TW201208137A - Method for manufacturing ceramic substrate and semiconductor package using the ceramic substrate - Google Patents

Method for manufacturing ceramic substrate and semiconductor package using the ceramic substrate Download PDF

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Publication number
TW201208137A
TW201208137A TW100115576A TW100115576A TW201208137A TW 201208137 A TW201208137 A TW 201208137A TW 100115576 A TW100115576 A TW 100115576A TW 100115576 A TW100115576 A TW 100115576A TW 201208137 A TW201208137 A TW 201208137A
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Taiwan
Prior art keywords
ceramic
substrate
ceramic substrate
cavity
wall
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TW100115576A
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Chinese (zh)
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TWI433359B (en
Inventor
Gil-Sun Lee
Sung-Baek Dan
Myung-Yeol Lee
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Amoleds Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Led Device Packages (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)

Abstract

Disclosed herein is a method of manufacturing a ceramic substrate for a semiconductor package which can prevent interface separation and can exhibit high reflectivity. The method includes the steps of: preparing an upper ceramic substrate which a cavity having an inside wall is formed through, wherein the inside wall is inclined by a predetermined angle to a lower ceramic substrate; coating the inside wall of the cavity with a ceramic material to form a reflecting layer; disposing a molded body on the lower ceramic substrate, wherein the molded body comprises the upper ceramic substrate and the reflecting layer; and heating-treating the lower ceramic substrate and the molded body to integrate the lower ceramic substrate and the molded body.

Description

201208137 、發明說明: 【發明所屬之技術領域】 驻月^關於一種使用於半導體發光二極體(LED)封 i,I:綠板的製造方法’以❹發光二極體作為發光元 牛,而以使用陶瓷基板作為半導體封裝。 【先前技術】 拉極體(以下簡稱為“LED”)是一種半導體元件, 精由複合的半導電材料,例如:_、、㈣、 二二以t類似之材料,彼此互相結合而構成 二〜λ、’而㈣貫現各種色彩。目前,這種半導體元 件! $以封裝的形式使用於電子部件。 圖1疋一個傳、统led封裝的側面剖視 圖。參考圖1, 封f包括兩個陶究基板1〇和12,各喊基板均係 夕個:变薄片而形成。在該二個陶莞基板中,下 搞0'V: T裝有相互間隔的電極14矛口 16。該下陶竟基 -區域用以安裝LEDl8。配置於電極】6之上 :申至二引線2〇接合於電極M。電極14和16係延 1中的底部。上陶究基板12内有凹腔形成於 其中’而使該凹腔包圍咖18的安裝區。 在t文中’备該凹腔是藉由沖壓或切割而形成,如圖 〗0。:於μ-士陶瓷基板12的剖面一直垂直於下陶瓷基板 —理由’與利㈣丨脂成韻形成之封裝不同, 其很難在上喊基板12之上形成高品f的反射層。 v因此為了形成高品質的反射層,如圖2所示,一凹 基板12中’賴將該上陶究基 板12的斜面金屬化,接著链上銀(Ag)。圖2顯示了一個 4/22201208137, the invention description: [Technical field to which the invention pertains] The present invention relates to a method for manufacturing a semiconductor light-emitting diode (LED), i: a green plate, using a neon light-emitting diode as a light-emitting elementary cow. A ceramic substrate is used as the semiconductor package. [Prior Art] A polar body (hereinafter referred to as "LED") is a semiconductor element which is composed of a composite semi-conductive material, for example, _, (4), and 22, which are combined with each other to form a second material. λ, 'And (4) to achieve a variety of colors. Currently, this semiconductor component! $ is used in package form for electronic components. Figure 1 is a side cross-sectional view of a transmission and packaging package. Referring to Fig. 1, the seal f includes two ceramic substrates 1 and 12, each of which is formed by a thin sheet. In the two pottery bases, 0'V: T is placed with the spokes 16 of the electrodes 14 spaced apart from each other. The lower pottery base area is used to mount the LED l8. Disposed on the electrode 6: The second lead 2 is bonded to the electrode M. Electrodes 14 and 16 are the bottom of the extension 1 . In the upper ceramic substrate 12, a cavity is formed therein, and the cavity is surrounded by the mounting area of the coffee maker 18. In the t text, the cavity is formed by stamping or cutting, as shown in Fig. 0. The cross section of the μ-shi ceramic substrate 12 is always perpendicular to the lower ceramic substrate. The reason is that it is difficult to form a reflective layer of a high-quality f on the upper substrate 12, unlike the package formed by the ruthenium. v Therefore, in order to form a high-quality reflective layer, as shown in Fig. 2, a concave substrate 12 is metallized by the bevel of the upper ceramic substrate 12, followed by silver (Ag) on the chain. Figure 2 shows a 4/22

