TW201141980A - Adhesive composition, adhesive sheet and semiconductor device - Google Patents

Adhesive composition, adhesive sheet and semiconductor device Download PDF

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Publication number
TW201141980A
TW201141980A TW100111275A TW100111275A TW201141980A TW 201141980 A TW201141980 A TW 201141980A TW 100111275 A TW100111275 A TW 100111275A TW 100111275 A TW100111275 A TW 100111275A TW 201141980 A TW201141980 A TW 201141980A
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TW
Taiwan
Prior art keywords
resin
adhesive
film
adhesive composition
group
Prior art date
Application number
TW100111275A
Other languages
Chinese (zh)
Inventor
Takashi Masuko
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of TW201141980A publication Critical patent/TW201141980A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J179/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
    • C09J179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09J179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
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    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
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    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Die Bonding (AREA)
  • Epoxy Resins (AREA)

Abstract

An adhesive composition containing a thermoplastic resin (A) and a thermal hardening component (B) is provided. The thermoplastic resin (A), of which a weight average molecular weight is 10000 to 150000 and a viscosity of 5 poise to 300 poise at 25 DEG C when 25 mass% of the resin composition is dissolved in N-methyl-2-pyrrolidone. The thermal hardening component (B) includes a reactive plasticizer having allyl groups or epoxy groups (B1), a compound having styryl groups (B2), and a compound having maleimide groups (B3).

Description

201141980 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種接著劑組成物、接著片及半導 裝置。 【先前技術】 先前，半導體元件與支持構件的接合時主要使用銀 糊。然而，伴隨著近年來的半導體元件的大型化、半導體 封裝的小型化·高性能化，對所使用的支持構件亦要求小型 化、細密化。針對此種要求，由於因潤濕擴散性、滲出戈 半導體元件的傾斜而產生的打線接合時的不良狀況，銀糊 的厚度控制的困難性，及銀糊的孔隙產生等，故使用銀糊 的接合不足以應對上述要求。因此，為了應對上述要求' 近年來逐漸使用具有膜狀的接著劑層的接著片（例如參照 專利文獻1及專利文獻2)。 >… 該接著片是用於單片貼附方式或晶圓背面貼附方式等 的半導體裝置的製造方法。 於藉由前者的單片貼附方式來製造半導體裝置時，首 先藉由切割（cutting)或壓片（pUnching)將捲筒狀的接 著片切出成單片後，將接著劑層貼合於支持構件。其後， 將藉由切晶（dicing)步驟而單片化的半導體元件接合於 附接著劑層的支持構件。其後，經過打線接合、密封等組 裝步驟而製造半導體裝置（例如參照專利文獻3)。然而， 單片貼附方式的情況下，需要用以切出接著片並接著於支 持構件的專用的組裝裝置，因此與使用銀糊的方法相比較 3 201141980 有製造成本變高的問題。 另-方面，於藉由晶圓背面貼附方 圓的背面貼附接著劑 者刎層的另一面貼合切晶片。其後，藉 a ,人女 接著劑層的狀態下將半導體晶圓單月 ^ θ ^ 件。繼而，拾取附有接著劑層的半導體 構件。然後經過打線接合、密封等租裝^半 如單片貼附方 用的、，且裝裝置’可將先刖的銀糊用的組 或藉由對其附加熱盤等的裝置的一部分χ 2，晶圓背面貼附方式是使用接著片的組裝；法中作為將 二制得相對較廉價的方法而受到關注(例如參照 外，體元件的小型薄型化.高性能化以 卜夕功1化發展，將辣半導體元件積層 :遽：多。另外，半導體裝置向薄型化的方：， 進一步使用經極薄化的半導體晶圓。 因此 隨著半導體裴置的薄型化發展，丰導 為了抑制打線接:時的衝展’ 提高打線接合時的超音波效率，及 的接著劑層的高彈性化的要求較迄今為$疋件 另外，為了實現組裝步驟的簡化，有時藉在接201141980 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to an adhesive composition, an adhesive sheet and a semiconductor device. [Prior Art] Previously, silver paste was mainly used in the bonding of a semiconductor element and a supporting member. However, with the increase in the size of semiconductor devices in recent years and the miniaturization and high performance of semiconductor packages, it is required to reduce the size and size of the supporting members used. In response to such a request, it is difficult to control the thickness of the silver paste due to the wettability and the slanting of the semiconductor element, the difficulty in controlling the thickness of the silver paste, and the generation of the pores of the silver paste. The joint is not sufficient to meet the above requirements. Therefore, in order to cope with the above-mentioned requirements, a laminate having a film-form adhesive layer has been gradually used in recent years (see, for example, Patent Document 1 and Patent Document 2). > The adhesive sheet is a method of manufacturing a semiconductor device for use in a single-chip attaching method or a wafer back-side attaching method. When the semiconductor device is manufactured by the monolithic attachment method of the former, the roll-shaped adhesive sheet is first cut into a single piece by cutting or pUnching, and then the adhesive layer is bonded to the adhesive layer. Support components. Thereafter, the semiconductor element singulated by the dicing step is bonded to the supporting member of the adhesive layer. Thereafter, a semiconductor device is manufactured by a bonding step such as wire bonding or sealing (see, for example, Patent Document 3). However, in the case of the one-piece attaching method, a dedicated assembling device for cutting out the succeeding sheet and then supporting the member is required, and therefore, compared with the method using silver paste 3 201141980, there is a problem that the manufacturing cost becomes high. On the other hand, the wafer is bonded to the other side of the adhesive layer by attaching the adhesive to the back side of the wafer. Thereafter, by a, the semiconductor wafer is placed in a single layer of the semiconductor wafer in a single month. Then, the semiconductor member with the adhesive layer is picked up. Then, after the wire bonding, sealing, etc., the package is used as a single piece, and the device can be used as a group for the silver paste to be used first or a part of the device to which the hot plate or the like is attached. The method of attaching the back side of the wafer is to use an assembly of the back sheet; in the method, attention has been paid as a method for making the second part relatively inexpensive (for example, the body element is small and thin, and the high performance is improved by the method. In the development of thin semiconductor devices, there are many layers of semiconductor devices: thinner semiconductor devices are used, and thinner semiconductor wafers are used. In order to improve the ultrasonic efficiency of the wire bonding and the high elasticity of the adhesive layer, the requirements for the high flexibility of the adhesive layer are more than the current ones. In addition, in order to simplify the assembly process, sometimes it is borrowed.

S 4 201141980 著劑層的-個面上貼合有切晶片的接著片、亦即將切晶片 與黏晶膜-體化而成的臈（以下有時稱為「切晶黏晶一體 式膜」）的方法，來實現對晶圓背面的貼合製㈣簡化。根 據該方法’可簡化對晶圓背面貼_的製程，故可減輕晶 圓破損的風險。切晶帶的軟化溫度通常為⑽。c以下。因 此，切晶m切的耗的情況下，㈣是考慮到切 晶帶的軟化溫度或晶圓翹曲的抑制，要求接著片可於 i〇〇°c低的溫度下貼附、即具有低溫下的優異加工性。 對於使用接著#而製造的半導體I置，要求於可靠 性、更具體而言為耐熱性、耐濕性及耐回焊性方面達成充 分的水準。為了麵耐回焊性，要求維持高的接著強度， 即於26此左右的回焊溫度下可抑難著劑層的剝離或破 壞。如此’強烈絲可高度地兼具低溫下的加工性及極薄 半導體元㈣絲效轉製鱗性、與包 導體裝置的可靠性的接著片。 汗 ';干 迄今為止’為了兼具低溫下的加工性與耐熱性，提出 了將玻璃轉移溫度上Tg)相對較低的熱塑性樹脂與熱硬化 性樹脂組合的膜接著劑（例如參照專利文獻5 )。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開平3-mi78號公報 [專利文獻2]日本專利特開平4_2則2號公 [專利文獻3]曰本專利特開平9-17810號公報 [專利文獻4]日本專利特開平4-196246號公報 5 201141980 [專利文獻5]日本專利第3〇14578號公報 然而，已知先前的半導體元件固定用接著劑無法在兼 具低溫下的加工性與耐回焊性的同時，於由黏晶後的組裝 步驟中受到的熱歷程所得的硬化性的方面亦達成充分的水 準。另外，謀求與半導體元件的多階積層化及半導體裝置 的薄型化相對應的半導體元件固定用接著劑的薄膜形成性 的進一步提高。進而，為了抑制伴隨著使用極薄半導體元 件的打線接合步驟中的超音波處理效率的進一步提高的由 該步驟的衝料朗_半導體元件破損，較迄今為止進 一步要求於黏晶後的組裝步驟中受到的熱歷程中使接著劑 的硬化進行’實現高彈性化。 【發明内容】 本發明是鑒於上述先前技術所具有的問題而成，其主 要目的在於提供一種可高度滿足薄膜形成性、低溫下的加 工性（低溫貼附性）及耐回焊性，且黏晶後的組裝步驟中 受到的熱歷程中可獲得充分的硬化性同時可達成高彈性化 的接著劑組成物，以及使用該接著劑組成物的接著片及 導體裝置。 本發明提供一種接著劑組成物，含有（A)重量平均 分子量為10000〜150000且以樹脂成分成為25質量％的 方式溶解於N-甲基-2-吡咯烷酮（以下稱中時的 25 C下的黏度為5泊（p〇ise)〜300泊的熱塑性樹脂:以 及（B)熱硬化性成分，並且上述（B)熱硬化性成^包含 (B1)具有烯丙基或環氧基的反應性塑化劑、（b2)具有 201141980 2烯基的化合物、及（B3)具有順丁烯二醜亞胺基的化 合物。 士述接著劑組成物的包括薄膜塗佈性的薄膜形成性優 二2接ί劑組成物所得的接著片可高度献低溫貼附 的接5，由本㈣的接著敝成物可獲得具有更薄 的接者Μ層的接著片，並且該接著片可於更低 =劑層_於半導體元件及支雜鱗被_=另外可 實現低溫、低壓且短時間的條件下的黏晶。另外，亦具 ::黏=低壓下，上的配線階差進行填埋的熱流 丰詩㈣’上述接者片的操作料，有助於切晶步驟等 戶裝製程的效率化。具有由上述接著劑組成物 所付的接讀層解導财置可純 =置的可靠性。另外，藉由黏晶後的組裝步二= 接:5 :予Γ烤(分步烘烤)及/或打線接合等的熱歷程， 的硬化充分進行，其彈性模數增大，結果可 t 合_超音波處理的效率，抑制打線接合時的 =所致的極薄半導體元件的破損或破壞，可有助於將極 =半導體讀多階積層化的半導體裝置恤裝性的效率 土述（Β1)具有烯丙基或環氧基的反應性塑化劑較佳 以d盼Α二縮水細、或稀丙基化雙盼Α ”表氯％ (eplchl〇r〇hydrin)的縮聚物。另外，上述 具有烯聽麵絲的反舰塑化财 ’ 液狀丙烯酸系聚合物。於接著劑組成物具上;： 201141980 可使B階段時的熱流動性、C階段時的熱流動抑制均得到 改善。 上述（B2)具有苯乙烯基的化合物較佳為包含於側鏈 上具有苯乙烯基的丙稀酸系聚合物。接著劑組成物包含於 側鏈上具有苯乙烯基的丙烯酸系聚合物，由此所得的接著 片的低逸氣性、半導體裝置組裝步驟中受到的熱歷程中的 硬化性、高溫時的彈性模數、耐濕性及高溫接著性進一步 提南。 上述（B)熱硬化性成分較佳為更含有（B4)於25<5(：、 1 atm下為固體狀的環氧樹脂。固體狀的環氧樹脂與液體 狀的環氧樹脂相比較，有分子量相對較大且官能基數相對 較多的傾向，故硬化後的交聯密度、低溫貼附性及耐回焊 性進一步提高。 上述（A)熱塑性樹脂較佳為Tg為l〇(rC以丁，另外 較佳為聚醯亞胺樹脂。於熱塑性樹脂具有上述構成時，可 更高度地達成耐熱性、純度及對被黏附體的良好的接著 性。此處’所謂純度’是指熱塑性樹脂中所含的驗金屬離 子、驗土金屬離子、鹵素離子特別是氯離子或水解性氣等 雜質離子的量的指標。 上述接著劑組成物較佳為更含有（C)填料。接著劑 組成物更含有（C)填料，藉此特別可更高度地達成切晶 時的易切斷性、拾取時自切晶帶的易剝離性、及耐回焊性。 另外’可有助於由組裝步驟中受到的熱歷程所致的彈性模 數、低吸濕性、回焊步驟中的破壞強度的提高。S 4 201141980 On the surface of the agent layer, a wafer-bonded back sheet is bonded to the wafer, and the wafer is bonded to the die-bonded film (hereinafter referred to as "cut-grain bonded-integrated film"). The method to achieve the simplification of the bonding on the back side of the wafer (4). According to this method, the process of attaching the wafer to the back side can be simplified, so that the risk of crystal breakage can be reduced. The softening temperature of the dicing tape is usually (10). c below. Therefore, in the case of the consumption of the dicing m-cut, (4) considering the softening temperature of the dicing tape or the suppression of the warpage of the wafer, it is required that the adhesive sheet can be attached at a low temperature of i 〇〇 °c, that is, has a low temperature. Excellent processability. For the semiconductor I fabricated using #, it is required to achieve a sufficient level of reliability, more specifically, heat resistance, moisture resistance, and reflow resistance. In order to maintain the reflow resistance, it is required to maintain a high bonding strength, i.e., peeling or breaking of the hardener layer at a reflow temperature of about 26 or so. Such a strong filament can highly combine the workability at low temperatures and the extremely thin semiconductor element (4) the effect of the wire-effect conversion and the reliability of the packaged conductor device. In the past, in order to achieve both workability and heat resistance at low temperatures, a film adhesive having a relatively low Tg) glass transition temperature and a thermosetting resin has been proposed (for example, refer to Patent Document 5). ). [PRIOR ART DOCUMENT] [Patent Document 1] Japanese Patent Laid-Open No. Hei No. 3-mi78 (Patent Document 2) Japanese Patent Laid-Open No. Hei No. Hei No. 2 No. 2 [Patent Document 3] Japanese Patent Laid-Open No. 9-17810 [Patent Document 5] Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. The workability and the reflow resistance are also at a sufficient level in terms of the hardenability obtained by the thermal history of the assembly process after the die bonding. In addition, the film formation property of the semiconductor element fixing adhesive corresponding to the multi-step stratification of the semiconductor element and the thinning of the semiconductor device is further improved. Further, in order to suppress the damage of the semiconductor element due to the further improvement of the ultrasonic processing efficiency in the wire bonding step using the ultra-thin semiconductor element, it is further required to be in the assembly step after the die bonding. In the thermal history of the exposure, the hardening of the adhesive is carried out to achieve high elasticity. SUMMARY OF THE INVENTION The present invention has been made in view of the problems of the prior art described above, and its main object is to provide a film which is highly satisfactory in film formability, low-temperature workability (low-temperature adhesion), and reflow-resistant property, and is viscous. In the thermal history subjected to the post-crystal assembly step, a sufficient curing agent can be obtained while achieving high flexibility, and an adhesive sheet and a conductor device using the adhesive composition. The present invention provides an adhesive composition comprising (A) a weight average molecular weight of 10,000 to 150,000 and a resin component of 25% by mass dissolved in N-methyl-2-pyrrolidone (hereinafter referred to as 25 C in the middle) a thermoplastic resin having a viscosity of 5 poise to 300 poise: and (B) a thermosetting component, and the above (B) thermosetting property includes (B1) reactivity having an allyl group or an epoxy group a plasticizer, (b2) a compound having an alkenyl group of 201141980, and (B3) a compound having a maleimide group. The film forming property of the composition of the primer is excellent in film formability. The adhesive sheet obtained by the composition can be highly adhered to the low-temperature attached joint 5, and the succeeding sheet having the thinner joint layer can be obtained from the subsequent tantalum of the present invention, and the adhesive sheet can be lower than the agent layer. _In the semiconductor component and the dowels _= In addition, it can realize the low-temperature, low-pressure and short-time conditions of the viscous crystal. In addition, it also has:: viscous = low voltage, the upper part of the wiring step is buried in the heat flow poem (4) 'The operation material of the above-mentioned receiver piece, which helps the crystal cutting step and other household decoration processes It is efficient. It has the reliability of the interception layer of the above-mentioned adhesive composition, which can be purely set. In addition, after the bonding, the assembly step 2 = pick: 5: pre-bake (step by step) The heat history of baking and/or wire bonding is sufficiently performed, and the elastic modulus is increased. As a result, the efficiency of the ultrasonic treatment can be reduced, and the extremely thin semiconductor element due to the = at the time of wire bonding can be suppressed. Damage or destruction, which can contribute to the efficiency of the semiconductor device of the multi-step multilayered semiconductor device (Β1). The reactive plasticizer having an allyl group or an epoxy group is preferably d. A polycondensate of eplchl〇r〇hydrin, which is a finely divided or dilute propylated hydrazine. In addition, the above-mentioned anti-vessel plasticized liquid liquid acrylic polymer having an olefinic surface yarn. The composition of the subsequent composition is:; 201141980, the thermal fluidity at the B phase and the heat flow inhibition at the C phase are both improved. The above (B2) compound having a styryl group preferably contains benzene on the side chain. Vinyl acrylic polymer. The adhesive composition contains benzene on the side chain. The acrylic polymer of vinyl, the low outgassing property of the obtained adhesive sheet, the hardening property in the thermal history received in the semiconductor device assembly step, the elastic modulus at high temperature, the moisture resistance, and the high temperature adhesion are further improved. The above (B) thermosetting component preferably further contains (B4) an epoxy resin which is solid at 25 < 5 (:, 1 atm). The solid epoxy resin and the liquid epoxy resin phase In comparison, there is a tendency that the molecular weight is relatively large and the number of functional groups is relatively large, so that the crosslinking density, low-temperature adhesion, and reflow resistance after curing are further improved. The above (A) thermoplastic resin preferably has a Tg of 10 ( rC is butyl, and further preferably polyimine resin. When the thermoplastic resin has the above configuration, heat resistance, purity, and good adhesion to the adherend can be more highly achieved. Here, the term "purity" refers to an index of the amount of impurity ions such as metal ions, soil metal ions, halogen ions, particularly chloride ions or hydrolyzable gases contained in the thermoplastic resin. The above adhesive composition preferably further contains (C) a filler. Further, the composition of the second component further contains (C) a filler, whereby particularly, the cuttability at the time of dicing, the easy peeling property from the dicing tape at the time of picking, and the reflow resistance can be more highly achieved. Further, it can contribute to the improvement of the elastic modulus, the low hygroscopicity, and the breaking strength in the reflow step due to the heat history received in the assembly step.

