201142443 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種邊緣電場切換（F F s)模式之液晶顯 示裝置(LCD)及其製造方法，尤其是指藉由減少問線和資料 線的負載以及增加習用的存儲電容Cst，而能夠有效地改善 影像的品質之邊緣電場切換模式的液晶顯示裝置及其製 方法。 〃 【先前技術】 ^ 一般來說，邊緣電場切換模式之液晶顯示裝置被提出 來改善平面切換模式(IPS)之液晶顯示裝置的低開口率和透 光：：而邊緣電場切換模式之液晶顯示裝置的相關技術已 在韓國專利申請號第1998-0009243號中被描述。 〇同時’已申請且已被核准之韓國專利註冊號第0849599 號的，緣電刀換模式之液晶顯示裝置專利案，其揭露邊 電易切換模式m顯示裝置能夠差異性地驅動與資料 線相鄰的液aa和與像素區域相鄰的液晶， 料線上，成的黑色矩陣，並防止光線茂漏。暴 是帛1目是習用邊緣電場切換模式之液晶顯示裝 下p基板之部份像素區域的平面視圖；帛2圖為第1圖 自I至I’的橫切圖;第3圖為第i圖中自，的橫切 圖〇 請參照第！至3圖’在下部基板1〇〇上，由不透明金 形成的閘線G和資料線_係以垂直交又的配置方式 201142443 I成複數個單位像素區蜮。透明公用電極_和透明像素 電極400被5又置在單位像素區域中，且被絕緣層插入 兩者之間。透明像素電極4GG設置與資料線6GG在相同- 層’舉例來說，在平板的形狀上；以及，所提供的透明公 用電極800具有藉由圖形化沈積於絕緣層700上之透明導 電層而形成的複數個狹縫，且其與透明像素電極4〇〇於一 預疋區域中重疊。 主動區圖案500中’非晶矽（a-Si)層和n型非晶矽(n+ a—Si)層依序沈積’在閘線G中的閘電極200上，源極和汲 極電極600a、600b被閘絕緣層300插入二者之間，而形成 薄膜電晶體(她fiim tmnsistG1·, TFT)T。及極f極_b電 連接至透明像素電極400以施加資料信號至單位像素。 習知的邊緣電場切換模式之液晶顯示裝置具有較小的 像素尺寸以使解析度增加。因此，接觸孔洞用來在汲極電 極60〇b與透明像素電極4〇〇、汲極電極等之間形成電連接 所佔據的區域，係相對地增加而降低了開口率，因此， ，明像素電極_和透明公用電極_間用以形成儲存 备Cst的重叠區域也隨之減少。最終，這會導致問伽 如增加像素電減少電壓維持率(VHR)，_ : 例如殘影或閃爍，減少光透光率等等。 --、 【發明内容】 晶顯示裝置及其製 電容中形成取決於 本發明揭露邊緣電場切換模式之液 造方法，其能夠在習用每一像素的儲存 201142443 其中像素尺寸的變化係 ，保持或增加總儲存電 像素尺寸變化量的辅助儲存電容， 起因於高解析度及改變所致’以及 容量以有效地提高晝質。 製造方法場切換模式之液晶顯示裝置及其 二習用每一像素的儲存電容中形成取決 變it 量的透明辅助電容電極，其中像素尺寸的 ==因於高解析度及改變所致，，及形成減低電阻的 輔助電谷電極及/或透明公用電極，如此以便改盖 =，同時’藉由在維持—電壓時快速地回復公用電厂以 有效地改善特定圖案下的綠能現象。 根據本發明之特點，提供—邊緣電場切換模式㈤s 模式）之液晶顯示裝置(LCD)，其包含：一下部基板、一上 部基板及設置於該等基板間的一液晶層， 複數個問線和資料線等相互交叉所定義的複數個單位= £域以及设置於該等閘線和資料線交叉處的複數個開關裝 置。邊緣電場切換模式之液晶顯示裝置包含：一透明像素 電極，係設置在該單位像素區域中並藉由施加一電場至該 液晶層來調整透光率；一透明公用電極，藉由插入其間之 -絕緣層而與該透明像素電極相隔開並在—狀區域重 宜’及-透明辅助電容電極，藉由插入其間之一間絕緣層 而與該透明像素電極相隔開並在—預定區域重疊。在此， 透明輔助電容電極透過一預定的接觸孔洞電連接至形成於 ο下4基板外周邊之—非顯示區域中的—共用匯流排線 上，且該共用匯流排線係連接至該透明公用電極。 201142443 在此，設置於該像素區域中且與該閘線平行之透明輔 助電容電極係彼此互相電連接。 根據本發明另一觀點，提供一邊緣電場切換模式（FFS 模式）之液晶顯示裝置（LCD)，其包含，一下部基板、一上 部基板及設置於該等基板間的一液晶層，下部基板包含由 複數個閘線和資料線相互交叉所定義的複數個單位像素區 域以及設置於該等閘線和資料線交叉處的複數個開關裝 置。邊緣電場切換模式之液晶顯示裝置包含：一預定的減 低電阻公用線，其係設置於與該等閘線相同層且與每一閘 線相隔開；一透明像素電極，其係設置在該單位像素區域 中，藉由施加一電場至該液晶層來調整透光率；一透明公 用電極，藉由插入其間之一絕緣層而與該透明像素電極相 隔開並在一預定區域重疊；一透明輔助電容電極，藉由插 入其間之一閘絕緣層而與該透明像素電極相隔開並在一預 定區域重疊，其中透明輔助電容電極係覆蓋部份之該減低 電阻公用線，以電連接至該減低電阻公用線。 在此，透明公用電極可透過在絕緣層和閘絕緣膜上形 成的預定連接孔洞電連接到透明輔助電容電極。 此外，透明公用電極可包含複數預定寬度的狹縫。 再者，透明輔助電容電極在一平面視角觀點下可具有 被包含於透明像素電極中的一區域。 再更進一步，透明像素電極可具有一板狀外形。 另外，透明像素電極可與資料線形成在相同一層。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device (LCD) of a fringe field switching (FF s) mode and a method of fabricating the same, and more particularly to reducing a line and a data line. A liquid crystal display device of a fringe electric field switching mode capable of effectively improving image quality and a method of manufacturing the same, and a conventional storage capacitor Cst. 〃 [Prior Art] ^ In general, a liquid crystal display device with a fringe electric field switching mode is proposed to improve the low aperture ratio and light transmission of a liquid crystal display device of a planar switching mode (IPS): a liquid crystal display device with a fringe electric field switching mode A related art has been described in Korean Patent Application No. 1998-0009243. 〇At the same time, the Korean Patent Registration No. 0849599, which has been applied for and approved, has a liquid crystal display device patent for the edge-electrical knife-changing mode, which discloses that the edge-to-electric switching mode m display device can differentially drive the data line phase. The adjacent liquid aa and the liquid crystal adjacent to the pixel region, the material line, form a black matrix and prevent light from leaking. The storm is a plan view of a portion of the pixel area of the liquid crystal display mounted on the p substrate in the conventional fringe field switching mode; FIG. 2 is a cross-sectional view of FIG. 1 from I to I'; and FIG. 3 is the i-th view. In the picture, please refer to the section! On the lower substrate 1 ,, the gate line G and the data line _ formed of opaque gold are arranged in a plurality of unit pixel areas in a vertically intersecting arrangement. The transparent common electrode _ and the transparent pixel electrode 400 are again placed in the unit pixel region and are interposed between the two by the insulating layer. The transparent pixel electrode 4GG is disposed in the same manner as the data line 6GG - the layer 'is, for example, in the shape of the flat plate; and the transparent common electrode 800 is provided to have a transparent conductive layer formed by patterning on the insulating layer 700 A plurality of slits are overlapped with the transparent pixel electrode 4 in a pre-turn region. The 'amorphous germanium (a-Si) layer and the n-type amorphous germanium (n+ a-Si) layer in the active region pattern 500 are sequentially deposited on the gate electrode 200 in the gate line G, and the source and drain electrodes 600a 600b is inserted between the gate insulating layer 300 to form a thin film transistor (her fiim tmnsist G1·, TFT) T. The gate electrode _b is electrically connected to the transparent pixel electrode 400 to apply a data signal to the unit pixel. The liquid crystal display device of the conventional edge electric field switching mode has a small pixel size to increase the resolution. Therefore, the contact hole is used to form an area occupied by the electrical connection between the drain electrode 60〇b and the transparent pixel electrode 4〇〇, the gate electrode, and the like, which is relatively increased to lower the aperture ratio, and therefore, the bright pixel The overlap area between the electrode _ and the transparent common electrode _ used to form the storage preparation Cst is also reduced. Eventually, this can lead to an increase in pixel power reduction voltage maintenance (VHR), _: such as afterimage or flicker, reduced light transmittance, and the like. -- [Description of the Invention] The crystal display device and its capacitance are formed according to the disclosed method of liquidating the edge electric field switching mode, which can be used in the storage of each pixel 201142443 where the change in pixel size is maintained or increased The auxiliary storage capacitor, which always stores the amount of change in the size of the electric pixel, is caused by high resolution and change, and the capacity is effective to improve the quality of the enamel. A liquid crystal display device for manufacturing a field switching mode and a storage capacitor for each pixel of each of the two conventionally used transparent auxiliary capacitor electrodes, wherein the pixel size == due to high resolution and