201145317 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種薄划带阳甘 从你…人m 型電阻及其製造方法，特別是關 於一種利用金屬薄片製造夕鴒〗 衣k之薄型電阻及其製造方法。 【先前技術】201145317 VI. Description of the invention: [Technical field to which the invention pertains] The present invention relates to a thin-striped yang-gan from your...m-type resistor and a method of manufacturing the same, and more particularly to a thin type using a metal foil to make a shovel Resistance and its manufacturing method. [Prior Art]
隨著科技的進步，現右的箭工方 目;^。151 P 4在的電子產°°都以輕薄為設計的 目私。因此市％上已經出現一壤 .a ,ν ήΛ 帝、 禋溥型化電視，例如LED電 視。以-瓜LED電硯之規格而言 但其面板佔去約10公釐，M躺盾由劣 。馮20 A釐 λ又體厚度為2公餐，因此立餘内 部電路元件之厚度勢必要⑸、w 内 要减乂。如此一來，一種薄形化之 被動元件將為設計的趨勢。 程崎 ，在先刖技術中已經揭露一種薄型電阻，其利用轉印圖 形(Pnnt pattern)及應用f射雕刻之方式製成。但利用此方 式製w之薄型電阻必須在轉印後，逐—的修整或刻劃所需 的阻抗值及誤差值，因此在量產速度及製造成本上是一大 的問題。且湘f射細彳之方式可製造出的阻抗值選擇將 ®轉印^限制’導電層的厚度較本設計為薄，在 利用上會有許多限制。若要製成較薄之被動元件，也會有 脈衝強度不足的問題。 有鐾於此’因此有必要發明一種新的薄蜇電阻及薄型 電阻可大量之製造方法’以解決先前技術的缺失。 201145317 【發明内容】 本發明之主要目的係在提供一種薄型電阻，係利用精 密沖壓金屬薄片的技術製造。 本發明之另一主要目的係在提供一種薄型電阻之製造 方法。 為達成上述之目的，本發明之薄型電阻，包括金屬薄 片、陶瓷基體以及至少二金屬導線。金屬薄片包括複數之 導電通路。陶瓷基體具有凹槽，金屬薄片嵌合於凹槽。至 少二金屬導線係分別與金屬薄片焊接連接。金屬薄片係藉 由複數之導電通路以提供一電阻值。 本發明薄型電阻之製造方法，包括以下步驟：根據所 需之電阻值，利用沖壓製程而形成金屬薄片，金屬片包括 複數之導電通路；提供至少二金屬導線以分別連接金屬薄 片；提供一陶瓷基體，陶瓷基體包括一凹槽；以及嵌合該 金屬薄片於該陶瓷基體之凹槽。 【實施方式】 為讓本發明之上述和其他目的、特徵和優點能更明顯 易僅，下文特舉出本發明之具體實施例，並配合所附圖式， 作詳細說明如下。 請先同時參考圖1A到1C關於本發明之薄型電阻之相 關示意圖，其中圖1A-1B係本發明之金屬薄片嵌合於陶瓷 基體之實施方式之示意圖，圖1C係本發明之薄型電阻之外 觀示意圖。其中金屬薄片20係藉由圖1A-1B所示之方式 201145317 以鼓合於料絲3〇,最後再 阻10。 圖1C中所示之薄型電 本發明之薄型電阻1〇係用 用以提供__電阻值，佳者， I置（_未示）内， 1.9公羞至2.1公楚之間。當超薄 ^ 10之厚度係介於 視或顯示器）僅有2公分時，其内予裝置（例如超薄型電 也必須非常薄，因此本發明之薄二=需的零件，相對應地 求。 電阻1〇可提供此一需With the advancement of technology, the right arrow workers are now; ^. The electronic production of the 151 P 4 is designed to be light and thin. Therefore, there has been a soil in the city. A, ν ήΛ emperor, 禋溥 type TV, such as LED TV. In terms of the specifications of the - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Feng 20 A λ λ and the thickness of the body is 2 meals, so the thickness of the internal circuit components of the balance is necessary (5), w should be reduced. As a result, a thinner passive component will be the design trend. Cheng Qi, has introduced a thin type of resistor in the prior art, which is made by using a Pnnt pattern and applying a f-engraving method. However, the thin type resistor using this method must be trimmed or scored after the transfer, and the required impedance value and error value are a major problem in mass production speed and manufacturing cost. And the impedance value that can be produced by the method of squirting the fineness of the smear is to be thinner than the design, and there are many restrictions on the use. To make a thin passive component, there is also a problem of insufficient pulse strength. In view of this, it is necessary to invent a new thin tantalum resistor and a thin resistor which can be manufactured in a large amount to solve the drawback of the prior art. SUMMARY OF THE INVENTION The main object of the present invention is to provide a thin type resistor which is manufactured by a technique of precision