian-6, 6'-dioctyl-2, 2'-di(benzo[b]pyrene Synthesis of pheno)

於100mL燒瓶内,加入6, 6’ -二辛基-2,2’ -二(苯並[b] 〇塞吩)(1. Og、2. Ommol)及氣仿(20mL)。其後於燒瓶内滴入 溴(0. 68g、4. 3mmol)。其後於室溫(25°C )擾拌20分鐘。於 反應溶液中加入氣仿與硫代硫酸鈉水溶液並萃取有機層, 將有機層以水洗淨2次,其後濃縮有機層。使用矽膠管柱 將濃縮之有機層進行精製。而得到3, 3’-二溴-6, 6’-二辛 基-2,2’-二(苯並[1)]噻吩)0.7{^。收率為53%。Into a 100 mL flask, 6,6'-dioctyl-2,2'-bis(benzo[b]decanophene) (1.0 g, 2.0 mmol) and gas (20 mL) were added. Thereafter, bromine (0.68 g, 4.3 mmol) was added dropwise to the flask. Thereafter, it was stirred at room temperature (25 ° C) for 20 minutes. An aqueous solution of gas and sodium thiosulfate was added to the reaction solution, and the organic layer was extracted. The organic layer was washed twice with water, and then the organic layer was concentrated. The concentrated organic layer was refined using a ruthenium tube column. Thus, 3,3'-dibromo-6,6'-dioctyl-2,2'-bis(benzo[1)]thiophene) 0.7 was obtained. The yield was 53%.

1 H-NMR (3 Ο OMH z, CDC I 3) 5 7. 7 9 (d,J =8. 1 Η ζ, 2Η) , 7. 63 (s, 2Η) , 7. 33 (d, J = 8. 1 Hz, 2 Η ),2. 7 7 (t, J=7. 7 Hz, 4 H) , 1. 6 0-1. 7 0 (m, 4 H),1 . 20-1. 40 (m, 20H), O. 8 5-0. 94 (m, 6H ) (實施例4) (2, 7-二辛基噻吩並[3, 2-b:4, 5-b’ ]雙苯並[b]噻吩之合 成)1 H-NMR (3 Ο OMH z, CDC I 3) 5 7. 7 9 (d, J = 8. 1 Η ζ, 2Η), 7. 63 (s, 2Η), 7. 33 (d, J = 8. 1 Hz, 2 Η ), 2. 7 7 (t, J=7. 7 Hz, 4 H) , 1. 6 0-1. 7 0 (m, 4 H), 1. 20-1. 40 (m, 20H), O. 8 5-0. 94 (m, 6H) (Example 4) (2,7-dioctylthieno[3,2-b:4, 5-b']bisbenzene And [b] synthesis of thiophene)

Pd2(dba)3 [PfBuH][B'F4]Pd2(dba)3 [PfBuH][B'F4]

n-C$H-j7 (1-12) Γ1-〇8Ηΐ7n-C$H-j7 (1-12) Γ1-〇8Ηΐ7

n-CgH^ (3-7)n-CgH^ (3-7)

Na2S · 9H2〇 K2CO3Na2S · 9H2〇 K2CO3

NMP 於以氮氣取代燒瓶内氣體之lOOmL燒瓶内,加入3, 3’ -二演-6, 6’ -二辛基-2, 2’ -二(苯並[b]嘆吩)(0. 70g、 40 323286 201219382 1. lmmol)、硫化納九水合物(〇 25g、1. lmmol)、碳酸卸 (0. 60g、4. 3mmol)、Pd2(dba)3(25mg)、三(第三丁基)鱗四 . 氟删酸鹽(63mg)及1-甲基-2-〇比洛烧酮(50mL),在11 〇〇c加 熱撥拌3小時。其後,加入pd2(dba)3(25mg)及三(第三丁 基)鱗四氟硼酸鹽(63mg),復在130t加熱攪拌10小時。 其後’將反應溶液注入至曱醇,並過濾所得析出物。使用 矽膠管柱進行析出物的精製,並使用曱苯及2-丙醇進行再 結晶,而得到2,7-二辛基噻吩並[3,2-13:4,5-13,]雙苯並[13] 噻吩300mg。收率為53%。NMP was added to a 100 mL flask in which the gas in the flask was replaced with nitrogen, and 3,3'-di-n-6,6'-dioctyl-2,2'-di(benzo[b]sinter) was added (0. 70 g). , 40 323286 201219382 1. lmmol), sodium sulfide hexahydrate (〇 25g, 1. lmmol), carbonic acid unloading (0. 60g, 4.3mmol), Pd2 (dba) 3 (25mg), three (third butyl ) Scale IV. Fluoride acid salt (63 mg) and 1-methyl-2-indole pirone (50 mL) were mixed and heated at 11 ° C for 3 hours. Thereafter, pd2(dba)3 (25 mg) and tris(t-butyl) scallop tetrafluoroborate (63 mg) were added, and the mixture was stirred under heating at 130 t for 10 hours. Thereafter, the reaction solution was injected into decyl alcohol, and the resulting precipitate was filtered. The precipitate was purified using a ruthenium tube column and recrystallized using toluene and 2-propanol to obtain 2,7-dioctylthieno[3,2-13:4,5-13,]bisbenzene. And [13] thiophene 300mg. The yield was 53%.