change, and formation The auxiliary electric valley electrode and/or the transparent common electrode of the reduced resistance are so as to change the cover = while effectively returning to the utility power plant while maintaining the voltage to effectively improve the green energy phenomenon in a specific pattern. According to a feature of the present invention, a liquid crystal display device (LCD) is provided in a fringe field switching mode (5) s mode, comprising: a lower substrate, an upper substrate, and a liquid crystal layer disposed between the substrates, a plurality of question lines and A plurality of units defined by the intersection of the data lines and the like = the £ field and a plurality of switching devices disposed at the intersection of the gate lines and the data lines. The liquid crystal display device of the edge electric field switching mode comprises: a transparent pixel electrode disposed in the unit pixel region and adjusting the light transmittance by applying an electric field to the liquid crystal layer; a transparent common electrode, by being inserted therebetween - The insulating layer is spaced apart from the transparent pixel electrode and is in the region-like region and the transparent auxiliary capacitor electrode is separated from the transparent pixel electrode by interposing an insulating layer therebetween and overlaps at a predetermined region. Here, the transparent auxiliary capacitor electrode is electrically connected to a common bus bar line formed in the non-display area of the outer periphery of the lower substrate 4 through a predetermined contact hole, and the common bus bar line is connected to the transparent common electrode . 201142443 Here, the transparent auxiliary capacitor electrodes disposed in the pixel region and parallel to the gate line are electrically connected to each other. According to another aspect of the present invention, a liquid crystal display device (LCD) for providing an edge electric field switching mode (FFS mode) includes a lower substrate, an upper substrate, and a liquid crystal layer disposed between the substrates, and the lower substrate includes A plurality of unit pixel regions defined by a plurality of gate lines and data lines crossing each other and a plurality of switching devices disposed at intersections of the gate lines and the data lines. The liquid crystal display device of the edge electric field switching mode comprises: a predetermined reduced resistance common line disposed on the same layer as the gate lines and spaced apart from each of the gate lines; a transparent pixel electrode disposed in the unit pixel In the region, the light transmittance is adjusted by applying an electric field to the liquid crystal layer; a transparent common electrode is separated from the transparent pixel electrode by an insulating layer interposed therebetween and overlaps at a predetermined region; a transparent auxiliary capacitor The electrode is separated from the transparent pixel electrode by a gate insulating layer interposed therebetween and overlaps at a predetermined area, wherein the transparent auxiliary capacitor electrode covers the portion of the reduced resistance common line to electrically connect to the reduced resistance common line. Here, the transparent common electrode is electrically connected to the transparent auxiliary capacitor electrode through a predetermined connection hole formed on the insulating layer and the gate insulating film. Further, the transparent common electrode may include a plurality of slits of a predetermined width. Furthermore, the transparent auxiliary capacitor electrode may have a region included in the transparent pixel electrode from a viewpoint of a planar view. Still further, the transparent pixel electrode may have a plate shape. In addition, the transparent pixel electrode can be formed in the same layer as the data line.
根據本發明另一觀點，提供一邊緣電場切換模式（FFS 201142443 模式）之液晶顯示襄置(LCD)的製造方法，該液晶顯示裝置 包^一下部基板、-上部基板及設置於該等基板間的一 液晶層’下部基板包含由複數個閘線和資料線相互交又所 定義的複數個單位像素區域以及配置在該等問線和資料線 交又處的複數個開關裝置。其製造方法包含：形成具有一 閘電極的-閘線在一基板上；形成一透明輔助電容電極， 以在每一單位像素區域中與部分之透明像素電極重叠；形 成-閘絕緣層在該基板的整個上部基板上，以覆蓋具有^ 電極的該閘線及覆蓋該透明輔助電容電極，然後形成_ 像素電極在每-單位像素區域的閉絕緣層上；形成一 區圖案在該閘電極上部上方之部分該閘絕緣層上，以及， 利用-接觸光罩，形成一第一接觸孔洞在該下部基板外周 邊的一非顯示區域中，以暴露出該透明輔助電容電極；形 成源極電極、沒極電極和資料線在該問電極上方之部分‘ 閘絕緣層上’以組成一開關裝置，同時，透過該第二：： 孔洞，形成-共用匯流排線在該下部基板外周邊的非 區域中，以電連接至該透明輔助電容電極；形成一絕緣声 在所形成之開關裝置的結構上，及形成第二接觸孔洞在^ 下部基板外周邊的非顯示區域中；並形成一透明公搞 在該絕緣層上’以至少重叠部分之該透明像素電極，並透 過该第一接觸孔洞電連接該共用匯流排線。 从’設置於該像素區域中且與綱線平行之透明輔 助電谷電極係彼此互相電連接。 根據目本發明另—觀點，提供—邊緣電場切換模式 201142443 一(FFS模式）之液晶顯示裝置(lcd)的製造方法，該液晶顯 不裝置包含：-下部基板、一上部基板及設置於該等基板 間的-液晶層，下部基板包含由複數個間線和資料線相互 交叉所定義的複數個單位像素區域以及配置在該等問線和 貧料線交又處的複數個開關裝置。其製造方法包含：形成 具有一閘電極的一閘線在-基板上；同時，形成減低電阻 A用^ ’其係使用與糊線相同的材料以及與該閘線形成 二” Ϊ 一開線相隔開；形成-透明辅助電容電 .....母早位像素區域中覆蓋部分之減低電阻公用 二 =-開絕緣層在該基板的整個上部基板上】 主動區圖案在該間=:=助電容電極;形成-形成-透明像素電極在每—單:==緣層上;並 上，·形成源極電極、⑽和 形成一絕緣層在所形#底開關裝置， 明公用電極在該絕=上開關裝置的結構上，·和形成一透 使透極後’形成第-接觸孔洞， 第二接觸孔洞形成在:;一:二_，在絕緣層形成後， 輔助電容電極暴露出預定區域，且透：的位置，使透明 洞，透明公用電極係形成來 =第—和第二接觸孔 另外’透明辅助電容電極在一;透明輔助電容電極。 被包含於透明像素電財的乂f域一平面视角觀點下可具有 再更進—步，透明像素電極可具有—板狀外形。 201142443 另外’透明像素電極可與該資料線形成在相同層。 【實施方式】 本發明具體實施例將在參考如下附圖詳加描述。雖然 ϋ =顯示和描述相關之具體實施例，對於熟悉該項技 ;被2::各種的變化仍可在不脫離本發明的精神和範圍 依據本發明邊緣電場切換模式之液晶顯示裝置括 ；:下部基板、—上部基板，以及設置於二者之間的液晶層。 間線及資料線彼此交又地形成並定義出像 ^域。開關裝置被配置於閘線和㈣線的交又處 ==液晶層並調整光穿透程度，透明像素電極和與 透月像素電極隔開的透明公用雪托卩肖，+ ’ -預定區域内重疊Α用電極間被-絕緣層插入並在 (第一具體實施例） 第4圖為根據本發明第一具體實施例之 之下部基板之部份像素區域的平面視圖;第ί 驟的平面視ΐ顯Γ形成第4圖的各層及層疊該等層之各步 :圖:第= 份層之邊緣電i曰u 的檢切圖；第11圖為第4圖部 圖為第"圖二V^c式液f顯示裝置的平面視圖；第12 明第-具體實施 ’及第13圖為根據本發 晶晶胞的等效電路圖％切換模式液晶顯示器中一液 201142443 請參考第4至13圖，本發明第一具體實施例之下部基 板結構’由不透明金屬（例如：鉬及其等效物）形成的閘 線G和資料線600，互相交又設置於基板1〇〇上，其具有 絕緣性，形成單位像素區域。一透明公用電極8〇〇和一透 明像素電極400形成單位像素區域，一絕緣層7〇〇插入該 二者之間。透明像素電極4〇〇設置與資料線6〇〇在相同一 層，例如，在平板的形狀上；以及，所提供的透明公用電 極800具有藉由圖形化沈積於絕緣層7〇〇上之透明導電層 而形成的複數個狹縫，且其與透明像素電極4〇〇於一預定 區域中重疊。 主動區圖案500 +，非晶石夕（a-Si)層和n型非晶石夕（n+ a-Si)層依序沈積，在閘線〇申的閘電極2〇〇上，源極和汲 極電極600a、600b被閘絕緣層3〇〇插入二者之間，而形成 薄膜電減(TFT)T。沒極電極6_電連接至透明像素電極 400以施加資料信號至單位像素。 特別是’在本發明第一且妒眚 、體貫苑例中，在形成閘絕緣 層300刖，透明輔助電容電 , 性丨50與閘線G為相同一層且 S又置在下部基板1〇〇上。 透明辅助電容電極15〇在每 份的透明像素電極働重疊，^像素區域中係至少與部 被包含在透明像素電極儀的是’在平面視圖下’ 個單位像素區域中，連接透明(在此情況下，每 區域是被排除在外的）。 電各電極150的連接部 同時，提供於每一單位像 ’、&中’且平行於每一單位 201142443 像素區之閘線G的透明輔助電容電極150係彼此互相電連 接。此外，透明輔助電容電極150透過習用之形成在下部 基板外周邊之非顯示區域中的共用匯流排線CB和接觸孔 洞CH1，以與平行的閘線G電連接。 於此，共用匯流排線CB係沿著像素區域周邊且被形 成於下部基板外邊緣的非顯示區域中，並施加公用電壓信 號Vcom至透明輔助電容電極150，以形成額外的輔助電容 Cst，。 此外，公用電壓信號Vcom係從共用匯流排線CB施加 至配置於基板100上的透明公用電極800，公用電壓信號 Vcom與透明像素電極400形成於基板100上的像素電壓協 同合作以形成邊緣電場，進而驅動液晶分子。 在此同時，透明輔助電容電極15 0可由氧化銦錫 (ΠΌ)、氧化錫（το)、氧化ism辛（ιτζο)和氧化101辛（ιζο) 中之任一者來形成。 