S 201208137 以銀電趟所形成的反射層22。 因此’相較於圖1中之LED封奘,岡7祕-封裝學效率。似圖2所不之咖 接著由於上喊基板12的傾斜表面是被金屬化後, 因此,圖2中的反射層22可能會不均 鑛切,Λ ,該上喊基板12之傾斜表面的必須 ’二(Ag),然而電鍍卻不均勻。基於此一理由,m 的所不之LED封裝,其所展現出之光學效率低於所^期 基板12的凹腔中被魏材料、環氧樹 ^ 仙物質的混合物所填充卿成魏層。在這種产 形下’由於含於碟光層的環氧樹脂以及含於反射層 二 二Ϊ:性質上彼此不同’在磷光層與反射層22之間的 偏移°基於此—,榮光層和反射層22可以相互 【發明内容] 因此’本發明係用以解決上述問題,本發 提供:種陶咖的製造方法,其可在不經電鍍的;: :开lit具有類似於基板本體之材料的高度反射材料 所形成的反射層,而增加光效率。 本發明的另一個目標係提供高品質的半導 1 具有=學效率,並可解決在^同性質之材^_著降 低之問題。 :了 $上述目標,本發明提供了—種陶繼的製 仏方法4括.製備具有内壁之凹腔貫穿於立 上喊基板,其中該内壁係以狀的角度向下.基板傾 5/22 201208137 斜;以_材料塗布該凹腔之内壁以形成反射層;於該下 陶究基板上配置模製體(_ded bQdy),其中該模製體係 ^括上喊基板與反射層;以及熱處理該下陶究基板與該 核製體以結合該下喊基板與簡製體。财法可進一步 包括在該上喊基板的上表面上塗布陶究材料,但不包括 配置模製體之區域。 、本發明的另一方面在於提供一種製造陶瓷基板的方 法其包括·以陶瓷材料填充凹腔,該凹腔貫穿形成於包 3支禮體之上陶:£基板之中,其中位於該上陶絲板之底 P之》玄支撐體分' 由陶瓷材料製成’並以垂直於該凹腔之方 向向内大出,以抽氣裝置除去填充於該凹腔内之陶瓷材料 以形成反射層,其巾該反射層係殘留於該凹腔之内壁上之 陶瓷材料且為支撐體之上部側面;於該下陶瓷基板上配置 模製體’其巾該㈣體包含該上喊基板以及該反射層; ,及熱處理該下陶瓷基板及模製體以結合該下陶瓷基板和 该杈製體。於此處,該反射層可具有向内之圓形曲面。該 上陶瓷基板與該下陶瓷基板可由相同的陶瓷材料製成(例 士低/皿共燒陶瓷(l〇w temperature c〇fired⑽啦匕, LTCC ))。该陶瓷材料可為陶瓷粉末及自由二氧化鈦 (Τι〇2)、二氧化锆(Zr〇2)與氧化鋅(Zn〇)所構成群組中選出 的至少一種之混合物。 、本發明的又一方面,在於提供一種製造陶瓷基板的方 法,包括:製備具有内壁之凹腔貫穿形成於其中的上陶瓷 基板,其中該内壁係以預定的角度向下陶瓷基板傾斜,於 。亥下陶瓷基板上設置該上陶瓷基板;以及熱處理該上陶瓷 基板與該下陶瓷基板以結合該下陶瓷基板與該上陶瓷基 6/22S 201208137 A reflective layer 22 formed of silver enamel. Therefore, compared to the LED seal in Figure 1, the efficiency of the package. As shown in Fig. 2, since the inclined surface of the substrate 12 is metallized, the reflective layer 22 in Fig. 2 may be unevenly cut, and the upper surface of the substrate 12 must be slanted. 'Second (Ag), however the plating is not uniform. For this reason, the optical package of m is not as good as that of the mixture of the Wei material and the epoxy material in the cavity of the substrate 12 . In this production form, the refractory layer is based on the epoxy resin contained in the disc layer and the dichroic layer contained in the reflective layer: the difference between the phosphor layer and the reflective layer 22 is based on this. And the reflective layer 22 can be mutually mutually [invention] Therefore, the present invention is to solve the above problems, and the present invention provides a method for manufacturing a ceramic coffee, which can be electroplated; The highly reflective material of the material forms a reflective layer that increases light efficiency. Another object of the present invention is to provide a high quality semiconducting 1 with a learning efficiency and to solve the problem of lowering the material in the same nature. : The above object, the present invention provides a method for making a shovel of the terracotta. 4 . Preparing a cavity having an inner wall penetrating through the vertical substrate, wherein the inner wall is inclined at an angle of a shape. The substrate is tilted 5/22 201208137 oblique; coating the inner wall of the cavity with a material to form a reflective layer; disposing a molded body (_ded bQdy) on the underlying substrate, wherein the molding system includes a substrate and a reflective layer; and heat treating the substrate The underlying substrate and the core body are combined to bond the lower substrate and the simplified body. The financial method may further include coating the ceramic material on the upper surface of the upper substrate, but does not include the area in which the molded body is disposed. Another aspect of the present invention provides a method of manufacturing a ceramic substrate, comprising: filling a cavity with a ceramic material, the cavity being formed through a substrate of a package body, wherein the substrate is located The bottom of the silk plate P is made of a ceramic material and is inwardly directed in a direction perpendicular to the cavity, and the ceramic material filled in the cavity is removed by an air suction device to form a reflective layer. The reflective layer is a ceramic material remaining on the inner wall of the cavity and is a side of the upper surface of the support; a molded body is disposed on the lower ceramic substrate, and the (four) body includes the upper substrate and the reflection a layer; and heat treating the lower ceramic substrate and the molded body to bond the lower ceramic substrate and the tantalum body. Here, the reflective layer can have an inwardly curved surface. The upper ceramic substrate and the lower ceramic substrate may be made of the same ceramic material (e.g., 〇w temperature c〇fired (10) 匕, LTCC). The ceramic material may be a mixture of ceramic powder and at least one selected from the group consisting of free titanium dioxide (Τι〇2), zirconium dioxide (Zr〇2) and zinc oxide (Zn〇). According to still another aspect of the present invention, there is provided a method of manufacturing a ceramic substrate, comprising: preparing an upper ceramic substrate having a cavity having an inner wall formed therein, wherein the inner wall is inclined downward toward the ceramic substrate at a predetermined angle. The upper ceramic substrate is disposed on the ceramic substrate under the sea; and the upper ceramic substrate and the lower ceramic substrate are heat treated to bond the lower ceramic substrate and the upper ceramic substrate 6/22

S 201208137 板’其中該上喊騎以及該下喊基板係由反射陶曼材 料所製該反射陶㈣料係由喊粉末、及自由二氧化 欽、一氧化錯與氧化鋅所構成群組中選出的至少一種之混 合物。 本發明提供了一種半導體封裝件,其包含:具有内壁 之凹腔貫穿形成於其中的喊基板,其中該内壁係以預定 的角度向棚t基板底面傾斜;安裝於該凹腔内之發光元 件;以及塗布於該内壁上之陶瓷材料。 D玄半導體封裝件可進—步包含塗布於該凹腔底面上之 陶瓷材料。 人本發明的另一方面在於提供一種半導體封裝件,其包 δ .具有内壁之凹腔貫穿形成於其中的陶瓷基板,其中該 内壁仏垂直於該H基板之底面;安裝於該凹腔之發光元 牛以及反射層,其由陶曼材料所製成並形成於該凹腔之 及底面,並覆錢―❹個發光元件之安裝區及引線 接合區以外區域。 &此處材靠㈣t粉末,及自由二氡化鈦、二 與氧化鋅所構成群財選出的至少—種之混合物。 射層可具有向内之圓形曲面。 勺人本發明蚊另―祕在於提供一料導制裝件,立 =:具有内壁之凹腔形成於其中賴基板,其中軸 ^預定之肖度向該喊基板之底面傾斜·,以及安裝於 〜凹腔之發光元件安裝區之發U件,其中, 柄 整體係由反射陶:紐料所製成,該 = 末及自由二氧化m储μ⑽陶竞粉 的至少一種之思合物。屬鋅所構成群組中選出 7/22 201208137 【實施方式】 上述及本發明的目的、特徵及優點由下述附加圖式詳 細地描述可更清楚了解。 以下將就本發明之較佳實_,參_圖詳細說明之。 圖3至圖6係顯示本發明之第一實施例之製造陶究基 板的方法,以及利㈣方法所製造之_基板。在以下規 明該製造陶究基板的方法時,將說明製造單一陶曼基板的 製程…般而言’由於多個喊基板是同時生產的,這種 製造喊基板的方法並;^限於製造單—㈣基板的製 程。 、 此外’在本方法中,陶曼基板是透過進行單一的熱處 理而形成。具體而言,構成陶€基板的#料具有柔軟的性 質’直到以下圖6所述之製程完錢,換言之,在進行熱 ,理之前’且透過在圖6之製織的熱處理*變硬,也就 是在下陶瓷基板38上附加模製體之後。 參考圖3 ’首先’製備具有内壁45之凹腔形成於其中 之上喊基板。㈣45以預定之向該喊基板之底面 傾斜。在本發日种,内壁45的角度可根據需要之反射角度 而加以改變。 將上陶瓷基板44予以穿孔而形成一凹腔。該上陶瓷基 板44可透過堆疊多侧賴片而形成,或可由—個具有^員 定厚度的陶瓷薄片所形成。 。如圖3所示’上喊基板44可在—個大型喊板上的 各單元區内-個接-個的形成。該單元區是製造—個陶究 基板所需的最小區域,可包含上陶錄板與下㈣基板可 堆疊並進而透過切割而彼此分離的最小面積。 8/22S 201208137 board 'where the shouting and the shouting substrate are made of reflective Taoman material. The reflecting pottery (four) material is selected from the group consisting of shouting powder, free dioxins, mono-oxidation and zinc oxide. a mixture of at least one of them. The present invention provides a semiconductor package comprising: a cavity having an inner wall through which a dummy substrate is formed, wherein the inner wall is inclined at a predetermined angle toward a bottom surface of the substrate; a light-emitting element mounted in the cavity; And a ceramic material coated on the inner wall. The D-semiconductor package can further include a ceramic material coated on the bottom surface of the cavity. Another aspect of the present invention provides a semiconductor package having a cavity δ having a cavity extending through a ceramic substrate formed therein, wherein the inner wall 仏 is perpendicular to a bottom surface of the H substrate; and the light is mounted on the cavity The bull and the reflective layer are made of Tauman material and formed on the bottom surface of the cavity, and cover the mounting area of the light-emitting element and the area outside the wire bonding area. & Here, the mixture is based on (iv) t powder, and at least a mixture of free titanium dioxide, and zinc and zinc oxide. The shot layer can have an inwardly curved surface. The scoop of the present invention is to provide a guide member, and the vertical cavity is formed in the cavity, wherein the predetermined angle of the shaft is inclined to the bottom surface of the shouting substrate, and is mounted on The U-shaped member of the mounting portion of the light-emitting component of the cavity, wherein the handle is entirely made of reflective ceramic: a new material, and at least one of the last and free-dioxide m storage μ (10) Tao Jing powder. 7/22 201208137 selected from the group consisting of zinc. [Embodiment] The above and other objects, features and advantages of the present invention will become more apparent from the accompanying drawings. Hereinafter, the preferred embodiment of the present invention will be described in detail. 3 to 6 show a method of manufacturing a ceramic substrate according to a first embodiment of the present invention, and a substrate manufactured by the method of the fourth embodiment. In the following description of the method for manufacturing a ceramic substrate, a process for manufacturing a single Tauman substrate will be described. [In general, since a plurality of shouting substrates are simultaneously produced, such a method of manufacturing a substrate is not limited to a manufacturing sheet. - (d) the process of the substrate. Further, in the present method, the Tauman substrate is formed by performing a single heat treatment. Specifically, the material constituting the substrate has a soft property 'until the process described in FIG. 6 below is completed, in other words, before the heat is performed, and the heat treatment* of the woven fabric of FIG. 6 is hardened, That is, after the molded body is attached to the lower ceramic substrate 38. Referring to Fig. 3 'first', a cavity having an inner wall 45 is formed to form a substrate thereon. (4) 45 is inclined to the bottom surface of the shouting substrate by a predetermined period. On the present day, the angle of the inner wall 45 can be varied depending on the desired angle of reflection. The upper ceramic substrate 44 is perforated to form a cavity. The upper ceramic substrate 44 may be formed by stacking a plurality of side sheets, or may be formed of a ceramic sheet having a predetermined thickness. . As shown in Fig. 3, the upper substrate 44 can be formed in each unit area of a large board. The cell area is the smallest area required to fabricate a ceramic substrate, and may include a minimum area in which the upper and lower (four) substrates can be stacked and then separated from each other by cutting. 8/22