S 8 201141980 合適地^著T組成物較佳為半導體元件固定用，特別可 :多個半導式來製造使用極薄晶圓積層 版凡1千的半導體裝置。 ιϊίι τλί ^提仏種具備將上述接著劑組成物成形為膜狀 者劑層的接著片。具備膜狀的接著劑層的接著片 方呆谷易，有助於切晶步驟等半導體裝置組裝製程的效 率化。 上述接著片較佳為更具備支持膜，且於該支持膜上具 備上述接者劑層。 另外，上述接著片亦可更具備切晶片，於該切晶片上 設有上述接著劑層。 另外，上述切晶片亦可具有基材膜及設置於該基材膜 上的黏著材層，且於上述黏著劑層上設置有上述接著劑層。 接著片具備支持膜或切晶片，藉此該接著片的操作性 進一步提高。特別藉由將具備切晶片的接著片用作兼具切 曰曰片與黏晶膜兩者的功能的切晶.黏晶一體式膜，可進一步 簡化半導體裝置的製造步驟。 本發明提供一種半導體裝置’具備一個或兩個以上的 半導體元件以及支持構件’且上述半導體元件與上述支持 構件、及/或上述半導體元件彼此是藉由上述接著劑組成物 而接著。 上述半導體裝置可同時達成内置的極薄半導體元件的 多階積層化與小型薄層化，具有高性能、高功能及高可靠 性（特別是耐回焊性、耐熱性、耐濕性等），另外即便經過 201141980 打線接合等使用超音波處理的步驟，亦能以高效率進行製 造。 、 [發明的效果] 本發明的接著劑組成物的包括薄膜塗佈性的薄膜形成 性優異，由接著劑組成物所得的接著片可高度滿足低^貼 附性。進而，使用由接著劑組成物所得的接著劑層的= ，裝置的耐回焊性優異’且可獲得藉_晶後的組褒步驟 中受到的熱歷程可使接著劑層充分硬化、 性模數的接著劑層。 U同的弹 本發日㈣接著触成物適合驗以晶圓背面貼附方式 來製造使職薄晶圓積層衫辦導體元㈣ 置二劑層時’通常加熱至接著劑組成物熔 皿度為止由使林發明的接著劑喊物， 於，附於晶圓背面，可減少對晶圓 便於使用大徑化且薄化的晶圓時，亦 了顯者抑制觀曲專問題的產生。 根據本發明，亦可確保可對基 ，熱流動性。因此，可合適 == 時的高接箬㈣進而’由於可確保高溫 時的同接者強度，故可提高耐熱性 簡化半導體裝置的製造步驟。 浮j祕並且可 本發明於切晶時的碎片飛散 ===4::提高、及逸氣性二= 轉對於封裝陳裝·_定的特性。 20114198α 本發明的半導體裝置是製造步驟經簡化、可靠性優異 的半導體裝置。本發明的半導體裝置可充分達成安裝半導 體元件時所要求的耐熱性及耐濕性。 *為讓本發明之上述和其他目的、特徵和優點能更明顯 易懂’下文特舉較佳實施例，並配合所附圖式，作詳細說 明如下。 【實施方式】 以下，視情況一邊參照圖式，一邊對合適的實施形態 加以詳細說明。再者，圖式的說明中對相同要素標註相同 符號，適當省略重複的說明。上下左右等的位置關係只要 無特別說明，則是基於圖式所示的位置關係。圖式的尺寸 比率不限於圖示的比率。 圖1〜圖3分別為表示接著片的合適的一實施形態的 剖面圖。圖1所示的接著片100是僅由將本發明的接著劑 組成物成形為膜狀的接著劑層1所構成。接著劑層丨的厚 度較佳為0.5 μιη〜200 μιη ’更佳為0.5 μιη〜1〇〇 μιη，進而 佳為1 μιη〜50 μιη。接著片1〇〇例如亦可為寬1 mm〜2〇 mm左右的帶狀、或寬1〇 cm〜5〇 cm左右的片狀，此時， 較佳為以捲繞於捲芯上的狀態搬送 藉此，接著片l〇Q的 保管或搬送變容易。接著片100亦可為以厚膜化為目的而 將單層的接著劑層1重合多層並貼合的積層體。 圖2所示的接著片110具備支持膜2及設置於其兩主 面上的接著劑層1。支持膜2作為支持接著劑層1的基材 而發揮功能。亦可僅於支持膜2的單面上設置接著劑層1。 11 201141980 圖3所示的接著片120具備支持膜2、接著劑層丄及 保護膜3，且該些構件依此順序積層。保護膜3是以防止 接著劑層1的損傷或污染為主要目的，以覆蓋接著劑層ι 的與支持膜2為相反侧的主面方式設置。通常，剝離保護 臈3後將接著片12〇用於黏晶。 接著片#乂佳為可於保遵帶及切晶帶的軟化溫度以下的 低溫下貼附於被黏附體。可貼附的溫度低於抑制半導體晶 圓龜曲的方面亦有利。具咖言，將接著綱1貼附於被 黏附體的溫度較佳為1(rc〜15(rc，更佳為2〇&lt;t〜1〇(rc， 進而佳為2〇°C〜8〇。(：。為了可於此種低溫下貼附，接著劑 層1的Tg較佳為i〇〇°c以下。 接著劑層1是將接著劑組成物成形為膜狀而獲得。以 下’對接著劑組成物加以詳細說明。接著劑組成物含有（a) 熱塑性樹脂以及（B)熱硬化性成分。 。（A)熱塑性樹脂的Tg較佳為1〇(rc以下更佳為 -20C〜80°C。若（A)熱塑性樹脂的Tg超過1〇(rc，則對 半導體晶圓背面的貼附溫度超過i5〇〇c的可能性變高，若 Tg低於-20°C ’則有B階段狀態下的接著劑層i表面的黏 性變強，操作性逐漸下降的傾向。 關於（A)熱塑性樹脂的上述Tg是對成形為膜狀的該 / A)熱塑性樹脂的動態黏彈性的溫度依存性進行測定^ 觀測到的主分散的波峰溫度。（A)触性顧的動態黏彈 性例如疋使用35 mmxlO mmx4〇 厚的試驗片，以升溫 速度5C/mm、頻率ιΗζ、測定溫度_15〇。〇〜3〇〇。(：的條件S 8 201141980 It is preferable that the T composition is preferably used for fixing a semiconductor element, and in particular, a semiconductor device using an extremely thin wafer laminate of one thousand can be manufactured by a plurality of semiconductors. ϊ ϊ ι ι ί 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The subsequent filming of the film-like adhesive layer facilitates the efficiency of the semiconductor device assembly process such as the dicing step. Preferably, the adhesive sheet further comprises a support film, and the support layer is provided on the support film. Further, the above-mentioned adhesive sheet may further comprise a cut wafer, and the adhesive layer may be provided on the cut wafer. Further, the cut wafer may have a base film and an adhesive layer provided on the base film, and the adhesive layer may be provided on the adhesive layer. The sheet is then provided with a support film or a cut wafer, whereby the operability of the sheet is further improved. In particular, by using the succeeding sheet having the cut wafer as a dicing, die-bonding integrated film having both the function of the dicing sheet and the die-bonding film, the manufacturing steps of the semiconductor device can be further simplified. The present invention provides a semiconductor device comprising one or two or more semiconductor elements and a supporting member, and the semiconductor element and the supporting member and/or the semiconductor element are followed by the above-described adhesive composition. The semiconductor device can simultaneously achieve multi-step stratification and small thin layering of the built-in extremely thin semiconductor element, and has high performance, high function, and high reliability (especially resistance to reflow, heat resistance, moisture resistance, etc.). In addition, even after the steps of ultrasonic processing such as wire bonding in 201141980, it can be manufactured with high efficiency. [Effects of the Invention] The adhesive composition of the present invention is excellent in film formability including film coating property, and the adhesive sheet obtained from the adhesive composition can highly satisfy low adhesion. Further, using the adhesive layer obtained from the adhesive composition =, the device has excellent reflow resistance, and the heat history received in the grouping step after the crystallization can be obtained to sufficiently harden the adhesive layer, and the mold can be sufficiently cured. A number of adhesive layers. The same bullet is issued on the same day (4), and then the touch is suitable for the wafer backside attachment method to manufacture the conductor thin layer laminated shirt to carry the conductor element (4) when the second layer is set to 'normally heated to the composition of the adhesive composition. As a result, the adhesive agent of the invention was attached to the back surface of the wafer, and the wafer having a large diameter and a thinned wafer was reduced, and the problem of observing the curvature was also significantly suppressed. According to the present invention, it is also possible to ensure the base and heat fluidity. Therefore, it is possible to improve the heat resistance of the semiconductor device by the high connection (4) at the time of == and further, since the strength of the same connector at a high temperature can be ensured. The invention is characterized by the fact that the debris of the invention is scattered during the dicing process ===4::improvement, and outgassing two=turning characteristics for the package aging. 20114198α The semiconductor device of the present invention is a semiconductor device which is simplified in manufacturing steps and excellent in reliability. The semiconductor device of the present invention can sufficiently achieve the heat resistance and moisture resistance required when mounting a semiconductor element. The above and other objects, features, and advantages of the present invention will become more apparent and understood < [Embodiment] Hereinafter, a suitable embodiment will be described in detail with reference to the drawings. In the description of the drawings, the same elements are denoted by the same reference numerals, and the repeated description is omitted as appropriate. The positional relationship such as up, down, left, and right is based on the positional relationship shown in the drawing unless otherwise specified. The size ratio of the drawing is not limited to the ratio shown. Fig. 1 to Fig. 3 are cross-sectional views showing a preferred embodiment of the succeeding film. The adhesive sheet 100 shown in Fig. 1 is composed only of the adhesive layer 1 in which the adhesive composition of the present invention is formed into a film shape. The thickness of the layer of the coating layer is preferably from 0.5 μm to 200 μm η, more preferably from 0.5 μm to 1 μm, and further preferably from 1 μm to 50 μm. The sheet 1 may be, for example, a strip having a width of about 1 mm to 2 mm, or a sheet having a width of about 1 cm to about 5 cm. In this case, it is preferably wound around the core. By this, it is easy to store or transport the sheet l〇Q. The sheet 100 may be a laminate in which a single layer of the adhesive layer 1 is superposed and bonded to each other for the purpose of thickening. The adhesive sheet 110 shown in Fig. 2 is provided with a support film 2 and an adhesive layer 1 provided on both main surfaces thereof. The support film 2 functions as a substrate supporting the adhesive layer 1. The adhesive layer 1 may be provided only on one side of the support film 2. 11 201141980 The adhesive sheet 120 shown in Fig. 3 is provided with a support film 2, an adhesive layer 丄 and a protective film 3, and these members are laminated in this order. The protective film 3 is mainly provided for preventing damage or contamination of the adhesive layer 1, and is provided so as to cover the main surface of the adhesive layer ι opposite to the support film 2. Usually, the peeling protection 臈3 will be followed by the sheet 12 〇 for the die-bonding. The film #乂佳 is attached to the adherend at a low temperature below the softening temperature of the tape and the dicing tape. It is also advantageous that the attachable temperature is lower than the aspect of suppressing the semiconductor crystal tortuosity. It is said that the temperature attached to the adherend is preferably 1 (rc~15 (rc, more preferably 2〇&lt;t~1〇(rc, and further preferably 2〇°C~8) :. (In order to be attachable at such a low temperature, the Tg of the adhesive layer 1 is preferably i 〇〇 °c or less. The subsequent agent layer 1 is obtained by forming an adhesive composition into a film shape. The adhesive composition is described in detail. The adhesive composition contains (a) a thermoplastic resin and (B) a thermosetting component. (A) The Tg of the thermoplastic resin is preferably 1 Torr (more preferably rc or less -20C~) 80 ° C. If the Tg of the (A) thermoplastic resin exceeds 1 〇 (rc, the possibility that the adhesion temperature to the back surface of the semiconductor wafer exceeds i5 〇〇 c becomes high, and if the Tg is lower than -20 ° C ' The viscosity of the surface of the adhesive layer i in the B-stage state becomes strong, and the workability tends to gradually decrease. The above-mentioned Tg of the (A) thermoplastic resin is the dynamic viscoelasticity of the /A) thermoplastic resin formed into a film shape. The temperature dependence is measured. ^ The observed peak temperature of the main dispersion. (A) The dynamic viscoelasticity of the contact property, for example, using a test piece of 35 mm x 10 mm x 4 thickness. Temperature rise rate of 5C / mm, the frequency ιΗζ, measurement temperature _15〇.〇~3〇〇 (: conditions