如上所述，透明輔助電容電極150和透明像素電極400 於基板100上，係由插入其間之閘絕緣層300而彼此重疊 並間隔一距離。因此，在透明像素電極400和透明公用電 極800之間會形成儲存電容Cst，以保持充電至液晶晶胞 Clc的資料電壓，以及，保持透明像素電極400和透明輔助 電容電極150間之閘絕緣層300所形成的輔助電容Cst’。 輔助電容Cst’透過連接孔洞CH直接連接至共用匯流 排線CB，以與既有的儲存電容Cst並聯，因此降低了閘線 G和資料線6 0 0的負載5並有效地增加了既有的儲存電容 201142443According to another aspect of the present invention, a method of manufacturing a liquid crystal display device (LCD) of a fringe electric field switching mode (FFS 201142443 mode) is provided, wherein the liquid crystal display device includes a lower substrate, an upper substrate, and a substrate disposed between the substrates A liquid crystal layer 'the lower substrate includes a plurality of unit pixel regions defined by a plurality of gate lines and data lines inter-crossing, and a plurality of switching devices disposed at the intersection of the line and the data line. The manufacturing method comprises: forming a gate line having a gate electrode on a substrate; forming a transparent auxiliary capacitor electrode to overlap with a portion of the transparent pixel electrode in each unit pixel region; forming a gate insulating layer on the substrate On the entire upper substrate, covering the gate line having the electrode and covering the transparent auxiliary capacitor electrode, and then forming a _ pixel electrode on the closed insulating layer per unit pixel area; forming a region pattern above the upper portion of the gate electrode And forming a first contact hole in a non-display area on the outer periphery of the lower substrate to expose the transparent auxiliary capacitor electrode; forming a source electrode, The pole electrode and the data line are on the portion of the gate electrode 'on the gate insulating layer' to form a switching device, and at the same time, through the second:: hole, forming a common bus bar line in the non-region of the outer periphery of the lower substrate Electrically connected to the transparent auxiliary capacitor electrode; forming an insulating sound on the structure of the formed switching device, and forming a second contact hole under the And forming a transparent pixel electrode on the insulating layer at least overlapping portion, and electrically connecting the common bus bar line through the first contact hole. The transparent auxiliary electric valley electrode electrodes disposed in the pixel region and parallel to the outline are electrically connected to each other. According to another aspect of the present invention, there is provided a method for manufacturing a liquid crystal display device (LCD) of a fringe electric field switching mode 201142443 (FFS mode), the liquid crystal display device comprising: a lower substrate, an upper substrate, and the like A liquid crystal layer between the substrates, the lower substrate includes a plurality of unit pixel regions defined by a plurality of inter-line and data lines crossing each other, and a plurality of switching devices disposed at the intersection of the inter-question and the lean lines. The manufacturing method comprises the steps of: forming a gate line having a gate electrode on the substrate; and simultaneously forming the reduction resistor A, using the same material as the paste line and forming a line between the gate line and the gate line. Open-formed-transparent auxiliary capacitor electric.....the lowering resistance of the covering portion in the mother early pixel area. Common == On-insulation layer on the entire upper substrate of the substrate] The active area pattern is in the middle =:=Help Capacitor electrode; forming-forming-transparent pixel electrode on each-single:==edge layer; and, forming a source electrode, (10) and forming an insulating layer in the shape of the bottom switch device, the common electrode is in the = on the structure of the upper switching device, and forming a first contact hole after forming a transparent electrode, the second contact hole is formed in: a: two, after the insulating layer is formed, the auxiliary capacitor electrode exposes a predetermined area And transparent: the transparent hole, the transparent common electrode system is formed = the first and the second contact hole, the other 'transparent auxiliary capacitor electrode is in one; the transparent auxiliary capacitor electrode is included in the transparent pixel power 乂f domain Can have a view from a plane perspective Further, the transparent pixel electrode may have a plate-like shape. 201142443 In addition, the 'transparent pixel electrode may be formed in the same layer as the data line. [Embodiment] The specific embodiment of the present invention will be described in detail with reference to the following drawings. Although the specific embodiment related to the display and the description is familiar to the technology; the various changes can be made without departing from the spirit and scope of the present invention, and the liquid crystal display device according to the edge electric field switching mode of the present invention; a lower substrate, an upper substrate, and a liquid crystal layer disposed therebetween. The intermediate lines and the data lines are formed and defined to each other, and the switching device is disposed at the intersection of the gate line and the (four) line. == liquid crystal layer and adjust the degree of light penetration, the transparent pixel electrode and the transparent common snow tray separated from the moon-transparent pixel electrode, + ' - overlap in the predetermined area, the inter-electrode is inserted by the insulating layer and 4 is a plan view of a portion of a pixel region of a lower substrate according to a first embodiment of the present invention; the planar view of the second step forms a layer of FIG. 4 and the layer is stacked Steps of the layer: Figure: the cut-off view of the edge of the layer i i; and Figure 11 is the plan view of the fourth section of the figure " Figure 2 V ^ c liquid f display device; 12 明第-实施实施的' and FIG. 13 are equivalent circuit diagrams according to the present crystal unit cell % switching mode liquid crystal display one liquid 201142443 Please refer to FIGS. 4 to 13 , the lower substrate structure of the first embodiment of the present invention 'The gate wire G and the data line 600 formed of an opaque metal (for example, molybdenum and its equivalent) are disposed on the substrate 1A, which are insulative to form a unit pixel region. A transparent common electrode 8 The transparent pixel electrode 400 forms a unit pixel region, and an insulating layer 7 is