201143984 六、發明說明： 【發明所屬之技術領域】 本發明係關於拋光塾，且係關於製造拋光塾及在拋光製 程中（例如’在化學機械平坦化製程中）使用拋光墊之方 法。 【先前技術】 在半導體器件及積體電路之製造期間，矽晶圓透過一系 列沈積及蝕刻步驟經反覆處理以形成上覆材料層及器件結 構。可使用稱為化學機械平坦化（CMP)之拋光技術來移除 在該等沈積及蝕刻步驟後剩餘之表面不規則物（例如凸 塊、不等高程之區、槽及溝），其目的係獲得無劃痕或坑 (稱為凹陷）之平滑晶圓表面，遍及晶圓的表面為高均勻 度。 在典型CMP拋光製程中，將諸如晶圓等基板在存在通常 係在水及/或蝕刻化學品中之磨料粒子之漿液的工作液體 之情形下，將之壓在拋光墊上且相對於其相對移動該基 板°與磨料漿液一起使用之各種CMP拋光墊已揭示於（例 如）美國專利第5,257,478號、第5,921，855號、第6，126,532 號、第6,899,598 82號及第7,267,610號中。固定磨料拋光 墊亦已知’如由美國專利第6,9〇8,366 B2號所例示，其中 通常將磨料粒子經常以自墊表面延伸之精確成型之磨料複 合物形式固定至該墊之表面。最近，PCT國際公開案第 WO 2006/057714號中闡述了具有自可壓縮底層延伸並藉由 導向板附加至底層之多個拋光元件的拋光墊。儘管已知多 153298.doc 201143984 種拋光墊並在使用，但業内仍繼續尋求新的經改良拋光墊 用於CMP，尤其是使用於較大晶粒直徑、或需要較高晶圓 表面扁平性及拋光均勻性位準之Cmp製程中。 【發明内容】 在一個態樣中，本發明闡述一種拋光墊，其包含具有第 一主側及與該第一主側相對之第二主側的薄片（shed卜及 自第一主側沿實質上垂直於該第一主側之第一方向向外延 伸的多個拋光元件，其中該等拋光元件之至少一部分與薄 片整體形成且橫向連接以便限制該等拋光元件相對於其他 拋光兀件中之-或多者橫向移動，但沿實質上垂直於抛光 元件之拋光表面之軸仍可移動’其中複數個拋光元件中之 至少-部分包括分散於連續聚合物相中之有機顆粒填料。 在另態、樣中，本發明閣述一種抛光塾，其包含具有第 主側及與该第-主側相對之第二主側的支樓層、及接合 至該支撐層之第一主側的多個拋光元件，丨中每一拋光元 件=有曝露拋光表面，纟中拋光元件自支樓層之第一主側 沿貫質上垂直於該第一主側之第一方向延伸另外其中複 數個抛光元件中之至少-部分包括分散於連續聚合物相中 ::機顆粒填料。在_些實例性實施例中，每—拋光元件 曰接合至支撐層、較佳使用直接熱接合附加至第一主 Γμ在—些實例性實施例中，拋光塾以二維陣列圖案配置 於第一主側上。 在額外實例性實施例 拋光元件，其中每一多 中’抛光元件中之至少—者係多孔 孔拋光元件包含多個孔。在某些實 153298.doc 201143984 彳生實施例中，實質上所有拋光元件均係、多孔拋光元件。 在一些特定實例性實施例中，該等孔實質上分佈於整個多 孔拋光元件上。 • 在某些目前較佳之實施例中，該等拋光元件中之至少一 • 纟係透明抛光it件。在-些實例性實施例中，支揮層、可 選導向板、可選拋光組合物分佈層、可選順應層 (compliant layer)、可選黏著層、至少一個拋光元件、或其 組合係透明的。在某些實例性實施例中，至少一個透明抛 光元件附加至薄片之透明部分。 在上述拋光墊中之其他實例性實施例中，拋光墊包含附 加至第二主側之可選順應層。在上述拋光墊之其他實例性 實施例中，抛光墊包含與第二主側相也附加至順應層的 可選壓敏黏著層。在額外實例性實施例t，拋光墊包含覆 蓋薄片或支撐層之第一主側的拋光組合物分佈層。 在上述拋光墊之其他實例性實施例中，拋光元件進一步 包括中值直徑小於1微米之磨料顆粒。在其他實例性實施 例中，拋光元件之至少一部分實質上不含磨料顆粒。在額 外實例性實施例中，上述拋光墊實質上不含磨料顆粒。 在再一態樣中’本發明闡述一種使用上述抛光塾之方 法，該方法包含使基板表面與拋光墊之拋光表面接觸、及 使拋光墊相對於基板相對移動以磨蝕該基板表面。在一些 貫例性實施例中’該方法進一步包含向該拋光墊表面與該 基板表面之間的界面提供拋光組合物。 在又一態樣中’本發明闡述一種製造上述拋光塾之方 153298.doc 201143984 法’該方法包含形成複數個拋光元件，該等拋光元件包括 分散於連續聚合物相中之有機顆粒填料，及將該等拋光元 件接合至具有與第一主側相對之第二主側之支撐層的第一 主側以形成抛光塾。 在額外態樣中’本發明闡述一種製造上述拋光塾之方 法’該方法包含將有機顆粒填料分散於包括聚合物前體材 料之可固化組合物中’將該可固化組合物分配於模具中， 在該模具中固化該可固化組合物以形成含有分散有機顆粒 填料之聚合物薄片，該聚合物薄片具有第一主側及與該第 一主側相對之第二主側、及自第一主側沿實質上垂直於該 第一主側之第一方向向外延伸的複數個抛光元件，其中該 等拋光元件與薄片整體形成且橫向連接以便限制該等拋光 元件相對於其他拋光元件中之一或多者橫向移動，但沿實 質上垂直於抛光元件之抛光表面之軸仍可移動。 在一些實例性實施例中，將有機顆粒填料分散於連續聚 合物相中包括熔融混合、揉壓、擠出或其組合。在某些實 例性實施例中’將流體模製組合物分配於模具中包括反應 注射模製、擠出模製、壓縮模製、真空模製或其組合中之 至少一者。在一些特定實例性實施例中，分配包括藉助膜 沖模將流體模製組合物連續擠至澆注輥上，另外其中該堯 注輥之表面包括模具。 在製造上述拋光墊之其他實例性實施例中，模具包括_ 維圖案，且第一主表面包括多個對應於該三維圖案之印記 的拋光元件，其中該複數個拋光元件自第一主側沿實質上 I53298.doc 201143984 垂直於該第一主側之第一方向向外延伸，另外其中該等拋 光兀件與薄片整體形成且橫向連接以便限制該等拋光元件 相對於其他拋光元件中之一或多者橫向移動，但沿實質上 垂直於拋光元件之拋光表面之軸仍可移動。 在製造上述拋光墊之一些實例性實施例中，該方法進一 步包含將順應層附加至第二主側。在其他實例性實施例 中，该方法進一步包含附加拋光組合物分佈層以覆蓋第一 主側之至少一部分。在某些實例性實施例中，該方法額外 包含在第一主側上與拋光元件一起形成圖案。在某些實例 性實施例中，形成圖案包括將拋光元件反應注射模製成圖 案、將拋光元件擠出模製成圖案、將拋光元件壓縮模製成 圖案、將拋光元件配置於對應於圖案之模板中、或將拋光 元件於支撐層上配置成圖案。在一些特定實例性實施例 中，將拋光元件接合至支撐層包括熱接合、超音波接合、 光化輻射接合、黏著劑接合及其組合。 在某些目前較佳之實例性實施例中，拋光元件之至少一 部分包括多孔拋光元件。在一些實例性實施例中，至少一 些拋光元件包括實質上無孔拋光元件。在一些特定實例性 實施例中，多孔拋光元件係藉由以下步驟形成：注射模製 氣體飽和聚合物'熔體、注射模製在反應時放出氣體以形成 聚合物之反應性混合物、注射模製包括溶解於超臨界氣體 中之聚合物之混合物、注射模製在溶劑中不相容之聚合物 之混合物、注射模製分散於熱塑性聚合物中之多孔熱固顆 粒、注射模製包括微球之混合物及其組合。在額外實例性 153298.doc 201143984 實施例中，藉由反應注射模製、氣體分散發泡及其組合形 成孔。 根據本發明之拋光墊之實例性實施例具有能夠使其用於 多種拋光應用中之各種特徵及特性。在一些目前較佳之實 施例中，本發明之拋光墊可尤其適於用於製造積體電路及 半導體器件中之晶圓之化學機械平坦化（CMP)。在某些實 例性實施例中，本揭示内容中所述之拋光墊可提供一些或 所有以下優點。 舉例而言’在一些實例性實施中，根據本發明之實例性 實施例之拋光墊可用於將在CMP製程中所使用之工作液體 更好地保持在該墊之拋光表面與正拋光之基板表面之間的 界面處’藉此改良該工作液體在增強拋光中之效率。在其 他實例性實施例中，根據本發明之拋光墊可減少或消除晶 圓表面在拋光期間之凹陷及/或邊緣腐蝕。 在其他實例性實施例中，使用具有根據本發明實例性實 把例之多孔元件的拋光墊可准許處理較大直徑晶圓同時維 持所需表面均勻度程度以獲得南晶片良率，在需要調節墊 表面以維持晶圓表面之拋光均勻度之前處理更多晶圓或減 少處理時間及墊調節器之磨損。在某些實施例中，具有多 孔拋光元件之CMP墊亦可提供具有諸如凹槽等表面紋理之 習用CMP墊之益處及優點，但可以較低成本更可再生產地 加以製造。在額外實施例中，將拋光元件接合至支撐層可 消除對使用導向板或黏著劑以將該等元件附加至該支樓層 的需要。 153298.doc 201143984 已概述本發明之實例性實施例之各種態樣及優點。以上 發明内容並不意欲闡述本發明之目前某些實例性實施例之 每一所圖解說明實施例或每一實施方案。以下圖式及實施 方式更特定地例示使用本文中所揭示原理之某些較佳實施 例。 【實施方式】 參照附圖進一步描述本發明之實例性實施例。 在用於晶圓拋光之典型CMP漿液製程中，將具有特性形 貌之晶圓放置成與拋光塾及含有磨料及拋光化學品之拋光 >分液接觸。方έ亥抛光塾係順應抛光塾，則可發生凹陷及腐 蝕現象’此乃因軟墊以與凸起區相同之速率拋光晶圓上之 低區。若該拋光墊係剛性拋光墊，則可極大地減少凹陷及 腐蝕；然而，儘管剛性拋光墊可有利地產生良好晶粒内平 坦化均勻度’但其亦可不利地產生不良晶圓内均勻度，此 乃因發生於晶圓周邊上之回彈效應。此回彈效應導致不良 邊緣良率及狹窄CMP拋光製程窗口。另外，可能難以藉助 剛性拋光墊開發穩定拋光製程，此乃因此等墊對不同的晶 圓形貌敏感，且完全依賴於墊調節器之使用以形成保存拋 光溶液且與晶圓介接之最佳拋光紋理。 因而，在一些實例性實施例中，本發明係針對改良之 CMP拋光墊，在各種實施例中，其組合順應性拋光墊及剛 性拋光墊二者之一些有利特性，同時消除或減少相應墊之 一些不利特性。 現將特別參照圖式來闡述本發明之各種實例性實施例。 153298.doc 201143984 可在不背離本揭示内容之精神及料之情形下對本發明之 實例性實施例採取各種修改及變更。因此，應理解，本發 明之該等貫施例並不限於以下所述之實例性實施例，但將 由申凊專利範圍及其任何等效内容中所闡明之限制加以控 制。 參照圖1，在一個實例性實施例中，本發明提供一種拋 光堅2,纟包括具㈣—主㈣及與該[主側％相對之 第二主側33的薄片13,、及自第—主側伽實質上垂直於該 第一主側32之第一方向 向外延伸的複數個拋光元件4，如 圖1中所不，其中該等拋光元件4之至少一部分與薄片13，整 體形成且橫向連接以便限制該等拋光元件4相對於其他抛 但沿實質上垂直於拋光 光元件4之中一或多者橫向移動 元件4之拋光表面14之軸仍可移動，其中複數個拋光元件# 中之至^ 一部分包括存於連續聚合物相之有機顆粒填料 15 〇 在由圖1圖解說明之特定實例性實施例中，薄片13，附加 至可選順應層16，其定位於與複數個拋光元件4相對之側 上（即在第一主側3 3上）。此外，顯示可選黏著層丨2處於順 應層16與薄片13’之間的界面處。可選黏著層12可用於將薄 片13之第一主側3 3附加至順應層16。另外，與複數個拋光 元件4相對地附加至順應層16的可選壓敏黏著層18可用於 暫時（例如，可移除地）將拋光墊2緊固至CMP拋光裝置（未 顯示於圖1中）之拋光台（未顯示於圖1中）。 在一些實例性實施例中，拋光墊2進一步包含可選拋光 153298.doc -10· 201143984 組合物分佈層8以覆蓋第一主側之至少一部分，如圖丨中所 示。在拋光製程期間，該可選拋光組合物分佈層8有助於 工作液體及/或拋光漿液分佈於個別拋光元件4中。提供複 數個延伸穿過該拋光組合物分佈層8的開孔6。每一抛光元 件4之一部分延伸至相應開孔6中。 在圖2中所示之替代實施例中’本發明提供—種拋光塾 2'，其包含具有第一主側34及與該第一主側34相對之第二 主側35的支撐層1〇、及接合至該支撐層1〇之第—主側“的 複數個拋光元件4,其中每一拋光元件4具有曝露拋光表面 且其中該等拋光元件4自支撐層1〇之第一主側34沿實 質上垂直於該第一主側34之第一方向延伸，另外其中複數 個拋光元件4中之至少一部分包括存於連續聚合物相之有 機顆粒填料15。 在拋光墊2’之一些實例性實施例中，每一拋光元件4藉 由直接熱接合至支撐層10、或藉由使用黏著劑（未顯示於 圖2中）將拋光元件4接合至支撐層1〇而附加至第一主側 34。在某些實例性實施例中，拋光墊進一步包含在第一主 側34上與支撐層1〇相對之可選導向板28，其中該導向板“ 包括延伸穿過該導向板28之複數個開孔6，且另外其中每 一拋光元件4之至少一部分延伸至相應開孔6中。在某些實 例性實施例中，每—拋光元件4之-部分穿過相應開孔6。 在一些特定實例性實施例中，每一拋光元件具有凸緣17， 且每一凸緣17周長大於相應開孔6之周長，如圖2中所示。 在由圖2圖解說明之特定實例性實施例中，支撐層⑺附 153298.doc -11 - 201143984 加至定位於支撐層1 0之第二主側35的可選順應層16，該支 推層1 〇與支撐層10之第一主側34相對地附加至複數個拋光 元件4。此外，顯示可選黏著層12處於順應層16與支撐層 10之間之界面處。可選黏著層12可用於將支撐層10之第二 主側3 5附加至順應層1 6。另外，與複數個拋光元件4相對 地附加至順應層16的可選壓敏黏著層1 8可用於暫時（例 如’可移除地）將拋光墊2,緊固至CMP拋光裝置（未顯示於 圖2中）之拋光台（未顯示於圖2中）。 可選導向板2 8亦示於圖2之實例性實施例中。為了產生 根據本發β月之拋光墊2' ’通常不需要可選導向板28，其亦 可用作對準模板用於將複數個拋光元件4配置於支撐層1〇 之第一主側上。在某些實例性實施例中，可選導向板28可 自拋光墊完全消除’如由圖1之拋光墊2所圖解說明。該等 實施例可有利地比包括多個拋光元件之其他已知拋光墊製 作起來更容易且較不昂貴。 圖2另外顯示可選拋光組合物分佈層8,，其亦可用作拋 光元件4之導向板。在拋光製程期間，可選拋光組合物分 佈層8’有助於將工作液體及/或拋光漿液分佈於個別拋光元 件4。當用作導向板時，拋光組合物分佈層8，可定位於支撐 層10之第一主側34上以促進複數個拋光元件4之配置，以 使得拋光組合物分佈層8’之第一主表面遠離支樓層1〇，且 與拋光組合物分佈層8’之該第一主表面相對的拋光組合物 分佈層S’之第二主表面靠近支撐層1〇，如圖2中所示。亦可 提供延伸穿過至少該可選導向板28(若存在）及/或可該選拋 153298.doc 12 201143984 光組合物分佈層8'(若存在）之複數個開孔6，如圖2中所 示。 如圖2所圖解說明，每一拋光元件4自可選導向板28之第 一主表面沿貫質上垂直於支撲層1〇之第一主側之第一方向 延伸。在圖2中所示之一些實施例中，每一拋光元件4具有 安裝凸緣17,且每一拋光元件4-4’藉由將相應凸緣17咬合 至支撐層10之第一主側34、及視情況可選拋光組合物分佈 層8或可選導向板28第二主表面而接合至支撑層1〇之第一 主側。因此，在拋光製程期間，拋光元件4隨意獨立地經 受在實質上垂直於支撐層1〇之第一主側34之方向上之位 移’同時仍藉助可選拋光組合物分佈層8,及/或可選導向板 28保持接合至支撐層1〇，且視情況另外附加至支撐層1〇。 在該等實施例中，較佳地，每一拋光元件4之至少一部 刀延伸至相應開孔6中’且更佳地’每一抛光元件4亦穿過 相應開孔6並自可選導向板28之第一主表面向外延伸。因 而’可選導向板28及/或可選拋光組合物分佈層8ι之複數個 開孔6亦可用作引導拋光元件4於支撐層1〇之第一主側34上 之橫向配置的模板。換言之，在拋光墊製作製程期間，可 選導向板28及/或可選拋光組合物分佈層8，可用作將複數個 拋光元件4配置於支撐層1〇之第一主側34上的模板或導 板。 在圖2圖解說明之特定實施例中，可選導向板28可包括 定位於支撐層10與拋光組合物分佈層8,之間之界面處的黏 合劑（未顯不）。因而，可選導向板28可用於將可選拋光組 153298.doc •13· 201143984 合物分佈層8,黏附至支撐層10，藉此將複數個拋光元件4緊 固附加至支撐層1 〇之第一主側34。然而，可使用其他接合 方法’包括使用（例如）熱及壓力將拋光元件4直接熱接合至 支撐層10 ^ 在圖2之拋光墊2,的相關實例性實施例中，複數個開孔 可配置為開孔陣列，其中開孔6之至少一部分包括由可選 抛光組合物分佈層8,形成之主膛孔及由可選導向板28形成 之底切區域’且該底切區域形成與相應拋光元件凸緣17咬 合之凸肩’藉此在拋光元件4與支撐層1〇之間不需要直接 接合之情形下將拋光元件4緊固附加至支撐層丨〇。另外， 在圖2中未圖解說明之一些實例性實施例中，多個拋光元 件4可配置成圖案，例如，呈配置於支樓層丨〇之主表面上 之元件二維陣列，或配置為模板或夾具用於在接合至支撐 層10之前配置拋光元件4。 在圖1至2所圖解說明之拋光墊2-2,之實施例的任一者 中，拋光元件4之至少一部分可為多孔拋光元件，且拋光 元件4’之一些部分可為實質上無孔拋光元件。然而，應瞭 解’在其他實例性實施例中’所有拋光元件4均可經選擇 以為多孔拋光元件，或所有拋光元件均可經選擇以為實質 上無孔拋光元件4’。在—些實例性實施例中，拋光元件中 之至少一者係多孔拋光元件，其中每一多孔拋光元件包含 複數個孔。在某些實例性實施例中，實質上所有拋光元件 均係多孔拋光元件。在一些特定實例性實施例中，該等孔 實質上分佈於整個多孔拋光元件上。 153298.doc 14 201143984 適宜多孔拋光元件揭示於PCT國際公開案第w〇 2009/158665號中。 在某些目前較佳之實施例中，複數個孔係藉由以下產 生·自拋光墊2-2'之拋光元件4之至少一部分至少部分移除 有機顆粒填料1 5之至少一部分，藉此留下對應於先前由有 機顆粒填料1 5所佔體積之空隙或孔體積。在一些實例性實 施例中’有機顆粒填料15可溶於拋光元件4之剩餘聚合物 相實質上不溶或僅部分可溶之溶劑中。 在一些實例性實施例中，有機顆粒填料丨5包括水溶性、 水可溶脹性或親水性聚合物，且水或水性溶劑用於溶解有 機顆粒填料1 5之至少一部分且藉此將其自一或多個拋光元 件4移除，藉此產生一或多個多孔拋光元件。在某些實例 性實施例中’水性溶劑經選擇為化學機械拋光製程中所用 之工作液體’且此工作液體用於溶解有機顆粒填料丨5之至 夕部分且藉此將其自一或多個拋光元件4移除，藉此產 生一或多個多孔抛光元件。 在圖1至2圖解說明之特定實施例中，顯示兩個多孔拋光 元件4連同一個貫質上無孔拋光元件然而，應瞭解，可 使用任一數目之拋光元件4，且可將任一數目之拋光元件4 選擇為多孔拋光元件4或實質上無孔拋光元件4，。 在些目刖較佳之實施例中，拋光元件4之至少一部分 係多孔抛光元件’在某些實施例中其至少具有多孔拋光表 面（圖1至2中之14)，該多孔拋光表面可與欲拋光之基板（未 顯不於圖1中）形成滑動或旋轉接觸。再次參照圖丨至2，拋 153298.doc •15· 201143984 光元件4之拋光表面14可為實質上扁平表面或可被紋理 化。在某些目前較佳之實施例中，使每一拋光元件4之至 少抛光表面多孔’例如具有微觀表面開口或孔15，該等微 觀表面開口或孔可採取出孔、通路、凹槽、通道及類似物 之形式。位於抛光表面處之此等孔15可用於促進於基板 (未顯示）與相應多孔拋光元件之間的界面處分佈並維持抛 光組合物（例如，未顯示於該等圖中之工作液體及/或磨料 抛光榮·液）。 在某些實例性實施例_，拋光表面14包括通常為圓柱形 毛細官之孔15。s亥專孔15可自抛光表面14延伸至抛光元件 4中。在相關實施例中，拋光表面包括通常為圓柱形毛細 管之孔15’其自拋光表面14延伸至多孔拋光元件4中。該 等孔無須係圓柱形，且其他孔幾何形狀可行，例如錐形、 矩形、金字塔形及類似形狀。一般而言，該等孔之特性尺 寸可指定為深度連同寬度（或直徑）及長度。該等特性孔尺 寸在深度上可介於自約25 μηι至約6,500 μηι之範圍内’在 寬度（或直徑）上介於自約5 μπι至約1〇〇〇 μιη之範圍内，且 在長度上介於自約1〇 μιη至約2〇〇〇 μιη之範圍内。 在一些實例性實施例中，多孔拋光元件可不具有多孔拋 光表面14，但在該等及其他實例性實施例中，孔15可實質 上分佈於整個多孔拋光元件4上。該等多孔拋光元件可用 作順應性抛光元件，其展示順應性拋光墊之一些有利特 性。在目前較佳之實施例中，拋光元件4可包括以多孔發 泡體形式實質上分佈於整個拋光元件4上之複數個孔。該 I53298.doc 201143984 發泡體可為閉孔發泡體或開孔發泡體。在一些實施例中， 閉孔發泡體可較佳》較佳地，呈發泡體形式之複數個孔15 展示單♦孔大小（例如，孔直徑）分佈。 在一些特定實例性實施例中，該複數個孔展示自至少約 1奈米（nm)、至少約1〇〇 nm、至少約5〇〇 nm、或至少約1 μιη之平均孔大小。在其他實例性實施例中，該複數個孔 展示至多約300 μηι、至多約1〇〇 μπι、至多約5〇 μπι、至多 約10 μιη、或至多約} μιη之平均孔大小。在某些目前較佳 之實施例中，該複數個孔展示自約1 nm至約3〇〇 μιη、約 〇·5 μηι至約1〇〇 μηι、約1 μηι至約1〇〇㈣、或約2㈣至約％ μιη之平均孔大小。 在上述包含實質上無孔拋光元件4,之拋光墊2-2,的額外 實例性實施例中，無孔拋光元件4，中之至少一者較佳係透 明拋光元件。在一些實例性實施例中，薄片π，或支撐層 1〇、可選導向板28 '可選拋光組合物分佈層8_8，、可選順 應層16、可選黏著層12、至少一個實質上無孔之拋光元件 4、或其組合係透明的。在圖丨中所圖解說明之某些實例性 實施例中，至少一個透明無孔拋光元件4,使用（例如）直接 熱接合或利用黏著劑（未顯示於圖1中）附加至薄片13·之第 一主側32的透明部分。 此外，應瞭解，拋光墊2_2，不需僅包括實質上相同之拋 光元件4。目而，|例而f，多孔抛光元件與無孔抛光元 件之任一組合或配置可構成複數個拋光元件4。亦應瞭 解’在某些實施例中’可有利地使用任_數量之多孔抛光 153298.doc 17 201143984 元件與實質上無孔拋光元件4,、及其任一組合或配置以形 成具有複數個拋光元件4之拋光墊。 在一些實例性實施例中，端視既定應用，拋光元件（在 圖1至2中之4-4)可以各種各樣的圖案分佈於薄片13，（圖” 或支樓層10(圖2)之第-主側上，且該等圖案可為規則或不 規則圖案。因而’在拋光墊2_2，之_些實例性實施例中， 可以預定規則圖案將複數個拋光元件4配置於（例如）支撐層 10之主表面，或配置為模板或夾具（未顯示於圖中）用於在 接合至支揮層10之前配置該等抛光元件。在使用模板或夾 具將複數個拋光元件4配置成圖案後，可（例如）藉由直接熱 接合至支撐層10、或藉由使用黏著劑或其他接合材料使支 撐層10之第一主側34與該複數個拋光元件4接觸並接合。 該等拋光元件可駐存於薄片13,或支撐層1〇之實質上整 個表面上’㈣片13’或支撐層1Q可存在不包含拋光元件之 區域。在一些實施例中，拋光元件具有至少3〇%、至少 40%或至少50%之支樓層平均表面覆蓋率。在其他實施例 中’該等拋光元件具有支樓層之主表面之總面積之至多約 80%、至多約70%或至多約6〇%之支撐層平均表面覆蓋 率’如由拋光元件之數目、每一拋光元件之橫截面面積及 抛光墊之橫截面面積所確定。 在由圖3A至3B所圖解說明之目前較佳拋光塾⑽實例性 實施例中，該等拋光元件4與薄片13,形成整體且以二维陣 列圖案配置於薄片U，之第一主側32上。應瞭解，可組合適 用於抛光塾2中之上述可選層（例士。，可選抛光組合物分佈 153298.doc -18- 201143984 層8、可選黏著層12、可選順應層16、可選壓敏黏著層 18、及至少一種實質上無孔/透明拋光元件4,)中之任一者 以形成圖3 A至3B中所示拋光墊。 圖3A圖解說明拋光元件4之一種特定形狀。應瞭解，可 以貫際上任一形狀形成拋光元件4，且可有利地使用具有 兩種或更多種不同形狀之複數個拋光元件4且視情況將其 配置成圖案以形成上述拋光墊2_2,。應進一步瞭解，可使 用相同形狀或不同形狀以產生多孔拋光元件或另一選擇為 實質上無孔拋光元件。 在一些實例性實施例中，拋光元件4之橫截面形狀（在大 體平行於拋光表面14之方向上穿過拋光元件4截取）可端視 既定應用廣泛地變化。儘管圖3A顯示具有大體圓形橫截面 之大體圓柱形拋光元件4，但在某些實施例中可能有且可 能需要其他橫戴面形狀。因而，在包含如前文所述拋光元 件4-4'之拋光墊2-2’的其他實例性實施例中，該等拋光元件 經選擇以具有在第一方向截取之選自圓形 '橢圓形、三角 形、正方形、矩形、及梯形及其組合的橫截面。 對於具有如圖3A至3B中所示圓形橫截面之大體圓柱形 拋光元件4 ’在一些實施例中，拋光元件4在大體平行於拋 光表面14之方向上之橫截面直徑係至少約5〇 μηι、更佳地 至少約1 mm、仍更佳地至少約5 mm β在某些實施例中， 拋光元件4沿大體平行於拋光表面14之方向之橫截面直徑 係至多約20 mm、更佳地至多約15 mm、仍更佳地至多約 12 mm。在一些實施例中，於拋光表面14處截取之拋光元 153298.doc 201143984 件可為自約50 μηι至約20 mm ’在某些實施例中，該直徑 係自約1 mm至約15 mm，且在其他實施财，該橫截面直 徑係自約5 mm至約12 mm。 在抛光整2-2.之額外實例性實施例中，拋光元件*之特徵 可在於高度、寬度及/或長度方面之特性尺寸。在某些實 例性實施例中，特性尺寸可選擇為至少約5〇 pm、更佳地 至少約】顏、仍更佳地至少約5賴。在某些實施例中， 拋光元件4在大體平行於拋光表面14方向上之橫截面直徑 係至多約20 mm、更佳地至多約15 mm、仍更佳地至多約 12 mm。在額外實例性實施例中’拋光元件之特徵在於以 下中之至少一者··高度為25〇㈣至2 5〇〇㈣寬度為】酿 至50 mm，長度為5瓜爪至“ mm，或直徑為！瓜饥至⑼ mm。在某些實例性實施例中，一或多種拋光元件4_4，可為 中空。 在其他實例性實施例中，每一拋光元件4在大體平行於 拋光表面14之方向上之橫截面面積可為至少約i，在 其他實施例中’為至少約1() mm2,且在又一些實施例中為 至少約或為20 mm2。在其他實例性實施例令，每一拋光元 件4在大體平行於拋光表面14之方向上之橫截面面積可為 至多約1，000 mm2’在其他實施例中，為至多約5〇〇賴2， 且在又一些其他實施例中為至多約25〇 mm2。 在一些實例性實施例中，拋光墊在大體平行於該拋光墊 之主表面之方向上的橫截面面積介於自約l〇〇 cm2至約 300,000 cm2之範圍内；在其他實施例中，介於自約1〇〇〇 153298.doc •20· 201143984 cm2至約！〇〇,〇〇〇 cm2之範圍内；且在再一些實施例中，介 於自約2,000 cm2至約5〇 〇〇〇 cm2之範圍内。 在一些實例性實施中，在拋光墊（圖丨中之2，圖2中之2,) 第-次用於拋光作業中之前，每一拋光元件（圖⑴中之心 4)化貫貝上垂直於支撐層（圖1至2中之1〇)之第一主側之第 一方向延伸。在某些實例性實施例中，該等拋光元件沿第 方向在包含可選拋光組合物分佈層（圖1中之8，圖2中之 8’）及/或可選導向板（圖2中之28)之平面上方延伸至少約〇 随、至少約（U麵、至少約〇 25咖、至少約〇 3 _或至 少約0.5 mm。在其他實例性實施例中，該等拋光元件沿第 方向在包含可選拋光組合物分佈層（圖丨中之8，圖2中之 8’）及/或可選導向板（圖2中之28)之平面上方延伸至多約⑺ _、至多約7.5 mm、至多約5 mm、至多約3 _、至多約 2 mm、或至多約1 mm。 在其他實例性實施例中（未顯示於圖中），可使該等拋光 元件之拋光表面與可選拋光組合物分佈層之曝露之主表面 齊平。在其他實例性實施例中’可使該等拋光元件之抛光 表面凹入到可選拋光組合物分佈層之曝露之主表面下面， 且隨後（例如）藉由移除可選拋光組合物分佈層之一部分來 使該等拋光元件之拋光表面與可選拋光組合物分佈層之曝 露之主表面齊平或使其延伸超過該主表面。此等實施例可 有利地與拋光組合物分佈層一起使用，該等抛光組合物分 佈層經選擇以在拋光製程期間或在與工件接觸之前、期間 或之後在施加至該拋光塾之可選調節製程中受到磨钱或腐 153298.doc -21- 201143984 钱。 在其他實例性實施例中，每一拋光元件4-4’均沿第一方 向在包含薄片13·(圖1)或支撐層10(圖2)之平面上方延伸至 少約0.25 mm、至少約0.3 mm、或至少約0.5 mm。在額外 實例性實施例中，拋光表面（圖1至2中之14)高於拋光元件 之基底或底部之高度（即’拋光元件之高度（H))可為0.25 mm、0.5 mm、1.0 mm、1.5 mm、2.0 mm、2.5 mm、3.0 mm、5.0 mm、1 0 mm或更多，此依賴於所使用之拋光組合 物及選擇用於拋光元件之材料。 再次參照圖1至2，在整個可選拋光組合物分佈層（圖1中 之8，圖2中之8，）及/或可選導向板28(圖2)上之開孔（圖 中之6)之深度及間隔可針對特定CMP製程視需要變化。在 些貫施例中’該專抛光件（圖1至2中之4 - 41)各自相對 於彼此及拋光組合物分佈層（圖1中之8，圖2中之28)以及導 向板31實質上維持在平面定向中，且在可選拋光組合物分 佈層（圖1中之8,圖2中之8·)及/或可選導向板28表面上方 伸出。 在一些實例性實施例中，因拋光元件4在任一可選導向 板（圖2中之28)及任一可選拋光組合物分佈層（圖丨中之8， 圖2中之8’）上方延伸所產生之空隙體積可為拋光組合物於 可選拋光組合物分佈層（圖1中之8，圖2中之8,)之表面上之 分佈提供空間。拋光元件4在拋光組合物分佈層（圖1中之 8，圖2中之8)上方突出一量，該突出量至少部分地取決於 拋光7L件之材料特性及拋光組合物（工作液體及或磨料漿 I53298.doc •22· 201143984 液）在拋光組合物分佈層（圖i中之8,圖2中之8,)之表面上 方之所需流動。 在另一替代實例性實施例（未圖解說明於圖中）中，本發 明提供包含有機顆粒填料及第二連續聚合物相之紋理化拋 光墊，其中該拋光墊具有第一主側及與該第一主側相對之 第二主側，且另外其中第一主側及第二主側中之至少一者 包括延伸至該側中之多個凹槽。在某些實例性實施例中， 凹槽之深度為約1微米（μιη)至約5,〇〇〇 μπι。在其他實例性 實施例中，拋光墊在實質上垂直於第一及第二側之方向上 具有圓形檢截面，其中該圓界定徑向方向，且另外其中複 數個凹槽為圓形’同心且在徑向方向上間隔開。 在其他實例性實施例（未圖解說明於圖中）中，紋理化拋 光墊之拋光表面包括呈複數個通道形式之孔，其中每一通 道較佳在大體平行於拋光表面之方向上延伸跨越拋光表面 之至少一部分《較佳地，每一通道係圓形通道，其沿大體 平行於拋光表面之方向在拋光表面之圓周周圍徑向延伸。 在其他貫施例中，複數個通道在拋光表面中形成一系列徑 向間隔之同心圓形凹槽。在其他實例性實施例（未予以圖 解說明）中，該等孔可採取二維通道陣列之形式，其中每 一通道僅延伸跨越拋光表面之一部分。 在其他實例性實施例（未圖解說明於圖中）中，該等通道 實際上可具有任一形狀，例如，圓柱形、三角形、矩形、 梯形、半球形及其組合。在一些實例性實施例中，每—通 道沿實質上垂直於拋光元件之拋光表面之方向的深度經選 153298.doc -23- 201143984 擇以介於至少約10 μηι、25 μΓη、5〇 μΐΏ、1〇〇叩至約 10,000 μηι、7,500 μπι、5,000 μηι、2,500 μιη、1，〇〇〇 叫範 圍中。在其他實例性實施例中，每一通道在大體平行於拋 光疋件之拋光表面之方向上之橫截面面積經選擇以介於自 約75平方微米（μ〆）至約3Χ106 μπ12之範圍中。 上述拋光墊之組成包含填充有無相互作用有機填料之連 續聚合物相。該連續聚合物相之特徵在於為熱塑性或熱固 性彈性體，而分散相之特徵在於為熱塑性或熱固性聚合 物。在上述拋光墊之一些實例性實施例中，拋光表面之至 ^ 刀包括熱塑性聚胺基甲酸酯、丙烯酸酯化聚胺基甲 =酯、環氧化聚胺基甲酸酯、環氧化橡膠、乙烯基樹脂、 環戊二騎脂、乙烯騎脂及其組合。在包含複數個抛光 元件4之拋光墊的一些實例性實施例中，至少一些拋光元 件包括呈連續聚合物相形式之熱塑性聚胺基甲酸酯、丙烯 酸醋化聚胺基甲酸醋、環氧化聚胺基甲酸醋、環氧化橡 膠、乙烯基樹脂、環戊二烯樹脂、乙㈣樹脂、聚丙稀酸 酉旨或其組合。 在某些實例性實施例中，右地 有機顆粒填料包括熱塑性聚名 物或熱固性聚合物中之至少 土 夕—者。在一些實例性實施你 中，有機顆粒填料包括聚稀煙、 %•狀聚稀烴、或聚稀烴筹 熱塑性彈性體中之至少一去 考°在一些特定實例性實施你 中’聚烯烴係選自聚乙烯、臀 眾丙烯、聚丁烯、聚異丁烯、 聚辛烯、其共聚物及其組合。 在其他貫例性實施例中，肩 機顆粒填料包括水溶性或水 J岭脹性聚合物’例如，聚乙 153298.doc •24· 201143984 烯醇、聚（環氧乙烷）、聚（乙烯醇）、聚（乙烯基吼咯啶酮）、 聚丙烯酸、聚（甲基）丙烯酸、其組合及諸如此類。 在其他實例性實施例中，有機顆粒填料佔每一拋光元件 之約5重量％至約9〇重量％。在額外實例性實施例中，有機 顆粒填料之特徵在於以下中之至少一者：長度為5微米至 5,000微米，寬度為5微米至25〇微米，等效球徑 spherical diameter)為5微米至1〇〇微来，或其組合。 拋光兀件亦可包括加強聚合物或其他複合材料，包含 (例如）：金屬顆粒、陶瓷顆粒、聚合物顆粒、纖維、其組 合及類似材料。在某些實施例中，可藉由於拋光元件中包 含諸如碳、石墨、金屬或其組合等填料來使其導電及/或 導熱。在其他實施例中，可在存在或不存在上述導電或導 熱填料之情形下使用導電聚合物，諸如（例如）以商品名 ORMECOM出售之聚苯胺（pANI)(可自〇rmec〇n以⑽“ (Ammersbek，Germany)購得）〇 在-些實例性貫施例+，為$生拋光元#，可將連續相 聚合物樹脂前體系統與微粉化有機顆粒粉末一起研磨以產 生含有分散有機顆粒相之反應性漿液。隨後可將經填充反 應性漿液直接澆注至模具中或進行b階段處理並在壓力下 模製’以產生包括整體模製拋光元件之圖案化表面。在至 少部分固化聚合物樹脂前體之後，可獲得具有拋光元件之 期望圖案的薄片，且隨後可將該薄片緊固至順應支撐層以 形成順應拋光墊。或者，可在膜纽或模製作業期間將順 應支撐層層壓至整體模製之拋光表面。亦可使用壓敏黏著 153298.doc •25· 201143984 劑於將順應材料之底部表面黏附至用於半導體拋光之抛光 板之表面。 在上述拋光墊之實例性實施例中之任一者中，拋光表面 係藉由相分離之聚合物掺合物形成，該聚合物摻合物包括 連續聚合物相及於室溫下不混溶於該連續聚合物相中之有 機顆粒填料。可藉由控制分散有機顆粒之粒度，例如藉由 控制研磨條件及/或持續時間來控制分散有機顆粒相:尺 寸。自該等類型之不混溶掺合物系統生成之聚合物膜在經 受斷裂或劃痕時特徵性地流出分散有機顆粒相。因此，若 塾表面係自此類型之聚合物捧合物生成，則表面之特徵可 為具有因分散有機顆粒相之流出或釋放而產生的孔隙率。 在其他實例性實施例中，複數個孔係在至少一些拋光元 件中藉由以下產生：自拋光墊2_2，之拋光元件4之至少一部 分至少部分移除有機顆粒填料15之至少一部分，藉此留； 對應於先前由有機顆粒填料15所佔體積之㈣:或孔體積。 在一些實例性實施例中，有機顆粒填料可溶於第一連續聚 合物相13貫質上不溶或僅部分可溶之溶劑中。 在一些實例性實施例中，有機顆粒填料包括水溶性、水 可溶脹性或親水性熱塑性聚合物，且水或水性溶劑用於溶 解有機顆粒填料15之至少一部分且藉此將其自一或多個拋 光元件4移除，藉此產生一或多個多孔抛光元彳。適宜水 溶性聚合物包含聚（環氧乙院）、聚（乙稀醇）、聚（乙稀基处 咯啶酮）、聚丙烯酸、聚（甲基）丙烯酸、其與其他單體之共 聚物、及其組合。 153298.doc • 26 - 201143984 在某些實難實施财，水性㈣經選擇為化學機械抛 光製程中所用之工作液體’且此卫作液體用於溶解有機顆 粒填料15之至少-部分且藉此將其自一或多個拋光元件4 移除’藉此產生一或多個多孔拋光元件。 在上述拋光墊之其他實例性實施例巾，有機顆粒填料佔 每一拋光元件之約1重量％、2.5重量％、5重量％或1〇重量 %至約50重量。/。、60重量％、70重量％、8〇重量％或9〇重量 % °在某些實例性實施例中，有機顆粒填料之特徵在於以 下中之至少-者··長度為5μηι至5,〇〇〇μηι，寬度為—至 25—等效球徑為5叫至⑽㈣，或其組合。較佳地， 有機顆粒填料具有實質上均 5 μηι > 10 μηι > 20 μπι ' 30 200 μηι、150 μηι、100 pm μηι之中值直徑。 勻之球形，且展示至少丨μιη、 μηι、40 pm、5〇 μηι、且至多 、90 μηι、80 μιη、70 μιη或 60 在上述拋光塾中之任一者之其他實例性實施例中，薄片 13’、支撑層1G或紋理化拋光塾可實f上不可壓縮，諸如剛 性薄膜或其他硬基板，但較佳地可壓縮以提供朝向抛光表 面引導之正壓力。