TW201200562A - Light-curable vinyl-fluoro-siloxane oligomer and antireflection coating composition containing the same - Google Patents

Light-curable vinyl-fluoro-siloxane oligomer and antireflection coating composition containing the same Download PDF

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TW201200562A
TW201200562A TW99121426A TW99121426A TW201200562A TW 201200562 A TW201200562 A TW 201200562A TW 99121426 A TW99121426 A TW 99121426A TW 99121426 A TW99121426 A TW 99121426A TW 201200562 A TW201200562 A TW 201200562A
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Taiwan
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group
oligomer
coating composition
photoactive
compound represented
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TW99121426A
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Chinese (zh)
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Chang-Jian Weng
Shih-Pin Lin
Ming-Huei Chen
Chin-Sung Chen
Chih-Jen Chen
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Daxon Technology Inc
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Abstract

An oligomer having an inorganic silicon-oxygen backbone and having vinyl groups and fluoride groups for serving as an oligomer in an light-curable antireflection coating composition. Organic molecules with a fluoro group having a relatively low refraction index may be additionally added to serve as a reactive monomer. The light-cured antireflection film formed by utilizing such composition has excellent physical properties and low reflectance.

Description

201200562 六、發明說明: 【發明所屬之技術領域】 本發明有關一種用於製造抗反射塗層的化合物,及特別是一種 光活性乙稀基氟基石夕氧化物之寡聚物及含有此寡聚物的塗料組合 物,俾用以製成抗反射薄膜。 【先前技術】 鲁 抗反射薄膜(或稱為低反射薄膜(low reflection film))常被使用於 光學元件或顯示裝置之顯示器中,以降低光反射率,提升顯示效果。 習知抗反射薄膜含有含氟化合物。因為氟化物薄膜的折射率比基材 低,並且所反射的光線與其下層硬鍍層(har(jcoat/HC)所反射的光線 的相位差可達到180。,兩界面的反射光線可因此而形成破壞性干 涉’達到降低光反射的目的。 • 中華民國專利第1251615號揭露具有奈米結構之低反射率薄 膜,其原理是利用在薄膜表面做出雕紋等結構變化,進而使折射率 產生變化。然而,此法在製程上較為繁瑣且成本較高。另外,在美 國專利申請案公開號US2006/0099407中揭露,將奈米粒子表面上改 質為具有反應性的末端官能基之後,再藉由奈米粒子相互堆疊所形 成之孔隙,而製成低反射率薄膜。但此薄膜霧度值(haze)較高,且因 結構中孔隙較多而容易造成結構鬆散,導致耐磨耗等物性不足。 201200562 在日本專利特開昭61姻5及特公平6·_中揭露了塗佈氟 化烧基魏或具特定結構之氟系聚合物之方法 。然而添加過量的敦 素化合物往往導致滋潤效果差與_物性的不足。在美國專利第 6,47。2,012號中揭露另一低光反射率薄膜製造方法,製程甲需要經過 420〇C的高溫處理,料適於_在如偏紐等不耐高溫之基板上。 美國專利第6,773,121號t則揭露財用⑽細容膠·凝膠(s〇l ge丨) 前驅物單雜含魏基魏絲等賴進行健的轉·凝膠反應 以製成抗反射薄膜;所得的細的抗反雜度並㈣想。美國專利 申請案公開第2G07/0172763號中揭露以單純有機分子如綠烧基碳 酸基或是含氟基的乙料體來做光固化反應,制—抗反射薄膜, 其物性不如熱’佳。±述此料知抗反射或低歧射率材料,雖 然含有氟化物以降低折射率’但其折射率仍有14或〗5這樣高。 因此,仍需要一種新穎的成分供製造具有更低折射率的抗反射 薄膜,但仍能具有適當的硬度及耐磨耗等物性。 【發明内容】 本發明之一目的是提供一種抗反射塗料組合物及其所含的光活 性乙烯基氟基矽氧化物之寡聚物,使用此種抗反射塗料組合物形成 的塗層固化後所形成的抗反射薄膜具有良好的低反射率、及霧度 值、硬度及與下層的附著性。 依據本發明的光活性乙烯基氟基矽氧化物之寡聚物,包括下列 201200562 化學式(I)表示的化合物、化學式(π)表示的化合物、與化學式(III)表 示的化合物的一反應產物:201200562 VI. Description of the Invention: [Technical Field] The present invention relates to a compound for producing an anti-reflective coating, and particularly to an oligomer of a photoactive ethylene fluorocarbazone oxide and containing the oligomer The coating composition of the article is used to form an antireflection film. [Prior Art] A Lu anti-reflective film (also referred to as a low reflection film) is often used in a display of an optical element or a display device to reduce light reflectance and enhance display. Conventional antireflective films contain a fluorine-containing compound. Because the refractive index of the fluoride film is lower than that of the substrate, and the phase difference between the reflected light and the light reflected by the underlying hard coating (har (jcoat/HC) can reach 180., the reflected light at the two interfaces can be destroyed. Sexual interference 'is achieved the purpose of reducing light reflection. · Republic of China Patent No. 1251615 discloses a low reflectivity film having a nanostructure, the principle of which is to make a structural change such as engraving on the surface of the film, thereby causing a change in refractive index. However, this method is cumbersome and costly in the process. In addition, it is disclosed in U.S. Patent Application Publication No. US2006/0099407, after modifying the surface of the nanoparticle to a reactive terminal functional group, The rice particles are stacked on each other to form a low-reflectivity film, but the film has a high haze value, and the structure is loose due to a large number of pores in the structure, resulting in insufficient physical properties such as wear resistance. 201200562 A method of coating a fluorinated or a fluorine-based polymer having a specific structure is disclosed in Japanese Patent Laid-Open No. SHO 61 and Special Essence 6. The amount of the Duncan compound often leads to a poor moisturizing effect and a lack of physical properties. Another low-light reflectance film manufacturing method is disclosed in U.S. Patent No. 6,47, 2,012, which requires a high temperature treatment of 420 〇C. Suitable for _ on substrates that are not resistant to high temperatures such as eccentricity. U.S. Patent No. 6,773,121 t discloses financial use (10) fine gel/gel (s〇l ge丨) precursor mono-containing Wei-wei weiss The anti-reflective film is prepared by the kinetic conversion of the gel; the anti-reflective film is obtained; and the fine anti-anti-aliasing is obtained, and the organic compound, such as green-burning carbonic acid, is disclosed in U.S. Patent Application Publication No. 2G07/0172763. The base or the fluorine-containing ethylene material is used for the photocuring reaction, and the anti-reflective film is not as good as the heat. It is known that the anti-reflection or low-fragility material contains fluoride to reduce the refraction. The rate 'but its refractive index is still as high as 14 or 〖5. Therefore, there is still a need for a novel composition for producing an antireflection film having a lower refractive index, but still having appropriate physical properties such as hardness and wear resistance. SUMMARY OF THE INVENTION One object of the present invention is to provide Antireflective coating composition and oligomer of photoactive vinyl fluoride-based cerium oxide contained therein, the antireflection film formed by curing the coating formed by using the antireflective coating composition has good low reflection Rate, and haze value, hardness, and adhesion to the underlayer. The oligomer of the photoactive vinyl fluoride-based ruthenium oxide according to the present invention includes the following compound represented by the chemical formula (I): 201200562, represented by the chemical formula (π) a reaction product of a compound and a compound represented by the formula (III):