interposed therebetween. The transparent pixel electrode 4 is disposed on the same layer as the data line 6,, for example, in the shape of the flat plate. And, the transparent common electrode 800 is provided with a plurality of slits formed by patterning a transparent conductive layer deposited on the insulating layer 7〇〇, and overlapping the transparent pixel electrode 4 in a predetermined region . The active region pattern 500 +, the amorphous a-Si layer and the n-type amorphous stone (n+ a-Si) layer are deposited sequentially, on the gate electrode 2〇〇 of the gate line, the source and The gate electrodes 600a, 600b are interposed between the gate insulating layers 3a to form a thin film electrical subtraction (TFT) T. The electrodeless electrode 6_ is electrically connected to the transparent pixel electrode 400 to apply a data signal to the unit pixel. In particular, in the first embodiment of the present invention, in the case of forming the gate insulating layer 300, the transparent auxiliary capacitor is electrically, the 丨50 is the same layer as the gate line G, and S is placed on the lower substrate 1〇. 〇上. The transparent auxiliary capacitor electrode 15 is overlapped in each of the transparent pixel electrodes ,, and at least the portion of the pixel region is included in the transparent pixel electrode meter in the 'plan view' unit pixel area, and the connection is transparent (here In the case, each area is excluded). The connection portion of each of the electrodes 150 is simultaneously provided, and the transparent storage capacitor electrodes 150 provided in each unit image ', &' and parallel to the gate line G of each unit of the 201142443 pixel region are electrically connected to each other. Further, the transparent auxiliary capacitor electrode 150 is electrically connected to the parallel gate line G through a common bus bar line CB and a contact hole CH1 which are conventionally formed in the non-display area on the outer periphery of the lower substrate. Here, the common bus bar CB is formed along the periphery of the pixel region and formed in the non-display region of the outer edge of the lower substrate, and the common voltage signal Vcom is applied to the transparent auxiliary capacitor electrode 150 to form an additional auxiliary capacitor Cst. In addition, the common voltage signal Vcom is applied from the common bus bar CB to the transparent common electrode 800 disposed on the substrate 100, and the common voltage signal Vcom cooperates with the pixel voltage formed on the substrate 100 by the transparent pixel electrode 400 to form a fringe electric field. The liquid crystal molecules are driven. At the same time, the transparent auxiliary capacitor electrode 15 0 may be formed of any one of indium tin oxide (yttrium), tin oxide (το), oxidized isxin (ιτζο), and oxidized 101 辛 (ιζο). As described above, the transparent auxiliary capacitor electrode 150 and the transparent pixel electrode 400 are on the substrate 100, and are overlapped with each other by a distance from the gate insulating layer 300 interposed therebetween. Therefore, a storage capacitor Cst is formed between the transparent pixel electrode 400 and the transparent common electrode 800 to maintain the data voltage charged to the liquid crystal cell Clc, and to maintain the gate insulating layer between the transparent pixel electrode 400 and the transparent auxiliary capacitor electrode 150. 300 formed auxiliary capacitor Cst'. The auxiliary capacitor Cst' is directly connected to the common bus line CB through the connection hole CH to be connected in parallel with the existing storage capacitor Cst, thereby reducing the load 5 of the gate line G and the data line 600 and effectively increasing the existing Storage capacitor 201142443
Cst。 此外’依據像素參數和驅動負載，辅助電容&的大 小可做最佳調整和自由形成。 同時，根據本發明結構’用來驅動液晶層的電場是由 透明像素電極働和透明公用電極_來決定的，透 助電容電極150和透明像素電働之間形成的電場並不合 對液晶層產生效果。這是因為在此結射，透明像素電才: 彻為板狀外形，透明辅助電容電極15〇是在板狀外形下方 形成，以至於透_助電容電極15G絲錄 得以最小化。這意味著，透明辅助電容電極⑼的辅^ ，量功能被實施，在整個LCD其他的特性上並沒有問 題。此外’當透明輔助電容電極15G具有比透明像素電極 _之板狀外形還小的面積且被包含於透明像素電極働 内時政果會更佳（當基板係如上所描述時）。例如，透明 像素電極400具有矩形板狀，透明輔助電容電極15〇也具 有矩形結構且該矩形結構被包含於透明像素電極的矩形結 構内。 。 同時，用來代表螢幕顏色的彩色濾光片（圖未示）被 配置於上部基板’其騎應至形成於下部基板1GG上之像 素區域 黑色矩陣可被形成或不形成於資料線6〇〇上。 下文中，第4至13圖是依據本發明第一具體實施例之 邊緣電場切換模式液晶顯示裝置的製造方法所詳加描述。 用 > 第4至13圖，在本發明第一具體實施例的下部 基板中，具有閘電極200的閘線G首先在基板1〇〇上被形 12 201142443 成，及一透明輔助電容電極 形成在同一層。 】5〇與基板100上的閘線G被Cst. In addition, depending on the pixel parameters and the driving load, the size of the auxiliary capacitor & can be optimally adjusted and freely formed. Meanwhile, according to the structure of the present invention, the electric field for driving the liquid crystal layer is determined by the transparent pixel electrode 働 and the transparent common electrode _, and the electric field formed between the permeable capacitor electrode 150 and the transparent pixel electrode is not integrated with the liquid crystal layer. effect. This is because the transparent pixel is electrically formed here: the plate-like shape is formed, and the transparent auxiliary capacitor electrode 15 is formed under the plate-like shape, so that the through-capacitance electrode 15G is minimized. This means that the auxiliary function of the transparent auxiliary capacitor electrode (9) is implemented, and there is no problem in other characteristics of the entire LCD. Further, when the transparent auxiliary capacitor electrode 15G has a smaller area than the plate-like shape of the transparent pixel electrode _ and is contained in the transparent pixel electrode 働, the effect is better (when the substrate is as described above). For example, the transparent pixel electrode 400 has a rectangular plate shape, and the transparent auxiliary capacitor electrode 15A also has a rectangular structure and the rectangular structure is included in the rectangular structure of the transparent pixel electrode. . Meanwhile, a color filter (not shown) for representing the color of the screen is disposed on the upper substrate. The black matrix of the pixel region formed on the lower substrate 1GG can be formed or not formed on the data line 6〇〇. on. Hereinafter, the fourth to thirteenth drawings are detailed descriptions of the manufacturing method of the fringe electric field switching mode liquid crystal display device according to the first embodiment of the present invention. In the lower substrate of the first embodiment of the present invention, the gate line G having the gate electrode 200 is first formed on the substrate 1 by 12 201142443, and a transparent auxiliary capacitor electrode is formed. On the same floor. 】5〇 and the gate line G on the substrate 100 are