在-些實例性實施例中，薄片或支樓層 可包括撓性順應材料，諸如順應««合物。在其他實 例性實施例中，薄片、支撐層或塾較㈣由可壓縮聚合物 材料(經·發泡聚合物材料較佳)製成。在某些實施例中，閉 孔發泡體可較佳’但在其他實施例中’可使用開孔發泡 體。在額外實例性實施财，該等拋光元件可作為附加至 該支禮層之整體拋光元件薄片與該支標層一起形成，該支 153298.doc •27- 201143984 撐層可為可壓縮或順應支撐層。 薄片或支撑層較佳液體不可滲透，以防止工作液體穿透. 或滲透至該支撐層中或從其穿透或滲透。然而，在一些實 施例中’薄片或支撐層可包括單獨或與可選障壁結合之液 體可滲透材料，該障壁用以防止或抑制液體自該支撐層穿 透或滲透。此外’在其他實施例中，可有利地使用多孔薄 片或支撐層’（例如）以在拋光期間將工作液體（例如拋光漿 液）保持在該拋光墊與工件之間的界面處。 在某些實例性實施例中’薄片或支撐層可包括選自聚矽 氧、天然橡膠、苯乙烯-丁二烯橡膠、氣丁橡膠、聚胺基 曱酸酯、聚酯、聚乙烯及其組合之聚合物材料。薄片或支 撐層可進一步包括各種各樣的額外材料，諸如填料、顆 粒、纖維、增強劑及類似材料。 已發現聚胺基甲酸酯係尤其有用之薄片或支撐層材料， 其中熱塑性聚胺基曱酸酿（TPU)尤佳。在一些目前較佳之 實施例中’該支撐層係包括例如以下之一種或多種TPU的201143984 VI. INSTRUCTIONS OF THE INVENTION: FIELD OF THE INVENTION The present invention relates to polishing crucibles and to methods for making polishing crucibles and using polishing mats in a polishing process (e.g., in a chemical mechanical planarization process). [Prior Art] During the fabrication of a semiconductor device and an integrated circuit, the germanium wafer is subjected to a series of deposition and etching steps to form an overlying material layer and a device structure. Polishing techniques known as chemical mechanical planarization (CMP) may be used to remove surface irregularities (eg, bumps, unequal elevation regions, trenches, and trenches) remaining after such deposition and etching steps, A smooth wafer surface with no scratches or pits (called depressions) is obtained, with high uniformity across the surface of the wafer. In a typical CMP polishing process, a substrate, such as a wafer, is pressed against a polishing pad and moved relative to one another in the presence of a working liquid in the presence of a slurry of abrasive particles typically in water and/or etch chemistry. Various CMP polishing pads for use with the abrasive slurry are disclosed in, for example, U.S. Patent Nos. 5,257,478, 5,921,855, 6,126,532, 6,899,598,82, and 7,267,610. Fixed abrasive polishing pads are also known, as exemplified by U.S. Patent No. 6,9,8,366 B2, in which abrasive particles are often fixed to the surface of the pad in the form of a precisely shaped abrasive composite extending from the surface of the pad. Recently, PCT International Publication No. WO 2006/057714 describes a polishing pad having a plurality of polishing elements extending from a compressible underlayer and attached to the underlayer by a guide plate. Although more than 153298 is known. Doc 201143984 polishing pads are in use, but the industry continues to seek new modified polishing pads for CMP, especially for larger die sizes, or for higher wafer surface flatness and polishing uniformity levels. In the Cmp process. SUMMARY OF THE INVENTION In one aspect, the present invention provides a polishing pad comprising a sheet having a first major side and a second major side opposite the first major side (shed and from the first major side a plurality of polishing elements extending outwardly in a first direction perpendicular to the first major side, wherein at least a portion of the polishing elements are integrally formed with the sheet and laterally coupled to limit the polishing elements relative to the other polishing elements - or more laterally moving, but still movable along an axis substantially perpendicular to the polishing surface of the polishing element' wherein at least a portion of the plurality of polishing elements comprises an organic particulate filler dispersed in the continuous polymer phase. In the same manner, the present invention provides a polishing crucible comprising a support floor having a first main side and a second main side opposite to the first main side, and a plurality of polishings joined to the first main side of the support layer. Each of the polishing elements of the crucible has an exposed polishing surface, and the polishing element extends from the first main side of the support floor to the first direction perpendicular to the first main side, and the plurality of polishing elements At least a portion of the material comprises dispersed in a continuous polymer phase: an organic particulate filler. In some exemplary embodiments, each polishing element is bonded to a support layer, preferably using direct thermal bonding to the first primary In some exemplary embodiments, the polishing crucibles are disposed on the first major side in a two-dimensional array pattern. In additional exemplary embodiments polishing elements, wherein at least one of each of the 'polishing elements' is a porous aperture The polishing element contains a plurality of holes. In some cases 153298. Doc 201143984 In the twin embodiment, substantially all of the polishing elements are porous, porous polishing elements. In some specific exemplary embodiments, the holes are substantially distributed throughout the porous polishing element. • In some presently preferred embodiments, at least one of the polishing elements is transparently polished. In some exemplary embodiments, the support layer, the optional guide plate, the optional polishing composition distribution layer, the optional compliant layer, the optional adhesive layer, the at least one polishing element, or a combination thereof are transparent of. In certain exemplary embodiments, at least one transparent polishing element is attached to the transparent portion of the sheet. In other exemplary embodiments of the polishing pad described above, the polishing pad includes an optional compliant layer that is attached to the second major side. In other exemplary embodiments of the polishing pad described above, the polishing pad includes an optional pressure sensitive adhesive layer that is also attached to the compliant layer with the second major side. In additional exemplary embodiment t, the polishing pad comprises a polishing composition distribution layer covering the first major side of the sheet or support layer. In other exemplary embodiments of the polishing pad described above, the polishing element further comprises abrasive particles having a median diameter of less than 1 micron. In other exemplary embodiments, at least a portion of the polishing element is substantially free of abrasive particles. In an additional exemplary embodiment, the polishing pad described above is substantially free of abrasive particles. In still another aspect, the invention sets forth a method of using the above-described polishing crucible comprising contacting a surface of a substrate with a polishing surface of a polishing pad and relatively moving the polishing pad relative to the substrate to abrade the surface of the substrate. In some embodiments, the method further comprises providing a polishing composition to an interface between the polishing pad surface and the substrate surface. In still another aspect, the invention sets forth a method for producing the above-mentioned polished crucible 153298. Doc 201143984 method of forming a plurality of polishing elements comprising organic particulate filler dispersed in a continuous polymer phase, and joining the polishing elements to a second major side opposite the first major side The first major side of the support layer forms a polished crucible. In an additional aspect, 'the present invention describes a method of making the above-described polishing crucible' which comprises dispersing an organic particulate filler in a curable composition comprising a polymeric precursor material 'dispensing the curable composition into a mold, Curing the curable composition in the mold to form a polymer sheet comprising a dispersed organic particulate filler, the polymer sheet having a first major side and a second major side opposite the first major side, and from the first master a plurality of polishing elements having a lateral direction extending substantially perpendicular to a first direction of the first major side, wherein the polishing elements are integrally formed with the sheet and laterally coupled to limit one of the polishing elements relative to the other polishing elements Or more laterally moving, but still movable along an axis substantially perpendicular to the polishing surface of the polishing element. In some exemplary embodiments, dispersing the organic particulate filler in the continuous polymer phase comprises melt mixing, rolling, extrusion, or a combination thereof. In some exemplary embodiments, dispensing the fluid molding composition into the mold comprises at least one of reactive injection molding, extrusion molding, compression molding, vacuum molding, or a combination thereof. In some specific exemplary embodiments, dispensing includes continuously extruding the fluid molding composition onto the casting roll by means of a film die, wherein in addition the surface of the enamel roll comprises a mold. In other exemplary embodiments of making the polishing pad described above, the mold includes a pattern, and the first major surface includes a plurality of polishing elements corresponding to the imprint of the three-dimensional pattern, wherein the plurality of polishing elements are from the first major side In essence I53298. Doc 201143984 extends outwardly in a first direction perpendicular to the first major side, further wherein the polishing elements are integrally formed with the sheet and laterally coupled to limit lateral movement of the polishing elements relative to one or more of the other polishing elements However, it is still movable along an axis substantially perpendicular to the polishing surface of the polishing element. In some exemplary embodiments of making the polishing pad described above, the method further includes attaching the compliant layer to the second major side. In other exemplary embodiments, the method further includes additional polishing composition distribution layers to cover at least a portion of the first major side. In certain exemplary embodiments, the method additionally includes forming a pattern with the polishing element on the first major side. In certain exemplary embodiments, forming the pattern includes injection molding the polishing element into a pattern, extrusion molding the polishing element into a pattern, compression molding the polishing element into a pattern, and arranging the polishing element in a pattern corresponding to the pattern The pattern is placed in the template or on the support layer. In some specific exemplary embodiments, bonding the polishing element to the support layer includes thermal bonding, ultrasonic bonding, actinic radiation bonding, adhesive bonding, and combinations thereof. In some presently preferred exemplary embodiments, at least a portion of the polishing element comprises a porous polishing element. In some exemplary embodiments, at least some of the polishing elements comprise substantially non-porous polishing elements. In some specific exemplary embodiments, the porous polishing element is formed by injection molding a gas saturated polymer 'melt, injection molding a gas to evolve a gas to form a reactive mixture of the polymer, injection molding. The invention comprises a mixture of polymers dissolved in a supercritical gas, a mixture of injection-molded polymers incompatible in a solvent, injection molded porous thermosetting particles dispersed in a thermoplastic polymer, and injection molding including microspheres. Mixtures and combinations thereof. In the extra case of 153298. Doc 201143984 In the examples, pores were formed by reaction injection molding, gas dispersion foaming, and combinations thereof. An exemplary embodiment of a polishing pad in accordance with the present invention has various features and characteristics that enable it to be used in a variety of polishing applications. In some presently preferred embodiments, the polishing pad of the present invention is particularly suitable for use in the fabrication of integrated circuits and chemical mechanical planarization (CMP) of wafers in semiconductor devices. In certain exemplary embodiments, the polishing pads described in this disclosure may provide some or all of the following advantages. For example, in some example implementations, a polishing pad in accordance with an exemplary embodiment of the present invention can be used to better maintain the working fluid used in the CMP process on the polishing surface of the pad and the substrate surface being polished. At the interface between the 'by this, the efficiency of the working liquid in enhancing polishing is improved. In other exemplary embodiments, the polishing pad in accordance with the present invention can reduce or eliminate dishing and/or edge corrosion of the crystal surface during polishing. In other exemplary embodiments, the use of a polishing pad having a porous member according to an exemplary embodiment of the present invention may permit processing of larger diameter wafers while maintaining the desired degree of surface uniformity to achieve south wafer yield, requiring adjustment The pad surface is processed to maintain more wafers or to reduce processing time and pad conditioner wear to maintain polishing uniformity of the wafer surface. In some embodiments, a CMP pad having a multi-hole polishing element can also provide the benefits and advantages of a conventional CMP pad having a surface texture such as a groove, but can be manufactured at a lower cost and more reproducible. In an additional embodiment, joining the polishing elements to the support layer eliminates the need to use guide plates or adhesives to attach the elements to the floor. 153298. Doc 201143984 has outlined various aspects and advantages of the exemplary embodiments of the present invention. The above summary is not intended to describe each illustrated embodiment or every embodiment of the present invention. The following figures and embodiments more particularly exemplify certain preferred embodiments using the principles disclosed herein. [Embodiment] An exemplary embodiment of the present invention will be further described with reference to the accompanying drawings. In a typical CMP slurry process for wafer polishing, a wafer having a characteristic morphology is placed in contact with a polishing crucible and a polishing > dispensing containing abrasive and polishing chemicals. Fang Haohai's polished enamel can be embossed and etched by the polishing ’. This is because the pad polishes the low area on the wafer at the same rate as the raised area. If the polishing pad is a rigid polishing pad, the dishing and corrosion can be greatly reduced; however, although the rigid polishing pad can advantageously produce good in-die planarization uniformity, it can disadvantageously produce poor in-wafer uniformity. This is due to the rebound effect that occurs on the periphery of the wafer. This rebound effect results in poor edge yield and a narrow CMP polishing process window. In addition, it may be difficult to develop a stable polishing process with a rigid polishing pad, which is why the pad is sensitive to different crystal domes and is completely dependent on the use of the pad conditioner to form the best solution for holding the polishing solution and interfacing with the wafer. Polished texture. Thus, in some exemplary embodiments, the present invention is directed to an improved CMP polishing pad that, in various embodiments, combines some of the advantageous properties of both a compliant polishing pad and a rigid polishing pad while eliminating or reducing the corresponding pad. Some unfavorable features. Various exemplary embodiments of the present invention will now be described with particular reference to the drawings. 