RORO

Γ OR -Si——0 OR xΓ OR -Si -0 OR x

OR Si—OR OR (I)OR Si-OR OR (I)

H2C=cH2C=c

OR Si-〇 R (II) OR 0 - _ 0 -C— 一 0- 一 -ch2- —Si - Z _ y 〇 (III)OR Si-〇 R (II) OR 0 - _ 0 -C—一 0-一 —ch2- —Si — Z _ y 〇 (III)

其中各R係獨立選自曱基、乙基、及丙基所組成的組群,R,係選自 氫、曱基、及乙基所組成的組群,X為〇至17之整數,„!為1至 1〇之整數,η為1至7之整數,Z為0或1,及y為〇至5之整數。 依據本發明之抗反射塗料組合物,包括如上述之光活性乙烯基 氟基矽氧化物之寡聚物、光起始劑、與稀釋溶劑。 本發明是以具有乙烯基(vinyl group)及氟基的無機矽氧為主幹 201200562 的寡聚物做為抗反射塗料組合_寡聚物,或可進—步添加折射率 較低的有機含氣基的分子來當作反應單體。使岐樣敝合物所形 成的光固化型抗反射薄膜,具有良好物性與低反射率。 【實施方式】 依據本發明之抗反料組合物,包括具有絲性的乙稀錄 基矽氧化物之寡聚物、光起始劑、與稀釋溶劑,並可進一步包括具 有光活性之氟基之反應單體。 具有光活性的乙烯基氟基矽氧化物之寡聚物係以下列結構, 即,化學式(I)表示的化合物、化學式(II)表示的化合物、與化學式(即 表示的化合物所反應得到的產物之一。Wherein each R is independently selected from the group consisting of a decyl group, an ethyl group, and a propyl group, and R is selected from the group consisting of hydrogen, a thiol group, and an ethyl group, and X is an integer from 〇 to 17, „ Is an integer from 1 to 1 ,, η is an integer from 1 to 7, Z is 0 or 1, and y is an integer from 〇 to 5. The antireflective coating composition according to the present invention comprises a photoactive vinyl as described above An oligomer of a fluorine-based ruthenium oxide, a photoinitiator, and a diluent solvent. The present invention uses an oligomer of inorganic oxime having a vinyl group and a fluorine group as the anti-reflective coating combination of 201200562. _ oligomer, or can further add a lower refractive index of the organic gas-containing molecule as a reactive monomer. The photocurable antireflective film formed by the ruthenium-like complex has good physical properties and low [Embodiment] The anti-reflective composition according to the present invention comprises an oligomer having a silky ethyl sulfonium ruthenium oxide, a photoinitiator, and a diluent solvent, and may further include photoactive activity. a fluorine-based reaction monomer. The photoactive vinyl fluoride-based ruthenium oxide oligomer is One product was a compound, the compound represented by formula (II), and the chemical structure of Formula column, i.e., represented by the formula (I) (i.e. as represented by the reaction.