S 201208137 參考圖4’該上陶瓷基板44的内壁被陶瓷材料所塗布, 以形成具有反射層46的模製體。 陶瓷材料可由與構成上陶瓷基板44之相同陶瓷材料所 構成。因此,舉例而言,反射層46的反射性的可藉由於陶 瓷粉末中增加預定之反射材料(如低溫共燒陶瓷(LTCC)) 而予以增加。 預疋的反射材料可包含自由二氧化鈦、二氧化錯與氧 化鋅所構成群組中選出的至少一種。該反射材料對陶瓷粉 末的重里比可被設為15%左右。在以下測試中,所使用之 於反射層4 6中的反射材料對陶瓷粉末的重量比亦為15 %左 右。然而’該反射材料的成分則不以此為限。 藉由形成模製體的製程,具有反射層46的同質之模製 體可透過塗布高反射陶瓷材料的製程而輕易地形成,從而 提南產量。 本發明中形成模製體的製程具有額外的優點。因為所 有成形的模製體通常包含陶瓷材料,它們可以透過隨後進 亍的單熱處理而製成陶究基板,從而在熱處理中將反射 曰46與上陶瓷基板44之間,以及反射層46與下陶瓷基板 38之間的介面分離減少到最小,並將上述之間的整體性最 大化。 參考圖5和圖6 ,模製體被配置於扁平之下陶瓷基板 38上。 一在圖5和圖6之製程後,將每個單元區切割,然後進 行熱處理。在熱處理完畢後,該陶瓷基板具有如第六圖所 =之結構。換言之,該模製體被配置於下陶瓷基板38上, 母個單元區均被切割而形成多個陶瓷基板,將該多個陶瓷 9/22 201208137 基板放入供箱或類似設備。 究基級爾理時,各陶 料且彼此;;峨咖及反射 麥考圖6中經熱處理後之陶究基板,由 由本==板…層46均包含相同的陶= 的陶^其1闕所製造的㈣基板生產可為一結合 =竞基板。因此’即使半導體職件是透過將埴充料(如 透明石夕材料或類似材料)填充於陶究基板而生產,仍 將材料間的介面分離能降低至最小的優點。 八 ,7為根據本發明之第一實施例所修改之實施例的另 一陶-瓦基板的側面剖視圖。 圖7為一陶究基板的側面剖視圖,其透過在除上 基板44及反射層46 (模劁,)αa μ 、 租)以反射層48的陶瓷材料處 ^ ^外,額外地塗布下陶£基板之表面之製程而製 以° 、吕之’下陶究基板表面對應於凹腔的區域將塗 由陶究材料製成之反射層48。下陶£基板表面的塗布可在 於下陶究基板38上配置模製體及進行熱處理之間進行。 當半導體封裝件的成形加工透過稍後的安農發光元件 及填充碟光層而完成後’半導體封裝件的反射率可藉由形 成於下陶瓷基板38的反射層而予以改善。 圖8係顯示-利用根據本發明之第一實施例所製造之 陶究基板之半導體縣狀側面職圖。圖 透明石夕材料㈣叙填絲。 參考圖8’未顯示於第六圖和第七圖的電極他和他 形成於下陶竟基板38的上、下表面。電極5〇a和通係經 10/22S 201208137 Referring to Fig. 4', the inner wall of the upper ceramic substrate 44 is coated with a ceramic material to form a molded body having the reflective layer 46. The ceramic material may be composed of the same ceramic material as that of the upper ceramic substrate 44. Thus, for example, the reflectivity of the reflective layer 46 can be increased by the addition of a predetermined reflective material (e.g., low temperature co-fired ceramic (LTCC)) to the ceramic powder. The pre-reflected reflective material may comprise at least one selected from the group consisting of free titanium dioxide, dioxins, and zinc oxide. The weight ratio of the reflective material to the ceramic powder can be set to about 15%. In the following tests, the weight ratio of the reflective material to the ceramic powder used in the reflective layer 46 was also about 15%. However, the composition of the reflective material is not limited thereto. By forming the molded body, the homogeneous molded body having the reflective layer 46 can be easily formed by a process of coating the highly reflective ceramic material, thereby increasing the yield. The process of forming a molded body in the present invention has additional advantages. Since all of the formed molded bodies usually comprise a ceramic material, they can be formed into a ceramic substrate by a single heat treatment of subsequent entanglement, thereby interposing between the reflective crucible 46 and the upper ceramic substrate 44, and the reflective layer 46 and under the heat treatment. The interface separation between the ceramic substrates 38 is minimized and the integrity between the above is maximized. Referring to Figures 5 and 6, the molded body is disposed on the flat lower ceramic substrate 38. After the processes of Figures 5 and 6, each cell area is cut and then heat treated. After the heat treatment is completed, the ceramic substrate has a structure as shown in Fig. 6. In other words, the molded body is disposed on the lower ceramic substrate 38, and the mother cell regions are each cut to form a plurality of ceramic substrates, and the plurality of ceramic 9/22 201208137 substrates are placed in a supply box or the like. At the base level, each pottery material and each other;; 峨 及 及 反射 及 及 及 及 麦 麦 麦 麦 麦 麦 麦 麦 麦 麦 麦 麦 麦 麦 麦 麦 麦 麦 麦 麦 麦 麦 麦 麦 麦 麦 麦 麦 麦 麦 麦 麦 麦 麦 麦 麦(4) The substrate produced by 阙 can be a combination = competition substrate. Therefore, even if the semiconductor component is produced by filling a tantalum-filled material (such as a transparent stone material or the like) on a ceramic substrate, the interface separation between materials can be minimized. 8 and 7 are side cross-sectional views of another ceramic tile substrate according to a modified embodiment of the first embodiment of the present invention. Figure 7 is a side cross-sectional view of a ceramic substrate which is additionally coated with a ceramic material of the reflective layer 48 except for the upper substrate 44 and the reflective layer 46 (a). The process of the surface of the substrate is made of a reflective layer 48 made of a ceramic material, and the area corresponding to the cavity of the surface of the substrate is coated with a ceramic material. The coating of the surface of the substrate can be carried out between disposing the molded body on the lower ceramic substrate 38 and performing heat treatment. The reflectance of the semiconductor package can be improved by the formation of the reflective layer formed on the lower ceramic substrate 38 after the formation of the semiconductor package is completed by the later Annon light-emitting element and filling of the light-distributing layer. Fig. 8 is a view showing a semiconductor county side view of a ceramic substrate manufactured by using the first embodiment of the present invention. Figure Transparent stone eve material (four) is filled with silk. Referring to Fig. 8', electrodes which are not shown in the sixth and seventh figures are formed on the upper and lower surfaces of the lower ceramic substrate 38. Electrode 5〇a and through the system 10/22