S 12 201141980 下測疋此日守’主分散中福（損耗正切）顯示最大值的 溫度（主分散溫度）為Tg。黏彈性的測定可使用 Rheometrics 股二有限公3製造的轉齡析儀（商品名 :RSA-2 )來 進灯―。再者，所謂上述⑷熱塑性樹脂，是指藉由加熱 而熔^或軟化並藉由外力而變形流動、冷卻後固化的直鍵 狀或^支狀高分子’即便於分刊具有反應㈣官能基， 八要是如上述般具有由加熱所得的流動性的樹脂，則包括 在（A)熱塑性樹脂中。 此種（A)熱塑性樹脂並無特別限定，例如可列舉聚 醯亞胺樹脂、聚醯胺樹脂、聚醯胺醯亞胺樹脂、聚醚醯亞 胺樹脂、聚胺基曱酸酯醯亞胺樹脂、聚胺基甲酸酯醯胺醯 亞胺樹脂、矽氧烷聚醯亞胺樹脂、聚酯醯亞胺樹脂或該些 樹脂的共聚物、苯氧樹脂、聚砜樹脂、聚醚颯樹脂、聚笨 硫醚樹脂、聚酯樹脂、聚醚酮樹脂、聚乙烯醇樹脂、聚乙 烯丁醛樹脂、苯乙烯-順丁烯二醯亞胺共聚物、順丁烯二醯 亞胺-乙烯基化合物共聚物、或（曱基)丙烯酸系共聚物等。 (A )熱塑性樹脂的重量平均分子量為ι〇〇〇〇〜 150000。若重量平均分子量超過15〇〇〇〇，則有b階段的熱 流動性下降的傾向’若重量平均分子量低於1〇〇〇〇，則有 成膜性下降的傾向。重量平均分子量是進行高速液相層析 儀（Gel Permeation Chromatography，GPC (例如島津製作 所股份有限公司製造，商品名：C-R4A))測定而獲得的標 準聚苯乙烯換算值。再者，上述GPC測定中，對溶劑使用 二曱基甲醢胺（DMF) +溴化鋰（LiBr) (0.03 mol (相對 13 201141980 於 DMF 1 L)) + 磷酸（〇.〇6mol (相對於 DMF 1 L))，對 管柱使用G6000HXL+G4000HXL+G2000HXL (東曹股份有 限公司製造）。另外，試料濃度設定為10 mg/5 mL，注入 量設定為0.5 mL，壓力設定為100 kgf/cm2，流量設定為 1-OOmL/min，測定溫度設定為25°C。 另外，（A)熱塑性樹脂以樹脂成分成為25質量％的 方式溶解於NMP中時的25°C下的黏度為5泊〜300泊， 較佳為1〇泊〜2〇〇泊。上述黏度成為由熱塑性樹脂的高分 子鏈的交纏、或分子内所含的極性基間的相互作用導致的 分子間的相吸所引起的高分子鏈凝聚性的指標，該值越 大，可謂高分子鏈的凝聚性越大。隨著所使用的熱塑性樹 脂，重量平均分子量變大，另外隨著分子内極性基的濃度 變高，高分子鏈凝聚性變大，其NMP溶液的黏度有上升 的傾向。藉由使用NMP溶液的黏度在上述範圍内的轨塑 性樹脂，可高度地兼具包括薄膜形成性的良 性 熱流動性、及高溫時的接著性。若織超過· 薄 ==降，另外高分子鏈凝聚性變大，故有所得的接 階段中的熱流動性下降的傾向，若黏度小 降〉白’則藉由成膜化所得的膜變脆，作為 :::==:所得_劑二 E型：上==計二有:公司製造的 速為5 rpm的條件下對以25質I · m、轉 買里/〇的樹月日成分溶解的溶 201141980 液（清漆）進行測定時的值。 於（A)熱塑性樹脂的重量平均分子量及NMp溶液黏 度均超過上述範圍的上限時，高分子鏈的交纏及分子结構 引起的分子間相互作用（分子間的相吸）均變大，故^得 的接著劑層的勤性及高溫時的物性（強度）優異，但b = 段的熱流動性下降。另-方面，於⑷熱塑性樹脂的^ 置平均分子量及NMP溶液黏度均小於上述範圍的下限 時，高分子鏈的交纏及分子結構引起的分子 子間的相吸）均變小，故㈣段的熱流動性提高， 時的自支持性下降（向脆性化方向發展）。另外，於所使用 的（A)熱塑性樹脂的重量平均分子量小於上述範圍的下 限’且NMP &gt;容液黏度超過上述範圍的上限時，聚合物的 極性變高’故有所得的接著劑層為高吸 熱塑性樹脂的重量平均分子量超過上述範圍的上：且) 随^容綠度小於上述範_下_，儘管她的高分子 鏈的父纏大’但分子結構引起的分子間相互作用（分子間 的相吸）相對較弱，故高溫時的物性（強度）向下降的方 向發展。 (A)熱塑性樹脂較佳為可溶於二曱基甲醯胺、二甲 士乙醯月女NMP、二曱基亞颯、二乙二醇二甲趟、曱苯、 本，甲本甲基乙基酮、曱基異丁基酮、四氫π夫喃、乙 基溶纖劑、乙基溶纖劑乙酸酯、丁基溶纖劑、二噁烷、環 己酮或乙酸乙酯等有機溶劑。 ， (A)熱塑性樹脂較佳為聚醯亞胺樹脂。聚醯亞胺樹 15 201141980 脂可單獨使用-種或視需要將兩種以上組合使用。上 醯亞胺樹脂是使_酸二_二胺彻通常的方法、例如 ^有機*射進行縮合反應而獲得^各成分的添加順序任 於m：以下、較佳為叱〜贼進行加成反應， 應進行，反舰的黏度逐漸场，生成作為聚酿亞 ^月曰的前驅物的雜胺酸。亦可藉由將所生成的聚_ -於50C〜8G°C的溫度下加熱使其解聚合，*調整其分子 ^可使誠麟騎财_喊得聚醯亞麟脂。脫 =環可藉由進行加熱處__環法、或使舰水劑的 化學閉環法來進行。 ^述縮合反應中的四魏二_二胺的組成比亦可為 莫耳’視需要亦可於相對於四紐二酐1〇 _而二胺 =0.5 _〜2.〇 mo卜較佳為〇 8 】〇 _的範圍内調 整、，且成比。若相對於四賴二酐i Q _而二胺超過2 〇 則有所得的祕亞_財具有胺末端的聚酿亞胺 低，物的量變多的傾向。若相對於赠酸二軒！ 〇福而 二，小於0.5 mol，則有所得的聚醯亞胺樹脂中具有酸末端 的聚醯亞胺低聚物的量變多的傾向。於任―情況下，均有 的重量平均分子量變低’接著劑層的包括耐 性下降的傾向。另外，於接著劑組成物含有 具有與該些末端的反舰的環氧_時，隨著上述聚醯亞 =聚物的量變多，有接著劑組成物的保存穩定性下降的 h 傾向特別隨著胺末端的輯亞胺低聚物的量變多 而變顯著。 201141980 四缓酸二酐較佳為於縮合反應前於較其熔點低10〇c 〜20 C的溫度下加熱乾燥12小時以上，或藉由自乙酸酐的 再結晶而進行純化處理。四羧酸二酐的由示差掃描熱量測 3十（Differential Scanning Calorimeter，DSC)所得的吸熱 開始溫度與吸熱波峰溫度的差較佳為1〇〇c以内。該溫度差 的值可用作四羧酸二酐的純度的指標。吸熱開始溫度及吸 熱波峰溫度是使用DSC (Perkin Elmer股份有限公司製 造，DSC-7型）’以樣品量為5 mg、升溫速度為5〇c/min、 測定環境為氮氣的條件下測定時的值。 用作聚醯亞胺樹脂的原料的四羧酸二酐例如是自以下 化合物中選擇一種或兩種以上：苯均四酸二針、3，H4'_ 聯笨四羧酸二酐、2,2，，3,3，-聯苯四羧酸二酐、2,2_雙(3,4_二 羧基苯基)丙烷二肝、2,2-雙(2,3_二羧基笨基)丙烷二酐、u_ 雙(2,3-二羧基苯基）乙烷二酐、U-雙(3,4_二羧基苯基）乙烷 二軒、雙(2,3-二羧基苯基）甲烷二酐、雙(3,4_二羧基苯基) 曱烷二酐、雙(3,4-二羧基苯基)磷二酐、3,4,9，1〇_花四羧酸 一酐、雙(3,4_二羧基苯基）_二酐、苯-1,2,3,4-四羧酸二酐、 3,4,3’，4’-二苯曱酮四羧酸二酐、2,3,2，，3，-二苯曱酮四羧酸二 針、3,3,3，，4，-二苯曱酮四羧酸二肝、^卜萘四羧酸二酐、 1，4,5,8·萘四羧酸二酐、2,3,6,7-萘四綾酸二酐、i，2,4,5-萘四 羧酸二酐、2,6-二氯萘-1，4,5,8-四竣酸二酐、2,7-二氣萘 -1，4,5,8-四羧酸二酐、2,3,6,7-四氣萘-M，5,8_四羧酸二酐: 菲_1，8,9，10-四羧酸二酐、吡嗪_2,3,5,6-四羧酸二酐、噻吩 -2,3,5,6-四羧酸二酐、2,3,3，，4，-聯笨四羧酸二酐、3,4,3，，4,_ 17 201141980 聯苯四羧酸二酐、2,3,2’，3，-聯苯四羧酸二酐、雙(3,4_二羧基 苯基)二曱基矽烷二酐、雙(3,4-二羧基苯基）甲基苯基矽烷 二酐、雙(3,4-二緩基苯基)二苯基石夕燒二酐、1，4_雙(3,4-二 叛基苯基二曱基石夕烧基）苯二酐、1，3_雙(3,4_二羧基苯 基)-1，1，3,3-四曱基二環己烧二酐、對伸苯基雙(脫水偏苯三 酸醋）、伸乙基四羧酸二酐、1，2,3,4-丁烷四羧酸二酐、十氫 萘-1，4,5,8-四羧酸二酐、4,8-二曱基六氫萘 -1，2,5,6-四叛酸二酐、環戊烧-i，2,3,4-四缓酸二酐、η比洛烧 -2,3,4,5-四叛酸二酐、1，2,3,4-環丁燒四跋酸二針、雙（夕卜_ 雙環[2,2，1]庚烧-2,3-二緩酸二針、雙環_[2,2,2]_辛-7-稀 _2,3,5,6-四羧酸二酐、2,2-雙(3,4·二羧基苯基)丙烷二酐、2,2_ 雙[4-(3,4-二叛基苯基)苯基]丙烧二酐、2,2_雙(3,4·二叛基苯 基)六氟丙烷二酐、2,2-雙[4-(3,4-二羧基苯基)苯基]六氟丙 烧二酐、4,4’_雙(3,4-二叛基苯氧基)二笨硫醚二酐、1，4-雙 (2_羥基六氟異丙基)笨雙(偏苯三酸酐）、1，3-雙(2-羥基六氟 異丙基)苯雙(偏苯三酸酐）、5-(2,5-二氧四氫呋喃基)_3·曱基 -3-¾己烯-l，2-二羧酸二酐、四氫呋喃_2,3,4,5-四羧酸二 針、4,4’-氧基二鄰苯二甲酸二酐、mw#-異亞丙基二苯 氧基)雙（鄰苯二曱酸二酐）、1，2-(伸乙基)雙(脫水偏笨三酸 醋）、1，3-(三亞甲基)雙(脫水偏笨三酸酯）、[4-(四亞曱基) 雙（脫水偏苯三酸酯）、ι，5·(五亞甲基）雙（脫水偏笨三酸 酉旨）、1，6-(六亞曱基)雙(脫水偏笨三酸酯）、1/7_(七亞曱基) 雙（脫水偏苯三酸酯）、1，8-(八亞曱基）雙（脫水偏笨三酸 醋）、1，9-(九亞甲基)雙(脫水偏笨三酸醋）、&quot;〇_(十亞甲基) 201141980 雙(脫水偏苯三酸酯）、1,12-(十二亞曱基)雙(脫水偏苯三酸 醋1，16-(十六亞曱基)雙(脫水偏苯三酸酯）、118_(十八亞 曱基)雙(脫水偏苯三酸酯）。該些中，就可賦予更優異的耐 濕可靠性的觀點而言，較佳為4,4，~氧基二鄰苯二曱酸二 酐、及4,4，-(4,4，-異亞丙基二苯氧基)雙(鄰苯二曱酸二酐）。 另外’就可賦予更優異的熱流動性的觀點而言，較佳為 1，1〇-(十亞曱基)雙(脫水偏苯三酸酯）、1，12-(十二亞曱基) 雙(脫水偏苯三酸酯）、1，16-(十六亞甲基)雙(脫水偏苯三酸 醋)及1，18·(十八亞曱基)雙(脫水偏苯三酸酯）。 用作聚隨亞胺樹脂的原料的二胺例如是選自以下的化 合物中：鄰苯二胺、間苯二胺、對苯二胺、3,3，_二胺基二 苯基醚、3,4’-二胺基二苯基醚、4,4，-二胺基二苯基醚、3,3'-二胺基二苯基甲烷、3,4··二胺基二苯基曱烷、4,4，-二胺基 二苯基曱烷、雙(4-胺基-3,5-二曱基苯基）甲烷、雙(4-胺基 -3,5-二異丙基苯基）曱烷、3,3’-二胺基二苯基二氟曱烷、3,4，-二胺基二苯基二氟曱烷、4,4’-二胺基二苯基二氟曱烷、3,3，-二胺基二苯基石風、3,4’-二胺基二苯基颯、4,4’-二胺基二苯 基石風、3,3 -—胺基·一本硫謎、3,4’-二胺基二苯硫崎、4,4’~ 二胺基二苯硫醚、3,3'-二胺基二苯基酮、3,4’-二胺基二苯 基酮、4,4'-二胺基二苯基酮、2,2-雙(3-胺基苯基）丙烷、 2,2’-(3,4'_二胺基二苯基）丙烷、2,2_雙(4-胺基苯基）丙烷、 2,2-雙(3-胺基苯基)六氟丙烷、2,2_(3,4’-二胺基二苯基)六氟 丙烷、2,2_雙(4_胺基苯基)六氟丙烷、1，3_雙(3_胺基苯氧基) 苯、1，4-雙(3-胺基苯氧基)苯、1,4-雙(4-胺基笨氧基)苯、 201141980 3,3’-(l，4-伸苯基雙(1-曱基亞乙基))雙苯胺、3,4’-(l，4-伸苯基 雙(1-曱基亞乙基))雙苯胺、4,4·-(1，4-伸苯基雙(1-曱基亞乙 基))雙苯胺、2,2-雙(4-(3-胺基苯氧基）苯基）丙烷、2,2-雙 (4-(3_胺基苯氧基)苯基)六氟丙烷、2,2-雙(4-(4-胺基笨氧基) 苯基)六氟丙烷、雙(4-(3-胺基苯氧基)苯基)硫醚、雙(4_(4-胺基苯氧基)苯基)硫醚、雙(4-(3-胺基苯氧基)苯基)砜、雙 (4-(4-胺基苯氧基)苯基)砜、3,3’-二羥基-4,4’-二胺基聯苯、 3,5-二胺基苯曱酸等芳香族二胺；ι，3-雙（胺基甲基)環己 烷、2,2-雙(4-胺基苯氧基苯基）丙烷、4,7，10-三氧雜十三烷 -1,13-二胺、4,9-二氧雜癸烷-1，12-二胺、2,4-二胺基-6-(二 烯丙基胺基-)1，3,5-三嗪（別名：Ν，Ν·-二烯丙基三聚氰胺）、 乙烯基二胺基三嗪、Ν,Ν·-雙(3-胺基丙基)伸乙基二胺、Ν，Ν·-雙胺基丙基-1，3-伸丙基二胺、Ν，Ν’-雙胺基丙基-1，4-伸丁基 二胺、Ν-(3-胺基丙基）1，3-丙烷二胺、甲基亞胺基雙丙基 胺、月桂基亞胺基雙丙基胺、1，4-(雙胺基丙基)哌嗪，除此 以外，太陽工程化學股份有限公司製造的Jeffamine D-230、Jeffamine D-400、Jeffamine D-2000、Jeffamine D-4000、Jeffamine ED-600、Jeffamine ED-900、Jeffamine ED_2〇(U、Jeffamine EDR-M8 ’ BASF 股份有限公司製造的 聚醚胺D-230、聚醚胺D-400、聚醚胺D-2000等聚氧伸烷 基二胺等脂肪族二胺；進而1，2-二胺基乙烷、1，3-二胺基丙 烷、1，4-二胺基丁烷、1,5-二胺基戊烷、1，6-二胺基己烷、 1，7-二胺基庚烷、1，8-二胺基辛烷、1，9-二胺基壬烷、1，1〇-二胺基癸烷、1，11-二胺基十一烷、1，12-二胺基十二烷、1，2- 201141980 二胺基環己烷等脂肪族二胺；進而，1,1,3,3-四曱基-1，3-雙 (4-胺基苯基)二矽氧烷、l，l，3,3-四苯氧基-1,3-雙(4-胺基乙 基)二矽氧烷、1,1，3,3-四苯基-1,3·•雙(2-胺基乙基)二矽氧 烧、1，1，3,3-四苯基-1,3-雙(3_胺基丙基)二石夕氧烧、l，l,3,3-四曱基-l，3-雙(2-胺基乙基)二矽氧烷、l，1，3,3-四曱基-l，3-雙(3-胺基丙基)二矽氧烷、l,l，3,3-四曱基_l，3-雙(3-胺基丁 基)二矽氧烧、1，3-二曱基_1，3_二曱氧基_1,3_雙(4-胺基丁基) 二矽氧烷、1，1，3,3,5,5-六曱基-1,5-雙(4-胺基苯基)三矽氧 烧、1，1，5,5-四苯基-3,3-二曱基-1,5-雙(3-胺基丙基)三矽氧 規、1，1，5,5·四本基-3,3-二曱氧基-1，5_雙(4-胺基丁基)三石夕 氧烷、1，1，5,5-四苯基-3,3-二甲氧基-i，5-雙(5-胺基戊基)三 矽氧烷、1，1，5,5_四甲基_3,3_二甲氧基Μ雙(2胺基乙基） 三矽氧院、1，1，5,5-四曱基_3,3_二曱氧基心义雙屮胺基丁基) 三石夕氧烧、1，1，5,5-㈣基_3,3_二甲氧基-以雙 三石夕氧烧、似如-六仏仏雙㈣基丙旬三石夕氧) 烷、1，1，3,3,5,5-六乙基-i，5-雙(3·胺基丙基）三石夕氧烷、 U，3,3,5,5-六丙基_U_雙(3·胺基丙基)三石夕氧燒等 二胺。該些二胺可單獨使用—種或組合使用兩種以上。 為了使聚醯亞胺樹脂的Tg為i 〇〇〇c以下 =伸燒基二胺等脂肪族二胺。該月旨肪族二胺二使^ 總！的比率較佳為i mol%〜80 mol%，更 子於一 mol%。若脂肽姓-晚从才 巧mol%〜6〇 8〇福%，則聚醯亞胺樹脂的Tg過度變低接J片右超過 自支 21 201141980 持性下降的可能性變高。 脂肪族二胺的市售品例如可列舉：太陽工程化學股份 有限公司製造的 Jeffamine D-230、Jeffamine D-400、 Jeffamine D-2000、Jeffamine D-4000、Jeffamine ED-600、 Jeffamine ED-900、Jeffamine ED-2001 或 Jeffamine EDR-148，BASF股份有限公司製造的聚醚胺D-230、聚醚 胺D-400或聚醚胺D-2000等聚氧伸烷基二胺。 聚酿亞胺樹脂的重量平均分子量較佳為1 〇〇〇〇〜 150000，更佳為 20000〜80000。 藉由將重量平均分子量控制於該些數值範圍内，接著 劑層的強度、可撓性及黏性變得更良好。另外，由於亦可 獲得適當的熱流動性，故可更充分地確保對被黏附體表面 的階差的良好的填埋性。若聚醯亞胺樹脂的重量平均分子 量小於10000，則有接著劑組成物的成膜性下降，或接著 劑層的強度變小的傾向。若聚醯亞胺樹脂的重量平均分子 量超過150000，則有熱流動性逐漸下降，或對被黏附體的 凹凸表面的填埋性下降的傾向。 藉由將聚醯亞胺樹脂的Tg及重量平均分子量設定於 上述範圍内，不僅可將接著劑層對被黏附體的貼附溫度抑 制得更低，亦可降低將半導體元件接著固定於支持樽&amp;時 的加熱溫度（黏晶溫度）。其結果，可更顯著地抑制半導體 ，件的翹曲的增大。於支持構件為有機基板時’可抑制黏 晶時的加熱溫度導致的上述有機基板的吸濕水分的急遽氣 化，可抑制氣化所致的黏晶材層的發泡。 虱S 12 201141980 The temperature (main dispersion temperature) at which the maximum value of the main dispersion (loss tangent) shows the maximum value is Tg. The viscoelasticity can be measured by using a aging analyzer (trade name: RSA-2) manufactured by Rheometrics Co., Ltd. In addition, the above-mentioned (4) thermoplastic resin refers to a linear bond or a branched polymer which is melted or softened by heating and deformed by an external force, and solidified after cooling, and has a reaction (four) functional group even in the publication. Further, if it is a resin having fluidity obtained by heating as described above, it is included in (A) a thermoplastic resin. The (A) thermoplastic resin is not particularly limited, and examples thereof include a polyimide resin, a polyamide resin, a polyamide amide resin, a polyether quinone resin, and a polyamine phthalate. Resin, polyurethane amide amine imide resin, decyl oxynimide resin, polyester phthalimide resin or copolymer of these resins, phenoxy resin, polysulfone resin, polyether oxime resin , polystyrene thioether resin, polyester resin, polyether ketone resin, polyvinyl alcohol resin, polyvinyl butyral resin, styrene-maleimide copolymer, maleimide-vinyl A compound copolymer or a (mercapto)acrylic copolymer or the like. (A) The weight average molecular weight of the thermoplastic resin is from ι to 150,000. When the weight average molecular weight exceeds 15 Torr, the thermal fluidity at the b-stage tends to decrease. When the weight average molecular weight is less than 1 Å, the film formability tends to decrease. The weight average molecular weight is a standard polystyrene equivalent value obtained by a high-performance liquid chromatography (Gel Permeation Chromatography, GPC (for example, manufactured by Shimadzu Corporation, trade name: C-R4A)). Further, in the above GPC measurement, dimercaptomethylamine (DMF) + lithium bromide (LiBr) (0.03 mol (relative to 13 201141980 in DMF 1 L)) + phosphoric acid (〇.〇6 mol (relative to DMF 1) was used for the solvent. L)), G6000HXL+G4000HXL+G2000HXL (manufactured by Tosoh Corporation) was used for the column. Further, the sample concentration was set to 10 mg/5 mL, the injection amount was set to 0.5 mL, the pressure was set to 100 kgf/cm2, the flow rate was set to 1-OOmL/min, and the measurement temperature was set to 25 °C. In addition, the viscosity at 25 ° C when the thermoplastic resin (A) is dissolved in NMP so that the resin component is 25% by mass is 5 poise to 300 poise, preferably 1 poise to 2 poise. The viscosity is an index of the polymer chain cohesiveness caused by the inter-molecular attraction caused by the interlinking of the polymer chain of the thermoplastic resin or the interaction between the polar groups contained in the molecule, and the larger the value, the higher the value The greater the cohesiveness of the polymer chain. As the thermoplastic resin to be used, the weight average molecular weight increases, and as the concentration of the polar group in the molecule increases, the polymer chain cohesiveness increases, and the viscosity of the NMP solution tends to increase. By using the orbital plastic resin having a viscosity of the NMP solution within the above range, it is possible to highly combine the benign thermal fluidity including film formability and the adhesion at high temperature. If the weaving exceeds · thin == drop, and the polymer chain cohesiveness becomes large, the thermal fluidity in the obtained subsequent stage tends to decrease, and if the viscosity is small, white is formed by film formation. Crisp, as:::==: income _ agent two E type: upper == count two have: the company manufactures a speed of 5 rpm under the conditions of 25 quality I · m, turn to buy / 〇 tree month The value at which the component dissolved in the 201141980 liquid (varnish) was measured. When the weight average molecular weight and the viscosity of the NMp solution of the (A) thermoplastic resin exceed the upper limit of the above range, the inter-molecular interaction (intermolecular attraction) caused by the interlacing of the polymer chain and the molecular structure becomes large, so that The obtained adhesive layer is excellent in workability and physical properties (strength) at high temperatures, but the thermal fluidity at b = is lowered. On the other hand, when (4) the average molecular weight of the thermoplastic resin and the viscosity of the NMP solution are both lower than the lower limit of the above range, the entanglement of the polymer chain and the phase attraction between the molecular structures caused by the molecular structure become smaller, so (4) The thermal mobility is improved, and the self-supporting decline (in the direction of brittleness). Further, when the weight average molecular weight of the (A) thermoplastic resin to be used is less than the lower limit of the above range ' and the NMP &gt; viscosity of the liquid exceeds the upper limit of the above range, the polarity of the polymer becomes high, so that the obtained adhesive layer is The weight average molecular weight of the high-absorbent thermoplastic resin exceeds the above range: and) the greenness is less than the above-mentioned range, although the parent of the polymer chain is large, but the molecular structure causes intermolecular interactions (molecules) The mutual attraction is relatively weak, so the physical properties (strength) at a high temperature develops in a downward direction. (A) The thermoplastic resin is preferably soluble in dimercaptomethylamine, dimethoate, NMP, dimercaptopurine, diethylene glycol dimethylhydrazine, anthracene, phenyl, methyl Organic solvents such as ethyl ketone, decyl isobutyl ketone, tetrahydro π pentane, ethyl cellosolve, ethyl cellosolve acetate, butyl cellosolve, dioxane, cyclohexanone or ethyl acetate . (A) The thermoplastic resin is preferably a polyimide resin. Polyimide tree 15 201141980 Lipids may be used alone or in combination of two or more as needed. The upper yttrium imine resin is obtained by subjecting the bis-diamine to a condensation reaction by a usual method, for example, organic fluorination, to obtain an order of addition of each component, m: the following, preferably a thief-thief addition reaction , should be carried out, the anti-ship viscosity gradually field, the formation of the precursor as a precursor of the sylvestris. It can also be depolymerized by heating the generated poly-- at a temperature of 50C~8G °C, and * adjusting its molecules ^ can make Cheng Lin ride a wealthy _ shouted poly yam. The de-ring can be carried out by heating the __ring method or by chemically ring-closing the water-based agent. The composition ratio of tetra-di-diamine in the condensation reaction may also be Mohr's as needed, or may be 1 〇 with respect to tetra-denionic anhydride, and diamine = 0.5 _~2. 〇8 】The range of 〇_ is adjusted, and is proportional. When the amount of the diamine is more than 2 相对 with respect to the tetrakis dianhydride i Q _ , the amount of the amount of the material tends to be low. If it is relative to the gift of acid two Xuan! Further, when the amount is less than 0.5 mol, the amount of the polyimine oligomer having an acid end in the obtained polyimine resin tends to increase. In any case, the weight average molecular weight becomes low. The adhesive layer tends to have a decrease in resistance. Further, when the adhesive composition contains an epoxy group having an anti-ship with these terminals, as the amount of the above-mentioned polypyrene = polymer increases, the tendency of h having a decrease in storage stability of the adhesive composition particularly follows The amount of the imine oligomer at the amine end becomes large and becomes remarkable. 201141980 The tetrabasic acid dianhydride is preferably dried by heating at a temperature 10 lb C to 20 C lower than its melting point for 12 hours or more before the condensation reaction, or by recrystallization from acetic anhydride. The difference between the endothermic onset temperature and the endothermic peak temperature of the tetracarboxylic dianhydride by Differential Scanning Calorimeter (DSC) is preferably within 1 〇〇c. The value of this temperature difference can be used as an indicator of the purity of tetracarboxylic dianhydride. The endothermic start temperature and the endothermic peak temperature were measured using DSC (manufactured by Perkin Elmer Co., Ltd., DSC-7 type) at a sample amount of 5 mg, a temperature increase rate of 5 〇c/min, and a measurement atmosphere of nitrogen. value. The tetracarboxylic dianhydride used as a raw material of the polyimine resin is, for example, one or more selected from the group consisting of two needles of pyromellitic acid, 3, H4'_biphenyltetracarboxylic dianhydride, and 2, 2,3,3,-biphenyltetracarboxylic dianhydride, 2,2-bis(3,4-dicarboxyphenyl)propane dihepatic, 2,2-bis(2,3-dicarboxyphenyl) Propane dianhydride, u_bis(2,3-dicarboxyphenyl)ethane dianhydride, U-bis(3,4-dicarboxyphenyl)ethane dixanthine, bis(2,3-dicarboxyphenyl) Methane dianhydride, bis(3,4-dicarboxyphenyl)decane dianhydride, bis(3,4-dicarboxyphenyl)phosphoric dianhydride, 3,4,9,1 〇-flower tetracarboxylic acid monoanhydride , bis(3,4-dicarboxyphenyl)-dianhydride, benzene-1,2,3,4-tetracarboxylic dianhydride, 3,4,3',4'-dibenzophenone tetracarboxylic acid Anhydride, 2,3,2,,3,-dibenzophenone tetracarboxylic acid, two-needle, 3,3,3,,4,-dibenzophenone tetracarboxylic acid, di-hepatic, naphthalene tetracarboxylic dianhydride 1,4,5,8·naphthalenetetracarboxylic dianhydride, 2,3,6,7-naphthalene tetraphthalic acid dianhydride, i,2,4,5-naphthalenetetracarboxylic dianhydride, 2,6- Dichloronaphthalene-1,4,5,8-tetradecanoic acid dianhydride, 2,7-di-naphthalene-1,4,5,8-tetracarboxylic dianhydride, 2,3,6,7-tetragas Naphthalene-M,5,8-tetracarboxylic dianhydride: phenanthrene-1,8,9, 10-tetracarboxylic dianhydride, pyrazine-2,3,5,6-tetracarboxylic dianhydride, thiophene-2,3,5,6-tetracarboxylic dianhydride, 2,3,3,,4, -Liandu tetracarboxylic dianhydride, 3,4,3,,4,_ 17 201141980 Biphenyltetracarboxylic dianhydride, 2,3,2',3,-biphenyltetracarboxylic dianhydride, double (3 , 4_dicarboxyphenyl) dimethyl decane dianhydride, bis(3,4-dicarboxyphenyl)methylphenyl decane dianhydride, bis(3,4-disulfophenyl)diphenyl Burning dianhydride, 1,4_bis(3,4-dimethophenyl fluorenyl) phthalic anhydride, 1,3_bis(3,4-dicarboxyphenyl)-1,1, 3,3-tetradecyldicyclohexane dianhydride, p-phenylene bis(dehydrated trimellitic acid vinegar), ethyltetracarboxylic dianhydride, 1,2,3,4-butanetetracarboxylic acid Dianhydride, decalin-1,4,5,8-tetracarboxylic dianhydride, 4,8-dimercaptohexahydronaphthalene-1,2,5,6-tetra-retensive dianhydride, cyclopentane- i,2,3,4-tetrazoic acid dianhydride, η 比洛烧-2,3,4,5-tetra-restroxic dianhydride, 1,2,3,4-cyclobutane tetracarboxylic acid two needles, Double (Xi Bu _ double ring [2,2,1] Geng-2,3-di-acidic acid two-needle, double ring _[2,2,2]_Xin-7-diluted_2,3,5,6- Tetracarboxylic dianhydride, 2,2-bis(3,4·dicarboxyphenyl)propane dianhydride, 2,2_ bis [4-(3,4-two rebellion) Phenyl)phenyl]propane dianhydride, 2,2-bis(3,4·di-re-phenyl)hexafluoropropane dianhydride, 2,2-bis[4-(3,4-dicarboxybenzene) Phenyl]hexafluoropropane dianhydride, 4,4'-bis(3,4-dioxaphenoxy)diphenyl sulfide dianhydride, 1,4-bis(2-hydroxyhexafluoroisopropyl) Base) stupid (trimellitic anhydride), 1,3-bis(2-hydroxyhexafluoroisopropyl)benzene bis(trimellitic anhydride), 5-(2,5-dioxotetrahydrofuranyl)_3·decyl-3-3⁄4 Alkene-1,2-dicarboxylic dianhydride, tetrahydrofuran-2,3,4,5-tetracarboxylic acid two-needle, 4,4'-oxydiphthalic dianhydride, mw#-isopropylidene Diphenoxy) bis(phthalic acid dianhydride), 1,2-(extended ethyl) bis (dehydrated triacetate), 1,3-(trimethylene) bis (dehydration Acid ester), [4-(tetradecyl) bis(hydrogen trimellitate), ι,5·(pentamethylene) bis (dehydrated tribasic acid), 1,6-(six Yttrium) bis (dehydrated trimenic acid ester), 1/7_(seven-indenyl) bis (dehydrated trimellitate), 1,8-(octadecyl) bis (dehydrated trimenic acid) Vinegar), 1,9-(ninemethylene) bis (dehydrated stupid triacetate), &quot;〇_(decamethylene) 201141980 Double (dehydrated trimellitate), 1,12-(dodedecyl) bis (dehydrated trimellitic acid vinegar 1,16-(hexadecanoyl) bis(hydrogen trimellitate), 118_(octadecyl) bis (dehydrated trimellitate). Among these, 4,4,~oxydiphthalic acid dianhydride, and 4,4,-(4,4,- are preferable from the viewpoint of imparting more excellent moisture resistance reliability. Isopropyldiphenoxy)bis(phthalic acid dianhydride). Further, from the viewpoint of imparting more excellent heat fluidity, it is preferably 1,1 〇-(decainyl) bis(hydrogen trimellitate), 1,12-(dodedecylylene). ) bis (dehydrated trimellitate), 1,16-(hexamethylene) bis (dehydrated trimellitic acid vinegar) and 1,18 · (octadecyl) bis (dehydrated trimellitic acid) ester). The diamine used as a raw material for the polyimine resin is, for example, selected from the group consisting of o-phenylenediamine, m-phenylenediamine, p-phenylenediamine, 3,3,-diaminodiphenyl ether, and 3 , 4'-diaminodiphenyl ether, 4,4,-diaminodiphenyl ether, 3,3'-diaminodiphenylmethane, 3,4·diaminodiphenylanthracene Alkane, 4,4,-diaminodiphenylnonane, bis(4-amino-3,5-dianonylphenyl)methane, bis(4-amino-3,5-diisopropyl Phenyl)decane, 3,3'-diaminodiphenyldifluorodecane, 3,4,-diaminodiphenyldifluorodecane, 4,4'-diaminodiphenyldi Fluorodecane, 3,3,-diaminodiphenyl stone, 3,4'-diaminodiphenyl fluorene, 4,4'-diaminodiphenyl stone, 3,3 -amino group · A sulphur mystery, 3,4'-diaminodiphenylthiosali, 4,4'~diaminodiphenyl sulfide, 3,3'-diaminodiphenyl ketone, 3,4'- Diaminodiphenyl ketone, 4,4'-diaminodiphenyl ketone, 2,2-bis(3-aminophenyl)propane, 2,2'-(3,4'-diamino Diphenyl)propane, 2,2-bis(4-aminophenyl)propane, 2,2-bis(3-aminophenyl)hexafluoropropane, 2,2_(3,4'-diamino Diphenyl) Hexafluoropropane, 2,2-bis(4-aminophenyl)hexafluoropropane, 1,3-bis(3-aminophenoxy)benzene, 1,4-bis(3-aminophenoxy) Benzene, 1,4-bis(4-aminophenyloxy)benzene, 201141980 3,3'-(l,4-phenylphenylbis(1-mercaptoethylidene))diphenylamine, 3,4 '-(l,4-Extended phenylbis(1-indenylethylene))diphenylamine, 4,4·-(1,4-phenylphenylbis(1-indenylethylene))diphenylamine , 2,2-bis(4-(3-aminophenoxy)phenyl)propane, 2,2-bis(4-(3-aminophenoxy)phenyl)hexafluoropropane, 2,2 - bis(4-(4-aminophenyloxy)phenyl)hexafluoropropane, bis(4-(3-aminophenoxy)phenyl) sulfide, bis(4-(4-aminophenoxy) Phenyl) thioether, bis(4-(3-aminophenoxy)phenyl)sulfone, bis(4-(4-aminophenoxy)phenyl)sulfone, 3,3'-di An aromatic diamine such as hydroxy-4,4'-diaminobiphenyl or 3,5-diaminobenzoic acid; iota, 3-bis(aminomethyl)cyclohexane, 2,2-dual ( 4-aminophenoxyphenyl)propane, 4,7,10-trioxatridecane-1,13-diamine, 4,9-dioxan-1,12-diamine, 2 ,4-diamino-6-(diallylamino-) 1,3,5-triazine (alias: Ν, Ν·-diallyl melamine , vinyldiaminetriazine, anthracene, fluorene-bis(3-aminopropyl)-extended ethyldiamine, hydrazine, hydrazine-diaminopropyl-1,3-propanediamine, Ν,Ν'-Diaminopropyl-1,4-butylene diamine, Ν-(3-aminopropyl)1,3-propanediamine, methylimidopropylamine, laurel Imiamino bispropylamine, 1,4-(diaminopropyl)piperazine, in addition to Jeffamine D-230, Jeffamine D-400, Jeffamine D-2000, manufactured by Sun Engineering Chemicals Co., Ltd. Jeffamine D-4000, Jeffamine ED-600, Jeffamine ED-900, Jeffamine ED_2〇 (U, Jeffamine EDR-M8 'Polyetheramine D-230, polyetheramine D-400, polyetheramine D manufactured by BASF Corporation) An aliphatic diamine such as a polyoxyalkylene diamine such as 2000; further 1,2-diaminoethane, 1,3-diaminopropane, 1,4-diaminobutane, 1,5- Diaminopentane, 1,6-diaminohexane, 1,7-diaminoheptane, 1,8-diaminooctane, 1,9-diaminodecane, 1,1〇 - an aliphatic diamine such as diaminodecane, 1,11-diaminoundecane, 1,12-diaminododecane, 1,2-201141980 diaminocyclohexane; However, 1,1,3,3-tetradecyl-1,3-bis(4-aminophenyl)dioxane, 1,1,3,3-tetraphenoxy-1,3-double (4-Aminoethyl)dioxane, 1,1,3,3-tetraphenyl-1,3·•bis(2-aminoethyl)dioxane, 1,1,3, 3-tetraphenyl-1,3-bis(3-aminopropyl)doxazepine, l,l,3,3-tetradecyl-l,3-bis(2-aminoethyl) Dioxane, 1,1,3,3-tetradecyl-l,3-bis(3-aminopropyl)dioxane, l,l,3,3-tetradecyl-l,3 - bis(3-aminobutyl)dioxanone, 1,3-dimercapto-1,3-dimethoxyl_1,3-bis(4-aminobutyl)dioxane, 1,1,3,3,5,5-hexamethylene-1,5-bis(4-aminophenyl)trioxane, 1,1,5,5-tetraphenyl-3,3- Dimercapto-1,5-bis(3-aminopropyl)trioxane, 1,1,5,5·tetrakis-3,3-dimethoxy-1,5-bis (4 -aminobutyl)triposin, 1,1,5,5-tetraphenyl-3,3-dimethoxy-i,5-bis(5-aminopentyl)trioxane, 1,1,5,5-tetramethyl-3,3-dimethoxyindole bis(2-aminoethyl) trioxane, 1,1,5,5-tetradecyl_3,3_ Dioxyloxybis guanidinium butyl) Sanshi Xia Oxygen, 1,1,5,5-(tetra)yl_3,3_ The methoxy group is a double-triple-stone oxy-burning, like a hexamethylene bis(tetra) phenyl sulphate, 1,1,3,3,5,5-hexaethyl-i,5-bis ( 3. Aminopropyl) tris-oxane, U, 3,3,5,5-hexapropyl_U_bis(3.aminopropyl) trioxane and other diamines. These diamines may be used alone or in combination of two or more. In order to make the Tg of the polyimine resin less than i 〇〇〇 c = an aliphatic diamine such as a dialkyl diamine. This month, the aliphatic diamine II makes ^ total! The ratio is preferably from i mol% to 80 mol%, more preferably one mol%. If the fat peptide surname - late from the odds mol% ~ 6 〇 8 〇 % %, the Tg of the polyimine resin is too low, and the J piece is more than the self-supporting 21 201141980. Commercial products of the aliphatic diamine include, for example, Jeffamine D-230, Jeffamine D-400, Jeffamine D-2000, Jeffamine D-4000, Jeffamine ED-600, Jeffamine ED-900, manufactured by Sun Engineering Chemical Co., Ltd. Jeffamine ED-2001 or Jeffamine EDR-148, a polyoxyalkylene diamine such as polyetheramine D-230, polyetheramine D-400 or polyetheramine D-2000 manufactured by BASF Corporation. The weight average molecular weight of the polyimide resin is preferably from 1 15 to 150,000, more preferably from 20,000 to 80,000. By controlling the weight average molecular weight within these numerical ranges, the strength, flexibility and viscosity of the adhesive layer become better. Further, since proper heat fluidity can be obtained, it is possible to more sufficiently ensure good landfillability to the step of the surface of the adherend. When the weight average molecular weight of the polyimide resin is less than 10,000, the film formability of the adhesive composition is lowered, or the strength of the adhesive layer tends to be small. When the weight average molecular weight of the polyimide resin exceeds 150,000, the thermal fluidity gradually decreases, and the landfill property of the uneven surface of the adherend tends to decrease. By setting the Tg and the weight average molecular weight of the polyimide resin to the above range, not only the adhesion temperature of the adhesive layer to the adherend can be suppressed to be lower, but also the semiconductor element can be subsequently fixed to the support 樽. Heating temperature at the &amp; (sticking temperature). As a result, the increase in warpage of the semiconductor and the member can be more significantly suppressed. When the support member is an organic substrate, the moisture absorption of the moisture absorption of the organic substrate by the heating temperature at the time of the adhesion can be suppressed, and the foaming of the adhesive layer due to vaporization can be suppressed. louse

