201213954 六、發明說明： 【發明所屬之技術領域】 本發明，係有關於採用橫電場驅動方式之液晶顯示裝 置及其製造方法，以及液晶顯示裝置用電極基板。 【先前技術】 從先前起，便提案有各種之在液晶顯示裝置中的驅動 方式，但是，近年來，係提案有：對於基板而使液晶分子 在水平配向狀態下來做切換之橫向電場效應（IPS )方式 模式或者是邊緣電場效應（FFS)模式之類的橫電場驅動 方式，並且被實用化。 在採用此種橫電場驅動方式之液晶顯示裝置中，係在 被形成有薄膜電晶體（TFT )等之驅動元件的基底基板上 ，形成由丙烯酸樹脂所成之有機絕緣膜而將其之表面平坦 化，並在此有機絕緣膜上形成共通電極或像素電極等。作 爲具體性之構造，係存在有：在被平坦化後的有機絕緣膜 上，形成特定形狀之共通電極，並將此共通電極之表面·， 藉由例如由氮化矽等所成之無機絕緣膜來作覆蓋，再於此 無機絕緣膜上形成像素電極者。 〔先前技術文獻〕 〔專利文獻〕 〔專利文獻1〕日本特開2010-72527號公報 201213954 【發明內容】 〔發明所欲解決之課題〕 當如此這般而將被形成在有機絕緣膜（有機保護膜） 上的共通電極作覆蓋而形成無機絕緣膜的情況時，無機絕 緣膜，係成爲從共通電極上而涵蓋有機保護膜之表面地來 連續性地形成。而，在此種構成中，會有被形成在有機保 護膜之表面上的無機絕緣膜產生剝離的情況。關於其原因 ，係得知了，是因爲例如在形成由氮化矽所成之無機絕緣 膜時，在此無機絕緣膜之有機保護膜側的表面上形成有氧 化膜之故。亦即是，係得知了 ：會由於無機絕緣膜和被形 成於其表面上之氧化膜間的應力差，而在此些之無機絕緣 膜和氧化膜間的界面處產生剝離。 而，本案發明者，在反覆進行了努力硏究之後，其結 果，係發現了：此氧化膜，係爲由於從有機保護膜所放出 之氣體成分的影響所形成者。 本發明，係爲有鑑於此種事態而進行者，其目的，係 在於提供一種能夠對於被形成在有機保護膜之表面上的無 機絕緣膜之剝離作抑制的液晶顯示裝置及其製造方法，以 及液晶顯不裝置用電極基板。 〔用以解決課題之手段〕 對上述課題作解決的本發明之第1形態，係爲一種液 晶顯示裝置，係具備有挾持著液晶層而作對向配置之一對 的基板，該液晶顯示裝置，其特徵爲：前述一對的基板中 -6 - 201213954 之其中一方的基板，係具備有：被設置在前述液晶層側之 面的像素區域處之薄膜電晶體；和至少在其之上層處包含 有由丙烯酸系樹脂所成之有機保護膜，並覆蓋前述薄膜電 晶體地被作設置之絕緣保護膜；和被形成在該有機保護膜 上之共通電極；和由無機絕緣材料所成，並覆蓋前述共通 電極地被作設置之無機絕緣膜；和被形成在前述無機絕緣 膜上之像素電極，在前述有機保護膜之表面，係被設置有 對於從該有機保護膜而來之氣體成分的放出作防止之阻障 層，前述無機絕緣膜，係隔著前述阻障層而被形成在前述 有機保護膜之表面上。 本發明之第2形態，係在第1形態之液晶顯示裝置中， 具備有下述特徵：亦即是，前述阻障層，係至少包含有由 矽化合物所成之層。 本發明之第3形態，係在第2形態之液晶顯示裝置中， 具備有下述特徵：亦即是，前述矽化合物，係爲Si〇x、 SiON或者是SiCN的其中一者。 本發明之第4形態，係在第1〜3形態中之任一形態所 記載之液晶顯示裝置中，具備有下述特徵：亦即是，前述 * 阻障層，係至少包含有藉由對於前述有機保護膜之表面進 行電漿改質處理所形成的改質層。 本發明之第5形態，係在第1〜4形態之其中一種形態 的液晶顯示裝置中，具備有下述特徵：亦即是，前述阻障 層’係至少包含有由與前述有機保護膜相異之樹脂材料所 成之層。 201213954 本發明之第6形態，係爲一種液晶顯示裝置之製造方 法，該液晶顯示裝置，係具備有挾持著液晶層而作對向配 置之一對的基板，並且，前述一對的基板中之其中一方的 基板，係具備有：被設置在前述液晶層側之面的像素區域 處之薄膜電晶體；和至少在其之上層處包含有由丙烯酸系 樹脂所成之有機保護膜，並覆蓋前述薄膜電晶體地被作設 置之絕緣保護膜；和被形成在該有機保護膜上之共通電極 :和由無機絕緣材料所成，並覆蓋前述共通電極地被作設 置之無機絕緣膜；和被形成在前述無機絕緣膜上之像素電 極，該液晶顯示裝置之製造方法，其特徵爲，具備有：在 覆蓋被形成於前述基板上之前述薄膜電晶體地而形成了前 述有機保護膜之後，在該有機保護膜表面上形成對於從前 述有機保護膜而來之氣體成分的放出作防止之阻障層的工 程；和覆蓋被設置在前述有機保護膜上之前述共通電極地 而形成前述無機絕緣膜的工程：和在前述無機絕緣膜上形 成前述像素電極的工程》 本發明之第7形態，係爲一種液晶顯示裝置用電極基 板，其係被與液晶層作對向配置，並具備有用以在前述液[Technical Field] The present invention relates to a liquid crystal display device using a horizontal electric field driving method, a method of manufacturing the same, and an electrode substrate for a liquid crystal display device. [Prior Art] Various driving methods for liquid crystal display devices have been proposed from the past, but in recent years, there has been proposed a lateral electric field effect (IPS) in which liquid crystal molecules are switched in a horizontal alignment state with respect to a substrate. The mode mode is a horizontal electric field driving method such as a fringe field effect (FFS) mode, and is put to practical use. In a liquid crystal display device using such a lateral electric field driving method, an organic insulating film made of an acrylic resin is formed on a base substrate on which a driving element such as a thin film transistor (TFT) is formed, and the surface thereof is flattened. A common electrode or a pixel electrode or the like is formed on the organic insulating film. As a specific structure, a common electrode having a specific shape is formed on the flattened organic insulating film, and the surface of the common electrode is made of inorganic insulating, for example, by tantalum nitride or the like. The film is covered to form a pixel electrode on the inorganic insulating film. [PRIOR ART DOCUMENT] [Patent Document 1] [Patent Document 1] JP-A-2010-72527, JP-A-201213954 [Problem to be Solved by the Invention] When this is the case, an organic insulating film (organic protection) will be formed. When the common electrode on the film is covered to form an inorganic insulating film, the inorganic insulating film is continuously formed from the common electrode and covers the surface of the organic protective film. On the other hand, in such a configuration, the inorganic insulating film formed on the surface of the organic protective film may be peeled off. The reason for this is that, for example, when an inorganic insulating film made of tantalum nitride is formed, an