S 201208137 由其上表面紐連接於發光元件52,並經由其下表面電性 連接於安裝半導體封裝件(未顯示)。 、反射層48可塗布於下陶£基板38的表面,但不包括 連接電極50a# 5〇b以及配置上陶究基板44的區域。然 而,可形成反射層48,並藉由控制電極5〇a及5〇b的高度 以使其覆蓋電極50b,但不覆蓋電極5〇a。圖9至圖13顯 示了本务明之第二貫施例之製造陶瓷基板的方法,以及利 用該方法所製造之陶瓷基板。 參A?、圖9’製備上陶曼基板3〇。上陶究基板包含凹腔3〇 及支撐體30b。該凹腔有一垂直壁面30a。參照圖9所示之 上部側面’該垂直壁面30a可能自支撐體30b分離,但是, 如圖9所示之下部側面,該上陶瓷基板3〇可透過同時製造 多個陶瓷基板並切割各該區域的方式而製成。 該凹腔貫穿形成於上陶瓷基板30。該上陶瓷基板30可 藉由堆疊多個陶瓷薄片形成,或可由一具有預定厚度的陶 瓷薄片所形成。 該凹腔可藉由沖壓或切割而垂直形成。支撐體30b形 成於該上陶瓷基板30的垂直壁面30a之底面,以使其向内 突出。無論是垂直壁面30a及支撐體30b均可由陶瓷材料 (如低溫共燒陶瓷(LTCC))製成。 如圖9所示。上陶瓷基板30可在一大型陶瓷板的各單 元區一個接一個的形成。該單元區是製造一個陶究基板所 需的最小區域,可包含上陶瓷基板與下陶瓷基板可積層並 透過切割而彼此分離的最小面積。 參照圖10。具有通孔圖案(hole pattern)的光罩32被 裝置於上陶瓷基板30的垂直壁面30a之上。在這種情形 11/22 201208137 下’可裝置光罩32以使其不覆蓋上陶曼基才反3〇之凹腔的 開口’後’使用刮聚板34 (squeegee)將高反射陶竞材 料36填充入形成於上陶瓷基板3〇的該凹腔。亦即,該高 反射陶曼材料36係藉由使用刮漿板34的印刷製程而填= 於該凹腔。 、 該高反射_材料36可包含與構成上陶i基板3〇的 垂直壁面30a及支撐體30b相同之陶瓷材料。因此,舉例 而言’陶錄板的反射率可以藉由在陶聽末中加入予^定 之反光材料(例如低溫共燒陶瓷(LTCC))而提高。此一 製程之說明與如圖3至® 6所示之第-實施例相同。 參考圖η。光罩32被移除,然後陶:是材料36緊密地 附著於垂直壁面之内側及支稽體之上部側面。換言之二 充之陶究材料36的中央部分被抽吸,以排出該中^部分。、 因此,如圖η所示,陶竟材料36僅殘留於該垂二 面的内側(凹腔之内壁)和支撐體的上部側 : 瓷材料36將成為曲面反射層%。 、 包含彎曲的反射層36之上喊基板3G經由圖9至圖 η之製程所製造,被稱為模製體。 u 在根據本發明之第二實施例的模製體之成 由於含彎曲的反射層之該模製體可以經由高反射 的填充和抽吸製程而輕易地形成,相較於在傳统 ===形成’模製體的成形製程:為簡 此外,由於所有成形的模製體通常均包含 了ΐ、經單一的熱處理而形成陶究基板,因而使 在熱處理衣程中’垂直壁面3〇a與陶变材料36,以及支撐 12/22 201208137 體30b與垂直壁面30a之間所發生的介面分離降低至最小。 蒼照圖12。模製體被安襄在扁平之下陶究基板%上。 如上所述,光罩32在圖11的製程中被移除,但如有必要, 光罩32可在圖12的製程後再行移除。 在圖12之製程後,各單元區被切割,並進行熱處理。 在熱處理完畢後,陶瓷基板具有如圖13所示之結構。換言 之,模製體被安裝於下陶究基板38上,每—單元區被切割, 以形成多個H基板,多個陶基板被放人烘箱或類似設 備中。 接著,當該多個陶瓷基板經熱處理,各該陶瓷基板形 成一包括一上陶瓷基板30的陶瓷基板,其包含垂直壁面 30a及支撐體30b的上部側面,下陶瓷基板38和反射層, 彼此互相結合。反射層4〇為將陶瓷材料38經熱處理後所 固化之陶瓷材料層。 蒼照圖13之經熱處理後之陶瓷基板,由於上陶瓷基板 30 ’下陶£基板38和反射層4G均包含相同之陶曼材料, 由本發明之第二實施例所製造之陶瓷基板可為一陶瓷結合 的基板。因此,即使半導體封裝件是藉由以填充料(如透 明的石夕材料或類似材料)填充陶曼基板,仍具有將材料間 的介面分離降低至最小的優點。 圖Η至圖15係顯示一使用根據本發明之第二實施例 所製造之陶曼基板之半導體封裝件之側面剖視圖。 參考圖14。發光元件52安裝在陶瓷基板的發光元件安 裝區上,該陶瓷基板包含上陶瓷基板3〇、下陶瓷基板38和 反射層40。發光元件52可為發光二極體(LED),但本發 明則不以此為限。 13/22 201208137 安裝區是指一用以安裝發光元件 52的區域。供廊電、原 至發光元件的電極5〇a可存在於該安裝區。此外,另一電 極50b則配置於下陶瓷基板38的一部分。在本發明的所有 實施例中,下陶瓷基板38具有多個通孔形成於其上,以將 電極50a和50b與安裝半導體封裝件的基板(未顯示) ,連接’且電極50a和5〇b是形成於通孔之中。發光元件& ^透過直接接觸或引線接合方式與電極池和通電性連 參考圖14。反射層40具有向内圓形曲面。然而, 層40的形狀可藉由㈣㈣36的抽吸法或熱處理的 改變為各種形狀。 工 的反了-個具有不同於上述㈣圓料面之形狀 ㈣15°第十五圖之半導體封裝件具有與圖14之半 =狀件不同形狀的反射層42。圖15中之反射層42呈 中=3:曲面’亦即一凸狀曲面。因此,圖14和圖15 射光予=㈣爛恤峨元件52之發 半導和圖15所示之根據本發明的第二實施例的 =封可額外地將含有侧或彩色的填充料 於半導體封裝件是陶究结合的半暮。如上所述’由 間的介面分離能降低體封裝件’洲 其板軸示本㈣之製造陶究 二板的方法,及使_方法㈣造之 該陶竟基板之半導體封裝件之側面剖視圖; 土 14/22 201208137 參照圖16至圖18’該根據本發明之第三實施例之製造 陶瓷基板的方法之特徵在於:不論上陶瓷基板56以及下陶 瓷基板48均是由相同的反射陶瓷材料所製成,且相較於本 發明之第一與第二實施例中之反射層40、42和46,則並不 具有反射層。 ' ^ 也就是說,本發明之第三實施例之特徵在於:無論是 上陶瓷基板56及下陶瓷基板48均是由本發明之第一與第 二實施例中的高反射陶瓷材料所製成。 ^ 首先’如圖16和圖17所示,提供-由高反射陶究材 料所製成之上陶瓷基板56,以及包含相同材料之下陶瓷基 板48,將之堆疊與熱處理以製造如圖18所示之陶瓷基板。 因此,當提供上陶瓷基板與下陶瓷基板使得從一開始 即包含高反射材料,即可透過一無需形成反射層之簡易製 程製造高反射陶瓷基板。 S ^ 參照圖19。由於無論上下陶瓷基板允和牝均是由高 反射陶瓷材料所製成,如圖7及圖8所示之在不包括安裝 發光元件和引線接合區的區域所形成之反射層可非必要。 因此,亦可經由簡易之製程製造半導體封裝件。 以此種方式製造的半導體封裝件亦安裝具有作為發光 元件的LED晶片52。在這種情形下,ledS 201208137 is connected to the light emitting element 52 by its upper surface, and is electrically connected to the mounting semiconductor package (not shown) via its lower surface. The reflective layer 48 may be applied to the surface of the underlying substrate 38, but does not include the connection electrodes 50a# 5〇b and the region in which the ceramic substrate 44 is disposed. However, the reflective layer 48 can be formed and covered by the height of the control electrodes 5a and 5b to cover the electrode 50b, but not covering the electrode 5a. Fig. 9 through Fig. 13 show a method of manufacturing a ceramic substrate according to a second embodiment of the present invention, and a ceramic substrate produced by the method. The upper Tauman substrate was prepared by referring to A? and Fig. 9'. The upper ceramic substrate includes a cavity 3〇 and a support 30b. The cavity has a vertical wall surface 30a. Referring to the upper side surface of FIG. 9, the vertical wall surface 30a may be separated from the support body 30b. However, as shown in FIG. 9, the upper ceramic substrate 3 is permeable to simultaneously manufacture a plurality of ceramic substrates and cut each of the regions. Made in the way. The cavity is formed through the upper ceramic substrate 30. The upper ceramic substrate 30 may be formed by stacking a plurality of ceramic sheets, or may be formed of a ceramic sheet having a predetermined thickness. The cavity can be formed vertically by stamping or cutting. The support body 30b is formed on the bottom surface of the vertical wall surface 30a of the upper ceramic substrate 30 so as to protrude inward. Both the vertical wall surface 30a and the support body 30b can be made of a ceramic material such as low temperature co-fired ceramic (LTCC). As shown in Figure 9. The upper ceramic substrate 30 can be formed one by one in each cell region of a large ceramic plate. The cell area is the minimum area required to fabricate a ceramic substrate, and may include a minimum area in which the upper ceramic substrate and the lower ceramic substrate are laminated and separated from each other by cutting. Refer to Figure 10. A photomask 32 having a hole pattern is placed over the vertical wall surface 30a of the upper ceramic substrate 30. In this case 11/22 201208137, 'the reticle 32 can be installed so that it does not cover the opening of the cavity of the upper Tauman base, and then the high-reflection pottery material 36 is filled with the squeegee 34 (squeegee) The cavity formed in the upper ceramic substrate 3 is inserted. That is, the highly reflective Tauman material 36 is filled in the cavity by a printing process using the squeegee 34. The highly reflective material 36 may comprise the same ceramic material as the vertical wall surface 30a and the support body 30b constituting the upper substrate i. Thus, for example, the reflectivity of a ceramic recording plate can be improved by adding a predetermined reflective material (e.g., low temperature co-fired ceramic (LTCC)) to the end of the earth. The description of this process is the same as that of the first embodiment shown in Figs. Refer to Figure η. The reticle 32 is removed, and then the pottery: is the material 36 which is closely attached to the inner side of the vertical wall and the upper side of the branch. In other words, the central portion of the two-filled ceramic material 36 is sucked to discharge the middle portion. Therefore, as shown in Fig. 7, the ceramic material 36 remains only on the inner side of the vertical surface (the inner wall of the concave cavity) and the upper side of the support body: the ceramic material 36 