S 22 201141980 jB)熱硬化性成分是可藉由加熱而形敍聯結構， 使接著劑層硬化的成分。⑻熱硬化性成分包含（bi)具 有烯丙基或環氧基的反應性塑化劑、⑻）具有苯乙歸基 的化合物、及（B3)具有順丁烯二酸亞胺基的化合物。再 者，（B1)、（B2)、（B3)成分亦可不為各別的化合物。藉 此，可更純地断半導體元件組料的熱脑中的硬化 性、低逸氣性及高溫時的高彈性模數，可高度地兼具b階 段中的熱流動性與C階段中的高彈性。 (B1)具有歸丙基或環氧基的反應性塑化劑只要是豆 Ϊ稀丙基或環氧基且可降低所得的接著敝成物的B· =熱流動溫度的改質劑、或可降低熱時的溶融黏度的改 質劑危則並無特別限定，較佳為於1 atm下其自身的倾 ，以下’更佳為於常溫（25ΐ )為液狀。塑化 二1不僅為早體，亦可為低聚物絲合物形態。此時，就可 =予更向度的熱流動性的觀點而言f較佳為重量平均分子 以下。再者’反應性塑化劑亦可為含有烯丙基 與壤乳基兩者的化合物。 此種反應性塑化劑例如可列舉：二稀丙基雙酴A、二 =基雙龄A二縮水甘_或其縮聚物（烯丙基化雙盼八 一表虱醇的縮聚物）、雙烯丙基耐地醯亞胺、鄰苯二曱酸二 烯丙酿或鄰笨二甲酸二稀丙酯的預聚物、異 ^ ^烯丙基改性或含稀丙基的苯盼祕清漆、1，3-二烯 丙基-5'縮水甘油基異三聚氰_、 油基異三聚氰_、單官能_丙基縮水甘_了^甘八 23 201141980 型（或AD型、S型、F型）的縮水甘油、氫化雙紛a 型的縮水甘油醚、環氧乙烷加成物雙酚A型的縮水甘油 越、環氧丙烧加成物雙酚A型的縮水甘油醚、笨盼紛路清 漆Μ脂的縮水甘油鍵、二聚酸的縮水甘油鱗、三官能型（咬 四官能型）的縮水甘油胺等化合物、或含環氧基的液狀丙 ，酸系聚合物等。另外，於25。(：、i扣诅下為液狀的環氧 樹脂亦包括在此種反應性塑化劑中。該些反應性塑化劑可 單獨使用一種，或組合使用兩種以上。 該些反應性塑化劑中，就可更高度地兼具所得的接毫 劑組成物的B階段中的良好的熱流動性與c階段中的熱访 動抑制性的觀點而言，可較佳地使用在25t、i 液狀的二烯丙基雙酚A二縮水甘油醚、烯两基化雙酚A與 表氣醇的縮聚物、稀丙基改性或含稀丙基的苯⑽㈣ 漆、含環氧基的液狀㈣酸系聚合物。含環氧基的丙稀酿 系聚合物更料1^為_1(^下，重量平均分子量為1〇〇〇( 以下。S 22 201141980 jB) The thermosetting component is a component which can be shaped by heating to harden the adhesive layer. (8) The thermosetting component contains (b) a reactive plasticizer having an allyl group or an epoxy group, (8) a compound having a phenylethyl group, and (B3) a compound having a maleimide group. Further, the components (B1), (B2), and (B3) may not be individual compounds. Thereby, the hardening property in the thermal brain of the semiconductor component material, the low outgassing property, and the high elastic modulus at a high temperature can be more purely broken, and the thermal fluidity in the b phase and the thermal phase in the C phase can be highly combined. High elasticity. (B1) a reactive plasticizer having a propyl group or an epoxy group, as long as it is a cardiopropyl group or an epoxy group, and can reduce the B· = heat flow temperature of the obtained subsequent composition, or The modifier for reducing the melt viscosity at the time of heat is not particularly limited, but is preferably inclined at 1 atm, and more preferably 'liquid at room temperature (25 ΐ). Plasticization II 1 is not only an early body but also an oligomeric filament form. In this case, it is preferable that f is more than a weight average molecule from the viewpoint of more thermal fluidity. Further, the 'reactive plasticizer may be a compound containing both an allyl group and a loice base. Examples of such a reactive plasticizer include diisopropyl bisguanidine A, bis = genomic A dimethyl condensate or a polycondensate thereof (polycondensate of allylic bisuppenyl sterol), Prepolymer of bisallyl-resistant quinone imine, phthalic acid diallylate or di-propyl isopropyl phthalate, iso- or allyl-modified or propyl-containing benzene Varnish, 1,3-diallyl-5' glycidyl isomeric cyanide _, oil-based iso-cyanide _, monofunctional propyl propyl condensed _ _ ^ 甘 八 23 201141980 type (or AD type, S-type, F-type) glycidol, hydrogenated double-type glycidyl ether, ethylene oxide adduct bisphenol A-type glycidol, epoxidized adduct bisphenol A-type glycidol Ether, stupid condensed glycerin bond of varnish varnish, glycidyl scale of dimer acid, trifunctional (bite tetrafunctional) glycidylamine, or liquid epoxy containing epoxy group, acid system Polymers, etc. In addition, at 25. (:, the epoxy resin in which the liquid is in the form of a liquid is also included in such a reactive plasticizer. These reactive plasticizers may be used alone or in combination of two or more. The agent can be preferably used at a higher degree in terms of good thermal fluidity in the B-stage of the obtained composition of the agent and thermal inhibition in the c-stage. , i-diallyl bisphenol A diglycidyl ether, polycondensate of alkylated bisphenol A and surface alcohol, propyl modified or propyl-containing benzene (10) (four) lacquer, epoxy The liquid (tetra) acid polymer of the base. The epoxy group-containing propylene polymer is more preferably 1 _ (the lower weight average molecular weight is 1 〇〇〇 (below).

關於接著劑組成物中的（B1)具有烯丙基或環氧基 反應性塑化_含量，就3階段中的良好的熱流動性: 逸氣性與C 段巾㈣紐峨點*言，相對 A 塑性樹脂⑽質量份，較佳為1質量份〜聊質量份， 二為份〜5〇0質量份，進而佳為5質量份〜刚質 二S t、於1質量份，則有兼具上述特性的效果; ί的傾向超過觸質量份，則有加熱時的逸氣變多 成膜性及操作性逐漸下降的傾向。 、Regarding (B1) in the adhesive composition having an allyl or epoxy reactive plasticization content, good thermal fluidity in the three stages: outgassing and C-segment (four) Newton point * The amount of the A plastic resin (10) is preferably 1 part by mass to the mass part, and the second part is 〜5 〇 0 parts by mass, and more preferably 5 parts by mass to 2 parts by mass, and 1 part by mass. The effect of the above-described characteristics; when the tendency of ί exceeds the contact mass, the outgassing at the time of heating tends to increase the film forming property and the workability gradually. ,

S 24 201141980 (B2)具有本乙烯基的化合物例如可列舉：ι_第三丁 基Μ烯基苯、h甲基+乙烯基苯、辛基乙稀基^、 1，3,5-三曱基_2_乙烯基苯、4•乙稀基苯甲酸、4_乙稀基苯 胺、3-乙稀基苯胺、M_二甲基·2乙烯基苯、i甲氧基·^ 乙烯基苯、U曱氧基冬乙稀基苯、丨_甲氧基·4乙烯基苯、 1，3,5-二曱基_2_乙稀基苯、u乙氧基_4·乙稀基苯、丄硝基_3_ 乙稀基苯、2-甲氧基冰乙稀基笨紛、^乙稀基蔡、2_乙稀 基秦、4·乙稀基苯甲酸甲醋、2_乙烯基苯甲酸曱醋、卜甲 氧基甲氧基·4·乙絲苯、2_甲氧基冰乙烯基苯㈣甲醋、 =(乙烯基苯氧基)四氫.夫喃、W•乙氧基乙氧基)·4_乙稀基 本、對-第三丁氧基祕曱氧基_4_乙烯基笨、第三丁基二 曱氧基(4-乙烯基苯基)矽烷、4_乙烯基笨甲酸第三丁酯、 2-(4-乙稀基苯氧基)四氫_2H-t南、或側鏈上具有苯乙烯基 的丙烯酸系聚合物等。 (B2)具有|乙烯基的化合物亦可為下述通式⑴或 通式（II)所表㈣化合物。該些化合物可單獨使用一種 或組合使用兩種以上。 [化1]S 24 201141980 (B2) The compound having a vinyl group may, for example, be ι_t-butyldecenylbenzene, hmethyl+vinylbenzene, octylethylene^, 1,3,5-triazine Base 2_vinylbenzene, 4 ethyl benzoic acid, 4_ethylene aniline, 3-ethylene aniline, M dimethyl 2 vinyl benzene, i methoxy · ^ vinyl benzene , U 曱 ethoxylated ethylene benzene, 丨 methoxy methoxy 4 benzene, 1,3,5-diindenyl 2 ethyl benzene, u ethoxy _ 4 · ethyl benzene , 丄Nitro_3_ Ethyl benzene, 2-methoxy ethene, cumbersome, Ethyl choline, 2_Ethyl Qin, 4, Ethyl benzoic acid, vinegar, 2_vinyl Bismuth benzoate vinegar, methoxymethoxy methoxy-4 ethene benzene, 2 methoxy glacial vinyl benzene (tetra) methyl vinegar, = (vinyl phenoxy) tetrahydro ketone, W ethoxylate Ethyl ethoxy)·4_Ethyl basic, p-t-butoxy methoxy-4-4 vinyl, tert-butyl dimethoxy (4-vinylphenyl) decane, 4_ Vinyl benzoic acid tert-butyl ester, 2-(4-ethylene phenoxy)tetrahydro-2H-t south, or an acrylic polymer having a styryl group in a side chain. (B2) The compound having a |vinyl group may also be a compound of the following formula (1) or (4) of the formula (II). These compounds may be used alone or in combination of two or more. [Chemical 1]

式（I) t，尺1表示氫原子或甲基，R2表示_〇、_CH2 25 201141980 或下述通式（i)所表示的二價基，R3表示-〇-、-CH2-、-S-或下述通式所表示的二價基，R4&amp;R5分別獨立表示 氫原子、碳數1〜3的烧基或苯基’ k表示1〜8的整數，1 表示1〜3的整數。式（〇及式（11)中的R6及R7分別獨 立表示氫原子、碳數1〜5的直鏈狀烷基或笨基。 [化2] R6 R7Formula (I) t, ruler 1 represents a hydrogen atom or a methyl group, R2 represents _〇, _CH2 25 201141980 or a divalent group represented by the following formula (i), and R3 represents -〇-, -CH2-, -S Or a divalent group represented by the following formula: R4 &amp; R5 each independently represents a hydrogen atom, a decyl group having 1 to 3 carbon atoms, or a phenyl group, wherein k represents an integer of 1 to 8, and 1 represents an integer of 1 to 3. R6 and R7 in the formula (11) independently represent a hydrogen atom, a linear alkyl group having 1 to 5 carbon atoms, or a stupid group. [Chemical 2] R6 R7

0 R11-Q-R’ 終it&quot;⑻ 式（II)中’ R8表示氫原子或曱基，R9及Rio分別獨 立表示氫原子、碳數1〜5的直鏈狀烷基或苯基，RU表示 -0-、-CH2_或下述通式（iii)所表示的二價基，尺12表示_〇_、 -CH2-、-S-或下述通式（iv)所表示的二價基，Rn及rM 分別獨立表tf氫原子、碳數丨〜5的直鏈狀烧基或苯基，m 表不卜8的^數’n表示1〜3的整數。式（出）及式（iv) 中的R5及R分別獨立表示氫原子、碳數丨〜5的直鍵狀0 R11-Q-R'final it&quot;(8) In the formula (II), R8 represents a hydrogen atom or a fluorenyl group, and R9 and Rio each independently represent a hydrogen atom, a linear alkyl group having 1 to 5 carbon atoms or a phenyl group, RU Representing -2 -, -CH2_ or a divalent group represented by the following formula (iii), the rule 12 represents _〇_, -CH2-, -S- or a divalent form represented by the following formula (iv) The base, Rn and rM are each independently a tf hydrogen atom, a linear alkyl group having a carbon number of 丨5 or a phenyl group, and the number 'n of the number 8' represents an integer of 1 to 3. R5 and R in the formula (out) and formula (iv) each independently represent a hydrogen atom and a straight bond of carbon number 丨~5.