'H-NMR (300MHz, CDCI3) 8 7. 77 (d, J=7. 8H z, 2H) , 7. 6 9 (s, 2 H) , 7. 2 7 (d, J = 7. 8Hz, 2 H ),2. 7 5 (t , J =7. 7 H z, 4 Η) , 1 . 6 5- 1. 7 5 (m, 4 H),1 . 2 0- 1 4 0 (m,2 Ο H) , 0· 8 5-0. 94 (m,6 H ) (比較例1) (嗟吩並[3,2-1):4,5-13,]雙苯並[13]噻吩之合成)'H-NMR (300MHz, CDCI3) 8 7. 77 (d, J=7. 8H z, 2H) , 7. 6 9 (s, 2 H) , 7. 2 7 (d, J = 7. 8Hz, 2 H ), 2. 7 5 (t , J = 7. 7 H z, 4 Η) , 1. 6 5- 1. 7 5 (m, 4 H), 1. 2 0- 1 4 0 (m, 2 Ο H) , 0· 8 5-0. 94 (m, 6 H ) (Comparative Example 1) (嗟 并 [3, 2-1): 4, 5-13,] bisbenzo[13] thiophene Synthesis)

Br BrBr Br

Na2S ·9H20 NMP (1·11) (3-8) 於以氮氣取代燒瓶内氣體之l〇〇mL燒瓶内,加入3, 3,-一&gt;臭-2, 2 -二(笨並[b]嗟吩)(〇. l〇g、〇. 24mmol)、硫化納 九水合物(0.056g、0.24mmol)及1-甲基-2-0比11 各烧酮 (10mL) ’在19〇°C加熱攪拌6小時。本反應不使用過渡金 屬錯合物而進行。 以HPLC分析反應液,求得面積百分比,化合物(3-8) 41 323286 201219382 之面積為33%、化合物(1-11)之面積為41%。 (比較例2) (°塞吩並[3, 2-b:4, 5-b’ ]雙苯並[b]e塞吩之合成)Na2S ·9H20 NMP (1·11) (3-8) In a l〇〇mL flask in which the gas in the flask was replaced with nitrogen, 3, 3, -1 odor-2, 2 - 2 (stupid [b] ] 嗟 () 〇. l〇g, 〇. 24mmol), sodium sulphide sulphate (0.056g, 0.24mmol) and 1-methyl-2-0 to 11 ketone (10mL) C was heated and stirred for 6 hours. This reaction was carried out without using a transition metal complex. The reaction liquid was analyzed by HPLC to obtain an area percentage, and the area of the compound (3-8) 41 323286 201219382 was 33%, and the area of the compound (1-11) was 41%. (Comparative Example 2) (Synthesis of epeno[3,2-b:4,5-b'] bisbenzo[b]e phenophene)