will become the curved reflection layer %. The substrate 3G including the curved reflective layer 36 is manufactured by the process of FIGS. 9 to n, and is referred to as a molded body. u The molded body according to the second embodiment of the present invention can be easily formed by a highly reflective filling and suction process due to the molded body containing the curved reflective layer, as compared with the conventional === Forming process for forming a molded body: In addition, since all the formed molded bodies usually contain tantalum and are formed by a single heat treatment to form a ceramic substrate, the vertical wall surface 3〇a and the heat treatment process are performed. The ceramic material 36, as well as the interface separation between the support 12/22 201208137 body 30b and the vertical wall 30a, is minimized. See Figure 12. The molded body is placed on the flat substrate of the flattened substrate. As described above, the reticle 32 is removed in the process of FIG. 11, but the reticle 32 can be removed after the process of FIG. 12, if necessary. After the process of Figure 12, each cell area is cut and heat treated. After the heat treatment is completed, the ceramic substrate has a structure as shown in FIG. In other words, the molded body is mounted on the lower ceramic substrate 38, and each of the unit regions is cut to form a plurality of H substrates, and the plurality of ceramic substrates are placed in an oven or the like. Next, when the plurality of ceramic substrates are subjected to heat treatment, each of the ceramic substrates forms a ceramic substrate including an upper ceramic substrate 30, which includes a vertical wall surface 30a and an upper side surface of the support body 30b, a lower ceramic substrate 38 and a reflective layer, which are mutually Combine. The reflective layer 4 is a ceramic material layer which is cured by heat treatment of the ceramic material 38. The ceramic substrate after heat treatment of FIG. 13 has a ceramic substrate manufactured by the second embodiment of the present invention because the upper ceramic substrate 30' and the reflective layer 4G both contain the same ceramic material. Ceramic bonded substrate. Therefore, even if the semiconductor package is filled with a Taman substrate with a filler such as a transparent material or the like, there is an advantage that the interface separation between materials is minimized. Figure 15 to Figure 15 are side cross-sectional views showing a semiconductor package using a Tauman substrate manufactured in accordance with a second embodiment of the present invention. Refer to Figure 14. The light-emitting element 52 is mounted on a light-emitting element mounting region of the ceramic substrate, which includes an upper ceramic substrate 3, a lower ceramic substrate 38, and a reflective layer 40. The light-emitting element 52 can be a light-emitting diode (LED), but the invention is not limited thereto. 13/22 201208137 The mounting area refers to an area in which the light-emitting elements 52 are mounted. The electrode 5a of the gallery, which is originally to the light-emitting element, may be present in the mounting area. Further, the other electrode 50b is disposed on a portion of the lower ceramic substrate 38. In all embodiments of the present invention, the lower ceramic substrate 38 has a plurality of via holes formed thereon to connect the electrodes 50a and 50b with a substrate (not shown) on which the semiconductor package is mounted, and the electrodes 50a and 5b It is formed in the through hole. The light-emitting element & ^ is connected to the electrode cell and the electrification by direct contact or wire bonding. The reflective layer 40 has an inwardly rounded curved surface. However, the shape of the layer 40 can be changed to various shapes by the suction method or heat treatment of (4) (four) 36. The reverse direction of the semiconductor package having a shape different from that of the above-mentioned (four) circular surface (four) 15° fifteenth-thickness has a reflective layer 42 different in shape from the half-shaped member of FIG. The reflective layer 42 in Fig. 15 has a medium = 3: curved surface, i.e., a convex curved surface. Thus, the semi-conducting of the light-emitting elements of FIG. 14 and FIG. 15 and the second embodiment of the present invention shown in FIG. 15 may additionally include a side or color filler in the semiconductor. The package is a combination of ceramic and ceramic. As described above, the method of manufacturing the ceramic board by the intermediate interface can reduce the package of the body package, and the side view of the semiconductor package of the ceramic substrate made by the method (4); Soil 14/22 201208137 Referring to Figures 16 to 18', the method of manufacturing a ceramic substrate according to a third embodiment of the present invention is characterized in that both the upper ceramic substrate 56 and the lower ceramic substrate 48 are made of the same reflective ceramic material. It is made and has no reflective layer as compared with the reflective layers 40, 42 and 46 of the first and second embodiments of the present invention. That is, the third embodiment of the present invention is characterized in that both the upper ceramic substrate 56 and the lower ceramic substrate 48 are made of the highly reflective ceramic material of the first and second embodiments of the present invention. ^ First, as shown in Figures 16 and 17, providing - a ceramic substrate 56 made of a highly reflective ceramic material, and a ceramic substrate 48 comprising the same material, stacked and heat treated to produce as shown in Figure 18. The ceramic substrate shown. Therefore, when the upper ceramic substrate and the lower ceramic substrate are provided so as to contain the highly reflective material from the beginning, the highly reflective ceramic substrate can be manufactured by a simple process which does not require the formation of the reflective layer. S ^ Refer to Figure 19. Since both the upper and lower ceramic substrates are made of a highly reflective ceramic material, a reflective layer formed in a region excluding the mounting of the light-emitting element and the wire bonding region as shown in Figs. 7 and 8 may not be necessary. Therefore, the semiconductor package can also be manufactured through a simple process. The semiconductor package manufactured in this manner is also mounted with an LED chip 52 as a light-emitting element. In this case, led