S 26 201141980 烧基或苯基。 [化4]S 26 201141980 Burnt or phenyl. [Chemical 4]

Z (iii) R16Jk (iV) I# 乙稀基的化合物較佳為具有兩個以上的 鍵、、、β於方香％上的乙烯基。該化合物例如可列舉：1 乙烯基苯、1，4-二乙稀基苯、&amp;異丙稀基苯、或下述通^ (III)所表示的化合物。式（111)中，Rl7表示芳香族= 低聚物鏈’ R18及R19分別獨立表示氫原子或曱基。 [化5]Z (iii) R16Jk (iV) I# The compound of the ethylene group is preferably a vinyl group having two or more bonds and β on the square. Examples of the compound include 1 vinylbenzene, 1,4-diethylbenzene, &amp; isopropylbenzene, or a compound represented by the following formula (III). In the formula (111), Rl7 represents an aromatic = oligomer chain. R18 and R19 each independently represent a hydrogen atom or a fluorenyl group. [Chemical 5]

式（ΙΠ)所表示的化合物例如可藉由具有氯烷基及笨 乙烯基的化合物與芳香族醚低聚物的反應來合成。芳香族 醚低聚物可列舉：低聚(2,6-二曱基伸苯基-1，4-醚）、低聚(2_ 曱基-6_乙基伸笨基-1，4-醚）、低聚(2,6-二乙基伸苯基-1，4-鍵）、低聚(2,6-二氣伸苯基义^醚）、低聚(2-氯-6-曱基伸笨 基-1，4-驗）、低聚(2_苯基伸苯基、低聚(2_甲基_6_正 丙基伸苯基·1，4_醚）、低聚(5-甲基伸苯基-1,3·醚）、或低聚 27 201141980 (伸苯基-i，3_醚)等。式（in)所表示的化合物例如可列舉： 下述通式（IV)所表示的2,2，，3,3，，5,51_六曱基聯苯_4,4，_二 醇.2,6_二曱基苯酚縮聚物與氣曱基苯乙烯的反應產物等。 該些化合物可單獨使用或組合使用多種。接著劑組成物較 佳為含有該些化合物中於側鏈上具有苯乙烯基的丙烯酸系 聚合物。藉由接著劑組成物含有於側鏈上具有苯乙烯基的 丙烯酸系聚合物，可更高度地賦予B階段中的低逸氣性、 半導體裝置組裝步驟中受到的熱歷程中的硬化性、高溫時 的高彈性化、耐濕性及高溫接著性。 [化6]The compound represented by the formula (ΙΠ) can be synthesized, for example, by a reaction of a compound having a chloroalkyl group and a vinyl group with an aromatic ether oligomer. Examples of the aromatic ether oligomer include oligomeric (2,6-dimercaptophenylene-1,4-ether), oligomeric (2-indolyl-6-ethylexyl-1,4-ether), Oligomeric (2,6-diethylphenylene-1,4-bond), oligomeric (2,6-dihydrophenylene ether), oligomeric (2-chloro-6-fluorenyl) -1,4-test), oligomeric (2-phenylphenyl), oligomeric (2-methyl-6-n-propylphenylene 1,4_ether), oligomeric (5-methylbenzene) a compound represented by the formula (in), for example, a compound represented by the following formula (IV): 2, 3, an ether), or an oligomerization 27 201141980 (phenylene-i, 3-ethyl ether). , 2,, 3, 3,, 5, 51_hexadecylbiphenyl_4,4,-diol. The reaction product of 2,6-dinonylphenol polycondensate with gas-based styrene, etc. The compound may be used singly or in combination of two or more. The adhesive composition preferably contains an acrylic polymer having a styryl group in the side chain in the compound, and the styrene group is contained in the side chain by the adhesive composition. Acrylic polymer can impart higher low outgassing in the B-stage and hardenability in the thermal history of the semiconductor device assembly step High elasticity, moisture resistance and high-temperature adhesive properties at high temperatures. [Formula 6]

式（IV)中，p及q分別獨立表示1〜％的整數。 關於接著劑組成物中所含的⑻）具有苯乙稀基的化 合物的量’就使B P諸中的低溫貼附性、低溫接著性及低 逸氣性、與半導倾裝步射受_麵程中的硬化 性、C階段中的尚溫時的高彈性、高溫接著性、耐熱性及 财濕性更尚度地並存的觀點而言，相對於（A)熱塑性樹 月曰100質里伤，較佳為1質量份〜5〇〇質量份，更佳為5 質量份〜200質量份’進而佳為5質量份〜刚質量份。若 该含量小於1 fj：份’财兼具上述特㈣效果變小的傾 向’若超過5GG質量份，财舰紐下降的傾向，或成 28 201141980 膜性及操作性逐漸下降的傾向。 上述（B3)具有順丁婦二醯亞胺基的化合物較佳為含 有兩個以上的順谓二醯亞胺基，更佳為選自下述通式 (v)所表示的雙順丁烯二醯亞胺化合物、及下述通式（VI) 所表示的酚醛清漆型順丁烯二醯亞胺化合物中的至少一 種。 [化7]In the formula (IV), p and q each independently represent an integer of 1 to %. Regarding the amount (8) of the compound having a styrene group contained in the adhesive composition, the low-temperature adhesion, low-temperature adhesion and low outgassing in the BP, and the semi-conductive dumping step are accepted. From the viewpoint of the hardenability in the surface, the high elasticity in the C-stage, the high-temperature adhesion, the heat resistance, and the richness of the moisture, it is relative to the (A) thermoplastic tree. The damage is preferably 1 part by mass to 5 parts by mass, more preferably 5 parts by mass to 200 parts by mass, and further preferably 5 parts by mass to just parts by mass. If the content is less than 1 fj: the amount of the above-mentioned special (four) effect becomes smaller, and if it exceeds 5 GG parts by mass, the tendency of the ship to fall is reduced, or the filminess and workability of 28 201141980 tend to decrease. The compound (B3) having a cis-butanediamine group preferably has two or more cis-diimine groups, more preferably a bis-butene group represented by the following formula (v). At least one of a diquinone imine compound and a novolac type maleimide compound represented by the following formula (VI). [Chemistry 7]

(V) [化8](V) [Chem. 8]

(VI) 者二 29 201141980 殘基，二F苯殘基，萘殘基，直鏈、分支 煙a， ==組合所構成的二價基。式㈤卜表示° =(喲所表示的二價基。就同樣的心而；:=) [化的9]_清漆型順丁缔二酿亞胺化合物亦較佳。(VI) 者二 29 201141980 Residue, di-F benzene residue, naphthalene residue, linear, branched smoke a, == combination of divalent groups. Formula (5) represents ° = (哟 represents the divalent group. For the same heart;: =) [Chemical 9] _ varnish-type cis-butanediamine compound is also preferred.

[化 10] CH$[化 10] CH$

(vi) 201141980(vi) 201141980

縣成:Γ含的⑽具有順丁婦二酿亞 胺基的化5物的夏，就成膜性、Β階段令的低 c ρ皆段巾的尚溫時的高彈性、高溫時的著;、 =觀點而言，相對於⑷熱塑性樹脂_質量份，= 份〜500質量份，更佳為5質量份 ：， 進^圭為5質量份〜應f量份。若該含量小於 ^ 提高效果變小的傾向，若超過獅^量 :下降氣變多的傾向’或成臈性及操作性逐 +硬化後的接著劑層的強度下降的傾向。（ 縣的化合物及⑽具有順丁烯二醯亞胺基的 。刀別可單獨使用—種或組合使用兩種以上。 ^ 了促進含有（Β2)具有苯乙雜的化合物及（Β3) 二-l!谓二醯亞絲的化合物的熱硬化性成分的由加轨 硬化’視需要亦可於接著劑組成物+含有有機過氧 接著片製作時的硬化抑制、及Β階段中的保存穩 7、觀點而言’較佳為使们分鐘半生期溫度為12(rc =上的有機過氧化物。關於接著劑組成物中所含的有機過 &quot;&quot;物的3量，就保存穩定性、低逸氣性、硬化性的觀點 31 201141980 而了，相對於（B3)具有順丁烯二醯亞胺基的化合物1〇〇 重量份，較佳為0.01重量份〜10重量份。 相對於（A)熱塑性樹脂100質量份’接著劑組成物 中，含的（B)熱硬化性成分的量較佳為j質量份〜5〇〇 質量份，更佳為5質量份〜勘f量份，進而佳為5質量 份〜120質量份。若該含量超過5〇〇質量份，則有加熱時 的逸氣變多，此外成膜性（祕）逐漸下降的傾向。若該 含量小於1質量份，财賦予B階段巾的熱流動性、以及 C階段中的耐熱性及高溫接著性的效果變小的傾向。 接著劑組成物中，為了進行⑻熱硬化性成分的硬 化除了上述有機過氧化物以外亦可含有硬化劑、及/或硬 化促進齊丨（觸媒）。視需要可併用硬化劑與硬化促進劑、或 觸媒與助觸媒。關於上述硬化劑、硬化促進劑、觸媒、助 觸媒及有機過氧化物的添加量以及是縣加，是於可確保 下文將述的理想的減動性、硬化性及硬化後的耐熱性的 範圍内判斷、調整。 (B)熱硬化性成分較佳為含有（B4)於25。〇、丨atm 下為固體狀的％氧樹脂作為上述熱硬化性樹脂。固體狀的 環氧樹脂與液錄的環氧樹脂相比較，有分子量相對較大 且B月b基數相對較多的傾向，故硬化後的交聯密度變高， 低溫貼附性及相焊性進—步提高。如上述的環氧樹脂更 佳為f分子内含有至少兩個環氧基，且於25t下為固體 狀就硬化11或硬化物特性的觀點而言，極佳為苯盼的縮 X甘油8½的％^氧跑旨。$外，特別是使用聚醢亞胺樹脂县成: (10) In summer, which has a chemical compound of cis-butanthine, and a low-c ρ in the film-forming property and the Β phase, the high elasticity at the temperature of the towel and the high temperature ;, = point of view, relative to (4) thermoplastic resin _ parts by mass, = parts to 500 parts by mass, more preferably 5 parts by mass:, 5 parts by mass to 5% by weight. If the content is less than ^, the effect of the increase is small, and if the amount of the lion is exceeded, the tendency to decrease the gas is increased, or the strength of the adhesive layer and the workability of the adhesive layer after curing are lowered. (The compound of the prefecture and (10) have a maleimide group. The knife may be used alone or in combination of two or more. ^ Promotes the compound containing (Β2) having phenethyl and (Β3) II- l! The thermosetting component of the compound of the bismuth sub-filament is added by the orbital hardening. If necessary, the curing of the adhesive composition + the organic peroxide-containing sheet can be suppressed, and the storage in the sputum stage is stable. In terms of opinion, it is preferable to make the minute half-life temperature to 12 (rc = upper organic peroxide. About the amount of organic &quot;&quot; contained in the adhesive composition, the stability is preserved. From the viewpoint of low outgassing property and hardenability 31 201141980, it is preferably 0.01 parts by weight to 10 parts by weight based on 1 part by weight of the compound having a maleimide group of (B3). (A) 100 parts by mass of the thermoplastic resin in the adhesive composition, the amount of the (B) thermosetting component is preferably from j parts by mass to 5 parts by mass, more preferably from 5 parts by mass to parts by weight. And further preferably 5 parts by mass to 120 parts by mass. If the content exceeds 5 parts by mass, there is When the amount of heat is increased, the film forming property (secret) gradually decreases. If the content is less than 1 part by mass, the thermal fluidity of the B-stage towel, and the heat resistance and high-temperature adhesion in the C-stage are provided. In the subsequent composition, in order to perform (8) curing of the thermosetting component, in addition to the organic peroxide, a curing agent may be contained, and/or a curing-promoting catalyst (catalyst) may be used. A hardening agent and a hardening accelerator, or a catalyst and a catalyst. The amount of the above-mentioned hardener, hardening accelerator, catalyst, co-catalyst, and organic peroxide is also added to the county. It is judged and adjusted within the range of the desired damper property, hardenability, and heat resistance after hardening. (B) The thermosetting component preferably contains (B4) at 25. 〇, 丨atm is a solid % oxygen The resin is used as the above-mentioned thermosetting resin. The solid epoxy resin tends to have a relatively large molecular weight and a relatively large number of B b bases in comparison with the epoxy resin of the liquid recording, so that the crosslinking density after curing becomes high. Low temperature adhesion and phase welding It is preferable that the epoxy resin as described above is preferably an epoxy resin having at least two epoxy groups in the molecule of m, and is hardened at a solid state of 25t or hardened at 25t. The X-glycerol 81⁄2% of the oxygen is used for oxygen. In particular, the use of polyimine resin