Br BrBr Br

Et20Et20

BuLi (PhS〇2)2SBuLi (PhS〇2) 2S

(3-8) 於乙醚(15mL)中加入3, 3’ -二溴-2, 2’ -二(苯並[b]噻 吩)(0. 50g、1. 2mmol)並攪拌,且冷卻至-78°C。於所得溶 液中加入丁基鋰之2. 8M己烷溶液(0. 98mL、2. 7匪〇1)。其 後,保持在-78°C攪拌1小時,並加入雙(苯磺醯基)硫醚 (0. 56g、1. 8mmol)。保持在-78°C攪拌1小時。其後,使反 應液至室溫(25°C),並加入氣化銨水溶液。加入氯仿並萃 取有機層。以氣化銨水溶液洗淨有機層之氯仿溶液後,使 用硫酸鎂乾燥後濃縮。將濃縮之溶液注入至曱苯與己烷混 合溶液中使其再沉澱,並使用熱氣仿使所生成之沉澱再結 晶,而得到°塞吩並[3,2-1):4,5-13’]雙苯並[13]°塞吩21111忌。 收率為6%。 【圖式簡單說明】 無 【主要元件符號說明】 無 42 323286(3-8) 3,3'-Dibromo-2,2'-bis(benzo[b]thiophene) (0.50 g, 1.2 mmol) was added to diethyl ether (15 mL) and stirred and cooled to - 78 ° C. The butyl lithium solution (0.88 mL, 2.7 匪〇1) was added to the solution. Thereafter, the mixture was stirred at -78 ° C for 1 hour, and bis(phenylsulfonyl) sulfide (0.56 g, 1.8 mmol) was added. Stir at -78 ° C for 1 hour. Thereafter, the reaction solution was allowed to reach room temperature (25 ° C), and an aqueous solution of vaporized ammonium was added. Chloroform was added and the organic layer was extracted. The organic layer of chloroform solution was washed with a vaporized aqueous ammonium chloride solution, dried over magnesium sulfate and concentrated. The concentrated solution was poured into a mixed solution of toluene and hexane to reprecipitate, and the resulting precipitate was recrystallized using hot air to obtain °Septene [3, 2-1): 4, 5-13 '] bisbenzo[13] ° phenotype 21111 bogey. The yield was 6%. [Simple description of the diagram] None [Key component symbol description] None 42 323286

Claims (1)