oxide film is formed on the surface of the inorganic protective film on the side of the organic protective film. That is, it is known that peeling occurs at the interface between the inorganic insulating film and the oxide film due to the stress difference between the inorganic insulating film and the oxide film formed on the surface thereof. On the other hand, the inventors of the present invention have found that the oxide film is formed by the influence of the gas component released from the organic protective film. The present invention has been made in view of such a situation, and an object thereof is to provide a liquid crystal display device capable of suppressing peeling of an inorganic insulating film formed on a surface of an organic protective film, and a method of manufacturing the same, and a method of manufacturing the same An electrode substrate for a liquid crystal display device. [Means for Solving the Problem] The first aspect of the present invention to solve the above-mentioned problems is a liquid crystal display device including a substrate in which a liquid crystal layer is sandwiched and arranged in a pair, and the liquid crystal display device is provided. The substrate of one of the pair of substrates -6 - 201213954 is provided with a thin film transistor at a pixel region provided on a surface of the liquid crystal layer side; and at least at an upper layer thereof An organic protective film made of an acrylic resin, and an insulating protective film provided to cover the thin film transistor; and a common electrode formed on the organic protective film; and an inorganic insulating material formed and covered An inorganic insulating film provided as a common electrode; and a pixel electrode formed on the inorganic insulating film, on the surface of the organic protective film, a gas component for discharging from the organic protective film is provided In the barrier layer for prevention, the inorganic insulating film is formed on the surface of the organic protective film via the barrier layer. According to a second aspect of the invention, in the liquid crystal display device of the first aspect, the barrier layer includes at least a layer made of a ruthenium compound. According to a third aspect of the present invention, in the liquid crystal display device of the second aspect, the bismuth compound is one of Si〇x, SiON or SiCN. According to a fourth aspect of the present invention, in the liquid crystal display device of any one of the first to third aspects, the barrier layer includes at least The surface of the organic protective film is subjected to a plasma reforming treatment to form a modified layer. According to a fifth aspect of the present invention, in the liquid crystal display device of the first aspect, the barrier layer is characterized in that the barrier layer includes at least the organic protective film. A layer made of a different resin material. According to a sixth aspect of the present invention, in a liquid crystal display device, the liquid crystal display device includes a substrate in which a pair of liquid crystal layers are disposed to face each other, and wherein the pair of substrates are among the substrates One of the substrates includes a thin film transistor provided at a pixel region on a surface of the liquid crystal layer side; and an organic protective film made of an acrylic resin at least in an upper layer thereof, and covering the film An insulating protective film provided as a transistor; and a common electrode formed on the organic protective film: and an inorganic insulating film formed of an inorganic insulating material and covering the common electrode; and formed on In the method of manufacturing a liquid crystal display device, the pixel electrode of the inorganic insulating film is characterized in that the organic protective film is formed by covering the thin film transistor formed on the substrate, and the organic protective film is formed thereon. a process of forming a barrier layer for preventing release of a gas component from the organic protective film on the surface of the protective film; A process of forming the inorganic insulating film by the cover of the common electrode on the organic protective film and a process of forming the pixel electrode on the inorganic insulating film. A seventh aspect of the present invention is a liquid crystal display device. An electrode substrate which is disposed opposite to the liquid crystal layer and is provided to be used in the liquid