於電極5〇a上出,並引線接合至另一電極5(J 圖2〇為傳統之半賴職倾本發日狀實施例之使用 高反射陶究基板之半導體封裝件之效應之比較圖。 參照圖20 ’第-傳統基板1〇〇為在經證實具有傾斜反 射層之狀悲下女裝半導體封裝件的陶瓷基板。 第二傳統基板2〇0為-半導體封裝基板,其係以形成 15/22 201208137 陶瓷基板,然後以高反射材料填充該陶瓷基板,以形成曲 面反射層之技術所製造。 比較採用傳統的半導體封裝生產採用第一和第二基板 100和200所製造的傳統半導體封裝件與採用依據本發明之 實施例所製造之高反射陶瓷基板300之半導體封裝件之效 能。首先,在平均總光通量(average total lumin〇us flux, average TLF)方面,相較於傳統之半導體封裝件,本發明 之半導體封裝件展現了改良的效能。因此可發現相較於傳 統之半導體封裝件,本發明之半導體封裝件之光效率有了 大幅的改良。 其次’在相關色溫(Correlated color temperature,CCT) 方面,本發明中之半導體封裝件與傳統之半導體封裝件幾The electrode 5〇a is discharged and wire-bonded to the other electrode 5 (Fig. 2A is a comparison diagram of the effect of the semiconductor package using the high-reflection ceramic substrate in the conventional embodiment. Referring to Fig. 20, the first conventional substrate 1 is a ceramic substrate of a female semiconductor package which has been confirmed to have a tilted reflective layer. The second conventional substrate 2 is a semiconductor package substrate which is formed by 15/22 201208137 Ceramic substrate, which is then fabricated by filling the ceramic substrate with a highly reflective material to form a curved reflective layer. Comparing a conventional semiconductor package to produce a conventional semiconductor package fabricated using the first and second substrates 100 and 200 The performance of a semiconductor package using a highly reflective ceramic substrate 300 fabricated in accordance with an embodiment of the present invention. First, in terms of average total luminosity flux (average TLF), compared to conventional semiconductor packages The semiconductor package of the present invention exhibits improved performance. Therefore, it can be found that the semiconductor package of the present invention is compared to a conventional semiconductor package. Has dramatically improved optical efficiency. Next 'the CCT (Correlated color temperature, CCT) aspect of the present invention, a semiconductor package of a conventional semiconductor package with several