201219382 七、申請專利範圍: 1. 一種式(3)所表示之化合物的製造方法,其包括: 於過渡金屬錯合物存在下,使式(1)所表示之化合 物與式(2)所表示之化合物反應之步驟:201219382 VII. Patent Application Range: 1. A method for producing a compound represented by the formula (3), which comprises: expressing a compound represented by the formula (1) and the formula (2) in the presence of a transition metal complex The steps of the compound reaction: (式中’ A環及β環各自獨立表示芳香族環;γ表示第 15族元素或第16族元素;ζ各自獨立表示氫原子、境 基、芳基或雜芳基;m表示〇或1;γ為第15族元素時, m為1,Υ為第16族元素時,m為0),(wherein the 'A ring and the β ring each independently represent an aromatic ring; γ represents a Group 15 element or a Group 16 element; ζ each independently represents a hydrogen atom, a aryl group, an aryl group or a heteroaryl group; m represents 〇 or 1 When γ is a group 15 element, m is 1, and when Υ is a group 16 element, m is 0), (式中,A環及B環係與前述相同意義;X1及X2各自獨 立表示卤素原子、烷基磺酸酯基(alkyl suifonate group)或芳基磺酸酯基), M1M2Y(Z)m (2) (式中’ Μ1表示鹼金屬原子或鹵化鎂基;Μ2表示鹼金屬原 子、鹵化鎮基或氫原子;Υ、Ζ及m係與前述相同意義)。 2.如申請專利範圍第1項所述之製造方法,其中,前述式 (1)所表示之化合物係式(1A)所表示之化合物,前述式 (3)所表示之化合物係式(3A)所表示之化合物, 1 323286 201219382(wherein the A ring and the B ring system have the same meanings as defined above; X1 and X2 each independently represent a halogen atom, an alkyl suifonate group or an aryl sulfonate group), M1M2Y(Z)m ( 2) (In the formula, Μ1 represents an alkali metal atom or a magnesium halide group; Μ2 represents an alkali metal atom, a halogenated ity group or a hydrogen atom; Υ, Ζ and m are the same meanings as described above). 2. The production method according to the first aspect of the invention, wherein the compound represented by the formula (1) is a compound represented by the formula (1A), and the compound represented by the formula (3) is a formula (3A). Compound represented, 1 323286 201219382 (式中’R1各自獨立表示院基、烧氧基、院硫基、芳基、 芳氧基、芳硫基、烯基、炔基、胺基、取代胺基、矽 取代矽基、i素原子、醯基、醯氧基、醯胺基、雜芳^、 缓基、取代絲、硝基或氰基;n各自獨立表示〇至2 之整數;η為2時,不拘於R1之前述定義,相鄰接之 R可相互鍵結,而與各別之RI所鍵結之碳原子共同形 成環狀構造;E各自獨立表示-〇—、-S-、或-N(R3)-. R3各自獨立表示烷基、芳基、雜芳基;χ1&amp; χ2係與前述 相同意義),(wherein 'R1 each independently denotes a group, an alkoxy group, a thiol group, an aryl group, an aryloxy group, an arylthio group, an alkenyl group, an alkynyl group, an amine group, a substituted amine group, a fluorenyl substituted fluorenyl group, and an auxin group. Atom, fluorenyl, decyloxy, decylamino, heteroaryl, sulfhydryl, substituted, nitro or cyano; n each independently represents an integer from 〇 to 2; when η is 2, the above definition is not limited to R1 The adjacent Rs may be bonded to each other, and together with the carbon atoms bonded by the respective RIs form a ring structure; E each independently represents -〇-, -S-, or -N(R3)-. R3 Each independently represents an alkyl group, an aryl group, or a heteroaryl group; the χ1&amp; χ2 system has the same meaning as described above), (式中’1^、11、¥、2、111及£係與前述相同意義)。 3.如申請專利範圍第1項或第2項所述之製造方法,其 中’前述式(1)所表示之化合物係式(1Β)所表示之化合 物’前述式(3)所表示之化合物係式(3Β)所表示之化合 物,(wherein '1^, 11, ¥, 2, 111, and £ are in the same meaning as described above). 3. The production method according to the first aspect or the second aspect of the invention, wherein the compound represented by the formula (1) is a compound represented by the formula (3), and the compound represented by the above formula (3) a compound represented by the formula (3Β), 2 323286 201219382 • (式中,p各自獨立表示〇至4之整數;R2各自獨立表 不烧基、烧氧基、炫硫基、芳基、芳氣基、芳硫基、稀 基、炔基、胺基、取代胺基、梦基、取代♦基、齒素原 子、醯基、醯氧基、醯胺基、雜芳基、羧基、取代羧基、 魏錢基;苯環帽接之碳軒分㈣有r2所表示 的基2時,不拘於R之前述定義,鄰接之碳原子所具有 之R可相互鍵結,而與前述鄰接之碳原子共同形成環 狀構造;E各自獨立表示-〇_、_s_、_hn(r3)_ ; R各自獨立表示院基、芳基、雜芳基;χ1&amp;χ2係與前述 相同意義;),2 323286 201219382 • (wherein, p each independently represents an integer of 〇 to 4; R 2 each independently represents an alkyl group, an alkoxy group, a thiol group, an aryl group, an aromatic