stamping a metal foil. Another main object of the present invention is to provide a method of manufacturing a thin resistor. To achieve the above object, the thin type resistor of the present invention comprises a metal foil, a ceramic substrate and at least two metal wires. The metal foil includes a plurality of conductive paths. The ceramic substrate has a recess into which the foil is fitted. At least two metal wires are respectively soldered to the metal foil. The foil is provided by a plurality of conductive paths to provide a resistance value. The manufacturing method of the thin resistor of the present invention comprises the steps of: forming a metal foil by a stamping process according to a required resistance value, the metal sheet comprising a plurality of conductive paths; providing at least two metal wires to respectively connect the metal foil; providing a ceramic substrate The ceramic substrate includes a recess; and a recess for fitting the metal foil to the ceramic base. The above and other objects, features, and advantages of the present invention will become more apparent from the aspects of the invention. Please refer to FIGS. 1A to 1C for the related schematic diagram of the thin resistor of the present invention, wherein FIGS. 1A-1B are schematic views of an embodiment in which the metal foil of the present invention is embedded in a ceramic substrate, and FIG. 1C is an appearance of the thin resistor of the present invention. schematic diagram. The metal foil 20 is entangled in the wire 3〇 by the method shown in Figs. 1A-1B, and finally blocked 10 again. The thin type of electric resistor 1 shown in Fig. 1C is used to provide a __resistance value, preferably, I (not shown), and 1.9 shy to 2.1. When the thickness of the ultra-thin ^ 10 is only 2 cm between the view or the display, the internal device (for example, the ultra-thin type must also be very thin, so the thin part of the present invention = the required part, correspondingly Resistance 1〇 can provide this need
薄型電阻1G包括金屬薄片2g 線40。薄型電阻10主要藉由金屬薄=基體30及金屬導 特徵以提供刊電阻值。關於金屬 之材f及形狀等 後會有詳細描述，故在此先*贅述 之製造方式在之 兔之材質製成’並具有凹槽3卜金C係=一陶 型製成之喊基體3。可提供薄 易變形之㈣。 解決切技術巾薄餘動元件容 金屬導線40較佳者為一銅線或是一銅包鋼線(但本發 不限於此)所製成。金屬導線40係焊接於金屬薄片20 上’以使得薄型電阻1G可與電子裝置的其他零件（圖未顯 示）電性連接。金屬導線4〇與金屬薄片2〇的焊接方式可為 點焊之方式’但本發明並不以此為限。金屬導線40可為2 條或是4條’本發明並不以圖中所示之數量為限。 薄型電阻10還可包括石夕樹脂（Silicon Resin) 50。石夕 樹脂50係用以絕緣密封金屬薄片20及陶瓷基體30，用以 保護薄型電阻1〇之結構。金屬薄片20係與金屬導線40焊 201145317 接後，再嵌合於陶瓷基體30之凹槽31内。嵌合後之薄型 電阻1〇即如圖1B所示。最後再利用矽樹脂50將金屬薄片 2〇與陶究基體30密封，經過烘乾固化處理 電阻10之結構。 得1 著ΐ參考圖2及圖3關於本發明之金屬薄 圖2係本發明之金屬薄片之正面_，® 3 係本發明之金屬薄片之侧視圖。 :發明之金屬薄片20可用機器精密沖壓製造而成，並 =動=(Auto-tape)形式’以利與其他構件進行自動 :裝;片2〇之材質可為鋼，但本發明並不以此為 :由其他之金屬製成，以調整薄型電阻1〇所需之: h to 包括複數之導電通路21及壓痕22。金屬 溥片20可藉由其形狀’亦即導 彳 調整薄型電阻H)所需之阻值。在 ^數^及/或間距 導電通路21之間距d約為〇 2公太兩相鄰之 限。 么釐，但本發明並不以此為 在本發明之一實施例中，金屬導 式固定在Μ痕22,因此壓痕22之數線晳:用點焊之方 線40之數量。 實質係配合金屬導 另一方面’薄型電阻1G之阻抗值亦可 ”度t決定。在本實施例中，金/片20 公釐至0.1公釐之間。 