OROR

OROR

RORO

Si--〇 _Si--〇 _

OROR

-Si-OR x-Si-OR x

OR (I) 至 式中各R係獨立選自曱基、乙基、及丙基所組成的組群。\為〇 17之整數,但考量所形成的抗反射薄膜的性質,三或更多個石夕的石夕 氧化合物形成的寡聚物,會使得所製得的抗反射薄膜的物性較佳, 因此X較佳為3至17之整數。 201200562OR (I) wherein each R is independently selected from the group consisting of a thiol group, an ethyl group, and a propyl group. \ is an integer of 〇17, but considering the properties of the antireflection film formed, three or more oligomers formed by the shixi oxygen compound, the physical properties of the obtained antireflection film are better. Therefore, X is preferably an integer of from 3 to 17. 201200562

OROR

f3c CF2---CH2--Si-OR m n 〇R (Π) 式中’各R係獨立選自曱基、乙基、及丙基所組成的組群,111為1 至10、較佳為2至7之整數,n為1至7、較佳為2至5之整數。F3c CF2---CH2--Si-OR mn 〇R (Π) wherein each R is independently selected from the group consisting of a thiol group, an ethyl group, and a propyl group, and 111 is from 1 to 10, preferably An integer from 2 to 7, wherein n is an integer from 1 to 7, preferably from 2 to 5.