group, an arylthio group, a dilute group, an alkynyl group , amine group, substituted amine group, dream group, substituted group, dentate atom, fluorenyl group, decyloxy group, decylamino group, heteroaryl group, carboxyl group, substituted carboxyl group, Wei Qianji; benzene ring capped carbon porch When subgroup (4) has a radical 2 represented by r2, R does not depend on the above definition, and R of adjacent carbon atoms may be bonded to each other, and together with the adjacent carbon atoms form a cyclic structure; E each independently represents -〇 _, _s_, _hn(r3)_; R each independently represents a decentral, aryl, heteroaryl; χ1&amp;χ2 is of the same meaning as previously described;), (3Β) (式中,R2、ρ、Υ、Ζ、m及Ε係與前述相同意義)。 4·如申請專利範圍第1項至第3項中任一項所述之製造方 法,其中,相對於前述式(1)所表示之化合物丨莫耳, 前述式(2)所表示化合物之使用量為丨至1〇莫耳。 5’如申睛專利範圍第1項至第4項中任一項所述之製造方 法,其中,X1及X2各自獨立表示氣原子、溴原子或碘 原子。 6. —種式(3)所表示之化合物的製造方法’其包括: 於過渡金屬錯合物存在下,使式(4)所表示之化合 物進行分子内環化反應之步驟, 323286 3 (2), 201219382(3Β) (wherein R2, ρ, Υ, Ζ, m, and Ε are in the same meaning as described above). The production method according to any one of the above-mentioned formula (1), wherein the compound represented by the above formula (2) is used with respect to the compound represented by the above formula (1). The amount is 丨 to 1〇莫耳. The manufacturing method according to any one of the items 1 to 4, wherein X1 and X2 each independently represent a gas atom, a bromine atom or an iodine atom. 6. A method for producing a compound represented by the formula (3), which comprises the step of subjecting a compound represented by the formula (4) to an intramolecular cyclization reaction in the presence of a transition metal complex, 323286 3 (2) ), 201219382 ΜΑ壤及B環各自獨立表示芳香族環;γ表干第 15族元素或第16麵素 广’γ^第 基、芳基或雜芳A.… 表示氫原子、烧 &amp;次雜方基,m表不0或1;Y為第15族元素時, m為1,Υ為第16族元素時,^為〇),The loquat and the B ring each independently represent an aromatic ring; the gamma surface is a group 15 element or a hexadecane broadly 'γ^diyl, aryl or heteroaryl A.... represents a hydrogen atom, a calcined &amp; , m is not 0 or 1; when Y is a group 15 element, m is 1, when Υ is a group 16 element, ^ is 〇), (4) (式中,M3表示典型金屬原子或齒傾基;X2表示齒素 原子、烷基磺酸酯基或芳基磺酸酯基;A環、B環、γ、 Ζ及m係與前述相同意義)。 7.如申請專利範圍第6項所述之製造方法,其中,前述式 (4)所表示之化合物係式(4/〇所表示之化合物,前述式 (3)所表示之化合物係式(3A)所表示之化合物,(4) (wherein M3 represents a typical metal atom or a dentate group; X2 represents a dentate atom, an alkyl sulfonate group or an aryl sulfonate group; and A ring, B ring, γ, Ζ and m are The same meaning as above). 7. The production method according to the sixth aspect of the invention, wherein the compound represented by the formula (4) is a compound represented by the formula (4/〇, and the compound represented by the above formula (3) (3A) ) the compound represented, (式中,R1各自獨立表示烷基、烷氧基、烷硫基、芳基、 芳氧基、芳硫基、烯基、炔基、胺基、取代胺基、矽基、 4 323286 201219382 取代矽基、鹵素原子、醯基、醯氧基、醯胺基、雜芳基、 羧基、取代羧基、硝基或氰基;η各自獨立表示0至2 之整數;η為2時,不拘於R1之前述定義,相鄰接之 R1可相互鍵結,而與各別之R1所鍵結之碳原子共同形 成環狀構造;Ε各自獨立表示-0-、-S-、-Se-、或 -N(R3)-,R3各自獨立表示烷基、芳基、雜芳基;Y、M3、 Z、m及X2係與前述相同意義),(wherein R1 each independently represents alkyl, alkoxy, alkylthio, aryl, aryloxy, arylthio, alkenyl, alkynyl, amine, substituted amine, fluorenyl, 4 323286 201219382 substituted a mercapto group, a halogen atom, a fluorenyl group, a decyloxy group, a decylamino group, a heteroaryl group, a carboxyl group, a substituted carboxyl group, a nitro group or a cyano group; η each independently represents an integer of 0 to 2; when η is 2, it is not limited to R1 In the foregoing definition, adjacent R1 may be bonded to each other, and together with the carbon atoms bonded to the respective R1, form a ring structure; Ε each independently represents -0, -S-, -Se-, or - N(R3)-, R3 each independently represents an alkyl group, an aryl group, a heteroaryl group; Y, M3, Z, m and X2 are the same as defined above), (式中,1^、11、丫、2、111及£係與前述相同意義)。 