I 晶層處而使電場產生之電極，該液晶顯示裝置用電極基板 ，其特徵爲，具備有：被設置在前述液晶層側之面的像素 區域處之薄膜電晶體；和至少包含有由丙烯酸系樹脂所成 之有機保護膜，並覆蓋前述薄膜電晶體地被作設置之絕緣 保護膜；和被形成在該有機保護膜上之共通電極；和由無 機絕緣材料所成，並覆蓋前述共通電極地被作設置之無機 -8- 201213954 絕緣膜；和被形成在前述無機絕緣膜上之像素電極，在前 述有機保護膜之表面’係被設置有對於從該有機保護膜而 來之氣體成分的放出作防止之阻障層，前述無機絕緣膜， 係隔著前述阻障層而被形成在前述有機保護膜之表面上。 〔發明之效果〕 若依據本發明’則能夠對於被形成在有機保護膜之表 面上的無機絕緣膜之剝離有效地作抑制。故而，係能夠將 液晶顯示裝置之信賴性或耐久性提昇。 【實施方式】 以下，針對本發明之其中一種實施形態，參考圖面而 作說明。 如圖1中所示一般，本發明之液晶顯示裝置I，係具備 有：如同後述一般地被設置有像素電極或薄膜電晶體（ TFT )等之電極基板1、和被與此電極基板1相對向地作配 置並且被形成有彩色濾光片或者是黑矩陣之濾光基板2。 未圖示之液晶層，係經由此些之電極基板1和濾光基板2而 被作挾持。另外，液晶層，係藉由在濾光基板2之周邊部 而被塗布爲環狀的未圖示之密封材，而被作固定，並構成 爲被密封在電極基板1和濾光基板2之間。又，在電極基板 1之外側（與液晶層相反側），係被設置有背光3。又，在 電極基板1和背光3之間，以及濾光基板2之外側（與液晶 層相反側），係分別被設置有偏光板4 ^ 201213954 於此，在電極基板1處，被輸入有閘極訊號之閘極線 1 1，係以特定間隔而被設置有複數根，又，在電極基板1 處，被輸入有源極訊號之源極線1 2，係在與閘極線1 1之延 伸設置方向略正交的方向上被作延伸設置，並且被作複數 根之並排設置。亦即是，各閘極線1 1，係延伸存在於圖1 中之X方向上，並在y方向上相互分離地被作並排設置。又 ，各源極線12，係延伸存在於圖1中之y方向上，並在X方 向上相互分離地被作並排設置。而，藉由此些之閘極線11 和源極線1 2所包圍的略矩形狀之區域，係分別構成像素區 域（顯示像素）。此像素區域，係在電極基板1上以矩陣 狀而作複數配置。又，詳細雖係於後再述，但是，在各像 素區域處，係被設置有作爲開關元件而起作用之薄膜電晶 體（TFT ) Τι·，在此薄膜電晶體Tr處，係被連接有用以在 液晶層處使電場產生之像素電極P。 另外，各閘極線11以及源極線12，係在其中一端處而 超越未圖示之密封材地作延伸存在，並被與未圖示之驅動 1C的各輸出端子作連接。 以下，使用圖2，針對被設置在電極基板1處之各像素 區域的電極構造作詳細說明。如圖2中所示一般，電極基 板1，係具備有由周知之絕緣性基板（例如玻璃基板等） 所成的基底基板21，在此基底基板21之表面上，係被形成 有用以對於從基底基板21所朝向薄膜電晶體Tr之Na (鈉） 或者是K (鉀）等之離子的擴散作抑制之擴散防止層22 ^ 作爲擴散防止層22，例如，係可使用藉由氮化矽層和被形 -10- 201213954 成在氮化矽層上之氧化矽層所構成的層積構造膜。 薄膜電晶體Tr，係被形成在此擴散防止層22上。具體 而言，首先，係在擴散防止層22上，形成例如由多晶矽等 之多結晶半導體所成的半導體層23。在半導體層23之上層 處，係覆蓋半導體層23地而被形成有閘極絕緣膜24。在閘 極絕緣膜24上，係在與半導體層23相對向之位置處而被形 成有閘極電極3 1。閘極電極3 1，係經由上述之閘極線1 1所 構成（參考圖1)。閘極絕緣膜24，係爲了確保此閘極電 極3 1和半導體層2 3之間的絕緣性所設置者。進而，在閘極 電極3 1上，係覆蓋閘極電極3 1地而被形成有層間絕緣膜25 〇 在此層間絕緣膜25上之與半導體層23相對向的區域處 ，係被形成有源極電極32以及汲極電極33»源極電極32, 係經由上述之源極線12所構成（參考圖1)。源極電極32 以及汲極電極3 3，係被埋入至配線孔5 1中。配線孔5 1，係 在圖2中之閘極電極31的兩外側處，貫通層間絕緣膜25以 及閘極絕緣膜24地被設置》被埋入至配線孔51中之源極電 極32以及汲極電極33，係分別被與半導體層23作連接。另 外，雖省略圖示，但是，在半導體層23之挾持閘極電極31 的兩側處，係存在著被摻雜有磷或者是硼之摻雜層，源極 電極32以及汲極電極33，實際上係被與此摻雜層作連接。 亦即是，經由此些之閘極電極3 1、源極電極32以及汲 極電極33還有半導體層23，而構成液晶顯示裝置I中之作 爲各像素之開關元件而起作用的薄膜電晶體Tr。 -11 - 201213954 進而，在構成薄膜電晶體Tr之源極電極32以及汲極電 極33上，係被形成有由無機保護膜26和有機保護膜27所成 之絕緣保護膜28。絕緣保護膜28，係爲用以對於薄膜電晶 體Tr作保護者，無機保護膜26，例如係由氮化矽所成，絕 緣保護膜27，例如係由丙烯酸系樹脂所成。另外，有機保 護膜27，不僅是對於薄膜電晶體Tr作保護，而亦發揮有將 電極基板1之表面平坦化的功能。 在此有機保護膜27上，係被設置著被施加有在全部之 像素區域而爲共通的基準電壓之共通電極41。此共通電極 41，係在有機保護膜27上而被圖案化爲特定之形狀。亦即 是，共通電極41，係並非爲被形成在有機保護膜27之全面 上，而是被設置在有機保護膜27之表面的一部分處。而， 在此共通電極41上，係被設置有身爲無機絕緣膜之電容絕 緣膜42，並進而在電容絕緣膜42上，被設置有例如梳齒狀 之像素電極43 (P)。電容絕緣膜42，係由具備有光透過 性之無機絕緣材料所成，並將共通電極41完全作覆蓋地而 涵蓋有機保護膜27之略全面來作設置。亦即是，電容絕緣 膜42，係從共通電極41上起而一直連續性地被設置至有機 保護膜27處。 另外，在本實施形態中，被像素電極43和共通電極41 所挾持之電容絕緣膜42，係成爲作爲電容器來起作用。藉 由此，係成爲不需要另外設置用以作爲電容器之電極。 此些之共通電極4 1以及像素電極4 3，係經由透明導電 材料所形成。作爲透明導電材料，在本實施形態中，係使 -12- 201213954 用ITO，但是，係並非被限定爲ITO，亦可使用周知之透明 導電膜，例如使用氧化鋅系透明導電膜等。 又，在電容絕緣膜42以及絕緣保護膜28處，係被形成 有將該些作貫通並且使汲極電極33之表面作露出的TFT接 觸孔52。而，像素電極43，係在此TFT接觸孔52中亦被連 續性地形成，並在TFT連接孔52內而與汲極電極33作連接 〇 在此種構成之液晶顯示裝置I中，若是在薄膜電晶體 Tr之閘極電極31處被輸入有閘極訊號，則從源極電極32而 來之資料訊號係透過半導體層23以及汲極電極33而被傳輸 至像素電極處。而後，經由因應於資料訊號而在像素電極 43和共通電極4 1之間所產生的電場（橫電場），來使液晶 分子之配列方向改變。 另外，如同上述一般，用以謀求像素電極43和共通電 極41間之絕緣的電容絕緣膜42，係從共通電極41上起而一 直連續性地被設置至有機保護膜27處。而，在本發明中， 例如，係如圖3中所示一般，在有機保護膜27上，被設置 有用以防止從有機保護膜27而來之氣體成分的放出之阻障 層60。在本實施形態中，係涵蓋有機保護膜27以及共通電 極41之表面而連續性地設置阻障層60，電容絕緣膜42，係 在有機保護膜27上隔著此阻障層60而被作設置。藉由此， 係能夠對於被形成在由丙烯酸樹脂所成之有機保護膜27上 的由氮化矽等所成之電容絕緣膜42的剝離有效地作抑制。 在如同先前技術一般之將電容絕緣膜直接形成在有機 -13- 201213954 保護膜上的構成中，會產生被形成在有機保護膜上之電容 絕緣膜剝離的問題。此係因爲，在形成電容絕緣膜時，由 丙烯酸系樹脂所成之有機保護膜中的例如碳酸中所包含之 氧會析出，而該氧（氣體成分）會與構成電容絕緣膜之矽 起反應，並與電容絕緣膜一體性地而形成氧化矽膜之故。 亦即是，起因於被一體性地形成了的由氮化矽所成之電容 絕緣膜和氧化矽膜之間的應力差，在此些之電容絕緣膜和 氧化矽膜之間的界面處，係會產生剝離。 但是，在本發明之構成中，電容絕緣膜42係隔著阻障 層60而被設置在有機保護膜27之上。