H2C=c 「0 - 0 —C-〇- 一 -CH2· —Si - · Ζ _ y 〇 (ΠΙ) 式中各R係獨立選自曱基、乙基、及丙基所組成的組群,r,係選自 氫、甲基、及乙基所組成的組群,2為〇或卜及y為〇至5之整 數0 以上三種結構可以以任意比例進行溶膠凝膠(sol-gel)反應,可得 到如本發明之具有光活性的乙烯基氟基矽氧化物之寡聚物。較佳, 以化學式(I)絲的化合物、靴學邮)麵的化合物、與以化學式 (III)表不的化合物三者的反應莫耳數比可為例如(2〜5) (3〜幻幻〜”。 首先’將化學式(I)表示的化合物及化學式(π)表示的化合物,在起始 劑存在下’進行聚合反應,形成團簇’其伽辦氧為主幹的網狀結 構八有良好的物性表現,而化學式(π)表示的化合物中的含氟院基 會成為團__ ’具有降低折射率的效果。之後,再加入化學^ 201200562 (III)表示的化合物與此聚合反應形成的團簇繼續進行反應即可妒 成依據本發明的光活性乙烯基氟基矽氧化物之寡聚物。如此,寡聚 物外圍可具有乙稀鍵或丙嫦醯鍵的端基,募聚物内部即是以石夕氧為 主幹的網狀結構。寡聚物的分子量較佳在1000至5〇〇〇〇的範圍,分 子量太大的時候,折射率變大,太小的時候無法成膜。乙烯鍵或丙 烯醯鍵在形成塗層的後續反應中,可做為光反應中提供交聯的官能 基,以使塗層固化。 於抗反射塗料組合物中,可進一步包括具有光活性之氟基之反 應單體,例如具有可行光固化反應的含氟基烷類之乙烯基單體或含 氟基之壓克力系列單體》可使所形成的抗反射薄膜具有更低的折射 率,而獲得更低的光反射率。 上述具有光活性的乙烯基氟基矽氧化物之寡聚物中的化學式(π) 表示的化合物及進一步所包括的具有光活性之氟基之反應單體於抗 反射塗料組合物中的量’會影響所形成的抗反射薄膜的折射率及支 撐強度,所以其添加比例會因應所要加諸於抗反射薄膜的性質而有 所變化。例如’其量增加時可以降低所形成的抗反射薄膜的折射率, 而獲得更低的光反射率,卻相對的會使材料的耐磨耗物性下降,或 降低材料整體的支撐強度。因此,二者於抗反射塗料組合物中的含 量是一種平衡設計’可依所需而定。 光起始劑為使光活性的乙烯基氟基矽氧化物之寡聚物進行光固 201200562 化反應、或是使光活性的乙烯基氟基矽氧化物之寡聚物與具有光活 性之氟基之反應單體一起進行光固化反應所需。適合的光起始劑為 自由基型’其添加量約為反應單體的1重量百分比至1〇重量百分比 之間’例如CIBA公司常被應用於光固化塗料的一系列產品,如 Chivacure 173與Chivacure 115產品,或如第1圖所示之產品。 適合的稀釋溶劑可為例如異丙_(is〇pr〇pyl acetone,IPA)、甲義 異丁酮(methyl isobutyl ketone ’ MIBK)、醋酸乙醋(ethyi acetate, EAC)、醋酸丁酯(butyl acetate,BAC)、曱苯(t〇luene)、環己_ (cyclohexanone)、甲醇(methanol)或丙二醇曱基醚醋酸酯(pr〇pylene glycol monoethyl ether acetate’PGMA)的有機溶劑或是上述兩種以上 之溶劑以任意比例相混合而成,但並不限於此,只要是溶劑不導致 相分離、具相容性、及較佳具低揮發性,並可使組合物成分達到分 散效果,形成的抗反射薄膜潤濕性尚可的話,均可以使用。稀釋溶 劑於抗反射塗料組合物中的量,可為例如9〇wt% 99wt%。 將上述光活性乙烯基氟基矽氧化物之寡聚物、具有光活性之氟 基之反應單體(若有包括的話)、光起始劑、及稀釋溶劑混合,即可 獲得如本發明之抗反射塗料組合物。 ―與本發明之抗反射塗料組合物適用於需要抗反射層的場合,例如 光學元件_示裝置之齡⑽螢幕。通常於-基板,例如一透明 基板,上先形成一硬鍵層,再將抗反射塗料組合物的塗液塗佈於硬 201200562 鑛層上’經過照光固化成膜。抗反射塗料組合物塗佈的厚度可依欲 防止反射的光線波長而定,如此以特定膜厚塗佈在透明塑膠基材 上,可達到降低光線反射的效果。 下列舉出實例分別說明依據本發明之光活性乙烯基氟基矽氧化 物之寡聚物及抗反射塗料組合物之製作,但本發明可供各種不同的 廣泛領域應用’因此,實施例僅是用來說明製作及使用本發明的具 體實施方式,並不用以限制本發明。 實例 實例1乙烯基氟基矽氧化物之寡聚物之合成 請參考第2圖’將25克(g)日本COLCOAT公司製造的石夕酸乙 酯48 (Ethyl-Silicate 48)與25克(十三敦-1,1,2,2-四氫辛基)三曱氧基 石夕烧((tridecafluoro-1,1,2,2-tetrahydrooctyl)trimethoxysilane)加入裝有 100克做為反應溶劑的異丙醇(isopropano卜IPA)與35克0.1N的HC1 水溶液的反應瓶中’於室溫下以攪拌器攪拌30分鐘直到完全均相為 止’再將均相的透明溶液於90°C的反應溫度下持續反應5小時之後 降至室溫,加入2克的預先水解完成之乙烯基三曱氧矽烷 (vinyltrimethoxysilane),持續在室溫下攪拌24小時,最後以〇.45y m細孔尺寸之微過濾器過濾所得到的溶液即為含有光活性乙烯基氟 基矽氧化物之寡聚物的溶液,收集後冷藏備用。 實例2抗反射塗料組合物之製造 201200562 將30克濃度為l〇 wt%的光活性乙烯基氟基矽氧化物之寡聚物 溶液、10克LightEsterM-3F(為一種氟基壓克力單體,日本共榮社 化學股份有限公司(Kyoeisha Chemical Co. Ltd.)產品)(40克異丙 醇、及20克丁醇置於容器中攪拌,並加入3克的Chivacure 173與 1克的Chivacure 115做為起始劑,形成依據本發明的抗反射塗料組 合物。 實例3抗反射塗料組合物之製造 將30克濃度為1〇 wt%的光活性乙烯基氟基石夕氧化物之寡聚物 溶液、10克Linc-102A(為一種氟基壓克力單體,日本共榮社化學股 份有限公司產品)、40克異丙醇、及20克丁醇置於容器中攪拌, 並加入3克的Chivacure 173與1克的Chivacure 115做為起始劑, 形成依據本發明的抗反射塗料組合物。 實例4抗反射塗料組合物之製造 將30克濃度為1〇 wt%的光活性乙烯基氟基矽氧化物之寡聚物 溶液、40克異丙醇、及20克丁醇置於容器中,並加入3克的Chivacure 173與1克的Chivacure 115做為起始劑,形成依據本發明的抗反射 塗料組合物。 比較例 取10克的六官能基聚氨酯丙烯酸酯UA-306A(曰本共榮社化學 股份有限公司產品)、10克的Light Ester M-3F、及60克的異丙醇, 201200562 並加入3克的Chivacure 173與1克的Chivacure 115做為起始劑, 形成一組合物,供比較之用。 實例5抗反射薄膜的形成 先進行塗佈基材前處理。即,在TAC (三醋酸纖維素)基材上先 塗佈一層厚度約5至6/zm的硬鍍層,為了提高抗反射塗層與硬鑛 層材料間的潤濕性(wetting),在塗佈抗反射塗層前需將TAC/HC (三 醋酸纖維素/硬鍍層)浸泡於55°C濃度約8%的氫氧化鉀(KOH)水溶 液中1至2分鐘,然後以純水反覆沖洗數次,最後以循環烘箱乾燥鲁 後備用。 然後,分別將實例2至4的依據本發明的抗反射塗料組合物及 比較例的組合物在室溫下授拌1〇分鐘後以4號線棒塗佈在預先處理 好的基材上’置入80 C的焕箱供烤2分鐘,然後以能量約6〇〇mj/cm2 的紫外光進行固化約10秒,可得到抗反射薄膜。 測試例 鲁 1.反射率測定: 將上述獲得的抗反射薄膜背面(丁八(:面)以黑色喷漆噴黑之後, 以型號為U-4100 (日本日立公司)的uv光譜儀量測波長在 380nm〜780nm之間的入射光於5。角的分光反射率。 2.光穿透率與霧度值: 12 201200562 將各抗反射薄膜直接以霧度計(Haze meter) NDH2000 (日本電 色工業株式會社(Nippon Denshoku)製造)來測試。 3. 附著性測定: 遵照JISK-6801之標準測試方法測定各抗反射薄膜的附著性。 4. 鉛筆硬度測定 以硬度測定儀 Scratch Hardness Tester Model 291 (德國 • ERICHSEN)來測試各抗反射薄膜的硬度。測定時所使用的荷重為 500克,鉛筆硬度為3Η。 5.測定結果 表1H2C=c "0"0 - 0 -C-〇-一-CH2·-Si - · Ζ _ y 〇(ΠΙ) wherein each R is independently selected from the group consisting of a thiol group, an ethyl group, and a propyl group. r, is selected from the group consisting of hydrogen, methyl, and ethyl, 2 is 〇 or 卜 and y is 整数 to the integer 0 of 5. The above three structures can be sol-gel reaction at any ratio. An oligomer of a photoactive vinyl fluoride-based ruthenium oxide according to the present invention can be obtained. Preferably, a compound of the formula (I), a compound of the formula, and a formula (III) The molar ratio of the reaction of the three compounds may be, for example, (2 to 5) (3 to illusion ~). First, the compound represented by the chemical formula (I) and the compound represented by the chemical formula (π) are used as the initiator. In the presence of 'polymerization, forming clusters', the network structure of the galvanic oxygen is a good physical property, and the fluorine-containing compound in the compound represented by the chemical formula (π) becomes a group __' The effect of the refractive index. After that, the compound represented by the chemical ^ 201200562 (III) is added to the cluster formed by the polymerization reaction to continue the reaction. The oligomer of the photoactive vinyl fluoride-based ruthenium oxide according to the present invention can be formed. Thus, the periphery of the oligomer can have a terminal group of a ethyl bond or a propylene bond, and the inside of the polymer is a stone. The network structure of the oxy-oxygen is the main structure. The molecular weight of the oligomer is preferably in the range of 1000 to 5 Å, and when the molecular weight is too large, the refractive index becomes large, and when it is too small, film formation is impossible. The ruthenium bond may serve as a functional group for providing crosslinking in the photoreaction in the subsequent reaction for forming the coating to cure the coating. In the antireflective coating composition, a reaction sheet having a photoactive fluorine group may be further included. A body such as a vinyl monomer having a fluorine-containing alkyl group or a fluorine-containing acrylic monomer having a photocurable reaction can make the formed antireflection film have a lower refractive index and obtain a lower refractive index. Light reflectance. The compound represented by the chemical formula (π) in the above-mentioned oligomer of the photoactive vinyl fluoride-based ruthenium oxide and the further reacting monomer having a photoactive fluorine group in the antireflective coating composition The amount in the matter will affect the The refractive index and the supporting strength of the antireflection film, so the addition ratio varies depending on the properties to be applied to the antireflection film. For example, when the amount thereof is increased, the refractive index of the formed antireflection film can be lowered. Obtaining a lower light reflectivity, but relatively reducing the wear resistance of the material, or reducing the overall support strength of the material. Therefore, the content of the two in the anti-reflective coating composition is a balanced design The photoinitiator is a photocuring 201200562 reaction of an oligomer of a photoactive vinyl fluoride ruthenium oxide or an oligomer of a photoactive vinyl fluoride ruthenium oxide. The photoactive fluorine-based reaction monomer is required to carry out a photocuring reaction together. A suitable photoinitiator is a radical type which is added in an amount of from about 1% by weight to about 1% by weight of the reactive monomer'. CIBA is often used in a range of products for photocurable coatings, such as Chivacure 173 and Chivacure 115, or as shown in Figure 1. Suitable diluent solvents can be, for example, isopropyl (is〇pr〇pyl acetone, IPA), methyl isobutyl ketone 'MIBK, ethyi acetate ( EAC), butyl acetate , BAC), t〇luene, cyclohexanone, methanol or pr〇pylene glycol monoethyl ether acetate (PGMA) or both The solvent is mixed in any ratio, but is not limited thereto, as long as the solvent does not cause phase separation, compatibility, and preferably has low volatility, and the composition component can be dispersed, and the formed resistance The wettability of the reflective film can be used if it is acceptable. The amount of the solvent to be diluted in the antireflective coating composition may be, for example, 9 Å by weight and 99% by weight. By mixing the oligomer of the above photoactive vinyl fluoride ruthenium oxide, the reactive monomer having a photoactive fluorine group (if included), a photoinitiator, and a diluent solvent, the present invention can be obtained. Anti-reflective coating composition. The anti-reflective coating composition of the present invention is suitable for use in applications where an anti-reflective layer is required, such as an optical element-indicator (10) screen. Usually, a hard bonding layer is formed on a substrate, for example, a transparent substrate, and the coating liquid of the antireflective coating composition is applied to the hard 201200562 ore layer to form a film by photocuring. The thickness of the anti-reflective coating composition can be varied depending on the wavelength of the light to be reflected, so that a specific film thickness is applied to the transparent plastic substrate to reduce the reflection of light. The following examples illustrate the fabrication of oligomers and antireflective coating compositions of photoactive vinyl fluoride-based cerium oxides according to the present invention, but the present invention can be applied to a wide variety of different fields. Thus, the examples are only The specific embodiments used to illustrate and make the invention are not intended to limit the invention. EXAMPLES Example 1 Synthesis of