153298. Doc 201143984 Various modifications and changes may be made to the exemplary embodiments of the present invention without departing from the spirit and scope of the disclosure. Therefore, it should be understood that the embodiments of the present invention are not limited to the example embodiments described below, but are limited by the scope of the claims and the equivalents thereof. Referring to Fig. 1, in an exemplary embodiment, the present invention provides a polishing cartridge 2 comprising a sheet having a (four)-main (four) and a second major side 33 opposite the main side %, and from the first The primary side gamma is substantially perpendicular to a plurality of polishing elements 4 extending outwardly in a first direction of the first major side 32, as shown in FIG. 1, wherein at least a portion of the polishing elements 4 are integrally formed with the sheet 13 and Transversely connecting to limit the movement of the polishing elements 4 relative to other axes of the polishing surface 14 that laterally moves the element 4 substantially perpendicular to one or more of the polishing elements 4, wherein the plurality of polishing elements # To a portion comprising an organic particulate filler 15 in a continuous polymer phase. In the particular exemplary embodiment illustrated by Figure 1, a sheet 13 is attached to an optional compliant layer 16 that is positioned with a plurality of polishing elements. 4 on the opposite side (ie on the first main side 3 3). Furthermore, the optional adhesive layer 丨 2 is shown at the interface between the compliant layer 16 and the sheet 13'. An optional adhesive layer 12 can be used to attach the first major side 3 3 of the sheet 13 to the compliant layer 16. Additionally, an optional pressure sensitive adhesive layer 18 attached to the compliant layer 16 opposite the plurality of polishing elements 4 can be used to temporarily (e.g., removably) secure the polishing pad 2 to the CMP polishing apparatus (not shown in Figure 1). Medium) polishing table (not shown in Figure 1). In some exemplary embodiments, polishing pad 2 further includes optional polishing 153298. Doc -10· 201143984 The composition distribution layer 8 covers at least a portion of the first major side, as shown in FIG. The optional polishing composition distribution layer 8 facilitates distribution of the working liquid and/or polishing slurry in the individual polishing elements 4 during the polishing process. A plurality of openings 6 extending through the distribution layer 8 of the polishing composition are provided. A portion of each of the polishing elements 4 extends into the corresponding opening 6. In an alternative embodiment shown in FIG. 2, the invention provides a polishing cartridge 2 comprising a support layer 1 having a first major side 34 and a second major side 35 opposite the first major side 34. And a plurality of polishing elements 4 bonded to the first to the main side of the support layer 1 , wherein each polishing element 4 has an exposed polishing surface and wherein the polishing elements 4 are self-supporting layer 1 from the first major side 34 Extending in a first direction substantially perpendicular to the first major side 34, further wherein at least a portion of the plurality of polishing elements 4 comprises an organic particulate filler 15 present in a continuous polymer phase. Some examples of polishing pads 2' In an embodiment, each polishing element 4 is attached to the first primary side by direct thermal bonding to the support layer 10, or by bonding the polishing element 4 to the support layer 1 using an adhesive (not shown in Figure 2). 34. In certain exemplary embodiments, the polishing pad further includes an optional guide plate 28 on the first major side 34 opposite the support layer 1 ,, wherein the guide plate "includes a plurality of extensions extending through the guide plate 28 Openings 6, and additionally at least one of each of the polishing elements 4 A portion extends into the corresponding opening 6. In some exemplary embodiments, each of the portions of the polishing element 4 pass through the respective opening 6. In some particular exemplary embodiments, each polishing element has a flange 17, and each flange 17 has a circumference that is greater than the circumference of the corresponding opening 6, as shown in FIG. In the particular exemplary embodiment illustrated by Figure 2, the support layer (7) is attached to 153298. Doc -11 - 201143984 is added to an optional compliant layer 16 positioned on the second major side 35 of the support layer 10, the support layer 1 附加 being attached to the plurality of polishing elements opposite the first major side 34 of the support layer 10 4. In addition, the optional adhesive layer 12 is shown at the interface between the compliant layer 16 and the support layer 10. An optional adhesive layer 12 can be used to attach the second major side 3 5 of the support layer 10 to the compliant layer 16. Additionally, an optional pressure sensitive adhesive layer 18 attached to the compliant layer 16 opposite the plurality of polishing elements 4 can be used to temporarily (e.g., 'removably) secure the polishing pad 2 to a CMP polishing apparatus (not shown) The polishing table of Figure 2) is not shown in Figure 2. An optional guide plate 28 is also shown in the exemplary embodiment of FIG. In order to produce a polishing pad 2'' according to the present invention, an optional guide plate 28 is generally not required, which can also be used as an alignment template for arranging a plurality of polishing elements 4 on the first major side of the support layer 1''. In certain exemplary embodiments, the optional guide plate 28 can be completely eliminated from the polishing pad as illustrated by the polishing pad 2 of FIG. These embodiments may advantageously be easier and less expensive to manufacture than other known polishing pads comprising a plurality of polishing elements. Figure 2 additionally shows an optional polishing composition distribution layer 8, which can also be used as a guide for the polishing element 4. The optional polishing composition distribution layer 8' facilitates distribution of the working liquid and/or polishing slurry to the individual polishing elements 4 during the polishing process. When used as a guide sheet, a polishing composition distribution layer 8 can be positioned on the first major side 34 of the support layer 10 to facilitate configuration of the plurality of polishing elements 4 such that the first of the polishing composition distribution layers 8' The surface is remote from the support floor and the second major surface of the polishing composition distribution layer S' opposite the first major surface of the polishing composition distribution layer 8' is adjacent to the support layer 1'', as shown in FIG. It may also be provided to extend through at least the optional guide plate 28 (if present) and/or may be selected to be thrown 153298. Doc 12 201143984 A plurality of openings 6 of the light composition distribution layer 8' (if present), as shown in FIG. As illustrated in Figure 2, each polishing element 4 extends from a first major surface of the optional guide plate 28 in a first direction perpendicular to the first major side of the blister layer 1 贯. In some embodiments shown in FIG. 2, each polishing element 4 has a mounting flange 17, and each polishing element 4-4' is snapped to the first major side 34 of the support layer 10 by snapping the respective flange 17 And optionally, the polishing composition distribution layer 8 or the optional second side surface of the guide plate 28 is joined to the first major side of the support layer 1〇. Thus, during the polishing process, the polishing element 4 is arbitrarily independently subjected to displacement in a direction substantially perpendicular to the first major side 34 of the support layer 1' while still being distributed by the optional polishing composition layer 8, and/or The optional guide plate 28 remains bonded to the support layer 1 〇 and is additionally attached to the support layer 1 视 as appropriate. In these embodiments, preferably, at least one of the blades of each polishing element 4 extends into the corresponding opening 6 and, more preferably, each polishing element 4 also passes through the corresponding opening 6 and is optional. The first major surface of the guide plate 28 extends outwardly. Thus, the plurality of openings 6 of the optional guide plate 28 and/or the optional polishing composition distribution layer 8i can also be used as a template for guiding the lateral arrangement of the polishing element 4 on the first major side 34 of the support layer 1〇. In other words, during the polishing pad fabrication process, the optional guide plate 28 and/or the optional polishing composition distribution layer 8 can be used as a template for arranging a plurality of polishing elements 4 on the first major side 34 of the support layer 1〇. Or a guide. In the particular embodiment illustrated in Figure 2, the optional guide plate 28 can include an adhesive (not shown) positioned at the interface between the support layer 10 and the polishing composition distribution layer 8. Thus, the optional guide plate 28 can be used to select the optional polishing set 153298. Doc • 13· 201143984 The composition distribution layer 8, adhered to the support layer 10, whereby a plurality of polishing elements 4 are tightly attached to the first major side 34 of the support layer 1 . However, other bonding methods may be used 'including direct thermal bonding of the polishing element 4 to the support layer 10 using, for example, heat and pressure. ^ In the related exemplary embodiment of the polishing pad 2 of FIG. 2, a plurality of apertures are configurable An array of apertures, wherein at least a portion of the apertures 6 includes a primary polishing aperture formed by the optional polishing composition distribution layer 8, and an undercut region formed by the optional guide plate 28 and the undercut region is formed and polished accordingly The shoulder of the element flange 17 is engaged 'by thereby fastening the polishing element 4 to the support layer 不需要 without direct bonding between the polishing element 4 and the support layer 1〇. Additionally, in some example embodiments not illustrated in FIG. 2, the plurality of polishing elements 4 may be configured in a pattern, for example, in a two-dimensional array of elements disposed on a major surface of a branch floor, or as a template. Or a clamp for configuring the polishing element 4 prior to bonding to the support layer 10. In any of the embodiments of polishing pad 2-2 illustrated in Figures 1 through 2, at least a portion of polishing element 4 can be a porous polishing element, and portions of polishing element 4' can be substantially non-porous. Polishing components. However, it should be understood that 'in other exemplary embodiments' all of the polishing elements 4 may be selected to be porous polishing elements, or all of the polishing elements may be selected to be substantially non-porous polishing elements 4'. In some exemplary embodiments, at least one of the polishing elements is a porous polishing element, wherein each of the porous polishing elements comprises a plurality of holes. In certain exemplary embodiments, substantially all of the polishing elements are porous polishing elements. In some specific exemplary embodiments, the holes are substantially distributed throughout the porous polishing element. 153298. Doc 14 201143984 Suitable porous polishing elements are disclosed in PCT International Publication No. 2009/158665. In some presently preferred embodiments, the plurality of holes are at least partially removed from at least a portion of the polishing element 4 from the polishing pad 2-2' by at least a portion thereof, thereby leaving Corresponds to the void or pore volume previously occupied by the volume of organic particulate filler 15. In some exemplary embodiments, the organic particulate filler 15 is soluble in a solvent in which the remaining polymer phase of the polishing element 4 is substantially insoluble or only partially soluble. In some exemplary embodiments, the organic particulate filler crucible 5 comprises a water soluble, water swellable or hydrophilic polymer, and the water or aqueous solvent is used to dissolve at least a portion of the organic particulate filler 15 and thereby thereby Or a plurality of polishing elements 4 are removed, thereby producing one or more porous polishing elements. In certain exemplary embodiments, 'the aqueous solvent is selected to be the working liquid used in the chemical mechanical polishing process' and this working liquid is used to dissolve the portion of the organic particulate filler 且5 and thereby take it from one or more The polishing element 4 is removed, thereby producing one or more porous polishing elements. In the particular embodiment illustrated in Figures 1 to 2, two porous polishing elements 4 are shown along with a permeate non-porous polishing element. However, it should be understood that any number of polishing elements 4 can be used and any number can be used. The polishing element 4 is selected to be a porous polishing element 4 or a substantially non-porous polishing element 4. In some preferred embodiments, at least a portion of the polishing element 4 is a porous polishing element 'in some embodiments it has at least a porous polishing surface (14 of Figures 1 to 2) which is The polished substrate (not shown in Figure 1) forms a sliding or rotational contact. Referring again to Figure 2 to 2, throw 153298. Doc •15· 201143984 The polishing surface 14 of the light element 4 can be a substantially flat surface or can be textured. In some presently preferred embodiments, at least the polishing surface of each polishing element 4 is porous 'for example having microscopic surface openings or holes 15, which may take out holes, passages, grooves, channels, and The form of the analogue. The apertures 15 at the polishing surface can be used to facilitate distribution and maintenance of the polishing composition at the interface between the substrate (not shown) and the corresponding porous polishing element (eg, working fluids not shown in the figures and/or Abrasive polishing rong·liquid). In certain exemplary embodiments, the polishing surface 14 includes a generally cylindrical capillary 15 . The sub-hole 15 can extend from the polishing surface 14 into the polishing element 4. In a related embodiment, the polishing surface includes a generally cylindrical bore 15' that extends from the polishing surface 14 into the porous polishing element 4. The holes need not be cylindrical, and other hole geometries are possible, such as tapered, rectangular, pyramidal, and the like. In general, the characteristic dimensions of the holes can be specified as depth along with width (or diameter) and length. The characteristic pore sizes may range in depth from about 25 μηι to about 6,500 μηι in the range of from about 5 μm to about 1 μm in width (or diameter), and in length The upper range is from about 1 〇 μιη to about 2 〇〇〇 μιη. In some exemplary embodiments, the porous polishing element may have no porous polishing surface 14, but in these and other exemplary embodiments, the apertures 15 may be substantially distributed throughout the porous polishing element 4. The porous polishing elements can be used as compliant polishing elements that exhibit some of the advantageous features of a compliant polishing pad. In a presently preferred embodiment, the polishing element 4 can comprise a plurality of apertures that