屬層:對^^有閘電極扇的閘線G，經由沈積不透明金 的案化的方式，在基板⑽上對應薄膜電晶體T 明金屬i及及’透明獅電容電極H經由沈積透 Μ每一二U案:化的方式’在基板⑽上被形成，以 疊。早I素區域中之部分的透明像素電極彻互相重 明輔=====行於開線 G的透 接著，閘絕緣層300被沈積在整個基板1〇〇的上部， 以覆蓋包含間電極的間線G和透明輔助電容電極 150’然後’㈣沈積透明導電層及對其_化的方式，於 單位像素區域中的_緣層_ i，形成具有板狀外形的 透明像素電極400。 非晶石夕(a-Si)層和n型非晶石夕(n+ a—叫層依序沈積在所 產生的該基板上，然後使其圖案化而於對應閘電極謂的 絕緣層綱上形成主動區圖案·，並在絕緣層3⑼中形成 -接觸孔洞CH1 (此處係為利用接觸光罩（未顯示）形成 之共用匯流排線CB將形成之處），以暴露出透明輔助電容 電極150。 在此之後，沈積作為源極電極和汲極電極的一金屬 層，並將其圖案化以形成包含源極電極和汲極電極刪 600b的資料線600，因此組成一薄膜電晶體τ。在此，汲 201142443 極電極600b配置來電性連接至透明像素電極400。 同時，在下部基板外周邊的非顯示區域形成共用匯流 排線CB。在此，共用匯流排線CB透過接觸孔洞CH配置 來電連接至透明輔助電容電極150。此外，共用匯流排線 CB可用與資料線600相同的材料來形成。 絕緣層700,舉例來說，可應用氮化矽材料於形成薄膜 電晶體T的基板上，然後，具狹縫形狀的透明公用電極800 被形成來與至少一部分的透明像素電極400重疊。同時， 透明公用電極800透過接觸孔洞CH2電連接共用匯流排線 CB。 其次，雖然圖未示，配向層被鋪於所形成基板的最上 部，即透明公用電極800之上，因此完成了陣列基板的製 造。 同時，彩色濾光片係選擇性地形成於上部基板上，即 在配向層之上。依據本發明第一具體實施例，上下部基板 之間插入一液晶層並互相黏合而形成邊緣電場切換模式之 液晶顯示裝置。當然，基板黏合後，偏光片被附加於基板 的外表面。 第14圖為顯示習知技術和本發明第一具體實施例之傳 輸部份和1個點的光透光率之比較模擬結果，曲線圖所示 的上部份代表配置之透明電極400、透明公用電極800和透 明輔助電容電極150結構的光透光率。 (第二具體實施例） 第15圖為根據本發明第二具體實施例之知邊緣電場切 14 201142443 換模式液晶顯示裝置 圖，第16至21 _ 基板之部份像素區域的平面視 步驟的平面視序顯示形成各層及層疊該等層之各 切圖。 32圖為第丨5圖中自D至〇，的橫 本發明第二具I# 述之第一且體眘^ &彳應用之下部基板結構相似於前 用相同於笛例應用的結構。為了方便說明，將會使 再者稱Q 邊緣電〜2圖主要朗依據本發明第—具體實施例之 切晶顯示裝置之下部基板的差異，主要 明辅助雷^為了有效地減少下側共同部分的電阻（即透 時，使在形成_0的同 成 /線G相同的材料（例如’銷）並與閘線“ =:層，而透明辅助電容電極150被形成來涵蓋部分 線_電阻公用線以便電連接至用來減低電阻的公用 :料，請參考第15至21和32圖，與間線0平行的減 -線_被配置在像素的邊緣部分（即相鄰問線 Η )且與閘線G相隔—空間，減低電阻公用線9〇〇 ”閘線G形成於相同—層，且與透明公用電極_電連接， 因此不間斷地施加公用信號至透明公用電極_。 亦即，如第11和12圖所示，如應用於第一且體實施 例之透明輔助電容電極150的連接結構，減低電阻公用線 9〇〇透過接觸孔洞CH1電連接至形成的習用共用匯流排線 CB。共用匯流排線CB係沿著像素區域的周緣而在下部基 201142443 板外周邊的非顯示區域中被形成，且透過減低電阻公用線 900施加公用電壓信號Vc〇m至透明辅助電容電極以形 成額外辅助電容Cst，。 此外，透明公用電極800透過接觸孔洞〇1^2電連接至 共用匯流排線CB，且公用電壓信號VeGm被施加至透明公 用電極800，及與形成在基板1〇〇上之透明像素電極彻 的像素電壓配合’以形成邊界電場，進而驅動液晶分子。 特另i疋在本發明的第一具體實施例中，，形成於基 板100上且與閘、線G配置於同一層的透明輔助電容電極 150係在形成閘絕緣層3〇〇前即已提供。 透明輔助電容電極150可形成來覆蓋部分的減低電阻 公用線而在沒有單獨接觸孔洞下直接電連接至減低電 阻公用線900’進而改善了整體負載。同時，藉 電壓時快速地回復公用電壓，其可有效地改善特定圖案下 的綠能現象。 透明輔助電容電極15〇與部分的透明像素電極彻形 成重疊，較佳地，於-平面視圖下，係有_區域包含在透 明像素電極400内。 下文中’請參考化至21和32圖，將詳述本發明第 -具體實施例之邊緣電場切換模式之液晶顯示裝置的製造 方法。 =參考第15至21和32圖。在本發明第二具體實施例 下縣板中，包含有閘電極扇的閘線G形成在基板湖 上，預先決定的減低電阻公用線 201142443 隔一空間’並使用與問線G相同的材料（例如，钥）以及 與閘線G形成於同~~層。 接著’透明輔助電容電極150形成於基板1〇〇上且與 閘線G相同層’亦即，透明辅助電容電極150藉由沈積透 明金屬層及其圖案化，以覆蓋部分的減低電阻公用線9⑼ 以及在每-單元像輕域巾與料之透明《電極400重 疊。 此後，閘絕緣層300被沈積在整個上部基板1〇〇,以覆 蓋包括閘電極200的閘線G和透明輔助電容電極i %，然 後非晶石夕（a-Si)層和n型#晶石夕（n+ a，層依序沈積在所形 成的基板上’然後對其圖案化以在開電極上部的部分 閘絕緣層300上形成主動區圖案5〇〇。 接下來’藉由沈積和圖案化透明導電層，板狀外形的 透明像素電極_被形成來配置在單位像素區域的問 層300上。之後，沈積作為源極電極和汲極電極的金 然後對其圖案化以形成包括源極電極和沒極電㉟叫曰 6_的詞線_，驗朗膜電晶體了，在此，汲極電 極600b配置來電連接透明像素電極4〇〇。 來’-絕緣層’舉例來說：可應錢化 膜電晶體T的基板上，然後，具狹縫形 ^電^_被形成來與至少—部分的透明像素電極_ 上^ 雖然圖未示’配向層被鋪於所形成基板的最 =/卩相公用電極_之上，因此完成了陣列基板的 201142443 此外，彩色遽光片係選擇性地形成於上部基板上 在配向層之上。依據本發明第二具體實施例，上下部基板 之間插入-液晶層並互相黏合而形成邊緣電場切換模^ 液晶，示裝置。當然，較佳地，基板黏合後，偏光片被附 加於基板的外表面。 (第三具體實施例） 第22圖為根據本發明第三具體實施例之邊緣電場切換 核式液晶顯示裝置之下部基板之部份像素區域的平面視 圖，和第33圖為第22圖中自，的橫切圖。 明參考第22至33圖’依據本發明第三具體實施例之 ^緣電場㈣模式液晶顯示裝置的下部基板，其相較於如 前所述之依據本發明第二具體實施例之下部基板，只有在 一個地方不同’即減低電阻公用線900的配置位置。根據 本發明第三具體實施例之邊緣電場切換模式液晶顯示裝置 的下部基板係相同於本發明第二具體實施例相關的結構及 其製造方法i此，其詳細說明即如同第二具體實施例。 應用於第二具體實施例令的減低電阻公用線900係配 置成與閘線G平行，且在像素的邊緣部與閘線G (當從基 板的上面來看時係為閘線的下邊部）相間隔一空間。如第 二具體實施例之所述’減低電阻公用線_與閘線g形成 於相同一層，並電連接至透明公用電極_，因此不間斷地 施加公用信號至透明公用電極8〇〇。 (第四具體實施例） 第23圖為根據本發明第四具體實施例之邊緣電場切換 201142443 模式液晶顯示步菩 圖，第24 裝置之下。卩基板之部份像素區域的平面視 4至31圖為依序顯示形成各層及層疊該等層之 ^面視圖；第34圖為第23圖中自FH，的橫切圖。 楚發明第四具體實施例應用之下部基板結構相似於前 围二具體實施例應用的結構。為了方便說明，將會使 目=，第+二具體實施例相關的元件符號和名稱。 邊緣主要說明鋪本發明第四具體實施例之 •野刀換模式液晶顯示裝置 的不同在於·· … 異’主要 ^ 、 ”、，有效地減少上下側共同部分的電阻（即 透月^和透明輔助電容電極），在閘絕緣層細和絕。 和CH2暴露出的透明輔助電透容m第二接觸孔洞㈤ 極800,二者可電性地連接在一起。0以及透明公用電 公用電場切換模式的液晶顯示裝置中，透明 八=_的電阻隨著其尺寸而增加，因此出現一個如： 透tr題。若使用本發明之第四具體實施例， ==用線_會在單位像素區域内互相電 呈上下M #此藉由使用—減低電阻公用線900進而改 用電極和透明辅助電容電極)共同部 201142443 另外，減低電阻公用線900和共用匯流排CB之間的 連接關係（請參考第n和12圖）係形成在下部基板外周 邊的-非顯示區域中’進而相同於第二和第三具體實施 例’故於此省略其詳細說明。 八 ^ 下M，請參考第23至31及34圖，將詳細描述依據 ==四具體實施例之邊緣電場切換模式之液晶顯示的 請參考第23至31及34圖，在本發明第四具體實施例 應用之下部基板中’首先在基板1〇〇上形成一包含有間電 極200的間線G，預先決定的減低電阻公^ _ __ 閘線G相間隔4間’並使用與閘線G相同的材料（例如， 鉬）以及與閘線G形成於同一層。 接著，透明輔助電容電極15〇形成於與閑線g相同一 層的基板100上’亦即’藉由沈積透明金屬層及其圖案化 形成透明輔助電容電極15〇，以覆蓋部分的減低電阻公用線 900以及在每—單㈣素區域中與部分之透明像素電極彻 重疊。 纽之後’閘絕緣層300被沈積在整個上部基板刚， 以覆盍包括閘電極200的閘線G和透明辅助電容電極 二’ S_ n型非晶石夕(n+ a，層依序沈 積在所形成的基板上，然後對其圖案化以在問電極上 部的料閘絕緣層3G〇上形成主動區圖案5〇〇。 藉由沈積和圖案化透明導電層，板狀外形的透明 電極_被形絲配置在單位像素區域的㈣緣層· 20 201142443 上，之後，第-接觸孔洞CH1被形成，以暴露出—預定區 域的透明輔助電容電極15〇。 即是，藉由蝕刻閘絕緣層3〇〇以形成第一接觸孔洞 CH1 ’進而暴露出用來連接減低電阻公用、線_之辅助電 容電極150的一預定區域。 在此之後，沈積作為源極電極和沒極電極的金屬層， 對其圖案化以形成包含源極電極和沒極電極_a和6嶋 (請見第9圖）資料線_，因此組成薄膜電晶體τ，在此， 沒極電極600b配置來電連接至透明像素電極彻。 接了來，一絕緣層700’舉例來說♦•可應用氮化矽材料 於形成薄膜電晶體T的基板上，然後，藉由㈣絕緣層 700,在第一接觸孔洞㈤的相同位置上形成第二接觸孔 洞CH2，如此，透明辅助電容電極15〇的一預定區域即合 被暴露出來。 接著，具狹縫形狀的透明公用電極8〇〇被形成來盘至 少一部分的透明像素電極400重疊。在此時，透明公用電 ° 透過第和第一接觸孔洞CH1和CH2電連接至暴露 出的透明辅助電容電極15〇。 恭路 其次’雖然圖未示，配向層被鋪於所形成基板的最上 部’即透明公用電極_之上’因此完成了陣列基板的製 造。 此外，彩色濾光片係選擇性地形成於上部基板上，即 在配向層之上。依據本發明第四具體實施例’上下部基板 1插入液阳層並互相黏合而形成邊緣電場切換模式之 201142443 液晶顯示裝置。當然 加於基板的外表面。 較佳地，基板黏合後，偏光片被附 熟習本項技術者應理解的是，依上所述本發明呈體 施例之等效變化與置換，均未脫離本發明之精神或範脅。 =唯本發明之保護範圍當以後述之巾請翻範圍所界定 者為準。 【圖式簡單說明】 装第1圖為習知邊緣電場切換模式液晶顯示裝置之下部 基板之部份像素區域的平面視圖； 第2圖為第！圖中自，的橫切圖，· 第3圖為第1圖中自，的橫切圖； ^圖為根據本發明第—具體實施例之邊緣電場切換 式^曰曰顯示之下部基板之部份像素區域的平面視圖； 5至8圖為依序顯鄉成各 驟的平面視圖； 且β寺層之各步 第9圖為第4圖中自Α至Α,的橫切圖； 第1〇圖為第4时自，的橫切圖； 第11圖為第4圖部份 裝置的平面視圖，·邊界電場切換模式液晶顯示 =12圖為第11圖中自…，的橫切圖； 模式ί3為=本發明第—具體實施例之邊緣電場切換 拉式L器中—液晶晶胞的等效電路圖； 第14圖為咐知技術⑷和本發明第-具體實施例⑻ 22 201142443 之透光部份和i個點之光透料的模擬結果圖； 第15圖為根據本發明第二具體實施狀邊緣電場切換 模式液晶顯示裝置之下部基板之部份像素區的平面視圖； 第16至21圖為依序顯示形成各層及層疊該等層之各 步驟的平面視圖； “第22®為根據本發明第三具體實施狀邊緣電場切換 模式液晶顯示裝置之下部基板之料像素區域的平面視 圖； 第23圖為根據本發明第四具體實施例之邊緣電場切換 模式液晶顯示裝置之下部基板之部份像素區域的平面視 圃， 第24至31圖為依序顯示形成各層及層疊該等層之各 步驟的平面視圖； 第32圖為第15圖中自D至D，的橫切圖； 第33圖為第22圖中自E至E，的橫切圖；及 第34圖為第23圖中自ρ至F，的橫切圖。 