8.如申請專利範圍第6項或第7項所述之製造方法,其 中,前述式(4)所表示之化合物係式(4B)所表示之化合 物,前述式(3)所表示之化合物係式(3B)所表示之化合 物,(wherein, 1^, 11, 丫, 2, 111, and £ are in the same meaning as described above). 8. The production method according to the above formula (4), wherein the compound represented by the formula (4) is a compound represented by the formula (4B), and the compound represented by the formula (3) is a compound of the formula (3). a compound represented by the formula (3B), (式中,P各自獨立表示0至4之整數;R2各自獨立表 示烷基、烷氧基、烷硫基、芳基、芳氧基、芳硫基、烯 基、炔基、胺基、取代胺基、矽基、取代矽基、鹵素原 子、醯基、酿氧基、醢胺基、雜芳基、叛基、取代叛基、 5 323286 201219382 硝基或氰基;苯射_之碳原子分職有r2所表于 的基時,不拘於R2之前述定義,鄰接之碳原子所具有 之R可相互鍵結,而與前述鄰接之碳原子共同形成環 狀構造;E各自獨立表示_〇,_s_、奋或,3)、· '各自獨立表示絲、芳基、雜芳基;γ、Μ3、ζ、Μ X2係與前述相同意義),(wherein P each independently represents an integer of 0 to 4; and R2 each independently represents an alkyl group, an alkoxy group, an alkylthio group, an aryl group, an aryloxy group, an arylthio group, an alkenyl group, an alkynyl group, an amine group, a substituent Amine, fluorenyl, substituted fluorenyl, halogen atom, fluorenyl, aryloxy, decylamino, heteroaryl, thiol, substituted thiol, 5 323286 201219382 nitro or cyano; benzene When the sub-representation has the basis of r2, regardless of the above definition of R2, R of adjacent carbon atoms may be bonded to each other, and together with the adjacent carbon atoms form a ring structure; E each independently represents _〇 , _s_, 奋 or, 3), · 'each independently represents silk, aryl, heteroaryl; γ, Μ3, ζ, Μ X2 are the same meaning as above), ,K、p、Y、Z、m及Ε係與前述相同意義)。 9·如申請專利範圍第6項至第8項中心項所述之製造方 法,其中,前述典型金屬原子係鹼金屬原子。 10.如申請專利範圍第6項至第9項中任—項所述之製造方 法,其中,X2係氣原子、溴原子或碘原子。 i.如申叫專利範圍第1項至第1〇項中任一項所述之製造 方法,其中,前述過渡金屬錯合物係含第10族元素之 金屬錯合物β 12·如申請專利範圍第11項所述之製造方法,其中,前述 過渡金屬錯合物係鈀錯合物。 13·如申請專利範圍第12項所述之製造方法,其中,前述 過渡金屬錯合物係具有至少一個膦配體之鈀錯合物。 14·如申請專利範圍第1項至第13項中任一項所述之製造 方法’其中,γ係第16族元素。 6 323286 201219382 15. 如申請專利範園第14項所述之製造方法,其令,γ係 硫。 16. 如申請專利範圍第2項至第5項、第7項至第15項中 任一項所述之製造方法’其中’ Ε各自獨立表示_〇_、 或-Se-。 17. 如申請專利範圍第16項所述之製造方法,其中,兩個 E皆係-S-。 18. 如申請專利範圍第1項至第17項中任一項所述之製造 方法’其中,過渡金屬錯合物係逐次添加。 19· 一種式(4)所表示之化合物, GMS (4) (式中,M3表示典型金屬原子或齒化鎂基;a環及8環 各自獨立表示芳香族環;χ2表示鹵素原子、烷基磺酸酯 基或芳基續酸醋基;γ表示第15族元素或第16族元 素;Ζ各自獨立表示氫原子、縣、綠或雜芳基;m 表不0或1;Y為第15族元素時,41;γ為第16族 元素時,m為〇)。 一申明專利lull第19項所述之化合物係式⑽) 不之化合物, 323286 7 201219382, K, p, Y, Z, m and lanthanide have the same meaning as described above). 9. The manufacturing method according to the sixth aspect of the invention, wherein the typical metal atom is an alkali metal atom. 10. The method according to any one of claims 6 to 9, wherein X2 is a gas atom, a bromine atom or an iodine atom. The manufacturing method according to any one of the preceding claims, wherein the transition metal complex is a metal complex containing a Group 10 element β 12 · as claimed in the patent application The method according to the item 11, wherein the transition metal complex is a palladium complex. The production method according to claim 12, wherein the transition metal complex is a palladium complex having at least one phosphine ligand. The manufacturing method as described in any one of claims 1 to 13, wherein the γ is a Group 16 element. 6 323286 201219382 15. The manufacturing method described in claim 14 of the patent application, which is gamma-based sulfur. 16. The manufacturing method as described in any one of claims 2 to 5, wherein the items are independently represented by _〇_, or -Se-. 17. The manufacturing method of claim 16, wherein both E are -S-. 