oligomers of vinyl fluoride ruthenium oxide Please refer to Fig. 2 '25 g (g) Ethyl-Silicate 48 and 25 g (10) manufactured by Japan COLCOAT Co., Ltd. Tridragon-1,1,2,2-tetrahydrooctyl)tridecafluoro-1,1,2,2-tetrahydrooctyltrimethoxysilane is added to 100 grams of isopropyl solvent as a reaction solvent. Alcohol (isopropano IPA) and 35 g of 0.1 N aqueous HCl solution in a reaction flask 'stirred at room temperature for 30 minutes with a stirrer until completely homogeneous' and then homogenous clear solution at 90 ° C reaction temperature After continuous reaction for 5 hours, the temperature was lowered to room temperature, and 2 g of pre-hydrolyzed vinyltrimethoxysilane was added, and the mixture was continuously stirred at room temperature for 24 hours, and finally a microfilter having a pore size of 〇.45 μm was finally used. The solution obtained by filtration is a solution containing an oligomer of a photoactive vinyl fluoride-based cerium oxide, which is collected and then refrigerated for use. Example 2 Manufacture of Antireflective Coating Composition 201200562 30 g of an oligomer solution of a photoactive vinyl fluoride ruthenium oxide having a concentration of 10% by weight, 10 g of LightEster M-3F (a fluorine-based acrylic monomer) , product of Kyoeisha Chemical Co. Ltd. (40 g of isopropyl alcohol, and 20 g of butanol were stirred in a container, and 3 g of Chivacure 173 and 1 g of Chivacure 115 were added. As an initiator, an antireflective coating composition according to the present invention is formed. Example 3 Production of Antireflective Coating Composition 30 g of a photoactive vinyl fluorobase oxide oligomer solution having a concentration of 1 〇 wt% 10 g of Linc-102A (a fluorine-based acrylic monomer, product of Kyoeisha Chemical Co., Ltd.), 40 g of isopropyl alcohol, and 20 g of butanol were placed in a container and stirred, and 3 g of Chivacure 173 and 1 gram of Chivacure 115 were used as initiators to form an antireflective coating composition according to the present invention. Example 4 Production of Antireflective Coating Composition 30 g of a photoactive vinyl fluoride group having a concentration of 1% by weight Oxide oligomer solution, 40 g of isopropanol And 20 g of butanol were placed in a container, and 3 g of Chivacure 173 and 1 g of Chivacure 115 were added as a starting agent to form an antireflective coating composition according to the present invention. Comparative Example 10 g of a hexafunctional group was used. Polyurethane acrylate UA-306A (product of Sakamoto Kyoritsu Chemical Co., Ltd.), 10 g of Light Ester M-3F, and 60 g of isopropyl alcohol, 201200562 and adding 3 grams of Chivacure 173 and 1 gram of Chivacure 115 As a starter, a composition is formed for comparison. Example 5 The formation of the antireflection film is first performed on the coated substrate. That is, a layer of thickness is applied to the TAC (triacetate) substrate. Hard coating of about 5 to 6/zm, in order to improve the wetting between the anti-reflective coating and the hard ore layer material, TAC/HC (triacetate/hard) is required before coating the anti-reflective coating. The coating layer is immersed in an aqueous solution of potassium hydroxide (KOH) at a concentration of about 8% at 55 ° C for 1 to 2 minutes, then rinsed several times with pure water, and finally dried in a circulating oven for use. Then, Example 2 is respectively The antireflective coating composition according to the present invention and the composition of the comparative example are in the chamber After mixing for 1 minute, apply a 4 wire bar to the pre-treated substrate. Place the 80 C box for 2 minutes, then use UV light with an energy of about 6 〇〇mj/cm2. After curing for about 10 seconds, an antireflection film can be obtained. Test Example Lu 1. Measurement of reflectance: The back surface of the antireflection film obtained above (Dingba (: face) is sprayed with black paint, and the model number is U-4100 (Japan) Hitachi's uv spectrometer measures incident light with a wavelength between 380 nm and 780 nm at 5. The spectral reflectance of the angle. 2. Light transmittance and haze value: 12 201200562 Each antireflection film was directly tested by Haze meter NDH2000 (manufactured by Nippon Denshoku Co., Ltd.). 3. Adhesion measurement: The adhesion of each antireflection film was measured in accordance with the standard test method of JIS K-6801. 4. Pencil Hardness Test The hardness of each anti-reflective film was tested with a hardness tester Scratch Hardness Tester Model 291 (Germany • ERICHSEN). The load used in the measurement was 500 g, and the pencil hardness was 3 Torr. 5. Measurement results Table 1