【主要元件符號說明】 100 基板 150 透明輔助電容電極 200 閘電極 300 閘絕緣層 400 透明像素電極 500 主動區圖案 23 201142443 600 資料線 600a 源極電極 600b 没極電極 700 絕緣層 800 透明公用電極 900 減低電阻公用線 T 薄膜電晶體 G 閘線 CB 共用匯流排線 CHI 第一接觸孔洞 CH2 第二接觸孔洞 Clc 液晶電池 Cst 存儲電容 Cst’ 輔助電容 Vcom 公用電壓信號 24The genus layer: the gate line G with the gate electrode fan, through the deposition of opaque gold, on the substrate (10) corresponding to the thin film transistor T metal and the 'transparent lion capacitor electrode H through the deposition One or two U cases: the way of 'formation' is formed on the substrate (10) to stack. The transparent pixel electrodes of the portion of the early I region are completely reciprocal with each other. =====After the opening of the open line G, the gate insulating layer 300 is deposited on the upper portion of the entire substrate 1 to cover the interlayer electrode. The inter-line G and the transparent auxiliary capacitor electrode 150' then '(4) deposit a transparent conductive layer and form a transparent pixel electrode 400 having a plate-like outer shape in a manner of forming a transparent conductive layer in the unit pixel region. An amorphous (a-Si) layer and an n-type amorphous stone (n+ a-called layer) are sequentially deposited on the generated substrate, and then patterned to be on the corresponding gate electrode Forming an active region pattern and forming a contact hole CH1 in the insulating layer 3 (9) (here, a common bus bar CB formed by a contact mask (not shown) will be formed) to expose the transparent auxiliary capacitor electrode 150. Thereafter, a metal layer as a source electrode and a drain electrode is deposited and patterned to form a data line 600 including a source electrode and a drain electrode cut 600b, thereby constituting a thin film transistor τ. Here, the 汲201142443 pole electrode 600b is configured to be electrically connected to the transparent pixel electrode 400. Meanwhile, the common bus bar line CB is formed in the non-display area on the outer periphery of the lower substrate. Here, the common bus bar line CB is configured to transmit an incoming call through the contact hole CH. It is connected to the transparent auxiliary capacitor electrode 150. Further, the common bus bar CB can be formed of the same material as the data line 600. The insulating layer 700, for example, can be applied to the base of the thin film transistor T by using a tantalum nitride material. Then, a transparent common electrode 800 having a slit shape is formed to overlap with at least a part of the transparent pixel electrode 400. Meanwhile, the transparent common electrode 800 is electrically connected to the common bus bar line CB through the contact hole CH2. Second, although not shown The alignment layer is deposited on the uppermost portion of the formed substrate, that is, on the transparent common electrode 800, thereby completing the fabrication of the array substrate. Meanwhile, the color filter is selectively formed on the upper substrate, that is, in the alignment layer. According to the first embodiment of the present invention, a liquid crystal layer is inserted between the upper and lower substrates and bonded to each other to form a liquid crystal display device having a fringe electric field switching mode. Of course, after the substrate is bonded, the polarizer is attached to the outer surface of the substrate. Figure 14 is a comparison result showing the comparison of the light transmittance of the transmission portion and the one point of the prior art and the first embodiment of the present invention. The upper portion shown in the graph represents the transparent electrode 400 disposed and transparent. The light transmittance of the structure of the common electrode 800 and the transparent auxiliary capacitor electrode 150. (Second embodiment) FIG. 15 is a second specific embodiment according to the present invention. Example of the edge electric field cut 14 201142443 Change mode liquid crystal display device diagram, 16th to 21st _ The plane of the pixel area of the substrate is shown in the plane view of the step to form each layer and the respective cut layers of the layers. For the second aspect of the invention, from the D to the 丨, the second embodiment of the invention is the first and the structure of the lower substrate is similar to that of the structure previously applied to the same. For convenience. In the description, it will be referred to as Q edge electric power. The main difference is in accordance with the difference of the lower substrate of the dicing display device according to the first embodiment of the present invention, mainly to help reduce the resistance of the common part of the lower side. (i.e., through time, the same material (e.g., 'pin) of the same/line G as _0 is formed and the gate line "=: layer, and the transparent auxiliary capacitor electrode 150 is formed to cover the partial line _ resistance common line so that Electrically connected to the common material used to reduce the resistance: please refer to Figures 15 to 21 and 32, and the minus-line _ parallel to the line 0 is arranged at the edge portion of the pixel (ie adjacent to the line Η) and with the gate Line G is separated by space, reducing the resistance common line 9〇〇” G is formed on the same line - layer and connected electrically with the transparent common electrode _, thus continuously applied to the transparent common electrode common signal _. That is, as shown in FIGS. 11 and 12, as applied to the connection structure of the transparent auxiliary capacitor electrode 150 of the first embodiment, the reduced resistance common line 9 is electrically connected to the formed common confluence through the contact hole CH1. Cable CB. The common bus bar CB is formed along the periphery of the pixel region in the non-display region of the outer periphery of the lower substrate 201142443, and the common voltage signal Vc〇m is applied to the transparent auxiliary capacitor electrode through the reduced resistance common line 900 to form an additional Auxiliary capacitor Cst,. Further, the transparent common electrode 800 is electrically connected to the common bus bar CB through the contact hole ^1, and the common voltage signal VeGm is applied to the transparent common electrode 800, and to the transparent pixel electrode formed on the substrate 1? The pixel voltage fits 'to form a boundary electric field, which in turn drives the liquid crystal molecules. In the first embodiment of the present invention, the transparent auxiliary capacitor electrode 150 formed on the substrate 100 and disposed in the same layer as the gate and the line G is provided before the gate insulating layer 3 is formed. . The transparent auxiliary capacitor electrode 150 can be formed to cover a portion of the reduced resistance common line and directly electrically connected to the reduced resistance common line 900' without a separate contact hole to thereby improve the overall load. At the same time, the utility voltage is quickly restored by the voltage, which can effectively improve the green energy phenomenon under a specific pattern. The transparent auxiliary capacitor electrode 15 is partially overlapped with a portion of the transparent pixel electrode. Preferably, in the plan view, the _ region is included in the transparent pixel electrode 400. Hereinafter, the method of manufacturing the liquid crystal display device of the edge electric field switching