月之厚度ί為0.025 詳言薄型電阻10之阻抗值可由以下公式求得：The thin resistor 1G includes a foil 2g line 40. The thin resistor 10 is mainly provided by the thin metal = the base 30 and the metal guide to provide a resistance value. The material f and the shape of the metal will be described in detail, so the manufacturing method of the first description is made in the material of the rabbit and has a groove 3b gold C system = a base made of a ceramic type 3 . Available in thin and easy to deform (4). The thin metal element 40 of the cutting technology towel is preferably made of a copper wire or a copper clad steel wire (but not limited to this). The metal wire 40 is soldered to the metal foil 20 so that the thin resistor 1G can be electrically connected to other parts of the electronic device (not shown). The manner in which the metal wire 4 turns and the metal foil 2 turns can be spot welded, but the invention is not limited thereto. The metal wires 40 may be two or four. The present invention is not limited to the number shown in the drawings. The thin resistor 10 may also include a Silicon Resin 50. Shi Xi Resin 50 is used to insulate the sealing metal foil 20 and the ceramic substrate 30 to protect the structure of the thin resistor 1〇. The metal foil 20 is soldered to the metal wire 40, and then joined to the recess 31 of the ceramic base 30. The thinned resistor 1 after the fitting is as shown in Fig. 1B. Finally, the metal foil 2 is sealed with the ceramic substrate 30 by using a resin 50, and the structure of the resistor 10 is dried and cured. Referring to Figures 2 and 3, the metal foil of the present invention is shown in Figure 2 as a side view of the metal foil of the present invention. The invention of the metal foil 20 can be manufactured by machine precision stamping, and = "Auto-tape" form 'to facilitate automatic loading with other components: the material of the sheet 2 can be steel, but the invention does not This is: it is made of other metals to adjust the thin resistor 1〇: h to includes a plurality of conductive paths 21 and indentations 22. The metal cymbal 20 can adjust the resistance required for the thin resistor H by its shape, i.e., the guide. The distance d between the ^ and / or the pitch conductive paths 21 is approximately 〇 2 rms and two adjacent limits. However, the present invention is not so limited. In one embodiment of the invention, the metal guide is fixed to the scar 22, so that the number of indentations 22 is clear: the number of squares 40 for spot welding. In essence, the impedance of the thin-type resistor 1G can be determined by the degree t. In this embodiment, the gold/sheet is between 20 mm and 0.1 mm. The thickness of the month is 0.025. The impedance value of the resistor 10 can be obtained by the following formula:
乂 P乂 P
RxW 201145317 其中t為金屬薄片20之厚度，L為金屬薄片20之導電 通路21所構成之長度，W為金屬薄片20之導電通路21 所構成之寬度，P為金屬薄片20之材質之阻抗係數，最後 R即為薄型電阻10之阻抗值。 由上述的說明可知，金屬薄片20可以利用其厚度t、 其導電通路21所構成之長度L與寬度W以及其材質（p ) 來得到所需的阻抗值。因此，在本發明中，金屬薄片20可 以利用不同的搭配方式，以得到0.025歐姆到47歐姆之電 • 阻值。 接著請參考圖4係本發明之薄型電阻之製造方法之步 驟流程圖。此處需注意的是，以下雖以上述之薄型電阻10 為例說明本發明之薄型電阻之製造方法，但本發明之薄型 電阻之製造方法並不以使用在上述之薄型電阻10為限。 首先進行步驟401 :根據所需之一電阻值，利用一沖壓 製程而形成一金屬薄片，該金屬片包括複數之導電通路。 首先根據所需電阻值選取金屬薄片20,並設計金屬薄 • 片20之形狀。金屬薄片係利用機器精密沖壓之製程製造， 並生產成為自動帶狀形式，如此一來即可以增加生產速度 及產量。