藉由此，從有機保護 膜2 7所放出之氣體成分和電容絕緣膜42之間的反應，係被 作抑制，而能夠實質性地對於在電容絕緣膜42之表面上一 體性地形成氧化膜一事作防止。亦即是，藉由在有機保護 膜27上設置阻障層60，係能夠有效的抑制電容絕緣膜42的 剝離。 於此，作爲阻障層60之材料，只要是能夠對於從有機 保護膜27而來之氣體成分的放出作防止者即可，但是，係 有必要身爲能夠在由丙烯酸系樹脂所成的有機保護膜27之 耐熱溫度（250 °C )以下的溫度而形成者。作爲滿足此種 條件之阻障層60的材料，例如，係可列舉出矽化合物，具 體而言，係可適當使用SiOx、SiON或者是SiCN等。又， 此種由矽化合物所成之阻障層6 0，例如係經由C V D法等而 形成。而，阻障層60，例如當由SiOx所成的情況時，成膜 氣體，係可爲四乙氧矽烷（TEOS )，亦可爲包含有單矽 -14 - 201213954 烷（SiH4)者。 當然，此阻障層60之材料，係並不被限定於矽化合物 ，亦可使用與由丙烯酸系樹脂所成之有機保護膜27相異之 樹脂材料，例如使用苯環丁烯（BCB )樹脂等。進而，阻 障層60，例如，亦可爲在有機保護膜27之表面上照射電漿 而進行改質處理所形成的改質層。就算是此種由樹脂膜或 者是改質層所成的阻障層60，亦能夠對於從有機保護膜27 而來之氣體成分的放出作防止。 又，阻障層60，不論是使用何種之材料的情況下，均 同樣的，就算是形成爲較薄，亦能夠發揮其功能，例如， 只要形成爲數百A以上之厚度，則便能夠對於從有機保護 膜2 7而來之氣體成分的放出作充分的抑制。 另外，在本實施形態中，阻障層60，雖係涵蓋有機保 護膜27以及共通電極41之表面地而連續性設置，但是，例 如如圖4 ( a )中所示一般，阻障層60，係只要至少設置在 有機保護膜27之表面上的並未被形成有共通電極41之區域 處即可。或者是，亦可如圖4(b)中所示一般，將阻障層 60在有機保護膜27之表面上涵蓋略全面地而形成，並將共 通電極41形成在此阻障層60上。 另外，雖然亦依存於形成阻障層6 0之區域，但是，形 成阻障層60之工程，係可在將共通電極41形成於有機保護 膜27上之前來實施，亦可在形成了共通電極41之後再實施 。但是，藉由在形成共通電極41之後再來實施，係能夠對 起因於形成共通電極41時的熱等而導致阻障層60之膜質產 -15- 201213954 生變化的事態作防止。 (試驗例） 如同下述表1中所示一般，製作並未設置阻障層之比 較例的電極基板，和形成了由相異之材料所成的阻障層之 實施例1〜5的電極基板，並對於此些比較例以及實施例1 〜5之電極基板的耐久試驗後之電容絕緣膜的剝離狀態作 了調查。將其結果配合下述表1而作展示。另外，實施例1 〜5之電極基板的構成，除了被設置有阻障層以外，係與 比較例之電極基板相同。 〔表1〕 阻障層 電容絕緣膜之剝離 比較例 無 有 實施例1 SiOx膜（TEOS系） 無 實施例2 SiOx膜（SiH4系） 無 實施例3 電漿改質層 te 實施例4 SiON 膜 ^w\ 實施例5 SiON 膜 無 如此這般，在並未設置阻障層之比較例的電極基板中 ，雖然係爲不會對於作爲裝置來使用一事造成問題的程度 ，但是係確認有電容絕緣膜之剝離’相對於此’在設置有 阻障層之實施例1〜5的電極基板中’不論是何者，均未確 認到電容絕緣膜之剝離。如同由此結果亦能夠明顯得知一 般，若依據在有機保護膜27上設置有阻障層60之本發明的 ( -16- 201213954 構成，則係能夠有效的抑制電容絕緣膜（無機絕緣膜）42 的剝離》 以上，雖係針對本發明之實施形態而作了說明，但是 ，當然，本發明係並不被限定於上述之實施形態，在不脫 離其之要旨的範圍內，係能夠適當作變更。 例如，在上述實施形態中，雖係針對設置了藉由1層 來構成之阻障層60的構成作了例示，但是，阻障層60，係 亦可經由以相異之材料所成的複數之層，來構成之。 【圖式簡單說明】 〔圖1〕對於其中一種實施形態之液晶顯示裝置的構 成作展示之槪略圖。 〔圖2〕對於其中一種實施形態之液晶顯示裝置的像 素區域之槪略構成作展示之剖面圖。 〔圖3〕對於其中一種實施形態之液晶顯示裝置的重 要部分作展示之擴大剖面圖。 〔圖4〕對於其中一種實施形態之液晶顯示裝置的變 形例作展示之擴大剖面圖。 【主要元件符號說明】 I :液晶顯示裝置 1 :電極基板 2 :濾光基板 3 :背光 -17- 201213954 4 :偏光板 1 1 :鬧極線 1 2 :源極線 21 :基底基板 22 :擴散防止層 23 :半導體層 24 :閘極絕緣膜 2 5 :層間絕緣膜 26 :無機保護膜 27 :有機保護膜 2 8 :絕緣保護膜 3 1 :鬧極電極 32 :源極電極 3 3 :汲極電極 41 :共通電極 42 :電容絕緣膜 4 3 :像素電極 5 1 :配線孔 5 2 : T F T接觸孔 60 :阻障層 Tr :薄膜電晶體An electrode substrate for generating an electric field, wherein the electrode substrate for a liquid crystal display device is characterized in that: a thin film transistor provided at a pixel region provided on a surface of the liquid crystal layer side; and at least containing acrylic acid An organic protective film made of a resin, and an insulating protective film provided to cover the thin film transistor; and a common electrode formed on the organic protective film; and an inorganic insulating material and covering the common electrode Inorganic-8-201213954 insulating film disposed on the ground; and a pixel electrode formed on the inorganic insulating film, the surface of the organic protective film is provided with a gas component for the organic protective film The barrier layer for preventing the release is formed, and the inorganic insulating film is formed on the surface of the organic protective film via the barrier layer. [Effects of the Invention] According to the present invention, the peeling of the inorganic insulating film formed on the surface of the organic protective film can be effectively suppressed. Therefore, the reliability or durability of the liquid crystal display device can be improved. [Embodiment] Hereinafter, one embodiment of the present invention will be described with reference to the drawings. As shown in FIG. 1, the liquid crystal display device 1 of the present invention is provided with an electrode substrate 1 provided with a pixel electrode or a thin film transistor (TFT) as described later, and the electrode substrate 1 is opposed to the electrode substrate 1. The filter substrate 2 is configured to be grounded and formed with a color filter or a black matrix. The liquid crystal layer (not shown) is held by the electrode substrate 1 and the filter substrate 2 as described above. In addition, the liquid crystal layer is fixed by a sealing material (not shown) which is applied in a ring shape at the peripheral portion