mode of the first embodiment of the present invention will be described in detail with reference to Figs. = Refer to Figures 15 to 21 and 32. In the lower panel of the second embodiment of the present invention, the gate line G including the gate electrode fan is formed on the substrate lake, and the predetermined reduced resistance common line 201142443 is separated by a space ' and uses the same material as the question line G (for example) , key) and the gate line G are formed in the same ~~ layer. Then, the transparent auxiliary capacitor electrode 150 is formed on the substrate 1 and is the same layer as the gate line G. That is, the transparent auxiliary capacitor electrode 150 is formed by depositing a transparent metal layer and patterning it to cover a portion of the reduced resistance common line 9 (9). And in each unit-like light-weight towel and material transparent "electrode 400 overlap. Thereafter, the gate insulating layer 300 is deposited over the entire upper substrate 1A to cover the gate line G including the gate electrode 200 and the transparent auxiliary capacitor electrode i%, and then the amorphous a-Si layer and the n-type # crystal Shi Xi (n+ a, the layer is deposited on the formed substrate in sequence) and then patterned to form an active region pattern 5 部分 on a portion of the gate insulating layer 300 on the upper portion of the open electrode. Next 'by deposition and pattern A transparent conductive layer, a plate-shaped transparent pixel electrode _ is formed to be disposed on the interrogation layer 300 of the unit pixel region. Thereafter, gold as a source electrode and a drain electrode is deposited and then patterned to form a source including The electrode and the electrodeless electrode 35 are called the word line _6_, and the film is formed. Here, the drain electrode 600b is configured to electrically connect the transparent pixel electrode 4〇〇. To the '-insulating layer', for example: The film is formed on the substrate of the film transistor T, and then, the slit shape is formed with at least a portion of the transparent pixel electrode _ on the surface. Although the figure is not shown, the alignment layer is laid on the most formed substrate. = / 卩 phase common electrode _ above, thus completing the array substrate 2 01142443 In addition, a color light-emitting sheet is selectively formed on the upper substrate on the alignment layer. According to the second embodiment of the present invention, the liquid crystal layer is interposed between the upper and lower substrates and bonded to each other to form an edge electric field switching mode. Liquid crystal, display device. Of course, preferably, after the substrate is bonded, the polarizer is attached to the outer surface of the substrate. (Third embodiment) FIG. 22 is a view of a fringe electric field switching core according to a third embodiment of the present invention. A plan view of a portion of the pixel area of the lower substrate of the liquid crystal display device, and FIG. 33 is a cross-sectional view of the second embodiment of the present invention. The lower substrate of the electric field (four) mode liquid crystal display device is different from the lower substrate according to the second embodiment of the present invention as described above, only in one place, that is, the arrangement position of the resistance common line 900 is reduced. According to the present invention The lower substrate of the liquid crystal display device of the third embodiment is the same as the structure related to the second embodiment of the present invention and the manufacturing method thereof. The detailed description thereof is like the second embodiment. The reduced resistance common line 900 applied to the second embodiment is configured to be parallel to the gate line G, and at the edge portion of the pixel and the gate line G (when from the top of the substrate) When viewed, the lower side of the gate line is spaced apart by a space. As described in the second embodiment, the 'reduced resistance common line _ is formed on the same layer as the gate line g, and is electrically connected to the transparent common electrode _, thus The common signal is continuously applied to the transparent common electrode 8A. (Fourth embodiment) FIG. 23 is a diagram showing a method of switching a fringe electric field according to a fourth embodiment of the present invention. The planes of some of the pixel regions of the substrate are shown in Fig. 4 to 31 in order to form the respective layers and the plane views of the layers. Fig. 34 is a cross-sectional view from FH in Fig. 23. The fourth embodiment of the invention is applied to a structure in which the lower substrate structure is similar to the application of the second embodiment. For convenience of explanation, the component symbols and names associated with the second embodiment will be made. The edge mainly describes the fourth embodiment of the present invention. The difference of the wild-knife-switching mode liquid crystal display device lies in the fact that the 'main ^, 、, effectively reduces the resistance of the common part of the upper and lower sides (ie, the transparent and transparent) Auxiliary capacitor electrode), the gate insulating layer is fine and absolutely. And the transparent auxiliary electric capacitance M exposed by CH2 is the second contact hole (5) pole 800, which can be electrically connected together. 0 and transparent utility electric common electric field switching In the liquid crystal display device of the mode, the resistance of the transparent eight = _ increases with the size thereof, so that a problem such as: is used. If the fourth embodiment of the present invention is used, the == line _ will be in the unit pixel area. Internally, the upper and lower sides are electrically connected to each other. M# This is used by using - reducing the resistance common line 900 and then using the electrode and the transparent auxiliary capacitor electrode. Common part 201142443 In addition, the connection relationship between the resistance common line 900 and the common bus bar CB is reduced (please refer to The nth and 12th drawings are formed in the non-display area in the outer periphery of the lower substrate, and are the same as the second and third embodiments. Therefore, the detailed description thereof is omitted here. Referring to Figures 23 to 31 and 34, the liquid crystal display according to the edge electric field switching mode of the == four specific embodiments will be described in detail. Referring to Figures 23 to 31 and 34, the lower substrate is applied in the fourth embodiment of the present invention. First, a first line G including the inter-electrode 200 is formed on the substrate 1 , and a predetermined reduction in resistance _ __ gate line G is spaced between 4 ' and uses the same material as the gate line G (for example, Molybdenum) is formed in the same layer as the gate line G. Next, the transparent auxiliary capacitor electrode 15 is formed on the substrate 100 of the same layer as the idle line g, that is, by depositing a transparent metal layer and patterning thereof to form a transparent auxiliary capacitor The electrode 15 is covered with a portion of the reduced resistance common line 900 and partially overlaps with a portion of the transparent pixel electrode in each of the -(tetra) regions. After the button, the gate insulating layer 300 is deposited on the entire upper substrate just to cover the The gate line G of the gate electrode 200 and the transparent auxiliary capacitor electrode are two 'S_n-type amorphous stones (n+a, the layers are sequentially deposited on the formed substrate, and then patterned to insulate the gate of the upper electrode Layer 3G The active area pattern is 〇〇. By depositing and patterning the transparent conductive layer, the transparent electrode of the plate shape is arranged on the (four) edge layer of the unit pixel region 20 201142443, after which the first contact hole CH1 is Formed to expose a transparent auxiliary capacitor electrode 15〇 of a predetermined region. That is, by etching the gate insulating layer 3〇〇 to form a first contact hole CH1′, thereby exposing the auxiliary for connecting the reduced resistance common, line_ A predetermined region of the capacitor electrode 150. Thereafter, a metal layer as a source electrode and a gate electrode is deposited and patterned to form a source electrode and a gate electrode _a and 6 嶋 (see Figure 9). The data line _ thus constitutes the thin film transistor τ, where the electrodeless electrode 600b is configured to be electrically connected to the transparent pixel electrode. Next, an insulating layer 700' can be applied, for example, by using a tantalum nitride material on the substrate on which the thin film transistor T is formed, and then formed by the (four) insulating layer 700 at the same position of the first contact hole (5). The second contact hole CH2, as such, a predetermined area of the transparent auxiliary capacitor electrode 15A is exposed. Next, the slit-shaped transparent common electrode 8 is formed so that at least a part of the transparent pixel electrodes 400 overlap. At this time, the transparent utility power is electrically connected to the exposed transparent auxiliary capacitor electrode 15 through the first and first contact holes CH1 and CH2. Gong Lu Secondly, although not shown, the alignment layer is laid on the uppermost portion of the formed substrate, i.e., over the transparent common electrode _, thus completing the fabrication of the array substrate. Further, a color filter is selectively formed on the upper substrate, i.e., above the alignment layer. According to a fourth embodiment of the present invention, the upper and lower substrates 1 are inserted into the liquid positive layers and bonded to each other to form a 201142443 liquid crystal display device having a fringe electric field switching mode. Of course, it is applied to the outer surface of the substrate. Preferably, after the substrate is bonded, the polarizer is well-known to those skilled in the art. It should be understood that the equivalent variations and modifications of the present invention are not departing from the spirit or scope of the invention. The scope of protection of the invention is defined only when the scope of the invention is described later. [Simple description of the drawing] Fig. 1 is a plan view showing a part of the pixel area of the lower substrate of the conventional edge electric field switching mode liquid crystal display device; Fig. 2 is the first! FIG. 3 is a cross-sectional view of FIG. 1; FIG. 3 is a cross-sectional view of the lower substrate according to the first embodiment of the present invention; The plan view of the pixel area; the 5 to 8 picture shows the plan view of each step in sequence; and the 9th picture of each step of the β temple layer is the cross-cut view from the Α to Α in the 4th picture; The cross-sectional view of the device at the 4th time; the 11th view is a plan view of a part of the device in Fig. 4, the boundary electric field switching mode liquid crystal display = 12 is a cross-sectional view from ... in Fig. 11; The mode ί3 is an equivalent circuit diagram of the liquid crystal cell in the edge electric field switching pull type L device according to the first embodiment of the present invention; FIG. 14 is a perspective view of the prior art (4) and the first embodiment (8) 22 201142443 of the present invention. FIG. 15 is a plan view showing a portion of a pixel region of a lower substrate of a liquid crystal display device according to a second embodiment of the present invention; Figure 21 is a plan view showing the steps of forming each layer and laminating the layers in sequence; "22nd is root A plan view of a pixel region of a lower substrate of a liquid crystal display device in a fringe field switching mode according to a third embodiment of the present invention; FIG. 23 is a portion of a lower substrate of a liquid crystal display device in a fringe field switching mode according to a fourth embodiment of the present invention; Figure 24 is a plan view showing the steps of forming each layer and laminating the layers in sequence; Fig. 32 is a cross-sectional view from D to D in Fig. 15; 33 is a cross-sectional view from E to E in Fig. 22; and Fig. 34 is a cross-sectional view from ρ to F in Fig. 23. [Major component symbol description] 100 substrate 150 transparent auxiliary capacitor electrode 200 Gate electrode 300 gate insulating layer 400 transparent pixel electrode 500 active region pattern 23 201142443 600 data line 600a source electrode 600b electrodeless electrode 700 insulating layer 800 transparent common electrode 900 reduced resistance common line T thin film transistor G gate line CB shared bus Line CHI first contact hole CH2 second contact hole Clc liquid crystal cell Cst storage capacitor Cst' auxiliary capacitor Vcom common voltage signal 24