在本實施例中，金屬薄片20之形狀即如圖2所示， 金屬薄片20係形成複數之導電通路21與至少二壓痕22。 並且金屬薄片20可根據所需電阻值以決定其形狀，亦即導 電通路21之數量與其所構成之長度L與寬度W。本發明 並不以此圖2所示之形狀為限。除了利用上述的形狀外， 亦可利用利用機器沖壓之製程製造出不同材質及厚度之金 屬薄片20，以決定所得到的電阻值。 201145317 接著進行步驟402:提供至少二金屬導線以分別連接該 金屬薄片。 接著提供至少二金屬導線40，以分別連接至金屬薄片 2 0。在本發明之一實施例中，金屬導線4 〇分別利用點焊之 方式以烊接於金屬薄片20之壓痕22。 再進行步驟403 .提供一陶瓷基體，該陶瓷基體包括一 凹槽，以嵌合該金屬薄片於該陶瓷基體之凹槽。 接著再提供陶瓷基體30,此陶瓷基體3〇包括凹槽31。 金屬薄片2G係嵌合於陶免基體3G之凹槽31内，即如圖 1 Α· 1B所示。 步驟404.提供-石夕樹脂，以絕緣密封該陶竟基體及該 金屬薄片，並執行烘乾流程。 ―將陶瓷基體30及金屬薄片2〇利用矽樹脂5〇密封，再 執仃烘乾流程將矽樹脂5〇烘乾固化以完成全部之製程。最 後會得到如圖1C所示之薄型電阻10。 最後進行步驟405 :測量該薄塑電阻之電阻值。 在上述步驟401到步驟4〇4完成後，即可得到薄型電 陣1〇。最後即可測量薄型電阻1G之電阻值 符合黧龙。 ％w 以上是’本發明之薄型電阻之製造方綱 lit 只要能達成本發明之目的，b 之步驟次序亦可加以改變。 藉由上述的步驟，即可製造出電阻 47歐姆之薄型電阻10,且薄型電p且丨“在以姆 溥生電阻10之厚度約為丨9 201145317 釐至2.1公釐之間，也可克服先前技術中強度不足的問題， 明顯優於先前技術之電阻。 綜上所陳，本發明無論就目的、手段及功效，在在均 顯示其迥異於習知技術之特徵，懇請貴審查委員明察， 早曰賜准專利，俾嘉惠社會，實感德便。惟應注意的是， 上述諸多實施例僅係為了便於說明而舉例而已，本發明所 主張之權利範圍自應以申請專利範圍所述為準，而非僅限 於上述實施例。 【圖式簡單說明】 圖1A-1B係本發明之金屬薄片嵌合於陶瓷基體之實施方式 之示意圖。 圖1C係本發明之薄型電阻之外觀示意圖。 圖2係本發明之金屬薄片之正面視圖。 圖3係本發明之金屬薄片之側視圖。 圖4係本發明之薄型電阻之製造方法之步驟流程圖。 【主要元件符號說明】 薄型電阻10 金屬薄片20 導電通路21 壓痕22 陶瓷基體30 201145317RxW 201145317 where t is the thickness of the foil 20, L is the length of the conductive path 21 of the foil 20, W is the width of the conductive path 21 of the foil 20, and P is the impedance coefficient of the material of the foil 20. Finally, R is the impedance value of the thin resistor 10. As apparent from the above description, the metal foil 20 can obtain a desired impedance value by using the thickness t, the length L and the width W of the conductive path 21, and the material (p) thereof. Therefore, in the present invention, the metal foil 20 can be used in different combinations to obtain a resistance value of 0.025 ohms to 47 ohms. Next, please refer to Fig. 4, which is a flow chart of the method for manufacturing the thin resistor of the present invention. Here, the method for manufacturing the thin resistor of the present invention will be described below by taking the above-described thin resistor 10 as an example. However, the method for manufacturing the thin resistor of the present invention is not limited to the above-described thin resistor 10. First, step 401 is performed: a metal foil is formed by a stamping process according to a desired resistance value, and the metal sheet includes a plurality of conductive paths. First, the metal foil 20 is selected in accordance with the required resistance value, and the shape of the thin metal sheet 20 is designed. The metal foil is manufactured by a machine precision stamping process and is produced in an automatic strip form, which increases production speed and throughput. In the present embodiment, the shape of the metal foil 20 is as shown in FIG. 2. The metal foil 20 forms a plurality of conductive paths 21 and at least two indentations 22. Further, the metal foil 20 can be shaped according to the required resistance value, that is, the number of the conductive paths 21 and the length L and the width W thereof. The present invention is not limited to the shape shown in Fig. 2. In addition to the above-described shape, the metal sheet 20 of different materials and thicknesses can be produced by a machine stamping process to determine the obtained resistance value. 