of the filter substrate 2, and is configured to be sealed to the electrode substrate 1 and the filter substrate 2. between. Further, a backlight 3 is provided on the outer side of the electrode substrate 1 (on the side opposite to the liquid crystal layer). Further, between the electrode substrate 1 and the backlight 3, and on the outer side of the filter substrate 2 (on the side opposite to the liquid crystal layer), a polarizing plate 4^201213954 is provided, and a gate is input to the electrode substrate 1. The gate line 1 1 of the pole signal is provided with a plurality of roots at a specific interval, and at the electrode substrate 1, the source line 1 2 to which the source signal is input is connected to the gate line 1 1 The direction in which the extension direction is slightly orthogonal is extended, and is set side by side as a plurality of roots. That is, each of the gate lines 1 1 extends in the X direction in FIG. 1 and is arranged side by side in the y direction. Further, each of the source lines 12 is extended in the y direction in Fig. 1 and arranged side by side in the X direction. Further, the slightly rectangular regions surrounded by the gate lines 11 and the source lines 12 constitute pixel regions (display pixels), respectively. This pixel region is arranged in a matrix in the form of a matrix on the electrode substrate 1. Further, although it will be described later in detail, a thin film transistor (TFT) 作为, which functions as a switching element, is provided in each pixel region, and is connected to the thin film transistor Tr. A pixel electrode P which generates an electric field at the liquid crystal layer. Further, each of the gate lines 11 and the source lines 12 is extended at one end thereof beyond a sealing material (not shown), and is connected to respective output terminals of the drive 1C (not shown). Hereinafter, the electrode structure of each pixel region provided at the electrode substrate 1 will be described in detail using Fig. 2 . As shown in FIG. 2, the electrode substrate 1 is generally provided with a base substrate 21 made of a well-known insulating substrate (for example, a glass substrate or the like), and the surface of the base substrate 21 is formed to be useful for The diffusion preventing layer 22 for suppressing diffusion of ions of Na (sodium) or K (potassium) of the base film 21 toward the thin film transistor Tr is used as the diffusion preventing layer 22, for example, a layer of tantalum nitride can be used. And a laminated structure film composed of a yttrium oxide layer formed on a tantalum nitride layer by a shape of -10-201213954. A thin film transistor Tr is formed on the diffusion preventing layer 22. Specifically, first, a semiconductor layer 23 made of, for example, a polycrystalline semiconductor such as polysilicon is formed on the diffusion preventing layer 22. At a layer above the semiconductor layer 23, a gate insulating film 24 is formed to cover the semiconductor layer 23. On the gate insulating film 24, a gate electrode 31 is formed at a position opposed to the semiconductor layer 23. The gate electrode 31 is constituted by the above-described gate line 1 1 (refer to Fig. 1). The gate insulating film 24 is provided to ensure insulation between the gate electrode 31 and the semiconductor layer 23. Further, on the gate electrode 31, an interlayer insulating film 25 is formed to cover the gate electrode 31, and a region on the interlayer insulating film 25 opposed to the semiconductor layer 23 is formed to be active. The electrode electrode 32 and the drain electrode 33»source electrode 32 are formed via the above-described source line 12 (refer to FIG. 1). The source electrode 32 and the drain electrode 33 are buried in the wiring hole 51. The wiring holes 513 are provided at both outer sides of the gate electrode 31 in FIG. 2, and are provided with the source electrode 32 and the 被 buried in the wiring hole 51 through the interlayer insulating film 25 and the gate insulating film 24. The electrode