無差別。因此,可實現相同之色彩’而可提供具改良之發 光效率之發光封裝件。 X 如圖20所示,當基板3〇〇是使用高反射陶瓷材料所製 造,接著此陶瓷基板300係應用於發光半導體封裝件,該 發光半導體封裝件在執行相同功能時可展現出高光學效 率。因此,可透過相對較少的半導體封裝件而發射出大量 的光。 圖21為一關於傳統基板之波長與根據本發明之實施例 之陶瓷基板之波長的比較圖表。(參考號11〇為一說明傳統 ,板之反射率的圖表。參考號31〇為一說明根據本發明之 貫施例的陶瓷基板之反射率的圖表。) 參考圖21,可發現相較於傳統之基板,本發明中的陶 究基板之反射率已大為提高。 在波長為800 nm的區域比較傳統基板與本發明中之陶 16/22 201208137 瓷基板的反射率,可發現傳統基板之反射率為85%,而本 發明之陶瓷基板之反射率則為95%。 尤其,在圖21之波長為800 nm的區域之反射率測量 中,係採用具有以氧化錯作為高反射材料所構成之反射層 的陶瓷基板。然而,本發明之陶瓷基板的反射率仍然受到 二氧化鈦或類似物質的影響,只要該物質是一種可被包含 於上述高反射陶瓷材料的物質。 如上所述,根據本發明,由於高反射率陶瓷材料附著 於上陶瓷基板的内壁,而形成内曲之反射層,可以不經進 行金屬電鍍製程而在短時間内極為便利地製造陶瓷基板。 此外,由於不需經金屬電鍍,故可排除光學偏差。更 進一步地,由於可製造包括以陶瓷材料為主要成分之結合 基板,即使當形成磷光層時,在螢光層和反射層之間的附 著力之間也變得非常高,從而避免了在磷光層和反射層之 間的介面分離。 以上所述者,雖然本發明的較佳實施例已揭示用以說 明本發明的目的,但熟知該技術領域者明白可能的僅為本 發明之較佳貫施例而已,當不能以此限定本發明實施之範 圍’即凡依本發明巾請專魏圍及發明說明㈣容所作之 各種修改 '增加與替代’而不偏離本發明申請專利範圍所 揭示的範圍與精神。 【圖式簡單說明】 圖1係顯示傳統LED封裝的側面剖視圖; 圖2係顯示傳統LED封農的另一側面剖視圖; 圖3至圖6係顯示根據本發明之第一實施例之製造陶 17/22 201208137 瓷基板的方法,以及利用該方法所製造之陶瓷基板; 圖7為根據本發明之第—實施例所修改之實施例的另 一陶瓷基板之側面剖視圖; •圖8係顯示利用根據本發明之第一實施例所製造之陶 . 曼基板之半導體縣件之側面剖視圖; 圖9至圖13係顯示本發明之第二實施例之製造陶究基 板的方法’以及利用該方法所製造之陶曼基板之側面剖視 圖; 圖14至圖b係顯示利用根據本發明之第二實施例所 製造之陶絲板之半導體戦件之剖視圖; 圖16至_ 19係顯不根據本發明之三實施例之製造陶 曼基板的方法’及利用該方法所製造之陶曼基板,以及利 用該陶懿板之半導體縣件之側面剖視圖; 圖20為傳統之半導體封裝件與使用本發明之實施例的 高反射陶竟基板之半導體封裝件之比較圖;以及 圖21為傳統基板之波長與根據本發明之實施例之陶瓷 基板之波長的比較圖表。 【主要元件符號說明】 10 下陶瓷基板 12 上陶瓷基板 14 電極 16 電極 18 發光二極體(LEr)) 18/22No difference. Therefore, the same color can be realized, and a light-emitting package having improved light-emitting efficiency can be provided. X As shown in FIG. 20, when the substrate 3 is fabricated using a highly reflective ceramic material, the ceramic substrate 300 is then applied to a light emitting semiconductor package which exhibits high optical efficiency when performing the same function. . Therefore, a large amount of light can be emitted through a relatively small number of semiconductor packages. Figure 21 is a graph comparing the wavelength of a conventional substrate with the wavelength of a ceramic substrate according to an embodiment of the present invention. (Refer to reference numeral 11 is a diagram illustrating the reflectance of the panel. Reference numeral 31 is a graph illustrating the reflectance of the ceramic substrate according to the embodiment of the present invention.) Referring to FIG. 21, it can be found that In the conventional substrate, the reflectivity of the ceramic substrate in the present invention has been greatly improved. Comparing the reflectance of the conventional substrate with the ceramic 16/22 201208137 porcelain substrate of the present invention in a region having a wavelength of 800 nm, it can be found that the reflectance of the conventional substrate is 85%, and the reflectance of the ceramic substrate of the present invention is 95%. . In particular, in the reflectance measurement of the region having a wavelength of 800 nm in Fig. 21, a ceramic substrate having a reflective layer composed of an oxidation fault as a highly reflective material was used. However, the reflectance of the ceramic substrate of the present invention is still affected by titanium dioxide or the like as long as the substance is a substance which can be contained in the above-mentioned highly reflective ceramic material. As described above, according to the present invention, since the high reflectance ceramic material adheres to the inner wall of the upper ceramic substrate to form the inner curved reflecting layer, the ceramic substrate can be manufactured extremely conveniently in a short time without performing the metal plating process. In addition, since metal plating is not required, optical deviation can be eliminated. Further, since a bonding substrate including a ceramic material as a main component can be manufactured, even when a phosphor layer is formed, the adhesion between the phosphor layer and the reflective layer becomes very high, thereby avoiding phosphorescence. The interface between the layer and the reflective layer is separated. The above description of the preferred embodiments of the present invention has been disclosed for the purpose of illustrating the preferred embodiments of the present invention. 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a side cross-sectional view showing a conventional LED package; FIG. 2 is another side sectional view showing a conventional LED package; FIG. 3 to FIG. 6 are diagrams showing the manufacture of a ceramic according to a first embodiment of the present invention. /22 201208137 A method of a porcelain substrate, and a ceramic substrate produced by the method; FIG. 7 is a side cross-sectional view of another ceramic substrate according to a modified embodiment of the first embodiment of the present invention; A side cross-sectional view of a semiconductor article of a ceramic substrate manufactured by a first embodiment of the present invention; and FIGS. 9 to 13 show a method of manufacturing a ceramic substrate according to a second embodiment of the present invention and a method of manufacturing the same using the method FIG. 14 to FIG. b are cross-sectional views showing a semiconductor element using a ceramic board manufactured according to a second embodiment of the present invention; FIGS. 16 to 19 are not according to the third aspect of the present invention. A method for manufacturing a Tauman substrate of an embodiment, a Tauman substrate manufactured by the method, and a side cross-sectional view of a semiconductor article using the ceramic plate; FIG. 20 is a conventional semiconductor package A comparison of a package with a semiconductor package using a highly reflective ceramic substrate of an embodiment of the present invention; and Fig. 21 is a comparison chart of wavelengths of a conventional substrate and a wavelength of a ceramic substrate according to an embodiment of the present invention. [Main component symbol description] 10 lower ceramic substrate 12 upper ceramic substrate 14 electrode 16 electrode 18 light emitting diode (LEr) 18/22