樣品編3虎 反射率 穿透率 1度值 附著性 硬度 (R),% (Τ),% (haze) (adhesion) (hardness) 實例2 1.51 94.57 0.31 100/100 3H 實例3 1.62 94.03 0.28 100/100 3H 實例4 1.75 93.15 0.21 100/100 3H 比較例 3.09 92.11 0.29 100/100 3H 由表1顯示的測定結果可知,實施例2及3為由含有依據本發 明的光活性乙烯基氟基矽氧化物之寡聚物及具有光活性之氟基之反 應單體二者的抗反射塗料組合物所製得的抗反射薄膜,具有較低的 13 201200562 反射率(R)及較高的穿透率(Τ),霧度值、附著性、及硬度等性質均 能符合要求。實施例4為由含有依據本發明的光活性乙烯基氟基矽 氧化物之寡聚物(不含具有光活性之氟基之反應單體)的抗反射塗料 組合物所製得的抗反射薄膜,反射率及穿透率的表現並不差,各性 質均能符合要求。比較例的組合物中不含依據本發明的光活性乙稀 基氟基矽氧化物之寡聚物,也不含具有光活性之氟基之反應單體, 由其所製得的抗反射薄膜,性質較差,即,反射率較高及穿透率較 低。 以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍 所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。 【圖式簡單說明】 第1圖列出適用於依據本發明的抗反射塗料組合物的光起始劑 的實例。 第2圖為製備依據本發明的光活性乙烯基氟基矽氧化物之寡聚 物的一實例的流程示意圖。 【主要元件符號說明】 無元件符號。Sample code 3 Tiger reflectivity penetration rate 1 degree value Adhesive hardness (R), % (Τ), % (haze) (adhesion) (hardness) Example 2 1.51 94.57 0.31 100/100 3H Example 3 1.62 94.03 0.28 100/ 100 3H Example 4 1.75 93.15 0.21 100/100 3H Comparative Example 3.09 92.11 0.29 100/100 3H From the measurement results shown in Table 1, it is understood that Examples 2 and 3 are composed of the photoactive vinyl fluoride-based ruthenium oxide according to the present invention. The antireflective coating prepared by the antireflective coating composition of the oligomer and the photoactive fluorine-based reactive monomer has a lower reflectance (R) of 13 201200562 and a higher transmittance ( Τ), the properties of haze value, adhesion, and hardness can meet the requirements. Embodiment 4 is an antireflection film prepared from an antireflective coating composition containing an oligomer of a photoactive vinyl fluoride ruthenium oxide according to the present invention (a reaction monomer having no photoactive fluorine group) The reflectivity and transmittance are not bad, and each property can meet the requirements. The composition of the comparative example does not contain the oligomer of the photoactive vinyl fluoroantimony oxide according to the present invention, and does not contain the reactive monomer having a photoactive fluorine group, and the antireflection film prepared therefrom , the nature is poor, that is, the reflectivity is higher and the penetration rate is lower. The above are only the preferred embodiments of the present invention, and all changes and modifications made to the scope of the present invention should fall within the scope of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 shows an example of a photoinitiator suitable for use in the antireflective coating composition according to the present invention. Fig. 2 is a schematic flow chart showing an example of the preparation of an oligomer of a photoactive vinyl fluoride-based ruthenium oxide according to the present invention. [Main component symbol description] No component symbol.