electrodes 33 are connected to the semiconductor layer 23, respectively. Further, although not shown, a doped layer doped with phosphorus or boron, a source electrode 32, and a drain electrode 33 are present on both sides of the semiconductor layer 23 where the gate electrode 31 is held. In fact, it is connected to this doped layer. In other words, the gate electrode 3 1 , the source electrode 32 , and the drain electrode 33 and the semiconductor layer 23 are formed to constitute a thin film transistor functioning as a switching element of each pixel in the liquid crystal display device 1. Tr. Further, in the source electrode 32 and the drain electrode 33 constituting the thin film transistor Tr, an insulating protective film 28 made of the inorganic protective film 26 and the organic protective film 27 is formed. The insulating protective film 28 is used for protecting the thin film transistor Tr, and the inorganic protective film 26 is made of, for example, tantalum nitride, and the insulating protective film 27 is made of, for example, an acrylic resin. Further, the organic protective film 27 not only protects the thin film transistor Tr but also functions to flatten the surface of the electrode substrate 1. The organic protective film 27 is provided with a common electrode 41 to which a reference voltage common to all of the pixel regions is applied. This common electrode 41 is patterned on the organic protective film 27 to have a specific shape. That is, the common electrode 41 is not formed over the entire surface of the organic protective film 27, but is disposed at a portion of the surface of the organic protective film 27. On the common electrode 41, a capacitor insulating film 42 which is an inorganic insulating film is provided, and further, a capacitive electrode film 42 is provided with, for example, a comb-shaped pixel electrode 43 (P). The capacitor insulating film 42 is made of an inorganic insulating material having light transparency, and covers the entire surface of the organic protective film 27 with the common electrode 41 completely covered. That is, the capacitor insulating film 42 is continuously provided from the common electrode 41 to the organic protective film 27. In the present embodiment, the capacitive insulating film 42 held by the pixel electrode 43 and the common electrode 41 functions as a capacitor. By this, it is necessary to additionally provide an electrode for use as a capacitor. The common electrode 4 1 and the pixel electrode 43 are formed via a transparent conductive material. In the present embodiment, ITO is used for -12-201213954. However, the ITO is not limited to ITO, and a well-known transparent conductive film may be used. For example, a zinc oxide-based transparent conductive film or the like may be used. Further, in the capacitor insulating film 42 and the insulating protective film 28, the TFT contact holes 52 through which the surfaces of the drain electrodes 33 are exposed are formed. Further, the pixel electrode 43 is also continuously formed in the TFT contact hole 52, and is connected to the gate electrode 33 in the TFT connection hole 52. In the liquid crystal display device 1 of such a configuration, if When a gate signal is input to the gate electrode 31 of the thin film transistor Tr, the data signal from the source electrode 32 is transmitted to the pixel electrode through the semiconductor layer 23 and the drain electrode 33. Then, the alignment direction of the liquid crystal molecules is changed by an electric field (lateral electric field) generated between the pixel electrode 43 and the common electrode 41 in response to the data signal. Further, as described above, the capacitor insulating film 42 for insulating between the pixel electrode 43 and the common electrode 41 is provided continuously from the common electrode 41 to the organic protective film 27. In the present invention, for example, as shown in Fig. 3, a barrier layer 60 for preventing the release of a gas component from the organic