S 201208137 20 引線 22 反射層 30 上陶竞基板 30a 垂直壁面 30b 支撐體 32 光罩 34 刮漿板 36 高反射陶瓷材料 38 下陶瓷基板 40 反射層 42 反射層 44 上陶瓷基板 45 内壁 46 反射層 48 反射層 50a 電極 50b 電極 52 發光元件 56 上陶究基板 19/22S 201208137 20 lead 22 reflective layer 30 upper pottery substrate 30a vertical wall 30b support 32 photomask 34 squeegee 36 highly reflective ceramic material 38 lower ceramic substrate 40 reflective layer 42 reflective layer 44 upper ceramic substrate 45 inner wall 46 reflective layer 48 Reflective layer 50a electrode 50b electrode 52 light-emitting element 56 on the substrate 19/22

Claims (1)

201208137 七 1. 申請專利範圍: 一種製造陶瓷基板的方法,其包含: 製備具有内壁之凹腔貫穿形成於其中的上 中該内壁係、以預定的角度向下陶£基板鱗f基板,其 以陶究材料塗布該凹腔之内伽形成反射層; 於下陶£基板上配置模製體,其巾簡製 瓷基板與反射層;以及 τ 、包含上陶 =理下㈣基板域製體⑽合下_騎與模製 ^SL 2. 如申請專利範圍帛!項之方法,其進一步包含: 材料塗布於下陶錄板之上表面上,但不包括配置模Ϊ 體之區域。 3. 一種製造陶瓷基板之方法,其包含: 以陶究材料填充凹腔,該凹腔貫穿形成於包含支撐體之 上陶曼基板之中,其中位於該上喊基板之底部之該支 樓體係由喊材料製成,並由該凹腔之内壁向内突出, 以抽氣裝置除去填充於該凹㈣之喊材料以形成反射 層,其中献射層係殘留於該凹腔之内壁之喊材料且 為支撐體之上部側面; 方;忒下陶瓷基板上配置該模製體,其中該模製體包含該 上陶瓷基板以及該反射層;以及 熱處理釘陶錄板及模製體以結合該下喊基板和該 模製體。 4. 如申請專利範圍第3項之方法,其中該反射層具有向内 之圓形曲面。 20/22 S 201208137 5·如申請專利範圍第j項或第 6以Γ下陶編係由相同之陶麵所^陶究 ::由輸末、及自由二氧化鈦、二氧化結、與ί: =所構成群組帽出的至少—種之混合物。、飞匕 ‘—種製造陶瓷基板的方法,其包含: :備具有内壁之凹腔貫穿形成於:中的上陶究基板,发 中该内壁係以預定的岐向下陶£基板傾斜;'、 於該下陶兗基板上設置該上陶竟基板;以及 熱處理該上Ρ㈤基板與該下.基板以結合 板與該上陶瓷基板; 下门文基 其中該上陶錄板以及該下卩⑼基板係由 所製成:該反射陶:細係為陶舰、及自由= 鈦-氧化鍅、與氧化鋅所構成群組中選出的至少一 之混合物。 & 8. 一種半導體封裂件,其包含: 具有内壁之凹腔貫穿形成於其巾的陶£基板,其中該内 壁係以預定的角度向該陶餘板之底面傾斜;" 安裝於該凹腔内之發光元件; 塗布於該内壁上之陶瓷材料; 10. 其中_瓷材料係陶究粉末及自由二氧化鈦、二氣化 結、與氧化辞所構成群組中選出的至少—種之混合物。 如申清專利範圍第8項之半導體封裝件,其進—步 塗布於4凹腔之底面上之陶曼材料。 一種半導體封裝件,其包含: 21/22 201208137 具有内壁之凹腔貫穿形成於其中的陶瓷基板,其中該内 壁係垂直於該陶瓷基板之底面; 安裝於該凹腔之發光元件;及 反射層,其由陶瓷材料所製成且形成於該凹腔之内壁及 底面並覆蓋除發光元件之安裝區及引線接合區以外區 域。 11. 如申請專利範圍第10項之半導體封裝件,其中該陶瓷材 料係由陶瓷粉末及自由二氧化鈦、二氧化鍅、與氧化鋅 所構成群組中選出的至少一種之混合物。 12. 如申請專利範圍第10項之半導體封裝件,其中該反射層 具有向内之圓形曲面。 13. —種半導體封裝件,其包含: 具有内壁之凹腔貫穿形成於其中的陶瓷基板,其中該内 壁係以預定的角度向該陶瓷基板之底面傾斜;以及 一安裝於該凹腔之發光元件安裝區之發光元件; 其中該陶瓷基板整體係由反射陶瓷材料所製成,該反射 陶瓷材料係為陶瓷粉末、及自由二氧化鈦、二氧化錯、 與氧化鋅所構成群組中選出的至少一種之混合物。 22/22 S201208137 VII 1. Patent application scope: A method for manufacturing a ceramic substrate, comprising: preparing a cavity having an inner wall through which an inner wall system is formed, and the substrate scale is downwardly projected at a predetermined angle, The ceramic material is coated with the inner cavity of the cavity to form a reflective layer; the molded body is disposed on the lower substrate, the ceramic substrate and the reflective layer are formed by the towel; and the τ, including the upper ceramic = the lower (four) substrate domain body (10) Combine _ riding and molding ^SL 2. If you apply for a patent scope! The method of the method further comprising: coating the material on the upper surface of the lower ceramic recording board, but excluding the area in which the mold body is disposed. A method of manufacturing a ceramic substrate, comprising: filling a cavity with a ceramic material, the cavity being formed in a Tauman substrate including a support body, wherein the branch system at the bottom of the upper substrate Made of shouting material and protruding inwardly from the inner wall of the cavity, the scavenging material filled in the concave (four) is removed by an air suction device to form a reflective layer, wherein the radiation layer remains on the inner wall of the cavity And the upper side of the support; the molded body is disposed on the underarm ceramic substrate, wherein the molded body comprises the upper ceramic substrate and the reflective layer; and the heat-changing ceramic plate and the molded body are combined to bond the lower portion Shout the substrate and the molded body. 4. The method of claim 3, wherein the reflective layer has an inwardly curved surface. 20/22 S 201208137 5·If you apply for the scope of the patent, the jth or the sixth pottery is made up of the same ceramic surface: from the end, and free titanium dioxide, dioxide, and ί: = At least a mixture of the groups that make up the group. , a method for manufacturing a ceramic substrate, comprising: a cavity having an inner wall penetrating through an upper ceramic substrate formed in the middle, wherein the inner wall is inclined with a predetermined crucible; Providing the upper ceramic substrate on the lower ceramic substrate; and heat treating the upper (5) substrate and the lower substrate to bond the upper ceramic substrate; the lower door base, wherein the upper ceramic plate and the lower jaw (9) The substrate is made of: the reflective ceramic: the fine system is a mixture of a ceramic ship, and at least one selected from the group consisting of free = titanium-cerium oxide and zinc oxide. & 8. A semiconductor sealing member, comprising: a cavity having an inner wall penetrating through a substrate formed on a napkin thereof, wherein the inner wall is inclined at a predetermined angle toward a bottom surface of the ceramic plate; " mounted on the a light-emitting element in the cavity; a ceramic material coated on the inner wall; 10. wherein the porcelain material is a mixture of ceramic powder and at least one selected from the group consisting of free titanium dioxide, two gasification, and oxidation . For example, the semiconductor package of claim 8 of the patent scope is further coated with a Tauman material on the bottom surface of the 4 cavity. A semiconductor package comprising: 21/22 201208137 a cavity having an inner wall penetrating through a ceramic substrate formed therein, wherein the inner wall is perpendicular to a bottom surface of the ceramic substrate; a light-emitting element mounted on the cavity; and a reflective layer, It is made of a ceramic material and is formed on the inner and bottom surfaces of the cavity and covers a region other than the mounting region and the wire bonding region of the light-emitting element. 11. The semiconductor package of claim 10, wherein the ceramic material is a mixture of ceramic powder and at least one selected from the group consisting of free titanium dioxide, ceria, and zinc oxide. 12. The semiconductor package of claim 10, wherein the reflective layer has an inwardly curved surface. 13. A semiconductor package comprising: a ceramic substrate having an inner wall through which a ceramic substrate is formed, wherein the inner wall is inclined at a predetermined angle toward a bottom surface of the ceramic substrate; and a light emitting element mounted to the cavity a light-emitting element of the mounting area; wherein the ceramic substrate is entirely made of a reflective ceramic material, which is a ceramic powder, and at least one selected from the group consisting of free titanium dioxide, dioxins, and zinc oxide. mixture. 22/22 S
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