Claims (1)

201200562 七、申請專利範圍: 1. 一種光活性乙烯基氟基矽氧化物之寡聚物,包括下列化學式(I) 表示的化合物、化學式(II)表示的化合物、與化學式(III)表示的化合 物的一反應產物: RO x OR Si——〇 OR OR Si——OR OR OR (I) F3C—kCF2 OR OR (Π) R' H2C=c. 0 - - 〇 —C-〇- 一 -ch2- —Si Z «· y 〇 •Si——OR (ΙΠ) 其中各R係獨立選自曱基、乙基、及丙基所組成的組群,R,係選自 氫、曱基、及乙基所組成的組群,x為〇至17之整數,m為i至 10之整數’η為1至7之整數,2為〇或卜及至5之整數。 2.如請求項1所述之光活性乙烯基氟基矽氧化物之寡聚物,其中先 15 201200562 使化學式(I)表示的化合物與化學式(II)表示的化合物聚合再與化與 式(III)表示的化合物聚合,而形成該反應產物。 3. —種抗反射塗料組合物’包括如請求項1所述之光活性乙稀其氣 基矽氧化物之寡聚物、光起始劑、及稀釋溶劑。 進一步包括至少一具有光 4.如請求項3所述之抗反射塗料組合物, 活性之氟基之反應單體。 5.如請求項4所述之抗反射塗料組合物,其中該具有光活性之敦基 之反應單體包括具有可行光固化反應的含氟基烧類之乙稀基單體或 含氟基之壓克力系列單體。 八、圓式:201200562 VII. Patent application scope: 1. An oligomer of photoactive vinyl fluoride-based ruthenium oxide, comprising a compound represented by the following chemical formula (I), a compound represented by the chemical formula (II), and a compound represented by the chemical formula (III) A reaction product: RO x OR Si - 〇OR OR Si - OR OR OR (I) F3C-kCF2 OR OR (Π) R' H2C=c. 0 - - 〇-C-〇-一-ch2- —Si Z «· y 〇•Si——OR (ΙΠ) wherein each R is independently selected from the group consisting of a decyl group, an ethyl group, and a propyl group, and R is selected from the group consisting of hydrogen, fluorenyl, and ethyl. The group consisting of x is an integer from 〇 to 17, m is an integer from i to 10, 'η is an integer from 1 to 7, and 2 is an integer of 〇 or 卜 and up to 5. 2. The oligomer of the photoactive vinyl fluoride-based ruthenium oxide according to claim 1, wherein the compound represented by the formula (I) and the compound represented by the formula (II) are polymerized and reconciled with the formula 15 201200562 ( The compound represented by III) is polymerized to form the reaction product. 3. An anti-reflective coating composition' comprising an oligomer of a photoactive ethylene, a gas-based cerium oxide thereof as claimed in claim 1, a photoinitiator, and a diluent solvent. Further comprising at least one reactive monomer having light, such as the antireflective coating composition of claim 3, active fluorine groups. 5. The antireflective coating composition according to claim 4, wherein the photoactive dunk-based reactive monomer comprises a fluorine-based monomer having a viscotable photo-curable reaction or a fluorine-containing group. Cree series monomer. Eight, round: 1616
TW99121426A 2010-06-30 2010-06-30 Light-curable vinyl-fluoro-siloxane oligomer and antireflection coating composition containing the same TW201200562A (en)

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