protective film 27 is provided on the organic protective film 27. In the present embodiment, the barrier layer 60 is continuously provided to cover the surfaces of the organic protective film 27 and the common electrode 41. The capacitor insulating film 42 is formed on the organic protective film 27 via the barrier layer 60. Settings. By this, it is possible to effectively suppress the peeling of the capacitor insulating film 42 made of tantalum nitride or the like formed on the organic protective film 27 made of an acrylic resin. In the constitution in which the capacitor insulating film is directly formed on the organic -13-201213954 protective film as in the prior art, the problem of peeling of the capacitor insulating film formed on the organic protective film occurs. In this case, when a capacitor insulating film is formed, oxygen contained in, for example, carbonic acid in the organic protective film made of an acrylic resin is precipitated, and the oxygen (gas component) reacts with the constituents of the capacitor insulating film. And forming a hafnium oxide film integrally with the capacitor insulating film. That is, the stress difference between the capacitive insulating film formed of tantalum nitride and the tantalum oxide film which is integrally formed, at the interface between the capacitor insulating film and the tantalum oxide film, The system will produce peeling. However, in the configuration of the present invention, the capacitor insulating film 42 is provided on the organic protective film 27 via the barrier layer 60. By this, the reaction between the gas component emitted from the organic protective film 27 and the capacitor insulating film 42 is suppressed, and the oxide film can be integrally formed integrally on the surface of the capacitor insulating film 42. One thing to prevent. In other words, by providing the barrier layer 60 on the organic protective film 27, peeling of the capacitor insulating film 42 can be effectively suppressed. Here, as the material of the barrier layer 60, it is only necessary to prevent the release of the gas component from the organic protective film 27. However, it is necessary to be organic in the acrylic resin. The protective film 27 is formed at a temperature lower than the heat resistant temperature (250 ° C). The material of the barrier layer 60 which satisfies such a condition is, for example, a ruthenium compound, and specifically, SiOx, SiON or SiCN can be suitably used. Further, such a barrier layer 60 made of a ruthenium compound is formed, for example, by a C V D method or the like. Further, in the case where the barrier layer 60 is formed of, for example, SiOx, the film forming gas may be tetraethoxy decane (TEOS) or may be one containing fluorene -14 - 201213954 alkane (SiH4). Of course, the material of the barrier layer 60 is not limited to the ruthenium compound, and a resin material different from the organic protective film 27 made of an acrylic resin may be used, for example, benzocyclobutene (BCB) resin is used. Wait. Further, the barrier layer 60 may be, for example, a modified layer formed by irradiating a plasma on the surface of the organic protective film 27 and performing a modification treatment. Even in the case of such a barrier layer 60 made of a resin film or a modified layer, the release of the gas component from the organic protective film 27 can be prevented. Further, the barrier layer 60 can be used in the same manner even when it is made of a material, for example, if it is formed to have a thickness of several hundred A or more, it can be used. The release of the gas component from the organic protective film 27 is sufficiently suppressed. Further, in the present embodiment, the barrier layer 60 is continuously provided to cover the surfaces of the organic protective film 27 and the common electrode 41. However, for example, as shown in FIG. 4(a), the barrier layer 60 is generally provided. It suffices that it is provided at least on the surface of the organic protective film 