S 32 201141980 作為熱塑性樹脂時，藉由聚醯亞胺樹脂的低聚物末端基等 所含的酸或胺等的反應性基與環氧基之間的熱反應，交聯 密度相乘性地提高。交聯密度提高，藉此由組裝步驟中受 到的熱歷程所得的更高度的硬化性的賦予及高彈性模數化 的效果進一步提高，並且可獲得更高度的低溫貼附性及耐 回焊性。再者，相當於（B1)具有環氧基的反應性塑化劑 的化合物不包括在（B4)於25。(：、1 atm下為固體狀的環 氧樹脂中。此種環氧樹脂例如可列舉：雙驗A型（或ad 型、S型、F型）的縮水甘油醚、氫化雙盼a型的縮水甘 油醚、環氧乙烷加成物雙酚八型的縮水甘油醚、環氧丙烷 加成物雙酚A型的縮水甘油醚、苯酚酚醛清漆樹脂的縮水 甘/由謎甲紛紛醒清漆樹脂的縮水甘油峻、雙紛A紛經清 漆樹脂的縮水甘觸、雜脂義水甘㈣、二稀丙基^ 酚A二縮水甘油醚或其縮聚物、三苯酚曱烷型等三官能型 (或四官能型）的縮水甘_、二環戊二烯苯轉脂的縮 水甘油醚、二聚酸的縮水甘油醋、三官能型（或四官能型） 胺、或萘樹脂的縮水甘油胺等。該些環氧樹脂 早獨使用一種或組合使用兩種以上。 樹脂，為了防止電子遷移（eleetrcmi_n) 電路的腐钮，較佳為將作為雜質離子的驗 性氣等屬離子、㈣離子制是氣離子或水解 氣專降低至3〇〇ppm以下的高純度品。 =需要村於魏樹脂巾組合環__硬化劑而使 。硬化劑例如可列舉：酚系化合物、脂肪族胺、脂環族 33 201141980 胺、方香族多胺、聚醯胺、脂肪族酸軒、脂環族酸酐、芳 香私酸酐、二氰二醯胺、有機酸二醯肼、三氟化领胺錯合 物、咪唑類或三級胺等。該些中，較佳為酚系化合物，更 佳為分子中具有至少兩個酚性羥基的酚系化合物。此種化 合物例如可列舉.苯酴紛酿清漆樹脂、甲紛盼酿清漆樹脂、 第二丁基苯酚酚醛清漆樹脂、二環戊二烯尹酚酚醛清漆樹 脂、一裱戊二烯苯酚酚醛清漆樹脂、二甲苯改性苯酚酚醛 清漆樹脂、蔡_化合物、三苯_化合物、四苯紛義 清漆樹脂、雙# A _清_脂、聚_對乙烯絲麟脂、 或苯酿芳燒基樹脂等。該些令，較佳為數量平均分子量在 400〜譲的範圍内的化合物。藉由使用該些硬化劑於 半導體裝置組裝步驟的加熱時，可更高度地減少導導 或裝置等的污染的逸氣。再者，為了 魏系化合物的調配量以環氧』 的％氧自量與本驗糸化合物的〇Η當 0·95 Μ.05405 : 〇.95的方式進行調整。”里比成為 視需要亦可使用硬化促_。硬化 要 化性樹脂硬化則並無特別限制，例如可列舉硬 氰二醯胺衍生物、二驗二醯肼、三苯 二 苯基硼酸鹽、2-乙基冰甲基味 ：本= 二氮雜ί環[5.4.0]十一糾-四苯基硼酸醋等曰或W 接者劑組成物較佳為更含有（C)填料-組成物更含有(C)填料，特別可更高度地達:由，著劑 易切斷性、拾取時的自切晶帶的易剝離性、^切曰曰時的 34 201141980 另外，亦可有助於由組裝步驟中受到的熱歷程所得的彈性 模數提高、低吸濕性、回焊步驟中的破壞強度的提高。 填料例如可列舉：銀粉、金粉、銅粉、鎳粉等金屬填 料，氧化銘、風氧化銘、氫氧化鎂、碳酸舞、碳酸鎂、石夕 酸，、石夕酸鎂、氧化釣、氧化鎮、氧化紹、氮化銘、結晶 二氧化矽、非晶二氧化矽、氮化硼、二氧化鈦、玻璃、氧 化鐵、陶竞等非金屬無機填料；或碳、橡膠系填料等有機 填料等。不論麵.形狀等如何，可無特別限制地使用填料。 (c)填料可根據所需的功能而區分使用。例如，金 屬填料疋喊接著触成物提高導雜、熱料性、觸變 =2的=加’非金屬無機填料是以使接著劑層提高 j導性、低鋪脹性、低吸祕料目的而添加，有機 3是層提高動性等為目的而添加。該些金屬 使用而ϋ ·、、、機填料或有機填料可單獨使用—種或組合 &quot;以。δ亥些填料中，就提高半導體穿置用接荖# 料所需求的導電性、教似β y牛導以置用接者材 觀點而t 躲、絕緣性等的 埴料、非金屬無機填料或絕緣性的 的分散性良好r且中，就於樹脂清漆中 更佳為i娜真料或4:二真料者力提識點而言， 接著劑經成物中所含的r 的特性或魏科定。填料的量是根據要提高 脂、⑻熱硬化性成分;(接CT=成物的⑷熱塑性樹 離子敎狀其崎力,下讀㈣偶合劑、 ^的a计為基準，（c)填料的含量 35 201141980 =，1%〜40 v〇1% ’更佳為5 v〇1%〜3〇減進而 ，為5 VGl%〜2()v()1%。藉由適當增加（c)填料的量可 貫現接著絲面的録著化、及高彈性模數化，可進一步 性（利用切割刀的切斷性）、拾取性（與切晶帶的 打線接合性（超音波效率）、熱時的接著強度。 填料增加至必要量以上，則低溫貼附性、斑被 ，附體的界面接著性、及熱流動性相關的效果下降，可能 導致包括耐回焊性的可靠性下降n(c)填料的含量 較佳為控制於上述範_。為了取得所需求的特性的平 衡，較佳為決定最適的含量。使用（c)填料時的混合、 混練可將通常的機、擂潰機、讀等 散機適當la合來進行。 接著劑組成物中，為了改良不同種材料_界面結 合，可添加各種偶合劑。偶合劑例如可列舉矽烷系、鈦系 或紹系等’其t就效果高的方面而言，較佳為魏系參 劑。關於偶合_錢量’就其效果或耐触及成本的; 面而言，相對於熱塑性樹脂刚質量份，較佳為設定為〇〇1 質量份〜20質量份。 接著劑組成物中，為了吸附離子性雜質而改良吸濕時 的絕緣可靠性，亦可更添加軒捕_。此_子捕捉劑 並無特別限制，例如可列舉：三嗪硫醇化合物、雙酶系還 原劑等作為用以防止銅離子化而溶出的銅害抑制劑而已知 ，化合物、錯系、或銻㈣齡化合物等無機離子吸附劑 等。關於離子捕捉劑的使用量，就添加效果或耐熱性、成 36 201141980 本等的觀點而言，相對於熱塑性樹脂100質量份，較佳為 〇.〇1質量份〜ίο質量份。 又’ 接著劑組成物中’亦可適當添加軟化劑、抗老化劑、 著色劑、阻燃劑、萜烯系樹脂等增黏劑作為其 ，本實施形態的接著片例如可藉由以下方法 法）來製造··將使接著劑組成物溶解或分散於有機溶劑中 =清漆塗佈於基材上，將所塗佈的清漆加熱絲而形成接 著劑層。接著劑層形成後，亦可去除基材，亦可將基材直 接用作接著片的支持膜。加熱乾燥的條件只要是清漆申的 有機溶劑（溶劑）充分揮散的條件，則並無特別限制，通 常為50。〇〜20(TC、0.1分鐘〜90分鐘左右。再者， 加熱條件亦可分為兩階段以上。 用於形成接著劑層的清漆是藉由以下方法來 構成接著成物的上述各成分於錢溶财縣 要對混合物進行混練。用以製備清漆人3 而 機、擂潰機、三輥磨機、球磨分二Si 散則可^ = 二曱基，二 本曱基乙基酉同、曱基異丁基酮 纖劑、乙基溶纖劑乙酸酿、丁南、乙基溶 及乙酸乙s旨中。 τ“纖劑、二魏、環己酉同 用於形成接著劑層的基材（支持膜2)只要可承受上 37 201141980 述加^、錢條件舰無制限定。例如可使 聚丙烯膜、聚對笨-甲醅7 __ 时财也 曰联 ㈣眩、物笑 膜、聚醯亞胺膜、聚醚醯 亞膜认—甲酸酯膜、或曱基戊烯膜。該4b基材膜 亦可為將=種以上組合而成的多層膜，亦可為表 氧糸、-氧切轉的脫模劑等進行了處理的基材膜。 ΐ4是表示具備切晶片體式的接著片 的一貫施形態的剖面圖。圖4所示的接著片130為二4 基材膜7及設於基材膜上的黏著劑層6的切晶片5、^ =晶^的黏著劑層6上的膜狀的接著劑層1所構成的 ，層體。圖4所示的接著片兼具切晶片與黏晶膜兩者= 求的特性。圖4的接著片m中❹的基賴7通常盘上 述支持膜2相同。 〃 倾=接Ϊ片130的接著劑層1較佳為以近似於貼附 “者以曰的半導體晶圓的形狀而預先形成（預切割）。 黏^劑層6是由感壓型或放射線硬化型的黏著劑所形 6具有於切晶時半導體元件不飛散的充分的 黏者力’且具有於此後的半導體元件的拾取步驟中不損 半導體元件的程度的絲著力，可使用該料巾通常使用 的Ϊ著劑。例如，放射線硬化型的黏著劑於切晶時具有高 =力，於切晶後的拾取時藉由拾取前的放射線 黏著力下降。 、 亦可如圖5的接著片14〇般，代替使用具有黏著材層 的切:曰:片’而使用具有作為㈣ϋ的功能的基材膜7。圖5 的接著片⑽中使用的基材膜7可確保實施拉伸張力時的 38 201141980 例如可較佳地使用聚歸 伸長率（所謂「擴展」）。基材膜7 烴膜。 圖4及圖5所示的接著片13〇及14〇於切晶時作為切 晶片、於黏晶時作為黏晶膜而發揮功能。因此，可將該些 接著片的接著劑層1一邊加熱一邊層壓於半導體晶圓的背 面，切晶後，拾取貼附有接著劑層的狀態的半導體元件， 進行黏晶。 以上說明的本實施形態的接著劑組成物及接著片作為 將積體電路（Integrated Circuit，1C)、大規模積體電路 (Large Scale Integrated Circuit，LSI)等半導體元件與其 他被黏附體接著的半導體元件固定用接著劑、換言之即黏 晶用接著劑而極為有用。 接著半導體元件的被黏附體有·· 42合金引線框、銅弓丨 線框等引線框；聚醯亞胺樹脂、環氧樹脂等塑膠膜；使坡 璃不織布等基材含浸聚醯亞胺樹脂、環氧樹脂等塑膠並硬 化而成的物品；氧化鋁等陶瓷等的半導體元件搭載用支持 構件等。其中’接著片適合用作用以將於表面具備有機抗 雀虫層而成的有機基板、於表面具有配線的有機基板等於表 面具有凹凸的有機基板與半導體元件接著的黏晶用接著材 料。 本實施形態的接著劑組成物及接著片亦適合用作於將 多個半導體元件堆疊的構造的半導體裝置（Stacked-PKG) 中’用於將鄰接的半導體元件彼此接著的半導體元件固定 用接著劑。 39 201141980 繼而關於本實施形態的接著劑組成物的用途，使用 圖式對半導體元件的實施職加以具體·。再者，近年 來提出了^種構造的半導體裝置，本實施形態的接著劑組 成物及接著片的用途不限定於以下說明的構造的半導體裝 置。 x 圖6疋表不半導體裝置的—實施形態的示意剖面圖。 圖6所示的半導體裝置200具有以下構成：將半導體元件 9經由藉由上述接著触成物所形成的黏晶層（已硬化 接著劑層）8而接著於支持構件⑴，半導體元件9的連接 端子（未圖示）經由接4111而與外部連接端子（未圖 電性連接，進而藉由密封材12進行密封。 圖7是表示半導體裝置的其他實施形_示意 圖。圖7所示的半導體裝置21()具有以下構成：將第 的半導體元件9a經由藉由上述接著劑組成物所形成的點 晶層（已硬化的接著劑層）8而接著於形成有端子13的 持構件H)、’於半導體元件％上，經㈣由上述接著劑級 成物所形成的黏晶層（已硬化的接著劑層）8而接著半導 體元件9b，藉由密封材12將整體密封。半導體 半導體元件9b的連接端子（未圖示）分別 與外部連接舒電性連接。 ^ 圖6及圖7所示的半導體裝置（半導體封袭）可藉由 以下方式來製造：於半導體元件與支持構件、及/或上^半 導體元件彼此之間夾持膜狀的接著劑層，進行加熱壓 使兩者接著，其後經過打線接合步驟，視需要經過利用密 201141980 封材的密封步驟等步驟。上述加熱壓接步驟的加熱溫度通 常為20C〜250C ’負荷通常為0.01 kgf〜2〇kgf，加熱時 間通常為0.1秒鐘〜300秒鐘。 … [實例] 以下，示出本發明的實例來對本發明進行更具體說 明，但本發明不限定於該些實例，可於不偏離本發^月的技 術思想的範圍内進行各種變更。再者，表中的數值只要無 特別說明則是指質量基準（質量份广 '、'''' [聚醯亞胺樹脂（PI-1)的合成] 於安裝有溫度計、授拌機、冷凝管及氮氣流入管的300 mL·燒瓶中’加入1，3-雙(3-胺基丙基)四甲基二石夕氧燒（作 越化學工業股份有限公司製造，商品名：Lp_71〇〇) 15 53 g、聚氧伸丙基二胺（BASF股份有限公司製造，商品名： D400，分子量：450) 28.13 g、及 NMP 100_0 g 並進行攪 拌，製備反應液。於二胺溶解後，一邊將燒瓶於冰浴中冷 卻，一邊於反應液中少量地逐次添加預先藉由自乙酸軒的 再結晶而純化的4,4'·氧基二鄰苯二曱酸二酐32.30 g，於常 溫（25°C )下反應8小時後，添加二曱苯67.0 g，一邊吹 入氮氣一邊於180°C下加熱，藉此將二甲苯與水一起共沸 去除。將該反應液注入至大量的水中，藉由過濾而採集所 沈殿的樹脂，進行乾燥而獲得聚醯亞胺樹脂（PI-1)。利用 gpc對所得聚酿亞胺樹脂（pi-i)的分子量進行測定，結 果以聚米乙烯換算，數量平均分子量Μη=22400，重量平 均分子量Mw=70200。聚醯亞胺樹脂（ΡΙ-1)的Tg為45。〇 201141980 另外，以樹脂成分25質量％而溶解於NMP中的樹脂溶液 的25°C下的黏度為10泊。 [聚醯亞胺樹脂（ΡΙ·2)的合成] 於安裝有溫度計、攪拌機、冷凝管及氮氣流入管的3〇〇 mL燒瓶中，加入2,2-雙(4-胺基苯氧基苯基)丙烷13.68 g、 4,9-二氧雜癸烷_ι，ΐ2-二胺6.80 g、及NMP 165.8 g並進行 攪拌，製備反應液。於二胺溶解後，一邊將燒瓶於冰浴中 冷卻’一邊於反應液中少量地逐次添加預先藉由自乙酸酐 的再結晶而純化的十亞曱基雙偏苯三酸酯二酐34.80 g。於 常溫（25°C )下反應8小時後，添加二甲苯110.5 g，一邊 吹入氮氣一邊於18(TC下加熱，藉此將二曱苯與水共沸去 除。將其反應液注入至大量的水中，藉由過滤而採集所沈 澱的樹脂’進行乾燥而獲得聚醯亞胺樹脂（ΡΙ·2)。利用 GPC對所得聚醯亞胺樹脂（ΡΙ_2)的分子量進行測定，結 果以聚苯乙烯換算計，數量平均分子量Μη=28900 ’重量 平均分子量Mw==88600。聚醯亞胺樹脂（ΡΙ-2)的Tg為 67°C。另外’以樹脂成分25質量％溶解於NMP中的樹脂 溶液的25°C下的黏度為150泊。 [聚醯亞胺樹脂（PI-3)的合成] 於安裝有溫度計、攪拌機、冷凝管及氮氣流入管的3〇〇 mL燒瓶中、加入2,2-雙(4-胺基苯氧基苯基)丙烷27.30 g、 及NMP 248.4 g並進行授拌，製備反應液。於二胺溶解後， 一邊將燒瓶於冰浴中冷卻，一邊於反應液中少量地逐次添 加預先藉由自乙酸酐的再結晶而純化的十亞曱基雙偏苯三 42 201141980 酸酯二酐34.80 g。於常溫（25°C )下反應8小時後’添加 二曱苯165.6 g，一邊吹入氮氣一邊於i80°c下加熱、藉此 將一曱苯與水共沸去除。將其反應液注入至大量的水中’ 藉由過濾而採集所沈澱的樹脂，進行乾燥而獲得聚醯亞胺 樹脂（PI_3)。利用GPC對所得聚醯亞胺樹脂（PI-3)的分 子量進行測定，結果以聚苯乙烯換算計，數量平均分子量 Mn=23200 ’重量平均分子量Mw==894〇〇。聚醯亞胺樹脂 (PI-3)的Tg為120°C。另外，以樹脂成分25質量°/〇溶 解於NMP中的樹脂溶液的25°C下的黏度為205泊。 [聚酿亞胺樹脂（PI_4 )的合成] 於安裝有溫度計、攪拌機、冷凝管及氮氣流入管的3〇〇 mL燒瓶中，加入2,2-雙(4-胺基苯氧基苯基)丙烷27.30 g、 及NMP 248.4 g並進行攪拌，製備反應液。於二胺溶解後， 一邊將燒瓶於冰浴中冷卻，一邊於反應液中少量地逐次添 加預先藉由自乙酸酐的再結晶而純化的十亞曱基雙偏苯三 酸醋=肝34.80 g。於常温（25t )下反應8小時後，添加 二曱苯165.6g，一邊吹入氮氣，一邊於18〇它下以較上述 聚，亞胺樹脂（ΡΙ·3)的情形更長的時間反應，藉此將二 甲笨與水制去除。將其反應液注人至大量的水中，藉由 過渡'而採集所沈㈣樹I旨，進行乾燥喊得聚醯亞胺樹脂 (ΡΙ-4)。湘GPC對所得聚醯亞胺_ 的分子量 ^丁測定，結果以聚苯乙馳算計，數量平均分子量Μη 22800 ’重I平均分子量Mw=189600。聚酿亞胺樹脂 (PI-4)的Tg為120°C。另外，以樹脂成分25質量％溶 43 201141980 解於NMP中的樹脂溶液的25°C下的黏度為420泊。 [接著劑組成物（清漆）的製備] 使用上述所得的聚醯亞胺樹脂（Π-l)〜聚醯亞胺樹 脂（PI-4) ’以表1及表2所示的各實例及比較例的組成比 (單位：質量份）來調配各成分，獲得接著劑層形成用的 清漆。 再者’表1及表2中的各成分的記號是指下述物質。 &lt;聚醯亞胺樹脂以外的熱塑性樹脂&gt; 「PVB-1」：可樂麗股份有限公司製造，聚乙婦丁酸樹 脂（SB-45M ’ Tg ·· 76。(：，重量平均分子量：82000，以樹 脂成分25wt°/〇溶解於NMP中的樹脂溶液的25°C下的溶液 黏度：180泊） 「PVB-2」：Solutia股份有限公司製造，聚乙烯丁醛樹 脂（Butvar-72 ’ Tg : 75°C，重量平均分子量：210000，以 樹脂成分25wt%溶解於NMP中的樹脂溶液的25°C下的溶 液黏度：&gt;500泊） 「ZX-1395」：東都化成股份有限公司製造，苯氧樹脂 (Tg : 68°C，重量平均分子量：88000，以樹脂成分25wt0/。 溶解於NMP中的樹脂溶液的251下的溶液黏度：3泊） &lt;反應性塑化劑&gt; 「RE-810NM」：日本化藥股份有限公司製造，二烯丙 基雙酚A二縮水甘油醚（性狀：液狀） UG-4010」.東亞合成股份有限公司製造，含有環氧 基的無溶劑型液狀丙烯酸系聚合物（ARUF0N，Tg: -57。(：， 201141980 重量平均分子量：2900) 「MEH-8010」：明和化成股份有限公司製造，部分缔 丙基改性苯酚酚醛清漆樹脂（性狀：液狀） 「N730」：DIC股份有限公司製造，苯酚酚醛清漆型 液狀環氧樹脂（N-730-S) 「DA-MGIC」：四國化成工業股份有限公司製造，二 烯丙基單縮水甘油基異三聚氰酸（性狀··固體狀，溶點： 40°C ) ·〃 ’ &lt;具有苯乙烯基的化合物&gt; 「OPE-2St」：三菱瓦斯化學股份有限公司製造， 2’2 ,3,3，5,5 -六甲基聯苯-4,4'-二醇·2,6-二曱基苯盼縮聚物 與氣甲基苯乙烯的反應產物（數量平均分子量：12〇〇) 「Foret SCS」：综研化學股份有限公司製造，含有笨 乙稀基的丙烯酸系聚合物（Tg : 70。0，重量平均分子量： 15000) &lt;具有順丁烯二醯亞胺基的化合物&gt; 「BMI-1」：東京化成股份有限公司製造，4,4’-雙順丁 烯二醯亞胺二苯基曱烷 「BMI-2」：KI化成股份有限公司製造，2,2，-雙 順丁烯二醯亞胺苯氧基)苯基]丙烷（BMI-80) &lt;於25°C、1 atm下為固體狀的環氧樹脂&gt; 「ESCN-195」：住友化學股份有限公司製造，曱酚酚 駿清漆型固體狀環氧樹脂（環氧當量：200) &lt;環氧樹脂用硬化劑&gt; 45 201141980 ，「HP-850N」：日立化成股份有限公司製造，苯酚酚醛 /月漆树脂（OH當量：1〇6，性狀：固體狀） 〈％·氧樹脂用硬化促進劑&gt; 「TPPK」：東京化成股份有限公司製造，四苯基 苯基棚酸鹽 &lt;填料&gt; 「HP-P1」：水島合金鐵股份有限公司製造，氮化硼填 料 、 &lt;溶劑:&gt; 「NMP」：關東化學股份有限公司製造，N_曱基々 咯烷酮 匕 [接著片的製作] 々、將所得的清漆以乾燥後的膜厚成為40 μιη±5 μιη的方 式塗佈於各支持膜上。使㈣軸延伸聚丙烯（OTP)膜（厚 度為6〇 μΠ〇作為支持膜。將經塗佈的清漆於烘箱中於8(rc =口熱30分鐘，繼而於12〇t下加熱3〇分鐘，藉此進行 乾燥’獲得具有支持膜及形成於該支持膜上賴狀 劑層的接著片。 考 [薄膜形成性的評價] 、對於以上述條件所得的接著片，根據以下基準來評價 成膜性。於根據下述基準而成膜性的評價為A時，意味著 薄膜形成性優異。 &quot; A:膜狀的接著劑層於支持基材上不彈斥而可塗佈， 自所得的接著片可|彳離支持基材，且支持基材剝離後的接S 32 201141980 When the thermoplastic resin is used, the crosslink density is multiplied by the thermal reaction between the reactive group such as an acid or an amine contained in the oligomer terminal group of the polyimine resin or the epoxy group. improve. The crosslinking density is increased, whereby the effect of imparting more high hardenability and high elastic modulus obtained by the heat history received in the assembly step is further improved, and a higher degree of low-temperature adhesion and reflow resistance can be obtained. . Further, a compound corresponding to (B1) a reactive plasticizer having an epoxy group is not included in (B4) at 25. (:, at 1 atm, it is a solid epoxy resin. Examples of such an epoxy resin include a double-test A type (or an ad type, an S type, and an F type) glycidyl ether and a hydrogenated double a type. Glycidyl ether, ethylene oxide adduct diglycidyl ether of bisphenol eight type, propylene oxide adduct diglycidyl ether of bisphenol A type, shrinkage of phenol novolac resin / clarified resin by mystery The glycidyl sulphate, the double scented A varnish resin, the shrinking water touch, the hetero-lipid water (4), the di-propyl phenol phenol A diglycidyl ether or its polycondensate, trisphenol decane type and other trifunctional ( Or a tetrafunctional type of glycidol, a glycidyl ether of dicyclopentadiene phenyltransester, a glycidyl vinegar of a dimer acid, a trifunctional (or tetrafunctional) amine, or a glycidylamine of a naphthalene resin, etc. These epoxy resins may be used alone or in combination of two or more. Resin, in order to prevent the electron transfer (eleetrcmi_n) circuit from being rotted, it is preferable to use an ion such as an impurity gas as an impurity ion or a (tetra) ion system. The gas ion or the hydrolysis gas is reduced to a high purity product of 3 〇〇ppm or less. It is exemplified by a retanning agent, such as a phenolic compound, an aliphatic amine, an alicyclic 33 201141980 amine, a scented polyamine, a polyamine, an aliphatic acid scent. An alicyclic acid anhydride, an aromatic carboxylic acid anhydride, a dicyandiamide, an organic acid dioxime, a trifluoride amine complex, an imidazole or a tertiary amine. Among these, a phenol compound is preferred. More preferably, it is a phenolic compound having at least two phenolic hydroxyl groups in the molecule. Examples of such a compound include a benzoquinone varnish resin, a styrene varnish resin, a second butyl phenol novolak resin, and a dicyclopentylene. Diene phenolic novolac resin, pentadiene phenol novolak resin, xylene modified phenol novolak resin, Cai _ compound, triphenyl _ compound, tetraphenyl varnish resin, double # A _ Qing _ fat , poly-p-vinyl linoleum, or benzene-based aryl-based resin, etc.. These are preferably compounds having a number average molecular weight in the range of 400 to 。. By using these hardeners in the semiconductor device assembly step When heating, the guide can be reduced more highly Contamination of the device or the like. In addition, in order to adjust the amount of the Wei compound, the % oxygen amount of the epoxy compound and the 〇Η compound of the test compound are 0·95 Μ.05405 : 〇.95. Adjustment. "Ribi becomes hardening if necessary. There is no particular limitation on the hardening of the hardening resin. For example, hard cyanide derivatives, diazepam, and triphenyldiphenylboronic acid can be cited. Salt, 2-ethyl glacial methyl taste: this = diazepine ring [5.4.0] eleven correction - tetraphenylboronic acid vinegar or the like or the W agent composition preferably contains (C) filler - The composition further contains (C) filler, in particular, it can be more highly: from the easy cutting property of the agent, the easy peeling property of the self-cutting ribbon at the time of picking, and the time when the cutting is performed. It contributes to the improvement of the elastic modulus obtained by the heat history received in the assembly step, the low moisture absorption, and the improvement of the fracture strength in the reflow step. Examples of the filler include metal fillers such as silver powder, gold powder, copper powder, and nickel powder, Oxidation, Wind Oxidation, Magnesium Hydroxide, Carbonated Dance, Magnesium Carbonate, Oleic Acid, Magnesium Oxalate, Oxidation Fishing, Oxidation Town , non-metallic inorganic fillers such as oxidized Shao, nitriding, crystalline cerium oxide, amorphous cerium oxide, boron nitride, titanium dioxide, glass, iron oxide, Tao Jing; or organic fillers such as carbon and rubber fillers. The filler can be used without any limitation, regardless of the shape, shape, and the like. (c) Fillers can be used according to the desired function. For example, the metal filler screams and then the contact increases the miscibility, hot material, thixotropic = 2 = plus 'non-metallic inorganic filler is to improve the conductivity of the adhesive layer, low spread, low absorbing material It is added for the purpose, and the organic 3 is added for the purpose of improving the mobility of the layer and the like. These metals are used and the 填料, , , machine filler or organic filler can be used alone or in combination. Among the fillers of the δ hai, the conductivity required for the semiconductor splicing material is increased, and the conductive material is taught to be used as a β y ox lead to use the material of the material, and the non-metallic inorganic filler is used for hiding and insulating. Or the insulating dispersibility is good, and in the resin varnish, it is better to use the characteristics of r contained in the subsequent agent in the case of the resin varnish. Or Wei Keding. The amount of the filler is based on the grease to be cured, (8) the thermosetting component; (the CT is the product of (4) the thermoplastic tree ion, the kinematic force, the next reading (four) coupling agent, ^ is based on the calculation, (c) the filler Content 35 201141980 =, 1% ~ 40 v 〇 1% 'More preferably 5 v 〇 1% ~ 3 〇 minus further, 5 VGl% ~ 2 () v () 1%. By appropriate increase (c) filler The amount can be consistently followed by the recording of the silk surface and the high elastic modulus, and the furtherability (using the cutting property of the cutting blade) and the pick-up property (the wire bonding property with the dicing tape (ultrasonic efficiency), When the filler is increased to a necessary amount or more, the effects of low-temperature adhesion, plaque, interfacial adhesion of the attached body, and thermal fluidity are lowered, which may result in a decrease in reliability including reflow resistance. (c) The content of the filler is preferably controlled to the above-mentioned range. In order to obtain the balance of the required characteristics, it is preferred to determine the optimum content. Mixing and kneading using the (c) filler can cause the usual machine to collapse. The machine, the reading machine, etc. are properly combined. In the composition of the subsequent agent, in order to improve the different materials _ interface bonding, it can be added Various coupling agents are added. The coupling agent may, for example, be a decane type, a titanium type or a succinct type, etc., and the effect of the t is high, and it is preferably a ginseng ginseng agent. The effect or resistance to the coupling _ money amount is The cost is preferably set to 〇〇1 parts by mass to 20 parts by mass based on the mass part of the thermoplastic resin. In the subsequent composition, the insulation reliability at the time of moisture absorption is improved in order to adsorb ionic impurities. Further, the _ sub-trapping agent is not particularly limited, and examples thereof include a triazine thiol compound and a double-enzyme-based reducing agent, which are used as copper inhibitors for preventing copper ionization from eluting. It is known that an inorganic ion adsorbent such as a compound, a dysfunction, or a ruthenium (tetra) compound is used. The amount of the ion scavenger used is in terms of the effect of addition or heat resistance, and the mass of the thermoplastic resin is 100. The portion is preferably 〇.〇1 parts by mass to ίο parts by mass. Further, a softening agent, an anti-aging agent, a coloring agent, a flame retardant, a terpene-based resin or the like may be added as a 'substance composition'. As it is, this is The adhesive sheet of the embodiment can be produced, for example, by the following method: • The adhesive composition is dissolved or dispersed in an organic solvent = the varnish is applied to the substrate, and the applied varnish is heated to form a subsequent varnish. After the formation of the adhesive layer, the substrate may be removed, or the substrate may be directly used as a support film for the adhesive sheet. The conditions of the heat drying are as long as the organic solvent (solvent) of the varnish is sufficiently volatilized. There is no particular limitation, and it is usually 50. 〇~20 (TC, 0.1 minutes to 90 minutes or so. Further, the heating conditions may be divided into two or more stages. The varnish used to form the adhesive layer is constituted by the following method The above ingredients of the product are mixed in the Qianrong County. The varnish is used to prepare the varnish. The machine is used to crush the machine, the three-roll mill, and the ball mill is divided into two parts. Mercaptoethyl hydrazine, decyl isobutyl ketone fiber, ethyl cellosolve acetate, Dingnan, ethyl solution and acetic acid B. τ "fibrous agent, diwei, cyclohexanthene, the substrate used to form the adhesive layer (support film 2) as long as it can withstand the above-mentioned 37, 2011, 1980, and the condition of the ship is not limited. For example, polypropylene film, poly For the stupid - hyperthyroidism 7 __ when the money is also reelected (four) glare, laughter film, polyimide film, polyether phthalocyanine film, or decyl pentene film. The 4b substrate film also The multilayer film which is a combination of the above-mentioned types and the like may be a substrate film treated with an episulfoxide or an oxygen-cutting release agent, etc. ΐ4 is a consistent application of a continuous wafer having a wafer-cut type. A cross-sectional view of the form. The adhesive sheet 130 shown in Fig. 4 is a film shape of the two-substrate film 7 and the adhesive wafer 6 of the adhesive layer 6 provided on the base film, and the adhesive layer 6 of the crystal film. The layer of the adhesive layer 1 is composed of a layer. The sheet shown in Fig. 4 has both the characteristics of the cut wafer and the die film. The base 7 of the succeeding sheet m in Fig. 4 is usually supported by the above-mentioned support. The film 2 is the same. The tilting layer 1 of the adhesive sheet 130 is preferably formed in advance (pre-cut) in a shape similar to that of the semiconductor wafer to which the germanium is attached. The adhesive layer 6 is formed of a pressure-sensitive or radiation-curable adhesive, and has a sufficient adhesive force to prevent the semiconductor element from scattering during dicing, and does not damage the semiconductor during the pick-up step of the semiconductor element thereafter. The degree of silk force of the component can be used with the squeegee normally used for the towel. For example, the radiation-curing type adhesive has a high = force at the time of dicing, and the radiation adhesion force before pick-up is lowered at the time of picking after dicing. Alternatively, instead of using the cut sheet having the adhesive layer as in the case of the succeeding sheet 14 of Fig. 5, the base film 7 having the function of (d) ϋ may be used. The base film 7 used in the succeeding film (10) of Fig. 5 can secure the tensile tension 38 201141980. For example, the poly-elongation (so-called "expansion") can be preferably used. Substrate film 7 hydrocarbon film. The succeeding sheets 13A and 14'' shown in Figs. 4 and 5 function as a dicing wafer when dicing, and function as a viscous film at the time of die bonding. Therefore, the adhesive layer 1 of the subsequent sheets can be laminated on the back surface of the semiconductor wafer while being heated, and after dicing, the semiconductor element in a state in which the adhesive layer is attached is picked up and bonded. The adhesive composition and the adhesive sheet of the present embodiment described above are semiconductors in which a semiconductor element such as an integrated circuit (1C) or a large scale integrated circuit (LSI) is bonded to another adherend. The element fixing adhesive, in other words, the adhesive for the die bonding, is extremely useful. Next, the adhered body of the semiconductor element includes a lead frame such as a 42-electrode lead frame or a copper bow wire frame, a plastic film such as a polyimide resin or an epoxy resin, and a substrate such as a glass non-woven fabric impregnated with a polyimide resin. An article obtained by hardening a plastic such as an epoxy resin, or a support member for mounting a semiconductor element such as alumina or the like. The above-mentioned sheet is suitably used as an organic substrate on which an organic anti-scar layer is provided on the surface, and an organic substrate having wiring on the surface is equal to an organic substrate having irregularities on the surface and a subsequent bonding material for a semiconductor element. The adhesive composition and the adhesive sheet of the present embodiment are also suitably used as a semiconductor element fixing adhesive for connecting adjacent semiconductor elements to each other in a semiconductor device (Stacked-PKG) having a structure in which a plurality of semiconductor elements are stacked. . 39 201141980 Next, regarding the use of the adhesive composition of the present embodiment, the implementation of the semiconductor element will be specifically described using the drawings. Further, in recent years, a semiconductor device having a structure has been proposed, and the use of the adhesive composition and the adhesive sheet of the present embodiment is not limited to the semiconductor device having the structure described below. x Fig. 6 is a schematic cross-sectional view showing an embodiment of a semiconductor device. The semiconductor device 200 shown in FIG. 6 has a configuration in which a semiconductor element 9 is connected to a support member (1) via a die bond layer (hardened adhesive layer) 8 formed by the above-described succeeding contact, and a connection of the semiconductor element 9 is performed. The terminal (not shown) is connected to the external connection terminal via the connection 4111 (not electrically connected, and is sealed by the sealing member 12. Fig. 7 is a view showing another embodiment of the semiconductor device. The semiconductor device shown in Fig. 7 21() has a configuration in which the first semiconductor element 9a is followed by a crystal layer (cured adhesive layer) 8 formed by the above-described adhesive composition, followed by a holding member H), which is formed with the terminal 13. On the semiconductor element%, the (4) the adhesive layer (cured adhesive layer) 8 formed of the above-mentioned adhesive grade product is followed by the semiconductor element 9b, and the whole is sealed by the sealing member 12. The connection terminals (not shown) of the semiconductor semiconductor element 9b are electrically connected to the external connection, respectively. The semiconductor device (semiconductor encapsulation) shown in FIGS. 6 and 7 can be manufactured by sandwiching a film-like adhesive layer between the semiconductor element and the supporting member, and/or the upper semiconductor element. The heating is performed to cause the two to be followed, and thereafter, the wire bonding step is carried out, and the sealing step using the sealing material of the 201141980 is passed as needed. The heating temperature in the above-mentioned heating and crimping step is usually 20 C to 250 C'. The load is usually 0.01 kgf to 2 〇 kgf, and the heating time is usually 0.1 second to 300 seconds. [Examples] The present invention is not limited by the examples of the present invention, but the present invention is not limited to the examples, and various modifications can be made without departing from the spirit of the present invention. In addition, the numerical values in the table refer to the mass basis (mass portion is wide, '''' [synthesis of polyimine resin (PI-1)] unless otherwise specified, and the thermometer, the mixer, and the condensation are installed. In a 300 mL·flask of a tube and a nitrogen inflow tube, 'addition of 1,3-bis(3-aminopropyl)tetramethyldiazepine (made by Yue Chemical Industry Co., Ltd., trade name: Lp_71〇〇) 15 53 g, polyoxypropylene propylene diamine (manufactured by BASF Corporation, trade name: D400, molecular weight: 450) 28.13 g, and NMP 100_0 g were stirred to prepare a reaction solution. After the diamine was dissolved, one side was dissolved. The flask was cooled in an ice bath, and 32.30 g of 4,4'-oxydiphthalic acid dianhydride previously purified by recrystallization from acetic acid was added in small portions to the reaction liquid at room temperature (at room temperature ( After reacting for 8 hours at 25 ° C), 67.0 g of diphenylbenzene was added, and the mixture was heated at 180 ° C while blowing nitrogen gas, thereby azeotropically removing xylene with water. The reaction solution was poured into a large amount of water. The resin of the hall was collected by filtration and dried to obtain a polyimide resin (PI-1). The molecular weight of the obtained polyanilin resin (pi-i) was measured by gpc, and the number average molecular weight Μη=22400 and the weight average molecular weight Mw=70200 in terms of polytetraethylene. Polyimine resin (ΡΙ-1) In addition, the resin solution dissolved in NMP with a resin component of 25% by mass has a viscosity of 10 poise at 25 ° C. [Synthesis of polyimine resin (ΡΙ·2)] In a 3〇〇mL flask equipped with a thermometer, a stirrer, a condenser and a nitrogen inflow tube, 2,2-bis(4-aminophenoxyphenyl)propane 13.68 g, 4,9-dioxane was added. ι,ΐ2-diamine 6.80 g, and NMP 165.8 g were stirred to prepare a reaction solution. After the diamine was dissolved, the flask was cooled in an ice bath while adding a small amount in the reaction solution in advance. 34.80 g of decamuthyltrimellitic phthalate dianhydride purified by recrystallization of an acid anhydride. After reacting at room temperature (25 ° C) for 8 hours, 110.5 g of xylene was added while blowing nitrogen gas at 18 (TC). Heating down, thereby azeotrope removal of diphenylbenzene with water. Injecting the reaction solution into a large amount of water by The precipitated resin was collected by filtration and dried to obtain a polyimine resin (ΡΙ·2). The molecular weight of the obtained polyimine resin (ΡΙ_2) was measured by GPC, and the results were averaged in terms of polystyrene. The molecular weight Μη=28900' weight average molecular weight Mw==88600. The Tg of the polyimine resin (ΡΙ-2) was 67° C. In addition, the resin solution dissolved in NMP at a resin content of 25% by mass was at 25 ° C. The viscosity is 150 poise. [Synthesis of Polyimide Resin (PI-3)] In a 3〇〇mL flask equipped with a thermometer, a stirrer, a condenser, and a nitrogen inflow tube, 2,2-bis(4-aminophenoxybenzene) was added. The reaction liquid was prepared by mixing 27.30 g of propane and 248.4 g of NMP. After the diamine was dissolved, the flask was cooled in an ice bath, and a small amount of deuterated dipyridylbenzene 42 201141980 acid dianhydride purified in advance by recrystallization from acetic anhydride was added in small portions to the reaction liquid. 34.80 g. After reacting at room temperature (25 ° C) for 8 hours, 165.6 g of diphenylbenzene was added, and while heating at i80 ° C while blowing nitrogen gas, a benzene was azeotropically removed with water. The reaction solution was poured into a large amount of water. The precipitated resin was collected by filtration and dried to obtain a polyimide resin (PI_3). The molecular weight of the obtained polyimine resin (PI-3) was measured by GPC, and the number average molecular weight Mn = 23,200 Å by weight average molecular weight Mw = = 894 Å in terms of polystyrene. The polyimine resin (PI-3) had a Tg of 120 °C. Further, the viscosity at 25 ° C of the resin solution dissolved in NMP at a resin component of 25 ° C / 〇 was 205 poise. [Synthesis of Polyanilin Resin (PI_4)] In a 3〇〇mL flask equipped with a thermometer, a stirrer, a condenser, and a nitrogen inflow tube, 2,2-bis(4-aminophenoxyphenyl) was added. The reaction liquid was prepared by stirring 27.30 g of propane and 248.4 g of NMP. After the diamine was dissolved, the flask was cooled in an ice bath, and a small amount of decamuthyl trimellitic acid vinegar purified by recrystallization from acetic anhydride was added to the reaction solution in a small amount. . After reacting at room temperature (25t) for 8 hours, 165.6 g of diphenylbenzene was added, and while blowing nitrogen gas, it reacted under 18 Torr for a longer period of time than the above-mentioned polyamine resin (ΡΙ·3). Thereby, the dimethyl benzene is removed from the water. The reaction solution was injected into a large amount of water, and the sinking (four) tree I was collected by the transition, and the polyimine resin (ΡΙ-4) was dried and shouted. Hunan GPC measured the molecular weight of the obtained polyamidene _, and the number average molecular weight Μη 22800 '重I average molecular weight Mw=189600 was calculated by polystyrene. The polystyrene resin (PI-4) had a Tg of 120 °C. Further, the viscosity at 25 ° C of the resin solution dissolved in NMP was 420 poise by dissolving the resin component at 25 mass%. [Preparation of adhesive composition (varnish)] Each of the examples and comparisons shown in Table 1 and Table 2 was used using the polyimine resin (Π-1)~polyimine resin (PI-4)' obtained above. In the composition ratio (unit: parts by mass) of the examples, the components were blended to obtain a varnish for forming an adhesive layer. Further, the symbols of the respective components in Tables 1 and 2 refer to the following. &lt;Thermoplastic resin other than the polyimine resin&gt; "PVB-1": manufactured by Kuraray Co., Ltd., polyacetate butyric acid resin (SB-45M 'Tg · · 76. (:, weight average molecular weight: 82,000 , solution viscosity at 25 ° C of a resin solution dissolved in NMP with a resin component of 25 wt ° / :: 180 poise) "PVB-2": manufactured by Solutia Co., Ltd., polyvinyl butyral resin (Butvar-72 ' Tg : 75 ° C, weight average molecular weight: 210000, solution viscosity at 25 ° C of a resin solution dissolved in NMP with a resin component of 25 wt%: &gt;500 poise) "ZX-1395": manufactured by Dongdu Chemical Co., Ltd. Phenoxy resin (Tg: 68 ° C, weight average molecular weight: 88,000, resin composition 25 wt 0 /. Solution viscosity at 251 of resin solution dissolved in NMP: 3 poise) &lt;Reactive plasticizer &gt; "RE -810NM": Made from Nippon Kayaku Co., Ltd., diallyl bisphenol A diglycidyl ether (trait: liquid) UG-4010". Made of East Asia Synthetic Co., Ltd., solvent-free liquid containing epoxy group Acrylic polymer (ARUF0N, Tg: -57. (:, 20 1141980 Weight average molecular weight: 2900) "MEH-8010": Made by Minghe Chemical Co., Ltd., part of propylene modified phenol novolak resin (Property: liquid) "N730": DIC Co., Ltd., phenol novolak type Liquid epoxy resin (N-730-S) "DA-MGIC": manufactured by Shikoku Chemical Industry Co., Ltd., diallyl monoglycidyl isocyanuric acid (characteristics, solids, melting point: 40 ° C ) · 〃 ' &lt; styrene-based compound &gt; "OPE-2 St": manufactured by Mitsubishi Gas Chemical Co., Ltd., 2'2,3,3,5,5-hexamethylbiphenyl-4 , reaction product of 4'-diol·2,6-dimercaptobenzene expectorate and gas methyl styrene (quantitative average molecular weight: 12 〇〇) "Foret SCS": manufactured by Synthetic Chemical Co., Ltd. Acrylic-based acrylic polymer (Tg: 70. 0, weight average molecular weight: 15,000) &lt;compound having a maleimide group&gt; "BMI-1": manufactured by Tokyo Chemical Industry Co., Ltd. 4,4'-bis-m-butylene diimide diphenyl decane "BMI-2": KI Huacheng shares have Manufactured by the company, 2,2,-biss-disuccinimide phenoxy)phenyl]propane (BMI-80) &lt;Epoxy resin at 25 ° C, 1 atm solids &gt; "ESCN -195": manufactured by Sumitomo Chemical Co., Ltd., phenolic phenol varnish-type solid epoxy resin (epoxy equivalent: 200) &lt;hardener for epoxy resin&gt; 45 201141980 , "HP-850N": Hitachi Chemical Co., Ltd. Manufactured by the company, phenol phenolic/moon paint resin (OH equivalent: 1〇6, trait: solid) <%·hardening accelerator for oxygen resin> “TPPK”: manufactured by Tokyo Chemical Industry Co., Ltd., tetraphenylbenzene Base acid salt &lt;filler&gt; "HP-P1": manufactured by Mizushima Alloy Iron Co., Ltd., boron nitride filler, &lt;solvent: &gt; "NMP": manufactured by Kanto Chemical Co., Ltd., N_曱基々 Pyrrolidone oxime [Production of a sheet] The varnish obtained was applied to each of the support films so that the film thickness after drying was 40 μm ± 5 μm. Make a (four) axially stretched polypropylene (OTP) film (thickness of 6 μμμ as a support film. Apply the coated varnish to an oven at 8 (rc = mouth heat for 30 minutes, then heat at 12 °t for 3 minutes) By drying, the support sheet having the support film and the release layer formed on the support film was obtained. [Evaluation of film formation property], and the film obtained under the above conditions was evaluated for film formation based on the following criteria. When the evaluation of the film formation property is A according to the following criteria, it means that the film formability is excellent. "A: The film-form adhesive layer can be applied without being repellent on the support substrate, and the obtained film is obtained. The film can then be removed from the support substrate and supported after the substrate is peeled off.