are substantially distributed throughout the polishing element 4 in the form of a porous foam. The I53298. Doc 201143984 The foam may be a closed cell foam or an open cell foam. In some embodiments, the closed cell foam may preferably be preferably a plurality of holes 15 in the form of a foam exhibiting a single ♦ pore size (e.g., pore diameter) distribution. In some specific exemplary embodiments, the plurality of pores exhibit an average pore size from at least about 1 nanometer (nm), at least about 1 〇〇 nm, at least about 5 〇〇 nm, or at least about 1 μηη. In other exemplary embodiments, the plurality of pores exhibit an average pore size of up to about 300 μm, up to about 1 μm, up to about 5 μm, up to about 10 μm, or up to about 0.1 μm. In some presently preferred embodiments, the plurality of pores are exhibitable from about 1 nm to about 3 μm, about 5 μm to about 1 μm, about 1 μηι to about 1 〇〇, or about The average pore size of 2 (four) to about % μηη. In an additional exemplary embodiment of the above-described polishing pad 2-2 comprising substantially non-porous polishing elements 4, at least one of the non-porous polishing elements 4 is preferably a transparent polishing element. In some exemplary embodiments, the sheet π, or the support layer 1〇, the optional guide sheet 28' optional polishing composition distribution layer 8-8, the optional compliant layer 16, the optional adhesive layer 12, at least one substantially absent The polishing element 4 of the hole, or a combination thereof, is transparent. In certain exemplary embodiments illustrated in the figures, at least one transparent non-porous polishing element 4 is attached to the sheet 13 using, for example, direct thermal bonding or using an adhesive (not shown in Figure 1). The transparent portion of the first major side 32. Furthermore, it should be understood that the polishing pad 2_2 does not need to include only substantially the same polishing element 4. By way of example, any combination or arrangement of porous polishing elements and non-porous polishing elements can constitute a plurality of polishing elements 4. It should also be understood that 'in some embodiments' it may be advantageous to use any number of porous finishes 153298. Doc 17 201143984 Element and substantially non-porous polishing element 4, any combination or arrangement thereof, to form a polishing pad having a plurality of polishing elements 4. In some exemplary embodiments, depending on the intended application, the polishing elements (4-4 in Figures 1-2) may be distributed in a variety of patterns on the sheet 13, (Fig.) or the floor 10 (Fig. 2) On the first main side, and the patterns may be regular or irregular patterns. Thus, in the polishing pad 2_2, in some exemplary embodiments, the plurality of polishing elements 4 may be arranged in a predetermined regular pattern, for example, for support. The major surface of layer 10, or configured as a stencil or clamp (not shown) for arranging the polishing elements prior to bonding to the support layer 10. After arranging the plurality of polishing elements 4 into a pattern using a stencil or jig The first major side 34 of the support layer 10 can be contacted and bonded to the plurality of polishing elements 4, for example, by direct thermal bonding to the support layer 10, or by the use of an adhesive or other bonding material. The "(iv) sheet 13' or the support layer 1Q may reside on the substantially entire surface of the sheet 13, or the support layer 1", may have regions that do not include polishing elements. In some embodiments, the polishing elements have at least 3%, At least 40% or at least 50% of the floor Average surface coverage. In other embodiments, the polishing elements have an average surface coverage of the support layer of at most about 80%, at most about 70%, or at most about 6% of the total area of the major surfaces of the support floor. The number of polishing elements, the cross-sectional area of each polishing element, and the cross-sectional area of the polishing pad are determined. In the presently preferred polishing crucible (10) exemplary embodiment illustrated by Figures 3A through 3B, the polishing elements 4 Formed integrally with the sheet 13, and disposed on the first major side 32 of the sheet U in a two-dimensional array pattern. It should be understood that the above optional layer suitable for polishing the crucible 2 can be combined (example, optional polishing combination) Distribution of objects 153298. Doc -18- 201143984 Layer 8, optional adhesive layer 12, optional compliant layer 16, optional pressure sensitive adhesive layer 18, and at least one substantially non-porous/transparent polishing element 4,) to form a map Polishing pad shown in 3 A to 3B. FIG. 3A illustrates a particular shape of the polishing element 4. It will be appreciated that the polishing element 4 can be formed in any shape, and a plurality of polishing elements 4 having two or more different shapes can be advantageously used and optionally patterned to form the polishing pad 2_2 described above. It will be further appreciated that the same shape or different shapes can be used to create a porous polishing element or alternatively a substantially non-porous polishing element. In some exemplary embodiments, the cross-sectional shape of the polishing element 4 (taken through the polishing element 4 in a direction generally parallel to the polishing surface 14) may vary widely depending on the intended application. Although Figure 3A shows a generally cylindrical polishing element 4 having a generally circular cross section, other cross-sectional shapes may be and may be required in certain embodiments. Thus, in other exemplary embodiments comprising a polishing pad 2-2' of polishing element 4-4' as previously described, the polishing elements are selected to have a shape selected from a circular elliptical shape in a first direction Cross sections of triangles, squares, rectangles, and trapezoids, and combinations thereof. For a generally cylindrical polishing element 4' having a circular cross section as shown in Figures 3A through 3B, in some embodiments, the polishing element 4 has a cross-sectional diameter of at least about 5 in a direction generally parallel to the polishing surface 14. More preferably at least about 1 mm, still more preferably at least about 5 mm. In certain embodiments, the cross-sectional diameter of the polishing element 4 in a direction generally parallel to the polishing surface 14 is at most about 20 mm, more preferably The ground is at most about 15 mm, still more preferably at most about 12 mm. In some embodiments, the polishing element 153298 is taken at the polishing surface 14. Doc 201143984 may be from about 50 μηι to about 20 mm. In certain embodiments, the diameter is from about 1 mm to about 15 mm, and in other implementations, the cross-sectional diameter is from about 5 mm to about 12 mm. Polished 2-2. In an additional exemplary embodiment, the polishing element* can be characterized by a characteristic dimension in terms of height, width and/or length. In certain exemplary embodiments, the characteristic size can be selected to be at least about 5 pm, more preferably at least about 10,000 Å, still more preferably at least about 5 Å. In certain embodiments, the polishing element 4 has a cross-sectional diameter in the direction generally parallel to the polishing surface 14 of up to about 20 mm, more preferably up to about 15 mm, still more preferably up to about 12 mm. In an additional exemplary embodiment, the 'polishing element' is characterized by at least one of the following: a height of 25 〇 (four) to 2 5 〇〇 (four) width of the brewing to 50 mm, a length of 5 melons to "mm, or The diameter is ! melon to (9) mm. In certain exemplary embodiments, one or more of the polishing elements 4_4 may be hollow. In other exemplary embodiments, each polishing element 4 is generally parallel to the polishing surface 14 The cross-sectional area in the direction can be at least about i, in other embodiments 'is at least about 1 () mm2, and in still other embodiments at least about or 20 mm2. In other example embodiments, each The cross-sectional area of a polishing element 4 in a direction generally parallel to the polishing surface 14 can be up to about 1,000 mm 2 ' in other embodiments, up to about 5 Å 2, and in still other embodiments. Up to about 25 mm 2 . In some exemplary embodiments, the polishing pad has a cross-sectional area in a direction generally parallel to a major surface of the polishing pad ranging from about 10 cm 2 to about 300,000 cm 2 ; In other embodiments, between about 1〇〇〇15329 8. Doc •20· 201143984 cm2 to about! Within the range of 〇〇〇, 〇〇〇 cm2; and in still other embodiments, it ranges from about 2,000 cm2 to about 5 〇 〇〇〇 cm2. In some exemplary implementations, each polishing element (heart 4 in Figure (1)) is spliced on the polishing pad before the polishing pad (2 in Figure 2, 2 in Figure 2) is used for the first time in the polishing operation. It extends perpendicular to the first direction of the first main side of the support layer (1 图 in FIGS. 1 to 2). In certain exemplary embodiments, the polishing elements comprise, in a first direction, an optional polishing composition distribution layer (8 in FIG. 1, 8' in FIG. 2) and/or an optional guide plate (FIG. 2) The plane above 28) extends at least about 〇, at least about (U-face, at least about 咖25 咖, at least about 〇3 _ or at least about 0. 5 mm. In other exemplary embodiments, the polishing elements comprise, in a first direction, an optional polishing composition distribution layer (8 in the figure, 8' in FIG. 2) and/or an optional guide plate (in FIG. 2) 28) The top of the plane extends up to about (7) _, up to about 7. 5 mm, up to about 5 mm, up to about 3 _, up to about 2 mm, or up to about 1 mm. In other exemplary embodiments (not shown), the polishing surface of the polishing elements can be flush with the exposed major surface of the optional polishing composition distribution layer. In other exemplary embodiments, 'the polishing surface of the polishing elements can be recessed below the exposed major surface of the optional polishing composition distribution layer, and then, for example, by removing the optional polishing composition distribution layer Part of the polishing surface of the polishing elements is flush with or extends beyond the exposed major surface of the optional polishing composition distribution layer. Such embodiments may advantageously be used with a polishing composition distribution layer selected to be selectively applied to the polishing crucible during, during, or after the polishing process or prior to contact with the workpiece. Grinding money or decay in the process 153298. Doc -21- 201143984 Money. In other exemplary embodiments, each of the polishing elements 4-4' extends in the first direction over a plane comprising the sheet 13 (Fig. 1) or the support layer 10 (Fig. 2) to at least about 0. 25 mm, at least about 0. 3 mm, or at least about 0. 5 mm. In additional exemplary embodiments, the polishing surface (14 in Figures 1-2) is higher than the height of the base or bottom of the polishing element (i.e., the height (H) of the polishing element) may be zero. 25 mm, 0. 5 mm, 1. 0 mm, 1. 5 mm, 2. 0 mm, 2. 5 mm, 3. 0 mm, 5. 0 mm, 10 mm or more, depending on the polishing composition used and the material selected for the polishing element. Referring again to Figures 1 through 2, the openings in the entire optional polishing composition distribution layer (8 in Figure 1, 8 in Figure 2) and/or optional guide plate 28 (Figure 2) (in the figure) 6) The depth and spacing can be varied as needed for a particular CMP process. In some embodiments, the specialized polishing members (4 - 41 in FIGS. 1 to 2) are each disposed relative to each other and the polishing composition distribution layer (8 in FIG. 1, 28 in FIG. 2) and the guide plate 31 substantially. The upper surface is maintained in a planar orientation and extends over the surface of the optional polishing composition distribution layer (8 in Figure 1, 8 in Figure 2) and/or optional guide plate 28. In some exemplary embodiments, the polishing element 4 is above any of the optional guide plates (28 of Figure 2) and any of the optional polishing composition distribution layers (8 in Figure 8, 8' in Figure 2) The void volume created by the extension provides space for the distribution of the polishing composition on the surface of the optional polishing composition distribution layer (8 in Figure 1, 8 in Figure 2). The polishing element 4 protrudes above the polishing composition distribution layer (8 in Fig. 1, 8 in Fig. 2) by at least in part depending on the material properties of the polished 7L member and the polishing composition (working fluid and/or Abrasive slurry I53298. Doc •22· 201143984 Liquid) The desired flow above the surface of the polishing composition distribution layer (8 in Figure i, 8 in Figure 2). In another alternative exemplary embodiment (not illustrated in the figures), the present invention provides a textured polishing pad comprising an organic particulate filler and a second continuous polymer phase, wherein the polishing pad has a first major side and The first major side is opposite the second major side, and further wherein at least one of the first major side and the second major side includes a plurality of grooves extending into the side. In certain exemplary embodiments, the depth of the grooves is from about 1 micron (μm) to about 5, 〇〇〇 μπι. In other exemplary embodiments, the polishing pad has a circular cross-section in a direction substantially perpendicular to the first and second sides, wherein the circle defines a radial direction, and further wherein the plurality of grooves are circular 'concentric And spaced apart in the radial direction. In other exemplary embodiments (not illustrated), the polishing surface of the textured polishing pad includes apertures in the form of a plurality of channels, wherein each channel preferably extends across the polishing direction generally parallel to the polishing surface. At least a portion of the surface "Preferably, each channel is a circular channel that extends radially around the circumference of the polishing surface in a direction generally parallel to the polishing surface. In other embodiments, a plurality of channels form a series of radially spaced concentric circular grooves in the polishing surface. In other exemplary embodiments (not illustrated), the apertures may take the form of a two-dimensional array of channels, with each channel extending only across a portion of the polishing surface. In other example embodiments (not illustrated in the figures), the channels may have virtually any shape, such as a cylinder, a triangle, a rectangle, a trapezoid, a hemisphere, and combinations thereof. In some exemplary embodiments, each channel is selected to be 153298 along a depth substantially perpendicular to the direction of the polishing surface of the polishing element. Doc -23- 201143984 Choose between at least about 10 μηι, 25 μΓη, 5〇 μΐΏ, 1〇〇叩 to about 10,000 μηι, 7,500 μπι, 5,000 μηι, 2,500 μηη, 1, 〇〇〇 范. In other exemplary embodiments, the cross-sectional area of each channel in a direction generally parallel to the polishing surface of the polishing element is selected to range from about 75 square microns (μ〆) to about 3Χ106 μπ12. The composition of the polishing pad described above comprises a continuous polymer phase filled with an interactive organic filler. The continuous polymer phase is characterized by a thermoplastic or thermoset elastomer and the dispersed phase is characterized by a thermoplastic or thermoset polymer. In some exemplary embodiments of the polishing pad described above, the polishing surface comprises a thermoplastic polyurethane, an acrylated polyamine methyl ester, an epoxidized polyurethane, an epoxidized rubber, Vinyl resin, cyclopentadiene, ethylene riding and combinations thereof. In some exemplary embodiments of a polishing pad comprising a plurality of polishing elements 4, at least some of the polishing elements comprise a thermoplastic polyurethane in the form of a continuous polymer phase, a acrylated polyurethane, epoxidized poly Amino carboxylic acid vinegar, epoxidized rubber, vinyl resin, cyclopentadiene resin, ethyl (tetra) resin, polyacrylic acid or a combination thereof. In certain exemplary embodiments, the right organic particulate filler comprises at least one of a thermoplastic poly-type or a thermoset polymer. In some example implementations, organic particulate fillers include at least one of polythene, % polycarbon, or polystyrene thermoplastic elastomers. In some specific example implementations, you have a 'polyolefin system' It is selected from the group consisting of polyethylene, gluten propylene, polybutene, polyisobutylene, polyoctene, copolymers thereof, and combinations thereof. In other specific embodiments, the shoulder machine particulate filler comprises a water soluble or water swellable polymer' for example, Polyethylene 153298. Doc •24· 201143984 Enol, poly(ethylene oxide), poly(vinyl alcohol), poly(vinylpyrrolidone), polyacrylic acid, poly(meth)acrylic acid, combinations thereof and the like. In other exemplary embodiments, the organic particulate filler comprises from about 5% by weight to about 9% by weight of each polishing element. In additional exemplary embodiments, the organic particulate filler is characterized by at least one of: 5 microns to 5,000 microns in length, 5 microns to 25 microns in width, and 5 microns to 1 in spherical diameter. 