201145317 Next, proceed to step 402: providing at least two metal wires to respectively connect the metal foil. At least two metal wires 40 are then provided to be connected to the metal foil 20, respectively. In one embodiment of the invention, the metal wires 4 are respectively spliced to the indentations 22 of the foil 20 by spot welding. Step 403 is further provided. A ceramic substrate is provided, the ceramic substrate comprising a recess for fitting the metal foil to the recess of the ceramic substrate. A ceramic substrate 30 is then provided, which comprises a recess 31. The metal foil 2G is fitted into the groove 31 of the ceramic substrate 3G, as shown in Fig. 1 1 1B. Step 404. Providing - Shi Xi resin to insulate and seal the ceramic substrate and the metal foil, and perform a drying process. ―The ceramic substrate 30 and the metal foil 2〇 are sealed with a bismuth resin 5 ,, and the enamel resin 5 〇 is dried and solidified to complete the entire process. Finally, a thin resistor 10 as shown in Fig. 1C is obtained. Finally, step 405 is performed: measuring the resistance value of the thin plastic resistor. After the above steps 401 to 4〇4 are completed, a thin array 1〇 can be obtained. Finally, the resistance value of the thin resistor 1G can be measured. %w or more is the manufacturing unit of the thin type resistor of the present invention. The order of steps of b may be changed as long as the object of the present invention can be attained. By the above steps, a thin resistor 10 having a resistance of 47 ohms can be manufactured, and the thin electric power p and 丨 "between the thickness of the ohmic resistor 10 is about 20119 201145317 PCT to 2.1 mm, which can also be overcome. The problem of insufficient strength in the prior art is obviously superior to the resistance of the prior art. In summary, the present invention shows its characteristics different from the prior art in terms of purpose, means and efficacy, and is requested to be examined by the reviewing committee. It is a matter of fact that the above-mentioned embodiments are only for convenience of explanation, and the scope of the claims claimed in the present invention is as described in the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1A-1B is a schematic view showing an embodiment in which a metal foil of the present invention is fitted to a ceramic substrate. Fig. 1C is a schematic view showing the appearance of the thin resistor of the present invention. 2 is a front view of a metal foil of the present invention. Fig. 3 is a side view of a metal foil of the present invention. Fig. 4 is a flow chart showing the steps of a method for manufacturing a thin resistor of the present invention. REFERENCE SIGNS 10 metal thin sheet resistance conductive paths 20 21 22 ceramic matrix indentation 30201145317
凹槽31 金屬導線40 矽樹脂50 間距d 厚度t 寬度W 長度LGroove 31 metal wire 40 resin 50 pitch d thickness t width W length L