27 where the common electrode 41 is not formed. Alternatively, as shown in Fig. 4(b), the barrier layer 60 may be formed over the surface of the organic protective film 27 in a slightly more comprehensive manner, and the common electrode 41 may be formed on the barrier layer 60. In addition, although depending on the region in which the barrier layer 60 is formed, the process of forming the barrier layer 60 may be performed before the common electrode 41 is formed on the organic protective film 27, or a common electrode may be formed. After 41, it will be implemented. However, by performing the formation of the common electrode 41, it is possible to prevent the film quality of the barrier layer 60 from being changed due to heat or the like when the common electrode 41 is formed. (Test Example) As shown in the following Table 1, an electrode substrate of a comparative example in which a barrier layer was not provided, and electrodes of Examples 1 to 5 in which a barrier layer made of a different material was formed were produced. The substrate was examined for the peeling state of the capacitor insulating film after the endurance test of the electrode substrates of Comparative Examples and Examples 1 to 5. The results are shown in conjunction with Table 1 below. Further, the configuration of the electrode substrate of Examples 1 to 5 was the same as that of the electrode substrate of the comparative example except that the barrier layer was provided. [Table 1] Comparative Example of Peeling of Barrier Capacitor Insulating Film No Example 1 SiOx film (TEOS system) No Example 2 SiOx film (SiH4 system) No Example 3 Plasma reforming layer te Example 4 SiON film ^w\ Example 5 The SiON film does not have such a degree. In the electrode substrate of the comparative example in which the barrier layer is not provided, although it does not cause a problem for use as a device, it is confirmed that there is capacitive insulation. In the electrode substrates of Examples 1 to 5 in which the barrier layers were provided, the peeling of the film was 'in any case', and no peeling of the capacitor insulating film was observed. As a result of the present invention (-16-201213954) in which the barrier layer 60 is provided on the organic protective film 27, the capacitor insulating film (inorganic insulating film) can be effectively suppressed. The above-described embodiment of the present invention has been described with reference to the embodiments of the present invention. However, the present invention is not limited to the above-described embodiments, and can be appropriately made without departing from the scope of the invention. For example, in the above embodiment, the configuration in which the barrier layer 60 formed of one layer is provided is exemplified, but the barrier layer 60 may be formed by using different materials. BRIEF DESCRIPTION OF THE DRAWINGS [FIG. 1] A schematic diagram showing the configuration of a liquid crystal display device of one embodiment. [FIG. 2] A liquid crystal display device of one embodiment The outline of the pixel area is shown as a cross-sectional view for display. [Fig. 3] An enlarged cross-sectional view showing an important part of the liquid crystal display device of one embodiment. [Fig. 4] An enlarged cross-sectional view showing a modification of the liquid crystal display device of one embodiment. [Description of main components] I: Liquid crystal display device 1: Electrode substrate 2: Filter substrate 3: Backlight-17-201213954 4: Polarizing plate 1 1 : noisy line 1 2 : source line 21 : base substrate 22 : diffusion preventing layer 23 : semiconductor layer 24 : gate insulating film 2 5 : interlayer insulating film 26 : inorganic protective film 27 : organic protective film 2 8 : insulating Protective film 3 1 : electrode electrode 32 : source electrode 3 3 : drain electrode 41 : common electrode 42 : capacitor insulating film 4 3 : pixel electrode 5 1 : wiring hole 5 2 : TFT contact hole 60 : barrier layer Tr : Thin film transistor