〇〇微来, or a combination thereof. Polished elements can also include reinforcing polymers or other composite materials including, for example, metal particles, ceramic particles, polymer particles, fibers, combinations thereof, and the like. In some embodiments, the polishing element may be rendered electrically and/or thermally conductive by the inclusion of a filler such as carbon, graphite, metal or combinations thereof. In other embodiments, a conductive polymer may be used in the presence or absence of the above-described conductive or thermally conductive filler, such as, for example, polyaniline (pANI) sold under the trade name ORMECOM (available from 〇rmec〇n (10)" (Ammersbek, Germany) available in some example applications +, for the raw polishing element #, the continuous phase polymer resin precursor system can be ground together with the micronized organic particle powder to produce dispersed organic particles a reactive slurry. The filled reactive slurry can then be directly cast into a mold or b-staged and molded under pressure to produce a patterned surface comprising an integrally molded polishing element. At least partially cured polymer After the resin precursor, a sheet having the desired pattern of polishing elements can be obtained, and the sheet can then be secured to the compliant support layer to form a compliant polishing pad. Alternatively, the support layer can be compliant during the film or molding operation. Press to the integrally molded polished surface. Pressure sensitive adhesive 153298 can also be used. Doc •25· 201143984 The agent adheres the bottom surface of the compliant material to the surface of the polishing plate used for semiconductor polishing. In any of the above exemplary embodiments of the polishing pad, the polishing surface is formed by a phase separated polymer blend comprising a continuous polymer phase and immiscible at room temperature An organic particulate filler in the continuous polymer phase. The dispersed organic particle phase can be controlled by controlling the particle size of the dispersed organic particles, for example, by controlling the milling conditions and/or duration. Polymeric films formed from such types of immiscible blend systems characteristically flow out of the dispersed organic particulate phase upon rupture or scratching. Thus, if the surface of the crucible is formed from a polymer binder of this type, the surface may be characterized by a porosity resulting from the outflow or release of the dispersed organic particle phase. In other exemplary embodiments, the plurality of holes are produced in at least some of the polishing elements by self-polishing pad 2-2, at least a portion of which is at least partially removed from at least a portion of the organic particulate filler 15 thereby leaving Corresponding to (4): or pore volume previously occupied by the volume of the organic particulate filler 15. In some exemplary embodiments, the organic particulate filler is soluble in the first continuous polymer phase 13 in a solvent that is insoluble or only partially soluble. In some exemplary embodiments, the organic particulate filler comprises a water soluble, water swellable or hydrophilic thermoplastic polymer, and the water or aqueous solvent is used to dissolve at least a portion of the organic particulate filler 15 and thereby thereby from one or more The polishing elements 4 are removed, thereby producing one or more porous polishing elements. Suitable water-soluble polymers include poly(ethylene oxide), poly(ethylene glycol), poly(ethylene bromidone), polyacrylic acid, poly(meth)acrylic acid, and copolymers thereof with other monomers. And their combinations. 153298. Doc • 26 - 201143984 In some difficult implementations, water (4) is selected as the working fluid used in the chemical mechanical polishing process' and this servant liquid is used to dissolve at least part of the organic particulate filler 15 and thereby One or more polishing elements 4 are removed ' thereby creating one or more porous polishing elements. In other exemplary embodiments of the polishing pad described above, the organic particulate filler comprises about 1% by weight of each polishing element. 5% by weight, 5% by weight or 1% by weight to about 50% by weight. /. 60% by weight, 70% by weight, 8% by weight, or 9% by weight. In certain exemplary embodiments, the organic particulate filler is characterized by at least - a length of 5 μηι to 5, 〇〇 〇μηι, width - to 25 - equivalent spherical diameter is 5 to (10) (four), or a combination thereof. Preferably, the organic particulate filler has a median diameter of substantially 5 μηι > 10 μηι > 20 μπι ' 30 200 μηι, 150 μηι, 100 pm μηι. Uniformly spherical, and exhibiting at least 丨μηη, μηι, 40 pm, 5〇μηι, and at most, 90 μm, 80 μηη, 70 μιη, or 60 in other exemplary embodiments of any of the above polished crucibles, 13', support layer 1G or textured polishing crucible may be incompressible, such as a rigid film or other hard substrate, but is preferably compressible to provide a positive pressure directed toward the polishing surface. In some exemplary embodiments, the sheet or slab may comprise a flexible compliant material, such as a compliant compound. In other exemplary embodiments, the sheet, support layer or crucible (4) is made of a compressible polymeric material (preferably via a foamed polymeric material). In certain embodiments, the closed cell foam may preferably be 'but in other embodiments' an open cell foam may be used. In an additional exemplary implementation, the polishing elements can be formed as an integral polishing element sheet attached to the layer with the support layer, the branch 153298. Doc •27- 201143984 The slab can be a compressible or compliant support layer. The sheet or support layer is preferably liquid impermeable to prevent penetration of the working fluid. Or penetrate into or penetrate or penetrate from the support layer. However, in some embodiments the 'sheet or support layer may comprise a liquid permeable material, either alone or in combination with an optional barrier, which is used to prevent or inhibit penetration or penetration of liquid from the support layer. Further, in other embodiments, a porous sheet or support layer may be advantageously employed, for example, to maintain a working fluid (e.g., a polishing slurry) at the interface between the polishing pad and the workpiece during polishing. In certain exemplary embodiments, the sheet or support layer may comprise a material selected from the group consisting of polyfluorene oxide, natural rubber, styrene-butadiene rubber, butyl rubber, polyamino phthalate, polyester, polyethylene, and Combined polymeric material. The sheet or support layer may further comprise a wide variety of additional materials such as fillers, granules, fibers, reinforcing agents, and the like. Polyurethanes have been found to be particularly useful as sheet or support layer materials, with thermoplastic polyamine phthalic acid (TPU) being preferred. In some presently preferred embodiments, the support layer comprises, for example, one or more of the following TPUs.
膜.ESTANE TPU(可自 OH、Cleveland之 Lubrizol Advanced Materials公司購得）、texIN4DESM0PAN TPU(可自 PA、 Pittsburgh 之 Bayer Material Science購得）、PELLETHANE TPU(可自 MI、Midland之 Dow Chemical Company 購得）及 類似TPU。 在一些實例性實施例中’拋光墊進一步包括與該等拋光 元件相對地附加至支撐層之順應層丨6。該順應層可藉由接 合表面之任一構件附加至支撐層，但較佳地使用定位於該 153298.doc -28- 201143984 順應層與該支撐層之間的界面處之黏著層將該支標層與該 等拋光元件相對地附加至順應層。 在某些實施例中，該順應層較佳地可壓縮以在拋光期間 提供朝向工件引導該等拋光元件之拋光表面的正壓力。在 某些實例性實施例中’支撐層可包括撓性順應材料，諸如 順應橡膠或聚合物。在其他實例性實施财，該支樓層較 佳係由可壓縮聚合物材料（經發泡聚合物材料較佳）製成。 在某些實施例中’閉孔發泡體可較佳，但在其他實施例 中，可使用開孔發泡體。 在-些特定實施例中，順應層可包括選自聚⑪氧、天然 橡膠、苯乙烯-丁二烯橡膠、氣丁橡膠、聚胺基曱酸酯、 聚乙稀及其共聚物、及其組合之聚合物材料。該順應層可 進-步包括各種各樣的額外材料，諸如填料、顆粒、纖 維、增強劑及類似材料。該順應層較佳地液體不可滲透 (儘管可滲透材料可與可選障壁結合使用α防止或抑制液 體穿透至該順應層中）。 供在順應層中使用之目前較佳之聚合物材料係聚胺基甲 酸酯，其中TPU尤佳。適宜之聚胺基曱酸酯包含（例如广 可以商品名PORON自CT ' Rogers之Rogers公司購得之彼等 聚胺基甲酸酯以及可以商品名PELLETHANE自MI、 Midland之Dow Chemical購得之彼等聚胺基曱酸酯（尤其 PELLETHANE 2102-65D)。其他適宜材料包含聚對苯二曱 酸乙二酯（PET)(例如可以商品名MYLAR廣泛購得之雙軸定 向PET)以及經接合之橡膠薄片（例如可以商品名 153298.doc -29- 201143984 自 CA、Santa Ana 之 Rubberite Cypress Sponge RubberMembrane. ESTANE TPU (available from OH, Cleveland Lubrizol Advanced Materials), texIN4DESM0PAN TPU (available from PA, Bayer Material Science of Pittsburgh), PELLETHANE TPU (available from MI, Dow Chemical Company of Midland) And similar to TPU. In some exemplary embodiments, the polishing pad further includes a compliant layer 6 attached to the support layer opposite the polishing elements. The compliant layer may be attached to the support layer by any of the joining surfaces, but preferably the anchor is positioned at an interface located at the interface between the compliant layer and the support layer of the 153298.doc -28- 201143984 A layer is attached to the compliant layer opposite the polishing elements. In some embodiments, the compliant layer is preferably compressible to provide a positive pressure to direct the polishing surface of the polishing elements toward the workpiece during polishing. In certain exemplary embodiments, the support layer can comprise a flexible compliant material such as a compliant rubber or polymer. In other exemplary implementations, the floor is preferably made of a compressible polymeric material (preferably via a foamed polymeric material). In some embodiments, a closed cell foam may be preferred, but in other embodiments, an open cell foam may be used. In some specific embodiments, the compliant layer may comprise a polymer selected from the group consisting of poly 11 oxygen, natural rubber, styrene-butadiene rubber, butyl rubber, polyamino phthalate, polyethylene, and copolymers thereof, and Combined polymeric material. The compliant layer can include a wide variety of additional materials such as fillers, granules, fibers, reinforcing agents, and the like. The compliant layer is preferably liquid impermeable (although the permeable material can be used in conjunction with the optional barrier to prevent or inhibit liquid penetration into the compliant layer). The currently preferred polymeric material for use in the compliant layer is a polyurethane, with TPU being preferred. Suitable polyamino phthalates include, for example, those widely available under the trade designation PORON from Rogers, Inc. of CT 'Rogers, and those available under the trade designation PELLETHANE from MI, Midland, Dow Chemical. Polyamino phthalate (especially PELLETHANE 2102-65D). Other suitable materials include polyethylene terephthalate (PET) (for example biaxially oriented PET, widely available under the trade name MYLAR) and bonded Rubber sheet (for example, Rubberite Cypress Sponge Rubber, available from CA, Santa Ana, under the trade name 153298.doc -29- 201143984
Products公司購得之橡膠薄片）。 在一些實例性實施例中’根據本發明之拋光墊2_2，在 CMP製程中使用時具有某些優點，例如：經改良之晶圓内 拋光均勻度、較扁平之經拋光晶圓表面、自晶圓之邊緣晶 粒良率增加及經改良2CMP製程運作範圍及一致性。儘管 不希望觉任一特定理論之約束，但可由自下伏於支樓層之 順應層去耦拋光元件之拋光表面來產生此等優點，藉此在 拋光製程期間當使拋光墊接觸至工件時，允許該等拋光元 件在貫質上垂直於该專元件之抛光表面之方向上「浮 動」。 在拋光墊2,之一些實施例中，可藉由將拋光物件併入可 選導向板28中來增強拋光元件之拋光表面自順應層之去 耗’該導向板包含自第一主表面穿過該導向板延伸至第二 主表面之複數個開孔’其中每一抛光元件之至少一部分延 伸至相應開孔口中’且其中每一拋光元件均自該導向板之 第二主表面向外延伸。可使用較佳包括剛性或非順應材料 之可選導向板來維持拋光表面之空間定向，以及維持該等 元件在拋光墊上之橫向移動。然而，在其他實施例中，不 需要s亥可選導向板’此乃因藉由將抛光元件接合至支樓層 (較佳地藉由將抛光元件直接熱接合至支撐層）來維持該等 元件之空間定向且防止橫向移動。 可選導向板28可由各種各樣的材料製成，例如聚合物、 共聚物、聚合物摻合物、聚合物複合物或其組合。剛性非 153298.doc •30· 201143984 順應之不導電及液體不可滲透聚合物材料通常較佳，且已 發現聚碳酸酯尤其有用。 在其他實施例中，本發明之拋光塾可進一步包括覆蓋薄 片或支撐層之第一主側之至少一部分及可選導向板（若存 在）之第一主表面的可選拋光組合物分佈層8_8,。該可選拋 光組合物分佈層可由各種各樣的聚合物材料製成。在一些 實施例中，可選拋光組合物分佈層可包括至少一種親水性 聚合物。較佳之親水性聚合物包含聚胺基甲酸酯、聚丙稀 酸醋、聚乙烯醇、聚甲醛及其組合。在一個特定實施例 中，拋光組合物層可包括較佳在約5重量％至約6〇重量％之 I巳圍中之水凝朦材料（例如可吸收水之親水性聚胺基曱酸 醋或聚丙烯酸酯）以在拋光作業期間提供光滑表面。 在額外實例性實施例中，可選拋光組合物分佈層包括順 應材料（例如’多孔聚合物或發泡體），以在拋光作業期間 當該拋光組合物分佈層受到壓縮時提供朝向基板引導之正 壓力°在某些實例性實施例中，拋光組合物分佈層之順應 性經選擇以小於可選順應層之順應性。在某些實施例中， 具有開孔或閉孔之多孔或經發泡材料可為供在可選拋光組 5物刀佈層中使用之較佳順應材料。在一些特定實施例 中’可選拋光組合物分佈層具有介於約10%與約9〇%之間 的孔隙率。 在某些實例性實施例中，順應層藉由順應層與第二主側 之間之界面處之黏著層附加至第二主側。 