S 46 201141980 著劑層並無破裂 / ύ;叉待基材上有膜狀的接著劑 得的接著片缝支持基材時，接㈣ $ ’ ^ [低溫貼附性的評價] $生破裂（較脆） 自實例及比較例巾獲得的各接著片 mm、長度為40 mm的試驗片。將又’ a上的放曰pi Γ夺式驗片於載置於支持 :巧石夕日日0 (6# ’厚度為_μπ〇的背面（與支持 台相反側的一面）以接著劑；忐么 (溫度為 _，線•為 4 kgf/cm， 搬送速度為0.5 m/min)進行加壓的方法來進行。 對於如此而準備的樣品，使用流變儀（股丁份有限公司 東洋精機製作所製造，「StrographE_s」（商品名））於常溫 下進行9，離試驗，測定接著劑層_碎晶關的剝離強 度。根據測定結果，由以下基準來評價低溫貼附性。 A :剝離強度為2N/cm以上 C :剝離強度小於2N/cm [流動量的測定] 將各實例及各比較例中獲得的於厚度為6〇 μιη的〇pp 基材上以40 μιη的厚度形成有Β階段狀態的膜狀的接著劑 層的接著片切斷成10 mmxlO mm尺寸，作為試驗片。將 該試驗片夾持於2片載玻片（松浪硝子工業股份有限公司 製造 ’ 76 mm&gt;&lt;26 mmxl.O mm〜1.2 mm 厚）之間，於 i2〇°c 的熱盤上一邊對整體施加1〇〇 kgf/cm2的負荷一邊加熱壓 接15秒鐘。分別用光學顯微鏡測量加熱壓接後的自上述 201141980 OPP基材四邊的膜狀接著劑的滲出量，將該些量的平均值 作為流動量。再者，所謂B階段，是指將接著劑層形成用 清漆塗佈於OPP基材上後，於烘箱中以80它下3〇分鐘、 繼而120°c下30分鐘的條件加熱後的狀態。該流動量的值 越大，則B階段中的熱流動性越優異，對被黏附體表面的 凹凸的填充性（填埋性）越優異。 、 [260°C剝離強度的測定] 使實例及比較例中獲得的各接著片的接著劑層（5 mmx5 mmx40 μιη厚）介於42合金引線框與具有突起部的 矽晶片（5ηπηχ5ππηχ400 μιη厚）之間，於該狀態下加熱 壓接。加熱溫度於實例1〜實例5、實例7、比較例1〜= 較例3、及比較例6中設定為15〇。〇，於實例6及比較例4、 比較例5中設定為18(rc。加壓是在負荷為i kgf/chip、時 間為5秒鐘的條件下進行。加熱壓接後，於供箱中於15〇。〇 下加熱1小時，或於180°C下加熱5小時而使接著劑層硬 化’獲得作為剝離強度測定用的樣品的積層體。 使用圖8所示的接著力評價裝置來測定26〇〇c剝離強 度。圖8所示的接著力評價裝置300具有熱盤36及推拉盒 31。於安裝於推拉盒31的桿的頂端，以於支點33的周圍 可改變角度的方式而設有掛手32。 於經加熱至260T：的熱盤36上，將經由已硬化的接著 劑層8使矽晶圓9與42合金引線框35接著而成的積層體 以42合金引線框35成為熱盤36側的朝向而載置，將樣品 加熱20秒鐘。繼而，於使掛手32勾住石夕晶圓9的突起部S 46 201141980 The coating layer is not cracked/ύ; when the substrate is supported by a film-like adhesive on the substrate, the joint is supported by the substrate. (4) $ ' ^ [Evaluation of low temperature adhesion] Brittleness) Test pieces of length 40 mm and length 40 mm obtained from the examples and comparative examples. The pi-capture test piece on the 'a' is placed on the support: Qiao Shi Xi Ri 0 (6# 'the thickness of the back side of _μπ〇 (the side opposite the support side) as an adhesive; (The temperature is _, the line is 4 kgf/cm, and the conveying speed is 0.5 m/min). The sample is prepared by using a rheometer (Dongyang Seiki Co., Ltd.) In the production, "Strograph E_s" (trade name) was subjected to a test at room temperature, and the peel strength of the adhesive layer was measured. From the measurement results, the low-temperature adhesion was evaluated by the following criteria: A: Peel strength was 2 N/cm or more C: Peeling strength is less than 2 N/cm [Measurement of flow amount] The 〇pp substrate having a thickness of 6 μm was obtained on each of the examples and the comparative examples, and a Β stage state was formed with a thickness of 40 μm. The film of the film-like adhesive layer was cut into a size of 10 mm×10 mm to serve as a test piece. The test piece was clamped to two slides (Manufactured by Songlang Glass Industrial Co., Ltd. '76 mm> &lt; 26 mmxl Between .O mm and 1.2 mm thick) on the hot plate of i2〇°c The pressure was applied to the whole body by a load of 1 〇〇kgf/cm 2 for 15 seconds, and the amount of exudation of the film-like adhesive from the four sides of the 201141980 OPP substrate after the heat-pressing was measured by an optical microscope. The average value is taken as the flow amount. In addition, the B-stage means that after applying the varnish for forming an adhesive layer on the OPP substrate, it is dried at 80 for 3 minutes in the oven, followed by 30 minutes at 120 ° C. The state after the condition is heated. The larger the value of the flow amount, the more excellent the thermal fluidity in the B-stage, and the more excellent the filling property (filling property) of the unevenness on the surface of the adherend. [260 ° C peeling Measurement of strength] The adhesive layer (5 mm x 5 mm x 40 μm thick) of each of the succeeding sheets obtained in the examples and the comparative examples was interposed between the 42 alloy lead frame and the tantalum wafer (5ηπηχ5ππηχ400 μηη thick) having the protrusions, in this state The heating temperature was set to 15 Torr in Examples 1 to 5, Example 7, Comparative Example 1 to = Comparative Example 3, and Comparative Example 6. In Example 6, Comparative Example 4, and Comparative Example 5 Set to 18 (rc. Pressurization is at load i kgf/ch Ip, the time was 5 seconds. After heating and crimping, it was placed in a box at 15 Torr. The enamel was heated for 1 hour, or heated at 180 ° C for 5 hours to harden the adhesive layer. The laminate of the sample for strength measurement measures the 26 〇〇c peel strength using the adhesion force evaluation device shown in Fig. 8. The adhesion force evaluation device 300 shown in Fig. 8 has a hot plate 36 and a push-pull box 31. The top end of the rod of the push-pull box 31 is provided with a hanging hand 32 in such a manner that the angle around the fulcrum 33 can be changed. On the hot plate 36 heated to 260T:, the laminate in which the tantalum wafer 9 and the 42 alloy lead frame 35 are bonded via the cured adhesive layer 8 is formed on the hot plate 36 side by the 42 alloy lead frame 35. The sample was placed in the orientation and the sample was heated for 20 seconds. Then, the hanging hand 32 is hooked on the protrusion of the Shi Xi wafer 9