18. The method of manufacture according to any one of the preceding claims, wherein the transition metal complex is added sequentially. A compound represented by the formula (4), GMS (4) (wherein M3 represents a typical metal atom or a dentate magnesium group; the a ring and the 8 ring each independently represent an aromatic ring; and χ 2 represents a halogen atom, an alkyl group; Sulfonate or aryl acid vine; γ represents a Group 15 element or a Group 16 element; Ζ each independently represents a hydrogen atom, a county, a green or a heteroaryl group; m represents 0 or 1; Y is the 15th For a group element, 41; when γ is a group 16 element, m is 〇). A compound of the formula (10) described in the patent Lull No. 19, not a compound, 323286 7 201219382 (4B) (式中,P各自獨立表示〇至4之整數;R2各自獨立表 示烷基、烷氧基、烷硫基、芳基、芳氧基、芳硫基、烯 基、炔基、胺基、取代胺基、矽基、取代矽基、卣素原 子、醯基、醯氧基、醯胺基、雜芳基、羧基、取代羧基、 硝基或氰基;苯環中鄰接之碳原子分別具有R2所表示 的基時,不拘於R2之前述定義,鄰接之碳原子所具有 之R2可相互鍵結,而與前述鄰接之碳原子共同形成環 狀構造;E各自獨立表示-〇—、、_Se_4_N(R3)_ ; \各自獨立表示烷基、芳基、雜芳基;Y、M3、z、m&amp; X2係與前述相同意義)。 21. 一種式(5)所表示之化合物,(4B) (wherein P each independently represents an integer of 〇 to 4; and R2 each independently represents an alkyl group, an alkoxy group, an alkylthio group, an aryl group, an aryloxy group, an arylthio group, an alkenyl group, an alkynyl group, an amine Base, substituted amine group, fluorenyl group, substituted fluorenyl group, halogen atom, fluorenyl group, decyloxy group, decylamino group, heteroaryl group, carboxyl group, substituted carboxyl group, nitro group or cyano group; adjacent carbon atom in benzene ring When R12 has a group represented by R2, R2 of adjacent carbon atoms may be bonded to each other, and carbon atoms together with the adjacent carbon atoms form a ring structure; E each independently represents -〇, , _Se_4_N(R3)_; \ each independently represents an alkyl group, an aryl group, a heteroaryl group; Y, M3, z, m&amp; X2 are the same as defined above). 21. A compound represented by the formula (5), 323286 8 201219382 22.如申請專利範圍第21項所述之化合物,係式(5B)所表 示之化合物,323286 8 201219382 22. A compound as described in claim 21, which is a compound represented by the formula (5B), (式中,P各自獨立表示0至4之整數;R2各自獨立表 示烷基、烷氧基、烷硫基、芳基、芳氧基、芳硫基、烯 基、炔基、胺基、取代胺基、矽基、取代矽基、_素原 子、醯基、醯氧基、醯胺基、雜芳基、羧基、取代羧基、 硝基或氰基;苯環中鄰接之碳原子分別具有R2所表示 的基時,不拘於R2之前述定義,鄰接之碳原子所具有 之R2可相互鍵結,而與前述鄰接之碳原子共同形成環 狀構造;E各自獨立表不_0_、-S_、_Se-或-N(R3)-; R3各自獨立表示烷基、芳基、雜芳基;Y、Z、m及X2 係與前述相同意義)。 9 323286 201219382 四、指定代表圖: - (一)本案指定代表圖為:第()圖。(本案無圖式) (二)本代表圖之元件符號簡單說明:(無) 五、本案若有化學式時,請揭示最能顯示發明特徵的化學式: 本案無代表化學式 3 323286(wherein P each independently represents an integer of 0 to 4; and R2 each independently represents an alkyl group, an alkoxy group, an alkylthio group, an aryl group, an aryloxy group, an arylthio group, an alkenyl group, an alkynyl group, an amine group, a substituent An amine group, a fluorenyl group, a substituted fluorenyl group, a hydrazine group, a fluorenyl group, a decyloxy group, a decylamino group, a heteroaryl group, a carboxyl group, a substituted carboxy group, a nitro group or a cyano group; the adjacent carbon atoms in the benzene ring respectively have R2 The base time indicated is not limited to the above definition of R2, and R2 of adjacent carbon atoms may be bonded to each other, and together with the adjacent carbon atoms form a ring structure; E each independently represents _0_, -S_, _Se- or -N(R3)-; R3 each independently represents an alkyl group, an aryl group, a heteroaryl group; Y, Z, m and X2 are the same meanings as described above). 9 323286 201219382 IV. Designation of representative drawings: - (1) The representative representative of the case is: (). (There is no picture in this case) (2) Brief description of the symbol of the representative figure: (none) 5. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention: This case does not represent the chemical formula 3 323286
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