在其他實例性實施例中，可使拋光元件之拋光表面與可 153298.doc -31 · 201143984 凹入到該主表面Rubber sheets purchased by Products). In some exemplary embodiments, the polishing pad 2_2 according to the present invention has certain advantages when used in a CMP process, such as: improved in-wafer polishing uniformity, flattened polished wafer surface, self-crystallized Increased grain yield at the edge of the circle and the operating range and consistency of the improved 2CMP process. Although not wishing to be bound by any particular theory, such advantages may be derived by decoupling the polishing surface of the polishing element from the compliant layer underlying the support floor, thereby allowing the polishing pad to contact the workpiece during the polishing process. The polishing elements are allowed to "float" in a direction perpendicular to the polishing surface of the element. In some embodiments of the polishing pad 2, the removal of the polishing surface of the polishing element from the compliant layer can be enhanced by incorporating the polishing article into the optional guide plate 28 comprising the passage from the first major surface. The guide plate extends to a plurality of openings of the second major surface 'where at least a portion of each polishing element extends into the respective aperture opening' and wherein each polishing element extends outwardly from the second major surface of the guide plate. An optional guide plate, preferably comprising a rigid or non-compliant material, can be used to maintain the spatial orientation of the polishing surface and to maintain lateral movement of the components over the polishing pad. However, in other embodiments, there is no need for an optional guide plate because the elements are maintained by bonding the polishing elements to the support floor (preferably by directly thermally bonding the polishing elements to the support layer). The space is oriented and prevents lateral movement. The optional guide plate 28 can be made from a wide variety of materials such as polymers, copolymers, polymer blends, polymer composites, or combinations thereof. Rigid non-153298.doc •30· 201143984 Compliance with non-conductive and liquid impermeable polymeric materials is generally preferred, and polycarbonate has been found to be particularly useful. In other embodiments, the polishing cartridge of the present invention may further comprise an optional polishing composition distribution layer 8_8 covering at least a portion of the first major side of the sheet or support layer and the first major surface of the optional guide sheet (if present). ,. The optional polishing composition distribution layer can be made from a wide variety of polymeric materials. In some embodiments, the optional polishing composition distribution layer can include at least one hydrophilic polymer. Preferred hydrophilic polymers include polyurethanes, polyacetates, polyvinyl alcohols, polyoxymethylenes, and combinations thereof. In a particular embodiment, the polishing composition layer can comprise a hydrogel material preferably in the range of from about 5% by weight to about 6% by weight of the barrier layer (eg, water-absorbable hydrophilic polyamine phthalic acid vinegar) Or polyacrylate) to provide a smooth surface during the polishing operation. In additional exemplary embodiments, the optional polishing composition distribution layer comprises a compliant material (eg, a 'porous polymer or foam) to provide orientation toward the substrate as the polishing composition distribution layer is compressed during the polishing operation Positive Pressure ° In certain exemplary embodiments, the compliance of the polishing composition distribution layer is selected to be less than the compliance of the optional compliant layer. In certain embodiments, the porous or foamed material having open or closed cells can be a preferred compliant material for use in an optional polishing set. In some particular embodiments, the optional polishing composition distribution layer has a porosity of between about 10% and about 9%. In some exemplary embodiments, the compliant layer is attached to the second major side by an adhesive layer at the interface between the compliant layer and the second major side. In other exemplary embodiments, the polishing surface of the polishing element can be recessed into the major surface with 153298.doc -31 · 201143984
前、期間或之後在施加至拋光墊之拋光表面 選拋光組合物分佈層之曝露主表面齊平或 下面。可有利地採用此等實施例以將工 與工件接觸之 之可選調節製 程中受到磨触或腐I虫。 在額外實例性實施例中，拋光組合物分佈層可用以跨越 正經歷拋光之基板表面實質上均勻地分佈拋光組合物此 可提供更均勻抛光。拋光組合物分佈層可視情況包含阻流 元件（例如’擋板、凹槽（未顯示於該等圖中）、孔及類似 物）以在拋光期間調節拋光組合物之流動速率。在其他實 例性實施例中’拋光組合物分佈層可包含各種不同材料層 以在自拋光表面之不同深度處達成期望拋光組合物流動速 率。 在一些實例性實施例中，拋光元件中之一或多者可包含 界定於拋光元件内之開放核心區域或腔，儘管不需要此配 置。在一些實施例中，如PCT國際公開案第WO 2006/055720號中所述，拋光元件之核心可包含感測器以 偵測壓力、傳導性、電容、渦電流及類似物。在又一實施 例中，拋光墊可包含在垂直於拋光表面之方向上延伸穿過 該墊之窗，或可使用透明層及/或透明拋光元件以允許拋 光製程之光學終點，如PCT國際公開案第WO 2009/140622 號中所述。 I53298.doc •32· 201143984 本發明進一步係針對如上文所述在拋光製程中使用拋光 塾之方法’該方法包含使基板之表面與包括複數個拋光元 件（至少一些拋光元件係多孔）之拋光墊之拋光表面接觸， 且使該拋光墊相對於該基板相對移動以磨蝕該基板之表 面。在某些實例性實施中，可向拋光墊表面與基板表面之 間的界面提供工作液體。業内已知適宜之工作液體，且可 參照（例如）美國專利第6,238,592 61號、第6,491,843⑴號 及PCT國際公開案第WO 2002/33736號。 在一些實施例中，製造本文中所述之拋光墊可係相對容 易且低廉。下文闡述對用於製造根據本發明之拋光墊之一 些實例性方法的簡要論述，該論述並非意欲為窮盡性或以 其他方式限制性。 因而，在另一實例性實施例中’本發明提供一種製造上 述拋光墊之方法’該方法包含在施加熱下使第一聚合物與 第二聚合物混合形成流體模製組合物，將該流體模製組合 物分配於模具中，冷卻該流體模製組合物以形成拋光墊， 該拋光墊包含包括第一聚合物之第一連續聚合物相及包括 第一聚合物之有機顆粒填料’其中該拋光塾具有第一主側 或表面及與該第一主側或表面相對之第二主側或表面。 在額外實施例中，本發明提供一種製造上述拋光墊之方 法’該方法包含將有機顆粒填料分散於包括聚合物前體材 料之可固化組合物中’將該可固化組合物分配於模具中， 在該模具中固化該可固化組合物以形成含有分散有機顆粒 填料之聚合物薄片，該聚合物薄片具有第一主側及與該第 I53298.doc •33· 201143984 一主側相對之第二主側、及自第一主側沿實質上垂直於該 第一主側之第一方向向外延伸的複數個拋光元件，其中該 等拋光元件與薄片整體形成且橫向連接以便限制該等抛光 元件相對於其他拋光元件中之一或多者橫向移動，但沿實 質上垂直於抛光元件之拋光表面之轴仍可移動。 在一些實例性實施例中，將有機顆粒填料分散於連續聚 合物相中包括熔融混合、揉壓、擠出或其組合。在某些實 例性實施例中，將流體模製組合物分配於模具中包括反應 注射模製、擠出模製、壓縮模製、真空模製或其組合中之 至少一者。在一些特定實例性實施例中，分配包括藉助膜 沖模將流體模製組合物連續擠至澆注輥上，另外其中該澆 注報之表面包括模具。 在製造上述紋理化拋光墊之額外實例性實施例中，該方 法進一步包含對第一及第二主側争之至少一者進行研磨以 形成延伸至該側中之多個凹槽。在某些實例性實施例中， 凹槽之深度為約1 μπι至約5,000 μπι。在一些特定實例性實 施例中，拋光墊在實質上垂直於第一及第二側之方向上具 有圓形橫截面，其中該圓界定徑向方向，且另外其中複數 個凹槽為圓形，同心且在徑向方向上間隔開。 _在製造拋光墊2之替代實例性實施例中(其中複數個拋光 牛之至少-部分包括分散於上述連續聚合物相中之有機 顆粒填料Η莫具包含三維圖案，且第一主表面包括多個 對應於該三維圖案之印記的拋光元件’其中該複數個拋光 兀件自第-主側沿實質上垂直於該第一主側之第一方向向 153298.doc -34- 201143984 外延伸，另外其中該等拋光元件與薄片整體形成且橫向連 接以便限制該等拋光元件相對於其他拋光元件中之一或多 者橫向移動，但沿實質上垂直於拋光元件之拋光表面之軸 仍可移動。 該複數個拋光元件可自含有分散有機顆粒之熔融聚合物 連續相使用（例如）擠出模製或壓縮模製形成。為使用擠出 模製生成拋光元件，可將含有分散有機顆粒之熔融聚合物 的混合物餵入雙螺杆擠出機中，該雙螺杆擠出機配備有膜 沖模及具有拋光元件期望之預定圖案之澆注輥。或者，可 製造包括分散有機顆粒之聚合物膜且在第二作業中利用具 有拋光元件期望之預定圖案之模製板進行壓縮模製。在薄 片上產生拋光元件之期望圖案後，可（例如）藉由熱接合至 熱接合膜或藉由使用黏著劑將該薄片緊固至順應支撐層。 或者，可在膜澆注或壓縮模製期間將順應支撐層層壓至拋 光表面。 在圖解說明整體拋光墊之一個尤其有利之實施例中，多 腔模具可具有回填室，其中每一腔對應於拋光元件。複數 個拋光70件（其可包含如本文中所述之多孔拋光元件及無 孔拋光7L件）可藉由將適宜聚合物熔體注射模製至多腔模 具中並以相同聚合物熔體或另一聚合物熔體回填該回填室 以形成支撑層而形成。纟冷卻該模㈣，拋《元件保持附 加至支撐層，藉此藉助該支撐層形成複數個拋光元件作為 整體拋光7C件薄〇在—些實施例中，模具可包括旋轉親 模具。 153298.doc -35· 201143984 在另一實施例中’可在個別隆起拋光元件之間對拋光元 件之整體模製之薄片進行刻痕以生成個別浮動拋光元件的 抛光表面。或者’亦可在模製製程中藉由將隆起區納入個 別隆起元件之間之模具中完成分離。 適宜模製材料、模具、裝置及形成拋光元件之完整薄片 的方法閒述於下文實例及pCT國際公開案第W〇 2009/158665號中。 在又一替代實施例中’本發明提供一種製造上述拋光墊 2’之方法’該方法包含形成包含第一連續聚合物相及分散 於其中之有機顆粒填料的多個拋光元件，及將該等拋光元 件接合至具有與第一主側相對之第二主側之支撐層的第一 主側以形成拋光墊《在一些實例性實施例中，該方法進一 步包含將順應層附加至第二主側。在其他實例性實施例 中，該方法進一步包含附加拋光組合物分佈層以覆蓋第一 主側之至少一部分。 在一些實例性實施例中，該方法額外包含在第一主側上 與拋光元件一起形成圖案。在某些實例性實施例中，形成 圖案包括將拋光元件反應注射模製成圖案、將拋光元件擠 出模製成圖案、將拋光元件壓縮模製成圖案、將拋光元件 配置於對應於圖案之模板中、或將拋光元件於支撐層上配 置成圖案。在一些特定實例性實施例中，將拋光元件接合 至支撐層包括熱接合、超音波接合、光化輻射接合、黏著 劑接合及其組合。 在某些目前較佳之實施例中，拋光元件熱接合至支撐 153298.doc •36· 201143984 層。可藉由（例如）使支撐層之主表面與每一拋光元件之表 面接觸以形成接合界面並將拋光元件及支撐層加熱至該等 拋光7L件及支撐層一起軟化、熔化或流動所處於之溫度以 在該合界面處形成接合來達成熱接合。亦可使用超音波焊 接來實現將拋光元件熱接合至支撐層。在一些目前較佳之 實施例中，在加熱拋光元件及支撐層的同時向接合界面施 加壓力。在其他目前較佳之實施例中，將支撐層加熱至大 於將拋光元件加至的溫度之溫度。 在其他實例性實施例中，將拋光元件接合至支撐層涉及 使用接合材料，該接合材料在拋光元件與支撐層之主表面 之間的界面處形成物理及/或化學結合。在某些實施例 中，可使用定位於每一拋光元件與支撐層之主表面之間的 接合界面處之黏著劑來形成此物理及/或化學結合。在其 他實施例中，接合材料可為藉由固化（例如，藉由熱固 化、輻射固化（例如，使用諸如紫外光、可見光、紅外 光、電子束或其他輻射源之光化輻射之固化）及類似方式） 來形成接合之材料。 適宜接合膜材料、裝置及方法闡述於PCT國際公開案第 WO 2010/009420號中。 在額外目前較佳之實例性實施例中，拋光元件之至少一 部分包括多孔拋光元件。在一些實例性實施例中，至少一 些拋光元件包括貫質上無孔拋光元件。在一些特定實例性 實施例中，多孔拋光元件係藉由以下步驟形成：注射模製 氣體飽和聚合物熔體、注射模製在反應時放出氣體以形成 153298.doc •37· 201143984 聚合物之反應性混合物、注射模製包括溶解於超臨界氣體 中之聚合物之混合物、注射模製在溶劑中不相容之聚合物· 之混合物、注射模製分散於熱塑性聚合物中之多孔熱固顆 粒、注射模製包括微球之混合物及其組合。在額外實例性 實施例中’藉由反應注射模製、氣體分散發泡及其組合形 成孔。 在一些實例性實施例中，多孔拋光元件具有實質上分佈 於整個拋光元件上之孔。在其他實施例中，該等孔可大致 分佈於多孔拋光元件之拋光表面處。在一些額外實施例 中，賦予給多孔拋光元件之拋光表面的孔隙率可（例如）藉 由注射模製、壓延、機械鑽孔、雷射鑽孔、針穿孔、氣體 分散發泡、化學處理及其組合賦予。 應瞭解’抛光墊無需僅包括實質上相同之拋光元件。因 而，舉例而言，多孔拋光元件及無孔拋光元件之任一組合 或配置可構成複數個多孔拋光元件。亦應瞭解，在某些實 施例中，可有利地使用任一數目之多孔拋光元件及實質上 無孔拋光元件及其任一組合或配置以形成具有接合至支撐 層之浮動拋光元件之拋光塾。 在其他實例性貫施例中’拋光元件可經配置以形成圖 案。可有利地採用任一圖案。舉例而言，該等拋光元件可 經配置以形成二維陣列’例如，矩形、三角形或圓形拋光 70件陣列。在額外實例性實施例中，拋光元件可包含在支 撐層上配置成圖案之多孔拋光元件及實質上無孔拋光元件 兩者。在某些實例性實施例中，多孔拋光元件可有利地相 153298.doc •38· 201143984 對於任何實質上無孔拋光元件配置，以在支撐層之主表面 上形成多孔拋光元件及無孔拋光元件之一配置。在此等實 施例中’可有利地選擇多孔拋光元件相對於實質上無孔拋 光元件之數目及配置以獲得所需之拋光效能。 舉例而言，在一些實例性實施例中，多孔拋光元件可實 質上接近拋光墊之主表面的中心配置，且實質上無孔拋光 凡件可實質上接近拋光墊之主表面之周邊邊緣配置。此等 實例性實施例可期望地將工作液體（例如，磨料拋光漿液） 更有效地保持在拋光墊與晶圓表面之間的接觸區中，藉此 改良晶圓表面之拋光均勻度（例如，晶圓表面處減小之凹 陷）以及減小CMP製程所產生之廢漿液量。此等實例性實 施例亦可期望地在晶粒邊緣處提供更具侵蝕性之拋光，藉 此減小或消除邊緣脊之形成且改良良率及晶粒拋光均勻 度。 在其他貫例性實施例中，多孔拋光元件可實質上接近拋 光墊之主表面之邊緣配置，且實質上無孔拋光元件可實質 上接近拋光墊之主表面之中心配置。只要屬於本發明之範 疇内，即可涵蓋拋光元件之其他配置及/或圖案。 在製造上述拋光墊2,之某些實施例中，拋光元件可藉由 置；支標層之主表面上配置成圖案。在其他實例性實施例 中可使用期望圖案之模板將拋光元件配置成圖案，且可 在接合之前將該支撐層定位於拋光元件及模板上方或下 方，其中該支撐層之主表面在接合界面處接觸每一拋光元 件0 153298.doc •39- 201143984 具有根據本發明之拋光元件之拋光塾之實例性實施例可 具有能夠使其用於各種拋光應用之各種特徵及特性。在一 些目前較佳之實施例中，本發明之拋光墊可尤其適於用於 製造積體電路及半導體器件中之晶圆之化學機械平坦化 (CMP)。在某些實例性實施例中’本揭示内容中所述之拋 光塾可提供優於業内已知之拋光墊的優點。 舉例而言，在一些實例性實施中，根據本發明之拋光墊 可用於將在CMP製程中所使用之工作液體更好地保持在該 塾之拋光表面與正拋光之基板表面之間的界面處，藉此改 良該工作液體在增強拋光中之效率。在其他實例性實施例 中’根據本發明之拋光墊可減少或消除晶圓表面在拋光期 間之凹陷及/或邊緣腐蝕。在一些實例性實施例中，在 CMP製程中使用根據本發明之拋光墊可產生改良之晶圓内 拋光均勻度、較平坦之經拋光晶圓表面、自晶圓之邊緣晶 粒良率之增加及經改良之CMP製程運作範圍及一致性。 在其他實例性實施例中，使用具有根據本發明實例性實 施例之多孔元件的拋光墊可准許處理較大直徑晶圓同時維 持所需表面均勻度程度以獲得高晶片良率，在需要調節墊 表面以維持晶圓表面之拋光均勻度之前處理更多晶圓或減 少處理時間及墊調節器之磨損。 在形成紋理化拋光墊中使用存於連續聚合物相令之分散 有機顆粒的另一優點係明顯易於機械處理或研磨該表面。 市售CMP墊通常由交聯聚胺基甲酸g旨發泡體構成，該等發 ’包體抗研磨’且其在不撕裂或損害發泡體情形下極其難以 153298.doc 201143984 研磨。本文所述固體熱塑性紋理化拋光墊材料在研磨作業 期間變形較少，因此使得較易於研磨並產生清潔表面。 現將參照以下非限制性實例圖解說明根據本發明之實例 性拋光墊。 實例 以下非限制性實例圖解說明用於製備多孔及無孔拋光元 件之各種方法，其可用於製備包括複數個接合至支撐層之 拋光元件的拋光墊。 實例1 使用以下程序完成根據本發明實例性實施例之拋光墊2 的製作。在容器中，將14.9 g微粉化合成蠟MP-22XF(來自 Micro Powders公司，Tarrytown，NY)與 92.5 g TDI-聚謎預 聚物 Airthane® PHP-75D(來自 Air Products and Chemicals 公司，Allentown, PA)混合，從而形成分散液。在1品脫金 屬容器中，合併12.0 g寡聚物二胺聚氧四亞曱基-二-對-胺 基苯曱酸酯 VERSALINKP-650® OLIGOMERIC DIAMINE (來自 Air Products and Chemicals公司）與 50.0 g 4,4’-亞曱 基-雙（3-氣-2,6-二乙基苯胺）Versalink® MCDEA Curative (來自Air Products and Chemicals公司）。藉由將該金屬容 器置於熱板上，將混合物升溫至使混合物熔融之溫度。隨 後向1品脫容器中添加MP-22XF/Airthane® PHP-75D分散 液，從而形成樹脂基漿液。在Awatori-Rentaro AR-500 Thinky混合機（來自Thinky公司，Tokyo，Japan)中將所得樹 脂基漿液於1,000 rpm下混合25秒並於1，500 rpm下脫氣1分 153298.doc • 41 - 201143984 鐘。The exposed major surface of the polishing composition distribution layer applied to the polishing surface of the polishing pad is flush or under the front, during or after. These embodiments may be advantageously employed to subject the workpiece to the workpiece in an optional conditioning process that is subject to abrasive or rot. In additional exemplary embodiments, the polishing composition distribution layer can be used to provide a more uniform polishing across the surface of the substrate that is undergoing polishing substantially uniformly distributing the polishing composition. The polishing composition distribution layer can optionally include flow blocking elements (e.g., " baffles, grooves (not shown in the figures), holes, and the like) to adjust the flow rate of the polishing composition during polishing. In other exemplary embodiments, the polishing composition distribution layer can comprise a variety of different material layers to achieve a desired polishing composition flow rate at different depths from the polishing surface. In some exemplary embodiments, one or more of the polishing elements can include an open core region or cavity defined within the polishing element, although this configuration is not required. In some embodiments, the core of the polishing element can include a sensor to detect pressure, conductivity, capacitance, eddy current, and the like, as described in PCT International Publication No. WO 2006/055720. In yet another embodiment, the polishing pad can comprise a window extending through the pad in a direction perpendicular to the polishing surface, or a transparent layer and/or a transparent polishing element can be used to allow for an optical endpoint of the polishing process, such as PCT International Publications The case is described in WO 2009/140622. I53298.doc • 32· 201143984 The invention further relates to a method of using a polishing crucible in a polishing process as described above. The method comprises polishing a surface of a substrate with a polishing pad comprising a plurality of polishing elements (at least some of which are porous) The polishing surface is in contact and the polishing pad is moved relative to the substrate to abrade the surface of the substrate. In some exemplary implementations, a working fluid can be provided to the interface between the polishing pad surface and the substrate surface. Suitable working fluids are known in the art and are described, for example, in U.S. Patent Nos. 6,238,592, 61, 6,491,843 (1) and PCT International Publication No. WO 2002/33736. In some embodiments, the fabrication of the polishing pads described herein can be relatively easy and inexpensive. A brief discussion of some of the exemplary methods for making a polishing pad in accordance with the present invention is set forth below, and is not intended to be exhaustive or otherwise limiting. Thus, in another exemplary embodiment, 'the present invention provides a method of making the above polishing pad', the method comprising mixing a first polymer with a second polymer to form a fluid molding composition under application of heat, the fluid The molding composition is dispensed into a mold, and the fluid molding composition is cooled to form a polishing pad, the polishing pad comprising a first continuous polymer phase comprising a first polymer and an organic particulate filler comprising a first polymer. The polishing crucible has a first major side or surface and a second major side or surface opposite the first major side or surface. In an additional embodiment, the present invention provides a method of making the above polishing pad, the method comprising: dispersing an organic particulate filler in a curable composition comprising a polymer precursor material, 'dispensing the curable composition into a mold, Curing the curable composition in the mold to form a polymer sheet comprising a dispersed organic particulate filler having a first major side and a second major opposite the primary side of the first I53298.doc •33·201143984 a plurality of polishing elements extending outwardly from the first major side in a first direction substantially perpendicular to the first major side, wherein the polishing elements are integrally formed with the sheet and laterally coupled to limit the relative polishing elements One or more of the other polishing elements move laterally but are still movable along an axis substantially perpendicular to the polishing surface of the polishing element. In some exemplary embodiments, dispersing the organic particulate filler in the continuous polymer phase comprises melt mixing, rolling, extrusion, or a combination thereof. In certain exemplary embodiments, dispensing the fluid molding composition into the mold comprises at least one of reactive injection molding, extrusion molding, compression molding, vacuum molding, or a combination thereof. In some specific exemplary embodiments, dispensing includes continuously extruding the fluid molding composition onto the casting rolls by means of a film die, wherein the surface of the casting includes a mold. In an additional exemplary embodiment of fabricating the textured polishing pad described above, the method further includes grinding at least one of the first and second major sides to form a plurality of grooves extending into the side. In certain exemplary embodiments, the depth of the grooves is from about 1 μm to about 5,000 μm. In some particular exemplary embodiments, the polishing pad has a circular cross-section in a direction substantially perpendicular to the first and second sides, wherein the circle defines a radial direction, and further wherein the plurality of grooves are circular, Concentric and spaced apart in the radial direction. In an alternative exemplary embodiment of manufacturing a polishing pad 2 (wherein at least a portion of the plurality of polished cattle comprises an organic particulate filler dispersed in the continuous polymer phase described above, comprising a three-dimensional pattern, and the first major surface comprises a plurality a polishing element corresponding to the imprint of the three-dimensional pattern, wherein the plurality of polishing elements extend from the first main side to a first direction substantially perpendicular to the first main side to 153298.doc -34- 201143984, and Wherein the polishing elements are integrally formed with the sheet and laterally coupled to limit lateral movement of the polishing elements relative to one or more of the other polishing elements, but are still movable along an axis substantially perpendicular to the polishing surface of the polishing elements. The plurality of polishing elements can be formed from a continuous phase of a molten polymer containing dispersed organic particles, for example, by extrusion molding or compression