S 48 201141980 下使掛手32以G.5 mm/s以與樣品的主面平行的 »而移動，彻推拉盒31測定此時 庫 父Γ収的剝離應力作為载剝離強度。 SKI焊性越優異’越可高度_^ 於150 C等更低溫的加熱條件下獲得的檨 ，剝_度大’意味著打線接合料組裝步驟== 熱歷程t的硬化性優異^ 、 。將於上述條件下經加熱壓接的樣品於烘箱中以 l8〇C、5小時的條件將接著劑層加熱硬化，其後，於饥、 85%RH雜溫恆濕射放置4M、.使用實施了該吸渴 彻與上勒同的方法㈣定吸濕後的 由表1及表2所示的結果明顯可確認，實例的接著劑 組成物的低溫貼附性優異，且加熱硬化後及吸濕後的 260°C剝離強度足夠高。 [儲存彈性模數的測定] 將，著劑層形成用清漆塗佈於OPP基材上後，於烘箱 中以80C下30分鐘、繼* 12〇。〇下3〇分鐘的條件進行加 熱後’將OPP|材剝離而獲得膜狀的接著劑層。將所得的 膜狀的。接著綱祕於2 &gt;{邊框狀鐵框架之間，於烘箱中 以180 C 5小時的條件將接著劑層加熱硬化。對於將加熱 硬化後的膜狀的接著劑層切斷成3S麵⑽麵尺寸的試 驗片，使用Rheometrics股份有限公司的黏彈性分析儀（商 品名：RSA-2 ’升溫速度·· 5t/min，頻率：i Hz，測定溢 49 201141980 度：-150°C〜300°C，模式：拉伸楔 熱硬化後的接著劑層的l5〇t及、f J。進行試驗，估算加 數。該些溫度下的彈性模數高 的錯存彈性模 合時的超音波效率高，另外 吏用極溥晶片的打線接 的晶片破_可能_；制打線接合時的衝擊所致 置的耐回焊性提高。科，可有祕所得半導體裝 201141980 冥66卜e 實例7 1 1 1 Ο 1-H o 1 1 1 1 1 Ο 〇 1 CN 〇 22.0 &lt; &lt; 1000 10.0 20.0 10.0 〇 實例6 1 1 Ο 1 o 1 1 1 1 o I 1 〇 1 d 22.0 660 &lt; &lt; 1000 25.0 35.0 25.0 210 CN 實例5 1 ο 1 1 o 1 1 1 1 1 Ο ο 1 1 &lt;N Ο ! 22.0 515 &lt; &lt; 1100 30.0 35.0 30.0 JO 實例4 〇 r«H 1 1 1 1 1 I o 〇 1 ο ο 1 1 &lt;Ν Ο 26.0 320 &lt; &lt; 2000 10.0 25.0 15.0 »〇 實例3 〇 1 1 1 1 1 〇 1 1 1 ο ο 1 〇 CN Ο 26.0 320 &lt; &lt; 1400 25.0 35.0 20.0 〇 實例2 100 1 1 1 1 ο 1 1 1 1 ο ο 1 〇 ο 26.0 320 C &lt; 1300 30.0 30.0 26.0 〇 (Ν 實例1 100 1 1 1 〇 1 1 1 1 1 ο ο 1 1 CN Ο 1 22.0 270 &lt; &lt; 1700 20.0 30.0 20.0 〇 CS PI-1 PI-2 PI-3 PVB-1 RE-810NM UG-4010 MEH-8010 N-730 DA-MGIC 0PE-2St Foret SCS j ΒΜΙ-1 ΒΜΙ-2 ESCN195 1 ΤΡΡΚ HP-P1 NMP 成膜性 低溫貼附性 120°C 150°C1小時硬化 180°C5小時硬化 吸濕後 150°c 260〇C (A) 熱塑性樹脂 (Bl) 反應性塑化劑 (B2) 具有苯乙烯基的化合物 (Β3) 具有順丁烯二醯亞胺基的化合物 (Β4) 環氧樹脂 *1 jj (C)填料 溶劑 流動量（μηι) 260°C剝離強度 (N/chip) 儲存彈性模數 (MPa) 201141980 JU366卜 εS 48 201141980 The hanging hand 32 was moved with G.5 mm/s in a line parallel to the main surface of the sample, and the push-pull box 31 was used to measure the peeling stress which the clerk received at this time as the peeling strength. The more excellent the SKI solderability is, the higher the height can be obtained. The higher the 檨, the higher the peeling degree is than the 150 C, and the lower the peeling degree is, the more the hardening property of the thermal history t is. The sample which was heated and pressure-bonded under the above conditions was heat-hardened in an oven at 18 ° C for 5 hours, and then placed in a hunger, 85% RH mixed temperature and constant humidity shot at 4 M. The method of the same as the above method (4) After the moisture absorption, the results shown in Tables 1 and 2 were clearly confirmed. The examples of the adhesive composition were excellent in low-temperature adhesion, and after heat hardening and suction. The peel strength at 260 ° C after wet is sufficiently high. [Measurement of Storage Elastic Modulus] After the varnish for forming a coating layer was applied onto the OPP substrate, it was placed in an oven at 80 C for 30 minutes, followed by 12 Torr. After heating under conditions of 3 minutes, the OPP material was peeled off to obtain a film-form adhesive layer. The resulting film is in the form of a film. Next, the adhesive layer was heat-hardened in an oven at 180 C for 5 hours in a frame between 2 &gt; A test piece in which a film-form adhesive layer after heat curing was cut into a 3S surface (10) surface size was used, and a viscoelastic analyzer of Rheometrics Co., Ltd. (trade name: RSA-2 'heating rate··5 t/min, Frequency: i Hz, measured overflow 49 201141980 Degree: -150 ° C ~ 300 ° C, mode: l5 〇 t and f J of the adhesive layer after the wedge wedge heat hardening. Experiment, estimate the addend. The high-elasticity modulus at high temperature has a high ultrasonic efficiency when the elastic modulus is high, and the wafer which is connected by the wire of the crucible is broken. _ Possible_; the reflow resistance due to the impact at the time of wire bonding Raise. Section, can have secret semiconductors installed 201141980 66 66 eb e Instance 7 1 1 1 Ο 1-H o 1 1 1 1 1 Ο 〇 1 CN 〇 22.0 &lt;&lt; 1000 10.0 20.0 10.0 〇 Example 6 1 1 Ο 1 o 1 1 1 1 o I 1 〇1 d 22.0 660 &lt;&lt; 1000 25.0 35.0 25.0 210 CN Example 5 1 ο 1 1 o 1 1 1 1 1 Ο ο 1 1 &lt;N Ο ! 22.0 515 &lt; &lt 1100 30.0 35.0 30.0 JO Example 4 〇r«H 1 1 1 1 1 I o 〇1 ο ο 1 1 &lt;Ν Ο 26.0 320 &lt;&lt; 2000 10.0 25.0 15.0 »〇实Example 3 〇1 1 1 1 1 〇1 1 1 ο ο 1 〇CN Ο 26.0 320 &lt;&lt; 1400 25.0 35.0 20.0 〇Example 2 100 1 1 1 1 ο 1 1 1 1 ο ο 1 〇ο 26.0 320 C &lt ; 1300 30.0 30.0 26.0 〇 (Ν Example 1 100 1 1 1 〇 1 1 1 1 1 ο ο 1 1 CN Ο 1 22.0 270 &lt;&lt; 1700 20.0 30.0 20.0 〇CS PI-1 PI-2 PI-3 PVB- 1 RE-810NM UG-4010 MEH-8010 N-730 DA-MGIC 0PE-2St Foret SCS j ΒΜΙ-1 ΒΜΙ-2 ESCN195 1 ΤΡΡΚ HP-P1 NMP Film-forming low-temperature adhesion 120°C 150°C 1 hour hardening 180 ° C 5 hours hardening and moisture absorption 150 ° c 260 ° C (A) Thermoplastic resin (Bl) Reactive plasticizer (B2) Styrene-based compound (Β3) Compound with maleimide group (Β4) Epoxy resin*1 jj (C) Filler solvent flow (μηι) 260°C peel strength (N/chip) Storage elastic modulus (MPa) 201141980 JU366b ε

【(N^l——I 比較例6 1 1 1 〇 ο I 〇 〇 1 1 1 〇 22.0 270 U &lt; 2200 ο cn ο yrt Ο (Ν ci 0.05 比較例5 1 1 〇 1 ο 1 〇 1 〇 1 1 CN 〇 22.0 880 &lt; U 500 Ο vd ο Ο 〇6 cs 比較例4 I 〇 〇 1 1 ο Ο 1 1 〇 1 1 〇 22.0 880 &lt; U 400 19.0 22.0 18.0 沄 Ο 比較例3 〇 1 1 1 ο 1 1 〇 1 1 1 CN 〇 18.0 220 &lt; &lt; 2000 20.0 25.0 20.0 〇0 ν〇 比較例2 〇 1 1 1 1 1 〇 〇 1 〇 1 CN 〇 22.0 270 &lt; &lt; g 40.0 50.0 40.0 ο 比較例1 〇 1 1 1 1 1 1 1 1 〇 CN 〇 16.0 ON &lt; &lt; 200 ο q ο ΓΟ 卜 d ο PH PI-4 | PVB-2 ZX-1395 RE-810NM OPE-2St Foret SCS BMI-1 BMI-2 ESCN195 HP-850N TPPK HP-P1 1 成膜性 低温貼附性 120°C 150°C1小時硬化 180°C5小時硬化 吸濕後 150°C 260〇C (A) 熱塑性樹脂 (Β1)反應性塑化劑 (Β2) 具有苯乙烯基的化合物 (B3) 具有順丁烯二醯亞胺基的化合物 (B4) 環氧樹脂 環氧樹脂硬化劑 環氧樹脂硬化促進劑 (C)填料 溶劑 流動量（μπι) 260°C剝離強度 (N/chip) 儲存彈性模數 (MPa) 201141980 限定Ϊί 已啸佳實施_露如上，然其並非用以 =内，當可作些許之更動與潤飾，因此本;以 巴圍备視後附之申請專利範圍所界定者為準。 ’、 【圖式簡單說明】 圖1是表示接著片的一實施形態的示意剖面圖。 圖2是表示接著片的其他實施形態的示意剖面圖。 圖3是表示接著片的其他實施形態的示意剖面圖。[(N^l——I Comparative Example 6 1 1 1 〇ο I 〇〇1 1 1 〇22.0 270 U &lt; 2200 ο cn ο yrt Ο (Ν ci 0.05 Comparative Example 5 1 1 〇1 ο 1 〇1 〇 1 1 CN 〇 22.0 880 &lt; U 500 Ο vd ο Ο 〇 6 cs Comparative Example 4 I 〇〇 1 1 ο Ο 1 1 〇 1 1 〇 22.0 880 &lt; U 400 19.0 22.0 18.0 沄Ο Comparative Example 3 〇 1 1 1 ο 1 1 〇1 1 1 CN 〇18.0 220 &lt;&lt; 2000 20.0 25.0 20.0 〇0 ν〇Comparative Example 2 〇1 1 1 1 1 〇〇1 〇1 CN 〇22.0 270 &lt;&lt; g 40.0 50.0 40.0 ο Comparative Example 1 〇1 1 1 1 1 1 1 1 〇CN 〇16.0 ON &lt;&lt; 200 ο q ο ΓΟ 卜 d ο PH PI-4 | PVB-2 ZX-1395 RE-810NM OPE-2St Foret SCS BMI -1 BMI-2 ESCN195 HP-850N TPPK HP-P1 1 Film-forming low temperature adhesion 120°C 150°C 1 hour hardening 180°C 5 hours hardening after moisture absorption 150°C 260〇C (A) Thermoplastic resin (Β1 Reactive plasticizer (Β2) compound having a styryl group (B3) compound having a maleimide group (B4) epoxy resin epoxy resin hardener epoxy resin hardening accelerator (C) filler Solvent flow (μπι) 260 °C stripping Degree (N/chip) Storage elastic modulus (MPa) 201141980 Ϊ 已 已 佳 佳 实施 实施 露 如上 如上 如上 露 露 露 露 露 露 露 露 露 露 露 露 露 露 露 露 露 露 露 露 露 露 露 露 露 露 露 露 露 露 露 露 露 露 露 露 露BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing an embodiment of an adhesive sheet. Fig. 2 is a schematic cross-sectional view showing another embodiment of the adhesive sheet. 3 is a schematic cross-sectional view showing another embodiment of the succeeding film.

圖4是表示具備切晶片的接著片的一實施形態的示专 剖面圖。 I 圖5是表示具備切晶片的接著片的其他實施形態的示 意剖面圖。 圖6是表示半導體裝置的一實施形態的示意剖面圖。 圖7是表示半導體裝置的其他實施形態的示意剖面 圖8是表示接著力評價裝置的概略圖。 【主要元件符號說明】 1 接著劑層 2 支持膜 3 保護膜 5 切晶片 6 黏著劑層 7 基材膜 8 黏晶層 53 201141980 9、9a、9b :半導體元件 10 :支持構件 11 :接線 12 :密封材 13 :端子 31 :推拉盒 32 :掛手 33 :支點 35 : 42合金引線框 36 :熱盤 100、110、120、130、140 :接著片 200、210 :半導體裝置 300 :接著力評價裝置Fig. 4 is a cross-sectional view showing an embodiment of a bonding sheet including a wafer. Fig. 5 is a schematic cross-sectional view showing another embodiment of a sheet having a wafer cut. Fig. 6 is a schematic cross-sectional view showing an embodiment of a semiconductor device. Fig. 7 is a schematic cross-sectional view showing another embodiment of the semiconductor device. Fig. 8 is a schematic view showing an adhesion force evaluating device. [Main component symbol description] 1 Adhesive layer 2 Support film 3 Protective film 5 Cut wafer 6 Adhesive layer 7 Substrate film 8 Adhesive layer 53 201141980 9, 9a, 9b: Semiconductor component 10: Support member 11: Wiring 12: Sealing material 13: terminal 31: push-pull box 32: hanging hand 33: fulcrum 35: 42 alloy lead frame 36: hot plate 100, 110, 120, 130, 140: adhesive sheet 200, 210: semiconductor device 300: adhesion evaluation device

S 54S 54

Claims (1)

201141980 七、申請專利範園： 1· 一種接著劑組成物，包括： ⑷熱塑性樹脂，其重量平均分子量為10000〜 150000 ’且以樹脂成分成為25質量％的方式溶解於 基-2-鱗烧咐時的坑下的黏度為5泊〜期泊；以及 (B)熱硬化性成分，並且 上述（B)熱硬化性成分包含（B1)具有烯丙基或環 氧基的反應性㈣劑、（B2)具有苯乙縣的化合物、及 (B3)具有順丁烯二醯亞胺基的化合物。 2. 如申請專利範圍第1項所述之接著劑組成物，其中 上述（B1)具有烯丙基或環氧基的反應性塑化劑包含二烯 丙基雙酚A二縮水甘油醚、或稀丙基化雙酚A與表氣醇的 縮聚物。 3. 如申請專利範圍第丨項所述之接著劑組成物，其中 上述（B1)具有烯丙基或環氧基的反應性塑化劑包含含有 環氧基的液狀丙埽酸系聚合物。 4. 如申請專利範圍第1項所述之接著劑組成物，其中 上述（B2)具有苯乙烯基的化合物包含於側鏈上具有苯乙 稀基的丙稀酸糸聚合物。 5. 如申請專利範圍第1項至第4項中任一項所述之接 著劑組成物，其中上述（B)熱硬化性成分更含有（B4) 於25°C、1 atm下為固體狀的環氧樹脂。 6·如申睛專利範圍第1項至第$項中任一項所述之接 著劑組成物，其中上述（A)熱塑性樹脂的玻璃轉移溫度 55 201141980 為100°C以下。 ^ 7·如申請專利範圍第1項至第6項中任一項所述之接 著劑組成物’其中上述（Α)熱塑性樹脂為聚醯亞胺樹脂。 ^ 8.如申凊專利範圍第1項至第7項中任一項所述之接 著劑組成物，其中更包含（C)填料。 —9.如申請專利範圍第1項至第8項中任一項所述之接 著劑組成物，其為半導體元件固定用。 10.種接著片，具備將如申請專利範圍第1項至第 8項中任—項所述之接著劑組成物成形為膜狀的接著劑 層0 11·如申請專利範圍第10項所述之接著片，更具備支 持膜，且於該支持膜上設有上述接著劑層。 12. 如申請專利範圍帛1〇項所述之接著片，更具備切 晶片，且於該切晶片上設有上述接著劑層。 13. 如申請專利範圍第12項所述之接著片其中上 切晶片具有基賴及設置於該基材膜上的黏 該黏著劑層上設置有上述接著劑層。 θ 、 14. -種半導體裝置，具備—個或兩個以上 元件以及支持構件，並且 上述半導體元件與上述支持構件、及/或上述 件彼此是藉由如申請專利範圍第i項至第8項 馆 述之接著劑組成物而接著。 、 項所 56201141980 VII. Application for Patent Park: 1. An adhesive composition comprising: (4) a thermoplastic resin having a weight average molecular weight of 10,000 to 150,000" and dissolved in a base-2-scale burning method in such a manner that the resin component is 25% by mass. The viscosity under the pit is 5 poises to berth; and (B) the thermosetting component, and the (B) thermosetting component contains (B1) a reactive (tetra) agent having an allyl group or an epoxy group, ( B2) A compound having a phenylene group and (B3) a compound having a maleimide group. 2. The adhesive composition according to claim 1, wherein the (B1) reactive plasticizer having an allyl group or an epoxy group comprises diallyl bisphenol A diglycidyl ether, or A polycondensate of dipropylated bisphenol A and a surface alcohol. 3. The adhesive composition according to claim 2, wherein the (B1) reactive plasticizer having an allyl group or an epoxy group comprises a liquid propionic acid polymer containing an epoxy group. . 4. The adhesive composition according to claim 1, wherein the (B2) compound having a styryl group comprises a bismuth acrylate polymer having a styrene group in a side chain. 5. The adhesive composition according to any one of claims 1 to 4, wherein the (B) thermosetting component further contains (B4) a solid at 25 ° C and 1 atm Epoxy resin. The adhesive composition according to any one of the preceding claims, wherein the (A) thermoplastic resin has a glass transition temperature of 55 201141980 of 100 ° C or less. The adhesive composition according to any one of claims 1 to 6, wherein the above (Α) thermoplastic resin is a polyimide resin. The adhesive composition according to any one of claims 1 to 7, which further comprises (C) a filler. The adhesive composition according to any one of claims 1 to 8, which is for fixing a semiconductor element. 10. An adhesive sheet comprising an adhesive layer formed into a film form as described in any one of claims 1 to 8 above, wherein the adhesive layer is as described in claim 10 The adhesive sheet further includes a support film, and the adhesive layer is provided on the support film. 12. The wafer according to claim 1, further comprising a dicing wafer, wherein the dicing layer is provided on the dicing wafer. 13. The adhesive sheet of claim 12, wherein the upper wafer has a base layer and the adhesive layer disposed on the base film is provided with the adhesive layer. a semiconductor device having one or two or more elements and a supporting member, and the semiconductor element and the supporting member, and/or the above-mentioned members are mutually dependent on the items i to 8 of the patent application. The composition of the adhesive is described next. , item 56
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Family Cites Families (9)

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Publication number Priority date Publication date Assignee Title
JP3231420B2 (en) * 1991-10-21 2001-11-19 株式会社日本触媒 Electrorheological fluid
KR20080087046A (en) * 2000-02-15 2008-09-29 히다치 가세고교 가부시끼가이샤 Adhesive composition, process for producing the same, adhesive film made with the same, substrate for semiconductor mounting, and semiconductor device
JP3944430B2 (en) * 2002-08-26 2007-07-11 株式会社日立製作所 Heat resistant porous resin multilayer substrate
JP2004168848A (en) * 2002-11-19 2004-06-17 Gun Ei Chem Ind Co Ltd Epoxy resin composition
JP2005075866A (en) * 2003-08-29 2005-03-24 Tomoegawa Paper Co Ltd Adhesive sheet for semiconductor device
JP2007262191A (en) * 2006-03-28 2007-10-11 Nippon Steel Chem Co Ltd Flame-retardant curable resin composition
US8373283B2 (en) * 2008-08-04 2013-02-12 Hitachi Chemical Company, Ltd. Adhesive composition, film-like adhesive, adhesive sheet and semiconductor device
JP5439841B2 (en) * 2009-02-16 2014-03-12 日立化成株式会社 Adhesive composition, adhesive sheet, and semiconductor device
JP2010229274A (en) * 2009-03-27 2010-10-14 Tomoegawa Paper Co Ltd Resin composition and adhesive for electronic part

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