molding. To form a polishing element using extrusion molding, a molten polymer containing dispersed organic particles can be used. The mixture is fed to a twin-screw extruder equipped with a film die and a casting roll having a predetermined pattern desired by the polishing element Alternatively, a polymer film comprising dispersed organic particles can be fabricated and compression molded in a second operation using a molding plate having a predetermined pattern desired for the polishing element. After the desired pattern of polishing elements is produced on the sheet, The sheet is fastened to the compliant support layer by thermal bonding to the thermal bonding film or by using an adhesive. Alternatively, the compliant support layer can be laminated to the polishing surface during film casting or compression molding. In a particularly advantageous embodiment of the polishing pad, the multi-cavity mold can have a backfill chamber, wherein each cavity corresponds to a polishing element. A plurality of polishing 70 pieces (which can include a porous polishing element as described herein and a non-porous polishing) 7L piece) can be formed by injection molding a suitable polymer melt into a multi-cavity mold and backfilling the backfill chamber with the same polymer melt or another polymer melt to form a support layer. The mold is cooled (4), Throwing "the component remains attached to the support layer, whereby a plurality of polishing elements are formed by the support layer as a unitary polishing 7C piece. In some embodiments, the mold may include Transferring the mold. 153298.doc -35· 201143984 In another embodiment, the integrally molded sheet of the polishing element can be scored between individual raised polishing elements to create a polished surface of the individual floating polishing elements. Separation can also be accomplished in the molding process by incorporating the raised regions into the mold between the individual raised elements. Suitable molding materials, molds, devices, and methods for forming a complete sheet of polishing elements are described in the examples below and in the pCT International Publications. In a further alternative embodiment, the invention provides a method of making the polishing pad 2' described above. The method comprises forming a first continuous polymer phase and an organic particulate filler dispersed therein. a plurality of polishing elements, and bonding the polishing elements to a first major side of the support layer having a second major side opposite the first major side to form a polishing pad. In some example embodiments, the method further Including attaching a compliant layer to the second primary side. In other exemplary embodiments, the method further includes additional polishing composition distribution layers to cover at least a portion of the first major side. In some exemplary embodiments, the method additionally includes forming a pattern with the polishing element on the first major side. In certain exemplary embodiments, forming the pattern includes injection molding the polishing element into a pattern, extrusion molding the polishing element into a pattern, compression molding the polishing element into a pattern, and arranging the polishing element in a pattern corresponding to the pattern The pattern is placed in the template or on the support layer. In some specific exemplary embodiments, bonding the polishing element to the support layer includes thermal bonding, ultrasonic bonding, actinic radiation bonding, adhesive bonding, and combinations thereof. In some presently preferred embodiments, the polishing element is thermally bonded to the support 153298.doc • 36· 201143984 layer. The softening, melting or flowing of the polishing element and the support layer can be softened, melted or flowed by, for example, bringing the major surface of the support layer into contact with the surface of each polishing element to form a bonding interface and heating the polishing element and the support layer. The temperature is achieved by forming a joint at the interface to achieve thermal bonding. Ultrasonic welding can also be used to thermally bond the polishing element to the support layer. In some presently preferred embodiments, pressure is applied to the joint interface while the polishing element and support layer are being heated. In other presently preferred embodiments, the support layer is heated to a temperature greater than the temperature to which the polishing element is applied. In other exemplary embodiments, joining the polishing element to the support layer involves the use of a bonding material that forms a physical and/or chemical bond at the interface between the polishing element and the major surface of the support layer. In some embodiments, this physical and/or chemical bond can be formed using an adhesive positioned at the joint interface between each polishing element and the major surface of the support layer. In other embodiments, the bonding material can be cured (eg, by thermal curing, radiation curing (eg, using curing of actinic radiation such as ultraviolet light, visible light, infrared light, electron beams, or other sources of radiation) and A similar way) to form the joined material. Suitable bonding film materials, devices and methods are described in PCT International Publication No. WO 2010/009420. In an additional currently preferred exemplary embodiment, at least a portion of the polishing element comprises a porous polishing element. In some exemplary embodiments, at least some of the polishing elements comprise a pervious, non-porous polishing element. In some specific exemplary embodiments, the porous polishing element is formed by injection molding a gas-saturated polymer melt, and injection molding to evolve a gas during the reaction to form a reaction of 153298.doc • 37· 201143984 polymer a mixture, injection molding comprising a mixture of polymers dissolved in a supercritical gas, a mixture of injection-molded polymers incompatible with a solvent, injection molding of porous thermosetting particles dispersed in a thermoplastic polymer, Injection molding includes a mixture of microspheres and combinations thereof. In additional exemplary embodiments, the pores are formed by reaction injection molding, gas dispersion foaming, and combinations thereof. In some exemplary embodiments, the porous polishing element has apertures that are substantially distributed throughout the polishing element. In other embodiments, the holes may be distributed substantially at the polishing surface of the porous polishing element. In some additional embodiments, the porosity imparted to the polishing surface of the porous polishing element can be, for example, by injection molding, calendering, mechanical drilling, laser drilling, needle perforation, gas dispersion foaming, chemical treatment, and The combination is given. It should be understood that the polishing pad need not include only substantially identical polishing elements. Thus, for example, any combination or arrangement of porous polishing elements and non-porous polishing elements can constitute a plurality of porous polishing elements. It will also be appreciated that in certain embodiments, any number of porous polishing elements and substantially non-porous polishing elements, any combination or arrangement thereof, may be advantageously employed to form a polishing crucible having a floating polishing element bonded to a support layer. . In other example embodiments, the polishing elements can be configured to form a pattern. Any pattern can be advantageously employed. For example, the polishing elements can be configured to form a two dimensional array', e.g., a rectangular, triangular or circular polished 70 piece array. In additional exemplary embodiments, the polishing element can comprise both a porous polishing element and a substantially non-porous polishing element configured in a pattern on the support layer. In certain exemplary embodiments, the porous polishing element can advantageously be phased 153298.doc • 38· 201143984 for any substantially non-porous polishing element configuration to form a porous polishing element and a non-porous polishing element on the major surface of the support layer One configuration. The number and configuration of the porous polishing elements relative to the substantially non-porous polishing elements can be advantageously selected in such embodiments to achieve the desired polishing performance. For example, in some exemplary embodiments, the porous polishing element can be substantially near the central configuration of the major surface of the polishing pad, and the substantially non-porous polishing can be substantially close to the peripheral edge configuration of the major surface of the polishing pad. Such exemplary embodiments may desirably maintain a working fluid (e.g., an abrasive polishing slurry) more effectively in the contact area between the polishing pad and the wafer surface, thereby improving the polishing uniformity of the wafer surface (e.g., A reduction in the surface of the wafer and a reduction in the amount of waste slurry produced by the CMP process. These exemplary embodiments are also desirably provided with more aggressive polishing at the edge of the grain, thereby reducing or eliminating the formation of edge ridges and improving yield and grain polishing uniformity. In other embodiments, the porous polishing element can be disposed substantially adjacent the edge of the major surface of the polishing pad, and the substantially non-porous polishing element can be substantially centrally disposed adjacent the major surface of the polishing pad. Other configurations and/or patterns of polishing elements are contemplated as long as they are within the scope of the present invention. In some embodiments of fabricating the polishing pad 2 described above, the polishing element can be configured in a pattern by the major surface of the sizing layer. In other exemplary embodiments, the polishing element can be configured in a pattern using a template of a desired pattern, and the support layer can be positioned above or below the polishing element and the template prior to bonding, wherein the major surface of the support layer is at the bonding interface Contacting each polishing element 0 153298.doc • 39- 201143984 An exemplary embodiment of a polishing crucible having a polishing element in accordance with the present invention can have various features and characteristics that enable it to be used in a variety of polishing applications. In some presently preferred embodiments, the polishing pad of the present invention is particularly suitable for use in the fabrication of integrated circuits and chemical mechanical planarization (CMP) of wafers in semiconductor devices. In certain exemplary embodiments, the polishing apparatus described in the present disclosure can provide advantages over polishing pads known in the art. For example, in some example implementations, a polishing pad in accordance with the present invention can be used to better maintain the working fluid used in the CMP process at the interface between the polishing surface of the crucible and the surface of the substrate being polished. Thereby improving the efficiency of the working liquid in enhancing polishing. In other exemplary embodiments, the polishing pad according to the present invention can reduce or eliminate dishing and/or edge corrosion of the wafer surface during polishing. In some exemplary embodiments, the use of a polishing pad in accordance with the present invention in a CMP process results in improved in-wafer polishing uniformity, a flatter polished wafer surface, and an increase in grain yield from the edge of the wafer. And improved CMP process operation scope and consistency. In other exemplary embodiments, the use of a polishing pad having a porous member in accordance with an exemplary embodiment of the present invention may permit processing of larger diameter wafers while maintaining the desired degree of surface uniformity to achieve high wafer yields, where adjustment pads are required The surface is processed to maintain more wafers or to reduce processing time and pad conditioner wear to maintain polishing uniformity of the wafer surface. Another advantage of using dispersed organic particles in a continuous polymer phase in forming a textured polishing pad is that it is significantly easier to mechanically treat or grind the surface. Commercially available CMP pads typically consist of a cross-linked polyurethane plastisol which is resistant to abrasion and which is extremely difficult to grind without tearing or damaging the foam 153298.doc 201143984. The solid thermoplastic textured polishing pad materials described herein are less deformed during the grinding operation, thus making it easier to grind and create a clean surface. An exemplary polishing pad in accordance with the present invention will now be illustrated with reference to the following non-limiting examples. EXAMPLES The following non-limiting examples illustrate various methods for making porous and non-porous polishing elements that can be used to prepare polishing pads that include a plurality of polishing elements bonded to a support layer. Example 1 The fabrication of a polishing pad 2 according to an exemplary embodiment of the present invention was completed using the following procedure. In a container, 14.9 g of micronized synthetic wax MP-22XF (from Micro Powders, Tarrytown, NY) and 92.5 g of TDI-aggregation prepolymer Airthane® PHP-75D (from Air Products and Chemicals, Allentown, PA) Mixing to form a dispersion. In a 1 pint metal container, combine 12.0 g of oligomer diamine polyoxytetradecyl-di-p-aminobenzoate VERSALINKP-650® OLIGOMERIC DIAMINE (from Air Products and Chemicals) with 50.0 g 4,4'-arylene-bis(3-aero-2,6-diethylaniline) Versalink® MCDEA Curative (from Air Products and Chemicals). The mixture is warmed to a temperature at which the mixture is melted by placing the metal container on a hot plate. The MP-22XF/Airthane® PHP-75D dispersion was then added to the 1 pint container to form a resin based slurry. The resulting resin-based slurry was mixed at 1,000 rpm for 25 seconds in an Awatori-Rentaro AR-500 Thinky mixer (from Thinky, Tokyo, Japan) and degassed at 1,500 rpm for 1 minute 153298.doc • 41 - 201143984 bell.
使用寬度為約21英吋（53.3 cm)之刮刀式塗佈機將漿液塗 佈於12英吋（30.5 cm)寬、51微米厚之PET膜襯墊與19英吋 (48 cm)寬之釋放概塾 3Mtm Secondary Liner 4935(來自 3M 公司’ St. Paul，MN)之間，並於環境溫度下b階段固化ι〇分 鐘。使具有釋放特性之釋放襯墊側與漿液接觸。樹脂基漿 液塗層之厚度係約1，〇 1 6 μη!。快速移除釋放襯塾，從而曝 露部分固化樹脂之表面。 將約12英吋X 18英吋（30.5 cm><45.7 cm)及約0.0625英对 (1.6 mm)厚、具有圆形孔之六邊形陣列（每一孔之直徑為約 6.2 mm且中心至中心距離為約8 mm)的Teflon®塗佈之金屬 絲網置於b階段固化樹脂之頂部上。將pet襯墊、b階段固 化樹脂及金屬絲網置於12英吋X 18英吋（30.5 cmx45.7 cm) 乘以0.125英吋（3.2 mm)厚之鋁板上。將12英吋χ 18英吋 (30.5 cmx45.7 cm)乘以 0.0625 英吋（1.6 mm)厚之 Teflon® 薄 片置於絲網頂部上。隨後使整個堆疊穿過雙輥式層壓機， 其具有加載至0.23 kg/cm(質量/膜寬度之線性英吋）及0.6 m/sec之速度的橡膠輥。 將該堆疊置於穿過設定於125°C下之爐的空氣流中。將 樹脂在爐中固化2小時。關閉爐之電力並使樹脂在爐中冷 卻過夜。在自爐移出後，自固化樹脂移出金屬絲網，從而 形成黏附至初始PET襯墊之紋理化墊表面。使用127 μπι厚 之轉移黏著劑 3Μ Adhesive Transfer Tape 9672(來自 3Μ公 司）’將結構化塾表面之PET襯墊用手層壓至12英吋χ 12英 153298.doc •42· 201143984 叫'(30.5 cmx30_5 cm)乘以0.0625 (1.59 mm)厚之聚胺基甲酸 酯發泡體Rogers Poron胺基甲酸酯發泡體（零件號4701-50-20062-04)(來自 American Flexible Products 公司 Chaska， MN)之薄片。自所得層壓板沖模切割9英吋（23 cm)直徑之 墊，從而形成本發明之實例性拋光墊2。 實例2 使用以下程序完成本發明之另一實例性拋光墊2的製 作。在容器中混合67.25 g 45-75 μιη球形聚乙烯珠粒（來自 Cospheric，LLC，Santa Barbara，CA)與 185.00 g TDI-聚醚預 聚物 Airthane® PHP-75D(來自 Air Products and Chemicals 公司），從而形成均質分散液。在1品脫金屬容器中，合併 24.0 g寡聚物二胺聚氧四亞曱基-二-對-胺基苯曱酸酯 VERSALINKP-650® OLIGOMERIC DIAMINE(來自 Air Products and Chemicals公司）與 60.0 g 4,4’-亞甲基-雙（3-氣-2,6-二乙基苯胺）Versalink® MCDEA Curative(來自 Air Products and Chemicals公司）。藉由將該金屬容器置於熱 板上，將混合物升溫至使混合物熔融之溫度。隨後向1品 脫容器中添加聚乙烯珠粒/Airthane® PHP-75D分散液，從 而形成樹脂基漿液。在Awatori-Rentaro AR-5 00 Thinky混 合機（來自Thinky公司）中將所得樹脂基漿液於1，000 rpm下 混合1分鐘並於2,000下脫氣30秒。 使用寬度為約21英吋（53 cm)之刮刀式塗佈機，在26 μηι 厚的支撐層上製備1，448 μιη厚、21英吋（53 cm)寬之漿液塗 層，該支撐層係藉由於1 82°C下將熱塑性聚胺基甲酸酯 153298.doc -43- 201143984 (TPU) ESTANE 58887-ΝΑΤ02(可自 Lubrizol Advanced Materials公司，Cleveland，OH購得）擠出成膜形式至紙釋 放襯墊上而形成。將經塗佈漿液及支撐層置於24英吋χ 24 英吋（61 Cmx61 cm)乘以0.25英吋（6.35 mm)厚之鋁板上。 將直徑為0.5英吋（1.25 cm)乘以3/16英吋（0.48 cm)厚之36個 磁鐵配合至鋁板背面甲之凹槽中。該等磁鐵均勻分佈成正 方形陣列。 將如實例1中所述之Teflon®塗佈之金屬絲網置於樹脂頂 部上且將整個堆疊置於穿過設定於125。〇下之爐中的空氣 流中。將該樹脂在爐中固化2小時。在自爐移出後，自固 化樹脂移出金屬絲網，從而形成黏附至初始紙背襯之聚胺 基甲酸酯支撐層的紋理化墊表面。移出紙，從而曝露聚胺 基曱酸酯支樓層之相對側。 使用 127 μπι厚之轉移黏著劑 3M Adhesive Transfer Tape 9672(來自3M公司），將紋理化墊表面之聚胺基曱酸酯支標 層用手層壓至24英忖χ 24英叶（61 cmx 61 cm)乘以0.0625 (1.59 mm)厚之聚胺基曱酸酯發泡體R0gers ρΟΓ〇η胺基甲酸 酯發泡體（零件號 4701-50-20062-04)(來自 American FlexibleThe slurry was applied to a 12 inch (30.5 cm) wide, 51 micron thick PET film liner and a 19 inch (48 cm) wide release using a knife coater having a width of about 21 inches (53.3 cm). Overview 3Mtm Secondary Liner 4935 (from 3M Company's St. Paul, MN) and cured in the b-stage at ambient temperature for 10 minutes. The release liner side with release characteristics is brought into contact with the slurry. The thickness of the resin-based slurry coating is about 1, 〇 16 μη! The release liner is quickly removed to expose the surface of the partially cured resin. A hexagonal array of approximately 12 inches x 18 inches (30.5 cm >< 45.7 cm) and approximately 0.0625 inches (1.6 mm) thick with circular holes (each hole having a diameter of approximately 6.2 mm and centered A Teflon® coated wire mesh with a center-to-center distance of about 8 mm is placed on top of the b-stage cured resin. The pet liner, b-stage curing resin and wire mesh were placed on a 12 inch x 18 inch (30.5 cm x 45.7 cm) multiplied by a 0.125 inch (3.2 mm) thick aluminum plate. Multiply 12 inches by 18 inches (30.5 cm x 45.7 cm) by 0.0625 inch (1.6 mm) thick Teflon® sheet on top of the wire. The entire stack was then passed through a two roll laminator with a rubber roll loaded to a speed of 0.23 kg/cm (linearity of mass/film width) and a speed of 0.6 m/sec. The stack was placed in a stream of air through a furnace set at 125 °C. The resin was cured in an oven for 2 hours. The furnace was turned off and the resin was allowed to cool in the oven overnight. After removal from the furnace, the self-curing resin is removed from the wire mesh to form a textured pad surface that adheres to the original PET liner. Using a 127 μm thick transfer adhesive 3Μ Adhesive Transfer Tape 9672 (from 3Μ)'s PET liner of structured enamel surface was hand laminated to 12 inches 12 inches 153298.doc • 42· 201143984 called '(30.5 Cmx30_5 cm) Multiplied by 0.0625 (1.59 mm) thick polyurethane foam Rogers Poron urethane foam (part number 4701-50-20062-04) (from American Flexible Products Chaska, Sheet of MN). A 9 inch (23 cm) diameter pad was cut from the resulting laminate to form an exemplary polishing pad 2 of the present invention. Example 2 The fabrication of another exemplary polishing pad 2 of the present invention was accomplished using the following procedure. Mix 67.25 g of 45-75 μηη spherical polyethylene beads (from Cospheric, LLC, Santa Barbara, CA) with 185.00 g TDI-polyether prepolymer Airthane® PHP-75D (from Air Products and Chemicals), Thereby a homogeneous dispersion is formed. In a 1 pint metal container, 24.0 g of oligomer diamine polyoxytetradecyl-di-p-aminobenzoate VERSALINKP-650® OLIGOMERIC DIAMINE (from Air Products and Chemicals) and 60.0 g were combined. 4,4'-methylene-bis(3- gas-2,6-diethylaniline) Versalink® MCDEA Curative (from Air Products and Chemicals). The mixture was warmed to a temperature at which the mixture was melted by placing the metal container on a hot plate. A polyethylene bead/Airthane® PHP-75D dispersion was then added to the 1 pint container to form a resin based slurry. The resulting resin-based slurry was mixed at 1,000 rpm for 1 minute and degassed at 2,000 for 30 seconds in an Awatori-Rentaro AR-5 00 Thinky mixer (from Thinky Corporation). A 1,448 μm thick, 21 inch (53 cm) wide slurry coating was prepared on a 26 μηι thick support layer using a blade coater having a width of about 21 inches (53 cm). By extrusion of thermoplastic polyurethane 153298.doc -43- 201143984 (TPU) ESTANE 58887-ΝΑΤ02 (available from Lubrizol Advanced Materials, Cleveland, OH) into a film form to paper at 1 82 °C Formed by releasing the liner. The coated slurry and support layer were placed on a 24 inch 24 inch (61 Cmx 61 cm) by 0.25 inch (6.35 mm) thick aluminum plate. A 36-diameter (1.25 cm) diameter multiplied by 3/16 inch (0.48 cm) thick magnet is fitted into the groove in the back of the aluminum plate. The magnets are evenly distributed into a square array. A Teflon® coated wire mesh as described in Example 1 was placed on top of the resin and the entire stack was placed through a setting of 125. The air in the furnace is under the air. The resin was cured in an oven for 2 hours. After removal from the furnace, the self-curing resin is removed from the wire mesh to form a textured pad surface that adheres to the polyurethane support layer of the initial paper backing. The paper is removed to expose the opposite side of the polyamine phthalate support floor. Using a 127 μπ thick transfer adhesive 3M Adhesive Transfer Tape 9672 (from 3M Company), the polyamino phthalate support layer on the surface of the textured pad was hand laminated to 24 inches 24 inches (61 cm x 61) Cm) Multiplied by 0.0625 (1.59 mm) thick polyamine phthalate foam R0gers ρΟΓ〇η urethane foam (part number 4701-50-20062-04) (from American Flexible)
Products公司）之薄片。自層壓板沖模切割20英吋（51 cm)直 徑之墊，從而形成本發明之墊。 以上實例1至2係針對產生拋光墊，該拋光墊包含具有第 —主側及與該第一主側相對之第二主側的薄片、及自第一 主側沿實質上垂直於該第一主側之第一方向向外延伸的複 數個拋光元件，其中該等拋光元件之至少一部分與薄片整 153298.doc -44 - 201143984 體形成且彳買向連接以便限制該等拋光元件相對於其他拋光 元件中之一或多者橫向移動，但沿實質上垂直於拋光元件 之抛光表面之轴仍可移動’其中複數個拋光元件中之至少 一部分包括存於連續聚合物相中之有機顆粒填料。 然而，應瞭解，實例1至2之以上模製或輥壓印膜中之任 一者可用於產生拋光元件4以用於產生拋光墊2，，該拋光墊 包含具有第一主側及與該第一主側相對之第二主側的支撐 層、及接合至該支撐層之第一主側的多個拋光元件，其中 每一拋光元件具有經曝露拋光表面，且其中該等拋光元件 自支撐層之第一主側沿實質上垂直於該第一主側之第一方 向延伸，另外其中該複數個抛光元件之至少一部分包括第 一連續聚合物相及有機顆粒填料。舉例而言，可將模製或 壓印拋光元件自膜切出來（例如’使用沖模切割）且隨後較 佳使用上述直接熱接合而接合至支樓層之第一主側。 應進一步瞭解，可改變實例性拋光墊及方法令元件之相 對次序及配置，而不背離本發明之範疇。因而，舉例而 言，可將支撐層置於暫時釋放層上並覆蓋具有拋光元件之 期望圖案之模板，之後將該等拋光元件在模板中配置成二 維陣列圖案，並將該等拋光元件熱接合至覆蓋支撐層（即 熱接合膜），例如，如PCT國際公開案第W〇 2〇1〇/〇〇942〇 號中所述。 亦應瞭解，可改變上述實例性拋光墊及方法中元件之相 對次序及配置，而不背離本發明之範疇。額外應瞭解，本 發明實例性實施例之拋光墊無需僅包括實質上相同之拋光 153298.doc • 45- 201143984 元件。因而，舉例而言，多孔拋光元件及無孔拋光元件之 任一組合或配置可構成複數個多孔拋光元件。亦應瞭解， 在某些實施例令’可有利地使用任一數目之多孔拋光元件 及實質上無孔拋光元件及其任一組合或配置以形成具有接 合至支樓層之浮動拋光元件之抛光墊。此外，可以任一數 目、配置或組合用多孔拋光元件來替代無孔拋光元件。因 而，使用上文實施方式及實例中所提供之教示内容，可將 個別多孔且視情況無孔拋光元件附加至支撐層（或與其形 成整體）以提供根據本發明之各種額外實施例的拋光墊。 最後’應瞭解’本文所揭示之拋光墊通常可包含以任一 組合之本文所揭示可選元件，例如，附加至第二主側之可 選順應層與可選黏著層、與第二主側相對地附加至順應層 之可選壓敏黏著層、可選導向板（針對拋光墊實施例，如 2 )、可選拋光組合物分佈層及類似物。 在本說明書之通篇令，無論在術語「實施例」之前是否 包含術語「實例性」’在提及「一個實施例」、「某些實 施例」、「一或多個實施例」或「實施例」時皆意指在本 發明之某些實例性實施例之至少一個實施例中包含結合該 實施例描述之特定特徵、結構、材料或特性。因而，在本 說明書,通篇的各種地方中出現諸如「在一或多個實施例 二亡、「在某些實施例中」、「在一個實施例中」或「在 貫把例中」未必係指本發明之某些實例性實施例之相同實 加例此外，在一或多個實施例中’該等特定特徵、έ士 構、材料或龍可妹-適合之方式組^ ° I53298.doc -46· 201143984 儘管本說明書已詳細描述了某些實例性實施例，但應瞭 解’彼等熟習此技術者在獲得對前文之理解時可容易想到 對此等實施例之變更、變化及等效形式。因此，應瞭解， 本揭示内容並非將不適當地限於上文所闊明之說明性實施 例〃體而。’如本文中所使用，由端點列舉之數值範圍 係意欲包含歸屬於彼範圍内之所有數字(例如，⑴包括 含1、1·5、2、2.75、3、3.80 ' 4及5)。另外，假定本文中 所使用之所有數字皆將由術語「約」>以修#。此外，本 文中所參照之所有出版物及專利之全文皆以引用方式併 入’其引用程度如同具體且個別地指示每一個別出版物或 專利以便以引用方式併入。 已描述了各種實例性實施例。此等及其他實施例皆在以 下申請專利範圍之範脅内。 【圖式簡單說明】 圖1係根據本發明一個實例性實施例之拋光墊之剖面側 視圖，該拋光墊包含整體形成之拋光元件之薄片。 圖2係根據本發明之另一實例性實施例之拋光墊的剖面 側視圖，該拋光墊包含接合至支撐層之複數個拋光元件。 圖3 Α係根據本發明之實例性實施例之拋光墊的透視圖， 該拋光墊具有配置成圖案之拋光元件。 圖3B係根據本發明之另一實例性實施例之拋光墊的俯視 圖’該拋光墊具有配置成圖案之拋光元件。 在該等圖式中’相同參考編號指示相同元件。在本文 中’該等圖式並未按比例繪製，且在該等圖式中，拋光墊 I53298.doc •47· 201143984 之組份經定大小以強調選定特徵。 【主要元件符號說明】 2 拋光墊 2' 拋光墊 4 拋光元件 4' 拋光元件 6 開孔 8, 8' 拋光組合物分佈層 10 支撐層 12 黏著層 13 第一連續聚合物相 13' 薄片 14 抛光表面 15 第二不連續聚合物 16 順應層 17 凸緣 18 壓敏黏著層 28 導向板 32 第一主側 33 第二主側 34 第一主側 35 第二主側 153298.doc -48-Sheet of Products). A 20 inch (51 cm) diameter pad was cut from a laminate die to form a pad of the present invention. The above examples 1 to 2 are directed to producing a polishing pad comprising a sheet having a first major side and a second major side opposite the first major side, and substantially perpendicular to the first from the first major side a plurality of polishing elements extending outwardly in a first direction of the major side, wherein at least a portion of the polishing elements are formed with a sheet of 153298.doc -44 - 201143984 and are snapped to limit the polishing elements relative to other polishing One or more of the elements move laterally but are still movable along an axis substantially perpendicular to the polishing surface of the polishing element 'where at least a portion of the plurality of polishing elements comprises organic particulate fillers present in the continuous polymer phase. However, it should be understood that any of the above molding or roll embossing films of Examples 1 through 2 can be used to create polishing element 4 for producing polishing pad 2, the polishing pad comprising having a first major side and a first primary side opposite the second primary side support layer, and a plurality of polishing elements bonded to the first major side of the support layer, wherein each polishing element has an exposed polishing surface, and wherein the polishing elements are self-supporting A first major side of the layer extends along a first direction substantially perpendicular to the first major side, and wherein at least a portion of the plurality of polishing elements comprises a first continuous polymer phase and an organic particulate filler. For example, the molded or embossed polishing element can be cut from the film (e.g., using a die cut) and then joined to the first major side of the support floor using the direct thermal bond described above. It will be further appreciated that the relative order and configuration of the exemplary polishing pads and methods can be varied without departing from the scope of the invention. Thus, for example, the support layer can be placed on the temporary release layer and covered with a template having the desired pattern of polishing elements, after which the polishing elements are arranged in a two-dimensional array pattern in the template and the polishing elements are hot Bonding to a cover support layer (i.e., a thermal bond film) is described, for example, in PCT International Publication No. W〇2〇1〇/〇〇942. It will also be appreciated that the relative order and configuration of the elements of the above-described exemplary polishing pads and methods can be varied without departing from the scope of the invention. It should be additionally appreciated that the polishing pad of an exemplary embodiment of the present invention need not include only substantially the same polishing 153298.doc • 45- 201143984 components. Thus, for example, any combination or arrangement of porous polishing elements and non-porous polishing elements can constitute a plurality of porous polishing elements. It should also be appreciated that in certain embodiments, any number of porous polishing elements and substantially non-porous polishing elements, any combination or arrangement thereof, may be advantageously employed to form a polishing pad having a floating polishing element bonded to a support floor. . In addition, the non-porous polishing element can be replaced with a porous polishing element in any number, configuration or combination. Thus, using the teachings provided in the above embodiments and examples, individual porous and optionally non-porous polishing elements can be attached to (or integral with) the support layer to provide polishing pads in accordance with various additional embodiments of the present invention. . Finally, it should be understood that the polishing pads disclosed herein may generally comprise optional elements disclosed herein in any combination, for example, an optional compliant layer attached to the second major side and an optional adhesive layer, and a second primary side. An optional pressure sensitive adhesive layer, an optional guide plate (for polishing pad embodiments, such as 2), an optional polishing composition distribution layer, and the like, are relatively attached to the compliant layer. Throughout the specification, whether or not the term "example" is used before the term "embodiment" is used to refer to "one embodiment", "some embodiments", "one or more embodiments" or " The embodiment is intended to include a particular feature, structure, material or characteristic described in connection with the embodiment, in at least one embodiment of certain exemplary embodiments of the invention. Thus, in various places throughout the specification, such as "in one or more embodiments, "in some embodiments", "in one embodiment" or "in the case of" Refers to the same embodiment of certain exemplary embodiments of the present invention. Further, in one or more embodiments, 'the particular features, gentleman's structure, material, or dragon-sister-suitable mode group ^ ° I53298. Doc -46· 201143984 Although certain exemplary embodiments have been described in detail in the specification, it should be understood that those skilled in the art can readily appreciate changes, variations, etc. of the embodiments. Effective form. Therefore, it should be understood that the disclosure is not to be construed as being limited to the illustrative illustrative embodiments. As used herein, the range of values recited by the endpoints is intended to include all numbers that are within the scope (e.g., (1) includes 1, 1, 5, 2, 2.75, 3, 3.80 '4 and 5). In addition, it is assumed that all numbers used herein will be referred to by the term "about" > In addition, all publications and patents referred to herein are hereby incorporated by reference in their entirety to the extent of the extent Various example embodiments have been described. These and other embodiments are within the scope of the following claims. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a cross-sectional side elevational view of a polishing pad comprising a sheet of integrally formed polishing elements in accordance with an exemplary embodiment of the present invention. 2 is a cross-sectional side view of a polishing pad including a plurality of polishing elements bonded to a support layer in accordance with another exemplary embodiment of the present invention. 3 is a perspective view of a polishing pad having a polishing element configured in a pattern in accordance with an exemplary embodiment of the present invention. Figure 3B is a top plan view of a polishing pad in accordance with another exemplary embodiment of the present invention. The polishing pad has polishing elements arranged in a pattern. In the drawings, the same reference numerals indicate the same elements. In the present text, the drawings are not drawn to scale, and in the drawings, the components of the polishing pad I53298.doc •47· 201143984 are sized to emphasize selected features. [Main component symbol description] 2 polishing pad 2' polishing pad 4 polishing element 4' polishing element 6 opening 8, 8' polishing composition distribution layer 10 support layer 12 adhesive layer 13 first continuous polymer phase 13' sheet 14 polishing Surface 15 Second discontinuous polymer 16 compliant layer 17 Flange 18 Pressure sensitive adhesive layer 28 Guide plate 32 First main side 33 Second main side 34 First main side 35 Second main side 153298.doc -48-